WorldWideScience
1

Radiation hardening of semiconductor parts  

International Nuclear Information System (INIS)

This chapter is an overview of total-ionizing-dose and single-event hardening techniques and should be used as a guide to a range of research publications. It should be stressed that there is no clear and simple route to a radiation-tolerant silicon integrated circuit. What works for one fabrication process may not work for another, and there are many complex interactions within individual processes and designs. The authors have attempted to highlight the most important factors and those process changes which should bring improved hardness. The main point is that radiation-hardening as a procedure must be approached in a methodical fashion and with a good understanding of the response mechanisms involved.

2

Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC  

International Nuclear Information System (INIS)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

3

Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC  

British Library Electronic Table of Contents (United Kingdom)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

4

Conceptual design of a low-temperature radiation-hard tracker detector  

CERN Document Server

Silicon sensors have about ten times improved radiation hardness around 130 K temperature, compared with the state-of-art sensors close to room temperature. This is based on the Lazarus effect studied by the RD39 Collaboration of CERN. Other benefits of low temperatures will also be discussed. We shall describe the conceptual design of low-mass detector modules cooled using two-phase flow of argon in miniature cooling pipes integrated in the module structure between the sensors and the readout hybrid circuit. The main engineering features of the cooling system and mechanical support structures are discussed, as well as the benefits arising from the operation of the tracker under cryogenic vacuum. 4 Refs.

2003-01-01

6

Hard Corrosion and Radiation-Resistant Coatings  

International Science & Technology Center (ISTC)

Hard Nano-Strutural Coatings Resistant to the Extreme Conditions of Chemical, Abrasive and High Energy Media for Thermonuclear Power, Oil and Gas and Chemical Industries

7

Investigation of the local hardening effect produced by various low-Z materials in a Si/(Fe, Pb) electromagnetic calorimeter  

International Nuclear Information System (INIS)

The condition for obtaining a calorimetric response linear with energy for hadronic showers and an energy resolution that improves as the incident energy increases is the equalization of the electromagnetic (e) and the hadronic (#pi#) signal responses. This equalization is obtained by exploiting a local hardening effect realized through the insertion of low-Z thin plates between the high-Z absorbers and the active material in a hadronic calorimeter with silicon readout. This effect, which allows the reduction of the calorimeter response to the electromagnetic component of the incoming hadronic showers, has been investigated for different low-Z materials. The relevance of some aspects of this study to the radiation hardness of the calorimeters is also addressed. (orig.).

8

Beam-induced damage on diffractive hard X-ray optics  

UK PubMed Central (United Kingdom)

The issue of beam-induced damage on diffractive hard X-ray optics is addressed. For this purpose a systematic study on the radiation damage induced by a high-power X-ray beam is carried out in both...Full Text Available

2010-11-01

9

Equipment hardening and hardness assurance  

International Nuclear Information System (INIS)

The introduction of tolerance to radiation (''radiation-hardness'') into large electronic systems is one of the major tasks to which this Handbook will be put. The practices recommended here for inculcating radiation-tolerance in equipment require advanced physical modeling techniques, precise engineering procedures, and firm assurance procedures. The degree to which these procedures should be used in an equipment project can be measured by the severity of the raw radiation environment, the desired reliability of the system, and the requirement of that project for radiation-sensitive technologies. The balance of device/circuit design versus shielding will depend on whether the radiation is highly penetrating -- as in isotope handling or military environments -- or readily attenuated, as in space. In this chapter the authors have attempted to summarize the ...

10

Ceramic bearings for application to hard disc drives (HDD); HDD yo ceramic ball bearing  

Energy Technology Data Exchange (ETDEWEB)

Ceramic ball bearings of silicon nitride are used for hard disk drive (HDD) spindle motors, to increase seed, reliability and memory capacity of the HDDs. Silicon nitride ceramics have advantages of lightweight, high strength and hardness over the conventional steel for bearings, but is expensive. A new process of high cost performance has been developed for mass production of the small-size ceramic balls. The company plans to apply these bearings to higher devices, e.g., servers, for the time being, and to expand the applicable areas, e.g., common devices and other small-size motors. The ceramic bearings have been developed jointly with Koyo Seiko Co. Ltd. (translated by NEDO)

2000-03-01

11

Observed energy dependence of Fano factor in silicon at hard X-ray energies  

Energy Technology Data Exchange (ETDEWEB)

An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.

1999-03-01

12

Radiation hardening of smart electronics  

International Nuclear Information System (INIS)

Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to ...

13

PolyRAD Space Radiation Shield for Commercial-Off-The  

Science.gov (United States)

Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...

14

Investigation of the radiological safety concerns and medical history of the late Joseph T. Harding, former employee of the Paducah Gaseous Diffusion Plant  

Energy Technology Data Exchange (ETDEWEB)

An ex-employee's claims that inadequate enforcement of radiation safety regulations allowed excess radiation exposure thereby causing his deteriorating health was not substantiated by a thorough investigation.

1981-03-01

15

New Radiation Stable and Long-Lived Plastic Scintillators  

International Nuclear Information System (INIS)

A study of the influence of the concentration of secondary addition, high concentrations of primary dopant, diffusion enhancer and stabilizer on radiation hardness is presented. It is concluded that the diffusion enhancing technique is the most powerful method for improving radiation hardness. A new polystyrene scintillator which contains 2% pT, 0.02% POPOP, 20% diffusion enhancer and 0.02% stabilizer gave 91% of initial light output immediately after 3 Mrad irradiation in air. Data are presented that show that scintillator prepared from commercial polymer is more radiation-hard and has greater light output than scintillator prepared from monomer. It is assumed that this difference is due to different molecular weight distributions. Some protocols for acceleration of aging (yellowing and crazing) are presented. It is shown that one of the main reasons for aging of plastic ...

1993-11-15

16

Hardening process relating to the irradiation of active electronic components and large hardened components  

International Nuclear Information System (INIS)

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

1988-12-09

17

Laser-assisted solar cell metallization processing. Quarterly report No. 6, March 1-June 30, 1985  

Energy Technology Data Exchange (ETDEWEB)

A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.

1985-07-25

18

Theoretical considerations for SRAM total-dose hardening  

International Nuclear Information System (INIS)

The theoretical hardness against total dose of the six-transistor SRAM cell is investigated in detail. An explicit analytical expression of the maximum tolerable threshold voltage shift is derived for two cross-coupled inverters. A numerical method is used to explore the hardness of the read and write operations. Both N- and P-channel access transistors designs are considered and their respective advantages are compared. The study points out that the radiation hardness mainly relies on the technology. Results obtained with the very robust Gate-All-Around process are finally presented.

19

Generation of microwaves and hard X-rays in a flash X-ray tube  

Energy Technology Data Exchange (ETDEWEB)

High interelectrode voltage peaks have been observed simultaneously with the emission of hard X-ray bursts from a flash X-ray tube. The magnitude of the voltage peaks may exceed twice the initial charging voltage. It has also been observed that the discharge emits bursts of X-and P-band microwaves radiation which are coincident with the emission of the hard X-ray bursts. The results indicate that the microwaves and X-rays have a common origin in discharge plasma movements and an acceleration model for electrons in the plasma is presented as one possible explanation of the observed phenomena.

1982-01-01

20

Is cold better ? - exploring the feasibility of liquid-helium-cooled optics.  

Energy Technology Data Exchange (ETDEWEB)

Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

1999-09-30

21

Radiation effects on MOS devices and radiation-hard CMOS technologies  

International Nuclear Information System (INIS)

Total-dose irradiation seriously damages MOS devices and their circuit performance. Threshold voltage shifts, transconductance degradation and increase in off-state leakage current are generally observed for irradiated devices. These instabilities are essentially due to positive and/or negative charge trapping in SiO_2 and interface trap generation at the SiO_2/Si interface. Radiation hardening of CMOS VLSIs is to eliminate these trapping effects, and for this purpose, special considerations for fabrication processes and layout design are necessary. In this paper, basic mechanisms for radiation-induced charge trapping and related effects on MOS devices are reviewed. Also discussed are radiation-hardening technologies from both fabrication-process and layout-design viewpoints. Using these technologies, 1 #mu#m radiation-hard CMOS gate arrays have been successfully developed. Experimental data taken for ...

22

Theory of multifoil collision supercompression  

Energy Technology Data Exchange (ETDEWEB)

Investigations of superdense compression touch on such problems as ultrahigh-frequency oscillations of matter in the generation of gravitational waves, the powerful pumping of hard coherent radiation, and the laboratory simulation of stellar interiors. This paper reviews the theory of supercompression and discusses some experiments involving multifoil collision supercompression.

1980-01-01

23

Photoluminescence in large fluence radiation irradiated space silicon solar cells  

Energy Technology Data Exchange (ETDEWEB)

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

1997-03-01

24

Radiation hardening of optical fiber links by photobleaching with light of shorter wavelength  

International Nuclear Information System (INIS)

The influence of additionally injected short-wavelength photobleaching light on the radiation hardness of Ge-doped graded index fibers working at 1,300 nm wavelength is investigated. Predictions are complicated by the fact that more efficient shortwave bleaching light experiences higher radiation-induced loss. Promising results are found for low fiber temperatures (approx-lt -50 C) and bleaching light of about 835 nm wavelength.

1995-09-18

25

Near-Core and In-Core Neutron Radiation Monitors for Real Time Neutron Flux Monitoring and Reactor Power Level Measurements  

Energy Technology Data Exchange (ETDEWEB)

MPFDs are a new class of detectors that utilize properties from existing radiation detector designs. A majority of these characteristics come from fission chamber designs. These include radiation hardness, gamma-ray background insensitivity, and large signal output.

2006-06-12

26

Radiation hardness of plastic scintillating fiber  

International Nuclear Information System (INIS)

We report on measurements of radiation hardness of the plastic scintillating fiber SCSF-81. Fibers were irradiated with "6"0Co #gamma#-rays and fast neutrons up to 105 Gy and up to 5 x 1013 n/cm"2, respectively. Deterioration of the attenuation length of the scintillating fiber was studied. Some significant deterioration was observed at the integrated dose of about 1 x 103 Gy and at the integrated neutron flux (neutron fluence) of about 1 x 1012 n/cm"2 for #gamma#-ray and neutron irradiation, respectively. (author).

27

Radiation hardening of integrated circuits technologies  

International Nuclear Information System (INIS)

The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological radiation hardening and no more system hardening.

28

Sensitization and radiation hardening of the photostimulable X-ray storage phosphor CsBr:Eu2+  

British Library Electronic Table of Contents (United Kingdom)

The X-ray storage phosphor CsBr:Eu2+ in form of needle image plates is believed to be a promising alternative to the granular BaFBr:Eu2+ with regard to PSL yield and spatial resolution. Unfortunately, CsBr:Eu2+ exhibits poor radiation hardness, which is caused by a migration of europium ions initiated by naturally existing defect centers like (Eu2+-VCs)-centers and X-ray generated MEu-centers. It will be shown that the formation of (Eu2+-O2?)-dipoles at the expense of (Eu2+-VCs)-dipoles, incorporated by thermal annealing in O2-containing and humid atmosphere, does not improve the radiation stability. There is, however, a strong improvement in the radiation hardness by codoping of CsBr:Eu2+ with lithium ions, which is accompanied by a complete suppression of the previously observed MEu-cent...

2009-01-01

29

Estimation of X-rays dose in the crystals of final thickness  

International Nuclear Information System (INIS)

A calculation method of the X-ray radiation dose (energy of gamma- radiation remains in the range of energies where the mechanism of photoelectric absorption is the prevailing one) absorbed in the absorbers of final thickness is suggested. Calculations of resorption of secondary radiation (characteristic fluorescences) in the substance and kinetic energy of photoelectrons caused by this resorption (it would be enough to consider one or two hard series) are presented. Calculation of the spectrum of photoelectron energy yield in TeInSe_2 monocrystal for 0.1-0.5 A range of X-ray radiation is conducted by the developed methods.

30

Radiation-induced segregation in light-ion bombarded Ni-8% Si  

Energy Technology Data Exchange (ETDEWEB)

Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal ...

1986-01-01

31

Magnetic properties of Fe-Co-Mo-Cu-B nanocrystalline ribbons with stressing surfaces  

British Library Electronic Table of Contents (United Kingdom)

Magnetic properties of Fe-Co-Mo-Cu-B alloy system with Co up to 26at.% were investigated. After proper thermal treatment, the nanocrystalline grain remains tiny, the density hardly increases, but the room-temperature saturation attains 1.5T mainly due to a high enough Curie temperature. The generally observed slant hysteresis loops point to ribbon surfaces, which stress the ribbon interior and induce a specific magnetoelastic contribution to hard-ribbon-axis magnetic anisotropy even after vacuum annealing. The effect does not come from cobalt but rather from the lack of silicon. Partial removal of the surfaces resulted in a decrease of the loop tilt.

2011-01-01

32

A Versatile Evaporative Cooling System Designed for Use in an Elementary Particle Detector  

British Library Electronic Table of Contents (United Kingdom)

An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...

2007-01-01

34

Effect of radiation dose on the properties of natural rubber nanocomposite  

Energy Technology Data Exchange (ETDEWEB)

Effect of radiation dose and carbon nanotubes (CNT) on the mechanical properties of standard Malaysian rubber (SMR) was investigated in this study. SMR nanocomposites containing 1-7 phr CNT were prepared using the solvent casting method and the nanocomposites were radiated at doses of 50-200 kGy. The change in mechanical properties, especially, tensile strength (Ts), elongation at break (Eb), hardness and tensile modulus at 100% elongation (M{sub 100}) were studied as a function of radiation dose. The structure and morphology of reinforced natural rubber was investigated by FESEM, TEM and AFM in order to gain further evidence on the radiation-induced crosslinking. It was found that the Ts, M{sub 100} and the hardness of the SMR/CNT nanocomposites significantly increased with radiation dose; the elongation at break exhibited an increase up to ...

2010-12-15

35

Radiation hardening of a high voltage IC technology (BCDMOS)  

International Nuclear Information System (INIS)

A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.

1990-07-16

36

Effect of rapid thermal annealing on radiation hardening of MOS devices  

International Nuclear Information System (INIS)

The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected, data are in good agreement with a recently developed model of oxygen out-diffusion; (ii) the location across the wafer with a radial dependence, results could be related to stress induced by thermal gradient.

1995-07-17

37

Correlation between tensile property and micro-hardness in reduced activation ferritic/martensitic steel irradiated at 573 K  

International Nuclear Information System (INIS)

Full text of publication follows: Radiation hardening and embrittlement due to high-energy neutron radiation around 623 K are the important issues on reduced-activation ferritic/martensitic (RAF/M) steels. It is expected that the improvement of radiation hardening might be one of effective ways to control the mechanical properties of RAF/M after irradiation. It has been reported that the weld joint has less hardening than the base metal from the tensile test results of TIG weldments irradiated in HFIR. This report indicated that radiation hardening can be reduced by the optimization of heat treatment condition for F82H. The purposes of this study are to establish the condition of heat treatment for minimum of radiation hardening in F82H steel using Neutron/Ion-irradiation and to examine a correlation between tensile property and micro-hardness before/after ...

2007-12-10

38

Basic mechanisms of radiation effects in the natural space radiation environment  

Energy Technology Data Exchange (ETDEWEB)

Four general topics are covered in respect to the natural space radiation environment: (1) particles trapped by the earth`s magnetic field, (2) cosmic rays, (3) radiation environment inside a spacecraft, (4) laboratory radiation sources. The interaction of radiation with materials is described by ionization effects and displacement effects. Total-dose effects on MOS devices is discussed with respect to: measurement techniques, electron-hole yield, hole transport, oxide traps, interface traps, border traps, device properties, case studies and special concerns for commercial devices. Other device types considered for total-dose effects are SOI devices and nitrided oxide devices. Lastly, single event phenomena are discussed with respect to charge collection mechanisms and hard errors. (GHH)

1994-06-01

39

Radiation hardness of plastic scintillating fiber against fast neutron and #gamma#-ray irradiation  

International Nuclear Information System (INIS)

In future collider experiments, where a background radiation level is estimated to be very high, e.g. around 10"2 #approx# 10"5 Gy/yr and 10"1"1 #approx# 10"1"4 n/cm"2/yr at SSC, the detectors operating around the collision point in the experiments will encounter a considerable amount of radiation. Therefore, the detectors, especially the calorimeter, are required to be resistive against high radiation levels. From this point of view, it is of great importance to study the effects of radiation damage on the performance of the detectors. The authors report preliminary results of measurements of radiation hardness of the plastic scintillating fiber Kuraray SCSF-81 against irradiation with fast neutrons and "6"0Co #gamma#-rays in the region of the neutron fluence from 1 x 10"1"1 to 5 x 10"1"3 n/cm"2 and the integrated #gamma#-ray dose from 890 to 10"5 Gy, ...

1992-10-25

40

Influence of microstructural characteristics on the mechanical properties of silicon nitride with Al{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} as sintering aids  

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized by high aspect ...

2003-07-01

41

Aging and compatbility of TNF-doped mylar  

Energy Technology Data Exchange (ETDEWEB)

TNF-doped Mylar is a new radiation-hard dielectric that has recently been qualified as a viable substitute for Mylar in capacitors. The advantage of TNF-doped Mylar is that it satisfies both the nuclear safety and radiation hardness requirements of weapons. Mylar is not radiation-hard. Aging and compatibility studies were carried out to insure that (1) TNF does not diffuse from the film during fabrication of the capacitor or during storage; and (2) there are no compatibility problems with aluminum foil (the conductor) or Fluorinert (the secondary dielectric). Losses of TNF were barely detectable during the vacuum bakes used in fabricating capacitors or during accelerated aging tests carried out below T{sub g} (70C) over a two year period in air. In other accelerated tests, no compatibility problems were detected with aluminum or Fluorinert. TNF-doped Mylar is now being used in the MC-4109 capacitor that ...

1990-01-01

42

Observation of a surface peak in low energy implant depth profiles in silicon  

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

1984-03-01

43

Limitations of silicon devices for quantum computing  

Energy Technology Data Exchange (ETDEWEB)

There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

2004-04-28

44

Radiation Protection Aspects of the Linac Coherent Light Source Front End  

Energy Technology Data Exchange (ETDEWEB)

The Front End Enclosure (FEE) of the Linac Coherent Light Source (LCLS) is a shielding housing located between the electron dump area and the first experimental hutch. The upstream part of the FEE hosts the commissioning diagnostics for the FEL beam. In the downstream part of the FEE, two sets of grazing incidence mirror and several collimators are used to direct the beam to one of the experimental stations and reduce the bremsstrahlung background and the hard component of the spontaneous radiation spectrum. This paper addresses the beam loss assumptions and radiation sources entering the FEE used for the design of the FEE shielding using the Monte-Carlo code FLUKA. The beam containment system prevents abnormal levels of radiations inside the FEE and ensures that the beam remains in its intended path is also described.

2010-08-26

45

Development and cytotoxicity evaluation of SiAlONs ceramics  

International Nuclear Information System (INIS)

SiAlONs are ceramics with high potential as biomaterials due to their chemical stability, associated with suitable mechanical properties, such as high fracture toughness and fracture resistance. The objective of this work was to investigate the mechanical properties and the cytotoxicity of these ceramic materials. Three different compositions were prepared, using silicon nitride, aluminum nitride and a rare earth oxide mixture as starting powders, yielding Si_3N_4-SiAlON composites or pure SiAlON ceramics, after hot-pressing at 1750 deg. C, for 30 min. The sintered samples were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). Furthermore, hardness and fracture toughness were determined using the Vicker's indentation method. The biological compatibility was evaluated by in vitro cytotoxicity tests. Ceramic with elevated hardness, ranging between 17 and 21 GPa, and high fracture ...

2007-01-01

46

Synthesis and characterization of #beta#-SiAlON with a rare earth concentrate as sintering aid  

International Nuclear Information System (INIS)

Silicon nitride-based ceramics behavior is strongly influenced by microstructural parameters, which, in turn are determined by chosen densification method. Highly covalent Si-N bond hind are the silicon nitride densification. Therefore, metal oxides are used in order to get high density. However, such oxides must be carefully selected, because they affect the general macroscopic properties of sintered bodies. In the present work, the viability of rare earth concentrate use to produce #beta#--Si_6_-_xAl_xO_xN_8_-_x and its effect on mechanical properties of the sintering ceramics are studied. Additive composition, heating rate, soaking time and sintering temperature were took as variables. Hardness, fracture toughness, Young's modulus and flexural strength were investigated. Lattice parameter compositional dependence and secondary phases crystallized after past-sintering heat treatment were also determined. The results show ...

47

Fine-ceramic anitifriction bearings  

Energy Technology Data Exchange (ETDEWEB)

Ceramic antifriction bearings were introduced in excellent characterics and application. In main shaft use bearings of the machine tool, to be heightened in efficiency and accuracy by the heightening in speed, centrifugal load to the outer ring is not negligible to shorten the bearing in life. Also ball bearings with a contact angle are easily corroded by a very strong revolution slide due to the gyromoment. The use of such light weight material as silicon nitride's can design the lengthening in life. Also the utilization of high rigidity can prevent the inner ring from expanding by centrifugal force and enable the machining to be with a high accuracy. Ceramic rolling element is excellent also in backing resistant property and effective on the oily film cut. With heat resistant property, it maintains hardness even at high temperature. Such excellent characteristics being utilized, the fine ceramic antifriction bearing is used for the ...

1989-08-01

48

Performance of the transition radiation detector flown on the NMSU/WIZARD TS93 balloon-borne instrument  

Energy Technology Data Exchange (ETDEWEB)

It is built and tested a transition radiation detector (TRD) to discriminate positrons from protons in the balloon flight TS 93 experiment. It is presented the TRD performance using flight data obtaining a proton-positron rejection factor of the order of 10{sup -3}. During the 24 hour flight, the data in the momentum range 4-50 GeV/c are collected. Using the TRD together with the Silicon calorimeter, it is achieved an overall rejection factor of about 10{sup -5} of positron against the proton background over the entire momentum range.

1995-09-01

49

Wear and machining of engineering ceramics by abrasive waterjets  

Energy Technology Data Exchange (ETDEWEB)

The purpose of this investigation was to simulate a machining front from an abrasive waterjet and its movements in a ceramic material. Wear factors affecting the abrasive waterjet nozzle were also to be established. Therefore, a low inclination angle (9[degree]) was used between the nozzle and test sample, simulating a moving machine front. A standard nozzle with an inner diameter of 0.76 mm was used in the test, and it was placed close to the samples. The outer diameter of the abrasive nozzle was 9.5 mm. The high wear rate from abrasive waterjets makes it possible to machine hard ceramics-including dense alumina, titanium boride, silicon nitride, and composites-at high machining speeds.

1993-08-01

50

Wood-plastic composites using woods native to Iran  

International Nuclear Information System (INIS)

Radiation induced polymerization of methylmethacrylate and copolymerization of styrene-acrylonitrile mixture in mamrase Carpinus betulus was carried out by means of #gamma#-ray, under different moisture levels and additives. Under all conditions the degree of polymerization was as high as 60%. No pronounced differences were observed in the kinetics of the polymerization of MMA either with moisture content of wood nor with kind and amount of additives. At high moisture (80% RH) content the dimensional stability of wood-PMMA was increased four fold as compared with untreated wood. The hardness increased about 100% for a weight conversion of monomer of about 30 to 40%. Hardness of this wood-polymer composite is comparable to that of the best noble woods in the world. (author).

1978-10-26

51

Preparation of polyester/gypsum/composite using gamma radiation, and its radiation stability  

Energy Technology Data Exchange (ETDEWEB)

Composites based on pure gypsum and polyester-styrene resin have been prepared using various doses of gamma radiation. Some physical properties of the prepared composites and the influence of irradiation dose on it have been studied as: compression strength, hardness, thermal decomposition temperature in nitrogen or oxygen, and the change in weight in aqueous solutions with different pH values. The glass transition temperature of the pure polymer and the composites increases with increasing the irradiation dose up to a plateau, and the glass transition temperature of the pure polymer is lower than that of the composites. The irradiation dose does not seem to affect the decomposition temperature of the pure polymer or the composites significantly and the decomposition temperature in presence of nitrogen is higher than that in presence of oxygen. Increasing the irradiation dose leads to an enhancement of the compression strength of the pure ...

2005-06-01

52

Radiation processed composite materials of wood and elastic polyester resins  

International Nuclear Information System (INIS)

The radiation polymerization of multifunctional unsaturated polyester-monomer mixtures in wood forms interpenetrating network system. The mechanical resistance (compression, abrasion, hardness, etc.) of these composite materials are generally well over the original wood, however the impact strength is almost the same or even reduced, in comparison to the wood itself. An attempt is made using elastic polyester resins to produced wood-polyester composite materials with improved modulus of elasticity and impact properties. For the impregnation of European beech wood two types of elastic unsaturated polyester resins were used. The exothermic effect of radiation copolymerization of these resins in wood has been measured and the dose rate effects as well as hardening dose was determined. Felxural strength and impact properties were examined. Elastic unsaturated polyester resins improved the impact strength of wood composite ...

1982-09-19

53

Detection of irradiated chicken by ESR spectroscopy of bone  

Energy Technology Data Exchange (ETDEWEB)

Ionizing radiation has been used to treat poultry to remove harmful microorganisms, mainly Salmonella, which contaminates chicken, goose and other fresh and frozen poultry. This microorganism is sensitive to low dose radiation. Thus, irradiating these foods with doses between 1 to 7 kGy results in a large reduction of bacteria. Since it is necessary to determine whether irradiation has occurred and to what extend, this work studied the signal produced by ionizing radiation within the hard crystalline matrix of chicken`s bone to establish a control method. Chicken`s drumsticks were irradiated and bones separated from flesh were lyophilized and milled. ESR spectrum was then obtained. The ESR signal increased linearly with dose over the range 0.25 to 8.0 kGy. Free radicals evaluated during 30 days after irradiation showed stable in this period. (Author).

1995-10-01

54

Environmental hardening of a mobile-manipulator system for nuclear environments  

International Nuclear Information System (INIS)

This research report discusses the radiation hardening of a commercially available mobile robot, the REMOTEC ANDROS. This hardening effort is culminating in the availability of a megarad hardened mobile platform to access areas in nuclear facilities with extremely high levels of radiation (0.1 to 1 Mrad). These radiation levels may be encountered both during routine repair and monitoring activities and accident situations. The project has completed a phase-I U.S. Department of Energy Small Business Innovative Research contract and is now in a phase-II effort with completion scheduled in early 1995. The research involves the evaluation of the material and electrical components of an ANDROS robot to determine the anticipated radiation hardness of the current production version and evaluation of the components that must be replaced or modified to harden the system to higher ...

1993-11-14

55

The effects of cosmic radiation on implantable medical devices  

Energy Technology Data Exchange (ETDEWEB)

Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset ...

1996-12-31

56

The PAMELA space experiment: first year of operation  

Energy Technology Data Exchange (ETDEWEB)

On the 15th of June 2006 the PAMELA experiment, mounted on the Resurs DK1 satellite, was launched from the Baikonur cosmodrome and it has been collecting data since July 2006. PAMELA is a satellite-borne apparatus designed to study charged particles in the cosmic radiation, to investigate the nature of dark matter, measuring the cosmic-ray antiproton and positron spectra over the largest energy range ever achieved, and to search for antinuclei with unprecedented sensitivity. The apparatus comprises a time-of-flight system, a silicon-microstrip magnetic spectrometer, a silicon-tungsten electromagnetic calorimeter, an anticoincidence system, a shower tail catcher scintillator and a neutron detector. The combination of these devices allows charged particle identification over a wide energy range.

2008-05-15

57

Depth-profiling of vertical sidewall nanolayers on structured wafers by grazing incidence X-ray flourescence  

British Library Electronic Table of Contents (United Kingdom)

The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200?mm and 300?mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of ...

2008-01-01

58

A phenomenological model for the macroscopic characteristics of irradiated silicon  

International Nuclear Information System (INIS)

The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.

59

Surface segregation and radiation hardening of 16Cr12MoWSiVNbB steel after irradiation with Ni++ and He+ ions  

British Library Electronic Table of Contents (United Kingdom)

Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.

2011-01-01

60

Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications  

CERN Document Server

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. ...

2001-01-01

61

Irradiation effects on the electrochemistry and corrosion resistance of stainless steel  

International Nuclear Information System (INIS)

Nickel ion radiation at 500 C was shown to have a strong effect on the surface electrochemistry and intergranular corrosion (IGC) of stainless steel (SS). Measured current densities in a 1 N sulfuric acid solution at room temperature were increased at active-passive, passive, and transpassive potentials. Radiation effects on the current decay behavior and susecptibility to IGC were similar for a fine-grained (FG) S alloy and for a very large-grained (LG) SS. Radiation-induced segregation (RIS) at the surface was believed to promote higher currents at short times, whereas segregation at grain boundaries was responsible for IG attack. Analytical electron microscopy (AEM) measurements revealed chromium and iron depletion plus Ni and silicon enrichment at grain boundaries in irradiated specimens. Si enhanced dissolution at transpassive potentials, whereas Cr depletion did the same at active-passive and ...

1995-01-01

62

Process model for carbothermic production of silicon metal  

Energy Technology Data Exchange (ETDEWEB)

This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid ...

1995-09-12

63

Reactive magnetron sputtering of hard Si-B-C-N films with a high-temperature oxidation resistance  

International Nuclear Information System (INIS)

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. The energy and flux of ions bombarding the growing films were ...

2005-11-01

64

Production of wood plastic properties using gamma radiation as a polimerization agent  

International Nuclear Information System (INIS)

The properties of wood plastic composites (WPC) based on Pinus Radiata D. Don impregnated with methylmethacrylate and subsequently polymerized with gamma radiation were studied. Different systems of impregnation were utilized, in order to obtain partial and shell loads. The minimum irradiation dose uses was 16 kGy. The following tests were made to the material: static bending, compression strenght parallel to grain, hardness, sheer strength, toughness, water absorption, dimensional stability and flame propagation index. To evaluate the testing, the results of the samples were separated according final density in the ranges: R_1 = 429-483 kg/m3 (without treatment); R_2 = 500-650 kg/m3 and R3 = 651-850 kg/m3. In general, the best results were obtained for samples of high density. The most important results were achieved for dimensional stability, water absorption and hardness. (Author).

1984-01-01

65

Radiation-hardening of magnet coils  

International Nuclear Information System (INIS)

The first essential before embarking on the radiation-hardening of electrical insulation - mostly magnet coils - in any beam line application is to obtain a reliable estimate of the dose to the components. These are examples ( switchyards at SLAC and LAMPF) where the degree of hardness specified was much higher than was required. Although experience shows that the cost premium for substantial radiation - hardening is of the order of 10%, it has also become clear that well - designed beam line have negligible losses: hardening is required only in the vicinity of targets, collimators or other beam - intercepting devices. Where the beam is deliberately scraped, local shielding will minimize the associated radiation in the surroundings. Electron machines have their own special problems due to synchrotron radiation, so certainly coils and other electrical equipment should be kept away ...

1989-03-01

66

Wood-polymer composites obtained by gamma radiation  

International Nuclear Information System (INIS)

It has been prepared composites materials by means of monomer penetration in pores of wood samples and later curing by means of gamma irradiation. The studied species were Hura crepitans L. (catahua), Aniba puchury-minor (C. Martinez) (mohena amarilla), and Calycophyllum spruceanum (Benth.) (capirona). These new materials exhibit smaller water absorption and better mechanical properties in comparison with native wood. The test tubes of catahua treated with the styrene-polyester mixture absorb only up to 10% humidity compared to the native species whereas its hardness is increased in a 100%. (author).

2006-01-01

67

Neutron irradiation effect on mechanical properties of metals after preliminary hardening  

International Nuclear Information System (INIS)

Some results on mechanical property study of copper and titanium subjected to impact load and next to neutron irradiation are presented. It was shown that shock wave influence involves a substantial shape change of the stress-strain diagram and of respective mechanical characteristics. Yield- and ultimate strength were substantially increased, as well as hardness with a considerable drop of plasticity. Also a heat stability of copper and titanium specimens was studied after being treated with shock-waves and neutron radiation. Results are given of electron microscope study of titanium structure sfter explosion hardening, which caused decomposition of hydride segregations in titanium and increased dislocation density.

68

Triple ion-beam studies of radiation damage effects in a 316LN austenitic alloy for a high power spallation neutron source  

Energy Technology Data Exchange (ETDEWEB)

Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. Variations in microstructure and hardness of irradiated specimens were studied using transmission electron microscopy (TEM) and a ...

1997-09-01

69

Effects of stress on radiation hardening and microstructural evolution in A533B steel  

British Library Electronic Table of Contents (United Kingdom)

Bent specimens of A533B steel (0.16wt% Cu) were irradiated at 290degreeC to 1dpa with 6.4MeV Fe3+ ions. Calculated tensile stresses at the irradiated surface were set to 0, 250, 500 and 750MPa. The specimens were subjected to hardness measurements, transmission electron microscopy (TEM) observations and three-dimensional atom probe (3DAP) analysis. The radiation-induced hardening decreased with increasing stress to 500MPa which was near the yield strength. TEM and 3DAP results showed that well-defined dislocation loops and solute clusters were formed. The diameter of dislocation loops increased and the number density decreased when the stress was applied, whereas the diameter and number density of solute clusters decreased. The hardening was mainly attributed to solute cluster formation. A...

2010-01-01

70

Design concept for radiation hardening of low power and low voltage dynamic memories  

International Nuclear Information System (INIS)

A radiation hard low power, low voltage dynamic memory is obtained by the use of a dummy cell concept. Compared to conventional dummy cell concepts, this concept applies a fully sized dummy cell. By optimizing the dummy cell precharge voltage for 5 V and 3 V operation and the timing of the dummy word-line, the overall soft error rate (SER) of the chip is improved by 2 orders of magnitude. An additional improvement of 1 order of magnitude is possible for 3 V operation by adjusting substrate bias and cell plate voltage. The results are verified by an accelerated SER measurement with a radium 226 source and an additional field soft error study.

71

The application of platinum-silicide anode layer to decrease the static and turn-off losses in high-power P-i-N diode  

Energy Technology Data Exchange (ETDEWEB)

The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 deg. C was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches.

2003-06-02

72

A new type active personal dosemeter with a solid state detector  

International Nuclear Information System (INIS)

We have developed a new type personal dosemeter by using a B-10 doped silicon p-n junction detector with a polyethylene radiator and a polyethylene moderator. The purpose of this study was to develop a real time neutron dosemeter with a nearly flat response in the energy range from thermal to 15 MeV and low angular dependence to the incident neutron direction. The neutron response of the dosemeter was obtained with the Monte Carlo calculation and the monoenergetic neutron experiment in a free air field and also under a condition attached on a phantom.

1988-04-01

74

Development of a portable thermophotovoltaic power generator  

Energy Technology Data Exchange (ETDEWEB)

A 150 Watt thermophotovoltaic (TPV) power generator is being developed. The technical approach taken in the design focused on optimizing the integrated performance of the primary subsystems in order to yield high energy conversion efficiency and cost effectiveness. An important aspect of the approach is the use of a selective emitter radiating to a bandgap matched photovoltaic array to minimize thermal and optical recuperation requirements, as well as the non-recoverable heat losses. For the initial prototype system, fibrous ytterbia emitters radiating in a band centered at 980 nm are matched with high efficiency silicon photoconverters. The integrated system includes a dielectric stack filter for optical energy recovery and a ceramic recuperator for thermal energy recovery. The system has been operated with air preheat temperatures up to 1350K. The design of the system and development status are presented. {copyright} ...

1997-03-01

75

Life evaluation of insulating materials for electric cable by accelerated thermal-radiation combined aging. 2  

International Nuclear Information System (INIS)

Radiation-and-thermal-combined degradation of some kinds of cable insulating and jacketing materials was evaluated by accelerated aging tests. Plasticized polyvinyl chloride (PVC), silicone rubber, crosslinked and non-crosslinked halogen-free flame-retardant polyolefins (NH-XLPO and NH-PO) and ethylene-propylene rubber (EP rubber) of experimental formulation were degraded at accelerated rates, that are 50-1000 times the degradation rate under standard conditions (e.g.; 1Gy/h, 50degC), and a method to assess the lifetime of these materials under standard conditions was studied. The degradation was investigated by measuring tensile properties. In the accelerated aging tests, rates of elongation decrease owing to degradation for these materials were in proportion to the increase in accelerated rate. The PVC lifetime estimated from sequential aging tests had a tendency to extend beyond that from simultaneous aging tests, while the lifetime of other ...

1994-01-01

76

Silicon solar cell assembly  

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

1979-01-01

77

Isolating the effect of radiation-induced segregation in irradiation-assisted stress corrosion cracking of austenitic stainless steels  

International Nuclear Information System (INIS)

Post-irradiation annealing was used to help identify the role of radiation-induced segregation (RIS) in irradiation-assisted stress corrosion cracking (IASCC) by preferentially removing dislocation loop damage from proton-irradiated austenitic stainless steels while leaving the RIS of major and minor alloying elements largely unchanged. The goal of this study is to better understand the underlying mechanisms of IASCC. Simulations of post-irradiation annealing of RIS and dislocation loop microstructure predicted that dislocation loops would be removed preferentially over RIS due to both thermodynamic and kinetic considerations. To verify the simulation predictions, a series of post-irradiation annealing experiments were performed. Both a high purity 304L (HP-304L) and a commercial purity 304 (CP-304) stainless steel alloy were irradiated with 3.2 MeV protons at 360 deg. C to doses of 1.0 and 2.5 dpa. Following irradiation, post-irradiation anneals were performed at ...

2002-04-01

78

Effects of the insertion of a thick sp"2 buffer layer on the adhesion of cBN-rich film  

International Nuclear Information System (INIS)

A method was proposed and examined to deposit thick cubic boron nitride (cBN)-rich layer of good adhesion to silicon substrate. The method combined (i) the insertion of a thick sp"2 buffer layer, and (ii) the use of an appropriate assist ion beam energy for the growth of the cBN-rich top layer. The sp"2-bonded boron nitride buffer layer was deposited under irradiation of ions with energies in the range of 200-360 eV. The buffer layer was found to contain curled graphitic basal planes, and so was supposed to be relatively deformable, and facilitate the relaxation of stresses in the cBN-rich top layer. The ion assist introduced during the growth of the cBN-rich layer was supposed to both create and annihilate defects, and so resulted in the generation and relaxation of internal stresses. Results showed that the insertion of a 492 nm sp"2 buffer layer, and the use of a beam energy of 450 eV for assisting the growth of the top layer can produce a 643-nm-thick cBN-rich ...

2004-05-01

79

Direct digital radiography versus storage phosphor radiography in the detection of wrist fractures  

Energy Technology Data Exchange (ETDEWEB)

AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the performance of caesium iodide/amorphous ...

2002-04-01

80

Direct digital radiography versus storage phosphor radiography in the detection of wrist fractures  

International Nuclear Information System (INIS)

AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the performance of caesium iodide/amorphous ...

2002-04-01

81

Depth-profiling of vertical sidewall nanolayers on structured wafers by grazing incidence X-ray flourescence  

Energy Technology Data Exchange (ETDEWEB)

The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200 mm and 300 mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the {mu}m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of the structures, they were provided with an additional silicon nitride layer. Four structure ...

2008-12-15

82

Depth-profiling of vertical sidewall nanolayers on structured wafers by grazing incidence X-ray flourescence  

International Nuclear Information System (INIS)

The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200 mm and 300 mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of the structures, they were provided with an additional silicon nitride layer. Four structure types of different bar ...

2008-12-01

83

Textured silicon nitride: processing and anisotropic properties  

International Nuclear Information System (INIS)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the ...

2008-07-01

84

Effects of mesh-assisted carbon plasma immersion ion implantation on the surface properties of insulating silicon carbide ceramics  

International Nuclear Information System (INIS)

Plasma immersion ion implantation (PIII) is an effective materials modification and synthesis technique but has seldom been applied to ceramic materials due to the high electrical resistance that reduces the ion bombardment energy and sometimes causes serious electrical arcing in the instrument. Even in cases where PIII is applicable, the surface properties of the implanted insulating materials can be seriously affected due to the low ion energy and materials damage from electrical arcing. In order to enhance the surface and mechanical properties such as wear resistance of ceramic materials used in many industrial applications, surface modification is needed. In this work, we conduct carbon implantation into sintered #alpha#-SiC (silicon carbides that are widely used in vacuum ceramic bearings) using mesh-assisted plasma immersion ion implantation to enhance the surface properties. The use of a conducting grid is necessitated by the high electrical resistance that ...

2004-03-01

85

Low-Cost Crystal Silicon  

International Science & Technology Center (ISTC)

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

86

XPS/AES Study of Electrical and Chemical Properties of Pd/SiC Interface  

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of diffusion and reaction ...

1997-11-01

87

High sensitivity detection and characterization of the chemical state of trace element contamination on silicon wafers  

CERN Document Server

Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO sub 2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection X-ray ...

2003-01-01

88

A new measurement of the antiproton-to-proton flux ratio up to 100 GeV in the cosmic radiation  

CERN Document Server

A new measurement of the cosmic ray antiproton-to-proton flux ratio between 1 and 100 GeV is presented. The results were obtained with the PAMELA experiment, which was launched into low-earth orbit on-board the Resurs-DK1 satellite on June 15th 2006. PAMELA is equipped with a silicon-microstrip magnetic spectrometer and a silicon-tungsten imaging calorimeter and has been collecting data since July 2006. During 500 days of data collection a total of about 1000 antiprotons have been identified, including 100 above an energy of 20 GeV. The high-energy results are a ten-fold improvement in statistics with respect to all previously published data. The antiproton-to-proton flux ratio increases smoothly with energy up to about 10 GeV, in agreement with previous experiments, and then levels off. The data follow the trend expected from secondary production calculations and significantly constrain contributions from exotic sources, e.g. dark matter ...

2008-01-01

89

The gamma radiation in improving the physical properties of wood-polymer composites  

International Nuclear Information System (INIS)

In the Peruvian natural forest there are several kind of woods, some of those are not of commercial interest, because have not resistance at termites and wet, are too soft, or can not be well finished, in the others. The present work is devoted to improvement of the physical properties of wood, such as hardness, traction, wet resistance, etc., by means of the generation of a composite wood-polymers cured by using gamma irradiation. The main objective is to establish the main parameters for the polymerization process (economic technical aspect) that decrease the amount of water absorption, in consequence the volumetric variation of Catahua, Mohena and Capirona woods. Gamma irradiation also provides good protection against the biological agents. In consequence, these woods increase its intrinsic and economic values. (author)

2006-07-01

90

Quartz fiber calorimetry and calorimeters  

CERN Document Server

Quartz fiber calorimetry is a technique the signal generation mechanism of which is based on the Cherenkov effect. In this article we try to give a comprehensive overview of the subject. We start with a general introduction to calorimetry where the basic elements that characterize the development of electromagnetic and hadronic showers are discussed. Then we describe in detail the operation principle and the properties of calorimeters equipped with quartz fibers. The main advantages of this type of calorimeters are the radiation hardness, the fast response and the compact detector dimensions, features that derive from the quartz material and the specific mechanism of operation. A section is devoted to presenting the quartz fiber calorimeters that have been built or planned to in various experiments to operate as centrality detectors, trigger detectors, luminosity monitors or general purpose very forward calorimeters.

2004-01-01

91

QCD corrections to top quark pair production in association with a photon at hadron colliders  

CERN Document Server

We compute QCD corrections to the production of a ttbar pair in association with a hard photon at the Tevatron and the LHC. This process allows a direct measurement of the top quark electromagnetic couplings that, at the moment, are only loosely constrained. We include top quark decays, treating them in the narrow width approximation, and retain spin correlations of final-state particles. Photon radiation off top quark decay products is included in our calculation and yields a significant contribution to the cross-section. We study next-to-leading order QCD corrections to the ppbar -> ttbar+gamma process at the Tevatron for the selection criteria used in a recent measurement by the CDF collaboration. We also discuss the impact of QCD corrections to the pp -> ttbar+gamma process on the measurement of the top quark electric charge at the 14 TeV LHC.

2011-01-01

92

Close binaries containing Supermassive Black Holes  

British Library Electronic Table of Contents (United Kingdom)

We consider the evolution of binary systems formed by a Supermassive Black Hole (SMBH) residing in the center of a galaxy or a globular cluster and a star in its immediate vicinity. The star is assumed to fill its Roche lobe, and the SMBH accretes primarily the matter of this star. The evolution of such a system is mainly determined by the same processes as for an ordinary binary. The main differences are that the donor star is irradiated by hard radiation emitted during accretion onto the SMBH; in a detached system, nearly all the donor wind is captured by the black hole, which strongly affects the evolution of the semi-major axis; it is not possible for companions of the most massive SMBHs to fill their Roche lobes, since the corresponding orbital separations are smaller than the radius ...

2010-01-01

93

Characterization and residual stress analysis of wear resistant Mo thermal spray-coated steel gear wheels  

British Library Electronic Table of Contents (United Kingdom)

The determination of residual stress (RS) in case-hardened steel gear truck synchronisers coated with thermal sprayed molybdenum was carried out using neutron and synchrotron X-ray diffraction. Two samples with different coating thicknesses (about 120 ?m and 1.4 mm) and different steel substrates (16MnCr5 and SAE4140, respectively) were investigated. Microanalysis revealed substantial porosity in both samples and some debonding was observed between the thin coating and the substrate. The bulk hardness of the SAE 4140 proved to be much higher than the 16MnCr5 and the surface case-hardening increased it by a further 20%. The full three-dimensional stress depth-profile was determined by neutron diffraction (ND) in both the coatings and the substrates, while synchrotron radiation allowed a dep...

2006-01-01

94

Effect of helium and hydrogen production on hardness of F82H steel irradiated by dual/triple ion beams  

International Nuclear Information System (INIS)

Effect of helium and hydrogen production on radiation-hardening of F82H irradiated by dual or triple beam condition were investigated. The specimens used were four types of ferritic martensitic steels of F82H-std (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) steels tempered at 750degC for 60 minutes, 20% cold worked F82H steel, F82H tempered for 10 minutes and non-tempered F82H steels. The irradiation was performed at 450degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The ratios of He (appm)/dpa and H(appm)/dpa were 15 nad 15 (or 150) for dual and triple ion beams. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. The hardness in these F82H steels irradiated at 450degC to 18 dpa under triple beam irradiation was harder than that under dual beam irradiation. Irradiation softening and hardening ...

2003-03-01

95

K-edge X-ray absorption spectra of argon in sputtered aluminum films  

International Nuclear Information System (INIS)

We have measured K-edge X-ray absorption spectra of argon in sputtered aluminum films at a synchrotron radiation facility (the Photon Factory). We found that the energy and shape of white line change when the film is annealed at 500 C and the spectrum becomes resembling that of argon implanted in silicon. From the analyses of the X-ray absorption spectra and TEM observation we concluded that argon exists as very small atom clusters with a diameter less than 1 nm or exist as isolated atoms in the as-sputtered aluminum film, and that the size of the clusters become as big as 10 nm diameter when the film is heated. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

1999-01-04

96

Diffusion examined by diffraction  

Science.gov (United States)

X-ray diffraction offers a unique combination of advantages for kinetic study which include the non-destructive nature of the measurement, the use of bulk crystals, and the convenience of the experimental arrangements. These attributes and the availability of position-sensitive detectors and high-flux synchrotron radiation sources make this technique most useful for in situ, dynamical investigations. When using diffraction techniques to determine a diffusion coefficient, the principle of analysis entails a scattering theory and a kinetic model. The former allows the kinetic parameter(s) to be extracted from measured intensity, while the latter relates the kinetic parameter(s) to the diffusion coefficient(s). Three examples are demonstrated: (1) Palladium Silicide (Pd{sub 2}Si) Layer Growth on Silicon, (2) Decomposition of an Ni-12.5at%Si Superalloy, and (3) Short-range Ordering in Cu-Au Solid Solutions.

97

Ar/sup +/ ion beam induced silicide formation mechanism at the Pf-Si interface  

Energy Technology Data Exchange (ETDEWEB)

Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.

1989-01-01

98

Nanofocusing refractive X-ray lenses  

Energy Technology Data Exchange (ETDEWEB)

This thesis is concerned with the optimization and development of the production of nanofocusing refractive X-ray lenses. These optics made of either silicon or diamond are well-suited for high resolution X-ray microscopy. The goal of this work is the design of a reproducible manufacturing process which allows the production of silicon lenses with high precision, high quality and high piece number. Furthermore a process for the production of diamond lenses is to be developed and established. In this work, the theoretical basics of X-rays and their interaction with matter are described. Especially, aspects of synchrotron radiation are emphasized. Important in X-ray microscopy are the different optics. The details, advantages and disadvantages, in particular those of refractive lenses are given. To achieve small X-ray beams well beyond the 100 nm range a small focal length is required. This is achieved in refractive lenses by ...

2010-02-05

99

Triple ion-beam studies of radiation damage in 9Cr2WVTa ferritic/martensitic steel  

Energy Technology Data Exchange (ETDEWEB)

To simulate radiation damage under a future Spallation Neutron Source (SNS) environment, irradiation experiments were conducted on a candidate 9Cr-2WVTa ferritic/martensitic steel using the Triple Ion Facility (TIF) at ORNL. Irradiation was conducted in single, dual, and triple ion beam modes using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} at 80, 200, and 350{degrees}C. These irradiations produced various defects comprising black dots, dislocation loops, line dislocations, and gas bubbles, which led to hardening. The largest increase in hardness, over 63 %, was observed after 50 dpa for triple beam irradiation conditions, revealing that both He and H are augmenting the hardening. Hardness increased less than 30 % after 30 dpa at 200{degrees}C by triple beams, compatible with neutron irradiation data from previous work which showed about a 30 % increase in yield strength after 27.2 dpa at 365{degrees}C. ...

1997-11-01

100

Study of proton therapy on malignant tumors. Effects in twenty-four hours after proton irradiation  

Energy Technology Data Exchange (ETDEWEB)

We irradiated proton beams on the ears of rabbits and the Harding-Passey mouse melanoma and observed their morphological change. We used 52 MeV proton beams from the INS-FM cyclotron. We adjusted the energy of the proton beams to be at the plateau part of the Bragg curve, at the half-way point of the Bragg peak, and at the Bragg peak. The amount of radiation was 5000rad in each case. The Harding-Passey mouse melanoma was transplanted into the subcutan of a three week old mouse. In this experiment, we used tumors, the diameter of which grew up to 1.5-2cm in 2-3 weeks after the transplantation. Using the jroscope, we observed both lightly and severely damaged cells. Using proton irradiation with the Bragg peak located at depth of 1mm in the rabbit's ears, we studied the change in the tissue. Irradiated epidermis fell off and was eroded because of radiation damage, but the rear surface of the ...

1983-01-01

101

FATIGUE OF BIOMATERIALS: HARD TISSUES  

UK PubMed Central (United Kingdom)

The fatigue and fracture behavior of hard tissues are topics of considerable interest today. This special group of organic materials comprises the highly mineralized and load-bearing tissues...Full Text Available

2010-09-01

102

The Silicone Conundrum Part II: ?Low Outgassing? Silicones  

British Library Electronic Table of Contents (United Kingdom)

Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.

2011-01-01

103

Silicon electrochemistry related to the formation of porous silicon  

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

1988-01-01

104

Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscattering  

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

105

Optically stimulated luminescence and thermoluminescence in CVD diamond and dosimetric evaluation in fields of ionizing radiation; Luminiscencia opticamente estimulada y termoluminiscencia en diamante DQV y evaluacion dosimetrica en campos de radiacion ionizante  

Energy Technology Data Exchange (ETDEWEB)

The optically stimulated luminescence (OSL) results a highly appropriate dosimetric technique for readings of absorbed radiation 'in alive' and 'in situ', as well as in real time. The CVD diamond on the other hand presents excellent qualities like radiation reader thanks to its reproducibility, radiation resistance, biocompatibility and non toxicity. The present work studies the answer of two diamond films pure and polluted with nitrogen (750 ppm) grown by the Chemical Vapor Deposition method (CVD) on silicon substrate (001) irradiated with beta (Sr-90) in the 0.833-100 Gy interval. The optical stimulation was carried out by 40 seconds with infrared laser (830 nm, 0.36 W/cm{sup 2}) and the filter BG-39 (300-600 nm) coupled the PM. The intensity and the decay of the hyperbolic type of the LOE curves were similar in both samples, for the non doped diamond were observed ...

2006-07-01

106

X-ray production with sub-picosecond laser pulses  

Energy Technology Data Exchange (ETDEWEB)

The interaction of intense, sub-picosecond laser pulses with solid targets produces intense picosecond x-ray pulses. With focused laser pulses of several 10 {sup 18} W/cm{sup 2}, He-like and H-like line radiation from targets such as aluminum and silicon has been produced. The energy conversion efficiency from the laser pulse energy to the 1--2 keV line x-rays is nearly one percent. The duration of the line x-ray radiation is of the order of ten picoseconds, although this may be an upper estimate because of the temporal resolution of the x-ray streak camera. The spatial extent of the x-ray source region is only slightly larger than the laser focal spot, or about 10 {mu}m in diameter. With these characteristics, such x-ray sources emit an intensity of nearly 10{sup 14} W/cm{sup 2}. Experiments and modeling which led to the above conclusions will be discussed.

1993-12-31

107

Low-temperature radiation controlled diffusion of palladium and platinum in silicon for advanced lifetime control  

International Nuclear Information System (INIS)

Radiation defects produced by helium implantation were used to shape profiles of palladium (Pd) and platinum (Pt) atoms in-diffusing (for 20 min at temperatures 600-800 deg. C) either from surface silicide (Pd_2Si, PtSi) or implanted layers. Results show that this procedure allows a strong localization of substitutional Pd and Pt at the depth where the damage produced by helium peaks. This results in local reduction of carrier lifetime by an almost ideal recombination centers - the acceptor level of substitutional Pd (E _c - 0.22 eV) or Pt (E _c - 0.23 eV). While optimum conditions for Pt in-diffusion are about 700 deg. C, Pd gives the best results already at lower temperatures (600 deg. C) where it also exhibits higher peak solubility. Both methods were used for optimization of turn-off properties of high power PiN diodes. The devices, where the lifetime was killed locally by Pd and Pt, exhibited similar trade-off between the static and dynamic parameters as the ...

2006-12-01

108

Radiation hardening technologies facing total dose, S.E.U. and S.E.L. in spatial environment  

International Nuclear Information System (INIS)

Space particles act on semiconductor devices by creating charges (electrons, holes) in the silicon and the silicon dioxide, and by creating displacement damage. These primary phenomena alter the electrical parameters of MOS and bipolar devices (threshold voltage V_t, mobility #mu#, conductivity #sigma#, current gain #beta#). The dose rate is not important in space (a few rad (Si)/h) but as the durations of space expeditions are on average from seven to twelve years, the total dose is an aggravating factor in the behaviour of the electrical parameters and also in device operation. The total dose effect from the beginning of charge creation (ionization) to the parameter shifts is reviewed. One can note that this effect is permanent because there will almost always be charge creation in space. Another important phenomenon is called the Single Event Upset (S.E.U.) and caused by the heavy ions and the protons which come from the galactic rays. The ...

109

Self-organization of nickel atoms in silicon  

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

2011-01-01

110

Measurement of the charge asymmetry in top-antitop quark production with the CDF II experiment  

Energy Technology Data Exchange (ETDEWEB)

The Fermi National Laboratory (Fermilab) operates the Tevatron proton-antiproton collider at a center-of-mass energy of {radical}s = 1.96 TeV, the is therefore the only collider which is today able to produce the heaviest known particle, the top quark. The top quark was discovered at the Tevatron by the CDF and D0 collaborations in 1995. At the Tevatron, most top quarks are produced via the strong interaction, whereby quark-antiquark annihilation dominates with 85%, and gluon fusion contributes with 15%. Considering next-to-leading order (NLO) contributions in the cross section of top-antitop quark production, leads to a slight positive asymmetry in the differential distribution of the production angle {alpha} of the top quarks. This asymmetry is due to the interference of certain NLO contributions. The charge asymmetry A in the cosine of {alpha} is predicted [14] to amount to 4-6%. Information about the partonic rest frame, necessary for a measurement of A in the observable cos ...

2006-12-01

114

Silicon MOS inductor  

Energy Technology Data Exchange (ETDEWEB)

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

1981-01-01

115

Selective radiochemical separation for indium determination at ppb levels in ion-implanted semiconductor-grade silicon  

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

1982-12-23

116

Mesoporous Silicon-Based Anodes for High Capacity, High - NASA  

Science.gov (United States)

Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...

117

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector  

CERN Document Server

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

1993-01-01

118

Deep donor states of muonium in silicon and germanium (status report exp SC81)  

CERN Document Server

Deep donor states of muonium in silicon and germanium (status report exp SC81)

1979-01-01

119

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer  

CERN Document Server

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

1991-01-01

120

X-ray dosimetry of TlGaSe_2 single crystals  

International Nuclear Information System (INIS)

TlGaSe_2 compound belongs to group of layered semiconductors of A"3B"3C_2"6-type. Photoelectric and optical properties of TlGaSe_2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe_2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe_2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K_#sigma# characterising X-ray ...

121

The tunneling universe in scalar-tensor theory with matter  

Energy Technology Data Exchange (ETDEWEB)

In this paper, the wavefunction of the universe with a tunneling boundary condition is considered in the context of the Brans-Dicke-type scalar-tensor theory with matter. The matter may be interpreted as a D-particle (or D0-brane) in string theory when the Brans-Dicke parameter {omega} is -1. We study two simple examples. The first example, the {gamma}=0 (matter) case, has a scale factor duality even if the low energy string action is coupled to matter. The universe undergoes quantum transition from super-inflationary (pre-big-bang) to deflationary (post-big-bang) phase. We calculate the transition rate by solving the Wheeler-DeWitt equation and find that it is non-vanishing. The two phases are disconnected classically. The second example is the {gamma}=1/3(radiation) case. With the help of earlier work this matter can be identified with a D0-brane in string theory. In this case, due to the absence of the scale factor duality and the complicated relations between ...

2007-10-21

122

Structural transformations in heat-resistant protective coatings on nickel alloys  

Energy Technology Data Exchange (ETDEWEB)

In this work a comprehensive metallophysical study was carried out for two aluminosilicide slip coatings of the systems Al-Si and Al-Nb-Si and an electron-beam Co-Cr-Al-Y coating on alloy EP-539 (17...19% Cr, 4...6% Co, 2.5...4% W, 4.5...6.5% Mo, 2...3% Ti, 3...4% Al, 1.4...2% Nb, balance Ni) after high-temperature testing. The protective properties of the coatings were evaluated from the results of laboratory tests for heat resistance at 1000/sup 0/C in the combustion products of diesel fuel with added sulfur at 970, 1000, and 1060/sup 0/C for 100 h and after full-scale tests for 150, 250, 400, and 700 h. Metallographic, hardness, x-ray, and micro x-ray studies of the coating were carried out. Layer-by-layer phase composition and the lattice spacing of the main phases were determined. X-ray analysis was carried out in an a DRON-1 diffractometer in copper K/sub ..-->../-radiation, and x-ray microanalysis was carried out in a MS-46 Cameca ...

1987-09-01

123

Physical properties of Ti/sub 50/Be/sub 40/Zr/sub 10/ glass  

Science.gov (United States)

Continuous metallic glass ribbons were produced by mejans of liquid-quenching at rates >10/sup 50/C/s. The ribbons, typically 30 ..mu..m thick and 1 to 2 mm wide, were determined to be glassy by X-ray diffraction (XRD) employing CuK..cap alpha.. and MoK..cap alpha.. radiation. Mechanical properties of the as-quenched product were determined by measurements of hardness, tensile strength and Young's modulus. The Vicker's diamond pyramid microhardness (H/sub V/) was measured on epoxy mounted samples using a Lietz Miniload instrument with a 100 g load. Tensile tests were conducted in an Instron machine using specimens which were hand-polished to produce smooth, parallel sides. Young's modulus (E) is given by the relationship rho V/sub E/sup 2//. V/sub E/, the velocity of extensional mode waves, was measured by the pulse-echo technique using a Panametrics Intervalometer and glass density, rho, was obtained by the liquid ...

1977-09-01

124

Hardness and defect structures in EC316LN austenitic alloy irradiated under a simulated spallation neutron source environment using triple ion-beams  

Energy Technology Data Exchange (ETDEWEB)

For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% ...

2000-04-01

125

Hardness and defect structures in EC316LN austenitic alloy irradiated under a simulated spallation neutron source environment using triple ion-beams  

International Nuclear Information System (INIS)

For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe"+, 360 keV He"+, and 180 keV H"+ simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% elongation) was maintained ...

2000-04-01

126

Hard x-ray phase imaging using simple propagation of a coherent synchrotron radiation beam  

International Nuclear Information System (INIS)

Particularly high coherence of the x-ray beam is associated, on the ID19 beamline at ESRF, with the small angular size of the source as seen from a point of the sample (0.1-1 #mu#rad). This feature makes the imaging of phase objects extremely simple, by using a 'propagation' technique. The physical principle involved is Fresnel diffraction. Phase imaging is being simultaneously developed as a technique and used as a tool to investigate light natural or artificial materials introducing phase variations across the transmitted x-ray beam. They include polymers, wood, crystals, alloys, composites or ceramics, exhibiting inclusions, holes, cracks, ... . 'Tomographic' three-dimensional reconstruction can be performed with a filtered back-projection algorithm either on the images processed as in attenuation tomography, or on the phase maps retrieved from the images with a reconstruction procedure similar to that used for electron microscopy. The combination of diffraction ('topography') and ...

1999-05-21

127

Fading of irradiated blue-colored pearls. [Gamma radiation  

Energy Technology Data Exchange (ETDEWEB)

The fading of irradiated and natural blue-colored pearls was investigated in this experiment. Thirty natural blue-colored pearls and sixty irradiated blue-colored pearls were used. Some of them were placed at a light position of RT. Another pearls were placed at a dark position of 50/sup 0/C. The irradiated pearls placed at a light position of RT didn't show remarkable fading in their color in 294 days. But the natural blue-colored pearls showed a little recovery from 4% to 8% in reflection factors in 223 days at RT. The irradiated pearls placed at a dark position of 50/sup 0/C showed the recovery from 9% to 14% in 264 days independently of irradiation times. The natural blue-colored pearls also showed the bleaching from 5% to 10% in reflection factor in 86 days at 50/sup 0/C. Both irradiated and natural blue-colored pearls hardly showed their remarkable changes in their chromaticities independently of temperatures.

1982-03-01

128

Disturbed tooth formation by /sup 60/Co-gamma-ray radiation  

Energy Technology Data Exchange (ETDEWEB)

The molar of guinea pigs was irradiated with /sup 60/Co-..gamma.. ray for daily observations of the manifestation of disturbed tooth formation by microradiography and the time registration by tetracycline-labelling. Irradiation first injured young blast cells of the dentin in the growth phase, dental pulp cells, and cells of the enamel. The portion composed of injured cells formed a depressed ''constriction'' from the dental pulp side toward the border between the enamel and dentin. The cells of the enamel injured by irradiation in the growth phase later formed a very thin irregular stroma. In contrast, cells in the differentiation or subsequent phase at the time of irradiation and cells probably having started to grow after irradiation proceeded with formation of a normal stroma and calcification. No uniform relation was obtained between the histological staining of the organic stroma of normal or abnormal dentin and calcification. Labelling with ...

1982-02-01

129

Effects of initial microstructure and helium production on radiation hardening in F82H Steels  

International Nuclear Information System (INIS)

Full text of publication follows: Fission neutron irradiation to steels doped with isotope boron-10 is frequently conducted to study effects of the helium production on mechanical properties. The intrinsic mechanical properties of F82H steels could have been changed due to the boron doping. Recently, we reported that co-doping with boron and nitrogen to F82H (F82H+B+N) improved the mechanical properties of F82H doped only with boron. The mechanical properties of F82H+B+N are successfully comparable with the non-doped F82H before irradiation. In order to evaluate the effects of initial microstructure and helium production on radiation hardening, F82H and F82H+B+N were irradiate d Specimens used in this study were standard F82H martensitic steels, F82H steels doped with 60 mass ppm 10B and 200 ppm N (F82H+10B+N) and F82H steels doped with 60 mass ppm 11B and 200 ppm N (F82H+11B+N). Initial microstructures were changed by tempering conditions, and the tempering ...

2007-12-10

130

Pitting corrosion resistance of silicon-implanted stainless steels  

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

135

Fouling Study of Silicon Oxide Pores Exposed to Tap Water  

Energy Technology Data Exchange (ETDEWEB)

We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

2007-07-12

138

Boron profiles in amorphous and crystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

1989-01-01

140

Advanced Ceramic Technology  

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

2007-02-01

141

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon  

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

2007-10-15

142

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon  

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

2007-10-01

143

Infrared spectroscopy analysis of MgO-doped silicon nitride  

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.

1997-12-31

144

Correlation between mechanical stress and hydrogen-related effects on radiation-induced damage in MOS structures  

Energy Technology Data Exchange (ETDEWEB)

Correlation between mechanical stress and hydrogen effects on radiation damage in polycide-gate MOS capacitors was investigated as a function of gate-oxide thickness. The compressive stress magnitude was altered by varying the silicide (TiSi/sub 2/ or WSi/sub 2/) thickness in the polycide-gate electrode, and hydrogen introduction into gate-SiO/sub 2/ film was carried out by diffusion from plasma-deposited silicon-nitride passivation film (SiN-Cap). In a MOS capacitor without passivation film (No-Cap sample), it was found that compressive stress on gate-SiO/sub 2/ reduces both positive charge build-up (..delta..Qot) and interface-trap generation (..delta..Dit). Radiation induced shift, ..delta..Qot exhibits a smaller stress effect as compared with ..delta..Dit. As gate-SiO/sub 2/ thickness decreases, the stress effect on ..delta..Qot increases, while this effect on ..delta..Dit remains nearly constant. This compressive ...

1987-12-01

145

The crystal structure of the novel ternary silicide Sm_4Pd_4Si_3  

International Nuclear Information System (INIS)

The crystal structure of the compound Sm_4Pd_4Si_3 was determined by the single-crystal method (KM-4 automatic diffractometer, Mo K#alpha# radiation). Sm_4Pd_4Si_3 has the monoclinic Nd_4Rh_4Ge_3 type structure: space group C2/c, mC44 (No. 15), a=20.693(6), b=5.584(1), c=7.699(2) A, #beta#=109.48(3) , V=838 A"3, Z=4, #mu#=36.23 mm"-"1, R_F=0.0537, R_W=0.0435 for 1652 unique reflections. The coordination numbers of samarium atoms are 17 and 18. For palladium and silicon atoms icosahedra and trigonal prisms with additional atoms are typical as coordination polyhedra. The structure of Sm_4Pd_4Si_3 is composed of fragments of the YPd_2Si and Y_3Rh_2Si_2 structure in a ratio 1:1. (orig.).

146

Structural transformations in Sc/Si multilayers irradiated by EUVlasers  

Energy Technology Data Exchange (ETDEWEB)

Multilayer mirrors for the extreme ultraviolet (EUV) are keyelements for numerous applications of coherent EUV sources such as newtabletop lasers and free-electron lasers. However the field ofapplications is limited by the radiation and thermal stability of themultilayers. Taking into account the growing power of EUV sources thestability of the optics becomes crucial. To overcome this problem it isnecessary to study the degradation of multilayers and try to increasetheir temporal and thermal stability. In this paper we report the resultsof detailed study of structural changes in Sc/Simultilayers when exposedto intense EUV laser pulses. Various types of surface damage such asmelting, boiling, shockwave creation and ablation were observed asirradiation fluencies increase. Cross-sectional TEM study revealed thatthe layer structure was completely destroyed in the upper part ofmultilayer, but still survived below. The layers adjacent tothe substrateremained intact even ...

2007-08-21

147

Displacement damage cross sections for neutron-irradiated silicon carbide  

International Nuclear Information System (INIS)

Displacements per atom (DPA) is a widely used damage unit for displacement damage in nuclear materials. Calculating the DPA for SiC irradiated in a particular facility requires a knowledge of the neutron spectrum as well as specific information about displacement damage in that material. In recent years significant improvements in displacement damage information for SiC have been generated, especially the energy required to displace an atom in an irradiation event and the models used to describe electronic and nuclear stopping. Using this information, numerical solutions for the displacement functions in SiC have been determined from coupled integro-differential equations for displacements in polyatomic materials and applied in calculations of spectral-averaged displacement cross sections for SiC. This procedure has been used to generate spectrally averaged displacement cross sections for SiC in a number of reactors used for radiation damage testing of fusion ...

2002-12-01

148

Displacement Damage Cross Sections for Neutron-irradiated Silicon Carbide  

Energy Technology Data Exchange (ETDEWEB)

Displacements per atom (DPA) is a widely used damage unit for displacement damage in nuclear materials. Calculating the DPA for SiC irradiated in a particular facility requires a knowledge of the neutron spectrum as well as specific information about displacement damage in that material. In recent years significant improvements in displacement damage information for SiC have been generated, especially the energy required to displace an atom in an irradiation event and the models used to describe electronic and nuclear stopping. Using this information, numerical solutions for the displacement functions in SiC have been determined from coupled integro-differential equations for displacements in polyatomic materials and applied in calculations of spectral-averaged displacement cross sections for SiC. This procedure has been used to generate spectrally averaged displacement cross sections for SiC in a number of reactors used for radiation damage testing of fusion ...

2002-12-01

149

Some comments on BEIR III  

International Nuclear Information System (INIS)

... organizations irradiation radiation doses radiation effects RADIATIONS.

1982-01-01

150

Radiation technology of wood-plastic composite materials  

International Nuclear Information System (INIS)

... radiation effects RADIATIONS. WOOD-PLASTIC COMPOSITES.

1981-10-02

151
152

Identification and expression of differentially expressed genes in the hard clam, Mercenaria mercenaria, in response to quahog parasite unknown (QPX)  

UK PubMed Central (United Kingdom)

BackgroundThe hard clam, Mercenaria mercenaria, has been affected by severe mortality episodes associated with the protistan parasite QPX (Quahog Parasite Unknown)...Full Text Available

153

Hardness, density, and shrinkage characteristics of silk-oak from ...  

Science.gov (United States)

Sep 1, 2011 ... Title: Hardness, density, and shrinkage characteristics of silk-oak from Hawaii. Author: Youngs, R. L.. Date: 1964. Source: Research note FPL ...

154

AC-130H Gunship Armor Upgrade Project  

Energy Technology Data Exchange (ETDEWEB)

This report covers the test methods and equipment for testing aircraft armor both hard and soft. The hard armor are the typical ceramic type while the soft armor are various types of layered composite materials. 10 figs. (JEF)

1990-09-19

155

Study of porous silicon morphologies for electron transport  

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

1993-05-17

156

Selective emitter using porous silicon for crystalline silicon solar cells  

Energy Technology Data Exchange (ETDEWEB)

This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...

2009-06-15

157
158

Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate  

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

2008-05-19

159

Application of neutron transmutation doping method to initially p-type silicon material  

Energy Technology Data Exchange (ETDEWEB)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...

2009-07-15

160

Application of neutron transmutation doping method to initially p-type silicon material  

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

2008-05-12

161

Annealing of silicon implanted with arsine and hydrogen ions  

Energy Technology Data Exchange (ETDEWEB)

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

2003-01-01

162

In situ texture analysis under applied load  

International Nuclear Information System (INIS)

The in-situ measurement of a crystallographic texture is a special type of a non-destructive measurement, which need special equipments. Due to the high photon flux and the excellent brilliance high energetic synchrotron radiations are a fantastic tool particular in fast experimentation. Moreover, a high penetration power allows the investigation of standard tensile sample of the DIN-norm. A loading device with a power up to 20 kN was installed at the hard wiggler beamline BW5 (HASYLAB-DESY) to perform in-situ strain and in-situ texture analysis. Using 100keV X-rays one gets short wavelength so that a 2D image-plate detector offers a wide range of diffraction pattern within the first 10 degree in 2 theta. Thermal neutron is another radiation with a high penetration power, which is the standard method for global texture analysis of bulk samples. As an example rectangular extruded Mg- Az31 was investigated by an in-situ. ...

163

A study of radiation embrittlement using simulation irradiation  

International Nuclear Information System (INIS)

Simulation irradiation experiments were carried out to investigate the formation processes and contribution to hardening of radiation-induced features in low alloy steels. Medium Cu (0.12 and 0.16%) and low Cu (0.03%) A533B steels were irradiated with 3 MeV Ni ions and 5 MeV electrons, and in KUR at 290degC. Irradiated steels were examined by three-dimensional atom probe, positron annihilation, high-resolution transmission electron microscopy and hardness measurements. Electron irradiation caused almost the same hardening as KUR irradiation in medium Cu steels under almost the same dose rate and dose conditions, whereas the formation of larger, denser and more Cu enriched clusters and smaller accumulation of single vacancies were confirmed for KUR irradiation. This indicated that cascade damage provides additional cluster nucleation sites to compensate for lower free point defect production. High dose rate Ni ion irradiation produced Mn-Ni-Si ...

2008-10-13

164

GRAIN REFINEMENT OF PERMANENT MOLD CAST COPPER BASE ALLOYS  

Energy Technology Data Exchange (ETDEWEB)

Grain refinement behavior of copper alloys cast in permanent molds was investigated. This is one of the least studied subjects in copper alloy castings. Grain refinement is not widely practiced for leaded copper alloys cast in sand molds. Aluminum bronzes and high strength yellow brasses, cast in sand and permanent molds, were usually fine grained due to the presence of more than 2% iron. Grain refinement of the most common permanent mold casting alloys, leaded yellow brass and its lead-free replacement EnviroBrass III, is not universally accepted due to the perceived problem of hard spots in finished castings and for the same reason these alloys contain very low amounts of iron. The yellow brasses and Cu-Si alloys are gaining popularity in North America due to their low lead content and amenability for permanent mold casting. These alloys are prone to hot tearing in permanent mold casting. Grain refinement is one of the solutions for reducing this problem. ...

2004-04-29

165

FIBROUS MONOLITH WEAR RESISTANT COMPONENTS FOR THE MINING INDUSTRY  

Energy Technology Data Exchange (ETDEWEB)

A set of materials property data for potential wear resistant materials was collected. These materials are designated for use as the ''core'' materials in the Fibrous Monolith structure. The material properties of hardness, toughness, thermal conductivity and cost were selected as determining factors for material choice. Data for these four properties were normalized, and weighting factors were assigned for each property to establish priority and evaluate the effects of priority fluctuation. Materials were then given a score based on the normalized parameters and weighting values. Using the initial estimates for parameter priority, the highest ranking material was tungsten carbide, with diamond as the second ranked material. Several materials were included in the trade study, and five were selected as promising ''core'' materials to include in this effort. These materials are tungsten carbide, ...

2001-08-15

166

Study on immobilizing radioactive slurry based on alkali-activated slag-clay minerals composite cement  

International Nuclear Information System (INIS)

The feasibility of immobilizing simulated radioactive slurry (SRS) by alkali-activated slag---clay minerals composite cement (AASCM) was studied under the experimental conditions. The results show that the dosage of SRS and water cement ratio (W/C) have significant effect on the flowability of the mixture of AASCM and SRS. The more dosage of SRS, the lower flowability. When cement/sand ratio is 1: 1 and W/C is 0.45, the flowability of the mixture meets the case of solidification engineering and the compressive strength of the waste forms containing 20% SRS meets the needs of GB 14569.1-93. The setting time of the mixture of AASCM and SRS is highly dependent on temperature while sorts of anions have little influence on it. The application of AASCM is suitable below 20 degree C. The leaching resistance of AASCM based waste forms is superior to that of OPC based waste forms. The control of the forms to Sr2+ is stronger than that to Cs+. Silicon fume can improve ...

2006-03-01

167

Structure and electronic studies of defects in amorphous silicon. Final report, March 1980-February 1981  

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and ...

1981-08-01

168

Wire chamber degradation at the Argonne ZGS  

International Nuclear Information System (INIS)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

1986-01-16

169

Wire chamber degradation at the Argonne ZGS  

Energy Technology Data Exchange (ETDEWEB)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

1986-01-01

170

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long  

CERN Multimedia

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

1999-01-01

171

Single Molecule Source Reagents for CVD of Beta Silicon Carbide.  

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

1991-01-01

172

Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures  

UK PubMed Central (United Kingdom)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

2008-01-01

173

Untitled - NASA Technical Report Server (NTRS)  

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

175

The crystalline-silicon photovoltaic R&D project at NREL and SNL  

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

1996-12-31

176

Strained silicon for quantum computing  

Energy Technology Data Exchange (ETDEWEB)

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

2002-03-07

177

Mechanical Properties of Microelectronics Thin Films: Silicon ...  

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

1989-10-01

179

Efficiency of silicon and GaAs concentrator solar cells operated inside integrating cavity receivers  

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

1991-06-01

180

CMS Silicon Strip Tracker Performance  

CERN Document Server

In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

2011-01-01

181

Abstracts by Mission Directorate - NASA  

Science.gov (United States)

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

182

ANALYSIS OF BENDING CREEP BEHAVIOR OF SILICON ...  

Science.gov (United States)

... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...

183

A Two-Step Etching Method to Fabricate Nanopores in Silicon  

CERN Document Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

2008-01-01

184

7 - NASA Technical Reports Server  

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

185

Silicon effect on corrosion resistance of austenite stainless steels in strongly oxidizing media containing fluoride and phosphate admixtures  

International Nuclear Information System (INIS)

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

186

Nonformity of the electron density in amorphous silicon films  

Energy Technology Data Exchange (ETDEWEB)

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

1985-12-01

187

Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon  

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

188

Method of mitigating titanium impurities effects in p-type silicon material for solar cells  

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

1980-05-01

189

Joined ceramic product  

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

2001-01-01

190

Electrochemical stability of silicon/carbon composite anode for lithium ion batteries  

International Nuclear Information System (INIS)

Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.

2007-04-20

191

Dielectric barrier discharge using corona-modified silicone rubber  

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

2008-10-01

192

Individual Radiation Protection Monitoring in the Marshall Islands: Rongelap Atoll (2002-2004)  

Energy Technology Data Exchange (ETDEWEB)

The United States Department of Energy (U.S. DOE) has recently implemented a series of strategic initiatives to address long-term radiological surveillance needs at former U.S. nuclear test sites in the Marshall Islands. The plan is to engage local atoll communities in developing shared responsibilities for implementing radiation protection monitoring programs for resettled and resettling populations in the northern Marshall Islands. Using the pooled resources of the U.S. DOE and local atoll governments, individual radiological surveillance programs have been developed in whole body counting and plutonium urinalysis in order to accurately assess radiation doses resulting from the ingestion and uptake of fallout radionuclides contained in locally grown foods. Permanent whole body counting facilities have been established at three separate locations in the Marshall Islands including Rongelap Atoll (Figure 1). These facilities are operated and ...

2006-01-17

193

The CDF intermediate silicon layers detector  

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

1999-11-01

194

Supercritical Fluid Immersion Deposition: A New Process for Selective Deposition of Metal Films on Silicon Substrates  

Energy Technology Data Exchange (ETDEWEB)

Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

2005-01-01

195

Application of neutron transmutation doping method to initially p-type silicon material  

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

2009-01-01

196

Depth profiling using C{sub 60} {sup +} SIMS-Deposition and topography development during bombardment of silicon  

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

2006-07-30

197

The Use of Medical Images in Planning and Delivery of Radiation Therapy  

UK PubMed Central (United Kingdom)

Abstract The authors provide a survey of how images are used in radiation therapy to improve the precision of radiation therapy plans, and delivery of radiation treatment. In contrast...Full Text Available

1997-09-01

199
200

Animal Models for Radiation Injury, Protection and Therapy  

Science.gov (United States)

... radiation during clinical therapy and exposures due to radiation accidents or attacks, in which the doses are uncontrolled ... only be used off-label in victims of radiation accidents or attacks. The idea...

201

Energetic electrons in impulsive and extended solar flares as deduced from flux correlations between hard X-rays and microwaves  

Energy Technology Data Exchange (ETDEWEB)

The peak flux relationship between hard X-rays and microwaves from solar flares is studied using about 400 events simultaneously recorded with the hard X-ray burst spectrometer on the SMM satellite and the Nobeyama 17 GHz radiometer. The data indicate that the hard X-ray and microwave peak fluxes correlate best for X-ray energies of less than about 80 keV for impulsive flares and greater than about 360 keV for extended flares. By postulating that electrons responsible for microwave emission at 17 GHz are those emitting hard X-rays at these photon energies, it is concluded that: (1) in impulsive flares, microwaves at about 20 GHz are emitted mainly by electrons of less than about 200 keV from a layer through which the electrons stream down into the thick-target hard X-ray source; and (2) in extended flares, microwaves are emitted mainly by MeV electrons trapped in a coronal loop or ...

1988-01-01

202

Replacement of bearing journals on heat transport pumps at the Wolsung nuclear generating station  

International Nuclear Information System (INIS)

The major details of the inspection and replacement of the bearing journals on each of the four heat transport pumps (HTPs) at Wolsung nuclear generating station in Korea are presented in this paper. Investigation following fracture of one of the journals in 1985 revealed that it was excessively hard. The journal material (ASTM A296 CA 40) is considered to be prone to stress corrosion fatigue if the hardness exceeds Rc 40. In 1986 May, during a planned outage, the HTPs were disassembled, the journals were inspected, found to be excessively hard, and all were replaced. At the same time, the pump to motor couplings were all refurbished to ensure proper alignment.

1987-11-22

203

Fabrication of beta-sialon having high hardness  

International Nuclear Information System (INIS)

Hardness of beta-sialon with four different composition index values of 0.25, 0.50, 0.75 and 1.0 in the system Ni/sub 3/N/sub 4/-AlN-Al/sub 2/O/sub 3/ with the addition of 6% Y/sub 2/O/sub 3/ as sintering aid has been reported. These composition were pressureless sintered for 90, 180 and 270 min in nitrogen atmospheres at temperatures ranging from 1650 to 1800 deg. C. Highest hardness was achieved when the composition index was 0.25 was sintered for 270 minutes at 1750 deg. C. (author).

204

An Apparent Hard X-ray Decline of CH Cygni  

CERN Document Server

CH Cygni is a symbiotic star consisting of an M giant and an accreting white dwarf, which is known to be a highly variable X-ray source with a complex, two-component, spectra. Here we report on two Suzaku observations of CH Cyg, taken in 2006 January and May, during which the system was seen to be in a soft X-ray bright, hard X-ray faint state. Based on the extraordinary strength of the 6.4 keV fluorescent Fe K-alpha line, we show that the hard X-rays observed with Suzaku are dominated by scattering.

2006-01-01

205

Plasma dynamics in PF-1000 device under full-scale energy storage: I. Pinch dynamics, shock-wave diffraction, and inertial electrode  

International Nuclear Information System (INIS)

This paper (paper I) presents the first part of results obtained with the PF-1000 facility for the first time at its upper energy limit (?1 MJ). Special attention is paid here to plasma ('pinch') dynamics, which was investigated in relation to its electro-technical and radiation (especially neutron) characteristics with the help of a number of diagnostics, both time-integrated and with nanosecond temporal resolution. In these methods we utilized a Rogowski coil for the routine electro-technical measurements, visual multi-frame and streak cameras, soft x-ray pin-hole multi-frame cameras, PIN-diode assembly and PM tubes with scintillators for soft and hard x-rays as well as for neutron investigations together with a set of activation counters. In particular, the temporal cross correlation of different phenomena taking place during the discharge was investigated. The pinch's longevity appears to be 10-15 times larger than the ideal ...

2007-04-07

206

Influence of gamma rays and some pre and post harvest treatments on behavior of some fruits during cold storage  

International Nuclear Information System (INIS)

Apricot fruits usually harvested relatively mature but hard enough to withstand-post harvest handling through the marketing chain. These fruits have considerably lower edible quality than tree-ripened fruit. Fruit quality can be improved by delaying harvest least until physiological maturation is completed on the tree (Bonghi et al. 1999) Apricots containing 11% soluble solids concentration, or higher are in high demand by consumers, as fruit have developed considerable taste, aroma and handling for long distance markets. (Kader, 1999). These fruit will be highly perishable, so rapid cold storage to the lowest safe temperature and supplementary treatments (Mc Donald et al, 1999) such as irradiation with the recommend doses (Sillano et al, 1994) or pre-storage heat treatments will be necessary to retard ripening (mainly softening) during 1-2 weeks post harvest life necessary for distribution to distant markets (Mc Donald et al 1999). Therefore, one can conclude that ...

2003-03-01

207

Dynamic-stiffness matrix of embedded and pile foundations by indirect boundary-element method  

Energy Technology Data Exchange (ETDEWEB)

The boundary-integral equation method is well suited for the calculation of the dynamic-stiffness matrix of foundations embedded in a layered visco-elastic halfspace (or a transmitting boundary of arbitrary shape), which represents an unbounded domain. It also allows pile groups to be analyzed, taking pile-soil-pile interaction into account. The discretization of this boundary-element method is restricted to the structure-soil interface. All trial functions satisfy exactly the field equations and the radiation condition at infinity. In the indirect boundary-element method distributed source loads of initially unknown intensities act on a source line located in the excavated part of the soil and are determined such that the prescribed boundary conditions on the structure-soil interface are satisfied in an average sense. In the two-dimensional case the variables are expanded in a Fourier integral in the wave number domain, while in three dimensions, Fourier series in ...

1984-08-01

208

What Makes Some Problems Really Hard: Explorations in the ...  

Science.gov (United States)

... of Hanoi or Missionaries and Cannibals, It is not immediately obvious what constitutes a "move"--that is, what actual manipulations of the physical ...

1988-09-01

210

SiAlON composite ceramics  

International Nuclear Information System (INIS)

Monolithic SiAlON ceramics are hard and brittle with little possibility for property design, but multi-phase SiAlON ceramics offer great scope for controlling microstructural development and desired properties. The ceramics can also be reinforced by separate additions of other hard, refractory compounds. The toughness in all these SiAlON composites can be increased by several mechanisms, and the best effect is reached if they are combined. When glassy phase is present, crack paths are affected by the strains caused by different thermal expansion of the glassy phase and the crystals and also by the interface properties. The crystal shape influence toughness, especially pronounced is the effect of the elongated #beta#- grains. Different toughening mechanisms are achieved by separately added reinforcement phases. The hardness is raised by the presence of #alpha# SiAlON and other hard constituents, such as ...

1993-10-04

211

Nomographs for the rapid prediction of salt quality and influent water quality impacts on hardness leakage in steamflood water  

Energy Technology Data Exchange (ETDEWEB)

Counter-current regeneration of 2-stage sodium zeolite softeners has been employed in reducing hardness leakage level of steamflooding water to less than 1 ppm when raw water contains as much as 5,000 ppm of the total dissolved solids. Hardness leakage is caused by sodium displacement of calcium and magnesium from the bottom of the exchanger bed. This study presents nomographs providing for rapid calculations to be made, for which a convenient operational mode does not already exist. The nomographs relate the hardness leakage as a function of salt quality and influent water quality and present solutions for predicting the leakage level, salt quality requirement or the treatability of raw water required for steamflooding projects.

1982-08-01

212

New Frontiers in Binary Stars: Science at High Angular ...  

Science.gov (United States)

... interacting systems in which common-envelope evolutionary effects make it hard to generalize the results to single-star evolution, although they ...

2011-05-15

213

Neurocysticercosis, a Persisting Health Problem in Mexico  

UK PubMed Central (United Kingdom)

BackgroundThe ongoing epidemiological transition in Mexico minimizes the relative impact of neurocysticercosis (NC) on public health. However, hard data on the disease frequency...Full Text Available

214

Necrotizing sialometaplasia of tongue  

UK PubMed Central (United Kingdom)

Necrotizing sialometaplasia, is a benign inflammatory lesion primarily involving the minor salivary glands of the hard palate. The lesion often presents itself as a deep-seated palatal ulcer with clinical...Full Text Available

2009-01-01

215

NASA - Top Dog K-9 Unit Keeps Kennedy Safe  

Science.gov (United States)

Oct 30, 2009... of Belgian sheepherding dogs that are popular with the police and military. ... "She was a hard-working K-9 and she will be missed." ...

216

Indentation Load Effect on Young Modulus and Hardness of Porous Sialon Ceramic by Dept Sensing Indentation Tests  

International Nuclear Information System (INIS)

Turkish English ... Authors Sahin, O. (Suleyman Demirel University, Department of Physics, Isparta (Turkey))

2007-08-28

218

Broad-band hard X-ray reflectors  

DEFF Research Database (Denmark)

Interest in optics for hard X-ray broad-band application is growing. In this paper, we compare the hard X-ray (20-100 keV) reflectivity obtained with an energy-dispersive reflectometer, of a standard commercial gold thin-film with that of a 600 bilayer W/Si X-ray supermirror. The reflectivity of the multilayer is found to agree extraordinarily well with theory (assuming an interface roughness of 4.5 Angstrom), while the agreement for the gold film is less, The overall performance of the supermirror is superior to that of gold, extending the band of reflection at least a factor of 2.8 beyond that of the gold, Various other design options are discussed, and we conclude that continued interest in the X-ray supermirror for broad-band hard X-ray applications is warranted.

1997-01-01

219

Statistical cut-off criterion  

International Nuclear Information System (INIS)

... radiation effects human populations low dose irradiation neoplasms radiation

1980-01-01

220

Radiation protection and the management of radioactive waste in the oil and gas industry  

CERN Document Server

Radiation protection and the management of radioactive waste in the oil and gas industry

2003-01-01

221

Higher harmonics of spontaneous radiation of ultrarelativistic channeled particles  

International Nuclear Information System (INIS)

The case of spontaneous radiation of channeled ultrarelativistic particles is considered when the dipolarity condition is not satisfied. The change of the particle longitudinal velocity affecting the maximum radiation frequency is included. The angular and frequency characteristics of the radiation for superhigh energies are studied for the first time. It is shown that there is an optimum energy at which the radiation density is maximum. The influence of the angle at which electrons enter a crystal and of the beam divergence on the radiation is investigated. The problem of quasichanneled particle radiation and also the radiation in axis-plane transitions are considered. (author).

1980-06-01

223

Contribution to the radiation preparation of wood-plastic materials. Pt. 7  

International Nuclear Information System (INIS)

... odd nuclei organic compounds radiation effects radioisotopes synthesis

1974-01-01

224

Contribution to the radiation preparation of wood-plastic materials. Pt. 6  

International Nuclear Information System (INIS)

... compounds polymers polyolefins polyvinyls radiation effects SYNTHESIS.

1974-01-01

225

Contribution to the radiation preparation of wood-plastic materials Pt. 3  

International Nuclear Information System (INIS)

... compounds plants radiation effects radioisotopes reaction kinetics trees

1974-01-01

226

Compact Proton and Carbon Ion Synchrotrons for Radiation Therapy  

CERN Document Server

Compact Proton and Carbon Ion Synchrotrons for Radiation Therapy

2002-01-01

227

? j -  

Science.gov (United States)

duced and spontaneous radiation. The amount of polarization is ... of the induced and spontaneous radiation patterns. Therefore ...

228

Rutherford backscattering study of the oxidation of palladium silicide on amorphous silicon substrates  

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

229

Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...

2003-12-31

230

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films  

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

231

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films  

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

1993-07-16

232

Characterization of arsenic dose loss at the Si/SiO{sub 2} interface  

Energy Technology Data Exchange (ETDEWEB)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

2000-03-01

233

Characterization of arsenic dose loss at the Si/SiO_2 interface  

International Nuclear Information System (INIS)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

2000-03-01

234

Systematics of average radiative width of heavy nuclides  

Energy Technology Data Exchange (ETDEWEB)

Systematics of neutron capture radiative width were studied in the target element range from Th to Cm. Reduced radiative widths were analyzed with a simple radiative width formula based on E1 transition. Average radiative width is presented with the standard deviation of 15%. (author)

1999-03-01

235

Ten-nanometer surface intrusions in room temperature silicon  

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

2002-01-01

236

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system  

Energy Technology Data Exchange (ETDEWEB)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

2005-12-15

237

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system  

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

2005-12-15

238

Selective emitters for thermophotovoltaic solar energy conversion  

Energy Technology Data Exchange (ETDEWEB)

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

1983-12-01

239

Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing  

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

2005-11-14

240

Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique  

Science.gov (United States)

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

1997-09-01

241

Hall mobility minimum of temperature dependence in polycrystalline silicon  

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

1998-01-01

242

Effect of mineralizer on the nitridation of sialon-bonded silicon carbide products  

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

243

Results for the structural properties of random heaps of hard disks  

Energy Technology Data Exchange (ETDEWEB)

The average angle of repose and the packing density of random planar heaps of hard disks falling ballistically onto a sticky base line, where the first layer of disks is quenched in random positions, are computed for heaps with a small fixed number of gaps in the base layer. The results we find appear to be almost independent of the size of the heap and they agree with those obtained from computer simulations of large systems.

1995-01-01

244

Electron-beam cladding of wear-resistant composite coatings on the base of titanium carbide  

International Nuclear Information System (INIS)

The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness

245

Whispering gallery modes in silicon-nanocrystal-coated silica microspheres  

Energy Technology Data Exchange (ETDEWEB)

Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.

2007-10-15

247

Surface activity and water repellency properties of cleavable-modified silicone surfactants  

British Library Electronic Table of Contents (United Kingdom)

A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...

2006-01-01

248

Summary of NSF Workshop on Research Opportunities in Manufacturing in the Process Industries  

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

249

Studies of relativistic heavy ion collisions at the AGS (Experiment 814)  

Energy Technology Data Exchange (ETDEWEB)

This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)

1990-01-01

250

Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides  

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

252

Recent advances in silicon-germanium alloy technology and an assessment of the problems of building the modules for a radioisotope thermoelectric generator  

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

253

Phonon - Drag Thermopo wer in Dilute Copper Alloys - NASA ...  

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

254

Performance of ceramics in ring/cylinder applications  

Energy Technology Data Exchange (ETDEWEB)

In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.

1987-01-01

255

Non-linearity and hysteresis of Hall effect in magnetorheological suspensions with conducting carrier  

Energy Technology Data Exchange (ETDEWEB)

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

2003-08-01

256

Investigation of lattice strains in layered structures containing porous silicon  

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

2001-09-23

257

Integrated Optics Anisotropic Waveguides and Devices  

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

1989-04-30

258

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF_2"+ ion implantation into silicon  

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

2002-01-01

259

Effect of recoil implantation of oxygen on boron enhanced diffusion in silicon  

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

1989-04-25

260

Effect of Si_3N_4 whisker and SiC platelet addition on phase transformation and mechanical properties of the #alpha#/#beta# sialon matrix composites  

International Nuclear Information System (INIS)

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

261

Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems  

Energy Technology Data Exchange (ETDEWEB)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

2006-03-06

262

Determination of the hydrogen content of a-Si films by infrared spectroscopy and 25 MeV #alpha#-particle elastic scattering  

International Nuclear Information System (INIS)

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

263

Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469  

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

1997-07-01

264

Chromium-Manganese Nonmagnetic Steels  

International Science & Technology Center (ISTC)

Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures

265

Boron diffusion in amorphous silicon  

Energy Technology Data Exchange (ETDEWEB)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

2005-12-05

266

Boron diffusion in amorphous silicon  

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

2005-12-05

267

Adhesive wear of iron chromium nickel silicon manganese molybdenum niobium alloys with duplex structure. Untersuchung von Eisen-Chrom-Nickel-Silizium-Mangan-Molybdaen-Niob-Legierungen mit Duplexgefuege auf adhaesiven Verschleiss  

Energy Technology Data Exchange (ETDEWEB)

Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

1991-11-01

268

Acrobat Distiller, Job 7 - GLTRS - NASA  

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

269

8 - NASA Technical Reports Server  

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

270

Variability and spectral modeling of the hard X-ray emission of GX 339-4 in a bright low/hard state  

CERN Document Server

We study the high-energy emission of the Galactic black hole candidate GX 339-4 using INTEGRAL/SPI and simultaneous RXTE/PCA data. By the end of January 2007, when it reached its peak luminosity in hard X-rays, the source was in a bright hard state. The SPI data from this period show a good signal to noise ratio, allowing a detailed study of the spectral energy distribution up to several hundred keV. As a main result, we report on the detection of a variable hard spectral feature (>150 keV) which represents a significant excess with respect to the cutoff power law shape of the spectrum. The SPI data suggest that the intensity of this feature is positively correlated with the 25 - 50 keV luminosity of the source and the associated variability time scale is shorter than 7 hours. The simultaneous PCA data, however, show no significant change in the spectral shape, indicating that the source is not undergoing a canonical ...

2010-01-01

271

The Hard X-ray Spectral Evolution in XRBs, AGNs and ULXs  

CERN Document Server

We explore the relationship between the hard X-ray photon index $\\Gamma$ and the Eddington ratio (\\xi=L_{X}(0.5-25 keV)/L_{Edd}) in six XRBs. We find that different XRBs follow different anti-correlations between $\\Gamma$ and $\\xi$ when $\\xi$ is less than a critical value, while they follow the same positive correlation when $\\xi$ is larger than the critical value. This anti-correlation and positive correlation are also found in LLAGNs and QSOs respectively, and the anti-correlation and positive correlation of different XRBs roughly converge to the same point ($\\log \\xi=-2.1, \\Gamma=1.5$), which may correspond to the accretion mode transition, since that the anti-correlation and positive correlation are consistent with the prediction of ADAFs and standard disk/corona system respectively. The traditional low/hard state are divided into two parts by the cross point $\\log \\xi\\sim-2.1$, i.e., faint-hard state in the ...

2008-01-01

272

Micro-hardness measurements to evaluate composition gradients in metal-based functionally graded materials  

Energy Technology Data Exchange (ETDEWEB)

Micro-Vickers hardness measurement has been used to determine the composition of functionally graded materials (FGMs). Materials used in the present study are Al-SiC, Al-Shirasu and Al-Al{sub 3}Ni FGMs, which are fabricated by a centrifugal method. The micro-hardness of the aluminum matrix for Al-SiC FGM markedly increases as the volume fraction of SiC particles increases. However, the tendency is not so clear in the cases of Al-Shirasu and Al-Al{sub 3}Ni FGMs. Plastic strain energy due to thermal misfits between the matrix and dipersed particles is calculated based on an elasto-plastic analysis by applying a shell theory after Lee et al. The hardness is correlated theoretically with the composition gradient through the mean plastic strain energy (responsible for dislocation density). It is concluded that the composition gradient of metal-based FGMs can be determined from micro-hardness measurements. ...

2001-01-01

273

Hard X-ray identification of Eta Carinae and steadiness close to periastron  

CERN Document Server

Context: The colliding-wind binary Eta Car exhibits soft X-ray thermal emission that varies strongly around periastron, and non-thermal emission seen in hard X-rays and gamma-rays. Aims: To definitively identify Eta Car as the source of the hard X-ray emission, to examine how changes in the 2-10 keV band influence changes in the hard X-ray band, and to understand more clearly the mechanisms producing the non-thermal emission using new INTEGRAL observations obtained close to periastron. Methods: A Chandra observation encompassing the ISGRI error circle was analysed, and all other soft X-ray sources (including the outer shell of Eta Car itself) were discarded as likely counter-parts. New hard X-ray images of Eta Car were studied close to periastron, and compared to previous observations far from periastron. Results: The INTEGRAL component, when represented by a power law (with a photon index of 1.8), ...

2010-01-01

274

Accretion Properties of A Sample of Hard X-ray (<60keV) Selected Seyfert 1 Galaxies  

CERN Document Server

We examine the accretion properties in a sample of 42 hard (3-60keV) X-ray selected nearby broad-line AGNs. The energy range in the sample is harder than that usually used in the similar previous studies. These AGNs are mainly complied from the RXTE All Sky Survey (XSS), and complemented by the released INTEGRAL AGN catalog. The black hole masses, bolometric luminosities of AGN, and Eddington ratios are derived from their optical spectra in terms of the broad H$\\beta$ emission line. The tight correlation between the hard X-ray (3-20keV) and bolometric/line luminosity is well identified in our sample. Also identified is a strong inverse Baldwin relationship of the H$\\beta$ emission line. In addition, all these hard X-ray AGNs are biased toward luminous objects with high Eddington ratio (mostly between 0.01 to 0.1) and low column density ($<10^{22} \\mathrm{cm^{-2}}$), which is most likely due to the selection effect of ...

2008-01-01

275

Development of internal dose estimation software on radiation protection  

International Nuclear Information System (INIS)

Objective: To develop a computerized method of internal dose estimation on radiation protection. Methods: Based on MIRD mathematic model of the organs and by means of the programming language of MS Visual Basic 6.0, a computer program of dose estimation in internal radiation was developed for radiation protection. Results: The computerized method of dose estimation for internal radiation was completed. Conclusions: This computerized method is very convenient for internal radiation dose estimation of several aspects. It can also be used in radiation accident. (authors)

2008-10-01

276

Theoretical transition energies, lifetimes and fluorescence yields of multiply ionized silicon  

Energy Technology Data Exchange (ETDEWEB)

Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.

1982-01-01

277

The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

1994-06-01

278

Study of transient enhanced dopant diffusion in silicon and proposed limiting methods  

International Nuclear Information System (INIS)

The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

2001-09-01

279

Soft X-ray spectra of amorphous hydrogenated silicon  

Energy Technology Data Exchange (ETDEWEB)

The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

1985-06-01

280

Silicone-rubber washers soothe vibrating transmission lines  

Science.gov (United States)

Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.

1965-01-01

281

Silicon nanopowder as active material for hybrid electrodes of lithium-ion batteries  

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

2011-01-01

282

On the theory of transient enhanced diffusion in boron-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

1991-01-01

283

On the theory of transient enhanced diffusion in boron-implanted silicon  

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

284

Developments and tests of double-sided silicon strip detectors and read-out electronics for the Internal Tracking System of ALICE at LHC  

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

1999-01-01

285

Determination of the conversion factor for infrared measurements of carbon in silicon  

Energy Technology Data Exchange (ETDEWEB)

The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.

1986-10-01

286

Boron uphill diffusion during ultrashallow junction formation  

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

2003-05-26

287

Application of Pd silicide in the process of silicon detectors  

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

1990-04-01

288

Anomalous sputter yields due to cascade mixing  

Energy Technology Data Exchange (ETDEWEB)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

1980-05-01

289

Anomalous sputter yields due to cascade mixing  

International Nuclear Information System (INIS)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

290

17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings  

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

2007-08-01

291

The evaluation of risks from radiation  

International Nuclear Information System (INIS)

German translation of the publication 'The evaluation of risks from radiation' published in 1965 by the International Commission on Radiological Protection. In a survey, genetic and somatic risks from radiation are presented and explained. (HP).

1977-01-01

293

Role of Mast Cells in Early and Delayed Radiation Injury in Rat Intestine  

Science.gov (United States)

... mast cell staining; ref. 16). The severity of structural radiation injury was assessed using a histopathological radiation injury score ... ...

294

Radionuclide X-ray fluorescence analysis. 1: Excitation of X-ray fluorescense radiation by nuclear radiation  

Science.gov (United States)

The principles of radionuclide excitation of X-ray fluorescence radiation and its application in

1972-01-01

295

Radionuclide X-ray fluorescence analysis. 2: Detection of the X-ray fluorescence radiation excited by radionuclide radiation  

Science.gov (United States)

This investigation describes the technique for the detection of the X-ray fluorescent radiation

1972-01-01

296

Radiation protection - an overview of the concept for radiation protection at work and the concept for environmental radiation protection  

International Nuclear Information System (INIS)

This book gives an overview of the entire field of radiation protection with the subject areas radioactivity, X-rays, UV radiation, laser beams and high-frequency electromagnetic fields. It deals graphically with the most important physical notions, the incidence, origin, properties and biological effects of types of radiation, administrative and practical protection measures and the code of rules governing them. Apart from fundamentals of radiation protection the emphasis on the following: natural radiation exposure, radiation exposure to radon, disaster relief plans in the environment of nuclear plant, the precautionary radiation protection system evolved after Chernobyl, radiation exposure through UV radiation devices, radio, RF communication, radar, microwave ovens and high-voltage transmission ...

1993-01-01

297

Systematics of high temperature perturbation theory: The two-loop electron self-energy in QED  

International Nuclear Information System (INIS)

In order to investigate the systematics of the loop expansion in high temperature gauge theories beyond the leading order hard thermal loop (HTL) approximation, we calculate the two-loop electron proper self-energy #SIGMA# in high temperature QED. The two-loop bubble diagram of #SIGMA# contains a linear infrared divergence. Even if regulated with a nonzero photon mass M of order of the Debye mass, this infrared sensitivity implies that the two-loop self-energy contributes terms to the fermion dispersion relation that are comparable to or even larger than the next-to-leading order (NLO) contributions of the one-loop #SIGMA#. Additional evidence for the necessity of a systematic restructuring of the loop expansion comes from the explicit gauge-parameter dependence of the fermion damping rate at both one and two loops. The leading terms in the high temperature expansion of the two-loop self-energy for all topologies arise from an explicit ...

2010-01-15

298

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides  

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...

2004-06-01

299

Investigation of #alpha#-sialon formation by high temperature X-ray diffraction  

International Nuclear Information System (INIS)

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...

1993-10-04

300

Enhanced biosorptive removal of cadmium from aqueous solutions by silicon dioxide nano-powder, heat inactivated and immobilized Aspergillus ustus  

British Library Electronic Table of Contents (United Kingdom)

Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...

2011-01-01

301

Electrochemical characterisation of patterned carbon nanotube electrodes on silane modified silicon  

Energy Technology Data Exchange (ETDEWEB)

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...

2008-07-20

302

Construction and Calibration of the Laser Alignment System for the CMS Tracker  

CERN Document Server

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...

2006-01-01

303

A plasma process for the synthesis of cubic-shaped silicon nanocrystals for nanoelectronic devices  

International Nuclear Information System (INIS)

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...

2007-04-21

304

WC-TiC-Ni cemented carbide with enhanced properties  

British Library Electronic Table of Contents (United Kingdom)

In the paper, the effect of Ni content, WC grain size and Mo2C addition on WC-6.25wt%TiC-9.3wt%Ni cemented carbide were investigated to improve the properties of Ni-bonded cemented carbides. The results show that the decrease of Ni content will result in the decrease of transverse rupture strength and increase of hardness; with the decrease of WC particle size, hardness increases due to the refinement of WC grains, however, the transverse rupture strength decrease due to the decrease of Ni binder thickness; Mo2C proves to be an effective grain growth inhibitor. With the increase of Mo2C content, the WC grains are refined and the hardness and transverse rupture strength are improved. Generally, when the Ni content is decreased to 8.4wt%, 13.45mm WC is used and 1.2wt% Mo2C is added, a higher...

2008-01-01

305

High temperature properties of ceramics in the SiAlON system  

International Nuclear Information System (INIS)

A series of SiAlON materials with a cordierite-based matrix were annealed for different lengths of time to cause crystallization of the glass phase. Their fracture toughness, hardness, and elastic modulus were measured from room temperature up to 1100"0C. The fracture toughness generally decreased with temperature. Short time annealing raised toughness at lower temperatures, while further annealing lowered it back to the value for as-hot pressed materials. At higher test temperatures annealing had no effect on toughness. This annealing behavior is significantly different from that previously reported in the system SaAlON-YAG. Hardness decreased monotonically with temperature for all samples. Both hardness and the elastic modulus were not affected by the annealing treatment. At elevated temperatures appreciable scatter of modulus results allowed only a rough trend of decrease with temperature to be observed.

306

First derivative of the hard-sphere radial distribution function at contact  

Energy Technology Data Exchange (ETDEWEB)

Molecular dynamics simulations have been carried out of the radial distribution function of the hard sphere fluid for a range of densities in the equilibrium fluid and just into the metastable region. The first derivative of the hard-sphere radial distribution function at contact was computed and its density dependence fitted to a simple analytic form. Comparisons were made with semi-empirical formulae from the literature, and of these the formula proposed by Tao et al (1992 Phys. Rev. A 46 8007) was found to be in best agreement with the simulation data, although it slightly underestimates the derivative at the higher packing fractions in excess of about 0.45. Close to contact, within a few per cent of the particle diameter, the radial distribution function can be represented well by a second order polynomial. An exponential function, which has some useful analytic features, can also be applied in this region.

2006-08-16

307

Evaluation of the Soft and Hard Tissue Changes After Anterior Segmental Osteotomy on the Maxilla and Mandible  

British Library Electronic Table of Contents (United Kingdom)

PurposeThe purpose of this study was to determine the relationship between the changes of soft and hard tissues after modified anterior segmental osteotomy on the maxilla and mandible and to evaluate unintended facial changes using cephalometric and photometric analyses.Materials and MethodsThe subjects included 29 women and 1 man (22 to 50 years of age) who were diagnosed as bialveolar or bimaxillary protrusion and underwent modified anterior segmental osteotomy on the maxilla and mandible. Lateral cephalograms and lateral and frontal photographs taken preoperatively and postoperatively were analyzed.ResultsThere was a significant change in all soft and hard tissue parameters except the labiomental angle. The ratio of upper lip to maxillary incisor retraction was 0.67:1 and the ratio of l...

2008-01-01

308

Elastic properties, hardness and indentation fracture toughness of #beta#-sialons  

International Nuclear Information System (INIS)

Dense samples of #beta#-sialons (with z from 1 to 4) were pressuressly sintered for different time (15-240 minutes) and at relatively low temperature of 1600 C using single-phase #beta#-sialon powders synthesized by combustion nitridation. The samples were characterized using ultrasonic method for determination of elastic properties (E,G,#mu#). Also, hardness by Knoop and fracture toughness by Vickers indentation microfracture method was estimated. With increasing z number Young's modulus decreases from 293 to 179 GPa. Simultaneously Poisson ratio increases by about 30%. The highest values of hardness and fracture toughness were obtained for sialon with z equal to 1. (orig.).

1993-10-04

309

Cumulative production of direct photons and leptonic pairs  

International Nuclear Information System (INIS)

Leptonic pair production on nuclei ad EMC-effect are discussed within the frames of the flucton model with scaling distortion. Cumulative production of direct photons and leptonic pairs as a test of the model of hard collisions is considered. The results of calculations of massive leptonic pair production cross sections on nucleus fluctons, caculations of the ratio of deuterium and iron structural functions, cross sections of direct photon production on sup(181)Ta nuclei at Esub(p)=400 GeV and cross section of #pi#-meson production in the model of hard collisions are presented. Experimental discovery of direct cumulative photons is concluded to be important for understanding the mechanism of parton hard scattering from nucleus fluctons.

1984-06-19

312

THE ENVIRONMENTAL MANAGEMENT AND CO-ORDINATION ACT, 1999  

Wastenet

Subject to the provisions of the Radiation Protection Act, the Authority, on the advice of ...(f) in collaboration with the Radiation Protection Board, conduct an ionising radiation monitoring programme and ...or document kept under the control of the Radiation Protection Board.

320

Application of gamma radiation  

International Nuclear Information System (INIS)

Described and discussed in this paper are radiation processes and their advantages over the conventional techniques. Radiation sterilization of medical products, food irradiation, wood plastic composites, and radiation treatment of sewage and waste waters are presented. The Philippine experience in using these technologies, its problems and barriers are also given. (ELC).

1985-12-10

324

Radiobiology  

International Nuclear Information System (INIS)

This text-book (electronic book - multi-media CD-ROM) constitutes a course-book - author's collection of lectures. It consists of 13 lectures in which the reader acquaints with the basis of radiobiology: Introduction to radiobiology; Physical fundamentals of radiobiology; Radiation of cells; Modification of radiation damage of cells; Reparation of radiation damage of cells; Radiation syndromes and their modification; Radiation injury; Radiation damage of tissues; Effect of radiation on embryo and fetus; Biological effects of incorporated radionuclides; Therapy of acute irradiation sickness; Delayed consequences of irradiation; Radiation oncology and radiotherapy. This course-book may be interesting for students, post-graduate students of chemistry, biology, physics, medicine as well as for teachers, scientific workers ...

325

Radiation Therapy in Treating Patients With Prostate Cancer  

Science.gov (United States)

Prostate Cancer; Psychosocial Effects of Cancer and Its Treatment; Radiation Toxicity; Sexual Dysfunction and Infertility

2011-09-13

327

NAME=\\  

Wastenet

... Radiation Protection Products and Equipment Find and compare a variety of radiation protection products and equipment on the world's largest environmental industry portal. View product ...

329

Standards and guidances for limiting ionizing radiation exposure  

Energy Technology Data Exchange (ETDEWEB)

This chapter is concerned with standards and guidances for limiting radiation exposures. It is divided into three sections, each of which has several parts. Section 1: Ionizing Radiation -- Standards and Guidances Applicable to the Public: Part A, Radiation Protection Standards; Part B, Environmental Radiation Standards; Part C, Exempt Levels of Radioactivity; Part D, Protective Action Guides for Accidents. Section 2: Ionizing Radiation -- Standards Applicable to the Workplace. Section 3: Medical and Other Standards.

1992-12-31

330

Radiation protection in the operating room  

International Nuclear Information System (INIS)

On the basis of legally provided area dose measurements and time records of fluoroscopic examinations during the operation, radiation doses to medical personnel and patients are evaluated. Adequate radiation protection measures and a careful behaviour in the operating room keep the radiation exposure to the personnel below the maximum permissible exposure. Taking into account the continuous personnel radiation monitoring and medical supervision, radiation hazards in the operating room can be considered low.

331

Wrinkled hard skins on polymers created by focused ion beam  

UK PubMed Central (United Kingdom)

A stiff skin forms on surface areas of a flat polydimethylsiloxane (PDMS) upon exposure to focused ion beam (FIB) leading to ordered surface wrinkles. By controlling the FIB fluence and area of exposure...Full Text Available

2007-01-23

332

TO: All GCN Notice recipients RE  

Science.gov (United States)

These sky images are scanned for point sources above a specified ... The threshold criteria are: a) Gold: >4 sigma in both the Soft AND Hard bands. b) Silver: ... Filtering: Currently, there is no plan for filtering within the GCN based ...

333

Role-Reversal Exercise with Deaf Strong Hospital to Teach Communication Competency and Cultural Awareness  

UK PubMed Central (United Kingdom)

ObjectiveTo implement a role-reversal exercise to increase first-year pharmacy students' awareness of communication barriers in the health care setting, especially for deaf and hard-of-hearing...Full Text Available

2011-04-11

334

Predicting outcome of rethoracotomy for suspected pericardial tamponade following cardio-thoracic surgery in the intensive care unit  

UK PubMed Central (United Kingdom)

ObjectivesPericardial tamponade after cardiac surgery is difficult to diagnose, thereby rendering timing of rethoracotomy hard. We aimed at identifying factors predicting the outcome...Full Text Available

335

Position-sensitive proportional counter for space-based X-ray imaging studies  

International Nuclear Information System (INIS)

ASTROSAT, India's first dedicated astronomy satellite is slated for launch in 2007. The primary science objective of ASTROSAT is to explore the Universe using broad-band instruments covering optical, UV, soft X-ray and hard X-ray studies

2005-03-01

336

Plasma nitriding of austenitic stainless steel in N_2 and N_2/H_2 gas admixture  

International Nuclear Information System (INIS)

Plasma nitriding in glow discharge is a process of modifying surface properties of a material by which surface hardness, corrosion resistance, fatigue strength etc. of a material can be improved

2004-09-01

337

Pattern of seat belt use by drivers in Trinidad and Tobago, West Indies  

UK PubMed Central (United Kingdom)

BackgroundIn Trinidad and Tobago, the law on the mandatory use of seat belts was passed in 1995, but this law is hardly enforced. The objective of this study was to determine the...Full Text Available

338

Nonlinear response of superconductors to alternating fields and currents  

Science.gov (United States)

This report discusses the following topics on superconductivity: nonlinearities in hard superconductors such as surface impedance of a type II superconductimg half space and harmonic generation and intermodulation due to alternating transport currents; and nonlinearities in superconducting weak links such as harmonic generation by a long Josephson Junction in a superconducting slab.

1997-10-08

339

Microstructural and mechanical characterization of high energy ball milled and sintered WC-10wt%Co-xTaC nano powders  

British Library Electronic Table of Contents (United Kingdom)

Ultra fine tungsten carbide and cobalt powders were milled by high energy planetary ball mill at different ball to powder weight ratios (BPR) to produce particles of WC-10wt%Co hard metal in nanometer scale size. Microstructural characterizations by TEM show that the particle size of tungsten carbide was achieved to 32nm after milling at 15 BPR during 10h. In order to reduce the WC grain growth during the sintering process, tantalum carbide was added to the hard metal as a WC grain growth inhibitor. The nano hard metal powders were compacted at 200MPa pressure and sintered at 1370-1450degreeC temperatures in a high purity hydrogen atmosphere. The results show that the addition of 0.6wt% of TaC improves the hardness and fracture toughness from 1493 HV30 and 11.8MPam (for TaC free sample) to...

2009-01-01

340

Mechanical properties of excimer laser modified titanium surfaces  

Energy Technology Data Exchange (ETDEWEB)

Excimer laser processing enables both thermally-driven transformations and the incorporation of solutes into the surface of materials through melting and diffusional mixing. We have examined the effect of excimer laser processing on the microstructure and surface mechanical properties of titanium alloys. Changes in the surface hardness due to laser processing were studied using a Nanoindenter [trademark]. Alloying experiments using both mixing of evaporated surface layers of boron and laser gas alloying in air and in nitrogen all result in changes in the surface hardness of the material. Alloying with boron results in an amorphous surface which is somewhat harder than the as polished surface. Laser processing in air and pure nitrogen results in incorporation of oxygen and nitrogen and the development of fine ([approximately] 50 nm) precipitates of TiO and TiN respectively. Substantial increases in surface hardness result ...

1993-01-01

341

Making simple sentences hard: Verb bias effects in simple direct object sentences  

UK PubMed Central (United Kingdom)

Constraint-based lexical models of language processing assume that readers resolve temporary ambiguities by relying on a variety of cues, including particular knowledge of how verbs combine...Full Text Available

2009-04-01

342

Learning the Hard Way: Force Protection 1983-2000.  

Science.gov (United States)

The October 2000 terrorist attack on the guided-missile destroyer USS Cole (DDG 67) in the port of Aden, Yemen, is commonly viewed in the larger context of al-Qa'ida's September 11th campaign. Beyond the initial official investigations, the military force...

2009-01-01

343

Laser hardening of titanium-zirconium alloy  

International Nuclear Information System (INIS)

The methods of surface modification of Ti-Zr alloy by laser treatment are considered. Characteristics of laser modification without- and with surface melting and with melting in different gaseous environments and with nickel microalloying are presented. Maximum depth, hardness and corrosion resistance are observed under nickel laser alloying.

344

Hardening by point defects in neutron irradiated AlN and SiC  

International Nuclear Information System (INIS)

Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence ...

345

Evolving hard problems: Generating human genetics datasets with a complex etiology  

UK PubMed Central (United Kingdom)

BackgroundA goal of human genetics is to discover genetic factors that influence individuals' susceptibility to common diseases. Most common diseases are thought to result from the...Full Text Available

346

Egg attachment of the asparagus beetle Crioceris asparagi to the crystalline waxy surface of Asparagus officinalis  

UK PubMed Central (United Kingdom)

Plant surfaces covered with crystalline epicuticular waxes are known to be anti-adhesive, hardly wettable and preventing insect attachment. But there are insects that are capable of gluing their eggs...Full Text Available

2010-03-22

347

Effect of Cr content, hardness and micro structure on flow-accelerated corrosion in carbon steel pipes. Examination of replaced carbon steel pipes  

International Nuclear Information System (INIS)

68 replaced carbon steel piping in secondary system of pressurized water reactor (PWR) has been investigated by visual examination for checking thinning conditions. It is well known that the flow-accelerated corrosion (FAC) was inhibited by traces of Cr in steel. Therefore, the chemical compositions of those steels have been measured. In addition, the micro structure and hardness of those steels have been investigated. And the relationship between those material variables and FAC rate was considered. As the results, (1) The Cr contents in those steels were below 0.1 wt% except one sample. Minute quantities of chromium increase the resistance against FAC. But the water velocity was thought to be the dominant factor rather than chemical composition in steel, at least such as below 0.1%Cr. (2) Hardness of all piping has been satisfied the specifications of each materials. The hardness of steels was not correlated with wall ...

2008-10-01

348

Correspondence of Ultrasound Elasticity Imaging to Direct Mechanical Measurement in Aging DVT in Rats  

UK PubMed Central (United Kingdom)

Previous ultrasound elasticity imaging experiments supported a generally accepted concept that the hardness of deep venous thrombi increases with thrombus aging. Results also showed that this...Full Text Available

2005-10-01

349

Adhesion of DOPA-Functionalized Model Membranes to Hard and Soft Surfaces  

UK PubMed Central (United Kingdom)

The adhesive proteins secreted by marine mussels form a natural glue that cures rapidly to form strong and durable bonds in aqueous environments. These mussel adhesive proteins contain an unusual...Full Text Available

2009-01-01

350

A comparison of the corrosion behaviour and hardness of steel samples (100Cr6) coated with titanium nitride and chromium nitride by different institutions using different deposition techniques  

Energy Technology Data Exchange (ETDEWEB)

Deposition of hard coatings may influence the mechanical properties of the bulk material and its corrosion resistance. In this work we study the hardness of the coated and the back side of 100Cr6 steel plates. Electrochemical corrosion tests were performed in O{sub 2}-saturated acetate buffer of pH 5.6 at 25degC. Chromium nitride and titanium nitride coatings prepared by different physical vapour deposition processes, such as arc, thermionic arc evaporation, magnetron sputtering and ion-beam-assisted deposition (IBAD) were compared. The results show that, for sufficient corrosion protection, chromium nitride layers have to be thicker than 500 nm. An increased nitrogen partial pressure in the evaporation chamber of the IBAD process improves the corrosion resistance significantly. The hardness of the substrates was reduced in the case of thermoionic arc evaporation only, indicating a deposition temperature of more than ...

1991-07-07

351

The rate-limiting mechanism of transition metal gettering in multicrystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...

1997-04-01

352

Silicon purification melting for photovoltaic applications  

Energy Technology Data Exchange (ETDEWEB)

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

2000-04-01

353

Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (XVIII), December 1, 1979-February 29, 1980  

Energy Technology Data Exchange (ETDEWEB)

Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...

1980-03-01

354

Wear resistance of a laser surface alloyed Ti-6Al-4V alloy  

Energy Technology Data Exchange (ETDEWEB)

Laser surface alloying with gaseous nitrogen was utilized to improve the wear resistance of a Ti-6Al-4V alloy. Wear-resistant composite coatings reinforced by hard TiN dendrites were produced 'in-situ' on a substrate of a Ti-6Al-4V alloy. The hardness and wear resistance of the laser alloyed coating under two-body abrasive and block-on-ring full-sliding wear conditions were significantly enhanced. (orig.)

2000-08-01

355

Numerical prediction of flow field and particle trajectory in a hard disk drive  

Energy Technology Data Exchange (ETDEWEB)

A flow field and particle trajectory in a HDD (Hard Disk Drive) between two rotating disks in axisymmetric enclosures is investigated using CFD code FLUENT/UNS. The RNG k-{epsilon} model is used as a turbulent model. In this study, the flow field between two disks are symmetric, and the flow field near the enclosure is very complex. Cross stream vectors are shown both for blowing and no blowing from the hub. The larger a particle, the more fast the particle deposits at the walls. In the case of blowing from the hub, the more fast the particle deposits at the walls. (author). 9 refs., 12 figs., 1 tab.

1999-11-01

356

Manufacturing of golf club using wood-plastic combination produced by. gamma. -irradiation  

Energy Technology Data Exchange (ETDEWEB)

Wood-plastic combination (WPC) was produced by {gamma}-irradiation of persimmon impregnated with acrylonitrile and styrene. The hardness and strength of WPC obtained were higher than those of an unmodified wood. Thus, it was found that the WPC is suited for a head of golf club, because the Shore hardness value of WPC is 36% greater than that of unmodified wood. An impregnation method of monomers with some pigments could produce colored WPC without diminishing natural grain. Head of golf club could be manufactured from colored WPC in practice. (auhtor).

1992-01-01

357

Manufacturing of golf club using wood-plastic combination produced by #gamma#-irradiation  

International Nuclear Information System (INIS)

Wood-plastic combination (WPC) was produced by #gamma#-irradiation of persimmon impregnated with acrylonitrile and styrene. The hardness and strength of WPC obtained were higher than those of an unmodified wood. Thus, it was found that the WPC is suited for a head of golf club, because the Shore hardness value of WPC is 36% greater than that of unmodified wood. An impregnation method of monomers with some pigments could produce colored WPC without diminishing natural grain. Head of golf club could be manufactured from colored WPC in practice. (auhtor).

1992-01-01

358

Hard X-ray phase imaging and tomography using a grating interferometer  

International Nuclear Information System (INIS)

An interferometric technique for hard X-rays is presented. It is based on two transmission gratings and a phase-stepping technique, and it provides separate radiographs of the phase and absorption profiles of bulk samples. Tomographic reconstruction yields quantitative three-dimensional maps of the X-ray refractive index and of the attenuation coefficient, with a spatial resolution down to a few microns. The method is mechanically robust, it requires little monochromaticity, and can be scaled up to large fields of view. These are important prerequisites for use with laboratory X-ray sources. Numerous applications ranging from wave front sensing to medical radiography are presently under investigation.

2007-07-01

359

Glow Discharge Plasma Nitriding of AISI 304 Stainless Steel  

International Nuclear Information System (INIS)

Glow discharge plasma nitriding of AISI 304 austenitic stainless steel has been carried out for different processing time under optimum discharge conditions established by spectroscopic analysis. The treated samples were analysed by X-ray diffraction (XRD) to explore the changes induced in the crystallographic structure. The XRD pattern confirmed the formation of an expanded austenite phase (#gamma#_N) owing to incorporation of nitrogen as an interstitial solid solution in the iron lattice. A Vickers microhardness tester was used to evaluate the surface hardness as a function of indentation depth (#mu#m). The results showed clear evidence of surface changes with substantial increase in surface hardness.

2007-08-01

360

Effects of variable hardness, ph, alkalinity, suspended clay, and humics on the chemical speciation and aquatic toxicity of copper  

Science.gov (United States)

The effects of variable hardness, pH, alkalinity, humics, and suspended clay on the chemical speciation of copper and its toxicity to fathead minnow larvae in Lake Superior water were investigated. Two proposed methods (toxicity factors and chemical speciation) for predicting LC50 values in specific natural waters from laboratory toxicity data and the average site specific values of general water quality parameters were evaluated. The accuracy of the cupric ion-selective electrode in determining CU/sup +2/ activities in ambient and chemically altered Lake Superior water was also determined.

1986-03-01

361

Distribution of 6q-fluctons in nuclei and quark enhancement of hard processes with deuteron emission  

International Nuclear Information System (INIS)

The distributions of the effective numbers of 6q-fluctons in the energy, momentum and distance to the center of mass of nucleus are studied. Many characteristics of these distributions are shown to be universal, i.e. independent of the flucton size. The saturation of the flucton density in A > 80 nuclei and other peculiarities are found, which define different behavior of the effective numbers of fluctons and deuterons. This fact provides an explanation of the known underestimate by a factor of 1.5-6 of the cross sections of hard inclusive (p, p'd) process on nuclei calculated in the quasi-elastic approximation.

362

Current situation of steel industry and coking coal industry and expectations for Canadian coal  

Energy Technology Data Exchange (ETDEWEB)

The world steel industry and market and the current status and prospects for the Japanese steel industry are discussed with particular reference to China, Europe, and the US. Trends in coking coal supply from Australia, Canada, and Mongolia and changes in demand for hard and semi-soft coking coals are considered. Canadian coal plays a significant role in the hard coking coal and PCI coal markets. This is expected to continue. Emerging concerns include the strong Canadian dollar and increases in fuel and materials costs. Canadian suppliers are asked to improve efficiencies, be competitive in the overall coal chain, and diversify their PCI coal reserves. 14 figs.

2006-07-01

363

A low temperature synthesized NbC grain growth inhibitor in WC-Co hardmetal alloy  

Energy Technology Data Exchange (ETDEWEB)

The efficiency of NbC on WC grain coarsening in a WC-10wt.%Co hardmetal alloy was demonstrated by hardness measurement and WC granulation observation. The heterogeneous and overall grain growth were controlled. A low temperature experimentally produced NbC was used and compared to the inhibition potential of a commercial NbC powder. The results were the same in terms of structural fineness and hardness. The dispersion of the experimental NbC was not a problem, in spite of its size. The experimental NbC has very large particles, formed by agglomerates of small crystallites. During milling these agglomerates could be broken down. (orig.)

2001-07-01

364

A Virtual Young's Double Slit Experiment for Hard X-ray Photons  

CERN Document Server

We have implemented a virtual Young's double slit experiment for hard X-ray photons with micro-fabricated bi-prisms. We observe fringe patterns with a scintillator, and quantify interferograms by detecting X-ray fluorescence from a scanned 30nm Cr metal film. The observed intensities are best modeled with a near-field, Fresnel analysis. The maximum fringe number in the overlap region is proportional to the ratio of real to imaginary parts refractive index of the prism material. The horizontal and vertical transverse coherence lengths at beamline APS 8-ID are measured.

2009-01-01

365

A kinetic and mechanistic study of the oxidation of silicon- and thin metal silicide layers  

International Nuclear Information System (INIS)

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...

366

Survey of Radiation Protection Education and Training in Finland in 2003  

Energy Technology Data Exchange (ETDEWEB)

The current state and need for radiation protection training in Finland have been surveyed by the Radiation and Nuclear Safety Authority STUK. The survey sought to determine whether the current requirements for radiation protection training had been met, and to promote radiation protection training. Details of the scope and quality of present radiation protection training were requested from all educational institutes and organizations providing radiation protection training. The survey covered both basic and further training, special training of radiation safety officers, and supplementary training. The questionnaire was sent to 77 educational organization units, 66 per cent of which responded. Radiation workers and radiation safety officers were asked about radiation protection ...

2004-07-01

367

RF plasma nitriding of severely deformed iron-based alloys  

International Nuclear Information System (INIS)

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10"-"5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of #epsilon# and #gamma#' nitrides in the compound layer, with a preferential formation of #gamma#' at the expense of the #alpha#-phase at the higher nitriding ...

2003-05-15

368

Water-repellency and antibacterial activities of plasma-treated cleavable silicone surfactants on nylon fabrics  

British Library Electronic Table of Contents (United Kingdom)

In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...

2006-01-01

369

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

1985-08-01

370

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon  

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

371

The fraction of substitutional boron in silicon during ion implantation and thermal annealing  

Energy Technology Data Exchange (ETDEWEB)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

1998-05-01

372

The fraction of substitutional boron in silicon during ion implantation and thermal annealing  

International Nuclear Information System (INIS)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

1998-05-01

373

The formation of aluminum phosphide in aluminum melt treated with an Al-Fe-P inoculant addition  

Energy Technology Data Exchange (ETDEWEB)

The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)

2001-04-01

374

Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum  

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

2011-01-01

375

Solar thermophotovoltaic (STPV) system with thermal energy storage  

Energy Technology Data Exchange (ETDEWEB)

A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}

1996-02-01

376

Schottky barrier modulation on silicon nanowires  

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

2007-03-26

377

SSRM characterisation of FIB induced damage in silicon  

International Nuclear Information System (INIS)

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.

2008-03-01

378

Response characteristics of base-isolated structure with silicone rubber bearings  

International Nuclear Information System (INIS)

More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992

1993-08-15

379

Properties of low residual stress silicon oxynitrides used as a sacrificial layer  

Energy Technology Data Exchange (ETDEWEB)

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

2000-01-04

380

Prediction of transient-enhanced diffusion during rapid thermal annealing of ion-implanted silicon  

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

1985-03-01

381

Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon  

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

1999-01-01

382

Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure  

International Nuclear Information System (INIS)

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

2011-07-07

383

Nano silicon for lithium-ion batteries  

Energy Technology Data Exchange (ETDEWEB)

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)

2006-11-12

384

Metallization of large silicon wafers. Quarterly technical report No. 1, August 26--December 31, 1977. [45 references  

Science.gov (United States)

A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).

1977-01-01

385

Material-induced shunts in multicrystalline silicon solar cells  

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-15

386

Material-induced shunts in multicrystalline silicon solar cells  

International Nuclear Information System (INIS)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-01

387

Material-induced shunts in multicrystalline silicon solar cells  

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-01-01

388

Macro-Cellular Silicon carbide Reactors for Nonstationary Combustion Under Piston Engine-Like Conditions  

British Library Electronic Table of Contents (United Kingdom)

Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.

2011-01-01

389

Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films  

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

1998-09-01

390

Influence of silicon, copper and cobalt on corrosion cracking and pitting corrosion in 03Kh18N30 steel  

International Nuclear Information System (INIS)

The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.

391

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator  

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

392

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator  

International Nuclear Information System (INIS)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

393

Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report  

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

394

The benefits of low level radiation  

Energy Technology Data Exchange (ETDEWEB)

The assumed linear relationship between exposure to radiation and cancer incidence is questioned in this article. The current research data on radiation effects at the cellular level is reviewed, as are epidemiological studies of background radiation effects and health effects of populations exposed to low levels of radiation exposure via employment or medical treatments. Statistics reveal that threshold levels currently in force need to be reviewed. Some evidence of beneficial effects of low level radiation exposure effects of low level radiation exposure is also presented, and so regulations should be reviewed at an international level. (UK).

1997-06-01

395

Stimulated radiation of high - current relativistic electron beams  

International Nuclear Information System (INIS)

The most propagated mechanisms of stimulated radiation of electron beam such as Cherenkov one-particle and collective effects, ondulator and magnetic bremsshrahlung radiations, Doppler anomalous effect, Thompson and Raman scattering and radiation are discussed. Relation of spontaneous radiation mechanisms of individual electron and stimulated radiation effects in electron beams has been elucidated, grounds of linear electrodynamics of radiative beam instabilities are stated, and main mechanisms of their nonlinear stabilization are elucidated as well. Various simulated processes in electron beams are considered from the unique point of view using a simple mathematical apparatus and such physical laws as conservation and Newton laws.

1987-01-01

396

Wafer and Solar Cell Characterization by GT-PVSCAN6000  

Science.gov (United States)

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

2002-08-01

397

Transient enhanced diffusion of boron in silicon: The interstitial flux  

Energy Technology Data Exchange (ETDEWEB)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...

1997-11-01

398

Transient enhanced diffusion of boron in silicon: The interstitial flux  

International Nuclear Information System (INIS)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...

1996-12-02

399

Thermal stability and acid resistance of aluminosilicophosphate zeolites  

Energy Technology Data Exchange (ETDEWEB)

By isomorphous replacement of silicon by phosphorus the authors have synthesized crystalline aluminosilicophosphates with structures of the zeolites type A and faujasite. They determine the adsorption capacity of specimens treated at 575-1275/sup 0/K. They show that the thermal stability and acid resistance of aluminosilicophosphates depend on the quantity of phosphorus in their structure.

1987-04-01

400

Silicon front-end technology -- Materials processing and modeling. Materials Research Society symposium proceedings Volume 532  

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...

1998-07-01

401

NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference  

Energy Technology Data Exchange (ETDEWEB)

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

1993-05-01

402

Method of restoring degraded solar cells  

Energy Technology Data Exchange (ETDEWEB)

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

1983-01-01

403

Metallization of large silicon wafers. Final report  

Science.gov (United States)

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...

404

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials  

Energy Technology Data Exchange (ETDEWEB)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} ...

2004-11-15

405

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials  

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...

2004-11-01

406

J4P Evaluation of Externally Heated Pulsed MPD Thruster Cathodes  

Science.gov (United States)

twenty 350 V, 2.5 mF aluminum electrolytic capacitors with 10.8 mH inductors made of multi-strand wire. The PFN discharge was controlled using an silicon ...

407

Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors  

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...

1992-08-28

408

Investigations into the nature of a silicoaluminophosphate with the faujasite structure  

Energy Technology Data Exchange (ETDEWEB)

The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.

1987-04-29

409

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF{sub 2}{sup +} ion implantation into silicon  

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

2002-01-01

410

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate  

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

2004-06-30

411

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate  

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

2004-06-30

412

INVESTIGATION OF GLASS-METAL COMPOSITE ...  

Science.gov (United States)

... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...

1957-09-01

413

Evolution of surface roughness in silicon X-ray mirrors exposed to a low-energy ion beam  

International Nuclear Information System (INIS)

The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...

2010-05-01

414

Enhancing stability of austenitic stainless steels to intergranular corrosion in strongly-oxidising media by regulating composition of impurities  

International Nuclear Information System (INIS)

Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At ...

1984-01-01

415

Displaced capillary dies  

Energy Technology Data Exchange (ETDEWEB)

An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.

1982-01-01

416

Chromized/siliconized diffusion coatings for iron-base alloy by pack cementation  

Energy Technology Data Exchange (ETDEWEB)

This paper reports that the co-deposition of chromium and silicon into a 2.25Cr-1.0Mo-0.15C steel, alloy 800, and type 304 stainless steel has been achieved using the pack cementation process. The ferritic coating produced on the 2.25 Cr-1.0Mo steel was approximately 225 {mu}m (9 mils) thick, whereas the inward diffusion of chromium and silicon produced a two-phase structure of ferrite and austenite for type 304. Chromium and silicon were incorporated into the austenitic solid solution upon diffusion into alloy 800. All coatings had approximately 25 to 35 wt% Cr and 2 to 3% Si at the surface. Cyclic oxidation testing in air of the coated 2.25Cr-1.0Mo steel (T = 700{degrees} C) and type 304 (T = 1035{degrees} C) showed a dramatic decrease in the oxidation kinetics compared to the original uncoated alloys. The cyclic oxidation of alloy 800 was also improved.

1991-09-01

417

Changes in colonic motility induced by sennosides in dogs: evidence of a prostaglandin mediation.  

UK PubMed Central (United Kingdom)

The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available

1988-09-01

418

An analytic representation of the radial distribution of dose from energetic heavy ions in water, Si, LiF, and NaI  

International Nuclear Information System (INIS)

An earlier representation of the radial distribution of dose about the path of a heavy ion in liquid water is modified and extended to include silicon, lithium fluoride, and sodium iodide. 6 refs., 5 figs., 1 tab.

1989-09-01

419

2005 NASA Executive Capability Roadmap Report  

Science.gov (United States)

ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...

420

.N& 21762 - NASA Technical Report Server (NTRS)  

Science.gov (United States)

of the supplier of pulled p-type silicon material. of G-6 and E 8 centers irradiated in the 1 t o 3 MeV range. tions w i l l be performed using the General ...

421

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

1998-09-18

422

Simple integral screenprinting process for selective emitter polycrystalline silicon solar cells  

Energy Technology Data Exchange (ETDEWEB)

This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.

1991-09-23

423

Self-interstitial supersaturation during Ostwald ripening of end-of-range defects in ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

1996-12-01

424

Reactive sticking coefficients for silane and disilane on polycrystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.

1988-04-15

425

Polysilicon TFT fabrication on plastic substrates  

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

1997-08-06

426

On the influence of silicon oxide nanoparticles on the optical and surface properties of hybrid (inorganic-organic) barrier materials  

Energy Technology Data Exchange (ETDEWEB)

One of the major scientific and technological challenges for the production of flexible organic electronic devices is the device protection against atmospheric molecule permeation, which causes corrosion reducing its operation and lifetime. In this work, Spectroscopic Ellipsometry has been implemented to investigate the influence of silicon dioxide nanoparticles on the optical properties of hybrid polymers. The spectra analysis revealed valuable information about the electronic and vibrational response as well as the cross-linking mechanisms of these materials. The correlation of the optical properties with the synthesis parameters and the barrier response will contribute towards their optimization in order to be used as high barrier coatings for flexible organic electronics applications.

2009-10-01

427

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants  

Energy Technology Data Exchange (ETDEWEB)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1997-11-01

428

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants  

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1996-12-02

429

Measurement of liquid xenon scintillation from heavy ions using a silicon photodiode  

Energy Technology Data Exchange (ETDEWEB)

Scintillation light in liquid xenon excited by 100 MeV/n Al ions was detected with a home-made silicon photodiode. The diameter of the photodiode was 2 inch. The effective quantum efficiency was observed to be 22% for the wavelength of liquid xenon scintillation light (170 nm), while the effective quantum efficiency for 5.486 MeV alpha-particle excitation was 44%. An energy resolution of 0.5% rms was achieved for the energy deposition of 2.5 GeV in liquid xenon using a fast preamplifier ({approx equal} 20 ns). (orig.).

1991-11-15

430

Development of low cost contacts to silicon solar cells  

Science.gov (United States)

The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.

1980-01-01

431

Combining laser chemical processing and aerosol jet printing: a laboratory scale feasibility study  

British Library Electronic Table of Contents (United Kingdom)

Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.

2011-01-01

432

SIMS analysis of silicon on insulator structures formed by high-dose O/sup +/ implantation into silicon  

Energy Technology Data Exchange (ETDEWEB)

Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...

1983-12-15

433

Molecular dynamics studies of silicon ion implantation  

Energy Technology Data Exchange (ETDEWEB)

Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary ...

1994-12-31

434

Light-weight free-standing carbon nanotube-silicon films for anodes of lithium ion batteries.  

Science.gov (United States)

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...

2010-07-27

435

Radiation protection. A guide for scientists and physicians  

International Nuclear Information System (INIS)

This manual was written for individuals who wish to become qualified in radiation protection as an adjunct to working with sources of ionizing radiation or using radionuclides in the field of medicine. It provides the radiation user with information needed to protect himself and others and to understand and comply with governmental and institutional regulations regarding the use of radionuclides and radiation machines. It is designed for a wide spectrum of users, including physicians, research scientists, engineers, and technicians. It should be useful also to radiation safety officers, members of radiation safety committees, and others who are responsible for the proper use of radiation sources, although they may not be working with the sources directly. The presentation in this manual is designed to obviate the need for reviews of atomic ...

436

Combining satellite data and models to estimate cloud radiative effect at the surface and in the atmosphere  

British Library Electronic Table of Contents (United Kingdom)

Abstract Satellite measurements and numerical forecast model reanalysis data are used to compute an updated estimate of the cloud radiative effect on the global multi-annual mean radiative energy budget of the atmosphere and surface. The cloud radiative cooling effect through reflection of short wave radiation dominates over the long wave heating effect, resulting in a net cooling of the climate system of - 21 Wm-2. The short wave radiative effect of cloud is primarily manifest as a reduction in the solar radiation absorbed at the surface of - 53 Wm-2. Clouds impact long wave radiation by heating the moist tropical atmosphere (up to around 40 Wm-2 for global annual means) while enhancing the radiative cooling of the atmosphere over other regions, in particular higher latitudes and sub-trop...

2011-01-01

437

Biological effects of electromagnetic radiation in the microwave range  

Energy Technology Data Exchange (ETDEWEB)

The book examines current experimental and clinical knowledge concerning the biological and biophysical effects of electromagnetic radiation, particularly that in the microwave range. The biophysical bases of the interaction of electromagnetic radiation with matter are reviewed with emphasis on biological systems, and the effects of radiation on critical biological systems, including the nervous, reproductive, visual and blood-forming systems are compared. Data concerning the lethal effects of nonionizing radiation is presented and characteristics of the effects of electromagnetic radiation on the whole mammalian organisms are examined. Various reactions of the neuroendocrine system to electromagnetic radiation are described, with particular attention given to the adrenal system, and the combined effects of ionizing and microwave radiation ...

1980-01-01

438

[The indicators of biological age and accelerated aging in liquidators of the consequences of radiation emergency].  

Science.gov (United States)

The biological age (BA) of the majority of the liquidators of the consequences of the radiation accidents in the Navy and of the liquidators of the Chernobyl' APS accident exceeds the medium standard and the DBA (due BA). The index of the BA can be a characteristic of the influence of the social-hygienic factors on the health condition of the Special Risk Subunit--the liquidators of the consequences of the radiation accidents. It was established, that the radiation influence concerns to the factors dramatically increasing the BA and the rate of senescence of the liquidators of the consequences of the radiation accidents. PMID:21809627

2011-01-01

439

The THz Radiation from Undulator  

Science.gov (United States)

The experimental device for generation of undulator radiation in terahertz wavelength region by use of undulator with ferromagnets is created. The device is based on a beam of a microtron with the energy 7.5 MeV. The radiation wavelength is 200 mu. Registered spontaneous radiation has a power 10{sup -6} W at a current of a beam 2 mA in a pulse. With the optical resonator, in a mode, the amplification of 6% is received, that in sometimes is more than the expected value. This effect is explained as a result of partial coherence of radiation.

2010-02-03

440

Study of emission of Cerenkov radiation by tachyons  

Energy Technology Data Exchange (ETDEWEB)

The emission of Cerenkov radiation by tachyons has been examined by using the reduced expansions of superluminal electromagnetic fields in terms of standard helicity representation of Poincare group. It has been shown that the tachyons emit Cerenkov radiation through their coupling only with subluminal electromagnetic fields and that a charged tachyon can emit Cerenkov radiation only in the media in which it travels with a velocity lower than that of light while in the usual medium in which its velocity is more than that of light, it will never emit Cerenkov radiation.

1983-01-01

441

Radiation facility with electron accelerator of the Institute for Nuclear Research of Ukraine, Kiev  

International Nuclear Information System (INIS)

Characteristics of the Ukrainian NSA NRI radiation facility for scientific researches and developments of industrial radiation technology are performed. Parts of the facility, design peculiarities of technical tools are described. Biological protection of the facility and radiation protection system, transport line, systems of technical provision and radiation measurements are discussed

2003-02-01

442

Radiation exposure of the population of the GDR by X-ray diagnostics  

International Nuclear Information System (INIS)

The radiation burden of the people of the GDR in relation to biomedical radiography altogether as well as organ doses, gonad doses and genetically significant doses in detail are outlined. The concepts of radiation protection and standards of radiographic examination are demonstrated. Possibilities of influencing radiation exposure by scientifically based indication of X-ray examination, application of new and improvement of usual examination techniques are discussed with regard to quality assurance and control. Proposals concerning the reduction of radiation exposure of the GDR population are presented.

1986-01-01

443

Potential Hazards from Neutrino Radiation at Muon Colliders  

CERN Document Server

High energy muon colliders, such as the TeV-scale conceptual designs now being considered, are found to produce enough high energy neutrinos to constitute a potentially serious off-site radiation hazard in the neighbourhood of the accelerator site. A general characterization of this radiation hazard is given, followed by an order-of-magnitude calculation for the off-site annual radiation dose and a discussion of accelerator design and site selection strategies to minimize the radiation hazard.

1999-01-01

444

Model of quantum noise of shadow radiation images  

International Nuclear Information System (INIS)

Correlation characteristics of quantum noise on the shadow radiation image (RI) of the object under nondestructive testing are studied. Mathematical model of RI occasional distortions is derived. The model takes into account the parameters of object under testing and of radiation beam by radiation quanta flux density. The results obtained can be used as a component in the process of investigation of various radiation testing systems

445

Coherent oscillator radiation  

International Nuclear Information System (INIS)

Coherent oscillator radiation is considered. A comparison is made with classical particle radiation with gauss distribution. Decay probability for coherent state in spontaneous radiation is estimated. The method suggested for describing harmonic oscillator allows to separate the effect of classical field radiation from quantum description of particle state within the framework of a self-consistent quantum mechanical problem.

1982-04-01

446

Plasma nitriding and plasma nitrocarburizing of electroplated hard chromium to increase the wear and the corrosion properties  

Energy Technology Data Exchange (ETDEWEB)

We have investigated the effect of plasma nitriding and plasma nitrocarburizing on the microstructure and properties of electroplated chromium. Plasma nitriding and plasma nitrocarburizing are applied to 15-100 [mu]m thick electroplated hard chromium coatings to increase both the wear and the corrosion resistance. The properties of the plasma-modified hard chromium layers are characterized by measuring the wear resistance with a Taber wear tester and the corrosion resistance with a salt spray fog test. Cyclic voltammetry is performed in a standard electrochemical cell using a 0.5 M H[sub 2]SO[sub 4] solution acidified to pH 0.3. The compound layer after plasma nitriding consists of CrN and Cr[sub 2]N with a maximum hardness of about 1100 HK[sub 0.01]. After plasma nitrocarburizing, Cr[sub 3]C[sub 2] and Cr[sub 7]C[sub 3] are formed. After plasma nitrocarburizing, the maximum hardness is increased up to ...

1999-02-01

447

Hard spectator interactions in B {yields} {pi}{pi} at order {alpha}{sup 2}{sub s}  

Energy Technology Data Exchange (ETDEWEB)

In the present thesis I discuss the hard spectator interaction amplitude in B {yields} {pi}{pi} at NLO i.e. at O({alpha}{sup 2}{sub s}). This special part of the amplitude, whose LO starts at O({alpha}{sub s}), is defined in the framework of QCD factorization. QCD factorization allows to separate the short- and the long-distance physics in leading power in an expansion in {lambda}{sub QCD}/m{sub b}, where the short-distance physics can be calculated in a perturbative expansion in {alpha}{sub s}. Compared to other parts of the amplitude hard spectator interactions are formally enhanced by the hard collinear scale {radical}({lambda}{sub QCD}m{sub b}), which occurs next to the mb-scale and leads to an enhancement of {alpha}{sub s}. From a technical point of view the main challenges of this calculation are due to the fact that we have to deal with Feynman integrals that come with up to five external legs and with three ...

2007-05-31

448

Graded layer design for stress-reduced and strongly adherent superhard amorphous carbon films  

Energy Technology Data Exchange (ETDEWEB)

Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with high compressive stress in the order of 4 ...

1999-09-01

449

Advanced Underground Gas Storage Concepts: Refrigerated-Mined Cavern Storage, Final Report  

Energy Technology Data Exchange (ETDEWEB)

Over the past 40 years, cavern storage of LPG's, petrochemicals, such as ethylene and propylene, and other petroleum products has increased dramatically. In 1991, the Gas Processors Association (GPA) lists the total U.S. underground storage capacity for LPG's and related products of approximately 519 million barrels (82.5 million cubic meters) in 1,122 separate caverns. Of this total, 70 are hard rock caverns and the remaining 1,052 are caverns in salt deposits. However, along the eastern seaboard of the U.S. and the Pacific northwest, salt deposits are not available and therefore, storage in hard rocks is required. Limited demand and high cost has prevented the construction of hard rock caverns in this country for a number of years. The storage of natural gas in mined caverns may prove technically feasible if the geology of the targeted market area is suitable; and economically feasible if the cost and ...

1998-09-30

450

Study of particles trapped by a magnetic field  

Science.gov (United States)

A new type of radiation which occurs when particles are accelerated in the field of a longitudinal wave and in a transverse magnetic field is studied. The characteristics of such spontaneous radiation are obtained, and the influence of collective effects on the radiation is analyzed. The application of the findings to the theory of free electron lasers is discussed. 8 references.

1986-01-01

452

Risk of cancer after low doses of ionising radiation: retrospective cohort study in 15 countries  

UK PubMed Central (United Kingdom)

Objectives To provide direct estimates of risk of cancer after protracted low doses of ionising radiation and to strengthen the scientific basis of radiation protection standards for environmental,...Full Text Available

2005-07-09

453

Radiation therapy alone versus radiation therapy and chemotherapy in the management of Hodgkin's disease.  

UK PubMed Central (United Kingdom)

Forty-four patients with histologically proven Hodgkin's disease underwent initial treatment with extended-field radiation therapy. Nineteen of these patients also received combination chemotherapy....Full Text Available

1990-02-01

454

Radiation exposure due to X-rays of the hip joint in babies  

International Nuclear Information System (INIS)

Exact anatomic knowledge about the location of the gonads and the application of corresponding measures of radiation protection are the preconditions for an efficient reduction of the danger of a possible genetic damage as a result of radiation exposition during X-ray examination of the hip joint of newborns. (VJ).

455

Multiscale registration of planning CT and daily cone beam CT images for adaptive radiation therapy  

UK PubMed Central (United Kingdom)

Adaptive radiation therapy (ART) is the incorporation of daily images in the radiotherapy treatment process so that the treatment plan can be evaluated and modified to maximize the amount of radiation...Full Text Available

2009-01-01

456

Lagranzheva dinamika kollektivnykh vzaimodejstvij v potokakh diskretnykh izluchatelej. (Lagrange dynamics of collective interactions in flows of discrete radiators).  

Science.gov (United States)

Analytical method of theoretical simulation of collective hydrodynamic instabilities of intensive flows of discrete radiators, interacting with each other only through the coherent fields of their spontaneous radiation in corresponding media was suggested...

1989-01-01

457

Granite Countertops and Radiation | Radiation Protection | US EPA  

Wastenet

... Top of page Testing Radiation coming from granite countertops results from natural radioactive material in the granite. Identifying the presence and concentration of radioactive elements in granite requires expensive and sophisticated portable instruments or laboratory equipment. These instruments and equipment require proper calibration, and interpretation of ...

458

Are natural radioactive materials dangerous  

International Nuclear Information System (INIS)

The different radiation loads caused by natural and artificial radionuclides are compared in this paper. This examples will serve to illustrate that the problem of population exposure to radiation can only be solved in consideration of all components and to show which effects of the radiation from natural sources are of special importance in this connexion. (orig./AK).

1974-09-23

459

A radiator of electromagnetic waves with a combined shape of generatrices  

British Library Electronic Table of Contents (United Kingdom)

The problem of optimizing a horn radiator of electromagnetic waves for the reflection coefficient and the coefficient of transformation of the fundamental mode into higher order modes is solved. Optimization is performed by means of selecting a combined shape of the radiator generatrices.

2008-01-01

460

Using ICCD as a fast optical switch to measure harmonic super-radiation from an optical klystron in a storage ring  

International Nuclear Information System (INIS)

An optical klystron is built in the 800 MeV electron storage ring at University of Science and Technology of China for harmonic super-radiation generation. In single bunch operation mode the repetition rate of the spontaneous radiation pulses is about 4.533 MHz, and the repetition rate of the seed laser pulses is about 3 Hz, while the radiation pulse duration is 300 ps. For measuring harmonic radiation a high on/off ratio ICCD is used as an optical switch to reject spontaneous radiation pulses of high repetition rate

2001-07-01

461

The medical exposures to ionizing radiations, it is a world priority in radiation protection  

International Nuclear Information System (INIS)

The document published under A/63:46 and titled report of the scientific committee of United Nations for the study of ionizing radiations effects, gives the situation of the fifty sixth session of the committee that stood at Vienna from the 10. to 18. july 2008. In the chapter 3 of this report the writers summarize the strategic planning and the working program of the scientific committee for the period 2009-2013. They note that the committee worry about the inadequate means, particularly in personnel. The priorities for the given period will be the medical exposure of patients, the radiation levels and the effects of energy production, the exposure to natural radiation sources and the improvement of the understanding of the effects of the low doses radiation exposure. (N.C.)

462

x - NASA Technical Reports Server  

Science.gov (United States)

Mar 1, 2011 ... Radionuclide X-ray fluorescence analysis. 2: Detection of the X-ray fluorescence radiation excited by radionuclide radiation ...

463

VOLUME I11 IMISSION SYSTEM PERFORMANCE - NASA Technical Report ...  

Science.gov (United States)

Nov 8, 2010 ... Ihring Mission 11, the radiation dosimetry measurement system functioned normally and provided data on the Earth's trapped radiation belts ...

464

Treatment of persons exposed in radiation accidents or nuclear explosions. Omhaendertagande av skadade vid radiakolyckor och kaernvapenexplosioner  

Energy Technology Data Exchange (ETDEWEB)

The report gives general principles of treatment and care of casualties caused by radiation accidents or nuclear explosions.

1991-01-01

465

The importance of radiation quality for optimisation in radiology  

UK PubMed Central (United Kingdom)

Selection of the appropriate radiation quality is an important aspect of optimisation for every clinical imaging task in radiology, since it affects both image quality and patient dose. Spreadsheet...Full Text Available

467

Tachyon Cerenkov radiation  

Energy Technology Data Exchange (ETDEWEB)

By proposing the four-dimensional, reciprocity transformations the appropriate condition for superluminal electromagnetic Cerenkov radiation is obtained by introducing the hypothesis that tachyons possess vector energy and scalar momentum.

1985-09-01

468

Solar Cell Radiation Response near the Interface of Different ...  

Science.gov (United States)

... Solar Cell Radiation Respinnse Near the Interface o~f fliffprerv- ... 5 4. CALCUTl-ATED SOLAR CELL RLSPONSE FOR VARIOUS BASE MATERIALS ...

1971-11-01

469

Relationship of Optical Coating on Thermal Radiation ...  

Science.gov (United States)

drical Enclosures Using a Numerical Ray Tracing Technique. NASA. TM-I02527, 1990 . Buckley, H.: Radiation from the Interior of a Reflecting Cylinder. Philos. ...

470

References | Radiation Protection | US EPA  

Wastenet

...References | Radiation Protection | US EPA This page provides links to the reference material on EPA's Radiation Protection Web site. U.S. EPA/...OAR/ORIA/Radiation Protection Division Jump to main content. Radiation Protection Contact Us Search: All EPA This Area You are here: EPA Home ... Radiation Protection References PageName Technical Users General Public Reporters Librarians Students/Teachers PROGRAMS TOPICS REFERENCES References The Reference Section provides general material that support the ...other sections of EPA's Radiation Protection Web site. You will find links within the information to related pages throughout the Radiation Protection , EPA ...

471
472

Radiation deamination of tetracycline. [Gamma radiation  

Energy Technology Data Exchange (ETDEWEB)

The fundamental product of tetracycline hydrochlorine gamma radiolysis was separated in its solid state. From the results of spectroscopic studies it has been established that it is des-N,N-dimethylaminotetracycline.

1980-01-01

473

Radiation Damage Calculations for the FUBR and BEATRIX Irradiations of Lithium Compounds in EBR-II and FFTF  

Energy Technology Data Exchange (ETDEWEB)

Radiation Damage Calculations for the FUBR and BEATRIX Irradiations of Lithium Compunds in EBR-II and FFTF

1999-05-01

474

Onclas U9800 - NASA Technical Report Server (NTRS)  

Science.gov (United States)

the probability of its spontaneous radiation de-excitation increases. ... consider spontaneous radiation transitions. We will examine the ...

475

Numerical analysis of methane-air combustion considering radiation effect  

Energy Technology Data Exchange (ETDEWEB)

Turbulent premixed methane-air combustion in a cylindrical chamber is numerically simulated considering radiation effect. Reaction rates are considered as minimum rates between Arrhenius rates and eddy break up rates. A five step reduced mechanism is used. Turbulent modeling is done via standard k-{epsilon} model imposed by empirical inlet boundary conditions. Source terms of energy equation consist of reaction rates and radiation effects. The discrete ordinate method (DOM) is employed to solve the radiative transfer equation (RTE) and the weighted sum of gray gas model (WSGGM) is imposed to consider radiation effect of non-gray gases. The results indicate that in the case of turbulent combusting flows, the effect of radiation of gases can affect the temperature and species concentrations. The numerical results obtained considering radiation effect are closer to ...

2008-12-15

476

Numerical analysis of methane-air combustion considering radiation effect  

International Nuclear Information System (INIS)

Turbulent premixed methane-air combustion in a cylindrical chamber is numerically simulated considering radiation effect. Reaction rates are considered as minimum rates between Arrhenius rates and eddy break up rates. A five step reduced mechanism is used. Turbulent modeling is done via standard k-? model imposed by empirical inlet boundary conditions. Source terms of energy equation consist of reaction rates and radiation effects. The discrete ordinate method (DOM) is employed to solve the radiative transfer equation (RTE) and the weighted sum of gray gas model (WSGGM) is imposed to consider radiation effect of non-gray gases. The results indicate that in the case of turbulent combusting flows, the effect of radiation of gases can affect the temperature and species concentrations. The numerical results obtained considering radiation effect are closer to the ...

2008-12-01

477

Multifunctional, Boron-Foam Based Radiation Shielding  

Science.gov (United States)

PROPOSAL NUMBER: 04 B3.09-7744. SUBTOPIC TITLE: Radiation Shielding to Protect Humans. PROPOSAL TITLE: Multifunctional, Boron-Foam Based ...

478

Mathematical Analysis of Three Free-Electron-Laser Issues  

Science.gov (United States)

... iFfficiency-en- enhanced spontaneous radiation at the free-electron- ... as enhanced spontaneous radiation at the free-electron-laser wavelength. ...

1990-09-30

479

Enhanced coherent undulator radiation from bunched electron beams  

International Nuclear Information System (INIS)

When energetic bunches of electrons traverse an undulator field, they can spontaneously emit radiation both coherently and incoherently. Although it has generally been assumed that undulator radiation is incoherent at wavelengths short compared to the longitudinal size of the electron bunch, several recent observations have proved this assumption false. Furthermore, the appearance of coherent radiation is often accompanied by a significant increase in radiated power. Here we report observations of strongly enhanced coherent spontaneous radiation together with direct measurements, using transition radiation techniques, of the electron distributions responsible for the coherent emission. We also report demonstrated enhancements in the predicted spontaneous radiated power by as much as 6x10"4 using electron bunch compression. copyright 1996 ...

1995-09-28

481

ESR study in radiation damage in pyrimidines. 3-year comprehensive progress report  

International Nuclear Information System (INIS)

General mechanisms of radiation damage to biomolecules was studied by using substituted pyrimidines, particularly barbituric acid derivatives.

482

Differences in synchrotron radiation induced gas desorption from stainless steel and aluminium alloy  

CERN Document Server

Differences in synchrotron radiation induced gas desorption from stainless steel and aluminium alloy

1990-01-01

483

Combined Radiation and Thermal Injury after Nuclear Attack  

Science.gov (United States)

... Except for isolated radiation accidents over the ensuing years, little practical experience has been gained in the treatment of thermal injuries ...

2011-05-13

484

Chinese Journal of Lasers (Selected Articles)  

Science.gov (United States)

... spontaneous radiation of amplifiers within a relatively w~de range of ... pulse widths are 20-30ns, while amplified spontaneous radiation pulse ...

1991-12-10

485

An evaluation of planning techniques for stereotactic body radiation therapy in lung tumors  

UK PubMed Central (United Kingdom)

PurposeTo evaluate four planning techniques for stereotactic body radiation therapy (SBRT) in lung tumors.Methods...Full Text Available

2008-04-01

486

The influence of the binder on the properties of sintered glass-ceramics produced from industrial wastes  

Energy Technology Data Exchange (ETDEWEB)

Sintered glass-ceramics were produced from coal fly ashes, red mud from aluminum production and silica fume. The capabilities of Tuncbilek fly ash and a mixture of Orhaneli fly ash, red mud and silica fume to be vitrified and devitrified by sintering process were investigated by means of scanning electron microscopy and X-ray diffraction analysis. To determine the effect of binder in the sintering technique, glass powders were pressed without or with the addition of polyvinyl alcohol. Owing to microstructural observations, density and hardness measurements, it can be said that physical properties and the hardness of the produced samples strongly depended on the crystallization degree of the samples. Toxicity characteristic leaching procedure test results showed that glass-ceramic samples produced by using sintering technique could be considered as nonhazardous materials. Chemical durability of the sintered glass-ceramic samples was also good. ...

2009-09-15

487

Stereoscopic observations of a solar hard x-ray flare with Ulysses, PVO, GRO and Yohkoh spacecraft  

Energy Technology Data Exchange (ETDEWEB)

Hard X-ray/gamma-ray spectrometers aboard two interplanetary spacecraft, Ulysses and Pioneer Venus Orbiter (PVO), and two near-Earth spacecraft, Yohkoh and Compton Gamma Ray Observatory (GRO/BATSE), are currently in operation. A unique set of circumstances have permitted the observation of the 15 November 1991 (2238 UT) flare by all the four instruments. This intense flare (GOES class X 1.5) was associated with the bright (3B) H-alpha flare located on the disk (S13, W19) in the active region 6919. At the time of the flare, the Ulysses and PVO spacecraft were located respectively 101[degree] and 52[degree] west of the Sun-Earth line. Thus the view angles for the PVO and Ulysses instruments were quite different from those of the near-Earth instruments on GRO and Yohkoh. The preliminary photon energy spectra observed by the four instruments at different times during the flare will be presented and their implications regarding the directivity of ...

1992-01-01

488

Properties and challenges of nanolayer coatings  

Energy Technology Data Exchange (ETDEWEB)

A systematic study was made on MoSi{sub 2}-based nanolayer coatings. Alternating layers with thickness 1-20 nm were prepared by sputtering. Nitrided MoSi{sub 2} has a very high crystallization temperature, >1000 C, and MoSi{sub 2}Nx (x=3-4) can be used as a stable second phase reinforcement or diffusion barrier coatings. Mechanical properties depend strongly on phase and morphology of the layers: hardness and modulus is significantly increased in the crystallization. The nanolayers have much higher hardness but lower modulus (which project higher toughness in the nanolayers). Wear resistance is improved with decreasing layer thickness. Single phase MoSi{sub 2}Nx (x=0-4.2) has a wide range of hardness and modulus with varying N content and annealing, suggesting the possibility of engineering MoSi{sub 2}Nx to produce different material properties for different mechanical applications. Most of this paper is made up of ...

1995-12-01

489

Phase formation in selected surface-roughened plasma-nitrided 304 austenite stainless steel  

Energy Technology Data Exchange (ETDEWEB)

Direct current (DC) glow discharge plasma nitriding was carried out on three selected surface-roughened AISI 304 stainless steel samples at 833 K under 4 mbar pressures for 24 h in the presence of N{sub 2}:H{sub 2} gas mixtures of 50 : 50 ratios. After plasma nitriding, the phase formation, case depth, surface roughness, and microhardness of a plasma-nitrided layer were evaluated by glancing angle x-ray diffractogram, optical microscope, stylus profilometer, and Vickers microhardness tester techniques. The case depth, surface hardness, and phase formation variations were observed with a variation in initial surface roughness. The diffraction patterns of the plasma-nitrided samples showed the modified intensities of the {alpha} and {gamma} phases along with those of the CrN, Fe{sub 4}N, and Fe{sub 3}N phases. Hardness and case depth variations were observed with a variation in surface roughness. A maximum hardness of 1058 Hv ...

2008-04-01

490

Multilayered Nano-Microcomposite Ti-Al-N/TiN/Al_2O_3 Coatings. Their Structure and Properties  

International Nuclear Information System (INIS)

This paper presents the first results on formation and study of structure and properties of micro- and nanocomposite combined coatings. By means of modeling the deposition processes (deposition conditions, current density-discharge, plasma composition and density, voltage) we formed the three-layer nanocomposite coatings of Ti-Al-N/Ti-N/Al_2O_3. The coating composition, structure and properties were studied using physical and nuclear-physical methods. The Rutherford proton and helium ion backscattering, scanning electron microscopy with microanalysis, grazing incidence X-ray diffraction, as well as nanohardness tests (hardness) were used. Measurements of wear resistance and corrosion resistance in NaCl, HCl and H_2SO_4 solutions were also performed. For testing mechanical properties such characteristics of layered structures as hardness H, elastic modulus E: H"3/E"2 etc. were measured. It is demonstrated that the formed three-layer ...

2011-07-01

491

Indentation plastic displacement field: Part II. The case of hard films on soft substrates  

Energy Technology Data Exchange (ETDEWEB)

The plastic displacements around Knoop indentations made in hard titanium/aluminum multilayered films on soft aluminum alloy substrates have been studied. Indentations were cross-sectioned and imaged using the focused-ion-beam (FIB) milling and high-resolution scanning electron microscopy (SEM), respectively. The FIB milling method has the advantage of removing material in a localized region without producing mechanical damage to the specimen. The micrographs of the cross-sectioned indentations indicate that most of the plastic deformation around the indentation is dominated by the soft aluminum substrate. There is a very small change in the multilayered film thickness around the indentation{emdash}less than 10{percent}. The plastic deformation of the thin film resembles a membrane being deflected by a localized pressure gradient across the membrane. Stress-induced voids are also observed in the multilayered film, especially in the area around the indentation apex. ...

1999-06-01

492

Indentation modulus and hardness in heteroepitaxial Al{sub x}Ga{sub 1{minus}x}P films  

Energy Technology Data Exchange (ETDEWEB)

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear interpolation.

1997-05-01

493

Effects of composition and temperature on irradiation hardening of pressure vessel steels  

International Nuclear Information System (INIS)

The effects of key metallurgical variables on the low fluence hardening in a set of A533B model steels were evaluated over a wide range of irradiation temperatures. Above about 163 degrees C hardening increased with higher copper and nickel contents, as is typical of the pressure vessel operating regime around 290 degrees C. However, at 121 degrees C the hardening was generally lower and unaffected by copper and nickel variations. This observation of decreased hardening with lower temperature (e.g. an open-quotes invertedclose quotes temperature dependence) is tentatively attributed to a reduced contribution of copper precipitation. Tensile data for a set of commercial steels with a range of (uncontrolled) compositions also showed minimal sensitivity to copper variations at 121 degrees C. Unlike the hardness data no systematic reductions in the yield stress increases were observed between 163 and 121 degrees C. However, the ultimate tensile strength did decrease at ...

1991-08-25

494

Effects of DC plasma nitriding parameters on microstructure and properties of 304L stainless steel  

International Nuclear Information System (INIS)

A wear-resistant nitrided layer was formed on a 304L austenitic stainless steel substrate by DC plasma nitriding. Effects of DC plasma nitriding parameters on the structural phases, micro-hardness and dry-sliding wear behavior of the nitrided layer were investigated by optical microscopy, X-ray diffraction, scanning electron microscopy, micro-hardness testing and ring-on-block wear testing. The results show that the highest surface hardness over a case depth of about 10 #mu#m is obtained after nitriding at 460 deg. C. XRD indicated a single expanded austenite phase and a single CrN nitride phase were formed at 350 deg. C and 480 deg. C, respectively. In addition, the S-phase layers formed on the samples provided the best dry-sliding wear resistance under the ring-on-block contact configuration test.

2009-03-01

495

Development of a new wear-resistant material: TiC/TiNi composite  

Energy Technology Data Exchange (ETDEWEB)

In this work, an attempt was made to develop a novel type of wear-resistant composite employing a TiNi alloy matrix reinforced by hard particles. Titanium carbide was chosen as the reinforcing phase because of its high hardness and TiNi alloy as the matrix due to its pseudoelasticity and good toughness. TiC particles may sustain external load, while the TiNi matrix may accommodate deformation, absorb impact energy and retain the hard particles. Such a combination is expected to lead to an enhanced wear resistance, compared to TiNi alloy. As a matter of fact, some efforts were previously made to develop TiNi-matrix composite reinforced by ceramic particles. However, the emphasis of those studies was put on effects of the reinforcing particles on the phase transformation behavior, shape memory effect and some mechanical properties of the composite; no attempt was made to explore the potential benefit of the material for wear ...

1999-10-22

496

Properties and performance of new metastable Ti-B-C-N hard coatings prepared by magnetron sputtering  

Energy Technology Data Exchange (ETDEWEB)

Thin films of new metastable materials from the system Ti-B-C-N were deposited on metallic substrates by d.c. magnetron sputtering in different Ar+N{sub 2} atmospheres. The multiphase compound targets used were based on various compositions on the TiC-TiB{sub 2} and TiB{sub 2}-C tie lines of the Ti-B-C phase diagram. The structure and chemical composition of the films were characterized by electron microprobe analysis, depth profiling Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy. The hardness, critical load of failure and the tribological behavior of the coatings were investigated. Superhard single-phase crystalline metastable Ti-B-C-N layers with hardness values exceeding 5000 HV{sub 0.05} and extremely low sliding wear against 100Cr6 and Al{sub 2}O{sub 3} counterparts could be produced by reactive sputtering of various TiC-TiB{sub 2} targets in Ar+N{sub 2} atmospheres with low nitrogen flows. In the case ...

1995-10-01

497

Influence of tempering on microstructure and hardness of high-temperature 9%Cr-steels; Einfluss des Anlassens auf Gefuege und Haerte warmfester 9%Cr-Staehle  

Energy Technology Data Exchange (ETDEWEB)

The influences of temperature and duration of tempering on hardness and microstructure were investigated at high-temperature martensitic and low-carbon steels with 9% chrome and the further alloying elements molybdenium, vanadium, niobium and partially tungsten. After austenitizing and subsequent air cooling the steels were tempered at temperatures below, at and above Ac{sub 1b} for different times and finally a hardness test was performed. Making use of the temperature dependence of the hardness tempering diagrams were constructed and the Hollomon-Jaffe-Parameter on the three steels was determined within its application limits. Micrographs of the structure shows the formation of the carbides and the martensite. At tempering temperatures below Ac{sub 1b} a decrease of hardness occurs, above Ac{sub 1b}, a hardness rise due to the partial austenitizing was obtained. While hardening ...

1999-06-01