radiation hard semiconductor: Topics by WorldWideScience.org

Radiation hardening of semiconductor parts

Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect ...

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Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

This chapter is an overview of total-ionizing-dose and single-event hardening techniques and should be used as a guide to a range of research publications. It should be stressed that there is no clear and simple route to a radiation-tolerant silicon integrated circuit. What works for one fabrication process may not work for another, and there are many complex interactions within individual processes and designs. The authors have attempted to highlight the most important factors and those process changes which should bring improved hardness. The main point is that radiation-hardening as a procedure must be approached in a methodical fashion and with a good understanding of the response mechanisms involved.

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Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

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British Library Electronic Table of Contents (United Kingdom)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

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NASA's Real World: The Light Plants Need - NASA

Hard Corrosion and Radiation-Resistant Coatings

light-emitting diode A light-emitting diode, or LED, is a semi-conductor light source that emits visible light or invisible infrared radiation. Semi-conductors ...

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International Science & Technology Center (ISTC)

Hard Nano-Strutural Coatings Resistant to the Extreme Conditions of Chemical, Abrasive and High Energy Media for Thermonuclear Power, Oil and Gas and Chemical Industries

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Modelling the electrochemical and catalytic processes on semiconductors: laser radiation effect

Dose dependence of semiconductor material conductivity as a means of high fluence dosimetry

2009 p. 77-78 Ukraine Lepikh, Ya.I. Fedchuk, AP Odesa National University,

2009-09-15

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Beam-induced damage on diffractive hard X-ray optics

Dose dependences of conductivity at a temperature of 78 K for InSb and InAs single crystals under reactor fast neutron, 50 MeV proton and 80 MeV alpha particle irradiation up to fluence of 10{sup 17} cm{sup -2} are considered. Special attention is given to non-trivial, but little known semi-conductor characteristics in terms of {sigma}(F) dependence at large fluences, and also to the versatility of such dependence for all semiconductors. The behaviour of semiconductor materials conductivity dependence on fluence presented here may be used for semiconductor dosemeters characterisitic variation forecasting under large fluence measurements and in radiation emergency dosimetry. (author).

1996-12-31

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Equipment hardening and hardness assurance

The issue of beam-induced damage on diffractive hard X-ray optics is addressed. For this purpose a systematic study on the radiation damage induced by a high-power X-ray beam is carried out in both...Full Text Available

2010-11-01

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Semiconductor Radiation Detectors with Frisch Collars and Collimators for Gamma Ray Spectroscopy and Imaging

The introduction of tolerance to radiation (''radiation-hardness'') into large electronic systems is one of the major tasks to which this Handbook will be put. The practices recommended here for inculcating radiation-tolerance in equipment require advanced physical modeling techniques, precise engineering procedures, and firm assurance procedures. The degree to which these procedures should be used in an equipment project can be measured by the severity of the raw radiation environment, the desired reliability of the system, and the requirement of that project for radiation-sensitive technologies. The balance of device/circuit design versus shielding will depend on whether the radiation is highly penetrating -- as in isotope handling or military environments -- or readily attenuated, as in space. In this chapter the authors have attempted to summarize the ...

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Light amplifier with filtering of spontaneous background

To study CdZnTe as a high energy resolution gamma ray detector with a novel new design, and to build a detector array from the new detector design

2006-12-04

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X-ray dosimetry of TlGaSe_2 single crystals

A comparitive analysis is made of the principal characteristics of narrow-band and conventional semiconductor light amplifiers. It is shown that quasi-distributed filtering of the spontaneous radiation ensures a high gain and a low level of the spontaneous noise at the amplifier output.

1980-06-01

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Investigation of the radiological safety concerns and medical history of the late Joseph T. Harding, former employee of the Paducah Gaseous Diffusion Plant

TlGaSe_2 compound belongs to group of layered semiconductors of A"3B"3C_2"6-type. Photoelectric and optical properties of TlGaSe_2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe_2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe_2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K_#sigma# ...

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New Radiation Stable and Long-Lived Plastic Scintillators

An ex-employee's claims that inadequate enforcement of radiation safety regulations allowed excess radiation exposure thereby causing his deteriorating health was not substantiated by a thorough investigation.

1981-03-01

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Theoretical considerations for SRAM total-dose hardening

A study of the influence of the concentration of secondary addition, high concentrations of primary dopant, diffusion enhancer and stabilizer on radiation hardness is presented. It is concluded that the diffusion enhancing technique is the most powerful method for improving radiation hardness. A new polystyrene scintillator which contains 2% pT, 0.02% POPOP, 20% diffusion enhancer and 0.02% stabilizer gave 91% of initial light output immediately after 3 Mrad irradiation in air. Data are presented that show that scintillator prepared from commercial polymer is more radiation-hard and has greater light output than scintillator prepared from monomer. It is assumed that this difference is due to different molecular weight distributions. Some protocols for acceleration of aging (yellowing and crazing) are presented. It is shown that one of the main reasons for aging of plastic ...

1993-11-15

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Generation of microwaves and hard X-rays in a flash X-ray tube

The theoretical hardness against total dose of the six-transistor SRAM cell is investigated in detail. An explicit analytical expression of the maximum tolerable threshold voltage shift is derived for two cross-coupled inverters. A numerical method is used to explore the hardness of the read and write operations. Both N- and P-channel access transistors designs are considered and their respective advantages are compared. The study points out that the radiation hardness mainly relies on the technology. Results obtained with the very robust Gate-All-Around process are finally presented.

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Recent Progress in CdTe and CdZnTe Detectors

High interelectrode voltage peaks have been observed simultaneously with the emission of hard X-ray bursts from a flash X-ray tube. The magnitude of the voltage peaks may exceed twice the initial charging voltage. It has also been observed that the discharge emits bursts of X-and P-band microwaves radiation which are coincident with the emission of the hard X-ray bursts. The results indicate that the microwaves and X-rays have a common origin in discharge plasma movements and an acceleration model for electrons in the plasma is presented as one possible explanation of the observed phenomena.

1982-01-01

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Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and (2) technique for improving energy resolution and photopeak efficiencies. Applications of these ...

2001-01-01

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Radiation effects on MOS devices and radiation-hard CMOS technologies

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an ...

2001-01-01

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Theory of multifoil collision supercompression

Total-dose irradiation seriously damages MOS devices and their circuit performance. Threshold voltage shifts, transconductance degradation and increase in off-state leakage current are generally observed for irradiated devices. These instabilities are essentially due to positive and/or negative charge trapping in SiO_2 and interface trap generation at the SiO_2/Si interface. Radiation hardening of CMOS VLSIs is to eliminate these trapping effects, and for this purpose, special considerations for fabrication processes and layout design are necessary. In this paper, basic mechanisms for radiation-induced charge trapping and related effects on MOS devices are reviewed. Also discussed are radiation-hardening technologies from both fabrication-process and layout-design viewpoints. Using these technologies, 1 #mu#m radiation-hard CMOS gate arrays have been successfully developed. Experimental data taken for ...

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Radiation hardening of optical fiber links by photobleaching with light of shorter wavelength

Investigations of superdense compression touch on such problems as ultrahigh-frequency oscillations of matter in the generation of gravitational waves, the powerful pumping of hard coherent radiation, and the laboratory simulation of stellar interiors. This paper reviews the theory of supercompression and discusses some experiments involving multifoil collision supercompression.

1980-01-01

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Near-Core and In-Core Neutron Radiation Monitors for Real Time Neutron Flux Monitoring and Reactor Power Level Measurements

The influence of additionally injected short-wavelength photobleaching light on the radiation hardness of Ge-doped graded index fibers working at 1,300 nm wavelength is investigated. Predictions are complicated by the fact that more efficient shortwave bleaching light experiences higher radiation-induced loss. Promising results are found for low fiber temperatures (approx-lt -50 C) and bleaching light of about 835 nm wavelength.

1995-09-18

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Radiation hardness of plastic scintillating fiber

MPFDs are a new class of detectors that utilize properties from existing radiation detector designs. A majority of these characteristics come from fission chamber designs. These include radiation hardness, gamma-ray background insensitivity, and large signal output.

2006-06-12

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Measurement of cumulative and independent yields of products from fission of sup(242m)Am induced by thermal neutrons

We report on measurements of radiation hardness of the plastic scintillating fiber SCSF-81. Fibers were irradiated with "6"0Co #gamma#-rays and fast neutrons up to 105 Gy and up to 5 x 1013 n/cm"2, respectively. Deterioration of the attenuation length of the scintillating fiber was studied. Some significant deterioration was observed at the integrated dose of about 1 x 103 Gy and at the integrated neutron flux (neutron fluence) of about 1 x 1012 n/cm"2 for #gamma#-ray and neutron irradiation, respectively. (author).

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Sensitization and radiation hardening of the photostimulable X-ray storage phosphor CsBr:Eu2+

Mass and charge distributions of products from fission of sup(242m)Am induced by thermal neutrons have been investigated by means of the semiconductor spectrometry of ..gamma.. radiation from a mixture of non-separated fragment nuclei. Specimens of the fissible material have been irradiated in the vertical experimental channel of the research reactor then the measurements have been performed with calibrated semiconductor detectors. Three experiments with substantially different irradiation times have been performed to expand the nomenclature of the investigated fission products. The spectra of ..gamma.. radiation from the mixture of fission products, and time dependences of the counting rates at the total absorption peaks have been handled with computers. The obtained yields are compared with data of previous investigations performed with different experimental methods, as well as with the calculated ...

1985-03-01

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British Library Electronic Table of Contents (United Kingdom)

The X-ray storage phosphor CsBr:Eu2+ in form of needle image plates is believed to be a promising alternative to the granular BaFBr:Eu2+ with regard to PSL yield and spatial resolution. Unfortunately, CsBr:Eu2+ exhibits poor radiation hardness, which is caused by a migration of europium ions initiated by naturally existing defect centers like (Eu2+-VCs)-centers and X-ray generated MEu-centers. It will be shown that the formation of (Eu2+-O2?)-dipoles at the expense of (Eu2+-VCs)-dipoles, incorporated by thermal annealing in O2-containing and humid atmosphere, does not improve the radiation stability. There is, however, a strong improvement in the radiation hardness by codoping of CsBr:Eu2+ with lithium ions, which is accompanied by a complete suppression of the previously observed MEu-cent...

2009-01-01

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Estimation of X-rays dose in the crystals of final thickness

HARDNESS MEASURING INSTUMENT, HARDNESS MEASURING DEVICE, AND HARDNESS EVALUATION METHOD

A calculation method of the X-ray radiation dose (energy of gamma- radiation remains in the range of energies where the mechanism of photoelectric absorption is the prevailing one) absorbed in the absorbers of final thickness is suggested. Calculations of resorption of secondary radiation (characteristic fluorescences) in the substance and kinetic energy of photoelectrons caused by this resorption (it would be enough to consider one or two hard series) are presented. Calculation of the spectrum of photoelectron energy yield in TeInSe_2 monocrystal for 0.1-0.5 A range of X-ray radiation is conducted by the developed methods.

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J-STORE (Japan)

Full Text Available

2007-03-02

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Effect of radiation dose on the properties of natural rubber nanocomposite

Theory of bistability in the face-pumped laser with bimolecular recombination

Effect of radiation dose and carbon nanotubes (CNT) on the mechanical properties of standard Malaysian rubber (SMR) was investigated in this study. SMR nanocomposites containing 1-7 phr CNT were prepared using the solvent casting method and the nanocomposites were radiated at doses of 50-200 kGy. The change in mechanical properties, especially, tensile strength (Ts), elongation at break (Eb), hardness and tensile modulus at 100% elongation (M{sub 100}) were studied as a function of radiation dose. The structure and morphology of reinforced natural rubber was investigated by FESEM, TEM and AFM in order to gain further evidence on the radiation-induced crosslinking. It was found that the Ts, M{sub 100} and the hardness of the SMR/CNT nanocomposites significantly increased with radiation dose; the elongation at break exhibited an increase up to ...

2010-12-15

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Final Report: Planetary Instrument Definition and Design Program (PIDDP) Support Project

Steady-state and transient behavior of the longitudinally pumped semiconductor laser is theoretically investigated by using a rate-equation model with distributed gain and photon density. Conditions necessary for bistable operation are derived. Dependencies of such major switching characteristics as turn-on and turn-off powers, delay, and rise times on laser parameters are examined. Influences of spontaneous radiation, impurities, and Auger recombination are studied. The results offer an explanation for the observed nonlinear behavior of face-pumped lasers.

1987-01-01

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Radiation hardening of a high voltage IC technology (BCDMOS)

The results of Sandia National Laboratories' participation in the NASA Planetary Definition and Design Program are summarized. Areas reported include the characterization of large area cadmium zinc telluride spectrometers and the application of simulation techniques to the prediction of device performance. Also investigated was the response of mercuric iodide devices in the region from 1 to 100 KeV. A literature study to determine the status or radiation damage measurements in room temperature semiconductor devices is also reported.

1999-03-01

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Effect of rapid thermal annealing on radiation hardening of MOS devices

A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.

1990-07-16

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Simulation approaches for nano-scale semiconductor devices

The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected, data are in good agreement with a recently developed model of oxygen out-diffusion; (ii) the location across the wafer with a radial dependence, results could be related to stress induced by thermal gradient.

1995-07-17

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Correlation between tensile property and micro-hardness in reduced activation ferritic/martensitic steel irradiated at 573 K

Simulation approaches for nano-scale semiconductor devices

2004-01-01

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Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates

Full text of publication follows: Radiation hardening and embrittlement due to high-energy neutron radiation around 623 K are the important issues on reduced-activation ferritic/martensitic (RAF/M) steels. It is expected that the improvement of radiation hardening might be one of effective ways to control the mechanical properties of RAF/M after irradiation. It has been reported that the weld joint has less hardening than the base metal from the tensile test results of TIG weldments irradiated in HFIR. This report indicated that radiation hardening can be reduced by the optimization of heat treatment condition for F82H. The purposes of this study are to establish the condition of heat treatment for minimum of radiation hardening in F82H steel using Neutron/Ion-irradiation and to examine a correlation between tensile property and micro-hardness before/after ...

2007-12-10

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3. Physical foundations and methodology of radionuclide X-ray fluorescence analysis

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In ...

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Basic mechanisms of radiation effects in the natural space radiation environment

The physical foundations are described of radionuclide X-ray fluorescence analysis (RXFA) and the table shows the values of K- and L-absorption thresholds and the K- and L-line energies of elements. The calculation of the intensity of characteristic radiation during RXFA proceeds from relations derived for conventional X-ray fluorescence analysis. The choice of the radionuclide source is ruled by the nature of the analysed substance and the used detection technique. The diagram shows the areas of radionuclide sources and the energy of the fluorescence radiation of elements. The table shows the spectra of radionuclide sources suitable for the purposes of RXFA measured by semiconductor Si(Li) and Ge(Li) detectors. (ES).

1983-12-01

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Measurement of cumulative and independent yields of fission products from thermal-neutron fission of /sup 242//sup m/ Am

Four general topics are covered in respect to the natural space radiation environment: (1) particles trapped by the earth`s magnetic field, (2) cosmic rays, (3) radiation environment inside a spacecraft, (4) laboratory radiation sources. The interaction of radiation with materials is described by ionization effects and displacement effects. Total-dose effects on MOS devices is discussed with respect to: measurement techniques, electron-hole yield, hole transport, oxide traps, interface traps, border traps, device properties, case studies and special concerns for commercial devices. Other device types considered for total-dose effects are SOI devices and nitrided oxide devices. Lastly, single event phenomena are discussed with respect to charge collection mechanisms and hard errors. (GHH)

1994-06-01

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Instruments for X-ray fluorescence analysis and spectrometry

The mass and charge distributions in an unseparated mix of fission product nuclei from thermal-neutron fission of /sup 242m/Am were studied through semiconductor gamma-ray spectrometry. Samples of the fissionable material under study were irradiated in a vertical irradiation tube of the MIFI IRT research reactor. Following irradiation, measurements were made on aperture-calibrated semiconductor detectors. For broader identification of fission fragment nuclides three experiments were conducted that differed substantially in irradiation duration. The spectrum of gamma radiation from the mix of fission products and the time dependences of count rate at total absorption peaks were analyzed on SM-4 and Iskra-226 computers. The values of yields obtained were compared with data of investigations conducted earlier with other experimental methods, and also with the results of calculations.

1985-03-01

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A phenomenological model for the macroscopic characteristics of irradiated silicon

The radionuclide X-ray fluorescence analyzer consists of a source changer and a sample changer. "5"5Fe, "1"0"9Cd and "2"4"1Am are used as excitation sources. The radiation is detected with a semiconductor Si(Li) detector. The complete assembly of the apparatus consists of an imagine unit, a keyboard, a floppy disc drive, a printer, a console and a rack with analog and digital electronics. Its multichannel amplitude analyzer consists of power supplies, a high voltage supply, a linear amplifier, an analog-to-digital converter and a computer. The technical specifications are given. The control and data processing system is controlled with an MHB 8080A microprocessor. Software for semiconductor gamma spectrometry and for quantitative gamma spectrometry will be supplied with the equipment. (E.S.). 3 figs., 4 refs.

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Radiation hardness of plastic scintillating fiber against fast neutron and #gamma#-ray irradiation

The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.

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Coated semiconductor devices for neutron detection

In future collider experiments, where a background radiation level is estimated to be very high, e.g. around 10"2 #approx# 10"5 Gy/yr and 10"1"1 #approx# 10"1"4 n/cm"2/yr at SSC, the detectors operating around the collision point in the experiments will encounter a considerable amount of radiation. Therefore, the detectors, especially the calorimeter, are required to be resistive against high radiation levels. From this point of view, it is of great importance to study the effects of radiation damage on the performance of the detectors. The authors report preliminary results of measurements of radiation hardness of the plastic scintillating fiber Kuraray SCSF-81 against irradiation with fast neutrons and "6"0Co #gamma#-rays in the region of the neutron fluence from 1 x 10"1"1 to 5 x 10"1"3 n/cm"2 and the integrated #gamma#-ray dose from 890 to 10"5 Gy, ...

1992-10-25

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Aging and compatbility of TNF-doped mylar

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and ...

2002-01-01

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Radiation hardening of CMOS-based circuitry in SMART transmitters

TNF-doped Mylar is a new radiation-hard dielectric that has recently been qualified as a viable substitute for Mylar in capacitors. The advantage of TNF-doped Mylar is that it satisfies both the nuclear safety and radiation hardness requirements of weapons. Mylar is not radiation-hard. Aging and compatibility studies were carried out to insure that (1) TNF does not diffuse from the film during fabrication of the capacitor or during storage; and (2) there are no compatibility problems with aluminum foil (the conductor) or Fluorinert (the secondary dielectric). Losses of TNF were barely detectable during the vacuum bakes used in fabricating capacitors or during accelerated aging tests carried out below T{sub g} (70C) over a two year period in air. In other accelerated tests, no compatibility problems were detected with aluminum or Fluorinert. TNF-doped Mylar is now being used in the MC-4109 capacitor that ...

1990-01-01

45

Conceptual design of a low-temperature radiation-hard tracker detector

Process control transmitters that incorporate digital signal processing could be used advantageously in nuclear power plants; however, because such transmitters are too sensitive to radiation, they are not used. The Electric Power Research Institute sponsored work at Sandia National Laboratories under EPRI contract RP2614-58 to determine why SMART transmitters fail when exposed to radiation and to design and demonstrate SMART transmitter circuits that could tolerate radiation. The term ''SMART'' denotes transmitters that contain digital logic. Tests showed that transmitter failure was caused by failure of the complementary metal oxide semiconductors (CMOS)-integrated circuits which are used extensively in commercial transmitters. Radiation-hardened replacements were not available for the radiation-sensitive CMOS circuits. A conceptual design showed that a ...

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Radiation technology, radiation technics and technological dosimetry in the Institute of Isotopes of the Hungarian Academy of Sciences. 1966-1981

Silicon sensors have about ten times improved radiation hardness around 130 K temperature, compared with the state-of-art sensors close to room temperature. This is based on the Lazarus effect studied by the RD39 Collaboration of CERN. Other benefits of low temperatures will also be discussed. We shall describe the conceptual design of low-mass detector modules cooled using two-phase flow of argon in miniature cooling pipes integrated in the module structure between the sensors and the readout hybrid circuit. The main engineering features of the cooling system and mechanical support structures are discussed, as well as the benefits arising from the operation of the tracker under cryogenic vacuum. 4 Refs.

2003-01-01

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The effects of cosmic radiation on implantable medical devices

Pilot-plant irradiation began in Hungary in 1969 with the construction of a high-activity multi-purpose /sup 60/Co facility. Technologies for radiation sterilization, food handling, plastics irradiation as well as chemical dosimetry, semiconductor instrumental dosimetry, computer-based construction and control methods have been developed. Our chlorobenzene dose-meter system is used in Hungary and abroad; as a result of an IAEA-organized dosimetric intercomparison the system was adopted as a reference system. The institute has developed into a basic institute for the reconstruction and re-load of old ..gamma..-facilities as well as it serves for the planning, construction and launching of new ones in Hungary.

1982-01-01

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The Destruction Effects of Semiconductors by High Power Electromagnetic Wave

Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset ...

1996-12-31

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Radiation Protection Aspects of the Linac Coherent Light Source Front End

Full Text Available

2007-09-01

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Nanostructure of Si-Ge near-surface layers produced by ion implantation and laser annealing

The Front End Enclosure (FEE) of the Linac Coherent Light Source (LCLS) is a shielding housing located between the electron dump area and the first experimental hutch. The upstream part of the FEE hosts the commissioning diagnostics for the FEL beam. In the downstream part of the FEE, two sets of grazing incidence mirror and several collimators are used to direct the beam to one of the experimental stations and reduce the bremsstrahlung background and the hard component of the spontaneous radiation spectrum. This paper addresses the beam loss assumptions and radiation sources entering the FEE used for the design of the FEE shielding using the Monte-Carlo code FLUKA. The beam containment system prevents abnormal levels of radiations inside the FEE and ensures that the beam remains in its intended path is also described.

2010-08-26

51

Multielement analysis of air samples

An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)

2001-09-23

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EXAFS Study of Semimetal-Semiconductor Transition of Bismuth Clusters

Radionuclide X-ray fluorescence analysis for nondestructive determination of Fe, Zn, Pb, and Br in air samples collected on nitrocellulose membrane filter Synpor 4 is described. A "2"3"8Pu source for the excitation and a semiconductor Si/Li detector for the detection of characteristic and L-fluorescent radiation of the above elements were used. A correction method based upon the measurements of simple or multiple Compton scattering for compensation of varying mass per unit area values in sample deposits was theoretically proposed and experimentally tested. The results obtained both with and without the correction were compared and good agreement with those given by atomic absorption spectrometry was observed. (author).

1981-01-01

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Development of thin foil Faraday collector as a lost alpha particle diagnostic for high yield D-T tokamak fusion plasmas

Extended X-ray absorption fine structure (EXAFS) measurements of bismuth clusters in the temperature range of 23 -300 K have been performed using synchrotron radiation in order to investigate the size dependent phase transition. The inter-atomic distances around 3.0 A and 3.6 A are attributed to the nearest neighbors within the layer and between layers, respectively. EXAFS functions were analysed by the curve fitting method within a symmetric distribution approximation. The nearest neighbor distance of the 0.5 nm thick films is shorter than that of the 300 nm thick films at all the temperatures, which is related to the reduction of the inter-layer correlation.

2007-02-02

54

Wideband Modulation and Tuning of Semiconductor Lasers ...

Alpha particle confinement is necessary for ignition of a D-T tokamak fusion plasma and for first wall protection. Due to high radiation backgrounds and temperatures, scintillators and semiconductor detectors may not be used to study alpha particles which are lost to the first wall during the D-T programs on JET and ITER. An alternative method of charged particle spectrometry capable of operation in these harsh environments, is proposed: it consists of thin foils of electrically isolated conductors with the flux of alpha particles determined by the positive current flowing from the foils. 2 refs., 3 figs.

1994-07-01

55

A NEW FORM OF SOLID STATE SOLAR GENERATOR

... Tunable semiconductor lasers are essential components for links employing optical frequency modulation (OFM) for enhanced dynamic range or ...

1996-07-01

56

Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

... nent to the design and construction of metal-semiconductor solar cells, in that both the photovoltage and the efficiency of metal-semiconductor cells ...

1962-01-01

57

Wood-plastic composites using woods native to Iran

The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the ...

1995-11-01

58

Preparation of polyester/gypsum/composite using gamma radiation, and its radiation stability

Radiation induced polymerization of methylmethacrylate and copolymerization of styrene-acrylonitrile mixture in mamrase Carpinus betulus was carried out by means of #gamma#-ray, under different moisture levels and additives. Under all conditions the degree of polymerization was as high as 60%. No pronounced differences were observed in the kinetics of the polymerization of MMA either with moisture content of wood nor with kind and amount of additives. At high moisture (80% RH) content the dimensional stability of wood-PMMA was increased four fold as compared with untreated wood. The hardness increased about 100% for a weight conversion of monomer of about 30 to 40%. Hardness of this wood-polymer composite is comparable to that of the best noble woods in the world. (author).

1978-10-26

59

Radiation processed composite materials of wood and elastic polyester resins

Composites based on pure gypsum and polyester-styrene resin have been prepared using various doses of gamma radiation. Some physical properties of the prepared composites and the influence of irradiation dose on it have been studied as: compression strength, hardness, thermal decomposition temperature in nitrogen or oxygen, and the change in weight in aqueous solutions with different pH values. The glass transition temperature of the pure polymer and the composites increases with increasing the irradiation dose up to a plateau, and the glass transition temperature of the pure polymer is lower than that of the composites. The irradiation dose does not seem to affect the decomposition temperature of the pure polymer or the composites significantly and the decomposition temperature in presence of nitrogen is higher than that in presence of oxygen. Increasing the irradiation dose leads to an enhancement of the compression strength of the pure ...

2005-06-01

60

Detection of irradiated chicken by ESR spectroscopy of bone

The radiation polymerization of multifunctional unsaturated polyester-monomer mixtures in wood forms interpenetrating network system. The mechanical resistance (compression, abrasion, hardness, etc.) of these composite materials are generally well over the original wood, however the impact strength is almost the same or even reduced, in comparison to the wood itself. An attempt is made using elastic polyester resins to produced wood-polyester composite materials with improved modulus of elasticity and impact properties. For the impregnation of European beech wood two types of elastic unsaturated polyester resins were used. The exothermic effect of radiation copolymerization of these resins in wood has been measured and the dose rate effects as well as hardening dose was determined. Felxural strength and impact properties were examined. Elastic unsaturated polyester resins improved the impact strength of wood composite ...

1982-09-19

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

61

Environmental hardening of a mobile-manipulator system for nuclear environments

Ionizing radiation has been used to treat poultry to remove harmful microorganisms, mainly Salmonella, which contaminates chicken, goose and other fresh and frozen poultry. This microorganism is sensitive to low dose radiation. Thus, irradiating these foods with doses between 1 to 7 kGy results in a large reduction of bacteria. Since it is necessary to determine whether irradiation has occurred and to what extend, this work studied the signal produced by ionizing radiation within the hard crystalline matrix of chicken`s bone to establish a control method. Chicken`s drumsticks were irradiated and bones separated from flesh were lyophilized and milled. ESR spectrum was then obtained. The ESR signal increased linearly with dose over the range 0.25 to 8.0 kGy. Free radicals evaluated during 30 days after irradiation showed stable in this period. (Author).

1995-10-01

62

Production of wood plastic properties using gamma radiation as a polimerization agent

This research report discusses the radiation hardening of a commercially available mobile robot, the REMOTEC ANDROS. This hardening effort is culminating in the availability of a megarad hardened mobile platform to access areas in nuclear facilities with extremely high levels of radiation (0.1 to 1 Mrad). These radiation levels may be encountered both during routine repair and monitoring activities and accident situations. The project has completed a phase-I U.S. Department of Energy Small Business Innovative Research contract and is now in a phase-II effort with completion scheduled in early 1995. The research involves the evaluation of the material and electrical components of an ANDROS robot to determine the anticipated radiation hardness of the current production version and evaluation of the components that must be replaced or modified to harden the system to higher ...

1993-11-14

63

Radiation-hardening of magnet coils

The properties of wood plastic composites (WPC) based on Pinus Radiata D. Don impregnated with methylmethacrylate and subsequently polymerized with gamma radiation were studied. Different systems of impregnation were utilized, in order to obtain partial and shell loads. The minimum irradiation dose uses was 16 kGy. The following tests were made to the material: static bending, compression strenght parallel to grain, hardness, sheer strength, toughness, water absorption, dimensional stability and flame propagation index. To evaluate the testing, the results of the samples were separated according final density in the ranges: R_1 = 429-483 kg/m3 (without treatment); R_2 = 500-650 kg/m3 and R3 = 651-850 kg/m3. In general, the best results were obtained for samples of high density. The most important results were achieved for dimensional stability, water absorption and hardness. (Author).

1984-01-01

64

Wood-polymer composites obtained by gamma radiation

The first essential before embarking on the radiation-hardening of electrical insulation - mostly magnet coils - in any beam line application is to obtain a reliable estimate of the dose to the components. These are examples ( switchyards at SLAC and LAMPF) where the degree of hardness specified was much higher than was required. Although experience shows that the cost premium for substantial radiation - hardening is of the order of 10%, it has also become clear that well - designed beam line have negligible losses: hardening is required only in the vicinity of targets, collimators or other beam - intercepting devices. Where the beam is deliberately scraped, local shielding will minimize the associated radiation in the surroundings. Electron machines have their own special problems due to synchrotron radiation, so certainly coils and other electrical equipment should be kept away ...

1989-03-01

65

Neutron irradiation effect on mechanical properties of metals after preliminary hardening

It has been prepared composites materials by means of monomer penetration in pores of wood samples and later curing by means of gamma irradiation. The studied species were Hura crepitans L. (catahua), Aniba puchury-minor (C. Martinez) (mohena amarilla), and Calycophyllum spruceanum (Benth.) (capirona). These new materials exhibit smaller water absorption and better mechanical properties in comparison with native wood. The test tubes of catahua treated with the styrene-polyester mixture absorb only up to 10% humidity compared to the native species whereas its hardness is increased in a 100%. (author).

2006-01-01

66

Measurements of K-shell x-ray production cross sections and K to L and M-shell radiative vacancy transfer probabilities for Nd, Eu, Gd, Dy and Ho at excitation with 59.5 keV photons in an external magnetic field

Some results on mechanical property study of copper and titanium subjected to impact load and next to neutron irradiation are presented. It was shown that shock wave influence involves a substantial shape change of the stress-strain diagram and of respective mechanical characteristics. Yield- and ultimate strength were substantially increased, as well as hardness with a considerable drop of plasticity. Also a heat stability of copper and titanium specimens was studied after being treated with shock-waves and neutron radiation. Results are given of electron microscope study of titanium structure sfter explosion hardening, which caused decomposition of hydride segregations in titanium and increased dislocation density.

67

Triple ion-beam studies of radiation damage effects in a 316LN austenitic alloy for a high power spallation neutron source

The effect of the #+-# 0.75 T external magnetic field on the K_#alpha#_1, K_#alpha#_2, K_#beta#_'_1 and K_#beta#_'_2 x-ray production cross sections and radiative vacancy transfer probabilities from K-shell to L2 and L3 subshells and M-shell for ferromagnetic Nd, Gd and Dy and paramagnetic Eu and Ho have been investigated, using the 59.5 keV incident photons. K-shell fluorescence yields and K x-ray intensity ratios for these elements have been determined in the external magnetic field also. The K x-rays from different targets were detected using a high-resolution Si(Li) semiconductor detector. For B = 0, the present experimental results were compared with the experimental and theoretical data in the literature. The results show that K-shell fluorescence parameters such as photoionization cross section, fluorescence yield, radiation rates, vacancy transfer probabilities and spectral linewidth can change owing to the applied ...

2006-06-19

68

Real-time neutron monitoring method using an imaging plate

Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. Variations in microstructure and hardness of irradiated specimens were studied using transmission electron microscopy (TEM) and a ...

1997-09-01

69

Real-time neutron monitoring method using an imaging plate

A novel system for real-time radiation monitoring in reactor or accelerator facilities has been studied using an imaging plate. The authors made a feasibility study on a new neutron detection system using both photostimulated luminescence (PSL) and prompt luminescence (PL) generated in a neutron imaging plate (NIP) when the NIP is irradiated by neutrons. A readout system consisting of a semiconductor laser and a photomultiplier tube was fabricated for the purpose. It was confirmed that the system can measure both PSL and PL, where Am-Li was used as a neutron source. It may be possible to establish a new wide-range neutron monitoring system using the developed system as a PL mode normally, and as a PSL mode in case of intense neutron dose that cannot be measured in a PL mode because of saturation of the detection system. (author)

1999-07-01

70

Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector

A novel system for real-time radiation monitoring in reactor or accelerator facilities has been studied using an imaging plate. The authors made a feasibility study on a new neutron detection system using both photostimulated luminescence (PSL) and prompt luminescence (PL) generated in a neutron imaging plate (NIP) when the NIP is irradiated by neutrons. A readout system consisting of a semiconductor laser and a photomultiplier tube was fabricated for the purpose. It was confirmed that the system can measure both PSL and PL, where Am-Li was used as a neutron source. It may be possible to establish a new wide-range neutron monitoring system using the developed system as a PL mode normally, and as a PSL mode in case of intense neutron dose that cannot be measured in a PL mode because of saturation of the detection system. (author)

1999-04-19

71

Multielement analysis of air samples. Determination of iron, zinc, lead, and bromine content by the radionuclide X-ray fluorescence analysis

As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.

2010-02-19

72

Effects of stress on radiation hardening and microstructural evolution in A533B steel

Radionuclide X-ray fluorescence analysis for nondestructive determination of Fe, Zn, Pb, and Br in air samples collected on nitrocellulose membrane filter Synpor 4 is described. A /sup 238/Pu source for the excitation and a semiconductor Si/Li detector for the detection of characteristic and L-fluorescent radiation of the above elements were used. A correction method based upon the measurements of simple or multiple Compton scattering for compensation of varying mass per unit area values in sample deposits was theoretically proposed and experimentally tested. The results obtained both with and without the correction were compared and good agreement with those given by atomic absorption spectrometry was observed.

1981-01-01

73

British Library Electronic Table of Contents (United Kingdom)

Bent specimens of A533B steel (0.16wt% Cu) were irradiated at 290degreeC to 1dpa with 6.4MeV Fe3+ ions. Calculated tensile stresses at the irradiated surface were set to 0, 250, 500 and 750MPa. The specimens were subjected to hardness measurements, transmission electron microscopy (TEM) observations and three-dimensional atom probe (3DAP) analysis. The radiation-induced hardening decreased with increasing stress to 500MPa which was near the yield strength. TEM and 3DAP results showed that well-defined dislocation loops and solute clusters were formed. The diameter of dislocation loops increased and the number density decreased when the stress was applied, whereas the diameter and number density of solute clusters decreased. The hardening was mainly attributed to solute cluster formation. A...

2010-01-01

74

Design concept for radiation hardening of low power and low voltage dynamic memories

Selective radiochemical separation for indium determination at ppb levels in ion-implanted semiconductor-grade silicon

A radiation hard low power, low voltage dynamic memory is obtained by the use of a dummy cell concept. Compared to conventional dummy cell concepts, this concept applies a fully sized dummy cell. By optimizing the dummy cell precharge voltage for 5 V and 3 V operation and the timing of the dummy word-line, the overall soft error rate (SER) of the chip is improved by 2 orders of magnitude. An additional improvement of 1 order of magnitude is possible for 3 V operation by adjusting substrate bias and cell plate voltage. The results are verified by an accelerated SER measurement with a radium 226 source and an additional field soft error study.

75

MICROMAGNETISM OF HARD AND SOFT MAGNETIC MATERIALS

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

1982-12-23

76

Isolating the effect of radiation-induced segregation in irradiation-assisted stress corrosion cracking of austenitic stainless steels

Full Text Available

1995-10-01

77

Solid-state communications design of communications equipment using semiconductors

Post-irradiation annealing was used to help identify the role of radiation-induced segregation (RIS) in irradiation-assisted stress corrosion cracking (IASCC) by preferentially removing dislocation loop damage from proton-irradiated austenitic stainless steels while leaving the RIS of major and minor alloying elements largely unchanged. The goal of this study is to better understand the underlying mechanisms of IASCC. Simulations of post-irradiation annealing of RIS and dislocation loop microstructure predicted that dislocation loops would be removed preferentially over RIS due to both thermodynamic and kinetic considerations. To verify the simulation predictions, a series of post-irradiation annealing experiments were performed. Both a high purity 304L (HP-304L) and a commercial purity 304 (CP-304) stainless steel alloy were irradiated with 3.2 MeV protons at 360 deg. C to doses of 1.0 and 2.5 dpa. Following irradiation, post-irradiation anneals were performed at ...

2002-04-01

78

Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors

Solid-state communications

1966-01-01

79

Electrochemical Solar Energy Converter

No abstract prepared.

2006-07-01

80

International Science & Technology Center (ISTC)

Elaboration of Electrochemical Solar Energy Converter Incorporating Cadmium Selenide Semiconductor Developed Electrochemically

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

81

A Study on Recycling Technology of EC for Semiconductor and LCD PR Stripping Process

Full Text Available

2009-10-01

82

,>22u

Visible light emitting vertical cavity surface emitting lasers

(Watkins and. Corbett,. 1964) which is a phosphorous-vacancy complex, i.e., ...... Grover. 1965. Semiconductor. Surfaces. ...

83

Measuring instrument for radiometric monitoring of solids and heavy metals in water

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and n{sub eff} is the effective index of refraction of the laser ...

1995-06-27

84

The gamma radiation in improving the physical properties of wood-polymer composites

A combination of measuring instruments, consisting of a Beta-Sedimeter and a radionuclide X-ray fluorescence instrument, is described. With the Beta-Sedimeter the C-14-radiation is measured. Through direct irradiation with photons of a Pu238-source in an ancillary irradiation chamber and energy dispersing measurement of the K- and L-radiation resp. of the excited heavy metals with the aid of a Si(Li)-semiconductor detector and a 4-channel analyzer the heavy metal concentrations of the heavy metals Zn, Cr, Ni and Pb are determined. For the determination of cadmium the indirect excitation with Am-241 and Dy-targets is described. The system produces records and operates fully automatically in a step-by-step mode with a testing cycle of 45 minutes. In connection with the process monitoring of the wastewater from a zinc plating plant during a period of 8 months the concentration of the solid material and of the metals Cr and Zn, ...

1979-01-01

85

Quartz fiber calorimetry and calorimeters

In the Peruvian natural forest there are several kind of woods, some of those are not of commercial interest, because have not resistance at termites and wet, are too soft, or can not be well finished, in the others. The present work is devoted to improvement of the physical properties of wood, such as hardness, traction, wet resistance, etc., by means of the generation of a composite wood-polymers cured by using gamma irradiation. The main objective is to establish the main parameters for the polymerization process (economic technical aspect) that decrease the amount of water absorption, in consequence the volumetric variation of Catahua, Mohena and Capirona woods. Gamma irradiation also provides good protection against the biological agents. In consequence, these woods increase its intrinsic and economic values. (author)

2006-07-01

86

QCD corrections to top quark pair production in association with a photon at hadron colliders

Quartz fiber calorimetry is a technique the signal generation mechanism of which is based on the Cherenkov effect. In this article we try to give a comprehensive overview of the subject. We start with a general introduction to calorimetry where the basic elements that characterize the development of electromagnetic and hadronic showers are discussed. Then we describe in detail the operation principle and the properties of calorimeters equipped with quartz fibers. The main advantages of this type of calorimeters are the radiation hardness, the fast response and the compact detector dimensions, features that derive from the quartz material and the specific mechanism of operation. A section is devoted to presenting the quartz fiber calorimeters that have been built or planned to in various experiments to operate as centrality detectors, trigger detectors, luminosity monitors or general purpose very forward calorimeters.

2004-01-01

87

Investigation of the local hardening effect produced by various low-Z materials in a Si/(Fe, Pb) electromagnetic calorimeter

We compute QCD corrections to the production of a ttbar pair in association with a hard photon at the Tevatron and the LHC. This process allows a direct measurement of the top quark electromagnetic couplings that, at the moment, are only loosely constrained. We include top quark decays, treating them in the narrow width approximation, and retain spin correlations of final-state particles. Photon radiation off top quark decay products is included in our calculation and yields a significant contribution to the cross-section. We study next-to-leading order QCD corrections to the ppbar -> ttbar+gamma process at the Tevatron for the selection criteria used in a recent measurement by the CDF collaboration. We also discuss the impact of QCD corrections to the pp -> ttbar+gamma process on the measurement of the top quark electric charge at the 14 TeV LHC.

2011-01-01

88

Close binaries containing Supermassive Black Holes

The condition for obtaining a calorimetric response linear with energy for hadronic showers and an energy resolution that improves as the incident energy increases is the equalization of the electromagnetic (e) and the hadronic (#pi#) signal responses. This equalization is obtained by exploiting a local hardening effect realized through the insertion of low-Z thin plates between the high-Z absorbers and the active material in a hadronic calorimeter with silicon readout. This effect, which allows the reduction of the calorimeter response to the electromagnetic component of the incoming hadronic showers, has been investigated for different low-Z materials. The relevance of some aspects of this study to the radiation hardness of the calorimeters is also addressed. (orig.).

89

British Library Electronic Table of Contents (United Kingdom)

We consider the evolution of binary systems formed by a Supermassive Black Hole (SMBH) residing in the center of a galaxy or a globular cluster and a star in its immediate vicinity. The star is assumed to fill its Roche lobe, and the SMBH accretes primarily the matter of this star. The evolution of such a system is mainly determined by the same processes as for an ordinary binary. The main differences are that the donor star is irradiated by hard radiation emitted during accretion onto the SMBH; in a detached system, nearly all the donor wind is captured by the black hole, which strongly affects the evolution of the semi-major axis; it is not possible for companions of the most massive SMBHs to fill their Roche lobes, since the corresponding orbital separations are smaller than the radius ...

2010-01-01

90

Characterization and residual stress analysis of wear resistant Mo thermal spray-coated steel gear wheels

British Library Electronic Table of Contents (United Kingdom)

The determination of residual stress (RS) in case-hardened steel gear truck synchronisers coated with thermal sprayed molybdenum was carried out using neutron and synchrotron X-ray diffraction. Two samples with different coating thicknesses (about 120 ?m and 1.4 mm) and different steel substrates (16MnCr5 and SAE4140, respectively) were investigated. Microanalysis revealed substantial porosity in both samples and some debonding was observed between the thin coating and the substrate. The bulk hardness of the SAE 4140 proved to be much higher than the 16MnCr5 and the surface case-hardening increased it by a further 20%. The full three-dimensional stress depth-profile was determined by neutron diffraction (ND) in both the coatings and the substrates, while synchrotron radiation allowed a dep...

2006-01-01

91

Effect of helium and hydrogen production on hardness of F82H steel irradiated by dual/triple ion beams

Inverse Bloch-oscillator: Strong Thz-photocurrent resonances at the Bloch frequency

Effect of helium and hydrogen production on radiation-hardening of F82H irradiated by dual or triple beam condition were investigated. The specimens used were four types of ferritic martensitic steels of F82H-std (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) steels tempered at 750degC for 60 minutes, 20% cold worked F82H steel, F82H tempered for 10 minutes and non-tempered F82H steels. The irradiation was performed at 450degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The ratios of He (appm)/dpa and H(appm)/dpa were 15 nad 15 (or 150) for dual and triple ion beams. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. The hardness in these F82H steels irradiated at 450degC to 18 dpa under triple beam irradiation was harder than that under dual beam irradiation. Irradiation softening and hardening ...

2003-03-01

92

Quasi-ternary nanoparticle superlattices through nanoparticle design

We have observed resonant changes in the current-voltage characteristics of miniband semiconductor superlattices when the Bloch frequency is resonant with a terahertz field and its harmonics: the inverse Bloch oscillator effect. The resonant feature consists of a peak in the current which grows with increasing laser intensity accompanied by a decrease of the current at the low bias side. The peak position moves linearly with the laser frequency. When the intensity is increased further the first peak starts to decrease and a second peak at about twice the voltage of the first peak is observed due to a two photon resonance. At the highest intensities we observe up to a four photon resonance. A superlattice is expected to show negative differential conductance due to the strong nonparabolicity of the miniband. In this situation the carriers should undergo Bloch oscillations with a frequency {omega}{sub B} = eEd/h. Transient Bloch oscillations of photo excited carriers ...

1995-12-31

93

High sensitivity detection and characterization of the chemical state of trace element contamination on silicon wafers

Individual nanoscale building blocks exhibit a wide range of size-dependent properties, since their size can be tuned over known characteristic length scales of bulk materials. In the last several years, the possibility of combining different materials in the form of two and three component nanoparticles (NPs) has been extensively explored. Also multi-component materials can be obtained via self-assembly of NPs from their binary colloidal mixtures. These new nanocrystal solids may possess tunable collective properties that originate from interactions between size and composition controlled building blocks. Exchange coupling between neighboring NPs of magnetically soft and hard materials enhances the magnetic energy product of the nanocomposite material. Randomly mixed solids of small and large semiconducting CdSe NPs revealed enhancement of photoluminescence intensity of large semiconductor particles accompanied by quenching of ...

2007-06-19

94

Nonlinear transmission of two successive ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons. Giant oscillator strength model

Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO sub 2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection X-ray ...

2003-01-01

95

Electronic spectra of semiconductor nanocrystals

The possibility to compress and to split laser pulses at their nonlinear optical transmission through semiconductor films was investigated

2011-07-07

96

Triple ion-beam studies of radiation damage in 9Cr2WVTa ferritic/martensitic steel

Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

1993-12-31

97

Study of proton therapy on malignant tumors. Effects in twenty-four hours after proton irradiation

To simulate radiation damage under a future Spallation Neutron Source (SNS) environment, irradiation experiments were conducted on a candidate 9Cr-2WVTa ferritic/martensitic steel using the Triple Ion Facility (TIF) at ORNL. Irradiation was conducted in single, dual, and triple ion beam modes using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} at 80, 200, and 350{degrees}C. These irradiations produced various defects comprising black dots, dislocation loops, line dislocations, and gas bubbles, which led to hardening. The largest increase in hardness, over 63 %, was observed after 50 dpa for triple beam irradiation conditions, revealing that both He and H are augmenting the hardening. Hardness increased less than 30 % after 30 dpa at 200{degrees}C by triple beams, compatible with neutron irradiation data from previous work which showed about a 30 % increase in yield strength after 27.2 dpa at 365{degrees}C. ...

1997-11-01

98

Radionuclide X-ray fluorescence analysis using semiconductor detectors

We irradiated proton beams on the ears of rabbits and the Harding-Passey mouse melanoma and observed their morphological change. We used 52 MeV proton beams from the INS-FM cyclotron. We adjusted the energy of the proton beams to be at the plateau part of the Bragg curve, at the half-way point of the Bragg peak, and at the Bragg peak. The amount of radiation was 5000rad in each case. The Harding-Passey mouse melanoma was transplanted into the subcutan of a three week old mouse. In this experiment, we used tumors, the diameter of which grew up to 1.5-2cm in 2-3 weeks after the transplantation. Using the jroscope, we observed both lightly and severely damaged cells. Using proton irradiation with the Bragg peak located at depth of 1mm in the rabbit's ears, we studied the change in the tissue. Irradiated epidermis fell off and was eroded because of radiation damage, but the rear surface of the ...

1983-01-01

99

New laser nano-technologies for cleaning the semiconductor materials

Czech May 1979. p. 32-33. Czechoslovakia Benada, J. Spacek, B. Ustav

1979-05-01

100

Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors

2009 p. 143-144 Ukraine Lepikh, Ya.I. Odesa National University, Odesa

2009-09-15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

101

FATIGUE OF BIOMATERIALS: HARD TISSUES

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

2006-03-27

102

The AMOS cell - An improved metal-semiconductor solar cell

The fatigue and fracture behavior of hard tissues are topics of considerable interest today. This special group of organic materials comprises the highly mineralized and load-bearing tissues...Full Text Available

2010-09-01

103

Spin Modulation in Semiconductor Lasers

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

1975-01-01

104

Potential benefits of using commercial simulators to test equipment control systems

We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal analyses, we elucidate how the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts. We reveal that the spin-polarized injection can lead to an enhanced bandwidth and desirable switching properties of spin-lasers.

2010-01-01

105

Gas fixation solar cell using gas diffusion semiconductor electrode

Motivation is given for a technique to more thoroughly test semiconductor equipment control systems. A description is given of a simulator-based control system testing technique. Potential benefits that could be realized by using this technique in the semiconductor industry as well as benefits documented by using this technique in other industries are described. Specific requirements for using the technique in the semiconductor industry are outlined. A summary of a survey of nine commercial simulation systems is given. Finally, the outcome of the survey is compared with the requirements for using the technique.

1997-09-01

106

Measurement of the charge asymmetry in top-antitop quark production with the CDF II experiment

A gas diffusion semiconductor electrode and solar cell and a process for gaseous fixation, such as nitrogen photoreduction, CO/sub 2/ photoreduction and fuel gas photo-oxidation are described. The gas diffusion photosensitive electrode has a central electrolyte porous matrix with an activated semiconductor material on one side adapted to be in contact with an electrolyte and a hydrophobic gas diffusion region on the opposite side adapted to be in contact with a supply of molecular gas.

1980-12-23

107

The Measurement Errors of Elastic Modulus and Hardness due to the Different Indentation Speed

The Fermi National Laboratory (Fermilab) operates the Tevatron proton-antiproton collider at a center-of-mass energy of {radical}s = 1.96 TeV, the is therefore the only collider which is today able to produce the heaviest known particle, the top quark. The top quark was discovered at the Tevatron by the CDF and D0 collaborations in 1995. At the Tevatron, most top quarks are produced via the strong interaction, whereby quark-antiquark annihilation dominates with 85%, and gluon fusion contributes with 15%. Considering next-to-leading order (NLO) contributions in the cross section of top-antitop quark production, leads to a slight positive asymmetry in the differential distribution of the production angle {alpha} of the top quarks. This asymmetry is due to the interference of certain NLO contributions. The charge asymmetry A in the cosine of {alpha} is predicted [14] to amount to 4-6%. Information about the partonic rest frame, necessary for a measurement of A in the observable cos ...

2006-12-01

108

Evaluation of friction coefficient using indentation model of Brinell hardness test for sheet metal forming

Full Text Available

2010-09-01

109

Decomposition Mechanism of Waste Hard Metals using by ZDP (Zinc Decomposition Process)

Full Text Available

2011-06-01

110

Radiation damage measurements in room temperature semiconductor radiation detectors

Full Text Available

2011-03-01

111

Radiation hardening technologies facing total dose, S.E.U. and S.E.L. in spatial environment

The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 {times} 10{sup 10} {alpha}/cm{sup 2} produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 ...

1998-12-01

112

Half-period optical pulse generation using a free-electron laser

Space particles act on semiconductor devices by creating charges (electrons, holes) in the silicon and the silicon dioxide, and by creating displacement damage. These primary phenomena alter the electrical parameters of MOS and bipolar devices (threshold voltage V_t, mobility #mu#, conductivity #sigma#, current gain #beta#). The dose rate is not important in space (a few rad (Si)/h) but as the durations of space expeditions are on average from seven to twelve years, the total dose is an aggravating factor in the behaviour of the electrical parameters and also in device operation. The total dose effect from the beginning of charge creation (ionization) to the parameter shifts is reviewed. One can note that this effect is permanent because there will almost always be charge creation in space. Another important phenomenon is called the Single Event Upset (S.E.U.) and caused by the heavy ions and the protons which come from the galactic rays. The consequence of S.E.U. ...

113

The tunneling universe in scalar-tensor theory with matter

Recently there has been growth, in interest in non-equilibrium interaction of half-period long optical pulses with matter. To date the optical pulses have been produced by chopping out a half-period long segment from a longer pulse using a semiconductor switch driven by a femtosecond laser. In this paper we present new methods for producing tunable ultra-short optical pulses as short as half an optical period using a free-electron laser driven by electron bunches with a duration a fraction of an optical period. Two different methods relying on the production of coherent spontaneous emission will be described. In the first method we show that when a train of ultra-short optical pulses as short as one half period. We present calculations which show that the small signal gain is unimportant in the early stages of radiation build up in the cavity when the startup process is dominated by coherent spontaneous emission. To support our proposed method ...

1995-12-31

114

Structural transformations in heat-resistant protective coatings on nickel alloys

In this paper, the wavefunction of the universe with a tunneling boundary condition is considered in the context of the Brans-Dicke-type scalar-tensor theory with matter. The matter may be interpreted as a D-particle (or D0-brane) in string theory when the Brans-Dicke parameter {omega} is -1. We study two simple examples. The first example, the {gamma}=0 (matter) case, has a scale factor duality even if the low energy string action is coupled to matter. The universe undergoes quantum transition from super-inflationary (pre-big-bang) to deflationary (post-big-bang) phase. We calculate the transition rate by solving the Wheeler-DeWitt equation and find that it is non-vanishing. The two phases are disconnected classically. The second example is the {gamma}=1/3(radiation) case. With the help of earlier work this matter can be identified with a D0-brane in string theory. In this case, due to the absence of the scale factor duality and the complicated relations between ...

2007-10-21

115

Physical properties of Ti/sub 50/Be/sub 40/Zr/sub 10/ glass

In this work a comprehensive metallophysical study was carried out for two aluminosilicide slip coatings of the systems Al-Si and Al-Nb-Si and an electron-beam Co-Cr-Al-Y coating on alloy EP-539 (17...19% Cr, 4...6% Co, 2.5...4% W, 4.5...6.5% Mo, 2...3% Ti, 3...4% Al, 1.4...2% Nb, balance Ni) after high-temperature testing. The protective properties of the coatings were evaluated from the results of laboratory tests for heat resistance at 1000/sup 0/C in the combustion products of diesel fuel with added sulfur at 970, 1000, and 1060/sup 0/C for 100 h and after full-scale tests for 150, 250, 400, and 700 h. Metallographic, hardness, x-ray, and micro x-ray studies of the coating were carried out. Layer-by-layer phase composition and the lattice spacing of the main phases were determined. X-ray analysis was carried out in an a DRON-1 diffractometer in copper K/sub ..-->../-radiation, and x-ray microanalysis was carried out in a MS-46 Cameca ...

1987-09-01

116

Hardness and defect structures in EC316LN austenitic alloy irradiated under a simulated spallation neutron source environment using triple ion-beams

Continuous metallic glass ribbons were produced by mejans of liquid-quenching at rates >10/sup 50/C/s. The ribbons, typically 30 ..mu..m thick and 1 to 2 mm wide, were determined to be glassy by X-ray diffraction (XRD) employing CuK..cap alpha.. and MoK..cap alpha.. radiation. Mechanical properties of the as-quenched product were determined by measurements of hardness, tensile strength and Young's modulus. The Vicker's diamond pyramid microhardness (H/sub V/) was measured on epoxy mounted samples using a Lietz Miniload instrument with a 100 g load. Tensile tests were conducted in an Instron machine using specimens which were hand-polished to produce smooth, parallel sides. Young's modulus (E) is given by the relationship rho V/sub E/sup 2//. V/sub E/, the velocity of extensional mode waves, was measured by the pulse-echo technique using a Panametrics Intervalometer and glass density, rho, was obtained by the liquid ...

1977-09-01

117

Hardness and defect structures in EC316LN austenitic alloy irradiated under a simulated spallation neutron source environment using triple ion-beams

For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% ...

2000-04-01

118

Hard x-ray phase imaging using simple propagation of a coherent synchrotron radiation beam

For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe"+, 360 keV He"+, and 180 keV H"+ simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% elongation) was maintained ...

2000-04-01

119

Fading of irradiated blue-colored pearls. [Gamma radiation

Particularly high coherence of the x-ray beam is associated, on the ID19 beamline at ESRF, with the small angular size of the source as seen from a point of the sample (0.1-1 #mu#rad). This feature makes the imaging of phase objects extremely simple, by using a 'propagation' technique. The physical principle involved is Fresnel diffraction. Phase imaging is being simultaneously developed as a technique and used as a tool to investigate light natural or artificial materials introducing phase variations across the transmitted x-ray beam. They include polymers, wood, crystals, alloys, composites or ceramics, exhibiting inclusions, holes, cracks, ... . 'Tomographic' three-dimensional reconstruction can be performed with a filtered back-projection algorithm either on the images processed as in attenuation tomography, or on the phase maps retrieved from the images with a reconstruction procedure similar to that used for electron microscopy. The combination of diffraction ('topography') and ...

1999-05-21

120

Disturbed tooth formation by /sup 60/Co-gamma-ray radiation

The fading of irradiated and natural blue-colored pearls was investigated in this experiment. Thirty natural blue-colored pearls and sixty irradiated blue-colored pearls were used. Some of them were placed at a light position of RT. Another pearls were placed at a dark position of 50/sup 0/C. The irradiated pearls placed at a light position of RT didn't show remarkable fading in their color in 294 days. But the natural blue-colored pearls showed a little recovery from 4% to 8% in reflection factors in 223 days at RT. The irradiated pearls placed at a dark position of 50/sup 0/C showed the recovery from 9% to 14% in 264 days independently of irradiation times. The natural blue-colored pearls also showed the bleaching from 5% to 10% in reflection factor in 86 days at 50/sup 0/C. Both irradiated and natural blue-colored pearls hardly showed their remarkable changes in their chromaticities independently of temperatures.

1982-03-01

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121

Effects of initial microstructure and helium production on radiation hardening in F82H Steels

The molar of guinea pigs was irradiated with /sup 60/Co-..gamma.. ray for daily observations of the manifestation of disturbed tooth formation by microradiography and the time registration by tetracycline-labelling. Irradiation first injured young blast cells of the dentin in the growth phase, dental pulp cells, and cells of the enamel. The portion composed of injured cells formed a depressed ''constriction'' from the dental pulp side toward the border between the enamel and dentin. The cells of the enamel injured by irradiation in the growth phase later formed a very thin irregular stroma. In contrast, cells in the differentiation or subsequent phase at the time of irradiation and cells probably having started to grow after irradiation proceeded with formation of a normal stroma and calcification. No uniform relation was obtained between the histological staining of the organic stroma of normal or abnormal dentin and calcification. Labelling with ...

1982-02-01

122

Structural origin of optical bowing in semiconductor alloys p

Full text of publication follows: Fission neutron irradiation to steels doped with isotope boron-10 is frequently conducted to study effects of the helium production on mechanical properties. The intrinsic mechanical properties of F82H steels could have been changed due to the boron doping. Recently, we reported that co-doping with boron and nitrogen to F82H (F82H+B+N) improved the mechanical properties of F82H doped only with boron. The mechanical properties of F82H+B+N are successfully comparable with the non-doped F82H before irradiation. In order to evaluate the effects of initial microstructure and helium production on radiation hardening, F82H and F82H+B+N were irradiate d Specimens used in this study were standard F82H martensitic steels, F82H steels doped with 60 mass ppm 10B and 200 ppm N (F82H+10B+N) and F82H steels doped with 60 mass ppm 11B and 200 ppm N (F82H+11B+N). Initial microstructures were changed by tempering conditions, and the tempering ...

2007-12-10

123

Structural origin of optical bowing in semiconductor alloys p

The principle of conservation and transferability of chemical bonds explains the recent discovery by extended x-ray absorption fine-structure measurements of two unequal anion-cation bond lengths R/sub A/C and R/sub B/C in A/sub x/B/sub 1-x/C zinc-blende semiconductor alloys despite the close adherence of the lattice constant to the average value (Vegard rule). This bond alternation, manifested as a structural distortion to a local chalcopyrite coordination around the anions, explains also most of the observed optical bowing in semiconductor alloys.

1983-08-22

124

Practical antireflection coatings for metal-semiconductor solar cells

The principle of conservation and transferability of chemical bonds explains the recent discovery by extended x-ray absorption fine-structure measurements of two unequal anion-cation bond lengths R/sub A/C and R/sub B/C in A/sub x/B/sub 1-x/C zinc-blende semiconductor alloys despite the close adherence of the lattice constant to the average value (Vegard rule). This bond alternation, manifested as a structural distortion to a local chalcopyrite coordination around the anions, explains also most of the observed optical bowing in semiconductor alloys.

125

Lateral optical confinement of the heterostructure semiconductor Raman laser

The metal-semiconductor solar cell is a potential candidate for converting solar energy to electrical energy for space and terrestrial application. In this paper, a method for obtaining parameters of practical antireflection (AR) coatings for the metal-semiconductor solar cells is given. This method utilizes the measured equivalent index of refraction obtained from ellipsometry, since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculations of optical parameters for Ta/sub 2/O/sub 5/ AR coatings on Au-GaAs and Au-GaAs/sub 0.78/P/sub 0.22/ solar cells are presented for comparison. (AIP)

1976-09-01

126

Effective mass of heavy holes in diamond-like semiconductors

This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.

1987-11-02

127

Effective mass of heavy holes in diamond-like semiconductors

Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account according to the Loewdin procedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of Gamma/sub 15c/ and Gamma/sub 12c/ bands) and the inverse dependence on the magnitude of the spin-orbit splittiing is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semiconductors, except for materials with a very strong nonparabolicity of the band of silicon type

1987-08-01

128

Wire-shaped semiconductor light-emitting diodes for general-purpose lighting

Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account according to the Loewdin procedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of Gamma/sub 15c/ and Gamma/sub 12c/ bands) and the inverse dependence on the magnitude of the spin-orbit splittiing is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semiconductors, except for materials with a very strong nonparabolicity of the band of silicon type.

129

Sandia National Labs: PCNSC: Departments: Semiconductor Material...

The object of this work is to develop and optimize a new type of light-emitting diode (LED) with a wire-shaped, cylindrical geometry.

2002-10-28

130

SURFACE AND INTERFACE PROPERTIES OF PdCr/SiC SCHOTTKY DIODE GAS ...

For coupled quantum wires and dots, tunneling effects and coherent transport for quantum computing are being studied. In 2D systems, electron-hole bilayers for exciton...

2011-07-05

131

NOTICE THIS DOCUMENT HAS BEEN REPRODUCED FROM - NASA Technical ...

The formation of palladium silicides near the interface may decrease hydrogen solubility at the effective metal/semiconductor ...

132

Division of Solar Energy - NASA Technical Reports Server

COATINGS FOR THE METAL-SEMICONDUCTOR SOLAR CELLS 3S GIVEN. THIS METHOD UTILIZES THE MEASURED EQUIVALENT INDEX OF. REFRACTION OBTAINED FROM ELLIPSOMETRY ...

133

Change of the DKPS-100 semiconductor detector properties under 3.2 MeV alpha particle irradiation

Metal-semiconductor solar cells reported to date exhibit inherently low output voltages. This effect isa consequence of high diode "saturation" ...

134

Buried-heterostructure semiconductor Raman laser with threshold pump power less than 1 W

Russian 1977. p. 582. USSR Antropov, AE Fedoseeva, OP Milovanov,

135

Some comments on BEIR III

The low-power operation of a semiconductor buried-heterostructure Raman laser is reported. We are developing these devices for very wide-band optical communication in the terahertz frequency region. It has a structure with a GaP active layer and Al{sub {ital x}}Ga{sub 1{minus}{ital x}}P cladding layers, which are grown by the temperature-difference method under controlled vapor pressure. By making the stripe width 30--40 {mu}m, we have obtained a threshold pump power of 500 mW. A low-threshold semiconductor Raman laser can be pumped by semiconductor injection lasers. We have measured the optical loss of the waveguide and detected the contribution from scattering and leakage at heterointerfaces.

1989-12-01

136

Radiation technology of wood-plastic composite materials

... organizations irradiation radiation doses radiation effects RADIATIONS.

1982-01-01

137

Radiation chloration sulfochloration and sulfooxidation of organic compounds

... radiation effects RADIATIONS. WOOD-PLASTIC COMPOSITES.

1981-10-02

138

Identification and expression of differentially expressed genes in the hard clam, Mercenaria mercenaria, in response to quahog parasite unknown (QPX)

... halogenation ionizing radiations kinetics radiations reaction kinetics

139

Hardness, density, and shrinkage characteristics of silk-oak from ...

BackgroundThe hard clam, Mercenaria mercenaria, has been affected by severe mortality episodes associated with the protistan parasite QPX (Quahog Parasite Unknown)...Full Text Available

140

AC-130H Gunship Armor Upgrade Project

Sep 1, 2011 ... Title: Hardness, density, and shrinkage characteristics of silk-oak from Hawaii. Author: Youngs, R. L.. Date: 1964. Source: Research note FPL ...

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141

Simple transistor neutron hardness screen using scattering parameters

This report covers the test methods and equipment for testing aircraft armor both hard and soft. The hard armor are the typical ceramic type while the soft armor are various types of layered composite materials. 10 figs. (JEF)

1990-09-19

142

In situ texture analysis under applied load

(Dec 1973). United States Tausch, HJ Antinone, RJ Bailey, RA Air Force

143

A study of radiation embrittlement using simulation irradiation

The in-situ measurement of a crystallographic texture is a special type of a non-destructive measurement, which need special equipments. Due to the high photon flux and the excellent brilliance high energetic synchrotron radiations are a fantastic tool particular in fast experimentation. Moreover, a high penetration power allows the investigation of standard tensile sample of the DIN-norm. A loading device with a power up to 20 kN was installed at the hard wiggler beamline BW5 (HASYLAB-DESY) to perform in-situ strain and in-situ texture analysis. Using 100keV X-rays one gets short wavelength so that a 2D image-plate detector offers a wide range of diffraction pattern within the first 10 degree in 2 theta. Thermal neutron is another radiation with a high penetration power, which is the standard method for global texture analysis of bulk samples. As an example rectangular extruded Mg- Az31 was investigated by an in-situ. ...

144

Studies of optical properties and applications of some mixed ternary semiconductors

Simulation irradiation experiments were carried out to investigate the formation processes and contribution to hardening of radiation-induced features in low alloy steels. Medium Cu (0.12 and 0.16%) and low Cu (0.03%) A533B steels were irradiated with 3 MeV Ni ions and 5 MeV electrons, and in KUR at 290degC. Irradiated steels were examined by three-dimensional atom probe, positron annihilation, high-resolution transmission electron microscopy and hardness measurements. Electron irradiation caused almost the same hardening as KUR irradiation in medium Cu steels under almost the same dose rate and dose conditions, whereas the formation of larger, denser and more Cu enriched clusters and smaller accumulation of single vacancies were confirmed for KUR irradiation. This indicated that cascade damage provides additional cluster nucleation sites to compensate for lower free point defect production. High dose rate Ni ion irradiation produced Mn-Ni-Si ...

2008-10-13

145

Optic probe for semiconductor characterization

Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author).

146

Development of heavy-ion irradiation technique for single-event in semiconductor devices

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

2008-09-02

147

Calculation of the energy band structures in semiconductors by RAPW method

Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

1997-03-01

148

Semiconductor properties and protective role of passive films of iron base alloys

To calculate the energy band structures in semiconductors using the relativistic augmented plane wave method, atomic potential and charge density are needed, which are calculated by self-consistent method. Wave function for one electron is determined by solving the Dirac equation with the Hartree-Fock equation based on the slater's exchange potential. The results of calculation for Cu"+"1 are given. (Author).

149

Semiconductor properties and protective role of passive films of iron base alloys

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is ...

2007-01-15

150

Individual Radiation Protection Monitoring in the Marshall Islands: Rongelap Atoll (2002-2004)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both ...

2007-01-01

151

The Use of Medical Images in Planning and Delivery of Radiation Therapy

The United States Department of Energy (U.S. DOE) has recently implemented a series of strategic initiatives to address long-term radiological surveillance needs at former U.S. nuclear test sites in the Marshall Islands. The plan is to engage local atoll communities in developing shared responsibilities for implementing radiation protection monitoring programs for resettled and resettling populations in the northern Marshall Islands. Using the pooled resources of the U.S. DOE and local atoll governments, individual radiological surveillance programs have been developed in whole body counting and plutonium urinalysis in order to accurately assess radiation doses resulting from the ingestion and uptake of fallout radionuclides contained in locally grown foods. Permanent whole body counting facilities have been established at three separate locations in the Marshall Islands including Rongelap Atoll (Figure 1). These facilities are operated and ...

2006-01-17

152

Reaction of ions in radiation chemistry

Abstract The authors provide a survey of how images are used in radiation therapy to improve the precision of radiation therapy plans, and delivery of radiation treatment. In contrast...Full Text Available

1997-09-01

153

Radiation Safety and Nutrition

No abstract prepared

1998-01-01

154

Environmental Research Database

No further description is available

155

Animal Models for Radiation Injury, Protection and Therapy

Energetic electrons in impulsive and extended solar flares as deduced from flux correlations between hard X-rays and microwaves

... radiation during clinical therapy and exposures due to radiation accidents or attacks, in which the doses are uncontrolled ... only be used off-label in victims of radiation accidents or attacks. The idea...

156

Solid state and materials research: metal-semiconductor interactions

The peak flux relationship between hard X-rays and microwaves from solar flares is studied using about 400 events simultaneously recorded with the hard X-ray burst spectrometer on the SMM satellite and the Nobeyama 17 GHz radiometer. The data indicate that the hard X-ray and microwave peak fluxes correlate best for X-ray energies of less than about 80 keV for impulsive flares and greater than about 360 keV for extended flares. By postulating that electrons responsible for microwave emission at 17 GHz are those emitting hard X-rays at these photon energies, it is concluded that: (1) in impulsive flares, microwaves at about 20 GHz are emitted mainly by electrons of less than about 200 keV from a layer through which the electrons stream down into the thick-target hard X-ray source; and (2) in extended flares, microwaves are emitted mainly by MeV electrons trapped in a coronal loop or ...

1988-01-01

157

Single Molecule Source Reagents for CVD of Beta Silicon Carbide.

This section of the report is concerned with the study of the metallisation, oxidation and doping of materials which are of importance to the micro-electronics industry. The Van de Graaff accelerator and radioactive tracers are used for studying surface and sub-surface behaviour of these materials.

158

On the theory of mechano-catalytic water-splitting system

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

1991-01-01

159

NASA 2005 STTR Phase 1 Solicitation - NASA's SBIR & STTR Programs

A theory has been developed for the mechano-catalytic water-splitting, which is the system of simultaneous H{sub 2} and O{sub 2} evolution by stirring the powder of an oxide semiconductor in pure water under the condition that the stirring rod must be kept in contact with the surface of the glass vessel. The kinetic equations and the coupling strength of the frictional energy conversion between mechanical and electrical systems are calculated . The total system composed of the formation of the dangling bonds on the glass surface, the trapping of the semiconductor particles at the microcrevice of the glass surface, the strong field inside the fine particles due to the frictional electricity, the mechanism of charge transfer from the semiconductor to the stirring rod, the hopping conduction of positive hole, the electric current density injected into water from the semiconductors, and the tunnel chemical ...

2000-10-01

160

High Efficiency Thin-Fili, GaAs Solar Cells - NASA Technical ...

Advanced aerospace vehicles and system components tend to be slim and elastic, ...... In the manufacturing sector, semiconductor manufacturing requires ... The energy generation and storage for modern-day sensor networks, ...... Current NASA roadmaps point towards development of new hydrocarbon fueled engines. ...

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161

Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

162

Feynman lectures on physics, quantum mechanics; Le cours de physique de Feynman mecanique quantique

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

163

ADVANCED MICROELECTRONICS TECHNOLOGIES FOR - NASA

This course is based upon lectures in physics given by Professor Feynman at the California institute of technology during 1961 and 1962. This volume is dedicated to quantum physics, semiconductors, symmetry and advanced principles of physics.

2000-07-01

164

Replacement of bearing journals on heat transport pumps at the Wolsung nuclear generating station

... and technology-. The United States National Technology Roadmap for Semiconductors [ 11 still ... Moreover, higher volumes of production, better manufacturing capabilities and ... energy-efficient, reliable, high-performance, embedded (real-time), highly miniaturized, .... Optical Computing, Storage, and Communications. ...

165

Fabrication of beta-sialon having high hardness

The major details of the inspection and replacement of the bearing journals on each of the four heat transport pumps (HTPs) at Wolsung nuclear generating station in Korea are presented in this paper. Investigation following fracture of one of the journals in 1985 revealed that it was excessively hard. The journal material (ASTM A296 CA 40) is considered to be prone to stress corrosion fatigue if the hardness exceeds Rc 40. In 1986 May, during a planned outage, the HTPs were disassembled, the journals were inspected, found to be excessively hard, and all were replaced. At the same time, the pump to motor couplings were all refurbished to ensure proper alignment.

1987-11-22

166

An Apparent Hard X-ray Decline of CH Cygni

Hardness of beta-sialon with four different composition index values of 0.25, 0.50, 0.75 and 1.0 in the system Ni/sub 3/N/sub 4/-AlN-Al/sub 2/O/sub 3/ with the addition of 6% Y/sub 2/O/sub 3/ as sintering aid has been reported. These composition were pressureless sintered for 90, 180 and 270 min in nitrogen atmospheres at temperatures ranging from 1650 to 1800 deg. C. Highest hardness was achieved when the composition index was 0.25 was sintered for 270 minutes at 1750 deg. C. (author).

167

Plasma dynamics in PF-1000 device under full-scale energy storage: I. Pinch dynamics, shock-wave diffraction, and inertial electrode

CH Cygni is a symbiotic star consisting of an M giant and an accreting white dwarf, which is known to be a highly variable X-ray source with a complex, two-component, spectra. Here we report on two Suzaku observations of CH Cyg, taken in 2006 January and May, during which the system was seen to be in a soft X-ray bright, hard X-ray faint state. Based on the extraordinary strength of the 6.4 keV fluorescent Fe K-alpha line, we show that the hard X-rays observed with Suzaku are dominated by scattering.

2006-01-01

168

Influence of gamma rays and some pre and post harvest treatments on behavior of some fruits during cold storage

This paper (paper I) presents the first part of results obtained with the PF-1000 facility for the first time at its upper energy limit (?1 MJ). Special attention is paid here to plasma ('pinch') dynamics, which was investigated in relation to its electro-technical and radiation (especially neutron) characteristics with the help of a number of diagnostics, both time-integrated and with nanosecond temporal resolution. In these methods we utilized a Rogowski coil for the routine electro-technical measurements, visual multi-frame and streak cameras, soft x-ray pin-hole multi-frame cameras, PIN-diode assembly and PM tubes with scintillators for soft and hard x-rays as well as for neutron investigations together with a set of activation counters. In particular, the temporal cross correlation of different phenomena taking place during the discharge was investigated. The pinch's longevity appears to be 10-15 times larger than the ideal ...

2007-04-07

169

Dynamic-stiffness matrix of embedded and pile foundations by indirect boundary-element method

Apricot fruits usually harvested relatively mature but hard enough to withstand-post harvest handling through the marketing chain. These fruits have considerably lower edible quality than tree-ripened fruit. Fruit quality can be improved by delaying harvest least until physiological maturation is completed on the tree (Bonghi et al. 1999) Apricots containing 11% soluble solids concentration, or higher are in high demand by consumers, as fruit have developed considerable taste, aroma and handling for long distance markets. (Kader, 1999). These fruit will be highly perishable, so rapid cold storage to the lowest safe temperature and supplementary treatments (Mc Donald et al, 1999) such as irradiation with the recommend doses (Sillano et al, 1994) or pre-storage heat treatments will be necessary to retard ripening (mainly softening) during 1-2 weeks post harvest life necessary for distribution to distant markets (Mc Donald et al 1999). Therefore, one can conclude that ...

2003-03-01

170

The effects of the focus ion beam milling process on the optical properties of semiconductor nanostructures

The boundary-integral equation method is well suited for the calculation of the dynamic-stiffness matrix of foundations embedded in a layered visco-elastic halfspace (or a transmitting boundary of arbitrary shape), which represents an unbounded domain. It also allows pile groups to be analyzed, taking pile-soil-pile interaction into account. The discretization of this boundary-element method is restricted to the structure-soil interface. All trial functions satisfy exactly the field equations and the radiation condition at infinity. In the indirect boundary-element method distributed source loads of initially unknown intensities act on a source line located in the excavated part of the soil and are determined such that the prescribed boundary conditions on the structure-soil interface are satisfied in an average sense. In the two-dimensional case the variables are expanded in a Fourier integral in the wave number domain, while in three dimensions, Fourier series in ...

1984-08-01

171

Strained silicon for quantum computing

In this work, the effects of the focus ion beam (FIB) milling process on the optical properties of semiconductor nanostructures were investigated. With this aim, a sensitive materials system based on InGaAs/GaAs quantum dots with well known and excellent optical properties was selected for the FIB treatment. The FIB technique was used to locally remove a metallic mask deposited on top of the quantum dot sample. The photoluminescence (PL) signal, collected from the circular openings, was used to infer the possible damage effects of the ion beam on the properties of the dots.

2009-06-24

172

Stability of coherently strained semiconductor superlattices

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

2002-03-07

173

Plasma immersion ion implantation. (Latest citations from the EI Compendex*plus database). Published Search

The excess energy of several III-V and II-VI strained-layer semiconductor superlattices (AC)_p(BC)_p is studied as a function of the repeat period p and orientation G=[001], [110], [111], and [201], using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all p's and G's with respect to bulk disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin epitaxial [110] and [201] and most common-anion [001] superlattices relative to coherent phase separation.

174

Electrodynamical and quantum-chemical approaches to modeling the electrochemical and catalytic processes on metals, metal alloys, and semiconductors

The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

1998-01-01

175

British Library Electronic Table of Contents (United Kingdom)

A problem of the catalytic activity definition for metals, binary metallic alloys, and semiconductor materials is considered within new quantum mechanical and electrodynamics approach in the electron theory of catalysis. The quantitative link between the electron structure parameters of the materials and their catalytic activity on example of simple model reactions of the following type are found: H = H+ + e, O2 + e- = O2-. Copyright 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009

2009-01-01

176

What Makes Some Problems Really Hard: Explorations in the ...

Structural properties of Zr-1%Nb alloy surface modified by impulse electronic beam and hydrogen treatment

... of Hanoi or Missionaries and Cannibals, It is not immediately obvious what constitutes a "move"--that is, what actual manipulations of the physical ...

1988-09-01

177

SiAlON composite ceramics

... base alloys alloys beams chemical reactions elements hardness irradiation

2010-09-06

178

Nomographs for the rapid prediction of salt quality and influent water quality impacts on hardness leakage in steamflood water

Monolithic SiAlON ceramics are hard and brittle with little possibility for property design, but multi-phase SiAlON ceramics offer great scope for controlling microstructural development and desired properties. The ceramics can also be reinforced by separate additions of other hard, refractory compounds. The toughness in all these SiAlON composites can be increased by several mechanisms, and the best effect is reached if they are combined. When glassy phase is present, crack paths are affected by the strains caused by different thermal expansion of the glassy phase and the crystals and also by the interface properties. The crystal shape influence toughness, especially pronounced is the effect of the elongated #beta#- grains. Different toughening mechanisms are achieved by separately added reinforcement phases. The hardness is raised by the presence of #alpha# SiAlON and other hard constituents, such as ...

1993-10-04

179

New Frontiers in Binary Stars: Science at High Angular ...

Counter-current regeneration of 2-stage sodium zeolite softeners has been employed in reducing hardness leakage level of steamflooding water to less than 1 ppm when raw water contains as much as 5,000 ppm of the total dissolved solids. Hardness leakage is caused by sodium displacement of calcium and magnesium from the bottom of the exchanger bed. This study presents nomographs providing for rapid calculations to be made, for which a convenient operational mode does not already exist. The nomographs relate the hardness leakage as a function of salt quality and influent water quality and present solutions for predicting the leakage level, salt quality requirement or the treatability of raw water required for steamflooding projects.

1982-08-01

180

Neurocysticercosis, a Persisting Health Problem in Mexico

... interacting systems in which common-envelope evolutionary effects make it hard to generalize the results to single-star evolution, although they ...

2011-05-15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

181

Necrotizing sialometaplasia of tongue

BackgroundThe ongoing epidemiological transition in Mexico minimizes the relative impact of neurocysticercosis (NC) on public health. However, hard data on the disease frequency...Full Text Available

182

NASA - Top Dog K-9 Unit Keeps Kennedy Safe

Necrotizing sialometaplasia, is a benign inflammatory lesion primarily involving the minor salivary glands of the hard palate. The lesion often presents itself as a deep-seated palatal ulcer with clinical...Full Text Available

2009-01-01

183

Indentation Load Effect on Young Modulus and Hardness of Porous Sialon Ceramic by Dept Sensing Indentation Tests

Oct 30, 2009... of Belgian sheepherding dogs that are popular with the police and military. ... "She was a hard-working K-9 and she will be missed." ...

184

Hardness and Defect Structure in EC316LN Austenitic Alloy Irradiated Under a Simulated Spallation Neutron Source Environment Using Triple Ion-Beams

Turkish English ... Authors Sahin, O. (Suleyman Demirel University, Department of Physics, Isparta (Turkey))

2007-08-28

185

Broad-band hard X-ray reflectors

No abstract prepared.

1999-01-01

186

DEFF Research Database (Denmark)

Interest in optics for hard X-ray broad-band application is growing. In this paper, we compare the hard X-ray (20-100 keV) reflectivity obtained with an energy-dispersive reflectometer, of a standard commercial gold thin-film with that of a 600 bilayer W/Si X-ray supermirror. The reflectivity of the multilayer is found to agree extraordinarily well with theory (assuming an interface roughness of 4.5 Angstrom), while the agreement for the gold film is less, The overall performance of the supermirror is superior to that of gold, extending the band of reflection at least a factor of 2.8 beyond that of the gold, Various other design options are discussed, and we conclude that continued interest in the X-ray supermirror for broad-band hard X-ray applications is warranted.

1997-01-01

187

EDI as a Treatment Module in Recycling Spent Rinse Waters

Statistical cut-off criterion

Recycling of the spent rinse water discharged from the wet benches commonly used in semiconductor processing is one tactic for responding to the targets for water usage published in the 1997 National Technology Roadmap for Semiconductors (NTRS). Not only does the NTRS list a target that dramatically reduces total water usage/unit area of silicon manufactured by the industry in the future but for the years 2003 and beyond, the NTRS actually touts goals which would have semiconductor manufacturers drawing less water from a regional water supply per unit area of silicon manufactured than the quantity of ultrapure water (UPW) used in the production of that same silicon. Achieving this latter NTRS target strongly implies more widespread recycling of spent rinse waters at semiconductor manufacturing sites. In spite of the fact that, by most metrics, spent rinse waters are of much higher purity than incoming ...

1999-08-11

188

Radiation protection and the management of radioactive waste in the oil and gas industry

... radiation effects human populations low dose irradiation neoplasms radiation

1980-01-01

189

Influence of germanium and oxygen impurities on the radiation hardening of monocrystalline silicon

Radiation protection and the management of radioactive waste in the oil and gas industry

2003-01-01

190

Higher harmonics of spontaneous radiation of ultrarelativistic channeled particles

... defects doped materials germanium infrared radiation monocrystals neutron

191

Genetically and somatically significant radiation doses in the radiotherapy of inflammatory and degenerative diseases

The case of spontaneous radiation of channeled ultrarelativistic particles is considered when the dipolarity condition is not satisfied. The change of the particle longitudinal velocity affecting the maximum radiation frequency is included. The angular and frequency characteristics of the radiation for superhigh energies are studied for the first time. It is shown that there is an optimum energy at which the radiation density is maximum. The influence of the angle at which electrons enter a crystal and of the beam divergence on the radiation is investigated. The problem of quasichanneled particle radiation and also the radiation in axis-plane transitions are considered. (author).

1980-06-01

192

Contribution to the radiation preparation of wood-plastic materials. Pt. 7

... pathological changes patients radiation protection radiotherapy diseases

1982-10-25

193

Contribution to the radiation preparation of wood-plastic materials. Pt. 6

... odd nuclei organic compounds radiation effects radioisotopes synthesis

1974-01-01

194

Contribution to the radiation preparation of wood-plastic materials Pt. 3

... compounds polymers polyolefins polyvinyls radiation effects SYNTHESIS.

1974-01-01

195

Compact Proton and Carbon Ion Synchrotrons for Radiation Therapy

... compounds plants radiation effects radioisotopes reaction kinetics trees

1974-01-01

196

Compact Proton and Carbon Ion Synchrotrons for Radiation Therapy

2002-01-01

197

? j -

Systematics of average radiative width of heavy nuclides

duced and spontaneous radiation. The amount of polarization is ... of the induced and spontaneous radiation patterns. Therefore ...

198

Results for the structural properties of random heaps of hard disks

Systematics of neutron capture radiative width were studied in the target element range from Th to Cm. Reduced radiative widths were analyzed with a simple radiative width formula based on E1 transition. Average radiative width is presented with the standard deviation of 15%. (author)

1999-03-01

199

Electron-beam cladding of wear-resistant composite coatings on the base of titanium carbide

The average angle of repose and the packing density of random planar heaps of hard disks falling ballistically onto a sticky base line, where the first layer of disks is quenched in random positions, are computed for heaps with a small fixed number of gaps in the base layer. The results we find appear to be almost independent of the size of the heap and they agree with those obtained from computer simulations of large systems.

1995-01-01

200

Variability and spectral modeling of the hard X-ray emission of GX 339-4 in a bright low/hard state

The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

201

The Hard X-ray Spectral Evolution in XRBs, AGNs and ULXs

We study the high-energy emission of the Galactic black hole candidate GX 339-4 using INTEGRAL/SPI and simultaneous RXTE/PCA data. By the end of January 2007, when it reached its peak luminosity in hard X-rays, the source was in a bright hard state. The SPI data from this period show a good signal to noise ratio, allowing a detailed study of the spectral energy distribution up to several hundred keV. As a main result, we report on the detection of a variable hard spectral feature (>150 keV) which represents a significant excess with respect to the cutoff power law shape of the spectrum. The SPI data suggest that the intensity of this feature is positively correlated with the 25 - 50 keV luminosity of the source and the associated variability time scale is shorter than 7 hours. The simultaneous PCA data, however, show no significant change in the spectral shape, indicating that the source is not undergoing a canonical ...

2010-01-01

202

Micro-hardness measurements to evaluate composition gradients in metal-based functionally graded materials

We explore the relationship between the hard X-ray photon index $\\Gamma$ and the Eddington ratio (\\xi=L_{X}(0.5-25 keV)/L_{Edd}) in six XRBs. We find that different XRBs follow different anti-correlations between $\\Gamma$ and $\\xi$ when $\\xi$ is less than a critical value, while they follow the same positive correlation when $\\xi$ is larger than the critical value. This anti-correlation and positive correlation are also found in LLAGNs and QSOs respectively, and the anti-correlation and positive correlation of different XRBs roughly converge to the same point ($\\log \\xi=-2.1, \\Gamma=1.5$), which may correspond to the accretion mode transition, since that the anti-correlation and positive correlation are consistent with the prediction of ADAFs and standard disk/corona system respectively. The traditional low/hard state are divided into two parts by the cross point $\\log \\xi\\sim-2.1$, i.e., faint-hard state in the ...

2008-01-01

203

Hard X-ray identification of Eta Carinae and steadiness close to periastron

Micro-Vickers hardness measurement has been used to determine the composition of functionally graded materials (FGMs). Materials used in the present study are Al-SiC, Al-Shirasu and Al-Al{sub 3}Ni FGMs, which are fabricated by a centrifugal method. The micro-hardness of the aluminum matrix for Al-SiC FGM markedly increases as the volume fraction of SiC particles increases. However, the tendency is not so clear in the cases of Al-Shirasu and Al-Al{sub 3}Ni FGMs. Plastic strain energy due to thermal misfits between the matrix and dipersed particles is calculated based on an elasto-plastic analysis by applying a shell theory after Lee et al. The hardness is correlated theoretically with the composition gradient through the mean plastic strain energy (responsible for dislocation density). It is concluded that the composition gradient of metal-based FGMs can be determined from micro-hardness measurements. ...

2001-01-01

204

Accretion Properties of A Sample of Hard X-ray (<60keV) Selected Seyfert 1 Galaxies

Context: The colliding-wind binary Eta Car exhibits soft X-ray thermal emission that varies strongly around periastron, and non-thermal emission seen in hard X-rays and gamma-rays. Aims: To definitively identify Eta Car as the source of the hard X-ray emission, to examine how changes in the 2-10 keV band influence changes in the hard X-ray band, and to understand more clearly the mechanisms producing the non-thermal emission using new INTEGRAL observations obtained close to periastron. Methods: A Chandra observation encompassing the ISGRI error circle was analysed, and all other soft X-ray sources (including the outer shell of Eta Car itself) were discarded as likely counter-parts. New hard X-ray images of Eta Car were studied close to periastron, and compared to previous observations far from periastron. Results: The INTEGRAL component, when represented by a power law (with a photon index of 1.8), ...

2010-01-01

205

Quasiparticle band structure of thirteen semiconductors and insulators

We examine the accretion properties in a sample of 42 hard (3-60keV) X-ray selected nearby broad-line AGNs. The energy range in the sample is harder than that usually used in the similar previous studies. These AGNs are mainly complied from the RXTE All Sky Survey (XSS), and complemented by the released INTEGRAL AGN catalog. The black hole masses, bolometric luminosities of AGN, and Eddington ratios are derived from their optical spectra in terms of the broad H$\\beta$ emission line. The tight correlation between the hard X-ray (3-20keV) and bolometric/line luminosity is well identified in our sample. Also identified is a strong inverse Baldwin relationship of the H$\\beta$ emission line. In addition, all these hard X-ray AGNs are biased toward luminous objects with high Eddington ratio (mostly between 0.01 to 0.1) and low column density ($<10^{22} \\mathrm{cm^{-2}}$), which is most likely due to the selection effect of ...

2008-01-01

206

Quasiparticle band structure of thirteen semiconductors and insulators

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various experimental uncertainties. Several other ...

1991-06-15

207

Development of internal dose estimation software on radiation protection

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al_0_._5Ga_0_._5As and In_0_._5_3Ga_0_._4_7As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, E(#GAMMA#_1_c) of AlP, E(L_1_c) of AlAs, and E(L_1_c) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related properties are also examined in this work. The many-body corrections to ...

208

The evaluation of risks from radiation

Objective: To develop a computerized method of internal dose estimation on radiation protection. Methods: Based on MIRD mathematic model of the organs and by means of the programming language of MS Visual Basic 6.0, a computer program of dose estimation in internal radiation was developed for radiation protection. Results: The computerized method of dose estimation for internal radiation was completed. Conclusions: This computerized method is very convenient for internal radiation dose estimation of several aspects. It can also be used in radiation accident. (authors)

2008-10-01

209

Study of Maytenus aquifolium martius chemical compounds stability face to ionizing radiations (x radiation and gamma radiation)

German translation of the publication 'The evaluation of risks from radiation' published in 1965 by the International Commission on Radiological Protection. In a survey, genetic and somatic risks from radiation are presented and explained. (HP).

1977-01-01

210

Role of Mast Cells in Early and Delayed Radiation Injury in Rat Intestine

Portuguese Sep-Oct 1996 p. 571 Brazil Campos, Patricia Sao Paulo

211

Radionuclide X-ray fluorescence analysis. 1: Excitation of X-ray fluorescense radiation by nuclear radiation

... mast cell staining; ref. 16). The severity of structural radiation injury was assessed using a histopathological radiation injury score ... ...

212

Radionuclide X-ray fluorescence analysis. 2: Detection of the X-ray fluorescence radiation excited by radionuclide radiation

The principles of radionuclide excitation of X-ray fluorescence radiation and its application in

1972-01-01

213

Radiation protection - an overview of the concept for radiation protection at work and the concept for environmental radiation protection

This investigation describes the technique for the detection of the X-ray fluorescent radiation

1972-01-01

214

Systematics of high temperature perturbation theory: The two-loop electron self-energy in QED

This book gives an overview of the entire field of radiation protection with the subject areas radioactivity, X-rays, UV radiation, laser beams and high-frequency electromagnetic fields. It deals graphically with the most important physical notions, the incidence, origin, properties and biological effects of types of radiation, administrative and practical protection measures and the code of rules governing them. Apart from fundamentals of radiation protection the emphasis on the following: natural radiation exposure, radiation exposure to radon, disaster relief plans in the environment of nuclear plant, the precautionary radiation protection system evolved after Chernobyl, radiation exposure through UV radiation devices, radio, RF communication, radar, microwave ovens and high-voltage transmission ...

1993-01-01

215

Visible-wavelength semiconductor lasers and arrays

In order to investigate the systematics of the loop expansion in high temperature gauge theories beyond the leading order hard thermal loop (HTL) approximation, we calculate the two-loop electron proper self-energy #SIGMA# in high temperature QED. The two-loop bubble diagram of #SIGMA# contains a linear infrared divergence. Even if regulated with a nonzero photon mass M of order of the Debye mass, this infrared sensitivity implies that the two-loop self-energy contributes terms to the fermion dispersion relation that are comparable to or even larger than the next-to-leading order (NLO) contributions of the one-loop #SIGMA#. Additional evidence for the necessity of a systematic restructuring of the loop expansion comes from the explicit gauge-parameter dependence of the fermion damping rate at both one and two loops. The leading terms in the high temperature expansion of the two-loop self-energy for all topologies arise from an explicit ...

2010-01-15

216

The potential of III-V semiconductors as terrestrial photovoltaic devices

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

1996-09-17

217

Solar photochemistry and heterogeneous photocatalysis

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

2006-07-01

218

Interaction of energetic beams with metals and semiconductors - a computational approach

The search for alternative energy supplies continues since the oil crisis of 1973. One energy vector is dihydrogen, H_2. Of the group VI hydrides, water has been the focus of most studies in harnessing solar energy and generating H_2. Two basic photochemical strategies have been employed: molecular photocatalytic systems, and semiconductor based photocatalytic systems. The results have not met with the euphoric expectations of the mid-1970's because of the difficulties encountered in H_2O splitting (E"0 S"2 "-/S = + 0.51 eV, NHE) is another vehicle tapped as a potential source of H_2. Heterogeneous photocatalysis utilizing semiconductor particulates and sunlight as the photon source has been successful with interesting quantum efficiencies. To this end, novel photocatalytic devices have been developed; one of these uses two coupled semiconductors to achieve vectorial displacement of the photogenerated reducing and oxidizing ...

219

Electronically tunable semiconductor laser (ETL) based on silica Bragg reflectors

In a vacuum insulator, the narrow electron beam emitted from the cathode impinges on the anode and raises its temperature and also may produce high thermal stress. This high thermal stress, in conjuction with the surface electrostatic pressure may rupture the surface and detach particles from it. In this thesis, the interaction of high energy electron and laser beams with metals and semiconductors is investigated. The differential equations governing the physical processes involved in the interaction are solved by the finite element method. Effects of beam penetration into the material, variable beam reflectance at the surface, finite beam size and dependence of material properties on temperature are accounted for. The two-phase moving boundary problem, also known as the Stefan problem, is solved by an enthalpy formulation of the heat equation. Material deformation by thermal stresses caused by high temperature gradients and electrostatic forces induced by space ...

1984-01-01

220

WC-TiC-Ni cemented carbide with enhanced properties

We will report on a new type of tunable semiconductor laser, which is based on the electronic selection of one Bragg grating among an array of such gratings in silica. The device that we have built operates at 120 Mb/s but extension to 1 Gb/s for Gigabit-Ethernet applications would be straightforward. In comparison with tunable semiconductor lasers using gratings in the III-V materials, silica gratings offer two significant advantages: 1-wavelength stability and predictability, 2-the ability to phusically overlap many gratings in a compact space in order to enable the selection of a large number of wavelengths for wavelength division multiplexed communications systems. The time required to chagne the wavelength in our laser has not been measured for lack of the necessary electronics but it is expected to be in the microsecond range on the basis of a straightforward calculation. The robust all solid-state nature of our device and its expected ...

2003-12-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

221

British Library Electronic Table of Contents (United Kingdom)

In the paper, the effect of Ni content, WC grain size and Mo2C addition on WC-6.25wt%TiC-9.3wt%Ni cemented carbide were investigated to improve the properties of Ni-bonded cemented carbides. The results show that the decrease of Ni content will result in the decrease of transverse rupture strength and increase of hardness; with the decrease of WC particle size, hardness increases due to the refinement of WC grains, however, the transverse rupture strength decrease due to the decrease of Ni binder thickness; Mo2C proves to be an effective grain growth inhibitor. With the increase of Mo2C content, the WC grains are refined and the hardness and transverse rupture strength are improved. Generally, when the Ni content is decreased to 8.4wt%, 13.45mm WC is used and 1.2wt% Mo2C is added, a higher...

2008-01-01

222

High temperature properties of ceramics in the SiAlON system

First derivative of the hard-sphere radial distribution function at contact

A series of SiAlON materials with a cordierite-based matrix were annealed for different lengths of time to cause crystallization of the glass phase. Their fracture toughness, hardness, and elastic modulus were measured from room temperature up to 1100"0C. The fracture toughness generally decreased with temperature. Short time annealing raised toughness at lower temperatures, while further annealing lowered it back to the value for as-hot pressed materials. At higher test temperatures annealing had no effect on toughness. This annealing behavior is significantly different from that previously reported in the system SaAlON-YAG. Hardness decreased monotonically with temperature for all samples. Both hardness and the elastic modulus were not affected by the annealing treatment. At elevated temperatures appreciable scatter of modulus results allowed only a rough trend of decrease with temperature to be observed.

223

Evaluation of the Soft and Hard Tissue Changes After Anterior Segmental Osteotomy on the Maxilla and Mandible

Molecular dynamics simulations have been carried out of the radial distribution function of the hard sphere fluid for a range of densities in the equilibrium fluid and just into the metastable region. The first derivative of the hard-sphere radial distribution function at contact was computed and its density dependence fitted to a simple analytic form. Comparisons were made with semi-empirical formulae from the literature, and of these the formula proposed by Tao et al (1992 Phys. Rev. A 46 8007) was found to be in best agreement with the simulation data, although it slightly underestimates the derivative at the higher packing fractions in excess of about 0.45. Close to contact, within a few per cent of the particle diameter, the radial distribution function can be represented well by a second order polynomial. An exponential function, which has some useful analytic features, can also be applied in this region.

2006-08-16

224

British Library Electronic Table of Contents (United Kingdom)

PurposeThe purpose of this study was to determine the relationship between the changes of soft and hard tissues after modified anterior segmental osteotomy on the maxilla and mandible and to evaluate unintended facial changes using cephalometric and photometric analyses.Materials and MethodsThe subjects included 29 women and 1 man (22 to 50 years of age) who were diagnosed as bialveolar or bimaxillary protrusion and underwent modified anterior segmental osteotomy on the maxilla and mandible. Lateral cephalograms and lateral and frontal photographs taken preoperatively and postoperatively were analyzed.ResultsThere was a significant change in all soft and hard tissue parameters except the labiomental angle. The ratio of upper lip to maxillary incisor retraction was 0.67:1 and the ratio of l...

2008-01-01

225

Elastic properties, hardness and indentation fracture toughness of #beta#-sialons

Cumulative production of direct photons and leptonic pairs

Dense samples of #beta#-sialons (with z from 1 to 4) were pressuressly sintered for different time (15-240 minutes) and at relatively low temperature of 1600 C using single-phase #beta#-sialon powders synthesized by combustion nitridation. The samples were characterized using ultrasonic method for determination of elastic properties (E,G,#mu#). Also, hardness by Knoop and fracture toughness by Vickers indentation microfracture method was estimated. With increasing z number Young's modulus decreases from 293 to 179 GPa. Simultaneously Poisson ratio increases by about 30%. The highest values of hardness and fracture toughness were obtained for sialon with z equal to 1. (orig.).

1993-10-04

226

Ceramic bearings for application to hard disc drives (HDD); HDD yo ceramic ball bearing

Leptonic pair production on nuclei ad EMC-effect are discussed within the frames of the flucton model with scaling distortion. Cumulative production of direct photons and leptonic pairs as a test of the model of hard collisions is considered. The results of calculations of massive leptonic pair production cross sections on nucleus fluctons, caculations of the ratio of deuterium and iron structural functions, cross sections of direct photon production on sup(181)Ta nuclei at Esub(p)=400 GeV and cross section of #pi#-meson production in the model of hard collisions are presented. Experimental discovery of direct cumulative photons is concluded to be important for understanding the mechanism of parton hard scattering from nucleus fluctons.

1984-06-19

227

Temperature-dependent properties of semiconductor quantum dots in coherent regime; Temperaturabhaengige Eigenschaften einzelner Halbleiter-Quantenpunkte im Kohaerenten Regime

Ceramic ball bearings of silicon nitride are used for hard disk drive (HDD) spindle motors, to increase seed, reliability and memory capacity of the HDDs. Silicon nitride ceramics have advantages of lightweight, high strength and hardness over the conventional steel for bearings, but is expensive. A new process of high cost performance has been developed for mass production of the small-size ceramic balls. The company plans to apply these bearings to higher devices, e.g., servers, for the time being, and to expand the applicable areas, e.g., common devices and other small-size motors. The ceramic bearings have been developed jointly with Koyo Seiko Co. Ltd. (translated by NEDO)

2000-03-01

228

Tunable single-wavelength semiconductor lasers

Recently, the public has become aware of keywords like ''Quantum computer'' or ''Quantum cryptography''. Regarding their potential application in solid state based quantum information processing and their overall benefit in fundamental research quantum dots have gained more and more public interest. In this context, quantum dots are often referred to as ''artificial atoms'', a term subsuming their physical properties quite nicely and emphasizing the huge potential for further investigations. The basic mechanism to be considered is the theoretical model of a two-level system. A quantum dot itself represents this kind of system quite nicely, provided that only the presence or absence of a single exciton in the ground state of that structure is regarded. This concept can also be expanded to the presence of two excitons (bi-exciton). Transitions between the relevant levels can be ...

2009-10-15

229

Technology of GaAs metal-oxide-semiconductor solar cells

This dissertation deals with both the theoretical and the technological aspects of monolithic tunable lasers, and the experimental techniques for opto-electronic integration. In the theoretical part, the principles and limitations of wavelength tuning and spectral linewidth reduction in monolithic semiconductor lasers are described, with coupled distributed feedback-Fabry Perot (DFB-FP) lasers and long DFB lasers as examples. Stepwise tuning of wavelength over tens of nanometers and continuous tuning over the range of a mode spacing are shown to be possible. Spatial hole burning is found to affect the spectral linewidth of lasers involving strong active gratings. On the technological side, one of the major issues is the fabrication of flexible gratings. Direct-writing techniques, such as focused ion beam (FIB) implantation and e-beam lithography, provide the resolution, flexibility and accuracy that conventional holographic lithography lacks. The parasitic ...

1988-01-01

230

Synthesis by plasma and characterization of semiconductor compounds derived of polyacetylene; Sintesis por plasma y caracterizacion de compuestos semiconductores derivados del poliacetileno

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

1977-01-01

231

Surface energy of semiconductors covered with thin layers of various materials

In this work it is made a study of the structure and electric properties of chlorate polyethylene (PE-CI) with double and simple bonds obtained by continuous plasma with resistive coupling to 13.5 MHz. The synthesis conditions are power between 10 and 14 W and pressure of (6-7) x 10{sup -2} Torr. The synthesized PE-Cl in that way is soluble in acetone what indicates that probably is formed of short chains and not it shows the generalized inter crossing that is presented in some syntheses by plasma and that it can degrade the electric properties of these polymers. The IR and XPS analysis show the vibration of the C-C, C=C and C-CI bonds. The morphology of the polymer after being dissolved shows a compact and flat configuration. The electric conductivity has an approximately lineal behavior in an interval of 35 to 90% of relative humidity. (Author)

2003-07-01

232

Studies of interlayer magnetic coupling in all-semiconductor superlattices by means of neutron scattering techniques

Surface energy of III-V semiconductors ended by (110) clean surface and surface covered by atomic monolayer of aluminium, copper and sulfur has been calculated. We have used the Greens-function technique based on the scheme of linear muffin-tin orbitals in the atomic sphere approximation (LMTO-ASA) for the crystal potential and width the local density approximation (LDA) for electrons. Two types of coverage are considered: full monolayer with two additional atoms per two-dimensional unit cell and half monolayer with one additional atom per unit cell. Full monolayer of metallic atoms increases the surface energy. Cu atoms lead to greater destabilization than Al atoms. Sulfur atoms stabilize (110) surface for all considered compounds. (author)

1997-09-23

233

Status and progress in ion implantation technology for semiconductor device manufacturing

An overview on neutron scattering studies of ferromagnetic and antiferromagnetic all-semiconductor superlattices is presented. Diffraction experiments on MnTe/CdTe, MnTe/ZnTe and EuTe/PbTe superlattices show pronounced correlations between the MnTe and EuTe layers across the non-magnetic spaces, even though these layers are antiferromagnetic and the systems are nearly-insulating. Current theory status of these systems is discussed. Diffractometry and reflectometry data from EuS/PbS superlattices reveal pronounced antiferromagnetic coupling between the ferromagnetic EuS block. First polarized neutron reflectometry data from superlattices prepared of a novel ferromagnetic 'spintronics' material, Ga(Mn)As are also presented. (author)

2001-09-23

234

Stability of coherently strained semiconductor superlattices

Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

1998-12-08

235

Microscopic Origin of the Phenomenological Equilibrium ''Doping Limit Rule'' in n -Type III-V Semiconductors

The excess energy of several III-V and II-VI strained-layer semiconductor superlattices ({ital AC}){sub {ital p}}(BC){sub p} is studied as a function of the repeat period {ital p} and orientation {bold G}=(001), (110), (111), and (201), using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all {ital p}'s and {bold G}'s with respect to {ital bulk} disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin {ital epitaxial} (110) and (201) and most common-anion (001) superlattices relative to coherent phase separation.

1990-01-01

236

Large Magnetic Moments of Arsenic-Doped Mn Clusters and their Relevance to Mn-Doped III-V Semiconductor Ferromagnetism

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

2000-02-07

237

Investigation of electronic traps in disordered organic semiconductors via thermally stimulated current measurements

We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.

2005-01-01

238

High energy heavy ion irradiation in semiconductors

Charge transport in disordered organic semiconductors is generally described as thermally activated hopping in a gaussian distribution of localized states. The presence of charge traps is critical to the performance of organic electronic devices, since trapped charge carriers do no longer contribute to the current flow. The trap distribution in the polymer poly(3-hexylthiophene) (P3HT) is investigated by applying the fractional thermally stimulated current technique. Thereby, a low temperatur double-peak distribution has been revealed. One of the peaks is believed to belong to the tail of the intrinsic density of states, whereas the other trap is strongly affected by exposure to oxygen. We discuss the influence of oxygen exposure time on the trap distribution.

2008-07-01

239

Formation of defects in epitaxial heterostructures and multicomponent solid solutions of semiconductor compounds

Pd/n-Si and Pd/n-GaAs devices have been irradiated from high energy ({approx}100 MeV) heavy ions of Au{sup 7+} (gold) and Si{sup 7+} (silicon) to study the irradiation effects in these junction devices on semiconductor substrates. The devices have been characterized from I-V and C-V studies for electronic flow characterization. It has been found that the devices become high resistive on the irradiation and the substrates change the conductivity type from n- to p- on the irradiation of fluence of {approx}10{sup 12}-10{sup 13} ions/cm{sup 2}. The change in conductivity type has been understood as a result of creation of deep acceptors on the irradiation.

1999-07-02

240

Focused ion beam preparation of inclined planes in semiconductor materials

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

241

Energetic ion beams in semiconductor processing: Summary of a DOE panel study

Focused ion beam (FIB) micromachining has been used to produce inclined planes on semiconductor surfaces. A 10 keV FIB system, utilising a Ga"+ liquid metal ion source (LMIS), was employed. The ramped surfaces were prepared by digitally deflecting the ion beam in a serpentine fashion over a rectangular area and incrementing the time the beam spends at a pixel, dwell time, line by line. For the conditions used, control in micromachining the inclination of the ramps to the starting horizontal surface is of the order of 1 arc s per scan of the FIB over the area of interest. The possibility of using such surfaces prepared by FIB, along with vacuum growth techniques such as molecular beam epitaxy (MBE), for application to strain relief structures and lateral device production is discussed. (author).

242

Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis

The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.

1995-12-31

243

Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

2006-06-29

244

Electrochemistry of a semiconductor chalcopyrite concentrate leaching by Thiobacillus ferrooxidans

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

2006-06-29

245

Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures

Using carbon-paste-CuFeS{sub 2} electrodes and a cyclic voltammetric technique, it was found that a large number of intermediate electrochemical oxidation reactions were associated with the dissolution of chalcopyrite in presence and absence of bacteria. The effects of concentrations of copper, ferrous and ferric ions, as well as of agitation on the peaks of cyclic voltammograms were measured. It was established that chalcopyrite oxidation was solid-state controlled as suggested by the data of chronopotentiometric and chronoamperometric measurements. The activation energy of solid state diffusion of chalcopyrite leaching was determined by the Sand's method to be {triangle}E{sub a} = 20.5 kJ. The leaching mechanism is discussed in terms of solid-state properties (energy bonding) of the n-type semiconductor chalcopyrite and energy density states of redox systems of acidic bacterial leach media. A generalized model for the mechanism of chalcopyrite leaching ...

1991-01-01

246

Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

1975-01-01

247

A novel approach for measuring the radial distribution of charge in a heavy ion track

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

248

A model for Schottky-barrier solar cell analysis

The energy deposited by the passage of a single, energetic, heavy-ion through a semiconductor produces dense electron-hole (eh) pair concentrations near the ion trajectory. The size, shape, and charge density of an ion track represent critical parameters for many models of single event phenomena. The authors describe the design and uses of possible semiconductor test structures for measuring the initial radial distribution of charge and subsequent charge transport in a high energy, heavy-ion track. Numerical simulations show how the test structure can resolve different radial distributions of charge within an ion track. The test structure simulations also show the importance of accurately representing ion track structure in single event effects simulations.

1994-07-18

249

A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)

1976-05-01

250

The superconducting critical temperature of radiation damaged A-15 compounds

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

2008-06-18

251

The European XFEL Free Electron Laser at DESY

Not Available

1978-05-01

252

ScienceCinema

...spontaneous radiation ...

253

THE ENVIRONMENTAL MANAGEMENT AND CO-ORDINATION ACT, 1999

Radiation processing technology for cosmetics: a report on a canadian study

Subject to the provisions of the Radiation Protection Act, the Authority, on the advice of ...(f) in collaboration with the Radiation Protection Board, conduct an ionising radiation monitoring programme and ...or document kept under the control of the Radiation Protection Board.

254

Radiation cryochemistry of cubic ice; Kriochemia radiacyjna lodu kubicznego

Short communications only.

1992-09-13

255

Monitoring station for medical effects of exposure during radiation accidents

No abstract prepared

1998-12-31

256

Measurement of UV radiation of LED lighting

Short communication.

1995-04-06

257

Ignition of a solid fuel by thermal radiation

Full Text Available

2011-03-01

258

Estimation of the radiation damages of the Uppsala spectator detector

Full Text Available

1998-03-01

259

Comparative characteristics of radiation accidents affecting population

No abstract prepared.

2002-03-01

260

Application of gamma radiation

Short communication.

1994-10-25

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261

A Feasibility Study of Smoking Cessation Program in Radiation Oncology

Described and discussed in this paper are radiation processes and their advantages over the conventional techniques. Radiation sterilization of medical products, food irradiation, wood plastic composites, and radiation treatment of sewage and waste waters are presented. The Philippine experience in using these technologies, its problems and barriers are also given. (ELC).

1985-12-10

262

???? ?? ???? ?? ?? ( Ignition of a Solid Fuel by Thermal Radiation )

Cancer and Tobacco Abuse

2007-10-29

263

Studies on lipids in fractions of spherosomes and mitochondria of #gamma#-irradiated seeds of peanuts and walnuts

Full Text Available

1998-03-01

264

... chemical radiation effects decomposition extraction columns gamma radiation

1972-01-01

265

Radiobiology

Radiation Therapy in Treating Patients With Prostate Cancer

This text-book (electronic book - multi-media CD-ROM) constitutes a course-book - author's collection of lectures. It consists of 13 lectures in which the reader acquaints with the basis of radiobiology: Introduction to radiobiology; Physical fundamentals of radiobiology; Radiation of cells; Modification of radiation damage of cells; Reparation of radiation damage of cells; Radiation syndromes and their modification; Radiation injury; Radiation damage of tissues; Effect of radiation on embryo and fetus; Biological effects of incorporated radionuclides; Therapy of acute irradiation sickness; Delayed consequences of irradiation; Radiation oncology and radiotherapy. This course-book may be interesting for students, post-graduate students of chemistry, biology, physics, medicine as well as for teachers, scientific workers ...

266

Radiation Therapy and Cisplatin With or Without Amifostine in Treating Patients With Stage IIIB or Stage IVA Cancer of the Cervix

Prostate Cancer; Psychosocial Effects of Cancer and Its Treatment; Radiation Toxicity; Sexual Dysfunction and Infertility

2011-09-13

267

Cervical Cancer; Radiation Toxicity

2011-09-09

268

NAME=\\

Measurement of fast fluctuations of radiation intensity in pulsed charged particle accelerators

... Radiation Protection Products and Equipment Find and compare a variety of radiation protection products and equipment on the world's largest environmental industry portal. View product ...

269

Standards and guidances for limiting ionizing radiation exposure

... beam monitoring betatrons delay circuits errors fluctuations gamma radiation

270

Radiation protection in the operating room

This chapter is concerned with standards and guidances for limiting radiation exposures. It is divided into three sections, each of which has several parts. Section 1: Ionizing Radiation -- Standards and Guidances Applicable to the Public: Part A, Radiation Protection Standards; Part B, Environmental Radiation Standards; Part C, Exempt Levels of Radioactivity; Part D, Protective Action Guides for Accidents. Section 2: Ionizing Radiation -- Standards Applicable to the Workplace. Section 3: Medical and Other Standards.

1992-12-31

271

Wrinkled hard skins on polymers created by focused ion beam

On the basis of legally provided area dose measurements and time records of fluoroscopic examinations during the operation, radiation doses to medical personnel and patients are evaluated. Adequate radiation protection measures and a careful behaviour in the operating room keep the radiation exposure to the personnel below the maximum permissible exposure. Taking into account the continuous personnel radiation monitoring and medical supervision, radiation hazards in the operating room can be considered low.

272

TO: All GCN Notice recipients RE

A stiff skin forms on surface areas of a flat polydimethylsiloxane (PDMS) upon exposure to focused ion beam (FIB) leading to ordered surface wrinkles. By controlling the FIB fluence and area of exposure...Full Text Available

2007-01-23

273

Role-Reversal Exercise with Deaf Strong Hospital to Teach Communication Competency and Cultural Awareness

These sky images are scanned for point sources above a specified ... The threshold criteria are: a) Gold: >4 sigma in both the Soft AND Hard bands. b) Silver: ... Filtering: Currently, there is no plan for filtering within the GCN based ...

274

Predicting outcome of rethoracotomy for suspected pericardial tamponade following cardio-thoracic surgery in the intensive care unit

ObjectiveTo implement a role-reversal exercise to increase first-year pharmacy students' awareness of communication barriers in the health care setting, especially for deaf and hard-of-hearing...Full Text Available

2011-04-11

275

Position-sensitive proportional counter for space-based X-ray imaging studies

ObjectivesPericardial tamponade after cardiac surgery is difficult to diagnose, thereby rendering timing of rethoracotomy hard. We aimed at identifying factors predicting the outcome...Full Text Available

276

Plasma nitriding of austenitic stainless steel in N_2 and N_2/H_2 gas admixture

ASTROSAT, India's first dedicated astronomy satellite is slated for launch in 2007. The primary science objective of ASTROSAT is to explore the Universe using broad-band instruments covering optical, UV, soft X-ray and hard X-ray studies

2005-03-01

277

Pattern of seat belt use by drivers in Trinidad and Tobago, West Indies

Plasma nitriding in glow discharge is a process of modifying surface properties of a material by which surface hardness, corrosion resistance, fatigue strength etc. of a material can be improved

2004-09-01

278

Nonlinear response of superconductors to alternating fields and currents

BackgroundIn Trinidad and Tobago, the law on the mandatory use of seat belts was passed in 1995, but this law is hardly enforced. The objective of this study was to determine the...Full Text Available

279

Microstructural and mechanical characterization of high energy ball milled and sintered WC-10wt%Co-xTaC nano powders

This report discusses the following topics on superconductivity: nonlinearities in hard superconductors such as surface impedance of a type II superconductimg half space and harmonic generation and intermodulation due to alternating transport currents; and nonlinearities in superconducting weak links such as harmonic generation by a long Josephson Junction in a superconducting slab.

1997-10-08

280

British Library Electronic Table of Contents (United Kingdom)

Ultra fine tungsten carbide and cobalt powders were milled by high energy planetary ball mill at different ball to powder weight ratios (BPR) to produce particles of WC-10wt%Co hard metal in nanometer scale size. Microstructural characterizations by TEM show that the particle size of tungsten carbide was achieved to 32nm after milling at 15 BPR during 10h. In order to reduce the WC grain growth during the sintering process, tantalum carbide was added to the hard metal as a WC grain growth inhibitor. The nano hard metal powders were compacted at 200MPa pressure and sintered at 1370-1450degreeC temperatures in a high purity hydrogen atmosphere. The results show that the addition of 0.6wt% of TaC improves the hardness and fracture toughness from 1493 HV30 and 11.8MPam (for TaC free sample) to...

2009-01-01

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281

Mechanical properties of excimer laser modified titanium surfaces

Making simple sentences hard: Verb bias effects in simple direct object sentences

Excimer laser processing enables both thermally-driven transformations and the incorporation of solutes into the surface of materials through melting and diffusional mixing. We have examined the effect of excimer laser processing on the microstructure and surface mechanical properties of titanium alloys. Changes in the surface hardness due to laser processing were studied using a Nanoindenter [trademark]. Alloying experiments using both mixing of evaporated surface layers of boron and laser gas alloying in air and in nitrogen all result in changes in the surface hardness of the material. Alloying with boron results in an amorphous surface which is somewhat harder than the as polished surface. Laser processing in air and pure nitrogen results in incorporation of oxygen and nitrogen and the development of fine ([approximately] 50 nm) precipitates of TiO and TiN respectively. Substantial increases in surface hardness result ...

1993-01-01

282

Learning the Hard Way: Force Protection 1983-2000.

Constraint-based lexical models of language processing assume that readers resolve temporary ambiguities by relying on a variety of cues, including particular knowledge of how verbs combine...Full Text Available

2009-04-01

283

Laser hardening of titanium-zirconium alloy

The October 2000 terrorist attack on the guided-missile destroyer USS Cole (DDG 67) in the port of Aden, Yemen, is commonly viewed in the larger context of al-Qa'ida's September 11th campaign. Beyond the initial official investigations, the military force...

2009-01-01

284

Hardening by point defects in neutron irradiated AlN and SiC

The methods of surface modification of Ti-Zr alloy by laser treatment are considered. Characteristics of laser modification without- and with surface melting and with melting in different gaseous environments and with nickel microalloying are presented. Maximum depth, hardness and corrosion resistance are observed under nickel laser alloying.

285

Evolving hard problems: Generating human genetics datasets with a complex etiology

Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence ...

286

Egg attachment of the asparagus beetle Crioceris asparagi to the crystalline waxy surface of Asparagus officinalis

BackgroundA goal of human genetics is to discover genetic factors that influence individuals' susceptibility to common diseases. Most common diseases are thought to result from the...Full Text Available

287

Effect of Cr content, hardness and micro structure on flow-accelerated corrosion in carbon steel pipes. Examination of replaced carbon steel pipes

Plant surfaces covered with crystalline epicuticular waxes are known to be anti-adhesive, hardly wettable and preventing insect attachment. But there are insects that are capable of gluing their eggs...Full Text Available

2010-03-22

288

Correspondence of Ultrasound Elasticity Imaging to Direct Mechanical Measurement in Aging DVT in Rats

68 replaced carbon steel piping in secondary system of pressurized water reactor (PWR) has been investigated by visual examination for checking thinning conditions. It is well known that the flow-accelerated corrosion (FAC) was inhibited by traces of Cr in steel. Therefore, the chemical compositions of those steels have been measured. In addition, the micro structure and hardness of those steels have been investigated. And the relationship between those material variables and FAC rate was considered. As the results, (1) The Cr contents in those steels were below 0.1 wt% except one sample. Minute quantities of chromium increase the resistance against FAC. But the water velocity was thought to be the dominant factor rather than chemical composition in steel, at least such as below 0.1%Cr. (2) Hardness of all piping has been satisfied the specifications of each materials. The hardness of steels was not correlated with wall ...

2008-10-01

289

Adhesion of DOPA-Functionalized Model Membranes to Hard and Soft Surfaces

Previous ultrasound elasticity imaging experiments supported a generally accepted concept that the hardness of deep venous thrombi increases with thrombus aging. Results also showed that this...Full Text Available

2005-10-01

290

A comparison of the corrosion behaviour and hardness of steel samples (100Cr6) coated with titanium nitride and chromium nitride by different institutions using different deposition techniques

The adhesive proteins secreted by marine mussels form a natural glue that cures rapidly to form strong and durable bonds in aqueous environments. These mussel adhesive proteins contain an unusual...Full Text Available

2009-01-01

291

Wear resistance of a laser surface alloyed Ti-6Al-4V alloy

Deposition of hard coatings may influence the mechanical properties of the bulk material and its corrosion resistance. In this work we study the hardness of the coated and the back side of 100Cr6 steel plates. Electrochemical corrosion tests were performed in O{sub 2}-saturated acetate buffer of pH 5.6 at 25degC. Chromium nitride and titanium nitride coatings prepared by different physical vapour deposition processes, such as arc, thermionic arc evaporation, magnetron sputtering and ion-beam-assisted deposition (IBAD) were compared. The results show that, for sufficient corrosion protection, chromium nitride layers have to be thicker than 500 nm. An increased nitrogen partial pressure in the evaporation chamber of the IBAD process improves the corrosion resistance significantly. The hardness of the substrates was reduced in the case of thermoionic arc evaporation only, indicating a deposition temperature of more than ...

1991-07-07

292

Numerical prediction of flow field and particle trajectory in a hard disk drive

Laser surface alloying with gaseous nitrogen was utilized to improve the wear resistance of a Ti-6Al-4V alloy. Wear-resistant composite coatings reinforced by hard TiN dendrites were produced 'in-situ' on a substrate of a Ti-6Al-4V alloy. The hardness and wear resistance of the laser alloyed coating under two-body abrasive and block-on-ring full-sliding wear conditions were significantly enhanced. (orig.)

2000-08-01

293

Manufacturing of golf club using wood-plastic combination produced by. gamma. -irradiation

A flow field and particle trajectory in a HDD (Hard Disk Drive) between two rotating disks in axisymmetric enclosures is investigated using CFD code FLUENT/UNS. The RNG k-{epsilon} model is used as a turbulent model. In this study, the flow field between two disks are symmetric, and the flow field near the enclosure is very complex. Cross stream vectors are shown both for blowing and no blowing from the hub. The larger a particle, the more fast the particle deposits at the walls. In the case of blowing from the hub, the more fast the particle deposits at the walls. (author). 9 refs., 12 figs., 1 tab.

1999-11-01

294

Manufacturing of golf club using wood-plastic combination produced by #gamma#-irradiation

Wood-plastic combination (WPC) was produced by {gamma}-irradiation of persimmon impregnated with acrylonitrile and styrene. The hardness and strength of WPC obtained were higher than those of an unmodified wood. Thus, it was found that the WPC is suited for a head of golf club, because the Shore hardness value of WPC is 36% greater than that of unmodified wood. An impregnation method of monomers with some pigments could produce colored WPC without diminishing natural grain. Head of golf club could be manufactured from colored WPC in practice. (auhtor).

1992-01-01

295

Hard X-ray phase imaging and tomography using a grating interferometer

Wood-plastic combination (WPC) was produced by #gamma#-irradiation of persimmon impregnated with acrylonitrile and styrene. The hardness and strength of WPC obtained were higher than those of an unmodified wood. Thus, it was found that the WPC is suited for a head of golf club, because the Shore hardness value of WPC is 36% greater than that of unmodified wood. An impregnation method of monomers with some pigments could produce colored WPC without diminishing natural grain. Head of golf club could be manufactured from colored WPC in practice. (auhtor).

1992-01-01

296

Glow Discharge Plasma Nitriding of AISI 304 Stainless Steel

An interferometric technique for hard X-rays is presented. It is based on two transmission gratings and a phase-stepping technique, and it provides separate radiographs of the phase and absorption profiles of bulk samples. Tomographic reconstruction yields quantitative three-dimensional maps of the X-ray refractive index and of the attenuation coefficient, with a spatial resolution down to a few microns. The method is mechanically robust, it requires little monochromaticity, and can be scaled up to large fields of view. These are important prerequisites for use with laboratory X-ray sources. Numerous applications ranging from wave front sensing to medical radiography are presently under investigation.

2007-07-01

297

Effects of variable hardness, ph, alkalinity, suspended clay, and humics on the chemical speciation and aquatic toxicity of copper

Glow discharge plasma nitriding of AISI 304 austenitic stainless steel has been carried out for different processing time under optimum discharge conditions established by spectroscopic analysis. The treated samples were analysed by X-ray diffraction (XRD) to explore the changes induced in the crystallographic structure. The XRD pattern confirmed the formation of an expanded austenite phase (#gamma#_N) owing to incorporation of nitrogen as an interstitial solid solution in the iron lattice. A Vickers microhardness tester was used to evaluate the surface hardness as a function of indentation depth (#mu#m). The results showed clear evidence of surface changes with substantial increase in surface hardness.

2007-08-01

298

Distribution of 6q-fluctons in nuclei and quark enhancement of hard processes with deuteron emission

The effects of variable hardness, pH, alkalinity, humics, and suspended clay on the chemical speciation of copper and its toxicity to fathead minnow larvae in Lake Superior water were investigated. Two proposed methods (toxicity factors and chemical speciation) for predicting LC50 values in specific natural waters from laboratory toxicity data and the average site specific values of general water quality parameters were evaluated. The accuracy of the cupric ion-selective electrode in determining CU/sup +2/ activities in ambient and chemically altered Lake Superior water was also determined.

1986-03-01

299

Current situation of steel industry and coking coal industry and expectations for Canadian coal

The distributions of the effective numbers of 6q-fluctons in the energy, momentum and distance to the center of mass of nucleus are studied. Many characteristics of these distributions are shown to be universal, i.e. independent of the flucton size. The saturation of the flucton density in A > 80 nuclei and other peculiarities are found, which define different behavior of the effective numbers of fluctons and deuterons. This fact provides an explanation of the known underestimate by a factor of 1.5-6 of the cross sections of hard inclusive (p, p'd) process on nuclei calculated in the quasi-elastic approximation.

300

A low temperature synthesized NbC grain growth inhibitor in WC-Co hardmetal alloy

The world steel industry and market and the current status and prospects for the Japanese steel industry are discussed with particular reference to China, Europe, and the US. Trends in coking coal supply from Australia, Canada, and Mongolia and changes in demand for hard and semi-soft coking coals are considered. Canadian coal plays a significant role in the hard coking coal and PCI coal markets. This is expected to continue. Emerging concerns include the strong Canadian dollar and increases in fuel and materials costs. Canadian suppliers are asked to improve efficiencies, be competitive in the overall coal chain, and diversify their PCI coal reserves. 14 figs.

2006-07-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

301

A Virtual Young's Double Slit Experiment for Hard X-ray Photons

The efficiency of NbC on WC grain coarsening in a WC-10wt.%Co hardmetal alloy was demonstrated by hardness measurement and WC granulation observation. The heterogeneous and overall grain growth were controlled. A low temperature experimentally produced NbC was used and compared to the inhibition potential of a commercial NbC powder. The results were the same in terms of structural fineness and hardness. The dispersion of the experimental NbC was not a problem, in spite of its size. The experimental NbC has very large particles, formed by agglomerates of small crystallites. During milling these agglomerates could be broken down. (orig.)

2001-07-01

302

Survey of Radiation Protection Education and Training in Finland in 2003

We have implemented a virtual Young's double slit experiment for hard X-ray photons with micro-fabricated bi-prisms. We observe fringe patterns with a scintillator, and quantify interferograms by detecting X-ray fluorescence from a scanned 30nm Cr metal film. The observed intensities are best modeled with a near-field, Fresnel analysis. The maximum fringe number in the overlap region is proportional to the ratio of real to imaginary parts refractive index of the prism material. The horizontal and vertical transverse coherence lengths at beamline APS 8-ID are measured.

2009-01-01

303

RF plasma nitriding of severely deformed iron-based alloys

The current state and need for radiation protection training in Finland have been surveyed by the Radiation and Nuclear Safety Authority STUK. The survey sought to determine whether the current requirements for radiation protection training had been met, and to promote radiation protection training. Details of the scope and quality of present radiation protection training were requested from all educational institutes and organizations providing radiation protection training. The survey covered both basic and further training, special training of radiation safety officers, and supplementary training. The questionnaire was sent to 77 educational organization units, 66 per cent of which responded. Radiation workers and radiation safety officers were asked about radiation protection ...

2004-07-01

304

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10"-"5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of #epsilon# and #gamma#' nitrides in the compound layer, with a preferential formation of #gamma#' at the expense of the #alpha#-phase at the higher nitriding ...

2003-05-15

305

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

1994-07-11

306

Visible semiconductor laser operation below 640 nm at room temperature

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

307

Search for anisotropy in the L x-gamma angular correlations following the decay of "2"0"7Bi

Recent progress with the (Al_xGa_1_-_x)_0_._5In_0_._5P alloy system has resulted in laser diodes which operate at room temperature at wavelengths below 640 nm. OMVPE is used to grow the multi-quantum-well devices in a graded-index separate-confinement configuration. Laser threshold currents as low as 75 mA have been achieved.

1988-11-02

308

Radionuclide X-ray fluorescence analysis of drinking water using preconcentration of trace metals on chelating cellulose exchanger ostsorb-oxin

An investigation of the Ll x-#gamma# angular correlations following the decay of "2"0"7Bi is done by using a Si(Li) semiconductor counter as L x-ray detector. Coincidence measurements at five different angles were made between the 570-keV #gamma# ray (gated in the movable counter) and the Ll x spectrum (displayed in a multichannel analyzer).

309

Optimizing semiconductor devices by self-organizing particle swarm

Determination of Cr, Fe, Cu, Zn and Pb in drinking water preconcentrated on a chelating ion exchanger of Czechoslovak production is described. The analytical system consisted of a radionuclide source "2"3"8Pu, a Si/Li semiconductor detector and a multichannel analyzer. Results are compared with trehshold limit values recommended for drinking water. (author) 9 refs.; 2 figs.

1992-04-01

310

Monitoring interfacial dynamics by pulsed laser techniques. [Annual report

A self-organizing particle swarm is presented. It works in dissipative state by employing the small inertia weight, according to experimental analysis on a simplified model, which with fast convergence. Then by recognizing and replacing inactive particles according to the process deviation information of device parameters, the fluctuation is introduced so as to driving the irreversible evolution process with better fitness. The testing on benchmark functions and an application example for device optimization with designed fitness function indicates it improves the performance effectively.

2005-01-01

311

Medical explorations by radioisotopes in Lebanon

Goal was developing optical methods for study of dynamic processes at the electrode/electrolyte interface. In the past year, optical second harmonic generation was used for time-resolved measurements of thallium deposition on Cu(111). The studies of carrier dynamics in photo-excited materials have involved both steady-state and picosecond time-resolved luminescence measurements following photoexcitation of the semiconductor material.

1992-12-31

312

Lamp system for uniform semiconductor wafer heating

This study mainly concerns medical explorations by radioisotopes. Detectors with medical exams and applications are described. Ionisation chambers, semiconductor detectors and scintillation counters are also presented. Uses of radioisotopes in medicine in vivo and in vitro techniques are explained. Examples of scintiscanning are given like: angiography, nuclear cardiography and thyroid scintiscanning. The importance of the study is to present a panorama of nuclear medicine laboratories -at the time- in hospitals in Lebanon.

313

Investigation of morphology and chemical composition of self-organized semiconductor quantum dots and wires by X-ray scattering

A lamp system with a very soft high-intensity output is provided over a large area by water cooling a long-arc lamp inside a diffuse reflector of polytetrafluorethylene (PTFE) and titanium dioxide (TiO.sub.2) white pigment. The water is kept clean and pure by a one micron particulate filter and an activated charcoal/ultraviolet irradiation system that circulates and de-ionizes and biologically sterilizes the coolant water at all times, even when the long-arc lamp is off.

2001-01-01

314

Identification and determination of elements in Taraxacum officinale plant from different Bratislava localities

X-ray scattering methods suitable for the investigation of the morphology and chemical composition of self-organized quantum dots and quantum wires are reviewed. Their application is demonstrated in experimental examples showing that a combination of small angle X-ray scattering with high-resolution X-ray diffraction can reveal both the shape and the chemical composition of the self-organized objects. (author)

2001-09-23

315

Identification and determination of elements in Taraxacum officinale plant from different Bratislava localities

Elements Ti, Mn, Fe, Ni, Cu, Zn, Pb, Br, Rb and Sr were determined by the method of radionuclide X-ray fluorescence analysis with semiconductor detection in samples of Taraxacum officinale from various localities of Bratislava. The dependence of their content on the source and the degree of the air pollution was found out.

1983-01-01

316

Determination of heavy metals in industrial wastewaters and their influence on activated sludge biocenose

Elements Ti, Mn, Fe, Ni, Cu, Zn, Pb, Br, Rb and Sr were determined by the method of radionuclide X-ray fluorescence analysis with semiconductor detection in samples of Taraxacum officinale from various localities of Bratislava. The dependence of their content on the source and the degree of the air pollution was found out. (author).

1983-01-01

317

Determination of Fe and Zn in healing plants by radionuclide X-ray fluorescence analysis

Radionuclide X-ray fluorescence method with a Si/Li semiconductor detector and "2"3"8Pu exciting source was used in the determination of Cr, Fe, Ni, Cu, and Zn content in industrial wastewaters. Simultaneously, the effects of the wastewaters on activated sludge biocenose were evaluated. (author) 6 refs.; 1 fig.; 1 tab.

1994-03-01

318

Determination of Cu, Ni, Zn and Pb contents in taraxacum officinale near the highway D-61 Bratislava-Trnava (SR) by radionuclide X-ray fluorescence analysis

Radionuclide X-ray fluorescence method was used for the determination of Fe and Zn in healing plants (Sage, Peppermint, Stinging, Common Agrimony, Milfoil, Ribwort, Tansy, White Dead-Nettle). "2"3"8Pu exciting source and Si/Li semiconductor detector were used for the determination. (author)

1999-06-01

319

Determination of Cu, Ni, Zn and Pb contents in soil near the D-61 Bratislava-Trnava Highway by radionuclide X-ray fluorescence analysis

Radionuclide X-ray fluorescence method with Si/Li semiconductor detector and "2"3"8Pu exciting source was used for the determination of Cu, Ni, Zn and Pb in plant samples (Taraxacum officinale) from various localities near the highway D-61 Bratislava-Trnava (SR). (author) 2 refs.; 1 fig.; 1 tab.

1993-12-01

320

Cost effectiveness of Silent Discharge Plasma for point-of-use VOC emissions control in semiconductor fabrication

Radionuclide X-ray fluorescence method with Si/Li semiconductor detector and "2"3"8Pu exciting source was used for the determination of Cu, Ni, Pb, and Zn in soil samples from various localities near the D-61 Bratislava-Trnava highway (CSFR). (author) 1 ref.; 1 tab.

1993-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

321

Analysis of stability of semiconductor 5-component solid solutions of A"3B"5 compounds

Extensive research into the treatment and control of Volatile Organic Compounds (VOCs) from semiconductor industry manufacturing processes has identified the need for alternatives to existing combustion devices. Specifically, semiconductor manufacturing design is moving toward exploiting effective, small-scale, abatement control technologies for specific point-of-use (POU) waste streams associated with a particular component or manufacturing tool. The Silent Discharge Plasma (SDP) developed at Los Alamos National Laboratory is a nonthermal plasma technology created by a dielectric-ballasted electrical discharge. Influent gas-phase pollutants are destroyed in the reactor by the free radicals or electrons generated by the plasma. This paper examines the potential for SDP to be used in niche circumstances for POU control of VOC exhaust streams specific to the semiconductor industry. A sensitivity analysis is presented, showing ...

1997-07-01

322

Advanced Ceramic Technology

With the use of the regular solutions model the expressions have been derived for calculation of boundaries of spinodal decomposition region as applied to five-component solid solutions of A"3B"5 compounds. The evaluation has been made of fields of stability for Al_x__1Ga_x__2In_1_-_x__1_-_x__2PyAs_1_-_y solid solution.

323

The benefits of low level radiation

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

2007-02-01

324

Stimulated radiation of high - current relativistic electron beams

The assumed linear relationship between exposure to radiation and cancer incidence is questioned in this article. The current research data on radiation effects at the cellular level is reviewed, as are epidemiological studies of background radiation effects and health effects of populations exposed to low levels of radiation exposure via employment or medical treatments. Statistics reveal that threshold levels currently in force need to be reviewed. Some evidence of beneficial effects of low level radiation exposure effects of low level radiation exposure is also presented, and so regulations should be reviewed at an international level. (UK).

1997-06-01

325

Radiation protection. A guide for scientists and physicians

The most propagated mechanisms of stimulated radiation of electron beam such as Cherenkov one-particle and collective effects, ondulator and magnetic bremsshrahlung radiations, Doppler anomalous effect, Thompson and Raman scattering and radiation are discussed. Relation of spontaneous radiation mechanisms of individual electron and stimulated radiation effects in electron beams has been elucidated, grounds of linear electrodynamics of radiative beam instabilities are stated, and main mechanisms of their nonlinear stabilization are elucidated as well. Various simulated processes in electron beams are considered from the unique point of view using a simple mathematical apparatus and such physical laws as conservation and Newton laws.

1987-01-01

326

Combining satellite data and models to estimate cloud radiative effect at the surface and in the atmosphere

This manual was written for individuals who wish to become qualified in radiation protection as an adjunct to working with sources of ionizing radiation or using radionuclides in the field of medicine. It provides the radiation user with information needed to protect himself and others and to understand and comply with governmental and institutional regulations regarding the use of radionuclides and radiation machines. It is designed for a wide spectrum of users, including physicians, research scientists, engineers, and technicians. It should be useful also to radiation safety officers, members of radiation safety committees, and others who are responsible for the proper use of radiation sources, although they may not be working with the sources directly. The presentation in this manual is designed to obviate the need for reviews of atomic ...

327

British Library Electronic Table of Contents (United Kingdom)

Abstract Satellite measurements and numerical forecast model reanalysis data are used to compute an updated estimate of the cloud radiative effect on the global multi-annual mean radiative energy budget of the atmosphere and surface. The cloud radiative cooling effect through reflection of short wave radiation dominates over the long wave heating effect, resulting in a net cooling of the climate system of - 21 Wm-2. The short wave radiative effect of cloud is primarily manifest as a reduction in the solar radiation absorbed at the surface of - 53 Wm-2. Clouds impact long wave radiation by heating the moist tropical atmosphere (up to around 40 Wm-2 for global annual means) while enhancing the radiative cooling of the atmosphere over other regions, in particular higher latitudes and sub-trop...

2011-01-01

328

Biological effects of electromagnetic radiation in the microwave range

[The indicators of biological age and accelerated aging in liquidators of the consequences of radiation emergency].

The book examines current experimental and clinical knowledge concerning the biological and biophysical effects of electromagnetic radiation, particularly that in the microwave range. The biophysical bases of the interaction of electromagnetic radiation with matter are reviewed with emphasis on biological systems, and the effects of radiation on critical biological systems, including the nervous, reproductive, visual and blood-forming systems are compared. Data concerning the lethal effects of nonionizing radiation is presented and characteristics of the effects of electromagnetic radiation on the whole mammalian organisms are examined. Various reactions of the neuroendocrine system to electromagnetic radiation are described, with particular attention given to the adrenal system, and the combined effects of ionizing and microwave radiation ...

1980-01-01

329

The THz Radiation from Undulator

The biological age (BA) of the majority of the liquidators of the consequences of the radiation accidents in the Navy and of the liquidators of the Chernobyl' APS accident exceeds the medium standard and the DBA (due BA). The index of the BA can be a characteristic of the influence of the social-hygienic factors on the health condition of the Special Risk Subunit--the liquidators of the consequences of the radiation accidents. It was established, that the radiation influence concerns to the factors dramatically increasing the BA and the rate of senescence of the liquidators of the consequences of the radiation accidents. PMID:21809627

2011-01-01

330

Study of emission of Cerenkov radiation by tachyons

The experimental device for generation of undulator radiation in terahertz wavelength region by use of undulator with ferromagnets is created. The device is based on a beam of a microtron with the energy 7.5 MeV. The radiation wavelength is 200 mu. Registered spontaneous radiation has a power 10{sup -6} W at a current of a beam 2 mA in a pulse. With the optical resonator, in a mode, the amplification of 6% is received, that in sometimes is more than the expected value. This effect is explained as a result of partial coherence of radiation.

2010-02-03

331

Radiation facility with electron accelerator of the Institute for Nuclear Research of Ukraine, Kiev

The emission of Cerenkov radiation by tachyons has been examined by using the reduced expansions of superluminal electromagnetic fields in terms of standard helicity representation of Poincare group. It has been shown that the tachyons emit Cerenkov radiation through their coupling only with subluminal electromagnetic fields and that a charged tachyon can emit Cerenkov radiation only in the media in which it travels with a velocity lower than that of light while in the usual medium in which its velocity is more than that of light, it will never emit Cerenkov radiation.

1983-01-01

332

Radiation exposure of the population of the GDR by X-ray diagnostics

Characteristics of the Ukrainian NSA NRI radiation facility for scientific researches and developments of industrial radiation technology are performed. Parts of the facility, design peculiarities of technical tools are described. Biological protection of the facility and radiation protection system, transport line, systems of technical provision and radiation measurements are discussed

2003-02-01

333

Potential Hazards from Neutrino Radiation at Muon Colliders

The radiation burden of the people of the GDR in relation to biomedical radiography altogether as well as organ doses, gonad doses and genetically significant doses in detail are outlined. The concepts of radiation protection and standards of radiographic examination are demonstrated. Possibilities of influencing radiation exposure by scientifically based indication of X-ray examination, application of new and improvement of usual examination techniques are discussed with regard to quality assurance and control. Proposals concerning the reduction of radiation exposure of the GDR population are presented.

1986-01-01

334

Model of quantum noise of shadow radiation images

High energy muon colliders, such as the TeV-scale conceptual designs now being considered, are found to produce enough high energy neutrinos to constitute a potentially serious off-site radiation hazard in the neighbourhood of the accelerator site. A general characterization of this radiation hazard is given, followed by an order-of-magnitude calculation for the off-site annual radiation dose and a discussion of accelerator design and site selection strategies to minimize the radiation hazard.

1999-01-01

335

Coherent oscillator radiation

Correlation characteristics of quantum noise on the shadow radiation image (RI) of the object under nondestructive testing are studied. Mathematical model of RI occasional distortions is derived. The model takes into account the parameters of object under testing and of radiation beam by radiation quanta flux density. The results obtained can be used as a component in the process of investigation of various radiation testing systems

336

Plasma nitriding and plasma nitrocarburizing of electroplated hard chromium to increase the wear and the corrosion properties

Coherent oscillator radiation is considered. A comparison is made with classical particle radiation with gauss distribution. Decay probability for coherent state in spontaneous radiation is estimated. The method suggested for describing harmonic oscillator allows to separate the effect of classical field radiation from quantum description of particle state within the framework of a self-consistent quantum mechanical problem.

1982-04-01

337

Hard spectator interactions in B {yields} {pi}{pi} at order {alpha}{sup 2}{sub s}

We have investigated the effect of plasma nitriding and plasma nitrocarburizing on the microstructure and properties of electroplated chromium. Plasma nitriding and plasma nitrocarburizing are applied to 15-100 [mu]m thick electroplated hard chromium coatings to increase both the wear and the corrosion resistance. The properties of the plasma-modified hard chromium layers are characterized by measuring the wear resistance with a Taber wear tester and the corrosion resistance with a salt spray fog test. Cyclic voltammetry is performed in a standard electrochemical cell using a 0.5 M H[sub 2]SO[sub 4] solution acidified to pH 0.3. The compound layer after plasma nitriding consists of CrN and Cr[sub 2]N with a maximum hardness of about 1100 HK[sub 0.01]. After plasma nitrocarburizing, Cr[sub 3]C[sub 2] and Cr[sub 7]C[sub 3] are formed. After plasma nitrocarburizing, the maximum hardness is increased up to ...

1999-02-01

338

Graded layer design for stress-reduced and strongly adherent superhard amorphous carbon films

In the present thesis I discuss the hard spectator interaction amplitude in B {yields} {pi}{pi} at NLO i.e. at O({alpha}{sup 2}{sub s}). This special part of the amplitude, whose LO starts at O({alpha}{sub s}), is defined in the framework of QCD factorization. QCD factorization allows to separate the short- and the long-distance physics in leading power in an expansion in {lambda}{sub QCD}/m{sub b}, where the short-distance physics can be calculated in a perturbative expansion in {alpha}{sub s}. Compared to other parts of the amplitude hard spectator interactions are formally enhanced by the hard collinear scale {radical}({lambda}{sub QCD}m{sub b}), which occurs next to the mb-scale and leads to an enhancement of {alpha}{sub s}. From a technical point of view the main challenges of this calculation are due to the fact that we have to deal with Feynman integrals that come with up to five external legs and with three ...

2007-05-31

339

Advanced Underground Gas Storage Concepts: Refrigerated-Mined Cavern Storage, Final Report

Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with high compressive stress in the order of 4 ...

1999-09-01

340

Study of particles trapped by a magnetic field

Over the past 40 years, cavern storage of LPG's, petrochemicals, such as ethylene and propylene, and other petroleum products has increased dramatically. In 1991, the Gas Processors Association (GPA) lists the total U.S. underground storage capacity for LPG's and related products of approximately 519 million barrels (82.5 million cubic meters) in 1,122 separate caverns. Of this total, 70 are hard rock caverns and the remaining 1,052 are caverns in salt deposits. However, along the eastern seaboard of the U.S. and the Pacific northwest, salt deposits are not available and therefore, storage in hard rocks is required. Limited demand and high cost has prevented the construction of hard rock caverns in this country for a number of years. The storage of natural gas in mined caverns may prove technically feasible if the geology of the targeted market area is suitable; and economically feasible if the cost and ...

1998-09-30

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

341

Study of Maytenus aquifolium martius chemical compounds stability face to ionizing radiations (x radiation and gamma radiation); Estudo da estabilidade dos compostos quimicos de Maytenus aquifolium martius frente a radiacao ionizante (X e Y)

A new type of radiation which occurs when particles are accelerated in the field of a longitudinal wave and in a transverse magnetic field is studied. The characteristics of such spontaneous radiation are obtained, and the influence of collective effects on the radiation is analyzed. The application of the findings to the theory of free electron lasers is discussed. 8 references.

1986-01-01

342

Risk of cancer after low doses of ionising radiation: retrospective cohort study in 15 countries

No abstract prepared

1996-09-01

343

Radiation therapy alone versus radiation therapy and chemotherapy in the management of Hodgkin's disease.

Objectives To provide direct estimates of risk of cancer after protracted low doses of ionising radiation and to strengthen the scientific basis of radiation protection standards for environmental,...Full Text Available

2005-07-09

344

Radiation exposure due to X-rays of the hip joint in babies

Forty-four patients with histologically proven Hodgkin's disease underwent initial treatment with extended-field radiation therapy. Nineteen of these patients also received combination chemotherapy....Full Text Available

1990-02-01

345

Multiscale registration of planning CT and daily cone beam CT images for adaptive radiation therapy

Exact anatomic knowledge about the location of the gonads and the application of corresponding measures of radiation protection are the preconditions for an efficient reduction of the danger of a possible genetic damage as a result of radiation exposition during X-ray examination of the hip joint of newborns. (VJ).

346

Lagranzheva dinamika kollektivnykh vzaimodejstvij v potokakh diskretnykh izluchatelej. (Lagrange dynamics of collective interactions in flows of discrete radiators).

Adaptive radiation therapy (ART) is the incorporation of daily images in the radiotherapy treatment process so that the treatment plan can be evaluated and modified to maximize the amount of radiation...Full Text Available

2009-01-01

347

Granite Countertops and Radiation | Radiation Protection | US EPA

Analytical method of theoretical simulation of collective hydrodynamic instabilities of intensive flows of discrete radiators, interacting with each other only through the coherent fields of their spontaneous radiation in corresponding media was suggested...

1989-01-01

348

Are natural radioactive materials dangerous

... Top of page Testing Radiation coming from granite countertops results from natural radioactive material in the granite. Identifying the presence and concentration of radioactive elements in granite requires expensive and sophisticated portable instruments or laboratory equipment. These instruments and equipment require proper calibration, and interpretation of ...

349

A radiator of electromagnetic waves with a combined shape of generatrices

The different radiation loads caused by natural and artificial radionuclides are compared in this paper. This examples will serve to illustrate that the problem of population exposure to radiation can only be solved in consideration of all components and to show which effects of the radiation from natural sources are of special importance in this connexion. (orig./AK).

1974-09-23

350

British Library Electronic Table of Contents (United Kingdom)

The problem of optimizing a horn radiator of electromagnetic waves for the reflection coefficient and the coefficient of transformation of the fundamental mode into higher order modes is solved. Optimization is performed by means of selecting a combined shape of the radiator generatrices.

2008-01-01

351

Using ICCD as a fast optical switch to measure harmonic super-radiation from an optical klystron in a storage ring

The medical exposures to ionizing radiations, it is a world priority in radiation protection

An optical klystron is built in the 800 MeV electron storage ring at University of Science and Technology of China for harmonic super-radiation generation. In single bunch operation mode the repetition rate of the spontaneous radiation pulses is about 4.533 MHz, and the repetition rate of the seed laser pulses is about 3 Hz, while the radiation pulse duration is 300 ps. For measuring harmonic radiation a high on/off ratio ICCD is used as an optical switch to reject spontaneous radiation pulses of high repetition rate

2001-07-01

352

x - NASA Technical Reports Server

The document published under A/63:46 and titled report of the scientific committee of United Nations for the study of ionizing radiations effects, gives the situation of the fifty sixth session of the committee that stood at Vienna from the 10. to 18. july 2008. In the chapter 3 of this report the writers summarize the strategic planning and the working program of the scientific committee for the period 2009-2013. They note that the committee worry about the inadequate means, particularly in personnel. The priorities for the given period will be the medical exposure of patients, the radiation levels and the effects of energy production, the exposure to natural radiation sources and the improvement of the understanding of the effects of the low doses radiation exposure. (N.C.)

353

VOLUME I11 IMISSION SYSTEM PERFORMANCE - NASA Technical Report ...

Mar 1, 2011 ... Radionuclide X-ray fluorescence analysis. 2: Detection of the X-ray fluorescence radiation excited by radionuclide radiation ...

354

Treatment of persons exposed in radiation accidents or nuclear explosions. Omhaendertagande av skadade vid radiakolyckor och kaernvapenexplosioner

Nov 8, 2010 ... Ihring Mission 11, the radiation dosimetry measurement system functioned normally and provided data on the Earth's trapped radiation belts ...

355

The importance of radiation quality for optimisation in radiology

The report gives general principles of treatment and care of casualties caused by radiation accidents or nuclear explosions.

1991-01-01

356

The biological aspects and behaviour of Heliothis virescens Fabricius adults from irradiated diapausal pupae

Selection of the appropriate radiation quality is an important aspect of optimisation for every clinical imaging task in radiology, since it affects both image quality and patient dose. Spreadsheet...Full Text Available

357

Tachyon Cerenkov radiation

... bollworm fertility gamma radiation genetic radiation effects life span mating

1974-07-22

358

Solar Cell Radiation Response near the Interface of Different ...

By proposing the four-dimensional, reciprocity transformations the appropriate condition for superluminal electromagnetic Cerenkov radiation is obtained by introducing the hypothesis that tachyons possess vector energy and scalar momentum.

1985-09-01

359

Relationship of Optical Coating on Thermal Radiation ...

... Solar Cell Radiation Respinnse Near the Interface o~f fliffprerv- ... 5 4. CALCUTl-ATED SOLAR CELL RLSPONSE FOR VARIOUS BASE MATERIALS ...

1971-11-01

360

References | Radiation Protection | US EPA

drical Enclosures Using a Numerical Ray Tracing Technique. NASA. TM-I02527, 1990 . Buckley, H.: Radiation from the Interior of a Reflecting Cylinder. Philos. ...

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

361

Radiation-response study of new radiation-hardened low-power TTL series

...References | Radiation Protection | US EPA This page provides links to the reference material on EPA's Radiation Protection Web site. U.S. EPA/...OAR/ORIA/Radiation Protection Division Jump to main content. Radiation Protection Contact Us Search: All EPA This Area You are here: EPA Home ... Radiation Protection References PageName Technical Users General Public Reporters Librarians Students/Teachers PROGRAMS TOPICS REFERENCES References The Reference Section provides general material that support the ...other sections of EPA's Radiation Protection Web site. You will find links within the information to related pages throughout the Radiation Protection , EPA ...

362

Radiation deamination of tetracycline. [Gamma radiation

(Dec 1971). United States Olson, RJ Alexander, DR Antinone, RJ Durham,

363

Radiation Damage Calculations for the FUBR and BEATRIX Irradiations of Lithium Compounds in EBR-II and FFTF

The fundamental product of tetracycline hydrochlorine gamma radiolysis was separated in its solid state. From the results of spectroscopic studies it has been established that it is des-N,N-dimethylaminotetracycline.

1980-01-01

364

Onclas U9800 - NASA Technical Report Server (NTRS)

Radiation Damage Calculations for the FUBR and BEATRIX Irradiations of Lithium Compunds in EBR-II and FFTF

1999-05-01

365

Numerical analysis of methane-air combustion considering radiation effect

the probability of its spontaneous radiation de-excitation increases. ... consider spontaneous radiation transitions. We will examine the ...

366

Numerical analysis of methane-air combustion considering radiation effect

Turbulent premixed methane-air combustion in a cylindrical chamber is numerically simulated considering radiation effect. Reaction rates are considered as minimum rates between Arrhenius rates and eddy break up rates. A five step reduced mechanism is used. Turbulent modeling is done via standard k-{epsilon} model imposed by empirical inlet boundary conditions. Source terms of energy equation consist of reaction rates and radiation effects. The discrete ordinate method (DOM) is employed to solve the radiative transfer equation (RTE) and the weighted sum of gray gas model (WSGGM) is imposed to consider radiation effect of non-gray gases. The results indicate that in the case of turbulent combusting flows, the effect of radiation of gases can affect the temperature and species concentrations. The numerical results obtained considering radiation effect are closer to ...

2008-12-15

367

Multifunctional, Boron-Foam Based Radiation Shielding

Turbulent premixed methane-air combustion in a cylindrical chamber is numerically simulated considering radiation effect. Reaction rates are considered as minimum rates between Arrhenius rates and eddy break up rates. A five step reduced mechanism is used. Turbulent modeling is done via standard k-? model imposed by empirical inlet boundary conditions. Source terms of energy equation consist of reaction rates and radiation effects. The discrete ordinate method (DOM) is employed to solve the radiative transfer equation (RTE) and the weighted sum of gray gas model (WSGGM) is imposed to consider radiation effect of non-gray gases. The results indicate that in the case of turbulent combusting flows, the effect of radiation of gases can affect the temperature and species concentrations. The numerical results obtained considering radiation effect are closer to the ...

2008-12-01

368

Mathematical Analysis of Three Free-Electron-Laser Issues

PROPOSAL NUMBER: 04 B3.09-7744. SUBTOPIC TITLE: Radiation Shielding to Protect Humans. PROPOSAL TITLE: Multifunctional, Boron-Foam Based ...

369

Enhanced coherent undulator radiation from bunched electron beams

... iFfficiency-en- enhanced spontaneous radiation at the free-electron- ... as enhanced spontaneous radiation at the free-electron-laser wavelength. ...

1990-09-30

370

Effect of gamma radiation and bag packaging materials on the development of Dermestes maculatus De Geer (Coleoptera: Dermestidae) in sword fish

When energetic bunches of electrons traverse an undulator field, they can spontaneously emit radiation both coherently and incoherently. Although it has generally been assumed that undulator radiation is incoherent at wavelengths short compared to the longitudinal size of the electron bunch, several recent observations have proved this assumption false. Furthermore, the appearance of coherent radiation is often accompanied by a significant increase in radiated power. Here we report observations of strongly enhanced coherent spontaneous radiation together with direct measurements, using transition radiation techniques, of the electron distributions responsible for the coherent emission. We also report demonstrated enhancements in the predicted spontaneous radiated power by as much as 6x10"4 using electron bunch compression. copyright 1996 ...

1995-09-28

371

ESR study in radiation damage in pyrimidines. 3-year comprehensive progress report

... EFFECT OF GAMMA RADIATION AND BAG PACKAGING MATERIALS ON

1998-06-01

372

Differences in synchrotron radiation induced gas desorption from stainless steel and aluminium alloy

General mechanisms of radiation damage to biomolecules was studied by using substituted pyrimidines, particularly barbituric acid derivatives.

373

Combined Radiation and Thermal Injury after Nuclear Attack

Differences in synchrotron radiation induced gas desorption from stainless steel and aluminium alloy

1990-01-01

374

Chinese Journal of Lasers (Selected Articles)

... Except for isolated radiation accidents over the ensuing years, little practical experience has been gained in the treatment of thermal injuries ...

2011-05-13

375

An evaluation of planning techniques for stereotactic body radiation therapy in lung tumors

... spontaneous radiation of amplifiers within a relatively w~de range of ... pulse widths are 20-30ns, while amplified spontaneous radiation pulse ...

1991-12-10

376

The influence of the binder on the properties of sintered glass-ceramics produced from industrial wastes

PurposeTo evaluate four planning techniques for stereotactic body radiation therapy (SBRT) in lung tumors.Methods...Full Text Available

2008-04-01

377

Stereoscopic observations of a solar hard x-ray flare with Ulysses, PVO, GRO and Yohkoh spacecraft

Sintered glass-ceramics were produced from coal fly ashes, red mud from aluminum production and silica fume. The capabilities of Tuncbilek fly ash and a mixture of Orhaneli fly ash, red mud and silica fume to be vitrified and devitrified by sintering process were investigated by means of scanning electron microscopy and X-ray diffraction analysis. To determine the effect of binder in the sintering technique, glass powders were pressed without or with the addition of polyvinyl alcohol. Owing to microstructural observations, density and hardness measurements, it can be said that physical properties and the hardness of the produced samples strongly depended on the crystallization degree of the samples. Toxicity characteristic leaching procedure test results showed that glass-ceramic samples produced by using sintering technique could be considered as nonhazardous materials. Chemical durability of the sintered glass-ceramic samples was also good. ...

2009-09-15

378

Properties and challenges of nanolayer coatings

Hard X-ray/gamma-ray spectrometers aboard two interplanetary spacecraft, Ulysses and Pioneer Venus Orbiter (PVO), and two near-Earth spacecraft, Yohkoh and Compton Gamma Ray Observatory (GRO/BATSE), are currently in operation. A unique set of circumstances have permitted the observation of the 15 November 1991 (2238 UT) flare by all the four instruments. This intense flare (GOES class X 1.5) was associated with the bright (3B) H-alpha flare located on the disk (S13, W19) in the active region 6919. At the time of the flare, the Ulysses and PVO spacecraft were located respectively 101[degree] and 52[degree] west of the Sun-Earth line. Thus the view angles for the PVO and Ulysses instruments were quite different from those of the near-Earth instruments on GRO and Yohkoh. The preliminary photon energy spectra observed by the four instruments at different times during the flare will be presented and their implications regarding the directivity of ...

1992-01-01

379

Phase formation in selected surface-roughened plasma-nitrided 304 austenite stainless steel

A systematic study was made on MoSi{sub 2}-based nanolayer coatings. Alternating layers with thickness 1-20 nm were prepared by sputtering. Nitrided MoSi{sub 2} has a very high crystallization temperature, >1000 C, and MoSi{sub 2}Nx (x=3-4) can be used as a stable second phase reinforcement or diffusion barrier coatings. Mechanical properties depend strongly on phase and morphology of the layers: hardness and modulus is significantly increased in the crystallization. The nanolayers have much higher hardness but lower modulus (which project higher toughness in the nanolayers). Wear resistance is improved with decreasing layer thickness. Single phase MoSi{sub 2}Nx (x=0-4.2) has a wide range of hardness and modulus with varying N content and annealing, suggesting the possibility of engineering MoSi{sub 2}Nx to produce different material properties for different mechanical applications. Most of this paper is made up of ...

1995-12-01

380

Observed energy dependence of Fano factor in silicon at hard X-ray energies

Direct current (DC) glow discharge plasma nitriding was carried out on three selected surface-roughened AISI 304 stainless steel samples at 833 K under 4 mbar pressures for 24 h in the presence of N{sub 2}:H{sub 2} gas mixtures of 50 : 50 ratios. After plasma nitriding, the phase formation, case depth, surface roughness, and microhardness of a plasma-nitrided layer were evaluated by glancing angle x-ray diffractogram, optical microscope, stylus profilometer, and Vickers microhardness tester techniques. The case depth, surface hardness, and phase formation variations were observed with a variation in initial surface roughness. The diffraction patterns of the plasma-nitrided samples showed the modified intensities of the {alpha} and {gamma} phases along with those of the CrN, Fe{sub 4}N, and Fe{sub 3}N phases. Hardness and case depth variations were observed with a variation in surface roughness. A maximum hardness of 1058 Hv ...

2008-04-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

381

Multilayered Nano-Microcomposite Ti-Al-N/TiN/Al_2O_3 Coatings. Their Structure and Properties

An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.

1999-03-01

382

Indentation plastic displacement field: Part II. The case of hard films on soft substrates

This paper presents the first results on formation and study of structure and properties of micro- and nanocomposite combined coatings. By means of modeling the deposition processes (deposition conditions, current density-discharge, plasma composition and density, voltage) we formed the three-layer nanocomposite coatings of Ti-Al-N/Ti-N/Al_2O_3. The coating composition, structure and properties were studied using physical and nuclear-physical methods. The Rutherford proton and helium ion backscattering, scanning electron microscopy with microanalysis, grazing incidence X-ray diffraction, as well as nanohardness tests (hardness) were used. Measurements of wear resistance and corrosion resistance in NaCl, HCl and H_2SO_4 solutions were also performed. For testing mechanical properties such characteristics of layered structures as hardness H, elastic modulus E: H"3/E"2 etc. were measured. It is demonstrated that the formed three-layer ...

2011-07-01

383

Indentation modulus and hardness in heteroepitaxial Al{sub x}Ga{sub 1{minus}x}P films

The plastic displacements around Knoop indentations made in hard titanium/aluminum multilayered films on soft aluminum alloy substrates have been studied. Indentations were cross-sectioned and imaged using the focused-ion-beam (FIB) milling and high-resolution scanning electron microscopy (SEM), respectively. The FIB milling method has the advantage of removing material in a localized region without producing mechanical damage to the specimen. The micrographs of the cross-sectioned indentations indicate that most of the plastic deformation around the indentation is dominated by the soft aluminum substrate. There is a very small change in the multilayered film thickness around the indentation{emdash}less than 10{percent}. The plastic deformation of the thin film resembles a membrane being deflected by a localized pressure gradient across the membrane. Stress-induced voids are also observed in the multilayered film, especially in the area around the indentation apex. ...

1999-06-01

384

Effects of composition and temperature on irradiation hardening of pressure vessel steels

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear interpolation.

1997-05-01

385

Effects of DC plasma nitriding parameters on microstructure and properties of 304L stainless steel

The effects of key metallurgical variables on the low fluence hardening in a set of A533B model steels were evaluated over a wide range of irradiation temperatures. Above about 163 degrees C hardening increased with higher copper and nickel contents, as is typical of the pressure vessel operating regime around 290 degrees C. However, at 121 degrees C the hardening was generally lower and unaffected by copper and nickel variations. This observation of decreased hardening with lower temperature (e.g. an open-quotes invertedclose quotes temperature dependence) is tentatively attributed to a reduced contribution of copper precipitation. Tensile data for a set of commercial steels with a range of (uncontrolled) compositions also showed minimal sensitivity to copper variations at 121 degrees C. Unlike the hardness data no systematic reductions in the yield stress increases were observed between 163 and 121 degrees C. However, the ultimate tensile strength did decrease at ...

1991-08-25

386

Development of a new wear-resistant material: TiC/TiNi composite

A wear-resistant nitrided layer was formed on a 304L austenitic stainless steel substrate by DC plasma nitriding. Effects of DC plasma nitriding parameters on the structural phases, micro-hardness and dry-sliding wear behavior of the nitrided layer were investigated by optical microscopy, X-ray diffraction, scanning electron microscopy, micro-hardness testing and ring-on-block wear testing. The results show that the highest surface hardness over a case depth of about 10 #mu#m is obtained after nitriding at 460 deg. C. XRD indicated a single expanded austenite phase and a single CrN nitride phase were formed at 350 deg. C and 480 deg. C, respectively. In addition, the S-phase layers formed on the samples provided the best dry-sliding wear resistance under the ring-on-block contact configuration test.

2009-03-01

387

Quantum information processing in nanostructures[Quantum optics; Quantum computing

In this work, an attempt was made to develop a novel type of wear-resistant composite employing a TiNi alloy matrix reinforced by hard particles. Titanium carbide was chosen as the reinforcing phase because of its high hardness and TiNi alloy as the matrix due to its pseudoelasticity and good toughness. TiC particles may sustain external load, while the TiNi matrix may accommodate deformation, absorb impact energy and retain the hard particles. Such a combination is expected to lead to an enhanced wear resistance, compared to TiNi alloy. As a matter of fact, some efforts were previously made to develop TiNi-matrix composite reinforced by ceramic particles. However, the emphasis of those studies was put on effects of the reinforcing particles on the phase transformation behavior, shape memory effect and some mechanical properties of the composite; no attempt was made to explore the potential benefit of the material for wear ...

1999-10-22

388

Valence-band offsets at the Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P-ZnSe(001) lattice-matched interface

Since information has been regarded os a physical entity, the field of quantum information theory has blossomed. This brings novel applications, such as quantum computation. This field has attracted the attention of numerous researchers with backgrounds ranging from computer science, mathematics and engineering, to the physical sciences. Thus, we now have an interdisciplinary field where great efforts are being made in order to build devices that should allow for the processing of information at a quantum level, and also in the understanding of the complex structure of some physical processes at a more basic level. This thesis is devoted to the theoretical study of structures at the nanometer-scale, 'nanostructures', through physical processes that mainly involve the solid-state and quantum optics, in order to propose reliable schemes for the processing of quantum information. Initially, the main results of quantum information theory and quantum computation are ...

2002-07-01

389

Unsymmetrically substituted n-type perylene bisimides with liquid crystalline properties

The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the possibility of using ...

1997-01-01

390

Some computer simulations of semiconductor thin film growth and strain relaxation in a unified atomistic and kinetic model

Perylene bisimides (PBIs) represent an important class of organic n-type semiconductors exhibiting a relatively high electron affinity among large-band-gap materials. Herein synthesis and characterization of several unsymmetrical N-substituted PBI dyes is presented and the thermotropic behavior, which is strongly affected by the respective N-substituents was investigated. Two different series of highly soluble and fluorescent derivatives have been synthesized: (1) PBIs bearing swallow-tailed alkyl chains, different in size or (2) one swallow-tailed alkyl chain and one branched oligoethylenglycolether. Synthesis of these PBIs is generally feasible by two distinct divergent synthesis approaches. Thermotropic behavior was studied by DSC, POM and XRD measurements. Inherent {pi}-{pi} interactions between cofacially orientated perylene molecules and the elliptic shape of the molecule favor the ordering in columns and self-organized architectures. Among them hexagonal ...

2009-07-01

391

Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs

An overview is provided of an evolving atomistic and kinetic model of semiconductor growth that unifies the main features of strain relaxation in low and high lattice misfit heteroepitaxy. The model reveals a kinetic pathway for dislocation formation during growth with little or no energy cost at low misfits, thus providing a way out of the longstanding dilemma of too high dislocation nucleation energies predicted by classical theories of the equilibrium behavior of a fixed number of particles at low misfits. The essential kinetic process underlying the model are identified on the basis of comparison of the predictions of kinetic Monte-Carlo simulations of growth with real-time or in-situ data obtained in such experiments as reflection high-energy electron diffraction (RHEED) and scanning probe microscopy (SPM). Relative significance of these atomistic kinetic processes is shown to naturally lead to strain relaxation via defect initiation at low misfits while ...

1996-12-31

392

Passivity of 316L stainless steel in borate buffer solution studied by Mott-Schottky analysis, atomic absorption spectrometry and X-ray photoelectron spectroscopy

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on the surface of a ...

2006-10-15

393

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon

Research highlights: {yields} The polarization curve of 316L SS possesses five turning potentials in passive region. {yields} Films formed at turning potentials perform different electrochemical and semiconductor properties. {yields} Dissolutions and regenerations of passive film at turning potentials are obtained by AAS and XPS. {yields} Turning potentials appearing in passive region are ascribed to the changes of the compositions of the passive films. - Abstract: The passivity of 316L stainless steel in borate buffer solution has been investigated by Mott-Schottky, atomic absorption spectrometry (AAS) and X-ray photoelectron spectroscopy (XPS). The results indicate that the polarization curve in the passive region possesses several turning potentials (0 V{sub SCE}, 0.2 V{sub SCE}, 0.4 V{sub SCE}, 0.6 V{sub SCE} and 0.85 V{sub SCE}). The passive films formed at turning potentials perform different electrochemical and semiconductor properties. ...

2010-11-15

394

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology for the neutron ...

2007-10-15

395

Investigation of novel organic n-type semiconductors in photovoltaic bulk heterojunction

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology for the neutron ...

2007-10-01

396

Experimental and theoretical studies of coherent and nonthermal processes in semiconductors probed by femtosecond laser techniques

Two novel organic n-type semiconductors are investigated due to their function as electron acceptor for applications in organic electronic devices to widen the knowledge of how molecule structure influences the excitation processes in organic electronics. Bispyrenylfullerene and Octadecyl-Capronacidesterfullerene are C{sub 60} derivates with sidechains more featured compared to the commonly used[6,6] phenyl-C{sub 61}-butyric acid methyl ester (PCBM). In bulk heterojunction devices regioregular poly(3-hexylthiophene) (P3HT) was used as donor. The materials, pristine and in blend, were studied in view of light absorption, their quenching abilities of the P3HT photoluminescence as well as excited states. Furthermore, the spin state of the excited states was determined by light-induced electron spin resonance. Combining these complimentary experimental techniques, we obtained information on the generation of excited states, their nature, and the efficiency of the ...

2009-07-01

397

Europium oxynitride ferromagnetic semiconductors

The coherent interaction of femtosecond laser pulses and a thin CdSe sample is investigated both experimentally and theoretically. Observation of coherent phenomena in semiconductors is very rare because the incoherent processes occur in the femtosecond time domain in these materials. One example of such a phenomena is the so called optical Stark effect of exciton where a blue shift of the exciton resonance occurs as a result of pumping below the bandgap. The coherent effects involving band-to-band and also exciton transitions. Using femtosecond transmission measurements clear evidence was observed for coherent interference effects of the light field and the driven material polarization. These interferences manifest themselves as oscillatory structures in the differential transmission spectra. The oscillatory features are explained by comparison with a semiclassical theory. Examples of the computed results are presented for different time delays between probe and ...

1987-01-01

398

Electronic structure of passive films formed on molybdenum-containing ferritic stainless steels

At room pressure and temperature the system EuOsub(1-x)Nsub(x) has two solid-solubility ranges, each with the NaCl structure: for 0 =< x =< 0.30 the system is ferromagnetic and semiconducting above the Curie temperature; for 0.92 =< x <1 it is metallic. Conductivity and Seebeck voltages indicate intrinsic behaviour above 310 K with an energy gap that decreases with increasing x for 0 =< x =< 0.30. Magnetic susceptibilities are consistent with 4f"6 configurations at x europium ions per molecule and a ferromagnetic Curie temperature Tsub(C) that increases with x. Low-temperature transport measurements were made only for 0.20 =< x =< 0.30: a minimum in the electrical conductivity, approximately 30 K above Tsub(C) correlates well with the onset of an anomalous low-temperature crystal contraction and with deviations from a Curie-Weiss law typical of short-range magnetic order. Below Tsub(C) there is a metal-to-semiconductor transition similar to ...

1978-01-01

399

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

The effect of molybdenum on the electronic structure of the passive films formed on ferritic (Fe-Cr and Fe-Cr-Mo) stainless steels is examined by capacitance and photoelectrochemical measurements. The capacitance study is supported by a mathematical analysis of the Schottky barrier developed at the semiconductor-electrolyte interface in the case of a semiconductor with multiple bulk electronic states in the bandgap. The numerical simulations, based on the more general Mott-Schottky relation proposed, are in good agreement with the experimental results. It can be concluded that the capacitance behavior of the passive films is related to the contributions of a shallow donor level very close to the conduction band and a deep donor level at about 0.4 eV below the conduction band. The addition of molybdenum decreases the donor density of the deep level. Photoeffects observed for subbandgap photon energies reveal that this deep donor level behaves ...

1996-10-01

400

Development of transition metal semiconductors for photoelectrolysis of water. Final report

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

2004-09-01

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401

Development of GaInAsP for GaInAsP/Ge cascade solar cells

This report discusses the development of transition metal oxide semiconductors for photoelectrolysis of water. More specifically, it involves preparation of TiO/sub 2/ films by sputtering and evaluating their physicochemical characteristics primarily as they relate to the behaviour of the films as photoanodes. Impedance, photoelectrochemical, and photoconduction properties of TiO/sub 2/ films sputtered in pure O/sub 2/ onto heated substrates have been determined as a function of O/sub 2/ pressure during sputtering, film thickness, Pt overcoating, and cathodic treatment. The capacitance data before cathodic treatment are of the form expected. The capacitance is essentially independent of potential, while for potentials increasingly cathodic of this value, the capacitance increases very rapidly. Cathodic treatment alters the impedance characteristics of the films but leads to either no detectible change in their photoelectrochemical properties or to an increase in ...

1981-03-27

402

Current trends in ion implantation

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. A proposed structure for the GaInAsP/Ge cascade cell is also given.

1992-12-01

403

Comparative study of phase stability and film morphology in thin-film M/GaAs systems (M = Co, Rh, Ir, Ni, Pd, and Pt)

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing ...

2001-07-01

404

Characterization of 3D thermal neutron semiconductor detectors

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are ...

1987-09-01

405

Band parameters for III - V compound semiconductors and their alloys

Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties of 3D structures. Charge collection efficiencies in silicon ...

2007-06-11

406

Angular sensitivity distribution of detectors for BNCT

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American Institute of ...

2001-06-01

407

RF plasma nitriding of severely deformed iron-based alloys

The research on the therapy of brain tumors and others by the thermal neutron irradiation using research reactors is to kill tumor cells by accumulating boron at a tumor part, and using {alpha} particles and {sup 7}Li generated by {sup 10}B(n, {alpha}){sup 7}Li reaction of thermal neutrons, which is known as boron neutron capture therapy (BNCT). In Japan Atomic Energy Research Institute, the medical irradiation facility was installed in the thermal neutron column of the JRR-2, and as of March, 1994, 22 cases of irradiation have been carried out. In order to monitor the variation of thermal neutron flux during irradiation, the real time measurement using a simultaneous monitor is carried out, but there is the variation of measured values in the Si semiconductor, p-n junction detector possibly due to its direction dependence. The experiment was carried out to quantity the direction dependence of the detector by using the neutron radiography facility at the JRR-3M. Si ...

1995-03-01

408

Properties and performance of new metastable Ti-B-C-N hard coatings prepared by magnetron sputtering

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10{sup -5} bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of {epsilon} and {gamma}' nitrides in the compound layer, with a preferential formation of {gamma}' at the expense of the {alpha}-phase at the ...

2003-05-15

409

Influence of tempering on microstructure and hardness of high-temperature 9%Cr-steels; Einfluss des Anlassens auf Gefuege und Haerte warmfester 9%Cr-Staehle

Thin films of new metastable materials from the system Ti-B-C-N were deposited on metallic substrates by d.c. magnetron sputtering in different Ar+N{sub 2} atmospheres. The multiphase compound targets used were based on various compositions on the TiC-TiB{sub 2} and TiB{sub 2}-C tie lines of the Ti-B-C phase diagram. The structure and chemical composition of the films were characterized by electron microprobe analysis, depth profiling Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy. The hardness, critical load of failure and the tribological behavior of the coatings were investigated. Superhard single-phase crystalline metastable Ti-B-C-N layers with hardness values exceeding 5000 HV{sub 0.05} and extremely low sliding wear against 100Cr6 and Al{sub 2}O{sub 3} counterparts could be produced by reactive sputtering of various TiC-TiB{sub 2} targets in Ar+N{sub 2} atmospheres with low nitrogen flows. In the case ...

1995-10-01

410

Visible semiconductor lasers with the AlGaInP materials system

The influences of temperature and duration of tempering on hardness and microstructure were investigated at high-temperature martensitic and low-carbon steels with 9% chrome and the further alloying elements molybdenium, vanadium, niobium and partially tungsten. After austenitizing and subsequent air cooling the steels were tempered at temperatures below, at and above Ac{sub 1b} for different times and finally a hardness test was performed. Making use of the temperature dependence of the hardness tempering diagrams were constructed and the Hollomon-Jaffe-Parameter on the three steels was determined within its application limits. Micrographs of the structure shows the formation of the carbides and the martensite. At tempering temperatures below Ac{sub 1b} a decrease of hardness occurs, above Ac{sub 1b}, a hardness rise due to the partial austenitizing was obtained. While hardening ...

1999-06-01

411

Transient optical and electrical effects in polymeric semiconductors

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

1988-11-02

412

Sulfuric acid/hydrogen peroxide rinsing study

Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to expanding the ...

2009-05-28

413

Solid state and materials research

Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the semiconductor industry to remove organic contaminants from wafer surfaces. This viscous solution is very difficult to rinse off water surfaces. Various rinsing conditions were tested and the resulting residual acid left on the water surface was measured. Particle growth resulting from incomplete rinse is correlated with the amount of sulfur on the wafer surface measured by Time of Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). The amount of sulfur on the wafer structure after the rinse step is strongly affected by the wafer film type and contact angle prior to the SPM clean.

1995-12-01

414

Solid State Photovoltaic Research Branch

Within about 10 years, microelectronic devices will be made with more than a billion (10"9) electronic components per chip. To implement such a sophisticated technology it will be essential to have a fundamental understanding of the solid state interaction between the different materials in thin film semiconductor structures. This is the main purpose of this research program. Characterization and analysis is carried out mainly by Rutherford backscattering spectrometry and channelling using accelerated nuclear particles from the Van de Graaff accelerator, while radioactive isotopes provide information about interaction mechanisms. 6 figs., 1 ref.

415

Real time neutron dosemeter response calculations

This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.

1990-09-01

416

Position-sensitive spectroscopy of 252Cf fission fragments

The response of a real time neutron dosemeter using a thin LiF target sandwiched between tow parallel surface barrier semiconductor detectors is studied for different neutron distributions and different angles of incidence. Calculations of the response function defined for a simultaneous detection by the two detectors of the particles emitted when the reaction "6Li(n,t)#alpha# occurs in the target are fulfilled by geometrical considerations of the reaction kinematics and the differential cross section variations. Finally, the efficiency of the studied detection systems is analyzed for dosimetric uses. (author).

1996-04-01

417

Multielement XRF-analysis of blood from patients with dilated cardiomyopathy

The fission fragments from spontaneous fission of 252Cf have been measured with the spectrometric and position-sensitive semiconductor pixel detector Medipix2. Fragments are identified by pattern recognition of clusters generated in the Medipix2 pixel matrix sensor upon heavy particle hit. From analysis of cluster area, the distribution of kinetic energy of fission fragments is obtained. Together with a novel USB readout interface, the Medipix2/USB system operates as active nuclear emulsion in single-quantum and on-line tracking mode.

2007-05-11

418

Identification of elements in plant drugs and their water infusion using X-ray fluorescence analysis

Radionuclide x-ray fluorescence analysis was used for the determination of Fe, Zn, Br and Rb levels in whole blood from dilated cardiomyopathy patients and from a control group. The XRF-system consisted of a radionuclide source "1"0"9Cd, a semiconductor Si/Li detector connected to a multichannel analyzer. Fe content in blood of patients was significantly lower than that of the control. Zn content showed no deviation from normal range. Values for Br and Rb in patients highly exceed the range reported for them. (author) 4 tabs.; 9 refs.

1991-03-01

419

High performance AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing

The present work gives preliminary results of analysis of drug mixtures (NEPHROSAL tea bag) and its water infusion. In a sample of dried drugs the elements K, Ca, Mn, Fe, Ni, Cu, Zn, Br, Rb, Sr, Pb were identified, whereas in their water infusion only Ca, Mn, Zn and Sr were found. The method applied was radionuclide X-ray fluorescence analysis using a radionuclide source "1"0"9Cd, a Si/Li semiconductor detector and a multichannel analyzer Canberra 8100. (author) 6 refs.; 3 figs.

8100-01-01

420

High efficiency planar MCLEDs

This paper describes the performance of AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 #mu#m source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

2010-03-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

421

Electronic structure and properties of boron phosphide and boron arsenide

The physics of microcavities have been a subject of intense study over the past 25 years. This work stimulated a large body of experimental and theoretical work on the optimization of the light extraction properties of light-emitting diodes. Not only has this led to the current high efficiency microcavity LEDs but also to the high brightness LEDs based on other approaches, which are presently available on the market. An overview of the state of the art of planar semiconductor microcavity LEDs will be presented. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2005-09-01

422

Electron microscopy and X-ray diffraction study of AlN layers

The composite wave variational version of the APW (augmented plane wave) method is used to obtain the electronic band structure of the compounds boron phosphide and boron arsenide at the high symmetry points #GAMMA#, X, and L. The tight binding interpolation scheme of Slater and Koster is used to calculate the rest of the band structure. The results show that both these materials are indirect band gap semiconductors. The density of states, and the imaginary part of the dielectric constant is also calculated. The theoretical results are compared with the reported experimental and theoretical data. (author).

423

Determination of Mn, Fe, Cu, Zn, and Pb in particulate matter, raw and final materials of a brick factory by radionuclide X-ray fluorescence analysis

AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor layers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterization was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements. (author)

2001-09-23

424

Controllable growth and magnetic properties of nickel nanoclusters electrodeposited on the ZnO nanorod template

Radionuclide X-ray fluorescence method with a Si/Li semiconductor detector and "2"3"8Pu exciting source was used in the study of Mn, Fe, Cu, Zn, and Pb content of solid emissions, raw and final materials of a brick factory. From the point of view of metal content, the working environment if the brick factory is safe for workers. (author) 2 refs.; 2 figs.; 1 tab.

1994-01-01

425

Continuous wave operation (77 K) of yellow (583. 6 nm) emitting AlGaInP double heterostructure laser diodes

The ZnO nanorods were used as a template to fabricate nickel nanoclusters by electrodeposition. The ZnO nanorod arrays act as a nano-semiconductor electrode for depositing metallic and magnetic nickel nanoclusters. The growth sites of Ni nanoclusters could be controlled by adjusting the applied potential. Under -1.15 V the Ni nanoclusters could be grown on the tips of ZnO nanorods. On increasing the potential to be more negative the ZnO nanorods were covered by Ni nanoclusters. The magnetic properties of the electrodeposited Ni nanoclusters also evolved with the applied potentials.

2009-12-09

426

Conception, realization and test of an electronic Si-LiF-Si sensor for neutron spectrometry and dosimetry

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

1986-03-03

427

Chemical sensitivity of Mo gate Mos capacitors

The aim of this thesis is the study of new systems devoted to the real time neutron spectrometry and dosimetry. The microelectronics technologies have been used to research a micro system integrating sensor and data processing in real time. The multi range sensor is based on many pair of semiconductor diodes placed face to face and covered by lithium fluoride. The sensor has been designed and its behavior has been simulated. Its operating in reference neutrons beams has been analyzed. (A.L.B.)

1998-01-01

428

Band structure and electron-electron interaction in samarium monosulphide

Mo gate Mos capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125 C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 x 10"1"1 cm"-"2 e-v"-"1, in pure nitrogen, to 2.5 x 10"1"1 cm"-"2 e-v"-"1 in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. (Author)

429

Transverse Imaging of the Proton in Exclusive Diffractive pp Scattering

The method of augmented plane wave (APW) is used to obtain the band structure of the SmS compound in the semiconductor and metal phases. The noncentral part of the Coulomb electron-electron interaction is taken into account in the first order perturbation theory. In this case the radial part of the wave APW-function is taken as a zero approximation function. A multiplet structure of the excited configuration f"5d, which provides a good description of the X-ray photoelectron spectrum and optical spectrum epsilon_2(#omega#), is obtained. The configuration fd is calculated for the interpretation of the optical absorption spectrum of the samarium monosulfide metal phase. (author).

430

The significance of local hard zones on the outside of pipeline girth welds: Further studies

In a forthcoming paper we describe a new approach to rapidity gap survival (RGS) in the production of high-mass systems (H = dijet, Higgs, etc.) in exclusive double-gap diffractive pp scattering, pp -> p + H + p. It is based on the idea that hard and soft interactions are approximately independent (QCD factorization), and allows us to calculate the RGS probability in a model-independent way in terms of the gluon generalized parton distributions (GPDs) in the colliding protons and the pp elastic scattering amplitude. Here we focus on the transverse momentum dependence of the cross section. By measuring the ''diffraction pattern'', one can perform detailed tests of the interplay of hard and soft interactions, and even extract information about the gluon GPD in the proton from the data.

2006-04-20

431

The effect of solutes on defect distributions and hardening in ion-irradiated model ferritic alloys

The NACE MR-01-75 standard imposes a restriction of 22HRC maximum for regions of a pipeline girth weld that are not in direct contact with H[sub 2]S containing environments. TWI have demonstrated in an earlier project for the Pipeline Research Committee (PRC) that it may be permissible to relax this maximum hardness requirement. Such a relaxation, which already exists in the BS4515: 1984 standard, offers potential benefits when applied to the capping pass and heat affected zone of a pipeline girth weld. This report presents additional data to supplement that obtained in a previous PRC project conducted at TWI. Further pipe materials with differing pipe wall thicknesses have been welded, exposed to an internal H[sub 2]S containing environment and examined for sulphide stress corrosion cracking.

1991-10-01

432

TEM and ToF-SIMS studies on the corrosion behavior of vanadium and chromium containing WC-Co hard metals in alkaline solutions

A series of nine model ferritic alloys were ion irradiated at #propor to#300 C using 2.5 MeV He ions to a dose of 1.4 x 10"2"1 ion/m"2, which corresponds to #propor to#0.1 dpa at a depth of 2 #mu#m and #propor to#3.5 dpa at the peak damage region which occurs at about 4 #mu#m deep. The resultant changes in hardness as a function of depth were measured using a Nanoindenter "t"r"a"d"e"m"a"r"k. TEM was used to investigate the defect distributions. The effect of various solutes, Cu and N in particular, but Mn and Ti as well, on the change of hardness and the defect distribution due to the ion irradiation are discussed. (orig.).

433

British Library Electronic Table of Contents (United Kingdom)

The corrosion behavior of hard metals with VC and Cr3C2 grain growth inhibitors was investigated in alkaline solutions by electrochemical methods. The two inhibitors have opposite effects on the corrosion behavior: Cr3C2 significantly improves the corrosion behavior, whereas VC-containing alloys show a poor resistance. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and analytical transmission electron microscopy (TEM) analyses of the distributions of Cr and V in the composite material, as well as in the surface layers formed during corrosion were employed to clarify the influence of these elements on the corrosion behavior. The measurements showed that VC is precipitated mostly along the WC/binder interface after the liquid-phase sintering process, while Cr3C2 is almost homogene...

2011-01-01

434

RXTE observations of Cas A

Plasma nitriding of Fe-18Cr-9Ni in the range of 723-823 K

Rossi X-ray Timing Explorer (RXTE) observations of the bright supernova remnant Cas A have revealed a hard power law component above 10 keV in addition to two thermal components inferred from ASCA measurements of the many line centroids from low-Z elements. The power law can be shown to be consistent with synchrotron emission from radio to hard x-rays by electrons of up to 4 x 10"1"3 eV. Measurement of the 1157 keV line by CGRO from "4"4Sc in the chain of decay of "4"4Ti predicts that the two "4"4Ti lines at 68 and 78 keV should appear at the CGRO intensity. RXTE has placed upper limits on such lines that are marginally consistent with the CGRO measurement. Implications of these results on sites for cosmic ray acceleration and nucleosynthesis are discussed.

1999-01-01

435

Plasma nitriding of AISI 304 steel

To clarify the mechanism of plasma nitriding, the authors examined the optical microstructure, the hardness, the precipitation, and the concentration of dissolved nitrogen in Fe-18Cr-9Ni nitrided using plasma in the range of 723-823 K. Compared with ammonia-gas nitriding, the features of plasma nitriding are the formation of small chromium-nitride precipitates (CrN), the absence of an externally nitrided layer, the high concentration of dissolved nitrogen, and the high hardness (HV = 1,200). The diffusion coefficient of nitrogen in the present alloy was determined using the growth rate of the internally nitrided layer, based on calculations used in internal oxidation. Plasma- and gas-nitriding were also compared with respect to the growth rate of the nitrided layer.

1991-08-01

436

Partnership agreement signed for polymer-additive project

In the present investigation, the properties of plasma nitrided AISI 304 steel were studied by changing the presence of nitrogen in the gas mixture. The plasma nitriding was performed at temperature -560 deg C, pressure -4 mbar and duration 24 hours. The nitrided samples were characterized by evaluating the phase composition, micro hardness, and diffusion layer thickness. The phase analysis indicates the mixed phases of CrN and Fe_3N, Fe_3N and Fe_4N which has the highest intensity. The results show the glow discharge plasma nitriding in presence of N_2 (80 vol. %) and H_2 (rest) produced higher hardness as well as higher case depth. (author)

2004-09-01

437

On plasma nitriding of steels

A polymer-based additive that permanently reduces hardness in wood electrical transmission poles treated with a chromated copper arsenate (CCA) preservative, has been developed by a team of IREQ researchers. A three-phase project is being funded by Hydro-Quebec to evaluate the additive's effect on full-size hydro poles subjected to actual climatic conditions. The evaluation project is designed to test the CCA and the additive's degree of retention by analyzing the hardness measurements against climbing tests, and the washing resistance of the chromium, copper and arsenate in the CCA/polymer-additive treatment. CCA-treated poles will be used for reference. Accelerated aging tests to characterize the polymer's resistance to UV rays will also be part of the validation program.

1999-12-31

438

Nanostructuring and hardening of LiF crystals irradiated with 3?15 MeV Au ions

With the aim of optimizing the nitriding process, experimental studies of the plasma nitriding of four selected steels were carried out, using a d.c. glow discharge. The process parameters were varied systematically. By means of transmission and scanning electron microscopy and X-ray diffraction, the microstructures, including the thicknesses of the compound zones and the diffusion zones of the nitrided steels, were obtained. Using cross-sectional samples and a micro-Vickers indenter, hardness depth profiles were also obtained. From the time and temperature dependences of the hardness profiles, effective diffusion constants and corresponding activation enthalpies were obtained. Furthermore, in an attempt to shed some light on the atomistic nitriding mechanisms, the glow discharges were studied by measuring energy spectra of the energetic ions hitting the cathode (the steel test specimens). It was shown that an increase of the mean energy of the ...

2000-02-01

439

British Library Electronic Table of Contents (United Kingdom)

Modifications of the structure and mechanical properties in LiF crystals irradiated with MeV-energy Au ions have been studied using nanoindentation, atomic force microscopy and optical spectroscopy. The nanostructuring of crystals under a high-fluence irradiation (above 1013 ions/cm2)?was?observed. Nanoindentation tests show a strong ion-induced increase of hardness (up?to 150?200%), which is related to the high volume concentration of complex color centers, defect aggregates, dislocation loops and grain boundaries acting as strong barriers for dislocations. From the?depth profiling of the hardness and energy loss it follows that both nuclear and electronic stopping mechanisms of MeV Au ions contribute to the creation of damage and hardening. Whereas the electronic stopping is dominating i...

2011-01-01

440

Mode of Communication, Perceived Level of Understanding, and Perceived Quality of Life in Youth Who Are Deaf or Hard of Hearing

British Library Electronic Table of Contents (United Kingdom)

Given the important role of parent-youth communication in adolescent well-being and quality of life, we sought to examine the relationship between specific communication variables and youth perceived quality of life in general and as a deaf or hard-of-hearing (DHH) individual. A convenience sample of 230 youth (mean age = 14.1, standard deviation = 2.2; 24% used sign only, 40% speech only, and 36% sign + speech) was surveyed on communication-related issues, generic and DHH-specific quality of life, and depression symptoms. Higher youth perception of their ability to understand parents' communication was significantly correlated with perceived quality of life as well as lower reported depressive symptoms and lower perceived stigma. Youth who use speech as their single mode of communication ...

2011-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

441

Mechanical properties of SiAlON glass surface after swift heavy-ion bombardment

Magnetic properties of Fe-Co-Mo-Cu-B nanocrystalline ribbons with stressing surfaces

A Y-Mg-Si-Al-O-N glass was submitted to swift heavy-ion bombardment at GANIL (Caen, France) and the influence of irradiation on the mechanical properties was studied. The mechanical properties of the glass were characterized both before and after irradiation. Changes in hardness, elastic modulus and fracture toughness of the near-surface irradiated layer were determined using indentation techniques. SRIM calculations allowed to estimate the ions penetration range and the energy deposition relative to electronic and nuclear interactions, which can be correlated to the experimental damaged depth. Meyer's hardness and Young's modulus decrease by about 30 %, while fracture toughness is increased by more than 40 %. (authors)

442

British Library Electronic Table of Contents (United Kingdom)

Magnetic properties of Fe-Co-Mo-Cu-B alloy system with Co up to 26at.% were investigated. After proper thermal treatment, the nanocrystalline grain remains tiny, the density hardly increases, but the room-temperature saturation attains 1.5T mainly due to a high enough Curie temperature. The generally observed slant hysteresis loops point to ribbon surfaces, which stress the ribbon interior and induce a specific magnetoelastic contribution to hard-ribbon-axis magnetic anisotropy even after vacuum annealing. The effect does not come from cobalt but rather from the lack of silicon. Partial removal of the surfaces resulted in a decrease of the loop tilt.

2011-01-01

443

Hydrogen in titanium alloy with 16 at% Mo

Experimental and Numerical Study of Shot Peened Thin Hard-Coated Components

The effect of various hydrogen concentrations on the crystal lattice period and the hardness of titanium alloy was examined, the alloy containing about 16 at.% Mo (27.5 wt. % Mo) and having #beta# structure. The peculiar features of the mechanism of plastic deformation of the alloy were studied after adding hydrogen to it. A dependence of the crystal lattice period on the concentration of hydrogen was obtained for TixMoxH_2 alloy. It has been established that the hardness of the Ti-Mo alloy does not change when hydrogen is added to it. The presence of hydrogen introduces changes into the mechanism of deformation of #beta#-titanium alloy. The configuration of the inverse pole figures after rolling proves that the transverse slip process in an alloy with hydrogen is hampered, and that the coplanar slip process is developing in it.

444

British Library Electronic Table of Contents (United Kingdom)

A test bench was designed and assembled to carry out impact tests on samples and components. The system allows simple and rapid adjustment of the test parameters, such as the shot size and air pressure, with good repeatability of the results. Tests on steel and light alloys were carried out under both as-produced condition and on thin hard-coated samples. Significant reductions in dimple dimensions were seen after coating. FE models simulating the experiments overestimated the dimple depths, although the parameter trend was satisfactorily captured. The residual stresses from coating and shot peening determined numerically are believed to have been proven effective against fatigue.

2011-01-01

445

Estimation of dietary intake of ochratoxin A from liquorice confectionery

British Library Electronic Table of Contents (United Kingdom)

Ochratoxin A (OTA) was analyzed from 44 liquorice confectionery samples using immunoaffinity cleanup and liquid chromatography coupled with fluorescence detection. The presence of OTA was confirmed by methyl-ester derivatization. Liquorice confectionery samples were purchased from different retail outlets and supermarkets in Spain during 2007-2008, 16 of hard candies and 28 of soft candies. The incidence of OTA varied between 75% and 39% and mean ranged from 2.96 to 0.34mg/kg for hard and soft candies, respectively. Assuming a total mean value of 1.29mgOTA/kg sweet and a consumption of about 1.2g liquorice sweets per day, an OTA weekly uptake of 11ng was obtained, or, based on a total body weight of 30kg for a child consuming these sweets regularly, a weekly intake of 0.37ng/kg body weight...

2009-01-01

446

Enhancement of PVC/ENR blend properties by poly(methyl acrylate) grafted oil palm empty fruit bunch fiber

British Library Electronic Table of Contents (United Kingdom)

Effect of oil palm empty fruit bunch (OPEFB) fiber and poly(methyl acrylate) grafted OPEFB on several mechanical properties of poly(vinyl chloride)/epoxidized natural rubber (PVC/ENR) blends were studied. The composites were prepared by mixing the fiber and the PVC/ENR blends using HAKEE Rheomixer at the rotor speed of 50 rpm, mixing temperature 150degreeC, and mixing period of 20 min. The fiber loadings were varied from 0 to 30% and the effect of fiber content in the composites on their ultimate tensile strength (UTS), Youngs modulus, elongation at break, flexural modulus, hardness, and impact strength were determined. An increasing trend was observed in the Youngs modulus, flexural modulus, and hardness with the addition of grafted and ungrafted fiber to the PVC/ENR blends. However the i...

2008-01-01

447

Effects of various gas mixtures on plasma nitriding behavior of AISI 5140 steel

Duplex surface treatment of AISI 1045 steel via plasma nitriding of chromized layer

AISI 5140 steel was plasma nitrided at various gas mixtures of nitrogen, hydrogen, and argon to investigate the actions of hydrogen and argon on plasma nitriding. The structural and mechanical properties of ion-nitrided AISI 5140 steel have been assessed by evaluating composition of phases, surface hardness, compound layer thickness, and case depth by using X-ray diffraction (XRD), microhardness tests, and scanning electron microscopy (SEM). It was found that the growth of compound layer can be controlled and the diffusion improved when the gas mixture includes H_2 gas. Additionally, it was determined that the amount of Ar in dual gas mixture must be at 20% minimum to obtain distinctive surface hardness and compound layer thickness.

2002-10-01

448

British Library Electronic Table of Contents (United Kingdom)

In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273K for 5h. The samples were then plasma-nitrided for 5h at 803K and 823K, in a gas mixture of 75%N2+25%H2. The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8mm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layer...

2011-01-01

449

Distribution of 6q-fluctons in nuclei and the quark enhancement of hard processes with the emission of a deuteron

Distribution of 6/ital q/-fluctons in nuclei and the quark enhancement of hard processes with the emission of a deuteron

The energy, angular momentum, and distance (measured from the center of mass of the nucleus) distributions of the effective number of 6q-fluctons are investigated and it is shown that many of the characteristics of these distributions are universal, i.e., independent of the flucton size. ''Saturation'' of the flucton density in nuclei with mass A approx > 80 and certain other features that determine the difference between the behaviors of the effective numbers of fluctons and deuterons are reported. This is used to explain the well known underestimation (by a factor of 1.5--6) of the cross section for the hard inclusive (p, p'd) process on nuclei calculated in the quasielastic formalism. See S. G. Kadmenskii and V. I. Furman, Alpha decay and elated nuclear reactions (in Russian), Energoatomizdat, Moscow, 1985.

450

Damage mechanisms around hardness indentations in Ti{sub 3}SiC{sub 2}

The energy, angular momentum, and distance (measured from the center of mass of the nucleus) distributions of the effective number of 6/ital q/-fluctons are investigated and it is shown that many of the characteristics of these distributions are universal, i.e., independent of the flucton size. ''Saturation'' of the flucton density in nuclei with mass /ital A//approx gt/80 and certain other features that determine the difference between the behaviors of the effective numbers of fluctons and deuterons are reported. This is used to explain the well known underestimation (by a factor of 1.5--6) of the cross section for the hard inclusive (/ital p/, /ital p/'/ital d/) process on nuclei calculated in the quasielastic formalism. See S. G. Kadmenskii and V. I. Furman, /ital Alpha/ /ital decay/ /ital and elated/ /ital nuclear/ /reactions/ (in Russian), Energoatomizdat, Moscow, 1985.

1989-01-01

451

(Ti,Cr,Nb)CN coatings deposited on nitrided high-speed steel by cathodic arc method

Microstructural observations of damage around indentations in Ti{sub 3}SiC{sub 2} are presented. The Vickers hardness decreased with increasing load and asymptotically approached 4 GPa at the highest loads. No indentation cracks were observed even at loads as high as 300 N. Preliminary strength versus indentation plots indicate that, at least for the large-grained material ({approx}100 {micro}m) studied here, Ti{sub 3}SiC{sub 2} is a damage-tolerant material able to contain the extent of microdamage to a small area around the indent. The following multiple energy-absorbing mechanisms have been identified from scanning electron micrographs of areas in the vicinity of the indentation: diffuse microcracking, delamination, crack deflection, grain push-out, grain pull-out, and the buckling of individual grains.

1997-02-01

452

British Library Electronic Table of Contents (United Kingdom)

The combined processes of plasma nitriding and cathodic arc deposition of (Ti,Cr,Nb)CN coatings were applied to HSS substrates. The nitrided layers, obtained in a mixture of H2 (70%) and N2 (30%) at two different temperatures (480^oC and 510^oC), were examined for the microhardness depth profiles. Characterization of the duplex coatings was performed by investigating elemental and phase composition, texture, hardness, friction and wear. XRD and XPS analyses revealed the formation of a mixture of a carbonitride fcc solid solution, in a dominant proportion, and metallic chromium. The film hardness was measured to be ~34GPa. The duplex (Ti,Cr,Nb)CN coatings exhibited superior tribological behavior as compared to both nitrided layers and non-duplex coatings.

2011-01-01

453

Zinc-blende--wurtzite polytypism in semiconductors

Temperature dependence of the performance of ultraviolet detectors

The zinc-blende (ZB) and wurtzite (W) structures are the most common crystal forms of binary octet semiconductors. In this work we have developed a simple scaling that systematizes the {ital T}=0 energy difference {Delta}{ital E}{sub W{minus}ZB} between W and ZB for all simple binary semiconductors. We have first calculated the energy difference {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) for AlN, GaN, InN, AlP, AlAs, GaP, GaAs, ZnS, ZnSe, ZnTe, CdS, C, and Si using a numerically precise implementation of the first-principles local-density formalism (LDF), including structural relaxations. We then find a {ital linear} scaling between {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) and an atomistic orbital-radii coordinate {ital {tilde R}}({ital A},{ital B}) that depends only on the properties of the free atoms {ital A} and {ital B} making up the binary compound {ital AB}. Unlike classical structural coordinates (electronegativity, ...

1992-10-15

454

Temperature dependence of the performance of ultraviolet detectors

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

2003-08-21

455

Materials design for semiconductor spintronics by ab initio electronic-structure calculation

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

2003-08-21

456

Water Concentration Dependent Photochemistry of Ketoprofen in Neutral Aqueous Solutions

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping treatment. However, Mn-, ...

2003-04-01

457

Use of cozilat preparation as enteral nutrition for patients with late radiation injuries of colon

... v. 1267(1) RADIATION CHEMISTRY, RADIOCHEMISTRY AND NUCLEAR

2010-08-06

458

The influence of stray radiation on image quality

Short note.

1988-06-28

459

The Effect of Radiated Electromagnetic Wave by Digital Modulation Signals on the Electronic Devices

The present state of knowledge on the influence of stray radiation on image quality and its physical description and quantification is summarized. Experimental results on the influence of physical parameters on the fraction of scattered radiation and the effect of scatter reduction by air gap technique and secondary radiation grids are committed. Open theoretical and practical problems and the limitations of common methods of scatter reduction are pointed out. (author).

460

Sur face Modification of Ultra High Molecular Weight Polyethylene Films by UV/ozone Ir radiation

Full Text Available

2011-02-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

461

Successful treatment of stereotactic body radiation therapy combined with transarterial chemolipiodolization for hepatocellular carcinoma with biliary obstruction.

Full Text Available

2011-06-01

462

Space Radiation Detector with Spherical Geometry

Full Text Available

2011-03-01

463

Some methodological aspects of investigations into radiation hardening of WWER-type reactor vessels

A particle detector is provided, the particle detector including a spherical Cherenkov detector, and

2011-01-01

464

Solar Radiation Pressure Binning for the Geosynchronous Orbit

Short communication.

1992-10-27

465

Self-filling and self-purging apparatus for detecting spontaneous radiation from substances in fluids

Orbital maintenance parameters for individual satellites or groups of satellites have traditionally

2011-01-01

466

Role of hormone and nutrition in radiation-induced rat mammary carcinogenesis

Disclosed herein is a radiation detector providing for the in situ automatic sampling of fluids containing substances emitting radiation, especially Cerenkov radiation. The detector permits sampling within well casings and is self-purging such that no additional provisions must be established for the storage and disposal of contaminated fluids.

1993-01-01

467

Radiological equipment for emergencies

Published in summary form only.

468

Radiative processes as a condensation phenomenon and the physical meaning of deformed canonical structures

A brief guide to training and equipment needed to effectively manage victims of radiation accidents. (DT)

1985-01-01

469

Radiation-annealing hardening of vanadium

No abstract prepared.

2008-07-01

470

Radiation assessment of contaminated sites of peat mining and peat bricks used as fuel by the population of Zhitomir area of the Ukraine

A study is made of the mechanical properties of vanadium irradiated with fast neutrons up to dose 8.6.10"-"4 dpa, as a function of the temperature of post-radiation annealing. The radiation-annealing hardening (RAH) effect is observed at 300"oC, in agreement with previous studies. It is established for the first time that RAH is accompanied by fall in ductility. A phenomenological model is described which explains the dependence of RAH on radiation dose and temperature, as well as on the content of chemically active alloying impurities. (author).

471

Radiation Protection of the Organism (Selected Chapters)

Short communication.

472

Quantum theory of spontaneous radiation by relativistic channeled particles

... biologically important compounds is sharply lowered with passage of the solutions to the cell an organ, where their sensitivity ...

1970-12-11

473

Quality Assurance of Intensity Modulated Radiation Therapy: Site-Specific Results of Eulji University Hospital

1977. USSR Beloshitsky, VV Kumakhov, MA Wedell, R. Moskovskij

1977-09-23

474

N=2 supersymmetric radiation damping in an external electromagnetic field, noncommutativity and duality

Full Text Available

2011-06-01

475

Multi-spectral schottky barrier infrared radiation detection array

No abstract prepared.

2008-07-01

476

Multi-spectral schottky barrier infrared radiation detection array

A multi-spectral Schottky barrier infrared detector array in which individual pixels of radiation from a remote radiating object are detected by two or more Schottky barrier infrared radiation detectors each having a different spectral response so as to provide a ''color'' discrimination for the array.

1983-12-27

477

Kinetics of low-temperature radiation hardening of metallic materials under irradiation

A multi-spectral Schottky barrier infrared detector array in which individual pixels of radiation from a remote radiating object are detected by two or more Schottky barrier infrared radiation detectors each having a different spectral response so as to provide a ''color'' discrimination for the array.

478

British Library Electronic Table of Contents (United Kingdom)

A formula is obtained which describes the kinetics of low-temperature radiation hardening caused by creation of dislocation loops of interstitial type during irradiation. The radiation hardening of aluminum and vanadium is estimated using this formula and results of experiments on studying processes of nucleation and growth of interstitial dislocation loops in these materials by transparent electron microscopy. It is shown that the proposed formula is valid for description of the kinetics of low-temperature radiation hardening.

2011-01-01

479

Infrared processes in the auroral zone

Influence of production technology and irradiation conditions on radiation hardening of reactor vessel steels

... aurorae carbon dioxide emission spectra infrared radiation nitrogen nitrogen

8432-01-01

480

Induced radiation during scattering of channeled electrons and positrons by point defects

Short communication.

1992-10-27

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

481

Individually adapted examination protocols for reduction of radiation exposure in chest CT

In scattering of channeled particles by point defects and in emission of gamma rays in the spontaneous-radiation spectral region conditions are attained where the momentum transferred to the defect is taken up by the crystal as a whole. This leads to coherent and interference effects in the radiation from the crystal defects. When the longitudinal momentum transferred is zero, an induced radiation effect appears in the transitions between the states of transverse motion.

1984-12-01

482

Improvement of the Radiation Efficiency for a CPW(Co-Planar Waveguide)-Fed ZOR(Zeroth-Order Resonant) Antenna

No abstract prepared.

2002-02-01

483

Free radicals in lysozyme reacted with peroxidizing methyl linoleate

Full Text Available

2011-01-01

484

Four cases of bowel perforation following radiation therapy for cervical cancer

... electron spin resonance gamma radiation lipids lyophilization lysozyme radicals

485

Experts' discussion on the possibility of quantification of the radiation hazard

External radiation dose exceeded 5,000 rad in three cases, and intravaginal radiation dose was 5,000 rad in one case. Radiation damage including perforation was seen in the end of ileus in one case, in the sigmoid and rectum in two cases, and in the end of ileus, sigmoid and rectum in the last case. Satisfactory results were obtained by the removal of the ileocecum in the case of the damage in the end of the ileus. However, only colostomy was performed for the damage in the sigmoid and rectum.

1984-10-01

486

Enteral nutrition with cosilate and full parenteral nutrition in multimodality treatment of late radiation injuries of large intestine

Due to the intensity and vast number of subjects, this Bremen experts' discussion, too, could discuss only part of the problem of the possibilitiy to quantify the radiation hazard. One preliminary result is that there is no scientific proof of the harmlessness of radiation exposure during normal operation of a nuclear power plant, either within the plant or in its vicinity. Other results are that some important questions can not be answered yet, and that there are important hints on the dangers even of low radiation doses. (GL).

1978-01-01

487

Effective dose equivalent in nuclear medicine investigations

Short note.

1989-06-01

488

Differentiation between brain tumor recurrence and radiation injury using perfusion, diffusion-weighted imaging and MR spectroscopy.

... radiation hazards hazards health hazards MEDICINE. SOMATICALLY

1984-05-07

489

Differentiation between brain tumor recurrence and radiation injury using MR spectroscopy.

PMID:20602289

2010-01-01

490

Cooperative spontaneous emission from two different atoms

PMID:16304000

2005-12-01

491

Cluster-loop structure influence on molybdenum radiation hardening

The total radiation rate, angular distribution of the emitted energy and photon correlations of the cooperative spontaneous radiation from two atoms with different resonance frequencies and spontaneous decay rates are calculated. Contrary to the case of two identical atoms oscillations appear in the total radiation rate and the spatial distribution of the total number of emitted photons differs from the single-atom radiation pattern. The effect of the dipole-dipole near-field interaction on the time evolution of the atomic system is discussed. (author).

1986-01-01

492

Bulgarian population exposure resulting from diagnostic nuclear-medicine applications

Results on defect structure study and degree of molybdenum radiation hardening irradiated by fission neutrons and medium energy alpha-particles are presented. It is shown that molybdenum irradiation by alpha-particles and neutrons leads to different degree of material hardening for the same damage level. It is established that molybdenum radiation hardening is mainly defined by radiation defect clusters visible in electron microscope whose coefficient of rigidity depends on their size. 5 refs.; 6 figs.; 2 tabs. (author).

1990-05-22

493

An Analysis of Vibration and Sound Radiation of Sandwich Panels Using the Rayleigh-Ritz Method

... populations radiation doses RADIOACTIVE MATERIALS. SOMATICALLY

1980-10-26

494