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Control of Phosphorus Transient Enhanced Diffusion using Co-implantation

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Diffusion during He/sup +/, Ne/sup +/, and Xe/sup +/ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu/sub 6/Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the ...

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Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the ...

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Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

Norwegian Open Research Archives (NORA)

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The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

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In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

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Wood-polymer composites (WPC) have been prepared of pinewood with different monomers using Gamma radiation: acrylamide, butyl acrylate, butyl methacrylate, styrene, acrylonitrile, and polyester. The polymer loading was determined as a function of monomer concentration and absorbed dose. The data show that polymer loading increases by increasing the monomer concentration. In two cases, BMA and polyester, the polymer loading decreases at high concentrations. This can be explained by the increase of the viscosity. Thus the diffusion of the compound into bulk would be slower. The absorbed dose seems to play a positive role in enhancing the polymer loading by increasing the dose. The mechanical properties, tensile and compression strength, have been improved in the most cases for all monomer concentrations or absorbed doses. Using polyester there was no improvement in the mechanical properties, and using acrylamide the ...

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The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

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The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

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SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of #approx#2E13cm"-"2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.

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Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

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For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

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This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

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The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to ...

International Nuclear Information System (INIS)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

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The aim of this work was to study acute alterations of the enterohepatic recirculation (EHR) of bile acids 3 days after an 8-Gy radiation exposure in vivo in the rat by a washout technique. Using this technique in association with HPLC analysis, the EHR of the major individual bile acids was determined in control and irradiated animals. Ex vivo ileal taurocholate absorption was also studied in Ussing chambers. Major hepatic enzyme activities involved in bile acid synthesis were also measured. Measurements of bile acid intestinal content and intestinal absorption efficiency calculation from washout showed reduced intestinal absorption with significant differences from one bile acid to another: absorption of taurocholate and tauromuricholate was decreased, whereas absorption of the more hydrophobic taurochenodeoxycholate was increased, suggesting that intestinal passive diffusion was enhanced, whereas ileal active transport ...

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Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.

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Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant ...

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

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We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} ...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of As-implanted Si. The relations of the enhanced diffusion to residual defects and lattice restoration have been studied in detail. The As concentration profiles and residual defects are measured. It is found from the data that the lattice has been restored when the implanted sample is annealed at 1150 deg C (or 1050 deg C) for 1s. The defect density decreases rapidly with increase of annealing time (from 1 to 12s). The enhanced diffusion coefficient maximum appears in the annealing time ranging from 1 to 5s. Allmost a 'complete' annealing of displacemet damage is obtained and the diffusion coefficient is less than that in above-mentioned conditions when the implanted samples are annealed at 1150 deg C in the time ranging from 12 to 20s. the ...

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The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

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We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced ...

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We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur ...

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

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During the recrystallization by solid-phase-expitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +/- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, it is proposed that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by ...

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A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; ...

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

International Nuclear Information System (INIS)

Kinetic Monte Carlo simulations are used to analyze the ripening and dissolution of small Si interstitial clusters and #left brace#113#right brace# defects, and its influence on transient enhanced diffusion of dopants in silicon. The evolution of Si interstitial defects is studied in terms of the probabilities of emitted Si interstitials being recaptured by other defects or in turn being annihilated at the surface. These two probabilities are related to the average distance among defects and their distance to the surface, respectively. During the initial stages of the defect ripening, when the defect concentration is high enough and the distance among them is small, Si interstitials are mostly exchanged among defects with a minimal loss of them to the surface. Only when defects grow to large sizes and their concentration decreases, the loss of Si interstitials through diffusion to the surface prevails, causing their ...

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Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

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A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group ...

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The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

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A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due ...

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The ab initio pseudopotential method is used to study transient-enhanced-diffusion (TED) related processes. The electronic degrees of freedom are included explicitly, together with the fully self-consistent treatment of the electron charge density. A large supercell and a fine k-point mesh are used to ensure numerical convergence. Such method has been demonstrated to give quantitative description of defect energetic. We will show that boron diffusion is significantly enhanced in the presence of the Si interstitial due to the substantial lowering of the migrational barrier through a kick-out mechanism. The resulting mobile boron can also be trapped by another substitutional boron, forming an immobile and elect rically inactive two-boron pair. Similarly, carbon diffusion is also enhanced significantly due to the pairing with Si interstitial. However, carbon binds to Si interstitial ...

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(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained ...

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It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

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We demonstrate the rapid optical characterization of large numbers of individual metal nanoparticles freely diffusing in colloidal solution by confocal laser spectroscopy. We find that hollow gold nanospheres and solid silver nanoparticles linked with a bifunctional ligand, both designed nanostructures, exhibit significantly higher monodispersity in their Rayleigh and Raman scattering response than randomly aggregated gold and silver nanoparticles. We show that measurements of rotational diffusion timescales allow sizing of particles significantly more reliably than can be obtained using translational diffusion timescales.

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Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent ...

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A method for recycling laser flashlamp radiation in selected wavelength ranges to decrease thermal loading of the solid state laser matrix while substantially maintaining the pumping efficiency of the flashlamp.

Science.gov (United States)

This study addresses the modeling of transdermal diffusion of drugs, to better understand the permeation of molecules through the skin, and especially the stratum corneum, which forms the main permeation barrier of the skin. In transdermal delivery of systemic drugs, the drugs diffuse from a patch placed on the skin through the epidermis to the underlying blood vessels. The epidermis is the outermost layer of the skin and can be further divided into the stratum corneum (SC) and the viable epidermis layers. The SC consists of keratinous cells (corneocytes) embedded in the lipid multi-bilayers of the intercellular space. It is widely accepted that the barrier properties of the skin mostly arises from the ordered structure of the lipid bilayers. The diffusion path, at least for lipophilic molecules, seems to be mainly through the lipid bilayers. Despite the advantages of transdermal drug delivery compared to other drug ...

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

International Nuclear Information System (INIS)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

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The enhancement of longitudinal heat transfer by means of fluid pulsation in a pipe has been investigated analytically and numerically, including the transient state. The effects of pulsation amplitude, frequency, and pipe length on thermal properties such as effective thermal diffusivity and delay time are clarified. Their effects on numerical calculations are also presented and suggestions for efficient numerical calculations of this problem are made concerning the combination of parameters.

International Nuclear Information System (INIS)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented ...

International Nuclear Information System (INIS)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms ...

International Nuclear Information System (INIS)

High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transient-enhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for long-range self-interstitial migration in Si, and we believe these are the first observations ...

International Nuclear Information System (INIS)

We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO_2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-#mu#m device characteristics, such as V_t_h and I_d_s_a_t, for ...

International Nuclear Information System (INIS)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical ...

International Nuclear Information System (INIS)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron ...

International Nuclear Information System (INIS)

Ultraviolet (UV) upconversion (UC) luminescence in Yb3+/Er3+-codoped yttrium oxide (Y2O3) nanocrystals can be enhanced by orders of magnitude via tridoping further with Li+ ions under diode laser excitation of 970 nm. Sensitized three-photon UC radiations at 390 and 409 nm, corresponding to the 4G11/2?4I15/2 and 4H9/2?4I15/2 of Er3+ ions, respectively, present an enhancement time of about 33 times, which is larger than the 24 times enhancement for the UC green radiation. The UV UC radiation at 320 nm that corresponds to the 2P3/2?4I15/2 of Er3+ ions has also been greatly enhanced. Theoretical calculations interpret that all the observed enhancement times of UV UC radiations arise from the prolonged lifetimes of their intermediate states.

International Nuclear Information System (INIS)

Remote-controlled handling systems are required for work to be done in the decommissioning and dismantling of nuclear facilities. These systems are equipped with electronic devices suitable for use in working environments affected by ionizing radiation. The publication explains the step-wise progress achieved for improving the radiation resistance of electronic devices with the example of a four-quadrant controlling device for the motors of a manipulator. The radiation resistance of the device could be enhanced to radiation energies of 5.500 Gy. This means that a manipulator vehicle equipped with this controlling device can take up to approx. 15 kGy all in all, taking into account its own shielding properties. (DG).

International Nuclear Information System (INIS)

In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative Ostwald ripening ...

International Nuclear Information System (INIS)

Thermal diffusivity was measured with a laser flash method up to 2000 K for UO_2 pellets irradiated in a commercial reactor. Measurements were done on micro samples of disks (2 mm diameter) or regular prisms (1.5 or 2 mm square cross sections). Thermal diffusivity degraded on extending burnup in agreement with reported values for UO_2 irradiated in test reactors, and it showed hysteresis during the laser flash experiments. Thermal diffusivity began to recover above 750 K and almost completely recovered above 1400 K, which corresponded with the reported radiation damage recovery. The obtained data were in agreement with predictions applying the thermal conductivity expression for irradiated UO_2 proposed by Amaya and Hirai. The sample experiencing power ramp showed higher thermal diffusivity than that of the base irradiated sample and had no obvious hysteresis. This suggested that ...

International Nuclear Information System (INIS)

The work scope of 'Biological Research for the Radiation Protection' had contained the research about ornithine decarboxylase and its controlling proteins, thioredoxin, peroxiredoxin, S-adenosymethionine decarboxylase, and glutamate decarboxylase 67KD effect on the cell death triggered ionizing radiation and H_2O_2(toxic agents). In this study, to elucidate the role of these proteins in the ionizing radiation (or H_2O_2)-induced apoptotic cell death, we utilized sensesed (or antisensed) cells, which overexpress (or down-regulate) RNAs associated with these proteins biosynthesis, and investigated the effects of these genes on the cytotoxicity caused by ionizing radiation and H_2O_2(or paraquat). We also investigated whether genisteine(or thiamine) may enhance the cytotoxic efficacy of tumor cells caused by ionizing radiation (may enhance the ...

International Nuclear Information System (INIS)

The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected, data are in good agreement with a recently developed model of oxygen out-diffusion; (ii) the location across the wafer with a radial dependence, results could be related to stress induced by thermal gradient.

International Nuclear Information System (INIS)

New non-collinear schemes are suggested for transverse velocity modulation of electron beams and for the generation of coherent spontaneous radiation by these transversely modulated beams. It is shown that due to the non-collinearity some orders of magnitude enhancement can be achieved for the coherent spontaneous radiation (CSR) power at both the fundamental and harmonic frequencies.

International Nuclear Information System (INIS)

We have calculated the on-axis spectrum of spontaneous radiation emitted by an electron moving along a planar undulator that has a magnetic profile along the axis that approximates a square wave. (This could be obtained in practice by driving a ferromagnetic undulator into saturation by excessivecurrent in the windings.) We find considerable enhancement of the harmonic radiation spectrum. We compare the harmonic power emitted by an electron moving through an undulator having a sine-wave field profile with the radiation emitted from an undulator having a square-wave profile; the latter is approximated by the first three Fourier components of the undulator magnetic field profile along the axial direction. Examples are computed for 40MeV electrons taking K1 is greatly enhanced for the approximate square-wave magnetic profile: the ratio of the power emitted at f=5 by the square-wave ...

International Nuclear Information System (INIS)

Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si_1_-_x_-_yGe_xC_y during 750"oC inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes #left brace#311#right brace# defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C_iC_s) pairing reaction that successfully ...

Energy Technology Data Exchange (ETDEWEB)

Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B{sup +}-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the {open_quotes}excess{close_quotes} interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO{sub 2} interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be ...

International Nuclear Information System (INIS)

Experiments on the depth dependence of transient enhanced diffusion (TED) of boron during rapid thermal annealing of Ge-preamorphized layers reveal a linear decrease in the diffusion enhancement between the end-of-range (EOR) defect band and the surface. This behavior, which indicates a quasi-steady-state distribution of excess interstitials, emitted from the EOR band and absorbed at the surface, is observed for annealing times as short as 1 s at 900 deg. C. Using an etching procedure we vary the distance x_E_O_R from the EOR band to the surface in the range 80-175 nm, and observe how this influences the interstitial supersaturation, s(x). The supersaturations at the EOR band and the surface remain unchanged, while the gradient ds/dx, and thus the flux to the surface, varies inversely with x_E_O_R. This confirms the validity of earlier modelling of EOR defect evolution in terms of Ostwald ripening, and ...

International Nuclear Information System (INIS)

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 deg. C and the time spent within 50 deg. C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 deg. C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles ...

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

Science.gov (United States)

Two patients who developed large intracranial vessel occlusion after standard radiation therapy for brain tumor are described. This form of vascular occlusion is usually seen in patients who have previously been treated by radiotherapy for intracranial tumor who then develop a relatively acute change in neurologic status. Histology of the lesion mimics accelerated focal arteriosclerosis. The clinical and radiographic manifestations of one case were highly atypical. The vasculopathy became evident shortly after termination of radiation therapy for a fourth ventricular ependymoma, and the angiographic picture stimulated a diffuse arteritis. The second patient was more typical, with clinical symptoms developing 12 years after radiation therapy for an oligodendroglioma. Occlusion of a proximal vessel that had been included in the radiation port was demonstrated radiographically and ...

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops ...

International Nuclear Information System (INIS)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.

Energy Technology Data Exchange (ETDEWEB)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

International Nuclear Information System (INIS)

Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).

International Nuclear Information System (INIS)

The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f_A. Accurate knowledge of f_A is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f_A is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f_A without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f_S_b#<=#0.012 and f_B#>=#0.98 at temperatures of #approx#800 degree C, which are the strictest bounds reported to date. Our results are in agreement ...

International Nuclear Information System (INIS)

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si_1_-_yC_y layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array ...

International Nuclear Information System (INIS)

Using a radioactive tracer method the bulk and grain boundary diffusion of "5"9Fe was determined in industrial alloy 800 and melts of alloy 800 with additional P and S in the temperature range 800 to 1000 C. The use of the approximation of Suzuoka was confirmed by autoradiographs. In alloy 800 H the activation energy of grain boundary diffusion of "5"9Fe is (209 #+-# 17)kJ/mol. Dissolved elements especially P increase the activation energy of the grain boundary diffusion of Fe by their segregation to the grain boundaries. In addition the influence of the grain boundary diffusion on the growth of creep cavities was investigated in the same materials, and the chemical composition of the creep cavities and grain boundaries were analysed by Auger electron spectroscopy (AES). For alloy 800 + 0.088 wt-%P an enrichment of about 14 at-%P was observed at the grain boundaries. The addition of P clearly ...

International Nuclear Information System (INIS)

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.

International Nuclear Information System (INIS)

The interaction between a lower hybrid wave and a fusion alpha particle displaces the alpha particle simultaneously in space and energy. This results in coupled diffusion. Diffusion of alphas down the density gradient could lead to their transferring energy to the wave. This could, in turn, put energy into current drive. Here we calculate numerical solutions for the alpha energy transfer and study a range of conditions that are favourable for wave amplification from alpha energy. We find that it is possible for fusion alpha particles to transfer a large fraction of their energy to the lower hybrid wave. The numerical calculation shows that the net energy transfer is not sensitive to the value of the diffusion coefficient over a wide range of practical values. An extension of this idea, the use of a lossy boundary to enhance the energy transfer, is investigated. This technique is shown to offer a large ...

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

Energy Technology Data Exchange (ETDEWEB)

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

International Nuclear Information System (INIS)

Radiation defects produced by helium implantation were used to shape profiles of palladium (Pd) and platinum (Pt) atoms in-diffusing (for 20 min at temperatures 600-800 deg. C) either from surface silicide (Pd_2Si, PtSi) or implanted layers. Results show that this procedure allows a strong localization of substitutional Pd and Pt at the depth where the damage produced by helium peaks. This results in local reduction of carrier lifetime by an almost ideal recombination centers - the acceptor level of substitutional Pd (E _c - 0.22 eV) or Pt (E _c - 0.23 eV). While optimum conditions for Pt in-diffusion are about 700 deg. C, Pd gives the best results already at lower temperatures (600 deg. C) where it also exhibits higher peak solubility. Both methods were used for optimization of turn-off properties of high power PiN diodes. The devices, where the lifetime was killed locally by Pd and Pt, exhibited similar trade-off between ...

Energy Technology Data Exchange (ETDEWEB)

The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 deg. C was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches.

CERN Document Server

The energy fed by active galactic nuclei to the surrounding diffuse baryons changes the latter's amount, temperature, and distribution; so in groups and in member galaxies it affects the X-ray luminosity and also the Sunyaev-Zel'dovich effect. Here we compute how the latter is enhanced by the transient blastwave driven by a shining quasar, and is depressed when the equilibrium is recovered with a depleted density. We constrain such depressions and enhancements with the masses of relic black holes in galaxies and the X-ray luminosities in groups. We discuss how all these linked observables can tell the quasar contribution to the thermal history of the baryons pervading galaxies and groups.

UK PubMed Central (United Kingdom)

SummaryRadiotherapy is used commonly in the treatment of gynecologic malignancies. Many patients experience emotional distress prior to the initiation of radiotherapy, during...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The adverse effect of moisture diffusion on the properties of wood has been one of the main weaknesses of wood. Using a gamma irradiation method, wood-polymer composites have been produced which exhibit significant improvement in mechanical properties like compression, creep deformation and creep rupture particularly at high humidity. It has been thought that the impregnation of polymer into the wood has affected the moisture diffusion in the wood, so that its adverse effects on the mechanical properties has been reduced. In this report the apparent diffusion coefficients of a Ramin wood impregnated with varying amounts of polymethyl methacrylate (PMMA) were determined using a Fick's law approach. An initial linear relationship was found for impregnation of up to 70% PMMA, after which the diffusion coefficient levels off to a maximum value, for the three environmental relative humidity levels ...

Science.gov (United States)

B-cell Chronic Lymphocytic Leukemia; Nodal Marginal Zone B-cell Lymphoma; Recurrent Adult Burkitt Lymphoma; Recurrent Adult Diffuse Large Cell Lymphoma; Recurrent Adult Diffuse Mixed Cell Lymphoma; Recurrent Adult Diffuse Small Cleaved Cell Lymphoma; Recurrent Adult Grade III Lymphomatoid Granulomatosis; Recurrent Adult Immunoblastic Large Cell Lymphoma; Recurrent Adult Lymphoblastic Lymphoma; Recurrent Grade 1 Follicular Lymphoma; Recurrent Grade 2 Follicular Lymphoma; Recurrent Grade 3 Follicular Lymphoma; Recurrent Mantle Cell Lymphoma; Recurrent Marginal Zone Lymphoma; Recurrent Small Lymphocytic Lymphoma; Splenic Marginal Zone Lymphoma; Waldenstrom Macroglobulinemia

Energy Technology Data Exchange (ETDEWEB)

The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution ...

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which also exhibits an ...

Energy Technology Data Exchange (ETDEWEB)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is ...

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; extended defects and ...

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

Energy Technology Data Exchange (ETDEWEB)

Genomic instability can be produced by ionising radiation, so-called radiation-induced genomic instability, and chemical mutagens. Radiation-induced genomic instability occurs in both germinal and somatic cells and also in the offspring of irradiated individuals, and it is characterised by genetic changes including chromosomal rearrangements. The majority of studies of trans-generational, radiation-induced genomic instability have been described in the male germ line, whereas the authors who have chosen the female as a model are scarce. The aim of this work is to find out the radiation-induced effects in the foetal offspring of X-ray-treated female rats and, at the same time, the possible impact of this radiation-induced genomic instability on the action of a chemical mutagen. In order to achieve both goals, the quantity and quality of chromosomal damage were ...

CERN Document Server

We study local radiation magnetohydrodynamic instabilities in static, optically thick, vertically stratified media with constant flux mean opacity. We include the effects of vertical gradients in a horizontal background magnetic field. Assuming rapid radiative diffusion, we use the zero gas pressure limit as an entry point for investigating the coupling between the photon bubble instability and the Parker instability. Apart from factors that depend on wavenumber orientation, the Parker instability exists for wavelengths longer than a characteristic wavelength lambda_{tran}, while photon bubbles exist for wavelengths shorter than lambda_{tran}. The growth rate in the Parker regime is independent of the orientation of the horizontal component of the wavenumber when radiative diffusion is rapid, but the range of Parker-like wavenumbers is extended if there exists strong horizontal ...

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...

Energy Technology Data Exchange (ETDEWEB)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in ...

International Nuclear Information System (INIS)

Since the late '60s and through the early '90s Kenya has always recognized and appreciated the need for support from Technical and Scientific Support Organizations (TSOs) for activities geared towards enhancing nuclear and radiation safety. The TSOs have since then gained increasing importance for provision of technical and scientific basis for policy formulation, implementation and legislation with regard to radiation safety. National and specific operator programmes on safety and security of radiation source and radioactive waste recognize and encourage the active participation of TSOs. Due to the role they play, technical competence, transparency and the observance of ethical practices have become essential both for the regulator and the regulated. In this respect, interaction and cooperation between stake holders (regulatory authorities, users of radiation, generators of ...

Energy Technology Data Exchange (ETDEWEB)

Enhanced superlattice disordering in nonstoichiometric AlAs/GaAs quantum wells exhibits weak temperature dependence because of the decay of the supersaturated concentration of group-III vacancies. We present a formalism for transient enhanced diffusion in nonstoichiometric materials with which we can extract migration enthalpies {ital H}{sub {ital m}} by assuming that the vacancy decay is thermally activated with an enthalpy {ital H}{sub {ital a}}. By analyzing the electroabsorption from the quantum-confined Stark effect for a set of isochronal and isothermal anneals, we extract a migration enthalpy {ital H}{sub {ital m}}=(1.8{plus_minus}0.2) eV for group-III vacancies, as well as an activation enthalpy {ital H}{sub {ital a}}=(0.7{plus_minus}0.2) eV for vacancy annihilation. {copyright} {ital 1996 American Institute of Physics.}

International Nuclear Information System (INIS)

A large amount of energy has been consumed so far in so called matured industries such as iron and steel, oil refinery, petrochemical, ceramic, paper and pulp manufacturing and so forth. A successive stimulation on the preceding industries has to be enhanced from a technological viewpoint in order to maintain a further development based on novel and innovative technologies. In this regard, energy technology has become and will be increasingly important in a high temperature system so that the basic concept for heat transfer augmentation methods by thermal radiation is reviewed briefly in accord with the recent developments together with theoretical background and the prominent features. The heat transfer augmentation related to thermal radiation is summarized.

International Nuclear Information System (INIS)

In this work the diffusion of ion-beam-injected self-interstitials (Is) and their interaction with impurities in crystalline Si are presented. In particular, the I penetration into a molecular beam epitaxy grown Si structure was studied by means of diffusion effects induced on B spikes, analyzed by a developed simulation code. Trapping effects at sample-surface and bulk are evidenced and modeled. The B marker approach was extended to the two-dimensional (2D) I-diffusion occurring as a consequence of ion implantation through a sub-micron dimension patterned oxide mask. I-source size effects on the I penetration have been found and modeled, quantitatively describing the 2D I-diffusion. The I-substitutional carbon interactions have been also studied, showing the C ability to effectively retain Is. The I-trapping mechanism was quantitatively studied by the simulation code, showing that one I is able to ...

International Nuclear Information System (INIS)

Radionuclide (R) sorption from a solution (vapor) by freshly formed crystals with production of substitution solid solutions under different types of self-disordering is studied. Changes of self-defectiveness and macrodefectiveness with time and effect of radiation defects in the presence of P macroquantities are taken into account. An analysis for monodispersed sorbents is performed. It is shown that the achievement of equilibrium within a reasonable time in impurity-solid phase system depends on defectiveness which ensures a required level of the coefficient of impurity diffusion in sorbent crystals.

Energy Technology Data Exchange (ETDEWEB)

Diffuse {gamma}-ray emission produced by the interaction of cosmic-ray particles with matter and radiation in the Galaxy can be used to probe the distribution of cosmic rays and their sources in different regions of the Galaxy. With its large field of view and long observation time, the Milagro Gamma Ray Observatory is an ideal instrument for surveying large regions of the Northern Hemisphere sky and for detecting diffuse {gamma}-ray emission at very high energies. Here, the spatial distribution and the flux of the diffuse {gamma}-ray emission in the TeV energy range with a median energy of 15 TeV for Galactic longitudes between 30{sup o} and 110{sup o} and between 136{sup o} and 216{sup o} and for Galactic latitudes between -10{sup o} and 10{sup o} are determined. The measured fluxes are consistent with predictions of the GALPROP model everywhere except for the Cygnus region (l {element_of} [65{sup o}, ...

Energy Technology Data Exchange (ETDEWEB)

We have developed a kinetic Monte Carlo (kMC) simulator that links atomic migration and binding energies determined primarily from first principles calculations to macroscopic phenomena and laboratory time scales. Input for the kMC simulation is obtained from a combination of ab initio planewave pseudopotential calculations, molecular dynamics simulations, and experimental data. The simulator is validated against an extensive series of experimental studies of the diffusion of B spikes in self-implanted Si. The implant energy, dose, and dose rate, as well as the detailed thermal history of the sample, are included. Good agreement is obtained with the experimental data for temperatures between 750 and 950 C and times from 15 to 255 s. At 1050o C we predict too little diffusion after 105 s compared to experiment: apparently, some mechanism which is not adequately represented by our model becomes important at this temperature. Below 1050o C, the ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.

International Nuclear Information System (INIS)

In radiation processing of food, the product often has to be prepackaged to prevent microbial recontamination during and after irradiation. The packaging material is exposed to radiation during radiation processing and radiation stability is a key consideration in the selection of packaging materials. The effects of ionizing radiation on many food packaging materials at the dose levels recommended for food precessing can be minimized by selecting appropriate radiation resistant materials. It is important to select materials in which chemicals formed as a result of the radiation treatment do not migrate and interact with the food, affecting its organoleptic and toxicological aspects. It is also important to select materials in which the physical properties are not altered to the extent they cannot resist damage during commercial production, ...

International Nuclear Information System (INIS)

Many assays for oncogenic transformation have been developed ranging from those in established rodent cell lines where morphological alteration is scored, to those in human cells growing in nude mice where tumor invasiveness is scored. In general, systems that are most quantitaive are also the least relevant in terms of human carcinogenesis and human risk estimation. The development of cell culture systems has made it possible to assess at the cellular level the oncogenic potential of a variety of chemical, physical and viral agents. Cell culture systems afford the opportunity to identify factors and conditions that may prevent or enhance cellular transformation by radiation and chemicals. Permissive and protective factors in radiation-induced transformation include thyroid hormone and the tumor promoter TPA that increase the transformation incidence for a given dose of radiation, and retinoids, ...

British Library Electronic Table of Contents (United Kingdom)

Plants require solar radiation for photosynthesis and their growth is directly related to the amount received, assuming that other environmental parameters are not limiting. Therefore, precise estimation of photosynthetically active radiation (PAR) is necessary to enhance overall accuracies of plant growth models. This study aimed to explore the PAR radiant flux in the San Francisco Bay Area of northern California. During the growing season (March through August) for 2?years 2007?2008, the on-site magnitudes of photosynthetic photon flux densities (PPFD) were investigated and then processed at both the hourly and daily time scales. Combined with global solar radiation (R S) and simulated extraterrestrial solar radiation, five PAR-related values were developed, i.e., flux density-based PAR ...

Energy Technology Data Exchange (ETDEWEB)

This paper investigated the effect of hydrogen (H{sub 2}) addition on the combustion process of a heavy-duty diesel engine. The addition of a small amount of H{sub 2} was shown to have a mild effect on the cylinder pressure and combustion process. When operated at high load, the addition of a relatively large amount of H{sub 2} substantially increased the peak cylinder pressure and the peak heat release rate. Compared to the two-stage combustion process of diesel engines, a featured three-stage combustion process of the H{sub 2}-diesel dual fuel engine was observed. The extremely high peak heat release rate represented a combination of diesel diffusion combustion and the premixed combustion of H{sub 2} consumed by multiple turbulent flames, which substantially enhanced the combustion process of H{sub 2}-diesel dual fuel engine. However, the addition of a relatively large amount of H{sub 2} at low load did not change the two-stage heat release ...

International Nuclear Information System (INIS)

Secondary ion mass spectrometry (SIMS) has been used to investigate changes that occur in an advanced Ir-0.3W alloy during high temperature aging. This alloy is used to clad "2"3"8PuO_2 heat sources used in thermoelectric generators for deep space reconnaissance satellites. Long-term direct contact with PuO_2 at 1400"0C leads to physical and chemical changes within the cladding alloy that affect its metallurgical properties. SIMS was used to show that Cr, Fe, Ni, and in some cases O, diffuse from the PuO_2 into the alloy. Thorium and aluminum diffuse out of the alloy in these same regions. This SIMS study suggests that inward O diffusion and subsequent formation of ThO_2 on grain boundaries may stabilize the alloy against enhanced grain growth.

Energy Technology Data Exchange (ETDEWEB)

Solid recycling of AZ31 Mg alloy with vapor deposition coating layer of high purity Mg was evaluated. In the open die forging experiments, two AZ31 Mg alloy specimens with the pure Mg layer were sufficiently bonded by forging at 673 K. Furthermore, the Al and Zn of the AZ31 substrate diffused up to the center of the pure Mg layer. By the theoretical analysis, it is suggested that the grain boundary diffusion enhanced by grain refinement due to hot forging contributes to the solid state bonding of the specimens. Also, the solid recycled specimen was fabricated from the AZ31 Mg substrate with pure Mg layer by hot extrusion at 673 K. The solid recycled specimen showed almost the same tensile properties as the virgin extruded specimen. This is probably related not only to the grain boundary diffusion but also severe plastic deformation by hot extrusion. (orig.)

Energy Technology Data Exchange (ETDEWEB)

The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged phosphorus-interstitial pairs agree well with the obtained experimental results. ...

International Nuclear Information System (INIS)

Testing of barrier properties of insulating materials against radon is usually based on the measurement of the radon diffusion coefficient. Presented report summarizes results of radon diffusion coefficients measurements in more than 120 insulating materials obtained throughout Europe. All measurements were performed by the Czech Technical University, Faculty of Civil Engineering in cooperation with the Radiation Protection Institute. We have found out that great differences exist in diffusion properties, because the diffusion coefficients vary within eight orders from 10"-"1"5 m"2/s to 10"-"8 m"2/s. For each material category of different chemical composition statistical evaluation of results is presented. Possibilities of usage of the radon diffusion coefficient for the design of radon resisting membranes are discussed. Based on the experience from the Czech ...

Energy Technology Data Exchange (ETDEWEB)

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

International Nuclear Information System (INIS)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

International Nuclear Information System (INIS)

Purpose. We report a case of Ewing's sarcoma in the right distal femur in a 6-year-old male to demonstrate how dynamic contrast-enhanced magnetic resonance imaging (DEMRI) findings predicted histopathology. Materials and methods. DEMRI was performed at presentation and during and after completion of chemotherapy and radiation therapy. Histopathologic studies were done at presentation, at 77 weeks (20 weeks after a pathological fracture), and from the en bloc resection at 104 weeks. Results. DEMRI predicted the early tumor response, absence of tumor recurrence, presence of necrosis and lack of fracture healing, confirmed by histopathology. Conclusion. DEMRI is a clinically useful tool in managing Ewing's sarcoma. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Solar ultraviolet radiation is damaging for living organisms due to its high energy pro each photon. The UV radiation is often separated into three regions according to the wavelength: UVC (200-280 nm), UVB (280-320 nm) and UVA (320-400 nm). The most hazardous part, UVC is absorbed completely in the upper atmosphere by molecular oxygen. UVB radiation is absorbed by atmospheric ozone partly, and it is reaching Earth`s surface, as UVA radiation. Besides atmospheric ozone, very important factors in determining the intensity of UVB radiation globally are the solar zenith angle and cloudiness. It may be calculated from global ozone changes that the clear-sky UVB doses may have enhanced by 10-15 % during spring and 5-10 % during summer at the latitudes of Finland, following the decrease of total ozone between 1979-90. The Finnish ozone and UV monitoring activities ...

International Nuclear Information System (INIS)

Radiation therapy has had a significant and an expanded role in the management of cancer of the pancreas during the last decade. In particular, for locally advanced disease, radiation therapy has improved the median survival of patients to 1 year. Intraoperative electron beam therapy has been applied to unresectable and resectable pancreatic cancer in an attempt to enhance local control of disease and to improve patient survival. This paper presents a survey of the role of radiation therapy in treatment of cancer of the pancreas, provides information on the radiobiological aspects of this treatment modality and details the physical and dosimetric characteristics of intraoperative radiation therapy with electrons. Presented are the design specifics of an applicator system, central axis beam data, applicator parameters, dose distribution data, shielding, treatment planning and means ...

Energy Technology Data Exchange (ETDEWEB)

Background. In multiple myeloma 5 different infiltration patterns can be differentiated: 1. Normal appearance of bone marrow, 2. focal involvement, 3. homogeneous diffuse infiltration, 4. combined diffuse and focal infiltration, 5. 'salt-and pepper' pattern with inhomogeneous bone marrow with interposition of fat islands. Methods. For the fast and total acquisition of all patterns a combination of a T1-weighted spin echo sequence and a fat suppression technique is superior. The focal involvement is clearly demonstrated as areas of high signal intensity on e.g. STIR images. Diffuse involvement can be quantified objectively by calculation of the percentage of signal intensity increase after contrast material injection. MRI is superior to X-ray in focal and diffuse involvement. With ultrafast sequences a 'screening' of the whole red bone marrow as for myeloma ...

British Library Electronic Table of Contents (United Kingdom)

Spectral and energy luminescence characteristics of R6G dye solutions in ethanol with addition of Ag nanoparticle suspensions in different aggregate states are experimentally investigated. It is demonstrated that incorporation of non-aggregated and aggregated nanoparticles causes the superluminescence thresholds in R6G solutions to decrease. It is established that the optical properties of the laser beam propagation channel are transformed when low-power (20?mW) cw laser radiation passes through the suspension of nanoparticles. This is manifested through the occurrence of a region with enhanced nanoparticle density in the laser beam center, on which diffraction of laser radiation is observed.

CERN Document Server

The near-threshold enhancement in the ppbar invariant mass spectrum from the B^+ -> K^+ ppbar decay reported recently by the BaBar Collaboration is studied within the J\\"ulich NNbar model. We illustrate that the invariant mass dependence of the ppbar spectrum close to the threshold can be reproduced by the final state interactions. This explanation is in line with our previous analysis of the ppbar invariant mass spectrum from the J/Psi -> gamma ppbar decay measured by the BES Collaboration. We also comment on a structure found recently in the pi^+ pi^- eta' mass spectrum of the radiative J/Psi decay by the BES Collaboration. In particular we argue that one should be rather cautions in bringing this structure in connection with the enhancement found in the ppbar invariant mass spectrum or with the existence of NNbar bound states.

Energy Technology Data Exchange (ETDEWEB)

Current bioartificial extra-corporeal systems are bioreactors where cells are separated from the surrounding media by porous polymeric membranes. The present work focuses on the design of membranes that allow the differential diffusion of plasma metabolites and proteins such as immunoglobulin (IgG). This design will improve catabolites removal and reduce possible immune response and virus infection. We demonstrate the feasibility to synthesize the hydrogels confined to the macroporous structure of membranes by radiation-induced in situ polymerization. The hollow-fiber membranes were soaked in aqueous monomeric solution, rinsed and irradiated while submerged in oil. This procedure confined the hydrogel to the void internal volume of the pores of the membrane. Hydrogels of polyacrylamide and polyHEMA were synthesized this way by irradiation at 10 kGy. Hydraulic permeability and diffusion of glucose, albumin and IgG were ...

Energy Technology Data Exchange (ETDEWEB)

The authors investigate the optimisation of solar-heated cavity receivers in which solar energy collected by a paraboloid collector is converted into electrical energy. The focussed solar energy enters the receiver through an aperture to heat the working fluid, which flows inside the receiver tubes and is compressed by the compressor of a gas turbine system, to the highest process temperature. A method of calculating the distribution on the inner receiver surfaces of the solar radiation reflected by the paraboloid collector is presented to begin with. The interchange of radiant energy inside the receiver cavity can be calculated on this basis, including the radiation loads, the temperatures of the inner receiver walls, and the radiative and convective losses. The temperature fields in the tube walls must be known for determining the strength required of receiver tubes; they can be derived from the useful heat which ...

International Nuclear Information System (INIS)

By the department Radio-ecology of the Laboratory for Radiation Research, in the period 1981 up to 1989 inclusive, the transfer has been studied, from soil to plant, of a number of important activation and fission products, originating in the nuclear-power production in nuclear power plants. The purpose of this study was twofold: on the one side the quantification of this transfer for various agrarian systems and on the other side to find out in how far, after an accidental contamination, certain agriculture activities can influence essentially the transfer and subsequently the radiation burden for the population. Emphasis lay, the last years, in particular upon this second aspect. The results of this study form essential basic data for diffusion models for radioactive materials which, in turn, are important in estimating the effects of measures. (author). 6 refs.; 4 figs.

International Nuclear Information System (INIS)

Nickel ion radiation at 500 C was shown to have a strong effect on the surface electrochemistry and intergranular corrosion (IGC) of stainless steel (SS). Measured current densities in a 1 N sulfuric acid solution at room temperature were increased at active-passive, passive, and transpassive potentials. Radiation effects on the current decay behavior and susecptibility to IGC were similar for a fine-grained (FG) S alloy and for a very large-grained (LG) SS. Radiation-induced segregation (RIS) at the surface was believed to promote higher currents at short times, whereas segregation at grain boundaries was responsible for IG attack. Analytical electron microscopy (AEM) measurements revealed chromium and iron depletion plus Ni and silicon enrichment at grain boundaries in irradiated specimens. Si enhanced dissolution at transpassive potentials, whereas Cr depletion did the same at active-passive and ...

International Nuclear Information System (INIS)

Composite materials of synthetics (based on monomers, oligomers and thermoplastics) and of natural polymers (wood and other fibrous cellulosics) prepared by radiation processing, offer valuable structural materials with enhanced coupling forces between the components. The applied polymer chemistry of such composites shows several common features with that of radiation grafting, e.g. the polymerization rate of oligomer-monomer mixtures in wood remains in most cases proportional to the square-root of the initiating dose-rate, just as in the simultaneous grafting, demonstrating that the chain termination kinetics remain regularly bimolecular in the corresponding dose-rate ranges. In the processing experiences of such composites, low dose requirement, easy process-control, and good technical feasibility have been found for composites of wood with oligomer-monomer mixtures, for coconut fibres with unsaturated polyesters and for ...

Energy Technology Data Exchange (ETDEWEB)

This critical review with 28 references examines absorption and emission in the v2 band of the carbon dioxide molecule at around the 15micron wavelength. The argument for additional infrared absorption, the enhanced greenhouse effect due to increased carbon dioxide concentrations, and radiation transport and increased emissions are discussed. Experiments studying the transmission spectra of pure carbon dioxide and carbon dioxide in nitrogen, and comparing them with the results of climate modelling using the HITRAN and GEISA databases, are described.

Energy Technology Data Exchange (ETDEWEB)

Tetracycline is an antibiotic that absorbs ultraviolet light at 355 nm and preferentially binds to atherosclerotic plaque both in vitro and in vivo. Tetracycline-treated human cadaveric aorta was compared with untreated aorta using several techniques: absorptive spectrophotometry; and tissue uptake of radiolabeled tetracycline, which showed 4-fold greater uptake by atheroma than by normal vessel. In addition, intravenous tetracycline administered to patients undergoing vascular surgery demonstrated characteristic fluorescence in surgically excised diseased arteries. Because of tetracycline's unique properties, the authors exposed tetracycline-treated and untreated aorta to ultraviolet laser radiation at a wavelength of 355 nm. They found enhanced ablation of tetracycline-treated atheroma compared with untreated atheroma. The plaque ablation caused by ultraviolet laser radiation was twice as extensive in ...

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below ...

International Nuclear Information System (INIS)

Tarapur Atomic Power Station Unit-4 is first 540 MWe pressurized heavy water reactor in India. It achieved criticality on 06th March 2005 and then operated at full power i.e 500 MWe. Radiation workers during the normal operation and reactor shutdown are exposed to radiation field. The control of dose rates and the collective dose of the radiation workers is most important for the best performance of the reactor. Experience gained during the operation of the 220 MWe reactors has shown that the Moderator system, primary heat transport system, annulus gas system and moderator cover gas system are the main systems contributing to the dose rate and collective dose. In order to identify the radio nuclides contributing to the radiation field, study was undertaken at TAPS Unit-4. Various samples from the Moderator, primary heat transport system, annulus gas system and moderator cover gas system were collected ...

International Nuclear Information System (INIS)

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are ...

International Nuclear Information System (INIS)

Aluminium nitride (AlN) is a very interesting ceramic because of its combination of properties such as high thermal stability, high hardness and an unusual combination of high thermal and low electrical conductivity. But it is very difficulty to obtain an AlN layer on the aluminium substrates by thermochemical nitriding process. Since a thin film of aluminium oxide existing on the surface of every aluminium substrate prevents the nitrogen atoms from diffusing into the aluminium lattice. However, it is possible to sputter the oxide film away from the aluminium surface in a glow discharge with the use of plasma nitriding technique and to allow the formation of AlN layer on the aluminium bulk. In the present work specimen of aluminium Al 99.5 has been plasma nitrided in a modified plasma nitriding unit, in which a diffusion pump was used to obtain an especially low partial pressure of oxygen in the vauum chamber. The sputter-cleaning prior to the ...

Energy Technology Data Exchange (ETDEWEB)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results ...

Energy Technology Data Exchange (ETDEWEB)

The effects of the dopants, Mg{sup 2+}, Sr{sup 2+}, Sc{sup 3+}, Yb{sup 3+}, Gd{sup 3+}, La{sup 3+}, Ti{sup 4+}, Zr{sup 4+}, Ce{sup 4+}, and Nb{sup 5+}, on the grain boundary mobility of dense Y{sub 2}O{sub 3} have been investigated from 1,500 to 1,650 C. Parabolic grain growth has been observed in all cases over a grain size from 0.31 to 12.5 {micro}m. Together with atmospheric effects, the results suggest that interstitial transport is the rate-limiting step for diffusive processes in Y{sub 2}O{sub 3}, which is also the case in CeO{sub 2}. The effect of solute drag cannot be ascertained but the anomalous effect of undersized dopants (Ti and Nb) on diffusion enhancement, previously reported in CeO{sub 2}, is again confirmed. Indications of very large binding energies between aliovalent dopants and oxygen defects are also observed. Overall, the most effective grain growth inhibitor is Zr{sup 4+}, while the most potent grain ...

Science.gov (United States)

The relationship between processing, microstructure, and properties was studied for A-15 compounds in multifilamentary composites produced by solid-state diffusion and in thin-film samples produced by vapor deposition. Grain sizes of A-15 superconducting compounds were measured by transmission electron microscopy of multifilamentary composites reacted at various temperatures. Critical current densities at 4.2 K and fields up to 6 T were found to be similar for niobium-tin, vanadium-gallium, and vanadium-silicon of the same grain size. Study of the Cu-V-Si phase diagram led to the production of improved multifilamentary vanadium-silicon conductors. The effects of various alloying elements on A-15 layers produced by solid-state diffusion were studied. The most promising new observation was that tantalum can be incorporated into niobium-tin reaction layers, leading to an enhancement of critical currents at high fields. The ...

Energy Technology Data Exchange (ETDEWEB)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion ...

CERN Document Server

Recent X-ray and radio observations have identified a transient low-mass X-ray binary (LMXB) located only 0.1 pc in projection from the Galactic center, CXOGC J174540.0-290031. In this paper, we report the detailed analysis of X-ray and infrared observations of the transient and its surroundings. Chandra bservations detect the source at a flux of F_X = 2e-12 erg cm^-2 s^-1 (2-8 keV). After accounting for absorption both in the interstellar medium and in material local to the source, the implied luminosity of the source is only L_X = 4e34 erg/s (2-8 keV; D=8 kpc). However, the diffuse X-ray emission near the source also brightened by a factor of 2. The enhanced diffuse X-ray emission lies on top of a known ridge of dust and ionized gas that is visible infrared images. We interpret the X-ray emission as scattered flux from the outburst, and determine that the peak luminosity of CXOGC J174540.0-290031 was >2e36 erg/s. We ...

CERN Document Server

We present results from an investigation of the dynamical behavior of buoyant magnetic flux rings in the radiative interior of a uniformly rotating early-type star. Our physical model describes a thin, axisymmetric, toroidal flux tube that is released from the outer boundary of the convective core, and is acted upon by buoyant, centrifugal, Coriolis, magnetic tension, and aerodynamic drag forces. We find that rings emitted in the equatorial plane can attain a stationary equilibrium state that is stable with respect to small displacements in radius, but is unstable when perturbed in the meridional direction. Rings emitted at other latitudes travel toward the surface along trajectories that largely parallel the rotation axis of the star. Over much of the ascent, the instantaneous rise speed is determined by the rate of heating by the absorption of radiation that diffuses into the tube from the external medium. Since the time ...

International Nuclear Information System (INIS)

This monograph provides basic notions and principles in dosimetry and radiation protection in compliance with two fundamental works: IAEA Safety Series No.115 - International Basic Safety Standards for Protection against Ionizing Radiation and for the Safety of Radiation Sources - and Publication no. 60 of International Commission on Radiological Protection. After the review of quantities and units necessary in radiation protection, the book presents the new values of dose limits as well as the values of 'radiation weighting factor', 'tissue weighting factor' and 'conversion factor intake-dose' (committed effective dose per unit intake) by ingestion and inhalation for 30 most important radionuclides. The new values of dose limits, lower than the old values, are a challenge for the radiation protection, especially of the 'public' where the dose limit diminished ...

Science.gov (United States)

The system of the early forecast of radiation hazardous fluxes of solar cosmic rays in space on the basis of the real time neutron monitors data obtained by the NMDB (Neutron Monitor Data Base) network is created. The forecast system is based on a short cut technique of definition of a spectrum of solar protons from the data of the limited number of neutron monitor stations and with a simplified procedure of accounts. It is shown that the results of computations of solar proton spectra with the short-cut technique little differ from spectra obtained with a complete technique at energies less than 5 GeV. Thus the good agreement between derived from the neutron monitor data intensities of solar protons in an energy range of hundreds MeV with the data of direct measurements of solar protons at GOES-11 spacecraft is observed. The maximum of increase on neutron monitors outstrips on several hours (2-10) an appropriate maximum of radiation-dangerous ...

British Library Electronic Table of Contents (United Kingdom)

Nanoparticle metal oxides offer a wide variety of potential applications in medicine due to the unprecedented advances in nanobiotechnology research. In this work, the effect of zinc oxide (ZnO) nanoparticles prepared by mechano-chemical method on the antibacterial activity of different antibiotics was evaluated using disk diffusion method against Staphylococcus aureus and Escherichia coli. The average size of ZnO nanoparticles was between 20 nm and 45 nm. Although ZnO nanoparticles (500 mg/disk) decreased the antibacterial activity of amoxicillin, penicillin G, and nitrofurantoin in S. aureus, the antibacterial activity of ciprofloxacin increased in the presence of ZnO nanoparticles in both test strains. A total of 27% and 22% increase in inhibition zone areas was observed for ciprofloxac...

British Library Electronic Table of Contents (United Kingdom)

This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...

Energy Technology Data Exchange (ETDEWEB)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

British Library Electronic Table of Contents (United Kingdom)

The present study was carried out to exploit the feasibility of using polymeric nanosponges as an alternative carrier for targeting econazole nitrate (EN) to the skin through topical hydrogel formulation. Nanosponges prepared by emulsion solvent diffusion method were evaluated for various physicochemical parameters and in vitro drug release. The nanosponges of EN were discrete free flowing nanosized particles with perforated orange peel like morphology as visualized by SEM. The nanosponge formulated using PVA:EC (3:2) displayed highest in vitro release after 12 ?h in phosphate buffer (pH 6.8) that fitted matrix model. Selected nanosponge was formulated as Carbopol 934 NF hydrogel using varying concentrations of permeation enhancers propylene glycol and N-methyl-2-pyrrolidone. The EN nanosp...

British Library Electronic Table of Contents (United Kingdom)

Summary Status epilepticus or other brain-damaging insults launch a cascade of events that may lead to the development of epilepsy. MRI techniques available today, including T2- and T1-weighted imaging, functional MRI, manganese enhanced MRI (MEMRI), arterial spin labeling (ASL), diffusion tensor imaging (DTI), and phase imaging, can detect not only damage caused by status epilepticus but also plastic changes in the brain that occur in response to damage. Optimal balance between damage and recovery processes is a key for planning possible treatments, and noninvasive imaging has the potential to greatly facilitate this process and to make personalized treatment plans possible.

International Nuclear Information System (INIS)

A poly(ether urethane) (PEUR)/poly(ethylene oxide) (PEO)/SiO2 based nanocomposite polymer is prepared and employed in the construction of high efficiency all-solid-state dye-sensitized nanocrystalline solar cells. The introduction of low-molecular weight PEUR prepolymer into PEO electrolyte has greatly enhance the electrolyte performance by both improving the interfacial contact properties of electrode/electrolyte and decreasing the PEO crystallization, which were confirmed by XRD and SEM characteristics. The effects of polymer composition, nano SiO2 content on the ionic conductivity and I3- ions diffusion of polymer-blend electrolyte are investigated. The optimized composition yields an energy conversion efficiency of 3.71% under irradiation by white light (100 mW cm-2).

British Library Electronic Table of Contents (United Kingdom)

The concept of antimicrobial packaging has received great attention because of its potential to enhance food safety. Several studies have explored its applications and effectiveness to suppress pathogenic microorganisms. However, few studies have analyzed the alterations caused in the engineering properties of food-packaging polymers after the incorporation of antimicrobials. Such information is very important to understand the feasibility of producing antimicrobial packaging films on the industrial scale. This review explores the work done so far to evaluate how the incorporation of antimicrobial substances affects the properties of food-packaging systems. This article also emphasizes diffusion studies on antimicrobial substances through packaging films and the analytical solutions used t...

CERN Document Server

The Hamiltonian Mean Field model describes a system of N fully-coupled particles showing a second-order phase transition as a function of the energy. The dynamics of the model presents interesting features in a small energy region below the critical point. In particular, when the particles are prepared in a ``water bag'' initial state, the relaxation to equilibrium is very slow. In the transient time the system lives in a dynamical quasi-stationary state and exhibits anomalous (enhanced) diffusion and L\\'evy walks. In this paper we study temperature and velocity distribution of the quasi-stationary state and we show that the lifetime of such a state increases with N. In particular when the $N\\to \\infty$ limit is taken before the $t \\to \\infty$ limit, the results obtained are different from the expected canonical predictions. This scenario seems to confirm a recent conjecture proposed by C.Tsallis.

International Nuclear Information System (INIS)

A deep band of #left brace#311#right brace# defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the #left brace#311#right brace#-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The #left brace#311#right brace# defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the #left brace#311#right brace#-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.

Energy Technology Data Exchange (ETDEWEB)

As a series of experimental determinations of the thermal diffusivity of molten alkali halides, this paper describes measurements on five molten alkali metal chlorides (LiCl, NaCl, KCl, RbCl, and CsCl) in the temperature range up to 1440 K by the forced Rayleigh scattering method. K[sub 2]Cr[sub 2]O[sub 7] is employed as a dye substance to color the transparent molten salts. In comparison with the present results converted into thermal conductivity, most of the previous experimental data obtained by steady-state methods show larger values, up to about five times, which may be due to the systematic error caused by the presence of convection and radiation. It is found that the thermal conductivity of these series of molten alkali metal chlorides decreases with increasing molecular weight, and their temperature coefficients are weakly negative. 24 refs., 9 figs., 6 tabs.

DEFF Research Database (Denmark)

The objectives of this study were to characterize the changes of VOC material emission profiles over time and develop a method to account for such changes in order to enhance a source identification technique that is based on the measurements of mixed air samples and the emission signatures of individual building materials determined by PTRMS. Source models, including powerlaw model, doubleexponential decay model and mechanistic diffusion model, were employed to track the change of individual material emission signatures by PTRMS over a ninemonth period. Samples of nine typical building materials were tested individually for nine months and later in combination to obtain actual mixture emissions. VOC emissions from each material were measured in a 50liter smallscale chamber. Chamber air was sampled by PTRMS over a 28day period to determine their emission rate decay characteristics as well as to establish the initial profile of emission ...

British Library Electronic Table of Contents (United Kingdom)

In order to promote uniformity between jurisdictions, the Australian Radiation Protection and Nuclear Safety Agency (ARPANSA) has developed the National Directory for Radiation Protection, which is a regulatory framework that all Australian governments have agreed to adopt. There is a large and diverse range of industries involved in mining or mineral processing, and the production of fossil fuels in Australia. Enhanced levels of naturally occurring radionuclides can be associated with mineral extraction and processing, other industries (e.g. metal recycling) and some products (e.g. plasterboard). ARPANSA, in conjunction with industry and State regulators, has undertaken a review and assessment of naturally occurring radioactive material (NORM) management in Australian industries. This rev...

British Library Electronic Table of Contents (United Kingdom)

Zooplankton tolerant to ultraviolet radiation (UVR) could be indirectly affected by UVR through interactions with UV-sensitive species in the same ecosystem. In Lake Giles, Pennsylvania, USA, the calanoid copepod Leptodiaptomus minutus is more UVR tolerant than the cohabiting species Daphnia catawba and Cyclops scutifer. We asked whether L. minutus is affected by UV-induced mortality of a food competitor (D. catawba) or a predator of its nauplii (C. scutifer). We conducted two in situ enclosure experiments with six treatments: L. minutus alone, L . minutus + Daphnia and L. minutus + Cyclops in the presence and absence of UVR. There were few differences in survival among treatments in Experiment 1, which had enhanced food and a cumulative UVR (320 nm) dose of 9.3 kJ m-2. In Experiment 2, wh...

Energy Technology Data Exchange (ETDEWEB)

Correlation between mechanical stress and hydrogen effects on radiation damage in polycide-gate MOS capacitors was investigated as a function of gate-oxide thickness. The compressive stress magnitude was altered by varying the silicide (TiSi/sub 2/ or WSi/sub 2/) thickness in the polycide-gate electrode, and hydrogen introduction into gate-SiO/sub 2/ film was carried out by diffusion from plasma-deposited silicon-nitride passivation film (SiN-Cap). In a MOS capacitor without passivation film (No-Cap sample), it was found that compressive stress on gate-SiO/sub 2/ reduces both positive charge build-up (..delta..Qot) and interface-trap generation (..delta..Dit). Radiation induced shift, ..delta..Qot exhibits a smaller stress effect as compared with ..delta..Dit. As gate-SiO/sub 2/ thickness decreases, the stress effect on ..delta..Qot increases, while this effect on ..delta..Dit remains nearly constant. This compressive ...

UK PubMed Central (United Kingdom)

Diffusion in the extracellular space (ECS) of the brain is constrained by the volume fraction and the tortuosity and a modified diffusion equation represents the transport behavior of many molecules...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

This research focuses on the development and application of high order statistical analyses applied to measurements performed with subcritical fissile systems driven by an introduced neutron source. The signatures presented are derived from counting statistics of the introduced source and radiation detectors that observe the response of the fissile system. It is demonstrated that successively higher order counting statistics possess progressively higher sensitivity to reactivity. Consequently, these signatures are more sensitive to changes in the composition, fissile mass, and configuration of the fissile assembly. Furthermore, it is shown that these techniques are capable of distinguishing the response of the fissile system to the introduced source from its response to any internal or inherent sources. This ability combined with the enhanced sensitivity of higher order signatures indicates that these techniques will be of significant utility ...

Energy Technology Data Exchange (ETDEWEB)

A method for conditioning electron beams is proposed, making use of the TM{sub 210} mode of microwave cavities, to reduce the axial velocity spread within the beam, in order to enhance gain in resonant electron beam devices, such as the free-electron laser (FEL). Effectively, a conditioner removes the restriction on beam emittance. The conditioner is analyzed using a simple model for beam transport and ideal RF cavities. Analysis of an FEL is employed to evaluate performance with reduced axial velocity spread. Examples of FELs are presented showing the distinct advantage of conditioning.

Energy Technology Data Exchange (ETDEWEB)

An embodiment of a mercury-free fluorescent lamp combines a low pressure rare gas discharges with a phosphor having a quantum efficiency grater than one. The choice of the rare gas depends on a number of factors, one of which is the resonance transition energy. Less demand is placed the quantum efficiency of the phosphor for a lower energy resonance photon. Xenon has the lowest energy resonance transition of the stable rare gases at 8.5 eV (147 nm) and thus is a good candidate to study. The usefulness of a xenon-based discharge depends on the radiant emittance of the discharge at the resonance wavelength of 147 nm. The radiant emittance from a low pressure xenon positive column discharge is measured using two independent techniques. The first relies on the measurement of the resonance level density using absorption techniques. The effective decay rate of the resonance level is calculated using radiation trapping theory. The product of this density and trapped decay ...

International Nuclear Information System (INIS)

A passive dosemeter, based on a Makrofol ED track detector covered with aluminized Mylar, enclosed in diffusion chamber, has been used for radon concentration studies. Detectors have been irradiated, using a "2"4"1Am source, at different energies and fluences in order to obtain the electrochemical etching conditions that allow the optimum registration of alpha particles having energies over 3 MeV. Thirty dosemeters have been sent to the UK National Radiation Protection Board (NRPB) Radon Environmental Chamber for calibration. The sensitivity of the dosemeter has been calculated. Several dosemeters have also been exposed in houses and dwellings in the Barcelona and Madrid areas for monitoring. Values for radon concentration in the areas under study are presented. (author).

Energy Technology Data Exchange (ETDEWEB)

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...

Energy Technology Data Exchange (ETDEWEB)

We studied whether plasma-etching techniques can use standard screen-printed gridlines as etch masks to form self-aligned, patterned-emitter profiles on multicrystalline-silicon (mc-Si) cells from Solarex. We conducted an investigation of plasma deposition and etching processes on full-size mc-Si cells processed in commercial production lines, so that any improvements obtained would be immediately relevant to the PV industry. This investigation determined that reactive ion etching (RIE) is compatible with using standard, commercial, screen-printed gridlines as etch masks to form self-aligned, selectively doped emitter profiles. This process results in reduced gridline contact resistance when followed by plasma-enhanced chemical vapor deposition (PECVD) treatments, an undamaged emitter surface easily passivated by plasma-nitride, and a less heavily doped emitter between gridlines for reduced emitter recombination. This allows for heavier doping beneath the gridlines ...

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case ...

KoreaScience (Korea)

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International Nuclear Information System (INIS)

The aim of the work in this thesis is to investigate the convective and diffusive transport in the TM chemistry transport model, and to investigate some aspects of the consequences for NOx. The large inaccuracy and uncertainty in the description of processes like convection and turbulent diffusion, the strong dependence of the radiative forcing of ozone on its vertical distribution, and the strong dependence of the ozone production on the distribution of NOx, are the main motivation. The availability of the ERA-40 data, where convective data and vertical diffusion coefficients are archived, allows a study of the effect of different convective mass flux sets, and different vertical diffusion coefficients on the model-simulated distribution of tracers. In this thesis the following questions are addressed : (1) How large is the sensitivity of the (model simulated) distribution of ozone ...

International Science & Technology Center (ISTC)

Research on Diffusion Zinc Cladding of Structural Steels, as Well as Their Mechanical and Corrosion Properties to Replace Their Cyanic Cadmium Plating

Energy Technology Data Exchange (ETDEWEB)

The environmental data for the NSDN are presented in the form of tables for each solar site. The solar sites are grouped into 12 zones, each of which consists of several adjacent states. The solar energy sites are in alphabetical sequence within each zone. The tables provide available meteorological data for reporting sites in the NSDN as follows: Insolation - the insolation table presents the total, diffuse, direct, maximum, and extra-terrestrial radiation for the solar site. It also shows the ratio of total extra-terrestrial radiation, as a percent. Temperature - the temperature table gives the average, daytime, nightime, maximum, minimum and inlet-water temperatures for the solar site. Additional tables are presented for some of these NSDN sites, supplying either wind or relative humidity data, or both. Wind - all of the passive and some of the active solar sites are equipped with wind sensors. These provide information ...

Science.gov (United States)

The effect of aerosol on clouds poses one of the largest uncertainties in estimating the anthropogenic contribution to climate change. Small human-induced perturbations to cloud characteristics via aerosol pathways can create a change in the top-of-atmosphere radiative forcing of hundreds of Wm-2. Here we focus on links between aerosol and deep convective clouds of the Atlantic and Pacific Intertropical Convergence Zones, noting that the aerosol environment in each region is entirely different. The tops of these vertically developed clouds consisting of mostly ice can reach high levels of the atmosphere, overshooting the lower stratosphere and reaching altitudes greater than 16 km. We show a link between aerosol, clouds and the free atmosphere wind profile that can change the magnitude and sign of the overall climate radiative forcing. We find that increased aerosol loading is associated with taller cloud towers and anvils. The taller clouds ...

Energy Technology Data Exchange (ETDEWEB)

The Atmospheric Radiation Monitor (ARM) uninhabited aerospace vehicle (UAV) program aims to develop measurement techniques and instruments suitable for a new class of high altitude, long endurance UAVs while supporting the climate community with valuable data sets. Using the Scaled Composites Proteus aircraft, ARM UAV participated in Mixed-Phase Arctic Cloud Experiment (M-PACE), obtaining unique data to help understand the interaction of clouds with solar and infrared radiation. Many measurements obtained using the Proteus were coincident with in-situ observations made by the UND Citation. Data from M-PACE are needed to understand interactions between clouds, the atmosphere and ocean in the Arctic, critical interactions given large-scale models suggest enhanced warming compared to lower latitudes is occurring.

Energy Technology Data Exchange (ETDEWEB)

A fully quantized many-particle theory of the standard free-electron laser in the small-signal, cold-beam regime is presented. The approach is based on an evaluation of the time-evolution operator in the interaction picture to first order in the quantum-mechanical recoil. For algebraic convenience we use the moving (Bambini-Renieri) frame, in which resonance occurs for zero electron momentum. Though we neglect space-charge effects, genuine many-particle contributions still show up, because the radiation emitted by one electron can be amplified by another electron. Our main results are gross features of the amplification, such as gain and spread, are virtually without many-particle effects. These effects are mainly important in the case of spontaneous emission. For a sufficiently high current, the buildup of the laser field from vacuum is enhanced by amplified spontaneous emission. Incoherence of the spontaneous radiation ...

Energy Technology Data Exchange (ETDEWEB)

A range of additives has been developed for enhancing grafting yields in a variety of systems initiated by ionizing radiation. Cellulose has been adopted as the predominant naturally occurring model backbone polymer in these studies because of its structural relationship to wood which is the reference substrate for the work reported in the related second part of this paper concerning composites. Some experiments have been performed with the other major naturally occurring polymer, wool. For comparison purposes with synthetic materials, some studies have also been performed with polypropylene as trunk polymer. Styrene has been used as a predominant monomer in grafting with some experiments utilizing the acrulates like methyl methacrylate. The role of solvent in grafting has been evaluated. UV has been used as initiator to replace ionizing radiation for certain experiments. The additives used were mineral acids, lithium ...

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; ...

International Nuclear Information System (INIS)

... radiation effects RADIATIONS. WOOD-PLASTIC COMPOSITES.

Energy Technology Data Exchange (ETDEWEB)

Radon migration in porous, earthen materials is characterized by diffusion in both the air and water components of the system as well as by the interaction of the radon between the air and water. The size distribution and configuration of the pore spaces and their moisture distributions are key parameters in determining the radon diffusion coefficient for the bulk material. A mathematical model is developed and presented for calculating radon diffusion coefficients solely from the moisture content and pore size distribution of a soil, reducing the need for resorting to radon diffusion measurements. The resulting diffusion coefficients increase with the median pore diameter of the soil and decrease with increasing widths of the pore size distribution. The calculated diffusion coefficients are suitable for use in simple homogeneous-medium ...