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AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor layers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterization was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements. (author)

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Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops ...

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The electrical conductivity of Vitox-alumina (99.2%), Wesgo-alumina (99.9%) and AlN (99.6%) has been measured during and after irradiation with an experimental set-up which allows fusion relevant loading conditions. All irradiations were performed in high vacuum at 450 C using a 104 MeV {alpha}-particle beam with an applied DC electric field of 100 kV/m. In the high purity Vitox-alumina the in-situ and postirradiation bulk conductivities {sigma} and {sigma}{sub 0} show the highest irradiation induced electrical breakdown ever observed. The saturation level near 4 x 10{sup -2} ({Omega}m){sup -1}, reached already after 0.015 dpa (O-sublattice), is already above the critical value necessary to avoid MHD pressure drop with 10 {mu}m coatings in flowing liquid metal coolants. Under the same conditions no radiation induced electrical degradation at all has been found in Wesgo-alumina and AlN. (orig.).

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In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is associated with the ...

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A theoretical study of electron and positron band structures of zinc-blende AlN and InN and their alloy Al_0_._5In_0_._5N is presented using the first-principles full-potential linearized augmented plane-wave method. Equilibrium lattices constants are determined from the total-energy minimization method. The results are compared with previous calculations and with experimental measurement. Electron and positron charge densities are computed as function of position in the unit cell. Detailed plots of distributions are along the direction. The ionicity factors are calculated by means of three different approaches. The calculated results of the positron charge density reflect the high insight for the annihilation effect.

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In this paper, aluminium nitride synthesis is carried out by direct laser irradiation onto an aluminium target surface in a nitrogen containing atmosphere. The influence of various processing parameters on the microstructure of AlN thin films is investigated in order to improve their tribological properties. The main microstructural characteristics: nature, concentration, in depth distribution and morphology of various phases are studied versus processing parameters by TEM and GIXD. (author). 2 refs., 1 fig., 2 photos.

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The Si_3N_4-rich corner of the phase diagrams for neodymia and ytterbia containing sialons has been investigated by a systematic variation of the m and n values for compositions between 0.5 and 2.0 with a step size of 0.5. Samples requiring nitrides of the rare earth elements have not been prepared. Sintering has been performed at 1800 C for one hour in a nitrogen atmosphere of 1 MPa. The sintered samples were characterized by X-ray diffraction analysis to identify the crystalline phases in equilibrium with sialon. #alpha#- and #beta#-sialon, the 21R AlN polytypoid, and N-melilite M' were found in the Nd containing system. Materials with Yb showed the formation of #alpha#- and #beta#-sialon, and the AlN polytypoids 12H and 21R. The m and n values of the #alpha#-sialon phase have been calculated via their lattice parameters that were refined by a least squares routine. The occurrence and composition of the phases were used to outline their ...

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A mixture of powders of silica and aluminum nitride is subjected to high-energy ball milling for different milling times. This material is subsequently compacted by uniaxial pressing and sintered at 1450 deg. C. The resulting pellets are crushed and analysed by X-ray diffraction. For short milling times, the amount of phase transformation is minimal and the resulting material mostly consists of cristobalite and aluminum nitride. For long milling times, nanocrystalline #beta#-SiAl_2O_2N_2 is mainly produced.

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Accelerator mass spectrometry (AMS) represents a powerful technique for the detection of long-lived radionuclides through ultra-low isotope ratio measurements. In many cases, counting atoms rather than decays yields much higher sensitivities. The potential of AMS will be demonstrated on typical radionuclides of interest with half-lives between some tens of years up to a hundred million years. The precise measurement of the 27Al(n,2n)26Al excitation function will be exemplified. Lack of information exists for a list of nuclides as pointed out by nuclear data requests. A brief overview on detection limits and some applications for selected long-lived radionuclides is given.

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Luminescence properties of SiAlON phosphors codoped with Ca and Yb were investigated by changing the host lattice composition. These modifications of the host lattice were obtained by replacing Si-N bonds by Al-N and Al-O bonds. Their photoluminescence (PL) and cathodoluminescence (CL) properties were measured and compared with each other. PL allows observing the influence of the host lattice modifications by measuring wider areas. CL can excite all luminescent centers, in particular the UV luminescence centers, even if their amount is small. Thus, two additional peaks in the ultraviolet and infrared regions were observed in CL, which is not observed by PL. This work suggests that the combination of PL and CL gives more understanding about the luminescence of SiAlON phosphors, in particular the role of the secondary phases on their properties.

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Phase transformations from #alpha#- to #beta#-SiAlONs (i.e., from #alpha#' to #beta#') have been recently reported in a number of rare-earth SiAlON systems during postsintering heat treatment. In the present work, this transformation process in a Sm (#alpha# + #beta#)-SiAlON material is studied by using XRD, TEM, and EDS X-ray mapping techniques. It is observed that in addition to the formation of #beta#' and M' phases, the #alpha#'-to-#beta#' transformation is accompanied by a significant increase in the amount of an AlN-polytypoid phase. The results suggest that some #alpha#' phases are thermodynamically unstable at temperatures lower than the material sintering temperature and will decompose when conditions allow. For the composition studied in this work, the #alpha#-SiAlON decomposition can be described in general as #alpha#' #-># #beta#' + M' + AlN polytypoid.

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The structural parameters of various Haegg phases (H or M_n_+_1AX_n phases) are studied experimentally by x-ray and electron spectroscopies, x-ray diffraction, and ab initio full potential as well as full mutiple scattering theoretical calculations. Experimentally it was found that the structure of all ternary compounds analyzed herein are relaxed. The values of the lattice parameters and relaxations obtained from ab initio calculations are in excellent agreement with those deduced from the analysis of the experimental data. The bonding scheme has been analyzed and the charge transfer between constituting atoms determined. It is demonstrated that the strength and electrical transport properties in these materials are principally governed by the metallic planes. For the solid solution (Ti_0_._5Nb_0_._5)_2AlC, the most salient result is that the basal planes are corrugated, which could explain the solid solution scattering observed in this H phase.

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Dysprosium #alpha#-sialon ceramic has been fabricated from #alpha#-Si_3N_4, AlN, Al_2O_3 and Dy_2O_3 starting powders, using gas pressure sintering at 1800 deg C or higher temperatures under a relatively low gas pressure of 0.9MPa N_2. The resultant #alpha#-sialon grains showed significantly different features, such as equiaxed, elongated, and even a few extraordinarily large with high aspect ratio grains in the fine matrix, which has rarely been observed in #alpha#' ceramics. It is suggested that the temperature strongly influences the grain morphologies of #alpha#-sialon, playing an important role particularly in the latter stage of the 'nucleation-growth' process. Such a microstructural morphology of mixed with equiaxed and elongated grains toughens the #alpha#-sialon ceramics and leaves them still hard. Overly high temperature treatment leads to the preferential growth of a few #alpha#' grains which become excessively large and long, but does not significantly ...

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The atomic structures of calcium sialons Ca_xSi_1_2_-_mAl_mN_1_6 (m = 0.5, 1, 2, 4) with the #alpha#- or #beta#-Si_3N_4-type structure were calculated, using the ab initio DFT approach, including relaxations of both lattice parameters and positions of the atoms. For all m values the #alpha#-Si_3N_4-type structure has a lower energy than the #beta#-type. For m = 1, 2 and 4 the #alpha#-type structure is also stable against decomposition into the metal nitrides, in agreement with experimental data. For m = 0.5 stability becomes uncertain. Al ions prefer positions close to Ca. Rather strong structural relaxations occur around the Ca ion.

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We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American Institute of ...

Energy Technology Data Exchange (ETDEWEB)

For a wider application of GaAs single crystals for semiconductor devices a cheaper process to grow crystals with high purity and low dislocation density is required. According to todays knowledge the Czochralski method with a hot wall vessel should be the choice. The temperature of the vessel has to be 700deg C to avoid condensation of arsenic which vapourizes from the 1240deg C hot melt. Arsenic vapour is very agressive against all metals. Therefore the corrosion resistance of metals and alloys with a high melting point and also ceramics has been tested. All the alloys under investigation are corroded severely so that they have to be excluded as a material for the vessel. The metals tantalum, molybdenum and tungsten are more resistent, titanium forms initially a thick protection layer and further corrosion is greatly reduced. The ceramics investigated (TiB{sub 2}; ALN; Makor; BN) are not attacked by arsenic though they may store some arsenic. (orig./MM). ...

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Eu-#alpha#-SiAlON (Eu_m_/_2Si_1_2_-_m_-_nAl_m_+_nO_nN_1_6_-_n) was synthesized with nominal compositions having small m and n values, by firing the powder mixture of Eu_2Si_5N_8, #alpha#-Si_3N_4, AlN, and Al_2O_3 at 1900 "oC for 6 h under 1 MPa nitrogen atmosphere. The ratio of the oxidation state of Eu"2"+/Eu"3"+ was estimated from the X-ray absorption fine structure (XAFS) measurement. The observed X-ray absorption near edge spectrum (XANES) showed that the Eu ion in Eu-#alpha#-SiAlON was mainly in divalent state but also coexisted with a small amount of Eu in the trivalent state. The crystal structure of Eu-#alpha#-SiAlON was refined by the Rietveld analysis of the X-ray powder diffraction patterns. The lattice constants of the samples increased with increasing m and n values. The excitation band of Eu-#alpha#-SiAlON ranged from the ultraviolet to the visible light region and a broad emission band centered at about 590 nm were observed. The emission intensity ...

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"2"7Al and "2"9Si solid-state NMR spectra and X-ray diffraction (XRD) patterns were obtained for #alpha#-SiAlON powders prepared by combustion synthesis, according to which the phase transformation and structure evolution of #alpha#-SiAlON were studied. It was found that in #alpha#-SiAlON "2"9Si chemical shift values (-48 < #delta# _S_i < -47) were close to those in #beta#-Si_3N_4 and #alpha#-Si_3N_4, indicating that Si atoms kept SiN_4 coordination to a large extent in #alpha#-SiAlON despite the presence of O atoms. Dissimilarly, "2"7Al chemical shift values in #alpha#-SiAlON deviated clearly from that corresponding to AlN_4 coordination (#delta# _A_l #approx# 112) and occurred in a range from #delta# _A_l 95.5 to 99.9, which should be assigned to tetrahedral AlO _xN_4_-_x (0 #<=# x #<=# 4) coordination. The broadening effect of AlO _xN_4_-_x peaks was noticed, which was suggested to induced by slight dispersion of #alpha#-SiAlON compositions. "2"7Al ...

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Carbothermal reduction-nitridation (CRN) of talc (Mg_3(Si_2O_5)_2(OH)_2) and halloysite (Al_2Si_2O_5(OH)_4) clay provides a useful route for preparing low-cost Mg-#alpha# sialon powder. In this study, the chosen molecular ratios of talc to halloysite were 0.1:1, 0.2:1, 1.5:1.0 and 2.0:1. The CRN reaction was conducted at 1450 to 1520 deg C and 2 to 6h holding time using carbon black as a reducing agent in flowing N_2 (gas). The results showed the synthesized powder was composed of #alpha#-sialon, #beta#-sialon and small amounts of SiC, 15R and AlN phases that greatly depended on the ratio of talc to halloysite, the reaction temperature and holding time. The highest content of Mg-#alpha# sialon, as much as 90wt%, was achieved at 1480 deg C for a holding time of 4h at a talc to halloysite ratio of 1.5:1.0. SiC was considered as an intermediate compound. We also discuss the evaporation loss of Mg caused by talc decomposing into MgSiN_2 intermediate phase in the CRN ...

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A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping treatment. However, Mn-, Fe-, Co- or Ni-doped ...

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Dense sialon ceramics along the tie line between Si_3N_4 and Nd_2O_3#centre dot#9AlN were prepared by hot-pressing at 1,800 C. The materials were subsequently heat-treated in the temperature range 1,300--1,750 C and cooled either by turning off the furnace (yielding a cooling rate (T_c_o_o_l) of #approx# 50 C/min) or quenching (T_c_o_o_l #>=# 400 C/min). It was found necessary to use the quenching technique to reveal the true phase relationships at high temperature, and it was established that single-phase #alpha#-sialon forms for 0.30 #<=# x #<=# 0.51 in the formula Nd_xSi_1_2_-_4_._5_xAl_4_._5_xO_1_._5_xN_1_6_-_1_._5_x. The #alpha#-sialon is stable only at temperatures above 1,650 C, and it transforms at lower temperatures by two slightly different diffusion-controlled processes. Firstly, an #alpha#-sialon phase with lower Nd content is formed together with an Al-containing Nd-melilite phase, and upon prolonged heat treatment thus-formed #alpha#-Sialon ...