... A technique of the prior art uses an acousto-optic Q-switch which can ... Another approach uses electro-optic Q-switches in a pseudo cavity dumping ...
Repetitively Q-switched operation of an end-pumped Nd:YAG laser over the range of 200 Hz to 3 kHz using an intracavity chopper is demonstrated. Performance is shown to be comparable to that achieved with an acousto-optic Qswitch under similar conditions. The advantages and limitations of the mechanical Qswitch are described. Parametric variations of output coupling and pump power lead to an extended empirical description of repetitively Q-switched laser operation. The insertion loss as a function of aperture-edge penetration into the resonator is reported, and a definition of the mechanical Q-switch opening time is provided. Q-switched pulsewidths as short as 35 ns were obtained for the Nd:YAG laser, with a peak power-enhancement factor in excess of 300. PMID:20862099
We have generated approximately 100 watts of frequency doubled light from the output of an electro-optically Q-switched, diode-pumped Nd:YAG slab laser oscillator operating at an average power of 200 watts (2.5 kHz repetition rate, 80 mJ/pulse, 25 ns pulsewidth). The Q-switch was a compensated z-axis propagation LiNbO{sub 3} electro-optic modulator, and the frequency conversion crystal was a thin slab of KTP. In addition, Q-switched operation at an average power of approximately 250 watts with 26 ns pulsewidths has been demonstrated.
The traveling-wave mode in ring lasers is achieved by two methods: by a reversing mirror, and by using an intracavity nonreciprocal device. This paper is devoted to realization of the traveling-wave mode in a mode-locked YAG-Nd ring laser by a method proposed by Tomov et al. This method uses two intracavity Q-switches. In mode-locked operation, pulses are generated that can be considered short compared with the period of modulation T = L/C (where L is the length of the perimeter of the cavity). Analysis shows that if the shift of the switching signals corresponds to the time of travel of a light pulse between Q-switches, the pulse in one direction will pass the Q-switches at instants of zero losses, while losses in the other direction will be maximized for a distance between Q-switches of L/4, and will be zero for a distance L/2. Experimental verification of the proposed method gave unidirectional ...
Upon illumination of an optically driven Q-switch 35 over conventional electro- optic, acousto-optic and medium located inside the laser cavity with an ...
An improved acousto-optic laser Q-switch uses a chirped fm pulse in the acousto-optic cell to diffract and focus the input beam into a resonating high-Q mode. When the rf acoustic pulse is not wholly within the cell, the beam is diverted to the output. A reflective surface is placed on the cell to yield only one output beam and to yield a retroflective beam back into the cavity for a high Q condition whenever a correctly generated chirp acoustic wave is in the proper postion within the cell.
A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize ...
Detecting a camouflaged target in a visually noisy background depends on the ability of the observer to discriminate the target from the surrounding terrain. Visible laser irradiation at less than damage levels can act as a masking source by compromising or reducing the observer's ability to resolve differences in the visual scene. Previous research has examined this concept by investigating laser flash effects on: acuity (size discrimination); tracking (motion discrimination); visual sensitivity (color); and contrast sensitivity functions (luminance contrast). In all cases, flashes from continuous-wave (CW) sources have proven more effective visually than pulsed (Q-switched) sources, when compared on peak-energy criteria (i.e., MPE), even though Q-switched lasers induce damage at lower energy doses. Additionally, the inherent safety of ultra-short laser pulses has been questioned. Past animal research has shown that, on the measures ...
This article describes the laser Thomson scattering principle and the developed system on HL-2A device. The high power Q-switch Nd:YAG laser, with a wavelength of 1064 nm, can sufficiently satisfy the measurement requirement. The polycromator consisting of avalanche photo-diodes(APD) and narrow band interference filters, can effectively improve the measurement of scattering light. The electron temperature is deduced by error-weighted lookup table method, which improves the data- processing speed or efficiency. Finally, the experiment results of the one-point electron temperature during different discharges of plasma are presented. (authors)
Nanocrystalline ZnO films were fabricated via a simple method involving the oxidation of Zn films at a remarkably low temperature of 380 C. X-ray diffraction study confirmed that the Zn films were completely oxidized even at the low temperature of 380 C and the ZnO films fabricated were of polycrystalline wurtzite structure. Room temperature optical pumping using a frequency-quintupled Q-switched Nd:YAG laser ({lambda}=213 nm) exhibited that sharp peaks at around 3.12 eV emerged above excitation powers of {proportional_to}7 MW/cm{sup 2}, demonstrating lasing in the ZnO films. These results represent that the process is a simple, promising approach for fabricating ZnO of sufficient optical performance for use as ultraviolet (UV) light emitters and an alternative UV laser source; both are key components in short-wavelength photonic devices. (orig.)
Single crystals of semi-organic L-histidine hydrobromide have been grown by slow evaporation technique from a mixture of L-histidine and hydrobromic acid in aqueous solution at ambient temperature. From high-resolution X-ray diffraction analysis, the crystalline perfection of the grown crystal has been studied. Single crystal X-ray diffraction analyses, Nuclear Magnetic Resonance spectral analysis, Thermo-Gravimetry (TG), Differential Thermal Analysis (DTA) and hardness test have been employed to characterize the as-grown crystals. The UV cutoff wavelength of the grown crystal is below 300 nm and has a wide transparency window, which is suitable for second harmonic generation of laser in the blue region. Nonlinear optical characteristics have been studied using Qswitched Nd:YAG laser (#lambda#=1064 nm). The second harmonic generation conversion efficiency of the grown crystals confirms their suitability for frequency conversion applications.
The macrotemporal structure of the Super-ACO Storage ring free-electron laser (FEL) can be either continuous, pulsed, or chaotic, and can present some rapid fluctuations. The temporal evolution of a storage ring FEL involves both the longitudinal motion of the positron beam (especially the synchrotron oscillations) and the FEL dynamics, as in a coupled system. Studies on the dynamics of the positron beam are performed here, in the goal to have a stable source for FEL applications, and to determine the conditions for a stable Q-switching experiment. The employed method is to study the influence of a controlled change of the radio frequency (RF) (modulation or frequency jump) on the beam. A simple theoretical model taking into account the perturbed RF system is presented to help the understanding of the experimental data. The different methods of measurement are described. Then, the results are given for several experimental conditions and the influence of different ...
New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. Homojunction GaAs solar cells were fabricated using several techniques. One involved ...