p-type silicon detectors: Topics by WorldWideScience.org

Application of neutron transmutation doping method to initially p-type silicon material

Not Available

1979-01-01

2

Application of neutron transmutation doping method to initially p-type silicon material

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron ...

2009-07-15

3

Untitled - NASA Technical Report Server (NTRS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of ...

2008-05-12

4

Silicon electrochemistry related to the formation of porous silicon

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

5

Application of neutron transmutation doping method to initially p-type silicon material

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

1988-01-01

6

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

2009-01-01

7

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of ...

2007-10-15

8

Application of high sensitive thermoluminescent LiF:Mg, Cu, P-type detectors for radon concentration measurements

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of ...

2007-10-01

9

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

Polish 2001 p. 105 Poland Bogacz, J. Budzanowski, M. Mazur, J. Swakon,

2001-09-10

10

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

1993-01-01

11

Method of mitigating titanium impurities effects in p-type silicon material for solar cells

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

1991-01-01

12

.N& 21762 - NASA Technical Report Server (NTRS)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

1980-05-01

13

CMS Silicon Strip Tracker Performance

of the supplier of pulled p-type silicon material. of G-6 and E 8 centers irradiated in the 1 t o 3 MeV range. tions w i l l be performed using the General ...

14

Developments and tests of double-sided silicon strip detectors and read-out electronics for the Internal Tracking System of ALICE at LHC

In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

2011-01-01

15

Application of Pd silicide in the process of silicon detectors

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

1999-01-01

16

Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

1990-04-01

17

Hall mobility minimum of temperature dependence in polycrystalline silicon

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

1997-09-01

18

Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

1998-01-01

19

Study of porous silicon morphologies for electron transport

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO_x) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO_x shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO_x nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO_x shell acts as an effective insulating layer. The ZnTe-SiO_x nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

2009-11-11

20

The CDF intermediate silicon layers detector

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra ...

1993-05-17

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21

Studies of relativistic heavy ion collisions at the AGS (Experiment 814)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

1999-11-01

22

Thin-film UV detectors based on hydrogenated amorphous silicon and its alloys

This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)

1990-01-01

23

A Versatile Evaporative Cooling System Designed for Use in an Elementary Particle Detector

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

2001-05-16

24

British Library Electronic Table of Contents (United Kingdom)

An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...

2007-01-01

25

First results from the Lund NMP particle detector system

First results from the Lund NMP particle detector system

The design and first results from a Double Sided Silicon Strip Detector (DSSSD) recently installed at the Lund Nuclear Microprobe facility (NMP) are presented. The detector has 64 sector strips and 32 ring strips, which in combination give more than 2000 detector cells, each with characteristics comparable with a standard surface barrier detector (SBD). The detector has been tested both with radioactive sources and with different ion beams and energies. The most striking features are the high rate virtually pile-up free operation and also the possibility of detailed measurement of angular distributions.

2009-06-15

26

British Library Electronic Table of Contents (United Kingdom)

The design and first results from a Double Sided Silicon Strip Detector (DSSSD) recently installed at the Lund Nuclear Microprobe facility (NMP) are presented. The detector has 64 sector strips and 32 ring strips, which in combination give more than 2000 detector cells, each with characteristics comparable with a standard surface barrier detector (SBD). The detector has been tested both with radioactive sources and with different ion beams and energies. The most striking features are the high rate virtually pile-up free operation and also the possibility of detailed measurement of angular distributions.

2009-01-01

27

Material-induced shunts in multicrystalline silicon solar cells

Material-induced shunts in multicrystalline silicon solar cells

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-15

28

Material-induced shunts in multicrystalline silicon solar cells

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-01

29

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-01-01

30

Electrochemical characterisation of patterned carbon nanotube electrodes on silane modified silicon

Design and fabrication of large ultra-thin PIN detector with membrane stress deviation

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing ...

2008-07-20

31

Characterization of 3D thermal neutron semiconductor detectors

In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.

2010-09-15

32

Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were ...

2007-06-11

33

Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

34

British Library Electronic Table of Contents (United Kingdom)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

35

Construction and Calibration of the Laser Alignment System for the CMS Tracker

Portable real time neutron spectrometry II

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. ...

2006-01-01

36

Portable real time neutron spectrometry

We describe the continued development of a portable, real-time neutron spectrometer. The spectrometer is composed of two distinct detector systems: a Helium 3 gas filled proportional counter for the lower neutron energy interval between 20 KeV and 2 MeV and a bulk silicon solid state detector for the higher energy interval between 2 MeV and 500 MeV. Modeling and experimental results with mono-energetic neutron beams are reported.

2000-01-19

37

Silicon Detector Letter of Intent

We describe the early stage of development of an engineering model portable, real-time neutron spectrometer. Several systems of two distinct detector types, a helium 3 gas filled proportional counter and a bulk silicon solid state detector, will be necessary to cover the energy range from thermal to 500 MeV. The advantages and disadvantages of using a moderator were investigated experimentally.

1999-01-22

38

Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

This document presents the current status of SiD's effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R&D needed to provide the technical basis for an optimised SiD.

2010-05-26

39

Developement of the method for realization of spectral irradiance scale featuring system of spectral comparisons

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an ...

2001-01-01

40

Developement of the method for realization of spectral irradiance scale featuring system of spectral comparisons

Realization of the scale of spectral responsivity of the detectors in the Directorate of Measures and Precious Metals (DMDM) is based on silicon detectors traceable to LNE-INM. In order to realize the unit of spectral irradiance in the laboratory for photometry and radiometry of the Bureau of Measures and Precious Metals, the new method based on the calibration of the spectroradiometer by comparison with standard detector has been established. The development of the method included realization of the System of Spectral Comparisons (SSC), together with the detector spectral responsivity calibrations by means of a primary spectrophotometric system. The linearity testing and stray light analysis were preformed to characterize the spectroradiometer. Measurement of aperture diameter and calibration of transimpedance amplifier were part of the overall experiment. In this paper, the ...

2010-10-15

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41

Comparison of effectiveness of three radon detectors (LR115, CR39 and silicon diode pin) placed in a cylindrical device -theory and experimental techniques

Realization of the scale of spectral responsivity of the detectors in the Directorate of Measures and Precious Metals (DMDM) is based on silicon detectors traceable to LNE-INM. In order to realize the unit of spectral irradiance in the laboratory for photometry and radiometry of the Bureau of Measures and Precious Metals, the new method based on the calibration of the spectroradiometer by comparison with standard detector has been established. The development of the method included realization of the System of Spectral Comparisons (SSC), together with the detector spectral responsivity calibrations by means of a primary spectrophotometric system. The linearity testing and stray light analysis were preformed to characterize the spectroradiometer. Measurement of aperture diameter and calibration of transimpedance amplifier were part of the overall experiment. In this paper, the ...

2010-10-01

42

Comparison of effectiveness of three radon detectors (LR115, CR39 and silicon diode pin) placed in a cylindrical device -theory and experimental techniques

Researchers at the Laboratory of Nuclear Microanalysis in Besancon (France) are developing and improving radon measurements in order to detect and analyse, more precisely radon emanation anomalies in both fields of Earth Sciences and Radioprotection. In order to characterize radon emanation, two complementary techniques are developed; continuous measurement through a portable proportional counter and passive measurements by nuclear track detectors for both fieldwork and laboratory analysis. A mathematical model is being devised to interpret the nuclear track detector response. This model is performed according to the device characteristics: type of detectors, shape and size of cells and whether a membrane is used or not. In addition to the theoritical study, experimental radon concentration measurements will be reported. (author).

1993-12-31

43

TIARA: A large solid angle silicon array for direct reaction studies with radioactive beams

Researchers at the Laboratory of Nuclear Microanalysis in Besancon (France) are developing and improving radon measurements in order to detect and analyse, more precisely radon emanation anomalies in both fields of Earth Sciences and Radioprotection. In order to characterize radon emanation, two complementary techniques are developed; continuous measurement through a portable proportional counter and passive measurements by nuclear track detectors for both fieldwork and laboratory analysis. A mathematical model is being devised to interpret the nuclear track detector response. This model is performed according to the device characteristics: type of detectors, shape and size of cells and whether a membrane is used or not. In addition to the theoritical study, experimental radon concentration measurements will be reported. (author).

44

A comparison of x-ray detectors for mouse CT imaging

A compact, quasi-4? position sensitive silicon array, TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the ?-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The 14N(d,p)15N reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the 15N ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA ...

2010-03-11

45

Observed energy dependence of Fano factor in silicon at hard X-ray energies

There is significant interest in using computed tomography (CT) for in vivo imaging applications in mouse models of disease. Most commercially available mouse x-ray CT scanners utilize a charge-coupled device (CCD) detector coupled via fibre optic taper to a phosphor screen. However, there has been little research to determine if this is the optimum detector for the specific task of in vivo mouse imaging. To investigate this issue, we have evaluated four detectors, including an amorphous selenium (a-Se) detector, an amorphous silicon (a-Si) detector with a gadolinium oxysulphide (GOS) screen, a CCD with a 3:1 fibre taper and a GOS screen, and a CCD with a 2:1 fibre taper and both GOS and thallium-doped caesium iodide (CsI:Tl) screens. The detectors were evaluated by measuring the modulation transfer function (MTF), noise power spectrum ...

2004-12-07

46

Performance of the transition radiation detector flown on the NMSU/WIZARD TS93 balloon-borne instrument

An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.

1999-03-01

47

A new type active personal dosemeter with a solid state detector

It is built and tested a transition radiation detector (TRD) to discriminate positrons from protons in the balloon flight TS 93 experiment. It is presented the TRD performance using flight data obtaining a proton-positron rejection factor of the order of 10{sup -3}. During the 24 hour flight, the data in the momentum range 4-50 GeV/c are collected. Using the TRD together with the Silicon calorimeter, it is achieved an overall rejection factor of about 10{sup -5} of positron against the proton background over the entire momentum range.

1995-09-01

48

Neutron scattering studies in the actinide region. Progress report, August 1, 1992--July 31, 1993

We have developed a new type personal dosemeter by using a B-10 doped silicon p-n junction detector with a polyethylene radiator and a polyethylene moderator. The purpose of this study was to develop a real time neutron dosemeter with a nearly flat response in the energy range from thermal to 15 MeV and low angular dependence to the incident neutron direction. The neutron response of the dosemeter was obtained with the Monte Carlo calculation and the monoenergetic neutron experiment in a free air field and also under a condition attached on a phantom.

1988-04-01

49

In-beam conversion electron spectroscopy using the SACRED array

This report discusses the following topics: Prompt fission neutron energy spectra for {sup 235}U and {sup 239}Pu; Two-parameter measurement of nuclear lifetimes; ``Black`` neutron detector; Data reduction techniques for neutron scattering experiments; Inelastic neutron scattering studies in {sup 197}Au; Elastic and inelastic scattering studies in {sup 239}Pu; and neutron induced defects in silicon dioxide MOS structures.

1993-09-01

50

Halflives of rp-Process Waiting Point Nuclei

Conversion electron studies of medium-heavy to heavy nuclear mass systems are important where the internal conversion process begins to dominate over gamma-ray emission. The use of a segmented detector array sensitive to conversion electrons has been used to study multiple conversion electron cascades from nuclear transitions. The application of the silicon array for conversion electron detection (SACRED) for in-beam measurements has successfully been implemented. (orig.). With 2 figs.

51

Quality Management for Neutron Transmutation Doping of Silicon Ingot in HANARO

The fragment separator at GSI, Darmstadt, has been used to produce and separate very proton rich nuclei in the {sup 100}Sn region. By fragmentation of a {sup 112}Sn beam at 1 A{center_dot}GeV we produced nuclei along the rp-process path between {sup 77}Y and {sup 98}In. By implanting these ions into a silicon detector stack we were able to determine their halflives. Preliminary data are presented.

1999-12-31

52

Growth and electronic properties of two-dimensional systems on (110) oriented GaAs

By using this doping method, silicon semiconductors with extremely uniform dopant distributions can be produced, and this is the dominant advantage of NTD compared with a conventional chemical doping. Good uniformity of a dopant concentration is usually required for high power applications such as thyristor (SCR), IGBT, IGCT and GTO and for special sensors. Achieving an accurate neutron fluence corresponding to a target resistivity as well as a uniform irradiation is the prime target of a neutron irradiation for NTD. Generally, in order to reach an accurate neutron fluence, a real time neutron flux is monitored by a neutron detector such as a Self-powered Neutron Detector(SPND). And, after an irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of a neutron activation sample that has been irradiated with a silicon ingot, and thus the SPND can be properly calibrated. ...

2007-10-15

53

The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk ...

2005-07-01

54

Doping of silicon carbide by ion implantation

High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is to show that the UHT annealing technique is ...

2005-02-15

55

Space Radiation Detector with Spherical Geometry

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is ...

2001-07-01

56

The Pamela Cosmic Ray Space Observatory: Detector, Objectives and First Results

A particle detector is provided, the particle detector including a spherical Cherenkov detector, and

2011-01-01

57

Direct digital radiography versus storage phosphor radiography in the detection of wrist fractures

PAMELA is a satellite borne experiment designed to study with great accuracy cosmic rays of galactic, solar, and trapped nature in a wide energy range (protons: 80 MeV-700 GeV, electrons 50 MeV-400 GeV). Main objective is the study of the antimatter component: antiprotons (80 MeV-190 GeV), positrons (50 MeV-270 GeV) and search for antimatter with a precision of the order of $10^{-8}$). The experiment, housed on board the Russian Resurs-DK1 satellite, was launched on June, 15 2006 in a $350\\times 600 km$ orbit with an inclination of 70 degrees. The detector is composed of a series of scintillator counters arranged at the extremities of a permanent magnet spectrometer to provide charge, Time-of-Flight and rigidity information. Lepton/hadron identification is performed by a Silicon-Tungsten calorimeter and a Neutron detector placed at the bottom of the device. An Anticounter system is used offline to reject false triggers ...

2009-01-01

58

Direct digital radiography versus storage phosphor radiography in the detection of wrist fractures

AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the ...

2002-04-01

59

The PAMELA space experiment: first year of operation

AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the ...

2002-04-01

60

Conceptual design of a low-temperature radiation-hard tracker detector

On the 15th of June 2006 the PAMELA experiment, mounted on the Resurs DK1 satellite, was launched from the Baikonur cosmodrome and it has been collecting data since July 2006. PAMELA is a satellite-borne apparatus designed to study charged particles in the cosmic radiation, to investigate the nature of dark matter, measuring the cosmic-ray antiproton and positron spectra over the largest energy range ever achieved, and to search for antinuclei with unprecedented sensitivity. The apparatus comprises a time-of-flight system, a silicon-microstrip magnetic spectrometer, a silicon-tungsten electromagnetic calorimeter, an anticoincidence system, a shower tail catcher scintillator and a neutron detector. The combination of these devices allows charged particle identification over a wide energy range.

2008-05-15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

61

Limitations of silicon devices for quantum computing

Silicon sensors have about ten times improved radiation hardness around 130 K temperature, compared with the state-of-art sensors close to room temperature. This is based on the Lazarus effect studied by the RD39 Collaboration of CERN. Other benefits of low temperatures will also be discussed. We shall describe the conceptual design of low-mass detector modules cooled using two-phase flow of argon in miniature cooling pipes integrated in the module structure between the sensors and the readout hybrid circuit. The main engineering features of the cooling system and mechanical support structures are discussed, as well as the benefits arising from the operation of the tracker under cryogenic vacuum. 4 Refs.

2003-01-01

62

The 8{pi}LP Project: A 4{pi} light charged particle detection array at LNL

There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

2004-04-28

63

Neutron cross section measurements using the Oak Ridge Electron Linear Accelerator

A 4{pi} detection system sensitive to light charged particles is being developed at the Laboratori Nazionali di Legnaro (LNL) for the study of reaction mechanisms at energies up to 20 AMeV. The array consists of 262 {Delta}E-E telescopes covering 90% of 4{pi}. Each telescope is made of a 300 {mu}m passivated silicon detector and a 15 mm (or 5 mm) CsI(Tl) crystal read by a photodiode. The system will be operational in the Spring of 1997 and the first experiments will run in the second half of 1997.

1996-12-31

64

Angular distributions of light charged particles from /sup 252/Cf fission in the ranges 0-46/sup 0/ and 134-180/sup 0/

During this reporting period the work supported by the US Department of Energy Grant No. DE-FG02-87ER40326.A005 has resulted in two publications and two papers presented at professional meetings. The neutron scattering measurement for this budget period has been completed along with scattering measurements for carbon {sup 88}Sr, {sup 40}Ar, {sup 90}Zr, {sup 208}Pb, {sup 40}Ca and {sup 28}Si. The carbon scattering yield serves to define the detector efficiencies. The silicon sample was available and is of importance in both nuclear physics and reactor physics.

1992-06-01

65

The pisa experiment: spallation products identified by bragg curve spectroscopy

Alpha particles, tritons, deuterons and protons accompanying /sup 252/Cf fission were registered in coincidence with both fission fragments by means of a system containing two-dimensional position-sensitive silicon detectors. Angular distributions, kinetic energy spectra of light charged particles as well as mass distributions of fission fragments in coincidence with light charged particles were measured. The experimental results are compared with some theoretical models.

1985-06-03

66

Launch of the Space experiment PAMELA

In the framework of spallation neutron sources and accelerator-driven systems, the international PISA (Proton-induced Spallation) collaboration has initiated measurements of total- and double-differential cross-sections for products of spallation reactions in a wide range of target nuclei (GU) at the COSY proton accelerator in Julich (Germany). The purpose is to study secondary particle production created in structural, window and target materials via proton beams up to 2.5 GeV of incident kinetic energy. Residual nuclei [H, He up to intermediate mass fragment (IMF)] production cross-sections are of great importance for estimating the damage to target and structure materials involving the planned spallation neutron sources, given that the lifetime of window and target materials is directly associated to those cross-sections. The demand for reliable theoretical predictions on production cross-sections is by no means satisfied by the models and codes that are available today. In this ...

2004-05-17

67

Considerations for the next Compton telescope mission

PAMELA is a satellite borne experiment designed to study with great accuracy cosmic rays of galactic, solar, and trapped nature in a wide energy range protons: 80 MeV-700 GeV, electrons 50 MeV-400 GeV). Main objective is the study of the antimatter component: antiprotons (80 MeV-190 GeV), positrons (50 MeV-270 GeV) and search for antimatter with a precision of the order of 10^-8). The experiment, housed on board the Russian Resurs-DK1 satellite, was launched on June, 15, 2006 in a 350*600 km orbit with an inclination of 70 degrees. The detector is composed of a series of scintillator counters arranged at the extremities of a permanent magnet spectrometer to provide charge, Time-of-Flight and rigidity information. Lepton/hadron identification is performed by a Silicon-Tungsten calorimeter and a Neutron detector placed at the bottom of the device. An Anticounter system is used offline to reject false triggers coming from the ...

2007-01-01

68

Reactive magnetron sputtering of hard Si-B-C-N films with a high-temperature oxidation resistance

A high resolution Compton telescope has been identified by the Gamma Ray Astronomy Program Working Group (GRAPWG) as the highest priority major mission in gamma ray astrophysics following GLAST. This mission should provide 25-100 times improved sensitivity, relative to CGRO and INTEGRAL, for MeV gamma ray lines. It must have good performance for narrow and broad lines and for discrete and diffuse emissions. Several instrumental approaches are being pursued to achieve these goals. We discuss issues relating to this mission including alternative detector concepts, instrumental configurations, and background reduction techniques. We have pursued the development of position-sensitive solid-state detectors (Ge, Si) for a high spectral resolution Compton telescope mission. A #approx#1 m2 germanium Compton telescope of position-sensitive germanium detectors was the basis for one of the GRAPWG concepts. Preliminary Monte Carlo ...

2000-04-12

69

Diffusion in silicon isotope heterostructures

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. The energy and flux of ions bombarding the growing films were ...

2005-11-01

70

Useful vacancies: Positron beam interrogation of fluorine-vacancy complexes in semiconductor device structures

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion ...

2004-05-14

71

Optical investigations of the mode spectra of InP-quantum dots embedded in (Al_xGa_1_-_x)InP micro pillars

The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.

2008-10-31

72

Neutron cross section measurements using the Oak Ridge Electron Linear Accelerator. Performance report, August 1991--June 1992

InP-quantum dots (QDs) are promising sources of single-photons and as active laser medium, emitting in the red part of the visible spectrum and thus in the range of the highest sensitivity of current silicon detectors. The self assembled QDs were grown by metal organic vapor phase epitaxy and are embedded in between distributed Bragg reflectors (DBRs), afterwards the sample was processed by a Focused Ion Beam to fabricate micro-pillars. The DBRs and the high refractive index step between pillar and air results in a three dimensional mode confinement and highly directed emission and thus higher intensity. We have investigated the mode spectra by micro-photoluminescence measurements for different pillar diameters and compared the spectra with a theoretical model showing up good consistency. Q-factors up to 3600 were achieved.

2009-03-22

73

First observation of excited states in the T_z=1/2 nucleus "8"5Mo

During this reporting period the work supported by the US Department of Energy Grant No. DE-FG02-87ER40326.A005 has resulted in two publications and two papers presented at professional meetings. The neutron scattering measurement for this budget period has been completed along with scattering measurements for carbon {sup 88}Sr, {sup 40}Ar, {sup 90}Zr, {sup 208}Pb, {sup 40}Ca and {sup 28}Si. The carbon scattering yield serves to define the detector efficiencies. The silicon sample was available and is of importance in both nuclear physics and reactor physics.

1992-06-01

74

Diffusion examined by diffraction

Excited states in the T_z=(1/2) nucleus "8"5Mo have been observed for the first time with the reaction "5"8Ni("3"2S,#alpha#n#gamma#) at 105 MeV. #gamma#-ray transitions in this nucleus have been assigned unambiguously by combining the information from the GASP #gamma#-ray array, the ISIS silicon ball, and the n-Ring neutron detector. Two band structures have been observed in this nucleus; they continue the smooth evolution of the known bands from the lighter N=43 isotones and have been tentatively assigned spins and parity on this basis. After reaching a maximum of collectivity at "8"3Zr, the trend with increasing mass is reversed, showing a smaller collectivity at "8"5Mo. The rotational behavior of the observed bands is discussed on the basis of the projected shell model calculations.

2002-03-01

75

A satellite born charged particles telescope for the study of cosmic ray nuclei

X-ray diffraction offers a unique combination of advantages for kinetic study which include the non-destructive nature of the measurement, the use of bulk crystals, and the convenience of the experimental arrangements. These attributes and the availability of position-sensitive detectors and high-flux synchrotron radiation sources make this technique most useful for in situ, dynamical investigations. When using diffraction techniques to determine a diffusion coefficient, the principle of analysis entails a scattering theory and a kinetic model. The former allows the kinetic parameter(s) to be extracted from measured intensity, while the latter relates the kinetic parameter(s) to the diffusion coefficient(s). Three examples are demonstrated: (1) Palladium Silicide (Pd{sub 2}Si) Layer Growth on Silicon, (2) Decomposition of an Ni-12.5at%Si Superalloy, and (3) Short-range Ordering in Cu-Au Solid Solutions.

76

A compensating method of an imaging plate response to clinical proton beams

The description of the high energy particle telescope NINA for the study of cosmic ray nuclei is presented. The instrument will be installed on board of the Resource 01 satellite and will fly on a polar orbit at 690 Km. The telescope consists on a pile of 16 detecting planes each of them is composed by two silicon strip detectors with perpendicular strips and has a total area of 60x60mm{sup 2}. The experiment goals are the study of cosmic ray protons and nuclei in the energy range 12-100 MeV/amu. It will be sensitive to the anomalous component and will also make the observation of the large solar flare events and geophysical phenomena as well. This experiment is the first step of the program RIM whose goal is the satellite study of anti particles in primary cosmic rays.

1995-09-01

77

Development of real time personal neutron dosimeter with two silicon detectors

For charged particle irradiations, the response of an imaging plate (IP) changes around the Bragg peak. Therefore, an appropriate compensation is necessary for the evaluation of dose distribution formed by charged particles such as protons. In this paper, the response of IPs to clinical proton beams is investigated. An experimentally-obtained depth-dose distribution (an ordinary Bragg curve) by a silicon semiconductor detector (SSD) is employed to evaluate the compensation factors as a function of proton penetrating depth, i.e. residual range. A typical dose distribution in a water phantom formed by an L-shaped bolus is measured by IPs and corrected by using the information of those compensation factors; the residual proton range is successfully calculated by the pencil beam algorithm at an arbitrary point. The results show a good agreement with the measurements by the SSD within the rms error of 3.0%.

2002-04-01

78

A New Measurement of Kaonic Hydrogen X rays

The personal neutron dosimetry becomes more important with the increasing use of nuclear and accelerator facilities. The solid state track detector, film badge and thermo-luminescent dosimeter have widely been used as passive-type personal neutron dosimeters, but the real-time neutron dosimeter is strongly needed. A real time personal dosimeter which could give neutron dose equivalent over wide energy range from thermal to 10 odd MeV by using two neutron sensors has been developed by our group. For practical commercial product, some changes from these prototype sensors have recently been done by Fuji Electric Co. Ltd. The purpose of this work is the final performance test of the dosimeter just before sale. We checked again about the sensitivity in the monoenergetic neutron field from 8 keV to 15 MeV and in the neutron fields around a few accelerator facilities. (author)

1997-07-01

79

Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors

The $\\bar{K}N$ system at threshold is a sensitive testing ground for low energy QCD, especially for the explicit chiral symmetry breaking. Therefore, we have measured the $K$-series x rays of kaonic hydrogen atoms at the DA$\\Phi$NE electron-positron collider of Laboratori Nazionali di Frascati, and have determined the most precise values of the strong-interaction energy-level shift and width of the $1s$ atomic state. As x-ray detectors, we used large-area silicon drift detectors having excellent energy and timing resolution, which were developed especially for the SIDDHARTA experiment. The shift and width were determined to be $\\epsilon_{1s} = -283 \\pm 36 \\pm 6 {(syst)}$ eV and $\\Gamma_{1s} = 541 \\pm 89 {(stat)} \\pm 22 {(syst)}$ eV, respectively. The new values will provide vital constraints on the theoretical description of the low-energy $\\bar{K}N$ interaction.

2011-01-01

80

Resolution studies of a GEM-based TPC

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

2009-08-15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

81

Sonar : detector of submerged submarines.

Currently there are four different concept studies trying to optimise the detector for the requirements at the ILC. In three of these detector concepts a time projection chamber (TPC) is foreseen as the main tracking device. To achieve the intended spatial resolution of 100 {mu}m, micro pattern gas detectors (MPGD) are considered for gas amplification. The two different MPGDs discussed for the ILC TPC are Micro-Mesh Gaseous Detectors (Micromegas) and Gas Electron Multiplier foils (GEMs). The current thesis shows resolution studies with a TPC prototype equipped with a triple GEM readout structure. A hodoscope made up of silicon strip sensors gives a precision reference track, allowing an unbiased measurement of the spatial resolution. High statistics measurements have been conducted at the DESY test beam facility, which provides positrons with a tunable energy between 1 GeV and 6 ...

2006-12-15

82

Simulation of neutron detector efficiencies

Language: English ...

83

Handheld trace explosives detector.

No abstract prepared.

2002-03-01

84

Characterisation of thin films on rough steel substrates by FTIR microscopy and imaging

No abstract prepared.

2006-11-01

85

Silicon solar cell assembly

Complete text of publication follows. According to the new European regulations (Restrictions of Hazardous Substance Directive), there is an emerging demand for environmental friendly metal treatments instead on formerly used chromate conversion coating technique. The aim of the present investigations was to characterise and compare silicon containing protective thin layers on roughened galvanized steel surfaces (with average roughness of 0.7 microns), using FTIR microscopy and imaging techniques. The silicon containing coatings were produced either by Chemical Vapour Deposition (CVD) or by wet chemical treatment using liquid silane. FTIR techniques offer new possibilities in the characterisations and chemical mapping of differently coated thin films, besides SEM+EDS, AFM, nanoindentation, XPS measurements (P. Nemeth et al., Materials Science Forum, 589 (2008) 433-438). All measurements were carried out by a Varian FTS-7000 spectrometer with a ...

86

Spectrochemical analysis using infrared multichannel detectors

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

1979-01-01

87

CZT Detector and HXI Development at CASS/UCSD

Spectrochemical analysis using infrared multichannel detectors

2007-01-01

88

ACT Lectures on Detectors - Trigger and Data Acquisition (5/5)

CZT Detector and HXI Development at CASS/UCSD

2006-01-01

89

International Science & Technology Center (ISTC)

ACT Lectures on Detectors - Trigger and Data Acquisition (5/5)

2011-01-01

90

Low-Cost Crystal Silicon

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

91

The magnetic spectrometer PAMELA for the study of cosmic antimatter in space

Tensor polarization of the residual nucleus in the "6Li (#alpha#, #alpha#') "6Li (2.18 MeV, 3"+) reaction at E_#alpha# = 27.2 MeV

In the framework of the RIM (Russian Italian mission) program, PAMELA is the experiment devoted to the accurate measurement of the positron and antiproton spectra from the very low energy thresh-old of 100 MeV up to more than 50 GeV, and to hunt antinuclei with sensitivity better than 10{sup -7} in the helium/helium ratio. A permanent magnet equipped by microstrip silicon sensors, measures the particle momentum with MDR=400 GV/c on GF=25 cm{sup 2} sr. An accurate ToF system, a 19 X{sub o} deep imaging calorimeter, an aerogel Cherenkov counter and a TRD detector complement the spectrometer in order an efficient e{sup +-}/p{sup +-} separation and some light isotope identification capability. The PAMELA experiment will be carried out on a 700 km high polar orbit, on board of the Earth-observation meteor-3A satellite, to be launched at the end of 1988.

1995-09-01

92

Study of building materials impregnation processes by quasi-real-time neutron radiography

The experiment on the determination of the tensor polarization of the residual nucleus is described for the reaction "6Li (#alpha#, #alpha#') "6Li. It is based on the unique connection of polarization tensors t_l_m of the residual nucleus for the reaction (#alpha#, #alpha#') and the angular correlation function W (#omega#_1, #omega#_2) for #alpha#'-particle and decay product of this nucleus, where #omega#_1, #omega#_2 are motion directions of #alpha#'-particle and decay product. The angular correlations of #alpha#'-particle and deuteron are measured for the "6Li (#alpha#, #alpha#', d)"4He reaction on the 27.2 MeV #alpha#-particle beam. The recording system consists of six silicon detectors and provides the energy resolution about 0.8 MeV and the angular resolution #+-# 3 deg. The polarization tensors of the residual nucleus "6Li (2.185 MeV, 3"+) are determined as the result of measuring the angular correlations of products of the "6Li (#alpha#, ...

1999-01-01

93

A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

Neutron radiography (NR) is a useful non-destructive method for determination of hydrogen content in various building and technical materials. Monitoring of transport processes of moisture and hydrogenous liquids in porous building materials is enabled by fast, quasi-real-time NR methods based on novel imaging plate neutron detectors (IP-NDs). Hydrogen content in the samples is determined by quantitative analysis of measured profiles of neutron attenuation in the samples. Detailed description of quantitative NR method is presented by the authors in another accompanying contribution at this conference. Deterioration of building materials is originated by different processes that all require presence of water therefore it is essential to limit or prevent the transport of water through the porous material. In this presentation, results of a study of clay brick impregnation by silicone based hydrophobic agents will be presented. Quantitative ...

1999-11-03

94

High bandgap window layer for GaAs solar cells and fabrication process therefor

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge ...

1999-04-01

95

Properties of s-p and s-d type A-15 superconductors: a comparison

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power ...

1979-05-29

96

Indoor radon dose assessment for Osijek

In general there are actually two different types of A-15 compounds (A_3B) whose superconducting properties depend on whether the B atoms are transition elements (s-d type) or nontransition elements (s-p type). The properties in which the s-d type superconductors show marked differences in behavior from the s-p type include: (1) stoichiometry and range of composition, (2) the strong influence of N(O) on the stability and T/sub c/ of the phase, and (3), the effect of composition and atomic ordering on the T/sub c/ of the phase. These differences are discussed and a conclusion presented.

97

The Silicone Conundrum Part II: ?Low Outgassing? Silicones

After ten years' investigation of radon's seasonal variation at three very different locations, as well as radon concentration measurements in kindergartens, schools, air-raid shelters and cellars, systematic indoor radon measurements were undertaken in dwellings (residential buildings) of Osijek (East Croatia, 130andpuncsp; omitted000 citizens). Indoor radon was measured by means of the LR-115 SSNT detector at 48 town locations that gave an arithmetic mean of 71.6 Bq/m{sup 3}, standard deviation of 44.0 Bq/m{sup 3} and geometric mean of 60.1 Bq/m{sup 3}, for the radon concentration range from 22.7 to 185.6 Bq/m{sup 3}. Radon measurements, performed by the silicon Radhome detector, did not differ significantly. The empirical frequency distribution of radon concentrations, with the class width of 20 Bq/m{sup 3}, was in accordance with the theoretical log-normal distribution which was shown with the ...

1999-05-01

98

British Library Electronic Table of Contents (United Kingdom)

Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.

2011-01-01

99

Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscattering

TARGET SIGNAL DETECTOR AND DETECTING METHOD

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

100

J-STORE (Japan)

Full Text Available

2005-12-02

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

101

Semiconductor Radiation Detectors with Frisch Collars and Collimators for Gamma Ray Spectroscopy and Imaging

Performance of the central calorimeter of the COSY-TOF detector

To study CdZnTe as a high energy resolution gamma ray detector with a novel new design, and to build a detector array from the new detector design

2006-12-04

102

Eta-nucleus bound state study and the detector ENSTAR

No abstract prepared.

2002-03-01

103

Estimation of the radiation damages of the Uppsala spectator detector

No abstract prepared.

2002-03-01

104

Efficiency of the second scintillator plane of the ANKE forward detector

No abstract prepared.

2002-03-01

105

Determination of the ANKE forward detector MWPC efficiency

No abstract prepared.

2002-03-01

106

Small world when building a particle detector prototype, the devil is in the tiny details

No abstract prepared.

2002-03-01

107

CERN Multimedia

Small world when building a particle detector prototype, the devil is in the tiny details

2004-01-01

108

Photodiode Scintillation Detector for Anti-Coincidence Shielding

Self-organization of nickel atoms in silicon

Photodiode Scintillation Detector for Anticoincidence Shielding An important goal of space research is to understand the physics involved in the activity of ...

109

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

2011-01-01

110

Silicon MOS inductor

Selective radiochemical separation for indium determination at ppb levels in ion-implanted semiconductor-grade silicon

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

1981-01-01

111

Mesoporous Silicon-Based Anodes for High Capacity, High - NASA

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

1982-12-23

112

Deep donor states of muonium in silicon and germanium (status report exp SC81)

Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...

113

Pitting corrosion resistance of silicon-implanted stainless steels

Deep donor states of muonium in silicon and germanium (status report exp SC81)

1979-01-01

114

Optical, Mechanical and Tribological Properties of Boronnitride Dispersed Silicon Nitride Ceramics

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

115

KoreaScience (Korea)

Full Text Available

2010-08-01

116

Method of studying the SIALON wetting with oxides of silicon, aluminium, calcium and titanium

Influence of germanium and oxygen impurities on the radiation hardening of monocrystalline silicon

Short communication.

1993-10-04

117

Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors

... defects doped materials germanium infrared radiation monocrystals neutron

118

Fouling Study of Silicon Oxide Pores Exposed to Tap Water

No abstract prepared.

2006-07-01

119

Diagnostic Analysis of Silicon Photovoltaic Modules after 20--Year Field Exposure

We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

2007-07-12

120

Computer simulation of charging the silicon dioxide surface and subsurface layers by electron bombardment

No abstract prepared.

2000-09-25

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

121

Boron profiles in amorphous and crystalline silicon

Not Available

2011-08-01

122

BONDING SELF-ASSEMBLED, COMPACT ORGANOPHOSPHONATE MONOLAYERS TO THE NATIVE OXIDE SURFACE OF SILICON

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

1989-01-01

123

Advanced Ceramic Technology

No abstract prepared.

2003-01-01

124

Operation of an 18-fold segmented n-type HPGe detector in liquid nitrogen

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

2007-02-01

125

From tomography to voludensitometry: radiation detectors for industrial control and medical instrumentation; De la tomographie a la voludensitometrie: les capteurs pour le controle industriel et l`instrumentation medicale

For the first time a segmented n-type HPGe detector was operated directly submerged in liquid nitrogen over a long period. As this kind of detector is envisioned to be used in GERDA phase II, it was operated with a low mass signal cable with snap-contacts and mounted in a low-mass copper holder. The detector performance was stable over 146 days, indicating that neither detector nor contacts deteriorated.

2009-11-01

126

Bragg curve spectroscopy detector for particle identification

In this article, the author presents the main technological solutions, available or in development, on X-ray detectors in order to obtain a digital image in biomedical radiography or in industrial radiography: linear x-ray detectors and bidimensional x-ray detectors (memory radioluminescent screens, matrix plan detectors).

1993-12-01

127

Vacancy complex scattering mobility of holes in IR-photoexcited p-type ZnTe

The operation principle, construction and characteristics of the Bragg curve spectroscopy detector (BCS detector) are described. The electric field of the BCS detector is parallel to the particle trajectories. The detector was tested by 8.78 MeV and 6.02 MeV #alpha# particles from a ThC-ThC's source. The energy resolutions are 1.5% and 2.6% respectively for two groups of #alpha# particles, and the charge resolution is 2.7%. Further test experiments with heavy ions will be arranged.

128

Properties of the passive films on cold worked stainless steels in conditions of susceptibility to stress corrosion cracking

Conductivity and Hall effect measurements were made in dark and IR-photoexcited p-type ZnTe samples between 77 and 300 K. Acceptor vacancy complexes of activation energies 0.09-0.1 eV were found to be present in the photoexcited samples. Different possible scattering mobilities were considered for both samples to explain the observed hole mobility. In the photoexcited sample a scattering mobility due to vacancy complexes was suggested for the first time to explain the results. The scattering centres were associated with native vacancy complexes segregated at the dislocations sites. The expression for the complex scattering mobility has been deduced using the curve fitting method to be {mu}{sub C}=(6.6x10{sup -11})T{sup 5} e{sup 725/T}. (orig.).

1990-10-01

129

Symmetries in nuclei near the centre of the f{sub 7/2} shell

Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)

2004-01-01

130

Infrared spectroscopy analysis of MgO-doped silicon nitride

High-spin states in the mirror pair nuclei {sup 49}Cr and {sup 49}Mn and their cross-conjugate partners, the mirror pair {sup 47}V and {sup 47}Cr have been investigated using experimental {gamma}-ray spectroscopic techniques. The combination of high-efficiency EUROBALL cluster Germanium detectors and clean exit-channel gating afforded by a 31-element silicon ball used in conjunction with a 15-detector neutron wall allowed a revision and extension to the energy level schemes of all four nuclei up to J{sup {pi}}=31{sup -}/2. The difference in excitation energy between states of equivalent spin in the parent nucleus and its analogue partner have thus been established for both mirror pairs up to the f{sub 7/2}-shell band terminating state for the first time. This difference is assumed to be due almost entirely to the Coulomb effect and is therefore called the Coulomb energy difference (CED). The variation in the CED with spin ...

1998-10-01

131

First Measurements of the Inclined Boron Layer Thermal-Neutron Detector for Reflectometry

Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.

1997-12-31

132

First Measurements of the Inclined Boron Layer Thermal-Neutron Detector for Reflectometry

A prototype detector based on the inclined boron layer principle is introduced. For typical measurement conditions at the Liquids Reflectometer at the Spallation Neutron Source, its count rate capability is shown to be superior to that of the current detector by nearly two orders of magnitude.

2010-01-01

133

Gamma Radiation Detectors of the TA-55 Waste Line Monitoring System

A prototype detector based on the inclined absorber layer principle is introduced. For the Liquids Reflectometer at the Spallation Neutron Source, it is shown to be a significant improvement over its current detector, which imposes an instantaneous count rate limitation of 50 kcps.

2008-10-01

134

Reaction cross-section and reduced strong absorption radius measurements of neutron-rich nuclei in the vicinity of closed shells N=20 and N=28

This report covers the gamma detectors, measurement instrumentation, and testing results of a system developed at Los Alamos National Laboratory. This system monitors the process liquid waste streams at the Plutonium Facility (TA-55) for the presence of radioactive contamination. The detectors are at various points on the acid, caustic, and industrial waste lines. Two of the detectors are on the sanitary sewer lines from the facility. A custom interface unit associated with these two detectors furnishes the facility operation center with a notification of the detection of material. All of the detectors furnish measurement information to a central computer system for storage and trending.

1999-06-01

135

Measurement of the L sub 2 - L sub 3 Coster-Kronig transition probability in Tm( Z =69)

The energy-integrated reaction cross-sections of several neutron-rich nuclei ({sup 17-22}N, {sup 19-24}O, {sup 21-27}F, {sup 23-30}Ne, {sup 26-33}Na, {sup 28-35}Mg, {sup 31-38}Al, {sup 33-40}Si, {sup 36-42}P, {sup 39-44}S, {sup 42-45}Cl, {sup 45,46}Ar), measured at intermediate energy (30-65 A-bar MeV), via direct method, are presented. Silicon detectors have been used as the active target as well as for particles identification. The reduced strong absorption radii r{sub 0}{sup 2} are extracted and compared to the data available from the literature. New measurements for 19 nuclei ({sup 27}F, {sup 27,30}Ne, {sup 33}Na, {sup 28,34-35}Mg, {sup 36-38}Al, {sup 38-40}Si, {sup 41-42}P, {sup 42-44}S, {sup 45}Cl) are revealed. From the study of the isospin dependence of the reduced strong absorption radius, a new quadratic parameterisation of the nuclear radii in the closed shell regions N=8 and N=28, is proposed. According to this parameterisation, the ...

2006-12-11

136

Measurement of the L sub 2 - L sub 3 Coster-Kronig transition probability in Tm( Z =69)

The {ital L}{sub 2}-{ital L}{sub 3} Coster-Kronig transition probability ({ital f}{sub 23}) in Tm was measured by multiparameter {ital K} versus {ital L} x-ray coincidence techniques. The Tm x rays were obtained from a radioactive source of {sup 169}Yb and were detected with cooled germanium and silicon detectors of high-energy resolution. Corrections were applied for the contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak and for the contribution of unresolved {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak. The contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak was determined solely from the results of the coincidence measurements using a method of data analysis which was previously described elsewhere. The contribution of {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak was determined from the coincidence measurements and published values of ...

1989-11-01

137

Elastic recoil detection analysis of ferroelectric films

The {ital L}{sub 2}-{ital L}{sub 3} Coster-Kronig transition probability ({ital f}{sub 23}) in Tm was measured by multiparameter {ital K} versus {ital L} x-ray coincidence techniques. The Tm x rays were obtained from a radioactive source of {sup 169}Yb and were detected with cooled germanium and silicon detectors of high-energy resolution. Corrections were applied for the contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak and for the contribution of unresolved {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak. The contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak was determined solely from the results of the coincidence measurements using a method of data analysis which was previously described elsewhere. The contribution of {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak was determined from the coincidence measurements and published values of ...

1989-11-01

138

Femtosecond Laser Passivation of GaAs Detector Material

There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the ...

1996-12-31

139

Selective emitter using porous silicon for crystalline silicon solar cells

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

2008-06-07

140

Schottky barrier and homojunction gallium arsenide solar cells

This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...

2009-06-15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

141

Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

1983-01-01

142

Annealing of silicon implanted with arsine and hydrogen ions

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

2008-05-19

143

Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

2003-01-01

144

Verification of lithium detector efficiency using DD neutron

A method, system and a radiation detector system for use therein are provided for determining the depth distribution of radiation-emitting material distributed in a source medium, such as a contaminated field, without the need to take samples, such as extensive soil samples, to determine the depth distribution. The system includes a portable detector assembly with an x-ray or gamma-ray detector having a detector axis for detecting the emitted radiation. The radiation may be naturally-emitted by the material, such as gamma-ray-emitting radionuclides, or emitted when the material is struck by other radiation. The assembly also includes a hollow collimator in which the detector is positioned. The collimator causes the emitted radiation to bend toward the detector as rays parallel to the detector axis of the detector. The ...

2003-03-04

145

Use of signal delay of one of detectors in two-channel radiometric flaw detector

The detection efficiency of a lithium glass detector was calculated using MCNP code, and the calculation was compared with the published results in Pulsed Sphere Plan. A lithium glass detector of our own was made, and its neutron efficiency was calculated. The calculated neutron efficiency was verified with both pulsed and steady DD neutrons. Characteristics of Neutron response of "6Li detector was discussed. (authors)

2005-08-01

146

Resonant-mass detectors of gravitational radiation

A possibility is considered or reducing the surface heterogeneity effect of an item being tested on the result of radiation flaw detection by means of signal delay of one of detectors in a two-channel radiometric flaw detector. The exposure of a translationally moving item has been studied as well as an external exposure of a rotating hollow item.

147

Radon concentration measurements in a radon chamber for biological treatment using track detectors

A network of second-generation low-temperature gravitational radiation detectors is nearing completion. These detectors, sensitive to mechanical strains of order 10"-"1"8, are possible because of a variety of technical innovations that have been made in cryogenics, low-noise superconducting instrumentation, and vibration isolation techniques. Another five orders of magnitude improvement in energy sensitivity of resonant-mass detectors is possible before the linear amplifier quantum limit is encountered. 33 references, 3 figures, 1 table.

1987-07-01

148

Presentation of random process at the output of a scintillation detector

Short communication.

1992-09-01

149

Optimization of the spectator detector arrangement for the pn {yields} pn{eta}' measurements at COSY-11

(1973). USSR Ovcharenko, AM Nedavnij, OI Kapranov, BI Tomskij

150

Investigations and development of gaseous radiation detectors; Badania i rozwoj konstrukcji gazowych detektorow promieniowania

No abstract prepared.

2002-03-01

151

No abstract prepared

1998-12-31

152

ASE FILE

Wire chamber degradation at the Argonne ZGS

radionuclide X-ray fluorescence analysis: the resolving power of the ... The radiation detectors used in radionuclide X-ray fluorescence ...

153

Wire chamber degradation at the Argonne ZGS

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

1986-01-16

154

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

1986-01-01

155

CERN Multimedia

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

1999-01-01

156

Single Molecule Source Reagents for CVD of Beta Silicon Carbide.

Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

1991-01-01

157

Influence of Dopants on Characteristics of X-Ray Detectors Fabricated from Indium-, Gallium-, and Chlorine-Doped Cadmium Telluride Single Crystals

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

2008-01-01

158

Development of a small scintillation detector with an optical fiber for fast neutrons

Counting characteristics of X-ray detectors fabricated from indium-doped, gallium-doped, and chlorine-doped CdTe have been investigated. The detectors fabricated from indium-doped and gallium-doped crystals showed radiation-induced polarization, namely, a progressive decrease of count rate with an increase of photon fluence in the high-photon-fluence region, while the detectors fabricated from chlorine-doped crystals did not. Results from current-voltage characteristics of the detectors indicated that the different counting characteristics of these detectors originated from the difference in internal electric fields in each detector.

1995-08-01

159

Three-dimensional damage distributions in ion-irradiated silicon and pyrolytic graphite as revealed by modified tomography in combination with RBS and NDP

To investigate the characteristics of a reactor and a neutron generator, a small scintillation detector with an optical fiber with ThO_2 has been developed to measure fast neutrons. However, experimental facilities where "2"3"2Th can be used are limited by regulations, and S/N ratio is low because the background counts of this detector are increase by alpha decay of "2"3"2Th. The purpose of this study is to develop a new optical fiber detector for measuring fast neutrons that does not use nuclear material such as "2"3"2Th. From the measured and calculated results, the new optical fiber detector which uses ZnS(Ag) as a converter material together with a scintillator have the highest detection efficiency among several developed detectors. It is applied for the measurement of reaction rates generated from fast neutrons; furthermore, the absolute detection efficiency of this ...

2011-02-01

160

The crystalline-silicon photovoltaic R&D project at NREL and SNL

Short communication.

1995-12-31

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

161

Strained silicon for quantum computing

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

1996-12-31

162

Mechanical Properties of Microelectronics Thin Films: Silicon ...

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

2002-03-07

163

Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

1989-10-01

164

Efficiency of silicon and GaAs concentrator solar cells operated inside integrating cavity receivers

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

2006-03-27

165

Abstracts by Mission Directorate - NASA

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

1991-06-01

166

ANALYSIS OF BENDING CREEP BEHAVIOR OF SILICON ...

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

167

A Two-Step Etching Method to Fabricate Nanopores in Silicon

... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...

168

7 - NASA Technical Reports Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

2008-01-01

169

Silicon effect on corrosion resistance of austenite stainless steels in strongly oxidizing media containing fluoride and phosphate admixtures

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

170

Nonformity of the electron density in amorphous silicon films

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

171

Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

1985-12-01

172

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

173

Joined ceramic product

Electrochemical stability of silicon/carbon composite anode for lithium ion batteries

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

2001-01-01

174

Dielectric barrier discharge using corona-modified silicone rubber

Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.

2007-04-20

175

Development of high resolution imaging detectors for X-ray astronomy

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

2008-10-01

176

Development of high resolution imaging detectors for X-ray astronomy

High (spatial) resolution imaging detectors for X-ray astronomy were developed. Several prototype detectors built and their feasibility and baseline performance were assessed. Two of these detector types are proposed for investigations on the advanced X-ray astrophysics facility (AXAF). The readiness of a new X-ray imaging system, the charge coupled device (CCD) imaging specctrometer is outlined, and state of the art performance parameters for microchannel plate (MCP) and CCD detectors are measured. Laboratory facilities and procedures for coating MCP are developed general high resolution imagery systems are analyzed.

1985-03-01

177

Core simulations using actual detector readings for a Canada deuterium uranium reactor

High (spatial) resolution imaging detectors for X-ray astronomy were developed. Several prototype detectors built and their feasibility and baseline performance were assessed. Two of these detector types are proposed for investigations on the advanced X-ray astrophysics facility (AXAF). The readiness of a new X-ray imaging system, the charge coupled device (CCD) imaging specctrometer is outlined, and state of the art performance parameters for microchannel plate (MCP) and CCD detectors are measured. Laboratory facilities and procedures for coating MCP are developed general high resolution imagery systems are analyzed.

1985-01-01

178

Supercritical Fluid Immersion Deposition: A New Process for Selective Deposition of Metal Films on Silicon Substrates

This paper reports that, to obtain better simulation results for a Canada deuterium uranium (CANDU) reactor operation, a new simulation method is developed that uses actual detector readings as a correction factor. Detector readings from a CANDU reactor are used to correct the calculated flux distribution during core calculation iterations. A suitable function is found to describe the relationship between the detector flux and the fluxes of mesh points around the detector. The new simulation method is tested by performing numerical calculations for the Wolsung reactor (a CANDU-600). The results show that the new method predicts the core state more accurately with fewer iterations.

1991-02-01

179

Is cold better ? - exploring the feasibility of liquid-helium-cooled optics.

Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

2005-01-01

180

Quantum entanglement, recoherence and information flow in an accelerated detector - quantum field system: Implications for black hole information issue

Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

1999-09-30

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

181

Depth profiling using C{sub 60} {sup +} SIMS-Deposition and topography development during bombardment of silicon

We study an exactly solvable model where an uniformly accelerated detector is linearly coupled to a massless scalar field initially in the Minkowski vacuum. Using the exact correlation functions we show that as soon as the coupling is switched on one can see information flowing from the detector to the field and propagating with the radiation into null infinity. By expressing the reduced density matrix of the detector in terms of the two-point functions, we calculate the purity function in the detector and study the evolution of quantum entanglement between the detector and the field. Only in the ultraweak coupling regime could some degree of recoherence in the detector appear at late times, but never in full restoration, as an earlier work seems to suggest. We explicitly show that under the most general conditions the detector never ...

2007-01-01

182

Analysis of the Semileptonic Decay D0 --> anti-K0 pi- mu+ nu

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

2006-07-30

183

Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates

This thesis describes the analysis of the semileptonic decay D{sup 0} {yields} {bar K}{sup 0} {pi}{sup -} {mu}{sup +}{nu} using FOCUS data. FOCUS is a fixed target experiment at Fermilab that studies the physics of the charm quark. Particles containing charm are produced by photon-gluon fusion from the collision of a photon beam on a BeO target. The experiment is characterized by excellent vertex resolution and particle identification. The spectrometer consists of three systems for track reconstruction (two silicon systems and one multiwire proportional chamber system) and two magnets of opposite polarity. The polarity of the magnet is such that the events of e{sup +}e{sup -} pairs produced in the target (which constitutes the main background) travel through a central opening in the detectors without interactions. Particle momentum is measured from the deflection angle in the magnets. Three multicell Cerenkov counters are used for charged ...

2004-11-01

184

Semiconductor properties and protective role of passive films of iron base alloys

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the ...

185

Semiconductor properties and protective role of passive films of iron base alloys

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the ...

2007-01-15

186

Properties of the passive films on cold worked stainless steels in conditions of susceptibility to stress corrosion cracking; Proprietes des couches passives formees sur les aciers inoxydables ecrouis dans des conditions de susceptibilite a la corrosion sous contrainte

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other ...

2007-01-01

187

Continuous wave operation (77 K) of yellow (583. 6 nm) emitting AlGaInP double heterostructure laser diodes

Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)

2004-06-01

188

Segmented focal plane detector for light and heavy ions

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

1986-03-03

189

Six orders of magnitude dynamic range in capillary electrophoresis with ultrasensitive laser-induced fluorescence detection

A segmented focal plane detector for an Enge split-pole spectrograph has been developed for the study of breakup reactions at very low relative energies. It consists of a 61 cm long segmented position-sensitive parallel plate avalanche counter backed by a large Bragg curve detector. A segmented plastic scintillator is mounted behind the anode of the Bragg curve detector and is used for particle identification of low-ionizing particles. The dead space between the two sections of the focal plane detector is 2.5 mm. The intrinsic position resolution of the detector is 1 mm. The intrinsic energy resolution depends on the energy of the incident ion and can be as good as 0.55%. The nuclear charge and mass resolutions are 0.3 e and 0.3 u, respectively. (orig.).

1992-06-15

190

Focal plane detector for reactions with medium weight projectiles

An ultrasensitive laser-induced fluorescence detector was used with capillary electrophoresis for the study of 5-carboxy-tetramethylrhodamine. The raw signal from the detector provided roughly...Full Text Available

2009-12-15

191

Developments of heavy-ion gas detectors at LNL

A new focal plane detector for an Enge split pole spectrograph has been developed which is able to resolve individual elements and isotopes up to the mass 100 region. It consists of a 60 cm long position sensitive parallel plate avalanche counter backed by a large Bragg curve detector. Compared with other position sensitive focal plane counters the new detector system has a very good time resolution (less than 300 ps) and can be operated at much higher counting rates (up to 25 kHz). The intrinsic resolution of the position detector is less than 1 mm. In addition to the energy and the nuclear charge signal obtained from the Bragg curve detector the angle of incidence into the detector can be measured with an accuracy of better than 1/sup 0/. The detector has already been used in a variety of experiments where good timing, counting rate ...

1988-12-01

192

Development of a dual-detector X-ray imaging system for phase retrieval study

The most important developments in gaseous detectors at LNL are reviewed. Some aspects of timing, pulse height and position resolutions of avalanche counters are reported. The experimental work on heavy-ion identification by Bragg curve spectroscopy is summarized.

1984-05-01

193

Based on a recently introduced phase X-ray imaging approach, a dual-detector prototype was developed for in-line X-ray phase imaging and phase retrieval utilizing a micro-focus X-ray source and two computed radiography (CR) cassette detectors. The system was built on a horizontal optical rail to facilitate manual adjustment of the positions of the X-ray source, the sample and the detectors. The novel design of the detector-1 is essential, it detects a portion of radiation to form an attenuation image; allows the rest of radiation to reach the detector-2 to form a phase contrast image, and the two images are used to retrieve a phase map. The two detectors are balanced for optimal phase-retrieval with reasonable radiation dose to the object to be imaged. The system was examined in terms of the linearity, the fractions of the X-ray photons detected by the two ...

2007-01-01

194

Detection of explosives

Conventional detectors for a photon-photon collider

An analyser for detecting explosives has at least one neutron source and a plurality of gamma ray detectors. An article to be analysed is moved adjacent the source and detectors and is subjected to neutrons which generate gamma rays from any nitrogen in the article. The gamma rays are detected and analysed to determine the nitrogen concentration within the article. In order to achieve an area of uniform detection there are a plurality of detectors equidistant both from the or each source and from the article to be analysed. In order to avoid a decrease in sensitivity away from the source(s) and detectors there may be a second opposing array of source(s) and detectors on the opposite side of the article. For greatest uniformity of detection, a source in one array opposes a detector in the other array and vice versa. Transmission of radiation from the analyser is ...

1991-03-13

195

Comparison of Detector Intrinsic Spatial Resolution Characteristics for Sensor on the Entrance Surface and Conventional Readout Designs

Detectors for a photon-photon collider are envisaged using as guide-lines the physics goals and the interaction point environment. Production of SUSY Higgs scalar and pseudo-scalar is emphasized. Some aspects of the interaction point environment are discussed. ((orig.)).

1995-02-01

196

UNFBENJ: on-line, real-time neutron spectrum unfolding for Benjamin detectors

We report on a high resolution, monolithic crystal PET detector design concept that provides depth of interaction (DOI) positioning within the crystal. Our design utilizes a novel sensor on...Full Text Available

2010-01-01

197

The virtual fast-ion loss detector

(Jun 1978). United States Miller, H. Univ. of Missouri, Columbia Peterman,

1978-06-18

198

Radionuclide X-ray fluorescence analysis using semiconductor detectors

English 2009 p. 79 Ukraine Brudgam, M. Lauber, Ph. Garcia Munoz, M.

2009-09-21

199

Parameter optimization of a planar BEGe detector using Monte Carlo simulations

Czech May 1979. p. 32-33. Czechoslovakia Benada, J. Spacek, B. Ustav

1979-05-01

200

Method and system for detecting explosives

This work reports on the use of three state-of-the-art Monte Carlo codes (MCNPX, PENELOPE, FLUKA) in the efficiency calibration of a Broad-Energy Germanium (BEGe) detector. Initial discrepancies found between the experimental and computational efficiency values are related to the poor knowledge of some physical parameters of the detector (dead-layers, crystal dimensions, etc.). As a consequence, a sensitivity analysis was carried out. Each parameter was systematically analyzed, and an accurate model of the detector was determined. The obtained results are consistent, allowing this model to be used in computational efficiency calibrations of the equipment at stake.

2010-11-21

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201

GCR-induced Photon Luminescence of the Moon: The Moon as a CR Detector

A method of detecting explosives in a vehicle includes providing a first rack on one side of the vehicle, the rack including a neutron generator and a plurality of gamma ray detectors; providing a second rack on another side of the vehicle, the second rack including a neutron generator and a plurality of gamma ray detectors; providing a control system, remote from the first and second racks, coupled to the neutron generators and gamma ray detectors; using the control system, causing the neutron generators to generate neutrons; and performing gamma ray spectroscopy on spectra read by the gamma ray detectors to look for a signature indicative of presence of an explosive. Various apparatus and other methods are also provided.

2009-03-10

202

Explosives detection system and method

We report on the results of a preliminary study of the GCR-induced photon luminescence of the Moon

2007-01-01

203

Detection threshold for alpha-particles on the solid-state track detector of celluloid films

A method of detecting explosives in a vehicle includes providing a first rack on one side of the vehicle, the rack including a neutron generator and a plurality of gamma ray detectors; providing a second rack on another side of the vehicle, the second rack including a neutron generator and a plurality of gamma ray detectors; providing a control system, remote from the first and second racks, coupled to the neutron generators and gamma ray detectors; using the control system, causing the neutron generators to generate neutrons; and performing gamma ray spectroscopy on spectra read by the gamma ray detectors to look for a signature indicative of presence of an explosive. Various apparatus and other methods are also provided.

2007-12-11

204

Advances in imaging THGEM-based detectors

(Apr 1974). Japan Murakami, Akira . Saga Univ. (Japan). Dept. of

205

A new technique for radon measurement based on a combination of a track-etch detector and activated charcoal

We report on recent measurements with Thick GEM-like (THGEM)-based imaging detectors. The THGEM is a robust gaseous electron multiplier similar to GEM but with larger dimensions. It has high electron multiplication, of 105 and 107 in single- and double-THGEM structure, respectively, fast signals and ?10MHz/mm2 counting rate capability. It can be produced in any shape and over large area. In view of many possible applications of THGEM-based imaging detectors, in particle physics and beyond, we have recently studied the localization properties of a 2D 10x10cm2 detector. The results of these studies are presented.

2007-03-01

206

Using neutron-activation detectors with fissionable nuclides

A new technique for radon measurement in the natural environment was investigated. It is based on the use of activated charcoal and a track-etch detector. The charcoal acts as a radon collector from the air and the track-etch detector as a recorder of the alpha particles emitted by radon and its decay products. Our preliminary results show that the response of the new dosimeter to radon, using Deodorant activated charcoal (TOK, Yugoslavia) and a CR-39 track-etch detector, is 1.4 tracks cm{sup -2}/Bqm{sup -3}d, which is about eight times higher than that obtained with a standard track-etch dosimeter. (author).

1991-01-01

207

Test of superconducting Nb/Al bilayers as particle detectors

Presented are results of a test of a method for measuring neutron fluences using detectors with fissionable nuclides. The investigations show the soundness of of using neutron-activation detectors of the type Am for mesurements in nuclear installations for values of thermal-neutron fluence of from 10/sup 13/ to 10/sup 20/ neutrons/cm/sup 2/ with exposure for up to several months. The proposed method can be used for prolonged measurements in strong fields of both thermal and fast neutrons.

1986-09-01

208

Position detector design using an electrostatic application of ANSYS[sup TM

Superconducting thin film particle detectors can be very attractive due to the low sensitivity to radiation damage. We describe the fabrication procedure and the characterization of Nb/Al bilayers as particle detectors. First steady and dynamical results are reported from tests of 5 MeV alpha-particle detection.

2000-04-07

209

Performance of CDF calorimeter simulation for Tevatron Run II

The design of beam position monitor (BPM) stripline detectors has been enhanced by using the finite element code ANSYS[sup TM]. Available from Swanson Engineering, ANSYS[sup TM] was developed to solve Poisson's equation in stress and thermal analysis applications. The code is readily adaptable to solving electrostatic problems. The designs of several beam detectors were iterated by calculating electrode capacitances and characteristic impedances to better than 1% accuracy.

1994-10-10

210

Neutronic detection device with extended flux range for control of nuclear reactors. Dispositif de detection neutronique a dynamique etendue pour le controle et la commande des reacteurs nucleaires

The upgraded CDF II detector has collected first data during the initial operation of the Tevatron accelerator in Run II. The simulation of the CDF electromagnetic and hadronic central and upgraded plug (forward) calorimeter is based on the Gflash calorimeter parameterization package used within the GEANT based detector simulation of the Run II CDF detector. We present the results of tuning the central and plug calorimeter response to test beam data.

2002-09-19

211

Fundamental understanding of aging processes Review of the workshop results

The neutron detector is cased in a metal envelop and has one detector with a very sensitive fission chamber and a second detector with a fission chamber less sensitive that the first one and a boron coated ionisation chamber for reducing gamma radiation detection.

1992-06-12

212

Bragg curve spectroscopy in a 4? geometry

A study on the aging process of gas detectors was presented. How the development of more performing but delicate detectors, the use of faster but aggressive gases, and the need to cover large areas, led to unexpected problems was discussed. Various methods for curing aged detectors were also highlighted. (Edited abstract) 37 Refs.

2003-01-01

213

Bragg curve spectroscopy in a 4. pi. geometry

Ionization counters employing Bragg curve spectroscopy have been constructed for use in a 4? geometry. These detectors compare very favorably in terms of both energy and charge resolution with small solid angle devices. These detectors have a large dynamic range because they are backed by scintillation detectors, and are thus capable of detecting and identifying particles with energies from 1 MeV/nucleon up to 200 MeV/nucleon.

1991-02-01

214

Bragg curve spectroscopy in a 4#pi# geometry

Ionization counters employing Bragg curve spectroscopy have been constructed for use in a 4{pi} geometry. These detectors compare very favorably in terms of both energy and charge resolution with small solid angle devices. These detectors have a large dynamic range because they are backed by scintillation detectors, and are thus capable of detecting and identifying particles with energies from 1 MeV/nucleon up to 200 MeV/nucleon. (orig.).

1991-02-01

215

Rutherford backscattering study of the oxidation of palladium silicide on amorphous silicon substrates

Ionization counters employing Bragg curve spectroscopy have been constructed for use in a 4#pi# geometry. These detectors compare very favorably in terms of both energy and charge resolution with small solid angle devices. These detectors have a large dynamic range because they are backed by scintillation detectors, and are thus capable of detecting and identifying particles with energies from 1 MeV/nucleon up to 200 MeV/nucleon. (orig.).

216

Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

217

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...

2003-12-31

218

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

219

Characterization of arsenic dose loss at the Si/SiO{sub 2} interface

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

1993-07-16

220

Characterization of arsenic dose loss at the Si/SiO_2 interface

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

2000-03-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

221

Adaptive Waveform Correlation Detectors for Arrays: Algorithms for Autonomous Calibration

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

2000-03-01

222

Ten-nanometer surface intrusions in room temperature silicon

Waveform correlation detectors compare a signal template with successive windows of a continuous data stream and report a detection when the correlation coefficient, or some comparable detection statistic, exceeds a specified threshold. Since correlation detectors exploit the fine structure of the full waveform, they are exquisitely sensitive when compared to power (STA/LTA) detectors. The drawback of correlation detectors is that they require complete knowledge of the signal to be detected, which limits such methods to instances of seismicity in which a very similar signal has already been observed by every station used. Such instances include earthquake swarms, aftershock sequences, repeating industrial seismicity, and many other forms of controlled explosions. The reduction in the detection threshold is even greater when the techniques are applied to arrays since stacking can be performed on the ...

2009-07-23

223

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

2002-01-01

224

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

2005-12-15

225

Selective emitters for thermophotovoltaic solar energy conversion

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

2005-12-15

226

Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

1983-12-01

227

Effect of mineralizer on the nitridation of sialon-bonded silicon carbide products

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

2005-11-14

228

Whispering gallery modes in silicon-nanocrystal-coated silica microspheres

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

229

The effect of neutron dose and boron doping on X-ray diffraction in neutron irradiated silicon and germanium

Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.

2007-10-15

230

Surface activity and water repellency properties of cleavable-modified silicone surfactants

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

231

British Library Electronic Table of Contents (United Kingdom)

A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...

2006-01-01

232

Summary of NSF Workshop on Research Opportunities in Manufacturing in the Process Industries

Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

233

Role of MeV ion implantation in limiting transient enhanced diffusion of boron atoms in silicon

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

234

Recent advances in silicon-germanium alloy technology and an assessment of the problems of building the modules for a radioisotope thermoelectric generator

English Jul 2001 p. 143-144 China Liu Changlong Academia Sinica,

2001-07-01

235

PolyRAD Space Radiation Shield for Commercial-Off-The

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

236

Phonon - Drag Thermopo wer in Dilute Copper Alloys - NASA ...

Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...

237

Performance of ceramics in ring/cylinder applications

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

238

Non-linearity and hysteresis of Hall effect in magnetorheological suspensions with conducting carrier

In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.

1987-01-01

239

Investigation of lattice strains in layered structures containing porous silicon

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

2003-08-01

240

Integrated Optics Anisotropic Waveguides and Devices

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

2001-09-23

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

241

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF_2"+ ion implantation into silicon

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

1989-04-30

242

Effect of recoil implantation of oxygen on boron enhanced diffusion in silicon

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

2002-01-01

243

Effect of Si_3N_4 whisker and SiC platelet addition on phase transformation and mechanical properties of the #alpha#/#beta# sialon matrix composites

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

1989-04-25

244

Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

245

Determination of the hydrogen content of a-Si films by infrared spectroscopy and 25 MeV #alpha#-particle elastic scattering

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

2006-03-06

246

Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

247

Chromium-Manganese Nonmagnetic Steels

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

1997-07-01

248

International Science & Technology Center (ISTC)

Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures

249

Boron diffusion in amorphous silicon

Boron diffusion in amorphous silicon

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

2005-12-05

250

Adhesive wear of iron chromium nickel silicon manganese molybdenum niobium alloys with duplex structure. Untersuchung von Eisen-Chrom-Nickel-Silizium-Mangan-Molybdaen-Niob-Legierungen mit Duplexgefuege auf adhaesiven Verschleiss

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

2005-12-05

251

Acrobat Distiller, Job 7 - GLTRS - NASA

Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

1991-11-01

252

8 - NASA Technical Reports Server

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

253

Position sensitive detection of individual nuclear particle scintillations using image intensifier tubes

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

254

Development and operational experience of traveling in core probe drive for flux scan of 540 MWe PHWR of Tarapur

An imaging position sensitive detector for charged particles, neutrons, X-and gamma rays has been developed. The novel feature of this scintillation imaging radiation detector is its ability to detect individual nuclear particle scintillations with a h igh degree of spatial resolution. The key elements of this detector system are a high gain, low noise image intensifier tube, a CCD camera and commercially available image processing hardware and software. This detector system is highly effective for applications such as low fluence and real time neutron radiography, mapping of radioactive contamination in nuclear reactor fuel rods, X-ray diffraction imaging, high speed autoradiography and in general position sensitive detection of nuclear radiation. Results of some of the exploratory experiments carried out using this detector system are presented in this paper. (orig.).

1996-01-01

255

Calibration of solid state nuclear track detector CR-39 for radon measurements

TAPP-3 and 4 reactors use large number of Self Powered Neutron Detectors (SPNDs) for Neutronic lower measurement and control. To perform in-situ calibration of these detectors in select locations and to validate the reactor physics codes which predict flux at various points in the core, traveling in-core probes (TIP) are required. The TIP assembly consists of a miniature neutron sensitive detector. The detector is driven in and out of core using a mechanism which facilitates positioning of the detector anywhere inside a vertical tube (Central carrier tube of any of the six select Vertical Flux Units) in the core. TIP is driven through retractable feed mechanism for a stroke of 13 m. This paper describes the developmental efforts and the operational feedback of the retractable feed mechanism for the stroke of 13 m used at TAPP 3 and 4 reactor. (author)

2006-11-13

256

Calibration of solid state nuclear track detector CR-39 for radon measurements

Solid state nuclear track detectors (SSNTD) are widely used for radon measurements and CR-39 is one of the most popular SSNTD. In this work it was determined the calibration factor for radon concentration measurements through the passive method with CR-39 detectors. The detectors were put in a proper device (an adapted Lucas cell) and exposed to the standard radon concentration through the Pylon Model RN-150 flow through radon gas source. After exposure, the detectors were etched for 5.5 hours in a KOH solution at 80 deg C in a bath at a constant temperature. The track density was read in an Axiolab-Zeiss optical microscope, with nominal magnification of X10 connected to a video camera and to a personal computer. The calibration factor was obtained through the relation between standard radon concentration, track density and exposure time. (author)

2007-07-01

257

A new method of imaging particle tracks in solid state nuclear track detectors

Solid state nuclear track detectors (SSNTD) are widely used for radon measurements and CR-39 is one of the most popular SSNTD. In this work it was determined the calibration factor for radon concentration measurements through the passive method with CR-39 detectors. The detectors were put in a proper device (an adapted Lucas cell) and exposed to the standard radon concentration through the Pylon Model RN-150 flow through radon gas source. After exposure, the detectors were etched for 5.5 hours in a KOH solution at 80 deg C in a bath at a constant temperature. The track density was read in an Axiolab-Zeiss optical microscope, with nominal magnification of X10 connected to a video camera and to a personal computer. The calibration factor was obtained through the relation between standard radon concentration, track density and exposure time. (author)

258

British Library Electronic Table of Contents (United Kingdom)

Summary Solid state nuclear track detectors are used to determine the concentration of a particles in the environment. The standard method for assessing exposed detectors involves 2D image analysis. However 3D imaging has the potential to provide additional information relating to angle as well as to differentiate clustered hit sequences and possibly energy of a particles but this could be time consuming. Here we describe a new method for rapid high-resolution 3D imaging of solid state nuclear track detectors. A `LEXT' OLS3100 confocal laser scanning microscope (Olympus Corporation, Tokyo, Japan) was used in confocal mode to successfully obtain 3D image data on four CR-39 plastic detectors. Three-dimensional visualization and image analysis enabled characterization of track features. This ...

2010-01-01

259

A method to study heavy ion reactions using position sensitive and Bragg curve spectroscopy detectors

A method to study heavy ion reactions using position sensitive and Bragg curve spectroscopy detectors

A large area Bragg curve spectroscopy (BCS) detector and a position sensitive parallel grid avalanche counter have been developed to study heavy ion reactions, such as inelastic excitations and few nucleon transfer reactions near the Coulomb barrier. Reasonably good resolutions have been achieved for energy, atomic number and angle. A theoretical investigation on the mass dependence of the Bragg peak signal from the BCS detector, shows that there is a negligible mass dependence related to the geometry of the detector. The mass number of the heavy ions which cannot be obtained by the above method, has been identified by detecting the corresponding characteristic gamma rays from the product nuclei with two large solid angle gamma ray detectors. (orig.)

1993-10-15

260

A large solid angle, high stopping power Bragg curve spectrometer for coincidence measurements

A large area Bragg curve spectroscopy (BCS) detector and a position sensitive parallel grid avalanche counter have been developed to study heavy ion reactions, such as inelastic excitations and few nucleon transfer reactions near the Coulomb barrier. Reasonably good resolutions have been achieved for energy, atomic number and angle. A theoretical investigation on the mass dependence of the Bragg peak signal from the BCS detector, shows that there is a negligible mass dependence related to the geometry of the detector. The mass number of the heavy ions which cannot be obtained by the above method, has been identified by detecting the corresponding characteristic gamma rays from the product nuclei with two large solid angle gamma ray detectors. (orig.).

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

261

A large solid angle, high stopping power Bragg curve spectrometer for coincidence measurements

A large acceptance, high stopping power, Bragg curve spectrometer has been developed for use in coincidence experiments with heavy ions. The electron collection fields are radial and position information is obtained from a resistive anode. The detector is 60 cm deep and operates at pressures of up to 2.5 atm of P-10 gas. It is mated to a scattering chamber which allows it to be moved out of plane during coincidence measurements. The detector design was aided by the results of computer simulations of the electron collection process in the detector, and of the signal processing in the electronics. The signals from the Bragg curve spectrometer are recorded in a waveform digitizer and the Bragg peak height, range, position and pileup rejection information are determined from software analysis of the recorded signals. Factors limiting the performance of the detector are discussed, and results obtained with ...

1991-09-01

262

A Detector for 2-D Neutron Imaging for the Spallation Neutron Source

A large acceptance, high stopping power, Bragg curve spectrometer has been developed for use in coincidence experiments with heavy ions. The electron collection fields are radial and position information is obtained from a resistive anode. The detector is 60 cm deep and operates at pressures of up to 2.5 atm of P-10 gas. It is mated to a scattering chamber which allows it to be moved out of plane during coincidence measurements. The detector design was aided by the results of computer simulations of the electron collection process in the detector, and of the signal processing in the electronics. The signals from the Bragg curve spectrometer are recorded in a waveform digitizer and the Bragg peak height, range, position and pileup rejection information are determined from software analysis of the recorded signals. Factors limiting the performance of the detector are discussed, and results obtained with ...

263

Neutron detector counting capabilities for /sup 10/B-lined and /sup 235/U fission chambers in high gamma-ray fluxes

Abstract - We have designed, built, and tested a 2-D pixellated thermal neutron detector. The detector is modeled after the MicroMegas-type structure previously published for collider-type experiments. The detector consists of a 4X4 square array of 1 cm 2 pixels each of which is connected to an individual preamplifier-shaper-data acquisition system. The neutron converter is a 10B film on an aluminum substrate. We describe the construction of the detector and the test results utilizing 252Cf sources in Lucite to thermalize the neutrons.Drift electrode (Aluminum) Converter (10B) 3 mm Conversion gap neutron (-900 V)

2006-07-01

264

Large area, low capacitance Si(Li) detectors for high rate x-ray applications

This report compares the performance characteristics of /sup 10/B-lined and fission-neutron detectors in gamma-ray fluxes typical of the fields to be encountered during nondestructive testing of irradiated light-water fuel assemblies stored in water. Using the optimum time constants for each of the /sup 10/B-lined detectors, the 0.25-in.-dia detector had a 5% loss in neutron count sensitivity at 7000 rad/h. Similarly, the 0.5-in.-dia detector had a 7% loss at 13,000 rad/h and the 1-in.-dia detector had a 5% loss in sensitivity at 1000 rad/h. Uranium-235 fission chambers were operated successfully in fields above 100,000 rad/h with no loss in neutron counting sensitivity. Shielding calculations were done to determine the appropriate shield thickness needed for a /sup 10/B-lined neutron detector to operate in a 50,000 rad/h field, typical of light-water-reactor ...

1985-03-01

265

Experimental Evaluation And Simulation Of Multi-pixel Cadmium-zinc-telluride Hard-x-ray Detectors

Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over ...

1992-10-01

266

Theoretical transition energies, lifetimes and fluorescence yields of multiply ionized silicon

This dissertation describes the evaluation of many-pixel Cadmium-Zinc-Telluride (CdZnTe) hard-X-ray detectors for future use with the High Energy Replicated Optics (HERO) telescope being developed at Marshall Space Flight Center. The detector requirements for the HERO application are good energy resolution (sufficient to resolve cyclotron features and nuclear lines), spatial resolution of ∼200 μm, minimal charge loss of absorbed X rays, and minimal sensitivity to the background environment. This research concentrates on assessing the suitability of these detectors for the focus of HERO, and includes the development of a simulation of the physics involved in an X-ray-detector interaction, a study of the intrinsic material properties, measurements with prototype detectors such as the energy and spatial resolution, charge loss, and X-ray background reduction through ...

2004-01-01

267

The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D

Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.

1982-01-01

268

Study of transient enhanced dopant diffusion in silicon and proposed limiting methods

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

1994-06-01

269

Soft X-ray spectra of amorphous hydrogenated silicon

The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

2001-09-01

270

Silicone-rubber washers soothe vibrating transmission lines

The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

1985-06-01

271

Silicon nanopowder as active material for hybrid electrodes of lithium-ion batteries

Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.

1965-01-01

272

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

2011-01-01

273

On the theory of transient enhanced diffusion in boron-implanted silicon

On the theory of transient enhanced diffusion in boron-implanted silicon

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

1991-01-01

274

Hardening process relating to the irradiation of active electronic components and large hardened components

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

275

Determination of the conversion factor for infrared measurements of carbon in silicon

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

1988-12-09

276

Boron uphill diffusion during ultrashallow junction formation

The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.

1986-10-01

277

Anomalous sputter yields due to cascade mixing

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

2003-05-26

278

Anomalous sputter yields due to cascade mixing

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

1980-05-01

279

17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

280

Semiconducting properties of passive films formed on stainless steels: Influence of the alloying elements

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

2007-08-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

281

Materials aspects of multijunction solar cells

Passive films formed on stainless steels in a borate buffer solution (pH 9.2) have been investigated by capacitance measurements and photoelectrochemistry. The study was carried out on films formed on AISI type 304 and 316 stainless steels and high purity alloys with differing chromium, nickel, and molybdenum contents. Complementary research by Auger analysis shows that the passive films are composed essentially of an inner chromium region in contact with the metallic substrate and an outer iron oxide region developed at the film/electrolyte interface. The semiconducting properties of the passive films are determined by those of the constituent chromium and iron oxides which are of p-type and n-type, respectively. Thus the influence of the alloying elements on the semiconducting properties of the passive films is explained by changes in the electronic structure of each of these two oxide regions.

1998-11-01

282

Improved Output Power of GaN-Based Vertical Light Emitting Diodes Fabricated with Current Blocking Region Formed by O2 Plasma Treatment

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

1991-05-01

283

Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis

We report on the formation of current blocking regions by O2 plasma treatment to reduce current crowding at the active region above the p-type electrodes of GaN-based vertical light emitting diodes (LEDs). The forward voltage and reverse current (at -5 V) of the plasma-treated LEDs slightly increase with increasing aging time. The output power (at 350 mA) of the plasma-treated LEDs is enhanced by 26% as compared to that of reference LEDs and is comparable to that of LEDs with SiO2 current blocking layers. It is shown that the output power (at 700 mA) of the plasma-treated LEDs is degraded by less than 2% of the initial value after 500 h.

2011-07-01

284

Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

2006-06-29

285

Chemical composition and electronic structure of passive films formed on Alloy 600 in acidic solution

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

2006-06-29

286

Chemical composition and electronic structure of passive films formed on Alloy 600 in acidic solution

The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

2008-03-15

287

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

2008-03-01

288

Radiation-induced segregation in light-ion bombarded Ni-8% Si

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...

2004-06-01

289

Investigation of #alpha#-sialon formation by high temperature X-ray diffraction

Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...

1986-01-01

290

Enhanced biosorptive removal of cadmium from aqueous solutions by silicon dioxide nano-powder, heat inactivated and immobilized Aspergillus ustus

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...

1993-10-04

291

British Library Electronic Table of Contents (United Kingdom)

Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...

2011-01-01

292

A plasma process for the synthesis of cubic-shaped silicon nanocrystals for nanoelectronic devices

Uncertainties of retrospective radon concentration measurements by multilayer surface trap detector

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...

2007-04-21

293

Pulse Rise Time Characterization of a High Pressure Xenon Gamma Detector for use in Resolution Enhancement

The detector for retrospective radon exposure measurements is developed. The detector consists of the multilayer package of solid-state nuclear track detectors LR-115 type. Nitrocellulose films works both as {alpha}-particle detector and as absorber decreasing the energy of {alpha}-particles. The uncertainties of implanted {sup 210}Pb measurements by two- and three-layer detectors are assessed in dependence on surface {sup 210}Po activity and gross background activity of the glass. The generalized compartment behavior model of radon decay products in the room atmosphere was developed and verified. It is shown that the most influencing parameters on the value of conversion coefficient from {sup 210}Po surface activity to average radon concentration are aerosol particles concentration, deposition velocity of unattached {sup 218}Po and air exchange rate. It is demonstrated that with ...

2006-07-01

294

Physics of the {sup 252}Cf-source-driven noise analysis measurement

High pressure xenon ionization chamber detectors are possible alternatives to traditional thallium doped sodium iodide (NaI(Tl)) and hyperpure germanium as gamma spectrometers in certain applications. Xenon detectors incorporating a Frisch grid exhibit energy resolutions comparable to cadmium/zinc/telluride (CZT) (e.g. 2% (at) 662keV) but with far greater sensitive volumes. The Frisch grid reduces the position dependence of the anode pulse risetimes, but it also increases the detector vibration sensitivity, anode capacitance, voltage requirements and mechanical complexity. We have been investigating the possibility of eliminating the grid electrode in high-pressure xenon detectors and preserving the high energy resolution using electronic risetime compensation methods. A two-electrode cylindrical high pressure xenon gamma detector coupled to time-to-amplitude conversion electronics ...

2000-01-01

295

Electronics for the Si detectors in APEX

The {sup 252}Cf-source-driven noise analysis method is a versatile measurements tool that has been applied to measurements for initial loading of reactors, quality assurance of reactor fuel elements, fuel processing facilities, fuel reprocessing facilities, fuel storage facilities, zero-power testing of reactors, verification of calculational methods, process monitoring, characterization of storage vaults, and nuclear weapons identification. This method`s broad range of application is due to the wide variety of time- and frequency domain signatures, each with unique properties, obtained from the measurement. The following parameters are obtained from this measurement: average detector count rates, detector multiplicities, detector autocorrelations, cross-correlation between detectors, detector autopower spectral densities, cross-power spectral densities between ...

1997-02-01

296

Development of Micromegas-like gaseous detectors using a pixel readout chip as collecting anode

APEX (ATLAS Positron EXperiment), a collaborative effort of ANL, FSU, MSU/NSCL, Princeton, Queen`s, Rochester, Washington and Yale, is an experiment to study positron and electron production in very heavy ion collisions. The electrons and positrons are detected with two detector arrays, each consisting of 216 1 mm thick Si PIN diodes, and their energy and time-of-flight are measured. The number of detectors and limited space made it necessary to develop a system that could efficiently process and transfer signals from the detectors to the charge sensing ADC`s and data readout electronics as well as monitor the condition of the detectors. The discussion will cover the electronics designed for the Si detectors, including the charge amplifier, ``Mother board`` for the charge amplifiers, 8 channel Shaper, 16 channel Constant Fraction Discriminator (CFD), 16 channel Peak-to-FERA (PTF) ...

1994-07-01

297

The hunt for ?13 at the Daya Bay nuclear power plant

This thesis reports on the fabrication and test of a new gaseous detector with a very large number of readout channels. This detector is intended for measuring the tracks of charged particles with an unprecedented sensitivity to single electrons of almost 100 %. It combines a metal grid for signal amplification called the Micromegas with a pixel readout chip as signal collecting anode and is dubbed GridPix. GridPix is a potential candidate for a sub-detector at a future electron linear collider (ILC) foreseen to work in parallel with the LHC around 2020--2030. The tracking capability of GridPix is best exploited if the Micromegas is integrated on the pixel chip. This integrated grid is called InGrid and is precisely fabricated by wafer post-processing. The various steps of the fabrication process and the measurements of its gain, energy resolution and ion back-flow property are reported in this document. Studies of the ...

298

The cross-coupled interferometer for gravitational wave detection

The Daya Bay reactor neutrino experiment is located at the Daya Bay nuclear power plant in Shenzhen, China. The experiment deploys eight 'identical' antineutrino detectors to measure antineutrino fluxes from six 2.9 GWth reactor cores in three underground experimental halls at different distances. The target zone of the Daya Bay detector is filled with 20 t 0.1% Gd doped LAB liquid scintillator. The baseline uncorrelated detector uncertainty is ?0.38% using current experimental techniques. Daya Bay can reach a sensitivity of sin22?13<0.01 with baseline uncertainties after 3 years of data taking.

2010-03-30

299

Tests with superconducting re-entrant cavities for transducer applications in gravitational wave detectors

The cross-coupled interferometer is a new design for interferometric gravitational wave detectors. Similar to the baseline gravitational wave detectors proposed for Advanced LIGO, it uses long-arm cavities in which the signal is generated. The signal fields are then extracted from the arm cavities with an additional cavity behind the long-arm cavities. The tuning of this signal extraction cavity and the parallel tuning of the signal recycling mirror can be used to optimize the peak frequency and the bandwidth of the detector independently. If we replace the signal recycling mirror by a small cavity, it is possible to amplify signals in two different frequency bands.

2002-04-07

300

Sudbury neutrino detector

We studied the niobium re-entrant cavity utilized by the Australian group in the Niobe gravitational wave detector. Instead of using their non-contact re-entrant cavity, we plan to change it to a closed one to be used in the parametric transducers of the Brazilian Mario Schenberg detector. The performance of the transducer depends on some cavity parameters such as the electrical Q and the electrical coupling. We measured the resonant frequency and the loaded electrical Q as a function of the probe position in a closed niobium #approx#15 GHz cavity operating at 4.2 K.

2004-03-07

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

301

Studies of a Poenitz-type black neutron detector as a neutron flux monitor

The proposed Sudbury Neutrino Observatory is based on a Cherenkov detector which has a total of 1000 tonne of heavy water and 1800 tonne of light water for its sensitive volume. The detector is optimized for the measurement of extra-terrestrial low energy electron neutrinos and electron antineutrinos spectra as well as the total neutrino flux independent of neutrino flavours. It will delineate the Standard Solar Model and neutrino propagation aspects of the solar neutrino problem, provide detailed information on the dynamics of stellar collapse and measure neutrino masses and oscillation parameters with high sensitivity.

302

Nuclear borehole logging using lithium detector assemblies

A black neutron detector of novel design has been constructed and tested as a neutron flux monitor. The neutron time-of-flight (TOF) technique was used to measure the zero degree neutron spectrum from a subnanosecond pulsed proton beam on a thick metallic lithium target. We describe the detector, discuss the shielding arrangement and electronics, determine the low-energy cut-off. We calculate the efficiency, show spectra and compare measured zero degree differential cross-section of the {sup 7}Li(p, n{sub 0}){sup 7}Be reaction with recommended published cross-sections. (orig.).

1997-04-01

303

Applications of the Long-Range Alpha Detector (LRAD) technology to low-level radioactive waste management

A method and apparatus for nuclear borehole logging, and in particular, neutron porosity logging, uses a neutron source, and a pair of spaced lithium detectors, preferably Li"6I crystal or Li"6 doped glass, to detect neutrons emitted from a borehole formation being logged. The spectrum developed by the lithium detectors is processed to remove the gamma ray background radiation and the hydrogen absorption peak, thus allowing a more accurate neutron count. A Gaussian curve is fitted to the neutron peak of the spectrum, the curve eliminating the hydrogen absorption peak. The area under this Gaussian curve represents the neutron count. (author).

1991-11-01

304

A high stopping power, large acceptance Bragg curve spectrometer for heavy ion detection

Long-Range Alpha Detector (LRAD) systems are designed to monitor alpha contamination by measuring the number of ions in the air. Alpha particles are a form of ionizing radiation and a typical 5-MeV alpha particle will create about 150,000 ion pairs in air. Field tests at various DOE sites have shown that LRAD Surface Soil Monitors (SSM), Sample Monitors, and Object Monitors are faster and more sensitive than traditional alpha detectors for measuring alpha contamination. This paper discusses the various applications of LRAD technology to low-level radioactive waste management.

1993-12-01

305

A high stopping power, large acceptance Bragg curve spectrometer for heavy ion detection

A large acceptance, high stopping power Bragg curve spectrometer has been developed for use in coincidence experiments with heavy ions. The electron collection fields are radial and position information is obtained from a resistive anode. The detector is 60 cm deep and operates at pressures of up to 2.5 atm of P-10 gas. It is mated to a scattering chamber which allows it to be moved out of plane during coincidence measurements. Factors affecting the performance of the detector are discussed, and results obtained with the detector are presented. (orig.).

1991-05-01

306

A PDA-Based ECG Beat Detector for Home Cardiac Care.

A large acceptance, high stopping power Bragg curve spectrometer has been developed for use in coincidence experiments with heavy ions. The electron collection fields are radial and position information is obtained from a resistive anode. The detector is 60 cm deep and operates at pressures of up to 2.5 atm of P-10 gas. It is mated to a scattering chamber which allows it to be moved out of plane during coincidence measurements. Factors affecting the performance of the detector are discussed, and results obtained with the detector are presented. (orig.).

307

View Record - NASA Jet Propulsion Laboratory

Recent rapid growth in mobile computing technologies enables telemedicine applications to operate on mobile devices. Our focus is on the design of an integrated electrocardiogram (ECG) beat detector on a Personal Digital Assistant (PDA) platform for the health screening process. The ECG beat detector module will be supported by the PDA version of Personal Health Information Management System (PHIMS) and Facilitated Accurate Referral Management System (FARMS) through wireless network infrastructure as a home-based mobile cardiac monitoring solution. PMID:17282192

2005-01-01

308

The mass dependence of the signal peak height of a Bragg-curve ionization chamber

Jan 13, 2011 ... This 360-degree mosaic of images from the navigation camera on ... The Radiation Assessment Detector, shown prior to its September 2010 ...

309

The Brazilian Bragg curve detector built for AMS studies

The Bragg-curve detector of the parallel plate ionization chamber type generates a signal that is a distorted replica of the original Bragg-curve. In result of this distortion, the signal peak height is not only a function of the atomic number of the heavy ion, as it is often stated, but also of the particle mass. This mass effect was studied with the aid of computer simulation, and it was found to be dependent on the Frisch grid to anode gap width and on the detector gas. The charge resolution of the detector is affected very significantly by this mass dependence of the signal peak height. Therefore, a careful selection of the detector gas and the grid to anode gap width is necessary, if good charge resolution over a wide range of heavy ions is required. (orig.).

310

Space Images - NASA Jet Propulsion Laboratory

A Bragg curve detector (BCD) has been designed and built to be used for AMS purposes. Its design is described and its performance, obtained in tests at the Australian National University (ANU), is reported. At a {sup 36}Cl energy of 154 MeV, the energy resolution was found to be 0.38%, and the charge resolution 1.3%. The {sup 36}Cl and {sup 36}S are completely discriminated. Good separation was also achieved at 64 MeV, and a measurement at this energy of the {sup 36}Cl/Cl ratio of a sample measured previously at 154 MeV with the standard ANU ionization detector agreed well with the earlier value. This very simple detector has been shown to be suitable for use in AMS programs.

2000-10-01

311

Screening Samples with a Position-Sensitive Detection System Providing Isotope-Specific Information

Jan 18, 2011 ... The Radiation Assessment Detector, shown prior to its September 2010 ... This 360-degree panorama shows the vista from the location where ...

312

Radon concentration measurements by means of nuclear tracks detector with image analysis

The properties of individual radioactive particles present in a sample, such as a swipe, are more interesting than bulk properties of the sample. The present work focuses on instrumentation that provides position-sensitive spectral information non-destructively from the sample. The experimental part of the work was realized using a device called PANDA (Particles And Non-Destructive Analysis). The detector setup used in the study contains a broad-energy HPGe gamma-ray detector and a position-sensitive alpha detector. Both detectors are connected to a time-stamping event-mode data acquisition system. The method is shown to locate particles with sub-millimetre accuracy and distinguish the interesting particles from non-interesting ones. (author)

2010-11-01

313

Photoconductive ultraviolet detectors based on ZnO films

English 1998 p. 124 Poland Antanasijevic, R. Vukovic, J. Novakovic, V. Tasic,

1998-09-15

314

British Library Electronic Table of Contents (United Kingdom)

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8mA, and a slow photoresponse with a rise time of 5min and a decay time of 7min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the d...

2006-01-01

315

Particle identification for heavy ions in a time-of-flight spectrometer

PERFORMANCE-LIMITING DEFECTS IN CDZNTE DETECTORS.

A time-of-flight (TOF) spectrometer has been constructed at the JAERI 20 MV tandem accelerator facility. A position-sensitive start detector, which consists of a thin carbon foil, microchannel plates and a resistive plate, was developed for the TOF measurements through the spectrometer. The time and position resolutions obtained were 120 ps and 0.3 mm for ..cap alpha.. particles from /sup 241/Am, respectively. A two-dimensional position-sensitive detector was also developed to measure the solid angle of the spectrometer and the maximum solid angle obtained was 9.5 msr. As a particle detector a Bragg curve ionization chamber was developed. From the Bragg curves of heavy ions in the detector, energies, ranges and Bragg curve peaks were measured and used for particle identification. The resolving power Z/..delta..Z of the atomic number was about 50.

1982-05-01

316

Optimal detector deployment for the CANDU-600 pressurized heavy water reactor

We studied the effects of small, <20 {micro}m, Te inclusions on the energy resolution of CdZnTe gamma-ray detectors using a highly collimated X-ray beam and gamma-rays, and modeled them via a simplified geometrical approach. Previous reports demonstrated that Te inclusions of about a few microns in diameter degraded the charge-transport properties and uniformity of CdZnTe detectors. The goal of this work was to understand the extent to which randomly distributed Te-rich inclusions affect the energy resolution of CZT detectors, and to define new steps to overcome their deleterious effects. We used a phenomenological model, which depends on several adjustable parameters, to reproduce the experimentally measured effects of inclusions on energy resolution. We also were able to hound the materials-related problem and predict the enhancement in performance expected by reducing the size and number of Te inclusions within ...

2006-10-29

317

Mass dependence of the signal peak height of a Bragg-curve ionization chamber

An optimal deployment pattern of flux mapping detectors for a Canada uranium-deuterium (CANDU)-600 pressurized heavy water reactor (PHWR) is determined by obtaining an optimal feedback relationship between flux measurements and zone controllers. The reactor core is modeled with a time-dependent two-group, two-dimensional diffusion equation, and flux perturbation are expressed by model expansions. The modal expansion coefficients are used as elements of the state vector representing the system dynamics. An optimal feedback matrix connecting the flux measurement vector to the control vector is derived by minimizing a quadratic performance index involving both the state and control vectors. We obtain the detector effectiveness in terms of the optimal feedback matrix and determine optimal detector locations for the Wolsung Unit 1 reactor in Korea. We have tested the methodology through evaluation of flux maps generated through ...

1992-01-01

318

Linewidth-broadened Fabry-Perot cavities within future gravitational wave detectors

The Bragg-curve detector of the parallel plate ionization chamber type generates a signal that is a distorted replica of the original Bragg-curve. In result of this distortion, the signal peak height is not only a function of the atomic number of the heavy ion, as it is often stated, but also of the particle mass. This mass effect was studied with the aid of computer simulation, and it was found to be dependent on the Frisch grid to anode gap width and on the detector gas. The charge resolution of the detector is affected very significantly by this mass dependence of the signal peak height. Therefore, a careful selection of the detector gas and the grid to anode gap width is necessary, if good charge resolution over a wide range of heavy ions is required.

1985-01-01

319

LAMBDA - IRAS Faint Source Survey Plates - LAMBDA - NASA

The bandwidth of LIGO-like terrestrial interferometric gravitational wave detectors is set by the pole of the Fabry-Perot cavities within the arms of the Michelson interferometer. This constraint arises because the gain of gravitational wave-induced signal sidebands is limited to frequencies within the linewidth of the cavities. The nature of standard Fabry-Perot cavities is such that one cannot independently adjust for increased gain without suffering a loss of bandwidth. If these quantities could be decoupled, the resulting improvement in bandwidth may lead to viable high frequency detectors. A pair of anti-parallel diffraction gratings within a Fabry-Perot cavity can increase the bandwidth of a LIGO-scale detector by a factor of #approx#1000.

2004-03-07

320

Intercomparison of Retrospective Radon Detectors

Apr 18, 2008 ... The FSS was produced by point-source filtering the individual detector data ... a 1-sigma noise map; and a coverage map giving the count of ...

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

321

Enhancement of efficacy of process water monitors in detecting heavy water leak in steam generator blow down lines

We performed both a laboratory and field intercomparison of two novel glass-based retrospective radon detectors previously used in major radon case-control studies performed in Missouri and Iowa. The new detectors estimate retrospective residential radon exposure from the accumulation of a long-lived radon decay product, Pb-210, in glass. The detectors use track registration material in direct contact with glass surfaces to measure the alpha emission of a Pb-210 decay product, Po-210. The detector's track density generation rate (tracks cm{sup -2} hr{sup -1}) is proportional to the surface alpha activity. In the absence of other strong sources of alpha emission in the glass, the implanted surface alpha activity should be proportional to the accumulated Po-210 and hence, the cumulative radon gas exposure. The goals of the intercomparison were to: (1) perform collocated measurements using two ...

1998-11-01

322

Development of a new #gamma#-ray detector for PEM applications

The Steam Generator (SG) serves as an interface between primary and secondary cycle in Pressurized Heavy Water Reactor (PHWR). Failure of steam generator tubes result in leaking of active heavy water in the secondary closed loop. In Tarapur Atomic Power Station-3 and 4 (TAPS- 3 and 4), Scintillator detectors are provided to detect on line heavy water leakages in SG and moderator heat exchangers by monitoring Nitrogen-16 (16N) and Oxygen-19 (19O) activities. Efficacy of detection of these activities at designed detector position on SG blow down line in presence of background radiation field is analysed theoretically. The count rate of 19O and 16N estimated at the detector position inside Reactor Building (RB) shows that detectors only respond to very high leak rates due to presence of high ambient radiation level even though sensitivity is appreciably good. For detector position in ...

2006-11-13

323

Determination of Proper Peaking Time for Ultra Lege detector at Medium Energies

The authors are developing a high specificity detector for detecting the increased metabolic rate of breast tumors. Positron emission mammography (PEM) provides a highly efficient, high spatial resolution positron imaging system. PMT plays a very important role in PEM detectors, because most of the systems consist of scintillator arrays coupled with PMT. Our detector is composed of 20 x 20 arrays of 2 mm x 2 mm x 20 mm of Bi_4Ge_3O_1_2 (BGO) scintillators and a novel flat panel position-sensitive PMT (FP-PS-PMT)-Hamamatsu R8400-00-M256. Spatial resolutions of 2.0 mm FWHW and energy resolutions of 23% FWHM are achieved. (authors)

2007-05-01

324

DESIGN, IMPLEMENTATION AND TESTING OF ... - LAMBDA - NASA

Reducing count losses and pile-up pulse effects in quantitative and qualitative analysis is necessary for accuracy of analysis. Therefore, the optimum peaking time for particular detector systems is important. For this purpose, pure Se and Zn elements were excited by 59.5 keV ?-rays from a 50 mCi 241Am annular radioactive source in this study. The characteristic x-rays emitted from pure Se and Zn elements were detected by using an ultra low energy Ge (Ultra-LEGe) detector connecting Tennelec TC 244 spectroscopy amplifier at different peaking time modes. Overall pulse widths were determined by HM 203-7 oscilloscope connecting amplifier. The proper peaking time for ultra low energy germanium detector (Ultra-LEGe) is determined about 4 ?s.

2008-08-25

325

Conceptual Design of a Support Structure and an Assemble of Detectors Inside a Large Solenoid

FIG. 4. Power Spectral Density of the MAP W11 radiometer. The red and black traces are the power spectral density measurements of the two detectors on the ...

326

Change of the DKPS-100 semiconductor detector properties under 3.2 MeV alpha particle irradiation

In this note we describe a support structure which will hold detector systems (ITS, TPC, TOF) inside the large solenoid. An overall view of ALICE detector is shown on Fig.1. The support structure consists of 2 rings which fixed to an iron yoke and spokes which connect TPC and TOF to these rings. The ITS is connected by spokes to TPC end caps. Between coils there are 7cm spacings which will allow to fix rings to the yoke this support structure will allow to assemble ITS, TPC and TOF together (Fig.2) somewhere on the surface and then transport to the pit and install in the magnet. Two rings (1) are connected with four bars (2). On the bottom bars there are rolls (3) which will allow smoothly insert detectors into the magnet. Spokes (4) are uniformly distributed.

1993-01-01

327

Annihilation of antiprotons in light nuclei

Russian 1977. p. 582. USSR Antropov, AE Fedoseeva, OP Milovanov,

328

AeroSpace Information for a Changing World - NASA Technical ...

CR-39 detectors have been exposed to a 5.9-MeV antiproton beam using the low energy antiproton ring (LEAR) facility at CERN. At this energy, tracks of antiprotons appear in a CR-39 detector after 135 min of etching in 6 M NaOH at 70C. Fluence of the antiproton beam has been determined using track density. We have also found tracks in the etched CR-39 detector at different depths (250-500 mum). These tracks have resulted from the annihilation of antiprotons with the constituents (H, C and O) of the CR-39 detector. The goal of the experiment is to develop a simple and low-cost method to study properties of antiparticles and those formed after annihilation of these particles with the target matter.

2006-01-01

329

A real-time neutron dosimeter for high energy neutrons with an Si surface barrier detector

Mar 1, 2011 ... Currently there is no compact, portable and real time neutron detector instrumentation available for use inside spacecraft or on planetary ...

330

A Quantum-Enhanced Prototype Gravitational-Wave Detector

1982. p. 173-175. Israel Eisen, Y. Engler, G. Ovadia, E. Shamai, Y. Israel

1982-12-14

331

8 - NASA Technical Report Server (NTRS)

The quantum nature of the electromagnetic field imposes a fundamental limit on the sensitivity of optical precision measurements such as spectroscopy, microscopy, and interferometry. The so-called quantum limit is set by the zero-point fluctuations of the electromagnetic field, which constrain the precision with which optical signals can be measured. In the world of precision measurement, laser-interferometric gravitational wave (GW) detectors are the most sensitive position meters ever operated, capable of measuring distance changes on the order of 10^-18 m RMS over kilometer separations caused by GWs from astronomical sources. The sensitivity of currently operational and future GW detectors is limited by quantum optical noise. Here we demonstrate a 44% improvement in displacement sensitivity of a prototype GW detector with suspended quasi-free mirrors at frequencies where the sensitivity is shot-noise-limited, by ...

2008-01-01

332

The rate-limiting mechanism of transition metal gettering in multicrystalline silicon

feature similar to the face detection in Intel's OpenCV library, implement it in Matlab code, and test the performance of the new ROI detector against the ...

333

Silicon purification melting for photovoltaic applications

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...

1997-04-01

334

Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (XVIII), December 1, 1979-February 29, 1980

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

2000-04-01

335

Effects of powder particle size on thermoelectric properties of n- and P-Bi2Te3; N- oyobi P-Bi2Te3 no netsuden tokusei eno funmatsu ryudo no eikyo

Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...

1980-03-01

336

A kinetic and mechanistic study of the oxidation of silicon- and thin metal silicide layers

The effect of powder particle sizes of n- and p-Bi2Te3 on the thermoelectric properties has been studied. The powder was formed from the each ingot and sieve into <63, 63-90 and 90-150{mu}m for p-type, and <355 and >355 {mu}m for n-type. Those powders are pressed followed by CIP, then sinterd at 773K for S. Effects of CIP on the densities were not so large such as 1-4% depending on the powder sizes. The Setback coefficients and electric conductivities for p-type were 110{mu}V/K and 0.8{times}10{sup 2}ohm{sup -1}m{sup -1} at 333K, while 18O{mu}V/K and 2.0{times}10{sup 4}ohm{sup -1}m{sup -l} for n-type, respectively. The thermal conductivity for n-type was 0.7W/mK leading to the figure of merit of 2.1{times}10{sup -3}(/K). The hybrid texture of the suitable amount of smaller and larger grains has a possibility of an improvement for thermoelectric properties. 10 refs., 5 figs., 5 tabs.

1995-07-15

337

Water-repellency and antibacterial activities of plasma-treated cleavable silicone surfactants on nylon fabrics

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...

338

British Library Electronic Table of Contents (United Kingdom)

In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...

2006-01-01

339

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

1985-08-01

340

The fraction of substitutional boron in silicon during ion implantation and thermal annealing

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

341

The fraction of substitutional boron in silicon during ion implantation and thermal annealing

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

1998-05-01

342

The formation of aluminum phosphide in aluminum melt treated with an Al-Fe-P inoculant addition

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

1998-05-01

343

Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum

The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)

2001-04-01

344

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

2011-01-01

345

Solar thermophotovoltaic (STPV) system with thermal energy storage

Schottky barrier modulation on silicon nanowires

A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}

1996-02-01

346

SSRM characterisation of FIB induced damage in silicon

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

2007-03-26

347

Response characteristics of base-isolated structure with silicone rubber bearings

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.

2008-03-01

348

Properties of low residual stress silicon oxynitrides used as a sacrificial layer

More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992

1993-08-15

349

Prediction of transient-enhanced diffusion during rapid thermal annealing of ion-implanted silicon

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

2000-01-04

350

Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

1985-03-01

351

Photoluminescence in large fluence radiation irradiated space silicon solar cells

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

1999-01-01

352

Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

1997-03-01

353

Nano silicon for lithium-ion batteries

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

2011-07-07

354

Metallization of large silicon wafers. Quarterly technical report No. 1, August 26--December 31, 1977. [45 references

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)

2006-11-12

355

Macro-Cellular Silicon carbide Reactors for Nonstationary Combustion Under Piston Engine-Like Conditions

A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).

1977-01-01

356

British Library Electronic Table of Contents (United Kingdom)

Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.

2011-01-01

357

Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films

Influence of silicon, copper and cobalt on corrosion cracking and pitting corrosion in 03Kh18N30 steel

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

1998-09-01

358

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.

359

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

360

Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

361

Study on reactivity measurement by the Feynman-#alpha# method

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

362

Si(111)/Gd: A fast and high-resolution thermal neutron detector

The Feynman-#alpha# method was applied to measurement of reactivity and the ability of this method for a real-time reactivity monitoring system was assessed. In the experiment, all measured data by BF_3 detectors were stored in a multi-channel scaler controlled by a personal computer, and they were analyzed to obtain prompt neutron decay constant (#alpha#) and reactivity with consideration of dead time of detector. It was found that #alpha# could be obtained almost in a real-time even for both positive and negative reactivities by the present experimental technique. (author).

1996-09-01

363

Self-filling and self-purging apparatus for detecting spontaneous radiation from substances in fluids

Recent developments in design and production of thermal neutron detectors based on a crystalline Si diode coupled to a Gd converter are reviewed. The most significant results of neutron test measurements carried out on prototype systems and pointing out the performances of the device are reported. Progress through various detection schemes and technological solutions for the production of a real time neutron counter for routine operation are outlined.

1998-07-01

364

Research in experimental elementary particle physics. A proposal to the U.S. Department of Energy

Disclosed herein is a radiation detector providing for the in situ automatic sampling of fluids containing substances emitting radiation, especially Cerenkov radiation. The detector permits sampling within well casings and is self-purging such that no additional provisions must be established for the storage and disposal of contaminated fluids.

1993-01-01

365

Radon concentration measurements in the soil

We report on the activities of the High Energy Physics Group at the University of Texas at Arlington for the period 1994-95. We propose the continuation of the research program for 1996-98 with strong participation in the detector upgrade and physics analysis work for the D0 Experiment at Fermilab, prototyping and pre-production studies for the muon and calorimeter systems for the ATLAS Experiment at CERN, and detector development and simulation studies for the PP2PP Experiment at Brookhaven.

1995-04-13

366

Proposed high-resolution vertex detector using superconductive thin strips

Radon concentration measurement in the ground can be used for the prospecting for uranium and earthquake prediction. Some results of radon concentration measurement in the soil are presented here. The moisture condensation at the detector surface can affect on the detection efficiency. Due to this problem we tested a few filter papers on water permeability. The ratio of track densities on solid state nuclear track detector (SSNTD) in the open and the closed diffusion chamber is also determined. (author)

367

Performance of the transition radiation detector in D{Phi}

The possibility of fabricating a superconductive vertex detector is discussed on the basis of a preliminary experiment. The experiment has shown that an indium strip 15 mm long, 20 ..mu..m wide and 0.1 ..mu..m thick is changed from the superconductive state to the normal state when struck by a single 5.4 MeV alpha particle.

1984-06-01

368

Performance of a large Bragg-curve spectrometer

The transition radiation detector (TRD) for the D{Phi} experiment is currently in operation at Fermilab. Transition radiation production, which has been clearly observed in the collider data, makes the TRD a valuable tool to discriminate electrons and hadrons. We describe an algorithm based on the truncated energy, and illustrate its use for top signal and background. (authors). 7 refs., 6 figs., 2 tabs.

1994-12-31

369

Performance of a large Bragg-curve spectrometer

A large Bragg-curve spectrometer has been constructed and tested. The detector has a cylindrical geometry and operates with a homogeneous electric field. Energy resolutions of <0.8% and Z resolutions of Z/..delta..Z=80 have been achieved for eleastically scattered /sup 58/Ni ions. These results demonstrate the suitability of this large solid-angle detector for use in a wide variety of heavy-ion scattering experiments.

1987-04-01

370

Near-Core and In-Core Neutron Radiation Monitors for Real Time Neutron Flux Monitoring and Reactor Power Level Measurements

A large Bragg-curve spectrometer has been constructed and tested. The detector has a cylindrical geometry and operates with a homogeneous electric field. Energy resolutions of <0.8% and Z resolutions of Z/#DELTA#Z=80 have been achieved for eleastically scattered "5"8Ni ions. These results demonstrate the suitability of this large solid-angle detector for use in a wide variety of heavy-ion scattering experiments. (orig.).

371

Multi-spectral schottky barrier infrared radiation detection array

MPFDs are a new class of detectors that utilize properties from existing radiation detector designs. A majority of these characteristics come from fission chamber designs. These include radiation hardness, gamma-ray background insensitivity, and large signal output.

2006-06-12

372

Multi-spectral schottky barrier infrared radiation detection array

A multi-spectral Schottky barrier infrared detector array in which individual pixels of radiation from a remote radiating object are detected by two or more Schottky barrier infrared radiation detectors each having a different spectral response so as to provide a ''color'' discrimination for the array.

1983-12-27

373

Medical explorations by radioisotopes in Lebanon

A multi-spectral Schottky barrier infrared detector array in which individual pixels of radiation from a remote radiating object are detected by two or more Schottky barrier infrared radiation detectors each having a different spectral response so as to provide a ''color'' discrimination for the array.

374

Interaction region layout of the VLEPP based photon linear collider with ultimate luminosity

This study mainly concerns medical explorations by radioisotopes. Detectors with medical exams and applications are described. Ionisation chambers, semiconductor detectors and scintillation counters are also presented. Uses of radioisotopes in medicine in vivo and in vitro techniques are explained. Examples of scintiscanning are given like: angiography, nuclear cardiography and thyroid scintiscanning. The importance of the study is to present a panorama of nuclear medicine laboratories -at the time- in hospitals in Lebanon.

375

Gamma ray detecting device using dislocation-free crystal

In the present paper, a possible interaction region layout of the VLEPP based Photon Linear Collider (PLC) with ultimate luminosity is discussed. In order to remove spent electron beams, the crab-crossing scheme is used. The detector is protected from produced pairs and secondary particles by means of the detector magnetic field and a shielding mask. ((orig.)).

1995-02-01

376

GaAs detector optimization for different medical imaging applications

This patent describes a {gamma}-ray detector. It comprises: a dislocation-free single crystal having an input surface and a transmission surface at opposite ends thereof; an active shield surrounding the crystal and functioning as an anticoincidence counter; and {gamma}-ray detector means disposed adjacent the transmission surface of the crystal for receiving and detecting {gamma}-rays of a predetermined wavelength incident on the input surface of the crystal at a specific Bragg angle and transmitted through the crystal.

1991-04-30

377

First tests of "bulk" MICROMEGAS with resistive cathode mesh

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

1999-09-11

378

Explosives detection: the problem and prospects

We present the first results from tests of a MICROMEGAS detector manufactured using the so-called "bulk" technology and having a resistive cathode mesh instead of the conventional metallic one. This detector operates as usual MICROMEGAS, but in the case of sparks, which may appear at high gas gains, the resistive mesh reduces their current and makes the sparks harmless. This approach could be complementary to the ongoing efforts of various groups to develop spark-protected MICROMEGAS with resistive anode planes.

2010-01-01

379

Direct gamma-spectrometry of surface activity with IGC-30 HPGe detector

The history of explosives vapor detection includes almost every detection strategy known to man. Initial attempts to utilize these techniques were dismal failures. However, with the development of the Electron Capture Detector (ECD), the first promising detection of explosives vapors became possible. The present commercial explosives detectors detect the higher vapor pressure materials but not the whole spectrum. This paper describes the basic properties of explosives molecules and our research to utilize these properties for increased detection sensitivity.

1984-01-01

380

Development of a real-time, neutron and gamma dosimeter

The IGC-30 HPGe detector with MCA 'CANBERRA-10 PLUS' allows to determine surface contamination of areas of any type with a minimum error in radius 8-10 m, at a 'uniform' contamination. A modification of the CANBERRA hardware and software is described allowing determination of both the activity of a possible 'radioactive spot' and the activity of the whole observed surface. (author).

1993-12-02

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

381

Development of a real-time, neutron and gamma dosimeter

In 1998, research began at Idaho National Engineering and Environmental Laboratory to investigate the application of {sup 6}Li and {sup 7}Li isotopes to the measurement of neutron and gamma radiation. Various size pairs of {sup 6}Li and {sup 7}Li based detectors were exposed to mixed neutron and gamma radiation. Experiments demonstrated that these detectors could be used to measure low level neutron radiation in the presence of high level gamma radiation. (author)

2001-07-01

382

Determination of reactor kinetic parameters in a two-core reactor

In 1998, research began at Idaho National Engineering and Environmental Laboratory to investigate the application of "6Li and "7Li isotopes to the measurement of neutron and gamma radiation. Various size pairs of "6Li and "7Li based detectors were exposed to mixed neutron and gamma radiation. Experiments demonstrated that these detectors could be used to measure low level neutron radiation in the presence of high level gamma radiation. (author)

2001-06-10

383

Detector questions for a gamma-gamma collider

The kinetic parameters, ..cap alpha.. the coupling coefficient and tau-bar the mean neutron transit time have been determined using a reactor oscillator on the coupled-core of the Queen Mary College research reactor. By using correlation techniques it has proved possible to use detectors small enough to be inserted in the fuel tanks. It is shown that the simplified Baldwin model with one-group diffusion theory is inadequate to describe the kinetic behaviour and the experimentally-determined parameters are dependent upon the positioning of the detectors.

1982-01-01

384

Detector questions for a gamma-gamma collider

The working group reviewed the main difficulties foreseen in doing physics at a gamma-gamma collider. They discussed the requirements for the detector, calculated some of the signal and background rates, compared methods of measuring luminosity, looked at how to get the laser beams in, investigated ways of sweeping aside the electrons and considered ways of disposing of the used beams. No overwhelming obstacles were found but important questions still need to be answered. ((orig.)).

1995-02-01

385

Detection device for high explosives

The working group reviewed the main difficulties foreseen in doing physics at a gamma-gamma collider. They discussed the requirements for the detector, calculated some of the signal and background rates, compared methods of measuring luminosity, looked at how to get the laser beams in, investigated ways of sweeping aside the electrons and considered ways of disposing of the used beams. No overwhelming obstacles were found but important questions still need to be answered. ((orig.)).

386

Ceramic inspection system

A portable fiber optic detector that senses the presence of specific target chemicals by electrostatically attracting the target chemical to an aromatic compound coating on an optical fiber. Attaching the target chemical to the coated fiber reduces the fluorescence so that a photon sensing detector records the reduced light level and activates an appropriate alarm or indicator.

1992-01-01

387

CPA simulator: A software tool to simulate nuclear front-end circuit response

A system for inspecting a ceramic component. The ceramic component is positioned on a first rotary table. The first rotary table rotates the ceramic component. Light is directed toward the first rotary table and the rotating ceramic component. A detector is located on a second rotary table. The second rotary table is operably connected to the first rotary table and the rotating ceramic component. The second rotary table is used to move the detector at an angle to the first rotary table and the rotating ceramic component.

2006-05-16

388

Assessment of detector sensitivity and uniformity during SPECT rotation

A computer program 'CPA simulator' has been designed to simulate the response parameters of a typical charge preamplifier (CPA) used in nuclear front-end electronics. The response parameters are studied considering three common connection methods between the detector and the CPA. The simulator predicts and illustrates the role and influence of the different components of the CPA and detector circuits.

2010-12-21

389

Applications of Bonner sphere detectors in neutron field dosimetry

The purpose of this research was to: a) evaluate variations in sensitivity and uniformity of SPECT detectors during 360"0 rotation, b) explore the causes of the variations and c) to discuss a correction procedure. A flood source consisting of a lucite disc 47.7 cm in diameter containing 3 microcuries of Co-57 was constructed. This source can be firmly attached to the uncollimated detector guaranteeing no detector-source geometry change during rotation. Four different SPECT cameras were tested. Measurements were obtained at 45"0 intervals throughout a 360"0 rotation, and repeated in 3 different orientations with respect to the earth's magnetic field. In one camera the effects of the direction and strength of induced magnetic fields were studied. All detectors showed cyclic rotational variations in sensitivity; in three cameras 6%, in one 3%. The amplitude and phase of the sensitivity variation curves and ...

1984-06-05

390

Analysis of efficacy of process water monitors in detecting heavy water leak in steam generator blow down lines

The theory of neutron moderation and spectroscopy are briefly reviewed, and moderators that are useful for Bonner sphere spectrometers are discussed. The choice of the neutron detector for a Bonner sphere spectrometer is examined. Spectral deconvolution methods are briefly reviewed, including derivative, parametric, quadrature, and Monte Carlo methods. Calibration is then discussed. (LEW)

1983-09-01

391

An imaging. gamma. -ray detector with scatter rejection for beam position control in radiotherapy

The Steam Generator (SG) serves as an interface between primary and secondary cycle in Pressurized Heavy Water Reactor (PHWR). Failure of steam generator tubes result in leaking of active heavy water in the secondary closed loop. In Tarapur Atomic Power Station-3 and 4 (TAPS- 3 and 4), Scintillator detectors are provided to detect on line heavy water leakages in SG and moderator heat exchangers by monitoring Nitrogen-16 ("1"6N) and Oxygen-19 ("1"90) activities. Efficacy of detection of these activities at designed detector position on SG blow down line in presence of background radiation field is analysed theoretically. The count rate of "1"9O and "1"6N estimated at the detector position inside Reactor Building (RB) shows that detectors only respond to very high leak rates due to presence of high background even though sensitivity is appreciably good. For detector position out side ...

2005-11-23

392

Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

An imaging detector for {gamma}-rays ({approx equal}1 MeV) based on minicell MWPCs with converters and a position resolution of {Delta}x=0.5 mm has been developed and tested. Very high rate capability (>10{sup 8}/cm{sup 2} s) and a special readout for suppression of scattered radiation are implemented allowing to enhance the measured contrast. The relevant physical processes are discussed and first pictures are presented. (orig.).

1991-12-01

393

A solution for solid state detector and preamplifier protection, during HV application and removal transition periods

The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation ...

1995-11-01

394

A large-acceptance Bragg curve spectrometer with a longitudinal electric field and a segmented anode

Surface barrier detectors may be damaged, because of microplasma breakdown, in rapid application of bias voltage. The high performance FETs of very low noise preamplifiers may also be damaged by rapid changes of the bias voltage. The electronic device described permits the gradual application and removal of the bias voltage, without any influence on the power supply specification. (Auth.).

395

Wafer and Solar Cell Characterization by GT-PVSCAN6000

A large-acceptance Bragg curve spectrometer with a longitudinal electron collection field and a segmented anode has been constructed and tested. The effects on the charge resolution of the entrance angle and entrance position of the incident particle have been studied. Simulations have been done in order to isolate the contribution to the overall detector performance of the signal-shaping electronics from that of the intrinsic design of the detector. ((orig.))

1994-07-15

396

Transient enhanced diffusion of boron in silicon: The interstitial flux

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

2002-08-01

397

Transient enhanced diffusion of boron in silicon: The interstitial flux

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...

1997-11-01

398

Thermal stability and acid resistance of aluminosilicophosphate zeolites

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...

1996-12-02

399

Silicon front-end technology -- Materials processing and modeling. Materials Research Society symposium proceedings Volume 532

By isomorphous replacement of silicon by phosphorus the authors have synthesized crystalline aluminosilicophosphates with structures of the zeolites type A and faujasite. They determine the adsorption capacity of specimens treated at 575-1275/sup 0/K. They show that the thermal stability and acid resistance of aluminosilicophosphates depend on the quantity of phosphorus in their structure.

1987-04-01

400

NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...

1998-07-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

401

Method of restoring degraded solar cells

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

1993-05-01

402

Metallization of large silicon wafers. Final report

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

1983-01-01

403

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...

404

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} ...

2004-11-15

405

J4P Evaluation of Externally Heated Pulsed MPD Thruster Cathodes

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...

2004-11-01

406

Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors

twenty 350 V, 2.5 mF aluminum electrolytic capacitors with 10.8 mH inductors made of multi-strand wire. The PFN discharge was controlled using an silicon ...

407

Investigations into the nature of a silicoaluminophosphate with the faujasite structure

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...

1992-08-28

408

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF{sub 2}{sup +} ion implantation into silicon

The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.

1987-04-29

409

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

2002-01-01

410

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

2004-06-30

411

INVESTIGATION OF GLASS-METAL COMPOSITE ...

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

2004-06-30

412

Evolution of surface roughness in silicon X-ray mirrors exposed to a low-energy ion beam

... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...

1957-09-01

413

Enhancing stability of austenitic stainless steels to intergranular corrosion in strongly-oxidising media by regulating composition of impurities

The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...

2010-05-01

414

Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At ...

1984-01-01

415

Displaced capillary dies

Chromized/siliconized diffusion coatings for iron-base alloy by pack cementation

An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.

1982-01-01

416

Changes in colonic motility induced by sennosides in dogs: evidence of a prostaglandin mediation.

This paper reports that the co-deposition of chromium and silicon into a 2.25Cr-1.0Mo-0.15C steel, alloy 800, and type 304 stainless steel has been achieved using the pack cementation process. The ferritic coating produced on the 2.25 Cr-1.0Mo steel was approximately 225 {mu}m (9 mils) thick, whereas the inward diffusion of chromium and silicon produced a two-phase structure of ferrite and austenite for type 304. Chromium and silicon were incorporated into the austenitic solid solution upon diffusion into alloy 800. All coatings had approximately 25 to 35 wt% Cr and 2 to 3% Si at the surface. Cyclic oxidation testing in air of the coated 2.25Cr-1.0Mo steel (T = 700{degrees} C) and type 304 (T = 1035{degrees} C) showed a dramatic decrease in the oxidation kinetics compared to the original uncoated alloys. The cyclic oxidation of alloy 800 was also improved.

1991-09-01

417

An analytic representation of the radial distribution of dose from energetic heavy ions in water, Si, LiF, and NaI

The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available

1988-09-01

418

2005 NASA Executive Capability Roadmap Report

An earlier representation of the radial distribution of dose about the path of a heavy ion in liquid water is modified and extended to include silicon, lithium fluoride, and sodium iodide. 6 refs., 5 figs., 1 tab.

1989-09-01

419

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon

ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...

420

Simple integral screenprinting process for selective emitter polycrystalline silicon solar cells

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

1998-09-18

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

421

Self-interstitial supersaturation during Ostwald ripening of end-of-range defects in ion-implanted silicon

This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.

1991-09-23

422

Reactive sticking coefficients for silane and disilane on polycrystalline silicon

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

1996-12-01

423

Polysilicon TFT fabrication on plastic substrates

Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.

1988-04-15

424

On the influence of silicon oxide nanoparticles on the optical and surface properties of hybrid (inorganic-organic) barrier materials

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

1997-08-06

425

Observation of a surface peak in low energy implant depth profiles in silicon

One of the major scientific and technological challenges for the production of flexible organic electronic devices is the device protection against atmospheric molecule permeation, which causes corrosion reducing its operation and lifetime. In this work, Spectroscopic Ellipsometry has been implemented to investigate the influence of silicon dioxide nanoparticles on the optical properties of hybrid polymers. The spectra analysis revealed valuable information about the electronic and vibrational response as well as the cross-linking mechanisms of these materials. The correlation of the optical properties with the synthesis parameters and the barrier response will contribute towards their optimization in order to be used as high barrier coatings for flexible organic electronics applications.

2009-10-01

426

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

1984-03-01

427

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1997-11-01

428

Measurement of liquid xenon scintillation from heavy ions using a silicon photodiode

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1996-12-02

429

Laser-assisted solar cell metallization processing. Quarterly report No. 6, March 1-June 30, 1985

Scintillation light in liquid xenon excited by 100 MeV/n Al ions was detected with a home-made silicon photodiode. The diameter of the photodiode was 2 inch. The effective quantum efficiency was observed to be 22% for the wavelength of liquid xenon scintillation light (170 nm), while the effective quantum efficiency for 5.486 MeV alpha-particle excitation was 44%. An energy resolution of 0.5% rms was achieved for the energy deposition of 2.5 GeV in liquid xenon using a fast preamplifier ({approx equal} 20 ns). (orig.).

1991-11-15

430

Development of low cost contacts to silicon solar cells

A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.

1985-07-25

431

Combining laser chemical processing and aerosol jet printing: a laboratory scale feasibility study

The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.

1980-01-01

432

British Library Electronic Table of Contents (United Kingdom)

Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.

2011-01-01

433

Use of the WNR spallation neutron source at LAMPF to determine the absolute efficiency of a neutron scintillation detector

Recent Progress in CdTe and CdZnTe Detectors

Prompt fission neutron spectrum measurements at the University of Massachusetts Lowell 5.5 MV Van de Graaff accelerator laboratory require that the neutron detector efficiency be well known over a neutron energy range of 100 keV to 20 MeV. The efficiency of the detector, has been determined for energies greater than 5.0 MeV using the Weapons Neutron Research (WNR) white neutron source at the Los Alamos Meson Physics Facility (LAMPF) in a pulsed beam, time-of-flight (TOF) experiment. Carbon matched polyethylene and graphite scatterers were used to obtain a hydrogen spectrum. The detector efficiency was determined using the well known H(n,n) scattering cross section. Results are compared to the detector efficiency calculation program SCINFUL available from the Radiation Shielding Information Center at Oak Ridge National Laboratory.

1994-06-01

434

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and (2) technique for improving energy resolution and photopeak efficiencies. Applications of these ...

2001-01-01

435

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

2004-12-21

436

Design and implementation of the BESIII detector-control system

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an ...

2002-01-01

437

Comparison of LaBr_3:Ce and NaI(Tl) Scintillators for Radio-Isotope Identification Devices

In the upgrade project of the Beijing Electron-Positron Collider (BEPCII), a novel Detector-Control System (DCS) for the Beijing Spectrometer (BESIII) has been built and started its successful operation for the BESIII Commissioning. The main task of the DCS is to monitor and control the status of the BESIII detector and to guarantee a safe operation of the detector. The DCS must provide a uniform and coherent interface to detector operators even though there are a large number of distributed I/O channels from a large variety of equipments. For this reason, the DCS is hierarchically organized and divided into three layers: front-end layer (FEL), local control layer (LCL) and global control layer (GCL). In the FEL, devices ranging from simple sensors up to complex computer-based devices like embedded systems and programmable logical controllers (PLC) are utilized. A LabVIEW-based software framework has ...

2008-07-21

438

SIMS analysis of silicon on insulator structures formed by high-dose O/sup +/ implantation into silicon

Lanthanum halide (LaBr_3:Ce) scintillators offer significantly better resolution (< 3% at 662 keV) relative to NaI(Tl) and have recently become commercially available in sizes large enough for the handheld, Radio-Isotope Identification Device (RIID) market. Drawbacks to lanthanum halide detectors, however, include internal radioactivity contributing to spectral counts, and a low-energy response which can cause detector resolution to be worse than that of NaI(Tl) below 100 keV. To study the potential of this new material for RIIDs we performed a series of measurements comparing a 1.5 x 1.5-inch LaBr_3:Ce detector with an Exploranium GR-135 RIID, which contains a 1.5 x 2.2-inch NaI(Tl) detector. Measurements were taken for short timeframes, as typifies RIID usage. Measurements included examples of naturally occurring radioactive material (NORM), typically found in cargo, and special nuclear materials. ...

2005-10-23

439

Molecular dynamics studies of silicon ion implantation

Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...

1983-12-15

440

Light-weight free-standing carbon nanotube-silicon films for anodes of lithium ion batteries.

Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary ...

1994-12-31

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

441

Gamma-ray pulse height spectrum analysis on systems with multiple Ge detectors using a spectrum summing

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...

2010-07-27

442

A large surface neutron and photon detector for civil security applications

A technique has been developed at the Idaho National Engineering Laboratory to sum high resolution gamma-ray pulse spectra from systems with multiple Ge detectors. Lockheed Martin Idaho Technologies Company operates a multi-detector spectrometer configuration at the Stored Waste Examination Pilot Plant facility which is used to characterize the radio nuclide contents in waste drums destined for shipment to Waste Isolation Pilot Plant. This summing technique was developed to increase the sensitivity of the system, reduce the count times required to properly quantify the radionuclides and provide a more consistent methodology for combining data collected from multiple detectors. In spectrometer systems with multiple detectors looking at non homogenous waste forms it is often difficult to combine individual spectrum analysis results from each detector to obtain a meaningful result for ...

1997-05-01

443

A large surface neutron and photon detector for civil security applications

The security of ports and transportation is of utmost importance for the development of economy and the security of a nation. Among the necessary actions to ensure the security of ports and borders, the inspection of containers is one of the most time consuming and expensive procedures. Potential threats are the illegal traffic of radioactive materials that could be employed for the construction of weapons, as uranium and plutonium. New techniques for the inspections of containers should be fast, allow the detection and identification of dangerous materials, and be non-invasive, to reduce costs and delays. We propose to build a large surface photon and neutron detector based on plastic scintillator to identify the presence of fissile or fertile material inside a container. The detector consists of scintillator bars, wrapped in thin foils of reflecting material containing gadolinium for neutron capture and arranged in planes separated by ...

2010-05-21

444

XPS study on the correlation between chemical state and oxygen-sensing properties of an iron oxide thin film

The security of ports and transportation is of utmost importance for the development of economy and the security of a nation. Among the necessary actions to ensure the security of ports and borders, the inspection of containers is one of the most time consuming and expensive procedures. Potential threats are the illegal traffic of radioactive materials that could be employed for the construction of weapons, as uranium and plutonium. New techniques for the inspections of containers should be fast, allow the detection and identification of dangerous materials, and be non-invasive, to reduce costs and delays. We propose to build a large surface photon and neutron detector based on plastic scintillator to identify the presence of fissile or fertile material inside a container. The detector consists of scintillator bars, wrapped in thin foils of reflecting material containing gadolinium for neutron capture and arranged in planes separated by ...

2010-05-11

445

Visible-wavelength semiconductor lasers and arrays

We have studied the correlation between the chemical state and the oxygen-sensing properties of an iron oxide thin film using a setup that allows simultaneous sensor resistance measurements and X-ray photoelectron spectroscopy (XPS) data acquisition. The gas exposures were performed at the highest operating pressure of the XPS spectrometer at a controlled sample temperature which allows direct comparison between the sensor response and the chemical state of the surface. The iron oxide film was modified by a sequence of argon ion sputtering steps and the induced changes in the chemical state, resistance, and sensitivity to oxygen were investigated. The sputtering was found to reduce the iron from the Fe"3"+ to the Fe"2"+ state and to decrease the sensor resistance. The measured sensitivity to oxygen first increased by a factor of two but then collapsed to its original level. The mechanism for oxygen sensing was found to be filling of the oxygen vacancies in the lattice. The effect of ...

2007-10-15

446

Thin TiO2 grown by metal?organic chemical vapor deposition on (NH4)2S x -treated InP

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

1996-09-17

447

British Library Electronic Table of Contents (United Kingdom)

The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...

2011-01-01

448

Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs

Radioisotope space power generator annual report for the period October 1, 1976-September 30, 1978

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on the surface of a semiconductor. The ...

2006-10-15

449

Preparation of TiO2/NiO composite particles and their applications in dye-sensitized solar cells

Techniques for fabricating P-type (Cu,Ag)/sub 2/Se with mesh-type bonds have been developed and are being evaluated for long-term use. In addition, methods for reducing vapor suppression by the use of coatings and/or baffling continue to show gains. The N-type alloy Gd/sub 2/Se/sub 3/ has been shown to be thermally unstable. It undergoes a sluggish cubic-to-orthorhombic phase change below 1000/sup 0/C, with an accompanying degradation in mechanical and thermoelectric properties. Fabrication studies conducted with the (Bi,Sb)/sub 2/(Se,Te)/sub 3/ alloys showed these materials to be sensitive to oxygen contamination if reproducible properties are to be obtained. Preparation of powdered material by explosive techniques was investigated. This technique appears to be useful in preparing homogeneous -325 mesh material, but it does not yield a useful amount of submicron-size powder.

1980-01-01

450

British Library Electronic Table of Contents (United Kingdom)

This study investigates the applicability of n-type TiO2 and p-type NiO on the FTO-glass (Fluorine doped tin oxide, SnO2:F) substrate of the working electrode in a dye-sensitized solar cell (DSSC). The working electrode was designed and fabricated by depositing a film of TiO2/NiO composite particles, which were prepared by mixing the Ni powder with TiO2 particles using dry mixing method, on a FTO-glass substrate using a spin coating process. The working electrode was then immersed in the solution of N-719 (Ruthenium) dye at a temperature of 70degreeC for 6h. Moreover, a thin film of platinum (Pt) was deposited on the FTO-glass substrate of the counter electrode using an E-beam evaporator. Finally, the DSSC was assembled, and the short-circuit photocurrent, the open-circuit photovoltage and...

2011-01-01

451

Minority-carrier lifetime damage coefficient of irradiated InP

Magnetization and 61Ni Moessbauer effect study of the ternary arsenide CrNiAs

Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5{times}10{sup 15} and 1.3{times}10{sup 17}cm{sup {minus}3}) and p-type (2.5{times}10{sup 17}cm{sup {minus}3}) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 10{sup 4} and 10{sup 5}, respectively. {copyright} {ital 1997 American Institute of Physics.}

1997-09-01

452

Improved AlGaInP-based red (670--690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design

The results of x-ray diffraction, dc magnetization, and 61Ni Moessbauer spectroscopy studies of the ternary arsenide CrNiAs are reported. This compound crystallizes in the orthorhombic Fe2P-type structure (space group P6-bar2m) with the lattice parameters a 6.1128(2) A and c = 3.6585(1) A. CrNiAs is a mean-field ferromagnet with Curie temperature TC = 171.9(1) K and the critical exponents ? 0.514(18), ? = 1.010(16), and ? = 2.922(10). The temperature dependence of the magnetic susceptibility above TC follows the modified Curie-Weiss law with a paramagnetic Curie temperature of 176.0(3) K and effective magnetic moment per transition metal atom of 2.42(1) ?B. The magnetic moment per formula unit at 4.2 K is found to be 1.114(33) ?B. The hyperfine magnetic field at 61Ni nuclei at 4.2 K of 41.5(1.0) kOe implies that the Ni atoms carry a magnetic moment of 0.15(3) ?B, and that the moment carried by the Cr atoms is 0.95(6) ?B. The Debye temperature of CrNiAs is 221(1) K.

2008-08-13

453

Growth of single-crystal metastable semiconducting (GaSb)_1/sub -//sub x/Ge/sub x/ films

A modified epitaxial design leads to straightforward implementation of short (1{lambda}) optical cavities and the use of C as the sole {ital p}-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

1995-07-17

454

Formation of high resistivity regions in [ital p]-type Al[sub 0. 5]In[sub 0. 5]P by ion implantation

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole concentrations varying from ...

6180-01-01

455

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.

1993-12-06

456

Use of primary electron counting for detection of ultrasoft x-rays with a low-pressure multistep gaseous detector

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

2004-09-01

457

Ultraviolet detectors based on ZnO films by thermal oxidation of Zn metallic films

The use of primary electron counting techniques as an alternative to the more usual parallel plate avalanche chamber that has been employed in soft x-ray scattering experiments is being investigated at the National Synchrotron Light Source. The theoretical aspects of primary electron counting and motivation behind building a primary electron counting detector are described, as well as characteristics and future improvements of the device constructed at the NSLS. The detector consists of a low electric field drift region and a low pressure multistep avalanche region which can be operated with two or three stages of electron multiplication. The device has worked well in extensive tests as a simple parallel plate avalanche chamber, providing energy resolutions of 58% and 43% at 277 and 500 eV, respectively. Operated as a primary electron counter, preliminary results show an energy resolution of 38% at 500 eV.

458

British Library Electronic Table of Contents (United Kingdom)

Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 ?C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.

2008-01-01

459

Superconducting strip detectors as position sensitive particle detectors

Status of combined point source search with neutrino telescopes IceCube and AMANDA

The feasibility of using of current-biased superconducting strips for radiation detection is investigated. Narrow Ta strips are exposed to 5.5 MeV [alpha]-particle radiation and the rise-time of the induced voltage pulses is measured as function of temperature and bias current. The rise-time of the voltage signal strongly depends on the site on the strip which is hit by the [alpha]-particle. In order to determine the spatial resolution of a superconducting strip detector, position-sensitive measurements were performed. The maximum lateral resolution estimated so far is 25[mu]m in a 7[mu]m wide, 340 nm thick and 0.6 mm long Ta-strip. (orig.)

1994-02-01

460

Spatial distribution of IGC-30 Ge-detector's efficiency

In this talk, we summarize recent results obtained from the combined neutrino telescopes IceCube and AMANDA. The combined approach, including data taken from both detectors simultaneously, is compared to other analyses that are using IceCube only data. The main benefit of the combined detector is its improved performance at low energies, meaning energies below 1 TeV (close to the energy threshold of the detector). The discussion is focused on the search for extra-terrestrial neutrinos from candidate sources in our Galaxy. Using appropriate cuts, the sensitivity can be optimized for soft spectra neutrino sources. With the resulting data sample, several studies are performed: an unbinned Galactic Plane Scan and a Cygnus region analysis: the Multi Point Source analysis. The current status of these analyses is presented.

2010-07-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

461

Some considerations about future interferometric GW detectors

The dependence of the efficiency of a coaxial IGC-30 Ge detector on the direction of gamma quanta entry, their energy and the distance from the source is examined. A set of point sources QCR-2 (Amersham, UK) has been used which is arranged consecutively in two perpendicular planes passing through the detector axis, at a distance of 0.1 - 1.3 m (pace 0.1) from its geometric centre for 16 different angles in every plane. Dependence curves of the efficiency on the angle of gamma-quanta hits are obtained for energies 60, 81, 122, 356, 662, 834, 1173 and 1332 keV. Changes in efficiency connected with spatial dividing ability are found out. Using the least squares' method the expected spatial distribution of efficiency is examined with a level of authenticity P > 0.9. The possible causes for the efficiency change and its possible effect on the measurements' precision are discussed. (author).

1993-12-02

462

Quartz fiber calorimetry and calorimeters

The two most important issues in designing future gravitational wave interferometric detectors are, in our opinion, thermal and optical noise. In this paper we discuss some approaches for reducing these noises. About thermal noise we show a possible cryogenic solution. About optical noise (namely, the combined effect of shot noise and radiation pressure noise) we show that it is possible to apply a recently proposed reduction strategy based on a 'quantum feedback' (Courty et al 2003 Phys. Rev. Lett. 90 083601; Courty et al 2003 Preprint gr-qc/0301068) to a full Fabry-Perot cavity. This can be seen as a further step towards the practical realization of a detector which is able to evade the standard quantum limit.

2004-03-07

463

Plane electrode device for multiwire detector for ionizing radiations

Quartz fiber calorimetry is a technique the signal generation mechanism of which is based on the Cherenkov effect. In this article we try to give a comprehensive overview of the subject. We start with a general introduction to calorimetry where the basic elements that characterize the development of electromagnetic and hadronic showers are discussed. Then we describe in detail the operation principle and the properties of calorimeters equipped with quartz fibers. The main advantages of this type of calorimeters are the radiation hardness, the fast response and the compact detector dimensions, features that derive from the quartz material and the specific mechanism of operation. A section is devoted to presenting the quartz fiber calorimeters that have been built or planned to in various experiments to operate as centrality detectors, trigger detectors, luminosity monitors or general purpose very forward calorimeters.

2004-01-01

464

Particle and X-ray damage in pn-CCDs

A multiwire proportional counter type detector with thin slits instead of wires is presented. It can detect either charged particles (positive or negative) or radiation. The detector can be used as a counter or as an image converter. In radiography, it can replace photographic film or TV camera systems. It can also be used to measure particle or radiation energy. The slits which replace wires in the anode are introduced between two parallel microstrip conductors with different potentials. A quasi-polar electric field is produced between these strips. To obtain high fields, the slits are extremely narrow. Microstrips less than a micron can be obtained, giving structural dimensions of a few microns, i.e., 100 times smaller than the spacing in a classic wire anode.

1986-07-01

465

Multichannel radiometric inspection systems with half-tone visualization of radiation shadow images. 1. Mathematical model

The fully depleted pn-junction charge coupled device (pn-CCD) has been developed as a detector for X-ray imaging and high-resolution spectroscopy for the X-ray satellite missions XMM and ABRIXAS. If the detector is exposed to a particle radiation environment, the energy resolution is degraded due to charge transfer losses and a dark current increase. In a first experiment, prototype devices were irradiated with 10 MeV protons. After completion of the detector development, the proton irradiation was repeated for a quantitative study of the radiation damage, relevant for the satellite missions. The irradiation test was extended by a 5.5 MeV {alpha}-particle and a 6 keV X-ray exposure of the pn-CCD, including the CAMEX preamplifier chip.

2000-01-11

466

Measurement of radon daughter product burden by TLD dosemeters

A mathematical model of multichannel radiometric inspection system was developed, in which the measurement results are reproduced in the form of a half-tone image equivalent to the radiation image of the irradiated object. The model makes the following assumptions: the beam of radiation is fan-shaped; the object of inspection is scanned discretely; the focal spot of the source is rectangular; the apertures of the detector are round, and the detectors themselves are equidistant from the sources, aimed at it, and form a close-packed array; the signals from the detectors are processed according to a time scheme; and the measurement results are corrected in a computer for normalizing the gains of the channels of the system. The mathematical model can serve as the basis for developing a method of calculating the optimal parameters of a multichannel radiometric system with visualization of the radiation images. 14 refs., 2 figs.

467

Magnetic beam position monitor

A miniature device is described for measuring integral potential alpha energy concentration of radon daughter products (Csub(Rn)) for personnel and stationary dosimetry. The measuring apparatus consists of an air sampler, filters and TLD detectors. CaSO_4:Dy-teflon pellets were used as the detectors which registrate #gamma# radiation as well. The TLD-effect dependence on the potential alpha energy, as well as the fading of the detectors at 20-60 deg C after 170 hrs operation are presentd. The fading up to 40 deg C has been found to be negligible. The dosimeter may be used to measure Csub(Rh) starting with the 10"5 MeVxh/1 threshold, the accuracy being not worse than +-30%.

468

Ion beam induced charge imaging of epitaxial GaN detectors

Many nondestructive beam position monitors are known. However, these devices can not be used for DC particle beam diagnostics. We investigated a method of beam diagnostics applicable for the operative control of DC high power e-beam inside closed waveguide. A design of the detector for determination of{open_quote} center of mass {close_quote} position of DC particle beam was developed. It was shown that the monitor can be used as a nondestructive method for the beam position control in resonators. Magnetic field of the particle beam outside a resonator is used. The detector consists of the steel yokes and magnetic field sensors. The sensors measure magnetic fluxes in the steel yokes fixed outside the resonator. When the particle beam changes its position, these magnetic fluxes also change. Beam displacement sensitivity of the monitor depends on the steel yoke dimensions. The detector sensitivity is equal to 1 Gauss/mm for ...

1995-12-31

469

Indoor radon concentration measurements in some Spanish houses and dwellings with plastic nuclear track detectors

We report the use of ion beam induced charge imaging to characterise the charge signal uniformity of epitaxial gallium nitride radiation detectors. The detectors were fabricated from 2 {mu}m thick semi-insulating gallium nitride, grown by MOCVD on a sapphire substrate. A carrier concentration of 1.4x10{sup 15} cm{sup -3} was measured using capacitance-voltage measurements. Ion beam induced charge imaging was carried out with a 2 MeV alpha particle beam focussed to a 3 {mu}m diameter and raster scanned across the device. The resulting ion beam images show excellent charge signal uniformity in this material with no evidence of material defects or polycrystalline structure on the micrometer length scale. No evidence of charge signal trapping was observed in these devices.

2004-09-21

470

Indoor radon concentration measurements in some Spanish houses and dwellings with plastic nuclear track detectors

A passive dosemeter, based on a Makrofol ED track detector covered with aluminized Mylar, enclosed in diffusion chamber, has been used for radon concentration studies. Detectors have been irradiated, using a {sup 241}Am source, at different energies and fluences in order to obtain the electrochemical etching conditions that allow the optimum registration of alpha particles having energies over 3 MeV. Thirty dosemeters have been sent to the UK National Radiation Protection Board (NRPB) Radon Environmental Chamber for calibration. The sensitivity of the dosemeter has been calculated. Several dosemeters have also been exposed in houses and dwellings in the Barcelona and Madrid areas for monitoring. Values for radon concentration in the areas under study are presented. (author).

1991-01-01

471

Indoor and outdoor Radon concentration measurements in Sivas, Turkey, in comparison with geological setting

A passive dosemeter, based on a Makrofol ED track detector covered with aluminized Mylar, enclosed in diffusion chamber, has been used for radon concentration studies. Detectors have been irradiated, using a "2"4"1Am source, at different energies and fluences in order to obtain the electrochemical etching conditions that allow the optimum registration of alpha particles having energies over 3 MeV. Thirty dosemeters have been sent to the UK National Radiation Protection Board (NRPB) Radon Environmental Chamber for calibration. The sensitivity of the dosemeter has been calculated. Several dosemeters have also been exposed in houses and dwellings in the Barcelona and Madrid areas for monitoring. Values for radon concentration in the areas under study are presented. (author).

472

British Library Electronic Table of Contents (United Kingdom)

Indoor and soil gas Radon (222Rn) concentration measurements were accomplished in two stages in Sivas, a central eastern city in Turkey. In the first stage, CR-39 passive nuclear track detectors supplied by the Turkish Atomic Energy Authority (TAEA) were placed in the selected houses throughout Sivas centrum in two seasons; summer and winter. Before the setup of detectors, a detailed questionnaire form was distributed to the inhabitants of selected houses to investigate construction parameters and properties of the houses, and living conditions of inhabitants. Detectors were collected back two months later and analysed at TAEA laboratories to obtain indoor 222Rn gas concentration values. In the second stage, soil gas 222Rn measurements were performed using an alphameter near the selected h...

2010-01-01

473

High Energy Neutrino Telescopes

Feasibility study of the iterative x-ray phase retrieval algorithm

This paper presents a review of the history, motivation and current status of high energy neutrino telescopes. Many years after these detectors were first conceived, the operation of kilometer-cubed scale detectors is finally on the horizon at both the South Pole and in the Mediterranean Sea. These new detectors will perhaps provide us the first view of high energy astrophysical objects with a new messenger particle and provide us with our first real glimpse of the distant universe at energies above those accessible by gamma-ray instruments. Some of the topics that can be addressed by these new instruments include the origin of cosmic rays, the nature of dark matter, and the mechanisms at work in high energy astrophysical objects such as gamma-ray bursts, active galactic nuclei, pulsar wind nebula and supernova remnants.

2008-01-01

474

Cooling device for impurity removal device in thermonuclear devices

An iterative phase retrieval algorithm was previously investigated for in-line x-ray phase imaging. Through detailed theoretical analysis and computer simulations, we now discuss the limitations, robustness, and efficiency of the algorithm. The iterative algorithm was proved robust against imaging noise but sensitive to the variations of several system parameters. It is also efficient in terms of calculation time. It was shown that the algorithm can be applied to phase retrieval based on one phase-contrast image and one attenuation image, or two phase-contrast images; in both cases, the two images can be obtained either by one detector in two exposures, or by two detectors in only one exposure as in the dual-detector scheme.

2009-01-01

475

Aging measurements of a TMAE-based photon detector for the HERA-B RICH

Purpose: To prevent structure material meltdown upon rupture of cooling pipeways in a impurity remover by preventing the coolants from flowing into the vacuum vessel while continuing the supply of coolants to other portions to be cooled. Constitution: Dual cooling pipeway systems are disposed to the neutralizing plates of the impurity remover. A rupture detector (pressure gage) is mounted to each of the cooling pipeways and flow rate control valves to be opened and closed by the signal from the detector are disposed to the upstream and downstream of the cooling pipeway. In this constitution if the cooling pipes should be ruptured, the coolant supply is stopped to the ruptured system in which the flow rate valve is closed by the signal from the rupture detector. However, since the coolant is kept to be supplied to the other system of the cooling pipeways, meltdown of the neutralizing plates can be prevented. (Kamimura, M.).

1983-08-26

476

Absolute subcriticality measurement without calibration and detection efficiency dependence by the /sup 252/Cf source-driven noise method

We report on aging measurements of a photon detector candidate for the HERA-B RICH. The prototype, a proportional wire chamber operated with TMAE, was mounted on an argon filled test-beam RICH and was aged by UV light at rates we expect in HERA-B. We monitored gain and current continuously, and checked the chamber with Cherenkov photons at regular intervals. The number of detected photons/track (projected to 2.75 m C sub 4 F sub 1 sub 0 in HERA-B) dropped from 26 to 11 after two days of aging - well below the 20 required for pi/K separation. Based on these results, HERA-B decided to use multi-anode PMTs as photon detectors in the RICH.

1999-01-01

477

A planar circular detector based on multiple point chemi- or bio-luminescent source within a coaxial cylindrical reactor

The /sup 252/Cf-source-driven noise analysis method determines the subcriticality of a system containing fissionable material from the ratio of cross power spectral densities between the detectors that detect particles from the fission process and between these detectors and an ionization chamber containing a spontaneously fissioning neutron source which provides neutrons to induce fission in the system. This method has two advantages: (1) a calibration is not required and thus subcriticality can be determined from measurements only on the subcritical system of interest, and (2) the subcriticality is independent of the type of detector or its efficiency. These properties of this technique are illustrated by measurements.

1984-01-01

478

British Library Electronic Table of Contents (United Kingdom)

An analytical method was proposed for calculating radiative fluxes incident on a planar circular detector from a volume multiple point chemi- or bio-luminescent source inside a coaxial cylindrical reactor. The method was designed for a cylindrical reactor when the surface reflections were neglected and when chemi- or bio-luminescence reaches a detector embedded in the same homogeneous optical medium as the point emitters of the volume multiple point source model. The radiative fluxes from arbitrarily distributed point emitters were expressed by one generalized quadruple-integral formula. Then some double- and single-integral formulas were obtained for calculating radiative fluxes from identically radiating point emitters uniformly distributed within the reactor. Selected results were compu...

2009-01-01

479

Synthesis of Si nanowires for MEMS cantilever sensor applications

Studies of dynamic contact of ceramics and alloys for advanced heat engines: Final report

We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the ...

2004-12-01

480

Novel silicon fabrication process for high-aspect-ratio micromachined parts

In support of the efforts to apply ceramics in advanced heat engines, a study was made of the sliding performance of ceramics at the ring/cylinder interface of low heat rejection engines. The objective was to understand the basic mechanisms controlling the wear of candidate ceramics and thereby identify means for applying these ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and several plasma-sprayed ceramic coatings without lubrication were unsuccessful because of high friction and high wear rates. Experiments using a polyalphaolefin lubricant at temperatures to 260 C identified several combinations having wear rates in the general range likely to be acceptable for engines. Plasma-sprayed coatings of chromium oxide and hypersonic powder flame sprayed coatings of cobalt-bonded tungsten carbide performed particularly well as ring coatings. Similar performance was obtained with these ring ...

1988-03-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

481

Use of solid state nuclear track detectors for radon concentration measurements indoors

Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...

1995-08-01

482

Search for free quarks at PEP

An indoor radioactive survey is being conducted in an Italian district. Preliminary results identified a zone with significant radioactive levels, in which a new specific survey has been planned. In this paper attention is dedicated mainly to radon measurement technique and results.

483

Radon concentration measurement in dwellings in Belgrade

The results of a search for fractionally charged particles produced in e/sup +/e/sup -/ annihilation at 29 GeV/c/sup 2/ are discussed. Results from cosmic-ray searches for fractionally charged particles, tachyons, and massive particles using the same detector are also presented.

1982-01-01

484

Photoconductive ultraviolet detectors based on ZnO films

The results of the radon concentration measurements in dwellings in Belgrade were shown in this paper. The measurements were done using long term method with diffusion cups equipped with solid state nuclear track detector LR-115-II or CR-39. (author).

485

Photoconductive ultraviolet detectors based on ZnO films

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant {tau} obtained from the curve fitting represents the ...

2006-12-15

486

Photoconducting properties of ultraviolet detectors based on GaN and Al{sub 1{minus}x}Ga{sub x}N films grown by ECR-MBE

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant #tau# obtained from the curve fitting represents the ...

2006-12-15

487

Photoconducting properties of ultraviolet detectors based on GaN and Al_1_-_xGa_xN films grown by ECR-MBE

GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1997-12-31

488

Optical Modelling of the HFI Instrument on Board the Planck Surveyor

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1996-12-02

489

Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces

The PLANCK SURVEYOR is a European Space Agency satellite mission to image the very faint anisotropies in the temperature of the Cosmic Microwave Background (CMB) radiation. Maynooth is actively participating in an international collaboration of scientists involved with the optical design of the High Frequency Instrument (HFI). This paper outlines research which has been undertaken in Maynooth concerned with numerical modelling of the optical characteristics of the multi-frequency array of detectors making up the HFI instrument. In the study the commercial software package ZEMAX was used to model the coupling of the focal plane HFI detectors to the PLANCK telescope. This package is particularly useful in the optical design of PLANCK because of the powerful optimisation features of the software. It is thus possible to readily determine the optimum positioning of the detectors in the focal plane of the telescope. Although the ...

1999-07-01

490

Measurements and elimination of Cherenkov light in fiber-optic scintillating detector for electron beam therapy dosimetry

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 ...

2006-07-01

491

Instrumentation and Controls Division progress report, September 1, 1980-July 1, 1982

In this study, a miniature fiber-optic radiation detector has been developed using a water-equivalent organic scintillator for electron beam therapy dosimetry. Usually, two kinds of light signals such as fluorescent and Cherenkov lights are generated in a fiber-optic radiation detector when a high-energy electron beam is irradiated. The fluorescent light signal is produced in the scintillator and is transmitted through a plastic optical fiber to a remote light-measuring device such as a PMT or a photodiode. The Cherenkov light could be also produced in the plastic optical fiber itself and be detected by a light-measuring device. Therefore, it could cause problems or limit the accuracy of the detection of a fluorescent light signal that is proportional to dose. The objectives of this study are to measure, characterize and eliminate Cherenkov light generated in a plastic optical fiber used as a component of a fiber-optic radiation ...

2007-08-21

492

Indoor radon concentration measurements by using SSNTD

Activities are reported by the Reactor Systems Section, Research Instrument Section, and the Measurement and Controls Engineering Section. Reactor system activities include dynamic analysis, survillanc and diagnostic methods, design and evaluation, detectors, facilities support, process instrumentation development, and special assignments. Activities in the Research Instrument Section include the Navy-ORNL RADIAC development program, advanced ..gamma.. and x ray detector systems, neutron detection and subcriticality measurements, circuit development, position-sensitive detectors, stand-alone computers, environmental monitoring-detectors and systems, plant security, engineering support for fusion energy division, engineering support for accelerator physics, and communications: radio, closed-circuit tv, and computer. Activities in the Measurement and Controls Engineering Section include the AVLIS program; ...

1982-12-01

493

Indoor radon concentration measurements

In this paper, some results of the indoor radon concentration measurements are presented. Kodac track detectors LR 115, bare and in a cup were used for these measurements. Average winter/summer ratio was determined for the town of interest. (author). 5 refs, 1 fig., 1 tab.

494

Explosives detection The problem and prospects

Some results of the indoor radon measurements are presented in this paper. Kodac track detectors LR-115 were used for these measurements. Average winter/spring ratio for indoor radon concentration was determined from the results obtained and is presented in this paper. (author).

495

Does DaYa-Bay Reactor Play an Important Role in Theta_{13} of Lepton Mixing (PMNS) Matrix ?

Explosives molecules have a number of unique properties. These properties are discussed. They include low vapor pressures, electronegativity, ''stickiness,'' frangibility, and thermal instability. The program for developing an advanced explosives detector is described.

1984-07-01

496

Daya Bay Neutrino Experiment

Reactor neutrinos play an important role in determining parameter theta_{13} in the lepton mixing (PMNS) matrix. Next important step on measuring PMNS matrix could be to build another reactor neutrino experiment in DaYa bay, China, to search the possible oscillations via sin^2 (2theta_{13}) and Delta m^2_{13}. We consider 4 different schemes for positions of three 8-ton detectors of this experiment, and simulate the results with respect to an array of assumed ''true'' values of physics parameters. Using three kinds of analysis method, we suggest a best scheme for DaYa-Bay which is to place a detector 2200m ~ 2500m symmetrically away from two reactors, and to put the other two detectors closer to their corresponding reactors respectively, almost at a 100m \\~ 200m distance. Moreover, with conservative assumption on the experimental technique, we construct series of allowed regions from our simulation results, and give ...

2004-01-01

497

Characterization system for Germanium detectors dedicated to gamma spectroscopy applied to nuclear waste

The Daya Bay Neutrino Experiment is proposed to measure sin^2(2\\theta_{13}) to better than 0.01 at 90% C.L. in a three-year run. The experimental site, detector design, and background estimation are presented.

2006-01-01

498

Black holes as detectors of tachyons

CEA-Valduc produces some radioactive waste (mainly alpha emitters). Legislation requires producers to sort their waste by activity and type of isotopes, and to package them in order to forward them to the appropriate reprocessing or storage facility. Our lab LMDE (laboratory for measurements on nuclear wastes and valuation) is in charge of the characterization of the majority of waste produced by CEA-Valduc. Among non-destructive methods to characterize a radioactive object, gamma-spectroscopy is one of the most efficient. We present to this conference the method we use to characterize nuclear waste and the system we developed to characterize our germanium detectors. The goal of this system is to obtain reliable numerical models of our detectors and calculate their efficiency curves. Measurements are necessary to checks models and improve them. These measurements are made on a bench using pinpoint sources ("1"3"3Ba, "1"5"2Eu) from 60 keV to ...

2009-06-07

499

Angular sensitivity distribution of detectors for BNCT

Tachyons fired into and absorbed by rotating black holes can violate the second and third laws of black hole physics. It is suggested that apparent break-downs of these laws in astrophysical black holes can indicate the existence of cosmic tachyons. (author).

500