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The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to ...

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship ...

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

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A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in ...

Energy Technology Data Exchange (ETDEWEB)

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, ...

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ...

International Nuclear Information System (INIS)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

British Library Electronic Table of Contents (United Kingdom)

Abstract A fabrication process for Emitter-Wrap-Through solar cells on monocrystalline material with high quality gap passivation by wet thermal silicon dioxide is investigated. Masking and structuring steps are performed by screen-printing technology. Via-holes are created by an industrially applicable high-speed laser drilling process. The cell structure features a selective emitter structure fabricated in a single high temperature step: a highly doped emitter at the via-holes and the rear side, allowing for a low via-hole resistivity as well as a low resistivity contact to screen-printed pastes, and a moderately doped front side emitter exhibiting high quantum efficiency in the low wavelength range. Therefore a novel approach is applied depositing either doped or undoped PECVD silicon d...

British Library Electronic Table of Contents (United Kingdom)

Heavily doped emitters with low saturation current density are of particular interest for selective emitter solar cells. These emitters can be obtained by laser doping through the phosphosilicate glass layer formed after thermal diffusion from POCl3 gas. The experimental results show that in contrast to purely POCl3 furnace-diffused emitters, the saturation current density of laser-doped emitters does not increase linearly as sheet resistance decreases, but rather features two distinct regimes. In one of these regimes, the saturation current density is found to decrease as the sheet resistance decreases, reaching values lower than those of furnace emitters. This peculiar behaviour was explained by both qualitative analysis and numerical simulations.

Energy Technology Data Exchange (ETDEWEB)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response ...

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the ...

Energy Technology Data Exchange (ETDEWEB)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

Energy Technology Data Exchange (ETDEWEB)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10{sup 17} to 3 x 10{sup 19} cm{sup -3}. (Author).

British Library Electronic Table of Contents (United Kingdom)

In recent years, increased attention has been focused on the use of lasers in different fabrication steps of solar cells, in particular laser doping to form emitter and/or selective emitter. In this method the laser energy is used to melt silicon, allowing the diffusion of dopant atoms to occur in the liquid phase. The main advantage of this method is the localised nature of the laser beam, which melts and diffuses a limited area without heating the bulk, therefore reducing the possible degradation associated with high temperature processes. At the University of New South Wales a novel laser doping method was developed, which combines the formation of the selective emitter with a self-aligned metallisation pattern. Despite achieving high efficiencies, concerns arose regarding the adhesion ...

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

International Nuclear Information System (INIS)

The valence and spin-state distributions of Co ions and the complex structure of antiferromagnetic Ba_2Co_9O_1_4 have led to the suggestion that doped Ba_2Co_9O_1_4 compounds may be good thermoelectric materials. We have checked this suggestion by measuring the magnetic properties as well as the transport properties of nominal Ba_1_._9A_0_._1Co_9O_1_4 (A=La or Na). We show that although all compounds are indicated to be single phase by powder X-ray diffraction analysis, they are all p-type polaronic conductors with low mobile-hole concentrations. Magnetic-susceptibility data of the parent and La-doped compounds give evidence of a second magnetic phase with ferromagnetic order setting in below 215 K; but this second phase is not seen in the Na-doped sample. We conclude that the structure is stabilized by oxidation and that cation exolution from the Ba_2Co_9O_1_4 structure creates cation vacancies that ...

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

Energy Technology Data Exchange (ETDEWEB)

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

Energy Technology Data Exchange (ETDEWEB)

Microcrystalline silicon carbide ({mu}c-SiC) was prepared at low substrate temperatures using Hot Wire chemical vapor deposition (HWCVD). High crystalline volume fractions were achieved at high hydrogen dilution and high deposition pressure. Without intentional doping, such material shows high dark conductivity and high optical absorption below the band gap. The material prepared at low deposition pressure or low hydrogen dilution, on the other hand, shows much lower conductivity and sub-gap absorption, but high spin densities up to 5 x 10{sup 19} cm{sup -3}. This high absorption can be attributed to free carriers, different to {mu}c-Si:H where a correlation between the sub-gap absorption and the spin density is observed.

Energy Technology Data Exchange (ETDEWEB)

Effects of dopant and coating carbon nanotube on anodic performance of Si were studied for metallic anode Li ion rechargeable battery with large capacity. Although the large Li intercalation capacity higher than 1500mAhg{sup -1} is exhibited on pure Si, it decreased drastically with increasing cycle number. Increasing the electrical conductivity by doping Cr or B is effective for increasing the initial capacity and the cycle stability of Si for Li intercalation. Coating semiconductive Si with the carbon nanotube by decomposition of hydrocarbon is effective for increasing the cycle stability, though the initial Li intercalation capacity slightly decreased. Conducting binder is also important for increasing the cycle stability and it was found that Li intercalation capacity higher than 1500mAhg{sup -1} can be sustained by using poly vinyliden fruolide. Consequently, reversible Li intercalation capacity of 1500mAhg{sup -1} was successfully sustained after 10th cycles ...

British Library Electronic Table of Contents (United Kingdom)

Doped ultrafine silicon dioxide powder with a narrow particle size distribution was obtained by RF discharge-stimulated dichlorosilane (SiH2C) oxidation at a low pressure using isobutylene as the combustion inhibitor and chromium hexacarbonyl (Cr(CO)6) as the dopant. The formation and morphology of the ultrafine particles are governed by the parameters of the RF discharge and by the chemical mechanism of the combustion reaction yielding the aerosol. Submicron-sized filamentous carbon structures can be obtained by isobutylene decomposition under spark discharge conditions in the presence of a molybdenum metal catalyst.

British Library Electronic Table of Contents (United Kingdom)

This study investigates the applicability of n-type TiO2 and p-type NiO on the FTO-glass (Fluorine doped tin oxide, SnO2:F) substrate of the working electrode in a dye-sensitized solar cell (DSSC). The working electrode was designed and fabricated by depositing a film of TiO2/NiO composite particles, which were prepared by mixing the Ni powder with TiO2 particles using dry mixing method, on a FTO-glass substrate using a spin coating process. The working electrode was then immersed in the solution of N-719 (Ruthenium) dye at a temperature of 70degreeC for 6h. Moreover, a thin film of platinum (Pt) was deposited on the FTO-glass substrate of the counter electrode using an E-beam evaporator. Finally, the DSSC was assembled, and the short-circuit photocurrent, the open-circuit photovoltage and...

Science.gov (United States)

Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.

International Nuclear Information System (INIS)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.

International Nuclear Information System (INIS)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising ...

Energy Technology Data Exchange (ETDEWEB)

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, ...

Energy Technology Data Exchange (ETDEWEB)

In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We simulate the time ...

Energy Technology Data Exchange (ETDEWEB)

There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

Energy Technology Data Exchange (ETDEWEB)

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

Energy Technology Data Exchange (ETDEWEB)

The main driver in ultra-shallow formation for the 65 nm technology node and beyond is to find solutions that both reduce boron transient enhanced diffusion and can be integrated in the CMOS process flow. To this end, many studies have recently focused on using co-doping techniques with fluorine and most recently with carbon. In most cases, one or both of these is co-implanted with a dopant specie in pre-amorphized silicon. In this work, we show a comparative study of fluorine or carbon co-implanted with low-energy boron to form source and drain extension junctions for PMOS devices. We will show that by a systematic optimization of germanium, boron, fluorine or carbon energies and doses, spike annealing technology can be extended to the 65 nm node. These results will be used to discuss how the different formed junctions offer potential solutions for either low-power or high-performance PMOS device fabrication.

International Nuclear Information System (INIS)

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at #lambda##approx#380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p- Al_0_._1_2Ga_0_._8_8N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_0_._1_2Ga_0_._8_8N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO_2 composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold ...

Energy Technology Data Exchange (ETDEWEB)

A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening process than pure ...

International Nuclear Information System (INIS)

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. The energy and flux of ions bombarding the growing films were ...

International Nuclear Information System (INIS)

Polish 2001 p. 105 Poland Bogacz, J. Budzanowski, M. Mazur, J. Swakon,

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of ...

Energy Technology Data Exchange (ETDEWEB)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second mechanism), can be explained. Numerical ...

Energy Technology Data Exchange (ETDEWEB)

The optically stimulated luminescence (OSL) results a highly appropriate dosimetric technique for readings of absorbed radiation 'in alive' and 'in situ', as well as in real time. The CVD diamond on the other hand presents excellent qualities like radiation reader thanks to its reproducibility, radiation resistance, biocompatibility and non toxicity. The present work studies the answer of two diamond films pure and polluted with nitrogen (750 ppm) grown by the Chemical Vapor Deposition method (CVD) on silicon substrate (001) irradiated with beta (Sr-90) in the 0.833-100 Gy interval. The optical stimulation was carried out by 40 seconds with infrared laser (830 nm, 0.36 W/cm{sup 2}) and the filter BG-39 (300-600 nm) coupled the PM. The intensity and the decay of the hyperbolic type of the LOE curves were similar in both samples, for the non doped diamond were observed trapping states in 200-380 C being ...

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

International Science & Technology Center (ISTC)

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power ...

British Library Electronic Table of Contents (United Kingdom)

Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.

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Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials ...

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and compensated a-Si:H is ...

Science.gov (United States)

Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in InAlP is attributed to the DX level found in the Al-containing material. The reduction ...

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left brace#311#right brace# defects during Ostwald ...

Energy Technology Data Exchange (ETDEWEB)

The world`s population of research reactors is growing old. Many have been adapted to serve new purposes over their lives, from testing materials for nuclear power programmes and supporting neutron physics experiments, to colouring gemstones, doping silicon and generating medical isotopes. In the first article of this survey of research reactor issues, Wilfried Krull from GKSS in Germany describes the effects on a reactor of supporting these changes in application as ``design ageing`` . Managing this and other symptoms of ageing to extend plant life is a key task for operators, and Krull discusses the efforts being made internationally to handle them. Eventually, terminal decline of one vital component can determine when a reactor has to be shutdown for refurbishment. For BR2 in Belgium, it was the beryllium matrix. Edgar Koonen from SCK-CEN explains work being done to replace it and extend reactor life for around 15 years. The Triga at the ...

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Fe-sheathed MgB{sub 2} tapes with cheap stearic acid, Mg stearate and Zn stearate doping were prepared through the in situ powder-in-tube method. It is found that J{sub c}, H{sub irr} and H{sub c2} were significantly enhanced by doping. Compared to the pure tapes, J{sub c} for all the doped samples was improved by more than an order of magnitude in a high-field regime. At 4.2 K, the transport J{sub c} reached 2.02 x 10{sup 4} A cm{sup -2} at 10 T for the Zn stearate doped tapes and 3.72 x 10{sup 3} A cm{sup -2} at 14 T for the stearic acid doped samples, respectively. Moreover, at 20 K, H{sub irr} for the Zn stearate doped tape achieved 10 T, which is comparable to that of the commercial NbTi at 4.2 K. The improvement of J{sub c}-H properties in doped samples can be attributed to the increase of H{sub c2} resulting from the incorporation of ...

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

CERN Document Server

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

CERN Document Server

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

International Nuclear Information System (INIS)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

Thermochromic tungsten-doped vanadium dioxide (VO2) powders were successfully synthesized by thermal reduction using V2O5 as a vanadium precursor. The products were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and differential scanning calorimetry (DSC). The results indicated that W was successfully doped into the crystal lattice of VO2 matrix, and prepared tungsten-doped VO2 had a rod-like morphology. The effects of reducing temperature and annealing temperature on the crystallographic structures were also discussed. The phase transition temperature (Tt) of VO2 could be simply tuned by changing the doping concentration of tungsten. When the doping concentration was 1.58 mol%, the Tt could be reduced to 37.8 oC from initial 69.5 oC, suggesting that tungsten-doped VO2 possesses prominent ...

Energy Technology Data Exchange (ETDEWEB)

Conductivity and Hall effect measurements were made in dark and IR-photoexcited p-type ZnTe samples between 77 and 300 K. Acceptor vacancy complexes of activation energies 0.09-0.1 eV were found to be present in the photoexcited samples. Different possible scattering mobilities were considered for both samples to explain the observed hole mobility. In the photoexcited sample a scattering mobility due to vacancy complexes was suggested for the first time to explain the results. The scattering centres were associated with native vacancy complexes segregated at the dislocations sites. The expression for the complex scattering mobility has been deduced using the curve fitting method to be {mu}{sub C}=(6.6x10{sup -11})T{sup 5} e{sup 725/T}. (orig.).

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

British Library Electronic Table of Contents (United Kingdom)

This work is concentrated on growth, spectroscopy and laser performance of thulium-doped vanadate crystals. At the beginning the growth techniques are analyzed and then the matrix of vanadates crystal, its structure and physicochemical properties are explained together with the rare earth activators influence. Detailed spectroscopy of the thulium-doped vanadate crystals then follows. On the background of this theoretical analysis and state of the art of the subject the description of thulium vanadate lasers (especially Tm:YVO"4, Tm:GdVO"4, and Tm:LuVO"4) together with their generated output radiation characteristics are presented.

Energy Technology Data Exchange (ETDEWEB)

Surface doping of conjugated polymers is realized by depositing a thin layer of graphene oxide (GO) on top of the polymers. The high proton density and the unique 2D structure of GO facilitate the protonic surface doping of conjugated polymers to achieve high conductivities. This finding represents a new strategy for improving charge transport across the metal/conjugated polymer interface to achieve much improved performance in organic solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Energy Technology Data Exchange (ETDEWEB)

Electron paramagnetic resonance was used to investigate surface-coated magnetite-based magnetic fluids doped with TEMPOL. Two magnetic fluid samples, having magnetite nanoparticles with average diameter of 94 A and coated with different coating layers (lauric acid plus ethoxylated polyalcohol in one case and oleoylsarcosine in the other case), were doped with TEMPOL (6 mM and pH 7.4) and investigated as a function of the nanoparticle concentration. The resonance field and the resonance linewidth both scale linearly with the nanoparticle concentration.

British Library Electronic Table of Contents (United Kingdom)

N-doped TiO2 has been prepared by use of sol?gel systems containing titanium alkoxide, with nitric acid as the nitrogen source. The time needed for gelation of the systems was drastically reduced by ultrasonic irradiation. The peaks assigned to the nitrate and nitrous ions were observed by FT-IR measurement during the sol?gel reaction. The N-doping was confirmed by the observation of N?O peaks in the XPS spectrum of the sample heated at 400??C. The nitrate ion acted as an oxidizer of the ethanol solvent and titanium species. The TiO2 became doped with nitrogen oxide species as a result of reduction of nitrate ion incorporated into the dried gel samples. These results indicated that the added nitric acid was reduced during the sol?gel transition and heating process, and the resulting NO spe...

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

International Nuclear Information System (INIS)

Portuguese 2008 2 p. Brazil Silva, Diogo Lima da Andrade, Leonardo

Energy Technology Data Exchange (ETDEWEB)

Alkali metal doped double perovskites containing manganese and at least one of cobalt, iron and nickel are useful in the oxidative coupling of alkane to higher hydrocarbons.

International Nuclear Information System (INIS)

Dy doped #alpha#-SiAlON ceramics prepared by the hot-pressing method show a high optical transmittance value, >70%, in the infrared region of 1.5-4.5 #mu#m. First principles calculations have been carried out to reveal the underlying transparency mechanism. It is found that the valence shell of doped Dy atoms interacts strongly with the doping states of #alpha#-SiAlON, resulting in the increase in the optical gap from 0.4 to 1.1 eV, which suppresses the photoabsorption in the wavelength region longer than 1.0 #mu#m and leads to the good transparency property. The calculated optical transmission spectra are in good agreement with the corresponding experiments.

Energy Technology Data Exchange (ETDEWEB)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

International Nuclear Information System (INIS)

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

CERN Document Server

In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

Science.gov (United States)

... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

International Nuclear Information System (INIS)

Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.

Science.gov (United States)

We show that the size of a lanthanide-ion doped nanoparticle can be accurately determined from its luminosity. The optically determined size distribution is in very good agreement with the distribution obtained from transmission electron microscopy. These data confirm that single nanoparticles are visualized in microscopy experiments. Nanoparticles as small as 13 nm are detectable with integration times of 500 ms.

Energy Technology Data Exchange (ETDEWEB)

Titanium and aluminum alkoxide derivatives with polymerizable ligands such as 2-(methacryloyloxy)ethylacetoacetate (HAAEMA), oleic acid and geraniol (HOGE) have been obtained. The various compounds have been characterized by FT-IR and NMR {sup 1}H. Copolymerization with styrene and divinylbenzene affords porous doped organic materials which have been characterized by scanning electron microscopy (SEM), elemental analysis, density measurements.

Energy Technology Data Exchange (ETDEWEB)

A series of N-carbazolyl-substituted silane homo- and copolymers has been prepared by Wurtz coupling. Doping with iodine on these copolymer films increases the electrical conductivity to the range 10{sup -6}-10{sup -3} S cm{sup -1}. The conductivity depends strongly on the composition of the copolymer; it reaches the maximum value for N-carbazolyl-substituted silane homopolymer. The effects of carbazolyl group on conductivity and charge transport mechanisms in the polymer are discussed. (orig.)

International Nuclear Information System (INIS)

Cerium is known to enter substitutionally in trivalent state when doped in alkali halides. Cerium doped NaCl crystals exhibit greatly enhanced thermoluminescence output upon X-irradiation at RT, the intensity of emission being about 10 times that in undoped crystals for similar dosage of irradiation. The cerium doped crystals give upon X-irradiation a very intense glow peak at 145degC with shoulders at 120degC and 210degC. Upon partially bleaching the crystal with F-light, the peak at 120degC becomes prominent probably due to faster bleaching of the glow at 145degC. From further optical bleaching studies, it is concluded that the glow peak at around 120degC is due to cerium centres in the irradiated crystal and the 145degC peak due to F centres. This F centre emission occurs at lower temperature, compared to that in the undoped crystals where it occurs at around 180degC. The spectral emission in the Ce ...

British Library Electronic Table of Contents (United Kingdom)

In this work, bismuth sodium titanate (Bi0.5Na0.5)TiO3 (BNT) and praseodymium (Pr)-doped BNT were successfully produced using the soft combustion technique. The effects of Pr doping on stoichiometry, microstructure, density and dielectric properties were studied. Pure Pr-doped BNT was obtained in all samples containing 5, 10 and 20mol% Pr after calcination at 800^oC for 3h. The produced powders were then pressed into pellets and sintered at 1100^oC for 3h. The very similar ionic radii of Pr^3^+ with Bi^3^+ and Na^+ made it possible to substitute both Bi and Na. The crystallite size and grain size decreased with increasing Pr amount because Pr acted as grain growth inhibitor, both for calcined powders and for sintered pellets. Maximum density was obtained in 5mol% Pr-doped BNT, beyond which...

Science.gov (United States)

The primary concern of this work is to study the emission characteristics of a series of chiral nematic liquid crystal lasers doped with different laser dyes (DCM, pyrromethene 580, and pyrromethene 597) at varying concentrations by weight (0.5-2 wt %) when optically pumped at 532 nm. Long-wavelength photonic band-edge laser emission is characterized in terms of threshold energy and slope efficiency. At every dye concentration investigated, the pyrromethene 597-doped lasers exhibit the highest slope efficiency (ranging from 15% to 32%) and the DCM-doped lasers the lowest (ranging from 5% to 13%). Similarly, the threshold was found to be, in general, higher for the DCM-doped laser samples in comparison to the pyrromethene-doped laser samples. These results are then compared with the spectral properties, quantum efficiencies and, where possible, fluorescence lifetimes of the dyes ...

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

Energy Technology Data Exchange (ETDEWEB)

Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

International Nuclear Information System (INIS)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other ...

Energy Technology Data Exchange (ETDEWEB)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(lambda) and ...

Energy Technology Data Exchange (ETDEWEB)

We fabricated lauric acid (LA) doped MgB{sub 2} wires and investigated the effects of the LA doping. For the fabrication of the LA-doped MgB{sub 2} wires, B powder was mixed with LA at 0-5 wt.% of the total amount of MgB{sub 2} using an organic solvent, dried, and then the LA-treated B and Mg powders were mixed stoichiometrically. The powder mixture was loaded into an Fe tube and the assemblage was drawn and sintered at 900 deg. C for 3 h under an argon atmosphere. We observed that the LA doping induced the substitution of C for the B sites in MgB{sub 2} and that the actual content of C increased monotonically with increasing LA doping level. The LA-doped MgB{sub 2} wires exhibited a lower critical temperature (T{sub c}), but better critical current density (J{sub c}) behavior in a high magnetic field: the 5 wt.% LA-doped sample had a J{sub ...

International Nuclear Information System (INIS)

Mn-modified Pb0.92La0.08(Zr0.65Ti0.35)O3 (PLZT) was prepared chemically by a coprecipitate method using their respective nitrate salts and isopropoxides. Differential thermal analysis (DTA) and X-ray analysis clearly show the formation of PLZT single rhombohedral phase for samples calcined beyond 750 C. Uniform grain distribution was observed from scanning electron microscopic (SEM) studies and grain size was found to increase with Mn doping up to x=0.08 and then decreased. Dielectric measurement shows the decrease in peak transition temperature (TC) with Mn doping up to x=0.12 and then increase along with a sharp rise in dielectric maxima. A diffuse dielectric dispersion is observed in all the compositions. A detailed dispersion study was carried out using the Vogel-Fulcher empirical relation, a universal relaxation law and the Havriliak-Negami function. The Vogel-Fulcher relation fitting parameters of activation energy and freezing ...

International Nuclear Information System (INIS)

Lead is known to enter substitutionally in divalent state when doped in alkali halides. When irradiated at room temperature these lead centers (Pb"+"+) act as traps for electrons knocked off from the halogen ions and become Pb"+ and Pb"0 (for large doses of irradiation). These changes could be followed in the optical absorption studies. These lead-doped crystals after X-ray irradiation yield a thermoluminescence output smaller than that observed in 'pure' crystals. However, two new glow peaks are observed in additions to those due to F-centers. In KCl : Pb and Kbr : Pb crystals part of the F-center glow preceds the new glow peaks. The new peaks are attributed to the Pb"+ and Pb"0 centers. The glow peak temperatures and trap depths for these peaks an obtained by total-curve fitting method are reported. (author).

International Nuclear Information System (INIS)

LaPO4 single crystals lightly doped with Er3+, and codoped with Er3+ and Yb3+ have been grown by spontaneous nucleation in a lead phosphate flux. Absorption and luminescence spectra have been measured in the visible and near-IR regions and the excited state dynamics has been studied upon pulsed laser excitation. The obtained results have allowed the evaluation of the effective emission cross-sections around 1.5 ?m, that have been found to be similar to important oxide laser crystals doped with Er3+. Efficient visible upconversion has been observed upon excitation at 980 nm in the codoped crystals. This behaviour is attributed to Yb3+-Er3+ energy transfer processes.

British Library Electronic Table of Contents (United Kingdom)

We have investigated the effect of manganese (Mn) doping on properties of nanosized biphasic calcium phosphate powders and their dense bodies. Manganese levels of 0.6, 1.3, 1.9, 4.3, 7.0 and 11.9at.% were successfully incorporated into biphasic calcium phosphate via a sol-gel route. The prepared powders were calcined at temperatures of 500-1200^oC. The X-ray diffraction analysis revealed that a mix phase comprising of hydroxyapatite and @b-tricalcium phosphate were present, however the content of each phases in the structure was affected by the Mn content. The studies found that the largest portion of @b-tricalcium phosphate was detected at 4.3at.% Mn doping. The incorporation of Mn has also greatly increased the crystallinity of the biphasic calcium phosphate powder due to progressive den...

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

Energy Technology Data Exchange (ETDEWEB)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

International Nuclear Information System (INIS)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate ...

British Library Electronic Table of Contents (United Kingdom)

The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The Eg values of the CdO films were found to be in the range of 2.26?2.60?eV. The Eg values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size o...

International Nuclear Information System (INIS)

The fundamental optical properties of dysprosium (Dy) doped strontium sulfide bulk samples for various dopant concentrations from 0.1 to 1.0 at.% were investigated by X-ray diffraction (XRD), electron paramagnetic resonance spectroscopy (EPR), room temperature photoluminescence (PL), photoluminescence excitation (PLE) and diffuse reflectance spectroscopy (DRS). Investigations by electron paramagnetic resonance yielded the state of Dy in the sample as Dy3+. An additional ESR line due to F+ center was observed. The PL emission spectrum consisted of several intense lines and a number of weaker ones which were identified as transitions between energy levels of Dy3+. The optimum doping concentration for maximum intensity was found to be 0.25 at.%. Blue shift of the absorption edge energy and red shift of the PLE spectrum were observed with increasing doping concentration. The former is due to Burstein-Moss (BM) effect and the ...

International Nuclear Information System (INIS)

We studied the effects of co-doping with Li and Al on the energy gaps of MgB2 by performing point-contact Andreev-reflection spectroscopy (PCAR) in polycrystalline Mg1-x(Al?Li1-?)xB2 samples with x?0.4. Even though the lattice parameters and the critical temperature of the compound simply scale with the effective Al content ?x, irrespective of the Li concentration, the energy gaps do not. In particular, for a given effective Al content, the comparison with Mg1-y(Al)yB2 with y = ?x shows that the ? bandgap is practically the same while the ? bandgap is higher. A clear gap merging is observed in the most doped sample (x = 0.4) when Tc<20 K. The results are discussed within the two-band Eliashberg theory and compared to the outcomes of first-principles calculations of the effects of Li and Al co-doping on the electronic structure of magnesium diboride.

British Library Electronic Table of Contents (United Kingdom)

A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...

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This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)

International Nuclear Information System (INIS)

English Jul 2001 p. 143-144 China Liu Changlong Academia Sinica,

Science.gov (United States)

Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...

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In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

International Nuclear Information System (INIS)

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

International Nuclear Information System (INIS)

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

International Science & Technology Center (ISTC)

Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

British Library Electronic Table of Contents (United Kingdom)

We propose and demonstrate experimentally a singlelongitudinal-mode (SLM) fiber double-ring laser using an Erbium-doped waveguide amplifier (EDWA), polarization controller (PC), and a fiber Fabry-Perot tunable filter (FFP-TF) into the ring cavity. In addition, the output power, side-mode suppression ratio (SMSR), and the stabilities of power and wavelength of the laser also are investigated. (Copyright 2007 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA)

International Nuclear Information System (INIS)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor ...

Energy Technology Data Exchange (ETDEWEB)

A solar cell structure is produced by a method comprising baking the solar cell, containing a gridded top layer of cuprous sulfide formed on a base of cadmium sulfide, for 20 minutes to 10 hours, to produce a copper doped cds electrically insulating region in the cadmium sulfide base near the interface of the cuprous sulfide and the cadmium sulfide; removing the cuprous sulfide, and the copper doped cds insulating region not covered by the grid, to provide a bare cadmium sulfide areas; and then forming a cuprous sulfide layer on the exposed areas not covered by the grid.

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Fuel cells based on solid oxides ('SOFC') are excellent alternative devices for power generation, when they are operated at high temperature, e.g. above 600 C. Having only fixed parts for the power generating part of the device is only one advantage of the fuel cell. Due to their unique design, these devices offer a maximum of efficiency for energy conversion compared to conventional power generating systems, which are mainly based on turbines. One aim of this thesis is the examination of alternative electrolyte and cathode materials for the SOFC applications at reduced temperatures, which means in the temperature range between 600 C and 750 C. For the first main task, several materials from the oxygen ion conducting electrolytes were selected. Different strontium and magnesium doped lanthanum gallate (LSGM) materials with additional transition metal doping were selected and prepared via two different preparation methods. The ...

Science.gov (United States)

We have demonstrated fluorescence resonance energy transfer (FRET) between lanthanide-ion doped oxide nanoparticles acting as donors and organic acceptor molecules (Cy5). Due to the long nanoparticle lifetime and the large Stokes shift between nanoparticle absorption and emission, unambiguous and precise FRET measurements can be performed despite the presence of large free acceptor oncentrations. We determined FRET efficiencies as a function of Cy5 concentration which are in very good agreement with a multiple acceptor-multiple donor calculation.

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We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

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The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

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Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

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The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

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Passive films formed on stainless steels in a borate buffer solution (pH 9.2) have been investigated by capacitance measurements and photoelectrochemistry. The study was carried out on films formed on AISI type 304 and 316 stainless steels and high purity alloys with differing chromium, nickel, and molybdenum contents. Complementary research by Auger analysis shows that the passive films are composed essentially of an inner chromium region in contact with the metallic substrate and an outer iron oxide region developed at the film/electrolyte interface. The semiconducting properties of the passive films are determined by those of the constituent chromium and iron oxides which are of p-type and n-type, respectively. Thus the influence of the alloying elements on the semiconducting properties of the passive films is explained by changes in the electronic structure of each of these two oxide regions.

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The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

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The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...

International Nuclear Information System (INIS)

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...

CERN Document Server

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...

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We summarize the results of point-contact Andreev-reflection (PCAR) spectroscopy in MgB{sub 2} doped by chemical substitutions, either magnetic (Mn) or non-magnetic (Al,C), obtained by us and by other groups in the last four years. Despite the variety of samples used (crystals and polycrystals of various origin) and some minor differences in the experimental techniques, these measurements have directly provided a complete and consistent picture of the effects of chemical substitutions on the gaps of MgB{sub 2} shedding light on other relevant parameters (scattering rates, DOSs) affected by doping. In Al-doped crystals and polycrystals, the gap amplitudes {delta}{sub {sigma}} and {delta}{sub {pi}} - obtained through a two-band Blonder-Tinkham-Klapwijk (BTK) fit of the Andreev-reflection conductance curves - decrease on increasing the Al content x (i.e. on decreasing the critical temperature of the contacts T{sub c}{sup A}), ...

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Doping of molecular organic materials is important for the functionality of organic electronic devices as e.g solar cells. We investigated the doping behaviour of the acceptor molecules Cl{sub 2}-DCNQI and F{sub 16}CuPc incorporated into a CuPc matrix. In-situ XPS/UPS measurements were performed on coevaporated films. Doping by Cl{sub 2}-DCNQI was not successful. The molecule lost its chlorine atoms during thermal evaporation. For pristine F{sub 16}CuPc layers we observe a strong broadening of the photoemission features with increasing deposition rate indicating different domains probably of different molecular structure of differing electric interface potential. F{sub 16}CuPc incorporated into CuPc shows sharp photoemission features. With increasing F{sub 16}CuPc content Fermi level shifts are observed in both phases. In CuPc the maximum shift is about 0.45 eV towards the HOMO level indicating ...

Energy Technology Data Exchange (ETDEWEB)

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

Energy Technology Data Exchange (ETDEWEB)

The effect of powder particle sizes of n- and p-Bi2Te3 on the thermoelectric properties has been studied. The powder was formed from the each ingot and sieve into <63, 63-90 and 90-150{mu}m for p-type, and <355 and >355 {mu}m for n-type. Those powders are pressed followed by CIP, then sinterd at 773K for S. Effects of CIP on the densities were not so large such as 1-4% depending on the powder sizes. The Setback coefficients and electric conductivities for p-type were 110{mu}V/K and 0.8{times}10{sup 2}ohm{sup -1}m{sup -1} at 333K, while 18O{mu}V/K and 2.0{times}10{sup 4}ohm{sup -1}m{sup -l} for n-type, respectively. The thermal conductivity for n-type was 0.7W/mK leading to the figure of merit of 2.1{times}10{sup -3}(/K). The hybrid texture of the suitable amount of smaller and larger grains has a possibility of an improvement for thermoelectric properties. 10 refs., 5 figs., 5 tabs.

International Nuclear Information System (INIS)

Tm3+ and Dy3+ ions co-doped aluminoborosilicate glasses were prepared in this study. The luminescence properties of the glasses were analyzed. A combination of blue, green, yellow, and red emission bands was shown for these glasses, and white light emission could be observed under UV light excitation. White light luminescence color could be changed by varying the excitation wavelength. Concentration quenching effect was investigated in this paper. Furthermore, the dependence of luminescence properties on glass compositions was studied. Results showed that the luminescence intensity changed with different network modifier oxides, while the white color luminescence was not affected significantly. - Graphical abstract: Tm3+ and Dy3+ ions co-doped aluminoborosilicate glasses, which emit white light under UV light excitation, were prepared. The dependence of luminescence properties on glass compositions was studied, and results showed that the white ...

Energy Technology Data Exchange (ETDEWEB)

Praseodymium-doped Bi{sub 4}Ti{sub 3}O{sub 12} (BIT) with various compositions of dopant, Pr (x = 0.5, 0.6, 0.7, 0.8) in Bi{sub 4-x}Pr{sub x}Ti{sub 3}O{sub 12} (BPT) were synthesized using a low temperature wet chemical technique. Powders calcined at 800 deg. C exhibit a single phase polycrystalline perovskite bismuth-layered structure. Randomly oriented plate-like structures were observed under Scanning Electron Microscope (SEM). A small amount of Pr doping (x = 0.5) resulted in dramatically reduced of grain size from 2 {mu}m to less than 50 nm in which Pr plays the role as a grain growth inhibitor. However, by increasing the composition of Pr, bigger grain size of up to 1 {mu}m was observed for x = 0.8 that was caused by diffusion of Pr in the perovskite structure. Dielectric properties showed that dielectric permittivity decreased with the addition of x = 0.50, and increasing with further addition of Pr. Dissipation factor (tan {delta}) ...

British Library Electronic Table of Contents (United Kingdom)

Praseodymium-doped Bi4Ti3O12 (BIT) with various compositions of dopant, Pr (x=0.5, 0.6, 0.7, 0.8) in Bi4-xPrxTi3O12 (BPT) were synthesized using a low temperature wet chemical technique. Powders calcined at 800degreeC exhibit a single phase polycrystalline perovskite bismuth-layered structure. Randomly oriented plate-like structures were observed under Scanning Electron Microscope (SEM). A small amount of Pr doping (x=0.5) resulted in dramatically reduced of grain size from 2mm to less than 50nm in which Pr plays the role as a grain growth inhibitor. However, by increasing the composition of Pr, bigger grain size of up to 1mm was observed for x=0.8 that was caused by diffusion of Pr in the perovskite structure. Dielectric properties showed that dielectric permittivity decreased with the ad...

International Nuclear Information System (INIS)

Synthesis of Eu-doped #beta#- and 15R-SiAlONs was studied by the ammonia nitridation of precursors derived from an #alpha#-Si_3N_4 fine powder dispersed in aluminum glycine gel with various Si/Al ratio and post-annealing in a nitrogen pressure furnace. The largest amount of #beta#-SiAlON was observed in the product at 1750 deg. C for Si/Al = 1/1 with small amounts of both #alpha#- and 15R-SiAlON impurities. The product showed two emissions at around 420 nm and 560 nm. The emission intensities decreased with increasing amount of #beta#-SiAlON. The former and latter emissions were assigned to Eu"2"+ in the 15R- and #alpha#-SiAlONs impurities. A mixture of Eu-doped 15R-SiAlON with #alpha#-Al_2O_3 impurity was obtained for Si/Al = 1/6, using AlN together with Al(NO_3)_3.9H_2O in a 2/1 atomic ratio as the aluminum source. It showed a bluish-white emission at 450 nm under 254 nm radiation.

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A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

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A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

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We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

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The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)

Energy Technology Data Exchange (ETDEWEB)

A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}

International Nuclear Information System (INIS)

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.

Energy Technology Data Exchange (ETDEWEB)

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

International Nuclear Information System (INIS)

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

Science.gov (United States)

A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

British Library Electronic Table of Contents (United Kingdom)

An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...

International Nuclear Information System (INIS)

The intensity of erbium up-conversion luminescence could be limited by a saturation effect due to increased pump power. We studied the luminescence saturation of the 550 nm emission on erbium-doped, SiO_2-TiO_2 sol-gel powders under pulsed excitation at 979 and 1532 nm. From the latter, the up-converted luminescence intensity decreased with increasing excitation power, whereas no saturation was observed at 979 nm excitation. We proposed that the saturation effect is determined by the pump power, the erbium content and the lifetime of the corresponding first excited states at different pumping schemes.

British Library Electronic Table of Contents (United Kingdom)

Direct visualization of rare earths in @a- and @b-SiAlON unit-cells is performed through Z-contrast imaging technique in an aberration-corrected scanning transmission electron microscope. The preferential occupation of Yb and Ce atoms in different interstitial locations of @b-SiAlON lattice is demonstrated, yielding higher solubility for Yb than Ce. The triangular-like host sites in @a-SiAlON unit cell accommodate more Ce atoms than hexagonal sites in @b-SiAlON. We think that our results will be applicable as guidelines for many kinds of rare-earth-doped materials.

International Nuclear Information System (INIS)

This paper presents results of studying the thermo-transferred thermoluminescence (TTTl) phenomenon in potassium-yttrium double fluoride doped with terbium (K_2YF_5_:Tb) at different impurity concentrations (0.8%, 0.95% and 0.99%). Previously to study the TTTl phenomenon, structural characterization and chemical composition of the materials were determined. The structural studies were conducted using a scanning electron microscope; meanwhile, chemical composition was analyzed using energy dispersive X-ray spectroscopy. Thermoluminescence kinetics was studied irradiating the samples with "1"3"7Cs gamma rays as well as with "9"0Sr/"9"0Y beta rays, analyzing the glow curves by the deconvolution method for obtaining the kinetic parameters. (Author)

Energy Technology Data Exchange (ETDEWEB)

Motivated by the discovery of superconductivity in alkali and alkaline earth fullerides, this program was undertaken both to understand the nature of and expand the range of materials demonstrating superconductivity. The first approach involved attempts to modify the fullerene cage by incorporating heteroatoms in the structure and the preparation and photophysical properties of nitrogen and sulfur doped fullerenes were studied in detail. The second approach involved examining the stoichiometry and effect of preparative conditions on the behavior of alkali, alkaline earth, lanthanide and mixed ion fullerides. In particular, the authors have elaborated on a technique for making such salts using liquid ammonia or aliphatic amines as solvents. Thirdly, modeling studies were undertaken to predict the properties of heterohedral fullerines and metal - C60 complexes, and theoretical guidelines were developed for understanding the reactivity of the fullerene cage to common ...

International Nuclear Information System (INIS)

By means of the light microscopy and by the measurement of the mechanical properties one investigated into the phase composition and the properties of Al-Mg-Ce and Al-Mg-Y system alloys. One plotted the isothermal cross sections of the mentioned systems under 430 and 275 deg C temperatures at up to 16% magnesium concentration and up to 0.7% yttrium concentration. One determined the yield limit and strength, the relative elongation of Al-Mg base hardened and deformed alloys containing 7.0-9.9% Mg and Ce, Y, Mn, Zr dopes upon ageing under 175, 200, 250 and 300 deg C temperatures within the ageing time ensuring the hardening maximum effect

International Nuclear Information System (INIS)

The spectroscopic properties of Pr"3"+ doping two lanthanum chlorotungstate hosts: the orthorhombic LaWO4Cl (1-1) and the hexagonal La3WO4Cl6 (3-1), as well as those of PrWO4Cl and Pr3wO613 have been investigated. The simulations of the energy level schemes are carried out within the crystal field theory frame. Each simulation involves 7 free ion parameters and 14 non-zero crystal field parameters (cfps), corresponding to the C_s point symmetry of the site occupied by the rare earth, in both structures.

Environmental Research Database

ObjectivesFor thermoelectricity both low thermal conductivity and high electrical conductivity are required. High electrical conductivity should be established via a high carriers concentration and a high mobility.~%~The aim of this feasibility study is to investigate a method of modulation doping of Si nanowires in order to generate high carrier concentrations without the need for impurity doping, thus retaining high mobilities.~%~~%~The objectives are (in chronological order):~%~- reduction of the wire [continued...]DescriptionIn recent years, the increasing dependence of society on fossil fuels for socio-economical development has become a cause of great concern. The possibility of a reduced availability of fossil fuels, and the effect of these fuels on climate change, have encouraged research into alternative energy sources. Many of these alternatives are old ideas, implemented using modern techniques. This proposal plans ...

Energy Technology Data Exchange (ETDEWEB)

The spectroscopic properties of Cr{sup 2+}, Co{sup 2+}, and Ni{sup 2+}-doped single crystals of ZnS, ZnSe, and ZnTe have been investigated to understand their potential application as mid-IR tunable solid-state laser media. The spectroscopy indicated divalent Cr was the most favorable candidate for efficient room temperature lasing, and accordingly, a laser-pumped laser demonstration of Cr:ZnS and Cr:ZnSe has been performed. The lasers` output were peaked at {approximately} 2.35 {mu}m and the highest measured slope efficiencies were {approximately} 20% in both cases.

Energy Technology Data Exchange (ETDEWEB)

A previous note reviewed methods for the paramagnetic doping of materials for spin-polarized solid targets and some of the history of attempts to apply those methods to hydrocarbons. Since the earlier work on hydrocarbons had yielded, at best, rather mediocre results, that note also speculated on some ways to extend and, possibly, to improve upon the earlier work. The sharpest focus was on the light (number of carbons less than six) alkanes, since these are the hydrocarbons that have the highest hydrogen contents ([approx gt] 17wt %) and therefore require the least degree of polarization to be interesting. This present note summarizes the subsequent work done, to date, exploring some of the issues related to the chemical doping method. The main areas of progress have been in the literature search, experimental results on glass formation by alkanes, and a polarizing test of a prototype'' hydrocarbon.

British Library Electronic Table of Contents (United Kingdom)

Dopant-free Bi2Ti2O7 thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV?Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La3+ ions can act as a stabilizer of Aurivillus phase BLT and a grain?growth inhibitor in BLT thin films.

International Nuclear Information System (INIS)

Silica glasses containing Pr"3"+ with and without CdS nanoparticles were prepared by sol-gel technique. The influence of CdS nanoparticles on Pr"3"+ doped glass was studied by absorption, photoluminescence and up-conversion. From the measured intensities of various absorption bands of these glasses, the Judd-Ofelt parameters ?_2, ?_4 and ?_6 have been evaluated. The radiative transition probability (A), radiative lifetime (?_R), branching ratio (?_R) and integrated emission cross-section (?_P) were calculated from excited states of "3P_1 and "3P_0 levels. The up-conversion emissions were found in the green, orange and red regions under 800 nm excitation with peaks 559, 612 and 688 nm respectively. On excitation with 370 nm also leads to similar green, orange and red regions.

CERN Document Server

Effect of a planar texture quality and its thickness on lasing spectrums and thresholds in dye-doped cholesteric liquid crystal (CLC) of steroid type is explored. Transition from the qualitative planar texture to the poor texture quality is accompanied by change of characteristic mode structures and by shift of barycentre in the long-wave side and the considerable growth of the lasing threshold. It is found that in the CLC texture created by substrates with perpendicular directions of orientation the stable single-mode lasing takes place. The nature of oscillated modes in such texture is caused by phase jump. The gained results show that in steroid CLC, unlike induced one, lasing spectrums is possible to feature with the coupled wave model. Key words: steroidal cholesteric liquid crystal, distributed feedback lasing, oscillation thresholds, phase defect of periodical structure, transmission and lasing spectra

Energy Technology Data Exchange (ETDEWEB)

We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy){sub 3}{sup 2+} and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy){sub 3}{sup 2+}-doped silica nanoparticles and Au nanoparticles. UV-vis absorption spectroscopy, scanning electron microscopy (SEM), cyclic voltammetry and ECL were used to characterize the uniform growth of the multilayer film. Since Ru(bpy){sub 3}{sup 2+} could still maintain its ECL property when doped into the silica nanoparticles, the as-prepared multilayer film could be used as an effective ECL sensor, and the sensor showed high sensitivity and good stability.

British Library Electronic Table of Contents (United Kingdom)

We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy)32+ and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy)32+-doped silica nanoparticles and Au nanoparticles. UV-vis absorption spectroscopy, scanning electron microscopy (SEM), cyclic voltammetry and ECL were used to characterize the uniform growth of the multilayer film. Since Ru(bpy)32+ could still maintain its ECL property when doped into the silica nanoparticles, the as-prepared multilayer film could be used as an effective ECL sensor, and the sensor showed high sensitivity and good stability.

Energy Technology Data Exchange (ETDEWEB)

Internal friction of amorphous Pd/sub 80/Si/sub 20/ metal doped with hydrogen or deuterium was measured with a specially designed apparatus using amorphous metal sheet as a part of the electric oscillating circuit. Two peaks in Q/sup -1/ curve are observed. Applying the peak shift method to the first Snoek-like peak, we can determine the relaxation time from which the microdiffusion coefficient can be calculated. The obtained microdiffusion coefficient is about 10/sup -14/ m/sup 2//s at 200 K, being comparable with the macrodiffusion coefficient obtained from the releasing method. It can, however, not elucidate the hydrogen isotopic effect on the peak temperature of Q/sup -1/ curve, the activation energy for relaxation and the relaxation time from the present work because of the broadness of obtained Q/sup -1/ curve.

British Library Electronic Table of Contents (United Kingdom)

This paper presents the corrosion inhibition performance of soluble self-doped copolymers of aniline and 4-amino-3-hydroxy-naphthalene-1-sulfonic acid synthesized by chemical oxidative polymerization method. The corrosion inhibition behaviour of the copolymers in 1.0M HCl has been evaluated using Tafel Extrapolation method and electrochemical impedance spectroscopy (EIS) which was also used to propose the mechanism besides surface morphology. The results showed that the copolymer film exhibited the significant shifting in the corrosion potential and greater charge transfer resistance. The corrosion inhibition efficiency was found to increase from 50% to 90% by increasing the concentration of copolymer from 10 to 70mg/l in HCl medium. Moreover, the copolymer showed the larger degree of surf...

Science.gov (United States)

We report significant enhancement in superconducting properties of yttrium substituted Ce1-xYxOFFeAs superconductors. The polycrystalline samples were prepared by two step solid state reaction technique. X-ray diffraction confirmed tetragonal ZrCuSiAs structure with decrease in both a and c lattice parameters on increasing yttrium substitution (with fixed F content). With smaller ion Y in place of Ce, the transition temperature increased by 6 K. Yttrium doping also lead to higher critical fields as well as broader magnetization loops, particularly at elevated temperature.