International Nuclear Information System (INIS)

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO_x) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO_x shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO_x nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO_x shell acts as an effective insulating layer. The ZnTe-SiO_x nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

CERN Document Server

Deep donor states of muonium in silicon and germanium (status report exp SC81)

International Nuclear Information System (INIS)

The variation in the superconducting properties of various binary alloys of transition metal-germanium systems was surveyed by studying sputter deposited samples prepared under various conditions. The primary interest has been to study the formation of the stoichiometric A-15 compounds T_3Ge.

Science.gov (United States)

An experimental study of H-air counterflow diffusion flames (CFDFs) is reported. Coaxial tubular

Energy Technology Data Exchange (ETDEWEB)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

Energy Technology Data Exchange (ETDEWEB)

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In an earlier publication we considered acceleration of plasma rings (Compact Torus). Several possible accelerator configurations were suggested and the possibility of focusing the accelerated rings was discussed. In this paper we consider one scheme, acceleration of a ring between coaxial electrodes by a B/sub theta/ field as in a coaxial rail-gun. If the electrodes are conical, a ring accelerated towards the apex of the cone undergoes self-similar compression (focusing) during acceleration. Because the allowable acceleration force, F/sub a/ = kappaU/sub m//R where (kappa < 1), increases as R/sup -2/, the accelerating distance for conical electrodes is considerably shortened over that required for coaxial electrodes. In either case, however, since the accelerating flux can expand as the ring moves, most of the accelerating field energy can be converted into kinetic energy of the ring leading to high efficiency.

International Nuclear Information System (INIS)

Germanium coordination compounds (GCC) with oxiethilidendyphosphonic acid (Ge-Oedph) film structures electrophysical, optical, structural and adsorptive properties investigation results are represented. This structure concerns to a new perspective class of functional materials. The mechanism GCC films electric conductivity is investigated and explained. GCC possible application fields are specified.

Energy Technology Data Exchange (ETDEWEB)

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

International Nuclear Information System (INIS)

Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ion dose of 3x10"1"3 ion/cm"2. ...

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

Energy Technology Data Exchange (ETDEWEB)

A continuous gas laser may be operated reliably with an increased pressure level and current level without significant cathode sputtering. This increases the service life and the specific power of the laser. The design eliminates the formation of arcs in operational conditions, which also has a positive influence on laser operation. The proposed laser is used successfully in modern interferometry, in geodesy and in materials analysis. The laser design is characterized by the presence of separation rings inside the coaxial cathode. The separation rings are fastened to the anode. The anode is a perforated tube that is connected to two final protective rings. Electrodes from the housing pass through the final rings. In order to increase laser power, two or more lasers of such design are used and are positioned on the same axis in a single housing.

Energy Technology Data Exchange (ETDEWEB)

The preliminary design of a far-infrared free-electron laser with a Coaxial Hybrid Iron (CHI) wiggler is presented. The CHI wiggler consists of a central rod and outer ring of alternating ferrite and dielectric spacers. A periodic wiggler field is produced when the CHI structure is immersed in an axial magnetic field. The design under investigation makes use of 1A, 1MV annular electron beam interacting with the TE{sub 01} coaxial waveguide mode at approximately 1 THz ({lambda} = 300 {mu}m). The nominal wiggler period is 0.5 cm and the inner and outer waveguide radii are 0.4 and 0.8 cm, respectively. An axial guide field of 5-10 kG is used. The device performance is modeled with slow-time-scale nonlinear code. Self fields and axial velocity spread are included in the model. Theoretical results will be presented.

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology for the neutron ...

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power ...

International Nuclear Information System (INIS)

In general there are actually two different types of A-15 compounds (A_3B) whose superconducting properties depend on whether the B atoms are transition elements (s-d type) or nontransition elements (s-p type). The properties in which the s-d type superconductors show marked differences in behavior from the s-p type include: (1) stoichiometry and range of composition, (2) the strong influence of N(O) on the stability and T/sub c/ of the phase, and (3), the effect of composition and atomic ordering on the T/sub c/ of the phase. These differences are discussed and a conclusion presented.

Energy Technology Data Exchange (ETDEWEB)

This device has and head-race pipe with an external part and a coaxial inner part. A measuring head is mounted movable between these 2 parts and has at least a thermocouple and a mobile grid for varying the section and the sodium flow to facilitate the impurities dissolution. This ensemble is completed by a longitudinal body containing the main parts of the indicator and surrounded by a thermal exchanger to cool the sodium.

Energy Technology Data Exchange (ETDEWEB)

A centering device for casing tubings is proposed. It includes a housing, collar made of copper linings, return springs and pusher with centering pins placed in it. In order to simplify the design of the centering device it is equipped with levers installed on the pusher rod and connected by hinges to one another. The centering device assures coaxial placement of tubes over the mouth of wells and installation of butt joints during welding of tubes.

International Nuclear Information System (INIS)

Results of experimental investigation into radiation electromagnetic effect (REM) in samples of germanium crystals under approximately 40 MeV #alpha#-particle irradiation in a cyclotron are presented. A high level of excitation, volumetric character of generation of non-equilibrium carriers and formation of defects as well as the form of their spatial distribution are shown to result in some peculiarities of the EMF of the REM effect on the particle flux, fluence and sample parameters. Agreement of theoretical calculations, conducted with account of specificity of #alpha#-particle interaction with a crystal, and experimental data is obtained. It is revealed that the REM effect can be applied in obtaining data on spatial distribution of non-equilibrium carrier concentrations along the particle trajectory in the crystal.

International Nuclear Information System (INIS)

"1"0"1Mo is an important radionuclide to determine the burn-up of nuclear fuels, but its half-life reference values had marked differences. It is described in detail the principles and processes of the position normalization method by two high purity germanium detectors to determinate the half-life of "1"0"1Mo. (authors)

International Nuclear Information System (INIS)

A 750 J plasma coaxial accelerator is used to produce plasma using air at 0.2 torr pressure and 8 kv charging voltage. The discharge current and voltage traces showed that the total circuit inductance was about 1750 ?H. The experimental results showed that the plasma sheath reached the muzzle after 6 ?s with velocity equal to 4 cm/?s, after then it decreased, while the simulation model showed that the plasma sheath reaches the muzzle with velocity of 3 cm/?s and after one microsecond it increases to reach about 4 cm/?s after 12 ?s then it decreased. The plasma temperature measurements showed that the plasma sheath reached the muzzle with temperature of about 9 eV and increase to reach about 12 eV after 8.5 ?s then after it decrease. The simulation model showed that the plasma temperature at the muzzle is about 10.5 eV and continue to increase to reach 17.5 eV after 12 ?s then it decrease.

Energy Technology Data Exchange (ETDEWEB)

This patent describes an automatic loading roller for transmitting torque in traction drive devices in manipulator arm joints includes a two-part camming device having a first cam portion rotatable in place on a shaft by an input torque and a second cam portion coaxially rotatable and translatable having a rotating drive surface thereon for engaging the driven surface of an output roller with a resultant force proportional to the torque transmitted. Complementary helical grooves on the respective cam portions interconnected through ball bearings interacting with those grooves effect the rotation and translation of the second cam portion in response to rotation of the first.

Energy Technology Data Exchange (ETDEWEB)

A billet of low-density carbon-bonded carbon fiber (CBCF) composite is machined into a desired attenuator or load element shape (usually tapering). The CBCF composite is used as a free-standing load element or, preferably, brazed to the copper, brass or aluminum components of coaxial transmission lines or microwave waveguides. A novel braze method was developed for the brazing step. The resulting attenuator and/or load devices are robust, relatively inexpensive, more easily fabricated, and have improved performance over conventional graded-coating loads.

Energy Technology Data Exchange (ETDEWEB)

Conductivity and Hall effect measurements were made in dark and IR-photoexcited p-type ZnTe samples between 77 and 300 K. Acceptor vacancy complexes of activation energies 0.09-0.1 eV were found to be present in the photoexcited samples. Different possible scattering mobilities were considered for both samples to explain the observed hole mobility. In the photoexcited sample a scattering mobility due to vacancy complexes was suggested for the first time to explain the results. The scattering centres were associated with native vacancy complexes segregated at the dislocations sites. The expression for the complex scattering mobility has been deduced using the curve fitting method to be {mu}{sub C}=(6.6x10{sup -11})T{sup 5} e{sup 725/T}. (orig.).

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

International Nuclear Information System (INIS)

The reactive evaporation process was successfully used to deposit films of the A-15 Nb_3Ge phase. This is the first report, to the best of our knowledge, illustrating the use of such processes for the deposition of A-15 compounds. In this process, niobium vapors from an electron-beam-heated evaporation source react with germane gas introduced into the vacuum chamber at low partial pressures (approximately 10"-"4 Torr) to produce Nb_3Ge deposits. The process variables studied were the deposition temperature, the niobium-to-germanium impingement ratio on the substrate and the plasma-enhanced deposition, in this case the activated reactive evaporation process. At low deposition temperatures (below 450"0C) the deposit is amorphous (or microcrystalline) and can be crystallized to the Nb_3Ge phase by heat treatment, e.g. at 850"0C for 1 h in vacuum. The ratio of niobium to germanium in the deposit can be varied by changing the process parameters. The ...

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

International Nuclear Information System (INIS)

The description is presented of binary phase diagrams of titanium alloyed with the following elements: silver, aluminium, arsenic, gold, boron, barium, beryllium, bismuth, carbon, calcium, cadmium, cobalt, chromium, copper, iron, gallium, germanium, hydrogen, hafnium, indium, iridium, potassium, lithium, magnesium, manganese, molybdenum, nitrogen, sodium, niobium, nickel, oxygen, osmium, phosphorus, lead, palladium, platinum, plutonium, rhenium, lanthanium, cerium, preseodymium, neodymium, gadolinium, erbium, terbium, thulium, lutetium, rhodium, ruthenium, scandium, silicon, tin, strontium, tantalum, technetium, thorium, uranium, vanadium, tungsten, yttrium, ytterbium, zinc and zirconium.

British Library Electronic Table of Contents (United Kingdom)

Metalloid cluster compounds of group 14 of the general formulae EnRm with n > m (E = Si, Ge, Sn, Pb; R = ligand), where naked as well as ligand bound tetrel atoms are present, represent a novel class of cluster compounds in group 14 chemistry and can be seen as intermediates on the way to the elemental state. Therefore, interesting properties are expected for these compounds, which might complement results from nanotechnology. In this article, first results for germanium are discussed, together with novel build-up reactions on the way to novel materials based on metalloid cluster compounds. GRAPHICAL ABSTRACT[image omitted

Energy Technology Data Exchange (ETDEWEB)

In this article, a method of producing elastic ferromagnetic composite containing particles of chemical pure iron with sizes of 0.10-0.15 mm was described. The particles were dispersed in an elastic matrix of an elastic silicone rubber. The filling factor of composite by ferromagnetic particles and porous factors were changed in the range from 0.15 to 0.45. The samples of the obtained composite were placed in the magnetic field with induction of 0-8 T, produced by the Bitter-type magnet. The longitudinal magnetostriction of samples was measured by using a coaxial capacitor with a movable plate. It was found that the maximal relative elongation of samples was 4.81% and hysteresis of magnetostriction and also remanent magnetostriction amounted to 1.08%. A slow decay of remanent magnetostriction up to 0.14% in 10{sup 5} s was also observed.

International Nuclear Information System (INIS)

Measurements have been made of certain parameters relevant to the operation of electron-counting detectors. An experimental chamber consisting of a uniform-field drift tube and a coaxial proportional counter thas been employed to obtain data, at very low drift fields (E/p<0.02 V/cm Torr), on electron mobility and lifetimes in a range of gas mixtures. These mixtures included argon, methane, nitrogen and carbon dioxide. Measurements of single-electron spectra showed that, unexpectedly for the standard gas mixtures employed, useful departure from an exponential spectrum was not possible without the production of cathode secondaries. Although the present studies employed only the counter electrical signal the information obtained should be directly relevant to the operation of practical light-pulse systems. Examples of electron-counting spectra for soft X-rays are shown. (orig.).

International Nuclear Information System (INIS)

The dependence of the efficiency of a coaxial IGC-30 Ge detector on the direction of gamma quanta entry, their energy and the distance from the source is examined. A set of point sources QCR-2 (Amersham, UK) has been used which is arranged consecutively in two perpendicular planes passing through the detector axis, at a distance of 0.1 - 1.3 m (pace 0.1) from its geometric centre for 16 different angles in every plane. Dependence curves of the efficiency on the angle of gamma-quanta hits are obtained for energies 60, 81, 122, 356, 662, 834, 1173 and 1332 keV. Changes in efficiency connected with spatial dividing ability are found out. Using the least squares' method the expected spatial distribution of efficiency is examined with a level of authenticity P > 0.9. The possible causes for the efficiency change and its possible effect on the measurements' precision are discussed. (author).

British Library Electronic Table of Contents (United Kingdom)

Electrostatic separation has already proved to be an effective means for the recycling of granular plastics from industrial wastes. The aim of the present work was to optimize the operation of a novel device that could ensure effective triboelectric charging of such materials prior to their selective sorting in a high-intensity electric field. The experiments were performed on two sorts of mm-size granular materials Acrylonitrile Butadiene Styrene and High Impact Polystyrene, originating from the processing of waste electric and electronic equipment. The samples were introduced in a Polyvinyl Chloride cylinder, where a co-axial propeller entrained the plastic granules into a helical motion that favored their triboelectric charging by combining the mechanical and aerodynamical effects. The ...

International Nuclear Information System (INIS)

Engineering details of a high voltage driven corona-plasma ozone generator are described. The plasma diode of generator has coaxial cylindrical geometry with cathode located inside anode. Cathode is made of a large number of radial gas nozzles arranged on central tubular mast which admits oxygen gas. The sharp endings of the nozzles along with a set of corona rings create the high electric field at the cathode required for formation of dense corona plume responsible for O_3 evolution. A model of coronal plasma generation and ozone production is presented. The plasma formation is strongly dependent on the electric field and temperature in side diode where a high electron density in a low temperature negative corona is suited for high ozone yields. These are established by suitable regulation of A-K gap, voltage, oxygen pressure, and cathode-nozzle population.

Science.gov (United States)

The decomposition of three ?-lactam antibiotics (amoxicillin, oxacillin and ampicillin) in aqueous solution was investigated using a dielectric barrier discharge (DBD) in coaxial configuration. Solutions of concentration 100 mg/L were made to flow as a film over the surface of the inner electrode of the plasma reactor, so the discharge was generated at the gas-liquid interface. The electrical discharge was operated in pulsed regime, at room temperature and atmospheric pressure, in oxygen. Amoxicillin was degraded after 10 min plasma treatment, while the other two antibiotics required about 30 min for decomposition. The evolution of the degradation process was continuously followed using liquid chromatography-mass spectrometry (LC-MS), total organic carbon (TOC) and chemical oxygen demand (COD) analyses. PMID:21514950

Energy Technology Data Exchange (ETDEWEB)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the ...

Energy Technology Data Exchange (ETDEWEB)

Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

Energy Technology Data Exchange (ETDEWEB)

Inverted annular flow can be visualized as a liquid jet-like core surrounded by a vapor annulus. While many analytical and experimental studies of heat transfer in this regime have been performed, there is very little understanding of the basic hydrodynamics of the post-CHF flow field. However, a recent experimental study was done that was able to successfully investigate the effects of various steady-state inlet flow parameters on the post-CHF hydrodynamics of the film boiling of a single phase liquid jet. This study was carried out by means of a visual photographic analysis of an idealized single phase core inverted annular flow initial geometry (single phase liquid jet core surrounded by a coaxial annulus of gas). In order to extend this study, a subsequent flow visualization of an idealized two-phase core inverted annular flow geometry (two-phase central jet core, surrounded by a coaxial annulus of gas) was carried out. The objective of ...

International Nuclear Information System (INIS)

The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.

Energy Technology Data Exchange (ETDEWEB)

Elemental analysis of some medicinal plants used in the Indian Ayurvedic system was performed by employing instrumental neutron activation analysis (INAA) and atomic absorption spectroscopy (AAS) techniques. The samples were irradiated with thermal neutrons in a nuclear reactor and the induced activity was counted by gamma ray spectrometry using an efficiency calibrated high resolution high purity germanium (HPGe) detector. Most of the medicinal plants were found to be rich in one or more of the elements under study. The variation in elemental concentration in same medicinal plants samples collected in summer, winter and rainy seasons was studied and the biological effects of these elements on human beings are discussed. (orig.)

International Nuclear Information System (INIS)

We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.

International Nuclear Information System (INIS)

The separation and the mechanism of retention of ion associates of #alpha#-isomers of molybdic and tungstic heteropoly acids (HPA) of phosphorus(5), silicon(4), and germanium(4) with trioctylamine (TOA) on a column (80x3 mm) packed with Diasorb-130-CN (8 #mu#m) were studied in a flow of chloroform-tetrahydrofuran (THF) and chloroform-n-butanol-TOA mixtures with spectrophotometric detection at 320 nm. It is demonstrated that the adsorption of all the studied ion associates proceeds through the displacement THF molecule from the surface of the stationary phase and without the displacement of TOA molecules. Conditions for the separation of phospho- and silicomolybdic HPA and also phospho- and germanolybdic HPA were found. The chromatographic system using silica gel modified with nitrile groups as the stationary phase is of higher selective than that using ummodified silica gel.

International Nuclear Information System (INIS)

From their genesis by weathering and sedimentation, bauxites, the principal aluminium ores, contain appreciable amounts of uranium and thorium. High resolution gamma spectrometry with a high purity germanium detector was used for an analysis of four industrially used bauxites from Gondama, Sierra Leone; Boke, Guinea; Weipa, Queensland, Australia; Gove, Northern Territory, Australia. Significant differences in uranium to thorium ratios and in activities of the uranium and thorium daughters were observed for the four bauxites. It was found that the bauxite from Gondama, Sierra Leone has an activity of only 10% compared with the others. Red mud tailings from such a bauxite may well be used as an additive to bricks, which is now illegal for normal red mud from more active bauxites. (author).

Energy Technology Data Exchange (ETDEWEB)

Leafy samples often used as medicine in the Indian Ayurvedic system and vegetables were analyzed for 20 elements (As, Ba, Br, Ca, Ce, Cr, Cs, Co, Eu, Fe, K, La, Na, Rb, Sb, Sc, Sm, Sr, Th, Zn) by employing Instrumental Neutron Activation Analysis (INAA). The samples were irradiated at the 100 kW TRIGA-MAINZ nuclear reactor and the induced activities were counted by gamma ray spectrometry using an efficiency calibrated high resolution High Purity Germanium (HPGe) detector. The concentration of the elements in the medicinal and vegetable leaves and their biological effects on human beings are discussed.

Energy Technology Data Exchange (ETDEWEB)

The concentrations of {sup 137}Cs and {sup 134}Cs in Malaysian marine sediments were measured by gamma-ray spectrometry with a high-purity germanium (HPGe) detector connected to a multichannel analyzer. In general, the {sup 137}Cs concentration in Malaysian marine sediments has been found to be very low and less than 5 Bq/kg dry weight with the exception of those from a few sampling locations. The concentration of {sup 134}Cs was found to be less than the minimum detectable activity for the measuring condition used. Data reported in this paper were found to be comparable with results from within the region and thus can be used as reference data for the country.

Energy Technology Data Exchange (ETDEWEB)

An original device and a method of its application for restoring of the function of relatively incompetent valves (both patented) are elaborated. Application of the new device allows to lower the difficulty of surgical treatment, to decrease the duration of operation and post-operative period. The long-term results of six-year long experience of its application are presented. The patients examination after 2,5-3,0-year post-operation period shows perfect vein valve correction. A device for stone extraction from tubular organs (patented) fabricated with titanium nickelide superelastic alloy is presented. The new suggested design is free of the drawback inherent in the previous one. The working element of the device is formed as a truncated cone or a truncated cone coaxial with the cylinder (the previous design was formed as a full cone) that prevents overstraining and residual strain accumulation during the manipulation process. Since the first publication the ...

International Nuclear Information System (INIS)

Certain postulated faults during refuelling of AGRs may give rise to compacted fuel and graphite sleeve debris. This debris must be maintained below some safe limiting temperature. As part of a programme to assess the benefits of natural convection in cooling such debris in a region experiencing no forced cooling, a simple geometry incorporating typical debris has been studied both experimentally and by prediction. The experiment comprised an array of electrically heated fuel rods mounted co-axially in a closed cylindrical vessel and surrounded by fragments of graphite. The vessel was cooled on its cylindrical surface, the ends being insulated. Rods and vessel wall were thermocoupled. Tests covered a range of temperature and pressures in both CO_2 and N_2. Significant natural convection heat removal was demonstrated, particularly at high pressure. Predictions utilising the PHOENICS code agreed well with measured temperatures over a wide range of test conditions. ...

Energy Technology Data Exchange (ETDEWEB)

Limitations of traveling wave relaying schemes for protection of overhead extra-high voltage transmission lines are investigated. A method of analysis of traveling wave phenomena for three phase transmission lines is developed in which the interdependent phase voltages and currents are decoupled into their modal counterparts, which are approximately independent. A time domain digital simulation program is used to solve the modal transmission line equations to obtain the fault induced traveling waves detected at the relay location. The frequency dependence of the aerial modes is ignored but their losses are included. A lumped element analysis method, originally developed for transient analysis of lossy coaxial cables, is adapted here to obtain approximate solution for the fault induced traveling waves of the ground mode. Excellent agreement is found between the results obtained by this method and frequency domain methods. This time-domain method offers more ...

International Nuclear Information System (INIS)

We have studied the efficiency of ozone production by pulsed positive corona discharge in coaxial wire-cylinder geometry at atmospheric pressure. A corona discharge was generated by short (#approx#150 ns) high voltage pulses applied between a silver coated copper wire anode and stainless steel cylinder cathode in synthetic air. A pyrex probe and Teflon tube was used for collecting discharge products and an ozone concentration was monitored outside of the discharge chamber by a non-dispersive UV absorption technique. The production of ozone was investigated as a function of energy density (10"-"4-3x10"-"1 Wh l"-"1) delivered to the discharge volume by combining the discharge frequency (0.1-10 Hz) and airflow rate (1-32 l min"-"1). From ozone concentration measurements we have evaluated the ozone production, yield and production energy cost. The ozone production yield and cost vary in the range of 15-55 g kWh"-"1 and 35-110 eV/molecule. (author)

Energy Technology Data Exchange (ETDEWEB)

The purpose of this study is to identify the radiative heat transfer augmentation by a coaxial cylinder introduced in the infinite cylindrical pipe enclosing a participating gas. The gas is either a mixture of water vapor and carbon dioxide or gray. The gas is assumed to be homogeneous at a constant temperature, and has a refractive index of unity. All of the surfaces are opaque and gray, diffusely emitting and reflecting at a constant temperature. The effect of system diameter, diameter ratio, wall emittances, gas and surface temperatures, mixture component on heat transfer augmentation are studied by using the zone method with participating gas radiative properties evaluated from the weighted sum of gray gases model. From the radiative equilibrium condition, the installed wall temperature is formulated and calculated by the iteration method. If the medium is a gray gas, the augmentation observed are negligible. For the range of values studied for a real gas, if ...

Energy Technology Data Exchange (ETDEWEB)

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

International Nuclear Information System (INIS)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

Science.gov (United States)

We report on the formation of current blocking regions by O2 plasma treatment to reduce current crowding at the active region above the p-type electrodes of GaN-based vertical light emitting diodes (LEDs). The forward voltage and reverse current (at -5 V) of the plasma-treated LEDs slightly increase with increasing aging time. The output power (at 350 mA) of the plasma-treated LEDs is enhanced by 26% as compared to that of reference LEDs and is comparable to that of LEDs with SiO2 current blocking layers. It is shown that the output power (at 700 mA) of the plasma-treated LEDs is degraded by less than 2% of the initial value after 500 h.

International Nuclear Information System (INIS)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

International Nuclear Information System (INIS)

The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

Energy Technology Data Exchange (ETDEWEB)

The effect of powder particle sizes of n- and p-Bi2Te3 on the thermoelectric properties has been studied. The powder was formed from the each ingot and sieve into <63, 63-90 and 90-150{mu}m for p-type, and <355 and >355 {mu}m for n-type. Those powders are pressed followed by CIP, then sinterd at 773K for S. Effects of CIP on the densities were not so large such as 1-4% depending on the powder sizes. The Setback coefficients and electric conductivities for p-type were 110{mu}V/K and 0.8{times}10{sup 2}ohm{sup -1}m{sup -1} at 333K, while 18O{mu}V/K and 2.0{times}10{sup 4}ohm{sup -1}m{sup -l} for n-type, respectively. The thermal conductivity for n-type was 0.7W/mK leading to the figure of merit of 2.1{times}10{sup -3}(/K). The hybrid texture of the suitable amount of smaller and larger grains has a possibility of an improvement for thermoelectric properties. 10 refs., 5 figs., 5 tabs.

Energy Technology Data Exchange (ETDEWEB)

When a highly collimated beam of particles is aimed along the atomic rows of an aligned single crystal, the averaging effect of high speed motion results, to the lowest order of approximation, in crystal electric fields which are transverse to the atomic rows. The enormous magnitude of the crystal transverse electric fields is unsurpassed by any other known earth-bound macroscopic sources. For example, the field strengths along the <100> axis of tungsten at 77 K approach 9{center dot}10{sup 13}V/m. Thus quantum electrodynamic (QED) processes in strong fields which are thought to occur only in the extra-terrestrial environment can now be investigated in the laboratory. Here we review the results of measurements performed at the SPS facility in CERN using highly collimated beams of electrons, positrons and photons in the 20-200 GeV range, and germanium crystals cooled to 77 K with thicknesses ranging from 0.07 mm to 1.40 mm. The focus is on the simplest ...

International Nuclear Information System (INIS)

The optical properties and microstructure of germanium (Ge) films, prepared by ion-assisted deposition (IAD) process, were investigated. The Ge films were deposited on sapphire and silicon substrates, with and without simultaneous Ar+ bombardment. Higher index films, with a refractive index 7.7% larger than that of the single crystalline Ge wafer, were obtained with the IAD process. The density of the IAD film could be 1.5% greater than that of the e-beam film. The results of the heat treatment indicated that the optical and structural properties of the IAD films were more stable. Ge nano-crystallites could be observed under high ion power density, which induced a crystalline structure in the Ge thin films. The average size of the nano-crystallites, as determined from both the X-ray diffraction data and the transmission electron microscopy images, showed that no systematic change had occurred. The results presented in this work suggest that the optical and ...

International Nuclear Information System (INIS)

The half-life of "1"0"9Cd was measured by following the decay of sources from a radiochemically pure solution with two different measuring systems: an ionisation chamber and a high-purity germanium (HPGe) detector. The measurements were performed over a period of 3.6 years, i.e. about 2.8 half-lives of "1"0"9Cd. The resulting half-life values and detailed uncertainty budgets (k=1) are presented for both systems. The result obtained with the ionisation chamber, 462.36 (33) days, and the one obtained with the HPGe detector, 461.92 (76) days, are mutually consistent. The weighted mean of our measured values, T_1_/_2("1"0"9Cd)=462.29 (30) days, is consistent with the currently recommended values of 461.4 (12) days and 462.0 (3) days. From a set of selected experimental values published after 1970, a 'partially weighted mean' of T_1_/_2("1"0"9Cd)=462.36 (39) days was calculated. More measurements are needed to resolve the discrepancies among literature data and to ...

Science.gov (United States)

The relationship between processing, microstructure, and properties was studied for A-15 compounds in multifilamentary composites produced by solid-state diffusion and in thin-film samples produced by vapor deposition. Grain sizes of A-15 superconducting compounds were measured by transmission electron microscopy of multifilamentary composites reacted at various temperatures. Critical current densities at 4.2 K and fields up to 6 T were found to be similar for niobium-tin, vanadium-gallium, and vanadium-silicon of the same grain size. Study of the Cu-V-Si phase diagram led to the production of improved multifilamentary vanadium-silicon conductors. The effects of various alloying elements on A-15 layers produced by solid-state diffusion were studied. The most promising new observation was that tantalum can be incorporated into niobium-tin reaction layers, leading to an enhancement of critical currents at high fields. The critical temperature of vapor-deposited, ...

International Nuclear Information System (INIS)

We have studied the correlation between the chemical state and the oxygen-sensing properties of an iron oxide thin film using a setup that allows simultaneous sensor resistance measurements and X-ray photoelectron spectroscopy (XPS) data acquisition. The gas exposures were performed at the highest operating pressure of the XPS spectrometer at a controlled sample temperature which allows direct comparison between the sensor response and the chemical state of the surface. The iron oxide film was modified by a sequence of argon ion sputtering steps and the induced changes in the chemical state, resistance, and sensitivity to oxygen were investigated. The sputtering was found to reduce the iron from the Fe"3"+ to the Fe"2"+ state and to decrease the sensor resistance. The measured sensitivity to oxygen first increased by a factor of two but then collapsed to its original level. The mechanism for oxygen sensing was found to be filling of the oxygen vacancies in the lattice. The effect of ...

British Library Electronic Table of Contents (United Kingdom)

The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron diffraction patterns verified that bulk porous silicon is still a ...

Energy Technology Data Exchange (ETDEWEB)

Techniques for fabricating P-type (Cu,Ag)/sub 2/Se with mesh-type bonds have been developed and are being evaluated for long-term use. In addition, methods for reducing vapor suppression by the use of coatings and/or baffling continue to show gains. The N-type alloy Gd/sub 2/Se/sub 3/ has been shown to be thermally unstable. It undergoes a sluggish cubic-to-orthorhombic phase change below 1000/sup 0/C, with an accompanying degradation in mechanical and thermoelectric properties. Fabrication studies conducted with the (Bi,Sb)/sub 2/(Se,Te)/sub 3/ alloys showed these materials to be sensitive to oxygen contamination if reproducible properties are to be obtained. Preparation of powdered material by explosive techniques was investigated. This technique appears to be useful in preparing homogeneous -325 mesh material, but it does not yield a useful amount of submicron-size powder.

Energy Technology Data Exchange (ETDEWEB)

Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5{times}10{sup 15} and 1.3{times}10{sup 17}cm{sup {minus}3}) and p-type (2.5{times}10{sup 17}cm{sup {minus}3}) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 10{sup 4} and 10{sup 5}, respectively. {copyright} {ital 1997 American Institute of Physics.}

Science.gov (United States)

A modified epitaxial design leads to straightforward implementation of short (1{lambda}) optical cavities and the use of C as the sole {ital p}-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Science.gov (United States)

Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

Science.gov (United States)

Based on a recent investigation that modeled the elastic properties (ie, strength, stiffness and range) of multistranded wires made from linearly elastic materials, three-stranded (triple) and six-stranded coaxial (coax) stainless steel (SS) wires were compared to single-stranded (single) SS and conventional nickel titanium (NiTi) leveling wires. To measure Young's modulus of elasticity (E), flexural tests were performed with an Instron mechanical testing machine in a three-point bending arrangement having a span length of 8.9 mm or 12.5 mm. A strong correlation between wire stiffness and the area moment of inertia demonstrated that strand interaction was negligible at low activations and that E = 199 GPa was constant even for the heavily drawn coax strands. Using the Instron with an extensometer, the 0.1% yield strengths (sigma(YS)) of the single SS wires and the straight inner strands within the coax wires were tested. The ratio of the sigma(YS) to the ultimate ...

Energy Technology Data Exchange (ETDEWEB)

We wanted to evaluate the long-term results of a dual expandable nitinol stent for the palliative treatment of malignant gastroduodenal strictures. The dual stent consists of two stents; an outer partially nylon covered stent and an inner bare nitinol stent. The outer stent was placed into the stricture and this was followed by coaxial placement of the inner bare stent. Using fluoroscopic guidance, dual expandable stents were placed in 86 patients with inoperable malignant gastroduodenal strictures. The technical and clinical success, the complication, survival and the stent patency were evaluated during the follow-up period. Stent placement was technically successful in 83 of the 86 patients. After stent placement, 74 of the 85 patients showed improvement of their symptoms. During the mean follow-up period of 133 days, 24 patients (28%) developed recurrent symptoms due to incomplete expansion (n=1), stent migration (n=4), food impaction (n=2), granulation tissue ...

Energy Technology Data Exchange (ETDEWEB)

Naturally Occurring Radioactive Material (N.O.R.M.) occurs in most soil and rock, and by mining and mineral processing, some of the radionuclides are significantly enhanced. An in-situ gamma-ray detector called M.E.D.U.S.A., has been used to produce a map of relative activity concentrations in a gold mine tailings dam on the Witwatersrand in South Africa. A CsI(Na) scintillation detector is used in this system. M.E.D.U.S.A. spectra obtained from the survey were analyzed using the Full-Spectrum Analysis (F.S.A.) procedure to compute the {sup 40}K, {sup 238}U and {sup 232}Th activity concentrations. The activity concentrations are used with global positioning data (G.P.S.) to produce the concentration maps. A hyper-pure germanium gamma-ray detector (Hp Ge) was used to measure gamma-rays from the naturally occurring nuclides for soil samples taken at different points on the site to calibrate the M.E.D.U.S.A. system. Radon soil gas measurements were performed at ...

Science.gov (United States)

The {ital L}{sub 2}-{ital L}{sub 3} Coster-Kronig transition probability ({ital f}{sub 23}) in Tm was measured by multiparameter {ital K} versus {ital L} x-ray coincidence techniques. The Tm x rays were obtained from a radioactive source of {sup 169}Yb and were detected with cooled germanium and silicon detectors of high-energy resolution. Corrections were applied for the contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak and for the contribution of unresolved {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak. The contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak was determined solely from the results of the coincidence measurements using a method of data analysis which was previously described elsewhere. The contribution of {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak was determined from the coincidence measurements and published values of the {ital L}{eta} to ...

Energy Technology Data Exchange (ETDEWEB)

The effect that different chemical and physical atomic environments can have on the relative intensities of radiative electron transitions from the filling of K shell vacancies was investigated. The method used involved the detection of photoionization induced X-ray fluorescence. An experimental system based on a hyper pure germanium detector (HPGE) was used to measure the relative K-L and K-M X-ray yields from the photofluorescence of a series of lanthanide elements and compounds. A background subtraction and peak integration strategy was employed which accounted for scattering in the samples and scattering of the flux from the radioisotope photoionization sources. Analysis of the data resulted in a tabulation of relative K/sub ..beta..//K/sub ..cap alpha../ X-ray intensity ratios. The measured relative K/sub ..beta..//K/sub ..cap alpha../ X-ray intensity ratios were compared to the calculated values predicted by the theoretical development of Scofield and the ...

Energy Technology Data Exchange (ETDEWEB)

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, Si-based ferromagnetic ...

International Nuclear Information System (INIS)

Modern nuclear spectroscopy boosts the study of the nuclear matter towards extreme conditions: large excitation energies, high spins, and new nuclear species with unusual ratio between the numbers of neutrons and protons. One of the 'exotic' nuclear regions, practically not studied until now, is the upper part of the N=Z line, from about N#approx#Z#approx#36 to Sn-100, probably the heaviest bound nucleus with N=Z. These nuclei lie close to the proton-drip line. Due to their special composition, it is expected that their study will reveal some phenomena which are less encountered in the nuclei studied till now. In particular, of outstanding interest is the fact that these are the only nuclei which may provide information on the properties of the neutron-proton pairing forces. In spite of its large interest, this nuclear region is exceedingly difficult to reach with the present techniques. The lecture follows the latest results and efforts in the study of the heaviest nuclei with ...

Energy Technology Data Exchange (ETDEWEB)

The INTEGRAL/SPI spectrometer was designed to observe the sky in the energy band of 20 keV to 8 MeV. The specificity of instrument SPI rests on the excellent spectral resolution (2.3 keV with 1 MeV) of its detecting plan, composed of 19 cooled germanium crystals; covering an effective area of 508 cm{sup 2}. The use of a coded mask, located at 1.7 m above the detection plan ensures to it a resolving power of 2.5 degrees. The aim of this thesis, begun before the INTEGRAL launch, is made up of two parts. The first part relates to the analysis of the spectrometer calibration data. The objective was to measure and check the performances of the telescope, in particular to validate simulations of the INTEGRAL/SPI instrument response. This objective was successfully achieved. This analysis also highlights the presence of a significant instrumental background noise. Whereas, the second part concentrates on the data analysis of the Vela region observations. I have approached ...

Energy Technology Data Exchange (ETDEWEB)

ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band after annealing at 200 {sup 0}C. A visible region emission band at ...

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping treatment. However, Mn-, Fe-, Co- or Ni-doped ZnS, ZnSe and ZnTe ...

Energy Technology Data Exchange (ETDEWEB)

This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case ...

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion ...

Energy Technology Data Exchange (ETDEWEB)

High-spin states in the mirror pair nuclei {sup 49}Cr and {sup 49}Mn and their cross-conjugate partners, the mirror pair {sup 47}V and {sup 47}Cr have been investigated using experimental {gamma}-ray spectroscopic techniques. The combination of high-efficiency EUROBALL cluster Germanium detectors and clean exit-channel gating afforded by a 31-element silicon ball used in conjunction with a 15-detector neutron wall allowed a revision and extension to the energy level schemes of all four nuclei up to J{sup {pi}}=31{sup -}/2. The difference in excitation energy between states of equivalent spin in the parent nucleus and its analogue partner have thus been established for both mirror pairs up to the f{sub 7/2}-shell band terminating state for the first time. This difference is assumed to be due almost entirely to the Coulomb effect and is therefore called the Coulomb energy difference (CED). The variation in the CED with spin has been interpreted as reflecting the ...

International Nuclear Information System (INIS)

Radiochemical results ("2"3"4U, "2"3"8U, "2"2"6Ra and "2"2"8Ra activities; "2"3"4U/"2"3"8U, "2"2"8Ra/"2"2"6Ra and "2"2"6Ra/"2"3"8U activity ratios) are reported for 31 drinking water samples collected from 8 wells, 12 hot mineral springs, 5 cold springs, and 6 tap water samples. Activities of the Ra isotopes were measured by gamma spectrometry using a low background and high efficiency well type germanium detector. The U isotopes were counted in an alpha spectrometer. The results show that "2"3"8U activity varies between 4.46 and about 308 mBq l"-"1 in wells, 0.59 and 17.88 mBq l"-"1 in hot springs, 2.19 and 3.21 mBq l"-"1 in cold springs, and between 2.5 and 15.70 mBq l"-"1 in tap water samples. "2"3"4U/"2"3"8U activity ratio is generally higher than 1 which is the equilibrium activity ratio value in closed systems. It varies in the ranges 0.79-2.11 in wells, 0.97-7.39 in hot springs, 2.53-8.30 in cold springs, and 1.14-3.35 in tap water. Unlike well waters, ...

Energy Technology Data Exchange (ETDEWEB)

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The ...