British Library Electronic Table of Contents (United Kingdom)
This paper presents the corrosion inhibition performance of soluble self-doped copolymers of aniline and 4-amino-3-hydroxy-naphthalene-1-sulfonic acid synthesized by chemical oxidative polymerization method. The corrosion inhibition behaviour of the copolymers in 1.0M HCl has been evaluated using Tafel Extrapolation method and electrochemical impedance spectroscopy (EIS) which was also used to propose the mechanism besides surface morphology. The results showed that the copolymer film exhibited the significant shifting in the corrosion potential and greater charge transfer resistance. The corrosion inhibition efficiency was found to increase from 50% to 90% by increasing the concentration of copolymer from 10 to 70mg/l in HCl medium. Moreover, the copolymer showed the larger degree of surf...
2011-01-01
Flexible, all-organic ammonia sensor based on dodecylbenzene sulfonic acid-doped polyaniline films
International Nuclear Information System (INIS)
A stable chlorobenzene dispersion of conducting polyaniline (PANI) has been obtained by doping emeraldine base with dodecylbenzene sulfonic acid (DBSA) and studied by spectrophotometric measurements in the UV-vis-IR range. The electrical properties of PANI: DBSA films obtained from the above dispersion have been investigated under different temperature and relative humidity conditions. All-organic chemoresistive devices have been developed by spin-coating the PANI: DBSA dispersion on flexible substrates, and then by depositing electrodes on the top, from a carbon nanotube conducting ink. Sensing tests performed under exposition to calibrated amounts of ammonia reveal that these simple and inexpensive sensors are able to detect ammonia at room temperature in a reliable way, with a sensitivity linearly related to concentration in the range between 5 ppm and 70 ppm.
2010-09-30
A new gene (alkB) of Escherichia coli that controls sensitivity to methyl methane sulfonate.
UK PubMed Central (United Kingdom)
Seven mutants of Escherichia coli were isolated that are sensitive to methyl methane sulfonate but not to UV light. They exhibited decreased host cell reactivation capacity for methyl methane sulfonate-treated...Full Text Available
1983-03-01
UK PubMed Central (United Kingdom)
Strong inhibitory effects of the anionic surfactant linear alkylbenzene sulfonate (LAS) on four strains of autotrophic ammonia-oxidizing bacteria (AOB) are reported. Two Nitrosospira...Full Text Available
2001-06-01
International Nuclear Information System (INIS)
Sulfonated poly(ether ether ketone) (SPEEK) membranes with various degrees of sulfonation (DS) have been prepared as a potential membrane material for proton exchange membrane by sulfonation process using mixtures of (15-30% concentration) fuming sulfuric acid and (95-98%) concentrated sulfuric acid as the sulfonating agent. The sulfonation process was conducted at room temperature by varying the acid ratio and reaction time. The produced membranes were then characterized by evaluating the ion exchange capacity (IEC), water uptake, thermal stability, proton conductivity and methanol permeability as a function of degree of sulfonation. The proton conductivity of the sulfonated PEEK membranes with various DS was within the magnitude of 10"-"3 and 10"-"2 S cm"-"1 at room temperature and the methanol permeability was in the range of 3.45 x ...
2007-07-15
On thermodynamics of ion exchange on styrene and divinylbenzene sulfonated copolymers
International Nuclear Information System (INIS)
... aromatics barium dienes heat exchangers ion exchange ions kinetic equations
Ionically conductive thin polymer films prepared by plasma polymerization
International Nuclear Information System (INIS)
Ultrathin solid polymer electrolyte membranes containing sulfonic ester groups were prepared by polymerization of methyl benzenesulfonate and octamethylcyclotetrasiloxane in a glow discharge plasma. The sulfonic ester groups of the plasma polymer were transformed to lithium sulfonate groups by treatment with lithium iodide. Hybridization of this plasma polymer containing the lithium sulfonate groups with poly(ethylene oxide) (average Mw 300) resulted in the formation of a single lithium ion conductive film. The hybrid polymer electrolyte films were about 1 #mu#m thick, pinhole-free, adherent to various substrates, and showed ionic conductivities at 60 degrees C of the order of 10"- "6 S cm"- "1 (10"2 #OMEGA# cm"2 resistance per unit area of as-prepared solid polymer electrolyte). This material shows promise for electrochemical applications such as all solid-state lithium batteries, sensors, and ...
... commercial material manufactured utilizing chlorinated hydrocarbons for the sulfonation of a long chain polystyrene to produce high ... ...
Rare Earth Doped Yttrium Aluminum Garnet (YAG ... - GLTRS - NASA
films and cylinders of rare earth doped yttrium aluminum garnets. ... We knew that yttrium aluminum garnet (YAG) could be doped with ...
Flue gas desulfurization/denitrification using metal-chelate additives
A method of simultaneously removing SO.sub.2 and NO from oxygen-containing flue gases resulting from the combustion of carbonaceous material by contacting the flue gas with an aqueous scrubber solution containing an aqueous sulfur dioxide sorbent and an active metal chelating agent which promotes a reaction between dissolved SO.sub.2 and dissolved NO to form hydroxylamine N-sulfonates. The hydroxylamine sulfonates are then separated from the scrubber solution which is recycled.
1986-01-01
Tin doping in spray pyrolysed indium sulfide thin films for solar cell applications
British Library Electronic Table of Contents (United Kingdom)
This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...
2010-01-01
British Library Electronic Table of Contents (United Kingdom)
Wild and tissue cultured plants of Portulaca grandiflora Hook. have shown to be able to decolorize a sulfonated diazo dye Navy Blue HE2R (NBHE2R) up to 98% in 40h. A significant induction in the activities of lignin peroxidase, tyrosinase and DCIP reductase was observed in the roots during dye decolorization. The wild plants and tissue cultures could independently decolorize and degrade NBHE2R into metabolites viz. N-benzylacetamide and 6-diazenyl-4-hydroxynaphthalene-2-sulfonic acid. A dye mixture and a textile effluent were also decolorized efficiently by P. grandiflora. The phytotoxicity study revealed reduction in the toxicity due to metabolites formed after dye degradation.
2011-01-01
Models for the rate of benzene sulfonation in heterogeneous systems
Macrokinetics of benzene sulfonation in liquid-liquid and gas-liquid systems has been studied in continuous mixed reactors. It has been shown that the rate of sulfonation of benzene at 25/sup 0/C in two liquid phases using concentrated sulfuric acid is kinetically controlled. Whereas the rate of the latter reaction by gaseous sulfur trioxide at the same temperature is largely affected by the diffusional phenomena. At this temperature, the rate of reaction in gas-liquid system was described by a model assuming a fast reaction in the liquid phase. However, by increasing the temperature, the fast reaction region gradually changed to instantaneous reaction regime. A model, describing such a regime has also been developed and verified experimentally.
1986-09-01
A sulfonated fluoroalkyl graft polymer (FGP) membrane was prepared as a polymer electrolyte. First, the FGP membrane was grafted with styrene under UV irradiation. The grafted FGP was then sulfonated to functionalize it for proton conductivity. The grafting degree of the membrane increased with increasing grafting time during UV irradiation. The proton conductivity of the membrane increased with increasing grafting degree. The swelling ratio was independent of the grafting time, however, the water uptake increased with increasing grafting degree. Based on these results, it was found that the UV-initiated styrene grafting occurred along the membrane thickness direction. Moreover, the membrane was embedded within the glass fibers of the composite. This composite electrolytic membrane had 1.15 times the proton conductivity of a Nafion 117 membrane.
2011-03-01
Proton exchange membrane materials for the advancement of direct methanol fuel-cell technology
A new class of hybrid organic-inorganic materials, and methods of synthesis, that can be used as a proton exchange membrane in a direct methanol fuel cell. In contrast with Nafion.RTM. PEM materials, which have random sulfonation, the new class of materials have ordered sulfonation achieved through self-assembly of alternating polyimide segments of different molecular weights comprising, for example, highly sulfonated hydrophilic PDA-DASA polyimide segment alternating with an unsulfonated hydrophobic 6FDA-DAS polyimide segment. An inorganic phase, e.g., 0.5 5 wt % TEOS, can be incorporated in the sulfonated polyimide copolymer to further improve its properties. The new materials exhibit reduced swelling when exposed to water, increased thermal stability, and decreased O.sub.2 and H.sub.2 gas permeability, while retaining proton conductivities similar to Nafion.RTM.. These improved properties may allow ...
2006-04-04
Energy Technology Data Exchange (ETDEWEB)
Amphiphilic block copolymers are synthesized by sulfonation of poly(styrene-b-methyl methacrylate) (PS-b-PMMA) using acetyl sulfate, and are blended with poly(vinylidene fluoride) (PVDF) to prepare a new proton exchange membrane, in which PMMA is miscible with PVDF. The morphology and the transport properties of the membranes are investigated as functions of the degree of sulfonation as well as the blend ratio. Notable transition of phase-separated morphology is observed as the PVDF content of the blend is increased. Both the proton conductivity and the ion-exchange capacity (IEC) of the membrane increase with increasing the degree of sulfonation of PS-b-PMMA, and they are also enhanced as the phase-separated domains of blend membrane are well-ordered. Unlike the Nafion membrane, the proton conductivity of the blend membrane increases up to 90 C, indicating the blend membrane shows better thermal stability than the Nafion ...
2009-03-01
Energy Technology Data Exchange (ETDEWEB)
Graft copolymerization of sodium styrene sulfonate (SSS) onto electron beam (EB) irradiated poly(vinylidene fluoride) (PVDF) films was investigated to find out a simple preparation process for sulfonic acid proton exchange membranes with respect to monomer concentration, absorbed dose, temperature, film thickness and storage time. The reaction order of the monomer concentration and absorbed dose of grafting was found to be 2.84 and 1.20, respectively. The overall activation energy for graft copolymerization reaction was calculated to be 11.36 kJ/mol. The initial rate of grafting was found to decrease with an increase in the film thickness. The trapped radicals in the irradiated PVDF films remained effective in initiating the reaction without considerable loss in grafting level up to 180 days, when stored under -60 {sup o}C. The presence and distribution of polystyrene sulfonate grafts in the obtained membranes were observed ...
2011-01-15
Chemical activation of MEK1 - a redox trigger for evaluating the effects of phosphorylation.
An approach to generate mimics of phosphorylated serine proteins chemically through site-specific sulfonation of cysteine is presented. This chemical modification is reversible in the presence of reducing agent and therefore is analogous to the kinase/phosphatase system used in nature. PMID:21717004
2011-06-30
Structure and Mechanical Properties of Boron-Doped Cubic ...
... by the boron doping in most of the alloys except for Al66Mn9Zr25 + 50 ppm B alloy; permanent deformation at ultimate compressive strength is not ...
Influence of germanium and oxygen impurities on the radiation hardening of monocrystalline silicon
International Nuclear Information System (INIS)
... defects doped materials germanium infrared radiation monocrystals neutron
Counting characteristics of X-ray detectors fabricated from indium-doped, gallium-doped, and chlorine-doped CdTe have been investigated. The detectors fabricated from indium-doped and gallium-doped crystals showed radiation-induced polarization, namely, a progressive decrease of count rate with an increase of photon fluence in the high-photon-fluence region, while the detectors fabricated from chlorine-doped crystals did not. Results from current-voltage characteristics of the detectors indicated that the different counting characteristics of these detectors originated from the difference in internal electric fields in each detector.
1995-08-01
Energy Technology Data Exchange (ETDEWEB)
Development was explained of non-phosphate detergent with zeolite (Z) and alpha-olefin sulfonate (AOS). 4A type Z was taken notice of as a builder to replace phosphate. In calcium ion trapping power, conventional sodium tripolyphosphate (STP) and Z are 158mgCaO/g and 150mg/g, respectively. However, because Z by the conventional method is large in crystal diameter, coagulates and adheres to matter to be washed, was newly developed fine Z, 0.9 {mu} m in primary grain diameter, which does not give abrasion nor occlusion to the washing machine, nor precipitate in the river. Because linear alkylbenzene sulfonate, combined with Z, is poorer in washing power than that, done with STP, was developed AOS, new non-phoshate use interfacial active detergent, which is excellent in all washing power, biodegradation speed and physical powder property. Improvement was variously made also in powdery detergent production technology. Though the non-phosphate ...
1990-07-01
British Library Electronic Table of Contents (United Kingdom)
Reactive blue 2 (RB-2) had been characterized as a relatively potent ectonucleoside triphosphate diphosphohydrolase (E-NTPDase) inhibitor with some selectivity for NTPDase3. In search for the pharmacophore and to analyze structure-activity relationships we synthesized a series of truncated derivatives and analogs of RB-2, including 1-amino-2-sulfo-4-ar(alk)ylaminoanthraquinones, 1-amino-2-methyl-4-arylaminoanthraquinones, 1-amino-4-bromoanthraquinone 2-sulfonic acid esters and sulfonamides, and bis-(1-amino-4-bromoanthraquinone) sulfonamides, and investigated them in preparations of rat NTPDase1, 2, and 3 using a capillary electrophoresis assay. Several 1-amino-2-sulfo-4-ar(alk)ylaminoanthraquinone derivatives inhibited E-NTPDases in a concentration-dependent manner. The 2-sulfonate group ...
2009-01-01
Miscibility enhancement of PP/PBT blends with a side-chain liquid crystalline ionomer
British Library Electronic Table of Contents (United Kingdom)
Side-chain liquid crystalline ionomer (SLCI) containing sulfonic acid groups with a polymethylhydrosiloxane main-chain was used in the blends of polypropylene (PP) and polybutylene terephthalate (PBT) as a compatibilizer. The crystalline behavior, morphological, and mechanical properties of the blends were investigated in detail by differential scanning calorimetry (DSC), polarizing optical microscope (POM), Fourier transforms infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). Revealed by the shift of Tm in DSC thermogram and the shift of the absorbed peak in FTIR spectra, specific interaction led to stronger interfacial adhesion between these phases, which resulted in much finer dispersion of the minor PBT phase in PP matrix. The SLCI containing sulfonate acid groups ac...
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
Validity of fern spore germination bioassays for the effects of environmental pollution was established by many researchers. Some workers studied the phytotoxicity of linear alkyl benzene sulfonate (LAS) on the spores of Diplazium esculentum and observed that LAS levels above 0.001% are toxic to fern spores. Water pollution due to synthetic detergents has been increasing continuously during the last few years due to their extensive use in domestic life, agriculture and industry. These detergents are among the most common pollutants responsible for water pollution. In view of this fact, the phytotoxicity of LAS on germination of an aquatic fern Ceratopteris thalictroides spores was studied. However, in these studies, only germination pattern was taken as index and no observations were made on the developmental stages.
1989-07-01
Chemistry between crosslinks affects the properties of peptide hydrogels
British Library Electronic Table of Contents (United Kingdom)
Protein hydrogels were prepared by substituting ovalbumin with different concentrations of ethyl vinyl sulfone (EVS) or acrylic acid (AA) and crosslinking with divinyl sulfone (DVS). Fourier transform-infrared (FT-IR) spectroscopic studies confirmed the addition of EVS, AA, and DVS onto the protein. Swelling was assessed as a function of pH in the range of 2.5 to 9.4 and ionic strength. The elastic modulus of the gels was determined in shear and compression. Stress relaxation was assessed in compression. The substituent highly affected swelling and modulus with both hydrogels displaying non-Gaussian behavior in the range of hydrogel environments studied. Acrylic acid substituted ovalbumin exhibited a decreasing modulus with increasing swelling behaving as a polyelectrolyte with low added s...
2011-01-01
Thermally stable drilling fluid additive
Energy Technology Data Exchange (ETDEWEB)
This invention relates to a water soluble polymer and method for its preparation. The water soluble polymer exhibits superior thermal stability characteristics when used as an additive in aqueous drilling fluids. The polymer consists of a major portion of a catechol based monomer and a dicarboxylic acid. Other monomers and materials are added to enhance the functional characteristics of the drilling fluid additive. The method of this invention includes the mixing of monomers, polymerization of that mixture and optionally the steps of hydrolysis and sulfonation.
1985-06-25
Energy Technology Data Exchange (ETDEWEB)
Using the PMR method the interaction of zirconium and hafnium tetrachlorides with tri.tet.butylphenyl ester of 1,2- naphthoquinonediazide (2)-5-sulfonic acid is studied. The formation of MCl/sub 4/xNQD complexes is established, the equilibrium constants and thermodynamic parameters of complexing reaction are determined. The presence of rapid ligand exchange, proceeding according to associative mechanism, is detected. The rate constants and activation energies of the exchange reaction are calculated.
1981-11-01
International Nuclear Information System (INIS)
Using the PMR method the interaction of zirconium and hafnium tetrachlorides with tri.tet.butylphenyl ester of 1,2- naphthoquinonediazide (2)-5-sulfonic acid is studied. The formation of MCl_4xNQD complexes is established, the equilibrium constants and thermodynamic parameters of complexing reaction are determined. The presence of rapid ligand exchange, proceeding according to associative mechanism, is detected. The rate constants and activation energies of the exchange reaction are calculated.
UK PubMed Central (United Kingdom)
A mutant strain of Saccharomyces cerevisiae (D10-ER1) has been isolated after a two-step mutagenesis of strain 4059-358D (SUC 1) using ethyl methane sulfonate. Cells of this new strain produced a level...Full Text Available
1978-09-01
Oil well drilling clay conditioners and method of their preparation
Energy Technology Data Exchange (ETDEWEB)
Drilling fluid additives are prepared by oxidation of sulfonated lignin-containing materials with manganese dioxide under highly acidic conditions to make manganese lignosulfonates. Additional improvements in the rheological properties of the additives may be obtained by complexing the manganese lignosulfonate so obtained with a heavy metal cation (preferably iron or copper), by, for example, addition of ferrous sulfate or ferric sulfate to the manganese lignosulfonate. These products show the requisite combination of rheological properties for a satisfactory drilling fluid additive or conditioner.
1984-05-08
Energy Technology Data Exchange (ETDEWEB)
Fe-sheathed MgB{sub 2} tapes with cheap stearic acid, Mg stearate and Zn stearate doping were prepared through the in situ powder-in-tube method. It is found that J{sub c}, H{sub irr} and H{sub c2} were significantly enhanced by doping. Compared to the pure tapes, J{sub c} for all the doped samples was improved by more than an order of magnitude in a high-field regime. At 4.2 K, the transport J{sub c} reached 2.02 x 10{sup 4} A cm{sup -2} at 10 T for the Zn stearate doped tapes and 3.72 x 10{sup 3} A cm{sup -2} at 14 T for the stearic acid doped samples, respectively. Moreover, at 20 K, H{sub irr} for the Zn stearate doped tape achieved 10 T, which is comparable to that of the commercial NbTi at 4.2 K. The improvement of J{sub c}-H properties in doped samples can be attributed to the increase of H{sub c2} resulting from the incorporation of ...
2007-05-15
Valence transition and magnetic ordering in Sn doped EuPd/sub 2/Si/sub 2/
Energy Technology Data Exchange (ETDEWEB)
The sharp, temperature induced, continuous valence transition in EuPd/sub 2/Si/sub 2/ is drastically changed by doping with Sn at the Si site up to 5 at.%. Only a first order valence transition occurs for a 3% Sn doped sample and the 2/sup +/ component which survives the valence transition orders magnetically at 4.2 K. No valence transition at all occurs for a 5% Sn doped sample right up to 1.9 K and magnetic ordering sets in around 30 K.
1983-12-01
British Library Electronic Table of Contents (United Kingdom)
Polycrystalline ZnO doped with Mn (5 and 10at%) was prepared by the co-precipitation method. The effect of Mn doping on the photocatalytic, antibacterial activities and the influence of doping concentration on structural, optical properties of nanoparticles were studied. Structural and optical properties of the particles elucidated that the Mn2+ ions have substituted the Zn2+ ions without changing the Wurtzite structure of ZnO. The optical spectra showed a blue shift in the absorbance spectrum with increasing dopant concentration. The photocatalytic activities of ZnO powders were evaluated by measuring the degradation of methylene blue (MB) in water under the UV region. It was found that undoped ZnO bleaches MB much faster than manganese doped ZnO upon its exposure to the U...
2010-01-01
Materials design for semiconductor spintronics by ab initio electronic-structure calculation
International Nuclear Information System (INIS)
A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ...
2003-04-01
International Nuclear Information System (INIS)
Thermochromic tungsten-doped vanadium dioxide (VO2) powders were successfully synthesized by thermal reduction using V2O5 as a vanadium precursor. The products were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and differential scanning calorimetry (DSC). The results indicated that W was successfully doped into the crystal lattice of VO2 matrix, and prepared tungsten-doped VO2 had a rod-like morphology. The effects of reducing temperature and annealing temperature on the crystallographic structures were also discussed. The phase transition temperature (Tt) of VO2 could be simply tuned by changing the doping concentration of tungsten. When the doping concentration was 1.58 mol%, the Tt could be reduced to 37.8 oC from initial 69.5 oC, suggesting that tungsten-doped VO2 possesses prominent ...
2010-08-20
Energy Technology Data Exchange (ETDEWEB)
Vanadium doped manganese bi-oxide has been obtained from a solution containing both cations. The X-ray diffraction of this material indicates a rutile-type phase but the enlargement of some lines supports the existence of several lattice defects. Also the particle size of the doped material is significantly smaller than the one of the non-doped material obtained in the same conditions. The presence of pentavalent vanadium inside the lattice leads to a small amount of trivalent manganese. Electron microscopy shows the existence of defects which have a tendency of becoming well-ordered and to stabilize a sur-structure. At ambient temperature, the electrochemical behaviour of doped manganese bi-oxide is greatly improved when compared to the non-doped phase. This behaviour is due to the presence of numerous lattice defects and to the smaller size of crystallites. In polymer batteries, ...
1996-12-31
British Library Electronic Table of Contents (United Kingdom)
Several thin film composite nanofiltration membranes have been prepared by spin coating a sulfonated poly(ether ether ketone) solution on a polyethersulfone support, followed by thermal treatment. The most optimal developed nanofiltration membrane shows a clean water permeance of ~4.5Lm^-^2h^-^1bar^-^1 and a molecular weight cut off (MWCO) of ~500gmol^-^1. No irreversible changes in membrane performance have been observed after prolonged exposure (up to several weeks) of this membrane to solutions with a pH in the range 0-14. Compared to Desal-5-DK, the developed membrane displays a similar water permeance and a higher NaCl retention. In comparison to commercially available pH stable membranes, MPF-34 and NP030P, it reveals a higher water permeance. Permeance and MWCO analysis at varying p...
2011-01-01
International Nuclear Information System (INIS)
A novel method of luminescence enhancement effect for the determination of balofloxacin (BLFX) was proposed. A new system of the BLFX-Eu3+-SDBS (sodium dodecylbenzene sulfonate) was investigated. It was found that SDBS significantly enhanced the luminescence intensity of the BLFX-Eu3+ complex (about 20-fold). Under the optimized experimental conditions, the system exhibits an excellent linear relationship between the enhanced luminescence intensity and the concentration of BLFX over the range of 1.0x10-8-8.0x10-7 mol L-1 with a correlation coefficient (R) of 0.9994, and the detection limit (3?) of the method was determined as 2.0x10-9 mol L-1. This method has been successfully applied for the determination of BLFX in pharmaceuticals and human urine/serum samples. Compared with most of the other methods reported, the rapid and simple procedure proposed in the text offers higher sensitivity, wider linear range, and better stability.
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
A number of fragment ion onsets from the photoionization of CH/sub 3/SCCSCH/sub 3/ and CH/sub 3/SSSCH/sub 3/ have been measured. In addition, our experiment has been converted to a molecular beam source which will increase the precision of our measurements. Exhaustive oxidation of the divalent sulfur to sulfonic acids serves to quench the effects of quadrupolar broadening and thereby allowing for quantitative evaluation of structurally similar sulfonic acids. W/sub 1/2/ are reduced to < 25 Hz at 19 MHz (57,500 Gauss). Electronegative substituents shield the /sup 33/S nucleus perhaps imploying more efficient 2p-3d..pi.. backbonding between sulfur and oxygen. ..cap alpha..-Hetero substituents of sulfonyl groups do not influence the shift of the /sup 33/S to a dramatic extent. The exception is the dianion of thiosulfate compared to the dianion of sulfate. Lanthanide shift reagents, (Eu(fod)/sub 3/), are potentially useful in distinguishing ...
1984-01-01
International Nuclear Information System (INIS)
Sodium benzene sulfonate (BS) was decomposed in aqueous TiO_2 dispersions under highly concentrated solar light illumination to examine the photocatalytic characteristics of a parabolic round concentrator (PRC) reactor to degrade the pollutant without visible light absorption. The effects of such operational parameters as initial concentration, volume of the aqueous BS solution, oxygen purging, and TiO_2 loading on the kinetics of decomposition of BS were investigated. An effective photodegradation necessitates a suitable combination of initial volume and concentration of BS solution. Relative to atmospheric air, oxygen purging significantly accelerates the degradation process at high initial concentrations of BS (0.40 mM or 1.0 mM). Optimal TiO_2 loading was 9 gl "-"1, greater than previously reported. Elimination of TOC (total organic carbon) followed pseudo first-order kinetics in the initial stages of the photodegradation process. The relative photonic ...
Passivation-free solid state battery
Energy Technology Data Exchange (ETDEWEB)
This invention pertains to passivation-free solid-state rechargeable batteries composed of Li.sub.4 Ti.sub.5 O.sub.12 anode, a solid polymer electrolyte and a high voltage cathode. The solid polymer electrolyte comprises a polymer host, such as polyacrylonitrile, poly(vinyl chloride), poly(vinyl sulfone), and poly(vinylidene fluoride), plasticized by a solution of a Li salt in an organic solvent. The high voltage cathode includes LiMn.sub.2 O.sub.4, LiCoO.sub.2, LiNiO.sub.2 and LiV.sub.2 O.sub.5 and their derivatives.
1998-01-01
Passivation-free solid state battery
Energy Technology Data Exchange (ETDEWEB)
This invention pertains to passivation-free solid-state rechargeable batteries composed of Li{sub 4}Ti{sub 5}O{sub 12} anode, a solid polymer electrolyte and a high voltage cathode. The solid polymer electrolyte comprises a polymer host, such as polyacrylonitrile, poly(vinyl chloride), poly(vinyl sulfone), and poly(vinylidene fluoride), plasticized by a solution of a Li salt in an organic solvent. The high voltage cathode includes LiMn{sub 2}O{sub 4}, LiCoO{sub 2}, LiNiO{sub 2} and LiV{sub 2}O{sub 5} and their derivatives. 5 figs.
1998-06-16
Micellar slug for oil recovery
Energy Technology Data Exchange (ETDEWEB)
A micellar slug for use in the recovery of oil is described, the slug containing a hydrocarbon, an aqueous medium, a surfactant, and a cosurfactant. The surfactant contains as an essential component an alpha-olefin sulfonate having 10 to 26 carbon atoms and containing 0.1% to 15% by weight by weight of a disulfonate. This micellar slug has an excellent salinity tolerance and hard-water resistance. Furthermore, the micellar slugs of the present invention are capable of forming micro-emulsions having a sufficiently low interfacial tension and, therefore, can improve oil recovery efficiency.
1985-08-27
Selective emitter using porous silicon for crystalline silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured emitter sheet resistances at the high- and ...
2009-06-15
Energy Technology Data Exchange (ETDEWEB)
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology ...
2007-10-15
International Nuclear Information System (INIS)
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology ...
2007-10-01
Thulium-doped vanadate crystals: Growth, spectroscopy and laser performance
British Library Electronic Table of Contents (United Kingdom)
This work is concentrated on growth, spectroscopy and laser performance of thulium-doped vanadate crystals. At the beginning the growth techniques are analyzed and then the matrix of vanadates crystal, its structure and physicochemical properties are explained together with the rare earth activators influence. Detailed spectroscopy of the thulium-doped vanadate crystals then follows. On the background of this theoretical analysis and state of the art of the subject the description of thulium vanadate lasers (especially Tm:YVO"4, Tm:GdVO"4, and Tm:LuVO"4) together with their generated output radiation characteristics are presented.
2011-01-01
Temperature Dependences of Leakage Currents of ZnO Varistors Doped with Rare-Earth Oxides
British Library Electronic Table of Contents (United Kingdom)
Rare-earth oxides are doped into ZnO varistors as grain growth inhibitors for increasing the varistors' voltage gradients. However, their leakage currents become large and their nonlinear coefficients decrease at the same time. The reasonable explanation for such a phenomenon has not yet been available. In this paper, the temperature dependences of varistor samples' leakage currents are investigated, which reveal that the increased leakage currents of ZnO varistors with Y2O3 doping are mainly due to the bypass paths through the intergranular materials at grain corners.
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
Surface doping of conjugated polymers is realized by depositing a thin layer of graphene oxide (GO) on top of the polymers. The high proton density and the unique 2D structure of GO facilitate the protonic surface doping of conjugated polymers to achieve high conductivities. This finding represents a new strategy for improving charge transport across the metal/conjugated polymer interface to achieve much improved performance in organic solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
2011-04-26
Impedance spectroscopy study with H-doped ammonium uranylphosphate self supported membranes
International Nuclear Information System (INIS)
Equivalent circuit and electrical parameters for H-doped NH_4UO_2PO_4.3H_2O self supported membranes have been determined by impedance spectroscopy. The measurements were carried out with a dry membrane, at different temperatures, and a wet membrane in contact with different electrolyte solutions. Resistance values for the dry membrane decrease with temperature increase, which agrees with the weak protonic character of the H-doped ammonium uranylphosphate. On the other hand, differences in the electrical parameters, depending on the electrolyte considered were also obtained and are attributed to different conduction mechanisms. (Author).
Electron paramagnetic resonance of nitroxide-doped magnetic fluids
Energy Technology Data Exchange (ETDEWEB)
Electron paramagnetic resonance was used to investigate surface-coated magnetite-based magnetic fluids doped with TEMPOL. Two magnetic fluid samples, having magnetite nanoparticles with average diameter of 94 A and coated with different coating layers (lauric acid plus ethoxylated polyalcohol in one case and oleoylsarcosine in the other case), were doped with TEMPOL (6 mM and pH 7.4) and investigated as a function of the nanoparticle concentration. The resonance field and the resonance linewidth both scale linearly with the nanoparticle concentration.
2002-11-01
International Nuclear Information System (INIS)
(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,
The Effect of Boron on the Mechanical Behavior of Copper ...
... 500 ppm, boron increases the 0.2% offset strength; results show that boron doping does not appreciably affect ultimate compressive strength; for 0 ...
Nitrogen doping into titanium dioxide by the sol?gel method using nitric acid
British Library Electronic Table of Contents (United Kingdom)
N-doped TiO2 has been prepared by use of sol?gel systems containing titanium alkoxide, with nitric acid as the nitrogen source. The time needed for gelation of the systems was drastically reduced by ultrasonic irradiation. The peaks assigned to the nitrate and nitrous ions were observed by FT-IR measurement during the sol?gel reaction. The N-doping was confirmed by the observation of N?O peaks in the XPS spectrum of the sample heated at 400??C. The nitrate ion acted as an oxidizer of the ethanol solvent and titanium species. The TiO2 became doped with nitrogen oxide species as a result of reduction of nitrate ion incorporated into the dried gel samples. These results indicated that the added nitric acid was reduced during the sol?gel transition and heating process, and the resulting NO spe...
2011-01-01
Microstructure and properties of ultrafine WC-10Co composites with chemically doped VC
British Library Electronic Table of Contents (United Kingdom)
Vanadium carbide is the most effective grain growth inhibitor for ultrafine WC-Co composites due to its high solubility and mobility in the cobalt phase at relatively low temperatures; however, there are still some debates over the best way to introduce it into the WC-Co formulation. In this paper, the differences between admixed and chemically doped grain growth inhibitors on the microstructural development and properties of an ultrafine WC-10Co composite are discussed. The densification rate of chemically doped samples is slower in the early stage of sintering and the WC grain sizes of the sintered alloys are finer than those of admixed samples, leading to the increase of hardness and transverse rupture strength of the sintered alloys. The effectiveness of the chemically doped inhibitor ...
2011-01-01
International Nuclear Information System (INIS)
The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society
2000-02-07
We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.
2005-01-01
British Library Electronic Table of Contents (United Kingdom)
Heavily doped emitters with low saturation current density are of particular interest for selective emitter solar cells. These emitters can be obtained by laser doping through the phosphosilicate glass layer formed after thermal diffusion from POCl3 gas. The experimental results show that in contrast to purely POCl3 furnace-diffused emitters, the saturation current density of laser-doped emitters does not increase linearly as sheet resistance decreases, but rather features two distinct regimes. In one of these regimes, the saturation current density is found to decrease as the sheet resistance decreases, reaching values lower than those of furnace emitters. This peculiar behaviour was explained by both qualitative analysis and numerical simulations.
2011-01-01
International Nuclear Information System (INIS)
Portuguese 2008 2 p. Brazil Silva, Diogo Lima da Andrade, Leonardo
2008-05-26
Energy Technology Data Exchange (ETDEWEB)
In order to discuss effects of lithium iodide (LiI) doping on condensation structure of brown coals during heating, spectral changes were measured by using an in-situ FT-IR. It was found that the LiI doping accelerates weight reduction due to heating, and the doping effect is affected by coal structure. Both of Loy Yang (LY) coal and its LiI doped coal (DLY) had absorption intensity of the FT-IR spectra decreased with rising temperature, and the absorption center belonging to an OH group shows different shifts between the LY and DLY coals. This indicates that the LiI doping has affected the change in hydrogen bonding patterns associated with heating. Both of South Banko (SB) and LY coals had the absorption spectral intensity in the OH group decreased as the weight reduction (conversion) rate increased. Reduction in the OH groups associated with heating is caused by volatilization ...
1996-10-28
Double perovskite catalysts for oxidative coupling
Energy Technology Data Exchange (ETDEWEB)
Alkali metal doped double perovskites containing manganese and at least one of cobalt, iron and nickel are useful in the oxidative coupling of alkane to higher hydrocarbons.
1991-01-01
Boron transient enhanced diffusion in heavily phosphorus doped silicon
International Nuclear Information System (INIS)
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
1996-12-02
A novel single-step synthesis of N-doped TiO"2 via a sonochemical method
British Library Electronic Table of Contents (United Kingdom)
A novel single-step synthetic method for the preparation of anatase N-doped TiO"2 nanocrystalline at low temperature has been devoleped. The N-doped anatase TiO"2 nanoparticles were synthesized by sonication of the solution of tetraisopropyl titanium and urea in water and isopropyl alcohol at 80^oC for 150min. The as-prepared sample was characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and UV-vis absorption spectrum. The product structure depends on the reaction temperature and reaction time. The photocatalytic activity of the as-prepared photocatalyst was evaluated via the photodegradation of an azo dye direct sky blue 5B. The results show that the N-doped TiO"2 nanocrystalline prepared via sonication exhibit an excellent photocatalytic...
2011-01-01
A first principles study on optical transparency mechanism in Dy doped #alpha#-SiAlON ceramics
International Nuclear Information System (INIS)
Dy doped #alpha#-SiAlON ceramics prepared by the hot-pressing method show a high optical transmittance value, >70%, in the infrared region of 1.5-4.5 #mu#m. First principles calculations have been carried out to reveal the underlying transparency mechanism. It is found that the valence shell of doped Dy atoms interacts strongly with the doping states of #alpha#-SiAlON, resulting in the increase in the optical gap from 0.4 to 1.1 eV, which suppresses the photoabsorption in the wavelength region longer than 1.0 #mu#m and leads to the good transparency property. The calculated optical transmission spectra are in good agreement with the corresponding experiments.
2009-11-01
Optical in situ size determination of single lanthanide-ion doped oxide nanoparticles
We show that the size of a lanthanide-ion doped nanoparticle can be accurately determined from its luminosity. The optically determined size distribution is in very good agreement with the distribution obtained from transmission electron microscopy. These data confirm that single nanoparticles are visualized in microscopy experiments. Nanoparticles as small as 13 nm are detectable with integration times of 500 ms.
2006-12-01
International Nuclear Information System (INIS)
Fe-doped MnO2 with a hollow sea urchin-like ball chain shape was first synthesized under a high magnetic field of 10 T. The formation mechanism was investigated and discussed in detail. The synthesized samples were characterized by XRD, SEM, TEM, EMPA, and vector network analysis. By doping MnO2 with Fe, the relative complex permittivity of MnO2 and its corresponding loss tangent clearly decreases, but its relative complex permeability and its corresponding loss tangent markedly increases. Moreover, the theoretically calculated values of reflection loss show that with increasing the Fe content, the as-prepared Fe-doped MnO2 exhibits good microwave absorption capability. -- Graphical Abstract: Fe-doped MnO2 with a hollow sea urchin-like ball chain shape was first synthesized in a high magnetic field of 10 T via a simple chemical process. Display Omitted Highlights: ? Fe-doped MnO2 ...
2011-05-01
Molecules with polymerizable ligands as precursors to porous doped materials
Energy Technology Data Exchange (ETDEWEB)
Titanium and aluminum alkoxide derivatives with polymerizable ligands such as 2-(methacryloyloxy)ethylacetoacetate (HAAEMA), oleic acid and geraniol (HOGE) have been obtained. The various compounds have been characterized by FT-IR and NMR {sup 1}H. Copolymerization with styrene and divinylbenzene affords porous doped organic materials which have been characterized by scanning electron microscopy (SEM), elemental analysis, density measurements.
1996-12-31
Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing
Energy Technology Data Exchange (ETDEWEB)
The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.
2006-05-15
Conductivity of doped N-carbazolyl-substituted polysilanes
Energy Technology Data Exchange (ETDEWEB)
A series of N-carbazolyl-substituted silane homo- and copolymers has been prepared by Wurtz coupling. Doping with iodine on these copolymer films increases the electrical conductivity to the range 10{sup -6}-10{sup -3} S cm{sup -1}. The conductivity depends strongly on the composition of the copolymer; it reaches the maximum value for N-carbazolyl-substituted silane homopolymer. The effects of carbazolyl group on conductivity and charge transport mechanisms in the polymer are discussed. (orig.)
1995-08-01
A real time neutron diffraction study on the reaction of AsF_5 with deuterated polyparaphenylene
International Nuclear Information System (INIS)
The doping of deuterated polyparaphenylene [C_6D_4]sub(n) with AsF_5 has been investigated by real time neutron diffractometry at 100, 400 and 820 mbar AsF_5 pressure. The reaction appears to be diffusion controlled. Evidence for one doped phase with partial crystalline order was obtained. Structural considerations suggest two polymer chains plus one dopant ''string'' as the repetitive unit. (Auth.).
1982-01-01
Thermoluminescence studies in cerium doped NaCl crystals
International Nuclear Information System (INIS)
Cerium is known to enter substitutionally in trivalent state when doped in alkali halides. Cerium doped NaCl crystals exhibit greatly enhanced thermoluminescence output upon X-irradiation at RT, the intensity of emission being about 10 times that in undoped crystals for similar dosage of irradiation. The cerium doped crystals give upon X-irradiation a very intense glow peak at 145degC with shoulders at 120degC and 210degC. Upon partially bleaching the crystal with F-light, the peak at 120degC becomes prominent probably due to faster bleaching of the glow at 145degC. From further optical bleaching studies, it is concluded that the glow peak at around 120degC is due to cerium centres in the irradiated crystal and the 145degC peak due to F centres. This F centre emission occurs at lower temperature, compared to that in the undoped crystals where it occurs at around 180degC. The spectral emission in the Ce ...
British Library Electronic Table of Contents (United Kingdom)
Previously, we demonstrated that the lithium ion conduction in the perovskite-type manganese fluoride is attributed to counter cation-site vacancy mechanism. The divalent counter cation-doped KxBa(1-x)/2MnF3 was theoretically predicted as the lithium ion conductor in the perovskite-type manganese fluoride. In this study, we considered the oxygen doping for KxBa(1-x)/2MnF3 to realize the higher lithium ion conductivity. It is because lithium ion forms the stronger ionic bond with the doped oxygen anion. The hybrid-DFT calculations were performed to investigate the lithium ion conduction in the oxygen-doped KxBa(1-x)/2MnF3. The calculation results were discussed from the viewpoints of the potential energy curve, electron densities, and charge and spin densities. The effect of the lithium ion...
2009-01-01
British Library Electronic Table of Contents (United Kingdom)
In this work, bismuth sodium titanate (Bi0.5Na0.5)TiO3 (BNT) and praseodymium (Pr)-doped BNT were successfully produced using the soft combustion technique. The effects of Pr doping on stoichiometry, microstructure, density and dielectric properties were studied. Pure Pr-doped BNT was obtained in all samples containing 5, 10 and 20mol% Pr after calcination at 800^oC for 3h. The produced powders were then pressed into pellets and sintered at 1100^oC for 3h. The very similar ionic radii of Pr^3^+ with Bi^3^+ and Na^+ made it possible to substitute both Bi and Na. The crystallite size and grain size decreased with increasing Pr amount because Pr acted as grain growth inhibitor, both for calcined powders and for sintered pellets. Maximum density was obtained in 5mol% Pr-doped BNT, beyond which...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Electron paramagnetic resonance (EPR) of coals was considered by using iodine doping technique. Sub-bituminous coal (WA) and bituminous coal (UF) were used to observe EPR spectra using microwaves. With the UF coal, strength of the narrow component of the spectra was found constant regardless of amount of the doped iodine, wherein radicals without interaction with iodine were detected. Strength of the broad component increased with the iodine doping amount, where in deviation of {pi} electrons was detected, which have been generated as a result of interaction between aromatic rings and iodine in the coals. Spin concentration of the WA coal with low coalification degree is constant regardless of the iodine doping amount, and the interaction of the iodine with the aromatic rings was found small. The higher the coalification degree, the more the aromatic ring structure grows, and electron donor capability ...
1996-10-28
The primary concern of this work is to study the emission characteristics of a series of chiral nematic liquid crystal lasers doped with different laser dyes (DCM, pyrromethene 580, and pyrromethene 597) at varying concentrations by weight (0.5-2 wt %) when optically pumped at 532 nm. Long-wavelength photonic band-edge laser emission is characterized in terms of threshold energy and slope efficiency. At every dye concentration investigated, the pyrromethene 597-doped lasers exhibit the highest slope efficiency (ranging from 15% to 32%) and the DCM-doped lasers the lowest (ranging from 5% to 13%). Similarly, the threshold was found to be, in general, higher for the DCM-doped laser samples in comparison to the pyrromethene-doped laser samples. These results are then compared with the spectral properties, quantum efficiencies and, where possible, fluorescence lifetimes of the dyes ...
2010-02-01
Aging and compatbility of TNF-doped mylar
Energy Technology Data Exchange (ETDEWEB)
TNF-doped Mylar is a new radiation-hard dielectric that has recently been qualified as a viable substitute for Mylar in capacitors. The advantage of TNF-doped Mylar is that it satisfies both the nuclear safety and radiation hardness requirements of weapons. Mylar is not radiation-hard. Aging and compatibility studies were carried out to insure that (1) TNF does not diffuse from the film during fabrication of the capacitor or during storage; and (2) there are no compatibility problems with aluminum foil (the conductor) or Fluorinert (the secondary dielectric). Losses of TNF were barely detectable during the vacuum bakes used in fabricating capacitors or during accelerated aging tests carried out below T{sub g} (70C) over a two year period in air. In other accelerated tests, no compatibility problems were detected with aluminum or Fluorinert. TNF-doped Mylar is now being used in the MC-4109 capacitor that was called out for ...
1990-01-01
International Nuclear Information System (INIS)
The synthetic process of polyethylene cation exchange capillary via radiation grafting polystyrene by simultaneous irradiation with "6"0Co #gamma#-ray source and sulfonation with concentrated H_2SO_4 was studied. The effects of dose, dose rate, monomer concentration, solvents, temperature and crosslinking agents on the graft copolymerization of styrene with polyethylene capillary were illustrated. The relationship between the radiation grafting conditions and the properties of ion-exchange capillary were examined. A polyethylene cation exchange capillary with I.D. 0.8 mm, length 20 m, exchange capacity 0.7 Meq/g 60% capacity in 10 s (flow rate 20 ml/min) was prepared. No significant loss of copacity was found from this ion-exchange capillary after 200 adsorption/regeneration cycles.
International Nuclear Information System (INIS)
A new reagent 7-(6-Br-2-henzthiazolilazo)-8-oxyquinoline-5-sulphoacid has been studied spectrophotometrically. Dissociation constants have been determined in 50% acetone (pK_1=2.5 and pK_2=5.9) and 50% dioxane (pK_1=1.7 and pK_2=6.1) as well as molar extinction coefficients of the reagent dissociated form in the same solvents (71.1.10"3 and 72.4.10"3). The conditions have been studied of complexing the reagent with ions of uranium (6), zinc (2), and manganese (2) in 50% dioxane (pH 2.5-4.5) and the properties of the formed complexes.
1977-01-01
British Library Electronic Table of Contents (United Kingdom)
This work reports the development of an automatic methodology based on the use of 1-anilinonaphthalene-8-sulfonate (ANS) as an interfacial fluorescent probe for detecting the hydrophobic environment shift around the probe, caused by the hydrolytic action of PLA2 on the liposomes. The implementation of this reaction in a sequential injection analysis (SIA) system along with the use of the mixing chambers permitted the evaluation of PLA2 activity and assessment of the inhibitory effect of the non-steroidal anti-inflammatory drugs (NSAIDs) on PLA2 activity. Several studies were performed with the aim of establishing the appropriate flow system configuration: the liposome substrate; PLA2 and ANS optimum concentrations and incubation times before and after the enzyme addition. Based on these st...
2009-01-01
Non-oxidative removal of hydrogen sulfide from gaseous, petrochemical, and other streams
Energy Technology Data Exchange (ETDEWEB)
This patent describes a method of reducing the hydrogen sulfide level in streams containing hydrogen sulfide at concentrations from about 2 ppm up to about 1,000 ppm. It comprises reacting the hydrogen sulfide with an unsaturated hydrocarbon in the presence of an acidic solid catalyst selected from the group consisting of polymeric sulfonic acid resins, solid polyphosphoric acid, supported sulfuric acid, supported boric acid, silica-aluminas, clays, faujasite, mordenite, and L, omega, X or Y zeolites at mercaptan-forming concentrations, and recovering a stream having a reduced hydrogen sulfide concentration and containing no more than 5 ppm hydrogen sulfide.
1991-07-23
British Library Electronic Table of Contents (United Kingdom)
Polypyrrole (PPy) was prepared from different mixed-surfactant solutions with ammonium persulfate as an oxidant. Three types of combinations were selected, including cationic/anionic, cationic/nonionic, and anionic/nonionic mixed-surfactant solutions. The surfactants used in the experiments included cetyltrimethylammonium bromide (cationic surfactant), sodium dodecyl sulfate (anionic surfactant), sodium dodecyl sulfonic acid salt (anionic surfactant), poly(vinyl pyrrolidone) (nonionic surfactant), and poly(ethylene glycol) (nonionic surfactant). The morphology, structure, and conductivity of the resulting PPy were investigated in detail with scanning electron microscopy, Fourier transform infrared spectra, and the typical four-probe method, respectively. The results showed that the interac...
2007-01-01
Light from polymers - prediction of service life
Energy Technology Data Exchange (ETDEWEB)
Stress chemiluminescence (SCL) is a novel technique for monitoring aging reactions of polymeric materials under stress. A special apparatus for detecting the chemiluminescence of solid polymers has been designed and built. There is a correlation between an enhanced chemiluminescence signal at low levels of applied stress and subsequent premature mechanical failure of samples of tetraglycidyl-4,4'-methylenedianiline (TGMDA) cured with 4,4'-diaminodiphenyl sulfone (DDS) the most commonly used epoxy in high performance fiber composites. Chemiluminescence data from silicone cushions is used to validate accelerated aging tests and preliminary results from Kevlar fibers are reported. The technique will be extended to other polymeric materials including fiber composites. 22 references, 7 figures, 1 table.
1984-01-01
Inhibition of barium sulfate deposition by polycarboxylates of various molecular structures
Energy Technology Data Exchange (ETDEWEB)
To establish a relationship between the molecular structure of polycarboxylates and their growth-retarding influence on barium sulfate, seeded-suspension-growth experiments were performed at various inhibitor concentrations and pH values. Two types of polycarboxylates with a molecular structure based on their polyacrylic or maleic acid were studied. The molecular structure of these compounds were varied by particle substitution with monomers containing hydroxyl, amide, and sulfonic acid, as well as hydrophobic groups. Hydrophobic groups are detrimental to good inhibitor performance, whereas the introduction of OH, NH {sub 2}, or SO {sub 3} H groups presents opportunities to enhance the inhibitor effectiveness. The sequence in performance of the compounds on barium sulfate was compared with the sequence formerly obtained for calcium sulfate dihydrate.
1990-02-01
British Library Electronic Table of Contents (United Kingdom)
AbstractBackground: The dinitrofluorobenzene/dinitrosulfonic acid (DNFB/DNS) model was originally described as an experimental model of intestinal inflammation resembling human ulcerative colitis (UC). Due to the absence of acceptable UC experimental models for pharmacological preclinical assays, here we examine the immune response induced in this model. Methods: Balb/c mice were sensitized by skin application of DNFB on day 1, followed by an intrarectal challenge with DNS on day 5. We further expanded this model by administering a second DNS challenge on day 15. The features of colonic inflammation and immune response were evaluated. Results: The changes observed in colonic tissue corresponded, in comparison to the trinitrobenzene sulfonic acid (TNBS) colitis model, to a mild mucosal effe...
2011-01-01
Comparison of antioxidant abilities of magnolol and honokiol to scavenge radicals and to protect DNA
British Library Electronic Table of Contents (United Kingdom)
The antioxidant properties of magnolol and honokiol were evaluated in the experimental systems of reducing ONOO^- and ^1O"2, bleaching @b-carotene in linoleic acid (LH) emulsion, and trapping 2,2'-azinobis(3-ethylbenzothiazoline-6-sulfonate) cationic radical (ABTS^+?) and 2,2'-diphenyl-1-picrylhydrazyl radical (DPPH), and then were applied to inhibit the oxidation of DNA induced by Cu^2^+/glutathione (GSH) and 2,2'-azobis(2-amidinopropane hydrochloride) (AAPH). Magnolol and honokiol were active to reduce ONOO^- and ^1O"2. Honokiol showed a little higher activity to protect LH and to inhibit Cu^2^+/GSH-induced oxidation of DNA than magnolol. In addition, honokiol exhibited higher activities to trap ABTS^+? and DPPH than magnolol. In particular, honokiol trapped 2.5 radicals while magnolol o...
2011-01-01
British Library Electronic Table of Contents (United Kingdom)
Cyclization of deproteinized natural rubber (DPNR) or purified natural rubber latex was effectively performed in latex phase by using trimethylsilyl-trifluoromethane sulfonate or trimethylsilyl triflate (TMSOTF) as a novel catalyst, which is still not reported in the case of natural rubber latex. Various cyclization conditions affecting the degree of cyclization were studied, such as dry rubber contents, temperature, TMSOTF concentrations, and time. The cyclized products were characterized by FTIR, Raman, 1H-, and 13C-NMR spectroscopies, as well as DSC and TGA. The degree of cyclization was estimated by 1H-NMR spectrum. It was found that the degree of cyclization in NR was a function of cyclization conditions. The thermal stability of cyclized DPNR increased with the degree of cyclization....
2007-01-01
British Library Electronic Table of Contents (United Kingdom)
Banana (Musa acuminata Colla AAA) peel extracts obtained in this work had a high capacity to scavenge 2,2-diphenyl-1-picrylhydrazyl (DPPH) and 2,2prime-azino-bis(3-ethylbenzothiazoline)-6-sulfonic acid (ABTS+) free radicals, and they were also good lipid peroxidation inhibitors. Acetone:water extracts were considerably more effective (compared with methanol, ethanol, acetone, water, methanol:water or ethanol:water) at inhibiting the peroxidation of lipids in the b-carotene/linoleic acid system or scavenging free radicals. However, aqueous extracts had a high capacity to protect lipids from oxidation in the thiobarbituric acid reactive substances (TBARS) test, as well as in the b-carotene bleaching assay. In addition, acetone:water most efficiently extracted all extractable components (54+-...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(lambda) and ...
2009-10-19
International Nuclear Information System (INIS)
In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C3H8O), water (H2O) and zinc acetate (Zn(CH3CO2)2) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(?) and reflectance R(?) spectra. Conjoint optical and thermal ...
2009-10-19
Investigation of lauric acid dopant as a novel carbon source in MgB{sub 2} wire
Energy Technology Data Exchange (ETDEWEB)
We fabricated lauric acid (LA) doped MgB{sub 2} wires and investigated the effects of the LA doping. For the fabrication of the LA-doped MgB{sub 2} wires, B powder was mixed with LA at 0-5 wt.% of the total amount of MgB{sub 2} using an organic solvent, dried, and then the LA-treated B and Mg powders were mixed stoichiometrically. The powder mixture was loaded into an Fe tube and the assemblage was drawn and sintered at 900 deg. C for 3 h under an argon atmosphere. We observed that the LA doping induced the substitution of C for the B sites in MgB{sub 2} and that the actual content of C increased monotonically with increasing LA doping level. The LA-doped MgB{sub 2} wires exhibited a lower critical temperature (T{sub c}), but better critical current density (J{sub c}) behavior in a high magnetic field: the 5 wt.% LA-doped sample had a J{sub ...
2010-11-01
Effects of initial microstructure and helium production on radiation hardening in F82H Steels
International Nuclear Information System (INIS)
Full text of publication follows: Fission neutron irradiation to steels doped with isotope boron-10 is frequently conducted to study effects of the helium production on mechanical properties. The intrinsic mechanical properties of F82H steels could have been changed due to the boron doping. Recently, we reported that co-doping with boron and nitrogen to F82H (F82H+B+N) improved the mechanical properties of F82H doped only with boron. The mechanical properties of F82H+B+N are successfully comparable with the non-doped F82H before irradiation. In order to evaluate the effects of initial microstructure and helium production on radiation hardening, F82H and F82H+B+N were irradiate d Specimens used in this study were standard F82H martensitic steels, F82H steels doped with 60 mass ppm 10B and 200 ppm N (F82H+10B+N) and F82H steels doped with 60 ...
2007-12-10
Dielectric dispersion study of Mn-doped PLZT (8/65/35)
International Nuclear Information System (INIS)
Mn-modified Pb0.92La0.08(Zr0.65Ti0.35)O3 (PLZT) was prepared chemically by a coprecipitate method using their respective nitrate salts and isopropoxides. Differential thermal analysis (DTA) and X-ray analysis clearly show the formation of PLZT single rhombohedral phase for samples calcined beyond 750 C. Uniform grain distribution was observed from scanning electron microscopic (SEM) studies and grain size was found to increase with Mn doping up to x=0.08 and then decreased. Dielectric measurement shows the decrease in peak transition temperature (TC) with Mn doping up to x=0.12 and then increase along with a sharp rise in dielectric maxima. A diffuse dielectric dispersion is observed in all the compositions. A detailed dispersion study was carried out using the Vogel-Fulcher empirical relation, a universal relaxation law and the Havriliak-Negami function. The Vogel-Fulcher relation fitting parameters of activation energy and freezing ...
2009-07-01
British Library Electronic Table of Contents (United Kingdom)
Fe-doped TiO2 hollow spheres (Fe-THs) were synthesized by sol?gel process using carbon spheres as templates. The prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV?vis diffuse reflectance spectrum (DRS), N2 adsorption?desorption isotherms, Electron paramagnetic resonance (EPR) spectroscopy and Photoluminescence emission spectroscopy (PL). UV?vis spectra showed that Fe3+ doping could extend the absorption edge to the visible region. EPR spectra showed that Fe3+ was incorporated into the crystal lattice of TiO2, which could inhibit the recombination of photo-induced electron?hole pairs and improve the photocatalytic activity. The photocatalytic activities of the prepared samples were evaluated for the degradation of dye Reactive Brillia...
2011-01-01
Thermoluminescence studies in lead doped KCl and KBr crystals
International Nuclear Information System (INIS)
Lead is known to enter substitutionally in divalent state when doped in alkali halides. When irradiated at room temperature these lead centers (Pb"+"+) act as traps for electrons knocked off from the halogen ions and become Pb"+ and Pb"0 (for large doses of irradiation). These changes could be followed in the optical absorption studies. These lead-doped crystals after X-ray irradiation yield a thermoluminescence output smaller than that observed in 'pure' crystals. However, two new glow peaks are observed in additions to those due to F-centers. In KCl : Pb and Kbr : Pb crystals part of the F-center glow preceds the new glow peaks. The new peaks are attributed to the Pb"+ and Pb"0 centers. The glow peak temperatures and trap depths for these peaks an obtained by total-curve fitting method are reported. (author).
1975-02-12
Synthesis and characterization of undoped and TM (Co, Mn) doped ZnO nanoparticles
British Library Electronic Table of Contents (United Kingdom)
Antibacterial activity of Transition metals (Mn, Co) doped ZnO nanopowders prepared by a DC thermal plasma method against Escherichia coli and Staphylococcus aureus are investigated. The phase and morphology studies have been carried out by X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) respectively. All the samples of the present investigation are found to have hexagonal wurtzite structure and crystallite sizes are found to vary from 25nm to 30nm. Our bacteriological study showed the enhanced antibacterial activity of transition metals doped ZnO nanoparticles than undoped ZnO indicating the great potential of ZnO nanoparticles in relevant clinical and biomedical applications.
2011-01-01
Silicon oxide conductivity of hydrogen ion implanted polysilicon thin film transistors
Energy Technology Data Exchange (ETDEWEB)
The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10{sup 17} to 3 x 10{sup 19} cm{sup -3}. (Author).
1996-10-01
Silicon oxide conductivity of hydrogen ion implanted polysilicon thin film transistors
International Nuclear Information System (INIS)
The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10"1"7 to 3 x 10"1"9 cm"-"3. (Author).
British Library Electronic Table of Contents (United Kingdom)
Abstract A fabrication process for Emitter-Wrap-Through solar cells on monocrystalline material with high quality gap passivation by wet thermal silicon dioxide is investigated. Masking and structuring steps are performed by screen-printing technology. Via-holes are created by an industrially applicable high-speed laser drilling process. The cell structure features a selective emitter structure fabricated in a single high temperature step: a highly doped emitter at the via-holes and the rear side, allowing for a low via-hole resistivity as well as a low resistivity contact to screen-printed pastes, and a moderately doped front side emitter exhibiting high quantum efficiency in the low wavelength range. Therefore a novel approach is applied depositing either doped or undoped PECVD silicon d...
2011-01-01
Luminescence spectroscopy of Er3+-doped and Er3+, Yb3+-codoped LaPO4 single crystals
International Nuclear Information System (INIS)
LaPO4 single crystals lightly doped with Er3+, and codoped with Er3+ and Yb3+ have been grown by spontaneous nucleation in a lead phosphate flux. Absorption and luminescence spectra have been measured in the visible and near-IR regions and the excited state dynamics has been studied upon pulsed laser excitation. The obtained results have allowed the evaluation of the effective emission cross-sections around 1.5 ?m, that have been found to be similar to important oxide laser crystals doped with Er3+. Efficient visible upconversion has been observed upon excitation at 980 nm in the codoped crystals. This behaviour is attributed to Yb3+-Er3+ energy transfer processes.
2009-05-01
Influence of laser power on the properties of laser doped solar cells
British Library Electronic Table of Contents (United Kingdom)
In recent years, increased attention has been focused on the use of lasers in different fabrication steps of solar cells, in particular laser doping to form emitter and/or selective emitter. In this method the laser energy is used to melt silicon, allowing the diffusion of dopant atoms to occur in the liquid phase. The main advantage of this method is the localised nature of the laser beam, which melts and diffuses a limited area without heating the bulk, therefore reducing the possible degradation associated with high temperature processes. At the University of New South Wales a novel laser doping method was developed, which combines the formation of the selective emitter with a self-aligned metallisation pattern. Despite achieving high efficiencies, concerns arose regarding the adhesion ...
2011-01-01
Impedance spectroscopy study with H-doped ammonium uranylphosphate self supported membranes
Energy Technology Data Exchange (ETDEWEB)
Equivalent circuit and electrical parameters for H-doped NH{sub 4}UO{sub 2}PO{sub 4}.3H{sub 2}O self supported membranes have been determined by impedance spectroscopy. The measurements were carried out with a dry membrane, at different temperatures, and a wet membrane in contact with different electrolyte solutions. Resistance values for the dry membrane decrease with temperature increase, which agrees with the weak protonic character of the H-doped ammonium uranylphosphate. On the other hand, differences in the electrical parameters, depending on the electrolyte considered were also obtained and are attributed to different conduction mechanisms. (Author).
1995-01-01
Effects of manganese doping on properties of sol-gel derived biphasic calcium phosphate ceramics
British Library Electronic Table of Contents (United Kingdom)
We have investigated the effect of manganese (Mn) doping on properties of nanosized biphasic calcium phosphate powders and their dense bodies. Manganese levels of 0.6, 1.3, 1.9, 4.3, 7.0 and 11.9at.% were successfully incorporated into biphasic calcium phosphate via a sol-gel route. The prepared powders were calcined at temperatures of 500-1200^oC. The X-ray diffraction analysis revealed that a mix phase comprising of hydroxyapatite and @b-tricalcium phosphate were present, however the content of each phases in the structure was affected by the Mn content. The studies found that the largest portion of @b-tricalcium phosphate was detected at 4.3at.% Mn doping. The incorporation of Mn has also greatly increased the crystallinity of the biphasic calcium phosphate powder due to progressive den...
2011-01-01
Application of neutron transmutation doping method to initially p-type silicon material
Energy Technology Data Exchange (ETDEWEB)
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.
2009-07-15
Application of neutron transmutation doping method to initially p-type silicon material
International Nuclear Information System (INIS)
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.
2008-05-12
British Library Electronic Table of Contents (United Kingdom)
The core-shell luminol-doped SiO2 nanoparticles were synthesized and immobilized on the surface of chitosan film coating graphite electrode by the self-assembled technique. Then, a novel electrogenerated chemiluminescence (ECL) sensor for pyrogallol was developed based on its ECL enhancing effect for the core-shell luminol-doped silica nanoparticles. The ECL analytical performances and the sensing mechanism of this ECL sensor for pyrogallol were investigated in detail. The corresponding results showed that: compared with the conventional ECL reaction procedures by luminol ECL reaction system, the electrochemical (EC) reaction of pyrogallol and its subsequent chemiluminescence (CL) reaction occurred in the different spatial region whilst offering a high efficiency to couple the EC with the ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
Nylon 6 and nylon 66 films have been treated with aqueous sulfonated aromatic compound (SAC) solutions at concentrations ranging from 0.005 to 1.0 wt%. SAC uptakes at different treatment concentrations were measured and found to follow a BET isotherm. The surface morphologies of nylon film samples, including the original and SAC-treated films, have been characterized by atomic force microscopy (AFM). For untreated nylon 6 and nylon 66 films, AFM images show a randomly distributed fibrillar surface structure. Characteristic widths of fibrils in the nylon 66 and 6 films were 150-225 and 75-150 nm, respectively. For SAC-treated nylon films, the AFM images revealed that the surfaces of the films became covered with nodule-like features having a diameter range of 25-60 nm. AFM analysis provides evidence that SAC treatment deposited a surface coating on nylon films. AFM images of SAC-treated nylon films suggest a mechanism for stain resistance in which the SAC first ...
1995-08-01
Energy Technology Data Exchange (ETDEWEB)
A precise admixtures system is needed when using high-volume fly ash concrete as fresh concrete occasionally undergoes rapid slump loss after mixing, which can cause problems with casting, pumping and finishing of the concrete in hot weather. This paper provided details of a study conducted to implement high-volume fly ash concrete technology in India. Different families of admixtures were investigated to determine their water reduction capacities. A set-retarding admixture was used in some of the concrete mixtures in order to determine its efficacy. An Indian Portland cement was used to create a total of 22 different concrete mixtures. Four different fly ashes were used to replace portions of the concrete. The slump of the fresh concrete mixture was monitored for 2 to 3 hours. Unit weight and temperature of the concrete was measured. Specimens were cast in steel moulds in order to determine the compressive strength and unit weight of the hardened concrete. The concretes were demoulded ...
2006-07-01
Stable p-channel polysilicon thin film transistors fabricated by laser doping technique
Energy Technology Data Exchange (ETDEWEB)
In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in ...
2005-09-01
Stable p-channel polysilicon thin film transistors fabricated by laser doping technique
International Nuclear Information System (INIS)
In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate ...
2005-09-01
Solid state and materials research: metal-semiconductor interactions
International Nuclear Information System (INIS)
This section of the report is concerned with the study of the metallisation, oxidation and doping of materials which are of importance to the micro-electronics industry. The Van de Graaff accelerator and radioactive tracers are used for studying surface and sub-surface behaviour of these materials.
Self-organization of nickel atoms in silicon
British Library Electronic Table of Contents (United Kingdom)
We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.
2011-01-01
Preparation of nanostructure Ni doped CdO thin films by sol gel spin coating method
British Library Electronic Table of Contents (United Kingdom)
The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The Eg values of the CdO films were found to be in the range of 2.26?2.60?eV. The Eg values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size o...
2011-01-01
Preparation and characterization of Co-doped BaTiO{sub 3} nanosized powders and ceramics
Energy Technology Data Exchange (ETDEWEB)
The Co-doped BaTiO{sub 3} nanosized powders and ceramics were prepared via the sol-gel process. The powders and ceramics were characterized by methods of XRD, SEM and TEM. The dielectric properties of the ceramics were also determined by these methods. The influence of sintering temperature, sintering time and Co concentration on the microstructure and dielectric properties was discussed. The results revealed that the powders were in nanometer scale (30-50 nm) and were mainly composed of cubic BaTiO{sub 3} phase and small amount of BaCO{sub 3}. After sintering, both the cubic BaTiO{sub 3} and BaCO{sub 3} were transformed into tetrahedron BaTiO{sub 3}. The sintering temperatures of the Co-doped BaTiO{sub 3} ceramics decreased (about 100 deg. C) and the Curie temperatures of the ceramics were then moved to lower temperature. In addition, the dielectric constant of the ceramics doping with Co was higher than that of the pure ...
2006-08-25
Effect of dysprosium doping on the optical properties of SrS:Dy,Cl phosphor
International Nuclear Information System (INIS)
The fundamental optical properties of dysprosium (Dy) doped strontium sulfide bulk samples for various dopant concentrations from 0.1 to 1.0 at.% were investigated by X-ray diffraction (XRD), electron paramagnetic resonance spectroscopy (EPR), room temperature photoluminescence (PL), photoluminescence excitation (PLE) and diffuse reflectance spectroscopy (DRS). Investigations by electron paramagnetic resonance yielded the state of Dy in the sample as Dy3+. An additional ESR line due to F+ center was observed. The PL emission spectrum consisted of several intense lines and a number of weaker ones which were identified as transitions between energy levels of Dy3+. The optimum doping concentration for maximum intensity was found to be 0.25 at.%. Blue shift of the absorption edge energy and red shift of the PLE spectrum were observed with increasing doping concentration. The former is due to Burstein-Moss (BM) effect and the ...
2010-08-13
Effect of boron doping in the carbon support on platinum nanoparticles and carbon corrosion
Energy Technology Data Exchange (ETDEWEB)
Carbon supported catalysts can lose their activity over a period of time due to the sintering of the nanometer-sized catalyst particles. The sintering of metal clusters on carbon supports can occur due to the weak interaction between the metal and the support and also due to the corrosion of carbon, especially in fuel cell electrocatalysts. The sintering may be reduced by increasing the interaction between the metal and the support and also by increasing the corrosion resistance of carbon supports. In an effort to mitigate the growth of the nanoparticles, carbon-substituted boron defects were introduced in the carbon lattice. The interaction between the Pt nanoparticles on the pure and boron-doped carbon supports was examined using X-ray photoelectron spectroscopy (XPS). The results indicate that the interaction between the Pt nanoparticles and the boron-doped carbon support was slightly stronger than the interaction between the Pt ...
2009-07-15
Effect of Li-Al co-doping on the energy gaps of MgB2
International Nuclear Information System (INIS)
We studied the effects of co-doping with Li and Al on the energy gaps of MgB2 by performing point-contact Andreev-reflection spectroscopy (PCAR) in polycrystalline Mg1-x(Al?Li1-?)xB2 samples with x?0.4. Even though the lattice parameters and the critical temperature of the compound simply scale with the effective Al content ?x, irrespective of the Li concentration, the energy gaps do not. In particular, for a given effective Al content, the comparison with Mg1-y(Al)yB2 with y = ?x shows that the ? bandgap is practically the same while the ? bandgap is higher. A clear gap merging is observed in the most doped sample (x = 0.4) when Tc<20 K. The results are discussed within the two-band Eliashberg theory and compared to the outcomes of first-principles calculations of the effects of Li and Al co-doping on the electronic structure of magnesium diboride.
2009-02-01
Boron transient enhanced diffusion in heavily phosphorus doped silicon
Energy Technology Data Exchange (ETDEWEB)
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
1997-11-01
British Library Electronic Table of Contents (United Kingdom)
We propose and demonstrate experimentally a singlelongitudinal-mode (SLM) fiber double-ring laser using an Erbium-doped waveguide amplifier (EDWA), polarization controller (PC), and a fiber Fabry-Perot tunable filter (FFP-TF) into the ring cavity. In addition, the output power, side-mode suppression ratio (SMSR), and the stabilities of power and wavelength of the laser also are investigated. (Copyright 2007 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA)
2007-01-01
Ultrashallow P{sup +}/N junction formation by plasma ion implantation
Energy Technology Data Exchange (ETDEWEB)
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor ...
2000-12-01
Ultrashallow P"+/N junction formation by plasma ion implantation
International Nuclear Information System (INIS)
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor ...
2000-12-01
Real time neutron diffraction study on the reaction of AsF/sub 5/ with deuterated polyparaphenylene
Energy Technology Data Exchange (ETDEWEB)
The doping of deuterated polyparaphenylene (C/sub 6/D/sub 4/)sub(n) with AsF/sub 5/ has been investigated by real time neutron diffractometry at 100, 400 and 820 mbar AsF/sub 5/ pressure. The reaction appears to be diffusion controlled. Evidence for one doped phase with partial crystalline order was obtained. Structural considerations suggest two polymer chains plus one dopant ''string'' as the repetitive unit.
1982-07-01
Method of forming solar cells by grid contact isolation
Energy Technology Data Exchange (ETDEWEB)
A solar cell structure is produced by a method comprising baking the solar cell, containing a gridded top layer of cuprous sulfide formed on a base of cadmium sulfide, for 20 minutes to 10 hours, to produce a copper doped cds electrically insulating region in the cadmium sulfide base near the interface of the cuprous sulfide and the cadmium sulfide; removing the cuprous sulfide, and the copper doped cds insulating region not covered by the grid, to provide a bare cadmium sulfide areas; and then forming a cuprous sulfide layer on the exposed areas not covered by the grid.
1982-03-16
Luminescent lanthanide-ion doped nanoparticles as single-biomolecule labels and oxidant sensors
We report on the single-particle properties of lanthanide-ion doped oxide nanoparticles. We have demonstrated that their size can be accurately determined from their luminosity. The optically determined size distribution is in very good agreement with the distribution obtained from transmission electron microscopy (TEM). We also showed that the photobleaching of these nanoparticles is related to a reduction process and that we can use it to sense in a concentration-dependent manner the presence of an oxidant like H2O2. Finally, we propose a way to perform nanoparticle-protein coupling and to determine the protein-nanoparticle ratio at the single-particle level.
2007-02-01
Energy Technology Data Exchange (ETDEWEB)
Fuel cells based on solid oxides ('SOFC') are excellent alternative devices for power generation, when they are operated at high temperature, e.g. above 600 C. Having only fixed parts for the power generating part of the device is only one advantage of the fuel cell. Due to their unique design, these devices offer a maximum of efficiency for energy conversion compared to conventional power generating systems, which are mainly based on turbines. One aim of this thesis is the examination of alternative electrolyte and cathode materials for the SOFC applications at reduced temperatures, which means in the temperature range between 600 C and 750 C. For the first main task, several materials from the oxygen ion conducting electrolytes were selected. Different strontium and magnesium doped lanthanum gallate (LSGM) materials with additional transition metal doping were selected and prepared via two different preparation methods. The ...
2007-05-04
Helium atom doping of molybdenum and its influence on the radiation hardenings
International Nuclear Information System (INIS)
Experimental results on study of helium concentration influence on degree of molybdenum radiation hardening for various method of cyclotron doping differing in degree and damage character are presented. It is established that accumulation of helium atoms in molybdenum for simultaneous formation of radiation defects caused by low energetic primary-knocked atoms leads to higher degree of hardening than for high energetic ion irradiation. It is shown that with increase of helium atom concentration the degree of radiation hardening for the same level of damage increases. 4 refs.; 3 figs. (author).
1990-05-22
Fluorescence resonance energy transfer using lanthanide-ion doped oxide nanoparticles as donors
We have demonstrated fluorescence resonance energy transfer (FRET) between lanthanide-ion doped oxide nanoparticles acting as donors and organic acceptor molecules (Cy5). Due to the long nanoparticle lifetime and the large Stokes shift between nanoparticle absorption and emission, unambiguous and precise FRET measurements can be performed despite the presence of large free acceptor oncentrations. We determined FRET efficiencies as a function of Cy5 concentration which are in very good agreement with a multiple acceptor-multiple donor calculation.
2006-03-01
ESR study of X-ray irradiated rare earth (Ln) ion-doped glaserite and Ln ion-doped langbeinite
Energy Technology Data Exchange (ETDEWEB)
X-ray irradiation-induced paramagnetic radicals in rare earth (Ln) ion-doped glaserite and Ln ion-doped langbeinite were studied by means of ESR technique, aiming at developing the highly sensitive sensor for an ESR dosimetry. The samples were prepared by two kinds of procedures as follows. In one process, the glaserite (K{sub 3}Na(SO{sub 4}){sub 2}) matrix or the langbeinite (K{sub 2}Mg{sub 2}(SO{sub 4}){sub 3}) matrix were synthesized by heating the mixture of K{sub 2}SO{sub 4} and Na{sub 2}SO{sub 4} or the mixture of K{sub 2}SO{sub 4} and MgSO{sub 4} at 1023 K for 1 hour in He flow. The matrices obtained were mixed well with a fixed amount of Ln{sub 2}(SO{sub 4}){sub 3} (Ln=La, Eu, Gd, Lu) powder and heated at 1023 K for 1 hour in He flow. In the other process, the homogeneous mixture of a fixed amount of K{sub 2}SO{sub 4}, Na{sub 2}SO{sub 4} and Ln{sub 2}(SO{sub 4}){sub 3} powders or a fixed amount of K{sub 2}SO{sub 4}, MgSO{sub 4} and ...
1992-06-01
Point-contact Andreev-reflection spectroscopy in MgB{sub 2}: The role of substitutions
Energy Technology Data Exchange (ETDEWEB)
We summarize the results of point-contact Andreev-reflection (PCAR) spectroscopy in MgB{sub 2} doped by chemical substitutions, either magnetic (Mn) or non-magnetic (Al,C), obtained by us and by other groups in the last four years. Despite the variety of samples used (crystals and polycrystals of various origin) and some minor differences in the experimental techniques, these measurements have directly provided a complete and consistent picture of the effects of chemical substitutions on the gaps of MgB{sub 2} shedding light on other relevant parameters (scattering rates, DOSs) affected by doping. In Al-doped crystals and polycrystals, the gap amplitudes {delta}{sub {sigma}} and {delta}{sub {pi}} - obtained through a two-band Blonder-Tinkham-Klapwijk (BTK) fit of the Andreev-reflection conductance curves - decrease on increasing the Al content x (i.e. on decreasing the critical temperature of the contacts T{sub c}{sup A}), ...
2007-06-01
The liquid-phase synthesis of metal oxide nanoparticles in organic solvents under exclusion of water is nowadays a well-established alternative to aqueous sol-gel chemistry. In this article, we highlight some of the advantages of these routes based on selected examples. The first part reviews some recent developments in the synthesis of ternary metal oxide nanoparticles by surfactant-free nonaqueous sol-gel routes, followed by the discussion of the morphology-controlled synthesis of lanthanum hydroxide nanoparticles, and the presentation of structural peculiarities of manganese oxide nanoparticles with an ordered Mn vacancy superstructure. These examples show that nonaqueous systems, on the one hand, allow the preparation of compositionally complex oxides, and, on the other hand, make use of the organic components (initially present or formed in situ) in the reaction mixture to tailor the morphology. Furthermore, obviously even the crystal structure can differ from the corresponding ...
2008-07-15
Magnetic and transport properties of Ba_2Co_9O_1_4 and Ba_1_._9A_0_._1Co_9O_1_4 (A=La or Na)
International Nuclear Information System (INIS)
The valence and spin-state distributions of Co ions and the complex structure of antiferromagnetic Ba_2Co_9O_1_4 have led to the suggestion that doped Ba_2Co_9O_1_4 compounds may be good thermoelectric materials. We have checked this suggestion by measuring the magnetic properties as well as the transport properties of nominal Ba_1_._9A_0_._1Co_9O_1_4 (A=La or Na). We show that although all compounds are indicated to be single phase by powder X-ray diffraction analysis, they are all p-type polaronic conductors with low mobile-hole concentrations. Magnetic-susceptibility data of the parent and La-doped compounds give evidence of a second magnetic phase with ferromagnetic order setting in below 215 K; but this second phase is not seen in the Na-doped sample. We conclude that the structure is stabilized by oxidation and that cation exolution from the Ba_2Co_9O_1_4 structure creates cation vacancies that oxidize the high-spin ...
2010-11-01
Electronic properties of doped CuPc layers
Energy Technology Data Exchange (ETDEWEB)
Doping of molecular organic materials is important for the functionality of organic electronic devices as e.g solar cells. We investigated the doping behaviour of the acceptor molecules Cl{sub 2}-DCNQI and F{sub 16}CuPc incorporated into a CuPc matrix. In-situ XPS/UPS measurements were performed on coevaporated films. Doping by Cl{sub 2}-DCNQI was not successful. The molecule lost its chlorine atoms during thermal evaporation. For pristine F{sub 16}CuPc layers we observe a strong broadening of the photoemission features with increasing deposition rate indicating different domains probably of different molecular structure of differing electric interface potential. F{sub 16}CuPc incorporated into CuPc shows sharp photoemission features. With increasing F{sub 16}CuPc content Fermi level shifts are observed in both phases. In CuPc the maximum shift is about 0.45 eV towards the HOMO level indicating ...
2009-07-01
White oils for high voltage cables
Energy Technology Data Exchange (ETDEWEB)
''S-220'' white oil is used currently to impregnate and fill high voltage cables for 110-500 kilovolts; it has high electrical characteristics and meets production and use standards. High pressure and cooling problems, however, require filling cables with lower viscosity oils, while insulation needs still demand high viscosity. The authors developed a new white oil similar to S-220 using a neutral oil made in producing sulfonate additives. The process involved vacuum distillation, low-temperature paraffination, sulfation with oleum, neutralizing with ammonium hydroxide and simultaneous extraction of sulfo-salts and contact purification. The lowest content of aromatic hydrocarbons was sought. Dielectric qualities varied with viscosity. Satisfactory thermooxidational capability was found at 50/sup 0/C with an oil of no less than 50 mm/sup 2//sec viscosity. The final white oil had no more than 2% aromatic hydrocarbons, thus assuring ...
1982-10-01
British Library Electronic Table of Contents (United Kingdom)
The preparation of neem oil microemulsion and its acaricidal activity in vitro was developed in this study. In these systems, the mixture of Tween-80 and the sodium dodecyl benzene sulfonate (SDBS) (4:1, by weight) was used as compound surfactant; the mixture of compound surfactant and hexyl alcohol (4:1, by weight) was used as emulsifier system; the mixture of neem oil, emulsifier system and water (1:3.5:5.5, by weight) was used as neem oil microemulsion. All the mixtures were stired in 800rpm for 15min at 40^oC. The acaricidal activity was measured by the speed of kill. The whole lethal time value of 10% neem oil microemulsion was 192.50min against Sarcoptes scabiei var. cuniculi larvae in vitro. The median lethal time value was 81.7463min with the toxicity regression equations of Y=-6.0...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
Using a series of polycations synthesized by atom transfer radical polymerization (ATRP), we investigate the effects of the polymer charge density and hydrophobicity on salt-induced interdiffusion of polymer layers within polyelectrolyte multilayer (PEM) films. Polycations with two distinct hydrophobicities and various quaternization degrees (QPDMA and QPDEA) were derived from parent polymers of matched molecular weights poly(2-(dimethylamino)ethyl methacrylate) (PDMA) and poly(2-(diethylamino)ethyl methacrylate) (PDEA) by quaternization with either methyl or ethyl sulfate. Multilayers of these polycations with polystyrene sulfonate (PSS) were assembled in low-salt conditions, and annealed in NaCl solutions to induce layer intermixing. As revealed by neutron reflectometry (NR), polycations with lower charge density resulted in a faster decay of film structure with distance from the substrate. Interestingly, when comparing polymer mobility in QPDEA/PSS and QPDMA/PSS ...
2011-01-01
International Nuclear Information System (INIS)
Thin PTFE membranes were prepared by coating the PTFE dispersion onto the aluminum films. Thus the thin crosslinked PTFE (RX-PTFE) membranes were obtained by means of electron beam irradiation above the melting temperature of PTFE under oxygen-free atmosphere. The RX-PTFE membranes were pre-irradiated and grafted by styrene with or without divinylbenzene (DVB) in liquid phase. The existence of DVB accelerated the initial grafting rate. The styrene grafted RX-PTFE membranes are white colored, on the other hand, the styrene/DVB grafted RX-PTFE membranes are colorless. The proton exchange membranes (PEMs) were obtained by sulfonating the grafted membranes using chlorosulfonic acid. The ion exchange capacity (IEC) values of the PEMs ranging from 1.5 to 2.8 meq/g were obtained. The PEMs made from the styrene/DVB grafted membranes showed higher chemical stability than those of the styrene grafted membranes under oxidative circumstance.
2005-07-01
Energy Technology Data Exchange (ETDEWEB)
Reductive quenching of two photoexcited ruthenium(II) complexes by an anionic electron donor, 2,2{prime}-azinobis(3-ethyl-benzothiazoline-6-sulfonate) (ABTS{sup 2{minus}}), in aqueous solution was examined by laser flash photolysis before and after adding positively charged colloidal (250-{angstrom} diameter) alumina-coated silica particles. The kinetics and quantum yields of electron transfer with an anionic sensitizer, RuL{sub 3}{sup 4{minus}} (L = bathophenanthroline disulfonate), and a cationic one, Ru(bpy){sub 3}{sup 2+} (bpy = 2,2{prime}-bipyridine), were compared. Coadsorption of ABTS{sup 2{minus}} and RuL{sub 3}{sup 4{minus}} by the particles greatly enhanced the rate of quenching such that only the reaction occurring on the surfaces of the particles was observed. Electron transfer from ABTS{sup 2{minus}} to RuL{sub 3}{sup 4-*} occurred by a static (nondiffusional) process, and the quenching efficiency was maximal when there was close to monolayer coverage ...
1989-02-23
Metal coordination and selectivity with oxine ligands bound to silica polyamine composites
British Library Electronic Table of Contents (United Kingdom)
A series of oxine ligands, 5-X, 8 OH C9H6N (X = H, Cl, SO3H) have been covalently bound to a silica gel polyamine composite made from a silanized amorphous silica xerogel and poly(allylamine) (BP-1) by the Mannich reaction. The resulting modified composites WP-4(X = H), CB-1(X = Cl), and SB-1(X = SO3H) were characterized by elemental analysis, FTIR, and solid state CPMAS-13C-NMR. Using the analytical data before and after the ligand modification, the ligand loading could be estimated and in combination with metal ion capacities a metal to ligand ratio could be obtained. The composites WP-4 and CB-1 both showed ratios of approximately 1 : 1 while the sulfonate modified composite, SB-1, showed a metal to ligand ratio of 1 : 2. This is tentatively interpreted in terms of a zwitterionic oxine ...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
The application of foam in dealing with underground fire is well known due to its smothering action by cutting off air feed to burning fuel as well as acting as coolant. Besides plugging air feed to fire, water could be virtually reached to the fire affected areas much beyond the jet range as underground galleries with low roof restrict jet range of water. This method also enables a closer approach of a fire fighting team by isolating the toxic gases and smoke with a foam plug. The paper describes the development of high expansion foam composition and its application technology in order that foam plug method can be suitably utilized for combating mine fires in India. Three compositions were recommended for generation of high expansion foam: (a) 0.5% sodium/ammonium lauryl sulphate, 0.15 to 0.2% sodium carboxy methyl cellulose, 0.1% booster; (b) 0.5% sodium/ammonium lauryl sulfate, 0.12 to 0.15% alkaline solution of gum arabic, 0.1 to 0.2% ferrous gluconate; and (c) 0.35% ...
1989-09-01
We study the emission zone in a single-layer polymer light-emitting diode. The emission zone is found by studying the angular distribution of the electroluminescence. The emission is modeled by accounting for optical interference. We account for birefringence of the anode layer in our model. The active polymer was, however, found to be isotropic. The anode consists of a single-layer of the conducting polymer complex poly(3,4-ethylenedioxythiophene) and poly(styrene sulfonate) (PEDOT-PSS), with enhanced conductivity. As a cathode we use plain aluminum. By using only PEDOT-PSS we avoid having a thin metal layer or indium-tin-oxide as the anode in the path of the escaping light. The active material is a substituted polythiophene with excellent film forming properties. A comparison between the experimental and calculated angular distribution of light emission from a single-layered polymer light-emitting diode was shown to be in good agreement for the spectral region ...
2001-06-01
Energy Technology Data Exchange (ETDEWEB)
Ex situ and in situ fuel cell degradation of a sPAEK membrane were investigated. Post-mortem analyses of the aged membrane and of the degradation products eluted in water were carried out by NMR, IR, SEC and EDX. Ex situ agings were performed in a low concentration H{sub 2}O{sub 2} solution (0.07%) without any metallic catalyst. We exemplify that ex situ accelerated aging tests in such hydrogen peroxide solution are relevant to the chemical degradation in fuel cell. We have shown that a 500 h fuel cell test at moderate temperature (60 C) induces significant modifications on the macromolecules such as a 40% molecular weight reduction. Degradation appears heterogeneous and limited to the cathode side. The model compound approach developed in the previous article (Perrot et al.) has allowed the identification of the aging path in fuel cell. Phenolic and carboxylic acid chain ends have been identified as the main products resulting from polymer chain scissions. The ex situ lifetime (100 h) ...
2010-01-15
White luminescence of Tm-Dy ions co-doped aluminoborosilicate glasses under UV light excitation
International Nuclear Information System (INIS)
Tm3+ and Dy3+ ions co-doped aluminoborosilicate glasses were prepared in this study. The luminescence properties of the glasses were analyzed. A combination of blue, green, yellow, and red emission bands was shown for these glasses, and white light emission could be observed under UV light excitation. White light luminescence color could be changed by varying the excitation wavelength. Concentration quenching effect was investigated in this paper. Furthermore, the dependence of luminescence properties on glass compositions was studied. Results showed that the luminescence intensity changed with different network modifier oxides, while the white color luminescence was not affected significantly. - Graphical abstract: Tm3+ and Dy3+ ions co-doped aluminoborosilicate glasses, which emit white light under UV light excitation, were prepared. The dependence of luminescence properties on glass compositions was studied, and results showed that the white ...
2008-10-01
Transient enhanced diffusion of boron in silicon: The interstitial flux
Energy Technology Data Exchange (ETDEWEB)
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...
1997-11-01
Transient enhanced diffusion of boron in silicon: The interstitial flux
International Nuclear Information System (INIS)
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of silicon ...
1996-12-02
Synthesis and photoluminescence properties of Sm3+-doped LaMgB5O10 and GdMgB5O10
International Nuclear Information System (INIS)
Luminescence and reflection spectra as well as luminescence kinetics of the 1 mol% Sm3+-doped crystalline lanthanum magnesium meta borate (LaMgB5O10) and gadolinium magnesium meta borate (GdMgB5O10) were analyzed. Materials were synthesized by conventional solid state route and showed bright orange-red emission under UV excitation. Emission spectra contain sharp and well resolved Sm3+4G5/2#->#6HJ transitions indicating a strong crystal-field effect. In case of gadolinium compound energy transfer between Gd3+ and Sm3+ was detected. The luminescent kinetics of the Sm3+ in analyzed powders is characterized by single exponential decay and experimental values vary in the range 2.2-2.4 ms. - Research highlights: ? Phosphorescence of samarium-doped lanthanide magnesium meta borates. ? Bright and well resolved orange-red emission of Sm3+ under UV excitation. ? Energy transfer from Gd3+ to Sm3+ in gadolinium magnesium meta borate is observed. ? The ...
2011-07-01
Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In ...
Energy Technology Data Exchange (ETDEWEB)
Praseodymium-doped Bi{sub 4}Ti{sub 3}O{sub 12} (BIT) with various compositions of dopant, Pr (x = 0.5, 0.6, 0.7, 0.8) in Bi{sub 4-x}Pr{sub x}Ti{sub 3}O{sub 12} (BPT) were synthesized using a low temperature wet chemical technique. Powders calcined at 800 deg. C exhibit a single phase polycrystalline perovskite bismuth-layered structure. Randomly oriented plate-like structures were observed under Scanning Electron Microscope (SEM). A small amount of Pr doping (x = 0.5) resulted in dramatically reduced of grain size from 2 {mu}m to less than 50 nm in which Pr plays the role as a grain growth inhibitor. However, by increasing the composition of Pr, bigger grain size of up to 1 {mu}m was observed for x = 0.8 that was caused by diffusion of Pr in the perovskite structure. Dielectric properties showed that dielectric permittivity decreased with the addition of x = 0.50, and increasing with further addition of Pr. Dissipation factor (tan {delta}) ...
2009-05-05
International Nuclear Information System (INIS)
Praseodymium-doped Bi_4Ti_3O_1_2 (BIT) with various compositions of dopant, Pr (x = 0.5, 0.6, 0.7, 0.8) in Bi_4_-_xPr_xTi_3O_1_2 (BPT) were synthesized using a low temperature wet chemical technique. Powders calcined at 800 deg. C exhibit a single phase polycrystalline perovskite bismuth-layered structure. Randomly oriented plate-like structures were observed under Scanning Electron Microscope (SEM). A small amount of Pr doping (x = 0.5) resulted in dramatically reduced of grain size from 2 #mu#m to less than 50 nm in which Pr plays the role as a grain growth inhibitor. However, by increasing the composition of Pr, bigger grain size of up to 1 #mu#m was observed for x = 0.8 that was caused by diffusion of Pr in the perovskite structure. Dielectric properties showed that dielectric permittivity decreased with the addition of x = 0.50, and increasing with further addition of Pr. Dissipation factor (tan #delta#) followed the same trend as ...
2009-05-05
British Library Electronic Table of Contents (United Kingdom)
Praseodymium-doped Bi4Ti3O12 (BIT) with various compositions of dopant, Pr (x=0.5, 0.6, 0.7, 0.8) in Bi4-xPrxTi3O12 (BPT) were synthesized using a low temperature wet chemical technique. Powders calcined at 800degreeC exhibit a single phase polycrystalline perovskite bismuth-layered structure. Randomly oriented plate-like structures were observed under Scanning Electron Microscope (SEM). A small amount of Pr doping (x=0.5) resulted in dramatically reduced of grain size from 2mm to less than 50nm in which Pr plays the role as a grain growth inhibitor. However, by increasing the composition of Pr, bigger grain size of up to 1mm was observed for x=0.8 that was caused by diffusion of Pr in the perovskite structure. Dielectric properties showed that dielectric permittivity decreased with the ad...
2009-01-01
Single-crystal microwires based on doped Bi for anisotropic thermoelectric devices
International Nuclear Information System (INIS)
We have investigated the possibility to use a microwire of BiSn to design an anisotropic thermoelectric generator. The glass-coated microwire of pure and Sn-doped bismuth was obtained by the Ulitovsky method; it was a cylindrical single-crystal with orientation (1011) along the wire axis; the C3 axis was inclined at an angle of 70 degrees to the microwire axis. It is found that doping of bismuth wires with tin increases the thermopower anisotropy in comparison with Bi by a factor of 2 - 3 in the temperature range of 200-300 K. For a Bi microwire with a core diameter of 10 ?m with a glass coating with outer diameter of 35 ?m, the transverse thermopower is ? 150 ?V/(K*cm); for BiSn, 300 ?V/(K*cm). The design of an anisotropic thermogenerator based on BiSn microwire is proposed. The miniature thermogenerator will be efficient for power supply of devices with low useful current. In addition to the considerable thermopower anisotropy of BiSn wires ...
2011-07-07
Quality Management for Neutron Transmutation Doping of Silicon Ingot in HANARO
Energy Technology Data Exchange (ETDEWEB)
By using this doping method, silicon semiconductors with extremely uniform dopant distributions can be produced, and this is the dominant advantage of NTD compared with a conventional chemical doping. Good uniformity of a dopant concentration is usually required for high power applications such as thyristor (SCR), IGBT, IGCT and GTO and for special sensors. Achieving an accurate neutron fluence corresponding to a target resistivity as well as a uniform irradiation is the prime target of a neutron irradiation for NTD. Generally, in order to reach an accurate neutron fluence, a real time neutron flux is monitored by a neutron detector such as a Self-powered Neutron Detector(SPND). And, after an irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of a neutron activation sample that has been irradiated with a silicon ingot, and thus the SPND can be properly calibrated. Excellent irradiation uniformity and a ...
2007-10-15
International Nuclear Information System (INIS)
Synthesis of Eu-doped #beta#- and 15R-SiAlONs was studied by the ammonia nitridation of precursors derived from an #alpha#-Si_3N_4 fine powder dispersed in aluminum glycine gel with various Si/Al ratio and post-annealing in a nitrogen pressure furnace. The largest amount of #beta#-SiAlON was observed in the product at 1750 deg. C for Si/Al = 1/1 with small amounts of both #alpha#- and 15R-SiAlON impurities. The product showed two emissions at around 420 nm and 560 nm. The emission intensities decreased with increasing amount of #beta#-SiAlON. The former and latter emissions were assigned to Eu"2"+ in the 15R- and #alpha#-SiAlONs impurities. A mixture of Eu-doped 15R-SiAlON with #alpha#-Al_2O_3 impurity was obtained for Si/Al = 1/6, using AlN together with Al(NO_3)_3.9H_2O in a 2/1 atomic ratio as the aluminum source. It showed a bluish-white emission at 450 nm under 254 nm radiation.
2009-11-13
Lithium intercalation in porous carbon electrodes
Energy Technology Data Exchange (ETDEWEB)
Carbons derived from the phase separation of polyacrylonitrile/solvent mixtures were investigated as lithium intercalation anodes for rechargeable lithium-ion batteries. The carbon electrodes have a bulk density of 0.35-0.5 g/cm{sup 3}, relatively low surface areas (< 10 m{sup 2}/g), and micron-size cells. Pyrolysis temperature influences the reversible lithium intercalation and the irreversible capacity (associated with the formation of the passivating layer). Carbon electrodes pyrolyzed at 600{degrees}C have first-cycle capacity as high as 550 mAh/g as well as large irreversible capacity, 440 mAh/g. Electrodes prepared at 1050{degrees}C have reversible capacities around 270 mAh/g with relatively lower capacity losses (120 mAh/g). Doping the organic precursors with phosphoric acid, prior to pyrolysis at 1050{degrees}C, leads to carbon electrodes with reversible capacities as high as 450 mAh/g. The capacity of doped carbon increased with ...
1995-04-01
Carbon nanotube coating silicon doped with Cr as a high capacity anode
Energy Technology Data Exchange (ETDEWEB)
Effects of dopant and coating carbon nanotube on anodic performance of Si were studied for metallic anode Li ion rechargeable battery with large capacity. Although the large Li intercalation capacity higher than 1500mAhg{sup -1} is exhibited on pure Si, it decreased drastically with increasing cycle number. Increasing the electrical conductivity by doping Cr or B is effective for increasing the initial capacity and the cycle stability of Si for Li intercalation. Coating semiconductive Si with the carbon nanotube by decomposition of hydrocarbon is effective for increasing the cycle stability, though the initial Li intercalation capacity slightly decreased. Conducting binder is also important for increasing the cycle stability and it was found that Li intercalation capacity higher than 1500mAhg{sup -1} can be sustained by using poly vinyliden fruolide. Consequently, reversible Li intercalation capacity of 1500mAhg{sup -1} was successfully sustained after 10th cycles ...
2005-08-26
Al[sub 0. 3]Ga[sub 0. 7]As/GaAs heterojunction tunnel diode for tandem solar cell applications
Energy Technology Data Exchange (ETDEWEB)
A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.
1994-06-30
VC- and Cr{sub 3}C{sub 2}-doped WC-NbC-Co hardmetals
Energy Technology Data Exchange (ETDEWEB)
This study compares the microstructure and mechanical properties of plain and 0.9 or 3.6 wt% VC- or Cr{sub 3}C{sub 2}-doped WC-12 wt% Co hardmetals with 40 wt% NbC, prepared by pulsed electric current sintering (PECS) in the solid state for 4 min at 1240 deg. C and conventional pressureless liquid phase sintering (CS) for 1 h at 1420 deg. C. The addition of VC or Cr{sub 3}C{sub 2} was found to inhibit grain growth of the residual WC grains, whereas the size of the solid solution (Nb,W,V/Cr)C grains was hardly influenced. The type of grain growth inhibitor and densification temperature however, strongly influenced the composition of the NbC solid solution formed, which was thermodynamically and experimentally assessed.
2008-09-22
International Nuclear Information System (INIS)
The intensity of erbium up-conversion luminescence could be limited by a saturation effect due to increased pump power. We studied the luminescence saturation of the 550 nm emission on erbium-doped, SiO_2-TiO_2 sol-gel powders under pulsed excitation at 979 and 1532 nm. From the latter, the up-converted luminescence intensity decreased with increasing excitation power, whereas no saturation was observed at 979 nm excitation. We proposed that the saturation effect is determined by the pump power, the erbium content and the lifetime of the corresponding first excited states at different pumping schemes.
2010-12-01
Tunable erbium-doped fiber ring laser for applications of infrared absorption spectroscopy
British Library Electronic Table of Contents (United Kingdom)
We fabricate a low noise erbium-doped fiber ring laser that can be continuously tuned over 102nm by insertion of the fiber Fabry-Perot tunable filter (FFP-TF) in the ring cavity with a novel cavity structure and the optimal gain medium length. As an application of this fiber ring laser, we performed the absorption spectroscopy of acetylene (13C2H2) and hydrogen cyanide (H13C14N) and measure the absorption spectra of more than 50 transition lines of these gases with an excellent signal to noise ratio (SNR). The pressure broadening coefficients of four acetylene transition lines are obtained using this fiber ring laser and an external cavity laser diode.
2007-01-01
British Library Electronic Table of Contents (United Kingdom)
Direct visualization of rare earths in @a- and @b-SiAlON unit-cells is performed through Z-contrast imaging technique in an aberration-corrected scanning transmission electron microscope. The preferential occupation of Yb and Ce atoms in different interstitial locations of @b-SiAlON lattice is demonstrated, yielding higher solubility for Yb than Ce. The triangular-like host sites in @a-SiAlON unit cell accommodate more Ce atoms than hexagonal sites in @b-SiAlON. We think that our results will be applicable as guidelines for many kinds of rare-earth-doped materials.
2011-01-01
Thermoluminescence of irradiated RbCl and RbCl:Sn crystals
International Nuclear Information System (INIS)
The thermoluminescence (TL) and emission of coloured RbCl and RbCl:Sn crystals are studied in the temperature range 300 to 560 K. The glow peaks responsible for F centres and tin centres in different valence states are identified using optical bleaching studies. The glow peaks are analysed using total curve fitting method and the kinetic parameters are determined. In moderately #gamma#-irradiated tin-doped RbCl crystals, the TL emission bands observed at 4.0, 3.6, and 2.2 eV are attributed to Sn"0, Sn"+, and Sn"- centers, respectively. A comprehensive energy level diagram depicting the various TL processes in these undoped and tin-doped RbCl crystals is proposed. (author).
Thermo-transferred thermoluminescence (TTTl) in potassium-yttrium double fluoride doped with terbium
International Nuclear Information System (INIS)
This paper presents results of studying the thermo-transferred thermoluminescence (TTTl) phenomenon in potassium-yttrium double fluoride doped with terbium (K_2YF_5_:Tb) at different impurity concentrations (0.8%, 0.95% and 0.99%). Previously to study the TTTl phenomenon, structural characterization and chemical composition of the materials were determined. The structural studies were conducted using a scanning electron microscope; meanwhile, chemical composition was analyzed using energy dispersive X-ray spectroscopy. Thermoluminescence kinetics was studied irradiating the samples with "1"3"7Cs gamma rays as well as with "9"0Sr/"9"0Y beta rays, analyzing the glow curves by the deconvolution method for obtaining the kinetic parameters. (Author)
2011-02-01
Energy Technology Data Exchange (ETDEWEB)
We report the influence of a small quantity of Cl[sub 2], which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si[sub 2]H[sub 6], on both the epitaxial growth rate and the B-doping properties for each Si and Si[sub 1-x]Ge[sub x] film. The small quantity of Cl[sub 2] inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si[sub 1-x]Ge[sub x]-SEG using Cl[sub 2], that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced. (orig.)
1993-02-01
Cadmium telluride single crystals were grown heavily doped with chloride by the THM method. The resulting crystals were n-type with free carrier concentrations of the order of 10('12)/cm at room temperature. Hall effect studies revealed room temperature mobilities between 30 and 350 cm('2)/v-sec and resistivites between 2 x 10('3) and 10('4) ohm-cm. Studies were made of the gamma and alpha counting characteristics of these crystals with metal, metal-semiconductor, and metal-insulator electrodes. It was found that the MIS and MSS structures resulted in significant improvement over the MS structures in counting, signal-to-noise and energy resolution.
1985-01-01
Superconductivity in cage doped fullerenes. Final report
Energy Technology Data Exchange (ETDEWEB)
Motivated by the discovery of superconductivity in alkali and alkaline earth fullerides, this program was undertaken both to understand the nature of and expand the range of materials demonstrating superconductivity. The first approach involved attempts to modify the fullerene cage by incorporating heteroatoms in the structure and the preparation and photophysical properties of nitrogen and sulfur doped fullerenes were studied in detail. The second approach involved examining the stoichiometry and effect of preparative conditions on the behavior of alkali, alkaline earth, lanthanide and mixed ion fullerides. In particular, the authors have elaborated on a technique for making such salts using liquid ammonia or aliphatic amines as solvents. Thirdly, modeling studies were undertaken to predict the properties of heterohedral fullerines and metal - C60 complexes, and theoretical guidelines were developed for understanding the reactivity of the fullerene cage to common ...
1996-08-26
Study of point defect detectors in Si
International Nuclear Information System (INIS)
The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well
1999-05-01
International Nuclear Information System (INIS)
By means of the light microscopy and by the measurement of the mechanical properties one investigated into the phase composition and the properties of Al-Mg-Ce and Al-Mg-Y system alloys. One plotted the isothermal cross sections of the mentioned systems under 430 and 275 deg C temperatures at up to 16% magnesium concentration and up to 0.7% yttrium concentration. One determined the yield limit and strength, the relative elongation of Al-Mg base hardened and deformed alloys containing 7.0-9.9% Mg and Ce, Y, Mn, Zr dopes upon ageing under 175, 200, 250 and 300 deg C temperatures within the ageing time ensuring the hardening maximum effect
Spectroscopy of gadolinium gallium garnet crystals doped with Y b3+ revisited
International Nuclear Information System (INIS)
The optical spectroscopy measurements of gadolinium gallium garnet (GGG) crystals doped with Yb show evidence of the presence of non-equivalent optical centers with very similar radiative decay rates. The energy level schemes of those centers have been determined on the basis of optical absorption, luminescence and Raman experiments. Crystal field fitting resulted in two sets of slightly different crystal field parameters for two non-equivalent Yb centers. Both sets of parameters describe perfectly the experimentally detected Y b3+ energy levels. Correlation between systematic trends in the experimental energy level schemes and crystal field parameters is discussed.
2010-06-30
Spectroscopic properties of Pr"3"+ doped LaWO_4Cl and La_3WO_6Cl_3
International Nuclear Information System (INIS)
The spectroscopic properties of Pr"3"+ doping two lanthanum chlorotungstate hosts: the orthorhombic LaWO4Cl (1-1) and the hexagonal La3WO4Cl6 (3-1), as well as those of PrWO4Cl and Pr3wO613 have been investigated. The simulations of the energy level schemes are carried out within the crystal field theory frame. Each simulation involves 7 free ion parameters and 14 non-zero crystal field parameters (cfps), corresponding to the C_s point symmetry of the site occupied by the rare earth, in both structures.
1992-01-01
Spectroscopic properties of Pr sup 3+ doped LaWO sub 4 Cl and La sub 3 WO sub 6 Cl sub 3
Energy Technology Data Exchange (ETDEWEB)
The spectroscopic properties of Pr{sup 3+} doping two lanthanum chlorotungstate hosts: the orthorhombic LaWO4Cl (1-1) and the hexagonal La3WO4Cl6 (3-1), as well as those of PrWO4Cl and Pr3wO613 have been investigated. The simulations of the energy level schemes are carried out within the crystal field theory frame. Each simulation involves 7 free ion parameters and 14 non-zero crystal field parameters (cfps), corresponding to the C{sub s} point symmetry of the site occupied by the rare earth, in both structures.
1992-01-01
SI/SIGE NANOWIRE ARRAYS FOR THERMOELECTRICITY
Environmental Research Database
ObjectivesFor thermoelectricity both low thermal conductivity and high electrical conductivity are required. High electrical conductivity should be established via a high carriers concentration and a high mobility.~%~The aim of this feasibility study is to investigate a method of modulation doping of Si nanowires in order to generate high carrier concentrations without the need for impurity doping, thus retaining high mobilities.~%~~%~The objectives are (in chronological order):~%~- reduction of the wire [continued...]DescriptionIn recent years, the increasing dependence of society on fossil fuels for socio-economical development has become a cause of great concern. The possibility of a reduced availability of fossil fuels, and the effect of these fuels on climate change, have encouraged research into alternative energy sources. Many of these alternatives are old ideas, implemented using modern techniques. This proposal plans ...
2008-01-30
Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE
International Nuclear Information System (INIS)
A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.
1990-07-16
Properties of transition metal-doped zinc chalcogenide crystals for tunable IR laser radiation
Energy Technology Data Exchange (ETDEWEB)
The spectroscopic properties of Cr{sup 2+}, Co{sup 2+}, and Ni{sup 2+}-doped single crystals of ZnS, ZnSe, and ZnTe have been investigated to understand their potential application as mid-IR tunable solid-state laser media. The spectroscopy indicated divalent Cr was the most favorable candidate for efficient room temperature lasing, and accordingly, a laser-pumped laser demonstration of Cr:ZnS and Cr:ZnSe has been performed. The lasers` output were peaked at {approximately} 2.35 {mu}m and the highest measured slope efficiencies were {approximately} 20% in both cases.
1995-03-17
Progress on polarized target materials with pure carbon background
A previous note reviewed methods for the paramagnetic doping of materials for spin-polarized solid targets and some of the history of attempts to apply those methods to hydrocarbons. Since the earlier work on hydrocarbons had yielded, at best, rather mediocre results, that note also speculated on some ways to extend and, possibly, to improve upon the earlier work. The sharpest focus was on the light (number of carbons less than six) alkanes, since these are the hydrocarbons that have the highest hydrogen contents ([approx gt] 17wt %) and therefore require the least degree of polarization to be interesting. This present note summarizes the subsequent work done, to date, exploring some of the issues related to the chemical doping method. The main areas of progress have been in the literature search, experimental results on glass formation by alkanes, and a polarizing test of a prototype'' hydrocarbon.
1993-03-24
Progress on polarized target materials with pure carbon background
Energy Technology Data Exchange (ETDEWEB)
A previous note reviewed methods for the paramagnetic doping of materials for spin-polarized solid targets and some of the history of attempts to apply those methods to hydrocarbons. Since the earlier work on hydrocarbons had yielded, at best, rather mediocre results, that note also speculated on some ways to extend and, possibly, to improve upon the earlier work. The sharpest focus was on the light (number of carbons less than six) alkanes, since these are the hydrocarbons that have the highest hydrogen contents ([approx gt] 17wt %) and therefore require the least degree of polarization to be interesting. This present note summarizes the subsequent work done, to date, exploring some of the issues related to the chemical doping method. The main areas of progress have been in the literature search, experimental results on glass formation by alkanes, and a polarizing test of a prototype'' hydrocarbon.
1993-03-24
Progress on polarized target materials with pure carbon background
Energy Technology Data Exchange (ETDEWEB)
A previous note reviewed methods for the paramagnetic doping of materials for spin-polarized solid targets and some of the history of attempts to apply those methods to hydrocarbons. Since the earlier work on hydrocarbons had yielded, at best, rather mediocre results, that note also speculated on some ways to extend and, possibly, to improve upon the earlier work. The sharpest focus was on the light (number of carbons less than six) alkanes, since these are the hydrocarbons that have the highest hydrogen contents ({approx_gt} 17wt %) and therefore require the least degree of polarization to be interesting. This present note summarizes the subsequent work done, to date, exploring some of the issues related to the chemical doping method. The main areas of progress have been in the literature search, experimental results on glass formation by alkanes, and a polarizing test of a ``prototype`` hydrocarbon.
1993-03-24
Preparation and photocatalytic property of pyrochlore Bi2Ti2O7 and (Bi, La) 2Ti2O7 films
British Library Electronic Table of Contents (United Kingdom)
Dopant-free Bi2Ti2O7 thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV?Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La3+ ions can act as a stabilizer of Aurivillus phase BLT and a grain?growth inhibitor in BLT thin films.
2008-01-01
Performance improvement of quantum dot infrared photodetectors through modeling
British Library Electronic Table of Contents (United Kingdom)
This paper presents a method to evaluate and improve the performance of quantum dot infrared photodetectors (QDIPs). We proposed a device model for QDIPs. The developed model accounts for the self-consistent potential distribution, features of the electron capture and transport in realistic QDIPs in dark and illumination conditions. This model taking the effect of donor charges on the spatial distribution of the electric potential in the QDIP active region. The model is used for the calculation of the dark current, photocurrent and detectivity as a function of the structural parameters such as applied voltage, doping QD density, QD layers, and temperature. It explains strong sensitivity of dark current to the density of QDs and the doping level of the active region. In order to confirm our...
2010-01-01
Optical properties and up-conversion of Pr"3"+ doped CdS nanoparticles in sol-gel glasses
International Nuclear Information System (INIS)
Silica glasses containing Pr"3"+ with and without CdS nanoparticles were prepared by sol-gel technique. The influence of CdS nanoparticles on Pr"3"+ doped glass was studied by absorption, photoluminescence and up-conversion. From the measured intensities of various absorption bands of these glasses, the Judd-Ofelt parameters ?_2, ?_4 and ?_6 have been evaluated. The radiative transition probability (A), radiative lifetime (?_R), branching ratio (?_R) and integrated emission cross-section (?_P) were calculated from excited states of "3P_1 and "3P_0 levels. The up-conversion emissions were found in the green, orange and red regions under 800 nm excitation with peaks 559, 612 and 688 nm respectively. On excitation with 370 nm also leads to similar green, orange and red regions.
2010-10-01
International Nuclear Information System (INIS)
The dependence of the inhibiting action of some surface active organic substances (SAOS) on the pitting- formation potential epsilonsub(p) has been investigated for the steel Kh25T. The study has been performed by potentiostatic method using the H_2SO_4 0.1-n-solution doped by NaCl, Na_2SO_4, in the presence of SAOS of different classes. As epsilonsub(p) shifts in positive direction from +0.6 to +1.1 V, the inhibiting action of the SAOS series (o-oxyquinoline) increases gradually till some critical potential above which SAOS favour pitting destruction of steel. This phenomenon should be considered in anodic protection in SAOS-doped solutions.
Occurence of active layer optical properties on some Lasing characteristics dye-doped Ch LC
Effect of a planar texture quality and its thickness on lasing spectrums and thresholds in dye-doped cholesteric liquid crystal (CLC) of steroid type is explored. Transition from the qualitative planar texture to the poor texture quality is accompanied by change of characteristic mode structures and by shift of barycentre in the long-wave side and the considerable growth of the lasing threshold. It is found that in the CLC texture created by substrates with perpendicular directions of orientation the stable single-mode lasing takes place. The nature of oscillated modes in such texture is caused by phase jump. The gained results show that in steroid CLC, unlike induced one, lasing spectrums is possible to feature with the coupled wave model. Key words: steroidal cholesteric liquid crystal, distributed feedback lasing, oscillation thresholds, phase defect of periodical structure, transmission and lasing spectra
2010-01-01
British Library Electronic Table of Contents (United Kingdom)
Yb-, Y-, Yb/Y-, and Yb/Nd-doped -SiAlON ceramics with 5-wt% barium aluminosilicate (BAS) were synthesized by hot pressing. Typical self-reinforced microstructures were obtained in all investigated -SiAlONs in spite of the type of doped cations. This is attributed to the incorporation of BAS, which could supply suitable liquid phase to promote the anisotropic growth of the -SiAlON grains. All the composites exhibited excellent high-temperature mechanical properties and thermal shock resistance due to the formation of a self-reinforced microstructure and the complete crystallization of BAS additive.
2011-01-01
Materials aspects of multijunction solar cells
Energy Technology Data Exchange (ETDEWEB)
Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).
1991-05-01
Energy Technology Data Exchange (ETDEWEB)
We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy){sub 3}{sup 2+} and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy){sub 3}{sup 2+}-doped silica nanoparticles and Au nanoparticles. UV-vis absorption spectroscopy, scanning electron microscopy (SEM), cyclic voltammetry and ECL were used to characterize the uniform growth of the multilayer film. Since Ru(bpy){sub 3}{sup 2+} could still maintain its ECL property when doped into the silica nanoparticles, the as-prepared multilayer film could be used as an effective ECL sensor, and the sensor showed high sensitivity and good stability.
2008-09-20
International Nuclear Information System (INIS)
We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy)_3"2"+ and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy)_3"2"+-doped silica nanoparticles and Au nanoparticles. UV-vis absorption spectroscopy, scanning electron microscopy (SEM), cyclic voltammetry and ECL were used to characterize the uniform growth of the multilayer film. Since Ru(bpy)_3"2"+ could still maintain its ECL property when doped into the silica nanoparticles, the as-prepared multilayer film could be used as an effective ECL sensor, and the sensor showed high sensitivity and good stability.
2008-09-20
British Library Electronic Table of Contents (United Kingdom)
We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy)32+ and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy)32+-doped silica nanoparticles and Au nanoparticles. UV-vis absorption spectroscopy, scanning electron microscopy (SEM), cyclic voltammetry and ECL were used to characterize the uniform growth of the multilayer film. Since Ru(bpy)32+ could still maintain its ECL property when doped into the silica nanoparticles, the as-prepared multilayer film could be used as an effective ECL sensor, and the sensor showed high sensitivity and good stability.
2008-01-01
International Nuclear Information System (INIS)
To study #beta# #reversible# #omega#-transformation in pseudo-#beta#-titanium alloy VT30, doped by hydrogen, methods of X-ray diffraction and thermodifferential analyses are used. It is established that in the process of heating of the hardened alloy from 0.004-0.1% H first formation and then dissolution of #omega# phase take place. An increase in hydrogen content to 0.1% decreases thermal effect of the processes and does not affect the temperature of #beta# #reversible# #omega#-transformation. Introduction of hydrogen in the concentration of 0.2% and higher suppresses completely #beta# #reversible# #omega# - transformation. A decrease in heating rate displaces #beta# #reversible# #omega#-transformation to lower temperatures.
Internal friction of amorphous Pd/sub 80/ Si/sub 20/ metal doped with hydrogen isotopes
Energy Technology Data Exchange (ETDEWEB)
Internal friction of amorphous Pd/sub 80/Si/sub 20/ metal doped with hydrogen or deuterium was measured with a specially designed apparatus using amorphous metal sheet as a part of the electric oscillating circuit. Two peaks in Q/sup -1/ curve are observed. Applying the peak shift method to the first Snoek-like peak, we can determine the relaxation time from which the microdiffusion coefficient can be calculated. The obtained microdiffusion coefficient is about 10/sup -14/ m/sup 2//s at 200 K, being comparable with the macrodiffusion coefficient obtained from the releasing method. It can, however, not elucidate the hydrogen isotopic effect on the peak temperature of Q/sup -1/ curve, the activation energy for relaxation and the relaxation time from the present work because of the broadness of obtained Q/sup -1/ curve.
1983-02-01
International Nuclear Information System (INIS)
An effective method of enhancing charge injection and electroluminescence efficiency of polymer-based light emitting diode is introduced. Spin-coated films of poly (N-vinylcarbazole) blended with electron-transport material (Bu-PBD), laser dye (Coumarin6), and the typical supporting electrolyte (tetraethylammonium perchlorate; TEAP) were examined and it was found that the injection current and luminance of the light emitting diode doped with TEAP were enhanced dramatically after heat-treatment at 80 deg. C and appropriate biasing in an external electric field of 1.5x10"8 V/m at this temperature. The thermally stimulated current (TSC) was also measured to investigate the relaxation process of ionic space charges in the films. The relaxation times of ionic polarization were found to be related to the cation size of the electrolyte. And the relaxation time becomes long enough by the use of TEAP doping.
2003-08-22
Energy Technology Data Exchange (ETDEWEB)
Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)
1981-01-01
Enhancement in transition temperature and upper critical field of CeO0.8F0.2FeAs by yttrium doping
We report significant enhancement in superconducting properties of yttrium substituted Ce1-xYxOFFeAs superconductors. The polycrystalline samples were prepared by two step solid state reaction technique. X-ray diffraction confirmed tetragonal ZrCuSiAs structure with decrease in both a and c lattice parameters on increasing yttrium substitution (with fixed F content). With smaller ion Y in place of Ce, the transition temperature increased by 6 K. Yttrium doping also lead to higher critical fields as well as broader magnetization loops, particularly at elevated temperature.
2009-12-01
British Library Electronic Table of Contents (United Kingdom)
A electrogenerated chemiluminescence (ECL) sensor for itopride was developed based on tris(2,2-bipyridyl)ruthenium(II) (Ru(bpy)32+)-doped silica (RuDS) nanoparticles/biopolymer chitosan composites membrane modified glassy carbon electrode (GCE). The RuDS nanoparticles (52+-5nm) were prepared by a modified Stber synthesis method and were characterized by electrochemical, fluorometric and transmission electron microscopy technology. The Ru(bpy)32+ encapsulation interior of the silica nanoparticle maintains its electrochemical activities and also reduces Ru(bpy)32+ leaching from the silica matrix when immersed in water due to the electrostatic interaction. The ECL analytical performances of this ECL sensor for itopride based on its enhancement ECL emission of Ru(bpy)32+ were investigated in d...
2008-01-01
Electrical properties of antimony doped PLZT ceramics prepared by mixed-oxide route
International Nuclear Information System (INIS)
Ferroelectric [Pb_0_._9_2(La_1_-_zSb _z)_0_._0_8][Zr_0_._6_0Ti_0_._4_0]O_3 for z = 0.0, 0.3, 0.6, 0.9 and 1 were prepared from their constituent oxides by a solid state reaction technique. The powders were calcined in the temperature range of 1000 deg. C for 6 h. Phase formation, crystal structure and lattice parameter were investigated by X-ray diffraction (XRD) technique. The compacts were sintered at 1250 deg. C for 2 h and their dielectric, ferroelectric and conductive properties were measured. The ferroelectric behavior of the doped samples was studied from their hysteresis loop.
2006-12-21
Collection of athermal phonons into doped Ge thermistors using quasiparticle trapping
Energy Technology Data Exchange (ETDEWEB)
We have developed a low-temperature particle detector that uses a novel quasiparticle trapping mechanism to funnel athermal phonon energy from an 80 mg Ge absorber into a 1.6 mg doped Ge thermistor via a superconducting Al film. We report on pulse height spectra obtained at 320 mK by scanning a {sup 241}Am alpha source along the device, and show that up to 20% of the energy deposited in the Ge absorber by a 5.5 MeV alpha particle interaction can be collected into a thermistor via quasiparticle trapping. We show that this device is sensitive to the position of an alpha particle interaction in the Ge absorber for interaction distances of up to 5 mm from a quasiparticle trap.
1995-05-15
Application of neutron transmutation doping method to initially p-type silicon material
British Library Electronic Table of Contents (United Kingdom)
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
The effects of TANOL radical have been examined on chemical shifts and relaxation rates of /sup 109/Ag NMR in aqueous solution of silver salts. The silver ion in aqueous solution is found to coordinate with TANOL radical. A small amount of TANOL is added as a doping agent(0.020M), since /sup 109/Ag signals are obtained for (1.0M) silver ion within 30 minutes. The /sup 109/Ag chemical shifts of silver salt in aqueous solutions were found within the range of 0 to -1000 ppm relative to that of 1.0M AgNo/sub 3/.
1982-09-01
International Nuclear Information System (INIS)
The rare earth antimonates RE_3Sb_5O_1_2 constitute an isostructural series, where the rare earth site symmetry is S_4. The spectroscopic properties of pure or doped compounds of this family are studied in order to derive their energy level schemes and to simulate them through the crystal field theory, by using the approximated D_2_d potential. The paramagnetic susceptibilities are calculated with the derived wavefunctions and compared to experiment.
1990-09-01
The effects of helium on the embrittlement and hardening of boron doped EUROFER97 steels
International Nuclear Information System (INIS)
The role of helium in a process of embrittlement and hardening of RAFM steels was investigated in EUROFER97 based experimental heats, ADS2, ADS3 and ADS4, that were doped with different contents of natural B and the separated 10B-isotope (0.008-0.112 wt.%). The neutron irradiation of the boron doped and the reference RAFM steels was performed in the Petten High Flux Reactor up to 16.3 dpa at different temperatures between 250 and 450 deg. C. The embrittlement behaviour and hardening was investigated by instrumented Charpy-V tests with subsize specimens. Irradiation lead to generation of 84, 432 and 5580 appm He in ADS2, ADS3 and ADS4 steels, respectively. At irradiation temperatures Tirr ? 350 deg. C the boron doped steals show progressive embrittlement and reduction of toughness with increasing helium amount. The analysis of the hardening vs. embrittlement behaviour at Tirr ? 350 deg. C reveals hardening nature of ...
2008-12-01
Suppression of afterglow in CsI:Tl by co doping with Eu"2"+-II: Theoretical model
International Nuclear Information System (INIS)
The mechanism for afterglow suppression in codoped CsI:Tl,Eu reported in the preceding paper was investigated by combined radioluminescence and thermoluminescence experiments. Model rate equations informed by these experiments were employed to simulate afterglow. It was found that codoping with europium introduces deep electron traps, with room-temperature glow peaks, that effectively scavenge the electrons from shallow traps associated with thallium, thus suppressing afterglow in the time domain of tens of milliseconds.
2006-03-15
Spin fluctuation changes in Ge doped YbPd_2Si_2
International Nuclear Information System (INIS)
In YbPd_2Si_2, the valence of Yb is very close to 3+. Ge substitution of Si induces a negative pressure effect and the valence of Yb decreases. For the low Ge concentrations studied, the spin fluctuation temperature T_s_f increases and #chi#4f, the Yb derived 4f susceptibility, obeys the scaling law #chi#4f(T)=F(T/T_s_f). (orig.).
Spectral analysis of Pr3+-, Sm3+- and Dy3+-doped transparent GeO2-BaO-TiO2 glass ceramics
British Library Electronic Table of Contents (United Kingdom)
In this paper, we present the photoluminescence properties of Pr3+-, Sm3+- and Dy3+-doped germanate glasses and glass ceramics. From the X-ray diffraction measurement, the host glass structure was determined. These glasses have shown strong absorption bands in the near-infrared (NIR) region. Compared to Pr3+-, Sm3+- and Dy3+-doped glasses, their respective glass ceramics have shown stronger emissions due to the Ba2TiGe2O8 crystalline phase. For Pr3+-doped glass and glass ceramic, emission bands centered at 530nm (3P03H5), 614nm (3P03H6), 647nm (3P03F2) and 686nm (3P03F3) have been observed with 485nm (3H43P0) excitation wavelength. Of them, 647nm (3P03F2) has shown bright red emission. Emission bands of 4G5/26H5/2 (565nm), 4G5/26H7/2 (602nm) and 4G5/26H9/2 (648nm) for the Sm3+:glass and gl...
2009-01-01
International Nuclear Information System (INIS)
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)
2005-09-01
Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout
International Nuclear Information System (INIS)
2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEB). SEB parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p"+ plug modification approach for SEB hardening of power MOSFETs is validated with simulations on actual device structures.
1995-07-17
STM studies of CDWs in pure and doped transition metal chalcogenides
Energy Technology Data Exchange (ETDEWEB)
The effects of dilute impurity doping on charge-density wave (CDW) structures and gaps in NbSe{sub 3} 1T-TaS{sub 2} and 2H-NbSe{sub 2} have been studied by using a scanning tunneling microscope (STM) operating at 4.2 K. In Fe doped samples of NbSe{sub 3} the STM spectroscopy measurements indicate that the added impurities can significantly shift the CDW energy gaps. In NbSe{sub 3}, Fe reduces both CDW gaps by 25-30%, and produces changes in the conductance structure relative to the pure material. The images of Fe{sub 0.01}NbSe{sub 3} show that all three surface chains in the unit cell still carry a strong CDW modulation with no evident disorder. However, a change in the relative amplitudes of the high and low temperature CDWs is detected. The effects of Co and Ni impurities on the gaps in NbSe{sub 3} have also been studied. While Co increases both by 25-30%, Ni increases only the high temperature gap with the low temperature gap remaining ...
1992-12-01
Residual #alpha#-Si_3N_4 in O' crystals in CeO_2-doped O' + #beta#' SiAlON ceramics
International Nuclear Information System (INIS)
The microstructure of a pressureless sintered (1,605 C, 90 min) O' + #beta#' SiAlON ceramic with CeO_2 doping has been investigated. It is duplex in nature, consisting of very large, slablike elongated O' grains (20--30 #mu#m long), and a continuous matrix of small rodlike #beta#' grains (< 1.0 #mu#m in length). Many #alpha#-Si_3N_4 inclusions (0.1--0.5 #mu#m in size) were found in the large O' grains. CeO_2-doping and its high doping level as well as the high Al_2O_3 concentration were thought to be the main reasons for accelerating the reaction between the #alpha#-Si_3N_4 and the Si-Al-O-N liquid to precipitate O'-SiAlON. This caused the supergrowth of O' grains. The rapid growth of O' crystals isolated the remnant #alpha#-Si_3N_4 from the reacting liquid, resulting in a delay in the #alpha# #-># #beta#-Si_3N_4 transformation. The large O' grains and the #alpha#-Si_3N_4 inclusions have a pronounced effect on the ...
Radiation hardening of optical fiber links by photobleaching with light of shorter wavelength
International Nuclear Information System (INIS)
The influence of additionally injected short-wavelength photobleaching light on the radiation hardness of Ge-doped graded index fibers working at 1,300 nm wavelength is investigated. Predictions are complicated by the fact that more efficient shortwave bleaching light experiences higher radiation-induced loss. Promising results are found for low fiber temperatures (approx-lt -50 C) and bleaching light of about 835 nm wavelength.
1995-09-18
Energy Technology Data Exchange (ETDEWEB)
The nano-structured Fe(III)-doped TiO{sub 2} photocatalysts with anatase phase have been developed for the oxidation of non-biodegradable different organic dyes like methyl orange (MO), rhodamine B (RB), thymol blue (TB) and bromocresol green (BG) using UV-Hg-lamp. The different compositions of Fe{sub x}Ti{sub 1-x}O{sub 2} (x = 0.005, 0.01, 0.05, and 0.1) nanocatalysts synthesized by chemical method (CM), have been characterized by X-ray diffraction (XRD), UV-vis diffuse reflectance spectra, specific surface area (BET), transmission electronic microscopy (TEM) analysis, XPS, ESR and zeta potential. From XRD analysis, the results indicate that all the compositions of Fe(III) doped in TiO{sub 2} catalysts gives only anatase phase not rutile phase. For complete degradation of all the solutions of the dyes (MO, RB, TB, and BG), the composition with x = 0.005 is more photoactive compared all other compositions of Fe{sub x}Ti{sub 1-x}O{sub 2}, and ...
2008-09-15
International Nuclear Information System (INIS)
The physical methods were used to study the decomposition of a metastable #beta#-solid solution in the VT22 two-phase titanium alloy. It is shown that the martensitic #beta# #-># #alpha#'' transformation in doped-element depleted microvolumes of the #beta#-solid solution are dominanted and the long-time multistage decomposition through a number of intermediate states in others.
Nonformity of the electron density in amorphous silicon films
Energy Technology Data Exchange (ETDEWEB)
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
1985-12-01
New crystals for dual-readout calorimetry
Lead tungstate crystals doped with small fractions of praesodynium or molybdenum have been tested in beams of high-energy electrons. The goal of these tests was to study the effects of such dopants on the capability to separate the signal components deriving from the Cherenkov and scintillation light generated by the beam particles. These studies were carried out in view of the possible application of such crystals in dual-readout calorimeters.
2009-01-01
Nanocrystalline doped cerium oxide as a catalyst for SO{sub 2} reduction by CO
Energy Technology Data Exchange (ETDEWEB)
Nanocrystalline processing by inert gas condensation has the inherent advantages of generating: (1) high surface area nanoclusters, (2) non-stoichiometric oxides, and (3) high dispersions of dopants. This approach is exploited in the synthesis of fluorite-structured catalysts for SO{sub 2} reduction by CO. Nanocrystalline CeO{sub 2{minus}x}, La-doped CeO{sub 2{minus}x}, and Cu-doped CeO{sub 2{minus}x} were produced by magnetron sputtering from a pure or mixed metal target, followed by controlled oxidation of the metallic clusters. The as-prepared doped and undoped nanocrystalline CeO{sub 2{minus}x} materials were found to be excellent catalysts for complete SO{sub 2} conversion to elemental sulfur. Undoped nanocrystalline CeO{sub 2{minus}x} enabled light-off at 460 C, a temperature {approximately} 120 C lower than that over polycrystalline CeO{sub 2}, which is a novel effective catalyst itself. The high catalytic activity ...
1994-12-31
Intrinsic and extrinsic crossluminescence in ionic crystals
Energy Technology Data Exchange (ETDEWEB)
Intrinsic crossluminescence (CRL) of CsBr, CsCl, and of BaF{sub 2} was investigated with electron-beam and synchrotron radiation excitation. From the CRL spectra, the excitation spectra and the reflectivity, energy level schemes were deduced. Extrinsic CRL was observed changing either the initial (CsCl:Br{sup -}) or the final (RbCl:Cs{sup +}; KCl:Cs{sup +}) state of CRL by doping. (author).
1991-01-01
Intrinsic and extrinsic crossluminescence in ionic crystals
International Nuclear Information System (INIS)
Intrinsic crossluminescence (CRL) of CsBr, CsCl, and of BaF_2 was investigated with electron-beam and synchrotron radiation excitation. From the CRL spectra, the excitation spectra and the reflectivity, energy level schemes were deduced. Extrinsic CRL was observed changing either the initial (CsCl:Br"-) or the final (RbCl:Cs"+; KCl:Cs"+) state of CRL by doping. (author).
1990-09-03
Hydrogen effect or texture and deformation mechanism in #beta#-titanium alloy cold rolling
International Nuclear Information System (INIS)
The relationships of hydrogen alloyed #beta#-titanium alloy deformation behaviour to its microstructure and texture are investigated. It is shown that plasticity increases and strain induced texture changes at low hydrogen contents (0.1-0.2 mass %). Possible mechanisms responsible for specific features of #beta#-Ti alloy deformation are discussed. The study is made using alloy VT35 doped with hydrogen
1999-09-01
Energy Technology Data Exchange (ETDEWEB)
The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, ...
2009-04-15
Facile synthesis and the sensitized luminescence of europium ions-doped titanate nanowires
International Nuclear Information System (INIS)
Europium (Eu) ions-doped titanate nanowires were synthesized via a sol-gel-hydrothermal chemistry and they were found to be roll multilayered trititanate-type nanowires intercalated with Eu3+ and alkali ions. The average diameter was about 20 nm for nanowires synthesized in NaOH solution and about 10 nm for nanowires synthesized in KOH solution. Under ultraviolet excitation the nanowires showed bright red emission corresponding to 5D0-7Fj of Eu3+ ions at room temperature, which was attributed to the non-radiative energy transfer from the surrounding Ti-O octahedral nanosheets to the central Eu3+ ions in interlayer. The luminescent properties of nanowires were influenced by the type of co-intercalated alkali ions, doping degree, hydrothermal and annealing temperatures. The intensity ratio of 5D0-7F2 to 5D0-7F1 of titanate nanowires intercalated with Eu3+ and Na+ ions was higher than that of titanate nanowires intercalated with Eu3+ and K+ ions. ...
2009-04-15
Analysis of TL glow curves in differently doped LiF:Mg,Ti
International Nuclear Information System (INIS)
A computerised curve-fitting method was developed to calculate the trapping parameters in LiF TLD-100 and LiF:Mg, Ti. After irradiation in a "6"0Co field and with X rays emitted at different voltages the TL process is best described by first-order kinetics. A dependence of the trapping parameters on both the concentration of Mg and Ti and photon energy was detected. (author).
International Nuclear Information System (INIS)
The objective of this research is to determine the role of DNA repair in mutagenesis and carcinogenesis in mammalian cells. Use of the host-cell reactivation viral suicide enrichment procedure was initiated in the isolation of repair-deficient mutants. Lightly mutagenized BHK cells were infected with irradiated Herpes simplex virus (HSV); several radiation-sensitive strains were isolated among the survivors of the infection. The characterization of these strains is progressing and the enrichments are continuing. That alterations in the frequency of mutation of C3H/10T 1/2 cells, occurring as a result of holding the cells in a confluent state following treatment with ethylmethane sulfonate, parallel the alterations in the frequency of neoplastic transformation was found. The repair capabilities of BHK cells were found to be intermediate in comparison to repair-proficient and -deficient human cells with regard to the reactivation of HSV treated with various ...
One-step purification of Taq DNA polymerase using nucleotide-mimetic affinity chromatography.
The thermostable Thermus aquaticus DNA polymerase (Taq Pol) has been the key factor in transforming the initial PCR method into one with huge impact in molecular biology and biotechnology. Therefore, the development of effective affinity adsorbents for the purification of Taq Pol, as well as other DNA polymerases, attracts the attention of the enzyme manufacturers and the research laboratories. In this report we describe a simple protocol for the purification of Taq Pol from E. coli lysates, leading to enzymes of high specific activity and purity. The protocol is based on a single affinity chromatography step, featuring an immobilized ligand selected from a structure-biased combinatorial library of dNTP-mimetic synthetic ligands. The ligand library was screened for its ability to bind and purify Taq Pol from E. coli lysates. One immobilized ligand (mABSGu) of the general formula X-Trz-Y, bearing 9-aminoethylguanine (AEGu) and aniline-2-sulfonic acid (mABS) linked ...
2007-01-01
Energy Technology Data Exchange (ETDEWEB)
Radiation inactivation and sedimentation equilibrium analysis were used to determine the functional and physical size of the chicken hepatic membrane receptor that binds N-acetylglucosamine-terminated glycoproteins. Purified plasma membranes from chicken liver were irradiated with high energy electrons and assayed for 125I-agalactoorosomucoid binding. Increasing the dose of ionizing radiation resulted in a monoexponential decay in binding activity due to a progressive loss of binding sites. The molecular mass of the chicken lectin, determined in situ by target analysis, was 69,000 +/- 9,000 Da. When the same irradiated membranes were solubilized in Brij 58 and assayed, the binding protein exhibited a target size of 62,000 +/- 4,000 Da; in Triton X-100, the functional size of the receptor was 85,000 +/- 10,000 Da. Sedimentation equilibrium measurements of the purified binding protein yielded a lower limit molecular weight of 79,000 +/- 7,000. However, the solubilized lectin was detected ...
1990-03-05
Energy Technology Data Exchange (ETDEWEB)
Mercury is an element which, with its compounds, is hazardous and is found in hazardous wastes. In Order to develop suitable diagnostic and therapeutic agents for mercury exposure, we have sought alternative test systems. We have used the chelating agent 2,3-dimercaptopropane-1-sulfonate (DMPS, DIMAVAL{reg_sign}) for estimating the body burden of mercury in normal humans and in dental personnel in a developing country, and for detoxifying humans with mercurous chloride exposure. Use of the DMPS-mercury challenge test has shown that two-thirds of the mercury excreted in the urine of volunteers with dental amalgams appears to be derived from the mercury vapor released from their amalgams. The DMPS challenge test (300 mg, by mouth, after an 11 hr fast) was useful for monitoring dental personnel for mercury vapor exposure. The DMPS challenge test was given to 11 factory workers who make a skin lotion that contains mercurous chloride, 8 users of the skin lotion, and 9 ...
1996-12-31
Copper removal by algal biomass: Biosorbents characterization and equilibrium modelling
Energy Technology Data Exchange (ETDEWEB)
The general principles of Cu(II) binding to algal waste from agar extraction, composite material and algae Gelidium, and different modelling approaches, are discussed. FTIR analyses provided a detailed description of the possible binding groups present in the biosorbents, as carboxylic groups (D-glucuronic and pyruvic acids), hydroxyl groups (cellulose, agar and floridean starch) and sulfonate groups (sulphated galactans). Potentiometric acid-base titrations showed a heterogeneous distribution of two major binding groups, carboxyl and hydroxyl, following the quasi-Gaussian affinity constant distribution suggested by Sips, which permitted to estimate the maximum amount of acid functional groups (0.36, 0.25 and 0.1 mmol g{sup -1}) and proton binding parameters (pK{sup '}{sub H}=5.0,5.3and4.4;m{sub H} = 0.43, 0.37, 0.33), respectively for algae Gelidium, algal waste and composite material. A non-ideal, semi-empirical, thermodynamically consistent (NICCA) ...
2009-04-30
Energy Technology Data Exchange (ETDEWEB)
It has been discovered that the presence of MoO/sub 3/ lowers the ..cap alpha..-..beta.. transition in Sb/sub 2/O/sub 4/ from 935 to 850/sup 0/C with concurrent dissolution of Mo in the high-temperature (..beta..) form. The structure of Mo-doped ..beta..-Sb/sub 2/O/sub 4/ has been investigated by powder neutron diffraction, extended X-ray absorption fine structure (EXAFS) and Raman spectroscopies, and scanning-electron microscopy (SEM). Cell parameters: a = 12.0571 (12) A, b = 4.8335 (1) A, c = 5.3838 (6) A, ..beta.. = 105.579 (5)/sup 0/, monoclinic, space group C2/c, Z = 4. Combining the results of these techniques leads to the hypothesis that Mo is located interstitially within channels of electron density in the Sb/sub 2/O/sub 4/ structure with concurrent vacancy of two Sb/sup III/ atoms. There is no apparent oxygen deficiency in the resulting structure. 25 references, 6 figures, 3 tables.
1985-10-09
Radiation damage studies on CrO_4"2"- doped alums
International Nuclear Information System (INIS)
Radiation damage studies have been carried out on undoped and CrO_4"2"- doped potassium and ammonium alums. The optical absorption bands observed around 27100 and 36500 cm"-"1 before irradiation have been attributed to the transitions t_1 #-># e and t_1 #-># t_2, on the basis of Ball-hausen and Liehr scheme. On prolonged X-irradiation, these bands disappear in both the alums and three new bands seem to grow in ammonium alum while only two new bands could be seen in potassium alum. EPR studies at RT reveal that there are two lines at g = 2.004 and g = 2.010 in ammonium alum and only one line at g = 2.004 in potassium alum. Besides these two nearly isotropic lines, there is a set of lines around g = 1.95 in both the alums. Correlating the optical and EPR studies it is concluded that SO_3"- and O_3"- centres have formed on X-irradiation in ammonium alum while only SO_3"- seems to have formed in potassium alum. The most important feature is the formation of a new ...
Preparation of a high-J sub c YBCO bulk superconductor by the platinum doped melt growth method
Energy Technology Data Exchange (ETDEWEB)
Recently we have found a highly effective additive for the melt growth processings attaining high critical currents in YBCO superconductor. It is platinum and it behaves as an effective grain growth inhibitor for the Y{sub 2}BaCuO{sub 5} phase. Even with less than 1 wt.% doping, Y{sub 2}BaCuO{sub 5} particles becomes less than one micron in size and distribute themselves to become homogeneously embedded in the large grown YBa{sub 2}Cu{sub 3}O{sub y} grains. The sample shows large magnetic hysteresis and a typical J{sub c} value estimated by using Bean's model critical state model is 18000 A/cm{sup 2} at 77 K and 1 T. We found that rhodium has a similar remarkable effect. (orig.).
1991-06-15
Energy Technology Data Exchange (ETDEWEB)
Dopant-free Bi{sub 2}Ti{sub 2}O{sub 7} thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV-Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La{sup 3+} ions can act as a stabilizer of Aurivillus phase BLT and a grain-growth inhibitor in BLT thin films.
2008-11-28
Polysilicon thin film transistors fabricated on low temperature plastic substrates
Energy Technology Data Exchange (ETDEWEB)
We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}
1999-07-01
Photoluminescence of europium doped LiInO2 powder
British Library Electronic Table of Contents (United Kingdom)
Abstract Lithium-indium oxide is one of the candidate materials as solid-state scintillators for solar neutrinos due to an inverse --decay of 115In to 115Sn. On the other hand, when doped with rare-earth ions such as Eu3+ or Sm3+, it becomes a promising phosphor material. In this report we present a simple solid-state procedure for preparation of LiInO2:Eu3+ powders. X-ray diffraction confirmed prod-uct in tetragonal structural form (space group: I41/amd) and no impurity phases were detected. Then, high resolution photoluminescence emission measurements were performed at room and low temperatures to find 5D0 - 7FJ. Emission kinetics from 5D0 level exhibited pure single exponential behavior with lifetime of about 1.5 ms. Maximum energy splitting of 7F1 manifold is recorded as a function of ...
2011-01-01
Modeling of the relaxation kinetics of metastable tensile strained Si:C alloys
Energy Technology Data Exchange (ETDEWEB)
In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We simulate the time evolution of layer ...
2010-07-01
Lanthanum gallate and ceria composite as electrolyte for solid oxide fuel cells
International Nuclear Information System (INIS)
The composite of doped lanthanum gallate (La_0_._9Sr_0_._1Ga_0_._8Mg_0_._2O_2_._8_5, LSGM) and doped ceria (Ce_0_._8Sm_0_._2O_1_._9, CSO) was investigated as an electrolyte for solid oxide fuel cell (SOFC). The LSGM-CSO composite was examined by X-ray diffraction (XRD) and impedance spectroscopy. It was found that the sintered LSGM-CSO composite contains mainly fluorite CeO_2 phase and a minority impurity phase, Sm_3Ga_5O_1_2. The LSGM-CSO composite electrolyte shows a small grain boundary response in the impedance spectroscopy as compared to LSGM and CSO pellets. The composite electrolyte exhibits the highest conductivity in the temperature range of 250-600 "oC, compared to LSGM and CSO. The LSGM-CSO composite can be expected to be an attractive intermediate temperature electrolyte material for solid oxide fuel cells.
2010-03-04
Inverse spinel materials. A new class of high voltage cathode materials for Li-ion batteries
Energy Technology Data Exchange (ETDEWEB)
The influence of Cr on the structure and electrochemical properties of LiCoVO{sub 4} was studied using X-Ray diffraction, scanning electron microscopy, Raman Spectroscopy and cycle tests. Doping levels up to 10 mol% were achieved, which improved the electrochemical stability of the structure of LiCoVO{sub 4}, resulting in a significant increase in the initial charge and discharge capacity. The Raman spectroscopy data for the Cr-doped LiCoVO{sub 4} is similar as for LiCoVO{sub 4}. The replacement of a dopant for the Co-ion in the inverse spinel structure causes several Raman shifts. The X-ray diffraction patterns show no new phases and combined with the Raman spectroscopy data it is concluded that the Cr dopant will be located at the octahedral site (16d) where they create an electronic pathway that enhances the electronic conductivity. However, the capacity dropped significantly after prolonged cycling, which is due to the diffusion of V{sup ...
2003-07-01
Energy Technology Data Exchange (ETDEWEB)
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO{sub 2} layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate ...
2006-08-15
International Nuclear Information System (INIS)
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide ...
2006-08-01
Energy Technology Data Exchange (ETDEWEB)
Semiconductive crystalline PZT powders doped with Bi and K were synthesized by hydrothermal reaction at 200{degree}C for 48 hours. The synthesis of the crystalline powders became difficult with an increase in doped amount of Bi and K, and in Zr/(Ti+Zr) ratio. Since substantial amounts of Pb remained in solution after hydrothermal reaction, the addition of Pb in excess of 25% was necessary to obtain the stoichiometric composition of the PZT solid solution. Bi contents in the powders were identical to those in starting materials, while K contents were less than expected ones. The electromechanical properties of the sintered bodies could be precisely measured by an admittance-curve-fitting method. The electromechanical coupling factor and piezoelectric coefficient of the sintered bodies varied with the Bi content like those of specimens prepared by solid state reaction, and showed the maximum values at a given Bi content. However, the change in ...
1989-10-01
Energy Technology Data Exchange (ETDEWEB)
High-performance polysilicon thin-film transistors (TFT`s) are fabricated using an excimer laser to recrystallize the undoped channel and dope the source-drain regions. Using a technique the authors call grain engineering they are able to control grain microstructure using laser parameters. Resulting polysilicon films are obtained with average grain sizes of {approximately}4--9 {micro}m in sub-100 nm thick polysilicon films without substrate heating during the laser recrystallization process. Using a simple four-mask self-aligned aluminum top-gate structure, they fabricate TFT`s in these films. By combining the grain-engineered channel polysilicon regions with laser-doped source-drain regions, TFT`s are fabricated with electron mobilities up to 260 cm{sup 2}/Vs and on/off current ratios greater than 10{sup 7} To their knowledge, these devices represent the highest performance laser-processed TFT`s reported to date fabricated without substrate ...
1998-04-01
High field ESR of P-doped Si for Quantum Computing Application
Energy Technology Data Exchange (ETDEWEB)
We measured ESR of phosphorous-doped silicon with a low concentration of P, n, at high magnetic fields and low temperatures to investigate the states of nuclear spin. A sample with n = 6.52 x 10{sup 16} /cm{sup 3} was studied at 2.85 T (80 GHz) from 30 K to 2.3 K by field-modulating cw-ESR for a fixed 0 dB power. As the temperature was lowered, the out-of-phase signal appeared around 18 K, reached at a maximum intensity at 13 K, and disappeared around 6 K. The out-of-phase signal is referred to the field modulation. The in-phase signal started to change from the derivative of absorption spectrum at high temperatures to absorption-like shape around 15 K and asymmetry of intensity for two peaks of hyperfine-separated signals increased as temperatures was lowered. Below 10 K, the saturation of the in-phase signal started to appear. We speculate that the asymmetry is caused by saturation effect and dynamic nuclear polarization of {sup 31}P nuclear spin due to drastic ...
2009-02-01
GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy
Energy Technology Data Exchange (ETDEWEB)
High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended optical response was not detected, most ...
2004-12-21
Electron spin resonance investigation of Mn^{2+} ions and their dynamics in manganese doped SrTiO_3
Using electron spin resonance, lattice position and dynamic properties of Mn2+ ions were studied in 0.5 and 2 % manganese doped SrTiO3 ceramics prepared by conventional mixed oxide method. The measurements showed that Mn2+ ions substitute preferably up to 97 % for Sr if the ceramics is prepared with a deficit of Sr ions. Motional narrowing of the Mn2+ ESR spectrum was observed when temperature increases from 120 K to 240-250 K that was explained as a manifestation of off-center position of this ion at the Sr site. From the analysis of the ESR spectra the activation energy Ea = 86 mV and frequency factor 1/?0 ? (2-10)x10^(-14) 1/s for jumping of the impurity between symmetrical off-center positions were determined. Both values are in agreement with those derived previously from dielectric relaxation. This proves the origin of dielectric anomalies in SrTiO3:Mn as those produced by the reorientation dynamics of Mn2+ dipoles.
2007-01-01
British Library Electronic Table of Contents (United Kingdom)
A novel method for the determination of metoclopramide (MCP) using electrogenerated chemiluminescence (ECL) is presented. A tris(2,2prime-bipyridyl)dichlororuthenium(II) (Ru(bpy)32+)-doped silica (RuDS) nanoparticle/perfluoinated ion-exchange resin (Nafion) with nanocomposite membrane modified glassy carbon electrode (GCE) is used. The Ru(bpy)32+ encapsulation interior of the silica nanoparticle maintains its electrochemical activities and also reduces Ru(bpy)32+ leaching from the silica matrix when immersed in water due to the electrostatic interaction. The analytical performance of this ECL sensor for MCP is shown in detail. Under optimal experimental conditions, it has good linearity in the concentration range from 2x10-8mol/L to 1x10-5mol/L (R=0.9989) with a detection limit of 7x10-9mo...
2008-01-01
Doping of silicon carbide by ion implantation
Energy Technology Data Exchange (ETDEWEB)
A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is ...
2001-07-01
British Library Electronic Table of Contents (United Kingdom)
In this paper, we prepared by the sol-gel method alkaline titania catalysts, doped by gelling titanium alkoxide with aqueous solutions containing potassium, rubidium or cesium chlorides. XRD patterns showed that samples annealed at 400 and 600degreeC contained a single crystalline phase, anastase. Specific surface areas were higher in samples annealed at 400degreeC (>100m2/g) than in those annealed at 600degreeC (25m2/g). The weight density of basic sites determined by CO2-TPD drastically diminished in samples treated at 600degreeC. Catalysts were tested for the self-condensation of acetone at 300degreeC; main reaction products were isomesityl oxide, mesityl oxide and mesitylene. Samples annealed at 600degreeC showed lower acetone conversion rate and low formation of mesitylene than that o...
2006-01-01
Visible semiconductor lasers with the AlGaInP materials system
International Nuclear Information System (INIS)
The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.
1988-11-02
Energy Technology Data Exchange (ETDEWEB)
The rare earth antimonates RE{sub 3}Sb{sub 5}O{sub 12} constitute an isostructural series, where the rare earth site symmetry is S{sub 4}. The spectroscopic properties of pure or doped compounds of this family are studied in order to derive their energy level schemes and to simulate them through the crystal field theory, by using the approximated D{sub 2d} potential. The paramagnetic susceptibilities are calculated with the derived wavefunctions and compared to experiment.
1991-01-01
The hunt for ?13 at the Daya Bay nuclear power plant
International Nuclear Information System (INIS)
The Daya Bay reactor neutrino experiment is located at the Daya Bay nuclear power plant in Shenzhen, China. The experiment deploys eight 'identical' antineutrino detectors to measure antineutrino fluxes from six 2.9 GWth reactor cores in three underground experimental halls at different distances. The target zone of the Daya Bay detector is filled with 20 t 0.1% Gd doped LAB liquid scintillator. The baseline uncorrelated detector uncertainty is ?0.38% using current experimental techniques. Daya Bay can reach a sensitivity of sin22?13<0.01 with baseline uncertainties after 3 years of data taking.
2010-03-30
The effect of temperature on the radiative performance of Ho-YAG thin film selective emitters
Energy Technology Data Exchange (ETDEWEB)
The authors present the emitter efficiency results for the thin film 25 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) selective emitter from 1000 to 1700 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns) and used to calculate the radiative efficiency. The radiative efficiency and power density of rare earth doped selective emitters are strongly dependent on temperature and experimental results indicate an optimum temperature (1650 K for Ho YAG) for thermophotovoltaic (TPV) applications.
1995-01-01
Synthesis and scintillation properties of GdCl_3:Ce"3"+ (Gd_1_-_xCe_xCl_3_,x = 0.005-0.08)
International Nuclear Information System (INIS)
Single crystals of GdCl_3 doped with different concentrations of Ce"3"+ have been grown using the Bridgman-Stockbarger technique and their luminescence and scintillation properties were investigated. The luminescence spectrum of GdCl_3:Ce"3"+ is complex and consists of two bands with maxima at 350 nm and 370 nm. The maximal light yield in GdCl_3:Ce"3"+ was observed at #approx#1 mol% of Ce"3"+ (more than 38 000 ph/MeV).
2009-07-08
Simple integral screenprinting process for selective emitter polycrystalline silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.
1991-09-23
Session 6: Redox Behavior of Cerium-Zirconium-Bismuth Mixed Oxides
Energy Technology Data Exchange (ETDEWEB)
The CeO{sub 2}-ZrO{sub 2}-Bi{sub 2}O{sub 3} samples with different bismuth content were prepared in this study. By the doping of Bi{sub 2}O{sub 3} into the lattice, TPR profiles of the CeO{sub 2}-ZrO{sub 2} shifted to lower temperatures and oxygen storage capacity increased remarkably. It is concluded that the reason for such a behavior is probably due to both the formation of oxygen vacancies which enhance the oxygen mobility and the simultaneous reduction of Ce{sup 4+} and Bi{sup 3+} in the mixed oxides. (authors)
2004-07-01
Relations between structural and superconducting properties of bulk and thin film high-T_c materials
International Nuclear Information System (INIS)
The structural ordering of oxygen deficient and Co-doped YBCO (YBa_2Cu_3_-_yCo_yO_6_+_x) have been studied experimentally, and by computer simulations of the oxygen ordering in the basal plane of the structure. The calculations are based on the two-dimensional ASYNNNI model and its modifications. Good agreement is established between the ASYNNNI calculations and the experimentally observed structural properties of the double cell ortho-II structure and the oxygen disordering process from Co-doping into the basal plane. A model that relates the superconducting transition temperature T_c(x) of undoped YBCO and T_c(y) of Co-doped YBCO to the formation of specific domains of the two orthorhombic ordered oxygen phases, ortho-I and ortho-II, shows a close agreement with experimental T_c(x) and T_c(y) data of samples prepared under equilibrium conditions. The structural changes as a result of metal ion substitutions and ...
1984-02-13
Polysilicon TFT fabrication on plastic substrates
Energy Technology Data Exchange (ETDEWEB)
Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).
1997-08-06
Energy Technology Data Exchange (ETDEWEB)
The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)
1998-01-01
Phytic acid doped nanoparticles for green anticorrosion coatings
British Library Electronic Table of Contents (United Kingdom)
In this paper, an environmentally friendly metal corrosion inhibitor, phytic acid, was assembled into the walls of silica nanoparticles via layer-by-layer self-assembly technique (LbL) with poly(allylamine hydrochloride). Such functionalized nanoparticles were uniformly distributed into sol-gel films for metal anticorrosion. The films showed very pronounced and lasting protective efficiency in concentrated salt aqueous solutions as indicated by electrochemical impedance spectroscopy (EIS) measurement. These results may provide a new route for the preparation of environment-friendly anticorrosion coatings.
2010-01-01
Photoluminescence of manganese- and copper-doped CdS nanowires
Energy Technology Data Exchange (ETDEWEB)
Arrays of CdS:Mn{sup 2+}:Cu{sup +} micro- and nanowires grown in polycarbonate ion-track templates exhibit photoluminescence in the spectral domain ranging from 500 to 800 nm at room temperature. A comparison with similar CdS and CdS:Mn{sup 2+} wire arrays is presented. The individual contributions to the emission spectra of Cu{sup +} and Mn{sup 2+} ions in the CdS matrix are explained using their energy level schemes. Also SEM, EDX and EPR data are given for these wires. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
2005-02-01
Photoluminescence of manganese- and copper-doped CdS nanowires
International Nuclear Information System (INIS)
Arrays of CdS:Mn"2"+:Cu"+ micro- and nanowires grown in polycarbonate ion-track templates exhibit photoluminescence in the spectral domain ranging from 500 to 800 nm at room temperature. A comparison with similar CdS and CdS:Mn"2"+ wire arrays is presented. The individual contributions to the emission spectra of Cu"+ and Mn"2"+ ions in the CdS matrix are explained using their energy level schemes. Also SEM, EDX and EPR data are given for these wires. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
2005-02-01
British Library Electronic Table of Contents (United Kingdom)
Doped ultrafine silicon dioxide powder with a narrow particle size distribution was obtained by RF discharge-stimulated dichlorosilane (SiH2C) oxidation at a low pressure using isobutylene as the combustion inhibitor and chromium hexacarbonyl (Cr(CO)6) as the dopant. The formation and morphology of the ultrafine particles are governed by the parameters of the RF discharge and by the chemical mechanism of the combustion reaction yielding the aerosol. Submicron-sized filamentous carbon structures can be obtained by isobutylene decomposition under spark discharge conditions in the presence of a molybdenum metal catalyst.
2009-01-01
Nuclear borehole logging using lithium detector assemblies
International Nuclear Information System (INIS)
A method and apparatus for nuclear borehole logging, and in particular, neutron porosity logging, uses a neutron source, and a pair of spaced lithium detectors, preferably Li"6I crystal or Li"6 doped glass, to detect neutrons emitted from a borehole formation being logged. The spectrum developed by the lithium detectors is processed to remove the gamma ray background radiation and the hydrogen absorption peak, thus allowing a more accurate neutron count. A Gaussian curve is fitted to the neutron peak of the spectrum, the curve eliminating the hydrogen absorption peak. The area under this Gaussian curve represents the neutron count. (author).
1991-11-01
Mechanisms of Alloy 800 corrosion in helium
International Nuclear Information System (INIS)
Cr_2O_3 scales are found to form on Alloy 800 and a similar pure ternary alloy in air, and 1 and 50 atm. helium containing oxidizing impurities typical of those in an SGHTR. The strong temperature dependence and neglibible helium overpressure dependence indicate that gas transport through the scales is not rate controlling. Surface oxidation rates are therefore controlled by solid state diffusion and the low oxygen partial pressure dependence of the oxidation rate in Alloy 800 is ascribed to the presence of extrinsic defects in the Cr_3O_3 (due to doping by alloying elements) or to the presence of short circuit diffusion paths. (Auth.).
Magnetic structure of Ce(Ru_0_._9_6Pd_0_._0_4)_2Si_2
International Nuclear Information System (INIS)
The magnetic structure of a tetragonal Ce(Ru_0_._9_6Pd_0_._0_4)_2Si_2 single crystal, determined by neutron diffraction measurements, is similar to that observed in Rh doped alloys. The magnetic moments are oriented and modulated along the c-axis. Here the wave vector is incommensurate: k=(0,0,0.38). At 1.5 K, the moment is estimated to about 0.3 #mu#_B. Magnetization, magnetoresistance and Hall effect measurements performed on this alloy are also reported. (orig.).
Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing
International Nuclear Information System (INIS)
In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.
2005-11-14
Infrared spectroscopy analysis of MgO-doped silicon nitride
Energy Technology Data Exchange (ETDEWEB)
Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.
1997-12-31
International Nuclear Information System (INIS)
The authors describe measurements of emittance made on samples of solar cell coverglasses incorporating new coatings both on C-7940 fused silica and on CMX ceria doped microsheet. Samples of a conventional, MgF_2 coating on the same two types of coverglass substrates were included in the measurements as controls. Measurements were made by the calorimetric method of total hemispherical emittance within a cooled chamber as well as by the more common infrared reflectance method. Emittance enhancements from 1 to 4% were measured for the new coatings.
1988-09-26
Lanthanide-ion doped oxide nanoparticles were functionalized for use as fluorescent biological labels. These nanoparticles are synthesized directly in water which facilitates their functionalization, and are very photostable without emission intermittency. Nanoparticles functionalized with guanidinium groups act as artificial toxins and specifically target sodium channels. They are individually detectable in cardiac myocytes, revealing a heterogeneous distribution of sodium channels. Functionalized oxide nanoparticles appear as a novel tool particularly well adapted to long-term single-molecule tracking.
2005-04-01
Emittance theory for thin film selective emitter
Energy Technology Data Exchange (ETDEWEB)
Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).
1994-08-01
Effect of temperature gradient on thick film selective emitter emittance
Energy Technology Data Exchange (ETDEWEB)
A temperature gradient across a thick ({ge}.1mm) film selective emitter will produce a significant reduction in the spectral emittance from the no temperature gradient case. Thick film selective emitters of rare earth doped host materials such as yttrium-aluminum-garnet (YAG) are examples where temperature gradient effects are important. In this paper a model is developed for the spectral emittance assuming a linear temperature gradient across the film. Results of the model indicate that temperature gradients will result in reductions the order of 20{percent} or more in the spectral emittance. {copyright} {ital 1997 American Institute of Physics.}
1997-03-01
Effect of porosity on the superplasticity of an alumina
Energy Technology Data Exchange (ETDEWEB)
To evaluate the effect of porosity on superplasticity behavior, it is essential to use materials of similar initial grain sizes. This can be achieved by HIPing, which provides an effective way of reducing initial porosity while avoiding appreciable grain growth; various levels of porosity can be achieved for similar grain sizes. This note is concerned with the influence of porosity on superplasticity tensile deformation of a fine grained high-purity alumina doped with copper oxide and containing a grain growth inhibitor. Specimens were prepared by slip casting to net-shape and sintering; some presintered specimens were HIPed to reduce porosity. The subsequent superplasticity behavior is related to porosity in the material.
1994-02-01
Direct dark matter identification with a hybrid detection technique
In the quest to understand the ultimate nature of WIMPs, we propose the use of a hybrid detection technique: cylinders filled with liquefied noble gasses, acting as targets, are immersed inside a tank of Gd-doped ultra-pure water that provides an active and efficient veto against neutrons. The evaluation of the background rejection capabilities and physics potential of this instrument have been carried out through a full GEANT4 simulation, assuming the detector will be located at the Canfranc underground laboratory (in the Spanish Pyrenees). Our results compare very favourably with existing or planned experiments in the field. This technique is scalable and will allow to reach target masses of few tonnes in the next future.
2008-01-01
Combining laser chemical processing and aerosol jet printing: a laboratory scale feasibility study
British Library Electronic Table of Contents (United Kingdom)
Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.
2011-01-01
International Nuclear Information System (INIS)
We review recent progress on experimental studies of collective charge excitations in hole-doped spin ladder system Sr_1_4_-_xCa_xCu_2_4O_4_1, focusing on anomalous features of phase excitation. We also discuss possible candidates for related charge ordered state, together with a controversial issue of the hole density transferred from spin chain layers to spin ladder layers. (author)
2007-04-01
The interaction between N-donor adsorbates such as ammonia and pyridine with Cu(II)-exchanged montmorillonite, beidellite, flourohectorite into smectite clays has been studied by electron spin resonance. Cu(II) cations exchanged into smectites coordinate five ammonia or pyridine molecules in beidellite, four ammonia of pyridine molecules in hydroxyhectorite. Thus, the Cu(II) cations bound to the interior surfaces of these smectite clays constitute strong Lewis acid sites. 26 refs., 7 figs., 1 tab.
1993-01-14
A new type active personal dosemeter with a solid state detector
International Nuclear Information System (INIS)
We have developed a new type personal dosemeter by using a B-10 doped silicon p-n junction detector with a polyethylene radiator and a polyethylene moderator. The purpose of this study was to develop a real time neutron dosemeter with a nearly flat response in the energy range from thermal to 15 MeV and low angular dependence to the incident neutron direction. The neutron response of the dosemeter was obtained with the Monte Carlo calculation and the monoenergetic neutron experiment in a free air field and also under a condition attached on a phantom.
1988-04-01
International Nuclear Information System (INIS)
Y2Te4O11:Eu3+ and Y2Te5O13:Eu3+ single crystals in sub-millimeter scale were synthesized from the binary oxides (Y2O3, Eu2O3 and TeO2) using CsCl as fluxing agent. Crystallographic structures of the undoped yttrium oxotellurates(IV) Y2Te4O11 and Y2Te5O13 have been determined and refined from single-crystal X-ray diffraction data. In Y2Te4O11, a layered structure is present where the reticulated sheets consisting of edge-sharing [YO8]13- polyhedra are interconnected by the oxotellurate(IV) units, whereas in Y2Te5O13 only double chains of condensed yttrium-oxygen polyhedra with coordination numbers of 7 and 8 are left, now linked in two crystallographic directions by the oxotellurate(IV) entities. The Eu3+ luminescence spectra and the decay time from different energy levels of the doped compounds were investigated and all detected emission levels were identified. Luminescence properties of the Eu3+ cations have been interpreted in consideration of the now accessible ...
2008-10-01
Energy Technology Data Exchange (ETDEWEB)
We studied whether plasma-etching techniques can use standard screen-printed gridlines as etch masks to form self-aligned, patterned-emitter profiles on multicrystalline-silicon (mc-Si) cells from Solarex. We conducted an investigation of plasma deposition and etching processes on full-size mc-Si cells processed in commercial production lines, so that any improvements obtained would be immediately relevant to the PV industry. This investigation determined that reactive ion etching (RIE) is compatible with using standard, commercial, screen-printed gridlines as etch masks to form self-aligned, selectively doped emitter profiles. This process results in reduced gridline contact resistance when followed by plasma-enhanced chemical vapor deposition (PECVD) treatments, an undamaged emitter surface easily passivated by plasma-nitride, and a less heavily doped emitter between gridlines for reduced emitter recombination. This allows for heavier ...
1997-10-14
Nonstoichiometry and diffusion in ceria and ceria solid solutions
Energy Technology Data Exchange (ETDEWEB)
Some of the results of property measurements of CeO{sub 2} and its solid solutions were reviewed. The deviation from stoichiometry of undoped and doped CeO{sub 2} was presented in several figures, which suggested that CeO{sub 2} fired at high temperatures in air might be nonstoichiometric in some degree. At low temperatures, the deviation from stoichiometry in doped CeO{sub 2} is higher than undoped CeO{sub 2}. As another interesting property, CeO{sub 2} shows high solubility to trivalent cations such as rare earth elements. A possible reason behind this high solubility was presented. The nonstoichiometric defect in undoped CeO{sub 2} and the trivalent cation in solid solution with CeO{sub 2} have to be compensated by other defects. The possible defect structures in this solid solution were reviewed and the most probable structure was chosen based on density measurement and impurity dependence of oxygen diffusion coefficient. Finally the oxygen ...
2003-07-01
New materials synthesis: characterization of some metal-doped antimony oxides
Energy Technology Data Exchange (ETDEWEB)
In order to understand the chemistry of altermetal dopants in antimony oxide, the detailed structural characterization of two ..beta..-Sb/sub 2/O/sub 4/ compounds is reported, Mo-doped ..beta..-Sb/sub 2/O/sub 4/ (1.5 metal%) and V-doped ..beta..-Sb/sub 2/O/sub 4/ (5 metal%). The methods used to characterize these materials are X-ray and neutron diffraction, scanning electron microscopy, Mo K-edge extended X-ray absorption fine structure spectroscopy, and elemental analysis. The atomic position of each of these dopants in Sb/sub 2/O/sub 4/ is radically different as is the overall effect on the host structure. Molybdenum does not substitute for Sb atoms, rather the Mo atoms are found in channels of electron density formed by Sb/sup 3 +/ lone pairs. The two nearest Sb/sup 3 +/ are absent and the oxygen stoichiometry is preserved. The formula is Sb/sub 1.97/Mo/sub 0.015/O/sub 4/. Vanadium incorporates substitutionally for the Sb/sup 3 +/ atoms and ...
1986-10-01
International Nuclear Information System (INIS)
?-Y(IO3)3 and ?-Y(IO3)3 are transparent until 12.8 and 13.4 ?m, respectively; thus they are interesting as a potential laser matrix in the mid- and beginning of the far-infrared. So, in order to investigate the properties of lanthanides- doped anhydrous yttrium iodate, polycrystalline samples of ?-Y1-xNdx(IO3)3 (0.01?x?0.05), ?-Y1-xNdx(IO3)3 (0.001?x?0.1), ?-Y1-xYbx(IO3)3 (0.01?x?0.33) and ?-Y1-xYbx(IO3)3 (0.01?x?0.25) were synthesized. For Nd3+ ions, fluorescent emissions from the 4F3/2 multiplet were observed at 300 K under pulsed laser excitations at 750 nm and for Yb3+, fluorescent emissions from the 2F5/2 multiplet were observed at 300 K under pulsed laser excitations at 980 nm. The decays of all these emissions were measured. They are exponential and the fluorescence lifetimes are in the range 0.093-0.193 ms for Nd3+ and 0.370-0.541 ms for Yb3+, depending on the nature of the host and the concentration of doping.
2009-03-01
Intrinsic magnetism in Fe doped SnO2 nanoparticles
International Nuclear Information System (INIS)
Iron doped semiconducting nanoparticles Sn1-xFexO2 with x=0, 0.001, 0.002, 0.003, 0.004, 0.01 and 0.03 were prepared by a sol-gel method. The X-ray diffraction, Transmission Electron Microscopy measurements confirm the rutile structure with no impurity phase. The three characteristic lines of electron spin resonance (ESR) are observed in the doped samples for all compositions, which is a clear evidence for rhombic Fe3+ in rutile phase. The line width of ESR increases with increase in Fe concentration due to induced disorder. The spin-pumping effect is observed at temperatures below 250 K for the samples with x=0.01 and 0.03. However, based on the Curie-Weiss susceptibility, iron is in paramagnetic state and is subject to weak antiferromagnetic interaction. Blue shift in the optical band gap is observed with increase in the Fe content. -- Graphical abstract: The ESR spectra reveal that the nature of Fe in Sn1-xFexO2 samples is isolated rhombic ...
2011-01-01
We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that ...
1994-04-04
International Nuclear Information System (INIS)
We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for ...
International Nuclear Information System (INIS)
Three ternary austenitic alloys (Fe-15Cr-25Ni, Fe-15Cr-25Ni-0.04P, Fe-15Cr-45Ni in both annealed and cold worked conditions) were irradiated at 465 C to 0.15, 0.28, and 0.42 dpa at above core position in the Fast Flux Test Facility utilizing the Materials Open Test Assembly to study the separate and synergistic effects of He/dpa ratio, phosphorus addition, nickel content and cold work level on microstructural evolution and hardening. The helium/dpa ratio was varied by isotopic doping with "5"9Ni to enhance the production rate of helium. The helium production rate was evaluated to be 62 appm He/dpa in the "5"9Ni-doped specimens and 0.26 appm He/dpa in the undoped specimens. Transmission electron microscopic examinations revealed that alloy composition affected significantly the evolution of microstructure during irradiation. Phosphorus addition prevented the formation of Frank loops through the precipitation of phosphide. Nickel content ...
1994-06-20
International Nuclear Information System (INIS)
Doping of manganese (Mn3+/Mn4+) into the Aurivillius phase Pb1-xBi4+xTi4-xMnxO15 was carried out using the molten salt technique for various Mn concentrations (x=0, 0.2, 0.4, 0.6, 0.8, and 1). Single phase samples could be obtained in the composition range with x up to 0.6 as confirmed by X-ray and neutron diffraction analysis. Dielectric measurements show a peak at 801, 803, 813 and 850 K for samples with x=0, 0.2, 0.4, and 0.6, respectively, related to the ferroelectric transition temperature (Tc). The main contribution of the in-plane polarization for x?0.2 which was calculated from the atomic positions obtained by the structure analysis is the dipole moment in the Ti(1)O6 layer; however, for x?0.4 the polarization originates from the dipole moment in the Ti(2)O6 layer. Mn doping in the Pb1-xBi4+xTi4-xMnxO15 does not show any long range magnetic ordering. -- Graphical abstract: The dipole moment of TiO6 dependence of x in ...
2011-05-01
Wavelength shift of lasing from a dye-doped asymmetrically deformed liquid jet
International Nuclear Information System (INIS)
We examined the spectral behaviors of lasing from a asymmetrically deformed liquid jet (a ? 14 ?m) which is induced by a laterally flowing gas. Th liquid sample was methanols which contains DCM dye. When n distortion is induced, the lasing spectrum appears as two periodic peaks which are corresponding to the resonance modes of cylindrical cavity. As the distortion parameter exceeds about 4%, the lasing spectrum shifts continuously to short wavelength. When the distortion parameter reaches ? 10%, the amount of blue shift was ? 30 nm. The blue shift can be explained as the shift of optimum wavelength of threshold curves. From the absorption and fluorescence curve of liquid sample, we estimated the spoiled Q with the distortion parameter.
1997-11-01
Two-step template-free route for synthesis of TiO2 hollow spheres
British Library Electronic Table of Contents (United Kingdom)
The TiO2 hollow microspheres were prepared by microwave-assisted solvothermal treatment without template. The morphology and the phase of TiO2 hollow microspheres were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HR-TEM), and BET surface areas. The results show that the particles have hollow structures and the shell was covered by nanocrystals and have higher specific surface area. The possible formation mechanism of hollow TiO2 spherical structures has simply been proposed. The activity was evaluated by the photocatalytic degradation of methyl orange (MO). The results show that the particles having specific surface area show higher photocatalytic activity. It can be attribute to the doped ...
2011-01-01
British Library Electronic Table of Contents (United Kingdom)
The treatment of peat with the solutions of phosphoric, citric, and oxalic acids in concentrations of 10???4 and 10???2 mol/l at solid phase to liquid ratios of 1: 2.5 and 1: 5 increased the absorption of ammonia by 6.4???39.7%. The absorption of ammonia was higher than the concentration of doping ion-exchange groups by a factor of 5???2000. With the use of EPR and IR spectroscopy, it was found that this phenomenon was caused by the transformation of polyconjugation systems as a result of the interaction of acids with the organic matrix of peat by a macrocoordination mechanism, which also improved the technological characteristics of the resulting sorbents. The absence of the destruction of organic matter with the use of low concentrations of weak acids makes it possible to use these sorbe...
2011-01-01
Thermoelectric properties of ZnO nanowires: A first principle research
British Library Electronic Table of Contents (United Kingdom)
By means of ab-initio electronic structure calculation and one-dimensional Boltzmann transport equation solution, we investigate the size dependent thermoelectric (TE) properties of n-type ZnO nanowires (NWs) and surface passivation effects. As demonstrated by our calculations, largest figure of merit ZT achievable in thin NWs is larger than that in wide NWs, whereas being restrained by higher demand of n-type doping. Moreover, bare NWs are superior in TE application comparing with the passivated. To compete with conventional TE materials, lattice thermal conductivity of ZnO NWs should be at least 2 orders of magnitude lower than bulk value.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Fatigue tests were accomplished with a series of specimens doped with trace elements of a hardened Fe-Ni-Cr alloy, cast and hardened with intermetallic phases for determining the influence of these elements on the high temperature strength properties. The results of extensive fatigue tests show that even small contents of Te, Bi, Se, Pb, Tl and Zn considerably influence the life and creep processes especially after longer running periods, when added individually or combinedly. In contrast to this, the fatigue ductility is reduced by trace element additions even with short running periods. The order in which the metallic trace elements influence the fatigue properties nearly correlates with earlier work concerning Ni- and Co-superalloys. (orig.)
1993-01-01
Energy Technology Data Exchange (ETDEWEB)
As a continuation of our previous study, further experiments were performed on Li[sub 3]PO[sub 4]-Li[sub 2]S-SiS[sub 2] lithium ion conductive glass. In the present study, we employed a twin roller for quenching process instead of liquid nitrogen. We found that the glass forming region expands by twin roller technique and conductivity up to 1.5x10[sup -3] S/cm was achieved. Structural analysis on the glass revealed that Li[sub 3]PO[sub 4] doping changes the glass structure of Li[sub 2]S-SiS[sub 2], thereby enhancing the electrical conductivity
1994-02-01
Spontaneously generated atomic entanglement in free space: reinforced by incoherent pumping
We study spontaneously generated entanglement (SGE) between two identical multilevel atoms in free space via vacuum-induced radiative coupling. We show that the SGE in two-atom systems may initially increase with time but eventually vanishes in the time scale determined by the excited state lifetime and radiative coupling strength between the two atoms. We demonstrate that a steady-state SGE can be established by incoherently pumping the excited states of the two-atom system. We have shown that an appropriate rate of incoherent pump can help producing optimal SGE. The multilevel systems offer us more chanel to establish entanglement. The system under consideration could be realized in a tight trap or atoms/ions doped in a solid substrate.
2009-01-01
Simple chemical method for nanoporous network of In2S3 platelets for buffer layer in CIS solar cells
British Library Electronic Table of Contents (United Kingdom)
Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic b-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84eV for indium sulfide platelets. Ph...
2008-01-01
Screening study of mixed transition-metal oxides for use as cathodes in thermal batteries
Energy Technology Data Exchange (ETDEWEB)
Over 100 candidates were examined, including commercial materials and many that were synthesized in house. The mixed oxides were based on Ti, V, Nb, Cr, Mo, W, Mn, Fe, Co, Ni, and Cu doped with other transition metals. A number of individual (single-metal) oxides were included for comparison. The candidates were tested in single cells with Li(Si) anodes and separators based on LiCl-KCl eutectic. Screening was done under constant-current conditions at current densities of 125 me/cm{sup 2} and, to a lesser extent, 50 me/cm{sup 2} at 500 C. Relative performance and limitations of the oxide cathodes are discussed.
1996-05-01
International Nuclear Information System (INIS)
Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)
2004-01-01
Preparation of reactor tube by welding a porous membrane with a non-porous ceramic tube
Energy Technology Data Exchange (ETDEWEB)
In the course of designing a catalytic porous membrane reactor for experimental studies, both inside and outside of the non-reaction zones as well as the two ends of the membrane need to be completely sealed to ensure that there is no flow across the membrane in the non-reaction zone. Experiments show that up to 50% of the total flow across the membrane may be contributed by the axial flow along the wall of the non-reaction zones if only one side of the membrane is sealed. Another problem that cannot be solved by sealing is the capillary flow of the catalyst along the tube wall into the non-reaction zones when the catalyst is doped on the membrane. One of the best ways to avoid this axial flow of catalyst would be to use non-porous tubes in the non-reaction zones and join them with the porous membrane tube. In doing so, the cost of the membrane reactor could be reduced simply because shorter membrane tube is needed.
1994-12-31
Optoelectronic devices grown by metallo-organic chemical vapor deposition
International Nuclear Information System (INIS)
The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.
International Nuclear Information System (INIS)
Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)
2008-12-01
Optimal design and preparation of beta-SiAlON multiphase materials from natural clay
International Nuclear Information System (INIS)
Beta-SiAlON powders have been synthesized using natural clay containing kaolin and quartz by carbothermal reduction and nitridation (CRN), then beta-SiAlON bonded corundum multiphase materials have been sintered using the as prepared powders. The results indicated that both the holding time and sintering temperature are relatively significant in accordance with optimal analysis by orthogonal method. Reaction process can be briefly interpreted by means of X-ray Diffraction and Difference Temperature Analysis as well as phase diagram principle. Bending strength and bulk density were measured in SiAlON in situ bonded corundum materials with doped various sintering agents. Furthermore, the relevant mechanical properties and microstructure were discussed in detail.
Micromachining of CVD diamond films using a focused ion beam
Energy Technology Data Exchange (ETDEWEB)
Grooving CVD diamond films using a focused ion beam (FIB) to quarry micro parts is described. The substrate-side surface of a polycrystalline diamond film which is prepared by means of microwave plasma CVD, is able to be grooved by a focused Ga ion beam scanned straight repeatedly. The groove has cross section whose shape is like an inverted Gaussian distribution curve. And the surface roughness of the films before grooved influences that of grooves. Under the same irradiation conditions, deeper, narrower, in short, high aspect ratio grooves are obtained on B-doped semiconducting microwave plasma CVD diamond films. Coating electrical conductive material is also effective method to obtain high aspect ratio grooves. It is supposed that these results are due to the degree of electrification on the surface and that FIB irradiation is a suitable method for micromachining semiconducting diamond films.
1995-12-31
Material-induced shunts in multicrystalline silicon solar cells
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-15
Material-induced shunts in multicrystalline silicon solar cells
International Nuclear Information System (INIS)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-01
Material-induced shunts in multicrystalline silicon solar cells
British Library Electronic Table of Contents (United Kingdom)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-01-01
Magnetization of undoped 2-leg S=1/2 spin ladders in La{sub 4}Sr{sub 10}Cu{sub 24}O{sub 41}
Energy Technology Data Exchange (ETDEWEB)
Magnetization data of single crystalline La{sub 4}Sr{sub 10}Cu{sub 24}O{sub 41} are presented. In this compound, doped spin chains and undoped spin ladders are realized. The magnetization, at low temperatures, is governed by the chain subsystem with a finite interchain coupling which leads to short range antiferromagnetic spin correlations. At higher temperatures, the response of the chains can be estimated in terms of a Curie-Weiss law. For the ladders, we apply the low temperature approximation for a S = 1/2 2-leg spin ladder.
2007-09-01
Jump in the air gasification rate of potassium-doped cellulosic chars
Energy Technology Data Exchange (ETDEWEB)
Chars prepared from potassium-exchanged carboxy methyl cellulose at several heat treatment temperatures (HTTs) were gasified in air isothermally at selected gasification temperatures (GTs) in the range 633-893 K to investigate the catalytic effectiveness of potassium species. The chars displayed a noticeable jump in gasification rate at a particular gasification temperature (called jump temperature, T{sub j}). The magnitude of jump was much less than that reported for copper and nickel catalysis, but comparable with that for calcium catalysis. Increase in HTT caused a decrease in the jump temperature of chars in contrast with the increase observed in copper, nickel and calcium catalysis; also the magnitude of jump did not decrease, but remained unaltered, on increasing HTT. The different behavior of potassium catalysis is correlated to a change in the chemical state of potassium at higher HTT. The results reveal the dependence of jump phenomenon on chemical state and dispersion of ...
2010-12-15
Interactions at the cofired interface of Ag/Pd electrode and lead-based ferroelectrics
Energy Technology Data Exchange (ETDEWEB)
In the present study, element interdiffusions at the cofired interface of 9/1 Ag/Pd electrode and lead magnesium niobate (PMN)-based ferroelectrics were investigated using Auger Electron Spectroscopy (AES). Intense interdiffusions at the interface were observed while Ag and Pd could penetrate into the ceramics for about 1 {mu}m. Ag-doping experiments were carried out to further study the effects of Ag diffusion on electrical properties of the ceramics. The results showed that Ag could be incorporated into solid solution of the ceramics as Ag{sup +}. As a whole, the Curie temperature (Tc) and dielectric constant of the ceramics decreased with Ag addition. However, Ag addition had no obvious effect on the insulation resistivity. The results inferred that Ag{sup +} could substitute for Pb{sup 2+} at A site of ABO{sub 3} lattice, thereby oxygen vacancies were generated.
2003-05-25
Hydrogen effect on the deformation and annealing textures in the #beta# titanium alloy VT35
International Nuclear Information System (INIS)
A study is made into textures of deformation and primary recrystallization forming in a #beta#-titanium alloy doped with hydrogen in amounts from 0.04 to 0.55 mass. %, on cold rolling with a 70%-reduction and dehydrogenating annealing at 860 deg C. It is shown that a volume fraction of recrystallization texture components is determined by the nature of corresponding deformation texture, in its turn, depending on hydrogen concentration in the alloy. At low hydrogen contents the main texture components are #left brace#111#right brace# and #left brace#001#right brace#. A hydrogen content increase up to 0.09 - 0.18 mass. % results in formation of dominant components of #left brace#111#right brace# and #left brace#112#right brace#
2003-12-01
The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.
2000-02-01
Energy Technology Data Exchange (ETDEWEB)
The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.
2000-02-01
High frequency converters for thermophotovoltaic applications
Energy Technology Data Exchange (ETDEWEB)
Thermophotovoltaic (TPV) converters were developed and tested at the heat source operating temperature of 1,700 K. Rare-earth-doped yttrium aluminum garnet (YAG) and lutetium yttrium aluminum garnet (Lu, YAG) selective emitters, as well as a blackbody emitter, were coupled to InGaAs/InP photovoltaic (PV) cells and bandpass/infrared (IR) reflector filters. YAG-based selective emitters were adopted with Ho, Tm, and Er. PV cells had bandgaps of 0.51, 0.57, and 0.69 eV. Converter energy conversion efficiencies approaching 30%, as well as electrical output power densities near 2 W/cm{sup 2} were demonstrated. The overall performance of the filtered blackbody-based converter was found to be superior to the selective emitter YAG-based converters. The details of the measurements performed on the above converters and their individual components are presented.
1996-12-31
Formation of complex Langmuir and Langmuir-Blodgett films of water soluble rosebengal
British Library Electronic Table of Contents (United Kingdom)
This communication reports the formation of complex Langmuir monolayer at the air-water interface by charge transfer types of interaction with the water soluble N-cetyl Formula Not Shown -trimethyl ammonium bromide (CTAB) molecules doped with rosebengal (RB), with the stearic acid (SA) molecules of a preformed SA Langmuir monolayer. The reaction kinetics of the formation of RB-CTAB-SA complex monolayer was monitored by observing the increase in surface pressure with time while the barrier was kept fixed. Completion of interaction kinetics was confirmed by FTIR study. This complex Langmuir films at the air-water interface was transferred onto solid substrates at a desired surface pressure to form multilayered Langmuir-Blodgett films. Spectroscopic characterizations reveal some molecular lev...
2007-01-01
Energy Technology Data Exchange (ETDEWEB)
A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.
1999-01-01
Energy Technology Data Exchange (ETDEWEB)
A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.
1999-08-31
International Nuclear Information System (INIS)
The effect of both dopant and neutron radiation on the optical and thermal properties of polyvinyl chloride (PVC) has been studied. The doped samples with Pb and Cd were irradiated with a 14 MeV-neutron fluence in the range 7-28.8 x 10"9 n/cm"2. The optical energy gap E_o_p exhibits a significant dependence on the type of additive and the neutron irradiation fluence. The specific heat at constant pressure C_p showed a nonmonotonical change with radiation fluence. The results of this study show that PVC:Pb behaves as a crystalline structure which is only slightly affected by neutron irradiation, while PVC:Cd is highly affected. (author).
1994-11-01
The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.
Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors
Energy Technology Data Exchange (ETDEWEB)
By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.
2009-08-15
Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD
Energy Technology Data Exchange (ETDEWEB)
Microcrystalline silicon carbide ({mu}c-SiC) was prepared at low substrate temperatures using Hot Wire chemical vapor deposition (HWCVD). High crystalline volume fractions were achieved at high hydrogen dilution and high deposition pressure. Without intentional doping, such material shows high dark conductivity and high optical absorption below the band gap. The material prepared at low deposition pressure or low hydrogen dilution, on the other hand, shows much lower conductivity and sub-gap absorption, but high spin densities up to 5 x 10{sup 19} cm{sup -3}. This high absorption can be attributed to free carriers, different to {mu}c-Si:H where a correlation between the sub-gap absorption and the spin density is observed.
2008-01-15
International Nuclear Information System (INIS)
A series of cyclic voltammetry, chronoamperometry and electrochemical impedance experiments have been carried out in order to investigate the effect of cathode composition and porosity on the electrochemical characteristics of strontium-doped lanthanum, praseodymium and gadolinium cobaltite cathodes. The impedance responses at different electrode potentials of the half cell and symmetric single cell setups are compared and analyzed by the equivalent circuit modeling method. The deconvolution of impedance spectra for single cell cathode and anode reactions contributions based on the results of simultaneous analysis of half cells and symmetric single cells has been made by differential impedance real part vs. ac frequency plot analysis method. Noticeable influence of cathode chemical composition, meso-porosity and macro-porosity on the electrochemical activity of the oxygen electroreduction has been demonstrated. Seeming activation energy values have been calculated ...
2010-11-01
Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon
International Nuclear Information System (INIS)
N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code
2001-12-01
International Nuclear Information System (INIS)
The effect of lattice damage caused by room temperature irradiations with products of "1"0B(n,#alpha#)"7Li reactions and "2"3"5U fissions and with fast neutrons on transition curves, quenching curves, and lattice constants of Nb_3Sn, Nb_3Al, Nb_3(Al,Ge), and V_3Si have been investigated. The critical currents in transverse magnetic fields could be increased up to more than one order of magnitude. For heavily irradiated samples drastically reduced values for the critical currents, the upper critical fields, and the transition temperatures were observed. The lattice constants were increased up to 0.5 percent by irradiation. (U.S.).
Cluster Geometry & Inclinations from Deprojection Uncertainties
{The determination of cluster masses is a complex problem that would be aided by information about the cluster shape and orientation (along the line-of-sight).} {It is in this context, that we have developed a scheme for identifying the intrinsic morphology and inclination of a cluster, by looking for the signature of the true cluster characteristics in the inter-comparison of the different deprojected emissivity profiles (that all project to the same X-ray brightness distribution) and by using SZe data when available.} {We deproject the cluster X-ray surface brightness profile under the assumptions of four different geometry and inclination configurations for the observed system; these 4 configurations correspond to four extreme geometry+inclination scenarios. The deprojection in question is performed by the non-parametric algorithm DOPING. The formalism is tested with model systems and then is applied to a sample of 24 clusters. While the shape determination is ...
2008-01-01
British Library Electronic Table of Contents (United Kingdom)
A study of the stability of conducting fabrics of polyester (PES) coated with polypyrrole/PW12O40^3^- (organic/inorganic hybrid material) in different pH solutions (1, 7, 13) has been done. Washing tests were also done in views of its possible application in electronic textiles such as antistatic clothing. X-ray photoelectron spectroscopy (XPS) studies have been done to quantify the amount of counter ion that remains in the polymer matrix and determine the doping ratio (N^+/N) after the different tests. Scanning electron microscopy (SEM) was also used to observe morphological differences after the different tests. Surface resistivity changes were measured by means of electrochemical impedance spectroscopy (EIS). Scanning electrochemical microscopy (SECM) was employed to measure changes in ...
2011-01-01
Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions
Energy Technology Data Exchange (ETDEWEB)
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).
1997-12-01
Atomic scale models of Ion implantation and dopant diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.
1999-03-01
A study on yellow luminescence in O and C ion implanted GaN
International Nuclear Information System (INIS)
The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)
2008-08-01
A phenomenological model for the macroscopic characteristics of irradiated silicon
International Nuclear Information System (INIS)
The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.
A novel EPROM device fabricated using focused boron ion-beam implantation
Energy Technology Data Exchange (ETDEWEB)
A novel floating-gate avalanche injection (FAMOS) type erasable programmable read-only memory (EPROM) device is demonstrated, with a heavily focused ion-beam (FIB) implanted region of about 0.2-..mu..m width at the drain edge of the channel. This heavily B/sup +/-doped region permits a higher electric field near the drain edge, resulting in a remarkable increase of the hot-carrier generation rate, and reduces both the programming voltage and programming time. A three-dimensional device simulator, CADDETH, predicted that the electric field at the drain edge would increase by about six times, which would lead to hot-carrier generation efficiency three orders of magnitude higher.
1987-06-01
Yttrium doped La_1_-_xY_xO_0_._9F_0_._1FeAs superconductors: Hall and thermopower studies
International Nuclear Information System (INIS)
The effect of yttrium substitution at the lanthanum site on the superconducting properties of La_1_-_xY_xO_0_._9F_0_._1FeAs ('x' = 0, 0.10, 0.20, 0.30, 0.50 and 0.60) oxypnictides has been studied. Powder X-ray diffraction studies confirm single phases till x = 0.1 beyond which minor amount of Y_2O_3 is observed. The temperature dependence of resistivity measurements confirm the superconducting transition temperature (T_c) of 34.8 (#+-#0.05) K and corresponding Meissner transition at 34.3 K in the 'x' = 0.3 composition which is higher than that reported for the parent phase (LaO_0_._9F_0_._1FeAs (T_c = 28 K)). Further increase in the concentration of yttrium leads to broadening and suppression of the superconducting transition. The value of H_c_2 at zero temperature is estimated to be about 60.5 T. The Seebeck coefficient (S) shows a negative sign indicating that the major contribution to the conductivity is by electrons. The Hall coefficient (R_H) also remains negative throughout the ...
2010-06-01
International Nuclear Information System (INIS)
The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the studied doping range. The thermally activated oxygen motion starts to develop above ...
2011-01-01
Thermoluminescence emission of X-irradiated Eu{sup 2+} doped KBr single crystals
Energy Technology Data Exchange (ETDEWEB)
In this paper we discuss the results of thermoluminescence (TL) studies carried out on freshly quenched crystals of KBr doped with {approx} 50 ppm of Eu{sup 2+} ions which were X-irradiated at room temperature. The TL glow curve of this phosphor material consists of three glow peaks at 355, 376 and 398 K whose intensities increased as a function of X-irradiation time. The TL glow peaks were analyzed by the total curve-fitting method in order to obtain the characteristic parameters; activation energy, pre-exponential factor and kinetic order. The spectral character of the emission recorded during thermoluminescence was found to be the same for all glow peaks and consists of a broad band centered at {approx} 420 nm. It is proposed that the model of the TL process most consistent with our experimental results is one in which the Eu{sup 2+} impurity acts as an electron trap during the irradiation process and that the radiation induced center (partner of an center) and ...
1996-12-31
Thermoluminescence emission of X-irradiated Eu"2"+ doped KBr single crystals
International Nuclear Information System (INIS)
In this paper we discuss the results of thermoluminescence (TL) studies carried out on freshly quenched crystals of KBr doped with #approx# 50 ppm of Eu"2"+ ions which were X-irradiated at room temperature. The TL glow curve of this phosphor material consists of three glow peaks at 355, 376 and 398 K whose intensities increased as a function of X-irradiation time. The TL glow peaks were analyzed by the total curve-fitting method in order to obtain the characteristic parameters; activation energy, pre-exponential factor and kinetic order. The spectral character of the emission recorded during thermoluminescence was found to be the same for all glow peaks and consists of a broad band centered at #approx# 420 nm. It is proposed that the model of the TL process most consistent with our experimental results is one in which the Eu"2"+ impurity acts as an electron trap during the irradiation process and that the radiation induced center (partner of an center) and the V_k ...
Simulation of dopant diffusion and activation during flash lamp annealing
International Nuclear Information System (INIS)
A set of advanced models implemented into the simulator Sentaurus Process was applied to simulate ultra shallow junction formation by flash lamp annealing (FLA). The full path transient enhanced diffusion model includes equations for small interstitial clusters (I_2, I_3, I_4), #left brace#3 1 1#right brace# defects and dislocation loops. A dopant-point defect clustering model is used for dopant activation simulation. Several cluster types are considered: B_2, B_2I, B_2I_2, B_3I, B_3I_2, B_3I_3 for boron and As_2, As_2V, As_3, As_3V, As_4, As_4V for arsenic. Different point defect and dopant-point defect pair charge states are taken into account to obtain accurate results in the high doping level region. The flux expressions in the three-phase segregation model include a dependence on the doping level and point defect supersaturation. The FLA process was performed at various peak temperatures in a Mattson Millios"T"M fRTP"T"M system. The ...
2008-12-05
Energy Technology Data Exchange (ETDEWEB)
The optically stimulated luminescence (OSL) results a highly appropriate dosimetric technique for readings of absorbed radiation 'in alive' and 'in situ', as well as in real time. The CVD diamond on the other hand presents excellent qualities like radiation reader thanks to its reproducibility, radiation resistance, biocompatibility and non toxicity. The present work studies the answer of two diamond films pure and polluted with nitrogen (750 ppm) grown by the Chemical Vapor Deposition method (CVD) on silicon substrate (001) irradiated with beta (Sr-90) in the 0.833-100 Gy interval. The optical stimulation was carried out by 40 seconds with infrared laser (830 nm, 0.36 W/cm{sup 2}) and the filter BG-39 (300-600 nm) coupled the PM. The intensity and the decay of the hyperbolic type of the LOE curves were similar in both samples, for the non doped diamond were observed trapping states in 200-380 C being compared with those that it ...
2006-07-01
Mg-doped LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} spinel for cathode materials
Energy Technology Data Exchange (ETDEWEB)
Lithium-ion batteries are becoming more and more important not only for portable electronic devices, but also in prevision of high power electric vehicles. In such an optic, deep studies regarding all the components of a secondary battery are in development. In this study, high voltage cathode materials have been selected. Crystals with spinel structure have a 3D vacancy pathway suitable for Li-ions transport. The material under study was LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} doped with magnesium replacing the nickel. Various samples were synthesized via three different routes: a solid-state method, a modified sol-gel method and a xerogel method. The structure and morphology of the powders were analyzed with HRTEM and XRD. Electrochemical tests were also performed. A wide range of particle sizes (from micro to nanosize) was the result of the different synthesis routes. Unfortunately pure materials were not always obtained. The electrochemical tests showed improvement of ...
2007-12-06
International Nuclear Information System (INIS)
Uniform and transparent thin films of Zn_1_-_xCo_xO (0 #=# 0.035, CoO (cubic) was detected as the secondary phase. Influence of Co addition on the volume fraction of grain boundaries has been interpreted. Increase in Co content in the range 0 #<=# x #<=# 0.10 led to quenching of near-band edge and blue emissions, decrease in band gap energy (E_g) from 3.36 eV to 3.26 eV, decrease in film thickness and refractive index and an increase in extinction coefficient of Zn_1_-_xCo_xO thin films. The change in nature of stress from compressive to tensile with lower to higher doping of Co is corroborative with the angular peak shift of (002) plane of ZnO lattice. An overall increase in microhardness of Zn_1_-_xCo_xO thin films up to x = 0.05 is attributed to change in microstructure and evolution of secondary phase and as the secondary phase separates out the overall stress is released leading to lowering of hardness after this concentration. Hall-Petch behavior is ...
2010-07-01
International Nuclear Information System (INIS)
Immobilization of long-lived fission products (LLFP) such as radioactive Tc, Cs and Sr into #alpha#-SiAlON ceramics was evaluated using stable isotopes instead of radioactive isotopes, and the applicability of #alpha#-SiAlON ceramics as the inert matrix for transmutation of LLFP was investigated. In the case of single addition of SrO, SrCO_3, Cs_2CO_3 or ReO_2 to the starting materials, #alpha#-SiAlON, single phase was not formed after hot-pressing. When Y_2O_3 was added with SrO, SrCO_3 or Cs_2CO_3 to the starting materials (#alpha#-Si_3N_4, AlN and #alpha#-Al_2O_3) in optimum compositions, #alpha#-SiAlON single phase was obtained after hot-pressing at 1700degC or 1800degC. From the EDS analysis, Sr and Y were detected from grains. It is suggested that Y would assist the expansion of interstices of #alpha#-SiAlON lattice, resulting in the incorporation of Sr"2"+ into #alpha#-SiAlON lattice. In the case of Cs addition with Y, Cs was not incorporated into interstices due to much larger ...
2008-06-01
Homogeneity region and thermal stability of neodymium-doped #alpha#-sialon ceramics
International Nuclear Information System (INIS)
Dense sialon ceramics along the tie line between Si_3N_4 and Nd_2O_3#centre dot#9AlN were prepared by hot-pressing at 1,800 C. The materials were subsequently heat-treated in the temperature range 1,300--1,750 C and cooled either by turning off the furnace (yielding a cooling rate (T_c_o_o_l) of #approx# 50 C/min) or quenching (T_c_o_o_l #>=# 400 C/min). It was found necessary to use the quenching technique to reveal the true phase relationships at high temperature, and it was established that single-phase #alpha#-sialon forms for 0.30 #<=# x #<=# 0.51 in the formula Nd_xSi_1_2_-_4_._5_xAl_4_._5_xO_1_._5_xN_1_6_-_1_._5_x. The #alpha#-sialon is stable only at temperatures above 1,650 C, and it transforms at lower temperatures by two slightly different diffusion-controlled processes. Firstly, an #alpha#-sialon phase with lower Nd content is formed together with an Al-containing Nd-melilite phase, and upon prolonged heat treatment thus-formed #alpha#-Sialon decomposes to the more ...
The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for ...
1993-12-31
Effect of magnetic field and pressure on U(Ni_1_-_xPd_x)_2Si_2 single crystals
International Nuclear Information System (INIS)
Single crystals of U(Ni_1_-_xPd_x )_2Si_2 for x = 0.05, 0.10 and 0.15 have been grown. Magnetization and electrical resistivity measurements were performed in a wide range of temperatures, magnetic fields and high pressures in order to study stability of magnetic phases in the solid solutions between UNi_2Si_2 and UPd_2Si_2 with a special emphasis on the type of ground state. In UPd_2Si_2 the simple AFI-type antiferromagnetic structure of U moments is observed at low temperatures. UNi_2Si_2 adopts the uncompensated AF structure (UAF) with the ++- stacking of U moments along the c-axis and consequently this compound exhibits a spontaneous magnetization corresponding to 1/3 of the U moment. The substitution of Pd for Ni leads to a rapid decay of the spontaneous magnetization. The evolution of magnetization and electrical resistivity behavior with Pd doping is tentatively attributed to the coexistence of the AF-I and UAF phases in the ground state of ...
2002-07-01
Diffusion of lithium-6 isotopes in lithium aluminate ceramics using neutron depth profiling
International Nuclear Information System (INIS)
Lithium Ceramics offer tremendous potential as a source for the production of tritium ("3H) for fusion power reactors. Their successful application will depend to a great extent upon the diffusion properties of the "6Li within the matrix. Consequently knowledge of "6Li concentration gradients in the ceramic matrices is an important requirement in the continued development of the technology. In this investigation, the neutron depth profile (NDP) technique has been applied to the study of concentration profiles of "6Li in lithium aluminate ceramics, doped with 1.8%, 50% and 95% "6Li isotopic concentrations. Specimen for analysis were prepared at Battelle (PNL) as pellet discs. Samples for diffusion studies were arranged as diffusion couples in the following manner: 1.8% "6Li discs/85% "6Li powder. Experiments were performed at the Texas A and M Nuclear Science Center Reactor Building, utilizing 1 MW equivalent thermal neutron fluxes 3x10"1"1 n/m"2 s. The depth probed ...
Energy Technology Data Exchange (ETDEWEB)
We examined a catalytic effect of niobium oxide (Nb{sub 2}O{sub 5}) on the hydrogen storage properties of MgH{sub 2} prepared by mechanical ball milling method. The MgH{sub 2} composite doped with 1 mol% Nb{sub 2}O{sub 5} by ball milling for 20 h desorbed hydrogen up to {approx}6 mass% in the temperature range from 200 to 250 {sup o}C at the heating rate of 5 {sup o}C/min under a purified helium flow. After dehydrogenation at 200 {sup o}C, the product showed remarkable hydrogen absorption kinetics. A large amount of gaseous hydrogen up to {approx}4.5 mass% was absorbed even at room temperature under 1 MPa hydrogen pressure within 15 s and finally its capacity reached up to 5 mass%. Furthermore, the valence state of Nb{sub 2}O{sub 5} doped in MgH{sub 2} was examined by X-ray absorption near edge structure (XANES) measurement. The results indicated that additive Nb{sub 2}O{sub 5} was reduced by MgH{sub 2} during mechanical milling. This suggests ...
2006-08-15
International Nuclear Information System (INIS)
The crystal structure, electronic structure, and photoluminescence properties of EuxSi6-zAlz-xOz+xN8-z-x (x=0-0.1, 0xMySi6-zAlz-x-yOz+x+yN8-z-x-y (M=2Li, Mg, Ca, Sr, Ba) have been studied. Single-phase EuxSi6-zAlz-xOz+xN8-z-x can be obtained in very narrow ranges of x?0.06 (z=0.15) and z2+ ions can be incorporated into nitrogen-rich Si6-zAlzOzN8-z. The Eu2+ ion is found to occupy the 2b site in a hexagonal unit cell (P63/m) and directly connected by six adjacent nitrogen/oxygen atoms ranging 2.4850-2.5089 A. The calculated host band gaps by the relativistic DV-X? method are about 5.55 and 5.45 eV (without Eu2+ 4f5d levels) for x=0 and 0.013 in EuxSi6-zAlz-xOz+xN8-z-x (z=0.15), in which the top of the 5d orbitals overlap with the Si-3s3p and N-2p orbitals within the bottom of the conduction band of the host. EuxSi6-zAlz-xOz+xN8-z-x shows a strong green emission with a broad Eu2+ band centered at about 530 nm under UV to near-UV excitation range. The excitation and emission spectra are ...
2008-12-01
Energy Technology Data Exchange (ETDEWEB)
The oxidative dehydrogenation (ODH) of light alkanes is an alternative way for the production of olefins. A wide variety of catalytic systems has been investigated. Vanadium oxide based catalysts were described in the literature as effective catalysts for the ODH of propane. The catalytic activity and selectivity depend on the kind of support material, the kind of dopants and the formation of complex metal oxide phases. In recent papers it was claimed that both orthovanadate and/or pyrovanadate species are selective for the ODH of propane. Niobia based materials were investigated as catalysts for acidic and selective oxidation type reactions. In the ODH of propane niobia exhibited a high selectivity to propene but the conversion of propane was low. V{sub 2}O{sub 5}-Nb{sub 2}O{sub 5} catalysts proved to be catalytically active and selective and showed no formation of oxygenates. In the present study the influence of the niobia dopant of the catalytic properties of V{sub 2}O{sub ...
1998-12-31
Energy Technology Data Exchange (ETDEWEB)
The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the possibility of using this material as a ...
1997-01-01
Understanding and controlling transient enhanced dopant diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of ...
1995-12-31
Understanding and controlling transient enhanced dopant diffusion in silicon
International Nuclear Information System (INIS)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of ...
The role and impact of rubber in poly(methyl methacrylate)/lithium triflate electrolyte
British Library Electronic Table of Contents (United Kingdom)
In this research, new thin freestanding films of poly(methyl methacrylate) (PMMA)/50% epoxidised natural rubber (ENR 50) were doped with lithium triflate, LiCF3SO3 salt was prepared by a solvent casting method. The incorporation of ENR 50 is found to increase the conductivity of PMMA/LiCF3SO3 by two orders of magnitude at room temperature. The highest conductivity achieved was 5.09x10-5Scm-1 at room temperature when 60% of LiCF3SO3 salt was introduced into the PMMA blend containing 10% ENR 50. The formation of excessive hydrogen bonds and interchain crosslinking limit the performance of the blend at higher concentrations of ENR 50. The ionic conduction mechanisms in PMMA/ENR 50/LiCF3SO3 electrolytes obey the Arrhenius rule in which the ion transport in these materials is thermally assisted...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO{sub 2}-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also decreases the doping density in the case of ...
2006-12-05
International Nuclear Information System (INIS)
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO_2-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also decreases the doping density in the case of the ...
2006-12-05
The effect of boron implant energy on transient enhanced diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results imply there are at least two sources of TED ...
1997-02-01
Synthesis of novel anode Li4Ti5O12/C with PAN as carbon source and its electrochemical performance
British Library Electronic Table of Contents (United Kingdom)
A newly carbon-doped Lithium titanate (Li4Ti5O12/C) spinel-type composite material was routinely prepared by a simple solid-state reaction method using carbonization of polyacrylonitrile (PAN) as carbon source in an inert atmosphere. Impedance measurement shows that the resistance of the composite electrode is substantially lower than that of the pure one. Electrochemical performances of the prepared materials were investigated. Results indicate that the composite materials obtained with 10wt.% PAN shows relatively higher specific capacity, better cycling and higher rate performance. The first discharge specific capacity of 158mAhg^-^1, 138mAhg^-^1, and 121mAhg^-^1 were obtained at 0.2C rate, 1/3C rate, and 3C rate at room temperature, respectively. And it was also found that tap density o...
2011-01-01
Surface hardening utilizing high-density plasma nitriding on stainless steel alloys
Energy Technology Data Exchange (ETDEWEB)
By using a plasma nitriding procedure at the PUPR Mirror Cusp Plasma machine, surface hardness is increased in 302/304-type stainless steel samples by exposing them to high-ion-density plasma at high vacuum. This method successfully dopes the surface of the material with strengthening nitrogen ions, without the use of chemical procedures that sacrifice the resistance to corrosion of the given material. A 500 V negative bias is placed on the sample exposed to the nitrogen plasma, where high-energy ions are therefore attracted and immersed into the metallic matrix microns into the surface of the stainless steel. This potential maintains a constant surface temperature at approximately 800 deg. C. The plasma parameters including ion density and plasma temperature were diagnosed using single Langmuir probes. The stainless steel samples were then tested using scanning electron microscopy (SEM), and Vickers micro-hardness testing to determine the increment in the surface ...
2008-10-15
Surface hardening utilizing high-density plasma nitriding on stainless steel alloys
International Nuclear Information System (INIS)
By using a plasma nitriding procedure at the PUPR Mirror Cusp Plasma machine, surface hardness is increased in 302/304-type stainless steel samples by exposing them to high-ion-density plasma at high vacuum. This method successfully dopes the surface of the material with strengthening nitrogen ions, without the use of chemical procedures that sacrifice the resistance to corrosion of the given material. A 500 V negative bias is placed on the sample exposed to the nitrogen plasma, where high-energy ions are therefore attracted and immersed into the metallic matrix microns into the surface of the stainless steel. This potential maintains a constant surface temperature at approximately 800 deg. C. The plasma parameters including ion density and plasma temperature were diagnosed using single Langmuir probes. The stainless steel samples were then tested using scanning electron microscopy (SEM), and Vickers micro-hardness testing to determine the increment in the surface ...
2008-10-01
Study on pyrolysing behavior of NiO-SDC composite particles prepared by spray pyrolysis technique
Energy Technology Data Exchange (ETDEWEB)
The NiO-samaria doped ceria (SDC) composite powders were prepared by spray pyrolysis technique at temperatures between 400 and 1000 C. The variation of the particle structure was investigated by X-ray diffraction (XRD), X-ray absorption fine structure (XAFS), scanning electron microscope (SEM), and transmission electron microscope (TEM)-energy-dispersive X-ray spectroscopy (EDS). The thermal analysis of raw materials was also carried out. The following facts became clear in this study. Ceria and nickel have been already separated at 400 C. Samaria is amorphous phase below 600 C, and is dissolved in ceria at 600 C or higher. Samaria is distributed uniformly inside the particles before dissolving in ceria. The thermal decomposition temperatures of metal nitrate are: cerium < nickel < samarium. The results of these analyses were explained without contradiction. It was found that it is important to optimize the state of liquid drop before thermal ...
2007-03-15
Structure of Ce-doped Bi/sub 2/(MoO/sub 4/)/sub 3/ as determined by neutron profile refinement
Energy Technology Data Exchange (ETDEWEB)
The structure of Bi/sub 1.8/Ce/sub 0.2/(MoO/sub 4/)/sub 3/ has been refined with powder neutron diffraction data by the Rietveld method. The structure can be derived by severely distorting the scheelite structure (AMO/sub 4/) and is perhaps better written A/sub (2/3)/phi/sub (1/3)/MO/sub 4/, where phi = cation vacancy. Of the two bismuth atom sites, cerium preferentially occupies the more symmetric of the two (Bi(2) in the structure) with some cerium found in the scheelite subcell vacancies also. This site preference is understood by examining the symmetries of the two Bi sites. Crystal data: monoclinic, space group P2/sub 1//c, Z = 4, a = 7.697(2), b = 11.535(3), c = 11.944(3), ..beta.. = 115.19.
1984-05-01
Spectroscopic properties of Eu sup 3+ in lanthanum chlorotungstates
Energy Technology Data Exchange (ETDEWEB)
The spectroscopic properties of Eu{sup 3+} doped into two lanthanum chlorotungstates matrices, namely LaWO{sub 4}Cl (1-1) and La{sub 3}WO{sub 6}Cl{sub 3}(3-1), are investigated. The fluorescence spectra of these compounds, recorded at room and liquid nitrogen temperatures, show that the lanthanide ion occupies only one site with the low symmetry, C{sub s}, in both cases. From the energy level schemes of the {sup 7}F{sub J} levels (J = 0, 1, 2, 3, 4, 5), two sets of crystal field parameters (cfp) are deduced, in a C{sub 2v} approximated point symmetry (i.e., 9 cfp), simulating the experimental data, correctly. Furthermore, for the 3-1 compound, the data is complete enough to extend the calculations to the real point group, C{sub s} (14 cfp).
1990-11-01
Energy Technology Data Exchange (ETDEWEB)
A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second mechanism), can be explained. Numerical ...
2004-11-17
International Nuclear Information System (INIS)
A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second mechanism), can be explained. Numerical computations of high concentration phosphorus ...
2004-11-17
Energy Technology Data Exchange (ETDEWEB)
The Yb{sup 3+}-doped non-linear rare-earth calcium oxoborate crystals GdCa{sub 4}O (BO{sub 3}){sub 3} (GdCOB) and YCa{sub 4}O(BO{sub 3}){sub 3} (YCOB) were investigated by low-temperature absorption and selective excitation spectroscopy. The selective excitation and emission spectra revealed the spectral features of the main Yb{sup 3+} centre and the principal minority one in both crystals. The energy level schemes for these centres in both hosts, as well as structural assignments, were proposed. It was established that the minority centre, which represents about 10% of the total intensity and was assigned to Yb{sup 3+} in a Ca{sup 2+} site, is not a trap but an energy donor for the main centre. Common features of and differences between the vibronic structure of the two centres in GdCOB and YCOB are discussed. The existence of additional features in YCOB:Yb spectra is pointed out. (author)
2002-02-11
Selective excitation study of Yb"3"+ in GdCa_4O(BO_3)_3 and YCa_4O(BO_3)_3
International Nuclear Information System (INIS)
The Yb"3"+-doped non-linear rare-earth calcium oxoborate crystals GdCa_4O (BO_3)_3 (GdCOB) and YCa_4O(BO_3)_3 (YCOB) were investigated by low-temperature absorption and selective excitation spectroscopy. The selective excitation and emission spectra revealed the spectral features of the main Yb"3"+ centre and the principal minority one in both crystals. The energy level schemes for these centres in both hosts, as well as structural assignments, were proposed. It was established that the minority centre, which represents about 10% of the total intensity and was assigned to Yb"3"+ in a Ca"2"+ site, is not a trap but an energy donor for the main centre. Common features of and differences between the vibronic structure of the two centres in GdCOB and YCOB are discussed. The existence of additional features in YCOB:Yb spectra is pointed out. (author)
2002-02-11
Energy Technology Data Exchange (ETDEWEB)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the range of annealing temperatures of ...
1997-11-01
International Nuclear Information System (INIS)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n junction formation, TED is ...
Recent trends in heavy-fermion physics
Energy Technology Data Exchange (ETDEWEB)
We discuss recent results obtained for the heavy-fermion metals UPd{sub 2}Al{sub 3} and YbRh{sub 2}Si{sub 2}. UPd{sub 2}Al{sub 3} is the first among all superconductors for which tunneling and inelastic neutron-scattering data highlight a non-phononic, i.e., magnetic-exciton mediated, pair state. YbRh{sub 2}Si{sub 2} represents a model system exhibiting pronounced non-Fermi liquid effects above a weak antiferromagnetic phase transition at T{sub N}=70 mK. Upon approaching the quantum critical point (T{sub N}{yields}0), by low doping with Ge, one observes for T<0.3 K disparate behavior in the temperature dependences of both the electrical resistivity and the electronic specific heat as well as a Curie-Weiss law in the uniform magnetic susceptibility, implying uncompensated large 4f moments. These observations indicate a break up of the composite quasiparticles into their local f-spin and itinerant conduction-electron parts.
2003-05-01
Recent advances and developments in refractory alloys
Energy Technology Data Exchange (ETDEWEB)
Refractory metal alloys based on Mo, W, Re, Ta, and Nb (Cb) find applications in a wide range of aerospace applications because of their high melting points and high-temperature strength. This paper, presents recent progress in understanding and applications of these alloys. Recent studies to improve the oxidation and mechanical behavior of refractory metal alloys, and particularly Nb alloys, are also discussed. Some Re structures, for extremely high temperature applications (> 2000C), made by CVD and P/M processes, are also illustrated. Interesting work on the development of new W alloys (W-HfC-X) and the characterization of some commercial refractory metals, e.g., K-doped W, TZM, and Nb-1%Zr, continues. Finally, recent developments in high temperature composites reinforced with refractory metal filaments, and refractory metal-based intermetallics, e.g., Nb{sub 3}Al, Nb{sub 2}Be{sub 17}, and MoSi{sub 2}, are briefly described.
1993-11-01
High pressure xenon ionization chamber detectors are possible alternatives to traditional thallium doped sodium iodide (NaI(Tl)) and hyperpure germanium as gamma spectrometers in certain applications. Xenon detectors incorporating a Frisch grid exhibit energy resolutions comparable to cadmium/zinc/telluride (CZT) (e.g. 2% (at) 662keV) but with far greater sensitive volumes. The Frisch grid reduces the position dependence of the anode pulse risetimes, but it also increases the detector vibration sensitivity, anode capacitance, voltage requirements and mechanical complexity. We have been investigating the possibility of eliminating the grid electrode in high-pressure xenon detectors and preserving the high energy resolution using electronic risetime compensation methods. A two-electrode cylindrical high pressure xenon gamma detector coupled to time-to-amplitude conversion electronics was used to characterize the pulse rise time of deposited gamma photons. Time ...
2000-01-01
Energy Technology Data Exchange (ETDEWEB)
Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)
2004-06-01
Preparation of TiO2/NiO composite particles and their applications in dye-sensitized solar cells
British Library Electronic Table of Contents (United Kingdom)
This study investigates the applicability of n-type TiO2 and p-type NiO on the FTO-glass (Fluorine doped tin oxide, SnO2:F) substrate of the working electrode in a dye-sensitized solar cell (DSSC). The working electrode was designed and fabricated by depositing a film of TiO2/NiO composite particles, which were prepared by mixing the Ni powder with TiO2 particles using dry mixing method, on a FTO-glass substrate using a spin coating process. The working electrode was then immersed in the solution of N-719 (Ruthenium) dye at a temperature of 70degreeC for 6h. Moreover, a thin film of platinum (Pt) was deposited on the FTO-glass substrate of the counter electrode using an E-beam evaporator. Finally, the DSSC was assembled, and the short-circuit photocurrent, the open-circuit photovoltage and...
2011-01-01
Potassium deposition on a thiophene-terminated alkanethiol monolayer
International Nuclear Information System (INIS)
Potassium deposition in ultrahigh vacuum on 12-(3-thienyl)dodecanethiol monolayers assembled on gold surfaces has been investigated using X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Angle-resolved XPS indicates that initially deposited potassium penetrates the self-assembled monolayer (SAM) and diffuses to the SAM/Au interface. Even after large metal doses, the presence of thiophene ring valence electronic states in the UPS spectra confirms that most of the thiophene rings (at the SAM/vacuum interface) are not covered by potassium. The binding energy shifts of the thiophene ring valence states and the C1s and thiophene S2p peaks, referenced to the Fermi level, are due to the work function changes of the gold substrate. This indicates that these electronic states are pinned to the vacuum level, in contrast to the thiolate S2p orbital, which is pinned to the Fermi level. For large potassium doses, the appearance of new features in the UPS spectrum indicates ...
2009-05-01
Energy Technology Data Exchange (ETDEWEB)
Absorption and emission measurements at liquid-helium temperature, liquid-nitrogen temperature and room temperature have been performed on tetragonal scheelite-type rare earth sodium double molybdates Na[sub 5]RE(MoO[sub 4])[sub 4] and on RE-doped Na[sub 5]Gd(MoO[sub 4])[sub 4] samples. The rare earth occupies one single crystallographic position with S[sub 4] as point symmetry. The spectra were analysed according to the crystal field theory. From the experimental data, nearly complete energy level schemes of the Pr[sup 3+] and Nd[sup 3+], on the 4f [sup 2] and 4f [sup 3] configurations were derived. Very good correlation was obtained between the experimental and simulated energy level schemes, first for the approximated D[sub 2d] and then for the true S[sub 4] symmetries. The crystal field parameters vary smoothly with the atomic number of the rare earth, when compared with those determined previously for Eu[sup 3+] in the same matrix. ((orig.))
1994-06-01
Neutron diffraction study of quasi-one-dimensional spin-chain compounds Ca3Co2-xFexO6
International Nuclear Information System (INIS)
We report the results of the DC magnetization, neutron powder diffraction and neutron depolarization studies on the spin-chain compounds Ca3Co2-xFexO6 (x = 0, 0.1, 0.2 and 0.4). Rietveld refinement of neutron powder diffraction patterns at room temperature confirms the single-phase formation for all the compounds in rhombohedral structure with space group R3-barc. Rietveld refinement also confirms that Fe was doped at the trigonal prism site, 6a (0, 0, 1/4) of Co. The high temperature magnetic susceptibility obeys the Curie-Weiss law; the value of the paramagnetic Curie temperature (?p) decreases as the concentration of iron increases and it becomes negative for x = 0.4. No extra Bragg peak as well as no observable enhancement in the intensity of the fundamental (nuclear) Bragg peaks has been observed in the neutron diffraction patterns down to 30 K. No depolarization of neutron beam has been observed down to 3 K confirming the absence of ferro- or ...
2008-11-01
International Nuclear Information System (INIS)
This paper describes the development and a detailed analysis carried out on the luminescence characteristics of Pr"3"+ doped ZrF_4-BaF_2-LaF_3-YF_3-AlF_3-NaF glasses. In the present work our objectives are to elucidate the possible mechanisms that are responsible for NIR to red upconversion process and yellow to blue upconversion emission in terms of energy level schemes from the praseodymium containing fibre optical glass composition. We have studied their different physical and optical properties. Besides our investigation on the upconversion emission of these glasses, normal fluorescence studies have also been undertaken in explaining the mechanisms in demonstrating bright red and blue emissions upon excitations at visible and UV wavelengths. Besides these measurements works, a bright blue colour emission was observed under an UV source (202 nm) and upconverted prominent red emissions were observed with a laser diode (LD of 980 nm). Similarly under a yellow ...
2004-04-15
Morphology and luminescence properties of ZnO layers produced by magnetron spattering
International Nuclear Information System (INIS)
We show that the morphology and the luminescence properties of ZnO layers produced by magnetron sputtering can be controlled by technological parameters of sputtering, particularly by the ratio of argon to oxygen gases in the gas flow during the growth process. Smooth and flat layers were produced with a high Ar/O ratio, while porous layers with various morphologies were obtained with a low Ar/O ratio. The layers produced with O/Ar ration equal to 10 exhibit extremely high near-bandgap luminescence intensity even higher in comparison with bulk ZnO single crystals. The free carrier density estimated from the analysis of photoluminescence spectra is also very high in these samples suggesting that these technological conditions promote both optical and electrical activation of the doping Al impurity. The samples grown with high Ar/O ratios exhibit strong visible emission which is controlled by the technological conditions.
2011-07-07
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}
1999-03-01
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
International Nuclear Information System (INIS)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.
1999-03-01
Energy Technology Data Exchange (ETDEWEB)
A thermoluminescence (TL) sheet and its spatial readout system for in vivo measurement of spatial dose distribution around sources has been newly developed for intracavitary high dose-rate radiation therapy. The TL sheet (40 cm x 50 cm x 200 {mu}m), which is composed of teflon mixed with BaSO{sub 4} (Eu doped) powder, has a linear response with a very wide dynamic range from at least 0.002 cGy to 5000 cGy for {sup 60}Co sources. Phantom test of the TL sheet readout system demonstrated that absorbed dose with TL sheet and that with ionization chamber as standard dosimeter agreed well. For clinical application, TL sheet was attached on an applicator of intracavitary radiation therapy for rectal cancer. After irradiation with high dose-rate {sup 60}Co sources, the in vivo dose distribution on the surface of the rectum was determined. The TL sheet was suggested to provide a convenient means of measuring the dose distribution around {sup 60}Co sources in intracavitary ...
1991-06-01
International Nuclear Information System (INIS)
The local environment of Ca dopants in barium titanate, BaTiO_3, is investigated by Ca K-edge X-ray absorption near-edge structure (XANES) spectroscopy. In conjunction with experiments, first-principles calculations by two methods are systematically made. The projector-augmented wave (PAW) method is used to optimize the local structure and obtain the formation energy. The augmented plane wave plus local orbitals method is adopted to obtain theoretical XANES spectra. A comparison between experimental and theoretical XANES spectra shows that Ca dopants are located at the Ba"2"+ sites forming Ca"2"+. Formation energy calculations of Ca doped BaTiO_3 by the PAW method also give the same results. The Ca atom in BaTiO_3 is off-centering in comparison with the Ba site in BaTiO_3. The off-centering of Ca atom is newly revealed by the combination of XANES spectroscopy and first-principles DFT calculations.
2010-06-01
Energy Technology Data Exchange (ETDEWEB)
In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...
2005-08-01
International Nuclear Information System (INIS)
In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD technique over standard ion ...
2005-08-01
British Library Electronic Table of Contents (United Kingdom)
This study examined the oxygen permeation behavior of Ce0.9Gd0.1O2-d (Gadolinium-Doped Ceria, GDC)/Ba0.5Sr0.5Co0.8Fe0.2O3-d (BSCF) composite membranes fabricated using a conventional sintering technique. GDC/BSCF composite membranes with a relative density >95% could be obtained when a green compact of BSCF and GDC was sintered at 1150^oC for 5h. It appears that GDC serves as a grain growth inhibitor because the average grain size of the composite decreased with increasing GDC content. The oxygen permeability of the BSCF and GDC/BSCF composite membranes strongly depends on the grain size and membrane thickness. The addition of GDC to BSCF resulted in a small grain size, low thermal expansion coefficient and high hardness. However, it is believed that oxygen permeation was blocked by GDC, a...
2010-01-01
A modified epitaxial design leads to straightforward implementation of short (1{lambda}) optical cavities and the use of C as the sole {ital p}-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
1995-07-17
Growth and characterisation of electrodeposited ZnO thin films
Energy Technology Data Exchange (ETDEWEB)
The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of the ZnO films was ...
2008-04-30
Energy Technology Data Exchange (ETDEWEB)
The electrode kinetics for oxygen reduction on conducting metal oxides, including lithiated NiO (formed in situ) and Sb-doped SnO/sub 2/, have been investigated. Kinetic measurements were carried out by using ac impedance and coulostatic relaxation methods. The ac behavior on the oxide electrodes was analyzed on the basis of a modified Randles-Ershler type equivalent circuit which takes into account the effect of non-faradaic components due to the semiconducting oxide films. The kinetic parameters (the charge transfer resistance and Warburg coefficient) and the interfacial parameters (the double layer capacity, film capacity and film resistance) were obtained by a least squares curve fitting method under P/sub O2//P/sub CO2/=0.9/0.1 atmosphere. The exchange current density was found to be 10 to 20 mA cm/sup -2/ at the oxide electrodes, assuming n=2. The coulostatic relaxation experiments supported the magnitude of the i/sub o/ values.
1986-01-01
Fully transparent thin-film transistor devices based on SnO2 nanowires.
We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates. PMID:17595151
2007-06-27
Formation of high resistivity regions in [ital p]-type Al[sub 0. 5]In[sub 0. 5]P by ion implantation
Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.
1993-12-06
International Nuclear Information System (INIS)
Nitrogen doped Diamond-like carbon thin films were deposited on n-Si and SiO_2 substrates by rf magnetron sputtering using pure graphite (99.999%) as the target material and mixtures of Ar, N_2 and H_2 for plasma generation. The dependence of structural and optical properties on nitrogen content was investigated using XPS, Raman spectroscopy, FT-IR spectroscopy, and Ellipsometry studies. It was found that as the nitrogen content was increased in the plasma, sp"2 bonding favored. Also it was observed that oxygen contamination increased with nitrogen content. Typical C-H stretching modes connected with diamond-like carbon could be seen in FT-IR spectra. The I_D and I_G bands were well defined and it was observed that as nitrogen content increased I_G band was enhanced. Ellipsometry studies revealed that the optical constants like refractive index (n) and extinction co-efficient (k) increased with increase in nitrogen content as well as substrate temperature. (author)
2003-03-01
Electrical resistivity and thermal expansion coeffcient of carbon-black-filled compounds around T_g
International Nuclear Information System (INIS)
A Michelson interferometer and a CCD detector were used to measure the number of interference fringes related to the expansion length of rubber sample. The sample was situated in a microcryostat, and the temperature of the sample was varied from -200 .deg. C to +80 .deg. C. Various types of carbon black filled rubber (Duradene, Sn-SSBR) samples were used to determine the glass transition temperatures (T_g) and the thermal coeffcients (#alpha#). The mixing ratio was 0, 10, 30, 40, 50, or 70 parts per hundred of carbon black to Sn-SSBR rubber. For the unfilled rubber of Sn-SSBR, the T_g was about -24 .deg. C, and the thermal coeffcient was 1.18 X 10"-"4 .deg. C"-"1. The thermal coeffcients sharply increased around T_g for all samples, and decreased with increasing doping ratio of carbonblack from 0 .deg. C to 30 .deg. C. The volume resistivity was measured for natural rubber and EPDM rubber. They had maximum volume resistivities of 1.5 X 10"6 #OMEGA#m and 8.0 X 10"6 ...
2004-04-01
Effects of interstitial clustering on transient enhanced diffusion of boron in silicon
Energy Technology Data Exchange (ETDEWEB)
A simulation model for boron diffusion which takes into account the aggregation of the excess interstitials in clusters, and subsequently, the dissolution of these defects, is proposed. The interstitial supersaturation and generation rate are determined according to the classical theory of nucleation and growth of particles, in analogy with the precipitation of a new phase in heavily doped silicon. The clusters are considered as precipitates formed by interstitial Si atoms. The B diffusion is modelled on the basis of the dopant-interstitial pair diffusion mechanism. The clusters dissolution during annealing maintains nearly constant, for a long period, the interstitial supersaturation and the related enhancement of the boron diffusion. This gives a good account of the diffusion results over a large range of experimental conditions. Furthermore, this approach describes most of the behavior of the transient enhanced diffusion (TED), like the temperature dependence of ...
1997-11-01
Energy Technology Data Exchange (ETDEWEB)
Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.
2008-02-15
International Nuclear Information System (INIS)
Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.
2008-02-01
Effect of hot air aging on properties of EPDM/SmBO3/EVA and EPDM/ATO/EVA composites
British Library Electronic Table of Contents (United Kingdom)
Abstract Ethylene-propylene-diene rubber (EPDM)/samarium borate (SmBO3)/ethylene-vinyl acetate (EVA) copolymer and EPDM/antimony-doped tin oxide (ATO)/EVA composites are aged at 150C for different intervals. Surface modification is used to improve filler to matrix interphase. The main aim is to investigate the effect of filler type and vinyl acetate (VA) content in EVA on stability of EPDM composites. It is found that acidic ATO particles can lower pH level of EPDM composites and then promote the degradation of acetic acid during aging. Moreover, when VA content exceeds 14 wt %, the instable VA content causes more acetic acids escape during aging. With the increasing of aging time, EPDM/SmBO3 control and EPDM/SmBO3/EVA composites tend to become darker while EPDM/ATO and EPDM/ATO/EVA compos...
2011-01-01
Effect of Sr substitution on photoluminescent properties of BaAl2O4:Eu2+, Dy3+
British Library Electronic Table of Contents (United Kingdom)
Phosphor material BaAl2O4:Eu2+, Dy3+ with varying compositions of Sr substitution were prepared by the solid-state synthesis method. The phosphor compositions were characterized for their phase and crystallinity by XRD, SEM and TEM. Photoluminescence (PL) properties were investigated measuring PL and decay time for varying Ba/Sr compositions. The PL results show the blue shift in the luminescence properties in Sr substituted BaAl2O4:Eu2+, Dy3+ compared to parent BaAl2O4:Eu2+, Dy3+. It is probably due to the influence of 5d electron states of Eu2+ in the crystal field because of atomic size variation causing crystal defects. Dy3+ ion doping in the phosphor generates deep traps, which results in long afterglow phosphorescence.
2008-01-01
Effect of Ho^3^+ substitutions on the structural and magnetic properties of BaFe12O19 hexaferrites
British Library Electronic Table of Contents (United Kingdom)
Holmium doped barium based hexaferrites BaFe12-2xHo2xO19 with (x=0.0-1.0) were synthesized by solid state reaction method. Structural and magnetic characterization of these ferrites provide significant information about their reactive physical properties. X-ray analysis reveals that in all samples M-type structure exist with few secondary phases. Scanning electron microscope revealed the grain size of the specimen. The results show that grain size decreases with the substitution degree of Holmium. Thus rare earth element Holmium Ho^3^+ acts as a grain growth inhibitor. The magnetic hysteresis loops show the variation in the values of magnetic parameters like saturation magnetization (Ms), remanent magnetization (Mr) and coercivity (Hc) were observed by changing Ho^3^+ content in BaFe12-2xH...
2010-01-01
International Nuclear Information System (INIS)
Holmium doped barium based hexaferrites BaFe_1_2_-_2_xHo_2_xO_1_9 with (x = 0.0-1.0) were synthesized by solid state reaction method. Structural and magnetic characterization of these ferrites provide significant information about their reactive physical properties. X-ray analysis reveals that in all samples M-type structure exist with few secondary phases. Scanning electron microscope revealed the grain size of the specimen. The results show that grain size decreases with the substitution degree of Holmium. Thus rare earth element Holmium Ho"3"+ acts as a grain growth inhibitor. The magnetic hysteresis loops show the variation in the values of magnetic parameters like saturation magnetization (M_s), remanent magnetization (M_r) and coercivity (H_c) were observed by changing Ho"3"+ content in BaFe_1_2_-_2_xHo_2_xO_1_9 ferrites. Coercivity showed a maximum value of 2230 Oe for (x = 0.4) and then decreasing trend were observed in the values of H_c, M_r and M_s with ...
2010-04-09
EPR, optical, infrared and Raman studies of VO"2"+ ions in polyvinylalcohol films
International Nuclear Information System (INIS)
Electron paramagnetic resonance (EPR), optical, infrared and Raman spectral studies have been carried out on vanadyl ions doped in polyvinylalcohol (PVA) films. The spin-Hamiltonian parameters (g and A) and the molecular orbital coefficients (#beta#_2"*"2 and k) have been evaluated. The values of spin-Hamiltonian parameters confirm that the vanadyl ions are present in PVA films as VO"2"+ molecular ions in an octahedral site with a tetragonal compression (C_4_v). The temperature variation EPR studies reveal that the variation of number of spins with temperature is in accordance with Boltzmann law. It is interesting to observe that the variation of susceptibility with temperature obeys Curie-Weiss law. The FT-IR and FT-Raman spectrum exhibits few bands, which are attributed to O-H, C-H, C-C and C-O groups of stretching and bending vibrations. The optical absorption spectrum exhibits two bands, which are assigned to "2B_2_g->"2B_1_g and "2B_2_g->"2E_g ...
2007-01-15
EPR and FT-IR spectroscopic studies of Bi2O3-B2O3-CuO glasses
International Nuclear Information System (INIS)
EPR and FT-IR absorption measurements have been performed for xCuO.(100-x)[2Bi2O3.B2O3] glass system, with 0?x?50 mol%. The mode in which the addition of the copper ions influences the structure of 2Bi2O3.B2O3 glass matrix was analyzed. The EPR absorption spectra revealed the presence in the glass structure of Cu2+ ions in axially distorted octahedral environments. EPR data pointed out the simultaneous presence of Cu2+ and Cu+ ionic species in the glasses with x?5 mol%. For x>10 mol%, the Cu2+ ions participate in the superexchange magnetic interactions, which increase with CuO content. The FT-IR spectra showed the presence of some bands that are assigned to vibrations of Bi-O bonds from BiO3 pyramidal and BiO6 octahedral units and B-O bonds from BO3 and BO4 units. The data obtained by these measurements reveal the structural changes in the 2Bi2O3.B2O3 glass matrix by controlled doping of CuO.
2008-10-01
Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
Energy Technology Data Exchange (ETDEWEB)
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.
2004-02-01
Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
International Nuclear Information System (INIS)
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.
2004-02-01
International Nuclear Information System (INIS)
Research was conducted at Pacific Northwest Laboratory to develop high photosensitivity adaptive optical elements utilizing ion implanted lanthanum-doped lead-zirconate-titanate (PLZT). One centimeter square samples were prepared by implanting ferroelectric and anti-ferroelectric PLZT with a variety of species or combinations of species. These included Ne, O, Ni, Ne/Cr, Ne/Al, Ne/Ni, Ne/O, and Ni/O, at a variety of energies and fluences. An indium-tin oxide (ITO) electrode coating was designed to give a balance of high conductivity and optical transmission at near uv to near ir wavelengths. Samples were characterized for photosensitivity; implanted layer thickness, index of refraction, and density; electrode (ITO) conductivity; and in some cases, residual stress curvature. Thin film anti-ferroelectric PLZT was deposited in a preliminary experiment. The structure was amorphous with x-ray diffraction showing the beginnings of a structure at substrate temperatures of ...
Energy Technology Data Exchange (ETDEWEB)
A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other unusual topographical ...
2006-07-30
Crystal-field excitations in the visible spectrum of Nd{sub 2}CuO{sub 4}
Energy Technology Data Exchange (ETDEWEB)
A phenomenological simulation was carried out for 41 experimental crystal-field (CF) levels within the {sup 4}I{sub 9/2-15/2}, {sup 4}F{sub 3/2-9/2}, {sup 4}S{sub 3/2} and {sup 2}H{sub 9/2} J manifolds, including the available infrared (IR) data up to {approx}15 000 cm{sup -1} for the Nd{sup 3+} ions in the Nd{sub 2}CuO{sub 4} single crystals. The CF Hamiltonian for the tetragonal C{sub 4v} symmetry was diagonalized together with the free-ion Hamiltonian in a basis that spans the entire 4f{sup 3} configuration. A rms error of 9 cm{sup -1} between the calculated and experimental energy level schemes was obtained. A comparison of the spectra in the visible region between the insulating Nd{sub 2}CuO{sub 4} and the metallic Nd{sub 2-x}Ce{sub x}CuO{sub 4}, allowed identifying the absorption bands associated with the development of the charge-doping induced local structural distortions in the superconducting regime.
2004-07-14
Crystal-field excitations in the visible spectrum of Nd_2CuO_4
International Nuclear Information System (INIS)
A phenomenological simulation was carried out for 41 experimental crystal-field (CF) levels within the "4I_9_/_2_-_1_5_/_2, "4F_3_/_2_-_9_/_2, "4S_3_/_2 and "2H_9_/_2 J manifolds, including the available infrared (IR) data up to #approx#15 000 cm"-"1 for the Nd"3"+ ions in the Nd_2CuO_4 single crystals. The CF Hamiltonian for the tetragonal C_4_v symmetry was diagonalized together with the free-ion Hamiltonian in a basis that spans the entire 4f"3 configuration. A rms error of 9 cm"-"1 between the calculated and experimental energy level schemes was obtained. A comparison of the spectra in the visible region between the insulating Nd_2CuO_4 and the metallic Nd_2_-_xCe_xCuO_4, allowed identifying the absorption bands associated with the development of the charge-doping induced local structural distortions in the superconducting regime.
2004-07-14
Crystal structure of ball-milled mixture of sodium chloride and magnesium chloride-ethanol adduct
International Nuclear Information System (INIS)
NaCl doped MgCl_2.nEtOH adducts were prepared by ball-milling MgCl_2.2.5EtOH with NaCl. Both the ball-milled MgCl_2.nEtOH/NaCl mixture and pure MgCl_2.2.5EtOH adducts were analyzed by X-ray diffraction (XRD), transmission electron microscope (TEM), thermogravimetry (TG) and differencial scanning calorimetry (DSC). A simple MgCl_2.nEtOH/NaCl mixture without ball-milling treatment was also studied for comparison. Two kinds of mixed crystals, Na_2MgCl_4 and NaMgCl_3, were found to be formed in a ball-milled mixture that contained 16 mol.% NaCl. TG and DSC analysis of the samples also provided indirect evidences supporting the presence of the mixed crystals in the ball-milled mixture. Adding certain amounts of NaCl in MgCl_2.2.5EtOH adduct, either by co-milling or by simple mixing, greatly increased the thermal stability of the adduct, but thermal decomposition behaviour of the ball-milled mixture was still different from that of a simple mixture.
2008-02-05
Crystal field and EPR studies of Nd{sup 3+}:YMO{sub 4}(M=V,AS,P)
Energy Technology Data Exchange (ETDEWEB)
Crystal field calculation and electron paramagnetic resonance (EPR) have been performed on zircon-type materials Nd:YMO{sub 4} (M=V, As, P). Simulation of the energy level schemes has been carried out and the wave functions composition and g tensor principal values associated to the first sub-level of the {sup 4}I{sub 9/2} manifold were calculated. A rather good correlation is obtained between crystal field calculations and the EPR measurements. Furthermore, some extra lines observed by optical spectroscopy (absorption and emission) also appear on the EPR spectra and a correlation between the two spectroscopies indicates that Nd{sup 3+}-Nd{sup 3+} exchange and dipolar interactions occur in the zircon family, even at very low doping content (less than 8 x 10{sup 19} Nd{sup 3+} ions cm{sup -3}). Nd{sup 3+}-Nd{sup 3+} pairs at distances 3.9, 5.9 and 6.3 A have been identified. (orig.) 13 refs.
1998-07-24
Crystal field and EPR studies of Nd"3"+:YMO_4(M=V,AS,P)
International Nuclear Information System (INIS)
Crystal field calculation and electron paramagnetic resonance (EPR) have been performed on zircon-type materials Nd:YMO_4 (M=V, As, P). Simulation of the energy level schemes has been carried out and the wave functions composition and g tensor principal values associated to the first sub-level of the "4I_9_/_2 manifold were calculated. A rather good correlation is obtained between crystal field calculations and the EPR measurements. Furthermore, some extra lines observed by optical spectroscopy (absorption and emission) also appear on the EPR spectra and a correlation between the two spectroscopies indicates that Nd"3"+-Nd"3"+ exchange and dipolar interactions occur in the zircon family, even at very low doping content (less than 8 x 10"1"9 Nd"3"+ ions cm"-"3). Nd"3"+-Nd"3"+ pairs at distances 3.9, 5.9 and 6.3 A have been identified. (orig.)
1998-07-24
Controlled grain boundary structures in superconductors. Final report 1 Jan 77-31 Dec 81
Energy Technology Data Exchange (ETDEWEB)
Theoretical work supported by this grant has lead to the concept of the specific pinning force Q and the development of new methods to sum elementary interaction forces to find Q. Pinning due to changes in transition temperature or thermodynamic critical field in thin layers (e.g., a grain boundary), is greatly reduced due to the proximity effect and the stress field interaction due to the dislocations in the grain boundary has been shown to be negligible. The crystalline anisotropy (CA) and electron scattering (ES) interactions have been computed for the first time for an arbitrary boundary. Experiments on niobium bicrystals, polycrystalline niobium thin foils doped with oxygen, lead-bismuth alloy thin films and lead-bismuth alloy films in which either lead or thallium has been allowed to diffuse down the grain boundaries and out into the grains provide evidence that confirms the predictions of the theory. These results suggest that further improvements in grain ...
1982-03-01
Compressed-shell integrity measurements in spherical implosion experiments
International Nuclear Information System (INIS)
The shell integrity near peak compression of spherical implosions using the 60-beam, 30-kJ UV OMEGA laser system [Opt. Commun. 133, 495 (1997)] has been measured. Hot core emission backlights a shell with a thin titanium-doped layer that is imaged at x-ray photon energies above and below the titanium K edge. The x-ray intensity ratio between the two images is related to perturbations in the cold, or absorbing, part of the shell. The measured cold-shell areal-density modulations, integrated over the time of peak compression, are of the order of 25% to 50% with nonuniformity spectra peaked at spatial wavelengths of 30 to 50 #mu#m and with the smallest detectable nonuniformity features extending down to spatial wavelengths of 12 to 15 #mu#m. Hot-shell areal-density modulations of the emitting part of the shell (inner edge) are of the order of 13% to 20%. The measured shell modulations are in agreement with the results of two-dimensional simulations that include ...
2001-06-01
Complex permittivity and complex permeability of Sr ions substituted Ba ferrite at X-band
International Nuclear Information System (INIS)
M-type hexagonal ferrite composition, Ba(1-x)SrxFe12O19 (x=0.0, 0.2, 0.4, 0.6, 0.8 and 1.0), was prepared by a two route ceramic method. Complex permittivity (?'-j?'') and complex permeability (?'-j?'') have been measured using a network analyzer from 8.2 to 12.4 GHz X-ray diffraction confirmed the M-type hexagonal structure and a scanned electron micrograph was used to analyze the grain size distribution of ferrite. Substitution of Sr2+ ions causes an increase in porosity that deteriorates the electromagnetic and microstructural properties in the doped samples. Both dielectric constant and dielectric loss are enhanced in comparison to the permeability and magnetic loss over the entire frequency region. This is due to a resistivity variation and the formation of Fe2+ ions, which increases the hopping mechanism between Fe2+ and Fe3+ ions.
2008-05-01
International Nuclear Information System (INIS)
In this study, perovskite type oxide YAlO_3 has been doped with different amounts of the divalent cation Ca to synthesize Y_1_-_xCa_xAlO_3_-_#delta# (x = 0-0.21) compositions. The effect of dopant concentration on the crystal structure and electrical properties of YAlO_3 synthesized by citrate gel route has been investigated. The phase purity of the samples has been carried out using X-ray diffraction. The microstructural evaluation of the samples has been conducted by scanning electron microscopy and energy dispersive spectrum analysis. Thermal analysis has been conducted to monitor the decomposition of the intermediate products. The electrical conductivity studies have been performed using a.c. impedance spectroscopy as a function of temperature in the range 200-800 "oC in air. The Y_0_._9_4Ca_0_._0_6AlO_3_-_#delta# composition exhibits a total conductivity of 2.5 mS/cm at 800 "oC.
2010-04-30
Characterization of nanosized Tb-MCM-41 synthesized by the sol-gel-assisted self-assembly method
International Nuclear Information System (INIS)
The nanosized luminescent Tb-MCM-41 (1:10) is synthesized by means of sol-gel-assisted self-assembly under basic conditions at room temperature. The results of "2"9Si-MAS NMR and XRD prove that Tb"3"+ doped Si-O framework. The HRTEM image shows that the regular uniform particles with a diameter of 10 nm possess ultralarge pore with diameter 2.0 nm, which is consistent with the result of N_2 adsorption. The BET surface area and porosity of Tb-MCM-41 (1:10) are 1127 m"2/g and 0.84 cm"3/g, respectively. The patterns of selected-area electron diffraction and XRD of Tb-MCM-41 (1:10) show an Fm3m space group in the cubic. FT-IR results show that the peaks near 970 cm"-"1 are assigned to the deformation vibration of silanol group. The as-products are calcined at 800 deg. C and the mesoporous materials possess enormous specific areas and large porosity, it shows that the mesoporous materials are ultrastable.
2003-10-06
Energy Technology Data Exchange (ETDEWEB)
The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N {sub D}) for the passive film is of the order of 10{sup 21} cm{sup -3} and decreases with increasing formation time and potential, indicating that defects decrease with increasing film thickness. Based on the information about the physical phenomena, an ...
2005-12-15
International Nuclear Information System (INIS)
The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N _D) for the passive film is of the order of 10"2"1 cm"-"3 and decreases with increasing formation time and potential, indicating that defects decrease with increasing film thickness. Based on the information about the physical phenomena, an equivalent ...
2005-12-15
Capacitance behaviour of passive films on ferritic and austenitic stainless steel
Energy Technology Data Exchange (ETDEWEB)
The electrochemical behaviour of passive films formed on one austenitic stainless steel (AISI 304) and one ferritic stainless steel (AISI 446) in solutions with pH between 0.6 and 8.4 was studied by capacitance measurements and photocurrent spectroscopy. Compositional characterization of the passive films was done by X-ray photoelectron spectroscopy. The capacitance increases with decreasing pH. Doping densities evaluated from Mott-Schottky plots are in the range 2-6 x 10{sup 20} cm{sup -3} and increased with the pH in the neutral/alkaline range while in pH 0.6, values above 10{sup 21} cm{sup -3} were found. The bandgap energy indicates two transitions, at 2.5-2.8 and 3.2 eV. The analytical data reveal that, as the pH increased, the films become enriched in Fe(II) and Fe(III), whereas the Cr(III) gradually decreases. The films formed at very low pH had a behaviour that contrasts with that of the films formed in the neutral/alkaline media. The films are described by ...
2005-03-01
Capacitance behaviour of passive films on ferritic and austenitic stainless steel
International Nuclear Information System (INIS)
The electrochemical behaviour of passive films formed on one austenitic stainless steel (AISI 304) and one ferritic stainless steel (AISI 446) in solutions with pH between 0.6 and 8.4 was studied by capacitance measurements and photocurrent spectroscopy. Compositional characterization of the passive films was done by X-ray photoelectron spectroscopy. The capacitance increases with decreasing pH. Doping densities evaluated from Mott-Schottky plots are in the range 2-6 x 10"2"0 cm"-"3 and increased with the pH in the neutral/alkaline range while in pH 0.6, values above 10"2"1 cm"-"3 were found. The bandgap energy indicates two transitions, at 2.5-2.8 and 3.2 eV. The analytical data reveal that, as the pH increased, the films become enriched in Fe(II) and Fe(III), whereas the Cr(III) gradually decreases. The films formed at very low pH had a behaviour that contrasts with that of the films formed in the neutral/alkaline media. The films are described by a bilayer ...
2005-03-01
Biomimetic metal-sorbing vesicles for continuous extraction of heavy metal ions from dilute solution
Energy Technology Data Exchange (ETDEWEB)
Biomimetic vesicle media which can selectivity extract and concentrate heavy metals (e.g., Pb{sup 2+}) from dilute solutions of 5 ppm and less have been prepared. At a concentration of only 1% 2/v, these non-covalently assembled, unilamellar, surfactant vesicles provide approximately 1,000m{sup 2} of exposed membrane surface area per liter of suspension which gives rise to very rapid rates of metal ion extraction. To facilitate the selective transport of heavy metal ions through the ion impermeable vesicle wall, the vesicles are doped with lipophilic ionophores, both natural and synthetic. In addition, the metal chelating agent, nitrolotriacetate, is encapsulated in the aqueous vesicle core to provide the driving force for metal ion uptake and concentration. Concentration factors in excess of 1000 fold have been observed. Metal-sorbing surfactant vesicles measuring approximately 100 nm in diameter are stable and have been tested in a bench-scale metal ion ...
1993-12-31
International Nuclear Information System (INIS)
The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)
A novel photodiode made of hybrid organic/inorganic nanocomposite
International Nuclear Information System (INIS)
Novel hybrid organic/inorganic nanocomposites made of metal oxide and conjugated polymer nanocomposite and its application in bulk-heterojunction solar cells were studied. The composite was composed of different concentrations of strontium titanate (SrTiO_3) and polyaniline doped phosphoric acid. The optimum concentration of strontium titanate was found to be 0.2 v/v. An inorganic-organic photovoltaic device with a structure of Ag/Pani-H_3PO_4-SrTiO_3/Al has been fabricated. The ideality factor value of the diode was found to be 1.8. This n value of the diode implies a deviation from ideal junction behaviour. The barrier height #phi#_b value for the diode was found to be 0.56 eV. The Ag/Pani-H_3PO_4-SrTiO_3/Al diode shows a photovoltaic behaviour with a maximum open-circuit voltage V_o_c of 2.49 V, and short-circuit current I_s_c of 5.6 mA under light illumination #lambda# = 460 nm. The conversion efficiency was found to be 5.2%. It is evaluated that the ...
2009-08-07
British Library Electronic Table of Contents (United Kingdom)
Monodisperse europium-activated titania hollow phosphors had been synthesized by a facile one-pot hydrothermal method using carbon spheres as hard templates. Samples were characterized by X-ray powder diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, energy dispersive spectrometer and photoluminescence spectrum. The strongest emission intensity was observed with TiO2:Eu0.2 hollow spheres and TiO2:Eu0.2 hollow spheres calcining at 550^oC. Moreover, the strongest excitation of TiO2:Eu0.2 hollow spheres transferred from 400 to 500^oC and the effective nonradiative energy transfer from the TiO2 hollow spheres host matrix to Eu^3^+ ions crystal field states was realized due to changes of crystalline field in the environment around Eu^3^+ ions occupying Ti^4^+ site...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
The main driver in ultra-shallow formation for the 65 nm technology node and beyond is to find solutions that both reduce boron transient enhanced diffusion and can be integrated in the CMOS process flow. To this end, many studies have recently focused on using co-doping techniques with fluorine and most recently with carbon. In most cases, one or both of these is co-implanted with a dopant specie in pre-amorphized silicon. In this work, we show a comparative study of fluorine or carbon co-implanted with low-energy boron to form source and drain extension junctions for PMOS devices. We will show that by a systematic optimization of germanium, boron, fluorine or carbon energies and doses, spike annealing technology can be extended to the 65 nm node. These results will be used to discuss how the different formed junctions offer potential solutions for either low-power or high-performance PMOS device fabrication.
2005-12-05
0--30 keV low-energy focused ion beam system
Energy Technology Data Exchange (ETDEWEB)
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
1988-05-01
0--30 keV low-energy focused ion beam system
International Nuclear Information System (INIS)
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
Radiation damage measurements in room temperature semiconductor radiation detectors
Energy Technology Data Exchange (ETDEWEB)
The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 {times} 10{sup 10} {alpha}/cm{sup 2} produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 {times} 10{sup 9} ...
1998-12-01
International Nuclear Information System (INIS)
Full text: Pigments possessing the ability to confer high solar reflectance have received considerable attention in recent years. The inorganic class of NIR reflective pigments are mainly metal oxides and are primarily employed in two applications: (i) visual camouflage and (ii) reducing heat build up. More than half of the solar radiation consists of near-infrared radiation (52%), the remaining being 43% visible light and 5% ultraviolet radiation. Over heating due to solar radiation negatively affects comfort in the built environment and contributes substantially to electrical consumption for air conditioning and release of green house gases. A pigment which has strong reflections in the NIR region (780-2500 nm) can be referred to as a 'cool' pigment. However, most of the NIR reflective inorganic pigments particularly yellow (eg. cadmium yellow, lead chromate, chrome titanate yellow etc.) contain toxic metals and hence their consumption is being limited. Replacing them with ...
2010-11-24
[Magnetic thin film research]: Progress report year 2
Energy Technology Data Exchange (ETDEWEB)
The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal alloys: perpendicular magnetic anisotropy, magneto-optic activity, and a {Tc} (for ...
1996-09-01
Energy Technology Data Exchange (ETDEWEB)
There is presently considerable interest in wear resistant coatings produced using closed field unbalanced magnetron sputtering technology. For example, layered films of diamond-like carbon (DLC) with tungsten or titanium additions have been widely reported. The benefit is that the mechanical properties are enhanced (e.g. giving greater toughness); also it is possible to control the stress state and enhance adhesion. Here we report the further development of this concept by the addition of TiN, TiCN and TiC layers in DLC-based composites, utilizing an additional source of electrons in the vicinity of substrate to enhance ionisation of the plasma and increase coating density. Composite coatings of ceramics TiN, TiC{sub x}N{sub y}, TiC, CrN, TiCrN, TiCrCN, TiCrC, metal doped Ti{sub x%}-DLC and their combinations were deposited on 316 stainless steel substrates. The mass flow of reactive gases into the chamber was controlled using plasma optical emission monitoring to ...
1995-08-01
Transient enhanced diffusion from decaborane molecular ion implantation
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials ...
1998-10-01
Transient enhanced diffusion from decaborane molecular ion implantation
International Nuclear Information System (INIS)
Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become ...
1998-10-01
International Nuclear Information System (INIS)
Transparent aluminum doped zinc oxide (ZnO:Al, AZO) conducting thin films with a high-preferential c-axis orientation were synthesized using a new sol-gel formula. The films were deposited using a spin-coating route onto borosilicate glass substrates. We used propylene glycol methyl ether (PGME) as the solvent in place of ethylene glycol monomethyl ether (EGME), which is commonly used because it is easier to deposit onto the substrates. PGME is also superior in terms of health and safety. PGME solvent does not need to settle for several days before use and can be spin-coated as soon as the raw material and solvent are mixed. The effects of this novel solvent on the structural, morphological, electrical and optical properties are discussed using XRD, SEM, a four-point probe and UV-VIS spectrophotometry. It was found that the films produced with PGME showed a high-preferential c-axis orientation and compact microstructure in comparison films produced using EGME. The ...
2010-09-01
Suspension and solution plasma spraying of finely structured layers: potential application to SOFCs
International Nuclear Information System (INIS)
Suspension direct current plasma spraying allows achieving finely structured coatings whose thickness is between few tens and few hundreds of micrometres. Drops (200-300 ?m in diameter) or liquid jets are mechanically injected in the plasma jet. With radial injection they are rapidly (a few ?s) fragmented into droplets (a few ?m in diameter). The latter are vaporized (in a few ?s) and the solid particles contained in suspension droplets are accelerated and melted by the plasma jet. As in conventional plasma spraying (CPS), much smaller splats (with diameters between 0.2 and 3 ?m and thicknesses between 30 and 200 nm) are arranged in layers up to form the coating. The low inertia of particles requires spray distances between 40 and 60 mm which induces plasma heat fluxes up to 22 MW m-2 participating in coating densification. Even more than in CPS, the plasma jet fluctuations, particularly for plasmas containing di-atomic gases, perturb drops penetration and fragmentation. It has been ...
2007-04-21
Study on grain growth of fine grained WC-Co hardmetal by numerical calculation
Energy Technology Data Exchange (ETDEWEB)
This paper reviews our simulation study by numerical calculation based on two-, three- and multi-grain-size models on WC grain growth in fine grained WC-Co hardmetal doped with VC. The study aimed to presume or predict the following: (1) the cause and conditions for the abnormal grain growth which occurs in some cases in the fine grained hardmetal prepared from fine WC powders with mean grain size below about 0.2{mu}m, and (2) how the mean grain size of the hardmetal varies with decreasing mean grain size of the WC starting powder to 0.1 pm or nano-meter size. The calculation results by these three kinds of models suggested the following, respectively: (1) the occurrence of the abnormal grain growth is generally substantial for WC starting powder with bimodal size-distribution and mean gram size below 0.1 - 0.2{mu}m, and not due to the non-uniform distribution of the grain growth inhibitor, (2) the introduction of middle grains caused the disappearance of small ...
2000-12-15
Energy Technology Data Exchange (ETDEWEB)
Positron annihilation experiments on Fe-Cu model dilute alloys of nuclear reactor pressure vessel (RPV) steels have been performed after neutron irradiation in JMTR. Nanovoids whose inner surfaces were covered by Cu atoms were clearly observed. The nanovoids transformed to ultrafine Cu precipitates by dissociating their vacancies after annealing at around 400degC. The nanovoids and the ultrafine Cu precipitates are strongly suggested to be responsible for irradiation-induced embrittlement of RPV steels. Effects of Ni, Mn and P addition on the nanovoid and Cu precipitate formations were also studied. The nanovoid formation was enhanced by Ni and P, but suppressed by Mn. The Cu precipitates after annealing around 400degC were almost free from these doping elements and hence were pure Cu in the chemical composition. Furthermore the Fermi surface of the 'embedded' Cu precipitates with a body centered cubic crystal structure was obtained from two ...
2003-03-01
Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and compensated a-Si:H is ...
1981-08-01
Slide rings made of an SiC/silicide composite; Gleitringe aus einem SiC/Silicid-Verbundwerkstoff
Energy Technology Data Exchange (ETDEWEB)
The objective of the project was to develop an infiltration material based on SiC that should have improved corrosion resistance and should permit higher operating temperatures. From a variety of tested doping agents, zirconium silicide and molybdenum proved to be the most appropriate agents. The respective infiltration materials permit a combination of advantages of the SSiC with those of the SiSiC. Silicide SiC, analogous to the SiSiC, is almost nonshrinking, and above all is more corrosion-resistant than SiSiC in the alkaline regime, due to the replacement of free silicon by silicide phases. The operating temperature of the molybdenum-base variant is 1600 C. (orig./CB) [Deutsch] Ziel des Vorhabens war die Entwicklung eines Infiltrationswerkstoffes auf SiC-Basis mit verbesserter Korrosionsbestaendigkeit und hoeherer Einsatztemperatur. Aus einer Vielzahl von getesteten Dotierungsmoeglichkeiten kristallisierten sich Zirkondisilicid und Molybdaen als geeingete ...
1997-12-31
Si and Si/P implants in In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P
Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in InAlP is attributed to the DX level found in the Al-containing material. The reduction in sheet resistance ...
1996-06-01
Shallow Si/Pd-based ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P
Energy Technology Data Exchange (ETDEWEB)
Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of {approximately} 6 {times} 10{sup {minus}6} {Omega}-cm{sup 2} and {approximately} 1 {times} 10{sup {minus}5} {Omega}-cm{sup 2} have been obtained on Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P respectively (both doped to {approximately} 2 {times} 10{sup 18} cm{sup {minus}3}). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al{sub 0.5}In{sub 0.5}P and n-Ga{sub 0.5}In{sub 0.5}P are presented.
1996-12-31
Energy Technology Data Exchange (ETDEWEB)
Many thermoluminescent materials has been developed and used for photon personal dosimetry but no one has all desired characteristics alone. These characteristics include robustness, high sensitivity, energy photon independence, large range of photon energy detection, good reproducibility, small fading and simple glow curve with peaks above 150 deg C. Calcium Sulfate Dysprosium doped (CaSO{sub 4}:Dy) phosphor Thermoluminescent Dosimeter (TLD) has been used by many laboratories, mainly in Brazil and India. Another interesting phosphor is Calcium Fluoride (CaF{sub 2}). These phosphor advantages begin to be more required and its disadvantages have became more apparent, in a global market more and more competitive. These phosphors are used in environmental and area monitoring, once they present more sensibility than other phosphors, like LiF:Mg. Theirs mainly disadvantage is a strong energetic dependence response, which must be corrected for theirs application in the ...
2006-07-01
Research progress in high voltage spinel LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} material
Energy Technology Data Exchange (ETDEWEB)
Lithium-ion batteries are now considered to be the technology of choice for future hybrid electric and full electric vehicles to address global warming. LiCoO{sub 2} has been the most widely used cathode material in commercial lithium-ion batteries. Since LiCoO{sub 2} has economic and environmental issues, intensive research has been directed towards the development of alternative low cost, environmentally friendly cathode materials as possible replacement of LiCoO{sub 2}. Among them, spinel LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} material is one of the promising and attractive cathode materials for next generation lithium-ion batteries because of its high voltage (4.7 V), acceptable stability, and good cycling performance. Research advances in high voltage spinel LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} are reviewed in this paper. Developments in synthesis, structural characterization, effect of doping, and effect of coating are presented. In addition to conventional synthesis ...
2010-09-01
Research progress in high voltage spinel LiNi0.5Mn1.5O4 material
International Nuclear Information System (INIS)
Lithium-ion batteries are now considered to be the technology of choice for future hybrid electric and full electric vehicles to address global warming. LiCoO2 has been the most widely used cathode material in commercial lithium-ion batteries. Since LiCoO2 has economic and environmental issues, intensive research has been directed towards the development of alternative low cost, environmentally friendly cathode materials as possible replacement of LiCoO2. Among them, spinel LiNi0.5Mn1.5O4 material is one of the promising and attractive cathode materials for next generation lithium-ion batteries because of its high voltage (4.7 V), acceptable stability, and good cycling performance. Research advances in high voltage spinel LiNi0.5Mn1.5O4 are reviewed in this paper. Developments in synthesis, structural characterization, effect of doping, and effect of coating are presented. In addition to conventional synthesis methods, several alternative synthesis methods are also ...
2010-09-01
Energy Technology Data Exchange (ETDEWEB)
Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several hours at 77K for the a-Si-H systems containing N in a range from ...
1994-12-01
Regulation of electricity prices?
International Nuclear Information System (INIS)
In this paper author deals with the regulation of electricity prices in the Slovak Republic. Author contests the social policy of the government through doped prices of electricity. Two thirds of electricity is generated in nuclear power plants in Slovakia. Hence, it is necessary to focus on the solution of problem of nuclear waste. In 2004 Ministry of Economy stated, that the deficit in nuclear fund, from which the country have to fully cover the costs of liquidation and final disposal of nuclear waste, is estimated in the amount of around 89 billion Slovak crowns (? 3.7 billion $). From it, so called historical deficit, which originated because of late foundation of fund, represents officially 15 billion Slovak crowns (? 0.62 billion $). In Slovakia exists the real risk, that by maintenance of present state by creation and draw of the fund, it will be possible to ensure only 39 per cent of financial sources necessary for full financial handling of the back part ...
2006-12-21
Energy Technology Data Exchange (ETDEWEB)
The thesis explains the development of a mass spectrometerical isotope dilution analysis (MS/DA) for determining trace amounts of Tc. The Tc-97 isotope has been prepared by in-core irradiation of Ru of natural isotopic composition, and used as the indicator isotope. For separation of Tc-97 from the Ru matrix, a method has been developed to quantitatively separate Tc-97 from a high Ru surplus. For determining the isotope ratio for the MS/DA, a mass spectrometrical measuring technique has been found which allows reproducible measurement of the Tc-99/Tc-97 isotope ratio. Positive and, for the first time, also negative thermoionisation has been used as a method of selective ionisation of Tc. The applicability of the MS/DA for Tc trace analysis has been verified using two Al foils doped with Tc-99 or Mo-98, respectively. These have been irradiated in a nuclear reactor, the irradiation of Tc-99 yielding Ru-100, and irradiation of Mo-98 Tc-99. The determination of the ...
1984-01-01
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {l_brace}311{r_brace} defects during ...
1997-05-01
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
International Nuclear Information System (INIS)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left brace#311#right brace# defects during Ostwald ...
PbZrO sub 3 -doped (Ba,Sr)TiO sub 3 -based dielectrics for high-voltage capacitor applications
Energy Technology Data Exchange (ETDEWEB)
This paper reports that high-dielectric ceramics with the composition (94.7% {minus} x) (Ba,Sr)TiO{sub 3} + PbZrO{sub 3} + 5Bi{sub 2}Ti{sub 3}O{sub 9} + 0.3MnO{sub 2}, where the ration (Ba)/(Sr) = 1.25 and x {le} 15 mol%, have been developed for high-voltage capacitors. The dielectric constant of the ceramics is in the range 1200 to 1900 at room temperature, and the room-temperature dielectric loss, tan{delta}, is less than 0.3%, except when 15 mol% PbZrO{sub 3} is added with sintering at 1180{degrees}C to 1240{degrees}C for 2 h. Ceramics with more than 8 mol% zirconate show the Y5S characteristic of capacitance, and those with less than 8 mol% additive exhibit the Z5S characteristic. The dielectric constant gradually increases with increment in the ac signal voltage at 60 Hz, but decreases beyond a threshold value that varies with zirconate content and sintering conditions. The variation of the dielectric constant at 2 kVrms/mm (with respect to 0.25 kVrms/mm) is {plus minus} less than ...
1991-11-01
Energy Technology Data Exchange (ETDEWEB)
Formaldehyde, a well-identified indoor pollutant, was recently classified as carcinogenic. New regulations for the air quality are expected and therefore there is a need for low-cost sensors, sensitive and selective with a fast response time for the detection of formaldehyde at ppb level. In the present work, we had developed a chemical sensor based on nano-porous matrices doped with Fluoral-P and optical methods of detection. The nano-porous matrices, elaborated via the Sol-Gel process, display nano-pores whose cavity is tailored for the trapping of the targeted pollutant. They provide a first selectivity with the discrimination of the pollutants by their size. A second selectivity is obtained with a molecular probe, Fluoral-P, which reacts specifically with formaldehyde leading to the 3,5- di-acetyl-1,4-dihydro-lutidine (DDL). The kinetics of formation of DDL was studied as function of many parameters such as the concentration of Fluoral-P in the matrix, the ...
2006-12-15
Optical characterization of long-term ordered and nanocrystalline GaP
International Nuclear Information System (INIS)
The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and doped GaP single crystals grown over 40 years ago and evaluated approximately every ...
Nuclear radiation detectors on II-VI compounds
International Nuclear Information System (INIS)
Nuclear radiation detectors in integral execution were produced by successive epitaxial growth from vapor phase of Zn Te and Cd Se thin layers onto scintillating Zn Se (Te) crystals. The irradiation of combined Zn Se (Te) - Zn Te - Cd Se detectors by Cu_K_a X-rays leads to the appearance of photoreceiver e.m.f., which tends to saturation with the increase of X-ray radiation dose reaching the value of 0.34-0.40 V at 200 R/min. The short circuit current dependence of irradiation dose power is linear. The matching factor for detectors with Zn Te-Cd Se photoreceivers with different doping levels is 0.68-0.92. The absolute monochromatic sensitivity is 0.32-0.35 m A/m W at a quantum efficiency 0.58-0.61 and a time constant 2 x 10"-"4 s. The calculated dose sensitivity for Zn Se(Te)-Zn Te-Cd Se combined detectors at the irradiation with X-rays having effective energy 8.86 keV gives the value 3.9 x 10"-"7 A/cm"2 (R/min); the experimental value of dose sensitivity reaches ...
1993-10-13
New materials for future generations of III-V solar cells
Energy Technology Data Exchange (ETDEWEB)
Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have demonstrated a depletion-width-enhanced variation of one of the ...
1999-03-01
Energy Technology Data Exchange (ETDEWEB)
This paper describes the development and a detailed analysis carried out on the luminescence characteristics of Pr{sup 3+} doped ZrF{sub 4}-BaF{sub 2}-LaF{sub 3}-YF{sub 3}-AlF{sub 3}-NaF glasses. In the present work our objectives are to elucidate the possible mechanisms that are responsible for NIR to red upconversion process and yellow to blue upconversion emission in terms of energy level schemes from the praseodymium containing fibre optical glass composition. We have studied their different physical and optical properties. Besides our investigation on the upconversion emission of these glasses, normal fluorescence studies have also been undertaken in explaining the mechanisms in demonstrating bright red and blue emissions upon excitations at visible and UV wavelengths. Besides these measurements works, a bright blue colour emission was observed under an UV source (202 nm) and upconverted prominent red emissions were observed with a laser diode (LD of 980 nm). ...
2004-04-15
Energy Technology Data Exchange (ETDEWEB)
We have demonstrated in this work (1) that methane is readily activated at mild conditions (100{degree}C, 1 torr) over a relatively noble metal, Pd. This was observed using a stepped and kinked Pd(679) crystal (1), and other crystal faces are now being investigated to establish whether the cracking of the C-H bond of methane on Pd is structure sensitive or structure insensitive. Oxygen chemisorption is extremely structure sensitive: weakly bonded, highly reactive oxygen overlayers form on Pd(100) surface (2), while strongly bonded, moderately reactive oxygen overlayers form on Pd(111) and Pd(679). Reaction of the weakly bonded oxygen with surface carbide gives rise to CO{sub 2} over clean Pd(100) but to CO over halogen-doped Pd(100) (3--5). The effect of halogens is primarily ensemble-controlling, or oxygen-supply restricting, but long range influence of surface Cl on the strength of the Pd-O bond has also been observed (3). Because the overall chemistry of methane ...
1992-12-31
Mechanisms and controlling characteristics of the catalytic oxidation of methane
Energy Technology Data Exchange (ETDEWEB)
We have demonstrated in this work (1) that methane is readily activated at mild conditions (100[degree]C, 1 torr) over a relatively noble metal, Pd. This was observed using a stepped and kinked Pd(679) crystal (1), and other crystal faces are now being investigated to establish whether the cracking of the C-H bond of methane on Pd is structure sensitive or structure insensitive. Oxygen chemisorption is extremely structure sensitive: weakly bonded, highly reactive oxygen overlayers form on Pd(100) surface (2), while strongly bonded, moderately reactive oxygen overlayers form on Pd(111) and Pd(679). Reaction of the weakly bonded oxygen with surface carbide gives rise to CO[sub 2] over clean Pd(100) but to CO over halogen-doped Pd(100) (3--5). The effect of halogens is primarily ensemble-controlling, or oxygen-supply restricting, but long range influence of surface Cl on the strength of the Pd-O bond has also been observed (3). Because the overall chemistry of methane ...
1992-01-01
International Nuclear Information System (INIS)
Single-phased Sr3B2SiO8:Eu3+ phosphor was prepared by a solid-state method at 1020 oC. The luminescence spectra showed that Sr3B2SiO8:Eu3+ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr3B2SiO8:Eu3+ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive 5D0#->#7F2 transition of Eu3+. The luminescence intensity of Sr3B2SiO8:Eu3+ at 611 and 620 nm reached the maximum when the doping content of Eu3+ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr3B2SiO8:Eu3+ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes. - Highlights: ? Sr3B2SiO8:Eu3+ was synthesized using solid-state reaction method for the first time. ? The phosphor can be efficiently excited by the near-UV chips and gives strong red emission. ? The phosphor is a ...
2011-07-01
Luminescence and laser transition studies of Dy3+:K-Mg-Al fluorophosphate glasses
International Nuclear Information System (INIS)
Dysprosium ion doped fluorophosphate glasses with compositions of PKMAFDy: (56-x/2) P2O5+17K2O+8Al2O3+(15-x/2)MgO+4AlF3+xDy2O3 (x=0.01, 0.05, 0.1, 1.0 and 2.0 mol%) have been prepared by melt quenching technique and are characterized by optical absorption, emission spectra and fluorescence lifetime measurements. The observed bands in the absorption spectrum are analysed by using free-ion Hamiltonian (HFI) model. The Judd-Ofelt (JO) analysis has been performed and the intensity parameters (??, ?=2, 4, 6) have been evaluated that are used to predict radiative properties. From emission spectra, the effective bandwidth (??eff) and the stimulated emission cross-section (?(?p)) were evaluated. The fluorescence decay from the 4F9/2 level of Dy3+ ions have been measured by monitoring the intense 4F9/2#->#6H13/2 transition (573 nm). The lifetimes (?) are found to decrease with increasing concentration due to concentration quenching. The decay curves are single ...
2009-02-28
Luminescence Properties of ScPO{sub 4} Single Crystals
Energy Technology Data Exchange (ETDEWEB)
Flux-grown ScPO{sub 4} single crystals exhibit a number of luminescence bands in their x-ray-excited luminescence spectra - including sharp lines arising from rare-earth elements plus a number of broad bands at 5.6 cV, 4.4 eV, and 3 eV. The band at 5.6 eV was attributed to a self-trapped exciton (STE) [l], and it could be excited at 7 eV and higher energies. This luminescence is strongly polarized (P = 70 %) along the optical axes of the crystal and exhibits a kinetic decay time constant that varies from several ns at room temperature to {approximately}10 {micro}s at 60 K and up to {approximately}1 ms at 10 K. It is assumed that the STE is localized on the SC ions. The band at 3 eV can be excited in the range of the ScPO{sub 4} crystal transparency (decay time = 3 to 4 {micro}s.) This band is attributed to a lead impurity that creates different luminescence centers. At high temperatures, the band at 4.4 eV is dominant in the x-ray-excited TSL and afterglow spectra. Its intensity ...
1999-08-16
Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs
Energy Technology Data Exchange (ETDEWEB)
The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms ...
1999-02-23
Energy Technology Data Exchange (ETDEWEB)
V{sub 2}O{sub 5} based compounds are interesting low potential materials for rechargeable cathodes of lithium electrochemical generators. However, the ionic conductivity and the reversibility of electrochemical cycling of V{sub 2}O{sub 5} are limited by the possibilities of lithium insertion. This work shows that the doping of vanadium pentoxide by a M{sup 3+} trivalent transition element (M Fe, Al, Cr or La) allows to intercalate a more important amount of lithium and to improve the behaviour of the material during cycling. These materials of M{sub 0.11}V{sub 2}O{sub 5.16} formula are obtained by sol-gel synthesis. the electrochemical study of the Fe compound has shown that it is a mixed oxide with a behaviour similar to V{sub 2}O{sub 5}. The maximum capacity is of about 2 F/mole in the case of Fe, Al and Cr compounds and of about 1.7 F/mole in the case of La. The structural evolution of the Fe compound has been followed during the chemical insertion of Li and the ...
1996-12-31
Energy Technology Data Exchange (ETDEWEB)
A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening process than pure interstitial clusters do, so ...
2002-01-01
International Nuclear Information System (INIS)
Oxide ionic conductivities of (CeO_2)_x(Sc_2O_3)_(_0_._1_1_-_x_)(ZrO_2)_0_._8_9 (x = 0.01-0.10) electrolytes were optimized for the application in intermediate-temperature solid oxide fuel cell (IT-SOFC). Powders with different contents of CeO_2 and Sc_2O_3 were prepared via a co-precipitation method. The obtained powders and pellets were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and impedance spectroscopy. Among all the compositions, (CeO_2)_0_._0_4(Sc_2O_3)_0_._0_7(ZrO_2)_0_._8_9(4Ce7ScZr) gives the highest ionic conductivity of 0.065 S cm"-"1 at 800 "oC. The effects on densification and electrical properties of different sintering additives, such as SiO_2, MgO, Co_3O_4, MoO_3 and Bi_2O_3, were studied and different conducting behavior with these additives were observed. The densification temperatures of CeO_2 and Sc_2O_3 co-doped electrolytes can be reduced by around 280 "oC with the ...
2010-07-23
International Nuclear Information System (INIS)
We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...
2005-04-18
Grain growth in CeO{sub 2}: dopant effects, defect mechanism, and solute drag
Energy Technology Data Exchange (ETDEWEB)
The effects of the dopants, Mg{sup 2+}, Ca{sup 2+}, Sr{sup 2+}, Sc{sup 3+}, Yb{sup 3+}, Y{sup 3+}, Gd{sup 3+}, La{sup 3+}, Ti{sup 4+}, Zr{sup 4+}, and Nb{sup 5+}, on the grain boundary mobility of dense CeO{sub 2} have been investigated from 1,270 to 1,420 C. Parabolic grain growth has been observed in all instances. Together with atmospheric effects, the results support the mechanism of cation interstitial transport being the rate-limiting step. A strong solute drag effect has been demonstrated for diffusion-enhancing dopants such as Mg{sup 2+} and Ca{sup 2+}, which, at high concentrations, can nevertheless suppress grain boundary mobility. Severely undersized dopants (Mg, Sc, Ti, and Nb) have a tendency to markedly enhance grain boundary mobility, probably due to the large distortion of the surrounding lattice that apparently facilitates defect migration. Overall, the most effective grain growth inhibitor at 1.0% doping is Y{sup 3+}, while the most potent grain ...
1996-07-01
International Nuclear Information System (INIS)
BaZr_0_._1Ce_0_._7Y_0_._2O_3_-_#delta# (BZCY7) exhibits adequate proton conductivity as well as sufficient chemical and thermal stability over a wide range of SOFC operating conditions, while layered GdBa_0_._5Sr_0_._5Co_2O_5_+_#delta# (GBSC) perovskite deposited on a doped ceria electrolyte demonstrates advanced electrochemical properties. This research fully takes advantage of these advanced properties and develops novel protonic ceramic membrane fuel cells (PCMFCs) of Ni-BZCY7|BZCY7|GBSC. The results show that the open-circuit potential of 1.003 V, maximum power density of 430 mW cm"-"2, and a low polarization resistance of the electrodes of 0.08 #OMEGA# cm"2 are achieved at 700 "oC. With temperature increases, the total cell resistance decreases, among which electrolyte resistance becomes increasingly dominant over polarization resistance. The results also indicate that GBSC perovskite cathode is a good candidate for intermediate temperature PCMFC development, ...
2010-04-30
Evaluation of a novel radiopacifiying agent on the physical properties of surgical spineplex.
Polymethlylmethacrylate (PMMA) is the most frequently used cement for percutaneous vertebroplasty and kyphoplasty. To aid visualisation during surgery cements are doped with radiopacifying agents such as Barium sulphate (Ba(2)SO(4)) or Zirconium Dioxide (ZiO(2)). Mounting research suggests that these agents may impair the biocompatibility of the cements. However, incorporating an alternative radiopacifier agent with excellent biocompatibility would be a significant step forward. Bioactive radiopaque glasses incorporating elements such as strontium (Sr) and zinc (Zn), known to have beneficial and therapeutic effects on bone, are of great interest in this respect. In this study, the Ba(2)SO(4) of the commercially available Spineplex was incrementally replaced with a radiopaque therapeutic glass composition. The resulting effects on cement setting time, peak isotherm, ultimate compressive strength, Young's modulus (up to 30 days cement maturation) and radiopacity were ...
2009-08-18
Energy Technology Data Exchange (ETDEWEB)
Holmium doped barium based hexaferrites BaFe{sub 12-2x}Ho{sub 2x}O{sub 19} with (x = 0.0-1.0) were synthesized by solid state reaction method. Structural and magnetic characterization of these ferrites provide significant information about their reactive physical properties. X-ray analysis reveals that in all samples M-type structure exist with few secondary phases. Scanning electron microscope revealed the grain size of the specimen. The results show that grain size decreases with the substitution degree of Holmium. Thus rare earth element Holmium Ho{sup 3+} acts as a grain growth inhibitor. The magnetic hysteresis loops show the variation in the values of magnetic parameters like saturation magnetization (M{sub s}), remanent magnetization (M{sub r}) and coercivity (H{sub c}) were observed by changing Ho{sup 3+} content in BaFe{sub 12-2x}Ho{sub 2x}O{sub 19} ferrites. Coercivity showed a maximum value of 2230 Oe for (x = 0.4) and then decreasing trend were observed ...
2010-04-09
Effect of Ba on ferroelectric and piezoelectric properties of the PLZT (1.2/55/45) system
International Nuclear Information System (INIS)
Ferroelectric Pb_0_._9_8_2_-_zLa_0_._0_1_2#DELTA#_0_._0_0_6Ba_z(Zr_0_._5_5Ti_0_._4_5)O_3 (PLZT; z = 0-6 mol%) ceramic compositions were fabricated by a mixed-oxide method. X-ray diffraction studies of sintered ceramics indicate the coexistence of rhombohedral and tetragonal phases in the 5 mol% Ba-doped PLZT composition. Grain growth is inhibited with increasing Ba concentration in the PLZT system as evidenced by scanning electron micrographs. Dielectric constant and dielectric loss as a function of temperature suggest that #epsilon#_r_t and tan #delta# are increased up to compositions containing 4 and 5 mol% Ba, respectively. The dielectric maximum (#epsilon#_T_c) decreased to 4 mol% Ba and gradually increased to 6 mol% Ba, whereas, with increasing Ba concentration in the PLZT system, the Curie temperature (T_C) decreased from the composition with no Ba to that with 6 mol% Ba. Relaxor behavior as a function of temperature and frequency was studied over the ...
2006-06-01
EPR and FT-IR spectroscopic studies of Bi{sub 2}O{sub 3}-B{sub 2}O{sub 3}-CuO glasses
Energy Technology Data Exchange (ETDEWEB)
EPR and FT-IR absorption measurements have been performed for xCuO.(100-x)[2Bi{sub 2}O{sub 3}.B{sub 2}O{sub 3}] glass system, with 0{<=}x{<=}50 mol%. The mode in which the addition of the copper ions influences the structure of 2Bi{sub 2}O{sub 3}.B{sub 2}O{sub 3} glass matrix was analyzed. The EPR absorption spectra revealed the presence in the glass structure of Cu{sup 2+} ions in axially distorted octahedral environments. EPR data pointed out the simultaneous presence of Cu{sup 2+} and Cu{sup +} ionic species in the glasses with x{>=}5 mol%. For x>10 mol%, the Cu{sup 2+} ions participate in the superexchange magnetic interactions, which increase with CuO content. The FT-IR spectra showed the presence of some bands that are assigned to vibrations of Bi-O bonds from BiO{sub 3} pyramidal and BiO{sub 6} octahedral units and B-O bonds from BO{sub 3} and BO{sub 4} units. The data obtained by these measurements reveal the structural changes in the 2Bi{sub 2}O{sub ...
2008-10-01
Defect engineering via ion implantation to control B diffusion in Si
International Nuclear Information System (INIS)
The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological process to focus on the benefit of the cavity ...
2009-03-15
Crystal structure of ABPO{sub 5} and optical study of Pr{sup 3+} embedded in these compounds
Energy Technology Data Exchange (ETDEWEB)
The crystal structure of borophosphates ABPO{sub 5} (A = alkaline earth or Pb) was resolved on a polycrystalline sample using the Rietveld method. The x-ray diffraction patterns data show that ABPO{sub 5} crystallize in a centrosymmetric space group P3{sub 1}21 and their structure is related to the borogermanates REBGeO{sub 5} with a stillwellite-type structure. Pr{sup 3+} ion was used as a local structural probe to corroborate the structural resolution results. Absorption and fluorescence spectra of A{sub 1-x}Pr{sub x}BP{sub 1-x}Ge{sub x}O{sub 5} (A alkaline earth or Pb; x = 0.05) have been investigated at different temperatures. At 9 K the 3{sup H}{sub 4}{yields}{sup 3}P{sub 0} transition of trivalent praseodymium ion (4f{sup 2} configuration) is observed as a single line. This indicates a unique crystallographic site for the rare earth ion in these compounds replacing the divalent cation. Energy level schemes were deduced from the low-temperature spectroscopic measurements. ...
2001-10-22
Crystal structure of ABPO_5 and optical study of Pr"3"+ embedded in these compounds
International Nuclear Information System (INIS)
The crystal structure of borophosphates ABPO_5 (A = alkaline earth or Pb) was resolved on a polycrystalline sample using the Rietveld method. The x-ray diffraction patterns data show that ABPO_5 crystallize in a centrosymmetric space group P3_121 and their structure is related to the borogermanates REBGeO_5 with a stillwellite-type structure. Pr"3"+ ion was used as a local structural probe to corroborate the structural resolution results. Absorption and fluorescence spectra of A_1_-_xPr_xBP_1_-_xGe_xO_5 (A alkaline earth or Pb; x = 0.05) have been investigated at different temperatures. At 9 K the 3"H_4#->#"3P_0 transition of trivalent praseodymium ion (4f"2 configuration) is observed as a single line. This indicates a unique crystallographic site for the rare earth ion in these compounds replacing the divalent cation. Energy level schemes were deduced from the low-temperature spectroscopic measurements. Comparing the electronic level splittings of studied compounds with the already ...
2001-10-22
Energy Technology Data Exchange (ETDEWEB)
[sup 13]C epitaxial diamond films have been grown on [sup 12]C-type IIb diamond substrates doped with boron, using electron assisted chemical vapor deposition. The relation between etch pits to dislocations in [sup 13]C diamond film and the broadening of the first-order Raman peak was examined. The reactant gas was [sup 13]CH[sub 4] of > 99% purity. The substrate temperature was varied from 943 to 1300 C. The uneven surface morphology was confirmed by atomic force microscopy (AFM) and laser microscopy. From 943 to 1030 C, etch pit rows along left angle 100 right angle were observed. At 991 C, the etch pit density on a row was 3300 to 5000 pits/cm. The Ar[sup +] laser beam was focused on a transparent area near the row of etch pits, where the boron impurity of the substrate is less than several 10 ppm. The first-order Raman line of [sup 13]C epitaxial diamond film was broadened to 3.6-4.0 cm[sup -1]. The line broadening was 50-90% compared with that of the [sup ...
1993-03-01
Crystal field influence on the {sup 8}S{sub 7/2} ground state splitting of Bk{sup 4+} in CeF{sub 4}.
Energy Technology Data Exchange (ETDEWEB)
The one-particle models of crystal-field theory provide a qualitative interpretation for the observed ground state splitting of four Kramers doublets of the {sup 8}S{sub 7/2} of Bk{sup 4+} doped into CeF{sub 4}. A set of nine nonzero (B{sup k}{sub q}) parameters corresponding a C{sub 2v} point symmetry provide a very good correlation between the experimental data and simulated energy level schemes within a rms deviation of 13.7 cm{sup -1}. The calculated and experimental energy values have the same order-of-magnitude for the ground state and excited components. The total ground state splitting of the S-state ions of f-elements such as Bk{sup 4+} in CeF{sub 4} is larger when compared with Cm{sup 3+} :LaCl{sub 3} and Gd{sup 3+} :La(C{sub 2}H{sub 5}SO{sub 4}){sub 3}-9H{sub 2}O ions. The so-called crystal-field strength parameter, N{sub v}, increases as a function of the increasing maximum splitting of the ground state due to a decrease in the participation of the pure ...
2000-03-01
Comparative study of the crystal field effects in rare earth oxynitrates
Energy Technology Data Exchange (ETDEWEB)
The photoluminescence spectra of the lanthanum and gadolinium oxynitrates doped with Eu[sup 3+], REONO[sub 3]:Eu[sup 3+] (RE=La and Gd) were measured at 77 and 300 K. The [sup 7]F[sub J] (J=0-5) energy level schemes for the 4f [sup 6] electron configuration were simulated by a C[sub 2v] phenomenological crystal field (CF). The nine non-zero CF parameters for the C[sub 2v] site symmetry reproduce the experimental energy level schemes with rms deviations of 7 and 5 cm[sup -1] for the LaONO[sub 3] and GdONO[sub 3] hosts, respectively. The CF effect is stronger in the lanthanum host although otherwise the CF parameters for the two oxynitrate hosts differ only slightly. The B[sup k][sub 2] (k=2, 4 and 6) values are low indicating only a slight deviation from a higher C[sub 4v] symmetry. The B[sup 2][sub 0], B[sup 4][sub 0] and B[sup 4][sub 4] parameters assume high values which are similar to those obtained previously for the other RE oxy compounds, i.e. oxyhalides, ...
1994-06-01
Catalysis on Mo(CO)/sub 6/-derived supported molybdenum catalysts: CO oxidation with N/sub 2/O
Energy Technology Data Exchange (ETDEWEB)
The catalytic nature of Mo(CO)/sub 6/ supported on ..gamma..-Al/sub 2/O/sub 3/, KOH-doped ..gamma..-Al/sub 2/O/sub 3/, and HY-zeolite was investigated in CO oxidation with N/sub 2/O in comparison with that of a conventional partially reduced MoO/sub 3//..gamma..-Al/sub 2/O/sub 3/ catalyst. Kinetic parameters of this reaction were obtained in the range 0 to 100/sup 0/C; the rate law r = kP/sub N/sub 2/O//sup 1/P/sub CO//sup 0/ was found on all catalysts, and the activation energy was estimated to be 9.1 kcal/mol on the Mo(CO)/sub 6/-derived catalysts and 7.1 kcal/mol on the partially reduced MoO/sub 3//..gamma..-Al/sub 2/O/sub 3/ catalyst. Maximum catalytic activities were obtained by activating the Mo(CO)/sub 6/-derived catalysts at 400/sup 0/C. To obtain similar activity on the MoO/sub 3//..gamma..-Al/sub 2/O/sub 3/ catalyst, it was necessary to reduce at 600/sup 0/C. The former catalysts were deactivated on repeating the reaction. On the basis of these results ...
1988-05-01
Behaviour of silicon released during alteration of nuclear waste glass in compacted clay
Energy Technology Data Exchange (ETDEWEB)
Long term integrated in situ experiments are performed in the HADES underground research facility (Mol, Belgium) in order to study the coupled reactivity between the different components of an underground repository for vitrified high level radioactive waste (HLW): glass, compacted clay, and stainless steel containers, at 90 degrees C and under gamma irradiation. Studies pertaining to the behaviour of silicon, a major element released during glass alteration, are presented here. Data collected from the integrated experiment, from simplified tests, and from modelling are put together, giving complementary information. The integrated experiment is used to investigate overall reactivity, whereas diffusion experiments coupled with modelling focused on the precipitation of silica in clay media. In the integrated in situ experiment, a bentonite clay (FoCa7) mixed with 5 wt.% of powdered glass frit was put in contact with U/Th-doped SON68 reference glass specimens for 1.2 ...
2007-02-15
Energy Technology Data Exchange (ETDEWEB)
The world`s population of research reactors is growing old. Many have been adapted to serve new purposes over their lives, from testing materials for nuclear power programmes and supporting neutron physics experiments, to colouring gemstones, doping silicon and generating medical isotopes. In the first article of this survey of research reactor issues, Wilfried Krull from GKSS in Germany describes the effects on a reactor of supporting these changes in application as ``design ageing`` . Managing this and other symptoms of ageing to extend plant life is a key task for operators, and Krull discusses the efforts being made internationally to handle them. Eventually, terminal decline of one vital component can determine when a reactor has to be shutdown for refurbishment. For BR2 in Belgium, it was the beryllium matrix. Edgar Koonen from SCK-CEN explains work being done to replace it and extend reactor life for around 15 years. The Triga at the University of Austria`s ...
1995-12-01
International Nuclear Information System (INIS)
This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at #lambda##approx#380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p- Al_0_._1_2Ga_0_._8_8N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_0_._1_2Ga_0_._8_8N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO_2 composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated ...
2009-04-22
A systematic analysis of the spectra of trivalent actinide chlorides in D_3_h site symmetry
International Nuclear Information System (INIS)
The optical spectra of actinide ions in the compound AnCl_3 and doped into single crystal LaCl_3 were interpreted in terms of transitions within 5f"N configurations. Energy-level calculations were carried out using an effective operator Hamiltonian, the parameters of which were determined by fitting experimental data. Atomic and crystal-field matrices were diagonalized simultaneously assuming an approximate D_3_h site symmetry. The spectroscopic data were taken from the literature but in most cases supplemented by unpublished measurements in absorption and in fluorescence. Spectroscopic data for each ion were analyzed independently, then the model parameters were intercompared and in many cases adjusted such that in the final fitting process the principal interactions showed uniform trends in parameter values with increasing atomic number. Consistent with analyses of the spectra of lanthanide ions in both LaCl_3 and LaF_3, abrupt changes in magnitude of certain ...
1986-08-01
A radiation hardening model of 9Cr-martensitic steels including Dpa and helium
International Nuclear Information System (INIS)
Full text of publication follows: Low activation ferritic/martensitic steels are receiving a high priority in the European long term materials research. Although extensively investigated, the available experimental data do not cover all required parameter ranges and cannot unambiguously be used to produce hardening/embrittlement trend curves. Therefore, the main objective of this work is to provide a physically-based engineering model offering a rational to experimental observations. From the literature, experimental data were selected to establish a database that mainly consists of 8 to 9Cr-steels irradiated in the range of 50 to 600 deg. C up to 30 dpa and with a He-content up to 5000 appm. The database includes neutron and proton irradiations, He-implanted as well as B- and Ni-doped steels. Because of the difficulty of interpretation inherent to the Charpy impact test, only tensile data were considered. The difficulty stems from the large range of specimen sizes ...
2007-12-10
A comparison of x-ray detectors for mouse CT imaging
International Nuclear Information System (INIS)
There is significant interest in using computed tomography (CT) for in vivo imaging applications in mouse models of disease. Most commercially available mouse x-ray CT scanners utilize a charge-coupled device (CCD) detector coupled via fibre optic taper to a phosphor screen. However, there has been little research to determine if this is the optimum detector for the specific task of in vivo mouse imaging. To investigate this issue, we have evaluated four detectors, including an amorphous selenium (a-Se) detector, an amorphous silicon (a-Si) detector with a gadolinium oxysulphide (GOS) screen, a CCD with a 3:1 fibre taper and a GOS screen, and a CCD with a 2:1 fibre taper and both GOS and thallium-doped caesium iodide (CsI:Tl) screens. The detectors were evaluated by measuring the modulation transfer function (MTF), noise power spectrum (NPS), detective quantum efficiency (DQE), stability over multiple exposures, and noise in reconstructed CT images. The a-Se ...
2004-12-07
Energy Technology Data Exchange (ETDEWEB)
In the framework of the search for a ceramic material usable in the radioactive waste storage, uranium and thorium phosphates have been investigated. Their experimental synthesis conditions have been entirely reviewed, they lead to the preparation of four new compounds: U(UO{sub 2})(PO{sub 4}){sub 2}, U{sub 2}O(PO{sub 4}){sub 2}, UCIPO{sub 4}, 4H{sub 2}O, and Th{sub 4}(PO{sub 4}){sub 4}P{sub 2}O{sub 7}. Experimental evidenced are advanced for non existent compounds such as: U{sub 3}(PO{sub 4}){sub 4}, U{sub 2}O{sub 3}P{sub 2}O{sub 7} and Th{sub 3} (PO{sub 4}){sub 4}. Characterization by several techniques (X-rays and neutron powder diffractions, UV-Visible and Infra-red spectroscopies, XPS,...) were performed. The ab initio structure determination of U(UO{sub 2})(PO{sub 4}){sub 2} has been achieved by X-rays and refined by neutron diffractions. Through its physico-chemical analysis, we found that this compound was a new mixed valence uranium phosphate in which U{sup 4+} and UO{sub ...
1995-03-01
Energy Technology Data Exchange (ETDEWEB)
LEDF(Large Equipment Dismantling Facility) is the solid waste processing technology development facility that carries out high-volume reduction and low dosage processing. The high-volume reduction processing of the high dose {alpha}-waste configured with combustible waste, pvc and rubber, spent ion exchange resin, and noncombustible waste have been planned the incinerating and melting facility using the in-can type high frequency induction heating in LEDF. This test is intended to clarify the design data. It was confirmed that the incinerating and melting performance, molten solid properties and exhaust gas processing performance with pilot testing equipment and bench scale equipment. The result of this test are as follows. 1. Processing speed is 6.7 kg/h for the combustible waste, 13.0 kg/h for the ion exchange resin, and 30.0 kg/h for the noncombustible waste. For above optimum processing conditions are as follows. Operating temperature is 1000degC for the combustible waste, 1300degC ...
1999-12-01
International Nuclear Information System (INIS)
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping showed an abrupt increase in photocurrent ...
2010-02-01
Energy Technology Data Exchange (ETDEWEB)
In this work, we perform spectroscopic studies to characterize the energy transfer processes occurring in rare-earth doped lithium fluoride systems, aiming the optimization of the population inversion of these media. Yb{sup 3+} ion was used in order to probe the electron-phonon coupling in LiYF{sub 4}, LiGdF{sub 4} and LiLuF{sub 4} matrices. In these systems it was obtained the average phononenergy, the vibronic transition probability and Huang-Rhys coupling constant. These parameters are dependent on the crystal host and the LiLuF{sub 4} system presents excluded correlation effects, an electronic repulsion that weakens the vibronic coupling. The Tm:Ho:LiYF{sub 4} system was studied under diode laser pumping at 796 nm, aiming the 2 {mu}m emission optimization. The ideal conditions of concentration and laser power were determined favouring the latter emission. Upconversion processes of two photons were identified besides the energy transfer among ions. The dynamic ...
2001-07-01
Rare-earth doped (#alpha#'/#beta#')-sialon ceramics
International Nuclear Information System (INIS)
The objectives of this research were to investigate the possibility of controlling the #alpha#'/#beta#' phase ratio and morphology in Sialon ceramics. These objectives have been sought by the control of the starting composition, and by post sintering heat treatment. The main emphasis has been on the production of a series of #alpha#' and (#alpha#'+#beta#') Sialon ceramics with a minimum amount of the glass phase by the pressureless sintering technique and using ytterbium (Yb) as an #alpha#' stabilising element. The Yb additions were made via the oxide or the alumino- silicate presynthesised glass; the latter was found to improve the density. The XRD analysis of the as sintered materials revealed #alpha#' to be the dominant phase with minor contributions from #beta#' sialon and/ or 12H A1N polytype. Additions of SiO_2 or #beta#-Si_3N_4 were made to various materials to assess potential mechanisms for obtaining control over the microstructural development of #alpha#'/#beta#' sialon ...
Energy Technology Data Exchange (ETDEWEB)
Energy from biomass is a CO{sub 2} neutral, sustainable form of energy. Anaerobic digestion is an established technology for converting biomass to biogas, which contains around 60% methane, besides CO{sub 2} and various contaminants. Most types of biomass contain material that cannot be digested; in woody biomass, this portion is particularly high. Therefore, conventional anaerobic digestion is not suited for the production of biogas from woody biomass. While wood is already being converted to energy by conventional thermal methods (gasification with subsequent methanation), dung, manure, and sewage sludge represent types of biomass whose energy potential remains largely untapped (present energetic use of manure in Switzerland: 0.4%). Conventional gas phase processes suffer from a low efficiency due to the high water content of the feed (enthalpy of vaporization). An alternative technology is the hydrothermal gasification: the water contained within the biomass serves as reaction ...
2007-07-01
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