Coverage and large scale anisotropies estimation methods for the Pierre Auger Observatory
Energy Technology Data Exchange (ETDEWEB)
When searching for anisotropies in the arrival directions of Ultra High Energy Cosmic Rays, one must estimate the number of events expected in each direction of the sky in the case of a perfect isotropy. We present in this article a new method, developed for the Auger Observatory, based on a smooth estimate of the zenith angle distribution obtained from the data itself (which is essentially unchanged in the case of the presence of a large scale anisotropy pattern). We also study the sensitivity of several methods to detect large-scale anisotropies in the cosmic ray arrival direction distribution : Rayleigh analysis, dipole fitting and angular power spectrum estimation.
2005-07-01
Future limits on isotropic Lorentz violation in the photon sector from UHECRs and TeV gamma rays
Present and future ultra-high-energy-cosmic-ray facilities (e.g., the Pierre Auger Observatory with South and North components) and TeV-gamma-ray telescope arrays (e.g., HESS/VERITAS and CTA) have the potential to set stringent indirect bounds on the nine Lorentz-violating parameters of nonbirefringent modified Maxwell theory minimally coupled to standard Dirac theory. Theoretically, the most interesting case is isotropic Lorentz violation, which is described by a single parameter [taken to vanish for the case of the standard Lorentz-invariant theory]. It appears possible to obtain in the future an upper (lower) indirect bound on this single isotropic Lorentz-violating parameter at the +10^{-21} (-10^{-17}) level. Comparison is made with existing and future direct bounds from laboratory experiments. The possible physics implications of upper bounds at the 10^{-21} level are also briefly discussed.
2011-01-01
Augmented-plane-wave calculations of the electronic structure of intermetallic compounds YCu and YZn
International Nuclear Information System (INIS)
(1 Aug 1972). United States Belakhovskii, M. Pierre, J. Ray, DK v.
Intensity of auger-emission of silicon from binary compounds in the ion auger spectroscopy
International Nuclear Information System (INIS)
Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.
Studies about oxygen accumulation in palladium silicide formed at Pd/a-Si interface
International Nuclear Information System (INIS)
... 194 p. auger electron spectroscopy decomposition deposition interfaces oxygen
1986-04-23
Silicon L/sub 2/ /sub 3/VV Auger Lineshape and oxygen chemisorption study of Pd/sub 4/Si
Energy Technology Data Exchange (ETDEWEB)
The Si L/sub 2/ /sub 3/VV Auger Lineshape for Pd/sub 4/Si was measured and found to be in good agreement with the self-fold of the Si partial density of states model calculated by Riley et al. Oxygen chemisorption altered both the Auger lineshape and the HeI photoemission spectrum, especially near the Fermi energy.
1981-01-01
Spin-polarized Auger-electron diffraction study of the magnetic poisoning of Fe(001) by sulfur
International Nuclear Information System (INIS)
Spin-polarized angle-resolved sulfur L_2_,_3VV Auger-electron spectra have been recorded for the c(2x2)S/Fe(001) system. The data show the modulation of the sulfur Auger spin polarization as a function of emission angle, which represents an observation of spin-polarized Auger-electron diffraction (SPAED), a potentially powerful tool for the study of local magnetic structure at surfaces, interfaces, and thin films. Theoretical modeling of the SPAED data indicates a large decrease in the magnetization of the top iron layer, suggesting a magnetic poisoning induced by the sulfur overlayer. These findings are independently supported by the observation of a large decrease of secondary electron spin polarization upon sulfur adsorption.
Principal component analysis as a method for silicide investigation with Auger electron spectroscopy
Energy Technology Data Exchange (ETDEWEB)
The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA.
1983-10-16
Principal component analysis as a method for silicide investigation with Auger electron spectroscopy
International Nuclear Information System (INIS)
The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA. (author).
Energy Technology Data Exchange (ETDEWEB)
Frequency response measurements are used to determine the carrier lifetime of 1.3-..mu..m InGaAsP buried heterostructure lasers between 1 mA and threshold. The data confirm previous results on the radiative and Auger recombination coefficients and reveal the presence of a nonradiative current which dominates at low currents and contributes 4 mA at threshold.
1987-02-09
Study of passive films formed on stainless steel surfaces, using Auger spectroscopy
International Nuclear Information System (INIS)
This paper deals with the characterization of passive films formed on stainless steel (26% Cr and 0 to 3%Mo). The influence of the applied passivation potential and the effect of molybdenum additions to steel upon the composition profiles of passive films formed in an aqueous NaCl solution (3.5% at pH 2.5) are studied. The technique involved is Auger electron spectroscopy combined with ion sputtering. Some electrochemical techniques have been used in conjunction. A quantitative approach of the Auger spectra during the progressive removal of the passive film is described. The peak-to-peak height of the Auger lines are treated in order to yield the atomic fraction of the various elements present in a given subsurface layer. The analytical study of the film by electron spectroscopy indicates that molybdenum plays a part at the metal-oxide interface where this element acts on the chromium diffusion process. This phenomenon, ...
1975-01-01
Coal compilation project - Pierre Greys Lakes NTS 83E/15
Energy Technology Data Exchange (ETDEWEB)
The main purpose of the pilot Coal Compilation Project is to provide coal resource maps to stimulate and support industry exploration programs, and assist government in matters of resource management. An essential feature of the program is the use of cost effective Geoscience Information System (GSIS) technology that allows the database and various thematic maps to be analyzed, updated, and displayed with complete flexibility at any scale. This report describes the main features (geology, resource management, coal occurrences, etc.) of the study area, mapsheet NTS 83E/15 (Pierre Greys Lakes), and includes a copy of the 1:50,000 scale map produced. The study area is located in west-central Alberta and contains coal measures deposited amid thick successions of sandstones, siltstones, shales and conglomerates. These coal-bearing sequences are part of the Lower Cretaceous Luscar Group, Upper Cretaceous Brazeau Formation and Paleocene Coalspur Formations. Within the ...
1990-01-01
Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)
1975-01-01
Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures
International Nuclear Information System (INIS)
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.
THE EVOLUTION OF THE KINEMATICS OF NEBULAR SHELLS IN PLANETARY NEBULAE IN THE MILKY WAY BULGE
International Nuclear Information System (INIS)
We study the line widths in the [O III]#lambda#5007 and H#alpha# lines for two groups of planetary nebulae in the Milky Way bulge based upon spectroscopy obtained at the Observatorio Astronomico Nacional in the Sierra San Pedro Martir (OAN-SPM) using the Manchester Echelle Spectrograph. The first sample includes objects early in their evolution, having high H#beta# luminosities, but [O III]#lambda#5007/H#beta# < 3. The second sample comprises objects late in their evolution, with He II #lambda#4686/H#beta#>0.5. These planetary nebulae represent evolutionary phases preceding and following those of the objects studied by Richer et al. in 2008. Our sample of planetary nebulae with weak [O III]#lambda#5007 has a line width distribution similar to that of the expansion velocities of the envelopes of asymptotic giant branch stars and shifted to systematically lower values as compared to the less evolved objects studied by Richer et al. The sample with strong He II ...
2010-06-10
Observation of a surface peak in low energy implant depth profiles in silicon
Energy Technology Data Exchange (ETDEWEB)
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
1984-03-01
Energy Technology Data Exchange (ETDEWEB)
The transformation of Pd/Si to Pd{sub 2}Si/Si is investigated using depth-resolved positron annihilation, x-ray diffraction and Auger electron spectroscopy studies. The observed defect-sensitive positron S-parameter value of 1.022-1.054 indicates the existence of divacancies across the silicide/silicon interface and Si substrate region. Our experimental observation of vacancy defects is consistent with the model proposed for excess vacancy generation across the interface consequent to Si diffusion. (letter to the editor)
2003-11-26
Auger analysis of etch residues in submicrometer via holes using focused ion beam sample preparation
Energy Technology Data Exchange (ETDEWEB)
The composition and thickness of etch residues on the base of submicrometer via holes cannot be surmized from data on larger features. Auger sputter depth profiles were used to compare etch residues in 0.55 {mu}m via holes produced by different etch processes and remaining after different cleans. These residues varied significantly in composition and thickness with the processing history of the sample and from those on larger features. A focused ion beam (FIB) sample preparation was developed to expose the bases of via holes and to help reduce sample charging. (author).
1995-02-01
Improvement of wood quality used in Syria by irradiation polymerization
International Nuclear Information System (INIS)
Wood plastic composites (WPC) have been prepared with five low-grade woods, native to Syria, and with Okoume (aucoumea klaineana pierre) imported to Syria in large quantities. Three monomer systems; acrylamide, butylmethacrylate, and styrene were used. polymerization was induced at various radiation doses (10, 20, and 30 kGy) to study the role of radiation doses using a "6"0Co gamma radiation source. Some physical properties of WPC, namely polymer loading and compression strength or tensile strength of the obtained wood polymer composites (WPC) were studied. The effect of the additives, sulfuric acid (H"+), N-vinyl pyrrolidone (NVP), trimethyolpropane triacrylate (TMPTA), urea (U), lithium nitrate (LiNo_3), copper sulfate (CuSO_4) and co-additives on monomer system polymerization were also investigated. Methanol, water and water/methanol mixtures were used as the swelling agents. In general, the use of additives and co-additives brought about an enhancement of ...
2010-04-01
Energy Technology Data Exchange (ETDEWEB)
This paper reported on a new cutting mechanism that cuts fresh wood into small pieces instead of wood chips in order to avoid the problem of fermentation that occurs in storage. The prototype cutting device performs a gradual and oblique cut. It consists of a large auger in which a knife is inserted on the outer edge of the helicoid. Tree trunks up to 20 cm in diameter are fed perpendicularly into the machine and are pushed along the axis where slices are cut off against a fixed sharp-edged counter blade. The cylinder enclosing the auger is the main frame of the machine, and is closed at one end, where a heavy flywheel delivers the energy coming from the tractor's power take-off (PTO). The wood pieces ranging in length from 4 to 19 cm exit through the opposite end. The auger is 700 mm in diameter with a 300 mm pitch spacing. The logs are pushed into the machine by counter-rotating rollers placed in the feed funnel. ...
2010-07-01
International Nuclear Information System (INIS)
The KLL Auger electron spectrum of "8"8Sr generated in the EC-decay of "8"8Y has been analyzed at the instrumental resolution of 11 eV using a combined electrostatic spectrometer. Energies and relative intensities of the all nine transitions were determined and compared with theoretical predictions. Our value of 12067.3(12) eV measured for the absolute energy of the dominant KL_2L_3("1D_2) transition was found to be higher by 7.4 eV (i.e., more than 3#sigma#) than that one obtained in a measurement with external excitation. The discrepancy indicates substantial influence of the 'atomic structure effect' on absolute transition energies in our experiment. Very good agreement of the measured 0.14(3) and predicted 0.12 values for the KL_1L_2("3P_0/"1P_1) Auger transition intensity ratio clearly proved the predicted strong influence of the relativistic effects on the KL_1L_2("3P_0) transition rate even at Z = 38.
2007-08-01
International Nuclear Information System (INIS)
Autoionizing and Auger transitions in atomic manganese and samarium have been experimentally investigated by observation of the ejected electrons in the energy region 0 to 40 eV following electron impact excitation with incident beams in the energy range 15-500 eV. Seventy-four spectral features are tabulated for manganese and a number of new assignments have been made based on pseudo-relativistic Hartree-Fock calculations and quantum defect analysis. A similar study of samarium reveals only a number of broad features in the ejected-electron energy range 8-10 eV. Three features have been observed consistently in the ejected-electron spectrum of samarium and assigned by comparison with previous work. (author).
Study of surface segregation of Si on palladium silicide using Auger electron spectroscopy
International Nuclear Information System (INIS)
The transformation of Pd/Si to Pd_2Si/Si is studied using Auger electron spectroscopy over a wide temperature range of 370-1020 K. The Pd film gets totally converted to Pd_2Si upon annealing at 520 K, and beyond 570 K, Si starts segregating on the surface of silicide. It is found that the presence of surface oxygen influences the segregation of Si. The time evolution study of Si segregation reveals that segregation kinetics is very fast and the segregated Si concentration increases as the temperature is increased. Scanning electron microscopy measurements show that Pd_2Si is formed in the form of islands, which grow as the annealing temperature is increased.
2004-11-21
Electronic and spectral properties of adatoms on metals in electrostatic fields
Energy Technology Data Exchange (ETDEWEB)
Electrostatic fields of the order of 1 V/Angst, as they occur at field emission tips, are comparable to those experienced by valence electrons in atoms and molecules. Such fields are strong enough to induce a significant redistribution of the valence charge in chemical bonds. In this work we investigate the effects on the electronic properties of a single adatom on a metal surface induced by the presence of an electrostatic field. In particular we present the results of a full ab initio DFT calculation, within the embedding method, of the CCV Auger spectra of Si and Mg atoms in and on a jellium-Ag host. Differently from impurities in bulk, Auger spectral profiles of adsorbates on metal surfaces can show notable modifications due to the applied electric field.
2002-11-15
Energy Technology Data Exchange (ETDEWEB)
The measurements of the K X-ray intensity ratio I(K{sub {beta}})/I(K{sub {alpha}}) for the 17 elements Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Rb, Sr, Y, Zr, Nb and Mo have been done following ionization by 59.5keV {gamma}-rays from a {sup 241}Am point source. Ratios of emission probabilities of Auger electrons and the vacancy transfer coefficients have been extracted in terms of the intensity ratios. It is found that the present results agree well with earlier fitted values and the semi-empirical values.
2006-01-15
International Nuclear Information System (INIS)
Concentration profiles of passive films formed on electrolytically anodized niobium and niobium-base alloys are obtained by Auger Electron Spectroscopy with simultaneous ion beam etching. The alloys investigated include 5Zr-Nb, 3Zr-10Ti-Nb, 2.5Zr-2W-Nb, and 1Zr-5Mo-5V-Nb. Experiments demonstrate that AES is among the most fascinating techniques for solving various characterization problems related to the structure and composition of the thin films formed by anodization. Data presented supports evidence that combined anodic and cathodic movements take place during film growth. 11 figures.
1976-01-01
Polycrystalline powders of Na{sub 2x}Mn{sub 1-x}PS{sub 3} have been synthesized from layered MnPS{sub 3} material by successive ion-exchange intercalation of potassium and sodium ions. Their x-ray photoelectron spectroscopy (XPS) and x-ray excited Auger spectroscopy spectra have been measured at room temperature using Mg K{alpha} (1253.6 eV) x-ray source. In particular, the Mn, P, and S 2p and Na 1s and 2p core-level regions and the Na Auger KL{sub 23}L{sub 23} transition have been investigated. All the analyzed XPS core-level spectra display a single-peak structure, suggesting the absence of nonequivalent atoms of Na, Mn, P, and S. The manganese XPS spectrum shows, as observed in MnPS{sub 3} and in its cesium and potassium intercalation compounds, typical shake-up satellites, suggesting that the Mn-S bond is yet mainly ionic in nature. The comparison with the XPS spectra relative to MnPS{sub 3} and its potassium intercalation compound (K{sub ...
2008-12-15
Theory of bistability in the face-pumped laser with bimolecular recombination
Steady-state and transient behavior of the longitudinally pumped semiconductor laser is theoretically investigated by using a rate-equation model with distributed gain and photon density. Conditions necessary for bistable operation are derived. Dependencies of such major switching characteristics as turn-on and turn-off powers, delay, and rise times on laser parameters are examined. Influences of spontaneous radiation, impurities, and Auger recombination are studied. The results offer an explanation for the observed nonlinear behavior of face-pumped lasers.
1987-01-01
Experimental investigation of the KLL Auger spectrum of "8"8Sr from the EC-decay of "8"8Y
International Nuclear Information System (INIS)
According to the calculations, intensity of the KL_1L_2("3P_0) Auger transition should drastically increase with increasing atomic number Z due to the relativistic effects. However, this behavior was experimentally proved only for very few elements. A lack of enough precise experimental data in the atomic number region Z<45 does not enable one to distinguish between relativistic and non-relativistic approaches in this region. Thus for Z=38 the KL_1L_2("3P_0/"1P_1) intensity ratio was determined with relative uncertainty of 63 % in the only measurement with external excitation. Here we present results of our investigation of the KLL Auger electron spectrum of "8"8Sr generated in the EC decay of "8"8Y (T_1_/_2= 106.6 d). Electron spectra were measured with the 11 eV instrumental resolution using a combined electrostatic spectrometer. The present value of the KL_2L_3("1D_2) absolute transition energy in Sr is higher by 7.4 eV (i.e. more than ...
2007-06-04
Applications of Auger spectroscopy and ESCA to the study of thin films formed on metals
International Nuclear Information System (INIS)
Various examples of applications of these two techniques are described. A part of them are related to the analysis of adsorbed layers formed during gaz-metal interactions. The others are concerned with the analysis of passive films formed during dry and wet corrosion. Problems related to the calibration of these techniques are discussed.
1979-05-23
5f-electron localization in uranium compounds
International Nuclear Information System (INIS)
Observed 7-eV satellites in the XPS spectra of UGa_2 and other B-group compounds are shown to be due to two-hole final states as confirmed by existing Auger data. The presence of these satellites is an indication for a weak fd hybridization and, when compared to uranium--transition-metal compounds, increased 5f localization.
Simplified methods in the estimation of the K-value of insulated cargo holds on ships
Energy Technology Data Exchange (ETDEWEB)
The problem of buried steelwork in cargo hold insulation has been investigated by several using empirical methods. These efforts have resulted in correction factors that serve as a useful aid in the complex task of estimating the K-value of a ship`s cargo holds for the correct dimensioning of the refrigeration plant. Today, the advent of the digital computer has established numerical methods of analysis as a common working tool among practicing engineers. For estimating the flow in cases of buried steelwork that cannot be handled by correction factors, this is an effective approach. This study is an analytical/numerical investigation of the effect that buried steelworks have on the heat leakage across cargo hold walls. It aims at providing enlightenment on the physical significance of the parameters influencing the problem and developing practically simple methods for predicting the heat leakage across the hold walls. The study is set in the steady temperature in a rectangular layer of ...
1992-03-01
Energy Technology Data Exchange (ETDEWEB)
We report the results of ab initio calculations of cross sections and molecular-frame photoelectron angular distributions for C 1s ionization of CO2, and propose a mechanism for the recently observed asymmetry of those angular distributions with respect to the CO^+and O^+ions produced by subsequent Auger decay. The fixed-nuclei, photoionization amplitudes were constructed using variationally obtained electron-molecular ion scattering wave functions. We have also carried out electronic structure calculations which identify a dissociative state of the CO2^++ dication that is likely populated following Auger decay and which leads to O^+ + CO^+ fragment ions. We show that a proper accounting of vibrational motion in the computation of the photoelectron angular distributions, along with reasonable assumptions about the nuclear dissociation dynamics, gives results in good agreement with recent experimental observations. We also demonstrate that ...
2009-02-18
How epitaxial are Pd/sub 2/Si-Si interfaces
Energy Technology Data Exchange (ETDEWEB)
Pd/sub 2/Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd/sub 2/Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium-to-silicon ratios, primarily because of probe broadening and X-ray-induced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd/sub 2/Si interface. Electrical measurements of the ideality factor for Schottky barriers made from the materials produced higher values for the rougher evaporation-formed interfaces ...
1983-06-17
Silicidation in Pd/Si thin film junction-Defect evolution and silicon surface segregation
Energy Technology Data Exchange (ETDEWEB)
Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.
2007-09-25
Radiation effect on optical, electrophysical and surface properties of GaAlAs heterostructures
Energy Technology Data Exchange (ETDEWEB)
A study was made on the effect of 3.5 MeV electron irradiation on the properties of light-emissive structure based on GaAlAs. It is shown that a considerable decrease in the emitted light intensity as a result of electron irradiation not accompanied by changes in recombination- and electric properties of the mentioned structures. It is established by the electron-microscopy and Auger-spectroscopy meazurements that electron irradiation causes the occurrence of regions of free aluminium clusters on the external surface of the structure n-layer. The number and the sizes of the regions depend on the electron doze. It was assumed that the mentioned regions can play a role of attenuation filter for the light emitted by the structure.
1984-07-01
Coincidence measurements of M-shell excitation in slow Xe-Xe collisions
Energy Technology Data Exchange (ETDEWEB)
Ion-photon and ion-Auger-electron coincidence measurements have been performed to study the impact parameter dependence of Xe M-shell excitation in 1.05 MeV Xe/sup 3 +/-Xe collisions. The experimental results are found to be consistent with the prediction of the molecular orbital model of atomic collisions. The average fluorescence yield for the Xe M shell is found to be strongly dependent on the impact parameter. This is ascribed to the production of highly charged Xe ions in close collisions.
1982-07-14
Tantalum nitride as a diffusion barrier between Pd_2Si or CoSi_2 and aluminum
International Nuclear Information System (INIS)
Reactively sputtered tantalum nitride (Ta_2N) has been investigated as a diffusion barrier between Pd_2Si and aluminum and CoSi_2 and Al. Ta_2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 "0C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd_2Si/Ta_2N/Al were excellent and showed no deterioration after annealing at 500 "0C. However, similar devices with CoSi_2 contacts and Ta_2N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.
Tantalum nitride as a diffusion barrier between Pd/sub 2/Si or CoSi/sub 2/ and aluminum
Energy Technology Data Exchange (ETDEWEB)
Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.
1989-04-15
Energy Technology Data Exchange (ETDEWEB)
Passive films formed on stainless steels in a borate buffer solution (pH 9.2) have been investigated by capacitance measurements and photoelectrochemistry. The study was carried out on films formed on AISI type 304 and 316 stainless steels and high purity alloys with differing chromium, nickel, and molybdenum contents. Complementary research by Auger analysis shows that the passive films are composed essentially of an inner chromium region in contact with the metallic substrate and an outer iron oxide region developed at the film/electrolyte interface. The semiconducting properties of the passive films are determined by those of the constituent chromium and iron oxides which are of p-type and n-type, respectively. Thus the influence of the alloying elements on the semiconducting properties of the passive films is explained by changes in the electronic structure of each of these two oxide regions.
1998-11-01
Properties of the passive films formed on ferritic stainless steels in Cl/sup -/ Solutions
Energy Technology Data Exchange (ETDEWEB)
The pitting resistance of Fe-Cr and Fe-Cr-Mo alloys has been correlated with characteristics of the passive films analyzed by Auger electron spectroscopy (AES). Increased film protectiveness as a result of increased Cr in the alloy can be directly attributed to Cr enrichment of the film and decreased film thickness. Increased Mo in the alloy or passivation at noble potentials promotes passive film resistance to breakdown, but neither does much to change the macrocharacteristics of the film. Rather, it is suggested that the roles of alloying and/or passivation conditions are related to the susceptibility and distribution of weak points of the film. In solutions in which pitting occurs, chloride is generally not incorporated into the film, suggesting that the role of halides is to interact with weak points of the film at the solution/film interface. At 260/sup 0/C, the films are much thicker and likely to be much more defective in structure than those formed at ...
1986-10-01
Energy Technology Data Exchange (ETDEWEB)
Thin passive layers of uranium nitride were formed by nitriding pure metallic uranium in non-equilibrium, low pressure radio-frequency plasma of nitrogen. Plasma nitriding at low substrate temperature of 230 C-250 C was found to cause the formation of adherent layers of uranium sesquinitride ({alpha}-U{sub 2}N{sub 3}) which provide a considerable protection against hydrogen attack. The characteristics of these passivation layers were determined by X-ray diffraction and Auger electron spectroscopy. The incipient hydriding kinetics of the plasma-treated samples were compared with those of untreated and nitrogen-ion implantation ones, utilizing a hot-stage microscope that was monitored continuously with a TV camera and videotape. (orig.)
1996-07-01
Lowering the activation temperature of TiZrV non-evaporable getter films [for LHC
In order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless-steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger electron spectroscopy during specific in situ thermal cycles. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy and the morphology (crystal structure and size of the crystallites) has been investigated by X-ray diffraction. The criteria indicating the sample quality and its dependence on film structure and chemical composition are presented and discussed. (13 refs).
2001-01-01
Low energy ion scattering study of palladium films on silicon(111)-7 x 7 surfaces
Energy Technology Data Exchange (ETDEWEB)
The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd/sub 2/Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-..sqrt..3x..sqrt..3R30/sup 0/, the feature being similar to the cases of Ag, Au/Si(111) systems.
1983-12-15
Low energy ion scattering study of palladium films on silicon(111)-7 x 7 surfaces
International Nuclear Information System (INIS)
The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd_2Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-#sq root#3x#sq root#3R30"0, the feature being similar to the cases of Ag, Au/Si(111) systems. (orig.).
LDEF impact craters formed by carbon-rich impactors
International Nuclear Information System (INIS)
Two small craters (number 74, 119 microns, and number 31, 158 microns in diameter) with depth to diameter ratios of about 0.59 and 0.8, respectively, were found in Al from the Long Duration Exposure Facility (LDEF) experiment tray A11EOOF. Both craters have residues concentrated in the crater bottoms, along the walls, and on top of the overturned rims. Low voltage scanning electron electron microscopy, Auger electron spectroscopy, time of flight secondary ion mass spectroscopy and energy dispersive x-ray spectroscopy were used to obtain high resolution imagery and elemental analysis. Analyses indicate that the impactor for both craters was carbon-rich, as the residues contain mostly C. Silicon, S, and F in low concentrations are present on the Al surface away from the craters and may be, in part, contaminants.
1991-06-01
Investigation of weld cracking in alloy 800
Energy Technology Data Exchange (ETDEWEB)
The subscale Varestraint test has been used to determine the relative hot cracking susceptibility of the fusion zone in four commercial heats of alloy 800. Although all four heats were susceptible to cracking, one heat exhibited a significant increase in cracking relative to the other three. Optical metallography revealed that nearly all the cracking was localized along fusion zone grain boundaries. Microprobe analysis of the grain boundaries detected high concentrations of titanium, silicon, and niobium resulting from partitioning during solidification. The fusion zone hot cracking mechanism in alloy 800 involves the complex interaction of titanium, silicon, niobium, and carbon along the solidification boundaries. SEM and Auger analyses of the hot crack fracture surfaces revealed the presence of (Ti, Nb)-rich carbides, suggesting that these particles precipitate from the liquid which solidifies last on the fracture surface. 23 references.
1984-03-01
Interface-induced conversion of infrared to visible light at semiconductor interfaces
International Nuclear Information System (INIS)
Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.
Interactions at the cofired interface of Ag/Pd electrode and lead-based ferroelectrics
Energy Technology Data Exchange (ETDEWEB)
In the present study, element interdiffusions at the cofired interface of 9/1 Ag/Pd electrode and lead magnesium niobate (PMN)-based ferroelectrics were investigated using Auger Electron Spectroscopy (AES). Intense interdiffusions at the interface were observed while Ag and Pd could penetrate into the ceramics for about 1 {mu}m. Ag-doping experiments were carried out to further study the effects of Ag diffusion on electrical properties of the ceramics. The results showed that Ag could be incorporated into solid solution of the ceramics as Ag{sup +}. As a whole, the Curie temperature (Tc) and dielectric constant of the ceramics decreased with Ag addition. However, Ag addition had no obvious effect on the insulation resistivity. The results inferred that Ag{sup +} could substitute for Pb{sup 2+} at A site of ABO{sub 3} lattice, thereby oxygen vacancies were generated.
2003-05-25
Energy Technology Data Exchange (ETDEWEB)
Passive films formed on Alloy 690 in different pH solutions at high temperatures were studied by potentiodynamic polarization, Auger electron spectroscopy, thermodynamic diagrams and the Mott-Schottky relation. The chemical compositions and electronic structures of the passive films were found to be strongly pH-dependent. In alkaline solutions, a secondary passivation was clearly observed on potentiodynamic polarization curves. The passive films were a mixture of Cr{sub 2}O{sub 3} and FeCr{sub 2}O{sub 4} below the flat band potential of nickel oxide and were NiFe{sub 2}O{sub 4} above this potential. Electronic structure models, describing the electrochemical properties of the passive films, are proposed and discussed.
2009-12-15
International Nuclear Information System (INIS)
Passive films formed on Alloy 690 in different pH solutions at high temperatures were studied by potentiodynamic polarization, Auger electron spectroscopy, thermodynamic diagrams and the Mott-Schottky relation. The chemical compositions and electronic structures of the passive films were found to be strongly pH-dependent. In alkaline solutions, a secondary passivation was clearly observed on potentiodynamic polarization curves. The passive films were a mixture of Cr2O3 and FeCr2O4 below the flat band potential of nickel oxide and were NiFe2O4 above this potential. Electronic structure models, describing the electrochemical properties of the passive films, are proposed and discussed.
2009-12-01
Energy Technology Data Exchange (ETDEWEB)
An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.
1985-01-15
Formation conditions, chloride content, and stability of passive films on an iron-chromium alloy
Energy Technology Data Exchange (ETDEWEB)
Passive films were formed on a high purity Fe-23 Cr alloy in acid sulfate solutions in the presence and absence of chloride ion. The resulting film composition was investigated by Auger depth profiling. The passivated samples were exposed to a 1M NaCl solution at a constant potential slightly above the critical pitting potential, and the current-time transient was measured in order to compare the relative stability of the different films. The results obtained suggest that the formation conditions influence the chloride content of the passive film and the breakdown behavior. Passive films formed in the presence of chloride contain and are slightly less stable towards breakdown. No chloride was found in films formed in sulfate and subsequently exposed to chloride well below the pitting potential.
1993-07-01
Electrochemical deposition of indium sulfide thin films using two-step pulse biasing
British Library Electronic Table of Contents (United Kingdom)
Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.
2008-01-01
Effect of preparative treatment on the corrosion resistance of duplex stainless steel
International Nuclear Information System (INIS)
The effect of surface treatment on the characteristics of the passive film on a super duplex stainless steel is addressed. Auger Electron Spectroscopy (AES) has been used to provide in-depth chemical profile analyses of the passivation film. This study showed that the constitution of the film is largely dependent on the electrolytic conditions under which it is produced or to which it is submitted. The passive films formed by polarisation in an alkaline solution (boric-borate solution) consist of two regions, an inner region rich in chromium and an outer region rich in iron, whilst the films produced in acid solution only present the chromium - rich region. The film thickness is also greatly affected by the polarisation conditions. It can vary from ca. 8 monolayers to about 20 monolayers for cathodically and anodically polarised specimens respectively. The microstructure of weldmetal is also discussed. (author)
1999-09-01
Energy Technology Data Exchange (ETDEWEB)
The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.) 30 refs.
1998-12-31
International Nuclear Information System (INIS)
The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.)
1997-08-25
Dielectronic recombination into excited levels of Ne-like titanium from F-like low-lying states
International Nuclear Information System (INIS)
The energy levels, wavelengths, oscillator strengths, Auger rates and level-to-level dielectronic recombination rate coefficients describing dielectronic recombination into excited levels of Ne-like titanium from F-like low-lying states are calculated. Our calculations are based on Dr. R.D. Cowan's semi-relativistic mass-velocity and Darwin corrections are included in the Hamiltonian, and the distorted-wave model is used for the calculation of free electron wavefunctions. In order to set the recombination rate coefficients on a level by level basis, in a manner compatible with detailed level population kinetics modelling of highly-stripped ions in plasma, the dielectronic recombination rate coefficients as a function of free electron temperatures are given in an analytical form, which is not only very convenient in practice, but also hopefully accurate compared with the exactly calculated numerical results. (orig.).
1993-01-01
Chemical composition of passive films on AISI 304 stainless steel
Energy Technology Data Exchange (ETDEWEB)
Chemical characterization of passive films formed on AISI 304 austenitic stainless steel, in a borate/boric acid solution at pH 9.2, under various conditions of potential, temperature, and polarizations time, was made by Auger electron spectroscopy combined with ion sputtering, and x-ray photoelectron spectroscopy (XPS). The depth chemical composition, thickness, and duplex character of the passive layers were determined after processing AES sputter profiles by their quantitative approach based on the sequential layer sputtering model. Moreover, separated contributions of elements in their oxidized and unoxidized state could be disclosed from part to part of the oxide-alloy interface. The XPS study specified the chemical bondings which take placed inside the film, between Fe and oxygen (and water).
1994-12-01
Energy Technology Data Exchange (ETDEWEB)
The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.
2008-03-15
International Nuclear Information System (INIS)
The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.
2008-03-01
Characterizations of passive films formed on stainless steel in high temperature water
International Nuclear Information System (INIS)
Surface study techniques were used to investigate films on Type 304 stainless steel which were formed during exposure to high purity water at 288"0C. The results indicated that the film chemistry depended strongly upon the concentration of the dissolved O_2 in the water. Films formed in water having 8 ppm O_2 were stoichiometric mixed oxides; whereas those formed in water with 10 ppb O_2 were highly defective oxyhydroxides. The latter films are not as protective as the stoichiometric oxides. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to investigate the films. (Auth.).
1983-06-03
A study of the photoionisation dynamics of chloromethane and iodomethane
International Nuclear Information System (INIS)
Angle resolved valence shell photoelectron spectra of chloromethane and iodomethane have been recorded using synchrotron radiation in the photon energy range 14-120eV. These have allowed photoelectron angular distributions and branching ratios to be determined not only for the main bands associated with the single-hole states but also for the satellite structure due to many-electron effects. The continuum multiple scattering approach has been used to calculate photoelectron asymmetry parameters and branching ratios for the valence orbitals of CH_3Cl and CH_3I, and also for the I 4d subshell. A comparison between the experimental data and the theoretical predictions has enabled the influence of Cooper minima, shape resonances and intershell coupling to be assessed. The asymmetry parameters and branching ratio for the spin-orbit split components of the CH_3I"+X-bar "2E state have been measured and exhibit a spectral behaviour almost identical to that of the corresponding data for the Xe ...
2006-08-01
Energy Technology Data Exchange (ETDEWEB)
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO{sub 2}-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also decreases the doping density in the case of ...
2006-12-05
International Nuclear Information System (INIS)
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO_2-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also decreases the doping density in the case of the ...
2006-12-05
Energy Technology Data Exchange (ETDEWEB)
The present work describes the surface improvement and biocompatibility of TiAl{sub 24}Nb{sub 10} intermetallic alloy using rf plasma nitriding. The nitriding process was carried out at different plasma power from 400 W to 650 W where the other plasma conditions were fixed. Grazing incidence X-ray diffractometry (GIXRD), Auger electron spectroscopy (AES), tribometer and a nanohardness tester were employed to characterize the nitrided layer. Further potentiodynamic polarization method was used to describe the corrosion behavior of the un-nitrided and nitrided alloy. It has been found that the Vickers hardness (HV) and corrosion resistance values of the nitrided layers increase with increasing plasma power while the wear rates of the nitrided layers reduce by two orders of magnitude as compared to those of the un-nitrided layer. This improvement in surface properties of the intermetallic alloy is due to formation of a thin modified layer which is composed of titanium ...
2007-09-30
International Nuclear Information System (INIS)
The present work describes the surface improvement and biocompatibility of TiAl_2_4Nb_1_0 intermetallic alloy using rf plasma nitriding. The nitriding process was carried out at different plasma power from 400 W to 650 W where the other plasma conditions were fixed. Grazing incidence X-ray diffractometry (GIXRD), Auger electron spectroscopy (AES), tribometer and a nanohardness tester were employed to characterize the nitrided layer. Further potentiodynamic polarization method was used to describe the corrosion behavior of the un-nitrided and nitrided alloy. It has been found that the Vickers hardness (HV) and corrosion resistance values of the nitrided layers increase with increasing plasma power while the wear rates of the nitrided layers reduce by two orders of magnitude as compared to those of the un-nitrided layer. This improvement in surface properties of the intermetallic alloy is due to formation of a thin modified layer which is composed of titanium nitride ...
2007-09-30
Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy
Energy Technology Data Exchange (ETDEWEB)
Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly developed inductively coupled RF plasma source ...
1997-09-01
Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy
International Nuclear Information System (INIS)
Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly developed inductively coupled RF plasma source ...
1996-09-15
Radiations emitted in the decay of /sup 165/Er: A promising medical radionuclide
The 10.3-h /sup 165/Er, decaying by electron capture to stable /sup 165/Ho, offers an excellent promise for use in diagnostic nuclear medicine, especially in conjuction with multiwire proportional-counter cameras. Using an ultra-high-resolution Si(Li) photon spectrometer, L and K x-ray photon yields in /sup 165/Er decay have been measured. The ratio P/sub L//P/sub K/ of electron-capture probabilities in L and K shells is determined to be 0.196 +- 0.030, in good agreement with theory. Estimates of Auger electron yields and yields of very-low-energy electrons from Coster--Kronig transitions are presented. Levels of /sup 169/Er and /sup 171/Er radioactive impurities in the reactor-produced /sup 165/Er sample are experimentally determined. Whole-body dose estimates for /sup 165/Er are given. These compare favorably with /sup 99/Tc dose.
1977-05-01
Radiations emitted in the decay of "1"6"5Er: A promising medical radionuclide
International Nuclear Information System (INIS)
The 10.3-h "1"6"5Er, decaying by electron capture to stable "1"6"5Ho, offers an excellent promise for use in diagnostic nuclear medicine, especially in conjuction with multiwire proportional-counter cameras. Using an ultra-high-resolution Si(Li) photon spectrometer, L and K x-ray photon yields in "1"6"5Er decay have been measured. The ratio P/sub L//P/sub K/ of electron-capture probabilities in L and K shells is determined to be 0.196 +- 0.030, in good agreement with theory. Estimates of Auger electron yields and yields of very-low-energy electrons from Coster--Kronig transitions are presented. Levels of "1"6"9Er and "1"7"1Er radioactive impurities in the reactor-produced "1"6"5Er sample are experimentally determined. Whole-body dose estimates for "1"6"5Er are given. These compare favorably with "9"9Tc dose.
Radiation-induced segregation in light-ion bombarded Ni-8% Si
Energy Technology Data Exchange (ETDEWEB)
Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no noticeable depletion zone and a more gradual fall-off compared to the profiles from ...
1986-01-01
Energy Technology Data Exchange (ETDEWEB)
As a parameter for execution control of confirming a bearing stratum, which is most important in a bored precast pile method, discussions were made on the relativity between the product AT'' of a load current value A'' in an electric motor driving an auger used to drill pit holes with an excavation time T'' and a value N,'' a result of the standard penetration test of the ground. As a result, although the relativity of the N'' value has some variance in the ground of diluvial clay, they correspond well to each other in other kinds of ground. In pile bearing strata in particular, they correspond very well to each other regardless of soil textures of the ground, proving clearly that the AT'' value can be used as an effective parameter for confirmation of and penetration into the bearing stratum. Therefore, tips of all the piles used in one construction site can ...
1991-07-25
Passivation behavior of SUS 304 stainless steel in neutral solutions at elevated temperature
International Nuclear Information System (INIS)
Cyclic voltammograms of SUS 304 stainless steel in various neutral solutions such as Na_2SO_4 at high temperature were measured, as a successive study to previous report in which effects of temperature and pH on polarization behavior of stainless steel were studied. In this measurement Ag/AgCl reference electrode and platinum counter electrode were used in a static autoclave lined with inconel. Passive films formed in various conditions were analysed by electron diffraction and Auger spectroscopy. Results obtained were compared with anodic behavior of iron, chromium and nickel and with thermodynamical stabilities of their compounds. The main results are summarized as follows. (1) Stainless steel shows such electrochemical behavior as active dissolution, passivation and transpassivation in a deaerated neutral solution at 250"0C after fully reductive treatment of the specimen. In air-saturated solution, the peak of active dissolution is not observed. In the passive ...
1981-01-01
Oxide growth on aluminium alloys in the presence of ammonium fluoborate
Energy Technology Data Exchange (ETDEWEB)
The aim of this study as to determine the mechanisms involved in using ammonium fluoborate as a reducing atmosphere when preheating a high magnesium content aluminium alloy. Rutherford Backscattering (RBS) has been the major technique used in the analysis of samples, it revealed significant reduction in both the diffusion of magnesium to the surface and the calculated oxide thickness in the presence of NH{sub 4}BF{sub 4}. At temperatures above 500 deg C in air, SEM images revealed depressions and voids due to incipient melting at various stages, around the grain boundaries. Grain boundaries effectively acted as pipes aiding the diffusion of magnesium to the surface. These results have been verified through compositional analysis with both RBS and auger electron spectroscopy (AES). Results from NH{sub 4}BF{sub 4} atmosphere preheat conditions showed significant improvements. It was verified experimentally that above 500 deg C , AA5182 alloys undergo incipient ...
1996-12-31
Interface-induced conversion of infrared to visible light at semiconductor interfaces
Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}
1996-08-01
Energy Technology Data Exchange (ETDEWEB)
In the present paper, the chemical composition of passive films formed on both phases of two types of duplex stainless steels (UNS S31803 and UNS S32304) is determined at the micro-scale using Auger electron spectroscopy (AES). Samples were either mechanically polished (down to diamond pastes) or electrochemically etched in acidic solutions. The micro-electrochemical behavior of samples was then determined in sodium chloride media by means of the electrochemical micro-cell technique (capillary diameters of 30 {mu}m). The results obtained were analyzed considering the passive film chemical composition. Quantitative relationships between electrochemical parameters and the distribution of chromium and iron in the oxide layer were found. Due to differences in mechanical properties between ferrite and austenite, a heterogeneous stress distribution is generated in both phases. A method based on thermal-mechanical simulation was used to quantify surface stress gradients ...
2010-09-30
International Nuclear Information System (INIS)
In the present paper, the chemical composition of passive films formed on both phases of two types of duplex stainless steels (UNS S31803 and UNS S32304) is determined at the micro-scale using Auger electron spectroscopy (AES). Samples were either mechanically polished (down to diamond pastes) or electrochemically etched in acidic solutions. The micro-electrochemical behavior of samples was then determined in sodium chloride media by means of the electrochemical micro-cell technique (capillary diameters of 30 ?m). The results obtained were analyzed considering the passive film chemical composition. Quantitative relationships between electrochemical parameters and the distribution of chromium and iron in the oxide layer were found. Due to differences in mechanical properties between ferrite and austenite, a heterogeneous stress distribution is generated in both phases. A method based on thermal-mechanical simulation was used to quantify surface stress gradients and ...
2010-09-30
International Nuclear Information System (INIS)
The influence of some processing factors such as cold work and heat treatment on the susceptibility to caustic stress corrosion cracking (SCC) of modified alloy 800, referred to alloy 800 M, in a boiling solution of 50%NaOH + 0.3%SiO_2+0.3%Na_2S_2O_3 was investigated by means of microstructure examination, tensile test, stress analysis, SCC test of C-rings, Auger electron spectroscopy (AES) and corrosion mode. Cold work led to lengthening of grains, decrease in ductility, increase in strength, residential stress and susceptibility to SCC. With increasing temperature of heat treatment on alloy 800 M after cold work, grains became bigger, ductility increased but strength, residential stress and susceptibility to SCC decreased. SCC cracks on C-ring specimens initiated from pitting and propagated along grain boundaries. AES analysis indicates that the surface films on alloy 800M are enriched in nickel and depleted in iron and chromium. (authors)
2005-07-01
Energy Technology Data Exchange (ETDEWEB)
Chromium electroplated AISI 316L stainless steel was nitrided using inductively coupled plasma (ICP) for application in the bipolar plate of a polymer electrolyte membrane fuel cell (PEMFC). A continuous and thin chromium nitride layer was formed at the surface of the samples after ICP nitriding for 2 h at 400 C. The interfacial contact resistance (ICR) and corrosion resistance in simulated PEMFC operating conditions were higher than the required values, while they varied with the applied dc bias voltage during the nitriding process. The ICR value decreased with an increase in bias voltage. Potentiodynamic polarization measurements showed that all of the nitrided samples had excellent corrosion resistance with a current density of {proportional_to}10{sup -7} A cm{sup -2} at the cathode. It was also found that the oxygen content at the surface was not increased after the corrosion test. X-ray diffractometry (XRD), field emission scanning electron microscopy (FE-SEM), and ...
2009-03-15
Energy Technology Data Exchange (ETDEWEB)
Alloy 800 is an austenitic Fe-Ni-Cr steel containing relatively minor but important amounts of carbon, aluminium and titanium. Special grades of alloy 800 known as 800H, 800HT and 800LC differ in the concentrations of these elements. In addition to these industrial specifications, further melts were prepared containing phosphorous or sulphur. Using a radioactive tracer method the bulk and grain-boundary diffusion of {sup 59}Fe was investigated in these alloys in the temperature range 800 to 1000 C. For evaluation of the diffusion profiles the approximation of Suzuoka was used, which considers the depletion of the tracer on the surface. By autoradiography it was confirmed that such depletion occurs. In alloy 800H the activation energy of grain-boundary diffusion of {sup 59}Fe was found to be (209{+-}17) kJ/mol; dissolved elements, especially phosphorous, increase the activation energy. The same materials - aged at 800 C for 100 h - were used for creep experiments at 800 C under constant ...
1999-10-01
International Nuclear Information System (INIS)
Alloy 800 is an austenitic Fe-Ni-Cr steel containing relatively minor but important amounts of carbon, aluminium and titanium. Special grades of alloy 800 known as 800H, 800HT and 800LC differ in the concentrations of these elements. In addition to these industrial specifications, further melts were prepared containing phosphorous or sulphur. Using a radioactive tracer method the bulk and grain-boundary diffusion of "5"9Fe was investigated in these alloys in the temperature range 800 to 1000 C. For evaluation of the diffusion profiles the approximation of Suzuoka was used, which considers the depletion of the tracer on the surface. By autoradiography it was confirmed that such depletion occurs. In alloy 800H the activation energy of grain-boundary diffusion of "5"9Fe was found to be (209#+-#17) kJ/mol; dissolved elements, especially phosphorous, increase the activation energy. The same materials - aged at 800 C for 100 h - were used for creep experiments at 800 C under constant load. ...
Grain boundary self-diffusion of alloy 800 as affected by sulphur, phosphorous and carbon
Energy Technology Data Exchange (ETDEWEB)
Using a radioactive tracer method the bulk and grain boundary diffusion of {sup 59}Fe was determined in industrial alloy 800 and melts of alloy 800 with additional P and S in the temperature range 800 to 1000 C. The use of the approximation of Suzuoka was confirmed by autoradiographs. In alloy 800 H the activation energy of grain boundary diffusion of {sup 59}Fe is (209 {+-} 17)kJ/mol. Dissolved elements especially P increase the activation energy of the grain boundary diffusion of Fe by their segregation to the grain boundaries. In addition the influence of the grain boundary diffusion on the growth of creep cavities was investigated in the same materials, and the chemical composition of the creep cavities and grain boundaries were analysed by Auger electron spectroscopy (AES). For alloy 800 + 0.088 wt-%P an enrichment of about 14 at-%P was observed at the grain boundaries. The addition of P clearly enhances the creep strength of alloy 800; this can probably be ...
1999-08-01
Grain boundary self-diffusion of alloy 800 as affected by sulphur, phosphorous and carbon
International Nuclear Information System (INIS)
Using a radioactive tracer method the bulk and grain boundary diffusion of "5"9Fe was determined in industrial alloy 800 and melts of alloy 800 with additional P and S in the temperature range 800 to 1000 C. The use of the approximation of Suzuoka was confirmed by autoradiographs. In alloy 800 H the activation energy of grain boundary diffusion of "5"9Fe is (209 #+-# 17)kJ/mol. Dissolved elements especially P increase the activation energy of the grain boundary diffusion of Fe by their segregation to the grain boundaries. In addition the influence of the grain boundary diffusion on the growth of creep cavities was investigated in the same materials, and the chemical composition of the creep cavities and grain boundaries were analysed by Auger electron spectroscopy (AES). For alloy 800 + 0.088 wt-%P an enrichment of about 14 at-%P was observed at the grain boundaries. The addition of P clearly enhances the creep strength of alloy 800; this can probably be explained ...
1998-07-06
Fabrication of nanometer structures by means of a fine-focused ion beam
International Nuclear Information System (INIS)
Focused Ion Beams are an important approach for nanostructure fabrication in the semiconductor industry and material sciences. Applications in sputtering and ion induced deposition of materials are investigated. The IMSA FIB system equipped with the high resolution Orsay Physics CANION M31plus ion column with current densities up to 10 A/cm"2 including a gas injection system is applied. In this work the ion beam induced chemical vapour deposition of tungsten, wherefore tungsten hexacarbonyl as precursor gas is used for a first investigation. Conductive tungsten-nanowires with smallest cross-section upon a substrate of Si and SiO_2 are produced. The ion beam parameters of this focused ion beam system are optimized for the metal deposition. A short insight in the theory of layer nucleation and growth induced by the ion beam during the metal deposition is given. The layer quality is determined by Auger electron analysis which shows the components in atomic percent ...
2000-03-01
Energy Technology Data Exchange (ETDEWEB)
The passive films formed on iron metal, alloys or stainless steel are extremely thin oxides or hydroxides and possess the properties of high chemical stability in the environment. These films show characteristics interested both electrical as well as electrochemical point of view due to the thin thickness of the films. Auger Electron Spectroscopy, X-ray Photoelectron spectroscopy and so on which are the conventional electrochemical measurement methods or the surface analysis methods are used for the analysis and evaluation of these films, however, at present, the application of research technique focusing the superconductor characteristics of the films are tried. Although, the potential modulation reflection spectroscopy method has merits like possibility of in-situ measurement, high precision, possibility of stable analysis even for extremely thin film and so forth, it has also demerits like difficulty to response the potential modulation of hydroxides and also ...
1995-09-20
Electron and ion beam effects in amorphous SiO_2 and Si_3N_4 films for electronic devices
International Nuclear Information System (INIS)
The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO_2, Si_3N_4 and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si_3N_4, but SiO_2 appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO_2 and Si_3N_4 films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films. (author).
1982-01-01
Energy Technology Data Exchange (ETDEWEB)
The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO/sub 2/, Si/sub 3/N/sub 4/ and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si/sub 3/N/sub 4/, but SiO/sub 2/ appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO/sub 2/ and Si/sub 3/N/sub 4/ films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films.
1982-10-01
Deuterium retention in titanium alloys exposed in PLT
International Nuclear Information System (INIS)
Specimen strips of pure alpha titanium and beta titanium alloy were exposed to a range of up to 46 deuterium plasma discharges in the Princeton Large Torus Tokamak (PLT) under simulated first wall conditions, and the amount of trapped deuterium in these specimens was measured, using carbon as a calibration standard for trapping. The Deuterium Nuclear Microprobe was used to study the total trapped deuterium and the deuterium depth distribution in the exposed materials before and after annealing at 373 and 423"0K. The Scanning Auger Microprobe was used to identify the effects of surface impurities on the deuterium distribution. Results indicate that about 20 to 40% of the incident deuterium was trapped by the surface and about 90% of the trapped deuterium remained in a 20A carbonaceous film deposited during plasma exposure. Annealing resulted in a gradual loss from the film. These results indicate the importance of impurity film formation which may play a dominating ...
1981-07-01
International Nuclear Information System (INIS)
The decay channels of the Ar 2s"-"1 and 2p"-"1 and Kr 3p"-"1 and 3d"-"1 electronic hole states have been investigated by means of photoelectron-photoion coincidence measurements following innershell ionization using synchrotron radiation. With the method of final ion-charge resolving electron spectroscopy it has become possible to disentangle different contributions to the electron spectrum and to determine the decay probabilities P(nl"-"1#->#n+) of the above-mentioned hole states (nl"-"1) to the final ionic charge states n+. A high correlation with threefold or even fourfold charged ions has been found in all cases. Possible decay routes, via cascade or direct double Auger processes, are discussed on the basis of energy-level schemes calculated with the Hartree-Fock method. Special emphasis is laid on the examination of the Kr 3p"-"1 decay process, where the two fine-structure components (j=1/2,3/2) exhibit noticeably different decay probabilities to Kr"3"+ and ...
2002-04-01
Chemistry and morphology of coal liquefaction. Quarterly report, January 1-March 30, 1981
In the course of observing by means of Auger spectroscopy graphite gasification reactions catalyzed by metals, it has been found that in the presence of hydrogen, nickel appears to diffuse from the surface into the bulk of the graphite. When potassium is deposited on graphite, it is volatilized above 400/sup 0/C. Surprisingly the production of methane and carbon dioxide from the reaction of graphite and steam was catalyzed by potassium at as low a temperature as 250/sup 0/C. It has been shown that literature on the alkylation of benzene with synthesis gas is erroneous and that the products reported are due to Lewis acid catalyzed cracking of benzene. A novel cobalt mediated, reversible cleavage of a vinyl-hydrogen bond has been discovered. All products from the thermal decomposition of tetralin have been identified. The stereochemistry of cis-1, 2 dihydrotetralin was determined. In the utilization of the water gas shift reaction as a reducing agent for model coal ...
1981-03-01
A study of corrosion resistance behavior for W + C dual implanted H13 steel
International Nuclear Information System (INIS)
The surface layer optimized in resistance of corrosion and wear has been obtained by W + C dual implantation on H13 steel. The electrochemical polarization measurements show that the peak current density I_D is increased and then saturated with increasing of voltage scanning loops. The I_D is 100 times smaller than that of H13 steel, and 2-3 times smaller than that of tungsten. Then influence of dual implantation order on corrosion resistance is also studied. The I_D for W_5C_8 implanted first with W is half of that for C_5W_5 implanted first with C. The corrosion resistance structure of the samples after corrosion is observed by SEM. The X-ray analysis indicates that the structure consists of disperse phases of WC, W_2C, FeW, Fe_2W, FeW_2C and iron carbides. It is shown from Auger analysis that the optimum complex layer for corrosion resistance consists of thin carbon film on surface, disperse phases of these metal compounds in middle and then iron carbides layer ...
The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be successful in preventing metallurgical interdiffusion, they may ...
1988-01-01
Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and compensated a-Si:H is ...
1981-08-01
Energy Technology Data Exchange (ETDEWEB)
Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 {omega}/cm up to the annealing temperature ...
2004-06-30
International Nuclear Information System (INIS)
Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi_2 layers with the low sheet resistance value as low as congruent with 4.4 #OMEGA#/cm up to the annealing temperature as high as 850 deg. C without the formation of other ...
2004-06-30
Passivation behavior of SUS 304 stainless steel in neutral solutions at elevated temperature
Energy Technology Data Exchange (ETDEWEB)
Cyclic voltammograms of SUS 304 stainless steel in various neutral solutions such as Na/sub 2/SO/sub 4/ at high temperature were measured, as a successive study to previous report in which effects of temperature and pH on polarization behavior of stainless steel were studied. In this measurement Ag/AgCl reference electrode and platinum counter electrode were used in a static autoclave lined with inconel. Passive films formed in various conditions were analysed by electron diffraction and Auger spectroscopy. Results obtained were compared with anodic behavior of iron, chromium and nickel and with thermodynamical stabilities of their compounds. The main results are summarized as follows. (1) Stainless steel shows such electrochemical behavior as active dissolution, passivation and transpassivation in a deaerated neutral solution at 250/sup 0/C after fully reductive treatment of the specimen. In air-saturated solution, the peak of active dissolution is not observed. ...
1981-03-01
Energy Technology Data Exchange (ETDEWEB)
Both the sign and magnitude of residual stress can vary with the thickness of sputter deposited films. The origins of this behavior are not well understood. In this work, the authors consider the correlation between the residual stress behavior and the depth dependence of impurities in thin (2.5 nm--150 nm) sputtered Mo and Ta films. They also consider the effects of phase transformations and microstructural changes on the stress behavior. Films were deposited onto Si substrates with native oxide. The residual stress observed in the Mo films varied from highly compressive at 2.5 nm film thickness to {approximately}0 at 10 nm thickness. Ta films also exhibited a high compressive stress, which relaxed from highly compressive to tensile between 10 nm and 50 nm film thickness. Impurities in the films may originate from the sputtering targets, the background gases, and the substrate surfaces. Auger Electron Spectroscopy (AES) results showed the presence of O and C ...
1997-05-01
International Nuclear Information System (INIS)
We describe a new apparatus that combines pulsed laser excitation in a molecular beam with surface-science methods for preparation of clean single-crystal surfaces and detection of adsorbates to enable state-selected studies of gas-surface reaction dynamics. Reactant molecules are prepared in specific vibrationally excited states via overtone pumping using tunable, narrow-band laser radiation. The collision-free environment of the molecular beam prevents relaxation of the prepared molecules before impact on the target surface and enables complete control over the collision energy and incidence angle. Chemisorption products are detected after a given deposition time by Auger electron spectroscopy. To achieve sufficient beam flux of state-selected reactant molecules for product detection by standard surface-science techniques, we use a high-intensity, short-pulse molecular-beam source matched to the low duty cycle of the pulsed lasers used in our experiments. We ...
2003-09-01
Modification of the passivity of iron based alloys through ion implantation
International Nuclear Information System (INIS)
As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 stainless. Electrochemical experiments were carried out to evaluate the effects of phosphorus and boron on general and localized ...
1764-01-01
Kinetics of Pd/sub 2/Si layer growth measured by an x-ray diffraction technique
An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd/sub 2/Si layers. Epitaxial Pd/sub 2/Si films were grown on Si(111) substrates over a temperature range of 160-222/sup 0/C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy E/sub a/ = 1.06 eV and prefactor k/sub 0/ = 7 x 10/sup -4/ cm/sup 2//s. The low value of E/sub a/ suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were detected at the Pd/sub ...
1986-05-15
Energy Technology Data Exchange (ETDEWEB)
Irradiation-assisted stress corrosion cracking (IASCC) of several types of BWR field components fabricated from solution-annealed austenitic stainless steels (SSs), including a core internal weld, were investigated by means of slow-strain-rate test (SSRT), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and field-emission-gun advanced analytical electron microscopy (FEG-AAEM). Based on the results of the tests and analyses, separate effects of neutron fluence, tensile properties, alloying elements and major impurities identified in the American Society for Testing and Materials (ASTM) specifications, minor impurities, water chemistry, and fabrication-related variables were determined. The results indicate strongly that minor impurities not specified by the ASTM-specifications play important roles, probably through a complex synergism with grain-boundary Cr depletion. These impurities, typically associated with steelmaking and component ...
1996-09-01
Energy Technology Data Exchange (ETDEWEB)
Copper tubes have been widely used for water supply and heat exchangers. In such systems copper tubes often suffer from type 1 pitting-corrosion. A mechanism, of the type I pitting-corrosion on copper tubing has been presented, but a initiation mechanism of the pitting corrosion is still unknown. In this paper we aimed to clarify the initiation mechanism of the pitting corrosion. Copper-tube specimens were immersed in a circulating solution. The solution had been used for heat exchangers at a Japanese factory where the water leakage occurred by the pitting corrosion on copper tubes. The solution contained tiny precipitates resulted from corrosion of galvanized steel pipe. During the immersion test changes in the surface state of a copper tube was analyzed by in situ RAMAN (in situ Raman Spectroscopy), SEM (Scanning Electron Microscope), EPMA (Electron Probe Microanalysis), AES (Auger Electron Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy). The pitting ...
1999-07-15
Energy Technology Data Exchange (ETDEWEB)
Martin Marietta Energy Systems, Inc. (Energy Systems) manages a closed hazardous waste disposal unit, Chestnut Ridge Security Pits (CRSP), in the form of two trenches and several auger-holes, located on top of the eastern portion of Chestnut Ridge at the Department of Energy (DOE) Oak Ridge Y-12 Plant in Tennessee. The groundwater monitoring system for the unit presently consists of a network of upgradient and downgradient monitor wells. To investigate the discharge of groundwater to springs and streams. An initial dye-tracer study was conducted during the driest part of 1990. The dye was detected at some of the monitoring sites, but verification was necessary due to the proximity of some sites to extraneous dye sources. A second dye-tracer was conducted during the wet weather season. The actual test commenced during the first week of February 1992 with a 4-week baseline monitoring period to determine the inherent variability of the emission spectra within the ...
1992-11-01
Energy Technology Data Exchange (ETDEWEB)
Martin Marietta Energy Systems, Inc. (Energy Systems) manages a closed hazardous waste disposal unit, Chestnut Ridge Security Pits (CRSP), in the form of two trenches and several auger-holes, located on top of the eastern portion of Chestnut Ridge at the Department of Energy (DOE) Oak Ridge Y-12 Plant in Tennessee. The groundwater monitoring system for the unit presently consists of a network of upgradient and downgradient monitor wells. To investigate the discharge of groundwater to springs and streams, Energy Systems, through Geraghty and Miller, Inc., conducted an initial dye-tracer study during the driest part of 1990. The dye was detected at some of the monitoring sites, but verification was necessary due to the proximity of some sites to extraneous dye sources. Based on the results of the initial study, Energy Systems recommended to the Tennessee Department of Environment and Conservation (TDEC) in the 1990 Groundwater Quality Assessment Report (GWQAR) (HSW ...
1992-11-01
Field test for treatment verification of an in-situ enhanced bioremediation study
Energy Technology Data Exchange (ETDEWEB)
Due to a leakage from a 12-inch pressurized diesel steel pipe four years ago, an area of approximately 30,000 square meters was contaminated. A pilot study applying the technology of in-situ enhanced bioremediation was conducted. In the study, a field test kit and on-site monitoring equipment were applied for site characterization and treatment verification. Physically, the enhanced bioremediation study consisted of an air extraction and air supply system, and a nutrition supply network. Certain consistent sampling methodology was employed. Progress was verified by daily monitoring and monthly verification. The objective of this study was to evaluate the capabilities of indigenous microorganisms to biodegrade the petroleum hydrocarbons with provision of oxygen and nutrients. Nine extraction wells and eight air sparging wells were installed. The air sparging wells injected the air into geoformation and the extraction wells provided the underground air circulation. The soil samples were ...
1995-09-01
International Nuclear Information System (INIS)
This report summarizes work performed by Argonne National Laboratory (ANL) on fatigue and environmentally assisted cracking (EAC) in light water reactors (LWRs) during the six months from October 1993 to March 1994. EAC and fatigue of piping, pressure vessels, and core components in LWRs are important concerns in operating plants and as extended reactor lifetimes are envisaged. Topics that have been investigated include (a) fatigue of low-alloy steel used in piping, steam generators, and reactor pressure vessels, (b) EAC of wrought and cast austenitic stainless steels (SSs), and (c) radiation-induced segregation and irradiation-assisted stress corrosion cracking (IASCC) of Type 304 SS after accumulation of relatively high fluence. Fatigue tests have been conducted on A302-Gr B low-alloy steel to verify whether the current predictions of modest decreases of fatigue life in simulated pressurized water reactor water are valid for high-sulfur heats that show environmentally enhanced ...
2007-09-01
International Nuclear Information System (INIS)
To understand the effect of Mo-Nb additions on the electrochemical behavior of #beta#-titanium alloys in ambient temperature chloride solutions, characterization of the electrochemistry and passivity of a Ti-15Mo-3Al alloy (#beta#-21S) was undertaken. Both solution heat-treated (SHT) and peak-aged (PA) alloys exhibited passive anodic behavior in aerated and deaerated 0.6M NaCl, aerated and deaerated 0.6M NaCl adjusted to pH 1 with HCl, as well as aerated 5M HCl. X-ray photoelectron spectroscopy (XPS) performed after exposure to neutral 0.6M NaCl indicated that both PA and SHT #beta#-21S formed a predominantly TiO_2 film. Auger electron spectroscopy (AES) and cathodic kinetics suggest that the Mo and Nb alloying additions are incorporated into the oxide in amounts less than that found in the alloys. The predominance of the passivating TiO_2 may explain the similarity of the electrochemical behavior observed. However, in deaerated 5M HCl, all materials displayed ...
Effects of ion-induced electron emission on magnetron plasma instabilities
International Nuclear Information System (INIS)
Some magnetron sputtering systems experience rapid oscillations in the current and voltage of the plasma discharge after several hours when equipped with certain targets. These oscillations often lead to the plasma becoming extinguished, a condition known as ''flame-out.'' This article details the study of two 90% W--10% Ti magnetron targets which differed in density. The higher density targets sometimes experienced flame-out after approximately 3 h of sputtering. The less dense material could be sputtered for the entire 15 h life of the target. Scanning electron microscopy pictures and atomic composition depth profiles were obtained using Auger electron spectroscopy. In addition, a Colutron-based ion source with a high vacuum system was used to measure ion-induced secondary electron emission coefficients as a function of energy, ion specie, and gas coverage. Analysis of the sample from the group that suffers flame-out showed large regions of pure titanium in the ...
International Nuclear Information System (INIS)
Colorectal carcinoma is a highly prevalent and common cause of cancer in Taiwan. There is still no available cure for this malignant disease. To address this issue, we applied the multimodality of molecular imaging to explore the efficacy of diagnostic and therapeutic nanoradiopharmaceuticals in an animal model of human colorectal adenocarcinoma [colorectal cancer (CRC)] that stably expresses luciferase (luc) as a reporter. In this study, an in vivo therapeutic efficacy evaluation of dual-nanoliposome (100 nm in diameter) encaged vinorelbine (VNB) and "1"1"1In-oxine on HT-29/luc mouse xenografts was carried out. HT-29/luc tumor cells were transplanted subcutaneously into male SCID mice. Multimodality of molecular imaging approaches including bioluminescence imaging (BLI), gamma scintigraphy, whole-body autoradiography (WBAR) and in vivo tumor growth tracing, histopathology and biochemistry/hematology analyses were applied on xenografted SCID mice to study the treatments with 6% ...
2008-07-01
Corrosion properties of thin molybdenum silicide films
Energy Technology Data Exchange (ETDEWEB)
The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel electrode (SCE). The MoSi{sub 1.9-2.1} films had the best corrosion ...
1997-11-25
Energy Technology Data Exchange (ETDEWEB)
Composite particles represented as TiV{sub 2.1}Ni{sub 0.3}-Raney Ni(R) were prepared by ball-milling a TiV{sub 2.1}Ni{sub 0.3} alloy with Raney Ni in the presence of 0.01 M sodium hypophosphite (NaH{sub 2}PO{sub 2}) aqueous solution as a reducing agent. The composite particles had different morphology from original TiV{sub 2.1}Ni{sub 0.3} alloy particles and TiV{sub 2.1}Ni{sub 0.3}-Raney Ni composite particles prepared by the ball-milling in the absence of the NaH{sub 2}PO{sub 2} aqueous solution. In charge-discharge cycle tests, the TiV{sub 2.1}Ni{sub 0.3}-Raney Ni(R) composite electrode showed the maximum discharge capacity of 620 mAh g{sup -1}, while its cycle durability was similar to the TiV{sub 2.1}Ni{sub 0.3} alloy electrode, which was explained from depth profiles of constituent elements by Auger electron spectroscopy (AES). In thermogravimetry (TG) and differential thermal analysis (DTA), two steps of dehydriding for hydrided TiV{sub 2.1}Ni{sub 0.3}-Raney ...
2004-02-25
International Nuclear Information System (INIS)
Composite particles represented as TiV_2_._1Ni_0_._3-Raney Ni(R) were prepared by ball-milling a TiV_2_._1Ni_0_._3 alloy with Raney Ni in the presence of 0.01 M sodium hypophosphite (NaH_2PO_2) aqueous solution as a reducing agent. The composite particles had different morphology from original TiV_2_._1Ni_0_._3 alloy particles and TiV_2_._1Ni_0_._3-Raney Ni composite particles prepared by the ball-milling in the absence of the NaH_2PO_2 aqueous solution. In charge-discharge cycle tests, the TiV_2_._1Ni_0_._3-Raney Ni(R) composite electrode showed the maximum discharge capacity of 620 mAh g"-"1, while its cycle durability was similar to the TiV_2_._1Ni_0_._3 alloy electrode, which was explained from depth profiles of constituent elements by Auger electron spectroscopy (AES). In thermogravimetry (TG) and differential thermal analysis (DTA), two steps of dehydriding for hydrided TiV_2_._1Ni_0_._3-Raney Ni(R) composite started from much lower temperature than hydrided ...
2004-02-25
Characterization of aluminum surfaces: Sorption and etching
Aluminum, due to its low density and low cost, is a key material for future lightweight applications. However, like other structural materials, aluminum is subject to various forms of corrosion damage that annually costs the United States approximately 5% of its GNP [1]. The main goal is to investigate the effects of various solution anions on aluminum surfaces, and specifically probe pit initiation and inhibition. Using surface analysis techniques including X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy, results have been correlated with those obtained from electrochemical methods and a radiolabeling technique developed in the Wieckowski laboratory. Analysis of data has indicated that important variables include type of anion, solution pH, and applied electrode potential. While aggressive anions such as chloride are usually studied to elucidate corrosion processes to work ultimately toward inhibition, its corrosive ...
2001-01-01
Energy Technology Data Exchange (ETDEWEB)
The importance of cellular dosimetry in both diagnostic and therapeutic nuclear medicine is becoming increasingly recognized. Experimental range-energy relations for electrons and alpha particles, along with derived geometric reduction factors, are used to calculate cellular absorbed fractions for these radiations. The resulting absorbed fractions are employed to calculate cellular S-values for several radionuclides. Cellular absorbed fractions for monoenergetic electron sources with energies ranging from 0.1 keV to 1 MeV, distributed uniformly in the source region, are calculated for several target {l_arrow} source combinations including cell{l_arrow}cell, cell{l_arrow}cell surface, nucleus{l_arrow}nucleus, nucleus {l_arrow}cytoplasm and nucleus {l_arrow}cell surface. Similar data are also provided for monoenergetic alpha particle sources with energies ranging from 3 to 10 MeV. S-values are also conveniently tabulated for {sup 32}P, {sup 35}S, {sup 86}Rb, {sup 89}Sr, {sup 90}Y, {sup ...
1994-02-01
Properties and performance of new metastable Ti-B-C-N hard coatings prepared by magnetron sputtering
Energy Technology Data Exchange (ETDEWEB)
Thin films of new metastable materials from the system Ti-B-C-N were deposited on metallic substrates by d.c. magnetron sputtering in different Ar+N{sub 2} atmospheres. The multiphase compound targets used were based on various compositions on the TiC-TiB{sub 2} and TiB{sub 2}-C tie lines of the Ti-B-C phase diagram. The structure and chemical composition of the films were characterized by electron microprobe analysis, depth profiling Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy. The hardness, critical load of failure and the tribological behavior of the coatings were investigated. Superhard single-phase crystalline metastable Ti-B-C-N layers with hardness values exceeding 5000 HV{sub 0.05} and extremely low sliding wear against 100Cr6 and Al{sub 2}O{sub 3} counterparts could be produced by reactive sputtering of various TiC-TiB{sub 2} targets in Ar+N{sub 2} atmospheres with low nitrogen flows. In the case of carbon-rich ...
1995-10-01
In vivo and in vitro evaluation of dota-lanreotide radiolabelled with gallium-67
International Nuclear Information System (INIS)
One of the refinements of modern Nuclear Medicine is the capacity of providing dynamic and kinetics images of the administered radiopharmaceutical, reproducing its transport mechanism, action sites, receptor binding and excretion route. With the continues technological advances new radiopharmaceuticals have been developed in order to express higher specificity and with higher characters of affinity between receptor/complex. One radiopharmaceutical is formed by a reagent or bio molecule that has in its structure a radioisotope, that has the objectives of carrying it to the organs of affinity or to benign or malign tumoral process. Somatostatin inhibits the growing and proliferation of several tumoral cells. Somatostatin analogs bind to somatostatic receptors that are expressed in different kind of neoplasia DOTA-LANREOTIDE (DOTALAN) is an octapeptide analog to somatostatin. The interest of labeling the bio conjugate with gallium-67 in Nuclear Medicine comes from its physical, chemical ...
Energy Technology Data Exchange (ETDEWEB)
Some hypo-stoichiometric Zr-based Laves phase alloys were prepared and studied from a viewpoint of discharge capacity for electrochemical application. After careful alloy design of ZrMn{sub 2}-based hydrogen storage alloys through changing their stoichiometry while substituting or adding some alloying elements, the Zr(Mn{sub 0.2}V{sub 0.2}Ni{sub 0.6}){sub 1.8} alloy reveals relatively good properties with regard to hydrogen storage capacity, hydrogen equilibrium pressure and electrochemical discharge capacity. In order to improve the discharge capacity and rate-capability, Zr is partially replaced by Ti. The discharge capacity of Zr{sub 1-x}Ti{sub x}(Mn{sub 0.2}V{sub 0.2}Ni{sub 0.6}){sub 1.8} (x=0.0, 0.2, 0.3, 0.4, 0.6) alloy electrodes at 30 C reaches a maximum value and decreases as the Ti fraction increases. In view of electrochemical and thermodynamic characteristics, the occurrence of a maximal phenomenon of the electrochemical discharge capacity of the alloy is attributed to a ...
2000-08-10
ZZ DECAYREM/C, Decay Spectra Library for EXREM Calculation
International Nuclear Information System (INIS)
Description of problem or function: Format: EXREM III; Nuclides: radioactive decay data on 252 Nuclides: 1H-3, 4Be-7, 6C-11, 6C-14, 7N-13, 8O-15, 9F-18, 11Na-22, 11Na-24, 12Mg-28, 13Al-28, 15P-32, 15P-33, 16S-35, 17Cl-36, 17Cl-38, 18A-37, 18A-39, 19K-40, 19K-42, 19K-43, 20Ca-45, 20Ca-47, 20Ca-49, 21Sc-46, 21Sc-47, 21Sc-49, 24Cr-51, 25Mn-52M, 25Mn-52, 25Mn-54, 26Fe-52, 26Fe-55, 26Fe-59, 27Co-56, 27Co-57, 27Co-58, 27Co-60, 28Ni-56, 28Ni-63, 29Cu-64, 30Zn-65, 30Zn-69M, 30Zn-69, 31Ga-67, 31Ga-68, 32Ge-77, 33As-76, 33As-77, 34Se-75, 35Br-80M, 35Br-80, 35Br-82, 35Br-83, 35Br-84, 36Kr-79, 36Kr-83M, 36Kr-85M, 36Kr-85, 36Kr-87, 36Kr-88, 37Rb-84, 37Rb-86, 37Rb-87, 37Rb-88, 37Rb-89, 37Rb-90M, 37Rb-90, 38Sr-85, 38Sr-87M, 38Sr-89, 38Sr-90, 38Sr-91, 38Sr-92, 38Sr-93, 39Y-87, 39Y-88, 39Y-90, 39Y-91M, 39Y-91, 39Y-92, 39Y-93, 40Zr-93, 41Nb-93M, 40Zr-95, 40Zr-97, 41Nb-95M, 41Nb-95, 41Nb-97M, 41Nb-97, 42Mo-99, 43Tc-99M, 43Tc-99, 44Ru-103, 44Ru-105, 44Ru-106, 45Rh-103M, 45Rh-105M, 45Rh-105, 45Rh-106, ...
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