WorldWideScience
1

Structural analysis of a hepatitis B virus genome integrated into chromosome 17p of a human hepatocellular carcinoma.  

UK PubMed Central (United Kingdom)

Hepatitis B virus (HBV) is clearly a factor in the development of hepatocellular carcinoma, but its mechanism of action remains obscure. One possibility is that the HBV integration event alters the...Full Text Available

1988-11-01

2

Effects of Manufacturing Defects and Scaling on Glass Fiber Composite Sandwich Panels in General Aviation Aircraft Structures.  

Science.gov (United States)

This report documents the collaborative effort between the United States and Canada to investigate the impact of process-induced defects on strength and stiffness under static and fatigue loading and for low-cost composite aircraft structures, in particul...

2009-01-01

3

Properties of A-15 Superconductors with Defects  

Science.gov (United States)

It is suggested that the large reduction of the superconducting transition temperature Tc due to defects observed experimentally in some A-15 compounds is caused by smearing of a high peak in the density of states at the Fermi level. The influence of defects on other physical properties (the magnetic susceptibility ?, the elastic modulus Cs, the structural transformation temperature Tm and the electrical resistivity ?) is also discussed from the same point of view. We expect the anomalous temperature dependence of ?, Cs and ? will be suppressed by defects.

1978-05-01

4

Generalizing Boolean Satisfiability I: Background and Survey of Existing Work  

CERN Document Server

This is the first of three planned papers describing ZAP, a satisfiability engine that substantially generalizes existing tools while retaining the performance characteristics of modern high-performance solvers. The fundamental idea underlying ZAP is that many problems passed to such engines contain rich internal structure that is obscured by the Boolean representation used; our goal is to define a representation in which this structure is apparent and can easily be exploited to improve computational performance. This paper is a survey of the work underlying ZAP, and discusses previous attempts to improve the performance of the Davis-Putnam-Logemann-Loveland algorithm by exploiting the structure of the problem being solved. We examine existing ideas including extensions of the Boolean language to allow cardinality constraints, pseudo-Boolean representations, symmetry, and a limited form of ...

2011-01-01

5

Designed defects in 2D antidot lattices for quantum information processing  

DEFF Research Database (Denmark)

We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas (2DEG) at a semiconductor heterostructure. Calculations of the band structure of a periodic antidot lattice are presented. A point defect is created by removing a single antidot, and calculations show that localized states form within the defect, with an energy structure which is robust against thermal dephasing. The exchange coupling between two electrons residing in two tunnel-coupled defect states is calculated numerically. We find results reminiscent of double quantum dot structures, indicating that the suggested structure is a feasible physical implementation of spin qubits.

2008-01-01

6

Electronic structure of clusters of A-15 compounds with radiation induced defects  

Energy Technology Data Exchange (ETDEWEB)

The electronic structure of the clusters (V/sub 3/Si/sub 4/)/sup 12 -/, (Nb/sub 3/Sn/sub 4/)/sup 12 -/(Mo/sub 3/Ge/sub 4/)/sup 15 -/ in crystalline V/sub 3/Si, Nb/sub 3/Sn, Mo/sub 3/Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered.

1981-05-01

7

Electronic structure of clusters of A-15 compounds with radiation induced defects  

International Nuclear Information System (INIS)

The electronic structure of the clusters [V_3Si_4]"1"2"-, [Nb_3Sn_4]"1"2"-[Mo_3Ge_4]"1"5"- in crystalline V_3Si, Nb_3Sn, Mo_3Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered. (author).

8

Giant magnetoresistance sensing technologies for detecting small defects in metallic structures  

Science.gov (United States)

Giant magnetoresistance (GMR) has been used with Eddy current testing to detect small defects not only in thin film structures but also in multilayered metallic structures. This work detected small scratches in the thin film under the surface where these defects were unable to be inspected or monitored by regular testing. In addition, rotational GMR magnetic sensor based Eddy current probes were used for detecting buried corner cracks at the edge of holes in metallic structures. The results of this study proved that giant magnetoresistance is very powerful and effective to sense the magnetic field, which is the result from the perturbation of the Eddy currents caused by a defect. This method can be used for quality control of metallization layers on silicon wafer and to detect cracks in thick structures such as cracks in aging aircraft.

2008-01-01

9

The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

1994-06-01

10

Properties of A-15 superconductors with defects  

International Nuclear Information System (INIS)

It is suggested that the large reduction of the superconducting transition temperature T sub(c) due to defects observed experimentally in some A-15 compounds is caused by smearing of a high peak in the density of states at the Fermi level. The influence of defects on other physical properties (the magnetic susceptibility chi, the elastic modulus C sub(s), the structural transformation temperature T sub(m) and the electrical resistivity rho) is also discussed from the same point of view. We expect the anomalous temperature dependence of chi C sub(s) and rho will be suppressed by defects. (auth.).

11

PBG structures for multi-beam devices  

International Nuclear Information System (INIS)

Photonic band gap structures with single or multiple defects show potential for use in single-beam and multi-beam klystrons and particle accelerators. The primary concerns are the coupling between the modes at each individual defect site and the damping of unwanted higher order modes. A conceptual design of a PBG based, multi-beam klystron and methods to damp HOMs and to cool and tune the structure are presented.

2002-12-12

13

Solutions to defect-related problems in implanted silicon by controlled injection of vacancies by high-energy ion irradiation  

Energy Technology Data Exchange (ETDEWEB)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

1999-06-01

14

Solutions to defect-related problems in implanted silicon by controlled injection of vacancies by high-energy ion irradiation  

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

1999-06-01

15

Spin qubits in antidot lattices  

DEFF Research Database (Denmark)

We suggest and study designed defects in an otherwise periodic potential modulation of a two-dimensional electron gas as an alternative approach to electron spin based quantum information processing in the solid-state using conventional gate-defined quantum dots. We calculate the band structure and density of states for a periodic potential modulation, referred to as an antidot lattice, and find that localized states appear, when designed defects are introduced in the lattice. Such defect states may form the building blocks for quantum computing in a large antidot lattice, allowing for coherent electron transport between distant defect states in the lattice, and for a tunnel coupling of neighboring defect states with corresponding electrostatically controllable exchange coupling between different electron spins.

2008-01-01

16

Cluster-loop structure influence on molybdenum radiation hardening  

International Nuclear Information System (INIS)

Results on defect structure study and degree of molybdenum radiation hardening irradiated by fission neutrons and medium energy alpha-particles are presented. It is shown that molybdenum irradiation by alpha-particles and neutrons leads to different degree of material hardening for the same damage level. It is established that molybdenum radiation hardening is mainly defined by radiation defect clusters visible in electron microscope whose coefficient of rigidity depends on their size. 5 refs.; 6 figs.; 2 tabs. (author).

1990-05-22

17

Effect of V-shaped defects on structural and optical properties of AlGaN/InGaN multiple quantum wells  

International Nuclear Information System (INIS)

We have investigated the correlation between V-shaped defect formation and the optical properties of AlGaN/(In)GaN multiple quantum wells (MQWs) grown under different growth conditions and then demonstrated the characteristics of fabricated ultraviolet (UV) light emitting diodes (LEDs). From the temperature-dependent photoluminescence (PL) measurement, the internal quantum efficiency for 300 K was obtained as 43.6% for a sample with a low density of V-defects in a MQW and 13.7% for a sample with a high density of V-defects. The carrier lifetime based on the time resolved PL measurement at room temperature was 0.32 ns for a sample with a high density of V-defects and 1.26 ns for a sample with a low density of V-defects. And we also found that the density of V-defects affected the external quantum efficiency and wall plug efficiency of the fabricated UV LEDs. ...

2008-07-07

18

Robustness of large-span timber roof structures - Structural aspects  

British Library Electronic Table of Contents (United Kingdom)

Design rules for robustness require insensitivity to local failure and the prevention of progressive collapse. This is often verified by applying the load case ''removal of a limited part of the structure''. This paper will evaluate typical structural systems for large-span timber roof structures against these requirements, comparing the results against typical reasons for damages and failures. Applying the finding that most failures of timber structures are not caused by random occurrences or local defects, but by global (repetitive) defects (e.g. from systematic mistakes), it is shown that the objective of load transfer-often mentioned as preferable-should be critically analysed for such structures. Based on these findings, proposals for structural systems and details towards a robust de...

2011-01-01

19

Multilayer structures with giant magnetoresistance  

International Nuclear Information System (INIS)

The phenomenological description of the giant magnetoresistance effect as well as discussion of the requirements which must be fulfilled in giant magnetoresistance thin film structures are given in the first part of our review. In the second part the magnetization reversal and giant magnetoresistance effect of antiferromagnetically coupled multilayers, spin Valve and pseudo-spin valve thin film structures are explained. For these structures we also discuss the influence of the structure defects such as surface roughness and pinholes on the giant magnetoresistance effect. (author)

2001-09-23

20

Molecular models in the quantum-chemical investigation of the structure of defect centers on oxide catalysts  

Energy Technology Data Exchange (ETDEWEB)

Several possibilities of the use of molecular models in quantum-chemical investigations of the structure of defect centers on the surfaces of oxides on nontransition elements have been illustrated. There has been a special discussion of the assumption of the local nature of the chemical interactions in these systems, which underlies such an approach, and of the consequent laws governing the formation of their lattices in the example cases of zeolites, kaolinites, and comparable boron- and aluminum-containing oxides. A quantum-chemical interpretation of the body of experimental data from investigations of the dehydroxylation of H forms of zeolites has been given. The structure of the Lewis acid centers formed as a result, and their chemisorption properties, have been discussed.

1987-05-01

21

Electronic structure of one-to-one and defect scandium sulfide  

Energy Technology Data Exchange (ETDEWEB)

Self-consistent electronic structure calculations have been performed on two compositions of scandium sulfide ScS and Sc/sub 3/S/sub 4/. The results of the calculation of ScS are similar to those obtained for other transition metal chalcogenides and are in excellent agreement with heat capacity and reflectance measurements as well as UPS experiments. The calculation of the defect structure indicates the creation of sulfur p nonbonding states in metal-deficient ScS. The valency of the metal ions remains unchanged upon the creation of vacancies.

1984-03-01

22

Calculation of atomic spontaneous emission rate in 1D finite photonic crystal with defects  

CERN Document Server

We derive the expression for spontaneous emission rate in finite one-dimensional photonic crystal with arbitrary defects using the effective resonator model to describe electromagnetic field distributions in the structure. We obtain explicit formulas for contributions of different types of modes, i.e. radiation, substrate and guided modes. Formal calculations are illustrated with a few numerical examples, which demonstrate that the application of effective resonator model simplifies interpretation of results.

2009-01-01

23

Phylogenetic Relationships in Pterodroma Petrels Are Obscured by Recent Secondary Contact and Hybridization  

UK PubMed Central (United Kingdom)

The classification of petrels (Pterodroma spp.) from Round Island, near Mauritius in the Indian Ocean, has confounded researchers since their...Full Text Available

24

Female urethral syndrome. A female prostatitis?  

UK PubMed Central (United Kingdom)

The cause of the female urethral syndrome has previously been obscure, as it has been associated by definition with a lack of objective findings but a plethora of subjective complaints of retropubic...Full Text Available

1996-05-01

25

A Study on TOFD Inspection Using Phased Array Ultrasonic Technique  

Energy Technology Data Exchange (ETDEWEB)

The techniques in order to measure the depth of defect in weldment and structure accurately have been developed. Many researches have made efforts to develop the methods for the accurate depth sizing of defect. TOFD is known as the most accurate method of various methods for measuring depth sizing. However, there is a possibility to miss defects because of the limitation of beam coverage for the ultrasound incident angle. In this study, the results for detectability and depth sizing using phased array ultrasonic technique for thick body were compared with those of conventional TOFD technique. It was experimentally confirmed that the phased array ultrasonic TOFD technique gives good detectability and accurate depth measurement for the various types of defects. The phased array ultrasonic TOFD technique developed in this study will contribute to increase the inspection reliability in ...

2005-08-15

26

Cracking resistance in steam pipe fittings having various microdamage levels  

Energy Technology Data Exchange (ETDEWEB)

Cracking resistance and metal damage are considered in relation to structural state for steam-pipe fittings during use. An approximate scheme is given for estimating the maximum permissible operating time in the plastic state in relation to the depth of an observed crack-type defect.

1995-05-01

27

Congenital woolly hair without P2RY5 mutation  

UK PubMed Central (United Kingdom)

Congenital woolly hair is a disorder with structural defects of the hair shafts. Curled hairs are noticed at birth or soon after birth and often improve with age. Some cases of woolly hairs are associated...Full Text Available

2009-01-01

28

Research and development of photovoltaic power system. Study on structural defects in silicon-based amorphous materials; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kei zairyo no kozo kekkan ni kansuru kenkyu  

Energy Technology Data Exchange (ETDEWEB)

Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending ...

1994-12-01

29

High capacity orthorhombic LiMnO{sub 2} phases: role of piling up defects; Phases LiMnO{sub 2} orthorhombiques a haute capacite: role des defauts d`empilement  

Energy Technology Data Exchange (ETDEWEB)

The electrochemical performances of orthorhombic LiMnO{sub 2} compounds are analyzed in order to find a structural and/or morphological origin to the differences of electrochemical behaviours observed in compounds with different size of crystallites and different amounts of lattice defects. Energy capacity performances of 200 Ah/kg are reached for materials with crystallites of about 10{sup 7} Angstrom{sup 3} and with about 7% of defects, while energy capacities of only 80 Ah/kg are obtained for materials with ten times bigger crystallites. (J.S.) 3 refs.

1996-12-31

30

Topological Defects in the Moduli Sector of String Theory  

CERN Document Server

We point out that the moduli sector of the $(2,2)$ string compactification with its nonperturbatively preserved non-compact symmetries is a fertile framework to study global topological defects, thus providing a natural source for the large scale structure formation. Based on the target space modular invariance of the nonperturbative superpotential of the four-dimensional N=1 supersymmetric string vacua, topologically stable stringy domain walls are found. They are supersymmetric solutions, thus saturating the Bogomolnyi bound. It is also shown that there are moduli sectors that allow for the global monopole-type and texture-type configurations whose radial stability is ensured by higher derivative terms.

1991-01-01

31

Magnetic behavior in defect-perovskites RTa{sub 3}O{sub 9} (R=Nd,Eu and Ho)  

Energy Technology Data Exchange (ETDEWEB)

Magnetic behavior in three compounds RTa{sub 3}O{sub 9} (R = Nd, Eu and Ho) with defect-perovskite structures has been investigated by DC magnetic susceptibility. The susceptibility of NdTa{sub 3}O{sub 9} shows strong influence of crystal field. For EuTa{sub 3}O{sub 9} a typical Van Vleck paramagnetism has been observed. HoTa{sub 3}O{sub 9} obeys a Curie-Weiss law above 20 K. (orig.) 8 refs.

1998-01-01

32

Investigation of lithium niobate nonstoichiometric monocrystals by the NMR method  

International Nuclear Information System (INIS)

The paper studies the effect of crystal structure of LiNbO_3 monocrystals on NMR spectra of "7 Li and "9"3 Nb. Models of defect structure are analyzed via comparison of NMR experimental spectra and gradients of electrical field predicted on the basis of the calculations on "7 Li and "9"3 Nb nuclei using the relevant model. It is shown that no one of the main models of lithium niobate defect structure explains the peculiarities of NMR spectra. Conclusions are made about the independence of the reasons of occurrence of NMR additions lines "7 Li and "9"3 Nb, as well as, about links of "9"3 Nb NMR weak additional lines with the ranges of a different crystalline phase that may form while growing. 18 refs., 2 figs., 3 tabs.

33

Structure and electronic studies of defects in amorphous silicon. Final report, March 1980-February 1981  

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures ...

1981-08-01

34

UV photoelectron yield spectroscopy of chalcopyrite structure Cu-In-Se thin films  

International Nuclear Information System (INIS)

Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).

35

Hardware-oriented reliability centered maintenance for the diesel generators of Wolsung unit 1  

Energy Technology Data Exchange (ETDEWEB)

The DGs (Diesel Generators) in NPP (Nuclear Power Plant) has been used for the emergency electric power source to shot down the nuclear reactor safety in case of station blackout. The RCM (Reliability Centered Maintenance) has been applied to DGs for increasing the safety of NPP. The structured defects of DG were not remedied by the improvement of maintenance method. As the first stage of RCM, to find the structured defect, its failure= models were searched and analyzed through the ten year maintenance information. The structured defects such as the air compressor, the lubricating oil pressure, and the insufficient load were the root causes of main failures. The air reservoir reinstallation, the lubricating oil tube modification, the load bank installation, and the qualitative instrumentation were the solutions for the hardware oriented RCM of DGs. There remains ...

1997-05-01

36

Opposing function of mitochondrial prohibitin in aging  

UK PubMed Central (United Kingdom)

While specific signalling cascades involved in aging, such as the insulin/IGF-1 pathway, are well-described, the actual metabolic changes they elicit to prolong lifespan remain obscure. Nevertheless,...Full Text Available

37

Is alopecia areata an autoimmune-response against melanogenesis-related proteins, exposed by abnormal MHC class I expression in the anagen hair bulb?  

UK PubMed Central (United Kingdom)

The etiology of alopecia areata (AA), a putative autoimmune disease characterized by sudden hair loss, has remained obscure. It is not understood, how the characteristic inflammatory infiltrate that...Full Text Available

1993-11-01

38

Climate change induces demographic resistance to disease in novel coral assemblages  

UK PubMed Central (United Kingdom)

Climate change is reshaping biological communities and has already generated novel ecosystems. The functioning of novel ecosystems could depart markedly from that of existing systems and therefore obscure...Full Text Available

2011-02-01

39

Can photo-ionization explain the decreasing fraction of X-ray obscured AGN with luminosity?  

CERN Document Server

Chandra and XMM surveys show that the fraction of obscured AGN decreases rapidly with increasing luminosity. Although this is usually explained by assuming that the covering factor of the central engine is much smaller at luminous QSOs, the exact origin of this effect remains unknown. We perform toy simulations to test whether photo-ionisation of the obscuring screen in the presence of a strong radiation field can reproduce this effect. In particular, we create X-ray spectral simulations using a warm absorber model assuming a range of input column densities and ionization parameters. We fit instead the simulated spectra with a simple cold absorption power-law model that is the standard practice in X-ray surveys. We find that the fraction of absorbed AGN should fall with luminosity as $L^{-0.16\\pm0.03}$ in rough agreement with the observations. Furthermore, this apparent decrease in the obscuring material is consistent with ...

2008-01-01

40

A Deflationary Metaphysics of Morality  

British Library Electronic Table of Contents (United Kingdom)

The metaphysical dispute between moral realists and antirealists is cast in terms of properties: the realist holds that moral properties exist, the antirealist denies this claim. There is a longstanding philosophical dispute over the nature of properties, and the obscurity of properties may make the realist/antirealist dispute even more obscure. In the spirit of deflationary theories of truth, we can turn to a deflationary theory of properties in order to clarify this issue. One might reasonably worry that such an account of properties would not be capable of properly characterizing disputes regarding the existence or nonexistence of genuine moral properties. In this paper, I will show that, within this framework, the traditional disputes over the existence of moral properties can be chara...

2010-01-01

41

Repair of floating offshore units using bonded fibre composite materials  

British Library Electronic Table of Contents (United Kingdom)

On ships, tankers and similar vessels structural defects such as cracks and corrosion damage are typically repaired by welding. However, welding is unwanted hotwork on floating offshore units (FOUs) such as floating, production, storage and offloading (FPSO) and floating, storage and offloading (FSO) vessels because it requires shutdown of parts of the vessel thus resulting in expensive production delays. Bonded fibre composite material patch repairs can be used as an alternative to overcome the hazards of hotwork associated with welding. The patches are bonded over the defect and the integrity of the original structure is hence restored. The patch repair technology can also be utilised to provide upgrades, such as life extensions and higher design requirements. A recommended practice (RP)...

2009-01-01

42

Surface and subsurface analysis of Sheep Mountain anticline, Wyoming  

Energy Technology Data Exchange (ETDEWEB)

The Sheep Mountain area, in the southwest Wind River Basin, is the up plunge closure of the Derby Dome-Winkleman Dome producing trend of an echelon folds which comprise the first line of folding down the northeast flank of the Wind River Mountains. The structural style exposed in the Palozoic reservoir rocks of Sheep Mountain may serve as a model for the other structural features in the Wind River Basin. As in the case of the Derby Dome and Winkleman Dome, Sheep Mountain is typically asymmetric to the southwest. Local east-directed thrusts exposed in the core of the anticline place Pennsylvania over Permian age rocks. A major change in the trend of the anticlinal crest within Sheep Mountain, suggests development of separate left-stepping en echelon closures at depth. The northwest end of Sheep Mountain also forms a left-stepping en echelon pattern with Derby Dome. The northwest plunge of Sheep Mountain is facilitated by compartmentalization ...

1988-01-01

43

Doping of silicon carbide by ion implantation  

Energy Technology Data Exchange (ETDEWEB)

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, ...

2001-07-01

44

Nonstoichiometry and diffusion in ceria and ceria solid solutions  

Energy Technology Data Exchange (ETDEWEB)

Some of the results of property measurements of CeO{sub 2} and its solid solutions were reviewed. The deviation from stoichiometry of undoped and doped CeO{sub 2} was presented in several figures, which suggested that CeO{sub 2} fired at high temperatures in air might be nonstoichiometric in some degree. At low temperatures, the deviation from stoichiometry in doped CeO{sub 2} is higher than undoped CeO{sub 2}. As another interesting property, CeO{sub 2} shows high solubility to trivalent cations such as rare earth elements. A possible reason behind this high solubility was presented. The nonstoichiometric defect in undoped CeO{sub 2} and the trivalent cation in solid solution with CeO{sub 2} have to be compensated by other defects. The possible defect structures in this solid solution were reviewed and the most probable structure was chosen based on density measurement and impurity ...

2003-07-01

45

Neutron scattering studies in the actinide region. Progress report, August 1, 1992--July 31, 1993  

Energy Technology Data Exchange (ETDEWEB)

This report discusses the following topics: Prompt fission neutron energy spectra for {sup 235}U and {sup 239}Pu; Two-parameter measurement of nuclear lifetimes; ``Black`` neutron detector; Data reduction techniques for neutron scattering experiments; Inelastic neutron scattering studies in {sup 197}Au; Elastic and inelastic scattering studies in {sup 239}Pu; and neutron induced defects in silicon dioxide MOS structures.

1993-09-01

46

Improvement of the parameters of shallow p"+-n-junctions in silicon by additional carbon implantation and step-by-step thermal treatments  

International Nuclear Information System (INIS)

In this article carbon co-implantation and step-by-step thermal treatments of shallow p"+-n-junctions formation were used with the purpose of extended defect suppression and reduction of boron transient enhanced diffusion. A substantial improvement of the structural and electrical parameters of shallow p"+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)

47

Electron microscopy analysis of grain boundary structure and composition in superplastically deformed Al-Mg alloys  

Energy Technology Data Exchange (ETDEWEB)

Evaluation of grain boundary composition and structure in superplastically deformed AA5083-based alloys (Al-4.5Mg-1.6Mn-0.2Zr) was carried out in a field-emission gun transmission electron microscope (FEG-TEM). During superplastic deformation at high homologous temperatures materials undergo extensive grain boundary sliding (GBS) which creates a flow of defects in the near-boundary region. Recent literature has shown that the grain-boundary composition in Al-Mg alloys is not necessarily the same as the matrix, and that these differences can have an effect on GBS.

1996-12-31

48

Surface segregation and radiation hardening of 16Cr12MoWSiVNbB steel after irradiation with Ni++ and He+ ions  

British Library Electronic Table of Contents (United Kingdom)

Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.

2011-01-01

49

Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si{sub 1-x}Ge{sub x} source/drain junctions  

Energy Technology Data Exchange (ETDEWEB)

The purpose of this paper is to evaluate the role of the strain-relaxation processes on the leakage current of embedded SiGe S/D junctions. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured to further investigate the relaxation degree of embedded SiGe S/D junctions in the regime where partial relaxation by misfits dislocations is assumed, yielding a reduction of the leakage current density. Further, the impact of the ion implantation-related defects on the electrical performance is discussed. The analysis is complemented with structural characterization based on High Resolution Transmission Electron Microscopy (HRTEM) and Nomarski microscopy. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2009-08-15

50

Influence of the X-ray radiation on the lifetime of carriers in the p-n junctions of Si and Ge  

International Nuclear Information System (INIS)

Lifetime of minority charae carriers in the Si and Ge p-n unctions has been measured by pulse method of conductivity modulation of base. Its dependence on the X-ray radiation dose has been investigated. Dependence of current transmission coefficients on the dose has been measured and their sharp decrease at low doses and the following saturation at high doses have been observed. Linear dependence of lifetime on X-ray radiation dose has been obtained. Resulting from the comparison of regularities of the change of lifetime due to current characteristics, it has been shown that X-ray radiation leads to the formation of the surface defects, influencing the change of current characteristics as well as to stationary structural defects, causing the decrease of lifetime of the charge carriers with the increase of X-ray radiation dose.

51

Resonances in gravitational scenario given by deformed branes  

Science.gov (United States)

In this work we examine a five-dimensional brane-world model with brane structure driven by a real scalar field. From the deformation of a kink-like defect we find a new class of brane solutions containing internal structures which have implications for the way the background space-time is constructed and the way its curvature behaves. Initially, for spin 0 scalar field, we find a zero mode which can be localized on the deformed brane. However, this result can change by the gravitational interaction with the brane internal structure. Analyzing the massive modes of the scalar field, using two different methods, we find resonance structures similar to those found in the study of gravity localization. The main objective here is to observe the contributions of the deformation procedure to the resonances and to the well known field localization methods.

2011-08-01

52

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 ...

1999-03-01

53

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon  

International Nuclear Information System (INIS)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute ...

1999-03-01

54

Magnetic susceptibility of P{sup +}N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised  

Energy Technology Data Exchange (ETDEWEB)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically ...

2003-09-15

55

Magnetic susceptibility of P"+N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised  

International Nuclear Information System (INIS)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P"+N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P"+N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. ...

2003-09-15

56

Influence of vanadium doping on the electrochemical behaviour of MnO{sub 2} rutile; Influence du dopage par le vanadium sur le comportement electrochimique de MnO{sub 2} rutile  

Energy Technology Data Exchange (ETDEWEB)

Vanadium doped manganese bi-oxide has been obtained from a solution containing both cations. The X-ray diffraction of this material indicates a rutile-type phase but the enlargement of some lines supports the existence of several lattice defects. Also the particle size of the doped material is significantly smaller than the one of the non-doped material obtained in the same conditions. The presence of pentavalent vanadium inside the lattice leads to a small amount of trivalent manganese. Electron microscopy shows the existence of defects which have a tendency of becoming well-ordered and to stabilize a sur-structure. At ambient temperature, the electrochemical behaviour of doped manganese bi-oxide is greatly improved when compared to the non-doped phase. This behaviour is due to the presence of numerous lattice defects and to the smaller size of crystallites. In polymer batteries, the behaviour is ...

1996-12-31

57

Annealing and diffusion characteristics of boron-through-oxide implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation ...

1991-01-01

58

Annealing and diffusion characteristics of boron-through-oxide implanted silicon  

International Nuclear Information System (INIS)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time ...

59

Thermodynamics, lattice stability and defect structure of strontium silicides via first-principles calculations  

International Nuclear Information System (INIS)

The thermodynamics of the Sr-Si system is of fundamental importance for the understanding of eutectic modification of Al-Si alloys. At the same time, strontium silicides have recently been found to have potential applications in electronic devices. Renewed research efforts have led to a re-evaluation of the phase equilibria in this system, resulting in the discovery of previously undetected stable intermetallic compounds. In this work, we investigate the finite temperature thermodynamic properties of the stable (and metastable) Sr-Si intermetallics. The vibrational properties of the intermetallic compounds are calculated within harmonic theory, with quasi-harmonic corrections to account for the effects of thermal expansion. The total free energies of the compounds are computed considering vibrational and electronic contributions, as well as weak anharmonic corrections. The ground state of the system is predicted and compared to previous experimental and computational results. The ...

2009-09-18

60

Structural changes in amorphous Pd_8_0Si_2_0 and Pd_7_7_._5 Cu_6 Si_1_6_._5 alloys caused by neutron irradiation  

International Nuclear Information System (INIS)

The present work is to study effects of neutron irradiation on the structure of amorphous Pb_8_0 Si_2_0 and Pd_7_7_._5 Cu_6 Si_1_6_._5 alloys by using X-ray diffraction techniques. differential scanning calorimertry (DSC) and internal friction measurements. The irradiation will produce obvious changes in the pair correlation function g(r) and radial distribution function RDF (r). The increase of crystallization temperature (Tx) and enthalpy of two specimens were found by DSC measurements after irradiation. The results of internal friction measurement show that the internal friction of the irradiated Pd_8_0Si_2_0 alloy is higher than that of the unirradiated in the temperature range of Tstructure changes before and after neutron irradiation are discussed in terms of the concepts of density fluctuation defects (p) and shear stress fluctuation defects (#iota#).

61

Imaging magnetic domain structure in sub-500 nm thin film elements  

Energy Technology Data Exchange (ETDEWEB)

Magnetic imaging in the transmission electron microscope (TEM) has been used to examine submicron elements with the aim of discovering down to what element size complex domain patterns can form. The elements were squares, circles, triangles, and pentagons in the size range 100{endash}500 nm and were made from 36 nm Co films or 8 nm Ni{sub 80}Fe{sub 20} (NiFe) with in-plane magnetization. The magnetic domain structures in these elements were imaged at high resolution using the differential phase contrast imaging mode in a TEM. Nonuniform magnetization structures were seen in the images. Vortices were present at remanence in all shapes of 36-nm-thick Co elements down to 100 nm size and in circular NiFe elements down to 116 nm diameter. Triangular NiFe elements did not have a vortex state at remanence, instead the magnetization curved round within the element but did not achieve complete flux closure. In simulations of square and circular NiFe ...

2001-06-01

62

H_2 emission arises outside photodissociation regions in ultra-luminous infrared galaxies  

CERN Document Server

Ultra-luminous infrared galaxies are among the most luminous objects in the local universe and are thought to be powered by intense star formation. It has been shown that in these objects the rotational spectral lines of molecular hydrogen observed at mid-infrared wavelengths are not affected by dust obscuration, leaving unresolved the source of excitation of this emission. Here I report an analysis of archival Spitzer Space Telescope data on ultra-luminous infrared galaxies and demonstrate that star formation regions are buried inside optically thick clouds of gas and dust, so that dust obscuration affects star-formation indicators but not molecular hydrogen. I thereby establish that the emission of H_2 is not co-spatial with the buried starburst activity and originates outside the obscured regions. This is rather surprising in light of the standard view that H_2 emission is directly associated with star-formation ...

2010-01-01

63

Beyond the “Pragmatic Acquiescence” Controversy: Reconciling the Educational Thought of Lewis Mumford and John Dewey  

British Library Electronic Table of Contents (United Kingdom)

This article provides a reconsideration of the intellectual altercation between John Dewey and Lewis Mumford in the 1920s, and a sketch of some educational implications that follow this reconsideration. Although past scholarship has tended to focus on ways in which the altercation obscured similarities in their thought, we consider whether important differences were also obscured, particularly regarding their outlook on science and technology, their potential place in society, and their ideas about the best means to positive social change. We also consider how these differences might play out in philosophy of education/educational practice, concluding that Mumford's commitment to regionalism can augment Dewey's philosophical vision while also helping deal with pressing contemporary social ...

2011-01-01

64

The kernel polynomial method for non-orthogonal electronic structure calculations  

Energy Technology Data Exchange (ETDEWEB)

The Kernel Polynomial Method (KPM) has been successfully applied to tight-binding electronic structure calculations as an O(N) method. Here the authors extend this method to nonorthogonal basis sets with a sparse overlap matrix S and a sparse Hamiltonian H. Since the KPM method utilizes matrix vector multiplications it is necessary to apply S{sup {minus}1}H onto a vector. The multiplication of S{sup {minus}1} is performed using a preconditioned conjugate gradient method and does not involve the explicit inversion of S. Hence the method scales the same way as the original KPM method, i.e. O(N), although there is an overhead due to the additional conjugate gradient part. The authors show an application of this method to defects in a titanate/platinum interface and to a large scale electronic structure calculation of amorphous diamond.

1996-11-01

65

Electronic structures of luminescence centers in pure and defective scintillation crystals AWO4 (A = Pb, Cd, Zn)  

International Nuclear Information System (INIS)

The electronic structures of the set of molecular clusters of dielectric oxide crystals AWO4 (A = Pb, Cd, Zn), the sizes of which increase sequentially are ab-initio calculated by the Restricted Hartree-Fock (RHF) method. The results of calculations of molecular orbitals and energy dependences of partial densities of electronic states of different clusters are compared each to other and to experimental data. It is found that calculated electronic structures of the tungstate groups and cations which are surrounded in cluster by certain number of the nearest neighbor atoms of the crystals quite well represent the experimentally obtained value of the forbidden gap of corresponding AWO4 crystal. (authors)

66

Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors  

Energy Technology Data Exchange (ETDEWEB)

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

2009-08-15

67

Defect modelling  

International Nuclear Information System (INIS)

Calculations, drawing principally on developments at AERE Harwell, of the relaxation about lattice defects are reviewed with emphasis on the techniques required for such calculations. The principles of defect modelling are outlined and various programs developed for defect simulations are discussed. Particular calculations for metals, ionic crystals and oxides, are considered. (UK).

1980-03-01

68

Study of silicon damage caused by ultra-low energy boron implantation  

International Nuclear Information System (INIS)

Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross section transmission microscopy (XTEM) as ...

69

Changes in the structure and superconducting transition temperature of A-15 compounds under the effect of high pressure and shear strain  

Energy Technology Data Exchange (ETDEWEB)

The study is concerned with the combined effect of high pressure and shear strain on the properties of the A-15 intermetallics Nb3Sn and Nb3Al0.75Ge0.25. The properties discussed are the superconducting transition temperature, the width and intensity of the X-ray diffraction lines, and the width and shape of the Mossbauer absorption lines. It is shown that the combined effect of high pressure and shear strain leads to an intense generation of defects in polycrystalline specimens; the size of the ordered regions does not exceed 300 A even under the least severe conditions. 5 references.

1985-01-01

70

Autogenous electrolyte, non-pyrolytically produced solid capacitor structure  

Energy Technology Data Exchange (ETDEWEB)

A solid electrolytic capacitor having a solid electrolyte comprising manganese dioxide dispersed in an aromatic polyamide capable of further cure to form polyimide linkages, the solid electrolyte being disposed between a first electrode made of valve metal covered by an anodic oxide film and a second electrode opposite the first electrode. The electrolyte autogenously produces water, oxygen, and hydroxyl groups which act as healing substances and is not itself produced pyrolytically. Reduction of the manganese dioxide and the water molecules released by formation of imide linkages result in substantially improved self-healing of anodic dielectric layer defects.

1998-01-01

71

Anatomical changes after radical surgery and reconstruction with pedunculated or revascularized flaps in advanced head and neck cancer: CT and MR features; Modificazioni anatomiche dopo chirurgia radicale e ricostruzione con lembi peduncolati o rivascolarizzati nei tumori cervico-facciali negli stadi avanzati: Aspetti con Tomografia Computerizzata e Risonanza Magnetica  

Energy Technology Data Exchange (ETDEWEB)

January, 1992, to October, 1995, sixty-four patients with advanced head and neck cancer underwent head and neck reconstructive surgery using myocutaneous or revascularized flaps; in the same period, all patients were consecutively examined with CT and MRI. Myocutaneous flaps were used in 26 patients: 12 flaps were tubular and 14 linear. Revascularized flaps were used in 38 patients: to repair a large defect in 26 patients (14 latissimus dorsi flaps and 12 temporal muscle flaps) and to repair an oral damage in 12 patients (5 revascularized radial and 7 jejunal flaps). CT and MR images of myocutaneous flaps showed the flaps as fatty areas, repairing large surgical defects, hypodense at CT and hyperintense at MRI, with no post-contrast enhancement. The appearance of revascularized flaps at CT and MRI depends on the characteristics of the structure used to repair the surgical defect: jejunal and radial ...

1997-04-01

72

Anatomical changes after radical surgery and reconstruction with pedunculated or revascularized flaps in advanced head and neck cancer: CT and MR features  

International Nuclear Information System (INIS)

January, 1992, to October, 1995, sixty-four patients with advanced head and neck cancer underwent head and neck reconstructive surgery using myocutaneous or revascularized flaps; in the same period, all patients were consecutively examined with CT and MRI. Myocutaneous flaps were used in 26 patients: 12 flaps were tubular and 14 linear. Revascularized flaps were used in 38 patients: to repair a large defect in 26 patients (14 latissimus dorsi flaps and 12 temporal muscle flaps) and to repair an oral damage in 12 patients (5 revascularized radial and 7 jejunal flaps). CT and MR images of myocutaneous flaps showed the flaps as fatty areas, repairing large surgical defects, hypodense at CT and hyperintense at MRI, with no post-contrast enhancement. The appearance of revascularized flaps at CT and MRI depends on the characteristics of the structure used to repair the surgical defect: jejunal and radial ...

1997-01-01

73

Calculation of cosmic ray antiproton-proton ratio  

Energy Technology Data Exchange (ETDEWEB)

Independent calculations of the antiproton-to-proton ratio by Gaisser and Maurer and by Badhwar et al. have produced conflicting results which obscure the interpretation of recent measurements of cosmic ray antiprotons. A detailed reexamination of these calculations has been performed and these differences have been resolved. We find that the first calculation was essentially correct and the reported fluxes of antiprotons are significantly higher than expected for secondary antiprotons in conventional models of cosmic ray propagation, as indicated by other recent calculations.

1982-01-15

74

Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469  

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and ...

1997-07-01

75

The special features of equilibrium adsorption of argon on homogeneous and inhomogeneous surfaces  

British Library Electronic Table of Contents (United Kingdom)

Comparative patterns of equilibrium adsorption of argon on the surface of graphitized thermal carbon black (GCB) and the inhomogeneous surfaces of nongraphitized carbon black and silica at 77 and 87.3 K were considered. It was shown that argon acquires the properties of a special phase with a layered structure and exhibits two-dimensional phase transitions with the formation of crystal-like layers near the homogeneous surface of GCB even at a temperature exceeding the triple point. However, already at a distance of three-four molecular diameters from the surface, adsorbed argon behaves as a bulk phase in a weak external field. The defect surface of nongraphitized carbon black and the amorphous surface structure of silica destroy the longrange order of adsorbed argon and lower its solidific...

2008-01-01

76

Site occupancies in ternary C15 ordered Laves phases  

Energy Technology Data Exchange (ETDEWEB)

Site occupancies in three C15-structured AB{sub 2}(X) Laves phases have been determined by Atom Location by CHanneling Enhanced MIcroanalysis (ALCHEMI). In NbCr{sub 2}(V), the results were consistent with exclusive site occupancies of Nb for the A sublattice and Cr and V for the B sublattice. The B-site occupancy of V is not expected from atom size effects alone. In NbCr{sub 2}(Ti), the results were consistent with Ti partitioning mostly to the A sites with some anti-site defects likely. In HfV{sub 2}(Nb), the results were consistent with Nb partitioning between the A and B sites. The results of the ALCHEMI analyses of these ternary C15 Laves phase materials will be discussed with respect to previously determined phase diagrams and first-principles total energy and electronic structure calculations.

1996-12-31

77

Occurence of active layer optical properties on some Lasing characteristics dye-doped Ch LC  

CERN Document Server

Effect of a planar texture quality and its thickness on lasing spectrums and thresholds in dye-doped cholesteric liquid crystal (CLC) of steroid type is explored. Transition from the qualitative planar texture to the poor texture quality is accompanied by change of characteristic mode structures and by shift of barycentre in the long-wave side and the considerable growth of the lasing threshold. It is found that in the CLC texture created by substrates with perpendicular directions of orientation the stable single-mode lasing takes place. The nature of oscillated modes in such texture is caused by phase jump. The gained results show that in steroid CLC, unlike induced one, lasing spectrums is possible to feature with the coupled wave model. Key words: steroidal cholesteric liquid crystal, distributed feedback lasing, oscillation thresholds, phase defect of periodical structure, transmission and lasing spectra

2010-01-01

78

New sealant for nuclear power station premises of emergency location  

International Nuclear Information System (INIS)

When operating a nuclear power plant the necessity arise to eliminate various defects of building constructions, to seal joints and transitional elements. The authors present data concerning the production of a sealing composition made of epoxy resin and used for NPP premises of emergency location. Analytical relations are presented between the properties of the composition (adhesion strength, water absorption and others) and its structure. Physical, mechanical and thermal properties and structural peculiarities are determined in the process of interaction between the filling and binding agents. The composition sustains sealing properties under environmental conditions at he presence of an air - vapour mixture with 160 degrees C"o temperature and 0.3 MPa surplus pressure. (author).

79

Effect of milling process on the core-shell structures and dielectric properties of fine-grained BaTiO3-based X7R ceramic materials  

British Library Electronic Table of Contents (United Kingdom)

Fine-grained BaTiO3-based X7R ceramic materials were prepared and the effects of milling process on the core-shell structures and dielectric properties were investigated using scanning electron microscope, transmission electron microscope, and energy dispersive spectroscopy (EDS). As the milling time extends, the dielectric constant of the ceramics increases, whereas the temperature coefficient of capacitance at 125degreeC drops quickly. The changes in dielectric properties are considered relevant to the microstructure evolution caused by the milling process. Defects on the surface of BaTiO3 particles increase because of the effects of milling process, which will make it easier for additives to diffuse into the interior grains. As the milling time increases, the shell region gets thicker a...

2009-01-01

80

Degredation of superconductive properties in type A 15 compounds after irradiation  

International Nuclear Information System (INIS)

The influence of irradiation with 2.6 MeV H and He nuclei on the superconducting properties (critical temperature Tsub(c), critical current Isub(c)) of the intermetallic compound Nb_3Sn was studied. Irradiation led to a significant lowering of Tsub(c), while Isub(c) is increasing with the radiation dose. This is assumed to be due to the formation of active pinning centres in the lattice. There is a fast drop of Isub(c) after a peak value has been reached. Annealing of the samples (600-1,000"0C) led to an almost complete recovery of the initial value of Tsub(c). X-ray diffraction showed that irradiation causes considerable distortions of the lattice while the A15 crystal structure is retained. The causes of the radiation effects related to structural defects are discussed. (GSCH).

81

Atomistic analysis of defect evolution and transient enhanced diffusion in silicon  

International Nuclear Information System (INIS)

Kinetic Monte Carlo simulations are used to analyze the ripening and dissolution of small Si interstitial clusters and #left brace#113#right brace# defects, and its influence on transient enhanced diffusion of dopants in silicon. The evolution of Si interstitial defects is studied in terms of the probabilities of emitted Si interstitials being recaptured by other defects or in turn being annihilated at the surface. These two probabilities are related to the average distance among defects and their distance to the surface, respectively. During the initial stages of the defect ripening, when the defect concentration is high enough and the distance among them is small, Si interstitials are mostly exchanged among defects with a minimal loss of them to the surface. Only when defects grow to large sizes and their concentration ...

2003-07-15

82

Hardness and defect structures in EC316LN austenitic alloy irradiated under a simulated spallation neutron source environment using triple ion-beams  

Energy Technology Data Exchange (ETDEWEB)

For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% ...

2000-04-01

83

Hardness and defect structures in EC316LN austenitic alloy irradiated under a simulated spallation neutron source environment using triple ion-beams  

International Nuclear Information System (INIS)

For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe"+, 360 keV He"+, and 180 keV H"+ simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% elongation) was maintained ...

2000-04-01

84

Growth of tailored sillenite photorefractives for optical correlation  

Science.gov (United States)

Photorefractives, in general, are among the most promising materials solutions to real time optical correlation. Applications include military target recognition and civilian robotic vision. Crystals of sillenite structure photorefractives, Bi12XO20, where X equals Si, Ge, or Ti, have been grown by melt techniques and in the case of bismuth silicon oxide (BSO) and bismuth titanium oxide (BTO) by the hydrothermal method of high-temperature/high-pressure solution growth. The two growth methods are discussed and crystals grown by the two methods are compared in this paper. Optical absorption and TSC studies show that hydrothermal BSO is essentially free of the native antisite Bi defect which usually acts as a donor. These studies also show that the trap density is greatly reduced in hydrothermal material. Preliminary experiments show that hydrothermal BTO crystals have improved properties over melt grown samples. Al and P act as donors and ...

1995-06-01

85

Effect of oxide treatment at the microcrystalline tunnel junction of a-Si:H/a-Si:H tandem cells  

Energy Technology Data Exchange (ETDEWEB)

The electrical transport taking place in the {mu}c-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO{sub 2} plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic {mu}c-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n){mu}c-Si/oxide/(p){mu}c-Si and (b) (n){mu}c-Si/(i){mu}c-Si/(p){mu}c-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) {mu}c-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel junction. The ...

2000-05-01

86

Application of DLTS method to investigation of deep defect centers in epitaxial layers of multicomponent A"I"I"I-B"V compounds  

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)

87

Influence of defects in compound single crystals on the critical angle of planar channeling  

Energy Technology Data Exchange (ETDEWEB)

The theoretical treatment of the relation between the critical angle of planar channeling and the characteristics of crystal lattice defects is carried out. The predictions are made about some typical forms of the critical angle dependence on the mean-square static displacement produced by defects, and then these predictions are detailed for the cases of homogeneous disordering, spherical clusters of point defects and dislocation loops. Analytical results are supported by the exact computer calculations for the defects in the intermetallic A-15 compounds.

1985-01-01

88

The imaging findings of small({<=}15mm) portal defects in the liver on CT arterial portography : evaluation with CT hepatic arteriography and lipiodol CT  

Energy Technology Data Exchange (ETDEWEB)

To assess the malignant potential of small({<=}15mm) portal defects seen on CT arterial portography, the findings of CT hepatic arteriography and lipiodol CT were reviewed. In 91 patients who underwent both CTAP and CTHA, small portal defects were reviewed for frequency, multiplicity and location. We prospectively evauluated changes in the size and enhancement pattern of malignant lesions on follow up CT according to density on CTHA, location, lipiodol deposits on lipiodol CT, and multiplicity. Among the 91 patients, 102 small defects were defected in 42 patients(46%). Small portal defects were benign, malignant, and of undetermined malignant potential in 77%, 20% and 3% of cases, respectively. Small portal defects that were hyperattenuated on CTHA, and lipiodol deposits on lipiodol CT, were malignant in 42% and 70% of cases, respectively. Location and ...

1999-05-01

89

Multiple neural tube defects in the same patient with no neurological deficit  

UK PubMed Central (United Kingdom)

Congenital deformities involving the coverings of the nervous system are called neural tube defects (NTDs). NTD can be classified as neurulation defects, which occur by stage 12, and postneurulation...Full Text Available

2010-01-01

90

Echocardiographic assessment and percutaneous closure of multiple atrial septal defects  

UK PubMed Central (United Kingdom)

Atrial septal defect closure is now routinely performed using a percutaneous approach under echocardiographic guidance. Centrally located, secundum defects are ideal for device closure but there is...Full Text Available

91

Association between a specific apolipoprotein B mutation and familial defective apolipoprotein B-100.  

UK PubMed Central (United Kingdom)

Familial defective apolipoprotein (apo) B-100 is a genetic disease that leads to hypercholesterolemia and to an increased serum concentration of low density lipoproteins that bind defectively to the...Full Text Available

1989-01-01

92

Half-Heusler phase related structural perturbations near stoichiometric composition FeZnSb  

International Nuclear Information System (INIS)

Half-Heusler phases XYZ (Pearson symbol cF12) are chemically versatile and rich in physical properties. The half-Heusler phase in the Fe-Zn-Sb ternary system was reported in the year 2000. In this work, two new ternary phases are identified in the vicinity of the equiatomic composition FeZnSb in the same system: Fe1-xZnSb (tetragonal, space group P4/nmm, Pearson symbol tP6-?, Z=2: a=4.1113(6) A, c=6.0127(12) A for x=0.08 (1), and a=4.1274(6) A, c=6.0068(12) A for x=0.12 (2)); and Fe7.87Zn6.72Sb8 (Fe0.98Zn0.84Sb) (3) (cubic, space group Fm-3m, Pearson symbol cF96-?, Z=4, a=11.690(13) A). 1 and 2 crystallize in the PbFCl-type structure, and 3 adopts a unique 2x2x2 supercell of a normal half-Heusler structure. The structures of both the tetragonal and cubic phases can be described as assemblies of half-Heusler structure related subunits. Electrical resistivity measurement on the pure sample of 2 shows it ...

2011-05-01

93

Implantation processing of Si: A unified approach to understanding ion-induced defects and their impact  

Energy Technology Data Exchange (ETDEWEB)

A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are ...

1997-05-01

94

Transplantation of engineered bone tissue using a rotary three-dimensional culture system.  

Science.gov (United States)

Bone is a complex, highly structured, mechanically active, three-dimensional (3-D) tissue composed of cellular and matrix elements. We previously published a report on in situ collagen gelation using a rotary 3-D culture system (CG-RC system) for the construction of large tissue specimens. The objective of the current study was to evaluate the feasibility of bone tissue engineering using our CG-RC system. Osteoblasts from the calvaria of newborn Wistar rats were cultured in the CG-RC system for up to 3 wk. The engineered 3-D tissues were implanted into the backs of nude mice and calvarial round bone defects in Wistar rats. Cell metabolic activity, mineralization, and bone-related proteins were measured in vitro in the engineered 3-D tissues. Also, the in vivo histological features of the transplanted, engineered 3-D tissues were evaluated in the animal models. We found that metabolic activity increased in the engineered 3-D tissues during ...

2007-03-11

95

Three novel mutations responsible for Cockayne syndrome group A  

International Nuclear Information System (INIS)

Cockayne syndrome (CS) is a rare autosomal recessive disease, which shows diverse clinical symptoms such as photosensitivity, severe mental retardation and developmental defects. CS cells are hypersensitive to killing by ultraviolet (UV)-irradiation and defective in transcription-coupled repair. Two genetic complementation groups in CS (CS-A and CS-B) have been identified. We analyzed mutations of the CSA gene in 5 CS-A patients and identified 3 types of mutations. Four unrelated CS-A patients (CS2OS, CS2AW, Nps2 and CS2SE) had a deletion including exon 4, suggesting that there is a founder effect on the CSA mutation in Japanese CS-A patients. Patient CS2SE was a compound heterozygote for this deletion and an amino acid substitution at the 106th glutamine to proline (Q106P) in the WD-40 repeat motif of the CSA protein, which resulted in a defective nucleotide excision repair. Patient Mps1 had a large deletion in the ...

2003-02-01

96

Molecular dynamics studies of silicon ion implantation  

Energy Technology Data Exchange (ETDEWEB)

Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the resulting damage ...

1994-12-31

97

Design variables for mechanical properties of bone tissue scaffolds.  

Science.gov (United States)

The reconstruction of segmental defect in long bone is a clinical challenge. Multiple surgeries are typically required to restore the structure and function of the affected defect site. In order to overcome this defect a biodegradable bone tissue engineering scaffold is used. This scaffold acts as a carrier of proteins and growth factors, while also supporting the load that the bone would normally sustain, until the natural bone can regenerate in its place. Work was done to optimize an existing solid free-form scaffold design. The goal of the optimization was to increase the porosity of the scaffold while maintaining the strength of a previously-tested prototype design. With this in mind, eight new designs were created. These designs were drawn using CAD software and then through the use of finite element analysis the theoretical ultimate compressive strength of each design was obtained. Each scaffold ...

2006-01-01

98

WITNESSING THE KEY EARLY PHASE OF QUASAR EVOLUTION: AN OBSCURED ACTIVE GALACTIC NUCLEUS PAIR IN THE INTERACTING GALAXY IRAS 20210+1121  

International Nuclear Information System (INIS)

We report the discovery of an active galactic nucleus (AGN) pair in the interacting galaxy system IRAS 20210+1121 at z = 0.056. An XMM-Newton observation reveals the presence of an obscured (N _H #approx# 5 x 10"2"3 cm"-"2), Seyfert-like (L _2_-_1_0_k_e_V = 4.7 x 10"4"2 erg s"-"1) nucleus in the northern galaxy, which lacks unambiguous optical AGN signatures. Our spectral analysis also provides strong evidence that the IR-luminous southern galaxy hosts a Type 2 quasar embedded in a bright starburst emission. In particular, the X-ray primary continuum from the nucleus appears totally depressed in the XMM-Newton band as expected in the case of a Compton-thick absorber, and only the emission produced by Compton scattering ('reflection') of the continuum from circumnuclear matter is seen. As such, IRAS 20210+1121 seems to provide an excellent opportunity to witness a key, early phase in the quasar evolution predicted by the theoretical models of quasar activation by ...

2010-10-20

99

The viscous overstability, nonlinear wavetrains, and finescale structure in dense planetary rings  

CERN Document Server

This paper addresses the fine-scale axisymmetric structure exhibited in Saturn's A and B-rings. We aim to explain both the periodic microstructure on 150-220m, revealed by the Cassini UVIS and RSS instruments, and the irregular variations in brightness on 1-10km, reported by the Cassini ISS. We propose that the former structures correspond to the peaks and troughs of the nonlinear wavetrains that form naturally in a viscously overstable disk. The latter variations on longer scales may correspond to modulations and defects in the wavetrains' amplitudes and wavelength. We explore these ideas using a simple hydrodynamical model which captures the correct qualitative behaviour of a disk of inelastically colliding particles, while also permitting us to make progress with analytic and semi-analytic techniques. Specifically, we calculate a family of travelling nonlinear density waves and determine their stability properties. ...

2009-01-01

100

Radiation damage and hardening of molybdenum in 29 MeV alpha particle straggling zone  

International Nuclear Information System (INIS)

Technique, allowing to investigate straggling zone (full braking) from high-energy charged particles in detail, is described. Experimental results on investigation of efective structure, created in polycrystalline molybdenum (99.97%) within 29 MeV alpha-particles straggling zone for fluences from 3.8x10"1"9 up to 3.7x10"2"1 #alpha#/m"2 by methods of microhardness (H_#mu#, X-ray structural analysis (#DELTA#a/a) and transparent electron microscopy (TEM), are presented. It is determined, that for doses from 3.8x10"2"0 #alpha#/m"2 and higher, at #approx#6 MeV energy, molybdenum ''softening'' is observed, H_#mu# curve within straggling zone is well described by alloyage calculated profile. #DELTA#a/a measurements within straggling zone are well described by damage profile. TEM-investigations have shown the developed defective structure even within molybdenum ''softening'' range.

101

Kinetics of the stress induced phase transition in quartz by real-time neutron scattering  

International Nuclear Information System (INIS)

Complete text of publication follows. The stability regime of the incommensurate phase of quartz is influenced by uniaxial stress. Hence, the phase transition can be induced under isothermal conditions by the application of external mechanical forces. Using real-time neutron scattering the time evolution of structural changes is investigated id detail during stress variations. The time dependent behaviour of the satellite reflection is compared with that one of the fundamental Bragg reflection which - via primary extinction - gives information about the perfection of the crystal. On increasing stress the perfection of the lattice is destroyed immediately while the modulated structure is built up with a delay of about 1 s. Decreasing the stress leads to a reverse behaviour. Moreover, there is evidence that under periodical load residual non-relaxed strain fields survive leading to a different temperature dependence as compared to static ...

1999-09-01

102

Hardening of ion-irradiated A533B steels investigated with nanoindentation technique  

International Nuclear Information System (INIS)

Neutron irradiation embrittlement of reactor pressure vessel (RPV) steels is one of the critical issues on aging management for long term operation of nuclear power plants. Mechanistic understanding of embrittlement is a key to accurate prediction of embrittlement, especially after long term operation where the mechanical test data are sparse. Since matrix hardening is the source of the embrittlement, we focus on matrix hardening of A533B bainitic pressure vessel steel. Bainitic matrix is composed of lath structure made by ferrite and carbides, therefore it is important to understand how this structure affects hardening behavior, and to understand irradiation response of each phase. As the typical dimension of lath structure of A533B is about one micron, nanoindentation technique is suitable for the estimation of hardening of each phase. MV ion accelerators were used for controlled irradiation because MeV ion irradiation ...

2008-10-13

103

Electrochemical synthesis of nanostructured porous materials using liquid crystal and colloidal templates and their magnetic and optical properties  

CERN Document Server

material, and that these magnetic properties vary systematically with the diameter of the spherical pores within the films. A new oscillation effect has been observed for the coercivity of macroporous Ni sub 8 sub 0 Fe sub 2 sub 0 film with different pore layer thickness. sphere templates, the resulting films show well-formed, regular, two- and three-dimensional macroporous networks consisting of spherical pores arranged in a highly ordered face centred cubic (fee) structure. The spherical voids are interconnected by a series of smaller windows that form an open porous structure embedded in the material framework. The diameter of the spherical pores can be precisely changed over the range from 200 to 1000 nm by changing the diameter of the latex spheres used to form the templates. The resulting macroporous material structures are robust, self-supported, dense, polycrystalline, uniform and free from filling ...

2002-01-01

104

Effects of post-irradiation annealing in alpha-particle bombarded molybdenum  

International Nuclear Information System (INIS)

Structural variations in 39-MeV alpha-particle irradiated (Tsub(irr) = 60 deg C) polycrystalline molybdenum during post-irradiation annealing were studied by X-ray and TEM methods. Despite the high density of irradiation induced defects in the structure of the specimen X-ray measurements showed zero relative lattice parameter change after an irradiation dose of 1.1 x 10"-_2 dpa. However, during the annealing #delta#a/a was changed in the positive range, exhibiting two peaks - at 100 and 300 deg C - whereas the damage structure detected by TEM indicated no changes. Analysis of the results leads to the conclusion that in the range 100 to 250 deg C migration of isolated vacancies and their annihilation at interstitial clusters as well as possible formation of new vacancy clusters occur. The second peak on the #delta#a/a temperature dependence curve is related to the transformation (probably, thermal ...

105

AFM and STM studies of passive films formed on stainless steels. Applications to stress corrosion cracking; Etudes par microscopie a champ proche des films passifs formes sur les aciers inoxydables. Applications a la corrosion sous contrainte  

Energy Technology Data Exchange (ETDEWEB)

Modelization of crack propagation and theoretical prediction of rupture are the two main objectives of researchers in stress corrosion cracking. Nevertheless, to reach this aim, the behavior of the passive film which appears spontaneously on the substrate in contact with an environment has to be known. This structural and mechanical characterization is all the more difficult because the number of parameters is important: crystallinity rate, defects concentration, thickness (about a few nanometers), electric field, chemical composition (a lot of oxides are present), peeling layers (atomic structure for example) and some hypothesis can be made about their multi-layer structure, their chemical composition or their epitaxial character... Passive films formed on 316L or 304L stainless steels in different aqueous solutions (in ambient air, in MgCl{sub 2} at 117 deg. C...) have been studied and some important ...

1995-12-01

106

AFM and STM studies of passive films formed on stainless steels. Applications to stress corrosion cracking  

International Nuclear Information System (INIS)

Modelization of crack propagation and theoretical prediction of rupture are the two main objectives of researchers in stress corrosion cracking. Nevertheless, to reach this aim, the behavior of the passive film which appears spontaneously on the substrate in contact with an environment has to be known. This structural and mechanical characterization is all the more difficult because the number of parameters is important: crystallinity rate, defects concentration, thickness (about a few nanometers), electric field, chemical composition (a lot of oxides are present), peeling layers (atomic structure for example) and some hypothesis can be made about their multi-layer structure, their chemical composition or their epitaxial character... Passive films formed on 316L or 304L stainless steels in different aqueous solutions (in ambient air, in MgCl_2 at 117 deg. C...) have been studied and some important ...

1995-06-01

107

Diffusion in silicon isotope heterostructures  

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and ...

2004-05-14

108

Weld integrity of the superconducting cable aluminium jackets of W7-X  

British Library Electronic Table of Contents (United Kingdom)

The Wendelstein 7-X (W7-X) modular stellarator is under construction at the Max-Planck-Institut fur Plasmaphysik in Greifswald, Germany. The W7-X magnet system contains 70 coils made up from helium cooled superconducting cables in aluminium alloy (EN AW-6063) jackets. Several hundred connections of the jacket to the cable joints are made by aluminium-to-aluminium welds. Due to geometrical and thermal boundary conditions these welds cannot be accomplished free from defects. Microscopic analyses of the welds show that a variety of small flaws such as cracks and pores develop during welding. The welds have thus to be dimensioned accordingly, and appropriate weld qualification, investigation and testing has to be done in order not to jeopardise the structural integrity and leak tightness. The ...

2009-01-01

109

The effects of curvature and surface heterogeneity on the adsorption of water in finite length carbon nanopores: a computer simulation study  

British Library Electronic Table of Contents (United Kingdom)

The effects of pore curvature and surface heterogeneity on the adsorption of water on a graphitic surface at 298 K were investigated using a Grand Canonical Monte Carlo (GCMC) simulation. Slit and cylindrical pores are used to study the curvature effects. To investigate the surface heterogeneity the functional group and the structural defect on the surface were specifically considered. The hydroxyl group (OH) is used as a model for the functional group and the water potential model proposed by Muller et al. is used to calculate the water interaction. For the homogeneous cylinder, the pore filling occurs at a pressure lower than the saturation pressure of the water model, while it is greater in the case of homogeneous slit pore. The size of hysteresis loop is more sensitive to the length of...

2008-01-01

110

The assessment of defects in thin shells subject to secondary stress  

International Nuclear Information System (INIS)

This paper is concerned with the fracture analysis of thin cylindrical shells subject to secondary bending stresses with some degree of elastic follow-up. A P.Y.F.M. failure assessment route is utilised for an initial investigation. Results are presented graphically and indicate the differences obtained by considering the stresses as primary or secondary in nature. The Jsup(*) contour integral is computed from the results of a non-linear finite element analysis of a thermally loaded cracked cylinder. Comparison is made between Jsup(*) and the P.Y.F.M. failure criteria demonstrating the degree of conservatism in the latter. It is observed that LEFM may be appropriate for moderate load levels but that the elastic follow-up of the structure causes enhancement of Jsup(*) for higher loads, at which stage LEFM becomes non-conservative. (orig.).

1981-08-21

111

Studies on the superconducting properties of A-15 type intermetallic compounds  

International Nuclear Information System (INIS)

The influence of 3d-transition metal impurities on the superconducting properties of the A-15 compounds V_3Si and V_3Ga have been investigated. In the case of V_3Si, the Fe impurities replacing V were found to have a local moment. A compensation effect was found in this case, resulting in a 20KOe increase in the upper critical field at dilute concentrations of Fe. It was demonstrated that long range order V_3Ga possessed higher transition temperature and upper critical field than found hitherto. Investigations on Nb_3Ge/sub 1-x/Ga/sub x/ films obtained by chemical vapor deposition has clearly shown the relation between the transition temperature and structural characteristics. The influence of generalized defects on the superconducting properties in A-15 type Nb_3X compounds has been discussed.

112

Recycling flow control device for a nuclear reactor  

International Nuclear Information System (INIS)

Object: To permit a valve operation test to be periodically made during plant operation without causing variations in plant power by detecting flow control valve defect on the basis of a valve aperture alteration instruction. Structure: Step signals which are equal in absolute value and opposite in sign are coupled to the input side of flow controllers provided on the recycling loops of two or more recycling flow control systems. With these inputs the aperture of the flow control valve on one side is increased (or reduced) while the aperture of the valve on the other side is reduced (or increased). As a result, the recycling flow rate in the loop on one side is increased (or reduced) while that on the other side is reduced (or increased). Whether the valve is normally operating or not is confirmed by checking the recycling flow rate and valve aperture. (Nakamura, S.).

113

Properties of the passive films formed on ferritic stainless steels in Cl/sup -/ Solutions  

Energy Technology Data Exchange (ETDEWEB)

The pitting resistance of Fe-Cr and Fe-Cr-Mo alloys has been correlated with characteristics of the passive films analyzed by Auger electron spectroscopy (AES). Increased film protectiveness as a result of increased Cr in the alloy can be directly attributed to Cr enrichment of the film and decreased film thickness. Increased Mo in the alloy or passivation at noble potentials promotes passive film resistance to breakdown, but neither does much to change the macrocharacteristics of the film. Rather, it is suggested that the roles of alloying and/or passivation conditions are related to the susceptibility and distribution of weak points of the film. In solutions in which pitting occurs, chloride is generally not incorporated into the film, suggesting that the role of halides is to interact with weak points of the film at the solution/film interface. At 260/sup 0/C, the films are much thicker and likely to be much more defective in structure than ...

1986-10-01

114

Preparation of biodegradable PLA/PLGA membranes with PGA mesh and their application for periodontal guided tissue regeneration  

International Nuclear Information System (INIS)

A biodegradable polylactic acid (PLA)/poly(glycolide-co-lactide) copolymer (PLGA) membrane with polyglycolic acid (PGA) mesh was prepared to aid the effective regeneration of defective periodontal tissues. The microporous membrane used in this study consists of biodegradable polymers, and seems to have a structure to provide appropriate properties for periodontal tissue regeneration. Based on the albumin permeation test, it is known that the biodegradable membrane exhibits the suitable permeability of nutrients. The membrane maintained its physical integrity for 6-8 weeks, which could be sufficient to retain space in the periodontal pocket. Cell attachment and cytotoxicity tests were performed with respect to the evaluation of biocompatibility of the membrane. As a result, the membrane did not show any cytotoxicity. The safety and therapeutic efficacies of the biodegradable membranes were confirmed in animal tests.

2009-10-01

115

Nanostructuring and hardening of LiF crystals irradiated with 3?15 MeV Au ions  

British Library Electronic Table of Contents (United Kingdom)

Modifications of the structure and mechanical properties in LiF crystals irradiated with MeV-energy Au ions have been studied using nanoindentation, atomic force microscopy and optical spectroscopy. The nanostructuring of crystals under a high-fluence irradiation (above 1013 ions/cm2)?was?observed. Nanoindentation tests show a strong ion-induced increase of hardness (up?to 150?200%), which is related to the high volume concentration of complex color centers, defect aggregates, dislocation loops and grain boundaries acting as strong barriers for dislocations. From the?depth profiling of the hardness and energy loss it follows that both nuclear and electronic stopping mechanisms of MeV Au ions contribute to the creation of damage and hardening. Whereas the electronic stopping is dominating i...

2011-01-01

116

Multiscale morphology analysis and its application to fault diagnosis  

Science.gov (United States)

A novel approach to fault diagnosis is proposed using multiscale morphology analysis to extract impulsive features from the signals with strong background noise. Multiscale morphology is applied to one-dimensional signal by defining both the length and height scales of structuring elements (SEs). A local-peak-value based adaptive algorithm is also introduced. The new approach makes the selection of SEs more transparent and is independent of empirical rules. Both simulated impulsive and vibration signals of two defective roller bearings are employed to validate the proposed algorithm. The roller bearing faults presented in the validation include both inner and outer race faults. The test results show that the multiscale morphology analysis is effective and robust to extract morphological features.

2008-04-01

117

Ion beam induced charge imaging of epitaxial GaN detectors  

Energy Technology Data Exchange (ETDEWEB)

We report the use of ion beam induced charge imaging to characterise the charge signal uniformity of epitaxial gallium nitride radiation detectors. The detectors were fabricated from 2 {mu}m thick semi-insulating gallium nitride, grown by MOCVD on a sapphire substrate. A carrier concentration of 1.4x10{sup 15} cm{sup -3} was measured using capacitance-voltage measurements. Ion beam induced charge imaging was carried out with a 2 MeV alpha particle beam focussed to a 3 {mu}m diameter and raster scanned across the device. The resulting ion beam images show excellent charge signal uniformity in this material with no evidence of material defects or polycrystalline structure on the micrometer length scale. No evidence of charge signal trapping was observed in these devices.

2004-09-21

118

Investigation of changes in hyperfine interaction and Debye-Waller-factor by #alpha#-radiation self damage in "2"4"1Am metal  

International Nuclear Information System (INIS)

The Moessbauer emission spectrum of "2"4"1Am metal was investigated for influences of radiation self damage. Samples were kept continuously for 230 h at 4.2 K and spectra were taken each 10 to 20 h. No change in f-factor was observed, while the linewidth increased monotonically and reached saturation after approximately 180 h. The original width could be reproduced by a brief warming to room temperature. The increase in width reflects the change in quadrupole interaction due to the creation of lattice defects. The constancy of the f-factor indicates that the basic crystalline structure is retained.

119

III-phosphides heterojunction solar cell interface properties from admittance spectroscopy  

International Nuclear Information System (INIS)

GaInP solar cell interfaces were characterized by admittance spectroscopy. Admittance spectroscopy is shown to be sensitive to the band structure at the heterojunction interfaces. In particular, a correlation between activation energy of the capacitance step in a capacitance versus temperature plot and effective potential barrier for majority carriers is demonstrated, indicating a new method for the determination of potential barriers at heterointerfaces. Using this technique, the effective potential barrier for holes at the p-Al_0_._5_3In_0_._4_7P/p-GaAs interface is found to be equal to 0.6 eV. Effects of interface defects and spreading resistance in the emitter of solar cells are illustrated and discussed.

2009-08-21

120

Capturing recrystallization of metals with a multi-scale materials model  

Energy Technology Data Exchange (ETDEWEB)

The final report for a Laboratory Directed Research and Development project entitled, ``Capturing Recrystallization of Metals in a Multiscale Materials Model'' is presented. In this project, deformation and recrystallization processes have been followed experimentally and theoretically in order to incorporate essential mechanisms from the defect (dislocation) and grain size length scales. A nonlinear rotational gradient theory has been developed which enables the incorporation of microstructural parameters. The evolution of these parameters during deformation and recrystallization has been characterized qualitatively and quantitatively, applying various electron optic techniques ranging over several length scales. The theoretical and experimental framework developed is general. It has been exemplified by an application to recrystallization in single crystals and bicrystals of aluminum. The recrystallization process has been modeled using a 3-D ...

2000-04-01

121

Atomic scale models of Ion implantation and dopant diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

1999-03-01

122

Analysis of the bullwhip effect in multi-product, multi-stage supply chain systems-a simulation approach  

British Library Electronic Table of Contents (United Kingdom)

This research aims to develop a simulation approach based on system dynamics modelling (SDM) and adaptive network based fuzzy inference system (ANFIS) for quantifying and reducing the bullwhip effect in a multi-product, multi-stage supply chain. The proposed model is comprised of three groups of variables influencing the bullwhip effect, namely the structure of a supply chain network, supply chain contributions (ordering process in regular situation or when a supplier has a promotion or shortage gaming) and supply chain performances (the number of defects and ordering lead time). As a result, a two layer simulation model is developed with three generic models. The flexibility of this proposed approach is its ability to model various types of ordering policies which are basic inventory poli...

2010-01-01

123

Atomic interactions between plutonium and helium.  

Energy Technology Data Exchange (ETDEWEB)

An essential issue in gallium (Ga)-stabilized fcc-phase plutonium ({delta}-Pu) is the formation of helium (He) voids and bubbles emanating from the radiolytic decay of the Pu. The rate of formation of He voids and bubbles is related to the He-defect formation energies and their associated migration barriers. The size and shape distributions of the bubbles are coupled to these critical migration processes. The values of the defect formation energies, internal pressure, and migration barriers can be estimated from atomistic calculations. Complicating this picture is the destruction of He-filled voids and bubbles by subsequent radiolytic decay events. The present study concerns the construction of the necessary potential energy surfaces for the Pu-He and He-He interactions within the modified embedded atom method (MEAM). Once fully tested, the potentials will be used to estimate the He-defect formation energies and barriers to ...

2002-01-01

124

Scattered radiation effect on the defect image in high-energy bremsstrahlung introscopy  

International Nuclear Information System (INIS)

Results of the evaluation of the scattered radiation effect on the image of defects in examined products are given. The formula is suggested which characterizes the image of defects on a scintillation screen as well as accumulation factors are calculated by the Monte-Carlo method. Values of fluctuations of absorbed energy in the screen used for the evaluation of sensitivity are experimentally obtained. The effect of high-energy bremsstrahlung on the defect detection is analyzed.

126

New examples of defective secant varieties of Segre-Veronese varieties  

CERN Document Server

We prove the existence of defective secant varieties of three-factor and four-factor Segre-Veronese varieties embedded in certain multi-degree. These defective secant varieties were previously unknown and are of importance in the classification of defective secant varieties of Segre-Veronese varieties with three or more factors.

2011-01-01

128

Induced radiation during scattering of channeled electrons and positrons by point defects  

Energy Technology Data Exchange (ETDEWEB)

In scattering of channeled particles by point defects and in emission of gamma rays in the spontaneous-radiation spectral region conditions are attained where the momentum transferred to the defect is taken up by the crystal as a whole. This leads to coherent and interference effects in the radiation from the crystal defects. When the longitudinal momentum transferred is zero, an induced radiation effect appears in the transitions between the states of transverse motion.

1984-12-01

131

Local chromatin structure of heterochromatin regulates repeatedDNA stability, nucleolus structure, and genome integrity  

Energy Technology Data Exchange (ETDEWEB)

Heterochromatin constitutes a significant portion of the genome in higher eukaryotes; approximately 30% in Drosophila and human. Heterochromatin contains a high repeat DNA content and a low density of protein-encoding genes. In contrast, euchromatin is composed mostly of unique sequences and contains the majority of single-copy genes. Genetic and cytological studies demonstrated that heterochromatin exhibits regulatory roles in chromosome organization, centromere function and telomere protection. As an epigenetically regulated structure, heterochromatin formation is not defined by any DNA sequence consensus. Heterochromatin is characterized by its association with nucleosomes containing methylated-lysine 9 of histone H3 (H3K9me), heterochromatin protein 1 (HP1) that binds H3K9me, and Su(var)3-9, which methylates H3K9 and binds HP1. Heterochromatin formation and functions are influenced by HP1, Su(var)3-9, and the RNA interference (RNAi) pathway. My thesis project ...

2007-05-05

132

Characterization of surface defects after flanging of metallic sheets  

British Library Electronic Table of Contents (United Kingdom)

This paper deals with surface defects of automobile outer panels, which alter significantly the vehicle quality. Such defects occur during springback, after forming or flanging steps, and are characterized by concave depression of small amplitude over the convex shape of the part. The aim of this work is to reproduce at the laboratory scale a surface defect that occurs after flanging on a geometry similar to a door upper corner. A dedicated device has been designed in order to generate small size surface defects during flanging of metallic thin sheets. The outer surface of the sample was digitalized and the spatial geometry of the defect was evaluated from curvature change along 2D profiles. This study shows that the flanging height does not influence significantly the surface defect geome...

2011-01-01

133

A study of palladium silicide formed by focused ion beam implantation of palladium ions  

Science.gov (United States)

The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly few defect ...

1989-01-01

134

A study of palladium silicide formed by focused ion beam implantation of palladium ions  

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. A heat transfer model ...

135

The special features of equilibrium adsorption of argon on homogeneous and inhomogeneous surfaces  

Science.gov (United States)

Comparative patterns of equilibrium adsorption of argon on the surface of graphitized thermal carbon black (GCB) and the inhomogeneous surfaces of nongraphitized carbon black and silica at 77 and 87.3 K were considered. It was shown that argon acquires the properties of a special phase with a layered structure and exhibits two-dimensional phase transitions with the formation of crystal-like layers near the homogeneous surface of GCB even at a temperature exceeding the triple point. However, already at a distance of three-four molecular diameters from the surface, adsorbed argon behaves as a bulk phase in a weak external field. The defect surface of nongraphitized carbon black and the amorphous surface structure of silica destroy the longrange order of adsorbed argon and lower its solidification temperature. Therefore, argon adsorbed at a temperature of 77 K, i.e., below the triple point, exhibits the properties of a ...

2008-12-01

136

Study of the electron paramagnetic resonance spectra of Zn(antipyrine)_2(NO_3)_2:VO"2"+  

International Nuclear Information System (INIS)

In this work, a full ligand-field energy matrix (10x10) diagonalization treatment for 3d"1 ions in tetragonal symmetry is developed on the basis of the two-s.o.-coupling-parameter model. Spin Hamiltonian parameters (g factors g_|_|, g_p_e_r_p_e_n_d_i_c_u_l_a_r and hyperfine structure constants A_|_|, A_p_e_r_p_e_n_d_i_c_u_l_a_r) of the tetragonal V"4"+ center in Zn(antipyrine)_2(NO_3)_2 are calculated from the complete energy matrix diagonalization method and the perturbation theory method. The calculated results from both methods are not only close to each other but also in good agreement with the experimental values. Furthermore, the compressed defect structure of V"4"+ center is discussed.

2010-08-01

137

Microstructure and magnetic properties of nanocrystalline Fe75Si20M5 (M = Al, B, Cr) powders  

International Nuclear Information System (INIS)

Nanocrystalline Fe75Si20M5 (M = Al, B and Cr) powders were synthesized by mechanical alloying in a planetary ball mill from high purity elemental powders. Evolution of non-equilibrium solid solutions of ?-Fe[Si,(Al, B, Cr)] with a nanocrystalline structure was accompanied by the introduction of a large number of dislocation defects in the course of the milling process. Fe sites get substituted by Si and M (M = Al, B, Cr) atoms during the milling process. The structural change and the resulting disorder are reflected in the changes in the lattice parameter and average magnetic moment of the powders milled for various time periods. The effective magnetic anisotropy increases linearly with the milling time. An increase in coercivity with increasing milling time was observed which could be attributed to the introduction of dislocations and the reduction in the powder particle size during milling. The presence of dislocations ...

2008-08-21

138

High resolution electron microscopy of interfaces in fcc materials  

Energy Technology Data Exchange (ETDEWEB)

Modern high-resolution electron microscopy (HREM) instruments, which are capable of a point-to-point resolution of better than 0.2 nm, have allowed atomic-scale observations of a variety of internal interfaces. The application of the HREM technique to fcc model systems for the purpose of addressing a number of interface issues will be examined in this paper. Atomic structure observations for heterophase interfaces of metal/metal and metal/metal-oxide systems as well as HREM studies of grain boundaries in NiO and Au will be discussed with emphasis on generic structural features and the role of the interface plane. Comparisons between observed interface structures and atomistic computer modeling results have shown agreements for some interfaces, as well as certain differences in others. A number of structural features are common to both metal and oxide grain boundaries, as well as certain heterophase ...

1990-08-01

139

Reduced boron diffusion under interstitial injection in fluorine implanted silicon  

International Nuclear Information System (INIS)

Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the range of the fluorine ...

2007-12-01

140

Luminescence of Strontianite (SrCO{sub 3}) from Strontian (Scotland, UK)  

Energy Technology Data Exchange (ETDEWEB)

An historic Strontianite-type specimen from Strontian, Scotland, UK, was characterized to broaden our knowledge on luminescence properties of common carbonates. These fibrous aggregates are Strontianite (Sr{sub x}Ca{sub 1-x}CO{sub 3}) with circa 6% of CaO, interfacial water, hydrosilicate anions and substitutional divalent cations, e.g., Ca{sup 2+}, Mn{sup 2+}, Fe{sup 2+} in structural Sr{sup 2+} positions. The specimen was analyzed by X-ray Fluorescence Spectrometry (XRF), Environmental Scanning Electron Microscopy coupled with an Energy Dispersive X-ray Spectroscopy (ESEM-EDS) probe, Spatially-resolved Cathodoluminescence under the Scanning Electron Microscope (SEM-CL), Differential-Thermal Analyses (DTA), Thermogravimetry (TG), Thermoluminescence (TL), Radioluminescence (RL) and High Resolution Spectra Thermoluminescence (3DTL), to gain an overview of the spectral emissions, the defect linkages were modified by heating from room temperature ...

2009-04-15

141

Diffusion modeling of ion implanted boron in Si during RTA: Correlation of extended defect formation and annealing with the enhanced diffusion of boron  

International Nuclear Information System (INIS)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...

142

Depth dependence of {l_brace}311{r_brace} defect dissolution  

Energy Technology Data Exchange (ETDEWEB)

A deep band of {l_brace}311{r_brace} defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the {l_brace}311{r_brace}-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The {l_brace}311{r_brace} defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the {l_brace}311{r_brace}-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.

2001-09-03

143

Depth dependence of #left brace#311#right brace# defect dissolution  

International Nuclear Information System (INIS)

A deep band of #left brace#311#right brace# defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the #left brace#311#right brace#-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The #left brace#311#right brace# defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the #left brace#311#right brace#-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.

2001-09-03

144

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of ...

1997-05-01

145

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon  

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left brace#311#right brace# ...

146

The use of long-term and seasonal trends of elemental compounds as an aid to the identification of sources of airborne pollutants  

Energy Technology Data Exchange (ETDEWEB)

New York City data indicate that seasonal and annual variations in dispersion-normalized air pollutant concentrations appear to accurately reflect changes in source emission patterns. The normalized concentrations make it possible to observe the impact of regulatory changes on ambient air quality without these impacts being obscured by meteorological fluctuations. It is found that numerical modeling techniques and regression analysis can be powerful tools for extracting information from large sets of air quality data. The use of differential, as opposed to absolute, pollutant concentration values will reduce artifact correlations caused by seasonal, weekly, or daily meteorological fluctuations and will permit more accurate estimation of the regression coefficients. This technique was successfully applied to a set of daily pollution measurements whose absolute concentrations were found not to yield a statistically significant fit by multiple regression.

1980-01-01

147

The use of long-term and seasonal trends of elemental compounds as an aid to the identification of sources of airborne pollutants  

International Nuclear Information System (INIS)

New York City data indicate that seasonal and annual variations in dispersion-normalized air pollutant concentrations appear to accurately reflect changes in source emission patterns. The normalized concentrations make it possible to observe the impact of regulatory changes on ambient air quality without these impacts being obscured by meteorological fluctuations. It is found that numerical modeling techniques and regression analysis can be powerful tools for extracting information from large sets of air quality data. The use of differential, as opposed to absolute, pollutant concentration values will reduce artifact correlations caused by seasonal, weekly, or daily meteorological fluctuations and will permit more accurate estimation of the regression coefficients. This technique was successfully applied to a set of daily pollution measurements whose absolute concentrations were found not to yield a statistically significant fit by multiple regression.

148

Spitzer Imaging of Herschel-ATLAS Gravitationally Lensed Submillimeter Sources  

CERN Document Server

We present physical properties of two submillimeter selected gravitationally lensed sources, identified in the Herschel Astrophysical Terahertz Large Area Survey. These submillimeter galaxies (SMGs) have flux densities > 100 mJy at 500 um, but are not visible in existing optical imaging. We fit light profiles to each component of the lensing systems in Spitzer IRAC 3.6 and 4.5 um data and successfully disentangle the foreground lens from the background source in each case, providing important constraints on the spectral energy distributions (SEDs) of the background SMG at rest-frame optical-near-infrared wavelengths. The SED fits show that these two SMGs have high dust obscuration with Av ~4 to 5 and star formation rates of ~100 M_sun/yr. They have low gas fractions and low dynamical masses compared to 850 um selected galaxies.

2010-01-01

149

Satellite monitoring of climatic factors regulating phytoplankton variability in the Arabian (Persian) Gulf  

British Library Electronic Table of Contents (United Kingdom)

Possible factors regulating phytoplankton variability in the Arabian (Persian) Gulf were analyzed on the basis of satellite observations and meteorological data (1997-2009), including remotely-sensed chlorophyll a concentration (CHL), sea surface temperature, wind, solar radiation, precipitation, and aerosols. Shallow waters of northwestern Gulf influenced by Shatt Al-Arab River discharge were more productive than open Gulf waters, although seasonal CHL patterns in this and other shallow regions looked unrealistic likely because the CHL signal was obscured by bottom reflection. Therefore our further analyses focused on the open Gulf waters, which show a subtropical seasonal CHL cycle with maximum in winter and minimum in spring-summer. This cycle, however, was decoupled from the seasonal e...

2010-01-01

150

All jobs are not created equal: Divergent indicators in the knowledge economy  

British Library Electronic Table of Contents (United Kingdom)

Univariate indicators such as employment are often used to benchmark economic growth at the local and regional levels. However, the tremendous technological and industrial changes in the U.S. economy in the second half of the twentieth century suggest this practice may be outdated. In fact, the singular use of univariate indicators to benchmark regional development may obscure a much richer and more complex web of economic processes. Given the potential complexities associated with regional benchmarking in the current global economy, this paper will explore the numerical differences in economic performance presented by popular univariate indicators of regional growth. Results demonstrate a univariate approach to benchmarking presents an incomplete snapshot of regional performance that is i...

2012-01-01

151

Tyrosine-derived polycarbonate membrane in treating mandibular bone defects. An experimental study  

UK PubMed Central (United Kingdom)

This study was designed to evaluate the suitability of a novel bioabsorbable material in treating bone defects. A poly(desaminotyrosyl-tyrosine-ethyl ester carbonate) (PDTE carbonate) membrane (thickness...Full Text Available

2006-10-22

152

The influence of tethered epidermal growth factor on connective tissue progenitor colony formation  

UK PubMed Central (United Kingdom)

Strategies to combine aspirated marrow cells with scaffolds to treat connective tissue defects are gaining increasing clinical attention and use. In situations such as large defects where initial...Full Text Available

2009-09-01

153

Point defects in superconductors  

Energy Technology Data Exchange (ETDEWEB)

The federating theme of superconductivity has given rise to a number of experimental studies of point defects in solids as different as transition metals (V, Nb, ...), A-15 compounds (V{sub 3}Si, Nb{sub 3}Ge, ...), or perovskite-like copper oxides. Some of these experiments are presented here. (orig.).

1989-12-01

154

Point defects in superconductors  

International Nuclear Information System (INIS)

The federating theme of superconductivity has given rise to a number of experimental studies of point defects in solids as different as transition metals (V, Nb, ...), A-15 compounds (V_3Si, Nb_3Ge, ...), or perovskite-like copper oxides. Some of these experiments are presented here. (orig.).

155

Modeling of the Ostwald ripening of extrinsic defects and transient enhanced diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {l_brace}1 1 3{r_brace}s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of {l_brace}1 1 3{r_brace} defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low ...

2002-01-01

156

Modeling of the Ostwald ripening of extrinsic defects and transient enhanced diffusion in silicon  

International Nuclear Information System (INIS)

We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, #left brace#1 1 3#right brace#s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of #left brace#1 1 3#right brace# defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ...

2002-01-01

157

Irradiation damage in superconductors  

International Nuclear Information System (INIS)

Most superconductors are quite sensitive to irradiation defects. Critical temperatures may be depressed, critical currents may be increased, by irradiation, but other behaviours may be encountered. In compounds, the sublattice in which defects are created is of significant importance. 24 refs.

1989-05-08

158

Incidence and Determinants of Birth Defects and Enzyme Deficiencies among Live Births in Oman  

UK PubMed Central (United Kingdom)

ObjectivesIn 2003, the Omani Ministry of Health Child Health Care Program initiated a national Birth Defects (BD) Register. This paper reviews the magnitude and risk factors of birth...Full Text Available

2010-04-01

159

Hardening at the design level  

International Nuclear Information System (INIS)

This talk sketches out the main parameters (technology, circuit design) that have an influence on the hardening of digital CMOS integrated circuits. For each technology the more common defects are mentioned. General design rules are proposed to prevent or limit those defects. (D.L.). 2 refs., 2 figs.

160

Genetic aspects of birth defects: new understandings of old problems  

UK PubMed Central (United Kingdom)

Over the past two decades, combined advances in genetics, developmental biology and biochemistry have transformed the study of human birth defects. This review describes the importance of genome architecture,...Full Text Available

2007-07-01

161

Depth dependence of defect evolution and TED during annealing  

Energy Technology Data Exchange (ETDEWEB)

A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si{sup +} implant conditions have been considered. TEM analysis for the highest energy/dose shows that {l_brace}1 1 3{r_brace} defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, {l_brace}1 1 3{r_brace} defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for interstitials. ...

2004-02-01

162

Depth dependence of defect evolution and TED during annealing  

International Nuclear Information System (INIS)

A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si"+ implant conditions have been considered. TEM analysis for the highest energy/dose shows that #left brace#1 1 3#right brace# defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, #left brace#1 1 3#right brace# defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for ...

2004-02-01

163

Defective hepatitis B virus particles are generated by packaging and reverse transcription of spliced viral RNAs in vivo.  

UK PubMed Central (United Kingdom)

Generation of replicative defective viruses is frequently observed during viral infections. We now report that encapsidation and reverse transcription of spliced viral RNA is an additional mechanism...Full Text Available

1991-10-01

164

Characterization of the Molecular Mechanism of Defective Interfering RNA-Mediated Symptom Attenuation in Tombusvirus-Infected Plants  

UK PubMed Central (United Kingdom)

Different tombusviruses were able to support the replication of either homologous or heterologous defective interfering (DI) RNAs, and those infected plants usually developed typical attenuated symptoms....Full Text Available

1998-07-01

165

Silicidation in Pd/Si thin film junction-Defect evolution and silicon surface segregation  

Energy Technology Data Exchange (ETDEWEB)

Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

2007-09-25

166

Liquid crystal defects and confinement in Yang-Mills theory  

CERN Document Server

We show that in the Landau gauge of the SU(2) Yang-Mills theory the residual global symmetry supports existence of the topological vortices which resemble disclination defects in the nematic liquid crystals and the Alice (half-quantum) vortices in the superfluid heluim 3 in the A-phase. The theory also possesses half-integer and integer charged monopoles which are analogous to the point-like defects in the nematic crystal and in the liquid helium. We argue that the deconfinement phase transition in the Yang-Mills theory in the Landau gauge is associated with the proliferation of these vortices and/or monopoles. The disorder caused by these defects is suggested to be responsible for the confinement of quarks in the low-temperature phase.

2005-01-01

167

Detection of EDM defects under Monju support plate using experimental data from remote field eddy current probes and a multi-frequency algorithm  

International Nuclear Information System (INIS)

This paper describes detection of electro-discharged machine (EDM) defects in magnetic steam generator (SG) tubes of Monju fast breeder reactor (FBR). The EDM defects are located under support plate (SP), on the outer tube surface and they are detected by a remote field eddy current probe. Using the experimental measurements and a multi frequency algorithm, the defect signal can be extracted from the SP signal. The parameters of the multi-frequency algorithm were calculated by comparing SP measurements with two-dimensional finite element simulations (FEM). (author)

2006-07-01

170

Anomalous electrical resistivity and defects in A-15 compounds  

International Nuclear Information System (INIS)

Measurements of the temperature dependence of the electrical resistivity and correlations observed with T/sub c/ for V_3Si, V_3Ge, and A-15 Nb-Ge show (i) the existence of a universal defect in the A-15 superconductors which is not nonstoichiometry, (ii) a normal state anomaly also strongly influenced by the defects, and (iii) evidence that T/sub c/ and the electron-phonon interactions for transport processes are approx.100 times more sensitive to defect producing sample modifications in the A-15 compounds than in Nb.

171

X-ray scattering signatures of {beta}-thalassemia  

Energy Technology Data Exchange (ETDEWEB)

X-ray scattering from lyophilized proteins or protein-rich samples is characterized by the presence of two characteristic broad peaks at scattering angles equivalent to momentum transfer values of 0.27 and 0.6 nm{sup -1}, respectively. These peaks arise from the interference of coherently scattered photons. Once the conformation of a protein is changed, these two peaks reflect such change with considerable sensitivity. The present work examines the possibility of characterizing the most common cause of hemolytic anaemia in Egypt and many Mediterranean countries; {beta}-thalassemia, from its X-ray scattering profile. This disease emerges from a genetic defect causing reduced rate in the synthesis of one of the globin chains that make up hemoglobin. As a result, structurally abnormal hemoglobin molecules are formed. In order to detect such molecular disorder, hemoglobin samples of {beta}-thalassemia patients are collected, lyophilized and ...

2009-08-11

172

The effect of temperature on the passive film properties and pitting behaviour of a Fe-Cr-Ni alloy  

Energy Technology Data Exchange (ETDEWEB)

The effect of temperature (60-280{sup o}C) on the properties of the oxide films formed on Alloy 800 in 0.1 M NaCl and 0.1 M Na{sub 2}SO{sub 4} aqueous solutions was studied by in situ AC impedance spectroscopy and polarization in the Fe(CN{sub 6}){sup -3}/Fe(CN){sub 6}{sup -4} redox system. The anodic behavior under the same experimental conditions was examined by potentiodynamic polarization techniques. In both solutions the passive film was found to become more porous, and hence less protective, with increasing temperature. However, at temperatures above 150{sup o}C, the loss of film protectiveness is more pronounced in chloride solutions, in which pitting occurs. Pitting morphology was found to be strongly temperature dependent: isolated and deep pits were found up to 200{sup o}C whereas at higher temperatures a broad, shallow and more generalized type of attack was detected. No effect of temperature on the defect structure of the ...

1996-06-01

173

Surface Topography of 'Hotspot' Regions from a Single Cell SRF Cavity  

Energy Technology Data Exchange (ETDEWEB)

Performance of SRF cavities are limited by non-linear localized effects. The variation of local material characters between "hot" and "cold" spots is thus of intense interest. Such locations were identified in a BCP-etched large-grain single-cell cavity and removed for examination by high resolution electron microscopy (SEM), electron-back scattering diffraction microscopy (EBSD), optical microscopy, and 3D profilometry. Pits with clearly discernable crystal facets were observed in both "hotspot" and "coldspot" specimens. The pits were found in-grain, at bi-crystal boundaries, and on tri-crystal junctions. They are interpreted as etch pits induced by surface crystal defects (e.g. dislocations). All "coldspots" examined had qualitatively low density of etching pits or very shallow tri-crystal boundary junction. EBSD revealed the crystal structure surrounding the pits via crystal phase orientation mapping, while 3D profilometry gave information ...

2009-05-01

174

Superconductivity in irradiated A-15 compounds at low fluences. II. Alpha-particle-irradiated Nb_3Sn and Nb_3Ge  

International Nuclear Information System (INIS)

The T/sub c/ behavior of vapor-deposited Nb_3Ge and Nb_3Sn is examined as a function of low-fluence alpha-particle irradiation. It is found that for Nb_3Sn with rho_0approx.15 #mu##OMEGA#-cm the T/sub c/ is insensitive to low doses of radiation, whereas Nb_3Ge with rho_0approx.50 #mu##OMEGA#-cm has its T/sub c/ depressed immediately with irradiation. It is suggested that the T/sub c/ behavior of A-15 superconductors in the regime of small dose is strongly influenced by the initial state of the sample. Furthermore, it is argued that the behavior of the T/sub c/ with dose can be qualitatively explained by considering a sharp structure in the density of states N(E), the smearing of which by defects leads to a depression in T/sub c/.

175

Study of fractures in cast parts of high-strength aluminum alloy  

Energy Technology Data Exchange (ETDEWEB)

Results are presented from studies on the quality of cast parts made by counterpressure casting of high-strength aluminum alloy AMKh-605, and Al-Cu-Mn-Cr alloys (5.6-6.4% Cu, 0.25-0.55% Mn, 0.20-0.55% Cr, 0.20-0.45% Ti, 0.08-0.25% Zr, less than or equal to0.25% Fe, less than or equal to0.25% Si, less than or equal to0.05% Mg). Chill castings were heat treated by quenching from 450/sup 0/C (20 hours) in water, aging at 160/sup 0/C for five hours with cooling in air. Fractograms of tensile specimens are presented. Scanning electron microscopy allows an ambiguous determination of the cause of failure of a part, be it at initial crystallization crack defects or burns, and also allows a relationship to be established between structure and mechanical properties.

1985-03-01

176

Stochastic Finsler D-particle Space-Time Foam Enhances Dark Matter Relics  

CERN Document Server

Within the context of space-time (D-particle) foam in string/brane-theory it is demonstrated that it is possible to generate non-extensive statistics. The D-particle foam model involves point-like brane defects (D-particles), which provide the topologically non-trivial foamy structures of space-time. The D-particles can capture and emit stringy matter and this leads to a recoil of D-particles. It is indicated how one effect of such a recoil of D-particles is a back reaction on the space-time metric of Finsler type which is stochastic. We show that such a type of stochastic space-time foam can lead to cosmological effects similar to those induced by modifications of particle distributions within the framework of Tsallis entropies. The restrictions placed on the free parameters of the Finsler type metric are obtained from solving the Boltzmann equation in this background for relic abundances of a Lightest Supersymmetric Particle (LSP) dark matter ...

2010-01-01

177

Nanostructuring the graphite basal plane by focused ion beam patterning and oxygen etching  

International Nuclear Information System (INIS)

Ga"+ focused ion beam (FIB) patterning was used to structure highly oriented pyrolytic graphite surfaces with square, periodic arrays of amorphous carbon defects (mesh sizes: 300 nm-2 #mu#m). Controlled oxygen etching of these arrays leads to matrices of uniform, orientationally aligned, nm-sized, hexagonal holes. The properties of the resulting hole assembly (hole depths and lateral hole dimensions) have been investigated by means of atomic force microscopy, scanning electron microscopy and FIB sectioning. The hole dimensions and uniformity both depend on the FIB parameters and etching conditions. Etching temperatures from 500 to 700 deg. C were applied. Initial etch rates of up to 10"6 C s"-"1 per individual hole were observed when using oxygen pressures of 200 mbar. For an etch temperature of 590 deg. C the rate of etching of individual holes was found to depend measurably on the inter-hole separation. This confirms that the associated ...

2006-12-14

178

Mechanisms controlling the composition influence on radiation hardening and embrittlement of iron-base alloys  

International Nuclear Information System (INIS)

Classification and ranking of the solid solution on their reaction to the irradiation is suggested on the basis of binary system structure controlled by mixing enthalpy sign, melting temperatures relation of components and solidus curves slope. Several combinations of these characteristics permit to pick out three groups of substitutional elements capable of forming the vacancy-solute atom complexes either low-mobile or fast-mobile ones as compared to monovacancies migration. The radiation hardening (and embrittlement) of binary alloys should be intensified respectively either due to heterogeneous point defect clusters nucleation on solute traps or due to solute atom clusters/ precipitate formation. A local cohesion decrease may also occur especially if low-melting elements (characterized by low surface energy) are segregating on internal sinks or grain boundaries. The predicted specifics of different alloy group under irradiation and during ...

1994-06-20

179

Manipulation of inverted and direct opals by a focused ion beam scanning electron microscope (FIB SEM)  

International Nuclear Information System (INIS)

Focused ion beam (FIB) milling techniques are presented aiming at the manipulation of both tin dioxide (SnO_2) inverted opals and polystyrene (PS) direct opals. Different SnO_2 opals are considered in order to estimate the regularity of their bulk after the production. A SnO_2 mesoporous monolith is FIB micromachined to make it suitable for optical applications. PS direct opals are structured by FIB milling at different scales. Ordered arrays of PS opals are modified by selectively removing a single sphere. In performing this task, we discuss the effects on the FIB milling due to the gas-assisted enhanced etching and to the binding of the nearest neighbours. Techniques to achieve imaging of PS opals in absence of a conductive coating are also brought up. Furthermore, isolated PS spheres are drilled with or without enhanced etching in order to produce controlled defects on them. The FIB-assisted manipulations we show may find potential ...

2008-08-01

180

Lipid A biosynthesis in Rhizobium leguminosarum: Role of a 2-keto-3-deoxyoctulosonate-activated 4{prime} phosphatase  

Energy Technology Data Exchange (ETDEWEB)

Lipid A from several strains of the N{sub 2}-fixing bacterium Rhizobium leguminosarum displays significant structural differences from Escherichia coli lipid A, one of which is the complete absence of phosphate groups. However, the first seven enzymes of E. coli lipid A biosynthesis, leading from UDP-GlcNAc to the phosphorylated intermediate, 2-keto-3-deoxyoctulosonate (Kdo{sub 2})-lipid IV{sub A}, are present in R. leguminosarum. We now describe a membrane-bound phosphatase in R. leguminosarum extracts that removes the 4{prime} phosphate of Kdo{sub 2}-lipid IV{sub A}. The 4{prime} phosphatase is selective for substrates containing the Kdo domain. It is present in extracts of R. leguminosarum biovars phaseoli, viciae, and trifolii but is not detectable in E. coli and Rhizobium meliloti. A nodulation-defective strain (24AR) of R. leguminosarum bovar trifolii, known to contain a 4{prime} phosphate residue on its lipid A, also lacks measurable ...

1995-08-01

181

Identification of the binding domain for NADP"+ of human glucose-6-phosphate dehydrogenase by sequence analysis of mutants  

International Nuclear Information System (INIS)

Human erythrocyte glucose-6-phosphate is normally quite stable in the presence of 10 #mu#M NADP"+. Certain glucose-6-phosphate dehydrogenase variants lose virtually all their activity at this concentration of NADP"+ but are reactivated by 200 #mu#M NADP"+. Such variants presumably have a defect in their NADP"+-binding site. The authors analyzed the sequence of cDNA or genomic DNA from seven unrelated patients with hemolytic anemia due to the inheritance of variants that are reactivated by NADP"+. Six patients had substitutions of one of three adjacent amino acids, and the seventh patient had another amino acid substitution 23 residues downstream. These amino acids are highly conserved, all being present in rat and all but one being found also in Drosophila. The anomalous electrophoretic behavior of some of the variants can be explained by their loss of ability to bind NADP"+. The conclude that the region in which these mutations occur defines the binding domain for ...

182

Evolution of defect structures during cold rolling of ultrafine-grained Cu and Cu-Zn alloys: Influence of stacking fault energy  

Energy Technology Data Exchange (ETDEWEB)

Samples of pure Cu, bronze (Cu-10 wt.% Zn) and brass (Cu-30 wt.% Zn) with stacking fault energies (SFE) of 78, 35, and 14 mJ/m{sup 2}, respectively, were processed by high-pressure torsion (HPT) and by a combination of HPT followed by cold-rolling (CR). X-ray diffraction measurements indicate that a decrease in SFE leads both to a decrease in crystallite size and to increases in microstrain, dislocation and twin densities for the HPT and HPT + CR processed ultrafine-grained (UFG) samples. Compared with processing by HPT, subsequent processing by CR refines the crystallite size of all samples, increases the twin densities of UFG bronze and brass, and increases the dislocation density in UFG bronze. It also decreases the dislocation density in UFG brass and leads to an unchanged dislocation density in UFG copper. The results suggest there may be an optimum stacking fault energy for dislocation accumulation in UFG Cu-Zn alloys and this has important implications in the production of ...

2008-02-15

183

Electrical biasing and voltage contrast imaging in a focused ion beam system  

Energy Technology Data Exchange (ETDEWEB)

We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and provide examples of ...

1995-09-01

184

Effects of multi-ion irradiation on microstructural changes in lithium titanate  

Energy Technology Data Exchange (ETDEWEB)

The irradiation behavior of Li{sub 2}TiO{sub 3} under a fusion reactor environment was simulated by simultaneous irradiation of Li{sub 2}TiO{sub 3} by the triple ion beams and the respective single ion beams of O{sup 2+}, He{sup +} and H{sup +}. The microstructural changes in Li{sub 2}TiO{sub 3} caused by the irradiation were measured by FT-IR photoacoustic spectroscopy. The results suggest that the amount of TiO{sub 2} formed is proportional to the dpa and that the method of irradiation does not affect the dependence of formation of TiO{sub 2}. On the other hand, the amount of defects and/or radiolytic products generated by irradiation, which is considered to trap hydrogen near the surface, is found to be affected by the method of irradiation. Such phenomena are believed to affect the tritium release behavior from Li{sub 2}TiO{sub 3}, and durability of Li{sub 2}TiO{sub 3} and compatibility of Li{sub 2}TiO{sub 3} with other components of the breeder blanket such as ...

2009-04-30

185

Effects of multi-ion irradiation on microstructural changes in lithium titanate  

International Nuclear Information System (INIS)

The irradiation behavior of Li_2TiO_3 under a fusion reactor environment was simulated by simultaneous irradiation of Li_2TiO_3 by the triple ion beams and the respective single ion beams of O"2"+, He"+ and H"+. The microstructural changes in Li_2TiO_3 caused by the irradiation were measured by FT-IR photoacoustic spectroscopy. The results suggest that the amount of TiO_2 formed is proportional to the dpa and that the method of irradiation does not affect the dependence of formation of TiO_2. On the other hand, the amount of defects and/or radiolytic products generated by irradiation, which is considered to trap hydrogen near the surface, is found to be affected by the method of irradiation. Such phenomena are believed to affect the tritium release behavior from Li_2TiO_3, and durability of Li_2TiO_3 and compatibility of Li_2TiO_3 with other components of the breeder blanket such as structural materials in the fusion reactor system under ...

2009-04-30

186

Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO_2 matrix  

International Nuclear Information System (INIS)

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO_2 films was studied. A 'blue'-shift of PL spectrum from the SiO_2 films implanted with Si"+ ions to total dose of 1.2x10"1"7 cm"-"2 with increase in hydrostatic pressure was observed. For the films implanted with Si"+ions to a total dose of 4.8x10"1"6 cm"-"2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

2001-09-23

187

Ectopic expression of wild-type or a dominant-negative mutant of transcription factor NTF-1 disrupts normal Drosophila development.  

Science.gov (United States)

The Drosophila melanogaster tissue-specific transcription factor NTF-1 was originally identified in vitro as a protein that could bind to and activate transcription from the Dopa decarboxylase (Ddc) gene. A structure-function analysis of NTF-1 led to the identification of a discrete amino-terminal activation domain. Here, we report that an NTF-1 mutant lacking the activation domain acts as a trans-dominant inhibitor of NTF-1 activation in tissue culture cells by forming inactive heterodimers with the full-length protein. Ectopically expressing this dominant-negative protein or the full-length protein in developing Drosophila embryos leads to dire developmental consequences. Overexpressing the trans-dominant NTF-1 leads to lethality, while overexpressing full-length NTF-1 results in both lethality and morphogenetic defects. Our results suggest that both the activity and the regulation of NTF-1 are critical for viability and proper development of ...

1993-11-15

188

Anti-corrosive properties of an electropolymerized polymer coating on a shape memory alloy surface  

Energy Technology Data Exchange (ETDEWEB)

Acrylonitrile electropolymerization (in an aprotic and anhydrous medium) has been used as a way to build thin, homogeneous and covering polyacrylonitrile layers grafted on the surface of usual metals and specially on copper-based shape memory alloy: Cu-Zn-Al. The results of the study first confirm the possibility of grafting thin and covering polyacrylonitrile layers on Cu-Zn-Al surface. The morphology of the films however is influenced by the geometry of the polycristalline structure of the alloy and its superficial defects. Samples obtained after grafting polyacrylonitrile films were submitted to corrosion tests based on Electrochemical Impedance Spectroscopy (EIS) measurements in a NaCl/H{sub 2}O medium. Results show that some post-treatments of the grafted films are necessary to improve their protective role, while preserving the strong interfacial bondings. Actually, thermal and mechanical cycling of the shape memory alloy covered by ...

1996-01-01

189

Transmit-receive eddy current probes for heat exchanger inspection  

International Nuclear Information System (INIS)

This paper describes various eddy current probes, and their performance, which were developed at the Chalk River Laboratories of Atomic Energy of Canada. Included are probes for detecting defects at tubesheet regions in heat exchanger tubes, defects at expansion-transition regions in finned tubes, and defects in ferromagnetic tubes. All of these probes can be used with conventional commercially available instruments. (author).

1987-09-01

190

Transesophageal echo to help percutaneous closure of ventricular septal defect post acute myocardial infarction  

British Library Electronic Table of Contents (United Kingdom)

Ventricular septal defect after acute myocardial infarction (AMI) is a complication associated with poor outcome in the absence of intervention. We report a case of successful TEE guided transcatheter closure of a post myocardial infarction (MI) ventricular septal defect (VSD) with an Amplatzer occluder in a 79 years old male with cardiogenic shock.

2011-01-01

191

Superconducting transition temperature of the nonideal A-15 crystals  

International Nuclear Information System (INIS)

The defect-induced effect on superconducting transition temperature T_c of A-15 compounds is examined. T_c is found from the Eliashberg equations which take into account the defect-induced changes in the electron-phonon spectral function and electron density of states. The dependence of T_c on the defect type in the superconductor is obtained.

192

Nonlinear air-coupled emission: The signature to reveal and image microdamage in solid materials  

International Nuclear Information System (INIS)

It is shown that low-frequency elastic vibrations of near-surface planar defects cause high-frequency ultrasonic radiation in surrounding air. The frequency conversion mechanism is concerned with contact nonlinearity of the defect vibrations and provides efficient generation of air-coupled higher-order ultraharmonics, ultrasubharmonics, and combination frequencies. The nonlinear air-coupled ultrasonic emission is applied for location and high-resolution imaging of damage-induced defects in a variety of solid materials.

2007-12-17

193

Kinetics of achieving equilibrity at the sorption of radionuclides  

International Nuclear Information System (INIS)

Radionuclide (R) sorption from a solution (vapor) by freshly formed crystals with production of substitution solid solutions under different types of self-disordering is studied. Changes of self-defectiveness and macrodefectiveness with time and effect of radiation defects in the presence of P macroquantities are taken into account. An analysis for monodispersed sorbents is performed. It is shown that the achievement of equilibrium within a reasonable time in impurity-solid phase system depends on defectiveness which ensures a required level of the coefficient of impurity diffusion in sorbent crystals.

194

Dielectric barrier discharge using corona-modified silicone rubber  

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

2008-10-01

195

Defect influence on the T/sub c/ of A-15 compounds  

Science.gov (United States)

The defect-induced electron lifetime and energy-gap anisotropy effects on the T/sub c/ of the A-15 compounds are examined. A self-consistent model calculation demonstrates that the various defect dependences of T/sub c/ can be qualitatively understood in terms of the electron-lifetime effect.

1979-10-01

196

Defect influence on the T/sub c/ of A-15 compounds  

International Nuclear Information System (INIS)

The defect-induced electron lifetime and energy-gap anisotropy effects on the T/sub c/ of the A-15 compounds are examined. A self-consistent model calculation demonstrates that the various defect dependences of T/sub c/ can be qualitatively understood in terms of the electron-lifetime effect.

197

Assessing the Risks of Sampling Rates for Surveilling a Population  

British Library Electronic Table of Contents (United Kingdom)

Surveillance of a population, such as a weapon stockpile, is needed to discover manufacturing defects as well as deterioration as the population ages. This article considers the risks of sampling rates for surveillance from three perspectives: detection probability of defects in a proportion of a population with pass/fail data, detection of a trend in a defective proportion of the population with pass/fail data, and detection of a trend with quantitative degradation measurements. Understanding of these risks will help the decision maker choose a sampling rate to protect against such problems of a specified size at a tolerable risk.

2011-01-01

198

Point defects in dilute nitride III-N-As and III-N-P  

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

2006-04-01

199

Modification of intergrain connectivity, upper critical field anisotropy and critical current density in ion irradiated MgB{sub 2} films  

Energy Technology Data Exchange (ETDEWEB)

We compare the effect of isotropic point defects vis a vis extended defects on the inter and intra grain properties of superconducting MgB{sub 2} thin films. In a recent paper Gandikota et al. [Appl. Phys. Lett. 86 (2005) 012508] reported that after 200 MeV {alpha} particle irradiation intergrain connectivity remains unaffected. Our results on the contrary indicate that connectivity does depend on irradiation dose and type of ions used. We ascertain that extended defects alter the {sigma} band properties of this two-band superconductor more effectively than the point defects. The improvement in upper critical field and critical current density is intricately related to the type and density of defects created.

2006-08-01

200

#left brace#311#right brace# Defects in ion-implanted silicon: The cause of transient diffusion, and a mechanism for dislocation formation  

International Nuclear Information System (INIS)

Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of ...

1995-03-20

201

Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon  

Energy Technology Data Exchange (ETDEWEB)

In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR ...

2002-01-01

202

Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon  

International Nuclear Information System (INIS)

In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a ...

2002-01-01

203

Impurity and clustering effects on defect evolution in ion-implanted Si  

Energy Technology Data Exchange (ETDEWEB)

A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an ...

1998-10-01

204

Effect of electron irradiation on domain wall pinning defects in 50-50 NiFe  

International Nuclear Information System (INIS)

A magnetic measuring technique, which sorts out defects according to a distribution function n, was used to study the influence of electron irradiation on 50-50 NiFe. The distribution function is determined in terms of the maximum force f/subm/ that a defect can exert on a forward moving domain wall, or equivalently, the range z_0, which is the distance the mean position of the wall may move past the defect before the wall snaps free from the pinning action of the defect. The range and maximum force are related by a spring constant k, viz., f/subm/=kz_0. The quantity n (z_0) dz_0 gives the number of defects per unit volume having a range between z_0 and z_0+dz_0. Distribution functions were determined before and after electron irradiation. The irradiation was for 100 min with 18-MeV electrons with a dose of 1.1times10"1"7 e/cm"2. Following irradiation, there was a substantial ...

205

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding  

International Nuclear Information System (INIS)

In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate ...

2008-12-05

206

Set of equations for stress-mediated evolution of the nonequilibrium dopant-defect system in semiconductor crystals  

Energy Technology Data Exchange (ETDEWEB)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration ...

2004-11-17

207

Set of equations for stress-mediated evolution of the nonequilibrium dopant-defect system in semiconductor crystals  

International Nuclear Information System (INIS)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second ...

2004-11-17

208

Effect of energy and dose on transient-enhanced diffusion and defect microstructure in low energy high dose As{sup +} implanted Si  

Energy Technology Data Exchange (ETDEWEB)

(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including ...

1997-11-01

209

Effect of energy and dose on transient-enhanced diffusion and defect microstructure in low energy high dose As"+ implanted Si  

International Nuclear Information System (INIS)

(001) CZ silicon wafers were implanted with arsenic (As"+) at energies of 10--50 keV to doses of 2 x 10"1"4 to 5 x 10"1"5/cm"2. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point ...

1996-12-02

210

Diffusion modeling of ion implanted boron in Si during RTA: Correlation of extended defect formation and annealing with the enhanced diffusion of boron. [Rapid Thermal Annealing  

Energy Technology Data Exchange (ETDEWEB)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...

1993-01-01

211

Self-interstitial supersaturation during Ostwald ripening of end-of-range defects in ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

1996-12-01

212

Results of UT training for defect detection and sizing technique using specimens with fatigue crack and SCC  

International Nuclear Information System (INIS)

At the importance increase of UT (ultrasonic testing) with the application of rules on fitness-for-service for nuclear power plants, JAPEIC (Japan power engineering and inspection corporation) started education training for defect detection and sizing technique. Weld joints specimen with EDM (Electro-Discharged Machining) notches, fatigue cracks and intergranular stress corrosion cracks were tested and practiced repeatedly based on a modified ultrasonic method and the defect size measuring accuracy of the trainees was surely improved. Results of the blind test confirmed effectiveness of education training. (T. Tanaka)

2005-04-01

213

Photon deficient bone metastasis of hepatocellular carcinoma with avid gallium-67 uptake  

Energy Technology Data Exchange (ETDEWEB)

While bone metastases producing photon deficient defects on bone scintigraphy have previously been reported, this finding has not been emphasized for hepatocellular carcinoma (HCC). Furthermore, ''filling-in'' of such photon deficient defects with 67Ga at skeletal sites of metastatic HCC has not been described. In this case report, the combination of a photon deficient defect on bone scintigraphy and avid accumulation of 67Ga in this same area was of value in confirming the diagnosis of metastatic HCC.

1985-12-01

214

Photochemical generation of E' centre from Si-H in amorphous SiO2 under pulsed ultraviolet laser radiation  

CERN Document Server

In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.

2006-01-01

215

Modified spontaneous emission rate in three-dimensional layer-by-layer photonic crystals with planar defects  

Science.gov (United States)

A finite three-dimensional layer-by-layer photonic crystal with planar defects in a layer is shown to drastically modify the spontaneous emission rate of an embedded dipole. Finite-difference time-domain calculations with one quarter symmetric boundary condition and perfectly matched layer demonstrate the strong enhancement effects induced by the cavity resonance of defect modes and band-edge resonant modes. Simulation shows that the emission spectra are quite different when the position or polarization of the dipole is changed. Moreover, the extraction efficiency is calculated to observe the percentage of light leakage through a substrate.

2010-01-01

216

Modeling of extended defects in silicon  

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

1997-11-01

217

Evidence for excess vacancy defects in the Pd-Si system: positron annihilation, x-ray diffraction and Auger electron spectroscopy study  

Energy Technology Data Exchange (ETDEWEB)

The transformation of Pd/Si to Pd{sub 2}Si/Si is investigated using depth-resolved positron annihilation, x-ray diffraction and Auger electron spectroscopy studies. The observed defect-sensitive positron S-parameter value of 1.022-1.054 indicates the existence of divacancies across the silicide/silicon interface and Si substrate region. Our experimental observation of vacancy defects is consistent with the model proposed for excess vacancy generation across the interface consequent to Si diffusion. (letter to the editor)

2003-11-26

218

BURST STRENGTH AND NON-DESTRUCTIVE EVALUTION OF COMPOSITE PIPES AND PIPE COUPLINGS WITH DEFECTS (TOP 48)  

Environmental Research Database

ObjectivesObjectives Not AvailableDescriptionTo determine the effects of water penetration on the burst strength of filament wound composite pipes which have been damaged by impact and then subjected to long term pressurisation with sea water. ~%~ To monitor and characterise the damage and effects of sea water penetration using ultrasonic NDT. To determine the burst strength of bonded composite pipe joints with and without defects and to see whether the defects can be detected using ultrasonic NDT. [continued...

1996-01-31

219

Study of point defect detectors in Si  

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

1999-05-01

220

SENSITIVITY STUDIES FOR AN IN-SITU PARTIAL DEFECT DETECTOR (PDET) IN SPENT FUEL USING MONTE CARLO TECHNIQUES  

Energy Technology Data Exchange (ETDEWEB)

This study presents results from Monte Carlo radiation transport calculations aimed at characterizing a novel methodology being developed to detect partial defects in Pressurized Water Reactor (PWR) spent fuel assemblies (SFAs). The methodology uses a combination of measured neutron and gamma fields inside a spent fuel assembly in an in-situ condition where no movement of the fuel assembly is required. Previous studies performed on single isolated assemblies resulted in a unique base signature that would change when some of the fuel in the assembly is replaced with dummy fuel. These studies indicate that this signature is still valid in the in-situ condition enhancing the prospect of building a practical tool, Partial Defect Detector (PDET), which can be used in the field for partial defect detection.

2008-04-28

221

Repair of a Complex Congenital Cardiac Defect  

Medline Plus

... stenosis. It looks from the transesophageal and the 3-D echo that most of the problem is really ... posterior leaflet, which you can see on the 3-D echo image is a major source. The anterior ...

222

Radiation hardening in neutron-irradiated polycrystalline copper: Barrier strength of defect clusters  

International Nuclear Information System (INIS)

Defect cluster formation in 14-MeV neutron irradiated polycrystalline copper has been observed by transmission electron microscopy (TEM) and correlated with the increase in yield stress. The measurements indicate that the radiation hardening component of the yield strength in polycrystals is not directly additive to the unirradiated yield strength. A transitional behavior was observed for radiation hardening at low fluences, which produces an anomalous variation of the defect cluster barrier strength with fluence. The behavior is attributed to the effect of grain boundaries on slip band transmission. An upper limit for the room temperature barrier strength of defect clusters in neutron-irradiated copper was determined to be #alpha#=0.23. (orig.).

1989-12-04

223

Mechanical jacks meant to support the movable shielding wall (Proton Room side) of the SC  

CERN Document Server

This mechanical version was soon after changed into a hydraulic jack one (the reason being a number of serious constructional defects).

1955-01-01

224

Learning material defect patterns by separating mixtures of independent component analyzers from NDT sonic signals  

British Library Electronic Table of Contents (United Kingdom)

This paper introduces the application of independent component analysis mixture modelling (ICAMM) in non-destructive testing (NDT). The application consists of discriminating patterns for material quality control from homogeneous and defective materials inspected by impact-echo testing. This problem is modelled as a mixture of independent component analysis (ICA) models, representing a class of defective or homogeneous material by an ICA model whose parameters are learned from the impact-echo signal spectrum. These parameters define a kind of particular signature for the different defects. The proposed procedure is intended to exploit to the maximum the information obtained with the cost efficiency of only a single impact. To illustrate this capability, four levels of classification detail...

2010-01-01

225

Laboratory evaluation of pipeline girth weld imperfections to determine their acceptability in sour gas service  

Energy Technology Data Exchange (ETDEWEB)

The influence of common welding defects such as internal under-cut, incomplete penetration of the root bead, internal concavity and hollow bead have been evaluated in a sour environment. Tests were performed on samples cut from actual pipeline welds. The individual defects were subjected to slow strain rate testing. The samples were then examined by metallography, scanning electron microscopy, and hardness testing. It was established that a threshold stress intensity exists for sulphide stress cracking. The test results were compared to those obtained from samples of the weld and pipe which did not contain any defects. This comparison indicated that the metallurgical variations associated with the presence of a weld are the main factor for sulphide stress cracking rather than any specific defects or geometry. 5 tabs., 9 figs.

1992-12-31

226

Influence of KDEL on the Fate of Trimeric or Assembly-Defective Phaseolin  

UK PubMed Central (United Kingdom)

The tetrapeptide KDEL is commonly found at the C terminus of soluble proteins of the endoplasmic reticulum (ER), and it contributes to their localization by interacting with a receptor that recycles...Full Text Available

2001-05-01

227

Failure location analysis for tagged reactor assemblies  

Science.gov (United States)

The location of defective LMFBR fuel pins by the determination of gas tag isotopic ratios is discussed. The application of this method to the FFTF Reactor briefly described.

1979-03-01

228

Defective gut function in drop-dead mutant Drosophila  

UK PubMed Central (United Kingdom)

Mutation of the gene drop-dead (drd) causes adult Drosophila to die within 2 weeks of eclosion and is associated with reduced rates of defecation...Full Text Available

2009-09-01

229

Defective Glycinergic Synaptic Transmission in Zebrafish Motility Mutants  

UK PubMed Central (United Kingdom)

Glycine is a major inhibitory neurotransmitter in the spinal cord and brainstem. Recently, in vivo analysis of glycinergic synaptic transmission has been pursued in zebrafish using...Full Text Available

230

Defect creation by electronic processes in MgO bombarded with GeV heavy ions  

Energy Technology Data Exchange (ETDEWEB)

To study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.

1996-12-31

231

Current Projects - Human Nutrition Research Center on Aging ...  

Science.gov (United States)

diet and genetic obesity metabolic defects and inflammation. To determine the role of adipocyte death in promoting adipose tissue inflammation and insulin resistance in animal...

2011-08-31

232

Computer Vision Hardware System for Automating Rough Mills of Furniture Plants  

Science.gov (United States)

... company. To automate this initial cutup requires a computer vision system that can locate and identify surface defects ... ...

233

Automated NDT for large diameter tubular products  

International Nuclear Information System (INIS)

Ultrasonic and eddy-current techniques are used to automatically examine large diameter tubular products during their production for defective areas and out-of-tolerance conditions.

1976-09-06

234

Antiferromagnetic ordering of defects in GaAs  

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

1992-10-15

235

The Orbit of the Eclipsing X-ray Pulsar EXO 1722-363  

CERN Document Server

With recent and archival Rossi X-Ray Timing Explorer (RXTE) X-ray measurements of the heavily obscured X-ray pulsar EXO 1722-363 (IGR J17252-3616), we carried out a pulse timing analysis to determine the orbital solution for the first time. The binary system is characterized by a_x sin(i) = 101 +/- 3 lt-s and P_orb = 9.7403 +/- 0.0004 days (90% confidence), with the precision of the orbital period being obtained by connecting datasets separated by more than 7 years (272 orbital cycles). The orbit is consistent with circular, and e 61 degrees at the 99% confidence level, the radius of the primary is between 21 R_sun and 37 R_sun, and its mass is less than about 22 M_sun. The acceptable range of radius and mass shows that the primary is probably a supergiant of spectral type B0I-B5I. Photometric measurements of its likely counterpart are consistent with the spectral type and luminosity if the distance to the system is between 5.3 kpc and 8.7 kpc. Spectral analysis ...

2006-01-01

236

Technical support document: Energy efficiency standards for consumer products: Room air conditioners, water heaters, direct heating equipment, mobile home furnaces, kitchen ranges and ovens, pool heaters, fluorescent lamp ballasts and television sets. Volume 3, Water heaters, pool heaters, direct heating equipment, and mobile home furnaces  

Energy Technology Data Exchange (ETDEWEB)

This is Volume 3 in a series of documents on energy efficiency of consumer products. This volume discusses energy efficiency of water heaters. Water heaters are defined by NAECA as products that utilize oil, gas, or electricity to heat potable water for use outside the heater upon demand. These are major appliances, which use a large portion (18% on average) of total energy consumed per household (1). They differ from most other appliances in that they are usually installed in obscure locations as part of the plumbing and are ignored until they fail. Residential water heaters are capable of heating water up to 180{degrees}F, although the setpoints are usually set lower.

1993-11-01

237

Resolving conflicting safety cultures  

International Nuclear Information System (INIS)

Several nuclear power plant sites have been wounded in the crossfire between two distinct corporate cultures. The traditional utility culture lies on one side and that of the nuclear navy on the other. The two corporate cultures lead to different perceptions of open-quotes safety culture.close quotes This clash of safety cultures obscures a very important point about nuclear plant operations: Safety depends on organizational learning. Organizational learning provides the foundation for a perception of safety culture that transcends the conflict between utility and nuclear navy cultures. Corporate culture may be defined as the knowledge, attitudes, and beliefs shared by employees of a given company. Safety culture is the part of corporate culture concerning shared attitudes and beliefs affecting individual or public safety. If the safety culture promotes behaviors that lead to greater safety, employees will tend to open-quotes do the right thingclose quotes even ...

1993-06-20

238

Investigating the complex X-ray spectrum of a broad-line 2MASS red quasar: XMM-Newton observation of FTM 0830+3759  

CERN Document Server

We report results from a 50 ks XMM-Newton observation of the dust-reddened broad-line quasar FTM 0830+3759 (z=0.413) selected from the FIRST/2MASS Red Quasar survey. For this AGN, a very short 9 ks Chandra exposure had suggested a feature-rich X-ray spectrum and HST images revealed a very disturbed host galaxy morphology. Contrary to classical, optically-selected quasars, the X-ray properties of red (i.e. with J-Ks> 1.7 and R-Ks> 4) broad line quasars are still quite unexplored, although there is a growing consensus that, due to moderate obscuration, these objects can offer a unique view of spectral components typically swamped by the AGN light in normal, blue quasars. The XMM-Newton observation discussed here has definitely confirmed the complexity of the X-ray spectrum revealing the presence of a cold (or mildly-ionized) absorber with Nh ~10^{22} cm^-2 along the line of sight to the nucleus and a Compton reflection component accompanied by an intense Fe K ...

2010-01-01

239

Effect of helium implantation on the mechanical properties and the microstructure of the martensitic 12% Cr-steel 1. 4914  

Energy Technology Data Exchange (ETDEWEB)

Tensile specimens of the normalized and tempered fully martensitic steel DIN 1.4914 were helium implanted up to 340 appm within the temperature range 300-720/sup 0/C using a 104 MeV alpha particle beam. The high He/damage ratio of 1850 appm He/dpa allowed to determine the effect of helium on material properties. After irradiation tensile strength and ductility were investigated mainly at test temperatures equal to the irradiation temperatures. While short time irradiations with helium contents up to 100 appm have shown no visible effect on the tensile behaviour at all temperatures investigated, long time irradiations reduced the material strength at irradiation temperatures above about 440/sup 0/C. This irradiation induced softening obscured the predicted minor hardening effect of the observed He-bubbles completely and increases with irradiation time and temperature. The fracture mode of helium-implanted and control specimens is found to remain always ductile and ...

1988-07-01

240

Discovery of a strong Baldwin effect in mid-infrared AGN lines  

CERN Document Server

We present the discovery of a Baldwin effect in 8 nearby Seyfert galaxies for the three most prominent mid-infrared forbidden emission lines observable from the ground that are commonly found in AGN, [ArIII](8.99 micron), [SIV](10.51 micron), and [NeII](12.81 micron). The observations were carried out using the VLT/VISIR imager and spectroraph at the ESO/Paranal observatory. The bulk of the observed line emission comes from the inner <0.4 arcsec which corresponds to spatial scales <100 pc in our object sample. The correlation index is approximately -0.6 without significant difference among the lines. This is the strongest anti-correlation between line equivalent width and continuum luminosity found so far. In the case of Circinus, we show that despite the use of mid-infrared lines, obscuration by either the host galaxy or the circumnuclear dust torus might affect the equivalent widths. Given the small observed spatial scales from which most of the line ...

2008-01-01

241

Combustion of chemical substances. Fire characteristics and smoke gas components in large-scale experiments  

Energy Technology Data Exchange (ETDEWEB)

This report describes the combustion experiments performed using the SP Industry Calorimeter. In addition to measuring parameters such as heat release rate (HRR), mass loss rate, effective heat of combustion and smoke obscuration, considerable effort was put into the characterisation of the smoke gases in order to obtain a basis for evaluations of the toxic potency of the smoke. The materials studied were Nylon 66, polypropene, polystyrene (with and without fire retardant, respectively), PVC and chlorobenzene. A total of 19 large-scale, well ventilated combustions were carried out. The mass of sample burned ranged from 20 kg to 125 kg in an experiment. A procedure was designed for cleaning the smoke gas duct between experiments and was found to be effective. Measurements were carried out for the amounts of O{sub 2}, CO{sub 2}, CO, NO{sub x}, THC (unburned hydrocarbons), HCN, HCl, NH{sub 3} and individual organic compounds in the smoke. Adsorbents were used for the ...

1995-12-31

242

Atelectasis on pediatric chest CT: comparison of sedation techniques  

International Nuclear Information System (INIS)

Background. A change in practice at our institution resulted in increased use of anesthesia for CT scan of the chest in children who required sedation. Objective. To determine whether there is a difference in the frequency or severity of pulmonary atelectasis on CT scan in children sedated by anesthesiologists compared with children sedated by radiologists using intravenous pentobarbital. Materials and methods. Retrospective blinded review of 60 CT scans of the chest performed in 41 children. Forty-one studies in children sedated by radiologists (median age 29 months) were compared with 19 studies in children sedated by anesthesiologists (median age 25 months). Results. Atelectasis sufficient to obscure pulmonary metastases was shown in 5 of 41 (12 %) radiology sedations and 13 of 19 (68 %) anesthesiology sedations (P < 0.01). Higher grades of atelectasis were recorded in children under anesthesia (P < 0.01). Conclusion. Atelectasis is more frequent and more ...

1999-07-01

243

Accretion onto Supermassive Black Holes in Quasars: Learning from Optical/UV Observations  

CERN Document Server

Accretion processes in quasars and active galactic nuclei are still poorly understood, especially as far as the connection between observed spectral properties and physical parameters is concerned. Quasars show an additional degree of complexity compared to stars that is related to anisotropic emission/obscuration influencing the observed properties in most spectral ranges. This complicating factor has hampered efforts to define the equivalent of an Hertzsprung-Russel diagram for quasars. Even if it has recently become possible to estimate black hole mass and Eddington ratio for sources using optical and UV broad emission lines, the results are still plagued by large uncertainties. Nevertheless, robust trends are emerging from multivariate analysis of large spectral datasets of quasars. A firm observational basis is being laid out by accurate measurements of broad emission line properties especially when the source rest-frame is known. We consider the most widely ...

2006-01-01

244

Investigating of composition, structure and properties of Si modification under variable dose ions implantation influence  

International Nuclear Information System (INIS)

Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation and further annealing on composition, electronic and crystalline ...

245

Variations in Mre11/Rad50/Nbs1 status and DNA damage-induced S-phase arrest in the cell lines of the NCI60 panel  

UK PubMed Central (United Kingdom)

BackgroundThe Mre11/Rad50/Nbs1 (MRN) complex is a regulator of cell cycle checkpoints and DNA repair. Defects in MRN can lead to defective S-phase arrest when cells are damaged....Full Text Available

246

Preliminary Assessment of the Safety and Immunogenicity of a New CTX?-Negative, Hemagglutinin/Protease-Defective El Tor Strain as a Cholera Vaccine Candidate  

UK PubMed Central (United Kingdom)

Vibrio cholerae 638 (El Tor, Ogawa), a new CTXΦ-negative hemagglutinin/protease-defective strain that is a cholera vaccine candidate, was examined for safety and immunogenicity...Full Text Available

1999-02-01

247

Optic probe for semiconductor characterization  

Energy Technology Data Exchange (ETDEWEB)

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

2008-09-02

248

Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion  

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare ...

1999-01-01

249

Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion  

International Nuclear Information System (INIS)

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are ...

1999-01-01

250

Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon  

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

251

Investigation of radiation defects in solids using the EXAFS method  

International Nuclear Information System (INIS)

The exafs method is proposed as a more informative, universal one to investigate the radiation defects in solids. The successful results as obtained by the author using the synchrotron radiation source are reported for the first time. The measurements were carried out in GaAsP crystals irradiated with 50 MeV electrons.

1978-02-15

252

Assembly of 60S ribosomal subunits is perturbed in temperature-sensitive yeast mutants defective in ribosomal protein L16.  

UK PubMed Central (United Kingdom)

Temperature-sensitive mutants defective in 60S ribosomal subunit protein L16 of Saccharomyces cerevisiae were isolated through hydroxylamine mutagenesis of the RPL16B gene and plasmid shuffling. Two...Full Text Available

1991-11-01

253

31P NMR study of improvement in oxidative phosphorylation by vitamins K3 and C in a patient with a defect in electron transport at complex III in skeletal muscle.  

UK PubMed Central (United Kingdom)

The bioenergetic capacity of skeletal muscle in a 17-year-old patient with a severe defect in complex III of the electron transport chain has been examined by 31P NMR measurements of the molar ratio...Full Text Available

1984-06-01

254

A detailed physical model for ion implant induced damage in silicon  

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational ...

1998-06-01

255

A detailed physical model for ion implant induced damage in silicon  

International Nuclear Information System (INIS)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational ...

1998-06-01

256

Weld integrity of the superconducting cable aluminium jackets of W7-X  

Energy Technology Data Exchange (ETDEWEB)

The Wendelstein 7-X (W7-X) modular stellarator is under construction at the Max-Planck-Institut fuer Plasmaphysik in Greifswald, Germany. The W7-X magnet system contains 70 coils made up from helium cooled superconducting cables in aluminium alloy (EN AW-6063) jackets. Several hundred connections of the jacket to the cable joints are made by aluminium-to-aluminium welds. Due to geometrical and thermal boundary conditions these welds cannot be accomplished free from defects. Microscopic analyses of the welds show that a variety of small flaws such as cracks and pores develop during welding. The welds have thus to be dimensioned accordingly, and appropriate weld qualification, investigation and testing has to be done in order not to jeopardise the structural integrity and leak tightness. The weld is mechanically loaded during cool-down due to the difference in thermal contractions between the GRP insulation and the aluminium, and during operation ...

2009-06-15

257

Weld integrity of the superconducting cable aluminium jackets of W7-X  

International Nuclear Information System (INIS)

The Wendelstein 7-X (W7-X) modular stellarator is under construction at the Max-Planck-Institut fuer Plasmaphysik in Greifswald, Germany. The W7-X magnet system contains 70 coils made up from helium cooled superconducting cables in aluminium alloy (EN AW-6063) jackets. Several hundred connections of the jacket to the cable joints are made by aluminium-to-aluminium welds. Due to geometrical and thermal boundary conditions these welds cannot be accomplished free from defects. Microscopic analyses of the welds show that a variety of small flaws such as cracks and pores develop during welding. The welds have thus to be dimensioned accordingly, and appropriate weld qualification, investigation and testing has to be done in order not to jeopardise the structural integrity and leak tightness. The weld is mechanically loaded during cool-down due to the difference in thermal contractions between the GRP insulation and the aluminium, and during operation ...

2009-06-01

258

Unraveling photosystems. Final technical report  

Energy Technology Data Exchange (ETDEWEB)

This report highlights four main points. (1) A residue substitution in phosphoribulokinase of Synechocystis PCC 6803 renders the mutant light-sensitive. The authors isolated a light-sensitive mutant (BRLS) of the photosynthetic cyanobacterium Synechocystis 6803 that does not survive exposure to bright light; 70% of BRLS cells die upon exposure to light of > 3000 lux for 2 hr. (2) Excitation energy transfer from phycocyanin to chlorophyll in an apcA-defective mutant of Synechocystis sp. PCC 6803. A greenish mutant of the normally bule-green cyanobacterium Synechocystis sp. PC 6803, designated UV6p, was isolated and characterized. UV6p possesses functional photosystems I and II but lacks normal light harvesting phycobilisomes because allophycocyanin is absent and core-specific linker proteins are almost entirely absent. (3) Deletion of the psbG1 gene of the cyanobacterium Synechocystis sp. PCC 6803 leads to the activation of the cryptic psbG2 gene. The genes psbG1 ...

1997-09-01

259

The rate-limiting mechanism of transition metal gettering in multicrystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell ...

1997-04-01

260

Study of the lattice parameter evolution of PWR irradiated MOX fuel by X-Ray diffraction; Etude de l'evolution du parametre cristallin des combustibles MOX irradies en rep par la methode de diffraction des rayons X  

Energy Technology Data Exchange (ETDEWEB)

Fuel irradiation leads to a swelling resulting from the formation of gaseous (Kr, Xe) or solid fission products which are found either in solution or as solid inclusions in the matrix. This phenomena has to be evaluated to be taken into account in fuel cladding Interaction. Fuel swelling was studied as a function of burn up by measuring the corresponding cell constant evolution by X-Ray diffraction. This study was realized on Mixed Oxide Fuels (MOX) irradiated in a Pressurized Water Reactor (PWR) at different burn-up for 3 initial Pu contents. Lattice parameter evolutions were followed as a function of burn-up for the irradiated fuel with and without an annealing thermal treatment. These experimental evolutions are compared to the theoretical evolutions calculated from the hard sphere model, using the fission product concentrations determined by the APPOLO computer code. Contribution of varying parameters influencing the unit cell value is discussed. Thermal treatment effects were ...

1995-07-01

261

Polycrystalline silicon thin film solar cells prepared by PECVD-SPC  

Energy Technology Data Exchange (ETDEWEB)

Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to 650-700 C for 12 h until their complete ...

2008-07-15

262

Pathogenesis of trypanosome infections in cattle  

International Nuclear Information System (INIS)

The potential application of radioisotopes are not discussed in this review of trypanosome pathogenesis in cattle. Initially, structural changes in the lymphoid system are characterized by marked proliferation and germinal centre formation, whereas in long-standing infections the lymphoid organs become depleted. These changes appear associated with immunodepression. Anaemia dominates the clinical disease syndrome in bovine trypanosomiasis. It develops with the onset of parasitaemia and is largely haemolytic, resulting from increased red blood cell destruction by phagocytosis. Several factors may be involved in this process including haemolysins produced by the trypanosome, immunological mechanisms, fever, disseminated intravascular coagulation and an expanded and active mononuclear phagocytic system. During this phase of the disease, cattle respond well to chemotherapy. However, in later phases of the disease, when trypanosomes cannot be detected, the anaemia ...

1979-05-11

263

On the effect of flux and composition on irradiation hardening at 60 C  

International Nuclear Information System (INIS)

A large matrix of simple alloys and complex commercial type steels was irradiated over a range of fluxes at 60 FC up to a fast fluence of about 3 x 10"2"2 n/m"2. Combined with data in the literature, these results show a negligible effect of flux on irradiation hardening in the range of 2 x 10"1"3 to 5 x 10"1"8 n/m"2-s. This observation lends indirect support to the proposal that the accelerated embrittlement in the High Flux Isotope Reactor surveillance steels was due to an anomalously high level of damage from gamma rays. A weak dependence of hardening on a number of elements, including copper, nickel, phosphorus, molybdenum and manganese, can be described by a simple empirical chemistry factor. Particular combinations of elements resulted in hardening differences of up to about 60% in the complex commercial type steels and up to about 100% in simple model alloys. Direct effects of microstructure appear to be minimal. Hardening varies with the square root of fluence above a threshold ...

1994-06-20

264

Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation  

Energy Technology Data Exchange (ETDEWEB)

A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening ...

2002-01-01

265

Ion backscattering, channeling and nuclear reaction analysis study of passive films formed on FeCrNi and FeCrNiMo (100) single crystals  

Energy Technology Data Exchange (ETDEWEB)

The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H{sub 2}SO{sub 4} at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the {sup 16}O(d,p) {sup 17}O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12{plus minus}2) 10{sup 15} O/cm{sup 2}. The cationic compositions of the passive films have been determined by {sup 4}He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5{plus minus}2)10{sup 15} at/cm{sup 2} is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found in the passive film formed ...

1990-01-01

266

Ion backscattering, channeling and nuclear reaction analysis study of passive films formed on FeCrNi and FeCrNiMo (100) single crystals  

International Nuclear Information System (INIS)

The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H_2SO_4 at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the "1"6O(d,p) "1"7O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12#+-#2) 10"1"5 O/cm"2. The cationic compositions of the passive films have been determined by "4He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5#+-#2)10"1"5 at/cm"2 is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found in the passive film formed on both alloys: chromium represents about 50% of the ...

1989-09-24

267

Ectopic expression of a COOH-terminal fragment of the human telomerase reverse transcriptase leads to telomere dysfunction and reduction of growth and tumorigenicity in HeLa cells.  

Science.gov (United States)

The COOH-terminus of telomerase reverse transcriptase (hTERT) has been shown to participatein the nuclear translocation of TERT. Here, we constructed plasmids expressing the COOH-terminal M(r) 27,000 polypeptide of hTERT (hTERTC27) withthe telomerase RNA-binding domains and the reverse transcriptase domains deleted. We showed that ectopic overexpression of this polypeptide caused a defect in telomere maintenance in hTERT-positive HeLa cells, which led to senescence-like growth arrest and apoptosis. The hTERTC27 appears to work by inducing telomere dysfunction, exemplified by significantly increased anaphase chromosome end-to-end fusion events in transfected cells. Significantly, it had no effect on the cellular telomerase enzymatic activity or telomere length. The in vivo effect was further demonstrated as HeLa cells stably expressing hTERTC27 have significantly lower growth rate and reduced tumorigenicity in nude mice xenografts. Results from this study revealed ...

2002-06-01

268

Application of constraint-sensitive fracture mechanics to the assessment of girth weld integrity  

Energy Technology Data Exchange (ETDEWEB)

The dominant fracture parameters used in fracture mechanics analyses of pipelines are related to the asymptotic crack-tip stress and strain fields at the crack tip. This paper reviewed new developments in constraint-sensitive fracture mechanics for the assessment of pipeline girth weld integrity. Constraint theories and experimental studies were evaluated. Constraint models included brittle fracture models and ductile fracture models. Constraint models for brittle fracture are based on weakest link statistics and Weibull distribution. Specifically designed experimental tests are often necessary to derive the damage parameters of ductile fracture models. Experimental test data must then be calibrated with finite element analyses (FEA) to ensure that the correct damage parameters are chosen. The effects of specimen geometry and loading condition are characterized by the T stress, while Q stress is the hydrostatic stress defined by the difference between stress fields, geometry and ...

2004-07-01

269

ATRX ADD domain links an atypical histone methylation recognition mechanism to human mental-retardation syndrome  

Energy Technology Data Exchange (ETDEWEB)

ATR-X (alpha-thalassemia/mental retardation, X-linked) syndrome is a human congenital disorder that causes severe intellectual disabilities. Mutations in the ATRX gene, which encodes an ATP-dependent chromatin-remodeler, are responsible for the syndrome. Approximately 50% of the missense mutations in affected persons are clustered in a cysteine-rich domain termed ADD (ATRX-DNMT3-DNMT3L, ADD{sub ATRX}), whose function has remained elusive. Here we identify ADD{sub ATRX} as a previously unknown histone H3-binding module, whose binding is promoted by lysine 9 trimethylation (H3K9me3) but inhibited by lysine 4 trimethylation (H3K4me3). The cocrystal structure of ADD{sub ATRX} bound to H3{sub 1-15}K9me3 peptide reveals an atypical composite H3K9me3-binding pocket, which is distinct from the conventional trimethyllysine-binding aromatic cage. Notably, H3K9me3-pocket mutants and ATR-X syndrome mutants are defective in both H3K9me3 binding and ...

2011-07-19

270

Superconducting Properties of Epitaxial Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA) Thin Films and Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA)/PRASEODYMIUM BARIUM(2) COPPER(3) OXYGEN(7-Z)/YTTRIUM BARIUM(2) COPPER(3) OXYGEN(7 - Heterostructures Grown by Pulsed Laser Deposition  

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a ...

1992-01-01

271

Tensile strain limits of buried defects in pipeline girth welds  

Energy Technology Data Exchange (ETDEWEB)

There are currently no accepted industry standards for the tensile strain limits of girth welds. This paper investigated the behavior of girth welds with buried defects subjected to high longitudinal strains caused by soil movement. A strain design methodology based on a crack driving method was used to examine the factors influencing stain limits along with a constraint-sensitive fracture mechanics approach. No strength undermatching was used in the welds, and the defect location had no influence on crack driving force. The weld joint was assumed to have uniform tensile properties. A 3D finite element (FE) model was used to simulate pipe behavior. Symmetric boundary conditions were imposed on the symmetry planes, and uniform remote axial displacement was applied as the primary loading. Automated data processing routines were developed to extract and analyze the data. The crack driving force was computed directly from a crack tip deformation ...

2004-07-01

272

Improved eddy-current inspection for steam generator tubing  

International Nuclear Information System (INIS)

Computer programs have been written to allow the analysis of different types of eddy-current probes and their performance under different steam generators test conditions. The probe types include the differential bobbin probe, the absolute bobbin probe, the pancake probe and the reflection probe. The generator test conditions include tube supports, copper deposits, magnetite deposits, denting, wastage, pitting, cracking, and intergranular attack. These studies are based mostly on computed values, with the limited number of test specimens available used to verify the computed results. The instrument readings were computed for a complete matrix of the different test conditions, and then the test conditions determined as a function of the readings by a least-squares technique. A comparison was made of the errors in fit and instrument drift for the different probe types. The computations of the change in instrument reading due to the defects have led to an inversion ...

1990-03-01

273

Analysis of defect detection in steam generator tubes of FBR, under support plates and in the presence of sodium using multi-frequency eddy current algorithms  

International Nuclear Information System (INIS)

In the present paper we estimate the effect of sodium in the in-service inspection of non-magnetic steam generators tubes using eddy current technique and eddy current probes based on a differential double bobbin coil configuration. Experimental measurements of defects signals in steam generator tubes of fast breeder reactor are compared with simulations results of a two-dimensional axisymmetric finite element code to validate a reliable electromagnetic model of the system (eddy current coils, steam generator tube, defect) when there is no sodium on the outer steam generator tube surface. The electromagnetic code is used to evaluate the sodium band and sodium layer signals when a defect is located under steam generator support plate. Using a multi-frequency algorithm, its parameters are determined in the 'no sodium condition' (there is no sodium on the outer steam generator tube surface), defects signal ...

2007-04-22

274

The effect of solutes on defect distributions and hardening in ion-irradiated model ferritic alloys  

International Nuclear Information System (INIS)

A series of nine model ferritic alloys were ion irradiated at #propor to#300 C using 2.5 MeV He ions to a dose of 1.4 x 10"2"1 ion/m"2, which corresponds to #propor to#0.1 dpa at a depth of 2 #mu#m and #propor to#3.5 dpa at the peak damage region which occurs at about 4 #mu#m deep. The resultant changes in hardness as a function of depth were measured using a Nanoindenter "t"r"a"d"e"m"a"r"k. TEM was used to investigate the defect distributions. The effect of various solutes, Cu and N in particular, but Mn and Ti as well, on the change of hardness and the defect distribution due to the ion irradiation are discussed. (orig.).

275

The chance finding of an aneurysm of the right sinus of Valsalva in an 11-year-old child with a ventricular septal defect and a pericardial effusion  

British Library Electronic Table of Contents (United Kingdom)

Ventricular septal defects can occur as part of other congenital cardiac malformations or as an isolated finding. Aneurysms of the sinus of Valsalva are rare, most commonly involving the right or noncoronary sinuses. They can be congenital or acquired through infection, trauma, or degenerative diseases. They frequently co-exist with ventricular septal defects, aortic valve dysfunction, or other cardiac abnormalities. More commonly, sinus of Valsalva aneurysms are diagnosed after the clinical sequelae of rupture. Several etiologic factors may lead to the development of pathologic pericardial effusion and the detection of pericardial effusion was one of the first applications of echocardiography to gain widespread acceptance. We present a case of a chance finding of an aneurysm of the right ...

2011-01-01

276

Special eddy current probes for heat exchanger inspection  

International Nuclear Information System (INIS)

Until a decade ago, only the differential bobbin type eddy current probe was considered necessary for reliable heat exchanger tube inspection. The introduction of different tube materials, manufacturing processes and a variety of service induced failures has greatly increased the demands of eddy current testing. Optimized probe designs enhanced by improved instrumentation can help satisfy some of these demands. Some of the more difficult inspection problems are detection of circumferential cracks, fretting wear under non-ferromagnetic support plates and shallow internal defects. Reliable detection and sizing of such defects is often made more difficult by the fact they frequently occur in defect prone regions such as under tubesheets or support plates and in transition regions of finned tubes. Probe designs effective in overcoming these difficulties exist. This paper describes a number of such probes and their performance.

1986-11-17

277

Repairing a 35-mm-long median nerve defect with a chitosan/PGA artificial nerve graft in the human: A case study  

British Library Electronic Table of Contents (United Kingdom)

We have developed a chitosan/polyglycolic acid (PGA) artificial nerve graft which was previously used for bridge implantation of dog sciatic nerves across 30-mm long defects. Here we describe a clinical trial of this graft for repairing a 35-mm-long median nerve defect at elbow of a human patient. During the 3-year follow-up period, functional recovery of the injured median nerve was assessed by pinch gauge test, hydraulic hand dynamometry, static two-point discrimination and touch test with monofilaments, in couple with electrophysiological examinations. The motor and sensory function of the median nerve demonstrated an ongoing recovery postimplantation, reaching M4 and S3+ levels during the follow-up period. The results indicate that the chitosan/PGA artificial nerve graft could be used ...

2008-01-01

278

Properties of different eddy-current probes for steam generator tube testing  

Energy Technology Data Exchange (ETDEWEB)

With steam generator check testing, the numerous types of defect not only have to be detected reliably but also to be identified correctly and classified according to depth. A priori, no signals are provided by the physical eddy-current mechanism, i.e. the disturbance of an excited eddy-current field by a defect, which will allow unambiguous identification and classification of the defects. The task, therefore, consists in designing the eddy-current method in terms of measurement technology in such a way as to obtain useful detection, identification and classification by a translation of the signals as simple and as save as possible. Internal through-flow wils and internal rotating probes were examined for their suitability to fulfill this three-pronged task with steam generator inspection.

1981-01-01

279

Properties of different eddy-current probes for steam generator tube testing  

International Nuclear Information System (INIS)

With steam generator check testing, the numerous types of defect not only have to be detected reliably but also to be identified correctly and classified according to depth. A priori, no signals are provided by the physical eddy-current mechanism, i.e. the disturbance of an excited eddy-current field by a defect, which will allow unambiguous identification and classification of the defects. The task, therefore, consists in designing the eddy-current method in terms of measurement technology in such a way as to obtain useful detection, identification and classification by a translation of the signals as simple and as save as possible. Internal through-flow wils and internal rotating probes were examined for their suitability to fulfill this three-pronged task with steam generator inspection. (orig./RW).

1981-01-01

280

Jumbo cups for revision of acetabular defects after total hip arthroplasty: a retrospective review of a case series  

British Library Electronic Table of Contents (United Kingdom)

The treatment of acetabular bone defects presents a great challenge in revision total hip arthroplasty (THA). The purpose of this study was to evaluate the clinical and radiological outcome of revision THA using jumbo cups for acetabular reconstruction after applying the bone-grafting technique. We studied 17?patients with acetabular defects ranging from Type 2A to Type 3A according to Paprosky`s classification. According to the AAOS-score twelve patients were classified as Type II and five patients as Type III. Uncemented press-fit cups with an outer diameter larger than 64?mm were used in all cases. Fifteen patients received morselized bone allografts. In eight patients an additional screw fixation was necessary. The mean follow-up period was 82?months (range 33?149). The mean Harris Hip...

2008-01-01

281

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion  

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

2003-11-17

282

High-temperature hysteretic electronic effects of (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P (x > 0.65)  

Science.gov (United States)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

2000-02-01

283

High-temperature hysteretic electronic effects of (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P (x > 0.65)  

Energy Technology Data Exchange (ETDEWEB)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

2000-02-01

284

Growth and defects of explosives crystals  

Energy Technology Data Exchange (ETDEWEB)

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the polymorphs'' of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes worm holes'' in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100[degrees]C lock in the mechanical twins.

1992-01-01

285

Growth and defects of explosives crystals  

Energy Technology Data Exchange (ETDEWEB)

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the ``polymorphs`` of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes ``worm holes`` in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100{degrees}C lock in the mechanical twins.

1992-12-01

286

Formation of defects in epitaxial heterostructures and multicomponent solid solutions of semiconductor compounds  

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

287

Energetic ion beams in semiconductor processing: Summary of a DOE panel study  

Energy Technology Data Exchange (ETDEWEB)

The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.

1995-12-31

288

Effect of defect local piles and dislocation multiplication on radiation hardening of metals  

International Nuclear Information System (INIS)

Computer experiments imitating specimen strain on tension with constant deformation rate have been carried out. A formation possibility of atmosphere from defects around gliding dislocations (I) and a work of Frank-Read sources (II) have been accounted for. In result deformation curves until stresses do not exceed a critical shear stress were calculated. Influence of effects (I) and (II) was analyzed. It is determined that both by pass of dislocations over defect ''atmospheres'' and dislocation multiplication can cause a peak in flow stress occurrence on the deformation curves. Reasons and conditions of such peak occurrence have been studied. 12 refs.; 9 figs. (author).

1990-05-22

289

Developments in the identification and evaluation of defects within pile foundations using dynamic tests  

Energy Technology Data Exchange (ETDEWEB)

Problems can sometimes occur during the construction of cast in-situ concrete piles. These foundations are formed by drilling a substantial hole into the ground and subsequently filling it with steel reinforcement and wet concrete. Several well-documented cases exist where concrete has not filled the hole and substantial voids have been left in the apparently completed pile. A theory has been developed by which it is possible to identify the nature, size and position of a finite defect within a suspect pile. The technique is based on the concept of receptances, and requires information obtained from vibration tests performed on piles after the concrete has hardened, and the nominal dimensions and material properties of the pile. The application of the theory is demonstrated using data relating to a pile with a known defect. The theory described in this paper ignores the effect of the surrounding soil; this can be included by further development ...

1997-07-01

290

Defect kinetics and dynamics of pattern coarsening in a two-dimensional smectic-A system  

CERN Document Server

Two-dimensional simulations of the coarsening process of the isotropic/smectic-A phase transition are presented using a high-order Landau-de Gennes type free energy model. Defect annihilation laws for smectic disclinations, elementary dislocations, and total dislocation content are determined. The computed evolution of the orientational correlation length and disclination density is found to be in agreement with previous experimental observations showing that disclination interactions dominate the coarsening process. The mechanism of smectic disclination movement, limited by the absorption and emission of elementary dislocations, is found to be facilitated by curvature walls connecting interacting disclinations. At intermediate times in the coarsening process, split-core dislocation formation and interactions displaying an effective disclination quadrupole configuration are observed. This work provides the framework for further understanding of the formation and ...

2008-01-01

291

Deep-level defects and numerical simulation of radiation damage in GaAs solar cells  

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

1991-09-01

292

Combined bony closure of oroantral fistula and sinus lift with mandibular bone grafts for subsequent dental implant placement  

British Library Electronic Table of Contents (United Kingdom)

Sinus lifting and reconstruction of localized alveolar defects are often required after closure of a large oroantral fistula (OAF) to allow for subsequent implant installation. This study describes a combined surgical technique that involves sinus lifting, bony closure, and reconstruction of the alveolar defect at the site of an OAF. The sinus membrane was reconstructed as a continuous layer by combining the residual sinus membrane with a rotated part of oral mucosa around the OAF. Autogenous bone from the chin and/or ramus was grafted into the prepared sinus space and alveolar defect, and the graft was covered by a buccal advancement flap. This technique was used to treat 8 patients who had large OAFs in the posterior maxillary region. The treatment was successful in all cases, and the te...

2011-01-01

293

Calculation of the hyperfine constants of the V sub (K) center in CaF_2, SrF_2 e BaF_2  

International Nuclear Information System (INIS)

The magnetic hyperfine constants of the V sub(K) center in CaF_2, SrF_2 and BaF_2 have been calculated, assuming a phenomenological model, based on the F"-_2 'central molecule', to describe the wave function of the defect. The introduction of covalence with the ions neighboring the 'central molecule', has shown that this is a better description for the defect than a simple 'central molecule' model. It was also shown that the results for the hyperfine constants are strongly dependent on the relaxations of these neighboring ions, which have been determined by fitting the experimental data. The present results are compared with other previous calculations where similar and different methods have been used. A better description for the wave function of the defect is suggested. (author).

2004-06-02

294

aHUS caused by complement dysregulation: new therapies on the horizon  

UK PubMed Central (United Kingdom)

Atypical hemolytic uremic syndrome (aHUS) is a heterogeneous disease that is caused by defective complement regulation in over 50% of cases. Mutations have been identified in genes encoding both complement...Full Text Available

2011-01-01

295

The red-green visual pigment gene region in adrenoleukodystrophy.  

UK PubMed Central (United Kingdom)

Although recent data established that a specific very-long-chain fatty acyl-CoA synthetase is defective in X-linked adrenoleukodystrophy (ALD), the ALD gene is still unidentified. The ALD locus has...Full Text Available

1990-03-01

296

The radiation hardening and microstructural defect evolution in ion irradiated Fe-Cr alloys with irradiation temperature  

International Nuclear Information System (INIS)

Generally, neutron, ion and electron Irradiations cause a substantial amount of hardening and significantly alter the deformation behavior of metals and alloys at relatively low irradiation temperatures. A radiation hardening is caused by the formation of microstructural defects such as dislocation loops, voids and precipitates under irradiation. Therefore, it is important to have a better knowledge of the irradiation induced microstructural defects under irradiation condition. As a part of the National mid- and long-term atomic energy R and D program, we are dealing with the radiation hardening behavior in Fe-Cr binary alloy. Fe-Cr binary alloy is a base alloy of Ferritic/Martensitic steel(F/M steel) planning to use for the Gen IV nuclear system. In this work, we investigated the radiation hardening and microstructural defect evolution in ion irradiated Fe-Cr alloys with irradiation temperature using nano-indentation ...

2009-05-01

297

The effect of boron implant energy on transient enhanced diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results ...

1997-02-01

298

The Spectrum of Monogenic Autoinflammatory Syndromes: Understanding Disease Mechanisms and Use of Targeted Therapies  

UK PubMed Central (United Kingdom)

Monogenic autoinflammatory diseases encompass a distinct and growing clinical entity of multisystem inflammatory diseases with known genetic defects in the innate immune system. The diseases...Full Text Available

2008-07-01

299

The Dystrophin Complex Controls BK Channel Localization and Muscle Activity in Caenorhabditis elegans  

UK PubMed Central (United Kingdom)

Genetic defects in the dystrophin-associated protein complex (DAPC) are responsible for a variety of pathological conditions including muscular dystrophy, cardiomyopathy, and vasospasm. Conserved DAPC...Full Text Available

2009-12-01

300

The Arabidopsis ref2 Mutant Is Defective in the Gene Encoding CYP83A1 and Shows Both Phenylpropanoid and Glucosinolate Phenotypes  

UK PubMed Central (United Kingdom)

The Arabidopsis ref2 mutant was identified in a screen for plants having altered fluorescence under UV light. Characterization of the ref2 mutants showed that they...Full Text Available

2003-01-01

301

Stromal-Derived Factor-1 (CXCL12) Regulates Laminar Position of Cajal-Retzius Cells in Normal and Dysplastic Brains  

UK PubMed Central (United Kingdom)

Normal brain development requires a series of highly complex and interrelated steps. This process presents many opportunities for errors to occur, which could result in developmental defects...Full Text Available

2006-09-13

302

Stem Cell Therapies Benefit Alport Syndrome  

UK PubMed Central (United Kingdom)

Patients with Alport syndrome progressively lose renal function as a result of defective type IV collagen in their glomerular basement membrane. In mice lacking the α3 chain of type IV collagen...Full Text Available

2009-11-01

303

Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs  

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the ...

2006-10-15

304

Rejuvenating somatotropic signaling: a therapeutical opportunity for premature aging?  

UK PubMed Central (United Kingdom)

We have recently reported that progeroid Zmpste24−/− mice, which exhibit multiple defects that phenocopy Hutchinson-Gilford progeria syndrome, show a profound dysregulation...Full Text Available

305

Properties of a cell-wall-defective variant of Brucella abortus of bovine origin.  

UK PubMed Central (United Kingdom)

The properties of an atypical Brucella strain isolated from lymph node tissue of a cow slaughtered as a brucellosis reactor were examined. The organism was Gram negative and highly pleomorphic, existing...Full Text Available

1980-08-01

306

Prenatal cocaine reduces AMPA receptor synaptic expression through hyperphosphorylation of the synaptic anchoring protein GRIP  

UK PubMed Central (United Kingdom)

Prenatal cocaine exposure produces sustained neurobehavioral and brain synaptic changes closely resembling those of animals with defective alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic...Full Text Available

2009-05-13

307

Platelet-derived growth factor inhibits bone regeneration induced by osteogenin, a bone morphogenetic protein, in rat craniotomy defects.  

UK PubMed Central (United Kingdom)

Platelet-derived growth factor (PDGF) is a potent moderator of soft tissue repair through induction of the inflammatory phase of repair and subsequent enhanced collagen deposition. We examined the effect...Full Text Available

1993-12-01

308

Osterix Overexpression in Mesenchymal Stem cells Stimulates Healing of Critical-Sized Defects in Murine Calvarial Bone  

UK PubMed Central (United Kingdom)

Osterix (Osx) is a zinc-finger-containing transcription factor that is expressed in osteoblasts of all endochondral and membranous bones. In Osx null ...Full Text Available

2007-10-01

309

Oligomycin-induced Bioenergetic Adaptation in Cancer Cells with Heterogeneous Bioenergetic Organization  

UK PubMed Central (United Kingdom)

Cancer cells constantly adapt to oxidative phosphorylation (OXPHOS) suppression resulting from hypoxia or mitochondria defects. Under the OXPHOS suppression, AMP-activated protein kinase (AMPK) regulates...Full Text Available

2010-04-23

310

Mitigation of muscular dystrophy in mice by SERCA overexpression in skeletal muscle  

UK PubMed Central (United Kingdom)

Muscular dystrophies (MDs) comprise a group of degenerative muscle disorders characterized by progressive muscle wasting and often premature death. The primary defect common to most MDs involves disruption...Full Text Available

2011-03-01

311

Mesh repair of a coccygeal hernia via an abdominal approach.  

UK PubMed Central (United Kingdom)

We report on the presentation and management of a patient with herniation of the rectum following a coccygectomy. We used an abdominal approach and careful pelvic dissection to define the defect in...Full Text Available

2000-03-01

312

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon  

Energy Technology Data Exchange (ETDEWEB)

Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms ...

1996-09-01

313

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon  

International Nuclear Information System (INIS)

Ion implantation of Si (60 keV, 1x10"1"4/cm"2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1x10"1"8 and 1x10"1"9/cm"3. Following post-implantation annealing at 740 degree C for 15 min to allow agglomeration of the available interstitials into elongated #left brace#311#right brace# defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in #left brace#311#right brace# defects as a function of boron concentration, up to nearly complete disappearance of the #left brace#311#right brace# defects at boron concentrations of 1x10"1"9/cm"3. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, ...

314

Geometrically anisotropic probes: an improved eddy current technique  

Energy Technology Data Exchange (ETDEWEB)

Geometrically anisotropic eddy current probes are a type of separate function probes especially fit to the detection of defects showing a preferential direction. This kind of flaw induces a coupling between the transmitter and the receiver by guiding eddy currents from the one to the other. On the other hand, this coupling will be almost non-existent in the presence of defects or spurious effects not displaying this geometrical particularity. Basic studies on an elementary two-coil set-up allow the acknowledgment of the intrinsic qualities of such probes: good signal-to-noise ratio, influence field practically constant on the whole defect length, ability to detect bridged defects, insensitivity to lift off. These results can be improved by achieving multicoils probes adapted to different kinds of problems. An application to continuous casting slabs testing yields very interesting results in the ...

1987-06-01

315

Gene expression profiling of oxidative stress response of C. elegans aging defective AMPK mutants using massively parallel transcriptome sequencing  

UK PubMed Central (United Kingdom)

BackgroundA strong association between stress resistance and longevity in multicellular organisms has been established as many mutations that extend lifespan also show increased...Full Text Available

316

Extended defects in A-15 superconductors  

International Nuclear Information System (INIS)

A brief review is given of the nature of lattice instabilities in high-T/sub c/ superconductors. The Frohlich instability in A-15 compounds is indicated to be a microdomain which acts as an embryo for the Martensitic transformations in these compounds.

317

Endogenous expression of HrasG12V induces developmental defects and neoplasms with copy number imbalances of the oncogene  

UK PubMed Central (United Kingdom)

We developed mice with germline endogenous expression of oncogenic Hras to study effects on development and mechanisms of tumor initiation. They had high perinatal mortality, abnormal...Full Text Available

2009-05-12

318

ELECTRONIC COMPONENT COOLING ALTERNATIVES: COMPRESSED AIR AND LIQUID NITROGEN  

Science.gov (United States)

The goal of this study was to evaluate topics used to troubleshoot circuit boards with known or suspected thermally intermittent components. Failure modes for thermally intermittent components are typically mechanical defects, such as cracks in solder paths or joints, or broken b...

319

Disruption of Circulation by Ethanol Promotes Fetal Alcohol Spectrum Disorder (FASD) in Medaka (Oryzias latipes) Embryogenesis  

UK PubMed Central (United Kingdom)

Japanese medaka (Oryzias latipes) embryos exposed to ethanol have developed craniofacial, cardiovascular and skeletal defects which can be compared with the phenotypic features...Full Text Available

2008-09-01

320

Developmental alcohol exposure disrupts circadian regulation of BDNF in the rat suprachiasmatic nucleus  

UK PubMed Central (United Kingdom)

In rats, damage to neuronal populations in some brain regions occurs in response to neonatal alcohol exposure coinciding with the period of rapid brain growth. These alcohol-induced defects...Full Text Available

2004-01-01

321

Defects induced by focused ion beam implantation in GaAs  

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

1988-05-01

322

Defects induced by focused ion beam implantation in GaAs  

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

323

Defects in the Secretory Pathway and High Ca2+ Induce Multiple P-bodies  

UK PubMed Central (United Kingdom)

mRNA is sequestered and turned over in cytoplasmic processing bodies (PBs), which are induced by various cellular stresses. Unexpectedly, in Saccharomyces cerevisiae, mutants of the...Full Text Available

2010-08-01

324

Defects in succinate dehydrogenase in gastrointestinal stromal tumors lacking KIT and PDGFRA mutations  

UK PubMed Central (United Kingdom)

Carney-Stratakis syndrome, an inherited condition predisposing affected individuals to gastrointestinal stromal tumor (GIST) and paraganglioma, is caused by germline mutations in succinate dehydrogenase...Full Text Available

2011-01-04

325

Defective major histocompatibility complex class I expression on lymphoid cells in autoimmunity.  

UK PubMed Central (United Kingdom)

Lymphocytes from patients with insulin-dependent diabetes mellitus (IDDM), a chronic autoimmune disease, have recently been shown to have decreased surface expression of MHC class I antigens. Since...Full Text Available

1993-05-01

326

DNA methylation and gene expression differences in children conceived in vitro or in vivo  

UK PubMed Central (United Kingdom)

Epidemiological data indicate that children conceived in vitro have a greater relative risk of low birth-weight, major and minor birth defects, and rare disorders involving imprinted...Full Text Available

2009-10-15

327

DEFECT SELECTIVE ETCHING OF THICK ALN LAYERS GROWN ON 6H-SIC SEEDS - A TRANSMISSION ELECTRON MICROSCOPY STUDY  

Energy Technology Data Exchange (ETDEWEB)

In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is ...

2008-03-01

328

Control of diffusion of implanted boron in preamorphized Si: Elimination of interstitial defects at the amorphous-crystal interface  

Energy Technology Data Exchange (ETDEWEB)

Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B{sup +}-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the {open_quotes}excess{close_quotes} interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO{sub 2} interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be discussed. {copyright} {ital 1999 American ...

1999-02-01

329

Comparative Evaluation of Nanofibrous Scaffolding for Bone Regeneration in Critical-Size Calvarial Defects  

UK PubMed Central (United Kingdom)

In a previous study we found that nanofibrous poly(l-lactic acid) (PLLA) scaffolds mimicking collagen fibers in size were superior to solid-walled scaffolds in promoting osteoblast differentiation...Full Text Available

2009-08-01

330

Case Reports: Fractures of Threaded Cups: Rare Complications of a Well-established Implant  

UK PubMed Central (United Kingdom)

The use of cementless threaded cups in THA is a well-established treatment. Fractures of the cups are rare complications recorded in individual cases with material defects being discussed as the primary...Full Text Available

2009-03-01

331

Behavioral Defects in Chaperone-Deficient Alzheimer's Disease Model Mice  

UK PubMed Central (United Kingdom)

Molecular chaperones protect cells from the deleterious effects of protein misfolding and aggregation. Neurotoxicity of amyloid-beta (Aβ) aggregates and their deposition in senile plaques are...Full Text Available

332

Abnormalities of GATA-1 in Megakaryocytes from Patients with Idiopathic Myelofibrosis  

UK PubMed Central (United Kingdom)

The abnormal megakaryocytopoiesis associated with idiopathic myelofibrosis (IM) plays a role in its pathogenesis. Because mice with defective expression of transcription factor GATA-1 (GATA-1low...Full Text Available

2005-09-01

333

A Mouse Model Expressing a Truncated Form of Ameloblastin Exhibits Dental and Junctional Epithelium Defects  

UK PubMed Central (United Kingdom)

SUMMARYAmeloblastin (AMBN) is the second most abundant extracellular matrix protein produced by the epithelial cells called ameloblasts and is found mainly in forming dental enamel....Full Text Available

2009-06-01

334

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

1998-09-18

335

Ten-nanometer surface intrusions in room temperature silicon  

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

2002-01-01

336

Power cables: methods of defects localization; Cables d'energie: methodes de localisation des defauts  

Energy Technology Data Exchange (ETDEWEB)

The defects localization in power cables follows several steps: identification, pre-localization and precise localization. Pre-localization methods, other than echo-metry, are presented first: bridge methods, particular case of low voltage networks, future perspectives. Then, the precise localization methods are described: magneto-acoustic method, audible frequencies method. The particular case of underwater and high-voltage cables is considered too (oil and gas leaks detection). (J.S.)

2006-08-15

337

Application of wavelet analysis to signal processing methods for eddy-current test; ueburetto kaiseki no kadenryushinshoho heno tekiyo  

Energy Technology Data Exchange (ETDEWEB)

This study deals with the application of wavelet analysis to detection and characterization of defects from eddy-current and ultrasonic testing signals of a low signal-to-noise ratio. Presented in this paper are the methods for processing eddy-current testing signals of heat exchanger tubes of a steam generator in a nuclear power plant. The results of processing eddy-current testing signals of tube test pieces with artificial flaws show that the flaw signals corrupted by noise and/or non-defect signals can be effectively detected and characterized by using the wavelet methods. (author)

1998-12-15

338

Patterns of vascular invasion of intrahepatic peripheral cholangiocarcinoma examined with angiography and angiographic CT  

International Nuclear Information System (INIS)

To evaluate the radiological patterns of vascular invasion in peripheral cholangiocarcinomas. Hepatic arteriography and portography in 20 cases with cholangiocarcinoma including 12 cases with angiographic CT were retrospectively analyzed. The arteriography showed no arterioportal shunt, hypertrophy of tumor vessel, or tumor staining extending to central portion of the mass in all cases. However, doughnut shaped peripheral tumor staining was seen until late hepatogram phase in 12 cases and compensatory hyperperfusion around the mass was seen in six cases (eight cases if include arterial CT). Encasement of tumor vessel was seen in 12 cases, and hypertrophy of feeding vessel in nine cases. On portography, the filling defect on segmental portal branch could be demonstrated only in 11 cases. Shape of the portal defect was tapered narrowing in six cases, abrupt narrowing in two cases but intraluminal nodular filling defect was ...

1995-01-01

339

On-line measurement and inspection technologies of surface properties of steel sheets; Koban hyomen hinshitsu no onrain keisoku oyobi kensa gijutsu  

Energy Technology Data Exchange (ETDEWEB)

In steel production lines such as pickling lines, cold rolling mills and coil processing lines, the needs for on-line continuous measurement of surface quality and property of products and on-line inspection of surface defects have become strong. This is because user requirements for the surface quality of various products have become severer than before and besides, expectations are running high on the side of manufacturers for higher speeds of production lines and higher quality by the adoption of automatic inspection. As for the measurement of surface quality, continuous measurements along the full length of a steel strip are required in order to overcome problems derived from off-line, batch measurements that cannot satisfy user's demands for quality assurance. As for surface defects detection, various kinds of methods have been practically applied to production lines. However, it is the matter of fact that performances of these ...

1999-12-01

340

Impacts of defects on the serviceability of shafts and housings of steam turbines; Einfluss von Fehlstellen auf die Gebrauchseigenschaften von Wellen und Gehaeusen von Dampfturbinen  

Energy Technology Data Exchange (ETDEWEB)

The evaluation of possible manufacture-based defects in turbine shafts and housings for component serviceability relevance is of particular interest not only in post-manufacturing NDT but also in evaluation of NDT results obtained by in-service inspections of components with long service lives. The results discussed in the paper are summarized as follows: Most of the examined natural defects in the forgings and castings behave like cracks under the simulated operating conditions and hence may well be evaluated by fracture mechanical methods for their serviceability relevance determined by crack propagation under fatigue, creep and creep-fatigue stress. The empirical correlation of true defect size and US testing results (echo signal, echodynamics, attenuation) permits improved determination of true defect sizes in the turbine components. Care has to be taken to select the proper testing and evaluation ...

1996-12-31

341

Wisconsinan-Holocene seismic stratigraphy of the Keathley Canyon Area and vicinity, northwestern Gulf of Mexico  

Science.gov (United States)

The lower continental slope of the northwestern Gulf of Mexico is characterized by a hummocky topography with shallow salt masses interspersed by numerous salt-withdrawal basins containing thick Plio-Pleistocene and older sediments. Analysis of over 7500 km of multichannel seismic reflection data from the Keathley Canyon Area and vicinity defined the Wisconsinan-Holocene sequence and its seismic facies. In interbasinal areas and in the southern part of the study area where salt is shallow, the Wisconsinan-Holocene sequence consists mainly of low-amplitude (LA) facies underlain by strong basal-reflection (SBR) facies. The LA facies occasionally show subtle onlaps against SBR facies and grade upward into a draping pattern. Onlapping LA facies are interpreted to be a lowstand systems tract deposited by widespread low-energy turbidity currents. Draping LA facies at the top may consist of hemipelagic or pelagic sediments. The SBR facies are interpreted to consist of condensed sections ...

1991-03-01

342

Simulated nitrogen deposition affects wood decomposition by cord-forming fungi.  

Science.gov (United States)

Anthropogenic nitrogen (N) deposition affects many natural processes, including forest litter decomposition. Saprotrophic fungi are the only organisms capable of completely decomposing lignocellulosic (woody) litter in temperate ecosystems, and therefore the responses of fungi to N deposition are critical in understanding the effects of global change on the forest carbon cycle. Plant litter decomposition under elevated N has been intensively studied, with varying results. The complexity of forest floor biota and variability in litter quality have obscured N-elevation effects on decomposers. Field experiments often utilize standardized substrates and N-levels, but few studies have controlled the decay organisms. Decomposition of beech (Fagus sylvatica) blocks inoculated with two cord-forming basidiomycete fungi, Hypholoma fasciculare and Phanerochaete velutina, was compared experimentally under realistic levels of simulated N deposition at Wytham Wood, Oxfordshire, ...

2011-07-01

343

Optimizing the fMRI data-processing pipeline using prediction and reproducibility performance metrics: I. A preliminary group analysis.  

Science.gov (United States)

We argue that published results demonstrate that new insights into human brain function may be obscured by poor and/or limited choices in the data-processing pipeline, and review the work on performance metrics for optimizing pipelines: prediction, reproducibility, and related empirical Receiver Operating Characteristic (ROC) curve metrics. Using the NPAIRS split-half resampling framework for estimating prediction/reproducibility metrics (Strother et al., 2002), we illustrate its use by testing the relative importance of selected pipeline components (interpolation, in-plane spatial smoothing, temporal detrending, and between-subject alignment) in a group analysis of BOLD-fMRI scans from 16 subjects performing a block-design, parametric-static-force task. Large-scale brain networks were detected using a multivariate linear discriminant analysis (canonical variates analysis, CVA) that was tuned to fit the data. We found that tuning the CVA model and spatial smoothing ...

2004-01-01

344

Manganite reduction by Shewanella putrefaciens MR-4  

Energy Technology Data Exchange (ETDEWEB)

Previous studies have documented dissimilatory growth of bacteria on solid Mn{sup 4+} oxide, but Mn{sup 3+} oxides have not been previously studied; here the authors have demonstrated for the first time the bacterial reduction of manganite. Strain MR-4 of Shewanella putrefaciens was able to grow on and rapidly reduce insoluble needle-shaped crystals of synthetic manganite (MnOOH), converting them to soluble Mn{sup 2+} in the process. The rate of Mn{sup 3+} reduction was optimal at pH of 7.0 and 26 C consistent with an enzymatic reaction. In addition the rates of reduction were in proportion to the amount of manganite added, but nearly independent of the cell concentration present (e.g., cell number had only a small effect on the rate of Mn{sup 3+} reduction at early stages of growth) suggesting that surface properties were dictating the rates of metal reduction. This thesis was supported by major differences in reduction rates when Mn oxides of different surface areas were studied. ...

1998-11-01

345

Luminous HC3N line emission in NGC4418 - buried AGN or nascent starburst?  

CERN Document Server

IRAM 30m observations reveal that the deeply obscured IR-luminous galaxy NGC4418 has a rich molecular chemistry - including unusually luminous HC3N line emission. We furthermore detect: ortho-H2CO 2-1, 3-2; CN 1-0, 2-1; HCO+, 1-0. 3-2, HCN 3-2, HNC 1-0, 3-2 (and tentatively OCS 12-11). The HCN, HCO+, H2CO and CN line emission can be fitted to densities of n=5 x 10E4 - 10E5 cm-3 and gas temperatures Tk=80-150 K. Both HNC and HC3N are, however, significantly more excited than the other species which requires higher gas densities - or radiative excitation through e.g. mid-IR pumping. The HCN line intensity is fainter than that of HCO+ and HNC for the 3-2 transition, in contrast to previous findings for the 1-0 lines where the HCN emission is the most luminous. We tentatively suggest that the observed molecular line emission is consistent with a young starburst, where the emission can be understood as emerging from dense, warm gas with an additional PDR component. We ...

2007-01-01

346

Imaging of coronary artery stents using multislice computed tomography: in vitro evaluation  

Energy Technology Data Exchange (ETDEWEB)

The aim of this study was to evaluate imaging features of different coronary artery stents during multislice CT Angiography (MSCTA). Nineteen stents made of varying material (steel, nitinol, tantalum) and of varying stent design were implanted in plastic tubes with an inner diameter of 3 mm to simulate a coronary artery. The tubes were filled with iodinated contrast material diluted to 200 Hounsfield units (HU), closed at both ends and positioned in a plastic container filled with oil (-70 HU). The MSCT scans were obtained perpendicular to the stent axes (detector collimation 4 x 1 mm, table feed 2 mm/rotation, 300 mAs, 120 kV). Axial images and multiplanar reformations were evaluated regarding artifact size, lumen visibility, and intraluminal attenuation values. Artifacts characterized by artifactual thickening of the stent struts leading to apparent reduction in the lumen diameter and increased intraluminal attenuation values were observed in all cases. The stent lumen was totally ...

2003-04-01

347

Analyses of steel liners on concrete structures  

Science.gov (United States)

A post-accident-heat-removal structural effects analysis for the steel liner in the FFTF concrete containment structure is presented. (JWR)

1975-06-01

348

Creative Australia  

Wastenet

The structure of the creative industries is changing 15

349

Investigations on solar grade silicon and process engineering of advanced silicon solar cells  

Energy Technology Data Exchange (ETDEWEB)

This thesis deals with the evaluation of Solar Grade Silicon (SoG-Si) purified by different techniques, and also the fabrication and characterization of high efficiency and advanced bifacial solar cells. In the beginning of Chapter 1, various SoG-Si production methods relevant for this work are qualitatively described. The three feedstock materials used in this work are from the Fluidized Bed Reactor (FBR) process, metallurgical feedstock-I and feedstock-II process. In metallurgical feedstock-I, the lifetime of the minority charge carriers in multicrystalline silicon (mc-Si) samples at the grain boundaries are found to be higher than the grains themselves possibly due to lower resistivities in the grain boundaries. The efficiency of the best solar cell obtained using the mc-Si metallurgical feedstock-I is 16.1%. It has been identified that the fast light induced degradation, whose magnitude is lower than that of a reference cell suggests the formation of a B-metal complex in the SoG-Si ...

2007-07-01

350

Transient enhanced diffusion of dopants in preamorphized Si layers  

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial ...

1997-11-01

351

Transient enhanced diffusion of dopants in preamorphized Si layers  

International Nuclear Information System (INIS)

Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial ...

1996-12-02

352

Simulation of dopant diffusion and activation during flash lamp annealing  

International Nuclear Information System (INIS)

A set of advanced models implemented into the simulator Sentaurus Process was applied to simulate ultra shallow junction formation by flash lamp annealing (FLA). The full path transient enhanced diffusion model includes equations for small interstitial clusters (I_2, I_3, I_4), #left brace#3 1 1#right brace# defects and dislocation loops. A dopant-point defect clustering model is used for dopant activation simulation. Several cluster types are considered: B_2, B_2I, B_2I_2, B_3I, B_3I_2, B_3I_3 for boron and As_2, As_2V, As_3, As_3V, As_4, As_4V for arsenic. Different point defect and dopant-point defect pair charge states are taken into account to obtain accurate results in the high doping level region. The flux expressions in the three-phase segregation model include a dependence on the doping level and point defect supersaturation. The FLA process was performed at various peak ...

2008-12-05

353

Rapid yield learning through optical defect and electrical test analysis  

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device density and wafer area continue to increase, the volume of in-line and off-line data required to diagnose yield-limiting conditions is growing exponentially. To manage this data in the future, analysis tools will be required that can automatically reduce this data to useful information, e.g., by assisting the engineer in rapid root-cause diagnosis of defect generating mechanisms. In this paper, the authors describe a technology known as Spatial Signature Analysis (SSA) and its application to both optically-detected defect data as well as electrical test (e-test) bin data. The results of a validation study are summarized that demonstrate the effectiveness of the SSA approach on optical defect wafermaps through field-testing at three semiconductor manufacturing sites on ASIC, DRAM and SRAM products. This method has been extended to analyze and interpret electrical test data and to provide a pathway for ...

1998-02-01

354

Unclas  

Science.gov (United States)

Another difference lies in the speed of star evolution. 2. Computation of Stellar Structure and Their Evolution. The structure of stars at certain instants ...

355

Structural steels with improved atmospheric corrosion resistance  

CERN Document Server

Structural steels with improved atmospheric corrosion resistance

2003-01-01

357

Molybdenum Alloys Optimal Structure  

International Science & Technology Center (ISTC)

Determination of Special Molybdenum Alloys Optimal Structure Using the Cybernetic Method

359

Advances in metallography. Fortschritte in der Metallographie  

Energy Technology Data Exchange (ETDEWEB)

The 52 papers discuss the following subjects: 1. Preparation and structural development; 2. Structural constitution; 3. Structural formation and phase transition; 4. Structure and mechanical properties; 5. Structural formation of metallic and nonmetallic materials; 6. Quantitative metallography, and 7. Quality assurance.

1983-01-01

360

Ultrasonic Phased Array Implementation of the Inside Diameter Creeping Wave Sizing Method  

Energy Technology Data Exchange (ETDEWEB)

This paper describes a technique for implementing the ultrasonic inside diameter (ID) creeping wave technique for detection and sizing ID connected defects using a phased array ultrasonic system. The technique uses multiple focal laws to produce the examination modes. The first focal law is designed to create a shear wave nominally at the critical angle for mode conversion to a longitudinal wave at the ID of a part, thus creating a creeping wave. This focal law is focused at the ID to improve sensitivity. The rest of the laws are designed to create tandem sound paths that progress up a vertical surface directly above the focal point of the creeping wave generation point. When a defect on the inner surface is detected with the creeping wave, the height of the defect can be measured from the response of a set of tandem laws without readjusting the position of the probe. Results from standard one-inch long notches of varying ...

2006-05-01

361

Transbilayer and interbilayer phospholipid exchange in dimyristoylphosphatidylcholine/dimyristoylphosphatidylethanolamine large unilamellar vesicles  

International Nuclear Information System (INIS)

The rates of spontaneous interbilayer and transbilayer exchange of ["3H]dimyristoylphosphatidylcholine (["3H]DMPC) were examined in the DMPC and DMPC/dimyristoylphosphatidylethanolamine (DMPE) large unilamellar vesicles in the liquid-crystalline-, gel-, and mixed-phase states. DMPC desorption rates from either gel or liquid-crystalline phases containing DMPE are very similar to the corresponding rates from pure DMPC gel or liquid-crystalline phases. The authors proposed that the DMPC/DSPC behavior results from packing defects in gel phases composed of both DMPC and DSPC molecules because of the four-carbon difference in the acyl chain lengths of the two species. The present results strongly support this hypothesis because no such anomalous behavior is observed in DMPC/DMPE, which is similar to DMPC/DSPC in phase behavior but does not have the chain length difference. These results are not consistent with lipid headgroup dehydration as the major energetic barrier to ...

362

The use of biodegradable polylactic acid barrier materials in the treatment of grade II periodontal furcation defects in humans--Part II: A multicenter investigative surgical study.  

Science.gov (United States)

This study evaluated whether differences in design of 3-dimensional polylactic acid barriers (EPi-Guide and Guidor) would influence hard tissue results in the treatment of Grade II furcations in humans. A multicenter study was conducted, using 40 patients with moderate to advanced bilateral chronic adult periodontitis of the mandibular first or second molars. After flap access, debridement, and root preparation, surgical bone level measurements were taken and membranes were placed on a random basis. Surgical reentry occurred at 1 year. Data collected from all 3 investigative centers were pooled and analyzed using an analysis of variance appropriate for a counterbalancing design. Both barrier materials resulted in significant gains of attachment level and defect reduction. The composite reduction in the vertical component of the osseous defects was greater in the sites treated with Epi-Guide as compared to those treated with Guidor; the ...

1999-02-01

363

Silicon front-end technology -- Materials processing and modeling. Materials Research Society symposium proceedings Volume 532  

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; extended defects and transient enhanced ...

1998-07-01

364

Replication-defective vectors of reticuloendotheliosis virus transduce exogenous genes into somatic stem cells of the unincubated chicken embryo  

Energy Technology Data Exchange (ETDEWEB)

Replication-defective vectors derived from reticuloendotheliosis virus were used to transduce exogenous genes into early somatic stem cells of the chicken embryo. One of these vectors transduced and expressed the chicken growth hormone coding sequence. The helper cell line, C3, was used to generate stocks of vector containing about 10/sup 4/ transducing units per ml. Injection of 5- to 20-..mu..l volumes of vector directly beneath the blastoderm of unincubated chicken embryos led to infection of somatic stem cells. Infected embryos and adults contained unrearranged integrated proviral DNAs. Embryos expressed the transduced chicken growth hormone gene and contained high levels of serum growth hormone. Blood, brain, muscle, testis, and semen contained from individuals injected as embryos contained vector DNA. Replication-defective vectors of the reticuloendotheliosis virus transduced exogenous genes into chicken embryonic stem cells in vivo.

1989-06-01

365

Point defect engineering in preamorphized silicon enriched with fluorine  

International Nuclear Information System (INIS)

Fluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed that F is not only able ...

2006-12-01

366

Ion beams in silicon processing and characterization  

Energy Technology Data Exchange (ETDEWEB)

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional ...

1997-05-01

367

Human bone matrix gelatin as a clinical alloimplant. A retrospective review of 160 cases.  

Science.gov (United States)

Bone matrix gelatin, prepared by sequential chemical treatment including decalcification with 0.6 N hydrochloric acid [9], was used as an alloimplant for the treatment of benign bone tumours, tumorous conditions of bone, acetabular dysplasia, delayed union, traumatic bone defects and other disorders. The bone matrix gelatin implanted into bone defects was incorporated successfully in 98% of implantations, excluding cases of infection, tumour recurrence and recurrence of tumorous conditions. The material was also implanted into ten bone sites as an onlay but in five it was resorbed without new bone formation. The incorporation of the bone matrix gelatin into the recipient bed was completed from 6 to 33 months (average 14.9 months) after implantation. Wound infection complicated 5 of 165 implantations (3%) in previously uninfected sites. Low grade fever persisting after the tenth post-operative day (a probable sign of immunological reaction) ...

1985-01-01

368

High-dose neutron-irradiation effects in fcc metals at 4.6 K  

International Nuclear Information System (INIS)

The rate of residual-resistivity increase and the isochronal recovery have been studied on the fcc metals Al, Ni, Cu, Pd, Ag, Pt, and Au irradiated at 4.6 K with reactor neutrons to a dose of about 10"1"9 (fast neutrons)/cm"2. The rate of resistivity increase is nonlinear as a function of irradiation-induced resistivity; computer analysis shows that the data are best fitted with an erxpression having up to third-order terms in #DELTA#rho. There are deviations from simple damage-rate theory in all cases, but an anomalous negative deviation from a linear law (convex curvature) is observed in Ni, Pd, Pt (and Fe). This behavior is most probably caused by a decrease of the specific Frenkel-defect resistivity due to defect clustering, an effect which should contribute in all metals after fast-neutron irradiation to high doses. Saturation values of resistivity and defect concentration as well as recombination volumes have veen ...

1977-12-01

369

Hardening by point defects in neutron irradiated AlN and SiC  

International Nuclear Information System (INIS)

Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for ...

370

Eddy current inspection of superconducting cable during manufacturing  

Energy Technology Data Exchange (ETDEWEB)

The downstream failure of cable during winding, insulating, coil winding, and coil assembly is a significant issue in magnet production. The impact of these failures are costly both financially, and from the time to recover from this downstream failure. The current approach to cabling has been to visually inspect the cable for any gross defects during cabling. To date this has been effective in finding small defects such as crossovers for example, which drastically reduce the mechanical integrity of the strand, and thus the cable itself. But because of the large volume of cable which will be manufactured an automated flaw detection system which can inspect the cable and detect these type of defects will be needed. We have recently done an on-line experiment using an Eddy current system, and specialized Eddy current probes to inspect cable during manufacturing. We will present the results of our inspection demonstrating ...

1992-03-01

371

Eddy current inspection of superconducting cable during manufacturing  

International Nuclear Information System (INIS)

The downstream failure of cable during winding, insulating, coil winding, and coil assembly is a significant issue in magnet production. The impact of these failures is costly both financially and because of the time needed to recover from them. The current approach to cabling has been to visually inspect the cable for any gross defects during cabling. To date this has been effective in finding small defects such as crossovers, which drastically reduce the mechanical integrity of the strand and thus of the cable itself. But because of the large volume of cable that will be manufactured, an automated flaw detection system that can inspect the cable and detect these types of defects will be needed. We have recently done an on-line experiment using an Eddy current system and specialized Eddy current probes to inspect cable during manufacturing. We will present the results of our inspection, demonstrating detection of ...

1992-03-04

372

Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...

1989-03-01

373

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si{sub 1-y}C {sub y} in silicon  

Energy Technology Data Exchange (ETDEWEB)

We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650-800 deg. C. This is achieved by incorporating a layer of epitaxially grown Si{sub 1-y}C {sub y} layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 x 10{sup 14} cm{sup -2} was performed followed by annealing at temperature ranges of 650-800 deg. C. Samples with the Si{sub 1-y}C {sub y} layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime.

2006-05-10

374

Clinical and tomographic aspects of macular microholes; Aspectos clinicos e tomograficos dos microburacos maculares  

Energy Technology Data Exchange (ETDEWEB)

Purpose: To describe the clinical aspects and evaluate optical coherence tomography of macular microholes. Methods: Seven patients were assessed (8 eyes) with microholes of the macula. All patients underwent complete eye examination, fundus photography, fluorescent angiography and OCT-3 imaging. Results: Ages ranged from 26 to 69 years. Six patients were female (85.7%) and five of them had microhole in the right eye. The presenting symptom was decrease in visual acuity (71.3%) and central scotoma in (14.3%). Five eyes (71.4%) had no defects shown by fluorescent angiography. A defect in the outer retina was demonstrated in all eyes on optical coherence tomography. The lesions were nonprogressive. Conclusion: Macular microholes are small lamellar defects in the outer retina. The condition is nonprogressive, generally unilateral and compatible with good visual acuity. Fundus biomicroscopy associated with an optical coherence ...

2009-07-01

375

Causes of poor sealant performance in soil-gas-resistant foundations  

International Nuclear Information System (INIS)

Sealants for radon-resistant foundation construction must seal the gap between concrete sections. Modern sealants have such low permeability that seal performance depends only on the permeability of the material that contacts the sealant. The surface permeability of concrete walls and floors was measured by a specially designed permeameter, which measures the airflow induced by a pressure difference across a temporary test seal applied to the surface. The permeability of bulk concrete is about 10"-"1"5 m"2. Areas free of surface defects had surface permeability ranging from 10"-"1"4 to 10"-"1"6 m"2. However, surface defects are common on concrete wall surfaces, which increase the permeability to >10"-"1"2 m"2, too high for standard seal designs to be adequate as the only method of soil gas and radon exclusion. Radon-resistant seals require either extended contact widths or mechanical removal of the surface layer and ...

376

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena  

Energy Technology Data Exchange (ETDEWEB)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. ...

1996-01-01

377

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena  

International Nuclear Information System (INIS)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5x10"1"3 cm"-"2 Si into (001)Si, followed by a high temperature (815 degree C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the open-quote open-quote+1 close-quote close-quote model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. copyright 1996 American Institute ...

378

A transient enhanced diffusion model of lattice restoration during rapid thermal annealing (RTA)  

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of As-implanted Si. The relations of the enhanced diffusion to residual defects and lattice restoration have been studied in detail. The As concentration profiles and residual defects are measured. It is found from the data that the lattice has been restored when the implanted sample is annealed at 1150 deg C (or 1050 deg C) for 1s. The defect density decreases rapidly with increase of annealing time (from 1 to 12s). The enhanced diffusion coefficient maximum appears in the annealing time ranging from 1 to 5s. Allmost a 'complete' annealing of displacemet damage is obtained and the diffusion coefficient is less than that in above-mentioned conditions when the implanted samples are annealed at 1150 deg C in the time ranging from 12 to 20s. the mechanism of lattice restoration and enhanced diffusion in annealing process have been ...

379

A study of the effects of scattered radiation on radiographic quality and methods of elimination of such radiation  

International Nuclear Information System (INIS)

Many mechanical parts are subjected to stresses and strains that may eventually lead to their failure. In order to prevent the costly delays associated with equipment down-time, many parts have to be tested for weaknesses and defects when machinery is constructed or dismantled for maintenance. These procedures are known as Non-Destructive Testing (NDT) methods. Five types of non-destructive testing methods routinely used are radiographic testing, ultrasonic testing, magnetic particle inspection, liquid penetrant testing and eddy current testing. Out of these five techniques industrial radiography plays an important role in non-destructive testing to reveal interior defects in materials. In radiography almost two-thirds of the radiation reaching the film is scattered radiation which does not form the image of defects. Scattered radiation generated inside and outside a material has a very large effect on sensitivity of flaw ...

1998-02-01

380

Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate  

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

2008-05-19

381

Using robots for industrial processes on coal mine surfaces  

Energy Technology Data Exchange (ETDEWEB)

How to decide which mine surface tasks may be performed by industrial robots to improve productivity and working conditions is described. Charts are presented of the industrial tasks performed on the surface and how each task may be classified as light, average, difficult or very diffcult according to a defect criteria is explained (defective operations are those which involve, heavy, harmful, stressful or dangerous jobs). The results of these calculations are used to identify which operations are suitable for first introduction of robots since traditional automation methods cannot be used, e.g. various storage, loading and packaging tasks, coal selection, sorting and removal of foreign matter, provision of services such as food preparation, cleaning, etc. Robots may also be used to control automated operations that are monotonous and hazardous for human operators. It is envisaged that in the future computer programmed robots with artificial ...

1987-01-01

382

Transient enhanced diffusion in B/sup +/ and P/sup +/ implanted silicon  

International Nuclear Information System (INIS)

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

383

The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon  

International Nuclear Information System (INIS)

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.

2005-11-07

384

Steam generator tube performance: experience with water-cooled nuclear power reactors during 1979  

International Nuclear Information System (INIS)

The performance of steam generator tubes in water-cooled nuclear power reactors has been reviewed for 1979. Tube failures occurred at 38 of the 93 reactors surveyed. Causes of these failures and procedures designed to deal with them are described. The defect rate was twice that in 1978 but still lower than the two previous years. Methods being employed to detect defects include increasing use of multifrequency eddy-current testing and a trend to full-length inspection of all tubes. To reduce the incidence of tube failures by corrosion, plant operators are turning to full-flow condensate demineralization and more leak-resistant condenser tubes. (author).

1994-10-18

385

Real time automatic discriminating of ultrasonic flaws  

International Nuclear Information System (INIS)

This paper is concerned with the real time automatic discriminating of flaws from two categories; i. cracks (planar defect) and ii. Non-cracks (volumetric defect such as cluster porosity and slag) using pulse-echo ultrasound. The raw ultrasonic flaws signal were collected from a computerized robotic plane scanning system over the whole of each reflector as the primary source of data. The signal is then filtered and the analysis in both time and frequency domain were executed to obtain the selected feature. The real time feature analysis techniques measured the number of peaks, maximum index, pulse duration, rise time and fall time. The obtained features could be used to distinguish between quantitatively classified flaws by using various tools in artificial intelligence such as neural networks. The proposed algorithm and complete system were implemented in a computer software developed using Microsoft Visual BASIC 6.0 (author)

2009-07-20

386

Photoreceptor Inner and Outer Segment Defects in Myopic Foveoschisis  

British Library Electronic Table of Contents (United Kingdom)

PurposeTo evaluate pathologic features of the photoreceptors in myopic foveoschisis with the Fourier-domain optical coherence tomography (FD-OCT).DesignObservational case series.MethodsSeventeen eyes of 15 patients with myopic foveoschisis (foveal detachment type, six eyes; foveoschisis type, 11 eyes) were included. We observed the photoreceptor inner and outer segments (IS/OS) and evaluated the morphologic status using FD-OCT. Fundus photographs and time-domain OCT (TD-OCT) images also were obtained.ResultsIS/OS defects, which are uncommon in retinal detachments in eyes with myopia, were seen clearly in five eyes (three eyes [50%] with the foveal detachment type; two eyes [18%] with the foveal schisis type). Fundus photographs showed myopic chorioretinal atrophy in eight study eyes (47%),...

2008-01-01

387

Paraquat toxicity is increased in Escherichia coli defective in the synthesis of polyamines  

International Nuclear Information System (INIS)

The authors have shown that toxicity of paraquat for Escherichia coli is increased over 1-fold in strains defective in the biosynthesis of spermidine compared to isogenic strains containing spermidine. The increased sensitivity of these spermidine-deficient mutants to paraquat is eliminated by growth in medium containing spermidine or by endogenous supplementation of spermidine by the use of a speE"+D"+ plasmid. No paraquat toxicity is seen in the absence of oxygen, even in amine-deficient strains, indicating that superoxide is the agent responsible for the increased toxicity. However, the specific mechanisms responsible for the increased paraquat toxicity in the spermidine-deficient mutants remain to be determined. The marked sensitivity to paraquat of E. coli deficient in spermidine is of particular interest, since such mutants have no other phenotypic properties that can be easily assayed. This increased sensitivity has been used as the basis of a convenient ...

388

Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants  

International Nuclear Information System (INIS)

We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.

2005-08-01

389

Investigation of the magnetic field response from eddy current inspection of defects  

British Library Electronic Table of Contents (United Kingdom)

Eddy current testing is one of the most widely used methods in non-destructive testing for the inspection of conductive materials. Numerical modelling of eddy current testing has emerged as an important approach alongside experimental studies. This paper investigates an application of numerical modelling and experimental study as a means of the quantitative non-destructive evaluation (QNDE) of defects in conductive samples. There are two methods of measuring eddy current response, more commonly by measuring the change in impedance of the eddy current probe coil, or as used in this work, by measuring the change in magnetic field directly using magnetic field sensors such as superconducting quantum interference devices, giant magneto resistance, or as in this case Hall sensors. Specifically,...

2011-01-01

390

Endogenous expression of Hras(G12V) induces developmental defects and neoplasms with copy number imbalances of the oncogene.  

Science.gov (United States)

We developed mice with germline endogenous expression of oncogenic Hras to study effects on development and mechanisms of tumor initiation. They had high perinatal mortality, abnormal cranial dimensions, defective dental ameloblasts, and nasal septal deviation, consistent with some of the features of human Costello syndrome. These mice developed papillomas and angiosarcomas, which were associated with Hras(G12V) allelic imbalance and augmented Hras signaling. Endogenous expression of Hras(G12V) was also associated with a higher mutation rate in vivo. Tumor initiation by Hras(G12V) likely requires augmentation of signal output, which in papillomas and angiosarcomas is achieved via increased Hras-gene copy number, which may be favored by a higher mutation frequency in cells expressing the oncoprotein. PMID:19416908

2009-04-29

391

Electron-phonon based local mode descriptions of displacive transformations  

Energy Technology Data Exchange (ETDEWEB)

As a general approach to the problem of precursive behavior in alloys that undergo a displacive transformation, defect theories are becoming increasingly popular. However, the microscopic origin of the proposed defects is usually not considered. Yu and Anderson (1984) have argued that properties of strong-coupling superconductors, such as the A-15 compounds, imply a breakdown of Migdal's theorem (the adiabatic, or Born-Oppenheimer approximation for separation of electrons and phonons) in these systems. The electron-phonon coupling is so strong that it must be incorporated already in zeroth order. This is the basis for local phonon models, in which the electron-phonon coupling provides an effective double well potential for a localized group of atoms. The Yu-Anderson model and an analogous local Jahn-Teller model (Abell, 1983) are reviewed in connection with displacive transformations in strong-coupling alloys.

1986-01-01

392

Effect of decrease of molybdenum radiation hardening at high energy proton irradiation  

International Nuclear Information System (INIS)

By method of transmission electron microscopy and measuring of microhardness the peculiarities of influence of radiation defect clusters on molybdenum radiation hardening along range path of protons with 30 MeV initial energy are studied. Decrease effect of hardening growth value and even its absence depending on irradiation dose in the range of 10-20 MeV proton energies in presence of high density of radiation defect dispersed clusters is revealed. It is shown experimentally that this effect is connected with accumulation of hydrogen up to not very high concentrations (not more than 5x10"-"4 at.%) at the expense of elastic and inelastic proton scattering. 5 refs.; 5 figs.

1990-05-22

393

Eddy current probe development based on a magnetic sensor array; Developpement d'un imageur magnetique pour le controle non destructif par courants de Foucault  

Energy Technology Data Exchange (ETDEWEB)

This research deals with in the study of the use of innovating magnetic sensors in eddy current non destructive inspection. The author reports an analysis survey of magnetic sensor performances. This survey enables the selection of magnetic sensor technologies used in non destructive inspection. He presents the state-of-the-art of eddy current probes exploiting the qualities of innovating magnetic sensors, and describes the methods enabling the use of these magnetic sensors in non destructive testing. Two main applications of innovating magnetic sensors are identified: the detection of very small defects by means of magneto-resistive sensors, and the detection of deep defects by means of giant magneto-impedances. Based on the use of modelling, optimization, signal processing tools, probes are manufactured for these both applications.

2007-06-15

394

Diffusion of antimony in silicon in the presence of point defects  

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

2007-08-15

395

Diffusion of antimony in silicon in the presence of point defects  

International Nuclear Information System (INIS)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

2007-08-01

396

Causes of poor sealant performance in soil gas resistant foundations  

International Nuclear Information System (INIS)

The surface permeability of concrete walls and floors in houses was measured with a specially designed permeameter, based on measuring the air-flow induced by a pressure difference across a temporary test seal applied to a surface. The permeability of bulk concrete is 10"-"1"6 m"2. Areas free of surface defects had permeability ranging from 10"-"1"4 to 10-"1"6 m"2. However, surface defects are common on concrete wall surfaces, which increase the permeability to >10"-"1"2 m"2. This is too high for standard seal designs to be adequate as the only method of soil gas and radon exclusion. Satisfactory seals require either extended contact width or mechanical removal of the surface layer. (orig.). (2 figs., 1 tab.).

1993-07-04

397

Brown diamonds from an eclogite xenolith from Udachnaya kimberlite, Yakutia, Russia  

British Library Electronic Table of Contents (United Kingdom)

Abstract: We have performed petrographic and spectroscopic studies of brown diamonds from an eclogite xenolith from the Udachnaya pipe (Yakutia, Russia). Brown diamonds are randomly intermixed with colorless ones in the rock and often located at the grain boundaries of clinopyroxene and garnet. Brown diamonds can be characterized by a set of defects (H4, N2D and a line at 490.7nm) which are absent in colorless diamonds. This set of defects is typical for plastically deformed diamonds and indicates that diamonds were likely annealed for a relatively short period after deformation had occurred. Excitation of brown colored zones with a 632.8nm He-Ne laser produced the typical diamond band plus two additional bands at 1730cm^-^1 and 3350cm^-^1. These spectral features are not genuine Raman ban...

2011-01-01

398

Assessing the acid properties of desilicated ZSM-5 by FTIR using CO and 2,4,6-trimethylpyridine (collidine) as molecular probes  

British Library Electronic Table of Contents (United Kingdom)

A series of desilicated ZSM-5 catalysts previously shown to have improved catalytic performance in the MTG (methanol-to-gasoline) reaction [M. Bjorgen, F. Joensen, M.S. Holm, U. Olsbye, K.-P. Lillerud, S. Svelle, Appl. Catal. A 345 (2008) 43] was subjected to thorough examination using FTIR. Clearly, defects represented by internal Si-OH sites are removed upon NaOH treatment. In a parallel manner, free Si-OH sites increase in concentration and the results point to a selective mechanism for formation of mesopores as the framework dissolution preferentially takes place at defective sites in the crystallites. The acid properties of the desilicated materials were investigated by applying CO and collidine (2,4,6-trimethylpyridine) as molecular probes. Monitoring the induced frequency shifts upo...

2009-01-01

399

THE EVOLUTION OF THE STAR FORMATION RATE OF GALAXIES AT 0.0 #<=# z #<=# 1.2  

International Nuclear Information System (INIS)

We present the 24 #mu#m rest-frame luminosity function (LF) of star-forming galaxies in the redshift range 0.0 #<=# z #<=# 0.6 constructed from 4047 spectroscopic redshifts from the AGN and Galaxy Evolution Survey of 24 #mu#m selected sources in the Booetes field of the NOAO Deep Wide-Field Survey. This sample provides the best available combination of large area (9 deg"2), depth, and statistically complete spectroscopic observations, allowing us to probe the evolution of the 24 #mu#m LF of galaxies at low and intermediate redshifts while minimizing the effects of cosmic variance. In order to use the observed 24 #mu#m luminosity as a tracer for star formation, active galactic nuclei (AGNs) that could contribute significantly at 24 #mu#m are identified and excluded from our star-forming galaxy sample based on their mid-IR spectral energy distributions or the detection of X-ray emission. Optical emission line diagnostics are considered for AGN identification, but we find that 24 ...

2010-08-01

400

CFD investigation of balcony spill plumes in atria  

Energy Technology Data Exchange (ETDEWEB)

Smoke management in buildings during fire events often uses mechanical ventilation systems to maintain smoke layer elevation above a safe evacuation path. Design of these systems requires accurate correlations for the smoke production rate of the buoyant fire plume. One design issue is the smoke production rate of fire plumes which spill out from a fire compartment, under a balcony and up through an atrium or other large volume. Current engineering correlations for these balcony spill plumes are based on a combination of one-tenth scale test data and theoretical analysis. Questions have arisen over the suitability of these correlations for real-scale designs. A combined program of full-scale experimentation and CFD modeling is being conducted to analyze the accuracy of these correlations. A full-scale experimental facility was constructed with a 5 m by 5 m by 15 m fire compartment connected to a four-story atrium. Propane fires in the compartment produce balcony spill plumes which form ...

2004-07-01

401

CFD investigation of balcony spill plumes in atria  

International Nuclear Information System (INIS)

Smoke management in buildings during fire events often uses mechanical ventilation systems to maintain smoke layer elevation above a safe evacuation path. Design of these systems requires accurate correlations for the smoke production rate of the buoyant fire plume. One design issue is the smoke production rate of fire plumes which spill out from a fire compartment, under a balcony and up through an atrium or other large volume. Current engineering correlations for these balcony spill plumes are based on a combination of one-tenth scale test data and theoretical analysis. Questions have arisen over the suitability of these correlations for real-scale designs. A combined program of full-scale experimentation and CFD modeling is being conducted to analyze the accuracy of these correlations. A full-scale experimental facility was constructed with a 5 m by 5 m by 15 m fire compartment connected to a four-story atrium. Propane fires in the compartment produce balcony spill plumes which form ...

2004-05-09

402

Aging of Pentaerythritol Tetranitrate (PETN)  

Science.gov (United States)

Pentaerythritol tetranitrate (PETN) is a relatively sensitive explosive used in many electroexplosive devices as well as in medicine. Of primary interest to LLNL is its use in items such as exploding bridgewire (EBW) detonators and exploding bridge foil initiators (EFI). In these devices the crystalline powder is pressed into a granular, low-density compact that can be initiated by an exploding wire or foil. The long-term stability of this pressed compact is of interest to weapon stockpile lifetime prediction studies. Key points about potential aging mechanisms can be summarized as follows: (1) There are a number of factors that can contribute to PETN instability. These include particle size, polymorphic phase transitions, crystal structure, impurities, moisture, occlusions, chemical incompatibility and biological (microorganism) action. of these factors the most important for long-term aging of high surface area powders used in detonators appears to be that of ...

2009-04-22

403

Ligands in PSI structures  

UK PubMed Central (United Kingdom)

Approximately 65% of PSI structures report some type of ligand(s) that is bound in the crystal structure. Here, a description is given of how such ligands are handled and analyzed at the JCSG and a...Full Text Available

404

Antigenic heterogeneity of the non-serogroup antigen structure of Neisseria gonorrhoeae lipopolysaccharides.  

UK PubMed Central (United Kingdom)

Studies of the antigenic structure of the polysaccharide component of gonococcal lipopolysaccaride (LPS) indicated that the non-serogroup antigen structure is antigenically heterogeneous. Immunodiffusion...Full Text Available

1979-12-01

405

Visualization and Analysis of Eddy Current Data from D-Probe  

Energy Technology Data Exchange (ETDEWEB)

Eddy current testing (ECT) method is widely used as the non-destructive evaluation (NDE) of the various kinds of material degradation occurring in nuclear power plants (NPPs) components including steam generator (SG) tubes. Detection of any defects or flaws in the steam generator tubes in the early stage is very important in maintenance of NPP for its primary role as the pressure boundary with thin wall thickness. Although the ECT technique provides lots of information for a SG management, it has a generic problem in its reliability due to a low ability in detect of small defects and some difficulty in a signal analysis. For the improvement of these shortcomings in conventional ECT, profile-MRPC (motorized rotating pancake coil) ECT technology was developed in KAERI. The key of this new technology is the development of new eddy current probes, designated as a diagnostic probe (D-probe). The D-probe is furnished with a simultaneous dual function ...

2009-05-15

406

Visualization and Analysis of Eddy Current Data from D-Probe  

International Nuclear Information System (INIS)

Eddy current testing (ECT) method is widely used as the non-destructive evaluation (NDE) of the various kinds of material degradation occurring in nuclear power plants (NPPs) components including steam generator (SG) tubes. Detection of any defects or flaws in the steam generator tubes in the early stage is very important in maintenance of NPP for its primary role as the pressure boundary with thin wall thickness. Although the ECT technique provides lots of information for a SG management, it has a generic problem in its reliability due to a low ability in detect of small defects and some difficulty in a signal analysis. For the improvement of these shortcomings in conventional ECT, profile-MRPC (motorized rotating pancake coil) ECT technology was developed in KAERI. The key of this new technology is the development of new eddy current probes, designated as a diagnostic probe (D-probe). The D-probe is furnished with a simultaneous dual function ...

2009-05-01

407

Transient enhanced diffusion and deactivation of ion-implanted As in strained Si  

International Nuclear Information System (INIS)

First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.

2005-08-01

408

Topological excitations and second order transitions in 3D O(N) models  

Energy Technology Data Exchange (ETDEWEB)

I discuss several examples of critical phenomena in O(N) models where topological excitations play an important role at criticality. I focus particular attention on the O(2) model in 3D, where recent measurements of the vortex string length distribution in equilibrium suggest the existence of a quantitative picture of the critical behavior in terms of defects. The compatibility of this perspective with renormalization group predictions is examined.

2001-01-01

409

The safety concept of public gas supply in Germany  

Energy Technology Data Exchange (ETDEWEB)

The risk perception of the public consists of two components: the objectively factual component and the subjectively irrational component. The two strategies adopted by the German gas supply industry are the internal and the external communication strategy. Concepts and measures of accident precaution, registration and analysis of accident data (installation and operating errors, defects on flue systems, pipelines and valves, subsequent installation of gas appliances) are discussed. (R.P.)

1997-09-01

410

The recovery of zinc and cadmium following 6.1 MeV alpha particle irradiation at 4.2 K  

International Nuclear Information System (INIS)

The paper reports the recovery of zinc and cadmium following 6.1 MeV alpha particle irradiation at 4.2 K as studied by means of electrical reistivity measurements. Specimens of 10 #mu#m thick have been used in order to obtain a homogeneous defect distribution over the whole thickness of the specimen. The pre-irradiation resistivity ratios were 700 and 750 for cadmium and zinc, respectively. (Auth.).

411

The mutT Defect Does Not Elevate Chromosomal Fragmentation in Escherichia coli Because of the Surprisingly Low Levels of MutM/MutY-Recognized DNA Modifications?  

UK PubMed Central (United Kingdom)

Nucleotide pool sanitizing enzymes Dut (dUTPase), RdgB (dITPase), and MutT (8-oxo-dGTPase) of Escherichia coli hydrolyze noncanonical DNA precursors to prevent incorporation of base...Full Text Available

2007-10-01

412

The Application of Spatial Signature Analysis to Electrical Test Data: Validation Study  

Energy Technology Data Exchange (ETDEWEB)

This paper presents the results of the Spatial Signature Analysis (SSA) Electrical-test (e-test) validation study that was conducted between February and June, 1998. SSA is an automated procedure developed by researchers at the Oak Ridge National Laboratory to address the issue of intelligent data reduction while providing feedback on current manufacturing processes. SSA was initially developed to automate the analysis of optical defect data. Optical defects can form groups, or clusters, which may have a distinct shape. These patterns can reveal information about the manufacturing process. Optical defect SSA uses image processing algorithms and a classifier system to interpret and identify these patterns, or signatures. SSA has been extended to analyze and interpret electrical test data. The algorithms used for optical defect SSA have been adapted and applied to e-test binmaps. An image of the binmap is ...

1999-03-15

413

Spin-1/2 equations with tachyons and complex energies in small external fields  

International Nuclear Information System (INIS)

One normally identifies the prediction of tachyons with a higher spin problem. We show that the same phenomenon also happens with certain spin-1/2 equations, in exactly the same circumstances. Furthermore, we prove that these equations also have the defect of possessing solutions with complex energies, even with the smallest external fields. The consequences of these results are analyzed.

414

Simulation of arsenic diffusion during rapid thermal annealing of silicon layers doped with low-energy high-dose ion implantation  

International Nuclear Information System (INIS)

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

2005-09-01

415

Sensitivity of Ru(bpy)2dppz2+ Luminescence to DNA Defects  

UK PubMed Central (United Kingdom)

The luminescent characteristics of Ru(bpy)2dppz2+ (dppz = dipyrido[3,2-a:2′,3′-c]phenazine), a DNA light switch, were...Full Text Available

2009-06-15

416

Researches on gear fault diagnostic techniques  

Science.gov (United States)

Attention is given to recent research on gear fault diagnostic techniques. A mathematic model for vibration signals of defective gears is presented. Novel methods of gear fault diagnosis, such as zoom complex envelope analysis, wideband demodulation techniques, bispectrum analysis, correlation spectrum analysis, and maximum entropy spectrum analysis, are demonstrated. The wide-band demodulation technique is found to exhibit a high SNR. Bispectrum and correlation spectrum are excellent for some mechanical fault forms.

1992-10-01

417

Quantitative transfer of the molybdenum cofactor from xanthine oxidase and from sulphite oxidase to the deficient enzyme of the nit-1 mutant of Neurospora crassa to yield active nitrate reductase.  

UK PubMed Central (United Kingdom)

An assay method is described for measurement of absolute concentrations of the molybdenum cofactor, based on complementation of the defective nitrate reductase ('apo nitrate reductase') in extracts...Full Text Available

1984-04-15

418

Physical Properties of Liquid Crystals  

CERN Document Server

This handbook is a unique compendium of knowledge on all aspects of the physics of liquid crystals. In over 500 pages it provides detailed information on the physical properties of liquid crystals as well as the recent theories and results on phase transitions, defects and textures of different types of liquid crystals. An in-depth understanding of the physical fundamentals is a prerequisite for everyone working in the field of liquid crystal research. With this book the experts as well as graduate students entering the field get all the information they need.

1999-01-01

419

PET and MR imaging in a neuro-Behcet syndrome  

Energy Technology Data Exchange (ETDEWEB)

Positron emission tomography (PET) and magnetic resonance imaging (MRI) studies were performed on a case of neuro-Behcet's syndrome. In accordance with the clinical signs, FDG PET (using /sup 18/F-labeled 2-F-2'-desoxyglucose) revealed disseminated storage defects in the cerebrum and cerebellum. Focal regions of enhanced signal intensity were demonstrated in the parietal white matter of the cerebrum in T2-weighted images and in the brain stem by MRI. (orig.).

1989-11-01

420

On the theory of transient enhanced diffusion in boron-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

1991-01-01

421

On the theory of transient enhanced diffusion in boron-implanted silicon  

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

422

Observations of time delayed all-optical routing in a slow light regime  

CERN Document Server

We report an observation of a delayed all-optical routing/switching phenomenon based on ultraslow group velocity of light via nondegenerate four-wave mixing processes in a defected solid medium. Unlike previous demonstrations of enhanced four-wave mixing processes using the slow light effects, the present observation demonstrates a direct retrieval of the resonant Raman-pulse excited spin coherence into photon coherence through coherence conversion processes.

2008-01-01

423

Molecular cloning of the N-terminus of GTBP  

Energy Technology Data Exchange (ETDEWEB)

Defects in mismatch repair genes cause the genetic instability characteristic of hereditary nonpolyposis colorectal cancer and a subset of sporadic colon tumors. The newest member of the mismatch repair gene family, GTBP, has recently been identified as a partial cDNA. Here, we describe the isolation of its 5{prime} terminus, allowing definition of the entire coding region. Several polymorphisms within the 5{prime} end were identified and are presented. 13 refs., 1 fig.

1996-02-01

424

Modeling of the kinetics of dislocation loops  

Energy Technology Data Exchange (ETDEWEB)

The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.

1999-01-01

425

Klippel-feil syndrome with situs inversus. A rare association  

International Nuclear Information System (INIS)

Klippel-Feil Syndrome (KFS) is a congenital anomaly characterized by a defect in the formation or segmentation of the cervical vertebrae. The clinical triad consists of short neck, low posterior hairline and limited neck movement. Multiple congenital anomalies have been associated with this disease. This is a case of KFS in a young girl along with situs inversus, which is an extremely rare association. Various systemic associations occurring in this multi-system disorder are also discussed. (author)

2008-04-01

426

Instantaneous energy density as a feature for gear fault detection  

Science.gov (United States)

In this work, energy-based features for gear fault diagnosis and prediction are proposed. The instantaneous energy density is shown to obtain high values when defected teeth are engaged. Three methods are compared in terms of sensitivity, reliability and computation effectiveness. The Wigner Ville distribution is contrasted to the wavelet transform and the newly proposed empirical mode decomposition scheme. It is shown that all three methods are capable of a reliable prediction. An empirical law, which relates the energy content to the crack magnitude is established.

2006-07-01

427

Inbred Strain-Specific Effects of Exercise in Wild Type and Biglycan Deficient Mice  

UK PubMed Central (United Kingdom)

Biglycan (bgn)-deficient mice (KO) have defective osteoblasts which lead to changes in the amount and quality of bone. Altered tissue strength in C57BL6/129 (B6;129) KO mice, a property which...Full Text Available

2010-04-01

428

How to decorate FIB cross sections using plasma etch for SEM observation  

Energy Technology Data Exchange (ETDEWEB)

The Focused-Ion-Beam (FIB) is a powerful tool for fast, precision cross-sectioning and inspection of submicron defects in multilayered integrated circuit devices. However, the low contrast between the layers in FIB cross-sections can make the feature of interest difficult to observe, which has become a limitation for FIB cross-sectioning. A technique using plasma etch to decorate the FIB cross-sections has proven to be a simple solution to overcome this limitation.

1995-12-31

429

Hepatitis B virus-induced defect of monocyte-derived dendritic cells leads to impaired T helper type 1 response in vitro: mechanisms for viral immune escape  

UK PubMed Central (United Kingdom)

Dendritic cells (DC) are the most potent antigen-presenting cells and play a central role in the induction of antiviral immune responses. Recently, we have shown that monocyte-derived DC (MoDC) from...Full Text Available

2003-08-01

430

Focused ion beam repair: staining of photomasks and reticles  

Energy Technology Data Exchange (ETDEWEB)

Focused ion beam (FIB) repair of chromium defects on photomasks and reticles leaves a post repair stain in the quartz substrate. The wavelength dependent absorption properties of typical stained regions have been measured, showing transition losses up to 80% in the deep uv. A simple model is in good qualitative agreement with the experimental results. (author).

1993-07-14

431

Failure of stainless steel blade fixing band in a steam turbine  

Energy Technology Data Exchange (ETDEWEB)

A case study is presented about the failure of a stainless steel blade reinforcing band in a steam turbine. The inspection results and analysis of samples of material are discussed. Being pitting corrosion and cracks the main defects found, a study of chemical composition and heat treatment state of the steel is made and findings are related to type of failure. (orig.)

1997-05-01

432

Deep level transient spectroscopy characterization of defects introduced in n-GaAs after alpha irradiation at 15 K  

Energy Technology Data Exchange (ETDEWEB)

Using conventional deep level transient spectroscopy (DLTS), we have characterized the defects introduced in OMVPE n-GaAs at 15 K by 5.4 MeV alpha particle irradiation from an americium 241 radio-nuclide. After this low temperature irradiation two new defects not yet reported for alpha irradiated GaAs before, E[alpha]7 and E[alpha]9, were detected 0.07 eV and 0.19 eV below the conduction band, respectively. The introduction rates of E[alpha]7 and E[alpha]9 are calculated to be 41 cm[sup -1] and 187 cm[sup -1] respectively. It was observed that both defects obeyed first order annealing kinetics, with E[alpha]9 being removed at 225 K and E[alpha]7 at 245 K corresponding to the well known stage I annealing region. The annealing rate of E[alpha]7 corresponds to an activation energy of 0.86 eV, with a pre-exponential factor of 1.0 x 10[sup 15]s[sup -1]; and the removal of E[alpha]9 has an activation energy of 0.88 eV and a ...

1993-08-01

433

Comparative effects of scaffold pore size, pore volume, and total void volume on cranial bone healing patterns using microsphere-based scaffolds  

UK PubMed Central (United Kingdom)

Bony craniofacial deficits resulting from injury, disease, or birth defects remain a considerable clinical challenge. In this study, microsphere-based scaffold fabrication methods were use to...Full Text Available

2009-06-01

434

Chimeric Matrix Proteins Encoded by Defective Proviruses with Large Internal Deletions in Human T-Cell Leukemia Virus Type 1-Infected Humans  

UK PubMed Central (United Kingdom)

Human T-cell leukemia virus type 1 (HTLV-1) is the etiologic agent of adult T-cell leukemia/lymphoma (ATLL), HTLV-1-associated myelopathy/tropical spastic paraparesis (HAM/TSP), and other diseases....Full Text Available

2000-05-01

435

Characterization of eddy current probes used in steam generator tubes inspection  

International Nuclear Information System (INIS)

In in-service inspection of steam-generator tubes, the need for reproducibility of the measurement results and for comparison of these results over two successive inspections has led EDF to specify the main characteristics of the eddy-current probes and to design equipment to measure them. This equipment is presented here and the electrical and magnetic results are correlated with those obtained by testing tubes with reference defects.

1985-02-01

436

Characterization of Eddy Current probes used in steam generator tubes inspection  

International Nuclear Information System (INIS)

In in-service inspection of steam-generator tubes, the need for reproducibility of the measurement results and for comparison of these results over two successive inspections has led EDF to specify the main characteristics of the Eddy-Current probes and to design equipment to measure them. This equipment is presented here and the electrical and magnetic results are correlated with those obtained by testing tubes with reference defects. 5 refs.

1985-02-01

437

An in vitro assessment of cellular and humoral immune function in pulmonary tuberculosis: correction of defective neutrophil motility by ascorbate, levamisole, metoprolol and propranolol.  

UK PubMed Central (United Kingdom)

Fifty-six tuberculosis patients and twenty-eight control subjects were evaluated in a comprehensive investigation of cellular and humoral immune function in pulmonary TB. The patient group showed significantly...Full Text Available

1980-05-01

438

Abnormalities of polymorphonuclear leukocyte function associated with a heritable deficiency of high molecular weight surface glycoproteins (GP138): common relationship to diminished cell adherence.  

UK PubMed Central (United Kingdom)

Investigations of polymorphonuclear leukocyte (PMN) function were performed in a 5-yr-old white female with delayed umbilical cord separation, impaired pus formation, and a severe defect of PMN chemotaxis....Full Text Available

1984-08-01

439

A Genetic Screen for Ribosomal DNA Silencing Defects Identifies Multiple DNA Replication and Chromatin-Modulating Factors  

UK PubMed Central (United Kingdom)

Transcriptional silencing in Saccharomyces cerevisiae occurs at several genetic loci, including the ribosomal DNA (rDNA). Silencing at telomeres (telomere position effect [TPE])...Full Text Available

1999-04-01

440

#alpha#-particle irradiation damage and stage I recovery in zinc  

International Nuclear Information System (INIS)

Defects are produced in zinc by 6.1 MeV #alpha#-particle irradiation at 4.2 K and the subsequent recovery between 4.2 and 22 K. No evidence is found for free migration of an interstitial in the temperature range investigated. The recovery spectra reveal a series of substages which are ascribed to recombination of close Frenkel pairs. (author).

449

Structure of Irradiated Materials  

International Science & Technology Center (ISTC)

Fundamental Research of Materials Structure and Properties Changes Resulted from Irradiation by Means of Complex of Modern Physical Methods

450

STRUCTURE OF LIQUID NITROGEN,  

Science.gov (United States)

... Accession Number : AD0618975. Title : STRUCTURE OF LIQUID NITROGEN,. Corporate Author : CALIFORNIA INST OF TECH PASADENA. ...

1962-03-27

451

Nuclear structure physics at high resolution  

Energy Technology Data Exchange (ETDEWEB)

Techniques for studying nuclear structure are reviewed. Examples are given of charge density determinations by electron and proton inelastic scattering. (AIP)

1985-04-01

454

Feynman diagrams and polylogarithms: shuffles and pentagons  

Energy Technology Data Exchange (ETDEWEB)

We summarize the Hopf algebra structure on Feynman diagrams and emphasize the interest in further algebraic structures hidden in Feynman graphs.

2000-10-01

455

Challenges of Aircraft Design Integration  

Science.gov (United States)

... The program generates conceptual layouts of wing structural components and creates a beam finite element model of the wing structure (Figure 6 ...

2003-03-01

456

Index structures for structured documents  

Energy Technology Data Exchange (ETDEWEB)

Much research has been carried out in order to manage structured documents such as SGML documents and to provide powerful query facilities which exploit document structures as well as document contents. In order to perform structure queries efficiently in a structured document management system, an index structure which supports fast document element access must be provided. However, there has been little research on the index structures for structured documents. In this paper, we propose various kinds of new inverted indexing schemes and signature file schemes for efficient structure query processing. We evaluate the storage requirements and disk access time of our schemes and present the analytical and experimental results.

1996-12-31

457

Study on reactor building structure using ultrahigh strength materials - Part 7: Outline of mixed structure tests  

International Nuclear Information System (INIS)

The objective of this study is to comprehend the basic structural characteristics of box shaped mixed structures proposed for a future nuclear reactor building structure. Specimens of reinforced concrete precast panel walls of the mixed structures were prepared using ultrahigh strength materials. Two bending shear tests were conducted with a parameter of the quantity of reinforcement bars. The results include: (1) Relationship of shear stress and the angle of the structure, and (2) Failure mode. (author)

1993-08-15

458

Usefulness of myocardial imaging by [sup 123]I-MIBG in assessment of diabetic neuropathy  

Energy Technology Data Exchange (ETDEWEB)

In diabetic patients with autonomic neuropathy, it is suggested that there is a reduced uptake of [sup 123]I-metaiodobenzylguanidine (MIBG) in the heart. We compared the difference of myocardial [sup 123]I-MIBG accumulation between 4 diabetic patients with triopathy and 6 patients without it. In all 10 patients, coronary angiography and [sup 201]Tl imaging (rest and 4 hours later) were performed. [sup 123]I-MIBG (111 MBq) was administered intravenously and its imaging was recorded on 15 minutes and 4 hours after injection. In all 4 cases with triopathy, [sup 123]I-MIBG imaging showed defect in apical and inferior region. In 2 out of 6 cases without triopathy, rapid clearance was noticed in apical and inferior region. There was no significant stenosis in right coronary artery and no defect in initial and delayed [sup 201]Tl images in all cases. We concluded that diabetic autonomic neuropathy in the heart was prominent in apical and inferior ...

1993-10-01

459

Transient enhanced diffusion of Sb and B due to MeV silicon implants  

Energy Technology Data Exchange (ETDEWEB)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We ...

1997-06-01

460

Transient enhanced diffusion of Sb and B due to MeV silicon implants  

International Nuclear Information System (INIS)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We discuss possible ...

461

Transient enhanced diffusion in preamorphized silicon: the role of the surface  

Energy Technology Data Exchange (ETDEWEB)

Experiments on the depth dependence of transient enhanced diffusion (TED) of boron during rapid thermal annealing of Ge-preamorphized layers reveal a linear decrease in the diffusion enhancement between the end-of-range (EOR) defect band and the surface. This behavior, which indicates a quasi-steady-state distribution of excess interstitials, emitted from the EOR band and absorbed at the surface, is observed for annealing times as short as 1 s at 900 deg. C. Using an etching procedure we vary the distance x{sub EOR} from the EOR band to the surface in the range 80-175 nm, and observe how this influences the interstitial supersaturation, s(x). The supersaturations at the EOR band and the surface remain unchanged, while the gradient ds/dx, and thus the flux to the surface, varies inversely with x{sub EOR}. This confirms the validity of earlier modelling of EOR defect evolution in terms of Ostwald ripening, and provides conclusive evidence that ...

1999-01-02

462

Transient enhanced diffusion in preamorphized silicon: the role of the surface  

International Nuclear Information System (INIS)

Experiments on the depth dependence of transient enhanced diffusion (TED) of boron during rapid thermal annealing of Ge-preamorphized layers reveal a linear decrease in the diffusion enhancement between the end-of-range (EOR) defect band and the surface. This behavior, which indicates a quasi-steady-state distribution of excess interstitials, emitted from the EOR band and absorbed at the surface, is observed for annealing times as short as 1 s at 900 deg. C. Using an etching procedure we vary the distance x_E_O_R from the EOR band to the surface in the range 80-175 nm, and observe how this influences the interstitial supersaturation, s(x). The supersaturations at the EOR band and the surface remain unchanged, while the gradient ds/dx, and thus the flux to the surface, varies inversely with x_E_O_R. This confirms the validity of earlier modelling of EOR defect evolution in terms of Ostwald ripening, and provides conclusive evidence that the ...

1999-01-02

463

Transient enhanced diffusion in ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant concentration which can be incorporated in the ...

1987-03-01

464

Tissue-engineered product: allogeneic cultured dermal substitute composed of spongy collagen with fibroblasts.  

Science.gov (United States)

Recently, various types of allogeneic skin substitutes including cultured epidermal substitute (CES), cultured dermal substitute (CDS), and cultured skin substitute (CSS), which are composed of keratinocytes and/or fibroblasts as the cellular component(s), have been used as biological wound dressings. In our study, the allogeneic CDS was prepared by plating fibroblasts on a spongy collagen. The clinical evaluation was conducted using fresh or cryopreserved allogeneic CDS. In 145 of our clinical cases, 95% (138/145) of various wounds were evaluated as achieving good or excellent results, including 96% (22/23) of deep dermal burns (DDB) and dermal burns (DB), 100% (53/53) of partial-thickness donor wounds, 91% (21/23) of traumatic skin defects, 100% (5/5) of pressure ulcers, 82% (9/11) of chronic skin ulcers, 100% (6/6) of coverage for debrided DB, and 92% (22/24) of coverage for autologous meshed graft. The results obtained in our study suggest that the allogeneic ...

2001-03-01

465

The interstitial fraction of diffusivity of common dopants in Si  

Energy Technology Data Exchange (ETDEWEB)

The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f{sub A}. Accurate knowledge of f{sub A} is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f{sub A} is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f{sub A} without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f{sub Sb}{le}0.012 and f{sub B}{ge}0.98 at temperatures of {approximately}800{degree}C, which are the strictest bounds reported to date. Our results are in agreement with a ...

1997-12-01

466

The interstitial fraction of diffusivity of common dopants in Si  

International Nuclear Information System (INIS)

The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f_A. Accurate knowledge of f_A is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f_A is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f_A without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f_S_b#<=#0.012 and f_B#>=#0.98 at temperatures of #approx#800 degree C, which are the strictest bounds reported to date. Our results are in agreement with a theoretical expectation that a ...

467

The forming process of magnesium alloy for Japanese home electric components  

Energy Technology Data Exchange (ETDEWEB)

Magnesium alloys have replaced resins as a material for the components of electronic products such as cell phone and notebook personal computer mainly, because of their lightness and rigidity. Thin walls, a complicated shape, and high appearance quality are all needed in the external parts. Die-casting and injection molding are the main method of manufacturing magnesium alloy parts. The optimal cast conditions and mold design have been investigated in order that a few defects such as surface cracks and mold cavities in casting parts would be reduced. Instead of cast, plastic forming technologies such as warm drawing and hot forging have been developed to form thinner walls and less defects. Plastic formability of magnesium alloy in hot working is dependent on a grain size of material. The material with fine grains has advantage of being formed at high strain rate. The characteristics of forming processes of magnesium parts for Japanese home ...

2005-07-01

468

The accuracy and reverse effects of thallium myocardial SPECT using adenosine triphosphate loading in the diagnosis of coronary artery disease. Comparison with other loading methods semiquantitatively  

Energy Technology Data Exchange (ETDEWEB)

The adverse effects and diagnostic accuracy of thallium-201 myocardial SPECT after intravenous infusion of adenosine triphosphate (ATP) were studied and compared with SPECT examinations with other type of loading. The subjects of the study were 147 patients with or without coronary artery disease, who underwent some type of loading SPECT and coronary arteriography (CAG) within 30 days. Myocardial ischemia was evaluated qualitatively in SPECT and was compared with CAG for the diagnostic accuracy of coronary artery disease. The degree of myocardial uptake defect was also calculated semiquantitatively using visual scoring method and compared with coronary artery severity score. The adverse effects occurred in 46.7% of ATP loading SPECT which was more frequent that DIP loading SPECT, but all of them were transient and mild. As for the diagnostic ability the ATP loading SPECT was as effective as other type of loading in qualitative interpretation, and the perfusion ...

1999-09-01

469

Some computer simulations of semiconductor thin film growth and strain relaxation in a unified atomistic and kinetic model  

Energy Technology Data Exchange (ETDEWEB)

An overview is provided of an evolving atomistic and kinetic model of semiconductor growth that unifies the main features of strain relaxation in low and high lattice misfit heteroepitaxy. The model reveals a kinetic pathway for dislocation formation during growth with little or no energy cost at low misfits, thus providing a way out of the longstanding dilemma of too high dislocation nucleation energies predicted by classical theories of the equilibrium behavior of a fixed number of particles at low misfits. The essential kinetic process underlying the model are identified on the basis of comparison of the predictions of kinetic Monte-Carlo simulations of growth with real-time or in-situ data obtained in such experiments as reflection high-energy electron diffraction (RHEED) and scanning probe microscopy (SPM). Relative significance of these atomistic kinetic processes is shown to naturally lead to strain relaxation via defect initiation at low misfits while ...

1996-12-31

470

Research and development on probe inserting method into steam generator helically coiled tubes for in-service inspection  

International Nuclear Information System (INIS)

Helically coiled tubes of steam generators (SG) in FBR are boundaries between sodium and water/steam. Therefore, to assure the integrity of tubes, it is necessary to inspect the tubes nondestructively for in service or after a sodium-water reaction accident. In order to make it possible to conduct in-service inspection of SG tubes, we have studied on eddy current probes and probe inserting methods. As for the probe inserting method, IHI designed a fluid driving type which consists of a model probe and signal cable with float balls and driven by air pressure force. Presented in this paper is the authors' report, which describes the fluid driving type as an effective method to insert an eddy current probe into helically coiled tubes. The outline of the test results is as follows: 1. It was possible to insert the probe into 65 meter length helically coiled tubes. 2. We could detected, as anticipated, a defect (outer circumferential wall thinning ...

1979-01-01

471

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation  

Energy Technology Data Exchange (ETDEWEB)

Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like the crystal-amorphous transition ...

2004-12-15

472

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation  

International Nuclear Information System (INIS)

Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like the crystal-amorphous transition temperature and ...

2004-12-15

473

Passivation of Cu by sputter-deposited Ta and reactively sputter-deposited Ta-nitride layers  

Energy Technology Data Exchange (ETDEWEB)

Sputter-deposited tantalum (Ta) and reactively sputter-deposited Ta-nitride films were studied with respect to the passivation capability against copper (Cu) oxidation in thermal O{sub 2} ambient. A 200 {angstrom} Ta or Ta-nitride film was sputter-deposited on a 2,000 {angstrom} Cu film using a Ta target in an Ar/N{sub 2} gas mixture. With Ta passivation, Cu was not oxidized at temperatures up to 400 C, which can be further improved by using passivation of an amorphous Ta-nitride film deposited in an appropriate condition. The absence of long-range defects in the Ta-nitride film was presumably responsible for this improvement. However, sputtering-induced surface damage by excess N{sub 2} in the sputter gas mixture may reduce the passivation capability of Ta-nitride films. When the passivated Cu was oxidized, the Cu oxides always resided in the top surface region. That is, in the oxidation process, Cu diffused through the defects of the ...

1998-09-01

474

Neutron irradiation of superconducting compounds  

International Nuclear Information System (INIS)

The effects of neutron irradiation on the superconducting and normal state properties of alloys and compounds are presented. Particular emphasis is placed on the A-15 compounds where the effects of neutron irradiation on Tsub(c), Hsub(c_2), long range order parameter and lattice parameter are described. Large depressions (up to 80%) in Tsub(c) are observed for all the A-15 compounds studied with the exception of Mo_3Os where much smaller decreases in Tsub(c) are seen. Along with the decrease in Tsub(c) and increase in lattice parameter, the degree of long range order, as measured by X-ray and neutron diffraction, decreases. Also presented are the results of isothermal and isochronal anneals up to 900"0C. The unirradiated value of Tsub(c) can be restored by annealing, and for those systems where measurements have been made, recovery of the lattice parameter and order parameter also takes place. The effects observed in irradiated material, together with those observed in unirradiated but ...

475

Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation  

Energy Technology Data Exchange (ETDEWEB)

Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si{sub 1-x-y}Ge{sub x}C{sub y} during 750{sup o}C inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes {l_brace}311{r_brace} defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C{sub i}C{sub s}) pairing reaction that successfully simulates carbon suppression ...

2001-08-15

476

Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation  

International Nuclear Information System (INIS)

Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si_1_-_x_-_yGe_xC_y during 750"oC inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes #left brace#311#right brace# defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C_iC_s) pairing reaction that successfully simulates carbon suppression of boron TED at ...

2001-08-15

477

Methods for preventing steam generator failure or degradation  

Energy Technology Data Exchange (ETDEWEB)

PWR steam generators have suffered from a variety of degradation phenomena. This paper identifies the corrosion-related defects and their probable causes and suggests approaches to correct and prevent corrosive activity. In the attempt to solve the degradation problems, research programs have concentrated on modifying materials, stresses, and the chemical environment in both new and operating steam generators. The following corrosion-related defects have been studied: tube wastage, denting, primary side (ID) intergranular stress corrosion cracking (IGSCC), OD-initiated intergranular attack (IGA), pitting, and corrosion fatigue. Plants affected by wastage have greatly reduced their problem by adopting an all volatile treatment (AVT). In the case of denting, a less aggressive chemical environment is recommended. Primary side IGSCC responds to temperature reduction, stress relief, and material improvements, while flushing and boric acid addition ...

1986-01-01

478

Methods for preventing steam generator failure or degradation  

International Nuclear Information System (INIS)

PWR steam generators have suffered from a variety of degradation phenomena. This paper identifies the corrosion-related defects and their probable causes and suggests approaches to correct and prevent corrosive activity. In the attempt to solve the degradation problems, research programs have concentrated on modifying materials, stresses, and the chemical environment in both new and operating steam generators. The following corrosion-related defects have been studied: tube wastage, denting, primary side (ID) intergranular stress corrosion cracking (IGSCC), OD-initiated intergranular attack (IGA), pitting, and corrosion fatigue. Plants affected by wastage have greatly reduced their problem by adopting an all volatile treatment (AVT). In the case of denting, a less aggressive chemical environment is recommended. Primary side IGSCC responds to temperature reduction, stress relief, and material improvements, while flushing and boric acid addition ...

479

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials  

Energy Technology Data Exchange (ETDEWEB)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation loop were observed from ...

2004-11-15

480

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials  

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and dislocation loop were observed from the ...

2004-11-01

481

Inspection of PFR steam generators  

International Nuclear Information System (INIS)

The inspection of PFR evaporator tubing, superheater and reheater tubing, and tube plate examinations, are described. Ferritic steel U tubes in the evaporator have been examined by an eddy current system operating at 400 kHz using flexible rotating probes. Surface defects as shallow as 0.1 mm can be detected and sized in the range 0.1 to 0.5 mm deep. An ultrasonic method is under development for wall thickness. Special test coil probes have been developed for examination of the type 316 stainless steel superheater and reheater tubing. Crack-life defects in the bore are detectable at approximately 10% wall thickness and 20% on the outside diameter. Tube plate examinations from the tube holes, have been conducted using eddy current probes which identify surface breaking cracks in the holes. For detecting curtain cracks between tube plate holes, ultrasonic compression wave probes have been used. (U.K.).

1976-03-09

482

Improved eddy-current inspection for steam generator tubing  

Energy Technology Data Exchange (ETDEWEB)

Computer programs have been written to allow the analysis of different types of eddy-current probes and their performance under different steam generator test conditions. The probe types include the differential bobbin probe, the absolute bobbin probe, the pancake probe and the reflection probe. The generator test conditions include tube supports, copper deposits, magnetite deposits, denting, wastage, pitting, cracking and IGA. These studies are based mostly on computed values, with the limited number of test specimens available used to verify the computed results. The instrument readings were computed for a complete matrix of the different test conditions, and then the test conditions determined as a function of the readings by a least-squares technique. A comparison was made of the errors in fit and instrument drift for the different probe types. The computations of the change in instrument reading due to the defects have led to an inversion'' ...

1989-01-01

483

Grain boundary mobility in Y{sub 2}O{sub 3}: defect mechanism and dopant effects  

Energy Technology Data Exchange (ETDEWEB)

The effects of the dopants, Mg{sup 2+}, Sr{sup 2+}, Sc{sup 3+}, Yb{sup 3+}, Gd{sup 3+}, La{sup 3+}, Ti{sup 4+}, Zr{sup 4+}, Ce{sup 4+}, and Nb{sup 5+}, on the grain boundary mobility of dense Y{sub 2}O{sub 3} have been investigated from 1,500 to 1,650 C. Parabolic grain growth has been observed in all cases over a grain size from 0.31 to 12.5 {micro}m. Together with atmospheric effects, the results suggest that interstitial transport is the rate-limiting step for diffusive processes in Y{sub 2}O{sub 3}, which is also the case in CeO{sub 2}. The effect of solute drag cannot be ascertained but the anomalous effect of undersized dopants (Ti and Nb) on diffusion enhancement, previously reported in CeO{sub 2}, is again confirmed. Indications of very large binding energies between aliovalent dopants and oxygen defects are also observed. Overall, the most effective grain growth inhibitor is Zr{sup 4+}, while the most potent grain growth promoter is Sr{sup 2+}, both at ...

1996-07-01

484

Grain boundary mobility in Y_2O_3: defect mechanism and dopant effects  

International Nuclear Information System (INIS)

The effects of the dopants, Mg"2"+, Sr"2"+, Sc"3"+, Yb"3"+, Gd"3"+, La"3"+, Ti"4"+, Zr"4"+, Ce"4"+, and Nb"5"+, on the grain boundary mobility of dense Y_2O_3 have been investigated from 1,500 to 1,650 C. Parabolic grain growth has been observed in all cases over a grain size from 0.31 to 12.5 microm. Together with atmospheric effects, the results suggest that interstitial transport is the rate-limiting step for diffusive processes in Y_2O_3, which is also the case in CeO_2. The effect of solute drag cannot be ascertained but the anomalous effect of undersized dopants (Ti and Nb) on diffusion enhancement, previously reported in CeO_2, is again confirmed. Indications of very large binding energies between aliovalent dopants and oxygen defects are also observed. Overall, the most effective grain growth inhibitor is Zr"4"+, while the most potent grain growth promoter is Sr"2"+, both at 1.0% concentration.

485

Formation of B_iO_i, B_iC_s, and B_iB_sH_i defects in e-irradiated or ion-implanted silicon containing boron  

International Nuclear Information System (INIS)

The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments on irradiated p-Si containing B. The levels observed at E_c-0.23, E_v+0.29, and E_v+0.51 eV are assigned to B_iO_i, B_iC_s, and B_iB_sH_i respectively. B_iC_s is passivated by one H atom. Evidence for the existence of B_iC_s has implications for mechanisms involved in the suppression of transient-enhanced diffusion of boron in ion-implanted Si by C.

2003-07-28

486

Formation kinetics and work function tuning of Pd_2Si fully silicided metal gate  

International Nuclear Information System (INIS)

The formation kinetics of Pd_2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd_2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not only on the silicidation annealing temperature but also on the heating ramp-up rate and the presence of impurities. Fast ramp-up annealing was necessary to avoid defect formation, such as voids in the silicide film at the oxide interface, and to obtain a homogeneous silicide film containing only Pd_2Si phase. The most severe effect on the silicidation reaction, that is the increase in defect formation, was brought about by As predoping. The work function of the Pd_2Si FUSI gate was modulated by impurity pileup at the Pd_2Si/SiO_2 interface, as in the case of the NiSi FUSI gate. However, the work function shifted in the opposite direction to that of the NiSi FUSI gate for As, P, Sb, and BF_2. A wide ...

2007-04-01

487

Fast diagnosis and treatment of crack-like defect injuriousness in nuclear power plant equipment  

Energy Technology Data Exchange (ETDEWEB)

Increasingly stringent safety requirements governing the nuclear industry have made it essential to gain in-depth knowledge of the injuriousness of cracking phenomena in auxiliary and secondary nuclear power plant systems, and to devise methods of rapidly evaluating potentially injurious flaws. The Defect Injuriousness Diagnosis and Treatment Package (DIDTP) discussed in this paper was developed by Framatome, a French-based PWR builder, with this goal in mind. A general description is given of the DIDTP, which is made up of tables and nomographs illustrating the injuriousness of flaws liable to be encountered in the most severely loaded regions of plant systems. The basic principles underlying the DIDTP, together with computational methods and application procedure, are detailed. Two practical examples illustrating the use of the diagnostic system are presented, one applied to the main steam line, the other to gate valve wedges. The types of results obtained and ...

1985-01-01

488

Enhanced defect detection and sizing accuracy using matrix phased array ultrasonic tools  

Energy Technology Data Exchange (ETDEWEB)

Although ultrasonic testing inspection technology and tools have improved significantly, there is still a need for more reliable detection, monitoring, and accurate sizing of crack-like and planar defects, complex corrosion damage, and detection of secondary features within deformed pipe. Ultrasonic two dimensional (2D) matrix phased array technology offers some unique advantages that make the technology promising for improving detection and sizing of pipeline flaws resulting from welding or from in-service damage. Ultrasonic modeling and simulation has been conducted to evaluate the detection and sizing capabilities of 2D matrix arrays for various pipeline inspection concepts. Simulations have been performed using both flexible and rigid array probes. Inspection concepts using rigid probes were evaluated for inspections from both the outside and inside pipe surfaces, while flexible probes were evaluated primarily for inspection from the outside surface when dents ...

2009-07-01

489

Elastic Properties of Nematic Liquid Crystals Formed by Living and Migrating Cells  

CERN Document Server

In culture migrating and interacting amoeboid cells can form nematic liquid crystal phases. A polar nematic liquid crystal is formed if the interaction has a polar symmetry. One type of white blood cells (granulocytes) form clusters where the cells are oriented towards the center. The core of such an orientational defect (disclination) is either a granulocyte forced to be in an isotropic state or another cell type like a monocyte. An apolar nematic liquid crystal is formed if the interaction has an apolar symmetry. Different cell types like human melanocytes (=pigment cells of the skin), human fibroblasts (=connective tissue cells), human osteoblasts (=bone cells), human adipocytes (= fat cells) etc., form an apolar nematic liquid crystal. The orientational elastic energy is derived and the orientational defects (disclination) of nematic liquid crystals are investigated. The existence of half-numbered disclinations show that the nematic phase ...

1998-01-01

490

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface  

Energy Technology Data Exchange (ETDEWEB)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.

2004-02-01

491

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface  

International Nuclear Information System (INIS)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

2004-02-01

492

Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter extractions have ...

2004-02-01

493

Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon  

International Nuclear Information System (INIS)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter ...

2004-02-01

494

Detection and classification of bearing flaking using kullback discrimination information; Kullback shikibetsu johoryo (KDI) wo mochiita jikuuke no tendomen hakuri no kenchi to shikibetsu  

Energy Technology Data Exchange (ETDEWEB)

Since bearing is in wide use as basic parts for rotary machines, detection and diagnosis of its defects are important in practical use. To discriminate defect portions by early detection of roller bearing flaking, the conventional parameter method using peakedness is poor. Thus to directly obtain difference in waveform, the new method was applied to such detection which uses KDI as the scale of a difference in waveform, and a most neighborhood classification rule based on KDI. The detection and discrimination abilities of this method was studied mainly in experiment. The experiment used a bench scale rotor and a supporting bearing, and attempted detection and discrimination of no flaking, outer ring flaking and inner ring flaking. As a result, this method could detect and discriminate fine flaking which was never detected by conventional method. Since selection of standard data is essential for this method, a distance ratio was introduced as ...

1998-06-15

495

Current trends in ion implantation  

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing ...

2001-07-01

496

Application of automatic inspection system to nondestructive test of heat transfer tubes of primary pressurized water cooler in the high temperature engineering test reactor. Joint research  

International Nuclear Information System (INIS)

Heat transfer tubes of a primary pressurized water cooled (PPWC) in the high temperature engineering test reactor (HTTR) form the reactor pressure boundary of the primary coolant, therefore are important from the viewpoint of safety. To establish inspection techniques for the heat transfer tubes of the PPWC, an automatic inspection system was developed. The system employs a bobbin coil probe, a rotating probe for eddy current testing (ECT) and a rotating probe for ultrasonic testing (UT). Nondestructive test of a half of the heat transfer tubes of the PPWC was carried out by the automatic inspection system during reactor shutdown period of the HTTR (about 55% in the maximum reactor power in this paper). The nondestructive test results showed that the maximum signal-to-noise ratio was 1.8 in ECT. Pattern and phase of Lissajous wave, which were obtained for the heat transfer tube of the PPWC, were different from those obtained for the artificially defected tube. In ...

497

Anomalous phosphorus diffusion in Si during postimplantation annealing  

Energy Technology Data Exchange (ETDEWEB)

The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged phosphorus-interstitial pairs agree well with the obtained experimental results. {copyright} 2001 ...

2001-06-11

498

0--30 keV low-energy focused ion beam system  

Energy Technology Data Exchange (ETDEWEB)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

1988-05-01

499

0--30 keV low-energy focused ion beam system  

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.