WorldWideScience
1

Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties  

International Nuclear Information System (INIS)

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO_x) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO_x shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO_x nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO_x shell acts as an effective insulating layer. The ZnTe-SiO_x nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

2009-11-11

2

Fully transparent thin-film transistor devices based on SnO2 nanowires.  

Science.gov (United States)

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on ...

2007-06-27

3

Selective patterned growth of single-crystal organic nanowires of Ag-TCNQ with chemical raction method  

Energy Technology Data Exchange (ETDEWEB)

Abstract: We report for the selective-area chemical synthesis of semiconductor single-crystal organic nanowires of silver-tetracyanoquinodimethane (Ag-TCNQ). Straight and smooth Ag-TCNQ nanowires can be produced and patterned on micrometer and nanometer scale on silicon substrates covered with a thin layer of Ag film through the reaction of TCNQ and Ag in a simple gas-solid chemical reaction process. Ag-TCNQ nanowires are characterized by UV-vis, IR and Raman spectroscopy, respectively. The Ag-TCNQ nanowires grows preferentially along the [100] direction of strong - stacking of Ag-TCNQ molecules. Nanodevices based on these nanowires are fabricated using focus ion beam (FIB) technique. Electrical properties are characterized and I-V hysteresis is observed, which shows memory effect with electrical switching of three orders on-off ratio. These nanowires could be ...

2008-09-01

4

FABRICATION OF BISMUTH NANOWIRE DEVICES USING FOCUSED ION BEAM MILLING  

International Nuclear Information System (INIS)

In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO_2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam ...

2009-07-23

5

Synthesis of Si nanowires for MEMS cantilever sensor applications  

Science.gov (United States)

We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the nanowires enabled by a ...

2004-12-01

6

Ge/Si nanowire mesoscopic Josephson junctions  

CERN Document Server

The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in the NW, the critical supercurrent can be tuned from zero to greater than 100 nA. Furthermore, discrete sub-bands form in the NW due to confinement in the radial direction, which results in stepwise increases in the critical current as a function of gate voltage. Transport measurements on these superconductor-NW-superconductor devices reveal high-order (n = 25) resonant multiple Andreev reflections, indicating that the NW channel is smooth and the charge transport is highly coherent. The ability to create and control coherent superconducting ordered states ...

2006-01-01

7

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy  

International Nuclear Information System (INIS)

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping ...

2010-02-01

8

Manganese oxide nanowires, films, and membranes and methods of making  

Energy Technology Data Exchange (ETDEWEB)

Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer ...

2008-10-21

9

Nanostructured mesoporous materials for lithium-ion battery applications  

Science.gov (United States)

The Energy crisis happens to be one of the greatest challenges we are facing today. In this view, much effort has been made in developing new, cost effective, environmentally friendly energy conversion and storage devices. The performance of such devices is fundamentally related to material properties. Hence, innovative materials engineering is important in solving the energy crisis problem. One such innovation in materials engineering is porous materials for energy storage. Porous electrode materials for lithium-ion batteries (LIBs) offer a high degree of electrolyte-electrode wettability, thus enhancing the electrochemical activity within the material. Among the porous materials, mesoporous materials draw special attention, owing to shorter diffusion lengths for Li+ and electronic movement. Nanostructured mesoporous materials also offer better packing density compared to their nanostructured counterparts such as nanopowders, ...

2011-05-01

10

Instabilities in Focused Ion Beam-patterned Au nanowires  

British Library Electronic Table of Contents (United Kingdom)

Focused Ion Beam (FIB) technology has become an indispensable enabling tool for micro nano fabrications. One important application is to use FIB for patterning conducting nanowires of metals down to a few tens of nanometre for applications such as interconnects, heaters and temperature nanosensors. A series of experiments on Au nanowires fabricated by FIB on SixNy membrane show that nanowires with width 50nm have structural instabilities. These are liquid like and first show-up as undulations in nanowire width with clearly defined wave lengths. For smaller widths (20nm) the instabilities grow and the wires eventually break-up into spherical balls. Further experiments show that the nanowires can be made stable to smaller widths by the use of a Cr underlayer to enhance surface wetting. The o...

2011-01-01

11

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications  

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

2004-09-01

12

Materials aspects of multijunction solar cells  

Energy Technology Data Exchange (ETDEWEB)

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

1991-05-01

13

Preparation of Permalloy nanostructures using focused ion beam methods  

International Nuclear Information System (INIS)

Focused ion beam (FIB) milling is a powerful and versatile tool for the maskless fabrication of structures and devices at micro- and nanometer scales. The approach is based on the milling and deposition capabilities of a focused ion beam, where the latter is achieved by ion-beam-assisted decomposition of a metalorganic gas precursor of the specific material that has to be deposited. The combination of FIB and scanning electron microscopy in the same unit (so-called dual-beam unit) further expands the capabilities of the approach by the possibility of performing electron-beam-assisted deposition and inspection. Permalloy nanowires with electrical contacts patterned by FIB-Pt deposition were prepared in the dual-beam unit. Various types of notches to pin magnetic domain walls were additionally fabricated by means of FIB. The fabrication parameters for a structural modification of the Permalloy structures without too strongly affecting the ...

2010-03-21

15

Visible-wavelength semiconductor lasers and arrays  

Energy Technology Data Exchange (ETDEWEB)

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

1996-09-17

16

Synthesis and characterization of electrodeposited permalloy (Ni{sub 80}Fe{sub 20})/Cu multilayered nanowires  

Energy Technology Data Exchange (ETDEWEB)

Permalloy (Ni{sub 80}Fe{sub 20})/Cu multilayered nanowires (NWs) were electrodeposited using a template directed method from sulfate baths via pulse potential technique. Microstructures and compositions of the nanowires were characterized using various microscopy and spectroscopy techniques. To synthesize compositionally uniform nanowires with high efficiency, new sulfate baths with a high content of Ni{sup 2+} were developed. The effects of deposition potential and concentration of metal ions were optimized to reduce composition inhomogeneity and incorporation of copper in the permalloy layers. Composition of the NiFe layers was found to be close to 20 at% Fe with a maximum of 5 at% Cu. TEM analysis indicated that individual nanowires exhibit distinct and coherent layering structure with rough and wavy interfaces. A synthesized single nanowire was also AC dielectrophoretically ...

2010-12-15

17

Transport properties of single-crystalline n-type semiconducting PbTe nanowires  

International Nuclear Information System (INIS)

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm"2 V"-"1 s"-"1 and 8.8 x 10"1"7 cm"-"3, respectively. The Seebeck coefficients (-72 ?V K"-"1) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.

2009-10-14

18

Quantum Information Processing Using Local Control of ...  

Science.gov (United States)

... The insu- lation between gate and nanowire is the high-k dielectric HfO2, deposited by atomic layer depo- sition (ALD). ...

2006-12-31

19

Pressure-dependent photoluminescence study of ZnO nanowires  

Energy Technology Data Exchange (ETDEWEB)

The pressure dependence of the photoluminescence (PL) transition associated with the fundamental band gap of ZnO nanowires has been studied at pressures up to 15 GPa. ZnO nanowires are found to have a higher structural phase transition pressure around 12 GPa as compared to 9.0 GPa for bulk ZnO. The pressure-induced energy shift of the near band-edge luminescence emission yields a linear pressure coefficient of 29.6 meV/GPa with a small sublinear term of -0.43 meV/GPa{sup 2}. An effective hydrostatic deformation potential -3.97 eV for the direct band gap of the ZnO nanowires is derived from the result.

2004-09-13

20

Facile synthesis and the sensitized luminescence of europium ions-doped titanate nanowires  

International Nuclear Information System (INIS)

Europium (Eu) ions-doped titanate nanowires were synthesized via a sol-gel-hydrothermal chemistry and they were found to be roll multilayered trititanate-type nanowires intercalated with Eu3+ and alkali ions. The average diameter was about 20 nm for nanowires synthesized in NaOH solution and about 10 nm for nanowires synthesized in KOH solution. Under ultraviolet excitation the nanowires showed bright red emission corresponding to 5D0-7Fj of Eu3+ ions at room temperature, which was attributed to the non-radiative energy transfer from the surrounding Ti-O octahedral nanosheets to the central Eu3+ ions in interlayer. The luminescent properties of nanowires were influenced by the type of co-intercalated alkali ions, doping degree, hydrothermal and annealing temperatures. The intensity ratio of 5D0-7F2 to 5D0-7F1 of titanate nanowires ...

2009-04-15

21

Application of neutron transmutation doping method to initially p-type silicon material  

Energy Technology Data Exchange (ETDEWEB)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...

2009-07-15

22

Application of neutron transmutation doping method to initially p-type silicon material  

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

2008-05-12

23

Study of porous silicon morphologies for electron transport  

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron diffraction patterns verified that bulk porous ...

1993-05-17

24

Influence of several factors on the growth of selenium nanowires induced by silver nanoparticles  

Energy Technology Data Exchange (ETDEWEB)

This paper presents a study on the crystallization and growth mechanism of selenium nanowires induced by silver nanoparticles at ambient conditions with special reference to the effects of factors such as the shapes and size of silver nanoparticles, the induced reaction time, and the molar ratio of Ag{sup 0} to SeO{sub 3}{sup 2-} ions. The synthesis approach is conducted with no need of any stabilizers, and with no sonochemical process and/or templates. It is found that whether silver spherical particles or colloids can lead to the formation of nanowires with average diameter of 25 nm and lengths up to a few micrometers, and silver nanoplates lead to the formation of flat Se nanostructures. In particular, Au, Cu, Pt, and Pd particles cannot induce the growth of selenium nanowires in aqueous solution at room temperature. The results indicate that silver particles play a critical role in determining the growth of selenium ...

2008-03-15

25

Untitled - NASA Technical Report Server (NTRS)  

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

26

Application of neutron transmutation doping method to initially p-type silicon material  

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

2009-01-01

27

Bimetallic Pt-Ag and Pd-Ag nanoparticles  

International Nuclear Information System (INIS)

We report studies of bimetallic nanoparticles with 15%-16% atomic crystal parameters size mismatch. The degree of alloying was probed in a 2-nm Pt core (smallest attainable core size) of Pt-Ag nanoparticles (completely immiscible in bulk) and 20-nm-diameter Pd-Ag nanowires (completely miscible in bulk). Particles were synthesized radiolytically, and depending on the initial parameters, they assume spherical or cylindrical (nanowire) morphologies. In all cases, the metals are seen to follow their bulk alloying characteristics. Pt and Ag segregate in both spherical and wire forms, which indicates that strain due to crystallographic mismatch overcomes the excess surface free energy in the small particles. The Pd-Ag nanowires alloy similar to previously reported spherical Pd-Ag particles of similar diameter and composition.

2005-05-01

28

Synthesis of ?-Al2O3 nanowires through a boehmite precursor route  

British Library Electronic Table of Contents (United Kingdom)

Crystalline ?-Al2O3 nanowires with diameter, 20?40?nm, length above 600?nm and aspect ratio above 30 have been successfully synthesized by thermal decomposition of boehmite (?-AlOOH) precursors obtained via hydrothermal route by using AlCl3, NaOH and NH3 as starting materials. Thermogravimetric analysis (TG), differential thermal analysis (DTA), X-ray diffraction (XRD), transmission electron microscope (TEM), selected area electron diffraction (SAED) and high resolution transmission electron microscope (HRTEM) were used to characterize the features of the as-made ?-Al2O3 nanowires and their ?-AlOOH precursors. The pH value of the solution and the mixed precipitant play important roles in the formation of ?-AlOOH nanowires. After calcination at 500?C for 2?h, the orthorhombic ?-AlOOH transf...

2011-01-01

29

Blending of nanoscale and microscale in uniform large-area sculptured thin-film architectures  

CERN Document Server

The combination of large thickness ($>3$ $\\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the first time. The nanoscale and the microscale have thus been blended together in sculptured thin films with transverse architectures. SiO$_x$ ($x\\approx 2$) nanowires were grown by electron--beam evaporation onto silicon substrates both with and without photoresist lines (1--D arrays) and checkerboard (2--D arrays) patterns. Atomic self--shadowing due to oblique--angle deposition enables the nanowires to grow continuously, to change direction abruptly, and to maintain constant cross--sectional diameter. The selective growth of nanowire assemblies on the top surfaces of both 1--D and 2--D arrays can be understood and predicted using simple geometrical shadowing ...

2003-01-01

30

Photoluminescence of manganese- and copper-doped CdS nanowires  

Energy Technology Data Exchange (ETDEWEB)

Arrays of CdS:Mn{sup 2+}:Cu{sup +} micro- and nanowires grown in polycarbonate ion-track templates exhibit photoluminescence in the spectral domain ranging from 500 to 800 nm at room temperature. A comparison with similar CdS and CdS:Mn{sup 2+} wire arrays is presented. The individual contributions to the emission spectra of Cu{sup +} and Mn{sup 2+} ions in the CdS matrix are explained using their energy level schemes. Also SEM, EDX and EPR data are given for these wires. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2005-02-01

31

Photoluminescence of manganese- and copper-doped CdS nanowires  

International Nuclear Information System (INIS)

Arrays of CdS:Mn"2"+:Cu"+ micro- and nanowires grown in polycarbonate ion-track templates exhibit photoluminescence in the spectral domain ranging from 500 to 800 nm at room temperature. A comparison with similar CdS and CdS:Mn"2"+ wire arrays is presented. The individual contributions to the emission spectra of Cu"+ and Mn"2"+ ions in the CdS matrix are explained using their energy level schemes. Also SEM, EDX and EPR data are given for these wires. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2005-02-01

32

A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons  

Energy Technology Data Exchange (ETDEWEB)

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge ...

1999-04-01

33

Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors  

Energy Technology Data Exchange (ETDEWEB)

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

2009-08-15

35

Diffusion in silicon isotope heterostructures  

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion ...

2004-05-14

36

Silicon electrochemistry related to the formation of porous silicon  

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

1988-01-01

37

Fabrication of nanometer structures by means of a fine-focused ion beam  

International Nuclear Information System (INIS)

Focused Ion Beams are an important approach for nanostructure fabrication in the semiconductor industry and material sciences. Applications in sputtering and ion induced deposition of materials are investigated. The IMSA FIB system equipped with the high resolution Orsay Physics CANION M31plus ion column with current densities up to 10 A/cm"2 including a gas injection system is applied. In this work the ion beam induced chemical vapour deposition of tungsten, wherefore tungsten hexacarbonyl as precursor gas is used for a first investigation. Conductive tungsten-nanowires with smallest cross-section upon a substrate of Si and SiO_2 are produced. The ion beam parameters of this focused ion beam system are optimized for the metal deposition. A short insight in the theory of layer nucleation and growth induced by the ion beam during the metal deposition is given. The layer quality is determined by Auger electron analysis which shows the components in atomic percent ...

2000-03-01

38

Thermoelectric properties of ZnO nanowires: A first principle research  

British Library Electronic Table of Contents (United Kingdom)

By means of ab-initio electronic structure calculation and one-dimensional Boltzmann transport equation solution, we investigate the size dependent thermoelectric (TE) properties of n-type ZnO nanowires (NWs) and surface passivation effects. As demonstrated by our calculations, largest figure of merit ZT achievable in thin NWs is larger than that in wide NWs, whereas being restrained by higher demand of n-type doping. Moreover, bare NWs are superior in TE application comparing with the passivated. To compete with conventional TE materials, lattice thermal conductivity of ZnO NWs should be at least 2 orders of magnitude lower than bulk value.

2011-01-01

39

SI/SIGE NANOWIRE ARRAYS FOR THERMOELECTRICITY  

Environmental Research Database

ObjectivesFor thermoelectricity both low thermal conductivity and high electrical conductivity are required. High electrical conductivity should be established via a high carriers concentration and a high mobility.~%~The aim of this feasibility study is to investigate a method of modulation doping of Si nanowires in order to generate high carrier concentrations without the need for impurity doping, thus retaining high mobilities.~%~~%~The objectives are (in chronological order):~%~- reduction of the wire [continued...]DescriptionIn recent years, the increasing dependence of society on fossil fuels for socio-economical development has become a cause of great concern. The possibility of a reduced availability of fossil fuels, and the effect of these fuels on climate change, have encouraged research into alternative energy sources. Many of these alternatives are old ideas, implemented using modern techniques. This proposal plans to investigate the ...

2008-01-30

40

Electrodeposition and magnetic properties of three-dimensional bulk and shell nickel mesostructures  

British Library Electronic Table of Contents (United Kingdom)

In this paper we demonstrate the electrodeposition of nickel, a common ferromagnetic material, in various magnetically desirable shapes including nanowires, nanoparticles and highly faceted shells. In order to obtain three dimensional mesostructures, the electrochemical deposition of nickel was performed on highly oriented pyrolytic graphite (HOPG) under different electrolyte composition and deposition potential conditions. Under potentiostatic deposition at one distinct potential negative with respect to the reversible potential of nickel, three stages of nucleation and growth take place leading to a complex morphology of deposits. However, dual-pulse potential deposition and electrodeposition in low pH solutions causing hydrogen evolution, lead to nickel deposits in the form of nanowires...

2011-01-01

41

Core-shell polymer nanorods by a two-step template wetting process  

International Nuclear Information System (INIS)

One-dimensional core-shell polymer nanowires offer many advantages and great potential for many different applications. In this paper we introduce a highly versatile two-step template wetting process to fabricate two-component core-shell polymer nanowires with controllable shell thickness. PLLA and PMMA were chosen as model polymers to demonstrate the feasibility of this process. Solution wetting with different concentrations of polymer solutions was used to fabricate the shell layer and melt wetting was used to fill the shell with the core polymer. The shell thickness was analyzed as a function of the polymer solution concentration and viscosity, and the core-shell morphology was observed with TEM. This paper demonstrates the feasibility of fabricating polymer core-shell nanostructures using our two-step template wetting process and opens the arena for optimization and future experiments with polymers that are desirable for specific ...

2009-07-22

42

Amperometric biosensor for hydrogen peroxide based on horseradish peroxidase onto gold nanowires and TiO2 nanoparticles  

British Library Electronic Table of Contents (United Kingdom)

An electrochemical biosensor for determination of hydrogen peroxide (H2O2) was fabricated, based on the electrostatic immobilization of horseradish peroxidase (HRP) with one-dimensional gold nanowires (Au NWs) and TiO2 nanoparticles (nano-TiO2) on a gold electrode. The nano-TiO2 can give a biocompatible microenvironment and compact film, and the Au NWs can provide fast electron transferring rate and greatly add the amount of HRP molecules immobilized on the electrode surface. Au NWs were characterized by ultraviolet?visible spectra and transmission electron microscope. The electrode modification process was probed by cyclic voltammetry and electrochemical impedance spectroscopy. Chronoamperometry was used to study the electrochemical performance of the resulting biosensor. Under optimal co...

2011-01-01

43

A ZnO nanowire array film with stable highly water-repellent properties  

Energy Technology Data Exchange (ETDEWEB)

Highly water-repellent surfaces have been prepared from arrayed nanowires of zinc oxide (ZnO) by a treatment with stearic acid. The layers are electrochemically deposited on a nanocrystalline seed layer from an oxygenated aqueous zinc chloride solution. An advancing contact angle (CA) as high as 176{sup 0} is obtained with a very small hysteresis {approx}1{sup 0}. These results, supplemented by infrared spectroscopy, show that the stearic acid forms a very well-packed self-assembled monolayer. The CA measurements show a very good stability of the treated surface even when exposed to harsh conditions or long-term ambient illumination.

2007-09-12

44
45

MAGNETIC RESONANCE IMAGING DEVICE  

J-STORE (Japan)

Full Text Available

2010-08-31

46

DISPOSING DEVICE FOR WASTE  

J-STORE (Japan)

Full Text Available

2005-12-19

47

BRAKE DEVICE FOR ROLLING STOCK  

J-STORE (Japan)

Full Text Available

2007-11-22

48

Conductance quantization in ferromagnetic Ni nano-constriction  

Energy Technology Data Exchange (ETDEWEB)

The conductance in ferromagnetic Ni nano-wire is quantized in units of 2e{sup 2}/h in the absence of magnetic field, while the units switch to e{sup 2}/h in the magnetic field. The fractional units of 0.7e{sup 2}/h and 1.4e{sup 2}/h with and without magnetic field appear under the application of high bias-voltage. The spin polarization and bias-voltage play an important role in the electric conduction.

2002-02-01

49

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon  

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology for the neutron ...

2007-10-15

50

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon  

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology for the neutron ...

2007-10-01

51

High bandgap window layer for GaAs solar cells and fabrication process therefor  

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power ...

1979-05-29

52

.N& 21762 - NASA Technical Report Server (NTRS)  

Science.gov (United States)

of the supplier of pulled p-type silicon material. of G-6 and E 8 centers irradiated in the 1 t o 3 MeV range. tions w i l l be performed using the General ...

53

Properties of s-p and s-d type A-15 superconductors: a comparison  

International Nuclear Information System (INIS)

In general there are actually two different types of A-15 compounds (A_3B) whose superconducting properties depend on whether the B atoms are transition elements (s-d type) or nontransition elements (s-p type). The properties in which the s-d type superconductors show marked differences in behavior from the s-p type include: (1) stoichiometry and range of composition, (2) the strong influence of N(O) on the stability and T/sub c/ of the phase, and (3), the effect of composition and atomic ordering on the T/sub c/ of the phase. These differences are discussed and a conclusion presented.

54

Simulation approaches for nano-scale semiconductor devices  

CERN Document Server

Simulation approaches for nano-scale semiconductor devices

2004-01-01

55

Hydrogen-related surface modifications of 20 nm thin straight-sided niobium nano-wires and niobium meander-films  

Energy Technology Data Exchange (ETDEWEB)

Nano-wire arrays of Niobium were produced by small angle sputtering on facetted sapphire, using the self shadowing effect of the facets. A wire width of about 80 nm was adjusted, the mean (maximum) wire height was about 20 nm (30 nm), the length can be in the cm range. Meander-film morphologies of 20 nm mean (26 nm maximum) thickness were produced by conventional sputtering onto smooth sapphire substrates at elevated temperatures. The morphology of the wires was investigated with atomic force microscopy (AFM), using contact mode. Meander-films were studied by scanning tunnelling microscopy (STM). Hydrogen loading was performed by instantaneously increasing the hydrogen gas pressure above the solubility limit. Thus, an elongated hydride could be monitored in an about 30 nm thick wire. STM studies on meander-films show the presence of cylindrical hydrides. Local out-of-plane and in-plane expansion can be explained by the formation of hydrides, being coherent with the ...

2007-10-31

56

Enhancement of corrosion protection efficiency of iron by poly(aniline-co-amino-naphthol-sulphonic acid) nanowires coating in highly acidic medium  

International Nuclear Information System (INIS)

Nanowires of copolymers film based on aniline and 1-amino-2-naphthol-4-sulphonic acid were electrochemically synthesized on the iron electrode by cyclic voltammetry using oxalic acid as a supporting electrolyte. Protective properties of copolymer film on the iron surface in 1.0 M HCl solution was investigated by chronoamperometry, potentiodynamic polarization technique and electrochemical impedance spectroscopy (EIS). The results showed that the copolymer film showed the significant shifting in the corrosion potential and greater charge transfer resistance. Moreover, the copolymer showed the larger degree of surface coverage onto the iron surface, reflecting the higher protection for corrosion of the iron in acidic medium. In addition, the film constitutes a physical as well as a chemical barrier layer due to the presence of -OH and -NH groups in ANSA unit, which provides passivity protection in polymer coatings. The mechanism of corrosion protection of iron by ...

2010-11-30

57

Domain wall pining in a jointed ferromagnetic nano-wire  

Energy Technology Data Exchange (ETDEWEB)

The magnetoresistance in an FeNi submicron-structure comprising two wires of 80 and 200 nm in width connected in series was measured at 77 K. When the external magnetic field was applied parallel to the wire axis, two switching fields corresponding to the distinct coercive force of the two wires were observed. When the external magnetic field was applied at an angle of {theta}>30 deg. to the wire axis one switching field was observed, indicating simultaneous magnetization reversal in both wires. This indicates that the domain-wall trapping around the joint can be controlled systematically in terms of the direction of the external magnetic field.

2004-05-01

58

Design of intelligent nucleobases and DNA HOMO mapping.  

Science.gov (United States)

We have designed a new nucleobase, benzodeazaadenine (BDA) that has a stronger charge transport ability than guanine and is not destroyed during charge transport process. By incorporating this new nucleobase into DNA, we demonstrated a protocol for real DNA nano-wire that is far superior to natural DNA. We also demonstrated that the selectivity for the interaction of Mn(II) ion with guanine N7 in G runs is a HOMO-controlled process, and as a consequence, the selectivity for G-metal ion interactions obtained by 15N-NMR studies would directly reflect the HOMO distribution of G-containing sequences in B-DNA. PMID:12903077

2002-01-01

59

Limitations of silicon devices for quantum computing  

Energy Technology Data Exchange (ETDEWEB)

There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

2004-04-28

60

Vacancy complex scattering mobility of holes in IR-photoexcited p-type ZnTe  

Energy Technology Data Exchange (ETDEWEB)

Conductivity and Hall effect measurements were made in dark and IR-photoexcited p-type ZnTe samples between 77 and 300 K. Acceptor vacancy complexes of activation energies 0.09-0.1 eV were found to be present in the photoexcited samples. Different possible scattering mobilities were considered for both samples to explain the observed hole mobility. In the photoexcited sample a scattering mobility due to vacancy complexes was suggested for the first time to explain the results. The scattering centres were associated with native vacancy complexes segregated at the dislocations sites. The expression for the complex scattering mobility has been deduced using the curve fitting method to be {mu}{sub C}=(6.6x10{sup -11})T{sup 5} e{sup 725/T}. (orig.).

1990-10-01

61

Properties of the passive films on cold worked stainless steels in conditions of susceptibility to stress corrosion cracking  

International Nuclear Information System (INIS)

Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)

2004-01-01

62
63

Short-Term Metal/Organic Interface Stability Investigations of Organic Photovoltaic Devices: Preprint  

Energy Technology Data Exchange (ETDEWEB)

This paper addresses one source of degradation in OPV devices: the metal/organic interface. The basic approach was to study the completed device stability vs. the stability of the organic film itself as shown in subsequent devices fabricated from the films.

2008-05-01

66

AIR BREATHING DEVICE FOR PIPE LINE  

J-STORE (Japan)

Full Text Available

2004-11-29

67

Finite Element Analysis of Magnetoelastic Plate Problems.  

Science.gov (United States)

... in the design of such devices as fusion reactors, magnetohydrodynamic generators, magnetically levitated vehicles, magnetic forming devices, and ...

1981-08-01

68

Waveguide device and method for making same  

Energy Technology Data Exchange (ETDEWEB)

A monolithic micromachined waveguide device or devices with low-loss, high-power handling, and near-optical frequency ranges is set forth. The waveguide and integrated devices are capable of transmitting near-optical frequencies due to optical-quality sidewall roughness. The device or devices are fabricated in parallel, may be mass produced using a LIGA manufacturing process, and may include a passive component such as a diplexer and/or an active capping layer capable of particularized signal processing of the waveforms propagated by the waveguide.

2007-08-14

69

Schottky barrier and homojunction gallium arsenide solar cells  

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

1983-01-01

70

Method of mitigating titanium impurities effects in p-type silicon material for solar cells  

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

1980-05-01

71

Ultraviolet detectors based on ZnO films by thermal oxidation of Zn metallic films  

British Library Electronic Table of Contents (United Kingdom)

Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 ?C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.

2008-01-01

72

Schottky barrier modulation on silicon nanowires  

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

2007-03-26

73

Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure  

International Nuclear Information System (INIS)

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

2011-07-07

74

High speed inverted optical-resolution photoacoustic microscopy  

Science.gov (United States)

Photoacoustic microscopy (PAM) offers label-free, optical absorption contrast. A high-speed, high-resolution PAM system in an inverted microscope configuration with a laser pulse repetition rate of 100,000 Hz and a stationary ultrasonic transducer was built. Four-dimensional in vivo imaging of microcirculation in mouse skin was achieved at 18 three-dimensional volumes per second with repeated two-dimensional raster scans of 100 by 50 points. The corresponding twodimensional B-scan (50 A-lines) frame rate was 1800 Hz, and the one-dimensional A-scan rate was 90,000 Hz. The lateral resolution is 0.23+/-0.03 ?m for Au nano-wire imaging, which is 2.0 times below the diffraction limit.

2011-02-01

75

Simple device for scanning image  

CERN Document Server

The simple device for scanning image is described. It has much in common with usual TV camera, with an electron beam replaced by an optical one. After the general description of the device, we present a simple experimental illustration.

2002-01-01

76

A device for controlling the degree of discharge intensity of a storage battery  

Energy Technology Data Exchange (ETDEWEB)

The device is designed for automatic testing of the degree of discharge of tractive storage batteries (AB) for electric loaders, electric cars and electric ore locomotives. The basic electrical schematic of the device is cited.

1983-01-01

77

Silicon MOS inductor  

Energy Technology Data Exchange (ETDEWEB)

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

1981-01-01

78

Fabrication of metallic contacts to nanometre-sized materials using a focused ion beam (FIB)  

Energy Technology Data Exchange (ETDEWEB)

Nanometre-sized materials, like nanowires, nanoparticles or nanobelts, are gaining huge interest as building blocks of modern electronic nanodevices. Their fabrication feasibility has been demonstrated in the last years, and different routes are already well established in order to synthesize these materials. However, the assessment of their electrical properties is still a challenging issue, due to the difficulty to perform a precise nanolithography process allowing the access to such small structures. The fabrication of metallic contacts with precision in the nanometre range is necessary, as well as achieving a flexible system that allows to contact individual structures. Such a system could be a dual-beam Focused Ion Beam instrument, which combines Scanning Electron Microscopy (SEM) and Focused Ion Beam (FIB) in one machine, able to assist deposition of materials with nanometre precision. In this work, the methodology of fabrication of metallic nanocontacts to ...

2006-07-15

79

Fabrication of metallic contacts to nanometre-sized materials using a focused ion beam (FIB)  

International Nuclear Information System (INIS)

Nanometre-sized materials, like nanowires, nanoparticles or nanobelts, are gaining huge interest as building blocks of modern electronic nanodevices. Their fabrication feasibility has been demonstrated in the last years, and different routes are already well established in order to synthesize these materials. However, the assessment of their electrical properties is still a challenging issue, due to the difficulty to perform a precise nanolithography process allowing the access to such small structures. The fabrication of metallic contacts with precision in the nanometre range is necessary, as well as achieving a flexible system that allows to contact individual structures. Such a system could be a dual-beam Focused Ion Beam instrument, which combines Scanning Electron Microscopy (SEM) and Focused Ion Beam (FIB) in one machine, able to assist deposition of materials with nanometre precision. In this work, the methodology of fabrication of metallic nanocontacts to ...

2006-07-01

80

Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates  

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the ...

81

Semiconductor properties and protective role of passive films of iron base alloys  

Energy Technology Data Exchange (ETDEWEB)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the ...

2007-01-15

82

Semiconductor properties and protective role of passive films of iron base alloys  

International Nuclear Information System (INIS)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other ...

2007-01-01

83

Properties of the passive films on cold worked stainless steels in conditions of susceptibility to stress corrosion cracking; Proprietes des couches passives formees sur les aciers inoxydables ecrouis dans des conditions de susceptibilite a la corrosion sous contrainte  

Energy Technology Data Exchange (ETDEWEB)

Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)

2004-06-01

84

Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique  

Science.gov (United States)

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

1997-09-01

85

Hall mobility minimum of temperature dependence in polycrystalline silicon  

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

1998-01-01

86

Continuous wave operation (77 K) of yellow (583. 6 nm) emitting AlGaInP double heterostructure laser diodes  

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

1986-03-03

92

Single-event burnout of power MOSFET devices for satellite application  

International Nuclear Information System (INIS)

Single-event burnout (SEB) sensitivity was tested for power MOSFET devices, JTMCS081 and JTMCS062, which were made in Institute of Microelectronics, Chinese Academy of Sciences, using californium-252 simulation source. SEB voltage threshold was found for devices under test (DUT). It is helpful for engineers to choose devices used in satellites. (authors)

2008-12-01

94

Power fluidics for ventilation control  

International Nuclear Information System (INIS)

... amplification exhaust systems fluidic control devices gloveboxes pressure

1984-11-28

95

OPTIMIZATION OF STOCHASTIC FINITE STATE SYSTEMS.  

Science.gov (United States)

... in the terminal state and ... Descriptors : (*OPTIMIZATION, *STOCHASTIC PROCESSES), (*INPUT ... DEVICES, OPTIMIZATION), QUEUEING THEORY ...

1966-04-20

96

Newly developed control and stop valves  

International Nuclear Information System (INIS)

... bwr type reactors closures fluidic control devices operation performance pwr

100

Integrated bistable optical device using Mach-Zehnder interferometric optical waveguide  

Science.gov (United States)

An integrated mirrorless bistable optical device based on the Mach-Zehnder interferometric optical switch has been proposed and demonstrated experimentally using a Ti:LiNbO3 waveguide. The resulting device is capable of combining more than two of them to realize multifunctional optical devices such as optical multivibrators.

1979-05-01

102

GaInP/GaAs tandem concentrator cells  

Energy Technology Data Exchange (ETDEWEB)

We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.

1994-06-30

103

Fluidic programmer for nuclear engine application  

International Nuclear Information System (INIS)

... fluidic control devices performance reactor control systems space propulsion

104

Flow deflector for nuclear fuel element assemblies  

International Nuclear Information System (INIS)

... coolants departure nucleate boiling fluid flow fluidic control devices fuel

108

Computer simulation and radiation hardening of power devices to protect against failures induced by heavy ions  

International Nuclear Information System (INIS)

Power devices such as MOSFETSs and IGBTs, include parasitic structures that can give rise to destructive failures such as breakdown and latch-up. To determine a suitable strategy for device radiation hardening, simulation software like MEDICI-2D can be used to model the effects of technological modifications and device parameters that are difficult to measure experimentally. (authors).

109

Centering device  

Energy Technology Data Exchange (ETDEWEB)

A centering device for casing tubings is proposed. It includes a housing, collar made of copper linings, return springs and pusher with centering pins placed in it. In order to simplify the design of the centering device it is equipped with levers installed on the pusher rod and connected by hinges to one another. The centering device assures coaxial placement of tubes over the mouth of wells and installation of butt joints during welding of tubes.

1980-03-15

111

An architecture for device independent interfacing  

Energy Technology Data Exchange (ETDEWEB)

Achieving device independence for software applications is required for all but a small number of critical real time applications. Device independence is achieved by establishing protocols and building protocol interpreters for the specific devices. Data structures containing pointers to functions provide a flexible architecture for implementing protocol translation. 3 refs., 5 figs.

1990-01-01

115

Evaluation of performance of MPPT devices in PV systems with storage batteries  

Energy Technology Data Exchange (ETDEWEB)

In the PV system with storage batteries, as a maximum power point tracking (MPPT) device is used to enhance battery charging, the enhancement must be greater than the internal loss of the device itself, or there will be no net gain at all. To evaluate the MPPT device benefits under different climate, the theoretical calculation models have been constructed. By simulation, a comparative study between two types of PV charge controllers with and without a MPPT device under different atmospheric conditions was presented. The comparison was made by means of the energy production obtained from the PV generator of each system. The climatic conditions of Beijing and Guangzhou in China have been regarded. From the results obtained it can be concluded that the effectiveness of the MPPT device in Guangzhou is not very obvious, however the MPPT device did greatly enhance ...

2007-07-15

116

Robotics and teleoperator-controlled devices  

International Nuclear Information System (INIS)

This paper presents a rationale for and a summary of tasks and missions to which mobile and stationary robots and other teleoperator-controlled devices could be assigned in response to the accidental release of radioactive and other hazardous/toxic materials to the environment. Many of these vehicles and devices currently support operation and maintenance of nuclear power plants and other nuclear industry facilities. This paper also discusses specific missions for these devices at the Three Mile Island and Chernobyl nuclear power plant sites at the time of the accidents. Also discussed is the status of devices under development for future applications, as well as research on robotics.

117

Medical Devices; Managing the Mismatch An Outcome of the Priority Medical Devices Project  

CERN Document Server

Choosing a medical device is complex and requires a transparent process based on reason, evidence and assessment of prioritized public health needs. Poor choices lead to inappropriate use or non-use of medical devices and a waste of resources.This report suggests how an agenda to improve access to appropriate medical devices could be devised from applying the crucial 4 components - Availability, Accessibility, Appropriateness, and Affordability, to the 15 global high-burden diseases and some cross-cutting issues. The results of this exercise suggest several areas of research necessary to help

2010-01-01

118

Decommissioning and dismantling. Examination of the radiation hardening of electronic components. Final report  

International Nuclear Information System (INIS)

Remote-controlled handling systems are required for work to be done in the decommissioning and dismantling of nuclear facilities. These systems are equipped with electronic devices suitable for use in working environments affected by ionizing radiation. The publication explains the step-wise progress achieved for improving the radiation resistance of electronic devices with the example of a four-quadrant controlling device for the motors of a manipulator. The radiation resistance of the device could be enhanced to radiation energies of 5.500 Gy. This means that a manipulator vehicle equipped with this controlling device can take up to approx. 15 kGy all in all, taking into account its own shielding properties. (DG).

119

CoSi_2 nanostructures by writing FIB ion beam synthesis  

International Nuclear Information System (INIS)

A mass separated focused ion beam (FIB) is a very useful tool to fabricate nanostructures by writing implantation within an ion beam synthesis process. In these investigations the IMSA-OrsayPhysics FIB, equipped with a Co_3_6Nd_6_4 alloy liquid metal ion source, was applied. Si(100) and (111) wafers were implanted with 60 keV Co"+"+ ions in the dose range of 2 . 10"1"6 to 2 . 10"1"7 cm"-"2. Implantation parameters were investigated, like pixel dwell time, relaxation time (time between two cycles), dose rate as well as the pixel overlapping factor. The subsequent annealing was done in a two step process, namely 600 deg. C for 60 min and 1000 deg. C for 30 min in a N_2 ambient. The results obtained by SEM investigations in terms of continuous nanowire structures following the direction and interrupted CoSi_2 pattern in the direction show a clear dependence on the time scale as well as the scanning mode of the irradiation. Structure sizes as small as 10 nm are ...

2006-07-01

120

In-situ growth of porous alumino-silicates and fabrication of nano-porous membranes  

Science.gov (United States)

Feasibility of depositing continuous films of nano-porous alumino-silicates, primarily zeolites and MCM-41, on metallic and non-metallic substrates was examined with an aim to develop membranes for separation of gaseous mixtures and also for application as hydrogen storage material. Mesoporous silica was deposited in-side the pores of these nano-porous disks with an aim to develop membranes for selective separations. Our study involves supported zeolite film growth on substrates using in-situ hydrothermal synthesis. Faujasite, Silicalite and Mesoporous silica have been grown on various metallic and non-metallic supports. Metallic substrates used for film growth included anodized titanium, sodium hydroxide treated Titanium, Anodized aluminum, and sintered copper. A non-metallic substrate used was nano-porous aluminum oxide. Zeolite film growth was characterized using Scanning Electron Microscope (AMRAY 1820) and High Resolution Transmission electron microscope. Silicalite was found to ...

2009-01-01

121

The difference between standard and average efficiencies of multijunction compared with single-junction concentrator cells  

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

1991-05-01

122

Basic mechanisms of radiation effects in the natural space radiation environment  

Energy Technology Data Exchange (ETDEWEB)

Four general topics are covered in respect to the natural space radiation environment: (1) particles trapped by the earth`s magnetic field, (2) cosmic rays, (3) radiation environment inside a spacecraft, (4) laboratory radiation sources. The interaction of radiation with materials is described by ionization effects and displacement effects. Total-dose effects on MOS devices is discussed with respect to: measurement techniques, electron-hole yield, hole transport, oxide traps, interface traps, border traps, device properties, case studies and special concerns for commercial devices. Other device types considered for total-dose effects are SOI devices and nitrided oxide devices. Lastly, single event phenomena are discussed with respect to charge collection mechanisms and hard errors. (GHH)

1994-06-01

123

Semiconducting properties of passive films formed on stainless steels: Influence of the alloying elements  

Energy Technology Data Exchange (ETDEWEB)

Passive films formed on stainless steels in a borate buffer solution (pH 9.2) have been investigated by capacitance measurements and photoelectrochemistry. The study was carried out on films formed on AISI type 304 and 316 stainless steels and high purity alloys with differing chromium, nickel, and molybdenum contents. Complementary research by Auger analysis shows that the passive films are composed essentially of an inner chromium region in contact with the metallic substrate and an outer iron oxide region developed at the film/electrolyte interface. The semiconducting properties of the passive films are determined by those of the constituent chromium and iron oxides which are of p-type and n-type, respectively. Thus the influence of the alloying elements on the semiconducting properties of the passive films is explained by changes in the electronic structure of each of these two oxide regions.

1998-11-01

124

Material-induced shunts in multicrystalline silicon solar cells  

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-15

125

Material-induced shunts in multicrystalline silicon solar cells  

International Nuclear Information System (INIS)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-01

126

Material-induced shunts in multicrystalline silicon solar cells  

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-01-01

127

Improved Output Power of GaN-Based Vertical Light Emitting Diodes Fabricated with Current Blocking Region Formed by O2 Plasma Treatment  

Science.gov (United States)

We report on the formation of current blocking regions by O2 plasma treatment to reduce current crowding at the active region above the p-type electrodes of GaN-based vertical light emitting diodes (LEDs). The forward voltage and reverse current (at -5 V) of the plasma-treated LEDs slightly increase with increasing aging time. The output power (at 350 mA) of the plasma-treated LEDs is enhanced by 26% as compared to that of reference LEDs and is comparable to that of LEDs with SiO2 current blocking layers. It is shown that the output power (at 700 mA) of the plasma-treated LEDs is degraded by less than 2% of the initial value after 500 h.

2011-07-01

128

Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis  

Energy Technology Data Exchange (ETDEWEB)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

2006-06-29

129

Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis  

International Nuclear Information System (INIS)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

2006-06-29

130

Chemical composition and electronic structure of passive films formed on Alloy 600 in acidic solution  

Energy Technology Data Exchange (ETDEWEB)

The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

2008-03-15

131

Chemical composition and electronic structure of passive films formed on Alloy 600 in acidic solution  

International Nuclear Information System (INIS)

The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

2008-03-01

132

Verification of MLC based real-time tumor tracking using an electronic portal imaging device  

UK PubMed Central (United Kingdom)

Purpose: The authors have developed a novel technique using an electronic portal imaging device (EPID) to verify the geometrical accuracy of delivery of dose-rate-regulated tracking (DRRT)....Full Text Available

2010-06-01

133

Quantum computing with solids  

Energy Technology Data Exchange (ETDEWEB)

Science and technology could be revolutionized by quantum computers, but building them from solid-state devices will not be easy. Robert W Keyes of IBM's research division outlines the challenges in scaling up the technology from lab experiments to practical devices. (U.K.)

2002-08-01

134

Optical Science And Engineering: New Directions And Opportunities In Research And Education  

Science.gov (United States)

... Biomedical Engineering Optical and Photonic Materials and Devices Fundamental Optical Interactions ... of Texas Medical School OPTICAL AND PHOTONIC MATERIALS AND DEVICES Gary Bjorklund, IBM, Chair Nan ...

135

Improvements in or relating to fluid operated devices for moving articles  

International Nuclear Information System (INIS)

The patent relates to fluid operated devices for moving articles. The machine may be used in filling a nuclear fuel canister with fuel pellets where there is a tendency for out of squareness of pellets to produce a jam condition readily cleared by a modest force. (U.K.).

1984-09-27

136

Foam Filled Muzzle Blast Reducing Device.  

Science.gov (United States)

A device for reducing the muzzle blast and flash from large caliber guns is disclosed. A container having a plurality of internal chambers and baffle plates filled with an aqueous foam is mounted to the muzzle of the gun barrel. The foam and chambers co-o...

1982-01-01

137

Development of a Coke-Free Cupola Furnace. Energy Conserving Shaft Furnace for Iron Materials. Final Report.  

Science.gov (United States)

Coke-fired cupola furnaces were improved and made suitable for the production of high-quality casting melts by numerous additional devices. Moreover, they were equipped with environmental protection systems with numerous dust separation devices and afterb...

1986-01-01

138

Demographic Profile of Older Adults Using Wheeled Mobility Devices  

UK PubMed Central (United Kingdom)

The purpose of this study was to determine whether the use of wheeled mobility devices differed with respect to age, gender, residential setting, and health-related factors among older adults. A total...Full Text Available

139

DISPERSION TOLERANCE CALCULATION FOR NSLS-II.  

Energy Technology Data Exchange (ETDEWEB)

In this paper we discuss the effect on the emittance of the residual dispersion in the insertion devices. The dispersion in the straights could be generated by the lattice error, trim dipole, and insertion device. The effect on the emittance is examined, and the dispersion tolerances are given for the NSLS-11.

2007-06-25

140

DESIGN MANUAL: SWIRL AND HELICAL BEND POLLUTION CONTROL DEVICES  

Science.gov (United States)

This design manual contains descriptions of design procedures and operating experience to date, including results obtained, for secondary flow pollution control devices. Two types of combined sewer overflow regulators are described: the swirl and the helical bend regulator/separa...

141

Biomechanical Issues in Endovascular Device Design  

UK PubMed Central (United Kingdom)

The biomechanical nature of the arterial system and its major disease states provides a series of challenges to treatment strategies. Endovascular device design objectives have mostly centered on short-term...Full Text Available

2009-02-01

142

A new resorbable device for ligation of blood vessels - A pilot study  

UK PubMed Central (United Kingdom)

BackgroundDuring surgery, controlled haemostasis to prevent blood loss is vital for a successful outcome. It can be difficult to ligate vessels located deep in the abdomen. A device...Full Text Available

143

40 CFR 63.321 - Definitions.  

Science.gov (United States)

...limited to, emission control devices, pumps, filters, muck cookers, stills, solvent tanks, solvent containers, water separators...facility that meets the conditions of § 63.320(g). Muck cooker means a device for heating perchloroethylene-laden...

2009-07-01

144

Thermal-physical analysis of low-radioactive thermonuclear plasma in the magnetic fusion device  

International Nuclear Information System (INIS)

... Union (INTAS), Brussels (Belgium) Science and Technology Center in Unkraine,

2006-09-11

145

Theoretical study on device efficiency of pulsed liquid jet pump  

International Nuclear Information System (INIS)

The influence of the main factors on device efficiency of pulsed liquid jet pump with gas-liquid piston is analysed, the theoretical equation and its time-averaged solution of pulsed liquid jet pump device efficiency are derived. The theoretical and experimental results show that the efficiency of transmission of energy and mass to use pulsed jet is greatly raised, compared with steady jet, in the same device of liquid jet pump. The calculating results of time-averaged efficiency of pulsed liquid jet pump are approximately in agreement with the experimental results in our and foreign countries

2001-03-01

146

The application of advanced techniques for complex focused-ion-beam device modification  

Energy Technology Data Exchange (ETDEWEB)

Advanced techniques for focused-ion-beam (FIB) device modification have been developed for complex, multistep modifications to circuitry on planar chip technology. Applying gas-assisted etching (GAE) techniques for high-aspect-ratio milling and the selective milling of both conductive and insulating films enhances process latitude. Localized ion-beam-induced deposition of an insulating film provides reconstructive capability in previously modified areas. The application of both techniques for complex device modification on VSLI devices fabricated with CMOS process technology is reviewed. (UK).

1996-12-31

147

THIN FILM ACOUSTO-OPTIC DEVICES - REVIEW AND ...  

Science.gov (United States)

... Abstract : MANY THIN FILM ACOUSTO-OPTIC INTERACTION EXPERIMENTS FOR ... CONVERTERS, AND FOR FAST SWITCHES HAVE BEEN ...

1974-11-01

148

Radiation dose in computerized tomography  

International Nuclear Information System (INIS)

Dosimetric studies in 80 patients examined with the tomographic device 'Somatom' are reported. The gonad doses are compared to those of conventional radiographic techniques.

149

Plasma diagnostics in the optical and X-ray regions on the plasma focus device PF-4 (TULIP)  

International Nuclear Information System (INIS)

... Union (INTAS), Brussels (Belgium) Science and Technology Center in Unkraine,

2006-09-11

150

NASA TECH BRIEF  

Science.gov (United States)

Magnetic Forming Studies. The use of transient high magnetic-field devices has made possible the generation of very large accurately ...

151

Magnetic Tape Pulse Width to Digital Convertor.  

Science.gov (United States)

... This is achieved by the use of a unique logic circuit employing a plurality of flip-flop devices, multivibrators and AND gates. ...

1976-12-07

152

Improvement of assessment methodology for fluid flow characteristics of passive flow control device  

International Nuclear Information System (INIS)

The objective of this study is to establish evaluation and verification guideline for the APR 1400 and to investigate the thermal-hydraulic characteristics for fluidic device is analyzed using FLUENT. The scope and major results of research are flow characteristics for fluidic device. In this study, three-dimensional numerical model for fluidic device is developed adequately for, and results are compared with experimental data performed by VAPER (VAlve Performance Evaluation test Rig) in KAERI with an aim to verify numerical simulation. In addition, the parametric study has also carried out to investigate the effect of major parameters such as velocity and pressure inside FD chamber.

2002-10-01

153

Improved Usability of Locomotion Devices Using Human ...  

Science.gov (United States)

... increasing photorealism. Furthermore, developments in audio technology continue to increase the spatial awareness of users in VEs. ...

2009-03-01

154

Growth, Characterization and Device Development in ...  

Science.gov (United States)

... eV. In some instances the spontaneous radiation from a free electron laser system was employed to obtain images. The ...

1998-03-01

155

GaInP/GaAs monolithic tandem concentrator cells  

Energy Technology Data Exchange (ETDEWEB)

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

1994-12-31

156

Fluidic shut-down system for a nuclear reactor  

International Nuclear Information System (INIS)

... fluid poison control fluidic control devices reactors scram scram rods control

158

Dictionary of Technical Terms for Aerospace Use - S  

Science.gov (United States)

sabot: A device fitted around or in back of a projectile in a gun barrel or launching tube to support or protect the projectile or to prevent the escape of ...

159

Creation of a Data Base on Energetic Materials  

Science.gov (United States)

... initiation) Pressed e Combustible Cartridge Cases Quantity-Distance Table ... Combustible Cartridge Cases, and Electrically Exploded Devices in ...

1987-08-10

160

Correlation-based spectral clustering for flexible process monitoring  

British Library Electronic Table of Contents (United Kingdom)

The individuality of production devices should be taken into account when statistical models are designed for parallelized devices. In the present work, a new clustering method, referred to as NC-spectral clustering, is proposed for discriminating the individuality of production devices. The key idea is to classify samples according to the differences of the correlation among measured variables, since the individuality of production devices is expressed by the correlation. In the proposed NC-spectral clustering, the nearest correlation (NC) method and spectral clustering are integrated. The NC method generates the weighted graph that expresses the correlation-based similarities between samples, and the constructed graph is partitioned by spectral clustering. A new statistical process monit...

2011-01-01

161

Slurry intake device  

Energy Technology Data Exchange (ETDEWEB)

A slurry intake device is proposed which contains an inlet sleeve, housing with grating installed with the discharge end in the zone of the slurry outlet, and hinged deflector. In order to conserve the clay mud, it is equipped with a tie rod and two-arm lever which is kinematically linked to the deflector and the grating. It is installed by hinges in relation to the housing and the latter is attached by hinges to the inlet sleeve. The deflector is arranged in the zone of slurry outlet. The device is distinguished by the fact that the deflector is equipped with a cantilever on which a fixable weight is attached.

1982-01-01

162

Physical therapy applications of MR fluids and intelligent control  

Science.gov (United States)

Resistance exercise has been widely reported to have positive rehabilitation effects for patients with neuromuscular and orthopaedic conditions. This paper presents an optimal design of magneto-rheological fluid dampers for variable resistance exercise devices. Adaptive controls for regulating the resistive force or torque of the device as well as the joint motion are presented. The device provides both isometric and isokinetic strength training for various human joints.

2005-05-01

163

Optimizing semiconductor devices by self-organizing particle swarm  

CERN Document Server

A self-organizing particle swarm is presented. It works in dissipative state by employing the small inertia weight, according to experimental analysis on a simplified model, which with fast convergence. Then by recognizing and replacing inactive particles according to the process deviation information of device parameters, the fluctuation is introduced so as to driving the irreversible evolution process with better fitness. The testing on benchmark functions and an application example for device optimization with designed fitness function indicates it improves the performance effectively.

2005-01-01

164

Method and apparatus for detecting explosives  

Energy Technology Data Exchange (ETDEWEB)

A method and apparatus is provided for detecting explosives by thermal imaging. The explosive material is subjected to a high energy wave which can be either a sound wave or an electromagnetic wave which will initiate a chemical reaction in the explosive material which chemical reaction will produce heat. The heat is then sensed by a thermal imaging device which will provide a signal to a computing device which will alert a user of the apparatus to the possibility of an explosive device being present.

2011-05-10

165

Measurement of audible noise from transmission lines  

Energy Technology Data Exchange (ETDEWEB)

The audible noise produced by corona on high-voltage transmission lines has several characteristics that differentiate it from other community noises. Transmission line noise is quite broadband and has a significant high frequency content. Special instrumentation designed to measure this type of noise pollution is described. All measuring systems have the same three basic elements: a transducer, a processing device, and an output device. Recorders, microphone devices, frequency analyzers, and meteorological instrumentation are discussed.

1981-03-01

166

Final Report: Planetary Instrument Definition and Design Program (PIDDP) Support Project  

Energy Technology Data Exchange (ETDEWEB)

The results of Sandia National Laboratories' participation in the NASA Planetary Definition and Design Program are summarized. Areas reported include the characterization of large area cadmium zinc telluride spectrometers and the application of simulation techniques to the prediction of device performance. Also investigated was the response of mercuric iodide devices in the region from 1 to 100 KeV. A literature study to determine the status or radiation damage measurements in room temperature semiconductor devices is also reported.

1999-03-01

167

Dynamics of electrooptic bistable devices with delayed feedback  

Science.gov (United States)

The dynamic behavior of electrooptic bistable devices with delayed feedback is investigated theoretically and experimentally. The operation principle of the system is analyzed by the method of iterated maps. Stable, bistable, periodic, higher periodic, and chaotic solutions are discussed and realized experimentally by using an integrated Mach-Zehnder interferometer on LiNbO3 as a basic nonlinear element. Taking into account the periodic modulator characteristic, the application of this device as a simple and fast bistable and monostable multivibrator is demonstrated. In addition, the synchronization properties of the astable multivibrator are investigated.

1982-12-01

168

Device for advancing the base of a stoping unit  

Energy Technology Data Exchange (ETDEWEB)

The purpose of the invention is to increase reliability in the operation of the device for advancing the base of a stoping unit. This is achieved because the device includes alternation hydraulic jacks of advance and control connected by hinges between themselves by the sections of the base and equipped with hydraulic locks, distributors of the hydraulic jacks of advance. In this case the hydraulic locks connected to the hydraulic jacks of control are doubled and connected to the distributors of the neighboring sections through reverse valves.

1980-12-13

169

Device for additional compaction of crushed coal loaded into a coke oven  

Energy Technology Data Exchange (ETDEWEB)

This is a patent for a device to increase compaction of the loaded batch in a coking chamber that assures a balanced compaction of the batch from the upper to the bottom layer. The leveling rod has a device on the external end that causes the rod to shift vertically and bring pressure on the material and the pressing attachment. Opposite the loading hoppers of the coking chambers there are guides that ensure the rod will be sunk perpendicularly into the loaded material.

1980-03-26

170

Development of heavy-ion irradiation technique for single-event in semiconductor devices  

Energy Technology Data Exchange (ETDEWEB)

Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

1997-03-01

171

Container for the long-term storage of radioactive substances with a lid tightening device  

International Nuclear Information System (INIS)

The invention concerns a container for the long term storage of irradiated nuclear reactor fuel elements, which consists mainly of a basic body, at least one lid and an outside ring shaped lid tightening device, which acts on the basic body and the lid and holds the contact surface of the lid tight against the contact surface of the basic body, where the basic body, lid and the lid tightening device consist of corrosion-proof materials. (orig./HP).

1983-09-24

172

Applying fluidics to reactor safety and reprocessing  

International Nuclear Information System (INIS)

Large scale flows of liquids can be controlled by using power fluidic devices that harness the hydrodynamic properties of liquids rather than use moving parts. Included among the fluidic devices considered are fluidic pumps, reverse flow diverters, fluidic diodes and vortex amplifiers. These devices are of potential use in the nuclear industry, particularly in reprocessing. (U.K.).

173

A device for assemblying a support string for an offshore drilling rig  

Energy Technology Data Exchange (ETDEWEB)

The purpose of the invention is to simplify assembly and to reduce labor intensity. This is achieved by the fact that the assembly shaft is positioned in a hawser, while its wall which is turned towards the body of the installation is combined with the hawser wall, where a U shaped opening is made in the wall of the assembly shaft, along the edges of which there is a hermetically sealing device, while the bottom of the body of the offshore drilling rig is equipped with a rigid insert attached with the capability of adjoining it with the hermetically sealing device.

1983-01-01

174

Growth and electronic properties of two-dimensional systems on (110) oriented GaAs  

Energy Technology Data Exchange (ETDEWEB)

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type ...

2005-07-01

175

Effects of powder particle size on thermoelectric properties of n- and P-Bi2Te3; N- oyobi P-Bi2Te3 no netsuden tokusei eno funmatsu ryudo no eikyo  

Energy Technology Data Exchange (ETDEWEB)

The effect of powder particle sizes of n- and p-Bi2Te3 on the thermoelectric properties has been studied. The powder was formed from the each ingot and sieve into <63, 63-90 and 90-150{mu}m for p-type, and <355 and >355 {mu}m for n-type. Those powders are pressed followed by CIP, then sinterd at 773K for S. Effects of CIP on the densities were not so large such as 1-4% depending on the powder sizes. The Setback coefficients and electric conductivities for p-type were 110{mu}V/K and 0.8{times}10{sup 2}ohm{sup -1}m{sup -1} at 333K, while 18O{mu}V/K and 2.0{times}10{sup 4}ohm{sup -1}m{sup -l} for n-type, respectively. The thermal conductivity for n-type was 0.7W/mK leading to the figure of merit of 2.1{times}10{sup -3}(/K). The hybrid texture of the suitable amount of smaller and larger grains has a possibility of an improvement for thermoelectric properties. 10 refs., 5 figs., 5 tabs.

1995-07-15

176

Real time neutron radiography using a Lixi neutron imaging device  

Energy Technology Data Exchange (ETDEWEB)

A real time neutron radiography system has been developed at the University of Michigan Phoenix Memorial Laboratory (PML) and has recently been used to test the imaging capabilities of a neutron imaging device developed by Lixi, Inc. of Downers Grove, Illinois. This device uses an input phosphor that is high in gadolinium to generate a light image which is then sent through an intensifier stage to provide images that can be viewed by eye, video camera, or standard 35 mm camera. It was determined that this device provides images of much higher resolution and sensitivity than those obtained with the imaging system currently being used at PML. Using computerized image enhancement techniques, the images obtained with the Lixi neutron imaging device can then be further enhanced or processed to obtain quantitative information on the object being imaged.

1986-01-15

177

Real time neutron radiography using a Lixi neutron imaging device  

International Nuclear Information System (INIS)

A real time neutron radiography system has been developed at the University of Michigan Phoenix Memorial Laboratory (PML) and has recently been used to test the imaging capabilities of a neutron imaging device developed by Lixi, Inc. of Downers Grove, Ill. This device uses an input phosphor that is high in gadolinium to generate a light image which is then sent through an intensifier stage to provide images that can be viewed by eye, video camera, or standard 35 mm camera. It was determined that this device provides images of much higher resolution and sensitivity than those obtained with the imaging system currently being used at PML. Using computerized image enhancement techniques, the images obtained with the Lixi neutron imaging device can then be further enhanced or processed to obtain quantitative information on the object being imaged. (orig.).

1986-01-01

178

NEXAFS microscopy of polymeric materials: Successes and challenges encountered when characterizing organic devices  

Energy Technology Data Exchange (ETDEWEB)

We summarize recent developments in x-ray microscopy of polymers by focusing on the characterization of organic electronic devices. The quantitative compositions of model polymer blends have been mapped at a resolution of {approx}35 nm. Since it could be inferred that these devices have structures smaller than 35 nm, quantitative compositional mapping at length scales below the present resolution limit of x-ray microscopy is required. Organic devices thus serve to both highlight the success of NEXAFS microscopy to date, but to also outline the very real need for higher spatial resolution. New approaches to create improved optics or different acquisition modalities are required if x-ray microscopy is to make sustained contributions to such an important area of research as organic devices.

2009-09-01

179

Method and device for identifying different species of honeybees  

Energy Technology Data Exchange (ETDEWEB)

A method and device have been provided for distinguishing Africanized honeybees from European honeybees. The method is based on the discovery of a distinct difference in the acoustical signatures of these two species of honeybees in flight. The European honeybee signature has a fundamental power peak in the 210 to 240 Hz range while the Africanized honeybee signature has a fundamental power peak in the 260 to 290 Hz range. The acoustic signal produced by honeybees is analyzed by means of a detecting device to quickly determine the honeybee species through the detection of the presence of frequencies in one of these distinct ranges. The device includes a microphone for acoustical signal detection which feeds the detected signal into a frequency analyzer which is designed to detect the presence of either of the known fundamental wingbeat frequencies unique to the acoustical signatures of these species as an indication of the ...

1989-01-01

180

Light weight underground pipe or cable installing device  

Energy Technology Data Exchange (ETDEWEB)

This invention pertains to a light weight underground pipe or cable installing device adapted for use in a narrow and deep operating trench. More particularly this underground pipe installing device employs a pair of laterally movable gates positioned adjacent the bottom of the operating trench where the earth is more solid to securely clamp the device in the operating trench to enable it to withstand the forces exerted as the actuating rod is forced through the earth from the so-called operating trench to the target trench. To accommodate the laterally movable gates positioned adjacent the bottom of the narrow pipe installing device, a pair of top operated double-acting rod clamping jaws, operated by a hydraulic cylinder positioned above the actuating rod are employed.

1985-01-08

181

Coherently pulsed laser source  

Energy Technology Data Exchange (ETDEWEB)

An electronically controllable apparatus is described which modulates a continuous wave laser beam so as to produce an output beam consisting of coherent ''pulses'' that are electronically controllable as to both pulse repetition rate and pulse width. The apparatus includes two acoustic devices positioned so that the laser beam passes through them in sequence, and apparatus or for passing sound waves through the devices to frequency shift the laser radiation as well as to diffract it. Each acoustic device such as generates sound waves containing a group of frequencies which result in spaced pulses. The spreading of a laser beam at which emanates from the first acoustic device is countered by the second acoustic device to produce a collimated, coherently pulsed, laser beam.

1982-06-01

182

Universal remote access infrastructure for embedded systems; Universelle Fernzugriff-Infrastruktur fuer eingebettete Systeme  

Energy Technology Data Exchange (ETDEWEB)

This article describes a flexible and extensible infrastructure for applying Web-Technologies to embedded systems.The presented approach develops a Three-level-Architecture consisting of the embedded system, the universal Remote-Access-Server and the Remote-Access-Client. A system-spanning general interface allows the binding of embedded systems in order to access their process data. Additionally, this procedure facilitates a flexible processing of the device data, so that it is ready to be used by different control devices. To ensure flexibility - connecting different devices on the one side and providing information for different clients like PC, PDA or mobile phone on the other side - a new XML-based description language (Service Description Markup Language - SDML) is introduced. The SDML documents contain information about connected embedded systems, reusable device data and the presentation ...

2005-07-01

183

Some medical applications of thermomechanically treated titanium nickelide  

Energy Technology Data Exchange (ETDEWEB)

An original device and a method of its application for restoring of the function of relatively incompetent valves (both patented) are elaborated. Application of the new device allows to lower the difficulty of surgical treatment, to decrease the duration of operation and post-operative period. The long-term results of six-year long experience of its application are presented. The patients examination after 2,5-3,0-year post-operation period shows perfect vein valve correction. A device for stone extraction from tubular organs (patented) fabricated with titanium nickelide superelastic alloy is presented. The new suggested design is free of the drawback inherent in the previous one. The working element of the device is formed as a truncated cone or a truncated cone coaxial with the cylinder (the previous design was formed as a full cone) that prevents overstraining and residual strain accumulation during ...

2001-11-01

184

Transversal bearing device for a nuclear reactor component, transversal bearing device for a PWR steam generator and its adjusting process  

International Nuclear Information System (INIS)

The lateral bearing device is made of 7 lateral supports, each positioned to allow the displacement of the steam generator due to thermal or seismic effects. Each support includes a buffer plate that can be positioned on the steam generator using a position control assembly. This control assembly consists of a screw jack arrangement where the nut is fastened via an energy absorbing layer to a footplate that is fixed to the concrete wall of the steam generator enclosure. 4 figs.

1992-03-31

185

The use of combustible metals in explosive incendiary devices  

Energy Technology Data Exchange (ETDEWEB)

We have investigated tailoring damage effects of explosive devices by addition of unconventional materials, specifically combustible metals. Initial small-scale as well as full-scale testing has been performed. The explosives functioned to disperse and ignite these materials. Incendiary, enhanced-blast, and fragment-damage effect have been identified. These types of effects can be used to extend the damage done to hardened facilities. In other cases it is desirable to disable the target with minimal collateral damage. Use of unconventional materials allows the capability to tailor the damage and effects of explosive devices for these and other applications. Current work includes testing of an incendiary warhead for a penetrator.

1996-08-01

186

Simulation of High Power Deposition on Target Materials: Applications in Magnetic, Inertial Fusion, and High Power Plasma Lithography Devices  

International Nuclear Information System (INIS)

High power and particle deposition on target materials are encountered in many applications including magnetic and inertial fusion devices, nuclear and high energy physics applications, and laser and discharge produced plasma devices. Surface and structural damage to plasma-facing components due to the frequent loss of plasma confinement remains a serious problem for the Tokamak reactor concept. The deposited plasma energy causes significant surface erosion, possible structural failure, and frequent plasma contamination.

2006-01-01

187

SEU hardening of field programmable gate arrays (EPGAS) for space applications and device characterization  

International Nuclear Information System (INIS)

Field Programmable Gate Arrays (FPGAs) are being used in space applications because of attractive attributes: good density, moderate speed, low cost, and quick turn-around time. However, these devices are susceptible to Single Event Upsets (SEUs). An approach using triple modular redundancy (TMR) and feedback was developed for flip-flop hardening in these devices. Test data showed excellent results for this circuit topology. Total dose and Single Event Effect (SEE) testing have been performed on recently released technologies. Failures are analyzed and test methodology is discussed.

1994-07-18

188

PLZT electrooptic shutters: applications  

Science.gov (United States)

Advances in the development of several electrooptic shutter devices utilizing the quadratic electrooptic effect of lead lanthanum zirconate titanate (PLZT) ceramic wafers are described. Aperture sizes utilized in these PLZT devices ranged from 25 ..mu..m to 0.25 m. Practical applications of the shutters discussed in this paper include eye protection in military and industrial applications, a goggle-type device with dual synchronously operated PLZT shutters for use in a stereoscopic three-dimensional TV display, an electrically controlled variable density filter for use with vidicon tubes, a large-aperture photographic shutter for image motion compensation cameras, and a page composer for use in a holographic memory system.

1975-08-01

189

Optical properties of proton-irradiated polymers  

Energy Technology Data Exchange (ETDEWEB)

Recently, organic semiconducting materials have gained a broad interest due to their potential for organic electronic devices such as organic light emitting diode (OLED), organic photovoltaic devices and organic field-effect transistors (OFETs). Optical properties of organic semiconducting materials are important for practical application. For example, the power conversion efficiency of organic photovoltaic devices is mainly affected by absorption properties of organic materials. Proton irradiation is one of the efficient methods to change the optical properties of organic materials. In this paper, we investigate the changes of optical properties of various polymers using the proton irradiation.

2009-05-15

190

Observation of theoretical power saturation by the KHI free electron laser device  

International Nuclear Information System (INIS)

The saturation of free electron laser (FEL) output power by the KHI-FEL device was achieved on 3rd, October 2000 at the wavelength of 9.3 #mu#m. The FEL device has operated thereafter successfully in the wavelength region between 4.0 and 16.0 #mu#m. The macropulse average FEL power of 37.5 kW, which is the theoretical saturation level, has been obtained at the wavelength of 7.9 #mu#m. The net FEL gain was estimated to be 16%. (author)

2002-01-01

191

Mechanical variations of diffused plasma parameters in a double plasma device  

International Nuclear Information System (INIS)

Experimentally it is shown that a movable grounded metallic plate placed inside a multi-dipole magnetic cage can vary the diffused plasma parameters such as density, plasma potential and electron temperature. Plasma is solely produced in the source section of a double plasma device by a dc hot filament discharge and a low-density plasma is produced in the target section by local ionization of neutral gas by the high energetic electrons coming from the source section. A grounded movable stainless steel plate is inserted in the target section of the device. The floating potential of the plate also changes depending on the position of the plate inside the magnetic cage.

2007-06-21

192

Ionizing radiation hardening procedure of CCD's  

International Nuclear Information System (INIS)

The procedure of charge-coupled devices (CCD) are investigated by using MOS capacitors for enhancing their ionizing radiation tolerance. Authors have found that the gate oxidation temperature, thickness of SiO_2 gate insulator and high temperature processes after gate oxidation are crucial for determining the radiation tolerance of the devices, and proposed to decrease the thickness of gate insulator, perform gate oxidation at 1000 deg C by means of dry oxidation and minimize the number of high temperature procedure steps after gate oxidation. All stated above is a necessary preparation for priducing radiation hardened charge-coupled devices.

193

Experimental study of beam optics and energy recovery for high-energy electron cooling device  

International Nuclear Information System (INIS)

The feasibility of a high-energy electron cooling device has been studied through tests on a prototype of the electron device. The apparatus consists of a pulsed ((20-60) keV, 2#mu#s) electron gun, a drift region 1 m long and of a depressed collector for recovering the electron energy. Tests on beam optics and energy recovery have been performed, a high-energy recovery efficiency has been attained. Experimental results are discussed in this paper.

194

Device for increasing the decontamination factor in the treatment of radioactive waste water. Vorrichtung zur Erhoehung der Dekontaminationsfaktoren bei der Aufbereitung radioaktiver Abwaesser  

Energy Technology Data Exchange (ETDEWEB)

In the well-known devices for increasing the decontamination factor in the treatment of radioactive waste water by evaporation, which consist of narrowing devices with evaporator sump and condenser, droplets of liquid and solid particles are carried over from the breeder space, which are radioactive and therefore make the decontamination factor worse. Better results are obtained if one places a fibre bed filter between the evaporator sump and the condenser, preferably in a horizontal connecting pipe between the evaporator sump and the condenser.

1982-06-09

195

Design of a 2 T multipole wiggler insertion device for the SRS  

International Nuclear Information System (INIS)

Two new identical insertion devices have been designed for the Daresbury SRS. They are 2T permanent-magnet multipole wigglers that will provide high flux in the X-ray region. This paper describes the magnetic and mechanical design of the arrays of steel pole pieces and permanent-magnet blocks. Also given is the engineering design of the support structure that will cope with the very large forces present while maintaining high levels of precision in gap setting and parallelism. The engineering design has been fully assessed using finite-element techniques to predict the deflections of critical parts of the structure. These two devices are due to be installed into the SRS by the end of 1998.

1998-05-01

196

Application of the GEM shutdown device to the FFTF reactor  

Energy Technology Data Exchange (ETDEWEB)

A novel device called the gas expansion model (GEM) is being developed at the Hanford Engineering Development Laboratory for testing in the 400-MW(th) fast flux test facility (FFTF) reactor. Incorporation of the GEM into liquid-metal reactor designs is intended to measurably contribute to the achievement of inherent safety, by allowing the reactor to passively shut down even in the extremely remote (hypothetical) event of an unprotected (no scram) loss-of-flow accident. The purpose of this paper is to describe the GEM and present predictive analyses of the effectiveness of the device during unprotected loss-of-flow experiments in the FFTF.

1986-01-01

197

Application of the GEM shutdown device to the FFTF reactor  

International Nuclear Information System (INIS)

A novel device called the gas expansion model (GEM) is being developed at the Hanford Engineering Development Laboratory for testing in the 400-MW(th) fast flux test facility (FFTF) reactor. Incorporation of the GEM into liquid-metal reactor designs is intended to measurably contribute to the achievement of inherent safety, by allowing the reactor to passively shut down even in the extremely remote (hypothetical) event of an unprotected (no scram) loss-of-flow accident. The purpose of this paper is to describe the GEM and present predictive analyses of the effectiveness of the device during unprotected loss-of-flow experiments in the FFTF.

1986-11-16

198

Time Integrating Optical Signal Processing  

Science.gov (United States)

... The acousto-optic device have a 30 MHz 1 ... coherent systems including compact non-coherent optical ... a relatively simple phase switching approach. ...

1981-07-01

199

Surgeons' beliefs and perceptions about removal of orthopaedic implants  

UK PubMed Central (United Kingdom)

BackgroundThe routine removal of orthopaedic fixation devices after fracture healing remains an issue of debate. There are no evidence-based guidelines on this matter, and little...Full Text Available

200

Studies of Non-Linear Optical Effects for Agile Beam Steering  

Science.gov (United States)

... electronic feedback system' connected to a Q switch ... The use of acousto-optic (AO) beam steering devices for BMDO (SDI) applications is very ...

1993-11-01

201

Silicon solar cell assembly  

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

1979-01-01

202

Safety, Efficacy, and Performance of Implanted Recycled Cardiac Rhythm Management (CRM) Devices in Underprivileged Patients  

British Library Electronic Table of Contents (United Kingdom)

Introduction: Patients in underdeveloped nations have limited access to life-saving medical technology including cardiac rhythm management (CRM) devices. We evaluated alternative means to provide such technology to this patient population while assessing the safety and efficacy of such a practice. Methods: Patients in the United States with clinical indications for extraction of CRM devices were consented. Antemortem CRM devices were cleaned and sterilized following a protocol established at our institution. Surveillance in vitro cultures were performed for quality assurance. The functional status of pulse generators was tested with a pacing system analyzer to confirm at least 70% battery life. Most generators were transported, in person, to an implanting institution in Nicaragua. Recipien...

2011-01-01

203

STUDY OF FAILURE AND RELIABILITY IN MICROELECTRONIC DEVICES 3rd ...  

Science.gov (United States)

It is well known that the growth of purple plague is tempera- ture dependent. in Figure 2 which shows the progressive growth of purple ...

204

Reporting Problems to FDA  

Medline Plus

Enter Search terms A-Z Index Home Food Drugs Medical Devices Vaccines, Blood & Biologics Animal & Veterinary Cosmetics Radiation-Emitting Products Tobacco ...

205

Photonic Devices and Systems for Optical Signal Processing  

Science.gov (United States)

... lasers, model switched optical memory elements ... Optical RS flip flop, Acousto-optic switches. ... FLOP CIRCUITS, OPTICAL SWITCHING, NOR GATES ...

1993-08-01

206

Pathways for the degradation of organic photovoltaic P3HT:PCBM based devices  

Energy Technology Data Exchange (ETDEWEB)

We report on studies of device degradation in organic photovoltaic devices based on blends of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM). Since delamination, oxidation, and chemical interactions at the metal electrode/organic interface have long been posited as degradation pathways in organic electronic devices, we first investigated the stability of a variety of electrodes for devices stored in an inert, dark environment. Second, a set of experiments was designed to separate the effects at the metal/organic interface from the degradation of the active layer or the hole extraction interface. To do this, Ca/Al electrodes were deposited to complete half of a substrate's devices, and samples were left both under constant illumination and 10% illumination (10% duty cycle of 1 sun illumination) in a glovebox environment. After more than ...

2008-07-15

207

Materials for air turbines in wave power devices. A generic study  

Energy Technology Data Exchange (ETDEWEB)

Wave energy device teams have identified three varieties of air turbine as potentially applicable to wave energy devices. These are: conventional axial turbines; Wells, or self-rectifying, axial turbines and Francis turbines. This report examines the constructional requirements of these devices with regard to mechanical, environmental and manufacturing considerations. It is concluded that the major benefit of optimum material selection will be reduced manufacturing costs rather than enhanced turbine performance. A methodology of material selection has been established and candidate materials have been listed for the major components of each turbine type. Comparative costs for alternative materials are included, from which significant, potential economies have been identified. Recommendations are made aimed at achieving optimum material usage in the proposed turbines.

1981-01-01

208

Integration of Microdialysis Sampling and Microchip Electrophoresis with Electrochemical Detection  

UK PubMed Central (United Kingdom)

Here we describe the fabrication, optimization, and application of a microfluidic device that integrates microdialysis (MD) sampling, microchip electrophoresis (ME), and electrochemical detection...Full Text Available

2008-12-01

209

Integrated Optics Anisotropic Waveguides and Devices  

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

1989-04-30

210

IEEC - Home  

Science.gov (United States)

... Some of Our Clients General Electric Logo BAE Systems Logo IBM Logo Analog Devices Logo More Copyright © 2000 [IEEC]. All rights...

2011-08-02

211

High energy heavy ion irradiation in semiconductors  

Energy Technology Data Exchange (ETDEWEB)

Pd/n-Si and Pd/n-GaAs devices have been irradiated from high energy ({approx}100 MeV) heavy ions of Au{sup 7+} (gold) and Si{sup 7+} (silicon) to study the irradiation effects in these junction devices on semiconductor substrates. The devices have been characterized from I-V and C-V studies for electronic flow characterization. It has been found that the devices become high resistive on the irradiation and the substrates change the conductivity type from n- to p- on the irradiation of fluence of {approx}10{sup 12}-10{sup 13} ions/cm{sup 2}. The change in conductivity type has been understood as a result of creation of deep acceptors on the irradiation.

1999-07-02

213

Focused ion beam fabrication and properties of nanoscale Josephson junctions for sensors and other applications  

International Nuclear Information System (INIS)

The methods of superconducting device fabrication by lithography and multilevel processing usually require a number of processing steps with lithographic resolution and alignment adequate for the scale of the device be fabricated. As an alternative, the focused ion beam (FIB) microscope is increasingly being used directly to fabricate devices. A major advantage of using a FIB compared to other lithography methods is its flexibility and high resolution. It allows in-situ, milling (#propor to#5 nm at a beam current of 1 pA) to a variety of depths, and imaging (2 nm) of the sample. In this paper we describe our development of junction fabrication techniques using the FIB and their application in creating a range of potential sensor devices and quantum electronics applications. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2005-03-01

214

Fault Tolerant Considerations and Methods for Guidance and ...  

Science.gov (United States)

... Thus. thi, characteristic further buggeots, other things unchanging, that the more *multifunction" the ccna ;Ituent devices ari., t~he more efficienit the ...

1987-07-01

215

Explosives sensor  

Energy Technology Data Exchange (ETDEWEB)

A compact and supersensitive device that can rapidly detect minute trace vapors from concealed explosives has been developed by scientists at Oak Ridge National Laboratory (ORNL). The new explosives sensor can detect and chemically identify organic nitrogen-oxygen compounds which are the building blocks of explosives such as TNT, plastiques, and nitroglycerine. The device could be used to scan persons entering airport terminals, nuclear power plants, defense installations, or other sensitive locations, providing greater security against potential terrorism. This device works on a glow discharge principle, and is more specifically called an ''Atmospheric Sampling Glow Discharge Ionization'' (ASGDI) source. The new detector is a highly automated, miniaturized version of research mass spectrometers widely used to trace constituents of chemical mixtures. Detail of this ...

1987-01-01

216

Evaluation of Commercial Magnetic Descalers.  

Science.gov (United States)

With the increased costs of maintaining boilers and chillers entrepreneurs around the country have offered magnetic and similar devices to facilities as viable alternatives to their maintenance program. This report gives a brief history of some of the pre...

1984-01-01

217

Electrically Tunable Terahertz Quantum-Cascade Lasers  

Science.gov (United States)

Improved quantum-cascade lasers. (QCLs) are being developed as electri- ... These devices would supplant gas lasers as far-infrared sources. ...

218

Device for transporting loads, especially for belt driving stations in open pit mining  

Science.gov (United States)

A device is described for transporting loads, especially for moving belt driving stations in open pit mining operations with a propelling mechanism which for lifting a respective load is operable to move into a free space formed by the load with the ground. The device comprises a plurality of lifting mechanisms, by means of which, a lifting platform can be brought into engagement with a supporting surface of the load. The device comprises at least one supporting member which is so designed that it prevents the lifting platform from lifting off lifting mechanisms. Furthermore, means are provided which permit a turning of the lifting platform relative to the lifting mechanisms about a vertical axis which is arranged in a certain relationship to the propelling mechanism.

1977-07-19

219

Conjugate Heat Transfer Predictions of a Combustor ...  

Science.gov (United States)

... To maximise heat transfer rates, many heatshield designs make use of heat transfer augmentation devices such as large numbers of pin-fin ...

2003-03-01

220

Comparative evolution of various CCD image sensors hardening techniques with ionizing radiation  

International Nuclear Information System (INIS)

This paper reviews various techniques to harden Charged Coupled Device (CCD) sensors and the results after irradiation of three Thomson n buried channel CCDs having a different degree of hardening. It describes the major irradiation effects on CCD performances and it makes a comparison of the results between the different hardening levels. It shows good results on dark voltage after ionizing radiation for TH 7863M device hardened both by design and by operating conditions (MPP mode) with respect to the standard device TH 7863A. The irradiations were performed with "6"0Co or X-ray (10 keV) sources on devices in operating mode. (author). 3 refs., 8 figs.

221

Biological effects and physical safety aspects of NMR imaging and in vivo spectroscopy  

Energy Technology Data Exchange (ETDEWEB)

An assessment is made of the biological effects and physical hazards of static and time-varying fields associated with the NMR devices that are being used for clinical imaging and in vivo spectroscopy. A summary is given of the current state of knowledge concerning the mechanisms of interaction and the bioeffects of these fields. Additional topics that are discussed include: (1) physical effects on pacemakers and metallic implants such as aneurysm clips, (2) human health studies related to the effects of exposure to nonionizing electromagnetic radiation, and (3) extant guidelines for limiting exposure of patients and medical personnel to the fields produced by NMR devices. On the basis of information available at the present time, it is concluded that the fields associated with the current generation of NMR devices do not pose a significant health risk in themselves. However, rigorous guidelines must be followed to avoid ...

1985-08-01

222

Benefits of Using the Photosimulation Laboratory Environment ...  

Science.gov (United States)

... with the ability to capture imagery in raw 24-bit format, combined with large memory storage devices enable high resolution imagery to be captured ...

2002-08-01

223

Analysis by mass spectroscope device provided with ion source of induced plasma  

International Nuclear Information System (INIS)

This chapter consists of some points including an introduction, the basic parts of mass spectroscope device, sample introduction into the inductively coupled plasma, pneumatic nebuliser, ultrasonic nebuliser, dry gas cloud system, laser ablation unit, inductively coupled plasma-ion source, extraction of ions from ion source, mass analysis, quad-polar mass spectrometer, dual assembly mass spectrometer, mass spectrometer by calculation of time of flight, ion interferences and the ability of resolution, ion counter, working conditions of inductively coupled plasma mass spectroscope device, efficiency of ion transportation in an inductively coupled plasma mass spectroscope device and applications of analysis using mass spectroscope of induced plasma including nuclear, industrial, geological, environmental and archaeological applications, measurement of isotopes ratio and applications in tracing crimes.

224

A radiation monitoring system for nuclear fusion devices  

International Nuclear Information System (INIS)

Fusion device produces high-level neutrons and #gamma#-rays, which would hazard the safety of the public and workers if the doses would be higher than the regulatory limits because of leakage from the bio-shielding and skyshine. It is essential to monitor the radiation doses in the workshop and the enumerative around fusion devices. A radiation monitoring system (RMS) for full (near and far) areas around a nuclear fusion device has been designed and developed, which can achieve the monitoring and controlling of radiation doses in the workshop area by using the Controller Area Network (CAN), in the institution area by using the Bluetooth Ad hoc network based on a new tree topology formation and routing protocol and in a long range environment by using the General Packet Radio Service (GPRS) network. (authors)

2005-12-01

225

A motor-driven hoisting winch with a safety-braking device  

International Nuclear Information System (INIS)

... brakes reactor charging machines reactors machine parts Int. Cl. B66d5/00;

226

Shape evolution of nanostructures by thermal and ion beam processing. Modeling and atomistic simulations  

International Nuclear Information System (INIS)

Single-crystalline nanostructures often exhibit gradients of surface (and/or interface) curvature that emerge from fabrication and growth processes or from thermal fluctuations. Thus, the system-inherent capillary force can initiate morphological transformations during further processing steps or during operation at elevated temperature. Therefore and because of the ongoing miniaturization of functional structures which causes a general rise in surface-to-volume ratios, solid-state capillary phenomena will become increasingly important: On the one hand diffusion-mediated capillary processes can be of practical use in view of non-conventional nanostructure fabrication methods based on self-organization mechanisms, on the other hand they can destroy the integrity of nanostructures which can go along with the failure of functionality. Additionally, capillarity-induced shape transformations are effected and can thereby be controlled by applied fields and forces (guided or driven ...

2009-05-12

227

Light-weight free-standing carbon nanotube-silicon films for anodes of lithium ion batteries.  

Science.gov (United States)

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced concrete, where the infiltrated CNT network functions as both ...

2010-07-27

228

XPS study on the correlation between chemical state and oxygen-sensing properties of an iron oxide thin film  

International Nuclear Information System (INIS)

We have studied the correlation between the chemical state and the oxygen-sensing properties of an iron oxide thin film using a setup that allows simultaneous sensor resistance measurements and X-ray photoelectron spectroscopy (XPS) data acquisition. The gas exposures were performed at the highest operating pressure of the XPS spectrometer at a controlled sample temperature which allows direct comparison between the sensor response and the chemical state of the surface. The iron oxide film was modified by a sequence of argon ion sputtering steps and the induced changes in the chemical state, resistance, and sensitivity to oxygen were investigated. The sputtering was found to reduce the iron from the Fe"3"+ to the Fe"2"+ state and to decrease the sensor resistance. The measured sensitivity to oxygen first increased by a factor of two but then collapsed to its original level. The mechanism for oxygen sensing was found to be filling of the oxygen vacancies in the lattice. The effect of ...

2007-10-15

229

Thin TiO2 grown by metal?organic chemical vapor deposition on (NH4)2S x -treated InP  

British Library Electronic Table of Contents (United Kingdom)

The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...

2011-01-01

230

The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon  

International Nuclear Information System (INIS)

High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is to show that the UHT annealing technique is ...

2005-02-15

231

Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs  

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on the surface of a semiconductor. The ...

2006-10-15

232

Radioisotope space power generator annual report for the period October 1, 1976-September 30, 1978  

Energy Technology Data Exchange (ETDEWEB)

Techniques for fabricating P-type (Cu,Ag)/sub 2/Se with mesh-type bonds have been developed and are being evaluated for long-term use. In addition, methods for reducing vapor suppression by the use of coatings and/or baffling continue to show gains. The N-type alloy Gd/sub 2/Se/sub 3/ has been shown to be thermally unstable. It undergoes a sluggish cubic-to-orthorhombic phase change below 1000/sup 0/C, with an accompanying degradation in mechanical and thermoelectric properties. Fabrication studies conducted with the (Bi,Sb)/sub 2/(Se,Te)/sub 3/ alloys showed these materials to be sensitive to oxygen contamination if reproducible properties are to be obtained. Preparation of powdered material by explosive techniques was investigated. This technique appears to be useful in preparing homogeneous -325 mesh material, but it does not yield a useful amount of submicron-size powder.

1980-01-01

233

Preparation of TiO2/NiO composite particles and their applications in dye-sensitized solar cells  

British Library Electronic Table of Contents (United Kingdom)

This study investigates the applicability of n-type TiO2 and p-type NiO on the FTO-glass (Fluorine doped tin oxide, SnO2:F) substrate of the working electrode in a dye-sensitized solar cell (DSSC). The working electrode was designed and fabricated by depositing a film of TiO2/NiO composite particles, which were prepared by mixing the Ni powder with TiO2 particles using dry mixing method, on a FTO-glass substrate using a spin coating process. The working electrode was then immersed in the solution of N-719 (Ruthenium) dye at a temperature of 70degreeC for 6h. Moreover, a thin film of platinum (Pt) was deposited on the FTO-glass substrate of the counter electrode using an E-beam evaporator. Finally, the DSSC was assembled, and the short-circuit photocurrent, the open-circuit photovoltage and...

2011-01-01

234

Minority-carrier lifetime damage coefficient of irradiated InP  

Energy Technology Data Exchange (ETDEWEB)

Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5{times}10{sup 15} and 1.3{times}10{sup 17}cm{sup {minus}3}) and p-type (2.5{times}10{sup 17}cm{sup {minus}3}) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 10{sup 4} and 10{sup 5}, respectively. {copyright} {ital 1997 American Institute of Physics.}

1997-09-01

235

Magnetization and 61Ni Moessbauer effect study of the ternary arsenide CrNiAs  

International Nuclear Information System (INIS)

The results of x-ray diffraction, dc magnetization, and 61Ni Moessbauer spectroscopy studies of the ternary arsenide CrNiAs are reported. This compound crystallizes in the orthorhombic Fe2P-type structure (space group P6-bar2m) with the lattice parameters a 6.1128(2) A and c = 3.6585(1) A. CrNiAs is a mean-field ferromagnet with Curie temperature TC = 171.9(1) K and the critical exponents ? 0.514(18), ? = 1.010(16), and ? = 2.922(10). The temperature dependence of the magnetic susceptibility above TC follows the modified Curie-Weiss law with a paramagnetic Curie temperature of 176.0(3) K and effective magnetic moment per transition metal atom of 2.42(1) ?B. The magnetic moment per formula unit at 4.2 K is found to be 1.114(33) ?B. The hyperfine magnetic field at 61Ni nuclei at 4.2 K of 41.5(1.0) kOe implies that the Ni atoms carry a magnetic moment of 0.15(3) ?B, and that the moment carried by the Cr atoms is 0.95(6) ?B. The Debye temperature of CrNiAs is 221(1) K.

2008-08-13

236

Improved AlGaInP-based red (670--690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design  

Science.gov (United States)

A modified epitaxial design leads to straightforward implementation of short (1{lambda}) optical cavities and the use of C as the sole {ital p}-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

1995-07-17

237

Growth of single-crystal metastable semiconducting (GaSb)_1/sub -//sub x/Ge/sub x/ films  

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole concentrations varying from ...

6180-01-01

238

Formation of high resistivity regions in [ital p]-type Al[sub 0. 5]In[sub 0. 5]P by ion implantation  

Science.gov (United States)

Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.

1993-12-06

239

Electrochemical characterisation of patterned carbon nanotube electrodes on silane modified silicon  

Energy Technology Data Exchange (ETDEWEB)

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important electrochemical parameters such as electrode kinetics, electron ...

2008-07-20

240

Doping of silicon carbide by ion implantation  

Energy Technology Data Exchange (ETDEWEB)

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is ...

2001-07-01

241

Treatment of uteral cancer by the brake irradiation (25 MeV)  

International Nuclear Information System (INIS)

The method of treatment of uteral cancer by the brake irradiation of 25 MeV betatrone using original devices which promote forming therapeutic figured bunches is presented. The binding of the protective blocks with a special adjusting frame within the aperture of the diaphragm provided for low relative entering dose which is the advantage of high energy irradiation bunch. The use of the forming devices makes it possible to practice individual treatment and decrease the levels of irradiation doses for intact organs and tissues.

242

The first insertion devices at SSRL - some personal recollections  

Energy Technology Data Exchange (ETDEWEB)

The author recounts his experiences with insertion devices at the Stanford Synchrotron Radiation Laboratory. His first experiences with wigglers occured at the Cambridge Electron Accelerator, and was carried over to SSRL with the proposal for a six pole electromagnetic wiggler. Most modern undulators, and many wigglers are now designed around permanent magnets, and the origin of this transition at SSRL was rather fortuitous and humorous. It reflects some of the personality characteristics of Klaus Halbach.

1995-02-01

243

The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

1994-06-01

244

The effects of cosmic radiation on implantable medical devices  

Energy Technology Data Exchange (ETDEWEB)

Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A ...

1996-12-31

245

The THz Radiation from Undulator  

Science.gov (United States)

The experimental device for generation of undulator radiation in terahertz wavelength region by use of undulator with ferromagnets is created. The device is based on a beam of a microtron with the energy 7.5 MeV. The radiation wavelength is 200 mu. Registered spontaneous radiation has a power 10{sup -6} W at a current of a beam 2 mA in a pulse. With the optical resonator, in a mode, the amplification of 6% is received, that in sometimes is more than the expected value. This effect is explained as a result of partial coherence of radiation.

2010-02-03

246

Proton beam therapy control system  

Energy Technology Data Exchange (ETDEWEB)

A tiered communications architecture for managing network traffic in a distributed system. Communication between client or control computers and a plurality of hardware devices is administered by agent and monitor devices whose activities are coordinated to reduce the number of open channels or sockets. The communications architecture also improves the transparency and scalability of the distributed system by reducing network mapping dependence. The architecture is desirably implemented in a proton beam therapy system to provide flexible security policies which improve patent safety and facilitate system maintenance and development.

2010-09-21

247

Physical modeling of flow control device test in intake structure  

International Nuclear Information System (INIS)

The seawater in the intake structure flows into the large pump to with draw excess heat from the turbine steam condenser. In the intake structure of a nuclear power plant, undesirable pump operating characteristics such as vortices, impeller damages and non-uniform pump-approach flow around the pump bells take place frequently due to poorly-arranged intake geometry. In this study, physical modeling test was performed to predict the hydraulic phenomenon, and proposed flow control devices.

2000-05-01

248

Phantom simulation device for scintillation cameras  

Energy Technology Data Exchange (ETDEWEB)

A phantom simulation imaging quality control device is described that effectively simulates one centimeter lesions, using steel ball bearings as gamma ray attenuators. The bearings are mounted in a synthetic resinous sheet in an orthogonal pattern. The phantom can provide uniformity, resolution, linearity, distortion and field size checks, all with a single exposure.

1981-08-25

249

PV Conversion Technologies, Session: OPV, Sensitized, Seed (Presentation)  

Energy Technology Data Exchange (ETDEWEB)

The NREL Sensitized Solar Cell (SSC) Core Program supports the Solar America Initiative by: (1) targeting new devices and processes for commercialization by 2015 that are less expensive, more efficient, highly reliable, and environmentally benign; (2) collaborating with DOE OS/BES to conduct basic research targeting breakthroughs in key areas, such as ultra-high efficiency and/or ultra-low cost materials and devices.

2008-04-01

250

On the Uniqueness of Solutions of a Nonlinear Elliptic Problem Arising in the Confinement of a Plasma in a Stellarator Device  

International Nuclear Information System (INIS)

We study the uniqueness of solutions of a semilinear elliptic problem obtained from an inverse formulation when the nonlinear terms of the equation are prescribed in a general class of real functions. The inverse problem arises in the modeling of the magnetic confinement of a plasma in a Stellarator device. The uniqueness proof relies on an L"#infinity# -estimate on the solution of an auxiliary nonlocal problem formulated in terms of the relative rearrangement of a datum with respect to the solution.

251

New safety device announced for nuclear power plants  

International Nuclear Information System (INIS)

An Ottawa-based company, ECS-Power Systems Inc., has successfully completed a series of tests on an innovative device called a hydrodynamic port (HDP), which makes it possible to automatically initiate and maintain emergency cooling of a nuclear reactor core by natural processes, without relying in any way on human intervention, instrumentation, electric power, valves or moving parts of any kind.

252

MOS device chemical response reversal with temperature  

British Library Electronic Table of Contents (United Kingdom)

Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (DV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.

2010-01-01

253

Josephson junctions as heterodyne detectors  

International Nuclear Information System (INIS)

Heterodyne detection with a point-contact Josephson junction has been investigated both experimentally and theoretically. The measured performance of the device at 36 GHz is in good agreement with the theory. By operating vanadium point contacts at 1.4 K, the authors have achieved a single-sideband (SSB) mixer noise temperature of 54 K with a conversion gain of 1.35 and a signal bandwidth on the order of 1 GHz. A potentially impressive performance for these devices at submillimeter wavelengths can be extrapolated from the results.

254

In a spin over power fluidics  

International Nuclear Information System (INIS)

In response to severe maintenance problems caused by the highly corrosive toxic and radioactive substance used in the nuclear reprocessing industry, AEA Technology (formerly the United Kingdom Atomic Energy Authority) has developed a series of power fluidics devices with no moving parts. These maintenance-free devices are described in this article which also explores applications in fields outside their original brief. (UK).

255

Improving airport explosives detection  

Energy Technology Data Exchange (ETDEWEB)

ORNL has developed the technology to detect hidden explosives in luggage using X ray and neutron detection devices. The Federal Aviation Administration has ordered the airlines to buy and install Thermal Neutron Analysis (TNA) units. The combined pulsed-neutron and X-ray interrogation inspection (CPNX) system developed at ORNL uses less radioactive materials as well as being more sensitive to weapons, electronic devices and plastic explosives.

1990-01-01

256

Experimental study on the uses of SQUID magnetometers as sensitive, low-frequency eddy current probes for non-destructive materials evaluation. Final report  

International Nuclear Information System (INIS)

The results show that the SQUID device eddy current testing system is a suitable tool for NDE. Due to the high low-frequency sensitivity of the SQUID sensor, the SQUID device eddy current testing system permits lower examination frequencies than the conventional eddy current probe system. The SQUID system enhances fault detection in even deeper materials layers. (orig./MM).

1996-01-01

257

Expanding the Limits of CdTe PV Performance: Phase I Annual Report, 7 February 2006 - 30 June 2007  

Energy Technology Data Exchange (ETDEWEB)

First Solar made 9 CdTe PV devices; found two front- and one back-side structures that show improved Jsc and Voc, respectively, compared to base device structure; best cell efficiency was 14.13%.

2007-12-01

258

Electrical Circuit Tester  

Energy Technology Data Exchange (ETDEWEB)

An electrical circuit testing device is provided, comprising a case, a digital voltage level testing circuit with a display means, a switch to initiate measurement using the device, a non-shorting switching means for selecting pre-determined electrical wiring configurations to be tested in an outlet, a terminal block, a five-pole electrical plug mounted on the case surface and a set of adapters that can be used for various multiple-pronged electrical outlet configurations for voltages from 100 600 VAC from 50 100 Hz.

2006-04-18

260

Digital optical processing system  

Energy Technology Data Exchange (ETDEWEB)

Digital optical processing (DOP) was conceived to encompass the advantages of both electronic and optical processors, which are parallelism, flexibility, and high accuracy. The authors discuss the concept of parallelism, how it applies to DOP differently than to electronic parallel processing, and other potential advantages in using DOP. A PLZT memory device is described which can perform a series of logic or memory operations. From several of these PLZT devices a DOP is constructed to illustrate some of its programmability features.

1983-01-01

261

Device for marking and searching for information on a magnetic carrier  

Science.gov (United States)

A device for marking and searching for information on a magnetic carrier is described. In order to increase the noise immunity and reliability of the data recording and reading paths, the recording head is included between the amplifier of the clock pulses for the master oscillator and through the amplifier of the code pulses for the logical element unit. The reproduction head is connected through the code pulse shaper-amplifier with a switch which is connected with the display unit, and through another analogous clock pulse amplifier with a multivibrator.

1984-03-01

262

Device for laying cut peat in a drying formation  

Energy Technology Data Exchange (ETDEWEB)

A device for laying cut peat in drying formations is proposed consisting of separate compartments, reinforced on a common frame and with mechanisms for both vertical and horizontal mixing. In order to intensify the drying process, within the scope of laying cut peat, uniform clearances and spacing in formations is applied. The mixing compartments are joined in sections with capabilities for separate mixing in each unit. The compartments are joined together by hinges and can be turned 180 degrees on the hinges horizontal to the plane.

1980-06-17

263

De-entrainment of boron by evaporation  

Energy Technology Data Exchange (ETDEWEB)

The purpose of this research was to investigate the de-entrainment of boron for evaporators used in nuclear power plants. The forced circulation and semi-continuous type evaporator was used in the experiment. Cyclone and glass-wool packed column which is supposed to provide good decontamination factor as well as easy maintenance, were selected as de-entrainment device to be used in the evaporation of radioactive liquid wastes. The de-entrainment device combined with cyclone and glass-wool column has shown overall DF more than 1000 for boron.

1986-12-01

264

Coulomb Repulsion in Miniature Ion Mobility Spectrometry  

Energy Technology Data Exchange (ETDEWEB)

We have undertaken a study of ion mobility resolution in a miniature ion mobility spectrometer with a drift channel 1.7 mm in diameter and 35 mm in length. The device attained a maximum resolution of 14 in separating ions of NO, O{sub 2}, and methyl iodine. The ions were generated by pulses from a frequency-quadrupled Nd:YAG laser. Broadening due to Coulomb repulsion was modeled theoretically and shown experimentally to have a major effect on the resolution of the miniature device.

1999-08-08

265

Cooling device for rotors of multistage axial steam turbines  

International Nuclear Information System (INIS)

The invention concerns an improvement of a cooling device for rotors of multistage axial steam turbines by providing in the first stage of each group of turbine stages a circulation loop connecting the wheel chamber on the inlet side of the rotor disc of the first stage with the wheel chamber on its outlet side. This is to cause the cooling effect not to be hampered by gap widths of the seal in the bottom range of the rotor blades changing during operation. Design particulars are described in detail. (UWI).

266

Control device for condensate cleanup system  

International Nuclear Information System (INIS)

Purpose: To ensure continuous operation for condensate desalters with the control device for desalter group in a nuclear power plant by automatically averaging the operation interval between each of the desalters. Constitution: Electroconduction meters are provided at the inlet and the outlet for each of the desalters. The conduction rates at the inlet and outlet are compared to determine the re-generation timing of the condensate desalter. Limiting set value for each of the equipments in the cleanup systems is changed by using a mathematical operation circuit to average the operation interval between each of the desalters. (Ikeda, J.).

267

Continuous flow dielectrophoretic particle concentrator  

Energy Technology Data Exchange (ETDEWEB)

A continuous-flow filter/concentrator for separating and/or concentrating particles in a fluid is disclosed. The filter is a three-port device an inlet port, an filter port and a concentrate port. The filter separates particles into two streams by the ratio of their dielectrophoretic mobility to their electrokinetic, advective, or diffusive mobility if the dominant transport mechanism is electrokinesis, advection, or diffusion, respectively.Also disclosed is a device for separating and/or concentrating particles by dielectrophoretic trapping of the particles.

2007-04-17

268

A tube inspection device. Dispositif de controle de tubes  

Energy Technology Data Exchange (ETDEWEB)

The device, aimed at non destructive control of the inner side of tubes such as steam generator tubes, is composed of a control sensor mounted on a support; the sensor head may rotate in the tube and a measuring system and signal processing allow for the exact determination of the angular position of the sensor head (application to ultrasonic or eddy current probes).

1993-05-07

269

A string sieve  

Energy Technology Data Exchange (ETDEWEB)

A string sieve is proposed which includes a frame, a sifting surface made of string, a device for attaching the strings made in the form of rollers installed in staggered order and a tensing device attached to traverses. To improve the effectiveness of sifting by self cleaning of the sifting surface during operation, the rollers are installed on the traverses by means of a unit of hinges, whose elastic elements are made with varying rigidity.

1983-01-01

270

Techniques for measurement of velocity in liquid-metal MHD flows  

Energy Technology Data Exchange (ETDEWEB)

Three instruments for measuring local velocities in liquid-metal MHD experiments for fusion blanket applications are being evaluated. The devices are used in room-temperature NaK experiments to measure three-dimensional flow field patterns anticipated in complex blanket geometries. Hot film anemometry, a standard technique in ordinary fluids, is being used, as well as two developmental devices. One is called the Liquid Metal Electromagnetic Velocity Instrument (LEVI), and performs essentially as a local dc electromagnetic flow meter. The third device, a Thermal Transient Anemometer (TTA) is a rugged, yet relatively simple device, which measures local velocity through the mechanism of convective heat transfer, in some ways similar to hot-film anemometry. Results are presented showing the kinds of data collected this far with each instrument. Measurements include both local velocity measurements and some ...

1986-01-01

271

Spontaneous Radiation Emission from Short, High Field Strength Insertion Devices  

Energy Technology Data Exchange (ETDEWEB)

Since the earliest papers on undulaters were published, it has been known how to calculate the spontaneous emission spectrum from ''short'' undulaters when the magnetic field strength parameter is small compared to unity, or in ''single'' frequency sinusoidal undulaters where the magnetic field strength parameter is comparable to or larger than unity, but where the magnetic field amplitude is constant throughout the undulater. Fewer general results have been obtained in the case where the insertion device is both short, i.e., the magnetic field strength parameter changes appreciably throughout the insertion device, and the magnetic field strength is high enough that ponderomotive effects, radiation retardation, and harmonic generation are important physical phenomena. In this paper a general method is presented for calculating the radiation spectrum for short, high-field ...

2005-09-15

272

Partial top dielectric stack distributed Bragg reflectors for red vertical cavity surface emitting laser arrays  

Energy Technology Data Exchange (ETDEWEB)

Room temperature continuous wave operation of red ([lambda][sub 0] [approximately] 660 nm) vertical cavity surface emitting laser arrays is reported. The 1 [times] 64 arrays have a pitch of 100 [mu]m with device diameters of 15 [mu]m with device diameters of 15 [mu]m. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGaInP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operation simultaneously with peak output powers >0.45 mW, threshold current <1.5 mA, and threshold voltages [<=] 2.7 V. The differential quantum efficiencies exceed 10%.

1994-12-01

273

Fabrication and characterization of polyterpenol as an insulating layer and incorporated organic field effect transistor  

Energy Technology Data Exchange (ETDEWEB)

A non-synthetic polymer material, polyterpenol, was fabricated using a dry polymerization process namely RF plasma polymerization from an environmentally friendly monomer and its surface, optical and electrical properties investigated. Polyterpenol films were found to be transparent over the visible wavelength range, with a smooth surface with an average roughness of less than 0.4 nm and hardness of 0.4 GPa. The dielectric constant of 3.4 for polyterpenol was higher than that of the conventional polymer materials used in the organic electronic devices. The non-synthetic polymer material was then implemented as a surface modification of the gate insulator in field effect transistor (OFET) and the properties of the device were examined. In comparison to the similar device without the polymer insulating layer, the polyterpenol based OFET device showed significant improvements. The addition of the ...

2010-08-31

274

Sandia LSI accelerated aging and data acquisition techniques  

Energy Technology Data Exchange (ETDEWEB)

The purpose of the Microelectronic Evaluation Laboratory at Sandia is to develop a program for evaluating CMOS LSI (complementary metal oxide silicon - large scale integrated) technology devices which are being used for the first time in a weapon system. These evaluations are based on accelerated aging studies and electrical tests to determine the reliability and life of the devices. In accelerated aging, specific, controlled stresses are applied to the device to accelerate time-to-failure. Data are used tin mathematical models to estimate life in acutal use. The stresses used for this technology are temperature and voltage. The devices are stored at temperatures with or without voltage applied (steady-state or cyclical) and periodically tested until at least 50% failures are encountered. Since most current technologies use epoxy-die-attachment, aging temperatures must be under 200/sup 0/C. This delays ...

1980-04-01

275

Plasma treatment of the Mg:Ag/tris-(8-hydroxyquinoline) aluminum interface in OLEDs: effects on adhesion and performance  

Energy Technology Data Exchange (ETDEWEB)

The adhesion of a Mg:Ag cathode to the tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) in organic light emitting devices (OLEDs) can be greatly enhanced by a remote plasma treatment of the Alq{sub 3} layer using either air or N{sub 2} prior to metal deposition. The altered surface properties which lead to increased sticking coefficients of Mg and Ag, as well as enhanced adhesion, are attributed to the introduction of new functional groups into the organic layer, as observed by X-ray photoelectron spectroscopy (XPS). The storage life of the plasma treated devices in air without any capping treatment, as judged by a visible deterioration of the cathode, was increased by approximately five to six times compared to untreated OLEDs. Current-voltage characteristics and EL efficiency, however, were shown to deteriorate for devices incorporating either an air or an N{sub 2} plasma treated Alq{sub 3} layer. For OLEDs subjected to ...

2004-05-31

276

Evaluation of methods to measure surface level in waste storage tanks: Second test sequence  

Energy Technology Data Exchange (ETDEWEB)

This report describes the results of a program conducted at the Pacific Northwest Laboratory (PNL) and Westinghouse Hanford Company (WHC) to identify alternative methods to measure the surface level in the waste tanks. This program examined commercially available devices for measuring the distance to a target. This is a continuation of a program started in FY93. In the first test sequence, tests were performed.on five devices to determine their applicability to measure the surface level in the waste tanks. The devices were the Enraf-Nonius{trademark} Model 872 Radar Gauge, the Enraf-Nonius{trademark} Model 854 Advanced Technology Gauge (ATG), the Stanley Tool Laser Measuring Device, the Robertshaw Inven-Tel{reg_sign} Precision Level Gauge, and the Micro Switch Model 942 Acoustic Sensor. In addition, discussions were held with several manufacturer representatives regarding other potential ...

1993-09-01

277

X-ray imaging dose due to the digital imaging devices used in radiation therapy for patient positioning and repositioning: How to take it into account?; Les doses dues a l'imagerie numerique pour le controle de positionnement du patient en radiotherapie: comment les prendre en compte?  

Energy Technology Data Exchange (ETDEWEB)

The patient positioning and repositioning control in radiation therapy all along the treatment can be conducted using a variety of X-ray sources and imaging detector devices. The development of image guided radiation therapy techniques leads to more frequent use of this imaging control. In this article we summarize the current methods for measuring the dose delivered by X-ray imaging devices used in radiation therapy, as well as basic proposals to take account of these imaging doses for prescribing, recording and reporting radiation therapy treatment. (authors)

2008-12-15

278

Transversal bearing device for a nuclear reactor component, transversal bearing device for a PWR steam generator and its adjusting process. Dispositif de maintien transversal d'un composant d'un reacteur nucleaire, ensemble de maintien transversal d'un generateur de vapeur d'un reacteur nucleaire a eau sous pression et son procede de reglage  

Energy Technology Data Exchange (ETDEWEB)

The lateral bearing device is made of 7 lateral supports, each positioned to allow the displacement of the steam generator due to thermal or seismic effects. Each support includes a buffer plate that can be positioned on the steam generator using a position control assembly. This control assembly consists of a screw jack arrangement where the nut is fastened via an energy absorbing layer to a footplate that is fixed to the concrete wall of the steam generator enclosure. 4 figs.

1993-10-01

279

Reliability of Speech Generating Devices: A 5-Year Review  

British Library Electronic Table of Contents (United Kingdom)

Individuals who use augmentative and alternative communication (AAC) depend on technology to meet their daily needs and form relationships. Speech generating devices (SGDs) are integral components of communication systems. Reliability of SGDs is critical for effective use in everyday life. This study examined the reliability of new SGDs and found that mean time to first failure was 42.7 (SD = 41.2) weeks and at least 40% required repairs within the first year of use. The components that most frequently broke down were touch screens, wiring, main boards, batteries, memory cards, and AC adaptors. The costs of repairing SGDs were analyzed. The clinical implications of device breakdown are identified for key stakeholders, including clients, families, service providers, funding agencies, and ma...

2009-01-01

280

Radiation treatment of medical devices and packaging materials. Pt. 1  

International Nuclear Information System (INIS)

The first part of the study contains a literature compilation of more than 50 original publications reporting the radiation induced effects in 17 different high polymer materials and glass which are relevant in the manufacturing of medical devices or packing materials. The results collected demonstrate that high energy radiation, i.e. gamma- or X-rays, causes various physical and chemical alterations in high polymer materials. A detailed summary and discussion of the results of the original publications is not included in the present report, it will be presented in the second part of the study. Furthermore, the second part of the study will refer to the aspect of wholesomeness of irradiated medical devices or packing materials in a more general manner of representation. (orig.).

281

Printers: the neglected threat  

British Library Electronic Table of Contents (United Kingdom)

One of the issues with printers - or the increasingly common multi-function devices (MFDs) - is that no one takes any notice of them. They just sit there, unacknowledged and ignored, in the corner of the office, printing, photocopying, faxing and even emailing away and no one gives them a second thought. Until something goes wrong. No-one gives printers - or multi-function devices (MFDs) - a second thought, as they have just been sitting there in offices doing their thing for years. But the problem is that they have now grown up to become fully-fledged computers and are starting to present an information security risk. These machines now have operating systems, hard drives and IP addresses, and have been exploited as storage devices by hackers. But most problems stem from poor internal pra...

2011-01-01

282

Photo-emission-electron-microscopy for characterization of an operating organic electronic device  

Energy Technology Data Exchange (ETDEWEB)

Photoemission-electron-microscopy (PEEM) is introduced as a tool for the characterization of organic electronic devices. PEEM-measurements are used for imaging as well as for spectroscopic analyses by illumination with light of a Hg-lamp (4.9 eV), a D2 lamp (7.3 eV), and with synchrotron radiation for resonant photoelectron spectroscopy. We determine the charge carrier concentration inside the channel region of the organic device and its lateral distribution. From resonant photoelectron spectroscopy (RPES) we deduce the electronic states which are accessible with the Hg and D2 illumination. Photoelectron-spectroscopy at selected areas ({mu}-PES) gives information on the absolute values of surface potentials in lateral resolution. We are able to perform these studies with applied voltages at the source- and drain-electrode.

2006-01-20

283

Optoelectronic devices grown by metallo-organic chemical vapor deposition  

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

284

Measurement of the ratio of liquid to solid phases in a continuous ingot  

International Nuclear Information System (INIS)

A radiometric method of measuring the ratio of liquid and solid phases (crust thickness) in a continuous ingot for automation of the continuous steel casting process, has been proposed. The essence of the method is, that radiation flux, bearing information on the object tested, is transformed in a succession of electric pulses, which is processed afterwords for obtaining necessary information. In this case either the flux of non-scattered radiation, passed through the object, or the flux of single-scattered radiation reflected from the object is registered. Block-diagram and specifications of a radiometric device with the Co source of 50 gxequiv. Ra activity developed for this purpose are presented. The technique for calibration ob the device and the results of its tests, are described. It is shown, that introduction of such devices for the control crust thickness at the installations of continuous steel casting of ...

285

J{sup {asterisk}} optimization of small aspect ratio stellarator/tokamak hybrid devices  

Energy Technology Data Exchange (ETDEWEB)

A new class of low aspect ratio toroidal hybrid stellarators is found using a more general plasma confinement optimization criterion than quasisymmetrization. The plasma current profile and shape of the outer magnetic flux surface are used as control variables to achieve near constancy of the longitudinal invariant J{sup {asterisk}} on internal flux surfaces (quasiomnigeneity), in addition to a number of other desirable physics target properties. A range of compact (small aspect ratio A), low plasma current devices have been found with significantly improved confinement, both for thermal as well as energetic (collisionless) particle components. With reasonable increases in magnetic field and geometric size, such devices can also be scaled to confine 3.5 MeV alpha particle orbits.

1998-05-01

286

J* optimization of small aspect ratio stellarator/tokamak hybrid devices  

Energy Technology Data Exchange (ETDEWEB)

A new class of low aspect ratio toroidal hybrid stellarators is found using more general plasma confinement optimization criterion than quasi-symmetrization. The plasma current profile and shape of the outer magnetic flux surface are used as control variables to achieve near constancy of the longitudinal invariant J* on internal flux surfaces (quasi-omnigeneity), in addition to a number of other desirable physics target properties. We find that a range of compact (small aspect ratio A), high {beta} (ratio of thermal energy to magnetic field energy), low plasma current devices exist which have significantly improved confinement both for thermal as well as energetic (collisionless) particle components. With reasonable increases in magnetic field and geometric size, such devices can also be scaled to confine 3.5 MeV alpha particle orbits.

1997-12-31

287

Google Android: A State-of-the-Art Review of Security Mechanisms  

CERN Document Server

Google's Android is a comprehensive software framework for mobile communication devices (i.e., smartphones, PDAs). The Android framework includes an operating system, middleware and a set of key applications. The incorporation of integrated access services to the Internet on such mobile devices, however, increases their exposure to damages inflicted by various types of malware. This paper provides a comprehensive security assessment of the Android framework and the security mechanisms incorporated into it. A methodological qualitative risk analysis that we conducted identifies the high-risk threats to the framework and any potential danger to information or to the system resulting from vulnerabilities that have been uncovered and exploited. Our review of current academic and commercial solutions in the area of smartphone security yields a list of applied and recommended defense mechanisms for hardening mobile devices in ...

2009-01-01

288

FEOL technology trend  

International Nuclear Information System (INIS)

Trends in front-end-of-line technology are discussed. At the chip level, many of the important parameters are published in the National Technology Roadmap for Semiconductors in 1994. At the device and circuit level, both bipolar and CMOS are scalable. However, the large standby power of bipolar circuits severely limits the integration level of bipolar chips. The inherently low standby power of CMOS, on the contrary, allows the integration level of CMOS circuits to continue increasing with scaling. In reality, both the electric field and power density of CMOS devices have been gradually rising over the generations owing to non-scaling effects of thermal voltage and silicon bandgap. As power supply voltage reaches 1.5V and below, circuit performance can only be gained at the expense of higher active or standby power of the chip. Implications of device scaling on contact and silicide technology are addressed. Trends of local ...

289

Energy-based hemostatic devices in laparoscopic adrenalectomy  

British Library Electronic Table of Contents (United Kingdom)

Purpose In literature, few papers compare different hemostatic devices in laparoscopic adrenalectomy. This sequential cohort study analyzes the outcomes of laparoscopic adrenalectomy performed by different hemostatic instruments, to evaluate if any of them has any advantage over the other and as secondary endpoints, the impact of body mass index (BMI) and tumor size on the indication, and the outcome of laparoscopic adrenalectomy. Methods Forty-six patients, aged 54.6???46?years, underwent laparoscopic adrenalectomy over 5?years. Mean BMI was 27???4.8?kg/m2. Twenty-four patients had a left tumor, and 22 had a right one. Patients were divided into two groups according to the hemostatic device: Ultracision was used in 26 patients, and Ligasure was used in 20. Groups were well matched for his...

2010-01-01

290

Electron beam, ion beam, X-ray optical techniques for fabricating surface-acoustic-wave and thin-film optical devices  

International Nuclear Information System (INIS)

Most surface-acoustic-wave and thin-film optical devices are made by the planar fabrication process. The exposure of the pattern in the polymer film is the first and most crucial step in ensuring desired device geometry, dimensional control, and freedom from pattern distortion. The methods of exposing the polymer film include: optical projection, conventional contact printing, conformable photomask contact printing, holographic recording, scanning electron beam lithography, projection electron lithography, and x-ray lithography. In this paper scanning electron beam lithography, conformable photomask contact printing, holographic recording, and x-ray lithography are discussed. In the last section, ion beam etching of relief structures is discussed.

291

Device for energy-saving heating of fuel in the fuel supply for an internal combustion engine  

Energy Technology Data Exchange (ETDEWEB)

The invention concerns a device for the energy-saving heating of fuel in the supply pipe to an internal combustion engine to regain energy from the fuel itself, particularly but not exclusively for a Diesel engine. A part of the quantity of heat added to the fuel between the tank and the injection nozzles is given up by excess fuel not to the tank, but to the fuel lifted upstream of the injection pump. The device is characterised by the fact that it has a heat exchanger, which absorbs heat from the fuel at the level of the injection pump or upstream of it, and takes this to the fuel above the injection pump. The heat exchanger is preferably mounted upstream of a filter and close to it. A bridging pipe, which may be integrated in the heat exchanger, permits the heat exchanger to be short-circuited depending on the fuel temperature.

1981-02-10

292

Design and optimization of thermoacoustic devices  

International Nuclear Information System (INIS)

Thermoacoustics deals with the conversion of heat energy into sound energy and vice versa. It is a new and emerging technology which has a strong potential towards the development of sustainable and renewable energy systems by utilizing waste heat or solar energy. Although simple to fabricate, the designing of thermoacoustic devices is very challenging. In the present study, a comprehensive design and optimization algorithm is developed for designing thermoacoustic devices. The unique feature of the present algorithm is its ability to design thermoacoustically-driven thermoacoustic refrigerators that can serve as sustainable refrigeration systems. In addition, new features based on the energy balance are also included to design individual thermoacoustic engines and acoustically-driven thermoacoustic refrigerators. As a case study, a thermoacoustically-driven thermoacoustic refrigerator has been designed and optimized based on the developed ...

2008-12-01

293

Cooling device for impurity removal device in thermonuclear devices  

International Nuclear Information System (INIS)

Purpose: To prevent structure material meltdown upon rupture of cooling pipeways in a impurity remover by preventing the coolants from flowing into the vacuum vessel while continuing the supply of coolants to other portions to be cooled. Constitution: Dual cooling pipeway systems are disposed to the neutralizing plates of the impurity remover. A rupture detector (pressure gage) is mounted to each of the cooling pipeways and flow rate control valves to be opened and closed by the signal from the detector are disposed to the upstream and downstream of the cooling pipeway. In this constitution if the cooling pipes should be ruptured, the coolant supply is stopped to the ruptured system in which the flow rate valve is closed by the signal from the rupture detector. However, since the coolant is kept to be supplied to the other system of the cooling pipeways, meltdown of the neutralizing plates can be prevented. (Kamimura, M.).

1983-08-26

294

Control device in a reactor  

International Nuclear Information System (INIS)

Purpose: To flatten temperature distribution of coolant within a core. Constitution: The control device of the present invention is to vary reactivity of a fast breeder to control a reactor power. In general, the control device of this kind comprises a guide pipe arranged within the core and a control rod movable up and down within the guide pipe, and a coolant flows from bottom toward top within the guide pipe. Since a cooling flow rate has a margin, temperature of coolant outlet is extremely low as compared to a fuel assembly, and therefore temperature gradient in the vicinity of the top of the control rod becomes sharp to possibly impart thermal shock to the structural material. In the present invention, the flow passage of coolant is varied to thereby avoid outflow thereof into the core, thus flattening the temperature distribution of the coolant within the core. (Kamimura, M.).

295

Chemical sensors based on surface-confined dendrimers  

Energy Technology Data Exchange (ETDEWEB)

The use of dendrimers for preparing chemically sensitive interfaces for detecting volatile organic compounds (VOCs) using surface acoustic wave (SAW) device transducers is described. Specifically, the synthesis of the dendrimers and the means by which they are affixed to SAW devices is discussed, followed by a detailed spectroscopic analysis of the surface-confined dendrimers and a discussion of their interaction with different VOCs. Most of these preliminary experiments focus on dendrimer surface modification using benzoylchloride, which leads to phenyl terminal groups linked to the dendrimer via amide groups. The results of this study lead us to conclude that dendrimers: (1) provide general specificity towards classes of functional groups and are therefore suitable for array-based sensing schemes; (2) are intermediate in structure between monolayers and polymers and exhibit the desirable properties of both; (3) can be straightforwardly ...

1997-10-01

296

Ceramic Materials and Devices  

Science.gov (United States)

Course website from Cambridge on ceramic materials. This site contains eight lectures in PDF format (Adobe Reader required), two question sheets, five practicals (including answers), digital movies and further useful links. "There is a strong relationship between the structure of a material and its physical properties. The properties of a material whether mechanical, electrical, optical or magnetic, determine how it can be used in practical applications. In this course, the focus is on the structure / property relationship for ionic materials with electrical properties utilised in various transducer devices. The materials considered include perovskites, which have special polarisation properties exploited in ferroelectric, pyroelectric and piezoelectric devices. Other oxides, such as zirconia, have structures permitting rapid diffusion of ions, making them suitable for use in sensors, fuel cells and batteries. The scientific principles ...

2007-02-01

297

Applications of magnetorheological brakes in manual control of lifting devices and manipulators  

International Nuclear Information System (INIS)

The article is aimed to design and testing of joystick with force feedback used in direct, human control of lifting device. The paper starts with the basic description of designed and tested by us MR rotary brake. Some initial laboratory investigations results of such brakes are presented. The usage of MR brakes in 2 axis joystick is proposed. Such, built by as joystick, is described. It was used as Human-Machine Interface in active control of lifting device. The designed and built 2 axis manipulator with electrohydraulic drive is described. In the paper, the based on PC with input/output card, control system of mentioned above joystick with MR brake and manipulator is described. Finally the control algorithm is proposed.

2009-02-01

298

Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide  

Energy Technology Data Exchange (ETDEWEB)

In this work, we investigated self-heating related instability in polysilicon thin film transistors (poly-Si TFTs) fabricated on polyimide (PI) substrates. Indeed, when Joule heating becomes relevant, the temperature of the active layer can substantially rise, since the devices are fabricated on thermally insulating substrates. As a result, electrical instability is triggered and attributed to the generation of interface states, due to the Si-H bond breaking, and charge trapping into the gate insulator. In addition, by using 3-dimensional numerical simulations, coupling the thermodynamic and transport models, we analyzed the temperature distribution of the device under operating conditions and found that self-heating is more severe for devices fabricated on plastic substrates.

2009-10-01

299

A novel EPROM device fabricated using focused boron ion-beam implantation  

Energy Technology Data Exchange (ETDEWEB)

A novel floating-gate avalanche injection (FAMOS) type erasable programmable read-only memory (EPROM) device is demonstrated, with a heavily focused ion-beam (FIB) implanted region of about 0.2-..mu..m width at the drain edge of the channel. This heavily B/sup +/-doped region permits a higher electric field near the drain edge, resulting in a remarkable increase of the hot-carrier generation rate, and reduces both the programming voltage and programming time. A three-dimensional device simulator, CADDETH, predicted that the electric field at the drain edge would increase by about six times, which would lead to hot-carrier generation efficiency three orders of magnitude higher.

1987-06-01

300

X-ray dose enhancement effects  

International Nuclear Information System (INIS)

A brief description of the physical process of dose enhancement effects produced by X-ray radiation on materials is given, with emphasis on the influence on electronic devices. The damages caused by X-ray radiation dose enhancement is more serious than that of #gamma#-ray with higher energy.

301

Waterjet resection of brain metastases - first clinical results with 10 patients.  

Science.gov (United States)

The waterjet technique enables precise tissue dissection without thermal damage and with preservation of vessels in general surgery. In neurosurgery, these qualities could help to avoid damage of intact brain parenchyma in tumour resections. The present study reports our first results with this technique in brain metastases. Ten patients with intracranial metastases underwent surgery with the aid of the waterjet. Resection was performed in combination with conventional neurosurgical methods. The follow-up consisted of neurological examination and MRI studies. Intraoperatively, the device was easy to handle. No complications due to the device were observed. Vessels were preserved at pressures below 20 bars. Six of the tumours consisted of soft tissue which was poorly demarcated from the surrounding brain. In these tumours, the waterjet was very helpful. It enabled tumour debulking by aspiration and - more important - precise separation of tumour ...

2003-05-01

302

Wafer and Solar Cell Characterization by GT-PVSCAN6000  

Science.gov (United States)

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

2002-08-01

303

The Johnson antishear device and standard shin pad in the isokinetic assessment of the knee.  

UK PubMed Central (United Kingdom)

Isokinetic training and assessment of the knee joint has been the mainstay of rehabilitation, especially in patients with anterior cruciate ligament deficiency. Besides the original shin pad used, the...Full Text Available

1993-03-01

304

Test API: Interface DataAccessBean  

Science.gov (United States)

The DataAccessBean is similar to the Data Access Object (DAO) interface in that the DataAccessBean interface is meant to encapsulate the implementation details of the DynamicJavaBean that accesses persistent storage devices such as RDBMS, flat text file databases, etc.

305

Studies on Poly(propylene fumarate-co-caprolactone diol) Thermoset Composites towards the Development of Biodegradable Bone Fixation Devices  

UK PubMed Central (United Kingdom)

The effect of reinforcement in the cross-linked poly(propylene fumarate-co-caprolactone diol) thermoset composites based on Kevlar fibres and hydroxyapatite was studied. Cross-linked poly(propylene...Full Text Available

2009-01-01

306

Sterilization wave of the future: Microwaves  

Energy Technology Data Exchange (ETDEWEB)

Every cook knows that microwaves and metal don't mix. But scientists at the National Institute of Standards have devised a way to make them compatible. If it all pans out, hospitals may be able to sterilize medical instruments and waste in a device similar to a conventional microwave oven.

1989-11-05

307

Solid State Microelectrochemical Devices: Transistor and ...  

Science.gov (United States)

... Oliver, j. Egekeze, m. 7. Kennedy, JW Jorgenson, J. F. Parcher and ... 9. .:. W. Thackeray, HS White and MS Wrighton, J. Phys ... Dr. Harold H. Singerman ...

1989-10-01

308

Single Molecule Source Reagents for CVD of Beta Silicon Carbide.  

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

1991-01-01

309

Simulation of electron beam therapy employing cone collimation  

Energy Technology Data Exchange (ETDEWEB)

A simple device is described which is used to determine treatment distance and beam direction in electron therapy employing one collimation. A technique for the production of irregular field templates and localization films is given.

1983-07-01

310

Self-Referent Constructs and Medical Sociology: In Search of an Integrative Framework*  

UK PubMed Central (United Kingdom)

A theoretical framework centering on four classes of self-referent constructs is offered as a device for integrating the diverse areas constituting medical sociology. Guidance by this framework...Full Text Available

2007-06-01

311

Review of Reported Clinical Information System Adverse Events in US Food and Drug Administration Databases  

UK PubMed Central (United Kingdom)

SummaryBackgroundThe US FDA has been collecting information on medical devices involved in significant adverse advents since 1984. These reports have...Full Text Available

2011-01-01

312

Research and development of a new RF-assisted device for bloodless rapid transection of the liver: Computational modeling and in vivo experiments  

UK PubMed Central (United Kingdom)

BackgroundEfficient and safe transection of biological tissue in liver surgery is strongly dependent on the ability to address both parenchymal division and hemostasis simultaneously....Full Text Available

313

Regulatory compliance | Mott MacDonald  

Wastenet

...broad range of experience in designing and building research and development laboratories for products such as vaccines, blood and sera, biological products, medical devices, solid dosage forms , highly potent products and cytotoxic material. We also have experience in a range of modular laboratories for TSE research, ...

314

Radiation effects on MOS devices and radiation-hard CMOS technologies  

International Nuclear Information System (INIS)

Total-dose irradiation seriously damages MOS devices and their circuit performance. Threshold voltage shifts, transconductance degradation and increase in off-state leakage current are generally observed for irradiated devices. These instabilities are essentially due to positive and/or negative charge trapping in SiO_2 and interface trap generation at the SiO_2/Si interface. Radiation hardening of CMOS VLSIs is to eliminate these trapping effects, and for this purpose, special considerations for fabrication processes and layout design are necessary. In this paper, basic mechanisms for radiation-induced charge trapping and related effects on MOS devices are reviewed. Also discussed are radiation-hardening technologies from both fabrication-process and layout-design viewpoints. Using these technologies, 1 #mu#m radiation-hard CMOS gate arrays have been successfully developed. Experimental data taken for 2k-gate test chips ...

315

Quantum computing for physics research  

Energy Technology Data Exchange (ETDEWEB)

Quantum computers hold great promises for the future of computation. In this paper, this new kind of computing device is presented, together with a short survey of the status of research in this field. The principal algorithms are introduced, with an emphasis on the applications of quantum computing to physics. Experimental implementations are also briefly discussed.

2006-04-01

316

Psychometric evaluation of a radio electric auricular treatment for stress related disorders: a double-blinded, placebo-controlled controlled pilot study  

UK PubMed Central (United Kingdom)

BackgroundThe aim of this double-blind randomized study is to test the efficacy of a radio electric stimulator device using an auricular reflex therapy protocol for stress-related...Full Text Available

317

Proton storage ring (PSR) diagnostics and control system  

Energy Technology Data Exchange (ETDEWEB)

When any new accelerator or storage ring is built that advances the state of the art, the diagnostic system becomes extremely important in tuning the facility to full specification. This paper will discuss the various diagnostic devices planned or under construction for the PSR and their connection into the control system.

1983-01-01

319

Plasma jet ignition device  

Energy Technology Data Exchange (ETDEWEB)

An ignition device of the plasma jet type is disclosed. The device has a cylindrical cavity formed in insulating material with an electrode at one end. The other end of the cylindrical cavity is closed by a metal plate with a small orifice in the center which plate serves as a second electrode. An arc jumping between the first electrode and the orifice plate causes the formation of a highly-ionized plasma in the cavity which is ejected through the orifice into the engine cylinder area to ignite the main fuel mixture. Two improvements are disclosed to enhance the operation of the device and the length of the plasma plume. One improvement is a metal hydride ring which is inserted in the cavity next to the first electrode. During operation, the high temperature in the cavity and the highly excited nature of the plasma breaks down the metal hydride, liberating hydrogen which acts as an additional fuel to help plasma formation. ...

1985-01-15

320

Plasma Electric Potential Evolution at the Core and Edge of the TJ-II Stellarator and T-10 Tokamak  

International Nuclear Information System (INIS)

In this article are presented main results on electric potential investigations in stellarator/torsatron TJ-II and tokamak T-10 in a comparable regimes of device operation.

2006-01-01

321

Patient-specific reconstructed anatomies and computer simulations are fundamental for selecting medical device treatment: application to a new percutaneous pulmonary valve  

UK PubMed Central (United Kingdom)

Nowadays, percutaneous pulmonary valve implantation is a successful alternative to surgery for patients requiring treatment of pulmonary valve dysfunction. However, owing to the wide variety of implantation...Full Text Available

2010-06-28

322

One-year analysis of the iStent trabecular microbypass in secondary glaucoma  

UK PubMed Central (United Kingdom)

Purpose:To evaluate the midterm efficacy and safety of the iStent® glaucoma device in patients with secondary open-angle glaucoma.Patients...Full Text Available

2011-01-01

323

Noise Susceptibility of Cochlear Implant Users: The Role of Spectral Resolution and Smearing  

UK PubMed Central (United Kingdom)

The latest-generation cochlear implant devices provide many deaf patients with good speech recognition in quiet listening conditions. However, speech recognition deteriorates rapidly as the level of...Full Text Available

2005-03-01

324

Nanotechnology broadly refers to phenomenon and ... - NASA  

Science.gov (United States)

Jul 16, 2005 ... The purpose of this capability portfolio is to develop a roadmap for NASA to exploit .... 1.2.4-2: Some applications of nanotechnology to advanced EVA suits. ..... Power/Energy Storage: Materials and devices for energy storage and .... to 80 %), manufacturing costs (up to 50%) and enhancements in durability. ...

325

Microfluidic Devices Integrating Microcavity Surface-Plasmon-Resonance Sensors: Glucose Oxidase Binding-Activity Detection  

UK PubMed Central (United Kingdom)

We have developed miniature (≈1 μm diameter) microcavity surface-plasmon-resonance sensors (MSPRS), integrated them with microfluidics and tested...Full Text Available

2010-01-01

326

Method of describing dose distributions in computer design of teleradiotherapy  

International Nuclear Information System (INIS)

Method for description of X-ray radiation dose distribution based on semiempirical description of dose fields is suggested. At that dose field description parameters can be easily individualized for concrete X-ray device.

327

Measurement of body fat using leg to leg bioimpedance  

UK PubMed Central (United Kingdom)

AIMS—(1) To validate a leg to leg bioimpedance analysis (BIA) device in the measurement of body composition in children by assessment of its agreement with dual energy x...Full Text Available

2001-09-01

328

Large area, low capacitance Si(Li) detectors for high rate x-ray applications  

Energy Technology Data Exchange (ETDEWEB)

Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over ...

1992-10-01

329

Heat-driven liquid metal cooling device for the thermal management of a computer chip  

International Nuclear Information System (INIS)

The tremendous heat generated in a computer chip or very large scale integrated circuit raises many challenging issues to be solved. Recently, liquid metal with a low melting point was established as the most conductive coolant for efficiently cooling the computer chip. Here, by making full use of the double merits of the liquid metal, i.e. superior heat transfer performance and electromagnetically drivable ability, we demonstrate for the first time the liquid-cooling concept for the thermal management of a computer chip using waste heat to power the thermoelectric generator (TEG) and thus the flow of the liquid metal. Such a device consumes no external net energy, which warrants it a self-supporting and completely silent liquid-cooling module. Experiments on devices driven by one or two stage TEGs indicate that a dramatic temperature drop on the simulating chip has been realized without the aid of any fans. The higher the heat load, the larger ...

2007-08-07

330

Green primary explosives: 5-Nitrotetrazolato-N2-ferrate hierarchies  

UK PubMed Central (United Kingdom)

The sensitive explosives used in initiating devices like primers and detonators are called primary explosives. Successful detonations of secondary explosives are accomplished by suitable sources of...Full Text Available

2006-07-05

331

Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping  

Energy Technology Data Exchange (ETDEWEB)

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

2000-07-01

332

Experimental electrochemical capacitor test results  

Energy Technology Data Exchange (ETDEWEB)

Various electrochemical capacitors (ultracapacitors) are being developed for hybrid vehicles as candidate power assist devices for the fast response engine. The primary functions of the ultracapacitor are to level the dynamic power loads on the primary propulsion device and recover available energy from regenerative breaking during off-peak power periods. Ultracapacitors show promise toward being able to accept high regenerative pulses while exhibiting very high cycle life. This paper will present test data from selected US Department of Energy (DOE) supported ultracapacitor projects designed to meet the fast response engine requirements. Devices containing carbon, conducting polymers, and metal oxide electrode materials in combination with aqueous or organic electrolytes are being supported by the DOE. This paper will present and discuss testing data obtained from recent prototype capacitors supplied by Maxwell Energy ...

1997-11-01

333

Enhanced tube inner surface heat transfer device and method  

Science.gov (United States)

An inner surface substrate of metal tubes is provided with a single layer of randomly distributed metal bodies bonded to the substrate, spaced from each other, and substantially surrounded by the substrate to form body void space.

1979-05-15

334

Enhanced Biocompatibility of Porous Nitinol  

UK PubMed Central (United Kingdom)

Porous Nitinol (PNT) has found vast applications in the medical industry as interbody fusion devices, synthetic bone grafts, etc. However, the tendency of the PNT to corrode is anticipated to...Full Text Available

2009-08-01

335

Echocardiographic assessment and percutaneous closure of multiple atrial septal defects  

UK PubMed Central (United Kingdom)

Atrial septal defect closure is now routinely performed using a percutaneous approach under echocardiographic guidance. Centrally located, secundum defects are ideal for device closure but there is...Full Text Available

336

Early Experience in the Treatment of Intra-Cranial Aneurysms by Endovascular Flow Diversion: A Multicentre Prospective Study  

UK PubMed Central (United Kingdom)

IntroductionFlow diversion is a new approach to the endovascular treatment of intracranial aneurysms which uses a high density mesh stent to induce sac thrombosis. These devices...Full Text Available

337

Discovering and mapping low-amplitude dislocations by employing radioscopy methods  

Energy Technology Data Exchange (ETDEWEB)

Methodologies are given for conducting studies to discover and map break deformations in coal strata using various modifications on radiometry, together with the field for their use. Results that were obtained using the IKS-50 device are given.

1981-01-01

338

Development, field testing and implementation of automated hydraulically controlled, variable volume loading systems for reciprocating compressors  

Energy Technology Data Exchange (ETDEWEB)

Automated, variable volume unloaders provide the ability to smoothly load/unload reciprocating compressors to maintain ideal operations in ever-changing environments. Potential advantages provided by this load control system include: maximizing unit capacity, optimizing power economy, maintaining low exhaust emissions, and maintaining process suction and discharge pressures. Obstacles foreseen include: reliability, stability, serviceability and automation integration. Results desired include: increased productivity for the compressor and its operators, increased up time, and more stable process control. This presentation covers: system design features with descriptions of how different types of the devices were developed, initial test data, and how they can be effectively operated; three actual-case studies detailing the reasons why automated, hydraulically controlled, variable volume, head-end unloaders were chosen over other types of unloading ...

2003-07-01

339

Development of magnetic drive packless valves for commercial purpose  

Energy Technology Data Exchange (ETDEWEB)

A study on development of magnetic drive packless valves for commercial purpose showed the results as follows; 1. Study on the radial rays effecting to the permanent magnets -Measurement of the strength of Nd-magnets according to irradiation of radial rays. 2. Effects of temperature on the magnetic driving device -Temperature dependency of the Nd-casting magnets. -Effects of temperature on the heat releasing fins of high-temperature valve. 3. Optimization of torque -Arranging method of permanent magnets -Measuring method and results of torque. 4. Design, manufacture and test for the pressure-resisting structure of magnetic power transmitting device -Calculation and design for the flat circular plates under pressure of the magnetic power transmitting device -Design, manufacture and test for the pressure-resisting structure of magnetic power transmitting device -Comparison of the characteristics between ...

1995-09-01

340

Decrease in dust content and removal of sludge during drilling ascending shafts in coal  

Energy Technology Data Exchange (ETDEWEB)

Results are presented of analysis of the dust content of air and the resources for removing sludge at the mines of the Kuzbass during drilling of ascending shafts. A design is proposed for sludge removing devices with automatic opening and closing of the valve hinges.

1983-01-01

341

Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2{prime}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM{close_quote}s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM{close_quote}s on the Ag surface potential. {ital Ab} {ital initio} Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. ...

1996-11-01

342

Controlled Bidirectional Quantum Direct Communication by Using a GHZ State  

Science.gov (United States)

A controlled bidirectional quantum secret direct communication scheme is proposed by using a Greenberger-Horne-Zeilinger (GHZ) state. In the scheme, two users can exchange their secret messages simultaneously with a set of devices under the control of a third party. The security of the scheme is analysed and confirmed.

2006-07-01

343

Concrete peeling off device  

Energy Technology Data Exchange (ETDEWEB)

The present invention concerns a device for peeling off activated concretes in processing for discarding a reactor of a nuclear reactor facility. The device comprises a gyrotron for generation microwaves, an irradiator for irradiating output microwaves, a reflection mirror for reflecting and converging the microwaves and irradiating them to a material to be irradiated and a first rotating means for rotating the irradiator and the reflection mirror in parallel with the axis of the gyrotron while maintaining the positional relation between the irradiator and the reflection mirror. When the position of the microwaves irradiated on concrete walls are moved in a circumferential direction and the central axes of the rotational axis and the material to be irradiated are aligned, then the intensity of the irradiation of the microwaves at each of the irradiation points can be maintained constant without changing the focal distance of the reflected ...

1997-11-28

344

Complications of NewColorIris implantation in phakic eyes: a review  

UK PubMed Central (United Kingdom)

Purpose:To provide a literature review of implant related complications from bilateral NewColorIris implantation (Kahn Medical Devices, Panama City, Panama).Methods:A...Full Text Available

2011-01-01

345

Assessment of tennis elbow using the Marcy Wedge-Pro.  

UK PubMed Central (United Kingdom)

The Marcy Wedge-Pro (MWP), a device used in training by tennis players, was employed in the assessment of tennis elbow. The MWP was used to measure the ability of patients to perform wrist extension...Full Text Available

1993-12-01

346

Apparatus for opening and closing the gate of a coal tower  

Energy Technology Data Exchange (ETDEWEB)

A pneumatic device is in the form of a U-shaped frame, on which a prong is attached by using two pairs of levers. It also has a hydraulic or pneumatic cyclinder, whose rod is connected to one of the pairs of levers. All connections are hinges.

1981-08-23

347

Anchoring of a Single Molecular Rotor and Its Array on Metal Surfaces using Molecular Design and Self-Assembly  

UK PubMed Central (United Kingdom)

Functionalizing of single molecules on surfaces has manifested great potential for bottom-up construction of complex devices on a molecular scale. We discuss the growth mechanism for the initial layers...Full Text Available

348

An accurate high-speed single-electron quantum dot pump  

International Nuclear Information System (INIS)

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the ...

2010-07-01

349

AN ELECTRON BEAM DEVICE FOR REAL GAS FLOW ...  

Science.gov (United States)

... LC Cgraphic AncIy.;:i3 of Plasmia Flows;" Dept. of Aero-Astro, Enga., The Ohio S~ate Uni vevsity; ASI) TIch. DocutuutaL.'y lRepL. ...

1965-06-01

350

A stand for testing supports  

Energy Technology Data Exchange (ETDEWEB)

The stand is designed to test supports of development workings. To expand the test range for various types of supports, the cross pieces have fixing devices in the form of winches interacting by cables through blocks fastened to the stand body with the support hinges.

1980-07-30

351

A rare case of neuroleptic malignant syndrome presenting with serious hyperthermia treated with a non-invasive cooling device: a case report  

UK PubMed Central (United Kingdom)

IntroductionA rare side effect of antipsychotic medication is neuroleptic malignant syndrome, mainly characterized by hyperthermia, altered mental state, haemodynamic dysregulation,...Full Text Available

352

A custom-made guide-wire positioning device for Hip Surface Replacement Arthroplasty: description and first results  

UK PubMed Central (United Kingdom)

BackgroundHip surface replacement arthroplasty (SRA) can be an alternative for total hip arthroplasty. The short and long-term outcome of hip surface replacement arthroplasty mainly...Full Text Available

353

A Hybrid Capillary-Microfluidic Device for the Separation, Lysis, and Electrochemical Detection of Vesicles  

UK PubMed Central (United Kingdom)

The primary method for neuronal communication involves the extracellular release of small molecules that are packaged in secretory vesicles. We have developed a platform to separate, lyse, and...Full Text Available

2009-03-15

354

A Comparison of intra-oral digital imaging modalities: Charged Couple Device versus Storage Phosphor Plate  

UK PubMed Central (United Kingdom)

BackgroundThis in vitro study was conducted to compare the accuracy of two digital image receptors in identifying the location of tip of a fine endodontic file and radiographic apex...Full Text Available

2010-11-01

355

49 CFR 393.30 - Battery installation.  

Science.gov (United States)

... 2010-10-01 2010-10-01 false Battery installation. 393.30 Section 393.30...Devices, and Electrical Wiring § 393.30 Battery installation. Every storage battery on every vehicle, unless located in...

2010-10-01

356

Visible semiconductor lasers with the AlGaInP materials system  

International Nuclear Information System (INIS)

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

1988-11-02

357

Variable loading roller  

Energy Technology Data Exchange (ETDEWEB)

An automatic loading roller for transmitting torque in traction drive devices in manipulator arm joints includes a two-part camming device having a first cam portion rotatable in place on a shaft by an input torque and a second cam portion coaxially rotatable and translatable having a rotating drive surface thereon for engaging the driven surface of an output roller with a resultant force proportional to the torque transmitted. Complementary helical grooves in the respective cam portions interconnected through ball bearings interacting with those grooves effect the rotation and translation of the second cam portion in response to rotation of the first. 14 figs.

1988-01-21

358

Variable loading roller  

Energy Technology Data Exchange (ETDEWEB)

This patent describes an automatic loading roller for transmitting torque in traction drive devices in manipulator arm joints includes a two-part camming device having a first cam portion rotatable in place on a shaft by an input torque and a second cam portion coaxially rotatable and translatable having a rotating drive surface thereon for engaging the driven surface of an output roller with a resultant force proportional to the torque transmitted. Complementary helical grooves on the respective cam portions interconnected through ball bearings interacting with those grooves effect the rotation and translation of the second cam portion in response to rotation of the first.

1989-06-27

359

Telephone exchange Feutersoey - first pilot plant of the PTT with solar collectors  

Energy Technology Data Exchange (ETDEWEB)

In the course of this year six local exchange offices with alternative heating and hot water plants were started up in Switzerland. They are all of the same building type, designed for not more than 1000 telephone subscribers and for the same architectural conditions. However, the buildings are situated in different areas of the country and are thus subject to different environmental conditions. Solar collectors supplemented by electricity boilers are fitted to two of these objects. Heat pumps are operated in two other exchange offices while the last two are equipped with electric heating devices. For purposes of comparison two new test plants of the same size with oil heating devices are set up.

1981-01-01

360

Proton exchange membrane fuel cells with chromium nitridenanocrystals as electrocatalysts  

Energy Technology Data Exchange (ETDEWEB)

Polymer electrolyte membrane fuel cells (PEMFCs) are energy conversion devices that produce electricity from a supply of fuel, such as hydrogen. One of the major challenges in achieving efficient energy conversion is the development of cost-effective materials that can act as electrocatalysts for PEMFCs. In this letter, we demonstrate that, instead of conventional noble metals, such as platinum, chromium nitride nanocrystals of fcc structure exhibit attractive catalytic activity for PEMFCs. Device testing indicates good stability of nitride nanocrystals in low temperature fuel cell operational environment.

2007-07-01

361

On the influence of silicon oxide nanoparticles on the optical and surface properties of hybrid (inorganic-organic) barrier materials  

Energy Technology Data Exchange (ETDEWEB)

One of the major scientific and technological challenges for the production of flexible organic electronic devices is the device protection against atmospheric molecule permeation, which causes corrosion reducing its operation and lifetime. In this work, Spectroscopic Ellipsometry has been implemented to investigate the influence of silicon dioxide nanoparticles on the optical properties of hybrid polymers. The spectra analysis revealed valuable information about the electronic and vibrational response as well as the cross-linking mechanisms of these materials. The correlation of the optical properties with the synthesis parameters and the barrier response will contribute towards their optimization in order to be used as high barrier coatings for flexible organic electronics applications.

2009-10-01

362

Nuclear forensics  

International Nuclear Information System (INIS)

Nuclear forensics is the analysis of nuclear materials recovered from either the capture of unused materials, or from the radioactive debris following a nuclear explosion and can contribute significantly to the identification of the sources of the materials and the industrial processes used to obtain them. In the case of an explosion, nuclear forensics can also reconstruct key features of the nuclear device. Nuclear forensic analysis works best in conjunction with other law enforcement, radiological protection dosimetry, traditional forensics, and intelligence work to provide the basis for attributing the materials and/or nuclear device to its originators. Nuclear forensics is a piece of the overall attribution process, not a stand-alone activity

2010-02-01

363

Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion  

Energy Technology Data Exchange (ETDEWEB)

The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2 [mu]m radiation hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 KHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. In this paper the effects of different device terminal DC biases and channel geometries on the noise are described.

1992-08-01

364

Integrated photonic qubit quantum computing on a superconducting chip  

International Nuclear Information System (INIS)

We study a quantum computing system using microwave photons in transmission line resonators on a superconducting chip as qubits. We show that linear optics and other controls necessary for quantum computing can be implemented by coupling to Josephson devices on the same chip. By taking advantage of the strong nonlinearities in Josephson junctions, photonic qubit interactions can be realized. We analyze the gate error rate to demonstrate that our scheme is realistic even for Josephson devices with limited decoherence times. As a conceptually innovative solution based on existing technologies, our scheme provides an integrated and scalable approach to the next key milestone for photonic qubit quantum computing.

2010-06-01

365

Human experience with an endoluminal, endoscopic, gastrojejunal bypass sleeve  

British Library Electronic Table of Contents (United Kingdom)

Background This report describes the authors? experience with a unique endoluminal, endoscopically delivered and retrieved gastroduodenojejunal bypass sleeve, including short-term weight loss and changes in comorbidities. Methods A prospective, single-center trial was designed. The patients were morbidly obese individuals who met the National Institutes of Health criteria for bariatric surgery. The device used was a unique gastroduodenojejunal bypass sleeve secured at the esophagogastric junction with endoscopic and laparoscopic techniques and designed to create an endoluminal gastroduodenojejunal bypass. At completion of the trial, the device was explanted with endoscopic retrieval. The primary end points were safety and incidence of adverse events. The secondary outcomes included the per...

2011-01-01

366

Freeze protection valve and system  

Energy Technology Data Exchange (ETDEWEB)

The present invention is a device for a solar heating system having a solar collector, a storage tank connected to the solar collector, a pump for circulating liquid from the tank to the solar collector, a supply of liquid at a temperature above freezing and a connection from the supply of liquid to the solar collector for replacing any liquid lost from said solar collector. The device comprises a sensor for sensing the temperature of liquid in the solar collector, and a valve for bleeding liquid from the solar collector when the sensed temperature falls below a predetermined minimum whereby cool liquid in the solar collector is automatically replaced by liquid at a temperature above freezing.

1985-12-10

367

Formal Analysis of UMTS Privacy  

CERN Document Server

The ubiquitous presence of mobile communication devices and the continuous development of mo- bile data applications, which results in high level of mobile devices' activity and exchanged data, often transparent to the user, makes privacy preservation an important feature of mobile telephony systems. We present a formal analysis of the UMTS Authentication and Key Agreement protocol, using the applied pi-calculus and the ProVerif tool. We formally verify the model with respect to privacy properties. We show a linkability attack which makes it possible, for individuals with low-cost equipment, to trace UMTS subscribers. The attack exploits information leaked by poorly designed error messages.

2011-01-01

368

Emergency core cooling device for a reactor  

International Nuclear Information System (INIS)

Purpose : To obtain an emergency core cooling device in a FBR type reactor by utilizing heat pipes which are not actuated at usual operation condition but actuated reliably upon emergency. Constitution : A system for injecting heat medium into heat pipes is provided. By injecting the heat medium into the heat pipes upon emergency to actuate the heat pipes, the reactor core is cooled. During normal reactor operation, the inside of the heat pipes is evacuated from a vacuum pump and no heat medium is filled therein, whereby unnecessary heat loss during the normal operation can be prevented. (Ikeda, J.).

1982-01-24

369

Effects of postulated event devices on normal operation of piping systems in nuclear power plants. Technical report  

Energy Technology Data Exchange (ETDEWEB)

This report considers the effect of pipe-whip restraints and snubbers on the normal operation of piping systems in nuclear power plants. Also considered are the effect of these postulated event devices on reliability, economics, and the exposure of plant personnel to radiation. Field data were gathered from three nuclear power plants that had applied for Operating Licenses. Criteria, design philosophies, and data were obtained from the respective nuclear steam system suppliers, architects-engineers and utilities.

1981-05-01

370

Development of a high current negative ion source for fusion application  

Energy Technology Data Exchange (ETDEWEB)

Negative ion based neutral beam injector is one of the most attractive heating system in future fusion reactors. In realizing the system, the crucial device which has to be developed is a high intensity negative ion source. Significant progress has been made on the negative ion source in these years. Among them, a few ampere negative ion beam were produced stably, while the divergence of negative ion beams becomes to be as low as < 10 mrad. We consider these results are demonstrating the potential of the negative ion source for the heating device in future reactors.

1988-11-01

371

Dampers, fluidics and the failsafe fallacy [fire protection  

International Nuclear Information System (INIS)

The fire protection practices adopted at nuclear power stations generally follow the well established principles used throughout industry. Unfortunately, there is one particular area - the interaction with heating, ventilation and air conditioning (HVAC) services - where nuclear power stations pose a seemingly insoluble conflict: that between the need to contain and the need to ventilate. Now, however, solid state fire dampers using power fluidics may promise a solution. One of the key characteristics of a fluidic device is that it is 'solid state', i.e. it has no moving parts. Because of this, its inherent reliability is orders of magnitude greater than a mechanical device. (U.K.).

372

Assessing the profitability of reactive power compensation devices  

Energy Technology Data Exchange (ETDEWEB)

A probabilistic method for assessing the profitability of reactive power compensation devices such as capacitors, static VAR compensators and generators, which improve network security, was described. Since network development is limited by environmental constraints, power networks are operated close to their limits. Because of this fact transmission network planning increasingly relies on techno-economic models to improve network security and profitability. The proposed method consists of analyzing large numbers of constrained power system states, extracted from power system simulation exercises. The paper describes details of the method and provides an example of a numerical application on a part of the French power transmission system. 10 refs., 8 figs.

1997-12-31

373

Analytical laboratory and mobile sampling platform. Progress report, October 1, 1994--December 31, 1994  

Energy Technology Data Exchange (ETDEWEB)

This paper is a quarterly report describing the use of a new soil gas collection device which allows the collection of soil gas in the field for later analysis in the laboratory. It describes the installation of this sampling device and the procedure for setting the probe, extraction of soil gas beneath the surface, and sealing of the soil gas for transport. The sites used for initial testing was the top of Yucca Mountain and Crystal Spring in Ash Meadows National Wildlife Refuge. The results from this initial test showed no volatile matter present in the soil at these locations.

1994-12-31

374

A study on the response time characteristics related to shock control in the hydraulic system using the fluid device  

International Nuclear Information System (INIS)

Control of pressure transients in a hydraulic system may be important and necessary to avoid failures and to improve the efficiency of operation. Flow restricting devices can result in a decrease in the peak pressure, but may change the response time. The response time has an important effect on both operator and operator perceived smoothness. The response time should correspond to how fast a system responds to a given disturbance at the system boundary. Occasionally the appropriate response time is not easily determined. This study is on the response time characteristics in the hydraulic system studied for the control of response time.

2001-11-01

375

Solution processable fluorenyl hexa-peri-hexabenzocoronenes in organic field-effect transistors and solar cells  

Energy Technology Data Exchange (ETDEWEB)

The organization of organic semiconductor molecules in the active layer of organic electronic devices has important consequences to overall device performance. This is due to the fact that molecular organization directly affects charge carrier mobility of the material. Organic field-effect transistor (OFET) performance is driven by high charge carrier mobility while bulk heterojunction (BHJ) solar cells require balanced hole and electron transport. By investigating the properties and device performance of three structural variations of the fluorenyl hexa-peri-hexabenzocoronene (FHBC) material, the importance of molecular organization to device performance was highlighted. It is clear from {sup 1}H NMR and 2D wide-angle X-ray scattering (2D WAXS) experiments that the sterically demanding 9,9-dioctylfluorene groups are preventing {pi}-{pi} intermolecular contact in the hexakis-substituted FHBC 4. For ...

2010-03-24

376

A wirelessly powered and controlled device for optical neural control of freely-behaving animals.  

Science.gov (United States)

Optogenetics, the ability to use light to activate and silence specific neuron types within neural networks in vivo and in vitro, is revolutionizing neuroscientists' capacity to understand how defined neural circuit elements contribute to normal and pathological brain functions. Typically, awake behaving experiments are conducted by inserting an optical fiber into the brain, tethered to a remote laser, or by utilizing an implanted light-emitting diode (LED), tethered to a remote power source. A fully wireless system would enable chronic or longitudinal experiments where long duration tethering is impractical, and would also support high-throughput experimentation. However, the high power requirements of light sources (LEDs, lasers), especially in the context of the extended illumination periods often desired in experiments, precludes battery-powered approaches from being widely applicable. We have developed a headborne device weighing 2 g capable of wirelessly ...

2011-06-23

377

Thermal annealing effect on optical properties of electrodeposited ZnO thin films  

Energy Technology Data Exchange (ETDEWEB)

ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band after annealing at 200 {sup 0}C. A visible region emission band at ...

2008-10-07

378

Reactive magnetron sputtering of hard Si-B-C-N films with a high-temperature oxidation resistance  

International Nuclear Information System (INIS)

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. The energy and flux of ions bombarding the growing films were ...

2005-11-01

379

Materials design for semiconductor spintronics by ab initio electronic-structure calculation  

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping treatment. However, Mn-, Fe-, Co- or Ni-doped ZnS, ZnSe and ZnTe ...

2003-04-01

380

Magnetic and transport properties of Ba_2Co_9O_1_4 and Ba_1_._9A_0_._1Co_9O_1_4 (A=La or Na)  

International Nuclear Information System (INIS)

The valence and spin-state distributions of Co ions and the complex structure of antiferromagnetic Ba_2Co_9O_1_4 have led to the suggestion that doped Ba_2Co_9O_1_4 compounds may be good thermoelectric materials. We have checked this suggestion by measuring the magnetic properties as well as the transport properties of nominal Ba_1_._9A_0_._1Co_9O_1_4 (A=La or Na). We show that although all compounds are indicated to be single phase by powder X-ray diffraction analysis, they are all p-type polaronic conductors with low mobile-hole concentrations. Magnetic-susceptibility data of the parent and La-doped compounds give evidence of a second magnetic phase with ferromagnetic order setting in below 215 K; but this second phase is not seen in the Na-doped sample. We conclude that the structure is stabilized by oxidation and that cation exolution from the Ba_2Co_9O_1_4 structure creates cation vacancies that oxidize the high-spin (HS) Co(II) to the intermediate-spin ...

2010-11-01

381

Investigation of ultrafast photothermal surface expansion and diffusivity in GaAs via laser-induced dynamic gratings  

Energy Technology Data Exchange (ETDEWEB)

This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, ...

1992-04-01

382

Electric-field dependence of electroreflectance and photocurrent spectra at visible wavelengths in MOVPE-grown InAlGaP multiple strained quantum-well structures  

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for visible-wavelength optical modulator ...

1993-12-31

383

Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case ...

2002-01-01

384

Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si  

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO_2 cover film, amount of dose decreases with the ...

2002-01-01

385

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO_2 composite/p-AlGaN heterojunction light-emitting diodes  

International Nuclear Information System (INIS)

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at #lambda##approx#380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p- Al_0_._1_2Ga_0_._8_8N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_0_._1_2Ga_0_._8_8N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO_2 composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated ...

2009-04-22

386

Transient optical and electrical effects in polymeric semiconductors  

Energy Technology Data Exchange (ETDEWEB)

Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to expanding the knowledge on the physical ...

2009-05-28

387

Predicting optimum vortex tube performance using a simplified CFD model  

International Nuclear Information System (INIS)

The Ranque-Hilsch tube is a particular type of vortex tube device. The flow enters the device tangentially near one end and exits from the open ends of the tube. The inlet air is of a uniform temperature throughout while the outputs are of different temperatures. One outlet is hotter and the other is colder than the inlet air. This device has no moving parts and does not require any additional power for its operation other than that supplied to the device to compress the inlet air. It has, however, not been widely used, mainly because of its low efficiency. In this paper, a simplified 2-dimensional computational fluid dynamics model for the flow in the vortex tube is developed using FLUENT. This model makes use of the assumption of axial symmetry throughout the entire flow domain. Compared to a three-dimensional computational solution, the simplified model requires significantly less computational time. ...

2004-05-09

388

A high-power millimeter-wave sheet beam free-electron laser amplifier  

International Nuclear Information System (INIS)

The results of experiments with a short period (9.6 mm) wiggler sheet electron beam (1.0 mm x 2.0 cm) millimeter-wave free electron laser (FEL) amplifier are presented. This FEL amplifier utilized a strong wiggler field for sheet beam confinement in the narrow beam dimension and an offset-pole side-focusing technique for the wide dimension beam confinement. The beam analysis herein includes finite emittance and space-charge effects. High-current beam propagation was achieved as a result of extensive analytical studies and experimental optimization. A design optimization resulted in a low sensitivity to structure errors and beam velocity spread, as well as a low required beam energy. A maximum gain of 24 dB was achieved with a 1-kW injected signal power at 86 GHz, a 450-kV beam voltage, 17-A beam current, 3.8-kG wiggler magnetic field, and a 74-period wiggler length. The maximum gain with a one-watt injected millimeter-wave power was observed to be over 30 dB. The lower gain at higher ...

389

WWW expert system on producer gas cleaning  

Energy Technology Data Exchange (ETDEWEB)

The University of Groningen (RUG) has developed an expert system on cleaning of biomass producer gas. This work was carried out in close co-operation with the Biomass Technology Group B.V. (BTG) in Enschede, The Netherlands within the framework of the EC supported JOR3-CT95-0084 project. The expert system was developed as a tool for the designer-engineer of downstream gas cleaning equipment and consists of an information package and a flowsheet package. The packages are integrated in a client/server system. The flowsheeting package of the expert system has been designed for the evaluation of different gas cleaning methods. The system contains a number of possible gas cleaning devices such as: cyclone, fabric filter, ceramic filter, venturi scrubber and catalytic cracker. The user can select up to five cleaning steps in an arbitrary order for his specific gas cleaning problem. After specification of the required design parameters, the system calculates the main ...

1999-07-01

390

Validation of WIMS-AECL reactivity device calculations for CANDU reactor  

Energy Technology Data Exchange (ETDEWEB)

An important component of the overall program to validate WIMS-AECL for use with RFSP in the analysis of CANDU-6 reactors for design and safety analysis calculations is the validation of calculations of incremental cross sections used to represent reactivity devices. A method has been developed for the calculation of the three-dimensional neutron flux distribution in and around CANDU reactor fuel channels and reactivity control devices. The methods is based on one- and two dimensional transport calculations with the WIMS-AECL lattice cell code, SPH homogenization, and three-dimensional flux calculations with finite-difference diffusion theory using the MULTICELL code. Simulations of Wolsung 1 Phase-B commissioning measurements and Point Lepreau restart tests have been performed, as a part of the program to validate WIMS-AECL lattice cell calculations for application to CANDU reactor simulations in RFSP. The incremental cross section properties ...

1997-06-01

391

Ultra high-speed (508 MHz) beam position digital feedback system  

Energy Technology Data Exchange (ETDEWEB)

The B-Factory which is constructed by National Laboratory for High Energy Physics is the device for elucidating the breakdown of symmetry of matter and antimatter by studying the behavior of B mesons which are generated in large quantity when the electrons and the positrons which are accelerated to light velocity level are collided. In order to maintain electron beam-positron beam bunch circling the ring at light velocity stably, the instability of the coupled bunch must be overcome. For this purpose, the ultrahigh speed beam position digital feedback control system was developed. This system is composed of the high speed input-output substrate using GaAs LSI, the feedback computation substrate using complementary metal oxide semiconductor and the memory mounted on it, and the real time operation device. The development of both substrates and their functions are explained. The real time data collection and the change of computation parameters ...

1997-02-01

392

The response of some TL albedo neutron dosimeters  

International Nuclear Information System (INIS)

As part of a general study of personnel neutron dosimetry systems, three British and two German TL albedo dosimeters were compared. They range from simple albedo devices to multi-element devices which detect combinations of incident and albedo neutrons. They were exposed to beams of mono-energetic neutrons, a thermal neutron column and a "2"5"2Cf source. The variation in response with neutron energy above 0.1 MeV was similar for all dosimeters. The resuls show that in general multi-component dosimeters fo not provide enough information to deduce the effective energy of incident neutrons. The choice of single or multi-element dosimeters for particular types of environment is discussed. The Harvey dosimeter has the most acceptable thermal neutron response of the simpler devices. For neutron energies below 0.5 MeV its response varies roughly as the cosine of the angle of incidence but is more complex at higher energies. ...

393

The potential of III-V semiconductors as terrestrial photovoltaic devices  

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on ...

2006-07-01

394

Single-crystal microwires based on doped Bi for anisotropic thermoelectric devices  

International Nuclear Information System (INIS)

We have investigated the possibility to use a microwire of BiSn to design an anisotropic thermoelectric generator. The glass-coated microwire of pure and Sn-doped bismuth was obtained by the Ulitovsky method; it was a cylindrical single-crystal with orientation (1011) along the wire axis; the C3 axis was inclined at an angle of 70 degrees to the microwire axis. It is found that doping of bismuth wires with tin increases the thermopower anisotropy in comparison with Bi by a factor of 2 - 3 in the temperature range of 200-300 K. For a Bi microwire with a core diameter of 10 ?m with a glass coating with outer diameter of 35 ?m, the transverse thermopower is ? 150 ?V/(K*cm); for BiSn, 300 ?V/(K*cm). The design of an anisotropic thermogenerator based on BiSn microwire is proposed. The miniature thermogenerator will be efficient for power supply of devices with low useful current. In addition to the considerable thermopower anisotropy of BiSn wires in a glass coating, ...

2011-07-07

395

Process for producing a methane-rich gas for natural gas substitution. Verfahren zur Herstellung eines mit Erdgas austauschbaren methanreichen Gases  

Energy Technology Data Exchange (ETDEWEB)

A patent is claimed for a process by which a low-hydrogen gas containing at least 90 percent by volume of methane which is suited for natural gas substitution is produced by transformation of vaporizable hydrocarbons with the aid of steam in the presence of a catalyst containing nickel, at temperatures of 350 to 600/sup 0/C and at increased pressure. Hydrocarbons and steam are supplied to the reaction in mixed form with recycle product gas. Per kilogramme of hydrocarbons to be converted in the high btu gas reactor, less than 1 kilogramme of fresh steam is needed. High btu gas is fed back from the high btu gas reactor to the input end of the same via a gas cycle comprising a cooler, a carbon dioxide absorption device, and a saturator. Between the carbon dioxide absorption device and the saturator a product gas is branched off which may pass a methanation device.

1983-04-14

396

Optimizing the acquisition time profile for a planar integral measurement system with a spinning slat collimator  

International Nuclear Information System (INIS)

This article considers a hypothetical imaging device with a spinning slat collimator that measures parallel-planar-integral data from an object. This device rotates around the object 180 deg. and stops at N positions uniformly distributed over this 180 deg. . At each stop, the device spins on its own axis 180 deg. and acquires measurements at M positions uniformly distributed over this 180 deg. . For a fixed total imaging time, an optimal distribution of the scanning time among the data measurement locations is searched by a nonlinear programming method: Nelder-Mead's simplex method. The optimal dwell time is approximately proportional to the weighting factor in the backprojector of the reconstruction algorithm. By using an optimal dwell-time profile, the reconstruction signal-to-noise ratio has a gain of 23%-24% for the filtered backprojection algorithm and a gain of 10%-18% for the iterative algorithms, compared with the ...

2005-09-01

397

On-line analysis of chemical composition using an FT-Raman spectrometer in the near-ir  

Science.gov (United States)

Newly commercialized Fourier transform Raman spectroscopic instrumentation provides a simpler alternative for vibrational spectroscopic analysis. Instrument vendors currently design for laboratory use, but there are many potential process applications of these stable, easy to use instruments. Raman spectroscopy is highly suited to analysis of aqueous samples. Near infrared excitation minimized fluorescence interference and allows for remote operation via fiber optic probes. The Department of Energy has funded research at the Measurement and Control Center to establish the utility of this method for on-line composition analysis in distillation columns. Laboratory evaluation and instrument employs an air-cooled laser and a thermoelectrically cooled detector. The device is mounted on a three by foot cart for convenient location in control rooms. Current fiber optic extension cables allow for analysis in a cell thirty five meters from the instrument. Application of the ...

1992-01-01

398

Micromachining using a focused ion beam miller  

International Nuclear Information System (INIS)

Full text: The focused ion beam (FIB) miller is becoming well established as a machine for the structural analysis of materials and for the rapid preparation of transmission electron microscope specimens. It has also been used for some time in the semiconducting materials industry for the analysis, repair and redesign of device materials. However, one emerging technique is the use of the FIB for micromachining. The FIB software can also be used to manufacture and machine components. This process can occur through converting software, typically in the form of bitmaps or TIF files, to proprietary 'stream' files. These files allow, often complex, patterns to be generated and milled into the specimen and thus the generation of micro-electromechanical systems. Frequently, this involves largely two-dimensional patterns and structures, however, more complex patterns and file types can be generated which allow, for example, device prototyping or the ...

2002-02-01

399

Laser eye protection. Interim report, July 1989-January 1990  

Energy Technology Data Exchange (ETDEWEB)

Laser applications have proliferated in recent years and, as to be expected, their presence is no longer confined to the laboratory or places where access to their radiation can be easily controlled. One obvious application where this is so is in military operations where various devices such as laser range finders, target designators, and secure communications equipment elevate the risk of exposure, specifically eye exposure, to unacceptable levels. Although the need for eye protection in the laboratory and other controlled areas has been appreciated since the invention of the laser, the use of lasers in circumstances where safety or the risk of temporary loss of vision, which can not always be ensured by administrative procedures, has made adequate eye protection essential. It is the critical nature of many military operations that has driven the search for eye protection against both nuclear and laser radiation. At the same time, the requirement to maintain ...

1990-01-01

400

Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors  

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in order to ensure that ...

1992-08-28

401

IN VACUUM UNDULATOR TASK FORCE REPORT  

Energy Technology Data Exchange (ETDEWEB)

The Green-Chasman lattice, which is the basis for both NSLS storage rings, was conceived with insertion devices in mind. Long, field-free straight sections were provided in the design. The electron optics were chosen so that these sections had zero dispersion and the effects of new magnetic structures placed in these regions would have minimal effect on the emittance of the electron beam. This design concept has been followed by all high-brightness rings which were built subsequent to the NSLS. The X-Ray Ring straight sections also have a very small vertical {beta} function, in addition to the zero dispersion. This was done to optimize the brightness of wiggler sources. There is a further benefit however. The {beta} function determines the beam size and divergence at a particular point in the storage ring lattice. The size is proportional to {radical}{beta} and the divergence is proportional to 1/{radical}{beta}. Thus the electron beam is very small at the center ...

1998-06-01

402

GaAs concentrator cell production cost analysis  

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

1992-12-01

403

First plasma experiment on spherical tokamak device UTST  

International Nuclear Information System (INIS)

The UTST (University of Tokyo Spherical Tokamak) device was constructed for the purpose of exploring the formation of ultra-high beta ST (Spherical Tokamak) plasma using the double null plasma merging method. When two plasmas merge together to form a single plasma, magnetic field lines reconnect, and the magnetic field energy is converted to the plasma kinetic energy, increasing the plasma beta. The merging start-up has been demonstrated in the TS-3/4, START and MAST devices using coils inside the vacuum vessel and TS-3 plasma obtained 50% beta. In order to demonstrate the start-up in a more reactor relevant situation, UTST has all poloidal field coils outside the vacuum vessel. The first plasma experiment on the UTST was performed from December, 2007. In the result, the plasma obtained 10 kA by using only outer PF coils and single ST was generated at the lower area (z=-0.3 - -1.0[m]) close to a washer gun. This result suggests that another ...

2009-04-01

404

FIB implantation induced site-selectively grown self-assembled InAs QDs in a light emitting #mu#-diode  

International Nuclear Information System (INIS)

We present an approach for fabrication of intentionally positioned epitaxial InAs QDs in a micron sized light emitting diode. For site-selective growth, a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation technology in an all-ultra-high-vacuum (UHV) setup has been employed. Single dot occupancy of almost 55 % on FIB patterned nano-depressions was successfully achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding these QDs in the intrinsic part of a GaAs-based micron sized p-i-n junction device. Few or single dot are expected to be electrically addressed in these devices. We report results from electroluminescence (EL) measurement which proves the single dot characteristics of our device. The EL spectra consist of sharp emission lines and their dependence on injection current shows linear ...

2010-03-21

405

Evaluation of the humidification requirements of new proton exchange membranes for fuel cells  

Science.gov (United States)

Measurements of PEM fuel cell device performance were made with different gas inlet temperatures and relative humidity using a newly-designed test fixture. Significant improvement in device performance was observed when the fuel inlet temperature was increased above the operating temperature of the cell. These measurements were then correlated to a model to describe energy and mass transport processes. Proton exchange membrane (PEM), fuel cells--the focus of this study--use an ion conducting polymer, especially polyperfluorosulfonic acid materials. These polymer materials, when imbibed with water, exhibit solution-like properties, but because the anions are chemically bound to the polymeric structure, the electrolyte is contained. Importantly, product water removal is simplified, as electrolyte dilution is not a concern. However, the proton transport rate is a function of the polymer geometry, which is set, in part, by the polymer water ...

1995-05-01

406

Enhanced photoconductivity and fine response tuning in nanostructured porous silicon microcavities  

Energy Technology Data Exchange (ETDEWEB)

We used light confinement in optical microcavities to achieve a strong enhancement and a precise wavelength tunability of the electrical photoconductance of nanostructured porous silicon (PS). The devices consist of a periodic array of alternating PS layers, electrochemically etched to have high and low porosities - and therefore distinct dielectric functions. A central layer having a doubled thickness breaks up the symmetry of the one-dimensional photonic structure, producing a resonance in the photonic band gap that is clearly observed in the reflectance spectrum. The devices were transferred to a glass coated with a transparent SnO{sub 2} electrode, while an Al contact was evaporated on its back side. The electrical conductance was measured as a function of the photon energy. A strong enhancement of the conductance is obtained in a narrow (17nm FWHM) band peaking at the resonance. We present experimental results of the angular dependence of ...

2009-05-01

407

Emergency reactor core cooling device  

International Nuclear Information System (INIS)

The device of the present invention improves reactor safety by suppressing lowering of water level in a shroud which surrounds a reactor core, even upon occurrence of rupture of pipelines in an emergency reactor core cooling system in a recycling pump-incorporated type reactor. Namely, an opening of each of cooling systems which forms the emergency reactor core cooling device in a reactor pressure vessel is disposed above the upper end of the reactor core. Further, it also comprises an independent high pressure water injection system, gravitational dropping type water injection system and an automatic depressurization system. With such a constitution, even if rupture of pipelines in the system should be assumed, coolants never flow directly from the shroud which surrounds the reactor core. In addition, there are no pipelines to be ruptured below the upper end of the reactor core with respect to the structure. Accordingly, a great amount of ...

1993-03-16

408

Emergency core cooling device  

International Nuclear Information System (INIS)

In an existent emergency reactor core cooling device, if a ruptures should occure in a pipeline of a gravitational dropping type reactor core cooling system pool (GDCS) due to some or other causes, a portion of GDCS pool water was flown out of the ruptured port and could not be used for reactor core cooling. Then, a difference pressure detector is disposed to a GDCS pipeline at the inlet of a reactor pressure vessel. When it is judged by the detector, that coolants flow to the outside of the injection pipeline, an injection value disposed to the GDCS pipeline is closed by the difference pressure signal. Even if a rupture should occur on the side of the pressure vessel at downstream to the check value of the GDCS pipeline, since backflow is caused at the pressure container inlet of the GDCS pipeline with the rupture port, the rupture is detected by the difference pressure detector to close the injection valve. Therefore, loss of the GDCS pool water is prevented and ...

1990-10-29

409

Device for removing drilling fines from a well head  

Energy Technology Data Exchange (ETDEWEB)

The device for removing drilling fines from the well head includes a support disk encompassing the sucker rod of the drilling machine with frame made in the form of a dish with inner conical surface, and overturned truncated cone located in the dish of the support disk with the formation between them of a ring guide slit. In order to improve the effectiveness of removing the drilling fines and convenience of operation by excluding heavy manual auxiliary operations to clean the well head and to move the device from one well to another, it is equipped with a mechanism for suspension with a drive. The inner conical surface of the dish is equipped with slide blocks, while the overturned truncated cone is equipped with projections. The suspension mechanism is made in the form of a hydrocylinder and two pairs of levers connected in pairs by means of hinges. The hinges of each pair of levers are connected to the hydrocylinder, and the levers are ...

1982-01-01

410

Development of swing-free / shock free crane  

Energy Technology Data Exchange (ETDEWEB)

To develop the automatized crane and to apply the relevant technology to nuclear power plants, in this project and automatized crane control system is developed along with a swing and shock crane. Also, this technology has been transferred to Bando Machinery Co. Ltd. The drive mechanism of crane is designed by adopting vector drives which provide soft acceleration and deceleration characteristics. Also, radio modems and a long-range laser displacement sensor which are commercially available are introduced to accommodate the large scaled crane systems. Also, several devices are developed for the automation of crane system. These are a crane controller, a supervisory controller, a angle measuring device, and laser localizer, a drum grapple device, and crane supervisory program. The performance of developed crane system is revealed to rapidly reduce the residual swingof the transported object and precisely controls the object ...

1999-04-01

411

Development of Efficient UV-LED Phosphor Coatings for Energy Saving Solid State Lighting  

Energy Technology Data Exchange (ETDEWEB)

The University of Georgia, in collaboration with GE Global Research, has investigated the relevant quenching mechanism of phosphor coatings used in white light devices based on UV LEDs. The final goal of the project was the design and fabrication of a high-efficacy white light UV-LED device through improved geometry and optimized phosphor coatings. At the end of the research period, which was extended to seamlessly carry over the research to a follow-up program, we have demonstrated a two-fold improvement in the conversion efficiency of a white light LED device, where the increase efficacy is due to both improved phosphor quantum efficiency and lamp geometry. Working prototypes have been displayed at DOE sponsored meetings and during the final presentation at the DOE Headquarters in Washington, DC. During the first phase of the project, a fundamental understanding of quenching processes in UV-LEDs was obtained, and the ...

2006-05-15

412

Development of Efficient UV-LED Phosphor Coatings for Energy Saving Solid State Lighting  

International Nuclear Information System (INIS)

The University of Georgia, in collaboration with GE Global Research, has investigated the relevant quenching mechanism of phosphor coatings used in white light devices based on UV LEDs. The final goal of the project was the design and fabrication of a high-efficacy white light UV-LED device through improved geometry and optimized phosphor coatings. At the end of the research period, which was extended to seamlessly carry over the research to a follow-up program, we have demonstrated a two-fold improvement in the conversion efficiency of a white light LED device, where the increase efficacy is due to both improved phosphor quantum efficiency and lamp geometry. Working prototypes have been displayed at DOE sponsored meetings and during the final presentation at the DOE Headquarters in Washington, DC. During the first phase of the project, a fundamental understanding of quenching processes in UV-LEDs was obtained, and the ...

2006-05-01

413

Defense Threat Reduction Agency Radiochemical Needs  

International Nuclear Information System (INIS)

The United States Government (USG) first developed nuclear forensics-related capabilities to analyze radiological and nuclear materials, including underground nuclear test debris and interdicted materials. Nuclear forensics is not a new mission for Department of Defense (DoD). The department's existing nuclear forensics capability is the result of programs that span six (6) decades and includes activities to assess foreign nuclear weapons testing activities, monitor and verify nuclear arms control treaties, and to support intelligence and law enforcement activities. Today, nuclear forensics must support not only weapons programs and nuclear smuggling incidents, but also the scientific analysis and subsequent attribution of terrorists' use of radiological or nuclear materials/devices. Nuclear forensics can help divulge the source of origin of nuclear materials, the type of design for an interdicted or detonated device, as well as the pathway of ...

2009-08-19

414

Characterization of 3D thermal neutron semiconductor detectors  

International Nuclear Information System (INIS)

Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties of 3D structures. ...

2007-06-11

415

Useful vacancies: Positron beam interrogation of fluorine-vacancy complexes in semiconductor device structures  

Energy Technology Data Exchange (ETDEWEB)

The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.

2008-10-31

416

Use of primary electron counting for detection of ultrasoft x-rays with a low-pressure multistep gaseous detector  

International Nuclear Information System (INIS)

The use of primary electron counting techniques as an alternative to the more usual parallel plate avalanche chamber that has been employed in soft x-ray scattering experiments is being investigated at the National Synchrotron Light Source. The theoretical aspects of primary electron counting and motivation behind building a primary electron counting detector are described, as well as characteristics and future improvements of the device constructed at the NSLS. The detector consists of a low electric field drift region and a low pressure multistep avalanche region which can be operated with two or three stages of electron multiplication. The device has worked well in extensive tests as a simple parallel plate avalanche chamber, providing energy resolutions of 58% and 43% at 277 and 500 eV, respectively. Operated as a primary electron counter, preliminary results show an energy resolution of 38% at 500 eV.

417

Three-terminal electric transport measurements on gold nano-particles combined with ex situ TEM inspection  

International Nuclear Information System (INIS)

We have fabricated nanometer-spaced electrodes on electron-transparent silicon nitride membranes. A thin Cr/Au layer is evaporated on the backside of the membrane which serves as a gate electrode. Using these devices, we have performed three-terminal electron transport measurements on gold nano-particles at liquid helium temperature. Coulomb Blockade features have been observed and the capacitance to the gate has been extracted. After transport measurements, the Cr/Au back gate is removed and the devices are inspected with a transmission-electron microscope (TEM). TEM inspection reveals the presence of a few nano-particles in the nanogap, which is in agreement with the transport measurements. In addition, the nano-particle size as observed by TEM coincides with the one estimated from the gate capacitance value.

2009-10-14

418

Thermal and radiation losses in a linear device  

Energy Technology Data Exchange (ETDEWEB)

An analysis is presented of the electron temperature in a linear device which includes the effect of thermal conduction, heat flux limit, radiation, and end plugs. It is found that the thermal conduction and the heat flux limit are dominant in the initial phase of cooling, while the later phase is almost completely controlled by radiation that spatially homogenizes the temperature distribution. In the case of bremsstrahlung, within the frame of the present model, the temperature decays to zero in a finite time. This process takes the form of a cooling wave that moves from the ends of the column to the center. Impurities cause a milder, exponential decay, which is still much faster than the algebraic conduction decay. The thermal effectiveness of the end plugs is described by a convective transfer coefficient h/sub p/. Its scaling law (in terms of the coupled plamsa-plug system) reveals that a very high plug-plasma density ratio provides a simple way to ...

1980-11-01

419

Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670--690-nm vertical-cavity surface-emitting lasers  

Science.gov (United States)

The authors report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, they demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50 C from a 15-{micro}m-diameter device.

1995-07-01

420

Temperature problems in mine rescue  

Energy Technology Data Exchange (ETDEWEB)

Describes temperature and humidity sensing devices used in mine rescue operations. Chemical indicators use chemical substances that melt at predetermined temperatures and display the actual temperature in the range of 40-50 C. Electronic temperature monitoring devices release acoustic signals as soon as a temperature of 40 or 45 C has been exceeded. A more recent piece of equipment combines the ULR rescue communication set with remote temperature sensing. A digital meter that measures temperature and humidity in the range of -100 to +200 C and 3 to 98% respectively has also been developed. The Central Mine Rescue Station in Bytom, Poland has developed equipment that permits body temperature and pulse rate of a rescuer to be measured and transmitted by radio over a distance of up to 50 m. Safe threshold values can be set for each individual rescuer.

1990-08-01

421

Tantalum nitride as a diffusion barrier between Pd_2Si or CoSi_2 and aluminum  

International Nuclear Information System (INIS)

Reactively sputtered tantalum nitride (Ta_2N) has been investigated as a diffusion barrier between Pd_2Si and aluminum and CoSi_2 and Al. Ta_2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 "0C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd_2Si/Ta_2N/Al were excellent and showed no deterioration after annealing at 500 "0C. However, similar devices with CoSi_2 contacts and Ta_2N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

422

Tantalum nitride as a diffusion barrier between Pd/sub 2/Si or CoSi/sub 2/ and aluminum  

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

1989-04-15

423

Status and progress in ion implantation technology for semiconductor device manufacturing  

International Nuclear Information System (INIS)

Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

1998-12-08

424

Speed-Sensorless DTC-SVM for Matrix Converter Drives With Simple Non-Linearity Compensation  

DEFF Research Database (Denmark)

This paper presents a new method to improve sensorless performance of matrix converter drives using a parameter estimation scheme. To improve low-speed sensorless performance, the non-Iinearities of a matrix converter drive such as commutation delays, turn-on and turn-off times of switching devices, and on-state switching device voltage drop is modelled using PQR transformation and compensated using a reference current control scheme. To eliminate the input current distortion due to the input voltage unbalance, a simple method using PQR transformation is also presented. The proposed compensation method is applied for high performance induction motor drives using a 3 kW matrix converter system without a speed sensor. Experimental results are shown to illustrate the feasibility of the proposed strategy.

2005-01-01

425

Single-event dynamics of high-performance HBTs and GaAs MESFETs  

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

1993-12-01

426

Simple Power Control for Sensorless Induction Motor Drives Fed by a Matrix Converter  

DEFF Research Database (Denmark)

This paper presents a new and simple method for sensorless control of matrix converter drives using a power flowing to the motor. The proposed control algorithm is based on controlling the instantaneous real and imaginary powers into the induction motor. To improve low-speed sensorless performance, the nonlinearities of a matrix converter drive such as commutation delays, turn-ON and turn-OFF times of switching devices, and on-state switching device voltage drop are modeled using a PQ power transformation and compensated using a reference power control scheme. The proposed sensorless control method is applied for the induction motor drive using a 3 kW matrix converter system. Experimental results are shown to illustrate the feasibility of the proposed strategy. Udgivelsesdato: September

2008-01-01

427

Reliability analysis of stiff versus flexible piping. Status report  

Energy Technology Data Exchange (ETDEWEB)

Conservative design procedures adopted for nuclear piping systems usually result in stiff piping designs that use excessive support devices such as rigid supports and snubbers. Use of these piping support devices has created safety concerns. This report describes the interim result for a piping research project conducted at Lawrence Livermore National Laboratory (LLNL) for the US Nuclear Regulatory Commission (NRC). The overall objective of this research project is to develop modified design requirements and criteria which will improve piping reliability and minimize the use of pipe supports, snubbers, and pipe whip restraints. The current study was conducted to establish the necessary groundwork for this work based on the piping reliability analysis.

1984-04-01

428

Programming resistive switching memory by a charged capacitor  

British Library Electronic Table of Contents (United Kingdom)

Resistive switching memory is a very promising technology for emerging nonvolatile memory applications. Generally, the switching behavior is triggered by a sweep or pulse voltage. In this paper, a charged capacitor is proposed to be used as the external electrical source to program a resistive switching element. From theoretical analyses based on a set behavior model, the capacitor approach can program the device efficiently. Compared with sweep or pulse mode, capacitor driving method can greatly reduce over-programming after the set event, and thus improve the resistance uniformity. The experimental results performed on Cu/ZrO2:Cu/Pt device support this conclusion quite well. The proposed methodology has great value for achieving a reliable resistive switching, which is important for high...

2011-01-01

429

Preliminary Fabry Perot testing - 1986  

Science.gov (United States)

Fabry Perot interferometry is a method of determining instantaneous velocities of an object in motion. The interferometer system is composed of the Fabry Perot interferometer, a laser, an electronic streak camera, and several focusing lenses. The first tests discussed were done on exploding bridgewire devices. During these tests, several system parameters were changed. These changes did not seem to affect the data, which appeared to be consistent. The second tests performed focused on slapper-type devices. It was determined that sandblasted, vapor-deposited aluminum on the slapper material would be required to yield quality data. Streak camera failure prevented much data from being collected. An effort is being made to replace the current streak camera. After it is replaced, a Fabry Perot and velocity interferometry system for any reflector comparison will be made. The results will be published as the conclusion to this report.

1987-04-30

430

Precise measurement of a focused ion beam profile  

Energy Technology Data Exchange (ETDEWEB)

The profile of focused boron ion beam (FIB) from a liquid metal ion source was determined by MOS device characteristics and resist exposure experiments. A focused boron ion beam was line-scanned into the middle of the channel region along the source to drain direction of a MOSFET, and the effective channel width is determined from electrical measurements. PMMA resist was also exposed by a line-scanned boron FIB and the developed contour was observed by a SEM. The profile of the focused boron ion beam with a diameter of around 0.2 ..mu..m was determined by these two methods and it was found to have about a 1 ..mu..m wide tail at around three orders of magnitude below the peak current density region. The profile difference between the two measurements are attributed to the boron diffusion in silicon by subsequent heat-treatments during device fabrication.

1987-06-01

431

Plasma Diagnostics in the Optical and X-ray regions on the Plasma Focus device PF-4 (Installation TYULPAN)  

International Nuclear Information System (INIS)

The results of experiments received on the plasma focus (PF) device with energy stored equal 4 kJ are represented. Photos of the current plasma sheath (CPS), pre-pinch, sphere-like plasma formations are produced with help of the electron-optical converter contained a gated micro-channel plate (MCP) and the CCD-camera imaging system in the visible region. The redial velocity of the CPS is about 107 cm/s. Neon plasma electron density measured with help of the interferograms in the visible region and the spectra in the soft X-ray region is equals to 3?1018 cm-3. Electron temperature is equal to about 200 eV. Discharge integral photos were obtained with help of the soft X-ray pinhole camera. Pictures with 2 ?s resolution of the plasma luminescence above PF anode region were made by CCD-camera.

2006-01-01

432

Photovoltaic performance and long-term stability of dye-sensitized mesoscopic solar cells  

International Nuclear Information System (INIS)

The efficiency of electric power generation by dye-sensitized mesoscopic photovoltaic cells has been progressing steadily over the last years reaching now 11% in full sunlight. An important question for practical applications concerns the stability of these devices under prolonged exposure to light or heat. Strikingly stable operation can be obtained by judicious selection of the sensitizer, electrolyte and sealant rendering feasible a service life of at least 20 years under normal outdoor conditions. The sensitizer playing a central role in the light energy conversion process, we analyze the kinetic requirements for it to sustain the required one hundred million turnovers. We also review recent results on the use of self-assembled monolayers of amphiphilic sensitizers and co-adsorbents to enhance the thermal robustness of the device. (author)

2004-07-04

433

Particle and X-ray damage in pn-CCDs  

Energy Technology Data Exchange (ETDEWEB)

The fully depleted pn-junction charge coupled device (pn-CCD) has been developed as a detector for X-ray imaging and high-resolution spectroscopy for the X-ray satellite missions XMM and ABRIXAS. If the detector is exposed to a particle radiation environment, the energy resolution is degraded due to charge transfer losses and a dark current increase. In a first experiment, prototype devices were irradiated with 10 MeV protons. After completion of the detector development, the proton irradiation was repeated for a quantitative study of the radiation damage, relevant for the satellite missions. The irradiation test was extended by a 5.5 MeV {alpha}-particle and a 6 keV X-ray exposure of the pn-CCD, including the CAMEX preamplifier chip.

2000-01-11

434

On the Initiation Mechanism in Exploding Bridgewire and Laser Detonators  

Science.gov (United States)

Since its invention by Los Alamos during the Manhattan Project era the exploding bridgewire detonator (EBW) has seen tremendous use and study. Recent development of a laser-powered device with detonation properties similar to an EBW is reviving interest in the basic physics of the deflagration-to-detonation (DDT) process in both of these devices. Cutback experiments using both laser interferometry and streak camera observations are providing new insight into the initiation mechanism in EBWs. These measurements are being correlated to a DDT model of compaction to detonation and shock to detonation developed previously by Xu and Stewart. The DDT model is incorporated into a high-resolution, multi-material model code for simulating the complete process. Model formulation and the modeling issues required to describe the test data will be discussed.

2006-07-01

435

Numerical simulation of fluid flow and heat transfer in a concentric tube heat exchanger  

International Nuclear Information System (INIS)

In this paper, numerical simulation of a concentric tube heat exchanger is presented to determine the convective heat transfer coefficient and friction factor in a smooth tube. Increasing the convective heat transfer coefficient can increase heat transfer rate in a concentric tube heat exchanger from a given tubular surface area. This can be achieved by using heat transfer augmentation devices. This work constitutes the initial phase of the numerical simulation of heat transfer from tubes employing augmentation devices, such as twisted tapes, wire-coil inserts, for heat transfer enhancement. A computational fluid dynamics (CFD) simulation tool was developed with CFX software and the results obtained from the simulations are validated with the empirical correlations for a smooth tube heat exchanger. The difficulties associated with the simulation of a heat exchanger augmented with wire-coil inserts are discussed. (author)

2003-05-28

436

Neutron intensity measurements of BWR spent fuels  

International Nuclear Information System (INIS)

A neutron scanning device was developed in order to obtain accurate neutron intensities of high burn-up BWR fuels. This scanning device was calibrated with a "2"5"2Cf source and used to measure axial distributions of neutron intensities of BWR fuels with various enrichments (2.0%-3.4%) irradiated up to 60 GWd/tU at Fukushima Daini Nuclear Power Station Unit 2(2F-2). The measured neutron intensities were approximated well with power law interpolations on the calculated burn-up values. The neutron intensities calculated by the ORIGEN2-86 code showed good agreements with the measured ones within 20%. (author)

2000-03-01

437

Multi-GeV electron spectrometer  

Energy Technology Data Exchange (ETDEWEB)

The advance in laser-plasma acceleration techniques pushes the regime of the resulting accelerated particles to higher energies and intensities. In particular the upcoming experiments with the FLAME laser at LNF will enter the GeV regime with almost 1nC of electrons. From the current status of understanding of the acceleration mechanism, relatively large angular and energy spreads are expected. There is therefore the need to develop a device capable to measure the energy of electrons over three orders of magnitude (few MeV to few GeV) under still unknown angular divergences. Within the PlasmonX experiment at LNF a spectrometer is being constructed to perform these measurements. It is made of an electro-magnet and a screen made of scintillating fibers for the measurement of the trajectories of the particles. The large range of operation, the huge number of particles and the need to focus the divergence present unprecedented challenges in the design and construction ...

2010-11-11

438

Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode  

British Library Electronic Table of Contents (United Kingdom)

Microcrystalline-Si thin-film transistors (?C-Si TFTs) formed by using the source/drain contact electrode of self-aligned palladium silicide have been investigated. Both the self-aligned palladium silicided scheme and the previous top-gate staggered structure employ two-mask process steps for fabricating ?C-Si TFTs. However, the self-aligned palladium silicided scheme would cause better device characteristics than the top-gate staggered structure, primarily due to more carrier tunneling. For a gate length of 2 ?m, as compared to the top-gate staggered scheme, this silicided scheme can result in a 40% improvement of on-state current. In addition, as the gate length is reduced to 1 ?m, considerable short-channel effect is caused for both the device schemes.

2010-01-01

439

Ion beam induced charge imaging of epitaxial GaN detectors  

Energy Technology Data Exchange (ETDEWEB)

We report the use of ion beam induced charge imaging to characterise the charge signal uniformity of epitaxial gallium nitride radiation detectors. The detectors were fabricated from 2 {mu}m thick semi-insulating gallium nitride, grown by MOCVD on a sapphire substrate. A carrier concentration of 1.4x10{sup 15} cm{sup -3} was measured using capacitance-voltage measurements. Ion beam induced charge imaging was carried out with a 2 MeV alpha particle beam focussed to a 3 {mu}m diameter and raster scanned across the device. The resulting ion beam images show excellent charge signal uniformity in this material with no evidence of material defects or polycrystalline structure on the micrometer length scale. No evidence of charge signal trapping was observed in these devices.

2004-09-21

440

Intervention device, especially for control, inspection and maintenance of heat exchangers. Dispositif d'intervention, notamment pour le controle, l'inspection et la maintenance des echangeurs de chaleur  

Energy Technology Data Exchange (ETDEWEB)

The steam generator inspection and maintenance device has an articulated arm formed at least by two rigid segments connected by a pivot and two plates on the ends of the arms by articulated joints which enable them to rotate about two orthogonal axis. One of the axis is parralel to the axis of the pivot between the arm sections while the other is perpendicular to the surface of the corresponding plate. Each of the plates carries coupling elements which are able to engage with the perforations of the heat exchanger tube plates and also a support for a maintenance tool.

1990-09-21

441

Integrated optoelectronic materials and circuits for optical interconnects  

International Nuclear Information System (INIS)

Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

442

How to organize a neutron imaging user lab? 13 years of experience at PSI, CH  

British Library Electronic Table of Contents (United Kingdom)

PSI has a relatively long tradition in neutron imaging since the first trials were done at its formerly existing research reactor SAPHIR with film methods. This reactor source was replaced after its shutdown in 1994 by the spallation neutron source SINQ in 1996, driven by the 590MeV cyclotron for protons with presently up to 2.3mA beam current. One of the first experimental devices at SINQ was the thermal neutron imaging facility NEUTRA, which was designed from scratch and has been the first device of its kind at a spallation source. Until now, NEUTRA has been successfully in use for many investigations in a wide range of studies covering fuel cell research, environmental behavior of plants, nuclear fuel inspection and the research on cultural heritage objects. It has been the host of PhD ...

2011-01-01

443

Heat and fluid flow during the formation of metallic glasses by splat cooling  

Science.gov (United States)

A model is presented for heat and fluid flow during hammer and anvil splat cooling. Predictions are made for the effects of superheat and hammer speed on splat thickness, cooling rate, and subsequent glass formation. The regime of Newtonian heat flow is extended well beyond the previously accepted limiting value of Nusselt number. Measurements of the structure, stability, and thickness of Fe{sub 80}B{sub 20} and Pd{sub 80}Si{sub 20} hammer and anvil splats qualitatively confirm the model prediction. Variations of superheat in shock tube splats produced similar trends to those observed in the hammer and anvil device. In an attempt to vary the equivalent of hammer speed in a shock tube device, an orifice producing a supersonic shock wave was utilized. Significant splat flake thickness reductions resulted as compared to subsonic orifices.

444

GaP/Al/sub x/Ga/sub 1-x/P heterojunction transistors for high-temperature electronic applications  

Science.gov (United States)

Useful bipolar transistor action over the temperature range from -195 to 550 /sup 0/C has been demonstrated for heterojunction bipolar transistors in the GaP/AlGaP chemical system. This represents the highest temperature at which useful bipolar solid-state transistor action has ever been demonstrated in any material. Improvements in the materials technology and in the understanding of device characteristics at high temperatures were essential to the successful fabrication of these devices. These results demonstrate that the GaP/AlGaP heterojunction system is an excellent technology for active electronic components operated at high temperatures.

1983-10-01

445

Friction in ultra-thin conjunction of valve seals of pressurised metered dose inhalers  

British Library Electronic Table of Contents (United Kingdom)

In many drug dispensing devices, such as syringes and inhalers, an elatomeric gasket is used to prevent the formulation from leaking from the chamber. During device actuation, the seal is subjected to friction, which in turn causes its deformation and can cause unintentional leakage, thus dose variability. Additionally, friction of seal is responsible for a host of potential problems such undue effort required for actuation and potential wear. The mechanism of friction generation in the seal conjunction is complex, arising from adhesion of rubber in contact with the moving interface, viscous action of a thin film of fluid and deformation of seal asperities. Therefore, the first step in understanding the conjunctional behaviour of rubber seals is a fundamental study of mechanisms of frictio...

2010-01-01

446

Frequency distribution, isotopic composition and physical characterization of plutonium-bearing particles from the Fig-Quince zone on Runit Island, Enewetak Atoll  

British Library Electronic Table of Contents (United Kingdom)

Runit Island on Enewetak Atoll was very heavily impacted by the U.S. nuclear testing campaign in the northern Marshall Islands (1946?58). The primary source of contamination on Runit Island was the 1958 Quince safety test where a large quantity of device plutonium (Pu) was scattered over the area near the GZ. A second low-yield device was detonated on the same site 10?days later, further disturbing the soil and leaving behind a very heterogeneous pattern of contamination including milligram-size particles of plutonium. A limited cleanup of the Fig-Quince zone was carried out in 1979. During this period, the effectiveness of the cleanup operations was primarily evaluated on the basis of bulk soil concentration data with little consideration given to the heterogeneity and long-term material-...

2009-01-01

447

Formation of pentagonal Cu nano wires  

Energy Technology Data Exchange (ETDEWEB)

The development of nano/molecular devices will require atomic-sized electrical contacts or nano metric conductors for wiring. As metal nano wires exhibit quantized conductance at room temperature, quantum transport effects will play an important role in the practical implementation of nano devices. As copper is currently used as interconnecting metal in standard microelectronics, the characterization of Cu nano wire properties deserves special attention. In this work, we show a detailed study of structural and electronic properties of atomic-sized Cu wires. In particular, we have established a complete correlation between the conductance and the structure by associating real-time atomic resolution transmission electron microscopy imaging with molecular dynamic simulations, conductance measurements and conductance calculations. Our study has revealed the structural relaxation of Cu wires forming a pentagonal atomic arrangement along the [110] ...

2004-07-01

448

Fabrication of shuttle-junctions for nanomechanical transfer of electrons  

International Nuclear Information System (INIS)

We report on the fabrication of nanomechanical devices for shuttling of electrons from one electrode to another. Each device consists of a 20 nm diameter gold nanoparticle embedded within the gap between two gold electrodes. In two different kinds of shuttle-junctions the nanoparticle is attached to the electrodes through either (i) a single layer of 1,8-octanedithiol or (ii) a multilayer of 1-octanethiol molecules. The thiol layers play the role of 'damped springs', such that when a sufficient voltage bias is applied to the junction, the nanoparticle is expected to start oscillating and thereby transferring electrons from one electrode to the other. For both kinds of shuttle-junctions we observed an abrupt increase in the transmitted current above a threshold voltage, which can be attributed to a transition from the stationary to the oscillating regime. The threshold voltage was found to be lower for single-layer shuttle-junctions.

2009-12-02

449

FY 1992 Measurements and Characterization Branch annual report  

Energy Technology Data Exchange (ETDEWEB)

The Measurements and Characterization Branch actively supports the advancement of DOE/NREL goals for the development and implementation of the solar photovoltaic (PV) technology. The primary focus of the laboratories is to provide state-of-the-art analytical capabilities for materials and device characterization and fabrication. The branch houses a comprehensive facility that Is capable of providing information on the full range of PV components. A major objective of the branch is to aggressively pursue collaborative research with other government laboratories, universities, and industrial firms for the advancement of Pv technologies. Members of the branch disseminate research findings to the technical community in publications and presentations. The Measurements and Characterization Branch encompasses seven coordinated research groups, providing integrated research and development that covers all aspects of photovoltaic materials/devices ...

1993-03-01

450

Effects of prophylactic misoprostol administration prior to intrauterine device insertion in nulliparous women  

British Library Electronic Table of Contents (United Kingdom)

Background: This study was conducted to examine the effects of prophylactic misoprostol prior to intrauterine device (IUD) placement in nulliparous women. Study Design: Nulliparous, reproductive-aged women desiring an IUD for contraception were randomized to receive 400 mcg of buccal misoprostol or placebo 90 min prior to IUD insertion. Subjects completed a series of 100-mm visual analogue scales (VAS, anchors: 0=none, 100 mm=worst imaginable) to measure their perceived pain at several times points (anticipated pain, leg positioning, speculum placement, tenaculum placement, IUD insertion, equipment removal and 5 min postinsertion). Secondary outcomes included provider ''ease of placement'' (100-mm VAS, anchors: 0=easy, 100 mm=extremely difficult), side effects and retention of the IUD afte...

2011-01-01

451

Effectiveness of different music-playing devices for reducing preoperative anxiety: A clinical control study  

British Library Electronic Table of Contents (United Kingdom)

Background: While waiting for surgery, patients often exhibit fear and anxiety. Music is thought to be an alternative to medication to relieve anxiety. However, due to concerns about infection control, devices other than headphones may be considered for this purpose. Objectives: The purpose of this study was to determine the anxiety-relieving effect of broadcast versus headphone music playing for patients awaiting surgery. Design: A randomized controlled clinical study. Setting: The waiting area of an operating theater of a metropolitan teach hospital in Taiwan. Participants: Alert adult with age between 20 and 65 years old waiting for surgery without premedications. Methods: A total of 167 patients were randomly assigned to the headphone, broadcast and control groups. Both the headphone a...

2011-01-01

452

Effect of On-Chip Magnetic Shielding for TES Microcalorimeters  

British Library Electronic Table of Contents (United Kingdom)

We investigated the magnet field dependence of the X-ray pulse height and the critical current of a Ti/Au bilayer TES micro-calorimeter. The pulse height was strongly affected by the magnetic field intensity applied perpendicularly to the TES surface. We found that the critical current at zero temperature, I c0, decreased by a factor of two by applying a magnet field of ?10??T. Our data are consistent with a TES sensitivity proportional to (I/I c0)?2/3, as predicted by the Ginzburg-Landau theory. This fact implies that the shape of the R?T curve of the TES is partly determined by the critical current of the superconductor. In order to make our TES microcalorimeters less sensitive to the external magnetic field, we fabricated devices equipped with on-chip magnetic shielding. One device has ...

2008-01-01

453

Dosimetric considerations for patients with HIP prostheses undergoing pelvic irradiation. Report of the AAPM Radiation Therapy Committee Task Group 63  

International Nuclear Information System (INIS)

This document is the report of a task group of the Radiation Therapy Committee of the AAPM and has been prepared primarily to advise hospital physicists involved in external beam treatment of patients with pelvic malignancies who have high atomic number (Z) hip prostheses. The purpose of the report is to make the radiation oncology community aware of the problems arising from the presence of these devices in the radiation beam, to quantify the dose perturbations they cause, and, finally, to provide recommendations for treatment planning and delivery. Some of the data and recommendations are also applicable to patients having implanted high-Z prosthetic devices such as pins, humeral head replacements. The scientific understanding and methodology of clinical dosimetry for these situations is still incomplete. This report is intended to reflect the current state of scientific understanding and technical methodology in clinical dosimetry for ...

2003-06-01

454

Dissipative dynamics of circuit-QED in the mesoscopic regime  

CERN Document Server

We investigate the behavior of a circuit QED device when the resonator is initially populated with a mesoscopic coherent field. The strong coupling between the cavity and the qubit produces an entangled state involving mesoscopic quasi-pointer states with respect to cavity dissipation. The overlap of the associated field components results in collapse and revivals for the Rabi oscillation. Although qubit relaxation and dephasing do not preserve these states, a simple analytical description of the dissipative dynamics of the circuit QED device including cavity relaxation as well as qubit dissipation is obtained from the Monte-Carlo approach. Explicit predictions for the spontaneous and induced Rabi oscillation signals are derived and sucessfully compared with exact calculations. We show that these interesting effects could be observed with a 10 photon field in forthcoming circuit QED experiments.

2007-01-01

455

Digital Audio Sampling for Film and Video.  

Science.gov (United States)

Digital audio sampling is explained, and some of its implications in digital sound applications are discussed. Digital sound equipment is rapidly replacing analog recording devices as the state-of-the-art in audio technology. The philosophy of digital recording involves doing away with the continuously variable analog waveforms and turning the patterns into numbers. A digital recording device rapidly samples the incoming sounds, quantifying the signal into a series of numerical values (binary codes). Although digital sound eliminates many of the traditional analog problems, digital signal processing presents key problems in sampling rates and synchronization. Careful control is necessary to check signals through each step in the audio chain. The advantages of digital audio processing include increased signal-to-noise ratio, no flutter, transparent generation of copies, and sound manipulation. These benefits come with increased quality control ...

1993-03-01

456

Device for controlling feedwater at low power of nuclear power plants  

International Nuclear Information System (INIS)

Purpose: To provide a feedwater control device capable of minimizing the adverse response of steam drum level at low power. Consitution: In order to perform feedwater control at low power by the substantial control of three factors, that is, main steam flow rate, feedwater flow rate and steam drum level, the main steam flow rate is determined from the reactor output and feedwater rate is determined from the changes in the feedwater temperature due to the mixing of waters in the reactor clean up system and feedwater. If a difference is resulted between these flow rates, a starting feedwater regulator is controlled instantly to eliminate the difference. The water level in the steam drum is used for amending the difference from the final set value of the drum water level, by which the adverse response of the steam drum level can be minimized. (Seki, T.).

457

Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems  

Energy Technology Data Exchange (ETDEWEB)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

2006-03-06

458

Development and application of a diaphragm micro-pump with piezoelectric device  

British Library Electronic Table of Contents (United Kingdom)

In this study, a new type of thin, compact, and light weighed diaphragm micro-pump has been successfully developed to actuate liquid by the vibration of a diaphragm. The micro-diaphragm pump with two valves is fabricated in an aluminum case by using highly accurate CNC machine, and the cross-section dimension is 28?mm??5?mm. Both valves and diaphragm are manufactured from PDMS. The amplitude of vibration by a piezoelectric device produces an oscillating flow and alters the chamber volume by the curvature change of a diaphragm. Several experimental set-ups for performance tests in a single micro-diaphragm pump, isothermal flow open system, and a closed liquid cooling system are designed and implemented. The performance of a one-side actuating micro-diaphragm pump is affected by the design ...

2008-01-01

459

Design of inductive sensors for tongue control system for computers and assistive devices  

British Library Electronic Table of Contents (United Kingdom)

Purpose. The paper introduces a novel design of air-core inductive sensors in printed circuit board (PCB) technology for a tongue control system. The tongue control system provides a quadriplegic person with a keyboard and a joystick type of mouse for interaction with a computer or for control of an assistive device. Method. Activation of inductive sensors was performed with a cylindrical, soft ferromagnetic material (activation unit). Comparative analysis of inductive sensors in PCB technology with existing hand-made inductive sensors was performed with respect to inductance, resistance, and sensitivity to activation when the activation unit was placed in the center of the sensor. Optimisation of the activation unit was performed in a finite element model. Results. PCBs with air-core indu...

2010-01-01

460

Design and Operation of a Novel Capillary Pumped Two-Loop System for Cooling of Electronic Devices  

British Library Electronic Table of Contents (United Kingdom)

Heat pipes, loop heat pipes (LHP), and capillary pumped loops (CPL) have already proven their potential to remove high heat fluxes from a small electronic device and transport the heat to a heat sink that is large enough to transfer it into the ambient air. We introduce a novel two-loop system similar in design to CPLs but with an additional buoyancy-driven fluid loop. Non-degassed methanol is used as a working fluid. Key benefits compared to LHPs and CPLs are easy filling procedure, easy startup, and the tolerance toward noncondensable gases in the fluid. The amount of fluid in the system can be varied over a broad range without affecting the heat transfer performance. Three different inverted-meniscus-type evaporators have been employed in this study. A maximum evaporator heat transfer r...

2012-01-01

461

Conventional and back-side focused ion beam milling for off-axis electron holography of electrostatic potentials in transistors  

International Nuclear Information System (INIS)

Off-axis electron holography is used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope (TEM) using focused ion beam (FIB) milling from the substrate side of the semiconductor device. The measured electrostatic potential is compared with results obtained from TEM specimens prepared using the more conventional 'trench' FIB geometry. The use of carbon coating to remove specimen charging effects, which result in electrostatic fringing fields outside 'trench' specimens, is demonstrated. Such fringing fields are not observed after milling from the substrate side of the device. Analysis of the measured holographic phase images suggests that the electrically inactive layer on the surface of each FIB-milled specimen typically has a thickness of 100 nm.

2005-04-01

462

Controlling charge injection in organic electronic devices using self-assembled monolayers  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2{sup {prime}}-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current{endash}voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer. {copyright} {ital 1997 American Institute of Physics.}

1997-12-01

463

Control rod drives  

International Nuclear Information System (INIS)

Purpose: To secure the reactor operation safety by the provision of a fluid pressure detecting section for control rod driving fluid and a control rod interlock at the midway of the flow pass for supplying driving fluid to the control rod drives. Constitution: Between a driving line and a direction control valve are provided a pressure detecting portion, an alarm generating device, and a control rod inhibition interlock. The driving fluid from a driving fluid source is discharged by way of a pump and a manual valve into the reactor in which the control rods and reactor fuels are contained. In addition, when the direction control valve is switched and the control rods are inserted and extracted by the control rod drives, the pressure in the driving line is always detected by the pressure detection section, whereby if abnormal pressure is resulted, the alarm generating device is actuated to warn the abnormality and the control rod inhibition ...

464

Composition and method for encapsulating photovoltaic devices  

Energy Technology Data Exchange (ETDEWEB)

A composition and method for encapsulating a photovoltaic device which minimizes discoloration of the encapsulant. The composition includes an ethylene-vinyl acetate encapsulant, a curing agent, an optional ultraviolet light stabilizer, and/or an optional antioxidant. The curing agent is preferably 1,1-di-(t-butylperoxy)-3,3,5-trimethylcyclohexane; the ultraviolet light stabilizer is bis-(N-octyloxy-tetramethyl) piperidinyl sebacate and the antioxidant is selected from the group consisting of tris (2,4-di-tert-butylphenyl) phosphite, tetrakis methylene (3,5-di-tert-butyl-4-hydroxyhydrocinnamate) methane, octadecyl 3,5-di-tert-butyl-4-hydroxyhydrocinnamate, and 2,2'-ethylidene bis(4,6-di-t-butylphenyl) fluorophosponite. The composition is applied to a solar cell then cured. The cured product contains a minimal concentration of curing-generated chromophores and resists UV-induced degradation.

2000-01-01

465

Comparison of effectiveness of three radon detectors (LR115, CR39 and silicon diode pin) placed in a cylindrical device -theory and experimental techniques  

Energy Technology Data Exchange (ETDEWEB)

Researchers at the Laboratory of Nuclear Microanalysis in Besancon (France) are developing and improving radon measurements in order to detect and analyse, more precisely radon emanation anomalies in both fields of Earth Sciences and Radioprotection. In order to characterize radon emanation, two complementary techniques are developed; continuous measurement through a portable proportional counter and passive measurements by nuclear track detectors for both fieldwork and laboratory analysis. A mathematical model is being devised to interpret the nuclear track detector response. This model is performed according to the device characteristics: type of detectors, shape and size of cells and whether a membrane is used or not. In addition to the theoritical study, experimental radon concentration measurements will be reported. (author).

1993-12-31

466

Comparison of effectiveness of three radon detectors (LR115, CR39 and silicon diode pin) placed in a cylindrical device -theory and experimental techniques  

International Nuclear Information System (INIS)

Researchers at the Laboratory of Nuclear Microanalysis in Besancon (France) are developing and improving radon measurements in order to detect and analyse, more precisely radon emanation anomalies in both fields of Earth Sciences and Radioprotection. In order to characterize radon emanation, two complementary techniques are developed; continuous measurement through a portable proportional counter and passive measurements by nuclear track detectors for both fieldwork and laboratory analysis. A mathematical model is being devised to interpret the nuclear track detector response. This model is performed according to the device characteristics: type of detectors, shape and size of cells and whether a membrane is used or not. In addition to the theoritical study, experimental radon concentration measurements will be reported. (author).

467

Collection of athermal phonons into doped Ge thermistors using quasiparticle trapping  

Energy Technology Data Exchange (ETDEWEB)

We have developed a low-temperature particle detector that uses a novel quasiparticle trapping mechanism to funnel athermal phonon energy from an 80 mg Ge absorber into a 1.6 mg doped Ge thermistor via a superconducting Al film. We report on pulse height spectra obtained at 320 mK by scanning a {sup 241}Am alpha source along the device, and show that up to 20% of the energy deposited in the Ge absorber by a 5.5 MeV alpha particle interaction can be collected into a thermistor via quasiparticle trapping. We show that this device is sensitive to the position of an alpha particle interaction in the Ge absorber for interaction distances of up to 5 mm from a quasiparticle trap.

1995-05-15

468

Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation  

Energy Technology Data Exchange (ETDEWEB)

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.

2005-08-01

469

Characteristics of the flow-controlled accumulator  

International Nuclear Information System (INIS)

Mitsubishi is developing a new type of accumulator incorporating the technology of fluidics as one of the seeds for the improved safety of the newly constructed pressurized water reactor plants. This accumulator employs a vortex flow control device, called a vortex damper, as a fluidic device to simplify the safety systems. A fundamental experimental study with a one-fifth scale model and confirmation tests with a one-third scale model to develop the vortex damper have been carried out, and satisfactory results have been achieved. The results of the confirmation tests under the prototype pressure conditions agree well with the basic tests. The flow rate ratio can be 5 to 6. The pressure loss coefficient in the large flow rate period is 8. A cavitation factor is the main parameter of the flow rate coefficient.

470

Ceramic bearings for application to hard disc drives (HDD); HDD yo ceramic ball bearing  

Energy Technology Data Exchange (ETDEWEB)

Ceramic ball bearings of silicon nitride are used for hard disk drive (HDD) spindle motors, to increase seed, reliability and memory capacity of the HDDs. Silicon nitride ceramics have advantages of lightweight, high strength and hardness over the conventional steel for bearings, but is expensive. A new process of high cost performance has been developed for mass production of the small-size ceramic balls. The company plans to apply these bearings to higher devices, e.g., servers, for the time being, and to expand the applicable areas, e.g., common devices and other small-size motors. The ceramic bearings have been developed jointly with Koyo Seiko Co. Ltd. (translated by NEDO)

2000-03-01

471

Boron enhanced diffusion due to high energy ion-implantation and its suppression by using RTA process  

Energy Technology Data Exchange (ETDEWEB)

SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of {approximately}2E13cm{sup {minus}2}. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.

1995-12-31

472

Boron enhanced diffusion due to high energy ion-implantation and its suppression by using RTA process  

International Nuclear Information System (INIS)

SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of #approx#2E13cm"-"2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.

473

Assessment of MCNP-4B code using measurement data of Wolsung nuclear power plant 2  

International Nuclear Information System (INIS)

The benchmark calculations have been performed for MCNP-4B code using the measurement data of Wolsong nuclear power plant 2. In this study, the benchmark calculations have been performed for the criticality, boron worth, reactivity device worth, reactivity coefficient, and flux scan. Cross-section libraries were newly generated from ENDF/B-VI release 3 through NJOY97.114 data processing system and a three-dimensional full core model was developed for MCNP calculation. The simulation results have shown that the criticality is estimated within 4 mkn and the estimated reactivity worth of the control devices are generally consistent with the measurement data. In certain cases, the simulation results have shown large discrepancies against the measurement data, which will be sturdied further in the near future.

2001-05-01

474

An experimental study on stable flow control for multi-stage expansion device  

Energy Technology Data Exchange (ETDEWEB)

An Experimental study was performed to investigate flow characteristic of multi-stage expansion valve applied with inverter heat pump. Multi-stage expansion consists of parallel valve which is controlled on/off type of solenoid valve. Expansion valve open one solenoid the other closed in low frequency region and open two solenoid valve in high frequency region. In rated frequency region always open one solenoid valve and control period and on-off time ratio for the other solenoid valve. Flow characteristics of a orifice expansion was measured as a function of orifice diameter and operating conditions. As a results multi-stage expansion device can control a stable flow with period and on-off time ratio. (author). 4 refs., 7 figs., 1 tab.

1998-04-01

475

A study of different types of current mirrors using polysilicon TFTs  

Energy Technology Data Exchange (ETDEWEB)

Polysilicon thin-film technology has become of great interest due to the demand for large area electronic devices. Active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting displays (AMOLEDs) are among the fields where polysilicon thin-film transistors (poly-Si TFTs) are most commonly used. Such devices, generally, require analog signal processing. This fact makes the performance of basic analog blocks, such as current mirrors implemented with poly-Si TFTs, crucial. This paper examines the performance of various current mirror designs through simulation. Finally, a novel design of a current mirror is proposed aimed to be used in low voltage applications.

2005-01-01

476

A nonlinearity compensation method for a matrix converter drive  

DEFF Research Database (Denmark)

This paper presents a new method to compensate the nonlinearities for matrix converter drives. The nonlinearities of matrix converter drives such as commutation delay, turn-on and turn-off time of the switching devices, and on-state switching device voltage drop is corrected by a new matrix converter model using the direction of current. The proposed method does not need any additional hardware or complicated software and it is easy to realize by applying the algorithm to the conventional vector control. The proposed compensation method is applied for high-performance induction motor drives using a 3-kW matrix converter system without a speed sensor. Experimental results show the proposed method provides good compensating characteristics.

2005-01-01

477

A connecting coupling  

Energy Technology Data Exchange (ETDEWEB)

The flexible, insulated, single strand cables are electrically connected with a cylindrical polar tip (PN) by means of cylindrical and conical shafts for the polar tips, which enter the faces of the divided, multiwire strand, clamped by tension half couplings. The flat ends of the polar tips being joined are positioned in two concentric mandrel bushings, an internal fixed one and an external, axially movable bushing (PV). The internal bushing is rigidly attached to the end of the left polar tip and equipped with three or four rounded, radial openings, whose diameter is determined by the external diameter of the locking device hinges (ShF) of the connecting couplings. The right polar tip is equipped with an annular channel of trapezoidal section into which the locking device hinges enter. The external movable bushing on the right side has a conical turning and on the left, a cylindrical into which the cylindrical spring which holds the movable ...

1981-06-05

478

Photoelectrochemical Water Splitting for Hydrogen Production Using Multiple Bandgap Combination of Thin-Film-Photovoltaic and Photocatalyst  

Science.gov (United States)

One of the NASA research activities was to identify, characterize, and simulate a series of technologies that could be used for hydrogen production at NASA Kennedy Space Center (KSC) using locally available sources. This project examined the production of hydrogen from solar energy. To produce hydrogen by water splitting, the operating voltage of conventional photovoltaic (PV) cells cannot supply the overvoltage required. Thus, the objective of this project was to research and develop photoelectrochemical (PEC) cells that can supply the required voltage for water splitting by constructing a multiple bandgap tandem PV cell and a photocatalyst that can be activated by infrared (IR) photons transmitted through the PV cell. The proposed concept is different from conventional PEC water splitting by using multiple band gap combinations. The advantages for this PEC cell concept is that the PV cells are not in contact with the electrolyte solution, thus reducing the problems of corrosion and ...

2009-01-01

479

Working group report on electron-impact processes: Recommended database for electron impact excitation and ionization  

International Nuclear Information System (INIS)

The cross section database for electron impact excitation and electron impact ionization for hydrogen beam kinetic energies greater than 100 eV was considered, giving for each particular process a reference to a recommended publication of cross sections, as well as the accuracy or estimated accuracy. The work is motivated by the application of neutral beam injection in magnetic confinement devices, such as large tokamaks. 9 refs, 2 figs.

1989-07-01

480

Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications  

International Nuclear Information System (INIS)

A total dose hardening treatment is applied to SIMOX buried oxides. Total ionizing dose radiation testing is performed on fully-depleted transistors fabricated on both hardened and non-hardened substrates. At 200 krads x-ray dose, the front gate shift is reduced from -0.7 to -0.2 V for FETs built on the hardened wafers.

1996-07-15

481

Theoretical study of subwavelength imaging by acoustic metamaterial slabs  

CERN Document Server

We investigate theoretically subwavelength imaging by acoustic metamaterial slabs immersed in the liquid matrix. A near-field subwavelength image formed by evanescent waves is achieved by a designed metamaterial slab with negative mass density and positive modulus. A subwavelength real image is achieved by a designed metamaterial slab with simultaneously negative mass density and modulus. These results are expected to shed some lights on designing novel devices of acoustic metamaterials.

2009-01-01

482

Strain-gage for mining instruments  

Energy Technology Data Exchange (ETDEWEB)

The proposed device incorporates an axle which has a roller bearing support mounted upon it. This support uses a cylindrical sleeve that comes in contact with the housing, the sensors, and the bearing support component. Metering accuracy is improved by placing roller bearing supports into grooves running through the protruding center sections of the sensor elements. These roller bearing supports interface with the cylindrical sleeve.

1982-01-01

483

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout  

International Nuclear Information System (INIS)

2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEB). SEB parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p"+ plug modification approach for SEB hardening of power MOSFETs is validated with simulations on actual device structures.

1995-07-17

484

Radiation hardening of a high voltage IC technology (BCDMOS)  

International Nuclear Information System (INIS)

A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.

1990-07-16

485

Power fluidics and the environment  

International Nuclear Information System (INIS)

This paper reviews power fluidics technology in the nuclear industry giving emphasis also on its potential uses in chemical plants and in flood and irrigation control. This is a technology of controlling process fluids by purely hydrodynamic methods, which should increase system reliability by eliminating valves, pumps and other fluid control devices that are often causes of failure. This review indicates that the hydrodynamics of fluidic components are not satisfactorily understood at present and may be more complex than similar theory in electronics.

486

Phthalate esters used as plasticizers in packed red blood cell storage bags may lead to progressive toxin exposure and the release of pro-inflammatory cytokines  

UK PubMed Central (United Kingdom)

Phthalate esters (PE's) are plasticizers used to soften PVC-based medical devices. PE's are the most abundant man-made pollutants and increase the risk of developing an allergic respiratory disease...Full Text Available

2009-07-01

487

Optical measurement of electron bunching in vacuum  

International Nuclear Information System (INIS)

We report the homodyne detection of phase modulation sidebands induced on a laser beam by a coherently bunched electron beam. This provides a sensitive and nonperturbing measurement of complex Fourier time series components of the electron density. A proof-of-principle measurement of the microwave frequency component of electron density in a crossed-field device, which agrees well with a calculation of the same quantity, is reported.

488

OLDER USERS' PERSPECTIVES ON MOBILITY - RELATED, ASSISTIVE TECHNOLOGY RESEARCH: AN EXPLORATORY STUDY  

Environmental Research Database

ObjectivesObjectives Not AvailableDescriptionOne significant research challenge posed by the growing number of older people in the population concerns the mobility-related problems which increase with age, inhibit independence, and can be a prime cause of admission to expensive institutional settings. The scope for engineering advances, particularly in the field of rehabilitation and assistive technology, is immense. The challenge is to produce aids, devices and products that are attractive to older people themselves, since without such [continued...

2000-01-31

489

Noise Shielding Using Acoustic Metamaterials  

International Nuclear Information System (INIS)

We exploit theoretically a class of rectangular cylindrical devices for noise shielding by using acoustic metamaterials. The function of noise shielding is justified by both the far-field and near-field full-wave simulations based on the finite element method. The enlargement of equivalent acoustic scattering cross sections is revealed to be the physical mechanism for this function. This work makes it possible to design a window with both noise shielding and air flow. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

2010-03-15

490

Method of bistable optical information storage using antiferroelectric phase PLZT ceramics  

Energy Technology Data Exchange (ETDEWEB)

A method for bistable storage of binary optical information includes an antiferroelectric (AFE) lead lanthanum zirconate titanate (PLZT) layer having a stable antiferroelectric first phase and a ferroelectric (FE) second phase obtained by applying a switching electric field across the surface of the device. Optical information is stored by illuminating selected portions of the layer to photoactivate an FE to AFE transition in those portions. Erasure of the stored information is obtained by reapplying the switching field.

1990-01-01

491

Koyo engineering journal, No. 147, April 1995. Special issue on automotive bearings and applicable products  

Energy Technology Data Exchange (ETDEWEB)

Special Issue on Automotive Bearings and Applicable Products; Reports include Performance of Ceramic Cam Roller Follower for Automotive Engine; Performance of Drawn Cup Needle Roller Bearing for Propellershaft; Plastic Bearing Retainer for High Temperature Oil Lubrication; Bearing Device for Vehicle Axle; and Flush Mounting Type Programmable Cam Switches.

1995-12-31

492

Hydraulic device for control rod drive mechanisms  

International Nuclear Information System (INIS)

Purpose: To improve the reliability of control rod drive mechanisms for use in BWR type reactors by preventing erroneous insertion of control rods caused by the increase in the coolant pressure. Constitution: A pressure-releaf valve mechanism is provided which opens its valve when a detected difference between the pressure of the coolants flowing through coolant pipeways and the reactor pressure exceeds a predetermined pressure difference. If the coolant pressure increases abnormally, coolants in the coolant pipeway are released to lower the pressure. (Aizawa, K.).

1981-07-31

493

Guarantee outline of radiation hardening for satellite  

International Nuclear Information System (INIS)

The Guarantee Outline presents the technical demands of design and contents of assessment for radiation hardening in satellite engineering in China. It includes the basis of design in space environment of polar orbit, the contents of design for general radiation hardening, the requirements and assessments of the single-board computer, the requirements of design for circuits (including hardware and software), the choices and assessments for devices, and the primary stipulations for the requirements of design and assessments against the phenomenon of charge and discharge.

494

Effect of rapid thermal annealing on radiation hardening of MOS devices  

International Nuclear Information System (INIS)

The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected, data are in good agreement with a recently developed model of oxygen out-diffusion; (ii) the location across the wafer with a radial dependence, results could be related to stress induced by thermal gradient.

1995-07-17

495

Calculation of 3-D electrical field distribution around technical devices in the vicinity of high voltage transmission lines  

Energy Technology Data Exchange (ETDEWEB)

The influence that electromagnetic fields have on mechanical and electronic equipment was discussed. A three dimensional numerical simulation model of electric fields around high voltage power transmission lines was described. 4 refs., 1 tab., 5 figs.

1997-12-31

496

Calculation of 3-D electrical field distribution around technical devices in the vicinity of high voltage transmission lines  

International Nuclear Information System (INIS)

The influence that electromagnetic fields have on mechanical and electronic equipment was discussed. A three dimensional numerical simulation model of electric fields around high voltage power transmission lines was described. 4 refs., 1 tab., 5 figs.

1997-08-24

497

A thermal valve heat flux control device  

International Nuclear Information System (INIS)

In order to evacuate the residual power in a nuclear reactor, a thermal valve system is presented for the modification of the heat exchange conditions at the pool exchanger level, which avoids the use of mechanical valves on the pipes. The system involves a vessel containing the exchanger, with openings at the upper end of the vessel and means for feeding the fluid at the lower end, and means for controlling the opening width.

1994-10-05

498

A comprehensive understanding of the efficacy of N-Ring hardening methodologies in SiGe HBTs  

International Nuclear Information System (INIS)

We investigate the efficacy of mitigating radiation-based single event effects (SEE) within circuits incorporating SiGe heterojunction bipolar transistors (HBTs) built with an N-Ring, a transistor-level layout-based radiation hardened by design (RHBD) technique. Previous work of single-device ion-beam induced charge collection (IBICC) studies has demonstrated significant reductions in peak collector charge collection and sensitive area for charge collection; however, few circuit studies using this technique have been performed. Transient studies performed with Sandia National Laboratory's (SNL) 36 MeV 16O microbeam on voltage references built with N-Ring SiGe HBTs have shown mixed results, with reductions in the number of large voltage disruptions in addition to new sensitive areas of low-level output voltage disturbances. Similar discrepancies between device-level IBICC results and circuit measurements are found for the case of digital shift ...

2010-07-19