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Simulation approaches for nano-scale semiconductor devices

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We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO_2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-#mu#m device characteristics, such as V_t_h and I_d_s_a_t, for which the differences between simulation and experiment less than 5 %.

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Abstract: We report for the selective-area chemical synthesis of semiconductor single-crystal organic nanowires of silver-tetracyanoquinodimethane (Ag-TCNQ). Straight and smooth Ag-TCNQ nanowires can be produced and patterned on micrometer and nanometer scale on silicon substrates covered with a thin layer of Ag film through the reaction of TCNQ and Ag in a simple gas-solid chemical reaction process. Ag-TCNQ nanowires are characterized by UV-vis, IR and Raman spectroscopy, respectively. The Ag-TCNQ nanowires grows preferentially along the [100] direction of strong - stacking of Ag-TCNQ molecules. Nanodevices based on these nanowires are fabricated using focus ion beam (FIB) technique. Electrical properties are characterized and I-V hysteresis is observed, which shows memory effect with electrical switching of three orders on-off ratio. These nanowires could be potential for use in optical storage, ultrahigh-density nanoscale memory and logic ...

International Nuclear Information System (INIS)

The methods of superconducting device fabrication by lithography and multilevel processing usually require a number of processing steps with lithographic resolution and alignment adequate for the scale of the device be fabricated. As an alternative, the focused ion beam (FIB) microscope is increasingly being used directly to fabricate devices. A major advantage of using a FIB compared to other lithography methods is its flexibility and high resolution. It allows in-situ, milling (#propor to#5 nm at a beam current of 1 pA) to a variety of depths, and imaging (2 nm) of the sample. In this paper we describe our development of junction fabrication techniques using the FIB and their application in creating a range of potential sensor devices and quantum electronics applications. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

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The results of Sandia National Laboratories' participation in the NASA Planetary Definition and Design Program are summarized. Areas reported include the characterization of large area cadmium zinc telluride spectrometers and the application of simulation techniques to the prediction of device performance. Also investigated was the response of mercuric iodide devices in the region from 1 to 100 KeV. A literature study to determine the status or radiation damage measurements in room temperature semiconductor devices is also reported.

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

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The low-power operation of a semiconductor buried-heterostructure Raman laser is reported. We are developing these devices for very wide-band optical communication in the terahertz frequency region. It has a structure with a GaP active layer and Al{sub {ital x}}Ga{sub 1{minus}{ital x}}P cladding layers, which are grown by the temperature-difference method under controlled vapor pressure. By making the stripe width 30--40 {mu}m, we have obtained a threshold pump power of 500 mW. A low-threshold semiconductor Raman laser can be pumped by semiconductor injection lasers. We have measured the optical loss of the waveguide and detected the contribution from scattering and leakage at heterointerfaces.

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The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

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Research at the interface between biomolecules and inorganic nanocrystals has resulted in a great number of new discoveries. In part this arises from the synergistic duality of the system: biomolecules may act as self-assembly agents for organizing inorganic nanocrystals into functional materials; alternatively, nanocrystals may act as microscopic or spectroscopic labels for elucidating the behavior of complex biomolecular systems. However, success in either of these functions relies heavily uponthe ability to control the conjugation and assembly processes.In the work presented here, we first design a branched DNA scaffold which allows hybridization of DNA-nanocrystal monoconjugates to form discrete assemblies. Importantly, the asymmetry of the branched scaffold allows the formation of asymmetric2assemblies of nanocrystals. In the context of a self-assembled device, this can be considered a step toward the ability to engineer functionally distinct inputs and ...

International Nuclear Information System (INIS)

The lasing of the first free-electron laser (FEL) in the world was successfully carried out in 1977, so the history of FELs as a light source is not so long. But FELs are now utilized for research in many scientific and engineering fields owing to such characteristics as tunability of the wavelength, and short pulse and high peak power, which is difficult utilizing a common light source. Research for industrial applications has also been carried out in some fields, such as life sciences, semiconductors, nano-scale measurement, and others. The task for the industrial use of FEL is the realization of high energy efficiency and high optical power. As a means of promoting realization, the combining of an FEL and superconducting linac is now under development in order to overcome the thermal limitations of normal-conducting linacs. Further, since tuning the wavelength is carried out by changing the magnetic density of the undulator, which is now ...

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The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

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A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the ...

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Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present ...

International Nuclear Information System (INIS)

Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties ...

International Nuclear Information System (INIS)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

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Charge transport in disordered organic semiconductors is generally described as thermally activated hopping in a gaussian distribution of localized states. The presence of charge traps is critical to the performance of organic electronic devices, since trapped charge carriers do no longer contribute to the current flow. The trap distribution in the polymer poly(3-hexylthiophene) (P3HT) is investigated by applying the fractional thermally stimulated current technique. Thereby, a low temperatur double-peak distribution has been revealed. One of the peaks is believed to belong to the tail of the intrinsic density of states, whereas the other trap is strongly affected by exposure to oxygen. We discuss the influence of oxygen exposure time on the trap distribution.

International Nuclear Information System (INIS)

The search for alternative energy supplies continues since the oil crisis of 1973. One energy vector is dihydrogen, H_2. Of the group VI hydrides, water has been the focus of most studies in harnessing solar energy and generating H_2. Two basic photochemical strategies have been employed: molecular photocatalytic systems, and semiconductor based photocatalytic systems. The results have not met with the euphoric expectations of the mid-1970's because of the difficulties encountered in H_2O splitting (E"0 S"2 "-/S = + 0.51 eV, NHE) is another vehicle tapped as a potential source of H_2. Heterogeneous photocatalysis utilizing semiconductor particulates and sunlight as the photon source has been successful with interesting quantum efficiencies. To this end, novel photocatalytic devices have been developed; one of these uses two coupled semiconductors to achieve vectorial displacement of the photogenerated ...

International Nuclear Information System (INIS)

The authors observed an extremely high permittivity (#approx#35 000 at T_C) in barium zirconate titanate (BaZr_0_._1Ti_0_._9O_3) ceramics with holmium substitution (1-5 mol %) in Ba site. Careful microstructural investigation and energy dispersive spectroscopy analysis of the 1-2 mol % of Ho substituted ceramics showed the enrichment of a Ho-phase along the grain boundaries with a composition close to the Ho_2Ti_2O_7 pyrochlore. The formation of Ho rich phase resulted in the Maxwell-Wagner polarization mechanism, which leads to this unusually high permittivity. Ceramics with 3 mol % or higher Ho content showed lesser permittivity values compared to 1-2 mol %, probably due to the increase in pyrochlore phase. These high dielectric constant ceramics are useful in nanoscale devices.

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Two novel organic n-type semiconductors are investigated due to their function as electron acceptor for applications in organic electronic devices to widen the knowledge of how molecule structure influences the excitation processes in organic electronics. Bispyrenylfullerene and Octadecyl-Capronacidesterfullerene are C{sub 60} derivates with sidechains more featured compared to the commonly used[6,6] phenyl-C{sub 61}-butyric acid methyl ester (PCBM). In bulk heterojunction devices regioregular poly(3-hexylthiophene) (P3HT) was used as donor. The materials, pristine and in blend, were studied in view of light absorption, their quenching abilities of the P3HT photoluminescence as well as excited states. Furthermore, the spin state of the excited states was determined by light-induced electron spin resonance. Combining these complimentary experimental techniques, we obtained information on the generation of excited states, ...

International Nuclear Information System (INIS)

Within about 10 years, microelectronic devices will be made with more than a billion (10"9) electronic components per chip. To implement such a sophisticated technology it will be essential to have a fundamental understanding of the solid state interaction between the different materials in thin film semiconductor structures. This is the main purpose of this research program. Characterization and analysis is carried out mainly by Rutherford backscattering spectrometry and channelling using accelerated nuclear particles from the Van de Graaff accelerator, while radioactive isotopes provide information about interaction mechanisms. 6 figs., 1 ref.

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The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.

International Nuclear Information System (INIS)

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump ...

International Nuclear Information System (INIS)

Full Text: Smallstage Dualbeam (SDB) systems, that is a Focussed Ion Beam column coupled with a SEM column, have been around for about five years now. There impact on the Semiconductor industry has been enormous, with virtually every lab having a SDB to produce, characterise and analyse cross sections and TEM samples on the Nano-scale. But what about other industries? What else can SDB system be used for? The SEM column in itself is a very powerful tool for sample characterisation, modification and analysis. An electron beam from a Tungsten or Thermal Field Emission source has enough current to allow sophisticated patterns to be created in photo-resist samples, a process known as lithography. The current is also high enough to allow for a process known as Electron Beam Induced Deposition (EBID), where the beam interacts with an introduced gas and material is deposited in a controlled manner on the sample. With the addition of the Focussed Ion ...

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Extensive research into the treatment and control of Volatile Organic Compounds (VOCs) from semiconductor industry manufacturing processes has identified the need for alternatives to existing combustion devices. Specifically, semiconductor manufacturing design is moving toward exploiting effective, small-scale, abatement control technologies for specific point-of-use (POU) waste streams associated with a particular component or manufacturing tool. The Silent Discharge Plasma (SDP) developed at Los Alamos National Laboratory is a nonthermal plasma technology created by a dielectric-ballasted electrical discharge. Influent gas-phase pollutants are destroyed in the reactor by the free radicals or electrons generated by the plasma. This paper examines the potential for SDP to be used in niche circumstances for POU control of VOC exhaust streams specific to the semiconductor industry. A sensitivity analysis ...

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Perylene bisimides (PBIs) represent an important class of organic n-type semiconductors exhibiting a relatively high electron affinity among large-band-gap materials. Herein synthesis and characterization of several unsymmetrical N-substituted PBI dyes is presented and the thermotropic behavior, which is strongly affected by the respective N-substituents was investigated. Two different series of highly soluble and fluorescent derivatives have been synthesized: (1) PBIs bearing swallow-tailed alkyl chains, different in size or (2) one swallow-tailed alkyl chain and one branched oligoethylenglycolether. Synthesis of these PBIs is generally feasible by two distinct divergent synthesis approaches. Thermotropic behavior was studied by DSC, POM and XRD measurements. Inherent {pi}-{pi} interactions between cofacially orientated perylene molecules and the elliptic shape of the molecule favor the ordering in columns and self-organized architectures. Among them hexagonal ...

KoreaScience (Korea)

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Science.gov (United States)

... nent to the design and construction of metal-semiconductor solar cells, in that both the photovoltage and the efficiency of metal-semiconductor cells ...

CERN Document Server

The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in the NW, the critical supercurrent can be tuned from zero to greater than 100 nA. Furthermore, discrete sub-bands form in the NW due to confinement in the radial direction, which results in stepwise increases in the critical current as a function of gate voltage. Transport measurements on these superconductor-NW-superconductor devices reveal high-order (n = 25) resonant multiple Andreev reflections, indicating that the NW channel is smooth and the charge transport is highly coherent. The ability to create and control coherent superconducting ordered states in ...

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A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.

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The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation ...

International Nuclear Information System (INIS)

Semiconductor quantum dots (QDs) are a promising approach to realize a single-photon source. To avoid bulky and expensive laser systems for future applications, electrical excitation is desirable. InP QDs are especially suited, as they emit in the red spectral range and therefore in the optimal range of commercial detectors. Additionally, they have been shown to be capable of emitting single photons up to 80 K. Thus, we embedded InP QDs in the intrinsic region of a p-i-n diode. To form single devices, 100 #mu#m mesas were etched and supplied with electrical contacts. We investigated the electroluminescence from single QDs and performed second-order auto correlation measurements to verify single-photon emission. To prevent expensive helium cooling and reach operation above 80 K, we investigated the influence of elevated temperature on the performance of our device. Since triggered single-photon emission is required for most ...

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The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an efficient cooling leads to a reduced ...

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Most of the organic electronic devices are nowadays fabricated under poor vacuum conditions. In this regard, there is only little knowledge about the impact of contamination of the metal electrode on the charge injection barrier in this kind of electronic devices. In our study we have performed X-ray and ultra violet photoemission spectroscopy (XPS, UPS) on interfaces between the organic semiconductor -sexithiophene and sputter cleaned (ideal) metals as well as contaminated (realistic) metals. As metal substrates we have used silver, gold, palladium, and platinum. These metals provide us a wide range of metal work functions from 4.2 eV for silver up to 5.5 eV for platinum. For all interfaces of -sexithiophene and contaminated metals we have observed a reduction of the interface dipole and the hole injection barrier. The charge injection barrier in all four cases is almost independent of the underlying metal (within an error ...

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Technology developments in semiconductor fabrication along with a rapid expansion of the market for portable devices, such as PDAs and mobile phones, make the energy consumption of embedded systems a major problem. Indeed the need to provide an increasing number of computational intensive applications and at the same time to maximize the battery life of portable devices can be seen as incompatible trends. System simulation is a flexible and convenient method for analyzinging and exploring the performance of a system or sub-system. At the same time, the increasing use of computational intensive applications strengthens the need to maximize the battery life of portable devices. As a consequence, the simulation of embedded systems for energy consumption estimation is becoming essential in order to study and explore the influence of system design choices on the system energy consumption. The original ...

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A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

UK PubMed Central (United Kingdom)

Nucleic acids are molecules of choice for both established and emerging nanoscale technologies. These technologies benefit from large functional densities of ‘DNA processing elements’...Full Text Available

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We review recent development in separations and mass spectrometric instrumentation for sensitive and high-throughput proteomic analyses. These efforts have been primarily focused on the development of high-efficiency (separation peak capacity of ~103) nanoscale liquid chromatography (nanoLC; e.g., flow rates extending down to ~20 nL/min at optimal separation linear velocities through narrow packed capillaries) in combination with advanced mass spectrometry (MS), including high sensitivity and high resolution Fourier transform ion cyclotron resonance (FTICR) MS. This technology enables MS analysis of low nanogram-level proteomic samples (i.e., nanoscale proteomics) with individual protein identification sensitivity at the low zeptomole-level. The resultant protein measurement dynamic range can reach 106 for nanogram-sized proteomic samples, while more abundant proteins can be detected from complex sub-picogram size proteome samples. The average ...

International Nuclear Information System (INIS)

Space particles act on semiconductor devices by creating charges (electrons, holes) in the silicon and the silicon dioxide, and by creating displacement damage. These primary phenomena alter the electrical parameters of MOS and bipolar devices (threshold voltage V_t, mobility #mu#, conductivity #sigma#, current gain #beta#). The dose rate is not important in space (a few rad (Si)/h) but as the durations of space expeditions are on average from seven to twelve years, the total dose is an aggravating factor in the behaviour of the electrical parameters and also in device operation. The total dose effect from the beginning of charge creation (ionization) to the parameter shifts is reviewed. One can note that this effect is permanent because there will almost always be charge creation in space. Another important phenomenon is called the Single Event Upset (S.E.U.) and caused by the heavy ions and the ...

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An x-ray zone plate was fabricated using the novel approach of focused ion beam (FIB) milling. The FIB technique was developed in recent years, it has been successfully used for transmission electron microscopy (TEM) sample preparation, lithographic mask repair, and failure analysis of semiconductor devices. During FIB milling, material is removed by the physical sputtering action of ion bombardment. The sputter yield is high enough to remove a substantial amount of material, therefore FIB can perform a direct patterning with submicron accuracy. The authors succeeded in fabricating an x-ray phase zone plate using the Micrion 9500HT FIB station, which has a 50 kV Ga{sup +} column. Circular Fresnel zones were milled in a 1.0-{micro}m-thick TaSiN film deposited on a silicon wafer. The outermost zone width of the zone plate is 170 nm at a radius of 60 {micro}m. An achieved aspect ratio was 6:1.

Science.gov (United States)

The strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 deg. C, significantly enhanced Si-Ge interdiffusion is observed in Si/Si{sub 1-y}Ge{sub y}/Si heterostructures (y=0.56, 0.45, and 0.3) with Si{sub 1-y}Ge{sub y} layers under compressive strain of -1%, compared to those under no strain. In contrast, tensile strain of 1% in Si{sub 0.70}Ge{sub 0.30} layer has no observable effect on interdiffusion in Si/Si{sub 0.70}Ge{sub 0.30}/Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and heterostructure-on-insulator metal oxide semiconductor field effect transistors.

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General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for ...

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Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

Science.gov (United States)

Inductively coupled fluorocarbon (CF4/Ar and C4F8/Ar) plasmas were used to etch HfO2, which is a promising high-dielectric-constant material for the gate of complementary metal-oxide-semiconductor devices. The etch rates of HfO2 in CF4/Ar plasmas exceeded those in C4F8/Ar plasmas. The tendency for etch rates to become higher in fluorine-rich (high F/C ratio) conditions indicates that HfO2 can be chemically etched by fluorine-containing species. In C4F8/Ar plasmas with a high Ar dilution ratio, the etch rate of HfO2 increased with increasing bias power. The etch rate of Si, however, decreasd with bias power, suggesting that the deposition of carbon-containing species increased with increasing the power and inhibited the etching of Si. The HfO2/Si selectivity monotonically increased with increasing power, then became more than 5 at the highest tested bias power. The carbon-containing species to inhibit etching of Si play an important role in ...

International Nuclear Information System (INIS)

In this paper, an improved soft switched two cell interleaved boost AC/DC converter with high power factor is proposed and investigated. A new auxiliary circuit is designed and added to two cell interleaved boost converter to reduce the switching losses. The proposed auxiliary circuit is implemented using only one auxiliary switch and a minimum number of passive components without an important increase in the cost and complexity of the converter. The main advantage of this auxiliary circuit is that it not only provides zero-voltage-transition (ZVT) for the main switches but also provides soft switching for the auxiliary switch and diodes. Though all semiconductor devices operate under soft switching, they do not have any additional voltage and current stresses. The proposed converter operates successfully in soft switching operation mode for a wide range of input voltage level and the load. In addition, it has advantages such as fewer structure ...

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

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No abstract prepared.

KoreaScience (Korea)

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We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for ...

International Nuclear Information System (INIS)

In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO_2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were electrically ...

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Energy Technology Data Exchange (ETDEWEB)

Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

International Nuclear Information System (INIS)

2009 p. 143-144 Ukraine Lepikh, Ya.I. Odesa National University, Odesa

Science.gov (United States)

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

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Motivation is given for a technique to more thoroughly test semiconductor equipment control systems. A description is given of a simulator-based control system testing technique. Potential benefits that could be realized by using this technique in the semiconductor industry as well as benefits documented by using this technique in other industries are described. Specific requirements for using the technique in the semiconductor industry are outlined. A summary of a survey of nine commercial simulation systems is given. Finally, the outcome of the survey is compared with the requirements for using the technique.

British Library Electronic Table of Contents (United Kingdom)

The adhesion strength of polybutylene terephthalate (PBT) on aluminum was investigated using density functional theory-based total energy calculations. Aluminum atom was connected to a PBT monomer at different orientations and total energies were calculated in order to determine the most stable orientation. The energy differences showed that the Al oriented at 180degree with the ester group of the monomer bonded strongly. Using this orientation, the PBT monomer-adhesion on aluminum surface and the aluminum atom adhesion on PBT bulk were also investigated.

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The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 {times} 10{sup 10} {alpha}/cm{sup 2} produced a near linear decrease in peak position with fluence and increases in FWHM ...

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There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

International Nuclear Information System (INIS)

The principle of conservation and transferability of chemical bonds explains the recent discovery by extended x-ray absorption fine-structure measurements of two unequal anion-cation bond lengths R/sub A/C and R/sub B/C in A/sub x/B/sub 1-x/C zinc-blende semiconductor alloys despite the close adherence of the lattice constant to the average value (Vegard rule). This bond alternation, manifested as a structural distortion to a local chalcopyrite coordination around the anions, explains also most of the observed optical bowing in semiconductor alloys.

Science.gov (United States)

This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.

International Nuclear Information System (INIS)

Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account according to the Loewdin procedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of Gamma/sub 15c/ and Gamma/sub 12c/ bands) and the inverse dependence on the magnitude of the spin-orbit splittiing is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semiconductors, except for materials with a very strong nonparabolicity of the band of silicon type.

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This paper addresses one source of degradation in OPV devices: the metal/organic interface. The basic approach was to study the completed device stability vs. the stability of the organic film itself as shown in subsequent devices fabricated from the films.

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The object of this work is to develop and optimize a new type of light-emitting diode (LED) with a wire-shaped, cylindrical geometry.

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The formation of palladium silicides near the interface may decrease hydrogen solubility at the effective metal/semiconductor ...

International Nuclear Information System (INIS)

2009 p. 77-78 Ukraine Lepikh, Ya.I. Fedchuk, AP Odesa National University,

International Nuclear Information System (INIS)

Russian 1977. p. 582. USSR Antropov, AE Fedoseeva, OP Milovanov,

British Library Electronic Table of Contents (United Kingdom)

A type of Si3N4-based nanocomposites ceramic cutting tool material was prepared by the addition of nano-scale Si3N4W whisker and nano-scale TiN particle. Cutting performance of the Si3N4/Si3N4W/TiN nanocomposite ceramic tool in machining of cast iron was investigated in comparison with a commercial sialon ceramic tool, and the tool wear mechanism was studied. The two types of cutting tools have similar cutting performance at relatively low cutting parameters, while Si3N4/Si3N4W/TiN nanocomposite tool exhibits a better wear resistance than sialon tool at the relatively high cutting parameters. The wear of sialon ceramic cutting tool is dominated by the plastic deformation, abrasive action, microcracking, pullout of grains and chemical action at the higher cutting parameters. The higher mech...

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A monolithic micromachined waveguide device or devices with low-loss, high-power handling, and near-optical frequency ranges is set forth. The waveguide and integrated devices are capable of transmitting near-optical frequencies due to optical-quality sidewall roughness. The device or devices are fabricated in parallel, may be mass produced using a LIGA manufacturing process, and may include a passive component such as a diplexer and/or an active capping layer capable of particularized signal processing of the waveforms propagated by the waveguide.

International Nuclear Information System (INIS)

A carbon nanotube (CNT) tip, which assembled on the sharp end of a Si tip by dielectrophoresis, was structurally modified using focused ion beam (FIB). We described the imaging characterization of the FIB-modified CNT tip in noncontact AFM mode in terms of wear, deep trench accessibility, and imaging resolution. Compared to a conventional Si tip, the FIB-modified CNT tip was superior, especially for prolonged scanning over 10 h. We conclude that modified CNT tips have the potential to obtain high-quality images of nanoscale structures.

International Nuclear Information System (INIS)

To calculate the energy band structures in semiconductors using the relativistic augmented plane wave method, atomic potential and charge density are needed, which are calculated by self-consistent method. Wave function for one electron is determined by solving the Dirac equation with the Hartree-Fock equation based on the slater's exchange potential. The results of calculation for Cu"+"1 are given. (Author).

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For a wider application of GaAs single crystals for semiconductor devices a cheaper process to grow crystals with high purity and low dislocation density is required. According to todays knowledge the Czochralski method with a hot wall vessel should be the choice. The temperature of the vessel has to be 700deg C to avoid condensation of arsenic which vapourizes from the 1240deg C hot melt. Arsenic vapour is very agressive against all metals. Therefore the corrosion resistance of metals and alloys with a high melting point and also ceramics has been tested. All the alloys under investigation are corroded severely so that they have to be excluded as a material for the vessel. The metals tantalum, molybdenum and tungsten are more resistent, titanium forms initially a thick protection layer and further corrosion is greatly reduced. The ceramics investigated (TiB{sub 2}; ALN; Makor; BN) are not attacked by arsenic though they may store some arsenic. ...

International Nuclear Information System (INIS)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both ...

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The device is designed for automatic testing of the degree of discharge of tractive storage batteries (AB) for electric loaders, electric cars and electric ore locomotives. The basic electrical schematic of the device is cited.

British Library Electronic Table of Contents (United Kingdom)

The thermal stability of nanoscale grains in cryomilled aluminum powders containing 1% diamantane was investigated. Diamantane is a diamondoid molecule consisting of 14 carbon atoms in a diamond cubic structure that is terminated by hydrogen atoms. The nanostructures of the resulting cryomilled powders were characterized using both transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. The average grain size was found to be on the order of 22?nm, a value similar to that obtained for cryomilled Al without diamantane. To determine thermal stability, the powders were heated in an inert gas atmosphere at constant temperatures between 423 and 773?K (0.51T m to 0.83T m) for exposure times of up to 10?h. The average grain size for all powders containing diamantane was obse...

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The relationship between microstructure and macro properties of different cementitious materials has been investigated. This study consists of the following tasks: using NMR and IR to better characterize the amorphous and poorly crystalline phases that occur in blended cements; characterizing the microstructure of the hydration products of modified Portland cement as a function of different percentages of pozzolan replacements by ESEM, SEM, and EDS; comparing the properties of blended cement pastes with a control group of normal Portland cements; and studying the engineering aspects of blended cement that are important for identifying and characterizing fundamental phenomena that are responsible for their durability. The overall influence of the nanoscale and microscale structure of blended and Portland cement on the properties of the resultant composite will be discussed.

British Library Electronic Table of Contents (United Kingdom)

The objective of materials research is the development of economical, safe and efficient synthesis routes that lead to the formation of a photocatalyst which is able to overcome performance problems related to particle size, crystallinity, or low surface area. Here, we report high-quality functional nanoparticles of calcium bismuth mixed oxide with 15nm nominal size corresponding to a specific surface area of 41m^2/g which were produced by single-step flame spray synthesis (FSS). The high temperature of the flame afforded creation of oxygen vacancies which were quantified by near edge X-ray absorption fine structure (NEXAFS) spectra. These two parameters, developed active surface area and created in the flame oxygen vacancies, allowed to enhance the photocatalytic activity of calcium bismu...

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Nanoscale islands of Cu2O have been synthesized on single-crystal SrTiO3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (OPA-MBE). Island growth location has been controlled by using an ex-situ Ga+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. Analysis of Cu2O dot growth on unmodified substrate regions revealed an evolution of dot size and array density. Atomic force microscopy studies show that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of islands. Islands initially formed in the FIB-generated surface topography and filled those features before nucleating on neighboring unmodified surface regions.

Energy Technology Data Exchange (ETDEWEB)

Nanoscale islands of Cu?O have been synthesized on single crystal SrTiO? (100) substrates using oxygen plasma assisted molecular beam epitaxy (MBE). Island growth location has been controlled by using an ex-situ Ga? focused ion beam (FIB) to modify the growth surface in discrete locations prior to island sythesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex-situ AFM study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

Environmental Research Database

Objectives1. We will use reduction of lysosomal stability as an indicator of cell injury induced by C-60 fullerenes and carbon nanotubes in the liver analogue or digestive gland (hepatopancreas) of marine mussels. Molluscan hepatopancreatic digestive cells are key to normal function and are a sensitive key interface with the environment. Reduction of lysosomal stability is mechanistically linked with impaired health of the whole animal. 2. We will also test the hepatopancreatic digestive cells for evide [continued...]DescriptionNanotechnology is a major innovative scientific and economic growth area, which may present a variety of hazards for environmental and human health. The surface properties and very small size of nanoparticles and nanotubes provides surfaces that may bind and transport toxic chemical pollutants, as well as possibly being toxic in their own right by generating reactive oxygen species (ROS). There is a wealth of evidence for the harmful effects of ...

International Nuclear Information System (INIS)

Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.

Energy Technology Data Exchange (ETDEWEB)

Following comprehensive research nanomaterials or products which were either still in a re-search/development status or are already available in the marketplace were identified for the water and air sectors. Based on life cycle assessments for two case studies, it was checked how the potential benefits and impacts on the environment for nanotechnology products or processes compare with those for conventional solutions. The first case study deals with the solar treatment of water contami-nated with tetrachloroethylene, comparing nanoscale titanium dioxide (photo-catalysis) and a photo-Fenton process. The second case study on air filtration compares a passenger car cabin-air filter with nanofibres and a conventional filter. (orig.)

British Library Electronic Table of Contents (United Kingdom)

A ferritic steel with finely dispersed precipitates was investigated to reveal the fundamental strengthening mechanisms. The steel has a yield strength of 760MPa, approximately three times higher than that of conventional Ti-bearing high strength hot-rolled sheet steels, and its ultimate tensile strength reaches 850MPa with an elongation-to-failure value of 18%. Using energy dispersive X-ray spectroscopy (EDXS) and transmission electron microscope (TEM), fine carbides TiC with an average diameter of 10nm were observed in the ferrite matrix of the 0.08%Ti steel, and some cubic M23C6 precipitates were also observed at the grain boundaries and the interior of the grains. The finely dispersed TiC precipitates in the matrix provide matrix strengthening. The estimated magnitude of precipitation ...

International Nuclear Information System (INIS)

This section of the report is concerned with the study of the metallisation, oxidation and doping of materials which are of importance to the micro-electronics industry. The Van de Graaff accelerator and radioactive tracers are used for studying surface and sub-surface behaviour of these materials.

Energy Technology Data Exchange (ETDEWEB)

A theory has been developed for the mechano-catalytic water-splitting, which is the system of simultaneous H{sub 2} and O{sub 2} evolution by stirring the powder of an oxide semiconductor in pure water under the condition that the stirring rod must be kept in contact with the surface of the glass vessel. The kinetic equations and the coupling strength of the frictional energy conversion between mechanical and electrical systems are calculated . The total system composed of the formation of the dangling bonds on the glass surface, the trapping of the semiconductor particles at the microcrevice of the glass surface, the strong field inside the fine particles due to the frictional electricity, the mechanism of charge transfer from the semiconductor to the stirring rod, the hopping conduction of positive hole, the electric current density injected into water from the semiconductors, and the tunnel chemical ...

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A comparitive analysis is made of the principal characteristics of narrow-band and conventional semiconductor light amplifiers. It is shown that quasi-distributed filtering of the spontaneous radiation ensures a high gain and a low level of the spontaneous noise at the amplifier output.

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

Science.gov (United States)

... and technology-. The United States National Technology Roadmap for Semiconductors [ 11 still ... Moreover, higher volumes of production, better manufacturing capabilities and ... energy-efficient, reliable, high-performance, embedded (real-time), highly miniaturized, .... Optical Computing, Storage, and Communications. ...

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Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

British Library Electronic Table of Contents (United Kingdom)

A problem of the catalytic activity definition for metals, binary metallic alloys, and semiconductor materials is considered within new quantum mechanical and electrodynamics approach in the electron theory of catalysis. The quantitative link between the electron structure parameters of the materials and their catalytic activity on example of simple model reactions of the following type are found: H = H+ + e, O2 + e- = O2-. Copyright 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009

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Science.gov (United States)

... in the terminal state and ... Descriptors : (*OPTIMIZATION, *STOCHASTIC PROCESSES), (*INPUT ... DEVICES, OPTIMIZATION), QUEUEING THEORY ...

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Energy Technology Data Exchange (ETDEWEB)

Short communication.

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International Nuclear Information System (INIS)

... fluidic control devices performance reactor control systems space propulsion

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A centering device for casing tubings is proposed. It includes a housing, collar made of copper linings, return springs and pusher with centering pins placed in it. In order to simplify the design of the centering device it is equipped with levers installed on the pusher rod and connected by hinges to one another. The centering device assures coaxial placement of tubes over the mouth of wells and installation of butt joints during welding of tubes.

Energy Technology Data Exchange (ETDEWEB)

Achieving device independence for software applications is required for all but a small number of critical real time applications. Device independence is achieved by establishing protocols and building protocol interpreters for the specific devices. Data structures containing pointers to functions provide a flexible architecture for implementing protocol translation. 3 refs., 5 figs.

KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

In the PV system with storage batteries, as a maximum power point tracking (MPPT) device is used to enhance battery charging, the enhancement must be greater than the internal loss of the device itself, or there will be no net gain at all. To evaluate the MPPT device benefits under different climate, the theoretical calculation models have been constructed. By simulation, a comparative study between two types of PV charge controllers with and without a MPPT device under different atmospheric conditions was presented. The comparison was made by means of the energy production obtained from the PV generator of each system. The climatic conditions of Beijing and Guangzhou in China have been regarded. From the results obtained it can be concluded that the effectiveness of the MPPT device in Guangzhou is not very obvious, however the MPPT device did greatly enhance ...

International Nuclear Information System (INIS)

This paper presents a rationale for and a summary of tasks and missions to which mobile and stationary robots and other teleoperator-controlled devices could be assigned in response to the accidental release of radioactive and other hazardous/toxic materials to the environment. Many of these vehicles and devices currently support operation and maintenance of nuclear power plants and other nuclear industry facilities. This paper also discusses specific missions for these devices at the Three Mile Island and Chernobyl nuclear power plant sites at the time of the accidents. Also discussed is the status of devices under development for future applications, as well as research on robotics.

International Nuclear Information System (INIS)

Remote-controlled handling systems are required for work to be done in the decommissioning and dismantling of nuclear facilities. These systems are equipped with electronic devices suitable for use in working environments affected by ionizing radiation. The publication explains the step-wise progress achieved for improving the radiation resistance of electronic devices with the example of a four-quadrant controlling device for the motors of a manipulator. The radiation resistance of the device could be enhanced to radiation energies of 5.500 Gy. This means that a manipulator vehicle equipped with this controlling device can take up to approx. 15 kGy all in all, taking into account its own shielding properties. (DG).

International Nuclear Information System (INIS)

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al_0_._5Ga_0_._5As and In_0_._5_3Ga_0_._4_7As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, E(#GAMMA#_1_c) of AlP, E(L_1_c) of AlAs, and E(L_1_c) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related properties are also examined in this work. The many-body corrections to ...

Energy Technology Data Exchange (ETDEWEB)

Four general topics are covered in respect to the natural space radiation environment: (1) particles trapped by the earth`s magnetic field, (2) cosmic rays, (3) radiation environment inside a spacecraft, (4) laboratory radiation sources. The interaction of radiation with materials is described by ionization effects and displacement effects. Total-dose effects on MOS devices is discussed with respect to: measurement techniques, electron-hole yield, hole transport, oxide traps, interface traps, border traps, device properties, case studies and special concerns for commercial devices. Other device types considered for total-dose effects are SOI devices and nitrided oxide devices. Lastly, single event phenomena are discussed with respect to charge collection mechanisms and hard errors. (GHH)

UK PubMed Central (United Kingdom)

Purpose: The authors have developed a novel technique using an electronic portal imaging device (EPID) to verify the geometrical accuracy of delivery of dose-rate-regulated tracking (DRRT)....Full Text Available

Science.gov (United States)

... Biomedical Engineering Optical and Photonic Materials and Devices Fundamental Optical Interactions ... of Texas Medical School OPTICAL AND PHOTONIC MATERIALS AND DEVICES Gary Bjorklund, IBM, Chair Nan ...

Science.gov (United States)

A device for reducing the muzzle blast and flash from large caliber guns is disclosed. A container having a plurality of internal chambers and baffle plates filled with an aqueous foam is mounted to the muzzle of the gun barrel. The foam and chambers co-o...

UK PubMed Central (United Kingdom)

The purpose of this study was to determine whether the use of wheeled mobility devices differed with respect to age, gender, residential setting, and health-related factors among older adults. A total...Full Text Available

Science.gov (United States)

This design manual contains descriptions of design procedures and operating experience to date, including results obtained, for secondary flow pollution control devices. Two types of combined sewer overflow regulators are described: the swirl and the helical bend regulator/separa...

UK PubMed Central (United Kingdom)

BackgroundDuring surgery, controlled haemostasis to prevent blood loss is vital for a successful outcome. It can be difficult to ligate vessels located deep in the abdomen. A device...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

This dissertation deals with both the theoretical and the technological aspects of monolithic tunable lasers, and the experimental techniques for opto-electronic integration. In the theoretical part, the principles and limitations of wavelength tuning and spectral linewidth reduction in monolithic semiconductor lasers are described, with coupled distributed feedback-Fabry Perot (DFB-FP) lasers and long DFB lasers as examples. Stepwise tuning of wavelength over tens of nanometers and continuous tuning over the range of a mode spacing are shown to be possible. Spatial hole burning is found to affect the spectral linewidth of lasers involving strong active gratings. On the technological side, one of the major issues is the fabrication of flexible gratings. Direct-writing techniques, such as focused ion beam (FIB) implantation and e-beam lithography, provide the resolution, flexibility and accuracy that conventional holographic lithography lacks. The parasitic ...

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In this work it is made a study of the structure and electric properties of chlorate polyethylene (PE-CI) with double and simple bonds obtained by continuous plasma with resistive coupling to 13.5 MHz. The synthesis conditions are power between 10 and 14 W and pressure of (6-7) x 10{sup -2} Torr. The synthesized PE-Cl in that way is soluble in acetone what indicates that probably is formed of short chains and not it shows the generalized inter crossing that is presented in some syntheses by plasma and that it can degrade the electric properties of these polymers. The IR and XPS analysis show the vibration of the C-C, C=C and C-CI bonds. The morphology of the polymer after being dissolved shows a compact and flat configuration. The electric conductivity has an approximately lineal behavior in an interval of 35 to 90% of relative humidity. (Author)

International Nuclear Information System (INIS)

An overview on neutron scattering studies of ferromagnetic and antiferromagnetic all-semiconductor superlattices is presented. Diffraction experiments on MnTe/CdTe, MnTe/ZnTe and EuTe/PbTe superlattices show pronounced correlations between the MnTe and EuTe layers across the non-magnetic spaces, even though these layers are antiferromagnetic and the systems are nearly-insulating. Current theory status of these systems is discussed. Diffractometry and reflectometry data from EuS/PbS superlattices reveal pronounced antiferromagnetic coupling between the ferromagnetic EuS block. First polarized neutron reflectometry data from superlattices prepared of a novel ferromagnetic 'spintronics' material, Ga(Mn)As are also presented. (author)

Science.gov (United States)

The excess energy of several III-V and II-VI strained-layer semiconductor superlattices ({ital AC}){sub {ital p}}(BC){sub p} is studied as a function of the repeat period {ital p} and orientation {bold G}=(001), (110), (111), and (201), using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all {ital p}'s and {bold G}'s with respect to {ital bulk} disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin {ital epitaxial} (110) and (201) and most common-anion (001) superlattices relative to coherent phase separation.

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Mass and charge distributions of products from fission of sup(242m)Am induced by thermal neutrons have been investigated by means of the semiconductor spectrometry of ..gamma.. radiation from a mixture of non-separated fragment nuclei. Specimens of the fissible material have been irradiated in the vertical experimental channel of the research reactor then the measurements have been performed with calibrated semiconductor detectors. Three experiments with substantially different irradiation times have been performed to expand the nomenclature of the investigated fission products. The spectra of ..gamma.. radiation from the mixture of fission products, and time dependences of the counting rates at the total absorption peaks have been handled with computers. The obtained yields are compared with data of previous investigations performed with different experimental methods, as well as with the calculated one.

CERN Document Server

We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

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The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

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Using carbon-paste-CuFeS{sub 2} electrodes and a cyclic voltammetric technique, it was found that a large number of intermediate electrochemical oxidation reactions were associated with the dissolution of chalcopyrite in presence and absence of bacteria. The effects of concentrations of copper, ferrous and ferric ions, as well as of agitation on the peaks of cyclic voltammograms were measured. It was established that chalcopyrite oxidation was solid-state controlled as suggested by the data of chronopotentiometric and chronoamperometric measurements. The activation energy of solid state diffusion of chalcopyrite leaching was determined by the Sand's method to be {triangle}E{sub a} = 20.5 kJ. The leaching mechanism is discussed in terms of solid-state properties (energy bonding) of the n-type semiconductor chalcopyrite and energy density states of redox systems of acidic bacterial leach media. A generalized model for the mechanism of chalcopyrite leaching ...

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

International Nuclear Information System (INIS)

The energy deposited by the passage of a single, energetic, heavy-ion through a semiconductor produces dense electron-hole (eh) pair concentrations near the ion trajectory. The size, shape, and charge density of an ion track represent critical parameters for many models of single event phenomena. The authors describe the design and uses of possible semiconductor test structures for measuring the initial radial distribution of charge and subsequent charge transport in a high energy, heavy-ion track. Numerical simulations show how the test structure can resolve different radial distributions of charge within an ion track. The test structure simulations also show the importance of accurately representing ion track structure in single event effects simulations.

Energy Technology Data Exchange (ETDEWEB)

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

International Nuclear Information System (INIS)

The influence of the main factors on device efficiency of pulsed liquid jet pump with gas-liquid piston is analysed, the theoretical equation and its time-averaged solution of pulsed liquid jet pump device efficiency are derived. The theoretical and experimental results show that the efficiency of transmission of energy and mass to use pulsed jet is greatly raised, compared with steady jet, in the same device of liquid jet pump. The calculating results of time-averaged efficiency of pulsed liquid jet pump are approximately in agreement with the experimental results in our and foreign countries

Science.gov (United States)

... Abstract : MANY THIN FILM ACOUSTO-OPTIC INTERACTION EXPERIMENTS FOR ... CONVERTERS, AND FOR FAST SWITCHES HAVE BEEN ...

International Nuclear Information System (INIS)

... Union (INTAS), Brussels (Belgium) Science and Technology Center in Unkraine,

Science.gov (United States)

... This is achieved by the use of a unique logic circuit employing a plurality of flip-flop devices, multivibrators and AND gates. ...

Science.gov (United States)

... increasing photorealism. Furthermore, developments in audio technology continue to increase the spatial awareness of users in VEs. ...

Energy Technology Data Exchange (ETDEWEB)

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

J-STORE (Japan)

Full Text Available

Science.gov (United States)

... initiation) Pressed e Combustible Cartridge Cases Quantity-Distance Table ... Combustible Cartridge Cases, and Electrically Exploded Devices in ...

CERN Document Server

voltammetric methods. This remained evident for varying extents of silver dissolution. Ag(111) electrodes were oxidised in 0.1 M KCIO sub 4 solutions by a single swept ORC of 0.77x10 sup - sup 3 C cm sup - sup 2. The final rest potential of the Ag(111) working electrode was over the potential range of -36 mV to 114 mV versus the SCE where the silver islands of the reformed surface are believed to be unstable. Results show that a majority of silver islands of all sizes are stable with time, whereas the silver islands with irregular shapes tended to evolve to exhibit higher degrees of spherical geometry. Additionally, the position of the silver islands did not remain constant during the acquisition of STM images. Results from in situ STM demonstrated that the underlying step-terrace morphology of the Ag(111) electrodes did not remain constant with time. Both macroscale and nanoscale changes to the Ag(111) electrode surface were observed. It is concluded that this is ...

International Nuclear Information System (INIS)

Focused Ion Beam (FIB) milling is a powerful tool to produce ordered magnetic nanostructures. However, it is impossible to produce out-of-plane magnetized nanoscale structures from multilayer films by direct FIB writing. Co/Pt multilayers exhibit an out-of-plane easy axis due to strong perpendicular interface anisotropy. The interface contribution is known to be very sensitive to high energy ion irradiation. In case of 30 keV Ga ions it needs less than one ion per 100 surface atoms to destroy the perpendicular interface anisotropy. We demonstrate how this problem can be overcome by milling a Co/Pt multilayer, which has been deposited on a SiN membrane, from the rear side, through the SiN. The effect of the ions is determined as a function of applied dose utilizing the domain structure imaged by soft X-ray holography. When the magnetic material is removed we find only a very narrow range of destruction around the holes in contrast to the observations when milling ...

International Nuclear Information System (INIS)

Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Investigation of the sputtering rate of NiTi shape memory alloys using Ga and Bi LMIS showed that, for ...

International Nuclear Information System (INIS)

Research highlights: #-># Morphological and chemical characterization at atomic scale of porous alumina layers anodised in ordered regimes. #-># Characterization based on the use of FEG-SEM, STEM-HAADF, STEM-EELS and STEM-X-EDS. #-># Nanoscale distribution of P-, C- and S-bearing species in the pore wall. - Abstract: Ordered porous alumina layers prepared by two-step anodising in phosphoric, oxalic and sulphuric acids have been characterized at sub-nanometer scale using electron microscopy techniques. FEG-SEM and STEM-HAADF images allowed estimating the pore size, cell wall and pore wall thicknesses of the layers. Nanoanalytical characterization has been performed by STEM-EELS and STEM-X-EDS. Detailed features of the spatial distribution of anions in the pore wall of the films have been obtained. Maximum concentration of P-species occurs, approximately, at the middle of the pore wall; adjacent to the pore for C-species, whereas the distribution of ...

International Nuclear Information System (INIS)

Small-angle X-ray scattering method recognised to be very useful in the studies of structural problems of materials in homogeneous in nanoscale. Studies by small-angle X-ray scattering on the Al-Ag alloys are presented. The size distributions of spherical Guinier-Person zones were calculated using Vonk's and Glatter's methods. Small-angle X-ray scattering studies were performed on Al-5.0 at.%Ag alloy containing Guinier-Preson zones in the #eta#-state. For this alloy one can assume that scattering particles are of spherical shape, have uniform electron density and scatter independently. Moreover, the size distributions were calculated for Al-1.6 at.%Ag alloy containing Guinier-Preston zones in #epsilon#-state (scattering particles with not uniform electron density). Both, Vonk's and Glatter's, methods gave similar size distributions. Profiles of size distributions for Guinier-Preston zones in #epsilon#-state are more complex in comparison to Guinier-Preston zones in ...

Energy Technology Data Exchange (ETDEWEB)

A slurry intake device is proposed which contains an inlet sleeve, housing with grating installed with the discharge end in the zone of the slurry outlet, and hinged deflector. In order to conserve the clay mud, it is equipped with a tie rod and two-arm lever which is kinematically linked to the deflector and the grating. It is installed by hinges in relation to the housing and the latter is attached by hinges to the inlet sleeve. The deflector is arranged in the zone of slurry outlet. The device is distinguished by the fact that the deflector is equipped with a cantilever on which a fixable weight is attached.

Energy Technology Data Exchange (ETDEWEB)

A method and apparatus is provided for detecting explosives by thermal imaging. The explosive material is subjected to a high energy wave which can be either a sound wave or an electromagnetic wave which will initiate a chemical reaction in the explosive material which chemical reaction will produce heat. The heat is then sensed by a thermal imaging device which will provide a signal to a computing device which will alert a user of the apparatus to the possibility of an explosive device being present.

Science.gov (United States)

The dynamic behavior of electrooptic bistable devices with delayed feedback is investigated theoretically and experimentally. The operation principle of the system is analyzed by the method of iterated maps. Stable, bistable, periodic, higher periodic, and chaotic solutions are discussed and realized experimentally by using an integrated Mach-Zehnder interferometer on LiNbO3 as a basic nonlinear element. Taking into account the periodic modulator characteristic, the application of this device as a simple and fast bistable and monostable multivibrator is demonstrated. In addition, the synchronization properties of the astable multivibrator are investigated.

Energy Technology Data Exchange (ETDEWEB)

This is a patent for a device to increase compaction of the loaded batch in a coking chamber that assures a balanced compaction of the batch from the upper to the bottom layer. The leveling rod has a device on the external end that causes the rod to shift vertically and bring pressure on the material and the pressing attachment. Opposite the loading hoppers of the coking chambers there are guides that ensure the rod will be sunk perpendicularly into the loaded material.

International Nuclear Information System (INIS)

Large scale flows of liquids can be controlled by using power fluidic devices that harness the hydrodynamic properties of liquids rather than use moving parts. Included among the fluidic devices considered are fluidic pumps, reverse flow diverters, fluidic diodes and vortex amplifiers. These devices are of potential use in the nuclear industry, particularly in reprocessing. (U.K.).

Energy Technology Data Exchange (ETDEWEB)

Micron-size Ni-base alloy (NBA) powders were mixed with both 1.5 wt.% (hereinafter %) micron-size CeO{sub 2} (m-CeO{sub 2}) and also 1.5% and 3.0% nano-size CeO{sub 2} (n- CeO{sub 2}) powders. These mixtures were coated on low-carbon steel (Q235) by 2.0 kW CO{sub 2} laser cladding. The effects on the microstructures, phases and electrochemical corrosion of the coatings upon the addition of m- and n- CeO{sub 2} powders to NBA (m- and n- CeO{sub 2} /NBA) have been investigated. The results showed that a smooth coating was prepared under suitable processing parameters (P= 2.0 kW, V= 180 mm min{sup -1}) by adding 1.5% n- CeO{sub 2}. In addition to the primary phases of {gamma}-Ni, Cr{sub 23} C{sub 6} and Ni{sub 3} B in the Ni-base alloy coating, CeNi{sub 3} was formed in Ni-base alloy coatings with both n- CeO{sub 2} and m-CeO{sub 2} particles, and CeNi{sub 5} appeared in the coating upon decreasing the size of CeO{sub 2} particles. Well-developed dendrites were observed in the Ni-base ...

International Nuclear Information System (INIS)

A real time neutron radiography system has been developed at the University of Michigan Phoenix Memorial Laboratory (PML) and has recently been used to test the imaging capabilities of a neutron imaging device developed by Lixi, Inc. of Downers Grove, Ill. This device uses an input phosphor that is high in gadolinium to generate a light image which is then sent through an intensifier stage to provide images that can be viewed by eye, video camera, or standard 35 mm camera. It was determined that this device provides images of much higher resolution and sensitivity than those obtained with the imaging system currently being used at PML. Using computerized image enhancement techniques, the images obtained with the Lixi neutron imaging device can then be further enhanced or processed to obtain quantitative information on the object being imaged. (orig.).

Energy Technology Data Exchange (ETDEWEB)

A method and device have been provided for distinguishing Africanized honeybees from European honeybees. The method is based on the discovery of a distinct difference in the acoustical signatures of these two species of honeybees in flight. The European honeybee signature has a fundamental power peak in the 210 to 240 Hz range while the Africanized honeybee signature has a fundamental power peak in the 260 to 290 Hz range. The acoustic signal produced by honeybees is analyzed by means of a detecting device to quickly determine the honeybee species through the detection of the presence of frequencies in one of these distinct ranges. The device includes a microphone for acoustical signal detection which feeds the detected signal into a frequency analyzer which is designed to detect the presence of either of the known fundamental wingbeat frequencies unique to the acoustical signatures of these species as an indication of the ...

Energy Technology Data Exchange (ETDEWEB)

An electronically controllable apparatus is described which modulates a continuous wave laser beam so as to produce an output beam consisting of coherent ''pulses'' that are electronically controllable as to both pulse repetition rate and pulse width. The apparatus includes two acoustic devices positioned so that the laser beam passes through them in sequence, and apparatus or for passing sound waves through the devices to frequency shift the laser radiation as well as to diffract it. Each acoustic device such as generates sound waves containing a group of frequencies which result in spaced pulses. The spreading of a laser beam at which emanates from the first acoustic device is countered by the second acoustic device to produce a collimated, coherently pulsed, laser beam.

Energy Technology Data Exchange (ETDEWEB)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Science.gov (United States)

Steady-state and transient behavior of the longitudinally pumped semiconductor laser is theoretically investigated by using a rate-equation model with distributed gain and photon density. Conditions necessary for bistable operation are derived. Dependencies of such major switching characteristics as turn-on and turn-off powers, delay, and rise times on laser parameters are examined. Influences of spontaneous radiation, impurities, and Auger recombination are studied. The results offer an explanation for the observed nonlinear behavior of face-pumped lasers.

International Nuclear Information System (INIS)

Determination of Cr, Fe, Cu, Zn and Pb in drinking water preconcentrated on a chelating ion exchanger of Czechoslovak production is described. The analytical system consisted of a radionuclide source "2"3"8Pu, a Si/Li semiconductor detector and a multichannel analyzer. Results are compared with trehshold limit values recommended for drinking water. (author) 9 refs.; 2 figs.

International Nuclear Information System (INIS)

This study mainly concerns medical explorations by radioisotopes. Detectors with medical exams and applications are described. Ionisation chambers, semiconductor detectors and scintillation counters are also presented. Uses of radioisotopes in medicine in vivo and in vitro techniques are explained. Examples of scintiscanning are given like: angiography, nuclear cardiography and thyroid scintiscanning. The importance of the study is to present a panorama of nuclear medicine laboratories -at the time- in hospitals in Lebanon.

International Nuclear Information System (INIS)

X-ray scattering methods suitable for the investigation of the morphology and chemical composition of self-organized quantum dots and quantum wires are reviewed. Their application is demonstrated in experimental examples showing that a combination of small angle X-ray scattering with high-resolution X-ray diffraction can reveal both the shape and the chemical composition of the self-organized objects. (author)

International Nuclear Information System (INIS)

Elements Ti, Mn, Fe, Ni, Cu, Zn, Pb, Br, Rb and Sr were determined by the method of radionuclide X-ray fluorescence analysis with semiconductor detection in samples of Taraxacum officinale from various localities of Bratislava. The dependence of their content on the source and the degree of the air pollution was found out. (author).

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence method was used for the determination of Fe and Zn in healing plants (Sage, Peppermint, Stinging, Common Agrimony, Milfoil, Ribwort, Tansy, White Dead-Nettle). "2"3"8Pu exciting source and Si/Li semiconductor detector were used for the determination. (author)

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence method with Si/Li semiconductor detector and "2"3"8Pu exciting source was used for the determination of Cu, Ni, Pb, and Zn in soil samples from various localities near the D-61 Bratislava-Trnava highway (CSFR). (author) 1 ref.; 1 tab.

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

Energy Technology Data Exchange (ETDEWEB)

An original device and a method of its application for restoring of the function of relatively incompetent valves (both patented) are elaborated. Application of the new device allows to lower the difficulty of surgical treatment, to decrease the duration of operation and post-operative period. The long-term results of six-year long experience of its application are presented. The patients examination after 2,5-3,0-year post-operation period shows perfect vein valve correction. A device for stone extraction from tubular organs (patented) fabricated with titanium nickelide superelastic alloy is presented. The new suggested design is free of the drawback inherent in the previous one. The working element of the device is formed as a truncated cone or a truncated cone coaxial with the cylinder (the previous design was formed as a full cone) that prevents overstraining and residual strain accumulation during ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated tailoring damage effects of explosive devices by addition of unconventional materials, specifically combustible metals. Initial small-scale as well as full-scale testing has been performed. The explosives functioned to disperse and ignite these materials. Incendiary, enhanced-blast, and fragment-damage effect have been identified. These types of effects can be used to extend the damage done to hardened facilities. In other cases it is desirable to disable the target with minimal collateral damage. Use of unconventional materials allows the capability to tailor the damage and effects of explosive devices for these and other applications. Current work includes testing of an incendiary warhead for a penetrator.

International Nuclear Information System (INIS)

Field Programmable Gate Arrays (FPGAs) are being used in space applications because of attractive attributes: good density, moderate speed, low cost, and quick turn-around time. However, these devices are susceptible to Single Event Upsets (SEUs). An approach using triple modular redundancy (TMR) and feedback was developed for flip-flop hardening in these devices. Test data showed excellent results for this circuit topology. Total dose and Single Event Effect (SEE) testing have been performed on recently released technologies. Failures are analyzed and test methodology is discussed.

Energy Technology Data Exchange (ETDEWEB)

Recently, organic semiconducting materials have gained a broad interest due to their potential for organic electronic devices such as organic light emitting diode (OLED), organic photovoltaic devices and organic field-effect transistors (OFETs). Optical properties of organic semiconducting materials are important for practical application. For example, the power conversion efficiency of organic photovoltaic devices is mainly affected by absorption properties of organic materials. Proton irradiation is one of the efficient methods to change the optical properties of organic materials. In this paper, we investigate the changes of optical properties of various polymers using the proton irradiation.

International Nuclear Information System (INIS)

Experimentally it is shown that a movable grounded metallic plate placed inside a multi-dipole magnetic cage can vary the diffused plasma parameters such as density, plasma potential and electron temperature. Plasma is solely produced in the source section of a double plasma device by a dc hot filament discharge and a low-density plasma is produced in the target section by local ionization of neutral gas by the high energetic electrons coming from the source section. A grounded movable stainless steel plate is inserted in the target section of the device. The floating potential of the plate also changes depending on the position of the plate inside the magnetic cage.

International Nuclear Information System (INIS)

The feasibility of a high-energy electron cooling device has been studied through tests on a prototype of the electron device. The apparatus consists of a pulsed ((20-60) keV, 2#mu#s) electron gun, a drift region 1 m long and of a depressed collector for recovering the electron energy. Tests on beam optics and energy recovery have been performed, a high-energy recovery efficiency has been attained. Experimental results are discussed in this paper.

International Nuclear Information System (INIS)

Two new identical insertion devices have been designed for the Daresbury SRS. They are 2T permanent-magnet multipole wigglers that will provide high flux in the X-ray region. This paper describes the magnetic and mechanical design of the arrays of steel pole pieces and permanent-magnet blocks. Also given is the engineering design of the support structure that will cope with the very large forces present while maintaining high levels of precision in gap setting and parallelism. The engineering design has been fully assessed using finite-element techniques to predict the deflections of critical parts of the structure. These two devices are due to be installed into the SRS by the end of 1998.

International Nuclear Information System (INIS)

A novel device called the gas expansion model (GEM) is being developed at the Hanford Engineering Development Laboratory for testing in the 400-MW(th) fast flux test facility (FFTF) reactor. Incorporation of the GEM into liquid-metal reactor designs is intended to measurably contribute to the achievement of inherent safety, by allowing the reactor to passively shut down even in the extremely remote (hypothetical) event of an unprotected (no scram) loss-of-flow accident. The purpose of this paper is to describe the GEM and present predictive analyses of the effectiveness of the device during unprotected loss-of-flow experiments in the FFTF.

UK PubMed Central (United Kingdom)

BackgroundThe routine removal of orthopaedic fixation devices after fracture healing remains an issue of debate. There are no evidence-based guidelines on this matter, and little...Full Text Available

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

Science.gov (United States)

It is well known that the growth of purple plague is tempera- ture dependent. in Figure 2 which shows the progressive growth of purple ...

Science.gov (United States)

... lasers, model switched optical memory elements ... Optical RS flip flop, Acousto-optic switches. ... FLOP CIRCUITS, OPTICAL SWITCHING, NOR GATES ...

Energy Technology Data Exchange (ETDEWEB)

Wave energy device teams have identified three varieties of air turbine as potentially applicable to wave energy devices. These are: conventional axial turbines; Wells, or self-rectifying, axial turbines and Francis turbines. This report examines the constructional requirements of these devices with regard to mechanical, environmental and manufacturing considerations. It is concluded that the major benefit of optimum material selection will be reduced manufacturing costs rather than enhanced turbine performance. A methodology of material selection has been established and candidate materials have been listed for the major components of each turbine type. Comparative costs for alternative materials are included, from which significant, potential economies have been identified. Recommendations are made aimed at achieving optimum material usage in the proposed turbines.

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

A compact and supersensitive device that can rapidly detect minute trace vapors from concealed explosives has been developed by scientists at Oak Ridge National Laboratory (ORNL). The new explosives sensor can detect and chemically identify organic nitrogen-oxygen compounds which are the building blocks of explosives such as TNT, plastiques, and nitroglycerine. The device could be used to scan persons entering airport terminals, nuclear power plants, defense installations, or other sensitive locations, providing greater security against potential terrorism. This device works on a glow discharge principle, and is more specifically called an ''Atmospheric Sampling Glow Discharge Ionization'' (ASGDI) source. The new detector is a highly automated, miniaturized version of research mass spectrometers widely used to trace constituents of chemical mixtures. Detail of this ...

Science.gov (United States)

Improved quantum-cascade lasers. (QCLs) are being developed as electri- ... These devices would supplant gas lasers as far-infrared sources. ...

Science.gov (United States)

... To maximise heat transfer rates, many heatshield designs make use of heat transfer augmentation devices such as large numbers of pin-fin ...

Energy Technology Data Exchange (ETDEWEB)

An assessment is made of the biological effects and physical hazards of static and time-varying fields associated with the NMR devices that are being used for clinical imaging and in vivo spectroscopy. A summary is given of the current state of knowledge concerning the mechanisms of interaction and the bioeffects of these fields. Additional topics that are discussed include: (1) physical effects on pacemakers and metallic implants such as aneurysm clips, (2) human health studies related to the effects of exposure to nonionizing electromagnetic radiation, and (3) extant guidelines for limiting exposure of patients and medical personnel to the fields produced by NMR devices. On the basis of information available at the present time, it is concluded that the fields associated with the current generation of NMR devices do not pose a significant health risk in themselves. However, rigorous guidelines must be followed to avoid ...

International Nuclear Information System (INIS)

This chapter consists of some points including an introduction, the basic parts of mass spectroscope device, sample introduction into the inductively coupled plasma, pneumatic nebuliser, ultrasonic nebuliser, dry gas cloud system, laser ablation unit, inductively coupled plasma-ion source, extraction of ions from ion source, mass analysis, quad-polar mass spectrometer, dual assembly mass spectrometer, mass spectrometer by calculation of time of flight, ion interferences and the ability of resolution, ion counter, working conditions of inductively coupled plasma mass spectroscope device, efficiency of ion transportation in an inductively coupled plasma mass spectroscope device and applications of analysis using mass spectroscope of induced plasma including nuclear, industrial, geological, environmental and archaeological applications, measurement of isotopes ratio and applications in tracing crimes.

International Nuclear Information System (INIS)

... brakes reactor charging machines reactors machine parts Int. Cl. B66d5/00;

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe ...

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on the surface of a ...

Energy Technology Data Exchange (ETDEWEB)

Research highlights: {yields} The polarization curve of 316L SS possesses five turning potentials in passive region. {yields} Films formed at turning potentials perform different electrochemical and semiconductor properties. {yields} Dissolutions and regenerations of passive film at turning potentials are obtained by AAS and XPS. {yields} Turning potentials appearing in passive region are ascribed to the changes of the compositions of the passive films. - Abstract: The passivity of 316L stainless steel in borate buffer solution has been investigated by Mott-Schottky, atomic absorption spectrometry (AAS) and X-ray photoelectron spectroscopy (XPS). The results indicate that the polarization curve in the passive region possesses several turning potentials (0 V{sub SCE}, 0.2 V{sub SCE}, 0.4 V{sub SCE}, 0.6 V{sub SCE} and 0.85 V{sub SCE}). The passive films formed at turning potentials perform different electrochemical and semiconductor properties. ...

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology for the neutron ...

International Nuclear Information System (INIS)

At room pressure and temperature the system EuOsub(1-x)Nsub(x) has two solid-solubility ranges, each with the NaCl structure: for 0 =< x =< 0.30 the system is ferromagnetic and semiconducting above the Curie temperature; for 0.92 =< x <1 it is metallic. Conductivity and Seebeck voltages indicate intrinsic behaviour above 310 K with an energy gap that decreases with increasing x for 0 =< x =< 0.30. Magnetic susceptibilities are consistent with 4f"6 configurations at x europium ions per molecule and a ferromagnetic Curie temperature Tsub(C) that increases with x. Low-temperature transport measurements were made only for 0.20 =< x =< 0.30: a minimum in the electrical conductivity, approximately 30 K above Tsub(C) correlates well with the onset of an anomalous low-temperature crystal contraction and with deviations from a Curie-Weiss law typical of short-range magnetic order. Below Tsub(C) there is a metal-to-semiconductor transition similar to ...

Energy Technology Data Exchange (ETDEWEB)

This report discusses the development of transition metal oxide semiconductors for photoelectrolysis of water. More specifically, it involves preparation of TiO/sub 2/ films by sputtering and evaluating their physicochemical characteristics primarily as they relate to the behaviour of the films as photoanodes. Impedance, photoelectrochemical, and photoconduction properties of TiO/sub 2/ films sputtered in pure O/sub 2/ onto heated substrates have been determined as a function of O/sub 2/ pressure during sputtering, film thickness, Pt overcoating, and cathodic treatment. The capacitance data before cathodic treatment are of the form expected. The capacitance is essentially independent of potential, while for potentials increasingly cathodic of this value, the capacitance increases very rapidly. Cathodic treatment alters the impedance characteristics of the films but leads to either no detectible change in their photoelectrochemical properties or to an increase in ...

International Nuclear Information System (INIS)

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American Institute of ...

Energy Technology Data Exchange (ETDEWEB)

Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the semiconductor industry to remove organic contaminants from wafer surfaces. This viscous solution is very difficult to rinse off water surfaces. Various rinsing conditions were tested and the resulting residual acid left on the water surface was measured. Particle growth resulting from incomplete rinse is correlated with the amount of sulfur on the wafer surface measured by Time of Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). The amount of sulfur on the wafer structure after the rinse step is strongly affected by the wafer film type and contact angle prior to the SPM clean.

International Nuclear Information System (INIS)

The response of a real time neutron dosemeter using a thin LiF target sandwiched between tow parallel surface barrier semiconductor detectors is studied for different neutron distributions and different angles of incidence. Calculations of the response function defined for a simultaneous detection by the two detectors of the particles emitted when the reaction "6Li(n,t)#alpha# occurs in the target are fulfilled by geometrical considerations of the reaction kinematics and the differential cross section variations. Finally, the efficiency of the studied detection systems is analyzed for dosimetric uses. (author).

International Nuclear Information System (INIS)

The fission fragments from spontaneous fission of 252Cf have been measured with the spectrometric and position-sensitive semiconductor pixel detector Medipix2. Fragments are identified by pattern recognition of clusters generated in the Medipix2 pixel matrix sensor upon heavy particle hit. From analysis of cluster area, the distribution of kinetic energy of fission fragments is obtained. Together with a novel USB readout interface, the Medipix2/USB system operates as active nuclear emulsion in single-quantum and on-line tracking mode.

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence analysis for nondestructive determination of Fe, Zn, Pb, and Br in air samples collected on nitrocellulose membrane filter Synpor 4 is described. A "2"3"8Pu source for the excitation and a semiconductor Si/Li detector for the detection of characteristic and L-fluorescent radiation of the above elements were used. A correction method based upon the measurements of simple or multiple Compton scattering for compensation of varying mass per unit area values in sample deposits was theoretically proposed and experimentally tested. The results obtained both with and without the correction were compared and good agreement with those given by atomic absorption spectrometry was observed. (author).

International Nuclear Information System (INIS)

The present work gives preliminary results of analysis of drug mixtures (NEPHROSAL tea bag) and its water infusion. In a sample of dried drugs the elements K, Ca, Mn, Fe, Ni, Cu, Zn, Br, Rb, Sr, Pb were identified, whereas in their water infusion only Ca, Mn, Zn and Sr were found. The method applied was radionuclide X-ray fluorescence analysis using a radionuclide source "1"0"9Cd, a Si/Li semiconductor detector and a multichannel analyzer Canberra 8100. (author) 6 refs.; 3 figs.