International Nuclear Information System (INIS)

The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, i.e., position of particles (e.g., atoms or molecules) and their interatomic potential(s), with continuum mechanics ...

Science.gov (United States)

... and Engineering (NISE), Instructional Materials Development in Nanoscale Science and Engineering ... & Physical Sciences, Division of Materials Research, 1065 N, telephone: (703) 292-4937, email: lhess ...

UK PubMed Central (United Kingdom)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

International Nuclear Information System (INIS)

(Dec 1973). United States Tausch, HJ Antinone, RJ Bailey, RA Air Force

Energy Technology Data Exchange (ETDEWEB)

We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

Science.gov (United States)

A dc-to-dc converter has been designed which employs the synchronizing phenomenon in the transistor core multivibrator. In the proposed circuit, the voltage feedback is applied from the control transistor and the current feedback is applied from the main transistor. The operation of the converter is analyzed by the averaging method of the state space technique. The converter features small switching loss and is suitable for high frequency operation. An efficiency of more than 95% is obtained for 5 V, 3 A output at a switching frequency of 200 kHz.

Energy Technology Data Exchange (ETDEWEB)

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 {mu}m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga{sup +} focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.

Science.gov (United States)

This dissertation presents the development of the novel mechanical testing technique of in situ nanoindentation in a transmission electron microscope (TEM). This technique makes it possible to simultaneously observe and quantify the mechanical behavior of nano-scale volumes of solids.

International Nuclear Information System (INIS)

A Process for yellow cake production from local Euxenite was developed in Bench Scale by using sulphuric acid digestion with simultaneously ion-exchange and solvent extraction purification steps. Uranium was then precipitated as uranium diuranate by ammonia solution. Equipment used in this process includes : digestion vessels, columnar ion-exchange, solvent extraction and precipitation units Ore feed to the process could be adjusted up to 2 kilogram per day (8 hours operation) with yellow cake product purity meet the requirement of Usaec standard of about 10-50 gram per day. Included in this experiment are the leaching characteristics of the ore, the design and construction of continuous columnar 4-cycle ion exchange unit, determination of the extraction and stripping stages of a gravity flow mixer-settler and the design and construction of continuous yellow cake precipitation unit with large grain size and high density product

International Nuclear Information System (INIS)

An original evaluating method of gain degradation has been found for neutron irradiated transistors. It establishes a correlation between degradation and the product of two coefficients: spectra factor and an electrical parameter which is measured or directly deduced from manufacturer's data. Equivalence for several type of spectra (fission, 14MeV and degradation sensitivity to electrical parameters values of individual components of a batch are obtained.

Energy Technology Data Exchange (ETDEWEB)

A simple and continuous model for the on-state current of polysilicon thin-film transistors, suitable for implementation in circuit simulators, is presented. The model includes the potential barrier at the grain boundaries, the channel length modulation and the excess current due to impact ionization. Comparison between measured output characteristics and the model shows excellent agreement over wide range of bias voltages and for devices with different gate lengths.

International Nuclear Information System (INIS)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide ...

British Library Electronic Table of Contents (United Kingdom)

Deposition of CN-based films by a novel version of active screen plasma nitriding, aiming at surface modification of polymers, is reported. The approach relies on the use of pure graphite as the grid material, which was found to act both as an active screen and as a dry source of carbon atoms for the synthesis of thin films consisting mainly of a stoichiometric CN layer with columnar-type structure and dome-like nanostructured morphology.

International Nuclear Information System (INIS)

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.

Energy Technology Data Exchange (ETDEWEB)

Various energy sources and motors of divers types can be used in electric cars with operating modes subjected to a number of particular constraints. As a result, the possible structures of the converters, that are analysed in detail, are about a dozen in number. Also considered is the use of solid-state components - thyristors, power transistors and new components.

International Nuclear Information System (INIS)

The theoretical hardness against total dose of the six-transistor SRAM cell is investigated in detail. An explicit analytical expression of the maximum tolerable threshold voltage shift is derived for two cross-coupled inverters. A numerical method is used to explore the hardness of the read and write operations. Both N- and P-channel access transistors designs are considered and their respective advantages are compared. The study points out that the radiation hardness mainly relies on the technology. Results obtained with the very robust Gate-All-Around process are finally presented.

Energy Technology Data Exchange (ETDEWEB)

AlGaInP epitaxial layers grown at 690 {degree}C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {l brace}111{r brace} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, forms the columnar ...

British Library Electronic Table of Contents (United Kingdom)

A series of new non-discoid chiral copper(ii)-salen type complexes, [Cu((4-CnH2n+1O)2salen)], n = 14, 16, 18 and salen = N,N'-cyclohexane bis (salicylideneiminato), containing 4-substituted alkoxy tails in the side aromatic rings and a cyclohexane spacer, have been prepared and their mesogenic properties investigated. The compounds were characterised by Fourier transform infra-red spectroscopy, 1H and 13C nuclear magnetic resonance spectroscopy, UV-vis spectroscopy and fast atom bombardment mass spectrometry. Mesomorphic properties of these compounds were studied by polarising optical microscopy, differential scanning calorimetry and X-ray diffraction (XRD). The ligands are non-mesogenic but the complexes exhibited enantiotropic rectangular columnar mesophases (Colr) with extended temperat...

Energy Technology Data Exchange (ETDEWEB)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped Thin Film ...

Energy Technology Data Exchange (ETDEWEB)

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ...

Energy Technology Data Exchange (ETDEWEB)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10{sup 17} to 3 x 10{sup 19} cm{sup -3}. (Author).

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

British Library Electronic Table of Contents (United Kingdom)

Microcrystalline-Si thin-film transistors (?C-Si TFTs) formed by using the source/drain contact electrode of self-aligned palladium silicide have been investigated. Both the self-aligned palladium silicided scheme and the previous top-gate staggered structure employ two-mask process steps for fabricating ?C-Si TFTs. However, the self-aligned palladium silicided scheme would cause better device characteristics than the top-gate staggered structure, primarily due to more carrier tunneling. For a gate length of 2 ?m, as compared to the top-gate staggered scheme, this silicided scheme can result in a 40% improvement of on-state current. In addition, as the gate length is reduced to 1 ?m, considerable short-channel effect is caused for both the device schemes.

British Library Electronic Table of Contents (United Kingdom)

We have developed a process for chemical purification of carbon nanotubes for solution-processable thin-film transistors (TFTs) having high mobility. Films of the purified carbon nanotubes fabricated by simple drop coating showed carrier mobilities as high as 164 cm2V?1s?1, normalized transconductances of 0.78 Sm?1, and on/off current ratios of 106. Such high performance requires the preparation of a suspension of micrometer-long and highly purified semiconducting single-walled carbon nanotubes (SWCNTs). Our purification process includes length and electronic-type selective trapping of SWCNTs using recycling gel filtration with a mixture of surfactants. The results provide an important milestone toward printed high-speed and large-area electronics with roll-to-roll and ink-jet device fabri...

British Library Electronic Table of Contents (United Kingdom)

This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77K to 400K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress.

International Nuclear Information System (INIS)

The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400degC to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600degC activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 #mu#m. (author).

Energy Technology Data Exchange (ETDEWEB)

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.

British Library Electronic Table of Contents (United Kingdom)

A type of Si3N4-based nanocomposites ceramic cutting tool material was prepared by the addition of nano-scale Si3N4W whisker and nano-scale TiN particle. Cutting performance of the Si3N4/Si3N4W/TiN nanocomposite ceramic tool in machining of cast iron was investigated in comparison with a commercial sialon ceramic tool, and the tool wear mechanism was studied. The two types of cutting tools have similar cutting performance at relatively low cutting parameters, while Si3N4/Si3N4W/TiN nanocomposite tool exhibits a better wear resistance than sialon tool at the relatively high cutting parameters. The wear of sialon ceramic cutting tool is dominated by the plastic deformation, abrasive action, microcracking, pullout of grains and chemical action at the higher cutting parameters. The higher mech...

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Water vapor is well known to be a critical component in many aspects of atmospheric research, such as radiative transfer and cloud and aerosol processes. This requires both improved measurements of the columnar water vapor and its profiles in the atmosphere in a wide range of conditions, and adjustment of water vapor parameterizations in radiation codes including the perfection of spectroscopic parameters. In this paper we will present the results of comparison of our calculations and downward solar fluxes measured with Rotating Shadowband Spectroradiometer under conditions of horizontally homogeneous clouds. We also will discuss the sensitivity of atmospheric radiation characteristics to variations of water vapor in the band 940 nm: these results may be useful for development of new methods of retrieval of the total column water vapor content (WVC) in the atmosphere from data of radiation observations.

International Nuclear Information System (INIS)

Microstructure and properties of a Mg AZ31B laser beam weld without filler are studied using electron microscopy, X-ray diffraction and mechanical tests. The microstructure of the weld is characterized by a narrow heat affected zone, columnar grains and precipitate coarsening in the fusion zone. Texture in the fusion zone is significantly different from the texture of the base material. The residual stress distribution observed is similar at the top and the bottom of the weld, maximum tensile residual stress values are observed in the fusion zone. Tensile tests reveal differences in the mechanical behavior of the fusion zone and the parent material, which can be related to the differences of texture and the resulting deformation mechanisms.

International Nuclear Information System (INIS)

A total dose hardening treatment is applied to SIMOX buried oxides. Total ionizing dose radiation testing is performed on fully-depleted transistors fabricated on both hardened and non-hardened substrates. At 200 krads x-ray dose, the front gate shift is reduced from -0.7 to -0.2 V for FETs built on the hardened wafers.

British Library Electronic Table of Contents (United Kingdom)

Executive summaryForewordPublic awareness of solid-state chemistry, or more broadly solid-state science and technology rapidly grew along with the transistor revolution and the development of the integrated circuit. We are now at the half-way point in the solid state century [Scientific American The Solid-State Century 1997;8(1) [special issue

International Nuclear Information System (INIS)

The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.

Energy Technology Data Exchange (ETDEWEB)

The Dynamic Transmission Electron Microscope (DTEM) is introduced as a novel tool for in situ processing of materials. Examples of various types of dynamic studies outline the advantages and differences of laser-based heating in the DTEM in comparison to conventional (resistive) heating in situ TEM methods. We demonstrate various unique capabilities of the drive laser, namely, in situ processing of nanoscale materials, rapid and high temperature phase transformations, and controlled thermal activation of materials. These experiments would otherwise be impossible without the use of the DTEM drive laser. Thus, the potential of the DTEM to as a new technique to process and characterize the growth of a myriad of micro and nanostructures is demonstrated.

International Nuclear Information System (INIS)

The effect of electron beam welding parameters on fusion zone (FZ) microstructure and porosity in a Ti-6.8 Al-3.42 Mo-1.9 Zr-0.21 Si alloy (Russian designation VT 9) has been investigated. It has been observed that the FZ grain width increased continuously with increase in heat input when the base metal was in the #beta# heat-treated condition, while in the #alpha# + #beta# heat-treated base metal welds, the FZ grain width increased only after a threshold energy input. The difference is attributed to both the weld thermal cycle and the pinning effect of equiaxed primary alpha on grain growth in the heat-affected zone (HAZ) of #alpha# + #beta# heat-treated base metal. Postweld heat treatment (PWHT) in the subtransus and supertransus regions did not alter the columnar grain morphology in the FZ, possibly due to the lack of enough driving force for the formation of new grains by the breaking up of the columnar grains and grain boundary movement ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe how this concept ...

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in order to ensure that our electrical ...

Energy Technology Data Exchange (ETDEWEB)

A non-synthetic polymer material, polyterpenol, was fabricated using a dry polymerization process namely RF plasma polymerization from an environmentally friendly monomer and its surface, optical and electrical properties investigated. Polyterpenol films were found to be transparent over the visible wavelength range, with a smooth surface with an average roughness of less than 0.4 nm and hardness of 0.4 GPa. The dielectric constant of 3.4 for polyterpenol was higher than that of the conventional polymer materials used in the organic electronic devices. The non-synthetic polymer material was then implemented as a surface modification of the gate insulator in field effect transistor (OFET) and the properties of the device were examined. In comparison to the similar device without the polymer insulating layer, the polyterpenol based OFET device showed significant improvements. The addition of the polyterpenol interlayer in the OFET shifted the threshold voltage ...

International Nuclear Information System (INIS)

III--V based devices such as field effect transistors, heterojunction bipolar transistors, and lasers often have surface leakage and thermal degradation problems due to surface states which pin the Fermi level to the midgap. Sulfur based passivation processes are known to improve device performance by altering surface-state densities. We have developed a voltage-controlled anodic sulfur passivation scheme using Na_2S dissolved in ethylene glycol. Our process has repeatedly produced a #approx#25% improvement in peak output power near the catastrophic damage limit in visible (#lambda#=670 nm) AlGaInP edge-emitting lasers. The threshold current density before and after passivation, and the I--V characteristics before and after catastrophic failure, were essentially unchanged indicating that passivation raises the threshold for facet damage.

International Nuclear Information System (INIS)

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated grains resulted in ...

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

Energy Technology Data Exchange (ETDEWEB)

The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2 [mu]m radiation hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 KHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. In this paper the effects of different device terminal DC biases and channel geometries on the noise are described.

Energy Technology Data Exchange (ETDEWEB)

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO{sub 2} thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm{sup 2}/(V s) that was initially 0.62 cm{sup 2}/(V s), when a buffer layer of thermally evaporated 100 nm SnO{sub 2} film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm{sup 2}/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 10{sup 5} to that of the unprotected devices ({approx}10{sup 4}) which was reduced from {approx}10{sup 6} before aging. Therefore, the enhanced long-term stability of ...

Energy Technology Data Exchange (ETDEWEB)

Million-atom molecular-dynamics (MD) simulations are performed to study the structure, mechanical properties, and dynamic fracture in nanophase Si{sub 3}N{sub 4}. The authors find that intercluster regions are highly disordered: 50% of Si atoms in intercluster regions are three-fold coordinated. Elastic moduli of nanophase Si{sub 3}N{sub 4} as a function of grain size and porosity are well described by a multiphase model for heterogeneous materials. The study of fracture in the nanophase Si{sub 3}N{sub 4} reveals that the system can sustain an order-of-magnitude larger external load than crystalline Si{sub 3}N{sub 4}. This is due to branching and pinning of the crack front by nanoscale microstructures.

British Library Electronic Table of Contents (United Kingdom)

Here, a general approach for the preparation of reduced graphite oxide (rGO)-silver nanocomposite has been investigated. Graphite oxide (GO) sheets are used as the nanoscale substrates for the formation of rGO-silver composite. GO sheets and Ag ions can be reduced at the same time, under a mild condition using l-ascorbic acid (l-AA) as reducing agent. This simple approach should find practical applications in the production of rGO-silver nanocomposite. The SEM analysis indicates that the silver particles are dispersed on graphene sheets. Raman signals of rGO in the composite are increased by the attached silver nanoparticles, displaying surface-enhanced Raman scattering activity. The degree of enhancement can be adjusted by varying the quantity of silver nanoparticles in the composite. In ...

British Library Electronic Table of Contents (United Kingdom)

Thin films of Ni and Ni alloy have been widely used in microelectromechanical systems (MEMS) and magnetic storage systems. As the dimensions of components in these systems decrease to the micro-scale, even the nano-scale, the interfacial phenomena significantly differ to the counterparts on the macro-scale. A better understanding of micro-/nano-tribology will benefit the fabrication of the small components. In this manuscript parallel molecular dynamics (MD) simulations have been conducted to investigate the nanoscratch behavior of nickel. The simulations are performed for two cases with different indenter shapes. Case I has a sharp indenter, while the indenter in Case II is blunt. It has been found that the indenter shape significantly influences the nanoscratch deformation. The sharp ind...

International Nuclear Information System (INIS)

Nanoscale islands of Cu_2O have been synthesized on single-crystal SrTiO_3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (MBE). Island growth location has been controlled by using an ex situ Ga"+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex situ atomic force microscopy study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

International Nuclear Information System (INIS)

The methods of superconducting device fabrication by lithography and multilevel processing usually require a number of processing steps with lithographic resolution and alignment adequate for the scale of the device be fabricated. As an alternative, the focused ion beam (FIB) microscope is increasingly being used directly to fabricate devices. A major advantage of using a FIB compared to other lithography methods is its flexibility and high resolution. It allows in-situ, milling (#propor to#5 nm at a beam current of 1 pA) to a variety of depths, and imaging (2 nm) of the sample. In this paper we describe our development of junction fabrication techniques using the FIB and their application in creating a range of potential sensor devices and quantum electronics applications. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Environmental Research Database

Objectives1. We will use reduction of lysosomal stability as an indicator of cell injury induced by C-60 fullerenes and carbon nanotubes in the liver analogue or digestive gland (hepatopancreas) of marine mussels. Molluscan hepatopancreatic digestive cells are key to normal function and are a sensitive key interface with the environment. Reduction of lysosomal stability is mechanistically linked with impaired health of the whole animal. 2. We will also test the hepatopancreatic digestive cells for evide [continued...]DescriptionNanotechnology is a major innovative scientific and economic growth area, which may present a variety of hazards for environmental and human health. The surface properties and very small size of nanoparticles and nanotubes provides surfaces that may bind and transport toxic chemical pollutants, as well as possibly being toxic in their own right by generating reactive oxygen species (ROS). There is a wealth of evidence for the harmful effects of ...

International Nuclear Information System (INIS)

Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.

Energy Technology Data Exchange (ETDEWEB)

Following comprehensive research nanomaterials or products which were either still in a re-search/development status or are already available in the marketplace were identified for the water and air sectors. Based on life cycle assessments for two case studies, it was checked how the potential benefits and impacts on the environment for nanotechnology products or processes compare with those for conventional solutions. The first case study deals with the solar treatment of water contami-nated with tetrachloroethylene, comparing nanoscale titanium dioxide (photo-catalysis) and a photo-Fenton process. The second case study on air filtration compares a passenger car cabin-air filter with nanofibres and a conventional filter. (orig.)

British Library Electronic Table of Contents (United Kingdom)

A ferritic steel with finely dispersed precipitates was investigated to reveal the fundamental strengthening mechanisms. The steel has a yield strength of 760MPa, approximately three times higher than that of conventional Ti-bearing high strength hot-rolled sheet steels, and its ultimate tensile strength reaches 850MPa with an elongation-to-failure value of 18%. Using energy dispersive X-ray spectroscopy (EDXS) and transmission electron microscope (TEM), fine carbides TiC with an average diameter of 10nm were observed in the ferrite matrix of the 0.08%Ti steel, and some cubic M23C6 precipitates were also observed at the grain boundaries and the interior of the grains. The finely dispersed TiC precipitates in the matrix provide matrix strengthening. The estimated magnitude of precipitation ...

Energy Technology Data Exchange (ETDEWEB)

Perylene bisimides (PBIs) represent an important class of organic n-type semiconductors exhibiting a relatively high electron affinity among large-band-gap materials. Herein synthesis and characterization of several unsymmetrical N-substituted PBI dyes is presented and the thermotropic behavior, which is strongly affected by the respective N-substituents was investigated. Two different series of highly soluble and fluorescent derivatives have been synthesized: (1) PBIs bearing swallow-tailed alkyl chains, different in size or (2) one swallow-tailed alkyl chain and one branched oligoethylenglycolether. Synthesis of these PBIs is generally feasible by two distinct divergent synthesis approaches. Thermotropic behavior was studied by DSC, POM and XRD measurements. Inherent {pi}-{pi} interactions between cofacially orientated perylene molecules and the elliptic shape of the molecule favor the ordering in columns and self-organized architectures. Among them hexagonal ...

Energy Technology Data Exchange (ETDEWEB)

A Fe-20at.%Cr-10%Al matrix was dispersed with a wide range of different oxides in order to study the effect of oxygen-active dopants on the high-temperature growth and adhesion of {alpha}-Al{sub 2}O{sub 3} scales. Effect of these various cation dopants on the alumina scale microstructure was correlated with dopant ion segregation to the {alpha}-Al{sub 2}O{sub 3} grain boundaries using analytical electron microscopy. Elements such as Mn and V showed little effect on the oxide scale and were not observed to segregate. Elements such as Y and Gd resulted in finer, more columnar {alpha}-Al{sub 2}O{sub 3} grains and were segregated to scale grain boundaries. However, Ti, Ta, Ca, and Nb also were found to segregate but had a lesser effect on scale morphology. This indicates that cation segregation to scale grain boundaries is not a sufficient condition to achieve beneficial oxidation effects. The driving force for segregation in growing alumina scales is discussed.

Energy Technology Data Exchange (ETDEWEB)

AZ31 and experimental ZMA611 alloys were strip cast into 2 mm thick strips. The as-cast AZ31 alloy strip consists of columnar dendrites. On the other hand, as-cast ZMA611 alloy strip shows equiaxed dendritic structure through the thickness of strip. These alloys were subjected to various thermomechanical treatments and their tensile properties were evaluated. Strip cast AZ31 alloy in H24 condition has equivalent yield and tensile strengths with similar ductility compared to commercial ingot cast AZ31-H24 alloy, indicating that strip casting is a viable process for the fabrication of Mg alloy strips. The ZMA611 alloy has a large volume fraction of fine dispersoid particles in the microstructure, resulting from the beneficial effect of strip casting on microstructural refinement. It has been shown that the ZMA611 alloy has superior tensile properties compared to commercial ingot cast AZ31-H24 alloy, suggesting the possibility of the development of new wrought Mg ...

Energy Technology Data Exchange (ETDEWEB)

Research at the interface between biomolecules and inorganic nanocrystals has resulted in a great number of new discoveries. In part this arises from the synergistic duality of the system: biomolecules may act as self-assembly agents for organizing inorganic nanocrystals into functional materials; alternatively, nanocrystals may act as microscopic or spectroscopic labels for elucidating the behavior of complex biomolecular systems. However, success in either of these functions relies heavily uponthe ability to control the conjugation and assembly processes.In the work presented here, we first design a branched DNA scaffold which allows hybridization of DNA-nanocrystal monoconjugates to form discrete assemblies. Importantly, the asymmetry of the branched scaffold allows the formation of asymmetric2assemblies of nanocrystals. In the context of a self-assembled device, this can be considered a step toward the ability to engineer functionally distinct inputs and outputs.Next we develop an ...

International Nuclear Information System (INIS)

The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological radiation hardening and no more system hardening.

Energy Technology Data Exchange (ETDEWEB)

An all solid-state kicker pulser for a proton radiography system has been designed. Multiple solid-state modulators stacked in an inductive-adder configuration are utilized in this kicker pulser design. Each modulator is comprised of multiple metal-oxide-semiconductor field-effect transistors (MOSFETs) which quickly switch the energy storage capacitors across a magnetic induction core. Metglas is used as the core material to minimize loss. Voltage from each modulator is inductively added by a voltage summing stalk. A circuit model of a prototype inductive adder kicker pulser modulator has been developed to predict the performance of the pulser modulator. The modeling results are compared with experimental data.

Energy Technology Data Exchange (ETDEWEB)

Polysilicon thin-film technology has become of great interest due to the demand for large area electronic devices. Active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting displays (AMOLEDs) are among the fields where polysilicon thin-film transistors (poly-Si TFTs) are most commonly used. Such devices, generally, require analog signal processing. This fact makes the performance of basic analog blocks, such as current mirrors implemented with poly-Si TFTs, crucial. This paper examines the performance of various current mirror designs through simulation. Finally, a novel design of a current mirror is proposed aimed to be used in low voltage applications.

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Nanoimprinting is a fast-growing technique for nanoscale patterning. One of the remaining issues in nanoimprinting is the removal of the residual layer after nanoimprinting. Traditionally the residual layer is removed by an oxygen reactive-ion etching (RIE) step. The need for a vacuum environment and dedicated equipment in this step lowers the throughput and increases the cost of the nanoimprinting process. It also prevents the possibility of patterning isolated functional polymers because oxygen RIE destroys the functional materials. In this work, novel nanoimprinting schemes are developed to nondestructively remove the residual layer in thermal nanoimprinting by solvent developing and dewetting. Combined with a transfer-bonding technique, three-dimensional polymer scaffolds are achieved. The techniques developed here eliminate the RIE step in thermal nanoimprinting and are compatible with roller nanoimprinting for large-scale patterning of polymer micro- or ...

Science.gov (United States)

We have investigated the nanotexture and crystallographic orientation of aragonite in a coral skeleton using synchrotron-based scanning transmission X-ray microscopy (STXM) and transmission electron microscopy (TEM). Polarization-dependent STXM imaging at 40-nm spatial resolution was used to obtain an orientation map of the c-axis of aragonite on a focused ion beam milled ultrathin section of a Porites coral. This imaging showed that one of the basic units of coral skeletons, referred to as the center of calcification (COC), consists of a cluster of 100-nm aragonite globules crystallographically aligned over several micrometers with a fan-like distribution and with the properties of single crystals at the mesoscale. The remainder of the skeleton consists of aragonite single-crystal fibers in crystallographic continuity with the nanoglobules comprising the COC. Our observation provides information on the nm-scale processes that led to biomineral formation in this sample. Importantly, ...

Energy Technology Data Exchange (ETDEWEB)

Abstract: We report for the selective-area chemical synthesis of semiconductor single-crystal organic nanowires of silver-tetracyanoquinodimethane (Ag-TCNQ). Straight and smooth Ag-TCNQ nanowires can be produced and patterned on micrometer and nanometer scale on silicon substrates covered with a thin layer of Ag film through the reaction of TCNQ and Ag in a simple gas-solid chemical reaction process. Ag-TCNQ nanowires are characterized by UV-vis, IR and Raman spectroscopy, respectively. The Ag-TCNQ nanowires grows preferentially along the [100] direction of strong - stacking of Ag-TCNQ molecules. Nanodevices based on these nanowires are fabricated using focus ion beam (FIB) technique. Electrical properties are characterized and I-V hysteresis is observed, which shows memory effect with electrical switching of three orders on-off ratio. These nanowires could be potential for use in optical storage, ultrahigh-density nanoscale memory and logic devices.

International Nuclear Information System (INIS)

The authors observed an extremely high permittivity (#approx#35 000 at T_C) in barium zirconate titanate (BaZr_0_._1Ti_0_._9O_3) ceramics with holmium substitution (1-5 mol %) in Ba site. Careful microstructural investigation and energy dispersive spectroscopy analysis of the 1-2 mol % of Ho substituted ceramics showed the enrichment of a Ho-phase along the grain boundaries with a composition close to the Ho_2Ti_2O_7 pyrochlore. The formation of Ho rich phase resulted in the Maxwell-Wagner polarization mechanism, which leads to this unusually high permittivity. Ceramics with 3 mol % or higher Ho content showed lesser permittivity values compared to 1-2 mol %, probably due to the increase in pyrochlore phase. These high dielectric constant ceramics are useful in nanoscale devices.

Environmental Research Database

ObjectivesThe overall aim of this work is to use an in-situ FTIR probe to investigate selected heterogeneous catalysts in industrially relevant organic reactions. This approach will be broadly applicable to the UK fine chemical manufacturing base.~%~~%~The project has the following specific objectives:~%~~%~- To demonstrate and develop the use of an in-situ FTIR probe in a batch reactor at elevated temperatures (eg greater than 100 deg C) to monitor reactant usage and product formation.~%~~%~- To validat [continued...]DescriptionThis proposal concerns the in-situ study of catalytic processes and reaction kinetics. The catalysts concerned are microporous materials, such as, zeolites, containing pores and cavities of molecular dimensions. These catalysts constitute crystal reactors on a nanometer scale that are selective on a size and shape basis for organic molecules used in this proposal.~%~~%~Under this current ...

International Nuclear Information System (INIS)

Research highlights: #-># Morphological and chemical characterization at atomic scale of porous alumina layers anodised in ordered regimes. #-># Characterization based on the use of FEG-SEM, STEM-HAADF, STEM-EELS and STEM-X-EDS. #-># Nanoscale distribution of P-, C- and S-bearing species in the pore wall. - Abstract: Ordered porous alumina layers prepared by two-step anodising in phosphoric, oxalic and sulphuric acids have been characterized at sub-nanometer scale using electron microscopy techniques. FEG-SEM and STEM-HAADF images allowed estimating the pore size, cell wall and pore wall thicknesses of the layers. Nanoanalytical characterization has been performed by STEM-EELS and STEM-X-EDS. Detailed features of the spatial distribution of anions in the pore wall of the films have been obtained. Maximum concentration of P-species occurs, approximately, at the middle of the pore wall; adjacent to the pore for C-species, whereas the distribution of ...

International Nuclear Information System (INIS)

Small-angle X-ray scattering method recognised to be very useful in the studies of structural problems of materials in homogeneous in nanoscale. Studies by small-angle X-ray scattering on the Al-Ag alloys are presented. The size distributions of spherical Guinier-Person zones were calculated using Vonk's and Glatter's methods. Small-angle X-ray scattering studies were performed on Al-5.0 at.%Ag alloy containing Guinier-Preson zones in the #eta#-state. For this alloy one can assume that scattering particles are of spherical shape, have uniform electron density and scatter independently. Moreover, the size distributions were calculated for Al-1.6 at.%Ag alloy containing Guinier-Preston zones in #epsilon#-state (scattering particles with not uniform electron density). Both, Vonk's and Glatter's, methods gave similar size distributions. Profiles of size distributions for Guinier-Preston zones in #epsilon#-state are more complex in comparison to Guinier-Preston zones in ...

Energy Technology Data Exchange (ETDEWEB)

Neutron diffraction was used to monitor elastic strains during in situ tension testing of a directionally solidified (DS) superalloy at 900 deg. C. Changes in misfit and thermal expansion coefficients of individual phases were obtained. In the {gamma} phase, it is demonstrated that elastic strains saturate at 350 MPa, which is well below the yield strength of the alloy. This is interpreted as the onset of dislocation glide through less stressed vertical channels. The critical resolved shear stress (CRSS) of {gamma} is found to be 143 {+-} 11 MPa, in agreement with a calculated CRSS that is dominated by Orowan bowing of dislocations through nanoscale-wide {gamma} channels. This provides confirmation of Orowan bowing in plasticity/creep of the {gamma} phase. Implications of CRSS and misfit in a 'threshold stress' for creep and rafting are discussed. The CRSS of {gamma}' is found to be consistent with pairwise penetration of dislocations ...

International Nuclear Information System (INIS)

We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO_2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-#mu#m device characteristics, such as V_t_h and I_d_s_a_t, for which the differences between simulation and experiment less than 5 %.

Science.gov (United States)

High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light emitting diodes, field-effect transistors, and heterojunction bipolar ...

International Nuclear Information System (INIS)

We investigate the efficacy of mitigating radiation-based single event effects (SEE) within circuits incorporating SiGe heterojunction bipolar transistors (HBTs) built with an N-Ring, a transistor-level layout-based radiation hardened by design (RHBD) technique. Previous work of single-device ion-beam induced charge collection (IBICC) studies has demonstrated significant reductions in peak collector charge collection and sensitive area for charge collection; however, few circuit studies using this technique have been performed. Transient studies performed with Sandia National Laboratory's (SNL) 36 MeV 16O microbeam on voltage references built with N-Ring SiGe HBTs have shown mixed results, with reductions in the number of large voltage disruptions in addition to new sensitive areas of low-level output voltage disturbances. Similar discrepancies between device-level IBICC results and circuit measurements are found for the case of digital shift ...

Energy Technology Data Exchange (ETDEWEB)

Research highlights: {yields} The use of resonant photoemission in its 'core-hole clock' expression for the study of the dynamical charge transfer across hybrid organic-inorganic interfaces and for the intermolecular charge transfer in the bulk of organic thin films is reviewed. {yields} The electronic coupling to the substrate and the efficiency of charge transport across hybrid interfaces is different for individual electronic subsystems of the molecular adsorbate. {yields} The intermolecular charge transfer in the bulk of discotic liquid crystals occurs on the order of a few femtoseconds and is faster than expected from the macroscopic charge transport characteristics of the material. -- Abstract: The focus of this brief review is the use of resonant photoemission in its 'core-hole clock' expression for the study of two important problems relevant for the field of organic electronics: the dynamical charge transfer across hybrid organic-inorganic ...

Science.gov (United States)

This paper summarizes results of preliminary experiments to develop cytological and biochemical indicators for estimating damage to respiratory cells in test animals exposed by inhalation to toxic agents associated with nonnuclear energy production, the specific goal being the application of advanced multiparameter flow-systems technologies to the detection of early atypical cellular changes in lung epithelium. Normal Syrian hamster lung cell samples composed of histiocytes, leukocytes, macrophages, ciliated columnar cells, and epithelial cells were stained with fluorescent dyes specific for different biochemical parameters and were analyzed in liquid suspension as they flowed through a chamber intersecting a laser beam of exciting light. Multiple sensors measured the total or two-color fluorescence and light scatter on a cell-by-cell basis. Cellular parameters proportional to optical measurements (i.e., cell size, DNA content, total protein, nonspecific esterase ...

Energy Technology Data Exchange (ETDEWEB)

A study of mine-waste contamination effects on Methow River habitat on the eastern slopes of the north Cascade Mountains in Washington state, U.S.A., revealed impacts at ecosystem, community, population, individual, tissue, and cellular levels. Ore deposits in the area were mined for gold, silver, copper and zinc until the early 1950's, but the mines are now inactive. An above-and-below-mine approach was used to compare potentially impacted to control sites. The concentrations of eleven trace elements (i.e., Al, As, B, Ba, Cd, Cr, Cu, Mn, Pb, Se, and Zn) in Methow River sediments downstream from the abandoned mine sites were higher than background levels. Exposed trout and caddisfly larvae in the Methow River showed reduced growth compared to controls. Samples of liver from juvenile trout and small intestine from exposed caddisfly larvae were examined for evidence of metal accumulation, cytopathological change, and chemical toxicity. Morphological changes that are ...

International Nuclear Information System (INIS)

For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are compared and characterized, using a high resolution SEM and a x-ray diffractometer, respectively. The fabrication process and the ...

Energy Technology Data Exchange (ETDEWEB)

Beside traditional applications of refractory metals, e.g. in high temperature furnace construction, lighting or glass industry, one of the most important molybdenum products nowadays are large plates which are frequently used as targets for the sputtering of molybdenum layers in thin-film transistor liquid crystal displays. For the hot rolling of the sintered pre-material, the control over the recovery and recrystallization behavior is of particular importance. Molybdenum tends to a very recovery controlled behavior during hot deformation, at which the dislocations arrange into subcell boundaries instantaneously. These pronounced recovery processes seem to consume a large amount of the stored deformation energy for the actual recrystallization. On the other hand, recovery provides the future recrystallization nuclei. For a comprehensive characterization of these microstructural processes, electron microscopy appears to be the most proper means. The aim of this ...

Energy Technology Data Exchange (ETDEWEB)

In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We simulate the time evolution of layer relaxation as a function of ...

Energy Technology Data Exchange (ETDEWEB)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

International Nuclear Information System (INIS)

Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained-Si (s-Si) p-MOSFETs (metal-oxide-semiconductor field-effect transistors) along (110) and (100) channel directions. In bulk Si, a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field. The combination of (100) direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the (110) direction, opposite to the situation in bulk Si. But the combinational strain experiences a gain loss at high field, which means that uniaxial compressive strain may still be a better choice. The mobility enhancement of SiGe-induced strained p-MOSFETs along the (110) direction under additive uniaxial tension is explained by the competition between biaxial and shear stress.

International Nuclear Information System (INIS)

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si films are the main factors that cause enhanced breakdown of SiO_2 films.

Energy Technology Data Exchange (ETDEWEB)

In this paper, we define, design and test a radiation tolerant autonomous monitoring tool for nuclear embedded applications. The goal of the instrumentation system was to record the values of some parameters such as dose, temperature or vibrations appearing inside the containment building of nuclear power plants. The knowledge of these parameters will be a good help for predictive maintenance of the power plant components. For the design of the monitoring tool, we rely on commercial-off-the-shelf (COTS) low power electronic components to use battery-supplied power. A large amount of components starting from discrete transistors or logic units to memories and micro-controllers was associated to define and design a prototype. We then confirm the environment conditions tolerance estimated to up to 2 kGy of total dose and 80 C for temperature by on-line irradiation experiments for individual components and functions and prototypes. Two different sets of about 60 ...

Energy Technology Data Exchange (ETDEWEB)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of capacitance-voltage characteristics demonstrated that ...

Science.gov (United States)

Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1-xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high quality low-leakage Schottky contacts for low noise applications and for recessed gate high electron mobility transistors. In this work, the effect of postetch chemical treatment of the n-type Al0.22Ga0.78N surface on the performance of the Ni/Au based Schottky contact has been investigated. Three different types of chemical treatment: viz, reactive ion etching, reactive ion etching plus dipping in hot aqua regia, and reactive ion etching plus dipping in hot KOH, are studied. Detailed current-voltage studies of three different surface treated diodes and a comparison with as-deposited diodes reveal significant improvement in the diode characteristics. The latter surface ...

International Nuclear Information System (INIS)

The fundamental optical absorption of ion crystals characterizes the creation of different free low energetic electronic excitation (the excitons and electron-hole pairs), but their straight registration is not possible because of incommensurable big absorption factor of alkali halide monocrystals. So to registration the spectrums of alkali halide monocrystal very fine layers are necessary. We have received fine films of Nal and KCl in system of KCl-Nal-KCl, KCl-KI-KCl on the base of universal vacuum post VUP-4, VUP-5 by thermal evaporation. A unique spectral unit has been created For this on the basic the SDL-2 complex. Complex consists of radiator, systems of condensers, monochromators MDR-12 and MDR-23, receivers of radiation, controller by unit. Connect and control of monochromators by means of IBM-compatible computer has been created. Kinematics schemes of monochromators provide consequent removing on output slot of monochromatic radiation in operating range of each diffraction ...

International Nuclear Information System (INIS)

Full text: It was recently-established for hexagonal barium ferrite-industrially important magnetically hard material that refinement of the crystallite dimensions into the nanoscale regime, typically #<=# 10 nm, leads after heat treatment at temperatures 800-1000 deg C to significant coercivity increase of up to 6.5 kOe (#approx#3-4 times) with saturation magnetisation values of 50-55 emu/g (#approx#95% of bulk at room temperature). High-energy mechanochemical processing has been applied to prepare nanostructural (nanocrystalline-amorphous) composites. High resolution electron microscopy studies reveal that the enhancement of the final magnetic properties was due to formation of magnetically noninteracting #approx#l,#mu#m Ba-ferrite particles with 5-10 nm amorphous surface layer - depending on annealing parameters. Similar situation was established also for ball milled strontium ferrite (SrFe_1_2O_1_9) powders where short annealing 4 h at 1000 deg C produced ...

Energy Technology Data Exchange (ETDEWEB)

Individual nanoscale building blocks exhibit a wide range of size-dependent properties, since their size can be tuned over known characteristic length scales of bulk materials. In the last several years, the possibility of combining different materials in the form of two and three component nanoparticles (NPs) has been extensively explored. Also multi-component materials can be obtained via self-assembly of NPs from their binary colloidal mixtures. These new nanocrystal solids may possess tunable collective properties that originate from interactions between size and composition controlled building blocks. Exchange coupling between neighboring NPs of magnetically soft and hard materials enhances the magnetic energy product of the nanocomposite material. Randomly mixed solids of small and large semiconducting CdSe NPs revealed enhancement of photoluminescence intensity of large semiconductor particles accompanied by quenching of photoluminescence of the small ...

International Nuclear Information System (INIS)

We have investigated the nanocrystalline microstructure and the hard magnetic properties of Sm(Co_0_._7_2_5Fe_0_._1Cu_0_._1_2Zr_0_._0_4B_0_._0_1_5)_7_._4 melt-spun ribbons. The coercivity (H_c) of the as-spun ribbons increased with the wheel surface speed from 2.8kOe for 10m/s to 14.5kOe for 40m/s. The post-annealing of the melt-spun ribbons from 700 to 900 deg. C for 10min did not lead to a substantial increase of H_c. However, after isothermal aging at 820 deg. C and subsequent slow cooling (0.5 deg. C/min) to 120 deg. C, H_c increased from 2.8 to 10.9kOe for 10m/s, while it decreased from 14.5 to 13.5kOe for 40m/s ribbons. The grain size of the melt-spun ribbon reduced with structural transformation from 2:17H (Th_2Ni_1_7-hexagonal type) to 1:7H (TbCu_7-hexagonal type) as the wheel surface speed was increased. Three-dimensional atom probe analysis showed a boron enriched precipitate at the grain boundaries in the as-spun ribbons, which acts as the grain growth inhibitor causing the ...

International Nuclear Information System (INIS)

We review the current status of Andreev reflection spectroscopy on the heavy fermions, mostly focusing on the case of CeCoIn5, a heavy-fermion superconductor with a critical temperature of 2.3 K. This is a well-established technique to investigate superconducting order parameters via measurements of the differential conductance from nanoscale metallic junctions. Andreev reflection is clearly observed in CeCoIn5 as in other heavy-fermion superconductors. Considering the large mismatch in Fermi velocities, this observation seemingly appears to disagree with the Blonder-Tinkham-Klapwijk (BTK) theory. The measured Andreev signal is highly reduced to the order of maximum ?13% compared to the theoretically predicted value (100%). The background conductance exhibits a systematic evolution in its asymmetry over a wide temperature range from above the heavy-fermion coherence temperature down to well below the superconducting transition temperature. Analysis of the ...

Energy Technology Data Exchange (ETDEWEB)

Subsurface and surface coalfires are a serious problem in many coal-producing countries. Combustion can occur within the coal seams (underground or surface), in piles of stored coal, or in spoil dumps at the surface. While consuming a non renewable energy source, coalfires promote several environmental problems. Among all GHGs that are emitted from coalfires, CO2 is the most significant because of its high quantity. In connection to this environmental problem, the core aim of the present research is to develop a hyperspectral remote sensing and radiative transfer based model that is able to estimate CO2 concentration (ppmv) from coalfires. Since 1960s remote sensing is being used as a tool to detect and monitoring coalfires. With time, remote sensing has proven a reliable tool to identify and monitor coalfires. In the present study multi-temporal, multi-sensor and multi-spectral thermal remote sensing data are being used to detect and monitor coalfires. Unlike the earlier studies, the ...

International Nuclear Information System (INIS)

In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO_2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were ...

International Nuclear Information System (INIS)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for high-speed application requires the scaling down ...

ScienceCinema

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