Fabrication of 10nm diameter carbon nanopores
Energy Technology Data Exchange (ETDEWEB)
The addition of carbon to samples, during imaging, presents a barrier to accurate TEM analysis, the controlled deposition of hydrocarbons by a focused electron beam can be a useful technique for local nanometer-scale sculpting of material. Here we use hydrocarbon deposition to form nanopores from larger focused ion beam (FIB) holes in silicon nitride membranes. Using this method, we close 100-200nm diameter holes to diameters of 10nm and below, with deposition rates of 0.6nm per minute. I-V characteristics of electrolytic flow through these nanopores agree quantitatively with a one dimensional model at all examined salt concentrations.
2008-09-25
Fouling Study of Silicon Oxide Pores Exposed to Tap Water
Energy Technology Data Exchange (ETDEWEB)
We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.
2007-07-12
A Two-Step Etching Method to Fabricate Nanopores in Silicon
A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.
2008-01-01
Infrared spectroscopy analysis of MgO-doped silicon nitride
Energy Technology Data Exchange (ETDEWEB)
Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.
1997-12-31
Effect of mineralizer on the nitridation of sialon-bonded silicon carbide products
International Nuclear Information System (INIS)
The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society
International Nuclear Information System (INIS)
By the methods of the angular distribution of photon annihilation, time distribution of photon annihilation, photoluminescence spectroscopy, Fourier IR-spectroscopy, atomic force microscopy the detail information on relation of the structural and physical properties of the porous nano-structures is obtained. Study of pores sizes in a different nano-porous materials, such as the porous silicon, porous anode aluminium oxide, porous solids exposed to light atoms ion implantation (hydrogen, deuterium, helium) is carried out.
2003-09-15
"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."
2007-02-01
Investigation of #alpha#-sialon formation by high temperature X-ray diffraction
International Nuclear Information System (INIS)
A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of ...
1993-10-04
Performance of ceramics in ring/cylinder applications
Energy Technology Data Exchange (ETDEWEB)
In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.
1987-01-01
International Nuclear Information System (INIS)
#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).
British Library Electronic Table of Contents (United Kingdom)
Rapid nitridation was used to fabricate reaction-bonded and postsintered -Si6-ZAlZOZN8-Z (Z=1) ceramics with monoclinic ZrO2 added to the starting powder. Thermo-gravimetric analysis revealed that the addition of ZrO2 reduced the starting temperature of the main nitridation reaction. Using a reaction-bonding route with heating rates of 5, 10, and 20C/min, to fabricate -SiAlON ceramics without ZrO2 resulted in unreacted silicon that bled out of the specimens and the Z=1 composition samples did not maintain the original green compact morphology. On the other hand, no such bleeding of melted silicon was observed for samples with ZrO2 additions and the samples following nitridation maintained the original green morphology. The microstructure and mechanical properties of samples produced by rap...
2011-01-01
Sintered Reaction Bonded Silicon Parts by Microwave Nitridation Combined with Gas-Pressure Sintering
Energy Technology Data Exchange (ETDEWEB)
The cooperative project was a joint development program between Ceradyne and Oak Ridge National Laboratory through Lockheed Martin Energy Research (LMER). Cooperative work was of benefit to both parties. ORNL was able to assess the effect of the microwave nitridation process coupled with gas-pressure sintering for fabrication of parts for advanced diesel engines. Ceradyne gained access to gelcasting expertise and microwave facilities and experience for the nitridation of SRBSN materials. The broad objective of the CRADA between Ceradyne and OIWL was to (1) examine the applicability of the gelcasting technology to fabricate parts from SRBSN, and (2) to assess the effect of the microwave nitridation of silicon process coupled with gas-pressure sintering for fabrication of parts for advanced diesel engines. The following conclusions can be made from the work performed under the CRADA: (1) Gelcasting is a ...
1999-01-01
International Nuclear Information System (INIS)
In this letter a method to estimate the visco-elastic response of monolithic ceramics to cyclic loading conditions at high temperatures is proposed. A relation is observed between the visco-elastic energy dissipation measured for two silicon nitride materials, and the structural characteristics of their respective intergranular phases. Some consequences for the fatigue resistance of the tested materials, and of non-transforming monolithic ceramics in general, are discussed. Two batches (G for glassy and C for crystalline) of SiAlON have been studied. The G-batch is obtained by pressureless sintering of silicon nitride powder with Y_2O_3 (6 wt%) and 6AlN-SiO_2 (5 wt%) as sintering additives. The main phase after sintering is #beta#-sialon. Upon cooling from the sintering temperature the amorphous intergranular residues of the sintering additives and of SiO_2, which is unavoidably present as a thin layer ...
Energy Technology Data Exchange (ETDEWEB)
Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized ...
2003-07-01
International Nuclear Information System (INIS)
This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials on ...
Preparation and pattern recognition of O'-sialon by reduction-nitridation from coal gangue
International Nuclear Information System (INIS)
The phase composition and microstructure of O'-sialon prepared from Chinese coal gangue have been studied. The use of Si powder is more effective than that of activated carbon or mainly carbon with a little silicon for reduction-nitridation. For specimens with 40% Si addition, more than 80% of O'-sialon may be obtained when nitrided at 1500 degree sign C. The formed O'-sialon was characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The parameters for O'-Sialon preparation are optimized by computer pattern recognition program based on principal component analysis, the target parameter optimum regions with higher relative content of O'-Sialon was indicated by this way.
2004-11-15
New synthesis routes for Sialon and Sialon-bonded ceramics
International Nuclear Information System (INIS)
The use of Sialon ceramics has been restricted by the high temperature required for synthesis and the expense of the pure oxide and nitride raw materials required. For refractory applications the purity required is less demanding and it has been possible to exploit the outstanding durability of the Sialons at moderate cost. New low cost manufacturing routes are being developed by nitriding silicon metal powder at relatively low temperature with clay and various additives depending on the Sialon required. For example the introduction of carbon or fine silicon carbide allows the preparation of beta Sialons and alpha Sialons which can be stabilised by including the appropriate cations. A wide range of composite Sialon bodies with diverse properties can be prepared by a one step process. Current projects developing the synthesis routes are aimed, in the first instance, at refractory manufacture but are ...
1998-09-28
Multi-Layer Inkjet Printed Contacts to Si
Energy Technology Data Exchange (ETDEWEB)
Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 deg C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 deg C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.
2005-11-01
Crystallisation of grain boundary phases in silicon nitride and sialon ceramics
International Nuclear Information System (INIS)
A survey is presented of the principles and practice of tailoring sintering liquid composition and processing cycle to enable crystallisation of intergranular phases in silicon nitride and sialon ceramics. Critical features in sialon ceramics are the O/N balance in residual glasses and post-sintering heat-treatment temperatures to enable nucleation of either intermediate phases at constant composition or oxide phases with re-partitioning of non stoichiometric components in #beta#' or #alpha#' solid solutions. Crystallisation of disilicate phases in non-sialon compositions exemplifies a problem in control of polymorphs with differing atomic volumes. Crystallisation of intergranular phases has an influence mainly on high-temperature mechanical and environmental behaviour of these ceramics. (orig.).
1993-10-04
Ceramic bearings for application to hard disc drives (HDD); HDD yo ceramic ball bearing
Energy Technology Data Exchange (ETDEWEB)
Ceramic ball bearings of silicon nitride are used for hard disk drive (HDD) spindle motors, to increase seed, reliability and memory capacity of the HDDs. Silicon nitride ceramics have advantages of lightweight, high strength and hardness over the conventional steel for bearings, but is expensive. A new process of high cost performance has been developed for mass production of the small-size ceramic balls. The company plans to apply these bearings to higher devices, e.g., servers, for the time being, and to expand the applicable areas, e.g., common devices and other small-size motors. The ceramic bearings have been developed jointly with Koyo Seiko Co. Ltd. (translated by NEDO)
2000-03-01
Nanoporous YSZ film in electrolyte membrane of Micro-Solid Oxide Fuel Cell
International Nuclear Information System (INIS)
Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.
2010-06-01
Energy Technology Data Exchange (ETDEWEB)
The pyrometallurgic method consisting in introduction of refining agent into the liquid cadmium has been presented. The refining agent consisting of silicon nitride, carbon dust and sodium hydroxide has been added in several portion into the liquid cadmium. Iron has been removed from the cadmium surface in the form of floating slag.
1992-10-30
The adiabatic engine:Global developments
Energy Technology Data Exchange (ETDEWEB)
This book presents papers on internal combustion engines. Topics considered include the influence of partial suppression of heat rejection on performance and emissions, duothermic combustion, turbochargers made of sintered silicon nitrides, heat flux, low heat rejection engines, exhaust energy recovery, combustion chamber insulation, computerized simulation, heat transfer, friction, hoop stress effects, and bonding ceramics and metals.
1986-01-01
Energy Technology Data Exchange (ETDEWEB)
An optimization criterion accounting for the energy and material consumption is defined. The allowed limits of the variations in the technological factors are discussed and the optimization criterion values within these limits are calculated. The analysis presented, demonstrating the significance of the chosen factors for the production cost-price, is of great practical importance. (orig.).
1991-08-15
High resolution transmission electron microscopy of a #beta#'-sialon-TiN nanocomposite
International Nuclear Information System (INIS)
TEM and HRTEM have been used to characterise the microstructures of materials formed by hot-pressing silicon nitride with an Al_2O_3-SiO_2-TiO_2 densification aid system, to form #beta#'-sialon-TiN composites in which the TiN particles are of 20-100 nm dimension. (orig.).
1992-06-21
Integration of fiber coupled high-Q silicon nitride microdisks with magnetostatic atom chips
Micron scale silicon nitride (SiNx) microdisk optical resonators fabricated on a silicon wafer are demonstrated with Q = 3.6 x 10^6 (finesse = 5 x 10^4) and an effective mode volume of 15 (\\lambda / n)^3 at wavelengths \\lambda ~ 852 nm resonant with the D2 transition manifold of cesium. A dilute hydrofluoric wet etch is shown to provide sensitive tuning of the microdisk optical resonances, and robust mounting of a fiber taper provides efficient fiber optic coupling to the SiNx microdisk cavities while allowing unfettered optical access for laser cooling and trapping of atoms. Initial measurement of a hybrid atom-cavity chip indicates that cesium adsorption on the surface of the SiNx microdisks results in significant red-detuning of the disk resonances. A technique for parallel integration of multiple (10) microdisks with a single optical fiber taper is also demonstrated.
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical analysis by X-ray photoelectron spectroscopy is reported for both the ...
2008-01-30
Energy Technology Data Exchange (ETDEWEB)
The growth of stoichiometric and non-stoichiometric silicon nitride films was studied experimentally on 100 mm silicon wafers by batch depositions from the dichlorosilane (SiH{sub 2}Cl{sub 2})-ammonia (NH{sub 3}) system in a hot-wall horizontal low pressure chemical vapor deposition (LPCVD) reactor. The growth kinetics were discussed in terms of the Langmuir adsorption isotherm. The kinetic parameters were determined by comparing the experimental data with a one-dimensional simulation model. The decomposition of NH{sub 3} at high temperatures was included in the simulation procedure. When the SiH{sub 2}Cl{sub 2}:NH{sub 3} ratios were greater than 1.5, a quantity higher than the thermodynamic critical values above which Si-rich nitride films begin to deposit, various SiN{sub x} films with x < 4/3 were obtained. The composition of the SiN{sub x} films was found to vary along the LPCVD reactor. The film ...
1992-06-15
Energy Technology Data Exchange (ETDEWEB)
The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was ...
1992-08-28
Synthesis and characterization of #beta#-SiAlON with a rare earth concentrate as sintering aid
International Nuclear Information System (INIS)
Silicon nitride-based ceramics behavior is strongly influenced by microstructural parameters, which, in turn are determined by chosen densification method. Highly covalent Si-N bond hind are the silicon nitride densification. Therefore, metal oxides are used in order to get high density. However, such oxides must be carefully selected, because they affect the general macroscopic properties of sintered bodies. In the present work, the viability of rare earth concentrate use to produce #beta#--Si_6_-_xAl_xO_xN_8_-_x and its effect on mechanical properties of the sintering ceramics are studied. Additive composition, heating rate, soaking time and sintering temperature were took as variables. Hardness, fracture toughness, Young's modulus and flexural strength were investigated. Lattice parameter compositional dependence and secondary phases crystallized after past-sintering heat treatment were also ...
Energy Technology Data Exchange (ETDEWEB)
Aiming to realize ball bearings operable in a vacuum and under high temperature, silicon nitride (Si3N4) ceramic ball bearings were tested. The tested ball bearings were angular contact ball bearings composed of silicon nitride with sputtered molybdenum disulfide coating using a retainer of hot-pressed self-lubricating composite material. The time variation of the frictional torque was examined for the operations under the conditions at 500{degree}C in a vacuum at a rotational speed of 600 rpm and 50N thrust load for 5{times}10{sup 7}revolutions (1400 hours) and for 1.5{times}10{sup 8}revolutions (4200 hours). Excellent tribological performance was obtained. The ball bearings are lubricated with the molybdenum disulfide film at the initial stage of the operation and with a transfer film formed from the retainer material to the balls. In a test at 650{degree}C, low and stable frictional torque was ...
1996-04-05
Fine-ceramic anitifriction bearings
Energy Technology Data Exchange (ETDEWEB)
Ceramic antifriction bearings were introduced in excellent characterics and application. In main shaft use bearings of the machine tool, to be heightened in efficiency and accuracy by the heightening in speed, centrifugal load to the outer ring is not negligible to shorten the bearing in life. Also ball bearings with a contact angle are easily corroded by a very strong revolution slide due to the gyromoment. The use of such light weight material as silicon nitride's can design the lengthening in life. Also the utilization of high rigidity can prevent the inner ring from expanding by centrifugal force and enable the machining to be with a high accuracy. Ceramic rolling element is excellent also in backing resistant property and effective on the oily film cut. With heat resistant property, it maintains hardness even at high temperature. Such excellent characteristics being utilized, the fine ceramic antifriction bearing is used for the ...
1989-08-01
Studies of dynamic contact of ceramics and alloys for advanced heat engines: Final report
Energy Technology Data Exchange (ETDEWEB)
In support of the efforts to apply ceramics in advanced heat engines, a study was made of the sliding performance of ceramics at the ring/cylinder interface of low heat rejection engines. The objective was to understand the basic mechanisms controlling the wear of candidate ceramics and thereby identify means for applying these ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and several plasma-sprayed ceramic coatings without lubrication were unsuccessful because of high friction and high wear rates. Experiments using a polyalphaolefin lubricant at temperatures to 260 C identified several combinations having wear rates in the general range likely to be acceptable for engines. Plasma-sprayed coatings of chromium oxide and hypersonic powder flame sprayed coatings of cobalt-bonded tungsten carbide performed particularly well as ring coatings. Similar performance was ...
1988-03-01
Energy Technology Data Exchange (ETDEWEB)
The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)
1998-01-01
British Library Electronic Table of Contents (United Kingdom)
Abstract Silicates are one of the most important classes of compounds on this planet, and more than 1000 silicates have been identified in the mineral kingdom. Additionally, several hundreds of artificial silicates have been synthesized. The substitution of oxygen by nitrogen leads to the structurally diverse and manifold class of nitridosilicates. Silicon nitride, one of the most important non-oxidic ceramic materials, is the binary parent compound of nitridosilicates, and it symbolizes the inherent material properties of these refractory compounds. However, prior to the last decades, a broad systematic investigation of nitridosilicates had not been accomplished. In the meantime, these and related compounds have reached a remarkable level of industrial application. This review illustrates...
2011-01-01
Effects of the insertion of a thick sp"2 buffer layer on the adhesion of cBN-rich film
International Nuclear Information System (INIS)
A method was proposed and examined to deposit thick cubic boron nitride (cBN)-rich layer of good adhesion to silicon substrate. The method combined (i) the insertion of a thick sp"2 buffer layer, and (ii) the use of an appropriate assist ion beam energy for the growth of the cBN-rich top layer. The sp"2-bonded boron nitride buffer layer was deposited under irradiation of ions with energies in the range of 200-360 eV. The buffer layer was found to contain curled graphitic basal planes, and so was supposed to be relatively deformable, and facilitate the relaxation of stresses in the cBN-rich top layer. The ion assist introduced during the growth of the cBN-rich layer was supposed to both create and annihilate defects, and so resulted in the generation and relaxation of internal stresses. Results showed that the insertion of a 492 nm sp"2 buffer layer, and the use of a beam energy of 450 eV for assisting the growth of the top ...
2004-05-01
Development and cytotoxicity evaluation of SiAlONs ceramics
International Nuclear Information System (INIS)
SiAlONs are ceramics with high potential as biomaterials due to their chemical stability, associated with suitable mechanical properties, such as high fracture toughness and fracture resistance. The objective of this work was to investigate the mechanical properties and the cytotoxicity of these ceramic materials. Three different compositions were prepared, using silicon nitride, aluminum nitride and a rare earth oxide mixture as starting powders, yielding Si_3N_4-SiAlON composites or pure SiAlON ceramics, after hot-pressing at 1750 deg. C, for 30 min. The sintered samples were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). Furthermore, hardness and fracture toughness were determined using the Vicker's indentation method. The biological compatibility was evaluated by in vitro cytotoxicity tests. Ceramic with elevated hardness, ranging between 17 and 21 GPa, and high fracture ...
2007-01-01
Wear and machining of engineering ceramics by abrasive waterjets
Energy Technology Data Exchange (ETDEWEB)
The purpose of this investigation was to simulate a machining front from an abrasive waterjet and its movements in a ceramic material. Wear factors affecting the abrasive waterjet nozzle were also to be established. Therefore, a low inclination angle (9[degree]) was used between the nozzle and test sample, simulating a moving machine front. A standard nozzle with an inner diameter of 0.76 mm was used in the test, and it was placed close to the samples. The outer diameter of the abrasive nozzle was 9.5 mm. The high wear rate from abrasive waterjets makes it possible to machine hard ceramics-including dense alumina, titanium boride, silicon nitride, and composites-at high machining speeds.
1993-08-01
International Nuclear Information System (INIS)
20 nm thick permalloy elements, with dimensions of 500 x 500 nm"2 and 1000 x 200 nm"2, have been fabricated on 50 nm thick silicon nitride substrate by milling using a focussed ion beam (FIB) microscope. The dose of ion beam used for the milling was varied in order to achieve the best definition for the milled areas. The FIB milled elements were characterised physically by atomic force microscopy (AFM) and bright field transmission electron microscopy (TEM) and magnetically by Fresnel imaging on a TEM modified for magnetic imaging. The FIB milled elements were found to have a more irregular edge and lower magnetic fields for events such as vortex annihilation when compared to elements of the same dimensions fabricated by conventional electron beam microscopy (EBL).
2006-02-22
International Nuclear Information System (INIS)
We have fabricated nanometer-spaced electrodes on electron-transparent silicon nitride membranes. A thin Cr/Au layer is evaporated on the backside of the membrane which serves as a gate electrode. Using these devices, we have performed three-terminal electron transport measurements on gold nano-particles at liquid helium temperature. Coulomb Blockade features have been observed and the capacitance to the gate has been extracted. After transport measurements, the Cr/Au back gate is removed and the devices are inspected with a transmission-electron microscope (TEM). TEM inspection reveals the presence of a few nano-particles in the nanogap, which is in agreement with the transport measurements. In addition, the nano-particle size as observed by TEM coincides with the one estimated from the gate capacitance value.
2009-10-14
Energy Technology Data Exchange (ETDEWEB)
Million-atom molecular-dynamics (MD) simulations are performed to study the structure, mechanical properties, and dynamic fracture in nanophase Si{sub 3}N{sub 4}. The authors find that intercluster regions are highly disordered: 50% of Si atoms in intercluster regions are three-fold coordinated. Elastic moduli of nanophase Si{sub 3}N{sub 4} as a function of grain size and porosity are well described by a multiphase model for heterogeneous materials. The study of fracture in the nanophase Si{sub 3}N{sub 4} reveals that the system can sustain an order-of-magnitude larger external load than crystalline Si{sub 3}N{sub 4}. This is due to branching and pinning of the crack front by nanoscale microstructures.
1997-09-01
Energy Technology Data Exchange (ETDEWEB)
This paper describes the experimental results of long-life solid lubricated ball bearings tested under high-vacuum of 10 exp -4 Pa, high-temperature of 300 C, and high-speed (9000 rpm) conditions. For full ball-type bearings, the thin soft metals, either Ag or Pb, which were coated on the races and balls, appeared to have good torque properties. However, the durability of such bearings was less than 300 hours. The transfer films from the lamellar solid MoS2 and metal composite retainers improved the torque and wear properties. For ceramic, i.e., silicon nitride, balls used with steel rings, wear occurred on the inner rings. All ceramic bearings with composite retainers showed improved torque and wear properties. 18 refs.
1993-04-01
US Army workshop on low-heat-rejection engines (4th). Sessions report for 29-31 March 1989
Energy Technology Data Exchange (ETDEWEB)
There are a number of characteristics exhibited by ceramic materials that may provide potential benefits for the reciprocating internal combustion engine. However, the brittle nature of these materials together with a variability in strength has created difficulties in applying ceramic materials to the engine environment. Although a wide range of physical properties is available from contemporary ceramic materials, a material offering consistently high strength has yet to be developed. For sliding-contact applications, desirable characteristics include good wear resistance, low friction, ability to join metals and good heat dissipation. Test results have shown that cam/follower components with cast iron cam sliding on a silicon nitride follower exhibit very low wear rates. The application of silicon carbide to face seals has also shown substantial reductions in both friction and wear when compared with conventional ...
1989-03-31
Investigations on solar grade silicon and process engineering of advanced silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
This thesis deals with the evaluation of Solar Grade Silicon (SoG-Si) purified by different techniques, and also the fabrication and characterization of high efficiency and advanced bifacial solar cells. In the beginning of Chapter 1, various SoG-Si production methods relevant for this work are qualitatively described. The three feedstock materials used in this work are from the Fluidized Bed Reactor (FBR) process, metallurgical feedstock-I and feedstock-II process. In metallurgical feedstock-I, the lifetime of the minority charge carriers in multicrystalline silicon (mc-Si) samples at the grain boundaries are found to be higher than the grains themselves possibly due to lower resistivities in the grain boundaries. The efficiency of the best solar cell obtained using the mc-Si metallurgical feedstock-I is 16.1%. It has been identified that the fast light induced degradation, whose magnitude is lower than that of a reference cell suggests the ...
2007-07-01
Energy Technology Data Exchange (ETDEWEB)
Dominating factors in plasma nitriding and plasma condition that makes nitriding possible in plasma nitriding process of metals having hard oxide film were studied. In case of stainless steel, oxide film sputtering was easier comparing to nitriding layer. Three phenomena such as sputtering of oxide layer, formation of nitriding layer and sputtering of nitriding layer occurred simultaneously. Nitriding was achieved when the formation of nitriding layer reached the peak comparing to the removal of nitriding layer after the removal of oxide layer. Situations of metallic surface of stainless steel in surface nitriding were divided into four categories and they were, situation where oxide layer remained as it is, situation where nitriding layer was formed although ...
1994-05-05
Ion nitriding; Proceedings of the International Conference, Cleveland, OH, Sept. 15-17, 1986
Energy Technology Data Exchange (ETDEWEB)
The present conference discusses plasma-assisted surface coating/modification processes, the applications to date of ion nitriding, the effects of nitrogen on metal surfaces, ion nitriding mechanisms in Cr, Al and Cr + Al-containing 1040 steel, ion nitriding of Al and its alloys, life enhancement for forging dies, novel anode plasma nitriding developments, and a comparative study of the pulsed and dc ion-nitriding behavior in specimens with blind holes. Also discussed are the influence of heating method on ion nitriding, surface hardening of marage steels by ion nitriding without core hardness reduction, plasma nitriding of nodular cast iron sput gears, NbN composites for superconductors, the carburization of tungsten in a glow discharge methane plasma, economic considerations concerning plasma ...
1987-01-01
Energy Technology Data Exchange (ETDEWEB)
The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200 mm and 300 mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the {mu}m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of the structures, they were provided with an additional silicon nitride layer. Four structure ...
2008-12-15
International Nuclear Information System (INIS)
The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200 mm and 300 mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of the structures, they were provided with an additional silicon nitride layer. Four structure types of different bar ...
2008-12-01
Limitations of silicon devices for quantum computing
Energy Technology Data Exchange (ETDEWEB)
There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)
2004-04-28
Textured silicon nitride: processing and anisotropic properties
International Nuclear Information System (INIS)
Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental ...
2008-07-01
Energy Technology Data Exchange (ETDEWEB)
We studied whether plasma-etching techniques can use standard screen-printed gridlines as etch masks to form self-aligned, patterned-emitter profiles on multicrystalline-silicon (mc-Si) cells from Solarex. We conducted an investigation of plasma deposition and etching processes on full-size mc-Si cells processed in commercial production lines, so that any improvements obtained would be immediately relevant to the PV industry. This investigation determined that reactive ion etching (RIE) is compatible with using standard, commercial, screen-printed gridlines as etch masks to form self-aligned, selectively doped emitter profiles. This process results in reduced gridline contact resistance when followed by plasma-enhanced chemical vapor deposition (PECVD) treatments, an undamaged emitter surface easily passivated by plasma-nitride, and a less heavily doped emitter between gridlines for reduced emitter recombination. This allows for heavier doping ...
1997-10-14
Development of SiC-AlN and SiC-SiAlON refractory composites
International Nuclear Information System (INIS)
SiC-AlN and SiC-SiAlON refractory composites were obtained by means of nitridation of the mixtures of silicon carbide (SiC) powder with a broad granulometric distribution and powders of aluminium (Al) and aluminium-silicon (Al-Si) mixtures. The mixtures of the composition Al-25% Si, Al-50% Si and Al-75% Si were previously prepared by means of 'mechanical alloying' technique. Thermodynamic analysis was accomplished in order to evaluate the viability of SiC-SiAlON and SiC-AlN refractories production by the chosen processing method, and the results confirmed viability of such. Investigation of nitridation of Al and Al-Si powder compacts in order to obtain the AlN and #beta#-SiAlON matrix phases of the composite was accomplished by means of differential thermal analysis (DTA) and thermogravimetric analysis (TG). The results of the thermal analysis show that nitridation of the Al-25% Si, ...
Nanoporous structure formations on germanium surfaces by focused ion beam irradiations
International Nuclear Information System (INIS)
The formation of porous structures of nanometre size (nanoporous structures) on germanium (Ge) surfaces by focused ion beam (FIB) irradiations was investigated using various FIB conditions such as ion species, irradiation energies, total fluences, fluence rates, and incident angles. FIB-irradiated regions were observed using a scanning electron microscope and an atomic force microscope. It is found that, using a focused Ga ion beam (Ga FIB) at an energy of 100 keV, the irradiated Ge surface swelled up to ion fluence of 2 x 10"1"7 cm"-"2 with nanoporous structures and then was etched for larger fluences. The shape of swollen nanoporous structures depended on the fluence rate and the incident angle of the Ga FIB. However, such porous structures were observed neither for low-energy (15-30 keV) FIB irradiations using Si and Au ions nor for high-energy (200 keV), heavy ion (Au) irradiation. These observations might be helpful in ...
2007-11-07
Plasma nitriding of Fe-18Cr-9Ni in the range of 723-823 K
Energy Technology Data Exchange (ETDEWEB)
To clarify the mechanism of plasma nitriding, the authors examined the optical microstructure, the hardness, the precipitation, and the concentration of dissolved nitrogen in Fe-18Cr-9Ni nitrided using plasma in the range of 723-823 K. Compared with ammonia-gas nitriding, the features of plasma nitriding are the formation of small chromium-nitride precipitates (CrN), the absence of an externally nitrided layer, the high concentration of dissolved nitrogen, and the high hardness (HV = 1,200). The diffusion coefficient of nitrogen in the present alloy was determined using the growth rate of the internally nitrided layer, based on calculations used in internal oxidation. Plasma- and gas-nitriding were also compared with respect to the growth rate of the nitrided layer.
1991-08-01
Energy Technology Data Exchange (ETDEWEB)
Since actinide mononitride has several superior thermal and neutronic properties, nitride fuel is considered as a candidate for future nuclear systems, such as advanced fast reactors and accelerator-driven system. Establishing reprocessing technology is one of key technologies for the development of nitride fuel cycle. In addition to general advantages of pyrochemical process, such as the potential for economy, radiation and proliferation resistance, recycling of N-15 in nitride fuel seems to be practical in comparison with conventional hydro-process. Following the electrochemical measurements of nitride fuel in LiCl-KCl molten salt, the experimental study on closing nitride fuel cycle has been carried out in JAEA by used of TRU nitride and burnup simulated nitride samples. Recent progress of the study is summarized in this paper.
2008-08-15
Energy Technology Data Exchange (ETDEWEB)
17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.
2007-04-15
International Nuclear Information System (INIS)
17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.
2007-04-01
Plasma nitriding of pure iron and stainless steel. Juntetsu oyobi stainless ko no plasma chikka
Energy Technology Data Exchange (ETDEWEB)
As for surface treatment of steel, the ion nitriding method has a lot of advantages and is practically used, while the plasma nitriding is known as a method which is faster in nitriding than the ion nitriding method. However, there are few reports and many unclear points on the plasma nitriding method. In this study, the plasma nitriding of pure iron and SUS304 is conducted using r.f. nitrogen plasma glow discharge to examine composition of the nitrided layers, microstructures, nitriding rate, etc. Moreover, by exposing the specimen once nitrided to H2 plasma, a phenomenon that nitrogen comes out of the specimen surface is examined. It is found from the result that the nitrided layer is divided into a compound layer and a diffusion layer in order from the surface, that in case of ...
1992-11-25
Surface modification of magnesium base alloys by gas/plasma nitridation
Energy Technology Data Exchange (ETDEWEB)
Gas and plasma nitriding processes were executed in the magnesium with modification by titanium in search for an effective surface treatment method for magnesium alloys. Magnesium-nitrogen system has completely no solid solution or solubility, so that nitride should be only formed by eutectic reaction in the liquid phase. Hence, magnesium is difficult or nearly impossible to have its surface modified by nitriding. Addition of nitride forming element into magnesium enables us to lower the onset temperature of nitriding. Magnesium-titanium alloys with 1 to 5 wt% are yielded by the bulk mechanical alloying and, subjected to gas nitriding for various process conditions. Successful co-formation of Mg{sub 3}N{sub 2} as well as TiN becomes a proof to demonstrate the possibility of gas/plasma nitriding in the solid-state magnesium with aid of ...
2000-07-01
Investigation into some tribological properties of plasma nitrided hot-worked tool steel AISI H11
Energy Technology Data Exchange (ETDEWEB)
Interest in the tribological properties of plasma nitriding has increased substantially over the past years because plasma nitriding provides a high nitride depth and improved hard facing. The present study examines the tribological properties of AISI H11 plasma nitrided, hot-worked steel. Different nitriding temperatures and durations were considered. Characterization of the composite structures was investigated with wear tests, x-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), and microhardness tests. The depth profile of the nitrided zone was measured using the nuclear reaction analysis (NRA) technique. Plasma nitriding affected the microhardness, wear properties, and morphology considerably. Increase in process temperature increased the nitride zone depth.
1996-04-01
Oxidation of sialon ceramics with widely varying alumina content
International Nuclear Information System (INIS)
Within the framework of a study on the chemical wear behaviour of sialon ceramics a range of compositions were prepared in which the alumina content was varied from 6 to 77 weight percent. The materials were hot-pressed from alumina and silicon nitride powders to a density of at least 97%. The structure and compositions of the phases occurring in these samples i.e. the O' phase, #beta#'-sialon solid solution and especially the X-phase were thoroughly characterized with respect to structure and composition using electron microprobe and transmission electron microscopy techniques. These results will be discussed in the light of earlier phase diagram studies. Some basic properties such as E-modulus and toughness were measured and related to microstructural features. E-modulus as well as toughness are at a minimum for materials with a high content of the X-phase. Oxidation of the materials was studied at 1300 deg C and 1450 deg C using weight gain ...
Chemical reactivity of silicon nitride with steel and oxidised steel between 500 and 1200 C
Energy Technology Data Exchange (ETDEWEB)
The chemical interaction of a Si{sub 3}N{sub 4} ceramic with pristine and oxidised 100Cr6 steel was studied by means of static interaction couple experiments between 500 and 1200 C. Si{sub 3}N{sub 4} was not chemically stable in contact with oxidised steel at elevated temperatures, and reacts with the formation of N{sub 2}, SiO{sub 2} and/or Fe{sub 2}SiO{sub 4} at temperatures at and above 1000 C. At 700 and 500 C, Si diffusion into the oxide layer indicated the dissociation of the Si{sub 3}N{sub 4} ceramic. Si{sub 3}N{sub 4} also dissociated in contact with pristine steel. In the temperature region between 700 and 1100 C, the Si dissolves and diffuses into the steel whereas a nitrogen pressure is built-up in the voids of the metal-ceramic interface, limiting the degree of interaction. Above 1100 C, the nitrogen dissolves and diffuses into the steel as well, enhancing the reactivity and resulting in the formation of a strong metal-ceramic interface. (orig.)
2000-04-15
Energy Technology Data Exchange (ETDEWEB)
It has been clarified by the present authors, based on the plasma nitriding of Fe-Cr alloys and Fe-Ti alloys carried out at the temperature under 550{degree}C hitherto, that an internal nitriding layer is formed due to the fine dispersion of the particles of Cr nitride and Ti nitride in {gamma}{prime} Fe4N layer on the specimen surface. In this study, the plasma nitriding of Fe-Cr alloys are carried out at 650{degree}C, and the effects of the solute (Cr) content on the structures, nitride and the thickness distribution are examined. The main results obtained therefrom are indicated hereafter. In accordance with the observation on the cross-sectional structure of the alloys, only the nitriding layer deduced as the dispersion and precipitation of the particles of Cr nitride from {alpha}-Fe of the mother phase is formed, ...
1996-03-15
Plasma nitriding of Ck 15 steel
International Nuclear Information System (INIS)
With the aim of optimizing the nitriding process parameters (temperature and gas mixture ) experimental studies of the plasma nitriding of Ck 15 steel were carried out, using a D. C. glow discharge. Nitriding treatments were performed at 450, 500 and 550 and N_2/H_2 volume ratio of 3/1, 1/1 and 1/3 for 5 hours. Nitriding treatment produces modified surface layer consisting of an outer compound layer and an inner diffusion layer.The plasma nitriding of Ck 15 produce single white layer consisting of #gamma#-(Fe_4N).
2003-08-25
Membrane protein biosensing with plasmonic nanopore arrays and pore-spanning lipid membranes
UK PubMed Central (United Kingdom)
Integration of solid-state biosensors and lipid bilayer membranes is important for membrane protein research and drug discovery. In these sensors, it is critical that the solid-state sensing...Full Text Available
2010-01-01
Interaction of Heparins and Dextran Sulfates with a Mesoscopic Protein Nanopore
UK PubMed Central (United Kingdom)
AbstractA mechanism of how polyanions influence the channel formed by Staphylococcus aureus α-hemolysin is described. We demonstrate that the probability of several...Full Text Available
2009-12-02
Earth and Environment: murray_dobbie_morris
... In recent years workers in this field have focused on nucleation by nano-porous materials . This was in part motivated by a theoretical study by Page and Sear (2006) who proposed a two step model for nucleation in pores which suggest that there is ...
British Library Electronic Table of Contents (United Kingdom)
Gas nitridation has shown excellent promise to form dense, electrically conductive and corrosion-resistant Cr-nitride surface layers on Ni-Cr base alloys for use as proton exchange membrane fuel cell (PEMFC) bipolar plates. Due to the high cost of nickel, Fe-base bipolar plate alloys are needed to meet the cost targets for many PEMFC applications. Unfortunately, nitridation of Fe-base stainless steel alloys typically leads to internal Cr-nitride precipitation rather than the desired protective surface nitride layer formation, due to the high permeability of nitrogen in these alloys. This paper reports the finding that it is possible to form a continuous, protective Cr-nitride (CrN and Cr2N) surface layer through nitridation of Fe-base stainless steel alloys. The key to form a protective Cr...
2007-01-01
Plasma nitrided titanium as a bipolar plate for proton exchange membrane fuel cell
Energy Technology Data Exchange (ETDEWEB)
Plasma nitriding was applied to improve the surface performance of titanium bipolar plate. XRD and SEM results showed a titanium nitride layer was formed after nitridation. In comparison with pure titanium, the interfacial contact resistance of plasma nitrided titanium was reduced to some extent by the nitridation treatment. However, high corrosion current was observed under electrochemical tests in 0.5 M H{sub 2}SO{sub 4} + 5 ppm HF. Both the electrical conductivity and corrosion resistance of the surface of plasma nitriding titanium did not reach the level of graphite. Some more improvements are expected in the plasma nitriding process or another surface modification on pure titanium. (author)
2009-02-15
Nitride Fuel for Fast Neutron Nuclear Reactors
International Science & Technology Center (ISTC)
Development of Technology for Producing High-Effective Nitride Fuel UN with Controlled Microstructure for Advanced Fast Neutron Nuclear Reactors
Energy Technology Data Exchange (ETDEWEB)
The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. ...
2002-09-01
International Nuclear Information System (INIS)
Recent research carried out in laboratories showed that Saddle field neutral fast atom beam source is a promising method for nitriding of stainless steel. In the present work, the effect of treatment time on the microstructural and mechanical properties of plasma-nitrided stainless steel sample was investigated by this new method. Plasma nitriding was carried out at 420 deg. C and at a pressure of 0.1 Pa for a time range of 1 to 12 h. SEM-EDX, microhardness tests, optical microscopy and X-ray diffraction (XRD) were used to evaluate the mechanical and structural properties of the nitrided layer. It was found that nitriding time has a pronounced effect on the structural and mechanical properties of low-temperature plasma-nitrided samples and produced a precipitation-free thin hard nitrided layer within a short processing time.
2006-09-25
Nanoporous materials can be made stiffer than non-porous counterparts by surface modification
Energy Technology Data Exchange (ETDEWEB)
Nano-materials in which a large fraction of atoms resides within a few atomic layers near the surface can be designed to have novel properties by manipulating their surface parameters. We show that the effective elastic constants of nano-porous/cellular materials can be made to exceed those of the parent materials provided the pore surface elastic parameters satisfy certain conditions. These stiff nano-porous materials herald a radical breakthrough in sandwich-type construction.
2006-06-15
Nanoporous materials can be made stiffer than non-porous counterparts by surface modification
International Nuclear Information System (INIS)
Nano-materials in which a large fraction of atoms resides within a few atomic layers near the surface can be designed to have novel properties by manipulating their surface parameters. We show that the effective elastic constants of nano-porous/cellular materials can be made to exceed those of the parent materials provided the pore surface elastic parameters satisfy certain conditions. These stiff nano-porous materials herald a radical breakthrough in sandwich-type construction.
2006-06-01
Energy Technology Data Exchange (ETDEWEB)
The present work describes the surface improvement and biocompatibility of TiAl{sub 24}Nb{sub 10} intermetallic alloy using rf plasma nitriding. The nitriding process was carried out at different plasma power from 400 W to 650 W where the other plasma conditions were fixed. Grazing incidence X-ray diffractometry (GIXRD), Auger electron spectroscopy (AES), tribometer and a nanohardness tester were employed to characterize the nitrided layer. Further potentiodynamic polarization method was used to describe the corrosion behavior of the un-nitrided and nitrided alloy. It has been found that the Vickers hardness (HV) and corrosion resistance values of the nitrided layers increase with increasing plasma power while the wear rates of the nitrided layers reduce by two orders of magnitude as compared to those of the un-nitrided ...
2007-09-30
International Nuclear Information System (INIS)
The present work describes the surface improvement and biocompatibility of TiAl_2_4Nb_1_0 intermetallic alloy using rf plasma nitriding. The nitriding process was carried out at different plasma power from 400 W to 650 W where the other plasma conditions were fixed. Grazing incidence X-ray diffractometry (GIXRD), Auger electron spectroscopy (AES), tribometer and a nanohardness tester were employed to characterize the nitrided layer. Further potentiodynamic polarization method was used to describe the corrosion behavior of the un-nitrided and nitrided alloy. It has been found that the Vickers hardness (HV) and corrosion resistance values of the nitrided layers increase with increasing plasma power while the wear rates of the nitrided layers reduce by two orders of magnitude as compared to those of the un-nitrided layer. ...
2007-09-30
Early stages during plasma nitriding of pure iron
Energy Technology Data Exchange (ETDEWEB)
The sequence of nitride formation during the early stages of plasma nitriding of pure iron was studied by optical microscopy, SEM, TEM and x-ray diffraction. Plasma nitriding at {approximately}490 C in a 25 vol.%H{sub 2} + 75 vol.%N{sub 2} mixture starts with the formation of {gamma}{prime}-Fe{sub 4}N after 40s. Once {gamma}{prime} nucleates, it mainly spreads laterally due to diffusion shortcuts in the discontinuous surface nitride layer. Before {gamma}{prime} is continuous on the surface, {epsilon} nucleates on top of it shortly after 40S. Epsilon is then observed to grow, both inwardly and laterally along with {gamma}{prime}. A compact {gamma}{prime}/{epsilon} bilayer forms on the surface at around 100s. The kinetics of nucleation, growth and compactation of the nitrides observed in the present work was significantly more rapid than in any of the nitriding ...
1995-12-31
The role of plasma potential in d.c. glow discharge conditions in nitriding process of EJ961 steel
International Nuclear Information System (INIS)
Results of researches on nitriding process of EJ961 steel are presented in this work. This steel was subjected to nitriding both on the cathode and on the isolated from cathode and anode substrate, that is at so called potential of glow discharged plasma. Nitriding processes were performed using device for glow discharge treatments with cooled anode. (author)
2002-09-18
RF plasma nitriding of severely deformed iron-based alloys
International Nuclear Information System (INIS)
The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10"-"5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of #epsilon# and #gamma#' nitrides in the compound layer, with a ...
2003-05-15
New applications for plasma nitriding
International Nuclear Information System (INIS)
Low pressure plasmas have some promising advantages for nitriding The separation of plasma generation from the workpiece overcomes several of the major drawbacks of conventional plasma nitriding and also allows independent control of ion flux and energy This opens the possibility of nitriding at lower temperatures so that the process can be extended to a wider range of materials and applications. Copyright (1999) Materials Australia
1999-06-01
Plasma nitriding of microalloyed steel
Energy Technology Data Exchange (ETDEWEB)
Microalloyed or high strength low alloy (HSLA) steels are carbon-manganese steels containing small amounts of Nb, V or Ti. The excellent mechanical properties of these alloys, particularly high yield strength, usually obviate the need for expensive quench and tempering operations. Furthermore, the presence of a significant amount of nitride-forming elements in some microalloyed steels has generated interest in the applicability of these alloys as a new generation of nitriding steels. In this paper, a study of the plasma nitriding behaviour of a commercially available microalloyed steel MAXIMA{sup TM} is reported. A comparison is made with a traditional quenched and tempered nitriding steel (En19), plasma nitrided under similar conditions. Optical and scanning electron microscopy in conjunction with microhardness measurements and X-ray diffraction were utilized to characterize the ...
1995-03-01
Energy Technology Data Exchange (ETDEWEB)
Pulsed DC-plasma nitriding has been applied to form nitride layer having only a diffusion layer. The discharge current with the variation of discharge gases is proportional to the intensity of N{sub 2}{sup +} peak in optical emission spectroscopy during the plasma nitriding. The discharge current, microhardness in surface of substrate and depth of nitride layer increased with the ratio of N{sub 2} to H{sub 2} gas in discharge gases. When the ratio of N{sub 2} to H{sub 2} is lower than 60% in the discharge gases, high microhardness value of 1100Hv nitride layer which contains no compound layer has been formed. (author). 20 refs., 6 figs., 1 tab.
2002-06-01
Duplex surface treatment of AISI 1045 steel via plasma nitriding of chromized layer
British Library Electronic Table of Contents (United Kingdom)
In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273K for 5h. The samples were then plasma-nitrided for 5h at 803K and 823K, in a gas mixture of 75%N2+25%H2. The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8mm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layer...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Duplex-coating procedures consisting of plasma nitriding and Me-C:H hard coating lead to an improved performance of the devices because the Me-C:H coating is supported by the nitrided phase and, therefore, the `eggshell-effect` is avoided. Furthermore, this support leads to a higher load-bearing capacity of the thin film. Two standard procedures (classical high-pressure plasma nitriding and unbalanced magnetron sputtering of Ti-C:H) were performed subsequently to prepare the duplex coatings on X20Cr13 ferritic stainless steel. The corrosion resistance of the steel could be improved by nitriding at 450 C compared to the untreated ferritic substrate. The roughness is determined by the nitriding step. The weakest point of the coating is the transition zone between the nitrided and the untreated substrate and not the interface between the Ti-C:H coating and the ...
1998-06-08
Energy Technology Data Exchange (ETDEWEB)
The properties of polycrystalline (Ti, Al)N coatings deposited on non-nitrided, classically plasma-nitrided and low pressure plasma-nitrided AISI H11 steel samples were investigated. The plasma deposition and low pressure plasma nitriding were performed in a Z700-LH magnetron sputter ion plating unit, while a separate unit was used for plasma nitriding of specimens at a pressure of several millibars. The (Ti, Al)N coating was deposited onto all the samples using the same equipment as for the plasma deposition and low pressure plasma nitriding. For the characterization of the composite structures, the following methods were used: scratch test, X-ray diffraction analysis, scanning electron microscopy, scanning tunnelling microscopy and microhardness testing. It was found that plasma nitriding prior to coating deposition strongly affects the ...
1993-05-15
In-situ growth of porous alumino-silicates and fabrication of nano-porous membranes
Feasibility of depositing continuous films of nano-porous alumino-silicates, primarily zeolites and MCM-41, on metallic and non-metallic substrates was examined with an aim to develop membranes for separation of gaseous mixtures and also for application as hydrogen storage material. Mesoporous silica was deposited in-side the pores of these nano-porous disks with an aim to develop membranes for selective separations. Our study involves supported zeolite film growth on substrates using in-situ hydrothermal synthesis. Faujasite, Silicalite and Mesoporous silica have been grown on various metallic and non-metallic supports. Metallic substrates used for film growth included anodized titanium, sodium hydroxide treated Titanium, Anodized aluminum, and sintered copper. A non-metallic substrate used was nano-porous aluminum oxide. Zeolite film growth was characterized using Scanning Electron Microscope (AMRAY 1820) and High ...
2009-01-01
Study of total ionizing dose radiation effects on nitride/oxide stack gate MOS capacitor
International Nuclear Information System (INIS)
The aim of this paper is to investigate the total ionizing dose (TID) radiation effects on MOS capacitor with nitride/oxide stack gate. The stack gate MOS capacitors are fabricated with 20 nm oxide, 40 nm nitride or 110 nm nitride respectively. Through the analysis of CV curve of the irradiation capacitors, it is found that the degradation of the CV curve is due to a significant increase of interface traps and somewhat smaller oxide charge. It is also shown that the thicker of the nitride, more interface traps and oxide charge will be occurred. (authors)
2008-07-01
Energy Technology Data Exchange (ETDEWEB)
PulsPlasma nitriding is now one of the established nitriding methods. This article describes PulsPlasma nitriding procedures and the boundary conditions necessary. The special features of PulsPlasma technology compared to DC plasma systems are illustrated. In addition, the process benefits of material treatment using a plasma are examined, as is system type. The article concludes with typical applications of PulsPlasma technology for treatment of stainless steel, cold-working steel, hot-working steel and sintered steel. (orig.)
2003-09-01
Ion nitriding of Armco iron in various glow discharge regions
Energy Technology Data Exchange (ETDEWEB)
This paper presents the first results of a study of plasma nitriding in various regions of a d.c. glow discharge, i.e. on the cathode, on the anode, and on a substrate isolated from the cathode and anode (at plasma potential). The results obtained reveal differences in the growth kinetics and surface morphology of the nitriding layers, depending on the region where the nitriding process took place. The aim of this work was to study the role of low temperature plasma in the plasma nitriding process. The processes were carried out in an apparatus for plasma treatment with a hot anode. (orig.)
1993-10-01
An influence of ion bombardment on plasma nitriding process of Ti6Al14V alloy at 843 K temperature
International Nuclear Information System (INIS)
This work presents results of investigations on d.c. glow discharge nitriding of #alpha#+#beta# Ti-6Al-4V titanium alloy. The treatment was performed at 843 K in nitrogen-hydrogen atmosphere, pressure 300 Pa. Special attention was paid to nitriding mechanism and determination of the role of ion bombarding in nitriding process of titanium alloys. Produced as a result of d.c. plasma nitriding surface layers were subjected to macroscopic observations, microstructure studies, microhardness testing and X-ray analysis. (author)
2004-06-20
A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.
1979-01-01
Simultaneous plasma nitriding and ageing treatments of precipitation hardenable plastic mould steel
Energy Technology Data Exchange (ETDEWEB)
Simultaneous nitriding and ageing heat treatments of precipitation hardenable tool steel was carried out inside a DC-pulsed plasma nitriding reactor. A single heat treatment cycle was done, as the plasma nitriding and age hardening processes occur approximately at the same ranges of temperatures and times. Specimens of Cr-Ni-Mo-Al age hardenable steel, in the solubilized and solubilized and aged conditions, were tested. Plasma nitriding and ageing, carried out at 500 deg. C for times ranging between 2 and 8 h, increased the surface hardness up to 1000 HV, producing case depths between 100 and 200 {mu}m. The core hardness of solubilized samples increased from 30 to 39 Rockwell C after the plasma nitriding treatment proving the possibility of nitriding and ageing at the same treatment cycle. The pre-aged samples did not show any overageing after the simultaneous ...
2007-07-01
Simultaneous plasma nitriding and ageing treatments of precipitation hardenable plastic mould steel
International Nuclear Information System (INIS)
Simultaneous nitriding and ageing heat treatments of precipitation hardenable tool steel was carried out inside a DC-pulsed plasma nitriding reactor. A single heat treatment cycle was done, as the plasma nitriding and age hardening processes occur approximately at the same ranges of temperatures and times. Specimens of Cr-Ni-Mo-Al age hardenable steel, in the solubilized and solubilized and aged conditions, were tested. Plasma nitriding and ageing, carried out at 500 deg. C for times ranging between 2 and 8 h, increased the surface hardness up to 1000 HV, producing case depths between 100 and 200 #mu#m. The core hardness of solubilized samples increased from 30 to 39 Rockwell C after the plasma nitriding treatment proving the possibility of nitriding and ageing at the same treatment cycle. The pre-aged samples did not show any overageing after the simultaneous ...
Energy Technology Data Exchange (ETDEWEB)
A series of experiments have been conducted on AISI 5140 low alloy steel using a hollow cathode discharge-assisted plasma nitriding apparatus with the aim of elucidating the role of substrate bias voltages in plasma nitriding process. For comparison, some samples were nitrided with applied substrate bias (-50 V) while other samples were nitrided at floating potential. Treatments were carried out in NH{sub 3} atmosphere of 150 Pa at temperatures ranging from 450 {sup o}C to 550 {sup o}C for 2 h, 4 h, and 6 h. The nitrided samples were characterized by optical microscopy, X-ray diffraction and micro-hardness measurement. The corrosion behaviors were evaluated using anodic polarization tests in 3.5% NaCl solution. The results showed that the microstructure and phase constituents of the nitride layers were strongly influenced by the bias voltages. It was also ...
2010-05-14
International Nuclear Information System (INIS)
A series of experiments have been conducted on AISI 5140 low alloy steel using a hollow cathode discharge-assisted plasma nitriding apparatus with the aim of elucidating the role of substrate bias voltages in plasma nitriding process. For comparison, some samples were nitrided with applied substrate bias (-50 V) while other samples were nitrided at floating potential. Treatments were carried out in NH_3 atmosphere of 150 Pa at temperatures ranging from 450 "oC to 550 "oC for 2 h, 4 h, and 6 h. The nitrided samples were characterized by optical microscopy, X-ray diffraction and micro-hardness measurement. The corrosion behaviors were evaluated using anodic polarization tests in 3.5% NaCl solution. The results showed that the microstructure and phase constituents of the nitride layers were strongly influenced by the bias voltages. It was also demonstrated that the ...
2010-05-14
Energy Technology Data Exchange (ETDEWEB)
Gas nitridation has shown excellent promise to form dense, electrically conductive and corrosion-resistant Cr-nitride surface layers on Ni-Cr base alloys for use as proton exchange membrane fuel cell (PEMFC) bipolar plates. Due to the high cost of nickel, Fe-base bipolar plate alloys are needed to meet the cost targets for many PEMFC applications. Unfortunately, nitridation of Fe-base stainless steel alloys typically leads to internal Cr-nitride precipitation rather than the desired protective surface nitride layer formation, due to the high permeability of nitrogen in these alloys. This paper reports the finding that it is possible to form a continuous, protective Cr-nitride (CrN and Cr{sub 2}N) surface layer through nitridation of Fe-base stainless steel alloys. The key to form a protective Cr-nitride surface layer was ...
2007-01-01
Energy Technology Data Exchange (ETDEWEB)
Gas nitridation has shown excellent promise to form dense, electrically conductive and corrosion-resistant Cr-nitride surface layers on Ni-Cr base alloys for use as proton exchange membrane fuel cell (PEMFC) bipolar plates. Due to the high cost of nickel, Fe-base bipolar plate alloys are needed to meet the cost targets for many PEMFC applications. Unfortunately, nitridation of Fe-base stainless steel alloys typically leads to internal Cr-nitride precipitation rather than the desired protective surface nitride layer formation, due to the high permeability of nitrogen in these alloys. This paper reports the finding that it is possible to form a continuous, protective Cr-nitride (CrN and Cr{sub 2}N) surface layer through nitridation of Fe-base stainless steel alloys. The key to form a protective Cr-nitride surface layer was ...
2007-11-22
Hydrogen permeability in a plasma nitrided API X52 steel
Energy Technology Data Exchange (ETDEWEB)
A number of properties in steel components are detrimentally influenced when exposed to hydrogen environments. Under these conditions, atomic hydrogen is adsorbed on the steel surface, then absorbed and preferentially transported towards tri-dimensional stressed regions in the crystal lattice and into defects such as interfaces or dislocations. The hydrogen embrittlement susceptibility is strongly influenced by various microstructural parameters including the type of inclusions, steel composition and heat treating conditions. One of the alternatives employed in minimizing hydrogen embrittlement is the use of surface barriers for hydrogen permeation. In particular, the presence of surface nitride layers in steels can be considered as an effective barrier. Nitride steel surface layers can be produced by plasma nitriding with the concomitant benefits of improved surface hardness, as well as superior wear and fatigue ...
2003-07-01
Synthesis of nanoporous carbon as a gas adsorbent by reverse replication process of silica template
Energy Technology Data Exchange (ETDEWEB)
Porous carbon with high surface area and pore volume was prepared by a reverse replication process and its toluene equilibrium adsorption behavior was investigated. The preparation process of the porous carbon was composed of following sub-processes in series: synthesis and template preparation of silica gel, impregnation and polymerization of DVB monomer in silica template, carbonization of DVB polymer in a silica-polymer composite, and HF-assisted selective etching of silica in carbon-silica composite, The prepared porous carbon was nano porous and had ultrahigh specific surface area (2007 m{sup 2}/g) and large pore volume (3.07cm{sup 3}/g). The nanoporous carbon showed rapid toluene adsorption rate and good toluene adsorption capacity, compared with a commercial Y-type zeolite, In the present study, a reverse replication process to prepare nanoporous carbons will be introduced and its application potential as a gas adsorbent will be ...
2003-06-01
International Nuclear Information System (INIS)
When liquids are confined in nano-scopic dimensions, their properties differ from the corresponding bulk liquid, due to their reduced dimensionality and surface effects. Phase transition temperatures and pressures are often shifted from the bulk values and new phases can appear due to the strong interactions of the molecules with the confining walls. We have studied the structural and dynamical properties of aromatic liquids such as benzene, toluene, and ortho-terphenyl confined in nano-porous materials, MCM-41 and SBA-15, synthesized and characterized in our laboratory. A non-trivial dependence of the glass transition temperature, Tg, on the pore size and surface treatment of nano-porous materials is confirmed and interpreted as resulting from a competition between the fluid-wall and fluid-fluid intermolecular interactions. An increase of Tg is observed for small pore sizes and attractive surface while Tg decreases for non attractive surface, ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
A single particle micro-electrode technique has been applied, to study adsorption and mass transport phenomena of a TEABF{sub 4}/acetonitrile solution in a nano-porous carbon. The nano-porous carbon, which is obtained from SiC, has a very small and narrow pore size distribution around 8 Angstrom. Therefore, it is a good model material for studying adsorption processes in micropores. The results from cyclic voltammetry showed that a higher specific capacitance was obtained in the positive potential interval (vs Ag/AgNO{sub 3}). Upon activation cycling the mass transport inside the nano-porous particle becomes drastically hindered, probably by TEA{sup +} that is adsorbed and is partially blocking the micropores. Effective diffusion coefficients, Deff, were determined from potential step experiments. At positive potentials Deff was 1.5 {+-} 0.5 x 10{sup -8} cm{sup 2}s{sup -1}, whereas at more negative potentials Deff decreased ...
2004-07-01
The rapid nitriding of Al alloys with the controlling of plasma power density and pretreatments
Energy Technology Data Exchange (ETDEWEB)
The properties of AlN make this material very attractive for optical, electronic, and tribological application. Also, if the AlN could be formed on the Al surface to enhance its surface properties, Al could be applied for the lightening of machine parts. However, a dense oxide film exists on the surface of Al, which prevents the formation of the Al nitride even during plasma nitriding and plasma coating process. In this study, plasma nitriding has been tried to form an AlN layer on Al after the surface activation processes. During the plasma nitriding, the density of the nitrogen ions was amplified by means of controlling the power of the Al substrates. The film thickness, microstructural features and the mechanical properties such as hardness and wear properties of the AlN layer were examined as a function of the process parameters of pretreatment and plasma nitriding
2010-05-15
Properties of hot-pressed Fe sintered materials by plasma nitriding
Energy Technology Data Exchange (ETDEWEB)
This study was the analyse the relationship between properties of ion nitrided Fe sintered material and parameters of plasma nitriding process. Pure fe sintered materials (relative density : 92%) were fabricated by hot-pressing and nitrided under pulsed DC plasma for 4 hours. The large number of parameters in plasma diffusion treatment allows close control of the process so that surface layers with defined microstructures and properties can be obtained. The number of micropores in nitriding layer can be reduced in pulsed DC plasma by reducing the plasma power and by varying the gas mixture. The phase constitution of compound layer of nitrided Fe sintered material were influenced by gas mixture (N{sub 2} : H{sub 2}) and pulsed ratio (pulse on/off time ratio)
2002-05-01
Properties of hot-pressed Fe sintered materials by plasma nitriding
International Nuclear Information System (INIS)
This study was the analyse the relationship between properties of ion nitrided Fe sintered material and parameters of plasma nitriding process. Pure fe sintered materials (relative density : 92%) were fabricated by hot-pressing and nitrided under pulsed DC plasma for 4 hours. The large number of parameters in plasma diffusion treatment allows close control of the process so that surface layers with defined microstructures and properties can be obtained. The number of micropores in nitriding layer can be reduced in pulsed DC plasma by reducing the plasma power and by varying the gas mixture. The phase constitution of compound layer of nitrided Fe sintered material were influenced by gas mixture (N_2 : H_2) and pulsed ratio (pulse on/off time ratio).
2002-05-01
Energy Technology Data Exchange (ETDEWEB)
Samples of austenitic stainless steel AISI 316 were nitrided using the cathodic cage technique with the addition of methane in the nitriding atmosphere. The aim was to study the influence of this technique in reducing the precipitation of chromium nitrite and in improving the wear resistance. The results show that there was a significant improvement in such properties when compared to the results of ionic plasma nitriding. Formation of a double layer, one more internal composed of carbon and another with high nitrogen content, was confirmed by Scanning Electron Microscopy (SEM). The microhardness profile of the layer showed an increase in hardness values and a larger uniformity, while X-ray analysis showed less chromium nitriding precipitation when compared with results obtained for samples treated using ionic plasma nitriding.
2008-07-25
International Science & Technology Center (ISTC)
The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.
Structural design at the polymer surface interface in nanoporous silica polyamine composites
British Library Electronic Table of Contents (United Kingdom)
The factors affecting the rate of silica leaching in alkaline aqueous media from surface silanized, nanoporous, amorphous, silica gels and from silanized silica gels that have been modified with polyamines to form the previously reported silica polyamine composites (SPCs), BP-1 and BP-2 have been investigated. Silanization with alkyl trichlorosilanes slows the rate of silica leaching relative to the unmodified silica gels. The use of bulkier aryl silanes somewhat decreases the silica leaching under the same conditions. Interestingly, after modification of the silanized silica with poly(allylamine) (PAA) to make BP-1, the leaching increases, but subsequent modification of the SPC with chloroacetic acid to make BP-2, quenches this increase. A mechanism explaining these results is discussed. ...
2011-01-01
Simple chemical method for nanoporous network of In2S3 platelets for buffer layer in CIS solar cells
British Library Electronic Table of Contents (United Kingdom)
Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic b-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84eV for indium sulfide platelets. Ph...
2008-01-01
Numerical results on the translocation of long biopolymers through mid-sized and wide pores are presented. The simulations are based on a novel methodology which couples molecular motion to a mesoscopic fluid solvent. Thousands of events of long polymers (up to 8000 monomers) are monitored as they pass through nanopores. Comparison between the different pore sizes shows that wide pores can host a larger number of multiple biopolymer segments, as compared to smaller pores. The simulations provide clear evidence of folding quantization in the translocation process as the biopolymers undertake multi-folded configurations, characterized by a well-defined integer number of folds. Accordingly, the translocation time is no longer represented by a single-exponent power law dependence on the length, as it is the case for single-file translocation through narrow pores. The folding quantization increases with the biopolymer length, while the rate of translocated beads at each ...
2009-01-01
International Nuclear Information System (INIS)
The structure of nano-porous carbon, obtained by means of chlorination of carbide compounds with various crystal structure (SiC, TiC, Mo_2C) is studied through the method of small-angle diffraction. The angular dependences of the scattering intensity obtained are interpreted as the result of scattering from the nanoparticles of different size. The functions of the scattering particles distribution by the m(R_g) inertia radii are determined. It is shown that in spite of the source carbide, the highest fraction of the volume in the porous carbon constitute the particles with R_g #approx# 5 A. The nanoparticles in the samples obtained from SiC, wherein the average value of the R_g"a"v < 6 A, are most uniform by size. The nanoparticles in the porous carbon, obtained from Mo_2C, are on the average by two times larger
1999-08-01
Energy Technology Data Exchange (ETDEWEB)
This work was initiated to examine the effect of frequency and treatment temperature on the formation of nitrided layers and surface characteristics during plasma nitriding. Plasma nitriding experiments were performed with 316L austenitic stainless steel at the temperatures 400 .deg. C and 500 deg. C using a pulsed d.c. plasma with various frequencies in an atmosphere of N{sub 2}-H{sub 2} gas mixture. The microstructure and thickness of the nitrided layer and morphology of the nitrided surface were investigated using OM, SEM, XRD, EDS and AFM. XRD patterns revealed that the surface layer formed at 400 deg. C consisted of S phase only and CrN+Fe{sub 4}N nitrides at 500 .deg. C and no change of phase composition with frequency was observed. The compound layer thickened slightly with increased frequency. Also, the surface roughness increased as the frequency of the ...
1999-04-01
Plasma nitriding of austenitic stainless steel in N_2 and N_2/H_2 gas admixture
International Nuclear Information System (INIS)
Plasma nitriding in glow discharge is a process of modifying surface properties of a material by which surface hardness, corrosion resistance, fatigue strength etc. of a material can be improved
2004-09-01
International Nuclear Information System (INIS)
Aluminium nitride (AlN) is a very interesting ceramic because of its combination of properties such as high thermal stability, high hardness and an unusual combination of high thermal and low electrical conductivity. But it is very difficulty to obtain an AlN layer on the aluminium substrates by thermochemical nitriding process. Since a thin film of aluminium oxide existing on the surface of every aluminium substrate prevents the nitrogen atoms from diffusing into the aluminium lattice. However, it is possible to sputter the oxide film away from the aluminium surface in a glow discharge with the use of plasma nitriding technique and to allow the formation of AlN layer on the aluminium bulk. In the present work specimen of aluminium Al 99.5 has been plasma nitrided in a modified plasma nitriding unit, in which a diffusion pump was used to obtain an especially low partial pressure of ...
International Nuclear Information System (INIS)
This paper describes a system for fast mass spectrometric characterization of high-temperature outgassing measurements and measuring the total quantity of gas evolved for boron nitride. 2 references, 1 figure, 2 tables.
Hydrogen behavior in the iron surface layer modified by plasma nitriding and ion boronising
Energy Technology Data Exchange (ETDEWEB)
The effects of the plasma nitriding with the formation of compound nitride and diffusion zones and of the boronising with the different ion doses on hydrogen distribution and hydrogen induced deterioration of a surface layer were examined in the case of Armco iron. Electrochemical studies of hydrogen permeation rate, hydrogen vacuum extraction measurements, optical and scanning microscopy, X-ray diffraction and elastic recoil detection analysis (ERDA) were used. Accumulation of entering hydrogen within the various constituent zones of the modified layer inhibits the hydrogen transport into the metal and thus, decreases the mean hydrogen content in the deeper zones and in the core. Hydrogen accumulation within the compact nitride zone causes the expansion of the nitride lattice, nitride phase transformation and deterioration. The ion boronising enhances the hydrogen effects in the ...
2000-12-01
RF plasma nitriding of severely deformed iron-based alloys
Energy Technology Data Exchange (ETDEWEB)
The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10{sup -5} bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of {epsilon} and {gamma}' nitrides in the compound ...
2003-05-15
Plasma nitriding of low alloy steels at floating and cathodic potentials
International Nuclear Information System (INIS)
The low alloy steels were nitrided in the plasma atmosphere generated by using hollow cathode discharge. For comparison, specimens of 40 Cr steel were in two different potential states. One kind is isolated from cathode and anode between them the discharge was created. The other kind is placed on the plate which is connected to the cathode. The nitriding was carried out at different temperatures. The surface morphology, phase of compound layers and microhardness profiles were analyzed. The optical microscopy observation and X-ray diffraction showed that the compound layers were formed in all experiments. The results of the nitriding treatment are weakly dependent on the potentials applied on the specimens.
2008-08-15
Ion-plasma nitriding of the alloyed steel using a low pressure arc plasma generator
International Nuclear Information System (INIS)
A study is made into microhardness and structure of coatings on various system steels (37G2S, 25Kh5M, R6M5), obtained by ion nitriding in a low pressure (10"-"1 Pa) arc discharge plasma. A comparison of properties is accomplished for steels nitrided in an arc gas discharge and in a furnace. It is stated that ion-plasma nitriding in an arc gas plasma generator is an efficient method of alloy steels hardening which allows changing the structure and increasing the hardness of a surface layer up to rather great depth
2006-12-01
The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be successful in preventing metallurgical interdiffusion, they may ...
1988-01-01
Solid/liquid lubrication of ceramics at elevated temperatures
Energy Technology Data Exchange (ETDEWEB)
This study investigates the effect of solid and liquid lubrication on friction and wear performance of silicon nitride (Si{sub 3}N{sub 4}) and cast iron. The solid lubricant was a thin silver film ({approx}2 {mu}m thick) produced on Si{sub 3}N{sub 4} by ion-beam-assisted deposition. A high-temperature polyol-ester-base synthetic oil served as the liquid lubricant. Friction and wear tests were performed with pin-on-disk and oscillating-slider wear test machines at temperatures up to 300{degrees}C. Without the silver films, the friction coefficients of Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} test pairs were 0.05 to 0.14, and the average wear rates of Si{sub 3}N{sub 4} pins were {approx}5 x 10{sup -8} mm{sup 3} N{sup -1}. The friction coefficients of Si{sub 3}N{sub 4}/cast iron test pairs ranged from 0.08 to 0.11, depending on test temperature. The average specific wear rates of cast iron pins were {approx}3 x 10{sup -7} mm{sup 3} N{sup -1} m{sup -1}. ...
1996-04-01
Energy Technology Data Exchange (ETDEWEB)
To heighten durability and safety of materials/parts for undersea oil drilling, the development of ceramic base materials was made by developing function harmony type process technology which harmonizes on a high grade contrary characteristics and various functions. The paper summed up the fiscal 1997 results. In the design of system formation, computational simulation technology was developed to the composite process and the diploid system. The development of multifunction simultaneous manifestation materials was trially made by the higher nano structure process. A study was made of control of microstructures of porous materials and matrix filling by the gas phase precipitation control. Proposed were selective control of grain growth from species crystals and the columnar particle orientation laminated structure of simultaneous manifestation of strength and toughness. By composite precipitation reaction control, studied were simultaneous dispersion of whisker and increase in density ...
1998-03-01
Energy Technology Data Exchange (ETDEWEB)
Correlation between mechanical stress and hydrogen effects on radiation damage in polycide-gate MOS capacitors was investigated as a function of gate-oxide thickness. The compressive stress magnitude was altered by varying the silicide (TiSi/sub 2/ or WSi/sub 2/) thickness in the polycide-gate electrode, and hydrogen introduction into gate-SiO/sub 2/ film was carried out by diffusion from plasma-deposited silicon-nitride passivation film (SiN-Cap). In a MOS capacitor without passivation film (No-Cap sample), it was found that compressive stress on gate-SiO/sub 2/ reduces both positive charge build-up (..delta..Qot) and interface-trap generation (..delta..Dit). Radiation induced shift, ..delta..Qot exhibits a smaller stress effect as compared with ..delta..Dit. As gate-SiO/sub 2/ thickness decreases, the stress effect on ..delta..Qot increases, while this effect on ..delta..Dit remains nearly constant. This compressive stress effect was inhibited by hydrogen ...
1987-12-01
A bistable snapping microactuator and its mechanical analysis
Energy Technology Data Exchange (ETDEWEB)
A bistable, micromechanical switching device and its buckling stability, heat transfer, and dynamics analyses are summarized. A SEM picture of the device. The buckling element of the microactuator is a U-shaped cantilever ({open_quotes}buckled cantilever{close_quotes} in the picture) consisting of two 0.8 micron-thick polysilicon layers with 0.5 micron-thick oxide insulator sandwiched between them. The 82 micron-long cantilever is buckled by the {open_quotes}tension band{close_quotes} made of 0.5 micron-thick silicon nitride. The snapping action of the microactuator to the down-state (or up-state) is achieved by heating the upper (or lower) polysilicon layer of the buckling cantilever with electric current. Analysis of a snapping action between two buckled states is described. It provides a design framework as well as operation guidelines for the actuator. The buckling stability criterion and the deflection of the buckled cantilever are ...
1995-12-31
Plasma surface engineering of low alloy steel
Energy Technology Data Exchange (ETDEWEB)
The surface of low alloy steel (En40B) has been engineered in the plasma of a glow discharge via plasma nitriding and ion plating of titanium nitride (TiN) coatings on the nitrided substrates with the purpose of enhancing the surface properties and fatigue strength. The nitriding response of the steel has been accessed by the evaluation of phase composition, layer thickness, hardness profile, residual stresses and nitrogen and carbon distributions. The wear and fatigue characteristics of the plasma-nitrided steel have been investigated and simple models have been developed to describe the influence of such properties as depth and strength of the nitrided case on the fatigue limit and load-bearing capacity of the nitrided steel. In order to further improve the tribological properties and load-bearing capacity of the low alloy steel, a duplex ...
1991-07-07
Plasma nitriding of Sm[sub 2]Fe[sub 17
Energy Technology Data Exchange (ETDEWEB)
An intermetallic compound Sm[sub 2]Fe[sub 17]N[sub x] was synthesized by plasma nitriding of Sm[sub 2]Fe[sub 17] in a stream of N[sub 2]-H[sub 2] mixed gas. The reaction proceeded at a lower temperature (around 423 K) than that of the conventional thermal technique, but not at room temperature. This is discussed on the basis of the difference between the reaction mechanisms of plasma and thermal nitridings. (orig.)
1993-03-15
Plasma nitriding improvements of fatigue properties of nodular cast iron crankshafts
Energy Technology Data Exchange (ETDEWEB)
Crankshafts of the pearlitic-sorbitic nodular cast iron type JUS NL.80 (similar to DIN GGG-80) heat treated to get a tensile strength of 820-900 GPa (i.e. a Vickers hardness of 268-295 HV) were plasma and ammonia gas nitrided. The glow discharge plasma nitriding was performed for 20 h at about 500degC in a gas mixture of 55% N{sub 2} and 45% H{sub 2}. The gas nitriding was performed for 28 h at 510degC in the ammonia gas. Evaluation of the nitrided surfaces was conducted by optical microscopy, X-ray diffractometry and microhardness measurements. Journal and crank pin dimensions and surface roughness were measured both before and after nitriding. Bending fatigue testing of crankshafts was performed using a fatigue testing rig. The fatigue limit was evaluated at 5.0x10{sup 6} cycles. The fractures happened at the transition radius of the journal with cracks starting beneath the ...
1991-07-07
Characterization of TiN coatings deposited on plasma nitrided tool steel surfaces
Energy Technology Data Exchange (ETDEWEB)
Wear-resistant TiN coatings deposited on tool steels are used frequently in industry. There is a trend towards further optimizing these coatings, e.g. by plasma nitriding the tool surface prior to TiN deposition. In this work the influence of the nitriding conditions on the surface properties of AISI 304 and ASP 23 tool steels was investigated. The plasma nitriding was carried out in a triode ion plating configuration normally used to deposit TiN coatings. At the surface of AISI 304 stainless steel, only a thin compound layer (Fe{sub 4}N, Fe{sub 3}N) was found, probably as a consequence of the rather slow nitrogen diffusion in the austenite matrix. For ASP 23 high speed steel, the different nitriding behaviour of the martensitic matrix causes the formation of a diffusion layer which results in an increase in hardness at the surface. On an analogous set of specimens the TiN deposition was started ...
1991-07-07
Carbon nitride film deposition by active screen plasma nitriding
British Library Electronic Table of Contents (United Kingdom)
Deposition of CN-based films by a novel version of active screen plasma nitriding, aiming at surface modification of polymers, is reported. The approach relies on the use of pure graphite as the grid material, which was found to act both as an active screen and as a dry source of carbon atoms for the synthesis of thin films consisting mainly of a stoichiometric CN layer with columnar-type structure and dome-like nanostructured morphology.
2011-01-01
Ion-Track Membranes and Their Use in Biological and Medical Applications
International Nuclear Information System (INIS)
This report is a brief review of biological and medical applications of ion-track membranes. The review aims at informing nuclear physicists about alternative (i.e. non-fundamental-science) use of heavy ion accelerators such as production of micro- and nano-porous materials. The ion-track membranes produced this way are employed in life sciences and numerous technological applications. The author focuses on recent results from the Flerov laboratory in co-operation with other scientific institutions and industrial partners.
2007-05-22
Energy Technology Data Exchange (ETDEWEB)
Stainless steels can be nitrided at temperatures {<=}400 C to increase their hardness and wear resistance without a decreasing of their excellent corrosion resistance. Structure and properties of the surface layers produced by plasma nitriding and plasma immersion ion implantation in this temperature range were tested. There are negligible differences in the structure of the produced surface layers in spite of different interaction principles of the used technologies. However there are clear differences between the case of different steels. The case of ferritic chromium steels mainly consists of {epsilon}-nitride. Whereas the cases of austenitic and ferritic austenitic steels are characterized by expanded austenite. The corrosion resistance of the steels is reduced by nitriding only, if evident CrN-formation occurs. (orig.) 11 refs.
1999-08-01
Plasma nitriding of AISI 304 steel
International Nuclear Information System (INIS)
In the present investigation, the properties of plasma nitrided AISI 304 steel were studied by changing the presence of nitrogen in the gas mixture. The plasma nitriding was performed at temperature -560 deg C, pressure -4 mbar and duration 24 hours. The nitrided samples were characterized by evaluating the phase composition, micro hardness, and diffusion layer thickness. The phase analysis indicates the mixed phases of CrN and Fe_3N, Fe_3N and Fe_4N which has the highest intensity. The results show the glow discharge plasma nitriding in presence of N_2 (80 vol. %) and H_2 (rest) produced higher hardness as well as higher case depth. (author)
2004-09-01
Energy Technology Data Exchange (ETDEWEB)
With the aim of optimizing the nitriding process, experimental studies of the plasma nitriding of four selected steels were carried out, using a d.c. glow discharge. The process parameters were varied systematically. By means of transmission and scanning electron microscopy and X-ray diffraction, the microstructures, including the thicknesses of the compound zones and the diffusion zones of the nitrided steels, were obtained. Using cross-sectional samples and a micro-Vickers indenter, hardness depth profiles were also obtained. From the time and temperature dependences of the hardness profiles, effective diffusion constants and corresponding activation enthalpies were obtained. Furthermore, in an attempt to shed some light on the atomistic nitriding mechanisms, the glow discharges were studied by measuring energy spectra of the energetic ions hitting the cathode (the steel test specimens). It was shown ...
2000-02-01
Investigation of light elements in nitrided steel using elastic backscattering analysis
International Nuclear Information System (INIS)
This work describes the ability of ion beam analysis techniques IBA to simultaneously determine the concentration and the possible depth profile of some light elements, such as carbon, oxygen and nitrogen, in matrices of high atomic number Z, such as stainless steel materials. In fact, the nitriding process of some materials has the potential to improve their tribological and mechanical properties and to offer various advantages as compared with other methods used in the modification of surfaces. Gas and Plasma nitriding were applied to certain types of steel, such as AISI-304 and H-13 which are commonly used in the industry, in order to improve their hardness and their surface corrosion resistance. The improvement was correlated with the depth profile of N and the consequent structure variations. More specifically, non-Rutherford elastic backscattering (alpha, alpha) at 5 MeV was performed on different samples, before and after ...
2006-08-01
Growth of Cr-Nitrides on commercial Ni-Cr and Fe-Cr base alloys to protect PEMFC bipolar plates
British Library Electronic Table of Contents (United Kingdom)
Nitridation of Cr-bearing alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant CrN or Cr2N base surfaces of interest for a range of electrochemical devices, including fuel cells, batteries, and sensors. This paper presents results of exploratory studies of the nitridation of commercially available, high Cr (30-35wt%) Ni-Cr alloys and a ferritic high Cr (29wt%) stainless steel for proton exchange membrane fuel cell (PEMFC) bipolar plates. A high degree of corrosion resistance in sulfuric acid solutions designed to simulate bipolar plate conditions and low ICR values were achieved. Oxygen impurities in the nitriding environment were observed to play a significant role in the nitrided surface structures that formed, with detrimental effect...
2007-01-01
Effect on substrate-film adherence of TiN film enhanced plasma nitriding
International Nuclear Information System (INIS)
The combined process of low temperature plasma nitriding and TiN film deposition was realized on the plasma-assisted vacuum arc plating set. The process of plasma nitriding can be done below 200 degree C. The low temperature plasma nitriding and TiN film deposition was realized on the same device. By the SEM analysis of the plating structure, low hardness grads from the substrate to the film was obtained, and it was found that the mixed nitride plating formed at the interface between the substrate and the film. The quantitative measurement of substrate-film adherence showed that the adherence was improved notably by using the process. The adherence between film and substrate can reach to 59.6 MPa without the bias voltage supplying
2002-01-01
Characterization and Wear Behavior of Plasma Nitrided Nickel Based Dental Alloy
British Library Electronic Table of Contents (United Kingdom)
In the present work, the plasma nitriding behavior of a nickel based dental alloy was investigated. Plasma nitriding experiments carried out under constant gas mixture (15% H2?85% N2) for different process parameters including time (4, 6, 10, and 20?h) and temperature (400, 450, 500, and 550??C). Depending on nitriding parameters, it was found that triple or double layers formed on the surface of the samples. Increasing of treatment time and temperature has resulted in a double layer. ?N1 layer was in formed all nitrided samples. However, ?N2 layer is formed only at low temperatures and in short times. Layer growth of nickel based alloys increases until a critical time or a critical temperature reached. Above these critical values, it is observed that the layer thickness decreases. It was ...
2011-01-01
Saddle field fast atom beam source: A new low pressure plasma nitriding method for a alloy Ti-6Al-4V
Energy Technology Data Exchange (ETDEWEB)
Ti and its alloys (Ti-6Al-4V) have been used in different engineering applications due to their several outstanding properties. Nevertheless, their use in practical applications is limited in many cases due to their poor tribological property. Researches are ongoing on surface modification of Ti based materials by different plasma and ion based techniques to overcome this problem. However, the conventional plasma nitriding techniques have several problems such as formation of an arc, increased possibility of surface contamination due to a comparatively higher operating pressure, production of a very thin nitrided layer after a long processing time, etc. In this present work, the possibility of a new low-pressure plasma nitriding process using a Plasma Enhanced Chemical Vapor Deposition (PECVD) based saddle field fast atom beam source on a Ti-6Al-4V alloy sample is investigated. Plasma nitriding was ...
2006-09-25
Saddle field fast atom beam source: A new low pressure plasma nitriding method for a alloy Ti-6Al-4V
International Nuclear Information System (INIS)
Ti and its alloys (Ti-6Al-4V) have been used in different engineering applications due to their several outstanding properties. Nevertheless, their use in practical applications is limited in many cases due to their poor tribological property. Researches are ongoing on surface modification of Ti based materials by different plasma and ion based techniques to overcome this problem. However, the conventional plasma nitriding techniques have several problems such as formation of an arc, increased possibility of surface contamination due to a comparatively higher operating pressure, production of a very thin nitrided layer after a long processing time, etc. In this present work, the possibility of a new low-pressure plasma nitriding process using a Plasma Enhanced Chemical Vapor Deposition (PECVD) based saddle field fast atom beam source on a Ti-6Al-4V alloy sample is investigated. Plasma nitriding was ...
2006-09-25
Plasma nitriding of stainless steels at low temperatures
Energy Technology Data Exchange (ETDEWEB)
To avoid the drop in corrosion resistance of stainless steels in conventional nitriding (precipitation of CrN), low-temperature techniques like ion implantation, plasma immersion ion implantation (PIII, PI{sup 3}) and low-temperature plasma nitriding were developed. In this investigation, four stainless-steel grades (ferritic: X6Cr17, austenitic-ferritic: X2CrNiMoN22.5.3, austenitic: X8CrNiTi18.10 and X5CrNi18.10) were plasma-nitrided between 250 and 500 C. Nitrogen-enriched layers with a high nitrogen content were produced, leading to a significant increase in surface hardness. X-ray diffraction indicated that CrN did not precipitate if treatment temperatures did not exceed 400 C. 'Expanded austenite' formed in the austenitic and duplex steels and {epsilon}-nitride (Fe{sub 2}N{sub 1-x}) in the ferritic steel. The optically visible structure of the nitrided cases ...
1999-09-01
New developments in plasma nitriding: Outcomes of AINSE collaborations
International Nuclear Information System (INIS)
As a hardening process, the attractiveness of nitriding lies in its low treatment temperature. Although the thickness of the case is less than that obtained by higher temperature processes such as carburising, there are a range of alloys and applications for which nitriding is the only possible alternative. Indeed, there are some alloys and applications for which even the normal nitriding temperatures (between 500 deg C and 600 deg C for ferrous alloys) are too high. In this paper, we report on developments, specifically the use of low pressure plasmas and high energy ion bombardment, which can extend the benefits of nitriding to lower temperatures. In this poster, we will present results from these collaborative projects, concentrating on the nitriding of austenitic stainless steel at temperatures below 450 deg C. In this temperature range, the hardness and wear resistance of the ...
1998-12-02
Energy Technology Data Exchange (ETDEWEB)
Chromium electroplated AISI 316L stainless steel was nitrided using inductively coupled plasma (ICP) for application in the bipolar plate of a polymer electrolyte membrane fuel cell (PEMFC). A continuous and thin chromium nitride layer was formed at the surface of the samples after ICP nitriding for 2 h at 400 C. The interfacial contact resistance (ICR) and corrosion resistance in simulated PEMFC operating conditions were higher than the required values, while they varied with the applied dc bias voltage during the nitriding process. The ICR value decreased with an increase in bias voltage. Potentiodynamic polarization measurements showed that all of the nitrided samples had excellent corrosion resistance with a current density of {proportional_to}10{sup -7} A cm{sup -2} at the cathode. It was also found that the oxygen content at the surface was not increased after the corrosion ...
2009-03-15
Improvement of the mechanical properties of austenitic stainless steel after plasma nitriding
Energy Technology Data Exchange (ETDEWEB)
In this paper, we report on a series of experiments designed to study the influence of plasma nitriding on the mechanical properties of austenitic stainless steel. Plasma nitriding experiments were conducted on AISI 304L steel in a temperature range of 375-475 C using pulsed-DC plasma with different N{sub 2}-H{sub 2} gas mixtures and treatment times. Firstly the formation and the microstructure of the modified layer will be highlighted followed by the results of hardness measurement, adhesion testing, wear resistance and fatigue life tests. The modified surface was analyzed directly after plasma nitriding as well as using a depth profiling method. The microhardness after plasma nitriding is increased up to 19 GPa, that is a factor of five higher compared to the untreated material (3.3 GPa). The adhesion is examined by Rockwell indentation and scratch test. No delamination of the treated layer could be ...
2000-11-01
Effects of DC plasma nitriding parameters on microstructure and properties of 304L stainless steel
International Nuclear Information System (INIS)
A wear-resistant nitrided layer was formed on a 304L austenitic stainless steel substrate by DC plasma nitriding. Effects of DC plasma nitriding parameters on the structural phases, micro-hardness and dry-sliding wear behavior of the nitrided layer were investigated by optical microscopy, X-ray diffraction, scanning electron microscopy, micro-hardness testing and ring-on-block wear testing. The results show that the highest surface hardness over a case depth of about 10 #mu#m is obtained after nitriding at 460 deg. C. XRD indicated a single expanded austenite phase and a single CrN nitride phase were formed at 350 deg. C and 480 deg. C, respectively. In addition, the S-phase layers formed on the samples provided the best dry-sliding wear resistance under the ring-on-block contact configuration test.
2009-03-01
Consistency Improvement of some steel types by plasma nitriding
International Nuclear Information System (INIS)
Plasma nitriding is a powerful technique for modifying the phase-structure of the material surface layers, which affect the mechanical, physical and chemical properties of material. The effect of plasma nitriding on the surface properties of three types of steel (low carbon, AISI-304 and H13 (hardened)) has been investigated. The steel samples were plasma nitrided in vacuum of 10"-"1Pa with gas mixture of (N_2, H_2) at 530 Centigrade degree for a duration of 14 hours. Vickers microhardness measurements and XRD phase analysis of the treated and untreated samples were carried out. The diffraction patterns of treated steels revealed that new phases of #gamma#-Fe_4N, #epsilon#-Fe_3N and (Fe,Cr)_2N were formed. The maximum treated depths were about 5, 6 and 45 #mu#m for low carbon, AISI-304 and H13 (hardened) nitrided steel respectively. The microhardness was increased by about 150%, 200% and 140% for low ...
2004-12-04
A study into effects of CO2 laser melting of nitrided Ti-6Al-4V alloy
Multiple treatment of engineering surfaces can provide improved surface properties that cannot be obtained by a single surface treatment. Consequently, this study investigates the effects of laser melting on the microstructures of plasma nitrided Ti-6Al-4V alloy. The study consists of two parts. In the first part, governing equations pertinent to the laser melting process are developed, and temperature variation across the melted zone is predicted. In the second, an experiment is conducted to nitride the surface of the alloy through plasma nitriding process and to melt the plasma nitrided and the untreated alloy surfaces with a CO2 laser beam. The resulting metallurgical changes are examined using x-ray diffraction (XRD), bdenergy-dispersive spectrometry (EDS), and scanning electron microscopy (SEM) techniques. It is shown that three distinct nitride layers are formed in the ...
1997-10-01
The Silicone Conundrum Part II: ?Low Outgassing? Silicones
British Library Electronic Table of Contents (United Kingdom)
Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.
2011-01-01
Silicon electrochemistry related to the formation of porous silicon
Energy Technology Data Exchange (ETDEWEB)
We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.
1988-01-01
International Nuclear Information System (INIS)
Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).
Self-organization of nickel atoms in silicon
British Library Electronic Table of Contents (United Kingdom)
We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.
2011-01-01
Tribological properties of plasma and pulse plasma nitrided AISI 4140 steel
Energy Technology Data Exchange (ETDEWEB)
Plasma nitriding is usually used for ferrous materials to improve their surface properties. Knowledge of the properties of thin surface layers is essential for designing engineering components with optimal wear performance. In our study, we investigated the microstructural, mechanical and tribological properties of plasma- and pulse plasma-nitrided AISI 4140 steel in comparison to hardened steel. The influence of nitriding case depth as well as the presence of a compound layer on its tribological behaviour was also examined. Plasma and pulse plasma nitriding were carried out using commercial nitriding processes. Nitrided samples were fully characterised, using metallographic, SEM microscopic, microhardness and profilometric techniques, before and after wear testing. Wear tests were performed on a pin-on-disc wear testing machine in which ...
1998-10-10
Energy Technology Data Exchange (ETDEWEB)
A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.
1981-01-01
Energy Technology Data Exchange (ETDEWEB)
A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.
1982-12-23
Mesoporous Silicon-Based Anodes for High Capacity, High - NASA
Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...
Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector
Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector
1993-01-01
Deep donor states of muonium in silicon and germanium (status report exp SC81)
Deep donor states of muonium in silicon and germanium (status report exp SC81)
1979-01-01
A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer
1991-01-01
Wear properties of steel plasma nitrided at high temperatures
Energy Technology Data Exchange (ETDEWEB)
The wear behaviour of 722M24 (En40B) steel plasma nitrided at high temperatures for long durations was investigated. Under dry sliding and abrasive-containing lubricated conditions, the wear characteristics of the steel were studied as a function of load, time and white layer thickness. The white layer and the wear debris were characterized by X-ray diffraction. The topography of the wear surface was examined in a scanning electron microscope. The plasma nitriding process was carried out using a 20 kW plasma processing unit in cracked ammonia atmosphere. Treatment times of up to 100 h were employed with temperatures of 550, 570 and 590 C. Wear tests were performed with plasma nitrided AMS 6472 as the counterface material. The tests under abrasive-containing lubricated conditions were carried out with 10% carborundum powder 10 [mu]m in size in SAE-30 machine oil. The wear resistance of the steel was improved by plasma ...
1993-08-30
Surface treatment of Ti-6Al-4V alloy by rf plasma nitriding
Energy Technology Data Exchange (ETDEWEB)
The Ti-6Al-4V alloy was treated by inductively coupled rf plasma nitriding. The effects of plasma-processing time in the range of 5-35 min on the microstructure and the mechanical properties of the plasma-nitrided Ti-6Al-4V samples were studied. The plasma power input was adjusted at 450 W and pure N{sub 2} gas was introduced to establish a treatment pressure of 8.0-8.4 x 10{sup -2} mbar. The characteristics of the nitrided layers have been investigated by microhardness testing, surface roughness measurements, optical microscopy, and x-ray diffraction. The results show that the surface microhardness increases as the plasma-processing time increases to reach 2000 HV0.1 at a plasma-processing time of 35 min. A high nitriding rate of 2.81 {mu}m{sup 2} s{sup -1} at a plasma-processing time of 25 min was achieved. The formation of the hard phases TiN, Ti{sub 2}N, and Ti(N) in the Ti-6Al-4V surfaces are found ...
2007-10-03
Surface treatment of Ti-6Al-4V alloy by rf plasma nitriding
International Nuclear Information System (INIS)
The Ti-6Al-4V alloy was treated by inductively coupled rf plasma nitriding. The effects of plasma-processing time in the range of 5-35 min on the microstructure and the mechanical properties of the plasma-nitrided Ti-6Al-4V samples were studied. The plasma power input was adjusted at 450 W and pure N_2 gas was introduced to establish a treatment pressure of 8.0-8.4 x 10"-"2 mbar. The characteristics of the nitrided layers have been investigated by microhardness testing, surface roughness measurements, optical microscopy, and x-ray diffraction. The results show that the surface microhardness increases as the plasma-processing time increases to reach 2000 HV0.1 at a plasma-processing time of 35 min. A high nitriding rate of 2.81 #mu#m"2 s"-"1 at a plasma-processing time of 25 min was achieved. The formation of the hard phases TiN, Ti_2N, and Ti(N) in the Ti-6Al-4V surfaces are found to be the reason for ...
2007-10-03
Pulsed-plasma nitriding of a niobium-alloyed PM tool steel
Energy Technology Data Exchange (ETDEWEB)
The aim of this work is to describe the processes during plasma nitriding of Nb-containing, powder metallurgy prepared (PM) tool steel. PM steel was studied containing 2.5% C, 3.3% Si, 6.2% Cr, 2.2% Mo, 2.6% V, 2.6% Nb and 1.0% W, produced by melt atomization and hot isostatic pressing. The hardened and tempered steel was plasma nitrided at temperatures ranging from 470 to 530 deg. C. The nitriding time was 30-180 min. Optical microscopy, electron microscopy, XRD, EDS, WDS and hardness measurements were used to study the steel's properties, microstructure, phases and chemical composition. The nitriding temperature of 470 deg. C was found to be unsuitable for practical use because the layers prepared at this temperature were non-uniform. The compound layer formed by M{sub 2,3}(C,N) and M{sub 4}N was found after nitriding at temperatures of 500 and 530 deg. C for at least 60 ...
2005-02-25
Pulsed-plasma nitriding of a niobium-alloyed PM tool steel
International Nuclear Information System (INIS)
The aim of this work is to describe the processes during plasma nitriding of Nb-containing, powder metallurgy prepared (PM) tool steel. PM steel was studied containing 2.5% C, 3.3% Si, 6.2% Cr, 2.2% Mo, 2.6% V, 2.6% Nb and 1.0% W, produced by melt atomization and hot isostatic pressing. The hardened and tempered steel was plasma nitrided at temperatures ranging from 470 to 530 deg. C. The nitriding time was 30-180 min. Optical microscopy, electron microscopy, XRD, EDS, WDS and hardness measurements were used to study the steel's properties, microstructure, phases and chemical composition. The nitriding temperature of 470 deg. C was found to be unsuitable for practical use because the layers prepared at this temperature were non-uniform. The compound layer formed by M_2_,_3(C,N) and M_4N was found after nitriding at temperatures of 500 and 530 deg. C for at least 60 min. The effect ...
2005-02-25
Plasma nitriding of Ti and Ti-Al coatings
Energy Technology Data Exchange (ETDEWEB)
The Ti and Ti-Al coatings were deposited onto hot-worked AISI H11 steel substrates and plasma nitrided at 900 C. The Ti coated samples were successfully nitrided, while cracking and delamination of the Ti-Al coating was observed during nitriding. The formation of [delta]-TiN and [epsilon]-Ti[sub 2]N phases were detected after plasma nitriding of the Ti coating. During plasma treatment of the Ti-Al coating, the initial Ti[sub 3]Al and Al phases were paartially transformed into TiAl phase. The martensite transformation of the substrate material was found. The as-deposited Ti coating has a fibrous structure, while the structure of the as-sputtered Ti-Al coating is columnar. The superficial Vickers microhardness of plasma-nitrided Ti coating was 2200 HV 0.03 and the critical load of higher than 50 N indicates very good coating-to-substrate adhesion. (orig.)
1993-12-03
Passivation of Cu by sputter-deposited Ta and reactively sputter-deposited Ta-nitride layers
Energy Technology Data Exchange (ETDEWEB)
Sputter-deposited tantalum (Ta) and reactively sputter-deposited Ta-nitride films were studied with respect to the passivation capability against copper (Cu) oxidation in thermal O{sub 2} ambient. A 200 {angstrom} Ta or Ta-nitride film was sputter-deposited on a 2,000 {angstrom} Cu film using a Ta target in an Ar/N{sub 2} gas mixture. With Ta passivation, Cu was not oxidized at temperatures up to 400 C, which can be further improved by using passivation of an amorphous Ta-nitride film deposited in an appropriate condition. The absence of long-range defects in the Ta-nitride film was presumably responsible for this improvement. However, sputtering-induced surface damage by excess N{sub 2} in the sputter gas mixture may reduce the passivation capability of Ta-nitride films. When the passivated Cu was oxidized, the Cu oxides always resided in the top surface region. That is, in the ...
1998-09-01
Growth of Cr-Nitrides on Commercial Ni-Cr and Fe-Cr Base Alloys to Protect PEMFC Bipolar Plates
Energy Technology Data Exchange (ETDEWEB)
Nitridation of Cr-bearing alloys can yield low interfacial contact resistance (ICR), electrically- conductive and corrosion-resistant CrN or Cr2N base surfaces of interest for a range of electrochemical devices, including fuel cells, batteries, and sensors. This paper presents results of exploratory studies of the nitridation of two high Cr (30-35 wt%) commercially available Ni-Cr alloys and a ferritic high Cr (29 wt.%) stainless steel for proton exchange membrane fuel cell (PEMFC) bipolar plates. A high degree of corrosion resistance in sulfuric acid solutions designed to simulate bipolar plate conditions and low ICR values were achieved via nitridation. Oxygen impurities in the nitriding environment were observed to play a significant role in the nitrided surface structures that formed, with detrimental effects for the Ni-Cr base alloys, but beneficial effects for the stainless ...
2007-01-01
Generation of ammonia plasma using a helical antenna and nitridation of GaAs surface
International Nuclear Information System (INIS)
Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that ...
2003-05-15
Sheath characteristic in ECR plasma nitriding
International Nuclear Information System (INIS)
The sheath plasma characteristics changing with the negative bias applied to the substrate during electron cyclotron resonance plasma nitriding are studied. The sheath characteristics obtained by a Langmuir single probe and an ion energy analyzer show that when the negative bias applied to the substrate is increasing, the most probable energy of ions in the sheath and the full width of half maximum of ions energy distribution increase, the thickness of the sheath also increases, whereas the saturation current of ion decreases. It has been found from the optical emission spectrum that there are strong lines of N_2 and N_2"+. Based on the experiment results the mechanism of plasma nitriding is discussed
2001-04-01
Mechanical properties of titanium-niobium carbon nitride
Energy Technology Data Exchange (ETDEWEB)
A study was made of the variation in strength characteristics of group IV transition metal carbon nitrides alloyed with carbides or group V metal nitrides. A complex solid solution of titanium-niobium carbonitride was preliminarily synthesized to a homogeneous equilibrium state and then crushed. The calculated quantity of binder metal was added as elemental powders, the mixture was vibration ball milled in ethanol and the plasticized charge was used to press experimental specimens for mechanical testing. The studies showed that the high-temperature strength properties of the new cermet are superior to standard type KNT. The material is thus promising for use in the manufacture of tools. 8 references, 3 figures.
1984-07-01
Energy Technology Data Exchange (ETDEWEB)
Single-electrode transient behavior was measured mainly during the discharging process for a model cell of electric double layer capacitor with nano-porous carbon electrodes and reference electrode. Apparent conductivity in the cell, which we call `effective conductivity,` is determined with approximation of current in transient behavior to a one-dimensional electrophoretic model. A comparison of effective conductivity with conductivity of bulk solution suggests an interesting mechanism of transfer of electrolyte ions. The difference in transient behavior between various electrolyte ions was not conspicuous in spite of distinctive differences in conductivity of each bulk solution. The large pore diameter of the carbon electrode results in rapid transient behavior and such an electrode should be suitable for rapid charge and discharge. The effect of origin of carbon electrode is found to be significant to bring considerable differences in discharge rate. However, ...
1997-07-10
Energy Technology Data Exchange (ETDEWEB)
The single-electrode capacitance of a nano-porous carbon electrode used as an electric double layer capacitor was measured. The charged state of the electrolyte ion was discussed from the results. Single-electrode capacitance was not proportional to the specific surface area of the electrode. This implies that the whole surface of the electrode is not effective for the formation of an electric double layer. It is considered that edge orientation of the carbon structure would give a dominant contribution to capacitance. For measurements with aqueous solutions of various electrolytes, capacitance was about the same value for each salt compound. For aqueous acid solution, on the other hand, capacitance was twice to three times as large as that for salt compounds. This difference, however, became negligibly small if the concentration of electrolyte solution was lowered. Taking account of the hydrated ionic radius of each ion, it was considered that ions in salt ...
1997-07-10
Energy Technology Data Exchange (ETDEWEB)
For the purpose of digging up themes of the joint research which develop the R and D in the industrial technology field in Japan to a new stage, researchers were sent to the world representing research institutes to conduct the research survey of 'Nano-structured carbon and hydrogen absorption' and 'Development of the creation technology of nano-porous materials.' As to the former, an experiment on electrochemical hydrogen absorption of carbon materials including nanotubes was conducted by researchers dispatched, but the large absorption amount was not observed. As to the latter, visits were paid to Fraunhofer Institute and the related facilities in Germany, Princeton University, MIT, GIT and Naval Research Laboratories in the U.S., Orleans University in France, AO Research Institute (bone repair study) in Switzerland, Cambridge University and University of Bristol in the U.K., etc., and the research survey was made on the ...
2001-03-01
Helium ion implantation in SiAlON: Characterisation of cavity structures using TEM and IBA
International Nuclear Information System (INIS)
Highly swollen nanoporous layers produced in material surfaces by He implantation are of special interest for applications such as catalysis. Here we investigate whether nanoporous layers can be produced in the covalently bonded insulating ceramic, SiAlON. The retention of highly swollen porous structures in thinned TEM sections prepared from such hard brittle materials is particularly challenging. We have successfully prepared such sections both parallel to, and perpendicular to, the implanted surface. At intermediate doses the bubble structures are very similar to those found in metals. At high helium doses local swellings at depths around the mean projected range of the He ions (#approx#360 nm) are estimated to be well in excess of 200%. Bubble structures are stable under heating to temperatures up to 1200 deg. C. It is found that the highly cavitated layer is buried below a crystalline overlayer of compact SiAlON. This overlayer is ...
2000-05-02
Entropy driven spontaneous formation of highly porous films from polymer-nanoparticle composites
International Nuclear Information System (INIS)
Nanoporous materials have become indispensable in many fields ranging from photonics, catalysis and semiconductor processing to biosensor infrastructure. Rapid and energy efficient process fabrication of these materials is, however, nontrivial. In this communication, we describe a simple method for the rapid fabrication of these materials from colloidal dispersions of Polymethyl Silsesquioxane nanoparticles. Nanoparticle-polymer composites above the decomposition temperature of the polymer are examined and the entropic gain experienced by the nanoparticles in this rubric is harnessed to fabricate novel highly porous films composed of nanoparticles. Optically smooth, hydrophobic films with low refractive indices (as low as 1.048) and high surface areas (as high as 1325 m2 g-1) have been achieved with this approach. In this communication we address the behavior of such systems that are both temperature and substrate surface energy dependent. The method is applicable, ...
2009-10-21
Transmission electron microscopy study of plasma nitriding of electroplated chromium coating
Energy Technology Data Exchange (ETDEWEB)
In this paper, the influence of plasma nitriding at temperature 720 deg. C for 20 h on the surface microstructure and interface microstructure of electroplated chromium coating was investigated. In these conditions, interdiffusion, mixing and reaction phenomena of elements originating from the substrate and coating material are more likely to occur, thus increasing the bonding strength between the coating and carbon steel substrate. The change of the structures from the substrate side to the coating surface, and the effect of the substrate steel on the interface structure were studied by cross-sectional transmission electron microscope observation (XTEM). The nitride layer formed on the surface was analyzed by X-ray diffraction method (XRD). After treatment at above conditions a 6-7 {mu}m thick nitride compound layer was formed in surface region and the same thick carbide compound layer was also formed in the interface ...
2003-02-28
Transmission electron microscopy study of plasma nitriding of electroplated chromium coating
International Nuclear Information System (INIS)
In this paper, the influence of plasma nitriding at temperature 720 deg. C for 20 h on the surface microstructure and interface microstructure of electroplated chromium coating was investigated. In these conditions, interdiffusion, mixing and reaction phenomena of elements originating from the substrate and coating material are more likely to occur, thus increasing the bonding strength between the coating and carbon steel substrate. The change of the structures from the substrate side to the coating surface, and the effect of the substrate steel on the interface structure were studied by cross-sectional transmission electron microscope observation (XTEM). The nitride layer formed on the surface was analyzed by X-ray diffraction method (XRD). After treatment at above conditions a 6-7 #mu#m thick nitride compound layer was formed in surface region and the same thick carbide compound layer was also formed in the interface ...
2003-02-28
Surface modification of the pure iron by the pulse plasma nitriding: Application of a kinetic model
Energy Technology Data Exchange (ETDEWEB)
In this work, the pulse plasma nitriding process of pure iron is modelled using a kinetic model derived from the Fick's laws. This approach based on the error function model allows to simulate the growth kinetics of a biphase configuration consisting of {gamma}'-Fe{sub 4}N{sub 1-x} and {epsilon}-Fe{sub 2-3}N iron nitrides under specified conditions. By coupling the kinetics data about the diffusivities of nitrogen in {alpha}-Fe, {gamma}' and {epsilon} phases to the thermodynamic description of the Fe-N phase diagram, it is possible to evaluate the kinetic constant at each growing phase interface, the thickness of nitrided layer, and predict the nitrogen concentration profiles. The comparison between the experimental and theoretical results shows the reliability of the simulation results.
2007-07-25
Surface modification of the pure iron by the pulse plasma nitriding: Application of a kinetic model
International Nuclear Information System (INIS)
In this work, the pulse plasma nitriding process of pure iron is modelled using a kinetic model derived from the Fick's laws. This approach based on the error function model allows to simulate the growth kinetics of a biphase configuration consisting of #gamma#'-Fe_4N_1_-_x and #epsilon#-Fe_2_-_3N iron nitrides under specified conditions. By coupling the kinetics data about the diffusivities of nitrogen in #alpha#-Fe, #gamma#' and #epsilon# phases to the thermodynamic description of the Fe-N phase diagram, it is possible to evaluate the kinetic constant at each growing phase interface, the thickness of nitrided layer, and predict the nitrogen concentration profiles. The comparison between the experimental and theoretical results shows the reliability of the simulation results.
2007-07-25
Energy Technology Data Exchange (ETDEWEB)
Thin passive layers of uranium nitride were formed by nitriding pure metallic uranium in non-equilibrium, low pressure radio-frequency plasma of nitrogen. Plasma nitriding at low substrate temperature of 230 C-250 C was found to cause the formation of adherent layers of uranium sesquinitride ({alpha}-U{sub 2}N{sub 3}) which provide a considerable protection against hydrogen attack. The characteristics of these passivation layers were determined by X-ray diffraction and Auger electron spectroscopy. The incipient hydriding kinetics of the plasma-treated samples were compared with those of untreated and nitrogen-ion implantation ones, utilizing a hot-stage microscope that was monitored continuously with a TV camera and videotape. (orig.)
1996-07-01
New approaches to the synthesis of aromatic polyesters
British Library Electronic Table of Contents (United Kingdom)
A new method of the synthesis of high molecular polybutylene terephthalate (PBT) is developed with the use of Irganox 1010, tris(nonylphenyl) phosphite and hypophosphite as stabilizers and boron nitride or boron oxide as a catalyst is proposed.
2009-01-01
Mechanism of r. f. plasma nitriding of Ti-6Al-4V alloy
Energy Technology Data Exchange (ETDEWEB)
The objective of the current study was the gradual development of the formation of the nitride layer during inductive r.f. plasma nitriding. The study centers on characterization of refined layers and plasma diagnostics in the vicinity of the sample, and raises critical questions of how the layers and interfacial microstructure might affect the near-surface properties. The composition of the plasma near the surface of the sample (plasma layer) was examined by optical emission spectroscopy and mass spectrometry during plasma nitriding and while sputtering the sample after the nitriding process. It was observed that during the nitriding process, the plasma layer contains Ti, NH[sub n] species, N (or/and N[sup +]), H[sub n] species (or/and H[sup +][sub 2]). However, when the nitrided sample was exposed to argon plasma, Ti, Al and NH were observed. It was found that ...
1993-08-15
Improvement of the fatigue strength of AISI 4140 steel by an ion nitriding process
Energy Technology Data Exchange (ETDEWEB)
The influence of plasma nitriding on the fatigue behaviour of AISI 4140 low-alloy steel was investigated under varying process conditions of temperature (500-600 C), time (1-12 h), heat treatment before ion nitriding (quenched and tempered, normalized) and gas mixture (50% H{sub 2}-50% N{sub 2}). A rotating bending fatigue machine was used to determine the fatigue strength. It was found that the plasma nitriding improves the fatigue strength and increases the fatigue limit depending on the surface hardness of the case depth. The microstructure of surface and diffusion layers was examined by optical microscopy. The fracture surface of specimens and the origin of fatigue cracks were observed by scanning electron microscopy.
1995-06-01
Energy Technology Data Exchange (ETDEWEB)
Cold plasma nitriding treatment was performed to improve the corrosion resistance of C38 carbon steel. Nitriding process was conducted using a radiofrequency nitrogen plasma discharge for different times of treatment on non-heated substrates. The modification of the corrosion resistance characteristic of the C38 steel due to the treatment in acid medium (1 M HCl) were investigated by gravimetric and electrochemical tests such as potentiodynamic polarisation curves and electrochemical impedance spectroscopy (EIS). It was shown that the plasma nitriding treatment improves the corrosion resistance. Indeed, in the gravimetric tests, nitrided samples showed lower weight loss and lower corrosion rate in comparison to untreated one. In the Tafel polarisation tests, the nitrided samples showed greatly reduced corrosion current densities, anodic dissolution and also retarded the hydrogen ...
2009-03-01
Effects of various gas mixtures on plasma nitriding behavior of AISI 5140 steel
International Nuclear Information System (INIS)
AISI 5140 steel was plasma nitrided at various gas mixtures of nitrogen, hydrogen, and argon to investigate the actions of hydrogen and argon on plasma nitriding. The structural and mechanical properties of ion-nitrided AISI 5140 steel have been assessed by evaluating composition of phases, surface hardness, compound layer thickness, and case depth by using X-ray diffraction (XRD), microhardness tests, and scanning electron microscopy (SEM). It was found that the growth of compound layer can be controlled and the diffusion improved when the gas mixture includes H_2 gas. Additionally, it was determined that the amount of Ar in dual gas mixture must be at 20% minimum to obtain distinctive surface hardness and compound layer thickness.
2002-10-01
International Nuclear Information System (INIS)
Austenitic stainless steel AISI 304 has been nitrided by radio frequency (rf) plasma containing various nitrogen-hydrogen gas mixtures, in order to study the effect of hydrogen on structure and magnetic properties of the formed compound layer. The thermal temperature has been measured at the vicinity of the samples. The compound layer thus produced has been characterized using, X-ray diffractometer and vibration sample magnetometer. Providing the total pressure of nitrogen and hydrogen is held constant, the addition of hydrogen up to 50% gives new structural phases. The magnetization values of the plasma treated samples are strongly dependent on the percentage of H_2 in the gas phase. An excessive amount of hydrogen (#approx#75%) on the other hand, retards the nitriding process. The surface temperature of the sample and plasma condition is crucial factors for nitriding process.
2006-04-15
(Ti,Cr,Nb)CN coatings deposited on nitrided high-speed steel by cathodic arc method
British Library Electronic Table of Contents (United Kingdom)
The combined processes of plasma nitriding and cathodic arc deposition of (Ti,Cr,Nb)CN coatings were applied to HSS substrates. The nitrided layers, obtained in a mixture of H2 (70%) and N2 (30%) at two different temperatures (480^oC and 510^oC), were examined for the microhardness depth profiles. Characterization of the duplex coatings was performed by investigating elemental and phase composition, texture, hardness, friction and wear. XRD and XPS analyses revealed the formation of a mixture of a carbonitride fcc solid solution, in a dominant proportion, and metallic chromium. The film hardness was measured to be ~34GPa. The duplex (Ti,Cr,Nb)CN coatings exhibited superior tribological behavior as compared to both nitrided layers and non-duplex coatings.
2011-01-01
Study of the mechanism of electrochemical hydrogen storage in nano-porous carbons
Energy Technology Data Exchange (ETDEWEB)
An efficient method of hydrogen storage in nano-porous carbons is its reversible sorption by electrochemical decomposition of a KOH water solution according to the following equation: C + xH{sub 2}O + xe{sup -} {yields} (CH{sub x}) + xOH{sup -} where (CH{sub x}) stands for the hydrogen inserted into the nano-porous carbon during charging and oxidized during discharging. Although various carbon materials have been investigated as hydrogen adsorbents, the information about the storage mechanism as well as the nature of the hydrogen/carbon interaction is still not sufficient. In order to extend the understanding of the process, carbon samples charged electrochemically were investigated by temperature programmed desorption (TPD). The nature of the hydrogen/carbon interaction was studied by electrochemical analysis at different temperatures. The TPD experiments consist of heating the samples from room temperature to 950 C and of quantitative ...
2005-07-01
Solution of the orthopositronium lifetime puzzle
The intrinsic decay rate of orthopositronium formed in SiO/sub 2/ powder is measured using the direct 2 gamma correction method such that the time dependence of the pick-off annihilation rate is precisely determined. The decay rate of orthopositronium is found to be 7.0396+or-0.0012(stat.)+or-0.0011(sys.)/ mu s/sup -1/, which is consistent with our previous measurements with about twice the accuracy. Results agree well with the O( alpha /sup 2/) QED prediction, and also with a result reported very recently using nanoporous film.
2004-01-01
Sample method for formation of nanometer scale holes in membranes
Energy Technology Data Exchange (ETDEWEB)
When nanometer scale holes (diameters of 50 to a few hundred nm) are imaged in a scanning electron microscope (SEM) at pressures in the 10{sup -5} to 10{sup -6} torr range, hydrocarbon deposits built up and result in the closing of holes within minutes of imaging. Additionally, electron beam deposition of material from a gas source allows the closing of holes with films of platinum or TEOS oxide. In an instrument equipped both with a focused ion beam (FIB), and an SEM, holes can be formed and then covered with a thin film to form nanopores with controlled openings, ranging down to only a few nanometers.
2003-02-24
Energy Technology Data Exchange (ETDEWEB)
There is increasing demand to functionalize meso- and nano-porous materials by coating and make the porous substrate biocompatible or environment friendly. However, coating on a meso-porous substrate poses great challenges, especially if the pore aspect ratio is high. In the current work the pulsed laser deposition (PLD) method is used for coating Ni{sub 3}Al-based meso-porous membranes with diamond-like carbon (DLC) layers of high thickness homogeneity and adhesion. (orig.)
2008-08-15
Pitting corrosion resistance of silicon-implanted stainless steels
International Nuclear Information System (INIS)
The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).
Influence of germanium and oxygen impurities on the radiation hardening of monocrystalline silicon
International Nuclear Information System (INIS)
... defects doped materials germanium infrared radiation monocrystals neutron
Boron profiles in amorphous and crystalline silicon
Energy Technology Data Exchange (ETDEWEB)
The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.
1989-01-01
Energy Technology Data Exchange (ETDEWEB)
When liquids are confined in nano-scopic dimensions, their properties differ from the corresponding bulk liquid, due to their reduced dimensionality and surface effects. Phase transition temperatures and pressures are often shifted from the bulk values and new phases can appear due to the strong interactions of the molecules with the confining walls. We have studied the structural and dynamical properties of aromatic liquids such as benzene, toluene, and ortho-terphenyl confined in nano-porous materials, MCM-41 and SBA-15, synthesized and characterized in our laboratory. A non-trivial dependence of the glass transition temperature, T{sub g}, on the pore size and surface treatment of nano-porous materials is confirmed and interpreted as resulting from a competition between the fluid-wall and fluid-fluid intermolecular interactions. An increase of T{sub g} is observed for small pore sizes and attractive surface while T{sub g} decreases for non ...
2006-11-15
Energy Technology Data Exchange (ETDEWEB)
Formaldehyde, a well-identified indoor pollutant, was recently classified as carcinogenic. New regulations for the air quality are expected and therefore there is a need for low-cost sensors, sensitive and selective with a fast response time for the detection of formaldehyde at ppb level. In the present work, we had developed a chemical sensor based on nano-porous matrices doped with Fluoral-P and optical methods of detection. The nano-porous matrices, elaborated via the Sol-Gel process, display nano-pores whose cavity is tailored for the trapping of the targeted pollutant. They provide a first selectivity with the discrimination of the pollutants by their size. A second selectivity is obtained with a molecular probe, Fluoral-P, which reacts specifically with formaldehyde leading to the 3,5- di-acetyl-1,4-dihydro-lutidine (DDL). The kinetics of formation of DDL was studied as function of many parameters such as the ...
2006-12-15
Energy Technology Data Exchange (ETDEWEB)
The diffusion of methane confined in nano-porous carbon aerogel with the average pore size 48 {angstrom} and porosity 60% was investigated as a function of pressure at T = 298 K using quasi-elastic neutron scattering (QENS). The diffusivity of methane shows a clear effect of confinement: it is about two orders of magnitude lower than in bulk at the same thermodynamic conditions and is close to the diffusivity of liquid methane at 100 K (i.e. {approx} 90 K below the liquid-gas critical temperature T{sub C} {approx} 191 K). The diffusion coefficient (D) of methane initially increases with pressure by a factor of {approx}2.5 from 3.47 {+-} 0.41 x 10{sup -10} m{sup 2} s{sup -1} at 0.482 MPa to D = 8.55 {+-} 0.33 x 10{sup -10} m{sup 2} s{sup -1} at 2.75 MPa and starts to decrease at higher pressures. An explanation of the observed non-monotonic behavior of the diffusivity in the confined fluid is based on the results of small-angle neutron scattering experiments of the ...
2010-04-01
Energy Technology Data Exchange (ETDEWEB)
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...
2007-10-15
International Nuclear Information System (INIS)
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...
2007-10-01
Energy Technology Data Exchange (ETDEWEB)
Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high ...
1999-07-01
International Nuclear Information System (INIS)
Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high ...
1998-05-24
Energy Technology Data Exchange (ETDEWEB)
Thermal (gas) nitridation of stainless steel alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant nitride containing surface layers (Cr{sub 2}N, CrN, TiN, V{sub 2}N, VN, etc.) of interest for fuel cells, batteries, and sensors. This paper presents results of proton exchange membrane (PEM) single-cell fuel cell studies of stamped and pre-oxidized/nitrided developmental Fe-20Cr-4V weight percent (wt.%) and commercial type 2205 stainless steel alloy foils. The single-cell fuel cell behavior of the stamped and pre-oxidized/nitrided material was compared to as-stamped (no surface treatment) 904L, 2205, and Fe-20Cr-4V stainless steel alloy foils and machined graphite of similar flow field design. The best fuel cell behavior among the alloys was exhibited by the pre-oxidized/nitrided Fe-20Cr-4V, which exhibited {proportional_to}5-20% ...
2010-09-01
Energy Technology Data Exchange (ETDEWEB)
Thermal (gas) nitridation of stainless steel alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant nitride containing surface layers (Cr{sub 2}N, CrN, TiN, V{sub 2}N, VN, etc.) of interest for fuel cells, batteries, and sensors. This paper presents results of proton exchange membrane (PEM) single-cell fuel cell studies of stamped and pre-oxidized/nitrided developmental Fe-20Cr-4V weight percent (wt.%) and commercial type 2205 stainless steel alloy foils. The single-cell fuel cell behavior of the stamped and pre-oxidized/nitrided material was compared to as-stamped (no surface treatment) 904L, 2205, and Fe-20Cr-4V stainless steel alloy foils and machined graphite of similar flow field design. The best fuel cell behavior among the alloys was exhibited by the pre-oxidized/nitrided Fe-20Cr-4V, which exhibited {approx}5-20% better peak ...
2010-09-01
Energy Technology Data Exchange (ETDEWEB)
Nitriding leads to improved tribological and corrosive properties of iron alloy components. In order to study the effect of plasma nitriding parameters on the structure of compound layer and diffusion zone, a systematic variation of process parameters, temperature and process gas atmosphere has been carried out. Metallographic inspection, X-ray diffraction and glow discharge optical spectroscopy analysis (GDOES) were used in this investigation. The results clarified that depending on the amount of nitrogen in the gas atmosphere nitrided layers with and without compound layer can be generated in the surface of M2 tool steel for temperatures from 350 C to 500 C. For plasma nitriding in 5 vol.% Nitrogen and 95 vol.% Hydrogen no compact compound layer was formed. The gas mixture of 76 vol.% Nitrogen resulted in compound layer formation for all temperatures from 350 C to 500 C. X-ray phase analysis indicated ...
2001-09-01
Effect of laser induced plasma nitriding on al surface microstructure
Energy Technology Data Exchange (ETDEWEB)
In this paper, aluminium nitride synthesis is carried out by direct laser irradiation onto an aluminium target surface in a nitrogen containing atmosphere. The influence of various processing parameters on the microstructure of AlN thin films is investigated in order to improve their tribological properties. The main microstructural characteristics: nature, concentration, in depth distribution and morphology of various phases are studied versus processing parameters by TEM and GIXD. (author). 2 refs., 1 fig., 2 photos.
1996-12-31
Effect of laser induced plasma nitriding on al surface microstructure
International Nuclear Information System (INIS)
In this paper, aluminium nitride synthesis is carried out by direct laser irradiation onto an aluminium target surface in a nitrogen containing atmosphere. The influence of various processing parameters on the microstructure of AlN thin films is investigated in order to improve their tribological properties. The main microstructural characteristics: nature, concentration, in depth distribution and morphology of various phases are studied versus processing parameters by TEM and GIXD. (author). 2 refs., 1 fig., 2 photos.
Energy Technology Data Exchange (ETDEWEB)
Chromium nitride/Cr coating has been deposited on surface of 316L stainless steel to improve conductivity and corrosion resistance by physical vapor deposition (PVD) technology. Electrochemical behaviors of the chromium nitride/Cr coated 316L stainless steel are investigated in 0.05 M H{sub 2}SO{sub 4}+2 ppm F{sup -} simulating proton exchange membrane fuel cell (PEMFC) environments, and interfacial contact resistance (ICR) are measured before and after potentiostatic polarization at anodic and cathodic operation potentials for PEMFC. The chromium nitride/Cr coated 316L stainless steel exhibits improved corrosion resistance and better stability of passive film either in the simulated anodic or cathodic environment. In comparison to 316L stainless steel with air-formed oxide film, the ICR between the chromium nitride/Cr coated 316L stainless steel and carbon paper is about 30 m{omega} cm{sup 2} that is ...
2011-02-01
British Library Electronic Table of Contents (United Kingdom)
Thermal (gas) nitridation of stainless steel alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant nitride containing surface layers (Cr2N, CrN, TiN, V2N, VN, etc.) of interest for fuel cells, batteries, and sensors. This paper presents results of scale-up studies to determine the feasibility of extending the nitridation approach to thin 0.1mm stainless steel alloy foils for proton exchange membrane fuel cell (PEMFC) bipolar plates. Developmental Fe-20Cr-4V alloy and type 2205 stainless steel foils were treated by pre-oxidation and nitridation to form low-ICR, corrosion-resistant surfaces. As-treated Fe-20Cr-4V foil exhibited target (low) ICR values, whereas 2205 foil suffered from run-to-run variation in ICR values, ranging up to 2x the...
2010-01-01
British Library Electronic Table of Contents (United Kingdom)
Thermal (gas) nitridation of stainless steel alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant nitride containing surface layers (Cr2N, CrN, TiN, V2N, VN, etc.) of interest for fuel cells, batteries, and sensors. This paper presents results of proton exchange membrane (PEM) single-cell fuel cell studies of stamped and pre-oxidized/nitrided developmental Fe-20Cr-4V weight percent (wt.%) and commercial type 2205 stainless steel alloy foils. The single-cell fuel cell behavior of the stamped and pre-oxidized/nitrided material was compared to as-stamped (no surface treatment) 904L, 2205, and Fe-20Cr-4V stainless steel alloy foils and machined graphite of similar flow field design. The best fuel cell behavior among the alloys was exhibited...
2010-01-01
Plasma nitriding in industry-problems, new solutions and limits
Energy Technology Data Exchange (ETDEWEB)
Plasma nitriding as a diffusion process is the oldest plasma-assisted process for the surface treatment of metals. Although the use of this process in industry is already well developed and established there are still several scientific questions in the basic understanding of the process and consequently some problems and limits concerning its upscaling for industrial use. Therefore it is necessary to get reproducible results for different geometries of workpieces and for different workload sizes. Correlations between different plasma and treatment parameters, especially in big plants, have to be considered. To understand the process handling using some simple but impressive models the difficulties of treating single parts or mixed workloads are explained. For profitable applications of plasma nitriding plants, some guidelines for the use and selection of a suitable process and a device are given. By the use of a pulsed d.c. power supply for ...
1991-07-07
Phase formation in selected surface-roughened plasma-nitrided 304 austenite stainless steel
Energy Technology Data Exchange (ETDEWEB)
Direct current (DC) glow discharge plasma nitriding was carried out on three selected surface-roughened AISI 304 stainless steel samples at 833 K under 4 mbar pressures for 24 h in the presence of N{sub 2}:H{sub 2} gas mixtures of 50 : 50 ratios. After plasma nitriding, the phase formation, case depth, surface roughness, and microhardness of a plasma-nitrided layer were evaluated by glancing angle x-ray diffractogram, optical microscope, stylus profilometer, and Vickers microhardness tester techniques. The case depth, surface hardness, and phase formation variations were observed with a variation in initial surface roughness. The diffraction patterns of the plasma-nitrided samples showed the modified intensities of the {alpha} and {gamma} phases along with those of the CrN, Fe{sub 4}N, and Fe{sub 3}N phases. Hardness and case depth variations were observed with a variation in surface roughness. A ...
2008-04-01
Investigation of light elements in nitrided steel using elastic backscattering analysis
International Nuclear Information System (INIS)
This work describes the ability of ion beam analysis techniques IBA to simultaneously determine the concentration and the possible depth profile of some light elements, such as carbon, oxygen and nitrogen, in matrices of high atomic number Z, such as stainless steel materials. In fact, the nitriding process of some materials has the potential to improve their tribological and mechanical properties and to offer various advantages as compared with other methods used in the modification of surfaces. Gas and Plasma nitriding were applied to certain types of steel, such as AISI-304 and H-13 which are commonly used in the industry, in order to improve their hardness and their surface corrosion resistance. The improvement was correlated with the depth profile of N and the consequent structure variations. More specifically, non-Rutherford elastic backscattering (alpha, alpha) at 5 MeV was performed on different samples, before and after ...
Growth of Cr-Nitrides on commercial Ni-Cr and Fe-Cr base alloys to protect PEMFC bipolar plates
Energy Technology Data Exchange (ETDEWEB)
Nitridation of Cr-bearing alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant CrN or Cr{sub 2}N base surfaces of interest for a range of electrochemical devices, including fuel cells, batteries, and sensors. This paper presents results of exploratory studies of the nitridation of commercially available, high Cr (30-35 wt%) Ni-Cr alloys and a ferritic high Cr (29 wt%) stainless steel for proton exchange membrane fuel cell (PEMFC) bipolar plates. A high degree of corrosion resistance in sulfuric acid solutions designed to simulate bipolar plate conditions and low ICR values were achieved. Oxygen impurities in the nitriding environment were observed to play a significant role in the nitrided surface structures that formed, with detrimental effects for the Ni-Cr base alloys, but beneficial effects for the stainless steel alloy. Positive results from ...
2007-11-15
Energy Technology Data Exchange (ETDEWEB)
The usually low wear resistance of titanium materials can be increased by the thermochemical surface treatment nitriding. In result of comparative investigations of gas and plasma nitriding it will be shown that it is possible to obtain a specific variation of the properties in the highly stressed case by means of these both technologies on example of the ({alpha}+{beta}) alloy Ti-6Al-4V. Gas and plasma nitriding was carried out in the temperature range from 650 to 800 C over 4 to 48 h in different gas atmospheres, i.e. 100% NH{sub 3} (gas), 100% N{sub 2} (gas and plasma), 20% H{sub 2} + 80% N{sub 2} and 20% Ar + 20% H{sub 2} (plasma). The temperature range was fixed in the middle of ({alpha}+{beta}) region, because the core properties are influenced negative in the field of {beta}-transustemperature. The relations between the applied nitriding technologies, the layer structure (chemical, phases, ...
1997-11-01
International Nuclear Information System (INIS)
The usually low wear resistance of titanium materials can be increased by the thermochemical surface treatment nitriding. In result of comparative investigations of gas and plasma nitriding it will be shown that it is possible to obtain a specific variation of the properties in the highly stressed case by means of these both technologies on example of the (#alpha#+#beta#) alloy Ti-6Al-4V. Gas and plasma nitriding was carried out in the temperature range from 650 to 800 C over 4 to 48 h in different gas atmospheres, i.e. 100% NH_3 (gas), 100% N_2 (gas and plasma), 20% H_2 + 80% N_2 and 20% Ar + 20% H_2 (plasma). The temperature range was fixed in the middle of (#alpha#+#beta#) region, because the core properties are influenced negative in the field of #beta#-transustemperature. The relations between the applied nitriding technologies, the layer structure (chemical, phases, geometrical) and selected layer ...
Energy Technology Data Exchange (ETDEWEB)
A dense and supersaturated nitrogen layer with higher conductivity is obtained on the surface of austenitic stainless steel 304L by the low temperature plasma nitriding. The effect of plasma nitriding on the corrosion behavior and interfacial contact resistance (ICR) for the austenitic stainless steel 304L was investigated in 0.05M H{sub 2}SO{sub 4}+2ppm F{sup -} simulating proton exchange membrane fuel cell (PEMFC) environment using electrochemical and electric resistance measurements. The experiment results show that the stable passive film is formed after the potentiostatic polarization at the specified anodic or cathodic potentials under PEMFC operation condition, and the plasma nitriding improves slightly the corrosion resistance and decreases markedly the ICR of 304L. The ICR of the plasma nitrided 304L increases after the potentiostatic polarizations for 4h, and lower than 100m{omega}cm{sup 2} at ...
2007-01-01
Energy Technology Data Exchange (ETDEWEB)
The effect of the nitrogen uptake in {alpha}-iron upon spark erosion in gaseous and liquid ammonia, plasma nitriding, and plasma immersion ion implantation is studied. The resulting phases and hyperfine parameters, measured by the Moessbauer spectroscopy, are discussed from the point of view of initial conditions of their preparation and subsequent heat and/or mechanical treatment. Spark erosion in the ammonia gas produces fine particles with the dominating ferromagnetic {alpha}-Fe phase (50%). The 20% of specimen volume form {alpha}'-Fe and {alpha}''-Fe{sub 16}N{sub 2} phases. The last 30% occupy the {gamma}'-Fe{sub 4}N, ferro- and paramagnetic {epsilon} phases, and {gamma}-Fe(N). Nitriding in the liquid ammonia allows to incorporate the higher content of nitrogen into {alpha}-iron particles which results in the formation of paramagnetic {epsilon}({zeta})-Fe{sub 2}N phase. This phase also dominates the ...
2001-09-01
International Nuclear Information System (INIS)
The effect of the nitrogen uptake in #alpha#-iron upon spark erosion in gaseous and liquid ammonia, plasma nitriding, and plasma immersion ion implantation is studied. The resulting phases and hyperfine parameters, measured by the Moessbauer spectroscopy, are discussed from the point of view of initial conditions of their preparation and subsequent heat and/or mechanical treatment. Spark erosion in the ammonia gas produces fine particles with the dominating ferromagnetic #alpha#-Fe phase (50%). The 20% of specimen volume form #alpha#'-Fe and #alpha#''-Fe_1_6N_2 phases. The last 30% occupy the #gamma#'-Fe_4N, ferro- and paramagnetic #epsilon# phases, and #gamma#-Fe(N). Nitriding in the liquid ammonia allows to incorporate the higher content of nitrogen into #alpha#-iron particles which results in the formation of paramagnetic #epsilon#(#zeta#)-Fe_2N phase. This phase also dominates the surface of #alpha#-iron specimen implanted by nitrogen using ...
2001-09-01
Energy Technology Data Exchange (ETDEWEB)
Deposition of hard coatings may influence the mechanical properties of the bulk material and its corrosion resistance. In this work we study the hardness of the coated and the back side of 100Cr6 steel plates. Electrochemical corrosion tests were performed in O{sub 2}-saturated acetate buffer of pH 5.6 at 25degC. Chromium nitride and titanium nitride coatings prepared by different physical vapour deposition processes, such as arc, thermionic arc evaporation, magnetron sputtering and ion-beam-assisted deposition (IBAD) were compared. The results show that, for sufficient corrosion protection, chromium nitride layers have to be thicker than 500 nm. An increased nitrogen partial pressure in the evaporation chamber of the IBAD process improves the corrosion resistance significantly. The hardness of the substrates was reduced in the case of thermoionic arc evaporation only, indicating a deposition temperature of more than ...
1991-07-07
Study of porous silicon morphologies for electron transport
International Nuclear Information System (INIS)
Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...
1993-05-17
Selective emitter using porous silicon for crystalline silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...
2009-06-15
International Nuclear Information System (INIS)
The ion nitriding treatment is a process widely used in steel alloys to improve the material's properties; such as surface hardness, resistance to wear, fatigue life and resistance to corrosion. But geometric changes in the components can produce during the nitriding process different effects on the behavior of the plasma, such as local variations in the electric field, an empty cathode effect, etc. These in turn can affect among other factors the local temperature and therefore the kinetics of the process, generating variations in the compound layer thicknesses and zone of diffusion, and micro-hardness profile. These heterogeneities limit the effectiveness of the plasma nitriding process, where control and duplication of the surface modification are most important. This work aims to study the effect of the geometry of the pieces treated with ionic nitriding, especially the effect of the orifices. An ...
2006-12-01
International Nuclear Information System (INIS)
In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.
2008-05-19
Application of neutron transmutation doping method to initially p-type silicon material
Energy Technology Data Exchange (ETDEWEB)
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...
2009-07-15
Application of neutron transmutation doping method to initially p-type silicon material
International Nuclear Information System (INIS)
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.
2008-05-12
Annealing of silicon implanted with arsine and hydrogen ions
Energy Technology Data Exchange (ETDEWEB)
Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)
2003-01-01
Energy Technology Data Exchange (ETDEWEB)
The US National Energy Policy of 2001 advocated the development of advanced fuel and fuel cycle technologies that are cleaner, more efficient, less waste-intensive, and more proliferation resistant. The need for advanced fuel development is emphasized in on-going DOE-supported programs, e.g., Global Nuclear Energy Initiative (GNEI), Advanced Fuel Cycle Initiative (AFCI), and GEN-IV Technology Development. The Directorates of Energy & Environment (E&E) and Chemistry & Material Sciences (C&MS) at Lawrence Livermore National Laboratory (LLNL) are interested in advanced fuel research and manufacturing using its multi-disciplinary capability and facilities to support a design concept of a small, secure, transportable, and autonomous reactor (SSTAR). The E&E and C&MS Directorates co-sponsored this Laboratory Directed Research & Development (LDRD) Project on Mono-Uranium Nitride Fuel Development for SSTAR and Space Applications. ...
2006-02-09
International Nuclear Information System (INIS)
Conventional plasma carburizing or nitriding for austenitic stainless steels results in a degradation of corrosion resistance. However, a low temperature plasma surface treatment can improve surface hardness without deteriorating the corrosion resistance. The 2-step low temperature plasma processes (the combined carburizing and post nitriding) offers the increase of both surface hardness and thickness of hardened layer and corrosion resistance than the individually processed low temperature nitriding and low temperature carburizing techniques. In the present paper, attempts have been made to investigate the influence of the introduction of Ar gas (0#approx#20%) in nitriding atmosphere during low temperature plasma nitriding at 370 .deg. C after low temperature plasma carburizing at 470 .deg. C. All treated specimens exhibited the increase of the surface hardness with increasing Ar ...
2008-03-01
International Nuclear Information System (INIS)
The effects of CH_4 content at nitriding step in the low temperature two-step plasma treatment (carburizing+nitriding) on the surface characteristics of AISI304L stainless steel were investigated. The low temperature plasma carburizing was carried out at 550 .deg. C for 5h in a gas mixture of H_2 Ar and CH_4. The thickness of a carburized layer increased up to about 30 #mu#m and corrosion resistance of the layer decreased due to the precipitation formed at the grain boundary. After carburizing, a low temperature plasma nitriding was subsequently performed in the same chamber at 400 .deg. C for 15h to improve corrosion resistance and to further increase the surface hardness. The surface hardness of a N-enriched layer after nitriding reached up to 1,200HV_0_._1, which is much higher than that of as-carburized layer(750 HV_0_._1). The post nitriding process had a beneficial effect on ...
2007-10-01
Energy Technology Data Exchange (ETDEWEB)
Thermal (gas) nitridation of stainless steel alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant nitride containing surface layers (Cr{sub 2}N, CrN, TiN, V{sub 2}N, VN, etc.) of interest for fuel cells, batteries, and sensors. This paper presents results of scale-up studies to determine the feasibility of extending the nitridation approach to thin 0.1 mm stainless steel alloy foils for proton exchange membrane fuel cell (PEMFC) bipolar plates. Developmental Fe-20Cr-4V alloy and type 2205 stainless steel foils were treated by pre-oxidation and nitridation to form low-ICR, corrosion-resistant surfaces. As-treated Fe-20Cr-4V foil exhibited target (low) ICR values, whereas 2205 foil suffered from run-to-run variation in ICR values, ranging up to 2 x the target value. Pre-oxidized and nitrided surface structure examination revealed ...
2010-09-01
Energy Technology Data Exchange (ETDEWEB)
Thermal (gas) nitridation of stainless steels can yield low interfacial contact resistance (ICR), electrically-conductive and corrosion-resistant nitride containing surfaces (Cr2N, CrN, TiN, V2N, VN, etc) of interest for fuel cells, batteries, and sensors. This paper presents the results of scale up studies to determine the feasibility of extending the nitridation approach to thin 0.1 mm stainless steel alloy foils for proton exchange membrane fuel cell (PEMFC) bipolar plates. A major emphasis was placed on selection of alloy foil composition and nitidation conditions potentially capable of meeting the stringent cost goals for automotive PEMFC applications. Developmental Fe-20Cr-4V alloy and type 2205 stainless steel foils were treated by pre-oxidation and nitridation to form low-ICR, corrosion-resistant surfaces. Promising behavior was observed under simulated aggressive anode- and cathode- side ...
2010-09-01
Influence of plasma nitriding on fatigue strength and fracture of a B-Mn steel
Energy Technology Data Exchange (ETDEWEB)
The first part of a systematic investigation is presented of surface treatments affecting the fatigue behavior of smooth and notched quenched and tempered (Q and T) specimens made of a B-Mn SS2131 ({approx}AISI 15B21H) steel. In this part, the effects of plasma nitriding (nitriding temperature=480 C, time=24 h) on the fatigue strength and notch sensitivity were investigated. Constant stress amplitude plane reversed bending fatigue tests (R=-1) at 47 Hz were conducted using cylindrical plasma nitriding (PN) and Q and T steel specimens with K{sub t}=1.05 and 1.7. The compound layer was found to consists of {epsilon}-phase and {gamma}`-phase. S-N curves show that plasma nitriding improves the fatigue limit by 53 and 115% of Q and T smooth and notched specimens, respectively. The fatigue strength of smooth specimens is improved through the whole fatigue life but only for long fatigue lives for notched ...
1998-02-01
Wire chamber degradation at the Argonne ZGS
International Nuclear Information System (INIS)
Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.
1986-01-16
Wire chamber degradation at the Argonne ZGS
Energy Technology Data Exchange (ETDEWEB)
Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.
1986-01-01
The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long
1999-01-01
Single Molecule Source Reagents for CVD of Beta Silicon Carbide.
Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...
1991-01-01
UK PubMed Central (United Kingdom)
An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available
2008-01-01
Tantalum nitride as a diffusion barrier between Pd_2Si or CoSi_2 and aluminum
International Nuclear Information System (INIS)
Reactively sputtered tantalum nitride (Ta_2N) has been investigated as a diffusion barrier between Pd_2Si and aluminum and CoSi_2 and Al. Ta_2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 "0C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd_2Si/Ta_2N/Al were excellent and showed no deterioration after annealing at 500 "0C. However, similar devices with CoSi_2 contacts and Ta_2N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.
Tantalum nitride as a diffusion barrier between Pd/sub 2/Si or CoSi/sub 2/ and aluminum
Energy Technology Data Exchange (ETDEWEB)
Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.
1989-04-15
Soliton microdynamics and thermal conductivity of uranium nitride at high temperatures
British Library Electronic Table of Contents (United Kingdom)
The microdynamics of soliton waves and localized modes of nonlinear vibrations of the acoustic and optical types in uranium nitride has been investigated. It has been shown that, with an increase in the excitation energy in the spectral gap between the bands of optical and acoustic phonons, the energies of solitons increase, whereas the energies of local modes decrease. The previously experimentally observed unidentified quasi-resonant features, which shift in the gap with variations in the temperature, can represent the revealed soliton waves and local modes. The microdynamics of heat conduction of uranium nitride has been studied for the stochastic generation of soliton waves and local modes in the case of spatially distant energy absorption. The thermal conductivity coefficient determin...
2011-01-01
Radio frequency plasma nitriding of aluminium at higher power levels
International Nuclear Information System (INIS)
Nitriding of aluminium 2011 using a radio frequency plasma at higher power levels (500 and 700 W) and lower substrate temperature (500 deg. C) resulted in higher AlN/Al_2O_3 ratios than obtained at 100 W and 575 deg. C. AlN/Al_2O_3 ratios derived from X-ray photoelectron spectroscopic analysis (and corroborated by heavy ion elastic recoil time of flight spectrometry) for treatments preformed at 100 (575 deg. C), 500 (500 deg. C) and 700 W (500 deg. C) were 1.0, 1.5 and 3.3, respectively. Scanning electron microscopy revealed that plasma nitrided surfaces obtained at higher power levels exhibited much finer nodular morphology than obtained at 100 W.
2006-12-05
Point defects in dilute nitride III-N-As and III-N-P
International Nuclear Information System (INIS)
We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.
2006-04-01
Microstructural characterization of plasma nitrided austenitic stainless steel
Energy Technology Data Exchange (ETDEWEB)
The microstructure of the layers produced by plasma nitriding austenitic stainless steel at different treatment temperatures (400 and 500 C) were studied by transmission electron microscopy (TEM) together with X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the microstructures were composed of 'expanded austenite' ({gamma}{sub N}) and {alpha}(ferrite)+CrN following plasma nitriding at lower and higher treatment temperatures, respectively. The former contains stacking faults and deformed twin substructures, while the latter is made up of colonies displaying a lamellar structure. Kurdjumov-Sachs or Nishiyama-Wassermann orientation relationships between the {alpha} and CrN layer were observed. (orig.)
2000-10-23
Dependence of nitriding degree of Ti surface by non-LTE nitrogen plasma on various plasma parameters
International Nuclear Information System (INIS)
Experiments of plasma nitriding of titanium are carried out by two plasma sources. One is a microwave discharge plasma source under several Torr, and the other is a nitrogen arc jet generated under atmospheric pressure followed by rapid expansion into a gas wind tunnel. The relationship between the surface density of nitrogen atoms in the #alpha#-Ti and various plasma parameters is systematically studied. For the microwave nitrogen plasma, it is found that the effect of the vibration temperature is the most essential for the surface nitriding, whereas the effect of electron temperature, density and rotation temperature is less remarkable. It is also found that the higher vibration temperature of the microwave discharge nitrogen plasma makes the target temperature higher, and consequently, the surface density of atomic nitrogen remarkably increased. However, the effect of target temperature is less remarkable for the arc jet nitrogen plasma.
2004-06-01
An X-ray photoelectron spectroscopic study of B-N-Ti system
International Nuclear Information System (INIS)
Composite nitrides (such as BN, TiN) are widely used in various industrial applications because of their extreme wear and corrosion resistance, thermal and electrical properties. in order to obtain composite materials with these optimal properties, it is important to elucidate whether any chemical reactions occur at nitride/metal interfaces, e.g., those involving BN-Ti/TiN. Materials of interest include the deposition by PVD of Ti and TiN on BN substrates. Some of these systems were then subjected to varying degrees of physical and thermal alteration. Detailed X-ray photoelectron spectroscopy (XPS) has therefore been rendered of these interfaces using cross-sectional display and sputter etching. Resulting structural and morphological features have been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). Diffusion of the nitridation, oxynitride formation and interfacial growth are of general ...
1997-04-04
Untitled - NASA Technical Report Server (NTRS)
is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...
The crystalline-silicon photovoltaic R&D project at NREL and SNL
Energy Technology Data Exchange (ETDEWEB)
This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.
1996-12-31
Strained silicon for quantum computing
Energy Technology Data Exchange (ETDEWEB)
Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)
2002-03-07
Mechanical Properties of Microelectronics Thin Films: Silicon ...
... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...
1989-10-01
Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors
International Nuclear Information System (INIS)
English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,
2006-03-27
Efficiency of silicon and GaAs concentrator solar cells operated inside integrating cavity receivers
Energy Technology Data Exchange (ETDEWEB)
The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).
1991-06-01
CMS Silicon Strip Tracker Performance
In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.
2011-01-01
Abstracts by Mission Directorate - NASA
A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...
ANALYSIS OF BENDING CREEP BEHAVIOR OF SILICON ...
... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...
7 - NASA Technical Reports Server
... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...
International Nuclear Information System (INIS)
Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.
Nonformity of the electron density in amorphous silicon films
Energy Technology Data Exchange (ETDEWEB)
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
1985-12-01
Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon
International Nuclear Information System (INIS)
The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).
Method of mitigating titanium impurities effects in p-type silicon material for solar cells
An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.
1980-05-01
Energy Technology Data Exchange (ETDEWEB)
According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.
2001-01-01
Electrochemical stability of silicon/carbon composite anode for lithium ion batteries
International Nuclear Information System (INIS)
Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.
2007-04-20
Dielectric barrier discharge using corona-modified silicone rubber
Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.
2008-10-01
British Library Electronic Table of Contents (United Kingdom)
The effects of pore curvature and surface heterogeneity on the adsorption of water on a graphitic surface at 298 K were investigated using a Grand Canonical Monte Carlo (GCMC) simulation. Slit and cylindrical pores are used to study the curvature effects. To investigate the surface heterogeneity the functional group and the structural defect on the surface were specifically considered. The hydroxyl group (OH) is used as a model for the functional group and the water potential model proposed by Muller et al. is used to calculate the water interaction. For the homogeneous cylinder, the pore filling occurs at a pressure lower than the saturation pressure of the water model, while it is greater in the case of homogeneous slit pore. The size of hysteresis loop is more sensitive to the length of...
2008-01-01
British Library Electronic Table of Contents (United Kingdom)
In this paper, multilayer oxide nanorods were deposited in the nanopores of anodic aluminum oxide (AAO) via solution infiltration followed by heat treatment. The nanorods have a core-shell structure. First, the shell (nanotube) with the thickness of about 40nm was made of TiO"2 through the hydrolysis of (NH"4)"2TiF"6. Second, silver nanoparticles with the diameter of about 3nm were added into the TiO"2 layer through thermal decomposition of AgNO"3 at elevated temperatures. Then, cylindrical cores (nanorods) of CoO and ZnO with 200nm diameter were prepared, respectively. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the structure and composition of the nanorods. UV-vis light absorption measurements in the wavelength range from 350 to...
2011-01-01
Synchrotron SAXS Studies of Nanostructured Materials and Colloidal Solutions: A Review
Scientific Electronic Library Online (English)
Abstract in english Structural characterisations using the SAXS technique in a number of nanoheterogeneous materials and liquid solutions are reviewed. The studied systems are protein (lysozyme)/water solutions, colloidal ZnO particles/water sols, nanoporous NiO-based xerogels, hybrid organic-inorganic siloxane-PEG and PPG nanocomposites and PbTe semiconductor nanocrystals embedded in a glass matrix. These investigations also focus on the transformations of time-varying structures and on str (more) uctural changes related to variations in temperature and composition. The reviewed investigations aim at explaining the unusual and often interesting properties of nanostructured materials and solutions. Most of the reported studies were carried out using the SAXS beamline at the National Synchrotron Light Laboratory (LNLS), Campinas, Brazil.
2002-03-01
Study of the mechanism of electrochemical hydrogen storage in nano-porous carbons
Energy Technology Data Exchange (ETDEWEB)
An efficient method of hydrogen storage in nano-porous carbons is its reversible sorption by electrochemical decomposition of a KOH water solution [1-3] according to the following equation: C + xH{sub 2}O + xe{sup -} {yields} (CH{sub x}) + xOH{sup -} where (CH{sub x}) stands for the hydrogen inserted into the nano-porous carbon during charging and oxidized during discharging. Although various carbon materials have been investigated as hydrogen adsorbents, the information about the storage mechanism as well as the nature of the hydrogen/carbon interaction is still not sufficient. In order to extend the understanding of the process, carbon samples charged electrochemically were investigated by temperature programmed desorpt(TPD). The nature of the hydrogen/carbon interaction was studied by electrochemical analysis at different temperatures. The TPD experiments consist of heating the samples from room temperature to 950 C and of quantitative ...
2005-07-01
Energy Technology Data Exchange (ETDEWEB)
Highly ordered arrays of Ni nanoholes and Fe{sub 20}Ni{sub 80} antidots have been prepared, respectively, by replica/antireplica processing and sputtering techniques using nanoporous alumina membranes as templates. Geometrical characteristics as nanohole/antidot diameter, interpore distance and the overall hexagonal symmetry of arrays are controlled through the original templates. Experimental data on their hysteresis and magnetic domain structure have been taken by vibrating sample magnetometry and magnetic force microscopy, respectively. An analysis of the magnetization process, resulting magnetic anisotropy and magnetic domain structure is summarized considering the influence of those geometry aspects. In particular, the hexagonal symmetry and the density of nanohole/antidots determine the overall magnetic behavior, which is of interest in future high-density magnetic storage systems.
2008-07-15
International Nuclear Information System (INIS)
Highly ordered arrays of Ni nanoholes and Fe20Ni80 antidots have been prepared, respectively, by replica/antireplica processing and sputtering techniques using nanoporous alumina membranes as templates. Geometrical characteristics as nanohole/antidot diameter, interpore distance and the overall hexagonal symmetry of arrays are controlled through the original templates. Experimental data on their hysteresis and magnetic domain structure have been taken by vibrating sample magnetometry and magnetic force microscopy, respectively. An analysis of the magnetization process, resulting magnetic anisotropy and magnetic domain structure is summarized considering the influence of those geometry aspects. In particular, the hexagonal symmetry and the density of nanohole/antidots determine the overall magnetic behavior, which is of interest in future high-density magnetic storage systems.
2008-07-01
In situ synthesis of silver chloride nanoparticles into bacterial cellulose membranes
British Library Electronic Table of Contents (United Kingdom)
In situ synthesis of silver chloride (AgCl) nanoparticles was carried out under ambient conditions in nanoporous bacterial cellulose (BC) membranes as nanoreactors. The growth of the nanoparticles was readily obtained by alternating dipping of BC membranes in the solution of silver nitrate or sodium chloride followed by a rinse step. X-ray diffraction (XRD) patterns indicated the existence of AgCl nanoparticles in the BC and scanning electron microscopy (SEM) images showed that the AgCl nanoparticles well dispersed on the surface of BC and penetrated into the BC network. The AgCl nanoparticle-impregnated BC membranes exhibited high hydrophilic ability and strong antimicrobial activity against Escherichia coli (Gram-negative) and Staphylococcus aureus (Gram-positive). The preparative proced...
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
This work presents a comparative study of low-alloy steel nitriding for different possible techniques. Active screen plasma nitriding (ASPN) is a successful surface modification method that has many advantages over the conventional DC plasma nitriding (CPN). The corrosion behavior of 30CrNiMo8 low-alloy steel has been examined using anodic polarization tests in 3.5% NaCl solution under varying conditions of ASPN and CPN processes. The process variables included active screen setup parameters, treatment temperature (550 and 580 deg. C), gas mixture (25/75 and 75/25 of N{sub 2}/H{sub 2}) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the compound layer was studied by X-ray diffraction (XRD), microhardness tests, optical microscopy and scanning electron microscopy (SEM). It was observed that ASPN treated samples surface enhanced corrosion resistance while the temperature and/or hole ...
2009-09-18
International Nuclear Information System (INIS)
This work presents a comparative study of low-alloy steel nitriding for different possible techniques. Active screen plasma nitriding (ASPN) is a successful surface modification method that has many advantages over the conventional DC plasma nitriding (CPN). The corrosion behavior of 30CrNiMo8 low-alloy steel has been examined using anodic polarization tests in 3.5% NaCl solution under varying conditions of ASPN and CPN processes. The process variables included active screen setup parameters, treatment temperature (550 and 580 deg. C), gas mixture (25/75 and 75/25 of N_2/H_2) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the compound layer was studied by X-ray diffraction (XRD), microhardness tests, optical microscopy and scanning electron microscopy (SEM). It was observed that ASPN treated samples surface enhanced corrosion resistance while the temperature and/or hole size of ...
2009-09-18
Surface modification of titanium by radio frequency plasma nitriding
Energy Technology Data Exchange (ETDEWEB)
Radio frequency (RF) plasma nitriding using different input plasma processing powers (250-600 W) improves the surface of titanium by forming hard phases of TiN, Ti{sub 2}N, and Ti (N) into the surface. The characteristics of the compound layer have been investigated by optical microscopy, microhardness measurements, and X-ray diffraction. The effect of plasma power on the sample temperature, electron temperature, and plasma density was studied using Langmuir double probe. The measured surface hardness value of the compound layer is 2190 HV 0.1 for treated sample at plasma power 500 W. The compound thickness continuously increases as the plasma power increases. The highest nitriding rate of 5.88 {mu}m{sup 2}/s was recorded when the input plasma power was adjusted at 550 W. This high nitriding rate of treated titanium samples is ascribed to the high concentration of active nitrogen species in the plasma atmosphere and the ...
2006-02-21
Surface modification of titanium by radio frequency plasma nitriding
International Nuclear Information System (INIS)
Radio frequency (RF) plasma nitriding using different input plasma processing powers (250-600 W) improves the surface of titanium by forming hard phases of TiN, Ti_2N, and Ti (N) into the surface. The characteristics of the compound layer have been investigated by optical microscopy, microhardness measurements, and X-ray diffraction. The effect of plasma power on the sample temperature, electron temperature, and plasma density was studied using Langmuir double probe. The measured surface hardness value of the compound layer is 2190 HV 0.1 for treated sample at plasma power 500 W. The compound thickness continuously increases as the plasma power increases. The highest nitriding rate of 5.88 #mu#m"2/s was recorded when the input plasma power was adjusted at 550 W. This high nitriding rate of treated titanium samples is ascribed to the high concentration of active nitrogen species in the plasma atmosphere and the formed ...
2006-02-21
International Nuclear Information System (INIS)
English Oct 1996 p. 352-353 Brazil Maliska, Ana Maria Kuehn, Ingeborg Klein,
1996-10-01
NMR study on the formation mechanism of #beta#-SiAlON from zeolite by nitridation using ammonia gas
International Nuclear Information System (INIS)
#beta#-SiAlON was synthesized from a zeolite by NH_3 gas nitridation and its formation mechanism was investigated using X-ray diffraction and "2"9Si and "2"7Al NMR spectroscopy. It was revealed that most of the Si and Al atoms react to form #beta#-SiAlON via amorphous forms of Si-Al-O-N and O-SiAlON. Nitridation using NH_3 gas is an effective means of preventing mullite formation and promoting the introduction of nitrogen into aluminosilicate materials at lower temperatures than temperatures required by the carbothermal reduction nitridation process. Further, the NMR spectra showed that the siliceous part of the system changed into low z-value of Si_6_-_zAl_zO_zN_8_-_z (#beta#-SiAlON) and the incorporation of Al components into the #beta#-SiAlON was promoted in the later stages of the reaction. (author)
2008-09-01
...Jhala, G and Rayjada, P A and Raole, P M and Mukherjee, S (2005) Influence of alloying elements on the corrosion properties of steels during plasma nitriding process . Journal of Metallurgy and Materials Science, 47 (1). pp. 31-38. This list was generated on ...
Influence of sea water on the fatigue strength and notch sensitivity of a plasma nitrided B-Mn steel
Energy Technology Data Exchange (ETDEWEB)
Notched and smooth cylindrical plasma nitrided (PN) and quench and tempered (Q and T) steel specimens made of a B-Mn SS2131 ({approx}AISI 15B21H) steel have been exposed to constant amplitude plane reversed bending corrosion fatigue tests (R = -1) at 47 Hz in sea water. S - N curves show that sea water suppresses the fatigue limit and reduces fatigue strength (especially at long lives) of smooth and notched Q and T and PN specimens. Plasma nitriding improves the corrosion fatigue resistance of Q and T specimens; this is associated with the good corrosion resistance of {epsilon} and {gamma}`-phases, the enhancement of corrosion and fatigue by compressive residual stresses, and the consumption of H{sup +} ions during reduction of nitrogen. This improvement is more significant for smooth specimens and for long lives. Notch sensitivity of Q and T and PN specimens decreases with fatigue life. Pitting corrosion, cyclic applied stress and residual ...
1998-06-01
Energy Technology Data Exchange (ETDEWEB)
A series of plasma nitriding experiments has been conducted on AISI 304L austenitic stainless steel at temperatures ranging from 375 to 475 C using pulsed-DC plasma with different pulse duty cycles, N{sub 2}-H{sub 2} gas mixtures and treatment times. It is shown that a wide range of treatment parameters exist that allow the formation of the S-phase. The formation and growth of this surface layer depend strongly on the treatment parameters, such as nitrogen partial pressure and duty cycle. Within the parameter range investigated, the layer growth appears to be diffusion controlled with an activation energy about 107 kJ/mol. The formation of CrN precipitates during plasma nitriding is not accompanied by the formation of bcc iron, which might be expected due to the loss of free chromium. However, the S-phase transforms into CrN and bcc iron following a heat treatment at 450 C or higher for 25 h. The wear rate after plasma ...
1999-09-01
The CDF intermediate silicon layers detector
Energy Technology Data Exchange (ETDEWEB)
The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.
1999-11-01
Energy Technology Data Exchange (ETDEWEB)
Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.
2005-01-01
Is cold better ? - exploring the feasibility of liquid-helium-cooled optics.
Energy Technology Data Exchange (ETDEWEB)
Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.
1999-09-30
Application of neutron transmutation doping method to initially p-type silicon material
British Library Electronic Table of Contents (United Kingdom)
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...
2009-01-01
Vacuum-plasma treatment induced modification of the surface of high-speed steel cutting tools
International Nuclear Information System (INIS)
The possibility of surface modification of high-speed steel cutting tool by means of vacuum-plasma treatment including ion nitriding in gas plasma followed by the deposition of wear resistant (Ti, Al)N coatings in metal-gas plasma of a vacuum arc discharge is studied. The regularities of nitrided layer formation and the structure of these layers under various operation conditions of cutting tool are investigated. Optimum conditions of vacuum-plasma treatment providing the best wear resistance of cutting are determined
Tubular packs Mo-AlN-Mo: long-term thermal and corrosion resistance
International Nuclear Information System (INIS)
Study results on long-term thermal and corrosion resistance of packs with electro-insulation layer of aluminium nitride are presented. Structural changes of nitride ceramics and contact zones between metal and ceramics are considered. It is shown that multilayer metallo-ceramic packs, manufactured by gas-phase technology have high electro- and thermophysical properties, high thermal and corrosion resistance relative to cesium vapor, vacuum density as well as high thermo-resistance. 8 refs., 4 figs.
Residual Stress Field Analysis and Prediction in Nitrided Tool Steel
British Library Electronic Table of Contents (United Kingdom)
Residual stresses are present in engineering components as an unintended consequence of manufacturing processes, but they are also deliberately introduced to beneficial effect during surface engineering procedures. Plasma nitriding is a process of particular importance for forming tools and dies, giving significant advantages in wear, and fatigue resistance through the generation of near-surface compressive residual stresses. A precise knowledge of the level and distribution of residual stresses that exist in engineering components is necessary for an accurate design and prediction of a component's fatigue resistance. However, measurement of residual stresses is not always possible, which is especially true for forming tools. Therefore, other methods for residual stress evaluation and pred...
2011-01-01
Proton exchange membrane fuel cells with chromium nitridenanocrystals as electrocatalysts
Energy Technology Data Exchange (ETDEWEB)
Polymer electrolyte membrane fuel cells (PEMFCs) are energy conversion devices that produce electricity from a supply of fuel, such as hydrogen. One of the major challenges in achieving efficient energy conversion is the development of cost-effective materials that can act as electrocatalysts for PEMFCs. In this letter, we demonstrate that, instead of conventional noble metals, such as platinum, chromium nitride nanocrystals of fcc structure exhibit attractive catalytic activity for PEMFCs. Device testing indicates good stability of nitride nanocrystals in low temperature fuel cell operational environment.
2007-07-01
On the hydrogen etching mechanism in plasma nitriding of metals
International Nuclear Information System (INIS)
Iron alloys and aluminum were nitrogen implanted in a controlled oxygen atmosphere and the role of hydrogen on the surface etching mechanisms studied. The surface composition was analyzed by in situ photoemission electron spectroscopy (XPS). In iron alloys, hydrogen strongly etches oxygen, improving nitrogen retention on the surface. On the other hand, hydrogen removes nitrogen from aluminum surfaces, with a deleterious effect on the nitriding effectiveness. The oxygen removal in iron alloys is associated with the catalytic effect of electrons in d-orbitals and the nitrogen removal in aluminum is associated with a steric effect.
2006-12-15
International Nuclear Information System (INIS)
A mixture of powders of silica and aluminum nitride is subjected to high-energy ball milling for different milling times. This material is subsequently compacted by uniaxial pressing and sintered at 1450 deg. C. The resulting pellets are crushed and analysed by X-ray diffraction. For short milling times, the amount of phase transformation is minimal and the resulting material mostly consists of cristobalite and aluminum nitride. For long milling times, nanocrystalline #beta#-SiAl_2O_2N_2 is mainly produced.
2005-04-05
Glow Discharge Plasma Nitriding of AISI 304 Stainless Steel
International Nuclear Information System (INIS)
Glow discharge plasma nitriding of AISI 304 austenitic stainless steel has been carried out for different processing time under optimum discharge conditions established by spectroscopic analysis. The treated samples were analysed by X-ray diffraction (XRD) to explore the changes induced in the crystallographic structure. The XRD pattern confirmed the formation of an expanded austenite phase (#gamma#_N) owing to incorporation of nitrogen as an interstitial solid solution in the iron lattice. A Vickers microhardness tester was used to evaluate the surface hardness as a function of indentation depth (#mu#m). The results showed clear evidence of surface changes with substantial increase in surface hardness.
2007-08-01
Adsorption properties of #alpha#-modification of boron nitride
International Nuclear Information System (INIS)
The adsorption properties of four samples of the #alpha#-modification of boron nitride (#alpha#-BN) were investigated by the gas-chromatographic method. According to the electron microscopy data, the #alpha#-BN particles possess the shape of thin plates. An #alpha#-BN sample prepared from magnesium polyboride, is the most uniform adsorbent. For a series of n-alkanes, benzene, and alkyl benzenes, by testing the #alpha#-BN samples one has obtained the retained volumes (Henry constants) and the values of the differential adsorption heat, which are close to those of the surface zero filling. These thermodynamic characteristics of adsorption have shown that the #alpha#-BN, line the graphitized thermal carbon black, is not a specific adsorbent.
Wear and friction behaviour of duplex-treated AISI 4140 steel
Energy Technology Data Exchange (ETDEWEB)
In this study samples of AISI 4140 steel were pretreated by plasma nitriding and coated with two different physical vapour deposited coatings (TiN and TiAlN). A hardened AISI 4140 sample and a coated sample were also included in the investigation. To examine the influence of the nitrided zone on the performance of the coating-substrate composite, two different nitriding conditions - a conventional 25% N{sub 2} and an N{sub 2}-poor gas mixture - were used. The specimens were investigated with respect to their microhardness, surface roughness, scratch adhesion and dry sliding wear resistance. Wear tests in which the duplex-treated pins were mated to hardened ball bearing steel discs were performed in a pin-on-disc machine under dry sliding conditions. Metallography, scanning electron microscopy and profilometry were used to analyse the worn surfaces in order to determine the dominant friction and wear characteristics of the ...
1999-11-01
Energy Technology Data Exchange (ETDEWEB)
A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...
2006-07-30
International Nuclear Information System (INIS)
Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...
Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon
Energy Technology Data Exchange (ETDEWEB)
We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...
2003-12-31
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films
International Nuclear Information System (INIS)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films
Energy Technology Data Exchange (ETDEWEB)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
1993-07-16
Characterization of arsenic dose loss at the Si/SiO{sub 2} interface
Energy Technology Data Exchange (ETDEWEB)
Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...
2000-03-01
Characterization of arsenic dose loss at the Si/SiO_2 interface
International Nuclear Information System (INIS)
Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...
2000-03-01
Ten-nanometer surface intrusions in room temperature silicon
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.
2002-01-01
Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system
Energy Technology Data Exchange (ETDEWEB)
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
2005-12-15
Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system
International Nuclear Information System (INIS)
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
2005-12-15
Selective emitters for thermophotovoltaic solar energy conversion
Energy Technology Data Exchange (ETDEWEB)
The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.
1983-12-01
Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing
International Nuclear Information System (INIS)
In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.
2005-11-14
Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.
1997-09-01
Hall mobility minimum of temperature dependence in polycrystalline silicon
Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.
1998-01-01
Energy Technology Data Exchange (ETDEWEB)
We have investigated the effect of plasma nitriding and plasma nitrocarburizing on the microstructure and properties of electroplated chromium. Plasma nitriding and plasma nitrocarburizing are applied to 15-100 [mu]m thick electroplated hard chromium coatings to increase both the wear and the corrosion resistance. The properties of the plasma-modified hard chromium layers are characterized by measuring the wear resistance with a Taber wear tester and the corrosion resistance with a salt spray fog test. Cyclic voltammetry is performed in a standard electrochemical cell using a 0.5 M H[sub 2]SO[sub 4] solution acidified to pH 0.3. The compound layer after plasma nitriding consists of CrN and Cr[sub 2]N with a maximum hardness of about 1100 HK[sub 0.01]. After plasma nitrocarburizing, Cr[sub 3]C[sub 2] and Cr[sub 7]C[sub 3] are formed. After plasma nitrocarburizing, the maximum hardness is increased up to 2200 HK[sub 0.01]. ...
1999-02-01
International Nuclear Information System (INIS)
Thermo-reactive diffusion chromizing followed by pulsed plasma nitriding were carried out on AISI 52100 and 8620 bearing steels. The chromized samples were pulse-plasma nitrided for 5 h at 500 deg. C in various N_2-H_2 gas mixtures. The coated steels were characterized using scanning electron microscopy, X-ray diffraction and microhardness testing. The unlubricated wear behaviors of only chromized and duplex treated steels were investigated in ball-on-disc system tests at room temperature. X-ray diffraction patterns of the duplex treated samples containing H_2 indicated the formation of dominant CrN and Cr_2N nitrides as well as the formation of Cr_3C_2 and Cr_7C_3 carbides. Gas mixtures in the plasma nitriding, which was performed after chromizing, have a significant influence on the wear rate of the duplex treated steels. The wear and friction tests showed that the lowest friction coefficient and wear ...
2008-12-01
Whispering gallery modes in silicon-nanocrystal-coated silica microspheres
Energy Technology Data Exchange (ETDEWEB)
Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.
2007-10-15
International Nuclear Information System (INIS)
(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,
Surface activity and water repellency properties of cleavable-modified silicone surfactants
British Library Electronic Table of Contents (United Kingdom)
A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...
2006-01-01
Summary of NSF Workshop on Research Opportunities in Manufacturing in the Process Industries
... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...
Studies of relativistic heavy ion collisions at the AGS (Experiment 814)
Energy Technology Data Exchange (ETDEWEB)
This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)
1990-01-01
Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides
International Nuclear Information System (INIS)
Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).
Role of MeV ion implantation in limiting transient enhanced diffusion of boron atoms in silicon
International Nuclear Information System (INIS)
English Jul 2001 p. 143-144 China Liu Changlong Academia Sinica,
2001-07-01
International Nuclear Information System (INIS)
This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).
PolyRAD Space Radiation Shield for Commercial-Off-The
Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...
Phonon - Drag Thermopo wer in Dilute Copper Alloys - NASA ...
ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...
Energy Technology Data Exchange (ETDEWEB)
In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...
2003-08-01
Investigation of lattice strains in layered structures containing porous silicon
International Nuclear Information System (INIS)
Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)
2001-09-23
Integrated Optics Anisotropic Waveguides and Devices
... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...
1989-04-30
International Nuclear Information System (INIS)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...
2002-01-01
Effect of recoil implantation of oxygen on boron enhanced diffusion in silicon
International Nuclear Information System (INIS)
In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.
1989-04-25
Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems
Energy Technology Data Exchange (ETDEWEB)
We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.
2006-03-06
International Nuclear Information System (INIS)
The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).
Energy Technology Data Exchange (ETDEWEB)
A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...
1997-07-01
Chromium-Manganese Nonmagnetic Steels
International Science & Technology Center (ISTC)
Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures
Boron diffusion in amorphous silicon
Energy Technology Data Exchange (ETDEWEB)
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.
2005-12-05
Boron diffusion in amorphous silicon
International Nuclear Information System (INIS)
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.
2005-12-05
Energy Technology Data Exchange (ETDEWEB)
Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).
1991-11-01
Acrobat Distiller, Job 7 - GLTRS - NASA
into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...
8 - NASA Technical Reports Server
Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...
Energy Technology Data Exchange (ETDEWEB)
Titanium alloys are characterized by poor tribological properties, and the traditional use of titanium alloys has been restricted to nontribological applications. The deposition of a well adherent diamond coating is a promising way to solve this problem. In this study, the tribological properties of diamond-coated titanium were studied using a pin-on-disk tribometer, and the results were compared with those of pure titanium and plasma nitrided titanium. The tribological behavior of pure titanium was characterized by high coefficient of friction and rapid wear of materials. Plasma nitriding improved the wear resistance only under low normal load; however, this hardened layer was not efficient in improving the wear resistance and the friction properties under high normal load. Diamond coating on pure titanium improved the wear resistance of titanium significantly. Surface profilometry measurement indicated that little or no wear of the diamond ...
1999-12-01
Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy
Energy Technology Data Exchange (ETDEWEB)
Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly developed inductively ...
1997-09-01
Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy
International Nuclear Information System (INIS)
Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly developed inductively ...
1996-09-15
International Nuclear Information System (INIS)
In this work we report a study of the induced changes in structure and corrosion behavior of martensitic stainless steels nitrided by plasma immersion ion implantation (PI"3) at different previous heat treatments. The samples were characterized by x-ray diffraction and glancing angle x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and potentiodynamic measurements. Depending on the proportion of retained austenite in the unimplanted material, different phase transformations are obtained at lower and intermediate temperatures of nitrogen implantation. At higher temperatures, the great mobility of the chromium yields CrN segregations like spots in random distribution, and the #alpha#"'-martensite is degraded to#alpha#-Fe (ferrite). The nitrided layer thickness follows a fairly linear relationship with the temperature and a parabolic law with the process time. The corrosion resistance depends strongly on ...
2006-09-01
Energy Technology Data Exchange (ETDEWEB)
Plasma nitriding of a Ti substrate is carried out under a low ambient pressure below 3kPa, and a plasma torch is prepared on a trial basis which is provided with a supersonic expansion nozzle considered to expand plasma jet optimally and to be effective for suppressing the occurrence of shock wave. The system used for the study is provided with a specimen holder having the function of adjusting the distance between the nozzle outlet and the substrate inside the vacuum chamber which is provided with a plasma torch in the flange member. The plasma torch is so structured that a supersonic expansion nozzle can be installed at the tip of the plasma torch. In this process wherein plasma jet is employed, hard nitrided layer can be formed by plasma irradiation for a short time even under such low pressure as less than 3kPa by setting adequate experimental conditions. It is made clear that the use of a supersonic nozzle corresponding to the internal ...
1997-07-01
Understanding the influence of interfacial structures on the nanoarchitecture mechanical properties is of particular importance for its mechanical applications. Due to a small size of constituting nanostructural units and a consequently high volume ratio of such interfacial regions, this question becomes crucial for the overall mechanical performance. Boron nitride bamboo-like nanotubes, called hereafter boron nitride nanobamboos (BNNBs), are composed of short BN nanotubular segments with specific interfaces at the bamboo-shaped joints. In this work, the mechanical properties of such structures are investigated by using direct in situ transmission electron microscopy tensile tests and molecular dynamics simulations. The mechanical properties and deformation behaviors are correlated with the interfacial structure under atomic resolution, and a geometry strengthening effect is clearly demonstrated. Due to the interlocked joint interfacial ...
2011-08-10
Heteroepitaxial growth of cubic boron nitride single crystal on diamond seed under high pressure
International Nuclear Information System (INIS)
Single crystal cubic boron nitride (cBN) was heteroepitaxially grown on a seed crystal of diamond under static high pressure and high temperature at 5.5GPa and 1,600--1,700 C, respectively, for 10--100 hour. A temperature gradient method was employed for the crystal growth by using lithium boron nitride as a solvent. Initial growth feature of cBN crystal was found on the diamond seed surface after the growing time of 10 minutes. The nucleation sites of the crystals seem to be near the etch pits on the diamond surface which were introduced by the surface dissolution by the solvent for cBN growth. Two types of growth features, island and step growth were typically shown on the surface. It can be seen that grown crystal appearing as a (111) nitrogen face was exhibited with the step growth feature, while the (11n) face exhibited the island growth feature. Considering the growth process under constant P-T growing condition, growth rate of cBN ...
1997-04-04
Effects of relative thickness of the duplex-treated layer on surface properties of AlSl H13 steel
Energy Technology Data Exchange (ETDEWEB)
A duplex surface treatment technique based on calorizing and plasma nitriding was developed to improve the wear and oxidation resistance of H13 steel at high temperatures. The effects of the relative thickness of the calorized layer to the depth of plasma nitriding on the wear and oxidation properties at temperatures up to 900 C were investigated in this work. High-temperature wear tests were performed at 500 C with dry conditions in open air using a ball-on-disk type tribotest machine. Isothermal oxidation tests were performed at 900 C for up to 100 h under controlled atmosphere. The results indicated that the specimens with a calorized layer as an intermediate phase between the surface duplex layer and the base metal showed higher wear and oxidation resistance than the specimens with a nitrided layer alone. During exposure to elevated temperatures, the aluminum in the calorized layer diffused to the surface and formed an ...
1997-10-01
International Nuclear Information System (INIS)
The 2-step low temperature plasma processes (the combined carburizing and post-nitriding) were carried out for improving both the surface hardness and corrosion resistance of AISI 316L stainless steel. The effects of processing time and temperature on the surface properties during nitriding step were investigated. The expanded austenite (#gamma#N)was formed on all of the treated surface. The thickness of #gamma#N was increased up to about 20 #mu#m and the thickness of entire hardened layer was determined to be about 40 #mu#m. The surface hardness reached up to 1,200 HV_0_._1 which is about 5 times higher than that of untreated sample (250 HV_0_._1). The thickness of #gamma#N and concentration of N on the surface were increased with increasing processing time and temperature. The corrosion resistance in 2-step low temperature plasma processed austenitic stainless steels was enhanced more than that in the untreated austenitic stainless steels due ...
2008-06-01
Aluminum nitride precipitation and texture development in batch-annealed bake-hardening steel
Energy Technology Data Exchange (ETDEWEB)
A model is presented that describes the development of texture during the production process of bake-hardening steel recrystallized in a batch-annealing furnace. Proper conditions are analyzed to generate a pronounced {gamma}-fiber texture and a pancake microstructure that shows superior deep drawability. The {gamma}-fiber texture is assumed to be caused by the interaction between tertiary precipitating aluminum nitride particles and the recrystallization process during heating in the furnace. Deep drawability is presented in terms of the logarithmic {gamma}- and {alpha}-fiber X-ray intensity ratio. The computer simulation of the coupled aluminum nitride precipitation and recrystallization kinetics is based on an iterative procedure. A comparison between simulation results and available experimental data proves the ability of the model to predict the final deep drawability, taking into account the initial aluminum and nitrogen contents, the ...
1999-06-01
Precise characterisation of nanochannels in track etched membranes by SAXS and SANS
Energy Technology Data Exchange (ETDEWEB)
Poster session: Abstract is full text. Track membranes are thin polymer foils irradiated by heavy ions. The defects created by the heavy ions are located along the ions trajectory, the track. It is possible to open channels by etching with a chemical agent. These channels are very uniform. Small Angle Scattering (of X rays and neutrons) give global information about the characteristics of the channel shape. As the nanochannels are strictly parallel, an excellent sample orientation is required to obtain interpretable spectra. Then shoulders due to the oscillations of the Bessel function (radial part of the channel shape Fourier transform) are easily seen in the scattered intensity in the PXY data treatment software of SAS spectra allow to determine the channel diameter with its dispersion law, to demonstrate the existence of a wall thickness with a linearly varying density, and to assess the roughness. PXY can also detect non cylindric shapes like single or double cones or spindles. ...
2003-05-01
Enthalpy relaxation properties of the ethylene glycol (EG) aqueous solutions confined within silica-gel void spaces of 1.1 nm in the average void thickness and 6, 12 and 52 nm in their average diameters were examined by an adiabatic calorimetry to understand the glass transition behavior of the solutions and the rearrangement processes of the molecules. The glass transition temperature Tg of EG was found to decrease with adding the water molecules which are mobile under the condition lacking in the full hydrogen-bond network. Meanwhile, the Tg in the water-rich region showed a rise towards pure water; after a phase separation in a 25 mol% (x = 0.25) EG solution, the Tg was 160 K which was higher than that derived by extrapolating the composition dependence to pure water. The Tg = 160 K is the same as observed in the pure water confined within 1.1 nm voids; this indicates the validity of the interpretation that the glass transition at 160 K of the confined water originates from the ...
2008-02-01
Development of 40m SANS and Its Utilization Techniques
Energy Technology Data Exchange (ETDEWEB)
Small angle neutron scattering (SANS) has been a very powerful tool to study nanoscale (1-100 nm) bulk structures in various materials such as polymer, self assembled materials, nano-porous materials, nano-magnetic materials, metal and ceramics. Understanding the importance of the SANS instrument, the 8m SANS instrument was installed at the CN beam port of HANARO in 2001. However, without having a cold neutron source, the beam intensity is fairly low and the Q-range is rather limited due to short instrument length. In July 1, 2003, therefore, the HANARO cold neutron research facility project was launched and a state of the art 40m SANS instrument was selected as top-priority instrument. The development of the 40m SANS instrument was completed as a joint project between Korea Advanced Institute of Science and Technology and the HANARO in 2010. Here, we report the specification of a state of art 40m SANS instrument at HANARO
2010-06-15
International Nuclear Information System (INIS)
The effect of W and V on the high temperature strength properties of 12%Cr-15%Mn austenitic steels was studied from the view point of precipitation hardening and internal stress. The contribution of W addition to the tensile and creep-rupture strength was not so large. By contrast the combined addition of W and V increased the strength considerably. These are resulted from the precipitation of fine vanadium nitride (VN) within grains and the enhancement of M_2_3C_6 type carbide precipitation at grain boundaries. The V added material had large internal stress value which is considered to be due to dislocation movement disturbed by fine vanadium nitrides. (author).
International Nuclear Information System (INIS)
The temperature dependences of the Grueneisen parameter, heat capacity, bulk modulus and linear thermal expansion coefficient of sixteen III-V zincblende compounds are studied by first-principles response-function calculations. The fundamental relationships among these physical parameters are explored. Negative thermal expansions at lower temperature are found in most of these III-V phases except for the nitrides and boron compounds. By analyzing the cell-volume dependences of the phonon spectrum, it is found that the phases with a negative thermal expansion show a significant acoustic phonon weakening at the X-point in their phonon dispersion, while slight weakening is only seen around the L-point for those boron phases. There is no sign of phonon weakening in the nitrides. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
2009-07-01
Magnetic layer formation on plasma nitrided CoCrMo alloy
British Library Electronic Table of Contents (United Kingdom)
In this study structural and magnetic character of the expanded austenite phase (gN) layer formed on a medical grade CoCrMo alloy by a low-pressure Radio-Frequency plasma nitriding process was investigated. The formation of the expanded austenite phase is facilitated at a substrate temperature near 400^oC for 1, 2, 4, 6 and 20h under a gas mixture of 60% N2-40% H2. The magnetic state of the gN layers was determined by a surface sensitive technique, magneto-optic Kerr effect (MOKE), and with a scanning probe microscope in magnetic force mode (MFM). Strong evidence for the ferromagnetic nature of the gN-(Co,Cr,Mo) phase is provided by the observation of stripe domain structures and the hysteresis loops. The ferromagnetic state for the gN phase observed here is mainly linked to large lattice ...
2011-01-01
Ion beam induced charge imaging of epitaxial GaN detectors
Energy Technology Data Exchange (ETDEWEB)
We report the use of ion beam induced charge imaging to characterise the charge signal uniformity of epitaxial gallium nitride radiation detectors. The detectors were fabricated from 2 {mu}m thick semi-insulating gallium nitride, grown by MOCVD on a sapphire substrate. A carrier concentration of 1.4x10{sup 15} cm{sup -3} was measured using capacitance-voltage measurements. Ion beam induced charge imaging was carried out with a 2 MeV alpha particle beam focussed to a 3 {mu}m diameter and raster scanned across the device. The resulting ion beam images show excellent charge signal uniformity in this material with no evidence of material defects or polycrystalline structure on the micrometer length scale. No evidence of charge signal trapping was observed in these devices.
2004-09-21
International Nuclear Information System (INIS)
Chromium nitride thin films were deposited on SA-304 stainless steel substrates by using direct-current reactive magnetron sputtering. The influence of process conditions such as nitrogen content in the fed gas, substrate temperature, and different sputtering gases on microstructural characteristics of the films was investigated. The films showed (200) preferred orientation at low nitrogen content (< 30%) in the fed gas. The formation of Cr_2N and CrN phases was observed when 30% and 40% N_2 were used, with a balance of Ar, respectively. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the morphology and surface topography of the thin films, respectively. Microhardness tests showed a maximum hardness of 16.95 GPa for the 30% nitrogen content.
2010-08-02
International Nuclear Information System (INIS)
Nano structured carbon nitride thin films were deposited at different RF powers in the range of 50 W to 225 W and constant gas ratio of (argon: nitrogen) Ar:N_2 by RF magnetron sputtering. The atomic percentage of Nitrogen: Carbon (N/C) content and impedance of the films increased from 14.36% to 22.31% and 9 x 10"-"1 #OMEGA# to 7 x 10"5 #OMEGA# respectively with increase in RF power. The hardness of the deposited films increased from 3.12 GPa to 13.12 GPa. The increase in sp"3 hybridized C-N sites and decrease of grain size with increase in RF power is responsible for such variation of observed mechanical and electrical properties.
2010-10-01
Bulk and surface electronic structure of hexagonal boron nitride
International Nuclear Information System (INIS)
Accurate full-potential self-consistent linearized augmented-plane-wave (FLAPW) calculations have been carried out for hexagonal boron nitride. The resulting energy-band structure indicates that this material is an indirect-gap insulator and shows the existence of two unoccupied interlayer bands, similar to those found in graphite and graphite intercalation compounds. Chemical bonding is mainly covalent, with a small charge transfer towards the nitrogen atoms. Moreover, model-potential calculations, based on first-principles FLAPW wave functions and potentials, have been used to study slabs of thickness up to 35 layers. Contrary to the case of graphite, our results do not provide evidence of surface states associated with the interlayer bands.
Theoretical transition energies, lifetimes and fluorescence yields of multiply ionized silicon
Energy Technology Data Exchange (ETDEWEB)
Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.
1982-01-01
Energy Technology Data Exchange (ETDEWEB)
We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.
1994-06-01
Study of transient enhanced dopant diffusion in silicon and proposed limiting methods
International Nuclear Information System (INIS)
The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed
2001-09-01
Soft X-ray spectra of amorphous hydrogenated silicon
Energy Technology Data Exchange (ETDEWEB)
The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.
1985-06-01
Silicone-rubber washers soothe vibrating transmission lines
Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.
1965-01-01
Silicon nanopowder as active material for hybrid electrodes of lithium-ion batteries
British Library Electronic Table of Contents (United Kingdom)
Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.
2011-01-01
On the theory of transient enhanced diffusion in boron-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
1991-01-01
On the theory of transient enhanced diffusion in boron-implanted silicon
International Nuclear Information System (INIS)
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
International Nuclear Information System (INIS)
A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.
1988-12-09
The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.
1999-01-01
Determination of the conversion factor for infrared measurements of carbon in silicon
Energy Technology Data Exchange (ETDEWEB)
The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.
1986-10-01
Boron uphill diffusion during ultrashallow junction formation
International Nuclear Information System (INIS)
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
2003-05-26
Application of Pd silicide in the process of silicon detectors
Energy Technology Data Exchange (ETDEWEB)
A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.
1990-04-01
Anomalous sputter yields due to cascade mixing
Energy Technology Data Exchange (ETDEWEB)
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
1980-05-01
Anomalous sputter yields due to cascade mixing
International Nuclear Information System (INIS)
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
Energy Technology Data Exchange (ETDEWEB)
The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'
2007-08-01
International Nuclear Information System (INIS)
In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...
2004-06-01
Radiation-induced segregation in light-ion bombarded Ni-8% Si
Energy Technology Data Exchange (ETDEWEB)
Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...
1986-01-01
British Library Electronic Table of Contents (United Kingdom)
Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...
2011-01-01
Electrochemical characterisation of patterned carbon nanotube electrodes on silane modified silicon
Energy Technology Data Exchange (ETDEWEB)
Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...
2008-07-20
Construction and Calibration of the Laser Alignment System for the CMS Tracker
The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...
2006-01-01
A plasma process for the synthesis of cubic-shaped silicon nanocrystals for nanoelectronic devices
International Nuclear Information System (INIS)
Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...
2007-04-21
The influence of process gas characteristics on the properties of plasma nitrided steel
Energy Technology Data Exchange (ETDEWEB)
This study attempts to elucidate some of the effects of adding argon, neon and hydrogen to low pressure thermionically supported discharges used for plasma nitriding AISI M2 steel substrates. Four runs were performed at the same substrate temperature (550 C) and bias voltage (500 V), using the following gas mixtures: 8% N{sub 2} in Ar, 8% N{sub 2} in Ne, N{sub 2}+H{sub 2} in equal proportions, and N{sub 2} only. By careful control of the discharge parameters, most of the bombardment energy was transported to the substrates by 500 eV ions in all cases; these were mainly Ar{sup +} ions in the N{sub 2}+Ar run and N{sub 2}{sup +} ions in the other runs, notably by the action of Penning ionization in the N{sub 2}+Ne run. We found that the surface hardness was not significantly influenced by the type of ion delivering the bombardment energy, although we suggest that ions would need sufficient mass to cause (for example) sputtering, if the substrate is susceptible to ...
1995-12-01
Energy Technology Data Exchange (ETDEWEB)
In this paper, we report on a comparative study of active screen plasma nitriding (ASPN) and conventional dc plasma nitriding (CPN) behavior of 30CrNiMo8 low-alloy steel that has been examined under various process conditions. The process variables included active screen setup parameters (screen and iron plate top lids placed on the screen setup with 8 mm of hole size), treatment temperature (550 and 580 deg. C), gas mixture (75/25 and 25/75 of N{sub 2}/H{sub 2}) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the diffusion zone and compound layer were studied by X-ray diffraction (XRD), microhardness tests, light optical microscopy and scanning electron microscopy (SEM). It was observed that treated sample surfaces in both CPN and ASPN methods consist of {gamma}' and {epsilon} phases, and while the nitriding time and/or temperature increases, the intensity of {epsilon} ...
2007-12-30
International Nuclear Information System (INIS)
In this paper, we report on a comparative study of active screen plasma nitriding (ASPN) and conventional dc plasma nitriding (CPN) behavior of 30CrNiMo8 low-alloy steel that has been examined under various process conditions. The process variables included active screen setup parameters (screen and iron plate top lids placed on the screen setup with 8 mm of hole size), treatment temperature (550 and 580 deg. C), gas mixture (75/25 and 25/75 of N_2/H_2) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the diffusion zone and compound layer were studied by X-ray diffraction (XRD), microhardness tests, light optical microscopy and scanning electron microscopy (SEM). It was observed that treated sample surfaces in both CPN and ASPN methods consist of #gamma#' and #epsilon# phases, and while the nitriding time and/or temperature increases, the intensity of #epsilon# phase in the ...
2007-12-30
Study of nanocrystallization in FINEMET alloy by active screen plasma nitriding
International Nuclear Information System (INIS)
The nanocrystallization process of amorphous Fe_7_3_._5Si_1_3_._5B_9Nb_3Cu_1 was investigated by active screen plasma nitriding (ASPN) treatment at temperatures ranging from 410 "oC to 560 "oC for 3 h in two gas mixtures of 75% N_2-25% H_2 and 25% N_2-75% H_2 at 5 mbar atmosphere. The amorphous ribbons were then annealed under vacuum at the same time and temperatures mentioned above. The structure of the samples was analyzed using various techniques such as X-ray diffraction (XRD), atomic force microscopy (AFM) and differential scanning calorimetry (DSC). Microhardness measurements, electrical resistivity and Vibrating Sample Magnetometer (VSM) were used to study mechanical, electrical and magnetic properties of the samples, respectively. It was observed that the ASPN treatment leads to finer grain size and higher crystalline volume fraction and modifies the structural features of Fe(Si) phase. The Fe(Si) lattice parameter for the nitrided ...
2010-02-18
Reactive metal brazing of aluminum nitride
Energy Technology Data Exchange (ETDEWEB)
The addition of titanium to eutectic braze compositions causes these alloys to readily wet and bond to A1N ceramics. Electron microscopic characterizations of the metal-ceramic interfaces reveal the presence of TiN, along with other Ti- and Al-containing phases. The formation of such interfacial reaction products is an additional thermodynamic driving force for the creation of useful metal-ceramic bonds. 12 refs., 4 figs., 1 tab.
1990-01-01
Oxygen, hydrogen, and deuterium effects on plasma nitriding of metal alloys
International Nuclear Information System (INIS)
We report the oxygen, hydrogen, and deuterium effects on nitrogen implantation of stainless steel. Oxygen is absorbed on the surface creating a potential barrier and diminishing the nitrogen retention. Deuterium removes more oxygen from the surface than hydrogen, augmenting the nitrogen chemical potential and yielding faster nitrogen diffusion into the bulk material.
2006-04-01
Microwave Combustion and Sintering Without Isostatic Pressure
Energy Technology Data Exchange (ETDEWEB)
This investigation involves a study of the influence of key processing parameters on the heating of materials using microwave energy. Selective and localized heating characteristics of microwaves will be utilized in the sintering of ceramics without hydrostatic pressure. In addition, combustion synthesis will be studied for the production of powders, carbides, and nitrides by combining two or more solids or a solid and a gas to form new materials. The insight gained from the interaction of microwaves with various materials will be utilized in the mobilization and subsequent redeposition of uranium.
1998-10-20
Implantation-plasma treatment of martensitic steel and titanium alloy
Energy Technology Data Exchange (ETDEWEB)
One of the effective methods of deep modification of the surface of steels and alloys is the combination of ion implantation and plasma nitriding. In this work, the long-range effect is demonstrated in the case of combination of the effect of high- and low-energy ions of nitrogen on a martensitic steel for each ion implantation is usually not effective, and a titanium alloy used widely in industry.
2001-07-01
The rate-limiting mechanism of transition metal gettering in multicrystalline silicon
Energy Technology Data Exchange (ETDEWEB)
Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...
1997-04-01
Silicon purification melting for photovoltaic applications
Energy Technology Data Exchange (ETDEWEB)
The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...
2000-04-01
Energy Technology Data Exchange (ETDEWEB)
Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...
1980-03-01
A kinetic and mechanistic study of the oxidation of silicon- and thin metal silicide layers
International Nuclear Information System (INIS)
The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...
British Library Electronic Table of Contents (United Kingdom)
In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...
2006-01-01
Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
1985-08-01
Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon
International Nuclear Information System (INIS)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
Energy Technology Data Exchange (ETDEWEB)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
1998-05-01
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
International Nuclear Information System (INIS)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
1998-05-01
The formation of aluminum phosphide in aluminum melt treated with an Al-Fe-P inoculant addition
Energy Technology Data Exchange (ETDEWEB)
The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)
2001-04-01
British Library Electronic Table of Contents (United Kingdom)
The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...
2011-01-01
Solar thermophotovoltaic (STPV) system with thermal energy storage
Energy Technology Data Exchange (ETDEWEB)
A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}
1996-02-01
Schottky barrier modulation on silicon nanowires
Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.
2007-03-26
SSRM characterisation of FIB induced damage in silicon
International Nuclear Information System (INIS)
Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.
2008-03-01
Response characteristics of base-isolated structure with silicone rubber bearings
International Nuclear Information System (INIS)
More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992
1993-08-15
Properties of low residual stress silicon oxynitrides used as a sacrificial layer
Energy Technology Data Exchange (ETDEWEB)
Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.
2000-01-04
Prediction of transient-enhanced diffusion during rapid thermal annealing of ion-implanted silicon
International Nuclear Information System (INIS)
There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).
1985-03-01
International Nuclear Information System (INIS)
In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.
1999-01-01
Photoluminescence in large fluence radiation irradiated space silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)
1997-03-01
Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure
International Nuclear Information System (INIS)
Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).
2011-07-07
Nano silicon for lithium-ion batteries
Energy Technology Data Exchange (ETDEWEB)
New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)
2006-11-12
A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).
1977-01-01
Material-induced shunts in multicrystalline silicon solar cells
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-15
Material-induced shunts in multicrystalline silicon solar cells
International Nuclear Information System (INIS)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-01
Material-induced shunts in multicrystalline silicon solar cells
British Library Electronic Table of Contents (United Kingdom)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-01-01
British Library Electronic Table of Contents (United Kingdom)
Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.
1998-09-01
International Nuclear Information System (INIS)
The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.
Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
Energy Technology Data Exchange (ETDEWEB)
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
2004-12-15
Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
International Nuclear Information System (INIS)
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
2004-12-15
The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.
A Versatile Evaporative Cooling System Designed for Use in an Elementary Particle Detector
British Library Electronic Table of Contents (United Kingdom)
An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...
2007-01-01
Wafer and Solar Cell Characterization by GT-PVSCAN6000
The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.
2002-08-01
Transient enhanced diffusion of boron in silicon: The interstitial flux
Energy Technology Data Exchange (ETDEWEB)
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...
1997-11-01
Transient enhanced diffusion of boron in silicon: The interstitial flux
International Nuclear Information System (INIS)
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...
1996-12-02
Thermal stability and acid resistance of aluminosilicophosphate zeolites
Energy Technology Data Exchange (ETDEWEB)
By isomorphous replacement of silicon by phosphorus the authors have synthesized crystalline aluminosilicophosphates with structures of the zeolites type A and faujasite. They determine the adsorption capacity of specimens treated at 575-1275/sup 0/K. They show that the thermal stability and acid resistance of aluminosilicophosphates depend on the quantity of phosphorus in their structure.
1987-04-01
Energy Technology Data Exchange (ETDEWEB)
As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...
1998-07-01
Observed energy dependence of Fano factor in silicon at hard X-ray energies
Energy Technology Data Exchange (ETDEWEB)
An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.
1999-03-01
NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference
Energy Technology Data Exchange (ETDEWEB)
Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.
1993-05-01
Method of restoring degraded solar cells
Energy Technology Data Exchange (ETDEWEB)
Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.
1983-01-01
Metallization of large silicon wafers. Final report
A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
Energy Technology Data Exchange (ETDEWEB)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} ...
2004-11-15
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
International Nuclear Information System (INIS)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...
2004-11-01
J4P Evaluation of Externally Heated Pulsed MPD Thruster Cathodes
twenty 350 V, 2.5 mF aluminum electrolytic capacitors with 10.8 mH inductors made of multi-strand wire. The PFN discharge was controlled using an silicon ...
Investigations into the nature of a silicoaluminophosphate with the faujasite structure
Energy Technology Data Exchange (ETDEWEB)
The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.
1987-04-29
Energy Technology Data Exchange (ETDEWEB)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...
2002-01-01
Energy Technology Data Exchange (ETDEWEB)
Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.
2004-06-30
International Nuclear Information System (INIS)
Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.
2004-06-30
INVESTIGATION OF GLASS-METAL COMPOSITE ...
... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...
1957-09-01
Evolution of surface roughness in silicon X-ray mirrors exposed to a low-energy ion beam
International Nuclear Information System (INIS)
The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...
2010-05-01
International Nuclear Information System (INIS)
Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At ...
1984-01-01
Energy Technology Data Exchange (ETDEWEB)
An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.
1982-01-01
Chromized/siliconized diffusion coatings for iron-base alloy by pack cementation
Energy Technology Data Exchange (ETDEWEB)
This paper reports that the co-deposition of chromium and silicon into a 2.25Cr-1.0Mo-0.15C steel, alloy 800, and type 304 stainless steel has been achieved using the pack cementation process. The ferritic coating produced on the 2.25 Cr-1.0Mo steel was approximately 225 {mu}m (9 mils) thick, whereas the inward diffusion of chromium and silicon produced a two-phase structure of ferrite and austenite for type 304. Chromium and silicon were incorporated into the austenitic solid solution upon diffusion into alloy 800. All coatings had approximately 25 to 35 wt% Cr and 2 to 3% Si at the surface. Cyclic oxidation testing in air of the coated 2.25Cr-1.0Mo steel (T = 700{degrees} C) and type 304 (T = 1035{degrees} C) showed a dramatic decrease in the oxidation kinetics compared to the original uncoated alloys. The cyclic oxidation of alloy 800 was also improved.
1991-09-01
Changes in colonic motility induced by sennosides in dogs: evidence of a prostaglandin mediation.
UK PubMed Central (United Kingdom)
The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available
1988-09-01
International Nuclear Information System (INIS)
An earlier representation of the radial distribution of dose about the path of a heavy ion in liquid water is modified and extended to include silicon, lithium fluoride, and sodium iodide. 6 refs., 5 figs., 1 tab.
1989-09-01
2005 NASA Executive Capability Roadmap Report
ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...
.N& 21762 - NASA Technical Report Server (NTRS)
of the supplier of pulled p-type silicon material. of G-6 and E 8 centers irradiated in the 1 t o 3 MeV range. tions w i l l be performed using the General ...
Energy Technology Data Exchange (ETDEWEB)
In the present work the effect of different surface conditions on plasma nitriding response of AISI M2 high speed steel was investigated. The plasma nitriding of ground and sandblasted samples and drills was performed at temperatures of 400 C and 500 C for two gas mixtures: 5 vol.% N{sub 2} and 76 vol.% N{sub 2} in hydrogen. Surface layers were characterized before and after plasma nitriding concerning the microstructure, roughness, microhardness, chemical composition, phase composition and residual stress states. Machining tests were carried out with drills during which drilling forces and flank wear have been measured. A significant effect of the surface state prior to nitriding on residual stress states and the properties of the nitrided layer and untreated core has been observed. Thinner nitrided layers on ground and sandblasted samples were attributed to ...
2003-01-01
Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.
1998-09-18
Simple integral screenprinting process for selective emitter polycrystalline silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.
1991-09-23
Energy Technology Data Exchange (ETDEWEB)
Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.
1996-12-01
Reactive sticking coefficients for silane and disilane on polycrystalline silicon
Energy Technology Data Exchange (ETDEWEB)
Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.
1988-04-15
Polysilicon TFT fabrication on plastic substrates
Energy Technology Data Exchange (ETDEWEB)
Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).
1997-08-06
Energy Technology Data Exchange (ETDEWEB)
One of the major scientific and technological challenges for the production of flexible organic electronic devices is the device protection against atmospheric molecule permeation, which causes corrosion reducing its operation and lifetime. In this work, Spectroscopic Ellipsometry has been implemented to investigate the influence of silicon dioxide nanoparticles on the optical properties of hybrid polymers. The spectra analysis revealed valuable information about the electronic and vibrational response as well as the cross-linking mechanisms of these materials. The correlation of the optical properties with the synthesis parameters and the barrier response will contribute towards their optimization in order to be used as high barrier coatings for flexible organic electronics applications.
2009-10-01
Observation of a surface peak in low energy implant depth profiles in silicon
Energy Technology Data Exchange (ETDEWEB)
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
1984-03-01
Energy Technology Data Exchange (ETDEWEB)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
1997-11-01
International Nuclear Information System (INIS)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
1996-12-02
Measurement of liquid xenon scintillation from heavy ions using a silicon photodiode
Energy Technology Data Exchange (ETDEWEB)
Scintillation light in liquid xenon excited by 100 MeV/n Al ions was detected with a home-made silicon photodiode. The diameter of the photodiode was 2 inch. The effective quantum efficiency was observed to be 22% for the wavelength of liquid xenon scintillation light (170 nm), while the effective quantum efficiency for 5.486 MeV alpha-particle excitation was 44%. An energy resolution of 0.5% rms was achieved for the energy deposition of 2.5 GeV in liquid xenon using a fast preamplifier ({approx equal} 20 ns). (orig.).
1991-11-15
Laser-assisted solar cell metallization processing. Quarterly report No. 6, March 1-June 30, 1985
Energy Technology Data Exchange (ETDEWEB)
A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.
1985-07-25
Development of low cost contacts to silicon solar cells
The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.
1980-01-01
Combining laser chemical processing and aerosol jet printing: a laboratory scale feasibility study
British Library Electronic Table of Contents (United Kingdom)
Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...
1983-12-15
Molecular dynamics studies of silicon ion implantation
Energy Technology Data Exchange (ETDEWEB)
Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary ...
1994-12-31
Light-weight free-standing carbon nanotube-silicon films for anodes of lithium ion batteries.
Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...
2010-07-27
Tribological and corrosion testing of surface engineered surgical grade CoCrMo alloy
British Library Electronic Table of Contents (United Kingdom)
One of the main causes of hip prostheses failure is the premature wear of its components. Wear of metal-on-metal joints is a concern due to the toxicity and biological reaction of wear debris and metallic corrosion. The main aim of the present study was to investigate the tribological and corrosion behavior of surface engineering CoCrMo alloy. Different surface conditions were obtained on surgical grade wrought CoCrMo alloy: plasma nitrided (520^oC by 7h at gas mixture of 10% N2+90% H2), PVD coated (monolayer CrN and multilayer (TiN/CrN)x3) and modified using duplex surface engineering technology (a combination of the two previous approaches: plasma nitriding followed by plasma assisted PVD). Surfaces were characterized using scanning electron microscopy, nanoindentation, AFM and scratch t...
2011-01-01
Synthesis of nano-size Ca-#alpha# SiAlON Powders by carbothermal reduction-nitridation
International Nuclear Information System (INIS)
Carbothermal reduction-nitridation (CRN) of SiO_2 is an attractive method for manufacturing Si_3N_4 powders with controlled grain morphology. Moreover, #beta#-sialon powders could also be synthesized from either pure powder mixtures or some inexpensive raw minerals by CRN. The resultant powders have shown some advantages, especially in manufacturing sialon products at low cost. However, there have been only a few works on preparing #alpha#-sialon powders. In this work, Ca-#alpha# sialon powder was synthesized by CRN of a SiO_2-Al_2O_3 and CaCO_3 powder mixture An unusual morphology of hollow balls of 200 to 500nm with many nano size #alpha#-sialon particles of 10 to 30nm was identified from the resultant Ca-#alpha# sialon powders. This has never been previously reported for sialon ceramics. It was consequently confirmed that the morphologies of the products were clearly related to the intermediate products appearing during CRN reaction. Copyright (2000) The ...
Surface hardening utilizing high-density plasma nitriding on stainless steel alloys
Energy Technology Data Exchange (ETDEWEB)
By using a plasma nitriding procedure at the PUPR Mirror Cusp Plasma machine, surface hardness is increased in 302/304-type stainless steel samples by exposing them to high-ion-density plasma at high vacuum. This method successfully dopes the surface of the material with strengthening nitrogen ions, without the use of chemical procedures that sacrifice the resistance to corrosion of the given material. A 500 V negative bias is placed on the sample exposed to the nitrogen plasma, where high-energy ions are therefore attracted and immersed into the metallic matrix microns into the surface of the stainless steel. This potential maintains a constant surface temperature at approximately 800 deg. C. The plasma parameters including ion density and plasma temperature were diagnosed using single Langmuir probes. The stainless steel samples were then tested using scanning electron microscopy (SEM), and Vickers micro-hardness testing to determine the increment in the surface ...
2008-10-15
Surface hardening utilizing high-density plasma nitriding on stainless steel alloys
International Nuclear Information System (INIS)
By using a plasma nitriding procedure at the PUPR Mirror Cusp Plasma machine, surface hardness is increased in 302/304-type stainless steel samples by exposing them to high-ion-density plasma at high vacuum. This method successfully dopes the surface of the material with strengthening nitrogen ions, without the use of chemical procedures that sacrifice the resistance to corrosion of the given material. A 500 V negative bias is placed on the sample exposed to the nitrogen plasma, where high-energy ions are therefore attracted and immersed into the metallic matrix microns into the surface of the stainless steel. This potential maintains a constant surface temperature at approximately 800 deg. C. The plasma parameters including ion density and plasma temperature were diagnosed using single Langmuir probes. The stainless steel samples were then tested using scanning electron microscopy (SEM), and Vickers micro-hardness testing to determine the increment in the surface ...
2008-10-01
International Nuclear Information System (INIS)
Synthesis of Eu-doped #beta#- and 15R-SiAlONs was studied by the ammonia nitridation of precursors derived from an #alpha#-Si_3N_4 fine powder dispersed in aluminum glycine gel with various Si/Al ratio and post-annealing in a nitrogen pressure furnace. The largest amount of #beta#-SiAlON was observed in the product at 1750 deg. C for Si/Al = 1/1 with small amounts of both #alpha#- and 15R-SiAlON impurities. The product showed two emissions at around 420 nm and 560 nm. The emission intensities decreased with increasing amount of #beta#-SiAlON. The former and latter emissions were assigned to Eu"2"+ in the 15R- and #alpha#-SiAlONs impurities. A mixture of Eu-doped 15R-SiAlON with #alpha#-Al_2O_3 impurity was obtained for Si/Al = 1/6, using AlN together with Al(NO_3)_3.9H_2O in a 2/1 atomic ratio as the aluminum source. It showed a bluish-white emission at 450 nm under 254 nm radiation.
2009-11-13
Energy Technology Data Exchange (ETDEWEB)
Plasma Immersion Ion Implantation (PIII) is a new hybrid technology for surface treatment of materials based on the principles of plasma nitriding and ion implantation. The equipment and the operation of the system are introduced. As well as providing an alternate method of ion implantation, it is possible to combine energetic ion bombardment with plasma nitriding. Different metal materials and treatment conditions have been studied. The capability of PIII-treatment to improve the properties of a wide range of metals has been proven. Application for forming tools and their industrial test has been successful. (orig.) [Deutsch] Die Plasmaimmersionsimplantation (PIII) ist eine neue Hybridtechnologie zur Behandlung von Werkstoffoberflaechen und basiert auf den Prinzipien des Plasmanitrierens und der Ionenimplantation. Die Anlagentechnik und die Arbeitsweise werden vorgestellt. Verfahrensspezifische Vorteile entstehen durch die Moeglichkeit, sowohl ...
1995-01-01
International Nuclear Information System (INIS)
The concept of nanocrystal conversion chemistry, which involves the use of pre-formed nanoparticles as templates for chemical transformation into derivative solids, has emerged as a powerful approach for designing the synthesis of complex nanocrystalline solids. The general strategy exploits established synthetic capabilities in simple nanocrystal systems and uses these nanocrystals as templates that help to define the composition, crystal structure, and morphology of product nanocrystals. This article highlights key examples of 'conversion chemistry' approaches to the synthesis of nanocrystalline solids using a variety of techniques, including galvanic replacement, diffusion, oxidation, and ion exchange. The discussion is organized according to classes of solids, highlighting the diverse target systems that are accessible using similar chemical concepts: metals, oxides, chalcogenides, phosphides, alloys, intermetallic compounds, sulfides, and nitrides. - Graphical ...
2008-07-01
Kneading of stearic acid into an extruder
Energy Technology Data Exchange (ETDEWEB)
An extruder used by kneading stearic acid (St acid) into it for the production of polystyrene for injection molding was studied. Most disadvantageous of kneading methods, melt-feed method, was applied because this method enables the utilization of existing facilities. St acid is discolored when the temperature surpasses 270{sup 0}C in nitrogen atmosphere, and the contact with metals intensifies the discoloring. The discoloring is more intensified by the contact with nitriding steel than with stainless steel. Residence time is 85 seconds, and even the contact with nitriding steel does not discolor ST acid when the temperature is lower than 270{sup 0}C. In the melt-feed method, when the die is in a bad shape, it brings about dead space at the tip of the die and St acid holds up there. When the kneading is in bad condition (St acid and polymer are hard to mix because their viscosities are quite different), St acid gathers between the barrel wall ...
1989-09-01
Energy Technology Data Exchange (ETDEWEB)
The austenitic nitrided Cr-Mn steels CrMnN 1812, CrMnNMo 1714 and CrNiTi 1810 has been investigated in chloride nitric acid at temperature 20-60 C. The Potentials of pitting nucleation and the time for pitting initiation has been determinate by the hronoamperometric method. It was established that alloying only with nitrogen is not sufficient procedure for obtaining of resistive to localised corrosion steel structure. Of importance for the resistance to localised corrosion of Cr-Mn steels is alloying with molybdenum. (orig.) [Deutsch] Die austenitischen stickstoffhaltigen Cr-Mn Staehle CrMnN 1812, CrMnNMo 1714 und der klassische CrNiTi 1810 wurden in chloridhaltigen Salpetersaeureloesungen im Temperaturbereich 20-60 C untersucht. Durch die hronoamperometrische Methode wurden die Potentiale der Lochfrassbildung und die Zeit zur Initiierung der Lochfrasskorrosion bestimmt. Man stellte fest, dass das Legieren der Staehle nur mit Stickstoff eine nicht genuegende ...
1997-12-01
Energy Technology Data Exchange (ETDEWEB)
In order to establish coal NOx preventive measures, discussions were given on formation of N2 in the fixed-bed pyrolysis of low rank coals and the mechanisms thereof. Chinese ZN coal and German RB coal were used for the discussions. Both coals do not produce N2 at 600{degree}C, and the main product is volatile nitrogen. Conversion into N2 does not depend on heating rates, but increases linearly with increasing temperature, and reaches 65% to 70% at 1200{degree}C. In contrast, char nitrogen decreases linearly with the temperature. More specifically, these phenomena suggest that the char nitrogen or its precursor is the major supply source of N2. When mineral substances are removed by using hydrochloric acid, their catalytic action is lost, and conversion into N2 decreases remarkably. Iron existing in ion-exchanged condition in low-rank coal is reduced and finely diffused into metallic iron particles. The particles react with heterocyclic nitrogen compounds and turn into iron ...
1996-10-28
Enhancement of surface properties of 45{number_sign} steel using plasma immersion ion implantation
Energy Technology Data Exchange (ETDEWEB)
45{number_sign} steel, which has good mechanical strength and is relatively cheap, is a common constituent in industrial components, such as precision gears, piston columns of oil pumps, and so on. However, since the working environment of these industrial parts is sometimes quite harsh and unforgiving, they are vulnerable to wear and corrosion. Replacing 45{number_sign} steel with stainless or alloy steel increases the cost significant, and a better alternative is to improve its surface properties and lifetime using plasma immersion ion implantation (PIII). The authors have devised a variety of treatment processes using PIII, including radio-frequency (RF) plasma nitriding, RF plasma nitriding and nitrogen PIII, Ti deposition in conjunction with nitrogen PIII (IBED), as well as Cr deposition followed by nitrogen PIII (IBED). To assess the efficacy of the processes, the microhardness and mass loss due to wear were measured for both the ...
1997-12-31
Energy Technology Data Exchange (ETDEWEB)
The control of gas activity and process technology has developed tremendously over the past two decades. While once considered to be primitive control systems using simple PID loops with thermocouples that were suspect and unable to perform repeatedly and consistently during the arduous process of plasma nitriding and processing, developments in recent years have elevated the control of the process into what might be considered one of the most controllable processes of the latter part of this century. The advent of plasma processing technology has improved control methods by observing and harnessing each of the various process parameters into many different combinations of control systems. Some of these control systems can control the complete function of the process, thus freeing the operator entirely for other duties, except that of load and unload, to the point where the operator is intimately involved with the process. Some of the control methods report from ...
1995-12-31
Adsorption properties of. cap alpha. -modification of boron nitride
The adsorption properties of four samples of ..cap alpha..-BN were studied by means of gas chromatography. The particles of ..cap alpha..-BN particles, according to data obtained by electron microscopy, have the shape of thin platelets. A sample of ..cap alpha..-BN prepared from magnesium polyboride was found to be the most nearly homogeneous adsorbent. For a number of n-alkanes, benzene, and alkylbenzenes, data have been obtained on the retention volumes (Henry constants) and the differential heats of adsorption for surface coverages approaching zero. These thermodynamic data on the adsorption showed that ..cap alpha..-BN, like graphitized thermal carbon black, is a nonspecific adsorbent.
1986-11-01
THE EFFECT OF INTERSTITIAL N ON GRAIN BOUNDARY COHESIVE STRENGTH IN Fe
Energy Technology Data Exchange (ETDEWEB)
Increased nitrogen levels have been correlated with decreased ductility and elevated ductile-to-brittle transition temperature in pressure vessel steels [1]. However, the exact role played by nitrogen in the embrittlement of steels remains unclear. Miller and Burke have reported atom probe ion microscopy findings from neutron-irradiated low-alloy pressure vessel steel showing the presence of a 1 to 2 ruonolayer thick film of Mo, N, and C at prior austenitic grain boundaries (GB's) [2], suggesting a role for nitrogen as an intergranular embrittler. It is of interest for the development of mitigation strategies whether nitrogen must combine with other impurities to form nitride precipitates in order to exert an embrittling effect. Briant et al [1] have associated the embrittling effect of N in steels exclusively with intergranular nitride formation. This association suggests that high nitrogen levels may be acceptable if ...
2003-09-22
Energy Technology Data Exchange (ETDEWEB)
The recent rapid progress in surface treatment techniques dictates that the titanium alloys should have an improved resistance to frictional wear without any loss of their high corrosion resistance. These requirements can be satisfied by producing surface layers of specified microstructure and phase composition. The present paper describes a modification of the plasma discharge nitriding treatment of titanium alloys, i.e. the glow discharge-assisted oxycarbonitriding, which by introducing oxygen, nitrogen and carbon into the surface zone of the layer [a Ti(NCO) type layer] improves its useful properties, primarily the resistance to frictional wear and the resistance to corrosion [T. Wierzchon, J. Sobiecki, Vacuum, 44 (1993) 975; T. Wierzchon et al., in: G. Hecht, F. Richter, J. Hahn (Eds.), Thin Films, DGM Informationgesellschaft, Germany, 1994, p. 195] [1:2]. This is because titanium shows a good affinity to oxygen, carbon and nitrogen, whereas the chemical ...
1997-11-25
Energy Technology Data Exchange (ETDEWEB)
Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N compositions as a controlled buffer at the interface. Significant relaxation of the film stress ...
1999-09-01
Plasma nitriding of pure iron at several temperatures
Energy Technology Data Exchange (ETDEWEB)
The present work discusses the effect of the plasma nitriding temperature on the physical and chemical properties of the compound layer formed on pure iron samples. The samples were plasma nitrided in a mixture of H{sub 2}-20% N{sub 2} under a pressure of 6 mbar by using dc glow discharges. The treatment temperature T{sub N} was selected in the interval 400-600 C in steps of 50 C. X-ray diffraction and Moessbauer spectroscopy techniques were used as analytical tools to study the composition of the near-surface compound layer. Our results indicate that the effective thickness of the compound layer is smaller than 0.2 {mu}m for T{sub N} {<=}450 C and greater than this value for T{sub N} {>=}500 C. Also, we found that the compound layer is formed by a mixture of the phases {epsilon}-Fe{sub x}N(3.2{>=} x {>=}2) and {gamma}'-Fe{sub 4}N. In this case, the relative fractions of each phase depend on T{sub N}. As ...
2002-06-01
Energy Technology Data Exchange (ETDEWEB)
Surface analytical studies of high nitrogen austenitic stainless steels exposed to deaerated 0.1M HCl have revealed that nitrogen alloying additions influence the composition of salt layers and the passive film/alloy interface. In this study the authors employ electrochemical techniques and variable angle X-ray Photoelectron Spectroscopy (XPS) to examine the passive films formed on a series of austenitic stainless steels, Fe18Cr8Ni, Fe18Cr8Ni0.2N, Fe20Cr20Ni, Fe20Cr20Ni6Mo and Fe20Cr20Ni6Mo0.2N, in acidic chloride aqueous solution. In addition, several other model alloys, Fe19Cr, Fe19Cr9Ni, Fe19Cr2.5Mo, and Fe19Cr9Ni2.5Mo, were examined before and after electrochemical surface nitriding, a technique proven to have an effect analogous to N alloying. It was shown that nitrogen, nickel and molybdenum additions independently and in certain combinations stimulate selective dissolution of iron, resulting in a significant enrichment of chromium beneath the passive film. ...
1995-12-01
International Nuclear Information System (INIS)
Surface analytical studies of high nitrogen austenitic stainless steels exposed to deaerated 0.1M HCl have revealed that nitrogen alloying additions influence the composition of salt layers and the passive film/alloy interface. In this study the authors employ electrochemical techniques and variable angle X-ray Photoelectron Spectroscopy (XPS) to examine the passive films formed on a series of austenitic stainless steels, Fe18Cr8Ni, Fe18Cr8Ni0.2N, Fe20Cr20Ni, Fe20Cr20Ni6Mo and Fe20Cr20Ni6Mo0.2N, in acidic chloride aqueous solution. In addition, several other model alloys, Fe19Cr, Fe19Cr9Ni, Fe19Cr2.5Mo, and Fe19Cr9Ni2.5Mo, were examined before and after electrochemical surface nitriding, a technique proven to have an effect analogous to N alloying. It was shown that nitrogen, nickel and molybdenum additions independently and in certain combinations stimulate selective dissolution of iron, resulting in a significant enrichment of chromium beneath the passive film. ...
1995-03-26
The Effects of Surface Chemistry on the Properties of Proteins Confined in Nano-porous Materials
Energy Technology Data Exchange (ETDEWEB)
The entrapment of proteins using the sol-gel route provides a means to retain its native properties and artificially reproduce the molecular crowding and confinement experienced by proteins in the cell allowing investigation of the physico-chemical and structural properties of biomolecules at the biotic/abiotic interface. The biomolecules are spatially separated and 'caged' in the gel structure but solutes can freely permeate the matrix. Thus, properties such as the folding of ensembles of individual molecules can be examined in the absence of aggregation effects that can occur in solution studies. Green fluorescent protein from Aequorea coerulescens was used as a model protein to examine the unfolding/re-folding properties of protein in silica gels. The recombinant protein was isolated and purified from Escherichia coli extracts by cell lysis, three-phase partitioning, dialysis, and anion exchange chromatography. The purity of the protein was greater than 90% as ...
2007-09-01
Synthesis of Si nanowires for MEMS cantilever sensor applications
We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the ...
2004-12-01
Novel silicon fabrication process for high-aspect-ratio micromachined parts
Energy Technology Data Exchange (ETDEWEB)
Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...
1995-08-01
Turning the Moon into a Solar Photovoltaic Paradise
Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and ...
2006-01-01
Mechanism for transient-enhanced diffusion in ion-implanted silicon
International Nuclear Information System (INIS)
High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients as a function of concentration. Diffusion ...
1985-03-01
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}
1999-03-01
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
International Nuclear Information System (INIS)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.
1999-03-01
International Nuclear Information System (INIS)
In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si films are the main factors that ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...
2007-06-04
International Nuclear Information System (INIS)
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...
2007-06-04
Annealing and diffusion characteristics of boron-through-oxide implanted silicon
International Nuclear Information System (INIS)
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced ...
A detailed physical model for ion implant induced damage in silicon
Energy Technology Data Exchange (ETDEWEB)
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated ...
1998-06-01
A detailed physical model for ion implant induced damage in silicon
International Nuclear Information System (INIS)
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the ...
1998-06-01
Energy Technology Data Exchange (ETDEWEB)
The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop ...
2005-11-01
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