International Nuclear Information System (INIS)

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

Energy Technology Data Exchange (ETDEWEB)

We investigate the formation of nanostructures in 2D strained alloys on face centered cubic (111) surfaces by means of equilibrium Monte Carlo simulations. In the framework of an off-lattice model, we consider one monolayer of two bulk-immiscible adsorbates A and B with negative and positive misfit relative to the substrate, respectively. Simulations show that the adsorbates partly self-organize into island or stripe-like patterns. We show how these structures depend on the relative misfits, interaction, and concentration of components. The morphology is quite different for phase separation and intermixing regimes.

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and ...

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of ...

International Nuclear Information System (INIS)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

Energy Technology Data Exchange (ETDEWEB)

The Heusler alloy Ni{sub 2}MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si{sub 3}N{sub 4} membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the films grown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR). The almost perfect lattice match between InAs and Ni{sub 2}MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam resists, the samples are grown at substrate temperatures of 50 C and annealed up to ...

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ...

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the films on tungsten. Recent results on Fe films which are grown directly on ...

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

Energy Technology Data Exchange (ETDEWEB)

The B-Factory which is constructed by National Laboratory for High Energy Physics is the device for elucidating the breakdown of symmetry of matter and antimatter by studying the behavior of B mesons which are generated in large quantity when the electrons and the positrons which are accelerated to light velocity level are collided. In order to maintain electron beam-positron beam bunch circling the ring at light velocity stably, the instability of the coupled bunch must be overcome. For this purpose, the ultrahigh speed beam position digital feedback control system was developed. This system is composed of the high speed input-output substrate using GaAs LSI, the feedback computation substrate using complementary metal oxide semiconductor and the memory mounted on it, and the real time operation device. The development of both substrates and their functions are explained. The real time data collection ...

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of ...

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical ...

Energy Technology Data Exchange (ETDEWEB)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

International Nuclear Information System (INIS)

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin ...

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

Energy Technology Data Exchange (ETDEWEB)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

J-STORE (Japan)

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Science.gov (United States)

Data are presented demonstrating short-wavelength (approx. <6400 A) continuous (cw) laser operation of p-n diode In/sub 0.5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0.5/P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30 /sup 0/C to room temperature (RTapprox. =300 K, lambdaapprox. =6395 A) the threshold current density changes from 2.3 x 10/sup 3/ A/cm/sup 2/ (-30 /sup 0/C) to 3.7 x 10/sup 3/ A/cm/sup 2/ (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7 x 10/sup 3/ W/cm/sup 2/, J/sub eq/approx.2.9 x 10/sup 3/ A/cm/sup 2/) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub ...

Science.gov (United States)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are ...

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for ...

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs surface oxides formed on the GaAs surface during and after ...

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

KoreaScience (Korea)

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International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been observed. At last has ...

Science.gov (United States)

A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize ...

Energy Technology Data Exchange (ETDEWEB)

The strongly localized one-electron (D{sup 0}) and two-electron (D{sup -}) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D{sup -} state in GaAs and both the states (D{sup 0} and D{sup -}) in CdF{sub 2}. (author) 7 refs, 1 fig

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

Science.gov (United States)

CuPt-type ordering in In{sub 0.49}Al{sub 0.51}P is studied by TEM. The lattice-matched film was grown by MOCVD on a GaAs substrate oriented 10{sup o} off (001) towards [110], at 650 C and 25 nm/min. TEM [110] and [1{bar 1}0] cross-sections (XS) were made by wedge polishing and 2 kV Ar ion milling. In CuPt-type ordering of In{sub 0.52}Ga{sub 0.48}P, alternating In-Ga-In-Ga {l_brace}111{r_brace} planes of group III atoms produce 1/2 {bar 1}11 and 1/2 1{bar 1}1 order spots in the 110 SADP, while the [1{bar 1}0] SADP shows no order spots [1-3]. A few studies have reported this type of order in In{sub 0.49}Al{sub 0.51}P [4]. The 004 BF image of the [1{bar 1}0] XS in Fig. 1 shows uneven light/dark contrast modulation due to phase separation often observed in In{sub 0.52}Ga{sub 0.48}P. There are also light/dark layers marked ML parallel to the film growth plane; such unintentional multilayers have also been observed [5] but their origin is not ...

KoreaScience (Korea)

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Science.gov (United States)

The authors described a method for determination of tissue renin activity with heterologous substrate. The preparation of the substrate was performed at several stages: salting with amonium sulfate; dialisis of the precipitate till complete separation of amonium sulfate molecules; distruction of angiotensinases by interchangeble souring and alcalization of the medium; lyophylization of the pure substrate. The obtained renin-substrate was preserved in ampules and its usage had a series of advantages--duration, economic, a possibility for standartization of the determination, etc., which were described in details in the article. The described in details also the quantitative determination of the renin activity in the tissues (renal and cerebral) with the help of the obtained substrate as the moments, modiied by the authors, were indicated. PMID:436712

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a ...

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as for space ...

Science.gov (United States)

Both ammonium and nitrite act as substrates as well as potential inhibitors of anoxic ammonium-oxidizing (Anammox) bacteria. To satisfy demand of substrates for Anammox bacteria and to prevent substrate inhibition simultaneously; two strategies, namely high or low substrate concentration, were carefully compared in the operation of two Anammox upflow anaerobic sludge blanket (UASB) reactors fed with different substrate concentrations. The reactor working at relatively low influent substrate concentration (NO(2)(-)-N, 240 mg-NL(-1)) was shown to avoid the inhibition caused by nitrite and free ammonia. Using the strategy of low substrate concentration, a record super high volumetric nitrogen removal rate of 45.24 kg-Nm(-3) day(-1) was noted after the operation of 230 days. To our knowledge, such a high value has not been reported previously. ...

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

International Nuclear Information System (INIS)

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

CERN Document Server

Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO 2 Substrates

UK PubMed Central (United Kingdom)

The acetogenic bacterium Clostridium thermoaceticum ATCC 39073 grew at the expense of the two-carbon substrates oxalate and glyoxylate. Other two-carbon substrates (acetaldehyde, acetate,...Full Text Available

Science.gov (United States)

During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...

UK PubMed Central (United Kingdom)

BackgroundIn vitro data suggest that changes in myocardial substrate metabolism may contribute to impaired myocardial function in diabetic cardiomyopathy (DCM)....Full Text Available

International Nuclear Information System (INIS)

A new polarized electron gun for use on the SLC at SLAC has been built and tested. It is a diode gun with a laser driven GaAs photocathode. It is designed to provide short (2ns) pulses of 10 A at 160 kV at 120 Hz. The design features of the gun and results from a testing program on a new and dedicated beam line are presented. Early results from operation on the SLC will also be shown.

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination ...

Energy Technology Data Exchange (ETDEWEB)

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

Energy Technology Data Exchange (ETDEWEB)

A piezoelectric biosensor substrate useful for immobilizing biomolecules in an oriented manner on the surface of a piezoelectric sensor has a ladder polymer of polyacrylonitrile. To make the substrate, a solution of an organic polymer, preferably polyacrylonitrile, is applied to the surface of a piezoelectric sensor. The organic polymer is modifying by heating the polymer in a controlled fashion in air such that a ladder polymer is produced which, in turn, forms the attachment point for the biomolecules comprising the piezoelectric biosensor. 3 figs.

Energy Technology Data Exchange (ETDEWEB)

In this paper, the influence of plasma nitriding at temperature 720 deg. C for 20 h on the surface microstructure and interface microstructure of electroplated chromium coating was investigated. In these conditions, interdiffusion, mixing and reaction phenomena of elements originating from the substrate and coating material are more likely to occur, thus increasing the bonding strength between the coating and carbon steel substrate. The change of the structures from the substrate side to the coating surface, and the effect of the substrate steel on the interface structure were studied by cross-sectional transmission electron microscope observation (XTEM). The nitride layer formed on the surface was analyzed by X-ray diffraction method (XRD). After treatment at above conditions a 6-7 {mu}m thick nitride compound layer was formed in surface region and the same thick carbide compound layer was also formed ...

International Nuclear Information System (INIS)

The combined process of low temperature plasma nitriding and TiN film deposition was realized on the plasma-assisted vacuum arc plating set. The process of plasma nitriding can be done below 200 degree C. The low temperature plasma nitriding and TiN film deposition was realized on the same device. By the SEM analysis of the plating structure, low hardness grads from the substrate to the film was obtained, and it was found that the mixed nitride plating formed at the interface between the substrate and the film. The quantitative measurement of substrate-film adherence showed that the adherence was improved notably by using the process. The adherence between film and substrate can reach to 59.6 MPa without the bias voltage supplying

Energy Technology Data Exchange (ETDEWEB)

Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi/sub 2/ was formed on amorphous Si substrates at 350 /sup 0/C, while NiSi remained stable on crystalline Si substrates even at 400 /sup 0/C. PtSi reacted with Si to form a metastable Pt/sub 4/Si/sub 9/ phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt/sub 4/Si/sub 9/ was easier on crystalline Si substrates than on amorphous substrates. No mixing was observed for PdSi on Si in the temperature range of 35--400 /sup 0/C. The ion mixing results were compared with those from thermal annealing. The importance of demixing of a thermally stable system was explored.

Energy Technology Data Exchange (ETDEWEB)

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal ...

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe how this concept ...

Energy Technology Data Exchange (ETDEWEB)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary ...

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

International Nuclear Information System (INIS)

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

Energy Technology Data Exchange (ETDEWEB)

The ink jet printing technology is a relatively novel technique in development of organic electronic devices. The technique consists of working out depositions of organic layers by a piezo-based ink jet printer. In this work polymer conducting films deposited by ink jet printing technique on different plastic substrates has been demonstrated. The poly(3,4-ethylenedioxythiofene)/poly(4-styrenesulfonate) [PEDOT/PSS] and glycerol-modified PEDOT/PSS [G-PEDOT/PSS] were used like conducting inks to be applied on polyester and polyethylene terephthalate (PET) substrates. By means of the change of substrate associated to the deposition number or type of polymer ink used for printing of the conducting films, the sheet resistance can be modified. Such a behavior suggests that plastic substrate fulfills an important role for the changing of sheet resistance of the PEDOT/PSS and G-PEDOT/PSS films made by ink jet ...

Energy Technology Data Exchange (ETDEWEB)

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

International Nuclear Information System (INIS)

The use of workstations, controllers or embedded systems and their applications have become much more relevant than previously. PC-based systems, a cooker programmer, applications of, for example, Prolog machines, Unix and Ada papers, Robotics and Automation are typical examples of this. The three keynote addresses of this symposium have as their subjects the most spectacular microcomputer fields and are presented by leading experts. The papers presented cover most of the traditional interests of Euromicro. Special emphasis is given to contributions on the use of workstations and personal computers, on RISC and GaAs and on transputers.

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

Energy Technology Data Exchange (ETDEWEB)

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post-growth thermal annealing. In ...

International Nuclear Information System (INIS)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have demonstrated a ...

International Nuclear Information System (INIS)

Tungsten (W) coating on fusion candidate V-4Cr-4Ti (NIFS-HEAT-2) substrate was demonstrated with plasma spray process for the purpose of applying to protection of the plasma facing surface of a fusion blanket. Increase in plasma input power and temperature of the substrate was effective to reduce porosity of the coating, but resulted in hardening of the substrate and degradation of impact property at 77 K. The hardening seemed to be due to contamination with gaseous impurities and deformation by thermal stress during the coating process. Since all the samples showed good ductility at room temperature, further heating seems to be acceptable for the vanadium substrate. The fracture stress of the W coating was estimated from bending tests as at least 313 MPa, which well exceeds the design stress for the vanadium structure in fusion blanket. (author)

UK PubMed Central (United Kingdom)

Phospholemman (PLM), a member of the FXYD family of regulators of ion transport, is a major sarcolemmal substrate for protein kinases A and C in cardiac and skeletal muscle. In the heart, PLM...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The preparation and luminescence properties of crystal phosphors based on alkali metal iodide and calcium oxide substrates were studied. The highest luminescence intensities were achieved with iodide substrates at 200/sup 0/ and with the calcium oxide substrate at 800/sup 0/. The calibration graphs were linear in the thallium concentration ranges 0.03-5.0 and 0.1-2.0 mu g using sodium and potassium oxides, respectively, and in the range 0.05-5 mu g using cesium iodide and calcium oxide. A method is proposed for the determination of down to 3 x 10/sup -4/% thallium in rocks, using a crystal phosphor with sodium iodide substrate.

Science.gov (United States)

A multivariate bioprocess control approach, capable of tracking a pre-set process trajectory correlated to the biomass or product concentration in the bioprocess is described. The trajectory was either a latent variable derived from multivariate statistical process monitoring (MSPC) based on partial least squares (PLS) modeling, or the absolute value of the process variable. In the control algorithm the substrate feed pump rate was calculated from on-line analyzer data. The only parameters needed were the substrate feed concentration and the substrate yield of the growth-limiting substrate. On-line near-infrared spectroscopy data were used to demonstrate the performance of the control algorithm on an Escherichia coli fed-batch cultivation for tryptophan production. The controller showed good ability to track a defined biomass trajectory during varying process dynamics. The robustness of the control was ...

Energy Technology Data Exchange (ETDEWEB)

The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.

UK PubMed Central (United Kingdom)

The application of kinetic probes that allow one to determine relative reactivities of biologically relevant substrates with oxidizing intermediates in the Fenton reagent (H2O2 plus Fe2+ in acidic aqueous...Full Text Available

UK PubMed Central (United Kingdom)

The docking protein p130Cas is a prominent Src substrate found in focal adhesions (FAs) and is implicated in regulating critical aspects of cell motility including FA disassembly and protrusion of the...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

This work provides an overview of existing plants in Europe and describes the substrates being used. It focuses on the individual farm-scale and community plants, as these are the two main types now being built. It also describes plants currently under construction, especially in Germany and Denmark, where the major efforts are focused. A description of how the technique has developed over the past few years, its current state of development, the motivation and economic balance, and the substrate characteristics, is presented.

Energy Technology Data Exchange (ETDEWEB)

The plastic displacements around Knoop indentations made in hard titanium/aluminum multilayered films on soft aluminum alloy substrates have been studied. Indentations were cross-sectioned and imaged using the focused-ion-beam (FIB) milling and high-resolution scanning electron microscopy (SEM), respectively. The FIB milling method has the advantage of removing material in a localized region without producing mechanical damage to the specimen. The micrographs of the cross-sectioned indentations indicate that most of the plastic deformation around the indentation is dominated by the soft aluminum substrate. There is a very small change in the multilayered film thickness around the indentation{emdash}less than 10{percent}. The plastic deformation of the thin film resembles a membrane being deflected by a localized pressure gradient across the membrane. Stress-induced voids are also observed in the multilayered film, especially in the area around ...

Science.gov (United States)

High quality La/sub 1.8/Sr/sub 0.2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 ..mu..m thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF/sub 2/, Si, CaF/sub 2/, ZrO/sub 2/-9% Y/sub 2/O/sub 3/, BaF/sub 2/, Al/sub 2/O/sub 3/, and SrTiO/sub 3/. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa/sub 2/Cu/sub 2/O/sub 7/ structure, in the case of SrTiO/sub 3/ ...

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The current status of non-silicon photovoltaic solar cells is discussed including the identification of current technical and economic issues and future research directions for potential high efficiency low cost technologies. This review covers such advanced materials as CdS/Cu/sub 2/S, CdS/CuInSe/sub 2/, and GaAs homojunction and heterojunction devices; such emerging materials as InP, Zn/sub 3/P/sub 2/ and CdTe; and liquid junction electrochemical photovoltaic cells. An attempt is made to compare the current relative status of these various technologies and to indicate their near term potential where possible. 105 refs.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

International Nuclear Information System (INIS)

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

Science.gov (United States)

A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)

British Library Electronic Table of Contents (United Kingdom)

Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...

International Nuclear Information System (INIS)

Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO_2 buffered layer is investigated. The Ni nanodots can hardly self-aggregate on highly heat-dissipated Si substrate with a thermal conductivity of 148 W/m K. Adding a 200-A-thick SiO_2 buffer with an ultralow thermal conductivity of 1.35 W/m K prevents the formation of NiSi_2 compounds, enhances the heat accumulation, and releases the adhesion at Ni/Si interface, which greatly accelerates the self-assembly of Ni nanodots. Dense Ni nanodots with size and density of 30 nm and 7x10"1"0 cm"-"2, respectively, can be formatted after rapid thermal annealing at 850 deg. C for 22 s.

International Nuclear Information System (INIS)

Chromium nitride thin films were deposited on SA-304 stainless steel substrates by using direct-current reactive magnetron sputtering. The influence of process conditions such as nitrogen content in the fed gas, substrate temperature, and different sputtering gases on microstructural characteristics of the films was investigated. The films showed (200) preferred orientation at low nitrogen content (< 30%) in the fed gas. The formation of Cr_2N and CrN phases was observed when 30% and 40% N_2 were used, with a balance of Ar, respectively. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the morphology and surface topography of the thin films, respectively. Microhardness tests showed a maximum hardness of 16.95 GPa for the 30% nitrogen content.

Energy Technology Data Exchange (ETDEWEB)

Epitaxial films grown pseudomorphically on substrates provide a way to stabilise non-equilibrium structures of materials. Obviously, there always is a certain lattice misfit between substrate and film material in its bulk equilibrium structure. In the pseudomorphic regime, this misfit can either lead to the growth of films in a strained bulk structure or even yield structures that are not stable in the bulk. Large misfits do not necessarily imply large lateral stress. Theory can help to predict e.g. geometry, stress and magnetic properties of pseusomorphically grown metal films. In this work, we considered the fcc-bcc epitaxial Bain path of 3d, 4d, and 5d transition metals, which provides a reasonable description of tetragonally distorted films on substrates. We carried out density functional calculations in the implementation of the full potential local orbital program package FPLO. Emphasis is put on similarities among ...

British Library Electronic Table of Contents (United Kingdom)

Thioredoxin reductase (TrxR) isoforms play important roles in cell physiology, protecting cells against oxidative processes. In addition to its endogenous substrates (Trx isoforms), hepatic TrxR can reduce organic selenium compounds such as ebselen and diphenyl diselenide to their selenol intermediates, which can be involved in their hepatoprotective properties. Taking this into account, the aim of the present study was to evaluate the hypothesis that ebselen, diphenyl diselenide and its analogs (4,4'-bistrifluoromethyldiphenyl diselenide, 4,4'-bismethoxydiphenyl diselenide, 4.4'-biscarboxy-diphenyl diselenide, 4,4'-bischlorodiphenyl diselenide, 2,4,6,2',4',6'-hexamethyldiphenyl diselenide) could be substrates of rat brain TrxR. In the presence of partially purified rat brain TrxR, dipheny...

Energy Technology Data Exchange (ETDEWEB)

In this work, we investigated self-heating related instability in polysilicon thin film transistors (poly-Si TFTs) fabricated on polyimide (PI) substrates. Indeed, when Joule heating becomes relevant, the temperature of the active layer can substantially rise, since the devices are fabricated on thermally insulating substrates. As a result, electrical instability is triggered and attributed to the generation of interface states, due to the Si-H bond breaking, and charge trapping into the gate insulator. In addition, by using 3-dimensional numerical simulations, coupling the thermodynamic and transport models, we analyzed the temperature distribution of the device under operating conditions and found that self-heating is more severe for devices fabricated on plastic substrates.

International Nuclear Information System (INIS)

Biaxially textured tungsten nanorods (A15 crystal structure) have been grown by oblique angle DC magnetron sputtering using a novel rotation mode called 'two-step rotation'. In this mode, the substrate is given a fast rotation through 1800 at 90 rpm and this is followed by a rest period of 30 s. These nanorods are vertically aligned and have a [100] texture normal to the substrate along with preferential in-plane texture as shown by x-ray pole figure analysis. In contrast, the tungsten nanorods obtained without substrate rotation are slanted at an angle of ?450 and have a [100] texture tilted 160 with respect to the substrate normal. The flux is incident from two diametrically opposite points on the sample at an oblique angle, averaging out the growth into vertical columns that retain the in-plane texture. Scanning electron microscopy shows that the tungsten nanorods have a mixture of {211} and {421} ...

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Sucrose phosphate synthase (SPS) catalyzes the transfer of a glycosyl group from an activated donor sugar, such as uridine diphosphate glucose (UDP-Glc), to a saccharide acceptor D-fructose 6-phosphate (F6P), resulting in the formation of UDP and D-sucrose-6'-phosphate (S6P). This is a central regulatory process in the production of sucrose in plants, cyanobacteria, and proteobacteria. Here, we report the crystal structure of SPS from the nonphotosynthetic bacterium Halothermothrix orenii and its complexes with the substrate F6P and the product S6P. SPS has two distinct Rossmann-fold domains with a large substrate binding cleft at the interdomain interface. Structures of two complexes show that both the substrate F6P and the product S6P bind to the A-domain of SPS. Based on comparative analysis of the SPS structure with other related enzymes, the donor substrate, nucleotide diphosphate glucose, ...

UK PubMed Central (United Kingdom)

ATP-binding cassette transporters (ABC transporters) utilize the energy of ATP hydrolysis to translocate an unusually diverse set of substrates across cellular membranes. ABCA4, also known as...Full Text Available

UK PubMed Central (United Kingdom)

In vivo short-term effects of recombinant human TNF-alpha on lipolysis, FFA flux, fat oxidation, triglyceride-fatty acid cycling, and glucose kinetics were evaluated with stable isotopic tracers and...Full Text Available

UK PubMed Central (United Kingdom)

A structurally conserved element, the trigger loop, has been suggested to play a key role in substrate selection and catalysis of RNA polymerase II (pol II) transcription elongation. Recently resolved...Full Text Available

UK PubMed Central (United Kingdom)

Compliance mismatch is a significant challenge to long-term patency in small-diameter bypass grafts because it causes intimal hyperplasia and ultimately graft occlusion. Current engineered grafts...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

One of the most challenging topics in the area of organic electronic devices is the growth of transparent electrodes onto flexible polymeric substrates that will be characterized by enhanced conductivity in combination with high optical transparency. An essential aspect for these materials is their synthesis and/or microstructure which define the transparency, the stability and the interfacial chemistry which in turn determine the performance and stability of the organic electronic devices, such as organic light emitting diodes, organic photovoltaics, etc. In this work, we will discuss the latest advances in the growth of organic (e.g. PEDOT:PSS) and inorganic (e.g. zinc oxide-ZnO, indium tin oxide-ITO) conductive materials and their deposition onto flexible polymeric substrates. We will compare the optical, structural, nano-mechanical and nano-topographical properties of the inorganic and organic materials and we investigate the effect of ...

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high ...

UK PubMed Central (United Kingdom)

Flavone and isoflavone phytoestrogens are plant chemicals and are known to be competitive inhibitors of cytochrome P450 aromatase with respect to the androgen substrate. Aromatase is the enzyme that...Full Text Available

UK PubMed Central (United Kingdom)

Many lifespan-modulating genes are involved in either generation of oxidative substrates and end-products, or their detoxification and removal. Among such metabolites, only lipoperoxides have the ability...Full Text Available

UK PubMed Central (United Kingdom)

RNase BN, the Escherichia coli homolog of RNase Z, was previously shown to act as both a distributive exoribonuclease and an endoribonuclease on model RNA substrates and to be inhibited...Full Text Available

CERN Document Server

Non-evaporable thin film getters of various compositions have been produced by sputtering. Among about 20 materials which have been studied, the lowest activation temperature (about 180 degree C) has been displayed by a Ti-Zr-V coating obtained from a cathode made of intertwisted elemental wires. In order to optimize the vacuum properties of this film various production parameters, including the substrate temperature during coating, have been varied. The films have been characterized by pumping speed measurement, secondary electron microscopy, and X-ray diffraction. It has been found that the substrate coating temperature affects significantly the activation temperature, the pumping speed and the gas surface capacity. The highest pumping speed values, obtained for substrate coating temperatures of 250 degree C and 300 degree C, are clearly correlated with the increased surface roughness and porosity of the Ti-Zr-V film.

UK PubMed Central (United Kingdom)

During the treatment of neonatal apnea, formula-fed infants, compared to breastfed infants, show nearly three-fold increase in clearance of caffeine, a substrate...Full Text Available

UK PubMed Central (United Kingdom)

The intramembrane aspartyl protease γ-secretase plays a fundamental role in several signaling pathways involved in cellular differentiation and has been linked with a variety of human diseases,...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The formation of ZnTe films was investigated on zinc substrates at 640 K by using the following ion exchange and chemical reaction processes,2Zn{sub (substrate)}+Te{sup 4+}{sub (inmoltensalts)}->2Zn{sup 2+}+Te{sub (onsubstrate)}Zn{sub (substrate)}+Te= {sub (onsubstrate)}-> ZnTe{sub (onsubstrate)}The Te{sup 4+} species was supplied to the substrate via the gas phase, vaporized from the eutectic LiCl-KCl molten salt containing TeCl{sub 4} (0.05-0.9 mol%). The phase of the films obtained depended on the reaction time and the TeCl{sub 4} content in the molten chloride. At low TeCl{sub 4} concentrations, ZnTe alloy was not formed over the entire surface even after 3.6 ks. On the other hand, at high TeCl{sub 4} concentrations, tellurium was detected in addition to the ZnTe compound during the first 0.3 ks of the reaction. By selecting appropriate TeCl{sub 4} concentrations and reaction times, a ...

UK PubMed Central (United Kingdom)

Investigations of enzymes involved in DNA metabolism have strongly benefited from the establishment of single molecule techniques. These experiments frequently require elaborate DNA substrates, which...Full Text Available

UK PubMed Central (United Kingdom)

A rise in blood pressure associated with oral contraceptives is well established but the frequency with which it develops is not known. Early results from a controlled long-term prospective study have...Full Text Available

UK PubMed Central (United Kingdom)

Designer cellulosomes are precision-engineered multienzyme complexes in which the molecular architecture and enzyme content are exquisitely controlled. This system was used to examine enzyme cooperation...Full Text Available

UK PubMed Central (United Kingdom)

Tyrosinase or polyphenol oxidase (EC 1.14.18.1) is the key enzyme in melanin biosynthesis and in the enzymatic browning of fruits and vegetables. The role of tyrosinase in the secondary metabolism of...Full Text Available

UK PubMed Central (United Kingdom)

Numerous xenobiotics, including therapeutics agents, are substrates for bioactivation to electrophilic reactive intermediates that may covalently modify biomolecules. Selective estrogen receptor...Full Text Available

UK PubMed Central (United Kingdom)

RNA editing by adenosine deaminases acting on RNAs (ADARs) can be both specific and non-specific, depending on the substrate. Specific editing of particular adenosines may depend on the overall sequence...Full Text Available

International Nuclear Information System (INIS)

The sheath plasma characteristics changing with the negative bias applied to the substrate during electron cyclotron resonance plasma nitriding are studied. The sheath characteristics obtained by a Langmuir single probe and an ion energy analyzer show that when the negative bias applied to the substrate is increasing, the most probable energy of ions in the sheath and the full width of half maximum of ions energy distribution increase, the thickness of the sheath also increases, whereas the saturation current of ion decreases. It has been found from the optical emission spectrum that there are strong lines of N_2 and N_2"+. Based on the experiment results the mechanism of plasma nitriding is discussed

International Nuclear Information System (INIS)

Capsulation of terbium(III) chloride in porous glass in the amount of 1.5-150 #mu#mole g"-"1 was carried out by impregnation of the glass substrate with variable concentrations of the salt aqueous solutions. Maximum luminosity of terbium(III) chloride in porous glass is found at its concentration of 120 #mu#mole g"-"1, that is close to the corresponding monolayer surface filling. Concentration dependences of terbium(III) luminescence and its quenching by adsorbed water are in agreement with the ideas of molecular fragmentation and uniform distribution of capsulated salt on the substrate surface

Energy Technology Data Exchange (ETDEWEB)

There is increasing demand to functionalize meso- and nano-porous materials by coating and make the porous substrate biocompatible or environment friendly. However, coating on a meso-porous substrate poses great challenges, especially if the pore aspect ratio is high. In the current work the pulsed laser deposition (PLD) method is used for coating Ni{sub 3}Al-based meso-porous membranes with diamond-like carbon (DLC) layers of high thickness homogeneity and adhesion. (orig.)

Energy Technology Data Exchange (ETDEWEB)

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias ...

Science.gov (United States)

Adenine DNA glycosylase catalyzes the glycolytic removal of adenine from the promutagenic A {center_dot} oxoG base pair in DNA. The general features of DNA recognition by an adenine DNA glycosylase, Bacillus stearothermophilus MutY, have previously been revealed via the X-ray structure of a catalytically inactive mutant protein bound to an A:oxoG-containing DNA duplex. Although the structure revealed the substrate adenine to be, as expected, extruded from the DNA helix and inserted into an extrahelical active site pocket on the enzyme, the substrate adenine engaged in no direct contacts with active site residues. This feature was paradoxical, because other glycosylases have been observed to engage their substrates primarily through direct contacts. The lack of direct contacts in the case of MutY suggested that either MutY uses a distinctive logic for substrate recognition or that the X-ray structure had ...

Energy Technology Data Exchange (ETDEWEB)

Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...

International Nuclear Information System (INIS)

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ...

International Nuclear Information System (INIS)

Thinning specimens to electron transparency for electron microscopy analysis can be done by conventional (2-4 kV) argon ion milling or focused ion beam (FIB) lift-out techniques. Both these methods tend to leave 'mottling' visible on thin specimen areas, and this is believed to be surface damage caused by ion implantation and amorphisation. A low energy (250-500 V) Argon ion polish has been shown to greatly improve specimen quality for crystalline silicon samples. Here we investigate the preparation of technologically important materials for nanoanalysis using conventional and lift-out methods followed by a low energy polish in a GentleMill"T"M low energy ion mill. We use a low energy, low angle (6-8 deg.) ion beam to remove the surface damage from previous processing steps. We assess this method for the preparation of technologically important materials, such as steel, silicon and GaAs. For these materials the ability to create specimens from specific sites, and ...

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the ...

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

International Nuclear Information System (INIS)

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American Institute of ...

International Nuclear Information System (INIS)

We theoretically model a nuclear-state preparation scheme that increases the coherence time of a two-spin qubit in a double quantum dot. The two-electron system is tuned repeatedly across a singlet-triplet level-anticrossing with alternating slow and rapid sweeps of an external bias voltage. Using a Landau-Zener-Stueckelberg model, we find that in addition to a small nuclear polarization that weakly affects the electron spin coherence, the slow sweeps are only partially adiabatic and lead to a weak nuclear spin measurement and a nuclear-state narrowing which prolongs the electron spin coherence. This resolves some open problems brought up by a recent experiment. We also show that the electronic two-spin states singlet and triplet T_+ are promising candidates for the implementation of a qubit in GaAs double quantum dots (DQD). A coherent superposition of the two-spin states is obtained by finite time Landau-Zener-Stueckelberg interferometry and the single qubit ...

International Nuclear Information System (INIS)

In this study, WO3 thin films were grown on glass substrates using an aqueous solution containing tungstate (NH4)2WO4 as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at Ts = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T(?) and reflectance R(?) spectra in 300-1800 nm domain. The ...

Energy Technology Data Exchange (ETDEWEB)

The paper gives a general view of techniques and systems related to soil less culture developed in the last years (on substrate in beg; NFT; Ebb-Flood, aeroponic,..) taking into account their management and problems (water quality, control of plant nutrition and irrigation; substrates; pathological aspects,..). The evolution, now in progress, of soil less culture from open to closed system as a way to realized an environmental friendly growing system, is considered. When plants are grown with open cycle techniques a large amount of waste solution, with an a high content of nutrients, are discharged in soil and water. Furthermore, they need an extra-utilization of water and fertilizers. Another aspect is the utilization of low cost substrates, which can be reused for more than one cultural cycle without negative effects on yield, and also finally discharged without negative effects on the environment. The development of soil ...

Energy Technology Data Exchange (ETDEWEB)

Duplex-coating procedures consisting of plasma nitriding and Me-C:H hard coating lead to an improved performance of the devices because the Me-C:H coating is supported by the nitrided phase and, therefore, the `eggshell-effect` is avoided. Furthermore, this support leads to a higher load-bearing capacity of the thin film. Two standard procedures (classical high-pressure plasma nitriding and unbalanced magnetron sputtering of Ti-C:H) were performed subsequently to prepare the duplex coatings on X20Cr13 ferritic stainless steel. The corrosion resistance of the steel could be improved by nitriding at 450 C compared to the untreated ferritic substrate. The roughness is determined by the nitriding step. The weakest point of the coating is the transition zone between the nitrided and the untreated substrate and not the interface between the Ti-C:H coating and the nitrided substrate as shown by the Rockwell and scratch tests. The ...

Energy Technology Data Exchange (ETDEWEB)

We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}

Energy Technology Data Exchange (ETDEWEB)

The Ti and Ti-Al coatings were deposited onto hot-worked AISI H11 steel substrates and plasma nitrided at 900 C. The Ti coated samples were successfully nitrided, while cracking and delamination of the Ti-Al coating was observed during nitriding. The formation of [delta]-TiN and [epsilon]-Ti[sub 2]N phases were detected after plasma nitriding of the Ti coating. During plasma treatment of the Ti-Al coating, the initial Ti[sub 3]Al and Al phases were paartially transformed into TiAl phase. The martensite transformation of the substrate material was found. The as-deposited Ti coating has a fibrous structure, while the structure of the as-sputtered Ti-Al coating is columnar. The superficial Vickers microhardness of plasma-nitrided Ti coating was 2200 HV 0.03 and the critical load of higher than 50 N indicates very good coating-to-substrate adhesion. (orig.)

International Nuclear Information System (INIS)

Iron oxide thin films were prepared by spray pyrolysis technique onto glass substrates from iron chloride solution. They were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and (UV-vis) spectroscopy. The films deposited at T _s #<=# 450 deg. C were amorphous; while those produced at T _s_u_b = 500 deg. C were polycrystalline #alpha#-Fe_2O_3 with a preferential orientation along the (1 0 4) direction. By observing scanning electron microscopy (SEM), it was seen that iron oxide films were relatively homogeneous uniform and had a good adherence to the glass substrates. The grain size was found (by RX) between 19 and 25 nm. The composition of these films was examined by X-ray photoelectron spectroscopy and electron probe microanalysis (EPMA). These films exhibited also a transmittance value about 80% in the visible and infrared range. The cyclic voltammetry study showed ...

Energy Technology Data Exchange (ETDEWEB)

This paper describes the effects of SiC coating on the oxidation resistance of C/C composites in combusting fields, which are expected to be applied to high temperature structural materials at over 1770K. The coating methods employed were CVD and pack cementation. The time changes in weight loss of the specimens were measured at temperatures of 1770K and 1900K under the equivalence ratio of 0.9 generated by methane-air combustion, and the surface of the specimens before and after the experiment was observed by SEM. Although the weight loss of the specimens coated by the CVD method was minimal, the coating layer was easily peeled off from the substrate. On the other hand, the layer of the specimens coated by the pack cementation method was stable and adhered to the substrate, but the substrate was degraded because of penetration of oxygen through the pores in the layer. To cover the pores, the specimens were additionally ...

International Nuclear Information System (INIS)

The mechanism of trypsin inactivation by intact Hymenolepis diminuta has been investigated by biochemical and autoradiographic methods. Although worms inactivate trypsin and chymotrypsin in vitro, no inactivation of other endoproteases (subtilisin, pepsin and papain) could be demonstrated. Trypsin inactivation, as demonstrated by macromolecular substrates (azoalbumin, hemoglobin and casein), could not be detected using low molecular weight synthetic substrates such as N-p-benzoyl-DL-arginine-p-nitroanilide (BAPA) or N-p-tosyl-L-arginine methyl ester (TAME). In addition, the kinetic parameters (K/sub m/ and k_3) for H. diminuta-inactivated trypsin, using BAPA as the substrate, were not different from those of the native enzyme. The number of active sites for both native and inactivated trypsin were determined by titration with p-nitro-phenyl-p'-guanidinobenzoate. Absorbance values for both titrations were found to be ...

International Nuclear Information System (INIS)

Measurements of ion-induced electron emission have been performed with helium and argon ions with energies between 300 and 900 eV on W, W with 10% Ti, Al, Al with 1% Cu, Al with 1% Si, Si, and Be. This article describes many of the important surface characteristics that influence the ion-induced electron emission. For low-energy ions, the substrate material was found to be less important as the velocity of the incident ion decreased. In the case of incident Ar"+ the substrate material had a negligible effect on the emission for this energy range. The presence of an adsorbed layer enhanced emission in all cases. Heating the substrates resulted in oxidation of the surfaces and a subsequent increase in emission. The electron emission from aluminum samples with smaller grain sizes was higher than samples of identical composition with larger grains. This effect is due to the greater number of adsorption sites resulting from the ...

International Nuclear Information System (INIS)

In this work, the effects of substrate temperature that was changed from 100 to 500 "oC on the structural, chemical and electrical properties of carbon films, prepared by direct current magnetron sputtering technique, on 316L stainless steel as bipolar plate had been investigated. Raman spectroscopy and scanning electron microscopy (SEM) were performed to study the structure and the morphology of the deposited films, respectively. The corrosion resistance and the electrical resistivity were carried out by using corrosion tests and four point-probe technique. The results show that the carbon films change the structure from amorphous to graphite-like by increasing temperatures. At the temperatures higher than 300 "oC, the holes and porosities are formed on the film indicating a decrease of film quality. According to our results, corrosion resistance and electrical properties are depended strongly on the substrate temperature.

Science.gov (United States)

A focused ion beam (FIB) technique was applied to cross-sectional specimen preparation to observe an interface between a plasma sprayed coating and an aluminum (Al) substrate by transmission electron microscopy (TEM). The surface of the sprayed coating film has a roughness of several tens of microns. Sputter rates for the coating film and the substrate are greatly different. The rough surface and the difference in sputter rate cause problems in making TEM specimens with smooth side walls. The top surface of the coating film was planerized by the FIB before fabricating the TEM specimen. The interfaces were investigated by TEM and energy-dispersive X-ray (EDX) analysis. The TEM observation revealed that there is a 10 nm thick amorphous layer at the interface between the coating film and substrate. The coating film consists of two kinds of sublayers with bright and dark contrast. The bright contrast sublayers were amorphous ...

Energy Technology Data Exchange (ETDEWEB)

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the ...

Science.gov (United States)

We investigated the effect of pretreatment on the physicochemical characteristics-crystallinity, bed porosity, and volumetric specific surface of soybean hulls and production of cellulolytic enzymes in solid-state fermentation of Trichoderma reesei and Aspergillus oryzae cultures. Mild acid and alkali and steam pretreatments significantly increased crystallinity and bed porosity without significant change inholocellulosic composition of substrate. Crystalline and porous steam-pretreated soybean hulls inoculated with T. reesei culture had 4 filter paper units (FPU)/g-ds, 0.6?IU/g-ds ?-glucosidase, and 45?IU/g-ds endocellulase, whereas untreated hulls had 0.75?FPU/g-ds, 0.06?IU/g-ds ?-glucosidase, and 7.29?IU/g-ds endocellulase enzyme activities. In A. oryzae steam-pretreated soybean hulls had 47.10?IU/g-ds endocellulase compared to 30.82?IU/g-ds in untreated soybean hulls. Generalized linear statistical model fitted to enzyme activity data showed that effects of ...

Science.gov (United States)

Feasibility of depositing continuous films of nano-porous alumino-silicates, primarily zeolites and MCM-41, on metallic and non-metallic substrates was examined with an aim to develop membranes for separation of gaseous mixtures and also for application as hydrogen storage material. Mesoporous silica was deposited in-side the pores of these nano-porous disks with an aim to develop membranes for selective separations. Our study involves supported zeolite film growth on substrates using in-situ hydrothermal synthesis. Faujasite, Silicalite and Mesoporous silica have been grown on various metallic and non-metallic supports. Metallic substrates used for film growth included anodized titanium, sodium hydroxide treated Titanium, Anodized aluminum, and sintered copper. A non-metallic substrate used was nano-porous aluminum oxide. Zeolite film growth was characterized using Scanning Electron Microscope (AMRAY ...

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This final report for the Swiss Federal Office of Energy (SFOE) presents the results of a project that involves the building of a joint biogas plant serving 60 farmers and industrial companies with an annual processing capacity of 45,000 tons. The plant is to produce biogas to be fed into the gas mains and will not only reduce nutrient loading in a region with an extensive livestock industry but also reduce carbon dioxide emissions by using the gas as a motor fuel. The importance of the project with respect to both the environment and energy policy-making is discussed and the costs involved are examined. Details are presented on the technology used and on the material flows involved. Figures are quoted on energy production. The various biogenic substrates used, such as food wastes, waste oils, cereal wastes and used mushroom substrates, are discussed, as is the use of the solid and liquid outputs of the digester in farming activities.

Energy Technology Data Exchange (ETDEWEB)

The nickel-rich superalloys Alloy 600 and Alloy 800 have been corroded in mildly alkaline deuterated aqueous conditions typical of secondary coolant circuits in a nuclear power station. The oxide films and substrates of these alloys have been analysed by imaging SIMS depth profiling, which makes it possible to describe elemental distribution in all three dimensions. The measurement of the distribution of the secondary ions NiO[sup -], FeO[sup -] and CrO[sup -] appears useful for detailing the behaviour of nickel, iron and chromium within oxidized phases. The measurement of D[sup -] distribution outlines the extent of oxide hydration. For Alloy 800, evidence of sodium migration into the grain boundaries of the alloy substrate is found. For Alloy 600, no grain boundary sodium ingress can be identified under comparable corrosion conditions. (author).

British Library Electronic Table of Contents (United Kingdom)

Summary Isomalto-oligosaccharides (IMO) belong to a group of prebiotics that can significantly increase the number of protective gut microflora. A one-step method using neopullulanase (NPN) in conjunction with saccharifying -amylase (SAA) for the bioconversion of rice starch into IMO was investigated. Purified rice starch slurry (30% w/w) was mixed with NPN (3.5 U g-1 starch substrate) and SAA (6.5 U g-1 starch substrate) and the slurry was incubated at 57 C for 92-h under constant stirring. The carbohydrate composition of the resulting syrup was analysed by high performance liquid chromatography (HPLC) and the dextrose equivalent (DE) determined by titration. The amount of IMO in the syrup reached maximum (59.2%, dry basis) after 72-h of bioconversion. The concentration of glucose and mal...

International Nuclear Information System (INIS)

Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.

CERN Document Server

substrate). Within each group of simulations, three lubricant film thicknesses are studied to examine the effect of varying lubricant thickness. Statistical data are collected from each simulation and presented in this work. Via these data, together with the evolution, of atomic and molecular configurations, a very detailed picture of the properties of this thin film interface is presented. In particular, we conclude that perfluoropolyether lubricant forms distinct molecular layers when confined between two substrates, the rate of heat generation under shearing conditions typical of those in a head-disk interface is insufficient for thermal mechanisms to result directly in lubricant degradation, and mechanical stresses attained in the head-disk interface are unlikely to result in any significant degree of lubricant degradation. This thesis examines the tribology of a head-disk interface in an operating hard disk drive via non-equilibrium ...

British Library Electronic Table of Contents (United Kingdom)

On the basis of a numerical model, the temperature and liquid fraction of spray-formed H13 tool steel are calculated as a function of time. Results show that a preheated substrate at the appropriate temperature can lead to very low porosity by increasing the liquid fraction in the deposited steel. The calculated cooling rate can lead to a microstructure consisting of martensite, lower bainite, retained austenite, and proeutectoid carbides in as-spray-formed material. In the temperature range between the solidus and liquidus temperatures, the calculated temperature of the spray-formed material increases with increasing substrate preheat temperature, resulting in a very low porosity by increasing the liquid fraction of the deposited steel. In the temperature region where austenite decomposit...

British Library Electronic Table of Contents (United Kingdom)

In situ composite coating of hydroxyapatite (HA)/TiO2 were produced on titanium (Ti) substrate by micro-arc oxidation coupled with electrophoretic deposition (MAO&EPD) technique with different concentrations of HA particles in the 0.2M NaOH electrolyte solution. The surface morphology and chemical composition of the hybrid coating were effected by HA concentration. The amount of HA particles incorporated into coating layer increased with increasing HA concentration used in the electrolyte solution. The corrosion behavior of the coating layer in simulated body fluids (SBF) was evaluated using a potentiodynamic polarization test. The corrosion resistance of the coated sample was increased compared to the untreated Ti sample. The in vitro bioactivity assessment showed that the MAO&EPD treated...

International Nuclear Information System (INIS)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

British Library Electronic Table of Contents (United Kingdom)

Optimization of nonviral gene delivery typically focuses on the design of particulate carriers that are endowed with desirable membrane targeting, internalization, and endosomal escape properties. Topographical control of cell transfectability, however, remains a largely unexplored parameter. Emerging literature has highlighted the influence of cell-topography interactions on modulation of many cell phenotypes, including protein expression and cytoskeletal behaviors implicated in endocytosis. Using high-throughput screening of primary human dermal fibroblasts cultured on a combinatorial library of microscale topographies, we have demonstrated an improvement in nonviral transfection efficiency for cells cultured on dense micropit patterns compared to smooth substrates, as verified with flow...

Energy Technology Data Exchange (ETDEWEB)

Pd/n-Si and Pd/n-GaAs devices have been irradiated from high energy ({approx}100 MeV) heavy ions of Au{sup 7+} (gold) and Si{sup 7+} (silicon) to study the irradiation effects in these junction devices on semiconductor substrates. The devices have been characterized from I-V and C-V studies for electronic flow characterization. It has been found that the devices become high resistive on the irradiation and the substrates change the conductivity type from n- to p- on the irradiation of fluence of {approx}10{sup 12}-10{sup 13} ions/cm{sup 2}. The change in conductivity type has been understood as a result of creation of deep acceptors on the irradiation.

Energy Technology Data Exchange (ETDEWEB)

Nanoscale islands of Cu?O have been synthesized on single crystal SrTiO? (100) substrates using oxygen plasma assisted molecular beam epitaxy (MBE). Island growth location has been controlled by using an ex-situ Ga? focused ion beam (FIB) to modify the growth surface in discrete locations prior to island sythesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex-situ AFM study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

International Nuclear Information System (INIS)

Off-axis electron holography is used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope (TEM) using focused ion beam (FIB) milling from the substrate side of the semiconductor device. The measured electrostatic potential is compared with results obtained from TEM specimens prepared using the more conventional 'trench' FIB geometry. The use of carbon coating to remove specimen charging effects, which result in electrostatic fringing fields outside 'trench' specimens, is demonstrated. Such fringing fields are not observed after milling from the substrate side of the device. Analysis of the measured holographic phase images suggests that the electrically inactive layer on the surface of each FIB-milled specimen typically has a thickness of 100 nm.

Energy Technology Data Exchange (ETDEWEB)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

British Library Electronic Table of Contents (United Kingdom)

Cellulose sausage cellulose casings are used extensively in the manufacture of sausages in meat packaging. After stripping the meat, spent casings mainly contain cellulose and residual meat juice with salt, nitrate and nitrite. Disposal of spent sausage casings has serious economic and environmental concerns for the sausage industry. This work describes bioconversion of spent cellulose casings (SCC) into enzymes, lactic acid and ethanol by using cellulolytic fungi, lactobacillus and yeasts. The solid substrate cultivation (SSC) of Trichoderma reesei RUT C-30 on SCC and blends gave a maximum of 152 filter paper cellulase (FPase) activity and about 100 carboxymethylcellulase activity (CMCase)/g dry weight substrate. The SSC produced enzyme-rich casing with 50 FPase when directly mixed as suc...

British Library Electronic Table of Contents (United Kingdom)

We have developed efficient spectrally selective infrared (IR) emitters that can be utilized for thermophotovoltaic (TPV) power generation by using stainless steel (SUS304) substrates coated with b- FeSi2 thin films. To develop spectrally selective emitters, we theoretically propose antireflection (AR) coatings consisting of a single layer of a dielectric material having a high refractive index (~5) and are appropriate for use with metals such as stainless steels in the IR region. This type of AR coating is fabricated by sputtering a b- FeSi2 thin film on a polished SUS304 substrate. The reflectance in the IR region is successfully reduced to less than 10%. In addition, the AR properties are stable even at 700 K in air. Therefore, metals with AR coatings of b- FeSi2 can be applied to IR em...

Energy Technology Data Exchange (ETDEWEB)

This paper describes a feasibility demonstration of a thermal scanning NDE system for thermal spray coatings. Non-bonds were detected between several types of coatings and their substrates. Aluminum anti-skid coatings having very rough surfaces were included. A technique for producing known non-bond areas for calibrating and demonstrating NDE methods was developed.

Energy Technology Data Exchange (ETDEWEB)

This report discusses the activities of two major groups of forest soil microorganisms, the bacteria and the fungi. Special attention is paid to their participation in the decay of major forest litter substrates, including leaves, branches and roots. The influence of bacteria and fungi in symbiotic associations with woody plant roots upon the cycles of carbon and nitrogen is described. The impacts of certain forest mamagement alternatives are assessed in terms of the creation of elimination of suitable environments for the activity of soil microorganisms. A bibliography is included. 507 refs., 1 tab.

International Nuclear Information System (INIS)

The application of photopolymerisation (UV) and electron beams (EB) technologies in radiation rapid cure (PRC) processing is discussed. The chemistry associated with such reactions and the mechanisms of the processes are treated. The occurrence of concurrent grafting to substrate with radiation curing of films is shown to be an advantage in enhancing the properties of certain finished products. The parameters influencing the optimum grafting yield in such PRC processes are discussed. In many applications, the chemistry of such processes combined with the machine, specially for EB is shown. (author).

Energy Technology Data Exchange (ETDEWEB)

We have used polished stainless steel as a mirror substrate to provide focusing of soft x-rays in grazing incidence reflection. The substrate is bent to an elliptical shape with large curvature and high stresses in the substrate require a strong elastic material. Conventional material choices of silicon or of glass will not withstand the stress required. The use of steel allows the substrates to be polished and installed flat, using screws in tapped holes. The ultra-high-vacuum bender mechanism is motorized and computer controlled. These mirrors are used to deliver focused beams of soft x-rays onto the surface of a sample for experiments at the Advanced Light Source (ALS). They provide an illumination field that can be as small as the mirror demagnification allows, for localized study, and can be enlarged, under computer control,for survey measurements over areas of the surface up to several ...

International Nuclear Information System (INIS)

We studied the strain introduced in a Si(111) substrate due to MeV ion implantation using extremely asymmetric x-ray diffraction and measured the rocking curves of asymmetrical 113 diffraction for the Si substrates implanted with a 1.5 MeV Au"2"+ ion at fluence values of 1x10"1"3, 5x10"1"3, and 1x10"1"4/cm"2. The measured curves consisted of a bulk peak and accompanying subpeak with an interference fringe. The positional relationship of the bulk peak to the subpeak and the intensity variation of those peaks with respect to the wavelengths of the x rays indicated that crystal lattices near the surface were strained; the lattice spacing of surface normal (111) planes near the surface was larger than that of the bulk. Detailed strain profiles along the depth direction were successfully estimated using a curve-fitting method based on Darwin's dynamical diffraction theory. Comparing the shapes of resultant strain profiles, we found that a strain ...

International Nuclear Information System (INIS)

The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA. (author).

UK PubMed Central (United Kingdom)

Insulin-degrading enzyme (IDE) degrades insulin and other peptides, including the Aβ peptide of Alzheimer’s disease. However, the mechanism by which IDE acts on its substrates...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The invention relates to a pulsed laser ablation method of metals and/or dielectric films from the surface of a wafer, printed circuit board or a hybrid substrate. By utilizing a high-energy ultra-short pulses of laser light, such a method can be used to manufacture electronic circuits and/or electro-mechanical assemblies without affecting the material adjacent to the ablation zone.

Energy Technology Data Exchange (ETDEWEB)

X-ray diffraction was used to monitor the {ital in} {ital situ} reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical thickness of 18 A. During both phases of growth sustained intensity oscillations are seen that correspond to a layerwise consumption of the substrate at the buried interface.

Energy Technology Data Exchange (ETDEWEB)

In order to fabricate high temperature superconducting tapes for power applications, the authors have analyzed different buffer layer architectures grown on textured Ni substrates suitable for YBCO deposition. Due to its optimal lattice matching the studied structures present as top layer a CeO{sub 2} film. The deposition of CeO{sub 2} on Ni substrates was performed by pulsed laser ablation and by e-beam evaporation at different temperatures. The films obtained by the two deposition techniques have not optimal structural properties, having a polycrystalline component. The misorientation of CeO{sub 2} is probably due to the formation of NiO at the interface between the film and the substrate during the deposition process even if no oxygen is introduced. In order to prevent Ni oxidation an intermediate 2000 {angstrom} Pd thick film was deposited by e-beam. Furthermore, the lattice mismatch between Pd and CeO{sub 2} is smaller ...

Energy Technology Data Exchange (ETDEWEB)

The process operation of the hot wall vapor deposition method, formation of dry organic thin film and the control of molecular arrangement were described. This equipment included a substrate on the upper end of the hot wall tube and the vapor source at the lower end. The remarkable features are the hot wall tube which plays the role to hold vaporizing molecules to the high temperature and to transport molecules, and the flip flop mechanism which gives some idle period for the molecular vaporization by shutter closing. Several experiments were carried out by using stearic acid and by changing the distance S from the upper end of hot wall quartz tube to the substrate, the furnace temperature T{sub f} and the substrate temperature T{sub s}. When T{sub f} is equal to or less than the melting point of stearic acid, molectles are preferentialy made to vertical arrangement. In the case of T{sub f} more than the melting point, the ...

Energy Technology Data Exchange (ETDEWEB)

We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on platinized silicon and LaNiO{sub 3}-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of {approx}960 and dielectric loss of {approx}0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of {approx}820 and dielectric loss of {approx}0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 x 10{sup 6} V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of {approx}8.1 x 10{sup -9} A/cm{sup 2} and mean breakdown field strength of 1.7 x 10{sup 6} ...

Energy Technology Data Exchange (ETDEWEB)

Following a postulated meltdown accident, the integrity of containment building structural material under attack by hot molten core debris and the safeguard of environment against radiological releases constitutes the final line of defense in PAHR safety assessment. Such assessment requires a good knowledge of UO/sub 2//interaction and penetration with different types of concrete. The present study focuses on the phenomena associated with core debris interaction/penetration with substrate basalt concrete.

Energy Technology Data Exchange (ETDEWEB)

[sup 13]C epitaxial diamond films have been grown on [sup 12]C-type IIb diamond substrates doped with boron, using electron assisted chemical vapor deposition. The relation between etch pits to dislocations in [sup 13]C diamond film and the broadening of the first-order Raman peak was examined. The reactant gas was [sup 13]CH[sub 4] of > 99% purity. The substrate temperature was varied from 943 to 1300 C. The uneven surface morphology was confirmed by atomic force microscopy (AFM) and laser microscopy. From 943 to 1030 C, etch pit rows along left angle 100 right angle were observed. At 991 C, the etch pit density on a row was 3300 to 5000 pits/cm. The Ar[sup +] laser beam was focused on a transparent area near the row of etch pits, where the boron impurity of the substrate is less than several 10 ppm. The first-order Raman line of [sup 13]C epitaxial diamond film was broadened to 3.6-4.0 cm[sup -1]. The line broadening ...

CERN Document Server

We derive the expression for spontaneous emission rate in finite one-dimensional photonic crystal with arbitrary defects using the effective resonator model to describe electromagnetic field distributions in the structure. We obtain explicit formulas for contributions of different types of modes, i.e. radiation, substrate and guided modes. Formal calculations are illustrated with a few numerical examples, which demonstrate that the application of effective resonator model simplifies interpretation of results.

UK PubMed Central (United Kingdom)

Microorganisms can degrade saturated hydrocarbons (alkanes) not only under oxic but also under anoxic conditions. Three denitrifying isolates (strains HxN1, OcN1, HdN1) able to grow under anoxic conditions...Full Text Available

UK PubMed Central (United Kingdom)

The stable hydrogen (δ²H) and oxygen (δ¹⁸O) isotope ratios of organic and inorganic materials record biological and physical processes through the effects of substrate...Full Text Available

International Nuclear Information System (INIS)

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the ...

Science.gov (United States)

Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and insulators), and ...

International Nuclear Information System (INIS)

Upper and lower thermal limits and temperature dependent growth were determined for a number of organisms (or populations) representing various functional groups of stream ecosystems (microconsumers, producers, and macroconsumers, shredders, collectors, scrapers, and predators). Although temperature functions as an overall control parameter, organic substrate (microconsumers) and inorganic nutrients (microconsumers and producers), light (producers) and food quality (macroconsumers) can modify thermal responses. Stream microorganisms typically grow below their thermal optima, community composition being determined by those that can manage the maximum growth at a given temperature utilizing a given organic substrate. Producers in first to third order streams are generally light limited (although nutrient availability is also important). Food quality, primarily a function of microbial biomass in the case of detritivores. can compensate for ...

Energy Technology Data Exchange (ETDEWEB)

Self-assembled monolayers (SAMs) on various metal, semiconductor or insulator substrates can be easily modified with specific functional groups of interest and have promising applications in surface wetting (hydrophobic/hydrophilic modification), tribology, corrosion protection, sensor electrodes modification, molecular and biomolecular recognition, protein adsorption, cell adhesion, and molecular- or organic-electronic device fabrications. In this paper, we highlight recent progress in the development of SAMs on solid substrates as well as their practical applications, with particular emphasis on the characterization of self-assembled aromatic thiol monolayers with different functional groups on Au(1 1 1) using synchrotron-based photoemission spectroscopy and near-edge X-ray absorption fine structure measurements. The SAM-related molecular orientation, electronic structures, and chemical bonding are presented. Using copper(II) phthalocyanine ...

International Nuclear Information System (INIS)

Hybrid organic-inorganic coatings with phosphonate functionalities have been synthesized and evaluated as prospective surface treatments for magnesium materials. These coatings have been processed via a sol-gel route by hydrolysis and condensation of a mixture of diethylphosphonatoethyltriethoxy-silane and tetraethoxy-silane with variable molar ratios. The coatings morphology and the surface chemistry at the coating/substrate interface have been characterized using scanning electron microscopy, X-ray photoelectron spectroscopy, "3"1P nuclear magnetic resonance spectroscopy, and time-of-flight secondary ion mass spectrometry. The corrosion protection performance of the coatings deposited on magnesium alloy AZ31B has been examined by a group of electrochemical techniques including potentiodynamic polarization and electrochemical impedance spectroscopy. In addition, a scanning Kelvin probe technique has been used to investigate interfacial properties of the coatings. ...

International Nuclear Information System (INIS)

In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.

Energy Technology Data Exchange (ETDEWEB)

Following tuber excision from the mother plant sucrose synthase activity fell from 3,120 to 960 nmol/g.f. wt./h within 7 days and starch synthesis ({sup 14}C sucrose incorporated into isolated discs) from 23 to 7 nmol/g.f. wt./h. While the maximum catalytic activity of sucrose synthase was more than sufficient to account for the observed rate of starch synthesis a maximum of 27% of sucrose incorporated by discs was converted into starch within 3 h. This compared with 80% conversion of {sup 14}C glucose incorporated. Tuber excision also reduced the rate of starch biosynthesis with glucose as a substrate (from 206 to 64 nmol/g.f. wt./h). The activities of UDPG-pyrophosphorylase, PPi-PFK, ATP-PFK, starch synthase and hexokinase (glucose or fructose substrates) were unaffected by tuber removal. ADPG pyrophosphorylase activity was reduced from 8,000 to 4,500 nmol/g.f. wt./h. Preliminary experiments indicate that the decline in sucrose synthease ...

Energy Technology Data Exchange (ETDEWEB)

Highly resistant, high-transmittance woodceramic thin films were prepared using rf magnetron sputtering of a woodceramic disk in argon plasma. A film series was deposited based on substrate temperature, which was varied from 50 to 500 degree C. The film's electrical and optical properties depended on substrate temperature. Films deposited below 300 degree C were insulative, {rho}>10{sup 10} {omega} {center_dot} cm. Films deposited at 50 degree C had a density of 1.9-2.2 g/cm{sup 3} comparable to that of single crystal graphite. Below 200 degree C, films had higher transmittance than typical DLC films in the visible and infrared region. Infrared C-H absorption spectrum was observed by Ft-IR and there exist two types of bonding corresponding to sp{sup 2} or SP{sup 3}. (author)

International Nuclear Information System (INIS)

Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical absorbance of the film was of the order of 10"5 cm"-"1. The optical band gap of films was found to be 2.26 and 2.20 eV for the films deposited using methanolic and ...

International Nuclear Information System (INIS)

Slurry aluminizing is one method of protecting titanium alloys and intermetallics at temperatures at which oxidation would otherwise significantly degrade mechanical properties. The technique produces a continuous layer of alumina-forming TiAl_3 on exposed surfaces. The influence of composition, film thickness, and diffusion temperature upon the oxidation resistance of these slurry aluminides was studied in cyclic tests to 816degC (1500deg F). Degradation of slurry aluminized #beta#-titanium alloy and #alpha#-Z titanium aluminide intermetallic occurs by localized oxidation at cracks in the coating layer. These cracks are probably due to mismatch of coefficients of thermal expansion between the coatings and substrates. Addition of silicon to the slurry modifies the oxidation behaviour around a crack by introducing a continuous layer of titanium silicide at the boundary of the aluminide coating and substrate, thereby enhancing oxidation ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail ...

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}