WorldWideScience
1

Nanocrystalline MnO thin film anode for lithium ion batteries with low overpotential  

Energy Technology Data Exchange (ETDEWEB)

Nanocrystalline MnO thin film has been prepared by a pulsed laser deposition (PLD) method. The reversible lithium storage capacity of the MnO thin film electrodes at 0.125C is over 472 mAh g{sup -1} (3484 mAh cm{sup -3}) and can be retained more than 90% after 25 cycles. At a rate of 6C, 55% value of the capacity at 0.125C rate can be obtained for both charge and discharge. As-prepared MnO thin film electrodes show the lowest values of overpotential for both charge and discharge among transition metal oxides. All these performances make MnO a promising high capacity anode material for Li-ion batteries. (author)

2009-04-15

2

Effects of sputtering pressure on the characteristics of lithium ion conductive lithium phosphorous oxynitride thin film  

British Library Electronic Table of Contents (United Kingdom)

Lithium phosphorous oxynitride(Lipon) thin films as a lithium ion conductive electrolyte were prepared by radio frequency reactive sputtering in N2 plasma. The properties of the amorphous Lipon solid electrolyte were investigated as a function of N2 pressure during reactive sputtering. The ionic conductivity and the electrochemical stability of Lipon thin films improved drastically as the N2 pressure decreased. The ionic conductivity closed to 10?6 S cm?1 and obtained a stability window of 1.0?5.0 V with an N2 pressure of 5 mTorr, where the number of nitrogen bonds between the phosphate groups were more than those formed at higher pressure. It was possible to fabricate the Li//LiCoO2 complete thin film battery using this Lipon solid electrolyte, which exhibited excellent discharge characte...

2006-01-01

3

Structural, optical, electrical and dielectrical properties of electrosynthesized nanocrystalline iron oxide thin films  

International Nuclear Information System (INIS)

Electrodeposition of semiconducting iron oxide (Fe_2O_3) thin film was carried out from an alkaline sulphate bath. A 0.1 M ferrous sulphate (FeSO_4#centre dot#7H_2O) was complexed with 0.1 M citric acid. By addition of 1 N NaOH, pH of the solution was made alkaline (pH=9) and deposition of iron oxide (Fe_2O_3) thin films was carried out potentiostatically at room temperature (300 K). From cyclic voltametry (CV), electrochemical studies were carried out for deposition of iron oxide thin films. The XRD studies reveal that Fe_2O_3 with epsilon (#epsilon#) phase having monoclinic crystal structure is formed. By observing scanning electron microscope (SEM), it is seen that iron oxide films were homogeneous, uniform and well covered to surface of the substrate. Grain size was found to be in nanometers range from XRD analysis. The optical band gap of Fe_2O_3 ...

2003-09-28

4

Preparation and characterization of iron oxide thin films by spray pyrolysis using methanolic and ethanolic solutions  

International Nuclear Information System (INIS)

Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical absorbance of the film was of the order of 10"5 cm"-"1. The ...

2006-01-15

5

Electrochemical deposition of indium sulfide thin films using two-step pulse biasing  

British Library Electronic Table of Contents (United Kingdom)

Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.

2008-01-01

6

The Study of Phosphors Efficiency and Homogeneity using a Nuclear Microprobe  

Energy Technology Data Exchange (ETDEWEB)

Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output ...

2000-12-08

9

THIN FILM ACOUSTO-OPTIC DEVICES - REVIEW AND ...  

Science.gov (United States)

... Abstract : MANY THIN FILM ACOUSTO-OPTIC INTERACTION EXPERIMENTS FOR ... CONVERTERS, AND FOR FAST SWITCHES HAVE BEEN ...

1974-11-01

12

Preparation and characterization of CdS nanoparticles and CdS/polyacrylonitrile nanocomposites by {gamma}-irradiation  

Energy Technology Data Exchange (ETDEWEB)

There has been considerable interest in producing and studying nanoparticle materials because of the effect of size on their structure, physical and chemical structure. Most studied nanoparticle semiconductors belong to the II-VI group, as they are relatively easy to synthesize and are generally prepared as particulates or in thin film form. Among II-VI compounds, CdS is one of the most studied materials. There are different ways to synthesize CdS nanoparticles such as colloidal particles, chemical decomposition, sol-gel, gas evaporation, magnetron sputtering, electrostatic deposition, and etc. {gamma}-irradiation is one of the effective methods for synthesis of nanomaterials. These nonomaterials have been extensively used in the preparation of nanocrystalline metals, metal oxides, and metal-polymer composites. However, The preparation of CdS nanoparticle and CdS/ polyacrylonitrile nanocomposite by {gamma}-irradiation ...

2001-11-15

19

Thin Film Solar Cells and Solar Cell Testing, Volume II Proceedings of the Fourth Photovoltaic Specialists Conference  

Science.gov (United States)

Thin film solar cells and solar cell testing - photovoltaic cells, radiation damage to cadmium sulfide solar cells, and airplane testing of solar cells

1964-01-01

20

Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO 2 Substrates  

CERN Document Server

Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO 2 Substrates

2006-01-01

21

Powdering Characteristics of a Thin Film Evaporator: Drying and Powdering of a Solution.  

Science.gov (United States)

A thin-film evaporator requires only a short heating time to concentrate a solution since it has a high thermal efficiency and has a small capacity. Thus, the chemical industry often uses this type of evaporator for concentrating materials that are subjec...

1983-01-01

22

Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures  

UK PubMed Central (United Kingdom)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

2008-01-01

24

Mechanical Properties of Microelectronics Thin Films: Silicon ...  

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

1989-10-01

25

Analysis of concentrating and drying processes in a thin-film evaporator  

International Nuclear Information System (INIS)

(Jun 1978). United States Chino, K. Hitachi Research Lab., Japan Kikuchi,

1978-06-18

26

A refractory metal thin film evaporator for backscattering studies  

International Nuclear Information System (INIS)

(1 Feb 1975). Netherlands Rollin, DF Robinson, JE McMaster Univ.,

1975-02-01

27

A HREELS Investigation of Ethylene on Pt Model Catalysts  

Science.gov (United States)

... analyzer section for angle resolved measurements, and a thin film evaporator with a quartz crystal microbalance to measure the mass deposition. ...

1990-05-20

28

Advanced phosphors  

Energy Technology Data Exchange (ETDEWEB)

This invention relates to new phosphor materials and to combinatorial methods of synthesizing and detecting the same. In addition, methods of using phosphors to generate luminescence are also disclosed.

2000-01-01

29

Polycrystalline MBE-grown GaAs for solar cells  

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

1997-02-01

30

Optical pressure on thin film caused by a Gaussian beam-generated evanescent wave  

International Nuclear Information System (INIS)

The optical pressure exerted o a thin film, which is locked in the evanescent field formed at the plane interface with a totally-reflected Gaussian beam, is investigated. Some calculations of the pressure on the film caused by the evanescent field are presented in the different conditions of film thickness, film position, incident angle and polarization of a gaussian beam. The results show that the pressure exertion on the thin film can change from pushing to pulling as the parameters are varied. In particular, we find that the direction of optical pressure can act oppositely at the different positions of the film surface in the evanescent field.

1994-11-01

31

Emittance theory for thin film selective emitter  

Energy Technology Data Exchange (ETDEWEB)

Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

1994-08-01

33

Significance of microstructure for a MOCVD-grown YSZ thin film gas sensor  

Energy Technology Data Exchange (ETDEWEB)

The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

1996-11-01

34

Review of Polyarylacetylene Matrices for Thin-Walled ...  

Science.gov (United States)

... After strip- ping off the chloroform, the dibromo ethyl (EDBEB) compounds are separated from the m-BDBEB using a thin film evaporator. ...

1989-09-25

35

Production of Jet Fuels from Coal-Derived Liquids. Volume 12. ...  

Science.gov (United States)

... The phenol and cresylic acid stream is flashed in a thin film evaporator over a concentrated sulfuric acid mixture to remove pyridine type substances ...

1989-12-01

36

ELECTRICAL AND OPTICAL PROPERTIES OF LEAD-TIN ...  

Science.gov (United States)

... Abstract : Single crystals of Pb(x)Sn(1-x)Te alloy have been grown with o = or thin film evaporator. ...

1969-09-03

37

Density Gradients for Isolation of Mononuclear Blood Cells for ...  

Science.gov (United States)

... to-continuum X-ray intensity ratio [5]. For ence in the means [7]. In addition, washing samples on thin films, the characteristic X- lymphocytes in NH ...

2011-05-15

38

X-ray diffraction studies of palladium silicide thin films  

Energy Technology Data Exchange (ETDEWEB)

The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.

1985-01-01

39

UV photoelectron yield spectroscopy of chalcopyrite structure Cu-In-Se thin films  

International Nuclear Information System (INIS)

Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).

40

Thin film adhesion by nanoindentation-induced superlayers. Final report  

Energy Technology Data Exchange (ETDEWEB)

This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

2001-06-01

41

Purification of bidentate organophosphorous extractants  

Energy Technology Data Exchange (ETDEWEB)

Crude N,N-dialkylcarbamoylmethylphosphonates and phosphine oxide extractants, and particularly crude dihexyl N,N-diethylcarbamoylmethylphosphonate and octylphenyl N,N-diisobutylcarbamoyl phosphine oxide, are purified by distilling the crude materials in a thin film evaporator. Preferably, the crude materials are reacted with concentrated hydrochloric acid and then with aqueous sodium hydroxide prior to distillation in the thin film evaporator to hydrolyze impurities contained in them. The purified extractants are useful for extracting actinides and lanthanides from liquid waste streams. (author).

1990-12-19

42

Purification of bidentate organophosphorous extractants  

International Nuclear Information System (INIS)

Crude N,N-dialkylcarbamoylmethylphosphonates and phosphine oxide extractants, and particularly crude dihexyl N,N-diethylcarbamoylmethylphosphonate and octylphenyl N,N-diisobutylcarbamoyl phosphine oxide, are purified by distilling the crude materials in a thin film evaporator. Preferably, the crude materials are reacted with concentrated hydrochloric acid and then with aqueous sodium hydroxide prior to distillation in the thin film evaporator to hydrolyze impurities contained in them. The purified extractants are useful for extracting actinides and lanthanides from liquid waste streams. (author).

1990-05-16

43

Multilayer structures with giant magnetoresistance  

International Nuclear Information System (INIS)

The phenomenological description of the giant magnetoresistance effect as well as discussion of the requirements which must be fulfilled in giant magnetoresistance thin film structures are given in the first part of our review. In the second part the magnetization reversal and giant magnetoresistance effect of antiferromagnetically coupled multilayers, spin Valve and pseudo-spin valve thin film structures are explained. For these structures we also discuss the influence of the structure defects such as surface roughness and pinholes on the giant magnetoresistance effect. (author)

2001-09-23

44

A simple and continuous on-state current model of polysilicon thin-film transistors for circuit simulation  

Energy Technology Data Exchange (ETDEWEB)

A simple and continuous model for the on-state current of polysilicon thin-film transistors, suitable for implementation in circuit simulators, is presented. The model includes the potential barrier at the grain boundaries, the channel length modulation and the excess current due to impact ionization. Comparison between measured output characteristics and the model shows excellent agreement over wide range of bias voltages and for devices with different gate lengths.

2005-01-01

45

Turning the Moon into a Solar Photovoltaic Paradise  

Science.gov (United States)

Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar ...

2006-01-01

46

On the relation between morphology and elastic properties in amorphous columnar thin films  

International Nuclear Information System (INIS)

The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, ...

2002-07-07

47

Formation and capacitance of Nb{sub 2}O{sub 5} thin film on aluminum foil by sol-gel process; Zoru-geru ho niyoru aruminiumuhakujo eno Nb{sub 2}O{sub 5} hakumaku no sakusei to yoryotokusei  

Energy Technology Data Exchange (ETDEWEB)

Nb{sub 2}O{sub 5} thin films were formed on aluminum foils by a sol-gel process in order to increase the capacitance of the aluminum foils which are used as aluminum electrolytic capacitors. Investigations focussed on the preparation and characterization of the coating solution, the formation of Nb{sub 2}O{sub 5} thin films on aluminum foils, and the heat treatment and anodization of the films. The phase transition and electrical properties, such as capacitance, leakage current, and withstand voltage of the Nb{sub 2}O{sub 5} thin films were also measured. The Nb{sub 2}O{sub 5} thin films annealed at temperatures below 550 degree C were found to be amorphous, but they were crystallized to the orthorhombic phase by annealing at temperatures higher than 580 degree C. The capacitance of the coated samples increased with an ...

1999-12-01

48

Achievement report for fiscal 1998. Research and development on a new manufacturing method for functional thin films suitable for recycling, and their application to colored glasses (the second year); 1998 nendo seika hokokusho. Recycle ni tekishita kinosei usumaku no shinki seizoho to chakushoku glass eno oyo ni kansuru kenkyu kaihatsu (dai 2 nendo)  

Energy Technology Data Exchange (ETDEWEB)

A new thin film manufacturing method is established to add a function to glass material surface, as a new material technology which harmonizes with global environment, and is suitable for resource re-utilization and energy conservation. It is intended to develop a leading technology to promote recycling of colored glasses by applying this technical method to colored glasses. Fiscal 1998 has implemented subsequently to fiscal 1997 the following subjects in the three research items composed of a new manufacturing method of functional thin films, application of the functional thin films to colored glasses, and the comprehensive investigative studies: establishment of an industrial manufacturing method for color coating liquid and evaluation of basic characteristics of the colored functional thin films, optimization of ...

1999-03-01

49

Study of copper foam-supported Sn thin film as a high-capacity anode for lithium-ion batteries  

Energy Technology Data Exchange (ETDEWEB)

Three-dimensional porous Sn thin film electrodes were prepared by electroless deposition on copper foam, then its morphology and electrochemical property were studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), electrochemical cycling test and cyclic voltammetry (CV). The porous framework and micro-holes have shown a great structure advantage in restricting severe volume changes when the Sn thin film was employed as anode for lithium-ion battery. The film electrode of sample C with an initial capacity of 676 mAh g{sup -1} showed good cycle performance displayed by retaining a capacity of 313 mAh g{sup -1} after 100 cycles.

2009-10-01

50

Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector  

Energy Technology Data Exchange (ETDEWEB)

As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.

2010-02-19

51

Pulsed laser deposition of titanium-carbonitride thin films  

Energy Technology Data Exchange (ETDEWEB)

The goal of this research program is to determine whether pulsed laser deposition is an effective alternative method for growing TiCN thin films. Pulsed laser deposition (PLD) is chosen because of its well-documented capability for growing uniform, stoichiometric films in ultra-high vacuum or gaseous environments. Processing of thin films by PLD is also achieved at relatively low temperatures compared with CVD processing. Given these attributes, the primary objectives in this article are to determine whether nitrogen may be readily incorporated into films resulting from the laser-ablation of TiC in an N{sub 2} environment, determine what effect nitrogen has on mechanical properties, and determine whether nitrogen incorporation is strongly influenced by processes unrelated to laser deposition (e.g., thermally-activated surface reactions).

1997-05-15

52

Preparation and photocatalytic property of pyrochlore Bi2Ti2O7 and (Bi, La) 2Ti2O7 films  

British Library Electronic Table of Contents (United Kingdom)

Dopant-free Bi2Ti2O7 thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV?Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La3+ ions can act as a stabilizer of Aurivillus phase BLT and a grain?growth inhibitor in BLT thin films.

2008-01-01

53

Magnetic structures and magnetocrystalline anisotropy in bulk and thin film Fe_3Pt  

International Nuclear Information System (INIS)

Magnetic structures and magnetocrystalline anisotropy (MCA) of tetragonal phase Fe_3Pt with an L1_2 atomic ordering in bulk and thin film are investigated by means of the first-principles full-potential linearized augmented plane-wave method. The results obtained predict that the tetragonal phase, in which the tetragonal distortion with (c/a) = 0.95 makes an asymmetry of magnetic properties along the c-axis (out-of-plane) and a-axis (in-plane), has an out-of-plane MCA. In addition, from the thin film calculations, the presence of surface is found to strongly enhance the out-of-plane MCA.

2008-09-30

54

Local mass transfer (heat transfer) between wall and fluid in a thin-film evaporator  

Energy Technology Data Exchange (ETDEWEB)

The measurement of local heat transfer coefficients is necessary to record the basic phenomena of heat transfer in thin-film apparatuses. For this reason the so-called electrochemical analogy method was developed and used for this application. The electrochemical method implies a specifically composed electrolyte which substitutes the fluid to be evaporated in the thin-film apparatus. Using the redox electrolyte (0,025 kmol/m/sup 3/ K/sub 4/Fe(CN)/sub 6/ resp. k/sub 4/Fe(CN)/sub 6/ and 2nNaOH) the viscosity was, for the first time, thickened until 0.4 Pa s by the help of hydroxyethyl-cellulose.

1983-03-01

55

Influence of sputtering parameters and nitrogen on the microstructure of chromium nitride thin films deposited on steel substrate by direct-current reactive magnetron sputtering  

International Nuclear Information System (INIS)

Chromium nitride thin films were deposited on SA-304 stainless steel substrates by using direct-current reactive magnetron sputtering. The influence of process conditions such as nitrogen content in the fed gas, substrate temperature, and different sputtering gases on microstructural characteristics of the films was investigated. The films showed (200) preferred orientation at low nitrogen content (< 30%) in the fed gas. The formation of Cr_2N and CrN phases was observed when 30% and 40% N_2 were used, with a balance of Ar, respectively. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the morphology and surface topography of the thin films, respectively. Microhardness tests showed a maximum hardness of 16.95 GPa for the 30% nitrogen content.

2010-08-02

56

Characterization of (In1−xAlx)2S3 thin films grown by co-evaporation  

British Library Electronic Table of Contents (United Kingdom)

In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

2010-01-01

57

A nanosized silicon thin film as high capacity anode material for Li-ion rechargeable batteries  

Energy Technology Data Exchange (ETDEWEB)

Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.

2006-07-15

58

Rapid Responding Palladium-Silver Surface Modified Microsensor for Hydrogen  

Science.gov (United States)

Most palladium thin film based hydrogen gas sensors have response and recovery times that are too long to make them useful in vehicular and stationary gas leak detection applications. In contrast, a palladium-silver thin film based microcantilever (MC) hydrogen gas microsensor is reported herein with near ideal response characteristics for use in these hydrogen economy related applications. Specifically, 3-10 second response and recovery times have been measured for these sensors in contrast to previous sensor response measurements of several to tens of minutes using Pd thin film and MC based sensing techniques. The much reduced response times observed in the present study are attributed to a wet chemical Pd-Ag thin film deposition technique and a gas conditioning protocol that produces a highly nanostructured, porous ...

2010-01-01

59

Optical properties of A-15 thin films and single crystals  

Energy Technology Data Exchange (ETDEWEB)

Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.

1980-01-01

60

Optical properties of A-15 thin films and single crystals  

International Nuclear Information System (INIS)

Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.

61

High tunability of pulsed laser deposited Ba0.7Sr0.3TiO3 thin films on perovskite oxide electrode  

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...

2011-01-01

62

High Efficiency Solar Cell on Low Cost Metal Foil Substrate  

Science.gov (United States)

During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...

63

Experimental research of stability of thin films on the basis of depleted uranium as reflecting coating for wavelength of 4.5 nm  

International Nuclear Information System (INIS)

In this paper, we present experimentally determined reflection factors of mirrors based on the depleted uranium and dependence of reflection factor on time of presence of samples on air.

2007-05-21

64

Deposition of NbTe{sub x} thin films using laser ablation: Crystallographic structure and spatial composition of deposits  

Energy Technology Data Exchange (ETDEWEB)

Pulsed laser deposition (PLD) is known for its capacity to reproduce a target composition on a substrate. The authors have used this deposition technique to produce thin films of transition metal chalcogenides. However, the deposits were always deficient in Te relative to the starting material (composed by a refractory metal (niobium) and a chalcogene (tellurium)). Variations of the interreticular distances have been observed with respect to fluence and substrate temperature. The authors show that spatial composition of the films is determined by a degree of crystallinity of deposit and by the reaction of formation of Te{sub 2} molecule within laser induced plume. Two kinds of deposits have been obtained: Nb{sub 5}Te{sub 4}-type thin films which have a one-dimensional structure and NbTe{sub 2}-type thin films which have a two-dimensional structure. While ...

1996-12-31

65

Deposit formation tendency of lubricants at high temperatures  

Energy Technology Data Exchange (ETDEWEB)

A thin film microoxidation test utilizing the concept of the Lubricant Stability Map has been used to study the effect of temperature on deposit formation by lubricants on upper piston locations of low heat rejection engines. The stability maps were established for two formulated lubricants in this study. These two lubricants were also evaluated in a series of engine tests with various piston temperatures. The deposition phenomena observed in the engine tests have been adequately simulated and described by the stability maps. It is concluded that lubricants at upper piston locations are under a thin film condition similar to that achieved by the thin film microoxidation test. The deposit formation trend is determined by the volatility, thermal stability, and oxidative stability of the base stock. Additives have little effect on deposit formation at very high ...

1995-05-01

66

CuBr blue light emitting electroluminescent thin film devices  

British Library Electronic Table of Contents (United Kingdom)

Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...

2011-01-01

67

An investigation of the production of thin films of some materials which undergo phase transitions for optical applications  

CERN Document Server

The aim of this work was to study the possibility of producing a fast switching optical thin film device to react to laser radiation in the visible/near infrared region of the spectrum. The switching mechanism was to be thermally driven. A computer program was written to enable the effects of changes of the refractive index of a component of a multilayer thin film stack to be modelled. Attempts to use the phase transition in vanadium dioxide were unsuccessful because, in the spectral region of interest, the 'open-state' absorption was too great. A class of materials known as 'the bronzes' was identified as being potentially useful. Attempts were made to produce thin films of bronze compounds of vanadium, tungsten and molybdenum by the techniques of conventional thermal evaporation and laser ablation for further studies. The former technique appeared to suffer ...

1995-01-01

68

The effect of temperature on the radiative performance of Ho-YAG thin film selective emitters  

Energy Technology Data Exchange (ETDEWEB)

The authors present the emitter efficiency results for the thin film 25 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) selective emitter from 1000 to 1700 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns) and used to calculate the radiative efficiency. The radiative efficiency and power density of rare earth doped selective emitters are strongly dependent on temperature and experimental results indicate an optimum temperature (1650 K for Ho YAG) for thermophotovoltaic (TPV) applications.

1995-01-01

69

Silicidation in Pd/Si thin film junction-Defect evolution and silicon surface segregation  

Energy Technology Data Exchange (ETDEWEB)

Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

2007-09-25

70

Realization of entirely solid lithium ion batteries; Realisation d`accumulateurs a ions lithium entierement solides  

Energy Technology Data Exchange (ETDEWEB)

This paper presents a prototype of an entirely inorganic lithium ions battery cell. LiCoO{sub 2} thin film cathodes and Li{sub 4/3}Ti{sub 5/3}O{sub 4} thin film anodes have been deposited on Li{sub 3x}La{sub 2/3-x}TiO{sub 3} sintered solid electrolyte pellets and the performances of these battery cells have been tested. (J.S.) 5 refs.

1996-12-31

71

RBS Characterization of Yttrium Iron Garnet Thin Films  

International Nuclear Information System (INIS)

Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)

2008-12-13

72

Polycrystalline thin films -- Structure, texture, properties and applications III. Materials Research Society symposium proceedings: Volume 472  

Energy Technology Data Exchange (ETDEWEB)

The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.

1997-07-01

73

Polycrystalline thin films -- Structure, texture, properties and applications III. Materials Research Society symposium proceedings: Volume 472  

International Nuclear Information System (INIS)

The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.

74

Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS  

British Library Electronic Table of Contents (United Kingdom)

Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.

2011-01-01

75

Gravitational effect on liqui-fillet in horizontal agitated thin-film evaporators  

Energy Technology Data Exchange (ETDEWEB)

A liquid-fillet is formed in front of a rotor blade in the cylinder of a horizontal agitated thin-film evaporator. Its thickness varies due to the gravity while the blade revolves inside the cylinder. In the critical condition, the amplitude of the oscillation becomes infinite and the phase advances 180 degrees. Prior to the critical condition, the experimental data agrees fairly well with the predictions. Near the critical condition, the amplitutde increases and the phase advances 60 degrees. In other words, the transition to the critical condition occurs continuously. (6 figs, 1 ref)

1988-04-25

76

Acoustic wave device using plate modes with surface-parallel displacement  

Energy Technology Data Exchange (ETDEWEB)

Solid-state acoustic sensors for monitoring conditions at a surface immersed in a liquid and for monitoring concentrations of species in a liquid and for monitoring electrical properties of a liquid are formed by placing interdigital input and output transducers on a piezoelectric substrate and propagating acoustic plate modes therebetween. The deposition or removal of material on or from, respectively, a thin film in contact with the surface, or changes in the mechanical properties of a thin film in contact with the surface, or changes in the electrical characteristics of the solution, create perturbations in the velocity and attenuation of the acoustic plate modes as a function of these properties or changes in them.

1992-01-01

77

A study of crystalline and stress behavior in oxide films prepared by ion assisted deposition  

International Nuclear Information System (INIS)

One of the main problems related to optical thin film materials used in high power laser environments is the catastrophic damage caused to them due to laser irradiation. While the influence of ion bombardment on the optical properties of oxide thin films is now a well understood subject, the morphology and crystalline behaviour of these films under ion incidence is not so well studied. Hence, it is of great importance to investigate the effects of ion bombardment during growth on the microstructure and crystalline behaviour of oxide materials.

1994-10-24

78

Enhancement of Heat and Mass Transfer in Mechanically Contstrained Ultra Thin Films  

Energy Technology Data Exchange (ETDEWEB)

Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be ...

2005-01-01

81

Surface modification of LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-films by zirconium alkoxide/PMMA composites and their effects on electrochemical properties  

Energy Technology Data Exchange (ETDEWEB)

Three kinds of surface modifications were carried out on LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-films to improve the charge and discharge characteristics of LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} positive electrodes. Among them, Zr(OBu){sub 4}/poly(methyl methacrylate) (PMMA)-treated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrodes showed charge and discharge efficiency of 80-84% in the first cycle, which was much higher than that for an untreated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrode (73%). The values of the charge and discharge efficiency were still higher than that for an untreated electrode after the 30th cycle. The charge and discharge curves gave two plateaus at around 4.72 and 4.76 V, which were very similar to those for the untreated electrode. Ac impedance spectroscopy revealed that the surface film resistance should not increase by Zr(OBu){sub 4}/PMMA treatment. XPS measurements suggest that a ...

2008-10-15

82

Production and characterisation of the transition metal chalcogenides MoS[sub 2], MoSe[sub 2], WS[sub 2] and WSe[sub 2] as thin films in photovoltaics. Herstellung und Charakterisierung der Uebergangsmetallchalkogenide MoS[sub 2], MoSe[sub 2], WS[sub 2] und WSe[sub 2] als Duennfilme fuer die Photovoltaik  

Energy Technology Data Exchange (ETDEWEB)

The production and characterisation of thin films made from molybdenum sulphide, molybdenum selenide, tungsten sulphide and tungsten selenide are described. The electronic properties of the thin films were examined by Hall measurements and by thermal sensors. For the MoSe[sub 2] films, the majority of the samples were n-conducting and p-conduction was only found for a few examples. All the other films (MoS[sub 2], WS[sub 2], WSe[sub 2]) were p-conducting. The electrical transport properties of the thin films are comparable to those of single crystals. With these thin films as absorber materials, it was possible for the first time to produce the polycrystalline solid n-ZnO/p-MoSe[sub 2], n-ZnO/WSe[sub 2], n-ZnO/WS[sub 2]- and n-ITO/WS[sub 2] solar cells. In spite of not yet optimized diode geometry (lateral build-up), a ...

1993-01-01

83

Low k thin films based on rf plasma-polymerized aniline  

International Nuclear Information System (INIS)

Thermally stable materials with low dielectric constant (k<3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant ...

2004-06-01

84

Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs  

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The ...

1999-02-23

85

Investigation by XRF and XRD of Zn and Fe in Fe{sub x} Zn{sub 1-x} thin films  

Energy Technology Data Exchange (ETDEWEB)

Fe{sub x}Zn{sub 1-x} alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K{beta}/K{alpha} x-ray intensity ratios of Zn and Fe in Fe{sub x}Zn{sub 1-x} thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi {sup 241}Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in Fe{sub x}Zn{sub 1-x} ...

2008-12-15

86

Investigation by XRF and XRD of Zn and Fe in Fex Zn1-x thin films  

International Nuclear Information System (INIS)

FexZn1-x alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K?/K? x-ray intensity ratios of Zn and Fe in FexZn1-x thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi 241Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in FexZn1-x thin films for different ...

2008-12-01

87

Enhancement of long-term stability of pentacene thin-film transistors encapsulated with transparent SnO{sub 2}  

Energy Technology Data Exchange (ETDEWEB)

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO{sub 2} thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm{sup 2}/(V s) that was initially 0.62 cm{sup 2}/(V s), when a buffer layer of thermally evaporated 100 nm SnO{sub 2} film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm{sup 2}/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 10{sup 5} to that of the unprotected devices ({approx}10{sup 4}) which was reduced from {approx}10{sup 6} before aging. Therefore, the enhanced ...

2005-12-15

88

Corrosion of aluminum and copper thin films under simulated atmospheric conditions in laboratory tests  

Energy Technology Data Exchange (ETDEWEB)

Corrosion characteristics of Al and Cu thin films have been studied in cyclic fog tests using tap water fog and fog created with 0.1% NaCl solution in tap water. Likewise, their corrosion features have been analyzed in continuous immersion testing in the laboratory in distilled water, tap water, in 0.1% NaCl and 3.5% NaCl solutions in distilled water. The corrosion potentials and the corrosion currents of these thin films change and reach steady state values after some time. However, steady state is not realized in 3.5% NaCl solutions. The corrosion current density data have been used to calculate lifetime of 1 {mu}m thick thin films of Al and Cu in the various tests, and assuming that the fog test data would hold under normal exposure conditions, life spans for these thin film sensor elements in actual exterior exposure ...

1998-12-31

89

Creating bulk nanocrystalline metal.  

Energy Technology Data Exchange (ETDEWEB)

Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give ...

2008-10-01

90

Study of structural and optical properties of sprayed WO{sub 3} thin films using enhanced characterization techniques along with the Boubaker Polynomials Expansion Scheme (BPES)  

Energy Technology Data Exchange (ETDEWEB)

In this study, WO{sub 3} thin films were grown on glass substrates using an aqueous solution containing tungstate (NH{sub 4}){sub 2}WO{sub 4} as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at T{sub s} = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T({lambda}) and ...

2009-11-13

91

Study of structural and optical properties of sprayed WO3 thin films using enhanced characterization techniques along with the Boubaker Polynomials Expansion Scheme (BPES)  

International Nuclear Information System (INIS)

In this study, WO3 thin films were grown on glass substrates using an aqueous solution containing tungstate (NH4)2WO4 as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at Ts = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T(?) and reflectance R(?) spectra in 300-1800 ...

2009-11-13

92

Stable p-channel polysilicon thin film transistors fabricated by laser doping technique  

Energy Technology Data Exchange (ETDEWEB)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate ...

2005-09-01

93

Stable p-channel polysilicon thin film transistors fabricated by laser doping technique  

International Nuclear Information System (INIS)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped ...

2005-09-01

94

Sodium to sodium carbonate conversion process  

Energy Technology Data Exchange (ETDEWEB)

A method is described for converting radioactive alkali metal into a low level disposable solid waste material. The radioactive alkali metal is atomized and introduced into an aqueous caustic solution having caustic present in the range of from about 20 wt % to about 70 wt % to convert the radioactive alkali metal to a radioactive alkali metal hydroxide. The aqueous caustic containing radioactive alkali metal hydroxide and CO{sub 2} are introduced into a thin film evaporator with the CO{sub 2} present in an amount greater than required to convert the alkali metal hydroxide to a radioactive alkali metal carbonate, and thereafter the radioactive alkali metal carbonate is separated from the thin film evaporator as a dry powder. Hydroxide solutions containing toxic metal hydroxide including one or more metal ions of Sb, As, Ba, Be, Cd, Cr, Pb, Hg, Ni, Se, Ag and Tl can be converted into a low level ...

1997-10-14

95

Recycling boosts profits and saves resources  

Energy Technology Data Exchange (ETDEWEB)

The Raywell Process Plants unit, which reclaims a wide range of organic solvents, including chlorinated hydrocarbons, is based on thin film evaporation and distillation rather than steam distillation, thus reducing the risk of contamination by water. Henry Balfour and Co.'s Pfaudler Solvent Recovery System gives 96% or better solvent recovery and produces a near-solid waste suitable for landfill disposal; like the Raywell system, it uses a mechanically wiped thin-film evaporator. Midland Oil Refineries uses sa Raywell thin-film evaporator for recovery of waste lubricating oils rather than the conventional sulfuric acid/clay treatment, thus avoiding formation of sulfuric acid sludge waste. The Henry Balfour Bioenergy anaerobic digestion system gives yields of fuel gas with 65-75% methane as high as 0.8 cu m/kg BOD; it achieves 95-98% BOD removal with no pH control or nutrient addition because it ...

1980-05-01

96

Radiative performance of rare earth garnet thin film selective emitters  

Energy Technology Data Exchange (ETDEWEB)

In this paper the authors present the first emitter efficiency results for the thin film 40 percent Er-1.5 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) and 25 percent Ho YAG selective emitter at 1500 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns). Emitter efficiency and power density are significantly improved with the addition of multiple rare earth dopants. Predicted efficiency results are presented for an optimized (equal power density in the Er, (4)I[sub 15/2]-(4)I[sub 13/2] at 1.5 microns, and Ho, (5)I[sub 7]-(5)I[sub 8] at 2.0 micron emission bands) Er-Ho YAG thin film selective emitter.

1994-08-01

97

Preparation and photocatalytic property of pyrochlore Bi{sub 2}Ti{sub 2}O{sub 7} and (Bi, La) {sub 2}Ti{sub 2}O{sub 7} films  

Energy Technology Data Exchange (ETDEWEB)

Dopant-free Bi{sub 2}Ti{sub 2}O{sub 7} thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV-Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La{sup 3+} ions can act as a stabilizer of Aurivillus phase BLT and a grain-growth inhibitor in BLT thin films.

2008-11-28

98

Preparation and characterization of lithium-ion-conductive Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films by the solution deposition  

Energy Technology Data Exchange (ETDEWEB)

Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films were successfully prepared by the solution deposition using lithium acetate, aluminum nitrate, ammonium dihydrogen phosphate and titanium butoxide as starting materials. The structure, surface morphology, electrochemical window, and ionic conductivity of the films were studied by X-ray diffraction, scanning electron microscopy, cyclic voltammetry and AC impedance. The results showed that Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films annealed between 750 deg. C and 900 deg. C prepared by this method were well crystallized, homogenous and crack-free. The electrochemical window was beyond 2.4 V and the ionic conductivity was approximately 1.57x10{sup -5} S/cm at room temperature for the film annealed at 800 deg. C for 30 min.

2003-02-03

99

Preparation and characterization of lithium-ion-conductive Li_1_._3Al_0_._3Ti_1_._7(PO_4)_3 thin films by the solution deposition  

International Nuclear Information System (INIS)

Li_1_._3Al_0_._3Ti_1_._7(PO_4)_3 thin films were successfully prepared by the solution deposition using lithium acetate, aluminum nitrate, ammonium dihydrogen phosphate and titanium butoxide as starting materials. The structure, surface morphology, electrochemical window, and ionic conductivity of the films were studied by X-ray diffraction, scanning electron microscopy, cyclic voltammetry and AC impedance. The results showed that Li_1_._3Al_0_._3Ti_1_._7(PO_4)_3 thin films annealed between 750 deg. C and 900 deg. C prepared by this method were well crystallized, homogenous and crack-free. The electrochemical window was beyond 2.4 V and the ionic conductivity was approximately 1.57x10"-"5 S/cm at room temperature for the film annealed at 800 deg. C for 30 min.

2003-02-03

100

Powdering characteristics of thin film evaporator, 1. Drying and powdering of solution  

Energy Technology Data Exchange (ETDEWEB)

Vertical thin film evaporators have been used to concentrate and dry solutions because their rotating swing blades prevent scale from being deposited on the heated surfaces. Powdering capacity of the vertical thin film evaporator was examined experimentally for drying applications of radioactive liquid waste generated from nuclear power plants. As a result, it was found that the powdering capacity increased with the blade rotation, changing significantly in the low ratational region and scarcely in the high rotational region. The powdering capacity in the high rotational region was restricted by the lack of heat flux which was theoretically evaluated for the concentrating process. As the critical factor in the low rotational region was not clear, a visual test apparatus was made to observe flow patterns in the evaporator, and a powdering model was obtained. This model showed that powdering process was ...

1983-01-01

101

Powdering characteristics of thin film evaporator, 1  

International Nuclear Information System (INIS)

Vertical thin film evaporators have been used to concentrate and dry solutions because their rotating swing blades prevent scale from being deposited on the heated surfaces. Powdering capacity of the vertical thin film evaporator was examined experimentally for drying applications of radioactive liquid waste generated from nuclear power plants. As a result, it was found that the powdering capacity increased with the blade rotation, changing significantly in the low ratational region and scarcely in the high rotational region. The powdering capacity in the high rotational region was restricted by the lack of heat flux which was theoretically evaluated for the concentrating process. As the critical factor in the low rotational region was not clear, a visual test apparatus was made to observe flow patterns in the evaporator, and a powdering model was obtained. This model showed that powdering process was ...

1983-01-01

102

Nanostructured p-CuIn3Se5/n-CdS heterojunction engineered using simple wet chemical approach at room temperature for photovoltaic application  

British Library Electronic Table of Contents (United Kingdom)

Herein, we report engineering of nanostructured p-CuIn3Se5/n-CdS heterojunction thin film on a glass substrate, which is prepared at room temperature using simple wet chemical approach involving ion exchange reactions between CdS and Cu^+, In^3^+ and Se^2^- ions in alkaline medium. The uniform deposition of heterojunction thin films is achieved by optimizing the pH, temperature and molarity of the reactant bath. The as-deposited thin-films were annealed at 200^oC in air for 1h and further characterized for structural, optical and electrical properties using UV-Vis spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Hall effect for type of conductivity, and I-V measurement to investigate the char...

2011-01-01

103

Lessons Learned from the Photovoltaic Manufacturing Technology/PV Manufacturing R&D and Thin Film PV Partnership Projects  

Energy Technology Data Exchange (ETDEWEB)

As the U.S. Department of Energy's (DOE's) Solar Energy Technologies Program initiates new cost-shared solar energy R&D under the Solar America Initiative (SAI), it is useful to analyze the experience gained from cost-shared R&D projects that have been funded through the program to date. This report summarizes lessons learned from two DOE-sponsored photovoltaic (PV) projects: the Photovoltaic Manufacturing Technology/PV Manufacturing R&D (PVMaT/PVMR&D) project and the Thin-Film PV Partnership project. During the past 10-15 years, these two projects have invested roughly $330 million of government resources in cost-shared R&D and leveraged another $190 million in private-sector PV R&D investments. Following a description of key findings and brief descriptions of the PVMaT/PVMR&D and Thin-Film PV Partnership projects, this report presents lessons learned from the projects.

2006-09-01

104

Growth and characterisation of electrodeposited ZnO thin films  

Energy Technology Data Exchange (ETDEWEB)

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit ...

2008-04-30

105

Effects of DC gate and drain bias stresses on the degradation of excimer laser crystallized polysilicon thin film transistors  

Energy Technology Data Exchange (ETDEWEB)

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress ...

2005-01-01

106

Effects of DC gate and drain bias stresses on the degradation of excimer laser crystallized polysilicon thin film transistors  

International Nuclear Information System (INIS)

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to ...

2005-01-01

109

Minimally Invasive Endoscopic Pituitary Surgery  

Medline Plus

... There has been a role for placement of yttrium or radioactive phosphorous in a tumor called craniopharyngioma, ...

110

Hydrocarbon cracking catalysts and processes for utilizing the same  

Energy Technology Data Exchange (ETDEWEB)

This patent describes a catalyst comprising: (a) a non-zeolitic inorganic oxide matrix, and (b) an ultrastable Y-type crystalline zeolite, the ziolite having been pretreated by contacting the zeolite with a phosphorus compound selected from the group consisting of phosphoric acid, phosphorous acid, a salt of phosphoric acid, a salt of phosphorous acid, and mixtures thereof for a time sufficient to composite an effective amount of phosphorus with the zeolite.

1989-06-13

111

,>22u  

Science.gov (United States)

(Watkins and. Corbett,. 1964) which is a phosphorous-vacancy complex, i.e., ...... Grover. 1965. Semiconductor. Surfaces. ...

112

Characterisation of thin films on rough steel substrates by FTIR microscopy and imaging  

International Nuclear Information System (INIS)

Complete text of publication follows. According to the new European regulations (Restrictions of Hazardous Substance Directive), there is an emerging demand for environmental friendly metal treatments instead on formerly used chromate conversion coating technique. The aim of the present investigations was to characterise and compare silicon containing protective thin layers on roughened galvanized steel surfaces (with average roughness of 0.7 microns), using FTIR microscopy and imaging techniques. The silicon containing coatings were produced either by Chemical Vapour Deposition (CVD) or by wet chemical treatment using liquid silane. FTIR techniques offer new possibilities in the characterisations and chemical mapping of differently coated thin films, besides SEM+EDS, AFM, nanoindentation, XPS measurements (P. Nemeth et al., Materials Science Forum, 589 (2008) 433-438). All measurements were carried out by a Varian FTS-7000 spectrometer with a ...

113

Ultrafast nonlinear optical response of Ag nanoparticles embedded in mesoporous thin films  

British Library Electronic Table of Contents (United Kingdom)

Highly dispersed silver nanoparticles embedded in mesoporous thin films (MTFs) have been synthesized by modification of the interior surface of mesoporous silica with ethylenediamine moieties, which provided the coordination sites for the Ag ions, and subsequent reduction under hydrogen atmosphere. TEM observations show the mesoporous parent films have effectively controlled the growth of the synthesized silver nanoparticles. The composite films had an ultrafast nonlinear response time, as fast as 200 fs, and a third-order nonlinear optical susceptibility of 0.94??10?10 esu, which was enhanced by the local field enhancement effect that was present when the silver nanoparticles were embedded in the surrounding dielectric matrix. The origin of the ultrafast nonlinear response and the enhanc...

2009-01-01

114

Thin-film UV detectors based on hydrogenated amorphous silicon and its alloys  

Energy Technology Data Exchange (ETDEWEB)

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

2001-05-16

115

Thin film GaAs solar cells on glass substrates by epitaxial liftoff  

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

1997-02-01

116

Study on polyamide thin-film composite nanofiltration membrane by interfacial polymerization of polyvinylamine (PVAm) and isophthaloyl chloride (IPC)  

British Library Electronic Table of Contents (United Kingdom)

A novel thin-film composite polyamide nanofiltration membrane was prepared through interfacial polymerization of polymeric polyamine polyvinylamine (PVAm) with isophthaloyl chloride (IPC) on a polysulfone supporting film. The composite membranes were prepared under different conditions and characterized in terms of chemical and morphological structures, surface zeta potential, pure water permeability, and rejection to different solutes including electrolytes and sucrose. The results showed that the membrane performance was significantly affected by the content of amine units of PVAm and the concentrations of PVAm and IPC. The increase of the content of amine units of PVAm and the concentration of IPC resulted in an augment in salt rejection and a decrease in permeability, while the increas...

2011-01-01

117

Simple chemical method for nanoporous network of In2S3 platelets for buffer layer in CIS solar cells  

British Library Electronic Table of Contents (United Kingdom)

Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic b-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84eV for indium sulfide platelets. Ph...

2008-01-01

118

Silicon oxide conductivity of hydrogen ion implanted polysilicon thin film transistors  

Energy Technology Data Exchange (ETDEWEB)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10{sup 17} to 3 x 10{sup 19} cm{sup -3}. (Author).

1996-10-01

119

Silicon oxide conductivity of hydrogen ion implanted polysilicon thin film transistors  

International Nuclear Information System (INIS)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10"1"7 to 3 x 10"1"9 cm"-"3. (Author).

120

Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides  

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

121

Positron annihilation study on thin-film composite pervaporation membranes: Correlation between polyamide fine structure and different interfacial polymerization conditions  

British Library Electronic Table of Contents (United Kingdom)

To investigate the variation in the fine structure of polyamide thin-film composite (TFC) membranes prepared via two different interfacial polymerization conditions (IP-I and IP-II), experiments on Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), water contact angle, and positron annihilation spectroscopy (PAS) coupled to a slow positron beam were conducted. Polyamide TFC membranes were prepared via the interfacial polymerization reaction between triethylenetetramine (TETA) and trimesoyl chloride (TMC) on the surface of a modified polyacrylonitrile (mPAN) membrane. Compared with the polyamide TFC membrane prepared via IP-I, the polyamide layer prepared via IP-II showed a shorter S plateau length (thinner thickness), a higher o-Ps intensity I3 value (higher free-volume con...

2010-01-01

122

Optical characterization of In2S3 solar cell buffer layers grown by chemical bath and physical vapor deposition  

British Library Electronic Table of Contents (United Kingdom)

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.

2008-01-01

123

Nuclear power plant liquid waste solidification system. [Japan  

Energy Technology Data Exchange (ETDEWEB)

The fundamental points to be considered in a waste treatment system for a country like Japan, where the final disposal method has not been decided and the wastes have to be stored in the power plants, are volume reduction of the wastes, safe storage of the wastes in the plant, and flexibility regarding the final disposal. A system has been developed that consists of a thin film evaporator for the direct solidification of the liquid waste, a pelletizer for producing hard pellets from the powdered wastes, a pellet storage unit, and a solidification unit for the final disposal. A pilot plant with waste treatment capacity of 200 kg/h was built in 1976 and has proved the system feasibility. This paper reports on pilot plant tests of the thin film evaporator and other components, tests on pellet deterioration during long term storage, and integrity tests on the final disposal of the pellet bitumen package.

1981-01-01

124

Nuclear power plant liquid waste solidification system  

International Nuclear Information System (INIS)

The fundamental points to be considered in a waste treatment system for a country like Japan, where the final disposal method has not been decided and the wastes have to be stored in the power plants, are volume reduction of the wastes, safe storage of the wastes in the plant, and flexibility regarding the final disposal. A system has been developed that consists of a thin film evaporator for the direct solidification of the liquid waste, a pelletizer for producing hard pellets from the powdered wastes, a pellet storage unit, and a solidification unit for the final disposal. A pilot plant with waste treatment capacity of 200 kg/h was built in 1976 and has proved the system feasibility. This paper reports on pilot plant tests of the thin film evaporator and other components, tests on pellet deterioration during long term storage, and integrity tests on the final disposal of the pellet bitumen package.

1981-02-26

125

Modelling the tribology of thin film interfaces  

CERN Document Server

substrate). Within each group of simulations, three lubricant film thicknesses are studied to examine the effect of varying lubricant thickness. Statistical data are collected from each simulation and presented in this work. Via these data, together with the evolution, of atomic and molecular configurations, a very detailed picture of the properties of this thin film interface is presented. In particular, we conclude that perfluoropolyether lubricant forms distinct molecular layers when confined between two substrates, the rate of heat generation under shearing conditions typical of those in a head-disk interface is insufficient for thermal mechanisms to result directly in lubricant degradation, and mechanical stresses attained in the head-disk interface are unlikely to result in any significant degree of lubricant degradation. This thesis examines the tribology of a head-disk interface in an operating hard disk drive via non-equilibrium ...

2000-01-01

126

Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices  

International Nuclear Information System (INIS)

Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce"3"+ sites along with the formation of another type of Ce"3"+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce"3"+ sites with V_S_r shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. copyright 1997 American Institute of Physics.

127

Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode  

British Library Electronic Table of Contents (United Kingdom)

Microcrystalline-Si thin-film transistors (?C-Si TFTs) formed by using the source/drain contact electrode of self-aligned palladium silicide have been investigated. Both the self-aligned palladium silicided scheme and the previous top-gate staggered structure employ two-mask process steps for fabricating ?C-Si TFTs. However, the self-aligned palladium silicided scheme would cause better device characteristics than the top-gate staggered structure, primarily due to more carrier tunneling. For a gate length of 2 ?m, as compared to the top-gate staggered scheme, this silicided scheme can result in a 40% improvement of on-state current. In addition, as the gate length is reduced to 1 ?m, considerable short-channel effect is caused for both the device schemes.

2010-01-01

128

Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films  

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

1998-09-01

129

Length-sorted semiconducting carbon nanotubes for high-mobility thin film transistors  

British Library Electronic Table of Contents (United Kingdom)

We have developed a process for chemical purification of carbon nanotubes for solution-processable thin-film transistors (TFTs) having high mobility. Films of the purified carbon nanotubes fabricated by simple drop coating showed carrier mobilities as high as 164 cm2V?1s?1, normalized transconductances of 0.78 Sm?1, and on/off current ratios of 106. Such high performance requires the preparation of a suspension of micrometer-long and highly purified semiconducting single-walled carbon nanotubes (SWCNTs). Our purification process includes length and electronic-type selective trapping of SWCNTs using recycling gel filtration with a mixture of surfactants. The results provide an important milestone toward printed high-speed and large-area electronics with roll-to-roll and ink-jet device fabri...

2011-01-01

130

Layer-by-layer assembly of thin film oxygen barrier  

Energy Technology Data Exchange (ETDEWEB)

Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.

2008-06-02

131

Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films  

Energy Technology Data Exchange (ETDEWEB)

Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

2000-01-01

132

Influence of mechanical bending and temperature on the threshold voltage instability of a-Si:H thin-film transistors under electrical stress  

British Library Electronic Table of Contents (United Kingdom)

This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77K to 400K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress.

2011-01-01

133

Influence of RF power on the electrical and mechanical properties of nano-structured carbon nitride thin films deposited by RF magnetron sputtering  

International Nuclear Information System (INIS)

Nano structured carbon nitride thin films were deposited at different RF powers in the range of 50 W to 225 W and constant gas ratio of (argon: nitrogen) Ar:N_2 by RF magnetron sputtering. The atomic percentage of Nitrogen: Carbon (N/C) content and impedance of the films increased from 14.36% to 22.31% and 9 x 10"-"1 #OMEGA# to 7 x 10"5 #OMEGA# respectively with increase in RF power. The hardness of the deposited films increased from 3.12 GPa to 13.12 GPa. The increase in sp"3 hybridized C-N sites and decrease of grain size with increase in RF power is responsible for such variation of observed mechanical and electrical properties.

2010-10-01

134

In situ strain measurements during the formation of palladium silicide films  

Energy Technology Data Exchange (ETDEWEB)

The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.

1993-03-01

135

Giant magnetoresistance sensing technologies for detecting small defects in metallic structures  

Science.gov (United States)

Giant magnetoresistance (GMR) has been used with Eddy current testing to detect small defects not only in thin film structures but also in multilayered metallic structures. This work detected small scratches in the thin film under the surface where these defects were unable to be inspected or monitored by regular testing. In addition, rotational GMR magnetic sensor based Eddy current probes were used for detecting buried corner cracks at the edge of holes in metallic structures. The results of this study proved that giant magnetoresistance is very powerful and effective to sense the magnetic field, which is the result from the perturbation of the Eddy currents caused by a defect. This method can be used for quality control of metallization layers on silicon wafer and to detect cracks in thick structures such as cracks in aging aircraft.

2008-01-01

136

Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometry  

Energy Technology Data Exchange (ETDEWEB)

An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.

1985-01-15

137

Fabrication of self-aligned aluminum gate polysilicon thin-film transistors using low-temperature crystallization process  

Energy Technology Data Exchange (ETDEWEB)

The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400degC to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600degC activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 [mu]m. (author).

1994-01-01

138

Fabrication of self-aligned aluminum gate polysilicon thin-film transistors using low-temperature crystallization process  

International Nuclear Information System (INIS)

The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400degC to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600degC activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 #mu#m. (author).

139

Evaporation behavior of water and concentration of technetium and rhenium using thin film evaporator  

International Nuclear Information System (INIS)

The nuclear energy cycle requires the recycling of nuclear fuel, water, chemical reagents, and the volume reduction of radioactive liquid wastes. A fundamental technique for continuous recovery of water using a thin-film evaporator was examined. Appropriate recovery measurements were: an evaporator heat temperature of 323 K, a feed rate of 0.23 cm"3 x s"-"1, a vacuum pressure of 15 mmHg (2 kPa), and impeller rotational speeds of 500#approx#600 rpm (min"-"1). The concentration of trace technetium and rhenium in aqueous solutions was also studied. A decontamination factor of 10"5 for rhenium was obtained. (author)

1999-06-01

140

Electron beam, ion beam, X-ray optical techniques for fabricating surface-acoustic-wave and thin-film optical devices  

International Nuclear Information System (INIS)

Most surface-acoustic-wave and thin-film optical devices are made by the planar fabrication process. The exposure of the pattern in the polymer film is the first and most crucial step in ensuring desired device geometry, dimensional control, and freedom from pattern distortion. The methods of exposing the polymer film include: optical projection, conventional contact printing, conformable photomask contact printing, holographic recording, scanning electron beam lithography, projection electron lithography, and x-ray lithography. In this paper scanning electron beam lithography, conformable photomask contact printing, holographic recording, and x-ray lithography are discussed. In the last section, ion beam etching of relief structures is discussed.

141

Electrical properties of a calix[4]acid/amine Langmuir-Blodgett thin film  

British Library Electronic Table of Contents (United Kingdom)

In this work the DC and AC characteristics for metal-LB film-metal structures deposited by a standard Langmuir-Blodgett film deposition technique are investigated. The conduction mechanism has been studied for a thin film structure in which a calix[4]arene substituted with carboxylic acid groups has been deposited alternately with a calix[4]arene molecule substituted with amine groups. This LB film structure shows a typical insulating behaviour for low voltage values and the Schottky effect becomes dominant when the voltage increases. The conductivity at low voltage values was found to be 1.34x10^-^1^3Scm^-^1. The height of the potential barrier was determined to be 1.65eV for this alternate layer LB film system.

2011-01-01

142

Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation  

Energy Technology Data Exchange (ETDEWEB)

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.

2005-08-01

143

Black hole and baby universe in a thin film of 3He-A  

CERN Document Server

Condensed matter black hole analogues may provide guidance in grappling with difficult questions about the role of short distance physics in the Hawking effect. These questions bear on the very existence of Hawking radiation, the correlations it may or may not carry, the nature of black hole entropy, and the possible loss of information when a black hole evaporates. We describe a model of black hole formation and evaporation and the loss of information to a disconnected universe in a thin film of 3He-A, and we explain why the existence of Hawking radiation has not yet been demonstrated in this model. [We would like this article to be accessible to researchers in both condensed matter and gravitational physics, hence we include more than the usual amount of introductory material.

2002-01-01

144

Bandgap properties of the indium sulfide thin-films grown by co-evaporation  

British Library Electronic Table of Contents (United Kingdom)

In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffraction (XRD) analyses. The optical absorption coefficient ? of this indium sulfide film has been deduced from reflectivity R(?) and transmission T(?) measurements. The fit of the curve representing ?(h?) suggests that the ?-In2S3 has an indirect bandgap of 2.01?eV. Density functional theory (DFT) calculations are performed on this indium sulfide compound, using TB-LMTO code. Through these band structure investigations, an indirect bandgap is predicted as observed experimentally. The top of the valen...

2009-01-01

145

Application of the grazing angle polarized neutron reflectometry to study the magnetism in thin films and stratified media  

Energy Technology Data Exchange (ETDEWEB)

From optical point of view and due to the magnetic interaction of the cold neutrons with the unpaired electron shell, magnetic materials hae a neutron spin-dependent refractive index n[sup +] [spin up] and n[sup -] [spin down]. Magnetic media such as Fe, Co and Ni react like birefringent uniaxial crystals in ordinary optica. n[sup +] and n[sup -] are the equivalent of the ordinary and extraordinary refractive indices. The specular reflection of spin polarized neutrons which is due to the discontinuity of the magnetic induction at the surface of the ferromagnet is a sensitive probe of surface and interface magnetism. We shall first give the background of the art of polarized neutron optics. Secondly, some recent examples from surface and interface magnetism will be given to illustrate the power of this technique such as the magnetic coupling in thin films and multilayers and flux penetration in superconductors. (orig.).

1992-12-01

146

Antireflection coatings with FeSi2 layer: Application to spectrally selective infrared emitter  

British Library Electronic Table of Contents (United Kingdom)

We have developed efficient spectrally selective infrared (IR) emitters that can be utilized for thermophotovoltaic (TPV) power generation by using stainless steel (SUS304) substrates coated with b- FeSi2 thin films. To develop spectrally selective emitters, we theoretically propose antireflection (AR) coatings consisting of a single layer of a dielectric material having a high refractive index (~5) and are appropriate for use with metals such as stainless steels in the IR region. This type of AR coating is fabricated by sputtering a b- FeSi2 thin film on a polished SUS304 substrate. The reflectance in the IR region is successfully reduced to less than 10%. In addition, the AR properties are stable even at 700 K in air. Therefore, metals with AR coatings of b- FeSi2 can be applied to IR em...

2011-01-01

147

Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide  

Energy Technology Data Exchange (ETDEWEB)

In this work, we investigated self-heating related instability in polysilicon thin film transistors (poly-Si TFTs) fabricated on polyimide (PI) substrates. Indeed, when Joule heating becomes relevant, the temperature of the active layer can substantially rise, since the devices are fabricated on thermally insulating substrates. As a result, electrical instability is triggered and attributed to the generation of interface states, due to the Si-H bond breaking, and charge trapping into the gate insulator. In addition, by using 3-dimensional numerical simulations, coupling the thermodynamic and transport models, we analyzed the temperature distribution of the device under operating conditions and found that self-heating is more severe for devices fabricated on plastic substrates.

2009-10-01

148

Analysis of plasma treatment and vapor heat treatment for thin-film transistors by extracting trap densities at front and back interfaces  

International Nuclear Information System (INIS)

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.

2004-05-17

149

A study of different types of current mirrors using polysilicon TFTs  

Energy Technology Data Exchange (ETDEWEB)

Polysilicon thin-film technology has become of great interest due to the demand for large area electronic devices. Active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting displays (AMOLEDs) are among the fields where polysilicon thin-film transistors (poly-Si TFTs) are most commonly used. Such devices, generally, require analog signal processing. This fact makes the performance of basic analog blocks, such as current mirrors implemented with poly-Si TFTs, crucial. This paper examines the performance of various current mirror designs through simulation. Finally, a novel design of a current mirror is proposed aimed to be used in low voltage applications.

2005-01-01

150

Luminescence characteristics of LiCaAlF6:Eu phosphor  

British Library Electronic Table of Contents (United Kingdom)

A simple method for preparing LiCaAlF6:Eu2+ phosphor is reported. Photoluminescence (PL) and thermoluminescence (TL) studies were carried out. The TL sensitivity of the phosphor is nearly twice that of CaSO4:Dy TLD phosphor. Several other properties required for TL dosimetry are superior as well. It is suggested that the phosphor can be a suitable replacement for CaSO4:Dy. (Copyright 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

2007-01-01

151

[Magnetic thin film research]: Progress report year 2  

Energy Technology Data Exchange (ETDEWEB)

The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal alloys: perpendicular ...

1996-09-01

152

The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

1994-06-01

153

Test of superconducting Nb/Al bilayers as particle detectors  

Energy Technology Data Exchange (ETDEWEB)

Superconducting thin film particle detectors can be very attractive due to the low sensitivity to radiation damage. We describe the fabrication procedure and the characterization of Nb/Al bilayers as particle detectors. First steady and dynamical results are reported from tests of 5 MeV alpha-particle detection.

2000-04-07

154

Synthesis of c-axis preferred orientation ZnO:Al transparent conductive thin films using a novel solvent method  

International Nuclear Information System (INIS)

Transparent aluminum doped zinc oxide (ZnO:Al, AZO) conducting thin films with a high-preferential c-axis orientation were synthesized using a new sol-gel formula. The films were deposited using a spin-coating route onto borosilicate glass substrates. We used propylene glycol methyl ether (PGME) as the solvent in place of ethylene glycol monomethyl ether (EGME), which is commonly used because it is easier to deposit onto the substrates. PGME is also superior in terms of health and safety. PGME solvent does not need to settle for several days before use and can be spin-coated as soon as the raw material and solvent are mixed. The effects of this novel solvent on the structural, morphological, electrical and optical properties are discussed using XRD, SEM, a four-point probe and UV-VIS spectrophotometry. It was found that the films produced with PGME showed a high-preferential c-axis orientation and compact microstructure in comparison films ...

2010-09-01

155

Summary and closing remarks  

Energy Technology Data Exchange (ETDEWEB)

A summary of the topics covered in papers presented at the 1995 Brookhaven joint conference on production, neutralization, and application of negative ion beams is given. The conference topics covered included plasma ion sources, plasma seeding of these sources for increased ion production, beam extraction and transport, computer simulation and design studies, and operation of existing and experimental ion source facilities. Application of the sources to accelerator, tokamak, and thin film deposition are discussed. (AIP) {copyright} {ital 1996 American Institute of Physics.}

1996-07-01

156

Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films  

International Nuclear Information System (INIS)

Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 ...

2900-01-01

157

Sputter coating of tantalum and tantalum compounds. (Latest citations from the Metals abstracts alloys index database). Published Search  

Energy Technology Data Exchange (ETDEWEB)

The bibliography contains citations concerning the structural properties of sputtered tantalum and tantalum compounds. The preparation of thin film capacitors and resistors is described. The electrical properties of the sputtered films are also included. The influence of the substrate on the properties of the coatings is considered, including adherence of the coating to the substrate, and the effects of impurities on coating integrity. (Contains 250 citations and includes a subject term index and title list.)

1993-09-01

158

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials  

Science.gov (United States)

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at ...

2008-01-01

159

Slurry explosives  

Energy Technology Data Exchange (ETDEWEB)

In a slurry explosive, the fine droplets of the aqueous phase are dispersed in a continuous oily phase which comprises a thin film surrounding each droplet, the latter being less than one micron in size. The authors present these commercial explosives in three different forms, indicate their explosive properties and discuss their advantages from the safety viewpoint. They also report on tests undertaken with slurry explosives in quarries possessing different types of rock and using deep vertical shotholes.

1984-12-01

160

Radial distribution functions of amorphous silicon  

Energy Technology Data Exchange (ETDEWEB)

Substantial changes in the radial distribution function of amorphous Si films have been observed in neutron-diffraction studies. The spectra indicate changes in short-range order associated with an approx.11% modification in the bond-angle distribution width. The results allow the first direct comparison of structural and vibrational Raman probes of variations in local order in thin-film amorphous solids. Good agreement is obtained between the measured bond-angle variation and that based on Raman estimates.

1989-03-15

161

ONR-NRL Superconducting Materials Symposium: A forecast  

Science.gov (United States)

Partial Contents: Ternary Compounds; Granular Superconductors; Superconductivity in (SN)x and its Halogen Derivative (SNBr0.4)x; Studies of cuCl at Elevated Pressures; Superconducting Properties of Hydride Systems; Thin Film Superconducting Materials Research; Synthesis of Superconducting Nb3Si using High Pressures; Synthesis of Unstable A-15 Compounds by Epitaxial Recrystallization of Ion Implanted Layers; and Sputtering of Nb3Si.

1979-01-01

162

Morphological and thermal properties of {beta}-SnS{sub 2} sprayed thin films using Boubaker polynomials expansion  

Energy Technology Data Exchange (ETDEWEB)

In this work, {beta}-SnS{sub 2} thin films have been prepared on glass substrates by the spray pyrolysis technique using an alcohol solution which contains tin chloride (SnCl{sub 4}) and thiourea (SC(NH{sub 2}){sub 2}) as precursors. The structural study shows that {beta}-SnS{sub 2} thin film prepared using optimal experimental conditions: substrate temperature T{sub s} = 280 deg. C and the concentration ratio of sulfur and tin elements in the spray solution x = [S]/[Sn] = 2.5, crystallizes in the hexagonal phase with a strong (0 0 1) X-ray diffraction line. In the same way, microprobe analyses (EPMA) as well as X-ray photoelectron spectroscopy (XPS) show the presence of undiserable phase of SnO{sub 2}. From the transmission and reflectance spectra, the band gap energy is 2.65 eV. On the other hand, the photothermal properties of such films have been studied, the thermal conductivity was K{sub c} = 0.85 ...

2009-05-27

163

Morphological and thermal properties of ?-SnS2 sprayed thin films using Boubaker polynomials expansion  

International Nuclear Information System (INIS)

In this work, ?-SnS2 thin films have been prepared on glass substrates by the spray pyrolysis technique using an alcohol solution which contains tin chloride (SnCl4) and thiourea (SC(NH2)2) as precursors. The structural study shows that ?-SnS2 thin film prepared using optimal experimental conditions: substrate temperature Ts = 280 deg. C and the concentration ratio of sulfur and tin elements in the spray solution x = [S]/[Sn] = 2.5, crystallizes in the hexagonal phase with a strong (0 0 1) X-ray diffraction line. In the same way, microprobe analyses (EPMA) as well as X-ray photoelectron spectroscopy (XPS) show the presence of undiserable phase of SnO2. From the transmission and reflectance spectra, the band gap energy is 2.65 eV. On the other hand, the photothermal properties of such films have been studied, the thermal conductivity was Kc = 0.85 W m-1 K-1 and the thermal diffusivity was Dc = 14.5 x ...

2009-05-27

164

Laser photochemical etching of molybdenum and tungsten thin films by surface halogenation  

Energy Technology Data Exchange (ETDEWEB)

Laser direct-write etching of the refractory metals Mo and W was developed using reactions in chlorine and nitrogen trifluoride vapors. Rate and high spatial resolution are simultaneously optimized using a two-vapor halogenation/development sequence, based on surface modification. Local-area laser chlorination of the metal surface is used to predispose areas to subsequent bulk etching.

1986-12-01

165

Influence of cobalt doping on the crystalline structure, optical and mechanical properties of ZnO thin films  

International Nuclear Information System (INIS)

Uniform and transparent thin films of Zn_1_-_xCo_xO (0 #=# 0.035, CoO (cubic) was detected as the secondary phase. Influence of Co addition on the volume fraction of grain boundaries has been interpreted. Increase in Co content in the range 0 #<=# x #<=# 0.10 led to quenching of near-band edge and blue emissions, decrease in band gap energy (E_g) from 3.36 eV to 3.26 eV, decrease in film thickness and refractive index and an increase in extinction coefficient of Zn_1_-_xCo_xO thin films. The change in nature of stress from compressive to tensile with lower to higher doping of Co is corroborative with the angular peak shift of (002) plane of ZnO lattice. An overall increase in microhardness of Zn_1_-_xCo_xO thin films up to x = 0.05 is attributed to change in microstructure and evolution of secondary phase and as the secondary phase separates out the ...

2010-07-01

166

Influence of MeV electron irradiation on the properties of by ion implantation hydrogenated polysilicon TFTs  

Energy Technology Data Exchange (ETDEWEB)

The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.

2006-02-15

167

Influence of MeV electron irradiation on the properties of by ion implantation hydrogenated polysilicon TFTs  

International Nuclear Information System (INIS)

The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.

2006-02-01

168

Efficient combining of ion pumps and getter-palladium thin films  

International Nuclear Information System (INIS)

Nonevaporable getters (NEGs) have been extensively studied in the last several years for their sorption properties toward many gases. In particular, an innovative alloy as a thin film by magnetron sputtering was developed and characterized at the European Organization for Nuclear Research. It is composed of Ti-Zr-V and protected by an overlayer of palladium (Pd), according to a technology for which the authors got the licence. NEG-Pd thin films used in combination with ion getter pumps is a simple, easy way to handle pumping devices for ultrahigh and extremely high vacuum applications. To show how to apply this coating technology to the internal surface of different types of ion pumps, the authors carried out several tests on pumps of various shapes, sizes (in terms of nominal pumping speed), and types (diode, noble diode, and triode). Special care was taken during the thermal cycle of baking and ...

2008-07-01

169

Effect of laser induced plasma nitriding on al surface microstructure  

Energy Technology Data Exchange (ETDEWEB)

In this paper, aluminium nitride synthesis is carried out by direct laser irradiation onto an aluminium target surface in a nitrogen containing atmosphere. The influence of various processing parameters on the microstructure of AlN thin films is investigated in order to improve their tribological properties. The main microstructural characteristics: nature, concentration, in depth distribution and morphology of various phases are studied versus processing parameters by TEM and GIXD. (author). 2 refs., 1 fig., 2 photos.

1996-12-31

170

Effect of laser induced plasma nitriding on al surface microstructure  

International Nuclear Information System (INIS)

In this paper, aluminium nitride synthesis is carried out by direct laser irradiation onto an aluminium target surface in a nitrogen containing atmosphere. The influence of various processing parameters on the microstructure of AlN thin films is investigated in order to improve their tribological properties. The main microstructural characteristics: nature, concentration, in depth distribution and morphology of various phases are studied versus processing parameters by TEM and GIXD. (author). 2 refs., 1 fig., 2 photos.

171

Effect of gamma radiation on electrical and optical properties of (TeO_2)_0_._9 (In_2O_3)_0_._1 thin films  

International Nuclear Information System (INIS)

We have studied in detail the gamma radiation induced changes in the electrical properties of the (TeO_2)_0_._9 (In_2O_3)_0 _._1 thin films of different thicknesses, prepared by thermal evaporation in vacuum. The current-voltage characteristics for the as-deposited and exposed thin films were analysed to obtain current versus dose plots at different applied voltages. These plots clearly show that the current increases quite linearly with the radiation dose over a wide range and that the range of doses is higher for the thicker films. Beyond certain dose (a quantity dependent on the film thickness), however, the current has been observed to decrease. In order to understand the dose dependence of the current, we analysed the optical absorption spectra for the as-deposited and exposed thin films to obtain the dose dependences of the optical bandgap and energy width ...

2011-02-01

172

Device performance of APFO-3/PCBM solar cells with controlled morphology  

Energy Technology Data Exchange (ETDEWEB)

A) diffuse bilayer, B) spontaneously formed multilayer, and C) vertically homogenous thin films, are fabricated. The photocurrent/voltage performance is compared and it is found that the self-stratified structure (B) yields the highest energy conversion efficiency. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

2009-11-20

173

Characterization of PdAu thin films on oxidized silicon wafers: interdiffusion and reaction  

International Nuclear Information System (INIS)

Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride films grown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration profiles of these silicides have a maximum at the interface ...

2003-05-31

174

Carbon nitride film deposition by active screen plasma nitriding  

British Library Electronic Table of Contents (United Kingdom)

Deposition of CN-based films by a novel version of active screen plasma nitriding, aiming at surface modification of polymers, is reported. The approach relies on the use of pure graphite as the grid material, which was found to act both as an active screen and as a dry source of carbon atoms for the synthesis of thin films consisting mainly of a stoichiometric CN layer with columnar-type structure and dome-like nanostructured morphology.

2011-01-01

175

Applications of Auger spectroscopy and ESCA to the study of thin films formed on metals  

International Nuclear Information System (INIS)

Various examples of applications of these two techniques are described. A part of them are related to the analysis of adsorbed layers formed during gaz-metal interactions. The others are concerned with the analysis of passive films formed during dry and wet corrosion. Problems related to the calibration of these techniques are discussed.

1979-05-23

176

An interface - marker technique applied to the study of metal silicide growth  

International Nuclear Information System (INIS)

An interface-marker technique has been used to investigate the relative rates of diffusion of Si and of metal atoms during the growth of metal silicide films. The technique enables recognition of a reference plane in thin film diffusion using Rutherford backscattering, while minimizing any perturbation of the diffusion process. Examples are drawn from studies of the growth of silicides of W, Mo, Ta, Nb, Pd and Pt. (orig.).

177

A 3D tomographic EBSD analysis of a CVD diamond thin film  

Energy Technology Data Exchange (ETDEWEB)

We have studied the nucleation and growth processes in a chemical vapor deposition (CVD) diamond film using a tomographic electron backscattering diffraction method (3D EBSD). The approach is based on the combination of a focused ion beam (FIB) unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

2008-09-15

178

In vitro corrosion, cytotoxicity and hemocompatibility of bulk nanocrystalline pure iron  

International Nuclear Information System (INIS)

Bulk nanocrystalline pure iron rods were fabricated by the equal channel angular pressure (ECAP) technique up to eight passes. The microstructure and grain size distribution, natural immersion and electrochemical corrosion in simulated body fluid, cellular responses and hemocompatibility were investigated in this study. The results indicate that nanocrystalline pure iron after severe plastic deformation (SPD) would sustain durable span duration and exhibit much stronger corrosion resistance than that of the microcrystalline pure iron. The interaction of different cell lines reveals that the nanocrystalline pure iron stimulates better proliferation of fibroblast cells and preferable promotion of endothelialization, while inhibits effectively the viability of vascular smooth muscle cells (VSMCs). The burst of red cells and adhesion of the platelets were also substantially suppressed on contact with the ...

2010-12-01

179

Nanocrystalline permanent magnets with enhanced properties  

International Nuclear Information System (INIS)

Parameters of permanent magnets result from the combination of intrinsic properties such as saturation magnetization, magnetic exchange, and magnetocrystalline energy, as well as microstructural parameters such as phase structure, grain size, and orientation. Reduction of grain size into nanocrystalline regime (#approx# 50 nm) leads to the enhanced remanence which derives from ferromagnetic exchange coupling between highly refined grains. In this study the fundamental phenomena, quantities, and structure parameters, which define nanophase permanent magnets are presented and discussed. The theoretical considerations are confronted with experimental data for nanocrystalline Sm-Fe-N type permanent magnets. (author)

2001-09-23

180

Photoelectrochemical Water Splitting for Hydrogen Production Using Multiple Bandgap Combination of Thin-Film-Photovoltaic and Photocatalyst  

Science.gov (United States)

One of the NASA research activities was to identify, characterize, and simulate a series of technologies that could be used for hydrogen production at NASA Kennedy Space Center (KSC) using locally available sources. This project examined the production of hydrogen from solar energy. To produce hydrogen by water splitting, the operating voltage of conventional photovoltaic (PV) cells cannot supply the overvoltage required. Thus, the objective of this project was to research and develop photoelectrochemical (PEC) cells that can supply the required voltage for water splitting by constructing a multiple bandgap tandem PV cell and a photocatalyst that can be activated by infrared (IR) photons transmitted through the PV cell. The proposed concept is different from conventional PEC water splitting by using multiple band gap combinations. The advantages for this PEC cell concept is that the PV cells are not in contact with the electrolyte solution, thus reducing the problems of corrosion and ...

2009-01-01

182

Enhanced Activity of Nanocrystalline Zeolites for Selective Catalytic Reduction of NOx  

Energy Technology Data Exchange (ETDEWEB)

Nanocrystalline zeolites with discrete crystal sizes of less than 100 nm have different properties relative to zeolites with larger crystal sizes. Nanocrystalline zeolites have improved mass transfer properties and very large internal and external surface areas that can be exploited for many different applications. The additional external surface active sites and the improved mass transfer properties of nanocrystalline zeolites offer significant advantages for selective catalytic reduction (SCR) catalysis with ammonia as a reductant in coal-fired power plants relative to current zeolite based SCR catalysts. Nanocrystalline NaY was synthesized with a crystal size of 15-20 nm and was thoroughly characterized using x-ray diffraction, electron paramagnetic resonance spectroscopy, nitrogen adsorption isotherms and Fourier Transform Infrared (FT-IR) spectroscopy. Copper ions were exchanged into ...

2006-12-31

184

Advances in amorphous and nanocrystalline magnetic materials  

International Nuclear Information System (INIS)

Recent advances made in the area of amorphous and nanocrystalline alloys exhibiting high saturation inductions are reviewed. A new chemical composition was identified that achieves a saturation induction of 1.64 T in an iron-based amorphous alloy. This alloy, when used in electrical transformers, shows a much improved performance over the existing amorphous alloy. Nanocrystalline FeCoCuNbSiB alloys are found to have saturation induction levels reaching 1.7 T. These materials are suited for use in sensors and inductors carrying large currents. Some of these nanocrystalline alloys show a BH squareness ratio exceeding 90%, which can be utilized in pulse power devices. Recent developments in the applications of these materials are also pointed out.

2006-09-01

185

Effect of mineral compounds in phosphoric acid polluted by sulfide ions on corrosion of nickel  

Energy Technology Data Exchange (ETDEWEB)

The inhibiting effects of two mineral compounds on corrosion of nickel in phosphoric acid (H[sub 3]PO[sub 4]) polluted by sulfide ions (S[sup 2[minus

1999-06-01

187

Photoluminescence and cathodoluminescence properties of Tb3+ activated Sr3AlO4F emitting-color tunable phosphor  

British Library Electronic Table of Contents (United Kingdom)

Tb3+-activated Sr3AlO4F phosphors were synthesized by a high-temperature solid-state reaction method. The investigation of photoluminescence and cathodoluminescence indicates that these phosphors can be effectively excited by ultraviolet light and low-voltage electron beam. The phosphors exhibit a tunable-green emission. The luminescence behaviors are explained by the site occupancy of Tb3+ ions in the host crystal and the cross-relaxation of 5D3 to 5D4 state.

2011-01-01

188

Photoluminescence and cathodoluminescence properties of Tb3+ activated Sr3AlO4F emitting-color tunable phosphor  

Science.gov (United States)

Tb3+-activated Sr3AlO4F phosphors were synthesized by a high-temperature solid-state reaction method. The investigation of photoluminescence and cathodoluminescence indicates that these phosphors can be effectively excited by ultraviolet light and low-voltage electron beam. The phosphors exhibit a tunable-green emission. The luminescence behaviors are explained by the site occupancy of Tb3+ ions in the host crystal and the cross-relaxation of 5D3 to 5D4 state.

2011-03-01

190

Phosphors for flat panel emissive displays  

Energy Technology Data Exchange (ETDEWEB)

An overview of emissive display technologies is presented. Display types briefly described include: cathode ray tubes (CRTs), field emission displays (FEDs), electroluminescent displays (ELDs), and plasma display panels (PDPs). The critical role of phosphors in further development of the latter three flat panel emissive display technologies is outlined. The need for stable, efficient red, green, and blue phosphors for RGB fall color displays is emphasized.

1995-07-01

191

Nanocrystalline materials: Interfaces and mesoscopic correlations studied by neutron scattering  

International Nuclear Information System (INIS)

Nanocrystalline materials can exhibit properties which are considerably different from their coarse-grained counterparts, making them unique for basic or applied research and also very promising for potential applications. The topics which are addressed in the present paper are magnetic properties and magnetic correlations on the nanometer scale, mechanical properties, in particular the influence of grain boundaries on the elastic and plastic behaviour, and vibration models of grain boundary atoms in nanostructured materials. (author)

2001-09-23

192

Development of Bulk Nanocrystalline Cemented Tungsten Carbide for Industrial Applicaitons  

Energy Technology Data Exchange (ETDEWEB)

This report contains detailed information of the research program entitled "Development of Bulk Nanocrystalline Cemented Tungsten Carbide Materials for Industrial Applications". The report include the processes that were developed for producing nanosized WC/Co composite powders, and an ultrahigh pressure rapid hot consolidation process for sintering of nanosized powders. The mechanical properties of consolidated materials using the nanosized powders are also reported.

2009-03-10

193

Biomimetic helical rosette nanotubes and nanocrystalline hydroxyapatite coatings on titanium for improving orthopedic implants  

Science.gov (United States)

Natural bone consists of hard nanostructured hydroxyapatite (HA) in a nanostructured protein-based soft hydrogel template (ie, mostly collagen). For this reason, nanostructured HA has been an intriguing coating material on traditionally used titanium for improving orthopedic applications. In addition, helical rosette nanotubes (HRNs), newly developed materials which form through the self-assembly process of DNA base pair building blocks in body solutions, are soft nanotubes with a helical architecture that mimics natural collagen. Thus, the objective of this in vitro study was for the first time to combine the promising attributes of HRNs and nanocrystalline HA on titanium and assess osteoblast (bone-forming cell) functions. Different sizes of nanocrystalline HA were synthesized in this study through a wet chemical precipitation process following either hydrothermal treatment or sintering. Transmission electron microscopy images showed that ...

2008-01-01

194

Process for recovering uranium from wet-process phosphoric acid using alkyl pyrophosphoric acid extractants  

Science.gov (United States)

A process is described for the recovery of uranium values from phosphoric acid utilizing an alkyl pyrophosphoric acid (Appa) primary extractant. After extracting the uranium from the phosphoric acid, the appa extractant is deactivated by heating and the uranium values stripped into a phosphoric acid strip solution containing ferric ion as a salting agent. The uranium values may then be re-extracted directly from this stripping solution without adjustment of its concentration into a dialkyl phosphoric acid trialkyl phosphine oxide synergistic extractant from which a relatively pure yellow cake is precipitated. A new procedure for preparing the requisite appa primary extractants is also disclosed.

1981-10-06

195

XPS study on the correlation between chemical state and oxygen-sensing properties of an iron oxide thin film  

International Nuclear Information System (INIS)

We have studied the correlation between the chemical state and the oxygen-sensing properties of an iron oxide thin film using a setup that allows simultaneous sensor resistance measurements and X-ray photoelectron spectroscopy (XPS) data acquisition. The gas exposures were performed at the highest operating pressure of the XPS spectrometer at a controlled sample temperature which allows direct comparison between the sensor response and the chemical state of the surface. The iron oxide film was modified by a sequence of argon ion sputtering steps and the induced changes in the chemical state, resistance, and sensitivity to oxygen were investigated. The sputtering was found to reduce the iron from the Fe"3"+ to the Fe"2"+ state and to decrease the sensor resistance. The measured sensitivity to oxygen first increased by a factor of two but then collapsed to its original level. The mechanism for oxygen sensing was found to be filling of the oxygen ...

2007-10-15

196

X-ray and UV-light irradiation effects on oxide superconducting thin films  

International Nuclear Information System (INIS)

Oxide superconducting thin films were irradiated with X-rays and ultra-violet (UV) light, and induced radiation effects on electrical and chemical properties were examined by transport measurement, X-ray diffraction analysis (XRD), diamagnetization measurement and X-ray photoemission spectroscopy (XPS). After irradiation for ErBa_2Cu_3O_x films with X-rays emitted from a Rh tube for 100 hours, superconductivity was remarkably damaged, destroying the zero-resistance state. The UV-light irradiation for Bi_2Sr_2CaCu_2O_x films was performed in He gas of about 500 Pa with a low pressure mercury lamp. The superconductivity was gradually degraded with the UV irradiation time up to 70 minutes. In both cases, adequate oxygen-annealing treatments restored superconductivity. The X-ray photoemission spectra showed that the mean Cu valence of the films was decreased approximately from +2 to +1 by the irradiation. From these results we can find that ...

197

The optical and structural properties of polycrystalline Cu(In,Ga)(Se,S)2 absorber thin films  

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

2011-01-01

198

Technology application for processing highly viscous liquid in polymer plants  

Energy Technology Data Exchange (ETDEWEB)

This paper introduces recent instances of polymerizers for highly viscous liquid needed in the field of synthetic resin and synthetic fiber. A horizontal twin-shaft type polymerizer has two horizontally rotating shafts with stirring blades of spectacle-shaped type, which are arranged at a 90 [degree] phase difference. As they rotate, they scrape highly viscous liquid sticking to the surface inside the polymerizer and on the rotating shafts. This polymerizer is capable of processing highly viscous liquid up to about 2000 Pa[center dot]s. A lattice-type twisting blade polymerizer is a vertical-type reactor and features a special stirring blade capable of stirring highly viscous liquid up to 5000 Pa[center dot]s This polymerizer has no central rotating shaft so that highly viscous liquid does not stick on it. A sloped blade-type thin-film evaporator has spiral blades in the longitudinal direction of the rotor. Process liquid pushed to the inner wall of the vessel by ...

1993-01-01

199

Solidification of radioactive waste effluents  

Energy Technology Data Exchange (ETDEWEB)

A process and apparatus for solidifying radioactive waste liquid containing dissolved and/or suspended solids is disclosed. The process includes chemically treating for pH adjustement and precipitation of solids, concentrating solids with a thin-film evaporator to provide liquid concentrate containing about 50% solids, and drying the concentrate with heated mixing apparatus. The heated mixing apparatus includes a heated wall and working means for shearing dried concentrate from internal surfaces and subdividing dry concentrate into dry, powdery particles. The working means includes a rotor and helical means for positively advancing the concentrate and resulting dry particles from inlet to outlet of the mixing apparatus. The dry particles may also be encapsulated in a matrix material. Entrained particles in the vapor stream from the evaporator and mixer are removed in an integral particle separator and the vapor is subsequently condensed and may be recycled upstream ...

1983-10-11

200

SnO{sub 2} thin films morphological and optical properties in terms of the Boubaker Polynomials Expansion Scheme BPES-related Opto-Thermal Expansivity {psi}{sub AB}  

Energy Technology Data Exchange (ETDEWEB)

In this study, SnO{sub 2} thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (T{sub s} = 440 {sup o}C). The precursors were methanol CH{sub 4}O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity {psi}{sub AB}. The obtained value: {psi}{sub AB} {approx} 23.4 m{sup 3} s{sup -1} helped situating the performance of the as-grown SnO{sub 2} compound among most known PV-T oxides like ZnO and TiO{sub 2}.

2010-02-04

201

SnO2 thin films morphological and optical properties in terms of the Boubaker Polynomials Expansion Scheme BPES-related Opto-Thermal Expansivity ?AB  

International Nuclear Information System (INIS)

In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.

2010-02-04

202

Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO_2 on SiO_2/Si  

International Nuclear Information System (INIS)

Highly conductive biaxially textured RuO_2 thin films were deposited on technically important SiO_2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO_2 on SiO_2/Si. The biaxially oriented RuO_2 had a room-temperature resistivity of 37 #mu##OMEGA#-cm and residual resistivity ratio above 2. We then deposited Ba_0_._5Sr_0_._5TiO_3 thin films on RuO_2/IBAD-YSZ/SiO_2/Si. The Ba_0_._5Sr_0_._5TiO_3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society.

1998-09-01

203

Properties of ZnO thin films prepared by radio-frequency plasma beam assisted laser ablation  

International Nuclear Information System (INIS)

Zinc oxide thin films were obtained by laser ablation of a Zn target in oxygen reactive atmosphere, the oxygen being supplied either by a standard gas inlet valve or from a radio-frequency (rf) oxygen plasma. Pt-coated silicon and MgO were used as substrates. The influence of the deposition parameters as laser wavelength (266, 355, 1064 nm), laser fluence (1.5-20 J/cm2) and oxygen pressure (1-60 Pa) was studied. The influence of the rf plasma beam addition on the morphological proprieties of zinc oxide films was particularly investigated, simultaneously with several configurations of the direction of the ablation plasma, the rf plasma beam and the substrate. The obtained films, with thicknesses in the range of 50 nm to 1 ?m have been characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM).

2005-07-15

204

Polysilicon thin film transistors fabricated on low temperature plastic substrates  

Energy Technology Data Exchange (ETDEWEB)

We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}

1999-07-01

205

Physico-chemical, optical and electrochemical properties of iron oxide thin films prepared by spray pyrolysis  

International Nuclear Information System (INIS)

Iron oxide thin films were prepared by spray pyrolysis technique onto glass substrates from iron chloride solution. They were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and (UV-vis) spectroscopy. The films deposited at T _s #<=# 450 deg. C were amorphous; while those produced at T _s_u_b = 500 deg. C were polycrystalline #alpha#-Fe_2O_3 with a preferential orientation along the (1 0 4) direction. By observing scanning electron microscopy (SEM), it was seen that iron oxide films were relatively homogeneous uniform and had a good adherence to the glass substrates. The grain size was found (by RX) between 19 and 25 nm. The composition of these films was examined by X-ray photoelectron spectroscopy and electron probe microanalysis (EPMA). These films exhibited also a transmittance value about 80% in the visible and infrared range. The cyclic voltammetry study showed ...

2006-12-15

206

Optical and structural properties of Ge films from ion-assisted deposition  

International Nuclear Information System (INIS)

The optical properties and microstructure of germanium (Ge) films, prepared by ion-assisted deposition (IAD) process, were investigated. The Ge films were deposited on sapphire and silicon substrates, with and without simultaneous Ar+ bombardment. Higher index films, with a refractive index 7.7% larger than that of the single crystalline Ge wafer, were obtained with the IAD process. The density of the IAD film could be 1.5% greater than that of the e-beam film. The results of the heat treatment indicated that the optical and structural properties of the IAD films were more stable. Ge nano-crystallites could be observed under high ion power density, which induced a crystalline structure in the Ge thin films. The average size of the nano-crystallites, as determined from both the X-ray diffraction data and the transmission electron microscopy images, showed that no systematic change had occurred. The results presented in this work suggest that the ...

2008-11-28

207

Optical and mechanical properties of thermally evaporated fluoride thin films  

Energy Technology Data Exchange (ETDEWEB)

As a result of health and safety issues surrounding the use of radioactive materials on coated optical components, there has been renewed interest in coating materials whose optical and mechanical properties approach those offered by their radioactive counterparts. Due to the radioactive nature of ThF{sub 4} and its widespread use in optical coatings, the coating industry is examining other low index and non-radioactive fluorides as possible alternatives. In this paper, the authors present the results of an experimental study on the optical and mechanical properties of thermally evaporated ThF{sub 4}, DyF{sub 3}, CeF{sub 3}, LiF, HfF{sub 4}, IRX, and IRB thin films, where the materials were deposited at different substrate temperatures. The objective is to examine this series of fluorides under comparable deposition conditions and with respect to such material properties as: n and k, film stress, and environmental stability. The optical ...

1998-06-08

208

Operating experience with solidification of radioactive waste by a thin-film evaporator  

Energy Technology Data Exchange (ETDEWEB)

In the nuclear power stations of GDR the rough radioactive waste includes borat-containing evaporator bottoms and spent ion exchanger resins. For its final disposal in deep geological formations (rock salt mines) this waste has to be solidified. The experience of one year lasting operation of a steam heated thin-film evaporator (heating surface 2 m{sup 3}) for evaporator bottoms to be solidified with a solid content of 200-250 g/l are reported on. In short time such amount of water is abstracted from the rough waste that due to the borate content a hot high-viscous product passes from evaporator to waste drum and there solidifies like glass to monolith. The product quality depends on the adjustment of the flow-equilibrium in the evaporator. Boric acid is used as matrix for the radioactive residues. The residual water content of the solidified waste product was about 15-20%, the volume reduction was V{sub f}=5...6. In order to be sure to get a solidified product a ...

1990-01-01

209

Operating experience with solidification of radioactive waste by a thin-film evaporator  

International Nuclear Information System (INIS)

In the nuclear power stations of GDR the rough radioactive waste includes borat-containing evaporator bottoms and spent ion exchanger resins. For its final disposal in deep geological formations (rock salt mines) this waste has to be solidified. The experience of one year lasting operation of a steam heated thin-film evaporator (heating surface 2 m"3) for evaporator bottoms to be solidified with a solid content of 200-250 g/l are reported on. In short time such amount of water is abstracted from the rough waste that due to the borate content a hot high-viscous product passes from evaporator to waste drum and there solidifies like glass to monolith. The product quality depends on the adjustment of the flow-equilibrium in the evaporator. Boric acid is used as matrix for the radioactive residues. The residual water content of the solidified waste product was about 15-20%, the volume reduction was V_f=5...6. In order to be sure to get a solidified product a process ...

1990-06-01

210

Micro and nano patterning by focused ion beam enhanced adhesion  

International Nuclear Information System (INIS)

We report a new method of generating nano and micro patterns using focused ion beam (FIB) induced adhesion. The method utilizes selective irradiation of thin metallic films grown on substrates by focused ion beam followed by peel off. After peel off of the irradiated thin film it is observed that the ion beam scanned portions are retained on the substrate, creating nano and micro patterns. The method is suitable for materials of which the adhesion to the substrate can be improved by ion bombardment. The phenomenon has been demonstrated by creating gold nano patterns of different shapes and sizes ranging from 500 nm to 5 #mu#m on SiO_2-Si substrate using 10-30 keV Ga FIB at beam currents up to 10 pA. The mechanism involved in the process has been discussed. The technique could be utilized to prepare micro and nano patterns of thin films deposited on an appropriate substrate for optical, plasmonic and ...

2009-05-01

211

Looking back on 30 years of experience in the decontamination of radioactive, liquid effluents at KfK. The vapour compression evaporator, for example; 30 Jahre Abwasserdekontamination KfK, Erfahrung mit Bruedenkompressionsverdampfern  

Energy Technology Data Exchange (ETDEWEB)

The first equipment installed at KfK-HDB was a system with a thin-film evaporator. This was later replaced by two vapor compression evaporating units with forced circulation, for evaporation of liquid LAW, and a steam-heated natural circulation evaporator, for evaporation of liquid MAW. Nuclear activities of the Karlsruhe Nuclear Research Center phasing out, the liquid radwaste quantities to be treated have been shrinking accordingly, so that the current system is planned to be replaced by a smaller system with a thin-film evaporator. (orig./HP) [Deutsch] Im Laufe der Jahre wurde die Anlage mit Duennschichtverdampfer durch zwei Bruedenkompressionsverdampfer mit Zwangsumwaelzung fuer die Eindampfung leicht aktiver waessriger Abfaelle und einem dampfbeheizten Naturumlaufverdampfer fuer die Eindampfung mittelaktiver waessriger Abfaelle ersetzt. Mittlerweile sinkt der Abwasseranfall seit Jahren stetig aufgrund der sinkenden Aktivitaeten des ...

1994-05-01

212

Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors  

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in order to ensure that ...

1992-08-28

213

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors  

Energy Technology Data Exchange (ETDEWEB)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO{sub 2} layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate ...

2006-08-15

214

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors  

International Nuclear Information System (INIS)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide ...

2006-08-01

215

Influence of crystallization on the spectral features of nano-sized ferroelectric barium strontium titanate (Ba0.7Sr0.3Tio3) thin films  

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric barium strontium titanate (Ba0.7Sr0.3TiO3)(BST) thin films have been prepared from barium 2-ethylhexanoate [Ba[CH3(CH2)3CH(C2H5)CO2]2], strontium 2-ethylhexanoate [Sr[CH3(CH2)3CH(C2H5)CO2]2] and titanium(IV) isopropoxide [TiOCH(CH3)2]4 precursors using a modified sol-gel technique. The precursor except [TiOCH(CH3)2]4 were synthesized in the laboratory. Transparent and crack-free films were fabricated on pre-cleaned quartz substrates by spin coating. The structural and optical properties of films annealed at different temperatures have been investigated. The as-fired films were found to be amorphous that crystallized to the tetragonal phase after annealing at 550degreeC for 1h in air. The lattice constants "a" and "c" were found to be 3.974A and 3.990A, respectively. The grain...

2008-01-01

216

Inductive technique for measuring critical current densities in thin-film superconductors  

Energy Technology Data Exchange (ETDEWEB)

A technique and a particular apparatus for an inductive measurement of critical currents as a function of temperature and magnetic field in thin-film superconductors are described. The technique has been found to be particularly useful for high-field A-15 compounds 2 to 3 ..mu..m thick. Samples with lower critical current densities would have to be correspondingly thicker to measure over the same broad range of temperature and field. The design of the apparatus is detailed showing that the film can be taken directly from the deposition chamber and mounted without electrical contacts so samples can be changed easily. The principles of operation are developed based on the Critical State Model. These principles are tested by measurements which verify that the measured value of critical curent is independent of the amplitudes and frequency of the small ac magnetic field which is added to a much larger quasistatic field. The inductive measurements are compared with ...

1983-01-01

217

In-plane crystallographic texture of bcc metal films on amorphous substrates  

International Nuclear Information System (INIS)

The authors show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron system differs by a 90 deg C rotation. The origins of in-plane texture in rectangular magnetron sputtering systems are ...

1997-04-04

218

Holistic RBS-PIXE data reanalysis of SBT thin film samples  

Energy Technology Data Exchange (ETDEWEB)

The growth of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films on top of Pt electrode substrates is an important issue for the fabrication of ferroelectric based memories. In a recent publication, SBT thin films grown using seeded and unseeded procedures were studied by PIXE and RBS. Difficulties and misfits found in the comparison of results from both techniques were, at that time, overcome by physical considerations. These, although not rendering interpretation impossible, left out the possibility of understanding the exact nature of the differences between the interface behavior in each case. In the present work it is shown that the reanalysis of the same data using the recently developed RBS-PIXE simultaneous and self-consistent calculation present in NDF leads to stronger conclusions on the solid state reaction occurring during the deposition stage for both types of samples. Allowing for the occurrence of solid state reactions between the ...

2007-08-15

219

High-performance thin-film transistors fabricated using excimer laser processing and grain engineering  

Energy Technology Data Exchange (ETDEWEB)

High-performance polysilicon thin-film transistors (TFT`s) are fabricated using an excimer laser to recrystallize the undoped channel and dope the source-drain regions. Using a technique the authors call grain engineering they are able to control grain microstructure using laser parameters. Resulting polysilicon films are obtained with average grain sizes of {approximately}4--9 {micro}m in sub-100 nm thick polysilicon films without substrate heating during the laser recrystallization process. Using a simple four-mask self-aligned aluminum top-gate structure, they fabricate TFT`s in these films. By combining the grain-engineered channel polysilicon regions with laser-doped source-drain regions, TFT`s are fabricated with electron mobilities up to 260 cm{sup 2}/Vs and on/off current ratios greater than 10{sup 7} To their knowledge, these devices represent the highest performance laser-processed TFT`s reported to date fabricated without substrate heating or ...

1998-04-01

220

High efficiency direct thermal to electric energy conversion from radioisotope decay using selective emitters and spectrally tuned solar cells  

International Nuclear Information System (INIS)

Thermophotovoltaic (TPV) systems are attractive possibilities for direct thermal-to-electric energy conversion, but have typically required the use of black body radiators operating at high temperatures. Recent advances in both the understanding and performance of solid rare-earth oxide selective emitters make possible the use of TPV at temperatures as low as 1200K. Both selective emitter and filter system TPV systems are feasible. However, requirements on the filter system are severe in order to attain high efficiency. A thin-film of a rare-earth oxide is one method for producing an efficient, rugged selective emitter. An efficiency of 0.14 and power density of 9.2 W/KG at 1200K is calculated for a hypothetical thin-film neodymia (Nd2O3) selective emitter TPV system that uses radioisotope decay as the thermal energy source.

1993-08-23

221

Fully transparent thin-film transistor devices based on SnO2 nanowires.  

Science.gov (United States)

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates. PMID:17595151

2007-06-27

222

Friction properties of WS{sub 2}/graphite fluoride thin films grown by pulsed laser deposition  

Energy Technology Data Exchange (ETDEWEB)

Graphite fluoride (CF{sub x}) is investigated as an additive for WS{sub 2} thin films to reduce its sensitivity to moisture. The films are grown onto hardened 440C stainless steel disks by pulsed laser deposition using the 248 nm line from an excimer laser. Substrate temperature and additive concentration are varied to control film chemistry and crystal structure. The effect of relative humidity (i.e., < 1 to 85% RH) on friction is evaluated. Coatings grown at RT from targets with a low concentration of CF{sub x} exhibit ultra-low friction (ULF) behavior in dry air (i.e., {mu} {<=} 0.01), but friction increases with RH. Mechanisms for the ULF behavior are proposed which suggest that further reductions in friction are possible. Films grown at 300 C or with higher concentrations of CF{sub x} are relatively insensitive to humidity, but have more typical friction coefficients ({mu} {<=} 0.04) in dry air. (orig.)

1995-12-01

223

Ellipsometry studies on nitrogenated diamond-like carbon (DLC) thin films produced by RF magnetron sputtering  

International Nuclear Information System (INIS)

Nitrogen doped Diamond-like carbon thin films were deposited on n-Si and SiO_2 substrates by rf magnetron sputtering using pure graphite (99.999%) as the target material and mixtures of Ar, N_2 and H_2 for plasma generation. The dependence of structural and optical properties on nitrogen content was investigated using XPS, Raman spectroscopy, FT-IR spectroscopy, and Ellipsometry studies. It was found that as the nitrogen content was increased in the plasma, sp"2 bonding favored. Also it was observed that oxygen contamination increased with nitrogen content. Typical C-H stretching modes connected with diamond-like carbon could be seen in FT-IR spectra. The I_D and I_G bands were well defined and it was observed that as nitrogen content increased I_G band was enhanced. Ellipsometry studies revealed that the optical constants like refractive index (n) and extinction co-efficient (k) increased with increase in nitrogen content as well as substrate ...

2003-03-01

224

Electric characteristics of organic thin-film transistors and logic circuits with a ferroelectric gate insulator  

Energy Technology Data Exchange (ETDEWEB)

Organic electronic devices using a pentacene have improved importantly in the last several years. We fabricated pentacene organic thin-film transistors (OTFTs) with dielectric SiO{sub 2} and ferroelectric Pb(Zr{sub 0.3},Ti{sub 0.7})O{sub 3} (PZT) gate insulators. The organic devices using SiO{sub 2} and PZT films had the field-effect mobility of approximately 0.1 and 0.004 cm{sup 2}/V s, respectively. The drain current in the transfer curve of pentacene/PZT transistors showed a hysteresis behavior originated in a ferroelectric polarization switching. In order to investigate the polarization effect of PZT gate dielectrics in a logic circuit, the simple voltage inverter using SiO{sub 2} and PZT films was fabricated and measured by an output-input measurement. The gain of inverter at the poling-down state was approximately 7.2 and it was three times larger than the value measured at the poling-up state.

2007-07-16

225

Effects of CdCl2 treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures  

International Nuclear Information System (INIS)

The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl2/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, Eg, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl2/treatment at 400 C for 30 min respectively. A progressive sharpening of the absorption edge upon heat treatment particularly ...

2007-09-01

226

Direct patterning of gold oxide thin films by focused ion-beam irradiation  

International Nuclear Information System (INIS)

For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force ...

2000-09-01

227

Comparison of Si and InSb as the normal layer of S-N-S junctions  

Energy Technology Data Exchange (ETDEWEB)

This paper reports on superconductor-semiconductor-superconductor (S-N-S) weak-link junctions with the normal layer of Si or InSb thin films were prepared by using focused ion beam (FIB), and electrical properties were measured. Whereas InSb thin films on single crystals did not have an intrinsic mobility, S-N-S junction with InSb shows the characteristics of Josephson S-N-S junction. A 200nm-thick film of InSb deposited on MgO had a mobility of 83 cm{sup 2}.V {center dot} s and a carrier density of 6.5 {times} 10{sup 17} cm{sup {minus}3} at 4.2K. The coherence length {xi}{sub n} was computed to be 17 nm from these experimental data, and we obtained critical superconducting current Ic of 100 {mu} A for the S-N-S junction which had a line width of 10{mu} m and a channel length of 20 nm.

1991-03-01

228

Comparative study of phase stability and film morphology in thin-film M/GaAs systems (M = Co, Rh, Ir, Ni, Pd, and Pt)  

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are explained by considering ...

1987-09-01

229

Chemical process equipment for Hitachi. ; Featured equipment  

Energy Technology Data Exchange (ETDEWEB)

The present article describes the specialities in various chemical process equipment fabricated by Hitachi. It introduces the thin-film evaporator which heats, vaporizes and concentrates high viscosity fluid and slurry under thin-film conditions, the centrifugal extractor which uses a high speed rotating rotor to separate two kinds of immiscible liquids effectively in counter current contact conditions under a gravitational force ranging from 2,000G to 4,500G, the process gas boiler and heat pipe equipment which recovers exhausted heat effectively from various plants, the furnace and quench systems which are applied to olefin plants, EDC cracking and steam reforming, and the equipment which has been supplied to chemical plants operated under severe conditions, such as high temperature, high pressure and corrosive atmosphere. It was demonstrated that these technologies and know-hows accumulated from Hitachi's extensive experiences in ...

1993-01-01

230

Characterization and gas-sensing behavior of an iron oxide thin film prepared by atomic layer deposition  

International Nuclear Information System (INIS)

In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. When exposed to O_2 and CO, a typical ...

2008-07-31

231

Blending of nanoscale and microscale in uniform large-area sculptured thin-film architectures  

CERN Document Server

The combination of large thickness ($>3$ $\\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the first time. The nanoscale and the microscale have thus been blended together in sculptured thin films with transverse architectures. SiO$_x$ ($x\\approx 2$) nanowires were grown by electron--beam evaporation onto silicon substrates both with and without photoresist lines (1--D arrays) and checkerboard (2--D arrays) patterns. Atomic self--shadowing due to oblique--angle deposition enables the nanowires to grow continuously, to change direction abruptly, and to maintain constant cross--sectional diameter. The selective growth of nanowire assemblies on the top surfaces of both 1--D and 2--D arrays can be understood and predicted using simple geometrical shadowing equations.

2003-01-01

232

Analysis of semiconductor structures by nuclear and electrical techniques. Final technical report  

Science.gov (United States)

This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at: (1) Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex; (2) Development of marker experiments by ion-implanted Ar or Xe markers; (3) Clarification of the role played by oxygen contamination in silicide formation; (4) Stability of silicide layers; (5) Reaction of metal layers with SiO/sub 2/; (6) Electrical characteristics of Pd/sub 2/Si; and (7) A computer program was written to synthesize backscattering spectra for thin-film samples composed of successive layers of uniform ...

1978-06-01

233

Volume reduction: a short-term answer to the mounting radwaste problem  

International Nuclear Information System (INIS)

Various volume-reduction methods are discussed and their capabilities evaluated. The following volume-reduction methods have the greatest potential at this time: forced-circulation evaporator/crystallizer; incinerator (conventional type); compactor; fluidized-bed calciner/incinerator; fluidized-bed dryer/incinerator; thin-film evaporator; extruder/evaporator; drum mixer; ribbon blender; inert-carrier evaporative process; molten-glass incinerator. The first eight system types listed above have been improved to the point of commercial viability.

1980-01-01

234

Use of real-time Fourier Transform Infrared Reflectivity as an in situ monitor of YBCO film growth and processing  

CERN Document Server

Fourier Transform Infrared (FTIR) spectroscopy has been utilized during high rate E-beam evaporation/deposition of YBa2Cu3O7 (YBCO). The results demonstrate the great utility of FTIR as an in situ monitor of YBCO deposition and processing. We detect different (amorphous/fine polycrystalline) insulating pre-existing phases to the high Tc superconducting phase which appear to have distinct reflectivity fingerprints dominated by thin film interference effects, as a function of temperature and oxygen pressure. These fingerprints reveal some of the kinetic and thermodynamic pathways during the growth of YBCO.

2007-01-01

235

Texture of YBa_2Cu_3O_7_-_x superconductor thick films  

International Nuclear Information System (INIS)

YBa_2Cu_3O_7_-_x thick films have been deposited on silver sheets and MgO single crystals by spray pyrolysis. Film texture is related to film thickness and sintering temperature. The X-ray intensity ratio of the 005 peak to the 110 peak is higher for thin films deposited at the higher temperatures. However, elevated temperatures promote copper diffusion and second-phase formation in films deposited on silver. Films deposited on MgO can have larger grain sizes and are more oriented than those deposited on silver.

1991-05-02

236

Superconducting Properties of Epitaxial Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA) Thin Films and Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA)/PRASEODYMIUM BARIUM(2) COPPER(3) OXYGEN(7-Z)/YTTRIUM BARIUM(2) COPPER(3) OXYGEN(7 - Heterostructures Grown by Pulsed Laser Deposition  

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a ...

1992-01-01

237

State-of-the-art in photovoltaic research and application (except for use in concentrators)  

Energy Technology Data Exchange (ETDEWEB)

A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

1987-01-01

238

Solid state and materials research  

International Nuclear Information System (INIS)

Within about 10 years, microelectronic devices will be made with more than a billion (10"9) electronic components per chip. To implement such a sophisticated technology it will be essential to have a fundamental understanding of the solid state interaction between the different materials in thin film semiconductor structures. This is the main purpose of this research program. Characterization and analysis is carried out mainly by Rutherford backscattering spectrometry and channelling using accelerated nuclear particles from the Van de Graaff accelerator, while radioactive isotopes provide information about interaction mechanisms. 6 figs., 1 ref.

239

Solid State Photovoltaic Research Branch  

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.

1990-09-01

240

Sample method for formation of nanometer scale holes in membranes  

Energy Technology Data Exchange (ETDEWEB)

When nanometer scale holes (diameters of 50 to a few hundred nm) are imaged in a scanning electron microscope (SEM) at pressures in the 10{sup -5} to 10{sup -6} torr range, hydrocarbon deposits built up and result in the closing of holes within minutes of imaging. Additionally, electron beam deposition of material from a gas source allows the closing of holes with films of platinum or TEOS oxide. In an instrument equipped both with a focused ion beam (FIB), and an SEM, holes can be formed and then covered with a thin film to form nanopores with controlled openings, ranging down to only a few nanometers.

2003-02-24

241

S-shaped magnetic macroparticle filter for cathodic arc deposition  

Energy Technology Data Exchange (ETDEWEB)

A new magnetic macroparticle filter design consisting of two 90{sup o} filters forming an S-shape is described. Transport properties of this S-filter are investigated using Langmuir and deposition probes. It is shown that filter efficiency is product of the efficiencies of two 90{sup o} filters and the deposition rate is still acceptably high to perform thin film deposition. Films of amorphous hard carbon have been deposited using a 90{sup o} filter and the S-filter, and macroparticle content of the films are compared.

1996-04-01

242

Progress of the BT-EdF-CEA project. The lithium polymer battery; Avancees du projet BT-EdF-CEA. Batterie lithium polymere  

Energy Technology Data Exchange (ETDEWEB)

The lithium-polymer energy storage technology requires the production of thin films of huge surface. The BT-EdF-CEA consortium has studied the various manufacturing techniques of these films and their assembly. The process was chosen according to its productivity, low expensiveness, ecological impact and energy performances with capacities reaching 40 Ah. This paper explains: the objectives and specifications of the project, the advantage of the consortium and the role of the different partners, the results (coating, dry extrusion and battery element manufacturing techniques), and the electrochemical performances of the elements. (J.S.)

1996-12-31

243

Process and system for treatment of radioactive waste  

Energy Technology Data Exchange (ETDEWEB)

In a treatment system of radioactive waste solution including sodium sulfate generated from a boiling water type nuclear reactor, waste solution is fed into a thin film evaporator where the waste solution is evaporated and made into powder while precipitating in a peripheral surface of the evaporator vessel. The surface of the precipitated solid is wiped by rotating wiper blades and removed off as radioactive solid powder. The rotational speed of a rotor to which the wiper blades are secured is controlled at a minimum and necessary rotational speed which contributes to make the waste solution into the powder so that the rate of worn out of the wiper blade is decreased.

1985-07-02

244

Polysilicon TFT fabrication on plastic substrates  

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

1997-08-06

245

Oxygen evolution studies on perovskite films in alkaline media  

Energy Technology Data Exchange (ETDEWEB)

Thin films of La{sub 0.6}Ca{sub 0.4}CoO{sub 3} perovskite were deposited on nickel plates by thermal decomposition of the metal nitrates. The electrochemical activity of the films for oxygen evolution in KOH solutions (0.1-1 M) was investigated. The reaction order with respect to OH{sup -} ion was found to be around 0.7. The results correlate fairly well with a mechanism in which breaking of the intermediate metal-peroxide bond at the Co ion is the rate-determining step. (author) 4 figs., 4 refs.

1999-08-01

246

Mechanism of iron inhibition by stearic acid Langmuir-Blodgett monolayers  

Energy Technology Data Exchange (ETDEWEB)

Many organic compounds can be adsorbed onto the interface of a metal and solution to form a thin film that inhibits the corrosion process according to a blocking and/or negative catalytic effect. Using the Langmuir-Blodgett (LB) technique, stearic acid (SA) monolayers were deposited onto the surface of an iron (Fe) electrode to study the inhibition effect and the mechanism of SA in a neutral medium. Molecular orientation and the number of deposited monolayers of SA were shown to have marked effects on inhibition of Fe corrosion. The inhibition mechanism depended mainly on blocking.

1995-01-01

247

Low cost, low power, high sensitivity, real time neutron detection microsystem  

International Nuclear Information System (INIS)

A Si array neutron detector is proposed based on commercial CCD and CMOS sensor technology coupled with a thin film neutron conversion coating. System sensitivity is estimated for a baseline device containing a single array and various schemes to increase detection probability by simple area scaling and stacking are discussed. Some possible use scenarios are discussed involving static and moving sources. Likely neutron source fluxes for weapons grade and commercial grade nuclear material are estimated along with expected intensities of cosmic background neutrons which would establish a noise floor to detection limits.

2002-10-10

248

In-situ TEM study of dislocation-twin boundaries interaction in nanotwinned Cu films  

British Library Electronic Table of Contents (United Kingdom)

Epitaxial thin films of nanotwinned face-centered cubic metals such as Cu possess an unprecedented combination of high hardness and high electrical conductivity due to the unique structure of nanometer-spaced coherent twin boundaries. Recent studies of in-situ nanoindentation in a transmission electron microscope have provided new insights on the deformation behavior of nanotwins that are reviewed here. In particular, two unit processes are highlighted: first, stress-induced migration of ?3 {112} incoherent twin boundary that leads to de-twinning of nanotwins; second, twinning dislocation can be multiplied at ?3 {111} coherent twin boundary.

2011-01-01

249

HTSC devices fabricated by selective epitaxial growth  

International Nuclear Information System (INIS)

The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)

1999-04-01

250

Getter pumping  

CERN Document Server

A surface may provide a useful pumping action when able to retain adsorbed gas molecules for the duration of a given experiment. To fulfil this condition at room temperature, strong binding forces, as those resulting from chemical reactions, are required. Materials able to react with gases to form stable chemical compounds are called getters. The two main families of getters (evaporable and non-evaporable, or NEG) are presented and discussed. Special emphasis is placed on the NEG strips currently used for the vacuum systems of particle accelerators, and on the newly developed NEG thin-film coatings, in view of their possible future applications.

2007-01-01

251

Experimental technique to observe weak localization in thin silver films  

CERN Document Server

A simple experiment to observe weak localization in thin Ag films is presented. A clear theoretical signature of weak localization is predicted in mangetoresistive measurements of thin films samples. We present a simple method for making thin Ag film samples, using evaporative deposition, and observing the small magnetoresistive signal, using a resistance bridge technique. Typical results from our students show that Ag films show the predicted behavior for weak localization with spin effects. These effects can be easily observed in a liquid helium dewar.

2005-01-01

252

Electronic properties of thin Ni{sub 2}MnIn Heusler films  

Energy Technology Data Exchange (ETDEWEB)

The half-metallic Heusler alloy Ni{sub 2}MnIn is of high interest for use in spin electronics since at the Ni{sub 2}MnIn/InAs interface a spin polarization of 100% is predicted. We prepare high-quality thin films of 20-60nm thickness by co-evaporation and DC magnetron sputtering. Point-contact Andreev reflection spectroscopy yields a spin polarization of up to 54%. By spectral generalized magneto-optical ellipsometry, the dielectric and magneto-optical properties are determined and ferromagnetic behavior below the Curie temperature T{sub C}=318K is proved.

2005-04-15

253

Development of the alcohol waste processing equipment  

International Nuclear Information System (INIS)

In the experimental fast Reactor JOYO, gripper of Fuel Handling Machine and Ex-Vessel Transfer Machine that the sodium adhered is being washed with alcohol. This radioactive alcohol waste that was used to the washing is stored to the tank. If it is able to separate the alcohol and sodium in the alcohol waste it becomes possible to dispose of the alcohol waste. Japan Nuclear Institute and Fuji Electric Systems CO., LTD. Developed the device that adds carbonic acid gas to the alcohol waste and cause the sodium in the alcohol waste separated as carbonate and remove this carbonate by using the thin film evaporator. (author)

2004-11-01

254

Case studies of hazardous-waste treatment to remove volatile organics. Volume 2  

Energy Technology Data Exchange (ETDEWEB)

Case studies are presented for treatment of refinery wastes in a pilot-scale thin-film evaporator, the removal of volatiles from industrial wastewater for two steam strippers, and the removal of semivolatiles from water by steam stripping followed by liquid-phase carbon adsorption. The report provides data on removal efficiency, air emissions, process residuals, treatment costs, and process limitations. Details on sampling and analytical procedures, quality assurance, and process data are contained in the Appendixes (Volume II).

1987-11-01

255

Case studies of hazardous-waste treatment to remove volatile organics. Volume 1  

Energy Technology Data Exchange (ETDEWEB)

Case studies are presented for treatment of refinery wastes in a pilot-scale thin-film evaporator, the removal of volatiles from industrial wastewater for two steam strippers, and the removal of semivolatiles from water by steam stripping followed by liquid-phase carbon adsorption. The report provides data on removal efficiency, air emissions, process residuals, treatment costs, and process limitations. Details on sampling and analytical procedures, quality assurance, and process data are contained in the Appendixes (Volume II).

1987-11-01

256

CRC handbook of laser science and technology. Volume 5. Optical materials. Part 3. Applications, coatings, and fabrication  

Energy Technology Data Exchange (ETDEWEB)

This book describes the uses, coatings, and fabrication of laser materials. Topics considered include: optical waveguide materials; optical storage materials; holographic recording materials; phase conjunction materials; holographic recording materials; phase conjunction materials; laser crystals; laser glasses; quantum counter materials; thin films and coatings; multilayer dielectric coatings; graded-index surfaces and films; optical materials fabrication; fabrication techniques; fabrication procedures for specific materials.

1987-01-01

257

Asymmetric fingered TFT structure: a new architecture for Kink effect and off-current suppression and improved stability  

International Nuclear Information System (INIS)

The asymmetric fingered structure for polysilicon thin-film transistors (AF-TFTs) is analysed in detail by combining experimental characteristics and two-dimensional numerical simulations. This structure allows an effective reduction of the kink effect and off-current, without introducing any additional series resistance. In addition, a substantial improvement in the device stability is also observed when compared to conventional TFT. The AF-TFT characteristics have been explained by considering a two transistor model.

2006-01-01

258

A truly commercial product  

International Nuclear Information System (INIS)

In one of the first uses of high Tc superconductors in an end-use product, Lake Shore Cryotronics and a Swiss lab have developed a liquid nitrogen level sensor using a high Tc thin film. The probe is manufactured using a seamless stainless steel tube with an yttrium-based zirconium oxide flame-sprayed on the tube. A plasma-sprayed superconductor compound is deposited on top of that. The probe is coated with a sealant that protects the superconducting film from the atmosphere. This manufacturing method has yielded an extremely durable product. Unaffected by ice formation and related mechanical problems, the superconducting level sensor can be kept in the dewar for long periods of time.

259

Thin-film evaporator recovers solvents continuously  

Energy Technology Data Exchange (ETDEWEB)

Reclaimed Energy Company, Inc., Connersville, IN, receives waste generated from a wide variety of industrial applications which include paint, printing and degreasing companies. The wastes are stored in separate tanks and then distilled in batches (pot distillation). The recovered solvents can be returned to the originator. The residue, left after the solvents are distilled, is disposed of using an environmentally safe, economical procedure. The company worked with an engineering and fabrication firm to develop a continuous processing system that employs a mechanically agitated thin-film evaporator to distill the solvents. Successful performance of the evaporator was ensured by processing samples of solvents through the evaporator manufacturer's pilot plant facilities before the full-sized system was designed. Reclaimed Energy Company, Inc., has realized a number of advantages by going from pot distillation to the agitated thin-film ...

1985-11-01

260

Study of ytterbium doping effects on structural, mechanical and opto-thermal properties of sprayed ZnO thin films using the Boubaker Polynomials Expansion Scheme (BPES)  

Energy Technology Data Exchange (ETDEWEB)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(lambda) and ...

2009-10-19

261

Study of ytterbium doping effects on structural, mechanical and opto-thermal properties of sprayed ZnO thin films using the Boubaker Polynomials Expansion Scheme (BPES)  

International Nuclear Information System (INIS)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C3H8O), water (H2O) and zinc acetate (Zn(CH3CO2)2) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(?) and reflectance R(?) spectra. Conjoint optical and thermal ...

2009-10-19

262

Stabilizing lithium plating-stripping reaction between a lithium phosphorus oxynitride glass electrolyte and copper thin film by platinum insertion  

Energy Technology Data Exchange (ETDEWEB)

Lithium (Li) plating-stripping reaction properties at the lithium phosphorus oxynitride glass electrolyte (LiPON)/copper thin film (Cu) interface is improved by the insertion of nano-thickness platinum (Pt) layer at the interface. The LiPON films are formed on mirror-polished lithium-ion conductive solid electrolyte sheets, and current collector thin films of Li, Cu-Pt multi layer, and Cu are formed on the LiPON films. The plating-stripping reactions at the LiPON/current collector films interface are carried out by galvanostatic and potential sweep measurements. Galvanostatic measurements reveal that Pt layer insertion reduces the overvoltage of the reaction and improves its coulomb efficiency. Also, cyclic voltammetry measurement suggests formation of Li-Pt alloys at higher voltages than 0 V (vs. Li/Li{sup +}) during the lithium plating process. Scanning electron microscopy observation clarifies that ...

2011-02-15

263

Micro area analysis and measurement of electronic device material (challenge to utmost limits). Characterization of interface elect`ron structure by photon-and electron-spectroscopies; Denshi debaisu yo zairyo no bisho ryoiki bunseki-keisoku (kyokugen eno chosen). Koshi-denshi bunkoho ni yoru kaimen denshi jotai hyoka  

Energy Technology Data Exchange (ETDEWEB)

A method for detecting electrons emitted as secondary particles by photon incidence to a specimen, as well as a method of using the photons emitted by electron incidence as detecting particles are explained. Pd-Si(100)2{times}1 system is adopted for a case study of using photo-electron spectroscopy where synchrotron emitted light in soft X-ray region is used as the incident light. Pd atoms are deposited little by little on clean Si surface to investigate the electron structure of the surface, and the interface electron structure after bonded formation of Pd(thin film)-Si(substrate) is estimated. Radiation soft X-ray spectroscopy is employed to observe the real state of the bonded interface of Pd(thin film)-Si(substrate) prepared by depositing Pd film in a short period of time. In the case of radiation soft X-ray spectroscopy with electron beam excitation, bonded system of thin ...

1995-07-20

264

Liquid radwaste processing with spiral wound reverse osmosis  

International Nuclear Information System (INIS)

Two different reverse osmosis systems were investigated. The first was a 50-element plant-scale system that is used to treat 2200 m"3 of AECL liquid radwastes annually.It uses thin-film composite (TFC) membranes and operates at an applied pressure of 2760 kPa, with a fixed crossflow of about 40 L/min. The other system uses the same thin-film composite membranes for waste processing but is a two-element pilot-scale system. It is operated at pressures m ranging between 1500 and 7000 kPa, at a fixed crossflow of 55 L/min. The average lifetime of the thin-film composite membranes in the plant-scale processing application at AECL is about 3000 h. After this service life has expired the rejection efficiency declines rapidly from 99.5% to about 95% as the membranes become impaired from chemical cleaning procedures that are required after each 100 m"3 of waste is treated. The permeation flux for the plant-scale system decreases ...

1996-02-25

265

Graded layer design for stress-reduced and strongly adherent superhard amorphous carbon films  

Energy Technology Data Exchange (ETDEWEB)

Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with ...

1999-09-01

266

Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell  

Energy Technology Data Exchange (ETDEWEB)

Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 efficiency of 20.3%. Also, an inverted-grown, ...

1992-12-01

267

Bitumen immobilization of aqueous radwaste by thin-film evaporation  

International Nuclear Information System (INIS)

In the early 1980s, AECL built a Waste Treatment Centre (WTC) for managing low-level solid and aqueous liquid wastes for converting CANDU wastes. At present, two liquid waste streams are being treated at the WTC. The liquid waste streams are volume-reduced by a combination of continuous crossflow microfiltration (MF), spiral wound reverse osmosis (SWRO) and tubular reverse osmosis (TRO) membrane technologies. The concentrate produced from the TRO system and the volume-reduced MF backwash solutions are evaporated while simultaneously adding bitumen in a thin-film evaporator. A water-free product of chemical and radiochemical salts and bitumen is removed in 200-L galvanized steel drums for storage. The radiation field of product drums on contact typically has a value of 0.5 to 3 R/h depending upon the feed concentration of radioactivity to the evaporator. The total solids content in the 200-L drum ranges from 25 to 35%. Encapsulated in the bitumen matrix are a ...

1996-02-25

268

Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for thin substrate polycrystalline solar cells (alloy-base amorphous materials, PIN layers, strains in the interface, and effects of impurities); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usumaku taiyo denchi jitsuyoka no tame no kaiseki hyoka (gokinkei amorphous zairyo pin kakuso kaimen ni okeru yugami fujunbutsu nado no eikyo)  

Energy Technology Data Exchange (ETDEWEB)

Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated amorphous silicon has a 1 ...

1994-12-01

269

The effect of temperature on the grain growth of nanocrystalline metals and its simulation by molecular dynamics method  

British Library Electronic Table of Contents (United Kingdom)

In this study, the thermodynamic stability of the grain boundaries and the grain growth of nanocrystalline Palladium (Pd) at various temperatures were investigated. For this purpose, the Gibbs free energy curves of grain boundaries were plotted in terms of the excess volume by the use of the equation of state (EOS) and Song's thermodynamic models. The results showed that, according to the prediction of these models, the nanocrystalline growth in metals was stopped at the grain sizes less than the critical grain size. Also, the results of the temperature variations and its effect on the Gibbs free energy curves showed that by the increase of the temperature, the possibility for the stoppage of grain growth is facilitated and the critical grain size is increased. To investigate the validity ...

2012-01-01

270

Luminescence properties of europium and terbium activated yttrium niobium/tantalate phosphors under VUV-UV excitation  

International Nuclear Information System (INIS)

Various compositions of Y(Ta,Nb)O4:Eu3+,Tb3+ with different Nb and activator concentrations have been investigated under UV and VUV excitation. Some compounds with very strong emission under VUV excitation were found. Such phosphors could be proposed as very good emissive materials for Displays and Lightings. The growing interest in luminescence spectroscopy of rare earth ions in the vacuum ultraviolet (VUV) and the visible (VIS) spectral range is due to industrial demands for new applications. YTaO4 and YNbO4 phosphors are a perspective class of efficient materials that are generally used in X-ray intensifying screens. These phosphors exhibit satisfying luminescence whenever excited by UV light, cathode radiation or X ray. However, to our knowledge, no work has been published on the VUV-excited luminescence for Eu3+ and Tb3+ double activated yttrium niobate and yttrium tantalate based phosphors. In ...

271

Development of Efficient UV-LED Phosphor Coatings for Energy Saving Solid State Lighting  

Energy Technology Data Exchange (ETDEWEB)

The University of Georgia, in collaboration with GE Global Research, has investigated the relevant quenching mechanism of phosphor coatings used in white light devices based on UV LEDs. The final goal of the project was the design and fabrication of a high-efficacy white light UV-LED device through improved geometry and optimized phosphor coatings. At the end of the research period, which was extended to seamlessly carry over the research to a follow-up program, we have demonstrated a two-fold improvement in the conversion efficiency of a white light LED device, where the increase efficacy is due to both improved phosphor quantum efficiency and lamp geometry. Working prototypes have been displayed at DOE sponsored meetings and during the final presentation at the DOE Headquarters in Washington, DC. During the first phase of the project, a fundamental understanding of quenching processes in UV-LEDs was obtained, and the ...

2006-05-15

272

Development of Efficient UV-LED Phosphor Coatings for Energy Saving Solid State Lighting  

International Nuclear Information System (INIS)

The University of Georgia, in collaboration with GE Global Research, has investigated the relevant quenching mechanism of phosphor coatings used in white light devices based on UV LEDs. The final goal of the project was the design and fabrication of a high-efficacy white light UV-LED device through improved geometry and optimized phosphor coatings. At the end of the research period, which was extended to seamlessly carry over the research to a follow-up program, we have demonstrated a two-fold improvement in the conversion efficiency of a white light LED device, where the increase efficacy is due to both improved phosphor quantum efficiency and lamp geometry. Working prototypes have been displayed at DOE sponsored meetings and during the final presentation at the DOE Headquarters in Washington, DC. During the first phase of the project, a fundamental understanding of quenching processes in UV-LEDs was obtained, and the ...

2006-05-01

273

Optical properties of excitation spectra of (Ca,Y)-#alpha#-SiAlON:Eu yellow phosphors  

International Nuclear Information System (INIS)

Elemental substitution of Ca by Y was investigated for Ca-#alpha#-SiAlON:Eu yellow phosphors, which is useful for the white light-emitting diode lamps of phosphor conversion type. Depending on the ratio of the elemental substitution, not only the red shift of emission in wavelength occurred but also the figure of the excitation spectra changed. Their excitation band widths and flatness were discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2006-09-01

274

Synthesis of nanocrystalline YSZ (ZrO_2-8Y_2O_3) powder by polymerized complex method  

International Nuclear Information System (INIS)

In this study nanocrystalline powders of yttria-stabilized zirconia (ZrO_2-8Y_2O_3) have been synthesized through 'polymerized complex method'. Zirconium chloride, yttrium nitrate, citric acid and ethylene glycol were polymerized at 80 "oC to produce a gel-like mass in which metallic ions were uniformly distributed. During the thermal treatment of dried gel, nanocrystalline powder was formed at 450 "oC and 650 "oC for 2 h. Thermal reactions and crystalline phase formation of the dried gel were investigated through thermal analysis and X-ray diffraction analysis, respectively. The results of thermal analysis and XRD showed the formation of nanocrystalline powder at less than 600 "oC. Chemical bonding of the dried gel was investigated by Fourier transform infrared spectroscopy analysis. Morphology of powder calcined at 650 "oC was analyzed by scanning electron microscope. Yttria-stabilized zirconia powders with the mean ...

2010-02-18

275

Nanocrystalline and policrystalline phases present in the protective metalloceramic coatings  

International Nuclear Information System (INIS)

New data about the structure of high-temperature resistant metalloceramic plasma sprayed coatings in micro and nano areas are presented. Application of the new instrumental methods: transmission electron microscopy combined with selected area electron diffraction mode is possible to obtain these data. The first layer in Ni based metallic bond coat shows nanocrystalline structure. External ceramic layer based on stabilised ZrO_2 is polycrystalline and contains both cubic and tetragonal crystalline phases. Local inhomogeneities in coatings phase composition are determined. (author)

2001-09-23

276

Nanocrystalline #beta#-sialon by reactive sintering of a SiO_2-AlN mixture subjected to high-energy ball milling  

International Nuclear Information System (INIS)

A mixture of powders of silica and aluminum nitride is subjected to high-energy ball milling for different milling times. This material is subsequently compacted by uniaxial pressing and sintered at 1450 deg. C. The resulting pellets are crushed and analysed by X-ray diffraction. For short milling times, the amount of phase transformation is minimal and the resulting material mostly consists of cristobalite and aluminum nitride. For long milling times, nanocrystalline #beta#-SiAl_2O_2N_2 is mainly produced.

2005-04-05

277

Nanocrystalline doped cerium oxide as a catalyst for SO{sub 2} reduction by CO  

Energy Technology Data Exchange (ETDEWEB)

Nanocrystalline processing by inert gas condensation has the inherent advantages of generating: (1) high surface area nanoclusters, (2) non-stoichiometric oxides, and (3) high dispersions of dopants. This approach is exploited in the synthesis of fluorite-structured catalysts for SO{sub 2} reduction by CO. Nanocrystalline CeO{sub 2{minus}x}, La-doped CeO{sub 2{minus}x}, and Cu-doped CeO{sub 2{minus}x} were produced by magnetron sputtering from a pure or mixed metal target, followed by controlled oxidation of the metallic clusters. The as-prepared doped and undoped nanocrystalline CeO{sub 2{minus}x} materials were found to be excellent catalysts for complete SO{sub 2} conversion to elemental sulfur. Undoped nanocrystalline CeO{sub 2{minus}x} enabled light-off at 460 C, a temperature {approximately} 120 C lower than that over polycrystalline CeO{sub 2}, which is a novel effective catalyst itself. The high ...

1994-12-31

278

TSI study of multiactivated SrS phosphors  

International Nuclear Information System (INIS)

Data of thermally stimulated luminescence (TSL) of single (Cu), double (Cu, Mn) and triple (Cu, Mn, Gd) activated SrS phosphors, which throws light on the nature and distribution of deeper traps have been presented. The samples are prepared by Bhawalkar's method and excited by UV 365 nm and #gamma#-rays to study the phenomenon. (author). 8 refs., 2 figs., 1 tab.

279

Sol-gel synthesis of high-quality SrRuO{sub 3} thin film electrodes suppressing the formation of detrimental RuO{sub 2} and the dielectric properties of integrated lead lanthanum zirconate titanate films.  

Science.gov (United States)

A facile solution chemistry is demonstrated to fabricate high-quality polycrystalline strontium ruthenium oxide (SrRuO{sub 3}) thin film electrodes on silicon substrates suppressing the formation of undesired ruthenium oxide (RuO{sub 2}) for the deposition of dielectric and ferroelectric materials like lead lanthanum zirconate titanate (PLZT). The robust, highly crystalline SrRuO{sub 3} film fabrication process does not favor the formation of RuO{sub 2} because of molecular level modification of the precursors possessing analogous melting points, yielding homogeneous films. This chemistry is further understood and complemented by kinetic and thermodynamic analysis of the DTA data under nonisothermal conditions, with which the activation energies to form RuO{sub 2} and SrRuO{sub 3} were calculated to be 156 {+-} 17 and 96 {+-} 10 kJ/mol, respectively. The room-temperature resistivity of the SrRuO{sub 3} film was measured to be 850 {+-} 50 ...

2011-01-01

280

Non-thermal atmospheric pressure discharges for surface modification  

International Nuclear Information System (INIS)

Throughout the last decades, plasma technology has been established in a series of surface treatment applications, e.g. for semiconductor processing or optical coatings. The majority of plasma assisted technologies is based on low pressure processes. In recent years, however, non-thermal atmospheric pressure discharges have attracted considerable interest because of their simplified technical devices for industrial applications as compared to low pressure processes which require vacuum equipment. Hence, batch processing can be avoided, thus facilitating the implementation of plasma process steps into production lines. Investment costs are cut down significantly. The use of atmospheric pressure plasmas for technical applications dates back to the ozone production with dielectric barrier discharges (DBD) by Siemens in 1857. Lately, the application of atmospheric pressure plasmas for surface treatment has been reported, e.g. for the treatment of foils to improve printability, for surface ...

281

Direct digital radiography versus storage phosphor radiography in the detection of wrist fractures  

Energy Technology Data Exchange (ETDEWEB)

AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the ...

2002-04-01

282

Direct digital radiography versus storage phosphor radiography in the detection of wrist fractures  

International Nuclear Information System (INIS)

AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the ...

2002-04-01

283

VVER technology: Czechs check out and choose bitumenisation  

International Nuclear Information System (INIS)

Bituminization has to be selected as the process for conditioning radioactive liquid wastes arising from the two VVER V-230 reactors being built at Temelin in the Czech Republic. In the process, a thin-film evaporator, operating at a waste-product temperature of 160"oC, evaporates all free water from the waste effluents. Remaining solids are homogeneously dispersed in a bitumen matrix which solidifies through natural cooling of the binder. The relative simplicity of the process reduces construction costs for on-line waste facilities and operating costs are less given the cheap basic material and simple maintenance. The reliability of the process has been demonstrated at Western reactors and reprocessing plants though adaptations have had to be made to accept VVER effluents. (UK).

1994-01-01

284

Tin doping in spray pyrolysed indium sulfide thin films for solar cell applications  

British Library Electronic Table of Contents (United Kingdom)

This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...

2010-01-01

285

Thermal radiation from hot surfaces measured by optical and calorimetric methods. Master's thesis  

Energy Technology Data Exchange (ETDEWEB)

The radiative heat loss from a surface is determined by its total hemispherical emittance, which consequently plays an important role in aerospace and solar applications. This study compares emittances measured calorimetrically with values derived from near normal incidence spectral reflectance measurements. This optical derivation is based on a number of assumptions which limit the accuracy if not sufficiency fulfilled. These assumptions include sample specularity, a straybody character beyond the range of measurement, only small variations of emittance with temperature, and a perfectly smooth sample surface. The comparison of calorimetrically and optically derived emittance performed in this study not only quantifies the errors introduced by insufficient fulfillment of the assumptions but also identifies which assumption causes the dominant error. The calorimetric emissometer, constructed for this study and based on a heat flow sensor, was calibrated with aluminum and nickel ...

1982-01-01

286

The inertial dynamics of thin film flow of non-Newtonian fluids  

CERN Document Server

Consider the flow of a thin layer of non-Newtonian fluid over a solid surface. I model the case of a viscosity that depends nonlinearly on the shear-rate; power law fluids are an important example, but the analysis here is for general nonlinear dependence. The modelling allows for large changes in film thickness provided the changes occur over a large enough lateral length scale. Modifying the surface boundary condition for tangential stress forms an accessible base for the analysis where flow with constant shear is a neutral critical mode, in addition to a mode representing conservation of fluid. Perturbatively removing the modification then constructs a model for the coupled dynamics of the fluid depth and the lateral momentum. For example, the results model the dynamics of gravity currents of non-Newtonian fluids even when the flow is not very slow.

2007-01-01

287

Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL  

Energy Technology Data Exchange (ETDEWEB)

The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}, V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

1996-05-01

288

Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications  

CERN Document Server

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are ...

2001-01-01

289

Strong coupled organic microcavities  

International Nuclear Information System (INIS)

Strong coupled organic-inorganic microcavities device has been realized and studied. One of the two cavities contains an organic thin film of tetrakis(4-methoxyphenyl)porphyrin, whereas the other microcavity is a dielectric structure coupled to the organic one by means of a LiF/ZnS Bragg mirror. Reflectivity spectra show the presence of two well defined cavity dips. We observe an energy splitting of the two cavity-modes. Despite only one cavity contains the active layer, the photoluminescence spectra display two peaks at the same energy of the reflectivity dips. These observations indicate the strong coupling of the two cavities. The comparison of the diagonalized effective Hamiltonian with the observed resonances further confirms the strong coupling.

2010-02-01

290

Spin-polarized Auger-electron diffraction study of the magnetic poisoning of Fe(001) by sulfur  

International Nuclear Information System (INIS)

Spin-polarized angle-resolved sulfur L_2_,_3VV Auger-electron spectra have been recorded for the c(2x2)S/Fe(001) system. The data show the modulation of the sulfur Auger spin polarization as a function of emission angle, which represents an observation of spin-polarized Auger-electron diffraction (SPAED), a potentially powerful tool for the study of local magnetic structure at surfaces, interfaces, and thin films. Theoretical modeling of the SPAED data indicates a large decrease in the magnetization of the top iron layer, suggesting a magnetic poisoning induced by the sulfur overlayer. These findings are independently supported by the observation of a large decrease of secondary electron spin polarization upon sulfur adsorption.

291

Spin-cast carbon films from polyacrylonitrile  

Energy Technology Data Exchange (ETDEWEB)

Carbon films have been made by a variety of techniques, including evaporation, sputtering, and laser or thermal pyrolysis of organic polymers. Polyacrylonitrile (PAN) is often used as a carbon precursor, since low-temperature thermo-oxidative pretreatment produces a material which can be pyrolyzed without loss of shape. This is the basis for the production of carbon fibers with good mechanical properties. We report here the formation of very thin films of carbon (500 to 1500 A) by pyrolysis of spin-cast PAN. Using this technique, large, conductive films can be made which are sufficiently robust to allow intact lift-off and transfer of the films from one substrate to another. Such films are chemically inert, but can be photolithographically patterned and etched with an oxygen plasma.

1987-01-01

292

Spin polarisation and anomalous Hall effect in NiMnSb films  

International Nuclear Information System (INIS)

NiMnSb has attracted a great deal of interest as a spin injector/detector in spintronic devices because it has a Curie temperature of 728 K and is predicted to be half-metallic (100% spin polarized). NiMnSb has been reported to have greatly reduced surface polarization, and to lose its half metallicity above 80 K. Here we report the investigation of the surface polarisation and electronic structure of NiMnSb by measurement of the transport spin polarization using point contact Andreev reflection spectroscopy, and anomalous Hall effect in thin films on Si(0 0 1). A comparison to bulk properties is made.

2004-05-01

293

Silver removal process development for the MEO cleanout  

Energy Technology Data Exchange (ETDEWEB)

The Mediated Electrochemical Oxidation (MEO) system is an aqueous process which treats low-level mixed wastes by oxidizing the organic components of he waste into carbon dioxide and water. As MEO system continues to run, dissolved ash and radionuclides slowly accumulate in the anolyte and must be removed to maintain process efficiency. At such time, all of the anolyte is pumped into a still feed tank, and the silver ions need to be removed before sending the solution to a thin-film evaporator for further concentration. The efficiency of removing silver ions in the solution needs to be high enough such that the residual silver sent to Final Forms would be less than 1% wt. The purpose of this work is to develop an efficient process to remove silver ions during the MEO cleanout and to demonstrate the capability of centrifugation for separating small silver chloride particles from the solution. This development work includes lab scale experiments and bench scale tests. ...

1996-02-01

294

Self-organization and electrical properties of Head-to-Tail poly(3-hexylthiophene) in Langmuir-Blodgett films  

Energy Technology Data Exchange (ETDEWEB)

The conductive ultra thin films were fabricated from mixed monolayers containing stearic acid and Head-to-Tail poly(3-alkylthiophene). These films exhibited well-defined layered structures as determined by optical absorption and X-ray diffraction measurements. The UV-Vis absorption spectra of these films showed lower energy absorption shifts of 48 nm from that of the random poly(3-alkylthiophene)/stearic acid LB films. The blue shift of absorption maximum of the LB film is attributed to the increase of {pi}-conjugation length caused by no steric hindrance of alkyl side chains. The conductivity of the Head-to-Tail poly(3-hexylthiophene)/stearic acid LB films was greatly improved in the range of 67-100 S/cm. (orig.)

1997-01-01

295

Secondary electron yield measurements from thin surface coatings for NLC electron cloud reduction  

CERN Document Server

In the beam pipe of the positron damping ring of the Next Linear Collider, electrons will be created by beam interaction with the surrounding vacuum chamber wall and give rise to an electron cloud. Several solutions are possible for avoiding the electron cloud, without changing the bunch structure or the diameter of the vacuum chamber. Some of the currently available solutions for preventing this spurious electron load include reducing residual gas ionization by the beam, minimizing beam photon-induced electron production, and lowering the secondary electron yield (SEY) of the chamber wall. We will report on recent SEY measurements performed at SLAC on TiN coatings and TiZrV non-evaporable getter thin films.

2004-01-01

296

Reversible performance loss induced by sequential failed cold start of PEM fuel cells  

British Library Electronic Table of Contents (United Kingdom)

This study correlates the post start cell performance and impedance with the cold start process in the subzero environment. The sequential failed cold starts are deliberately conducted as well as the start at small current density. Here the failed cold start means the cell voltage drops to or below zero within very short time during the start process. It is found that there are reversible performance losses for the sequential failed cold starts, while not obvious degradation and no recovery happen for the start at small current density. Using the thin film and agglomerate model, it is confirmed that this is due to the water blocking effect. Comparing the results from different start processes, a model with respect to the shifting of reactive region within the catalyst layer is applied to e...

2011-01-01

297

Properties of low residual stress silicon oxynitrides used as a sacrificial layer  

Energy Technology Data Exchange (ETDEWEB)

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

2000-01-04

298

Process for treatment of detergent-containing radioactive liquid wastes  

Energy Technology Data Exchange (ETDEWEB)

A detergent-containing radioactive liquid waste originating from atomic power plants is concentrated to have about 10 wt. % detergent concentration, then dried in a thin film evaporator, and converted into powder. Powdered activated carbon is added to the radioactive waste in advance to prevent the liquid waste from foaming in the evaporator by the action of surface active agents contained in the detergent. The activated carbon is added in accordance with the COD concentration of the radioactive liquid waste to be treated, and usually at a concentration 2-4 times as large as the COD concentration of the liquid waste to be treated. A powdery product having a moisture content of not more than 15 wt. % is obtained from the evaporator, and pelletized and then packed into drums to be stored for a predetermined period.

1984-02-21

299

Process for treatment of detergent-containing radioactive liquid wastes  

International Nuclear Information System (INIS)

A detergent-containing radioactive liquid waste originating from atomic power plants is concentrated to have about 10 wt. % detergent concentration, then dried in a thin film evaporator, and converted into powder. Powdered activated carbon is added to the radioactive waste in advance to prevent the liquid waste from foaming in the evaporator by the action of surface active agents contained in the detergent. The activated carbon is added in accordance with the COD concentration of the radioactive liquid waste to be treated, and usually at a concentration 2-4 times as large as the COD concentration of the liquid waste to be treated. A powdery product having a moisture content of not more than 15 wt. % is obtained from the evaporator, and pelletized and then packed into drums to be stored for a predetermined period.

1984-02-01

300

Practical superconductor development for electrical power applications  

Energy Technology Data Exchange (ETDEWEB)

Development of useful high-critical-temperature (high-{Tc}) superconductors requires synthesis of superconducting compounds; fabrication of wires, tapes, and films from these compounds; production of composite structures that incorporate stabilizers or insulators; and design and testing of efficient components. This report describes technical progress of research and development efforts aimed at producing superconducting components based on the Y-Ba-Cu, Bi-Sr-Ca-Cu, Bi-Pb-Sr-Ca-Cu, and Tl-Ba-Ca-Cu oxides systems. Topics discussed are synthesis and heat treatment of high-{Tc} superconductors, formation of monolithic and composite wires and tapes, superconductor/metal connectors, characterization of structures and superconducting and mechanical properties, and fabrication and properties of thin films. Collaborations with industry and academia are also documented. 10 figs.

1991-10-01

301

Point-contact Andreev spectroscopy on thin Ni_2MnIn Heusler films  

International Nuclear Information System (INIS)

Heusler films with L2_1 and B2 structure are deposited simultaneously on amorphous carbon films, Si(100) surfaces, and in situ cleaved InAs(110) surfaces by coevaporation of Ni and the alloy MnIn. Morphology, structure, and stoichiometry are investigated with transmission-electron microscopy, electron diffraction, and X-ray spectroscopy. The almost perfect lattice match supports highly oriented growth of Ni_2MnIn on InAs, which is proven by electron diffraction under grazing incidence. The electrical resistivity of thin films on Si show metallic behavior. At temperatures of liquid helium point-contact Andreev reflection spectroscopy is performed on films grown on Si(100) and in situ cleaved InAs(110) surfaces yielding spin polarizations comparable to the ones of Fe, Ni, Co, and permalloy (Ni_8_0Fe_2_0).

2007-09-01

302

Oxygen reduction reaction on electrodeposited zinc oxide electrodes in KCl solution at 70 deg. C  

Energy Technology Data Exchange (ETDEWEB)

The reduction of oxygen was studied in 0.1 M KCl at 70 deg. C using the rotating disk electrode (RDE) technique on platinum and electrodeposited ZnO thin film electrodes deposited on platinum substrates. In the absence of Zn{sup 2+} ions in solution, a Tafel slope of 139 mV dec{sup -1} was obtained, a value close to that measured on bare platinum electrode (133 mV dec{sup -1}) and ascribed to the limitation of the reaction rate by the first electron transfer. The main difference between the noble metal and the oxide electrode was a shift of the curves towards more negative potentials. In the presence of Zn{sup 2+} ions, the current density decreased significantly and the Tafel slope was measured at 282 mV dec{sup -1} showing that the electrode was partially blocked by zinc oxide formation reaction intermediates.

2006-04-01

303

Optical and X-ray characterization of ferroelectric strontium-bismuth-tantalate (SBT) thin films  

International Nuclear Information System (INIS)

Metal-organic chemical vapor deposition (MOCVD) made layers of strontium-bismuth-tantalate (SBT) were characterized by spectroscopic ellipsometry (SE) using the Adachi model [S. Adachi, Phys. Rev. B 35 (1987) 7454-7463]. The evaluated optical parameters were correlated with the physical and chemical behavior examined by X-ray diffraction (XRD). As a result, it was possible to fit the measured spectra with the Adachi model in a wide range covering the region of the band gap. The Adachi model provides electronic layer parameters like the transition energy E 0 and broadening ?. Our investigations established a correlation between XRD-determined average grain size and the electronic layer parameters.

2006-10-31

304

New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991  

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

1993-01-01

305

New III-V cell design approaches for very high efficiency  

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

1993-01-01

306

Molecular dynamics simulation of effect of indenter shape on nanoscratch of Ni  

British Library Electronic Table of Contents (United Kingdom)

Thin films of Ni and Ni alloy have been widely used in microelectromechanical systems (MEMS) and magnetic storage systems. As the dimensions of components in these systems decrease to the micro-scale, even the nano-scale, the interfacial phenomena significantly differ to the counterparts on the macro-scale. A better understanding of micro-/nano-tribology will benefit the fabrication of the small components. In this manuscript parallel molecular dynamics (MD) simulations have been conducted to investigate the nanoscratch behavior of nickel. The simulations are performed for two cases with different indenter shapes. Case I has a sharp indenter, while the indenter in Case II is blunt. It has been found that the indenter shape significantly influences the nanoscratch deformation. The sharp ind...

2009-01-01

307

Modification of intergrain connectivity, upper critical field anisotropy and critical current density in ion irradiated MgB{sub 2} films  

Energy Technology Data Exchange (ETDEWEB)

We compare the effect of isotropic point defects vis a vis extended defects on the inter and intra grain properties of superconducting MgB{sub 2} thin films. In a recent paper Gandikota et al. [Appl. Phys. Lett. 86 (2005) 012508] reported that after 200 MeV {alpha} particle irradiation intergrain connectivity remains unaffected. Our results on the contrary indicate that connectivity does depend on irradiation dose and type of ions used. We ascertain that extended defects alter the {sigma} band properties of this two-band superconductor more effectively than the point defects. The improvement in upper critical field and critical current density is intricately related to the type and density of defects created.

2006-08-01

308

Method of reducing volume of radioactive liquid waste  

International Nuclear Information System (INIS)

Purpose: To enable the solidification of liquid waste containing radioactive substance in a free shape with large volume reduction ratio without a pulverizing step by producing solute in the liquid waste as a slurry in a predetermined organic solvent and forming it into a cake by mechanical exfoliation. Method: Liquid waste containing suitably concentrated radioactive substances is supplied to a centrifugal thin film evaporator together with an organic agent having a higher boiling point than water and a non aqueous solution to evaporate the water content, the solute in the waste is produced as a slurry in the organic solvent, and removed as cake-state solute slightly residued with the organic solvent by the mechanical exfoliation such as centrifugal exfoliation or settling exfoliation from the slurry-state liquid. Accordingly, it can be increased in size as compared with the powder reduced in volume of the radioactive liquid waste, and can be ...

1981-08-01

309

MOCVD growth of GaAs solar cells on silicon substrates  

Energy Technology Data Exchange (ETDEWEB)

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

1992-12-01

310

Lowering the activation temperature of TiZrV non-evaporable getter films [for LHC  

CERN Document Server

In order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless-steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger electron spectroscopy during specific in situ thermal cycles. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy and the morphology (crystal structure and size of the crystallites) has been investigated by X-ray diffraction. The criteria indicating the sample quality and its dependence on film structure and chemical composition are presented and discussed. (13 refs).

2001-01-01

311

Long-term, low-level radwaste volume-reduction strategies. Volume 3. Characterization of low-level radwaste volume-reduction installations. Final report  

Energy Technology Data Exchange (ETDEWEB)

This study characterized selected commercial volume reduction technologies as to performance and associated costs. VR facility designs were developed for each of the reference VR technologies. Associated on-site storage requirements and cost were also determined. Eight VR technologies were selected for consideration: improved compactor; high pressure compactor (supercompactor); incinerator; fluid bed dryer and incinerator; evaporator crystallizer; evaporator extruder; mobile incinerator; and mobile thin-film evaporator. A representative facility design was developed for each VR technology and for several combinations of technologies. Thirteen separate cases are noted in the following table when retrofit and new facilities are considered.

1984-11-01

312

Liquid crystal films on curved surfaces: An entropic sampling study  

CERN Document Server

The confining effect of a spherical substrate inducing anchoring (normal to the surface) of rod-like liquid crystal molecules contained in a thin film spread over it has been investigated with regard to possible changes in the nature of the isotropic-to-nematic phase transition as the sample is cooled. The focus of these Monte Carlo simulations is to study the competing effects of the homeotropic anchoring due to the surface inducing orientational ordering in the radial direction and the inherent uniaxial order promoted by the intermolecular interactions. By adopting entropic sampling procedure, we could investigate this transition with a high temperature precision, and we studied the effect of the surface anchoring strength on the phase diagram for a specifically chosen geometry. We find that there is a threshold anchoring strength of the surface below which uniaxial nematic phase results, and above which the isotropic fluid cools to a ...

2010-01-01

313

LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition  

Energy Technology Data Exchange (ETDEWEB)

A 15-nm lithium fluoride (LiF) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions. The effect is more pronounced at low substrate temperatures, nucleation density being 10 times higher at {approx} 80 {sup o}C. The effect is ascribed to the ionic chemical nature of LiF, the low work function material used in organic electronic devices, and we propose its use for micro patterning crystalline Si regions in otherwise amorphous Si film.

2009-10-30

314

LDRD summary report. Part 1: initiation studies of thin film explosvies used for scabbling concrete. Part 2: investigation of spray techniques for use in explosive scabbling of concrete  

Energy Technology Data Exchange (ETDEWEB)

We describe a new method for the scabbling of concrete surfaces using a thin layer of explosive material sprayed onto the surfaces. We also developed a new explosive mixture that could be applied with commercial spray painting equipment. The first part of our record describes experiments that studied methods for the initiation of the sprayed explosive. We successfully initiated layers 0.36 mm thick using a commercial EBW detonator, a flying plate detonator, and by pellet impact. The second part of our report describes a survey of spray methods and tests with two commercial spray systems that we believe could be used for developing a robotic spray system.

1996-11-01

315

Ion-induced phase formation in metal-silicon systems. [Xenon ion implantation effects  

Energy Technology Data Exchange (ETDEWEB)

By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.

1985-01-11

316

Ion-induced phase formation in metal-silicon systems  

International Nuclear Information System (INIS)

By using megaelectronvolt "4He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd_2Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni_2Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment. (Auth.).

317

Investigations of microstructure of thin TbFeCo films by high-resolution electron microscopy  

International Nuclear Information System (INIS)

High-resolution electron microscope observations confirm the presence of small crystallites in thin TbFeCo films protected by Si_3N_4 overcoats. Selected area electron diffraction patterns in top-view projection indicate that the crystals have a face-centered-cubic structure. Microscope analysis reveals grain growth following annealing of these protected thin films at 200 degree C in vacuum, and Kerr measurements yield large reductions in coercivity relative to the room-temperature value. The typical grain size visible in top-view observations increases from about 3 nm in the as-deposited samples to about 30 nm after annealing at 200 degree C for 36 h while the static coercivity, H_c, drops by about 40%. The fcc structure of the crystals is retained after annealing.

318

Inhibition effects on fermentation of hardwood extracted hemicelluloses by acetic acid and sodium  

British Library Electronic Table of Contents (United Kingdom)

Extraction of hemicellulose from hardwood chips prior to pulping is a possible method for producing ethanol and acetic acid in an integrated forest bio-refinery, adding value to wood components normally relegated to boiler fuel. Hemicellulose was extracted from hardwood chips using green liquor, a pulping liquor intermediate consisting of aqueous NaOH, Na2CO3, and Na2S, at 160degreeC, held for 110min in a 20L rocking digester. The extracted liquor contained 3.7% solids and had a pH of 5.6. The organic content of the extracts was mainly xylo-oligosaccharides and acetic acid. Because it was dilute, the hemicellulose extract was concentrated by evaporation in a thin film evaporator. Concentrates from the evaporator reached levels of up to 10% solids. Inhibitors such as acetic acid and sodium ...

2010-01-01

319

Impacts of membrane properties on reactive dye removal from dye/salt mixtures by asymmetric cellulose acetate and composite polyamide nanofiltration membranes  

British Library Electronic Table of Contents (United Kingdom)

This paper aims to study fundamentally the impacts of membrane properties on the reactive dye removal from dye/salt mixtures by nanofiltration membranes. To begin with, two types of nanofiltration membranes of similar pore size, namely asymmetric cellulose acetate membrane and thin-film composite polyamide membrane were fabricated, and their key physical, chemical and performance properties were characterized. After that, these resultant membranes were employed to perform dye removal experiments with aqueous solutions of reactive black 5 and NaCl under different operational parameters. The dye removal rate and steady permeate flux were determined and correlated with the measured membrane properties. It was found that there were significant differences between the dye removal performances o...

2010-01-01

320

I. Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. II. Large-area uniform growth of Si layer by solid-phase epitaxy. Final report  

Energy Technology Data Exchange (ETDEWEB)

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

1981-01-01

321

Gauge effects on phase transitions in superconductors  

CERN Document Server

Classic and recent results for gauge effects on the properties of the normal-to-superconducting phase transition in bulk and thin film superconductors are reviewed. Similar problems in the description of other natural systems (liquid crystals, quantum field theory, early universe) are also discussed. The relatively strong gauge effects on the fluctuations of the ordering field at low spatial dimensionality D and, in particular, in thin (quasi-2D) films are considered in details. A special attention is paid to the fluctuations of the gauge field. It is shown that the mechanism in which these gauge fluctuations affect on the order of the phase transition and other phase transition properties varies with the variation of the spatial dimensionality D. The problem for the experimental confirmation of the theoretical predictions about the order of the phase transitions in gauge systems is discussed.

2006-01-01

322

Friction in ultra-thin conjunction of valve seals of pressurised metered dose inhalers  

British Library Electronic Table of Contents (United Kingdom)

In many drug dispensing devices, such as syringes and inhalers, an elatomeric gasket is used to prevent the formulation from leaking from the chamber. During device actuation, the seal is subjected to friction, which in turn causes its deformation and can cause unintentional leakage, thus dose variability. Additionally, friction of seal is responsible for a host of potential problems such undue effort required for actuation and potential wear. The mechanism of friction generation in the seal conjunction is complex, arising from adhesion of rubber in contact with the moving interface, viscous action of a thin film of fluid and deformation of seal asperities. Therefore, the first step in understanding the conjunctional behaviour of rubber seals is a fundamental study of mechanisms of frictio...

2010-01-01

323

Evaluation of the evaporation behavior of Pd, Mo, Te, and Sb in simulated low level radioactive liquid waste  

International Nuclear Information System (INIS)

To sophisticate the nuclear fuel recycling processes, the transfer percentages for Pd, Mo, Te, and Sb should be determined. Each element solution containing NaNO_3 or HNO_3 was fed consistently into the thin film evaporator regulated in vac and at 50 deg C. The analyte percentages in the inside of the lid, in the condenser, and in the distillate were 10"-"1%/m"2, 10"-"3%/m"2, and 10"-"3% (DF = 10"5), respectively. The Mo percentage in the condenser was lower by a factor of 10 than those of other elements investigated. The NO_3"- percentages were nearly constant despite increasing HNO_3 concentrations, however, the ratios decreased with increasing NaNO_3 concentrations. (author)

2003-02-01

324

Effects of multiwall carbon nanotubes on the thermal and mechanical properties of medium density polyethylene matrix nanocomposites produced by a mechanical milling method  

British Library Electronic Table of Contents (United Kingdom)

Medium-density polyethylene/multiwall carbon nanotube (MDPE/MWCNT) nanocomposites were produced by a mechanical milling method using a high-energy ball mill. The MDPE and MWCNTs were added to the ball mill at a constant 20:1 weight ratio of ball/powders and milled for 10 h to obtain polyethylene matrix nanocomposites reinforced with 0.5, 1, 2.5, and 5 weight percent of MWCNTs. To clarify the role of both MWCNT content and milling time on the morphology of MDPE, some nanocomposite samples were investigated by using a scanning electron microscope. To evaluate the role of milling on the microstructure of the nanocomposites, very thin films of MDPE/MWCNTs were prepared and studied by transmission electron microscopy. Thermal behavior of these nanocomposites was investigated by using differenti...

2010-01-01

325

Effects of carbon fiber surface treatment on the friction and wear behavior of 2D woven carbon fabric/phenolic composites  

British Library Electronic Table of Contents (United Kingdom)

To improve the friction and wear behavior of carbon fabric reinforced polymer composites (CFRP), nano-SiO2 was deposited on the fabric surface. The friction and wear behavior of the resulting composites were investigated on a model ring-on-block test rig. Experimental results revealed that fiber surface treatment contributed to largely improve the tribological properties of the CFRP composites. Scanning electron microscope (SEM) investigation showed that the worn surface of the surface modified CFRP composite was smoother under given load and sliding rate. Field emission scanning electron microscopy (FESEM), FTIR and X-ray photoelectron spectroscopy (XPS) studies of the carbon fiber surface showed that nanostructured Sio2 thin film can be obtained by SiO2 sols deposition, which improved th...

2009-01-01

326

Effect of processing of dates into date juice concentrate and appraisal of its quality characteristics  

British Library Electronic Table of Contents (United Kingdom)

Date palm (Phoenix dactylifera) is widely cultivated in Kutch district of Gujarat and the fruits are harvested at immature stage before the onset of monsoon to prevent spoilage. The immature date fruits with less commercial value were used for processing into date juice concentrate. Immature dates were crushed and treated with 0.1% pectinase enzyme for 120 min to obtain maximum juice. Date juice was found to be rich in reducing sugars (16.1%) and total sugars (18.3%). Juice was pasteurized at 85?C to inactivate the enzyme, cooled and centrifuged at 3000 rpm to get clear juice. The juice was concentrated in a thin film evaporator to a total soluble solids (TSS) of 76?Brix in 2 passes. Chemical composition of date juice during different stages of concentration was determined. Date juice conc...

2010-01-01

327

Development of process technology for large-area thin-film solar modules based on compound semiconductors. Final report; Entwicklung der technologischen Grundlagen fuer grosse Photovoltaikmodule auf Basis von Duennschicht-Verbindungshalbleitern. Abschlussbericht  

Energy Technology Data Exchange (ETDEWEB)

A cooperative effort of the Center for Solar Energy and Hydrogen Research (ZSW) and Phototronics Solartechnik GmbH (PST) aimed at the transfer of highly efficient solar cells developed on a laboratory scale, to large-area thin-film solar modules suitable for production. This work was based on research and development at the Institute for Physical Electronics (IPE) of Stuttgart University and ZSW on one hand, and on the know-how of PST in regard to large-area module fabrication on the other hand. The various thin-film layers of the cells and modules comprize molybdenum as rear contact, copper-indium(gallium)-diselenide (CIGS) as absorber material, the combination of cadmium sulphide (CdS) and ZnO as window layer. To produce these layers on large areas (30x30 cm{sup 2}), equipment was constructed and procedures were developed. Monolithic series connection of cells, used in other thin-film technologies, was studied and ...

1998-06-01

328

Development of nanocomposite polymer materials for electrical and electronic applications  

International Nuclear Information System (INIS)

Some results and experimental procedures of laboratory are reported in the frame of researches conducted for the development of new nanostructured composite materials. These new materials, which are constituted by an organic phase: the polymer and an inorganic phase: the silicate, are being strongly investigated nowadays so it is expected that they could provide, among other, better electrical insulation properties and flame-delay in electrical and electronic applications. The laboratory experimental work has been developed from two families of polymers, thermoplastics and thermosets and clays silicates providing lamellar type. There are now some preliminary results, such as obtaining thin films of these nanocomposite materials, their complete characterization by X-ray diffraction, scanning microscopy and thermogravimetric analysis, they do well to wait for future research activities. (author)

2007-01-01

329

Converting Simulated Sodium-bearing Waste into a Single Solid Waste Form by Evaporation: Laboratory- and Pilot-Scale Test Results on Recycling Evaporator Overheads  

Energy Technology Data Exchange (ETDEWEB)

Conversion of Idaho National Engineering and Environmental Laboratory radioactive sodium-bearing waste into a single solid waste form by evaporation was demonstrated in both flask-scale and pilot-scale agitated thin film evaporator tests. A sodium-bearing waste simulant was adjusted to represent an evaporator feed in which the acid from the distillate is concentrated, neutralized, and recycled back through the evaporator. The advantage to this flowsheet is that a single remote-handled transuranic waste form is produced in the evaporator bottoms without the generation of any low-level mixed secondary waste. However, use of a recycle flowsheet in sodium-bearing waste evaporation results in a 50% increase in remote-handled transuranic volume in comparison to a non-recycle flowsheet.

2004-01-01

330

Concentration profiles of passive films formed on niobium metal and niobium-base alloys by Auger electron spectrometry  

International Nuclear Information System (INIS)

Concentration profiles of passive films formed on electrolytically anodized niobium and niobium-base alloys are obtained by Auger Electron Spectroscopy with simultaneous ion beam etching. The alloys investigated include 5Zr-Nb, 3Zr-10Ti-Nb, 2.5Zr-2W-Nb, and 1Zr-5Mo-5V-Nb. Experiments demonstrate that AES is among the most fascinating techniques for solving various characterization problems related to the structure and composition of the thin films formed by anodization. Data presented supports evidence that combined anodic and cathodic movements take place during film growth. 11 figures.

1976-01-01

331

Characterization of physically vapor deposited AF2400 thin films  

Energy Technology Data Exchange (ETDEWEB)

Anti-reflective coatings made with Teflon AF2400 had the highest damage thresholds recorded for physical vapor deposited coatings at the Lawrence Livermore National Laboratory damage facility. Physical vapor deposited layers of Teflon AF2400, a perfluorinated amorphous polymer, maintained the bulk optical properties of a high transmittance from 200 nm to 1600 nm, and a low refractive index. In addition, the refractive index can be intentionally reduced by control of two common deposition parameters, deposition rate and substrate temperature. Scanning electron microscopy and nuclear magnetic resonance observations indicated that morphological changes caused the variations in the refractive index rather than compositional changes. The coatings adhered to fused silica and silicon wafers under normal laboratory handling conditions.

1993-11-01

332

Broad-band hard X-ray reflectors  

DEFF Research Database (Denmark)

Interest in optics for hard X-ray broad-band application is growing. In this paper, we compare the hard X-ray (20-100 keV) reflectivity obtained with an energy-dispersive reflectometer, of a standard commercial gold thin-film with that of a 600 bilayer W/Si X-ray supermirror. The reflectivity of the multilayer is found to agree extraordinarily well with theory (assuming an interface roughness of 4.5 Angstrom), while the agreement for the gold film is less, The overall performance of the supermirror is superior to that of gold, extending the band of reflection at least a factor of 2.8 beyond that of the gold, Various other design options are discussed, and we conclude that continued interest in the X-ray supermirror for broad-band hard X-ray applications is warranted.

1997-01-01

333

Basic Sciences Branch annual report, FY 1990  

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL's in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy's National Photovoltaic Research Program plans.

1991-12-01

334

Basic Sciences Branch annual report, FY 1990  

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL`s in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy`s National Photovoltaic Research Program plans.

1991-12-01

335

Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures  

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

1975-01-01

336

Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures  

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

337

An in situ observation of the growth kinetics and stress relaxation Pd sub 2 Si thin films on Si(111)  

Energy Technology Data Exchange (ETDEWEB)

The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.

1990-04-15

338

An in situ observation of the growth kinetics and stress relaxation Pd sub 2 Si thin films on Si(111)  

Science.gov (United States)

The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.

1990-04-15

339

A new approach of the understanding of sulfur dioxide reduction in non-aqueous solvent; Une nouvelle approche de la comprehension de la reduction du dioxyde de soufre en solvant non aqueux  

Energy Technology Data Exchange (ETDEWEB)

The study of SO{sub 2} reduction in non-aqueous solvent can help to understand the functioning of Li/SO{sub 2} batteries and to find a simpler way for the synthesis of Li{sub 2}S{sub 2}O{sub 4} dithionite. This paper presents the results of electrochemical studies (cycle volt-amperometry in semi-infinite and thin film diffusion conditions, visible spectro-electrochemistry) and spectroscopic studies (UV, visible and RPE) performed on SO{sub 2} solutions. A mechanism of SO{sub 2} reduction is proposed and discussed. (J.S.) 18 refs.

1996-12-31

340

Semi-empirical simulation of thermoluminescent response under different filter geometries; Simulacao semi-empirica da resposta termoluminescente sob diferentes geometrias de filtro  

Energy Technology Data Exchange (ETDEWEB)

Many thermoluminescent materials has been developed and used for photon personal dosimetry but no one has all desired characteristics alone. These characteristics include robustness, high sensitivity, energy photon independence, large range of photon energy detection, good reproducibility, small fading and simple glow curve with peaks above 150 deg C. Calcium Sulfate Dysprosium doped (CaSO{sub 4}:Dy) phosphor Thermoluminescent Dosimeter (TLD) has been used by many laboratories, mainly in Brazil and India. Another interesting phosphor is Calcium Fluoride (CaF{sub 2}). These phosphor advantages begin to be more required and its disadvantages have became more apparent, in a global market more and more competitive. These phosphors are used in environmental and area monitoring, once they present more sensibility than other phosphors, like LiF:Mg. Theirs mainly disadvantage is a strong ...

2006-07-01

341

Ultra-fast charge transfer in organic electronic materials and at hybrid interfaces studied using the core-hole clock technique  

Energy Technology Data Exchange (ETDEWEB)

Research highlights: {yields} The use of resonant photoemission in its 'core-hole clock' expression for the study of the dynamical charge transfer across hybrid organic-inorganic interfaces and for the intermolecular charge transfer in the bulk of organic thin films is reviewed. {yields} The electronic coupling to the substrate and the efficiency of charge transport across hybrid interfaces is different for individual electronic subsystems of the molecular adsorbate. {yields} The intermolecular charge transfer in the bulk of discotic liquid crystals occurs on the order of a few femtoseconds and is faster than expected from the macroscopic charge transport characteristics of the material. -- Abstract: The focus of this brief review is the use of resonant photoemission in its 'core-hole clock' expression for the study of two important problems relevant for the field of organic electronics: the dynamical charge ...

2011-01-15

342

Thermal annealing effect on optical properties of electrodeposited ZnO thin films  

Energy Technology Data Exchange (ETDEWEB)

ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band after annealing at 200 {sup 0}C. A visible ...

2008-10-07

343

Processing of La/sub 1. 8/Sr/sub 0. 2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films by dual-ion-beam sputtering  

Science.gov (United States)

High quality La/sub 1.8/Sr/sub 0.2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 ..mu..m thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF/sub 2/, Si, CaF/sub 2/, ZrO/sub 2/-9% Y/sub 2/O/sub 3/, BaF/sub 2/, Al/sub 2/O/sub 3/, and SrTiO/sub 3/. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa/sub 2/Cu/sub 2/O/sub 7/ structure, in the case of SrTiO/sub 3/ substrate. The best ...

1988-03-15

344

Polycrystalline silicon thin film solar cells prepared by PECVD-SPC  

Energy Technology Data Exchange (ETDEWEB)

Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to 650-700 C for 12 h until ...

2008-07-15

345

Optical properties of crystalline and non-crystalline iron oxide thin films deposited by spray pyrolysis  

International Nuclear Information System (INIS)

Crystalline and non-crystalline iron oxide (#alpha#-Fe_2O_3) thin films were obtained by spray pyrolysis onto glass substrate at different temperatures. The results of X-ray diffraction showed that with increasing the deposition time, the film structure changed from non-crystalline to crystalline at the same substrate temperature. At different substrate temperatures and low deposition times (5 min), iron oxide appears almost in non-crystalline form. With rising the substrate temperature and deposition time, the crystallinity was improved. The effect of substrate temperature as well as deposition time on the optical features (absorption coefficient and bandgap) and optical constants of these films has been investigated. Optical constants of the films were determined from spectrophotometric measurement of reflectance and transmittance. Analysis of the results showed that, for non-crystalline iron oxide films of different thicknesses (76-118 nm) ...

2004-06-30

346

Optical modeling of compound CuInS{sub 2} using relative dielectric function approach and Boubaker polynomials expansion scheme BPES  

Energy Technology Data Exchange (ETDEWEB)

The ternary compound CuInS{sub 2} is attractive for solar cells due to its band gap of 1.54 eV which borders the optimum value necessary for conversion of a solar spectrum. Recently, works on thin film cells based on this material (ZnO/CuInS{sub 2}) has been reported to show efficiency as high as 11.4%. In this paper, the orientation and the morphology of CuInS{sub 2} sprayed films are determined by the means of X-ray diffraction and scanning electron microscopy. Sprayed CuInS{sub 2} films deposited onto a transparent Pyrex substrate with standard fabrication parameters show a chalcopyrite structure with a preferential orientation (1 1 2). A model based on the calculation of the relative dielectric function {epsilon} has been performed in order to obtain the profile of variation of this parameter and to understand the optical behavior of this material via its transmittance and reflectance in visible and near-infrared regions (0.35-2.5 {mu}m). ...

2009-07-29

347

Optical modeling of compound CuInS2 using relative dielectric function approach and Boubaker polynomials expansion scheme BPES  

International Nuclear Information System (INIS)

The ternary compound CuInS2 is attractive for solar cells due to its band gap of 1.54 eV which borders the optimum value necessary for conversion of a solar spectrum. Recently, works on thin film cells based on this material (ZnO/CuInS2) has been reported to show efficiency as high as 11.4%. In this paper, the orientation and the morphology of CuInS2 sprayed films are determined by the means of X-ray diffraction and scanning electron microscopy. Sprayed CuInS2 films deposited onto a transparent Pyrex substrate with standard fabrication parameters show a chalcopyrite structure with a preferential orientation (1 1 2). A model based on the calculation of the relative dielectric function ? has been performed in order to obtain the profile of variation of this parameter and to understand the optical behavior of this material via its transmittance and reflectance in visible and near-infrared regions (0.35-2.5 ?m). In the same way, considering the ...

2009-07-29

348

Microstructure and electrical properties of iron oxide thin films deposited by spray pyrolysis  

International Nuclear Information System (INIS)

Microstructure and electrical properties of iron oxide Fe_2O_3 thin films prepared by spray pyrolysis method have been experimentally characterized. The effect of substrate temperature as well as deposition time on the structural features (crystallite size and microstrain) and electric resistivity of these films has been investigated. X-ray diffraction (XRD) and scanning electron microscope (SEM) characterized the structure study. The results of X-ray diffraction showed that with increasing substrate temperature bias the film structure changed from amorphous to crystalline at the same deposition time. At a substrate temperature of 350 deg. C and low deposition time, #alpha#-Fe_2O_3 appears almost in amorphous form. With rising the substrate temperature and deposition time, the crystallinity was improved. At T_s_u_b>350 deg. C, a well-crystallized rhombohedral phase of #alpha#-Fe_2O_3 was obtained. Single order Voigt profile method has been ...

2004-01-15

349

Microstructural stability on aging of an #alpha# + #beta# titanium alloy: Ti-6Al-1.6Zr-3.3Mo-0.30Si  

International Nuclear Information System (INIS)

The development of the microstructure on aging of an (#alpha# + #beta#) type titanium alloy containing 6Al-1.6Zr-3.3Mo-0.3Si (VT9) (in weight percent) has been studied. The #beta#-transus temperature of this alloy is approximately 1243 K. Solution treatment in the #beta#-phase field of the alloy followed by quenching in water at room temperature resulted in the formation of a single-phase martensite structure. The martensitic structure was confirmed to be orthorhombic (#alpha# double-prime) using X-ray diffraction. The water-quenched (WQ) specimens were subjected to aging treatments at temperatures of 823, 873, and 973 K for various lengths of time. Aging at 823 K for times between 24 and 100 hours did not bring about any noticeable change in the microstructure. Aging at 823 K for 200 and 300 hours resulted in the heterogeneous precipitation of s_2 silicide particles and thin films of #beta# sandwiched between the interplatelet boundaries of ...

350

Japan`s New Sunshine Project. 1994 annual summary of solar energy R and D program; 1994 nendo new sunshine keikaku. Seika hokokusho gaiyoshu (taiyo energy)  

Energy Technology Data Exchange (ETDEWEB)

The paper reported the results of fiscal 1994 studies on solar energy in the New Sunshine Project. Relating to the technical development for the practical use of photovoltaic power systems, the development of manufacturing technologies for low-cost substrates and the development of element technology for manufacturing low-cost polycrystalline cells/modules were reported as the development of technology for thin substrate polycrystalline solar cells for practical use. As to the research on fabrication technology for thin film solar cells for practical use, reports were made on the research on low-cost fabrication technology for large-area modules and the technological development for qualitative improvement, etc. In respect to the technological development for super-high efficiency solar cells, reported were the technological development for super-high efficiency single crystalline silicon solar cells and the technological development for ...

1994-12-01

351

Hydrotreat used lube oil  

Energy Technology Data Exchange (ETDEWEB)

Mild hydrotreating is the key to successful re-refining of used lubricating oils. Coupled with pre-distillation and metals removal, the process produces oil of superior color and clarity with acceptable viscosity and heteroatom content. Furthermore, the entire process provides operational simplicity, economic feasibility and environmental attractiveness. Re-refining preserves a valuable resource while solving a potential environmental problem. Increased sensitivity to disposal of hazardous material once again makes re-refining almost a necessity. Various technologies developed to re-refine used lubricating oils range from simple acid/clay contacting to complex solvent extraction. Most technologies require similar capital investment; however, operating costs vary substantially. Current technology seems to converge on a two-step procedure: distillation of dehydrated used oil in a thin-film evaporator, and subsequent hydrotreating of distilled stocks. Filtered used ...

1986-04-01

352

Grazing incidence X-ray diffraction and neutron reflection studies of semi-crystalline polymer surfaces and interfaces[Polymers; Crystallisation behaviour  

Energy Technology Data Exchange (ETDEWEB)

This thesis is concerned with the crystallisation behaviour of polymers near to a free surface or a buried interface. The properties of polymers are expected to differ significantly near to an interface (either with air or another polymer), due to the contributions of (a) chain configurations induced at the interface, and (b) different mobilities between interfacial regions and the bulk of the sample. For a semi-crystalline polymer, properties such as the degree of crystallinity and the crystallisation kinetics may be enhanced near to a free surface. Grazing incidence x--ray diffraction (GIXD) is used to investigate such effects in poly(ethylene terphthalate) (PET), showing that a lower crystallisation temperature is obtained at the surface, and the crystallisation kinetics are faster at the surface for all temperatures. It is proposed that in thin films of PET, this surface-induced ordering provides nucleation sites for crystallisation in the ...

2002-07-01

353

Glycolate adsorption at gold and platinum electrodes: A theoretical and in situ spectroelectrochemical study  

Energy Technology Data Exchange (ETDEWEB)

The adsorption of glycolate anions at sputtered gold thin-film electrodes was studied in perchloric acid solutions by cyclic voltammetry experiments combined with in situ Surface Enhanced Raman Scattering (SERS) and Surface Enhanced Infrared Reflection Absorption Spectroscopy under attenuated total reflection conditions (ATR-SEIRAS). Theoretical harmonic vibrational frequencies and band intensities obtained from B3LYP/LANL2DZ,6-31+G(d) calculations for glycolate species adsorbed on Au clusters with (1 1 1) orientation were used to interpret the experimental spectra. Vibrational data confirm the bidentate bonding of glycolate anions through the oxygen atoms of the carboxylate group, in a bridge configuration with the OCO plane perpendicular to the metal surface. The DFT calculations show no significant effect of the total charge of the metal cluster-adsorbate adduct on the vibrational frequencies of adsorbed glycolate species. The infrared experimental study is ...

2010-02-15

354

Formation of organic thin film by hot wall vapor deposition. Hot wall jochakuho ni yoru yuki usumaku no keisei  

Energy Technology Data Exchange (ETDEWEB)

The process operation of the hot wall vapor deposition method, formation of dry organic thin film and the control of molecular arrangement were described. This equipment included a substrate on the upper end of the hot wall tube and the vapor source at the lower end. The remarkable features are the hot wall tube which plays the role to hold vaporizing molecules to the high temperature and to transport molecules, and the flip flop mechanism which gives some idle period for the molecular vaporization by shutter closing. Several experiments were carried out by using stearic acid and by changing the distance S from the upper end of hot wall quartz tube to the substrate, the furnace temperature T{sub f} and the substrate temperature T{sub s}. When T{sub f} is equal to or less than the melting point of stearic acid, molectles are preferentialy made to vertical arrangement. In the case of T{sub f} more than the melting point, the molecular rate of the ...

1991-12-01

355

Formation of metal oxides by cathodic arc deposition  

Energy Technology Data Exchange (ETDEWEB)

Cathodic arc deposition is an established and industrially applied technique for the formation of nitrides (e.g. TiN); it can also be used for metal oxide thin film formation. A cathodic arc plasma source with the desired cathode material is operated in an oxygen atmosphere of appropriate pressure, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on accelerator components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub ...

1995-11-01

356

Focus ion beam preparation of transmission electron microscope sample in polymer clay nano composite  

International Nuclear Information System (INIS)

This paper deals with preparation of PE clay nano composite specimen for transmission electron microscopy (TEM) and studying the difference between dispersion of clay in low density polyethylene using poly(hydrogen methyl siloxane) (PHMS) as coupling agent and untreated one. Argon ion milling is the conventional means by which film sections are thinned to electron transparency for TEM analysis, but this technique exhibits significant problems. In particular, selective thinning and imaging of sub-micrometer inclusions during sample milling are highly problematic. We have achieved successful results using the focused ion beam (FIB) lift-out technique, which utilizes a 30 kV Ga"+ ion beam to extract electron transparent specimens with nanometer scale precision. Using this procedure, we have prepared a number of thin film materials representing a range of structures and compositions for TEM analysis. We believe that FIB milling will create major ...

2006-01-01

357

Characterisation of thin films by phase modulated spectroscopic ellipsometry  

International Nuclear Information System (INIS)

A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (#chi#"2) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done ...

2009-12-01

358

A systematic neutron reflectometry study on hydrogen absorption in thin Mg{sub 1-x}Al{sub x} alloy films  

Energy Technology Data Exchange (ETDEWEB)

Various methods for storing hydrogen have been examined in an effort to find ways to store hydrogen in increasingly smaller volumes with decreasing weight of the whole hydrogen storage system. Metal hydrides, in which hydrogen is chemically bound to a metal atom, are considered to be very promising candidates for hydrogen storage because they have high gravimetric and volumetric storage capacities. This study investigated the effect of different magnesium (Mg) and aluminium (Al) ratios on the absorption and desorption properties of thin films. Neutron reflectometry (NR) was used in this study to better understand the absorption and desorption properties of commercially promising hydrogen storage materials. The large negative scattering length of hydrogen atoms changes the reflectivity curve substantially, so that NR can determine the total amount of stored hydrogen as well as the hydrogen distribution along the film normal, with nanometer ...

2010-10-15

359

Nanocrystal conversion chemistry: A unified and materials-general strategy for the template-based synthesis of nanocrystalline solids  

International Nuclear Information System (INIS)

The concept of nanocrystal conversion chemistry, which involves the use of pre-formed nanoparticles as templates for chemical transformation into derivative solids, has emerged as a powerful approach for designing the synthesis of complex nanocrystalline solids. The general strategy exploits established synthetic capabilities in simple nanocrystal systems and uses these nanocrystals as templates that help to define the composition, crystal structure, and morphology of product nanocrystals. This article highlights key examples of 'conversion chemistry' approaches to the synthesis of nanocrystalline solids using a variety of techniques, including galvanic replacement, diffusion, oxidation, and ion exchange. The discussion is organized according to classes of solids, highlighting the diverse target systems that are accessible using similar chemical concepts: metals, oxides, chalcogenides, phosphides, alloys, intermetallic compounds, sulfides, and ...

2008-07-01

360

Microstructure and magnetic properties of nanocrystalline Fe75Si20M5 (M = Al, B, Cr) powders  

International Nuclear Information System (INIS)

Nanocrystalline Fe75Si20M5 (M = Al, B and Cr) powders were synthesized by mechanical alloying in a planetary ball mill from high purity elemental powders. Evolution of non-equilibrium solid solutions of ?-Fe[Si,(Al, B, Cr)] with a nanocrystalline structure was accompanied by the introduction of a large number of dislocation defects in the course of the milling process. Fe sites get substituted by Si and M (M = Al, B, Cr) atoms during the milling process. The structural change and the resulting disorder are reflected in the changes in the lattice parameter and average magnetic moment of the powders milled for various time periods. The effective magnetic anisotropy increases linearly with the milling time. An increase in coercivity with increasing milling time was observed which could be attributed to the introduction of dislocations and the reduction in the powder particle size during milling. The presence of dislocations and grain boundaries ...

2008-08-21

361

The Howard Hughes Medical Institute cassette for storage phosphor plates  

Energy Technology Data Exchange (ETDEWEB)

New cassettes for 201 mm{times}252 mm (8{double_prime}{times}10{double_prime}) and 201 mm{times}400 mm (8{double_prime}{times}15.75{double_prime}) storage phosphor plates have been developed at the Synchrotron Resource of the Howard Hughes Medical Institute. The purpose for this work was mainly twofold. Firstly, to diminish the number of manual operations when putting the storage phosphor plate into the cassette or when extracting it from the cassette. Secondly, to render such a cassette much lighter than the former metal cassette previously in use. These two goals were achieved by making new cassettes that are operated as one piece instead of two or three independent parts as with the former systems. The cassettes have been extensively tested and found to be very useful.

1994-03-01

362

Synthesis and characterization of new biopolymeric microcapsules containing DEHPA-?TOPO extractants for separation of uranium from phosphoric acid solutions  

British Library Electronic Table of Contents (United Kingdom)

A novel microcapsule adsorbent for separation of uranium from phosphoric acid solutions was developed by immobilizing the di(2-ethylhexyl) phosphoric acid-?trioctyl phosphine oxide extractants in the polymeric matrix of calcium alginate. Physical characterization of the microcapsules was accomplished by scanning electron microscopy and thermogravimetric techniques. Equilibrium experiments revealed that both ion exchange and solvent extraction mechanisms were involved in the adsorption of Formula Not Shown ions, but the latter prevailed in a wider range of acid concentration. According to the results of kinetics study, at low acidity level, the rate controlling step was slow chemical reaction of Formula Not Shown ions with the microdroplets of extractant, whereas it changed to intraparticle...

2011-01-01

363

Luminescence properties of thallium crystal phosphors and their use in determining microgram quantities of thallium  

Energy Technology Data Exchange (ETDEWEB)

The preparation and luminescence properties of crystal phosphors based on alkali metal iodide and calcium oxide substrates were studied. The highest luminescence intensities were achieved with iodide substrates at 200/sup 0/ and with the calcium oxide substrate at 800/sup 0/. The calibration graphs were linear in the thallium concentration ranges 0.03-5.0 and 0.1-2.0 mu g using sodium and potassium oxides, respectively, and in the range 0.05-5 mu g using cesium iodide and calcium oxide. A method is proposed for the determination of down to 3 x 10/sup -4/% thallium in rocks, using a crystal phosphor with sodium iodide substrate.

1986-02-01

364

Luminescence properties of Ca- and Yb-codoped SiAlON phosphors  

International Nuclear Information System (INIS)

Luminescence properties of SiAlON phosphors codoped with Ca and Yb were investigated by changing the host lattice composition. These modifications of the host lattice were obtained by replacing Si-N bonds by Al-N and Al-O bonds. Their photoluminescence (PL) and cathodoluminescence (CL) properties were measured and compared with each other. PL allows observing the influence of the host lattice modifications by measuring wider areas. CL can excite all luminescent centers, in particular the UV luminescence centers, even if their amount is small. Thus, two additional peaks in the ultraviolet and infrared regions were observed in CL, which is not observed by PL. This work suggests that the combination of PL and CL gives more understanding about the luminescence of SiAlON phosphors, in particular the role of the secondary phases on their properties.

2008-01-15

365

Luminescence and x-ray absorption measurements of persistent SrAl2O4:Eu,Dy powders: Evidence for valence state changes  

Science.gov (United States)

The development of new efficient afterglow phosphors is currently hampered by a limited understanding of the persistent luminescence mechanism. Radioluminescence (RL) and x-ray absorption measurements on the persistent phosphor SrAl2O4:Eu,Dy were combined to reveal possible valence state changes for the rare earth (co)dopants. Traps in the phosphor material are quickly filled when exposing thermally emptied SrAl2O4:Eu,Dy powder to x rays. On the same time scale a partial oxidation of Eu2+ to Eu3+ is observed by x-ray absorption near-edge spectroscopy (XANES), while for the trivalent dysprosium the valence state remains unchanged. The impact of these observations on the recently proposed models for persistent luminescence is discussed.

2011-08-01

366

Experimental Investigations into Phosphoric Acid Adsorption on Platinum Catalysts in a High Temperature PEM FuelCell  

British Library Electronic Table of Contents (United Kingdom)

Abstract Dynamic testing of a phosphoric acid-based high temperature PEM fuel cell shows a peculiar phenomenon. A certain current loss is observed after temperature cycling at constant voltage. This loss is incidentally recovered by applying a cell voltage spike to open circuit voltage. Experimental investigations into temperature, cell voltage, and ageing effects show that this phenomenon might occur due to the orientation of the adsorbed phosphate species on the platinum catalyst surface. Along with some supporting literature and experimental results, a hypothesis is presented in order to explain this occurrence. Phosphoric acid adsorption hysteresis on platinum catalyst due to temperature cycling could cause the temporary cell current loss. Electrode potential-dependent molecule symmetr...

2011-01-01

367

Biosorption of Acid Blue 25 by unmodified and CPC-modified biomass of Penicillium YW01: Kinetic study, equilibrium isotherm and FTIR analysis  

British Library Electronic Table of Contents (United Kingdom)

The main objective of this work was to investigate the biosorption performance of unmodified and Cetylpyridinium chloride (CPC)-modified biomass of Penicillium YW 01 for Acid Blue 25 (AB 25). Maximum biosorption capacity of AB 25 onto CPC-modified biosorbent was 118.48mgg^-^1 under phosphoric-phosphate buffer with initial dye concentration of 200mgL^-^1 at 30^oC. The biosorption pattern of AB 25 onto unmodified biosorbent in aqueous solution and phosphoric-phosphate buffer was well fitted with both Langmuir and Freundlich isotherm models. While the equilibrium data of CPC-modified biosorbent in aqueous solution and phosphoric-phosphate buffer failed to fit the Freundlich isotherm model, indicating the monolayer biosorption formed onto CPC-modified biosorbent. The values of initial biosorpt...

2011-01-01

368

The role of surfactant in synthesis of magnetic nanocrystalline powder of NiFe2O4 by sol-gel auto-combustion method  

British Library Electronic Table of Contents (United Kingdom)

In this work, a new sol-gel auto-combustion method has been performed to synthesize single phase nickel ferrite nanocrystalline powders by using n-cetyltrimethylammonium bromide, as a cationic surfactant. The gels were prepared from ferric and nickel nitrates and citric acid. Ammonia was used as pH adjusting agent as well. The effects of the surfactant on the after combustion calcination process and the reduction of the resulting powder crystallite size which affects the magnetic properties of the material were investigated by XRD and DTA/TGA techniques. The results showed that the ignition of the gels in air have a self-propagating behavior. Addition of surfactant to the starting solution affected the crystallite size of the synthesized powders and their phase constitution. The crystallit...

2008-01-01

369

Microstructure analysis of nanocrystalline powders by X-ray diffraction  

International Nuclear Information System (INIS)

The use of X-ray diffraction line profile analysis for the study of nanocrystalline powders is described. The fundamentals of the theory are presented in terms of crystallite/domain size, size distribution, lattice distortion, dislocations density and stacking faults. Line profile parameters and the methods of pattern fitting introduced to overcome the diffraction-line overlap problem are discussed. The approaches based of the integral breadth of the measured line profiles and the Fourier method are discussed. In addition, simplified approaches are also commented. Representative examples are selected to illustrate various cases of microstructure, such as nanomaterials with strain-free spherical nano crystallites, strain-free crystallites with anisotropic crystallite shape, anisotropic crystallites with microstrains and spherical crystallites with dislocation densities and crystallite size distributions. (author)

2001-09-23

370

Magnetic properties of Fe-Co-Mo-Cu-B nanocrystalline ribbons with stressing surfaces  

British Library Electronic Table of Contents (United Kingdom)

Magnetic properties of Fe-Co-Mo-Cu-B alloy system with Co up to 26at.% were investigated. After proper thermal treatment, the nanocrystalline grain remains tiny, the density hardly increases, but the room-temperature saturation attains 1.5T mainly due to a high enough Curie temperature. The generally observed slant hysteresis loops point to ribbon surfaces, which stress the ribbon interior and induce a specific magnetoelastic contribution to hard-ribbon-axis magnetic anisotropy even after vacuum annealing. The effect does not come from cobalt but rather from the lack of silicon. Partial removal of the surfaces resulted in a decrease of the loop tilt.

2011-01-01

371

Features of local atomic structure of nanocrystalline disordered Fe-M (M=Ge, Sn, Al, Si) alloys: EXAFS-study  

International Nuclear Information System (INIS)

The EXAFS-study (Fe, Sn and Ge K-edges) of disordered by mechanical activation binary supersaturated nanocrystalline solid solutions Fe-Al, Fe-Ge, Fe-Sn and Fe-Si is presented. The EXAFS-spectra are processed by solving the inverse binary problem, using the EXAFS-spectrum of the Fe K-edge only or combining the EXAFS-spectra on two K-edges, Fe and Ge or Fe and Sn. The parameters of partial correlation functions indicate chemical short-range ordering, high local static distortions in the lattice, increasing with metalloid content. The macrostructure of other type is forming through an initial, 'local' stage within the bcc lattice.

2007-05-21

372

Effect of alumina incorporation on restricting grain growth of nanocrystalline tin(IV) oxide  

British Library Electronic Table of Contents (United Kingdom)

In this project, nanocrystalline SnO2 powders were successfully prepared by (a) citrate sol-gel and (b) direct precipitation methods. Powders were characterized using thermal analysis techniques (DTA-TG-DSC), X-ray powder Diffraction (XRD), surface area (BET) and electrical conductivity measurements. XRD patterns showed the presence of the cassiterite structure. SnO2 particles, prepared through sol-gel method exhibit crystallite sizes in the range from 3.1 to 22.3 nm when the gel is heat treated at different temperatures up to 900?C. SnO2 nanocrystallites prepared by the precipitation method are comparatively larger in size. The higher specific surface area was obtained for the powder prepared using sol-gel method and the obtained average grain size (d) is relatively large compared with th...

2010-01-01

373

Bulk amorphous and nanocrystalline Al83Fe17 alloys prepared by consolidation of mechanically alloyed amorphous powder  

British Library Electronic Table of Contents (United Kingdom)

In the present work, bulk amorphous and nanocrystalline Al83Fe17 alloys were obtained by consolidation of mechanically alloyed powders. Mechanical alloying of Al-17% Fe powder mixture yielded powder with an amorphous structure. Thermal behaviour of the milling product was examined using differential scanning calorimetry. This investigation revealed that the amorphous phase crystallised above 380^oC. The amorphous powder was compacted under a pressure of 7.7GPa in different conditions: at 380^oC for 600s and at 1000^oC for 180s. Structural investigations of the bulk material revealed that the amorphous structure was retained after consolidation process applied at 380^oC. Compaction under high pressure at 1000^oC caused crystallisation of the amorphous phase and appearance of metastable nano...

2010-01-01

374

A novel single-step synthesis of N-doped TiO"2 via a sonochemical method  

British Library Electronic Table of Contents (United Kingdom)

A novel single-step synthetic method for the preparation of anatase N-doped TiO"2 nanocrystalline at low temperature has been devoleped. The N-doped anatase TiO"2 nanoparticles were synthesized by sonication of the solution of tetraisopropyl titanium and urea in water and isopropyl alcohol at 80^oC for 150min. The as-prepared sample was characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and UV-vis absorption spectrum. The product structure depends on the reaction temperature and reaction time. The photocatalytic activity of the as-prepared photocatalyst was evaluated via the photodegradation of an azo dye direct sky blue 5B. The results show that the N-doped TiO"2 nanocrystalline prepared via sonication exhibit an excellent photocatalytic...

2011-01-01

375

Red-shift of emission wavelength caused by reabsorption mechanism of europium activated Ca-#alpha#-SiAlON ceramic phosphors  

International Nuclear Information System (INIS)

The optical properties of divalent europium activated Ca-#alpha#-SiAlON were investigated and the excitation and emission processes were discussed. The emission wavelength is influenced by the activator concentration of Eu more than the codopant concentration of Ca, in case of the same matrix composition of #alpha#-SiAlON. The red-shift of emission increases when the concentration of Eu increases. In addition, it was revealed that the red-shift of emission would be caused by the construction of the package of optical device. The correlated color temperature becomes low by the red-shift for the white light-emitting diode (LED) lamp using Ca-#alpha#-SiAlON:Eu phosphor when the phosphor powder concentration increases in the transparent resin which coats the primary light source of a blue LED die. The additional red-shift can be observed when the excessive amount of phosphor coating is intentionally poured to the white LED ...

2007-10-01

376

Phosphorous adsorption and precipitation in a permeable reactive wall: Applications for wastewater disposal systems  

Energy Technology Data Exchange (ETDEWEB)

A permeable reactive mixture has been developed using low cost, readily available materials that is capable of providing effective, long-term phosphorous treatment in areas impacted by on-land wastewater disposal. The reactive mixture creates a geochemical environment suitable for P-attenuation by both adsorption and precipitation reactions. Potential benefits include significant reductions in phosphorous loading to receiving groundwater and surface water systems, and the accumulation of P-mass in a finite and accessible volume of material. The mixture may be applied as a component within surface treatment systems or in subsurface applications such as horizontal or vertical permeable reactive walls. The mixture averaged > 90% treatment efficiency over 3.6 years of continuous-flow laboratory column experiments. The mixture was further evaluated at the pilot-scale to treat municipal wastewater, and the field-scale to treat a well-characterized ...

1997-12-31

377

A Comparison of intra-oral digital imaging modalities: Charged Couple Device versus Storage Phosphor Plate  

UK PubMed Central (United Kingdom)

BackgroundThis in vitro study was conducted to compare the accuracy of two digital image receptors in identifying the location of tip of a fine endodontic file and radiographic apex...Full Text Available

2010-11-01

378

Luminescent properties of Eu3+-activated Sr3B2SiO8: A red-emitting phosphor for white light-emitting diodes  

International Nuclear Information System (INIS)

Single-phased Sr3B2SiO8:Eu3+ phosphor was prepared by a solid-state method at 1020 oC. The luminescence spectra showed that Sr3B2SiO8:Eu3+ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr3B2SiO8:Eu3+ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive 5D0#->#7F2 transition of Eu3+. The luminescence intensity of Sr3B2SiO8:Eu3+ at 611 and 620 nm reached the maximum when the doping content of Eu3+ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr3B2SiO8:Eu3+ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes. - Highlights: ? Sr3B2SiO8:Eu3+ was synthesized using solid-state reaction method for the first time. ? The phosphor can be efficiently excited by the ...

2011-07-01

379

Structural relaxation and crystallization in the Fe-Cr-Si-B and Fe-Cu-Cr-Si-B amorphous alloys  

International Nuclear Information System (INIS)

Structural relaxation, crystallization and optimisation processes in soft magnetic amorphous alloys based on iron are examined by applying different experimental techniques: X-ray diffraction analysis, high-resolution electron microscopy, measurements of magnetic and electric properties (permeability, after-effect resistivity). The presented results are discussed in terms of annealing out of microvoids, formation of nanocrystalline phase and changes of effective magnetostriction constant. (author)

2001-09-23

380

Molecular dynamics simulation of nanoctrystalline nickel: structure and mechanical properties  

Energy Technology Data Exchange (ETDEWEB)

Molecular dynamics computer simulations of a dense nanocrystalline Nickel sample are performed on the parallel Cray T3 (EPFL-Lausanne). The sample contains 50 grains with an average size of 3 nm. By perturbing the relaxed configuration elastic and plastic properties are studied. (author) 1 fig., 1 ref.

1996-10-01

381

Formation of iron oxides during mechanical activation in water  

International Nuclear Information System (INIS)

It has been shown that mechanical milling of iron in water results in formation of nanocrystalline magnetite Fe3O4 with an average particle size of 0.6 ?m, saturation magnetization of 77 Am2/kg and coercivity of ?150 A/cm. Along with magnetite, an antiferromagnetic Fe-O phase (?10 wt%), which is an aggregate of small iron-oxygen clusters forms.

2007-05-21

382

Vibration characteristics of SMA composite beams with different boundary conditions  

Energy Technology Data Exchange (ETDEWEB)

Recently, the development of shape memory alloy (SMA) actuators, in the forms of wire, thin film and stent have been found increasingly in the fields of materials science and smart structures and engineering. The increase in attraction for using these materials is due to their many unique materials, mechanical, thermal and thermal-mechanical properties, which in turn, evolve their subsequent shape memory, pseudo-elasticity and super-elasticity properties. In this paper, a common type of SMA actuator, Nitinol wires, were embedded into advanced composite structures to modulate the structural dynamic responses, in terms of natural frequency and damping ratio by using its shape memory and pseudo-elastic properties. A simple theoretical model is introduced to estimate the natural frequency of the structures before and after actuating the embedded SMA wires. The damping ratios of different SMA composite beams were measured through experimental ...

2002-12-15

383

Unconventional systems for lunar base power generation and storage  

International Nuclear Information System (INIS)

Recent advances in thin film solar photovoltaic converters (PV's) can furnish multimegawatt power levels during lunar daylight periods with only modest mass requirements. The extended duration of lunar night (ca. 354 hr) and the high specific mass of earth-imported energy storage systems (regenerative fuel cells, batteries, etc.) render PV plus import storage power systems non-competitive with nuclear power plants for lunar bases. However, power storage or generation methods which can be constructed using primarily lunar materials, used either alone or with lightweight PV's, can be attractive alternatives to nuclear power. Three separate generic systems which can provide favorable low import mass goals have been identified and studied. These are: gravitational energy generation using lunar soil, thermal energy storage using basalt rock or glass, and electrochemical storage using lunar derived electrodes or fuels. Design, structural and ...

1990-08-12

384

Synchrotron PES and NEXAFS studies of self-assembled aromatic thiol monolayers on Au(1 1 1)  

Energy Technology Data Exchange (ETDEWEB)

Self-assembled monolayers (SAMs) on various metal, semiconductor or insulator substrates can be easily modified with specific functional groups of interest and have promising applications in surface wetting (hydrophobic/hydrophilic modification), tribology, corrosion protection, sensor electrodes modification, molecular and biomolecular recognition, protein adsorption, cell adhesion, and molecular- or organic-electronic device fabrications. In this paper, we highlight recent progress in the development of SAMs on solid substrates as well as their practical applications, with particular emphasis on the characterization of self-assembled aromatic thiol monolayers with different functional groups on Au(1 1 1) using synchrotron-based photoemission spectroscopy and near-edge X-ray absorption fine structure measurements. The SAM-related molecular orientation, electronic structures, and chemical bonding are presented. Using copper(II) phthalocyanine as a model system, we address the ...

2009-05-15

385

Surface morphology of thin lysozyme films produced by matrix-assisted pulsed laser evaporation (MAPLE)  

Energy Technology Data Exchange (ETDEWEB)

Thin films of the protein, lysozyme, have been deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. Frozen targets of 0.3-1.0 wt.% lysozyme dissolved in ultrapure water were irradiated by laser light at 355 nm with a fluence of 2 J/cm{sup 2}. The surface quality of the thin lysozyme films of different thickness deposited on 7 mm x 7 mm Si-<1 0 0>-wafers was investigated with scanning electron microscopy and atomic force microscopy. Already at comparatively low thickness, {approx}20 nm, the substrate is covered by intact lysozyme molecules and fragments. The concentration of lysozyme in the ice matrix apparently does not play any significant role for the morphology of the film. The morphology obtained with MAPLE has been compared with results for direct laser irradiation of a pressed lysozyme sample (i.e. pulsed laser deposition (PLD))

2007-12-15

386

Sulfonated poly(ether ether ketone) based composite membranes for nanofiltration of acidic and alkaline media  

British Library Electronic Table of Contents (United Kingdom)

Several thin film composite nanofiltration membranes have been prepared by spin coating a sulfonated poly(ether ether ketone) solution on a polyethersulfone support, followed by thermal treatment. The most optimal developed nanofiltration membrane shows a clean water permeance of ~4.5Lm^-^2h^-^1bar^-^1 and a molecular weight cut off (MWCO) of ~500gmol^-^1. No irreversible changes in membrane performance have been observed after prolonged exposure (up to several weeks) of this membrane to solutions with a pH in the range 0-14. Compared to Desal-5-DK, the developed membrane displays a similar water permeance and a higher NaCl retention. In comparison to commercially available pH stable membranes, MPF-34 and NP030P, it reveals a higher water permeance. Permeance and MWCO analysis at varying p...

2011-01-01

387

Study of heat rejection mechanism of a direct-injection diesel engine. 1st Report. Characteristics of local heat flux; Study of heat reinjection mechanism of a direct-injection diesel engine. 1. Characteristics of local heat flux  

Energy Technology Data Exchange (ETDEWEB)

Experimental investigations are being conducted on a single-cylinder direct-injection diesel engine to examine the transient heat transfer characteristics. Transient temperature data from stationary locations in the piston and cylinder head were used as the basis for determining the transient heat flux rates. Transient surface temperature was measured using the thin film thermocouples. At first, the transient heat flux rates calculated from the analysis method used in this paper were compared with the results from FEM. The results showed good agreement. Using this analysis method, the transient heat flux rates were calculated. The tests were performed at 1200 rpm with constant air flow. The parameters that were varied included the fuel rate and injection timing. Based on these results, the present paper discusses the mechanism of heat rejection in a direct-injection diesel engine. 8 refs., 16 figs.

1997-09-25

388

Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers  

International Nuclear Information System (INIS)

We have developed a chemical process for incorporating copper into indium gallium selenide layers with the goal of creating a precursor structure for the formation of copper indium gallium diselenide (CIGS) photovoltaic absorbers. Stylus profilometry, EDX, Raman spectroscopy, XRD and SIMS measurements show that when indium gallium selenide layers are immersed in a hot copper chloride solution, copper is incorporated as copper selenide with no increase in the thickness of the layers. Further measurements show that annealing this precursor structure in the presence of selenium results in the formation of CIGS and that the supply of selenium during the annealing process has a strong effect on the morphology and preferred orientation of these layers. When the supply of Se during annealing begins only once the substrate temperature reaches ? 400 deg. C , the resulting CIGS layers are smoother and have more pronounced preferred orientation than when Se is supplied throughout the entire ...

2009-02-02

389

Stress-induced amorphization at moving crack tips in NiTi.  

Energy Technology Data Exchange (ETDEWEB)

In situ fracture studies on thin-film NiTi intermetallic compounds have been carried out in the high-voltage electron microscope at Argonne National Laboratory. Local stress-induced amorphization of regions directly in front of moving crack tips has been observed under tensile loading conditions. The stress-induced amorphization at crack tips exhibits a temperature dependence similar to that of ion-induced amorphization of NiTi. The upper limiting temperature for stress-induced amorphization is the same as that for ion-induced amorphization of crystalline NiTi and for amorphous phase formation during ion-beam mixing of Ni and Ti multilayer specimens. This upper limiting temperature of 600K is also the lowest temperature at which stress-induced amorphous phase crystallizes during isothermal annealing. This isothermal crystallization temperature is nearly 200K less than the kinetic crystallization temperature during heating of unrelaxed NiTi glasses formed by rapid ...

1998-01-29

390

Some computer simulations of semiconductor thin film growth and strain relaxation in a unified atomistic and kinetic model  

Energy Technology Data Exchange (ETDEWEB)

An overview is provided of an evolving atomistic and kinetic model of semiconductor growth that unifies the main features of strain relaxation in low and high lattice misfit heteroepitaxy. The model reveals a kinetic pathway for dislocation formation during growth with little or no energy cost at low misfits, thus providing a way out of the longstanding dilemma of too high dislocation nucleation energies predicted by classical theories of the equilibrium behavior of a fixed number of particles at low misfits. The essential kinetic process underlying the model are identified on the basis of comparison of the predictions of kinetic Monte-Carlo simulations of growth with real-time or in-situ data obtained in such experiments as reflection high-energy electron diffraction (RHEED) and scanning probe microscopy (SPM). Relative significance of these atomistic kinetic processes is shown to naturally lead to strain relaxation via defect initiation at low misfits while maintaining smooth surface ...

1996-12-31

391

Silicon front-end technology -- Materials processing and modeling. Materials Research Society symposium proceedings Volume 532  

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; extended defects and transient enhanced diffusion; impurities and ...

1998-07-01

392

SEM and TEM investigations of recovery and recrystallization in technically pure molybdenum; REM- und TEM-Untersuchungen von Erholung und Rekristallisation in technisch reinem Molybdaen  

Energy Technology Data Exchange (ETDEWEB)

Beside traditional applications of refractory metals, e.g. in high temperature furnace construction, lighting or glass industry, one of the most important molybdenum products nowadays are large plates which are frequently used as targets for the sputtering of molybdenum layers in thin-film transistor liquid crystal displays. For the hot rolling of the sintered pre-material, the control over the recovery and recrystallization behavior is of particular importance. Molybdenum tends to a very recovery controlled behavior during hot deformation, at which the dislocations arrange into subcell boundaries instantaneously. These pronounced recovery processes seem to consume a large amount of the stored deformation energy for the actual recrystallization. On the other hand, recovery provides the future recrystallization nuclei. For a comprehensive characterization of these microstructural processes, electron microscopy appears to be the most proper means. The aim of this ...

2011-07-15

393

Renewable energy technology from underpinning physics to engineering application  

International Nuclear Information System (INIS)

The UK Energy Research Centre (UKERC) in it's submission to the DTI's 2006 Energy Review reminded us that the 'UK has abundant wind, wave and tidal resources available; its mild climate lends itself to bio-energy production, and solar radiation levels are sufficient to sustain a viable solar industry'. These technologies are at different stages of development but they all draw on basic and applied Science and Engineering. The paper will briefly review the renewable energy technologies and their potential for contributing to a sustainable energy supply. Three research topics will be highlighted that bridge the gap between the physics underpinning the energy conversion, and the engineering aspects of development and deployment; all three are highly relevant to the Government's programme on micro-generation. Two are these are taken from field of thin film photovoltaics (PV), one related to novel device development and the other to a measurement ...

2008-03-01

394

Properties of duplex coatings prepared by plasma nitriding and PVD Ti-C:H deposition on X20Cr13 ferritic stainless steel  

Energy Technology Data Exchange (ETDEWEB)

Duplex-coating procedures consisting of plasma nitriding and Me-C:H hard coating lead to an improved performance of the devices because the Me-C:H coating is supported by the nitrided phase and, therefore, the `eggshell-effect` is avoided. Furthermore, this support leads to a higher load-bearing capacity of the thin film. Two standard procedures (classical high-pressure plasma nitriding and unbalanced magnetron sputtering of Ti-C:H) were performed subsequently to prepare the duplex coatings on X20Cr13 ferritic stainless steel. The corrosion resistance of the steel could be improved by nitriding at 450 C compared to the untreated ferritic substrate. The roughness is determined by the nitriding step. The weakest point of the coating is the transition zone between the nitrided and the untreated substrate and not the interface between the Ti-C:H coating and the nitrided substrate as shown by the Rockwell and scratch tests. The adhesion of the ...

1998-06-08

395

Properties of carbon films prepared by magnetron sputtering of woodceramics; Uddo seramikkusu kara seikeishita magunetoronsu pattaringu ni yoru tansomaku no tokusei  

Energy Technology Data Exchange (ETDEWEB)

Highly resistant, high-transmittance woodceramic thin films were prepared using rf magnetron sputtering of a woodceramic disk in argon plasma. A film series was deposited based on substrate temperature, which was varied from 50 to 500 degree C. The film's electrical and optical properties depended on substrate temperature. Films deposited below 300 degree C were insulative, {rho}>10{sup 10} {omega} {center_dot} cm. Films deposited at 50 degree C had a density of 1.9-2.2 g/cm{sup 3} comparable to that of single crystal graphite. Below 200 degree C, films had higher transmittance than typical DLC films in the visible and infrared region. Infrared C-H absorption spectrum was observed by Ft-IR and there exist two types of bonding corresponding to sp{sup 2} or SP{sup 3}. (author)

1999-08-01

396

Process development for remote-handled mixed-waste treatment  

Energy Technology Data Exchange (ETDEWEB)

The Oak Ridge National Laboratory (ORNL) is developing a treatment process for remote-handled (RH) liquid transuranic mixed waste governed by the concept of minimizing the volume of waste requiring disposal. This task is to be accomplished by decontaminating the bulk components so the process effluent can be disposed with less risk and expense. Practical processes have been demonstrated on the laboratory scale for removing cesium 137 and strontium 90 isotopes from the waste, generating a concentrated waste volume, and rendering the bulk of the waste nearly radiation free for downstream processing. The process is projected to give decontamination factors of 10{sup 4} for cesium and 10{sup 3} for strontium. Because of the extent of decontamination, downstream processing will be contact handled. The transuranic, radioactive fraction of the mixed waste stream will be solidified using a thin-film evaporator and/or microwave solidification system. Resultant solidified ...

1990-01-01

397

Preparation of nanostructure Ni doped CdO thin films by sol gel spin coating method  

British Library Electronic Table of Contents (United Kingdom)

The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The Eg values of the CdO films were found to be in the range of 2.26?2.60?eV. The Eg values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size o...

2011-01-01

398

Preparation of TiO2/NiO composite particles and their applications in dye-sensitized solar cells  

British Library Electronic Table of Contents (United Kingdom)

This study investigates the applicability of n-type TiO2 and p-type NiO on the FTO-glass (Fluorine doped tin oxide, SnO2:F) substrate of the working electrode in a dye-sensitized solar cell (DSSC). The working electrode was designed and fabricated by depositing a film of TiO2/NiO composite particles, which were prepared by mixing the Ni powder with TiO2 particles using dry mixing method, on a FTO-glass substrate using a spin coating process. The working electrode was then immersed in the solution of N-719 (Ruthenium) dye at a temperature of 70degreeC for 6h. Moreover, a thin film of platinum (Pt) was deposited on the FTO-glass substrate of the counter electrode using an E-beam evaporator. Finally, the DSSC was assembled, and the short-circuit photocurrent, the open-circuit photovoltage and...

2011-01-01

399

Plasma nitriding of Al 99.5  

International Nuclear Information System (INIS)

Aluminium nitride (AlN) is a very interesting ceramic because of its combination of properties such as high thermal stability, high hardness and an unusual combination of high thermal and low electrical conductivity. But it is very difficulty to obtain an AlN layer on the aluminium substrates by thermochemical nitriding process. Since a thin film of aluminium oxide existing on the surface of every aluminium substrate prevents the nitrogen atoms from diffusing into the aluminium lattice. However, it is possible to sputter the oxide film away from the aluminium surface in a glow discharge with the use of plasma nitriding technique and to allow the formation of AlN layer on the aluminium bulk. In the present work specimen of aluminium Al 99.5 has been plasma nitrided in a modified plasma nitriding unit, in which a diffusion pump was used to obtain an especially low partial pressure of oxygen in the vauum chamber. The sputter-cleaning prior to the ...

400

Organic against inorganic electrodes grown onto polymer substrates for flexible organic electronics applications  

Energy Technology Data Exchange (ETDEWEB)

One of the most challenging topics in the area of organic electronic devices is the growth of transparent electrodes onto flexible polymeric substrates that will be characterized by enhanced conductivity in combination with high optical transparency. An essential aspect for these materials is their synthesis and/or microstructure which define the transparency, the stability and the interfacial chemistry which in turn determine the performance and stability of the organic electronic devices, such as organic light emitting diodes, organic photovoltaics, etc. In this work, we will discuss the latest advances in the growth of organic (e.g. PEDOT:PSS) and inorganic (e.g. zinc oxide-ZnO, indium tin oxide-ITO) conductive materials and their deposition onto flexible polymeric substrates. We will compare the optical, structural, nano-mechanical and nano-topographical properties of the inorganic and organic materials and we investigate the effect of their structure on their properties and ...

2009-12-15

401

On the validity of the classical hydrodynamic lubrication theory applied to squeeze film dampers  

Energy Technology Data Exchange (ETDEWEB)

Squeeze film dampers (SFD) are devices utilized to control vibrations of the shafts of high-speed rotating machinery. The SFD - squirrel cage combination is probably the most used system for tuning the stiffness and damping of the supports for rotors installed on ball bearings. Squeeze film dampers are essentially hydrodynamic bearings which contain the ball bearings housings of ball-bearings supported shafts. Consequently, the oil film within the SFD are influenced only by the precession and nutation of the shaft, that is the flow of the oil within the damper is not directly influenced by the spin of the rotor. However, in the classical theory, the flow in the thin film is also governed by the Reynolds equation. In this paper, some of the limits of the classical theory of the SFD are discussed and theoretical and experimental studies, which illustrate the ideas presented herein, are presented as well. The orbits of an unbalanced rotor that is ...

2010-08-15

402

Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies  

Energy Technology Data Exchange (ETDEWEB)

The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native oxide--hydrocarbon layer during the Ni/GaAs, Pd/GaAs, and Pt/GaAs reactions is also investigated. Only the Ni/GaAs reaction is ...

1987-03-01

403

Microstructural observation of focused ion beam modification of Ni silicides/Si thin films  

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the precipitation is indicated.

1996-12-02

404

Metrological applications of X-ray waveguide thin film structures in X-ray reflectometry and diffraction  

International Nuclear Information System (INIS)

The effect of resonance, observed in X-ray waveguide layered structures in a characteristic way influences the scattering properties of the films. It is well known that the resonant region in the reflectivity shows a series of minima, usually very deep and extremely narrow. The positions and depths of the minima depend only on X-ray waveguide and quasi X-ray waveguide film structural properties, on the X-ray wavelength and on the incident beam divergence. In the present work we propose and discuss the application of the X-ray waveguide and quasi X-ray waveguide film structures as a tools to experimental evaluation of some quantities related to X-ray reflectometric and diffractometric measurements, like the beam divergence, wavelength, or angular distance. Examples of application of X-ray waveguide as an excellent tool for estimate the effective beam divergence are shown. Properties of the X-ray waveguide elements as a handy wavelength or angular calibration standard are also mentioned. ...

2001-09-23

405

Magnetic microstructure of candidates for epitaxial dual Heusler magnetic tunnel junctions  

Energy Technology Data Exchange (ETDEWEB)

Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co{sub 2}MnSi (CMS) and Co{sub 2}FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO{sub 2}/V/CMS/MgO/CFS and SiO{sub 2}/V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co{sub 2}MnSi.

2009-05-15

406

Magnetic and structural investigation of magnetic thin films with obliquely deposited underlayers  

CERN Document Server

An in-plane uniaxial magnetic anisotropy has been observed in thin Co films normally deposited onto obliquely sputtered Ta and Pt underlayers. Associated with this anisotropy is an augmented easy axis coercivity. The in-plane easy axis is, in most cases, perpendicular to the incident deposition plane. Microstructural results indicate that grains are well connected along the magnetic easy axis but are separated by long continuous voids along the hard axis, which is ascribed to a geometric shadowing effect due to the oblique incidence deposition of the underlayer. Hence, the magnetic anisotropy mimics the film growth anisotropy. It is therefore believed that the observed magnetic properties are due to magnetostatic shape anisotropy effects. In-plane coercivity and anisotropy field are shown to increase with underlayer deposition angle, underlayer thickness and magnetic layer thickness. The choice of capping layer is also observed to dramatically alter the magnetics, as did the sample ...

2002-01-01

407

Liquid waste evaporator operating experience  

Energy Technology Data Exchange (ETDEWEB)

Atomic Energy of Canada Limited (AECL) operates the Waste Treatment Centre (WTC) to treat and immobilize some of the low- level radioactive waste (LLRW) streams at the Chalk River Laboratories (CRL). The WTC at treats low- level radioactive liquid waste by removing the contaminants from the wastewater, concentrating them, and immobilizing them. The fundamental design concept for the WTC is to process the waste streams using forced circulation type liquid waste evaporation (LWE), to solidify the concentrates using thin film evaporator and to discharge the purified effluent into the Ottawa River following verification monitoring. The solidified product drums are stored in existing storage facilities in the CRL. The LWE was installed in the WTC to treat the LLRW. After about four (4) years of design, construction and cold commissioning, the active commissioning of the evaporator process using radioactive waste streams commenced in February 2000. ...

2006-07-01

408

Liquid waste evaporator operating experience  

International Nuclear Information System (INIS)

Atomic Energy of Canada Limited (AECL) operates the Waste Treatment Centre (WTC) to treat and immobilize some of the low- level radioactive waste (LLRW) streams at the Chalk River Laboratories (CRL). The WTC at treats low- level radioactive liquid waste by removing the contaminants from the wastewater, concentrating them, and immobilizing them. The fundamental design concept for the WTC is to process the waste streams using forced circulation type liquid waste evaporation (LWE), to solidify the concentrates using thin film evaporator and to discharge the purified effluent into the Ottawa River following verification monitoring. The solidified product drums are stored in existing storage facilities in the CRL. The LWE was installed in the WTC to treat the LLRW. After about four (4) years of design, construction and cold commissioning, the active commissioning of the evaporator process using radioactive waste streams commenced in February 2000. ...

2005-05-08

409

Linear augmented-plane-wave calculation of the structural properties of bulk Cr, Mo, and W  

International Nuclear Information System (INIS)

A scalar-relativistic procedure for calculating the valence-electron contribution to the total energy of bulk and thin-film solids has been developed and applied to the fcc and bcc phases of the group-VIB transition elements Cr, Mo, and W. This approach, which is based on the linear augmented-plane-wave method and local-density-functional theory, contains no shape approximations for either the charge density or potential. The formulation adopts a rigid-core approximation and incorporates an exact treatment of the core-charge tails that extend beyond the muffin-tin spheres. The application of this procedure to bcc Cr, Mo, and W yields calculated lattice parameters and bulk moduli that are in good (Cr) to excellent (Mo and W) agreement with experiment. The present calculated properties also agree quite well with the results of previous calculations involving a variety of band-structure methods. The calculated fcc-bcc energy difference for Cr, Mo, and W increases in a ...

410

Laser induced local and periodic phase transformations in iron oxide thin films obtained by chemical vapour deposition  

International Nuclear Information System (INIS)

Iron oxide films have been deposited on Si(100) substrates by chemical vapour deposition (CVD) of iron(III) tert-butoxide ([Fe(O "tBu)_3]_2) in the temperature range 350-450 deg. C. The precursor flux and substrate temperature were varied to control the phase composition, average grain size and film thickness. The nature of substrate and deposition temperature markedly influence the morphology and iron-oxygen stoichiometry in the CVD deposits. Phase transformations in iron oxide films were achieved through precise local and periodic heating of the films by interfering laser beams. The interaction of iron oxide films with short laser pulses (Nd:YAG, 355 nm) induced partial transformation of hematite (#alpha#-Fe_2O_3) to magnetite (Fe_3O_4) or magnetite to wuestite (Fe_1_-_xO), respectively. The phase characterization and morphology of the hematite and magnetite films were investigated before and after laser irradiation by X-ray diffractometry, high resolution scanning electron ...

2005-07-15

411

Influence of the substrate coating temperature on the vacuum properties of Ti-Zr-V non-evaporable getter films  

CERN Document Server

Non-evaporable thin film getters of various compositions have been produced by sputtering. Among about 20 materials which have been studied, the lowest activation temperature (about 180 degree C) has been displayed by a Ti-Zr-V coating obtained from a cathode made of intertwisted elemental wires. In order to optimize the vacuum properties of this film various production parameters, including the substrate temperature during coating, have been varied. The films have been characterized by pumping speed measurement, secondary electron microscopy, and X-ray diffraction. It has been found that the substrate coating temperature affects significantly the activation temperature, the pumping speed and the gas surface capacity. The highest pumping speed values, obtained for substrate coating temperatures of 250 degree C and 300 degree C, are clearly correlated with the increased surface roughness and porosity of the Ti-Zr-V film.

2003-01-01

412

Influence of temperature on strength of cemented surrogate nitrate salt waste  

Energy Technology Data Exchange (ETDEWEB)

The Rocky Flats Plant (RFP) generates large volumes of a low level aqueous waste stream high in nitrate salts. The aqueous waste is concentrated by evaporation and then mixed with Portland cement prior to transport and disposal. Planned process upgrades include a new horizontal thin film evaporator. Temperature of brine at discharge end of the new evaporator will be near boiling point. Introduction of hot water to cement can degrade the monolithic waste form. However, the RFP salt waste contains high concentrations of compounds known to retard hydration. This paper discusses impact of introducing high temperature waste to cement. The study evaluated three waste compositions: (1) highest probable nitrate composition, (2) highest probable chloride composition, and (3) current composition. Results showed that compressive strength of final waste form increased with brine temperature, and waste forms from brine at the boiling point exhibited a near ...

1993-01-01

413

Influence of temperature on strength of cemented surrogate nitrate salt waste  

Energy Technology Data Exchange (ETDEWEB)

The Rocky Flats Plant (RFP) generates large volumes of a low level aqueous waste stream high in nitrate salts. The aqueous waste is concentrated by evaporation and then mixed with Portland cement prior to transport and disposal. Planned process upgrades include a new horizontal thin film evaporator. Temperature of brine at discharge end of the new evaporator will be near boiling point. Introduction of hot water to cement can degrade the monolithic waste form. However, the RFP salt waste contains high concentrations of compounds known to retard hydration. This paper discusses impact of introducing high temperature waste to cement. The study evaluated three waste compositions: (1) highest probable nitrate composition, (2) highest probable chloride composition, and (3) current composition. Results showed that compressive strength of final waste form increased with brine temperature, and waste forms from brine at the boiling point exhibited a near ...

1993-03-01

414

Indentation plastic displacement field: Part II. The case of hard films on soft substrates  

Energy Technology Data Exchange (ETDEWEB)

The plastic displacements around Knoop indentations made in hard titanium/aluminum multilayered films on soft aluminum alloy substrates have been studied. Indentations were cross-sectioned and imaged using the focused-ion-beam (FIB) milling and high-resolution scanning electron microscopy (SEM), respectively. The FIB milling method has the advantage of removing material in a localized region without producing mechanical damage to the specimen. The micrographs of the cross-sectioned indentations indicate that most of the plastic deformation around the indentation is dominated by the soft aluminum substrate. There is a very small change in the multilayered film thickness around the indentation{emdash}less than 10{percent}. The plastic deformation of the thin film resembles a membrane being deflected by a localized pressure gradient across the membrane. Stress-induced voids are also observed in the multilayered film, especially in the area around ...

1999-06-01

415

In-plane aligned CeO[sub 2] films grown on amorphous SiO[sub 2] substrates by ion-beam assisted pulsed laser deposition  

Energy Technology Data Exchange (ETDEWEB)

Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.

1994-10-17

416

In situ, real-time RBS measurement of solid state reaction in thin films  

International Nuclear Information System (INIS)

The applicability of in situ, real-time RBS is demonstrated by characterizing the growth of thin Pd_2Si films on Si left angle 111 right angle substrates using isothermal as well as non-isothermal annealing. In contrast to the currently fashionable in situ ramped resistance technique, it is possible to extract the activation energy from a single run with a constant heating rate. The results, which are in excellent agreement with the literature, will be compared for isothermal annealing, fitting an appropriate model for the growth process to data from a single run and a Kissinger-like analysis with different ramp rates. In situ, real-time RBS was also used to study marker motion during CrSi_2 formation in the Si left angle 100 right angle /Pd_2Si/Cr system. It is possible to distinguish between the following mechanisms: (1) CrSi_2 formation via dissociation of the Pd_2Si at the Pd_2Si/Cr interface and subsequent reaction of Pd to form Pd_2Si at the Si/Pd_2Si interface and (2) CrSi_2 ...

1998-04-01

417

Imaging magnetic domain structure in sub-500 nm thin film elements  

Energy Technology Data Exchange (ETDEWEB)

Magnetic imaging in the transmission electron microscope (TEM) has been used to examine submicron elements with the aim of discovering down to what element size complex domain patterns can form. The elements were squares, circles, triangles, and pentagons in the size range 100{endash}500 nm and were made from 36 nm Co films or 8 nm Ni{sub 80}Fe{sub 20} (NiFe) with in-plane magnetization. The magnetic domain structures in these elements were imaged at high resolution using the differential phase contrast imaging mode in a TEM. Nonuniform magnetization structures were seen in the images. Vortices were present at remanence in all shapes of 36-nm-thick Co elements down to 100 nm size and in circular NiFe elements down to 116 nm diameter. Triangular NiFe elements did not have a vortex state at remanence, instead the magnetization curved round within the element but did not achieve complete flux closure. In simulations of square and circular NiFe elements, it was found that defects at the ...

2001-06-01

418

Highly reliable contacts for lead-salt diode lasers  

Energy Technology Data Exchange (ETDEWEB)

In order to improve the long term reliability of lead-salt diode lasers, ohmic contacts of multilayer, thin-film structures consisting of In plus Au, Pt, Ni, and Pd have been studied. Diode lasers of PbSnTe fabricated with a variety of contacts were tested during room-temperature storage and during accelerated aging tests. The results show that contact reliablility can be improved when multiple overlapping films are used. After 4500 h of baking at 60 /sup 0/C, lasers with In-Au-Pd-Au contacts on both sides showed the least resistance increase (10%). For lasers with In-Au-Pt-Au contacts, 1 h of baking at 60 /sup 0/C is equivalent to 2 d storage at room temperature. Extrapolating these results, a 70% increase in contact resistance is expected for this type of laser after 9000 d of storage at room temperture. Our data also suggests that a smaller increase in contact resistance can be expected for lasers fabricated with In-Au-Ni-Au and In-Au-Pd-Au contacts.

1981-02-01

419

Highly ordered thin films of polyheterocycles: A synchrotron radiation study of polypyrrole and polythiophene Langmuir-Blodgett films  

Energy Technology Data Exchange (ETDEWEB)

Langmuir-Blodgett films have been made with 3-n-hexadecylpyrrole and 3-n-octadecylpyrrole monomers and copolymers with unsubstituted pyrrole made by chemical polymerization at the air-water interface on a subphase containing FeCl/sub 3/. Langmuir-Blodgett films consisting of mixtures of stearic acid and alkylsubstituted polythiophenes have also been made as bilayer films. The orientation of single and multilayer films on platinum substrates have been studied by Near Edge X-ray Absorption Fine Structure Spectroscopy which also gives information about charge transfer interactions between the aromatic groups and the metallic substrates. The alkylsubstituted pyrroles form highly ordered two-dimensional structures. FeCl/sub 3/ initiated copolymerization with unsubstituted pyrrole leads to a more disordered system. In the case of polythiophene-stearic acid bilayers, the stearic acid layers are highly ordered. The poly(alkyl thiophene) layers sandwiched between stearic acid layers, on the ...

1988-01-01

420

H2/Ar and vacuum annealing effect of ZnO thin films deposited by RF magnetron sputtering system  

British Library Electronic Table of Contents (United Kingdom)

The properties of ZnO films were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnO films decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnO films increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300degreeC were 2186cm and 798cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnO films annealed in vacuum and H2/Ar ambients at 600degreeC were similar with 0.040cm and 0.035cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnO films annealed in ambient H2/Ar at low temperatures. The average optical transmission was >82%...

2010-01-01

421

Gate-oxide integrity for polysilicon thin-film transistors: a comparative study for ELC, MILC and SPC crystallized active polysilicon layer  

International Nuclear Information System (INIS)

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si films are the main factors that cause enhanced breakdown of SiO_2 films.

2006-01-01

422

Full-potential self-consistent linearized-augmented-plane-wave method for calculating the electronic structure of molecules and surfaces: O_2 molecule  

International Nuclear Information System (INIS)

The linearized-augmented-plane-wave (LAPW) method for thin films is generalized by removing the remaining shape approximation to the potential inside the atomic spheres. A new technique for solving Poisson's equation for a general charge density and potential is described and implemented in the film LAPW method. In the resulting full-potential LAPW method (FLAPW), all contributions to the potential are completely taken into account in the Hamiltonian matrix elements. The accuracy of the method: already well known for clean metal surfaces: is demonstrated for the case of a nearly free (noninteracting) O_2 molecule which is a severe test case of the method because of its large anisotropic charge distribution. Detailed comparisons show that the accuracy of the FLAPW results for O_2 exceeds that of existing state-of-the-art local-density linear-combination-of-atomic-orbitals (LCAO)-type calculations, and that taking the full potential LAPW results ...

423

Flux pinning and critical currents in A-15 superconductors  

Science.gov (United States)

The relationship between processing, microstructure, and properties was studied for A-15 compounds in multifilamentary composites produced by solid-state diffusion and in thin-film samples produced by vapor deposition. Grain sizes of A-15 superconducting compounds were measured by transmission electron microscopy of multifilamentary composites reacted at various temperatures. Critical current densities at 4.2 K and fields up to 6 T were found to be similar for niobium-tin, vanadium-gallium, and vanadium-silicon of the same grain size. Study of the Cu-V-Si phase diagram led to the production of improved multifilamentary vanadium-silicon conductors. The effects of various alloying elements on A-15 layers produced by solid-state diffusion were studied. The most promising new observation was that tantalum can be incorporated into niobium-tin reaction layers, leading to an enhancement of critical currents at high fields. The critical temperature of vapor-deposited, ...

1978-02-01

424

Evaluation of passive films by photo and impedance spectroscopy; Bunkoho oyobi inpidansu ho ni yoru himaku hyoka  

Energy Technology Data Exchange (ETDEWEB)

The passive films formed on iron metal, alloys or stainless steel are extremely thin oxides or hydroxides and possess the properties of high chemical stability in the environment. These films show characteristics interested both electrical as well as electrochemical point of view due to the thin thickness of the films. Auger Electron Spectroscopy, X-ray Photoelectron spectroscopy and so on which are the conventional electrochemical measurement methods or the surface analysis methods are used for the analysis and evaluation of these films, however, at present, the application of research technique focusing the superconductor characteristics of the films are tried. Although, the potential modulation reflection spectroscopy method has merits like possibility of in-situ measurement, high precision, possibility of stable analysis even for extremely thin film and so forth, it has also demerits like difficulty to response the potential modulation of ...

1995-09-20

425

Evaluation of Pd-Ag alloys as electrocatalysts for oxygen reduction reaction  

Energy Technology Data Exchange (ETDEWEB)

Alkaline fuel cells (AFCs) provide a less corrosive environment and can provide higher electrode reaction kinetics than proton exchange membrane fuel cells (PEMFCs). The alkaline media also allows for the replacement of platinum (Pt) based electrocatalysts with non-Pt electrocatalysts. Studies have shown that palladium (Pd) and silver (Ag) form a homogenous solid solution with a face-centred cubic structure within a large range of temperatures. This study described the results of an oxygen reduction reaction (ORR) on lead-silver (Pd-Ag) alloy electrodes in alkaline media. The reaction was compared with Pd and Ag electrodes. The alloys were synthesized as thin films using a sequential electroless deposition of Pd and Ag on stainless steel discs followed by an annealing procedure in an Ar stream. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to characterize catalyst structure, ...

2010-07-01

426

Etching characteristics of high-k dielectric HfO2 thin films in inductively coupled fluorocarbon plasmas  

Science.gov (United States)

Inductively coupled fluorocarbon (CF4/Ar and C4F8/Ar) plasmas were used to etch HfO2, which is a promising high-dielectric-constant material for the gate of complementary metal-oxide-semiconductor devices. The etch rates of HfO2 in CF4/Ar plasmas exceeded those in C4F8/Ar plasmas. The tendency for etch rates to become higher in fluorine-rich (high F/C ratio) conditions indicates that HfO2 can be chemically etched by fluorine-containing species. In C4F8/Ar plasmas with a high Ar dilution ratio, the etch rate of HfO2 increased with increasing bias power. The etch rate of Si, however, decreasd with bias power, suggesting that the deposition of carbon-containing species increased with increasing the power and inhibited the etching of Si. The HfO2/Si selectivity monotonically increased with increasing power, then became more than 5 at the highest tested bias power. The carbon-containing species to inhibit etching of Si play an important role in enhancing the HfO2/Si selectivity in C4F8/Ar ...

2005-11-01

427

Erosion of a model rosin-based marine antifouling paint binder as studied with quartz crystal microbalance with dissipation monitoring (QCM-D) and ellipsometry  

British Library Electronic Table of Contents (United Kingdom)

In this study two surface sensitive methods, i.e. quartz crystal microbalance with dissipation monitoring (QCM-D) and ellipsometry, were used for erosion measurements of a rosin-based marine antifouling paint binder. Thin films of the binder were applied on sensor surfaces by the means of spin-coating and the effect of water velocity over the paint film, water temperature or ionic strength on erosion was investigated. Both the acoustic QCM-D model and the optical ellipsometry model gave comparable erosion results. The initial 2-50nm rapid erosion of the top layer was followed by steady-state erosion rate until end of experiment. For example, the steady-state erosion rate was 12nm/24h in artificial seawater at 23degreeC and with a flow of 200ml/min over the paint surface as measured with QC...

2008-01-01

428

Enthalpy changes upon partial evaporation of aqueous solutions containing ammonia and carbon dioxide  

Energy Technology Data Exchange (ETDEWEB)

The thermodynamic properties of aqueous solutions containing ammonia and sour gases such as carbon dioxide, sulfur dioxide, or hydrogen sulfide must be known in many applications. A typical example is the cleaning of raw gases in power stations. The enthalpy changes upon partial evaporation of aqueous solutions containing ammonia and of aqueous solutions containing ammonia and carbon dioxide were measured at temperatures from 313 to 393 K with a thin film evaporator flow calorimeter. The molalities of ammonia and carbon dioxide entering the calorimeter ranged up to 12 and 6 mol/kg, respectively. The physicochemical model originally developed by Edwards et al. (1978) and further modified and extended by Kurz et al. (1995) to describe phase equilibria in aqueous systems containing ammonia and carbon dioxide is used to derive a predictive enthalpy model for this complex, chemical reactive system. Comparisons between the new experimental results ...

1998-08-01

429

Electrical properties of ultra-thin oxynitrided layer using N{sub 2}O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass  

Energy Technology Data Exchange (ETDEWEB)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of capacitance-voltage characteristics ...

2007-06-04

430

Electrical properties of ultra-thin oxynitrided layer using N_2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass  

International Nuclear Information System (INIS)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of capacitance-voltage characteristics ...

2007-06-04

431

Effects of local texture and grain structure on the sputtering performance of tantalum  

Energy Technology Data Exchange (ETDEWEB)

Tantalum and tantalum-based thin films have gained precedence as the diffusion barrier for copper interconnects used in the latest generation of integrated circuits (ICs). The paper presents insight and observations on the covariance of texture and grain size of wrought tantalum sputtering targets and their influence on sputtering performance. Previous studies involving deposition trials of tantalum targets of varying metallurgical character had demonstrated that both grain size and textural homogeneity is critical for assuring reliable sputtering performance of tantalum. Subsequently, a model had been proposed to prescribe how localized texture bands and orientation clusters in tantalum are effectively resistant to sputter erosion. In this paper, results of atomic force microscopy (AFM) and orientation imaging microscopy (OIM{sup TM}) analyses on the eroded surface of a tantalum sputtering target are presented. Initial findings support the ...

2002-07-01

432

Effect of substrate temperature on structural properties and corrosion resistance of carbon thin films used as bipolar plates in polymer electrolyte membrane fuel cells  

International Nuclear Information System (INIS)

In this work, the effects of substrate temperature that was changed from 100 to 500 "oC on the structural, chemical and electrical properties of carbon films, prepared by direct current magnetron sputtering technique, on 316L stainless steel as bipolar plate had been investigated. Raman spectroscopy and scanning electron microscopy (SEM) were performed to study the structure and the morphology of the deposited films, respectively. The corrosion resistance and the electrical resistivity were carried out by using corrosion tests and four point-probe technique. The results show that the carbon films change the structure from amorphous to graphite-like by increasing temperatures. At the temperatures higher than 300 "oC, the holes and porosities are formed on the film indicating a decrease of film quality. According to our results, corrosion resistance and electrical properties are depended strongly on the substrate temperature.

2010-07-23

433

Effect of Hydrogen on leakage current characteristics of (Pb, La) (Zr, Ti)O{sub 3} (PLZT) thin film capacitors with Pt or Ir-based top electrodes  

Energy Technology Data Exchange (ETDEWEB)

The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and IrO{sub 2} are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in O{sub 2} ambient. The leakage current mechanisms of PLZT capacitors with Pt and IrO{sub 2} top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model. (author). 15 refs., 6 figs.

2001-02-01

434

Develop techniques for ion implantation of PLZT [lead-lanthanum-zirconate-titanate] for adaptive optics  

International Nuclear Information System (INIS)

Research was conducted at Pacific Northwest Laboratory to develop high photosensitivity adaptive optical elements utilizing ion implanted lanthanum-doped lead-zirconate-titanate (PLZT). One centimeter square samples were prepared by implanting ferroelectric and anti-ferroelectric PLZT with a variety of species or combinations of species. These included Ne, O, Ni, Ne/Cr, Ne/Al, Ne/Ni, Ne/O, and Ni/O, at a variety of energies and fluences. An indium-tin oxide (ITO) electrode coating was designed to give a balance of high conductivity and optical transmission at near uv to near ir wavelengths. Samples were characterized for photosensitivity; implanted layer thickness, index of refraction, and density; electrode (ITO) conductivity; and in some cases, residual stress curvature. Thin film anti-ferroelectric PLZT was deposited in a preliminary experiment. The structure was amorphous with x-ray diffraction showing the beginnings of a structure at ...

435

Determination of Inter-Phase Line Tension in Langmuir Films  

CERN Document Server

A Langmuir film is a molecularly thin film on the surface of a fluid; we study the evolution of a Langmuir film with two co-existing fluid phases driven by an inter-phase line tension and damped by the viscous drag of the underlying subfluid. Experimentally, we study an 8CB Langmuir film via digitally-imaged Brewster Angle Microscopy (BAM) in a four-roll mill setup which applies a transient strain and images the response. When a compact domain is stretched by the imposed strain, it first assumes a bola shape with two tear-drop shaped reservoirs connected by a thin tether which then slowly relaxes to a circular domain which minimizes the interfacial energy of the system. We process the digital images of the experiment to extract the domain shapes. We then use one of these shapes as an initial condition for the numerical solution of a boundary-integral model of the underlying hydrodynamics and compare the subsequent images of the experiment to ...

2007-01-01

436

Conversion of a plasma enhanced chemical vapor deposited silicon-carbon-nitride thin film at ultra-low temperature by oxygen plasma  

Energy Technology Data Exchange (ETDEWEB)

In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical analysis by X-ray photoelectron spectroscopy is reported for both the as-deposited and oxidized film and ...

2008-01-30

437

Controlled grain boundary structures in superconductors. Final report 1 Jan 77-31 Dec 81  

Energy Technology Data Exchange (ETDEWEB)

Theoretical work supported by this grant has lead to the concept of the specific pinning force Q and the development of new methods to sum elementary interaction forces to find Q. Pinning due to changes in transition temperature or thermodynamic critical field in thin layers (e.g., a grain boundary), is greatly reduced due to the proximity effect and the stress field interaction due to the dislocations in the grain boundary has been shown to be negligible. The crystalline anisotropy (CA) and electron scattering (ES) interactions have been computed for the first time for an arbitrary boundary. Experiments on niobium bicrystals, polycrystalline niobium thin foils doped with oxygen, lead-bismuth alloy thin films and lead-bismuth alloy films in which either lead or thallium has been allowed to diffuse down the grain boundaries and out into the grains provide evidence that confirms the predictions of the theory. These results suggest that further ...

1982-03-01

438

Chip type aluminum solid electronic capacitor using polypyrrole. Polypyrrole wo mochiita chip gata aluminum kotai denkai condenser  

Energy Technology Data Exchange (ETDEWEB)

In the past, organic substance is generally deemed as electrical insulator, but in recent years, molecular crystals and polymers showing electroconductivity like metal were synthesized and even those showing superconductivity have appeared. These materials are called organic metals or synthetic metals and have peculiar solid state physical properties. Examples of real application of organic electroconductive materials are becoming available, but in this article, a chip type aluminum solid electrolytic capacitor using polypyrrole is introduced. There are four kinds of capacitors including ceramic capacitors and aluminum electrolytic capacitors, etc. The aluminum electrolytic capacitor is most retarded than any other type of capacitor in introducing its chip type since its use of electrolytic solution becomes an obstacle. Polypyrrole synthesized by electrolytic polymerization through anode oxidation of pyrrole has good stability and high electroconductivity. Introduction of the chip type ...

1990-07-05

439

Characterization and nanopatterning of Ni{sub 2}MnIn Heusler films  

Energy Technology Data Exchange (ETDEWEB)

The Heusler alloy Ni{sub 2}MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si{sub 3}N{sub 4} membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the films grown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR). The almost perfect lattice match between InAs and Ni{sub 2}MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam resists, the samples are grown at substrate temperatures of 50 ...

2008-07-01

440

Advanced direct liquefaction concepts for PETC generic units. Quarterly report, October 1991--December 1991  

Science.gov (United States)

A laser pyrolysis technique has been used to produce ultrafine particles of iron carbide with diameters ranging from 2 to 20 nm. Catalysis using iron carbide was investigated in the liquefaction of Wyodak subbituminous coal; yields were determined. A study was carried out to examine the possibility of using an ultrasonic extraction technique as a rapid method of product work-up of samples following pretreatment or liquefaction experiments. A similar study had shown that extraction of coal-derived products by an ultrasonic method was rapid and gave yields and product distributions comparable to those obtained by Soxhlet extraction. On another project, three different types of supported catalysts were used to test activity for the combined water-gas shift hydrogenation of a synthetic donor solvent. The three catalysts tested were: (1) Alumina supported NiMo catalyst-Shell 324m; (2) Bulk hydrous TiO NiMo catalyst; (3) Thin film hydrous TiO ...

1991-12-31

441

Solid state diffusion in metal silicides  

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby silicide growth occurs in small increments and the concentration of ...

442

Relations between structural and superconducting properties of bulk and thin film high-T_c materials  

International Nuclear Information System (INIS)

The structural ordering of oxygen deficient and Co-doped YBCO (YBa_2Cu_3_-_yCo_yO_6_+_x) have been studied experimentally, and by computer simulations of the oxygen ordering in the basal plane of the structure. The calculations are based on the two-dimensional ASYNNNI model and its modifications. Good agreement is established between the ASYNNNI calculations and the experimentally observed structural properties of the double cell ortho-II structure and the oxygen disordering process from Co-doping into the basal plane. A model that relates the superconducting transition temperature T_c(x) of undoped YBCO and T_c(y) of Co-doped YBCO to the formation of specific domains of the two orthorhombic ordered oxygen phases, ortho-I and ortho-II, shows a close agreement with experimental T_c(x) and T_c(y) data of samples prepared under equilibrium conditions. The structural changes as a result of metal ion substitutions and oxidation/reduction processes have been studied by neutron powder ...

1984-02-13

443

Investigating of composition, structure and properties of Si modification under variable dose ions implantation influence  

International Nuclear Information System (INIS)

Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation ...

444

The surface modification of tooth dentine with a Free Electron Laser (FEL)  

International Nuclear Information System (INIS)

Free Electron Laser (FEL) with the wide wavelength tunability has been developed and used for various applications. The FEL gives high efficiency for the photo-induced ablation when the laser is tuned to an absorption maximum of the target. The FEL was tuned to 9.4 #mu#m, which is an absorption maximum of phosphoric acid ion, a known major component of dentine. The FEL pulse length was several ps. The average output power was varied from 5 to 20 mW by filters. The change of irradiated dentine surface was analyzed by mass spectroscopy and Energy Dispersive X-ray (EDX) spectroscopy. Positive ions which correspond to Na"+, CO_3"+ and many phosphoric acid ions were measured. It was found that atomic ratio of P/Ca had reduced from 0.65-0.60. The atomic ratio of P/Ca, however had not changed with irradiation by Er:YAG laser (2.9 #mu#m), or CO_2 laser (10.6 #mu#m). These results indicate the selective ablation of phosphoric acid ...

1998-09-02

445

Effect of Sr substitution on photoluminescent properties of BaAl2O4:Eu2+, Dy3+  

British Library Electronic Table of Contents (United Kingdom)

Phosphor material BaAl2O4:Eu2+, Dy3+ with varying compositions of Sr substitution were prepared by the solid-state synthesis method. The phosphor compositions were characterized for their phase and crystallinity by XRD, SEM and TEM. Photoluminescence (PL) properties were investigated measuring PL and decay time for varying Ba/Sr compositions. The PL results show the blue shift in the luminescence properties in Sr substituted BaAl2O4:Eu2+, Dy3+ compared to parent BaAl2O4:Eu2+, Dy3+. It is probably due to the influence of 5d electron states of Eu2+ in the crystal field because of atomic size variation causing crystal defects. Dy3+ ion doping in the phosphor generates deep traps, which results in long afterglow phosphorescence.

2008-01-01

446

Digital direct magnification mammography with storage phosphor screens. Standardized and image result dependent post-processing parameters  

International Nuclear Information System (INIS)

Present day mammography has not been able to make use of the advantages of digital luminescence radiography because of the limited spatial resolution. The recent development of electromagnetic focusing X-ray tube with effective focal spot sizes from 0.04 to 0.12 mm allows radiographic direct magnification with less geometric blur. It is now possible to combine direct magnification mammography with digital luminescence radiography. By combining high quality storage phosphor screens with an HQ-workstation a spatial resolution of 8 lp/mm is possible for 1.7-fold magnification. For 4-fold spot magnification views spatial resolution can be theoretically increased to approx. 20 lp/mm. One important advantage of digital radiography is the possibility of image-postprocessing. This article presents two sets of standard parameters and three sets of image dependent parameters for better imaging of specific lesions, such as microcalcifications. The introduction of the storage ...

447

Brine chemistry and control of adverse chemical reactions with natural gas production. Annual report, January-December 1986  

Energy Technology Data Exchange (ETDEWEB)

Monitoring brine chemistry to determine the extent of potential adverse reactions has been simplified by the development of a field-brine test kit and a series of nomographs. Results of the kit analyses serve as input to the nomographs, which provide a graphic means of determining the scaling tendency (Saturation Index value) of a brine. Brines that do not tend to form scale may be corrosive. Saturation Index values were correlated with various processes using data from geopressured wells in the Gulf Coast area. Control of scale in surface equipment with chemical inhibitors has been successful. Numerous laboratory simulations of inhibitor squeeze operations were completed using core material with calcite present and absent. The corresponding wells were squeezed with phosphorous-containing inhibitors, and the flowback of brine was monitored for phosphorous concentrations vs time. A new procedure to measure the concentration of ...

1987-01-01

448

Structure and magnetic properties of nanocrystalline Fe-Mo alloys prepared by mechanosynthesis  

International Nuclear Information System (INIS)

Nanocrystalline samples of Fe_8_0Mo_2_0 and Fe_5_0Mo_5_0 alloys were prepared by the mechanical milling method. The structure, lattice parameters, and crystallite size were determined by the X-ray diffraction. The magnetic properties of the milled products were determined by the Moessbauer spectroscopy. It was observed that in the case of the Fe_8_0Mo_2_0 alloy a solid solution of Mo in Fe was formed with the lattice parameters of the Fe increasing from 0.28659 nm to 0.29240 nm and the crystallite size decreasing from 250 nm to 20 nm. In the case of the Fe_5_0Mo_5_0 alloy there were no clear changes in values of the lattice parameters of Fe and Mo during the milling process, but the crystallite size decreased from 200 to 15 nm. Moessbauer spectra revealed different magnetic phases in the machanosynthesized Fe_Mo samples. In the case of the Fe_8_0Mo_2_0 alloy, the spectrum for the milled mixture indicated the formation of solid solution. In contrast, for the ...

2001-09-23

449

Negative Ames-test of cis-di(thiocyanato)-N,N'-bis(4,4'-dicarboxy-2,2'-bipyridine)Ru(II), the sensitizer dye of the nanocrystalline TiO{sub 2} solar cell  

Energy Technology Data Exchange (ETDEWEB)

Dye-sensitized nanocrystalline TiO{sub 2} solar cells are currently under development. Since these cells contain an electrolyte solution we reviewed the health and safety aspects in view of indoor applications, where personal contact cannot be excluded. Only small amounts of chemicals are present in each cell and so there is no danger of acute toxicity. However, long-term effects often can be caused by incidental contact with minute amounts. For this reason we have tested cis-di(thiocyanato)-bis(4,4'-dicarboxy-2,2'-bipyridine)Ru(II), the sensitizer dye in the Ames test. The dye was not mutagenic in the Salmonella typhimurium reverse mutation assay and in the Escherichia coli reverse mutation assay.

2000-01-01

450

Low-temperature synthesis and room temperature ultraviolet lasing of nanocrystalline ZnO films  

Energy Technology Data Exchange (ETDEWEB)

Nanocrystalline ZnO films were fabricated via a simple method involving the oxidation of Zn films at a remarkably low temperature of 380 C. X-ray diffraction study confirmed that the Zn films were completely oxidized even at the low temperature of 380 C and the ZnO films fabricated were of polycrystalline wurtzite structure. Room temperature optical pumping using a frequency-quintupled Q-switched Nd:YAG laser ({lambda}=213 nm) exhibited that sharp peaks at around 3.12 eV emerged above excitation powers of {proportional_to}7 MW/cm{sup 2}, demonstrating lasing in the ZnO films. These results represent that the process is a simple, promising approach for fabricating ZnO of sufficient optical performance for use as ultraviolet (UV) light emitters and an alternative UV laser source; both are key components in short-wavelength photonic devices. (orig.)

2005-02-01

451

Transformation of polyconjugation systems as a factor of enhancing the sorption activity of peat upon its modification with phosphoric acid and organic acids  

British Library Electronic Table of Contents (United Kingdom)

The treatment of peat with the solutions of phosphoric, citric, and oxalic acids in concentrations of 10???4 and 10???2 mol/l at solid phase to liquid ratios of 1: 2.5 and 1: 5 increased the absorption of ammonia by 6.4???39.7%. The absorption of ammonia was higher than the concentration of doping ion-exchange groups by a factor of 5???2000. With the use of EPR and IR spectroscopy, it was found that this phenomenon was caused by the transformation of polyconjugation systems as a result of the interaction of acids with the organic matrix of peat by a macrocoordination mechanism, which also improved the technological characteristics of the resulting sorbents. The absence of the destruction of organic matter with the use of low concentrations of weak acids makes it possible to use these sorbe...

2011-01-01

452

Sensitization and radiation hardening of the photostimulable X-ray storage phosphor CsBr:Eu2+  

British Library Electronic Table of Contents (United Kingdom)

The X-ray storage phosphor CsBr:Eu2+ in form of needle image plates is believed to be a promising alternative to the granular BaFBr:Eu2+ with regard to PSL yield and spatial resolution. Unfortunately, CsBr:Eu2+ exhibits poor radiation hardness, which is caused by a migration of europium ions initiated by naturally existing defect centers like (Eu2+-VCs)-centers and X-ray generated MEu-centers. It will be shown that the formation of (Eu2+-O2?)-dipoles at the expense of (Eu2+-VCs)-dipoles, incorporated by thermal annealing in O2-containing and humid atmosphere, does not improve the radiation stability. There is, however, a strong improvement in the radiation hardness by codoping of CsBr:Eu2+ with lithium ions, which is accompanied by a complete suppression of the previously observed MEu-cent...

2009-01-01

453

Local Ce environments and their effects on optical properties of SrS phosphors  

International Nuclear Information System (INIS)

In this study, we use electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopies to determine the various Ce environments in SrS phosphor materials and how these affect absorption and emission properties. As the Ce concentration is increased from 450 to 7500 ppm, the total EPR-active Ce"3"+ and optical absorption signals increase linearly with Ce concentration; by contrast, the PL intensity saturates at fairly low Ce concentrations (1000 ppm Ce). We suggest that the nonlinear behavior of the PL arises from the presence of nonradiative deexcitation pathways such as defects associated with Ce sites, or Ce endash Ce pairs. copyright 1996 American Institute of Physics.

454

Large scintillation cells for high sensitivity radon concentration measurements  

Energy Technology Data Exchange (ETDEWEB)

Methods for improving the sensitivity of scintillation cells for radon concentration measurements were studied with emphasis on improving light collection efficiency. This allows the length and hence the volume of the cell to be increased. Variables studied were choice of scintillator material, its method of application and thickness, length of cell, cell material, type and configuration of reflectors, choice of photomultipliers, and factors affecting background. Response from various areas of the cell surface was studied with an alpha source and with radon filling. Coating the window with phosphor was found to be counter-productive. The optimum results obtained were with the inside of the cell (other than the window) covered with a thick layer of ZnS(Ag), or with a thick layer of reflective material coated with a thin layer of phosphor. With it, a 10 cm diameter plexiglass cell can be extended to at least 50 cm length without difficulty from ...

1983-07-01

455

Large scintillation cells for high sensitivity radon concentration measurements  

International Nuclear Information System (INIS)

Methods for improving the sensitivity of scintillation cells for radon concentration measurements were studied with emphasis on improving light collection efficiency. This allows the length and hence the volume of the cell to be increased. Variables studied were choice of scintillator material, its method of application and thickness, length of cell, cell material, type and configuration of reflectors, choice of photomultipliers, and factors affecting background. Response from various areas of the cell surface was studied with an alphy source and with radon filling. Coating the window with phosphor was found to be counter-productive. The optimum results obtained were with the inside of the cell (other than the window) covered with a thick layer of ZnS(Ag), or with a thick layer of reflective material coated with a thin layer of phosphor. With it, a 10 cm diameter plexiglass cell can be extended to at least 50 cm length without difficulty from ...

456

Ability of a ?minimum?? microbial food web model to reproduce response patterns observed in mesocosms manipulated with N and P, glucose, and Si  

British Library Electronic Table of Contents (United Kingdom)

We compared an idealised mathematical model of the lower part of the pelagic food web to experimental data from a mesocosm experiment in which the supplies of mineral nutrients (nitrogen and phosphorous), bioavailable dissolved organic carbon (BDOC, as glucose), and silicate were manipulated. The central hypothesis of the experiment was that bacterial consumption of BDOC depends on whether the growth rate of heterotrophic bacteria is limited by organic-C or by mineral nutrients. In previous work, this hypothesis was examined qualitatively using a conceptual food web model. Here we explore the extent to which a ?simplest possible?? mathematical version of this conceptual model can reproduce the observed dynamics. The model combines algal?bacterial competition for mineral nutrients (phosphor...

2007-01-01

457

Nanocrystallization of the amorphous Fe_1_4Ni_4_0Zr_7B_1_2 alloys studied by the Moessbauer spectroscopy  

International Nuclear Information System (INIS)

Formation of the soft magnetic nanostructure in amorphous Fe_1_4Ni_4_0Zr_7B_1_2 alloy due to heat treatment is studied by the Moessbauer, differential scanning calorimetry, and X-ray diffraction techniques. Annealing at temperatures 520-580 "oC leads to the formation of extremely soft nanocrystalline alloy as revealed by the rf-Moessbauer measurements. The superparamagnetic behaviour was observed for the alloy annealed at 620-640 "oC. At higher annealing temperatures good soft magnetic properties deteriorate. (author)

2001-09-23

458

Impacts of amorphous metal-based transformers on energy efficiency and environment  

International Nuclear Information System (INIS)

Magnetic properties of a recently developed Fe-based amorphous alloy with a high saturation induction of 1.65 T are reviewed. The increased saturation induction is fully utilized in transformers with reduced magnetic losses, physical sizes and audible noises, minimizing some of the drawbacks of amorphous metal-based transformers based on a currently available amorphous alloy. Impacts of this on the worldwide energy savings and reduction of greenhouse gas emissions are discussed. A recent effort in achieving a saturation induction beyond 1.65 T in nanocrystalline alloys is mentioned.

2008-10-01

459

Electron microscopy and X-ray diffraction study of AlN layers  

International Nuclear Information System (INIS)

AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor layers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterization was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements. (author)

2001-09-23

460

Mapping Strain in Nanocrystalline Nitinol: an X-ray Diffraction Method (SULI paper)  

Energy Technology Data Exchange (ETDEWEB)

Understanding the mechanical properties of biomedical devices is critical in predicting and preventing their failure in the body. Such knowledge is essential, for example, in the design of biomedical stents, which must undergo repeated strain over their ten year lifetimes without breaking. Computational models are used to predict mechanical response of a device, but these models are not complete; there are significant deviations from the predictions, especially when devices are subjected to repeated multi-axial loads. Improving these models requires comparisons with actual measurements of strained nitinol. Local measurements of the full strain tensor can be made using X-ray diffraction techniques, but they are currently limited to materials whose grain size is larger than the X-ray beam size or require several diffraction patterns produced by rotation of the sample. Nitinol stents are nanocrystalline, with grains smaller than any available X-ray beam. We present a ...

2006-01-04

461

The separation and determination of trace elements in iron ore  

International Nuclear Information System (INIS)

The separation, concentration, and determination of trace elements in iron ores are described. After the sample has been dissolved, the iron is separated by liquid-liquid extraction with a liquid cation-exchanger, di-(2-ethylhexyl) phosphoric acid. The trace elements aluminium, cadmium, calcium, chromium, cobalt, copper, lead, magnesium, manganese, mercury, potassium, sodium, vanadium, and zinc are determined in the aqueous phase by atomic-absorption spectrophotometry.

2008-05-01

462

Sustainable phosphorous fertilisation of potatoes (Potato CHIPS)  

Environmental Research Database

DescriptionThis project has two independent aims: (1) to investigate the use of struvite as an alternative to chemical P fertilisers and (2) to develop an oligonucleotide microarray to monitor the P status of the potato crop. The UK horticultural and agricultural industries rely on large inputs of phosphate (P) fertilisers to maintain crop yields and quality. However, the use of non-renewable, chemical P fertilisers is unsustainable, and the alternatives to chemical P-fertilisers must be identified as an [continued...

2008-01-31

463

Redox battery  

Science.gov (United States)

In a redox battery using a titanium redox system or chromium redox system as an active material for the negative electrode or a manganese redox system as an active material for the positive electrode, the electromotive force of the battery and the stability of electrolyte solutions are enhanced by addition of a chelating agent such as citric acid or a complexing agent such as phosphoric acid to the redox system used therein.

1982-12-07

464

Method of preparation of crystal borophosphate with zeolite structure. Sposob polucheniya kristallicheskogo borofosfata tseolitnoj struktury  

Energy Technology Data Exchange (ETDEWEB)

Hydrothermal method for preparing crystal borophosphate with zeolite structure is suggested. To increase absorption capacity and thermal stability of final product, aluminium hydroxide sol, ethylenediamine and ethyl acetate are added to the mixture of crystal boric and concentrated phosphoric acids. Thermal stability of the specimens prepared constitutes 880-950 deg, water absorption capacity is within the limits of 0.30-0.32 cmT/g. 1 table.

1984-12-24

465

Impact of computers in radiography: the advent of digital radiography, part-2  

International Nuclear Information System (INIS)

Computed radiography (CR) systems use a photostimulable phosphor plate enclosed in a cassette. In CR, image acquisition is a two-stage process wherein image capture and image read out are done separately. Direct digital radiography (DR) systems, on the other hand, use detectors that have a combined image capture and image read out capability. DR systems are also called as DDR or ddR systems by some vendors. This article focuses on DR systems

2008-08-01

466

A gas chromatographic analysis of phosphine in biological material in a case of suicide  

British Library Electronic Table of Contents (United Kingdom)

In a suicide committed using aluminium phosphide (AlP) the liberated toxic phosphine gas was detected in post-mortem specimens using a headspace gas chromatographic procedure with a nitrogen-phosphorous detector (HS-GC/NPD). At autopsy a direct sampling into airtight headspace vials for a later analysis is recommended. AlP has to be considered a potent pesticide and its use and availability should be restricted as much as possible.

2008-01-01

467

Absorption and emission characteristics of Er{sub 3}NbO{sub 7} phosphor: A comparison with ErNbO{sub 4} phosphor and Er:LiNbO{sub 3} single crystal  

Energy Technology Data Exchange (ETDEWEB)

Er{sub 3}NbO{sub 7} phosphor was synthesized by sintering a mixture of Er{sub 2}O{sub 3} and Nb{sub 2}O{sub 5} powder in a molar ratio of 3:1 at 1600 deg. C over 55 h. Optical absorption and emission characteristics of Er{sup 3+} ions in the calcined Er{sub 3}NbO{sub 7} powder were investigated and discussed compared with ErNbO{sub 4} phosphor and a Z-cut congruent Er (2 mol%):LiNbO{sub 3} single crystal. The absorption and emission studies show that, due to different crystal structures, the spectroscopic properties of these niobates have some differences in spectral shape, peak position, and relative intensity, especially at 1.5 {mu}m. The most obvious spectral feature of the Er{sub 3}NbO{sub 7} is that the spectral structure of band instead of peak is observed in its absorption or emission spectrum due to the existence of local structural disorder and multiple Er{sup 3+} sites. The Er{sub 3}NbO{sub 4} shows stronger upconversion emission than ...

2007-12-15

468

Water in polymer membranes. 4. Raman scattering from cellulose acetate films  

Energy Technology Data Exchange (ETDEWEB)

Raman scattering was observed from thin film optical waveguides of cellulose acetate exposed to water vapor from 0% to 100% relative humidity (RH), and from dilute solutions of water in methyl acetate. Spectra of cellulose acetate (CA398, 39.8% acetyl) at low RH and cellulose triacetate (CTA) at low and high RH are consistent with the presence of water monomers that are weakly hydrogen bonded to acetyl C=O groups. Differences between the spectra of water in CA398 and CTA at low RH are attributed to sequential hydrogen bonding involving OH groups in CA398. At high RH, CA398 and CTA (to a lesser extent) show bands attributed to water/water interactions that are similar to those found in sequentially hydrogen-bonded hydrates. CA398 films that are annealed at high temperatures exhibit decreased water/water interactions at high RH. Exposure of CA398 films to D/sub 2/O converts > 90% of all polymer OH groups to OD groups. This indicates that water ...

1985-01-17

469

Thermal stability of nanocomposite CrC/a-C:H thin films  

International Nuclear Information System (INIS)

The thermal stability of low-friction Me-C/a-C:H coatings is important for their potential applications in the tool and automotive industry. Recently we showed that CrC _x/a-C:H coatings prepared by unbalanced magnetron sputtering of a Cr target in Ar + CH_4 glow discharges exhibit a nanocomposite structure where metastable fcc CrC nanocrystals are encapsulated by an a-C:H phase. Here, we present the structural evolution of these nanocomposite CrC/a-C:H coatings during annealing. High-temperature X-ray diffraction in vacuum and differential scanning calorimetry (DSC) combined with thermo-gravimetric analysis in Ar atmosphere indicate decomposition of the formed metastable fcc CrC phase and subsequent formation of Cr_3C_2 and Cr_7C_3 and structural transformation of the a-C:H matrix phase towards higher sp"2 bonding contents at temperatures above 450 deg. C. Combined DSC and mass spectrometer analysis as well as elemental profiling after annealing in vacuum by elastic recoil detection ...

2007-05-07

470

Tantalum nitride and tungsten as diffusion barriers for palladium and cobalt silicides in multilayer metallization schemes  

Science.gov (United States)

The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be successful in preventing metallurgical interdiffusion, they may ...

1988-01-01

471

Sub-0.1 #mu#m line fabrication by Focused ion beam and columnar structural Se-Ge resist  

International Nuclear Information System (INIS)

As a method to enhance the sensitivity (S) of an inorganic resist for focused-ion-beam (FIB), lithography, sub-0.1 #mu#m patterning properties of a columnar structural #alpha#-Se_7_5Ge_2_5 resist have been investigated using 30 keV low-energy Ga"+-FIB exposure and CF_4 reactive-ion etching (RIE). development. The Se_7_5Ge_2_5 thin films were 60 .deg. and 80 .deg. -obliquely deposited on Si substrate and parts of the films were annealed for several minutes at the glass transition temperature (T_g=#approx#220 .deg. C). Columnar structures with the angles of approximately 40 .deg. and 65 .deg. are observed in 60 .deg. and 80 .deg. -obliquely deposited films, respectively, and they disappear after annealing. Despite the disappearance of the columnar structures, a critical decrease in thickness is not observed. For the FIB exposures with a beam diameter of #approx#0.1#mu#m and around the threshold dose, the negative-type fine patterns with linewidth ...

1998-11-01

472

Strategies for gallium removal after focused ion beam patterning of ferroelectric oxide nanostructures  

International Nuclear Information System (INIS)

As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO_3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is associated with the formation of gallium-rich platelets on the surface of the annealed ...

2007-01-24

473

Spectroscopic and electrochemical characterisation of thin cathodic plasma polymer films on iron  

International Nuclear Information System (INIS)

Complimentary spectroscopic, microscopic and electrochemical studies were performed to characterise the barrier properties as well as the interface structure of model iron substrates covered with thin plasma polymer films. Cathodic plasma polymers were deposited which show high barrier properties. The metal surface was pre-treated by a reducing or oxidising plasma. This allowed the adjustment of the oxidation state of the interface layer. The interface structure was characterised by means of X-ray photoelectron sputter profiles, infrared spectroscopy and the application of a Kelvin probe. The investigations show that the measured Voltapotential on the plasma polymer surface can be correlated with the oxidation state of the interface. Reducing plasmas lead to an almost oxide free surface. After deposition of the plasma polymer, this reduced state of the oxide is sensitive to re-oxidation of the interface by oxygen that diffuses through the plasma polymer. It could be shown that the ...

2004-05-15

474

Rare-earth mixed oxide thin films as 100% lattice match buffer layers for YBa2Cu3O7-x coated conductors  

International Nuclear Information System (INIS)

Buffer layers with 100% lattice match with YBa2Cu3O7 - ? (YBCO) were prepared from mixed rare-earth-oxides applying a simple sol-gel process and dip-coating method. Structural analysis of the sol-gel derived powder by X-ray diffraction revealed that the mixing parameter, which eliminates the lattice mismatch with YBCO, is x = 0.2382, 0.1852, 0.1252, 0.0906, 0.0793 and 0.0395 in (Eu1 - xHox)2O3, (Eu1 - xErx)2O3, (Eu1 - xYbx)2O3, (Gd1 - xHox)2O3, (Gd1 - xYx)2O3 and (Gd1 - xYbx)2O3, respectively. Microstructural investigations were carried out for Gd1.819Ho0.181O3 films epitaxially grown on cube-textured Ni (100) substrates by sol-gel dip-coating process. X-ray diffraction of the buffer showed strong out-of-plane orientation on Ni tape. The (Gd1 - xHox)2O3 (222) pole figure indicated a single cube-on-cube textured structure. The omega and phi scans revealed good out-of-plane and in-plane alne alignments. The full-width at half-maximum values of omega and phi scan of (Gd1 - xHox)2O3 films ...

2010-04-02

475

Quantification of the incorporation coefficient of a reactive gas on a metallic film during magnetron sputtering: The method and results  

International Nuclear Information System (INIS)

Reactive Magnetron Sputtering is a complex process and huge efforts are made addressing the understanding of its fundamental phenomena and the simulation of the deposition process by e.g. Particle in Cell/Monte Carlo (PIC/MC). One of the most uncertain parameters in this reactive sputtering process is the incorporation coefficient of the reactive gas in the growing layer, i.e. the real-time sticking coefficient during deposition. In this work, mass spectrometry is used to deliver more insights on this complex matter. Earlier, a method was developed to determine the incorporation coefficient of the reactive gas molecules in the growing metal film, using mass spectrometry combined with thin film analysis techniques (electron probe microanalysis and x-ray photoelectron spectroscopy). This method delivers a global, realistic incorporation coefficient which can be used in models for the reactive sputtering process. In this work, new insights have ...

2009-12-31

476

Properties of surface layers on titanium alloy produced by thermo- chemical treatments under glow discharge conditions  

Energy Technology Data Exchange (ETDEWEB)

The recent rapid progress in surface treatment techniques dictates that the titanium alloys should have an improved resistance to frictional wear without any loss of their high corrosion resistance. These requirements can be satisfied by producing surface layers of specified microstructure and phase composition. The present paper describes a modification of the plasma discharge nitriding treatment of titanium alloys, i.e. the glow discharge-assisted oxycarbonitriding, which by introducing oxygen, nitrogen and carbon into the surface zone of the layer [a Ti(NCO) type layer] improves its useful properties, primarily the resistance to frictional wear and the resistance to corrosion [T. Wierzchon, J. Sobiecki, Vacuum, 44 (1993) 975; T. Wierzchon et al., in: G. Hecht, F. Richter, J. Hahn (Eds.), Thin Films, DGM Informationgesellschaft, Germany, 1994, p. 195] [1:2]. This is because titanium shows a good affinity to oxygen, carbon and nitrogen, ...

1997-11-25

477

Plasma-based ion implantation and deposition: A review of physics,technology, and applications  

Energy Technology Data Exchange (ETDEWEB)

After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases ...

2005-05-16

478

Photoelectrocatalytic degradation of organic pollutants with TiO{sub 2} electrodes  

Energy Technology Data Exchange (ETDEWEB)

Photoelectrochemical oxidation is a potentially interesting method for destroying toxic organic materials. We have studied the photoelectrocatalytic activity of TiO{sub 2} films made by thermal oxidation of titanium, low pressure chemical vapour deposition (LPCVD), and anodisation of titanium. Two model organic compounds have been investigated for photooxidation: methyl phosphonic acid (MPA) which is a nerve gas analogue and 4-chlorophenol (4-CP) which is a chlorinated aromatic compound considered a standard for the evaluation of the TiO{sub 2} / UV processes. In addition to photoelectrochemical characterisation the films have been characterised by profilometry, XRD, AFM, photocurrent spectroscopy and Raman microscopy. Correlations have been made between the physical properties of the thin films and their catalytic activities. The most catalytic sample of thermally oxidised titanium was prepared at 400 deg C, and the presence of anatase was ...

2001-07-01

479

Perpendicular magnetic anisotropy of ultrathin FeCo alloy films on Pd(0 0 1) surface: First principles study  

International Nuclear Information System (INIS)

Using the full potential linearized augmented plane wave (FLAPW) method, thickness dependent magnetic anisotropy of ultrathin FeCo alloy films in the range of 1 monolayer (ML) to 5 ML coverage on Pd(0 0 1) surface has been explored. We have found that the FeCo alloy films have close to half metallic state and well-known surface enhancement in thin film magnetism is observed in Fe atom, whereas the Co has rather stable magnetic moment. However, the largest magnetic moment in Fe and Co is found at 1 ML thickness. Interestingly, it has been observed that the interface magnetic moments of Fe and Co are almost the same as those of surface elements. The similar trend exists in orbital magnetic moment. This indicates that the strong hybridization between interface FeCo alloy and Pd gives rise to the large magnetic moment. Theoretically calculated magnetic anisotropy shows that the 1 ML FeCo alloy has in-plane magnetization, but the spin reorientation ...

2009-06-01

480

Organic light-emitting devices based on solution-processible quinolato-complex supramolecules  

International Nuclear Information System (INIS)

This paper discusses a new type of supramolecular material tris{5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinolato} aluminum(III), Al(SCarq)3, which we synthesized using three 5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinoline as bidentate ligands. The peak photoluminescence in the solid phase appears at 488 nm. In cyclic voltammetric measurement, two oxidation peaks, which were obtained at -5.6 and -5.9 eV, correspond to HOMO sites of carbazoyl and aluminum quinolates, respectively. In the investigation of solid morphological thin film, the flat surface was investigated using an atomic force microscope. The root mean square (rms) and mean roughness (Ra) were respectively measured to be 0.427 and 0.343 nm. For the fabrication of organic light-emitting devices (OLEDs) using spin-coating techniques, the turn-on voltage and maximum luminescence of the optimized electroluminescence ...

2009-02-15

481

Optical absorptance and thermomodulation studies of several A-15 compounds  

Energy Technology Data Exchange (ETDEWEB)

The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputtered films. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10/sup 0/K temperature wave is applied), performed at two ambient temperatures (80 and 300/sup 0/K), yielding the differential dielectric function. The sputtered films included Nb/sub 3/Ge, Nb/sub 3/Al, V/sub 3/Ga and Nb/sub 3/Ir. It is noted that Nb/sub 3/Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V/sub 3/Si, V/sub 3/Ge and single crystal Cr/sub 3/Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with the absorptance ...

1983-06-01

482

Optical absorptance and thermomodulation studies of several A-15 compounds  

International Nuclear Information System (INIS)

The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputtered films. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10_0K temperature wave is applied), performed at two ambient temperatures (80 and 300_0K), yielding the differential dielectric function. The sputtered films included Nb"3Ge, Nb"3Al, V"3Ga and Nb"3Ir. It is noted that Nb"3Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V"3Si, V"3Ge and single crystal Cr"3Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with the absorptance measurements in comparison to band structure ...

483

Novel silicon fabrication process for high-aspect-ratio micromachined parts  

Energy Technology Data Exchange (ETDEWEB)

Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...

1995-08-01

484

Large scale rooftop photovoltaics grid connected system at Charoenphol-Rama I green building  

Energy Technology Data Exchange (ETDEWEB)

This paper presents a technical feasibility study project for the large scale rooftop photovoltaics (PV) grid connected system at Charoenphol-Rama I green building super store of TESCO LOTUS (TL) in Thailand. The objective of this project is (i) to study the technical feasibility of installation 350 kWp PV systems on the top of the roof in this site (ii) and to determine the energy produce from this system. The technical factors are examined using a computerized PVS 2000 simulation and assessment tool. This super store building located in Bangkok, with latitude 14 N, longitude 100 E and the building direction is 16 from North direction. The building roof area is 14,000 m2; with 3 degree face East and 3 degree face West pitch. Average daily solar energy in this area is approximately 5.0 kWh. The study team for this project consists of educational institution as School of Renewable Energy Technology (SERT) and private institution as Panya Consultants (PC). TL is the project owner, PC is ...

2004-07-01

485

Kinetics of Pd/sub 2/Si layer growth measured by an x-ray diffraction technique  

Science.gov (United States)

An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd/sub 2/Si layers. Epitaxial Pd/sub 2/Si films were grown on Si(111) substrates over a temperature range of 160-222/sup 0/C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy E/sub a/ = 1.06 eV and prefactor k/sub 0/ = 7 x 10/sup -4/ cm/sup 2//s. The low value of E/sub a/ suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were detected at the Pd/sub ...

1986-05-15

486

Interface engineering in chalcopyrite thin film solar devices  

Energy Technology Data Exchange (ETDEWEB)

Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se){sub 2} ('CIGSSe')-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E{sub g} in the absorber layer is demonstrated. The modification of E{sub g} towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is considered. Between CIGSSe ...

2006-06-15

487

Input deuteron states in Mo even isotopes  

International Nuclear Information System (INIS)

An attempt is taken to explain anomalies in "9"2Mo(d, n)"9"3Tc, "9"2Mo(d, #alpha#)"9"0Nb, "9"4Mo(d, n)"9"5Tc, "9"8Mo(d, n)"9"9Tc, "9"8Mo(d, p)"9"9Mo, "9"8Mo(d, #alpha#)"9"6Nb, "1"0"0Mo(d, p)"1"0"1Mo and "1"0"0Mo(d, n)"1"0"1Tc reactions with input states having a one-particle nature. Thin films saturated with molybdenum isotopes at the approximately 1 mgxcm"-"2 surface density are used as targets. The targets are irradiated by the extracted cyclotron beam. The deuteron energy is 5-12 MeV. The reaction cross sections are determined by the activation analysis method. Quasi-stationary levels of the nucleus-deuteron system are calculated. Weak anomalies revealing in a smooth (d, #alpha#) reaction cross section on sup(92, 98)Mo nuclei, which do not necessarily correlate with anomalies in the (d, n) and (d, p) channels, are observed. The ground states of the (d, #alpha#) reaction products "9"0Nb and "9"6Nb have (8"+) and (6"+) spins, respec,.ively, ...

488

High density of nanodots on atomically flat CeO_2 buffer layers for inducing effective vortex-pinning centers in YBa_2Cu_3O_7_-_#delta# films on sapphire  

International Nuclear Information System (INIS)

Epitaxial CeO_2 buffer layers were fabricated by pulsed laser deposition (PLD) on r-cut sapphire substrates. An atomically flat CeO_2 surface with a high density of nanodots was formed by a self-assembly process. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy investigation showed that the nanodots were CeO_2 other than impurities. YBa_2Cu_3O_7_-_#delta# (YBCO) thin films were then grown on the annealed and the as-grown CeO_2-buffered sapphires by PLD. The transport measurement results showed that the nanodots enhanced the effective pinning potential and significantly increased critical current density (J _c). Especially, YBCO films with an annealed CeO_2 buffer layer showed a high J _c peak when the applied field was directed along the c-axis of YBCO. Cross-section transmission electron microscopy investigation revealed that the J _c peaks in YBCO with annealed CeO_2 buffer layer is caused by c-axis ...

2006-12-05

489

Growth rate control and solid-gas modeling of TFA-YBa_2Cu_3O_7 thin film processing  

International Nuclear Information System (INIS)

The trifluoroacetate metal-organic decomposition route to YBa_2Cu_3O_7 film growth was investigated in order to bring new insights in the growth mechanism and its dependence on processing conditions and critical current density. Precursor films were processed on LaAlO_3 substrates at different total pressure, oxygen partial pressure, water vapor partial pressure, and volume gas flow rate keeping the growth temperature at 740 "0C. The influence of these various experimental parameters on the film growth rate, which was evaluated by in situ electrical resistance measurements, was studied thoroughly. It was found that the growth rate is nearly independent of the oxygen pressure and proportional to the square root of the water pressure. Additionally, the growth rate increases with a decrease of the total pressure or an increase of the gas flow rate. An empirical multi-exponential model simulates the experimental data, however, a better understanding was achieved using a theoretical ...

2010-03-01

490

Further development of the RTFE technique for the comprehensive management of liquid radioactive wastes from Russian NPP in Comecon countries. Final report; Weiterentwicklung der RDA-Technologie fuer die umfassende Entsorgung von in den RGW-Laendern anfallenden radioaktiven Fluessigkeiten aus KKW sowjetischen Typs. Schlussbericht  

Energy Technology Data Exchange (ETDEWEB)

The composition of alkaline and neutral boric acid containing evaporator concentrates resulting from the treatment of radioactive waste water in nuclear power plants with WWER reactors is described as well as the processing of these concentrates to a product suitable for final disposal. Tests with mock solutions of these evaporator concentrates have been performed at the laboratory and teststand scale to produce a dry residue by continuous thickening, which can be processed into a highly leach resistant product, suitable for final disposal, by cementation. Ca-compounds must be added to the evaporator concentrates prior to the drying in an rotary thin-film evaporator (RTFE). The tests showed that neutral evaporator concentrates can be dried in a RTFE with addition of small amounts of Ca-compounds. The alkaline evaporator concentrates with high boric acid and total salt load require a multiple amount of Ca-compounds and diluting water to perform the drying process. A ...

1992-04-01

491

Fiscal 1993 report on results of R and D on innovative technology for producing advanced biomaterial. Peptide applied carbon dioxide fixation/effective utilization technology (First volume); 1993 nendo senshin bio zairyo no sosei kako gijutsu no kenkyu kaihatsu seika hokokusho. 1. Peptide oyo nisanka tanso koteika yuko riyo gijutsu  

Energy Technology Data Exchange (ETDEWEB)

Technology is being developed for preparing functional materials by synthesizing new functional peptides in which non-natural amino acid needed for the functional manifestation is introduced, and by modifying the surface of a base plate such as silica glass by using such peptides. Activities were conducted in the three areas of (1) creation of functional molecules, (2) materialization technology, and (3) comprehensive investigation and research; the activities were carried out independently and parallelly in the first two areas. In (1), design technique for the structures and functions of peptides was developed, as were conformational control technique, synthesis of peptides having optical/electronic functions, peptide synthesis by an enzyme method, and R and D on introduction of non-natural amino acid into peptides; in (2), element technologies were developed such as substrate forming technique (pattern forming and thin film forming ...

1994-03-01

492

Experimental estimation of the hot spot size in Nb-based Josephson tunnel junctions using Abrikosov vortices  

Energy Technology Data Exchange (ETDEWEB)

We report on a new experimental approach to the size estimation of the hot spot induced by ionizing particles in a Josephson tunnel junction. Here, in contrast to the case of a superconducting strip, it is possible to investigate the hot spot dynamics in absence of effects due to the heating induced by the bias current. The reported experiment is based on the motion of Abrikosov vortices, trapped in the thin films constituting the junction electrodes, under 5.6 MeV {alpha}-particle irradiation. The fast time evolution of a hot spot, combined with the presence of Abrikosov vortices, produces a change of the static magnetic field in the junction area and thus a change of the critical current value, I{sub c}. Measurements of I{sub c} during the {alpha}-particle irradiation and in presence of trapped Abrikosov vortices allow to determine the rate of appearance of those I{sub c} changes. The behavior of the average appearance rate as function of the ...

1997-11-01

493

Elastic recoil detection analysis of ferroelectric films  

Energy Technology Data Exchange (ETDEWEB)

There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the determination of separate energy spectra ...

1996-12-31

494

Effective laser luminescence of nanocomposites Eu(TTA)2(Ph3PO)2NO3-polyvinylpyrrolidone  

International Nuclear Information System (INIS)

Thin films (1-10 ?m thickness) of nanocomposites (NC) based on organic coordinated compound (OCC) Eu(TTA)2(Ph3PO)2NO3 (where TTA is thenoyl trifluoroacetonate (C8H5F3O2S), Ph3PO - triphenylphosphine (C6H5PO) and polymer-polyvinylpyrrolidone ((C6H9NO)n) (PVP)) were obtained by chemical methods and with different molar ratios into organic polymer matrix. NC have been characterized by measurements of optical transmission, excitation spectra of photoluminescence (PL) and photoluminescence of NC at different concentrations of Eu(TTA)2(Ph3PO)2NO3 in NC. In the optical transmission of NC, the characteristic parameters of NC such as threshold absorbance, dependence on the concentration of the organic coordinated compound in NC, etc., have been determined The displacement of threshold absorption to infrared is observed with increasing of the concentration of the coordination material in NC. The excitation spectrum of photoluminescence of NC led the ...

2011-07-07

495

Comparative studies on titanium and tantalum oxides thin film structures for laser mirrors, deposited by ion assisted gun  

International Nuclear Information System (INIS)

For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are compared and characterized, using a high resolution SEM and a x-ray diffractometer, respectively. The fabrication process and the ...

1996-10-07

496

Bioactivity and corrosion properties of novel coatings containing strontium by micro-arc oxidation  

International Nuclear Information System (INIS)

Research highlights: The dental implant of titanium could be modified by anodic oxidation. It was found that incorporation of strontium ions into the matrix increase the bone formation. In this study, we try to investigate the effect of corrosion property and bioactivity on coatings containing strontium by anodic oxidation. The results suggest that coatings containing strontium on titanium by anodic oxidation has the potential to show the stability and bioactivity in the clinical use. - Abstract: Pure titanium (Ti) and titanium alloys are considered as bio-inert materials in clinical use. Bioactivity is the ability to induce bone-like apatite on the material surface. The micro-arc oxidation (MAO) technique is an effective method for improving the surface properties of titanium. The aim of this study was to investigate the bioactivity and corrosion behavior of MAO coatings containing strontium, which is beneficial for biological performance. The bioactivity of materials was evaluated ...

2010-10-22

497

A study of palladium silicide formed by focused ion beam implantation of palladium ions  

Science.gov (United States)

The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly few defect ...

1989-01-01

498

A study of palladium silicide formed by focused ion beam implantation of palladium ions  

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. A heat transfer model ...