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The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

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The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

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... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

British Library Electronic Table of Contents (United Kingdom)

Magnetic properties of Fe-Co-Mo-Cu-B alloy system with Co up to 26at.% were investigated. After proper thermal treatment, the nanocrystalline grain remains tiny, the density hardly increases, but the room-temperature saturation attains 1.5T mainly due to a high enough Curie temperature. The generally observed slant hysteresis loops point to ribbon surfaces, which stress the ribbon interior and induce a specific magnetoelastic contribution to hard-ribbon-axis magnetic anisotropy even after vacuum annealing. The effect does not come from cobalt but rather from the lack of silicon. Partial removal of the surfaces resulted in a decrease of the loop tilt.

International Nuclear Information System (INIS)

Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical absorbance of the film ...

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The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

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The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

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In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

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The crystallite size and orientation in molybdenum films prepared by magnetron sputtering at a low rate of typical 1 (angstrom)s and a pressure of 0.45 Pa was investigated by X-ray diffraction and texture analysis. The surface topography was studied using atomic force microscopy. Increasing the film thickness from 20 nm to 3 microm, the films show a turnover from a (110) fiber texture to a (211) mosaic-like texture. In the early state of growth (20 nm thickness) the development of dome-like structures on the surface is observed. The number of these structures increases with film thickness, whereas their size is weakly influenced. The effect of texture turnover is reduced by increasing the deposition rate by a factor of six, and it is absent for samples mounted above the center of the magnetron source. The effect of texture turnover is related to the bombardment of the films with ...

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Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.

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Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

International Nuclear Information System (INIS)

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

Science.gov (United States)

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel ...

International Nuclear Information System (INIS)

The corrosion behavior of the sputter-deposited amorphous or nanocrystalline W-Nb alloys is studied in 10% NaCl, 0.1 and 1 M NaOH solutions at 24 deg. C, open to air using immersion tests and electrochemical measurements. Niobium metal acts synergistically with tungsten in enhancing the corrosion resistance of the W-Nb alloys so as to show lower corrosion rates than the corrosion rates of the alloy-constituting elements in almost all examined solutions. Corrosion rates of W-Nb alloys are about more than one order of magnitude less than that of the sputter-deposited tungsten and even lower than that of sputter-deposited niobium. The stability of the anodic passive films formed on the W-Nb alloys increase with niobium content.

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Chlorophyll-a (Chl-a) assembled in hydrophobic domain by fatty acid with long alkyl hydrocarbon chain such as myristic acid (Myr), stearic acid (Ste) and cholic acid (Cho) modified onto nanocrystalline TiO{sub 2} electrode is prepared and the photovoltaic properties of the nanocrystalline TiO{sub 2} film by Chl-a are studied. Incident photon to current efficiency (IPCE) value at 660 nm in photocurrent action spectrum of Chl-a/Ste-TiO{sub 2}, Chl-a/Myr-TiO{sub 2} and Chl-a/Cho-TiO{sub 2} electrodes are 5.0%, 4.1% and 4.1%, respectively. Thus, the IPCE is maximum using Chl-a/Ste-TiO{sub 2} electrode. From the results of photocurrent responses with light intensity of 100 mW cm{sup -2} irradiation or monochromatic light with 660 nm, generated photocurrent increases using Chl-a/Ste-TiO{sub 2} electrode compared with the other Chl-a assembled TiO{sub 2} electrodes. These results show that the hydrophobic domain formed by stearic ...

International Nuclear Information System (INIS)

Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.

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Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.

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Substantial changes in the radial distribution function of amorphous Si films have been observed in neutron-diffraction studies. The spectra indicate changes in short-range order associated with an approx.11% modification in the bond-angle distribution width. The results allow the first direct comparison of structural and vibrational Raman probes of variations in local order in thin-film amorphous solids. Good agreement is obtained between the measured bond-angle variation and that based on Raman estimates.

International Nuclear Information System (INIS)

The optical properties and microstructure of germanium (Ge) films, prepared by ion-assisted deposition (IAD) process, were investigated. The Ge films were deposited on sapphire and silicon substrates, with and without simultaneous Ar+ bombardment. Higher index films, with a refractive index 7.7% larger than that of the single crystalline Ge wafer, were obtained with the IAD process. The density of the IAD film could be 1.5% greater than that of the e-beam film. The results of the heat treatment indicated that the optical and structural properties of the IAD films were more stable. Ge nano-crystallites could be observed under high ion power density, which induced a crystalline structure in the Ge thin films. The average size of the nano-crystallites, as determined from both the X-ray diffraction data and the transmission ...

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An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO_2. As shown by the investigations of a study of the anodic behavior of Fe_4_0Ni_4_0P_1_4B_6 and Fe_4_0Ni_3_8Mo_4B_1_8, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of ...

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The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.

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Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

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Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as ...

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Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

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A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.

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The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd/sub 2/Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-..sqrt..3x..sqrt..3R30/sup 0/, the feature being similar to the cases of Ag, Au/Si(111) systems.

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...

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Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

International Nuclear Information System (INIS)

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.

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Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

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MmMg{sub 12}-Ni amorphous or nanocrystalline composites (Mm: Ce-rich mischmetal) were prepared through the ball-milling method, and their electrochemical hydrogen storage performance was investigated and compared with that of ball-milled CeMg{sub 12}-Ni composites. It was found that the ball-milled MmMg{sub 12}-Ni composites had larger initial discharge capacities and better high rate dischargeability. Analysis of electrochemical impedance spectra (EIS) shows that the reaction resistance and hydrogen diffusion resistance of the ball-milled MmMg{sub 12}-Ni composites are lower as a result of the decrease in Ce content, and thus can contribute to the larger discharge capacity and better high rate dischargeability. Additionally, the cycle performance of the ball-milled MmMg{sub 12}-Ni composites is better than those of the ball-milled CeMg{sub 12}-Ni composites. This may be related to the formation of a Nd oxide or Nd(OH){sub 3} film on surface of ...

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The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel ...

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Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

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As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...

International Nuclear Information System (INIS)

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO_2 films was studied. A 'blue'-shift of PL spectrum from the SiO_2 films implanted with Si"+ ions to total dose of 1.2x10"1"7 cm"-"2 with increase in hydrostatic pressure was observed. For the films implanted with Si"+ions to a total dose of 4.8x10"1"6 cm"-"2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

International Nuclear Information System (INIS)

Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride films grown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration profiles of these silicides have a maximum at the interface ...

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A composite film consisting of the mixed-addenda Keggin-type polyoxometalate alpha-K{sub 3}PMo{sub 3}W{sub 9}O{sub 40} (PMo{sub 3}W{sub 9}) and silver nanoparticles (AgNPs) was fabricated on quartz, silicon, and ITO by the layer-by-layer self-assembly method. The regular growth of the multilayer film was monitored by UV-vis spectroscopy, and the morphology was measured by atomic force microscopy (AFM). The multilayer film embedded by AgNPs exhibited the photo-luminescence ascribed to electronic transitions from excited states to d levels of the silver nanoparticles. The composite film also showed electrocatalytic activity towards reduction of NO{sub 2}{sup -}, H{sub 2}O{sub 2}, ClO{sub 3}{sup -}, BrO{sub 3}{sup -}, and IO{sub 3}{sup -} attributed to tungsten-centered and molybdenum-centered redox processes of PMo{sub 3}W{sub 9}.

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Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach ...

International Nuclear Information System (INIS)

Parameters of permanent magnets result from the combination of intrinsic properties such as saturation magnetization, magnetic exchange, and magnetocrystalline energy, as well as microstructural parameters such as phase structure, grain size, and orientation. Reduction of grain size into nanocrystalline regime (#approx# 50 nm) leads to the enhanced remanence which derives from ferromagnetic exchange coupling between highly refined grains. In this study the fundamental phenomena, quantities, and structure parameters, which define nanophase permanent magnets are presented and discussed. The theoretical considerations are confronted with experimental data for nanocrystalline Sm-Fe-N type permanent magnets. (author)

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Nanocrystalline zeolites with discrete crystal sizes of less than 100 nm have different properties relative to zeolites with larger crystal sizes. Nanocrystalline zeolites have improved mass transfer properties and very large internal and external surface areas that can be exploited for many different applications. The additional external surface active sites and the improved mass transfer properties of nanocrystalline zeolites offer significant advantages for selective catalytic reduction (SCR) catalysis with ammonia as a reductant in coal-fired power plants relative to current zeolite based SCR catalysts. Nanocrystalline NaY was synthesized with a crystal size of 15-20 nm and was thoroughly characterized using x-ray diffraction, electron paramagnetic resonance spectroscopy, nitrogen adsorption isotherms and Fourier Transform Infrared (FT-IR) spectroscopy. Copper ions were exchanged into ...

International Nuclear Information System (INIS)

Recent advances made in the area of amorphous and nanocrystalline alloys exhibiting high saturation inductions are reviewed. A new chemical composition was identified that achieves a saturation induction of 1.64 T in an iron-based amorphous alloy. This alloy, when used in electrical transformers, shows a much improved performance over the existing amorphous alloy. Nanocrystalline FeCoCuNbSiB alloys are found to have saturation induction levels reaching 1.7 T. These materials are suited for use in sensors and inductors carrying large currents. Some of these nanocrystalline alloys show a BH squareness ratio exceeding 90%, which can be utilized in pulse power devices. Recent developments in the applications of these materials are also pointed out.

International Nuclear Information System (INIS)

The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO_2, Si_3N_4 and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si_3N_4, but SiO_2 appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO_2 and Si_3N_4 films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films. (author).

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Aluminum-containing intergranular phases, forming intergranular films and secondary phase particles at triple-junctions in SiC hot-pressed with aluminum, boron, and carbon additions, were studied by transmission electron microscopy. Statistical high-resolution electron microscopy study of intergranular films indicated that a large fraction of the vitreous intergranular films in the s-hot-pressed SiC crystallized during postannealing in argon above 1000 C. However, brief heating to 1900 C indeed re-melted 25 percent of the crystallized intergranular films. The structural transitions were reflected in the statistical width distributions of the amorphous grain boundary layers. At triple-junctions, Al2O3, Al2OC-SiC solid solution, and mullite phases were newly identified. These phases,together with others reported before are represented in a quaternary phase diagram for 1900 C. It is proposed that a ...

Science.gov (United States)

We present computer modeling along with experimental data on the formation of sharp conical tips on silicon-based three-layer structures that consist of a single-crystal Si layer on a 1 {mu}m layer of silica on a bulk Si substrate. The upper Si layers with thicknesses in the range of 0.8-4.1 {mu}m were irradiated by single pulses from a KrF excimer laser focused onto a spot several micrometers in diameter. The computer simulation includes two-dimensional time-dependent heat transfer and phase transformations in Si films that result from the laser irradiation (the Stefan problem). After the laser pulse, the molten material self-cools and resolidifies, forming a sharp conical structure, the height of which can exceed 1 {mu}m depending on the irradiation conditions. We also performed computer simulations for experiments involving single-pulse irradiation of bulk silicon, reported by other groups. We discuss conditions under ...

International Nuclear Information System (INIS)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The ...

Energy Technology Data Exchange (ETDEWEB)

Laser-assisted processing techniques, utilized to produce fine, metal grid patterns for high-efficiency solar cells, are being investigated, developed, and characterized. The work performed in the third quarter of this contract is detailed here. A preliminary economic evaluation has yielded the conclusion that laser-assisted pyrolysis of spun-on silver neodecanoate is the most promising of all the metallization techniques being investigated in this contract. Early adhesion problems have been solved by optimizing deposition parameters. Linewidth studies have been carried out as a function of laser power, scan speed, and film thickness. Preliminary solar cells have been fabricated and characterized using this metallization scheme. Silver neodecanoate films have also been decomposed using a pulsed uv laser and metal mask. A detailed study of the various models of localized surface temperature rise in silicon due to laser ...

Energy Technology Data Exchange (ETDEWEB)

For a solar cell, in order to minimize the loss of incident light, transparent glass or plastic material is used at the incident part. When a solar cell is watched from the light incident part, a silicon base material is directly observed with either block or brown color only. This invention enables a solar cell to give brighter color on the incident surface by placing a reflective film which reflects only the light of specific wavelength, without reducing the efficiency of the solar cell. This reflective film consists of multi-layered dielectric with 12 layers and alternative combination of highly refractive and less refractive substances. Highly refractive layer is Y/sub 2/O/sub 3/ with refractive index 1.74 and the less refractive layer is SiO/sub 2/ with refractive index 1.45. (5 figs)

International Nuclear Information System (INIS)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10"1"7 to 3 x 10"1"9 cm"-"3. (Author).

British Library Electronic Table of Contents (United Kingdom)

This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77K to 400K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress.

Energy Technology Data Exchange (ETDEWEB)

This paper describes the experimental results of long-life solid lubricated ball bearings tested under high-vacuum of 10 exp -4 Pa, high-temperature of 300 C, and high-speed (9000 rpm) conditions. For full ball-type bearings, the thin soft metals, either Ag or Pb, which were coated on the races and balls, appeared to have good torque properties. However, the durability of such bearings was less than 300 hours. The transfer films from the lamellar solid MoS2 and metal composite retainers improved the torque and wear properties. For ceramic, i.e., silicon nitride, balls used with steel rings, wear occurred on the inner rings. All ceramic bearings with composite retainers showed improved torque and wear properties. 18 refs.

Energy Technology Data Exchange (ETDEWEB)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.

Energy Technology Data Exchange (ETDEWEB)

Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to ...

Energy Technology Data Exchange (ETDEWEB)

This report contains detailed information of the research program entitled "Development of Bulk Nanocrystalline Cemented Tungsten Carbide Materials for Industrial Applications". The report include the processes that were developed for producing nanosized WC/Co composite powders, and an ultrahigh pressure rapid hot consolidation process for sintering of nanosized powders. The mechanical properties of consolidated materials using the nanosized powders are also reported.

International Nuclear Information System (INIS)

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. The energy and flux of ...

British Library Electronic Table of Contents (United Kingdom)

In this study, the thermodynamic stability of the grain boundaries and the grain growth of nanocrystalline Palladium (Pd) at various temperatures were investigated. For this purpose, the Gibbs free energy curves of grain boundaries were plotted in terms of the excess volume by the use of the equation of state (EOS) and Song's thermodynamic models. The results showed that, according to the prediction of these models, the nanocrystalline growth in metals was stopped at the grain sizes less than the critical grain size. Also, the results of the temperature variations and its effect on the Gibbs free energy curves showed that by the increase of the temperature, the possibility for the stoppage of grain growth is facilitated and the critical grain size is increased. To investigate the validity ...

Energy Technology Data Exchange (ETDEWEB)

Laser-assisted processing techniques for producing high-quality solar cell metallization patterns are being investigated, developed, and characterized. A literature search was carried out on the various state-of-the-art laser-assisted techniques for metal deposition, including laser chemical vapor deposition and laser photolysis of organometallics, as well as laser-enhanced electroplating. The results of the literature survey are briefly summarized. Experiments were carried out on laser-enhanced electroplating. Deposition of metals by laser-assisted pyrolysis of a variety of metallo-organic inks and metal-bearing polymer solutions spun as films onto silicon wafers was carried out. A detailed study of the various models of localized surface temperature rise in silicon due to laser heating has been carried out. Progress is reported in fabricating laser-metallized solar cells with improved efficiencies. Cells fabricated are ...

Energy Technology Data Exchange (ETDEWEB)

We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on platinized silicon and LaNiO{sub 3}-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of {approx}960 and dielectric loss of {approx}0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of {approx}820 and dielectric loss of {approx}0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 x 10{sup 6} V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of {approx}8.1 x 10{sup -9} A/cm{sup 2} and mean breakdown field strength of 1.7 x 10{sup 6} ...

International Nuclear Information System (INIS)

New data about the structure of high-temperature resistant metalloceramic plasma sprayed coatings in micro and nano areas are presented. Application of the new instrumental methods: transmission electron microscopy combined with selected area electron diffraction mode is possible to obtain these data. The first layer in Ni based metallic bond coat shows nanocrystalline structure. External ceramic layer based on stabilised ZrO_2 is polycrystalline and contains both cubic and tetragonal crystalline phases. Local inhomogeneities in coatings phase composition are determined. (author)

Energy Technology Data Exchange (ETDEWEB)

We report the influence of a small quantity of Cl[sub 2], which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si[sub 2]H[sub 6], on both the epitaxial growth rate and the B-doping properties for each Si and Si[sub 1-x]Ge[sub x] film. The small quantity of Cl[sub 2] inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si[sub 1-x]Ge[sub x]-SEG using Cl[sub 2], that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced. (orig.)

Energy Technology Data Exchange (ETDEWEB)

By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.

Energy Technology Data Exchange (ETDEWEB)

Anti-reflective coatings made with Teflon AF2400 had the highest damage thresholds recorded for physical vapor deposited coatings at the Lawrence Livermore National Laboratory damage facility. Physical vapor deposited layers of Teflon AF2400, a perfluorinated amorphous polymer, maintained the bulk optical properties of a high transmittance from 200 nm to 1600 nm, and a low refractive index. In addition, the refractive index can be intentionally reduced by control of two common deposition parameters, deposition rate and substrate temperature. Scanning electron microscopy and nuclear magnetic resonance observations indicated that morphological changes caused the variations in the refractive index rather than compositional changes. The coatings adhered to fused silica and silicon wafers under normal laboratory handling conditions.

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL`s in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy`s National Photovoltaic Research Program plans.

Energy Technology Data Exchange (ETDEWEB)

Nanocrystalline processing by inert gas condensation has the inherent advantages of generating: (1) high surface area nanoclusters, (2) non-stoichiometric oxides, and (3) high dispersions of dopants. This approach is exploited in the synthesis of fluorite-structured catalysts for SO{sub 2} reduction by CO. Nanocrystalline CeO{sub 2{minus}x}, La-doped CeO{sub 2{minus}x}, and Cu-doped CeO{sub 2{minus}x} were produced by magnetron sputtering from a pure or mixed metal target, followed by controlled oxidation of the metallic clusters. The as-prepared doped and undoped nanocrystalline CeO{sub 2{minus}x} materials were found to be excellent catalysts for complete SO{sub 2} conversion to elemental sulfur. Undoped nanocrystalline CeO{sub 2{minus}x} enabled light-off at 460 C, a temperature {approximately} 120 C lower than that over polycrystalline CeO{sub 2}, which is a novel effective catalyst itself. The high ...

Energy Technology Data Exchange (ETDEWEB)

We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}

CERN Document Server

The combination of large thickness ($>3$ $\\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the first time. The nanoscale and the microscale have thus been blended together in sculptured thin films with transverse architectures. SiO$_x$ ($x\\approx 2$) nanowires were grown by electron--beam evaporation onto silicon substrates both with and without photoresist lines (1--D arrays) and checkerboard (2--D arrays) patterns. Atomic self--shadowing due to oblique--angle deposition enables the nanowires to grow continuously, to change direction abruptly, and to maintain constant cross--sectional diameter. The selective growth of nanowire assemblies on the top surfaces of both 1--D and 2--D arrays can be understood and predicted using simple geometrical shadowing equations.

International Science & Technology Center (ISTC)

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

Energy Technology Data Exchange (ETDEWEB)

There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the ...

International Nuclear Information System (INIS)

The concept of nanocrystal conversion chemistry, which involves the use of pre-formed nanoparticles as templates for chemical transformation into derivative solids, has emerged as a powerful approach for designing the synthesis of complex nanocrystalline solids. The general strategy exploits established synthetic capabilities in simple nanocrystal systems and uses these nanocrystals as templates that help to define the composition, crystal structure, and morphology of product nanocrystals. This article highlights key examples of 'conversion chemistry' approaches to the synthesis of nanocrystalline solids using a variety of techniques, including galvanic replacement, diffusion, oxidation, and ion exchange. The discussion is organized according to classes of solids, highlighting the diverse target systems that are accessible using similar chemical concepts: metals, oxides, chalcogenides, phosphides, alloys, intermetallic compounds, sulfides, and ...

British Library Electronic Table of Contents (United Kingdom)

In this work, a new sol-gel auto-combustion method has been performed to synthesize single phase nickel ferrite nanocrystalline powders by using n-cetyltrimethylammonium bromide, as a cationic surfactant. The gels were prepared from ferric and nickel nitrates and citric acid. Ammonia was used as pH adjusting agent as well. The effects of the surfactant on the after combustion calcination process and the reduction of the resulting powder crystallite size which affects the magnetic properties of the material were investigated by XRD and DTA/TGA techniques. The results showed that the ignition of the gels in air have a self-propagating behavior. Addition of surfactant to the starting solution affected the crystallite size of the synthesized powders and their phase constitution. The crystallit...

International Nuclear Information System (INIS)

The EXAFS-study (Fe, Sn and Ge K-edges) of disordered by mechanical activation binary supersaturated nanocrystalline solid solutions Fe-Al, Fe-Ge, Fe-Sn and Fe-Si is presented. The EXAFS-spectra are processed by solving the inverse binary problem, using the EXAFS-spectrum of the Fe K-edge only or combining the EXAFS-spectra on two K-edges, Fe and Ge or Fe and Sn. The parameters of partial correlation functions indicate chemical short-range ordering, high local static distortions in the lattice, increasing with metalloid content. The macrostructure of other type is forming through an initial, 'local' stage within the bcc lattice.

British Library Electronic Table of Contents (United Kingdom)

In the present work, bulk amorphous and nanocrystalline Al83Fe17 alloys were obtained by consolidation of mechanically alloyed powders. Mechanical alloying of Al-17% Fe powder mixture yielded powder with an amorphous structure. Thermal behaviour of the milling product was examined using differential scanning calorimetry. This investigation revealed that the amorphous phase crystallised above 380^oC. The amorphous powder was compacted under a pressure of 7.7GPa in different conditions: at 380^oC for 600s and at 1000^oC for 180s. Structural investigations of the bulk material revealed that the amorphous structure was retained after consolidation process applied at 380^oC. Compaction under high pressure at 1000^oC caused crystallisation of the amorphous phase and appearance of metastable nano...

British Library Electronic Table of Contents (United Kingdom)

Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

Abstract: We report for the selective-area chemical synthesis of semiconductor single-crystal organic nanowires of silver-tetracyanoquinodimethane (Ag-TCNQ). Straight and smooth Ag-TCNQ nanowires can be produced and patterned on micrometer and nanometer scale on silicon substrates covered with a thin layer of Ag film through the reaction of TCNQ and Ag in a simple gas-solid chemical reaction process. Ag-TCNQ nanowires are characterized by UV-vis, IR and Raman spectroscopy, respectively. The Ag-TCNQ nanowires grows preferentially along the [100] direction of strong - stacking of Ag-TCNQ molecules. Nanodevices based on these nanowires are fabricated using focus ion beam (FIB) technique. Electrical properties are characterized and I-V hysteresis is observed, which shows memory effect with electrical switching of three orders on-off ratio. These nanowires could be potential for use in optical storage, ultrahigh-density nanoscale memory and logic ...

Energy Technology Data Exchange (ETDEWEB)

The aim of this contract is to investigate, develop, and characterize laser-assisted processing techniques utilized to produce the fine-line, thin-metal grid structures that are required to fabricate high-efficiency solar cells. During the first quarter of this contract, a comprehensive literature search was carried out in the various state-of-the-art laser-assisted techniques for metal deposition, including laser chemical vapor deposition and laser photolysis of organometallics, as well as laser-enhanced electroplating. A compact system for the experiments involving laser-assisted photolysis of gas-phase compounds was designed and constructed. The work performed in the second quarter is detailed in this report. Metal deposition experiments have been carried out utilizing laser-assisted pyrolysis of a variety of metal-bearing polymer films and metallo-organic inks spun onto silicon substrates. Laser decomposition of spun-on silver neodecanoate ...

Energy Technology Data Exchange (ETDEWEB)

The personal neutron dosimetry becomes more important with the increasing use of nuclear and accelerator facilities. The solid state track detector, film badge and thermo-luminescent dosimeter have widely been used as passive-type personal neutron dosimeters, but the real-time neutron dosimeter is strongly needed. A real time personal dosimeter which could give neutron dose equivalent over wide energy range from thermal to 10 odd MeV by using two neutron sensors has been developed by our group. For practical commercial product, some changes from these prototype sensors have recently been done by Fuji Electric Co. Ltd. The purpose of this work is the final performance test of the dosimeter just before sale. We checked again about the sensitivity in the monoenergetic neutron field from 8 keV to 15 MeV and in the neutron fields around a few accelerator facilities. (author)

International Nuclear Information System (INIS)

Structural relaxation, crystallization and optimisation processes in soft magnetic amorphous alloys based on iron are examined by applying different experimental techniques: X-ray diffraction analysis, high-resolution electron microscopy, measurements of magnetic and electric properties (permeability, after-effect resistivity). The presented results are discussed in terms of annealing out of microvoids, formation of nanocrystalline phase and changes of effective magnetostriction constant. (author)

International Nuclear Information System (INIS)

It has been shown that mechanical milling of iron in water results in formation of nanocrystalline magnetite Fe3O4 with an average particle size of 0.6 ?m, saturation magnetization of 77 Am2/kg and coercivity of ?150 A/cm. Along with magnetite, an antiferromagnetic Fe-O phase (?10 wt%), which is an aggregate of small iron-oxygen clusters forms.

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

CERN Document Server

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

CERN Document Server

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

Energy Technology Data Exchange (ETDEWEB)

Laser-assisted processing techniques for producing high-quality solar cell metallization patterns have been investigated, developed, and characterized. During the early stages, preliminary investigations were carried out on a variety of promising laser-assisted metallization schemes, and the best of these was selected for further development. A comprehensive literature search initially yielded information on state-of-the-art laser-assisted techniques for metal deposition such as laser chemical vapor deposition and laser photolysis of organometallics, as well as laser-enhanced electroplating. Initial experiments on laser-enhanced electroplating yielded very promising results with linewidths as narrow as 25 ..mu..m and local plating speeds as high as 12 ..mu..m/s being achieved. Metal deposition experiments were carried out utilizing laser-assisted pyrolysis of a variety of metal-bearing polymer films and metallo-organic inks spun onto silicon ...

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.

International Nuclear Information System (INIS)

Nanocrystalline samples of Fe_8_0Mo_2_0 and Fe_5_0Mo_5_0 alloys were prepared by the mechanical milling method. The structure, lattice parameters, and crystallite size were determined by the X-ray diffraction. The magnetic properties of the milled products were determined by the Moessbauer spectroscopy. It was observed that in the case of the Fe_8_0Mo_2_0 alloy a solid solution of Mo in Fe was formed with the lattice parameters of the Fe increasing from 0.28659 nm to 0.29240 nm and the crystallite size decreasing from 250 nm to 20 nm. In the case of the Fe_5_0Mo_5_0 alloy there were no clear changes in values of the lattice parameters of Fe and Mo during the milling process, but the crystallite size decreased from 200 to 15 nm. Moessbauer spectra revealed different magnetic phases in the machanosynthesized Fe_Mo samples. In the case of the Fe_8_0Mo_2_0 alloy, the spectrum for the milled mixture indicated the formation of solid solution. In contrast, for the ...

Energy Technology Data Exchange (ETDEWEB)

This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

No abstract prepared.

International Nuclear Information System (INIS)

Formation of the soft magnetic nanostructure in amorphous Fe_1_4Ni_4_0Zr_7B_1_2 alloy due to heat treatment is studied by the Moessbauer, differential scanning calorimetry, and X-ray diffraction techniques. Annealing at temperatures 520-580 "oC leads to the formation of extremely soft nanocrystalline alloy as revealed by the rf-Moessbauer measurements. The superparamagnetic behaviour was observed for the alloy annealed at 620-640 "oC. At higher annealing temperatures good soft magnetic properties deteriorate. (author)

Science.gov (United States)

... Abstract : MANY THIN FILM ACOUSTO-OPTIC INTERACTION EXPERIMENTS FOR ... CONVERTERS, AND FOR FAST SWITCHES HAVE BEEN ...

Energy Technology Data Exchange (ETDEWEB)

Understanding the mechanical properties of biomedical devices is critical in predicting and preventing their failure in the body. Such knowledge is essential, for example, in the design of biomedical stents, which must undergo repeated strain over their ten year lifetimes without breaking. Computational models are used to predict mechanical response of a device, but these models are not complete; there are significant deviations from the predictions, especially when devices are subjected to repeated multi-axial loads. Improving these models requires comparisons with actual measurements of strained nitinol. Local measurements of the full strain tensor can be made using X-ray diffraction techniques, but they are currently limited to materials whose grain size is larger than the X-ray beam size or require several diffraction patterns produced by rotation of the sample. Nitinol stents are nanocrystalline, with grains smaller than any available X-ray beam. We present a ...

Energy Technology Data Exchange (ETDEWEB)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...

Energy Technology Data Exchange (ETDEWEB)

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

International Nuclear Information System (INIS)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

CERN Multimedia

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

International Nuclear Information System (INIS)

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

CERN Document Server

In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

Science.gov (United States)

... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

Energy Technology Data Exchange (ETDEWEB)

A major factor for the achievement of the desirable performance, efficiency and lifetime of flexible organic electronic devices is the optimization of the encapsulation layers that protect the device active layers by atmospheric gas molecule permeation. The active layers consisted of small molecule and/or polymer organic semiconductors as well as the organic conductors need to be encapsulated into a transparent medium that will provide the necessary protection and maintain their charge generation and transport characteristics. The encapsulation layers are generally consisted of inorganic thin films (silicon oxide-SiO{sub x} and aluminium oxide-AlO{sub x}) deposited onto the polymeric substrates, such as PolyEthylene Terephthalate (PET). In this work, in situ and real-time Spectroscopic Ellipsometry in the ultraviolet spectral region has been implemented in order to investigate the growth of inorganic SiO{sub x} and AlO{sub x} nano-layers onto ...

Energy Technology Data Exchange (ETDEWEB)

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, ...

International Nuclear Information System (INIS)

The optical pressure exerted o a thin film, which is locked in the evanescent field formed at the plane interface with a totally-reflected Gaussian beam, is investigated. Some calculations of the pressure on the film caused by the evanescent field are presented in the different conditions of film thickness, film position, incident angle and polarization of a gaussian beam. The results show that the pressure exertion on the thin film can change from pushing to pulling as the parameters are varied. In particular, we find that the direction of optical pressure can act oppositely at the different positions of the film surface in the evanescent field.

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

British Library Electronic Table of Contents (United Kingdom)

The K 2010 exhibition saw the introduction of PolyOne Corps OnCap Antifog Additive for polypropylene (PP) films, the first such additive for PP films that does not require corona treatment. According to the company, this new additive simplifies production of antifog films for the flexible food packaging industry, improving production efficiencies for both cast and blown film producers.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

British Library Electronic Table of Contents (United Kingdom)

The thermal stability of nanoscale grains in cryomilled aluminum powders containing 1% diamantane was investigated. Diamantane is a diamondoid molecule consisting of 14 carbon atoms in a diamond cubic structure that is terminated by hydrogen atoms. The nanostructures of the resulting cryomilled powders were characterized using both transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. The average grain size was found to be on the order of 22?nm, a value similar to that obtained for cryomilled Al without diamantane. To determine thermal stability, the powders were heated in an inert gas atmosphere at constant temperatures between 423 and 773?K (0.51T m to 0.83T m) for exposure times of up to 10?h. The average grain size for all powders containing diamantane was obse...

International Nuclear Information System (INIS)

A poly(ether urethane) (PEUR)/poly(ethylene oxide) (PEO)/SiO2 based nanocomposite polymer is prepared and employed in the construction of high efficiency all-solid-state dye-sensitized nanocrystalline solar cells. The introduction of low-molecular weight PEUR prepolymer into PEO electrolyte has greatly enhance the electrolyte performance by both improving the interfacial contact properties of electrode/electrolyte and decreasing the PEO crystallization, which were confirmed by XRD and SEM characteristics. The effects of polymer composition, nano SiO2 content on the ionic conductivity and I3- ions diffusion of polymer-blend electrolyte are investigated. The optimized composition yields an energy conversion efficiency of 3.71% under irradiation by white light (100 mW cm-2).

Energy Technology Data Exchange (ETDEWEB)

TiB{sub 2} appears to be a promising material for the wear protection in various tribological systems, e.g. the diecasting of Al. This study focuses on the development of titanium boride coatings deposited by PACVD, a deposition method which is most suitable for the coating of substrates with complex shapes. All layers analysed are very smooth and exhibit a quasi-amorphous fracture surface. XRD and TEM analysis indicate a nanocrystalline structure with grain sizes in the order of 2 nm. The diffraction patterns can well be correlated to titanium diboride. WDS reveals an over stoichiometric B/Ti ratio. The layer hardness reaches the value of 33 GPa and the critical load in scratch tests rises to 35 N. Neither 100Cr6 nor Al as a counterpart in pin-on-disk tests leads to wear of the coating. (orig.)

British Library Electronic Table of Contents (United Kingdom)

Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 ?C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.

Science.gov (United States)

Manufacture of cadmium sulfide thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of ...

International Nuclear Information System (INIS)

Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

Sputtering of glass coatings on cadmium sulfide thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

This paper reports that the point defect model for steady-state passive films formed anodically on metal s in aqueous environments has been extended to include irreversible dissolution of the film and the irreversible generation and annihilation of cation and oxygen vacancies at the metal/film and film/solution interfaces. THe model yields a number of diagnostic criteria that can be used to identify the majority (vacancy) charge carrier and to characterize the kinetic nature of the interfacial vacancy generation and annihilation processes. We use these criteria to show that the steady-state passive film that forms on nickel in acidic phosphate buffer solutions is a cation conductor and that cation transport from the metal to the solution involves irreversible ejection of cations from the film. On the other hand, the passive film that forms ...

International Nuclear Information System (INIS)

The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N _D) for the passive film is of the order of 10"2"1 cm"-"3 and decreases with increasing formation time and potential, indicating ...

Energy Technology Data Exchange (ETDEWEB)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

International Nuclear Information System (INIS)

Solid oxide fuel cell (SOFC) is a promising source of power generation in terms of conversion efficiency which is higher than the conventional one, as it is not limited by the Carnot efficiency. Theoretically, the SOFC have an efficiency of the order of 60-80 % but it is limited by the number of active side available for the reaction i.e. TPB (triple phase boundary) at the electrode-electrolyte interface which depends on the particle size of the materials employed during the fabrication of SOFC components (i.e. the method employed during the synthesis). Literally, there are several methods used in the syntheses of oxide materials such as conventional solid-state reaction, co-precipitation, hydrothermal rout, sol-gel and Glycine nitrate process (GNP) but among these GNP found to be effective over the other because of homogeneity, phase purity and smaller particle size of final product. In this work, the Nano-crystalline Ln_0_._6Sr_0_._4Co_0_._8Fe_0_._2O_3_-_#delta# ...

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

English Jul 2001 p. 143-144 China Liu Changlong Academia Sinica,

Science.gov (United States)

Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...

Energy Technology Data Exchange (ETDEWEB)

In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

International Nuclear Information System (INIS)

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

Energy Technology Data Exchange (ETDEWEB)

Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

International Nuclear Information System (INIS)

Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).

KoreaScience (Korea)

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KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Only two years ago, plastic film recycling was considered an onerous task. Different resins had to be identified, colors had to be separated, and minute contaminants had to be weeded out almost by hand to produce a quality material. But the tide of plastic film recycling is changing now that new technologies have emerged and more organized collection infrastructure have been developed. Today, plastic film recycling maintains a lucrative market for those with the right combination of equipment and know-how.

Science.gov (United States)

No abstract prepared.

KoreaScience (Korea)

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J-STORE (Japan)

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J-STORE (Japan)

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Energy Technology Data Exchange (ETDEWEB)

Short communication.

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Passive films formed on stainless steels in a borate buffer solution (pH 9.2) have been investigated by capacitance measurements and photoelectrochemistry. The study was carried out on films formed on AISI type 304 and 316 stainless steels and high purity alloys with differing chromium, nickel, and molybdenum contents. Complementary research by Auger analysis shows that the passive films are composed essentially of an inner chromium region in contact with the metallic substrate and an outer iron oxide region developed at the film/electrolyte interface. The semiconducting properties of the passive films are determined by those of the constituent chromium and iron oxides which are of p-type and n-type, respectively. Thus the influence of the alloying elements on the semiconducting properties of the passive films is explained by changes in the electronic structure ...

Energy Technology Data Exchange (ETDEWEB)

X-Ray reflectivity has been used to investigate the microstructural changes of solution-cast stearic acid films before and after immersion in CoCl{sub 2} solutions. Before immersion, the films possess a well-defined layered structure with an interlayer spacing of 4.01{+-}0.05 nm. After the films were immersed in the CoCl{sub 2} solutions, a new set of equidistant diffraction peaks emerge, the corresponding interlayer spacing of which is 5.13{+-}0.05 nm. The X-ray photoelectron spectra of the films indicate the existence of cobalt ions inside the films after immersion. It is concluded that the permeation of the cobalt ions into the hydrophilic interlayer causes the stearic acid molecules to reorient perpendicular to the films, resulting in the increase of interlayer spacing and the roughening of the interfaces.

Energy Technology Data Exchange (ETDEWEB)

Passive films were formed on a high purity Fe-23 Cr alloy in acid sulfate solutions in the presence and absence of chloride ion. The resulting film composition was investigated by Auger depth profiling. The passivated samples were exposed to a 1M NaCl solution at a constant potential slightly above the critical pitting potential, and the current-time transient was measured in order to compare the relative stability of the different films. The results obtained suggest that the formation conditions influence the chloride content of the passive film and the breakdown behavior. Passive films formed in the presence of chloride contain and are slightly less stable towards breakdown. No chloride was found in films formed in sulfate and subsequently exposed to chloride well below the pitting potential.

British Library Electronic Table of Contents (United Kingdom)

The physical and antioxidant properties of alginate biodegradable film incorporating white, red and extruded white ginseng extracts were investigated. No differences in moisture contents of all alginate film samples were noticeable (p>0.05) except those film samples incorporated without ginseng extract, which had the highest moisture content. The addition of ginseng extract to alginate film decreased tensile strength and elastic modulus (p<0.05) but increased the percent elongation at break. The presence of extracts did not significantly affect the water vapor permeability of the film samples. Alginate film containing extruded white ginseng extract at a barrel temperature of 130degreeC presented the highest (61.12%) free-radical scavenging activity against the 2,2-diphenyl-1-picryhydrazyl ...

International Nuclear Information System (INIS)

New physical objects, ispalators based on free soap films, exhibit persistent flows of the soap solution in open and closed volumes in air with additions of gases of the C_8F_1_8 type (p = 20 Torr) at temperature drops on the films of the order of tenths and hundredths of kelvin. The flows move continuously at a velocity of 5 - 20 cm s"-"1. It is found that the parts of an inclined ispalator film show anomalous behaviour upon heating: their weight increases and they move downward over the film, whereas the unheated parts of the film move upward. Continuous radial vortex flows accompanied by the formation and washing of the regions of a thin black film are observed on circular films in closed volumes upon their uniform external cooling by evaporating water for 5 - 10 hours. The rapid flows make film ispalators the ...

International Nuclear Information System (INIS)

A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence x-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films. (author)

International Nuclear Information System (INIS)

For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are ...

International Nuclear Information System (INIS)

The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

Science.gov (United States)

Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

International Nuclear Information System (INIS)

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

Energy Technology Data Exchange (ETDEWEB)

The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

International Nuclear Information System (INIS)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

Energy Technology Data Exchange (ETDEWEB)

Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the C{sub sc}{sup -2} vs. V{sub m} plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the C{sub sc}{sup -2} vs. V{sub m} plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of ...

Energy Technology Data Exchange (ETDEWEB)

A theoretical model, which describes subband gap photoexcitation involving localized electronic states, was developed. The escape probability of a charge carrier trapped in a localized state is considered via Poole-Frenkel, direct tunneling, or phonon-assisted tunneling processes, as competing escape mechanisms. Photoelectrochemical experiments were performed on the passive films formed on zirconium and amorphous iron-zirconium alloys and on pure HfO/sub 2/ films and HfO/sub 2/ films implanted with varying concentrations of xenon. These films were found to possess some degree of disorder depending on the substrate, the thickness of the film, and the extent of implantation. The spectral dependence of the photocurrent in all of the films studied is considerably different from what was found for crystalline passive films. The potential ...

Energy Technology Data Exchange (ETDEWEB)

A radio frequency sputtering apparatus with a pair of targets has been developed for depositing a film of uniform thickness onto a complex-geometric specimen such as the retainer of a ball bearing. The deposition characteristics of the apparatus were compared with those of the conventional sputtering apparatus. Lubrication properties of MoS/sub 2/ films made by these devices were also compared under a variety of conditions. Finally, friction and wear of MoS/sub 2/ films applied to angular-contact type ball bearings of 20 mm bore were studied in air, nitrogen and vacuo. The two-target sputtering has an advantage mentioned above. However, the films deposited by the method exhibited a rather short wear life because of the temperature rise of the substrate during ion bombardment and during the sputtering process. This temperature dependence was observed in films on those substrates that ...

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the ...

International Nuclear Information System (INIS)

The composition of sputter-deposited HgS films was determined by electron microprobe analysis. From the relative x-ray intensity as a function of film thickness, the depth of the ionizations that produce SK sub(#alpha#) and HgM sub(#alpha#) was found to be approximately 0.65 #mu#m at an accelerating voltage of 15 kV. This value agreed well with a value calculated from Castaings' empirical law after absorption correction. The determination of film composition was limited to sufficiently thicker films than this critical value, usually 1 - 2 #mu#m thick. The relation between the conposition of bulk standard determined by chemical analysis and the x-ray intensity ratio was used for the correction of film composition. The results showed that the crystal structure of HgS films was independent of the composition, i.e., the growth of metastable #betta#-HgS ...

International Nuclear Information System (INIS)

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...

Energy Technology Data Exchange (ETDEWEB)

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...

International Nuclear Information System (INIS)

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...