Medium-density polyethylene/multiwall carbon nanotube (MDPE/MWCNT) nanocomposites were produced by a mechanical milling method using a high-energy ball mill. The MDPE and MWCNTs were added to the ball mill at a constant 20:1 weight ratio of ball/powders and milled for 10 h to obtain polyethylene matrix nanocomposites reinforced with 0.5, 1, 2.5, and 5 weight percent of MWCNTs. To clarify the role of both MWCNT content and milling time on the morphology of MDPE, some nanocomposite samples were investigated by using a scanning electron microscope. To evaluate the role of milling on the microstructure of the nanocomposites, very thin films of MDPE/MWCNTs were prepared and studied by transmission electron microscopy. Thermal behavior of these nanocomposites was investigated by using differenti...
Cellulose whiskers and microfibrillated cellulose (MFC) were extracted from the rachis of date palm tree and characterized. These cellulosic nanoparticles were used as reinforcing phase to prepare nanocompositefilms using latex of natural rubber as matrix. These films were obtained by the casting/evaporation method. The properties of the ensuing nanocompositefilms were investigated using differential scanning calorimetry, toluene and water uptake experiments, dynamic mechanical analysis and tensile tests. The stiffness of the natural rubber was significantly increased above its glass-rubber transition temperature upon nanoparticles addition. The reinforcing effect was shown to be higher for nanocomposites with MFC compared to whiskers. It was ascribed to the higher aspect ratio and possi...
Abstract Nanocomposites based on SnO2 with carbon scaffold were used as highly porous anode films on Ni substrates. The films were obtained by in situ deposition of the particles without any binder or excess carbon black avoiding any secondary treatment. Compared to similarly prepared uncoated SnO2 nanoparticles as well as conventionally prepared powder samples the capacity loss of the in situ deposited nanocompositefilms is significantly reduced. Thus, this newly developed anode material combined with in situ film formation is a promising approach for high capacity anodes in Li-ion batteries. SEM-micrograph of a SnO2/C nanoparticle film.
Novel fluoroalkyl end-capped vinyltrimethoxysilane oligomer/hydroxyapatite (HAp) nanocomposites were prepared by the reaction of calcium nitrate tetrahydrate and phosphoric acid in the presence of the corresponding oligomer. These fluorinated oligomer/HAp composites thus obtained are nanometer size-controlled fine particles (83-173 nm), and were found to exhibit good dispersibility in methanol, ethanol, and isopropyl alcohol. These fluorinated HAp nanocomposites were applied to the surface modification of glass and poly(methyl methacrylate) (PMMA) to exhibit good hydro- and oleophobic characteristics imparted by fluorine on their surface. In addition, the surface structural changes of the modified polyethylene terephtalate and PMMA films treated with these fluorinated nanocomposites before...
Direct electrochemistry and electrocatalysis of catalase (Cat) was studied based on a nano-compositefilm consisting of amine functionalized graphene and gold nanoparticles (AuNPs) modified glassy carbon electrode. Graphene was synthesized chemically by Hummers and Offeman method and then was functionalized with amino groups via chemical modification of carboxyl groups introduced on the graphene surface. The nano-compositefilm showed an obvious promotion of the direct electron transfer between Cat and the underlying electrode, which attributed to the synergistic effect of graphene-NH2 and AuNPs. The resultant bioelectrode retained its biocatalytic activity and offered fast and sensitive H2O2 quantification. Under the optimized experimental conditions, hydrogen peroxide was detected in the...
The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron filmsgrown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron filmsgrown on paramagnetic tungsten (110) shows that the 2D ...
Abstract A series of polypropylene carbonate (PPC)/ZnO nanocompositefilms with different ZnO contents were prepared via a solution blending method. The morphological structures, thermal properties, oxygen permeability, water sorption, and antibacterial properties of the films were investigated as a function of ZnO concentration. While all of the composite films with less than 5 wt % ZnO exhibited good dispersion of ZnO in the PPC matrix, FTIR and SEM results revealed that solution blending did not lead to a strong interaction between PPC and unmodified ZnO. As such, poor dispersion was induced in the composite films with a high ZnO content. By incorporating inorganic ZnO filler nanoparticles, the diffusion coefficient, water uptake in equilibrium, and oxygen permeability decreased as the ...
A method for estimating the form of magnetic nanoparticles in composite film structures based on the observation of ferromagnetic resonance phenomenon is offered. Within the model of the effective medium, an explanation is given for experimentally observed concentration and temperature dependences of resonant fields for composite nanosystem (Co45Fe45Z10) f +(Al2O3)100?f .
DescriptionThe objective is to exploit the use of wheat as an industrial raw material and understand the effect of material variation in wheat starch and flour on final material properties for food packaging applications. The project will focus on property enhancement in terms of stiffness, strength, toughness, moisture barrier resistance, transparency, ageing resistance, microbial stability and biodegradability of starch-based packaging materials made by sheet extrusion and thermoforming processes, in ord [continued...
The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.
This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}
Abstract Aims: To develop a new nano composite of multi walled carbon nanotubes (MWNTs) with enhanced antimicrobial activity. Methods and Results: A novel antimicrobial nanocomposite [MWNT epilson polylysine (MEPs)] was synthesized via covalent attachment of epilson polylysine on MWNTs with hexamethylene diisocyanate (HDI) as the coupling agent. UV visible spectra and Fourier transform infrared spectra (FT IR) investigations indicate that MEPs is stable, with epilson polylysine leaching effectively eliminated. When compared to MWNTs, the new nano composite MEPs exhibits enhanced antimicrobial activities. In 20 mg l 1 suspensions, significant increases of 72 1, 64 5 and 69% against Escherichia coli, Pseudomonas aeruginosa and Staphylococcus aureus can be observed. The deposited film of MEPs...
Some results and experimental procedures of laboratory are reported in the frame of researches conducted for the development of new nanostructured composite materials. These new materials, which are constituted by an organic phase: the polymer and an inorganic phase: the silicate, are being strongly investigated nowadays so it is expected that they could provide, among other, better electrical insulation properties and flame-delay in electrical and electronic applications. The laboratory experimental work has been developed from two families of polymers, thermoplastics and thermosets and clays silicates providing lamellar type. There are now some preliminary results, such as obtaining thin films of these nanocomposite materials, their complete characterization by X-ray diffraction, scanning microscopy and thermogravimetric analysis, they do well to wait for future research activities. (author)
A superhydrophobic SiO2/nylon 6,6 nanocomposite coating was fabricated by a facile casting process. Compared with the intrinsically hydrophilic pure nylon 6,6, the as-prepared coating displayed a superhydrophobic property in the pH range from 1 to 14. It was also found that the resulting water contact angles of the as-prepared surface were always larger than 159?, but the sliding angles had an obvious decrease from about 33.4??1? as the content of SiO2 nanoparticles increased. In addition, a transition from the transitional superhydrophobic state between Wenzel?s and Cassie?s state to the Cassie?s state was observed.
Graphite fluoride (CF{sub x}) is investigated as an additive for WS{sub 2} thin films to reduce its sensitivity to moisture. The films are grown onto hardened 440C stainless steel disks by pulsed laser deposition using the 248 nm line from an excimer laser. Substrate temperature and additive concentration are varied to control film chemistry and crystal structure. The effect of relative humidity (i.e., < 1 to 85% RH) on friction is evaluated. Coatings grown at RT from targets with a low concentration of CF{sub x} exhibit ultra-low friction (ULF) behavior in dry air (i.e., {mu} {<=} 0.01), but friction increases with RH. Mechanisms for the ULF behavior are proposed which suggest that further reductions in friction are possible. Filmsgrown at 300 C or with higher concentrations of CF{sub x} are relatively insensitive to humidity, but ...
Thin films (1-10 ?m thickness) of nanocomposites (NC) based on organic coordinated compound (OCC) Eu(TTA)2(Ph3PO)2NO3 (where TTA is thenoyl trifluoroacetonate (C8H5F3O2S), Ph3PO - triphenylphosphine (C6H5PO) and polymer-polyvinylpyrrolidone ((C6H9NO)n) (PVP)) were obtained by chemical methods and with different molar ratios into organic polymer matrix. NC have been characterized by measurements of optical transmission, excitation spectra of photoluminescence (PL) and photoluminescence of NC at different concentrations of Eu(TTA)2(Ph3PO)2NO3 in NC. In the optical transmission of NC, the characteristic parameters of NC such as threshold absorbance, dependence on the concentration of the organic coordinated compound in NC, etc., have been determined The displacement of threshold absorption to infrared is observed with increasing of the concentration of the coordination material in NC. The excitation spectrum of photoluminescence of NC led the ...
The light-emitting properties of cubic silicon carbide filmsgrown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...
Epitaxial filmsgrown pseudomorphically on substrates provide a way to stabilise non-equilibrium structures of materials. Obviously, there always is a certain lattice misfit between substrate and film material in its bulk equilibrium structure. In the pseudomorphic regime, this misfit can either lead to the growth of films in a strained bulk structure or even yield structures that are not stable in the bulk. Large misfits do not necessarily imply large lateral stress. Theory can help to predict e.g. geometry, stress and magnetic properties of pseusomorphically grown metal films. In this work, we considered the fcc-bcc epitaxial Bain path of 3d, 4d, and 5d transition metals, which provides a reasonable description of tetragonally distorted films on substrates. We carried out density functional calculations in the implementation of the full ...
In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.
Direct electrochemistry and electrocatalysis of catalase (Cat) was studied based on a nano-compositefilm consisting of amine functionalized graphene and gold nanoparticles (AuNPs) modified glassy carbon electrode. Graphene was synthesized chemically by Hummers and Offeman method and then was functionalized with amino groups via chemical modification of carboxyl groups introduced on the graphene surface. The nano-compositefilm showed an obvious promotion of the direct electron transfer between Cat and the underlying electrode, which attributed to the synergistic effect of graphene-NH2 and AuNPs. The resultant bioelectrode retained its biocatalytic activity and offered fast and sensitive H2O2 quantification. Under the optimized experimental conditions, hydrogen peroxide was detected in the concentration range from 0.3 to 600 ?M with a detection limit of 50 nM at S/N = 3. The biosensor exhibited some ...
Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] filmsgrown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single ...
During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...
The Heusler alloy Ni{sub 2}MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si{sub 3}N{sub 4} membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the filmsgrown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR). The almost perfect lattice match between InAs and Ni{sub 2}MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam ...
Emeraldine base (EB) polymer?ZnO nanoparticles composite films has been synthesized by solution casting technique on ITO-coated glass substrate and characterized by XRD, FTIR and TEM for their structure and morphology. Dielectric behaviour of these composite films has been investigated in the very low frequency region to medium frequency region (1?kHz?1?MHz). The dielectric constant of the composite with 30% nanoparticles is almost one-tenth of the pure EB. The dielectric value becomes constant in the frequency region greater than 400?kHz. The change in dielectric behaviour of the composite is explained on the basis of multilayered interface formed between the ZnO nanoparticles and emeraldine chains. Nanoparticles have high energy surface which is responsible for the decrease of free volum...
Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide filmsgrown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both ...
A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at ...
The thermal stability of low-friction Me-C/a-C:H coatings is important for their potential applications in the tool and automotive industry. Recently we showed that CrC _x/a-C:H coatings prepared by unbalanced magnetron sputtering of a Cr target in Ar + CH_4 glow discharges exhibit a nanocomposite structure where metastable fcc CrC nanocrystals are encapsulated by an a-C:H phase. Here, we present the structural evolution of these nanocomposite CrC/a-C:H coatings during annealing. High-temperature X-ray diffraction in vacuum and differential scanning calorimetry (DSC) combined with thermo-gravimetric analysis in Ar atmosphere indicate decomposition of the formed metastable fcc CrC phase and subsequent formation of Cr_3C_2 and Cr_7C_3 and structural transformation of the a-C:H matrix phase towards higher sp"2 bonding contents at temperatures above 450 deg. C. Combined DSC and mass spectrometer analysis as well as elemental profiling after ...
In the present work, a new kind of myoglobin (Mb)/Au nanoparticles composite film was fabricated on pyrolytic graphite (PG) electrodes. Oppositely charged chitosan (CS) and silica (SiO(2)) nanoparticles were alternately adsorbed on the PG surface by the electrostatic interaction between them, forming {CS/SiO(2)}(5) layer-by-layer films. Mb and HAuCl(4) in solution were then simultaneously loaded into {CS/SiO(2)}(5) films. The loaded Au(III) in the films were electrochemically reduced into Au nanoparticles, forming nanocompositefilms, designated as {CS/SiO(2)}(5)-Mb-Au. Various techniques such as cyclic voltammetry (CV), square wave voltammetry (SWV), quartz crystal microbalance (QCM), electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis were used to characterize the ...
Structural studies of Ni/Cu multilayers grown by electro-deposition technique under different electro-chemical conditions have been carried out using specular and off-specular neutron reflectometry techniques at room temperature. The specular reflectivity measurements give values of layer thickness, density and interface roughness for these two films. The Off-specular reflectivity measurements indicate different interface morphology of the two films.
High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current ...
There has been considerable interest in producing and studying nanoparticle materials because of the effect of size on their structure, physical and chemical structure. Most studied nanoparticle semiconductors belong to the II-VI group, as they are relatively easy to synthesize and are generally prepared as particulates or in thin film form. Among II-VI compounds, CdS is one of the most studied materials. There are different ways to synthesize CdS nanoparticles such as colloidal particles, chemical decomposition, sol-gel, gas evaporation, magnetron sputtering, electrostatic deposition, and etc. {gamma}-irradiation is one of the effective methods for synthesis of nanomaterials. These nonomaterials have been extensively used in the preparation of nanocrystalline metals, metal oxides, and metal-polymer composites. However, The preparation of CdS nanoparticle and CdS/ polyacrylonitrile nanocomposite by {gamma}-irradiation method at room temperature ...
LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.
Heusler films with L2_1 and B2 structure are deposited simultaneously on amorphous carbon films, Si(100) surfaces, and in situ cleaved InAs(110) surfaces by coevaporation of Ni and the alloy MnIn. Morphology, structure, and stoichiometry are investigated with transmission-electron microscopy, electron diffraction, and X-ray spectroscopy. The almost perfect lattice match supports highly oriented growth of Ni_2MnIn on InAs, which is proven by electron diffraction under grazing incidence. The electrical resistivity of thin films on Si show metallic behavior. At temperatures of liquid helium point-contact Andreev reflection spectroscopy is performed on filmsgrown on Si(100) and in situ cleaved InAs(110) surfaces yielding spin polarizations comparable to the ones of Fe, Ni, Co, and permalloy (Ni_8_0Fe_2_0).
In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.
The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical ...
Graphical abstract: Ordered mesoporous organic-inorganic composite film has been achieved by sol-gel and spin-coating techniques. We believe that the mesoporous composite films have a potential application as a protect coating of bipolar plate material. Display Omitted Research highlights: ? Ordered mesoporous composite film was deposited on the 304 stainless steel. ? This composite film exhibited excellent protective performance in 0.5 M H_2SO_4. ? The film exhibited a high surface tension with water contact angle close to 90"o. - Abstract: The organic-inorganic composite film was deposited on the 304 stainless steel as bipolar plate material for proton exchange membrane fuel cells by spin-coating method. As shown by XRD, N_2 adsorption-desorption and TEM, the composite films exhibit ordered mesoporous structures. The corrosion tests in 0.5 ...
Dye-sensitized solar cells (DSSCs) based on anatase TiO2 hollow spheres (TiO2HS)/multi-walled carbon nanotubes (CNT) nanocompositefilms are prepared by a directly mechanical mixing and doctor blade method. The prepared samples are characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, UV-vis absorption spectroscopy and N2 adsorption-desorption isotherms. The photoelectric conversion performances of the DSSCs based on TiO2HS/CNT composite film electrodes are also compared with commercial-grade Degussa P25 TiO2 nanoparticles (P25)/CNT composite solar cells at the same film thickness. The results indicate that the photoelectric conversion efficiencies () of the TiO2HS/CNT composite DSSCs are dependent on CNT loading in the electrodes. A small amou...
Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell ...
Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin filmsgrown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...
Surface oxide films were grown on 99.99% copper and brass (copper-zinc alloy, Cu77Zn21Al2) in 0.1 mol L{sup -1} borax solution at open circuit potential and were characterized using various experimental techniques. The composition of the passive films formed in situ on the different materials was studied using differential reflectance spectroscopy. The thickness of the oxide layers on copper and brass was compared by chronopotentiometric curves and potentiodynamic reductions. The electrical properties of each oxide were analyzed by means of electrochemical impedance spectroscopy. Their influence on the oxygen reduction reaction was also investigated using voltammetry hydrodynamic tools such as the rotating disk electrode. The results show that the incorporation of Zn to Cu in brass changes the composition and the thickness of the surface film. The filmsgrown on ...
In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical ...
We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on platinized silicon and LaNiO{sub 3}-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of {approx}960 and dielectric loss of {approx}0.04 on the PLZT filmgrown on Pt/Si substrates, and relative permittivity of {approx}820 and dielectric loss of {approx}0.06 on the PLZT filmgrown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 x 10{sup 6} V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of {approx}8.1 x 10{sup -9} A/cm{sup 2} and mean ...
Development of electronic devices with better performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method for embedding these components within a PWB. We have deposited high-permittivity ferroelectric lead lanthanum zirconate titanate (Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub x}, PLZT 8/52/48) films on base metal foils by chemical solution deposition. These prefabricated capacitor sheets can be embedded into PWBs for power electronic applications. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was applied by chemical solution deposition on nickel foil before the deposition of PLZT. With a {approx} 0.7-{micro}m-thick ferroelectric PLZT filmgrown on LNO-buffered ...
Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.
Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grownfilms were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.
In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffraction (XRD) analyses. The optical absorption coefficient ? of this indium sulfide film has been deduced from reflectivity R(?) and transmission T(?) measurements. The fit of the curve representing ?(h?) suggests that the ?-In2S3 has an indirect bandgap of 2.01?eV. Density functional theory (DFT) calculations are performed on this indium sulfide compound, using TB-LMTO code. Through these band structure investigations, an indirect bandgap is predicted as observed experimentally. The top of the valen...
GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles ...
GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.
In this work we investigate an iron oxide thin filmgrown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic ...
Purpose - This paper aims to describe the technology and applications of nanocomposite materials. Design/methodology/approach - This paper discusses products, applications and technological developments in polymer, ceramic and metal nanocomposites. It concludes with a brief consideration of electronic component applications. Findings - It is shown that polymer nanocomposites and the materials used in their production are commercially available and finding applications in several industries, including automotive, military, food, electronics and leisure, due to their enhanced mechanical, electrical and thermal properties. Ceramic and metallic nanocomposites are at an earlier stage of development and a critical issue to resolve is optimising the dispersion of nanomaterials in the matrices. Pa...
The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation ...
The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the ...
The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in ...
The transport properties of a 'thin' polycrystalline diamond film are analyzed after the sample exposure to 8.06-keV x-ray radiation. Structure and morphology of the as-grownfilm have been evaluated by Raman, x-ray diffraction, and scanning electron microscopy techniques. The transport properties have been investigated by measuring dark current-voltage characteristics in the temperature range of 60 to 360 K. Ohmic transport has been evidenced on the as-grownfilm up to 1.16x10"5 V/cm. After irradiation, nonlinear contributions to the dark current have been evidenced and related to field-assisted thermal ionization of traps. Below 200 K, hopping mechanisms have been observed. Correlations have been found among x-ray irradiation, density of traps involved in the transport processes, and the nonhomogeneous nature of the sample. A simple model of the grain boundary structure is ...
Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8mA, and a slow photoresponse with a rise time of 5min and a decay time of 7min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the d...
Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)
An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin filmsgrown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.
The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs filmsgrown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.
The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed ...
The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and doped GaP single crystals grown over 40 ...
In this study, WO{sub 3} thin films were grown on glass substrates using an aqueous solution containing tungstate (NH{sub 4}){sub 2}WO{sub 4} as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at T{sub s} = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of ...
In this study, WO3 thin films were grown on glass substrates using an aqueous solution containing tungstate (NH4)2WO4 as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at Ts = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T(?) and reflectance R(?) ...
Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were ...
We synthesized Fe3O4Gg nanocomposites through a combination of solvothermal, hydrothermal, and chemical redox reactions. Characterization of the resulting samples by X-ray diffraction, Fourier-transform infrared spectroscopy, field-emission scanning and transmission electron microscopy, and magnetic measurement is reported. Compared to Fe3O4g nanocomposites, the Fe3O4Gg nanocomposites showed enhanced antibacterial activity. The Fe3O4Gg nanocomposites were able to almost entirely prevent growth of Escherichia coli when the concentration of Ag nanoparticles was 10mg/mL. Antibacterial activity of the Fe3O4Gg nanocomposites was maintained for more than 40h at 37^oC. The intermediate carbon layer not only protects magnetic core, but also improves the dispersion and antibacterial activity of the...
Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride filmsgrown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration profiles of these silicides have a maximum ...
We have grown crack-free antiferroelectric (AFE) Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, E{sub AF} = 260 kV cm{sup -1}, and the reverse phase transition field, E{sub FA} = 220 kV cm{sup -1}, were measured at room temperature on a {approx}1.15 {micro}m thick PLZT filmgrown on ...
Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.
The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...
In this study, SnO{sub 2} thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (T{sub s} = 440 {sup o}C). The precursors were methanol CH{sub 4}O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity {psi}{sub AB}. The obtained value: {psi}{sub AB} {approx} 23.4 m{sup 3} s{sup -1} helped situating the performance of the as-grown SnO{sub 2} compound among most known PV-T oxides like ZnO and TiO{sub 2}.
In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.
Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.
Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.
The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, i.e., position of particles (e.g., atoms or molecules) and their interatomic ...
The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide filmsgrown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.
The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide filmsgrown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).
Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).
A 15-nm lithium fluoride (LiF) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions. The effect is more pronounced at low substrate temperatures, nucleation density being 10 times higher at {approx} 80 {sup o}C. The effect is ascribed to the ionic chemical nature of LiF, the low work function material used in organic electronic devices, and we propose its use for micro patterning crystalline Si regions in otherwise amorphous Si film.
The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible ...
Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant {tau} obtained from the curve fitting represents the ...
Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant #tau# obtained from the curve fitting represents the ...
The growth of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films on top of Pt electrode substrates is an important issue for the fabrication of ferroelectric based memories. In a recent publication, SBT thin filmsgrown using seeded and unseeded procedures were studied by PIXE and RBS. Difficulties and misfits found in the comparison of results from both techniques were, at that time, overcome by physical considerations. These, although not rendering interpretation impossible, left out the possibility of understanding the exact nature of the differences between the interface behavior in each case. In the present work it is shown that the reanalysis of the same data using the recently developed RBS-PIXE simultaneous and self-consistent calculation present in NDF leads to stronger conclusions on the solid state reaction occurring during the deposition stage for both types of samples. Allowing for the occurrence of solid state reactions ...
The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl2/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, Eg, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl2/treatment at 400 C for 30 min respectively. A progressive sharpening of the absorption edge upon heat ...
There has been a growing interest in new laser systems for use at mid-infra-red wavelengths, driven by requirements for a number of diverse applications. Developments in mid-IR coating technology are following three major thrusts. In the first, the potential of ion-assisted process is being exploited and the technology is already becoming well established in the optical coating industry. In the second, the benefits of using gas-phase precursors are being explored, driven by the potential of avoiding the generation of second phase inclusion in the coatings with associated reduction in laser damage threshold. Research is also addressing the use of nanocomposite materials with an engineered microstructure to produce coatings with dielectric properties of choice. This paper presents a review of progress in some of these areas with special emphasis on the comparison of the properties of materials at DF laser wavelengths. Evidence is presented which suggests that laser ...
Functionalizing nanoparticle surfaces is essential for achieving homogeneous dispersions of monodisperse particles in polymer nanocomposites for successful utilization in engineering applications. Functionalization reduces the surface energy of the nanoparticles, thereby limiting the tendency to agglomerate. Moreover, reactive groups on the surface can also participate in the polymerization, creating covalent bonds between the inorganic and organic phases. In this paper, a fluidized bed inductively coupled plasma (FB-ICP) reactor is used to break apart the agglomerates and functionalize commercial TiO2 nanoparticle powders in a batch of several grams. The fluidized bed could be implemented into a continuous flow reactor, potentially making this a viable method to treat larger quantities of commercial powders. The particles are treated with acrylic acid (AA) and tetraethylorthosilicate (TEOS) plasma and the functionalized particles were collected separately from ...
A tri-functional polyhedral oligomeric silsesquioxane (POSS) based silane precursor R_xR_yR_z(SiO_3_/_2)_n (x + y + z = n = 6, 8, 10, ...) bearing 3-(N-(3-triethoxysilylpropyl)ureido)propyl, isooctyl and perfluoropropyl groups was synthesized and investigated as corrosion protective coating for AA 2024 alloy. Infrared reflection-absorption (IR RA) combined with X-ray photoelectron spectroscopy and atomic force microscopy provided information about partial self-assembling of coatings having a fluorine enriched upper layer with a low surface energy (#gamma#"t"o"t = 12.37 mN/m). The structural changes that accompanied corrosion produced under chronocoulometrical conditions were assessed from ex-situ IR RA spectra. A new band at 1690-1700 cm"-"1 appeared above the corrosion potential, and was assigned to the formation of amidonium ions and consequent relaxation of urea-urea associations.
Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively ...
We report a new method of generating nano and micro patterns using focused ion beam (FIB) induced adhesion. The method utilizes selective irradiation of thin metallic filmsgrown on substrates by focused ion beam followed by peel off. After peel off of the irradiated thin film it is observed that the ion beam scanned portions are retained on the substrate, creating nano and micro patterns. The method is suitable for materials of which the adhesion to the substrate can be improved by ion bombardment. The phenomenon has been demonstrated by creating gold nano patterns of different shapes and sizes ranging from 500 nm to 5 #mu#m on SiO_2-Si substrate using 10-30 keV Ga FIB at beam currents up to 10 pA. The mechanism involved in the process has been discussed. The technique could be utilized to prepare micro and nano patterns of thin films deposited on an appropriate substrate for optical, plasmonic and ...
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO{sub 2} layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide ...
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide ...
Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear interpolation.
One of the most challenging topics in the area of organic electronic devices is the growth of transparent electrodes onto flexible polymeric substrates that will be characterized by enhanced conductivity in combination with high optical transparency. An essential aspect for these materials is their synthesis and/or microstructure which define the transparency, the stability and the interfacial chemistry which in turn determine the performance and stability of the organic electronic devices, such as organic light emitting diodes, organic photovoltaics, etc. In this work, we will discuss the latest advances in the growth of organic (e.g. PEDOT:PSS) and inorganic (e.g. zinc oxide-ZnO, indium tin oxide-ITO) conductive materials and their deposition onto flexible polymeric substrates. We will compare the optical, structural, nano-mechanical and nano-topographical properties of the inorganic and organic materials and we investigate the effect of their structure on their properties and ...
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for ...
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior ...
This work covers three distinct aspects of deformation and fracture during indentations. In particular, we develop an approach to verification of nanoindentation induced film fracture in hard film/soft substrate systems; we examine the ability to perform these experiments in harsh environments; we investigate the methods by which the resulting deformation from indentation can be quantified and correlated to computational simulations, and we examine the onset of plasticity during indentation testing. First, nanoindentation was utilized to induce fracture of brittle thin oxide films on compliant substrates. During the indentation, a load is applied and the penetration depth is continuously measured. A sudden discontinuity, indicative of film fracture, was observed upon the loading portion of the load-depth curve. The mechanical properties of thermally grown oxide ...
Epitaxial CeO_2 buffer layers were fabricated by pulsed laser deposition (PLD) on r-cut sapphire substrates. An atomically flat CeO_2 surface with a high density of nanodots was formed by a self-assembly process. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy investigation showed that the nanodots were CeO_2 other than impurities. YBa_2Cu_3O_7_-_#delta# (YBCO) thin films were then grown on the annealed and the as-grown CeO_2-buffered sapphires by PLD. The transport measurement results showed that the nanodots enhanced the effective pinning potential and significantly increased critical current density (J _c). Especially, YBCO films with an annealed CeO_2 buffer layer showed a high J _c peak when the applied field was directed along the c-axis of YBCO. Cross-section transmission electron microscopy investigation revealed that the J _c peaks in YBCO with annealed CeO_2 ...
Nanocomposites containing polyethylene (PE) and montmorillonite clay organically modified (OMMT) with quaternary ammonium salts were obtained via direct melt intercalation. A montmorillonite sample from the Brazilian state of Paraiba was treated with four different types of quaternary ammonium salts. After the treatment, the powder was characterized by X-ray diffraction and scanning electron microscopy. The dispersion and morphologies of OMMT within PE were investigated by X-ray diffraction and transmission electron microscopy. The results revealed the formation of intercalated montmorillonite layers in the PE matrix. The thermal stability and flammability of the PE/montmorillonite clay nanocomposites were measured by thermogravimetry and horizontal burning tests for HB classification, Underwrites Laboratories (UL 94), respectively. It was shown that the samples do not degrade at the processing temperature. By adding only 3 wt.% ...
Alloy 800 and Alloy 600 are well known for their resistance to corrosion in an aqueous medium at high pressure and temperature, for which they have been widely used for more than 3 decades in different structural components of water refrigerated nuclear reactors, especially as material for the steam generator tubes (SG) in these nuclear plants. The SG tubes in the Atucha I and Embalse Nuclear Plants are made with Alloy 800. The speed of corrosion of these materials in a reactor's refrigerant medium, while very small is perfectly measurable and can be described by parabolic or logarithmic type kinetics. In other words this speed is high in the first states of growth during the formation of a protective oxide film but then drops to almost stationary values. One characteristic of these films is the formation of a double layer (or duplex): i) an internal adhering layer, of approximately constant thickness, formed by small microcrystals (#<=#0.05 ...
The repulsive Casimir force is expected as a force which enables to levitate small objects such as machine parts used in Micro Electro Mechanical Systems (MEMS), and superlubricity in MEMS may be realized by this levitation. We study the Casimir force between a gold sphere and a nanocomposite sheet containing many nickel nanoparticles. In particular, we focus on the dependence of the Casimir force on the separation between the gold sphere and the surface of the nanocomposite sheet. The Casimir force changes from the attractive force to the repulsive force as the separation increases. The strength of the repulsive force is, however, too small to levitate MEMS parts.
This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.
This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.
In this paper, a Kramers-Kronig (KK) analysis of infrared (IR) reflectance spectrum of quaternary In_0_._0_1Al_0_._0_6Ga_0_._9_3N filmgrown by molecular beam epitaxy (MBE) is reported. The infrared measurement is performed in the reflection mode at an incident angle of 15 degree sign by Fourier transform infrared (FTIR) spectroscopy at T = 300 K. The Kramers-Kronig analysis of the reflectivity data has been used to obtain the real and imaginary parts of the index of refraction (n and k), and the real and imaginary parts of the dielectric response function (#epsilon#' and #epsilon#') of the materials. Finally, the transverse optical and longitudinal optical phonons for quaternary In_xAl_yGa_1_-_x_-_yN were obtained.
The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.
Abstract:- In recent years, the study of polymer/clay nanocomposites has attracted major research and commercial interests due to their superior mechanical and thermal properties to those of the neat polymers. Numerical modelling is an advantageous approach to understand the material behaviour. In this work a symmetric two dimensional finite element model is developed to simulate the fully exfoliated Polymer/Clay nanocomposite behaviour and evaluate its- before stress stress-strain curve. The Nylon 66/Clay in this study has a nonlinear elastic behaviour. The influence of volume fraction and aspect ratio of clay platelet (defined as the ratio of the particle length to the particle thickness) on the tensile behaviour of exfoliated Nylon 66/clay nanocomposite is investigated with the aid of n...
ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band ...
In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance ...
In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C3H8O), water (H2O) and zinc acetate (Zn(CH3CO2)2) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(?) and reflectance R(?) spectra. Conjoint ...
The three-dimensional magnetic structure and reversal mechanism of patterned Co/Pt multilayers, were imaged using complementary Lorentz transmission electron microscopy (LTEM) (in-plane component) and magnetic transmission x-ray microscopy (M-TXM) (perpendicular magnetization). The Co/Pt films with perpendicular anisotropy were patterned by ion irradiation through a stencil mask to produce in-plane magnetization in the irradiated regions. The boundaries of the patterns, defined by the transition from out-of-plane to in-plane magnetization, were found to be determined by the stencil mask, whilst the scale of the magnetic reversal by the physical microstructure. The nucleation fields were substantially reduced to 50 Oe for the in-plane regions and 1 kOe for the perpendicular regions, comparing to 4.5 kOe for the as-grownfilm. The perpendicular reversals were found to always originate at the pattern boundaries.
The combination of large thickness ($>3$ $\\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the first time. The nanoscale and the microscale have thus been blended together in sculptured thin films with transverse architectures. SiO$_x$ ($x\\approx 2$) nanowires were grown by electron--beam evaporation onto silicon substrates both with and without photoresist lines (1--D arrays) and checkerboard (2--D arrays) patterns. Atomic self--shadowing due to oblique--angle deposition enables the nanowires to grow continuously, to change direction abruptly, and to maintain constant cross--sectional diameter. The selective growth of nanowire assemblies on the top surfaces of both 1--D and 2--D arrays can be understood and predicted using simple geometrical shadowing equations.
Abstract A diacrylate polysulfone oligomer is synthesized and used as the acrylic oligomer for the in situ synthesis of noble metal/PSU nanocomposites through UV-induced simultaneous radical polymerization of acrylic functionalities and NP formation by reduction of their precursors. Thus, silver or gold NPs are formed in situ during polymer network formation. FESEM analysis of the morphology of the cured systems demonstrates that the nanoparticles of the noble metals are homogeneously distributed in the network without macroscopic agglomeration.
Ordered mesoporous C-TiO2 nanocomposites with crystalline framework were prepared by the evaporation-induced triconstituent co-assembly method. The products were characterized by XRD, TEM, N2 adsorption-desorption and TG. Their microwave absorption properties were investigated by mixing the product and epoxy resin. It is found that the peak with minimum reflection loss value moves to lower frequencies and the ordered mesoporous C-TiO2 nanocomposite possesses an excellent microwave absorbing property with the maximum reflection loss of -25.4 dB and the bandwidth lower than -10 dB is 6.6 GHz. The attenuation of microwave can be attributed to dielectric loss and their absorption mechanism is discussed in detail. The mesoporous C-TiO2 nanocomposites also exhibit a lower infrared emissivity in the wavelength from 8 to 14 ?m than that of TiO2-free powder. -- Graphical abstract: Ordered mesoporous C-TiO2 ...
Effect of radiation dose and carbon nanotubes (CNT) on the mechanical properties of standard Malaysian rubber (SMR) was investigated in this study. SMR nanocomposites containing 1-7 phr CNT were prepared using the solvent casting method and the nanocomposites were radiated at doses of 50-200 kGy. The change in mechanical properties, especially, tensile strength (Ts), elongation at break (Eb), hardness and tensile modulus at 100% elongation (M{sub 100}) were studied as a function of radiation dose. The structure and morphology of reinforced natural rubber was investigated by FESEM, TEM and AFM in order to gain further evidence on the radiation-induced crosslinking. It was found that the Ts, M{sub 100} and the hardness of the SMR/CNT nanocomposites significantly increased with radiation dose; the elongation at break exhibited an increase up to 100 kGy, and a downward trend thereafter. Results on gel fraction further confirmed ...
Buffer layers with 100% lattice match with YBa2Cu3O7 - ? (YBCO) were prepared from mixed rare-earth-oxides applying a simple sol-gel process and dip-coating method. Structural analysis of the sol-gel derived powder by X-ray diffraction revealed that the mixing parameter, which eliminates the lattice mismatch with YBCO, is x = 0.2382, 0.1852, 0.1252, 0.0906, 0.0793 and 0.0395 in (Eu1 - xHox)2O3, (Eu1 - xErx)2O3, (Eu1 - xYbx)2O3, (Gd1 - xHox)2O3, (Gd1 - xYx)2O3 and (Gd1 - xYbx)2O3, respectively. Microstructural investigations were carried out for Gd1.819Ho0.181O3 films epitaxially grown on cube-textured Ni (100) substrates by sol-gel dip-coating process. X-ray diffraction of the buffer showed strong out-of-plane orientation on Ni tape. The (Gd1 - xHox)2O3 (222) pole figure indicated a single cube-on-cube textured structure. The omega and phi scans revealed good out-of-plane and in-plane alne alignments. The full-width at half-maximum values of ...
In order to fabricate high temperature superconducting tapes for power applications, the authors have analyzed different buffer layer architectures grown on textured Ni substrates suitable for YBCO deposition. Due to its optimal lattice matching the studied structures present as top layer a CeO{sub 2} film. The deposition of CeO{sub 2} on Ni substrates was performed by pulsed laser ablation and by e-beam evaporation at different temperatures. The films obtained by the two deposition techniques have not optimal structural properties, having a polycrystalline component. The misorientation of CeO{sub 2} is probably due to the formation of NiO at the interface between the film and the substrate during the deposition process even if no oxygen is introduced. In order to prevent Ni oxidation an intermediate 2000 {angstrom} Pd thick film was deposited by e-beam. Furthermore, the lattice ...
YBCO films were fabricated on PLD-CeO{sub 2}/IBAD-Gd{sub 2}Zr{sub 2}O{sub 7}/Hastelloy substrates using the advanced TFA-MOD process. The effective thickness of the CeO{sub 2} buffer layer for obtaining high I{sub c} was investigated in short samples of YBCO films. The CeO{sub 2} buffer layer was epitaxially grown on an IBAD-Gd{sub 2}Zr{sub 2}O{sub 7} template tape with 18 deg. of {delta}{phi} by a reel-to-reel PLD system. The in-plane grain alignment of PLD-CeO{sub 2} buffer layers rapidly improved with the thickness and saturated at a critical thickness of 0.8 {mu}m. The size of CeO{sub 2} grains was about 1 {mu}m at the saturated thickness of {delta}{phi}. YBCO films with the thickness of 1 {mu}m were deposited by the TFA-MOD on the CeO{sub 2} buffer layer with different thickness films. Improvement of the CeO{sub 2} in-plane grain alignment resulted in increase of I{sub c}. The ...
The sol-gel-immobilized Tris(2,2'-bipyridyl)ruthenium(II) [Ru(bpy)_3 "2"+] electrogenerated chemiluminescence (ECL) sensor was applied to the reversed-phase high-performance liquid chromatography (HPLC) determination of phenothiazine derivatives (promazine, chlorpromazine, triflupromazine, thioridazine, and trifluoperazine) and erythromycin in human urine samples. In this method, Ru(bpy)_3 "2"+ was immobilized in sol-gel-derived titania (TiO_2)-Nafion nanocompositefilms coated on a dual platinum electrode. This method eliminates an extra pump needed for the delivery of Ru(bpy)_3 "2"+ reagent into a reaction/observation zone in front of photomultiplier tube because the immobilized-Ru(bpy)_3 "2"+ is recycled on the electrode surface by an applied potential at +1.3 V versus Ag/AgCl (3 M NaCl) reference electrode. The resulting analytical performances such as detection limit, working range, sensitivity, and measurement precision were slightly ...
The sol-gel-immobilized Tris(2,2'-bipyridyl)ruthenium(II) [Ru(bpy){sub 3} {sup 2+}] electrogenerated chemiluminescence (ECL) sensor was applied to the reversed-phase high-performance liquid chromatography (HPLC) determination of phenothiazine derivatives (promazine, chlorpromazine, triflupromazine, thioridazine, and trifluoperazine) and erythromycin in human urine samples. In this method, Ru(bpy){sub 3} {sup 2+} was immobilized in sol-gel-derived titania (TiO{sub 2})-Nafion nanocompositefilms coated on a dual platinum electrode. This method eliminates an extra pump needed for the delivery of Ru(bpy){sub 3} {sup 2+} reagent into a reaction/observation zone in front of photomultiplier tube because the immobilized-Ru(bpy){sub 3} {sup 2+} is recycled on the electrode surface by an applied potential at +1.3 V versus Ag/AgCl (3 M NaCl) reference electrode. The resulting analytical performances such as detection limit, working range, ...
Individual nanoscale building blocks exhibit a wide range of size-dependent properties, since their size can be tuned over known characteristic length scales of bulk materials. In the last several years, the possibility of combining different materials in the form of two and three component nanoparticles (NPs) has been extensively explored. Also multi-component materials can be obtained via self-assembly of NPs from their binary colloidal mixtures. These new nanocrystal solids may possess tunable collective properties that originate from interactions between size and composition controlled building blocks. Exchange coupling between neighboring NPs of magnetically soft and hard materials enhances the magnetic energy product of the nanocomposite material. Randomly mixed solids of small and large semiconducting CdSe NPs revealed enhancement of photoluminescence intensity of large semiconductor particles accompanied by quenching of photoluminescence of the small ...
Feasibility of depositing continuous films of nano-porous alumino-silicates, primarily zeolites and MCM-41, on metallic and non-metallic substrates was examined with an aim to develop membranes for separation of gaseous mixtures and also for application as hydrogen storage material. Mesoporous silica was deposited in-side the pores of these nano-porous disks with an aim to develop membranes for selective separations. Our study involves supported zeolite film growth on substrates using in-situ hydrothermal synthesis. Faujasite, Silicalite and Mesoporous silica have been grown on various metallic and non-metallic supports. Metallic substrates used for film growth included anodized titanium, sodium hydroxide treated Titanium, Anodized aluminum, and sintered copper. A non-metallic substrate used was nano-porous aluminum oxide. Zeolite film growth was characterized using Scanning ...
The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate temperatures between 350 ...
Fluoroalkyl end-capped vinyltrimethoxysilane oligomer suffered the sol-gel reaction under alkaline conditions in the presence of titanium oxide nanoparticles in tetrahydrofuran to afford the corresponding fluorinated oligomer/titanium oxide nanocomposites[RF-(VM-SiO2)n-RF/TiO2] in excellent to moderate isolated yields. These fluorinated composites thus obtained were nanometer size-controlled fine particles, and exhibited good dispersibility and stability in traditional organic solvents except for water. These fluorinated nanocomposites were applied to the surface modification of glass to exhibit not only a completely superhydrophobic characteristic (a water contact angle: 180degree) with a non-wetting property against water droplets but also a good oleophobicity imparted by fluoroalkyl seg...
Alumina-reinforced carbon nanofiber nanocomposites were prepared using different routes; powders mixture, colloidal route and sol?gel process followed by spark plasma sintering (SPS). CNFs/xAl2O3 (x = 10?50 vol.%) were prepared through nanopowders mixing in a high-energy attrition milling. The main limitations in the preparation of this kind of nanocomposites are related to the difficulty in obtaining materials with a homogeneous distribution of both phases and the different chemical nature of CNFs and Al2O3, which causes poor interaction between them. A surface coating of CNFs by wet chemical routes with an alumina precursor is proposed as a very effective way to improve the interaction between CNFs and Al2O3. An improvement of 50% in fracture strength was found for similar nanocomposite ...
This paper presents a detailed characterization and rheometric property study of in-situ sodium activated, organomodified bentonite clay - styrene-butadiene rubber (SBR) nanocomposite. It was found that around 10phr loading was the optimum level for maximum effect of the organo clay. The WAXD data indicated that at higher loading there was formation of agglomerations in the matrix. It was found that organo clay compound exhibited lower maximum torque in comparison to equivalent amount of carbon black loaded compound. The nanocomposites were also used for partial replacement of N330 carbon black in a highly black loaded compound. Part replacement of the carbon black with nano-clay reduced the maximum rheometric torque in comparison to the control compound. Detail study revealed that with sl...
Abstract A one step method was used to prepare stable aqueous nanocomposite dispersions based on cellulose whiskers extracted from the rachis of the date palm tree and a poly(styrene co 2 ethyl hexylacrylate) copolymer via miniemulsion polymerization. A reactive silane, i.e., methacryloxypropyl triethoxysilane was added to stabilize the dispersion and favor the anchoring of the whiskers on polymer particles. Dynamic light scattering was used to study the effect of the silane and whiskers contents on the average particle size of the polymer. Nanocomposites materials were prepared from these dispersions using a casting/evaporation method. The effect of the silane and whiskers contents on the thermal and mechanical properties were studied using differential scanning calorimetry and dynamic me...
Here, a general approach for the preparation of reduced graphite oxide (rGO)-silver nanocomposite has been investigated. Graphite oxide (GO) sheets are used as the nanoscale substrates for the formation of rGO-silver composite. GO sheets and Ag ions can be reduced at the same time, under a mild condition using l-ascorbic acid (l-AA) as reducing agent. This simple approach should find practical applications in the production of rGO-silver nanocomposite. The SEM analysis indicates that the silver particles are dispersed on graphene sheets. Raman signals of rGO in the composite are increased by the attached silver nanoparticles, displaying surface-enhanced Raman scattering activity. The degree of enhancement can be adjusted by varying the quantity of silver nanoparticles in the composite. In ...
Nanocomposites comprising nanocrystal silicon (Si), disordered carbon (DC), and multi-walled carbon nanotubes (MWCNTs) - denoted as Si/DC/MWCNTs - have been prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with Si and MWCNTs. This nanocomposite anode material showed a discharge capacity of 1216 mAh/g in the first cycle, and a charge capacity of 711 mAh/g after 20 charge-discharge, much higher than that of Si/DC composite. It can be observed that Si particles wrapped in MWCNTs were homogeneously embedded into the matrix of the DC. The improved electrochemical performance is hypothesized to be mainly attributed to the morphology stability of the composite due to the excellent resiliency and distinct electric conductivity of the MWCNTs.
Ni-Co/SiC nanocomposite coatings were electrodeposited in a modified watt type of Ni-Co bath containing 20nm SiC particles to be codeposited. Potentiodynamic polarization tests were conducted to study the effect of the SiC particulates on the electrodeposition of Ni and Co. Scanning electron microscopy was used to assess the morphology of the Ni-Co alloy and Ni-Co/SiC nanocomposite coatings. The distribution of the particulates in the matrix was considered by means of transmission electron microscopy. Applying nanomechanical testing instruments coupled to atomic force microscopy, mechanical properties of the alloy and composite coatings were studied and compared. The presence of 11vol.% SiC in the Ni-Co matrix increased hardness more than 60%. The average depth of scratch in the mentioned ...
An organically modified montmorillonite (MMT) was compounded with polybutylene terephthalate (PBT) in a twin-screw extruder. The organoclay PBT nanocomposites were then injection molded by conventional and microcellular methods. Nitrogen was used as the blowing agent. The effect of organoclay content, organoclay size (8 and 35mm), and speed of the screw (80 and 100rpm) on the mechanical and thermal properties were investigated. The results showed that when the MMT content was 1.0wt.%, the nanocomposites have maximum tensile strength, wear resistance, and cell density. Moreover, the larger the particle size, the greater the tensile strength. The screw speed during compounding also affected the mechanical strength. The higher speed of the screw increased the tensile strength of the nanocompo...
One of the NASA research activities was to identify, characterize, and simulate a series of technologies that could be used for hydrogen production at NASA Kennedy Space Center (KSC) using locally available sources. This project examined the production of hydrogen from solar energy. To produce hydrogen by water splitting, the operating voltage of conventional photovoltaic (PV) cells cannot supply the overvoltage required. Thus, the objective of this project was to research and develop photoelectrochemical (PEC) cells that can supply the required voltage for water splitting by constructing a multiple bandgap tandem PV cell and a photocatalyst that can be activated by infrared (IR) photons transmitted through the PV cell. The proposed concept is different from conventional PEC water splitting by using multiple band gap combinations. The advantages for this PEC cell concept is that the PV cells are not in contact with the electrolyte solution, thus reducing the problems of corrosion and ...
Effects of PbO on the repassivation kinetics of alloy 690TT were examined using the rapid scratching electrode technique under a potentiostatic condition to elucidate the influence of PbO on SCC resistance of the alloy. The repassivation kinetics of the alloy was analyzed in terms of the current density flowing from the scratch, i(t), as a function of the charge density that has flowed from the scratch, q(t). Repassivation on the scratched surface of the alloy occurred in two kinetically different processes; passive film initially nucleated and grew according to the place exchange model in which log i(t) is linearly proportional to q(t) with a slope of 1/K, and then grew according to the high field ion conduction model in which log i(t) is linearly proportional to 1/q(t) with a slope of cBV. 1/K and cBV are parameters representing the SCC susceptibility as well as repassivation rate of the alloy at an initial and an intermediated stages of repassivation ...
Effects of PbO on the repassivation kinetics of alloy 690TT were examined using the rapid scratching electrode technique under a potentiostatic condition to elucidate the influence of PbO on SCC resistance of the alloy. The repassivation kinetics of the alloy was analyzed in terms of the current density flowing from the scratch, i(t), as a function of the charge density that has flowed from the scratch, q(t). Repassivation on the scratched surface of the alloy occurred in two kinetically different processes; passive film initially nucleated and grew according to the place exchange model in which log i(t) is linearly proportional to q(t) with a slope of 1/K, and then grew according to the high field ion conduction model in which log i(t) is linearly proportional to 1/q(t) with a slope of cBV. 1/K and cBV are parameters representing the SCC susceptibility as well as repassivation rate of the alloy at an initial and an intermediated stages of repassivation ...
[sup 13]C epitaxial diamond films have been grown on [sup 12]C-type IIb diamond substrates doped with boron, using electron assisted chemical vapor deposition. The relation between etch pits to dislocations in [sup 13]C diamond film and the broadening of the first-order Raman peak was examined. The reactant gas was [sup 13]CH[sub 4] of > 99% purity. The substrate temperature was varied from 943 to 1300 C. The uneven surface morphology was confirmed by atomic force microscopy (AFM) and laser microscopy. From 943 to 1030 C, etch pit rows along left angle 100 right angle were observed. At 991 C, the etch pit density on a row was 3300 to 5000 pits/cm. The Ar[sup +] laser beam was focused on a transparent area near the row of etch pits, where the boron impurity of the substrate is less than several 10 ppm. The first-order Raman line of [sup 13]C epitaxial diamond film was broadened to 3.6-4.0 cm[sup -1]. ...
We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the surface. Cross-sectional TEM images revealed that the #beta#-FeSi_2 growth continued beneath the Si surface. The part of the #beta#-FeSi_2 nanodot ...
Monte-Carlo simulations of 2-MeV #alpha#-particle channeling in Si_1_-_xSn_x alloys with 0#<=#x#<=#1 have been performed. The simulations are compared with measured channeling-angular scans for strained Si_0_._9_5Sn_0_._0_5 layers grown by molecular beam epitaxy (MBE). Agreement between simulated and measured angular scans can only be achieved if we assume a deviation of the crystal structure from the ideal one. This deviation can be attributed to a mosaic structure in the films and to an atomic-scale distortion of the crystal lattice due to an expected difference in the bond lengths between the Si-Si, Si-Sn and Sn-Sn atoms (such a difference in bond lengths has been observed in the epitaxial Si_1_-_xGe_x system). The contributions from both of these imperfections are estimated and discussed.
Secondary caries and restoration fracture remain the two most common problems in restorative dentistry. Release of fluoride ions (F) could be a substantial benefit because F could enrich neighboring...Full Text Available
A type of Si3N4-based nanocomposites ceramic cutting tool material was prepared by the addition of nano-scale Si3N4W whisker and nano-scale TiN particle. Cutting performance of the Si3N4/Si3N4W/TiN nanocomposite ceramic tool in machining of cast iron was investigated in comparison with a commercial sialon ceramic tool, and the tool wear mechanism was studied. The two types of cutting tools have similar cutting performance at relatively low cutting parameters, while Si3N4/Si3N4W/TiN nanocomposite tool exhibits a better wear resistance than sialon tool at the relatively high cutting parameters. The wear of sialon ceramic cutting tool is dominated by the plastic deformation, abrasive action, microcracking, pullout of grains and chemical action at the higher cutting parameters. The higher mech...
Methods of X-ray diffraction and transmission electron microscopy were used to study the microstructure of dispersion-strengthened Cu-Al2O3 nanocomposites obtained by the method of simultaneous deposition of Cu and Al2O3 from the vapor phase. The effect of the size of particles of the oxide (Al2O3) and of their content on the electrical resistance of the composite has been considered. The results obtained make it possible to suppose that the main structural factor that determines the electrical resistance of the composite are nanodispersed particles of Al2O3 with a size of less than 20 nm.
An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd/sub 2/Si layers. Epitaxial Pd/sub 2/Si films were grown on Si(111) substrates over a temperature range of 160-222/sup 0/C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy E/sub a/ = 1.06 eV and prefactor k/sub 0/ = 7 x 10/sup -4/ cm/sup 2//s. The low value of E/sub a/ suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, ...
Many auxin responses are dependent on redistribution and/or polar transport of indoleacetic acid. Polar transport of auxin can be inhibited through the application of phytotropins such as 1-naphthylphthalamic...Full Text Available
Multi-walled carbon nanotubes (MWNTs) were modified with poly(hexamethylene adipamide) (also known as Nylon 66) via a controlled polymer solution crystallization method. A 'nanohybrid shish kebab' (NHSK) structure was found wherein the MWNT resembled the shish while Nylon 66 lamellar crystals formed the kebabs. These Nylon 66-functionalized MWNTs were used as precursors to prepare polymer/MWNT nanocomposites. Excellent dispersion was revealed by optical and electron microscopies. Nitric acid etching of the nanocomposites showed that MWNT formed a robust network in Nylon 66. Non-isothermal DSC results showed multiple melting peaks, which can be attributed to lamellar thickness changes upon heating. The crystallite sizes L{sub 100} and L{sup 010} of Nylon 66, determined by WAXD, decreased with increasing MWNT contents. Isothermal DSC results showed that crystallization kinetics increased first and then decreased with increasing ...
Composite ZnO/Ag nanoparticles have been formed via the photocatalytic reduction of silver nitrate over the ZnO nanocrystals, their optical, electrophysical and photochemical properties have been investigated. Mie theory has been applied to analyze the structure of the absorption spectra of ZnO/Ag nanocomposite. The irradiation effects upon the optical properties of ZnO/Ag nanostructure have been investigated. It has been found that the irradiation of ZnO/Ag nanoparticles results in electrons accumulation by both the semiconductor and the metallic components of the nanocomposite. It has been found that silver nitrate can be photochemically deposited onto the surface of ZnO nanoparticles under the illumination with the visible light in the presence of the sensitizer - methylene blue. Kinetics of the sensitized Ag(I) photoredution has been studied. It has been concluded that the key stage of this process is the electron injection from ...
This paper presents the first results on formation and study of structure and properties of micro- and nanocomposite combined coatings. By means of modeling the deposition processes (deposition conditions, current density-discharge, plasma composition and density, voltage) we formed the three-layer nanocomposite coatings of Ti-Al-N/Ti-N/Al_2O_3. The coating composition, structure and properties were studied using physical and nuclear-physical methods. The Rutherford proton and helium ion backscattering, scanning electron microscopy with microanalysis, grazing incidence X-ray diffraction, as well as nanohardness tests (hardness) were used. Measurements of wear resistance and corrosion resistance in NaCl, HCl and H_2SO_4 solutions were also performed. For testing mechanical properties such characteristics of layered structures as hardness H, elastic modulus E: H"3/E"2 etc. were measured. It is demonstrated that the formed three-layer ...
Novel hybrid organic/inorganic nanocomposites made of metal oxide and conjugated polymer nanocomposite and its application in bulk-heterojunction solar cells were studied. The composite was composed of different concentrations of strontium titanate (SrTiO_3) and polyaniline doped phosphoric acid. The optimum concentration of strontium titanate was found to be 0.2 v/v. An inorganic-organic photovoltaic device with a structure of Ag/Pani-H_3PO_4-SrTiO_3/Al has been fabricated. The ideality factor value of the diode was found to be 1.8. This n value of the diode implies a deviation from ideal junction behaviour. The barrier height #phi#_b value for the diode was found to be 0.56 eV. The Ag/Pani-H_3PO_4-SrTiO_3/Al diode shows a photovoltaic behaviour with a maximum open-circuit voltage V_o_c of 2.49 V, and short-circuit current I_s_c of 5.6 mA under light illumination #lambda# = 460 nm. The conversion efficiency was found to be 5.2%. It is ...
DescriptionThe objective of this project is to relate the processing quality of wheat to the composition of the developing and mature grain using material grown under a range of nutrient regimes including long term organic and fertilised systems from the Rothamsted Broadbalk experiment, variety trials and organically grown wheat. Preliminary studies have indicated substantial differences in the transcriptome profiles of wheat grown with artificial fertiliser and with organic fertiliser on Broadbalk and tru [continued...
In this article, we describe a method used to prepare an in situ sodium-activated, organomodified bentonite clay/styrene-butadiene rubber nanocomposite master batch via a latex blending technique. The clay master batch was used for compound formulation. Octadecyl amine was used as an organic intercalate. The clay was purchased from local suppliers and was very cheap. Sodium chloride was used for in situ activation of the clay. The wide-angle X-ray diffraction data indicated that the in situ sodium activation helped to increase the intergallery distance from 1.28 to 1.88 nm. A transmission electron micrograph indicated intercalation and partial exfoliation. The thermal properties were relatively better in the case of the sodium-activated, organomodified bentonite-clay-containing compound. A...
SnO2/graphene nanocomposites have been fabricated by a simple chemical method. In the fabrication process, the control of surface charge causes echinoid-like SnO2 nanoparticles to be formed and uniformly decorated on the graphene. The electrostatic attraction between a graphene nanosheet (GNS) and the echinoid-like SnO2 particles under controlled pH creates a unique nanostructure in which extremely small SnO2 particles are uniformly dispersed on the GNS. The SnO2/graphene nanocomposite has been shown to perform as a high capacity anode with good cycling behavior in lithium rechargeable batteries. The anode retained a reversible capacity of 634 mA?h?g?1 with a coulombic efficiency of 98% after 50 cycles. The high reversibility can be attributed to the mechanical buffering by the GNS against...
Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).
A sensitive hydrogen peroxide (H2O2) sensor was fabricated based on graphene-Pt (GN-Pt) nanocomposite. The GN-Pt was synthesized by photochemical reduction of K2PtCl4 on GNs, and characterized by atomic force microscope (AFM), transmission electron microscope (TEM), and energy-dispersive X-ray spectroscopy (EDS). Electrochemical investigations indicated that the GN-Pt exhibited a high peak current and low overpotential towards the reduction of H2O2. The GN-Pt modified glass carbon electrode displayed a wide linear range (2-710mM), low limit of detection (0.5mM) and good selectivity for detection of H2O2 with a much higher sensitivity than that of Pt nanoparticles or graphene modified electrode.
This study describes the effect of treatment of Bis(3-triethoxysilyl propyl)tetrasulfane (silane coupling agent, Si69, TESPT) on in situ sodium activated, organo modified bentonite clay - styrene butadiene rubber (SBR) nanocomposite. transmission electron microscopy and Wide angle X-ray diffraction indicated the intercalation as well as partial exfoliation in both the organoclay and silane treated organoclay compound. It was found that about 5% of silane with respect to clay was the optimum dose for the treatment. Around 15% improvement in tensile and tear strength was observed due to silane treatment. Silane treated organoclay exhibited substantial improvement of the fatigue life, compression set, and rebound property. A detailed study of physical property was carried out. A comparison wi...
Full text: Thermoluminescence (TL) is a phenomenon of light emission caused by heating a pre-irradiated material. When ionizing radiation hits a TL material, electrons are freed from some atoms and moved in the material, leaving behind 'holes' of positive charge. Subsequently when the TL material is heated, the electrons and the 'holes' re-combine, and release the extra energy in the form of light. The light intensity can be measured, and related to the amount of energy initially absorbed through exposure to the ionizing radiation. In nineteen sixties thermoluminescence dosimeters (TLD) became popular for dosimetric applications in view of their small size, sensitivity and accuracy. Consequently, in early seventies, several countries started adopting of TLD for personnel monitoring. The idea of introducing TLD to replace the then prevalent film dosimeter for personnel monitoring in India was mooted and successfully implemented by Dr. K G Vohra. Limitations of ...
The optically stimulated luminescence (OSL) results a highly appropriate dosimetric technique for readings of absorbed radiation 'in alive' and 'in situ', as well as in real time. The CVD diamond on the other hand presents excellent qualities like radiation reader thanks to its reproducibility, radiation resistance, biocompatibility and non toxicity. The present work studies the answer of two diamond films pure and polluted with nitrogen (750 ppm) grown by the Chemical Vapor Deposition method (CVD) on silicon substrate (001) irradiated with beta (Sr-90) in the 0.833-100 Gy interval. The optical stimulation was carried out by 40 seconds with infrared laser (830 nm, 0.36 W/cm{sup 2}) and the filter BG-39 (300-600 nm) coupled the PM. The intensity and the decay of the hyperbolic type of the LOE curves were similar in both samples, for the non doped diamond were observed trapping states in 200-380 C being ...
The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, ...
The diverse microenvironments of foods, changing with processing and preservation, might provide conditions that would enhance the growth of microorganisms which are the principal cause of spoilage, off-odor and unpleasant flavor in foods. Radiation is a potential process which may provide a product with far superior microbial quality for food preservation, by reduction of microbial population; elimination of food-borne pathogens; extension of shelf-life; and reduction of spoilage. The aim of irradiation at low dose level is to eliminate certain microorganisms, especially spoilage types and those of public health significance. But, the radurization dose allows the outgrowth of radioresistant bacteria. Certain strains of Moraxella-Acinetobacter (M-A) groups have been recognized as radioresistant bacteria (Welch and Maxcy, 1975), which may have gone unnoticed by food microbiologists, since these bacteria have not been associated with problems and are present in relatively small numbers. ...
Aluminum, due to its low density and low cost, is a key material for future lightweight applications. However, like other structural materials, aluminum is subject to various forms of corrosion damage that annually costs the United States approximately 5% of its GNP [1]. The main goal is to investigate the effects of various solution anions on aluminum surfaces, and specifically probe pit initiation and inhibition. Using surface analysis techniques including X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy, results have been correlated with those obtained from electrochemical methods and a radiolabeling technique developed in the Wieckowski laboratory. Analysis of data has indicated that important variables include type of anion, solution pH, and applied electrode potential. While aggressive anions such as chloride are usually studied to elucidate corrosion processes to work ultimately toward inhibition, its corrosive properties can be ...
The synthesis of a new kind of magnetic, fluorescent multifunctional nanoparticles (~30 nm in diameter) was demonstrated, where multiple fluorescent CdTe quantum dots (QDs) are covalently linked...Full Text Available
TEM and HRTEM have been used to characterise the microstructures of materials formed by hot-pressing silicon nitride with an Al_2O_3-SiO_2-TiO_2 densification aid system, to form #beta#'-sialon-TiN composites in which the TiN particles are of 20-100 nm dimension. (orig.).
The pitting resistance of Fe-Cr and Fe-Cr-Mo alloys has been correlated with characteristics of the passive films analyzed by Auger electron spectroscopy (AES). Increased film protectiveness as a result of increased Cr in the alloy can be directly attributed to Cr enrichment of the film and decreased film thickness. Increased Mo in the alloy or passivation at noble potentials promotes passive film resistance to breakdown, but neither does much to change the macrocharacteristics of the film. Rather, it is suggested that the roles of alloying and/or passivation conditions are related to the susceptibility and distribution of weak points of the film. In solutions in which pitting occurs, chloride is generally not incorporated into the film, suggesting that the role of halides is to interact with weak points of the ...
Polyacrylonitrile films have been spin cast and pyrolyzed to produce thin (500--1500 A) carbon films. These films have higher electrical conductivities than films produced by other methods at similar temperatures. The conductivity can be varied by at least four orders of magnitude by changing the pyrolysis temperature. Ultraviolet, infrared, and Raman spectroscopies were used to investigate the chemical structure of the films during different stages of processing.
Ethane oxidation was studied in ethane-grown resting cells (mycelia) of an Acremonium sp. and in cell-free preparations of such mycelia. From resting cell experiments evidence was found for a pathway...Full Text Available
Fungal and oomycete populations and their dynamics were investigated following the introduction of the biocontrol agent Pythium oligandrum into the rhizosphere of tomato plants grown...Full Text Available
Single crystals of ytterbium tartrate trihydrate have been grown by gel method using silica and agar-agar gels as media of growth. The medium of growth influences the morphology of grown crystals, silica gel yielding single and polycrystalline in the form of spherulites whereas agar-agar gel leading to growth of single and twinned crystals. Materials grown as single crystals have been characterized by using optical and scanning electron microscopy (SEM), EDAX, XRD, FT-IR, CHN and thermogravimetric techniques. The stoichiometry of the grown single crystals is suggested to be Yb(C4H4O6) (C4H5O6).3H2O. The FT-IR spectrum shows the presence of singly as well as doubly ionized tartrate ligands. Results of thermal analysis indicate that the material is thermally stable up to a temperature of 200...
YBa_2Cu_3O_7_-_x thick films have been deposited on silver sheets and MgO single crystals by spray pyrolysis. Film texture is related to film thickness and sintering temperature. The X-ray intensity ratio of the 005 peak to the 110 peak is higher for thin films deposited at the higher temperatures. However, elevated temperatures promote copper diffusion and second-phase formation in films deposited on silver. Films deposited on MgO can have larger grain sizes and are more oriented than those deposited on silver.
The optical pressure exerted o a thin film, which is locked in the evanescent field formed at the plane interface with a totally-reflected Gaussian beam, is investigated. Some calculations of the pressure on the film caused by the evanescent field are presented in the different conditions of film thickness, film position, incident angle and polarization of a gaussian beam. The results show that the pressure exertion on the thin film can change from pushing to pulling as the parameters are varied. In particular, we find that the direction of optical pressure can act oppositely at the different positions of the film surface in the evanescent field.
Silver silica nanocomposites were obtained by the sol-gel technique using tetraethyl orthosilicate (TEOS) and silver nitrate (AgNO{sub 3}) as precursors. The silver nitrate concentration was varied for obtaining composites with different nanoparticle sizes. The structural and microstructural properties were determined by x-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). X-ray photoelectron spectroscopic (XPS) studies were done for determining the chemical states of silver in the silica matrix. For the lowest AgNO{sub 3} concentration, monodispersed and spherical Ag crystallites, with an average diameter of 5 nm, were obtained. Grain growth and an increase in size distribution was observed for higher concentrations. The occurrence of surface plasmon resonance (SPR) bands and their evolution in the size range 5-10 nm is studied. For decreasing nanoparticle size, a redshift and broadening of the ...
Simple and low cost biosensor based on screen-printed electrode for sensitive detection of some alkylphenols was developed, by entrapment of HRP in a nanocomposite gel based on single-walled carbon nanotubes (SWCNTs) and 1-butyl-3-methylimidazolium hexafluorophosphate ([BMIM][PF(6)]) ionic liquid. Raman and FTIR spectroscopy, CV and EIS studies demonstrate the interaction between SWCNTs and ionic liquid. The nanocomposite gel, SWCNT-[BMIM][PF(6)] provides to the modified sensor a considerable enhanced electrocatalytic activity toward hydrogen peroxide reduction. The HRP based biosensor exhibits high sensitivity and good stability, allowing a detection of the alkylphenols at an applied potential of -0.2V vs. Ag/AgCl, in linear range from 5.5 to 97.7?M for 4-t-octylphenol and respectively, between 5.5 and 140?M for 4-n-nonylphenol, with a response time of about 5s. The detection limit was 1.1?M for 4-t-octylphenol, and respectively 0.4?M for ...
Electrodeposition of tertiary alumina/yttria/carbon nanotube (Al2O3/Y2O3/CNT) nanocomposite by using pulsed current has been studied in this investigation. Coating process has been performed on nickel sulphate bath and nanostructure of obtained compound layer is examined with high precision figure analysis of SEM nanographs. The effects of process variables, i.e., Y2O3 concentration, treatment time, frequency and duty cycle, have been experimentally studied. Statistical methods are used to achieve the minimum of corrosion rate and average size of nanoparticles. Finally the contribution percentage of different effective factors is revealed and confirmation run shows the validity of obtained results. Also it has been revealed that by changing the size of nanoparticles, corrosion properties o...
Homogeneous mixtures of Ce0.8Gd0.2O1.9 (GDC) and La0.6Sr0.4Co0.2Fe0.8O3 (LSCF) nanopowders were successfully synthesized using induction plasma by axial injection of a solution. The resulting nanocomposite powders consisted of two kinds of nanopowders with different mass ratio of GDC/LSCF, such as 3/7 and 6/4. The morphological features, crystallinity, and the phases of the synthesized powders were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), local energy-dispersive x-ray spectroscopy (EDS) analysis, and x-ray diffraction (XRD). The nanopowders are almost globular in shape with a diameter smaller than 100?nm and their BET specific areas are around 20?m2?g?1. The GDC and LSCF phases are well distributed in the nanopowders. In addition, suspens...
A method of kinetic analysis applicable to non-isothermal oxidation processes of ceramic nanocomposites is presented using Ti-Si-C-N powder as the substrate. The nanoparticle size and phase composition were determined using high-resolution transmission electron microscopy and X-ray diffraction (XRD). Thermogravimetric measurements were carried out for powder samples in dry air in the temperature range 298-1770 K. The following heating rates were applied: 3, 5, 10, 20 K min{sup -1}. Mass spectrometry was used to analyze gaseous oxidation products and solid products were identified by the XRD technique. The Coats-Redfern equation was applied for the kinetic analysis. For each stage of the oxidation kinetic models, the best accuracy was achieved using a series of criteria, and then the A and E parameters of the Arrhenius equations were estimated. Both linear regression and artificial neural networks were applied in testing kinetic models.
Reactive milling of NiO + Al powder mixture resulted in the formation of NiAl-Al_2O_3 nanocomposite powders, with a crystallite size of about 20 nm. The Hall-Williamson analysis revealed that NiAl showed an orientation dependent crystallite size after short processing time and orientation dependent internal strain after long milling time. Both anisotropies were removed by heating the powders in the differential scanning calorimetry. Calorimetric studies showed one exothermic effect attributed to the reduction reaction of NiO and endothermic one associated with melting of Al. Two methods were applied for powders compaction: resistance sintering and pulse electric discharge. In both cases the densities of abut 90% of the theoretical value were achieved. A significant increase in average NiAl crystallites size in compacted samples was observed, up to several hundreds of nanometers.(author)
Four species of nanocomposites organized by hydroxyapatite (HAp), hyaluronic acid (HyA), chondroitin sulfate (ChS) and type II collagen (Col), i.e. HAp/HyA, HAp/ChS, HAp/HyA/Col and HAp/ChS/Col composites, were synthesized by coprecipitation methods. The composites could retain lots of water: 40%, 32%, 42% and 58% for the HAp/HyA, HAp/ChS, HAp/HyA/Col and HAp/ChS/Col composites, respectively. Transmission electron microscopy observations revealed that the HAp/HyA and HAp/ChS composites consisted of island-like aggregations whose sizes were 300 nm in length and 30 nm in width, and 150 nm in length and 30 nm in width, respectively. In the aggregations, there were many HAp nanocrystals of 20 nm in length, and their c-axes were aligned along the respective polymer molecules through a self-organization process. Animal tests showed that chondrocyte-like cells penetrated into the HAp/ChS/Col composites 4 weeks after implantation. It was shown that the HAp/ChS/Col ...
To improve adherent properties of electrogalvanized steel (EGS) to polymeric topcoats, the surfaces of EGS were modified by polyelectrolyte-modified zinc phosphating solution. The electrochemical reaction between phosphating solution and EGS led to the complete coverage with fully grown hopeite crystals after only 5 sec treatment, thereby improving adhesion to topcoating and providing protection of EGS against corrosion. To evaluate the ability of polyphenylene sulfide (PPS) polyaryl thermoplastic coatings to protect zinc phosphate (Zn{center_dot}Ph)treated steels from corrosion in a wet, harsh environment ( 1.0 wt % H{sub 2}SO{sub 4}, 3.0 wt % NaCl and 96.0 wt % water at temperatures from 25{degrees} to 200{degree}C), we exposed them in an autoclave to attempt heating-cooling cyclic fatigue tests (1 cycle = 12 hr at 200{degrees}C + 12 hr at 25{degrees}C) up to 90 times. The major chemical reaction at the interface between the PPS and Zn in the Zn-Ph layer during ...
Six genotypes of winter wheat (Triticum aestivum L.) differing in grain protein concentration were grown on a nutrient solution containing low concentrations of NO3−...Full Text Available
In-situ sodium activated organo modified bentonite clay was also used for partial replacement of the carbon black (N330). Detailed study with the black filled compound revealed that, with slight modification of the curing package, up to 10 phr of the carbon black replacement is possible. At equivalent loading of 5 and 10 phr of in-situ sodium activated organo modified bentonite clay exhibited better properties in comparison to carbon black filled compound.
This paper reports the presence of face centered cubic cobalt precipitates inside tungsten carbide in nanocomposite of WC-Co synthesized by spray conversion processing. EDS was used to identify the presence and micro-diffraction was employed to determine the nature of the precipitates. There is entrapment of cobalt in tungsten carbide during the spray conversion process used to form WC/Co powder. During consolidation, at high temperatures, the cobalt attains enough mobility to precipitate inside WC. A vanadium containing compound was seen at the interfaces in samples which incorporated VC as a grain growth inhibitor. (orig.)
In this article, several applications of nanomaterials in food packaging and food safety are reviewed, including: polymer/clay nanocomposites as high barrier packaging materials, silver nanoparticles as potent antimicrobial agents, and nanosensors and nanomaterial-based assays for the detection of food-relevant analytes (gasses, small organic molecules and food-borne pathogens). In addition to covering the technical aspects of these topics, the current commercial status and understanding of health implications of these technologies are also discussed. These applications were chosen because they do not involve direct addition of nanoparticles to consumed foods, and thus are more likely to be marketed to the public in the short term.
CuPt-type ordering in In{sub 0.49}Al{sub 0.51}P is studied by TEM. The lattice-matched film was grown by MOCVD on a GaAs substrate oriented 10{sup o} off (001) towards [110], at 650 C and 25 nm/min. TEM [110] and [1{bar 1}0] cross-sections (XS) were made by wedge polishing and 2 kV Ar ion milling. In CuPt-type ordering of In{sub 0.52}Ga{sub 0.48}P, alternating In-Ga-In-Ga {l_brace}111{r_brace} planes of group III atoms produce 1/2 {bar 1}11 and 1/2 1{bar 1}1 order spots in the 110 SADP, while the [1{bar 1}0] SADP shows no order spots [1-3]. A few studies have reported this type of order in In{sub 0.49}Al{sub 0.51}P [4]. The 004 BF image of the [1{bar 1}0] XS in Fig. 1 shows uneven light/dark contrast modulation due to phase separation often observed in In{sub 0.52}Ga{sub 0.48}P. There are also light/dark layers marked ML parallel to the film growth plane; such unintentional multilayers have also been observed [5] but their ...
1. In order to carry out isothermic crystal growth experiments of YBCO the 123 primary crystallization field was determined by means of phase diagram investigations and crystal growth experiments at different oxygen partial pressure. 2. YBCO single crystals of high crystallographic perfection were grown and conclusions on the flux pinning mechanism were drawn. 3. By means of Liquid Phase Epitaxy (LPE) single crystalline (Tc{approx}90 K; {Delta}T{<=}0.5 K) c- and a,b- YBCO fils have been prepared on NdGaO{sub 3} and LaGaO{sub 3} substrates. The films were characterized structurally and magnetically. 4. Our fist melt textured YBCO ``single crystals`` possess intracrystalline critical current densities >10{sup 4} A/cm{sup 2} at B{<=}2T. The irreversibility inductions are {<=}6 T at 77 K. A simple demonstrator was constructed together with the IFW Dresden and a growth model was developed. 5. Using above all torque magnetometer ...
Single crystals of semi-organic L-histidine hydrobromide have been grown by slow evaporation technique from a mixture of L-histidine and hydrobromic acid in aqueous solution at ambient temperature. From high-resolution X-ray diffraction analysis, the crystalline perfection of the grown crystal has been studied. Single crystal X-ray diffraction analyses, Nuclear Magnetic Resonance spectral analysis, Thermo-Gravimetry (TG), Differential Thermal Analysis (DTA) and hardness test have been employed to characterize the as-grown crystals. The UV cutoff wavelength of the grown crystal is below 300 nm and has a wide transparency window, which is suitable for second harmonic generation of laser in the blue region. Nonlinear optical characteristics have been studied using Q switched Nd:YAG laser (#lambda#=1064 nm). The second harmonic generation conversion efficiency of the grown crystals ...
Chemical looping combustion (CLC) is an emerging technology for clean combustion. We have previously demonstrated that the embedding of metal nanoparticles into a nanostructured ceramic matrix can result in unusually active and sinter-resistant nanocomposite oxygen carrier materials for CLC which maintain high reactivity and high-temperature stability even when sulfur contaminated fuels are used in CLC. Here, we propose a novel process scheme for in situ desulfurization of syngas with simultaneous CO{sub 2}-capture in chemical looping combustion by using these robust nanocomposite oxygen carriers simultaneously as sulfur-capture materials. We found that a nanocomposite Cu-BHA carrier can indeed strongly reduce the H{sub 2}S concentration in the fuel reactor effluent. However, during the process the support matrix is also sulfidized and takes part in the redox process of CLC. This results in SO{sub 2} production during the ...
The kinetics of passive film formation on iron in borate buffer solution has been studied at different anodic potentials. The process of film growth has been found to occur in four distinct stages. About 80-90% of the total film thickness formed in 1h grows during the initial two stages which last for only 1-3s (depending upon potential). The electric field strength across the film is not constant but decreases with progressing film growth. The thickness of the film determined ellipsometrically is less than that calculated from the electric charge consumed. The process of anodic film formation is accompanied by the dissolution of iron which occurs over the whole range of potentials.
A super-hydrophobic coating was prepared by combining a rigid base film with crater-like hemispherical holes and acicular nanoparticles. The acicular boehmite powder provides a high contact angle on the film surface. The rigid base film with crater-like hemispherical holes inhibits the rapid decrease of contact angle by surface rubbing. The combination of different roughness is an effective method for improving the abrasion resistance of super-hydrophobic films.
The K 2010 exhibition saw the introduction of PolyOne Corps OnCap Antifog Additive for polypropylene (PP) films, the first such additive for PP films that does not require corona treatment. According to the company, this new additive simplifies production of antifog films for the flexible food packaging industry, improving production efficiencies for both cast and blown film producers.
By means of ESCA the composition and the thickness of passive films formed on austenitic stainless steels were investigated after the attack of nitric acid at various temperatures and acid concentrations. The outermost layers of the oxide film consist of SiO_2, then a layer rich of Cr-oxid follows, containing also some Mo in the four- and sixvalent state. Ni does not contribute to the oxide film. Cr is also enriched in the metal just below the oxide film. (orig.).
Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 ?C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.
As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of ...
Metastable yttrium-oxide films are synthesized using reactive sputter deposition. The yttrium concentration of the as-deposited film is found to vary as a function of the sputter deposition rate. In addition to the synthesis of the cubic equilibrium phase...
Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.
To eliminate their classical brittleness and flexibility problems zein films were plasticized by incorporation of different phenolic acids (gallic acid (GA), p-hydroxy benzoic acid (HBA) or ferulic acids (FA)) or flavonoids (catechin (CAT), flavone (FLA) or quercetin (QU)). The use of GA, CAT, FA and HBA at 3 mg/cm2 eliminated the brittleness of films and gave highly flexible films showing elongations between 135% and 189%, while FLA and QU caused no considerable effect on film elongation. The films containing FA and HBA showed extreme swelling and lost their structural integrity when hydrated in distilled water. In contrast, CAT and GA containing films maintained their integrity following hydration. Most of the GA (up to 93%) and a considerable portion of CAT (up to 60%) in the films exis...
The combined process of low temperature plasma nitriding and TiN film deposition was realized on the plasma-assisted vacuum arc plating set. The process of plasma nitriding can be done below 200 degree C. The low temperature plasma nitriding and TiN film deposition was realized on the same device. By the SEM analysis of the plating structure, low hardness grads from the substrate to the film was obtained, and it was found that the mixed nitride plating formed at the interface between the substrate and the film. The quantitative measurement of substrate-film adherence showed that the adherence was improved notably by using the process. The adherence between film and substrate can reach to 59.6 MPa without the bias voltage supplying
Palladium chloride films have been found to be useful as ... when suitably prepared palladium chlo- ride films are exposed ... Like the palladium chloride ( PdCl2) ...
We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.
This paper reports that the point defect model for steady-state passive films formed anodically on metal s in aqueous environments has been extended to include irreversible dissolution of the film and the irreversible generation and annihilation of cation and oxygen vacancies at the metal/film and film/solution interfaces. THe model yields a number of diagnostic criteria that can be used to identify the majority (vacancy) charge carrier and to characterize the kinetic nature of the interfacial vacancy generation and annihilation processes. We use these criteria to show that the steady-state passive film that forms on nickel in acidic phosphate buffer solutions is a cation conductor and that cation transport from the metal to the solution involves irreversible ejection of cations from the film. On the other hand, the passive film that forms ...
Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical absorbance of the film was of the order of ...
The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N {sub D}) for the passive film is of the order of 10{sup 21} cm{sup -3} and decreases with increasing formation time and potential, ...
The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N _D) for the passive film is of the order of 10"2"1 cm"-"3 and decreases with increasing formation time and potential, indicating ...
...qualified and who were under consideration at the time, USDA Secretary Tom Vilsack chose an animal husbandry specialist employed by one of the largest organic livestock product marketers in the country. While this appointee had grown up on a conventional farm, her immediate occupation is not that of ...
Vascular permeability factor (VPF) is an Mr 40-kD protein that has been purified from the conditioned medium of guinea pig line 10 tumor cells grown in vitro, and increases fluid permeability from blood...Full Text Available
We have investigated the transport of tritiated indole-3-acetic acid (IAA) in intact, red light-grown maize (Zea mays) coleoptiles during gravitropic induction and the subsequent development...Full Text Available
The transport of serine into tobacco (Nicotiana tabacum L. var. Xanthi) cells grown in liquid medium was studied. Serine transport was maximal below pH 4.0. A time-dependent stimulation...Full Text Available
An enzyme active against carboxymethyl cellulose (CMC) was purified from the stationary-phase-culture supernatant of Clostridium josui grown in a medium containing ball-milled cellulose. The purification...Full Text Available
We have examined the expression and structure of several genes belonging to two classes of vegetative specific genes of the simple eukaryote, Dictyostelium discoideum. In amebae grown on bacteria, deactivation...Full Text Available
Moderate doses of red (660 nanometer) irradiation cause a rapid increase in the translocation of fluorescein in dark-grown mung bean hypocotyl (Vigna radiata L.) segments. The increase...Full Text Available
IntroductionWhile epidemiological methods have grown in sophistication during the 20th century, their application in historical occupational (and environmental) health...Full Text Available
There has been great interest in understanding the methods by which collagen-based load-bearing tissue is constructed, grown and maintained in vertebrate animals. To date, the responsibility for this...Full Text Available
Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.
Sibling Paenibacillus dendritiformis bacterial colonies grown on low-nutrient agar medium mutually inhibit growth through secretion of a lethal factor. Analysis of secretions reveals...Full Text Available
Dramatic differences in the height of lima beans (Phaseolus lunatus L.) treated with two different Rhizobium strains were studied. Lima beans were grown in Perlite...Full Text Available
Lactobacillus buchneri ST2A vigorously decarboxylates histidine to the biogenic amine histamine, which is excreted into the medium. Cells grown in the presence of histidine generate both a transmembrane...Full Text Available
Over the last several years, as cesarean deliveries have grown increasingly common, there has been a great deal of public and professional interest in the phenomenon of women ‘choosing’...Full Text Available
Using pharmacological and chromatographic techniques, it was shown that acetylcholine was present in all organs of both light- and dark-grown mung bean seedings (Phaseolus aureus)....Full Text Available
Growth of the malolactic bacterium Leuconostoc oenos was improved with respect to both the specific growth rate and the biomass yield during the fermentation of glucose-malate mixtures as compared with...Full Text Available
The sale of consumer products over the Internet has grown rapidly, including the sale of drugs. While the growth in online drug sales by reputable pharmacies is a trend that may provide benefits to...Full Text Available
This investigation clearly demonstrates that through partial impregnation techniques wood-polymer composites can be formed from the Pinus species grown in South Africa with a considerable saving in monomer costs without sacrificing the important physical properties of these materials.
The biological and radiobiological peculiarities of seeds and seedlings of the Rumex confertus and Lupinus polycolor plants, which grown during several generations in plots with different level of radionuclide pollution of the Chernobyl exclusive zone have been investigated.
Sep 28, 2011 ... Description: Four Populus clones were grown in central Missouri for 2 years at 1 x 1 m spacing to study total biomass production on floodplain ...
Aerobacter cloacae UW-C83 and Escherichia coli K-12 were grown under various anaerobic environments. Yatp values were calculated by determination...Full Text Available
Confluent monolayers of microvascular endothelial cells, derived from the rat epididymal fat pad and grown in culture, were radioiodinated by using the lactoper-oxidase method. Their radioiodinated...Full Text Available
Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.
Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.
By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.
White beam Laue micro-diffraction was performed on directionally solidified, single-crystal Mo pillars in the as-grown state, after focused ion beam (FIB) milling and after pre-straining. The Laue diffraction peaks from the as-grown pillars are very sharp and show no broadening, similar to those from single-crystal Si wafers. Significant broadening and streaking of the peaks occurred after FIB milling and pre-straining, indicative of the damage these treatments induce in the nearly perfect crystal structure of the directionally solidified Mo pillars.
Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).
This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.
The structure and composition of the passive films formed on 304 stainless steel in deaerated IN H{sub 2}SO{sub 4} were studied by RHEED, XPS and AES. The stability of the passive films as a function of passivation potential and passivation time were investigated. The role of bound water in affecting the stability of the passive films is discussed. 7 refs., 3 figs.
Only two years ago, plastic film recycling was considered an onerous task. Different resins had to be identified, colors had to be separated, and minute contaminants had to be weeded out almost by hand to produce a quality material. But the tide of plastic film recycling is changing now that new technologies have emerged and more organized collection infrastructure have been developed. Today, plastic film recycling maintains a lucrative market for those with the right combination of equipment and know-how.
Both the sign and magnitude of residual stress can vary with the thickness of sputter deposited films. The origins of this behavior are not well understood. In this work, the authors consider the correlation between the residual stress behavior and the depth dependence of impurities in thin (2.5 nm--150 nm) sputtered Mo and Ta films. They also consider the effects of phase transformations and microstructural changes on the stress behavior. Films were deposited onto Si substrates with native oxide. The residual stress observed in the Mo films varied from highly compressive at 2.5 nm film thickness to {approximately}0 at 10 nm thickness. Ta films also exhibited a high compressive stress, which relaxed from highly compressive to tensile between 10 nm and 50 nm film thickness. Impurities in the films may originate from the ...
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
Callus cultures derived from pith tissue of Nicotiana tobacum were grown on two media either under continuous illumination or in complete darkness. The first medium limited greening ability of callus grown in the light (3 milligrams per liter naphthalene acetic acid, 0.3 milligram per liter 2-isopentenylaminopurine, Murashige and Skoog salts, and 2% sucrose). The second medium encouraged chlorophyll synthesis (greening) though not shoot formation (0.3 milligram per liter naphthalene acetic acid; 0.3 milligrams per liter 2-isopentylaminopurine). To measure intracellular concentrations, calli were grown for 15 days on these standard media containing (U-/sup 14/C)sucrose. The dry weight proportions of the calli (as a fraction of fresh weight) and many metabolite concentrations nearly doubled in light-grown cells compared to dark-grown cells and increase 30 to 40% on low-auxin media ...
Size-controllable Ag nanoparticle ultrathin films, which were fabricated by vacuum deposition method from high purity Ag wire onto cleaned indium tin oxide conducting glass, have different color fabricated by variation of preparation conditions. The UV/Vis spectra showed that optical absorption peak of these Ag nanoparticle films can be tuned in a range from 457nm to >650nm. Scanning electron microscopy images showed that with increasing film thickness Ag particle size was larger. Ag/WO3 composite films were prepared by cathodic electrodeposition of WO3 onto the surface of Ag nanoparticle films. Spectroelectrochemistry and electrochromic properties of the resulting composite films were characterized. It was found that the electrochemical and electrochromatic properties of the composite fil...
Passive films formed on stainless steels in a borate buffer solution (pH 9.2) have been investigated by capacitance measurements and photoelectrochemistry. The study was carried out on films formed on AISI type 304 and 316 stainless steels and high purity alloys with differing chromium, nickel, and molybdenum contents. Complementary research by Auger analysis shows that the passive films are composed essentially of an inner chromium region in contact with the metallic substrate and an outer iron oxide region developed at the film/electrolyte interface. The semiconducting properties of the passive films are determined by those of the constituent chromium and iron oxides which are of p-type and n-type, respectively. Thus the influence of the alloying elements on the semiconducting properties of the passive films is explained by changes in the electronic structure ...
The conductive ultra thin films were fabricated from mixed monolayers containing stearic acid and Head-to-Tail poly(3-alkylthiophene). These films exhibited well-defined layered structures as determined by optical absorption and X-ray diffraction measurements. The UV-Vis absorption spectra of these films showed lower energy absorption shifts of 48 nm from that of the random poly(3-alkylthiophene)/stearic acid LB films. The blue shift of absorption maximum of the LB film is attributed to the increase of {pi}-conjugation length caused by no steric hindrance of alkyl side chains. The conductivity of the Head-to-Tail poly(3-hexylthiophene)/stearic acid LB films was greatly improved in the range of 67-100 S/cm. (orig.)
X-Ray reflectivity has been used to investigate the microstructural changes of solution-cast stearic acid films before and after immersion in CoCl{sub 2} solutions. Before immersion, the films possess a well-defined layered structure with an interlayer spacing of 4.01{+-}0.05 nm. After the films were immersed in the CoCl{sub 2} solutions, a new set of equidistant diffraction peaks emerge, the corresponding interlayer spacing of which is 5.13{+-}0.05 nm. The X-ray photoelectron spectra of the films indicate the existence of cobalt ions inside the films after immersion. It is concluded that the permeation of the cobalt ions into the hydrophilic interlayer causes the stearic acid molecules to reorient perpendicular to the films, resulting in the increase of interlayer spacing and the roughening of the interfaces.
Cold spray was employed as a novel low temperature approach to deposit titanium dioxide (TiO{sub 2}) photocatalytic film. The film microstructure was characterized using X-ray diffraction and scanning electron microscopy. The photocatalytic performance was examined through acetaldehyde degradation under ultraviolet illumination. Results showed that TiO{sub 2} film was successfully deposited on substrate surface through cold spray. The film thickness reached up to 15 {mu}m. The film presented a rough surface and porous structure. Owing to the low temperature of spray powder, no phase and particle size changes occurred to TiO{sub 2} during deposition. It was found that the cold-sprayed TiO{sub 2} film was active for photodegradation of acetaldehyde.
Passive films were formed on a high purity Fe-23 Cr alloy in acid sulfate solutions in the presence and absence of chloride ion. The resulting film composition was investigated by Auger depth profiling. The passivated samples were exposed to a 1M NaCl solution at a constant potential slightly above the critical pitting potential, and the current-time transient was measured in order to compare the relative stability of the different films. The results obtained suggest that the formation conditions influence the chloride content of the passive film and the breakdown behavior. Passive films formed in the presence of chloride contain and are slightly less stable towards breakdown. No chloride was found in films formed in sulfate and subsequently exposed to chloride well below the pitting potential.
The total hemispherical emittance of an oxide film that formed on 6061-T6 aluminium alloy parts in the Tower Shielding Reactor-II at Oak Ridge National Laboratory was measured from 295 to 773 K using an emissometer and/or a calorimeter. The emittance of this film was critically needed for heat transfer calculations in a simulated loss-of-coolant accident of the reactor. X-ray diffraction analysis identified the film as boehmite (Al_2O_3 x H_2O), which dehydrated to alumina (Al_2O_3) upon heating above 473 K. The measured emittances for the alumina film are in excellent agreement with published values for anodized aluminum films and for bulk alumina. Published values of the emittance of boehmite could not be found for comparison, but evidence is presented that some anodization processes for aluminum yield boehmite and not alumina films.
The physical and antioxidant properties of alginate biodegradable film incorporating white, red and extruded white ginseng extracts were investigated. No differences in moisture contents of all alginate film samples were noticeable (p>0.05) except those film samples incorporated without ginseng extract, which had the highest moisture content. The addition of ginseng extract to alginate film decreased tensile strength and elastic modulus (p<0.05) but increased the percent elongation at break. The presence of extracts did not significantly affect the water vapor permeability of the film samples. Alginate film containing extruded white ginseng extract at a barrel temperature of 130degreeC presented the highest (61.12%) free-radical scavenging activity against the 2,2-diphenyl-1-picryhydrazyl ...
Critical power at boiling transition is an important factor in a boiling water reactor (BWR) fuel bundle design. Boiling transition under high quality accounts for dryout as the result of the complete disappearance of film flow on a fuel rod. This liquid film vanishing process can be calculated by the liquid film model, which takes into account the evaporation due to heat from the rod surface, liquid film entrainment by steam flow, and liquid droplet deposition. It is known that spacers affect liquid film entrainment and liquid droplet deposition, so the detailed study of spacer effects on hydrodynamic characteristics is necessary for critical power prediction based on the film flow model. Many studies have been conducted to examine spacer effects on liquid film flow. However, most of them are restricted to simple test sections such as a ...
New physical objects, ispalators based on free soap films, exhibit persistent flows of the soap solution in open and closed volumes in air with additions of gases of the C_8F_1_8 type (p = 20 Torr) at temperature drops on the films of the order of tenths and hundredths of kelvin. The flows move continuously at a velocity of 5 - 20 cm s"-"1. It is found that the parts of an inclined ispalator film show anomalous behaviour upon heating: their weight increases and they move downward over the film, whereas the unheated parts of the film move upward. Continuous radial vortex flows accompanied by the formation and washing of the regions of a thin black film are observed on circular films in closed volumes upon their uniform external cooling by evaporating water for 5 - 10 hours. The rapid flows make film ispalators the ...
In this paper, multilayer oxide nanorods were deposited in the nanopores of anodic aluminum oxide (AAO) via solution infiltration followed by heat treatment. The nanorods have a core-shell structure. First, the shell (nanotube) with the thickness of about 40nm was made of TiO"2 through the hydrolysis of (NH"4)"2TiF"6. Second, silver nanoparticles with the diameter of about 3nm were added into the TiO"2 layer through thermal decomposition of AgNO"3 at elevated temperatures. Then, cylindrical cores (nanorods) of CoO and ZnO with 200nm diameter were prepared, respectively. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the structure and composition of the nanorods. UV-vis light absorption measurements in the wavelength range from 350 to...
Abstract in english Structural characterisations using the SAXS technique in a number of nanoheterogeneous materials and liquid solutions are reviewed. The studied systems are protein (lysozyme)/water solutions, colloidal ZnO particles/water sols, nanoporous NiO-based xerogels, hybrid organic-inorganic siloxane-PEG and PPG nanocomposites and PbTe semiconductor nanocrystals embedded in a glass matrix. These investigations also focus on the transformations of time-varying structures and on str (more) uctural changes related to variations in temperature and composition. The reviewed investigations aim at explaining the unusual and often interesting properties of nanostructured materials and solutions. Most of the reported studies were carried out using the SAXS beamline at the National Synchrotron Light Laboratory (LNLS), Campinas, Brazil.
Several compatibilising systems were added to high-density polyethylene (HDPE) and polyamide 6 (PA6) blends in the presence of an organically modified montmorillonite (OMM). All the blends were prepared by using a co-rotating twin-screw extruder and characterized by SEM, TEM and XRD analyses. In addition, the rheological behaviour and the mechanical properties - tensile and impact - were evaluated. The presence of OMM affects the dimensions of the polymeric phases in the blend but not their mutual adhesion, granted only by the compatibilisers. TEM, SEM and XRD analyses indicated that there is a strict correlation between the compatibilisation level and the final interlayer distance achieved by OMM. Even if some filled compatibilised blends showed a fairly good morphology - in terms of phas...
A poly(ether urethane) (PEUR)/poly(ethylene oxide) (PEO)/SiO2 based nanocomposite polymer is prepared and employed in the construction of high efficiency all-solid-state dye-sensitized nanocrystalline solar cells. The introduction of low-molecular weight PEUR prepolymer into PEO electrolyte has greatly enhance the electrolyte performance by both improving the interfacial contact properties of electrode/electrolyte and decreasing the PEO crystallization, which were confirmed by XRD and SEM characteristics. The effects of polymer composition, nano SiO2 content on the ionic conductivity and I3- ions diffusion of polymer-blend electrolyte are investigated. The optimized composition yields an energy conversion efficiency of 3.71% under irradiation by white light (100 mW cm-2).
Yb3+?Tm3+ codoped tellurite glasses containing silver nanoparticles (NPs) were synthesized and characterized using transmission electron microscopy and optical techniques. The samples? composition and the nucleation of NPs were investigated using electron diffraction and energy dispersive spectroscopy. For the optical experiments, the samples were excited using a diode laser operating at 980?nm, in resonance with the Yb3+ transition 2F7/2?2F5/2. Photoluminescence (PL) bands corresponding to Tm3+ transitions were observed at 480, 650, and 800?nm due to the Yb3+? Tm3+ energy transfer. PL enhancement was achieved by heat-treatment of the samples at 325?C during different time intervals. The growth of the PL bands correlates with the increase of the silver NPs concentration. The relevant mecha...
The properties of a helium film on the surface of solid parahydrogen are investigated. It is shown that wetting of the solid hydrogen by the liquid helium occurs. The transport velocities along the He II film on the solid parahydrogen surface are measured in broad temperature, film height, and level difference ranges. It is shown that the transport velocity in this case has the least value as compared with its value on other substrates. The thickness of the helium-saturated film is determined on the solid hydrogen surface on the basis of the data obtained, and the value is in good agreement with the results of a computation performed within the framework of the Frenkel' theory.
A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence x-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films. (author)
By the methods of small-angle X-ray scattering and translucent electron microscopy the existence of inhomogeneity of electron density in hydrogenated films of amorphous silicon is confirmed. The decreased density regions are extended and form a branched network of channels oriented mostly by the normal direction to the films surface. The typical size of the decreased density regions network constitutes 10 nm in the 100-800 nm films thickness range. The increase of hydrogen total partial pressure in gas mixture in case of films growth results at first in the decrease of extension of these regions and than to micropores generation in the network nodal points of the decreased electron density regions.
A simple experiment to observe weak localization in thin Ag films is presented. A clear theoretical signature of weak localization is predicted in mangetoresistive measurements of thin films samples. We present a simple method for making thin Ag film samples, using evaporative deposition, and observing the small magnetoresistive signal, using a resistance bridge technique. Typical results from our students show that Ag films show the predicted behavior for weak localization with spin effects. These effects can be easily observed in a liquid helium dewar.
Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of ...
For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are ...
Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the C{sub sc}{sup -2} vs. V{sub m} plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the C{sub sc}{sup -2} vs. V{sub m} plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of ...
Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the Csc-2 vs. Vm plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the Csc-2 vs. Vm plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of Nickel base alloy after being ...
A theoretical model, which describes subband gap photoexcitation involving localized electronic states, was developed. The escape probability of a charge carrier trapped in a localized state is considered via Poole-Frenkel, direct tunneling, or phonon-assisted tunneling processes, as competing escape mechanisms. Photoelectrochemical experiments were performed on the passive films formed on zirconium and amorphous iron-zirconium alloys and on pure HfO/sub 2/ films and HfO/sub 2/ films implanted with varying concentrations of xenon. These films were found to possess some degree of disorder depending on the substrate, the thickness of the film, and the extent of implantation. The spectral dependence of the photocurrent in all of the films studied is considerably different from what was found for crystalline passive films. The potential ...
The optical properties and microstructure of germanium (Ge) films, prepared by ion-assisted deposition (IAD) process, were investigated. The Ge films were deposited on sapphire and silicon substrates, with and without simultaneous Ar+ bombardment. Higher index films, with a refractive index 7.7% larger than that of the single crystalline Ge wafer, were obtained with the IAD process. The density of the IAD film could be 1.5% greater than that of the e-beam film. The results of the heat treatment indicated that the optical and structural properties of the IAD films were more stable. Ge nano-crystallites could be observed under high ion power density, which induced a crystalline structure in the Ge thin films. The average size of the nano-crystallites, as determined from both the X-ray diffraction data and the transmission electron microscopy ...
Recent progress in the metallic conducting Langmuir-Blodgett (LB) films built from TTF derivative and fatty acids is reported. A simple LB method of transferring the mixed Langmuir (L) film of BEDO-TTF (BO) and stearic acid (SA) onto substrates provided metallic conducting LB films. A homogeneous L film formation on the water surface observed by Brewster angle microscope (BAM) is an essential factor for the well-ordered LB films. In the L film, the carboxylate group of fatty acid forms anion layer bringing about a spontaneous formation of mixed valence state (MVS) of BO layer. Similar spontaneous formation was also found in the molecular combination of nonoxygen-substituted donor of EDT-TTF and octadecanesulfonic acid (OS). This type of reaction would be useful for obtaining conducting LB films. For the LB films of ...
A radio frequency sputtering apparatus with a pair of targets has been developed for depositing a film of uniform thickness onto a complex-geometric specimen such as the retainer of a ball bearing. The deposition characteristics of the apparatus were compared with those of the conventional sputtering apparatus. Lubrication properties of MoS/sub 2/ films made by these devices were also compared under a variety of conditions. Finally, friction and wear of MoS/sub 2/ films applied to angular-contact type ball bearings of 20 mm bore were studied in air, nitrogen and vacuo. The two-target sputtering has an advantage mentioned above. However, the films deposited by the method exhibited a rather short wear life because of the temperature rise of the substrate during ion bombardment and during the sputtering process. This temperature dependence was observed in films on those substrates that ...
The composition of sputter-deposited HgS films was determined by electron microprobe analysis. From the relative x-ray intensity as a function of film thickness, the depth of the ionizations that produce SK sub(..cap alpha..) and HgM sub(..cap alpha..) was found to be approximately 0.65 ..mu..m at an accelerating voltage of 15 kV. This value agreed well with a value calculated from Castaings' empirical law after absorption correction. The determination of film composition was limited to sufficiently thicker films than this critical value, usually 1 - 2 ..mu..m thick. The relation between the conposition of bulk standard determined by chemical analysis and the x-ray intensity ratio was used for the correction of film composition. The results showed that the crystal structure of HgS films was independent of the composition, i.e., the growth of metastable ...
The composition of sputter-deposited HgS films was determined by electron microprobe analysis. From the relative x-ray intensity as a function of film thickness, the depth of the ionizations that produce SK sub(#alpha#) and HgM sub(#alpha#) was found to be approximately 0.65 #mu#m at an accelerating voltage of 15 kV. This value agreed well with a value calculated from Castaings' empirical law after absorption correction. The determination of film composition was limited to sufficiently thicker films than this critical value, usually 1 - 2 #mu#m thick. The relation between the conposition of bulk standard determined by chemical analysis and the x-ray intensity ratio was used for the correction of film composition. The results showed that the crystal structure of HgS films was independent of the composition, i.e., the growth of metastable #betta#-HgS ...
A bottom-up approach is used here to combine carbon nanotubes synthesized by CVD and organically capped platinum nanoparticles electrocatalyst exhibiting a direct electrochemical activity towards oxygen reduction. Both nano-objects are handled in liquid suspension and are associated together in a controlled way. The nanocomposite liquid dispersions can be precisely controlled in terms of platinum nanoparticles to carbon nanotubes weight ratios (NP/NT) which correspond to different coverages of nanotubes by nanoparticles. Electrodes with low to ultra-low platinum loadings can then be prepared on porous fuel cell carbon supports by filtration. The direct electrochemical activity towards aqueous oxygen reduction reaction (ORR) of electrodes with platinum loadings ranging from about 1 to 60 {mu}g/cm{sup 2} is reported without any activation step in order to keep the features of the nanoparticles intact. Before that, we studied the responses obtained when impregnating ...
Mesoporous films of platinized carbon nanotube-zirconia-Nafion composite have been used for the immobilization of tris(2,2prime-bipyridyl)ruthenium (II) (Ru(bpy)32+) on an electrode surface to yield a solid-state electrogenerated chemiluminescence (ECL) sensor. The composite films of Pt-CNT-zirconia-Nafion exhibit much larger pore diameter (3.55 nm) than that of Nafion (2.82 nm) and thus leading to much larger ECL response for tripropylamine (TPA) because of the fast diffusion of the analyte within the films. Due to the conducting and electrocatalytic features of CNTs and Pt nanoparticles, their incorporation into the zirconia-Nafion composite films resulted in the decreased electron transfer resistance within the films. The present ECL sensor based on the Pt-CNT-zirconia-Nafion gave a lin...
Nanocrystalline chromium oxynitride films were deposited by reactive RF magnetron sputtering of metallic chromium target in argon and helium atmospheres. The paper deals with consequence of increase in oxygen partial pressure on structural, hydrophobic and optical properties of chromium oxynitride films. The film stoichiometry changes from CrN and Cr2O3 to only Cr2O3 with increase in oxygen partial pressure as evident from X-Ray Diffraction analysis in both cases. The average crystallite size decreases with increase in oxygen partial pressure for both gas atmospheres. The thickness calculated from transmission data and surface profilometer are in good harmony with each other. The deposited films are hydrophobic by nature and the contact angle of the films varies as a function of surface ro...
Carbon films have been made by a variety of techniques, including evaporation, sputtering, and laser or thermal pyrolysis of organic polymers. Polyacrylonitrile (PAN) is often used as a carbon precursor, since low-temperature thermo-oxidative pretreatment produces a material which can be pyrolyzed without loss of shape. This is the basis for the production of carbon fibers with good mechanical properties. We report here the formation of very thin films of carbon (500 to 1500 A) by pyrolysis of spin-cast PAN. Using this technique, large, conductive films can be made which are sufficiently robust to allow intact lift-off and transfer of the films from one substrate to another. Such films are chemically inert, but can be photolithographically patterned and etched with an oxygen plasma.
In 1977 and 1978, Sandia National Laboratories, located in Albuquerque, New Mexico, and operated for the US Department of Energy (DOE), filmed a series of crash and fire tests performed on three casks designed to transport irradiated nuclear fuel assemblies. While the tests were performed to assess the applicability of scale and computer modeling techniques to actual accidents, films of them were quickly pressed into service by the DOE and nuclear utilities as ``proof`` to the public of the safety of the casks. In the public debate over the safety of irradiated nuclear fuel transportation, the films have served as the mainstay for the nuclear industry. Although the scripts of all the films were reviewed by USDOE officials before production, they contain numerous misleading concepts and images, and omit significant facts. The shorter versions eliminated qualifying statements contained in the longer ...
Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.
Grooving CVD diamond films using a focused ion beam (FIB) to quarry micro parts is described. The substrate-side surface of a polycrystalline diamond film which is prepared by means of microwave plasma CVD, is able to be grooved by a focused Ga ion beam scanned straight repeatedly. The groove has cross section whose shape is like an inverted Gaussian distribution curve. And the surface roughness of the films before grooved influences that of grooves. Under the same irradiation conditions, deeper, narrower, in short, high aspect ratio grooves are obtained on B-doped semiconducting microwave plasma CVD diamond films. Coating electrical conductive material is also effective method to obtain high aspect ratio grooves. It is supposed that these results are due to the degree of electrification on the surface and that FIB irradiation is a suitable method for micromachining semiconducting diamond ...
The surface films formed on type 316LN stainless steels (SS) with different nitrogen contents, during potentiodynamic polarization in acidified 1 M NaCl solution, were characterized by Laser Raman Spectroscopy (LRS). LRS confirmed the presence of oxides and oxychlorides of iron and chromium, hydrated chlorides and nitrates in the film. Raman mapping showed increasing nitrate content in the film with increasing nitrogen content. The film on the uncorroded material showed the presence of chromium and molybdenum oxides. The improvement in pitting corrosion resistance of type 316LN SS with increasing nitrogen content was attributed to increased amount of nitrates in the passive film.
The surface films formed on type 316LN stainless steels (SS) with different nitrogen contents, during potentiodynamic polarization in acidified 1 M NaCl solution, were characterized by Laser Raman Spectroscopy (LRS). LRS confirmed the presence of oxides and oxychlorides of iron and chromium, hydrated chlorides and nitrates in the film. Raman mapping showed increasing nitrate content in the film with increasing nitrogen content. The film on the uncorroded material showed the presence of chromium and molybdenum oxides. The improvement in pitting corrosion resistance of type 316LN SS with increasing nitrogen content was attributed to increased amount of nitrates in the passive film.
In this work the DC and AC characteristics for metal-LB film-metal structures deposited by a standard Langmuir-Blodgett film deposition technique are investigated. The conduction mechanism has been studied for a thin film structure in which a calix[4]arene substituted with carboxylic acid groups has been deposited alternately with a calix[4]arene molecule substituted with amine groups. This LB film structure shows a typical insulating behaviour for low voltage values and the Schottky effect becomes dominant when the voltage increases. The conductivity at low voltage values was found to be 1.34x10^-^1^3Scm^-^1. The height of the potential barrier was determined to be 1.65eV for this alternate layer LB film system.
The effect of surface treatment on the characteristics of the passive film on a super duplex stainless steel is addressed. Auger Electron Spectroscopy (AES) has been used to provide in-depth chemical profile analyses of the passivation film. This study showed that the constitution of the film is largely dependent on the electrolytic conditions under which it is produced or to which it is submitted. The passive films formed by polarisation in an alkaline solution (boric-borate solution) consist of two regions, an inner region rich in chromium and an outer region rich in iron, whilst the films produced in acid solution only present the chromium - rich region. The film thickness is also greatly affected by the polarisation conditions. It can vary from ca. 8 monolayers to about 20 monolayers for cathodically and anodically polarised specimens respectively. The ...
The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.) 30 refs.
The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.)
Surface study techniques were used to investigate films on Type 304 stainless steel which were formed during exposure to high purity water at 288"0C. The results indicated that the film chemistry depended strongly upon the concentration of the dissolved O_2 in the water. Films formed in water having 8 ppm O_2 were stoichiometric mixed oxides; whereas those formed in water with 10 ppb O_2 were highly defective oxyhydroxides. The latter films are not as protective as the stoichiometric oxides. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to investigate the films. (Auth.).
In this work passive films formed in AISI 304 stainless steel were envisaged as semiconductors and studied by means of photoelectrochemistry and Mott-Schottky plots. The passive films were potentiostatically formed at different potentials (0.2-0.8V) in a basic borate/boric acid solution without and with addition of NaCl (0.5 and 1g/l) and at various temperatures in the range 8-60"oC. The influence of these parameters on the photocurrent, quantum efficiency, bandgap energy and density of charge carriers was determined. The results show that the experimental conditions at which the films are formed influence the semiconductive properties of the film, which seem to be related to the higher or lower stability of the film. An Arrhenius type of relationship was also found between the density of charge carriers and temperature, leading to the determination of an activation energy. (author) ...
Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.
We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post-growth ...
The construction materials used in coolant systems in nuclear power plants become covered with oxide films as a result of exposure to the aqueous environment. The susceptibility of the materials to different forms of corrosion, as well as the extent of the incorporation of radioactive species on the surfaces of the primary circuit, are greatly influenced by the physical and chemical properties of these oxide films. The composition and characteristics of the oxide films in turn depend on the applied water chemistry. This work was undertaken in order to collect and evaluate the present views on the structure and behaviour of oxide films formed on iron- and nickel-based materials in aqueous environments. This survey should serve to recognise the areas in which more understanding and research effort is needed. The review begins with a discussion on the bulk oxides of iron, nickel and chromium, as well as ...
A method for using in situ X-ray absorption near edge spectroscopy to determine the composition of passive, transpassive, and nonreducible thin oxide films is described. The method is demonstrated by determining the composition of the passive films formed in pH 4.5, 0.1 M acetate buffer, on 100 {angstrom} thick Fe-yCr alloys (y = 8.5, 15, 19, 23 atom %) at potentials: (1) low in the passive region ({minus}0.3 V vs. mercurous sulfate reference electrode, MSE); (2) high in the passive region; (3) in the transpassive region; and (4) in the cathodic region where the air-formed film is not fully reduced. The nonreducible film at {minus}1.2 V is entirely a Cr{sup 3+} oxide/hydroxide. This nonreducible film persists at anodic potentials. At {minus}0.3 V, the passive film on each alloy is significantly enriched in Cr. The film at {minus}0.3 V ...
In this work, amorphous hydrocarbon (a-C:H) film deposition on metallic mirrors was studied during working shots in tokamak T-10 and at exposure in Ar/CHD3/D2 dc magnetron discharge in a special laboratory high vacuum setup. Analysis of film composition (including hydrogen content) was carried out using nuclear physical methods. Thickness and optical parameters (refractive and extinction coefficients) of the films were estimated by ellipsometry. Laboratory films can be characterized as soft a-C:H films in comparison with hard tokamak films (? = 1.2 and 1.8 g/cm3, respectively). For the first one, a linear dependence of deposition rate on mirror temperature was observed in a wide temperature range. The addition of methane into initial Ar/D2 magnetron gas mixture leads to an increase of deposition rate. The data obtained should be taken into account to prevent ...
Thin film solar cells and solar cell testing - photovoltaic cells, radiation damage to cadmium sulfide solar cells, and airplane testing of solar cells
This paper addresses one source of degradation in OPV devices: the metal/organic interface. The basic approach was to study the completed device stability vs. the stability of the organic film itself as shown in subsequent devices fabricated from the films.
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is ...
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both ...
Rheological properties of moderately concentrated solutions of cellulose in methylmorpholine N-oxide-dimethylformamide mixtures containing hydrophilic montmorillonite nanoparticles were studied. Film composite materials were prepared, and their physicomechanical properties and structural organization were studied.
Highly resistant, high-transmittance woodceramic thin films were prepared using rf magnetron sputtering of a woodceramic disk in argon plasma. A film series was deposited based on substrate temperature, which was varied from 50 to 500 degree C. The film's electrical and optical properties depended on substrate temperature. Films deposited below 300 degree C were insulative, {rho}>10{sup 10} {omega} {center_dot} cm. Films deposited at 50 degree C had a density of 1.9-2.2 g/cm{sup 3} comparable to that of single crystal graphite. Below 200 degree C, films had higher transmittance than typical DLC films in the visible and infrared region. Infrared C-H absorption spectrum was observed by Ft-IR and there exist two types of bonding corresponding to sp{sup 2} or SP{sup 3}. (author)
The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The Eg values of the CdO films were found to be in the range of 2.26?2.60?eV. The Eg values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size o...
Buccal bioadhesive films, releasing topical drugs in the oral cavity at a slow and predetermined rate, provide distinct advantages over traditional dosage forms. The aim of present study was to prepare...Full Text Available
A thin-film evaporator requires only a short heating time to concentrate a solution since it has a high thermal efficiency and has a small capacity. Thus, the chemical industry often uses this type of evaporator for concentrating materials that are subjec...
Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.
Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.
An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available
The passive films formed on iron metal, alloys or stainless steel are extremely thin oxides or hydroxides and possess the properties of high chemical stability in the environment. These films show characteristics interested both electrical as well as electrochemical point of view due to the thin thickness of the films. Auger Electron Spectroscopy, X-ray Photoelectron spectroscopy and so on which are the conventional electrochemical measurement methods or the surface analysis methods are used for the analysis and evaluation of these films, however, at present, the application of research technique focusing the superconductor characteristics of the films are tried. Although, the potential modulation reflection spectroscopy method has merits like possibility of in-situ measurement, high precision, possibility of stable analysis even for extremely thin film and so ...
This report discusses the development of transition metal oxide semiconductors for photoelectrolysis of water. More specifically, it involves preparation of TiO/sub 2/ films by sputtering and evaluating their physicochemical characteristics primarily as they relate to the behaviour of the films as photoanodes. Impedance, photoelectrochemical, and photoconduction properties of TiO/sub 2/ films sputtered in pure O/sub 2/ onto heated substrates have been determined as a function of O/sub 2/ pressure during sputtering, film thickness, Pt overcoating, and cathodic treatment. The capacitance data before cathodic treatment are of the form expected. The capacitance is essentially independent of potential, while for potentials increasingly cathodic of this value, the capacitance increases very rapidly. Cathodic treatment alters the impedance characteristics of the films but leads to either ...
In order to understand the anodic behaviour of Al--Mo and Al--W amorphous alloys in the borate buffer electrolyte, samples of these alloys were polarized galvanostatically. The resultant anodic films were thicker than the passive films formed during potentiodynamic polarization enabling detailed examination of the films and alloy substrates by surface analytical methods. AES investigations suggest that the anodic films formed at low and moderate voltages on Al--Mo or Al--W amorphous alloys consist of Al-oxide, whereas refractory metals remain unoxidized and enriched at the film/substrate interface. Molybdenum and tungsten act as 'dissolution moderators', restraining the substrate dissolution process at the film/substrate interface. However, after anodization at high voltages (50 V), AES revealed the presence of an oxidized refractory metal in ...
European research in green energy production from crops has resulted in the development of full scale bioreactors that use energy crops as feedstock. Switchgrass has been touted as one of the most promising crops for energy production among several perennial grass species grown under moderate to hot climates. However, few studies have been conducted in colder climate conditions. This study examined the mesophilic methane yield of switchgrass grown under the cooler growing conditions that exist in northeastern North America. In 2007, switchgrass was harvested in late July, August and September and conserved as silage. The regrowth of plots harvested in late July was also harvested in late September as a two-cut strategy. A 30 L small-scale laboratory digester was used to anaerobically digest the switchgrass silage samples. Specific methane yield decreased considerably with advancing plant development, but was similar between the first harvest in ...
Photorefractives, in general, are among the most promising materials solutions to real time optical correlation. Applications include military target recognition and civilian robotic vision. Crystals of sillenite structure photorefractives, Bi12XO20, where X equals Si, Ge, or Ti, have been grown by melt techniques and in the case of bismuth silicon oxide (BSO) and bismuth titanium oxide (BTO) by the hydrothermal method of high-temperature/high-pressure solution growth. The two growth methods are discussed and crystals grown by the two methods are compared in this paper. Optical absorption and TSC studies show that hydrothermal BSO is essentially free of the native antisite Bi defect which usually acts as a donor. These studies also show that the trap density is greatly reduced in hydrothermal material. Preliminary experiments show that hydrothermal BTO crystals have improved properties over melt grown samples. Al and P act ...
To improve organic electronic applications, knowledge about microscopic mechanisms determining the charge carrier mobilities is pivotal. 9,10-Diphenylanthracene (DPA) has been identified as model system to study those correlations due to its high electron and hole mobilities at room temperature and its complex structural phase behaviour. We demonstrate our temperature dependent Time-Of-Flight data on single crystals grown by vapor phase transport (VPT) and by Bridgman growth technique. Both preparation techniques revealed crystals of different morphologies resulting in significant variations of the related bipolar mobilities. As a key result, the charge carrier mobility of {proportional_to}1 cm{sup 2}/Vs at room temperature along the (111)-direction of Bridgman crystals exceeds that along the (001)-direction of VPT grown crystals by about one order of magnitude. The observed differences in the mobility data are discussed in the context of the ...
Experimental investigations of the turbulence characteristics of the air flow above the wave surface of the film in the horizontal rectangular channel in the 5-20 m/s velosity range of the air rate change (Reynolds number for the air 120O0-48000, 100-1000 for the film) are carried out. It is shown that intensities of turbulent pulsations of the rate increase with the growth of liquid flow rate in the film especially in the region of large squall waves. The experimental results on the pulsations are presented in the dimensionless form by a universal dependence. Distributions of tangentials of turbulent stresses above the film are obtained, turbulent stresses are compared with friction losses at the phase interface.
17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.
17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.
Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si_3N_4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decrease, and the densification of the film increases. When the temperature is up to 360 degree C, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si_3N_4 films is also examined
The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.
The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.
The passive corrosion rate of Alloy 22 is exceptionally low in a wide range of aqueous solutions, temperatures and electrochemical potentials, Alloy 22 contains approximately 22% chromium (Cr) by weight; thus, it forms a Cr-rich passive film in most environments. Very little is known about the composition, thickness and other properties of this passive film. The aim of this research was to determine the general characteristics of the oxide film that forms on Alloy 22, as a function of solution pH, temperature and applied electrochemical potential.
A temperature gradient across a thick ({ge}.1mm) film selective emitter will produce a significant reduction in the spectral emittance from the no temperature gradient case. Thick film selective emitters of rare earth doped host materials such as yttrium-aluminum-garnet (YAG) are examples where temperature gradient effects are important. In this paper a model is developed for the spectral emittance assuming a linear temperature gradient across the film. Results of the model indicate that temperature gradients will result in reductions the order of 20{percent} or more in the spectral emittance. {copyright} {ital 1997 American Institute of Physics.}
Evolution of the passive films formed on AISI 304L and duplex stainless steel SAF 2205 in NaOH 0.1 M was investigated using cyclic voltammetry, electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS). Special attention is paid to the effect of Mo in the generation of the films. Results point out to the stabilising effect of the molybdates on the surface of the film, enhancing the formation of a thin layer on the SAF 2205 with a higher Cr/Fe ratio.
One of the main problems related to optical thin film materials used in high power laser environments is the catastrophic damage caused to them due to laser irradiation. While the influence of ion bombardment on the optical properties of oxide thin films is now a well understood subject, the morphology and crystalline behaviour of these films under ion incidence is not so well studied. Hence, it is of great importance to investigate the effects of ion bombardment during growth on the microstructure and crystalline behaviour of oxide materials.
Photocurrent measurements for stainless steel type 304 in the as-received condition after dc and AV (alternating voltage) passivation have confirmed that significant changes of the passive film properties occur due to AV passivation. The photocurrents were the highest for the sample treated by the AV passivation process (AVPP). The bandgap energy increased from about 2.8 to about 3.05 eV for this treatment. Very similar results have been obtained for pure chromium, which suggests that the AVPP produces a thicker passive film with a less defective nature due to a partial dehydration of the chromium oxide phase in the film.
... analyzer section for angle resolved measurements, and a thin film evaporator with a quartz crystal microbalance to measure the mass deposition. ...
A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.
Contrary to the electronic excitation induced phenomena of desorption and sputtering, we observed incorporation of oxygen in a thin Fe film during its irradiation with swift heavy ions. It is observed that the adsorbed oxygen diffuses in to the Fe film. The incorporation of oxygen and its diffusion in the bulk of the film is a manifestation of extremely large electronic energy deposition by the incident ions. It is shown that the experimentally observed high diffusivity of oxygen in Fe during irradiation is due to the existence of transient melt phase of Fe.
The state of lithium electrode surface after contact with triethylamine-modified propylene carbonate solutions of lithium perchlorate was studied using the pulse galvanostatic technique as well as methods of SIMS and electron microscopy. It was shown that amine added into the solutions stabilizes the state of lithium and prevents the formation of a secondary porous passive film on the lithium surface. Chemical composition of the primary film remains unchanged. Certain properties of passive films formed in electrolyte solutions studied were evaluated.
The bibliography contains citations concerning the properties of tantalum and tantalum compound films formed by sputtering techniques. Topics include processes, and electrical, magnetic, and dielectric properties of the sputtered films. Tantalum compounds studied include nitrates, oxides, and aluminides. The structural properties of sputtered films are also discussed. (Contains a minimum of 105 citations and includes a subject term index and title list.)
Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with ...
Results are presented of experiments on partial discharge in liquid nitrogen, including insulation breakdown characteristics of liquid nitrogen, partial discharge characteristics of composite insulation systems, lifetime of polymer films, impulse breakdown of polymer films in liquid nitrogen, etc. The partial discharge characteristics of liquid nitrogen are examined with increasing liquid-nitrogen pressure. It is concluded that a composite insulation structure of polymer film and liquid nitrogen can be used as effective electrical insulators at cryogenic temperatures.
We study the growth of colonies of the yeast Pichia membranaefaciens on agarose film. The growth conditions are controlled in a setup where nutrients are supplied through an agarose film suspended over a solution of nutrients. As the thickness of the agarose film is varied, the morphology of the front of the colony changes. The growth of the front is modeled by coupling it to a diffusive field of inhibitory metabolites. Qualitative agreement with experiments suggests that such a coupling is responsible for the observed instability of the front.
The study by impedance and photoelectrochemical measurements of passive films formed on an AISI 304 type stainless steel shows that important parameters of the electronic structure of these films are modified under ..cap alpha.. irradiation, namely: width of the space charge region, donors concentration and diffusion length for minority carriers. The consequences of ..cap alpha.. irradiation on localized corrosion processes are discussed.
The study by impedance and photoelectrochemical measurements of passive films formed on an AISI 304 type stainless steel shows that important parameters of the electronic structure of these films are modified under #alpha# irradiation, namely: width of the space charge region, donors concentration and diffusion length for minority carriers. The consequences of #alpha# irradiation on localized corrosion processes are discussed.
The structure of hydroxylated oxide films (passive films) formed on Cr(110) in 0.5 M H{sub 2}SO{sub 4} at +0.35, +0.55, and +0.75 V/SHE has been investigated by in situ scanning tunneling microscopy (STM). Cathodic reduction pretreatments at {minus}0.54, {minus}0.64, and {minus}0.74 V/SHE destroy the well-defined topography of the single-crystal electrode and they have been excluded from the passivation procedure. Two different passive film structures have been observed, depending on the potential and time of passivation. At low potential (+0.35 V/SHE), the passive film, consisting mostly of chromium hydroxide, has a noncrystalline and granular structure whose roughness suggests local variations of thickness of ca. {+-} 0.5 nm. A similar structure is observed at higher potential (+0.55 V/SHE), but only for a short polarization time. For longer polarization at 0.55 V/SHE, and at higher potentials (+0.75 ...
General corrosion behavior of ALLOY 800 in high temperature water was studied in relation to its surface film structure. The surface film formed in water was found to decrease the corrosion rate of ALLOY 800. This film is composed of Ni ferrite, and can be obtained by oxidation in air or steam. Based on these results, air or steam oxidation treatment to inhibit Ni and Co release of ALLOY 800 into high temperature water is proposed. (author).
General corrosion behavior of ALLOY 800 in high temperature water was studied in relation to its surface film structure. The surface film formed in water was found to decrease the corrosion rate of ALLOY 800. This film is composed of Ni ferrite, and can be obtained by oxidation in air or steam. Based on these results, air or steam oxidation treatment to inhibit Ni and Co release of ALLOY 800 into high temperature water is proposed. (author).
The structure of a fragment of the germanium complex compound (GCC) with oxyethylidenediphosphonic acid and the adsorption properties of GCC films with respect to the vapors of water and some other organic liquids have been studied. The electric conductivity of GCC films has been investigated, and its mechanism has been explained.
Deposition of CN-based films by a novel version of active screen plasma nitriding, aiming at surface modification of polymers, is reported. The approach relies on the use of pure graphite as the grid material, which was found to act both as an active screen and as a dry source of carbon atoms for the synthesis of thin films consisting mainly of a stoichiometric CN layer with columnar-type structure and dome-like nanostructured morphology.
Radionuclide X-ray fluorescence analysis was used for the determination of Cu, Y and Ba in very thin high-temperature superconducting films. The precision of the method is better than 3% for about 1 #mu#m thick films. The atomic emission ICP spectrometry was used to testify results of XRF analysis. An acceptable agreement of both methods was obtained. (author) 4 refs.; 2 tabs.
Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.
Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.
A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.
The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.
Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.
AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow rid structures were 300 A/cm{sup 2} and 330 A/cm{sup 2} for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87--89% and the internal losses of 7--10 cm{sup {minus}1} were obtained.
Pots used for experiments conducted on plants grown in them create rooting environments that are affected by limited soil volume, which can affect various physiological processes, including transpiration, and plant growth. However, the applicability of results from pot experiments to the field has received limited attention. The objective of this study was to compare the growth and transpiration of maize (Zea mays L.) and winter wheat (Triticum aestivum L.) when grown in pots and field plots under various constant water deficits. The experiments were conducted under similar environmental conditions for both pots and plots. Transpirational responses at both transient (RTTr) and daily (RDTr) time scales to a decreasing fraction of available soil water (FASW) were analyzed. For a comparable F...
The function of selenium in an organism is mediated mostly by selenoproteins including glutathione peroxidase. Glutathione peroxidase is a potent anti-oxidative enzyme, scavenging a variety of peroxides. The green alga Scenedesmus quadricauda was used to investigate the relationship between the toxicity of selenium and the glutathione peroxidase activity. Selenium resistant strains SeIV and SeVI were synchronized and grown in high concentrations of Se (selenite or selenate). As a measure of selenium toxicity the EC50 values were determined. During growth of the untreated wild type, glutathione peroxidase activity increased slightly and then declined gradually until the end of the cell cycle. A similar pattern was observed in untreated resistant strains and when resistant strains were grown...
Field-grown snap bean plants were treated with simulated acidic rain applied either alone or in combination with ambient rain and the effects on growth and yield were determined. In plots where ambient rain was excluded, a retractable canopy was activated to shield the crop. Four levels of acidity at pH values of 5.0, 4.2, 3.4 and 2.6 were applied in four replicate treatments and the experiment was conducted in two successive years (1981 and 1982). In plots that received only simulated rain, yield was not adversely affected by acidic rain; in 1981, a positive linear relationship was present between acidity of simulated rain and yield, but in 1981, no effect was found. In contrast, in plots that received both simulated and ambient rain, a negative linear relationship between acidity in simulated rain and yield was observed in both years.
Lupinus albus L. plants were grown from seeds and irradiated at various stages of development with acute or chronic gamma rays. All plants were greenhouse grown (pre- and post-irradiation) and allowed to proceed through their normal growth cycle. The purpose of these experiments was to establish a Plactochron Index for Lupinus albus L. and to determine the effects of acute and chronic irradiation on development at the macro and microscopic levels. A Plastochron Index was calculated and used as an indirect time scale to evaluate the effects of gamma rays from a common base line. Acute radiation treatment lasted for a period of a few days, whereas chronic treatment was initiated at the seedling stage and lasted for the entire growth season. Vegetative plants were used to study the effects of acute radiation exposure on apical meristem morphology, Plastochron Index, phyllatoxis and gross morphology.
Dielectric and thermal characteristics of gel grown single crystals of ytterbium tartrate trihydrate have been carried out. The dielectric constant has been measured as a function of frequency in the range 2?kHz?1?MHz and temperature range 30?300??C. The dielectric constant increases with temperature, attains a peak near 215??C, and then decreases as the temperature exceeds 215??C. The dielectric anomaly at 215??C is suggested to be due to phase transition brought about in the material. The dielectric behaviour of the material is correlated with the results on thermal analysis. Thermogravimetric and differential thermal analysis have been used to study the thermal characteristics of the material. The experimental results show that the material is thermally stable up to 200??C. The decompos...
Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 [mu]m. The stripe was defined by reactive ion etching. A threshold current of 22 mA was reproducibly obtained on a laser length of 500 [mu]m. A CW output power of 48 mW per facet was achieved. In addition, preliminary accelerated aging tests have shown the high reliability the structure. (orig.)
A study has been made of the passive film remaining over pits on stainless steel using a high resolution transmission electron microscope. Type 305 stainless steel was passivated in a borate buffer solution and pitted in ferric chloride. Passive films formed at 0.2 V relative to a saturated calomel electrode were found to be amorphous. Films formed at higher potentials showed only broad diffraction rings. The passive film was found to cover a remnant lacy structure formed over pits passivated at 0.8 V. The metallic strands of the lace were roughly hemitubular in shape with the curved surface facing the center of the pit.
Continuous freestanding SiC(Al) films were fabricated by melt spinning the aluminum-containing polycarbosilane (A-PCS) precursor. The results showed that the films contained #beta#-SiC crystals, #alpha#-SiC nano-crystals, C clusters and small amount of Al_4O_4C and Al_4SiC_4. The Al atoms in the films played important roles as both sintering aids and grain growth inhibitor. The PL spectrum showed a wide luminescence band from 320 nm to 440 nm, and the origin of PL centered at 385 nm might be related to the #alpha#-SiC nano-crystals using quantum size effects. The obtained films are expected to have important applications in MEMS for the environment of high temperature and optoelectronic devices.
Moss-Schottky plots and photoelectrochemical measurements were made on films formed at different potentials on AISI 304 stainless steel in a borate/boric acid solution, pH 9.2. The results allowed the determination of the semiconductive properties and band structure of the films, which account for the existence of two kinds of films depending on the formation potential. For potentials below 0 V (SCE), the results point out for a film with an inverse spinel structure constituted by Cr-substituted magnetite with two donor levels. Above 0 V only one donor level is detected, which should be Fe{sup 2 +} on tetrahedral sites.
Moss-Schottky plots and photoelectrochemical measurements were made on films formed at different potentials on AISI 304 stainless steel in a borate/boric acid solution, pH 9.2. The results allowed the determination of the semiconductive properties and band structure of the films, which account for the existence of two kinds of films depending on the formation potential. For potentials below 0 V (SCE), the results point out for a film with an inverse spinel structure constituted by Cr-substituted magnetite with two donor levels. Above 0 V only one donor level is detected, which should be Fe"2 "+ on tetrahedral sites.
The passive films formed on 316L stainless steel in various NaCl solutions have been investigated by capacitance measurements (Mott-Schottky). Pitting parameters have been determined using the galvano-kinetic polarisation method. The obtained results reveal the existence of a shallow and a deep donor level localised in the band gap of the semiconducting oxide film. These energy levels are due to iron ions in the tetrahedral and octahedral positions. It also appears that the participation of the deep donor level effects the electric field. The study developed allows us to compare characteristic parameters of the electronic structure of the passive film to those related to pitting susceptibility. (authors) 25 refs.
The goal of this research program is to determine whether pulsed laser deposition is an effective alternative method for growing TiCN thin films. Pulsed laser deposition (PLD) is chosen because of its well-documented capability for growing uniform, stoichiometric films in ultra-high vacuum or gaseous environments. Processing of thin films by PLD is also achieved at relatively low temperatures compared with CVD processing. Given these attributes, the primary objectives in this article are to determine whether nitrogen may be readily incorporated into films resulting from the laser-ablation of TiC in an N{sub 2} environment, determine what effect nitrogen has on mechanical properties, and determine whether nitrogen incorporation is strongly influenced by processes unrelated to laser deposition (e.g., thermally-activated surface reactions).
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke ...
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke ...
This work aimed to develop a fast-dissolving film made of low dextrose equivalent maltodextrins (MDX) containing nicotine hydrogen tartrate salt (NHT). Particular attention was given to the selection of the suitable taste-masking agent (TMA) and the characterisation of the ductility and flexibility under different mechanical stresses. MDX with two different dextrose equivalents (DEs), namely DE 6 and DE 12, were selected in order to evaluate the effect of polymer molecular weight on film tensile properties. The bitterness and astringency intensity of NHT and the suppression effect of several TMA were evaluated by a Taste-Sensing System. The films were characterised in term of NHT content, tensile properties, disintegration time and drug dissolution test. As expected, placebo films made of ...
In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.
Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.
We have measured K-edge X-ray absorption spectra of argon in sputtered aluminum films at a synchrotron radiation facility (the Photon Factory). We found that the energy and shape of white line change when the film is annealed at 500 C and the spectrum becomes resembling that of argon implanted in silicon. From the analyses of the X-ray absorption spectra and TEM observation we concluded that argon exists as very small atom clusters with a diameter less than 1 nm or exist as isolated atoms in the as-sputtered aluminum film, and that the size of the clusters become as big as 10 nm diameter when the film is heated. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)
Chromium nitride thin films were deposited on SA-304 stainless steel substrates by using direct-current reactive magnetron sputtering. The influence of process conditions such as nitrogen content in the fed gas, substrate temperature, and different sputtering gases on microstructural characteristics of the films was investigated. The films showed (200) preferred orientation at low nitrogen content (< 30%) in the fed gas. The formation of Cr_2N and CrN phases was observed when 30% and 40% N_2 were used, with a balance of Ar, respectively. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the morphology and surface topography of the thin films, respectively. Microhardness tests showed a maximum hardness of 16.95 GPa for the 30% nitrogen content.
Passive films formed on Alloy 690 in different pH solutions at high temperatures were studied by potentiodynamic polarization, Auger electron spectroscopy, thermodynamic diagrams and the Mott-Schottky relation. The chemical compositions and electronic structures of the passive films were found to be strongly pH-dependent. In alkaline solutions, a secondary passivation was clearly observed on potentiodynamic polarization curves. The passive films were a mixture of Cr{sub 2}O{sub 3} and FeCr{sub 2}O{sub 4} below the flat band potential of nickel oxide and were NiFe{sub 2}O{sub 4} above this potential. Electronic structure models, describing the electrochemical properties of the passive films, are proposed and discussed.
Passive films formed on Alloy 690 in different pH solutions at high temperatures were studied by potentiodynamic polarization, Auger electron spectroscopy, thermodynamic diagrams and the Mott-Schottky relation. The chemical compositions and electronic structures of the passive films were found to be strongly pH-dependent. In alkaline solutions, a secondary passivation was clearly observed on potentiodynamic polarization curves. The passive films were a mixture of Cr2O3 and FeCr2O4 below the flat band potential of nickel oxide and were NiFe2O4 above this potential. Electronic structure models, describing the electrochemical properties of the passive films, are proposed and discussed.
The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.
Passive films formed on Alloy 690 in high-temperature alkaline environments were investigated by potentiodynamic polarization, X-ray photoelectron spectroscopy, transmission electron microscopy and Mott-Schottky approach. Passive current density and donor density of the passive films increase with increasing temperature, due to increased diffusion rates of metallic ions and dehydration of hydroxide phases. The passive films show a duplex structure including an inner layer of fine-grained Cr oxide or spinel oxide and an outer layer of Ni-Fe spinel oxide and Ni hydroxide. A growth model of the passive films on Alloy 690 in high-temperature alkaline environments is proposed and discussed.
Passive films formed on Alloy 690 in high-temperature alkaline environments were investigated by potentiodynamic polarization, X-ray photoelectron spectroscopy, transmission electron microscopy and Mott-Schottky approach. Passive current density and donor density of the passive films increase with increasing temperature, due to increased diffusion rates of metallic ions and dehydration of hydroxide phases. The passive films show a duplex structure including an inner layer of fine-grained Cr oxide or spinel oxide and an outer layer of Ni-Fe spinel oxide and Ni hydroxide. A growth model of the passive films on Alloy 690 in high-temperature alkaline environments is proposed and discussed.
It is well known that a protective film is formed on the graphite negative electrode in ethylene carbonate (EC) electrolyte solution. This film is lithium-ion conductive and protects the decomposition of the electrolyte solution. In the present paper, the electrode/electrolyte interfaces in lithium-ion rechargeable batteries were characterized by three-dimensional complex impedance plots, whose axes are real, imaginary parts and time. The film resistance R {sub sei} and charge transfer resistance R {sub ct} were determined for negative electrodes in EC/ethyl methyl carbonate (EMC) electrolyte solution, and the formation mechanisms of the interfacial film were discussed. Furthermore, the contributions of vinylene carbonate and ethylene sulfite, which are added into the electrolyte solution for the film formation, were investigated.
It is well known that a protective film is formed on the graphite negative electrode in ethylene carbonate (EC) electrolyte solution. This film is lithium-ion conductive and protects the decomposition of the electrolyte solution. In the present paper, the electrode/electrolyte interfaces in lithium-ion rechargeable batteries were characterized by three-dimensional complex impedance plots, whose axes are real, imaginary parts and time. The film resistance R _s_e_i and charge transfer resistance R _c_t were determined for negative electrodes in EC/ethyl methyl carbonate (EMC) electrolyte solution, and the formation mechanisms of the interfacial film were discussed. Furthermore, the contributions of vinylene carbonate and ethylene sulfite, which are added into the electrolyte solution for the film formation, were investigated.
In this work, effects of coolant chemistry, including concentrations of chloride ions and ethylene glycol and addition of various ions, on corrosion of 3003 Al alloy were investigated by electrochemical impedance spectroscopy measurements and scanning electron microscopy characterization. In chloride-free, ethylene glycol-water solution, a layer of Al-alcohol film is proposed to form on the electrode surface. With the increase of ethylene glycol concentration, more Al-alcohol film is formed, resulting in the increase in film resistance and charge-transfer resistance. In the presence of Cl- ions, they would be involved in the film formation, decreasing the stability of the film. In 50% ethylene glycol-water solution, the threshold value of Cl- concentration for pitting initiation is within ...
In 16 female patients wick colpourethrocystography was performed directly successively with large-size films as well as medium-size films (intensifier fluorography). The area exposure products were measured by a dosemeter closely attached to the diaphragm and separately for radiography and fluorography, resp. Surface doses as well as organ doses were calculated according to Rosenstein. The average radiatin doses of the active bone marrow were 6.03 mGy for examination with large-size films and 1.27 mGy for fluorography; the average gonadal doses were 7.45 mGy and 1.56 mGy, resp. The portion of fluoroscopy in radiation exposure amounted to 14.8% in large-size film examination, but was 74.0% in medium-size examination. Thus the comparative results revealed a significant reduction of the patient's radiation dose by application of intensifier fluorography in colpourethrocystography.
Abstract:- Campylobacter jejuni-is the leading cause of bacterial diarrheal illness worldwide. Many strains are now becoming multidrug resistant. Apple-based edible films containing carvacrol and cinnamaldehyde were evaluated for bactericidal activity against antibiotic resistant and susceptible-C. jejuni-strains on chicken. Retail chicken breast samples inoculated with D28a and H2a (resistant strains) and A24a (a sensitive strain) were wrapped in apple films containing cinnamaldehyde or carvacrol at 0.5%, 1.5%, and 3% concentrations, and then incubated at 4 or 23 C for 72 h. Immediately after wrapping and at 72 h, samples were plated for enumeration of viable-C. jejuni. The antimicrobial films exhibited dose- and temperature-dependent bactericidal activity against all strains. Films with ...
Iron oxide thin films were prepared by spray pyrolysis technique onto glass substrates from iron chloride solution. They were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and (UV-vis) spectroscopy. The films deposited at T _s #<=# 450 deg. C were amorphous; while those produced at T _s_u_b = 500 deg. C were polycrystalline #alpha#-Fe_2O_3 with a preferential orientation along the (1 0 4) direction. By observing scanning electron microscopy (SEM), it was seen that iron oxide films were relatively homogeneous uniform and had a good adherence to the glass substrates. The grain size was found (by RX) between 19 and 25 nm. The composition of these films was examined by X-ray photoelectron spectroscopy and electron probe microanalysis (EPMA). These films exhibited also a transmittance value about 80% in the ...
Iron oxide films have been deposited on Si(100) substrates by chemical vapour deposition (CVD) of iron(III) tert-butoxide ([Fe(O "tBu)_3]_2) in the temperature range 350-450 deg. C. The precursor flux and substrate temperature were varied to control the phase composition, average grain size and film thickness. The nature of substrate and deposition temperature markedly influence the morphology and iron-oxygen stoichiometry in the CVD deposits. Phase transformations in iron oxide films were achieved through precise local and periodic heating of the films by interfering laser beams. The interaction of iron oxide films with short laser pulses (Nd:YAG, 355 nm) induced partial transformation of hematite (#alpha#-Fe_2O_3) to magnetite (Fe_3O_4) or magnetite to wuestite (Fe_1_-_xO), respectively. The phase characterization and morphology of the hematite and magnetite ...
The plastic displacements around Knoop indentations made in hard titanium/aluminum multilayered films on soft aluminum alloy substrates have been studied. Indentations were cross-sectioned and imaged using the focused-ion-beam (FIB) milling and high-resolution scanning electron microscopy (SEM), respectively. The FIB milling method has the advantage of removing material in a localized region without producing mechanical damage to the specimen. The micrographs of the cross-sectioned indentations indicate that most of the plastic deformation around the indentation is dominated by the soft aluminum substrate. There is a very small change in the multilayered film thickness around the indentation{emdash}less than 10{percent}. The plastic deformation of the thin film resembles a membrane being deflected by a localized pressure gradient across the membrane. Stress-induced voids are also observed in the multilayered ...
Investigations of the properties of absorbed monolayers have received great experimental and theoretical attention recently, both because of the importance of surface processes in practical applications such as catalysis, and the importance of such systems to the understanding of the fundamentals of thermodynamics in two dimensions. We have adapted the composite bolometer technology to the construction of microcalorimeters. For these calorimeters, the adsorption substrate is an evaporated film deposited on one surface of an optically polished sapphire wafer. This approach has allowed us to make the first measurements of the heat capacity of submonolayer films of /sup 4/He adsorbed on metallic films. In contrast to measurements of /sup 4/He adsorbed on all other insulating substrates, we have shown that /sup 4/He on silver films occupies a two-dimensional gas phase over a broad range of coverages and ...
The properties of ZnO films were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnO films decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnO films increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300degreeC were 2186cm and 798cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnO films annealed in vacuum and H2/Ar ambients at 600degreeC were similar with 0.040cm and 0.035cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnO films annealed in ambient H2/Ar at low temperatures. The average optical transmission was >82%...
In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si ...
Focused-ion beam (FIB) milling provides rapid fabrication of individual cylindrical submicrometer channels with reproducible dimensions (#+-#5% diameters) through 8-#mu#m thick poly(methylmethacrylate) (PMMA) films. PMMA films are spincast on sacrificial Si carriers and sputter-coated with Au before the 30-kV gallium FIB milling process. By adding a trace amount of poly(ethyleneoxide) and poly(dimethylsiloxane) to the PMMA solution before casting, the films can be released for subsequent mounting in microfluidic devices to create hybrid microfluidic-nanofluidic multilevel architectures. In situ FIB sectioning demonstrates the smooth cylindrical surface within the pore. Placing a milled film in contact with an aqueous fluorescein solution fills the channel by capillary action, as verified by confocal fluorescence microscopy. Confocal fluorescence of dyed films reveals that the pores ...
The total hemispherical emittance of an oxide film that formed on 6061-T6 aluminium alloy parts in the Tower Shielding Reactor-II at Oak Ridge National Laboratory was measured from 295 to 773 K using an emissometer and/or a calorimeter. The emittance of this film was critically needed for heat transfer calculations in a simulated loss-of-coolant accident of the reactor. X-ray diffraction analysis identified the film as boehmite (Al{sub 2}O{sub 3} {times} H{sub 2}O), which dehydrated to alumina (Al{sub 2}O{sub 3}) upon heating above 473 K. The measured emittances for the alumina film are in excellent agreement with published values for anodized aluminum films and for bulk alumina. Published values of the emittance of boehmite could not be found for comparison, but evidence is presented that some anodization processes for aluminum yield boehmite and not alumina ...
Pulsed laser deposition (PLD) is known for its capacity to reproduce a target composition on a substrate. The authors have used this deposition technique to produce thin films of transition metal chalcogenides. However, the deposits were always deficient in Te relative to the starting material (composed by a refractory metal (niobium) and a chalcogene (tellurium)). Variations of the interreticular distances have been observed with respect to fluence and substrate temperature. The authors show that spatial composition of the films is determined by a degree of crystallinity of deposit and by the reaction of formation of Te{sub 2} molecule within laser induced plume. Two kinds of deposits have been obtained: Nb{sub 5}Te{sub 4}-type thin films which have a one-dimensional structure and NbTe{sub 2}-type thin films which have a two-dimensional structure. While NbTe{sub 2} films have been ...
The formation and breakdown of the passive films on stainless steels are mainly controlled by ionic and electronic transport processes. Both these processes are in part controlled by the electronic properties of the oxide film. Consequently, it is vital to gain a detailed perception of the electronic properties of the passive films together with structural and compositional information for a comprehensive understanding of mechanisms behind passivity and localised corrosion. As a step towards this goal the passive films formed on two main austenitic stainless steels AISI 316L and AISI 304L in borate solution were characterised by in situ Raman spectroscopy and photocurrent spectroscopy coupled with electrochemical measurements. This revealed the formation of an Fe-Cr spinel as the dominant constituent in the passive films with more Cr enrichment in the oxide film ...
The formation and breakdown of the passive films on stainless steels are mainly controlled by ionic and electronic transport processes. Both these processes are in part controlled by the electronic properties of the oxide film. Consequently, it is vital to gain a detailed perception of the electronic properties of the passive films together with structural and compositional information for a comprehensive understanding of mechanisms behind passivity and localised corrosion. As a step towards this goal the passive films formed on two main austenitic stainless steels AISI 316L and AISI 304L in borate solution were characterised by in situ Raman spectroscopy and photocurrent spectroscopy coupled with electrochemical measurements. This revealed the formation of an Fe-Cr spinel as the dominant constituent in the passive films with more Cr enrichment in the oxide film ...
The electrochemical behaviour of passive films formed on one austenitic stainless steel (AISI 304) and one ferritic stainless steel (AISI 446) in solutions with pH between 0.6 and 8.4 was studied by capacitance measurements and photocurrent spectroscopy. Compositional characterization of the passive films was done by X-ray photoelectron spectroscopy. The capacitance increases with decreasing pH. Doping densities evaluated from Mott-Schottky plots are in the range 2-6 x 10{sup 20} cm{sup -3} and increased with the pH in the neutral/alkaline range while in pH 0.6, values above 10{sup 21} cm{sup -3} were found. The bandgap energy indicates two transitions, at 2.5-2.8 and 3.2 eV. The analytical data reveal that, as the pH increased, the films become enriched in Fe(II) and Fe(III), whereas the Cr(III) gradually decreases. The films formed at very low pH had a behaviour that contrasts with that of the ...
The electrochemical behaviour of passive films formed on one austenitic stainless steel (AISI 304) and one ferritic stainless steel (AISI 446) in solutions with pH between 0.6 and 8.4 was studied by capacitance measurements and photocurrent spectroscopy. Compositional characterization of the passive films was done by X-ray photoelectron spectroscopy. The capacitance increases with decreasing pH. Doping densities evaluated from Mott-Schottky plots are in the range 2-6 x 10"2"0 cm"-"3 and increased with the pH in the neutral/alkaline range while in pH 0.6, values above 10"2"1 cm"-"3 were found. The bandgap energy indicates two transitions, at 2.5-2.8 and 3.2 eV. The analytical data reveal that, as the pH increased, the films become enriched in Fe(II) and Fe(III), whereas the Cr(III) gradually decreases. The films formed at very low pH had a behaviour that contrasts with that of the ...
Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack formation. By a simultanous optimization of the other epitaxy and process parameters, the efficiency was ...
The investigated hybrid nanocomposite consists of a porous silicon template with electrochemically embedded Ni or Co nanostructures and offers magnetic characteristics which can be tailored by the electrochemical process parameters during fabrication. A twofold magnetic behaviour can be observed, a first one due to the spinmagnetism at magnetic fields below the saturation magnetization of the deposited metals and a second non-saturating term at higher fields (>1 T up to 7 T) above the saturation magnetization. In case of Ni deposited within the pores this non-saturating term shows a paramagnetic characteristic and follows exactly the Curie-Weiss law, whereas for Co/porous silicon samples the temperature dependent magnetization shows some deviations from the Curie Weiss law. In this high field region a difference in the temperature dependence between Ni and Co is observed whereas the non-saturating term does not depend on the geometry of the embedded ...
Structure and magnetic properties of the thermal decomposition products of Fe(III(Co(II) acrylate complex were analysed. The crystalline phases, which were found in the fully processed material, at 643 K, were Fe_3O_4, CoFe_2O_4 and CoO and had a mean particle size of about 30 nm. In the intermediate stages of the thermolysis iron was present in a form of Fe"I"I"I (trivalent low-spin iron), Fe"2"+ (divalent high-spin iron), and Fe_3O_4. The coercivity and remanence were measured versus temperature in the range of 5-300 K, in 1.1 T applied field. Both _MH_c and M_r, decreased showing room temperature values of 0.038 T and 7.49 mT, for coercivity and remanence, respectively. At temperatures below 200 K the hysteresis loops were asymmetrical, opened and shifted towards negative field values. (author)
This paper introduces a new method to produce nano-composite powder for the preparation of high performance ZnO varistors. ZnO particles were coated with Bi{sub 2}O{sub 3}, Sb{sub 2}O{sub 3}, Co{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} and other additives via liquid nano-coating technique. Then the prepared powder was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), thermal gravity and differential scanning calorimetry (TG-DSC) and particle size distribution. The results showed that the ZnO composite powder is homogeneously coated and ultrafine. The densification, phase composition and microstructure of ZnO varistors was studied by linear shrinkage, X-ray diffraction (XRD) and SEM, respectively. The preliminary electrical parameters of ZnO varistors showed that the breakdown voltage V {sub b} (1 mA/cm{sup 2}) and nonlinear coefficient {alpha} is 5400 V/cm and 50, respectively, much higher than that of conventional ball milling ...
In the present study, new light weight nano-composites (AZ31B-3.3Al2O3-Cu) based on magnesium alloy AZ31B are developed using disintegrated melt deposition technique. Microstructural characterization studies revealed grain refinement and significant increase in amount of second phases as a result of increasing presence of copper. All the samples exhibited minimal porosity and good matrix-second phase interfacial integrity. The results also showed that addition of both nano-Al2O3 and Cu led to a simultaneous improvement in 0.2% yield compressive strength (0.2%YCS), ultimate compressive strength (UCS) and work of fracture (WoF) of the AZ31B magnesium alloy while failure strain was marginally affected. The results of this study clearly illustrate the capability of AZ31B-Al2O3-Cu formulations ...
A novel method for the determination of metoclopramide (MCP) using electrogenerated chemiluminescence (ECL) is presented. A tris(2,2prime-bipyridyl)dichlororuthenium(II) (Ru(bpy)32+)-doped silica (RuDS) nanoparticle/perfluoinated ion-exchange resin (Nafion) with nanocomposite membrane modified glassy carbon electrode (GCE) is used. The Ru(bpy)32+ encapsulation interior of the silica nanoparticle maintains its electrochemical activities and also reduces Ru(bpy)32+ leaching from the silica matrix when immersed in water due to the electrostatic interaction. The analytical performance of this ECL sensor for MCP is shown in detail. Under optimal experimental conditions, it has good linearity in the concentration range from 2x10-8mol/L to 1x10-5mol/L (R=0.9989) with a detection limit of 7x10-9mo...
The nanocomposite WC-Co powders were prepared through planetary ball milling method. Effects of grain growth inhibitor addition and the vacuum sintering parameters on the microstructure and properties of ultrafine WC-10Co cemented carbides were investigated using X-ray diffractometer, scanning electron microscope and mechanical property tester. The results show that VC and NbC additions can refine the WC grains, decrease the volume fraction of Co3W3C phase in ultrafine WC-10Co cemented carbides, and increase the hardness and fracture toughness of the base alloys. After sintering for 60 min at 1400 degreeC, the average grain size and hardness of ultrafine-grained WC-10Co-1VC cemented carbide are 470 nm and HRA 91.5, respectively. The fracture toughness of cemented carbide WC-10Co-1NbC alloy...
We report a templated-synthetic approach based on apoferritin to prepare radionuclide nanoparticle (NP) conjugates. Non-radioactive yttrium (89Y) was used as model target and surrogate for radioyttrium (90Y) to prepare the nanoparticle conjugate. The center cavity and multiple channel structure of apoferritin offer a fast and facile method to precipitate yttrium phosphate by diffusing yttrium and phosphate ions into the cavity of apofrritin, resulting a core-shell nanocomposite. The yttrium phosphate/apoferritin nanoparticle was functionalized with biotin for further application. The synthesized nanoparticle was characterized by transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). We found that the resulting nanoparticles were uniform in size, with a diameter of around 8 nm. We tested the pre-targeting capability of the biotin-modified yttrium phosphate/apoferritin nanoparticle (yttrium phosphate/apoferritin nanoparticle) conjugate ...
If 4-day-old dark-grown zucchini squash seedlings (Cucurbita pepo L. cv. Black Beauty) are exposed briefly to red light, subsequent cell fractionation yields about 40% of the total...Full Text Available
Technetium transfer from soil to edible parts of various agricultural plants is studied with application of the "9"5"mTc radioactive tracer. The samples of agricultural plants were grown on andesol typical for Japan soil. The technetium transfer factor to edible parts of cultivated lettuce was higher as compared to non foliate cultures. Relative low transfer factor were observed for fruit and pod like plants. the transfer factors for root crops were of intermediate value
DescriptionThis cross-disciplinary project will combine chemical, ecological and modelling techniques to determine whether cabbages grown under an organic regime differ in terms of pest dynamics and plant chemistry. There is increasing pressure to de-intensify agricultural practice and organic approaches are becoming more popular and widely adopted. However, there are very few, if any, detailed scientific investigations into the claims made about improved pest control, reduced environmental impact and be [continued...
Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 ...
Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi_2 layers with the low sheet resistance value as low as congruent with 4.4 #OMEGA#/cm up to the annealing temperature as high as ...
This study investigated relationships between molecular weight distributions of unreduced grain proteins and grain, flour, and end-use quality characteristics of soft white winter wheats grown in Oregon. Absorbance area and area % values of protein fractions separated by size exclusion HPLC (SE-HPL...
Influx and accumulation of K+ in barley (Hordeum vulgare L. cv Fergus) roots were measured at two temperatures (10°C and 20°C) in plants which had been grown...Full Text Available
Plant biomass, stem juice and stem sugar were determined for four sugarcane cultivars grown for three months at daytime [CO2] of 360 (ambient) and 720 (doubled) ppm and temperatures (T) of 1.5 (near-ambient) and 6.0C higher than outside ambient T. Leaf area and biomass, stem biomass, stem juice and ...
Water hyacinth (Eichhornia crassipes [Mart.] Solms) plants were grown in environmental chambers at ambient and enriched CO2 levels (330 and 600 microliters CO2...Full Text Available
An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.
1. A cell-free system, prepared from Pseudomonas N.C.I.B. 9340 grown on 4-chloro-2-methylphenoxyacetate (MCPA) was shown to catalyse the reaction sequence: 5-chloro-3-methylcatechol...Full Text Available
sigma-Aminolevulinate dehydratase has been found to be activated in vitro by dithiotreitol and factors isolated from radish cotyledons grown under continuous far-red light. Cross experiments, between fructose 1-6 bisphosphatase system, and sigma-aminolevulinate dehydratase, show that these factors are functionally identical to thioredoxin f.
Large (about 200 grams dry weight) and small (about 5 grams dry weight) specimens of the leaf succulent Agave vilmoriniana Berger were grown outdoors at Phoenix, Arizona. Potted plants...Full Text Available
The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.
In the paper, a potential of solar energy for drying of medicinal plants in Polish conditions is estimated and development of solar drying technologies is presented. The results of economic assessment of flat-plate solar collectors applied for drying of medicinal plants on a farm are promising. In some specific conditions, e.g. drying of wild grown medicinal plants in remote areas, even application of photovoltaic modules for driving of a fan of a solar dryer is a profitable option and enables easy control of the drying air temperature.
Experiments were conducted with field-grown cotton (Gossypium hirsutum L.) in 1985 and 1986 to determine effects of water deficit on levels of conjugated indole 3-acetic...Full Text Available
Barley (Hordeum vulgare L. cv Golden Promise) plants were grown in a continuous culture system in which the root and shoot ammonia and amino acid levels were constant over a 6-hour...Full Text Available
Experiments were conducted in controlled growth chambers to evaluate how increase in CO{sub 2} concentration affected sucrose metabolizing enzymes, especially sucrose phosphate synthase (SPS; EC 2.4.1.14) and sucrose synthase (SS; EC 2.4.1.13), as well as carbon metabolism and partitioning in a tropical epiphytic orchid species (Oncidium goldiana). Response of ribulose-1,5-bisphosphate carboxylase/oxygenase (Rubisco; EC 4.1.1.39) to elevated CO{sub 2} was determined along with dry mass production, photosynthesis rate, chlorophyll content, total nitrogen and total soluble protein content. After 60 days of growth, there was a 80% and 150% increase in dry mass production in plants grown at 750 and 1100 {mu} l{sup -}1 CO{sub 2}, respectively, compared with those grown at ambient CO{sub 2} (about 370 {mu} l{sup -}1). A similar increase in photosynthesis rate was detected throughout the growth period when measured under growth CO{sub 2} conditions. ...
Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure ...
The growth of stoichiometric and non-stoichiometric silicon nitride films was studied experimentally on 100 mm silicon wafers by batch depositions from the dichlorosilane (SiH{sub 2}Cl{sub 2})-ammonia (NH{sub 3}) system in a hot-wall horizontal low pressure chemical vapor deposition (LPCVD) reactor. The growth kinetics were discussed in terms of the Langmuir adsorption isotherm. The kinetic parameters were determined by comparing the experimental data with a one-dimensional simulation model. The decomposition of NH{sub 3} at high temperatures was included in the simulation procedure. When the SiH{sub 2}Cl{sub 2}:NH{sub 3} ratios were greater than 1.5, a quantity higher than the thermodynamic critical values above which Si-rich nitride films begin to deposit, various SiN{sub x} films with x < 4/3 were obtained. The composition of the SiN{sub x} films was found to vary along the LPCVD reactor. The ...
High quality La/sub 1.8/Sr/sub 0.2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 ..mu..m thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF/sub 2/, Si, CaF/sub 2/, ZrO/sub 2/-9% Y/sub 2/O/sub 3/, BaF/sub 2/, Al/sub 2/O/sub 3/, and SrTiO/sub 3/. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa/sub 2/Cu/sub 2/O/sub 7/ ...
Nylon 6 and nylon 66 films have been treated with aqueous sulfonated aromatic compound (SAC) solutions at concentrations ranging from 0.005 to 1.0 wt%. SAC uptakes at different treatment concentrations were measured and found to follow a BET isotherm. The surface morphologies of nylon film samples, including the original and SAC-treated films, have been characterized by atomic force microscopy (AFM). For untreated nylon 6 and nylon 66 films, AFM images show a randomly distributed fibrillar surface structure. Characteristic widths of fibrils in the nylon 66 and 6 films were 150-225 and 75-150 nm, respectively. For SAC-treated nylon films, the AFM images revealed that the surfaces of the films became covered with nodule-like features having a diameter range of 25-60 nm. AFM analysis provides evidence that SAC treatment deposited a surface ...
Passivity of aluminum (Al) alloy 3003 in air and in aqueous solutions without and with chloride ions was characterized by electrochemical measurements, including cyclic polarization, electrochemical impedance spectroscopy (EIS), localized EIS and potential of zero charge, Mott-Schottky analysis and secondary ion mass spectroscopy (SIMS) technique. Stability, pitting susceptibility and repassivation ability of Al alloy 3003 under various film-forming conditions were determined. Results demonstrated that passive films formed on 3003 Al alloy in air and in Na2SO4 solution without and with NaCl addition show an n-type semiconductor in nature. The passive film formed in chloride-free solution is most stable, and that formed in chloride-containing solution is most unstable, with the film formed in air in between. Pitting of Al alloy 3003 passivated both in air and in aqueous solutions is inevitable in the ...
Film boiling is the mode if boiling during which the hot surface is separated from the vaporizing liquid by a nearly continuous film vapor. Film boiling is usually considered a very undesirable boiling regime since it is a relatively quiet and inefficient mode of heat transfer, particularly as compared to nucleate boiling. It is customary to analyze the two-phase flow regime of laminar flow film boiling by assuming the two-phase flow regime of laminar flow film boiling by assuming an idealized vapor film flow characterized by a smooth liquid-vapor interface. However, during stable flow film boiling, the wavy nature of the liquid-vapor interface and its role in local heat and mass transport have been largely ignored. The vapor interface is rarely stationary. Interfacial waves may substantially augment the heat transfer rates throughout the ...
The emittance of aluminum components exposed to low-temperature aqueous solutions were required for thermal analysis of a Loss of Cooling Accident for the Savannah River Site production reactors. Experimental data for the thickness and emittance of oxide films formed under these conditions were collected and reviewed. Correlations were developed for the oxide film thickness and corresponding total hemispherical emittance. Film thickness and emittance were also measured for the specific conditions of interest in order to verify the predictions based on the literature data. After one year of exposure in 30deg C reactor moderator, the aluminum oxide film thickness is predicted to be 6.4 [mu]m[+-]10%; this value is relatively insensitive to exposure time. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental ...
The emittance of aluminum components exposed to low-temperature aqueous solutions were required for thermal analysis of a Loss of Cooling Accident for the Savannah River Site production reactors. Experimental data for the thickness and emittance of oxide films formed under these conditions were collected and reviewed. Correlations were developed for the oxide film thickness and corresponding total hemispherical emittance. Film thickness and emittance were also measured for the specific conditions of interest in order to verify the predictions based on the literature data. After one year of exposure in 30deg C reactor moderator, the aluminum oxide film thickness is predicted to be 6.4 #mu#m#+-#10%; this value is relatively insensitive to exposure time. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental ...
The crystallite size and orientation in molybdenum films prepared by magnetron sputtering at a low rate of typical 1 (angstrom)s and a pressure of 0.45 Pa was investigated by X-ray diffraction and texture analysis. The surface topography was studied using atomic force microscopy. Increasing the film thickness from 20 nm to 3 microm, the films show a turnover from a (110) fiber texture to a (211) mosaic-like texture. In the early state of growth (20 nm thickness) the development of dome-like structures on the surface is observed. The number of these structures increases with film thickness, whereas their size is weakly influenced. The effect of texture turnover is reduced by increasing the deposition rate by a factor of six, and it is absent for samples mounted above the center of the magnetron source. The effect of texture turnover is related to the bombardment of the films with ...
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO{sub 2}-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also ...
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO_2-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also ...
The effect of temperature (60-280{sup o}C) on the properties of the oxide films formed on Alloy 800 in 0.1 M NaCl and 0.1 M Na{sub 2}SO{sub 4} aqueous solutions was studied by in situ AC impedance spectroscopy and polarization in the Fe(CN{sub 6}){sup -3}/Fe(CN){sub 6}{sup -4} redox system. The anodic behavior under the same experimental conditions was examined by potentiodynamic polarization techniques. In both solutions the passive film was found to become more porous, and hence less protective, with increasing temperature. However, at temperatures above 150{sup o}C, the loss of film protectiveness is more pronounced in chloride solutions, in which pitting occurs. Pitting morphology was found to be strongly temperature dependent: isolated and deep pits were found up to 200{sup o}C whereas at higher temperatures a broad, shallow and more generalized type of attack was detected. No effect of temperature on the defect ...
In this study, the effects of 325nm wavelength ultraviolet light irradiation on pitting corrosion behavior of type 340 stainless steel in a neutral chloride solution are studied. Further, the change of passive film with the light irradiation is analyzed using x-ray photoelectron spectroscopy. The mains results obtained therefrom are stated below. Pitting potential can be shifted in noble direction by the ultraviolet light irradiation. The effect of ultraviolet light irradiation is ore prominent in the pitting corrosion process than that in the passive film formation. The result of the analysis in terms of the birth and death stochastic probability process shows that pitting corrosion rate is decreased remarkably by the ultraviolet light irradiation at the formation of passive film, while the repassivation is slightly expedited by the ultraviolet light irradiation. On the other hand, the repassivation rate is increased a ...
Electrodeposition of semiconducting iron oxide (Fe_2O_3) thin film was carried out from an alkaline sulphate bath. A 0.1 M ferrous sulphate (FeSO_4#centre dot#7H_2O) was complexed with 0.1 M citric acid. By addition of 1 N NaOH, pH of the solution was made alkaline (pH=9) and deposition of iron oxide (Fe_2O_3) thin films was carried out potentiostatically at room temperature (300 K). From cyclic voltametry (CV), electrochemical studies were carried out for deposition of iron oxide thin films. The XRD studies reveal that Fe_2O_3 with epsilon (#epsilon#) phase having monoclinic crystal structure is formed. By observing scanning electron microscope (SEM), it is seen that iron oxide films were homogeneous, uniform and well covered to surface of the substrate. Grain size was found to be in nanometers range from XRD analysis. The optical band gap of Fe_2O_3 thin film was estimated to be ...
Sputter-deposited tantalum (Ta) and reactively sputter-deposited Ta-nitride films were studied with respect to the passivation capability against copper (Cu) oxidation in thermal O{sub 2} ambient. A 200 {angstrom} Ta or Ta-nitride film was sputter-deposited on a 2,000 {angstrom} Cu film using a Ta target in an Ar/N{sub 2} gas mixture. With Ta passivation, Cu was not oxidized at temperatures up to 400 C, which can be further improved by using passivation of an amorphous Ta-nitride film deposited in an appropriate condition. The absence of long-range defects in the Ta-nitride film was presumably responsible for this improvement. However, sputtering-induced surface damage by excess N{sub 2} in the sputter gas mixture may reduce the passivation capability of Ta-nitride films. When the passivated Cu was oxidized, the Cu oxides always resided in the top surface ...
In 1977 and 1978, Sandia National Laboratories, located in Albuquerque, New Mexico, and operated for the US Department of Energy (DOE), filmed a series of crash and fire tests performed on three casks designed to transport irradiated nuclear fuel assemblies. While the tests were performed to assess the applicability of scale and computer modeling techniques to actual accidents, films of them were quickly pressed into service by the DOE and nuclear utilities as proof'' to the public of the safety of the casks. In the public debate over the safety of irradiated nuclear fuel transportation, the films have served as the mainstay for the nuclear industry. Although the scripts of all the films were reviewed by USDOE officials before production, they contain numerous misleading concepts and images, and omit significant facts. The shorter versions eliminated qualifying statements contained in ...
Nanocrystalline ZnO films were fabricated via a simple method involving the oxidation of Zn films at a remarkably low temperature of 380 C. X-ray diffraction study confirmed that the Zn films were completely oxidized even at the low temperature of 380 C and the ZnO films fabricated were of polycrystalline wurtzite structure. Room temperature optical pumping using a frequency-quintupled Q-switched Nd:YAG laser ({lambda}=213 nm) exhibited that sharp peaks at around 3.12 eV emerged above excitation powers of {proportional_to}7 MW/cm{sup 2}, demonstrating lasing in the ZnO films. These results represent that the process is a simple, promising approach for fabricating ZnO of sufficient optical performance for use as ultraviolet (UV) light emitters and an alternative UV laser source; both are key components in short-wavelength photonic devices. (orig.)
The temperature effect on corrosion behaviors of PbCaSnCe alloy in 4.5 M H{sub 2}SO{sub 4} solution was investigated by using potentiodynamic curve, electrochemical impedance spectra (EIS), Mott-Schottky plot and photocurrent response methods. It was found that PbCaSnCe alloy was in passive state in sulfuric acid solution, a passive film can be formed on alloy surface. The compositions of passive films formed at 0.9 V for 2 h under different temperatures were detected by X-ray photoelectron spectroscopy (XPS). The results showed that the film resistance and the transfer resistance decreased with the increment of the solution temperature. Mott-Schottky analysis and the photocurrent response revealed that the passive film exhibited n-type semi-conductive character, the donor density of the passive film decreased with increasing the solution temperature. Photocurrent response revealed ...
Electronic properties of passive films formed on Fe at various applied potentials in pH 8.5 buffer solution were examined through the photocurrent measurement and impedance spectroscopy. Passive film formed on Fe at relatively low potentials was found to be r-FeOOH layer and internal r-Fe{sub 2}O{sub 3} layer. However, the r-FeOOH layer became unstable and disappeared at potentials below 400mV and hence may be an adsorbed layer. An electronic band structure model for the passive film of Fe was suggested on the basis of the spinel band model with involving two types of electronic excitation processes, i. e., the p-d and the d-d transition together. The effects of applied potential on the photocurrent behaviors of the passive film on Fe were explained appropriately by separating the photocurrent spectra depending on the transition type. The Mott-Schottky behavior for the passive film ...
In the region of annular liquid film-mist flow, the behavior of the droplets formed from the liquid film and the rate of formation are the subjects to be clarified in connection with the forecast of dry-out point, which becomes a problem in the region of high dryness such as reactor cooling system and steam generators. Many researches have been performed on such problem in vertical tubes, but the characteristics in horizontal flow have not yet been sufficiently clarified. This series of research is to clarify various characteristics, such as the velocity of vapor phase, the flow rate distribution of droplets, the formation and adhesion of droplets and the structure of liquid film, in the region of liquid film-mist flow, where liquid film exists on the bottom of a horizontal rectangular channel, and vapor flow is accompanied by droplets. In this study, by the measurement of the flow ...
In the region of annular liquid film-mist flow, the behavior of the droplets formed from the liquid film and the rate of formation are the subjects to be clarified in connection with the forecast of dry-out point, which becomes a problem in the region of high dryness such as reactor cooling system and steam generators. Many researches have been performed on such problem in vertical tubes, but the characteristics in horizontal flow have not yet been sufficiently clarified. This series of research is to clarify various characteristics, such as the velocity of vapor phase, the flow rate distribution of droplets, the formation and adhesion of droplets and the structure of liquid film, in the region of liquid film-mist flow, where liquid film exists on the bottom of a horizontal rectangular channel, and vapor flow is accompanied by droplets. In this study, by the measurement of the flow ...
Langmuir-Blodgett films have been made with 3-n-hexadecylpyrrole and 3-n-octadecylpyrrole monomers and copolymers with unsubstituted pyrrole made by chemical polymerization at the air-water interface on a subphase containing FeCl/sub 3/. Langmuir-Blodgett films consisting of mixtures of stearic acid and alkylsubstituted polythiophenes have also been made as bilayer films. The orientation of single and multilayer films on platinum substrates have been studied by Near Edge X-ray Absorption Fine Structure Spectroscopy which also gives information about charge transfer interactions between the aromatic groups and the metallic substrates. The alkylsubstituted pyrroles form highly ordered two-dimensional structures. FeCl/sub 3/ initiated copolymerization with unsubstituted pyrrole leads to a more disordered system. In the case of polythiophene-stearic acid bilayers, the stearic acid layers are highly ordered. ...
Since April, 1985, we have, in co-operation with the Fuji Film Co., Ltd., used Fuji Computed Radiography (FCR) in the diagnosis of spinal disorders. FCR is a new computed radiographic system which uses an energy-storage phosphorus panel called an ''Imaging Plate'' as an image sensor. The ''Imaging Plate'' can be used to obtain radiographs in exactly the same way as the screen-film combination used in conventional radiography; X-rays are exposed on the ''Imaging Plate'' instead of X-ray film in the conventional fashion, and then the ''Imaging Plate'' is calculated. The processed digital data from the scans is transformed into a picture by means of digital-to-analogue conversion. The pictures are always clear and beautiful. Plain films of the spine taken by FCR are even clearer, even in the cervicothoracic region, where it is usually difficult to obtain clear cervicothoracic films in ...
Type 440C stainless steel is a high-C, high-Cr martensitic steel used in applications requiring high hardness and wear resistance in combination with moderate corrosion resistance. Typical applications include precision aerospace bearings and critical components in computer disk drives. The properties of passive films formed on 440C steel were investigated using advanced electrochemical techniques with a view to establishing a method to measure film stability directly in the passivation baths. Electrochemical measurements were sensitive to the passive film properties and were able to quantify the effect of cooling rate on passive film stability. The techniques used included linear polarization, AC impedance, small amplitude cyclic voltammetry, and coulostatic transient measurements. These provided results that exhibited excellent agreement with the AC impedance technique providing the most information ...
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress ...
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to ...
In this work, the effects of substrate temperature that was changed from 100 to 500 "oC on the structural, chemical and electrical properties of carbon films, prepared by direct current magnetron sputtering technique, on 316L stainless steel as bipolar plate had been investigated. Raman spectroscopy and scanning electron microscopy (SEM) were performed to study the structure and the morphology of the deposited films, respectively. The corrosion resistance and the electrical resistivity were carried out by using corrosion tests and four point-probe technique. The results show that the carbon films change the structure from amorphous to graphite-like by increasing temperatures. At the temperatures higher than 300 "oC, the holes and porosities are formed on the film indicating a decrease of film quality. According to our results, corrosion resistance and electrical properties are ...
Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm{sup -3} HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films highly enriched in chromium. Chloride ions are ...
Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm-3 HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films highly enriched in chromium. Chloride ions are ...
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle texture, while the impurity concentration and resisitivity are minimum. The correlation between the ...
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between ...
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between ...
Objective: To evaluate the quality and usefulness of direct digital radiography system in roentgenogram of chest in clinical practice. Methods: 1000 cases of chest roentgenograms with digital radiography and high kV conventional radiography were selected for analysis by 3 senior radiologists. Results: 1. With digital radiography system, the quality of chest film was assessed as grade A in 50.6%, grade B in 38.5%, grade C in 10.9%, and no waste film. 2. With conventional high kV radiography, the quality of chest film was assessed as grade A in 41.1%, grade B in 44.1%, grade C in 13.3%, and waste film in 1.5%. The direct digital radiography was statistically superior to the conventional high kV radiography. 3. The fine structure of the lungs could be revealed in 100.0% of chest roentgenogram with direct digital radiograph system, which was significantly higher than that acquired with the conventional high ...
A new magnetic macroparticle filter design consisting of two 90{sup o} filters forming an S-shape is described. Transport properties of this S-filter are investigated using Langmuir and deposition probes. It is shown that filter efficiency is product of the efficiencies of two 90{sup o} filters and the deposition rate is still acceptably high to perform thin film deposition. Films of amorphous hard carbon have been deposited using a 90{sup o} filter and the S-filter, and macroparticle content of the films are compared.
Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)
Thin films of La{sub 0.6}Ca{sub 0.4}CoO{sub 3} perovskite were deposited on nickel plates by thermal decomposition of the metal nitrates. The electrochemical activity of the films for oxygen evolution in KOH solutions (0.1-1 M) was investigated. The reaction order with respect to OH{sup -} ion was found to be around 0.7. The results correlate fairly well with a mechanism in which breaking of the intermediate metal-peroxide bond at the Co ion is the rate-determining step. (author) 4 figs., 4 refs.
Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.
The magnetization of ultrathin bcc Fe films (two and three monolayers) on MgO was measured and compared with the behavior predicted for a two-dimensional ferromagnet. The experiment indicated that no hysteresis was present in the magnetization. Instead, the magnetization at low temperature was affected by a marked field cooling effect. These observations lead to the conclusion that films of Fe on MgO of such thickness exhibit superparamagnetic behavior as if they were not entirely continuous. In contrast, films thicker than five monolayers exhibit a magnetic response close to that of bulk iron.
The effects of {alpha} particle irradiation on a passive film formed on a 304 type stainless steel are studied in situ. The experimental arrangement minimizes the radiolysis effects due to the electrolyte. Under irradiation, a modification of the electronic structure of the oxide layers is revealed by photo-electrochemistry and impedance measurements. The influence of irradiation on the corrosion resistance of the passive film is investigated. Comparing the rest potential and the breakdown potential respectively under and without irradiation, a drop in the passivity range under irradiation is shown. this is interpreted as a decrease in the corrosion resistance. (author).
The effects of #alpha# particle irradiation on a passive film formed on a 304 type stainless steel are studied in situ. The experimental arrangement minimizes the radiolysis effects due to the electrolyte. Under irradiation, a modification of the electronic structure of the oxide layers is revealed by photo-electrochemistry and impedance measurements. The influence of irradiation on the corrosion resistance of the passive film is investigated. Comparing the rest potential and the breakdown potential respectively under and without irradiation, a drop in the passivity range under irradiation is shown. this is interpreted as a decrease in the corrosion resistance. (author).
The capability of screen-film combinations of detection and representation of information is described by the detective quantum efficiency (DQE). The DQE may be calculated from the sensitivity, the gradient of the characteristic curve, the modulation transfer function and the Wiener spectrum. These parameters have been determined for fourteen screen-film combinations and the DQE's have been calculated. It is shown that the low frequency region the DQE does not depend on spatial frequency. This constant level of DQE is mostly dependent on the absorbance of the screens. Consequences from this fact, as well for the manufacturer as for the user of the screens, are discussed.
The capability of screen-film combinations of detection and representation of information is described by the detective quantum efficiency (DQE). The DQE may be calculated from the sensitivity, the gradient of the characteristic curve, the modulation transfer function and the Wiener spectrum. These parameters have been determined for fourteen screen-film combinations and the DQE's have been calculated. It is shown that the low frequency region the DQE does not depend on spatial frequency. This constant level of DQE is mostly dependent on the absorbance of the screens. Consequences from this fact, as well for the manufacturer as for the user of the screens, are discussed. (orig.).
Carbon nano tubes are easily produced in macroscopic quantities, however their characterisation and possible applications are still rather limited. We have developed a new method to make aligned nano tube films which open new opportunities, not only for basic research but also for eventual applications. With this method the tubes can be aligned either parallel or perpendicular to the surface. We give a short review of the microscopic properties of single tubes and the bulk properties of the aligned films. (author). 24 refs., 6 figs.
Experiments were conducted which established that the higher passivating capacity of Ni/sub 60/Nb/sub 40/ alloys in the amorphous state and higher efficiency of the anodic process of generation of chlorine (2 N NaCl + HCl to pH = 0) in comparison with the crystalline state are determined by higher homogeneity and density of the passive films formed on the amorphous alloy and by higher electron conduction which depends directly on the difference in the structure of the passive films formed on the alloys in the amorphous and crystalline states.
Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).
This report reviews the published literature on the anaerobic oxidation of iron in aqueous solutions which are of particular relevance to Swedish granitic groundwaters. The thermodynamics of iron corrosion in water are briefly considered. Following this the experimental data found in the literature are presented and discussed. Results were found for corrosion of iron in both pure water and solutions containing mineral salts. The literature work in the nature of the films formed on iron surfaces under anaerobic conditions is reviewed and the possible mechanisms of film formation are discussed. Conclusions are drawn on the factors most likely to influence and control film growth. 32 refs.
A highly sensitive and stable tris(2,2prime-bipyridyl)ruthenium(II) (Ru(bpy)32+) electrogenerated chemiluminescence (ECL) sensor was developed based on carbon nanotube (CNT) dispersed in mesoporous composite films of sol-gel titania and perfluorosulfonated ionomer (Nafion). Single-wall (SWCNT) and multi-wall carbon nanotubes (MWCNT) can be easily dispersed in the titania-Nafion composite solution. The hydrophobic CNT in the titania-Nafion composite films coated on a glassy carbon electrode certainly increased the amount of Ru(bpy)32+ immobilized in the ECL sensor by adsorption of Ru(bpy)32+ onto CNT surface, the electrocatalytic activity towards the oxidation of hydrophobic analytes, and the electronic conductivity of the composite films. Therefore, the present ECL sensor based on the CNT-...
... Second, in drag as a member of the all-girl band which provides his camouflage. And last as a fake oil millionaire - out to seduce Marilyn - played as a wonderful homage to Cary Grant. \\
Purpose - This paper aims to discuss the procedures and methods developed at Washington State University to digitize and make accessible historic moving images. Design/methodology/approach - The paper describes the selection and the use of low-cost technologies to transfer analog film to digital formats. Issues related to the conversion, description, and online hosting of digital films are also addressed. Findings - Though the steps involved in digitizing film are not trivial, the benefits of access both for the public and archives staff outweigh the expense and labor involved. The procedures described in this paper involve low upfront costs and are sustained through cost recovery fees. Research limitations/implications - The focus of this paper is on managing, describing, and providing on...
The kinetics of the electropolymerization of 3-amino-1,2,4-triazole on a brass substrate in alkaline solution containing methanol was investigated using cyclic polarization, chronoamperometry, electrochemical impedance techniques and scanning electronic microscopy. The polymeric film was prepared by successive cycles of potential of a 60Cu-Zn electrode between 0 and 1.6 V. During the second cycle, the oxidation peak of the monomer disappears indicating the formation of the insulating film. We have also shown that the monomer oxidation reaction is essentially irreversible and controlled by a diffusion process. The protective effect of the film formed on brass has been studied in a 3%NaCl and 3%NaCl + S{sup 2-} solution. The results showed important inhibition efficiency, about 96% for 4 h of testing time.
The kinetics of the electropolymerization of 3-amino-1,2,4-triazole on a brass substrate in alkaline solution containing methanol was investigated using cyclic polarization, chronoamperometry, electrochemical impedance techniques and scanning electronic microscopy. The polymeric film was prepared by successive cycles of potential of a 60Cu-Zn electrode between 0 and 1.6V. During the second cycle, the oxidation peak of the monomer disappears indicating the formation of the insulating film. We have also shown that the monomer oxidation reaction is essentially irreversible and controlled by a diffusion process. The protective effect of the film formed on brass has been studied in a 3%NaCl and 3%NaCl+S2- solution. The results showed important inhibition efficiency, about 96% for 4h of testing ...
Most surface-acoustic-wave and thin-film optical devices are made by the planar fabrication process. The exposure of the pattern in the polymer film is the first and most crucial step in ensuring desired device geometry, dimensional control, and freedom from pattern distortion. The methods of exposing the polymer film include: optical projection, conventional contact printing, conformable photomask contact printing, holographic recording, scanning electron beam lithography, projection electron lithography, and x-ray lithography. In this paper scanning electron beam lithography, conformable photomask contact printing, holographic recording, and x-ray lithography are discussed. In the last section, ion beam etching of relief structures is discussed.