nano-crystalline silicon topical: Topics by WorldWideScience.org

Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

1993-05-01

3

The adiabatic engine:Global developments

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; ...

1997-07-01

4

Neutron scattering studies in the actinide region. Progress report, August 1, 1992--July 31, 1993

This book presents papers on internal combustion engines. Topics considered include the influence of partial suppression of heat rejection on performance and emissions, duothermic combustion, turbochargers made of sintered silicon nitrides, heat flux, low heat rejection engines, exhaust energy recovery, combustion chamber insulation, computerized simulation, heat transfer, friction, hoop stress effects, and bonding ceramics and metals.

1986-01-01

5

Corrosion resistant coatings for silicon carbide heat exchanger tubes: Topical report

This report discusses the following topics: Prompt fission neutron energy spectra for {sup 235}U and {sup 239}Pu; Two-parameter measurement of nuclear lifetimes; ``Black`` neutron detector; Data reduction techniques for neutron scattering experiments; Inelastic neutron scattering studies in {sup 197}Au; Elastic and inelastic scattering studies in {sup 239}Pu; and neutron induced defects in silicon dioxide MOS structures.

1993-09-01

6

Silicon front-end technology -- Materials processing and modeling. Materials Research Society symposium proceedings Volume 532

This heat exchanger is a critical step in the development of the Externally Fired Combined Cycle power system, a direct-coal combustion power plant (gas turbine). SiC is the only material with the needed resistance to creep, thermal shock, and oxidation; however a protective coating is needed. Ten candidate materials were identified: alumina-based materials, materials stable with SiO, and low expansion materials. An initial screening study should be performed.

1996-09-01

7

Plasma immersion ion implantation. (Latest citations from the EI Compendex*plus database). Published Search

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient ...

1998-07-01

8

15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

1998-01-01

9

Limitations of silicon devices for quantum computing

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop ...

2005-11-01

10

Energetic ion beams in semiconductor processing: Summary of a DOE panel study

There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

2004-04-28

11

Synthesis of Ln_0_._6Sr_0_._4Co_0_._8Fe_0_._2O_3_-_#delta# powders through glycine-nitrate combustion process

The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.

1995-12-31

12

Silicon solar cell assembly

Solid oxide fuel cell (SOFC) is a promising source of power generation in terms of conversion efficiency which is higher than the conventional one, as it is not limited by the Carnot efficiency. Theoretically, the SOFC have an efficiency of the order of 60-80 % but it is limited by the number of active side available for the reaction i.e. TPB (triple phase boundary) at the electrode-electrolyte interface which depends on the particle size of the materials employed during the fabrication of SOFC components (i.e. the method employed during the synthesis). Literally, there are several methods used in the syntheses of oxide materials such as conventional solid-state reaction, co-precipitation, hydrothermal rout, sol-gel and Glycine nitrate process (GNP) but among these GNP found to be effective over the other because of homogeneity, phase purity and smaller particle size of final product. In this work, the Nano-crystalline Ln_0_._6Sr_0_._4Co_0_._8Fe_0_._2O_3_-_#delta# ...

2010-12-01

13

Textured silicon nitride: processing and anisotropic properties

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

1979-01-01

14

International Science & Technology Center (ISTC)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the ...

2008-07-01

15

Low-Cost Crystal Silicon

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

16

The Silicone Conundrum Part II: ?Low Outgassing? Silicones

British Library Electronic Table of Contents (United Kingdom)

Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.

2011-01-01

17

Silicon electrochemistry related to the formation of porous silicon

Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscattering

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

1988-01-01

18

Self-organization of nickel atoms in silicon

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

19

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

2011-01-01

20

Therapeutic effects of topical application of ozone on acute cutaneous wound healing.

KoreaScience (Korea)

Full Text Available

2009-06-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

21

Multi Canister Overpack (MCO) Topical Report [SEC 1 and 2

No abstract prepared.

1999-12-16

22

Silicon MOS inductor

Selective radiochemical separation for indium determination at ppb levels in ion-implanted semiconductor-grade silicon

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

1981-01-01

23

Mesoporous Silicon-Based Anodes for High Capacity, High - NASA

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

1982-12-23

24

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...

25

Deep donor states of muonium in silicon and germanium (status report exp SC81)

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

1993-01-01

26

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

Deep donor states of muonium in silicon and germanium (status report exp SC81)

1979-01-01

27

Pitting corrosion resistance of silicon-implanted stainless steels

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

1991-01-01

28

Optical, Mechanical and Tribological Properties of Boronnitride Dispersed Silicon Nitride Ceramics

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

29

KoreaScience (Korea)

Full Text Available

2010-08-01

30

On the effects of boron and phosphorus primary impurities in p-type silicon material for solar cells

Method of studying the SIALON wetting with oxides of silicon, aluminium, calcium and titanium

Not Available

1979-01-01

31

Influence of germanium and oxygen impurities on the radiation hardening of monocrystalline silicon

Short communication.

1993-10-04

32

Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors

... defects doped materials germanium infrared radiation monocrystals neutron

33

Fouling Study of Silicon Oxide Pores Exposed to Tap Water

No abstract prepared.

2006-07-01

34

Diagnostic Analysis of Silicon Photovoltaic Modules after 20--Year Field Exposure

We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

2007-07-12

35

Computer simulation of charging the silicon dioxide surface and subsurface layers by electron bombardment

No abstract prepared.

2000-09-25

36

Boron profiles in amorphous and crystalline silicon

Not Available

2011-08-01

37

BONDING SELF-ASSEMBLED, COMPACT ORGANOPHOSPHONATE MONOLAYERS TO THE NATIVE OXIDE SURFACE OF SILICON

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

1989-01-01

38

Advanced Ceramic Technology

No abstract prepared.

2003-01-01

39

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

2007-02-01

40

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

2007-10-15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

41

Infrared spectroscopy analysis of MgO-doped silicon nitride

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

2007-10-01

42

Student Understanding of the First and Second Laws of Thermodynamics

Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.

1997-12-31

43

This presentation from the 2006 PTEC Conference presents education research on topics in thermodynamics. Student responses to conceptual thermodynamics questions, and the conceptions they reveal, are presented. Tutorial materials developed to help students gain a better understanding of the topic are also presented.

2006-09-30

44

Prostheses

Comparison of knowledge scores of medical students in problem-based learning and traditional curriculum on public health topics

... Previous Topic Pain Next Topic Scars and wounds Prostheses Prostheses (pross-THEE-sees) are man-made substitutes ... covered by medical insurance (this includes wigs). Breast prostheses: Contact your local chapter of the American Cancer ...

45

Study of porous silicon morphologies for electron transport

BackgroundThe purpose of the study was to compare the knowledge scores of medical students in Problem-based Learning and traditional curriculum on public health topics.Full Text Available

46

Selective emitter using porous silicon for crystalline silicon solar cells

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

1993-05-17

47

The Analytic Methods of Operations Research

This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...

2009-06-15

48

Sunflower power system test report topical report, nov. - 19 dec. 1962

... of the utility of the terminal outcomes, ... Other stochastic topics, such as random walks, branching ... find special uses, particularly in queueing theory ...

1977-01-01

49

Sunflower power conversion system development test program

1964-01-01

50

Nuclear astrophysics

Geometric and topological methods for quantum field theory

Four topics in nuclear astrophysics, namely; pulsars, star evolution, nucleosynthesis and solar neutrinos are reviewed through the discussion of the observational data.

1982-09-01

51

An introduction to recent developments in several active topics at the interface between algebra, geometry, topology and quantum field theory

2010-01-01

52

Bacterial conjunctivitis

A Technology Foundation for Policy Based Networking with an Emphasis on Enterprise Cyber Security; TOPICAL

Clinical questionWhat is the best treatment for bacterial conjunctivitis?ResultsTopical antibiotics expedite recovery from bacterial conjunctivitis....Full Text Available

2010-01-01

53

25th Space Simulation Conference. Environmental Testing: The Earth-Space Connection

... Labs., Albuquerque, NM (US) GENERAL AND MISCELLANEOUS data

54

Organisation and training of coke oven management

Topics covered include: Methods of Helium Injection and Removal for Heat Transfer Augmentation; The

2008-01-01

55

Chromatic quasisymmetric functions and Hessenberg varieties

Japan`s coke industry was developed as the basic part for iron and steel industry. The paper addresses two factors as a characteristic of Japan-unique management. One topic is operation management and equipment management of coke factory; the second topic is human resource training in a company that lies under each management. The concepts and actual methods of these topics are introduced by showing examples. The paper discusses the improvement of the working environment and measures for future employment caused by the aging problem in Japan. 5 figs.

1994-12-31

56

Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate

We discuss three distinct topics of independent interest; one in enumerative combinatorics, one in symmetric function theory, and one in algebraic geometry. The topic in enumerative combinatorics concerns a q-analog of a generalization of the Eulerian polynomials, the one in symmetric function theory deals with a refinement of the chromatic symmetric functions of Stanley, and the one in algebraic geometry deals with Tymoczko's representation of the symmetric group on the cohomology of the regular semisimple Hessenberg variety of type A. Our purpose is to explore some remarkable connections between these topics.

2011-01-01

57

Application of neutron transmutation doping method to initially p-type silicon material

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

2008-05-19

58

Application of neutron transmutation doping method to initially p-type silicon material

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...

2009-07-15

59

Annealing of silicon implanted with arsine and hydrogen ions

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

2008-05-12

60

Analysis of the Semileptonic Decay D0 --> anti-K0 pi- mu+ nu

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

2003-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

61

Wire chamber degradation at the Argonne ZGS

This thesis describes the analysis of the semileptonic decay D{sup 0} {yields} {bar K}{sup 0} {pi}{sup -} {mu}{sup +}{nu} using FOCUS data. FOCUS is a fixed target experiment at Fermilab that studies the physics of the charm quark. Particles containing charm are produced by photon-gluon fusion from the collision of a photon beam on a BeO target. The experiment is characterized by excellent vertex resolution and particle identification. The spectrometer consists of three systems for track reconstruction (two silicon systems and one multiwire proportional chamber system) and two magnets of opposite polarity. The polarity of the magnet is such that the events of e{sup +}e{sup -} pairs produced in the target (which constitutes the main background) travel through a central opening in the detectors without interactions. Particle momentum is measured from the deflection angle in the magnets. Three multicell Cerenkov counters are used for charged particle identification ...

2004-11-01

62

Wire chamber degradation at the Argonne ZGS

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

1986-01-16

63

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

1986-01-01

64

CERN Multimedia

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

1999-01-01

65

Single Molecule Source Reagents for CVD of Beta Silicon Carbide.

Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

1991-01-01

66

Untitled - NASA Technical Report Server (NTRS)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

2008-01-01

67

Three-dimensional damage distributions in ion-irradiated silicon and pyrolytic graphite as revealed by modified tomography in combination with RBS and NDP

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

68

The crystalline-silicon photovoltaic R&D project at NREL and SNL

Short communication.

1995-12-31

69

Strained silicon for quantum computing

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

1996-12-31

70

Mechanical Properties of Microelectronics Thin Films: Silicon ...

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

2002-03-07

71

Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

1989-10-01

72

Efficiency of silicon and GaAs concentrator solar cells operated inside integrating cavity receivers

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

2006-03-27

73

CMS Silicon Strip Tracker Performance

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

1991-06-01

74

Abstracts by Mission Directorate - NASA

In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

2011-01-01

75

ANALYSIS OF BENDING CREEP BEHAVIOR OF SILICON ...

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

76

A Two-Step Etching Method to Fabricate Nanopores in Silicon

... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...

77

7 - NASA Technical Reports Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

2008-01-01

78

Silicon effect on corrosion resistance of austenite stainless steels in strongly oxidizing media containing fluoride and phosphate admixtures

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

79

Nonformity of the electron density in amorphous silicon films

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

80

Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

1985-12-01

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81

Method of mitigating titanium impurities effects in p-type silicon material for solar cells

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

82

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

1980-05-01

83

Joined ceramic product

Electrochemical stability of silicon/carbon composite anode for lithium ion batteries

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

2001-01-01

84

Dielectric barrier discharge using corona-modified silicone rubber

Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.

2007-04-20

85

The CDF intermediate silicon layers detector

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

2008-10-01

86

Supercritical Fluid Immersion Deposition: A New Process for Selective Deposition of Metal Films on Silicon Substrates

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

1999-11-01

87

Is cold better ? - exploring the feasibility of liquid-helium-cooled optics.

Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

2005-01-01

88

Application of neutron transmutation doping method to initially p-type silicon material

Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

1999-09-30

89

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

2009-01-01

90

Depth profiling using C{sub 60} {sup +} SIMS-Deposition and topography development during bombardment of silicon

[SIAM conference on optimization

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

2006-07-30

91

Washington: a guide to geothermal energy development

Abstracts are presented of 63 papers on the following topics: large-scale optimization, interior-point methods, algorithms for optimization, problems in control, network optimization methods, and parallel algorithms for optimization problems.

1992-05-10

92

The DHS Directorate of Science and Technology: Key Issues ...

Washington's geothermal potential is discussed. The following topics are covered: exploration, drilling, utilization, legal and institutional setting, and economic factors of direct use projects. (MHR)

1980-06-01

93

TOPIC O4 Navigation - NASA's SBIR & STTR Programs

... On specific R&D topics, coordination sometimes takes place through the multiagency Technical Support Working Group (TSWG), overseen by the ...

2009-06-22

94

TOPIC 02 High Speed Travel - NASA's SBIR & STTR Programs

Applications of cutting-edge estimation techniques, such as, but not limited to, sigma-point and particle filters, to spaceflight navigation problems. ...

95

TIGER in Antarctica - Q&A - Misc. Antarctic Topics - NASA

Low-cost fabrication of PMC composite sandwich panels, including metallic surface preparations for bonding the PMC to titanium honeycomb. ...

96

Sunflower i condenser-subcooler topical re- port, jun. 1960 - aug. 1962

Jan 5, 2004 ... Even if dinosaurs were cold-blooded, in the Mesozoic Era (when dinosaurs roamed the Earth), Antarctica was warm enough to have them. ...

97

Status of reactor physics in Japan

Fluid dynamic design criteria for mercury condenser-subcooler component for sunflower power conversion system

1964-01-01

98

Staging procedures in mycosis fungoides.

Recent achievements and tendency on reactor physics activities in Japan are reviewed according to topics published in journals or discussed at the Japan Research Committee on Reactor Physics.

1988-09-18

99

Solid Waste & Financial Assistance Program

Mycosis fungoides (MF) in deep-seated lymph nodes, spleen or liver appears to be associated with a lack of response of the disease to topical external therapy. Fourteen patients with mycosis fungoides...Full Text Available

1975-03-01

100

Savannah River Laboratory monthly report, November 1991

This program deals with solid waste disposal with topics/services covering: Reusable Building Materials and Large Household Items Exchange, Beneficial Use Determination, Biosolids, Certification, Compost Facil...

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101

Savannah River Laboratory monthly report, November 1991

This document details monthly activities at the Savannah River Laboratory. Topics addressed are reactor operation; tritium facilities and production; separation operations; environmental concerns; and waste management. (FI)

1991-01-01

102

Retirement Plng Wrkshp FERS

This document details monthly activities at the Savannah River Laboratory. Topics addressed are reactor operation; tritium facilities and production; separation operations; environmental concerns; and waste management. (FI)

1991-12-31

103

Processing of Titanium Alloys.

The workshop topics consist of FERS, FEGLI, FEHBP, Disability, Deposit/Redeposit ; TSP, Annual/Sick Leave, Annuity Calculation, Best Date to Retire, COLA's, ...

104

Proceedings of the 9th topical meeting on nuclear code development

... information about, utilized, or discussed these subjects: basic topics: overview materials and material types: ti-6al-4v, ti1100, ti17 , ti6242, imi 550 ...

105

Physiology of the Autonomic Nervous System

This issue is the collection of the papers presented at the title meeting. The 8 of the presented papers are indexed individually. (J.P.N.)

1996-02-01

106

Molecular cloning and analysis of lymphokines. Volume 13

This manuscript discusses the physiology of the autonomic nervous system (ANS). The following topics are presented: regulation of activity; efferent pathways; sympathetic and parasympathetic divisions;...Full Text Available

2007-08-15

107

Materials Research Science and Engineering Centers (MRSEC)

These proceedings collect papers on the subject of lymphokines. Topics include: DNA-cloning of mouse and human lymphokine genes, inteferons, interleukins, gene expression, tumor necrosis factors, and recombinant DNA.

1987-01-01

108

JPRS Report, Science Technology, Japan.

... centers in materials research. MRSECs address fundamental materials research topics of intellectual ... in materials research. II. PROGRAM DESCRIPTION MRSECs are supported by NSF to undertake materials ...

109

High Energy Physics Program at the University of Alabama

This is Japan Report with Science and Technology. It contains the issues with different topics on biotecnology, defense industry, nuclear engineering, Marine technology, science and technology policy.

1988-01-01

110

Health Topics beginning with A - National Institutes of Health...

This report discusses the following topics: study of Z{sup 0} decays; QCD; new particles; Higgs bosons; and forward hadron calorimeter system.

1990-09-01

111

Geothermal materials program: strategy. Final report

Skip Over Navigation Links U.S. Department of Health & Human Services National Institutes of Health NIH...Turning Discovery into Health For Employees Staff Directory En Español...

2011-08-26

112

FATIGUE OF BIOMATERIALS: HARD TISSUES

The following topics are discussed: program goal and objectives, program organization, and program status. Current program projects are described. (MHR)

1980-10-01

113

Emergencies > Poisoning > Lead Poisoning | Browse EPA Topics...

The fatigue and fracture behavior of hard tissues are topics of considerable interest today. This special group of organic materials comprises the highly mineralized and load-bearing tissues...Full Text Available

2010-09-01

114

Emergencies > Disasters > Floods | Browse EPA Topics | US EPA

Accidents Accident Preparedness, Accident Prevention, Chemical Accidents, Radiation Accidents Characterization Contingency Plans National Contingency Plan (NCP), Oil Removal...

2011-01-20

115

Electromagnetic fields and public health.

Accidents Accident Preparedness, Accident Prevention, Chemical Accidents, Radiation Accidents Characterization Contingency Plans National Contingency Plan (NCP), Oil Removal...

2011-01-20

116

Conference on Information Technology (2nd)/Special Session ...

A review of the literature is provided for the topic of health-related research and power frequency electromagnetic fields. Minimal evidence for concern is present on the basis of animal and plant research....Full Text Available

1987-11-01

117

A Research Needs Assessment for waste plastics recycling: Volume 2, Project report. Final report

... Topics includes: Formal methods in information engineering, Electronic documents and digital libraries Autonomous robots in embeded systems ...

2004-08-23

118

Rutherford backscattering study of the oxidation of palladium silicide on amorphous silicon substrates

This second volume contains detailed information on a number of specific topics relevant to the recovery/recycling of plastics.

1994-12-01

119

Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

120

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...

2003-12-31

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121

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

122

Characterization of arsenic dose loss at the Si/SiO{sub 2} interface

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

1993-07-16

123

Characterization of arsenic dose loss at the Si/SiO_2 interface

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

2000-03-01

124

Ten-nanometer surface intrusions in room temperature silicon

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

2000-03-01

125

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

2002-01-01

126

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

2005-12-15

127

Selective emitters for thermophotovoltaic solar energy conversion

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

2005-12-15

128

Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

1983-12-01

129

Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

2005-11-14

130

Hall mobility minimum of temperature dependence in polycrystalline silicon

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

1997-09-01

131

Effect of mineralizer on the nitridation of sialon-bonded silicon carbide products

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

1998-01-01

132

Water Topics | Laws and Regulations | US EPA

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

133

The Atomic Energy Control Board criteria for identification and evaluation of fire hazards in nuclear power stations

...Disinfection Byproducts, Mercury, Lead, Copper, Arsenic ,Pathogens,Radionuclides,Drinking Water Contaminants,Microbial Pathogens,Fertilizer, Water Topics | Laws and Regulations | US EPA Jump to main content A-Z Index Advanced Search What are you looking for? Learn the Issues Science & Technology Laws &...

134

This report presents criteria for the identification and evaluation of fire hazards in nuclear power stations. The report presents criteria that are consistent with the existing regulatory approach in Canada, and outlines engineering tools and analytical techniques currently available to deterministically analyse fire. The criteria presented cover the topics which should be included in a fire hazard analysis and provide details of each topic so that the accuracy of an analysis may be evaluated.

2000-12-10

135

The 6th GRS conference

Summary and closing remarks

On the 3. and 4. November 1982 the sixth conference of the Corporation for Reactor Safety (GRS) was held in Cologne's Guerzenich. The theme of this year's meeting was the 'Status of Risk Investigations at Nuclear Power Plants'. A principal topic was a report on findings made by the GRS during the 'Risk Oriented Analysis SNR-300'. The second topic comprised the newest developments within Phase B of the Risk Study of Water Pressure Reactors, the discussion of the dose/effect relationship and considerations on threshold risk values. (orig.).

136

Proceedings of the international topical meeting on remote systems and robotics in hostile environments

A summary of the topics covered in papers presented at the 1995 Brookhaven joint conference on production, neutralization, and application of negative ion beams is given. The conference topics covered included plasma ion sources, plasma seeding of these sources for increased ion production, beam extraction and transport, computer simulation and design studies, and operation of existing and experimental ion source facilities. Application of the sources to accelerator, tokamak, and thin film deposition are discussed. (AIP) {copyright} {ital 1996 American Institute of Physics.}

1996-07-01

137

Whispering gallery modes in silicon-nanocrystal-coated silica microspheres

This book contains the proceedings of the International Topical Meeting on Remote Systems and Robotics in Hostile Environments. It is organized under the following sessions: Worldwide Applications Overview; Operating Mobile Systems; Sensors and Control Systems; Space Applications; Reactor Operations and Surveillance; Remote Equipment for Hazardous Operations; Future Mobile System; Mining and Construction Operations; Special Applications; Hot Cell Applications; Processing; Reactor Operations and Maintenance; Decontamination and Waste Handling; Remote Handling Development and Demonstration.

138

The effect of neutron dose and boron doping on X-ray diffraction in neutron irradiated silicon and germanium

Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.

2007-10-15

139

Surface activity and water repellency properties of cleavable-modified silicone surfactants

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

140

British Library Electronic Table of Contents (United Kingdom)

A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...

2006-01-01

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141

Summary of NSF Workshop on Research Opportunities in Manufacturing in the Process Industries

Studies of relativistic heavy ion collisions at the AGS (Experiment 814)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

142

Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides

This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)

1990-01-01

143

Role of MeV ion implantation in limiting transient enhanced diffusion of boron atoms in silicon

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

144

Recent advances in silicon-germanium alloy technology and an assessment of the problems of building the modules for a radioisotope thermoelectric generator

English Jul 2001 p. 143-144 China Liu Changlong Academia Sinica,

2001-07-01

145

PolyRAD Space Radiation Shield for Commercial-Off-The

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

146

Phonon - Drag Thermopo wer in Dilute Copper Alloys - NASA ...

Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...

147

Performance of ceramics in ring/cylinder applications

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

148

Non-linearity and hysteresis of Hall effect in magnetorheological suspensions with conducting carrier

In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.

1987-01-01

149

Investigation of lattice strains in layered structures containing porous silicon

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

2003-08-01

150

Integrated Optics Anisotropic Waveguides and Devices

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

2001-09-23

151

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF_2"+ ion implantation into silicon

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

1989-04-30

152

Effect of recoil implantation of oxygen on boron enhanced diffusion in silicon

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

2002-01-01

153

Effect of Si_3N_4 whisker and SiC platelet addition on phase transformation and mechanical properties of the #alpha#/#beta# sialon matrix composites

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

1989-04-25

154

Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

155

Determination of the hydrogen content of a-Si films by infrared spectroscopy and 25 MeV #alpha#-particle elastic scattering

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

2006-03-06

156

Chromium-Manganese Nonmagnetic Steels

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

157

International Science & Technology Center (ISTC)

Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures

158

Boron diffusion in amorphous silicon

Boron diffusion in amorphous silicon

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

2005-12-05

159

Adhesive wear of iron chromium nickel silicon manganese molybdenum niobium alloys with duplex structure. Untersuchung von Eisen-Chrom-Nickel-Silizium-Mangan-Molybdaen-Niob-Legierungen mit Duplexgefuege auf adhaesiven Verschleiss

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

2005-12-05

160

Acrobat Distiller, Job 7 - GLTRS - NASA

Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

1991-11-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

161

8 - NASA Technical Reports Server

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

162

Theoretical transition energies, lifetimes and fluorescence yields of multiply ionized silicon

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

163

The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D

Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.

1982-01-01

164

Study of transient enhanced dopant diffusion in silicon and proposed limiting methods

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

1994-06-01

165

Soft X-ray spectra of amorphous hydrogenated silicon

The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

2001-09-01

166

Silicone-rubber washers soothe vibrating transmission lines

The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

1985-06-01

167

Silicon nanopowder as active material for hybrid electrodes of lithium-ion batteries

Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.

1965-01-01

168

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

2011-01-01

169

On the theory of transient enhanced diffusion in boron-implanted silicon

On the theory of transient enhanced diffusion in boron-implanted silicon

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

1991-01-01

170

Hardening process relating to the irradiation of active electronic components and large hardened components

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

171

Developments and tests of double-sided silicon strip detectors and read-out electronics for the Internal Tracking System of ALICE at LHC

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

1988-12-09

172

Determination of the conversion factor for infrared measurements of carbon in silicon

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

1999-01-01

173

Boron uphill diffusion during ultrashallow junction formation

The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.

1986-10-01

174

Application of Pd silicide in the process of silicon detectors

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

2003-05-26

175

Anomalous sputter yields due to cascade mixing

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

1990-04-01

176

Anomalous sputter yields due to cascade mixing

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

1980-05-01

177

17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

178

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

2007-08-01

179

Radiation-induced segregation in light-ion bombarded Ni-8% Si

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...

2004-06-01

180

Investigation of #alpha#-sialon formation by high temperature X-ray diffraction

Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...

1986-01-01

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181

Enhanced biosorptive removal of cadmium from aqueous solutions by silicon dioxide nano-powder, heat inactivated and immobilized Aspergillus ustus

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...

1993-10-04

182

British Library Electronic Table of Contents (United Kingdom)

Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...

2011-01-01

183

Electrochemical characterisation of patterned carbon nanotube electrodes on silane modified silicon

Construction and Calibration of the Laser Alignment System for the CMS Tracker

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...

2008-07-20

184

A plasma process for the synthesis of cubic-shaped silicon nanocrystals for nanoelectronic devices

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...

2006-01-01

185

Utilization of the hydrogen-microautoclave in support of the coal liquefaction process, topical report No. 9. Wilsonville advanced coal liquefaction research and development facility, Wilsonville, Alabama

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...

2007-04-21

186

USGS Water-Quality Information: Fecal Indicator Bacteria

This topical report presents data and results obtained from the hydrogen microautoclave. The autoclave has been used to test for the quality of hydrotreater residue product and hydrotreater catalyst activity. Data obtained from Run 242 and the first part of Run 243 is presented in a convenient format and conclusions based upon this data are summarized. Some of the topics discussed in this report are the following: development and description of procedures for the catalyst and hydrotreater residue, the significance of test results and their meaning, and the relationship of test results to process performance. 7 references, 13 tables, 22 figures.

1984-05-01

187

Topical Application of 5-Aminolevulinic Acid Hexyl Ester and 5-Aminolevulinic Acid to Normal Nude Mouse Skin: ...

USGS - science for a changing world USGS Home Contact USGS Search USGS USGS Water-Quality Information * Home * Data * Methods * Labs * Publications * Topics * Programs * Contact Us...

2011-08-27

188

Theory of chemical reaction dynamics. Volume 3

... J. W. and R. A. de Zeeuw. 1990. Transdermal drug delivery: efficacy and potential applications of the penetration enhancer ... ...

189

The workplace: Monitoring and prevention of occupational hazards. Volume 4

This book examines some of the basic principles behind chemical reaction kinetics. Topics considered include the classical trajectory approach to reactive scattering; periodic orbits and theory of reactive scattering; and semiclassical reactive scattering.

1985-01-01

190

The possible detection of magnetic monopoles and monopole tachyons

This book examines the occupational health hazards imposed by neoplasms. Topics considered include: cancer as an occupational hazard; an overview; epidemiological evidence; and interaction of host and lifestyle factors with occupational chemicals in cancer causation.

1985-01-01

191

Texas - Energy Collaborations Working for the Environment

This paper discusses the possible detection of magnetic monopoles and monopole tachyons. Topics considered include insects, astrophysics, general relativity theory, plants, and biotechnology. The paper was presented at an international symposium on non-conventional energy technology.

192

Syndecan-Fc Hybrid Molecule as a Potent In Vitro Microbicidal Anti-HIV-1 Agent?

This fact sheet highlights how renewable energy and energy efficiency technologies can and are being used to reduce air emissions and meet environmental goals, showcasing case studies and technology-specific topics.

2007-12-01

193

Study Shows Chamomile Capsules Ease Anxiety Symptoms [NCCAM Research...

In the absence of a vaccine, there is an urgent need for the development of safe and effective topical microbicides to prevent the sexual transmission of human immunodeficiency virus type 1 (HIV-1)....Full Text Available

2010-07-01

194

Sigma-1 receptor agonist fluvoxamine for postoperative delirium in older adults: report of three cases

Topics Research Results Research Results by Date Study Shows Chamomile Capsules Ease Anxiety Symptoms Chamomile © Karen Bergeron Generalized anxiety disorder (GAD) has a wide...

2011-09-03

195

Sex, Gender, and Pain: A Review of Recent Clinical and Experimental Findings

BackgroundPostoperative delirium is a topic of great importance in the geriatric surgical specialty. Although antipsychotic drugs are the medications most frequently used to treat...Full Text Available

196

Sex modifies exercise and cardiac adaptation in mice

Sex-related influences on pain and analgesia have become a topic of tremendous scientific and clinical interest, especially in the last 10 to 15 years. Members of our research group published...Full Text Available

2009-05-01

197

Second international seminar of horizontal steam generator modelling.

How an individual’s sex and genetic background modify cardiac adaptation to increased workload is a topic of great interest. We systematically evaluated morphological and physiological...Full Text Available

2004-12-01

198

Savannah River Technology Center monthly report

The Second International Seminar on Horizontal Steam Generator Modelling was arranged to continue the international cooperation that was started during the first seminar in March 1991. The main topics of the seminar were: (1) further experimental results ...

1993-01-01

199

SBIR 98-I Awards by Topic - NASA's SBIR & STTR Programs

This report for the month of June 1995 presents information on the typical topics of tritium processing, environmental studies, waste management issues, and miscellaneous projects. The document consists many small reports by individuals or small groups.

1995-06-01

200

Reverse Engineering of Gene Regulatory Networks: A Comparative Study

... NC 27605 Winnie Liao (919) 821-5950 98-1-02.01-5950 LaRC Design of Damage- Tolerant Composite Sandwich Panels with Tear Straps American Technology ...

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

201

Research into coal utilization at CSIRO. [Australia

Reverse engineering of gene regulatory networks has been an intensively studied topic in bioinformatics since it constitutes an intermediate step from explorative to causative gene expression...Full Text Available

2009-01-01

202

Research in heavy-ion nuclear physics

CSIRO is Australia's one and only federal government research organization. After a description of Australian coal resources and coal-related research, accounts are given of the selection of research topics at CSIRO and of the coal utilization and coal liquefaction research which is being undertaken.

1983-01-01

203

Remedial action and site design for stabilization of the inactive uranium mill tailings sites at Slick Rock, Colorado. Attachment 2, Geology report

This report discusses the following topics: Fusion-fission in light nuclear systems; High-resolution Q-value measurement for the {sup 24}Mg+{sup 24}Mg reaction; Heavy-ion reactions and limits to fusion; and Hybrid MWPC-Bragg curve detector development.

1992-01-01

204

Preparation and Evaluation of Buccal Bioadhesive Films Containing Clotrimazole

This report presents geologic considerations that are pertinent to the Remedial Action Plan for Slick Rock mill tailings. Topics covered include regional geology, site geology, geologic stability, and geologic suitability.

1993-07-01

205

Potential of cattails as an energy source. Final report

Buccal bioadhesive films, releasing topical drugs in the oral cavity at a slow and predetermined rate, provide distinct advantages over traditional dosage forms. The aim of present study was to prepare...Full Text Available

206

Photoexcited charge pair escape and recombination

Research on the feasibility of growing cattails as an energy crop is described. The following topics are included: productivity in natural strands, germination requirements for seed, establishing stands by seeding, rhizome dormancy and development, harvesting and stand establishment, and analysis of canopy structure and radiation profiles in a natural community. (MHR)

1980-01-01

207

Obtaining a contact lens acquired electroretinogram in the presence of topical anesthetic hypersensitivity.

Overviews, publications, and new directions are presented for the following research topics: geminate charge pairs in hexane, dipoles in nonpolar and polar organic liquids, organic donor-acceptor interfaces, and charge-transfer states (phenanthrene/PMDA).

1992-09-15

208

Nuclear proliferation today: The spread of nuclear weapons

Clinical circumstances often demand flexibility in electrodiagnostic procedures. We present a clinical case that required alteration of our routine full-field electroretinography technique. The patient presented with reports of allergy to Xylocaine (lidocaine) and refused the use of any type of topical anesthetic drops. This conflicted with our routine ERG method that combines the use of the Henkes Lovac hard contact lens and the topical anesthetic Alcaine (proparacaine hydrochloride). We acquired a successful electroretinogram without topical anesthesia by using a "piggy-back" system involving the interposition of a soft hydrophilic contact lens between the cornea and the recording hard lens. The procedure yielded excellent ERG recordings and was well tolerated. This non-routine technique was also compared to our standard ERG technique using a normal volunteer. It appears that this proposed "piggy-back" technique is a ...

2007-11-06

209

Nonlinear response of superconductors to alternating fields and currents

Announced as the first of a series of annual reports on the spread of nuclear weapons, this endeavor of the Carnegie Endowment for International Peace may stimulate increased public awareness of this critical topic. A good part of the book contains the historical setting of the nuclear issue in the eight most likely proliferators.

1984-01-01

210

Nasal retention of budesonide and fluticasone in man: Formation of airway mucosal budesonide-esters in vivo

This report discusses the following topics on superconductivity: nonlinearities in hard superconductors such as surface impedance of a type II superconductimg half space and harmonic generation and intermodulation due to alternating transport currents; and nonlinearities in superconducting weak links such as harmonic generation by a long Josephson Junction in a superconducting slab.

1997-10-08

211

MHD equilibrium and stability in heliotron plasmas

AimsThe efficacy of topical glucocorticosteroids in rhinitis and asthma is likely to depend on drug retention in the airway mucosa. With fluticasone propionate, retention may be...Full Text Available

2001-02-01

212

MEDLINE SDI services: how do they compare?*

Recent topics in the theoretical magnetohydrodynamic (MHD) analysis in the heliotron configuration are overviewed. Particularly, properties of three-dimensional equilibria, stability boundary of the interchange mode, effects of the net toroidal current including the bootstrap current and the ballooning mode stability are focused. (author)

1999-09-01

213

Investigation of Stress Concentration in Reinforced Concrete Components.

Introduction: Selective dissemination of information (SDI) services regularly alert users to new information on their chosen topics. This type of service can increase a user's ability to...Full Text Available

2003-10-01

214

This report is a continuation of the former efforts to elucidate the behavior of ferrocement concrete in static and dynamic stress fields. The influence of various reinforcements on pre and post cracking of thin sections forms the main topic of this repor...

1974-01-01

215

Indirect liquefaction

Heat transfer. Fundamentals. 5. rev. ed.

Research programs, presented at the contractor's review meeting on indirect liquefaction, are presented on the following topics: oxygenates (methanol) synthesis; Fischer-Tropsch synthesis; product upgrading; and process support engineering evaluations. A total of 18 reports are included. Individual projects are processed separately for the data bases. (CBS)

1989-01-01

216

This textbook contains the following main topics: Heat conductivity, convection, condensation and evaporation, radiation heat transfer and heat exchangers. It includes the physical foundations for all these aspects and many examples. (orig.)

217

Geothermal status report

Forschungszentrum Juelich, Institut fuer Kernphysik/COSY. Annual report 2004

This article examines the effects of competition of geothermal energy production with other technologies. The topics of the article include near-term market growth, cause for cautious optimism, limits to development of geothermal energy production, economic arguments for development of geothermal power plants, the effects of a competitive market on industry survival.

218

Face or building superiority in peripheral vision reversed by task requirements

The following topics are dealt with: Detectors at COSY, major physics results at COSY, physics at external facilities, theoretical investigations, COSY operation and developments, preparations for FAIR, technical developments. (HSI)

2005-03-01

219

FAQ: Earthquakes, Faults, Plate Tectonics, Earth Structure

Peripheral vision has been the topic of few studies compared with central vision. Nevertheless, given that visual information covers all the visual field and that relevant information can...Full Text Available

220

This frequently-asked-questions feature provides answers about earthquakes, faults, plate tectonics, and earth structure. Maps and diagrams are provided with some answers, and links to additional information and to related topics are included.

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221

Exploration technology

Energizing the batteries for electric cars

The paper evaluates exploration technology. Topics discussed are: Visions; the subsurface challenge; the creative tension; the exploration process; seismic; geology; organic geochemistry; seismic resolution; integration; drilling; value creation. 4 refs., 22 figs.

1996-12-31

222

Economic and financial issues relating to renewable energy systems in developing countires

This article reports of the nickel-metal-hydride battery and its ability to compete with the lead-acid battery in electric-powered vehicles. The topics of the article include development of the battery, the impetus for development in California environmental law, battery performance, packaging for the battery's hazardous materials, and the solid electrolyte battery.

1993-07-01

223

ELECTRONIC COMPONENT COOLING ALTERNATIVES: COMPRESSED AIR AND LIQUID NITROGEN

The problems of introducing renewable energy systems into communities having meagre resources are analysed. Topics covered include financial and economic barriers, subsidies and bank policy. It is concluded that without satisfactory financing mechanisms, renewable energies are unlikely to be widespread in the developing world. (UK)

1995-12-31

224

Direct liquefaction contractors' review meeting: Proceedings

The goal of this study was to evaluate topics used to troubleshoot circuit boards with known or suspected thermally intermittent components. Failure modes for thermally intermittent components are typically mechanical defects, such as cracks in solder paths or joints, or broken b...

225

Direct liquefaction contractors' review meeting

Research programs on coal liquefaction are presented. Major topics include: coprocessing, two-stage liquefaction, low severity liquefaction, coal/catalyst and liquefaction chemistry. Individual projects are processed separately for the data bases. (CBS)

1988-01-01

226

Decontamination of nuclear facilities

Research programs, presented at the contractor's review meeting on direct liquefaction, are presented under the following topics: two-stage liquefaction; coprocessing; and advanced research on coal liquefaction. A total of 20 reports are included. Individual projects are processed separately for the data bases. (CBS)

1989-01-01

227

Cooperative research in coal liquefaction infratechnology and generic technology development

Thirty-seven papers were presented at this conference in five sessions. Topics covered include regulation, control and consequences of decontamination; decontamination of components and facilities; chemical and non-chemical methods of decontamination; and TMI decontamination experience.

1982-09-19

228

Complementarity of Integral and Differential Experiments for Reactor Physics Purposes.

Cooperative research in coal liquefaction from Auburn University, University of Kentucky, University of Pittsburgh, West Virginia University, University of Utah, and the UK Center for Applied Energy Research, are briefly discussed. Topics covered include desulfurization, chemical reactivity, coprocessing, and catalysis. (CBS)

1989-01-01

229

Boule and the Evolutionary Origin of Metazoan Gametogenesis: A Grandpa's Tale

In this paper, the following topics are studied: uranium 238 effective integral; thermal range uranium 238 capture cross section; Americium 242 m capture cross section. The mentioned examples show that differential and integral experiments are both useful...

1981-01-01

230

Basic processes in internal combustion engines. 1989

The evolution of sex remains a hotly debated topic in evolutionary biology. In particular, studying the origins of the molecular mechanisms underlying sexual reproduction and gametogenesis (its fundamental...Full Text Available

231

Asymptotic functions and multiplication of distributions

This book contains 8 papers including the topics of: Spray and Flame Structure in Diesel Combustion; Experimental and Theoretical Investigations of Diesel Injection Transients; Lead-Fuel Governor System - Dual-Fuel Engine; Fuel Spray Modeling in Swirling Flows.

1989-01-01

232

An Introduction to Malware

Considered is a new type of generalized asymptotic functions, which are not functionals on some space of test functions as the Schwartz distributions. The definition of the generalized asymptotic functions is given. It is pointed out that in future the particular asymptotic functions will be used for solving some topics of quantum mechanics and quantum theory.

1976-01-26

233

DEFF Research Database (Denmark)

These notes intended for use in DTU course 02233 on Network Security give a short introduction to the topic of malware. The most important types of malware are described, together with their basic principles of operation and dissemination, and defences against malware are discussed.

234

A caGRID-ENABLED, LEARNING BASED IMAGE SEGMENTATION METHOD FOR HISTOPATHOLOGY SPECIMENS

A New Efficient Method of Topical Cooling and Rewarming of the Myocardium

Accurate segmentation of tissue microarrays is a challenging topic because of some of the similarities exhibited by normal tissue and tumor regions. Processing speed is another consideration...Full Text Available

2009-07-01

235

The rate-limiting mechanism of transition metal gettering in multicrystalline silicon

Profound myocardial hypothermia (below 17° C, and more often around 12° C) is imperative in myocardial protection while the aorta is cross-clamped. Based on our experience in...Full Text Available

1985-12-01

236

Silicon purification melting for photovoltaic applications

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...

1997-04-01

237

Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (XVIII), December 1, 1979-February 29, 1980

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

2000-04-01

238

A kinetic and mechanistic study of the oxidation of silicon- and thin metal silicide layers

Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...

1980-03-01

239

Water-repellency and antibacterial activities of plasma-treated cleavable silicone surfactants on nylon fabrics

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...

240

British Library Electronic Table of Contents (United Kingdom)

In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...

2006-01-01

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241

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

1985-08-01

242

The fraction of substitutional boron in silicon during ion implantation and thermal annealing

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

243

The fraction of substitutional boron in silicon during ion implantation and thermal annealing

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

1998-05-01

244

The formation of aluminum phosphide in aluminum melt treated with an Al-Fe-P inoculant addition

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

1998-05-01

245

Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum

The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)

2001-04-01

246

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

2011-01-01

247

Solar thermophotovoltaic (STPV) system with thermal energy storage

Schottky barrier modulation on silicon nanowires

A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}

1996-02-01

248

SSRM characterisation of FIB induced damage in silicon

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

2007-03-26

249

Response characteristics of base-isolated structure with silicone rubber bearings

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.

2008-03-01

250

Properties of low residual stress silicon oxynitrides used as a sacrificial layer

More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992

1993-08-15

251

Prediction of transient-enhanced diffusion during rapid thermal annealing of ion-implanted silicon

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

2000-01-04

252

Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

1985-03-01

253

Photoluminescence in large fluence radiation irradiated space silicon solar cells

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

1999-01-01

254

Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

1997-03-01

255

Nano silicon for lithium-ion batteries

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

2011-07-07

256

Metallization of large silicon wafers. Quarterly technical report No. 1, August 26--December 31, 1977. [45 references

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)

2006-11-12

257

Material-induced shunts in multicrystalline silicon solar cells

A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).

1977-01-01

258

Material-induced shunts in multicrystalline silicon solar cells

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-15

259

Material-induced shunts in multicrystalline silicon solar cells

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-01

260

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-01-01

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261

Macro-Cellular Silicon carbide Reactors for Nonstationary Combustion Under Piston Engine-Like Conditions

British Library Electronic Table of Contents (United Kingdom)

Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.

2011-01-01

262

Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films

Influence of silicon, copper and cobalt on corrosion cracking and pitting corrosion in 03Kh18N30 steel

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

1998-09-01

263

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.

264

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

265

Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

266

A Versatile Evaporative Cooling System Designed for Use in an Elementary Particle Detector

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

267

British Library Electronic Table of Contents (United Kingdom)

An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...

2007-01-01

268

Wafer and Solar Cell Characterization by GT-PVSCAN6000

Transient enhanced diffusion of boron in silicon: The interstitial flux

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

2002-08-01

269

Transient enhanced diffusion of boron in silicon: The interstitial flux

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...

1997-11-01

270

Thermal stability and acid resistance of aluminosilicophosphate zeolites

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...

1996-12-02

271

Observed energy dependence of Fano factor in silicon at hard X-ray energies

By isomorphous replacement of silicon by phosphorus the authors have synthesized crystalline aluminosilicophosphates with structures of the zeolites type A and faujasite. They determine the adsorption capacity of specimens treated at 575-1275/sup 0/K. They show that the thermal stability and acid resistance of aluminosilicophosphates depend on the quantity of phosphorus in their structure.

1987-04-01

272

Method of restoring degraded solar cells

An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.

1999-03-01

273

Metallization of large silicon wafers. Final report

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

1983-01-01

274

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...

275

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} ...

2004-11-15

276

J4P Evaluation of Externally Heated Pulsed MPD Thruster Cathodes

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...

2004-11-01

277

Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors

twenty 350 V, 2.5 mF aluminum electrolytic capacitors with 10.8 mH inductors made of multi-strand wire. The PFN discharge was controlled using an silicon ...

278

Investigations into the nature of a silicoaluminophosphate with the faujasite structure

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...

1992-08-28

279

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF{sub 2}{sup +} ion implantation into silicon

The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.

1987-04-29

280

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

2002-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

281

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

2004-06-30

282

INVESTIGATION OF GLASS-METAL COMPOSITE ...

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

2004-06-30

283

Evolution of surface roughness in silicon X-ray mirrors exposed to a low-energy ion beam

... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...

1957-09-01

284

Enhancing stability of austenitic stainless steels to intergranular corrosion in strongly-oxidising media by regulating composition of impurities

The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...

2010-05-01

285

Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At ...

1984-01-01

286

Displaced capillary dies

Chromized/siliconized diffusion coatings for iron-base alloy by pack cementation

An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.

1982-01-01

287

Changes in colonic motility induced by sennosides in dogs: evidence of a prostaglandin mediation.

This paper reports that the co-deposition of chromium and silicon into a 2.25Cr-1.0Mo-0.15C steel, alloy 800, and type 304 stainless steel has been achieved using the pack cementation process. The ferritic coating produced on the 2.25 Cr-1.0Mo steel was approximately 225 {mu}m (9 mils) thick, whereas the inward diffusion of chromium and silicon produced a two-phase structure of ferrite and austenite for type 304. Chromium and silicon were incorporated into the austenitic solid solution upon diffusion into alloy 800. All coatings had approximately 25 to 35 wt% Cr and 2 to 3% Si at the surface. Cyclic oxidation testing in air of the coated 2.25Cr-1.0Mo steel (T = 700{degrees} C) and type 304 (T = 1035{degrees} C) showed a dramatic decrease in the oxidation kinetics compared to the original uncoated alloys. The cyclic oxidation of alloy 800 was also improved.

1991-09-01

288

An analytic representation of the radial distribution of dose from energetic heavy ions in water, Si, LiF, and NaI

The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available

1988-09-01

289

2005 NASA Executive Capability Roadmap Report

An earlier representation of the radial distribution of dose about the path of a heavy ion in liquid water is modified and extended to include silicon, lithium fluoride, and sodium iodide. 6 refs., 5 figs., 1 tab.

1989-09-01

290

.N& 21762 - NASA Technical Report Server (NTRS)

ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...

291

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon

of the supplier of pulled p-type silicon material. of G-6 and E 8 centers irradiated in the 1 t o 3 MeV range. tions w i l l be performed using the General ...

292

Simple integral screenprinting process for selective emitter polycrystalline silicon solar cells

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

1998-09-18

293

Self-interstitial supersaturation during Ostwald ripening of end-of-range defects in ion-implanted silicon

This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.

1991-09-23

294

Reactive sticking coefficients for silane and disilane on polycrystalline silicon

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

1996-12-01

295

Polysilicon TFT fabrication on plastic substrates

Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.

1988-04-15

296

On the influence of silicon oxide nanoparticles on the optical and surface properties of hybrid (inorganic-organic) barrier materials

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

1997-08-06

297

Observation of a surface peak in low energy implant depth profiles in silicon

One of the major scientific and technological challenges for the production of flexible organic electronic devices is the device protection against atmospheric molecule permeation, which causes corrosion reducing its operation and lifetime. In this work, Spectroscopic Ellipsometry has been implemented to investigate the influence of silicon dioxide nanoparticles on the optical properties of hybrid polymers. The spectra analysis revealed valuable information about the electronic and vibrational response as well as the cross-linking mechanisms of these materials. The correlation of the optical properties with the synthesis parameters and the barrier response will contribute towards their optimization in order to be used as high barrier coatings for flexible organic electronics applications.

2009-10-01

298

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

1984-03-01

299

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1997-11-01

300

Measurement of liquid xenon scintillation from heavy ions using a silicon photodiode

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1996-12-02

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

301

Laser-assisted solar cell metallization processing. Quarterly report No. 6, March 1-June 30, 1985

Scintillation light in liquid xenon excited by 100 MeV/n Al ions was detected with a home-made silicon photodiode. The diameter of the photodiode was 2 inch. The effective quantum efficiency was observed to be 22% for the wavelength of liquid xenon scintillation light (170 nm), while the effective quantum efficiency for 5.486 MeV alpha-particle excitation was 44%. An energy resolution of 0.5% rms was achieved for the energy deposition of 2.5 GeV in liquid xenon using a fast preamplifier ({approx equal} 20 ns). (orig.).

1991-11-15

302

Development of low cost contacts to silicon solar cells

A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.

1985-07-25

303

Combining laser chemical processing and aerosol jet printing: a laboratory scale feasibility study

The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.

1980-01-01

304

British Library Electronic Table of Contents (United Kingdom)

Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.

2011-01-01

305

SIMS analysis of silicon on insulator structures formed by high-dose O/sup +/ implantation into silicon

Molecular dynamics studies of silicon ion implantation

Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...

1983-12-15

306

Light-weight free-standing carbon nanotube-silicon films for anodes of lithium ion batteries.

Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary ...

1994-12-31

307

Phosphorus and nitrogen in the eutrophication of waters. Fosfori ja typpi vesien rehevoeittaejinae - vaikutusten arviointi

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...

2010-07-27

308

Hot Topics in Chinese Herbal Drugs Research Documented in PubMed/MEDLINE? by Authors Inside China and Outside of China in the Past 10 Years: Based on Co-Word Cluster Analysis

This report is a summary of the contribution of nitrogen and phosphorus in the eutrophication process of inland and coastal waters. Special attention was paid to the mechanisms of these nutrients in regulating biological processes and to the methods available in estimating their effects in the eutrophication of water bodies. The report includes five chapters which are entitled: Introduction, which is a general background to the subject with special attention to the requirements of the Finnish Water Act. Phosphorus and nitrogen as factors regulating biological processes. The topics included are: definition of eutrophication, forms of phosphorus and nitrogen and their sources to inland and coastal waters, effects of these nutrients as growth factors of phytoplankton and macrophytes and consequences of eutrophication. Estimation of the effects of phosphorus and nitrogen. The topics discussed from the point of view of the tasks of the National ...

1992-01-01

309

British Library Electronic Table of Contents (United Kingdom)

Abstract Objective: This study aims to gain an overview of hot topics related to research focused on Chinese herbal drugs by authors inside China and outside of China in the past 10 years. Methods: PubMed/MEDLINE was utilized in order to investigate and select research that was published on ?Chinese herbal drugs?? from 1998 to 2007, by authors located both inside and outside of China (MeSH terms were downloaded and ranked). MeSH terms that frequently appeared were identified and co-word analysis was carried out for two groups: (1) authors located in China, and (2) authors based outside of China, respectively. The hot topics concerning research into Chinese herbal drugs were concluded after cluster analysis and related document analysis. Results: For authors in the China group versus those ...

2009-01-01

310

Future Accelerators, Muon Colliders, and Neutrino Factories

Workshop on tritium safety and environmental effects, October 15--17, 1990, Aiken, South Carolina: Session summaries

Particle physics is driven by five great topics. Neutrino oscillations and masses are now at the fore. The standard model with extensions to supersymmetry and a Higgs to generate mass explains much of the field. The origins of CP violation are not understood. The possibility of extra dimensions has raised tantalizing new questions. A fifth topic lurking in the background is the possibility of something totally different. Many of the questions raised by these topics require powerful new accelerators. It is not an overstatement to say that for some of the issues, the accelerator is almost the experiment. Indeed some of the questions require machines beyond our present capability. As this volume attests, there are parts of the particle physics program that have been significantly advanced without the use of accelerators such as the subject of neutrino oscillations and many aspects of the particle-cosmology interface. At this ...

2001-12-19

311

The internationalization of nuclear law. 10th regional conference of the German national group of AIDN/INLA held in Celle; Die Internationalisierung des Atomrechts. 10. Regionaltagung der Deutschen Landesgruppe der AIDN/INLA in Celle

A meeting was held on October 15, 16, 17, 1990 to discuss the state of tritium safety and environmental effects. The meeting was organized with the help of the International Energy Agency planning committee consisting of K. Steinmetz, Y. Seki, G. Nardella, and G. Vivian. Representative of tritium production facilities and heavy water reactor power production were also involved. The meeting was organized to address seven topics in tritium safety that were thought to require further work. The topics were: (1) materials science, (2) environmental models, (3) environmental model validation, (4) tritiated organic compounds, (5) human dosimetry, (6) tritium sampling and measurement, and (7) long-term environmental databases.

1991-04-18

312

Safety philosophy and concepts for large liquid metal breeder reactor power plants

The German National Group of the International Nuclear Law Association, AIDN/INLA, held its 10{sup th} regional conference in Celle on September 2 and 3, 2004. The event was attended by approx. 120 participants from twenty countries discussing 'the Internationalization of Nuclear Law'. Four sessions were devoted to in-depth studies of these topics: - Legal problems associated with the management of radioactive waste. - Regional nuclear safety vs. global nuclear safety. Do the Europeans need a supplementary EU regime of nuclear safety? - Liability and insurance in cases of nuclear damage. - Topical issues of German nuclear law. (orig.)

2004-10-01

313

Safety philosophy and concepts for large liquid metal breeder reactor power plants

This paper addresses the unique related aspects of the LMFBR concept which are of significance to containment design and structural analysis. Topics covered include: Primary boundary integrity assurance; Effects of sodium spills on integrity of structures; Provisions being considered for containment of melted cores; Fuel handling accidents. Specific reference is made to the FFTF and the Clinch River Breeder Reactor Project designs and methods of treatment of the above problems. In particular, the part played by tests, such as those carried out on a simulated FFTF model, and the planned structural reliability and related programs are considered. Where practicable, these topics are addressed in a manner which places FFTF and CRBR in context with other LMFBR's and point to a possible direction for future American LMFBR designs. (Auth.).

314

Polymeric nanosponges as an alternative carrier for improved retention of econazole nitrate onto the skin through topical hydrogel formulation

This paper will adress the unique safety related aspects of the LMFBR concept which are of significance to containment design and structural analyses. Topics to be covered will include: primary boundary integrity assurance; effects of sodium spills on integrity of structures; provisions being considered for containment of melted cores; and fuel handling accidents. Specific reference will be made to the FFTF and the Clinch River Breeder Reactor Project designs and methods of treatment of the above problems. In particular, the part played by tests, such as those carried out on a simulated FFTF model, and the planned structural reliability and related programs will be considered. Where practicable, these topics will be addressed in a manner which places FFTF and CRBR in context with other LMFBR's, and will point to a possible direction for future American LMFBR designs.

1975-09-01

315

British Library Electronic Table of Contents (United Kingdom)

The present study was carried out to exploit the feasibility of using polymeric nanosponges as an alternative carrier for targeting econazole nitrate (EN) to the skin through topical hydrogel formulation. Nanosponges prepared by emulsion solvent diffusion method were evaluated for various physicochemical parameters and in vitro drug release. The nanosponges of EN were discrete free flowing nanosized particles with perforated orange peel like morphology as visualized by SEM. The nanosponge formulated using PVA:EC (3:2) displayed highest in vitro release after 12 ?h in phosphate buffer (pH 6.8) that fitted matrix model. Selected nanosponge was formulated as Carbopol 934 NF hydrogel using varying concentrations of permeation enhancers propylene glycol and N-methyl-2-pyrrolidone. The EN nanosp...

2011-01-01

316

Plan for addressing issues relating to oil shale plant siting

Microbial keratitis after corneal laser refractive surgery

The Western Research Institute plan for addressing oil shale plant siting methodology calls for identifying the available resources such as oil shale, water, topography and transportation, and human resources. Restrictions on development are addressed: land ownership, land use, water rights, environment, socioeconomics, culture, health and safety, and other institutional restrictions. Descriptions of the technologies for development of oil shale resources are included. The impacts of oil shale development on the environment, socioeconomic structure, water availability, and other conditions are discussed. Finally, the Western Research Institute plan proposes to integrate these topics to develop a flow chart for oil shale plant siting. Western Research Institute has (1) identified relative topics for shale oil plant siting, (2) surveyed both published and unpublished information, and (3) identified data gaps and research needs. 910 refs., 3 ...

1987-09-01

317

British Library Electronic Table of Contents (United Kingdom)

Corneal laser refractive surgery is increasingly being performed on patients with the aim of improving unaided vision. Most candidates for surgery have excellent spectacle- or contact lens-corrected vision. Although microbial keratitis following refractive surgery is a rare complication, and usually has a good visual outcome, it can be sight-threatening. The spectrum of pathogens differs to other causes of microbial keratitis, such as contact lens-associated keratitis, and a different management approach is required. Postoperatively, patients are prescribed topical steroids and broad-spectrum topical antibiotics, typically fluoroquinolones. These do not cover unusual organisms, such as fungi, Nocardia, Acanthamoeba and some atypical mycobacteria. In post-laser-assisted in situ keratomileus...

2011-01-01

318

MEND manual; Le manuel NEDEM

Energy requirements for rural development

This poster presentation details the procedure that was followed for the development of the Mine Environment Neutral Drainage (MEND) manual. This manual was developed to provide a detailed summary of the important results obtained through studies sponsored by the MEND program and other studies conducted on topics related to acid mine drainage. The manual was divided into volumes dealing with topics such as summary, sampling and analysis, predictions, prevention and control, treatment, and monitoring. Details concerning the format, research conducted under the auspices of MEND, utilization and limitations, methodology, variations, costs, and references were also discussed. The author stated that the manual is to be used as a guide. The proposed English publication dates for the volumes were indicated, and they ranged from the fall of 2000 for volumes 3, 5, and 6, to the CD-ROM publication in March 2001. The French publication is expected to be ...

2000-07-01

319

Data Mining for Actionable Knowledge: A Survey

This study on the role of energy in the development of rural areas was originally conducted in the spring and summer of 1985. It was intended to serve as a background paper for the preparation of a program plan for the Office of Energy of the United States Agency for International Development. As such it begins with a brief overview of how rural development fits into national development, then offers a comprehensive framework for thinking about rural development in particular and the energy implications of the various components of rural development. Agriculture naturally comes to mind when rural areas are mentioned, but industry is an important component of rural activity as well. Consequently, both agricultural and nonagricultural energy use is discussed. Modernization of rural areas will change household, as well as production, energy use. However, household energy use is a veritable subject in its own right, with a large literature. Consequently, that topic is ...

1988-06-01

320

Computing in high energy physics

The data mining process consists of a series of steps ranging from data cleaning, data selection and transformation, to pattern evaluation and visualization. One of the central problems in data mining is to make the mined patterns or knowledge actionable. Here, the term actionable refers to the mined patterns suggest concrete and profitable actions to the decision-maker. That is, the user can do something to bring direct benefits (increase in profits, reduction in cost, improvement in efficiency, etc.) to the organization's advantage. However, there has been written no comprehensive survey available on this topic. The goal of this paper is to fill the void. In this paper, we first present two frameworks for mining actionable knowledge that are inexplicitly adopted by existing research methods. Then we try to situate some of the research on this topic from two different viewpoints: 1) data mining tasks and 2) adopted framework. Finally, we ...

2005-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

321

Colloquium 10: Regional climate change - hydrology and land-use. Abstracts; Kolloquium 10: Regionaler Klimawandel - Hydrologie und Landnutzung. Zusammenfassungen

This book deals with advanced computing applications in physics, and in particular in high energy physics environments. The main subjects covered are networking; vector and parallel processing; and embedded systems. Also examined are topics such as operating systems, future computer architectures and commercial computer products. The book presents solutions that are foreseen as coping, in the future, with computing problems in experimental and theoretical High Energy Physics. In the experimental environment the large amounts of data to be processed offer special problems on-line as well as off-line. For on-line data reduction, embedded special purpose computers, which are often used for trigger applications are applied. For off-line processing, parallel computers such as emulator farms and the cosmic cube may be employed. The analysis of these topics is therefore a main feature of this volume.

1986-01-01

322

Coastal sediments '91. Volume 1

'Regional climate change: hydrology and land-use' is a topic that is being intensively discussed for quite a while already. At the same time, this topic demands consequences both on the level of politics and other decision makers. We scientists bear a particular responsibility for the analysis of existing data, targeted additional research to fill information gaps, and the critical evaluation and interpretation of the obtained results. The currently gathered sub-population of the scientific community is, albeit small, quite representative of a wide spectrum of activities and can very well offer a deeper insight into the current state-of-the-art. We deliberately organized the contributions such as to offer both overviews and results from detailed projects, as well as a close proximity of very well founded results with rather provocative hypotheses. (orig.)

2005-07-01

323

Class 1E digital systems studies

This volume contains papers delivered at a technical conference of the American Society of Civil Engineers held on June 25-27, 1991 in Seattle, Washington. The conference dealt with the physical aspects of sediment processes in the coastal environment. The papers are presented under three general themes: fundamentals of coastal sediment transport, coastal geologic processes, and engineering applications. The topics of the role of long waves in coastal sediment processes and cross-shore transport are highlighted. Examples of the topics covered include: sediment transport; beach and nearshore sedimentation; shoreline and beach profile changes; longshore and cross-shore transport; storm erosion; inlet sediment processes; gravel transport; coastal structure and sediment interaction; and dredging.

1991-01-01

324

A novel in vitro flat-bed perfusion biofilm model for determining the potential antimicrobial efficacy of topical wound treatments

This document is furnished as part of the effort to develop NRC Class 1E Digital Computer Systems Guidelines which is Task 8 of USAF Rome Laboratories Contract F30602-89-D-0100. The report addresses four major topics, namely, computer programming languages, software design and development, software testing and fault tolerance and fault avoidance. The topics are intended as stepping stones leading to a Draft Regulatory Guide document. As part of this task a small scale survey of software fault avoidance and fault tolerance practices was conducted among vendors of nuclear safety related systems and among agencies that develop software for other applications demanding very high reliability. The findings of the present report are in part based on the survey and in part on review of software literature relating to nuclear and other critical installations, as well as on the authors' experience in these areas.

325

British Library Electronic Table of Contents (United Kingdom)

Abstract Aims: To develop an in vitro flat-bed perfusion biofilm model that could be used to determine the antimicrobial efficacy of topically applied treatments. Methods and Results: Pseudomonas aeruginosa and Staphylococcus aureus biofilms were grown within continuously perfused cellulose matrices. Enumeration of the biofilm density and eluate was performed at various sampling times, enabling determination of the biofilm growth rate. Two antimicrobial wound dressings were applied to the surface of mature biofilms and periodically sampled. To enable real-time imaging of biofilm growth and potential antimicrobial kinetics, a bioluminescent Ps. aeruginosa biofilm was monitored using low-light photometry. Target species produced reproducible steady-state biofilms at a density of c. 107 per b...

2009-01-01

326

Synthesis of Si nanowires for MEMS cantilever sensor applications

Studies of dynamic contact of ceramics and alloys for advanced heat engines: Final report

We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the ...

2004-12-01

327

Novel silicon fabrication process for high-aspect-ratio micromachined parts

In support of the efforts to apply ceramics in advanced heat engines, a study was made of the sliding performance of ceramics at the ring/cylinder interface of low heat rejection engines. The objective was to understand the basic mechanisms controlling the wear of candidate ceramics and thereby identify means for applying these ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and several plasma-sprayed ceramic coatings without lubrication were unsuccessful because of high friction and high wear rates. Experiments using a polyalphaolefin lubricant at temperatures to 260 C identified several combinations having wear rates in the general range likely to be acceptable for engines. Plasma-sprayed coatings of chromium oxide and hypersonic powder flame sprayed coatings of cobalt-bonded tungsten carbide performed particularly well as ring coatings. Similar performance was obtained with these ring ...

1988-03-01

328

Visco-elastic energy dissipation in a SiAlON ceramic: Quantification and implications for fatigue resistance

Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...

1995-08-01

329

Ultrathin coatings of nanoporous materials as property enhancements for advanced functional materials

In this letter a method to estimate the visco-elastic response of monolithic ceramics to cyclic loading conditions at high temperatures is proposed. A relation is observed between the visco-elastic energy dissipation measured for two silicon nitride materials, and the structural characteristics of their respective intergranular phases. Some consequences for the fatigue resistance of the tested materials, and of non-transforming monolithic ceramics in general, are discussed. Two batches (G for glassy and C for crystalline) of SiAlON have been studied. The G-batch is obtained by pressureless sintering of silicon nitride powder with Y_2O_3 (6 wt%) and 6AlN-SiO_2 (5 wt%) as sintering additives. The main phase after sintering is #beta#-sialon. Upon cooling from the sintering temperature the amorphous intergranular residues of the sintering additives and of SiO_2, which is unavoidably present as a thin layer on the silicon ...

330

Turning the Moon into a Solar Photovoltaic Paradise

This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials on ...

331

Temperature dependence of a twofold magnetic behaviour of a nanoscopic metal/silicon hybrid system - a comparison between Ni/Si and Co/Si

Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and ...

2006-01-01

332

TIARA: A large solid angle silicon array for direct reaction studies with radioactive beams

The investigated hybrid nanocomposite consists of a porous silicon template with electrochemically embedded Ni or Co nanostructures and offers magnetic characteristics which can be tailored by the electrochemical process parameters during fabrication. A twofold magnetic behaviour can be observed, a first one due to the spinmagnetism at magnetic fields below the saturation magnetization of the deposited metals and a second non-saturating term at higher fields (>1 T up to 7 T) above the saturation magnetization. In case of Ni deposited within the pores this non-saturating term shows a paramagnetic characteristic and follows exactly the Curie-Weiss law, whereas for Co/porous silicon samples the temperature dependent magnetization shows some deviations from the Curie Weiss law. In this high field region a difference in the temperature dependence between Ni and Co is observed whereas the non-saturating term does not depend on the geometry of ...

2009-10-15

333

Single-pulse excimer laser nanostructuring of silicon: A heat transfer problem and surface morphology

A compact, quasi-4? position sensitive silicon array, TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the ?-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The 14N(d,p)15N reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the 15N ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA calculations. Transferred l-values are in very good agreement ...

2010-03-11

334

Quality Management for Neutron Transmutation Doping of Silicon Ingot in HANARO

We present computer modeling along with experimental data on the formation of sharp conical tips on silicon-based three-layer structures that consist of a single-crystal Si layer on a 1 {mu}m layer of silica on a bulk Si substrate. The upper Si layers with thicknesses in the range of 0.8-4.1 {mu}m were irradiated by single pulses from a KrF excimer laser focused onto a spot several micrometers in diameter. The computer simulation includes two-dimensional time-dependent heat transfer and phase transformations in Si films that result from the laser irradiation (the Stefan problem). After the laser pulse, the molten material self-cools and resolidifies, forming a sharp conical structure, the height of which can exceed 1 {mu}m depending on the irradiation conditions. We also performed computer simulations for experiments involving single-pulse irradiation of bulk silicon, reported by other groups. We discuss conditions under which different types ...

2008-05-01

335

Proposal to negotiate an amendment to an existing contract for the supply of thick 6 inch silicon micro-strip sensors for the CMS tracker

By using this doping method, silicon semiconductors with extremely uniform dopant distributions can be produced, and this is the dominant advantage of NTD compared with a conventional chemical doping. Good uniformity of a dopant concentration is usually required for high power applications such as thyristor (SCR), IGBT, IGCT and GTO and for special sensors. Achieving an accurate neutron fluence corresponding to a target resistivity as well as a uniform irradiation is the prime target of a neutron irradiation for NTD. Generally, in order to reach an accurate neutron fluence, a real time neutron flux is monitored by a neutron detector such as a Self-powered Neutron Detector(SPND). And, after an irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of a neutron activation sample that has been irradiated with a silicon ingot, and thus the SPND can be properly calibrated. Excellent irradiation uniformity and a ...

2007-10-15

336

Process model for carbothermic production of silicon metal

This document concerns the proposal to negotiate an amendment to an existing contract for the supply of thick 6 inch silicon micro-strip sensors for the CMS tracker. For the reasons explained in this document, the Finance Committee is invited to approve an amendment to an existing contract with HAMAMATSU PHOTONICS (CH) for the supply of 7 000 thick 6 inch silicon micro-strip sensors for the CMS tracker, for an amount of 3 248 000 euros (5 131 840 Swiss francs), not subject to revision, with an option for up to 11 000 additional sensors, for a maximum amount of 4 708 000 euros (7 438 640 Swiss francs), not subject to revision, bringing the total maximum amount of the amendment to 7 956 000 euros (12 570 480 Swiss francs) not subject to revision. This total maximum amount will be added to the initial contract amount of 415 835 000 Japanese yen (4 879 824 Swiss francs), not subject to revision. The amounts in Swiss francs have been calculated ...

2004-01-01

337

Neutronic aspects of the safety and environmental performance of silicon carbide as blanket structural material

This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid flow fields etc, are ...

1995-09-12

338

Modeling key cupola reactions: Behavior of carbon, silicon and manganese

Safety and environmental assessments have been made of conceptual fusion power plant designs employing silicon carbide composites (SiC/SiC) as the first wall and blanket structure material. These have used similar analysis methods to earlier studies of designs based on vanadium alloy or low-activation martensitic steel, allowing direct comparisons. The very low short-term activation of silicon carbide results in an almost insignificant level of decay heat in postulated loss of coolant accidents, and a lower {gamma}-dose rate on the timescale of relevance to handling for maintenance operations. However on the longer time-scale, of interest in possible recycling operations, decommissioning and waste management, SiC/SiC appears to perform no better than vanadium alloy or low-activation martensitic steel, due in part to the activation of impurities in a realistic composition. Furthermore, its increased neutron transparency may result in higher ...

2001-04-01

339

Mechanism for transient-enhanced diffusion in ion-implanted silicon

In the present study, models of key chemical processes governing the compositions of the tapped metal from the cupola on the basis of physico-chemical fundamentals have been developed. As evident from the literature survey, the investigations conducted in the past have focused their attention on one phenomenon at a time; for example, a particular chemical reaction, measurement of gas composition or the temperature distribution inside a cupola. Notwithstanding the importance of these studies and their contribution toward the understanding of cupola operation, mathematical models of key chemical processes and their interdependence must be investigated to obtain a complete insight into the various interlinked phenomena occurring inside a cupola. For example, the oxidation of the metallic charge leads to the formation of iron oxide which influences the final content of elements such as silicon, manganese and carbon. The processes considered in this study are oxidation ...

1991-01-01

340

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients as a function of concentration. Diffusion ...

1985-03-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

341

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}

1999-03-01

342

Investigation of texturization for crystalline silicon solar cells with sodium carbonate solutions

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.

1999-03-01

343

Integration of fiber coupled high-Q silicon nitride microdisks with magnetostatic atom chips

We investigate a new texturization technique for crystalline silicon solar cells with sodium carbonate (Na{sub 2}CO{sub 3}) solutions. We show the dependence of the hemispherical surface reflectance on solution temperature, the etching time and the Na{sub 2}CO{sub 3} concentration. Furthermore, we investigate what element in Na{sub 2}CO{sub 3} solution influences the texturing for reducing the texturing time. As a result of experiments, we find it possible to get low reflectance in a shorter texturing time by the addition of NaHCO{sub 3}. The size of texture becomes smaller by the addition of NaHCO{sub 3} but the etching rate does not change. We conclude carbonic ion and/or its compound seems to play an important role as the initiator of pyramidal structure. This texturing method is cost effective because there is no need of expensive IPA, and the surface reflectance is reduced sufficiently in a short time. This method is promising for a large-scale production of ...

2000-04-01

344

Influence of microstructural characteristics on the mechanical properties of silicon nitride with Al{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} as sintering aids

Micron scale silicon nitride (SiNx) microdisk optical resonators fabricated on a silicon wafer are demonstrated with Q = 3.6 x 10^6 (finesse = 5 x 10^4) and an effective mode volume of 15 (\\lambda / n)^3 at wavelengths \\lambda ~ 852 nm resonant with the D2 transition manifold of cesium. A dilute hydrofluoric wet etch is shown to provide sensitive tuning of the microdisk optical resonances, and robust mounting of a fiber taper provides efficient fiber optic coupling to the SiNx microdisk cavities while allowing unfettered optical access for laser cooling and trapping of atoms. Initial measurement of a hybrid atom-cavity chip indicates that cesium adsorption on the surface of the SiNx microdisks results in significant red-detuning of the disk resonances. A technique for parallel integration of multiple (10) microdisks with a single optical fiber taper is also demonstrated.

2006-01-01

345

Influence of metallurgical factors on corrosion and electrochemical behavior of structural materials

Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized by high aspect ratio.-Si{sub 3}N{sub 4} ...

2003-07-01

346

Influence of metallurgical factors on corrosion and electrochemical behavior of structural materials

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO/sub 2/. As shown by the investigations of a study of the anodic behavior of Fe/sub 40/Ni/sub 40/P/sub 14/B/sub 6/ and Fe/sub 40/Ni/sub 38/Mo/sub 4/B/sub 18/, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but ...

1986-07-01

347

Gate-oxide integrity for polysilicon thin-film transistors: a comparative study for ELC, MILC and SPC crystallized active polysilicon layer

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO_2. As shown by the investigations of a study of the anodic behavior of Fe_4_0Ni_4_0P_1_4B_6 and Fe_4_0Ni_3_8Mo_4B_1_8, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but without the boron. The authors note that ...

1986-01-01

348

Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si films are the main factors that ...

2006-01-01

349

Electrical properties of ultra-thin oxynitrided layer using N{sub 2}O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass

The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si{sup +}, 1 {times} 10{sup 16}/cm{sup 2}, implant. A 4{times} larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10{times} smaller diffusion relative to markers without the MeV Si{sup +} implant. This data demonstrates that a 2 MeV Si{sup +} implant injects vacancies into the near surface region.

1997-04-01

350

Electrical properties of ultra-thin oxynitrided layer using N_2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...

2007-06-04

351

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...

2007-06-04

352

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.

2004-02-01

353

Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

2004-02-01

354

Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter extractions have ...

2004-02-01

355

Deposition of plasma-polymerized hydroxyethyl methacrylate (HEMA) on silicon in presence of argon plasma

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter ...

2004-02-01

356

Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation

2-hydroxyethyl methacrylate (HEMA) has been deposited onto the surface of silicon substrate (thickness = 500 ?m) using plasma polymerization technique. Polymerization process was carried out in an in-house developed inductively coupled plasma polymerization setup. The depositions were carried out using RF power supply (13.56 MHz) at power of 75 W for 10 and 40 min. The RF supply was coupled to the inductance through a matching network. The effect of plasma polymerization (surface grafting) on the degree of surface modification has been investigated. The chemical changes on the polymer backbone are followed from the results of Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), which show the peaks corresponding to the functional groups of the HEMA polymerized onto the silicon surface. The morphology of the modified surfaces has also been investigated using scanning electron microscopy (SEM) and atomic ...

2005-05-30

357

Conversion of a plasma enhanced chemical vapor deposited silicon-carbon-nitride thin film at ultra-low temperature by oxygen plasma

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...

1989-03-01

358

Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties

In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical analysis by X-ray photoelectron spectroscopy is reported for both the ...

2008-01-30

359

Characterization of 3D thermal neutron semiconductor detectors

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO_x) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO_x shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO_x nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO_x shell acts as an effective insulating layer. The ZnTe-SiO_x nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

2009-11-11

360

Annealing and diffusion characteristics of boron-through-oxide implanted silicon

Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties of 3D structures. Charge collection ...

2007-06-11

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

361

Annealing and diffusion characteristics of boron-through-oxide implanted silicon

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the ...

1991-01-01

362

A detailed physical model for ion implant induced damage in silicon

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced ...

363

A detailed physical model for ion implant induced damage in silicon

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated ...

1998-06-01

364

Solid state diffusion in metal silicides

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the ...

1998-06-01

365

uv photobiology: postreplication repair. [Escherichia coli, synchrotron radiation

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach ...

366

X ICSMFE: Tenth international conference on soil mechanics and foundation engineering. Vol. 2

The following topics are discussed: insertion of incorrect bases in DNA; ability of DNA polymerase to copy uv-irradiated DNA; role of enzymes in repair of DNA; effects of uv radiation on molecular weight of DNA; photoreactivation; repair of DNA in Escherichia coli and xp cells following uv radiation; and synchrotron radiation studies on DNA repair. (HLW)

1978-01-01

367

Waste management at Los Alamos: Protecting our environment

Topics covered in this volume include soil-structure interactions, environmental control (including waste materials), soil exploration and sampling, and pile foundations. Four papers on the use of fly ash from coal combustion as a construction material have been abstracted separately.

1981-01-01

368

Topically administered timolol and dorzolamide reduce intraocular pressure and protect retinal ganglion cells in a rat experimental glaucoma model

This report consists of a broad overview of activities at Los Alamos National Laboratory (LANL). The following topics are discussed: The growth of the waste management group; what we do today; the mission of the waste management group; the liquid waste treatment section; the radioactive liquid waste project office; the chemical waste section; the radioactive waste section; and the technical support section.

1993-11-01

369

Third SEI Technical Interchange: Proceedings. [Space Exploration Initiative

Aims: This study sought to elucidate the effects of timolol and dorzolamide on intraocular pressure (IOP) and retinal ganglion cell (RGC) death in an experimental...Full Text Available

2005-04-01

370

Theory of chemical reaction dynamics. Volume 1

Given here are the proceedings of the 3rd Space Exploration Initiative (SEI) Technical Interchange. Topics covered include the First Lunar Outpost (FLO), the Lunar Resource Mapper, lunar rovers, lunar habitat concepts, lunar shelter construction analysis, thermoelectric nuclear power systems for SEI, cryogenic storage, a space network for lunar communications, the moon as a solar power satellite, and off-the-shelf avionics for future SEI missions.

1992-01-01

371

Theoretical Physics Divison progress report

This book examines some of the basic principles behind chemical reactions kinetics. Topics considered include ab initio determination of potential energy for chemical reactions; semi-empirical potential energy surfaces; general theory of reactive scattering: different equation approach; and integral equation approach to reactive scattering.

1985-01-01

372

The proton microprobe: Applications in the biomedical field

The progress report for the Theoretical Physics Division of the United Kingdom Atomic Energy Authority, Harwell, 1985/6 is presented. The Division's research programme is divided into four sections - i) nuclear power (fuels, inspection and safety aspects), ii) radioactive waste management, iii) underlying research, and iv) non-nuclear contract research. The report contains a description of the research work carried out on these four topics in the above period. (U.K.).

373

The issues in electronics hardening

This book explores the development, present, and future applications of proton microprobes in the micrometer range. Among the topics discussed: the use of proton beams for analytical purposes; techniques of focusing or collimating ion beams; improving and measuring beam spots; the analytical capabilities of the nuclear microprobe in comparison to other micro techniques; and applications and results by several internationally known microprobe laboratories.

1986-01-01

374

The evolution of x-ray binaries

This paper addresses the background and the continuously evolving topics of hardening and electronic components. Typical radiation environments from 1960 are described. Examples of a civilian satellite and of future particle physics colliders help illustrate hardening problems. Effects in components, limits of shielding, and three methods of providing components are described. The authors conclude by focusing on both future trends of radiation environments and anticipated progress in electronics. (authors). 10 refs., 9 figs., 4 tabs.

375

The electric power industry in Czechoslovakia - development and present state. Entwicklung und gegenwaertiger Stand der tschechoslowakischen Elektrizitaetswirtschaft

These proceedings represent papers presented at the Astrophysics Conference in Maryland, USA. The topic of the Conference was the evolution of x-ray binaries and the papers encompass a wide range of subjects on x-ray astronomy. There were one hundred eighteen papers presented at the Conference and out of these three have been abstracted for the Energy Science and Technology database.

1993-10-11

376

Tap cogen-plant steam for process, NO[sub x] control

Some general topical information (generating capacity and electric power generation, development and structure of electric power consumption, frequency and peak load, exchange of electricity) is followed by an account of the situation of coal-fired power plants, hydroelectric power plants and nuclear power plants, and a brief discussion of the environmental situation (emissions and wastes, immissions, and air pollution abatement measures for power plants). (orig./UA).

1992-11-02

377

Stable isotopes in plant nutrition, soil fertility and environmental studies

This article describes the Monsanto's Indian Orchard plant gas-fired, combined-cycle cogeneration facility in Springfield, Massachusetts. The topics of the article include project configuration, the thermodynamic cycle, fuel selection, electrical distribution system, plant control, and air pollution control of NO[sub X], SO[sub 2], CO, particulates, non-methane hydrocarbons, opacity and ammonia.

1993-04-01

378

Sputter coating of tantalum and tantalum compounds. (Latest citations from the Compendex database). Published Search

The individual contributions in these proceedings are indexed separately. Main topics covered include the measurement of biological nitrogen fixation, studies of soil organic matter, investigations of nutrient uptake and use by plants, studies of plant metabolism and new methodologies in the analysis of stable isotopes. Refs, figs and tabs.

1990-10-01

379

Slimholes for geothermal reservoir evaluation - An overview

The bibliography contains citations concerning the properties of tantalum and tantalum compound films formed by sputtering techniques. Topics include processes, and electrical, magnetic, and dielectric properties of the sputtered films. Tantalum compounds studied include nitrates, oxides, and aluminides. The structural properties of sputtered films are also discussed. (Contains a minimum of 105 citations and includes a subject term index and title list.)

1993-06-01

380

Second international seminar of horizontal steam generator modelling

The topics covered in this session include: slimhole testing and data acquisition, theoretical and numerical models for slimholes, and an overview of the analysis of slimhole data acquired by the Japanese. The fundamental issues discussed are concerned with assessing the efficacy of slimhole testing for the evaluation of geothermal reservoirs. the term reservoir evaluation is here taken to mean the assessment of the potential of the geothermal reservoir for the profitable production of electrical power. As an introduction to the subsequent presentations and discussions, a brief summary of the more important aspects of the use of slimholes in reservoir evaluation is given.

1996-08-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

381

Research in heavy-ion nuclear physics. Annual progress report, May 1, 1991--April 30, 1992

The Second International Seminar on Horizontal Steam Generator Modelling was arranged to continue the international cooperation that was started during the first seminar in March 1991. The main topics of the seminar were: (1) further experimental results on horizontal steam generator behaviour, (2) resent developments in modelling, (3) results on analyses and studies on primary-to-secondary side leakages, and (4) results of the common exercise calculations.

1993-12-31

382

Report on the special program 78 satellite geodesy of the technical university of Munich

This report discusses the following topics: Fusion-fission in light nuclear systems; High-resolution Q-value measurement for the {sup 24}Mg+{sup 24}Mg reaction; Heavy-ion reactions and limits to fusion; and Hybrid MWPC-Bragg curve detector development.

1992-01-01

383

Renewable resources - prospects for the chemicals industry

Various topics include: (1) direction finding, (2) range finding, (3) Doppler measurements, (4) construction of a receiver for radio interferometry, (5) mobile laser range finding system, (6) figure-and field parameter determination/geopotential, (7) dynamics of the Earth-Moon system, and (8) kinematics of geodetic point fields.

1981-01-01

384

Remote sensing for environmental monitoring and resource management. Volume 2

Improved boundary conditions for the cultivation and utilization of renewable feedstocks in Europe as well as advances in the manufacture and use of intermediate products, special and fine chemicals, and new materials on this basis were the topics of a second symposium, organized this time by Hoechst AG, together with the federal ministry of food, agriculture and forestry, in Frankfurt-Hoechst on May 5th and 6th. With more than 300 attendants from the sectors politics, farming, industry, science and administration, the meeting again encountered great interest. (orig.).

385

Radioanalytical chemistry. Vol. 2

The subject of this volume is remote sensing for environmental monitoring and resource management. This session is divided in eight parts. First part is on general topics, methodology and meteorology. Second part is on geology, environment and land cover. Third part is on disaster monitoring. Fourth part is on operational status of remote sensing. Fifth part is on coastal zones and inland waters. Sixth and seventh parts are on forestry and agriculture. Eighth part is on instrumentation and systems. (A.B.). refs., figs., tabs.

1992-12-31

386

This volume of the monograph covers the following topics: activation analysis, non-activation interaction analysis (elastic scattering of charged particles, absorption and backscattering of beta radiation and photons, radionuclide X-ray fluorescence analysis, thermalization, scattering and absorption of neutrons, use of ionization caused by nuclear radiation, use of ionization by alpha or beta radiation for the measurement of pressure, density and flow rate of gases), and automation in radioanalytical chemistry. (P.A.).

1989-01-01

387

Progress in lattice QCD

Producing Open Source Software How to Run a Successful Free Software Project

After reviewing some of the mathematical foundations and numerical difficulties facing lattice QCD, I review the status of several calculations relevant to experimental high-energy physics. The topics considered are moments of structure functions, which may prove relevant to search for new phenomena at the LHC, and several aspects of flavor physics, which are relevant to understanding CP and flavor violation.

2002-09-30

388

Proceedings, third international symposium on mine mechanization and automation

This comprehensive guide offers several tried and true steps to help you successfully manage the complex process of developing free software. Topics include project management, developer motivation, technical infrastructure to support collaboration, and project promotion. Producing Open Source Software is ideal for developers starting their own free software projects, or people who simply want to participate in the process.

2009-01-01

389

Proceedings of the twelfth international conference, applied geologic remote sensing. Practical solutions for real-world problems

Papers are presented under the following topics: machine control and automation; rock drilling; cutting and fragmentation; rock characterization, remote sensing and interface detection; artificial intelligence and mine monitoring systems; computer applications; mechanical excavators; material handling; surface and underground mining; innovative mining systems; new developments in mechanical miners; ground hazard detection and control; ground support; and extraterrestrial mining.

1995-12-31

390

Proceedings of the tenth annual DOE low-level waste management conference: Session 1: Institutional and regulatory issues

The topics covered at the conference include: mineral exploration; geological mapping/stratigraphy; environmental monitoring and hydrology; petroleum exploration; radar digital elevation mapping; new commercial remote sensing initiatives; geological hazards and engineering; processing and integration techniques; and hyperspectral geology.

1997-12-31

391

Proceedings of the 1st ACM international conference on digital libraries

This document contains eleven papers on various aspects of low-level radioactive waste regulation. Topics include: EPA environmental standards; international exemption principles; the concept of below regulatory concern; envirocare activities in Utah; mixed waste; FUSRAP and the Superfund; and a review of various incentive programs. Individual papers are processed separately for the data base. (TEM)

1988-12-01

392

Powder metallurgical high performance materials. Proceedings. Volume 3: general topics

This document contains papers which were presented at the First ACM International Conference on Digital Libraries. Topics processed for this document included information retrieval and index structures for structured documents. Individual papers have been processed separately for the United States Department of Energy databases.

1996-12-31

393

Pollution control instrumentation for oil and effluents

The proceedings of these seminars form an impressive chronicle of the continued progress in the understanding of refractory metals and cemented carbides and in their manufacture and application. The 15"t"h Plansee Seminar was convened under the general theme 'Powder Metallurgy High Performance Materials'. Under this broadened perspective the seminar will strive to look beyond the refractory metals and cemented carbides, which remain at its focus, to novel classes of materials, such as intermetallic compounds, with potential for high temperature applications. (boteke)

2001-05-01

394

Offshore and arctic operations symposium - 1987

This book provides discusses recent developments in oil pollution control instrumentation. Some of the topics covered are as follows: 1. Technical requirements of the IMCO International Performance and Test Specification A393x concerning oil content meters; and 2. Oil in water detection; and 3. Methods for the disposal of recovered oil and oily sludge; and 4. Oil content monitoring at ballast water treatment facilities and offshore production platforms.

1986-01-01

395

Oceans 82 conference record: Industry, government, education. partners in progress

This book presents the papers given at a conference on offshore platforms. Topics considered in this book include risk assessment, crack propagation, fracture control, stress corrosion, the reliability of pile foundations, the thermal conductivity of offshore pipeline coating material, economic analysis, hydrodynamics, simulation, Arctic structure design, composite materials, buoys, deep water drilling, corrosion protection, pollution control equipment, and subsea exhaust gas compressors.

1987-01-01

396

Separate abstracts were prepared for 20 papers in this conference report and includes all papers in the ''engineering'' section (program E). Ocean thermal energy conversion (OTEC), moorings, cables, corrosion protection, corrosion testing, coatings, offshore platforms, pipelines, OTEC models and pilot plants, and energy transfer are topics discussed.

1982-01-01

397

ORNL `90

This overview of research conducted at ORNL in 1991 presents information on the subjects of biology, physics, and the environment. Specific topics include gene mutations in kidney disease, technology assessments in thermonuclear fusion, submarine hunting technology, ozone-safe refrigerants, optical data storage via surface enhanced raman spectroscopy, and waste mitigating microbes. (GHH)

1990-12-31

398

ORNL '90

New technologies in fossil-fuel utilization

This overview of research conducted at ORNL in 1991 presents information on the subjects of biology, physics, and the environment. Specific topics include gene mutations in kidney disease, technology assessments in thermonuclear fusion, submarine hunting technology, ozone-safe refrigerants, optical data storage via surface enhanced raman spectroscopy, and waste mitigating microbes. (GHH)

1990-01-01

399

Nanocrystalline materials: Interfaces and mesoscopic correlations studied by neutron scattering

This document contains the outline and viewgraphs used in the speech. Topics covered are: conventional oil and gas recovery; unconventional oil and gas sources; oil shale resources; conventional coal combustion; advanced fossil power systems; fluidized bed combustion; coal/oil or coal/water mixtures; and gaseous and liquid fuels from coal. (DMC)

1982-01-01

400

Nanocrystalline materials can exhibit properties which are considerably different from their coarse-grained counterparts, making them unique for basic or applied research and also very promising for potential applications. The topics which are addressed in the present paper are magnetic properties and magnetic correlations on the nanometer scale, mechanical properties, in particular the influence of grain boundaries on the elastic and plastic behaviour, and vibration models of grain boundary atoms in nanostructured materials. (author)

2001-09-23

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

401

NAME=\\

...INFORMATION Diarrhoeal disease Food safety and foodborne illness Enterohaemorrhagic Escherichia coli (EHEC) Cholera WHO PROGRAMMES AND ACTIVITIES Child and Adolescent Health and Development (...FOS) Initiative for Vaccine Research (IVR) TECHNICAL INFORMATION Vaccine research: diarrhoeal diseases Cholera Water-related diseases Household water treatment and safe storage WHO Global Salm-Surv ...PUBLICATIONS Diarrhoea: child and adolescent health Diarrhoea: cholera RELATED TOPICS - Child health - Water - Food safety - Cholera - Travel - Breastfeeding ...

402

NAME=\\

Massive Stars in the Local Group: Star Formation and Stellar Evolution

... Based in the Philippines, it has a broad remit, covering all philosophical topics, but with a particular focus on analytic ...net/ Cultura is a Romanian-based international journal devoted to philosophy of culture and axiology (the study of value). It aims ...edu/ Aporia is an online undergraduate philosophy journal based at Brigham Young University in Utah, USA. All articles are written by undergraduates,...edu/pcs/basic.html Theoretical and Conceptual Advances in the Cognitive Neuroscience of Self Representation: Representations of the Minimal Self in Self-Narrative is ...

403

Lidar techniques for search and rescue

The galaxies of the Local Group that are currently forming stars can serve as our laboratories for understanding star formation and the evolution of massive stars. In this talk I will summarize what I think we've learned about these topics over the past few decades of research, and briefly mention what I think needs to happen next.

2003-01-01

404

InConference : oil and gas sector

Four techniques for using LIDAR in Search and Rescue Operations will be discussed. The topic will include laser retroreflection, laser-induced fluorescence in the visible, laser-induced fluorescence during daylight hours, and laser-induced fluorescence in the uv. These techniques use high-repetition rate lasers at a variety of frequencies to induce either fluorescence in dye markers or retroreflection from plastic corner cubes on life preservers and other emergency markers.

1985-01-01

405

INL Advanced Radiotherapy Research Program Annual Report 2004

This Insight conference was held to review many of the legal aspects, legislation and regulations dealing with abandoned wells within the petroleum and natural gas industry. Remedial actions to rehabilitate the abandoned sites, legal issues in abandonment, obligations of the owner, the industry-sponsored Orphans Wells Program, were some of the topics discussed.

1997-04-21

406

INEEL Advanced Radiotherapy Research Program Annual Report for 2002

This report summarizes the activities and major accomplishments for the Idaho National Laboratory Advanced Radiotherapy Research Program for calendar year 2004. Topics covered include boron analysis in biological samples, computational dosimetry and treatment planning software development, medical neutron source development and characterization, and collaborative dosimetry studies at the RA-1 facility in Buenos Aires, Argentina.

2005-06-01

407

INEEL Advanced Radiotherapy Research Program Annual Report 2002

This report summarizes the activities and major accomplishments for the Idaho National Engineering and Environmental Laboratory (INEEL) Advanced Radiotherapy Research Program for calendar year 2002. Topics covered include computational dosimetry and treatment planning software development, medical neutron source development and characterization, and boron analytical chemistry.

2003-05-01

408

IAEA Co-ordinated Research Program (CRP)

This report summarizes the activities and major accomplishments for the Idaho National Engineering and Environmental Laboratory (INEEL) Advanced Radiotherapy Research Program for calendar year 2002. Topics covered include computational dosimetry and treatment planning software development, medical neutron source development and characterization, and boron analytical chemistry.

2003-05-23

409

Hybridization with synthetic oligonucleotides

The Coordinated Research Project is a topical collection of research agreements and contracts. The research contracts are awarded with financial support of about 10-20% of the total contract cost. Among the activities of the project is the organization of consultant group meetings and workshops involving several international experts and representatives of users and developers of border radiation monitoring equipment. The project also supports in coordinating the development of equipment and techniques for up-to-date border monitoring and in establishing of a process for providing nuclear forensics support to member states

2010-05-19

410

High Performance Electrical Modeling and Simulation Verification Test Suite - Tier I; TOPICAL

Procedures are described for the use of synthetic oligonucleotides for Southern blot experiments and gene bank screening, and the effect of various mismatches on the efficiency of hybridization is demonstrated. The following topics are discussed: sensitivity vs. specificity, hybridization of a 12-mer to the lambda endolysin gene; hybridization of oligonucleotide probes to the E. coli lac operator; hybridization of synthetic probes to the CYC1 gene of yeast; and cloning eucaryotic genes. (HLW)

1978-01-01

411

High Energy Physics Division semiannual report of research activities, July 1, 1992--December 30, 1992

This document describes the High Performance Electrical Modeling and Simulation (HPEMS) Global Verification Test Suite (VERTS). The VERTS is a regression test suite used for verification of the electrical circuit simulation codes currently being developed by the HPEMS code development team. This document contains descriptions of the Tier I test cases.

2001-12-01

412

High Energy Physics Division semiannual report of research activities, January 1, 1993--June 30, 1993

This report describes the research conducted in the High Energy Physics Division of Argonne National Laboratory during the period of July 1, 1992--December 30, 1992. Topics covered here include experimental and theoretical particle physics, advanced accelerator physics, detector development, and experimental facilities research. Lists of division publications and colloquia are included.

1993-07-01

413

Geothermal program review 16: Proceedings. A strategic plan for geothermal research

This report describes the research conducted in the High Energy Physics Division of Argonne National Laboratory during the period of January 1, 1993--June 30, 1993. Topics covered here include experimental and theoretical particle physics, advanced accelerator physics, detector development, and experimental facilities research. Lists of division publications and colloquia are included.

1993-12-01

414

Fundamental aspects of gas-liquid flows

The proceedings contain 21 papers arranged under the following topical sections: Exploration technology (4 papers); Reservoir technology (5 papers); Energy conversion technology (8 papers); Drilling technology (2 papers); and Direct use and geothermal heat pump technology (2 papers). An additional section contains a report on a workshop on dual-use technologies for hydrothermal and advanced geothermal reservoirs.

1998-12-31

415

Fundamental aspects of gas-liquid flows

This book presents the papers given at a conference on two-phase flow. Topics considered at the conference included the thermal hydraulics of a feedwater pipe breakage, pressure losses, measurement of void fraction in a rod bundle, laminar filmwise condensation, natural circulation, flow models, bubble dynamics, cavitation, water hammer, and heat transfer augmentation.

1985-01-01

416

This book presents the papers given at a conference on two-phase flow. Topics considered at the conference included the thermal hydraulics of a feedwater pipe breakage, pressure losses, measurement of void fraction in a rod bundle, laminar filmwise condensation, natural circulation, flow models, bubble dynamics, cavitation, water hammer, and heat transfer augmentation.

1985-11-17

417

Free-electron lasers and related topics

The author draws the connections between the work he has done over the last ten years and related research. Connections with industry are also mentioned, and future prospects are considered. Topics discussed include research into the synthesis of olefins and into liquid phase oxidation, the catalytic effects of transition metal compounds, and coal liquefaction. (35 refs.) (In Japanese)

1982-01-01

418

Forschungszentrum Juelich, Institut fuer Kernphysik. Annual report 1994

This past year has been very exciting for the experimental free-electron laser (FEL) programs. At three Laboratories, oscillator experiments were performed with wavelengths from the visible to far infrared. The output powers are steadily advancing. The status of these programs will be discussed. As shorter wavelengths and higher powers are pursued, higher currents with improved beam quality will be required. Advanced electron linacs should be developed to meet these demands. 13 references, 5 figures, 3 tables.

1984-01-01

419

Formation and Evolution of Bulges

This volume contains the annual report describing the work carried out at COSY (Cooled Synchrotron Storage Ring at KFA Juelich). The results in both machine and physics program are presented on the main topics experimental nuclear physics, theoretical nuclear physics, accelerator developments and technical developments. (MSA)

1995-02-01

420

Federal Facilities Compliance Act, Draft Site Treatment Plan: Compliance Plan Volume. Part 2, Volume 2

After presenting three ways of defining a bulge component in disc galaxies, we introduce the various types of bulges, namely the classical bulges, the boxy/peanut bulges and the disc-like bulges. We then discuss three specific topics linked to bulge formation and evolution, namely the coupled time evolution of the bar, buckling and peanut strengths; the effect of velocity anisotropy on peanut formation; and bulge formation via bar destruction.

2007-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

421

Explore - The Lab - Australian Broadcasting Corporation's Gateway to Science

This document presents the details of the implementation of the Site Treatment Plan developed by Ames Laboratory in compliance with the Federal Facilities Compliance Act. Topics discussed in this document include: implementation of the plan; milestones; annual updates to the plan; inclusion of new waste streams; modifications of the plan; funding considerations; low-level mixed waste treatment plan and schedules; and TRU mixed waste streams.

1994-08-31

422

Environmental effects and energy efficiency in building design - a green building approach. Pt. 2. Basic data for environmental effects

...Explore - The Lab - Australian Broadcasting Corporation's Gateway to Science Radio TV Shop News Sport Local Children Science Environment more Topics help Science Home News in Science Features Explore TV & Radio Dr Karl Play Podcasts DNA - The discovery of the double helix structure of DNA completely changed biology and opened up the new field of genetics. The 'backbone of life' has given us the human genome, stem cell research, ...

423

Environmental effects and energy efficiency in building design - a green building approach. Pt. 1. Energy efficiency techniques

A research report presents the basic data required when designing a building with minimal environmental impacts. Topics covered include the energy consumption of building elements during their lifetime, the environmental implications linked to the extraction and processing of building material and the energy consumed in buildings by the occupants. (UK)

1993-12-31

424

Entering the Canadian mainstream. [The independent energy market in Canada

A research report describes the energy efficiency techniques to be employed in designing a building which is ``green``. Topics covered include building fabric performance, ventilation and infiltration, passive solar design, heating systems and controls, hot and cold water provision, lighting and electrical appliances. (UK)

1993-12-31

425

Enhanced Control of Mercury by Wet Flue Gas Desulfurization Systems Site 3 Topical Report.

This article examines the developing market for independent power projects in Canada. The topics of the article include bidding in Ontario, the Quebec market, powering British Columbia, and market forces at work in Canada. Discussed are current projects in all stages of completion from bidding to production and includes gas-fired cogeneration, gas-fired combined-cycle electricity generation and cogeneration, wood-waste fired plants, repowering of existing utility plants, and hydroelectric power plants.

1992-04-01

426

Engineering health and safety in coal mining

The U.S. Department of Energy and EPRI have co-funded this project to improve the control of mercury emissions from coal-fired power plants equipped with wet flue gas desulfurization (FGD) systems. The project investigated catalytic oxidation of vapor-pha...

2004-01-01

427

Efficiency of selective IR multiphoton dissociation of molecules in a pulsed gas-dynamic flow interacting with a solid surface

This book presents the papers given at a symposium on occupational safety in coal mines. Topics considered at the symposium included human factors, causes and prevention of personal injuries, remote sensing for ground control, respirable dust generation by continuous miners, accident analysis, hazard analysis of mining equipment, coal mine blasting accidents, coal mine respirable dust sampling, and noise in the mining industry.

1986-01-01

428

Earth Sciences Division annual report 1980

Isotopically selective IR multiphoton dissociation of molecules (SF_6, CF_3I) in a pulsed gas-dynamic flow interacting with a solid surface was studied for the first time. A noticeable (severalfold) increase in the yield of products (compared to excitation of molecules in an unperturbed flow) without a substantial decrease in the selectivity of the process was observed. Possible reasons for the effect are discussed. (laser applications and other topics in quantum electronics)

2000-08-31

429

Diagnostic imaging of the acutely injured patient

Summaries of the highlights of programs in the Earth Sciences Division are presented under four headings; Geosciences, Geothermal Energy Development, Nuclear Waste Isolation, and Marine Sciences. Utilizing both basic and applied research in a wide spectrum of topics, these programs are providing results that will be of value in helping to secure the nation's energy future. Separate abstracts have been prepared for each project for inclusion in the Energy Data Base. (DMC)

1981-07-01

430

Development document for proposed effluent limitations guidelines and standards for the transportation equipment cleaning category

This book provides an analysis of pathophysiologic concepts of trauma and reviews the effectiveness of the available imaging modalities in acute trauma of various organ system. Topics covered are chest injuries; abdominal trauma; fractures of long bones; the foot and ankle; the knee; hand and wrist; the elbow; the shoulder; the pelvis hips; the spine; the skull and facial trauma and the clinical assessment of multiple injuries patients. Comparative evaluation of diagnostic techniques of radiography is discussed. Normal anatomy and bone fractures along with soft-tissue injuries are described.

1985-01-01

431

Decision Strategy Research: Policy Support

Contents of this report are under the following topical sections: Legal Authority; Summary and Scope; Data Collection Activities; Industry Description; Industry Subcategorization; Water Use and Wastewater Characterization; Pollutants Selected for Regulation; Pollution Prevention and Wastewater Treatment Technologies; Development of Control and Treatment Options; Costs of Technology Bases for Regulations; Pollutant Reduction Estimates; Non-Water Quality Impacts; Implementation of Proposed Effluent Limitation Guidelines and Standards; Analytical Methods; and Glossary.

1998-05-01

432

Data summary of municipal solid waste management alternatives

The objective of SCK-CEN's R and D programme on decision strategy research are (1) to support and advise the Belgian authorities on specific problems concerning existing and potential hazards from exposure to ionising radiation, both in normal and emergency situations; (2) to perform research on relevant topics that might have an important impact on decision making related to nuclear applications, including social and economic sciences. Main achievements in this area in 1999 are described.

2000-07-01

433

Covariant quantum equations in curved space-time, Lorentz covariance and tachyons

This appendix contains the alphabetically indexed bibliography for the complete group of reports on municipal waste management alternatives. The references are listed for each of the following topics: mass burn technologies, RDF technologies, fluidized-bed combustion, pyrolysis and gasification of MSW, materials recovery- recycling technologies, sanitary landfills, composting, and anaerobic digestion of MSW.

1992-10-01

434

Continuous emission monitoring -- Data acquisition and handling system for management

The author presents his views on the interrelation of quantum theory, space-time, Lorentz covariance and tachyons. He makes general observations on the nature of these topics and in particular on the nature of the mathematics used for their description and, without reaching any definite conclusions, points out some areas which require further critical examination. (W.D.L.).

435

Combined-cycle cogen plant a successful good neighbor

This paper describes New York State Electric and Gas Corporation`s concept for a comprehensive, centrally located data system for management of their continuous emission monitoring systems (CEMS) data. The topics of the paper include the power system`s mix of generating units; data reporting requirements; data base management; nitrogen oxides compliance tracking; sulfur dioxide, nitrogen oxides, carbon dioxide and flow monitoring; and allowance tracking.

1995-09-01

436

Coastal metabolism and the oceanic organic carbon balance

This article describes a new natural-gas-fired combined cycle cogeneration plant in Bellingham, Washington. The topics of the article include community impact, siting constraints, natural gas fuel, the flexibility provided by the steam turbine, the cooling tower and pumps, air-quality, noise, and cooling water system constraints, and community relations program.

1993-04-01

437

Chemicals from coal: New processes

The metabolism of organic matter in the coastal regions of the ocean may significantly affect the oceanic carbon budget. This paper describes the high percentage (30%) of oceanic oxidation that occurs in coastal areas and the impact of this metabolism on the carbon cycle and climate of earth. Organic metabolism in the ocean appears to be a source of carbon dioxide release into the atmosphere. Oxidation in the coastal zone is of special interest, as it is likely influenced by anthropogenic activity. Recommendations for future research on this topic are proposed. 129 refs., 2 figs., 6 tabs.

1993-02-01

438

This book deals specifically with the development of new processes of converting coal into useful chemical feedstocks. The major topic in this volume is the generation of syngas and its catalytic conversion to chemicals via the Fischer-Tropsch synthesis. Describes processes involved in conversion, recent catalytic developments, and the commercially important Sasol process. Also includes chapters on the carbide process and potential of future developments in the field.

1987-01-01

439

Catalytic chemistry

CRC handbook of physical properties of rocks. Volume III

Most chemical reactions in industry and biology are catalytic and play a role at some stage of the processing of about 80% of the goods manufactured in the U.S., yet catalysis is a neglected subject in chemical education. This book integrates the fragmentary treatment accorded the topic until now. It covers, in a unified way, catalysis in solutions, by enzymes, in synthetic polymers within the molecular scale cages of zeolites and other molecular sieves, and on surfaces of inorganic solids. The central ideas are chemical; and principles are illustrated by emphasizing industrial reactions and catalysts.

1991-01-01

440

CRC handbook of laser science and technology. Volume 3. Optical materials, Part 1 - Nonlinear optical properties/radiation damage

This book presents topics on: Density of rocks and minerals, includes histograms of density ranges; elastic constants of minerals, elastic moduli, thermal properties; inelastic properties, strength and rheology for rocks and minerals, rock mechanics and friction, and stress-strain relations; radioactivity, decay constants and heat production of isotope systems in geology; seismic attenuation, in rocks, minerals, and the earth, with application to oil exploration and terrestrial studies; and index.

1984-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

441

BUBL LINK: Natural language processing

This book examines the nonlinear optical properties of laser materials. The physical radiation effects on laser materials are also considered. Topics considered include: nonlinear optical properties; nonlinear and harmonic generation materials; two-photon absorption; nonlinear refractive index; stimulated Raman scattering; radiation damage; crystals; and glasses.

1986-01-01

442

B(s) properties at the Tevatron

... Author: Radev, Dragomir R. Subjects: natural language processing DeweyClass: 764 Resource type: document Natural Language Processing Research Group Research Group based in the Department of Computer Science, University of Sheffield. Conducts research into natural language analysis topics including data mining/information extraction, dialogue, and semantics. Author: Department of Computer Science, University of Sheffield Subjects: natural language processing DeweyClass: 764 Resource ...

443

An evaluation of current methods of diagnosing colorectal cancer in the United Kingdom

The Tevatron collider at Fermilab provides a very rich environment for the study B{sub s} mesons. In this paper they show a few selected topics from the CDF and D0 collaborations, giving special attention to the B{sub s} Mixing analyses. This note corresponds to the proceedings of the Hadron Collider Physics 2005 conference.

2005-11-01

444

Advances in Library Administration and Organization

Colorectal cancer (CRC) is a highly conversed topic, particularly since implementation of screening for CRC is imminent within the U.K. Aims: The aim of this research project was to examine the diagnostic tools currently used within the UK to detect CRC and their impact on the aetiology and epidemiology of CRC. Methodology: The complexity of the research topic lent itself towards a literature review. A systematic approach of researching was therefore adopted to analyse and critically evaluate the reliability and validity of articles. Electronic databases including AMED, Cancerlit, CINHAL, the Cochrane Library, EMBASE, MEDLINE and EBM-Reviews were utilised to provide a wide spectrum of recent and relevant articles. Other research strategies involved looking for books relating to the topics, which were kept to within 6 years of publication to maintain accuracy of information. Selected websites, such as NICE, the Department of ...

2009-05-15

445

Activated charcoal. October 1976-August 1989 (Citations from the COMPENDEX data base). Report for October 1976-August 1989

The Advances in Library Administration and Organization Series provides a body of research literature that contributes to the base of organizational theory upon which library administrators rely. Its mix of contributions to the literature of library administration and organization is both diverse and eclectic. This volume of the series covers a variety of topics relating to the management of academic, public and school libraries

2010-01-01

446

Activated charcoal. January 1970-October 1988 (Citations from the Compendex data base). Report for January 1970-October 1988

This bibliography contains citations concerning theoretical aspects and industrial applications of activated charcoal. Topics include absorption capacity and mechanism studies, kinetic and thermodynamic aspects, and properties descriptions and evaluations. Applications include utilzation in water analyses and waste treatment, air pollution control and measurement, and in nuclear facilities. (This updated bibliography contains 160 citations, 14 of which are new entries to the previous edition.)

1989-10-01

447

AERONAUTICAL ENGINEERING - NASA Technical Report Server (NTRS)

This bibliography contains citations concerning theoretical aspects and industrial applications of activated charcoal. Topics include absorption capacity and mechanism studies, kinetic and thermodynamic aspects, and properties descriptions and evaluations. Applications include utilization in water analyses and waste treatment, air pollution control and measurement, and in nuclear facilities. (This updated bibliography contains 150 citations, 14 of which are new entries to the previous edition.)

1988-11-01

448

A Meta-analysis to Investigate the Relation Between Fitzpatrick Skin Types and Tolerability of Adapalene-Benzoyl Peroxide Topical Gel in Subjects with Mild or Moderate Acne

Topics addressed include future trends in IR sensors, IR observer performance modeling ... steer a sensor platform with a thermal camera or an air-to-air missile system. .... Skyship and Sentinel series airships. It also outlines the current .... A layout schematic of the UPS is given. AIAA. A93-55494 ...

449

6. Workshop on heavy-charged particles in biology and medicine. Book of abstracts

The overall goal of acne management for all patients is to select treatments that effectively address as many pathogenic factors as possible while minimizing side effects. Acne therapy in darker skin...Full Text Available

2010-08-01

450

(Pittsburgh Energy Technology Center): Quarterly technical progress report for the period ending September 30, 1987. [coal research

Topics of this proceedings are: DNA damage and repair; Space research; Cell and tissue radiobiology; Treatment planning 1: The role of clinical RBEs; Treatment planning 2: Dose optimization and inverse planning; Dosimetry; Clinical results of particle therapy and new techniques; Status reports and future developments. Separate abstracts were prepared for 79 chapters. (orig./SR)

1997-09-01

451

(Photoexcited charge pair escape and recombination)

Programs in coal research by the Pittsburgh Energy Technology Center are discussed. Topics include: Coal Science and Chemistry, Coal Liquefaction, Alternative Fuels, Coal Preparation, Combustion, MHD Program, Flue Gas Cleanup, Environmental Coordination, and Technology Transfer. (CBS)

1988-04-01

452

Transient enhanced diffusion in B/sup +/ and P/sup +/ implanted silicon

Progress in four research areas on this project are summarized under the following topics: (1) Geminate charge pair recombination in hexane; (2) Fast current measurements resulting from excitation of charge transfer (CT) states; (3) Measurement of the dipole moment of excited states by DC conductivity; and (4) Charge separation at macroscopic interfaces between electron donor and acceptor solids. In a final section, personnel who have contributed to the project during the past budget period are described.

1990-01-01

453

Thin-film UV detectors based on hydrogenated amorphous silicon and its alloys

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

454

The compatibility of alloy 800 in HTR atmospheres

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

2001-05-16

455

The PAMELA space experiment: first year of operation

A thermodynamic analysis of the behaviour of Alloy 800 in helium based atmospheres relevant to the High Temperature Gas Cooled Reactor indicates that, depending upon the precise gas composition, oxidation and carburisation, or carburisation alone may be expected. The prime influence appears to be the moisture level. The morphology and structure of the reaction products are discussed. It is shown that the 'reactive' elements chromium, manganese, titanium and silicon are concentrated in the oxide scale which is normally duplex in structure. Aluminium oxide is formed at grain boundaries and in an internal oxidation zone together with titanium and sometimes silicon. In carburising conditions, mixed titanium-chromium carbides are formed. When this occurs, intergranular penetration is maximised. Weight gain data are assessed and briefly described and a tentative model for the mechanism of corrosion of Alloy 800 in HTR helium is proposed. Areas for ...

456

Study on the solid state reaction between bilayered Pd/Au films and silicon substrates

On the 15th of June 2006 the PAMELA experiment, mounted on the Resurs DK1 satellite, was launched from the Baikonur cosmodrome and it has been collecting data since July 2006. PAMELA is a satellite-borne apparatus designed to study charged particles in the cosmic radiation, to investigate the nature of dark matter, measuring the cosmic-ray antiproton and positron spectra over the largest energy range ever achieved, and to search for antinuclei with unprecedented sensitivity. The apparatus comprises a time-of-flight system, a silicon-microstrip magnetic spectrometer, a silicon-tungsten electromagnetic calorimeter, an anticoincidence system, a shower tail catcher scintillator and a neutron detector. The combination of these devices allows charged particle identification over a wide energy range.

2008-05-15

457

British Library Electronic Table of Contents (United Kingdom)

Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...

2006-01-01

458

Screen-printed Emitter-Wrap-Through solar cell with single step side selective emitter with 18.8% efficiency

British Library Electronic Table of Contents (United Kingdom)

Abstract A fabrication process for Emitter-Wrap-Through solar cells on monocrystalline material with high quality gap passivation by wet thermal silicon dioxide is investigated. Masking and structuring steps are performed by screen-printing technology. Via-holes are created by an industrially applicable high-speed laser drilling process. The cell structure features a selective emitter structure fabricated in a single high temperature step: a highly doped emitter at the via-holes and the rear side, allowing for a low via-hole resistivity as well as a low resistivity contact to screen-printed pastes, and a moderately doped front side emitter exhibiting high quantum efficiency in the low wavelength range. Therefore a novel approach is applied depositing either doped or undoped PECVD silicon d...

2011-01-01

459

Real time study of the crystallization of aluminium-base icosahedral phases by neutron powder diffraction

Radiation hardening of integrated circuits technologies

The thermal transformation of Al-base icosahedral phases was studied in-situ by real time neutron powder diffraction. Different compositions have been selected in order to vary the initial phase morphology and change the neutron scattering contrast between species. Alloys with low silicon and large aluminium contents produce first the orthorhombic O-Al_6Mn modification. In alloys with larger silicon content, the #alpha#-AlMnSi cubic phase appears soon after the beginning of the transformation but is still preceeded by O-Al_6Mn. Depending on compositions, the crystallization of the icosahedral phase is controlled either by the diffusion of Al through its interface with the residual fcc aluminium or that of Si within the bulk. The results are discussed in the light of current structural models. (author) 40 refs., 14 figs., 3 tabs.

1987-01-01

460

Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological radiation hardening and no more system hardening.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

461

Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

462

British Library Electronic Table of Contents (United Kingdom)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

463

Optimized pre-amorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on insulator

New synthesis routes for Sialon and Sialon-bonded ceramics

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

2008-12-01

464

Multi-Layer Inkjet Printed Contacts to Si

The use of Sialon ceramics has been restricted by the high temperature required for synthesis and the expense of the pure oxide and nitride raw materials required. For refractory applications the purity required is less demanding and it has been possible to exploit the outstanding durability of the Sialons at moderate cost. New low cost manufacturing routes are being developed by nitriding silicon metal powder at relatively low temperature with clay and various additives depending on the Sialon required. For example the introduction of carbon or fine silicon carbide allows the preparation of beta Sialons and alpha Sialons which can be stabilised by including the appropriate cations. A wide range of composite Sialon bodies with diverse properties can be prepared by a one step process. Current projects developing the synthesis routes are aimed, in the first instance, at refractory manufacture but are showing promise for more sophisticated ...

1998-09-28

465

Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 deg C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 deg C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

2005-11-01

466

Investigation of weld cracking in alloy 800

Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

2000-01-01

467

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

The subscale Varestraint test has been used to determine the relative hot cracking susceptibility of the fusion zone in four commercial heats of alloy 800. Although all four heats were susceptible to cracking, one heat exhibited a significant increase in cracking relative to the other three. Optical metallography revealed that nearly all the cracking was localized along fusion zone grain boundaries. Microprobe analysis of the grain boundaries detected high concentrations of titanium, silicon, and niobium resulting from partitioning during solidification. The fusion zone hot cracking mechanism in alloy 800 involves the complex interaction of titanium, silicon, niobium, and carbon along the solidification boundaries. SEM and Auger analyses of the hot crack fracture surfaces revealed the presence of (Ti, Nb)-rich carbides, suggesting that these particles precipitate from the liquid which solidifies last on the fracture surface. 23 references.

1984-03-01

468

Hybrid insulator - the excellent post insulator for HVAC and HVDC power station

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

2003-11-17

469

Fabrication of Dense -SiAlON Ceramics with ZrO2 Additions Via a Rapid Reaction-Bonding and Postsintering Route

A solid layer artificial pollution test was carried out to study the pollution performance of a new type of hybrid station post insulator used in suspension and tensile high voltage transmission lines. The structure of the separated silicone rubber shed and porcelain core hybrid insulator was shown. The new insulator showed excellent pollution performance under both HVAC and HVDC conditions. It also exhibited excellent aging performance in artificial aging tests. The mechanical strength of the hybrid insulator was also better than normal composite insulators. Another advantage revealed was the fact that separated silicone rubber sheds and porcelain core hybrid post insulators are easier to manufacture than normal porcelain post insulators and other hybrid insulators. 5 refs., 6 tabs., 1 fig.

1997-12-31

470

British Library Electronic Table of Contents (United Kingdom)

Rapid nitridation was used to fabricate reaction-bonded and postsintered -Si6-ZAlZOZN8-Z (Z=1) ceramics with monoclinic ZrO2 added to the starting powder. Thermo-gravimetric analysis revealed that the addition of ZrO2 reduced the starting temperature of the main nitridation reaction. Using a reaction-bonding route with heating rates of 5, 10, and 20C/min, to fabricate -SiAlON ceramics without ZrO2 resulted in unreacted silicon that bled out of the specimens and the Z=1 composition samples did not maintain the original green compact morphology. On the other hand, no such bleeding of melted silicon was observed for samples with ZrO2 additions and the samples following nitridation maintained the original green morphology. The microstructure and mechanical properties of samples produced by rap...

2011-01-01

471

Enhanced diffusion from interstitial trapping during solid-phase-epitaxial growth of silicon alloys. Draft

Enhanced diffusion from interstitial trapping during solid-phase-epitaxial growth of silicon alloys

During the recrystallization by solid-phase-epitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, we propose that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing.

1984-08-01

472

Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD

During the recrystallization by solid-phase-expitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +/- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, it is proposed that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing. 12 references, 6 figures.

1984-01-01

473

Electrical properties of focused-ion-beam boron-implanted silicon

Microcrystalline silicon carbide ({mu}c-SiC) was prepared at low substrate temperatures using Hot Wire chemical vapor deposition (HWCVD). High crystalline volume fractions were achieved at high hydrogen dilution and high deposition pressure. Without intentional doping, such material shows high dark conductivity and high optical absorption below the band gap. The material prepared at low deposition pressure or low hydrogen dilution, on the other hand, shows much lower conductivity and sub-gap absorption, but high spin densities up to 5 x 10{sup 19} cm{sup -3}. This high absorption can be attributed to free carriers, different to {mu}c-Si:H where a correlation between the sub-gap absorption and the spin density is observed.

2008-01-15

474

Effect of different treatments on acid centers of very high silicon zeolites studied by ir spectroscopy

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

475

Design and fabrication of an 1-MW(th) ceramic tube bench-model solar receiver

Using the infrared spectroscopy method, we have studied the effect of thermal dehydration (under vacuum and in air) and treatment with water vapor on the acid centers of very high silicon zeolites of the ZSM type. We have shown that dehydration under vacuum and in air completely and irreversibly removes the OH groups at 1120/sup 0/K, while treatment with water vapor removes these groups at 770/sup 0/K. The Lewis acid centers of dehydrated zeolites (represented by two types of centers) are more heat-stable than the Bronsted acid centers, but the vapor treatment at 1020/sup 0/K leads to the disappearance of the Lewis acid centers. In this work, we discuss the reasons for destruction of the acid centers of the zeolites under different treatment conditions.

1986-08-01

476

Depth-profiling of vertical sidewall nanolayers on structured wafers by grazing incidence X-ray flourescence

In 1976 the design and fabrication began of an 1 MWt Bench Model Solar Receiver (BMSR) to demonstrate and further develop the ceramic tube central receiver concept. Although many of the properties of silicon carbide are well documented, this material has never been utilized in an application of this type and size. Further investigation was undertaken to confirm the choice of silicon carbide against available metals and other ceramic materials. The BMSR is configured for testing at the Department of Energy's Central Receiver Test Facility in Albuquerque, New Mexico. Design and fabrication of the BMSR are highlighted in this report. Completion and testing of the BMSR are planned for the next phase of the project.

1982-05-01

477

British Library Electronic Table of Contents (United Kingdom)

The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200?mm and 300?mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of ...

2008-01-01

478

Crystallisation of grain boundary phases in silicon nitride and sialon ceramics

Cosmic ray antiproton/electron discrimination capability of the CAPRICE silicon-tungsten calorimeter using neural networks

A survey is presented of the principles and practice of tailoring sintering liquid composition and processing cycle to enable crystallisation of intergranular phases in silicon nitride and sialon ceramics. Critical features in sialon ceramics are the O/N balance in residual glasses and post-sintering heat-treatment temperatures to enable nucleation of either intermediate phases at constant composition or oxide phases with re-partitioning of non stoichiometric components in #beta#' or #alpha#' solid solutions. Crystallisation of disilicate phases in non-sialon compositions exemplifies a problem in control of polymorphs with differing atomic volumes. Crystallisation of intergranular phases has an influence mainly on high-temperature mechanical and environmental behaviour of these ceramics. (orig.).

1993-10-04

479

Ceramic bearings for application to hard disc drives (HDD); HDD yo ceramic ball bearing

A data analysis based on an artificial neural network classifier is proposed to identify cosmic ray antiprotons detected with the CAPRICE silicon-tungsten imaging calorimeter against electron background in the energy range 1.2-4.0 GeV. A set of new physical variables, describing the events inside the calorimeter on the base of their different patterns, are introduced in order to discriminate between hadronic and electromagnetic showers. The ability of the artificial neural network classifier to perform a careful multidimensional analysis gives the possibility to identify antiprotons with an electron rejection 408{+-}85 (stat) at 95.0{+-}0.2 (stat)% of signal detection efficiency. The high accuracy achieved by this method improves substantially the efficiency in the evaluation of the cosmic ray antiproton spectrum. (orig.).

1996-11-01

480

Boron transient enhanced diffusion in heavily phosphorus doped silicon

Ceramic ball bearings of silicon nitride are used for hard disk drive (HDD) spindle motors, to increase seed, reliability and memory capacity of the HDDs. Silicon nitride ceramics have advantages of lightweight, high strength and hardness over the conventional steel for bearings, but is expensive. A new process of high cost performance has been developed for mass production of the small-size ceramic balls. The company plans to apply these bearings to higher devices, e.g., servers, for the time being, and to expand the applicable areas, e.g., common devices and other small-size motors. The ceramic bearings have been developed jointly with Koyo Seiko Co. Ltd. (translated by NEDO)

2000-03-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

481

Atomic scale simulations of arsenic ion implantation and annealing in silicon

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

1996-12-02

482

Anomalous enhanced diffusion and electrical activation of boron in silicon after rapid isothermal annealing

We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.

2004-12-15

483

Analysis on anomalous degradation in silicon solar cell designed for space use

Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).

484

Analysis of plasma treatment and vapor heat treatment for thin-film transistors by extracting trap densities at front and back interfaces

Recently, we have found the anomalous degradation of electrical performance in silicon solar cells irradiated with charged particles in a high-fluence region. This anomalous phenomenon has two typical features, which are sudden-drop-down of electrical performances in a high-fluence region and slight recovery of the short circuit current I{sub SC} just before the sudden-drop-down. These features cannot be understood by a conventional model coming from the decrease of minority-carriers life-time. We introduce this anomalous degradation of the electrical performance in Si solar cells irradiated with electrons or protons. We also report the result of simulation for the fluence dependence of the I{sub SC}, and discuss the mechanism of this anomalous phenomenon. (author)

1997-03-01

485

Aluminium Phosphide-Induced Esophageal Stricture Palliation with Polyflex Stent

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.

2004-05-17

486

British Library Electronic Table of Contents (United Kingdom)

A 21-year-old woman developed midesophageal stricture two weeks after ingestion of aluminium phosphide (AlP) tablets. Aluminium phosphide is a lethal protoplasmic toxin and is also the most common cause of suicidal poisoning in northern India. Upper gastrointestinal endoscopy (UGIE) showed a tight esophageal stricture 29?cm from the incisors with a circumferential ulcer. Dilatation up to 17?mm was done using Savary-Gilliard dilators. She had repeated dilatations three times at nearly two-week intervals. In view of the resistant stricture, a silicone Polyflex stent was placed across the stricture and removed after 3?months; there was no recurrence of stricture even after three months of follow-up. Patients with recurrent esophageal stricture and those with fistula may benefit from silicone ...

2008-01-01

487

A phenomenological model for the macroscopic characteristics of irradiated silicon

A nanosized silicon thin film as high capacity anode material for Li-ion rechargeable batteries

The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.

488

A Combinatorial Library of Micro-Topographies and Chemical Compositions for Tailored Surface Wettability

Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.

2006-07-15

489

British Library Electronic Table of Contents (United Kingdom)

Abstract Surface modification of topography and chemistry in order to achieve a specific water contact angle (CA) has been explored by using a novel combinatorial screening platform. The screening arrays consisted of 507 distinct combinations of micro-topographies and chemical compositions. By performing chemical modifications with 1H, 1H, 2H, 2H perfluoroethyltriethoxy-silane (PFS) and n-octadecyltriethoxysilane (ODS) on standard silicon wafers it was possible to include both superhydrophobic and very hydrophilic pad arrays in the same screening platform. Surfaces modified with PFS were more hydrophobic than surfaces modified with ODS, while the unmodified silicon surfaces were hydrophilic. For the PFS modified surfaces the largest CAs were achieved with a small pillar size of X-=-1-m and...

2011-01-01

490

Advanced Instrumentation and Control Methods for Small and Medium Reactors with IRIS Demonstration. Final Report. Volume 1

The influence of self-diffraction on two-wave mixing for counterpropagating geometry

Development and deployment of small-scale nuclear power reactors and their maintenance, monitoring, and control are part of the mission under the Small Modular Reactor (SMR) program. The objectives of this NERI-consortium research project are to investigate, develop, and validate advanced methods for sensing, controlling, monitoring, diagnosis, and prognosis of these reactors, and to demonstrate the methods with application to one of the proposed integral pressurized water reactors (IPWR). For this project, the IPWR design by Westinghouse, the International Reactor Secure and Innovative (IRIS), has been used to demonstrate the techniques developed under this project. The research focuses on three topical areas with the following objectives. Objective 1 - Develop and apply simulation capabilities and sensitivity/uncertainty analysis methods to address sensor deployment analysis and small grid stability issues. Objective 2 - Develop and test an autonomous and ...

2009-02-23

491

Study of both nature and topology of the nano-porous materials by the positron annihilation spectroscopy

Two-wave mixing in sillenite crystals such as bismuth silicon oxide (Bi12SiO20) and bismuth titanium oxide (Bi12TiO20) of (001)- and (221)-cuts for counterpropagating geometry was studied within the frame of slowly varying amplitude approximation. Electrooptic, photoelastic, piezoelectric, self-diffraction effects and optical activity were taken into account.

2005-06-01

492

Sorbent for use in hot gas desulfurization

By the methods of the angular distribution of photon annihilation, time distribution of photon annihilation, photoluminescence spectroscopy, Fourier IR-spectroscopy, atomic force microscopy the detail information on relation of the structural and physical properties of the porous nano-structures is obtained. Study of pores sizes in a different nano-porous materials, such as the porous silicon, porous anode aluminium oxide, porous solids exposed to light atoms ion implantation (hydrogen, deuterium, helium) is carried out.

2003-09-15

493

Radial distribution functions of amorphous silicon

A multiple metal oxide sorbent supported on a zeolite of substantially silicon oxide is used for the desulfurization of process gas streams, such as from a coal gasifier, at temperatures in the range of about 1200.degree. to about 1600.degree. F. The sorbent is provided by a mixture of copper oxide and manganese oxide and preferably such a mixture with molybdenum oxide. The manganese oxide and the molybdenum are believed to function as promoters for the reaction of hydrogen sulfide with copper oxide. Also, the manganese oxide inhibits the volatilization of the molybdenum oxide at the higher temperatures.

1993-01-01

494

In-beam conversion electron spectroscopy using the SACRED array

Substantial changes in the radial distribution function of amorphous Si films have been observed in neutron-diffraction studies. The spectra indicate changes in short-range order associated with an approx.11% modification in the bond-angle distribution width. The results allow the first direct comparison of structural and vibrational Raman probes of variations in local order in thin-film amorphous solids. Good agreement is obtained between the measured bond-angle variation and that based on Raman estimates.

1989-03-15

495

Effect of the hydroxyl-ethyl-cellulose concentration in a silicon wafer polishing slurry on the wafer surface roughness

Conversion electron studies of medium-heavy to heavy nuclear mass systems are important where the internal conversion process begins to dominate over gamma-ray emission. The use of a segmented detector array sensitive to conversion electrons has been used to study multiple conversion electron cascades from nuclear transitions. The application of the silicon array for conversion electron detection (SACRED) for in-beam measurements has successfully been implemented. (orig.). With 2 figs.

496

The purpose of this study was to reveal the mechanism of wafer touch polishing using a high purity colloidal silica slurry containing organic surfactants such as hydroxyl-ethyl cellulose. The effect of the surfactant concentration on wafer touch polishing was studied to improve the roughness of wafer surfaces after polishing. The haze level and the micro-roughness decreased with decreasing surfactant concentration.

2006-04-01

497

Duct and cladding alloy

Acoustic wave propagation in fluid metamaterial with solid inclusions

An austenitic alloy having good thermal stability and resistance to sodium corrosion at 700.degree. C. consists essentially of 35-45% nickel 7.5-14% chromium 0.8-3.2% molybdenum 0.3-1.0% silicon 0.2-1.0% manganese 0-0.1% zirconium 2.0-3.5% titanium 1.0-2.0% aluminum 0.02-0.1% carbon 0-0.01% boron and the balance iron.

1983-01-01

498