Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-typesilicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-typesilicon by using NTD method. Therefore, in this work, we investigated the relationship ...
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-typesilicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-typesilicon by using NTD method. Therefore, in this work, we investigated the relationship ...
There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a siliconisotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)
Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. ...
The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the ...
This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar ...
The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).
N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code
High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is to show that the UHT ...
A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is ...
Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-typesilicon wafers with energies from 100eV to 1keV and doses ...
As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type ...
For the first time a segmented n-type HPGe detector was operated directly submerged in liquid nitrogen over a long period. As this kind of detector is envisioned to be used in GERDA phase II, it was operated with a low mass signal cable with snap-contacts and mounted in a low-mass copper holder. The detector performance was stable over 146 days, indicating that neither detector nor contacts deteriorated.
The objective of this study was to determine the usefulness of parathyroid scintigraphy in histological estimation for secondary hyperparathyroidism (2HPT) using Tc-99m sestamibi or Tc-99m tetrofosmin. Tc-99m sestamibi (MIBI) and Tc-99m tetrofosmin (Tetro) parathyroid imaging following double-phase study, magnetic resonance imaging (MRI), and ultrasound were performed on 14 patients with 2HPT. All patients underwent parathyroidectomy. The uptake of two tracers in parathyroid areas was compared with the histopathologic findings. Forty-nine parathyroid glands were surgically explored and histologically proven to be hyperplastic. Of these, 42 were diagnosed with nodular type (N-type) hyperplasia, and 7 with diffuse type (D-type) hyperplasia. MIBI and Tetro parathyroid imagings detected 34 and 35 parathyroid glands, respectively. The sensitivity of MIBI was determined to be 76.2% (32/42) for N-type, and 28.6% (2/7) for D-type. The sensitivity of ...
A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.
Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm"2 V"-"1 s"-"1 and 8.8 x 10"1"7 cm"-"3, respectively. The Seebeck coefficients (-72 ?V K"-"1) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.
In the framework of the RIM (Russian Italian mission) program, PAMELA is the experiment devoted to the accurate measurement of the positron and antiproton spectra from the very low energy thresh-old of 100 MeV up to more than 50 GeV, and to hunt antinuclei with sensitivity better than 10{sup -7} in the helium/helium ratio. A permanent magnet equipped by microstrip silicon sensors, measures the particle momentum with MDR=400 GV/c on GF=25 cm{sup 2} sr. An accurate ToF system, a 19 X{sub o} deep imaging calorimeter, an aerogel Cherenkov counter and a TRD detector complement the spectrometer in order an efficient e{sup +-}/p{sup +-} separation and some light isotope identification capability. The PAMELA experiment will be carried out on a 700 km high polar orbit, on board of the Earth-observation meteor-3A satellite, to be launched at the end of 1988.
The measurements of the nuclear decay of actinide isotopes and the evaluation of the radioactive properties of nuclide with the mass 242 is discussed in this paper.
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type ...
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer ...
The nine title compounds were prepared from the elements by arc-melting and subsequent heat treatment in resistance and high-frequency furnaces. The crystal structure of these isotypic compounds was determined for YPdSi from single-crystal X-ray diffractometer data: Pmmn, a = 430.8(1) pm, b = 1391.2(1) pm, c = 743.1(1) pm, Z = 8, R = 0.024 for 417 structure factors and 40 variable parameters. The crystal structures of the isotypic compounds GdPdSi and ErPdSi were also refined from single-crystal data. The structure is of a new type. It consists of condensed, six-membered rings of alternating palladium and silicon atoms with Pd-Si bond distances varying between 249.6 and 258.8 pm. These two-dimensionally infinite nets are connected to each other via weak Pd-Si and Si-Si bonds with bond distances of 276.3 and 259.5 pm. The rare earth atoms are situated above and below the six-membered palladium-silicon rings in a manner as it is known for the ...
The world`s population of research reactors is growing old. Many have been adapted to serve new purposes over their lives, from testing materials for nuclear power programmes and supporting neutron physics experiments, to colouring gemstones, doping silicon and generating medical isotopes. In the first article of this survey of research reactor issues, Wilfried Krull from GKSS in Germany describes the effects on a reactor of supporting these changes in application as ``design ageing`` . Managing this and other symptoms of ageing to extend plant life is a key task for operators, and Krull discusses the efforts being made internationally to handle them. Eventually, terminal decline of one vital component can determine when a reactor has to be shutdown for refurbishment. For BR2 in Belgium, it was the beryllium matrix. Edgar Koonen from SCK-CEN explains work being done to replace it and extend reactor life for around 15 years. The Triga at the ...
Fractionation of isotopes of the alkali metals and the alkaline earth metals in ion exchange chromatography of their chlorides was studied. The heavier isotopes of potassium and rubidium were found to be preferentially fractionated into the ion exchanger phase while the lighter isotopes of lithium, magnesium, calcium and strontium were enriched in the exchanger phase. This can be interpreted as a resultant of the relative significance of isotope effect upon dehydration and isotope effect accompanying the phase change of the hydrated metal ion. Found was no evidence of anomalous isotope effect attributable to the odd-even difference in mass number of isotopes. Based on the spectroscopic and solution chemical data (experimental and theoretical), the isotopic reduced partition function ratios of the hydrated alkaline metal ...
Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.
We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.
Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).
A unified calculation of neutron-rich isotopes in lithium is performed using the hyperspherical basis in which the underlying symmetry of each isotope exhibits a simple structure. The variation of the binding energy as a function of mass number is qualitatively reproduced, and the asymptotic of radial distribution of each isotope decreases exponentially. The form factors of the lithium isotopes are calculated and display diffraction minima. 27 refs., 3 figs., 3 tabs.
We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.
Separation of lithium isotopes was investigated by chemical ion exchange with a hydrous manganese(IV) oxide ion exchanger using an elution chromatography. The capacity of manganese(IV) oxide ion exchanger was 0.5 meq/g. The heavier lithium isotope was enriched in the solution phase, while the lighter isotope was enriched in the ion exchanger phase. The separation factor was determined according to the method of Glueckauf from the elution curve and isotopic assays. The separation factor of {sup 6}Li{sup +} -{sup 7}Li{sup +} isotope pair fractionation was 1.018.
A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.
A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.
In this paper, an attempt is made to outline the priority areas for research in human nutrition in India that could be tackled by appropriate application of stable isotope technology. 10 refs.
We present a laser spectroscopic approach for measuring the charge radius of the halo nucleus {sup 11}Li and report on recent progress in the development of the experimental apparatus.
Perylene bisimides (PBIs) represent an important class of organic n-type semiconductors exhibiting a relatively high electron affinity among large-band-gap materials. Herein synthesis and characterization of several unsymmetrical N-substituted PBI dyes is presented and the thermotropic behavior, which is strongly affected by the respective N-substituents was investigated. Two different series of highly soluble and fluorescent derivatives have been synthesized: (1) PBIs bearing swallow-tailed alkyl chains, different in size or (2) one swallow-tailed alkyl chain and one branched oligoethylenglycolether. Synthesis of these PBIs is generally feasible by two distinct divergent synthesis approaches. Thermotropic behavior was studied by DSC, POM and XRD measurements. Inherent {pi}-{pi} interactions between cofacially orientated perylene molecules and the elliptic shape of the molecule favor the ordering in columns and self-organized architectures. Among them hexagonal ...
By means of ab-initio electronic structure calculation and one-dimensional Boltzmann transport equation solution, we investigate the size dependent thermoelectric (TE) properties of n-type ZnO nanowires (NWs) and surface passivation effects. As demonstrated by our calculations, largest figure of merit ZT achievable in thin NWs is larger than that in wide NWs, whereas being restrained by higher demand of n-type doping. Moreover, bare NWs are superior in TE application comparing with the passivated. To compete with conventional TE materials, lattice thermal conductivity of ZnO NWs should be at least 2 orders of magnitude lower than bulk value.
The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society
The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).
We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.
The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.
"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."
Aimed at post-graduate and post-doctoral researchers in geochemistry, this book reflects the rapid changes in the applications of radioactive and stable isotope analysis to a range of geological and geochemical problems. Isotropic chemistry and methods used in mass spectroscopy are discussed initially. The second section deals with radiometric dating methods. The role of isotopes in climate and environmental research is also explored. The book closes with a section on extra-terrestrial matter, geothermometry and the isotopic geochemistry of the Earth`s lithosphere. (UK).
The electrical resistivity at low temperatures (T = 10 to 90 K) of the lithium isotopes /sup 6/Li and /sup 7/Li and of an isotopic mixture /sup 7 +6/Li has been studied. The specimens contained a small amount of chemical impurities. An appreciable difference was observed in the temperature dependence of the resistivity produced both by deformation of the phonon spectrum, related to the change in isotopic composition, and by the presence of chemical impurities making the nonequilibrium part of the electron distribution function more isotropic.
In our previous theoretical analyses, solubility-limited mass transfer from waste solids applies if a species is at a constant elemental concentration in liquid at the waste surface. For an element with isotopes that decay appreciably during the time of interest, a solubility boundary condition results in a time-dependent boundary concentration of each isotope. Here we present mass-transfer equations that include the effects of isotopic decay boundary conditions. 9 refs., 1 fig.
The membrane transport of the two stable lithium isotopes, {sup 6}Li and {sup 7}Li, by erythrocytes has been studied using a dual channel atomic absorption spectroscopic technique. {sup 6}Li appears to be taken up preferentially to {sup 7}Li, in the ratio of 10 to 40%, depending on the concentration of total lithium and on the lithium isotopic ratio in the external medium.
The results of calculated and experimental investigation of interphase isotopic exchange efficiency in countercurrent columns are given when separation processes of isotope mixtures are taken place with use of liquid-solid systems. Effect of liquid phase flow on transfer unit height in ion exchange separation of boron, lithium, nitrogen isotopes is considered. 40 refs.; 5 figs.
In this comprehensive review of current research on isotopic variations of elements in extraterrestrial materials, the variations were classified in terms of the major process involved in the modification of the isotopic composition of the element concerned. Maximum isotopic variations of each element were retrieved from publications which were available in Tokyo up to December 1985, and are presented in tabular form. (author).
Reliable and consistent characterization of the stable isotope composition of atmospheric water vapour and its temporal variability are important prerequisites to the wider application of isotope mass balance methods in atmospheric and water balance studies. A new approach is proposed which utilizes standard class-A evaporation pans, which have sufficient volume to buffer short-term transient variations in atmospheric conditions, justifying the assumption of constant kinetic isotopic fractionation effects in concert with precisely measured temperature and relative humidity to derive vapour isotopic composition. The results of the studies suggest that isotopic sampling of existing, conventionally operated class-A evaporation pans could offer a straightforward and cost-effective solution to the problem of documenting the shifting isotopic distribution in ...
Identifying stable isotope variation and mineralogical changes in fractured rock may help establish the history of climatic and geomorphological processes that might affect the isolation properties of a waste repository site. This study examines the use of the stable isotope ratios of oxygen ({sup 18}O/{sup 16}O) and carbon ({sup 13}C/{sup 12}C) in authigenic minerals as hydrogeochemical tools tracing low-temperature rock-water interaction in variably-saturated fractured stuff. Isotopic compositions of fracture-filling and rock matrix minerals in the Apache Leap tuff, near Superior, Arizona were concordant with geothermal temperatures and in equilibrium with water isotopically similar to present-day meteoric water and groundwater. Oxygen and carbon isotope ratios of fracture-filling, in unsaturated fractured tuff, displayed an isotopic gradient believed to ...
Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.
This paper describes the problems and capabilities of highly enriched actinide isotopes production by electromagnetic separation in the S-2 mass separator of VNIIEF. Isotope enrichment characteristics for uranium, plutonium, americium and curium isotopes, used in different nuclear physics experiments, and isotope contamination for single and double separations are presented. The capabilities for highly enriched "2"4"4Pu and "2"4"8Cm production for nuclear accelerator experiments and other applications are described, some details of the current and future programmes are given and the transport packaging is described. (orig.).
DOE/NNSA and IRSN collaborated on a study of gamma-ray instruments and analysis methods used to perform isotopic measurements of special nuclear materials. The two agencies agreed to collaborate on the project in response to inconsistencies that were found in the various versions of software and hardware used to determine the isotopic abundances of uranium and plutonium. IRSN used software developed internally to test the MGA and FRAM isotopic analysis codes for criteria used to stop data acquisition. The stop-criterion test revealed several unusual behaviors in both the MGA and FRAM software codes.
A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.
Stable isotopes are valuable tools for research on mineral bioavailability and metabolism. They can be used as tracers with no exposure to radiation and they do not decay over time. Attempts to use stable isotopes of minerals as metabolic tracers were first described only 25 years ago. There were relatively few reports of their use over the next 15 years, but interest in stable isotopes has expanded markedly in the last 10 years. The advantages of stable isotope tracers are so great that scientists have been willing to accept the laborious and costly nature of mineral isotope analysis, and substantial progress has been made in the field. New applications for stable isotopes and new analytical methods have been introduced recently. However, limitations to the approach and methodological problems remain to be resolved. This review describes early work in the field ...
A Smarandache quasigroup(loop) is shown to be universal if all its f,g-principal isotopes are Smarandache f,g-principal isotopes. Also, weak Smarandache loops of Bol-Moufang type such as Smarandache: left(right) Bol, Moufang and extra loops are shown to be universal if all their f,g-principal isotopes are Smarandache f,g-principal isotopes. Conversely, it is shown that if these weak Smarandache loops of Bol-Moufang type are universal, then some autotopisms are true in the weak Smarandache sub-loops of the weak Smarandache loops of Bol-Moufang type relative to some Smarandache elements. Futhermore, a Smarandache left(right) inverse property loop in which all its f,g-principal isotopes are Smarandache f,g-principal isotopes is shown to be universal if and only if it is a Smarandache left(right) Bol loop in which all its f,g-principal isotopes ...
In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.
Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)
We have measured production cross-sections of the new neutron-rich isotopes {sup 58}Ti, {sup 61}V, {sup 63}Cr, {sup 66}Mn, {sup 69}Fe, {sup 71}Co and neighbouring isotopes that have been identified as projectile fragments from reactions between a 500 MeV/u {sup 86}Kr beam and a beryllium target. The isotope identification was performed with the zero-degree magnetic spectrometer FRS at GSI, using in addition time-of-flight and energy-loss mesurements. The experimental production cross-sections for the new nuclides and neighbouring isotopes are compared with an empirical parameterization. The resulting prospects for reaching even more neutron-rich isotopes, such as the doubly-magic nuclide {sup 78}Ni, are discussed. (orig.).
We have measured production cross-sections of the new neutron-rich isotopes {sup 58}Ti, {sup 61}V, {sup 63}Cr, {sup 66}Mn, {sup 69}Fe, {sup 71}Co and neighbouring isotopes that have been identified as projectile fragments from reactions between a 500 MeV/u {sup 86}Kr beam and a beryllium target. The isotope identification was performed with the zero-degree magnetic spectrometer FRS at GSI, using in addition time-of-flight and energy-loss measurements. The experimental production cross-sections for the new nuclides and neighbouring isotopes are compared with an empirical parametrization. The resulting prospects for reaching even more neutronrich isotopes, such as the doubly-magic nuclide {sup 78}Ni, are discussed. (orig.).
We have measured production cross-sections of the new neutron-rich isotopes "5"8Ti, "6"1V, "6"3Cr, "6"6Mn, "6"9Fe, "7"1Co and neighbouring isotopes that have been identified as projectile fragments from reactions between a 500 MeV/u "8"6Kr beam and a beryllium target. The isotope identification was performed with the zero-degree magnetic spectrometer FRS at GSI, using in addition time-of-flight and energy-loss measurements. The experimental production cross-sections for the new nuclides and neighbouring isotopes are compared with an empirical parametrization. The resulting prospects for reaching even more neutronrich isotopes, such as the doubly-magic nuclide "7"8Ni, are discussed. (orig.).
We have measured the isotope shifts of some dipole transitions between excited states of the even strontium isotopes 88 and 86 by applying the technique of Doppler-free intermodulated optogalvanic spectrocopy to a heat-pipe discharge. We were also able to investigate the isotope shift of the Sr II resonance line at 4216.6 A optogalvanically in the mentioned pair of isotopes. Because the 5 snf"1F_3 series appear to have zero level isotope shifts for n>=6, we can give residual level isotope shifts (RLIS) of several odd-parity states of sup(88,86) Sr I. The RLIS of the 5 snp "1P_1 series show pronounced configuration mixing around n=7. (orig.).
The carbon isotope profiles of shallow-marine carbonates from the Barremian-Aptian Kharaib and Shuaiba formations of the Arabian Gulf region range between 0.5 and 7{per_thousand} {delta}{sup 13}C PDB (Peedee belemnite). Systematic variations can be correlated with isotope profiles reported from Tethyan pelagic limestone sequences. The detailed correspondence between the isotopic signature of the relatively well-dated pelagic limestones and the poorly dated shallow-water limestones from the Arabian Gulf region suggests that global marine carbon isotope changes apparently affected deep-sea and shallow-water carbonate sediments similarly and at a similar time resolution. Although oxygen isotopes have been reset during diagenesis, carbon isotopes appear to have maintained their primary marine signature through time. No evidence has been found to connect carbon ...
Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.
Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.
Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...
An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available
Lithium isotope separation by displacement chromatography is studied using fundamental principles; the equations are derived assuming theoretical stages in lithium adsorption bands. The concentration profiles in the band are calculated numerically under unsteady state.
The carbon-isotope ratio recently obtained for the carbon found in the Murchison meteorite, which has been shown (by the racemic nature of twelve component amino acids) to be free of terrestrial contamination,...Full Text Available
The angular ..gamma gamma..-correlations for nuclei of Sr even-even isotopes with A=82, 84, 86, 88 were measured. Multipole structurs of ..gamma..-transtion series and th coefficients multipole mixing were determined.
The angular #gamma##gamma#-correlations for nuclei of Sr even-even isotopes with a=8 82, 84, 86, 88 were measured. Multipole structurs of #gamma#-transtion series and th coefficients multipole mixing were determined.
Fatty acid biomarker analysis coupled with gas chromatography-isotope ratio mass spectrometry was used to confirm the presence of methanotrophic and thiotrophic bacterial endosymbionts in the tissues...Full Text Available
... M. Taylor, T. Kurt Kyser. (2009) Feather isotope analysis discriminates age-classes of Western, Least, and Semipalmated sandpipers when plumage ... ...
... M. Taylor, T. Kurt Kyser. (2009) Feather isotope analysis discriminates age-classes of Western, Least, and Semipalmated sandpipers when plumage ... ...
Based on a generalized theory of perturbations and on non-linear programming an approach to the quantitative determination of necessary accuracies for nuclear data is described. It is used to calculate transactinide isotope build-up in reactors.
A combination of degenerate four-wave mixing spectroscopy and a low-pressure sampling technique has been studied for isotopic analysis in an air-acetylene flame. Hyperfine spectra of D lines of sodium and several mixtures of lithium isotopes obtained in this way are presented.
... M. Taylor, T. Kurt Kyser. (2009) Feather isotope analysis discriminates age-classes of Western, Least, and Semipalmated sandpipers when plumage ... ...
... M. Taylor, T. Kurt Kyser. (2009) Feather isotope analysis discriminates age-classes of Western, Least, and Semipalmated sandpipers when plumage ... ...
13C metabolic flux analysis (MFA) is the most comprehensive means of characterizing cellular metabolic states. Uniquely labeled isotopic tracers enable more focused analyses to probe...Full Text Available
This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.
Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)
The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).
In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.
A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...
A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.
... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...
Full text: The isotopic assay instrument under development at Pacific Northwest National Laboratory (PNNL) is capable of rapid prescreening to detect small and rare particles containing high concentrations of uranium in a heterogeneous sample. The isotopic measurement concept is based on laser vaporization of solid samples followed by sensitive isotope-specific detection using either uranium atomic fluorescence emission or uranium atomic absorbance. Both isotopes are measured concurrently, following a single ablation laser pulse using two external-cavity violet diode lasers. The simultaneous measurement of both isotopes enables the correlation of the fluorescence and absorbance signals on a shot-to-shot basis. This measurement approach demonstrated negligible channel crosstalk between isotopes. Scanning the heterogeneous samples provides high-resolution imagery ...
Separation of lithium isotope by NTOE compound was carried out with 0.01M HCl solution. The ion exchange capacity of NTOE was 0.8 meq/g. The separation factor, #alpha#=("7Li/"6Li)_s_o_l_i_d/("7Li/"6Li)_l_i_q_u_i_d was 1.0242 by the elution chromatography. The lighter isotope, "6Li was concentrated in the liquid phase, while the heavior isotope, "7Li was enriched in the solid phase. (author).
The isotopic enrichment of copper ions in a positive column Cu-Nu discharge using optogalvanic excitation is analyzed with a rate equation model With excitation at 510.6 nm, the fraction of the ions belonging to the 63-amu isotope of copper is enriched relative to the neutral abundance. Enrichment as large as 10% is calculated when the initial abundance of the neutral isotope is small (< or =0.1) and the discharge current density is large (> or =75 mA/cm/sup 2/). The degree of enrichment is examined as a function of the initial abundance, discharge current, the rate of charge exchange, and the diameter of the discharge tube.
The effects of temperature and the use of macroreticular resins were studied in lithium isotope separation by an ion-exchange method. The isotope separation factors obtained decreased by increasing the temperature, and the factors for macroreticular resins were identical with those for the usual gel-type resins. However, the performance of isotope separation per unit band length in displacement chromatography was found to be improved by increasing the temperature and using macroreticular resins, because accelerating the interphase mass transfer caused the reduction of HETP (Height Equivalent to a Theoretical Plate).
Information is presented concerning reactor research activities; isotope geology; NERC radiocarbon laboratory; teaching activities; and reactor operation.
Nitrogens, Sulfurs, Isotopes, and Hydrocarbons Gases Elements Ions and Inorganic Acids Organic Compounds Co-eluting Organics Hopanes, Cholestanes, and Sterols Pesticides,...
Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).
An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.
According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.
Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.
Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.
The nuclear shapes of transitional Mo isotopes are calculated by means of a model based on the cranking approximation and the Strutinksy method. The recent experimental results of the high-spin spectroscopy and lifetime measurement of [sup 87]Mo are studied in detail and explained by the evolution of the [gamma]-deformation with the quasiparticle configurations. The shape calculations with the modified-harmonic-oscillator potential give a critical neutron number N [>=] 47 for the spherical shape of the Mo isotopes. (orig.)
The nuclear shapes of transitional Mo isotopes are calculated by means of a model based on the cranking approximation and the Strutinksy method. The recent experimental results of the high-spin spectroscopy and lifetime measurement of "8"7Mo are studied in detail and explained by the evolution of the #gamma#-deformation with the quasiparticle configurations. The shape calculations with the modified-harmonic-oscillator potential give a critical neutron number N #>=# 47 for the spherical shape of the Mo isotopes. (orig.).
The method of inversion of the eigenvalue problem previously developped for nuclei with axial symmetry is extended to asymmetric equilibrium shapes. This new approach to the asymmetric rotator model is applied to the odd-mass Iridium isotopes. A satisfactory and coherent description of the observed energy spectra is obtained, especially for the lighter isotopes. (orig.).
Values of frequency splittings in the lithium isotopes have been determined with the aid of laser-induced fluorescene in a supersonic beam, perpendicularly irradiated by a CW ring dye laser. The residual 2s-2p isotope shift has been found to bw 4721.8 +- 2.0 MHz, leading to a specific mass shift for the 2p level of -3610.8 +- 5 MHz.
This report was prepared in response to a request from the Nuclear Energy Research Advisory Committee (NERAC) subcommittee on ''Long-Term Isotope Research and Production Plans.'' The NERAC subcommittee has asked for a reply to a number of questions regarding (1) ''How well does the Department of Energy (DOE) infrastructure sme the need for commercial and medical isotopes?'' and (2) ''What should be the long-term role of the federal government in providing commercial and medical isotopes?' Our report addresses the questions raised by the NERAC subcommittee, and especially the 10 issues that were raised under the first of the above questions (see Appendix). These issues are related to the isotope products offered by the DOE Isotope Production Sites, the capabilities and condition of the ...
Results of americium-242m and americium-242 preparation by irradiating initial americium-241 at a reactor in the form of a diphtalocyanine complex are presented. The enrichment coefficient, equalling 10, has been obtained using the extraction method of recoil atom separation from the parent isotope. Application of the chromatographic column with Dowex-50 permits to increase the enrichment coefficient of isotopes upto 24.6.
In this report, the quantitative relation between the height equivalent to a theoretical plate (HETP) and the size of ion exchange resin is studied by enriching lithium isotopes with high pressure ion exchange displacement chromatography. The dependence of HETP on the size of the resin can be expressed as H = C x (anti r)sup( ) in which = 2.4 and it is found that Snyder's equation is suitable for such a system of isotope separation as may be explained by the simple displacement mechanism.
Two novel organic n-type semiconductors are investigated due to their function as electron acceptor for applications in organic electronic devices to widen the knowledge of how molecule structure influences the excitation processes in organic electronics. Bispyrenylfullerene and Octadecyl-Capronacidesterfullerene are C{sub 60} derivates with sidechains more featured compared to the commonly used[6,6] phenyl-C{sub 61}-butyric acid methyl ester (PCBM). In bulk heterojunction devices regioregular poly(3-hexylthiophene) (P3HT) was used as donor. The materials, pristine and in blend, were studied in view of light absorption, their quenching abilities of the P3HT photoluminescence as well as excited states. Furthermore, the spin state of the excited states was determined by light-induced electron spin resonance. Combining these complimentary experimental techniques, we obtained information on the generation of excited states, their nature, and the efficiency of the ...
GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-ntype, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on ...
The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the solar cell.
High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended optical response was not detected, most ...
Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1-xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high quality low-leakage Schottky contacts for low noise applications and for recessed gate high electron mobility transistors. In this work, the effect of postetch chemical treatment of the n-type Al0.22Ga0.78N surface on the performance of the Ni/Au based Schottky contact has been investigated. Three different types of chemical treatment: viz, reactive ion etching, reactive ion etching plus dipping in hot aqua regia, and reactive ion etching plus dipping in hot KOH, are studied. Detailed current-voltage studies of three different surface treated diodes and a comparison with as-deposited diodes reveal significant improvement in the diode ...
A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.
Parameters of permanent magnets result from the combination of intrinsic properties such as saturation magnetization, magnetic exchange, and magnetocrystalline energy, as well as microstructural parameters such as phase structure, grain size, and orientation. Reduction of grain size into nanocrystalline regime (#approx# 50 nm) leads to the enhanced remanence which derives from ferromagnetic exchange coupling between highly refined grains. In this study the fundamental phenomena, quantities, and structure parameters, which define nanophase permanent magnets are presented and discussed. The theoretical considerations are confronted with experimental data for nanocrystalline Sm-Fe-Ntype permanent magnets. (author)
The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.
Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.
Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...
The effect of powder particle sizes of n- and p-Bi2Te3 on the thermoelectric properties has been studied. The powder was formed from the each ingot and sieve into <63, 63-90 and 90-150{mu}m for p-type, and <355 and >355 {mu}m for n-type. Those powders are pressed followed by CIP, then sinterd at 773K for S. Effects of CIP on the densities were not so large such as 1-4% depending on the powder sizes. The Setback coefficients and electric conductivities for p-type were 110{mu}V/K and 0.8{times}10{sup 2}ohm{sup -1}m{sup -1} at 333K, while 18O{mu}V/K and 2.0{times}10{sup 4}ohm{sup -1}m{sup -l} for n-type, respectively. The thermal conductivity for n-type was 0.7W/mK leading to the figure of merit of 2.1{times}10{sup -3}(/K). The hybrid texture of the suitable amount of smaller and larger grains has a possibility of an improvement for thermoelectric properties. 10 refs., 5 figs., 5 tabs.
A study was made on extraction of a series of lithium and calcium salts by monopodands L with common formula R-C_6H_4-O-(CH_2CH_2O)_n-C_6H_4-R, where R - CH_2P(O)Ph_2, n 1-3. Extraction-chromatographic separation of lithium and calcium isotopes in systems of metal aquacomplex-solvatocomplex with L in organic phase was conducted. It was established that separation coefficients of "6Li/"7Li isotopes ranged between 1.003 #+-#0.001 and 1.017 #+-#0.002 at the maximal separation degree equal to 1.60. Separation of "4"0Ca/"4"4Ca isotopes was not fixed. 12 refs., 4 figs., 1 tab.
Lead is contained as trace element in uranium ores and propagates throughout the production process to intermediate products like yellow cake or uranium oxide. The lead isotopes in such material originate from two sources: natural lead and radiogenic lead. The variability of the isotopic composition of lead in ores and yellow cakes was studied and the applicability of this parameter for nuclear forensic investigations was investigated. Furthermore, the chemical impurities contained in these materials were measured in order to identify characteristic differences between materials from different mines. For the samples investigated, it could be shown, that the lead isotopic composition varies largely from mine to mine and it may be used as one of the parameters to distinguish between materials of different origins. Some of the chemical impurities show a similar pattern and support the conclusions drawn from the lead ...
A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...
The gadolinium isotopes are interesting for reactor applications as well as for medicine and astrophysics. The gadolinium isotopes have some of the largest neutron capture cross sections. As a consequence they are used in the control rod in reactor fuel assembly. From the basic science point of view, there are seven stable isotopes of gadolinium with varying degrees of deformation. Therefore they provide a good testing ground for the study of deformation dependent structure such as the scissors mode. Decay gamma rays following neutron capture on Gd isotopes are detected by the DANCE array, which is located at flight path 14 at the Lujan Neutron Scattering Center at Los Alamos National Laboratory. The high segmentation and close packing of the detector array enable gamma-ray multiplicity measurements. The calorimetric properties of the DANCE array coupled with the neutron time-of-flight technique enables ...
Lithium isotopes are used as the raw material of tritium which is the fuel for fusion power generation and the material for fusion reactors, accordingly those are indispensable for future nuclear fusion power generation. As for boron isotopes, the neutron absorption corss section is very large, therefore, they are used for shielding neutrons and controlling fast neutron reactors. In order to further develop the utilization of nuclear power, it is important to develop the technology for separating and refining light element isotopes in large amount. In fiscal year 1995, the relation of the ion sieve characteristics of inorganic ion exchanger and the behavior of lithium isotope separation was examined. The behavior of forming boron complex of polyol amine was examined by B-11 NMR. These experiments and the results are reported. It was shown to be feasible that lithium is adsorbed from seawater, and ...
The present review focuses on the isotropic composition in extra-terrestrial materials. There are many different factors in the variation in isotopic abundance between terrestrial and extra-terrestrial materials. Major factors in unusual isotopic composition are roughly grouped into three categories: factors associated with fractionation of isotopes, nuclear reaction or radioactive disintegration. Fractionation takes place due to differences in mass among various isotopes. There are physical and chemical factors. Physical ones include vaporization and condensation which meteorites may experience during their formation while the chemical ones include chemical reactions and chemical equilibration. There phenomena are mentioned as factors in the variation in isotopic ratio which is associated with nuclear reactions. An important nuclear reaction is the formation of elements that has ...
Study of the ground-state properties of Kr, Sr and Zr isotopes has been performed in the framework of the relativistic mean-field (RMF) theory using the recently proposed relativistic parameter set NL-SH. It is shown that the RMF theory provides an unified and excellent description of the binding energies, isotope shifts and deformation properties of nuclei over a large range of isospin in the Z=40 region. It is observed that the RMF theory with the force NL-SH is able to describe the anomalous kinks in isotope shifts in Kr and Sr nuclei, the problem which has hitherto remained unresolved. This is in contrast with the density-dependent Skyrme-Hartree-Fock approach which does not reproduce the behaviour of the isotope shifts about shell closure. On the Zr chain we predict that the isotope shifts exhibit a trend similar to that of the Kr and Sr nuclei. The RMF theory also predicts ...
Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...
We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...
Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...
In this article, the isotope geochemical study for Iceland is reviewed. Iceland is geologically unique because it is a subaerial exposure of Mid-Atlantic Ridge, which is caused by the interaction between the ridge and the Icelandic hot spot. To investigate what is happening beneath Iceland, many geochemical studies have been done. The geochemical studies using conventional Sr, Nd, Pb, He and O isotope tracers revealed the heterogeneity not only of the oceanic mantle, but also of the Icelandic hot spot mantle itself. Furthermore, the oxygen isotope studies revealed the reworking of the Icelandic crust which is altered by meteoritic water. The characterization of the Icelandic hot spot from the isotope geochemistry is very important in testing the hypothesis of the mantle-crust recycling. In near future, new tracers such as Li, B or Ce will be applied to this problem, and new constraints will be obtained. ...
For analysis of a small quantity of americium, it is necessary to separate from curium which has similar chemical property. As a chemical separation method for americium and curium, the oxidation of americium with pentavalent bismuth and subsequent co-precipitation of trivalent curium with BIP O{sub 4} were applied to analyze americium in irradiated MOX fuels which contained about 30wt% plutonium and 0.9wt% {sup 241}Am before irradiation and were irradiated up to 26.2GWd/t in the experimental fast reactor Joyo. The purpose of this study is to measure isotopic ratio of americium and to evaluate the change of isotopic ratio with irradiation. Following results are obtained in this study. (1) The isotopic ratio of americium ({sup 241}Am, {sup 242m}Am and {sup 243}Am) can be analyzed in the MOX fuels by isolating americium. The isotopic ratio of {sup 242m}Am and {sup 243}Am increases up to 0.62at% and ...
We have developed an ion probe technique for the in situ measurement of oxygen isotope ratios, {sup 18}O/{sup 16}O and {sup 17}O/{sup 16}O, with high spatial resolution in polished thin sections of silicate minerals. This technique allows the isotopic analysis of samples as small as picomoles of material which represents only 10{sup -7} of the sample size required by conventional fluorination oxygen isotope measurement methods and thus has wide application to the study of many terrestrial and extra-terrestrial samples that have heterogeneous oxygen isotope compositions on a scale of tens of micrometres. To illustrate the breadth of studies that are made possible by the ion probe, we report here oxygen isotope measurements from an authigenic quartz overgrowth obtained from the Penrith sandstone, UK, and measurements of magnetite grains from the Orgueil and Yamato 82162 carbonaceous ...
Liquid-liquid extractive separation of lithium isotopes was carried out in order to investigate the fluctuation of separation factors (a) as a function of salt concentrations in an aqueous phase. Two equations for separation factor (a_o_b_s) as a function of the concentration were introduced; one for the diluted region, and another for the concentrated region. In the former solution where hydrated lithium ions are predominant, 1n a_o_b_s = Ac + B, and in the latter where ion-pairs with anions are predominant, 1n a_o_b_s = Dc + E(c - F)"1"/"3 + G. Some guidelines are derived from the salt-specific constants A, B, D, E, F and G. The heavier isotopes are inclined to be in the more hydrated state in the diluted solution, while the lighter isotopes tend to be in a less hydrated state. In the concentrated solution, heavier isotopes are more likely to be in ion-pair form. Ionic association occurs from the ...
Plutonium-containing compounds vary widely in isotopic content, and as a result, the dose as function of isotopic content also varies considerably. Determination of the dose from neutrons, decay and capture gammas from plutonium in the form of compounds thus requires that the spontaneous fission and ({alpha},n) source and spectra from each individual isotope be known. To facilitate dose calculations from plutonium-containing compounds, we have calculated the spontaneous fission and ({alpha},n) sources and spectra for 1 g of each of the plutonium isotopes in the form of either PuF{sub 4} or PuO{sub 2}. As {sup 241}Am is often a component in a mixture of plutonium isotopic compounds, the source and spectra from 1 g of {sup 241}Am mixed with PuF{sub 4} or PuO{sub 2} has also been determined. Using these results, the neutron source and spectra may be determined for any sample ...
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.
In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.
Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.
Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.
The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society
We propose a novel method for ultrasensitive isotope analysis that combines magnetic mass selection, resonant charge-exchange neutralization, and resonant laser ionizaion. Our method attains high isotopic abundance selectivity by means of continuous multistage separation of ions stored in a small ring. For the environmentally interesting case of /sup 90/Sr versus /sup 88/Sr we estimate that sensitivity better than 10/sup -15/ for a throughput of 10/sup 13/ atoms/sec and an efficiency (after the ion source) greater than 10% are readily achievable.
A laboratory stream consisting of two stream sections interrupted by two pools was filled with a mixture of tap water and organically enriched water from rivers nearby. Bottom sediment material, Potamogeton pectinatus, macro-invertebrate organisms, as well as the mosquito fish, Aplocheilichthys johnstonii were collected from rivers around Johannesburg and introduced into the laboratory stream. After initial acclimatization, the distribution of the isotope "3"2P through this laboratory stream was followed. Absorption of this isotope by benthic algae, Potamogeton pectinatus, several macro-invertebrate organisms as well as Aplocheilichthys johnstonii was recorded.
The neutron-rich Fe isotopes from A=61 to 66 were studied through multinucleon transfer reactions by bombarding a "2"3"8U target with a 400 MeV "6"4Ni beam. Unambiguous identification of prompt #gamma# rays belonging to each nucleus was achieved using coincidence relationships with the ions detected in a high-acceptance magnetic spectrometer. The new data extend our knowledge of the level structure of Fe isotopes, which is discussed in terms of the systematics of the region and compared with large-scale shell-model calculations.
A weak shift of the isotope concentration ratio Li{sup 6}/Li{sup 7} was measured in the coexisting phases of the miscibility gap of lithium-ammonia solutions. Li{sup 6} is slightly enriched in the concentrated metallic phase (enrichment factor {alpha} = 1.009 {+-} 0.002). This effect can be enhanced in a counter-current column to yield any desired enrichment of the two isotopes. The counter current system and its operation were tested succesfully with a sodium-potassium-ammonia solution.
Special beam extraction channel is used at INR linac for isotope production. It starts from 160 MeV measuring and matching area of accelerator. This choice of beam extraction enables to direct to the target of isotope complex a proton beam of wide energy range up to 160 MeV. It is important for production of different types of nuclides. The measuring results of proton beam behavior in this region are presented. Required beam forming in 160 MeV measuring and matching area of accelerator and in beam extraction channel is discussed.
The performance of a high temperature ion source coupled to a helium gas-jet transport system for an efficient mass separation of neutron-rich alkaline earth and lanthanide isotopes is reported and the results of overall efficiency measurements using different cluster materials in the gas-jet are given. A fast, microprocessor controlled tape transport system for ..gamma..-spectroscopic studies on short-lived isotopes is described. Some results on the decay of 3.8sub(-s) /sup 152/Pr are presented. (orig.).
The performance of a high temperature ion source coupled to a helium gas-jet transport system for an efficient mass separation of neutron-rich alkaline earth and lanthanide isotopes is reported and the results of overall efficiency measurements using different cluster materials in the gas-jet are given. A fast, microprocessor controlled tape transport system for ..gamma..-spectroscopic studies on short-lived isotopes is described. Some results on the decay of 3.8sub(-s) /sup 152/Pr are presented.
The main scope of this study has been to calculate the future cost for decommission and dismantling the Isotope central at the Studsvik site using the OMEGA CODE. Detailed empirical information is used in the study for 'bench-marking' purposes, in such cases when there is a need to supplement and correct field data from the industry. In the present study, data has been retrieved and organized such that the estimated costs for decommissioning of the Isotope Central become transparent and reliable. This approach gives a preliminary qualitative indication about the accuracy of the cost estimate delivered by the industry
COMPLIS is an experimental facility designed to carry out spectroscopic studies on radioisotopes produced by disintegration of elements available at CERN's Booster-ISOLDE on-line isotope separator. During recent series of experimental runs, hyperfine structure measurements have yielded information on nuclear moments and deformations of platinum and iridium isotopes. For the first time, population by #alpha#-decay from Hg was exploited to investigate "1"7"8"-"1"8"1Pt--the most neutron-deficient Pt isotopes yet studied. Successful measurements have recently been carried out on "1"8"2"-"1"8"9Ir.
We discuss the algebraic structure of the generator coordinate method for triaxial quadrupole collective motion. The collective solutions are classified according to the representations of the permutation group of the intrinsic axes. Our method amounts to an approximate angular-momentum projection. We apply it to a study of the spherical-to-deformed-shape transition in light even strontium isotopes {sup 78-88}Sr. We find that triaxial configurations play a significant role in explaining the structure of the transitional isotopes {sup 80-82}Sr. (orig.).
A laser-induced plasma of alkali atoms was studied with a view to efficient recovery of isotope ions, with small charge exchange losses. The electron temperature was measured by the double-probe method for several kinds of excitation schemes, which gave the relationship between temperature and the energy given to ions by laser photons. A charge exchange process between lithium isotopes was also studied in an electromagnetic field. It was shown that optimum electrostatic and magnetic field strength exist which maximise the 'separative power'.
In order to understand the physical processes concerned with the selective heating by ion cyclotron resonance and with the subsequent collection of heated particles, experiments were carried out with the extraction of lithium samples, enriched with "6Li isotopes. Probe and integral extractors allow to collect enriched Li at the end of the selective heating region. Surface density distribution on the collector and local isotopic content of lithium are measured, as a function of the screen height and the retarding potential. Dependence of the collected amount of lithium and of its isotopic content on the value of the magnetic field is also measured. 4 figs., 2 tabs., 5 refs.
The carbon cycle is an important part of major biogeochemical cycles. Many techniques may be used to characterize carbon amounts and sources in the environment. Here we first review the most popular techniques for the determination of organic and inorganic carbon concentrations. Decarbonatation techniques are also reviewed in details since it is often an important part of organic carbon analysis. The second part of this paper addresses the use of carbon stable isotopes to characterize organic carbon sources and processes in the environment. An overview of general stable isotopes background and terminology is given as well as the most popular analytical techniques.
Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.
A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...
... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...
This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)
Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).
In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.
In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...
Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...
In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.
#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).
We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.
The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).
A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...
Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.
Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).
into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...
Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...
In this paper, steady-state isotopic transient kinetic analysis (SSITKA) is used to study two model reactions, CO oxidation and CO-NO reactions, on a typical formulation of a three-way auto-catalyst. Under steady-state conditions, abrupt switches in the isotopic composition of CO ("1"2C"1"6O/"1"3C"1"8O) were carried out to produce isotopic transients in both labeled reactants and products. Along with the determination of the average surface lifetimes and concentrations of reaction intermediates, an analysis of the transient responses along the carbon reaction pathway indicated that the distribution of active sites for the formation of CO_2 was bimodal for both reactions. Furthermore, relatively few surface sites contributed to the overall reaction rate.
New isotopic age determinations carried out with the rubidium-strontium method on granodioritic basement rocks from the Mecsek Mountains in Southeastern Transdanubia give further support to assumptions on a polyphase development of the Mecsek crystalline. As shown by initial Sr isotopic ratios, the protolith of the granodioritic assemblage of polymetamorphic-anatectic origin must have been strongly basic in its composition. The scatter of individual model ages obtained on total rock samples reflects the polymetamorphic-polytectonized character of the basement, and suggests that following a primary granitization process secondary events might have led to the total or partial recrystallization of the rocks in question. The tectonic development of the basement crystalline as reflected in the isotopic age data closed at about 270+-20 million years ago, with processes causing retrograde changes in the crystalline as a whole but ...
A high-precision Li isotope analysis was developed for determining the Li"+ ion emitted from lithium phosphate as an ion source material by a Re double-filament ionization method in the thermal ionization mass spectrometry. In this method, Li isotopic fractionation is distinctly less sensitive to the filament temperature than those in the previous methods, and stable and high ion beam intensity of more than 8 x 10"-"1"1 A for "7Li is obtained. These advantages in determining the "7Li/"6Li ratio result in the analytical reproducibility of 0.26 per mille (1#sigma#). Furthermore, the sample preparation is simple and the low temperature (850degC) required by this method ensures the analysis of the isotopic composition of small amounts of Li with less influence of Li contamination to the sample, compared with the previous methods. (author).
Author.The geochemical and isotopic study, based on the analysis of twenty water samples from well in the coastal plain of Sarafand (South-Lebanon), permit to eliminate the hypothesis of marine intrusion in this aquifer. The increase of salinity observed in certain wells is due to the contamination of cretaceous aquifer water by the quaternary formations. The two poles of mixing are respectively characterized: by weak tritium contents (between 2 and 3 UT) and a value of stable isotopes (-5,9<0,18<-5,5) corresponding to the appearance of cretaceous formation area; by the high tritium contents and enrichment relative to heavy isotope in the mineralized water of superficial formations. On the other hand, the isotope contents permit the set a rapid renewal of the cretaceous aquifer water due to quick circulation in the Karstic system
We have determined the nuclear charge radius of 11Li by high-precision laser spectroscopy. The experiment was performed at the TRIUMF-ISAC facility where the 7Li-11Li isotope shift was measured in the 2s to 3s electronic transition using Doppler-free two-photon spectroscopy with a relative accuracy better than 10 5. The accuracy reached in previous experiments on the other lithium isotopes was improved. Most of the isotope shifts measured in the experiment are due to difference in the mass of the nuclei but small contributions are produced by the change in proton distribution, QED and relativistic effects have to be taken into account as well. By comparing the experimental results with sophisticated atomic calculations of the mass dependent effect the nuclear charge radii of the lithium isotopes are found to decrease monotonically from 6Li to 9Li while the nuclear charge radius of 11Li is about 11% ...
The energy level schemes of tin isotopes produced in the heavy ion reactions are presented. The using of #gamma# spectroscopy technique is also described. 4 refs, 12 figs.
Neutron yield from the "6","7Li + d reaction has been investigated. The results obtained are compared with the published data with some theoretical models.
In order to get the separation of natural isotopes of lithium by electrolytic amalgamation, an electrolytic cell with a confined mercury cathode was used to obtain data for the design of a separation stage. The initial work was followed by the design of a moving mercury cathode electrolytic cell and three experiments with six batches stages were performed for the determination of the elementary separation factor. The value obtained, 1.053, was ill agreement: with the specialized literature. It was verified in all experiments that the lithium - 6 isotope concentrated in the amalgam phase and that the lithium - 7 isotope concentrated in the aqueous phase. A stainless-steel cathode for the decomposition of the lithium amalgam and the selective desamalgamation were also studied. In view of the results obtained, a five stages continuous scheme was proposed. (author)
The location of defective LMFBR fuel pins by the determination of gas tag isotopic ratios is discussed. The application of this method to the FFTF Reactor briefly described.
A tunable diode laser is used to obtain infrared spectra of carbon dioxide in biological materials. The spectral resolution is sufficient to readily distinguish differing isotopic species. The technique may prove useful in clinical tests.
... M. Taylor, T. Kurt Kyser. (2009) Feather isotope analysis discriminates age-classes of Western, Least, and Semipalmated sandpipers when plumage ... ...
A brief review of standard big bang nucleosynthesis theory and the related observations of the light element isotopes is presented. Implications of BBN on chemical evolution and constraints on particle properties will also be discussed.
Recently, the precise isotope ratios of some refractory elements in meteorites have been reported using inductively coupled plasma mass spectrometry. The in situ decay of {sup 182}Hf (T{sub 1/2}=9 Myr), which was produced at the latest nucleosynthesis, is recognized in many meteorites as isotopic anomalies of its daughter isotope, {sup 182}W. The degrees of relative {sup 182}W isotopic deviation in extra-terrestrial and terrestrial silicate samples vary from +0.3% to {+-}0% related to the size of their parent bodies. One ready interpretation of its correlation is the difference in timing of metal-silicate separation in the parent bodies. Between the earth and meteorite parent bodies, the difference is calculated to be about four times of the half-life of {sup 182}Hf, equivalent to 36 Myr. (author)
The invention is associated with organic geochemistry and may be used in conducting geological exploration operations for oil and gas. The purpose of the invention is to increase the precision of the method for determining the genesis of bitumoids. This is achieved through determining the isotopic composition of nickel or vanadium and from the anomalously high values of the isotopic ratio of Ni-58 to Ni-62 or from the anomalously low values of the isotopic ratio of vanadium, a conclusion is drawn about the epigenetic nature of the bitumoids. The proposed method is characterized by greater resolution due to the fact that the values of the isotopic ratios for oil bearing and water bearing structures are essentially not superimposed. The proposed method exceeds the resolution of metal metering studies in conducting geological exploration for oil and gas by 2 to 3 times.
Cadmium telluride single crystals were grown heavily doped with chloride by the THM method. The resulting crystals were n-type with free carrier concentrations of the order of 10('12)/cm at room temperature. Hall effect studies revealed room temperature mobilities between 30 and 350 cm('2)/v-sec and resistivites between 2 x 10('3) and 10('4) ohm-cm. Studies were made of the gamma and alpha counting characteristics of these crystals with metal, metal-semiconductor, and metal-insulator electrodes. It was found that the MIS and MSS structures resulted in significant improvement over the MS structures in counting, signal-to-noise and energy resolution.
Passive films formed on stainless steels in a borate buffer solution (pH 9.2) have been investigated by capacitance measurements and photoelectrochemistry. The study was carried out on films formed on AISI type 304 and 316 stainless steels and high purity alloys with differing chromium, nickel, and molybdenum contents. Complementary research by Auger analysis shows that the passive films are composed essentially of an inner chromium region in contact with the metallic substrate and an outer iron oxide region developed at the film/electrolyte interface. The semiconducting properties of the passive films are determined by those of the constituent chromium and iron oxides which are of p-type and n-type, respectively. Thus the influence of the alloying elements on the semiconducting properties of the passive films is explained by changes in the electronic structure of each of these two oxide regions.
Early failure of an induction-hardening carbon steel pipe, which was used to transport tailing slurry, was caused by pitting corrosion. The microstructure on the internal pipe surface layer was found being a mixture of martensite, pearlite and ferrite. In this work, the pitting corrosion behavior of each constitute in the microstructure of steel is investigated with electrochemical noise analyses; the electronic properties of passive films were studied with Mott-Schottky relationship. It is found that the passive films formed on the materials under investigation are highly disordered n-type semiconductors. The high-to-low pitting susceptibility is ferrite > martensite > pearlite. The pitting resistance is related to the semiconductive nature of the passive film formed on each constitute. The pitting susceptibility increases with the donor concentration in the passive films. (author)
This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.
This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.
Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).
Using carbon-paste-CuFeS{sub 2} electrodes and a cyclic voltammetric technique, it was found that a large number of intermediate electrochemical oxidation reactions were associated with the dissolution of chalcopyrite in presence and absence of bacteria. The effects of concentrations of copper, ferrous and ferric ions, as well as of agitation on the peaks of cyclic voltammograms were measured. It was established that chalcopyrite oxidation was solid-state controlled as suggested by the data of chronopotentiometric and chronoamperometric measurements. The activation energy of solid state diffusion of chalcopyrite leaching was determined by the Sand's method to be {triangle}E{sub a} = 20.5 kJ. The leaching mechanism is discussed in terms of solid-state properties (energy bonding) of the n-type semiconductor chalcopyrite and energy density states of redox systems of acidic bacterial leach media. A generalized model for the mechanism of chalcopyrite leaching ...
Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.
The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.
The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.
The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)
A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)
Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.
We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.
The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed
The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.
Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.
Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.
The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.
The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'
The individual contributions in these proceedings are indexed separately. Main topics covered include the measurement of biological nitrogen fixation, studies of soil organic matter, investigations of nutrient uptake and use by plants, studies of plant metabolism and new methodologies in the analysis of stable isotopes. Refs, figs and tabs.
The intensity of luminescence from the "2E state of Cr(bpy)_3"3"+ (bpy = 2, 2'-bipyridine) is lower in D_2O, although the "2E lifetime is unchanged, indicating that the "4T_2 (precursor to "2E) is sensitive to the isotopic nature of the solvent. A photophysical mechanism is proposed for Cr(NN)_3"3"+ complexes.
High-spin states in {sup 202}Pb and {sup 203}Pb have been investigated by in-beam {gamma}-ray spectroscopy following the reaction {sup 198}Pt({sup 9}Be,xn). A search for magnetic rotational bands in these isotopes confirmed one of the two bands previously assigned to {sup 202}Pb and revealed a new band in this isotope. No evidence for magnetic rotation has been found in {sup 203}Pb. (orig.)
Most diffusion phenomena in solids can be understood (or sometimes misunderstood) on a purely classical model. For light interstitials (hydrogen isotopes, the positive muon, and potentially He) there may be anomalous temperature dependences, and isotope effects, and anomalous response to electric fields and temperature gradients. Some of these anomalies are quantal in origin, and will be discussed. (author).
A model-based method has been previously developed to estimate and compensate for the crosstalk and downscatter contamination in simultaneous 123I∕99mTc dual-isotope SPECT...Full Text Available
The thesis explains the development of a mass spectrometerical isotope dilution analysis (MS/DA) for determining trace amounts of Tc. The Tc-97 isotope has been prepared by in-core irradiation of Ru of natural isotopic composition, and used as the indicator isotope. For separation of Tc-97 from the Ru matrix, a method has been developed to quantitatively separate Tc-97 from a high Ru surplus. For determining the isotope ratio for the MS/DA, a mass spectrometrical measuring technique has been found which allows reproducible measurement of the Tc-99/Tc-97 isotope ratio. Positive and, for the first time, also negative thermoionisation has been used as a method of selective ionisation of Tc. The applicability of the MS/DA for Tc trace analysis has been verified using two Al foils doped with Tc-99 or Mo-98, respectively. These have been irradiated in a nuclear ...
Presently available relativistic and nonrelativistic effective interactions do not predict the same behavior for the isotope shifts in the Pb region.We analyze this difference and find that it is related to the characteristics of the spin-orbit term used in the parametrizations. We show that a simple modification of the spin-orbit contribution to the nonrelativistic Skyrme functional solves this problem. ((orig.))
Projectilelike fragments following the 80 MeV /sup 16/O+/sup 27/Al reaction have been detected using a Bragg-curve spectroscopy ionization chamber (BCS-IC). The atomic number is deduced from the Bragg-peak amplitude. Nitrogen isotopes are clearly resolved using either range or energy loss data. This is the first application of the BCS method for complete ion identification in a heavy-ion-induced reaction.
Projectilelike fragments following the 80 MeV "1"6O+"2"7Al reaction have been detected using a Bragg-curve spectroscopy ionization chamber (BCS-IC). The atomic number is deduced from the Bragg-peak amplitude. Nitrogen isotopes are clearly resolved using either range or energy loss data. This is the first application of the BCS method for complete ion identification in a heavy-ion-induced reaction.
A "9"2Mo beam with an energy of E/A=70 MeV has been used to produce new isotopes near the proton drip line. The Michigan State University National Superconducting Cyclotron Laboratory A1200 fragment separator was used to detect the new isotopes "7"8Y, "8"2Nb, "8"5Mo, "8"6Tc, and "8"9","9"0Ru.
A {sup 92}Mo beam with an energy of {ital E}/{ital A}=70 MeV has been used to produce new isotopes near the proton drip line. The Michigan State University National Superconducting Cyclotron Laboratory A1200 fragment separator was used to detect the new isotopes {sup 78}Y, {sup 82}Nb, {sup 85}Mo, {sup 86}Tc, and {sup 89,90}Ru.
It is shown that observations of the lithium isotope ratio in high surface temperature Population II stars may be critical to cosmological nucleosynthesis models. In particular, decaying particle scenarios as derived in some supersymmetric models may stand or fall with such observations. 18 references.
Evaluation procedures used to produce sets of evaluated data for the 33 heavy isotopes that fall in the range Z = 90 to Z = 98 are described. At the beginning of the discussion for each individual isotope, a computer-generated listing is given which summarizes the main properties of the data sets that are contained in the evaluation. (RWR)
Hydrology and hydrogeochemical are auxiliary techniques to valid conceptual hydrogeology an recharge models. Stable isotopes from water trace sources and path flow and Tritium indicates age. This paper is about the use of D 18, D2H y 3H to study the aquifer system on Bajo Cauca antioqueno.
We have performed precision measurements in a magneto-optical trap of the 7P1/2 hyperfine structure of the isotopes 209-210Fr. The ratio of these hyperfine constants to the previously measured 7S1/2 ground state values reveals a significant hyperfine anomaly. This anomaly results from the different radial dependence of the electron density in the two atomic levels. The measurements are sensitive to changes in the radial distribution of the neutron magnetism.
Isotope ratios of cellulose and cellulose nitrate from aquatic Crassulacean acid metabolism (CAM) and non-CAM plants were determined. Cellulose oxygen istope ratios for all plants that grew together...Full Text Available
Prompt neutron spectra for Am isotopes ({sup 241}Am, {sup 242m}Am, {sup 243}Am) were calculated on the basis of a modified version of the Madland-Nix model combined with multimodal fission model. The predicted spectra were found to be in fair agreement with recent data. (author)
Americium 242m and americium 242 were prepared by reactor irradiation of americium 241 as its diphthalocyanine complex. The product atoms were extracted from the parent isotope at an enrichment factor of 10. A Dowex 50 chromatographic column raised the factor to 24.6.
Americium 242m and americium 242 were prepared by reactor irradiation of americium 241 as its diphthalocyanine complex. The product atoms were extracted from the parent isotope at an enrichment factor of 10. A Dowex 50 chromatographic column raised the factor to 24.6.
A possibility of short-lived isotopes production in inter-tank section between the first and the second drift tube tanks (20.45 MeV) in INR linac is considered. At the initial stage the main efforts are concentrated on production of fluorine-18 used for positron emission tomography. The results of beam forming calculations, target heating calculations, equipment activation calculations as well as installation configuration and design are presented.
In a cold fusion method by electrolysis, a hydrogen occluding material mainly comprising vanadium is used as a material for a negative electrode, and lithium isotopes are incorporated in the material by more than 93%. That is, the ratio of lithium 7 ("7Li) isotope is increased to higher than the natural existent ratio, so that tritium ("3H) concentration in the hydrogen occluding material can be increased, to attain energy at high efficiency. (T.M.).
An energy sensitive Si(Li) detector XRF analyzer built by ATOMKI, Hungary, has been applied for various analytical purposes in alumina production at the Almasfuezitoe Alumina Company, Hungary. Specifically, the CaO content in red mud was determined by the new XRF technique using isotope excitation sources. The analysis of other components is under way. (R.P.).
In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...
Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...
A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...
Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...
Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...
The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...
Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...
Anorthosites are rocks consisting almost completely of calcic plagioclase, usually from andesine to labradorite. They are not widespread, and until recently were of no economic interest. However, with the advance of the new global tectonics, which has excited considerable interest in the structure and composition of upper-mantle rocks, interest in the anorthosites has grown. This has particularly been the case since the discovery of anorthosites on the moon, where they appear to be more widespread than on the earth. Data have recently been obtained on the strontium isotope compositions of anorthosite intrusions in the Dzhugdzhur-Stanovoy zone and in the rocks surrounding them, which have revealed some unexpected features. The paper describes the geological features of anorthosites, initial concepts on strontium isotope geochemistry, strontium isotope compositions of this region, and discusses some genetic consequences from ...
The diagnostic accuracy is compared of the dual-isotope protocol and the conventional "2"0"1Tl protocol, for detection of the coronary artery disease (CAD) using data on a total of 69 patients after myocardial infarction (MI). The "2"0"1Tl protocol was used to examine 44 patients, the dual-isotope protocol was used with 25 patients. All patients were examined by coronarography; a narrowing of the artery by more than 50 % was considered significant for CAD. The sensitivity, specificity and diagnostic accuracy was 97.7 %, 100 % and 97.7 % resp. for the "2"0"1Tl protocol, and 95.2 %, 75 % and 92 % resp. for the dual-isotope protocol. A higher diagnostic accuracy of the dual-isotope protocol has not been proven, and the "2"0"1Tl protocol continues to be used for examinations of patients after MI
Laser spectroscopy measurements have been performed on neutron-deficient iridium isotopes. The hyperfine structure and isotope shift of the optical Ir I transition 5d"76s"2 "4F_9_/_2#->#5d"76s6p "6F_1_1_/_2 have been studied for the "1"8"2"-"1"8"9Ir, "1"8"0Ir"m and "1"9"1","1"9"3Ir isotopes. The nuclear magnetic and quadrupole moments were obtained from the hyperfine splitting measurements and the changes of the mean square charge radii from the isotope shift measurements. A large deformation change between "1"8"7Ir and "1"8"6Ir and between "1"8"6Ir"m and "1"8"6Ir"g has been observed.
Due to severe drought conditions in Pakistan over the past several years, most of the areas are facing extinction of its potable water reserves and inadequate replenishment of groundwater aquifers. Due to over exploitation, the groundwater flow dynamics is changing and water quality is degrading due to induced infiltration from polluted surface sources. Isotope hydrology is relatively a new discipline having great potential for studying various water-related problems. RIAD, PINSTECH has established analytical facilities for commonly used environmental isotopes and applied to investigate various hydrological problems. This paper briefly describes practical examples on recharge mechanism and dating of groundwater in Lahore and Ziarat areas using isotopes like deuterium (/sup 2/H), Oxygen-18 (/sup 18/O), Tritium (/sup 3/H) and CFCs in water. In Lahore, the areas having different contribution of the river Ravi in groundwater ...
Burnable poisons are used in nuclear reactors to produce a more level distribution of power in the reactor core and to reduce to necessity for a large control system. An ideal burnable poison would burn at the same rate as the fuel. In this study, separation of neutron-absorbing isotopes was investigated in order to eliminate isotopes that remain as absorbers at the end of fuel life, thus reducing useful fuel life. The isotopes Gd-157, Dy-164, and Er-167 were found to have desirable properties. These isotopes were separated from naturally occurring elements by means of plasma separation to evaluate feasibility and cost. It was found that pure Gd-157 could save approximately $6 million at the end of four years. However, the cost of separation, using the existing facility, made separation cost- ineffective. Using a magnet with three times the field strength is expected to reduce the cost by a factor of ...
Optical frequency comb technology has been used in this work for the first time to investigate the nuclear structure of light radioactive isotopes. Therefore, three laser systems were stabilized with different techniques to accurately known optical frequencies and used in two specialized experiments. Absolute transition frequency measurements of lithium and beryllium isotopes were performed with accuracy on the order of 10{sup -10}. Such a high accuracy is required for the light elements since the nuclear volume effect has only a 10{sup -9} contribution to the total transition frequency. For beryllium, the isotope shift was determined with an accuracy that is sufficient to extract information about the proton distribution inside the nucleus. A Doppler-free two-photon spectroscopy on the stable lithium isotopes {sup 6,7}Li was performed in order to determine the absolute frequency of the 2S {yields} 3S ...
Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to ntype Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of {approximately} 6 {times} 10{sup {minus}6} {Omega}-cm{sup 2} and {approximately} 1 {times} 10{sup {minus}5} {Omega}-cm{sup 2} have been obtained on Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P respectively (both doped to {approximately} 2 {times} 10{sup 18} cm{sup {minus}3}). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al{sub 0.5}In{sub 0.5}P and n-Ga{sub 0.5}In{sub 0.5}P are presented.
New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. Homojunction GaAs solar cells were fabricated using several ...
Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...
The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...
Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...
Lherzolite-bearing basanitic magmas of Quaternary age have erupted to form maars, lava/cinder cones and lava flows in two volcanic fields (Ventura and Santo Domingo) in the central Mexican state of San Luis Potosi. The systematics of the radiogenic isotopes of Sr, Nd, and Pb and the relationship between these parameters and elemental compositions are used to investigate the petrogenesis of the volcanic rocks and the nature of their mantle sources. Sr and Nd isotopic data are presented for 19 basanitic rocks, 5 kaersutites, and 6 lherzolitic xenoliths; Pb data presented for the same 19 volcanic rocks and 4 of the 5 kaersutites. The isotopic compositions for all of these samples fall within the mantle range defined by MORBs and OIBs. The basanites generally plot within the OIB field on isotopic diagrams; most of the kaersutites are displaced to slightly more-depleted (i.e. MORB-like) values than the ...
The distribution of carrier free lead-203 between plasma and cells of canine blood in vitro was measured. Activity in the plasma decreased to less than 5% of the initial blood activity during the first 15 min and then exponentially with a half time of 160 min. Incubation in cell free plasma before addition to whole blood transformed the isotope, decreasing the amount subsequently associated with cells. In animal studies, activity was measured in plasma, blood cells, urine, and feces after exposure to lead-203. In one group, the animals were exposed by intravenous injection of dilute citric acid solutions of isotope. In a second group, carrier free isotope which had been transformed by incubation in plasma was injected intravenously. The kinetics of the distribution of the isotope differed between the two experimental groups. After injection of the transformed lead, the lead-203 content of the blood cell ...
The Archean core of the Laramide Wind River uplift records evidence of at least three major granitoid-forming episodes. The oldest, the Dry Creek gneiss (DCG), was emplaced by 2.8 Ga and occupies the northeastern part of the range. Mafic, pelitic and ultramafic inclusions occur in the DCG. Elsewhere in the Wind River Mountains there is evidence for crustal components as old as 3.8 Ga. The Bridger batholith (BB), intruded at 2.67 Ga, is found in the west-central Wind River Mountains. The Wind River batholith (WRB) refers to the youngest Late Archean granodiorites and granites which are found throughout the range and includes granitoids previously name the Louis Lake, Bears Ears, Popo Agie, and Middle Mountain intrusions. Although granitoids of the Wind River batholith have been dated at 2.63 and 2.55 Ga, they are considered together here because there is a complete gradation in rock type and because definite intrusive contacts are scarce. The DCG, BB, and WRB each span the ...
The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...
High-precision laser spectroscopy on lithium isotopes is of fundamental interest, experimentally as well as theoretically. The lithium atom has long served as a test system for the calculation of various atomic properties in few-electron atoms and significant advances have been made in the last decade[1-3]. Recently, calculations of transition energies for the 22S1/2 -> 32S1/2 and the 22S1/2 -> 22P1/2, 3/2 transitions and of the mass-dependant isotope shift (IS) in these transitions have been reported with a relative accuracy of better than 1 X 10-7 and 5 x 10-6, respectively[4, 5]. These calculations are the foundation for experimental efforts, currently underway at GSI Darmstadt, Germany, to determine the root-mean-square (rms) charge radius of the unstable lithium isotopes[6, 7]. The basic principle is that if all mass-dependent contributions to the IS can be calculated with sufficient accuracy, the ...
In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)
The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...
A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}
Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.
Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.
More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992
Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.
There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).
In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.
Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)
Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).
New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)
A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).
Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.
In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.
The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.
An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...
The operation of a nuclear power reactor necessarily implies the consumption or burnup of reactor fuel by fission and capture, which gives rise to a decrease in the reactivity of the reactor. The effect of americium formation on the criticality of a thermal power reactor using two types of fuel is studied. The three-dimensional core calculation is used to calculate the production of the transuranium isotopes and their effect on the effective multiplication factor (K[sub eff]). This effect cannot be neglected for thermal power reactors with UO[sub 2]-PuO[sub 2] fuel (3.11% after 70 weeks of operation). The effect of the transuranium isotopes on the K[sub eff] for a thermal power reactor with UO[sub 2] fuel is about 0.0018% and can be ignored. (author).
The operation of a nuclear power reactor necessarily implies the consumption or burnup of reactor fuel by fission and capture, which gives rise to a decrease in the reactivity of the reactor. The effect of americium formation on the criticality of a thermal power reactor using two types of fuel is studied. The three-dimensional core calculation is used to calculate the production of the transuranium isotopes and their effect on the effective multiplication factor (K_e_f_f). This effect cannot be neglected for thermal power reactors with UO_2-PuO_2 fuel (3.11% after 70 weeks of operation). The effect of the transuranium isotopes on the K_e_f_f for a thermal power reactor with UO_2 fuel is about 0.0018% and can be ignored. (author).
The neutron-rich Mn isotopes from A=59 to 63 have been studied through multi-nucleon transfer reactions by bombarding a {sup 238}U target with a beam of {sup 70}Zn at an energy of E{sub lab}=460 MeV. Prompt {gamma} rays measured by the CLARA array have been identified unambiguously for each nucleus, using coincidence relationships with ions detected in the high-acceptance magnetic spectrometer PRISMA. The new data extends the knowledge of the low-lying level structure of Mn isotopes, which is discussed in terms of the systematics of the region. Results are compared with large-scale shell-model calculations using different effective interactions and valence spaces.
The neutron-rich Mn isotopes from A=59 to 63 have been studied through multi-nucleon transfer reactions by bombarding a "2"3"8U target with a beam of "7"0Zn at an energy of E_l_a_b=460 MeV. Prompt #gamma# rays measured by the CLARA array have been identified unambiguously for each nucleus, using coincidence relationships with ions detected in the high-acceptance magnetic spectrometer PRISMA. The new data extends the knowledge of the low-lying level structure of Mn isotopes, which is discussed in terms of the systematics of the region. Results are compared with large-scale shell-model calculations using different effective interactions and valence spaces.
Target materials for inertial fusion energy (IFE) power plant designs might be selected for a wide variety of reasons including wall absorption of driver energy, material opacity, cost and ease of fabrication. While each of these issues are of great importance, target materials should also be selected based upon their safety and environmental (S and E) characteristics. The present work focuses on the recycling, waste management and accident dose characteristics of potential target materials. If target materials are recycled so that the quantity is small, isotopic separation may be economically viable. Therefore, calculations have been completed for all stable isotopes for all elements from lithium to polonium. The results of these calculations are used to identify specific isotopes and elements that are most likely to be offensive as well as those most likely to be acceptable in terms of their S and E characteristics.
This is one of an annual collection of reports presenting data from the Geochronology Section of the Continental Geoscience Division of the Geological Survey of Canada (GSC). The main purpose of this collection is to make geochronological and other radiogenic isotope data produced by the section available promptly to the geological community. Reports make full presentation of the data, relate these to field settings and make comparatively short interpretations. Other geochronological and isotope data produced in the laboratory but published in outside journals or separate GSC publications are summarized at the end of this report. Report 5 contains 24 papers from most regions of Canada, but particularly from British Columbia. The Geochronology Laboratory has, over the years, provided substantial U-Pb dating for the Cordilleran Division of the Geological Survey of Canada in Vancouver, and the results of a number of these studies are presented ...
Elastic and inelastic proton scattering has been measured in inverse kinematics on the unstable nucleus {sup 40}S. A phenomenological DWBA analysis yields a quadrupole deformation parameter {beta}{sub 2} = 0.35 {+-} 0.05 for the 2{sup +}{sub 1} state. Consistent phenomenological and microscopic proton scattering analyses have been applied to all even-even Sulfur isotopes from A = 32 to A = 40. The microscopic analysis used microscopic collective model densities and a modified Jeukenne-Lejeune-Mahaux effective interaction. This analysis suggests the presence of a neutron skin in the heavy sulfur isotopes. The analysis is consistent with normalization values for {lambda}{sub {upsilon}} and {lambda}{sub {omega}} of 0.95 for both the real and imaginary parts of the JLM potential. (author)
This study concerns the Souss upstream basin. The objective is to investigate the characteristics of surface water and groundwater, to assess the impact of artificial recharge as reinforcement of the natural replenishment and assess the renewal of groundwater under semi-arid area. Two major water types are observed: (i) surface waters and upstream springs (least mineralized) and (ii) all groundwater samples (prevailing calcium and magnesium bicarbonate water type). Water isotopes show a low evaporation of precipitations during infiltration. Impoverishment in heavy isotopes is the characteristic of mountain rainfalls, or of a climate colder and wetter than present. Carbon-14 activities (34-94 pmc) indicate a long residence time. The artificial recharge is low compared to the reservoir volume, due to which the renewal rate is also low.
The known biological functions of RNA have expanded in recent years and now include gene regulation, maintenance of sub-cellular structure, and catalysis, in addition to propagation of genetic information. As for proteins, RNA function is tightly correlated with structure. Unlike proteins, structural information for larger, biologically functional RNAs is relatively limited. NMR signal degeneracy, relaxation problems, and a paucity of long-range {sup 1}H-{sup 1}H dipolar contacts have limited the utility of traditional NMR approaches. Selective isotope labeling, including nucleotide-specific and segmental labeling strategies, may provide the best opportunities for obtaining structural information by NMR. Here we review methods that have been developed for preparing and purifying isotopically labeled RNAs, as well as NMR strategies that have been employed for signal assignment and structure determination.
The proton and neutron densities, root-mean-square (rms) radii of proton density and neutron density, and neutron skin thickness of "4"-"1"0He, "6"-"1"1Li, and "7"-"1"2Be isotopes are calculated using Skyrme-Hartree-Fock method with SLy4, SLy5, SLy6, and SLy7 force parameters. The evaluated results are compared with experimental data. Also, the results of halo nuclei ("6","8He, "1"1Li, and "1"1Be) are compared with the results of other isotopes for selected nuclei having the same neutron configuration.
Studies on the kinetics of the distribution of lead-203 in body fluids have been carried out in vitro, and in animal studies using beagle dogs. In vitro, the distribution of carrier free lead-203 between plasma and cells of canine blood at 37"0C was measured after the addition of isotope. In animal studies, activity in plasma was measured for about 150 hours, and activity in blood cells, urine and feces measured for about 400 hours after exposure to lead-203. Linear compartmental models for distribution of the isotope are presented for both in vitro and in vivo experimental systems. The models contain compartments for both untransformed lead, for isotope added in saline or citric acid, and transformed lead, as obtained by lead-203 incubation in plasma.
The dependence was determined of the decontamination factor ratio found in the presence of a carrier and in a carrier-free system on carrier concentration at different concentrations of a complexing agent in a solution. Bearing balls were used as contamination materials while a mixture of "1"5"2Eu and "1"5"4Eu isotopes was used as a contaminant, citric acid in a concentration of 5x10"-"3 to 1x10"-"1 mol/dm"3 as a complexing agent, and Eu, lanthanum and aluminium at a concentration range of 1x10"-"5 to 1x10"-"2 mol/dm"3 as carriers. While no increase in the decontamination factor was found for aluminium, a considerable increase was observed in the isotopic and homologic carriers and the concentration dependence of the carrier reached the maximum. An equation was derived explaining the effect by the isotope exchange between the contaminant and the carrier and by the reaction between the carrier and the complexing agent. ...
The Early Bronze Age barrows at Irthlingborough and Gayhurst in central England are notable for the large number of cattle (Bos taurus) remains associated with their human Beaker burials. Previous work using strontium isotope analysis has indicated that most of the cattle analysed, and one aurochs (Bos primigenius), were of local origin [Towers, J., Montgomery, J., Evans, J., Jay, M., Parker Pearson, M., 2010. An investigation of the origins of cattle and aurochs deposited in the Early Bronze Age barrows at Gayhurst and Irthlingborough. Journal of Archaeological Science 37, 508-515.]. In this study, stable isotope analysis of enamel and bone was carried out to investigate whether the mature cattle had experienced similar husbandry practices, climate and environment. Bulk carbon, nitrogen a...
The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...
By isomorphous replacement of silicon by phosphorus the authors have synthesized crystalline aluminosilicophosphates with structures of the zeolites type A and faujasite. They determine the adsorption capacity of specimens treated at 575-1275/sup 0/K. They show that the thermal stability and acid resistance of aluminosilicophosphates depend on the quantity of phosphorus in their structure.
As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...
An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.
Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.
Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.
A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} ...
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...
twenty 350 V, 2.5 mF aluminum electrolytic capacitors with 10.8 mH inductors made of multi-strand wire. The PFN discharge was controlled using an silicon ...
The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...
The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...
Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.
Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.
... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...
The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...
Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At ...
An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.
This paper reports that the co-deposition of chromium and silicon into a 2.25Cr-1.0Mo-0.15C steel, alloy 800, and type 304 stainless steel has been achieved using the pack cementation process. The ferritic coating produced on the 2.25 Cr-1.0Mo steel was approximately 225 {mu}m (9 mils) thick, whereas the inward diffusion of chromium and silicon produced a two-phase structure of ferrite and austenite for type 304. Chromium and silicon were incorporated into the austenitic solid solution upon diffusion into alloy 800. All coatings had approximately 25 to 35 wt% Cr and 2 to 3% Si at the surface. Cyclic oxidation testing in air of the coated 2.25Cr-1.0Mo steel (T = 700{degrees} C) and type 304 (T = 1035{degrees} C) showed a dramatic decrease in the oxidation kinetics compared to the original uncoated alloys. The cyclic oxidation of alloy 800 was also improved.
The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available
An earlier representation of the radial distribution of dose about the path of a heavy ion in liquid water is modified and extended to include silicon, lithium fluoride, and sodium iodide. 6 refs., 5 figs., 1 tab.
ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...
of the supplier of pulled p-type silicon material. of G-6 and E 8 centers irradiated in the 1 t o 3 MeV range. tions w i l l be performed using the General ...
... M. Taylor, T. Kurt Kyser. (2009) Feather isotope analysis discriminates age-classes of Western, Least, and Semipalmated sandpipers when plumage ... ...
ObjectivesTo assess the distribution and risk factors of depleted uranium uptake in military personnel who had taken part in the invasion of Iraq in 2003.MethodsSector...Full Text Available
Using nitrogen-13 initial measurements have been made of rumen ammonia-nitrogen pool size and turnover, and rate of incorporation of ammonia into microbial protein. It is also feasible to measure the rate of incorporation of absorbed ammonia into urea and the appearance of label in saliva.
Although deep-sea cephalopods are key marine organims, their feeding ecology remains essentially unknown. Here, we report for the first time the trophic structure of an assemblage of these animals (19...Full Text Available
A fast and sensitive LC-ESI-MS method is described for the comparative quantification of 16 estrogen metabolites based on the derivatization of estrogens with a novel derivatizing reagent, N-methyl-nicotinic...Full Text Available
High resolution structural elucidation of macromolecular structure by solid-state nuclear magnetic resonance requires the preparation of uniformly aligned samples that are isotopically labeled. In...Full Text Available
In vivo short-term effects of recombinant human TNF-alpha on lipolysis, FFA flux, fat oxidation, triglyceride-fatty acid cycling, and glucose kinetics were evaluated with stable isotopic tracers and...Full Text Available
The planned spallation source can be of considerable significance for biomedical basic research and for clinically relevant diagnostic and therapeutic applications. The following gives a brief description and explanations for its possible use in clinical medicine: I. Treatment of Malignant Tumors II. Production of Isotopes for Biochemical Investigations in Living Organisms for Diagnostic Purposes.
Optical Isotope shift measurements have been performed for the {sup 240f,242f}Am fission isomers to test the stability of nuclear deformation as function of the neutron number. The method is based on resonance ionization spectroscopy (RIS) in a buffer gas cell with fission detection of the ionization process. The {sup 240f,242f}Am fission isomers have been produced by {sup 242}Pu(p, 3n), {sup 242}Pu(d, 2n) reactions, respectively. Relative isotope shift ratios X{sub exp}{sup 242f}(500 nm)=IS{sup 242f,241}/IS{sup 243,241}=41.4(8) and X{sub exp}{sup 240f}(500 nm)=IS{sup 240f,241}/IS{sup 243,241}=39.2(8) were measured. From these ratios a small difference {delta}{beta}{sub 2}{sup 242f,240f}=0.0076(14) of the deformation parameter {beta}{sub 2} can be deduced assuming that the isotope shift between the reference isotopes {sup 241,243}Am is caused by a pure volume change. (orig.)
Laser spectroscopy measurements have been performed on neutron deficient iridium isotopes. The hyperfine structure and isotope shift of the optical Ir I transition 5d{sup 7}6s{sup 24}F{sub 9/2} {sup {yields}} 5d{sup 7}6s6p {sup 6}F{sub 11/2} at 351.5 nm have been studied for the {sup 182-189}Ir, {sup 186}Ir{sup 1}m and {sup 191,193}Ir isotopes. The nuclear magnetic and quadrupole moments were obtained from the HFS measurements and the changes of the mean square charge radii from the IS measurements. A large mean square charge radius change between {sup 187}Ir and {sup 186}Ir and between {sup 186}Ir{sup 1}m and {sup 186}Ir{sup 1}g has been observed.
Laser spectroscopy measurements have been performed on neutron deficient iridium isotopes. The hyperfine structure and isotope shift of the optical Ir I transition 5d"76s"2"4F_9_/_2 "#-># 5d"76s6p "6F_1_1_/_2 at 351.5 nm have been studied for the "1"8"2"-"1"8"9Ir, "1"8"6Ir"1m and "1"9"1","1"9"3Ir isotopes. The nuclear magnetic and quadrupole moments were obtained from the HFS measurements and the changes of the mean square charge radii from the IS measurements. A large mean square charge radius change between "1"8"7Ir and "1"8"6Ir and between "1"8"6Ir"1m and "1"8"6Ir"1g has been observed.
Shell model calculations are reported for the properties of normal parity states of /sup 7/Li, /sup 8/Li and /sup 9/Li. Fits to new experimental data are displayed, some ambiguities resolved, and structure information provided for help in further investigations.
Uranium enrichment by gas centrifugation relies on the pressure diffusion of the isotopes when their gaseous mixture is submitted to the pressure diffusion in the strong radial pressure gradient due to the centrifugal force in a very rapidly rotating cylinder. To compute the isotope separation in a gas centrifuge, the viscous compressible Navier-Stokes equations are solved for the mixture, then the diffusion equations are solved for the isotopes. As far as the separation performance is concerned, the models deal with the steady state of the axi-symmetric gas motion in the rotating cylinder. The numerical tools are briefly presented: first, the MOLINA code which numerically solves the axi-symmetric gas motion in the specific conditions of rapid rotation by use of a change of variables suited to the high density gradient and by use of a Marker And Cell method; then, the diffusion equations solver which uses a Finite Volume ...
A method for quick, high-accuracy measurement of lithium isotopes has become necessary in carrying out research on the separation and concentration of lithium isotopes by ion exchange. The present report focuses on the application of a hollow cathode, as excitation source, to emission spectral analysis for lithium isotope measurement. The grating monochromator used incorporates a pressure scanned etalon. With decreased Doppler broadening and pressure broadening, the hollow cathode, used as excitation source, can give narrow spectral lines, permitting good separation among them. To achieve a high accuracy, the emission intensity of the hollow cathode should be maintained as stable as possible relative to time. In particular, the stability of a light source can be affected significantly by the chemical form of the sample. A study is also made here to identify a condition where lithium acetate effluent as-obtained from an ion ...
In the presence of hydroxyl anion, both formaldehyde and glyoxal are known to undergo rearrangements involving intermolecular and intramolecular hydride transfer (the Cannizzaro and Benzilic acid rearrangements respectively). The authors report ab initio SCF-MO calculations of the transition state geometries, the activation barriers, and the hydrogen isotope effects for these two reactions. The structure of the transition state for the rection involving formaldehyde is usually basis set dependent, becoming more linear and symmetrical as the basis set size increases. In contrast, the analogous transition state for the glyoxal reaction involves a highly non-linear hydride transfer. They find the isotope effects to be quite low for the Cannizzaro reaction, and significantly larger for the non-linear benzilic acid rection, in apparent contradiction to Westheimer's suggestion the isotope effects reach a maximum for linear ...
The high-energy reaction cross sections of Li and Be isotopes are calculated using a simplified Glauber model and densities constrained by the empirical binding energies. We find excellent agreement with experiment, reproducing the large increase for the most neutron-rich nuclei.
We describe a non-isotopic, semi-automated method for large-scale multiplex analysis of nucleic acid sequences, using the cystic fibrosis transmembrane regulator (CFTR) gene as an example. Products...Full Text Available
The isotope shifts of the levels 5p/sup 2/ /sup 1/D/sub 2/, /sup 1/S/sub 0/ and 5sns /sup 1/S/sub 0/(n = 7,8) of strontium have been measured between the isotopes 84, 86, 87 and 88 in two-photon transitions from the ground state, using two lasers with different wavelengths. These levels occur below the beginning of the Rydberg series, and are known to exhibit very strong configuration mixing. Mass and field isotope shifts are calculated ab initio by means of the MCHF method for these levels and 5s4d /sup 1/D2, 5s6s /sup 1/S/sub 0/. The qualitative agreement between theory and experiment confirms the necessity of taking into account the mixing (up to 50%) with both the 5p/sup 2/ and 4d/sup 2/ perturbers in the wavefunction expansions.
Enhanced nutrient cycling basically involves close interaction between inorganic and organic sources of nutrients. Contrasting scenarios of nutrient cycling are found under intensive cropping production systems in most industrialized countries and traditional production systems predominant in many developing countries, where there is a net mining of soil nutrients due to crop harvest removal and erosion. Therefore, to enhance nutrient management in marginal tropical soils it is necessary to maximize the efficiency of nutrient uptake from various inorganic and organic sources with minimal environmental impact. It is postulated that one of the main approaches will be the identification and/or selection of plant genotypes for enhanced nutrient acquisition, in particular at low levels of soil available nutrients. In this context, use of various isotope techniques in examining root activity/distribution pattern and plant nutrient uptake is examined. On the other hand, ...
... M. Taylor, T. Kurt Kyser. (2009) Feather isotope analysis discriminates age-classes of Western, Least, and Semipalmated sandpipers when plumage ... ...
While tritium exposure to the site-workers in Wolsung NPP is up to about 40% of the total personnel exposure, Ministry of Science and Technology has asked tritium removal facility for requirement of post heavy-water reactor construction. For the purpose o...
A new method for the determination of {sup 237}Np and Pu isotopes in large soil samples has been developed that provides enhanced uranium removal to facilitate assay by inductively coupled plasma mass spectrometry (ICP-MS). This method allows rapid preconcentration and separation of plutonium and neptunium in large soil samples for the measurement of {sup 237}Np and Pu isotopes by ICP-MS. {sup 238}U can interfere with {sup 239}Pu measurement by ICP-MS as {sup 238}UH{sup +} mass overlap and {sup 237}Np via {sup 238}U peak tailing. The method provides enhanced removal of uranium by separating Pu and Np initially on TEVA Resin, then transferring Pu to DGA resin for additional purification. The decontamination factor for removal of uranium from plutonium for this method is greater than 1 x 10{sup 6}. Alpha spectrometry can also be applied so that the shorter-lived {sup 238}Pu isotope can be measured successfully. {sup 239}Pu, ...
The concordance of standard big bang nucleosynthesis theory and the related observations of the light element isotopes (including some new higher {sup 4}He abundances) will be reviewed. Implications of BBN on chemical evolution, dark matter and constraints on particle properties will be discussed.
This work is based on the study of cesium ({sup 118,146}Cs) and francium ({sup 207-213}Fr,{sup 220-228}Fr) isotopes by hyperfine atomic spectroscopy and on the interpretation of these results from the nuclear physics point of view. The measured nuclear quantities are: the spin, the magnetic moment, the electric quadrupole moment and the mean square charge radius. The experimental method which is based on hyperfine optical pumping with a tunable laser, followed by magnetic analysis of the atoms is described in the first part. Results related to atomic physics are also presented. In the second part, these data are interpreted in the framework of nuclear models. The deformation of light cesium isomers are compared to values obtained from a theoretical self-consistent calculation. Heavy francium isotopes are situated in an area where the existence of static octupole deformations have been predicted. The odd-even staggering measured on the mean ...
A stable isotope mass-balance of dissolved inorganic carbon during a blue-green algae bloom in a softwater lake demonstrates that at low partial pressure of carbon dioxide there must be a large net negative carbon isotope fractionation between atmospheric CO/sub 2/ and the CO/sub 2/ absorbed by lake water at pH = 9.5. Chemical enhancement of CO/sub 2/ invasion at high pH by the reaction CO/sub 2/ + OH/sup -/ ..-->.. HCO/sub 3//sup -/ at large apparent film thicknesses may result in carbon isotope fractionation approaching that for a hydroxide solution. This phenomenon, coupled with a decrease in the photosynthetic fractionation, forced the surface water of a softwater lake to achieve increasingly negative delta /sup 13/C values during an algal bloom, which is in the opposite sense to the trend that results from photosynthesis under less extreme conditions. This and other similar systems must operate under non-equilibrium ...
We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.
This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.
Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.
Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.
Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).
One of the major scientific and technological challenges for the production of flexible organic electronic devices is the device protection against atmospheric molecule permeation, which causes corrosion reducing its operation and lifetime. In this work, Spectroscopic Ellipsometry has been implemented to investigate the influence of silicon dioxide nanoparticles on the optical properties of hybrid polymers. The spectra analysis revealed valuable information about the electronic and vibrational response as well as the cross-linking mechanisms of these materials. The correlation of the optical properties with the synthesis parameters and the barrier response will contribute towards their optimization in order to be used as high barrier coatings for flexible organic electronics applications.
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
Scintillation light in liquid xenon excited by 100 MeV/n Al ions was detected with a home-made silicon photodiode. The diameter of the photodiode was 2 inch. The effective quantum efficiency was observed to be 22% for the wavelength of liquid xenon scintillation light (170 nm), while the effective quantum efficiency for 5.486 MeV alpha-particle excitation was 44%. An energy resolution of 0.5% rms was achieved for the energy deposition of 2.5 GeV in liquid xenon using a fast preamplifier ({approx equal} 20 ns). (orig.).
A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.
The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.
Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.
The isomeric and {beta}-decay properties of neutron-rich {sup 53-57}Sc and {sup 53,54}Ca nuclei near neutron number N = 32 are reported, and the low-energy level schemes of {sup 53,54,56}Sc and {sup 53-57}Ti are presented. The low-energy level structures of the {sub 21}Sc isotopes are discussed in terms of the coupling of the valence 1f{sub 7/2} proton to states in the corresponding {sub 20}Ca cores. Implications with respect to the robustness of the N = 32 subshell closure are discussed, as well as the repercussions for a possible N = 34 subshell closure.
Possible use of stable radioisotopes in studies on nutrition and medicine problems that may be used in investigations of babies, children, pregnant women is shown. Attention is paid to behaviour of limited number of elements: hydrogen, carbon, nitrogen, oxygen. The IAEA plans implementation of a new coordinated research program on use of stable isotopes for studying nutrition problems and related diseases. The program emphasis will be placed on protein metabolism measurements and estimation of energy consumption in control population groups in developing countries.
The objective of this research was to determine improved thermal, epithermal, and fast fluxes and several responses at mechanical test surveillance location keys 2, 4, 5, and 7 of the pressure vessel of the Oak Ridge National Laboratory High Flux Isotope Reactor (HFIR) for the beginning of the fuel cycle. The purpose of the research was to provide essential flux data in support of radiation embrittlement studies of the pressure vessel shell and beam tubes at some of the important locations.
Secondary ion mass spectrometry (SIMS), secondary electron microscopy (SEM) and X-ray analysis have been applied to the measurement of U-bearing particles with the intent of gleaning information concerning their history and/or origin. The lead isotopic abundances are definitive indicators that U-bearing particles have come from an ore-body, even if they have undergone chemical processing. SEM images and X-ray analysis can add further information to the study that may allude to the extent of chemical processing. The presence of 'common' lead that does not exhibit a radiogenic signature is clear evidence of anthropogenic origin. (author)
As there are many efforts devoted in order to manage the cancer, here the researcher handle one of these efforts that play a major part in treating the cancer internationally, it is a brachytherapy system. Brachytherapy was carried out mostly with radium sources, but recently some artificial sources are incorporated in this mode of treatment such as Cs-137, Ir-192, Au-198, P-32, Sr-90 and I-125. The research cover history of brachytherapy and radioactive sources used in, techniques of implementation, radiation protection and methods of brachytherapy dose calculation, as well as brachytherapy in radiation and isotopes centre in Khartoum.
This journal article reports a study originally intended to examine the microbial composition of Octopus Spring and nearby vent biofilms. The article compares the lipid profiles of several genera within the Aquificales as well as measurements of the isotopic carbon fractionation associated with autotrophic and heterotrophic growth of Thermocrinis ruber. Results of the study have led to improved understanding of population structure in the Octopus Spring pink streamer community, a hyperthermophilic chemolithotrophic ecosystem in Yellowstone National Park.
A simple highly efficient procedure has been developed for recovery of thallium radioisotopes from lead and bismuth targets irradiated by 1-GeV protons. The procedure is based on the use of extraction chromatography. The cross-sections have been determined for formation of {sup 200}Pb, {sup 201}Pb, {sup 202m}Pb, and {sup 203}Pb radioisotopes in targets from lead with natural isotopic composition, irradiated by 1-GeV protons.
A simple highly efficient procedure has been developed for recovery of thallium radioisotopes from lead and bismuth targets irradiated by 1-GeV protons. The procedure is based on the use of extraction chromatography. The cross-sections have been determined for formation of "2"0"0Pb, "2"0"1Pb, "2"0"2"mPb, and "2"0"3Pb radioisotopes in targets from lead with natural isotopic composition, irradiated by 1-GeV protons.
We describe a compact ultrafiltration system for the removal of pyrogens and bacteria from water labeled with the stable isotopes of deuterium and oxygen-18. The ultrafiltration system is constructed from readily available commercial components and can achieve complete removal of pyrogens and bacteria from 1L contaminated water within 30 min. By use of our procedure, loss of the isotopically labeled water by retention in the filtration system was minimal. The purified water is suitable for both oral and intravenous administration to healthy human subjects participating in nutrition studies.
Nuclear reaction cross-sections for stable strontium and cesium isotopes, which were calculated by different approaches, are compared to available experimental data. Neutron and proton induced reaction cross-sections for the long-lived radionuclides [sup 90]Sr and [sup 137]Cs have been calculated in the energy range from 1 MeV to 10 GeV. Recommendations concerning cross-section calculations for strontium and cesium isotopes at intermediate and high energies are given. (orig.)
Photoluminescence spectra for solutions containing Sm"3"+ isotope ions in heavy and normal water were studied in the wave length #lambda# = 500-700 nm and for absorption spectra and photoluminescence excitation spectra within the range of #lambda# = 260-600 nm. Differences in molar extinction coefficients for "1"4"4Sm"3"+ and "1"5"4Sm"3"+ were established both in the solutions with D_2O and by transition from the solutions with D_2O to the solutions with H_2O. New possible causes of the identified effects are discussed
Differences in the biological disposition and in the effects of the stable lithium isotopes, Li-6 and Li-7, in animals were characterized. A somewhat higher toxicity was associated with WLiCl compared to XLiCl with NLiCl intermediate. All lithium treatments increased water intake and resulted in weight gain. Peak plasma concentration was slightly high for 6Li than 7LiCl suppressed action potential amplitudes during tetanic stimulation more than NaCl when added to Renger solution bathing ganglia.
An island of isomers have recently been observed on both sides of the N=40 shell below the Ni isotopes. Isomeric states in the 65Fe and 67Fe allow the knowledge of the single particle structure around the {nu}g9/2 shell. Moreover, the excitation energy of the first 2+ and 4+ states in the 68Fe have been established by {beta}-{gamma} correlation. The evolution of the structure of the Fe isotopes going far away from the valley of stability is, for the first time, given for N>40.
An island of isomers have recently been observed on both sides of the N=40 shell below the Ni isotopes. Isomeric states in the 65Fe and 67Fe allow the knowledge of the single particle structure around the #nu#g9/2 shell. Moreover, the excitation energy of the first 2+ and 4+ states in the 68Fe have been established by #beta#-#gamma# correlation. The evolution of the structure of the Fe isotopes going far away from the valley of stability is, for the first time, given for N>40.
An overview of the past, present and future research activities at the CERN neutron time of flight facility n_TOF is given, with special focus on the astrophysical aspects. During the first campaign (Phase I), neutron capture cross sections of relevance for several aspects of the s-process nucleosynthesis have been measured. A second campaign has recently started (Phase II), aiming at the study of the weak s-process component via accurate (n,#gamma#) measurements of the Fe and Ni isotopes. Some changes in the facility will allow us to perform these measurements with improved experimental conditions.
The addition of ZnO, depleted in the Zn-64 isotope, to the water of boiling water nuclear reactors lessens the accumulation of Co-60 on the reactor interior surfaces, reduces radioactive wastes and increases the reactor service-life because of the inhibitory action of zinc on inter-granular stress corrosion cracking. To the same effect depleted zinc in the form of acetate dihydrate is used in pressurized water reactors. Gas centrifuge isotope separation method is applied for production of depleted zinc on the industrial scale. More than 20 years of depleted zinc application history demonstrates its benefits for reduction of NPP personnel radiation exposure and combating construction materials corrosion.
Excitation transfer between the 3S[sub 1/2] states of the lithium isotopes [sup 6]Li and [sup 7]Li is measured in a thermionic diode. The 3S level is excited by off-resonant two-photon transitions with a single mode cw laser. The relative densities of the directly excited and collisionally populated levels are probed by further laser excitation to the 12P levels. An energy transfer cross section of 585 A[sup 2] [+-] 160 A[sup 2] is found at the experimental temperature of about 850 K. A simple semiclassical calculation yields a cross section of 450 A[sup 2]. (orig.)
Isotopic analyses of radioactive materials such as irradiated nuclear fuel are of major importance for the optimization of the nuclear fuel cycle and for safeguard aspects. Among the mass-spectrometric techniques available, inductively coupled plasma mass spectrometry (ICP-MS) and thermal ionization mass spectrometry are the most frequently applied methods for nuclear applications. Because of the low detection limits, the ability to analyze the isotopic composition of the elements and the applicability of the techniques for measuring stable as well as radioactive nuclides with similar sensitivity, both mass-spectrometric techniques are an excellent amendment to classical radioactivity counting methods. The paper describes selected applications of multicollector ICP-MS in combination with c...
Beta-decay studies of the new neutron-rich isotopes sup(58,59)Cr, "6"3Mn, sup(66,67)Co and "6"9Ni, yielding distinctly shorter half-lives than the corresponding theoretical predictions, are presented. The influence of the short half-lives on the r-process calculations of nuclear abundances is discussed. It is concluded that a significantly higher neutron density than the one obtained from explosive helium burning in supernovae is needed to reproduce the observed abundances around A = 80. (orig.).
The Fuels Material Examination Facility/Fuel Assembly Area is proposed to be used for fabrication of mixed oxide fuel to support the Fast Flux Test Facility (FFTF) tritium/medical isotope mission. The plutonium isotope mix for the new mission is different than that analyzed in the FMEF safety analysis report. A reanalysis was performed of three representative accidents for the revised plutonium mix to determine the impact on the safety analysis. Current versions computer codes and meterology data files were used for the analysis. The revised accidents were a criticality, an explosion in a glovebox, and a tornado. The analysis concluded that risk guidelines were met with the revised plutonium mix.
The isomeric and ?-decay properties of neutron-rich 53-57Sc and 53,54Ca nuclei near neutron number N=32 are reported, and the low-energy level schemes of 53,54,56Sc and 53-57Ti are presented. The low-energy level structures of the 21Sc isotopes are discussed in terms of the coupling of the valence 1f7/2 proton to states in the corresponding 20Ca cores. Implications with respect to the robustness of the N=32 subshell closure are discussed, as well as the repercussions for a possible N=34 subshell closure.
Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...
Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary ...
Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...
The paper describes the production of highly enriched isotopes of uranium, plutonium, americium and curium by electromagnetic separation for scientific and applied researches in physics, chemistry, geology, medicine, biology and other fields. Using the equipment described, the isotopes are produced in quantities sufficient to set up nuclear physical experiments, to produce nuclear reference materials and standard sources for calibration of radiometrical and mass spectrometrical equipment, in radionuclide metrology, etc. For the following isotopes the indicated degrees of isotopic enrichment were achieved: "2"3"3U-99.97%; "2"3"5U-99.97%; "2"3"6U-98.0%; "2"3"8U-99.997%; "2"3"8Pu-99.6%; "2"3"9Pu-99.9977%; "2"4"0Pu-99.9-100%; "2"4"1Pu-96.998%; "2"4"2Pu-97.8-99.96%; "2"4"4Pu-96.7%; "2"4"1Am-99.6%; "2"4"2"mAm-73.6%; "2"4"3Am-99.2-99.94%; "2"4"3Cm-99.99%; "2"4"5Cm-99.998%; "2"4"6Cm-99.8%; "2"4"7Cm-90%, ...
Full text: Based on experience with nuclear material confiscated in Hungary from illicit trafficking activities in the nineties it has been decided that traditional gamma-spectrometry should be complemented by destructive analytical techniques. The 17/1996 (I. 31.) Korm. Governmental Decree delegated the identification, categorization and characterization tasks to the Institute of Isotopes, Budapest. Routine gamma-spectrometric methods have been further developed aiming at the i) age (production date) determination of seized samples and complete (nondismountable) uranium-bearing items (such as fresh fuel bundles and fission chambers) by HRGS technique, ii) improvement of measurement accuracy and reliability. Starting in 2005 mass spectrometry (ICP-SFMS) and scanning electron microscopy have been implemented to characterize nuclear samples in more detail and to analyze environmental samples both for isotopic and elemental composition focusing on ...
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO{sub 2}-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also decreases the doping density in the case of ...
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO_2-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also decreases the doping density in the case of the ...
The influence of surface oxides of variable composition and nonstoichiometry formed at high temperatures in air on the general corrosion resistance of ferritic chromium steel type 08H17T (Fe-17Cr-1Ti) in weak sulfuric acid has been studied. Anodic passive films formed on steel with different pretreatments have also been examined. The surface oxide of nearly stoichiometric composition formed at 300 C provides for the passive state of steel in sulfuric acid despite its depletion by chromium when compared with that for nonstoichiometric Cr-enriched oxide formed at 600 C. The dissolution and transformation of nonstoichiometric thermal surface oxide in sulfuric acid appear to take place through defect sites, {minus}Fe{sup 2+} ions, and oxygen vacancies of the n-type conductor. The passive film formed on the nonstoichiometric oxide film, which had been produced at 600 C, was found to be more susceptible to open-circuit breakdown compared to the native oxide and to the ...
GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the GaAs1-xPx p-n junction structures increase of ...
Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but ntype when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe ...
Abstract A next generation material for surface passivation of crystalline Si is Al2O3. It has been shown that both thermal and plasma-assisted (PA) atomic layer deposition (ALD) Al2O3 provide an adequate level of surface passivation for both p- and n-type Si substrates. However, conventional time-resolved ALD is limited by its low deposition rate. Therefore, an experimental high-deposition-rate prototype ALD reactor based on the spatially separated ALD principle has been developed and Al2O3 deposition rates up to 1.2-nm/s have been demonstrated. In this work, the passivation quality and uniformity of the experimental spatially separated ALD Al2O3 films are evaluated and compared to conventional temporal ALD Al2O3, by use of quasi-steady-state photo-conductance (QSSPC) and carrier density ...
Techniques for fabricating P-type (Cu,Ag)/sub 2/Se with mesh-type bonds have been developed and are being evaluated for long-term use. In addition, methods for reducing vapor suppression by the use of coatings and/or baffling continue to show gains. The N-type alloy Gd/sub 2/Se/sub 3/ has been shown to be thermally unstable. It undergoes a sluggish cubic-to-orthorhombic phase change below 1000/sup 0/C, with an accompanying degradation in mechanical and thermoelectric properties. Fabrication studies conducted with the (Bi,Sb)/sub 2/(Se,Te)/sub 3/ alloys showed these materials to be sensitive to oxygen contamination if reproducible properties are to be obtained. Preparation of powdered material by explosive techniques was investigated. This technique appears to be useful in preparing homogeneous -325 mesh material, but it does not yield a useful amount of submicron-size powder.
This study investigates the applicability of n-type TiO2 and p-type NiO on the FTO-glass (Fluorine doped tin oxide, SnO2:F) substrate of the working electrode in a dye-sensitized solar cell (DSSC). The working electrode was designed and fabricated by depositing a film of TiO2/NiO composite particles, which were prepared by mixing the Ni powder with TiO2 particles using dry mixing method, on a FTO-glass substrate using a spin coating process. The working electrode was then immersed in the solution of N-719 (Ruthenium) dye at a temperature of 70degreeC for 6h. Moreover, a thin film of platinum (Pt) was deposited on the FTO-glass substrate of the counter electrode using an E-beam evaporator. Finally, the DSSC was assembled, and the short-circuit photocurrent, the open-circuit photovoltage and...
Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5{times}10{sup 15} and 1.3{times}10{sup 17}cm{sup {minus}3}) and p-type (2.5{times}10{sup 17}cm{sup {minus}3}) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 10{sup 4} and 10{sup 5}, respectively. {copyright} {ital 1997 American Institute of Physics.}
The temperature effect on corrosion behaviors of PbCaSnCe alloy in 4.5 M H{sub 2}SO{sub 4} solution was investigated by using potentiodynamic curve, electrochemical impedance spectra (EIS), Mott-Schottky plot and photocurrent response methods. It was found that PbCaSnCe alloy was in passive state in sulfuric acid solution, a passive film can be formed on alloy surface. The compositions of passive films formed at 0.9 V for 2 h under different temperatures were detected by X-ray photoelectron spectroscopy (XPS). The results showed that the film resistance and the transfer resistance decreased with the increment of the solution temperature. Mott-Schottky analysis and the photocurrent response revealed that the passive film exhibited n-type semi-conductive character, the donor density of the passive film decreased with increasing the solution temperature. Photocurrent response revealed that the photocurrent increased with increasing temperature. XPS results indicated ...
The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of the ZnO films was ...
The confocal Raman micro-spectroscopy has been used for the study of a Lithium/polymer electrolyte-LiTFSI/V{sub 2}O{sub 5} type battery in which the polymer electrolyte thickness is of about 80 {mu}m. The analysis is performed on the side of the battery thanks to a specially designed cell which preserves all the characteristics of the real system. The analysis is performed on 20 points aligned between the anode and the cathode and with a depth of several tenth of {mu}m. The analysis of data obtained during charging/output cycles allows to evaluate the gradients of salt concentration inside the electrolyte, the pollutions of LiOH, Li{sub 2}CO{sub 3}, Li{sub 2}O and Li{sub 3}N -type at the lithium interface, but also the structural modifications of the cathode material. The in-situ study of concentration gradients inside the electrolyte is of prime importance for the understanding of dendrites growth. (J.S.) 11 refs.
Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.
Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.
Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.
A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, ...
In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. When exposed to O_2 and CO, a typical n-type response is ...
The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N {sub D}) for the passive film is of the order of 10{sup 21} cm{sup -3} and decreases with increasing formation time and potential, indicating that defects decrease with increasing film thickness. Based on the information about the physical phenomena, an ...
The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N _D) for the passive film is of the order of 10"2"1 cm"-"3 and decreases with increasing formation time and potential, indicating that defects decrease with increasing film thickness. Based on the information about the physical phenomena, an equivalent ...
The compositions of the Earth's crust and mantle, and those of the Moon and Mars, are relatively well known both isotopically and elementally. The same is true of our knowledge of the asteroid belt composition, based on meteorite analyses. Remote measurements of Venus, the Jovian atmosphere, and the outer planet moons, have provided some estimates of their compositions. The Sun constitutes a large majority, > 99%, of all the matter in the solar system. The elemental composition of the photosphere, the visible 'surface' of the Sun, is constrained by absorption lines produced by particles above the surface. Abundances for many elements are reported to the {+-}10 or 20% accuracy level. However, the abundances of other important elements, such as neon, cannot be determined in this way due to a relative lack of atomic states at low excitation energies. Additionally and most importantly, the isotopic composition of ...
We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the ...
In support of the efforts to apply ceramics in advanced heat engines, a study was made of the sliding performance of ceramics at the ring/cylinder interface of low heat rejection engines. The objective was to understand the basic mechanisms controlling the wear of candidate ceramics and thereby identify means for applying these ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and several plasma-sprayed ceramic coatings without lubrication were unsuccessful because of high friction and high wear rates. Experiments using a polyalphaolefin lubricant at temperatures to 260 C identified several combinations having wear rates in the general range likely to be acceptable for engines. Plasma-sprayed coatings of chromium oxide and hypersonic powder flame sprayed coatings of cobalt-bonded tungsten carbide performed particularly well as ring coatings. Similar performance was obtained with these ring ...
Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...
The lakes formed in the Amazon floodplain play a key role in sustaining the highest populational density in the Amazon Basin because of its high primary productivity. The water volume in these lakes vary greatly during the year and possible water sources are the feeding river during high water state of the hydrographs and local inputs from its drainage basin. As these sources are chemically distinct, to understand the nutrient dynamics in these lakes, it is very important to know the relative water contribution of different water sources. In this paper we use "1"8O as a conservative to know the water sources for the lakes and our hypothesis is that: 1) In the high water stage lake water is derived predominantly from its feeding river. Therefore their #delta#"1"8O should be similar. 2) In the low water stage lake water is a mixture of watershed and last flood event waters. In this case, lake #delta#"1"8O should be indicative of the relative contribution of each source. To test this ...
(methine-{sup 3}H)1,1-Di-(4-chlorophenyl)-2,2,2-trichloroethane ((methine-{sup 3}H)DDT) and its di-(4-nitrophenyl) analog, both of high purity with a moderately high specific activity were prepared. Chloro-benzene was condensed with (1-{sup 3}H)1-(4-chlorophenyl)-2,2,2-trichloro-ethanol, which has been synthesized by sodium boro({sup 3}H)hydride reduction of 4-chlorophenyl trichloromethyl ketone. The purified ({sup 3}H)DDT had a specific activity of 0.77 Ci/mmol (28.49 GBq/mmol). (methine-{sup 3}H)1,1-Diphenyl-2,2,2-trichloroethane was similarly synthesized and was nitrated to give (methine-{sup 3}H)1,1-di-(4-nitrophenyl)-2,2,2-trichloro-ethane of 1.63 Ci/mmol (60.31 GBq/mmol). Dehydrochlorination with housefly enzyme (glutathione-dependent DDT dehydrochlorinase) showed a remarkable isotope effect. For DDT, the observed tritium isotope effect on V{sub max}/K{sub m} was 11.51{plus minus}0.52. For the nitro-analog, the value was 11.3{plus ...
RangerMaster{trademark} is the embedded firmware for Quantrad Sensor`s integrated nuclear instrument package, the Ranger{trademark}. The Ranger{trademark}, which is both a gamma-ray and neutron detection system, was originally developed at Los Alamos National Laboratory for in situ surveys at the Plutonium Facility to confirm the presence of nuclear materials. The new RangerMaster{trademark} software expands the library of isotopes and simplifies the operation of the instrument by providing an easy mode suitable for untrained operators. The expanded library of the Ranger{trademark} now includes medical isotopes {sup 99}Tc, {sup 201}Tl, {sup 111}In, {sup 67}Ga, {sup 133}Xe, {sup 103}Pa, and {sup 131}I; industrial isotopes {sup 241}Am, {sup 57}Co, {sup 133}Ba, {sup 137}Cs, {sup 40}K, {sup 60}Co, {sup 232}Th, {sup 226}Ra, and {sup 207}Bi; and nuclear materials {sup 235}U, {sup 238}U, {sup 233}U, and {sup 239}Pu. To accomplish ...
Penning trap mass spectrometry is presented as a complementary tool to nuclear spectroscopy experiments for the study of nuclear structure in the vicinity of N=40, Z=28. High-precision mass measurements of the "6"3"-"6"6Fe and "6"4"-"6"7Co isotopes have been carried out with the Low Energy Beam and Ion Trap (LEBIT) Penning trap mass spectrometer. The newly obtained mass values for "6"6Fe and "6"7Co are presented, together with the previously reported LEBIT mass measurements in this region. In the case of "6"5Fe the existence of a new isomer is reported, and an isomer recently discovered by decay spectroscopy in "6"7Co is confirmed. Relative mass uncertainties as low as 4x10"-"8 are obtained. All mass values are found to be in good agreement with previous experimental results with the exception of "6"4Co, where a 5#sigma# deviation is observed. Using these data the two neutron separation energies S_2_n are calculated. However, the large error bars in the mass values ...
The Fast Flux Test Facility (FFTF) is a liquid-metal-cooled, fast neutron test reactor located on the Hanford Site. A dual computer system has been developed to monitor the reactor cover gas to detect and characterize any fuel or test pin fission gas releases. The system acquires gamma spectra data, identifies isotopes, calculates specific isotope and overall cover gas activity, presents control room alarms and displays, and records and prints data and analysis reports. The Fission Gas Monitor System (FGMS) integrates commercially available hardware and software, providing a reliable and easily maintained system. The design provides extensive automation of previous manual operations, reducing the need for operator training and minimizing the potential for operator error. The dual nature of the system allows either system A or B to be taken out of service for periodic tests or maintenance without interrupting the overall system performance. A ...
This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials on ...
Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and ...
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.
In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si films are the main factors that ...
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced ...
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated ...
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the ...
The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop ...