n-channel metal-oxide-semiconductor field-effect: Topics by WorldWideScience.org

Strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates

An all solid-state kicker pulser for a proton radiography system has been designed. Multiple solid-state modulators stacked in an inductive-adder configuration are utilized in this kicker pulser design. Each modulator is comprised of multiple metal-oxide-semiconductor field-effect transistors (MOSFETs) which quickly switch the energy storage capacitors across a magnetic induction core. Metglas is used as the core material to minimize loss. Voltage from each modulator is inductively added by a voltage summing stalk. A circuit model of a prototype inductive adder kicker pulser modulator has been developed to predict the performance of the pulser modulator. The modeling results are compared with experimental data.

2001-06-12

Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs

The strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 deg. C, significantly enhanced Si-Ge interdiffusion is observed in Si/Si{sub 1-y}Ge{sub y}/Si heterostructures (y=0.56, 0.45, and 0.3) with Si{sub 1-y}Ge{sub y} layers under compressive strain of -1%, compared to those under no strain. In contrast, tensile strain of 1% in Si{sub 0.70}Ge{sub 0.30} layer has no observable effect on interdiffusion in Si/Si{sub 0.70}Ge{sub 0.30}/Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and heterostructure-on-insulator metal oxide semiconductor field effect transistors.

2006-01-02

Ultrashallow P{sup +}/N junction formation by plasma ion implantation

Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained-Si (s-Si) p-MOSFETs (metal-oxide-semiconductor field-effect transistors) along (110) and (100) channel directions. In bulk Si, a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field. The combination of (100) direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the (110) direction, opposite to the situation in bulk Si. But the combinational strain experiences a gain loss at high field, which means that uniaxial compressive strain may still be a better choice. The mobility enhancement of SiGe-induced strained p-MOSFETs along the (110) direction under additive uniaxial tension is explained by the competition between biaxial ...

2009-10-01

Ultrashallow P"+/N junction formation by plasma ion implantation

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for ...

2000-12-01

Si-JFET devices and related noise behavior under irradiation

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for high-speed application ...

2000-12-01

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

Monolithic N-channel junction field effect transistors (NJFETs) dc characteristics, small signal parameters and noise have been studied from 300 K down to cryogenic temperatures before and after irradiation with {sup 60}Co {gamma}-rays and fast neutrons (1 MeV). Radiation induced effects on dc parameters and noise are reviewed. Noise spectral density measurements performed at various temperatures have shown that the radiation induces a noise increase which is temperature and frequency dependent. (orig.). 14 refs.

1998-02-01

Technology of GaAs metal-oxide-semiconductor solar cells

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

2004-09-01

Radiation hardening of smart electronics

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

1977-01-01

Ultra high-speed (508 MHz) beam position digital feedback system

Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to radiation hardness factors, and non-volatile programmable memory technology. 3 ...

Radiation hardening of CMOS-based circuitry in SMART transmitters

The B-Factory which is constructed by National Laboratory for High Energy Physics is the device for elucidating the breakdown of symmetry of matter and antimatter by studying the behavior of B mesons which are generated in large quantity when the electrons and the positrons which are accelerated to light velocity level are collided. In order to maintain electron beam-positron beam bunch circling the ring at light velocity stably, the instability of the coupled bunch must be overcome. For this purpose, the ultrahigh speed beam position digital feedback control system was developed. This system is composed of the high speed input-output substrate using GaAs LSI, the feedback computation substrate using complementary metal oxide semiconductor and the memory mounted on it, and the real time operation device. The development of both substrates and their functions are explained. The real time data collection and the change of ...

1997-02-01

Investigation on boron transient enhanced diffusion induced by the advanced P{sup +}/N ultra-shallow junction fabrication processes

Process control transmitters that incorporate digital signal processing could be used advantageously in nuclear power plants; however, because such transmitters are too sensitive to radiation, they are not used. The Electric Power Research Institute sponsored work at Sandia National Laboratories under EPRI contract RP2614-58 to determine why SMART transmitters fail when exposed to radiation and to design and demonstrate SMART transmitter circuits that could tolerate radiation. The term ''SMART'' denotes transmitters that contain digital logic. Tests showed that transmitter failure was caused by failure of the complementary metal oxide semiconductors (CMOS)-integrated circuits which are used extensively in commercial transmitters. Radiation-hardened replacements were not available for the radiation-sensitive CMOS circuits. A conceptual design showed that a radiation-tolerant transmitter could be constructed. A prototype for ...

Investigation on boron transient enhanced diffusion induced by the advanced P"+/N ultra-shallow junction fabrication processes

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

2005-08-01

Etching characteristics of high-k dielectric HfO2 thin films in inductively coupled fluorocarbon plasmas

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD technique over standard ion ...

2005-08-01

Development of transition metal semiconductors for photoelectrolysis of water. Final report

Inductively coupled fluorocarbon (CF4/Ar and C4F8/Ar) plasmas were used to etch HfO2, which is a promising high-dielectric-constant material for the gate of complementary metal-oxide-semiconductor devices. The etch rates of HfO2 in CF4/Ar plasmas exceeded those in C4F8/Ar plasmas. The tendency for etch rates to become higher in fluorine-rich (high F/C ratio) conditions indicates that HfO2 can be chemically etched by fluorine-containing species. In C4F8/Ar plasmas with a high Ar dilution ratio, the etch rate of HfO2 increased with increasing bias power. The etch rate of Si, however, decreasd with bias power, suggesting that the deposition of carbon-containing species increased with increasing the power and inhibited the etching of Si. The HfO2/Si selectivity monotonically increased with increasing power, then became more than 5 at the highest tested bias power. The carbon-containing species to inhibit etching of Si play an important role in enhancing the HfO2/Si ...

2005-11-01

The effects of cosmic radiation on implantable medical devices

This report discusses the development of transition metal oxide semiconductors for photoelectrolysis of water. More specifically, it involves preparation of TiO/sub 2/ films by sputtering and evaluating their physicochemical characteristics primarily as they relate to the behaviour of the films as photoanodes. Impedance, photoelectrochemical, and photoconduction properties of TiO/sub 2/ films sputtered in pure O/sub 2/ onto heated substrates have been determined as a function of O/sub 2/ pressure during sputtering, film thickness, Pt overcoating, and cathodic treatment. The capacitance data before cathodic treatment are of the form expected. The capacitance is essentially independent of potential, while for potentials increasingly cathodic of this value, the capacitance increases very rapidly. Cathodic treatment alters the impedance characteristics of the films but leads to either no detectible change in their ...

1981-03-27

Magnetic field effect on fluid flow characteristics in a pipe for laminar flow

Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A theoretical model which ...

1996-12-31

KoreaScience (Korea)

Full Text Available

2011-02-01

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

Final Technical Report, Grant DE-FG02-91ER45443: Heavy fermions and other highly correlated electron systems

2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEB). SEB parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p"+ plug modification approach for SEB hardening of power MOSFETs is validated with simulations on actual device structures.

1995-07-17

Serial multivibrator on field effect transistors

Properties of highly correlated electrons, such as heavy fermion compounds, metal-insulator transitions, one-dimensional conductors and systems of restricted dimensionality are studied theoretically. The main focus is on Kondo insulators and impurity bands due to Kondo holes, the low-temperature magnetoresistivity of heavy fermion alloys, the n-channel Kondo problem, mesoscopic systems and one-dimensional conductors.

1998-10-12

Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide

An operating cycle of a serial multivibrator carried out on the base of field-effect transistors has been analyzed. Calculation relations for the main multivibrator parameters have been obtained, and conditions of self-excitation has been determined. Experimental data for determination of the self-oscillation excitation region have been presented. These results are in a good agreement with the experiment. The analysis of the data obtained has shown that the serial multivibrator on field-effect transistors has comparatively narrow excitation region and requires an accurate turning.

1 2 3 4

Alpha energy distribution as a probe for the feeding of ND and SD bands in {sup 151,152}Dy nuclei

In this work, we investigated self-heating related instability in polysilicon thin film transistors (poly-Si TFTs) fabricated on polyimide (PI) substrates. Indeed, when Joule heating becomes relevant, the temperature of the active layer can substantially rise, since the devices are fabricated on thermally insulating substrates. As a result, electrical instability is triggered and attributed to the generation of interface states, due to the Si-H bond breaking, and charge trapping into the gate insulator. In addition, by using 3-dimensional numerical simulations, coupling the thermodynamic and transport models, we analyzed the temperature distribution of the device under operating conditions and found that self-heating is more severe for devices fabricated on plastic substrates.

2009-10-01

Stable p-channel polysilicon thin film transistors fabricated by laser doping technique

The study of the {alpha}-particle energy distributions associated with ND and SD states in {sup 151,152}Dy has been carried out. The Dy isotopes were produced in the reaction {sup 37}Cl+{sup 123}Sb at 191 MeV via the ({alpha}5n) and ({alpha}4n) channels, respectively. In {sup 151}Dy the {alpha}-particle energy distributions associated to ND and SD are very different from each other, both at the low and high energy sides inducing a difference of 3 MeV in the {alpha}-particle mean energy. In {sup 152}Dy the situation is different; the {alpha}-particle spectral shapes are similar and a difference in the {alpha}-particle mean energy of only 0.7 MeV is deduced. A description in terms of energy localization of entry states is given. (orig.)

1999-10-01

Stable p-channel polysilicon thin film transistors fabricated by laser doping technique

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped Thin Film ...

2005-09-01

Fully transparent thin-film transistor devices based on SnO2 nanowires.

2005-09-01

The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates. PMID:17595151

2007-06-27

Application of a new three-dimensional k.p model for the A-15 crystals to the properties of V3 Si

This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors (BiFETs) with a pure base and two MOS gates operating in the unipolar (electron) current mode. These nMOS-BiFETs, known as nMOS-FinFETs, usually have electrically short channels compared with their intrinsic Debye length of about 25 #mu#m at room temperatures. These longitudinal electric current terms are important short-channel current components, which have been neglected in the computation of the long-channel electrical characteristics. This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm.

2010-07-01

Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates

The new three-dimensional k.p model for the electronic structure of A-15 compounds gives satisfactory results for the magnetic susceptibility; shear modulus; tetragonal strain at the transition temperature Tm; and the magnetic field effect on Tm and shear mode sound velocity. Supported by NSF grant # DMR76-02043.

1977-11-01

Fabrication and characterization of polyterpenol as an insulating layer and incorporated organic field effect transistor

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe ...

Self-consistent electric field effect on electron transport of ECH plasmas

A non-synthetic polymer material, polyterpenol, was fabricated using a dry polymerization process namely RF plasma polymerization from an environmentally friendly monomer and its surface, optical and electrical properties investigated. Polyterpenol films were found to be transparent over the visible wavelength range, with a smooth surface with an average roughness of less than 0.4 nm and hardness of 0.4 GPa. The dielectric constant of 3.4 for polyterpenol was higher than that of the conventional polymer materials used in the organic electronic devices. The non-synthetic polymer material was then implemented as a surface modification of the gate insulator in field effect transistor (OFET) and the properties of the device were examined. In comparison to the similar device without the polymer insulating layer, the polyterpenol based OFET device showed significant improvements. The addition of the polyterpenol interlayer in the OFET shifted the ...

2010-08-31

Optical properties of proton-irradiated polymers

An algorithm is proposed which treats the ECH generated potential in a self-consistent way, by extending the Monte-Carlo Fokker-Planck method used by Murakami [S. Murakami et al., Proc. 17th IAEA Fusion Energy Conference, Yokohama, 1998 (International Atomic Energy Agency, Vienna, in press), paper CN-69/TH2/1]. The additional physics is expected to influence the transport of both thermal and suprathermal electrons in a helical toroidal system. (author)

1999-02-01

Solution processable fluorenyl hexa-peri-hexabenzocoronenes in organic field-effect transistors and solar cells

Recently, organic semiconducting materials have gained a broad interest due to their potential for organic electronic devices such as organic light emitting diode (OLED), organic photovoltaic devices and organic field-effect transistors (OFETs). Optical properties of organic semiconducting materials are important for practical application. For example, the power conversion efficiency of organic photovoltaic devices is mainly affected by absorption properties of organic materials. Proton irradiation is one of the efficient methods to change the optical properties of organic materials. In this paper, we investigate the changes of optical properties of various polymers using the proton irradiation.

2009-05-15

Transport properties of single-crystalline n-type semiconducting PbTe nanowires

The organization of organic semiconductor molecules in the active layer of organic electronic devices has important consequences to overall device performance. This is due to the fact that molecular organization directly affects charge carrier mobility of the material. Organic field-effect transistor (OFET) performance is driven by high charge carrier mobility while bulk heterojunction (BHJ) solar cells require balanced hole and electron transport. By investigating the properties and device performance of three structural variations of the fluorenyl hexa-peri-hexabenzocoronene (FHBC) material, the importance of molecular organization to device performance was highlighted. It is clear from {sup 1}H NMR and 2D wide-angle X-ray scattering (2D WAXS) experiments that the sterically demanding 9,9-dioctylfluorene groups are preventing {pi}-{pi} intermolecular contact in the hexakis-substituted FHBC 4. For bis-substituted FHBC compounds 5 and 6, {pi}-{pi} intermolecular ...

2010-03-24

Refrigerator operating experience on whole body MRI magnet systems

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm"2 V"-"1 s"-"1 and 8.8 x 10"1"7 cm"-"3, respectively. The Seebeck coefficients (-72 ?V K"-"1) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.

2009-10-14

Optoelectronic devices grown by metallo-organic chemical vapor deposition

Several refrigerators for liquid helium and liquid nitrogen systems have been integrated successfully into IGC manufactured whole body Magnetic Resonance Imaging (MRI) magnet systems. The refrigerators have been tested in systems with magnetic fields of 0.6T to 1.5T. Tests were performed to study the effectiveness of the refrigerators, the magnetic field effects on the refrigerators, the effect of the refrigerators on the field uniformity and magnetic resonance image quality. The interface between the refrigerator and the whole body MRI magnet system cryostat was specifically designed to allow retrofit to the existing IGC magnet systems, while ensuring good heat transfer characteristics and good vibration isolation from the cryostat. The interface between the refrigerator and the cryostat and the refrigerator test results are presented.

1985-08-01

Mechanism of the electric field effect on the intensity of visible continuum emission from the positive column of gas discharge in a cesium vapor-xenon mixture

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

British Library Electronic Table of Contents (United Kingdom)

We have studied the nature of continuum emitted in the visible spectral range from a noncontracted positive column of discharge in a cesium vapor-xenon mixture at a pressure of 45 Torr and at a degree of ionization below 3 ? 10?6. The main contribution to the continuous emission under such conditions is due to electron-xenon atom bremsstrahlung. The intensity of emission has been experimentally and theoretically studied as a function of the electric field strength and electron density in the positive column. It is established that an increase in the visible emission intensity with the electric field strength is related to an increase in the number of hot electrons in plasma.

2007-01-01

Magnetic susceptibility and electrical properties of Ln/sub 2/3+x/TiO/sub 3+y/ (Ln = Ce, Nd) at 77-450/sup 0/K

Magnetic properties of RPd_2Si ternary compounds with (R = Gd, Tb, Dy, Ho and Er)

The magnetic susceptibility and electrical resistivity in cerium and neodymium titanate bronzes in Ln/sub 2/3+x/TiO/sub 3+y/ of the perovskite structure were investigated in the temperature range 77-450/sup 0/K. The deviation of the 1/x = f(T) dependence from the Curie-Weiss law, found for a majority of the compositions, was interpreted from the crystal-field effect based on the state of the Ce/sup 3 +/ and Nd/sup 3 +/ cations. For a number of the phases, a transition from metallic conductivity at high temperatures to semiconducting conductivity was detected at temperatures below 200-250/sup 0/K, which agrees well with the conclusion about the temperature dependence of x, related to the subsystem of Ti/sup 3 +/ cations.

1987-01-01

Magnetic properties of RPd/sub 2/Si ternary compounds with (R = Gd, Tb, Dy, Ho and Er)

Magnetic properties of polycrystalline samples of RPd_2Si compounds (R = Gd, Tb, Dy, Ho and Er) are presented. The Gd and Tb based compounds are antiferromagnetic with Neel temperatures of 13.5 and 21 K respectively. For both compounds a metamagnetic transition is observed in low field. Moreover, in TbPd_2Si a transition between two different antiferromagnetic phases is observed at 8.5 K. The Dy, Ho and Er based compounds are ferromagnetic with Curie temperatures of 9, 3.5 ad 2.8 K respectively. The observed properties result from indirect exchange interactions and crystal field effects acting on rare earth ions which lie in a very low symmetry site. (author).

High-speed, low-altitude payload delivery using a single large ribbon parachute

Magnetic properties of polycrystalline samples of RPd/sub 2/Si compounds (R = Gd, Tb, Dy, Ho and Er) are presented. The Gd and Tb based compounds are antiferromagnetic with Neel temperatures of 13.5 and 21 K respectively. For both compounds a metamagnetic transition is observed in low field. Moreover, in TbPd/sub 2/Si a transition between two different antiferromagnetic phases is observed at 8.5 K. The Dy, Ho and Er based compounds are ferromagnetic with Curie temperatures of 9, 3.5 ad 2.8 K respectively. The observed properties result from indirect exchange interactions and crystal field effects acting on rare earth ions which lie in a very low symmetry site.

1984-01-01

Antiferromagnetic Kondo lattice: CePdSi_2

A 46.3-ft-dia 20-degree conical ribbon parachute has been designed to retard a 2200-lb payload delivered at speeds up to 800 KCAS and at altitudes as low as 150 feet above ground level. The parachute uses both Kevlar and nylon materials, some of which were developed specifically for this parachute. The canopy design incorporates a patented construction geometry to minimize stress concentrations. A cluster of three 3.8-ft-dia ribbon parachutes is used to deploy the main parachute in the presence of severe aircraft flow field effects and large payload angles of attack. The results of over 30 full-scale flight tests indicate that fundamental limitations imposed by the dynamics of the air masses inside and behind the canopy determine the ultimate performance of a single large parachute when it is used at a release altitude of 150 ft.

1983-01-01

1 2 3 4

Anisotropic forming of magnetic powders mixed with ultraviolet resin; Shigaisen koka jushi wo mochiita jisei funmatsu no haiko seikei

The compounds CePdSi_2, CeIrSi_2 and CeRhSn_2 have been synthesized and studied by X-ray diffraction, electrical resistivity and magnetic susceptibility. The magnetic susceptibility of CePdSi_2 exhibits two peaks at 6.8 K and 2.5 K, respectively, indicating two antiferromagnetic phase transitions, while that of CeIrSi_2 shows a broad maximum at 150 K, characteristic of valence fluctuating Ce-compounds. CeRhSn_2 remains paramagnetic down to 5 K. The resistivity of CeIrSi_2 exhibits a T"2 dependence at low temperatures, indicating a Fermi-liquid ground state, while those of CePdSi_2 and CeRhSn_2 shows the presence of Kondo and crystal field effects. (orig.).

1996-08-19

AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures

For the purpose of solving the limitations such as shape and dimension for magnetic compact fabricated by conventional anisotropic forming under magnetic orienting field, the feasibility of a new magnetic forming process was studied. Ferrite powder mixed with UV resin was compacted in the die mold and followed by alignment under the magnetic field. Effects of viscosity of UV resin and forming condition on magnetic characteristics of the compact was investigated. Maximum degree of alignment for the ferrite powder reached to 0.826. It was predicted that the proposed method had make it possible to fabricate a high performance magnet having the anisotropic alignment of the magnetic powder. The UV resin is desirable to have low viscosity, good properties such as formability and configuration stability for the compact and also parting- ability between the metal mold and the compact. (author)

1999-01-15

British Library Electronic Table of Contents (United Kingdom)

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

2009-01-01

Field-effect research at the High Voltage Transmission Research Center

Dependence of mobility on shallow localized gap states in single-crystal organic field-effect-transistors

This report presents information obtained during five different studies of field effects from high voltage transmission lines performed at EPRI's High Voltage Transmission Research Center. The first study is the development of a methodology for the evaluation of the expected frequency of occurrence of specific short-term effects of spark discharges and induced currents caused by overhead high voltage transmission lines. The methodology is divided into the analysis of the expected frequency of occurrence of situations in which induction effects may occur, and the analysis of the expected severity of the effect. The second study is of the electric field in the surface and on the immediate proximity of the strands of stranded conductors used for overhead high voltage lines. In particular, the cases of deformations of stranded conductors, caused by air expansion or by popped out strands, are analyzed for the purpose of determining the ...

1991-02-01

The numerical simulation on low-level radioactive waste water, low-temperature cooling water drained effect of implement from the Daya Bay Nuclear Power Plant

In order to optimize the performance of molecular organic electronic devices it is important to study the intermolecular density of states and charge transport mechanisms in the environment of crystalline organic material. Using this approach in Field Effect Transistors (FETs) we show that material purification improves carrier mobility and decreases density of the deep localized electronic state. We also report a general exponential energy dependence of the density of localized states in a vicinity of the mobility edge (Fermi energies up to approx7 times higher than the thermal energy (kT)) in a variety of the extensively purified molecular organic crystal FETs. This observation and the low activation energy of the order of approxkT suggest that molecular structural misplacements of the sizes that are comparable with thermal molecular modes rather than impurity deep traps play a role in formation of these shallow states. We find that the ...

2009-12-15

Synthesis and photoluminescence properties of Sm3+-doped LaMgB5O10 and GdMgB5O10

In this paper, we calculated the radioactive concentration distribution of radioactive waste water, the temperature distribution of drained cooling water and the effect of implement from the Daya Bay Nuclear Power Plant on nearby waters range, discussed and analysed some problems of computational results and computation with Alternating Direction Implicit Method (ADI). The contents of the article included: the establishment of two-dimension tidal current equation, radioactive waste water pollutant dispersion equation and cooling water heat convection diffusion equation, the numerical difference calculation model of tidal current field, concentration field as well as temperature field, effect impingement with ADI method, numerical calculation results. The result of research showed that: when the Daya Bay Nuclear Power Plant is on normal operation and after the low level radioactive waste water and low temperature cooling water have been drained ...

Simulation of the crystal field effect on the Pr"3"+ ion in K_2La_1_-_xPr_xCl_5 ternary chlorides

Luminescence and reflection spectra as well as luminescence kinetics of the 1 mol% Sm3+-doped crystalline lanthanum magnesium meta borate (LaMgB5O10) and gadolinium magnesium meta borate (GdMgB5O10) were analyzed. Materials were synthesized by conventional solid state route and showed bright orange-red emission under UV excitation. Emission spectra contain sharp and well resolved Sm3+4G5/2#->#6HJ transitions indicating a strong crystal-field effect. In case of gadolinium compound energy transfer between Gd3+ and Sm3+ was detected. The luminescent kinetics of the Sm3+ in analyzed powders is characterized by single exponential decay and experimental values vary in the range 2.2-2.4 ms. - Research highlights: ? Phosphorescence of samarium-doped lanthanide magnesium meta borates. ? Bright and well resolved orange-red emission of Sm3+ under UV excitation. ? Energy transfer from Gd3+ to Sm3+ in gadolinium magnesium meta borate is observed. ? The ...

2011-07-01

Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds.

The high resolution absorption, luminescence and excitation spectra of the orthorhombic potassium lanthanum praseodymium ternary chloride, K_2La_1_-_xPr_xCl_5, (0.02 #<=# x #<=# 0.15) single crystals were recorded at 4, 77 and 293 K with different excitation sources. The experimental 4f"2 energy level scheme of the Pr"3"+ ion in K_2LaCl_5 derived from the absorption and emission spectra consisted of 86 (out of 91) Stark components. This energy level scheme was simulated by using a phenomenological crystal field (cf) model which included eight free ion and nine cf parameters according to the C_2_v symmetry. Despite the approximate C_2_v point symmetry instead of the real C_s one, the simulation yielded a very satisfactory rms deviation of 17 cm"-"1 between the experimental and calculated energy level schemes. The results, especially the weak cf strength, are discussed taking into account the bonding characteristics in K_2LaCl_5.

2004-10-20

Magnetic properties of Pr_2PdSi_3 single crystals

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method ...

2011-05-17

Large area, low capacitance Si(Li) detectors for high rate x-ray applications

Ternary R_2TSi_3 intermetallic compounds (R=Rare Earth, T=Transition Metal) with hexagonal AlB_2-type crystallographic structure are known because of their interesting physical properties. Pr_2PdSi_3 single crystals were grown by a vertical floating zone method. The compound exhibits congruent melting behavior at a liquidus temperature of about 1770 C. Single crystalline samples show a huge anisotropy at low temperatures due to the crystal electric field effect and order antiferromagnetically below the Neel temperature T_N=2.17 K. This value approximately obeys the linear de Gennes scaling for this class of compounds. The [001] orientation was identified as the magnetic easy axis at room temperature. At lower temperature (#approx#20 K) magnetic easy and hard axes interchange with each other. Two additional magnetic phase transitions were observed at temperatures below 1 K.

2010-03-21

Functional expression of anti-hepatitis B virus (HBV) preS2 antigen scFv by cspA promoter system in Escherichia coli and application as a recognition molecule for single-walled carbon nanotube (SWNT) field effect transistor (FET)

Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over conventional detectors. Detector fabrication ...

1992-10-01

British Library Electronic Table of Contents (United Kingdom)

The preS2 antigens of hepatitis B virus (HBV), which causes a serious health problem in the world, have been implicated in hepatocyte cell binding and viral penetration. Therefore, the importance of antibody production against preS2 antigen for early diagnosis of HBV has been well established. In this study, the recombinant HBV preS2 single chain variable fragment (scFv) antibody was successfully expressed in E. coli with the novel cold shock vector (pCold) under the cspA promoter, and its expression level was compared with the pET vector under the T7 promoter. Additionally, a host with an oxidizing cytoplasm, E. coli trxB/gor double mutant, was used to improve the soluble expression. The anti-HBV preS2 scFv using pCold vector was successfully expressed in a soluble and functional form in ...

2010-01-01

Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping

Electrochemical sulfur passivation of visible ([similar to]670 nm) AlGaInP lasers

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

2000-07-01

Electrochemical sulfur passivation of visible (#approx#670 nm) AlGaInP lasers

III--V based devices such as field effect transistors, heterojunction bipolar transistors, and lasers often have surface leakage and thermal degradation problems due to surface states which pin the Fermi level to the midgap. Sulfur based passivation processes are known to improve device performance by altering surface-state densities. We have developed a voltage-controlled anodic sulfur passivation scheme using Na[sub 2]S dissolved in ethylene glycol. Our process has repeatedly produced a [similar to]25% improvement in peak output power near the catastrophic damage limit in visible ([lambda]=670 nm) AlGaInP edge-emitting lasers. The threshold current density before and after passivation, and the [ital I]--[ital V] characteristics before and after catastrophic failure, were essentially unchanged indicating that passivation raises the threshold for facet damage.

1994-07-01

Electric characteristics of organic thin-film transistors and logic circuits with a ferroelectric gate insulator

III--V based devices such as field effect transistors, heterojunction bipolar transistors, and lasers often have surface leakage and thermal degradation problems due to surface states which pin the Fermi level to the midgap. Sulfur based passivation processes are known to improve device performance by altering surface-state densities. We have developed a voltage-controlled anodic sulfur passivation scheme using Na_2S dissolved in ethylene glycol. Our process has repeatedly produced a #approx#25% improvement in peak output power near the catastrophic damage limit in visible (#lambda#=670 nm) AlGaInP edge-emitting lasers. The threshold current density before and after passivation, and the I--V characteristics before and after catastrophic failure, were essentially unchanged indicating that passivation raises the threshold for facet damage.

Diffusion mechanism of implanted Be in GaAs

Organic electronic devices using a pentacene have improved importantly in the last several years. We fabricated pentacene organic thin-film transistors (OTFTs) with dielectric SiO{sub 2} and ferroelectric Pb(Zr{sub 0.3},Ti{sub 0.7})O{sub 3} (PZT) gate insulators. The organic devices using SiO{sub 2} and PZT films had the field-effect mobility of approximately 0.1 and 0.004 cm{sup 2}/V s, respectively. The drain current in the transfer curve of pentacene/PZT transistors showed a hysteresis behavior originated in a ferroelectric polarization switching. In order to investigate the polarization effect of PZT gate dielectrics in a logic circuit, the simple voltage inverter using SiO{sub 2} and PZT films was fabricated and measured by an output-input measurement. The gain of inverter at the poling-down state was approximately 7.2 and it was three times larger than the value measured at the poling-up state.

2007-07-16

Antiferromagnetic Kondo lattice: CePdSi{sub 2}

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of temperature, have been ...

2008-01-15

Anomalous phosphorus diffusion in Si during postimplantation annealing

The compounds CePdSi{sub 2}, CeIrSi{sub 2} and CeRhSn{sub 2} have been synthesized and studied by X-ray diffraction, electrical resistivity and magnetic susceptibility. The magnetic susceptibility of CePdSi{sub 2} exhibits two peaks at 6.8 K and 2.5 K, respectively, indicating two antiferromagnetic phase transitions, while that of CeIrSi{sub 2} shows a broad maximum at 150 K, characteristic of valence fluctuating Ce-compounds. CeRhSn{sub 2} remains paramagnetic down to 5 K. The resistivity of CeIrSi{sub 2} exhibits a T{sup 2} dependence at low temperatures, indicating a Fermi-liquid ground state, while those of CePdSi{sub 2} and CeRhSn{sub 2} shows the presence of Kondo and crystal field effects. (orig.). 5 refs.

1997-02-01

Simulation of the crystal field effect on the Pr{sup 3+} ion in K{sub 2}La{sub 1-x}Pr{sub x}Cl{sub 5} ternary chlorides

The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged phosphorus-interstitial pairs agree well with the obtained experimental results. {copyright} 2001 ...

2001-06-11

Paramagnetic susceptibility simulations from crystal field effects on Nd{sup 3+} in magnesium borate MgNd(BO{sub 2}){sub 5}

The high resolution absorption, luminescence and excitation spectra of the orthorhombic potassium lanthanum praseodymium ternary chloride, K{sub 2}La{sub 1-x}Pr{sub x}Cl{sub 5}, (0.02 {<=} x {<=} 0.15) single crystals were recorded at 4, 77 and 293 K with different excitation sources. The experimental 4f{sup 2} energy level scheme of the Pr{sup 3+} ion in K{sub 2}LaCl{sub 5} derived from the absorption and emission spectra consisted of 86 (out of 91) Stark components. This energy level scheme was simulated by using a phenomenological crystal field (cf) model which included eight free ion and nine cf parameters according to the C{sub 2v} symmetry. Despite the approximate C{sub 2v} point symmetry instead of the real C{sub s} one, the simulation yielded a very satisfactory rms deviation of 17 cm{sup -1} between the experimental and calculated energy level schemes. The results, especially the weak cf strength, are discussed taking into account the bonding characteristics in ...

2004-10-20

1 2 3 4

Optical second-harmonic generation in III-V semiconductors: Detailed formulation and computational results

From the crystal field analysis of optical absorption spectra on monoclinic S.G. P2{sub 1}/c MgNd(BO{sub 2}){sub 5}, where Nd{sup 3+} occupies a single crystallographic position with no symmetry elements, energy level schemes and an expression of the associated wavefunctions for the 4f{sup 3} configuration of Nd{sup 3+} have been derived, considering approximate C{sub 2v} and C{sub s} (C{sub 2}) symmetries. Despite of the low symmetry of Nd{sup 3+}, resulting rms deviations between calculated and experimental levels are very satisfactory. The composition of the crystal field wavefunctions from both sets of phenomenological free-ion and crystal field parameters has been checked through a calculation of the thermal evolution of the paramagnetic susceptibility {chi}, according to the Van Vleck formula. The same simulation was performed with crystal field parameters (CFPs) resulting from the ab initio simple overlap model (SOM), considering the Nd{sup 3+} real point symmetry, C{sub 1}. ...

1999-01-01

Magnetic excitations in R_2PdSi_3 studied by inelastic neutron scattering

In an earlier paper (Phys. Rev. Lett. 66, 41 (1991)), we calculated both the dielectric constant ({epsilon}{sub {infinity}}) and the nonlinear optical susceptibilities for second-harmonic generation ({chi}{sup (2)}) in the static limit for AlP, AlAs, GaP, and GaAs in the local-density approximation with and without a self-energy correction in the form of a scissors operator,'' including local-field effects. In this paper, we expand our presentation of this calculation. Agreement with experiment to within 15% for the nonlinear susceptibility is demonstrated where experiments are available (GaP and GaAs); the dielectric constants are in no worse than 4% agreement with experiment. The virtual hole'' contributions are reformulated to avoid large numerical cancellations in the case of near degeneracies. The virtual electron'' terms dominate over the virtual hole'' terms ...

1991-12-15

High-field MR imaging in the follow-up of patients with valvular and composite tubular aortic prostheses

R_2PdSi_3 compounds have been found to exhibit rich magnetic phenomena arising from the interplay between RKKY interaction, crystal electric field effects and geometric frustration due to the derived hexagonal AlB_2 structure. The observed crystallographic superstructure further complicates the CEF level scheme. Inelastic neutron scattering measurements on single crystals of Tm_2PdSi_3 and Er_2PdSi_3 have been performed at the cold triple axis spectrometer PANDA in FRM-II. Both compounds order antiferromagnetically at T_N=7 K and 2.1 K respectively; Er_2PdSi_3 undergoes a second phase transition at T_2=2 K. Several low lying CEF excitations (below 10 meV) were observed. The intensity of the lowest excitation show strong directional dependence (in HK0 plane for Er_2PdSi_3 and in HHL plane for Tm_2PdSi_3), from which the details of the transitional matrix could be deduced. Measurements in magnetic fields up to 13 T show Zeeman splitting of the ...

2009-03-22

High ion density plasma etching of InGaP, AlInP, and AlGaP in CH{sub 4}/H{sub 2}/Ar

Eleven patients who had undergone cardiac surgery were studied by means of high-field MR imaging (1.5 T). Six patients had aortic root and valve replaced with a Bjork-Shiley (BS) composite tubular aortic graft prosthesis for acute dissection of ascending aorta. In the other 5 patients with rheumatic calcific aortic disease, the valve had been replaced with a BS prosthesis. As a whole, MR studies were 14. Previous evaluations of magnetic field effects had seem carried out ex vivo on both BS valves and BS composite prostheses, on surgical ligation clips (Tantalium and Stainless) and on stainless wires for sternal closure. In 4 patients (2 BS composite grafts, and 2 BS valves) MRI diagnosed chronic dissection of both arch and descending aorta. In 1 of them, with a bs valve, associated localized acute dissection of ascending aorta was observed. In 3 patients with BS composite grafts, MRI revealed pseudo-aneurysms (including a thrombosed one) at the ...

Floating zone crystal growth of selected R2PdSi3 ternary silicides

High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light emitting diodes, field-effect transistors, and heterojunction bipolar ...

1996-03-01

Extended observation and analysis of the first overtone spectrum of solid parahydrogen

Substitution of various rare earths R within the class of R2PdSi3 single crystals with hexagonal AlB2-type crystallographic structure reveals the systematic dependence of anisotropic magnetic properties governed by the interplay of crystal-electric field effects and magnetic two-ion interactions. Here we compare the floating zone (FZ) crystal growth with radiation heating of compounds with R = Tb, Tm, Pr, and Gd. The congruent melting behavior enabled moderate growth velocities of 3 to 5 mmh-1. The preferred growth directions are close to the basal plane of the hexagonal unit cell. The composition of the crystals, except of Tb2PdSi3, is slightly Pd-depleted with respect to the nominal composition 16.7 at.% Pd. Thin precipitates of RSi secondary phases were detected in the crystal matrix. Their phase fraction can be diminished by growth from Pd-rich melt compositions and annealing treatments. The compounds exhibit antiferromagnetic order below ...

2011-06-01

Enhancement of long-term stability of pentacene thin-film transistors encapsulated with transparent SnO{sub 2}

The first overtone spectrum of solid parahydrogen with various low ortho impurity levels has been studied in detail using a White-type external multireflection system. For the Q{sub 2{l_arrow}0}(0) transition the authors have observed the fully resolved threefold splitting due to the crystal field effect. Furthermore, the authors have obtained a rich satellite spectrum associated with the transitions Q{sub 2{l_arrow}0}(0) and Q{sub 2{l_arrow}0}(1) at different ortho-H{sub 2} contents revealing information about the ortho-H{sub 2} pair interaction in the second vibrationally excited state of the hydrogen molecule. A preliminary analysis and assignment of these satellite transitions will be presented. Another point of study was the spectral region around 8300 cm{sup -1}, where the double transitions of the type Q{sub 1{l_arrow}0}(n) + Q{sub 1{l_arrow}0}(n{prime}) (n, n{prime} = 0,1) are located. The most remarkable features here are the Q{sub ...

1996-12-31

Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO{sub 2} thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm{sup 2}/(V s) that was initially 0.62 cm{sup 2}/(V s), when a buffer layer of thermally evaporated 100 nm SnO{sub 2} film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm{sup 2}/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 10{sup 5} to that of the unprotected devices ({approx}10{sup 4}) which was reduced from {approx}10{sup 6} before aging. Therefore, the enhanced long-term stability of our encapsulated ...

2005-12-15

Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are ...

1994-04-04

Crystal-field analysis of Eu"3"+ energy levels in the new rare-earth R BiY_1_-_xR_xGeO_5 oxide

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength ...

Comparative study of the crystal field effects in rare earth oxynitrates

Pale colored BiY_1_-_xR_xGeO_5 (R=rare-earth from Pr to Yb) polycrystalline samples exhibit a crystalline phase isostructural with the orthorhombic Pbca (No. 61) structure-type established for BiYGeO_5 and BiYbGeO_5. R occupies a single point site in the host, with the lowest C_1 symmetry. While for Pr and Nd x must be #<=#0.35, for smaller R ions, Sm to Yb, the phase appears for any x content. Detailed crystallographic data for BiErGeO_5 have been determined from the structure refinement of its neutron diffraction profile at room temperature. Optical absorption and photoluminescence measurements at 10 K have been performed for BiEuGeO_5. An initial approach to the parametrization of crystal-field effects on this new host has been provided by results of the semi-empirical Simple Overlap Model, which considers the crystallographic positions of the nearest neighbors around R. Furthermore, the strongly reduced "7F_J_M set of levels of the 4f"6 ...

2002-07-13

COLLAPSE AND FRAGMENTATION OF MOLECULAR CLOUD CORES. X. MAGNETIC BRAKING OF PROLATE AND OBLATE CORES

The photoluminescence spectra of the lanthanum and gadolinium oxynitrates doped with Eu[sup 3+], REONO[sub 3]:Eu[sup 3+] (RE=La and Gd) were measured at 77 and 300 K. The [sup 7]F[sub J] (J=0-5) energy level schemes for the 4f [sup 6] electron configuration were simulated by a C[sub 2v] phenomenological crystal field (CF). The nine non-zero CF parameters for the C[sub 2v] site symmetry reproduce the experimental energy level schemes with rms deviations of 7 and 5 cm[sup -1] for the LaONO[sub 3] and GdONO[sub 3] hosts, respectively. The CF effect is stronger in the lanthanum host although otherwise the CF parameters for the two oxynitrate hosts differ only slightly. The B[sup k][sub 2] (k=2, 4 and 6) values are low indicating only a slight deviation from a higher C[sub 4v] symmetry. The B[sup 2][sub 0], B[sup 4][sub 0] and B[sup 4][sub 4] parameters assume high values which are similar to those obtained previously for the other RE oxy compounds, i.e. oxyhalides, oxysulfates, ...

1994-06-01

Magnetic properties and magnetic ordering in the rare earth molybdenum(IV) pyrochlores: R_2Mo_2O_7

The collapse and fragmentation of initially prolate and oblate, magnetic molecular clouds is calculated in three dimensions with a gravitational, radiative hydrodynamics code. The code includes magnetic field effects in an approximate manner: magnetic pressure, tension, braking, and ambipolar diffusion are all modeled. The parameters varied for both the initially prolate and oblate clouds are the initial degree of central concentration of the radial density profile, the initial angular velocity, and the efficiency of magnetic braking (represented by a factor f _m_b = 10"-"4 or 10"-"3). The oblate cores all collapse to form rings that might be susceptible to fragmentation into multiple systems. The outcome of the collapse of the prolate cores depends strongly on the initial density profile. Prolate cores with central densities 20 times higher than their boundary densities collapse and fragment into binary or quadruple systems, whereas cores with ...

2009-06-01