International Nuclear Information System (INIS)

Chromium nitride thin films were deposited on SA-304 stainless steel substrates by using direct-current reactive magnetron sputtering. The influence of process conditions such as nitrogen content in the fed gas, substrate temperature, and different sputtering gases on microstructural characteristics of the films was investigated. The films showed (200) preferred orientation at low nitrogen content (< 30%) in the fed gas. The formation of Cr_2N and CrN phases was observed when 30% and 40% N_2 were used, with a balance of Ar, respectively. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the morphology and surface topography of the thin films, respectively. Microhardness tests showed a maximum hardness of 16.95 GPa for the 30% nitrogen content.

International Nuclear Information System (INIS)

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held ...

British Library Electronic Table of Contents (United Kingdom)

Amino-rich polymeric coatings are widely used in biomedical applications, since they promote adsorption of diverse biomolecules or facilitate cell growth. As a consequence, there is a growing interest in fabrication of such coatings that is focused predominantly on the optimization of the deposition process in terms of high density of primary amino groups. In addition, the nature of biomedical applications requires also sufficient stability of the films in aqueous environments. This aspect is investigated in this contribution. In particular, the effect of water and phosphate buffer saline on the coatings prepared by RF magnetron sputtering of Nylon 6,6 in Ar/N2 and N2/H2 gas mixtures is evaluated. The samples exposed to liquids are characterized by various diagnostic methods and their prop...

International Nuclear Information System (INIS)

The authors show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron system differs by a 90 deg C rotation. The origins of in-plane texture in rectangular magnetron ...

Energy Technology Data Exchange (ETDEWEB)

Highly resistant, high-transmittance woodceramic thin films were prepared using rf magnetron sputtering of a woodceramic disk in argon plasma. A film series was deposited based on substrate temperature, which was varied from 50 to 500 degree C. The film's electrical and optical properties depended on substrate temperature. Films deposited below 300 degree C were insulative, {rho}>10{sup 10} {omega} {center_dot} cm. Films deposited at 50 degree C had a density of 1.9-2.2 g/cm{sup 3} comparable to that of single crystal graphite. Below 200 degree C, films had higher transmittance than typical DLC films in the visible and infrared region. Infrared C-H absorption spectrum was observed by Ft-IR and there exist two types of bonding corresponding to sp{sup 2} or SP{sup 3}. (author)

International Nuclear Information System (INIS)

Nitrogen doped Diamond-like carbon thin films were deposited on n-Si and SiO_2 substrates by rf magnetron sputtering using pure graphite (99.999%) as the target material and mixtures of Ar, N_2 and H_2 for plasma generation. The dependence of structural and optical properties on nitrogen content was investigated using XPS, Raman spectroscopy, FT-IR spectroscopy, and Ellipsometry studies. It was found that as the nitrogen content was increased in the plasma, sp"2 bonding favored. Also it was observed that oxygen contamination increased with nitrogen content. Typical C-H stretching modes connected with diamond-like carbon could be seen in FT-IR spectra. The I_D and I_G bands were well defined and it was observed that as nitrogen content increased I_G band was enhanced. Ellipsometry studies revealed that the optical constants like refractive index (n) and extinction co-efficient (k) increased with increase in nitrogen content as well as substrate ...

International Nuclear Information System (INIS)

Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)

International Nuclear Information System (INIS)

Some magnetron sputtering systems experience rapid oscillations in the current and voltage of the plasma discharge after several hours when equipped with certain targets. These oscillations often lead to the plasma becoming extinguished, a condition known as ''flame-out.'' This article details the study of two 90% W--10% Ti magnetron targets which differed in density. The higher density targets sometimes experienced flame-out after approximately 3 h of sputtering. The less dense material could be sputtered for the entire 15 h life of the target. Scanning electron microscopy pictures and atomic composition depth profiles were obtained using Auger electron spectroscopy. In addition, a Colutron-based ion source with a high vacuum system was used to measure ion-induced secondary electron emission coefficients as a function of energy, ion specie, and gas coverage. Analysis of the sample ...

International Nuclear Information System (INIS)

Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.

CERN Document Server

In order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless-steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger electron spectroscopy during specific in situ thermal cycles. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy and the morphology (crystal structure and size of the crystallites) has been investigated by X-ray diffraction. The criteria indicating the sample quality and its dependence on film structure and chemical composition are presented and discussed. (13 refs).

International Nuclear Information System (INIS)

For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force ...

Energy Technology Data Exchange (ETDEWEB)

By magnetron sputtering model steel films with specific properties can be prepared for purposive surveys. By changing the deposition parameters certain properties of these films can be influenced. For this thesis steel films with 18% Cr and 8% Ni have been prepared in order to study specific parameters on the corrosion resistance of bulk stainless steel. Chemical composition, microstructure, and surface morphology of these films have been characterized. In comparison to bulk steel sheets with the same chemical composition they have a smaller grain size and a ferritic structure. In contrast to bulk steel sheets they don`t contain any nonmetallic inclusions like Mn-sulfides. The influence of these structural differences on the corrosion resistance has been studied. For this purpose the electrochemical properties of the sputter-deposited steels have been compared with the properties of steel sheets with a similar chemical ...

Energy Technology Data Exchange (ETDEWEB)

Thin films of new metastable materials from the system Ti-B-C-N were deposited on metallic substrates by d.c. magnetron sputtering in different Ar+N{sub 2} atmospheres. The multiphase compound targets used were based on various compositions on the TiC-TiB{sub 2} and TiB{sub 2}-C tie lines of the Ti-B-C phase diagram. The structure and chemical composition of the films were characterized by electron microprobe analysis, depth profiling Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy. The hardness, critical load of failure and the tribological behavior of the coatings were investigated. Superhard single-phase crystalline metastable Ti-B-C-N layers with hardness values exceeding 5000 HV{sub 0.05} and extremely low sliding wear against 100Cr6 and Al{sub 2}O{sub 3} counterparts could be produced by reactive sputtering of various TiC-TiB{sub 2} targets in Ar+N{sub 2} atmospheres with low ...

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

Energy Technology Data Exchange (ETDEWEB)

Duplex-coating procedures consisting of plasma nitriding and Me-C:H hard coating lead to an improved performance of the devices because the Me-C:H coating is supported by the nitrided phase and, therefore, the `eggshell-effect` is avoided. Furthermore, this support leads to a higher load-bearing capacity of the thin film. Two standard procedures (classical high-pressure plasma nitriding and unbalanced magnetron sputtering of Ti-C:H) were performed subsequently to prepare the duplex coatings on X20Cr13 ferritic stainless steel. The corrosion resistance of the steel could be improved by nitriding at 450 C compared to the untreated ferritic substrate. The roughness is determined by the nitriding step. The weakest point of the coating is the transition zone between the nitrided and the untreated substrate and not the interface between the Ti-C:H coating and the nitrided substrate as shown by the Rockwell and scratch tests. The adhesion of the ...

Science.gov (United States)

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found ...

British Library Electronic Table of Contents (United Kingdom)

The properties of ZnO films were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnO films decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnO films increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300degreeC were 2186cm and 798cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnO films annealed in vacuum and H2/Ar ambients at 600degreeC were similar with 0.040cm and 0.035cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnO films annealed in ambient H2/Ar at low temperatures. The average optical transmission was >82%...

Energy Technology Data Exchange (ETDEWEB)

The properties of polycrystalline (Ti, Al)N coatings deposited on non-nitrided, classically plasma-nitrided and low pressure plasma-nitrided AISI H11 steel samples were investigated. The plasma deposition and low pressure plasma nitriding were performed in a Z700-LH magnetron sputter ion plating unit, while a separate unit was used for plasma nitriding of specimens at a pressure of several millibars. The (Ti, Al)N coating was deposited onto all the samples using the same equipment as for the plasma deposition and low pressure plasma nitriding. For the characterization of the composite structures, the following methods were used: scratch test, X-ray diffraction analysis, scanning electron microscopy, scanning tunnelling microscopy and microhardness testing. It was found that plasma nitriding prior to coating deposition strongly affects the growth and properties of hard coatings, such as the microhardness, adhesion, preferred orientation, ...

Energy Technology Data Exchange (ETDEWEB)

Deposition of hard coatings may influence the mechanical properties of the bulk material and its corrosion resistance. In this work we study the hardness of the coated and the back side of 100Cr6 steel plates. Electrochemical corrosion tests were performed in O{sub 2}-saturated acetate buffer of pH 5.6 at 25degC. Chromium nitride and titanium nitride coatings prepared by different physical vapour deposition processes, such as arc, thermionic arc evaporation, magnetron sputtering and ion-beam-assisted deposition (IBAD) were compared. The results show that, for sufficient corrosion protection, chromium nitride layers have to be thicker than 500 nm. An increased nitrogen partial pressure in the evaporation chamber of the IBAD process improves the corrosion resistance significantly. The hardness of the substrates was reduced in the case of thermoionic arc evaporation only, indicating a deposition temperature of more than 250degC. For this process, ...

International Nuclear Information System (INIS)

Fe_5_0Pt_5_0 nanodots dispersed in a SiO_2 film (Fe_5_0Pt_5_0 nanodot film) were formed by a self-assembled nanodot deposition (SAND) method in which Fe_5_0Pt_5_0 and SiO_2 are cosputtered in a high vacuum rf magnetron sputtering equipment. Fe_5_0Pt_5_0 pellets are laid on a SiO_2 target in a sputtering chamber to form the Fe_5_0Pt_5_0 nanodot film in the SAND method. The size and density of Fe_5_0Pt_5_0 nanodot were controlled by changing the ratio of the total area of Fe_5_0Pt_5_0 pellets to that of SiO_2 target. The Fe_5_0Pt_5_0 nanodot size decreases and its density increases when the ratio decreases. As-deposited Fe_5_0Pt_5_0 nanodots self-assembled to a face-centered-cubic phase of single-crystal structure. The Fe_5_0Pt_5_0 nanodot films were annealed to evaluate the nanodot size controllability, the magnetic anisotropy, and the thermal stability. Fully ordered L1_0 face-centered-tetragonal Fe_5_0Pt_5_0 nanodots with ...

Energy Technology Data Exchange (ETDEWEB)

A systematic study of structure-mechanical properties relation is reported for MoSi{sub 2}-SiC nanolayer composites. Alternating layers of MoSi{sub 2} and SiC were synthesized by DC magnetron and rf-diode sputtering, respectively. Cross-sectional transmission electron microscopy was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: Crystallization and phase transformation of MoSi{sub 2}, crystallization of SiC, and spheroidization of the layer structures. Nanoindentation was employed to characterize the mechanical response as a function of structural changes. As-sputtered material exhibits amorphous structures in both types of layers and has a hardness of 11 GPa and a modulus of 217GPa. Subsequent heat treatment induces crystallization of MoSi{sub 2} to form the C40 structure at 500C and SiC to form the a structure at 700C. The crystallization process is directly ...

Energy Technology Data Exchange (ETDEWEB)

In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN ...

International Nuclear Information System (INIS)

The thermal stability of low-friction Me-C/a-C:H coatings is important for their potential applications in the tool and automotive industry. Recently we showed that CrC _x/a-C:H coatings prepared by unbalanced magnetron sputtering of a Cr target in Ar + CH_4 glow discharges exhibit a nanocomposite structure where metastable fcc CrC nanocrystals are encapsulated by an a-C:H phase. Here, we present the structural evolution of these nanocomposite CrC/a-C:H coatings during annealing. High-temperature X-ray diffraction in vacuum and differential scanning calorimetry (DSC) combined with thermo-gravimetric analysis in Ar atmosphere indicate decomposition of the formed metastable fcc CrC phase and subsequent formation of Cr_3C_2 and Cr_7C_3 and structural transformation of the a-C:H matrix phase towards higher sp"2 bonding contents at temperatures above 450 deg. C. Combined DSC and mass spectrometer analysis as well as elemental profiling after ...

Energy Technology Data Exchange (ETDEWEB)

Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with high compressive stress in the order of 4 GPa as well as a low adhesion, which ...

Energy Technology Data Exchange (ETDEWEB)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

International Nuclear Information System (INIS)

... electron guns linear accelerators magnetrons multivibrators pulse generators

Science.gov (United States)

Metastable yttrium-oxide films are synthesized using reactive sputter deposition. The yttrium concentration of the as-deposited film is found to vary as a function of the sputter deposition rate. In addition to the synthesis of the cubic equilibrium phase...

Energy Technology Data Exchange (ETDEWEB)

The bibliography contains citations concerning the properties of tantalum and tantalum compound films formed by sputtering techniques. Topics include processes, and electrical, magnetic, and dielectric properties of the sputtered films. Tantalum compounds studied include nitrates, oxides, and aluminides. The structural properties of sputtered films are also discussed. (Contains a minimum of 105 citations and includes a subject term index and title list.)

Energy Technology Data Exchange (ETDEWEB)

Swift heavy ion-solid interaction leads in volume to track creation and on the surface to the ejection of particles into the vacuum. To learn more about initial mechanisms of track formation, we are focused on the sputtering of uranium dioxide by fast heavy ions. This present study is exclusively devoted to the influence of the electronic stopping power on the emission of neutral particles and especially on their angular distribution. These measurements are completed by those of the ions emitted from UO{sub 2} targets bombarded with swift heavy ions. The whole experimental results give access to: i) the nature of the sputtered particles; ii) the charge state of the emitted particles; iii) the direction of ejection of the sputtered particles ; iv) the sputtering yields deduced from the angular distributions. These results are compared to the prediction of the sputtering models ...

Energy Technology Data Exchange (ETDEWEB)

The refractory nature and high ductility of body centered cubic (bcc) phase tantalum makes it a suitable material for corrosion- and wear-resistant coatings on surfaces that are subjected to high stresses and harsh chemical and erosive environments. Sputter deposition can produce thick tantalum films but is prone to forming the brittle tetragonal beta phase of this material. Efforts aimed at forming thick bcc phase tantalum coatings in both flat plate and cylindrical geometries by high-rate triode sputtering methods are discussed. In addition to substrate temperature, the bcc-to-beta phase ratio in sputtered tantalum coatings is shown to be sensitive to other substrate surface effects.

Energy Technology Data Exchange (ETDEWEB)

The main physical processes allowing negative ion production by surface sputtering for further acceleration in tandem acceleration are briefly reviewed. The sputtering yield and the probability of negative ion ejection are discussed. The properties of negative ion beams for an efficient acceleration in tandem accelerators are also discussed, with an emphasis on space charge problems. The main features and performances of the heavy negative ion injector of the Bucharest tandem accelerator are given.

International Nuclear Information System (INIS)

Modeling is performed for focused-ion-beam (FIB) sputtering and redeposition on trench sidewalls in a steady state approximation. Calculations are carried out to demonstrate the sputtered surface profile under known parameters such as sputtering yield as a function of ion incident angle, the FIB current density profile, and the FIB scan speed. It is found that a steplike slope with a gradient angle of #theta#_0 is formed at the FIB bombarding position. Furthermore, the redeposition flux on the sidewalls is calculated as a function of #theta#_0 for the FIB trench milling assuming the cosine law for the angular distribution of the sputtered atom. The redeposition will be more accurately predictable and controllable when more information about these assumptions is obtained.

Energy Technology Data Exchange (ETDEWEB)

A radio frequency sputtering apparatus with a pair of targets has been developed for depositing a film of uniform thickness onto a complex-geometric specimen such as the retainer of a ball bearing. The deposition characteristics of the apparatus were compared with those of the conventional sputtering apparatus. Lubrication properties of MoS/sub 2/ films made by these devices were also compared under a variety of conditions. Finally, friction and wear of MoS/sub 2/ films applied to angular-contact type ball bearings of 20 mm bore were studied in air, nitrogen and vacuo. The two-target sputtering has an advantage mentioned above. However, the films deposited by the method exhibited a rather short wear life because of the temperature rise of the substrate during ion bombardment and during the sputtering process. This temperature dependence was observed in films on those substrates that had been heated with ...

Energy Technology Data Exchange (ETDEWEB)

Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

International Nuclear Information System (INIS)

The results of an investigation on the production of Group IIA atomic and molecular negative ion beams formed in a cesium-sputter negative ion source are presented. The sputtering material was formed by pressing pellets of stoichiometric mixtures of the Group IIA element carbonates and 10% copper powder. Negative ions of several alkaline-earth elements and their oxides have been observed. Beam intensities as high as 180 pA have been observed for Sr"-and 20 nA for SrO"-. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Average emittance data for ion beams extracted from cesium-sputter negative ion sources equipped with spherical, ellipsoidal, and cylindrical geometry cesium-surface ionizers are presented. The attributes of the respective source geometries are described in terms of their cesium ion optical properties. The results of recent measurement of the emittances of momentum-analyzed beams extracted from the ellipsoidal geometry source are also presented. These measurements indicate the presence of a species-dependent effect. The effect is believed to be attributable to differences in the energy spreads of the respective negative ion beams introduced by the sputter generation process. 11 refs., 8 figs.

Energy Technology Data Exchange (ETDEWEB)

Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

Science.gov (United States)

Sputtering of glass coatings on cadmium sulfide thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

The Sputter coefficient of accelerated CO{sub 2} cluster ions hitting surfaces of various materials is investigated. For copper it varies proportional to the 2nd power of the energy between 155 and 260 keV. The rate of erosion for different target materials varies by two orders of magnitude from tungsten to PMMA. Diamond is eroded fairly quickly, while aluminum is eroded less than corundum (Al{sub 2}O{sub 3}). No simple correlation of the sputter coefficient on the bulk material properties is found. For copper the angular distribution of sputtered material is measured and found to be following roughly a cosine distribution. By using masks different microstructures have been produced in cobalt-samarium magnets, diamond and glass. (orig.)

International Nuclear Information System (INIS)

We have measured K-edge X-ray absorption spectra of argon in sputtered aluminum films at a synchrotron radiation facility (the Photon Factory). We found that the energy and shape of white line change when the film is annealed at 500 C and the spectrum becomes resembling that of argon implanted in silicon. From the analyses of the X-ray absorption spectra and TEM observation we concluded that argon exists as very small atom clusters with a diameter less than 1 nm or exist as isolated atoms in the as-sputtered aluminum film, and that the size of the clusters become as big as 10 nm diameter when the film is heated. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

British Library Electronic Table of Contents (United Kingdom)

Lithium phosphorous oxynitride(Lipon) thin films as a lithium ion conductive electrolyte were prepared by radio frequency reactive sputtering in N2 plasma. The properties of the amorphous Lipon solid electrolyte were investigated as a function of N2 pressure during reactive sputtering. The ionic conductivity and the electrochemical stability of Lipon thin films improved drastically as the N2 pressure decreased. The ionic conductivity closed to 10?6 S cm?1 and obtained a stability window of 1.0?5.0 V with an N2 pressure of 5 mTorr, where the number of nitrogen bonds between the phosphate groups were more than those formed at higher pressure. It was possible to fabricate the Li//LiCoO2 complete thin film battery using this Lipon solid electrolyte, which exhibited excellent discharge characte...

International Nuclear Information System (INIS)

In this work, amorphous hydrocarbon (a-C:H) film deposition on metallic mirrors was studied during working shots in tokamak T-10 and at exposure in Ar/CHD3/D2 dc magnetron discharge in a special laboratory high vacuum setup. Analysis of film composition (including hydrogen content) was carried out using nuclear physical methods. Thickness and optical parameters (refractive and extinction coefficients) of the films were estimated by ellipsometry. Laboratory films can be characterized as soft a-C:H films in comparison with hard tokamak films (? = 1.2 and 1.8 g/cm3, respectively). For the first one, a linear dependence of deposition rate on mirror temperature was observed in a wide temperature range. The addition of methane into initial Ar/D2 magnetron gas mixture leads to an increase of deposition rate. The data obtained should be taken into account to prevent hydrocarbon film formation on the surface of first mirrors in ITER.

International Nuclear Information System (INIS)

The KAERI compact far-infrared (FIR) free-electron laser (FEL) has been operated successfully in the wavelength range of 97-150 #mu#m. It is the first demonstration of FEL lasing by using a magnetron-based classical microtron. We developed a high precision undulator consisting of 80 periods, with each period being 25 mm. The field strength of the undulator can be changed from 4.5 to 6.8 kG with an amplitude deviation of only 0.05% in r.m.s value. The kinetic energy of the electron beam is 6.5 MeV. The average current and pulse duration of the electron beam macropulses are 45 mA and 5.5 #mu#s, respectively. The measured power of the FEL with the electron beam parameters was more than 50 W for a FIR macropulse having a duration of 4 #mu#s. The spectral width of the FEL was measured to be 0.5% of the central wavelength. The FEL system, aside from the racks for the controlling units, is compact enough to be located inside an area of 3x4 m"2.

Energy Technology Data Exchange (ETDEWEB)

A multicusp magnetic field plasma surface ion source, normally used for H/sup -/ ion beam formation, has been utilized for the generation of high intensity, pulsed, heavy negative ion beams suitable for a variety of uses including tandem electrostatic accelerator/synchrotron injection applications. Sputter probe voltage limited total ion currents of 5.5, 8.2, 5.1 and 4.5 mA (peak intensity) have been produced from Au, Cu, Ni and CuO sputter probes, respectively. The mass distributions of these ion beams are found to be dominated by Au/sup -/, Cu/sup -/, Ni/sup -/ and O/sup -/ atomic species, respectively. The source offers the interesting prospect of providing cw negative ion beams at mA intensity levels of the commonly used semiconducting material dopants (e.g. B/sup -/, P/sup -/, As/sup -/ and Sb/sup -/) as well as O/sup -/ for isolation barrier formation. Illustrative examples of intensity versus time and the mass distribution of ion beams ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

Aluminium nitride (AlN) is a very interesting ceramic because of its combination of properties such as high thermal stability, high hardness and an unusual combination of high thermal and low electrical conductivity. But it is very difficulty to obtain an AlN layer on the aluminium substrates by thermochemical nitriding process. Since a thin film of aluminium oxide existing on the surface of every aluminium substrate prevents the nitrogen atoms from diffusing into the aluminium lattice. However, it is possible to sputter the oxide film away from the aluminium surface in a glow discharge with the use of plasma nitriding technique and to allow the formation of AlN layer on the aluminium bulk. In the present work specimen of aluminium Al 99.5 has been plasma nitrided in a modified plasma nitriding unit, in which a diffusion pump was used to obtain an especially low partial pressure of oxygen in the vauum chamber. The sputter-cleaning prior to the ...

International Nuclear Information System (INIS)

Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.

Energy Technology Data Exchange (ETDEWEB)

Two sources of negative ions are described. An rf source produces up to 14 ..mu..A beams of He/sup -/ by charge exchange in Rb vapor. The other Source of Negative Ions by Cesium Sputtering (SNICS) produces a wide variety of negative ion beams in the ..mu..A range. Two important features of SNICS are its simple, compact construction and its very good beam emittance (2 to 4..pi..mm mrad MeV/sup 1/2/). Both sources have lifetimes >200 hours and they are used extensively on the Wisconsin EN tandem.

Energy Technology Data Exchange (ETDEWEB)

To improve mirrors coating, we have modeled sputtering of binary oxide targets using TRIM code. First, we have proposed a method to calculate TRIM input parameters using on the one hand thermodynamic cycle and on the other hand Malherbe`s results. Secondly, an iterative processing has provided for oxide steady targets caused by ionic bombardment. Thirdly, we have exposed a model to get experimental sputtering yields. Fourthly, for (Ar - SiO{sub 2}) pair, we have determined that steady target is a silica one. A good agreement between simulated and experimental yields versus ion incident angle has been found. For (Ar - Ta{sub 2} O{sub 5}) pair, we have to introduce preferential sputtering concept to explain discrepancy between simulation and experiment. In this case, steady target is tantalum monoxide. For (Ar - Ta+O{sub 2}) pair, tantalum sputtered by argon ions in reactive oxygen atmosphere, we have to ...

Energy Technology Data Exchange (ETDEWEB)

Modifications to the reference concept were studied and the best approaches defined. The impact of the high efficiency multibandgap solar array on the reference concept design is considered. System trade studies for several solid state concepts, including the sandwich concept and a separate antenna/solar concept, are described. Two solid state concepts were selected and a design definition is presented for each. Magnetrons as an alternative to the reference klystrons for dc/rf conversion are evaluated. System definitions are presented for the preferred klystron and solid state concepts. Supporting systems are analyzed, with major analysis in the microwave, structures, and power distribution areas. Results of studies for thermal control, attitude control, stationkeeping, and details of a multibandgap solar cell study are included. Advanced laser concepts and the meteorological effects of a laser beam power transmission concept are considered.

International Nuclear Information System (INIS)

We have studied the correlation between the chemical state and the oxygen-sensing properties of an iron oxide thin film using a setup that allows simultaneous sensor resistance measurements and X-ray photoelectron spectroscopy (XPS) data acquisition. The gas exposures were performed at the highest operating pressure of the XPS spectrometer at a controlled sample temperature which allows direct comparison between the sensor response and the chemical state of the surface. The iron oxide film was modified by a sequence of argon ion sputtering steps and the induced changes in the chemical state, resistance, and sensitivity to oxygen were investigated. The sputtering was found to reduce the iron from the Fe"3"+ to the Fe"2"+ state and to decrease the sensor resistance. The measured sensitivity to oxygen first increased by a factor of two but then collapsed to its original level. The mechanism for oxygen sensing was found to be filling of the oxygen ...

International Nuclear Information System (INIS)

Recently developed oxygen O18 method [K. Franzreb, J. Lorincik, P. Williams, Surf. Sci. 573 (2004) 291; R.C. Sobers, K. Franzreb, P. Williams, Appl. Surf. Sci. 231-232 (2004) 729; P. Williams, R.C. Sobers Jr., K. Franzreb, J. Lorincik, Appl. Surf. Sci. 252 (2006) 6429] is able to quantitatively determine the flux ratio of oxygen to matrix species at dynamical SIMS sputtering. This flux ratio can be directly related to the surface oxygen concentration at dynamical sputtering - an important parameter controlling the ionization yield of emitted species. It is argued that the oxygen O18 method is a worthy step forward in gathering relevant experimental data that might eventually lead to the understanding of oxygen enhancement mechanism in SIMS. A current status of understanding of the ionization processes in SIMS is briefly discussed in terms of non-adiabatic strongly velocity dependent processes represented by the electron tunneling and ...

Energy Technology Data Exchange (ETDEWEB)

This report discusses the development of transition metal oxide semiconductors for photoelectrolysis of water. More specifically, it involves preparation of TiO/sub 2/ films by sputtering and evaluating their physicochemical characteristics primarily as they relate to the behaviour of the films as photoanodes. Impedance, photoelectrochemical, and photoconduction properties of TiO/sub 2/ films sputtered in pure O/sub 2/ onto heated substrates have been determined as a function of O/sub 2/ pressure during sputtering, film thickness, Pt overcoating, and cathodic treatment. The capacitance data before cathodic treatment are of the form expected. The capacitance is essentially independent of potential, while for potentials increasingly cathodic of this value, the capacitance increases very rapidly. Cathodic treatment alters the impedance characteristics of the films but leads to either no detectible change in their ...

International Nuclear Information System (INIS)

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

Energy Technology Data Exchange (ETDEWEB)

A focused ion beam (FIB) is used to accurately sculpt predetermined micron-scale, curved shapes in a number of solids. Using a digitally scanned ion beam system, various features are sputtered including hemispheres and sine waves having dimensions from 1-50 {micro}m. Ion sculpting is accomplished by changing pixel dwell time within individual boustrophedonic scans. The pixel dwell times used to sculpt a given shape are determined prior to milling and account for the material-specific, angle-dependent sputter yield, Y({theta}), as well as the amount of beam overlap in adjacent pixels. A number of target materials, including C, Au and Si, are accurately sculpted using this method. For several target materials, the curved feature shape closely matches the intended shape with milled feature depths within 5% of intended values.

Energy Technology Data Exchange (ETDEWEB)

The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA.

International Nuclear Information System (INIS)

Technology of plasma sputtering, structure and properties of zirconium dioxide coatings were studied. Necessity of void number increase to enhance coating heat-resistance is shown. Optimal powder particle size (20-60 #mu#m) providing optimal coating porosity was determined. Weight part of stabilizating oxide (Y_2O_3) in ZrO_2 for formation in coating of microcracks serving as barriers for macro-cracks propagation was determined.

Energy Technology Data Exchange (ETDEWEB)

Focused ion beam (FIB) systems prove to be useful precision micromachining tools for a wide variety of applications. This micromachining technique includes scanning ion microscopy (SIM), micromachining by physical sputtering, and the ion-beam induced surface chemistry for etching and deposition. This technique is applied to image and modify IC's, to micromechanical applications, to modify the tip shape of tungsten emitters, and to prepare cross sections of selected regions for inspection in a transmission electron microscope (TEM). (orig.)

Energy Technology Data Exchange (ETDEWEB)

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

Energy Technology Data Exchange (ETDEWEB)

The Versatile Toroidal Facility (VTF) is a large laboratory plasma machine of 1 meter major radius used to carry out investigations of ionospheric plasma turbulence. Spectral analysis has been performed on plasmas produced by the electron emitters. Interest has focused on the low frequencies below the lower hybrid resonance where ion acoustic and current-convective modes have been observed. Microwaves injected from a 3,000 watt magnetron produce dramatic changes to the low frequency spectrum. First, the parametric decay instability intensifies the ion acoustic modes in the region of plasma heated by the microwaves. Second, the normally dominant current-convective modes are greatly suppressed in the heated region due to the oscillating electric field of the pump wave. When the authors probe beyond the heated region, these two pump wave effects are no longer observed, presumably because the microwaves are denied access to beyond the heated region due to the high ...

International Nuclear Information System (INIS)

The energy distribution of ion beams is important especially for low energy ion beam applications. The energy distributions of negative-ion beams produced through secondary ion emission by sputtering were measured and compared with theoretically estimated distributions by use of four different negative-ion production probability equations (modified surface ionization model, exponential velocity dependence model, and our modified exponential velocity dependence models (modified decaying factor model and combination model of velocity dependence and surface ionization)). In the measurements, the energy distributions of C"- and Ag"- beams had a peak at a few to several eV and the full width at half maximum were 15 eV and 11 eV, respectively. These results could be well explained by the estimated distributions by virtue of our combination model or the modified surface ionization model. copyright 1996 American Institute of Physics.

International Nuclear Information System (INIS)

Superconductivity of binary alloys spanning the A-15 compounds V_3Si, V_3Ge, V_3Ga, and V_3Al and the pseudobinary derivatives of these stoichiometric compounds was surveyed by studying samples prepared by rf-sputtering from alloy cathodes. The possible formation of the hypothetical A-15 binaries ''V_3P,'' ''V_3B,'' and ''V_3C'' and their pseudobinary formation with V_3Si was also explored. Efforts to form these hypothetical alloys were not successful. The T/sub c/'s were measured resistively and the structure and lattice constants were determined by x-ray analysis. A maximum T/sub c/ of 11.7"0K was obtained for A-15 V_3Al, and the importance of a suitable deposition temperature and high sputtering pressures was examined. It is proposed that large variations of T/sub c/ among pseudobinary alloys imply a rapid variation of the density of states at the Fermi level.

Energy Technology Data Exchange (ETDEWEB)

A versatile, high brightness, volume type, low power RF source, capable of producing positive ion beams with intensities as high as 1 mA from gaseous feed materials and microamperes of negative ion beams has been characterized. The source can also be operated as a plasma sputter negative ion source to generate up to 1 mA of a selected species. The performance of the source in the positive and negative volume modes of operation can be greatly enhanced by addition of a removable, water cooled filament assembly in place of the negative sputter probe. For examine, the material utilization efficiencies of gaseous feed species can be more than doubled, total current intensities increased up to 40%, molecular dissociation fractions increased by 20% and minimum operating pressures reduced by a factor of four when operated in the volume mode. These added electrons also favorably effect, as a consequence of lower pressures, the emittance apparently ...

Energy Technology Data Exchange (ETDEWEB)

Nano-wire arrays of Niobium were produced by small angle sputtering on facetted sapphire, using the self shadowing effect of the facets. A wire width of about 80 nm was adjusted, the mean (maximum) wire height was about 20 nm (30 nm), the length can be in the cm range. Meander-film morphologies of 20 nm mean (26 nm maximum) thickness were produced by conventional sputtering onto smooth sapphire substrates at elevated temperatures. The morphology of the wires was investigated with atomic force microscopy (AFM), using contact mode. Meander-films were studied by scanning tunnelling microscopy (STM). Hydrogen loading was performed by instantaneously increasing the hydrogen gas pressure above the solubility limit. Thus, an elongated hydride could be monitored in an about 30 nm thick wire. STM studies on meander-films show the presence of cylindrical hydrides. Local out-of-plane and in-plane expansion can be explained by the formation of hydrides, ...

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other ...

Energy Technology Data Exchange (ETDEWEB)

The composition of sputter-deposited HgS films was determined by electron microprobe analysis. From the relative x-ray intensity as a function of film thickness, the depth of the ionizations that produce SK sub(..cap alpha..) and HgM sub(..cap alpha..) was found to be approximately 0.65 ..mu..m at an accelerating voltage of 15 kV. This value agreed well with a value calculated from Castaings' empirical law after absorption correction. The determination of film composition was limited to sufficiently thicker films than this critical value, usually 1 - 2 ..mu..m thick. The relation between the conposition of bulk standard determined by chemical analysis and the x-ray intensity ratio was used for the correction of film composition. The results showed that the crystal structure of HgS films was independent of the composition, i.e., the growth of metastable ..beta..-HgS films was not caused by the nonstoichiometry, and that the composition of ..cap alpha..-HgS ...

Energy Technology Data Exchange (ETDEWEB)

A multicusp magnetic field plasma surface ion source, normally used for H/sup /minus//ion beam formation, has been modified for the generation of high-intensity, pulsed, heavy negative ion beams suitable for a variety of uses. To date, the source has been utilized to produce mA intensity pulsed beams of more than 24 species. A brief description of the source, and basic pulsed-mode operational data, (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure), are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low discharge power conditions suggest that sources of this type may also be used to produce high-intensity (mA) dc beams. The results of these investigations are given, as well, and the technical issues that must be ...

Energy Technology Data Exchange (ETDEWEB)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

Energy Technology Data Exchange (ETDEWEB)

The composition and thickness of etch residues on the base of submicrometer via holes cannot be surmized from data on larger features. Auger sputter depth profiles were used to compare etch residues in 0.55 {mu}m via holes produced by different etch processes and remaining after different cleans. These residues varied significantly in composition and thickness with the processing history of the sample and from those on larger features. A focused ion beam (FIB) sample preparation was developed to expose the bases of via holes and to help reduce sample charging. (author).

Energy Technology Data Exchange (ETDEWEB)

An RF plasma sputter type heavy negative ion source, which can deliver mA-class negative ion beams (12.1 mA, 1.6 mA and 2.3 mA for Cu{sup -}, C{sup -} and C{sub 2}{sup -} currents, respectively) in dc-mode operation, has been developed. In ion source, a dense plasma of 10{sup 11} cm{sup -3} order was generated in the xenon gas pressure of 10{sup -3}-10{sup -2} Pa with an rf (13.56 MHz) power of 200 - 300 W by using an RF coil, and a relatively large sputtering target of 42 mm in diameter was used. As for intense negative ion beams of silicon or boron which are important dopants for semiconductor fabrication, negative ion extraction properties of the negative ion source was investigated. The extracted total negative ion currents of 4.4 mA for a silicon target and 2.8 mA for a LaB{sub 6} target were obtained after electrons were eliminated by magnetic field near the extraction hole. From results of mass-analysis, it was found that Si{sup -} ...

International Nuclear Information System (INIS)

The introduction of oxygen in the vicinity of a metallic target surface, bombarded with positive argon ions of twenty kiloelectron-volts, increases the number of sputtered atoms in the excited state. This phenomenon of exaltation, very sensitive in the case of nickel and aluminium, is much less marked in the case of molybdenum. Moreover, the emission of excited particles coming from the beam's ions is not modified. A quantum-mechanical model of a kinetic emission process, which permits the interpretation of the clean metallic target's emission phenomena, seems insufficient to explain all of the results obtained in the presence of oxygen. In this last case one can therfore use a thermodynamic model in which excited metallic particles can be formed directly by chemical surface reactions of neutralization or reduction. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

Energy Technology Data Exchange (ETDEWEB)

Carbon films have been made by a variety of techniques, including evaporation, sputtering, and laser or thermal pyrolysis of organic polymers. Polyacrylonitrile (PAN) is often used as a carbon precursor, since low-temperature thermo-oxidative pretreatment produces a material which can be pyrolyzed without loss of shape. This is the basis for the production of carbon fibers with good mechanical properties. We report here the formation of very thin films of carbon (500 to 1500 A) by pyrolysis of spin-cast PAN. Using this technique, large, conductive films can be made which are sufficiently robust to allow intact lift-off and transfer of the films from one substrate to another. Such films are chemically inert, but can be photolithographically patterned and etched with an oxygen plasma.

Energy Technology Data Exchange (ETDEWEB)

We have investigated via SQUID magnetometry and polarised neutron reflectivity the exchange-bias effect in CoO/Co sputtered multilayers. In particular, we studied the magnetisation reversal and the time relaxation of the exchange-bias field close to the coercive field H{sub c1}. Neutron intensities of all four cross sections (I++, I+-, I-+, I-) were recorded at the position of the first multilayer Bragg peak while scanning the magnetic field. From such scans we infer that the magnetisation reversal for the ascending as well as for the descending branch of the magnetic hysteresis occurs not by in-plane rotation but through domain-wall movements. The exchange-bias field, H{sub EB}, is strongly affected by thermal fluctuations. H{sub EB} decreases, following an exponential decay function with a half-life time of about 580 s at T=240 K. (orig.)

International Nuclear Information System (INIS)

Highly ordered arrays of Ni nanoholes and Fe20Ni80 antidots have been prepared, respectively, by replica/antireplica processing and sputtering techniques using nanoporous alumina membranes as templates. Geometrical characteristics as nanohole/antidot diameter, interpore distance and the overall hexagonal symmetry of arrays are controlled through the original templates. Experimental data on their hysteresis and magnetic domain structure have been taken by vibrating sample magnetometry and magnetic force microscopy, respectively. An analysis of the magnetization process, resulting magnetic anisotropy and magnetic domain structure is summarized considering the influence of those geometry aspects. In particular, the hexagonal symmetry and the density of nanohole/antidots determine the overall magnetic behavior, which is of interest in future high-density magnetic storage systems.

Energy Technology Data Exchange (ETDEWEB)

The optical emission of excited H reflected from clean Cu(110) after impingement of H/sup +/ and H/sub 2//sup +/ in the energy range of 250 eV to 20 keV per nucleon at 70/sup 0/ angle of incidence to the surface normal was measured. For incident 10 keV H/sub 2//sup +/, the highest excited hydrogen state detected was the n=10 level. The Hsub(..cap alpha..) yield was found to be fluence and energy dependent. This effect is attributed either to fast sputtered hydrogen, surface roughness or to an increase with hydrogen concentration in electron states of p-like symmetry near the Fermi level of copper. The Hsub(..cap alpha..) yield per reflected nucleon shows approximately an exponential dependence on both projectile energy per nucleon and scattered particle reciprocal velocity perpendicular to the surface.

International Nuclear Information System (INIS)

A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500 degrees C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period.As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions.

International Nuclear Information System (INIS)

Focussed ion beam (FIB) processing has been applied to the fabrication of novel InP-based cleaved coupled cavity (CCC) quantum cascade lasers (QCL). Gas assisted etching using XeF_2 has been shown to significantly reduce the redeposition of sputtered material onto the mirror surfaces during final milling. For the unprocessed laser a broad spread of lasing peaks are observed between 9.72#mu#m to 9.78#mu#m at a current of 380mA (1kA/cm"-"2). After FIB processing, substantial side mode suppression is observed on applying a current of 20mA (100A/cm"-"2) to the short section and the main lasing peak is observed at 9.77#mu#m.

International Nuclear Information System (INIS)

The authors present an investigation of structural changes occurring in bilayer stacks with crystalline columnar growth when one of the layers is substituted by layers known to grow amorphous. In Co/Cu multilayers the Co layers were substituted by CoZr layers of varying Zr content and layer thickness. Structural characterization was performed by transmission electron microscopy (TEM). They show that the amorphization of the CoZr layers leading to a destruction of the columnar growth depends both on the Zr content and on the thickness of the CoZr layers. Additionally a change to textured growth with a normal to the substrate occurs with increasing Zr content. They explain their observations by a simple picture based on the hard sphere model.

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

International Nuclear Information System (INIS)

Composite nitrides (such as BN, TiN) are widely used in various industrial applications because of their extreme wear and corrosion resistance, thermal and electrical properties. in order to obtain composite materials with these optimal properties, it is important to elucidate whether any chemical reactions occur at nitride/metal interfaces, e.g., those involving BN-Ti/TiN. Materials of interest include the deposition by PVD of Ti and TiN on BN substrates. Some of these systems were then subjected to varying degrees of physical and thermal alteration. Detailed X-ray photoelectron spectroscopy (XPS) has therefore been rendered of these interfaces using cross-sectional display and sputter etching. Resulting structural and morphological features have been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). Diffusion of the nitridation, oxynitride formation and interfacial growth are of general interest.

Energy Technology Data Exchange (ETDEWEB)

PVD-coatings based on TiB{sub 2} are expected to show high wear resistance and low tendency of adhesion on metal forming tools. Coating adhesion and morphology can be modified over a wide range by varying the content of nitrogen (N{sub 2}) and the deposition parameters power and bias voltage. All coatings were deposited using commercial unbalanced magnetron equipment, the deposition was homogeneous in a volume of 400 x 400 x 400 mm{sup 3}. Hipped and hot pressed TiB{sub 2}-targets were used, nitrogen (N{sub 2}) was added as gas, Ti and Al by a solid Ti-Al-target. The tribological behaviour was tested by a pin-on-disc wear test. The coatings investigated were TiB{sub 2}, TiAlB(N), TiAl(N) and TiB{sub 2}/TiAl(N). As counterpart in the pin-on-disc wear test, 6 mm diameter spheres of steel (100Cr6), aluminium, brass and bronze were used. The experiments showed a non-uniform wear behaviour. For the combinations TiAlB(N) and TiB{sub 2} versus aluminium, a low wear volume ...

Science.gov (United States)

High quality La/sub 1.8/Sr/sub 0.2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 ..mu..m thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF/sub 2/, Si, CaF/sub 2/, ZrO/sub 2/-9% Y/sub 2/O/sub 3/, BaF/sub 2/, Al/sub 2/O/sub 3/, and SrTiO/sub 3/. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa/sub 2/Cu/sub 2/O/sub 7/ structure, in the case of SrTiO/sub 3/ substrate. The best substrates were those that ...

International Nuclear Information System (INIS)

The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputtered films. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10_0K temperature wave is applied), performed at two ambient temperatures (80 and 300_0K), yielding the differential dielectric function. The sputtered films included Nb"3Ge, Nb"3Al, V"3Ga and Nb"3Ir. It is noted that Nb"3Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V"3Si, V"3Ge and single crystal Cr"3Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with the absorptance measurements in comparison to band structure ...

Energy Technology Data Exchange (ETDEWEB)

The aim of this work was to develop a method to distinguish between different ion formation processes and to determine the influence of these processes on the total number of detected monatomic ions of a certain element. A vector/matrix-formalism was developed, which describes the physical processes of sputtering, ion formation, mass separation and detection in laser-SNMS. In the framework of the method developed, based on this theoretic formalism, changes in the secondary flux contribution of the respective element were observed by comparing the detected monatomic ion yield obtained in specifically aligned (SIMS and) laser-SNMS experiments. The yields resulting from these experiments were used to calculate characteristic numbers to compare the flux composition from different surfaces. The potential of the method was demonstrated for the elements boron, iron and gadolinium by investigating the changes in the flux composition of secondary particles ...

International Nuclear Information System (INIS)

Several metallurgical coatings have been developed that provide good tribological performances in high-temperature liquid sodium and that are relatively unaffected by neutron fluences to 6 X 10/sup 22/ n/cm/sup 2/ (E > 0.1 MeV). The coatings that have consistently provided the best tribological performance have been the nickel aluminide diffusion coatings created by the pack cementation process, chromium carbide or Tribaloy 700 trade mark (a nickel-base hardfacing alloy) applied by the detonation-gun process, and chromium carbide and other hardfacing alloy) applied by the detonation-gun process, and chromium carbide and other hardfacing materials applied by the electro-spark deposition process. The latter process is a relatively recent development for nuclear applications and is expected to find wide usage. Other coating processes, such as plasma-spray coating, sputtering, and chemical vapor deposition, were candidates for use on various components, but the ...

International Nuclear Information System (INIS)

This paper deals with the characterization of passive films formed on stainless steel (26% Cr and 0 to 3%Mo). The influence of the applied passivation potential and the effect of molybdenum additions to steel upon the composition profiles of passive films formed in an aqueous NaCl solution (3.5% at pH 2.5) are studied. The technique involved is Auger electron spectroscopy combined with ion sputtering. Some electrochemical techniques have been used in conjunction. A quantitative approach of the Auger spectra during the progressive removal of the passive film is described. The peak-to-peak height of the Auger lines are treated in order to yield the atomic fraction of the various elements present in a given subsurface layer. The analytical study of the film by electron spectroscopy indicates that molybdenum plays a part at the metal-oxide interface where this element acts on the chromium diffusion process. This phenomenon, which depends on the imposed potential, may ...

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering spectra (RBS) showing the oxide film and composition isothermally ...

Energy Technology Data Exchange (ETDEWEB)

A systematic study was made on MoSi{sub 2}-based nanolayer coatings. Alternating layers with thickness 1-20 nm were prepared by sputtering. Nitrided MoSi{sub 2} has a very high crystallization temperature, >1000 C, and MoSi{sub 2}Nx (x=3-4) can be used as a stable second phase reinforcement or diffusion barrier coatings. Mechanical properties depend strongly on phase and morphology of the layers: hardness and modulus is significantly increased in the crystallization. The nanolayers have much higher hardness but lower modulus (which project higher toughness in the nanolayers). Wear resistance is improved with decreasing layer thickness. Single phase MoSi{sub 2}Nx (x=0-4.2) has a wide range of hardness and modulus with varying N content and annealing, suggesting the possibility of engineering MoSi{sub 2}Nx to produce different material properties for different mechanical applications. Most of this paper is made up of viewographs.

Energy Technology Data Exchange (ETDEWEB)

The Ti and Ti-Al coatings were deposited onto hot-worked AISI H11 steel substrates and plasma nitrided at 900 C. The Ti coated samples were successfully nitrided, while cracking and delamination of the Ti-Al coating was observed during nitriding. The formation of [delta]-TiN and [epsilon]-Ti[sub 2]N phases were detected after plasma nitriding of the Ti coating. During plasma treatment of the Ti-Al coating, the initial Ti[sub 3]Al and Al phases were paartially transformed into TiAl phase. The martensite transformation of the substrate material was found. The as-deposited Ti coating has a fibrous structure, while the structure of the as-sputtered Ti-Al coating is columnar. The superficial Vickers microhardness of plasma-nitrided Ti coating was 2200 HV 0.03 and the critical load of higher than 50 N indicates very good coating-to-substrate adhesion. (orig.)

Energy Technology Data Exchange (ETDEWEB)

The enhancement of positive secondary ion yields of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In/sup +/ were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5x10/sup 15/ to 4x10/sup 16/ O-atoms/cm/sup 2/. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si/sup +/ intensity is proportional to c(O)sup(x) (with x=1.4) in the concentration regime, 1.5<=c(O)<=30 at%. The O/sup +/ intensity shows a similar dependence for c(O)> or approx.20 at.%.

International Nuclear Information System (INIS)

Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si"+ "+ FIB also indicated the possibility to produce submicrometer patterns by selectively modifying film properties from superconductive to normal or insulting.

CERN Document Server

An in-plane uniaxial magnetic anisotropy has been observed in thin Co films normally deposited onto obliquely sputtered Ta and Pt underlayers. Associated with this anisotropy is an augmented easy axis coercivity. The in-plane easy axis is, in most cases, perpendicular to the incident deposition plane. Microstructural results indicate that grains are well connected along the magnetic easy axis but are separated by long continuous voids along the hard axis, which is ascribed to a geometric shadowing effect due to the oblique incidence deposition of the underlayer. Hence, the magnetic anisotropy mimics the film growth anisotropy. It is therefore believed that the observed magnetic properties are due to magnetostatic shape anisotropy effects. In-plane coercivity and anisotropy field are shown to increase with underlayer deposition angle, underlayer thickness and magnetic layer thickness. The choice of capping layer is also observed to dramatically alter the magnetics, ...

Energy Technology Data Exchange (ETDEWEB)

The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the HRIBF because of its low emittance, relatively high ionization efficiencies and species versatility, and because it has been engineered for remote installation, removal ...

Energy Technology Data Exchange (ETDEWEB)

A brief description of a method for producing relatively intense molecular negative ion beams for the difficult Group IIA elements is given which offers considerable improvement in terms of source operation and beam intensity stability over other methods conventionally utilized. It is particularly suited for use in cesium plasma sources such as the Aarhus geometry and axial geometry versions of the source. The method utilizes H/sub 2/ source feed gas for the production of a hydrogen-rich plasma discharge which sputters a negatively biased probe made of elemental or copper alloy material. Negative ion beams of MgH/sub 3//sup -/>=12 ..mu.. A have been realized during routine operation of the 25 MV tandem accelerator. Negative ion beam intensity data, typical source operational parameters, and examples of mass spectra associated with their production are given. Interesting intermetallic molecular negative ion beams consisting of the particular Group IIA element and ...

International Nuclear Information System (INIS)

Focused Ion Beams are an important approach for nanostructure fabrication in the semiconductor industry and material sciences. Applications in sputtering and ion induced deposition of materials are investigated. The IMSA FIB system equipped with the high resolution Orsay Physics CANION M31plus ion column with current densities up to 10 A/cm"2 including a gas injection system is applied. In this work the ion beam induced chemical vapour deposition of tungsten, wherefore tungsten hexacarbonyl as precursor gas is used for a first investigation. Conductive tungsten-nanowires with smallest cross-section upon a substrate of Si and SiO_2 are produced. The ion beam parameters of this focused ion beam system are optimized for the metal deposition. A short insight in the theory of layer nucleation and growth induced by the ion beam during the metal deposition is given. The layer quality is determined by Auger electron analysis which shows the components in atomic percent ...

International Nuclear Information System (INIS)

Electron probe microanalysis (EPMA) offers high sensitivity and high accuracy in quantitative measurements of chemical compositions and mass coverages. Owing to the low detection limits of the wavelength-dispersive technique, monolayers with mass coverages of about 0.05 pg cm z can be detected. Assuming a density of 5 g cm--3 this corresponds to a thickness of 0.1 nm. With these advantages in mind, EPMA was extended to depth profile analysis in the sub-micron range using a surface removal technique. The present paper shows how depth profile analysis can be improved by combining EPMA and the focused ion beam (FIB) technique. The focused ion beam system uses a Ga+ ion beam. The ion beam allows the milling of defined geometries on the nanometer scale, so that very shallow bevels with exactly defined angles in relation to the surface can be obtained. Low surface damage is expected due to low sputtering effects. Calibrated WDX measurements along the bevel deliver ...

Energy Technology Data Exchange (ETDEWEB)

Most of the organic electronic devices are nowadays fabricated under poor vacuum conditions. In this regard, there is only little knowledge about the impact of contamination of the metal electrode on the charge injection barrier in this kind of electronic devices. In our study we have performed X-ray and ultra violet photoemission spectroscopy (XPS, UPS) on interfaces between the organic semiconductor -sexithiophene and sputter cleaned (ideal) metals as well as contaminated (realistic) metals. As metal substrates we have used silver, gold, palladium, and platinum. These metals provide us a wide range of metal work functions from 4.2 eV for silver up to 5.5 eV for platinum. For all interfaces of -sexithiophene and contaminated metals we have observed a reduction of the interface dipole and the hole injection barrier. The charge injection barrier in all four cases is almost independent of the underlying metal (within an error of 0.2 eV) and the interface dipole ...

International Nuclear Information System (INIS)

Computational fluid dynamics are applied to the study of three-dimensional fluid flow in a dense medium plasma reactor (DMPR) under different operating conditions. Reaction mechanisms and rates for the removal of methyl t-butyl ether (MTBE) in a DMPR are developed from experimental data to determine the plasma volume, the rate of interphase mass transfer and the photolysis rate of MTBE via UV emission from the plasma. The simulations utilize the plasma volume determined from the kinetic data to show that the volume of fluid in contact with the plasma in the DMPR only constitutes a maximum of approximately 10% of the fluid intended to be cycled through the plasma tubules. The simulations also predict appreciable pressure gradients on the surface of the pin electrodes, resulting in a small discharge area located away from the region in which the electric field strength is a maximum. This result has been confirmed indirectly through observation in that the pin electrodes ...

International Nuclear Information System (INIS)

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H_2SO_4). Alloys with two nitrogen doses have been prepared (2.5x10"1"6 and 2x10"1"7 N atoms/cm"2). The implanted alloys have been characterized by "1"5N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical behaviour of the alloy. The anodic dissolution in the active state is enhanced, and the ...

Energy Technology Data Exchange (ETDEWEB)

This study attempts to elucidate some of the effects of adding argon, neon and hydrogen to low pressure thermionically supported discharges used for plasma nitriding AISI M2 steel substrates. Four runs were performed at the same substrate temperature (550 C) and bias voltage (500 V), using the following gas mixtures: 8% N{sub 2} in Ar, 8% N{sub 2} in Ne, N{sub 2}+H{sub 2} in equal proportions, and N{sub 2} only. By careful control of the discharge parameters, most of the bombardment energy was transported to the substrates by 500 eV ions in all cases; these were mainly Ar{sup +} ions in the N{sub 2}+Ar run and N{sub 2}{sup +} ions in the other runs, notably by the action of Penning ionization in the N{sub 2}+Ne run. We found that the surface hardness was not significantly influenced by the type of ion delivering the bombardment energy, although we suggest that ions would need sufficient mass to cause (for example) sputtering, if the substrate is susceptible to ...

International Nuclear Information System (INIS)

In this paper, we report on a comparative study of active screen plasma nitriding (ASPN) and conventional dc plasma nitriding (CPN) behavior of 30CrNiMo8 low-alloy steel that has been examined under various process conditions. The process variables included active screen setup parameters (screen and iron plate top lids placed on the screen setup with 8 mm of hole size), treatment temperature (550 and 580 deg. C), gas mixture (75/25 and 25/75 of N_2/H_2) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the diffusion zone and compound layer were studied by X-ray diffraction (XRD), microhardness tests, light optical microscopy and scanning electron microscopy (SEM). It was observed that treated sample surfaces in both CPN and ASPN methods consist of #gamma#' and #epsilon# phases, and while the nitriding time and/or temperature increases, the intensity of #epsilon# phase in the compound layer will increase for ASPN and decrease for CPN method. ...

International Nuclear Information System (INIS)

Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic microstructures, such as magnetic 'C' states and magnetic vortices, found at surfaces of FIB patterned ...

International Nuclear Information System (INIS)

In analysis of hydrogen in metals and alloys by SIMS, control of the hydrogen blank mainly due to residual gases is a persistent problem. Contrarity, this problem becomes less important in case of deuterium analysis. The prescribed amounts of deuterium were introduced into a pure titanium and a beta-titanium alloy (Ti- 6.6wt%Fe) by the gas reaction method. Intensities of the various secondary ions sputtered from each sample were measured by the Hitachi Ion Microanalyzer with primary ions of Ar"+. Energy distributions of the various secondary ion species were measured with the energy window of about 15eV width. The effects of oxygen gas pressure in the target chamber and the bulk deuterium concentration on the shape of energy distribution curves are discussed. For all samples, intensity of D"- ions is higher than that of D"+ ions, especially at higher energy ranges. With increasing the deuterium concentration: a) intensities of D"+ and D"- ions from Ti-D system ...

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation ...

International Nuclear Information System (INIS)

Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high nitrogen contents are introduced in the outermost layer of the ...

International Nuclear Information System (INIS)

This paper presents the present status of R and D activities on plasma facing components for fusion reactors, such as International Thermonuclear Experimental Reactor (ITER) and fusion demonstration reactor (DEMO). The plasma facing components (PFCs) as typified by divertor and first wall components are subjected to high heat flux and particle flux from fusion plasma. It is essential for these components to have sufficient heat removal capability and robust structure against those loadings. JAEA has been carried out to develop the ITER-PFCs which consist of copper alloys and armor materials with high thermal conductivity, such as carbon fiber composites, tungsten and beryllium. The demonstration of the thermomechanical performance of the ITER-PFCs by using mock-ups has successfully been made under close mutual cooperation between the participant countries of ITER. Currently, the activity on the development of the ITER-PFCs is in a qualification phase prior to the bulk production for ...

Energy Technology Data Exchange (ETDEWEB)

The objective of the current study was the gradual development of the formation of the nitride layer during inductive r.f. plasma nitriding. The study centers on characterization of refined layers and plasma diagnostics in the vicinity of the sample, and raises critical questions of how the layers and interfacial microstructure might affect the near-surface properties. The composition of the plasma near the surface of the sample (plasma layer) was examined by optical emission spectroscopy and mass spectrometry during plasma nitriding and while sputtering the sample after the nitriding process. It was observed that during the nitriding process, the plasma layer contains Ti, NH[sub n] species, N (or/and N[sup +]), H[sub n] species (or/and H[sup +][sub 2]). However, when the nitrided sample was exposed to argon plasma, Ti, Al and NH were observed. It was found that two distinct sublayers, comprising [delta]-TiN and [delta]-TiN + [epsilon]-Ti[sub 2]N phases, were ...

Energy Technology Data Exchange (ETDEWEB)

Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se){sub 2} ('CIGSSe')-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E{sub g} in the absorber layer is demonstrated. The modification of E{sub g} towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is considered. Between CIGSSe ...

Energy Technology Data Exchange (ETDEWEB)

Computation of effective flow properties of fluids in porous media based on three dimensional (3D) pore structure information has become more successful in the last few years, due to both improvements in the input data and the network models. Computed X-ray microtomography has been successful in 3D pore imaging at micron scale, which is adequate for many sandstones. For other rocks of economic interest, such as chalk and diatomite, submicron resolution is needed in order to resolve the 3D-pore structure. To achieve submicron resolution, a new method of sample serial sectioning and imaging using Focused Ion Beam (FIB) technology has been developed and 3D pore images of the pore system for diatomite and chalk have been obtained. FIB was used in the milling of layers as wide as 50 micrometers and as thin as 100 nanometers by sputtering of atoms from the sample surface. The focused ion beam, consisting of gallium ions (Ga+) accelerated by potentials of up to 30 kV and ...

Energy Technology Data Exchange (ETDEWEB)

This report is the 1992 annual progress report for the Energy Conversion and Storage Program, a part of the Energy and Environment Division of the Lawrence Berkeley Laboratory. Work described falls into three broad areas: electrochemistry; chemical applications; and materials applications. The Energy Conversion and Storage Program applies principles of chemistry and materials science to solve problems in several areas: (1) production of new synthetic fuels, (2) development of high-performance rechargeable batteries and fuel cells, (3) development of advanced thermochemical processes for energy conversion, (4) characterization of complex chemical processes and chemical species, and (5) study and application of novel materials for energy conversion and transmission. Projects focus on transport-process principles, chemical kinetics, thermodynamics, separation processes, organic and physical chemistry, novel materials, and advanced methods of analysis. Electrochemistry research aims to ...

Energy Technology Data Exchange (ETDEWEB)

The Energy Conversion and Storage Program applies chemistry and materials science principles to solve problems in (1) production of new synthetic fuels, (2) development of high-performance rechargeable batteries and fuel cells, (3) development of advanced thermochemical processes for energy conversion, (4) characterization of complex chemical processes, and (5) application of novel materials for energy conversion and transmission. Projects focus on transport-process principles, chemical kinetics, thermodynamics, separation processes, organic and physical chemistry, novel materials, and advanced methods of analysis. Electrochemistry research aims to develop advanced power systems for electric vehicle and stationary energy storage applications. Topics include identification of new electrochemical couples for advanced rechargeable batteries, improvements in battery and fuel-cell materials, and the establishment of engineering principles applicable to electrochemical energy storage and ...

International Nuclear Information System (INIS)

A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (#chi#"2) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done on (i) ion-implanted Si-wafers to ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby silicide growth occurs in small increments and ...

Energy Technology Data Exchange (ETDEWEB)

The partial oxidation of 1,3-butadiene has been investigated over VMoO catalysts synthesized by sol-gel techniques. Surface areas were 9-14 m{sup 2}/g, and compositions were within the solid solution regime, i.e. below 15.0 mol % MoO{sub 3}/(MoO{sub 3} + V{sub 2}O{sub 5}). Laser Raman Spectroscopy and XRD data indicated that solid solutions were formed, and pre- and post-reaction XPS data indicated that catalyst surfaces contained some V{sup +4} and were further reduced in 1,3-butadiene oxidation. A reaction pathway for 1,3-butadiene partial oxidation to maleic anhydride was shown to involve intermediates such as 3,4-epoxy-1-butene, crotonaldehyde, furan, and 2-butene-1,4-dial. The addition of water to the reaction stream substantially increased catalyst activity and improved selectivity to crotonaldehyde and furan at specific reaction temperatures. At higher water addition concentrations, furan selectivity increased from 12% to over 25%. The catalytic effects of water addition were ...

International Nuclear Information System (INIS)

An IAEA databank lists a number of reported cases of illicitly trafficked nuclear or other radioactive materials. Apart from the traditional concern with nuclear proliferation, the post September 11th public is now wary of a possible attack by terrorists with a nuclear or radiation dispersion device (RDD). Until now, the seized quantities have not been sufficient to manufacture a nuclear explosive device, but they might be enough to construct an RDD. Recognizing the latent global challenge to public health and safety, the G8 States (Japan, USA, Germany, France, UK, Italy, Canada, and Russia) have called for 'joint international efforts to identify and suppress illicit supply' of, and demand for, nuclear material and to deter potential traffickers. One measure gaining in significance is to identify seized material and trace it back to its origin the objective of an emerging science known as nuclear forensics. Repeatedly nuclear or other radioactive material of unknown origin are ...