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The crystallite size and orientation in molybdenum films prepared by magnetron sputtering at a low rate of typical 1 (angstrom)s and a pressure of 0.45 Pa was investigated by X-ray diffraction and texture analysis. The surface topography was studied using atomic force microscopy. Increasing the film thickness from 20 nm to 3 microm, the films show a turnover from a (110) fiber texture to a (211) mosaic-like texture. In the early state of growth (20 nm thickness) the development of dome-like structures on the surface is observed. The number of these structures increases with film thickness, whereas their size is weakly influenced. The effect of texture turnover is reduced by increasing the deposition rate by a factor of six, and it is absent for samples mounted above the center of the magnetron source. The effect of texture turnover is related to the bombardment of the films with high energetic argon neutrals resulting from backscattering at the ...

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A complex modulated structure is described for reactive elements that have the capability of considerably more heat than organic explosives while generating a working fluid or gas. The explosive and method of fabricating same involves a plurality of very thin, stacked, multilayer structures, each composed of reactive components, such as aluminum, separated from a less reactive element, such as copper oxide, by a separator material, such as carbon. The separator material not only separates the reactive materials, but it reacts therewith when detonated to generate higher temperatures. The various layers of material, thickness of 10 to 10,000 angstroms, can be deposited by magnetron sputter deposition. The explosive detonates and combusts a high velocity generating a gas, such as CO, and high temperatures. 2 figs.

International Nuclear Information System (INIS)

Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a ...

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International Nuclear Information System (INIS)

The corrosion behavior of the sputter-deposited amorphous or nanocrystalline W-Nb alloys is studied in 10% NaCl, 0.1 and 1 M NaOH solutions at 24 deg. C, open to air using immersion tests and electrochemical measurements. Niobium metal acts synergistically with tungsten in enhancing the corrosion resistance of the W-Nb alloys so as to show lower corrosion rates than the corrosion rates of the alloy-constituting elements in almost all examined solutions. Corrosion rates of W-Nb alloys are about more than one order of magnitude less than that of the sputter-deposited tungsten and even lower than that of sputter-deposited niobium. The stability of the anodic passive films formed on the W-Nb alloys increase with niobium content.

International Nuclear Information System (INIS)

The variation in the superconducting properties of various binary alloys of transition metal-germanium systems was surveyed by studying sputter deposited samples prepared under various conditions. The primary interest has been to study the formation of the stoichiometric A-15 compounds T_3Ge.

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The refractory nature and high ductility of body centered cubic (bcc) phase tantalum makes it a suitable material for corrosion- and wear-resistant coatings on surfaces which are subjected to high stresses and harsh chemical and erosive environments. Sputter deposition can produce thick tantalum films but is prone to forming the brittle tetragonal beta phase of this material. Efforts aimed at forming thick bcc phase tantalum coatings in both flat plate and cylindrical geometries by high-rate triode sputtering methods are discussed. In addition to substrate temperature, the bcc-to-beta phase ratio in sputtered tantalum coatings is shown to be sensitive to other substrate surface effects.

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The composition of sputter-deposited HgS films was determined by electron microprobe analysis. From the relative x-ray intensity as a function of film thickness, the depth of the ionizations that produce SK sub(..cap alpha..) and HgM sub(..cap alpha..) was found to be approximately 0.65 ..mu..m at an accelerating voltage of 15 kV. This value agreed well with a value calculated from Castaings' empirical law after absorption correction. The determination of film composition was limited to sufficiently thicker films than this critical value, usually 1 - 2 ..mu..m thick. The relation between the conposition of bulk standard determined by chemical analysis and the x-ray intensity ratio was used for the correction of film composition. The results showed that the crystal structure of HgS films was independent of the composition, i.e., the growth of metastable ..beta..-HgS films was not caused by the nonstoichiometry, and that the composition of ..cap alpha..-HgS ...

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The dispersion of more than 20 vol pct submicrometer ceramic particles within a metallic matrix and the deposition of such a cermet to form a thick and tough coating presents problems. Most of the coating techniques have failed in attempting to homogeneously disperse very fine and hard particles in large amounts while avoiding their decomposition or reaction with the metal matrix during the deposition process. A simple and efficient method has been developed for producing ceramic-containing composite coatings. It consists in synthesizing cermet-based materials and in depositing them by a rapid solidification process, such as thermal spraying. Boride- and carbide-based materials have been successfully obtained by plasma spraying reactive powders comprising the basic reagents. These materials, with a microstructure of submicrometer ceramic particles dispersed in a metallic matrix, exhibit good wear-resistant properties (abrasion and sliding wear). Finally, reactive core wire arc spraying ...

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New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. Homojunction GaAs solar ...

International Nuclear Information System (INIS)

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. The ...

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Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

International Nuclear Information System (INIS)

Nano structured carbon nitride thin films were deposited at different RF powers in the range of 50 W to 225 W and constant gas ratio of (argon: nitrogen) Ar:N_2 by RF magnetron sputtering. The atomic percentage of Nitrogen: Carbon (N/C) content and impedance of the films increased from 14.36% to 22.31% and 9 x 10"-"1 #OMEGA# to 7 x 10"5 #OMEGA# respectively with increase in RF power. The hardness of the deposited films increased from 3.12 GPa to 13.12 GPa. The increase in sp"3 hybridized C-N sites and decrease of grain size with increase in RF power is responsible for such variation of observed mechanical and electrical properties.

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Both the sign and magnitude of residual stress can vary with the thickness of sputter deposited films. The origins of this behavior are not well understood. In this work, the authors consider the correlation between the residual stress behavior and the depth dependence of impurities in thin (2.5 nm--150 nm) sputtered Mo and Ta films. They also consider the effects of phase transformations and microstructural changes on the stress behavior. Films were deposited onto Si substrates with native oxide. The residual stress observed in the Mo films varied from highly compressive at 2.5 nm film thickness to {approximately}0 at 10 nm thickness. Ta films also exhibited a high compressive stress, which relaxed from highly compressive to tensile between 10 nm and 50 nm film thickness. Impurities in the films may originate from the sputtering targets, the background gases, and the substrate surfaces. Auger Electron Spectroscopy (AES) results showed the ...

International Nuclear Information System (INIS)

In this work, amorphous hydrocarbon (a-C:H) film deposition on metallic mirrors was studied during working shots in tokamak T-10 and at exposure in Ar/CHD3/D2 dc magnetron discharge in a special laboratory high vacuum setup. Analysis of film composition (including hydrogen content) was carried out using nuclear physical methods. Thickness and optical parameters (refractive and extinction coefficients) of the films were estimated by ellipsometry. Laboratory films can be characterized as soft a-C:H films in comparison with hard tokamak films (? = 1.2 and 1.8 g/cm3, respectively). For the first one, a linear dependence of deposition rate on mirror temperature was observed in a wide temperature range. The addition of methane into initial Ar/D2 magnetron gas mixture leads to an increase of deposition rate. The data obtained should be taken into account to prevent hydrocarbon film formation on the surface of first mirrors in ITER.

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Highly resistant, high-transmittance woodceramic thin films were prepared using rf magnetron sputtering of a woodceramic disk in argon plasma. A film series was deposited based on substrate temperature, which was varied from 50 to 500 degree C. The film's electrical and optical properties depended on substrate temperature. Films deposited below 300 degree C were insulative, {rho}>10{sup 10} {omega} {center_dot} cm. Films deposited at 50 degree C had a density of 1.9-2.2 g/cm{sup 3} comparable to that of single crystal graphite. Below 200 degree C, films had higher transmittance than typical DLC films in the visible and infrared region. Infrared C-H absorption spectrum was observed by Ft-IR and there exist two types of bonding corresponding to sp{sup 2} or SP{sup 3}. (author)

International Nuclear Information System (INIS)

The KAERI compact far-infrared (FIR) free-electron laser (FEL) has been operated successfully in the wavelength range of 97-150 #mu#m. It is the first demonstration of FEL lasing by using a magnetron-based classical microtron. We developed a high precision undulator consisting of 80 periods, with each period being 25 mm. The field strength of the undulator can be changed from 4.5 to 6.8 kG with an amplitude deviation of only 0.05% in r.m.s value. The kinetic energy of the electron beam is 6.5 MeV. The average current and pulse duration of the electron beam macropulses are 45 mA and 5.5 #mu#s, respectively. The measured power of the FEL with the electron beam parameters was more than 50 W for a FIR macropulse having a duration of 4 #mu#s. The spectral width of the FEL was measured to be 0.5% of the central wavelength. The FEL system, aside from the racks for the controlling units, is compact enough to be located inside an area of 3x4 m"2.

International Nuclear Information System (INIS)

High quality Nb_3Sn films have been fabricated using a recently developed magnetron sputtering process capable of deposition rates approaching 1 #mu#m/min at sputtering voltages less than 500 V and power levels of about 5 KW. Low sputtering voltages allow more complete thermalization at lower pressures of the material condensing on the substrate which can improve long range order. Transition temperatures of up to 18.3"0K, J/sub c/(0)'s of 15 x 10"6 A/cm"2 and Hc_2 as high as 240 k0e have been achieved in 1-3 #mu#m films deposited from a Nb_3Sn reacted powder target with substrate temperatures between 600 and 800"0C. The films exhibit smooth surfaces and, generally, a (200) preferred orientation. The growth of the film is columnar in nature. The sputtering parameters, substrate material and temperature will be related to film structure, T/sub c/ and J/sub c/(H,T) and the Nb/Sn ratio as determined by Rutherford backscattering.

International Nuclear Information System (INIS)

A calculation on the stabilization of the sideband instability in the free electron laser (FEL) and inverse FEL (IFEL) was completed. The issue arises in connection with the use of a tapered (''variable-parameter'') undulator of extended length, such as might be used in an ''enhanced efficiency'' traveling-wave FEL or an IFEL accelerator. In addition, the FEL facility at Columbia was configured as a traveling wave amplifier for a 10-kW signal from a 24-GHz magnetron. The space charge field in the bunches of the FEL was measured. Completed work has been published.

International Nuclear Information System (INIS)

Reactive Magnetron Sputtering is a complex process and huge efforts are made addressing the understanding of its fundamental phenomena and the simulation of the deposition process by e.g. Particle in Cell/Monte Carlo (PIC/MC). One of the most uncertain parameters in this reactive sputtering process is the incorporation coefficient of the reactive gas in the growing layer, i.e. the real-time sticking coefficient during deposition. In this work, mass spectrometry is used to deliver more insights on this complex matter. Earlier, a method was developed to determine the incorporation coefficient of the reactive gas molecules in the growing metal film, using mass spectrometry combined with thin film analysis techniques (electron probe microanalysis and x-ray photoelectron spectroscopy). This method delivers a global, realistic incorporation coefficient which can be used in models for the reactive sputtering process. In this work, new insights have been added to the ...

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Modifications to the reference concept were studied and the best approaches defined. The impact of the high efficiency multibandgap solar array on the reference concept design is considered. System trade studies for several solid state concepts, including the sandwich concept and a separate antenna/solar concept, are described. Two solid state concepts were selected and a design definition is presented for each. Magnetrons as an alternative to the reference klystrons for dc/rf conversion are evaluated. System definitions are presented for the preferred klystron and solid state concepts. Supporting systems are analyzed, with major analysis in the microwave, structures, and power distribution areas. Results of studies for thermal control, attitude control, stationkeeping, and details of a multibandgap solar cell study are included. Advanced laser concepts and the meteorological effects of a laser beam power transmission concept are considered.

International Nuclear Information System (INIS)

Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.

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Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.

International Nuclear Information System (INIS)

A one-nanometer scale transmission electron microscope electron probe X-ray microanalysis characterization of as-deposited and annealed aluminum--11.5 at.% zirconium multilayer samples in cross-section synthesized by magnetron sputtering is reported on here. Composition line profiles were acquired across Zr layers in as-deposited material and samples isochronally annealed in a differential scanning calorimeter to temperatures of 290 C and 485 C. A spatial resolution of approximately 1.5 to 2.0 nm was achieved in these experiments and will be improved by deconvolution of the instrumental electron probe function from the data. The as-deposited structure consisted of crystalline Al and Zr layers with thin amorphous layers at the Al/Zr interfaces. The amorphous interface layers increased in thickness upon annealing to 290 C. Additionally, at 290 C a metastable cubic alloy forms at the Zr deposited on Al interface. Upon heating to 485 C a multilayer of Al and metastable ...

International Nuclear Information System (INIS)

Biaxially textured tungsten nanorods (A15 crystal structure) have been grown by oblique angle DC magnetron sputtering using a novel rotation mode called 'two-step rotation'. In this mode, the substrate is given a fast rotation through 1800 at 90 rpm and this is followed by a rest period of 30 s. These nanorods are vertically aligned and have a [100] texture normal to the substrate along with preferential in-plane texture as shown by x-ray pole figure analysis. In contrast, the tungsten nanorods obtained without substrate rotation are slanted at an angle of ?450 and have a [100] texture tilted 160 with respect to the substrate normal. The flux is incident from two diametrically opposite points on the sample at an oblique angle, averaging out the growth into vertical columns that retain the in-plane texture. Scanning electron microscopy shows that the tungsten nanorods have a mixture of {211} and {421} crystal habits; these planes are both minimum surface energy ...

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Duplex-coating procedures consisting of plasma nitriding and Me-C:H hard coating lead to an improved performance of the devices because the Me-C:H coating is supported by the nitrided phase and, therefore, the `eggshell-effect` is avoided. Furthermore, this support leads to a higher load-bearing capacity of the thin film. Two standard procedures (classical high-pressure plasma nitriding and unbalanced magnetron sputtering of Ti-C:H) were performed subsequently to prepare the duplex coatings on X20Cr13 ferritic stainless steel. The corrosion resistance of the steel could be improved by nitriding at 450 C compared to the untreated ferritic substrate. The roughness is determined by the nitriding step. The weakest point of the coating is the transition zone between the nitrided and the untreated substrate and not the interface between the Ti-C:H coating and the nitrided substrate as shown by the Rockwell and scratch tests. The adhesion of the duplex structure (plasma ...

Science.gov (United States)

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the ...

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Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.

International Nuclear Information System (INIS)

In this work, the effects of substrate temperature that was changed from 100 to 500 "oC on the structural, chemical and electrical properties of carbon films, prepared by direct current magnetron sputtering technique, on 316L stainless steel as bipolar plate had been investigated. Raman spectroscopy and scanning electron microscopy (SEM) were performed to study the structure and the morphology of the deposited films, respectively. The corrosion resistance and the electrical resistivity were carried out by using corrosion tests and four point-probe technique. The results show that the carbon films change the structure from amorphous to graphite-like by increasing temperatures. At the temperatures higher than 300 "oC, the holes and porosities are formed on the film indicating a decrease of film quality. According to our results, corrosion resistance and electrical properties are depended strongly on the substrate temperature.

International Nuclear Information System (INIS)

For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force microscopy (AFM) ...

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Deposition of hard coatings may influence the mechanical properties of the bulk material and its corrosion resistance. In this work we study the hardness of the coated and the back side of 100Cr6 steel plates. Electrochemical corrosion tests were performed in O{sub 2}-saturated acetate buffer of pH 5.6 at 25degC. Chromium nitride and titanium nitride coatings prepared by different physical vapour deposition processes, such as arc, thermionic arc evaporation, magnetron sputtering and ion-beam-assisted deposition (IBAD) were compared. The results show that, for sufficient corrosion protection, chromium nitride layers have to be thicker than 500 nm. An increased nitrogen partial pressure in the evaporation chamber of the IBAD process improves the corrosion resistance significantly. The hardness of the substrates was reduced in the case of thermoionic arc evaporation only, indicating a deposition temperature of more than 250degC. For this process, however, we obtained ...

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PVD-coatings based on TiB{sub 2} are expected to show high wear resistance and low tendency of adhesion on metal forming tools. Coating adhesion and morphology can be modified over a wide range by varying the content of nitrogen (N{sub 2}) and the deposition parameters power and bias voltage. All coatings were deposited using commercial unbalanced magnetron equipment, the deposition was homogeneous in a volume of 400 x 400 x 400 mm{sup 3}. Hipped and hot pressed TiB{sub 2}-targets were used, nitrogen (N{sub 2}) was added as gas, Ti and Al by a solid Ti-Al-target. The tribological behaviour was tested by a pin-on-disc wear test. The coatings investigated were TiB{sub 2}, TiAlB(N), TiAl(N) and TiB{sub 2}/TiAl(N). As counterpart in the pin-on-disc wear test, 6 mm diameter spheres of steel (100Cr6), aluminium, brass and bronze were used. The experiments showed a non-uniform wear behaviour. For the combinations TiAlB(N) and TiB{sub 2} versus aluminium, a low wear volume ...

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Nanocrystalline processing by inert gas condensation has the inherent advantages of generating: (1) high surface area nanoclusters, (2) non-stoichiometric oxides, and (3) high dispersions of dopants. This approach is exploited in the synthesis of fluorite-structured catalysts for SO{sub 2} reduction by CO. Nanocrystalline CeO{sub 2{minus}x}, La-doped CeO{sub 2{minus}x}, and Cu-doped CeO{sub 2{minus}x} were produced by magnetron sputtering from a pure or mixed metal target, followed by controlled oxidation of the metallic clusters. The as-prepared doped and undoped nanocrystalline CeO{sub 2{minus}x} materials were found to be excellent catalysts for complete SO{sub 2} conversion to elemental sulfur. Undoped nanocrystalline CeO{sub 2{minus}x} enabled light-off at 460 C, a temperature {approximately} 120 C lower than that over polycrystalline CeO{sub 2}, which is a novel effective catalyst itself. The high catalytic activity of the nanocrystals was associated with ...

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Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with high compressive stress in the order of 4 GPa as well as a low adhesion, which means that the critical ...

International Nuclear Information System (INIS)

Nonevaporable getters (NEGs) have been extensively studied in the last several years for their sorption properties toward many gases. In particular, an innovative alloy as a thin film by magnetron sputtering was developed and characterized at the European Organization for Nuclear Research. It is composed of Ti-Zr-V and protected by an overlayer of palladium (Pd), according to a technology for which the authors got the licence. NEG-Pd thin films used in combination with ion getter pumps is a simple, easy way to handle pumping devices for ultrahigh and extremely high vacuum applications. To show how to apply this coating technology to the internal surface of different types of ion pumps, the authors carried out several tests on pumps of various shapes, sizes (in terms of nominal pumping speed), and types (diode, noble diode, and triode). Special care was taken during the thermal cycle of baking and activation of the pumps to preserve the internal film from sources of ...

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A systematic study of structure-mechanical properties relation is reported for MoSi{sub 2}-SiC nanolayer composites. Alternating layers of MoSi{sub 2} and SiC were synthesized by DC magnetron and rf-diode sputtering, respectively. Cross-sectional transmission electron microscopy was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: Crystallization and phase transformation of MoSi{sub 2}, crystallization of SiC, and spheroidization of the layer structures. Nanoindentation was employed to characterize the mechanical response as a function of structural changes. As-sputtered material exhibits amorphous structures in both types of layers and has a hardness of 11 GPa and a modulus of 217GPa. Subsequent heat treatment induces crystallization of MoSi{sub 2} to form the C40 structure at 500C and SiC to form the a structure at 700C. The crystallization process is directly responsible for hardness and modulus increase ...

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The motivation of this work is to develop high reflectance normal-incidence multilayer mirrors in the 8-12 nm wavelength region for applications in astronomy and extreme ultraviolet lithography. To achieve this goal, Mo/Sr and Mo/Y multilayers were studied. These multilayers were deposited with a UHV magnetron sputtering system and their reflectances were measured with synchrotron radiation. High normal-incidence reflectances of 23% at 8.8 nm, 40.8% at 9.4 nm, and 48.3% at 10.5 nm were achieved. However, the reflectance of Mo/Sr multilayers decreased rapidly after exposure to air. Attempts to use thin layers of carbon to passivate the surface of Mo/Sr multilayers were unsuccessful. Experimental results on the refractive index {tilde n} = 1-{delta} + i{beta} of yttrium and molybdenum in the 50-1300 eV energy region are reported in this work. This is the first time ever that values on the refractive index of yttrium are measured in this energy range. The absorption ...