International Nuclear Information System (INIS)

The authors show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron system differs by a 90 deg C rotation. The origins of in-plane texture in rectangular magnetron ...

International Nuclear Information System (INIS)

Some magnetron sputtering systems experience rapid oscillations in the current and voltage of the plasma discharge after several hours when equipped with certain targets. These oscillations often lead to the plasma becoming extinguished, a condition known as ''flame-out.'' This article details the study of two 90% W--10% Ti magnetron targets which differed in density. The higher density targets sometimes experienced flame-out after approximately 3 h of sputtering. The less dense material could be sputtered for the entire 15 h life of the target. Scanning electron microscopy pictures and atomic composition depth profiles were obtained using Auger electron spectroscopy. In addition, a Colutron-based ion source with a high vacuum system was used to measure ion-induced secondary electron emission coefficients as a function of energy, ...

International Nuclear Information System (INIS)

For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as ...

International Nuclear Information System (INIS)

Nonevaporable getters (NEGs) have been extensively studied in the last several years for their sorption properties toward many gases. In particular, an innovative alloy as a thin film by magnetron sputtering was developed and characterized at the European Organization for Nuclear Research. It is composed of Ti-Zr-V and protected by an overlayer of palladium (Pd), according to a technology for which the authors got the licence. NEG-Pd thin films used in combination with ion getter pumps is a simple, easy way to handle pumping devices for ultrahigh and extremely high vacuum applications. To show how to apply this coating technology to the internal surface of different types of ion pumps, the authors carried out several tests on pumps of various shapes, sizes (in terms of nominal pumping speed), and types (diode, noble diode, and triode). Special care was taken during the thermal cycle of baking and ...

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The properties of polycrystalline (Ti, Al)N coatings deposited on non-nitrided, classically plasma-nitrided and low pressure plasma-nitrided AISI H11 steel samples were investigated. The plasma deposition and low pressure plasma nitriding were performed in a Z700-LH magnetron sputter ion plating unit, while a separate unit was used for plasma nitriding of specimens at a pressure of several millibars. The (Ti, Al)N coating was deposited onto all the samples using the same equipment as for the plasma deposition and low pressure plasma nitriding. For the characterization of the composite structures, the following methods were used: scratch test, X-ray diffraction analysis, scanning electron microscopy, scanning tunnelling microscopy and microhardness testing. It was found that plasma nitriding prior to coating deposition strongly affects the growth and properties of hard coatings, such as the microhardness, adhesion, preferred ...

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The main physical processes allowing negative ion production by surface sputtering for further acceleration in tandem acceleration are briefly reviewed. The sputtering yield and the probability of negative ion ejection are discussed. The properties of negative ion beams for an efficient acceleration in tandem accelerators are also discussed, with an emphasis on space charge problems. The main features and performances of the heavy negative ion injector of the Bucharest tandem accelerator are given.

British Library Electronic Table of Contents (United Kingdom)

Amino-rich polymeric coatings are widely used in biomedical applications, since they promote adsorption of diverse biomolecules or facilitate cell growth. As a consequence, there is a growing interest in fabrication of such coatings that is focused predominantly on the optimization of the deposition process in terms of high density of primary amino groups. In addition, the nature of biomedical applications requires also sufficient stability of the films in aqueous environments. This aspect is investigated in this contribution. In particular, the effect of water and phosphate buffer saline on the coatings prepared by RF magnetron sputtering of Nylon 6,6 in Ar/N2 and N2/H2 gas mixtures is evaluated. The samples exposed to liquids are characterized by various diagnostic methods and their prop...

Energy Technology Data Exchange (ETDEWEB)

The electrode structure of an inverted cesium sputtering negative ion source has been modified to produce a convergent Cs/sup +/ beam. The intensities of negative ion beams produced with this electrode structure are approximately an order of magnitude greater than previously obtained.

International Nuclear Information System (INIS)

Reactive Magnetron Sputtering is a complex process and huge efforts are made addressing the understanding of its fundamental phenomena and the simulation of the deposition process by e.g. Particle in Cell/Monte Carlo (PIC/MC). One of the most uncertain parameters in this reactive sputtering process is the incorporation coefficient of the reactive gas in the growing layer, i.e. the real-time sticking coefficient during deposition. In this work, mass spectrometry is used to deliver more insights on this complex matter. Earlier, a method was developed to determine the incorporation coefficient of the reactive gas molecules in the growing metal film, using mass spectrometry combined with thin film analysis techniques (electron probe microanalysis and x-ray photoelectron spectroscopy). This method delivers a global, realistic incorporation coefficient which can be used in models for the reactive sputtering ...

Energy Technology Data Exchange (ETDEWEB)

The results of an investigation on the production of Group IIA atomic and molecular negative ion beams formed in a cesium-sputter negative ion source are presented. The sputtering material was formed by pressing pellets of stoichiometric mixtures of the Group IIA element carbonates and 10% copper powder. Negative ions of several alkaline-earth elements and their oxides have been observed. Beam intensities as high as 180 pA have been observed for Sr{sup -}and 20 nA for SrO{sup -}. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Average emittance data for ion beams extracted from cesium-sputter negative ion sources equipped with spherical, ellipsoidal, and cylindrical geometry cesium-surface ionizers are presented. The attributes of the respective source geometries are described in terms of their cesium ion optical properties. The results of recent measurement of the emittances of momentum-analyzed beams extracted from the ellipsoidal geometry source are also presented. These measurements indicate the presence of a species-dependent effect. The effect is believed to be attributable to differences in the energy spreads of the respective negative ion beams introduced by the sputter generation process.

Energy Technology Data Exchange (ETDEWEB)

Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with high compressive stress in the order of 4 GPa as well as a low ...

International Nuclear Information System (INIS)

Modeling is performed for focused-ion-beam (FIB) sputtering and redeposition on trench sidewalls in a steady state approximation. Calculations are carried out to demonstrate the sputtered surface profile under known parameters such as sputtering yield as a function of ion incident angle, the FIB current density profile, and the FIB scan speed. It is found that a steplike slope with a gradient angle of #theta#_0 is formed at the FIB bombarding position. Furthermore, the redeposition flux on the sidewalls is calculated as a function of #theta#_0 for the FIB trench milling assuming the cosine law for the angular distribution of the sputtered atom. The redeposition will be more accurately predictable and controllable when more information about these assumptions is obtained.

International Nuclear Information System (INIS)

We show that the morphology and the luminescence properties of ZnO layers produced by magnetron sputtering can be controlled by technological parameters of sputtering, particularly by the ratio of argon to oxygen gases in the gas flow during the growth process. Smooth and flat layers were produced with a high Ar/O ratio, while porous layers with various morphologies were obtained with a low Ar/O ratio. The layers produced with O/Ar ration equal to 10 exhibit extremely high near-bandgap luminescence intensity even higher in comparison with bulk ZnO single crystals. The free carrier density estimated from the analysis of photoluminescence spectra is also very high in these samples suggesting that these technological conditions promote both optical and electrical activation of the doping Al impurity. The samples grown with high Ar/O ratios exhibit strong visible emission which is controlled by the technological conditions.

British Library Electronic Table of Contents (United Kingdom)

Nanocrystalline chromium oxynitride films were deposited by reactive RF magnetron sputtering of metallic chromium target in argon and helium atmospheres. The paper deals with consequence of increase in oxygen partial pressure on structural, hydrophobic and optical properties of chromium oxynitride films. The film stoichiometry changes from CrN and Cr2O3 to only Cr2O3 with increase in oxygen partial pressure as evident from X-Ray Diffraction analysis in both cases. The average crystallite size decreases with increase in oxygen partial pressure for both gas atmospheres. The thickness calculated from transmission data and surface profilometer are in good harmony with each other. The deposited films are hydrophobic by nature and the contact angle of the films varies as a function of surface ro...

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The half-metallic Heusler alloy Ni{sub 2}MnIn is of high interest for use in spin electronics since at the Ni{sub 2}MnIn/InAs interface a spin polarization of 100% is predicted. We prepare high-quality thin films of 20-60nm thickness by co-evaporation and DC magnetron sputtering. Point-contact Andreev reflection spectroscopy yields a spin polarization of up to 54%. By spectral generalized magneto-optical ellipsometry, the dielectric and magneto-optical properties are determined and ferromagnetic behavior below the Curie temperature T{sub C}=318K is proved.

Energy Technology Data Exchange (ETDEWEB)

We report experimental evidence of a previously unseen species-dependent effect in the transverse emittances of momentum-analyzed {sup 28}Si{sup {minus}}, {sup 58}Ni{sup {minus}}, and {sup 197}Au{sup {minus}} negative-ion beams generated by cesium-ion sputtering. The differences in the emittances are found to be principally correlated with differences in the energy spreads in the respective ion beams, which have their origins in the sputter-ejection negative-ion formation process. The experimental equipment and techniques utilized for emittance data acquisition and analysis, and evidence for a species-dependent effect in the emittances and brightnesses of the subject ion beams, are presented in this paper.

International Nuclear Information System (INIS)

The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps.

Energy Technology Data Exchange (ETDEWEB)

Two sources of negative ions are described. An rf source produces up to 14 ..mu..A beams of He/sup -/ by charge exchange in Rb vapor. The other Source of Negative Ions by Cesium Sputtering (SNICS) produces a wide variety of negative ion beams in the ..mu..A range. Two important features of SNICS are its simple, compact construction and its very good beam emittance (2 to 4..pi..mm mrad MeV/sup 1/2/). Both sources have lifetimes >200 hours and they are used extensively on the Wisconsin EN tandem.

International Nuclear Information System (INIS)

Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.

CERN Document Server

In order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless-steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger electron spectroscopy during specific in situ thermal cycles. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy and the morphology (crystal structure and size of the crystallites) has been investigated by X-ray diffraction. The criteria indicating the sample quality and its dependence on film structure and chemical composition are presented and discussed. (13 refs).

Energy Technology Data Exchange (ETDEWEB)

There is presently considerable interest in wear resistant coatings produced using closed field unbalanced magnetron sputtering technology. For example, layered films of diamond-like carbon (DLC) with tungsten or titanium additions have been widely reported. The benefit is that the mechanical properties are enhanced (e.g. giving greater toughness); also it is possible to control the stress state and enhance adhesion. Here we report the further development of this concept by the addition of TiN, TiCN and TiC layers in DLC-based composites, utilizing an additional source of electrons in the vicinity of substrate to enhance ionisation of the plasma and increase coating density. Composite coatings of ceramics TiN, TiC{sub x}N{sub y}, TiC, CrN, TiCrN, TiCrCN, TiCrC, metal doped Ti{sub x%}-DLC and their combinations were deposited on 316 stainless steel substrates. The mass flow of reactive gases into the chamber was controlled using plasma optical ...

International Nuclear Information System (INIS)

Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement ...

International Nuclear Information System (INIS)

Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. ...

Energy Technology Data Exchange (ETDEWEB)

A focused ion beam (FIB) is used to accurately sculpt predetermined micron-scale, curved shapes in a number of solids. Using a digitally scanned ion beam system, various features are sputtered including hemispheres and sine waves having dimensions from 1-50 {micro}m. Ion sculpting is accomplished by changing pixel dwell time within individual boustrophedonic scans. The pixel dwell times used to sculpt a given shape are determined prior to milling and account for the material-specific, angle-dependent sputter yield, Y({theta}), as well as the amount of beam overlap in adjacent pixels. A number of target materials, including C, Au and Si, are accurately sculpted using this method. For several target materials, the curved feature shape closely matches the intended shape with milled feature depths within 5% of intended values.

Energy Technology Data Exchange (ETDEWEB)

Dominating factors in plasma nitriding and plasma condition that makes nitriding possible in plasma nitriding process of metals having hard oxide film were studied. In case of stainless steel, oxide film sputtering was easier comparing to nitriding layer. Three phenomena such as sputtering of oxide layer, formation of nitriding layer and sputtering of nitriding layer occurred simultaneously. Nitriding was achieved when the formation of nitriding layer reached the peak comparing to the removal of nitriding layer after the removal of oxide layer. Situations of metallic surface of stainless steel in surface nitriding were divided into four categories and they were, situation where oxide layer remained as it is, situation where nitriding layer was formed although oxide layer remained in some part, situation where only nitriding layer was formed and situation where sputtering was carried out. It was revealed ...

Energy Technology Data Exchange (ETDEWEB)

Chemical characterization of passive films formed on AISI 304 austenitic stainless steel, in a borate/boric acid solution at pH 9.2, under various conditions of potential, temperature, and polarizations time, was made by Auger electron spectroscopy combined with ion sputtering, and x-ray photoelectron spectroscopy (XPS). The depth chemical composition, thickness, and duplex character of the passive layers were determined after processing AES sputter profiles by their quantitative approach based on the sequential layer sputtering model. Moreover, separated contributions of elements in their oxidized and unoxidized state could be disclosed from part to part of the oxide-alloy interface. The XPS study specified the chemical bondings which take placed inside the film, between Fe and oxygen (and water).

International Nuclear Information System (INIS)

Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.

Energy Technology Data Exchange (ETDEWEB)

A technique has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb and Cs). The method is based on the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag or other metal powders. The following intensities are typical of those observed from carbonate samples subjected to approx. = 3 keV cesium ion bombardment: Li/sup -/: greater than or equal to 0.5 ..mu..A; Na/sup -/: greater than or equal to 0.5 ..mu..A; K/sup -/: greater than or equal to 0.5 ..mu..A; Rb/sup -/: greater than or equal to 0.5 ..mu..A; Cs/sup -/: greater than or equal to 0.2 ..mu..A.

Energy Technology Data Exchange (ETDEWEB)

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

International Nuclear Information System (INIS)

Contrary to the electronic excitation induced phenomena of desorption and sputtering, we observed incorporation of oxygen in a thin Fe film during its irradiation with swift heavy ions. It is observed that the adsorbed oxygen diffuses in to the Fe film. The incorporation of oxygen and its diffusion in the bulk of the film is a manifestation of extremely large electronic energy deposition by the incident ions. It is shown that the experimentally observed high diffusivity of oxygen in Fe during irradiation is due to the existence of transient melt phase of Fe.

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

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Duplex-coating procedures consisting of plasma nitriding and Me-C:H hard coating lead to an improved performance of the devices because the Me-C:H coating is supported by the nitrided phase and, therefore, the `eggshell-effect` is avoided. Furthermore, this support leads to a higher load-bearing capacity of the thin film. Two standard procedures (classical high-pressure plasma nitriding and unbalanced magnetron sputtering of Ti-C:H) were performed subsequently to prepare the duplex coatings on X20Cr13 ferritic stainless steel. The corrosion resistance of the steel could be improved by nitriding at 450 C compared to the untreated ferritic substrate. The roughness is determined by the nitriding step. The weakest point of the coating is the transition zone between the nitrided and the untreated substrate and not the interface between the Ti-C:H coating and the nitrided substrate as shown by the Rockwell and scratch tests. The adhesion of the ...

Science.gov (United States)

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found ...

British Library Electronic Table of Contents (United Kingdom)

The properties of ZnO films were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnO films decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnO films increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300degreeC were 2186cm and 798cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnO films annealed in vacuum and H2/Ar ambients at 600degreeC were similar with 0.040cm and 0.035cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnO films annealed in ambient H2/Ar at low temperatures. The average optical transmission was >82%...

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Chromium containing amorphous hydrogenated carbon films (a-C : H/Cr) have been prepared by simultaneous rf plasma activated chemical vapour deposition of methane and magnetron sputtering of a chromium target. During deposition the substrates were heated (up to 300C) and DC biased (-200 and -600 V) in order to obtain films with high chemical stability. Constant temperature tests were performed at 250C in air with coatings deposited on silicon substrates. The degradation of the coatings was monitored by Raman spectroscopy and reflectance and transmission measurements. The main degradation mechanisms are discussed and the relevant parameters which improve the durability of the coatings are presented. Furthermore, the durability of solar selective, multilayered coatings which were deposited on copper sheets was investigated. Based on accelerated aging tests at different temperature loads in air (at 220C, 250C and 300C) and in a humid environment ...

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The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the ...

International Nuclear Information System (INIS)

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

An RF plasma sputter type heavy negative ion source, which can deliver mA-class negative ion beams (12.1 mA, 1.6 mA and 2.3 mA for Cu{sup -}, C{sup -} and C{sub 2}{sup -} currents, respectively) in dc-mode operation, has been developed. In ion source, a dense plasma of 10{sup 11} cm{sup -3} order was generated in the xenon gas pressure of 10{sup -3}-10{sup -2} Pa with an rf (13.56 MHz) power of 200 - 300 W by using an RF coil, and a relatively large sputtering target of 42 mm in diameter was used. As for intense negative ion beams of silicon or boron which are important dopants for semiconductor fabrication, negative ion extraction properties of the negative ion source was investigated. The extracted total negative ion currents of 4.4 mA for a silicon target and 2.8 mA for a LaB{sub 6} target were ...

International Nuclear Information System (INIS)

Fe_5_0Pt_5_0 nanodots dispersed in a SiO_2 film (Fe_5_0Pt_5_0 nanodot film) were formed by a self-assembled nanodot deposition (SAND) method in which Fe_5_0Pt_5_0 and SiO_2 are cosputtered in a high vacuum rf magnetron sputtering equipment. Fe_5_0Pt_5_0 pellets are laid on a SiO_2 target in a sputtering chamber to form the Fe_5_0Pt_5_0 nanodot film in the SAND method. The size and density of Fe_5_0Pt_5_0 nanodot were controlled by changing the ratio of the total area of Fe_5_0Pt_5_0 pellets to that of SiO_2 target. The Fe_5_0Pt_5_0 nanodot size decreases and its density increases when the ratio decreases. As-deposited Fe_5_0Pt_5_0 nanodots self-assembled to a face-centered-cubic phase of single-crystal structure. The Fe_5_0Pt_5_0 nanodot films were annealed to evaluate the nanodot size controllability, the magnetic anisotropy, and the thermal stability. Fully ordered L1_0 face-centered-tetragonal Fe_5_0Pt_5_0 nanodots with ...

Energy Technology Data Exchange (ETDEWEB)

A multicusp magnetic field plasma surface ion source, normally used for H/sup /minus//ion beam formation, has been modified for the generation of high-intensity, pulsed, heavy negative ion beams suitable for a variety of uses. To date, the source has been utilized to produce mA intensity pulsed beams of more than 24 species. A brief description of the source, and basic pulsed-mode operational data, (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure), are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low discharge power conditions suggest that sources of this type may also be used to produce high-intensity (mA) dc beams. The results ...

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Shell Solar GmbH is working on a variant of the so-called stacked elemental layer process for CIGSSe absorber production. The metal films resp. the selenium are deposited on the Mb electrode at room temperature by DC sputtering (CIG) or evaporation (Se) and then processed into semiconductors by rapid thermal annealing (RTP). Currently, the mean efficiency of the pilot plant is i 12.6 {+-} 0.2 % for non-sealed 30 x 30 cm{sup 2} modules, the key efficiency is 13.0 %. In addition to the 30 x 30 cm{sup 2} pilot line, a small series of 60x90cm2 modules was constructed in December 2004. Here, the mean efficiency was 13.0 percent while the average module power was higher than 60 W. The contribution also describes investigations of ceramically sputtered n-ZnO:Al layers with reduced Al concedntrations of 1 percent and on reactively sputtered n-ZnO.Al layers from the double roller magnetron. (orig.) [German] Bei ...

Science.gov (United States)

Partial Contents: Ternary Compounds; Granular Superconductors; Superconductivity in (SN)x and its Halogen Derivative (SNBr0.4)x; Studies of cuCl at Elevated Pressures; Superconducting Properties of Hydride Systems; Thin Film Superconducting Materials Research; Synthesis of Superconducting Nb3Si using High Pressures; Synthesis of Unstable A-15 Compounds by Epitaxial Recrystallization of Ion Implanted Layers; and Sputtering of Nb3Si.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

Energy Technology Data Exchange (ETDEWEB)

Creation of new multi-composite materials is an essential issue to attain an innovative improvement of the current nuclear technology. In this paper, some highlights are focused on the research of creation of those materials and the relating subjects in NIRIM. (1) The KOH corrosion test method are expected to be efficiently available in the limited cases instead of Na corrosion test one. (2) The preliminary creation of the multi-composite ceramics were achieved by Y- ion implantation into sapphire and the RF sputtering, of which the specified orientation was realized by the existence of the buffer layer. The importance of the defect control are described with the relation to the corrosion resistance improvement. (3) The ion beam induced phenomena have been investigated on the surface change of silica glass and the crystallization of Cu film on SrTiO{sub 3}. (4) The electronic states of the alkali-metal adsorbed surfaces and ...

International Nuclear Information System (INIS)

We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ion energy of 3 ...

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New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type ...

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A method has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb, and Cs). The method consists of the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag, or other metal powder. The following intensities are typical of those observed from carbonate samples subjected to /approximately/3 KeV cesium ion bombardment: Li/sup -/: greater than or equal to0.5 ..mu..A; Na/sup -/: greater than or equal to0.5 ..mu..A; K/sup -/: greater than or equal to0.5 ..mu..A; Rb/sup -/: greater than or equal to0.5 ..mu..A; Cs/sup -/: greater than or equal to0.2 ..mu..A. 7 refs., 2 figs., 1 tab.

International Nuclear Information System (INIS)

Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si"+ "+ FIB also indicated the ...

International Nuclear Information System (INIS)

The introduction of oxygen in the vicinity of a metallic target surface, bombarded with positive argon ions of twenty kiloelectron-volts, increases the number of sputtered atoms in the excited state. This phenomenon of exaltation, very sensitive in the case of nickel and aluminium, is much less marked in the case of molybdenum. Moreover, the emission of excited particles coming from the beam's ions is not modified. A quantum-mechanical model of a kinetic emission process, which permits the interpretation of the clean metallic target's emission phenomena, seems insufficient to explain all of the results obtained in the presence of oxygen. In this last case one can therfore use a thermodynamic model in which excited metallic particles can be formed directly by chemical surface reactions of neutralization or reduction. (orig.).

Science.gov (United States)

A focused ion beam (FIB) technique was applied to cross-sectional specimen preparation to observe an interface between a plasma sprayed coating and an aluminum (Al) substrate by transmission electron microscopy (TEM). The surface of the sprayed coating film has a roughness of several tens of microns. Sputter rates for the coating film and the substrate are greatly different. The rough surface and the difference in sputter rate cause problems in making TEM specimens with smooth side walls. The top surface of the coating film was planerized by the FIB before fabricating the TEM specimen. The interfaces were investigated by TEM and energy-dispersive X-ray (EDX) analysis. The TEM observation revealed that there is a 10 nm thick amorphous layer at the interface between the coating film and substrate. The coating film consists of two kinds of sublayers with bright and dark contrast. The bright contrast sublayers were amorphous ...

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Nanocrystalline processing by inert gas condensation has the inherent advantages of generating: (1) high surface area nanoclusters, (2) non-stoichiometric oxides, and (3) high dispersions of dopants. This approach is exploited in the synthesis of fluorite-structured catalysts for SO{sub 2} reduction by CO. Nanocrystalline CeO{sub 2{minus}x}, La-doped CeO{sub 2{minus}x}, and Cu-doped CeO{sub 2{minus}x} were produced by magnetron sputtering from a pure or mixed metal target, followed by controlled oxidation of the metallic clusters. The as-prepared doped and undoped nanocrystalline CeO{sub 2{minus}x} materials were found to be excellent catalysts for complete SO{sub 2} conversion to elemental sulfur. Undoped nanocrystalline CeO{sub 2{minus}x} enabled light-off at 460 C, a temperature {approximately} 120 C lower than that over polycrystalline CeO{sub 2}, which is a novel effective catalyst itself. The high catalytic activity of the nanocrystals ...

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The aim of this work was to develop a method to distinguish between different ion formation processes and to determine the influence of these processes on the total number of detected monatomic ions of a certain element. A vector/matrix-formalism was developed, which describes the physical processes of sputtering, ion formation, mass separation and detection in laser-SNMS. In the framework of the method developed, based on this theoretic formalism, changes in the secondary flux contribution of the respective element were observed by comparing the detected monatomic ion yield obtained in specifically aligned (SIMS and) laser-SNMS experiments. The yields resulting from these experiments were used to calculate characteristic numbers to compare the flux composition from different surfaces. The potential of the method was demonstrated for the elements boron, iron and gadolinium by ...

International Nuclear Information System (INIS)

In analysis of hydrogen in metals and alloys by SIMS, control of the hydrogen blank mainly due to residual gases is a persistent problem. Contrarity, this problem becomes less important in case of deuterium analysis. The prescribed amounts of deuterium were introduced into a pure titanium and a beta-titanium alloy (Ti- 6.6wt%Fe) by the gas reaction method. Intensities of the various secondary ions sputtered from each sample were measured by the Hitachi Ion Microanalyzer with primary ions of Ar"+. Energy distributions of the various secondary ion species were measured with the energy window of about 15eV width. The effects of oxygen gas pressure in the target chamber and the bulk deuterium concentration on the shape of energy distribution curves are discussed. For all samples, intensity of D"- ions is higher than that of D"+ ions, especially ...

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A brief description of a method for producing relatively intense molecular negative ion beams for the difficult Group IIA elements is given which offers considerable improvement in terms of source operation and beam intensity stability over other methods conventionally utilized. It is particularly suited for use in cesium plasma sources such as the Aarhus geometry and axial geometry versions of the source. The method utilizes H/sub 2/ source feed gas for the production of a hydrogen-rich plasma discharge which sputters a negatively biased probe made of elemental or copper alloy material. Negative ion beams of MgH/sub 3//sup -/>=12 ..mu.. A have been realized during routine operation of the 25 MV tandem accelerator. Negative ion beam intensity data, typical source operational parameters, and examples of mass spectra associated with their production are given. Interesting intermetallic molecular ...

International Nuclear Information System (INIS)

Electron probe microanalysis (EPMA) offers high sensitivity and high accuracy in quantitative measurements of chemical compositions and mass coverages. Owing to the low detection limits of the wavelength-dispersive technique, monolayers with mass coverages of about 0.05 pg cm z can be detected. Assuming a density of 5 g cm--3 this corresponds to a thickness of 0.1 nm. With these advantages in mind, EPMA was extended to depth profile analysis in the sub-micron range using a surface removal technique. The present paper shows how depth profile analysis can be improved by combining EPMA and the focused ion beam (FIB) technique. The focused ion beam system uses a Ga+ ion beam. The ion beam allows the milling of defined geometries on the nanometer scale, so that very shallow bevels with exactly defined angles in relation to the surface can be obtained. Low surface damage is expected due to low ...

International Nuclear Information System (INIS)

Focussed ion beam (FIB) processing has been applied to the fabrication of novel InP-based cleaved coupled cavity (CCC) quantum cascade lasers (QCL). Gas assisted etching using XeF_2 has been shown to significantly reduce the redeposition of sputtered material onto the mirror surfaces during final milling. For the unprocessed laser a broad spread of lasing peaks are observed between 9.72#mu#m to 9.78#mu#m at a current of 380mA (1kA/cm"-"2). After FIB processing, substantial side mode suppression is observed on applying a current of 20mA (100A/cm"-"2) to the short section and the main lasing peak is observed at 9.77#mu#m.

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In order to enhance the resistance to the pitting corrosion due to asepsis processes and to avoid structural fractures in dentistry drills, a plasma immersion ion implantation (PIII) treatment using nitrogen has been performed. The selected drill samples, made of AISI 434 based stainless steel with a 0.670 mm diameter, were treated at a -1kV bias between 350 C and 450 C, this temperature being controlled by both a 20-50 {mu}s pulse width and a 200-1000 Hz repetition rate in the bias. The drills were analysed by cyclic potentiodynamic tests showing a good pitting corrosion resistance when treated at around 400 C, as follows from a resulting very low hysteresis loop. Yet, the resistance appears somehow diminished by the presence of sputtering when processed at temperatures near 450 C. It is also found that the PIII nitriding effectiveness appears to be limited by the appearance of uniform corrosion. Finally, X-ray diffraction of the samples has ...

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Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

Science.gov (United States)

High quality La/sub 1.8/Sr/sub 0.2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 ..mu..m thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF/sub 2/, Si, CaF/sub 2/, ZrO/sub 2/-9% Y/sub 2/O/sub 3/, BaF/sub 2/, Al/sub 2/O/sub 3/, and SrTiO/sub 3/. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa/sub 2/Cu/sub 2/O/sub 7/ structure, in the case of SrTiO/sub 3/ ...

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The motivation of this work is to develop high reflectance normal-incidence multilayer mirrors in the 8-12 nm wavelength region for applications in astronomy and extreme ultraviolet lithography. To achieve this goal, Mo/Sr and Mo/Y multilayers were studied. These multilayers were deposited with a UHV magnetron sputtering system and their reflectances were measured with synchrotron radiation. High normal-incidence reflectances of 23% at 8.8 nm, 40.8% at 9.4 nm, and 48.3% at 10.5 nm were achieved. However, the reflectance of Mo/Sr multilayers decreased rapidly after exposure to air. Attempts to use thin layers of carbon to passivate the surface of Mo/Sr multilayers were unsuccessful. Experimental results on the refractive index {tilde n} = 1-{delta} + i{beta} of yttrium and molybdenum in the 50-1300 eV energy region are reported in this work. This is the first time ever that values on the refractive index of yttrium are measured in this energy ...

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The enhancement of positive secondary ion yields of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In/sup +/ were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5x10/sup 15/ to 4x10/sup 16/ O-atoms/cm/sup 2/. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si/sup +/ intensity is proportional to c(O)sup(x) (with x=1.4) in the concentration regime, 1.5<=c(O)<=30 at%. The O/sup +/ intensity shows a similar dependence for c(O)> or approx.20 at.%.

Energy Technology Data Exchange (ETDEWEB)

Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-{Tc} superconducting lines as narrow as 0.8 {mu}m have been fabricated from epitaxial YBa{sub 2}Cu{sub 3}O{sub 7 {minus} {ital y}} films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 {mu}m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 {times} 10{sup 4} A/cm{sup 2} at 77.3 K. Maskless etching was carried out using 130-keV au{sup +} focused ion-beam (FIB) with a 0.1-{mu}m-diameter beam. A 50-nm-thick film was patterned into 0.3-{mu}m-wide lines at a dose of 5 {times} {sup 16} ions/cm{sup 2}. In comparison with Ar IBE, Cl{sub 2} reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. ...

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The bibliography contains citations concerning the properties of tantalum and tantalum compound films formed by sputtering techniques. Topics include processes, and electrical, magnetic, and dielectric properties of the sputtered films. Tantalum compounds studied include nitrates, oxides, and aluminides. The structural properties of sputtered films are also discussed. (Contains a minimum of 105 citations and includes a subject term index and title list.)

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Computation of effective flow properties of fluids in porous media based on three dimensional (3D) pore structure information has become more successful in the last few years, due to both improvements in the input data and the network models. Computed X-ray microtomography has been successful in 3D pore imaging at micron scale, which is adequate for many sandstones. For other rocks of economic interest, such as chalk and diatomite, submicron resolution is needed in order to resolve the 3D-pore structure. To achieve submicron resolution, a new method of sample serial sectioning and imaging using Focused Ion Beam (FIB) technology has been developed and 3D pore images of the pore system for diatomite and chalk have been obtained. FIB was used in the milling of layers as wide as 50 micrometers and as thin as 100 nanometers by sputtering of atoms from the sample surface. The focused ion beam, consisting of gallium ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail ...

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This study attempts to elucidate some of the effects of adding argon, neon and hydrogen to low pressure thermionically supported discharges used for plasma nitriding AISI M2 steel substrates. Four runs were performed at the same substrate temperature (550 C) and bias voltage (500 V), using the following gas mixtures: 8% N{sub 2} in Ar, 8% N{sub 2} in Ne, N{sub 2}+H{sub 2} in equal proportions, and N{sub 2} only. By careful control of the discharge parameters, most of the bombardment energy was transported to the substrates by 500 eV ions in all cases; these were mainly Ar{sup +} ions in the N{sub 2}+Ar run and N{sub 2}{sup +} ions in the other runs, notably by the action of Penning ionization in the N{sub 2}+Ne run. We found that the surface hardness was not significantly influenced by the type of ion delivering the bombardment energy, although we suggest that ions would need ...

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface ...

International Nuclear Information System (INIS)

This paper reports the results of a fine-probe EDS microanalytical study of cellular precipitation in a Cu-Ti binary alloy. Compositional profiles across the solute depleted Cu-rich FCC lamellae and the Cu_4Ti lamellae within isothermally formed cellular colonies were measured in a FEG-TEM from thin-foil specimens prepared by conventional electropolishing and by a technique using a Ga"+ focused ion-beam (FIB). The Cliff-Lorimer ratio method, with an absorption correction, was employed to quantify the compositions. Two FIB samples were prepared with different orientations of the lamellae with respect to the ion-milling direction. The compositional profiles across the Cu-rich FCC lamellae and the Cu_4Ti compound lamellae in both the FIB-prepared samples and the electropolished sample were, within experimental error, numerically equivalent. The composition of the Cu_4Ti compound phase lamellae was very close to the ideal stoichiometric composition ...

Energy Technology Data Exchange (ETDEWEB)

The preparation by sputtering of artificial metallic superlattices is described, as are the results of x-ray structural determinations. Tunneling and resistivity measurements on these materials are reported.

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Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no noticeable depletion zone and a more gradual fall-off compared to the profiles from ...

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The bibliography contains citations concerning the structural properties of sputtered tantalum and tantalum compounds. The preparation of thin film capacitors and resistors is described. The electrical properties of the sputtered films are also included. The influence of the substrate on the properties of the coatings is considered, including adherence of the coating to the substrate, and the effects of impurities on coating integrity. (Contains 250 citations and includes a subject term index and title list.)

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Tantalum and tantalum-based thin films have gained precedence as the diffusion barrier for copper interconnects used in the latest generation of integrated circuits (ICs). The paper presents insight and observations on the covariance of texture and grain size of wrought tantalum sputtering targets and their influence on sputtering performance. Previous studies involving deposition trials of tantalum targets of varying metallurgical character had demonstrated that both grain size and textural homogeneity is critical for assuring reliable sputtering performance of tantalum. Subsequently, a model had been proposed to prescribe how localized texture bands and orientation clusters in tantalum are effectively resistant to sputter erosion. In this paper, results of atomic force microscopy (AFM) and orientation imaging microscopy (OIM{sup TM}) analyses on the eroded surface of a tantalum ...

International Nuclear Information System (INIS)

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H_2SO_4). Alloys with two nitrogen doses have been prepared (2.5x10"1"6 and 2x10"1"7 N atoms/cm"2). The implanted alloys have been characterized by "1"5N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical behaviour of the alloy. The anodic dissolution ...

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Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

Energy Technology Data Exchange (ETDEWEB)

Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

Science.gov (United States)

Sputtering of glass coatings on cadmium sulfide thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ultra High Vacuum (UHV) test setup for electron gun testing has been developed. The development of next generation light sources and accelerators require development of klystron as a radio frequency power source, and in turn electron gun. This UHV electron gun test setup can be used to test the electron guns ranging from high average current, quasi-continuous wave to high peak current, single pulse etc. An electron gun has been designed, fabricated, assembled and tested for insulation up to 80 kV under the programme to develop high power klystron for future accelerators. Further testing includes the electron emission parameters characterization of the cathode, as it determines the development of a reliable and efficient electron gun with high electron emission current and high life time as well. This needs a clean ultra high vacuum to study these parameters particularly at high emission current. The cathode emission current, work function and vapour pressure of cathode surface material ...

International Nuclear Information System (INIS)

Growth of Ru- and RuO_2-composite (ROC) nanodots on atomic-layer-deposited Al_2O_3 film has been studied for the first time using ion-beam sputtering followed by post-deposition annealing (PDA). X-ray photoelectron spectroscopy analyses reveal that RuO_2 and Ru co-exist before annealing, and around 10% RuO_2 is reduced to metallic Ru after PDA at 900 deg. C for 15 s. Scanning electron microscopy measurements show that well-defined spherical ROC nanodots are not formed till the PDA temperature is raised to 900 deg. C. The mean diameter of the nanodots enlarges with increasing PDA temperature whereas the nanodot density decreases, which is attributed to coalescence process between adjacent nanodots. It is further illustrated that the resulting nanodot size and density are weakly dependent on the annealing time, but are markedly influenced by the decomposition of RuO_2. In this article, the ROC nanodots with a high density of 1.6 x 10"1"1 cm"-"2, ...

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

International Nuclear Information System (INIS)

In this work, amorphous hydrocarbon (a-C:H) film deposition on metallic mirrors was studied during working shots in tokamak T-10 and at exposure in Ar/CHD3/D2 dc magnetron discharge in a special laboratory high vacuum setup. Analysis of film composition (including hydrogen content) was carried out using nuclear physical methods. Thickness and optical parameters (refractive and extinction coefficients) of the films were estimated by ellipsometry. Laboratory films can be characterized as soft a-C:H films in comparison with hard tokamak films (? = 1.2 and 1.8 g/cm3, respectively). For the first one, a linear dependence of deposition rate on mirror temperature was observed in a wide temperature range. The addition of methane into initial Ar/D2 magnetron gas mixture leads to an increase of deposition rate. The data obtained should be taken into account to prevent hydrocarbon film formation on the surface of first mirrors in ITER.

International Nuclear Information System (INIS)

The KAERI compact far-infrared (FIR) free-electron laser (FEL) has been operated successfully in the wavelength range of 97-150 #mu#m. It is the first demonstration of FEL lasing by using a magnetron-based classical microtron. We developed a high precision undulator consisting of 80 periods, with each period being 25 mm. The field strength of the undulator can be changed from 4.5 to 6.8 kG with an amplitude deviation of only 0.05% in r.m.s value. The kinetic energy of the electron beam is 6.5 MeV. The average current and pulse duration of the electron beam macropulses are 45 mA and 5.5 #mu#s, respectively. The measured power of the FEL with the electron beam parameters was more than 50 W for a FIR macropulse having a duration of 4 #mu#s. The spectral width of the FEL was measured to be 0.5% of the central wavelength. The FEL system, aside from the racks for the controlling units, is compact enough to be located inside an area of 3x4 m"2.

International Nuclear Information System (INIS)

The variation in the superconducting properties of various binary alloys of transition metal-germanium systems was surveyed by studying sputter deposited samples prepared under various conditions. The primary interest has been to study the formation of the stoichiometric A-15 compounds T_3Ge.

Energy Technology Data Exchange (ETDEWEB)

Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby silicide growth occurs in ...

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Methods and apparatus are described for efficient photodetachment and purification of negative ion beams. A method of purifying an ion beam includes: inputting the ion beam into a gas-filled multipole ion guide, the ion beam including a plurality of ions; increasing a laser-ion interaction time by collisional cooling the plurality of ions using the gas-filled multipole ion guide, the plurality of ions including at least one contaminant; and suppressing the at least one contaminant by selectively removing the at least one contaminant from the ion beam by electron photodetaching at least a portion of the at least one contaminant using a laser beam.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

In 1999, the plasma parameters of reversed shear (RS) plasmas had been extended in 1) DT-equivalent fusion power gain Q_D_T"e"q - 0.5 (n_D(0)#tau#_ET_i(0) - 4x10"2"0 m"-"3#centre dot#keV#centre dot#s) for 0.8 s and 2) full non-inductive current drive with 80% of the bootstrap current fraction. Physics of the internal transport barriers (ITBs) in RS plasmas, including the energy transport and the formation of ITB, were extensively studied. A nearly full current drive (92% non-inductively) was obtained with negative ion based neutral beam (NNB) injection (360 keV, 3.4 MW) in a high #beta#_p H-mode plasma (I_p=1.5 MA, B_T=3.7 T, q_9_5=4.2) with high plasma performance (#beta#_N=2.4 and H_8_9=2.56). Rise in the central electron temperature (T_e - 9 keV) resulted in the current drive efficiency #eta#_C_D of NNB reached 1.3x10"1"9 A/W/m"2, the highest for the neutral beam current drive. As for the H-mode plasmas, decrease in the pedestal ion ...

CERN Document Server

Compact Proton and Carbon Ion Synchrotrons for Radiation Therapy

Energy Technology Data Exchange (ETDEWEB)

This work analyzes the unoptimized prototype triode-sputtered, 150 microns thick tantalum coatings deposited with a 2.5 microns niobium underlayer on the bore of a large-diameter A723 steel cylinder. The coating was deposited for wear and erosion protection by Pacific Northwest National Laboratory. The phase determination was based on X ray diffraction analysis, wavelength dispersive X ray fluorescence analysis, energy dispersive X ray analysis, and hardness and electrical resistivity measurements. Both X ray diffraction and radius-of- curvature methods were used to determine residual stresses. A locally developed high-resolution pole figure technique was used to perform texture analysis. The post-firing, debonded coating showed alpha-tantalum, preferred 110 orientation, high surface stresses, tantalum oxides, entrapped krypton sputtering gas, interstitial oxygen, and other impurities. The surface and subsurface pole figures revealed broadened ...

International Nuclear Information System (INIS)

A single plasma process involving three consecutive steps has been developed for producing high gas flow catalytic nanostructures on the electrodes of proton exchange membrane (PEM) fuel cells (FC). Using a high density helicon radio frequency (13.56 MHz) plasma, nickel is sputtered onto a porous carbon support. Changing the background gas from argon to methane/hydrogen allowed 2 ?m long, 37 nm diameter carbon nanofibres (CNFs) to be grown by diffusion through the nickel clusters in a 'tip growth' mechanism at the relatively low temperature of 400 deg. C. The third step involves plasma sputtering of platinum onto the CNFs, resulting in nanoclusters (3-8 nm) being formed on the periphery of the CNFs. Four FC cathodes were synthesized on carbon paper and PTFE/carbon loaded cloth (known as gas diffusion layer, GDL), both with and without CNFs, with the Pt/CNFs nanostructures grown on PTFE/carbon loaded cloth having the best FC performances. ...

Energy Technology Data Exchange (ETDEWEB)

In recent years, the influences of acid rain such as the acidification of lake water, on bio-system by the heavy metals from effluent of soils with acid rain and also on the structural materials of buildings are seriously discussed. Sulfur and nitrogen that are contained in fossil fuels are released into the atmosphere by the fuel combustion as their oxides dissolve in rain drops as sulfite and nitrous ions, where they are further oxidized into sulfate and nitrate ions These ions lower the pH of rain water resulting so-called acid rain. Therefore, it is important to accurately determine these ions in rain water for the investigation of reality of acid rain. However, it is not easy to accurately determine these ions, especially for sulfite ions in rain water, since they are quickly oxidized by the catalytic action of metallic ions such as ...

Energy Technology Data Exchange (ETDEWEB)

There are 13 Electron Beam Ion Sources in operation which produce highly charged ions, up to Th{sup 80+} and Xe{sup 53+}. Most of the sources are used to study these ions under electron impact or when recombining with gaseous or solid targets. That provides an insight into the atomic physics of these highly charged ions and into the physics of the plasma in which such ions can be found. This paper reviews the present knowledge of atomic processes, important in the production of such ions with an EBIS.

Energy Technology Data Exchange (ETDEWEB)

A nonneutral /sup 7/Li/sup +/ ion plasma is described in which ion Langmuir waves are observed for the first time. The properties of these waves near the Brillouin density limit are investigated.

International Nuclear Information System (INIS)

The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA. (author).

Energy Technology Data Exchange (ETDEWEB)

In a reactor environment, the surface of a limiter or wall is primarily determined by the mechanism of erosion and deposition of surface material. It should be possible to use pellet injection to reduce net erosion to zero everywhere if low-Z materials are used for the surface. Erosion rates can, in general, be minimized by large area limiters and high plasma temperatures, which transmit power to the walls with less sputtering. Under ideal steady state conditions the wall surface is dominated by metallurgical effects in the wall.

International Nuclear Information System (INIS)

The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness

International Nuclear Information System (INIS)

Published in summary form only.

Energy Technology Data Exchange (ETDEWEB)

The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10[sup -15] cm[sup 2] in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, the emission factors for ...

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Negative ion based neutral beam injector is one of the most attractive heating system in future fusion reactors. In realizing the system, the crucial device which has to be developed is a high intensity negative ion source. Significant progress has been made on the negative ion source in these years. Among them, a few ampere negative ion beam were produced stably, while the divergence of negative ion beams becomes to be as low as < 10 mrad. We consider these results are demonstrating the potential of the negative ion source for the heating device in future reactors.

Energy Technology Data Exchange (ETDEWEB)

The electrochromatographic behavior of 25 metal ions on zirconium tungstate-impregnated papers is described. Six background electrolytes were used. On the basis of the differential mobilities of metal ions which depend on the ion-exchange properties of zirconium tungstate and the nature of complex formation with the electrolytes, some important binary and ternary separations have been achieved.

Energy Technology Data Exchange (ETDEWEB)

We have undertaken a study of ion mobility resolution in a miniature ion mobility spectrometer with a drift channel 1.7 mm in diameter and 35 mm in length. The device attained a maximum resolution of 14 in separating ions of NO, O{sub 2}, and methyl iodine. The ions were generated by pulses from a frequency-quadrupled Nd:YAG laser. Broadening due to Coulomb repulsion was modeled theoretically and shown experimentally to have a major effect on the resolution of the miniature device.

International Nuclear Information System (INIS)

A general expression for the current-density distribution of a focused-ion beam (FIB) in the chromatic-aberration region is set up in the form of a definite integral. With the experimentally obtained ion-energy distribution of a liquid-metal ion source, its contribution to the FIB current-density distribution is estimated. Calculated results explain the wide-exponential tail of a FIB.

Science.gov (United States)

Superconductivity of binary alloys spanning the A-15 compounds V/sub 3/Si, V/sub 3/Ge, V/sub 3/Ga, and V/sub 3/Al and the pseudobinary derivatives of these stoichiometric compounds was surveyed by studying samples prepared by rf-sputtering from alloy cathodes. The possible formation of the hypothetical A-15 binaries ''V/sub 3/P,'' ''V/sub 3/B,'' and ''V/sub 3/C'' and their pseudobinary formation with V/sub 3/Si was also explored. Efforts to form these hypothetical alloys were not successful. The T/sub c/'s were measured resistively and the structure and lattice constants were determined by x-ray analysis. A maximum T/sub c/ of 11.7/sup 0/K was obtained for A-15 V/sub 3/Al, and the importance of a suitable deposition temperature and high sputtering pressures was examined. It is proposed that large variations of T/sub c/ among ...

Energy Technology Data Exchange (ETDEWEB)

Nano-wire arrays of Niobium were produced by small angle sputtering on facetted sapphire, using the self shadowing effect of the facets. A wire width of about 80 nm was adjusted, the mean (maximum) wire height was about 20 nm (30 nm), the length can be in the cm range. Meander-film morphologies of 20 nm mean (26 nm maximum) thickness were produced by conventional sputtering onto smooth sapphire substrates at elevated temperatures. The morphology of the wires was investigated with atomic force microscopy (AFM), using contact mode. Meander-films were studied by scanning tunnelling microscopy (STM). Hydrogen loading was performed by instantaneously increasing the hydrogen gas pressure above the solubility limit. Thus, an elongated hydride could be monitored in an about 30 nm thick wire. STM studies on meander-films show the presence of cylindrical hydrides. Local out-of-plane and in-plane expansion can be explained by the formation of hydrides, ...

Energy Technology Data Exchange (ETDEWEB)

The composition of sputter-deposited HgS films was determined by electron microprobe analysis. From the relative x-ray intensity as a function of film thickness, the depth of the ionizations that produce SK sub(..cap alpha..) and HgM sub(..cap alpha..) was found to be approximately 0.65 ..mu..m at an accelerating voltage of 15 kV. This value agreed well with a value calculated from Castaings' empirical law after absorption correction. The determination of film composition was limited to sufficiently thicker films than this critical value, usually 1 - 2 ..mu..m thick. The relation between the conposition of bulk standard determined by chemical analysis and the x-ray intensity ratio was used for the correction of film composition. The results showed that the crystal structure of HgS films was independent of the composition, i.e., the growth of metastable ..beta..-HgS films was not caused by the nonstoichiometry, and that the composition of ..cap alpha..-HgS ...

International Nuclear Information System (INIS)

AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor layers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterization was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements. (author)

Energy Technology Data Exchange (ETDEWEB)

Both the sign and magnitude of residual stress can vary with the thickness of sputter deposited films. The origins of this behavior are not well understood. In this work, the authors consider the correlation between the residual stress behavior and the depth dependence of impurities in thin (2.5 nm--150 nm) sputtered Mo and Ta films. They also consider the effects of phase transformations and microstructural changes on the stress behavior. Films were deposited onto Si substrates with native oxide. The residual stress observed in the Mo films varied from highly compressive at 2.5 nm film thickness to {approximately}0 at 10 nm thickness. Ta films also exhibited a high compressive stress, which relaxed from highly compressive to tensile between 10 nm and 50 nm film thickness. Impurities in the films may originate from the sputtering targets, the background gases, and the substrate surfaces. Auger Electron Spectroscopy (AES) ...

International Nuclear Information System (INIS)

Progress in the development of negative ion sources and their application in fusion research is reviewed. (U.K.).

British Library Electronic Table of Contents (United Kingdom)

The estimation of numerical values of the mean distance of closest approach of ions, a, of alkaline-earth metal ion salts in aqueous solutions, determined from activity coefficients, as well as from different theoretical approaches, is presented and discussed.

UK PubMed Central (United Kingdom)

Despite prolonged scientific efforts to unravel the hydration structures of ions in water, many open questions remain, in particular concerning the existences and structures of ion clusters in 1∶1...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

The mechanism of abrupt increase of the giant magneto impedance (GMI) ratio in the ion irradiated Co-based amorphous ribbon has been investigated. The grazing incident X-ray diffraction and transmission electron microscope were used to characterize the samples before and after ion irradiation. The GMI-ratio considerably increased in the ion irradiated samples and the GMI response showed strong dependence on the driving frequencies. The Barkhausen noise (BN) signals are increased for the Ar ion irradiated sample with dose of 1x10^1^7 ion/cm^2. The results are interpreted in terms of GMI variation associated with domain wall dynamics.

CERN Document Server

In aqueous solutions, dissolved ions interact strongly with the surrounding water, thereby modifying the solution properties in an ion-specific manner. These ion-hydration interactions can be accounted for theoretically on a mean-field level by including phenomenological terms in the free energy that correspond to the most dominant ion-specific interactions. Minimizing this free energy leads to modified Poisson-Boltzmann equations with appropriate boundary conditions. Here, we review how this strategy has been used to predict some of the ways ion-specific effects can modify the forces acting within and between charged interfaces immersed in salt solutions.

Energy Technology Data Exchange (ETDEWEB)

Analytical and numerical calculations are presented for a reflexing electron beam type of collective ion accelerator. These results are then compared to those obtained through experiment. By constraining one free parameter to experimental conditions, the self-similar solution of the ion energy distribution agrees closely with the experimental distribution. Hence the reflexing beam model appears to be a valid model for explaining the experimental data. Simulation shows in addition to the agreement with the experimental ion distribution that synchronization between accelerated ions and electric field is phase unstable. This instability seems to further restrict the maximum ion energy to several times the electron energy.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

International Nuclear Information System (INIS)

... kinetics chemical reactions energy dependence ion-molecule collisions milli

UK PubMed Central (United Kingdom)

Synthesis of wild-type Neurospora crassa assimilatory nitrate reductase is induced in the presence of nitrate ions and repressed in the presence of ammonium ions. Effects of several...Full Text Available

International Nuclear Information System (INIS)

An overview of different Ion Beam Analysis (IBA) techniques is given. Examples of applications of the PIXE techniques to various types of samples are presented. (author)

Science.gov (United States)

The Plasma and Ion Source Technology Group at the Lawrence Berkeley National Laboratory have been developing rf-driven ion sources for the last two decades. These sources are being used to generate both positive and negative ion beams. Some of these sources are operating in particle accelerators such as the Spallation Neutron Source (SNS) at Oak Ridge, while others are being employed in various industrial ion beam systems. There are four areas where the rf-driven ion sources are commonly used in industry. (1) In semiconductor manufacturing, rf-driven sources have found important applications in plasma etching, ion beam implantation, and ion beam lithography. (2) In material analysis and surface modification, miniature rf-ion sources can be found in focused ion beam systems. They can provide ...

Energy Technology Data Exchange (ETDEWEB)

Neutral beam systems for the next generation of magnetic fusion devices will be based on negative ions. Developments are progressing steadily, and large negative ion-based systems are under preparation for JT60-U and LHD, and are being considered for ITER. An overview of the physics of the production, acceleration and neutralization of large negative ion beams is given. The present state of the art in R and D is also surveyed. (Author).

Energy Technology Data Exchange (ETDEWEB)

A summary of the topics covered in papers presented at the 1995 Brookhaven joint conference on production, neutralization, and application of negative ion beams is given. The conference topics covered included plasma ion sources, plasma seeding of these sources for increased ion production, beam extraction and transport, computer simulation and design studies, and operation of existing and experimental ion source facilities. Application of the sources to accelerator, tokamak, and thin film deposition are discussed. (AIP) {copyright} {ital 1996 American Institute of Physics.}

J-STORE (Japan)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The lowest excited level in Ni-like ions, 3d{sup 9}4s {sup 3}D{sub 3}, decays only via a magnetic octupole (M3) decay. They present calculated values of transition wavelengths and rates for ions with 30 {le} Z {le} 100. They have observed this line in Xe{sup 26+}, using the Livermore EBIT-I electron beam ion trap and a microcalorimeter, as well as a high-resolution flat-field grating spectrometer.

International Nuclear Information System (INIS)

This report is a brief review of biological and medical applications of ion-track membranes. The review aims at informing nuclear physicists about alternative (i.e. non-fundamental-science) use of heavy ion accelerators such as production of micro- and nano-porous materials. The ion-track membranes produced this way are employed in life sciences and numerous technological applications. The author focuses on recent results from the Flerov laboratory in co-operation with other scientific institutions and industrial partners.

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Results are described of the study of the analytical applicability of a highly efficient ion source developed for a mass spectrometer. Its ionizer is in the form of a partially closed cavity with a small aperture for leading out ions, heated to a high temperature. The new ion source increases the sensitivity of the apparatus in operations with transuranium elements by almost two orders of magnitude. It is possible to perform isotopic analyses with a high salt content in the sample, and to study the characteristics of nuclear fuel, even without chemical separation of the sample elements.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

Density changes in amorphous Pd{sub 80}Si{sub 20} during ion irradiation below 100K were detected by in situ HVEM measurements of the changes in specimen length as a function of ion fluence. A decrease in mass density as a function of the ion fluence was observed. The saturation value of the change in mass density was determined to be approximately -1.2%.

International Nuclear Information System (INIS)

The paper contains a numerical evaluation of the expressions for the absorptive potential in heavy ion reactions given earlier. With a standard folding expression for the real part of the ion-ion potential general good agreement is found with experimental data for the angular distributions of elastic and inelastic scattering. Special interest is attached to the case of "1"6O + "2"8Si where the calculated imaginary potential is very small at low bombarding energies. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Ion neoclassical transport with finite orbit width dynamics is calculated over whole poloidal cross section by using accurate {delta}f method which employs an improved like-particle collision operator and an accurate weighting scheme to solve drift kinetic equation. Ion thermal transport near magnetic axis shows a great reduction from its conventional neoclassical level due to non-standard orbit topology, like that of previous {delta}f simulation. On other hand, the direct particle loss from confinement region may strongly increase ion energy transport near the edge. It is found that ion parallel flow near the axis is also largely reduced due to non-standard orbit topology. In the presence of steep density gradient, ion thermal conductivity is significantly reduced, and an ion particle flux is driven by self-collision alone. (author)

Energy Technology Data Exchange (ETDEWEB)

This report reviews Soviet R and D of (1) high-intensity negative ion sources and (2) transport and focusing of negative ion beams, using Soviet open literature of the past ten years, and correlates this data with data on Soviet institutes responsible for negative ion beam development. The Soviets are developing intense negative ion beams as the basis for creating neutral beams for injection into mirror traps and tokamaks, for inertial confinement fusion, and possibly for exoatmospheric beam weapon applications. The report focuses specifically on surface-plasma-type ion sources, which were first developed in the USSR and which show great promise for creating beams of high intensity, high brightness, and low emittance. Mechanisms for optimum negative ion beam transport are also discussed.

Energy Technology Data Exchange (ETDEWEB)

The morphological evolution of ripples formed on the surface of Cd2Nb2O7 pyrochlore single crystals by focused ion beam (FIB) bombardment was investigated using in situ electron microscopy. At high ion fluences and off-normal bombardment angles, faceted surface ripples with a terrace-like structure were observed. The ripple propagation direction was oriented along the projected ion beam direction at incident angles ranging from 35 to 65 following high-dose ion bombardment. One side of the terrace was found to be perpendicular to the incident ion beam direction, while the other side was parallel to the ion beam. The terrace propagation velocity and direction were determined and interpreted on the basis of this asymmetric structure. A model based on the propagation of a shock wave that effectively self-selects a stable slope, was developed in order to explain the ...

International Nuclear Information System (INIS)

There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials.

International Nuclear Information System (INIS)

This chapter consists of some points including an introduction, the basic parts of mass spectroscope device, sample introduction into the inductively coupled plasma, pneumatic nebuliser, ultrasonic nebuliser, dry gas cloud system, laser ablation unit, inductively coupled plasma-ion source, extraction of ions from ion source, mass analysis, quad-polar mass spectrometer, dual assembly mass spectrometer, mass spectrometer by calculation of time of flight, ion interferences and the ability of resolution, ion counter, working conditions of inductively coupled plasma mass spectroscope device, efficiency of ion transportation in an inductively coupled plasma mass spectroscope device and applications of analysis using mass spectroscope of induced plasma including nuclear, industrial, geological, environmental and archaeological applications, measurement of isotopes ...

Energy Technology Data Exchange (ETDEWEB)

The present invention concerns a negative ion source electrode which can be preferably used in a neutral particle injection device using negative ions for a thermonuclear reactor. Negative ion beams are deflected to the direction opposite to the deflecting direction by magnetic fields by using an electron suppression electrode having electrode holes with the position previously displaced before negative ion beams are accelerated to have a high energy by an accelerator thereby correcting the orbit of the negative ion beams easily. In addition, since the deflection correction electrode having the electrode holes is disposed, a proper voltage is applied to the deflection correction electrode to correct the orbit of the negative ion beams conveniently. Since the deflection correction electrode has a simple structure of a thin flat plate having electrode holes, the ...

Energy Technology Data Exchange (ETDEWEB)

Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H/sup -/ or /sup 3/He/sup -/ ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams.

Energy Technology Data Exchange (ETDEWEB)

This paper describes the design of a high-voltage negative ion source based on a magnetically insulated diode and generating microsecond pulses. Plane an cylindrical cathodes have been tested. The spatial and angular distributions of negative ions in the beam have been measured. The content of negative ions with different masses in the beam are given. The ion current density measured by a Faraday cup was up to 1 A/cm{sup 2} for the radial beam and 30-40 A/cm{sup 2}.

International Nuclear Information System (INIS)

Gallium liquid-metal ion sources that have been introduced in the late 1970s have allowed the development of a new class of micro- and nanofabrication tools collectively denominated as focused ion beam (FIB) machines. To investigate the potential of a helium beam in such a FIB instrument the authors have tested a room-temperature electron beam ion trap coupled with a high resolution FIB machine. In this letter they present their first results in target imaging using a helium beam with a resolution that allows to account for a beam diameter in the submicrometer range.

Energy Technology Data Exchange (ETDEWEB)

Trapped ions are a near ideal system to study quantum information processing due to the high degree of control over the ion's external confinement and internal degrees of freedom. We demonstrate the key steps necessary for trapped ion quantum computing and focus on phonon-mediated entangling gates. We highlight several key algorithms implemented over the last decade with these gates and give a detailed description of Grover's quantum database search implemented with two trapped ion qubits.

International Nuclear Information System (INIS)

The variations of measurements were estimated for microamounts SO_4"2"-, Br"-, I"- ions in samples of carnallite by ionchromatography method. The composition of carbonate eluent was verified. The investigated minima were about 0,004 %, 0,001 %, 0,01 % for SO_4"2"-, Br"-, I"- completively correspondingly. It was shown that the limit of ion-chromatography measurement would be decreased when Br"- and I"- ions were concentrated by extraction before. Besides the determination of I"- ion in carnallite was preformed by potentiometry with I"--ionselective electrode. 6 refs.; 3 tabs.

Energy Technology Data Exchange (ETDEWEB)

The validity is given to the newly proposed two {delta}f method for neoclassical transport calculation, which can be solve the drift kinetic equation considering effects of steep plasma gradients, large radial electric field, finite banana width, and an orbit topology near the axis. The new method is applied to the study of ion transport with steep plasma gradients. It is found that the ion thermal diffusivity decreases as the scale length of density gradient decreases, while the ion particle flux due to ion-ion self collisions increases with increasing gradient. (author)

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

Energy Technology Data Exchange (ETDEWEB)

We have investigated via SQUID magnetometry and polarised neutron reflectivity the exchange-bias effect in CoO/Co sputtered multilayers. In particular, we studied the magnetisation reversal and the time relaxation of the exchange-bias field close to the coercive field H{sub c1}. Neutron intensities of all four cross sections (I++, I+-, I-+, I-) were recorded at the position of the first multilayer Bragg peak while scanning the magnetic field. From such scans we infer that the magnetisation reversal for the ascending as well as for the descending branch of the magnetic hysteresis occurs not by in-plane rotation but through domain-wall movements. The exchange-bias field, H{sub EB}, is strongly affected by thermal fluctuations. H{sub EB} decreases, following an exponential decay function with a half-life time of about 580 s at T=240 K. (orig.)

International Nuclear Information System (INIS)

Highly ordered arrays of Ni nanoholes and Fe20Ni80 antidots have been prepared, respectively, by replica/antireplica processing and sputtering techniques using nanoporous alumina membranes as templates. Geometrical characteristics as nanohole/antidot diameter, interpore distance and the overall hexagonal symmetry of arrays are controlled through the original templates. Experimental data on their hysteresis and magnetic domain structure have been taken by vibrating sample magnetometry and magnetic force microscopy, respectively. An analysis of the magnetization process, resulting magnetic anisotropy and magnetic domain structure is summarized considering the influence of those geometry aspects. In particular, the hexagonal symmetry and the density of nanohole/antidots determine the overall magnetic behavior, which is of interest in future high-density magnetic storage systems.

Energy Technology Data Exchange (ETDEWEB)

The optical emission of excited H reflected from clean Cu(110) after impingement of H/sup +/ and H/sub 2//sup +/ in the energy range of 250 eV to 20 keV per nucleon at 70/sup 0/ angle of incidence to the surface normal was measured. For incident 10 keV H/sub 2//sup +/, the highest excited hydrogen state detected was the n=10 level. The Hsub(..cap alpha..) yield was found to be fluence and energy dependent. This effect is attributed either to fast sputtered hydrogen, surface roughness or to an increase with hydrogen concentration in electron states of p-like symmetry near the Fermi level of copper. The Hsub(..cap alpha..) yield per reflected nucleon shows approximately an exponential dependence on both projectile energy per nucleon and scattered particle reciprocal velocity perpendicular to the surface.

International Nuclear Information System (INIS)

A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500 degrees C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period.As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions.

International Nuclear Information System (INIS)

The authors present an investigation of structural changes occurring in bilayer stacks with crystalline columnar growth when one of the layers is substituted by layers known to grow amorphous. In Co/Cu multilayers the Co layers were substituted by CoZr layers of varying Zr content and layer thickness. Structural characterization was performed by transmission electron microscopy (TEM). They show that the amorphization of the CoZr layers leading to a destruction of the columnar growth depends both on the Zr content and on the thickness of the CoZr layers. Additionally a change to textured growth with a normal to the substrate occurs with increasing Zr content. They explain their observations by a simple picture based on the hard sphere model.

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

International Nuclear Information System (INIS)

Composite nitrides (such as BN, TiN) are widely used in various industrial applications because of their extreme wear and corrosion resistance, thermal and electrical properties. in order to obtain composite materials with these optimal properties, it is important to elucidate whether any chemical reactions occur at nitride/metal interfaces, e.g., those involving BN-Ti/TiN. Materials of interest include the deposition by PVD of Ti and TiN on BN substrates. Some of these systems were then subjected to varying degrees of physical and thermal alteration. Detailed X-ray photoelectron spectroscopy (XPS) has therefore been rendered of these interfaces using cross-sectional display and sputter etching. Resulting structural and morphological features have been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). Diffusion of the nitridation, oxynitride formation and interfacial growth are of general interest.

Energy Technology Data Exchange (ETDEWEB)

Production of intense negative ion beams in magnetically insulated diodes was studied in order to develop an understanding of this process by measuring the ion-beam parameters as a function of diode and cathode plasma conditions in different magnetically insulated diodes. A coral diode, a racetrack diode, and an annular diode were used. The UCI APEX pulse line, with a nominal output of 1MV, 140kA, was used under matched conditions with a pulse length of 50 nsec. Negative-ion intensity and divergence were measured with Faraday cups and CR-39 track detectors. Cathode plasma was produced by passive dielectric cathodes and later, by an independent plasma gun. Negative-ion currents had an intensity of a few A/cm{sup 2} with a divergence ranging between a few tenths milliradians for an active TiH{sub 2} plasma gun and 300 milliradians for a passive polyethelene cathode. Negative ions were ...

International Nuclear Information System (INIS)

Electron cyclotron resonance (ECR) ion sources possess several advantages over ion sources conventionally used for injectors of electrostatic accelerators: improved reliability, high efficiency, simplicity, and the capability of generating bright, high-current ion beams. We have adapted a high-current ECR source originally developed as an injector for a CW RFQ proton linac to serve as a source of intense negative-ion beams for the Tandem Accelerator Superconducting Cyclotron (TASCC) facility at Chalk River. The range of ion species of the source has been extended from H1+ alone up to Bi1+, with both gaseous and nonvolatile feeds. Two intense negative-ion beams of He- and O- have been generated so far with the source coupled to a standard charge-exchange canal. We foresee no major problems generating a broad range of negative ions with this ...

International Nuclear Information System (INIS)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si"2"+, 1.0-MeV He"+ and 340-keV H"+) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. The size of He ...

International Nuclear Information System (INIS)

Negative ions have attractive features as drivers for inertial confinement fusion, because they will avoid electron cloud effects, and could be efficiently photodetached to neutrals after the final focus, which could also be beneficial in heating warm dense matter targets. The halogens have large electron affinities, and thus should be able to produce high current densities of relatively robust negative ions. Recent experiments comparing chlorine beams to argon beams using the same source, extraction optics, and diagnostics have demonstrated that Cl"- beams can be produced with similar emittance to Ar"+ beams, and with about 34 the current density from the same configuration. The observed effective beam temperature of about 13eV, and the similarity of current densities show that negative halogen beams can meet the current density and emittance requirements of heavy ion fusion. The near equivalence of the Cl"- and ...

Energy Technology Data Exchange (ETDEWEB)

PVD-coatings based on TiB{sub 2} are expected to show high wear resistance and low tendency of adhesion on metal forming tools. Coating adhesion and morphology can be modified over a wide range by varying the content of nitrogen (N{sub 2}) and the deposition parameters power and bias voltage. All coatings were deposited using commercial unbalanced magnetron equipment, the deposition was homogeneous in a volume of 400 x 400 x 400 mm{sup 3}. Hipped and hot pressed TiB{sub 2}-targets were used, nitrogen (N{sub 2}) was added as gas, Ti and Al by a solid Ti-Al-target. The tribological behaviour was tested by a pin-on-disc wear test. The coatings investigated were TiB{sub 2}, TiAlB(N), TiAl(N) and TiB{sub 2}/TiAl(N). As counterpart in the pin-on-disc wear test, 6 mm diameter spheres of steel (100Cr6), aluminium, brass and bronze were used. The experiments showed a non-uniform wear behaviour. For the combinations TiAlB(N) and TiB{sub 2} versus aluminium, a low wear volume ...

International Nuclear Information System (INIS)

The possibilities of using both selective heavy ion induced X-ray emission and secondary ion mass spectroscopy (SIMS), for the identification of impurities present at low concentrations in cadmium telluride are examined. The relative concentrations of the impurities along CdTe crystals have been determined by exciting the X-ray emission of the elements in several slices with Ar and Kr ions and by comparing the relative characteristic X-ray emission yields. As a consequence of the quasimolecular inner shell ionization mechanism in heavy ion-atom collisions, Ar and Kr ions allow a strong excitation of the main impurities seen by SIMS namely Si, Cl and Ge, As, with only a minor contribution of Cd and Te. From the changes of the concentrations of the various impurities along the crystal, informations about segregation coefficients and compensation can be obtained.

Energy Technology Data Exchange (ETDEWEB)

Ion beams of halogens can be produced either positively or negatively charged, depending on the employed ion source. At CERN-ISOLDE, although positively charged fluorine and astatine can be obtained from a hot plasma ion source, they are often contaminated by isobars and molecular sidebands. This has generated a request from the scientific community for fluorine and astatine negative ion beams free of contaminants. The high selectivity ensured by the surface ionisation process also makes negative beams of chlorine, bromine and iodine highly attractive. However, the efficiency figures for negative surface ionisation of fluorine and astatine were lower than the ones from the hot plasma. Here we report our R and D on new surface ion sources suitable for the production of negative halogen beams.

International Nuclear Information System (INIS)

The in-depth distribution of phases in c-BN films deposited by Ion Beam Assisted Deposition (IBAD) at two different ion energy values (300 and 600 eV) was investigated using the quantitative IR transmission measurements and the HREM technique. Whatever the value of the studied ion energies, the characteristic layered morphology of c-BN film is observed including the interfacial sp"2 zone between the substrate and the c-BN volume. In the case of 600 eV ion energy, this interfacial zone is less well-defined in comparison with 300 eV ion energy and the corresponding thickness is more important. Furthermore, the h-BN phase is more diluted within the c-BN film volume showing that the purest phase concentration of c-BN is found for the lowest ion energy, i.e., 300 eV.

Energy Technology Data Exchange (ETDEWEB)

The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion ...

International Nuclear Information System (INIS)

Fractionation of isotopes of the alkali metals and the alkaline earth metals in ion exchange chromatography of their chlorides was studied. The heavier isotopes of potassium and rubidium were found to be preferentially fractionated into the ion exchanger phase while the lighter isotopes of lithium, magnesium, calcium and strontium were enriched in the exchanger phase. This can be interpreted as a resultant of the relative significance of isotope effect upon dehydration and isotope effect accompanying the phase change of the hydrated metal ion. Found was no evidence of anomalous isotope effect attributable to the odd-even difference in mass number of isotopes. Based on the spectroscopic and solution chemical data (experimental and theoretical), the isotopic reduced partition function ratios of the hydrated alkaline metal ions and stretching force constants of metal ion-hydrating ...

Energy Technology Data Exchange (ETDEWEB)

Presently, most charge state distributions produced with highly charged ion sources are predicted with models that approximate the ionization process with the Lotz formula. The Lotz ionization cross sections decrease approximately geometrically with increasing charge state except for ions with very few vacancies, for ions with very few electrons, and for electron impact energies which barely exceed the ionization energy. The geometrical decrease causes these models to predict a maximum abundance for most of the charge states, which is only weakly dependent on the charge state. Experimental results, however, yield much higher abundances for ions with an empty M shell than ions with a partly filled M shell. This difference is explained with indirect ionization processes that are neglected by the Lotz approximation, and normally can be neglected for the ionization of the L shell, but ...

Science.gov (United States)

Investigations have been conducted to determine the feasibility of using collisional cooling for reducing the energy spreads and, consequently, the emittances of negative-ion beams. We have designed a gas-filled RF-quadrupole ion cooler equipped with provisions for retarding energetic negative ion beams to energies below thresholds for electron detachment at injection and for re-acceleration to high energies after the cooling process. The device has been used to cool O{sup -} and F{sup -} ion beams with initial energy spreads, {Delta}E > 10 eV to final energy spreads, {Delta}E {approx} 2 eV FWHM. Overall transmission efficiencies of {approx}14% for F{sup -} beams have been obtained. Experimental results show that electron detachment is the major loss mechanism for negative ions.

Energy Technology Data Exchange (ETDEWEB)

We present two applications of CR-39 to estimate biological effects of heavy ion irradiation. The accurate measurement of fluence of ions using CR-39 is indispensable to calculate the action cross sections for biological effects. Ions with 6 MeV/n at the Medium Energy Beam Course, HIMAC (NIRS) were extracted to the air, and degraded with the air. DNA and living cells were irradiated by ions with various specific energies at several air columns along with the Bragg curve. DNA strand breaks and cell killing were measured and the results were converted to the action cross sections using the fluence measured with CR-39 at the irradiation positions. Another example of the application of CR-39 is to identify whether the ions with a specific energy pass through the cell or stop within the cell. (author)

Energy Technology Data Exchange (ETDEWEB)

The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputtered films. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10/sup 0/K temperature wave is applied), performed at two ambient temperatures (80 and 300/sup 0/K), yielding the differential dielectric function. The sputtered films included Nb/sub 3/Ge, Nb/sub 3/Al, V/sub 3/Ga and Nb/sub 3/Ir. It is noted that Nb/sub 3/Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V/sub 3/Si, V/sub 3/Ge and single crystal Cr/sub 3/Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with the absorptance ...

Energy Technology Data Exchange (ETDEWEB)

The adsorption of glycolate anions at sputtered gold thin-film electrodes was studied in perchloric acid solutions by cyclic voltammetry experiments combined with in situ Surface Enhanced Raman Scattering (SERS) and Surface Enhanced Infrared Reflection Absorption Spectroscopy under attenuated total reflection conditions (ATR-SEIRAS). Theoretical harmonic vibrational frequencies and band intensities obtained from B3LYP/LANL2DZ,6-31+G(d) calculations for glycolate species adsorbed on Au clusters with (1 1 1) orientation were used to interpret the experimental spectra. Vibrational data confirm the bidentate bonding of glycolate anions through the oxygen atoms of the carboxylate group, in a bridge configuration with the OCO plane perpendicular to the metal surface. The DFT calculations show no significant effect of the total charge of the metal cluster-adsorbate adduct on the vibrational frequencies of adsorbed glycolate species. The infrared experimental study is ...

UK PubMed Central (United Kingdom)

SummaryTRPV1 is the founding and best-studied member of the family of temperature-activated transient receptor potential ion channels (thermoTRPs). Voltage, chemicals, and heat...Full Text Available

UK PubMed Central (United Kingdom)

Amino acid transport in membrane vesicles of Bacillus stearothermophilus was studied. A relatively high concentration of sodium ions is needed for uptake of L-alanine (Kt = 1.0 mM) and L-leucine (Kt...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundUnderstanding the interactions between ion channels and blockers remains an important goal that has implications for delineating the basic mechanisms of ion channel function...Full Text Available

International Nuclear Information System (INIS)

A survey is given of the influence of surface deformations on heavy ion reactions. Emphasis is put on the effect of zeropoint fluctuations in the entrance channel and on the effect on grazing collisions in terms of an imaginary part of the scattering potential. (orig.).

Energy Technology Data Exchange (ETDEWEB)

This report discusses the following topics: Fusion-fission in light nuclear systems; High-resolution Q-value measurement for the {sup 24}Mg+{sup 24}Mg reaction; Heavy-ion reactions and limits to fusion; and Hybrid MWPC-Bragg curve detector development.