Science.gov (United States)

... at compositions below -AlP 4 the films were still unstable, hydrolysing in room air, and the long term stability of higher aluminium phosphides is in ...

Science.gov (United States)

Potential exposure of workers to phosphide was examined during an in-depth industrial hygiene survey at the Bunge Corporation, in Kansas City, Kansas, where the gas was used as a grain fumigant. During the study, 14 men were employed at the facility. Tablets of aluminum phosphide were added to the grain mass for fumigation. General dilution ventilation resulted from outside air entering the work areas through ventilation louvers; there was also a local-exhaust ventilation system. Air samples revealed that, when the fumigant dispensers were being filled, workers in the area had significant exposure. At the time of the survey the relative humidity in the facility was high, permitting the reaction to phosphide to occur more readily. The levels of phosphide and respirable dust were reasonably low in the elevators, suggesting that the ventilation system was adequate. The author recommends that workers ...

British Library Electronic Table of Contents (United Kingdom)

A 21-year-old woman developed midesophageal stricture two weeks after ingestion of aluminium phosphide (AlP) tablets. Aluminium phosphide is a lethal protoplasmic toxin and is also the most common cause of suicidal poisoning in northern India. Upper gastrointestinal endoscopy (UGIE) showed a tight esophageal stricture 29?cm from the incisors with a circumferential ulcer. Dilatation up to 17?mm was done using Savary-Gilliard dilators. She had repeated dilatations three times at nearly two-week intervals. In view of the resistant stricture, a silicone Polyflex stent was placed across the stricture and removed after 3?months; there was no recurrence of stricture even after three months of follow-up. Patients with recurrent esophageal stricture and those with fistula may benefit from silicone ...

Science.gov (United States)

An in-depth industrial hygiene survey was conducted to evaluate worker exposures to phosphine during fumigation of grain at the Early and Daniel Co. grain elevator in Louisville, Kentucky. Stored grain was fumigated using aluminum phosphide. Aluminum-phosphide pellets were also added directly to the grain by the blender as it was poured into the storage containers. Local exhaust ventilation was used at points in the grain-moving system where grain dust was generated. Air samples were taken during full-shift periods at the breathing zone of the weighmaster, two bin floormen, and the blender. Area monitoring samples were also taken. If the operators spend considerable time in the vicinity of a bin which is being filled with grain, there is a likelihood of far greater exposure levels being noted. According to the author, further studies of the use of phosphide products at other elevators should be conducted to determine the ...

British Library Electronic Table of Contents (United Kingdom)

Fatalities resulted from aluminium phosphide (ALP) intoxication in completely healthy children with no preceded clinical sings or symptoms were presented. Data regarding circumstances, autopsy reports, histopathological examination, toxicological investigation, and police enquiries were also collected and evaluated. The affected children were females, and 6-16 years old. They were completely healthy and died suddenly in relation to some physical activities such as running, walking, and bathing, without any prior complain. The viscera showed intense congestion with moderate to severe pulmonary edema. The cause of the sudden termination of life in the reported cases is mostly cardiac ones. Physical exertion may precipitate death due to increased cardiac stress, increased oxygen demand, and b...

British Library Electronic Table of Contents (United Kingdom)

Abstract Electronic structures of two representative zigzag and armchair models of aluminum phosphide nanotube (AlPNT) were investigated by density functional theory calculations. The structures were optimized and the bond lengths, tip diameters, band gaps, and dipole moments were calculated. Moreover, the quadrupole coupling constants (CQ) were calculated for the Al-27 atoms of the optimized structures. The same values of AlP bond lengths were calculated for both models. The larger value of band gap of armchair model than the zigzag model indicated the stronger dielectric property for the former model. The values of CQ(27Al) were the largest for the Al atoms placed at the tips of both zigzag and armchair AlPNT than other Al atoms, which could reveal dominant role of the Al atoms placed at...

British Library Electronic Table of Contents (United Kingdom)

In a suicide committed using aluminium phosphide (AlP) the liberated toxic phosphine gas was detected in post-mortem specimens using a headspace gas chromatographic procedure with a nitrogen-phosphorous detector (HS-GC/NPD). At autopsy a direct sampling into airtight headspace vials for a later analysis is recommended. AlP has to be considered a potent pesticide and its use and availability should be restricted as much as possible.

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the solar cell.

Energy Technology Data Exchange (ETDEWEB)

The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). ...

Energy Technology Data Exchange (ETDEWEB)

The contaminants that are potentially present in the coal-derived gas stream and their thermochemical nature are discussed. Accelerated testing was carried out on Ni-YSZ/YSZ/LSM solid oxide fuel cells (YSZ: yttria stabilized zirconia and LSM: lanthanum strontium manganese oxide) for eight main kind of contaminants: CH{sub 3}Cl, HCl, As, P, Zn, Hg, Cd and Sb at the temperature range of 750-850 C. The As and P species, at 10 and 35 ppm, respectively, resulted in severe power density degradation at temperatures 800 C and below. SEM and EDX analysis indicated that As attacked the Ni region of the anode surface and the Ni current collector, caused the break of the current collector and the eventual cell failure at 800 C. The phosphorous containing species were found in the bulk of the anode, they were segregated and formed ''grain boundary'' like phases separating large Ni patches. These species are presumably nickel ...