Science.gov (United States)

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

Energy Technology Data Exchange (ETDEWEB)

Single-crystalline CeRh{sub 2}Si{sub 2} and CePd{sub 2}Si{sub 2} were grown by the Czochralsky pulling method and the temperature dependence of magnetic susceptibility was investigated. The crystalline electric field (CEF) states in each compound were determined by considering the tetragonal CEF Hamiltonian with mean-field approximation. Interactions between Ce{sup 3+} ion and the surrounding ligands in CeRh{sub 2}Si{sub 2} turned out to be strong and highly anisotropic in comparison to CePd{sub 2}Si{sub 2}. (orig.) 10 refs.

Energy Technology Data Exchange (ETDEWEB)

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of ...

Energy Technology Data Exchange (ETDEWEB)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such ...

CERN Document Server

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker ...

International Nuclear Information System (INIS)

20 nm thick permalloy elements, with dimensions of 500 x 500 nm"2 and 1000 x 200 nm"2, have been fabricated on 50 nm thick silicon nitride substrate by milling using a focussed ion beam (FIB) microscope. The dose of ion beam used for the milling was varied in order to achieve the best definition for the milled areas. The FIB milled elements were characterised physically by atomic force microscopy (AFM) and bright field transmission electron microscopy (TEM) and magnetically by Fresnel imaging on a TEM modified for magnetic imaging. The FIB milled elements were found to have a more irregular edge and lower magnetic fields for events such as vortex annihilation when compared to elements of the same dimensions fabricated by conventional electron beam microscopy (EBL).

Energy Technology Data Exchange (ETDEWEB)

The production method of the elastic composite containing ferrous particles and titanium barium particles dispersed in the porous silicone matrix is described in this article. Since it contains ferrous and titanium barium particles, this composite shows magnetorheological and also electrorheological properties. The electrostriction of composite samples in the electric field with maximal intensity 1.5x10{sup 6} V/m was investigated. The magnetostriction in the magnetic field with maximal induction 1 T was also investigated. It was found that samples elongate with increased electric field intensity, and the magnetic field induction was detected. By increasing the samples' elongation with increase of ferrous particles, titanium barium particles and pores number were also detected. In the investigated division of the electric and magnetic field the elongation changed in a linear way. The maximal ...

Science.gov (United States)

MAGNETIC FORMING .............. MAGNETIC INDUCTION ............ MAGNETIC MATERIALS ............ MAGNETIC MEASUREMENT .......... MAGNETIC PERMEABILITY . ...

Energy Technology Data Exchange (ETDEWEB)

In this article, a method of producing elastic ferromagnetic composite containing particles of chemical pure iron with sizes of 0.10-0.15 mm was described. The particles were dispersed in an elastic matrix of an elastic silicone rubber. The filling factor of composite by ferromagnetic particles and porous factors were changed in the range from 0.15 to 0.45. The samples of the obtained composite were placed in the magnetic field with induction of 0-8 T, produced by the Bitter-type magnet. The longitudinal magnetostriction of samples was measured by using a coaxial capacitor with a movable plate. It was found that the maximal relative elongation of samples was 4.81% and hysteresis of magnetostriction and also remanent magnetostriction amounted to 1.08%. A slow decay of remanent magnetostriction up to 0.14% in 10{sup 5} s was also observed.

CERN Document Server

A new measurement of the cosmic ray antiproton-to-proton flux ratio between 1 and 100 GeV is presented. The results were obtained with the PAMELA experiment, which was launched into low-earth orbit on-board the Resurs-DK1 satellite on June 15th 2006. PAMELA is equipped with a silicon-microstrip magnetic spectrometer and a silicon-tungsten imaging calorimeter and has been collecting data since July 2006. During 500 days of data collection a total of about 1000 antiprotons have been identified, including 100 above an energy of 20 GeV. The high-energy results are a ten-fold improvement in statistics with respect to all previously published data. The antiproton-to-proton flux ratio increases smoothly with energy up to about 10 GeV, in agreement with previous experiments, and then levels off. The data follow the trend expected from secondary production calculations and significantly constrain contributions from exotic sources, ...

British Library Electronic Table of Contents (United Kingdom)

Based on the corrected phase diagrams proper growth conditions for Li2Zn2(MoO4)3 crystals are selected. Large crystals (up to 100 mm), both impurity-free and activated by transition metal ions (Cu, Cr), are grown by the low-gradient Czochralski method. By the EPR method the charge state and structural position of copper and chromium ions are determined. The performed studies of luminescent properties show that for impurity-free crystals luminescence with ? = 388 nm with a two-exponential luminescence decay with ?1 = 2 ns and ?2 = 6 ns is observed at room temperature. At 77 K for both impurity-free crystals and those activated with transition metal ions luminescence with ? = 560 nm and the luminescence lifetime ? = 100 ns is observed, the intensity of luminescence with ? = 560 nm depending ...

Energy Technology Data Exchange (ETDEWEB)

Anti-reflective coatings made with Teflon AF2400 had the highest damage thresholds recorded for physical vapor deposited coatings at the Lawrence Livermore National Laboratory damage facility. Physical vapor deposited layers of Teflon AF2400, a perfluorinated amorphous polymer, maintained the bulk optical properties of a high transmittance from 200 nm to 1600 nm, and a low refractive index. In addition, the refractive index can be intentionally reduced by control of two common deposition parameters, deposition rate and substrate temperature. Scanning electron microscopy and nuclear magnetic resonance observations indicated that morphological changes caused the variations in the refractive index rather than compositional changes. The coatings adhered to fused silica and silicon wafers under normal laboratory handling conditions.

International Science & Technology Center (ISTC)

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

Energy Technology Data Exchange (ETDEWEB)

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been ...

British Library Electronic Table of Contents (United Kingdom)

Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

CERN Document Server

Zinc molybdate (ZnMoO4) single crystals were grown for the first time by the Czochralski method and their luminescence was measured under X ray excitation in the temperature range 85-400 K. Properties of ZnMoO4 crystal as cryogenic low temperature scintillator were checked for the first time. Radioactive contamination of the ZnMoO4 crystal was estimated as <0.3 mBq/kg (228-Th) and 8 mBq/kg (226-Ra). Thanks to the simultaneous measurement of the scintillation light and the phonon signal, the alpha particles can be discriminated from the gamma/beta interactions, making this compound extremely promising for the search of neutrinoless Double Beta Decay of 100-Mo. We also report on the ability to discriminate the alpha-induced background without the light measurement, thanks to a different shape of the thermal signal that characterizes gamma/beta and alpha particle interactions.

Energy Technology Data Exchange (ETDEWEB)

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

Science.gov (United States)

Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...

CERN Document Server

Deep donor states of muonium in silicon and germanium (status report exp SC81)

CERN Document Server

PAMELA is a satellite borne experiment designed to study with great accuracy cosmic rays of galactic, solar, and trapped nature in a wide energy range (protons: 80 MeV-700 GeV, electrons 50 MeV-400 GeV). Main objective is the study of the antimatter component: antiprotons (80 MeV-190 GeV), positrons (50 MeV-270 GeV) and search for antimatter with a precision of the order of $10^{-8}$). The experiment, housed on board the Russian Resurs-DK1 satellite, was launched on June, 15 2006 in a $350\\times 600 km$ orbit with an inclination of 70 degrees. The detector is composed of a series of scintillator counters arranged at the extremities of a permanent magnet spectrometer to provide charge, Time-of-Flight and rigidity information. Lepton/hadron identification is performed by a Silicon-Tungsten calorimeter and a Neutron detector placed at the bottom of the device. An Anticounter system is used offline to reject false triggers coming from the ...

Energy Technology Data Exchange (ETDEWEB)

We measured ESR of phosphorous-doped silicon with a low concentration of P, n, at high magnetic fields and low temperatures to investigate the states of nuclear spin. A sample with n = 6.52 x 10{sup 16} /cm{sup 3} was studied at 2.85 T (80 GHz) from 30 K to 2.3 K by field-modulating cw-ESR for a fixed 0 dB power. As the temperature was lowered, the out-of-phase signal appeared around 18 K, reached at a maximum intensity at 13 K, and disappeared around 6 K. The out-of-phase signal is referred to the field modulation. The in-phase signal started to change from the derivative of absorption spectrum at high temperatures to absorption-like shape around 15 K and asymmetry of intensity for two peaks of hyperfine-separated signals increased as temperatures was lowered. Below 10 K, the saturation of the in-phase signal started to appear. We speculate that the asymmetry is caused by saturation effect and dynamic nuclear polarization of {sup 31}P nuclear ...

International Nuclear Information System (INIS)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental ...

Science.gov (United States)

... Title : Refining the Magnetic Forming Capability. ... Abstract : The purpose of this project was to refine the in-house magnetic forming capability. ...

Science.gov (United States)

... Examples include magnetic forming tools, magnetic shielding, magnetohydrodynamic propulsion systems, and various magnetic containment ...

J-STORE (Japan)

Full Text Available

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.

Science.gov (United States)

Radial Halbach magnetic bearings have been investigated as part of an effort to develop increasingly

Science.gov (United States)

Necessary theoretical foundation is given for the treatment of magnetic stresses applied to

KoreaScience (Korea)

Full Text Available

Science.gov (United States)

Discussion of an electrohydraulic and magnetic forming process

Energy Technology Data Exchange (ETDEWEB)

This thesis describes the analysis of the semileptonic decay D{sup 0} {yields} {bar K}{sup 0} {pi}{sup -} {mu}{sup +}{nu} using FOCUS data. FOCUS is a fixed target experiment at Fermilab that studies the physics of the charm quark. Particles containing charm are produced by photon-gluon fusion from the collision of a photon beam on a BeO target. The experiment is characterized by excellent vertex resolution and particle identification. The spectrometer consists of three systems for track reconstruction (two silicon systems and one multiwire proportional chamber system) and two magnets of opposite polarity. The polarity of the magnet is such that the events of e{sup +}e{sup -} pairs produced in the target (which constitutes the main background) travel through a central opening in the detectors without interactions. Particle momentum is measured from the deflection angle in the magnets. Three multicell ...

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Energy Technology Data Exchange (ETDEWEB)

This paper addresses the stability aspects of several successful dc superconducting magnets such as large bubble chamber magnets, and magnets for the Mirror Fusion Test Facility and MHD Research Facility. Specifically, it will cover Argonne National Laboratory 12-Foot Bubble Chamber magnets, the 15-foot Bubble Chamber magnets at Fermi National Laboratory, the MFTF-B Magnet System at Lawrence Livermore National Laboratory, the U-25B Bypass MHD Magnet, and the CFFF Superconducting MHD magnet built by Argonne National Laboratory. All of these magnets are cooled in pool-boiling mode. Magnet design is briefly reviewed. Discussed in detail are the adopted stability critera, analyses of stability and disturbance, stability simulation, and the final results of magnet ...

International Nuclear Information System (INIS)

We investigate the magnetic braking of the core of an axisymmetric cloud whose rotation axis is parallel to the mean direction of the magnetic field. (author).

Energy Technology Data Exchange (ETDEWEB)

The magnetic fluid is a colloidal suspension of magnetite in kerosene, prepared by a low-cost process. Separation is accomplished in an open trough filled with magnetic fluid. A magnetic field is established in the fluid, by energizing an electromagnet having poles on each side of the trough. Due to the design of the magnet poles and air gaps, the magnetic field is strongest at the bottom, about 10,000 oersteds, and uniformly decreases in strength to about 2000 oersteds at the top of the fluid. Therefore, the magnetic field gradient increases with depth. The magnetic force attracts the entire separation medium (magnetic fluid) creating a reaction force of equal magnitude and acting in the opposite direction. This reaction created within a magnetic fluid/magnetic field combination ...

Energy Technology Data Exchange (ETDEWEB)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Science.gov (United States)

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

CERN Document Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

International Nuclear Information System (INIS)

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

J-STORE (Japan)

Full Text Available

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

... radiations isotopes magnetic moments nuclear cascades nuclear properties

Science.gov (United States)

... in the design of such devices as fusion reactors, magnetohydrodynamic generators, magnetically levitated vehicles, magnetic forming devices, and ...

Science.gov (United States)

Decoupling force exerted by magnetic forming Be coil assembly on metallic plate during forming

Energy Technology Data Exchange (ETDEWEB)

Currently there are four different concept studies trying to optimise the detector for the requirements at the ILC. In three of these detector concepts a time projection chamber (TPC) is foreseen as the main tracking device. To achieve the intended spatial resolution of 100 {mu}m, micro pattern gas detectors (MPGD) are considered for gas amplification. The two different MPGDs discussed for the ILC TPC are Micro-Mesh Gaseous Detectors (Micromegas) and Gas Electron Multiplier foils (GEMs). The current thesis shows resolution studies with a TPC prototype equipped with a triple GEM readout structure. A hodoscope made up of silicon strip sensors gives a precision reference track, allowing an unbiased measurement of the spatial resolution. High statistics measurements have been conducted at the DESY test beam facility, which provides positrons with a tunable energy between 1 GeV and 6 GeV. Using the independent measurement of the hodoscope allows systematic studies of ...

International Nuclear Information System (INIS)

This paper traces the development and progress of magnetic suspension systems and magnetic bearings in the USSR. The paper describes magnetic bearings for turbomachines, magnetic suspension systems for vibration isolation, some special measuring devices, wind tunnels, and other applications. The design, principles of operation, and dynamic characteristics of the system are presented.

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

Energy Technology Data Exchange (ETDEWEB)

Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

International Nuclear Information System (INIS)

Several recent experiments on micro- (or nano-) structured samples of ferromagnetic materials are introduced. Magnetization reversal phenomena are investigated on submicron wire samples of trilayer structure using the giant magnetoresistance effect. Domain wall movements are sensitively monitored by resistivity measurements and the velocity of propagation is determined. The contribution of domain wall to the resistivity is argued from the results on artificially designed samples of a spring-magnet system. In circular dots of permalloy, the existence of vortex magnetization is confirmed and the reversal of the vortex core magnetization is studied from magnetic force microscopy measurements. (author)

Energy Technology Data Exchange (ETDEWEB)

Three-dimensional dynamics of a compact toroid (CT) plasmoid, which is injected into a magnetized target plasma region is investigated by using magnetohydrodynamic (MHD) numerical simulations. It is found that the process of the CT penetration into this region is much more complicated than what has been analyzed so far by using a conducting sphere (CS) model. The injected CT suffers from a tilting instability, which grows with the similar time scale as the CT penetration. The instability is accompanied by magnetic reconnection between the CT magnetic field and the target magnetic field, which disrupts the magnetic configuration of the CT. Magnetic reconnection plays a role to supply the high density plasma initially confined in the CT magnetic field into the target region. Also, the penetration depth of the CT high density plasma is ...

International Nuclear Information System (INIS)

Potassium clusters arrayed in zeolite A are known to show ferromagnetic properties at low temperature. The origin of the spontaneous magnetization has been explained by a model of spin-canting in an antiferromagnetically ordered state. The direct information for the magnetic structure, however, has not been obtained so far. In the present work, we measure the neutron powder diffraction by using pulsed neutron source at KEK-KENS below and above the Curie temperature. No significant temperature-dependence was, however, obtained within the statistical errors, namely, magnetic scattering could not be detected separately. We also estimate the intensity of magnetic scattering by assuming some possible magnetic structures with considering the magnetic form factor of the cluster wave function. The intensity of magnetic scattering is estimated to be ...

Energy Technology Data Exchange (ETDEWEB)

A number of interactions between magnetic fields and matter is reviewed. The resulting forces range in magnitude from the very large, obtained in high-energy fields, to the weak ones caused by the magnetostriction of ferromagnets. The fundamentals of these interactions are highlighted, and the examples discussed are forces on dipoles, particle alignment, magnetostrictive forces, magnetic forming, magnetic stirring, levitation melting, and magnetic pulsing of tool steels. (orig.)

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

Energy Technology Data Exchange (ETDEWEB)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

International Nuclear Information System (INIS)

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

International Nuclear Information System (INIS)

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

International Science & Technology Center (ISTC)

Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

Scientific Electronic Library Online (English)

Abstract in english We present a detailed derivation of the effective dielectric constant to be used in the dispersion relation for electrostatic waves in the case of a plasma immersed in a inhomogeneous magnetic field, with inhomogeneity perpendicular to the direction of the magnetic field.

Energy Technology Data Exchange (ETDEWEB)

An analytic model of magnetic torques applied to an accreting neutron star is employed to evaluate the magnetic dipole moments of x-ray pulsars. A new type of close binary system containing a neutron star is suggested.

Science.gov (United States)

The past decade has seen the development of eddy current probes for inspection of the mildly ferro-magnetic alloy Monel 400. Due to the rapid advances in permanent magnet technology similar probes have been upgraded to magnetically saturate, and hence ins...

International Nuclear Information System (INIS)

Parameters of permanent magnets result from the combination of intrinsic properties such as saturation magnetization, magnetic exchange, and magnetocrystalline energy, as well as microstructural parameters such as phase structure, grain size, and orientation. Reduction of grain size into nanocrystalline regime (#approx# 50 nm) leads to the enhanced remanence which derives from ferromagnetic exchange coupling between highly refined grains. In this study the fundamental phenomena, quantities, and structure parameters, which define nanophase permanent magnets are presented and discussed. The theoretical considerations are confronted with experimental data for nanocrystalline Sm-Fe-N type permanent magnets. (author)

UK PubMed Central (United Kingdom)

OBJECTIVE--The study was performed to examine the influence of the exposure to magnetic fields in the potrooms of an electrolysis plant on the occurrence of musculoskeletal symptoms among the employees....Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The Muon Ionization Cooling Experiment (MICE) focusing solenoid magnets focus the muon beam within the MICE cooling channel on a liquid or solid absorber that is within the warm bore of solenoid. The focusing magnet has a warm bore of 470 mm. his magnet consists of two coils 210-mm long that is separated by an aluminum mandrel that is 200 mm long. Each of the coils has its own leads. The coils may be operated in either the non-flip mode (solenoid mode with both coils at the same polarity) or the lip mode (quadrupole focusing mode where both coils are at opposite polarity). This report describes the focusing solenoid magnet design that will be built by the vendor. The progress on the construction of the first of the focusing magnets will also be discussed in this report. Ultimately three of these magnets will be built. These magnets will be ...

Science.gov (United States)

... 31. New electric forming methods offer potentials for light metals; magnetic forming and plasma forming. ... 3, 25 Magnetic Forming ..... ...

International Nuclear Information System (INIS)

Highly ordered arrays of Ni nanoholes and Fe20Ni80 antidots have been prepared, respectively, by replica/antireplica processing and sputtering techniques using nanoporous alumina membranes as templates. Geometrical characteristics as nanohole/antidot diameter, interpore distance and the overall hexagonal symmetry of arrays are controlled through the original templates. Experimental data on their hysteresis and magnetic domain structure have been taken by vibrating sample magnetometry and magnetic force microscopy, respectively. An analysis of the magnetization process, resulting magnetic anisotropy and magnetic domain structure is summarized considering the influence of those geometry aspects. In particular, the hexagonal symmetry and the density of nanohole/antidots determine the overall magnetic behavior, which is of interest in future high-density ...

Science.gov (United States)

... M(TH) in applied magnetic fields up to ± 7 T and for temperatures ranging from 2 to 300 K. The superparamagnetic (SPM) behavior of these metallic ...

International Science & Technology Center (ISTC)

Development of Portable Normobaric Hypoxia and Pulsed Magnetic Field Firmware System for Enhancement of Radio- and Non-specific Resistance in Workers of Environmentally Hazardous Industries

International Nuclear Information System (INIS)

... dipole moments magnetic fields monocrystals neutron diffraction order-disorder

Science.gov (United States)

With the increased costs of maintaining boilers and chillers entrepreneurs around the country have offered magnetic and similar devices to facilities as viable alternatives to their maintenance program. This report gives a brief history of some of the pre...

Science.gov (United States)

Magnetic coil pressure wave generation for magnetic forming

Energy Technology Data Exchange (ETDEWEB)

From optical point of view and due to the magnetic interaction of the cold neutrons with the unpaired electron shell, magnetic materials hae a neutron spin-dependent refractive index n[sup +] [spin up] and n[sup -] [spin down]. Magnetic media such as Fe, Co and Ni react like birefringent uniaxial crystals in ordinary optica. n[sup +] and n[sup -] are the equivalent of the ordinary and extraordinary refractive indices. The specular reflection of spin polarized neutrons which is due to the discontinuity of the magnetic induction at the surface of the ferromagnet is a sensitive probe of surface and interface magnetism. We shall first give the background of the art of polarized neutron optics. Secondly, some recent examples from surface and interface magnetism will be given to illustrate the power of this technique such as the magnetic coupling ...

Science.gov (United States)

magnet research at several national laboratories through its Advanced Accelerator Technology Program. The HEP Conductor Development Program, a collaboration among national...

Energy Technology Data Exchange (ETDEWEB)

A study on development of magnetic drive packless valves for commercial purpose showed the results as follows; 1. Study on the radial rays effecting to the permanent magnets -Measurement of the strength of Nd-magnets according to irradiation of radial rays. 2. Effects of temperature on the magnetic driving device -Temperature dependency of the Nd-casting magnets. -Effects of temperature on the heat releasing fins of high-temperature valve. 3. Optimization of torque -Arranging method of permanent magnets -Measuring method and results of torque. 4. Design, manufacture and test for the pressure-resisting structure of magnetic power transmitting device -Calculation and design for the flat circular plates under pressure of the magnetic power transmitting device -Design, manufacture and test for the pressure-resisting ...

Energy Technology Data Exchange (ETDEWEB)

Tests have recently been performed at Fermilab in order to measure the energy losses due to eddy currents and iron and superconductor magnetization. These measurements were performed on six 1.5m long model magnets and eight 15m long full scale collider dipole magnets. AC losses were measured as a function of ramp rate using sawtooth ramps from 500, to 5000 Amps for both types of magnets, while bipolar studies were additionally performed on some of the short magnets. The measured magnet voltage and current for a complete cycle are digitally integrated to yield the energy loss per cycle. Measurement reproducibility is typically 5%, with good agreement between long magnet measurements and extrapolations from short magnet measurement results. Magnetization loss measurements among similar ...

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

Energy Technology Data Exchange (ETDEWEB)

The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

Energy Technology Data Exchange (ETDEWEB)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

Energy Technology Data Exchange (ETDEWEB)

Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...

British Library Electronic Table of Contents (United Kingdom)

Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...

International Nuclear Information System (INIS)

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...

KoreaScience (Korea)

Full Text Available

Science.gov (United States)

... Title : THE APPLICATION OF STEEP PULSE CURRENTS TO THE ELECTROHYDRAULIC AND MAGNETIC FORMING OF METALS. ...

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

... decoherence. Descriptors : *QUANTUM COMPUTING, NUCLEAR MAGNETIC RESONANCE, JOSEPHSON JUNCTIONS. Subject ...

Science.gov (United States)

Not Available

Science.gov (United States)

Site Error There's a problem with your browser or settings. ...

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

The MOS-technology allows to make tiny electronic lenses for multibeam electron systems. In the paper results of research and principles of designing of tiny magnetic electron lenses are submitted. Electronic lenses with a nonconventional configuration of tiny magnetic circuit and electronic lenses with coincident electric and magnetic fields in nonconventional tiny performance are considered

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The influence of rigid-body and differential rotation and of a fine-scale chaotic magnetic field and a poloidal magnetic field on the minimum mass of a main-sequence star is investigated. It is shown that rotation and a magnetic field with an energy equal to 10--20% of the star's gravitational energy increase the minimum mass of a main-sequence star by 1.5--2 times.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Helical dipole magnets are required in a project for the Relativistic Heavy Ion Collider (RHIC) to control and preserve the beam polarization in order to allow the collision of polarized proton beams. Specifications are for low current superconducting magnets with a 100 mm coil aperture and a 4 Tesla field in which the field rotates 360 degrees over a distance of 2.4 meters. A magnet meeting the requirements has been developed that uses a small diameter cable wound into helical grooves machined into a thick-walled aluminum cylinder.

International Nuclear Information System (INIS)

The compound GdPd_2Si, which is reported to order antiferromagnetically at 13 K, has been investigated by heat capacity and electrical resistivity measurement in the presence of external magnetic fields. In contrast to an earlier report, the zero-field heat capacity and resistivity data indicate two magnetic transitions at 13 and 17 K. The external magnetic field substantially influences the resistivity and heat capacity of the compound around the magnetic ordering temperature. The magnetocaloric effect, which is calculated from in-field heat capacity data, is quite large around the magnetic transition temperature. The magnetoresistance is also large near the magnetic ordering temperature. The metamagnetic transition is observed for 10 kOe magnetic field both in magnetocaloric and in magnetoresistance data. The metamagnetic transition ...

Energy Technology Data Exchange (ETDEWEB)

The characteristics of the local magnetic shear, a quantity associated with high-mode-number ballooning mode stability, are considered in heliotron/torsatron devices that have a large Shafranov shift. The local magnetic shear is shown to vanish even in the stellarator-like region in which the global magnetic shear is positive. The reason for this is that the degree of the local compression of the poloidal magnetic field on the outer side of the torus, which maintains the toroidal force balance, is reduced in the stellarator-like region of global magnetic shear because the global rotational transform in heliotron/torsatron systems is a radially increasing function. This vanishing of the local magnetic shear is a universal property in heliotron/torsatron systems with a large Shafranov shift since it results from toroidal force balance in the stellarator-like ...

Energy Technology Data Exchange (ETDEWEB)

This research deals with in the study of the use of innovating magnetic sensors in eddy current non destructive inspection. The author reports an analysis survey of magnetic sensor performances. This survey enables the selection of magnetic sensor technologies used in non destructive inspection. He presents the state-of-the-art of eddy current probes exploiting the qualities of innovating magnetic sensors, and describes the methods enabling the use of these magnetic sensors in non destructive testing. Two main applications of innovating magnetic sensors are identified: the detection of very small defects by means of magneto-resistive sensors, and the detection of deep defects by means of giant magneto-impedances. Based on the use of modelling, optimization, signal processing tools, probes are manufactured for these both applications.

British Library Electronic Table of Contents (United Kingdom)

We describe a class of organic molecular magnets based on zwitterionic molecules (betaine derivatives) possessing donor, p bridge, and acceptor groups. Using extensive electronic structure calculations we show the electronic ground-state in these systems is magnetic. In addition, we show that the large energy differences computed for the various magnetic states indicate a high Neel temperature. The quantum mechanical nature of the magnetic properties originates from the conjugated p bridge (only p electrons) in cooperation with the molecular donor-acceptor character. The exchange interactions between electron spin are strong, local, and independent on the length of the p bridge.

Energy Technology Data Exchange (ETDEWEB)

The magnetization of ultrathin bcc Fe films (two and three monolayers) on MgO was measured and compared with the behavior predicted for a two-dimensional ferromagnet. The experiment indicated that no hysteresis was present in the magnetization. Instead, the magnetization at low temperature was affected by a marked field cooling effect. These observations lead to the conclusion that films of Fe on MgO of such thickness exhibit superparamagnetic behavior as if they were not entirely continuous. In contrast, films thicker than five monolayers exhibit a magnetic response close to that of bulk iron.

Energy Technology Data Exchange (ETDEWEB)

Magnetic fluctuations present in the paramagnetic Mn{sub 0.81}Ni{sub 0.19} system have been investigated by measuring inelastic magnetic neutron scattering from a single crystal at temperatures of 450, 585 and 700 K. Antiferromagnetic correlations are observed to be present at all the temperatures studied. The spectral width of the magnetic scattering has been observed to increase with temperature, while the spatial range of the magnetic correlations is seen to decrease as the temperature is raised. The wave-vector-dependent susceptibility is found to follow a Curie-Weiss law near the (1 0 0) position, in agreement with theoretical predictions.

CERN Document Server

The homogeneity of the magnetic field in the LHC dipoles strongly depends on the correct position of the superconducting cables: this is related to the quality of the dipole components, such as the dimension of the coil spacers (copper wedges), of the cable and of the collars. The performance in operational conditions is also affected by the magnetization of the cables. In this work, we analyse the measurements of these quantities during the production of the 1276 LHC dipoles, their trends, and the relation to the measured magnetic field. A novel mtehod to locate electrical shorts based on the analysis of magnetic measurements is also presented, and applications to 15 dipoles reascued during the production is given.

Energy Technology Data Exchange (ETDEWEB)

Anisotropic Nd{endash}Fe{endash}B magnet powders can be produced by the hydrogenationdecomposition-desorption-recombination (HDDR) process from Nd{endash}Fe@ xnB{endash}Co{endash}M ({ital M}=Ga, Zr, Nb, Hf, and Ta) alloys. The present status of those HDDR powders and the bonded magnets made from them are reviewed with regards to the powder particle size dependence of their magnetic properties, their magnetic thermal stability, and their magnetization behavior. The results of a mechanistic study on the recombination step are also presented. The magnetic properties of the anisotropic HDDR powder depend relatively little on the powder particle size. Bonded magnets with a density of {approximately}6.20 g/cm{sup 3} and a BH{sub max} of 18.5{endash}20.5 MGOe can be produced from anisotropic HDDR powders with particle sizes of below 300 {mu}m diam. ...

Energy Technology Data Exchange (ETDEWEB)

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

International Nuclear Information System (INIS)

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...

Energy Technology Data Exchange (ETDEWEB)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

Energy Technology Data Exchange (ETDEWEB)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)

Energy Technology Data Exchange (ETDEWEB)

A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}

International Nuclear Information System (INIS)

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.

Energy Technology Data Exchange (ETDEWEB)

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

International Nuclear Information System (INIS)

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

Science.gov (United States)

A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).

International Nuclear Information System (INIS)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

British Library Electronic Table of Contents (United Kingdom)

Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.

International Nuclear Information System (INIS)

The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.

International Nuclear Information System (INIS)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

British Library Electronic Table of Contents (United Kingdom)

An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...

Energy Technology Data Exchange (ETDEWEB)

The magnetic separation technology using sub-microsized ferromagnetic particle is indispensable in many areas of medical biosciences. For example, ferromagnetic particles (200-500 nm) are widely used for cell sorting in stem cell research with the use of cell surface-specific antigens. Nanosized ferromagnetic particles (10-20 nm) have been suggested as more suitable in drug delivery studies given their efficiency of tissue penetration, however, the magnetic separation method for them has not been established. One of the major reasons is that magnetic force acting on the object particles decreases drastically as a particle diameter becomes small. In this study, magnetic force acting on the targets was enhanced by the combination of superconducting magnet and the filter consisting of ferromagnetic particle. By doing so, we confirmed that Fe{sub 3}O{sub 4} of 20 nm in diameter was ...

International Nuclear Information System (INIS)

With "1"5"1Eu-Moessbauer spectroscopy and other methods the complex magnetic properties of Eu_2PdSi_3, arising from the two crystallographically different lattice sites of the Eu"2"+ ions, have been already studied. Here we study the impact of magnetic dilution of the magnetic Eu"2"+ sites by non-magnetic Y"3"+ ions. A previous specific heat study has found reduced magnetic ordering temperatures with strong indication of disorder effects like in magnetic spin glasses. Here we provide from "1"5"1Eu-Moessbauer spectroscopy detailed information of the impact of Y"3"+ substitution on the magnetic properties of the two lattice sites, well distinguishable in the "1"5"1Eu-spectra. Since the substitution of the larger Eu"2"+ ions by the smaller Y"3"+ ions is connected with a lattice contraction, we also applied high pressure to the Eu_2PdSi_3 sample ...

Energy Technology Data Exchange (ETDEWEB)

The electrical resistivity, Hall effect, and magnetic susceptibility of single-crystal UPd[sub 2]Si[sub 2] have been studied between 4.2 and 300 K. A large anisotropy was observed in both the magnetic and transport properties. There is a quadratic temperature dependence of the resistivity for a range of temperatures between 4.2 and 80 K. At higher temperatures, the resistivity indicates a Kondo-type behavior. The behavior of these quantities is accounted for by the magnetic phase transitions at 108 and 136 K reported from neutron-scattering studies. At high temperatures, the magnetic susceptibility of UPd[sub 2]Si[sub 2] is Curie-Wiess-like along the [ital c] axis. The temperature dependence of the Hall coefficient above 108 K is accounted for by a theoretical model invoking skew scattering of conduction electrons by localized magnetic moments.

CERN Document Server

We report on the magnetic hyperthermia properties of chemically synthesized ferromagnetic 11 and 16 nm Fe(0) nanoparticles of cubic shape displaying the saturation magnetization of bulk iron. The specific absorption rate measured on 16 nm nanocubes is 1690+-160 W/g at 300 kHz and 66 mT. This corresponds to specific losses-per-cycle of 5.6 mJ/g, largely exceeding the ones reported in other systems. A way to quantify the degree of optimization of any system with respect to hyperthermia applications is proposed. Applied here, this method shows that our nanoparticles are not fully optimized, probably due to the strong influence of magnetic interactions on their magnetic response. Once protected from oxidation and further optimized, such nano-objects could constitute efficient magnetic cores for biomedical applications requiring very large heating power.

Science.gov (United States)

Sensitive and quick-response nonlinear inductance characteristics are found for high Tc superconducting (YBa/sub 2/Cu/sub 3/O/sub 7-chi/) disk cores at 77K in which soft magnetic BH hysteresis loops are observed. Various quick response magnetic devices such as modulators, amplifiers and sensors are built using these cores. The magnetizing frequency can be set to more than 20 MHz, which is difficult for conventional ferromagnetic bulk materials such as Permalloy amorphous alloys and ferrite. New quick-response fluxgate type magnetic-field sensors are made using ac and dc voltage sources. The former is used for second-harmonic type sensors, while the latter is for voltage-output multivibrator type sensors. Stable and quick-response sensor characteristics were obtained for two-core type multivibrators.

British Library Electronic Table of Contents (United Kingdom)

We investigated the magnet field dependence of the X-ray pulse height and the critical current of a Ti/Au bilayer TES micro-calorimeter. The pulse height was strongly affected by the magnetic field intensity applied perpendicularly to the TES surface. We found that the critical current at zero temperature, I c0, decreased by a factor of two by applying a magnet field of ?10??T. Our data are consistent with a TES sensitivity proportional to (I/I c0)?2/3, as predicted by the Ginzburg-Landau theory. This fact implies that the shape of the R?T curve of the TES is partly determined by the critical current of the superconductor. In order to make our TES microcalorimeters less sensitive to the external magnetic field, we fabricated devices equipped with on-chip magnetic shielding. One device has ...

Science.gov (United States)

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

International Nuclear Information System (INIS)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...

Energy Technology Data Exchange (ETDEWEB)

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

Science.gov (United States)

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...