Statement of problem The use of titanium has increased for metal ceramic restorations, as well as for use in titaniumimplants, with developments in CAD/CAM technology. Some surface treatments of titanium have been introduced to enhance the titanium bond strength to low-fusing porcelains; however, a more reliable, easily used dental laboratory method has not been established. Purpose The purpose of this study was to compare the effect of laser etching as a titanium surface treatment with 3 other surface treatments (machining, airborne-particle abrasion, and acid etching), evaluating their ability to enhance the bond strength between a titanium substrate and porcelain. Material and methods A total of 64 specimen rods of commercially pure titanium (ASTM grade 2, 20 mm in length and 5.7 mm in...
BackgroundTitanium and titanium alloys are widely used for fabrication of dental implants. Since the material composition and the surface topography of a biomaterial play a fundamental...Full Text Available
BackgroundOsseointegration is crucial for the long-term success of dental implants and depends on the tissue reaction at the tissue-implant interface. Mechanical properties and biocompatibility...Full Text Available
Titanium and its alloy Ti6Al4V enjoy widespread use in various biomedical applications because of favourable local tissue response, higher corrosion resistance and fatigue strength than the stainless steels and cobalt-chromium alloy previously used. The study reported in this paper aims to optimize the conditions of nitrogen ion implantation on commercially pure titanium and to correlate the implantation parameters to the corrosion resistance. X-ray photoelectron spectroscopy was used to analyse surface concentration and the implantation processes. An improvement in the electrochemical behaviour of the passive film was shown to occur with nitrogen ion implantation on titanium, in simulated body fluids. (UK).
One of the effective methods of deep modification of the surface of steels and alloys is the combination of ion implantation and plasma nitriding. In this work, the long-range effect is demonstrated in the case of combination of the effect of high- and low-energy ions of nitrogen on a martensitic steel for each ion implantation is usually not effective, and a titanium alloy used widely in industry.
ABSTRACT Purpose: The aim of this two-center study was to evaluate screw-type titaniumimplants with a chemically modified, sandblasted and acid-etched surface when placed in the posterior maxilla or mandible, and loaded 21 days after placement. Material and Methods: All 56 patients met strict inclusion criteria and provided informed consent. Each patient displayed either a single-tooth gap, an extended edentulous space, or a distal extension situation in the posterior mandible or maxilla. Eighty-nine dental implants (SLActive, Institut Straumann AG, Basel, Switzerland) were inserted according to an established nonsubmerged protocol and underwent undisturbed healing for a period of 21 days. Where appropriate, the implants were loaded after 21 days of healing with provisional restorations i...
Peri-prosthetic infections are notoriously difficult to treat as the biomaterial implant is ideal for bacterial adhesion and biofilm formation, resulting in decreased antibiotic sensitivity....Full Text Available
Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.
The review provides a general idea about the types of metallic alloys and the pure metals used as implant materials in dental and orthopedic surgery. Their corrosive behavior in both real solutions and various media that model human biological fluids is described. Based on the literature data, it is concluded that multicomponent alloys containing titanium, niobium, zirconium, tungsten, molybdenum, aluminum, and silicon are the most resistant to corrosion. Implants made of different types of stainless steel are preferred when manufacturing orthopedic devices for short-term use.
The purpose of this investigation was to simulate a machining front from an abrasive waterjet and its movements in a ceramic material. Wear factors affecting the abrasive waterjet nozzle were also to be established. Therefore, a low inclination angle (9[degree]) was used between the nozzle and test sample, simulating a moving machine front. A standard nozzle with an inner diameter of 0.76 mm was used in the test, and it was placed close to the samples. The outer diameter of the abrasive nozzle was 9.5 mm. The high wear rate from abrasive waterjets makes it possible to machine hard ceramics-including dense alumina, titanium boride, silicon nitride, and composites-at high machining speeds.
Brachytherapy consists of sealed radioactive source implantation. The diversity in the nature of radioelements, in their energy and activity requires strict implantation and utilization rules. These rules include radioactive source physical parameters check, after-loading machine and treatment planning system quality assurance and safe and reproducible dosimetric systems. Patient and medical workers information guarantee radioprotection and prevention of accidental exposures. (authors)
SP-700, an emerging #beta#-rich #alpha#+#beta# titanium alloy, is designed to improve superplastic formability as well as mechanical properties over Ti-6Al-4V alloy. Owing to its fine microstructure and low #beta#-transus temperature, it is superplastic-formable at temperature below 1,073K (800 C) with low flow stress. Remarkable workability of this alloy is also retained in conventional Manufacturing processes. Another advantage of SP-700 is heat treatment response which includes deep hardenability and quick aging kinetics. Corrosion resistance and machinability are equivalent to or better than Ti-6Al-4V alloy.
Excellent mechanical properties and corrosion resistance combined with low weight qualify ?-titanium materials for lightweight applications in aviation, automotive and energy engineering. Thus far, actual applications of these materials have been limited due to high material costs and limited processing knowledge. One approach for developing resource-efficient manufacturing methods is the application of incremental forming methods. This article focuses on the development of the incremental spin extrusion process, which creates hollow profiles from solid bars. This method allows hollow shape manufacturing with a much higher flexibility than other forming methods and a significantly improved material utilization in comparison to machining methods, such as deep hole drilling. Beta-titanium al...
Natural bone consists of hard nanostructured hydroxyapatite (HA) in a nanostructured protein-based soft hydrogel template (ie, mostly collagen). For this reason, nanostructured HA has been an intriguing coating material on traditionally used titanium for improving orthopedic applications. In addition, helical rosette nanotubes (HRNs), newly developed materials which form through the self-assembly process of DNA base pair building blocks in body solutions, are soft nanotubes with a helical architecture that mimics natural collagen. Thus, the objective of this in vitro study was for the first time to combine the promising attributes of HRNs and nanocrystalline HA on titanium and assess osteoblast (bone-forming cell) functions. Different sizes of nanocrystalline HA were synthesized in this study through a wet chemical precipitation process following either hydrothermal treatment or sintering. Transmission electron microscopy images showed that ...
Research highlights: The dental implant of titanium could be modified by anodic oxidation. It was found that incorporation of strontium ions into the matrix increase the bone formation. In this study, we try to investigate the effect of corrosion property and bioactivity on coatings containing strontium by anodic oxidation. The results suggest that coatings containing strontium on titanium by anodic oxidation has the potential to show the stability and bioactivity in the clinical use. - Abstract: Pure titanium (Ti) and titanium alloys are considered as bio-inert materials in clinical use. Bioactivity is the ability to induce bone-like apatite on the material surface. The micro-arc oxidation (MAO) technique is an effective method for improving the surface properties of titanium. The aim of this study was to investigate the bioactivity and corrosion behavior of ...
Intervertebral spacers for anterior spine fusion are made of different materials, such as titanium and cobalt chromium alloys and carbon fiber-reinforced polymers. Implant-related susceptibility artifacts can decrease the quality of MRI scans. The aim of this cadaveric study was to demonstrate the extent that implant-related MRI artifacting affects the postfusion differentiation of determined regions of interest (ROIs). In six cadaveric porcine spines, we evaluated the postimplantation MRI scans of a titanium, cobalt-chromium and carbon spacer that differed in shape and surface qualities. A spacer made of human cortical bone was used as a control. A defined evaluation unit was divided into ROIs to characterize the spinal canal as well as the intervertebral disc space. Considering 15 different MRI sequences read independently by an interobserver-validated team of specialists the artifact-affected image ...
Introduction: There are many problems in the radiological diagnosis of aseptic loosening in total hip arthroplasty. Computed tomography (CT) and magnetic resonance tomography (MRT) are not usable for metallic implants (stainless steel, cobalt alloy, titanium alloy). Material and Methods: From April 1993 to December 1993 15 CFRP non-cemented hip prostheses have been implanted. In a prospective clinical study plane radiographs, CT and MRT have been analysed. Results: Three stems were revised (1 femoral fracture, 1 severe thigh pain, 1 aseptic loosening). CFRP are not visible in plane radiographs. There was a complete (two-third of the cases) or nearly complete (one-third of the cases) small sclerotic interface between the prosthesis and the bone, these were apparent in CT and MRT in stable implant cases and did not have any clinical correlations. Discussion: The small sclerotic interface is quite ...
General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional ...
Based on information contained in literature, patents and catalogs a review is presented of powder-rolling metallurgy abroad. Statistics are given on the output of powder metallurgy in several countries. In the USA both the dense type of rolled metal for manufacturing various machine parts and the porous variety for making filters are produced. Four main types of technological processes are analysed: the usual flow chart for cold rolling, rolling of preheated powder, rolling in free-flowing state, and rolling with heated rollers. Of these four processes the first is most widely used. Fowders consisting of spherical particles (heat-stable alloys from nickel or high titanium alloys), which are difficult to work with, have not yet found wide practical application in powder metallurgy abroad. Literature data show that granulated heat-resistant alloys can be cold-treated under pressure only after they are powdered. The best methods for pulverizing ...
To improve the surface properties of magnesium alloy, a lining process using shot peening was carried out. The lining of magnesium alloy with metals such as titanium and nickel is useful in heightening the corrosion and wear properties for the components. In the shot peening experiment, the foil set on the magnesium workpiece is pelted with many shots at a high velocity. The foil is bonded to the surface of the workpiece due to plastic deformation induced by the collision of the shots. A pure aluminum foil is inserted between the hard foil and magnesium workpiece to assist the bonding. To heighten the bondability, the foil and workpiece are heated and the flow stresses of the metals are reduced. In this experiment, a centrifugal shot peening machine with an electrical heater was employed. The workpieces were commercially magnesium alloys AZ31B and AZ91D, and the foils were commercially pure aluminum, pure titanium and pure ...
An original device and a method of its application for restoring of the function of relatively incompetent valves (both patented) are elaborated. Application of the new device allows to lower the difficulty of surgical treatment, to decrease the duration of operation and post-operative period. The long-term results of six-year long experience of its application are presented. The patients examination after 2,5-3,0-year post-operation period shows perfect vein valve correction. A device for stone extraction from tubular organs (patented) fabricated with titanium nickelide superelastic alloy is presented. The new suggested design is free of the drawback inherent in the previous one. The working element of the device is formed as a truncated cone or a truncated cone coaxial with the cylinder (the previous design was formed as a full cone) that prevents overstraining and residual strain accumulation during the manipulation process. Since the first publication the ...
Zirconium is a transition element located along with sister elements titanium and hafnium in Group IVB of the periodic table. It is grayish white metal, with a density somewhat less than carbon steel. Zirconium is the ninth most common metallic element in the earth's crust, and is more abundant than zinc, lead, nickel, or even copper. Zirconium is exceptionally resistant to corrosion by many common acids and alkalis. It is resistant to most organic acids, such as formic, acetic, lactic, and oxalic acids. It also has a high resistance to localized forms of corrosion, such as pitting, crevice corrosion, and stress corrosion cracking. Its corrosion resistance is caused by the formation of a dense, tenaciously adherent, chemically inert oxide film on the surface. This oxide film protects the base metal from both chemical and mechanical attack at temperatures up to about 400 C (750 F). This article describes zirconium's formability, machinability, ...
Peptide sequences such as lysine-arginine-serine-arginine (KRSR) selectively bind transmembrane proteoglycans (e.g. heparin sulfate) of osteoblasts (bone-forming cells) and are, therefore, actively being investigated for orthopedic applications. Further, nanophase materials (or materials with grain or particle sizes less than 100 nm) are promising new materials that promote new bone growth more than compared to conventional (that is, micron grain or particle size) materials. To combine the above two promising approaches for improving orthopedic implants, the objective of this in vitro study was to functionalize titanium (Ti) surfaces (both nanophase and conventional) with KRSR peptides and study their osteoblast cell adhesive properties. Materials were characterized by X-ray photoelectron ...
... Title : Effect of Yttrium on the Microstructure of Titanium Alloys,. ... The yttrium was added in the melting stage as an oxide or in the elemental form. ...
For optimizing the microstructure of the (#alpha# + #beta#)-titanium alloy TiAl5Fe2.5 the content of the two alloying elements aluminium and iron in the #alpha#- and #beta#-phase was determined by microprobe analysis. The alloys with the composition of the #alpha#- and of the #beta#-phase at 850 degC TiAl6Fe0.5 (#alpha#-phase) and TiAl3.5Fe6.5 (#beta#-phase) were prepared by arc melting and rolling at 850 degC. The mechanical properties of the '#alpha#'- and of the '#beta#'-phase-alloy are compared with the properties of the (#alpha# + #beta#)-alloy TiAl5Fe2.5 in the as rolled and swaged condition and after an additional aging at 550 degC. By this optimizing process it was possible to achieve a tensile strength of Rsub(m) = 1012 N/mm"2, an yield strength of Rsub(p0.2) 954 N/mm"2 and an elongation at fracture A = 14.5% in the TiAl5Fe2.5-alloy, although the degree of hot deformation was small. By a higher degree of deformation these properties can be improved. ...
Aim.- To describe the clinical aspects of implantable cardioverter defibrillators care in Sweden with focus on organisation, the role and education of nurses, patient information and education and areas in need of improvement. Background.- Implantable cardioverter defibrillators implantations have developed rapidly in recent years and are now an established arrhythmia treatment. The expanding indication for implantable cardioverter defibrillators implantation demands new competencies and resources in the implantable cardioverter defibrillators team members. Methods.- Participants were recruited among physicians and nurses in all of the hospitals implantingimplantable cardioverter defibrillators (n-=-16). Data were collected by a questionnaire. Additionally, all written educational materia...
Based on a recent investigation that modeled the elastic properties (ie, strength, stiffness and range) of multistranded wires made from linearly elastic materials, three-stranded (triple) and six-stranded coaxial (coax) stainless steel (SS) wires were compared to single-stranded (single) SS and conventional nickel titanium (NiTi) leveling wires. To measure Young's modulus of elasticity (E), flexural tests were performed with an Instron mechanical testing machine in a three-point bending arrangement having a span length of 8.9 mm or 12.5 mm. A strong correlation between wire stiffness and the area moment of inertia demonstrated that strand interaction was negligible at low activations and that E = 199 GPa was constant even for the heavily drawn coax strands. Using the Instron with an extensometer, the 0.1% yield strengths (sigma(YS)) of the single SS wires and the straight inner strands within the coax wires were tested. The ratio of the ...
The current--density profile of a focused ion beam (FIB) has a central peak accompanied by broader ``wings`` that, while unimportant in lithographic applications, can lead to unwanted effects during an implantation operation. The origin of the wings, and hence the best way to minimize them, is not clear and needs further study. We have measured the line profiles of several of the ions available in our FIB machine as a function of a number of variables, under ultrahigh vacuum (UHV) conditions. No effects are observed from changes in emission current or deliberate defocusing of the objective lens. There are some changes with beam aperture and/or current, but the biggest differences seem to be associated with a change of source type and hence, possibly, with a change in the source/extractor configuration or in the alloy and the emission process. The wing amplitudes are appreciably lower than many previously observed, and their profiles, at least ...
The current--density profile of a focused ion beam (FIB) has a central peak accompanied by broader ''wings'' that, while unimportant in lithographic applications, can lead to unwanted effects during an implantation operation. The origin of the wings, and hence the best way to minimize them, is not clear and needs further study. We have measured the line profiles of several of the ions available in our FIB machine as a function of a number of variables, under ultrahigh vacuum (UHV) conditions. No effects are observed from changes in emission current or deliberate defocusing of the objective lens. There are some changes with beam aperture and/or current, but the biggest differences seem to be associated with a change of source type and hence, possibly, with a change in the source/extractor configuration or in the alloy and the emission process. The wing amplitudes are appreciably lower than many previously observed, and their profiles, at least ...
This paper describes a process for the direct production of a superconductive niobium-titanium alloy during reduction of niobium pentoxide. It comprises: mixing at least one of titanium metal powder and titanium dioxide powder with niobium pentoxide powder and aluminum powder; heating the resulting mixture to form a niobium-titanium alloy and a slag consisting essentially of aluminum oxide; and separating the alloy and the slag.
Accurate lung tumor tracking in real time is a keystone to image-guided radiotherapy of lung cancers. Existing lung tumor tracking approaches can be roughly grouped into three categories: (1) deriving tumor position from external surrogates; (2) tracking implanted fiducial markers fluoroscopically or electromagnetically; (3) fluoroscopically tracking lung tumor without implanted fiducial markers. The first approach suffers from insufficient accuracy, while the second may not be widely accepted due to the risk of pneumothorax. Previous studies in fluoroscopic markerless tracking are mainly based on template matching methods, which may fail when the tumor boundary is unclear in fluoroscopic images. In this paper we propose a novel markerless tumor tracking algorithm, which employs the correlation between the tumor position and surrogate anatomic features in the image. The positions of the surrogate features are not directly tracked; instead, we ...
The possibility of rapid heat treatment (RHT) application to titanium castings has been studied. It was shown that such treatment provides a significant improvement of intragrain structure and mechanical properties of cast ({alpha}+{beta})-titanium alloys. ((orig.))
Chemical and phase homogeneity of titanium-niobium sponge, produced by a combined magnesium-thermic reduction of niobium pentachloride and titanium tetrachloride mixtures, is investigated. It is ascertained that a sponge consists of spherical shape particles and has a large number of pores. Particle sizes are reduced with niobium being substituted for titanium from 50-500 #mu#m for titanium sponge to 1-40 #mu#m for niobium one, which testifies to the bormation in a titanium-niobium sponge of an alloy and not a mechanical mixture. A number of solid solutions is detected by X-ray phase analysis. Lattice parameters are determined.
... Accession Number : ADD815206. Title : Waterjet Cutting System Adds Value to Titanium Parts. Descriptive Note : Journal article. Corporate Author : ...
Hilled Bend Spechene of an Alpha-Beta Titanium Alloy. Ti-6M14V. ..... The all beta titanium alloy was nllled from both sides; only the edges were taped. ...
Consideration is given to the process of the formation of a titanium sponge alloyed with niobium or tantalum, in the joint metallic reduction of titanium, niobium and tantanum chlorides. A percentage composition of the phases observed and the structure of the alloyed sponge have been studied. It is shown that after one remelting operation of the alloyed sponge the alloys of titanium with niobium and tantalum have a uniform component distribution. At the stage of chloride reduction there appear solid solutions based on titanium and an alloying component. The stage of vacuum separation of the reaction mass is associated with a mutual dissolution of the primary phases and the formation of the solid solutions of the alloyed titanium sponge, which, by their composition, are close to the desired alloy composition. The principal features of the formation of a titanium ...
... Accession Number : ADD135818. Title : Performance of Titanium in Flue Gas Desulfurization Scrubber Systems,. Descriptive Note : Journal Article,. ...
Observations concerned with the formation of isothermal #omega# in the beta-titanium alloy RMI (38-6-44) are presented as part of a more general study of the aging characteristics of the alloy.
Titanium alloys are characterized by poor tribological properties, and the traditional use of titanium alloys has been restricted to nontribological applications. The deposition of a well adherent diamond coating is a promising way to solve this problem. In this study, the tribological properties of diamond-coated titanium were studied using a pin-on-disk tribometer, and the results were compared with those of pure titanium and plasma nitrided titanium. The tribological behavior of pure titanium was characterized by high coefficient of friction and rapid wear of materials. Plasma nitriding improved the wear resistance only under low normal load; however, this hardened layer was not efficient in improving the wear resistance and the friction properties under high normal load. Diamond coating on pure titanium improved the wear resistance of ...
The loosening equipment consists of a base machine and four-link suspension mechanism which is a cross frame with loosening gear connected to the base machine by universal hinges. In order to improve the reliability of the machine, the drive of transverse shifting in the cross frame is made of symmetrically arranged, shock-absorbing, hydraulic cylinders which are connected by additional universal hinges to the base machine and the lower pull rods. The design of the loosening machine guarantees its reliable operation on soil with significant quantity of hard inclusions.
An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.
Cyclic strength of #alpha#+#beta#-titanium alloy BT3-1 is studied under load frequencies of 33 and 300 Hz. The increase in the cyclic strength with growing frequency is caused by formation of FCC interphase layers of titanium hydrides. Their formation is one of possible ways of raising the fatigue strength of titanium alloys. Peculiarities of FCC interlayer formation in #alpha#+#beta# phases under loading frequency variation are revealed.
In this paper a study is made of the structure and mechanical properties of the #beta# alloy system Ti-Mo-Zr-Sn (the composition of which is equivalent to the #beta# III alloy used abroad) containing different amounts of carbon. Study of the #beta#-titanium alloy containing 0.1% C revealed the presence of particles of titanium carbide. Separation of the titanium carbide promotes a reduction in impact strength, an increased tendency toward cold shortness, and poorer workability. (author).
Results are reported which were obtained when investigating the anodic behavior of titanium in sodium iodide solutions. It was concluded that in order to explain the special features in the anodic behavior and anionic anodic activity of titanium one must take into account, both a redistribution of the potential drop between the oxide and the Helmholtz layer and a potential-dependent variation of the catalytic and adsorption properties of the oxidized titanium anode.
Plasma nitriding was applied to improve the surface performance of titanium bipolar plate. XRD and SEM results showed a titanium nitride layer was formed after nitridation. In comparison with pure titanium, the interfacial contact resistance of plasma nitrided titanium was reduced to some extent by the nitridation treatment. However, high corrosion current was observed under electrochemical tests in 0.5 M H{sub 2}SO{sub 4} + 5 ppm HF. Both the electrical conductivity and corrosion resistance of the surface of plasma nitriding titanium did not reach the level of graphite. Some more improvements are expected in the plasma nitriding process or another surface modification on pure titanium. (author)
Purpose: In the present study the reduction of artifacts using an extended CT scale technique was examined in 5 vitallium and 5 titanium-aluminium-vanadium tumor prostheses. Methods: 5 titanium-aluminium-vanadium and 5 vitallium distal femur Mutars {sup trademark} tumor prostheses (Mutars {sup trademark} - Modular Universal Tumor And Revision System) were implanted in 10 human femur specimens. 110 artifical drill hole lesions of 1 mm, 2 mm, 3 mm, 5 mm and 8 mm diameter were placed in the bone around the hexagonal stem of the tumor prosthesis and furthermore in the proximal part of the femur. All specimens were examined using conventional CT and an extended CT scale technique in a slice thickness of 3 mm. Results: In the proximal part of the femur all drill holes could be detected using 3 mm slices, no artefacts were observed. Along the hexagonal stem smooth lines arising from each hexagonal plane could be observed. This ...
BackgroundThe successful use of zirconia ceramics in orthopedic surgery led to a demand for dental zirconium-based implant systems. Because of its excellent biomechanical characteristics,...Full Text Available
Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. Various diagnostic techniques were used to assess the structural and electronic properties of these crystals in their as-implante...
This article describes issues concerning music perception with cochlear implants, discusses why music perception is usually poor in cochlear implant users, reviews relevant data, and describes...Full Text Available
Purpose:To provide a literature review of implant related complications from bilateral NewColorIris implantation (Kahn Medical Devices, Panama City, Panama).Methods:A...Full Text Available
A comparison of the results of machine and human information retrieval using MEDLARS and the printed Index Medicus indicates that at present neither method is entirely satisfactory...Full Text Available
Morphological, Electrophysiological and Behavioral Investigations of the Nervous Tissue Developed from the Embryonic Matrix Zone Cells of the Dorsolateral Walls of Lateral Ventricles, Implanted into the Lesioned Regions of the Adult Rat's Brain
Fluorescein angiography of the iris was performed on patients with plastic lens implants with cystoid oedema of the macula, and the nature of the vascular changes was compared with controls provided...Full Text Available
The strength, stiffness, and range of single-stranded stainless steel (SS) and superelastic nickel-titanium (NiTi) archwires were compared with those of alternative leveling products, including nylon-coated and multistranded wires. Wire cross-sections were photographed after being potted in polymer, ground, and polished. Because the rectangular wires had rounded or beveled corners, gravimetric measurements and specific gravity calculations quantified the actual polygonal cross-sectional areas versus the ideal rectangular cross-sectional areas. Beveling reduced the cross-sectional areas by 7% to 8%; this decreased the wire stiffnesses by 15% to 19%. Using a testing machine, we measured the yield strengths, the elastic limits, and the ultimate tensile strengths in tension, and wire stiffnesses in 3-point bending. From cyclic loading tests, the elastic limits of the superelastic NiTi wires were approximately 90% and 45% of their ultimate tensile ...
The objective of the investigation was to study the feasibility of applying continuous casting steel 100Cr6 (SAE 52100) for bearing balls. It was found that two of three continuous casted steel batches have longer or at least similar rolling contact fatigue lifetimes compared to one ingot casted batch. For one of the continuous casted batches, the rolling contact fatigue lifetime was 30% less. The micro- and macrostructure and the residual stresses below the surface of the balls were comparable. There is also no obvious difference between the four batches in the metallurgical parameters like contents of oxygen, titanium and sulfur as well as in the distribution of carbides and their network. The reason for the shorter lifetime of one batch finally was found to be due not to the continuous casting process itself. There was a difference in the cross section of the different casting moulds, and by this in the speed of solidification. As a consequence an increased ...
This is the final report of a three year DOE funded project titled ''A real-time coal content/ore grade (C{sub 2}OG) sensor''. The sensor, which is based on hyperspectral imaging technology, was designed to give a machine vision assay of ore or coal. Sensors were designed and built at Resonon, Inc., and then deployed at the Stillwater Mining Company core room in southcentral Montana for analyzing platinum/palladium ore and at the Montana Tech Spectroscopy Lab for analyzing coal and other materials. The Stillwater sensor imaged 91' of core and analyzed this data for surface sulfides which are considered to be pathfinder minerals for platinum/palladium at this mine. Our results indicate that the sensor could deliver a relative ore grade provided tool markings and iron oxidation were kept to a minimum. Coal, talc, and titanium sponge samples were also imaged and analyzed for content and grade with ...
Statement of problem Computer-aided design/computer-aided manufacturing (CAD/CAM) titanium ceramic restorations were developed with the potential for replacing expensive, high noble metal ceramic restorations. However, there is a lack of information about the clinical performance of CAD/CAM titanium ceramic single crowns. Purpose The purpose of this study was to evaluate CAD/CAM titanium ceramic single crowns after 3 years in function. Material and methods A total of 41 crowns were fabricated for 21 patients. The titanium copings were CAD/CAM milled (Everest CAD/CAM system) with an even thickness of 0.5 mm, and low-fusing veneering porcelain (Vita Titanium Porcelain) was added incrementally. The crowns were cemented using zinc phosphate cement after confirming that there were no mechanical...
This article considers the fundamentals of what happens in asolid when it is impacted with a medium energy gallium ion. The study ofthe ion/sample interaction at the nanometer scale is applicable to mostfocused ion beam (FIB) based work even if the FIB/sample interaction isonly a step in the process, e.g., micromachining or microelectronicdevice processing. Whereas the objective in other articles in this issueis to use the FIB tool to characterize a material or to machine a deviceor transmission electron microscopy (TEM) sample, the goal of the FIB inthis article is to have the FIB/sample interaction itself become theproduct. To that end, the FIB/sample interaction is considered in threecategories according to geometry: below, at, and above the surface.First, the FIB ions can penetrate the top atom layer(s) and interactbelow the surface. Ion implantation and ion damage on flat surfaces havebeen comprehensively examined; however, FIB ...
The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).
The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).
A virtual balancing axis arrangement is described for multi-cylinder reciprocating piston machines for effectively balancing out imbalanced forces and minimizing residual imbalance moments acting on the crankshaft of such machines without requiring the use of additional parallel-arrayed balancing shafts or complex and expensive gear arrangements. The novel virtual balancing axis arrangement is capable of being designed into multi-cylinder reciprocating piston and crankshaft machines for substantially reducing vibrations induced during operation of such machines with only minimal number of additional component parts. Some of the required component parts may be available from parts already required for operation of auxiliary equipment, such as oil and water pumps used in certain types of reciprocating piston and crankshaft machine so that by appropriate location and dimensioning in ...
Statement of problem Porcelain fracture associated with an implant-supported, metal ceramic crown or fixed partial denture occurs at a higher rate than in tooth-supported restorations, according to the literature. Implant-specific and patient-specific causes of ceramic failure have not been fully evaluated. Purpose The purpose of this retrospective study was to evaluate the potential statistical predictors for porcelain fracture of implant-supported, metal ceramic restorations. Material and Methods Over a 6-month period, a consecutive series of patients having previously received implant-supported, metal ceramic fixed restorations were examined during periodic recall appointments. The number of supporting implants, number of dental units, type of restoration, date of prosthesis insertion, ...
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).
The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted ...
The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si"2"+, 1.0-MeV He"+ and 340-keV H"+) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. ...
Probabilistic sensitivities using the score function method are developed for a lifing analysis of an alpha + beta titanium alloy in a round bar under axial fatigue load. Sensitivities with respect to the statistical inputs of the crack initiation size (a...
A novel reactor combining a flame-deposited nanostructured titanium dioxide film and a set of embedded ceramic electrodes was designed, developed and tested for degradation of methyl tert-butyl ether (MTBE) in water. On applying a voltage to the ceramic electrodes, a surface coro...
Quantitative metallography is often used to confirm the proper processing of aerospace metallic materials. A microstructural feature of great importance for titanium alloys processed in the alpha-beta phase field is the volume fraction of primary alpha. S...
High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.
17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.
17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.
Some results on mechanical property study of copper and titanium subjected to impact load and next to neutron irradiation are presented. It was shown that shock wave influence involves a substantial shape change of the stress-strain diagram and of respective mechanical characteristics. Yield- and ultimate strength were substantially increased, as well as hardness with a considerable drop of plasticity. Also a heat stability of copper and titanium specimens was studied after being treated with shock-waves and neutron radiation. Results are given of electron microscope study of titanium structure sfter explosion hardening, which caused decomposition of hydride segregations in titanium and increased dislocation density.
The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness
A number of alloys of zirconium have been investigated as part of a program aimed at improving the high-temperature tensile and creep strength of zirconium. These alloys include aluminum, beryllium, lead, magnesium, molybdenum, niobium, tantalum, tin, titanium, tungsten, vanadium, and zinc, binary and ternary alloys. The data indicate that aluminum, lead, molybdenum niobium, tin, titanium, tungsten, and vanadium can be used successfully to harden zirconium, and that aluminum, tin, titanium, and vanadium are particularly effective in maintaining the strength of zirconium at elevated temperatures.
On the basis of symmetry way of texture description a calculation method of elastic moduli of two-phase titanium alloys with rolling texture has been suggested. Efficiency of the calculation formulas is checked by comparing the calculation results of Young modulus anisotropy in the sheet plane of (#alpha#+#beta#)-titanium alloy VT23 with the experimental data.
A beta titanium alloy was evaluated for use in orthodontic appliances. Standard mechanical tests and aspecially designed spring test were used. Two particular thermo-mechanical treatments resulted in titanium springs with 1.8 times the extension of comparable stainless steel springs, and a 2.2 fold reduction in force per unit displacement. PMID:283089
Austenitic stainless steels have been implanted with molybdenum ions (Mo[sup +], 100 keV, 2.5 x 10[sup 16] atoms cm[sup -2]). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of [approx] 1000 A with a maximum molybdenum concentration of [approx] 9 at.% Mo located at [approx] 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H[sub 2]SO[sub 4] have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted ...
Austenitic stainless steels have been implanted with molybdenum ions (Mo"+, 100 keV, 2.5 x 10"1"6 atoms cm"-"2). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of #approx# 1000 A with a maximum molybdenum concentration of #approx# 9 at.% Mo located at #approx# 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H_2SO_4 have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and ...
A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...
A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...
This work is concerned with the development and application of ion implantation techniques for improving the corrosion resistance of zircaloy-4. The corrosion resistance in nitrogen implanted zircaloy-4 under a 120 keV nitrogen ion beam at an ion dose of 3 x 10"1"7 cm"-"2 depends on the implantation temperature. The characteristics of surface oxidation and corrosion resistance were analyzed with the change of implantation temperature. It is shown that as implantation temperature rises from 100 to 724 C, the colour of specimen surface changes from its original colour to light yellow at 100 C, golden at 175 C, pink at 300 C, blue at 440 C and dark blue at 550 C. As the implantation temperature goes above 640 C, the colour of surface changes to light black, and the surface becomes a little rough. The corrosion resistance of zircaloy-4 implanted ...
Nowadays there are many sun-protection cosmetics incorporating organic or inorganic UV filters as active ingredients. Chemically stable inorganic sunscreen agents, usually metal oxides, are widely employed in high-SPF (sun protection factor) products. Titanium dioxide is one of the most frequently used inorganic UV filters. It has been used as a pigment for a long period of cosmetic history. With the development of micronization techniques, it has become possible to incorporate titanium dioxide in sunscreen formulations without the previous whitening effect, and hence its use in cosmetics has become an important research topic. However, there are very few works related to quantitation of titanium dioxide in sunscreen products. In this research, we analysed the amounts of titanium dioxide i...
A set of materials property data for potential wear resistant materials was collected. These materials are designated for use as the ''core'' materials in the Fibrous Monolith structure. The material properties of hardness, toughness, thermal conductivity and cost were selected as determining factors for material choice. Data for these four properties were normalized, and weighting factors were assigned for each property to establish priority and evaluate the effects of priority fluctuation. Materials were then given a score based on the normalized parameters and weighting values. Using the initial estimates for parameter priority, the highest ranking material was tungsten carbide, with diamond as the second ranked material. Several materials were included in the trade study, and five were selected as promising ''core'' materials to include in this effort. These materials are tungsten carbide, diamond, boron ...
Machine-to-machine (M2M) communications is a new and rapidly developing technology for large-scale networking of devices without dependence on human interaction. Energy efficiency is one of the important design objectives for machine-to-machine network architectures that often contain multi-hop wireless subnetworks. Constructing energy-efficient routes for sending data through such networks is important not only for the longevity of the nodes which typically depend on battery energy, but also for achieving an environmentally friendly system design overall, which will be imperative as M2M networks scale in number of nodes as projected. The objective of this survey is to provide a comprehensive look into shortest-path based energy-efficient routing alternatives to provide a reference for sys...
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated ...
The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)
Proposal for the award of a contract, without competitive tendering, for the replacement of lift machine room equipment and the installation of remote monitoring systems
A 12-month program was conducted to advance the technology of the Electrical Discharge Machining (EDM) process to be applicable to the stringent requirements of gun barrel boring and rifling. The type of barrels employed in the test were .220 swift gun ba...
BackgroundModern metal-on-metal hip resurfacing implants are being increasingly used for young and active patients, although the long-term outcome and failure mechanisms of these...Full Text Available
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV ...
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant ...
In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of ...
Experienced users of the Clarion cochlear implant were tested acutely with the HiResolution (HiRes) and HiRes Fidelity120 (F120) processing strategies. Three psychophysically-based tests were...Full Text Available
Combining in situ Rutherford backscattering and electrical transport measurements on low-temperature hydrogen-implanted amorphous Pd/sub 80/Si/sub 20/ films, we have studied the correlation between the hydrogen content and the resistivity.
BackgroundThe aim of this study is to examine how clinicians and patients negotiate clinical need and treatment decisions within a context of finite resources. Dental implant treatment...Full Text Available
Nowadays, percutaneous pulmonary valve implantation is a successful alternative to surgery for patients requiring treatment of pulmonary valve dysfunction. However, owing to the wide variety of implantation...Full Text Available
The latest-generation cochlear implant devices provide many deaf patients with good speech recognition in quiet listening conditions. However, speech recognition deteriorates rapidly as the level of...Full Text Available
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV ...
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si ...
The effect of feedback and materials on perceptual learning was examined in normal hearing listeners exposed to cochlear implant simulations. Generalization was most robust when feedback paired...Full Text Available
BackgroundOne-stage implant placement has clinically acceptable treatment outcomes. Among other advantages, it may allow investigation of early wound healing. The...Full Text Available
The temporal fine structure (TFS) of sound contributes significantly to the perception of music and speech in noise. The evaluation of new strategies to improve TFS delivery in cochlear implants (CIs)...Full Text Available
Although collagen-containing implants are widely used in various surgical applications, there has been relatively little attention paid to the possibility that this type of biomaterial may undergo pathologic...Full Text Available
After each archwire was ligated into a bracket with a 0.010-in stainless steel wire, both stainless steel and beta-titanium archwires (0.017- x 0.025-in) were slid through commercially pure titanium brackets (0.018-in slot size) at 34 degrees C in both the dry and wet conditions. As controls, stainless steel archwire versus stainless steel bracket couples were used with comparable dimensions. The drawing forces were measured at 5 angulations (0 degrees, 3 degrees, 7 degrees, 9 degrees, and 11 degrees ) for 5 normal forces (nominally 0.2, 0.4, 0.6, 0.8, and 1.0 kg). Regression lines were determined for each frictional couple (P <.05). In the passive configuration, the kinetic frictional coefficients of control and test couples in the dry condition were comparable to previously reported values at 0.11 +/- 0.01 for stainless steel versus stainless steel, 0.12 +/- 0.00 for stainless steel versus titanium, and 0.26 +/- 0.02 ...
In the last two years, the VDMA work group 'Functional security' compiled a qualitative and quantitative procedure for the determination and evaluation of turbo-machine specific risks. With the calibrated risk graph for turbo-machines the requirements (Safety Integrity Level SIL) to the protective functions for turbo-machines (steam turbines, gas turbines, generators and compressors) were determined. With consideration of the legislation, the work group compiled a recommendation for the renewal and/or reconstruction of protective functions with old facilities.
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.
The theoretical alignment limit for focused ion beam (FIB) implantation was deduced from the calculated resolution for the detection of an alignment mark. The alignment resolution varies with the signal to noise ratio and there is an optimum current which gives the best resolution. The alignment resolution epsilon/sub sigma/ is approximately 0.006 ..mu..m for a 160 keV Si/sup ++/ beam from our FIB implanter. The measured alignment error is approximately 0.06 ..mu..m and the main reason of this discrepancy is vibration. The ultimate limit on the alignment error can be reached through improvements in the implanter system.
The author gives an account of tests with the X-phone system. The aim of the tests was to establish the reliability and behaviour of the apparatus mounted on a winning machine and to investigate the possibility of setting up a radio link, without laying an extra wire, between the foot of the tubbing-lined roadway and the winning machine on a steep face. The author describes the face and the test conditions and presents details of the satisfactory test results.
Papers are presented under the session headings: research in mechanical fragmentation; rock characterization, remote sensing and interface detection; monitoring, data transmission and communications; tunnel boring machines; minewide monitoring and expert systems for ground control; machine guidance; shaft and raise boring; automation of drilling equipment; machine automation and control; new developments in mechanical miners; materials handling; innovative mining systems; general minewide monitoring and expert systems; ground support; human factors; and extraterrestrial mining.
... Longer residence times attain finer grinds while shorter residence times attain higher outputs. Accordingly, the ATTOMILL can be set up to achieve optimum efficiency for individ ual applications. VENDOR INFORMATION: Peterson Machine Inc. www.microgrind.com/peterson/tech.htm Peterson Machine Inc. (formally Peterson North) was created under D. Peterson Machine & Fabrication Ltd. in 1994 after two years of successful ...
Processes were developed that use lasers as manufacturing tools. These processes were stripping of insulation from cables and wires, machining of quartz, microdrilling and welding of reflective metals, and precision alignment of curved surfaces before machining. A technological basis also was formed which resulted in a process for automatic surface inspection of parts and aided development of machining processes for Kevlar parts.
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
In this article carbon co-implantation and step-by-step thermal treatments of shallow p"+-n-junctions formation were used with the purpose of extended defect suppression and reduction of boron transient enhanced diffusion. A substantial improvement of the structural and electrical parameters of shallow p"+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)
The project is devoted to the development of novel insoluble anodes for copper electrowinning and electrolytic manganese dioxide (EMD) production. The anodes are made of titanium-lead composite material produced by techniques of powder metallurgy, compaction of titanium powder, sintering and subsequent lead infiltration. The titanium-lead anode combines beneficial electrochemical behavior of a lead anode with high mechanical properties and corrosion resistance of a titanium anode. In the titanium-lead anode, the titanium stabilizes the lead, preventing it from spalling, and the lead sheathes the titanium, protecting it from passivation. Interconnections between manufacturing process, structure, composition and properties of the titanium-lead composite material were investigated. The material containing 20-30 vol.% of ...
By the methods of microstructural and electron-microscopic analyses by the tension test and impact test studied is the effect of quenching conditions on structure and mechanical properties of the TS6 titanium-#beta# alloy. It is shown that low temperature quenching from 700 deg C, recommended earlier for analogous VT15 titanium alloy, leads to appearence of intercrystalline fracture and to sharp decrease of impact strength of the TS6 alloy. Established are optimum conditions for quenching of half-finished products and articles of the TS6 alloy depending on their subsequent working or operation.
The methods of optical and transmission electron microscopy were used to study the influence of different programmes of hot deformation on the structure formation of (#alpha#+#beta#) titanium alloy VT9. The #beta# alloy VT-15 was studied at the same time in order to simulate the dislocation structure generated in the process of hot deformation. During the hot deformation of two-phase titanium alloys in both #beta# and (#alpha#+#beta#) ranges there is found to be an optimum range of deformation in which a homogeneous, polygonized structure is formed.
The feasibility of the anodic protection of titanium evaporators in Al[sub 2](SO[sub 4])[sub 3] solution was studied by the measurement of polarization curves, weight loss, solubility of passive film and AC impedance. The protection parameters and efficiency were determined. In addition, the practical technology of anodic protection was studied by screening reference electrodes and auxiliary cathodes. Throwing power was also measured. Four rows of tube-type evaporators of titanium have been anodically protected in situ. Field tests lasting more than one year shows satisfactory results. (orig.)
The introduction of numerical control (NC) machine tools has made it possible to automate machining in series and small series production. The organization of automated production sections merged NC machine tools with automated transport systems. However, both the one and the other require the presence of an operative at the machine for low skilled operations. Industrial robots perform a number of auxiliary operations, such as equipment loading-unloading and control, changing cutting and auxiliary tools, controlling workpieces and parts, and cleaning of location surfaces. When used with a group of equipment they perform transfer operations between the machine tools. Industrial robots eliminate the need for workers to form auxiliary operations. This underscores the importance of developing robotized manufacturing centers providing for minimal human participation in production and ...
The objective of this project is to investigate the applicability of a combined Global Positioning System and Inertial Measurement Unit (GPS/IMU) for information based displays on earthmoving machines and for automated earthmoving machines in the future. This technology has the potential of allowing an information-based product like Caterpillar's Computer Aided Earthmoving System (CAES) to operate in areas with satellite shading. Satellite shading is an issue in open pit mining because machines are routinely required to operate close to high walls, which reduces significantly the amount of the visible sky to the GPS antenna mounted on the machine. An inertial measurement unit is a product, which provides data for the calculation of position based on sensing accelerations and rotation rates of the machine's rigid body. When this information is coupled with GPS it ...
According to the development of power electronic element (GTO, IGBT) nd material for electrical machines (permanent magnet, super conductor), the technology for electrical machines is now a day rapidly developing. here with, a novel electrical machine, based on the new conception of transverse flux configuration leads to a considerable increase in power density and enables simultaneously high efficiency.The transverse flux machine with PM excitation will be applied to gearless direct drives for railway traction system. The designed and measured performance of transverse machine for railway traction system revealed a great potential of system improvements to reduce linear motor mass. (author). 10 refs., 14 figs., 3 tabs.
We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.
Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)
P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.
A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows ...
It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.
A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting ...
In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.
The colonization of an implant surface by bacteria is an extremely important medical problem, which often leads to the failure of medical devices. Modern surface modification techniques, such as ion implantation, can confer to the surfaces very different properties from those of the bulk underlying material. In this work, austenitic stainless steel 316 LVM has been superficially modified by Si^+ ion implantation. The effect of surface modification on the biocompatibility and bacterial adhesion to 316 LVM stainless steel has been investigated. To this aim, human mesenchymal stem cells (hMSCs), as precursor of osteoblastic cells, and bacterial strains relevant in infections related to orthopedic implants, i.e., Staphylococcus aureus and Staphylococcus epidermidis, have been assayed. For the ...
Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)
Titanium base 'alpha'-alloys (Pt-7M, RK-20 and Ti-5Al-2Zr-1.5V) are considered for their behaviour under neutron irradiation. The role of alloying elements in radiation hardening is discussed depending of neutron fluence and irradiation temperature. For PK-20 alloy three stages of change in mechanical properties are revealed which are following: incubation period and weak hardening, intense radiation hardening, radiation hardening attenuation. Irradiation temperature rise results in an increase of incubation period and threshold neutron fluence. A special attention is paid to hydrogen absorption in #alpha#-titanium alloys under irradiation. It is concluded that titanium base 'alpha'-alloys are serviceable as structural materials in nuclear plants with allowance made for peculiar features of their radiation behaviour. 4 refs.; 7 figs.; 1 tab.
... information about, utilized, or discussed these subjects: basic topics: overview materials and material types: ti-6al-4v, ti1100, ti17 , ti6242, imi 550 ...
Corrosion tests of titanium alloys VTI-0, OT4, VT5-1 and steel Kh18N1OT in 10% and 18% HCl with additions of carnallite at 40 deg C have been carried out. It has been established that titanium alloys in 10% and 18% HCl containing 5 and 10% carnallite are sufficiently corrosion resistant in the presence of 0.1-1% FeCl or HNO_3 and can be used for manufacturing the equipment of recirculation gas scrubbers. Steel Kh18N10T is unstable in all the media tested. It is subjected to intensive pitting. Specimens of steel Kh18N10T have also revealed edge cracking.
Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H{sub 2}SO{sub 4}). Alloys with two nitrogen doses have been prepared (2.5x10{sup 16} and 2x10{sup 17} N atoms/cm{sup 2}). The implanted alloys have been characterized by {sup 15}N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen ...
Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H_2SO_4). Alloys with two nitrogen doses have been prepared (2.5x10"1"6 and 2x10"1"7 N atoms/cm"2). The implanted alloys have been characterized by "1"5N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical ...
As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 ...
We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation ...
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...
The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si{sup +}, 1 {times} 10{sup 16}/cm{sup 2}, implant. A 4{times} larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10{times} smaller diffusion relative to markers without the MeV Si{sup +} implant. This data demonstrates that a 2 MeV Si{sup +} implant injects vacancies into the near ...
A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, ...
Aqueous solutions (mixed waste) generated from various LLNL operations, such as debris washing, sample preparation and analysis, and equipment maintenance and cleanout, were combined for storage in the B695 tank farm. Prior to combination the individual waste streams had different codes depending on the particular generating process and waste characteristics. The largest streams were CWC 132, 791, 134, 792. Several smaller waste streams were also included. This combined waste stream was treated at LLNL's waste treatment facility using a vacuum filtration and cool vapor evaporation process in preparation for discharge to sanitary sewer. Prior to discharge, the treated waste stream was sampled and the results were reviewed by LLNL's water monitoring specialists. The treated solution was discharged following confirmation that it met the discharge criteria. A major source, accounting for 50% for this waste stream, is metal machining, cutting and ...
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of ...
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from ...
The threshold stress itensities for stress corrosion crack propagation in beta titanium alloy 38-6-44, Ti-3Al-8V-6Cr-4Mo-4Zr, has been determined in salt water and methanolic solutions. The alloy was immune to stress corrosion cracking in aqueous sodium c...
The influence of heat treatment on the structure, mechanical properties and fracture peculiarities of high-strength (#alpha#+#beta#)-titanium alloy VT22 has been studied. It is ascertained that thermal cycling and subsequent high-temperature aging permit to reduce considerably crack growth rate. Thermal cycling is realized in the following mode: heating in #beta#-region, cooling and allowance in (#alpha#+#beta#)-region, heating in #beta#-region.
Beta C trademark, a metastable beta titanium alloy developed by RMI Titanium Company, continues to be used in new applications due to its excellent mechanical properties and resistance to corrosion. New data in this paper include mechanical properties in large sections, cold drawn bar and welds. Fatigue crack growth and corrosion data are added to supplement previously published data.
VT6 titanium alloy long-range fibers have been extracted from the suspended melt drop with the following high-rate solidification. Formation of the structure of fibrous porous material prepared from these fibers has been studied. 7 refs.; 5 figs.; 2 tabs.
The physical methods were used to study the decomposition of a metastable #beta#-solid solution in the VT22 two-phase titanium alloy. It is shown that the martensitic #beta# #-># #alpha#'' transformation in doped-element depleted microvolumes of the #beta#-solid solution are dominanted and the long-time multistage decomposition through a number of intermediate states in others.
The influence of structure on mechanical properties in the course of tensile tests in a wide range of temperatures was studied, using the VT16 structure thermally strengthened (alpha+beta)-titanium alloy by way of example. It is ascertained that transition from ductile to brittle fracture at the temperature of -196 deg C is observed only in coarse-grain alloy having alpha-eldging of beta grains.
The relationships of hydrogen alloyed #beta#-titanium alloy deformation behaviour to its microstructure and texture are investigated. It is shown that plasticity increases and strain induced texture changes at low hydrogen contents (0.1-0.2 mass %). Possible mechanisms responsible for specific features of #beta#-Ti alloy deformation are discussed. The study is made using alloy VT35 doped with hydrogen
Effect of cooling rates within the wide range (0.003-45 grad/s) on the complex of mechanical properties of (#alpha#-#beta#)-titanium alloy VT3-1 is studied in the process of heat treatment. Cooling conditions of semifinished product made of this alloy with a different structure providing optimum combination of strength, ductility fracture toughness, heat resistance, and endurance are determined.
Peculiarities of metastable #beta#-solid solution decmposition in titanium alloy VT30 in the process of isothermal ageing in the range 500-650 deg C are investigated. Using the methods of transmittion electron microscopy, X-ray diffraction analysis, etc., it is shown that in the case of alloy quenching from the temperature below the point of complete polymorphous transformation (T_t_._t_.), as well as after warm rolling the course of subsequent decomposition of solid solution can be consierably complicated.
The effects of fluoride on the corrosion behavior of Titanium Grade 7 (0.12-0.25% Pd) have been investigated. Up to 0.1 mol/L fluoride was added to the NaCl brines at 95oC, and three pH values of 4, 8, and 11 were selected for studying pH dependence of fl...
This study prospectively assessed the outcome of 134 cemented titanium stems and serum ion levels. The stems were polished (0.1 μm Ra) with circular cross section. At the end point,...Full Text Available
An energy dispersive x-ray fluorescence technique was used for the determination of Titanium (Ti) and Zirconium (Zr) in red mud by using a standard addition method. An annular {sup 241}Am source is employed for excitation of K shells of elements. 13 refs., 2 figs., 1 tab.
Slurry aluminizing is one method of protecting titanium alloys and intermetallics at temperatures at which oxidation would otherwise significantly degrade mechanical properties. The technique produces a continuous layer of alumina-forming TiAl_3 on exposed surfaces. The influence of composition, film thickness, and diffusion temperature upon the oxidation resistance of these slurry aluminides was studied in cyclic tests to 816degC (1500deg F). Degradation of slurry aluminized #beta#-titanium alloy and #alpha#-Z titanium aluminide intermetallic occurs by localized oxidation at cracks in the coating layer. These cracks are probably due to mismatch of coefficients of thermal expansion between the coatings and substrates. Addition of silicon to the slurry modifies the oxidation behaviour around a crack by introducing a continuous layer of titanium silicide at the boundary of the aluminide coating and ...
The papers contained in this volume provide an overview of recent theoretical and experimental research related to the fracture toughness and fatigue crack growth characteristics of titanium alloys. Topics discussed include room temperature fatigue crack propagation in beta-titanium alloys, fatigue crack growth rate acceleration in alpha+beta Ti alloys, influence of transformed beta microstructures on fatigue crack growth rates in Ti-6Al-4V, and the role of inclusion and pore content on the fracture toughness of powder processed blended elemental Ti-10V-2Fe-3Al. Papers are also presented on fatigue crack growth measurements in an alpha-beta titanium alloy, the effects of thermal processing variation on the properties of Ti-6Al-4V, and the effect of microstructure on ductility and fracture toughness of alpha+beta titanium alloys.
Automatic weapons such as machine guns and submachine guns are found in the German-speaking region only in special army and police units and appear accordingly rarely in homicides, suicides and accidents. In the following, the findings in two cases of death with the use of machine and submachine guns are presented. The first case was a fatal accident during shooting on a training area (current machine gun of the German army, calibre 7.62 x 51 mm), the second case was a killing during a physical conflict (submachine gun MP 40 from World War II, calibre 9 x 19 mm). In the case with the machine gun autopsy disclosed typical entry holes corresponding to the calibre, but unusually large exit wounds with tissue bridges in the wound ground, measuring 4 x 2.5 cm in diameter. By contrast, the second case (submachine gun) showed "normal" entry and exit wounds. The differences are mainly caused by deviating ...
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which ...
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which ...
Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are ...
Downregulation of anterior pituitary GnRH-receptors by application of a slow release GnRH-implant offers an effective and reversible alternative to surgical castration of the male dog. Aim of the present study was to test the efficacy and the underlying mechanisms of a new non-biodegradable controlled-release device implant (Gonazon, Intervet, containing 18.5mg of the GnRH-agonist Azagly-Nafarelin). Eight male beagle dogs were implanted s.c. at the para-umbilical region. In four dogs implant removal was after 180 days (group 1), in the other four dogs after 365 days (group 2). Eleven weeks after implantation availability of LH was reduced (p<0.0001) by 70%. After an initial increase lasting for about 4 days, testosterone (T) and estradiol (E2) concentrations decreased (p<0.0001) to basal l...
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here ...
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of ...
Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film ...
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion ...
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of ...
Bone matrix gelatin, prepared by sequential chemical treatment including decalcification with 0.6 N hydrochloric acid [9], was used as an alloimplant for the treatment of benign bone tumours, tumorous conditions of bone, acetabular dysplasia, delayed union, traumatic bone defects and other disorders. The bone matrix gelatin implanted into bone defects was incorporated successfully in 98% of implantations, excluding cases of infection, tumour recurrence and recurrence of tumorous conditions. The material was also implanted into ten bone sites as an onlay but in five it was resorbed without new bone formation. The incorporation of the bone matrix gelatin into the recipient bed was completed from 6 to 33 months (average 14.9 months) after implantation. Wound infection complicated 5 of 165 implantations (3%) in previously uninfected sites. Low grade fever persisting after the tenth ...
The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to ...
The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature ...
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated ...
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.
As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work ...
The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged ...
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation ...
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time ...
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model ...
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has ...
Ferrography is a technique for isolating wear particle debris from lubricating and hydraulic oils, the presence of which carry with them a history of the wear processes in the machine. Thus, the technique has fundamental applications in machine condition monitoring and failure prevention. The wear particles are significant in the metal types that are present in the particle distribution as an indication of the wearing machine components and in the particle size distribution and morphology which indicates the severity of wear in the system. In this paper, the fundamental principles which describe the working of the ferrograph, concentrating on the working of the on-line ferrograph are discussed. The significance of equilibrium particle concentration in the oil system and its measurement using the ferrograph are also discussed.
More efficient and safe production machines are required for sod peat production. The efficiency and durability of machines is especially important in contract work. Two sod peat harvester types, Pala-14 and Turve-Unsa, were tested by the forest department of the Work Efficiency Associationin summer 1986. Sod peat was collected with these machines at three sod peat production sites. The yield of the Pala-14 harvester was 121 m/sup 3//h for harvesting time, and 56 m/sup 3//h for worksite time, and that of Turve-Unsa was 108 m/sup 3//h and 55 m/sup 3//h, respectively.
Gallium liquid-metal ion sources that have been introduced in the late 1970s have allowed the development of a new class of micro- and nanofabrication tools collectively denominated as focused ion beam (FIB) machines. To investigate the potential of a helium beam in such a FIB instrument the authors have tested a room-temperature electron beam ion trap coupled with a high resolution FIB machine. In this letter they present their first results in target imaging using a helium beam with a resolution that allows to account for a beam diameter in the submicrometer range.
The whole computer hardware industry embraced multicores. For these machines, the extreme optimisation of sequential algorithms is no longer sufficient to squeeze the real machine power, which can be only exploited via thread-level parallelism. Decision tree algorithms exhibit natural concurrency that makes them suitable to be parallelised. This paper presents an approach for easy-yet-efficient porting of an implementation of the C4.5 algorithm on multicores. The parallel porting requires minimal changes to the original sequential code, and it is able to exploit up to 7X speedup on an Intel dual-quad core machine.
A gelcasting composition has improved drying behavior, machinability and shelf life in the dried and unfired state. The composition includes an inorganic powder, solvent, monomer system soluble in the solvent, an initiator system for polymerizing the monomer system, and a plasticizer soluble in the solvent. Dispersants and other processing aides to control slurry properties can be added. The plasticizer imparts an ability to dry thick section parts, to store samples in the dried state without cracking under conditions of varying relative humidity, and to machine dry gelcast parts without cracking or chipping. A method of making gelcast parts is also disclosed.
Surface quality is one of the most important criteria for establishing the optimum cutting parameters needed to perform a machining process. Usually, the evaluation of the degree of the surface finishing requires to apply metrological techniques which involve times out in the production. As a consequence of this, a loss in both the economy of the process and the fiability of the tests reproducibility can be produced. In this work a relation between cutting force and surface roughness has been studied for the turning process of an Al-Cu alloy. From this relation, the surface quality of the machined samples can be evaluated by using the cutting forces values acquired during the cutting process. (Author) 8 refs.
The Wind Energy Division at Sandia National Laboratories recently completed a point design based on the 34-m Vertical Axis Wind Turbine (VAWT) Test Bed. The 34-m Test Bed research machine incorporates several innovations that improve Darrieus technology, including increased energy production, over previous machines. The point design differs minimally from the Test Bed; but by removing research-related items, its estimated cost is substantially reduced. The point design is a first step towards a Test-Bed-based commercial machine that would be competitive with conventional sources of power in the mid-1990s.
The penetration depth and concentration distribution for vanadium ions with low energy implanted into the dry peanut seeds is determined by scanning electron microscope and X-ray energy dispersion spectrometer. The results show that the depth-concentration distribution is a Gaussian distribution with a long tail and the maximum penetration depth is about 13.6 #mu#m for V"+ with 200 keV in cotyledon of the peanut. The experimental result of the implanted V"+ range in the peanut seeds is compared with the calculating value of the TRIM95
Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.
This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.
The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
A simple method allowing easy calculation of the spatial damage energy distributions for ion-implanted materials is presented. The direct procedure takes account of the variation with depth of the lateral spreading of implanted ions, as well as the effects of energy transport by the recoiling target atoms. The subsequent computer program LUPIN-3D provides three-dimensional damage distributions and allows the construction of damage energy mappings. Various substrates of technological interest are investigated and several fields of application of the calculation are envisaged. The density of cascades can therefore be determined and heterogeneous amorphization models can be implemented. (orig.).
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This paper deals with an experimental study of ultra-precision diamond cutting of magnesium alloy (AZ31). In order to investigate the machinability such as the cutting force and the surface integrity and understand the problems in a micro cutting, the experiments on the diamond cutting of magnesium alloy and pure aluminum with an ultra-precision turning machine has been carried out. The machinability of magnesium alloy was compared with that of pure aluminum and discussed. Consequently, both the thrust force component and the surface roughness obtained by cutting of magnesium alloy became larger than that of pure aluminum. It was also found that the inclusions or the defects in the work material caused to generate the scratches on the finished surface and influenced the integrity of mirror surface. (orig.)
Officials of Saturn Machine and Welding Co., describe the company's designs of oven door, door cleaner and jamb cleaner and report performance at US coking plants.
... non- emissive guidance and collision alert, automated transport in dynamic environments, and assembly and inspection. Foveal Vision, Autonomous Agents, ...
Privacy-preserving machine learning algorithms are crucial for the increasingly common setting in which personal data, such as medical or financial records, are analyzed. We provide general...Full Text Available
In this project, graphite is used as a substitute for lead in order to maintain the machinability of plumbing components at the level of leaded brass. Graphite dispersed in Cu alloy was observed to impart good machinability and reduce the sizes of chips during machining of plumbing components in a manner similar to lead. Copper alloys containing dispersed graphite particles could be successfully cast in several plumbing fixtures which exhibited acceptable corrosion rate, solderability, platability, and pressure tightness. The power consumption for machining of composites was also lower than that of the matrix alloy. In addition, centrifugally cast copper alloy cylinders containing graphite particles were successfully made. These cylinders can therefore be used for bearing applications, as substitutes for lead-containing copper alloys. The results indicate that copper graphite alloys developed under this ...
Zirconia-based restorations are widely used in prosthetic dentistry; however, their susceptibility to hydrothermal degradation remains elusive. We hypothesized that CAD/CAM machining and subsequent...Full Text Available
"Machines of all kinds depend on complex software to keep them operating safely. But how reliable is the software - and how can we be sure it is reliable?" (4 pages)
airborne separation assistance systems (ASAS) to ... operations should be limited to the outer traffic flow ...... AGARD Meeting on Machine Intelligence in Air ...
Electrochemical discharge machining (ECDM) is a promising hybrid process for high-performance machining of non-conductive glass. ECDM drilling has been found to have different characteristics and material removal mechanisms in discharge regime (less than 300??m in depth) and hydrodynamic regime (more than 300??m in depth); however, these regimes are never separately modeled in existing ECDM models, which leads to large prediction error, especially at low applied voltages and high machining depths. Until now, no model is particularly designed for discharge regime, where most material is removed. In this paper, a finite element based model for ECDM drilling in discharge regime is presented. Material removal subjected to a single spark was simulated using finite element method. The drilling d...
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.
The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.
We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.
The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.
The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).
BackgroundThe routine removal of orthopaedic fixation devices after fracture healing remains an issue of debate. There are no evidence-based guidelines on this matter, and little...Full Text Available
The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.
A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.
In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.
of the digital hearing aid technology that led to the cochlear implant. Former. Marshall Space Flight Center engineers. John Richardson and Joseph Howard ...
As to all sinter variations the microradiographic analysis showed that about 86 to 90 % of the implant surface were enclosed split-free with newly formed bone 16 weeks post operationem. A silicat salt addition of the test variation Ap_4_0KS_1_5 and Ap_4_0KS_3_0 did not cause a negative influence on bone regeneration. On the surface of all test implants a double layer was revealed radiologically, consisting of a 30 - 40 #mu#m thick bone near X-ray impermeable area and an X-ray permeable area of maximum 120 #mu#m thickness directed to the nucleus of the implant.
As to all sinter variations the microradiographic analysis showed that about 86 to 90 % of the implant surface were enclosed split-free with newly formed bone 16 weeks post operation. A silicate salt addition of the test variation Ap/sub 40/KS/sub 15/ and Ap/sub 40/KS/sub 30/ did not cause a negative influence on bone regeneration. On the surface of all test implants a double layer was revealed radiologically, consisting of a 30 - 40 ..mu..m thick bone near X-ray impermeable area and an X-ray permeable area of maximum 120 ..mu..m thickness directed to the nucleus of the implant.
Placement of dental implants in the interforaminal region of the edentulous mandible is considered a safe and routine surgical procedure. Hemorrhage in the floor of the mouth has been reported as a rare, potentially life-threatening complication related to the placement of implants in this region. In this case report the authors present an immediate and a delayed case of massive bleeding in the floor of the mouth after implant placement. This highly vascularized region is vulnerable and bleeding can be induced easily by instrumentation, causing a vascular trauma, usually by perforation of lingual periostium. In almost all cases the expanding hematoma formation starts during surgery. The effect of the vasoconstrictive agent in the local anesthesic combined with an injury of the lingual arte...
The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21/sup 0/C +/- 1/sup 0/C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F/sup +/, Ar/sup +/, or As/sup +/ ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10/sup 18/ to 1 x 10/sup 20/ ions/m/sup 2/. The conductivity of films implanted with As/sup +/ was approximately one order greater than those implanted with Ar/sup +/, which in turn was approximately one-half order greater than those implanted with F/sup +/. The conductivity of the most conductive film approx.1 S/m) was almost 14 orders of ...
We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.
We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.
Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x1014 ions cm-2. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm-1 compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced 12C(d,p)13C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It was found that the use of a large cold shield (liquid nitrogen trap) in the ion ...
Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).
Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of carbon impurities.
For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are compared and characterized, using a high resolution SEM and a x-ray diffractometer, respectively. The ...
Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross ...
Fluoroalkyl end-capped vinyltrimethoxysilane oligomer suffered the sol-gel reaction under alkaline conditions in the presence of titanium oxide nanoparticles in tetrahydrofuran to afford the corresponding fluorinated oligomer/titanium oxide nanocomposites[RF-(VM-SiO2)n-RF/TiO2] in excellent to moderate isolated yields. These fluorinated composites thus obtained were nanometer size-controlled fine particles, and exhibited good dispersibility and stability in traditional organic solvents except for water. These fluorinated nanocomposites were applied to the surface modification of glass to exhibit not only a completely superhydrophobic characteristic (a water contact angle: 180degree) with a non-wetting property against water droplets but also a good oleophobicity imparted by fluoroalkyl seg...
We performed hybrid-DFT calculations for La2/3?xLi3xTiO3 (LLT) with lithium ion conductivity, in order to investigate the detailed lithium ion conductive mechanism from the viewpoint of molecular orbital (MO) method. It was concluded that the very ionic lithium ion in bottleneck accelerates the lithium ion conduction. The calculated MO shows no chemical bonding between lithium ion and other ions. In comparison with the perovskite-type trivalent titanium oxide of LaTiO3, the effect of the titanium's reduction was also investigated. We showed the possibility of the high lithium conductivity in LaTiO3.
A thermodynamic analysis of the behaviour of Alloy 800 in helium based atmospheres relevant to the High Temperature Gas Cooled Reactor indicates that, depending upon the precise gas composition, oxidation and carburisation, or carburisation alone may be expected. The prime influence appears to be the moisture level. The morphology and structure of the reaction products are discussed. It is shown that the 'reactive' elements chromium, manganese, titanium and silicon are concentrated in the oxide scale which is normally duplex in structure. Aluminium oxide is formed at grain boundaries and in an internal oxidation zone together with titanium and sometimes silicon. In carburising conditions, mixed titanium-chromium carbides are formed. When this occurs, intergranular penetration is maximised. Weight gain data are assessed and briefly described and a tentative model for the mechanism of corrosion of Alloy 800 in HTR helium is ...
Manual drilling in titanium structures is a tedious and labor-intensive work. To reduce man-hour requirements while concurrently improving hole quality, we developed a robotic drilling system for this application. The lean system contains the product holding fixture, the industrial robot, the end effector, the control and sensor system, and the offline programming. The system functions include locating workpiece with a calibration stick or the vision system, weld mark inspection, one-sided clamping, drilling and reaming hole in material stack combinations of titanium and aluminum, and real-time thrust force feedback. The positional accuracy and the repeatability of the system have successfully been placed within the specification?s 0.3?mm tolerance and 0.2?mm tolerance, respectively. The d...
Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural characteristics.
In order to substitute expensive cast titanium alloys by powder ones the possibility of introduction of powder additions by mechanical stock mixing is studied. It is shown that microstructure of powder alloys of Ti-Zr(1-9%) system is typical for one-phase cast #alpha#-alloys. The Ti-Mo(1-9%) and Ti-Nb(1-9%) system alloys have microstructure typical for two-phase (#alpha#+#beta#)-alloys. For homogeneous structure to be obtained the high temprature annealing is advisable after hot pressing. Alloying with Mo, Zr and Nb permits to increase considerable the strength of powder titanium products (at 9% Mo more than two times).
An inorganic particulate adsorbent of a titania-alumina is described for treating a superheated water containing radioactive materials such as cobalt ions, which is free from release of corrosive impruities, and which has a high adsorption capacity of radioactive materials and a high mechanical strength is prepared by hydrolyzing a titanium alkoxide and an aluminum alkoxide, thereby forming a hydrous titanium oxide and a hydrous aluminum oxide, respectively; precalcining the hydrous titanium oxide and aluminum oxide, mixing and molding the resulting titania and alumina into a particulate mixture thereof having a titania mole fraction of 0.2 to 0.9, and calcining the particulate mixture at 500/sup 0/-700/sup 0/C. This absorbent is effectively used in treat boiling water-type nuclear reactor core-circulating water to remove radioactive substances therefrom.
N-doped TiO2 has been prepared by use of sol?gel systems containing titanium alkoxide, with nitric acid as the nitrogen source. The time needed for gelation of the systems was drastically reduced by ultrasonic irradiation. The peaks assigned to the nitrate and nitrous ions were observed by FT-IR measurement during the sol?gel reaction. The N-doping was confirmed by the observation of N?O peaks in the XPS spectrum of the sample heated at 400??C. The nitrate ion acted as an oxidizer of the ethanol solvent and titanium species. The TiO2 became doped with nitrogen oxide species as a result of reduction of nitrate ion incorporated into the dried gel samples. These results indicated that the added nitric acid was reduced during the sol?gel transition and heating process, and the resulting NO spe...
Titanium diboride was heated to high temperatures using microwaves. The highest temperature obtained was 2245/degree/C. Unfortunately, oxidation was a problem, especially at the higher temperatures, although an argon flush and a carbon getter were used. To completely stop oxidation, the oxygen potential must be below 10/sup /minus/18/ atmospheres. Using an argon flush and a carbon getter, titanium diboride was successfully densified to 82% of theoretical without measurable oxidation by heating with microwaves to 1860/degree/C. Density actually decreased upon reaching temperatures above 1860/degree/C due to void formation adjacent to the surface. Void formation is thought to be due to the formation of B/sub 2/O/sub 3/(g) which evolves rapidly above 1860/degree/C because of the loss of a TiO/sub 2/ protective film which melts at this temperature. 9 refs., 12 figs., 2 tabs.
Asymmetric Incremental Sheet Forming (AISF) is a relatively new manufacturing process. In AISF, a CNC driven forming tool imposes a localized plastic deformation as it moves along the contour of the desired part. Thus, the final shape is obtained by a sequence of localized plastic deformations. AISF is suitable for small series production of sheet metal parts as needed in aeronautical and medical applications. Two main process limits restrict the range of application of AISF in these fields. These are the low geometrical accuracy of parts made from titanium alloys or high strength steels and, for titanium alloys, the limited formability at room temperature. In this paper a new concept for laser-assisted AISF is introduced including the required components. Furthermore, the CAX tools used f...
A LLX procedure for carrier-free separation of the radioisotopes, {sup 47}Sc, {sup 48}V and {sup 48},{sup 49},{sup 51}Cr, the 40 MeV {alpha}-particle activation products of titanium has been developed. Sequential separations of the radionuclides produced in the titanium matrix through the nuclear reactions ({alpha}, {alpha}p{chi}n), ({alpha}, p{chi}n) and {alpha}, ({chi}n) have been performed through LLX from aqueous H{sub 2}SO{sub 4} and HClO{sub 4} acid media using the liquid cation exchanger, HDEHP, as an extractant. Purity of the carrier-free radiotracers at different stages of their separations has been verified by {gamma}-ray spectrometry. (author).
The effect of various hydrogen concentrations on the crystal lattice period and the hardness of titanium alloy was examined, the alloy containing about 16 at.% Mo (27.5 wt. % Mo) and having #beta# structure. The peculiar features of the mechanism of plastic deformation of the alloy were studied after adding hydrogen to it. A dependence of the crystal lattice period on the concentration of hydrogen was obtained for TixMoxH_2 alloy. It has been established that the hardness of the Ti-Mo alloy does not change when hydrogen is added to it. The presence of hydrogen introduces changes into the mechanism of deformation of #beta#-titanium alloy. The configuration of the inverse pole figures after rolling proves that the transverse slip process in an alloy with hydrogen is hampered, and that the coplanar slip process is developing in it.
A study was made into microstructure and texture of cold rolled titanium alloy VT-35 with various hydrogen content aimed to reveal hydrogen influence on the mechanism of cold plastic deformation by rolling. Experiments were carried out using sheets 1.2 mm thick hydrogenated up to hydrogen concentrations from 0.06 to 0.554 mass. %. All specimens constituted a single-phase FCC #beta#-solid solution. It is shown that small hydrogen additions have a plasticizing effect on #beta#-titanium alloys in their cold rolling. The character of texture is dependent on hydrogen concentration and determined by deformation mechanism. 6 refs.; 5 figs.
Statement of problem Titanium is the most biocompatible metal used for dental casting; however, there is concern about its marginal accuracy after porcelain application since this aspect has direct influence on marginal fit. Purpose The purpose of this study was to determine the effect that metal selection and the porcelain firing procedure have on the marginal accuracy of metal ceramic prostheses. Material and methods Cast CP Ti, milled CP Ti, cast Ti-6Al-7Nb, and cast Ni-Cr copings (n=5) were fired with compatible porcelains (Triceram for titanium-based metals and VITA VMK 95 for Ni-Cr alloy). The Ni-Cr alloy fired with its porcelain served as the control. Photographs of metal copings placed on a master die were made. Marginal discrepancy was determined on the photographs using an image ...
TiB{sub 2} appears to be a promising material for the wear protection in various tribological systems, e.g. the diecasting of Al. This study focuses on the development of titanium boride coatings deposited by PACVD, a deposition method which is most suitable for the coating of substrates with complex shapes. All layers analysed are very smooth and exhibit a quasi-amorphous fracture surface. XRD and TEM analysis indicate a nanocrystalline structure with grain sizes in the order of 2 nm. The diffraction patterns can well be correlated to titanium diboride. WDS reveals an over stoichiometric B/Ti ratio. The layer hardness reaches the value of 33 GPa and the critical load in scratch tests rises to 35 N. Neither 100Cr6 nor Al as a counterpart in pin-on-disk tests leads to wear of the coating. (orig.)
A method is described for determination of aluminium, cadmium, cobalt, chromium, copper, calcium, magnesium, sodium, potassium, manganese, nickel, lead, strontium, zinc, titanium and vanadium in iron ore. After dissolution, a 1 gram sample of iron ore is applied to a column of AGI-X8 anion exchange resin (chloride form), in 100 ml of 7M HCl. Aluminium, chromium, calcium, magnesium, sodium, potassium, manganese, nickel, lead, strontium, titanium and vanadium are eluted with 7M HCl; iron, copper and cobalt are eluted with 0.5M HCl; cadmium and zinc are eluted with 2M HNO_3. Iron is subsequently removed from copper and cobalt by a solvent extraction with methyl isobutyl ketone. The elements are determined in the eluates by atomic absorption spectrometry, except for titanium and vanadium, which are determined spectrophotometrically.
The production method of the elastic composite containing ferrous particles and titanium barium particles dispersed in the porous silicone matrix is described in this article. Since it contains ferrous and titanium barium particles, this composite shows magnetorheological and also electrorheological properties. The electrostriction of composite samples in the electric field with maximal intensity 1.5x10{sup 6} V/m was investigated. The magnetostriction in the magnetic field with maximal induction 1 T was also investigated. It was found that samples elongate with increased electric field intensity, and the magnetic field induction was detected. By increasing the samples' elongation with increase of ferrous particles, titanium barium particles and pores number were also detected. In the investigated division of the electric and magnetic field the elongation changed in a linear way. The maximal elongation achieved was ...
Stemming from their unique combination of elevated strength, low density, and good overall corrosion resistance, beta titanium alloys have become attractive candidate materials for critical, high-stress, components in corrosive services. An overview of the comparative corrosion resistance of beta alloys to conventional alpha and alpha/beta titanium alloys in common industrial and aerospace service environments generally reveals attractive behavior depending on the environment and alloy composition and, in some cases, alloy condition. Expanded performance windows are especially noted for the molybdenum-rich beta alloys, particularly in regard to resisting reducing acids, stress corrosion, and high temperature localized chloride attack, along with hydrogen and oxidation resistance. Where applicable, implications of this enhanced corrosion performance on current and perspective beta alloy applications are also noted.
With the deposition of PVD hard coatings on the tools applied in machining operations it is possible to achieve significant improvements in the performance and quality of the machining processes. Depending on the machined material and the operating principle, e.g. turning, milling or drilling, not only different machining parameters but also different coating materials are necessary. In interrupted cut machining of tempered steel, for example, the life time of Ti-C-N coated inserts is several times greater than the Ti-C-N coated ones. This is a result of the favourable thermophysical and tribological properties of Ti-N-C. The potential for tool protection by CrN coatings is a result of the high ductility and low internal stress of this coating materials. CrN films can be deposited with greater film thickness, still maintaining very good adhesion. This paper presents the development ...
A decoupled characteristic between the damping of a specific swing mode and the stabilizer gain of the corresponding machine in multimachine power systems is identified. Using this decoupled characteristic a power system stabilizer (PSS) synthesis approach which is based on the phase compensation concept is verified on a 9-machine system and the dynamic performance of this system is significantly improved. This method is proved to be effective, simple and it can provide useful guidance for the PSS field tuning.
The necessity of the electron beam machine characterization via dose measurement is discussed. It includes a measurement of comprehensive dose distribution (at known X and Z axis) for verification of the machine performance. The acquired data were then used to develop the irradiation parameters such as energy, current, distance, conveyor speed, exposure rate and depth inside product to be irradiated. These parameters will be used as a guide for the routine irradiations. (Author)
A micro-computer based fuzzy logic power system stabilizer is applied to a micro-machine system to investigate its efficiency in real time control. The stabilizing signal is determined by using measured speed or real power signals at every sampling time to damp the system oscillations. The results show the proposed stabilizer improves the system damping effectively subject to various types of disturbances.
A mathematical model of the multi machine electric power system to analyse its dynamics has been worked out. The effectivity of the power system stabilizer developed in the one machine system has been tested by means of this model. The influence of the arrangement of the stabilizers on the stability of the electric power system has also been investigated. High damping of electromechanical transient processes has been achieved. 7 refs., 1 tab., 5 figs.
A consortium has been formed to undertake the design and development work necessary to establish a comprehensive machine condition monitoring (MCM) and diagnostic system for hydroelectric generating units. By working closely with participating utilities and interested manufacturers, the consortium is initiating the integration of existing and developing technologies into a comprehensive, modular, on- and off-line hydroelectric MCM system.
An analysis of the diagnosis of loading and service dependability of a rail-mounted excavator used in surface lignite mining is described. Wheel power vibrations in electric motor bearings and electric motor input bearings to the gearbox were measured in situ, in horizontal, vertical, and axial directions. The data were analyzed using a mathematical relationship. The results are presented in a loading diagram that shows the deterioration and the acceptable lower bound of machine conditions over time. Work is continuing. 5 refs., 1 fig.
The paper presents a sequential procedure for coordinated stabilization of a multimachine power system with arbitrary complexity of the system model. The most effective machine to be equipped with a power system stabilizer is identified using eigenvalue analysis. The selection is based on the sensitivity of critical eigenvalues to increases in the coefficient of a damping term which is inserted in each equation of motion, in succession. The method is applied to a three-machine system and simulation studies show appreciable improvements in the small disturbance stability of the system.
An outline of the instrumentation and control systems associated with fuelling machines is given. The control systems such as hydraulic system, oil hydraulic system, electric control system and the remote control systems have been discussed in detail. The difference between RAPP and MAPP fuel handling control systems has been explained. A computer based system for the Narora fuel handling control system is also discussed. (S.K.K.).
Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by ...
Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess ...
First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.
Background and ObjectivesClopidogrel resistance or low-responsiveness may be associated with recurrent atherothrombotic events after drug-eluting stent (DES) implantation. We prospectively...Full Text Available
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)
Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, insignificant IGC attack was noticed. The IGC resistance increased with increase in the dose for all the specimens aged at 973 K, and the ...
Purpose:To study the outcome of in-the-bag implanted square-edge polymethyl methacrylate (PMMA) intraocular lenses (IOL) with and without primary posterior capsulotomy in...Full Text Available
We have demonstrated that optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-UV light with photon energies greater than the band gap energy of approx. equal to 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform UV illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of >= 100:1 and spatial resolution of approx. equal to 10 #mu#m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. equal to 100 mJ/cm"2) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. We have recently found from studies of H, He and Ar implanted PLZT that the ...
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly ...
The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. ...
Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, TED was suppressed in the p"+/n junction ...
A major problem in the maintenance and rehabilitation of pipelines is the removal of the original coating system, particularly in cases where the coating contains sticky components or adhesives. It has been found that such coatings can be removed by use of a cleaning machine with a plurality of counter-rotating carbide-tipped tools mounted to an oscillating head embracing the pipe, and which is operable at the same time to travel along the length of the pipe. Such a machine can be designed to effect a positive, gentle milling operation on the pipe surface to remove the coating efficiently and at relatively low power consumption. A particular advantage of the pipe cleaning machine of the invention is that its design and manner of operation allows it to be used in the field to clean an uncovered section of pipeline, for example a natural gas pipeline, without the requirement of removing the pipeline section from the ditch in ...
The intent and purpose of this work was to investigate and demonstrate cooperative behavior among a group of mobile robot machines. The specific goal of this work was to build a small swarm of identical machines and control them in such a way as to show a coordinated movement of the group in a flocking manner, similar to that observed in nature. Control of the swarm`s individual members and its overall configuration is available to the human user via a graphic man-machine interface running on a base station control computer. Any robot may be designated as the nominal leader through the interface tool, which then may be commanded to proceed to a particular geographic destination. The remainder of the flock follows the leader by maintaining their relative positions in formation, as specified by the human controller through the interface. The formation`s configuration can be altered manually through an interactive ...
We report the results of characterization of nonlinear refractive index of the composite material produced by MeV Ag ion implantation of LiNbO{sub 3} crystal (z-cut). The material after implantation exhibited a linear optical absorption spectrum with the surface plasmon peak near 430 nm attributed to the colloidal silver nanoclusters. Heat treatment of the material at 500 C caused a shift of the absorption peak to 550 nm. The nonlinear refractive index of the sample after heat treatment was measured in the region of the absorption peak with the Z-scan technique using a tunable picosecond laser source (4.5 ps pulse width). The experimental data were compared against the reference sample made of MeV Cu implanted silica with the absorption peak in the same region. The nonlinear index of the Ag implanted LiNbO{sub 3} sample produced at five times less fluence is on average two times greater than that of the ...
In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate that end-of-range defects can be stabilized by choosing the ...
There is increasing use of radiofrequency radiation (RFR) in industry for communications, welding, security, radio, medicine, navigation etc. It has been recognised for some years that RFR may interact with cardiac pacemakers and steps have been taken to prevent this interference. It is less well recognised that other metallic implants may also act as antennas in an RFR field and possibly cause adverse health effects by heating local tissues. There are a large and increasing number of implants having metal components which may be found in RFR workers. These implants include artificial joints, rods and plates used in orthopaedics, rings in heart valves, wires in sutures, bionic ears, subcutaneous infusion systems and (external) transdermal drug delivery patches"1. The physician concerned with job placement of such persons requires information on the likelihood of an implant interacting with RFR so as to ...
High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients ...
Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.
The use of cathode ray irradiated arterial allografts on the reconstruction of small peripheral arteries is described. The fate of irradiated arterial allografts implanted subcutaneously in rats was compared histologically with that of allografts which were fresh, frozen or stored in 70% alcohol. Follow-up studies were made of 10 dogs in which irradiated arterial allografts had been implanted in the femoral artery to be evaluated; long term patency by arteriography, gross and histologic changes of the implanted allografts, and the luminal surface of the implanted allografts by scanning electron microscopic studies. For the purpose of antigenic studies, extracts of canine arteries which had been irradiated, frozen or stored in 70% alcohol, were prepared and tested by the following immunological methods: precipitation, Ouchterlony gel diffusion, and passive cutaneous anaphylaxis. From the results obtained ...
Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after ...
Abstract Objectives: The purpose of this study was to evaluate the osseointegration of the dental implants placed into the mandible augmented with different techniques in pigs. Material and methods: Four adult domestic pigs were used. Horizontal augmentation of the mandible was performed in animals by using vascularized femur flap (VFF), non-vascularized femur graft (NVFG) and monocortical mandibular block graft (MG). After 5 months of healing 10 dental implants were placed into each augmented site. The pigs were sacrificed after 3 months of healing. Undecalcified sections were prepared for histomorphometric analysis. Results: Mean bone-implant contact (BIC) values for implants placed into MG, NVFG and VFF were 57.38 11.97%, 76.5 7.88%, 76.53 8.15%, respectively. The BIC values of NVFG and...
We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, the amorphous regions formed by cascades eventually overlap, and a continuous amorphous layer is formed. In that case, most of the excess interstitials generated by the implantation are swept to the surface as the amorphous layer regrows, and do not diffuse in the crystalline region. This process reduces the amount of transient enhanced diffusion (TED) during annealing. This model also reproduces the dynamic annealing during high temperature implants. In this case, the local amorphous regions regrow as the implant proceeds, without the formation of a continuous amorphous layer. For ...
The surface layer optimized in resistance of corrosion and wear has been obtained by W + C dual implantation on H13 steel. The electrochemical polarization measurements show that the peak current density I_D is increased and then saturated with increasing of voltage scanning loops. The I_D is 100 times smaller than that of H13 steel, and 2-3 times smaller than that of tungsten. Then influence of dual implantation order on corrosion resistance is also studied. The I_D for W_5C_8 implanted first with W is half of that for C_5W_5 implanted first with C. The corrosion resistance structure of the samples after corrosion is observed by SEM. The X-ray analysis indicates that the structure consists of disperse phases of WC, W_2C, FeW, Fe_2W, FeW_2C and iron carbides. It is shown from Auger analysis that the optimum complex layer for corrosion resistance consists of thin carbon film on surface, disperse phases ...
Ion implantation and subsequent annealing are essential stages in today's advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the '+n', in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I-V excess distribution. In contrast to, simulate impurity clustering/deactivation when there is an impurity ...
The beta titanium alloy, however, can be d_,_wn. _,plusor minus 0.010-inch_after the parts have been cold. Its availability in strip lengths and its good ...
This study deals with the torsional response of Ti-8823 and 18Ni (200) maraging steel. The effect of different heat treatments and the subsequent change in microstructure are investigated. In the case of the Ti-8823, a comparison was made between the solu...
The methods of surface modification of Ti-Zr alloy by laser treatment are considered. Characteristics of laser modification without- and with surface melting and with melting in different gaseous environments and with nickel microalloying are presented. Maximum depth, hardness and corrosion resistance are observed under nickel laser alloying.
The corrosion behavior of Ta, Ti, and Zr in inorganic acids, bases, chlorides and miscellaneous salts, waters and gases, and organic acids and miscellaneous organic chemicals is summarized. (W.L.H)
In the body, vascular cells continuously interact with tissues that possess nanostructured surface features due to the presence of proteins (such as collagen and elastin) embedded in the vascular wall....Full Text Available
Ti-15Mo-2.7Nb-3Al-0.2Si (Timetal-21S), a metastable #beta#-titanium alloy, is a candidate material for titanium matrix composite structures in hydrogen-fueled hypersonic planes because of its excellent formability and adequate mechanical properties in the 500--800 C temperature range. The alloy is strengthened through the precipitation of fine #alpha# particles in the #beta# matrix. The mechanical properties and microstructures are controlled by a solutionizing/aging heat treatment. A major concern in using titanium alloys in hydrogen service is the embrittlement caused by the precipitation of hydrides. It is believed that the large solubility of hydrogen in the #beta#-phase would preclude the precipitation of hydrides in Beta titanium alloys, especially at low hydrogen pressures. However, depending on the hydrogen content, a shift in the ductile/brittle transition temperatures to levels much higher ...
The authors investigate the possibility of the direct heterogeneous catalytic synthesis of ethylbenzoate from benzonitrile. The catalysts tested were oxides of aluminium, titanium, and vanadium. The main conversion product detected chromatographically was ethylbenzoate; benzaldehyde, benzamide, and benzanilide were also identified. Aluminium oxide was found to be the most effective catalyst.
Three types of titanium hydrides have been reported: #delta#, #epsilon# and #gamma# hydrides. The #delta# hydride forms in the composition range from TiH/sub 1.5/ to TiH/sub 1.99/ and has a CaF/sub 2/ structure with metal atoms on an fcc lattice and hydrogen atoms randomly occupying tetrahedral interstitial sites. At higher hydrogen concentrations, TiH/sub 2/, the fct (c/a # #epsilon# transformation is apparently diffusionless, similar to that operating in the cubic/tetragonal transformation in zirconium hydride. The metastable fct #gamma# hydride having a c/a value of 1.09 or 1.12 forms from solid solutions of hydrogen in the hcp #alpha# matrix. While the titanium hydride precipitation in #alpha#-Ti and its alloys has attracted extensive investigation, hydride formation in bcc #beta#-Ti alloys has rarely been studied because they have not been thought to be liable to hydride formation. This paper shows conclusive evidence for the fcc #delta# ...
The development of structural barriers for nuclear waste packages involves selection of candidate materials, their screening by mechanical and corrosion testing, rigorous accelerated testing, and evaluation and comparison with other package elements. This document presents results from work conducted on titanium and ferrous alloys.
The desorption of uranium from the granular titanium-activated carbon composite adsorbent (concentration of uranium: 25.5 mg/l-Ad), which adsorbed uranium from natural sea water, was examined by the column process with acidic eluent at room temperature. The column operation was able to be carried out without destruction of the granular adsorbent by the generation of the carbon dioxide, and free from disturbance of the eluent flow by precipitate of calcium sulfate dihydrate with sulfuric acid eluent. The amount of acid consumption by the adsorbent was 0.87 eq/l-Ad. The alkaline earth metals were eluted in the range of elution volume below 2l/l-Ad, whereas uranium, iron, and titanium were eluted above 2l/l-Ad. Therefore, uranium was separable from the alkaline earth metals which were adsorbed in the most quantity in the adsorbent. In the range of elution volume 2 to 12l/l-Ad, the percentage of desorbed uranium and the concentration ratio of ...
Wood, R. A.; and Ogden, H. R.: The All-Beta Titanium Alloy (Ti-13V-llCr-3Al). DMIC Rept. 110 (ASTIA AD 214002), Battelle Mem. Inst., Apr. 17, 1959. 22. White ...
The tool materials durability problem, in particular shock and wear resistance, has allowed to formulate a set of requirements and also to stablish the dependence between physical properties and wear. However, for understanding the nature of the process, for example determining the tribological property of the cutting tool, it is necessary to consider the atom interactions in a crystal. A theoretical study of the physical properties of cutting tool materials (W-Ti-C) with varying concentration of titanium is presented. Total and partial local electronic density for each atom in such hard solutions were calculated. (nevyjel)
The threshold stress intensities for stress corrosion crack propagation in beta titanium alloy 38-6-44, Ti3Al-8V-6Cr-4Mo-4Zr, has been determined in salt water and methanolic solutions. The alloy was immune to stress corrosion cracking (SCC) in aqueous sodium chloride solutions (marine atmosphere). However, in methanolic solutions, the alloy was very susceptible to SCC. This marked susceptibility in methanolic solutions can be mitigated by the addition of an inhibitor: sodium nitrate. Crack extension in the alloy was transgranular and failure occurred by brittle quasi-cleavage in methanolic solutions.
Strain rate effects for the high strength, metastable beta-titanium alloy Ti-8Mo-8V-2Fe-3Al are assessed in terms of tensile and fracture toughness behavior. It is shown that as the strain rate increases the yield strength, ultimate tensile strength, and ductility also increase. As a result of the decrease in the amount of intergranular fracture as the strain rate is increased, the dynamic fracture toughness values K/sub Id/ are greater than those obtained under static conditions as given by K/sub Q/.
We demonstrate reversible movement of (1/2)[110](110) dislocation loops generated from nanodisturbances in a #beta#-titanium alloy. High resolution transmission electron microscope observations during an in situ tensile test found three reversible deformation mechanisms, nanodisturbances, dislocation loops and martensitic transformation, that are triggered in turn with increasing applied stress. All three mechanisms contribute to the nonlinear elasticity of the alloy. The experiments also revealed the evolution of the dislocation loops to disclination dipoles that cause severe local lattice rotations.
The prospect for the recovery of rare earths from red mud, the bauxite tailings from the production of alumina is examined. The Jamaican red mud by far has the higher trace concentrations of lanthanum, cerium, neodymium, and yttrium. Scandium is also present. The dissolution of the rare earth is a major extraction problem because of the large volume of other materials. The recovery processes that have been proposed include the production of co-products such as iron, alumina, and titanium concentrates, with the rare earths going with the titanium. In this paper a critical examination of the possible processes are presented with the recommended research projects to be carried out.
Production of titanium alloys from the mixture containing large amounts of metallurgy wastes is very promising. It is shown that unlimited possibilities of the waste material use in the mixture (up to 100%) are provided by garnissage melting, the size of the cast being limited only by that of the vessel. With garnissage being used as a consumed electrode the metal is refined from hydrogen and the blank ingots to serve as consumed electrodes in electro-slag remelting are chemically homogeneous. The ingots thus obtained have dense structure, rather fine grain homogeneous chemical composition, are no less pure than those obtained by vacuum arc remelting and provide for economic savings.
A study was made of the variation in strength characteristics of group IV transition metal carbon nitrides alloyed with carbides or group V metal nitrides. A complex solid solution of titanium-niobium carbonitride was preliminarily synthesized to a homogeneous equilibrium state and then crushed. The calculated quantity of binder metal was added as elemental powders, the mixture was vibration ball milled in ethanol and the plasticized charge was used to press experimental specimens for mechanical testing. The studies showed that the high-temperature strength properties of the new cermet are superior to standard type KNT. The material is thus promising for use in the manufacture of tools. 8 references, 3 figures.
Studied are the mechanical properties of welded joints and heat affected zones of the Kh8N10T steel and OT4 and VT1-2 titanium alloys on welding in Ar+deltaF_6 and Ar+CCl_2F_2 mixtures contributed to a decrease of porosity. Tensile and impact tests of welded joints have revealed that additions of sulfur hexafluoride into argon causes a decrease of impact strength in titanium alloy when the tensile strength does not depend on the composition of a halogen-containing atmosphere. Freon (CCl_2F_2) additions decrease only slightly the impact strength of the investigated alloys.
The influence of deformation on the corrosion behavior of a newly developed multifunctional beta titanium alloy Ti-23Nb-0.7Ta-2Zr-O (mol%) in Ringer's solution at 310 K was evaluated using an electron backscatter diffraction technique and electrochemical measurements. The results showed that the effect of deformation on the corrosion resistance of the beta titanium alloy is complicated. Small levels of plastic deformation are detrimental to the corrosion resistance, whereas large deformations tend to eliminate this detrimental effect.
Formation of basis type texture at rolling of Ti + 6.0% Al + 1.5% V + 1.0% Mo system alloy with initial prismatic texture is investigated by means of X-ray techniques. Variations of mechanical features in titanium alloy sheets depending on temperature-deformation conditions of rolling are investigated. Main conditions for formation of the intensive basis textute in the investigated alloy sheets which provides for isotropic properties in sheet plane and for increased ductility are determined.
This work presents results of investigations on d.c. glow discharge nitriding of #alpha#+#beta# Ti-6Al-4V titanium alloy. The treatment was performed at 843 K in nitrogen-hydrogen atmosphere, pressure 300 Pa. Special attention was paid to nitriding mechanism and determination of the role of ion bombarding in nitriding process of titanium alloys. Produced as a result of d.c. plasma nitriding surface layers were subjected to macroscopic observations, microstructure studies, microhardness testing and X-ray analysis. (author)
The recent rapid progress in surface treatment techniques dictates that the titanium alloys should have an improved resistance to frictional wear without any loss of their high corrosion resistance. These requirements can be satisfied by producing surface layers of specified microstructure and phase composition. The present paper describes a modification of the plasma discharge nitriding treatment of titanium alloys, i.e. the glow discharge-assisted oxycarbonitriding, which by introducing oxygen, nitrogen and carbon into the surface zone of the layer [a Ti(NCO) type layer] improves its useful properties, primarily the resistance to frictional wear and the resistance to corrosion [T. Wierzchon, J. Sobiecki, Vacuum, 44 (1993) 975; T. Wierzchon et al., in: G. Hecht, F. Richter, J. Hahn (Eds.), Thin Films, DGM Informationgesellschaft, Germany, 1994, p. 195] [1:2]. This is because titanium shows a good affinity to oxygen, carbon ...
The temperature dependences of the heat capacity of commercial titanium VT1-0 and alloys on its base, VT5 and VT5-1, have been derived in the temperature range of 4 to 290 K. For comparison, similar measurements have been conducted on pure titanium and specially prepared solid solutions on its base (Ti+3.7 at.% Al and Ti+0.82 at.% Sn). The measurement accuracy has been sufficient for comparing the results with calculation data. The obtained results are interpreted using the known concepts of the role of the mass of interstitial atoms and changes in the interatomic bond forces. It is shown that the phonon components of the molar heat capacities of solid solutions of Al in titanium have lower values in the entire temperature range, as compared to titanium. The corresponding differences are proportional to the Al concentrations. The lower molar heat capacity in the case of dissolution of Al is due to the ...
Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been ...
Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A ...
A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess directly resulting ...
Plasma immersion ion implantation (PIII) is an effective materials modification and synthesis technique but has seldom been applied to ceramic materials due to the high electrical resistance that reduces the ion bombardment energy and sometimes causes serious electrical arcing in the instrument. Even in cases where PIII is applicable, the surface properties of the implanted insulating materials can be seriously affected due to the low ion energy and materials damage from electrical arcing. In order to enhance the surface and mechanical properties such as wear resistance of ceramic materials used in many industrial applications, surface modification is needed. In this work, we conduct carbon implantation into sintered #alpha#-SiC (silicon carbides that are widely used in vacuum ceramic bearings) using mesh-assisted plasma immersion ion implantation to enhance the surface properties. The use of a ...
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for ...
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for high-speed application ...
An expert system was developed which helps maintenance personnel diagnose the condition of rotor and stator windings and their cores, in motors and generators rated 2300 V and above. The expert system, called MICAA[TM], used an approach which has been found to be effective for diagnosing medical problems. The program required the user to input machine nameplate information, operating status, and any past test data available. In addition, the program would suggest tests that may be useful, as well as provide guidance to maintenance personnel on what to look for in visual inspections of the machine. The expert system stored and correlated all this information, calculated the overall condition of the component in question, and identified the most likely specific causes of any deterioration. The basic methodology of motor and generator condition assessment, and the architecture and processing performed by MICAA to obtain these capabilities were ...
Two quantities play a central role in that part of nonlinear optics which deals with the effects of a finite momentum spread in a particle beam: the orbit position whose derivative with respect to momentum is called 'orbit dispersion' and the betatron wave number whose derivative WRT momentum is the 'chromaticity'. The orbit dispersion varies with the azimuth and is essentially horizontal in a machine with a horizontal symmetry plane; parasitic radial fields induce a vertical component. The chromaticity is a scalar quantity related to the integral of the focusing strength, over one turn of the machine; it is defined for the horizontal and vertical planes. After recalling the general motion equation in the horizontal plane, the orbit dispersion and the chromaticity will be treated. Closed formulae are given for lumped elements and special emphasis is put on dipoles with a high deflection angle. (8 refs).
The logic named Piccolo for a picture database computer and its implementation is presented. The logic is shown to have three major advantages. One advantage is that the computer design based on this logic can handle a universal variety of pictorial data structures. Another advantage is that a set of data generated by rules such as texture distribution rules is stored in the picture computer efficiently. The third advantage is that this logic can serve as the basis of a logic for parallel processing machines. For implementation of the logic, a new methodology named architecture engineering is introduced as an architecture/design oriented methodology. Implementation case studies show the usefulness of the methodolgy. Two implementations on an abstract machine that are also on a parallel LISP machine are reported. 19 references.
The basic relationships of the convolution/superposition dose calculation technique are reviewed, and a modelling technique that can be used for obtaining a satisfactory beam model for a commercially available convolution/superposition-based treatment planning system is described. A fluence energy spectrum for a Co-60 treatment machine obtained from a Monte Carlo simulation was used for modelling the fluence spectrum for a Rokus M machine. In order to achieve this model we measured the depth dose distribution and the dose profiles with a Wellhofer dosimetry system. The primary fluence was iteratively modelled by comparing the computed depth dose curves and beam profiles with the depth dose curves and crossbeam profiles measured in a water phantom. The objective of beam modelling is to build a model of the primary fluence that the patient is exposed to, which can then be used for the calculation of the dose deposited in the patient. (authors)
During the last fifteen years a variety of instruments and transducers, such as voltage plugs, power transducers, flow and pressure transducers, recorders and tensometers, have been developed for underground use in measuring the performance and technical parameters of prototype machines. The equipment, until recently, has been in a portable form and was found useful by the industry generally, in fault finding and trouble-shooting exercises and in commissioning procedures performed by small teams on a call-out basis. Over the last five years the test equipment has been adapted and the techniques modified to suit individual colliery-based operations with more permanent machine mounted and built-in transducers. At the moment these techniques operate within the framework of a statutory planned preventive maintenance scheme for each mine. This paper discusses the merits of changing from preventive maintenance to condition-based maintenance and the ...
Metal machining facilities pose interesting design problems. This article provides an overview of key environmental control considerations and ways to deal with them. Machine shops offer a variety of environmental control challenges to mechanical engineers. Among the design problems that must be considered include: whether to provide space heating only or year-round air conditioning; temperature and relative humidity requirements; air cleanliness; exhaust air requirements; the type of HVAC system to be used; industrial waste and plumbing considerations; compressed air needs; and noise control. In addition, the designer must comply with worker health and safety and environmental protection regulations set forth by the National Institute of Safety and Health (NIOSH), OSHA, and EPA, as well as with any applicable state and local requirements.
An artificial neural network (ANN), trained as an inverse of the controlled plant, to function as a power system stabilizer (PSS) is presented in this paper. In order to make the proposed ANN PSS work properly, it was trained over the full working range of the generating unit with a large variety of disturbances. Data used to train the ANN PSS consists of the control input and the synchronous machine response with an adaptive PSS (APSS) controlling the generator. During training, the ANN was required to memorize the reverse input/output mapping of the synchronous machine. After the training, the output of the synchronous machine was applied as the input of the ANN PSS and the output of the ANN PSS was used as the control signal. Simulation results show that the proposed ANN PSS can provide good damping of the power system over a wide operating range and significantly improve the system performance.
Fibre-reinforced-polymer-composite material has been suggested as a bearing material to overcome tribological problems witnessed during the testing of Ram assembly of the 540 MWe fuelling machine at RTD. After successful trials at B-Ram the composite material has been adapted for B-RAM, C-Ram and RDB head at fuelling machines being tested at RTD, Hall 7 and at Tarapur. Laboratory evaluations were also carried out at Tribology Lab RTD to study effect of radiation on the composite. Paper deals with the various aspects of life prediction of this material in term of wear and radiation damage. (author)
In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.
The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well
The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd/sub 2/Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd/sub 2/Si caused a partial rejection of As for implanted doses of 2 x 10/sup 15/ cm/sup -2/ and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.
The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.
There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).
The present work is a research of the effect of helium on the microstructure, mechanical properties and fracture behaviors of a type 316 austenitic steel. Helium implantation was performed by 30-MeV #alpha#-particle injection on very small size specimens, using a cyclotron. Average helium content in a He-deposited region was up to 2000 appm He. In the case of 2000appm He implantation, intergranular fracture was sometimes observed on the helium deposited region after tensile test at room temperature. At elevated temperature test, however, this material showed the transition of fracture mode from transgranular-ductile fracture at 773K to intergranular fracture at 873. In the case of 500 appm He implantation, the transition of fracture mode was recognized at a temperature range of 873K to 973K. (author).
The effect of helium on the mechanical properties and fracture behaviors of a type 316 austenitic steel is presented. Helium implantation was performed by 30-MeV #alpha#-particle injection on very small, thin specimens, using a cyclotron accelerator. Average helium content in the He-deposited region was 50 to 2000 appm He. These specimens showed the transition of fracture mode from transgranular to intergranular fracture in elevated temperature tests. The transition temperature decreased with increase in the amount of implanted helium. For example, in the case of 2000 appm and 500 appm He implantation, the transition temperatures were between 773 and 873 K and 873 and 973 K, respectively. (orig.).
Abstract Objective: To compare the vertical dimensional changes with regard to graft height in a long-term follow-up in patients treated with two different grafting materials used in maxillary sinus floor elevation procedures. Material and methods: Twenty consecutive patients were included. One group was grafted with autogenous bone from the mandible (chin area), and the other group was augmented with a 100%b-tricalcium phosphate (b-TCP). During a 4- to 5-year period, in each patient, at least five panoramic radiographs were made. These panoramic radiographs were used for morphometric measurements, at three different locations. The three locations were the first bone to implant contact at the distal side of the second most posterior implant (L1), halfway between this implant and the most p...
Chronic mesenteric arterial ischemia is an uncommon condition associated a high morbidity and mortality. It is most Commonly caused by atherosclerotic occlusive disease. Patients may suffer epigastric or periumbilical postprandial pain ten to thirty minutes after eating. A case of chronic mesenteric artery stenosis, the diagnosis was performance with colonoscopy and biopsy. We present a case report of a patient with chronic mesenteric ischemia. Mesenteric arteriography was performed and documented estenosis of the mesenteric superior artery. Then percutaneous arteriography with angioplasty and implant of stent was performed. The patients became completely asymptomatic and normal colon mucous is observed in control colonoscopy. The purpose of this report is to present the case endoscopy, clinic and radiological features and to describe the percutaneous angioplasty and implant of stent. We believe that angioplasty treatment offers and improvement ...
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.
N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code
Abstract BACKGROUND: In Brazil, the usual forms of zinc (Zn) supply to coffee plants have limitations that compromise the element availability to the plant. This study proposes to test an alternative approach to supplying the nutrient to Coffea arabica L. using trunk implanted zinc tablets. Additionally, the effect of Zn on the production and quality of coffee beans was also evaluated. RESULTS: The highest total coffee bean production was recorded in plants implanted with Zn tablets (TA), while the lowest was recorded in the control treatment, without zinc supply (WZn), reaching a bianual production of 188.2 and 130.1 60-kg bags of processed beans per hectare, respectively. In the treatments where Zn were applied as tablet implantation or as foliage spraying (SZn); the bean size was larger...
The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.
On 10 dialysis patients we performed 12 balloon dilatations, 2 catheter lyses, 6 stent implants (Palmaz stent) and one atherectomy of central venous stenoses or occlusions (v. subclavia, v. brachiocephalica) at the shunt arm of the patient. The primary success rate was, in balloon PTA and lysis, 12/14 interventions, and in stent placement and atherectomy 7/7. The angiographical and clinical primary result after stent implantation was significantly better than after conventional dilatation. After 66% of the balloon dilatations recidivation occurred within the first year; this can be treated by means of repeated PTA. Whether long-term exclusion of recurrence can be achieved by stent implantation, must be established by means of follow-up studies that are at present in progress. (orig.).
We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.
Abstract Introduction.- Infection is the worst complication seen with inflatable penile prosthesis (IPP). Both the American Medical Systems (AMS) and Coloplast IPP have infection retardant coatings. AMS is coated at the factory with rifampicin and minocycline (InhibiZone). The Coloplast IPP has a hydrophilic coating covalently bonded to its components that will absorb any aqueous solution before implantation and provides increased surface lubricity to decrease bacterial adherence. Aim.- We tested several antibiotic dips comparing zones of inhibition (ZOI) against five commonly infecting bacteria with coated Coloplast implants. Results were compared with those ZOI created with strips of an AMS IPP precoated with InhibiZone. Methods.- Pieces of sterile Coloplast Titan IPP were dipped in (i) ...
We demonstrate rapid fabrication of submicrometer-diameter pores in borosilicate glass using femtosecond laser machining and subsequent wet-etch techniques. This approach allows direct and repeatable...Full Text Available
of early humanitarians, and the vivisectors turned to Rene Descartes (1596 1650 ) to justify ...A celebrated mathematician, physiologist, and psychologist, Descartes provided a general philosophy of the irrelevance of ethics to the ...Animals, according to Descartes, were insensible and irrational machines; moved, like clocks, but
The flow of water through a dam of fairly arbitrary shape is examined in the limit of large frictional drag on the flow. The relation of the problem to the one-phase Stefan problem and a problem of anodic smoothing is explored. Monotonicity and uniqueness...
IntroductionRecent Food and Drug Administration legislation enables the mandating of product performance standards for cigarette smoke and the evaluation of manufacturers’...Full Text Available
The coking plant is described with some details of coal supplies and coke quality. Engineering improvements to the by-product system and coke oven machines, major repair of two batteries, installation of a PLC-based monitoring and control system, and training of personnel are dealt with at greater length.
Skin sensitization is the most commonly reported occupational illness, causing much suffering to a wide range of people. Identification and labeling of environmental allergens is urgently required to...Full Text Available
Hard surface finishing represents the final manufacturing step for functional areas of machine elements in state-of-the-art production. Raceways of rolling bearing rings are ground and honed to the required low roughness. Plastic deformation is restricted to a narrow edge zone of the hardened steel. Reheating of the machined components below the martensite tempering or bainite transformation temperature results in a marked decrease of the XRD line width on the surface. The investigated samples are made of through-hardened standard bearing steel 100Cr6 (international denotation: SAE 52100). On the basis of a material model that explains the effect as a complex diffusion process of dislocational carbon segregation, i.e. static strain aging, the measured kinetics of the XRD line width reduction is simulated by an Arrhenius-type equation, which describes the rate-controlling reaction step of temper carbide dissolution. The formation of a small ...
Since the beam width on the helical tomotherapy machine produced by TomoTherapy, Inc. is typically a few centimeters in the longitudinal direction (into the bore), the optimizer must choose...Full Text Available
This guide explained the requirements for Off-Road Compression Ignition Engine Emission Regulations established under the Canadian Environmental Protection Act. The regulations are enforced by Environment Canada, which authorizes and monitors the use of the national emissions mark. The regulations prescribe standards for off-road engines that operate as reciprocating, internal combustion engines, other than those that operate under characteristics similar to the Otto combustion cycle and that use a spark plug or other sparking device. The regulations apply to engines that are typically diesel-fuelled and found in construction, mining, farming and forestry machines such as tractors, excavators and log skidders. Four different types of persons are potentially affected by the regulations: Canadian engine manufacturers; distributors of Canadian engines or machines containing Canadian engines; importers of engines or machines ...
This guide explained the requirements for Off-Road Compression Ignition Engine Emission Regulations established under the Canadian Environmental Protection Act. The regulations are enforced by Environment Canada, which authorizes and monitors the use of the national emissions mark. The regulations prescribe standards for off-road engines that operate as reciprocating, internal combustion engines, other than those that operate under characteristics similar to the Otto combustion cycle and that use a spark plug or other sparking device. The regulations apply to engines that are typically diesel-fuelled and found in construction, mining, farming and forestry machines such as tractors, excavators and log skidders. Four different types of persons are potentially affected by the regulations: Canadian engine manufacturers; distributors of Canadian engines or machines containing Canadian engines; importers of engines or machines ...
To keep up with the speeds of modern production lines, most machine vision applications require very powerful computers (often parallel-processing machines), which process millions of points of data in real time. The human brain performs approximately 100 billion logical floating-point operations each second. That is 400 times the speed of a Cray-1 supercomputer. The right software must be developed for parallel-processing computers. The NSF has awarded Rensselaer Polytechnic Institute (Troy, N.Y.) a $2 million grant for parallel- and image-processing software research. Over the last 15 years, Rensselaer has been conducting image-processing research, including work with high-definition TV (HDTV) and image coding and understanding. A similar NSF grant has been awarded to Michigan State University (East Lansing, Mich.) Neural networks are supposed to emulate human learning patterns. These networks and their hardware implementations ...
The fault signature can be revealed by vibration analysis in machine fault detection and diagnosis. Empirical mode decomposition (EMD) is a self-adaptive method that can decompose a vibration signal into informative intrinsic mode functions (IMFs). This paper addresses the improvement of the weakness of the traditional EMD algorithm and presents a new midpoint-based EMD method for effective fault signature analysis of a rotating machine. In the proposed method, geometrical midpoints of successive extrema are employed to estimate the local mean of an analyzed signal. Signal decomposition is then self-adaptively performed to achieve IMFs through removal of the midpoint-based local means. The representative IMF containing fault information is selected for identifying the fault signature. The effectiveness of the proposed method was verified by means of simulation and an application to gear fault diagnosis. Results indicated that the midpoint-based ...
The patent relates to fluid operated devices for moving articles. The machine may be used in filling a nuclear fuel canister with fuel pellets where there is a tendency for out of squareness of pellets to produce a jam condition readily cleared by a modest force. (U.K.).
A compact heat exchanger pedestal array for augmenting heat transfer in a machine is disclosed. The compact heat exchanger pedestal array includes a wall having first and second surfaces. The first surface faces a heated flow path and the second surface p...
The subject of FDD (fault detection and diagnosis) has gained widespread industrial interest in machine condition monitoring applications. This is mainly due to the potential advantage to be achieved from reduced maintenance costs, improved productivity and increased machine availability. This paper presents a new FDD scheme for condition machinery of an industrial steam turbine using a data fusion methodology. Fusion of a SVM (support vector machine) classifier with an ANFIS (adaptive neuro-fuzzy inference system) classifier, integrated into a common framework, is utilized to enhance the fault detection and diagnostic tasks. For this purpose, a multi-attribute data is fused into aggregated values of a single attribute by OWA (ordered weighted averaging) operators. The simulation studies indicate that the resulting fusion-based scheme outperforms the individual SVM and ANFIS systems to detect and diagnose incipient steam ...
One tiny marine plant makes life on Earth possible: phytoplankton. These microscopic photosynthetic drifters form the basis of the marine food web, they regulate carbon in the atmosphere, and are responsible for half of the photosynthesis that takes place on this planet.
Research indicates that diesel equipment can be used safely in undergound coal mines provided that certain conditions prevail. These conditions are: the machines and engines are approved for underground use, an adequate maintenance and training program is in effect, an adequate monitoring system with proper instrumentation is used, and adequate ventilation is maintained.
BC Hydro recently conducted a demonstration test of a bearing condition monitor. The test, at the 529-MW Kootenay Canal project, proved the ability of the monitor to detect machine condition faults. The capability to detect changing conditions during normal operation of hydroelectric machines gives hydro plant owners the opportunity to anticipate needed maintenance and ultimately to reduce the number of equipment failures. BC Hydro intends to install bearing condition monitors, as well as windings monitors, brushgear monitors, environmental monitors, and other selected systems in as many as 46 of its hydro generators. BC Hydro analyzed forced outages between 1985 and 1989 in its hydro system to identify which parts of a generating unit resulted in the highest number of hours of outage. From there, the utility has formulated a concept for a machine condition monitoring system. To keep the system cost effective, it will be ...
One of the tasks comprising ERDA Contract EY-76-S-02-2840, ''Minimization of Cupola Energy and Air Pollution,'' has been the carrying out of a comprehensive survey of world literature relating to the cupola furnace for melting of cast iron. It was decided...
Whenever moving surfaces interact, wear particles are produced. Microscopic examination of the morphology of such wear debris is an accepted method for machine condition monitoring and fault diagnosis. Wear particle analysis has not, however, been widely accepted in industry because it is dependent on expert interpretation of particle morphology and relies on subjective assessment criteria. Consequently, the methods are time consuming and expensive and are not always consistent. The use of automated computer image analysis systems to assess the morphology of debris promises to overcome these limitations by making the methods more time and cost efficient, and also more consistent and effective. The first step required for automation of the analysis procedure is to develop objective criteria for assessing the wear particle morphology. Numerical parameters to describe the morphology have been developed and are outlined in this paper. A system using such techniques ...
Kerf geometry, kerf wall features, and cutting front characteristics of an Abrasive Waterjet (AWJ) machined Graphite/Epoxy (Gr/Ep) laminate were studied. A macroscopic analyses suggests that geometrical features associated with AWJ machining of Gr/Ep laminates are influenced by three macro regions along the cutting depth. The presence of these regions, including initial damage at jet entry, smooth cutting, and rough cutting near the jet exit, depends on the operating conditions. Design of experiments and analysis of variance were used to determine the effect of cutting parameters on kerf characteristics and to develop empirical models for kerf profile and features of the three distinct macroscopic regions. Cutting front analysis revealed that the mechanisms of material removal in AWJ machining of Gr/Ep do not change over the jet penetration depth. In general, high quality uniform cuts may be obtained by minimizing initial ...
This paper reviews some of the mining equipment exhibited at the Chicago Minexpo exhibition. The exhibits include: large mining trucks; tractor with impact ripper; haulers; shuttle roof bolter; and monitoring systems for vehicles or mining machines. 2 figs.
...position to receive material. (2) Self-loading haulage equipment used as a loading machine. In working places in which self-loading haulage equipment is operated to load material, the areas which...
BackgroundWe aimed to compare visual and refractive outcome following phacoemulsification and intraocular lens implant (IOL) and combined one-site phacotrabeculectomy.MethodWe...Full Text Available
A patient with a totally edentulous maxilla and a seVere Class III intermaxillary relationship in the anterior region was treated by implants. In the mandible, there were 10 teeth between the second premolars. The inclination and width of the maxillary anterior residual bone were measured on cephalometric X-ray film obtained before treatment. The results of cephalometric analysis did not support clockwise rotation of the mandible or lingual angling of the maxillary anterior teeth by use of prosthesis to improve the Class III relationship. Ten implants were simultaneously placed in the maxilla. Then, a maxillary temporary full bridge was seated after reduction of the crown lengths of the mandibular anterior teeth. An apically positioned flap operation was performed to eliminate periodontal pockets and to obtain clinically suitable crown lengths of the mandibular anterior teeth. A noncemented, screw-retained maxillary full bridge and a ...
We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant ...
A ten week old girl who had previously undergone a palliative procedure for the hypoplastic left heart syndrome had unrelieved aortic coarctation that did not respond to standard balloon dilatation....Full Text Available
High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is ...
A multiple probe approach of implanting microdialysis probes into each separate tissue layer would better represent sampling from the stomach. Presently, microdialysis sampling experiments are...Full Text Available
Background and purpose It has been speculated that the prevalence of metal allergy may be higher in patients with implant failure. We compared the prevalence and cause of revisions following...Full Text Available
PurposeThis prospective study followed 61 patients who were partially dentulous and considered to have insufficient bone volume for routine implant treatment and consequently underwent sinus inlay bone grafting.Patients and MethodsThe patients were treated with maxillary sinus floor augmentation with particulated autogenous bone from the mandibular ramus/corpus. After a healing period, dental implants (n = 180) were installed.ResultsRadiographic examination revealed average residual vertical bone heights of 6.5 mm in the first premolar region, 3.8 mm in the second premolar region, 3.5 mm in the first molar region, and 2.6 mm in the second molar region. The average implant lengths were 12 mm in the first premolar region and 11 mm in the second premolar, first, and second molar regions. All ...
Purpose.Since 2002, six blind patients have undergone implantation of an epiretinal 4 × 4 electrode array designed to directly stimulate the remaining cells of the retina...Full Text Available
A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the ...
This clinical report described the oral rehabilitation of a cleft lip and palate patient with removable partial denture. Although implant-supported fixed treatment was presented as part of the optimum...Full Text Available
Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly ...
Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly ...
BackgroundThis study aimed to assess whether endoscopic implantation of an injectable esophageal prosthesis, the Gatekeeper Reflux Repair System (GK), is a safe and effective therapy...Full Text Available
In this work we report a study of the induced changes in structure and corrosion behavior of martensitic stainless steels nitrided by plasma immersion ion implantation (PI"3) at different previous heat treatments. The samples were characterized by x-ray diffraction and glancing angle x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and potentiodynamic measurements. Depending on the proportion of retained austenite in the unimplanted material, different phase transformations are obtained at lower and intermediate temperatures of nitrogen implantation. At higher temperatures, the great mobility of the chromium yields CrN segregations like spots in random distribution, and the #alpha#"'-martensite is degraded to#alpha#-Fe (ferrite). The nitrided layer thickness follows a fairly linear relationship with the temperature and a parabolic law with the process time. The corrosion resistance depends strongly on ...
Plasma Immersion Ion Implantation (PIII) is a new hybrid technology for surface treatment of materials based on the principles of plasma nitriding and ion implantation. The equipment and the operation of the system are introduced. As well as providing an alternate method of ion implantation, it is possible to combine energetic ion bombardment with plasma nitriding. Different metal materials and treatment conditions have been studied. The capability of PIII-treatment to improve the properties of a wide range of metals has been proven. Application for forming tools and their industrial test has been successful. (orig.) [Deutsch] Die Plasmaimmersionsimplantation (PIII) ist eine neue Hybridtechnologie zur Behandlung von Werkstoffoberflaechen und basiert auf den Prinzipien des Plasmanitrierens und der Ionenimplantation. Die Anlagentechnik und die Arbeitsweise werden vorgestellt. Verfahrensspezifische Vorteile entstehen durch die ...
AIM: To evaluate the efficacy of self expandable metallic stents (SEMS) in patients with malignant esophageal obstruction and fistulas.METHODS: SEMS were implanted in the presence of fluoroscopic...Full Text Available
The enhancement of positive secondary ion yields of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In/sup +/ were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5x10/sup 15/ to 4x10/sup 16/ O-atoms/cm/sup 2/. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si/sup +/ intensity is proportional to c(O)sup(x) (with x=1.4) in the concentration regime, 1.5<=c(O)<=30 at%. The O/sup +/ intensity shows a similar dependence for c(O)> or approx.20 at.%.
BackgroundObservational clinical studies have shown that patients with diabetes have less favorable results after percutaneous coronary intervention compared with the non-diabetic...Full Text Available
An evaluation of totally implanted venous access systems inserted in 163 consecutive children with cancer is reported. From 1988 to 1994, 180 subcutaneous ports were inserted in children more than 1...Full Text Available
MRT criteria have been developed to distinguish between tumour and implant material following examination of 50 patients who had transsphenoidal hypophysectomies for tumours. Judgements were based on the postoperative hormonal status and the operation notes. Following contrast injection of Gd-DTPA and using T[sub 1] weighted spin-echo sequences, implant material appeared as sandwich-like, linear or circular structures. Residual recurrent tumour produced homogenous or non-homogenous aspects without marginal enhancement in 84% of cases. Postoperative displacement of the infundibulum to the opposite side was observed in 73% of patients with tumour remnants. Sensitivity of MRT was 70%, specificity 95%. There was a positive predictive value of 94% and a negative predictive value of 72% with an accuracy of 81%. This provides assistance in differentiating between tumour remnants and implant material. MRT is recommended as a method ...
MRT criteria have been developed to distinguish between tumour and implant material following examination of 50 patients who had transsphenoidal hypophysectomies for tumours. Judgements were based on the postoperative hormonal status and the operation notes. Following contrast injection of Gd-DTPA and using T_1 weighted spin-echo sequences, implant material appeared as sandwich-like, linear or circular structures. Residual recurrent tumour produced homogenous or non-homogenous aspects without marginal enhancement in 84% of cases. Postoperative displacement of the infundibulum to the opposite side was observed in 73% of patients with tumour remnants. Sensitivity of MRT was 70%, specificity 95%. There was a positive predictive value of 94% and a negative predictive value of 72% with an accuracy of 81%. This provides assistance in differentiating between tumour remnants and implant material. MRT is recommended as a method of ...
A 57-year-old man with a history of coronary artery disease and placement of an implantable cardioverter-defibrillator presented at our emergency room with an anterior ST-elevation myocardial infarction....Full Text Available
AimsTranscatheter treatment of heart valve disease is well established today. However, for the treatment of tricuspid regurgitation (TR), no effective catheter-based approach is...Full Text Available
Human endometrium resists embryo implantation except during the 'window of receptivity'. A change in endometrial gene expression is required for the development of receptivity. Uterine calbindin-D28k...Full Text Available
Nb_3Sn films (Tsub(c)=17.8 K) were obtained by implantation of Sn"+ ions into Nb films (1500 A thick) after subsequent annealing. The annealing temperature required for the formation of the A15 phase in the implanted films was about 100 K higher than for Nb-Sn sandwich films evaporated at 300 K. The influence of the Sn concentration and of the annealing temperature was studied by measuring the sample resistance. The Nb-Sn compounds formed during the annealing process were analysed by measurements of the Moessbauer-effect of "1"1"9Sn. The implantation method was also used to produce Nb-Ge films with a ratio Ge/Nb approximately 1/3. The Ge-concentration and the temperature of the Nb-target (300-1070 K) were varied. These variations as well as subsequent annealing at 600-850"0C did not lead to superconducting transition temperatures above 8 K. (Auth.).
Several studies have demonstrated that telephone use presents a challenge for most cochlear implant (CI) users, and this is attributed mainly to the narrow bandwidth (300–3400 Hz) introduced...Full Text Available
Restenosis remains the main complication of balloon angioplasty and/or stent implantation. Preclinical testing of new pharmacologic agents preventing restenosis largely rely on porcine models, where...Full Text Available
(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of ...
(001) CZ silicon wafers were implanted with arsenic (As"+) at energies of 10--50 keV to doses of 2 x 10"1"4 to 5 x 10"1"5/cm"2. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As ...
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model ...
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. ...
The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of ...
Research was conducted at Pacific Northwest Laboratory to develop high photosensitivity adaptive optical elements utilizing ion implanted lanthanum-doped lead-zirconate-titanate (PLZT). One centimeter square samples were prepared by implanting ferroelectric and anti-ferroelectric PLZT with a variety of species or combinations of species. These included Ne, O, Ni, Ne/Cr, Ne/Al, Ne/Ni, Ne/O, and Ni/O, at a variety of energies and fluences. An indium-tin oxide (ITO) electrode coating was designed to give a balance of high conductivity and optical transmission at near uv to near ir wavelengths. Samples were characterized for photosensitivity; implanted layer thickness, index of refraction, and density; electrode (ITO) conductivity; and in some cases, residual stress curvature. Thin film anti-ferroelectric PLZT was deposited in a preliminary experiment. The structure was amorphous with x-ray diffraction showing the beginnings of ...
The biocompatibility and corrosion resistance of various materials for use as sacrificial anodes in in vivo hybrid fuel cells were studied. Aluminium, zinc, and magnesium alloy AZ31B were studied, and the results are discussed.
BACKGROUND: Accurate estimation of left ventricular ejection fraction (LVEF) has assumed great significance in the era of automatic implantable cardioverter defibrillators (AICDs), and a low EF may...Full Text Available
A mass separated focused ion beam (FIB) is a very useful tool to fabricate nanostructures by writing implantation within an ion beam synthesis process. In these investigations the IMSA-OrsayPhysics FIB, equipped with a Co_3_6Nd_6_4 alloy liquid metal ion source, was applied. Si(100) and (111) wafers were implanted with 60 keV Co"+"+ ions in the dose range of 2 . 10"1"6 to 2 . 10"1"7 cm"-"2. Implantation parameters were investigated, like pixel dwell time, relaxation time (time between two cycles), dose rate as well as the pixel overlapping factor. The subsequent annealing was done in a two step process, namely 600 deg. C for 60 min and 1000 deg. C for 30 min in a N_2 ambient. The results obtained by SEM investigations in terms of continuous nanowire structures following the direction and interrupted CoSi_2 pattern in the direction show a clear dependence on the time scale as well as the scanning mode of the irradiation. ...
The circulation in microvascularized rib grafts has been compared with that in conventional rib grafts and in those augmented by a direct vascular bundle implantation into the bone grafts. A new experimental model has been designed to correlate vascular perfusion, bone scan patterns, tetracycline labeling, and histological findings in these bone grafts. Posterior microvascularized rib grafts were found to have a circulatory pattern identical to that of the normal rib. Failed microvascularized rib grafts were revascularized more slowly than conventional rib grafts. Vascular bundles implanted into rib grafts remained patent and increased the rate of revascularization. The stripping or preservation of periosteum had no observable effects on the rate or pattern of conventional rib graft revascularization. The circulation in rib grafts was accurately reflected in technetium 99 bone scans, as was the patency of the anastomoses of microvascularized ...
The effect of the nitrogen uptake in {alpha}-iron upon spark erosion in gaseous and liquid ammonia, plasma nitriding, and plasma immersion ion implantation is studied. The resulting phases and hyperfine parameters, measured by the Moessbauer spectroscopy, are discussed from the point of view of initial conditions of their preparation and subsequent heat and/or mechanical treatment. Spark erosion in the ammonia gas produces fine particles with the dominating ferromagnetic {alpha}-Fe phase (50%). The 20% of specimen volume form {alpha}'-Fe and {alpha}''-Fe{sub 16}N{sub 2} phases. The last 30% occupy the {gamma}'-Fe{sub 4}N, ferro- and paramagnetic {epsilon} phases, and {gamma}-Fe(N). Nitriding in the liquid ammonia allows to incorporate the higher content of nitrogen into {alpha}-iron particles which results in the formation of paramagnetic {epsilon}({zeta})-Fe{sub 2}N phase. This phase also dominates the surface of {alpha}-iron ...
The effect of the nitrogen uptake in #alpha#-iron upon spark erosion in gaseous and liquid ammonia, plasma nitriding, and plasma immersion ion implantation is studied. The resulting phases and hyperfine parameters, measured by the Moessbauer spectroscopy, are discussed from the point of view of initial conditions of their preparation and subsequent heat and/or mechanical treatment. Spark erosion in the ammonia gas produces fine particles with the dominating ferromagnetic #alpha#-Fe phase (50%). The 20% of specimen volume form #alpha#'-Fe and #alpha#''-Fe_1_6N_2 phases. The last 30% occupy the #gamma#'-Fe_4N, ferro- and paramagnetic #epsilon# phases, and #gamma#-Fe(N). Nitriding in the liquid ammonia allows to incorporate the higher content of nitrogen into #alpha#-iron particles which results in the formation of paramagnetic #epsilon#(#zeta#)-Fe_2N phase. This phase also dominates the surface of #alpha#-iron specimen implanted by nitrogen using ...
PurposeThe aim of this study was to evaluate 3.5 years-cumulative survival rate of implants placed on augmented sinus using Osteon, a bone graft material, and to assess the height...Full Text Available
The use of cementless threaded cups in THA is a well-established treatment. Fractures of the cups are rare complications recorded in individual cases with material defects being discussed as the primary...Full Text Available
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during ...
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the ...
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in ...
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5x10"1"3 cm"-"2 Si into (001)Si, followed by a high temperature (815 degree C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the open-quote open-quote+1 close-quote close-quote model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. copyright 1996 ...
The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).
Photoelectrochemical oxidation is a potentially interesting method for destroying toxic organic materials. We have studied the photoelectrocatalytic activity of TiO{sub 2} films made by thermal oxidation of titanium, low pressure chemical vapour deposition (LPCVD), and anodisation of titanium. Two model organic compounds have been investigated for photooxidation: methyl phosphonic acid (MPA) which is a nerve gas analogue and 4-chlorophenol (4-CP) which is a chlorinated aromatic compound considered a standard for the evaluation of the TiO{sub 2} / UV processes. In addition to photoelectrochemical characterisation the films have been characterised by profilometry, XRD, AFM, photocurrent spectroscopy and Raman microscopy. Correlations have been made between the physical properties of the thin films and their catalytic activities. The most catalytic sample of thermally oxidised titanium was prepared at 400 deg C, and the ...
Electric utilities are actively seeking ways of optimizing the economics of their operations by improving productivity and reducing time and money spent on maintenance. Iberdrola, a Spanish utility, is using advanced machine condition-monitoring technology to centralize control and maintenance of its hydropower projects as a means of achieving those goals. The company is using a blend of technologies to supervise their projects from a regional control center. The monitoring scheme makes use of data from on-line, machine-condition monitors, displays from in-plant audio asnd video equipment, and analysis from the control center`s SCADA system.
Recent research work on adjustable speed pumped storage plants conducted in Japan, the USA and Europe suggests that they have many advantages over fixed-speed plants, and can contribute to power system regulation even in pump mode. This paper describes two types of static frequency converter for such pumped storage plants, especially those with greatly fluctuating heads. The design characteristics and operation of the doubly fed induction machine and the synchronous machine with DC link converter are set out and the devices compared. (UK)
In this paper, power system stabilizer design for multi-machine power systems is translated into an equivalent problem of decentralized controller design for Multi-Output Multi-Input (MIMO) control systems. Subject to a condition based on the structured singular values, each stabilizer can be designed independently. Within this general framework, the conventional stabilizer design methodology based on the concept of synchronous and damping torques is used to decide the design details of each stabilizer. The suggested design method is applied to a model of a practical 10 machine power system. (author)
The contribution under consideration spans a wide curve from the first deadly accident of motorized aviation in the year 1908 up to newer tendencies of the so-called team resources management on observation points and control stations in order to pursue fundamental questions in man-machine systems. A continuous differentiation in the consideration of the factor human beings in complex technical systems is described. This is illustrated by the example of concepts for leadership, communication and decision making on observation points and control stations.
Software to aid the distribution and coordination of tasks between different processors was developed to distribute applications written in Fortran. This development led to the discovery of problems unique to Fortran and to interesting practical solutions. Two graphical applications were distributed to a variety of machines and machine pairs: CDC 7600-LSI/11, CRAY-LSI/11, VAX 11/780, and Apollo. These distributions pointed out several parameters such as the use of Fortran COMMON, communication parameters, and processing capabilities that can affect the successful distribution of applications.
This paper proposes the design of LQ-PSS (linear quadratic power system stabilizer) for improving power system stability using genetic algorithm(GA). We are turned weighting matrices of LQ-PSS using GA. To evaluate the usefulness of the proposed method, we performed the nonlinear simulation on a single machine infinite system. As results on a single machine infinite system. As results of the simulation, the proposed method shows the better control performance than CPSS(conventional power system stabilizer) in terms of settling time and damping effects. (author). 7 refs., 7 figs., 3 tabs.