Science.gov (United States)

The role of the NASA/DOD Aerospace Knowledge DIffusion Research Project in helping to maintain U.S.

KoreaScience (Korea)

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KoreaScience (Korea)

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Science.gov (United States)

... within an accuracy of +5 psig. 2. Starting Pressure and Diffuser Geometra Preliminary, tests indicated that the geometry suggested by Ref. ...

Energy Technology Data Exchange (ETDEWEB)

The diffusion coefficient of particles in radioactive gases has been calculated with account of random wandering of aerosols (occurrence of local fields affecting the particles; recoils accompanying radiation emitted by particles, etc.). To determine the diffusion coefficient, the method of Fokker-Planck equation derivation was used. A formula is presented for calculating the radiation-stimulated diffusion coefficient. A linear growth of the diffusion coefficient with radioactivity is noted according to the formula, the diffusion coefficient is mainly determined by the field in the radiation damage region. The aerosol radioactivity may result in a more rapid deposition of aerosols in the pipelines and aerosol purification systems. The diffusion rate grows not only in the presence of intrinsic radioactivity but in case of external radiation exposure as well.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

Science.gov (United States)

An experimental study of H-air counterflow diffusion flames (CFDFs) is reported. Coaxial tubular

International Nuclear Information System (INIS)

A linear diffusion model serves as the basis for determination of an effective radon diffusion coefficient in concrete. The coefficient was needed to later allow quantitative prediction of radon accumulation within and behind concrete walls after application of an impervious radon barrier. A resolution of certain discrepancies noted in the literature in the use of an effective diffusion coefficient to model diffusion of a radioactive gas through a porous medium is suggested. An outline of factors expected to affect the concrete physical structure and the effective diffusion coefficient of radon through it is also presented. Finally, a field method for evaluating effective radon diffusion coefficients in concrete is proposed and results of measurements performed on a concrete foundation wall are compared with similar published values of gas ...

International Nuclear Information System (INIS)

Contrary to the electronic excitation induced phenomena of desorption and sputtering, we observed incorporation of oxygen in a thin Fe film during its irradiation with swift heavy ions. It is observed that the adsorbed oxygen diffuses in to the Fe film. The incorporation of oxygen and its diffusion in the bulk of the film is a manifestation of extremely large electronic energy deposition by the incident ions. It is shown that the experimentally observed high diffusivity of oxygen in Fe during irradiation is due to the existence of transient melt phase of Fe.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Norwegian Open Research Archives (NORA)

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KoreaScience (Korea)

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Science.gov (United States)

PMID:21710264

Science.gov (United States)

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International Nuclear Information System (INIS)

Radon appears mainly by diffusion processes from the point of origin following #alpha#- decay of "2"2"6Ra in underground soil and building materials used, in the construction of floors, walls, and ceiling. The transport phenomenon of radon through diffusion is a significant contributor to indoor radon entry. In the present study radon diffusion through sand, cement, mixtures of sand + cement (1:1), sand + cement (2:1), sand + cement (3:1), sand + cement (4:1) has been carried out using LR-115 type II solid state nuclear track detectors (SSNTDs). The radon diffusion coefficient and diffusion lengths have been calculated for different materials. The effect of compaction, which changes the porosity and permeability of the materials, on radon diffusion has also been studied. (author)

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

Energy Technology Data Exchange (ETDEWEB)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

Energy Technology Data Exchange (ETDEWEB)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant ...

International Nuclear Information System (INIS)

Up to now, P diffusion in Ge is modeled with an effective diffusivity involving at most a quadratic dependence with the free electron concentration (n). However, recent theoretical studies suggest the existence of a triply negatively charged state for the free vacancy in germanium and experimental data indicate that the E center (PV pair) in Ge has a double acceptor state. These two facts would be consistent with a diffusivity model involving a cubic dependence with n. In this paper the validity of this approach is checked for both pure thermal diffusion (intrinsic and extrinsic) and implanted phosphorus, using either our own experiments or other data available from the literature. Although some discrepancies still exist in some cases for the redistribution of implanted P, it is shown that the introduction of this cubic dependence significantly improves the overall agreement as compared with the usual ...

Energy Technology Data Exchange (ETDEWEB)

SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of {approximately}2E13cm{sup {minus}2}. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.

Energy Technology Data Exchange (ETDEWEB)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

International Nuclear Information System (INIS)

Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi_2) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis ...

International Nuclear Information System (INIS)

The mathematical calculation to obtain a radon diffusion coefficient from measured radon transient-diffusion data is usually done by fitting a difference equation to the data. The difference equation is obtained through transformation of the time-dependent diffusion equation based on Fick's law. But, actual measured transient-diffusion data often have much scatter. Therefore just fitting over the whole range of the measured data through the method of least squares may not always be valid, because the method offers mathematical interpretation rather than a physical one. Instead, the actual radon diffusion coefficients must be otherwise obtainable from measured radon transient data. Taking this viewpoint, the present paper claims that about a 90% leveling-off time is often easily discernible regardless of the shape of the radon transient curve obtained from the measured data and it ...

Energy Technology Data Exchange (ETDEWEB)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due ...

Science.gov (United States)

Results are reported from studies of the diffusion rate of xenon through frog abdominal skin and toad urinary bladders, typical epithelial membranes. It was concluded that intracellular water serves as the principal barrier for xenon passage through epithelial tissue.

Science.gov (United States)

Phase 2 of the four phase NASA/DoD Aerospace Knowledge Diffusion Research Project was undertaken to study the transfer of scientific and technical information (STI) from government to the aerospace industry and the role of librarians and technical informa...

UK PubMed Central (United Kingdom)

A rebreathing method was developed for measuring diffusing lung capacity for carbon monoxide (DLCO) in a hyperbaric environment. Twenty two professional naval divers with normal lung function were included...Full Text Available

UK PubMed Central (United Kingdom)

We introduce in this paper a new method for reducing neurodynamical data to an effective diffusion equation, either experimentally or using simulations of biophysically detailed models. The dimensionality...Full Text Available

UK PubMed Central (United Kingdom)

Modifications of the design and calibration procedure of a diffusion porometer permit determinations of stomatal resistance which agree well with results obtained by leaf energy balance. The energy...Full Text Available

Science.gov (United States)

The vibrational states, absorption energies, and diffusions of H in Pd and Pd1-xAgx(0Pd-Ag alloys should avoid the Ag-rich areas.

Science.gov (United States)

For abstract, see NSA 26 23, number 56263.

British Library Electronic Table of Contents (United Kingdom)

Asymptotic and numerical analysis of relaxation self-oscillations in a three-dimensional system of Volterra ordinary differential equations that models the well-known Belousov reaction is carried out. A numerical study of the corresponding distributed model-the parabolic system obtained from the original system of ordinary differential equations with the diffusive terms taken into account subject to the zero Neumann boundary conditions at the endpoints of a finite interval is attempted. It is shown that, when the diffusion coefficients are proportionally decreased while the other parameters remain intact, the distributed model exhibits the diffusion chaos phenomenon; that is, chaotic attractors of arbitrarily high dimension emerge.

Energy Technology Data Exchange (ETDEWEB)

A practical method to determine the ionic diffusion coefficient and activation energy by using quasielastic light scattering (QELS) is presented. It is shown that a temperature dependence curve of the QELS intensity at a fixed frequency can be well fitted by Jonscher's formula and that the diffusion parameters can be obtained from this curve fitting. This method is successfully applied not only to crystals with high optical quality, as reported earlier, but also to opaque ceramics, which are more important than the crystals from a practical point of view. The composition dependence of the ionic diffusion coefficient is studied in sintered YbSZ to show the usefulness of this method.

International Nuclear Information System (INIS)

Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

Energy Technology Data Exchange (ETDEWEB)

We write a path-integral expression for the Green function of a advected scalar on a fluid flux. (author)

Science.gov (United States)

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International Nuclear Information System (INIS)

First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.

International Nuclear Information System (INIS)

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

Energy Technology Data Exchange (ETDEWEB)

The development of a gas-operated diffusion absorption heat pump for the heating of living spaces is described. By various improvement an energy efficiency of the prototypes of 1.5 was achieved. Structural alterations led to a lower overall height and lower production costs. The CFCs used in electric heat pumps were replaced by environmentally neutral ammonia. Compared with conventional gas heating systems, the CO2 output could be reduced by more than 30%. figs., tabs.

International Nuclear Information System (INIS)

An interface-marker technique has been used to investigate the relative rates of diffusion of Si and of metal atoms during the growth of metal silicide films. The technique enables recognition of a reference plane in thin film diffusion using Rutherford backscattering, while minimizing any perturbation of the diffusion process. Examples are drawn from studies of the growth of silicides of W, Mo, Ta, Nb, Pd and Pt. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Radon proof barriers are used for lowering of radon transport from the soil into the house and the determination of the radon diffusion coefficient is an important parameter to be determined in order to design the minimal thickness of the radon proof insulation. A method has been developed in our laboratory by using modified Lucas cells connected to a radon source and tightly closed onto the top by the tested membranes whose radon diffusion coefficients are being measured. Solving the time-dependent differential equation for radon diffusion in the membrane for well-defined experimental conditions the effective radon diffusion coefficient of the insulating material can be evaluated by comparing the radon concentration decrease in the cell for the first hours with the well-known radioactive decay. First results obtained in several preliminary tests carried out with a parafilm M barrier and two ...

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point ...

International Nuclear Information System (INIS)

Diffusion during He"+, Ne"+, and Xe"+ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu_6Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the diffusion-saturation level is similar to that of the ...

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow ...

International Nuclear Information System (INIS)

Brain development during the first year of life was assessed quantitatively using apparent diffusion coefficient (ADC) images constructed from diffusion-weighted MR image data. The imaging plane was coronal at the section of the pons. The cerebral peduncle, internal capsule, corona radiata, superior longitudinal fasciculus and thalamus were selected for evaluation of their ADC values. A diffusion sensitive gradient was added in the anteroposterior direction. Thus the orientation of nerve fibers in the cerebral peduncle, internal capsule and corona radiata was perpendicular to it, and that in the superior longitudinal fasciculus was parallel to it. In neonates, the cerebral peduncle and internal capsule, having been moderately myelinated at birth, showed the slowest diffusion. The corona radiata and superior longitudinal fasciculus, having been unmyelinated at birth, showed the fastest ...

International Nuclear Information System (INIS)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The ...

Science.gov (United States)

This study addresses the modeling of transdermal diffusion of drugs, to better understand the permeation of molecules through the skin, and especially the stratum corneum, which forms the main permeation barrier of the skin. In transdermal delivery of systemic drugs, the drugs diffuse from a patch placed on the skin through the epidermis to the underlying blood vessels. The epidermis is the outermost layer of the skin and can be further divided into the stratum corneum (SC) and the viable epidermis layers. The SC consists of keratinous cells (corneocytes) embedded in the lipid multi-bilayers of the intercellular space. It is widely accepted that the barrier properties of the skin mostly arises from the ordered structure of the lipid bilayers. The diffusion path, at least for lipophilic molecules, seems to be mainly through the lipid bilayers. Despite the advantages of transdermal drug delivery compared to other drug ...

CERN Document Server

As a social media, online social networks play a vital role in the social information diffusion. However, due to its unique complexity, the mechanism of the diffusion can be different from the ones in other types of networks and remains unclear to us. Meanwhile, few works have been done to reveal the coupled dynamics of both the structure and the diffusion of online social networks. To this end, in this paper, we propose a model to investigate how the structure is coupled with the diffusion in online social networks from the view of weak ties. Through numerical experiments on large-scale online social networks, we find that in contrast to some previous research results, selecting weak ties preferentially to republish cannot make the information diffuse quickly, while random selection can achieve this goal. However, when we remove the weak ties gradually, the coverage of the ...

International Nuclear Information System (INIS)

High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients as a function of ...

International Nuclear Information System (INIS)

In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative Ostwald ripening ...

International Nuclear Information System (INIS)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the ...

Energy Technology Data Exchange (ETDEWEB)

We demonstrate the rapid optical characterization of large numbers of individual metal nanoparticles freely diffusing in colloidal solution by confocal laser spectroscopy. We find that hollow gold nanospheres and solid silver nanoparticles linked with a bifunctional ligand, both designed nanostructures, exhibit significantly higher monodispersity in their Rayleigh and Raman scattering response than randomly aggregated gold and silver nanoparticles. We show that measurements of rotational diffusion timescales allow sizing of particles significantly more reliably than can be obtained using translational diffusion timescales.

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

CERN Document Server

We study diffusion of Cosmic Rays (CRs) in turbulent magnetic fields using test particle simulations. Electromagnetic fields are produced in direct numerical MHD simulations of turbulence and used as an input for particle tracing, particle feedback on turbulence being ignored. Statistical transport coefficients from the test particle runs are compared with earlier analytical predictions. We find qualitative correspondence between them in various aspects of CR diffusion. In the incompressible case, that we consider in this paper, the dominant scattering mechanism occurs to be the non-resonant mirror interactions with the slow-mode perturbations. Perpendicular transport roughly agrees with being produced by magnetic field wandering.

CERN Document Server

A significant asymmetry in baryon/antibaryon yields in the central region of high energy collisions is observed when the initial state has non-zero baryon charge. This asymmetry is connected with the possibility of a baryon charge diffusion in rapidity space. Evidently, such a diffusion should decrease the baryon charge in the fragmentation region leading to the corresponding decrease of the multiplicity of leading baryons. As a result, a new mechanism for Feynman scaling violation in the fragmentation region is obtained. We present the quantitative predictions for the Feynman scaling violation at LHC energies and even at highier energies that can be important for cosmic ray physics.

British Library Electronic Table of Contents (United Kingdom)

This paper is devoted to investigate the influences of thermal dispersion and magnetic field on a hot semi-infinite vertical porous plate embedded in a saturated Darcy-Forchheimer-Brinkman porous medium. The coefficient of thermal diffusivity has been assumed to be the sum of the molecular diffusivity and the dynamic diffusivity due to mechanical dispersion. The effects of transverse magnetic field parameter (Hartmann number Ha), Reynolds number Re (different velocities), Prandtl number Pr (different types of fluids) and dispersion parameter on the wall shear stress and the heat transfer rate are discussed.

International Nuclear Information System (INIS)

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

Energy Technology Data Exchange (ETDEWEB)

Experiments have been carried out in water at 355 C to study transport of oxygen and hydrogen (as deuterium) in growing corrosion films. Composition of the films was also examined in 2.9 Mev and 3.9 Mev /alpha/-particle backscattering experiments. Corrosion occurs predominantly by oxygen diffusion through the film via grain boundary or similar short circuit diffusion paths, to form fresh oxide at the oxide metal interface. Increasing grain size within thick pre-breakaway films contributes to a decrease in diffusivity. The rate transition results from the generation of new diffusion pathways in previously protective oxide. Unexpectedly high concentrations of deuterium were observed. 26 refs.

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

Science.gov (United States)

... A. Fasano, SD Howison. JR Ockendon & M. Primicerio. Some remarks on the regularisation of the supercooled one-phase Stefan problem. Quart. ...

Science.gov (United States)

... as far as mammary development is concerned but carries the NF-κB reporter, there is diffuse NF-κB activity throughout the epithelial tissue that is ...

CERN Document Server

We briefly review capabilities and requirements for future instrumentation in UV- and X-ray astronomy that can contribute to advancing our understanding of the diffuse, highly ionised intergalactic medium.

Energy Technology Data Exchange (ETDEWEB)

The US NRC, in its Generic Environmental Impact Statement on uranium milling has specified that the radon flux escaping a uranium mill tailings pile will be reduced to pCi/m/sup 2/ s by application of covering layers of soils and clays. These covers present a radon diffusion barrier, which sufficiently increases the time required for radon passage from the tailings to the atmosphere to allow for decay of /sup 222/Rn within the cover. The depth of cover necessary to reduce the escaping radon flux to the prescribed level is to be determined by calculation, and requires precise knowledge of the radon diffusion coefficient in the covering media. A Radon Attenuation Test Facility was developed to determine rates of radon diffusion through candidate cover materials. This paper describes this facility and its application for determining the influence of physical properties of the soil column on the radon ...

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

Energy Technology Data Exchange (ETDEWEB)

The code is being developed starting from the steady-state finite element code FENDER for the solution of the diffusion equation by extending it to become time-dependent. The numerical solution of the time-dependent multigroup diffusion equations within TRANSFUSION is performed at the present stage of development by using a backward difference scheme for the time variable, leading to a rearrangement of FENDER by adding a new loop over time steps. The code retains the multigroup coupled neutron-gamma features of FENDER, and provides a consistent two-, and quasi three-dimensional numerical solution of both static and time-dependent multigroup diffusion equations. (orig./DG)

British Library Electronic Table of Contents (United Kingdom)

In preparation for studying the hydrolytic degradation of Estane 5703 in the plastic-bonded explosive PBX 9501, the sorption (solubility) and diffusion of water in PBX 9501 and each of its components are studied experimentally and modeled theoretically. Experiments are reported that measure the weight gain or loss due to a change in the relative humidity (RH). For all of the components, the equilibrium amount of water sorbed per gram of sample is linear in the RH at low relative humidities but curves upwards at higher relative humidities. This behavior is modeled with a water cluster model. Diffusion coefficients are determined by modeling the time dependence of the water concentrations assuming Fickian diffusion, and that fits the data for some of the materials. However, all the samples t...

Energy Technology Data Exchange (ETDEWEB)

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

CERN Document Server

Heterogeneous anisotropic diffusion problems arise in the various areas of science and engineering including plasma physics, petroleum engineering, and image processing. Standard numerical methods can produce spurious oscillations when they are used to solve those problems. A common approach to avoid this difficulty is to design a proper numerical scheme and/or a proper mesh so that the numerical solution validates the discrete counterpart (DMP) of the maximum principle satisfied by the continuous solution. A well known mesh condition for the DMP satisfaction by the linear finite element solution of isotropic diffusion problems is the non-obtuse angle condition that requires the dihedral angles of mesh elements to be non-obtuse. In this paper, a generalization of the condition, the so-called anisotropic non-obtuse angle condition, is developed for the finite element solution of heterogeneous anisotropic diffusion problems. ...

UK PubMed Central (United Kingdom)

In this model, without dark matter, the flat rotation curves of galaxies and the mass-to-light ratios of clusters of galaxies are described quantitatively. The hypothesis is that the agent of gravitational...Full Text Available

International Nuclear Information System (INIS)

Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of carbon impurities.

Energy Technology Data Exchange (ETDEWEB)

The diffusion of alkali vapours in the anode compartment of a DIR-MCFC produces the deactivation of the internal reforming catalyst. Sets of ceramic porous membranes purposed to limit the diffusion have been manufactured by different techniques and the influence of the preparation technique and of the preparative variables on the morphological characteristics of the membranes structures has been studied.

International Nuclear Information System (INIS)

We consider a particle that is subject to a constant force and scatters inelastically on a vibrating periodically corrugated floor. At small friction and for small scatterers the dynamics is dominated by resonances forming spiral structures in phase space. These spiral modes lead to pronounced maxima and minima in the diffusion coefficient as a function of the vibration frequency, as is shown in computer simulations. Our theoretical predictions may be verified experimentally by studying transport of single granular particles on vibratory conveyors.

International Nuclear Information System (INIS)

A review is made of the various brain imaging agents utilised in the post few years with their own characters and respective advantages: cerebral blood volume tracers, non diffusible tracers, diffusible tracers among which gases and lipophilic agents. Our results with IAMP and SPECT are presented in two different clinical application fields: normal pressure hydrocephalus and cerebral ischemia.

International Nuclear Information System (INIS)

In order to investigate interactions of (Ti,W)(C,N) and (Ti,Mo)(C,N) with binder metals solid/solid diffusion couples were annealed. These two-dimensional arrangements provide good access to phase reactions occurring upon sintering already in the solid state. It was found in (Ti,W)(C,N)/Co- and (Ti,W)(C,N)/Ni-based couples that the reaction zone is thinner in contact with Co than with Ni. It was also observed that the reaction rate with both Co and Ni is lower if nitrogen is added to the hard phases. Beside a thickness variation of the diffusion zones a change in the microstructure was found. At the interface of nitrogen-free hard phases in contact with Co elongated microstructural constituents are formed with the main axis perpendicular to the interface, while at the interface of nitrogen-containing hard phases these elongated microstructural constituents were found in contact with Ni. Also phase reactions and the ...

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

International Nuclear Information System (INIS)

We study the dynamics of scroll vortices in excitable reaction-diffusion systems analytically and numerically. We demonstrate that intrinsic three-dimensional instability of a straight scroll leads to the formation of helicoidal structures. This behavior originates from the competition between the scroll curvature and unstable core dynamics. We show that the obtained instability persists even beyond the meander core instability of the two-dimensional spiral wave. copyright 1998 The American Physical Society.

Energy Technology Data Exchange (ETDEWEB)

The diffusion of methane confined in nano-porous carbon aerogel with the average pore size 48 {angstrom} and porosity 60% was investigated as a function of pressure at T = 298 K using quasi-elastic neutron scattering (QENS). The diffusivity of methane shows a clear effect of confinement: it is about two orders of magnitude lower than in bulk at the same thermodynamic conditions and is close to the diffusivity of liquid methane at 100 K (i.e. {approx} 90 K below the liquid-gas critical temperature T{sub C} {approx} 191 K). The diffusion coefficient (D) of methane initially increases with pressure by a factor of {approx}2.5 from 3.47 {+-} 0.41 x 10{sup -10} m{sup 2} s{sup -1} at 0.482 MPa to D = 8.55 {+-} 0.33 x 10{sup -10} m{sup 2} s{sup -1} at 2.75 MPa and starts to decrease at higher pressures. An explanation of the observed non-monotonic behavior of the diffusivity in the confined ...

Energy Technology Data Exchange (ETDEWEB)

We analyze large diffusion-limited aggregates and uncover a {ital discrete} scaling invariance in their inner structure, which can be quantified by the introduction of a set of {ital complex} fractal dimensions. We provide a theoretical framework and prediction of their values based on renormalization group theory and a previous wavelet analysis. {copyright} {ital 1996 The American Physical Society.}

Energy Technology Data Exchange (ETDEWEB)

The diffusion coefficient of radioactive radon (Rn) through buffer materials from low-level radwaste disposal site was determined in this present study by measuring the time-dependent diffusion of radon through a thin slab of the material. The diffusion process was required to reach a steady state so as to obtain a good estimate of the diffusion coefficient. A numerical method using the nonlinear least-squares and Marquardt`s method (NLSM method) was proposed for characterizing the diffusion coefficient of Rn so as to determine whether the process has reached steady-state or not. Natural mordenite, a potential buffer material of LLW disposal facility, was selected as testing porous material. The NLSM method was shown by the results to be able to estimate the diffusion coefficient even if the process was in transient period. Additionally, this method was also ...

Energy Technology Data Exchange (ETDEWEB)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an ...

Energy Technology Data Exchange (ETDEWEB)

We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant ...

Energy Technology Data Exchange (ETDEWEB)

The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f{sub A}. Accurate knowledge of f{sub A} is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f{sub A} is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f{sub A} without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f{sub Sb}{le}0.012 and f{sub B}{ge}0.98 at temperatures of {approximately}800{degree}C, which are the strictest bounds reported to date. Our results are in ...

Energy Technology Data Exchange (ETDEWEB)

Advances in technology are widely regarded as major sources of improvements in the competitive positions of firms and industries as well as of increases in national economic growth rates and standards of living. Because the benefits of such advances obviously depend on the extent to which they are utilized, considerable research has been focused on the diffusion of technological innovations. Most of these studies have sought to measure the dimensions of technological diffusion and to explain differences in diffusion patterns among innovations, industries, and nations as well as changes in such patterns over time. However, the most valuable contributions made so far have been to reveal the need for more-penetrating concepts, better measures, more-comprehensive analytical frameworks, and wider samplings of the variegated phenomena to be encompassed. Shortcomings in the theoretical work have seldom been directly harmful to ...

Energy Technology Data Exchange (ETDEWEB)

Petrographic research for the Nevada Nuclear Waste Storage Investigations focused on xenolithic variability in the Topopah Spring Member and on variations of clinoptilolite composition at Yucca Mountain. Zeolite and smectite occurrences were considered in terms of their relation to a disturbed zone beneath the potential repository, and mineral stability experiments have produced a new clinoptilolite structure as a result of prolonged heating at low temperature. Limitations were defined on the abundance of erionite and of sulfur. X-ray diffraction studies lead to improved analytical methods. Progress was made in the comparative study of mineralogy in sand ramps and in faults. Geological modeling considered the differences of the diffusion of nonsorbing tracers in vertically and in horizontally fractured rock. Modeling also treated the diffusion of a nonsorbing tracer in devitrified and in zeolitized rock. The results of these experiments in all ...

Energy Technology Data Exchange (ETDEWEB)

Removing noise from data is often the first step in data analysis. Denoising techniques should not only reduce the noise, but do so without blurring or changing the location of the edges. Many approaches have been proposed to accomplish this; in this paper, they focus on one such approach, namely the use of non-linear diffusion operators. This approach has been studied extensively from a theoretical viewpoint ever since the 1987 work of Perona and Malik showed that non-linear filters outperformed the more traditional linear Canny edge detector. They complement this theoretical work by investigating the performance of several isotropic diffusion operators on test images from scientific domains. They explore the effects of various parameters such as the choice of diffusivity function, explicit and implicit methods for the discretization of the PDE, and approaches for the spatial discretization of the non-linear operator etc. ...

Energy Technology Data Exchange (ETDEWEB)

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si{sub 1-y}C{sub y} layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by ...

Science.gov (United States)

Isotope separation of Ar, C, /sup 3/He, Kr, Ne, O, and Xe isotopes is reported. TiFeH/sub x/, TiCoH/sub x/, TiCuH/sub x/, and VH/sub x/ were studied using NMR (proton relaxation times). VD/sub x/ and VT/sub x/ were synthesized. The problem of calculating the valence state of Pu is discussed. A series solution to the plutonium (N,H) characteristic equation is suggested. Shipments of /sup 231/Pa, /sup 230/Th, and /sup 229/Th are reported. Separation and processing of /sup 234/U are also reported. Theoretical methods were developed to calculate temperature distributions as functions of water flow rate in liquid thermal diffusion columns. Diffusion coefficients were measured from 300 to 1200/sup 0/K for Kr-Xe and Kr-Ar. New thermal diffusion factors are submitted for Ne-Ar.

International Nuclear Information System (INIS)

The adverse effect of moisture diffusion on the properties of wood has been one of the main weaknesses of wood. Using a gamma irradiation method, wood-polymer composites have been produced which exhibit significant improvement in mechanical properties like compression, creep deformation and creep rupture particularly at high humidity. It has been thought that the impregnation of polymer into the wood has affected the moisture diffusion in the wood, so that its adverse effects on the mechanical properties has been reduced. In this report the apparent diffusion coefficients of a Ramin wood impregnated with varying amounts of polymethyl methacrylate (PMMA) were determined using a Fick's law approach. An initial linear relationship was found for impregnation of up to 70% PMMA, after which the diffusion coefficient levels off to a maximum value, for the three environmental relative humidity levels of 40, 60 ...

Energy Technology Data Exchange (ETDEWEB)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical ...

Energy Technology Data Exchange (ETDEWEB)

Alloy 800 is an austenitic Fe-Ni-Cr steel containing relatively minor but important amounts of carbon, aluminium and titanium. Special grades of alloy 800 known as 800H, 800HT and 800LC differ in the concentrations of these elements. In addition to these industrial specifications, further melts were prepared containing phosphorous or sulphur. Using a radioactive tracer method the bulk and grain-boundary diffusion of {sup 59}Fe was investigated in these alloys in the temperature range 800 to 1000 C. For evaluation of the diffusion profiles the approximation of Suzuoka was used, which considers the depletion of the tracer on the surface. By autoradiography it was confirmed that such depletion occurs. In alloy 800H the activation energy of grain-boundary diffusion of {sup 59}Fe was found to be (209{+-}17) kJ/mol; dissolved elements, especially phosphorous, increase the activation energy. The same materials - aged at 800 C for ...

Energy Technology Data Exchange (ETDEWEB)

Using a radioactive tracer method the bulk and grain boundary diffusion of {sup 59}Fe was determined in industrial alloy 800 and melts of alloy 800 with additional P and S in the temperature range 800 to 1000 C. The use of the approximation of Suzuoka was confirmed by autoradiographs. In alloy 800 H the activation energy of grain boundary diffusion of {sup 59}Fe is (209 {+-} 17)kJ/mol. Dissolved elements especially P increase the activation energy of the grain boundary diffusion of Fe by their segregation to the grain boundaries. In addition the influence of the grain boundary diffusion on the growth of creep cavities was investigated in the same materials, and the chemical composition of the creep cavities and grain boundaries were analysed by Auger electron spectroscopy (AES). For alloy 800 + 0.088 wt-%P an enrichment of about 14 at-%P was observed at the grain boundaries. The addition of P clearly ...

Energy Technology Data Exchange (ETDEWEB)

Radon emanation coefficients of 0.02 to 0.55 were measured at moisture contents ranging from dry to saturation in 18 different ores. The emanation coefficients rose from a minimum when dry to a plateau usually starting at 5 to 20 percent of saturation. A model, using measured pore-size distributions, suggested that the radium mineralization may be confined to annular layers about 0.02 micrometers thick around pores. Radon's diffusion coefficient was determined as a function of moisture. The techniques involved comparing a disk's exhalation as a function of time whether or not the disk had a distributed source. The model was free of approximations and included the effects of porosity and adsorption. An increase of diffusion coefficient with moisture for one or two ores was explained in terms of a model's equation for the diffusion coefficient in terms of both volume and surface ...

International Nuclear Information System (INIS)

The onset of double-diffusive convection in a couple-stress fluid-saturated horizontal porous layer is studied using linear and weak nonlinear stability analyses. The modified Darcy equation that includes the time derivative term and the inertia term is used to model the momentum equation. The expressions for stationary, oscillatory and finite-amplitude Rayleigh number are obtained as a function of the governing parameters. The effect of couple-stress parameter, solute Rayleigh number, Vadasz number and diffusivity ratio on stationary, oscillatory and finite-amplitude convection is shown graphically. It is found that the couple-stress parameter and the solute Rayleigh number have a stabilizing effect on stationary, oscillatory and finite-amplitude convection. The diffusivity ratio has a destabilizing effect in the case of stationary and finite-amplitude modes, with a dual effect in the case of oscillatory convection. The ...

International Nuclear Information System (INIS)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect ...

CERN Document Server

We model the transport of cosmic ray nuclei in the Galaxy by means of a new numerical code. Differently from previous numerical models we account for a generic spatial distribution of the diffusion coefficient. We found that in the case of radially uniform diffusion, the main secondary/primary ratios (B/C, N/O and sub-Fe/Fe) and the modulated antiproton spectrum match consistently the available observations. Convection and re-acceleration do not seem to be required in the energy range we consider: $1 \\le E \\le 10^3$ GeV/nucleon. We generalize these results accounting for radial dependence of the diffusion coefficient, which is assumed to trace that of supernova remnants. While this does not affect the prediction of secondary/primary ratios, the simulated longitude profile of the diffuse $\\gamma$-ray emission is significantly different from the uniform case and may agree with EGRET measurements ...

International Nuclear Information System (INIS)

Kinetic Monte Carlo simulations are used to analyze the ripening and dissolution of small Si interstitial clusters and #left brace#113#right brace# defects, and its influence on transient enhanced diffusion of dopants in silicon. The evolution of Si interstitial defects is studied in terms of the probabilities of emitted Si interstitials being recaptured by other defects or in turn being annihilated at the surface. These two probabilities are related to the average distance among defects and their distance to the surface, respectively. During the initial stages of the defect ripening, when the defect concentration is high enough and the distance among them is small, Si interstitials are mostly exchanged among defects with a minimal loss of them to the surface. Only when defects grow to large sizes and their concentration decreases, the loss of Si interstitials through diffusion to the surface prevails, causing their dissolution. The presence of ...

International Nuclear Information System (INIS)

Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the range of the fluorine implant and the ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial ...

International Nuclear Information System (INIS)

In this work the diffusion of ion-beam-injected self-interstitials (Is) and their interaction with impurities in crystalline Si are presented. In particular, the I penetration into a molecular beam epitaxy grown Si structure was studied by means of diffusion effects induced on B spikes, analyzed by a developed simulation code. Trapping effects at sample-surface and bulk are evidenced and modeled. The B marker approach was extended to the two-dimensional (2D) I-diffusion occurring as a consequence of ion implantation through a sub-micron dimension patterned oxide mask. I-source size effects on the I penetration have been found and modeled, quantitatively describing the 2D I-diffusion. The I-substitutional carbon interactions have been also studied, showing the C ability to effectively retain Is. The I-trapping mechanism was quantitatively studied by the simulation code, showing that one I is able to ...

Science.gov (United States)

This paper explores effects of differential diffusion in nonpremixed turbulent jet flames. Pulsed Raman scattering spectroscopy is used to measure temperature and species concentrations in chemically reacting jets of H{sub 2}/CO{sub 2} into air, over a range of jet Reynolds numbers from 1,000 to 30,000 based on cold jet fluid properties. Results show significant effects of differential diffusion at all jet Reynolds numbers considered. Differential diffusion between H{sub 2} and C0{sub 2} produces differences between the hydrogen element mixture fraction ({xi}{sub H}) and the carbon element mixture fraction ({xi}{sub c}). The greatest effects occur on the rich side of stoichiometric, where {xi}{sub H} is observed to be smaller than {xi}{sub C} at all Reynolds numbers. Differential diffusion between H{sub 2} and H{sub 2}O creates a net flux of hydrogen element toward the stoichiometric contour and causes ...

Science.gov (United States)

B-cell Chronic Lymphocytic Leukemia; Nodal Marginal Zone B-cell Lymphoma; Recurrent Adult Burkitt Lymphoma; Recurrent Adult Diffuse Large Cell Lymphoma; Recurrent Adult Diffuse Mixed Cell Lymphoma; Recurrent Adult Diffuse Small Cleaved Cell Lymphoma; Recurrent Adult Grade III Lymphomatoid Granulomatosis; Recurrent Adult Immunoblastic Large Cell Lymphoma; Recurrent Adult Lymphoblastic Lymphoma; Recurrent Grade 1 Follicular Lymphoma; Recurrent Grade 2 Follicular Lymphoma; Recurrent Grade 3 Follicular Lymphoma; Recurrent Mantle Cell Lymphoma; Recurrent Marginal Zone Lymphoma; Recurrent Small Lymphocytic Lymphoma; Splenic Marginal Zone Lymphoma; Waldenstrom Macroglobulinemia

Energy Technology Data Exchange (ETDEWEB)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

CERN Document Server

The Ludwig-Soret effect, the migration of a species due to a temperature gradient, has been extensively studied without a complete picture of its cause emerging. Here we investigate the dynamics of DNA and spherical particles sub jected to a thermal gradient using a combination of Brownian dynamics and the lattice Boltzmann method. We observe that the DNA molecules will migrate to colder regions of the channel, an observation also made in the experiments of Duhr, et al[1]. In fact, the thermal diffusion coefficient found agrees quantitatively with the experimental value. We also observe that the thermal diffusion coefficient decreases as the radius of the studied spherical particles increases. Furthermore, we observe that the thermal fluctuations-fluid momentum flux coupling induces a gradient in the stress which leads to thermal migration in both systems.

International Nuclear Information System (INIS)

Testing of barrier properties of insulating materials against radon is usually based on the measurement of the radon diffusion coefficient. Presented report summarizes results of radon diffusion coefficients measurements in more than 120 insulating materials obtained throughout Europe. All measurements were performed by the Czech Technical University, Faculty of Civil Engineering in cooperation with the Radiation Protection Institute. We have found out that great differences exist in diffusion properties, because the diffusion coefficients vary within eight orders from 10"-"1"5 m"2/s to 10"-"8 m"2/s. For each material category of different chemical composition statistical evaluation of results is presented. Possibilities of usage of the radon diffusion coefficient for the design of radon resisting membranes are discussed. Based on the experience from the Czech Republic the paper is ...

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

International Nuclear Information System (INIS)

The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.

Energy Technology Data Exchange (ETDEWEB)

A study was performed to examine currently recommended meteorological measurement programs and atmospheric transport and diffusion prediction models for nuclear power plants to determine their adequacy for plants located in coastal zones where meteorological conditions are normally more complex than at inland sites and to make recommendations for changes to improve current procedures. Recommendations were based on an extensive literature review and on studies of coastal meteorology and diffusion. The study was focused on the following areas: coastal internal boundary layers; tower location; instrument heights; atmospheric stability classification; plume meander; and diffusion calculations. Each of the areas is discussed with appropriate recommendations which were made with respect to either the scientific or the regulation aspects of current procedures or both. Other potential problem areas are also pointed out.

International Nuclear Information System (INIS)

A study of the influence of the concentration of secondary addition, high concentrations of primary dopant, diffusion enhancer and stabilizer on radiation hardness is presented. It is concluded that the diffusion enhancing technique is the most powerful method for improving radiation hardness. A new polystyrene scintillator which contains 2% pT, 0.02% POPOP, 20% diffusion enhancer and 0.02% stabilizer gave 91% of initial light output immediately after 3 Mrad irradiation in air. Data are presented that show that scintillator prepared from commercial polymer is more radiation-hard and has greater light output than scintillator prepared from monomer. It is assumed that this difference is due to different molecular weight distributions. Some protocols for acceleration of aging (yellowing and crazing) are presented. It is shown that one of the main reasons for aging of plastic scintillators is residual monomer. 10 refs., 18 ...

Energy Technology Data Exchange (ETDEWEB)

The interaction between a lower hybrid wave and a fusion alpha particle displaces the alpha particle simultaneously in space and energy. This results in coupled diffusion. Diffusion of alphas down the density gradient could lead to their transferring energy to the wave. This could, in turn, put energy into current drive. Here we calculate numerical solutions for the alpha energy transfer and study a range of conditions that are favourable for wave amplification from alpha energy. We find that it is possible for fusion alpha particles to transfer a large fraction of their energy to the lower hybrid wave. The numerical calculation shows that the net energy transfer is not sensitive to the value of the diffusion coefficient over a wide range of practical values. An extension of this idea, the use of a lossy boundary to enhance the energy transfer, is investigated. This technique is shown to offer a large potential benefit. ...

British Library Electronic Table of Contents (United Kingdom)

This paper aims to provide a comprehensive review of the various models or simulations for predicting drug release from bulk-degrading systems. A brief description of bulk degradation processes and factors affecting the degradation rate, and consequently the release kinetics, is presented first. Next, several important classical models, often used as the basis for subsequent model development, are discussed. Both mathematical models and Monte-Carlo based simulations have been developed for controlled release from bulk-degrading systems. The mathematical models can be further subdivided into two categories. First, the diffusion-based models whose transport mechanism is mainly governed by diffusion, but with degradation-dependent diffusion coefficients. These are generally simpler and easier...

Energy Technology Data Exchange (ETDEWEB)

A study, based on a literature review was made to examine currently recommended meteorological measurement programs and diffusion prediction methods for nuclear power plants to determine their adequacy for plants located in coastal zones. Although procedures for handling the near-worst case (stable, light-wind situation) were judged adequately conservative, deficiencies in guidelines and procedures were found with respect to the following: failure to consider the role of coastal internal boundary layers; specifications for tower locations and instrument heights; methods of classifying atmospheric stability; methods of allowing credit for plume meander, and models specified for diffusion calculations. Recommendations were made for changes in the guidelines applicable to these topics. Areas in which additional research is needed were identified.

Energy Technology Data Exchange (ETDEWEB)

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni/sub 2/Si, while Si is the diffusing species in CrSi/sub 2/. In Pd/sub 2/Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

Energy Technology Data Exchange (ETDEWEB)

This paper reports the results of leaching experiments conducted with and without Thiobacillus ferroxidans at the same conditions in solution. The extent of leaching of ZnS with Bacteria is significantly higher than that without bacteria at high concentrations of ferrous ions. A porous layer of elemental sulfur is present on the surfaces of the chemically leached particles, which no sulfur is present on the surfaces of the bacterially leached particles. The analysis of the data using the shrinking-core model shows that the chemical leaching of ZnS is limited by the diffusion of ferrous ions through the sulfur product layer at high concentrations of ferrous ions. The analysis of the data shows that diffusion through the product layer does not limit the rate of dissolution when bacteria are present. This suggests that the action of T.ferroxidans in oxidizing the sulfur formed on the particle surface is to remove the barrier to ...

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

International Nuclear Information System (INIS)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

International Nuclear Information System (INIS)

Depletion studies are used to infer the presence of mantles and to constrain grain evolutionary models in the diffuse interstellar medium. The presence of these mantles appears to be important in the evolution of the grains inside diffuse as well as dense clouds. In dense clouds where the element-to-element abundances sometimes differ from those found in diffuse clouds, empirical relationships are starting to emerge between gas abundances and various types of peculiar selective extinction. These peculiar extinction curves may be the results of nonvolatile mantle formation on grain cores or may reflect chemical differences due to variations in the intrinsic metalicity from one cloud to another. A simple model of the time evolution of a parcel of gas and dust as observed by the depletion of two elements is presented. Different studies of grain evolution and selective extinction are discussed and compared.

Energy Technology Data Exchange (ETDEWEB)

During the recrystallization by solid-phase-epitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, we propose that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing.

International Nuclear Information System (INIS)

N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code

Science.gov (United States)

X-ray diffraction offers a unique combination of advantages for kinetic study which include the non-destructive nature of the measurement, the use of bulk crystals, and the convenience of the experimental arrangements. These attributes and the availability of position-sensitive detectors and high-flux synchrotron radiation sources make this technique most useful for in situ, dynamical investigations. When using diffraction techniques to determine a diffusion coefficient, the principle of analysis entails a scattering theory and a kinetic model. The former allows the kinetic parameter(s) to be extracted from measured intensity, while the latter relates the kinetic parameter(s) to the diffusion coefficient(s). Three examples are demonstrated: (1) Palladium Silicide (Pd{sub 2}Si) Layer Growth on Silicon, (2) Decomposition of an Ni-12.5at%Si Superalloy, and (3) Short-range Ordering in Cu-Au Solid Solutions.

Energy Technology Data Exchange (ETDEWEB)

MCrAlY coatings are widely used on hot section components of gas turbines to provide hot corrosion and/or oxidation protection by formation of an oxide layer on the surface. As the protective oxide scale exfoliates during service, aluminum from the coating diffuses outward for reformation of the protective scale. Aluminum may also diffuse inward due to the differences in composition between the coating and the substrate. Thus, the coatings degrade due to oxidation, oxide scale spallation, and inward and outward diffusion of aluminum. Service life of these coatings is controlled by the aluminum content in the coating, operating temperature and start- shutdown cycles. In-service degradation of CoCrAlY and CoNiCrAlY coatings is presented. A procedure to predict the remaining service life of coatings under oxidizing conditions is discussed. (orig.) 12 refs.

International Nuclear Information System (INIS)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

Energy Technology Data Exchange (ETDEWEB)

Gamma-aminobutyric acid type A receptor-associated protein (GABARAP) belongs to a family of small ubiquitin-like adaptor proteins implicated in intracellular vesicle trafficking and autophagy. We have used diffusion-ordered nuclear magnetic resonance spectroscopy to study the temperature and concentration dependence of the diffusion properties of GABARAP. Our data suggest the presence of distinct conformational states and provide support for self-association of GABARAP molecules. Assuming a monomer-dimer equilibrium, a temperature-dependent dissociation constant could be derived. Based on a temperature series of {sup 1}H{sup 15}N heteronuclear single quantum coherence nuclear magnetic resonance spectra, we propose residues potentially involved in GABARAP self-interaction. The possible biological significance of these observations is discussed with respect to alternative scenarios of oligomerization.

Energy Technology Data Exchange (ETDEWEB)

In the last months several ballon and satellite experiments improved significantly our knowledge of cosmic ray (CR) spectra at high energy. In particular CREAM allowed to measure B/C, C/O and N/O ratios up to 1 TeV/n and PAMELA the anti p/p ratio up to 100 GeV with unprecedented accuracy. These measurements offer a valuable probe of CR propagation properties. We performed a statistical analysis to test the compatibility of these results, as well as other most significant experimental data, with the predictions of a new numerical CR diffusion package (DRAGON). We found that above 1 GeV/n all data are consistent with a plain diffusion scenario and point to well defined ranges for the normalization and energy dependence of the diffusion coefficient. (orig.)

Science.gov (United States)

... F.; Murray, R. W. J. Am. Chem. ... 14. Thackeray, J. W.; White, H. S.; Wrighton, M. SJ Phys. ... Dr. James S. Murday (1) Dr. Harold H. Singerman (i) ...

UK PubMed Central (United Kingdom)

Micro-electrodes sensitive to Cl- have been used to measure Cl- activities in the mucous layer on the mucosal surface of an isolated oesophageal preparation of the fresh-water teleost, Phoxinus phoxinus...Full Text Available

UK PubMed Central (United Kingdom)

X-ray diffuse scattering was measured from oriented stacks and unilamellar vesicles of dioleoylphosphatidylcholine lipid bilayers to obtain the temperature dependence of the structure and of the material...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

International Nuclear Information System (INIS)

Bench Scale methane cracking tests have been completed using a stack of ten whole SAES(R) St909 pellets - a 6 gram sample size. Methane was found to be the most difficult impurity to process and can impact diffuser operation.

Energy Technology Data Exchange (ETDEWEB)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the ...

International Nuclear Information System (INIS)

From the indoor radon problem arises a great challenge for the radiation protection of the population. The soil can be considered as the only source for high radon concentrations in buildings. The contribution of common building materials to high indoor concentrations with a range of 30 Bq/m"3 is negligible low. Therefore building materials for radon mitigation should be judged by their tightness against diffusive radon and not by their radon exhalation rate. Also isolation materials for mitigation should be radon tight. The radon diffusion coefficient describes the physical processes in relatively homogeneous samples. The diffusion coefficient D and the diffusion length R are very exactly determined by a self engineered measuring method. The range of D reaches from D = (0.0005 to 2.35) . 10"-"6 m"2/s for building materials and from D = (0.07 to < 10"-"6) . 10"-"6 m"2/s for isolation materials. ...

Energy Technology Data Exchange (ETDEWEB)

The suitability of the turbulent combustion flamelets model in order to predict the index of NO{sub x} production in turbulent flames of hydrogen diffusion is analyzed. In the flamelet approach, the turbulent flame is equivalent to a group of laminar flames submitted to a mechanical stretching which generates a chemical disequilibrium. This effect can be described by the stretching or by the scalar dissipation ratio. A numerical modeling is performed in order to evaluate the advantages of both approaches and to compare the behaviour of the NO{sub x} emission index with the experiments of Chen and Driscoll. This study shows that predictions of NO{sub x} emission indexes have a correct behaviour with respect to the Damkoehler number only when the scalar dissipation ratio is used as a parameter to describe the chemical state outside equilibrium. Predictions of the flamelet models are improving when the Damkoehler number increases. On the other hand, the absolute ...

Energy Technology Data Exchange (ETDEWEB)

The concentration of some organic acids in the atmosphere was determined using a wet effluent diffusion denuder-aerosol collector coupled with Ion Chromatography. Three organic acids and four inorganic anions were identified and quantified in the air sample, taken from the backyard of PSI. (author)

Science.gov (United States)

The U.S. government technical report is a primary means by which the results of federally funded

Science.gov (United States)

The U.S. government technical report is a primary means by which the results of federally funded

Energy Technology Data Exchange (ETDEWEB)

Uranium enrichment by gas centrifugation relies on the pressure diffusion of the isotopes when their gaseous mixture is submitted to the pressure diffusion in the strong radial pressure gradient due to the centrifugal force in a very rapidly rotating cylinder. To compute the isotope separation in a gas centrifuge, the viscous compressible Navier-Stokes equations are solved for the mixture, then the diffusion equations are solved for the isotopes. As far as the separation performance is concerned, the models deal with the steady state of the axi-symmetric gas motion in the rotating cylinder. The numerical tools are briefly presented: first, the MOLINA code which numerically solves the axi-symmetric gas motion in the specific conditions of rapid rotation by use of a change of variables suited to the high density gradient and by use of a Marker And Cell method; then, the diffusion equations solver which ...

International Nuclear Information System (INIS)

Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si_1_-_x_-_yGe_xC_y during 750"oC inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes #left brace#311#right brace# defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C_iC_s) pairing reaction that successfully simulates carbon suppression ...

UK PubMed Central (United Kingdom)

BackgroundPlant biologists have long speculated about the mechanisms that guide pollen tubes to ovules. Although there is now evidence that ovules emit a diffusible attractant, little...Full Text Available

International Nuclear Information System (INIS)

Radiation defects produced by helium implantation were used to shape profiles of palladium (Pd) and platinum (Pt) atoms in-diffusing (for 20 min at temperatures 600-800 deg. C) either from surface silicide (Pd_2Si, PtSi) or implanted layers. Results show that this procedure allows a strong localization of substitutional Pd and Pt at the depth where the damage produced by helium peaks. This results in local reduction of carrier lifetime by an almost ideal recombination centers - the acceptor level of substitutional Pd (E _c - 0.22 eV) or Pt (E _c - 0.23 eV). While optimum conditions for Pt in-diffusion are about 700 deg. C, Pd gives the best results already at lower temperatures (600 deg. C) where it also exhibits higher peak solubility. Both methods were used for optimization of turn-off properties of high power PiN diodes. The devices, where the lifetime was killed locally by Pd and Pt, exhibited similar trade-off between the static and ...

International Nuclear Information System (INIS)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms for the boron ...

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and dislocation loop were ...

International Nuclear Information System (INIS)

Radon has been recognized by various international health organizations as a major lung carcinogen. The onset of cellular carcinogenesis involves DNA damage to bronchi epithelial cells by particles emitted by radon progeny. Radon diffusion is an important release mechanism for radon that is produced inside a building material. The physical parameter that characterizes this process is the radon diffusion Coefficient D(m-2 s-l). The diffusion constant and Diffusion length has been measured as 2.15xl0- 6 m-2s-1, 1.01m for soil, 1.65x10-6m-2s-1, 0.89m for sand and 0.21x 10-6m-2s-1, 0.31m for crush aggregate saudi building materials respectively. The values are found to be minimum for crush aggregates, which shows that crush aggregate is least permeable to radon flow as compared with the other building materials studied. (author)

Energy Technology Data Exchange (ETDEWEB)

The volume diffusion of Mo in austenitic CrNiMo(N)-steels was studied using the sandwich method. Accordingly the interdiffusion coefficients of Mo were found to be independent of its concentration for the given steel composition with 12 to 19 wt.% Cr, 12 to 16 wt.% Ni, 0 to 2 wt.% Mo and 0 to 0.27 wt.% N and within the temperature range from 1283 to 1523 K. The diffusivity of Mo is greater than that of Cr, Ni and Fe in such steels. The diffusion parameters of Mo are decreased by alloying addition of nearly 0.25 wt.% N in steel; possibly as a result of lattice expansion or increasing vacancy concentration caused by N. Small variations in Cr and Ni initial contents of examined specimens showed negligible effect on the absolut values of interdiffusion coefficients of Mo. (orig.).

UK PubMed Central (United Kingdom)

In several regions of Czechoslovakia with intensive agricultural production, the correlation between the amount of nitrogen fertilizer applied and the nitrate content in groundwater has been recognized....Full Text Available

Energy Technology Data Exchange (ETDEWEB)

High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transient-enhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for long-range self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy ...

Energy Technology Data Exchange (ETDEWEB)

The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si{sup +}, 1 {times} 10{sup 16}/cm{sup 2}, implant. A 4{times} larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10{times} smaller diffusion relative to markers without the MeV Si{sup +} implant. This data demonstrates that a 2 MeV Si{sup +} implant injects vacancies into the near surface region.

Energy Technology Data Exchange (ETDEWEB)

(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of ...

Energy Technology Data Exchange (ETDEWEB)

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of ...

International Nuclear Information System (INIS)

Measurements have been made of radon ("2"2"2Rn), release from diverse quaternary samples collected from different sediment deposits in the Errachidia and Beni-Mellal areas (Morocco). The radon diffusion coefficient as one of some important parameters of radon transport in the soil has been measured using solid state nuclear track detectors (SSNTD). Radon #alpha#-activity, uranium content and radon exhalation rate have been determined in the studied samples. Uranium concentrations were found to vary from 0.14 to 9.52 ppm whereas the radon exhalation rate varied from 0.003 to 0.145 Bq x m"-"2 x h"-"1. A positive correlation has been found between radon exhalation rate and uranium content in the studied samples. The average radon diffusion coefficients were found to vary from (1.26 #+-# 0.09) x 10"-"6 m"2 x s"-"1 to (4.3 #+-# 0.36) x 10"-"6 m"2 x s"-"1. Furthermore, the correlation between "2"2"2Rn diffusion coefficient and ...

Energy Technology Data Exchange (ETDEWEB)

Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B{sup +}-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the {open_quotes}excess{close_quotes} interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO{sub 2} interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be discussed. {copyright} {ital 1999 American ...

Science.gov (United States)

SN 1987A: Soft X-Ray Intensity Ratio. 2002-12 to 2000-12. 2005-7 to 2002-12. Contours: 2002-12. (0.5 2 keV). (0.5 2 keV). Contours: 2005-7 ...

International Nuclear Information System (INIS)

To evaluate the diagnostic accuracy of Fuji computed radiography (FCR) in the detection of interstitial pulmonary infiltrates, FCR life-size images at a pixel size of 0.1 mm were compared with conventional radiographs taken on the same day. Seventeen radiologists assessed the radiographs and FCR images of 56 cases, including 39 cases of various interstitial lung diseases such as interstitial pneumonia, pulmonary abnormalities associated with collagen disease, sarcoidosis, multiple pulmonary metastases, diffuse panbronchiolitis and pulmonary emphysema, and 17 normal controls. All of the pulmonary abnormalities were confirmed by high resolution CT. Observer performance tests were carried out using receiver operating characteristic analysis. In 21 cases of increased pulmonary density revealed by high resolution CT, FCR was significantly superior to conventional radiographs in the detection of reticular or linear shadows. In 11 cases of subtle interstitial ...

Energy Technology Data Exchange (ETDEWEB)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in ...

Energy Technology Data Exchange (ETDEWEB)

We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO{sub 2} interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-{mu}m device characteristics, such as V{sub th} and I{sub dsat}, for which the differences between ...

Energy Technology Data Exchange (ETDEWEB)

Diffuse {gamma}-ray emission produced by the interaction of cosmic-ray particles with matter and radiation in the Galaxy can be used to probe the distribution of cosmic rays and their sources in different regions of the Galaxy. With its large field of view and long observation time, the Milagro Gamma Ray Observatory is an ideal instrument for surveying large regions of the Northern Hemisphere sky and for detecting diffuse {gamma}-ray emission at very high energies. Here, the spatial distribution and the flux of the diffuse {gamma}-ray emission in the TeV energy range with a median energy of 15 TeV for Galactic longitudes between 30{sup o} and 110{sup o} and between 136{sup o} and 216{sup o} and for Galactic latitudes between -10{sup o} and 10{sup o} are determined. The measured fluxes are consistent with predictions of the GALPROP model everywhere except for the Cygnus region (l {element_of} [65{sup o}, 85{sup o}]). For the ...

British Library Electronic Table of Contents (United Kingdom)

Transverse glow discharges in supersonic air and methane flows are studied both experimentally and theoretically. The experiments show that a diffuse volume discharge filling the whole cross section of the flow can easily be initiated in air, whereas a diffuse discharge in a methane flow shows a tendency to transition into a constricted mode. The electron transport coefficients (mobility and drift velocity) and the kinetic coefficients (such as collisional excitation rates of the vibrational levels of a methane molecule, as well as dissociation and ionization rates) are calculated by numerically solving the Boltzmann equation for the electron energy distribution function. The calculated coefficients are used to estimate the parameters of the plasma and the electric field in the positive co...

Energy Technology Data Exchange (ETDEWEB)

Effect of strain rate, temperature and grain size in the climb-controlled dislocation creep region for AZ31 magnesium alloy was examined at lower temperature of {proportional_to}473 K. The flow stress was not affected by the difference in grain size. The strain rate sensitivity, m, was obtained 0.14 and 0.2 at low temperatures in high strain rate and at high temperature in low strain rate, respectively. It was found that the notion of effective diffusivity could express the dominant diffusion process during climb-controlled dislocation creep behavior uniquely. (orig.)

Energy Technology Data Exchange (ETDEWEB)

The role of natural enemies in the regulation of populations is one of the major questions facing population ecologists. Simplification have led to two theoretical ways of incorporating the role of natural enemies in single ecological models: diffusion models and patch-type models. The predictions of the models are different because of the way variability is incorporated. Three equations are presented for diffusion models and one for patch models. Since the two types of models apply at different combinations of spatial and temporal scales, the right model(s) to choose for a particular study requires careful assessment. A continuing dialogue between experimentalists and theoreticians will lead to a better understanding of natural systems such as those that occur in biological control.

Energy Technology Data Exchange (ETDEWEB)

We present a numerical method for computing diffusive transport on a surface derived from image data. Our underlying discretization method uses a Cartesian grid embedded boundary method for computing the volume transport in region consisting of all points a small distance from the surface. We obtain a representation of this region from image data using a front propagation computation based on level set methods for solving the Hamilton-Jacobi and eikonal equations. We demonstrate that the method is second-order accurate in space and time, and is capable of computing solutions on complex surface geometries obtained from image data of cells.

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

International Nuclear Information System (INIS)

Experimentally it is shown that a movable grounded metallic plate placed inside a multi-dipole magnetic cage can vary the diffused plasma parameters such as density, plasma potential and electron temperature. Plasma is solely produced in the source section of a double plasma device by a dc hot filament discharge and a low-density plasma is produced in the target section by local ionization of neutral gas by the high energetic electrons coming from the source section. A grounded movable stainless steel plate is inserted in the target section of the device. The floating potential of the plate also changes depending on the position of the plate inside the magnetic cage.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

Science.gov (United States)

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

Energy Technology Data Exchange (ETDEWEB)

Role of ballooning effect in toroidal plasmas on the transient transport problems is investigated. Due to the mode localization along the magnetic field line, a meso scale appears in a radial correlation length of fluctuating fields. This scale length introduces the interference of the gradient and flux in different radial locations. For the fluctuation which gives the gyro-Bohm-like diffusion in a stationary state, this long radial correlation of the fluctuating field causes a fast propagation of response against a rapid transient perturbation. Upper bound of transient thermal diffusivity is derived. (author)

Energy Technology Data Exchange (ETDEWEB)

Measurements of the expansion rate of pure-electron plasmas have been performed on the Electron Diffusion Gauge (EDG) device at background helium gas pressures in the 5 x 10(superscript -8) Torr to 1 x 10(superscript -5) Torr range, where plasma expansion due to electron-neutral collisions dominates over plasma expansion due to trap asymmetries. It is found that the expansion rate, defined as the time rate of change of the particles' mean-square radius, scales approximately linearly with pressure and inversely as the square of the magnetic field strength in this regime, in agreement with classical predictions.

International Nuclear Information System (INIS)

In this paper the diffusion of tritiated water vapor into concrete walls is studied to evaluate tritiated water retention capacity of a fusion reactor concrete building. Using a model of the tritiated water diffusion determined form experimental results, depth profiles of tritiated water in concrete are calculated in the case of being exposed to air containing tritiated water vapor during the normal operational condition of a fusion reactor. A 0.5-m-thick concrete is sufficient for reactor hall walls from a viewpoint of the tritium containment.

Energy Technology Data Exchange (ETDEWEB)

We provide two examples to illustrate how electronic structure calculations contribute to our understanding of vacancies and their role in determining material properties. Diffusion and elctromigration in aluminium are known to depend strongly on vacancies. Electronic structure calculations show that the vacancy-impurity interaction oscillates with distance, and this leads to an explanation for both the increased elctromigration resistance and the slow impurity diffusion for copper in aluminium. Calculations of vacancies in plutonium have been used in conjunction with positron annihilation lifetime measurements to identify the presence of helium-filled vacanies. Helium stabilization of vacancies can provide the precursors for subsequent vacancy-related changes in materials properties.

CERN Document Server

We provide a both qualitative and quantitative comparison among different approaches aimed to solve the problem of non-linear diffusive acceleration of particles at shocks. In particular, we show that state-of-the-art models (numerical, Monte Carlo and semi-analytical), even if based on different physical assumptions and implementations, for typical environmental parameters lead to very consistent results in terms of shock hydrodynamics, cosmic ray spectrum and also escaping flux spectrum and anisotropy. Strong points and limits of each approach are also discussed, as a function of the problem one wants to study.

Energy Technology Data Exchange (ETDEWEB)

Diffusion of radon in a bed of activated charcoal is described by diffusion equations. An analytical solution of these equations is presented for the case of constant radon concentration in the atmosphere. The solutions are given separately for short term and long term exposure. An analytical form of the calibration constant f for long term exposure and constant radon concentration in air, was found. A numerical method and computer code based on the method of finite elements is developed for the case of variable radon concentration in air. This program simulates radon adsorption by the activated charcoal bed, enabling determination of sensitivity. The dependence of sensitivity on different parameters, such as temperature, thickness of the charcoal, etc. was studied using this program. (orig.) 10 refs.

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops and responsible for ...

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Cementitious materials provide an ideal geochemical environment (e.g., high pH pore fluids and large surface areas for sorption) for immobilizing nuclear waste. The inclusion of reducing agents, such as blast furnace slag (BFS) can immobilize radionuclides by forming of solid sulfide phases. Thermodynamic calculations using the MINTEQ geochemical computer code indicate the elemental sulfur present in BPS reacts with the highly mobile pertechnetate anion (TcO{sub 4}{sup -}) anion to form an insoluble technetium sulfide phase (Tc{sub 2}S{sub 7(s)}). Initially, the waste form very effectively immobilizes technetium. However, as oxygen diffuses into the waste form, an outer zone of oxidized concrete and a shrinking core of reduced intact concrete develops. Oxidation of sulfur in the outer zone results in increased technetium concentrations in the pore fluid because Tc{sub 2}S{sub 7(a)} oxidizes to the mobile TcO{sub 4}{sup -} anion. The TcO{sub 4}{sup -} anion can then ...

International Nuclear Information System (INIS)

Cylindrical test pieces of concrete are used for measurements of "2"2"2Rn exhalation rates. Except one flat end surface of a test piece, other parts of its exteriority are covered with sealant. Radon atoms can escape only through its end surface from the interior into the outside air. This treatment makes the radon transport in the concrete one dimensional phenomena. The piece is put in an airtight container. Time variations of radon concentrations in the air of the container are measured with a plane multiwire-electrode ionization chamber. From this result, the radon areal exhalation rate is deduced for the piece. Exhalation rates are measured for four pieces with different length. Then, the diffusion coefficient is obtained for radon in the concrete as (5.0 #+-# 1.0) x 10"-"8m"2s"-"1 (a one-block method). A two-block method has been invented to obtain simultaneously values of three parameters: diffusion coefficient, porosity of concrete, and ...

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left brace#311#right brace# defects ...

International Nuclear Information System (INIS)

The Neutral Beam Test Facility (NBTF) to be realized in Padoa will test the Neutral Beam Injection (NBI), one of the Heating and Current Drive Systems foreseen for ITER. The NBI is based on the acceleration of hydrogen or deuterium negative ions up to 1 MeV. This work has been aimed at assessing the tritium release from the NBTF in order to provide data for the safety analysis. In particular, the diffusion of the tritium through the neutral beam target material (the CuCrZr alloy calorimeter panels) has been assessed by using literature data of the diffusion coefficient. The tritium generated inside the calorimeter panels moves into both the vacuum and water side: the tritium diffusion flux has been evaluated during the beam-on (200 deg. C) and the beam-off (20 deg. C) phases of the NBTF experiments consisting of an interim campaign and a final test. The penetration depth of the tritium through the 2 mm thick CuCrZr alloy ...

International Nuclear Information System (INIS)

Background. In multiple myeloma 5 different infiltration patterns can be differentiated: 1. Normal appearance of bone marrow, 2. focal involvement, 3. homogeneous diffuse infiltration, 4. combined diffuse and focal infiltration, 5. 'salt-and pepper' pattern with inhomogeneous bone marrow with interposition of fat islands. Methods. For the fast and total acquisition of all patterns a combination of a T1-weighted spin echo sequence and a fat suppression technique is superior. The focal involvement is clearly demonstrated as areas of high signal intensity on e.g. STIR images. Diffuse involvement can be quantified objectively by calculation of the percentage of signal intensity increase after contrast material injection. MRI is superior to X-ray in focal and diffuse involvement. With ultrafast sequences a 'screening' of the whole red bone marrow as for myeloma infiltration is possible. Prognosis. In ...

Science.gov (United States)

The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be ...

International Nuclear Information System (INIS)

Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high nitrogen contents are introduced in the outermost layer of the steel. ...

Energy Technology Data Exchange (ETDEWEB)

We have developed a kinetic Monte Carlo (kMC) simulator that links atomic migration and binding energies determined primarily from first principles calculations to macroscopic phenomena and laboratory time scales. Input for the kMC simulation is obtained from a combination of ab initio planewave pseudopotential calculations, molecular dynamics simulations, and experimental data. The simulator is validated against an extensive series of experimental studies of the diffusion of B spikes in self-implanted Si. The implant energy, dose, and dose rate, as well as the detailed thermal history of the sample, are included. Good agreement is obtained with the experimental data for temperatures between 750 and 950 C and times from 15 to 255 s. At 1050o C we predict too little diffusion after 105 s compared to experiment: apparently, some mechanism which is not adequately represented by our model becomes important at this temperature. Below 1050o C, the ...