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Photoconducting properties of ultraviolet detectors based on GaN and Al_1_-_xGa_xN films grown by ECR-MBE

GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1997-12-31

2

Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1996-12-02

3

Photoresponsivity of ultraviolet detectors based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloys

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the ...

2005-06-01

4

Photoresponsivity of ultraviolet detectors based on In_xAl_yGa_1_-_x_-_yN quaternary alloys

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part ...

2000-08-07

5

Ion beam induced charge imaging of epitaxial GaN detectors

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1_-_x_-_yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 #mu#m In_xAl_yGa_1_-_x_-_yN alloy grown on 0.5-1.0 #mu#m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1_-_x_-_yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1_-_x_-_yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with ...

2000-08-07

6

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

We report the use of ion beam induced charge imaging to characterise the charge signal uniformity of epitaxial gallium nitride radiation detectors. The detectors were fabricated from 2 {mu}m thick semi-insulating gallium nitride, grown by MOCVD on a sapphire substrate. A carrier concentration of 1.4x10{sup 15} cm{sup -3} was measured using capacitance-voltage measurements. Ion beam induced charge imaging was carried out with a 2 MeV alpha particle beam focussed to a 3 {mu}m diameter and raster scanned across the device. The resulting ion beam images show excellent charge signal uniformity in this material with no evidence of material defects or polycrystalline structure on the micrometer length scale. No evidence of charge signal trapping was observed in these devices.

2004-09-21

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Low-Resistance Nonalloyed Ti/Al Ohmic Contacts on N-Face n-Type GaN via an {O}_{2} Plasma Treatment

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping showed an abrupt ...

2010-02-01

8

Ab initio-based approach on initial growth kinetics of GaN on GaN (001)

Not Available

2011-02-01

9

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

2007-01-01

10

A study on yellow luminescence in O and C ion implanted GaN

On the relation between morphology and elastic properties in amorphous columnar thin films

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

2008-08-01

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Theoretical approach to initial growth kinetics of GaN on GaN(001)

The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, i.e., position of particles (e.g., atoms or molecules) and their interatomic potential(s), with continuum mechanics principles. This work concerns the application of ...

2002-07-07

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British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

2007-01-01

13

Generation and relaxation of microstrains in GaN nanocrystals under extreme pressures

Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping

Nanocrystalline powders of GaN with grain sizes ranging from 2 to 30 nm were examined under high external pressures by in situ diffraction techniques in a diamond anvil cell at DESY (HASYLAB, Station F3). The experiments on densification of pure powders under high pressure were performed without a pressure medium. The mechanism of generation and relaxation of internal strains and their distribution in nanoparticles was deduced from Bragg reflections recorded in situ under high pressures at room temperature. The microstrain was calculated from the full-width at half-maximum (FWHM) values of the Bragg lines. It was found that microstrains in GaN crystallites are generated and subsequently relaxed by two mechanisms: generation of stacking faults and change of the size and shape of the grains occurring under external stress. (author)

2001-09-23

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Materials design for semiconductor spintronics by ab initio electronic-structure calculation

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

2000-07-01

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Auxin Transport Is Required for Hypocotyl Elongation in Light-Grown but Not Dark-Grown Arabidopsis1

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping ...

2003-04-01

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Influence of low temperature on the photosynthetic intensity of winter wheat grown at different mineral nutrition

Many auxin responses are dependent on redistribution and/or polar transport of indoleacetic acid. Polar transport of auxin can be inhibited through the application of phytotropins such as 1-naphthylphthalamic...Full Text Available

1998-02-01

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BBSRC CASE studentship: The impact of nutrition on the gluten composition and processing quality of wheat

Bulgarian 1974. Bulgaria Gramatikova, Kh. Salcheva, G. Bylgarska Akademiya

1974-10-14

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Microscopic Origin of the Phenomenological Equilibrium ''Doping Limit Rule'' in n -Type III-V Semiconductors

DescriptionThe objective of this project is to relate the processing quality of wheat to the composition of the developing and mature grain using material grown under a range of nutrient regimes including long term organic and fertilised systems from the Rothamsted Broadbalk experiment, variety trials and organically grown wheat. Preliminary studies have indicated substantial differences in the transcriptome profiles of wheat grown with artificial fertiliser and with organic fertiliser on Broadbalk and tru [continued...

2008-01-31

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Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

2000-02-07

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AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

2009-08-15

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British Library Electronic Table of Contents (United Kingdom)

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

2009-01-01

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Characterisation of thin films by phase modulated spectroscopic ellipsometry

Oxidation of ethane by an Acremonium species.

A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (#chi#"2) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done on (i) ion-implanted Si-wafers to ...

2009-12-01

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Influence of Pythium oligandrum Biocontrol on Fungal and Oomycete Population Dynamics in the Rhizosphere?

Ethane oxidation was studied in ethane-grown resting cells (mycelia) of an Acremonium sp. and in cell-free preparations of such mycelia. From resting cell experiments evidence was found for a pathway...Full Text Available

1976-07-01

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Growth of ytterbium tartrate trihydrate crystals in silica and agar-agar gels and their characterization

Fungal and oomycete populations and their dynamics were investigated following the introduction of the biocontrol agent Pythium oligandrum into the rhizosphere of tomato plants grown...Full Text Available

2009-07-01

25

British Library Electronic Table of Contents (United Kingdom)

Single crystals of ytterbium tartrate trihydrate have been grown by gel method using silica and agar-agar gels as media of growth. The medium of growth influences the morphology of grown crystals, silica gel yielding single and polycrystalline in the form of spherulites whereas agar-agar gel leading to growth of single and twinned crystals. Materials grown as single crystals have been characterized by using optical and scanning electron microscopy (SEM), EDAX, XRD, FT-IR, CHN and thermogravimetric techniques. The stoichiometry of the grown single crystals is suggested to be Yb(C4H4O6) (C4H5O6).3H2O. The FT-IR spectrum shows the presence of singly as well as doubly ionized tartrate ligands. Results of thermal analysis indicate that the material is thermally stable up to a temperature of 200...

2006-01-01

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GENETIC STUDIES OF PIGMENTATION IN ...

Excitonic transitions in InGaP/InAlGaP strained quantum wells

... Strains Smith and -aybush were both grown in broth containing from 0.1 to 50 pg/ml of acriflavin, acridine orange, or proflavin. ...

1966-05-01

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ELECTRICAL AND OPTICAL PROPERTIES OF LEAD-TIN ...

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

1993-08-30

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In Vivo Determination of Parameters of Nitrate Utilization in Wheat (Triticum aestivum L.) Seedlings Grown with Low Concentration of Nitrate in the Nutrient Solution ¹

... Abstract : Single crystals of Pb(x)Sn(1-x)Te alloy have been grown with o = or thin film evaporator. ...

1969-09-03

29

Crystal growth, structural and optical characterization of a semi-organic single crystal for frequency conversion applications

Six genotypes of winter wheat (Triticum aestivum L.) differing in grain protein concentration were grown on a nutrient solution containing low concentrations of NO₃⁻...Full Text Available

1981-12-01

30

The Study of Phosphors Efficiency and Homogeneity using a Nuclear Microprobe

Single crystals of semi-organic L-histidine hydrobromide have been grown by slow evaporation technique from a mixture of L-histidine and hydrobromic acid in aqueous solution at ambient temperature. From high-resolution X-ray diffraction analysis, the crystalline perfection of the grown crystal has been studied. Single crystal X-ray diffraction analyses, Nuclear Magnetic Resonance spectral analysis, Thermo-Gravimetry (TG), Differential Thermal Analysis (DTA) and hardness test have been employed to characterize the as-grown crystals. The UV cutoff wavelength of the grown crystal is below 300 nm and has a wide transparency window, which is suitable for second harmonic generation of laser in the blue region. Nonlinear optical characteristics have been studied using Q switched Nd:YAG laser (#lambda#=1064 nm). The second harmonic generation conversion efficiency of the grown crystals ...

2010-12-15

31

Imaging of salt structure; Gan`enso kozo no imaging

Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output dependence on the energy deposition of heavy ions. The emission yield ...

2000-12-08

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Band parameters for III - V compound semiconductors and their alloys

Due to the improvement of algorithm and the advancement of calculation performance, the imaging by depth migration before stacking is being put into practice from the viewpoint of both calculation cost and accuracy. A lot of imaging examples have been already reported from the survey areas with complicated velocity structures, such as the North Sea and the Gulf of Mexico. Effectiveness of the method has been confirmed. For imaging techniques in Japan National Oil Corporation and Japan Petroleum Exploration Co., Ltd., high-speed depth migration before stacking and high efficiency velocity structure estimation technique have been investigated. This paper describes necessary care to be taken when using depth focusing analysis (DFA) for correcting a velocity model, as an interim stage of case study. The results of depth migration before stacking using dip moveout (DMO) velocity were further inferior to the section obtained by the migration after tracking. Tendency of velocity errors was ...

1996-10-01

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Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American Institute of ...

2001-06-01

34

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

2011-01-01

35

Point defects in dilute nitride III-N-As and III-N-P

Watchdog Calls on USDA to Boost Transparency in Organic Governance

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

2006-04-01

36

Wastenet

...qualified and who were under consideration at the time, USDA Secretary Tom Vilsack chose an animal husbandry specialist employed by one of the largest organic livestock product marketers in the country. While this appointee had grown up on a conventional farm, her immediate occupation is not that of ...

37

Tumor vascular permeability factor stimulates endothelial cell growth and angiogenesis.

Transport of Indole-3-Acetic Acid during Gravitropism in Intact Maize Coleoptiles ¹

Vascular permeability factor (VPF) is an Mr 40-kD protein that has been purified from the conditioned medium of guinea pig line 10 tumor cells grown in vitro, and increases fluid permeability from blood...Full Text Available

1989-11-01

38

Role of Calcium in Serine Transport into Tobacco Cells

We have investigated the transport of tritiated indole-3-acetic acid (IAA) in intact, red light-grown maize (Zea mays) coleoptiles during gravitropic induction and the subsequent development...Full Text Available

1990-12-01

39

Purification and properties of an endo-1,4-beta-glucanase from Clostridium josui.

The transport of serine into tobacco (Nicotiana tabacum L. var. Xanthi) cells grown in liquid medium was studied. Serine transport was maximal below pH 4.0. A time-dependent stimulation...Full Text Available

1978-12-01

40

Primary structure and regulation of vegetative specific genes of Dictyostelium discoideum.

An enzyme active against carboxymethyl cellulose (CMC) was purified from the stationary-phase-culture supernatant of Clostridium josui grown in a medium containing ball-milled cellulose. The purification...Full Text Available

1989-07-01

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Phytochrome-induced Increase of Fluorescein Translocation in Mung Bean Hypocotyls

We have examined the expression and structure of several genes belonging to two classes of vegetative specific genes of the simple eukaryote, Dictyostelium discoideum. In amebae grown on bacteria, deactivation...Full Text Available

1989-12-11

42

New views on the hypothesis of respiratory cancer risk from soluble nickel exposure; and reconsideration of this risk's historical sources in nickel refineries

Moderate doses of red (660 nanometer) irradiation cause a rapid increase in the translocation of fluorescein in dark-grown mung bean hypocotyl (Vigna radiata L.) segments. The increase...Full Text Available

1978-07-01

43

Mechanical strain enhances survivability of collagen micronetworks in the presence of collagenase: implications for load-bearing matrix growth and stability

IntroductionWhile epidemiological methods have grown in sophistication during the 20^thcentury, their application in historical occupational (and environmental) health...Full Text Available

44

MOCVD-grown Al /SUB 0. 5/ In /SUB 0. 5/ P-Ga /SUB 0. 5/ In /SUB 0. 5/ P double heterostructure lasers optically pumped at 90 K

There has been great interest in understanding the methods by which collagen-based load-bearing tissue is constructed, grown and maintained in vertebrate animals. To date, the responsibility for this...Full Text Available

2009-09-13

45

Lethal protein produced in response to competition between sibling bacterial colonies

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

1982-12-01

46

Increase in Internode Length of Phaseolus lunatus L. Caused by Inoculation with a Nitrate Reductase-deficient Strain of Rhizobium sp. ¹

Sibling Paenibacillus dendritiformis bacterial colonies grown on low-nutrient agar medium mutually inhibit growth through secretion of a lethal factor. Analysis of secretions reveals...Full Text Available

2010-04-06

47

High Efficiency Solar Cell on Low Cost Metal Foil Substrate

Dramatic differences in the height of lima beans (Phaseolus lunatus L.) treated with two different Rhizobium strains were studied. Lima beans were grown in Perlite...Full Text Available

1981-01-01

48

Generation of a proton motive force by histidine decarboxylation and electrogenic histidine/histamine antiport in Lactobacillus buchneri.

During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...

49

Friction properties of WS{sub 2}/graphite fluoride thin films grown by pulsed laser deposition

Lactobacillus buchneri ST2A vigorously decarboxylates histidine to the biogenic amine histamine, which is excreted into the medium. Cells grown in the presence of histidine generate both a transmembrane...Full Text Available

1993-05-01

50

Finding Autonomy in Birth*

Graphite fluoride (CF{sub x}) is investigated as an additive for WS{sub 2} thin films to reduce its sensitivity to moisture. The films are grown onto hardened 440C stainless steel disks by pulsed laser deposition using the 248 nm line from an excimer laser. Substrate temperature and additive concentration are varied to control film chemistry and crystal structure. The effect of relative humidity (i.e., < 1 to 85% RH) on friction is evaluated. Coatings grown at RT from targets with a low concentration of CF{sub x} exhibit ultra-low friction (ULF) behavior in dry air (i.e., {mu} {<=} 0.01), but friction increases with RH. Mechanisms for the ULF behavior are proposed which suggest that further reductions in friction are possible. Films grown at 300 C or with higher concentrations of CF{sub x} are relatively insensitive to humidity, but have more typical friction coefficients ({mu} {<=} 0.04) in dry air. (orig.)

1995-12-01

51

Exploring the 2D to 3D dimensionality crossover in thin iron films

Over the last several years, as cesarean deliveries have grown increasingly common, there has been a great deal of public and professional interest in the phenomenon of women ‘choosing’...Full Text Available

2009-01-01

52

Evidence for the Regulation of Phytochrome-mediated Processes in Bean Roots by the Neurohumor, Acetylcholine ¹

The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the films on tungsten. Recent results on Fe films which are ...

2006-05-15

53

Electrogenic malate uptake and improved growth energetics of the malolactic bacterium Leuconostoc oenos grown on glucose-malate mixtures.

Using pharmacological and chromatographic techniques, it was shown that acetylcholine was present in all organs of both light- and dark-grown mung bean seedings (Phaseolus aureus)....Full Text Available

1970-12-01

54

Cyberpharmacies and the role of the US Food And Drug Administration

Growth of the malolactic bacterium Leuconostoc oenos was improved with respect to both the specific growth rate and the biomass yield during the fermentation of glucose-malate mixtures as compared with...Full Text Available

1992-08-01

55

Current developments in wood-polymer composites

The sale of consumer products over the Internet has grown rapidly, including the sale of drugs. While the growth in online drug sales by reputable pharmacies is a trend that may provide benefits to...Full Text Available

56

Cumulative effects of protracted irradiation of Chernobyl exclusive zone plants

This investigation clearly demonstrates that through partial impregnation techniques wood-polymer composites can be formed from the Pinus species grown in South Africa with a considerable saving in monomer costs without sacrificing the important physical properties of these materials.

1976-06-17

57

Characterization and nanopatterning of Ni{sub 2}MnIn Heusler films

The biological and radiobiological peculiarities of seeds and seedlings of the Rumex confertus and Lupinus polycolor plants, which grown during several generations in plots with different level of radionuclide pollution of the Chernobyl exclusive zone have been investigated.

2005-01-01

58

Branch morphology in young poplar clones on floodplain sites in ...

The Heusler alloy Ni{sub 2}MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si{sub 3}N{sub 4} membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the films grown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR). The almost perfect lattice match between InAs and Ni{sub 2}MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam resists, the samples are grown at ...

2008-07-01

59

Anaerobic Growth Yields of Aerobacter cloacae and Escherichia coli

Sep 28, 2011 ... Description: Four Populus clones were grown in central Missouri for 2 years at 1 x 1 m spacing to study total biomass production on floodplain ...

60

Albumin interacts specifically with a 60-kDa microvascular endothelial glycoprotein.

Aerobacter cloacae UW-C83 and Escherichia coli K-12 were grown under various anaerobic environments. Y_atp values were calculated by determination...Full Text Available

1967-10-01

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61

Polycrystalline MBE-grown GaAs for solar cells

Confluent monolayers of microvascular endothelial cells, derived from the rat epididymal fat pad and grown in culture, were radioiodinated by using the lactoper-oxidase method. Their radioiodinated...Full Text Available

1988-09-01

62

Point defect supersaturation and enhanced diffusion in SPE regrown silicon

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

1997-02-01

63

Point defect supersaturation and enhanced diffusion in SPE regrown silicon

Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

1984-01-01

64

High-optical-quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas-source molecular-beam epitaxy

Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

65

Effects of FIB milling and pre-straining on the microstructure of directionally solidified Mo pillars: a Laue diffraction analysis

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

1989-11-01

66

Intracellular concentrations and metabolism of carbon compounds in tobacco callus cultures: Effects of light and auxin

White beam Laue micro-diffraction was performed on directionally solidified, single-crystal Mo pillars in the as-grown state, after focused ion beam (FIB) milling and after pre-straining. The Laue diffraction peaks from the as-grown pillars are very sharp and show no broadening, similar to those from single-crystal Si wafers. Significant broadening and streaking of the peaks occurred after FIB milling and pre-straining, indicative of the damage these treatments induce in the nearly perfect crystal structure of the directionally solidified Mo pillars.

2010-05-01

67

Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell

Callus cultures derived from pith tissue of Nicotiana tobacum were grown on two media either under continuous illumination or in complete darkness. The first medium limited greening ability of callus grown in the light (3 milligrams per liter naphthalene acetic acid, 0.3 milligram per liter 2-isopentenylaminopurine, Murashige and Skoog salts, and 2% sucrose). The second medium encouraged chlorophyll synthesis (greening) though not shoot formation (0.3 milligram per liter naphthalene acetic acid; 0.3 milligrams per liter 2-isopentylaminopurine). To measure intracellular concentrations, calli were grown for 15 days on these standard media containing (U-/sup 14/C)sucrose. The dry weight proportions of the calli (as a fraction of fresh weight) and many metabolite concentrations nearly doubled in light-grown cells compared to dark-grown cells and increase 30 to 40% on low-auxin media ...

1981-10-01

68

Transmission electron microscopy of strained In/sub y/Ga/sub 1//sub -//sub y/As/GaAs multiquantum wells: The generation of misfit dislocations

Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 ...

1992-12-01

69

Zinc-blende--wurtzite polytypism in semiconductors

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post-growth ...

1989-05-01

70

Quantitative analysis of sulfur forms of coal and the pyrolysis behavior of sulfur compounds; Sekitanchu no io kagobutsu no keitaibetsu gan`yuryo no teiryo to sono netsubunkai kyodo

The zinc-blende (ZB) and wurtzite (W) structures are the most common crystal forms of binary octet semiconductors. In this work we have developed a simple scaling that systematizes the {ital T}=0 energy difference {Delta}{ital E}{sub W{minus}ZB} between W and ZB for all simple binary semiconductors. We have first calculated the energy difference {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) for AlN, GaN, InN, AlP, AlAs, GaP, GaAs, ZnS, ZnSe, ZnTe, CdS, C, and Si using a numerically precise implementation of the first-principles local-density formalism (LDF), including structural relaxations. We then find a {ital linear} scaling between {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) and an atomistic orbital-radii coordinate {ital {tilde R}}({ital A},{ital B}) that depends only on the properties of the free atoms {ital A} and {ital B} making up the binary compound {ital AB}. Unlike classical structural coordinates (electronegativity, atomic sizes, electron ...

1992-10-15

71

Energy gap and bond lengths of Al_xGa_yIn_1_-_x_-_yN, Al_xGa_yIn_1_-_x_-_yP and Al_xGa_yIn_1_-_x_-_yAs quaternary alloys

As part of the studies on coal utilization basics, considerations were given on quantification of sulfur forms of coal and the pyrolysis behavior of sulfur compounds. With the temperature raising oxidation method, a thermo-balance was connected directly to a mass analyzer, and the coal temperature was raised at a rate of 5{degree}C per minute and gasified. Peak division was performed on SO2 and COS production to derive sulfur forms of coal. Using the slow-speed pyrolysis method, production rates of H2S, COS, SO2 and mercaptans were measured at a temperature raising rate of 20{degree}C per minute. Sulfur content in char was also measured. With the quick pyrolysis method, a Curie point pyrolyzer was connected directly to a gas chromatograph, by which secondary reaction is suppressed, and initial pyrolytic behavior can be tracked. All kinds of coals produce a considerable amount of SO2 in the slow-speed pyrolysis, but very little in the quick pyrolysis. Instead, H2S and mercaptans are ...

1996-10-28

72

Effects of matrix resin and fiber content on behavior of fatigue crack propagation in continuous-fiber-mat reinforced CP-resin composites; Renzoku sen`i mat kyoka CP resin fukugozai no hiro kiretsu denpa tokusei ni oyobosu bozai oyobi sen`i gan`yuritsu no eikyo

We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

73

In-plane aligned CeO[sub 2] films grown on amorphous SiO[sub 2] substrates by ion-beam assisted pulsed laser deposition

The purpose of the present work is to investigate the effects of matrix resin and fiber content on the behavior of fatigue crack propagation in continuous-glass-fiber-mat reinforced CP-resin composites. For this purpose, ductile matrix resin and brittle one are used. These two kinds of resins have the characteristic that the elastic modulus and tensile strength are nearly the same with each other while the elongation is different. The composite specimens are made of these resins and continuous grass fiber mat of 20 wt.% and 60 wt% fiber contents. The fatigue crack propagation test was conducted by using the tapered DCB specimens to control the stress intensity factor range, {delta}K, during the test. The results obtained are as follows; (1) The relation between the crack propagation rate, da/dN, and {delta}K for all the present materials is shown by a straight line in logarithmic representation. (2) For the composites of 20 wt.% fiber content, the da/dN of the ductile matrix composite ...

1996-05-15

74

Impact of harvesting time on ultimate methane yield of switchgrass grown in eastern Canada

Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.

1994-10-17

75

Growth of tailored sillenite photorefractives for optical correlation

European research in green energy production from crops has resulted in the development of full scale bioreactors that use energy crops as feedstock. Switchgrass has been touted as one of the most promising crops for energy production among several perennial grass species grown under moderate to hot climates. However, few studies have been conducted in colder climate conditions. This study examined the mesophilic methane yield of switchgrass grown under the cooler growing conditions that exist in northeastern North America. In 2007, switchgrass was harvested in late July, August and September and conserved as silage. The regrowth of plots harvested in late July was also harvested in late September as a two-cut strategy. A 30 L small-scale laboratory digester was used to anaerobically digest the switchgrass silage samples. Specific methane yield decreased considerably with advancing plant development, but was similar between the first harvest in ...

2010-07-01

76

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

Photorefractives, in general, are among the most promising materials solutions to real time optical correlation. Applications include military target recognition and civilian robotic vision. Crystals of sillenite structure photorefractives, Bi12XO20, where X equals Si, Ge, or Ti, have been grown by melt techniques and in the case of bismuth silicon oxide (BSO) and bismuth titanium oxide (BTO) by the hydrothermal method of high-temperature/high-pressure solution growth. The two growth methods are discussed and crystals grown by the two methods are compared in this paper. Optical absorption and TSC studies show that hydrothermal BSO is essentially free of the native antisite Bi defect which usually acts as a donor. These studies also show that the trap density is greatly reduced in hydrothermal material. Preliminary experiments show that hydrothermal BTO crystals have improved properties over melt grown samples. Al and P act ...

1995-06-01

77

Comparative transport studies in Bridgman and sublimation grown 9,10-diphenylanthracene single crystals

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended optical response was not detected, most ...

2004-12-21

78

Al/sub 0. 3/Ga/sub 0. 7/P/sub 0. 01/As/sub 0. 99/ GaAs laser heterostructures grown by molecular beam epitaxy

To improve organic electronic applications, knowledge about microscopic mechanisms determining the charge carrier mobilities is pivotal. 9,10-Diphenylanthracene (DPA) has been identified as model system to study those correlations due to its high electron and hole mobilities at room temperature and its complex structural phase behaviour. We demonstrate our temperature dependent Time-Of-Flight data on single crystals grown by vapor phase transport (VPT) and by Bridgman growth technique. Both preparation techniques revealed crystals of different morphologies resulting in significant variations of the related bipolar mobilities. As a key result, the charge carrier mobility of {proportional_to}1 cm{sup 2}/Vs at room temperature along the (111)-direction of Bridgman crystals exceeds that along the (001)-direction of VPT grown crystals by about one order of magnitude. The observed differences in the mobility data are discussed in the context of the ...

2010-07-01

79

cw operation of an AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

1982-09-01

80

Significance of microstructure for a MOCVD-grown YSZ thin film gas sensor

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

1984-09-15

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81

Room-temperature continuous-wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition

The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

1996-11-01

82

Relationships between Film Chemistry, Structure, and Mechanical Properties in Titanium Oxide

Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.

1987-04-20

83

Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE

Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural characteristics.

2001-01-01

84

Optoelectronic devices grown by metallo-organic chemical vapor deposition

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

1990-07-16

85

MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

86

High power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

1996-12-31

87

Growth and transpiration of maize and winter wheat in response to water deficits in pots and plots

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow rid structures were 300 A/cm{sup 2} and 330 A/cm{sup 2} for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87--89% and the internal losses of 7--10 cm{sup {minus}1} were obtained.

1996-03-01

88

British Library Electronic Table of Contents (United Kingdom)

Pots used for experiments conducted on plants grown in them create rooting environments that are affected by limited soil volume, which can affect various physiological processes, including transpiration, and plant growth. However, the applicability of results from pot experiments to the field has received limited attention. The objective of this study was to compare the growth and transpiration of maize (Zea mays L.) and winter wheat (Triticum aestivum L.) when grown in pots and field plots under various constant water deficits. The experiments were conducted under similar environmental conditions for both pots and plots. Transpirational responses at both transient (RTTr) and daily (RDTr) time scales to a decreasing fraction of available soil water (FASW) were analyzed. For a comparable F...

2011-01-01

89

Glutathione peroxidase activity in the selenium-treated alga Scenedesmus quadricauda

British Library Electronic Table of Contents (United Kingdom)

The function of selenium in an organism is mediated mostly by selenoproteins including glutathione peroxidase. Glutathione peroxidase is a potent anti-oxidative enzyme, scavenging a variety of peroxides. The green alga Scenedesmus quadricauda was used to investigate the relationship between the toxicity of selenium and the glutathione peroxidase activity. Selenium resistant strains SeIV and SeVI were synchronized and grown in high concentrations of Se (selenite or selenate). As a measure of selenium toxicity the EC50 values were determined. During growth of the untreated wild type, glutathione peroxidase activity increased slightly and then declined gradually until the end of the cell cycle. A similar pattern was observed in untreated resistant strains and when resistant strains were grown...

2011-01-01

90

Epitaxial bain path in transition metals

Effects of simulated acidic rain applied alone and in combination with ambient rain on growth and yield of field-grown snap bean

Epitaxial films grown pseudomorphically on substrates provide a way to stabilise non-equilibrium structures of materials. Obviously, there always is a certain lattice misfit between substrate and film material in its bulk equilibrium structure. In the pseudomorphic regime, this misfit can either lead to the growth of films in a strained bulk structure or even yield structures that are not stable in the bulk. Large misfits do not necessarily imply large lateral stress. Theory can help to predict e.g. geometry, stress and magnetic properties of pseusomorphically grown metal films. In this work, we considered the fcc-bcc epitaxial Bain path of 3d, 4d, and 5d transition metals, which provides a reasonable description of tetragonally distorted films on substrates. We carried out density functional calculations in the implementation of the full potential local orbital program package FPLO. Emphasis is put on similarities among the transition metals.

2010-07-01

91

Effects of acute and chronic gamma irradiation on the shoot apex and general morphology of Lupinus albus L

Field-grown snap bean plants were treated with simulated acidic rain applied either alone or in combination with ambient rain and the effects on growth and yield were determined. In plots where ambient rain was excluded, a retractable canopy was activated to shield the crop. Four levels of acidity at pH values of 5.0, 4.2, 3.4 and 2.6 were applied in four replicate treatments and the experiment was conducted in two successive years (1981 and 1982). In plots that received only simulated rain, yield was not adversely affected by acidic rain; in 1981, a positive linear relationship was present between acidity of simulated rain and yield, but in 1981, no effect was found. In contrast, in plots that received both simulated and ambient rain, a negative linear relationship between acidity in simulated rain and yield was observed in both years.

1984-01-01

92

Dielectric and thermal characteristics of gel grown single crystals of ytterbium tartrate trihydrate

Lupinus albus L. plants were grown from seeds and irradiated at various stages of development with acute or chronic gamma rays. All plants were greenhouse grown (pre- and post-irradiation) and allowed to proceed through their normal growth cycle. The purpose of these experiments was to establish a Plactochron Index for Lupinus albus L. and to determine the effects of acute and chronic irradiation on development at the macro and microscopic levels. A Plastochron Index was calculated and used as an indirect time scale to evaluate the effects of gamma rays from a common base line. Acute radiation treatment lasted for a period of a few days, whereas chronic treatment was initiated at the seedling stage and lasted for the entire growth season. Vegetative plants were used to study the effects of acute radiation exposure on apical meristem morphology, Plastochron Index, phyllatoxis and gross morphology.

1980-01-01

93

British Library Electronic Table of Contents (United Kingdom)

Dielectric and thermal characteristics of gel grown single crystals of ytterbium tartrate trihydrate have been carried out. The dielectric constant has been measured as a function of frequency in the range 2?kHz?1?MHz and temperature range 30?300??C. The dielectric constant increases with temperature, attains a peak near 215??C, and then decreases as the temperature exceeds 215??C. The dielectric anomaly at 215??C is suggested to be due to phase transition brought about in the material. The dielectric behaviour of the material is correlated with the results on thermal analysis. Thermogravimetric and differential thermal analysis have been used to study the thermal characteristics of the material. The experimental results show that the material is thermally stable up to 200??C. The decompos...

2007-01-01

94

Characterization of (In1−xAlx)2S3 thin films grown by co-evaporation

British Library Electronic Table of Contents (United Kingdom)

In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

2010-01-01

95

Antiferromagnetic ordering of defects in GaAs

1. 55 [mu]m buried ridge stripe laser diodes grown by gas source molecular beam epitaxy

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

1992-10-15

96

The Isolation and Partial Characterization of a Membrane Fraction Containing Phytochrome ¹²

Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 [mu]m. The stripe was defined by reactive ion etching. A threshold current of 22 mA was reproducibly obtained on a laser length of 500 [mu]m. A CW output power of 48 mW per facet was achieved. In addition, preliminary accelerated aging tests have shown the high reliability the structure. (orig.)

1993-02-01

97

Technetium transfer from soil to plants

If 4-day-old dark-grown zucchini squash seedlings (Cucurbita pepo L. cv. Black Beauty) are exposed briefly to red light, subsequent cell fractionation yields about 40% of the total...Full Text Available

1974-09-01

98

Sustainable pest control - comparing tritrophic interactions in organic and conventional production systems

Technetium transfer from soil to edible parts of various agricultural plants is studied with application of the "9"5"mTc radioactive tracer. The samples of agricultural plants were grown on andesol typical for Japan soil. The technetium transfer factor to edible parts of cultivated lettuce was higher as compared to non foliate cultures. Relative low transfer factor were observed for fruit and pod like plants. the transfer factors for root crops were of intermediate value

99

Structural and electrical characteristics of epitaxial CoSi{sub 2} grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

DescriptionThis cross-disciplinary project will combine chemical, ecological and modelling techniques to determine whether cabbages grown under an organic regime differ in terms of pest dynamics and plant chemistry. There is increasing pressure to de-intensify agricultural practice and organic approaches are becoming more popular and widely adopted. However, there are very few, if any, detailed scientific investigations into the claims made about improved pest control, reduced environmental impact and be [continued...

2009-01-31

100

Structural and electrical characteristics of epitaxial CoSi_2 grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 ...

2004-06-30

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101

Relationships of Quality Characteristics with Size Exclusion HPLC Chromatogram of Protein Extract in Soft-White Winter Wheats.

Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi_2 layers with the low sheet resistance value as low as congruent with 4.4 #OMEGA#/cm up to the annealing temperature as high as ...

2004-06-30

102

Research - Keyword Index

Wastenet

...understanding sweden publication publication market publications publications inco publications library public-private partnerships publishing publishing platform pufafeed puglia pulmonary diseases pulp puma pumped hydro storage pumped storage plants purity purpose purpose-grown energy crops purposes pv pv added value pv cells pv crystalline cells pv organic and polymer cells pv research pv ...

103

Regulation of K⁺ Influx in Barley 1

This study investigated relationships between molecular weight distributions of unreduced grain proteins and grain, flour, and end-use quality characteristics of soft white winter wheats grown in Oregon. Absorbance area and area % values of protein fractions separated by size exclusion HPLC (SE-HPL...

104

Plant biomass and stem juice of the C4 sugarcane at elevated growth CO2 and temperature

Influx and accumulation of K⁺ in barley (Hordeum vulgare L. cv Fergus) roots were measured at two temperatures (10°C and 20°C) in plants which had been grown...Full Text Available

1984-03-01

105

Photosynthesis and Growth of Water Hyacinth under CO₂ Enrichment ¹

Plant biomass, stem juice and stem sugar were determined for four sugarcane cultivars grown for three months at daytime [CO2] of 360 (ambient) and 720 (doubled) ppm and temperatures (T) of 1.5 (near-ambient) and 6.0C higher than outside ambient T. Leaf area and biomass, stem biomass, stem juice and ...

106

Morphology of electrodeposited Ni/Cu multilayer: Specular and diffuse neutron reflectometry study

Water hyacinth (Eichhornia crassipes [Mart.] Solms) plants were grown in environmental chambers at ambient and enriched CO₂ levels (330 and 600 microliters CO₂...Full Text Available

1986-10-01

107

Method of mitigating titanium impurities effects in p-type silicon material for solar cells

Structural studies of Ni/Cu multilayers grown by electro-deposition technique under different electro-chemical conditions have been carried out using specular and off-specular neutron reflectometry techniques at room temperature. The specular reflectivity measurements give values of layer thickness, density and interface roughness for these two films. The Off-specular reflectivity measurements indicate different interface morphology of the two films.

2006-11-15

108

Metabolism of 4-chloro-2-methylphenoxyacetate by a soil pseudomonad. Ring-fission, lactonizing and delactonizing enzymes

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

1980-05-01

109

In vitro activation of sigma-aminolevulinate dehydratase from far-red irradiated radish (Raphanus sativus L. ) seedlings by thioredoxin f

1. A cell-free system, prepared from Pseudomonas N.C.I.B. 9340 grown on 4-chloro-2-methylphenoxyacetate (MCPA) was shown to catalyse the reaction sequence: 5-chloro-3-methylcatechol...Full Text Available

1971-05-01

110

Growth Response of a Succulent Plant, Agave vilmoriniana, to Elevated CO₂¹

sigma-Aminolevulinate dehydratase has been found to be activated in vitro by dithiotreitol and factors isolated from radish cotyledons grown under continuous far-red light. Cross experiments, between fructose 1-6 bisphosphatase system, and sigma-aminolevulinate dehydratase, show that these factors are functionally identical to thioredoxin f.

1983-10-01

111

Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing

Large (about 200 grams dry weight) and small (about 5 grams dry weight) specimens of the leaf succulent Agave vilmoriniana Berger were grown outdoors at Phoenix, Arizona. Potted plants...Full Text Available

1986-03-01

112

Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils.

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

2006-05-15

113

Drying of medicinal plants with solar energy utilization

We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on platinized silicon and LaNiO{sub 3}-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of {approx}960 and dielectric loss of {approx}0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of {approx}820 and dielectric loss of {approx}0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 x 10{sup 6} V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of {approx}8.1 x 10{sup -9} A/cm{sup 2} and mean breakdown field strength of 1.7 x 10{sup 6} V/cm were measured at ...

2011-07-01

114

Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils.

In the paper, a potential of solar energy for drying of medicinal plants in Polish conditions is estimated and development of solar drying technologies is presented. The results of economic assessment of flat-plate solar collectors applied for drying of medicinal plants on a farm are promising. In some specific conditions, e.g. drying of wild grown medicinal plants in remote areas, even application of photovoltaic modules for driving of a fan of a solar dryer is a profitable option and enables easy control of the drying air temperature.

1997-10-01

115

Changes in Free and Conjugated Indole 3-Acetic Acid and Abscisic Acid in Young Cotton Fruits and Their Abscission Zones in Relation to Fruit Retention during and after Moisture Stress

Development of electronic devices with better performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method for embedding these components within a PWB. We have deposited high-permittivity ferroelectric lead lanthanum zirconate titanate (Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub x}, PLZT 8/52/48) films on base metal foils by chemical solution deposition. These prefabricated capacitor sheets can be embedded into PWBs for power electronic applications. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was applied by chemical solution deposition on nickel foil before the deposition of PLZT. With a {approx} 0.7-{micro}m-thick ferroelectric PLZT film grown on LNO-buffered nickel foil, we measured capacitance densities of 1.5 ...

2009-01-01

116

Action of Inhibitors of Ammonia Assimilation on Amino Acid Metabolism in Hordeum vulgare L. (cv Golden Promise) 1

Experiments were conducted with field-grown cotton (Gossypium hirsutum L.) in 1985 and 1986 to determine effects of water deficit on levels of conjugated indole 3-acetic...Full Text Available

1988-01-01

117

Up-regulation of sucrose metabolizing enzymes in Oncidium goldiana grown under elevated carbon dioxide

Barley (Hordeum vulgare L. cv Golden Promise) plants were grown in a continuous culture system in which the root and shoot ammonia and amino acid levels were constant over a 6-hour...Full Text Available

1983-03-01

118

Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

Experiments were conducted in controlled growth chambers to evaluate how increase in CO{sub 2} concentration affected sucrose metabolizing enzymes, especially sucrose phosphate synthase (SPS; EC 2.4.1.14) and sucrose synthase (SS; EC 2.4.1.13), as well as carbon metabolism and partitioning in a tropical epiphytic orchid species (Oncidium goldiana). Response of ribulose-1,5-bisphosphate carboxylase/oxygenase (Rubisco; EC 4.1.1.39) to elevated CO{sub 2} was determined along with dry mass production, photosynthesis rate, chlorophyll content, total nitrogen and total soluble protein content. After 60 days of growth, there was a 80% and 150% increase in dry mass production in plants grown at 750 and 1100 {mu} l{sup -}1 CO{sub 2}, respectively, compared with those grown at ambient CO{sub 2} (about 370 {mu} l{sup -}1). A similar increase in photosynthesis rate was detected throughout the growth period when measured under growth CO{sub 2} conditions. ...

2001-07-01

119

Trimodal island distribution of Ge nanodots on (001)Si

Yellow-emitting pulsed laser operation of an Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P/Al/sub 0.16/Ga/sub 0.36/In/sub 0.48/P/ Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm/sup 2/ for a diode with a Si/sub 3/N/sub 4/ insulated 8-..mu..m-wide and 250-..mu..m-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.

1984-11-01

120

Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy

Molecular beam epitaxy (MBE) grown Ge nanodots are found to come in a clear trimodal island distribution of huts, pyramids, and domes when grown on (001)Si at 550 deg. C. The island types appear in this order as Ge coverage increases and for a certain coverage all three types are found to coexist at this growth temperature. Previously Ge nanodots have mostly been divided into huts and domes at growth temperatures below 600 deg. C, or pyramids and domes above 600 deg. C. The (105) faceted pyramidal and elongated huts and the multifaceted domes are well known, but a distinction has not previously been seen between huts and a separate size distribution of similarly (105)-faceted pyramidal nanodots twice the size of huts, at temperatures below 600 deg. C. The 20-25 nm wide huts also appear to be the smallest obtainable self-assembled Ge dots on (001)Si, in accordance with predictions based on Si_1_-_xGe_x nanodots on (001)Si. They are about a ...

2006-09-15

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121

Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy

AlGaInP epitaxial layers grown at 690 {degree}C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {l brace}111{r brace} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, forms the columnar structure.

1990-04-09

122

Thin TiO2 grown by metal?organic chemical vapor deposition on (NH4)2S x -treated InP

AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, forms the columnar structure.

123

British Library Electronic Table of Contents (United Kingdom)

The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...

2011-01-01

124

Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates

Sucrose phosphate synthase activity in rice grown at elevated CO sub 2 and temperature

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe ...

125

Stoichiometry controlled conversion efficiency in nanostructured heterojunction solar cell of CdS/CuInSXSe2-X grown by chemical ion exchange method at room temperature

Rice (Oryza sativa L.) was grown at 330 and 660 {mu}L CO{sub 2} L{sup {minus}1} and at 40/33/37, 34/27/31, and 28/21/25{degree}C day/night/paddy water temperatures respectively. Sucrose phosphate synthase (SPS) activity was measured at saturating substrate concentrations at 59 days after planting. SPS activity increased 2 and 3 fold with increasing CO{sub 2} at 28 and 34{degree}C air temperatures respectively. At 40{degree}C SPS activity decreased by 37% at elevated CO{sub 2} and most plants failed to reach maturity. Similar responses were found in leaf samples taken in the dark. These results indicate that SPS, an enzyme involved in the regulation of C partitioning in leaves, increases in activity at elevated CO{sub 2}. This is in contrast to previous results with soybean. The changes in SPS activity will also be discussed in relation to leaf starch/sucrose ratios.

1990-05-01

126

British Library Electronic Table of Contents (United Kingdom)

Here in the present paper, we report on growth of stoichiometric and nonstoichiometric nanostructured heterojunction solar cell of CdS/CuInSXSe2-X varying X from 0 to 2 in the interval of 0.5 using cost effective, simple, chemical ion exchange method at room temperature on ITO glass substrate. The as-grown varying composition solar cells annealed at 200degreeC in air and characterized for structural, compositional, optical and illumination studies. The X-ray diffraction pattern obtained from CdS/CuInSXSe2-X solar cell confirms the formation of CuInSe2, CuInS0.5Se1.5, CuInS1Se1, CuInS1.5Se0.5 and CuInS2 phases having tetragonal structure with varying crystallite size from 19, 19.37, 28, 33 and 20nm respectively. The energy dispersive X-ray analysis (EDAX) confirms the expected elemental com...

2011-01-01

127

SnO{sub 2} thin films morphological and optical properties in terms of the Boubaker Polynomials Expansion Scheme BPES-related Opto-Thermal Expansivity {psi}{sub AB}

SnO2 thin films morphological and optical properties in terms of the Boubaker Polynomials Expansion Scheme BPES-related Opto-Thermal Expansivity ?AB

In this study, SnO{sub 2} thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (T{sub s} = 440 {sup o}C). The precursors were methanol CH{sub 4}O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity {psi}{sub AB}. The obtained value: {psi}{sub AB} {approx} 23.4 m{sup 3} s{sup -1} helped situating the performance of the as-grown SnO{sub 2} compound among most known PV-T oxides like ZnO and TiO{sub 2}.

2010-02-04

128

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.

2010-02-04

129

Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

1986-01-20

130

Remediation of contaminated agricultural soils near a former Pb/Zn smelter in Austria: Batch, pot and field experiments

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

1985-11-15

131

Radiation hardening revisited: role of intracascade clustering

Metal contaminated crops from contaminated soils are possible hazards for the food chain. The aim of this study was to find practical and cost-effective measures to reduce metal uptake in crops grown on metal contaminated soils near a former metal smelter in Austria. Metal-inefficient cultivars of crop plants commonly grown in the area were investigated in combination with in-situ soil amendments. A laboratory batch experiment using 15 potential amendments was used to select 5 amendments to treat contaminated soil in a pot study using two Barley (Hordeum vulgare L.) cultivars that differed in their ability to accumulate cadmium. Results from this experiment identified 3 of these amendments for use in a field trial. In the pot experiment a reduction in ammonium nitrate extractable Cd (<41%) and Pb (<49%) compared to the controls was measured, with a concurrent reduction of uptake into barley grain (Cd < 62%, Pb < 68%). In the field ...

2006-11-01

132

Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys

Experimental observations related to the initiation of plastic deformation in metals and alloys irradiated with fission neutrons have been analyzed. The experimental results, showing irradiation-induced increase in the upper yield stress followed by a yield drop and plastic instability, cannot be explained in terms of conventional dispersed-barrier hardening because (a) the grown-in dislocations are not free, and (b) irradiation-induced defect clusters are not rigid indestructible Orowan obstacles. A new model called 'cascade-induced source hardening' is presented where glissile loops produced directly in cascades are envisaged to decorate the grown-in dislocations so that they cannot act as dislocation sources. The upper yield stress is related to the breakaway stress which is necessary to pull the dislocation away from the clusters/loops decorating it. The magnitude of the breakaway stress has been estimated and is found to be in good ...

133

Organic against inorganic electrodes grown onto polymer substrates for flexible organic electronics applications

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the ...

134

Optical and electronic properties of Ag nanodots on Si(111)

One of the most challenging topics in the area of organic electronic devices is the growth of transparent electrodes onto flexible polymeric substrates that will be characterized by enhanced conductivity in combination with high optical transparency. An essential aspect for these materials is their synthesis and/or microstructure which define the transparency, the stability and the interfacial chemistry which in turn determine the performance and stability of the organic electronic devices, such as organic light emitting diodes, organic photovoltaics, etc. In this work, we will discuss the latest advances in the growth of organic (e.g. PEDOT:PSS) and inorganic (e.g. zinc oxide-ZnO, indium tin oxide-ITO) conductive materials and their deposition onto flexible polymeric substrates. We will compare the optical, structural, nano-mechanical and nano-topographical properties of the inorganic and organic materials and we investigate the effect of their structure on their properties and ...

2009-12-15

135

Nature of magnetic coupling between Mn ions in as-grown Ga1-xMnxAs studied by x-ray magnetic circular dichroism

Reflectance anisotropy spectroscopy (RAS) has been used, together with scanning tunnelling spectroscopy (STS), to investigate the optical and electronic properties of nanodots formed by depositing Ag on the Si(111)-3 x 1-Ag surface. One-dimensional (1D) arrays of nanodots were grown on a single-domain (3 x 1)-Ag surface and the anisotropic optical response in the 0.5-5 eV range measured by RAS. Aligned, elongated Ag islands were also grown on this surface to compare their properties with those of the nanodots. STS of the Ag islands showed distinct metallic behaviour, whereas the nanodots revealed a bandgap of #approx#0.6 eV, indicating that the surface of the dots has a non-metallic character, similar to that of the Si(111)-3 x 1-Ag surface. RAS also showed substantial differences between the structures, with a large infrared anisotropy for the metallic Ag islands consistent with anisotropic Drude-like intraband transitions, whereas the ...

2006-08-02

136

Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds.

The magnetic properties of as-grown Ga1-xMnxAs have been investigated by the systematic temperature and magnetic field dependent soft x-ray magnetic circular dichroism (XMCD) measurements in the Mn L2,3 absorption edge region. The XMCD intensity at high temperatures obeys the Curie-Weiss law, but residual spin magnetic moment appears already around 100 K, significantly above Curie temperature (Tc), suggesting that short-range ferromagnetic correlations are developed significantly above Tc. The high-field magnetic susceptibility becomes T-independent below TC, indicating that the AF interaction between the substitutional Mn (Mnsub and interstitial Mn (Mnint) ions, which becomes strong as the Mn concentration x increases, exists and that the amount of the Mnint affects Tc. The present experimental findings should give valuable insight into the inhomogeneous magnetic properties of many DMS's. (author)

2009-07-01

137

Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method ...

2011-05-17

138

Integrated plasma synthesis of efficient catalytic nanostructures for fuel cell electrodes

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in order to ensure that ...

1992-08-28

139

InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers

A single plasma process involving three consecutive steps has been developed for producing high gas flow catalytic nanostructures on the electrodes of proton exchange membrane (PEM) fuel cells (FC). Using a high density helicon radio frequency (13.56 MHz) plasma, nickel is sputtered onto a porous carbon support. Changing the background gas from argon to methane/hydrogen allowed 2 ?m long, 37 nm diameter carbon nanofibres (CNFs) to be grown by diffusion through the nickel clusters in a 'tip growth' mechanism at the relatively low temperature of 400 deg. C. The third step involves plasma sputtering of platinum onto the CNFs, resulting in nanoclusters (3-8 nm) being formed on the periphery of the CNFs. Four FC cathodes were synthesized on carbon paper and PTFE/carbon loaded cloth (known as gas diffusion layer, GDL), both with and without CNFs, with the Pt/CNFs nanostructures grown on PTFE/carbon loaded cloth having the best FC performances. ...

2007-08-01

140

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate

Distributed Bragg reflectors (DBRs) composed of In_0_._5Al_0_._5P/In_0_._5(Al_yGa_1_-_y)_0_._5P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0#<=#y#<=#0.6) and peak reflectivity wavelength (720 nm#<=##lambda##<=#565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of #lambda##approx#670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

141

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

2004-06-30

142

High tunability of pulsed laser deposited Ba0.7Sr0.3TiO3 thin films on perovskite oxide electrode

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

2004-06-30

143

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...

2011-01-01

144

Heteroepitaxial growth of cubic boron nitride single crystal on diamond seed under high pressure

Grow your own - health risks and benefits of producing and consuming your own food in urban areas

Single crystal cubic boron nitride (cBN) was heteroepitaxially grown on a seed crystal of diamond under static high pressure and high temperature at 5.5GPa and 1,600--1,700 C, respectively, for 10--100 hour. A temperature gradient method was employed for the crystal growth by using lithium boron nitride as a solvent. Initial growth feature of cBN crystal was found on the diamond seed surface after the growing time of 10 minutes. The nucleation sites of the crystals seem to be near the etch pits on the diamond surface which were introduced by the surface dissolution by the solvent for cBN growth. Two types of growth features, island and step growth were typically shown on the surface. It can be seen that grown crystal appearing as a (111) nitrogen face was exhibited with the step growth feature, while the (11n) face exhibited the island growth feature. Considering the growth process under constant P-T growing condition, growth rate of cBN ...

1997-04-04

145

Grain boundary transport in x-ray irradiated polycrystalline diamond

ObjectivesThis working group aims to conduct an in-depth analysis and synthesis of the health risks and benefits of producing and consuming your own food in urban areas. It will have a particular focus on urban soil pollutants - including both toxic elements and persistent organic pollutants that can pass up through the food chain or be ingested in soil. It will consider pathways of pollutant transport and deposition and human uptake from urban cultivation. Against the health risks associated with expos [continued...]DescriptionIn the UK there are over 250,000 allotment holders, many in urban areas, and in many city gardens fruit and vegetables are grown, often in regions known to have a legacy of environmental pollution. The activities of cultivating and eating 'home grown' foods holds both risks and benefits, yet the balance of risk and benefits and the resulting net implications for human health have not been clearly established. This has ...

2008-01-07

146

Determination of principal and impurity components in monocrystals of erbium and yttrium formates grown on the basis of high-pure substances

The transport properties of a 'thin' polycrystalline diamond film are analyzed after the sample exposure to 8.06-keV x-ray radiation. Structure and morphology of the as-grown film have been evaluated by Raman, x-ray diffraction, and scanning electron microscopy techniques. The transport properties have been investigated by measuring dark current-voltage characteristics in the temperature range of 60 to 360 K. Ohmic transport has been evidenced on the as-grown film up to 1.16x10"5 V/cm. After irradiation, nonlinear contributions to the dark current have been evidenced and related to field-assisted thermal ionization of traps. Below 200 K, hopping mechanisms have been observed. Correlations have been found among x-ray irradiation, density of traps involved in the transport processes, and the nonhomogeneous nature of the sample. A simple model of the grain boundary structure is proposed to explain the observations.

2003-05-15

147

DEFECT SELECTIVE ETCHING OF THICK ALN LAYERS GROWN ON 6H-SIC SEEDS - A TRANSMISSION ELECTRON MICROSCOPY STUDY

Determination of principal and impurity components in monocrystals of erbium and yttrium formates grown on the basis of high-pure formates from oriental primers, using the method of isothermal evaporation of the salt aqueous solutions with pH 4.4 - 4.5, is described. Er and Y were determined complexonometrically by the titration of the complex with arsenazo 1 by EDTA solution, and formate-ion was determined iodometrically. Impurities were analyzed by atomic-absorption and titrimetric methods. The atomic-absorption method permits to determine in the monocrystal from 1 x 10"-"4 to 5 x 10"-"3 % Mg at relative standard deviation S_r = 0.05; from 1 x 10"-"3 to 2.5 x 10"-"2 % Ca at S_r = 0.07 and from 2 x 0"-"4 to 5 x 10"-"3 % Pb ar S_r = 0.08.

148

Correlation between ion beam parameters and physical characteristics of nanostructures fabricated by focused ion beam

In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is associated with the smallest etch pit size.

2008-03-01

149

Copper and brass aged at open circuit potential in slightly alkaline solutions

We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the different processes involved which lead to the FIB induced deposition.

2008-04-01

150

Characterization and gas-sensing behavior of an iron oxide thin film prepared by atomic layer deposition

Surface oxide films were grown on 99.99% copper and brass (copper-zinc alloy, Cu77Zn21Al2) in 0.1 mol L{sup -1} borax solution at open circuit potential and were characterized using various experimental techniques. The composition of the passive films formed in situ on the different materials was studied using differential reflectance spectroscopy. The thickness of the oxide layers on copper and brass was compared by chronopotentiometric curves and potentiodynamic reductions. The electrical properties of each oxide were analyzed by means of electrochemical impedance spectroscopy. Their influence on the oxygen reduction reaction was also investigated using voltammetry hydrodynamic tools such as the rotating disk electrode. The results show that the incorporation of Zn to Cu in brass changes the composition and the thickness of the surface film. The films grown on brass tend to be thicker but less resistive and Zn compounds incorporate to the ...

2009-12-01

151

626. 2-nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition

In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. When exposed to O_2 and CO, a typical ...

2008-07-31

152

Yttrium Calcium Oxyborate for high average power frequency doubling and OPCPA

Room-temperature pulsed laser operation of (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P /(Al/sub 0.17/Ga/sub 0.83/)/sub 0.5/In/sub 0.5/P / (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm/sup 2/ for a diode with a 20-..mu..m-wide and 200-..mu..m-long stripe.

1985-01-01

153

Synthesis and scintillation properties of GdCl_3:Ce"3"+ (Gd_1_-_xCe_xCl_3_,x = 0.005-0.08)

Significant progress has been achieved recently in the growth of Yttrium Calcium Oxyborate (YCOB) crystals. Boules have been grown capable of producing large aperture nonlinear crystal plates suitable for high average power frequency conversion or optical parametric chirped pulse amplification (OPCPA). With a large aperture (5.5 cm x 8.5 cm) YCOB crystal we have demonstrated a record 227 W of 523.5nm light (22.7 J/pulse, 10 Hz, 14 ns). We have also demonstrated the applicability of YCOB for 1053 nm OPCPA.

2006-06-20

154

Studies of the correlated electron system SmB_6

Single crystals of GdCl_3 doped with different concentrations of Ce"3"+ have been grown using the Bridgman-Stockbarger technique and their luminescence and scintillation properties were investigated. The luminescence spectrum of GdCl_3:Ce"3"+ is complex and consists of two bands with maxima at 350 nm and 370 nm. The maximal light yield in GdCl_3:Ce"3"+ was observed at #approx#1 mol% of Ce"3"+ (more than 38 000 ph/MeV).

2009-07-08

155

Review of ion accelerators

We have prepared high-quality, single crystals of SmB_6 under various conditions to improve sample quality. We have measured the resistivity and magnetic susceptibility from room to liquid-helium temperatures to sort samples. We have applied pulsed magnetic fields as high as 50 T at temperatures as low as 40 mK while measuring resistivity. Our samples are of higher quality than previously known. All solvent-grown, single-crystal samples should be etched to remove a surface conductivity. (orig.).

156

Pumped storage plants in a new framework - challenges and consequences

The field of ion acceleration to higher energies has grown rapidly in the last years. Many new facilities as well as substantial upgrades of existing facilities have extended the mass and energy range of available beams. Perhaps more significant for the long-term development of the field has been the expansion in the applications of these beams, and the building of facilities dedicated to areas outside of nuclear physics. This review will cover many of these new developments. Emphasis will be placed on accelerators with final energies above 50 MeV/amu. Facilities such as superconducting cyclotrons and storage rings are adequately covered in other review papers, and so will not be covered here.

1990-06-01

157

Photoluminescence of manganese- and copper-doped CdS nanowires

Originally designed exclusively for peak load covering, pumped storage plants are now faced with new challenges brought about by the deregulation of the electricity market and the substantial growth of wind power capacity. Today's pumped storage plants are started more frequently and often for shorter periods of time. The grid controlling tasks have increased the importance of the role played by this type of power plant and improved sales considerably. But the operational demands have grown substantially as well. This paper discusses the ensuing adaptation of power plant operation as well as options available to power plant operators. (orig.)

2006-07-01

158

Photoluminescence of manganese- and copper-doped CdS nanowires

Arrays of CdS:Mn{sup 2+}:Cu{sup +} micro- and nanowires grown in polycarbonate ion-track templates exhibit photoluminescence in the spectral domain ranging from 500 to 800 nm at room temperature. A comparison with similar CdS and CdS:Mn{sup 2+} wire arrays is presented. The individual contributions to the emission spectra of Cu{sup +} and Mn{sup 2+} ions in the CdS matrix are explained using their energy level schemes. Also SEM, EDX and EPR data are given for these wires. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2005-02-01

159

Nutrient regulation of the saprotroph to parasite transition in Pochonia chlamydosporia, a soil microbial inoculant for nematode control

Arrays of CdS:Mn"2"+:Cu"+ micro- and nanowires grown in polycarbonate ion-track templates exhibit photoluminescence in the spectral domain ranging from 500 to 800 nm at room temperature. A comparison with similar CdS and CdS:Mn"2"+ wire arrays is presented. The individual contributions to the emission spectra of Cu"+ and Mn"2"+ ions in the CdS matrix are explained using their energy level schemes. Also SEM, EDX and EPR data are given for these wires. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2005-02-01

160

Magnetic properties of CeRh_2Si_2 and CePd_2Si_2 single crystals

DescriptionRoot-knot nematodes (Meloidogyne spp.) are major nematode pests of most tropical crops, making roots less efficient at withdrawing nutrients and water from soil, sometimes causing the total failure of crops grown by resource-poor farmers in Africa. Nematicides are some of the most toxic products used in crop protection, and are inappropriate or too expensive for use on most crops in Africa and there is an urgent need for new methods of nematode management. The fungus Pochonia chlamydosporia is [continued...

2011-01-31

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

161

Magnetic and electrical properties of single crystalline Formula Not Shown

Single-crystalline CeRh_2Si_2 and CePd_2Si_2 were grown by the Czochralsky pulling method and the temperature dependence of magnetic susceptibility was investigated. The crystalline electric field (CEF) states in each compound were determined by considering the tetragonal CEF Hamiltonian with mean-field approximation. Interactions between Ce"3"+ ion and the surrounding ligands in CeRh_2Si_2 turned out to be strong and highly anisotropic in comparison to CePd_2Si_2. (orig.)

1998-01-01

162

British Library Electronic Table of Contents (United Kingdom)

We have successfully grown single crystalline Formula Not Shown with the range of Formula Not Shown using the floating-zone method. All compounds show orthorhombic symmetry in this substitution range, but the difference between lattice constants a and b decreases with increasing Sr concentration and becomes almost zero at Formula Not Shown . Characteristic temperatures, which correspond to antiferromagnetic ordering and structural transition, decrease with increasing Sr concentration. The value of the magnetic susceptibility below 30K increases with increasing Sr concentration. The temperature dependence of the electrical resistivity revealed that Sr substitution significantly suppresses the highly anisotropic electric structure of Formula Not Shown .

2008-01-01

163

LUCIFER, a potentially background-free approach to the search for neutrinoless double beta decay

British Library Electronic Table of Contents (United Kingdom)

LUCIFER (Low-background Underground Cryogenic Installation For Elusive Rates) is a new project for the study of neutrinoless Double Beta Decay, based on the technology of scintillating bolometers. These devices promise a very efficient rejection of the alpha background, opening the way to a virtual background-free experiment if candidates with a transition energy higher than 2615 keV are investigated. The baseline candidate for LUCIFER is 82Se. This isotope will be embedded in ZnSe crystals grown with enriched selenium and operated as scintillating bolometers in a low-radioactivity underground dilution refrigerator. In this paper, the LUCIFER concept will be introduced. The sensitivity and the very promising prospects related to this project will be discussed.

2011-01-01

164

Ion beam crystallography of metal-silicon interfaces: Pd-Si(111)

Ion beam crystallography of metal-silicon interfaces: Pd-Si(111)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.

1982-07-09

165

Hall mobility minimum of temperature dependence in polycrystalline silicon

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).

166

Growth of epitaxial LaAlO{sub 3} and CeO{sub 2} films using sol-gel precursors

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

1998-01-01

167

Energy production on farms. Sustainability of energy crops

LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.

1996-04-01

168

Derivatives and their use in acquisition financing

In this article the results of a study on sustainability of energy crops are discussed. Contribution to the reduction of the greenhouse effect and other environmental effects were investigated for the Netherlands. The study assumed that energy crops are grown on set-aside land or grain land. Generating electricity and/or heat from hemp, reed, miscanthus, poplar and willow show the best prospects. These crops are sustainable and may in the future be economically feasible. Ethanol from winter wheat shows the most favourable environmental effects, but is not economically efficient. Liquid fuels from oil seed rape and sugar beet are not very sustainable. 2 tabs., 4 refs.

1994-12-06

169

Creation of a Cellooligosaccharide-Assimilating Escherichia coli Strain by Displaying Active Beta-Glucosidase on the Cell Surface via a Novel Anchor Protein.

Over the past decade, the energy {open_quotes}paper{close_quotes} market has grown into one of the largest traded markets in the world providing hedging instruments for the producer as well as the enduser of energy products. Because banks, stockholders, and other financial providers rely on a borrower`s ability to generate cash flow to repay their investment, borrowers are increasingly turning to the derivatives markets to provide security against one of the most volatile markets in he world. The existence of this market has enhanced the ability of financial institutions to lend with confidence and appropriate aggressiveness to the oil and gas industry.

1995-12-31

170

Controllable growth and magnetic properties of nickel nanoclusters electrodeposited on the ZnO nanorod template

We demonstrated direct assimilation of cellooligosaccharide using Escherichia coli displaying beta-glucosidase (BGL). BGL from Thermobifida fusca YX (Tfu0937) was displayed on the E. coli cell surface using a novel anchor protein named Blc. This strain was grown successfully on 0.2% cellobiose, and the optical density at 600 nm (OD(600)) was 1.05 after 20 h. PMID:21742905

2011-07-01

171

Continuous wave operation (77 K) of yellow (583. 6 nm) emitting AlGaInP double heterostructure laser diodes

The ZnO nanorods were used as a template to fabricate nickel nanoclusters by electrodeposition. The ZnO nanorod arrays act as a nano-semiconductor electrode for depositing metallic and magnetic nickel nanoclusters. The growth sites of Ni nanoclusters could be controlled by adjusting the applied potential. Under -1.15 V the Ni nanoclusters could be grown on the tips of ZnO nanorods. On increasing the potential to be more negative the ZnO nanorods were covered by Ni nanoclusters. The magnetic properties of the electrodeposited Ni nanoclusters also evolved with the applied potentials.

2009-12-09

172

Clones to replace forest seedlings

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

1986-03-03

173

A considerable time can elapse between initial selection of candidate plus trees and harvest of improved seed. The technique showing the greatest promise of shortening this interval is vegetative propagation. Stock plants are grown for two years from seed before the first propagation cycle begins and each plant can be bulked-up 300-500 times over two cycles. An initial stock of 2500 superior Sitka Spruce plants can be multiplied to yield between 300,000 and 750,000 rooted cuttings for forest use within four years from the start of propagation.

1985-01-01

174

Alternative Loop Rings

Wool-waste as organic nutrient source for container-grown plants

For the past ten years, alternative loop rings have intrigued mathematicians from a wide cross-section of modern algebra. As a consequence, the theory of alternative loop rings has grown tremendously. One of the main developments is the complete characterization of loops which have an alternative but not associative, loop ring. Furthermore, there is a very close relationship between the algebraic structures of loop rings and of group rings over 2-groups. Another major topic of research is the study of the unit loop of the integral loop ring. Here the interaction between loop rings and group ri

1996-01-01

175

N"v"a"r"-"e"p"s"i"l"o"n-acetyl-#beta#-lysine: An osmolyte synthesized by mothanogenic archaebacteria

A container experiment was conducted to test the hypothesis that uncomposted wool wastes could be used as nutrient source and growth medium constituent for container-grown plants. The treatments were: (1) rate of wool-waste application (0 or unamended control, 20, 40, 80, and 120 g of wool per 8-in. pot), (2) growth medium constituents [(2.1) wool plus perlite, (2.2) wool plus peat, and (2.3) wool plus peat plus perlite], and (3) plant species (basil and Swiss chard). A single addition of 20, 40, 80, or 120 g of wool-waste to Swiss chard (Beta vulgaris L.) and basil (Ocimum basilicum L.) in pots with growth medium provided four harvests of Swiss chard and five harvests of basil. Total basil yield from the five harvests was 1.6-5 times greater than the total yield from the unamended control, while total Swiss chard yield from the four harvests was 2-5 times greater relative to the respective unamended control. The addition of wool-waste to the growth medium ...

2009-07-01

176

Large-scale production of single-walled carbon nanotubes by induction thermal plasma

Methanosarcina thermophila, a nonmarine methanogenic archaebacterium, can grow in a range of saline concentrations. At less than 0.4 M NaCl, Ms. thermophila accumulated glutamate in response to increasing osmotic stress. At greater than 0.4 M NaCl, this organism synthesized a modified #beta#-amino acid that was identified as N"v"a"r"-"e"p"s"i"l"o"n-acetyl-#beta#-lysine by NMR spectroscopy and ion-exchange HPLC. This #beta#-amino acid derivative accumulated to high intracellular concentrations (up to 0.6 M) in Ms. thermophila and in another methanogen examined - Methanogenium cariaci, a marine species. The compound has features that are characteristic of a compatible solute: it is neutrally charged at physiological pH and it is highly soluble. When the cells were grown in the presence of exogenous glycine betaine, a physiological pH and it is highly soluble. When the cells were grown in the presence of exogenous glycine betaine, a physiological ...

177

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

High quality single-walled carbon nanotubes (SWNT) have been synthesized at large scales by the method of direct evaporation of carbon black and metallic catalyst mixtures, using induction thermal plasma technology. The processing system consists mainly of an RF plasma torch, which generates a plasma jet of extremely high temperature (?15 000 K), with a high energy density and abundance of reactive species (ions and neutrals). With the present reactor system, it has been demonstrated that carbon soot product which contains approximately 40 wt% of SWNT can be continuously synthesized at the high production rate of ?100 g h-1. The processing parameters involved have been examined closely in order to evaluate their individual influences on SWNT synthesis. The results have shown that the quality and purity of the SWNT produced are critically affected by the grade of carbon black, the plasma gas composition and the metallic catalyst employed. Theoretical calculations, including ...

2007-04-21

178

Superconducting Properties of Epitaxial Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA) Thin Films and Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA)/PRASEODYMIUM BARIUM(2) COPPER(3) OXYGEN(7-Z)/YTTRIUM BARIUM(2) COPPER(3) OXYGEN(7 - Heterostructures Grown by Pulsed Laser Deposition

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is ...

1987-03-01

179

Study of the inorganic constituents in different species of Casearia medicinal plant collected in distinct regions of the Atlantic Forest, SP State, Brazil; Estudo sobre os constituintes inorganicos presentes em diferentes especies da planta medicinal do genero Casearia coletadas em regioes distintas da Mata Atlantica, SP

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed laser deposition, and ...

1992-01-01

180

Responses of hybrid poplar clones and red maple seedlings to ambient O_3 under differing light within a mixed hardwood forest

The use of medicinal plants in the treatment of diseases has increased significantly in the last years, as has research concerning chemical characterization of these plants. In this study, inorganic constituents were determined in leaves and in extracts from three medicinal plant species of the Casearia genus (C. sylvestris, C. decandra and C. obliqua) collected in distinct regions of the Atlantic Forest, SP. The elemental compositions of the soils in which these plants were grown were also determined. Traditionally, these plants are used due to their antiinflammatory, antiacid, antiseptic and cicatrizing properties. The antiulcer and the antitumor activities of the Casearia genus and its capacity to neutralize snake and bee venoms, have also been scientifically confirmed. The analytical methodology used was neutron activation analysis. Long and short irradiation periods of the samples and the standards were carried out at IPEN's IEA-R1 nuclear research ...

2006-07-01

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181

Leakage currrent characteristics and dielectric breakdown of antiferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} film capacitors grown on metal foils.

The responses of ramets of hybrid poplar (Populus spp.) (HP) clones NE388 and NE359, and seedlings of red maple (Acer rubrum, L.) to ambient ozone (O_3) were studied during May-September of 2000 and 2001 under natural forest conditions and differing natural sunlight exposures (sun, partial shade and full shade). Ambient O_3 concentrations at the study site reached hourly peaks of 109 and 98 ppb in 2000 and 2001, respectively. Monthly 12-h average O_3 concentrations ranged from 32.3 to 52.9 ppb. Weekly 12-h average photosynthetically active radiation (PAR) within the sun, partial shade and full shade plots ranged from 200 to 750, 50 to 180, and 25 to 75 #mu#mol m"-"2 s"-"1, respectively. Ambient O_3 exposure induced visible foliar symptoms on HP NE388 and NE359 in both growing seasons, with more severe injury observed on NE388 than on NE359. Slight foliar symptoms were observed on red maple seedlings during the 2001growing season. Percentage of total leaf area affected (%LAA) was ...

2004-07-01

182

Using "EC-Assess" to Assess a Small Biofuels Project in Honduras

We have grown crack-free antiferroelectric (AFE) Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, E{sub AF} = 260 kV cm{sup -1}, and the reverse phase transition field, E{sub FA} = 220 kV cm{sup -1}, were measured at room temperature on a {approx}1.15 {micro}m thick PLZT film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE ...

2008-01-01

183

Unidirectional growth, linear and nonlinear optical, dielectric and mechanical properties of organic adduct of L-tartaric acid nicotinamide

Biofuels may contribute to both rural economic development and climate change mitigation and adaptation. The Gota Verde Project in Yoro, Honduras, attempts to demonstrate the technical and economic feasibility of small-scale biofuel production for local use by implementing a distinctive approach to feedstock production that encourages small farm sizes, mixed cropping of biofuel feedstock from Jatropha and food crops, particularly corn and beans, grown side by side on the same farmland and the total involvement of small rural farmers. But is the project sustainable? Using EC-Assess, the Earth Charter ethics-based assessment tool, to assess the sustainability of this project, the author found that in some assessment categories the actions surpassed the intended objectives, showing that the project was achieving certain Earth Charter goals without specifically stating its intention to address them. (Contains 3 images, 3 figures and 2 notes.)

2010-09-01

184

Transport properties of single-crystalline n-type semiconducting PbTe nanowires

An attempt has been made to grow L-tartaric acid nicotinamide (LTN); a complex of tartaric acid, by employing a modified unidirectional method. The crystalline structure and quality are investigated by single crystal XRD and rocking curve studies. The linear and nonlinear optical properties are studied by UV-vis-NIR spectral analysis, SHG test, phase matching and laser induced damage threshold measurement. For comparison, parallel growth of the crystal was carried out by conventional method and the properties of the LTN samples grown by the conventional and unidirectional methods are investigated. The mechanical, photoconductivity and dielectric behavior of LTN crystals are also investigated.

2011-03-15

185

Transient enhanced diffusion in B/sup +/ and P/sup +/ implanted silicon

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm"2 V"-"1 s"-"1 and 8.8 x 10"1"7 cm"-"3, respectively. The Seebeck coefficients (-72 ?V K"-"1) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.

2009-10-14

186

Thermal and Mechanical Characterizations of Nanomaterial-Modified Adhesive Used in Bonding CFRP to Concrete

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

187

British Library Electronic Table of Contents (United Kingdom)

Nanomaterials are increasingly being used to modify adhesives used in aerospace and materials applications. Improvements in thermal and mechanical properties have been found by incorporation of small amounts of nanosize materials in to such adhesives. However, the introduction of nanomaterials to adhesives used in civil engineering applications is still a new approach which needs to be explored, especially in retrofitting of structures. This paper presents part of an ongoing research to address the effect of adding nanomaterials to modify a thermosetting adhesive used for bonding carbon fibre reinforced polymer (CFRP) composites to concrete members. Vapour grown carbon fiber (VGCF) was chosen to modify the adhesive. Different concentrations of carbon nanofibres PR-24 XT-LHT were adopted fo...

2011-01-01

188

The role of MRI in the diagnosis of recurrent/persistent carpal tunnel syndrome: A radiological and intra-operative correlation

British Library Electronic Table of Contents (United Kingdom)

MRI (Magnetic resonance imaging) has been widely used in the diagnosis of primary carpal tunnel syndrome (CTS). However, it has had limited clinical application in diagnosing persistent or recurrent CTS. We aimed to investigate the efficacy of this imaging modality in patients who had previously undergone open carpal tunnel release without relief of symptoms, and assess the correlation of MRI with intra-operative findings upon re-exploration. MRI studies were performed on 17 wrists (16 patients) presenting with recurrent/persistent symptoms and signs of CTS in whom repeat nerve conduction studies were also performed. Surgical re-exploration was undertaken on 16 wrists in which a 100% correlation was noted between MRI and intra-operative findings of an incompletely released or re-grown tran...

2011-01-01

189

The effects of soil type and chemical treatment on nickel speciation in refinery enriched soils: A multi-technique investigation

British Library Electronic Table of Contents (United Kingdom)

Aerial deposition of Ni from a refinery in Port Colborne, Ontario, Canada has resulted in the enrichment of 29km2 of land with Ni concentrations exceeding the Canadian Ministry of the Environment's remedial action level of 200mgkg-1. Several studies on these soils have shown that making the soils calcareous was effective at reducing chemically extractable Ni, as well as alleviating Ni phytotoxicity symptoms in vegetable crops grown in the vicinity of the refinery. Conversely, dolomitic limestone additions resulted in increased uptake of Ni in the Ni hyperaccumulator Alyssum murale `Kotodesh', a plant whose use was proposed as a remediation strategy for this area. In this paper we use multiple techniques to directly assess the role soil type and lime treatments play in altering the speciati...

2007-01-01

190

The effects of chemicals in the presence of cellophane on X-ray-induced point mutation and gene conversion in Aspergillus midulans

The Effect of Contacts on the Counting Characteristics of Heavily Doped Normal-Type Cadmium-Telluride

The presence of washed or unwashed cellophane alone or together with a bleomycin, mitomycin C or hydrochlorothiazide, ('Esidrex') showed no appreciable effect on survival of either unirradiated or irradiated conidia. Irradiation for a period of 20min reduced the survival of conidia to 20%. The growth of irradiated conidia in the presence of bleomycin, mitomycin C or Esidrex is associated with a 2- to 3-fold increase in the frequency of gene convertants, but was not accompanied by an increase in point mutants. When conidia were grown on cellophane but otherwise treated as before the frequency of gene convertants was increased 8-fold, but induction of point mutants was negligible. This effect was the same for irradiated and unirradiated conidia. The environment created by the cellophane in contract with the medium appears to affect the action of each of the three compounds synergistically. (author).

191

Structure and properties of Li2Zn2(MoO4)3 crystals activated with copper and chromium ions

Cadmium telluride single crystals were grown heavily doped with chloride by the THM method. The resulting crystals were n-type with free carrier concentrations of the order of 10('12)/cm at room temperature. Hall effect studies revealed room temperature mobilities between 30 and 350 cm('2)/v-sec and resistivites between 2 x 10('3) and 10('4) ohm-cm. Studies were made of the gamma and alpha counting characteristics of these crystals with metal, metal-semiconductor, and metal-insulator electrodes. It was found that the MIS and MSS structures resulted in significant improvement over the MS structures in counting, signal-to-noise and energy resolution.

1985-01-01

192

British Library Electronic Table of Contents (United Kingdom)

Based on the corrected phase diagrams proper growth conditions for Li2Zn2(MoO4)3 crystals are selected. Large crystals (up to 100 mm), both impurity-free and activated by transition metal ions (Cu, Cr), are grown by the low-gradient Czochralski method. By the EPR method the charge state and structural position of copper and chromium ions are determined. The performed studies of luminescent properties show that for impurity-free crystals luminescence with ? = 388 nm with a two-exponential luminescence decay with ?1 = 2 ns and ?2 = 6 ns is observed at room temperature. At 77 K for both impurity-free crystals and those activated with transition metal ions luminescence with ? = 560 nm and the luminescence lifetime ? = 100 ns is observed, the intensity of luminescence with ? = 560 nm depending ...

2011-01-01

193

Strategies to Promote High School Students’ Healthful Food Choices

British Library Electronic Table of Contents (United Kingdom)

Studies have suggested that skill-building through hands-on cooking as a nutrition education strategy, is effective to improve overall dietary quality among participants. FamilyCook Productions' ''Diet for a Healthy Planet with Teen Battle Chefs(TM)'' curriculum using this approach, was piloted in 2008 in a Brooklyn public high school resulting in a statistically significant improvements in dietary quality as well as attitudinal improvements and efforts by students to support changes in school food service. Program evaluation used the RE-AIM framework and employed both quantitative and qualitative strategies including pre and post program surveys, focus groups, and weekly electronic teacher feedback. The program has since grown to over 85 high schools in 16 states.

2011-01-01

194

Selective formation of ZnO nanodots on nanopatterned substrates by metalorganic chemical vapor deposition

Second generation antipsychotics (SGAs) for non-psychotic disorders in children and adolescents: A review of the randomized controlled studies

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

2003-10-27

195

British Library Electronic Table of Contents (United Kingdom)

In children and adolescents the Second Generation Antipsychotics (SGAs) represent the class of psychotropic drugs whose use has grown more significantly in recent years: they are primarily used for treatment of patients with disruptive behavior disorders, mood disorders and pervasive developmental disorders or mental retardation. In order to compare the efficacy and tolerability of antipsychotics against placebo or each other, a systematic Medline/PubMed search for randomized, double blind studies on SGA in patients younger than 18years of age at enrolment, was conducted. Papers on schizophrenia, discussed in another article of this specific issue, were excluded by the efficacy analysis. A set of standard efficacy and safety indices, such as treatment effect sizes (ES), the Numbers Needed ...

2011-01-01

196

Root exudation of sugars, amino acids, and organic acids by maize as affected by nitrogen, phosphorus, potassium, and iron deficiency

British Library Electronic Table of Contents (United Kingdom)

Abstract Root exudates play a major role in the mobilization of sparingly soluble nutrients in the rhizosphere. Since the amount and composition of major metabolites in root exudates from one plant species have not yet been systematically compared under different nutrient deficiencies, relations between exudation patterns and the type of nutrient being deficient remain poorly understood. Comparing root exudates from axenically grown maize plants exposed to N, K, P, or Fe deficiency showed a higher release of glutamate, glucose, ribitol, and citrate from Fe-deficient plants, while P deficiency stimulated the release of -aminobutyric acid and carbohydrates. Potassium-starved plants released less sugars, in particular glycerol, ribitol, fructose, and maltose, while under N deficiency lower am...

2011-01-01

197

Quantifying the thermal flowering rates of eighteen species of annual bedding plants

British Library Electronic Table of Contents (United Kingdom)

The effect of mean daily air temperature (MDT) on flowering rate (the reciprocal of days to flower) was quantified for 18 species of annual bedding plants. Plants were grown in environmental growth chambers at constant air temperature set points of 5, 7.5, 10, 15, 25, or 30^oC and under an irradiance of 160-180mmolm^-^2s^-^1, with a 16-h photoperiod. Nonlinear mathematical equations were developed to predict the effect of MDT on flowering rate and to estimate the base, optimum, and maximum temperatures (Tmin, Topt, and Tmax), which are the temperatures at which flowering rates are zero (low temperature), maximal, and zero once again (high temperature), respectively. The estimated Tmin varied among species and ranged from 1.1^oC in French marigold (Tagetes patula L.) to 9.9^oC in angelonia ...

2011-01-01

198

Printers: the neglected threat

British Library Electronic Table of Contents (United Kingdom)

One of the issues with printers - or the increasingly common multi-function devices (MFDs) - is that no one takes any notice of them. They just sit there, unacknowledged and ignored, in the corner of the office, printing, photocopying, faxing and even emailing away and no one gives them a second thought. Until something goes wrong. No-one gives printers - or multi-function devices (MFDs) - a second thought, as they have just been sitting there in offices doing their thing for years. But the problem is that they have now grown up to become fully-fledged computers and are starting to present an information security risk. These machines now have operating systems, hard drives and IP addresses, and have been exploited as storage devices by hackers. But most problems stem from poor internal pra...

2011-01-01

199

Point-contact Andreev spectroscopy on thin Ni_2MnIn Heusler films

Photoconductive ultraviolet detectors based on ZnO films

Heusler films with L2_1 and B2 structure are deposited simultaneously on amorphous carbon films, Si(100) surfaces, and in situ cleaved InAs(110) surfaces by coevaporation of Ni and the alloy MnIn. Morphology, structure, and stoichiometry are investigated with transmission-electron microscopy, electron diffraction, and X-ray spectroscopy. The almost perfect lattice match supports highly oriented growth of Ni_2MnIn on InAs, which is proven by electron diffraction under grazing incidence. The electrical resistivity of thin films on Si show metallic behavior. At temperatures of liquid helium point-contact Andreev reflection spectroscopy is performed on films grown on Si(100) and in situ cleaved InAs(110) surfaces yielding spin polarizations comparable to the ones of Fe, Ni, Co, and permalloy (Ni_8_0Fe_2_0).

2007-09-01

200

British Library Electronic Table of Contents (United Kingdom)

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8mA, and a slow photoresponse with a rise time of 5min and a decay time of 7min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the d...

2006-01-01

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201

Photobiology and photosynthesis

British Library Electronic Table of Contents (United Kingdom)

To test the hypothesis that leaf level photosynthetic related traits might confer late successionals a competitive advantage over early successionals in low light growth conditions, steady photosynthetic assimilation and dynamic photosynthetic induction related traits were examined in low light grown seedlings with contrasting successional status. Compared with the early successionals, late successionals as a group significantly exhibited lower leaf gas exchange rates. While late successionals required a longer time to respond to simulated sunflecks, they had lower rates of induction losses after sunflecks. Such photosynthetic induction traits allowed late successionals to more effectively utilize subsequent sunflecks. It was observed that plants with lower gas exchange rates responded mor...

2011-01-01

202

Peroxisomal hydroxypyruvate reductase is not essential for photorespiration in Arabidopsis but its absence causes an increase in the stoichiometry of photorespiratory CO2 release

British Library Electronic Table of Contents (United Kingdom)

Recycling of carbon by the photorespiratory pathway involves enzymatic steps in the chloroplast, mitochondria, and peroxisomes. Most of these reactions are essential for plants growing under ambient CO2 concentrations. However, some disruptions of photorespiratory metabolism cause subtle phenotypes in plants grown in air. For example, Arabidopsis thaliana lacking both of the peroxisomal malate dehydrogenase genes (pmdh1pmdh2) or hydroxypyruvate reductase (hpr1) are viable in air and have rates of photosynthesis only slightly lower than wild-type plants. To investigate how disruption of the peroxisomal reduction of hydroxypyruvate to glycerate influences photorespiratory carbon metabolism we analyzed leaf gas exchange in A. thaliana plants lacking peroxisomal HPR1 expression. In addition, b...

2011-01-01

203

Optical investigations of the mode spectra of InP-quantum dots embedded in (Al_xGa_1_-_x)InP micro pillars

Optical characterization of In2S3 solar cell buffer layers grown by chemical bath and physical vapor deposition

InP-quantum dots (QDs) are promising sources of single-photons and as active laser medium, emitting in the red part of the visible spectrum and thus in the range of the highest sensitivity of current silicon detectors. The self assembled QDs were grown by metal organic vapor phase epitaxy and are embedded in between distributed Bragg reflectors (DBRs), afterwards the sample was processed by a Focused Ion Beam to fabricate micro-pillars. The DBRs and the high refractive index step between pillar and air results in a three dimensional mode confinement and highly directed emission and thus higher intensity. We have investigated the mode spectra by micro-photoluminescence measurements for different pillar diameters and compared the spectra with a theoretical model showing up good consistency. Q-factors up to 3600 were achieved.

2009-03-22

204

British Library Electronic Table of Contents (United Kingdom)

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.

2008-01-01

205

One-step synthesis of Pt-supported carbon nanohorns for fuel cell electrode by arc plasma in liquid nitrogen

Observation of strain-enhanced electron-spin polarization in photoemission from InGaAs

One-step synthesis of Pt-loaded carbon nanoparticles including single-wall carbon nanohorns (SWNHs) by arc plasma in liquid nitrogen was demonstrated using Pt-contained graphite anode. The size distribution of Pt particles can be controlled by adjusting the concentration of Pt in the graphite anode. In the observation by transmission electron microscope, the diameter of less than 5 nm of Pt particles were observed as approximately 90% among the Pt particles when Pt was contained in the anode at 1.3 at.%. When Pt concentration in the anode was decreased to 0.4 at.%, the percentage of Pt particles whose diameter is less than 5 nm decreased to approximately 60%. It was verified that the as-grown Pt-loaded products produced by this method can be useful for the power generation by polymer electrolyte fuel cell.

2006-10-10

206

OMVPE growth of GaP and AlGaP using tertiarybutylphosphine as the phosphorus source

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

207

New highly active oxygen reduction electrode for PEM fuel cell and Zn/air battery applications (NORA). Final report

GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700deg C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2x10{sup 3}{mu}m/mol and that for AlGaP was 2.1x10{sup 3}{mu}m/mol.4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP. (orig.).

1991-03-01

208

New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991

This illustrated final report for the Swiss Federal Office of Energy (SFOE) presents the results of a project concerning a new, highly active oxygen reduction electrode for PEM fuel cell and zinc/air battery applications. The goal of this project was, according to the authors, to increase the efficiency of the oxygen reduction reaction by lowering the activation polarisation through the right choice of catalyst and by lowering the concentration polarisation. In this work, carbon nanotubes are used as support material. The use of these nanotubes grown on perovskites is discussed. Theoretical considerations regarding activation polarisation are discussed and alternatives to the use of platinum are examined. The results of experiments carried out are presented in graphical and tabular form. The paper is completed with a comprehensive list of references.

2008-04-15

209

New III-V cell design approaches for very high efficiency

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

1993-01-01

210

NEW COLLECTION RECORDS AND HOST RANGE OF THE COTTONWOOD LEAFCURL MITE, TETRA LOBUUFERA (K!IFER) (ACARI: ERIOPHYIDAE), IN THE USA.

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

1993-01-01

211

Mechanisms of Reproductive Thermotolerance in Gossypium hirsutum: The Effect of Genotype and Exogenous Calcium Application

Coyle, D.R., and J.W. Amrine, Jr. 2004. New collection records and host range of the cottonwood leafcurl mite, Tetra lobulifera (Keifer) (Acari: Eriophyidae), in the USA. Internat. J. Acarol. 30(1):3-8. The cottonwood leafcurl mite, Aculops lobuliferus Keifer, 1961, is renamed as Tetra lobulifera (Keifer). This eriophyid mite is capable of inflicting substantial damage on plantation- and native-grown cottonwoods (Populus spp.). We report new State and County collection records from the eastern and northwestern U.S.A. as well as new host records, including Populus grandidentata Michx. (big-tooth aspen), for this pest. This updates the established geographic range of T. lobulzjera, and demonstrates its ability to utilize other host plants in the genus Populus for development.

2004-01-01

212

British Library Electronic Table of Contents (United Kingdom)

Abstract Although photosynthetic thermotolerance has been investigated extensively in cotton leaves, reports on the biochemical influence of the pistil in promoting fertilization thermostability are limited. To evaluate the effect of temperature, genotype, and exogenous calcium application on fertilization and pistil biochemistry in cotton, thermosensitive (cv. ST4554 B2RF) and thermotolerant (cv. VH260) plants were grown under control (30/20-C) or high-temperature (38/20-C) conditions during flowering, and exogenous CaCl2 was applied to flowers 1-day prior to anthesis. Measured pistil parameters included fertilization efficiency; protein concentration; glutathione reductase, superoxide dismutase (SOD) and NADPH oxidase activities; and ATP and calcium levels. Exogenous calcium had no effec...

2011-01-01

213

Materials aspects of multijunction solar cells

Maintenance of C sinks sustains enhanced C assimilation during long-term exposure to elevated [CO2] in Mojave Desert shrubs

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

1991-05-01

214

British Library Electronic Table of Contents (United Kingdom)

During the first few years of elevated atmospheric [CO2] treatment at the Nevada Desert FACE Facility, photosynthetic downregulation was observed in desert shrubs grown under elevated [CO2], especially under relatively wet environmental conditions. Nonetheless, those plants maintained increased A sat (photosynthetic performance at saturating light and treatment [CO2]) under wet conditions, but to a much lesser extent under dry conditions. To determine if plants continued to downregulate during long-term exposure to elevated [CO2], responses of photosynthesis to elevated [CO2] were examined in two dominant Mojave Desert shrubs, the evergreen Larrea tridentata and the drought-deciduous Ambrosia dumosa, during the eighth full growing season of elevated [CO2] treatment at the NDFF. A comprehen...

2011-01-01

215

Magnetic properties of CeRh{sub 2}Si{sub 2} and CePd{sub 2}Si{sub 2} single crystals

Luminescence spectroscopy of Er3+-doped and Er3+, Yb3+-codoped LaPO4 single crystals

Single-crystalline CeRh{sub 2}Si{sub 2} and CePd{sub 2}Si{sub 2} were grown by the Czochralsky pulling method and the temperature dependence of magnetic susceptibility was investigated. The crystalline electric field (CEF) states in each compound were determined by considering the tetragonal CEF Hamiltonian with mean-field approximation. Interactions between Ce{sup 3+} ion and the surrounding ligands in CeRh{sub 2}Si{sub 2} turned out to be strong and highly anisotropic in comparison to CePd{sub 2}Si{sub 2}. (orig.) 10 refs.

1998-01-01

216

Lorentz transmission electron microscopy investigation of magnetically patterned Co/Pt multilayers

LaPO4 single crystals lightly doped with Er3+, and codoped with Er3+ and Yb3+ have been grown by spontaneous nucleation in a lead phosphate flux. Absorption and luminescence spectra have been measured in the visible and near-IR regions and the excited state dynamics has been studied upon pulsed laser excitation. The obtained results have allowed the evaluation of the effective emission cross-sections around 1.5 ?m, that have been found to be similar to important oxide laser crystals doped with Er3+. Efficient visible upconversion has been observed upon excitation at 980 nm in the codoped crystals. This behaviour is attributed to Yb3+-Er3+ energy transfer processes.

2009-05-01

217

LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition

The switching behavior of magnetic patterns prepared by ion irradiation was investigated. Co/Pt multilayers with perpendicular anisotropy and large out-of-plane coercivities 5-6 kOe were grown on electron transparent SiN windows. Regularly spaced 1 micron sized regions, were magnetically pattered via ion beam irradiation through a stencil mask. Lorentz TEM was used to observe in-situ magnetization reversal processes of irradiated regions under well-defined applied magnetic fields. When the in-plane field was increased, domain wall motion was observed, resulting in the alignment of the patterns with the direction of the applied field. The switching mechanism of the in-plane patterns was by domain wall motion.

2000-08-01

218

Layer-by-layer assembly of thin film oxygen barrier

A 15-nm lithium fluoride (LiF) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions. The effect is more pronounced at low substrate temperatures, nucleation density being 10 times higher at {approx} 80 {sup o}C. The effect is ascribed to the ionic chemical nature of LiF, the low work function material used in organic electronic devices, and we propose its use for micro patterning crystalline Si regions in otherwise amorphous Si film.

2009-10-30

219

Large Magnetic Moments of Arsenic-Doped Mn Clusters and their Relevance to Mn-Doped III-V Semiconductor Ferromagnetism

Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.

2008-06-02

220

Kundur [Benincasa hispida (Thunb.) Cogn.]: A potential source for valuable nutrients and functional foods

We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.

2005-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

221

British Library Electronic Table of Contents (United Kingdom)

Kundur [Benincasa hispida (Thunb.) Cogn.], a member of the family Cucurbitaceae, is one of the famous crops that are grown primarily for its fruits and usually recognized with its nutritional and medicinal properties especially in Asian countries. Kundur fruit has been valued as a nutritious vegetable as it provides a good source for natural sugars, amino acids, organic acids, mineral elements and vitamins. A number of medicinal properties such as anti-diarrheal, anti-obesity, anti-ulcer, and antioxidant and diuretic have been ascribed to this fruit of high economic value. As a rich source of functionally important bioactives and therapeutics such as triterpenes, phenolics, sterols, and glycosides, the fruit has been widely used for the treatment of epilepsy, ulcer, and other nervous disor...

2011-01-01

222

Kramers-Kronig Analysis of Infrared Reflectance Spectra for Quaternary In_xAl_yGa_1_-_x_-_yN Alloy

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

In this paper, a Kramers-Kronig (KK) analysis of infrared (IR) reflectance spectrum of quaternary In_0_._0_1Al_0_._0_6Ga_0_._9_3N film grown by molecular beam epitaxy (MBE) is reported. The infrared measurement is performed in the reflection mode at an incident angle of 15 degree sign by Fourier transform infrared (FTIR) spectroscopy at T = 300 K. The Kramers-Kronig analysis of the reflectivity data has been used to obtain the real and imaginary parts of the index of refraction (n and k), and the real and imaginary parts of the dielectric response function (#epsilon#' and #epsilon#') of the materials. Finally, the transverse optical and longitudinal optical phonons for quaternary In_xAl_yGa_1_-_x_-_yN were obtained.

2010-07-07

223

I. Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. II. Large-area uniform growth of Si layer by solid-phase epitaxy. Final report

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

2003-11-17

224

Growth and gas exchange response to water shortage of a maize crop on different soil types

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

1981-01-01

225

British Library Electronic Table of Contents (United Kingdom)

The effect of water shortage on growth and gas exchange of maize grown on sandy soil (SS) and clay soil was studied. The lower soil water content in the SS during vegetative growth stages did not affect plant height, above-ground biomass, and leaf area index (LAI). LAI reduction was observed on the SS during the reproductive stage due to early leaf senescence. Canopy and leaf gas exchanges, measured by eddy correlation technique and by a portable photosynthetic system, respectively, were affected by water stress and a greater reduction in net photosynthetic rate (A N) and stomatal conductance (g s) was observed on SS. Chlorophyll and carotenoids content was not affected by water shortage in either condition. Results support two main conclusions: (1) leaf photosynthetic capacity was unaffec...

2009-01-01

226

Growth and defects of explosives crystals

Growth and defects of explosives crystals

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the polymorphs'' of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes worm holes'' in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100[degrees]C lock in the mechanical twins.

1992-01-01

227

Genetic and environmental interactions determine plant defences against herbivores

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the ``polymorphs`` of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes ``worm holes`` in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100{degrees}C lock in the mechanical twins.

1992-12-01

228

British Library Electronic Table of Contents (United Kingdom)

Summary 1. Plants express multiple defensive traits, but little is known about the genetic stability and phenotypic plasticity of these traits in nature. To investigate sources of variation and their potential ecological consequences for herbivores, we combined field observations of cyanogenic lima bean with laboratory experiments. 2. Field studies in South Mexico revealed a distinct variability of cyanogenic traits within and among wild lima bean populations. To differentiate among genetic variation and the impact of ambient conditions on plant phenotypes, we used seed grown plants as well as clones propagated from high (HC) and low cyanogenic (LC) wild type plants. 3. In growth chamber experiments, we cultivated plants under three intensities each of drought and salt stress, nutrient sup...

2011-01-01

229

Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometry

Focused ion beam implantation induced site-selective growth of InAs quantum dots

An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.

1985-01-15

230

Feasibility investigations of growing and characterizing gallium arsenide crystals in ribbon form. Quarterly progress report 1 Jan-31 Mar 1975

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

2007-09-17

231

Evolution of drought severity and its impact on corn in the Republic of Moldova

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

232

British Library Electronic Table of Contents (United Kingdom)

Droughts in Moldova were evaluated using meteorological data since 1955 and a long time series (1891?2009). In addition, yields for corn (Zea mays L.), a crop widely grown in Moldova, were used to demonstrate drought impact. The main aim is to propose use of the S i (S i-a and S i-m) drought index while discussing its potential use in studying the evolution of drought severity in Moldova. Also, a new multi-scalar drought index, the standardized precipitation?evapotranspiration index (SPEI), is tested for the first time in identifying drought variability in Moldova while comparing it with the commonly used standardized precipitation index (SPI). S i-m, SPI, SPEI, and S i-a indices show an increasing tendency toward more intensive and prolonged severely dry and extremely dry summer months. D...

2011-01-01

233

Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report

Environmental, scanning electron and optical microscope image analysis software for determining volume and occupied area of solid-state fermentation fungal cultures

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

234

British Library Electronic Table of Contents (United Kingdom)

Abstract Here we propose a software for the estimation of the occupied area and volume of fungal cultures. This software was developed using a Matlab platform and allows analysis of high-definition images from optical, electronic or atomic force microscopes. In a first step, a single hypha grown on potato dextrose agar was monitored using optical microscopy to estimate the change in occupied area and volume. Weight measurements were carried out to compare them with the estimated volume, revealing a slight difference of less than 1.5%. Similarly, samples from two different solid-state fermentation cultures were analyzed using images from a scanning electron microscope (SEM) and an environmental SEM (ESEM). Occupied area and volume were calculated for both samples, and the results obtained w...

2011-01-01

235

Electrochemical deposition of indium sulfide thin films using two-step pulse biasing

British Library Electronic Table of Contents (United Kingdom)

Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.

2008-01-01

236

Efficient elimination of sweetpotato little leaf phytoplasma from sweetpotato by cryotherapy of shoot tips

British Library Electronic Table of Contents (United Kingdom)

Shoot tips with 3-4 leaf primordia were excised from in vitro-grown sweetpotato plants (Ipomoea batatas) infected with little leaf phytoplasma (Candidatus Phytoplasma aurantifolia) and subjected to cryotherapy. All plants regenerated from the cryo-treated shoot tips were free of phytoplasma, whereas shoot tip culture or dehydration of shoot tips without subsequent cryotherapy resulted in phytoplasma-free plants at a frequency of only 7-10%. Histological and ultrastructural studies with light and transmission electron microscopy, respectively, indicated that cryotherapy was lethal to all cells except those in the apical dome of the meristem and the two youngest leaf primordia. These surviving parts of the shoot tip contained vascular tissue and sieve elements, but electron microscopy showed...

2008-01-01

237

Effects of seed maturation time and dry storage on light and temperature requirements during germination in invasive Prosopis juliflora

British Library Electronic Table of Contents (United Kingdom)

The effects of time of seed maturation and dry seed storage and of light and temperature requirements during seed incubation on final germination percentage and germination rate were assessed for the invasive shrub Prosopis juliflora (Sw.) D.C., grown under desert environmental conditions of the United Arab Emirates (UAE). Seeds were collected from Fujira on the northern coast of the UAE at different times during the growing seasons (autumn, winter and spring) and were germinated immediately and after 8 months of dry storage under room temperature (20+-3degreeC). Seeds were germinated at three temperatures (15, 25 and 40degreeC) in both continuous light and darkness. The results showed significant effects for time of seed collection, seed storage, light and temperature of seed incubation a...

2006-01-01

238

Effects of chemicals in the presence of cellophane on X-ray-induced point mutation and gene conversion in Aspergillus midulans

Diffuse X-ray scattering study of sublattice ordering among group III atoms in In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P

The presence of washed or unwashed cellophane alone or together with a bleomycin, mitomycin C or hydrochlorothiazide, ('Esidrex') showed no appreciable effect on survival of either unirradiated or irradiated conidia. Irradiation for a period of 20min reduced the survival of conidia to 20%. The growth of irradiated conidia in the presence of bleomycin, mitomycin C or Esidrex is associated with a 2- to 3-fold increase in the frequency of gene convertants, but was not accompanied by an increase in point mutants. When conidia were grown on cellophane but otherwise treated as before the frequency of gene convertants was increased 8-fold, but induction of point mutants was negligible. This effect was the same for irradiated and unirradiated conidia. The environment created by the cellophane in contract with the medium appears to affect the action of each of the three compounds synergistically.

1984-08-01

239

Differences in morphology, gas exchange and root hydraulic conductance before planting in Pinus canariensis seedlings growing under different fertilization and light regimes

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

240

British Library Electronic Table of Contents (United Kingdom)

As the main forestry species in the Canary Islands (Spain), Pinus canariensis is frequently used in afforestation programs. Several nursery techniques are commonly employed to modify its morphology and physiology with the aim of improving post-planting survival and growth. In this work, we studied how fertilization and light regime treatments applied during the nursery period modify biomass allocation patterns and produce effects in gas exchange and root hydraulic conductance. Seedlings were grown for a 6-month period in the nursery under two light regimes (full sunlight and 40% PAR reduction), and three fertilization levels were applied in each light regime. Morphology, biomass allocation patterns, leaf gas exchange and hydraulic conductance of the whole root system were evaluated. Fertil...

2010-01-01

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241

Crop diversification and trade liberalization: Linking global trade and local management through a regional case study

British Library Electronic Table of Contents (United Kingdom)

Some models anticipate that liberalized agricultural trade will lead to increased crop diversity, while other models make the opposite claim. These positions were explored in southwestern British Columbia, Canada where, between 1992 and 1998, government subsidies and other measures designed to protect horticultural farmers were lifted, exposing these farmers to foreign competition. Public hearings on the future of agriculture provided an opportunity to tap the knowledge and experience of people affected by this transition. Analysis of transcripts from these hearings, which was confirmed by industry data, shows that trade liberalization has led to the loss of the local fruit and vegetable processing industry. Stakeholders saw the loss as a major factor affecting the choice of crops grown lo...

2006-01-01

242

Codon-modifications and an endoplasmic reticulum-targeting sequence additively enhance expression of an Aspergillus phytase gene in transgenic canola

British Library Electronic Table of Contents (United Kingdom)

Transgenic plants offer advantages for biomolecule production because plants can be grown on a large scale and the recombinant macromolecules can be easily harvested and extracted. We introduced an Aspergillus phytase gene into canola (Brassica napus) (line 9412 with low erucic acid and low glucosinolates) by Agrobacterium-mediated transformation. Phytase expression in transgenic plant was enhanced with a synthetic phytase gene according to the Brassica codon usage and an endoplasmic reticulum (ER) retention signal KDEL that confers an ER accumulation of the recombinant phytase. Secretion of the phytase to the extracellular fluid was also established by the use of the tobacco PR-S signal peptide. Phytase accumulation in mature seed accounted for 2.6% of the total soluble proteins. The enzy...

2006-01-01

243

Changes in Soil Properties and Vegetable Growth in Preparation for Organic Farming in Hawaii

British Library Electronic Table of Contents (United Kingdom)

Changes in soil properties and vegetable growth were quantified on a low-fertility tropical soil. Four treatments (two composts, urea, and control) were applied to an Oxisol (Rhodic Haplustox, Wahiawa series) in a field on Oahu, Hawaii. Chinese cabbage (Brassica rapa, Chinensis group) and eggplant (Solanum melongena) were grown sequentially as test crops. Soil quality as measured by hot-water-soluble carbon, dehydrogenase activity, and cation exchange capacity (CEC) increased by compost amendments. Total organic carbon or carbon dioxide (CO2) respiration rate did not correlate with the soil amendments. Nitrogen (N) nutrition was the main factor that improved growth and carotenoid content in cabbage. The urea treatment promoted better growth in cabbage, whereas good-quality compost, made of...

2011-01-01

244

Buried-heterostructure semiconductor Raman laser with threshold pump power less than 1 W

Bioethics and the Stem Cell Research Debate

The low-power operation of a semiconductor buried-heterostructure Raman laser is reported. We are developing these devices for very wide-band optical communication in the terahertz frequency region. It has a structure with a GaP active layer and Al{sub {ital x}}Ga{sub 1{minus}{ital x}}P cladding layers, which are grown by the temperature-difference method under controlled vapor pressure. By making the stripe width 30--40 {mu}m, we have obtained a threshold pump power of 500 mW. A low-threshold semiconductor Raman laser can be pumped by semiconductor injection lasers. We have measured the optical loss of the waveguide and detected the contribution from scattering and leakage at heterointerfaces.

1989-12-01

245

Bandgap properties of the indium sulfide thin-films grown by co-evaporation

Bioethics--the study of ethical issues in science and medicine--has grown to become a significant academic and service-oriented discipline with its own research centers, conferences, journals, and degree programs. As these issues have moved to the center of public debate, the law has assumed an increasingly important place in the discipline of bioethics. Today, embryonic stem cell research stands out as a critically important issue about which the U.S. has neither ethical consensus nor clear, comprehensive regulation. The ethical debate centers on the fact that stem cell research involves the destruction of very early human embryos. This article provides a brief scientific background followed by a discussion of key ethical and legal/regulatory issues that surround embryonic stem cell research.

2005-12-01

246

British Library Electronic Table of Contents (United Kingdom)

In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffraction (XRD) analyses. The optical absorption coefficient ? of this indium sulfide film has been deduced from reflectivity R(?) and transmission T(?) measurements. The fit of the curve representing ?(h?) suggests that the ?-In2S3 has an indirect bandgap of 2.01?eV. Density functional theory (DFT) calculations are performed on this indium sulfide compound, using TB-LMTO code. Through these band structure investigations, an indirect bandgap is predicted as observed experimentally. The top of the valen...

2009-01-01

247

Assessing vineyard water status using the reflectance based Water Index

British Library Electronic Table of Contents (United Kingdom)

In the Mediterranean arc, vines for wine production are mainly grown without the support of irrigation. Under such conditions, site variables affecting the extent and seasonal timing of water deficits are the dominant environmental constraints for grape production. Moreover, water availability and vine water status are the factors most comprehensively determining fruit composition and, thus, wine quality. Therefore, monitoring the extent of water stress in vines might be a valuable tool for the optimisation of grape yield and quality. The objective of this study was to evaluate the feasibility of using the reflectance based Water Index (WI) to estimate vine water status at the leaf and canopy levels. The study was conducted on Vitis vinifera cv. Chardonnay potted plants submitted to contra...

2010-01-01

248

Assessing the effect of an antimicrobial wound dressing on biofilms

British Library Electronic Table of Contents (United Kingdom)

ABSTRACT To date the effect of silver-containing wound dressings on biofilms, known to be present in chronic wounds, has not been determined or documented. In this current study, we aimed to determine the antimicrobial effect of a silver-containing dressing on biofilms grown in a chambered slide model. Before the addition of a wound dressing onto a 24-hour biofilm, composed of either Pseudomonas aeruginosa, Enterobacter cloacae, Staphylococcus aureus, or a mixed bacterial community, a fluorescent dye was applied. This enabled the viability of sessile bacteria to be monitored in real-time, using a rapid form of confocal laser scanning microscopy over a contact time period of 48 hours. By analyzing all the three-dimensional data generated from the confocal time-lapse sequences, 90% of all se...

2008-01-01

249

AlGaInP visible vertical cavity surface emitting lasers operating with gain contributions from the [ital n]=2 quantum well transition

Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect

We report the characteristics of visible vertical cavity surface emitting laser diodes. Wafers are grown such that the Fabry--Perot resonance wavelength changes with position from 690 to 620 nm, overlapping to varying degrees with the [ital n]=1 and [ital n]=2 quantum well gain peaks at [similar to]670 and 650 nm. Gain guided devices are tested across the entire wafer, and pulsed room temperature lasing is observed from 634.6 to 663.2 nm. Our results suggest that gain contributions from the second quantized state are required to overcome high cavity losses in order to achieve lasing.

1993-12-20

250

Accumulation, Activity and Localization of Cell Cycle Regulatory Proteins and the Chloroplast Division Protein FtsZ in the Alga Scenedesmus quadricauda under Inhibition of Nuclear DNA Replication

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

1991-05-01

251

British Library Electronic Table of Contents (United Kingdom)

Synchronized cultures of the green alga Scenedesmus quadricauda were grown in the absence (untreated cultures) or in the presence (FdUrd-treated cultures) of 5-fluorodeoxyuridine, the specific inhibitor of nuclear DNA replication. The attainment of commitment points, at which the cells become committed to nuclear DNA replication, mitosis and cellular division, and the course of committed processes themselves were determined for cell cycle characterization. FdUrd-treated cultures showed nearly unaffected growth and attainment of the commitment points, while DNA replication(s), nuclear division(s) and protoplast fission(s) were blocked. Interestingly, the FdUrd-treated cells possessed a very high mitotic histone H1 kinase activity in the absence of any nuclear division(s). Compared with the ...

2008-01-01

252

A novel in vitro flat-bed perfusion biofilm model for determining the potential antimicrobial efficacy of topical wound treatments

British Library Electronic Table of Contents (United Kingdom)

Abstract Aims: To develop an in vitro flat-bed perfusion biofilm model that could be used to determine the antimicrobial efficacy of topically applied treatments. Methods and Results: Pseudomonas aeruginosa and Staphylococcus aureus biofilms were grown within continuously perfused cellulose matrices. Enumeration of the biofilm density and eluate was performed at various sampling times, enabling determination of the biofilm growth rate. Two antimicrobial wound dressings were applied to the surface of mature biofilms and periodically sampled. To enable real-time imaging of biofilm growth and potential antimicrobial kinetics, a bioluminescent Ps. aeruginosa biofilm was monitored using low-light photometry. Target species produced reproducible steady-state biofilms at a density of c. 107 per b...

2009-01-01

253

A New Stem Taper Function for Short-rotation poplar

680-nm band GaInP/AlGaInP tapered stripe laser

A new stem taper function was established for individual trees of two poplar hybrid clones grown on a short-rotation coppice. The model could be easily fitted and required three parameters to be estimated. It can be used to estimate both diameter at a given height and height for a given top diameter. Two of the three parameters controlled the conical and the neiloid parts of the stem. Significant differences in these parameters were observed between the two clones even if no differences were observed for diameter at breast height or total height of the stem. The model could not be integrated to calculate volumes (total volume, merchantable volume), which were estimated by numerical integration. However, use of this new model allows the optimal length of billets to be determined and thus maximizes the merchantable biomass of poplar in short-rotation coppice by minimizing the biomass of residues.

2003-07-01

254

Synthesis of Si nanowires for MEMS cantilever sensor applications

A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.

1987-11-16

255

Studies on inherited sterility induced in the progeny of gamma irradiated cotton leaf worm, Spodoptera littorals (Boisd.)

We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the nanowires enabled by a significantly enhanced silicon surface ...

2004-12-01

256

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Full - grown pupae of the cotton leaf worm Spodoptera littorals (Boisd.) were gamma - irradiated with low doses of 25,50,75, or 100 Gy for male line and with 50 or 100 Gy for female line . The effects on reproduction, development and sex ratio were the biological aspects studied among P1,F1,F2 and F 3 generations . Also, the effects of dose accumulation applied grown male pupae through two or three filial generations and the retarded influence on their F1,F2,and F 3 progeny were examined. In another trial the histological examinations for ovaries and testes of irradiated parents and for their generation were made . The F1 males were more sterile than irradiated parental males while F1 females were more fertile than their irradiated parental females. Irradiation of P1 males did not clearly affect neither the percentage of mated females nor the average number of spermatophores per mated female among the individuals of P1,F1,F2 and F 3 ...

257

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {l_brace}311{r_brace} defects during ...

1997-05-01

258

Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left brace#311#right brace# defects during Ostwald ...

259

Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant ...

1992-12-01

260

Optical characterization of long-term ordered and nanocrystalline GaP

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization ...

1992-12-01

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261

Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and doped GaP single crystals grown over 40 years ago and evaluated ...

262

Influence of phosphorus vapor ambient for InGaAsP growth on GaAs substrate

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest ...

1999-02-23

263

High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of increasing the flow rate ...

1986-12-01

264

High density of nanodots on atomically flat CeO_2 buffer layers for inducing effective vortex-pinning centers in YBa_2Cu_3O_7_-_#delta# films on sapphire

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

2005-04-18

265

Genetic analysis of carbon isotope discrimination and its relation to yield in a wheat doubled haploid population.

Epitaxial CeO_2 buffer layers were fabricated by pulsed laser deposition (PLD) on r-cut sapphire substrates. An atomically flat CeO_2 surface with a high density of nanodots was formed by a self-assembly process. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy investigation showed that the nanodots were CeO_2 other than impurities. YBa_2Cu_3O_7_-_#delta# (YBCO) thin films were then grown on the annealed and the as-grown CeO_2-buffered sapphires by PLD. The transport measurement results showed that the nanodots enhanced the effective pinning potential and significantly increased critical current density (J _c). Especially, YBCO films with an annealed CeO_2 buffer layer showed a high J _c peak when the applied field was directed along the c-axis of YBCO. Cross-section transmission electron microscopy investigation revealed that the J _c peaks in YBCO with annealed CeO_2 buffer layer is caused by c-axis ...

2006-12-05

266

Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces

Carbon isotope discrimination (?(13) C) is considered a useful indicator for indirect selection of grain yield (GY) in cereals. Therefore, it is important to evaluate the genetic variation in ?(13) C and its relationship with GY. A doubled haploid (DH) population derived from a cross of two common wheat varieties, Hanxuan 10 (H10) and Lumai 14 (L14), was phenotyped for ?(13) C in the flag leaf, GY and yield associated traits in two trials contrasted by water availability, specifically, rain-fed and irrigated. Quantitative trait loci (QTLs) were identified by single locus and two locus QTL analyses. QTLs for ?(13) C were located on chromosomes 1A, 2B, 3B, 5A, 7A and 7B, and QTLs for other traits on all chromosomes except 1A, 4D, 5A, 5B and 6D. The population selected for high ?(13) C had an increased frequency of QTL for high ?(13) C, GY and number of spikes per plant (NSP) when grown under rain-fed conditions and only for high ?(13) C and NSP when ...

2011-09-01

267

Electric-field dependence of electroreflectance and photocurrent spectra at visible wavelengths in MOVPE-grown InAlGaP multiple strained quantum-well structures

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the surface. Cross-sectional TEM images revealed that the #beta#-FeSi_2 growth continued beneath the Si surface. The part of the #beta#-FeSi_2 nanodot beneath the surface ...

2005-08-15

268

Effects of compost and phosphate amendments on arsenic mobility in soils and arsenic uptake by the hyperaccumulator, Pteris vittata L

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for visible-wavelength optical modulator ...

1993-12-31

269

Determination of a various ions such as alkali metals in leaves, stems, roots and seeds of the radish and their distribution

Chinese brake fern (Pteris vittata L.), an arsenic (As) hyperaccumulator, has shown the potential to remediate As-contaminated soils. This study investigated the effects of soil amendments on the leachability of As from soils and As uptake by Chinese brake fern. The ferns were grown for 12 weeks in a chromated-copper-arsenate (CCA) contaminated soil or in As spiked contaminated (ASC) soil. Soils were treated with phosphate rock, municipal solid waste, or biosolid compost. Phosphate amendments significantly enhanced plant As uptake from the two tested soils with frond As concentrations increasing up to 265% relative to the control. After 12 weeks, plants grown in phosphate-amended soil removed >8% of soil As. Replacement of As by P from the soil binding sites was responsible for the enhanced mobility of As and subsequent increased plant uptake. Compost additions facilitated As uptake from the CCA soil, but decreased As uptake from the ASC ...

2003-11-01

270

Cucumber nitrogen utilization as affected by compost levels and nitrogen rates using "1"5N technique

Determination, uptake and distribution of various ions such as alkali metals in three different parts (leaf, stem and root) and seeds of radish (Kaiware daikon) were examined using flame emission spectrometry and ICP-AES. In order to examine the influence of concentration alkali metal ion concentration in the radish culture solution on the uptake and distribution of these metals, the radish was grown at pH 5.6 in solutions containing alkali metal chloride at concentrations ranging from 10{sup -5} to 10{sup -1} mol dm{sup -3}. When the radish were grown in culture solution with alkali metal ions of low concentrations (10{sup -5} and 10{sup -4} mol dm{sup -3}), Na, K, Rb and trace Li were detected in leaves, stems and roots while Cs was scarcely detected. However, the contents of Na, K, Li in these organs were the same as those in radish cultivated in pure water. An increase of Rb uptake was observed with an increased Rb concentration. In the ...

1995-05-01

271

A Wheat Homolog of MOTHER OF FT AND TFL1 Acts in the Regulation of Germination.

The beneficial effect of compost application to the sandy soil on dry matter production of shoots and fruits as well as its effect on l5N-uptake and nitrogen utilization percent of cucumber plant (Cucumis sativus L.) were studied under field conditions. Two types of natural compost (i.e. sugar cane bagasse (SC) and beet compost (BC)) with three levels (2, 4, 6 ton/fed) in addition to check treatment for each kind of compost (sheep manure with rate of 20 in/fed) combined with three rates of nitrogen fertilizer rates (50, 75, 100% from the recommended rate, i.e. 75 kg /fed) were used. The bagasse compost in both seasons gave a significantly higher response than the beet compost. There was a greet reduction in cucumber dry weight, N yield, Ndff%, FN yield and N utilization % of shoots and fruits as the level of compost application decreased. However, cucumber plants grown on high compost application level (6 ton/fed) were similar in their responses to plants ...

272

Use of selective catalytic reduction for control of NO{sub x} emissions from power plants

Seed dormancy is an adaptive mechanism and an important agronomic trait. Temperature during seed development strongly affects seed dormancy in wheat (Triticum aestivum) with lower temperatures producing higher levels of seed dormancy. To identify genes important for seed dormancy, we used a wheat microarray to analyze gene expression in embryos from mature seeds grown at lower and higher temperatures. We found that a wheat homolog of MOTHER OF FT AND TFL1 (MFT) was upregulated after physiological maturity in dormant seeds grown at the lower temperature. In situ hybridization analysis indicated that MFT was exclusively expressed in the scutellum and coleorhiza. Mapping analysis showed that MFT on chromosome 3A (MFT-3A) colocalized with the seed dormancy quantitative trait locus (QTL) QPhs.ocs-3A.1. MFT-3A expression levels in a dormant cultivar used for the detection of the QTL were higher after physiological maturity; this increased expression ...

2011-09-01

273

Unusual carbon partitioning during phosphate deficiency in celery, a mannitol-synthesizing species

This report describes selective catalytic reduction (SCR) technologies which offer an economical and effective means of reducing nitrogen oxide emissions from electricity generation facilities and reviews the feasibility and cost effectiveness of employing this technology on electricity generating facilities in Ontario. Based on experiences in the United States, in British Columbia, and internationally in Japan and Germany, the indication is that the technology for the installation of SCR systems on new gas-fired combined cycle power plants and existing coal-fired power plants has grown enormously during the past decade, and has been established as the control technology of choice for nitrogen oxide emissions. It is widely acknowledged to reduce power plant nitrogen oxide emissions, and do so at a very reasonable incremental cost. It is estimated that the annualized cost of installing and operating a SCR at a large gas-fired combined cycle facility in Ontario would ...

1999-07-01

274

Transient enhanced diffusion of Sb and B due to MeV silicon implants

Mannitol and sucrose are the main photosynthetic products and translocated carbon compounds in celery (Apium graveolens L.). Carbon partitioning was studied in greenhouse-grown celery plants supplied with a nutrient solution containing or lacking phosphate (P). P-deficient plants developed new leaves at about the same rate as control plants, but showed greatly reduced growth of leaves and petioles; root growth was apparently unaffected. P-deficient leaves contained less mannitol and more sucrose than control leaves. Starch content increased with P-deficiency only in mature (the most photosynthetically-active) leaves, and then amounted to less than 10 mg/g fresh weight. Similarly, when {sup 14}CO{sub 2} was supplied to intact plants, P-deficient leaves contained less label in mannitol and more in sucrose than did control leaves; labeling of starch changed little. The P-status of celery leaves apparently affects the partitioning of carbon between mannitol and sucrose ...

1989-04-01

275

Transient enhanced diffusion of Sb and B due to MeV silicon implants

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We ...

1997-06-01

276

The influence of soil and coppice cycle on the rooting habit of short rotation poplar and willow coppice

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We discuss possible ...

277

The formation of vertically aligned biaxial tungsten nanorods using a novel shadowing growth technique

The increased demand for renewable energy sources has led to large areas of former agricultural land being proposed for short rotation coppice (SRC) establishment. Concerns expressed over the potential impacts of tree roots on buried archaeological evidence led to a study into the rooting habit of SRC. Roots were exposed in trenches dug within a variety of willow and poplar clonal stands grown on brown earth, pelosol, ground-water gley and surface-water gley soils. Root depths and diameters were recorded in each of the 33 trenches. In total, over 18,000 roots were measured on 264 coppice stools. The rotation length, species and stool location within a block were all found to influence the maximum size of root produced. Soil type had some influence on the root number and depth, but the pattern of root distribution down the soil profile was similar for both species. (author)

2004-06-01

278

The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon

Biaxially textured tungsten nanorods (A15 crystal structure) have been grown by oblique angle DC magnetron sputtering using a novel rotation mode called 'two-step rotation'. In this mode, the substrate is given a fast rotation through 1800 at 90 rpm and this is followed by a rest period of 30 s. These nanorods are vertically aligned and have a [100] texture normal to the substrate along with preferential in-plane texture as shown by x-ray pole figure analysis. In contrast, the tungsten nanorods obtained without substrate rotation are slanted at an angle of ?450 and have a [100] texture tilted 160 with respect to the substrate normal. The flux is incident from two diametrically opposite points on the sample at an oblique angle, averaging out the growth into vertical columns that retain the in-plane texture. Scanning electron microscopy shows that the tungsten nanorods have a mixture of {211} and {421} crystal habits; these planes are both minimum surface energy ...

2009-11-18

279

The effect of potassium nutrition on "1"3"7Cs uptake in two upland species

High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is to show that the UHT ...

2005-02-15

280

The effect of boron implant energy on transient enhanced diffusion in silicon

Agrostis capillaris (Agrostis) and Calluna vulgaris (Calluna), two species with differing phenologies and widespread presence in upland areas of Britain where high Chernobyl fallout occurred, were grown in pot culture with varying concentrations of potassium in the rooting medium. Tissue content of potassium increased with increasing supply in both species. Roots, excised from these plants, were placed in a solution of "1"3"7Cs-labelled caesium chloride for 15 min to determine uptake potential. There were clear negative relationships between the rate of uptake of "1"3"7Cs by both species and (a) the concentration of potassium supplied and (b) plant issue potassium concentrations. With Agrotis, there was an approximately ten-fold difference in "1"3"7Cs uptake between potassium-deficient and optimum plants; with Calluna, it was approximately eight-fold. These results demonstrate the suppression of "1"3"7Cs uptake into plants by potassium supply. (author).

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

281

The Structural and Optical Properties of GaAs1-xPx /GaAs

Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results imply there are at least two sources of TED ...

1997-02-01

282

The Simultaneous effect of gamma radiation on susceptibility of the cotton leaf worm Spodoptera Littoralis (Boisd.) to methomy

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the GaAs1-xPx p-n junction structures increase of ...

2008-08-25

283

Synthetic aperture radar image of agricultural fields with surface drainage network: simulation and spatial information retreival

The simultaneous effects of irradiating full grown pupae of Spodoptera Littoralis with doses 30 and 40 krad followed by topical treatment of adults with methomyl were studied. Gamma rays decreased the toxicity of methomyl against adult moths. The obtained LD_5_0 values for male moths emerging from unirradiated or irradiated pupae with 30 or 40 krad were 7, 9.93 and 10.33 u g/g. b.wt., respectively. F1 larvae (produced from unirradiated females mated to irradiated males) became more tolerant to methomyl by increasing radiation doses from 5 to 30 krad. The toxicity of methomyl to F1, F2 and F3 larvae (whose male parents had been irradiated in the pupal stage with 10 krad) was less than its toxicity to the larvae produced from unirradiated parents. F2 and F3 larvae were more tolerant to methomyl effect than the F1 larvae.

284

Study of structural and optical properties of sprayed WO{sub 3} thin films using enhanced characterization techniques along with the Boubaker Polynomials Expansion Scheme (BPES)

We develop a 3-D model to simulate the synthetic aperture radar (SAR) image formation process of an undulated vegetation canopy such as corn grown in fields with large periodic drainage reliefs. We explain how the simulated SAR image of undulated vegetation medium is obtained by the convolution of a 2-D slice of the 3-D simulated SAR system point spread function [(PSF), emulating the SAR beam modeled by a cosine modulated Gaussian], with the 2-D projection of the observed undulated vegetation canopy (modeled with scatterers randomly distributed in 3-D undulated space) followed by the extraction of each look envelope, the summation of looks, and sampling in azimuthal and range directions. Our model is useful to study the parameters involved in the formation and the analysis of SAR images of undulated vegetation medium. Validation of simulations made with actual SAR images shows that undulated corn crop canopies are well characterized by the mean contrast of the ...

2001-10-01

285

Study of structural and optical properties of sprayed WO3 thin films using enhanced characterization techniques along with the Boubaker Polynomials Expansion Scheme (BPES)

In this study, WO{sub 3} thin films were grown on glass substrates using an aqueous solution containing tungstate (NH{sub 4}){sub 2}WO{sub 4} as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at T{sub s} = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra in 300-1800 nm domain. The ...

2009-11-13

286

Strontium isotope ratios and the origin of anorthosites

In this study, WO3 thin films were grown on glass substrates using an aqueous solution containing tungstate (NH4)2WO4 as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at Ts = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T(?) and reflectance R(?) spectra in 300-1800 nm domain. The refractive and absorption indexes, n and k were ...

2009-11-13

287

Strain enhanced electron spin polarization observed in photoemission from InGaAs

Anorthosites are rocks consisting almost completely of calcic plagioclase, usually from andesine to labradorite. They are not widespread, and until recently were of no economic interest. However, with the advance of the new global tectonics, which has excited considerable interest in the structure and composition of upper-mantle rocks, interest in the anorthosites has grown. This has particularly been the case since the discovery of anorthosites on the moon, where they appear to be more widespread than on the earth. Data have recently been obtained on the strontium isotope compositions of anorthosite intrusions in the Dzhugdzhur-Stanovoy zone and in the rocks surrounding them, which have revealed some unexpected features. The paper describes the geological features of anorthosites, initial concepts on strontium isotope geochemistry, strontium isotope compositions of this region, and discusses some genetic consequences from the isotope data. Although the data of ...

1986-01-01

288

Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin polarization for ...

1991-05-06

289

Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells

Ga{sub 0.6}In{sub 0.4}P/(Al{sub 0.8}Ga{sub 0.2}){sub 0.4}In{sub 0.6}P strain-compensated multiple quantum wells (SCMQW) and Ga{sub 0.5}In{sub 0.5}P/(Al{sub 0.4}Ga{sub 0.6}){sub 0.5}In{sub 0.5}P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

2003-02-15

290

Soil less culture; I sistemi di coltivazione senza suolo

Ga_0_._6In_0_._4P/(Al_0_._8Ga_0_._2)_0_._4In_0_._6P strain-compensated multiple quantum wells (SCMQW) and Ga_0_._5In_0_._5P/(Al_0_._4Ga_0_._6)_0_._5In_0_._5P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

2003-02-15

291

Short-wavelength (approx. 625 nm) room-temperature continuous laser operation of In/sub 0. 5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0. 5/P quantum well heterostructures

The paper gives a general view of techniques and systems related to soil less culture developed in the last years (on substrate in beg; NFT; Ebb-Flood, aeroponic,..) taking into account their management and problems (water quality, control of plant nutrition and irrigation; substrates; pathological aspects,..). The evolution, now in progress, of soil less culture from open to closed system as a way to realized an environmental friendly growing system, is considered. When plants are grown with open cycle techniques a large amount of waste solution, with an a high content of nutrients, are discharged in soil and water. Furthermore, they need an extra-utilization of water and fertilizers. Another aspect is the utilization of low cost substrates, which can be reused for more than one cultural cycle without negative effects on yield, and also finally discharged without negative effects on the environment. The development of soil less culture in countries, such as Italy, ...

1996-01-01

292

Remobilization of boron, photosynthesis, phenolic metabolism and anti-oxidant defense capacity in boron-deficient turnip (Brassica rapa L.) plants

Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

1988-04-18

293

British Library Electronic Table of Contents (United Kingdom)

Abstract Turnip (Brassica rapa L.) plants were grown at adequate (25 mmol L-1) or low (<2.5 mmol L-1) boron (B) supply in nutrient solution for 1 month. The shoot and root dry weight was inhibited by up to 77% and 45%, respectively, in response to low B supply. The results of a retranslocation experiment showed that loaded B in the mature leaves was depleted rapidly during the experimental period and that this B was retranslocated to younger leaves as judged by B depletion from mature leaves simultaneously with the appearance of B in new leaves. Up to 89% of the B content of mature leaves was lost during 4 weeks of growth under B-deficient conditions. In addition, in B-deficient plants, a greater proportion of the total plant B was allocated to young leaves compared with B-sufficient plant...

2010-01-01

294

Radiological and Environmental Research Division: ecology. Annual report, January-December 1982

Probiotics inhibit enteropathogenic E. coli adherence in vitro by inducing intestinal mucin gene expression.

This is the annual report of the Radiological and Environmental Division of the Argonne National Laboratory for 1982. Studies of the effects of ozone on crop growth and yield have been carried out by the Terrestrial Ecology Group for winter wheat and for sorghum. The Microcosms for Acid Rain Studies (MARS) facility was completed in the early summer. Controlled investigations of plant and soil responses in acid rain were initiated with crop plants grown in two different midwestern soil types. The Transuranics Group has found that the solubility and adsorptive behavior of plutonium previously observed at fallout concentrations in natural waters (approx. 10/sup -16/ to 10/sup -18/ M) is applicable at plutonium concentrations as high as 10/sup -8/ M. The Lake Michigan eutrophication model has been adapted to operation in a Monte Carlo mode. Simulations based on yearly phosphorus loadings and winter conditions were selected at random from prescribed probability ...

1983-09-01

295

Preparation of a high-J sub c YBCO bulk superconductor by the platinum doped melt growth method

Probiotic agents, live microorganisms with beneficial effects for the host, may offer an alternative to conventional antimicrobials in the treatment and prevention of enteric infections. The probiotic agents Lactobacillus plantarum 299v and Lactobacillus rhamnosus GG quantitatively inhibited the adherence of an attaching and effacing pathogenic Escherichia coli to HT-29 intestinal epithelial cells but did not inhibit adherence to nonintestinal HEp-2 cells. HT-29 cells were grown under conditions that induced high levels of either MUC2 or MUC3 mRNA, but HEp-2 cells expressed only minimal levels of MUC2 and no MUC3 mRNA. Media enriched for MUC2 and MUC3 mucin were added exogenously to binding assays and were shown to be capable of inhibiting enteropathogen adherence to HEp-2 cells. Incubation of L. plantarum 299v with HT-29 cells increased MUC2 and MUC3 mRNA expression levels. From these in vitro studies, we propose the hypothesis that the ability of probiotic agents ...

1999-04-01

296

Potassium rate alters the antioxidant capacity and phenolic concentration of basil (Ocimum basilicum L.) leaves

Recently we have found a highly effective additive for the melt growth processings attaining high critical currents in YBCO superconductor. It is platinum and it behaves as an effective grain growth inhibitor for the Y{sub 2}BaCuO{sub 5} phase. Even with less than 1 wt.% doping, Y{sub 2}BaCuO{sub 5} particles becomes less than one micron in size and distribute themselves to become homogeneously embedded in the large grown YBa{sub 2}Cu{sub 3}O{sub y} grains. The sample shows large magnetic hysteresis and a typical J{sub c} value estimated by using Bean's model critical state model is 18000 A/cm{sup 2} at 77 K and 1 T. We found that rhodium has a similar remarkable effect. (orig.).

1991-06-15

297

British Library Electronic Table of Contents (United Kingdom)

In the current study, we have determined how potassium rate affects the phenolic levels and antioxidant properties of three cultivars of basil (Ocimum basilicum L.) leaves: Dark Opal, Sweet Thai, and Genovese. Potassium rate increased the total phenolic concentration in basil, with basil treated at the highest potassium rate, 5.0mMK, containing greater phenolic levels than basil treated at the lowest potassium rate, 1.0mMK (p=0.008). Basil grown at 5.0mMK also had higher concentrations of rosmarinic (p=0.005) and chicoric (p<0.001) acids compared to lower potassium treatment levels. Correspondingly, 1.0mMK basil had lower DPPH (2,2prime-diphenyl-1-picrylhydrazyl) (p0.005) and FRAP (ferric reducing antioxidant power, p=0.043) antioxidant capacities compared to basil treated at higher potass...

2010-01-01

298

Positioning of self-assembled InAs quantum dots by focused ion beam implantation

Photoconductive ultraviolet detectors based on ZnO films

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from positioned QDs confirm their ...

2006-07-01

299

Photoconductive ultraviolet detectors based on ZnO films

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant {tau} obtained from the curve fitting represents the time accumulation during the process. The ...

2006-12-15

300

Persistence of terbufos and its metabolites in soil and maize

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant #tau# obtained from the curve fitting represents the time accumulation during the process. The ...

2006-12-15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

301

Persistence of paraquat in the soil and observations with other herbicides relevant to the theme of bound residues

Degradation of "1"4C terbufos was studied under greenhouse conditions. A mixture of "1"4C labelled compound (2.48 x 10"4 Bq of O-ethyl-1- "1"4C) und unlabelled compound (0.09 g of the granule formulation Counter 10 G) was applied to pots containing 750 g of sandy loam clay Ultisol soil with 4.9% organic matter and a cation exchange capacity of 7.6. Two treatments were established, one where maize (cultivar Cristiani) was grown and the other without plants. The soil and plants were extracted at 0, 4, 8, 16, 32 and 64 days and analyzed by a liquid scintillation counter, gas chromatography-flame photometric detector (GC-FPD) and autoradiography. The total "1"4C compounds extracted on day 64 were 31 #+-# 5.6% of the radioactivity applied in the treatments with plants and 46.1 #+-# 1.1% without plants. From the autoradiography results it can be concluded that all times the compounds identified by this technique were terbufos, terbufos sulphoxide and terbufos sulphone. ...

1996-07-01

302

Performance of ZnMoO4 crystal as cryogenic scintillating bolometer to search for double beta decay of molybdenum

Results from three separate experiments that have some relevance to bound residues are reported. In the first, "1"4C-labelled paraquat was lost when applied to soil in the field, about 26% of the radioactivity disappearing in 15 months, whereas in laboratory incubation studies there was no loss of radioactivity in one year. Two possible explanations are (i) that there was photolytic decomposition in the field, (ii) the preparation of the soil for the laboratory study upset the microbial ecology of the soil to the detriment of organisms that can degrade paraquat. In an experiment with "1"4C-labelled isoproturon, there was an indication that there was slightly more "1"4C in the unextractable humin fraction in soil in which wheat plants were grown than in bare soil. Work in the UK, Federal Republic of Germany and in Switzerland has shown that the phytotoxicity of residues of atrazine, carbetamide, chloridazone, propyzamide, simazine, lenacil, monolinuron, linuron, ...

1984-04-01

303

Partial top dielectric stack distributed Bragg reflectors for red vertical cavity surface emitting laser arrays

Zinc molybdate (ZnMoO4) single crystals were grown for the first time by the Czochralski method and their luminescence was measured under X ray excitation in the temperature range 85-400 K. Properties of ZnMoO4 crystal as cryogenic low temperature scintillator were checked for the first time. Radioactive contamination of the ZnMoO4 crystal was estimated as <0.3 mBq/kg (228-Th) and 8 mBq/kg (226-Ra). Thanks to the simultaneous measurement of the scintillation light and the phonon signal, the alpha particles can be discriminated from the gamma/beta interactions, making this compound extremely promising for the search of neutrinoless Double Beta Decay of 100-Mo. We also report on the ability to discriminate the alpha-induced background without the light measurement, thanks to a different shape of the thermal signal that characterizes gamma/beta and alpha particle interactions.

2010-01-01

304

New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon

Room temperature continuous wave operation of red ([lambda][sub 0] [approximately] 660 nm) vertical cavity surface emitting laser arrays is reported. The 1 [times] 64 arrays have a pitch of 100 [mu]m with device diameters of 15 [mu]m with device diameters of 15 [mu]m. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGaInP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operation simultaneously with peak output powers >0.45 mW, threshold current <1.5 mA, and threshold voltages [<=] 2.7 V. The differential quantum efficiencies exceed 10%.

1994-12-01

305

New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si{sub 1-y}C{sub y} layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by the I's ion beam injected through a ...

2003-05-01

306

Near-infrared photodetectors based on mercury indium telluride single crystals

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si_1_-_yC_y layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by the I's ion beam injected through a sub-micron dimension ...

2003-05-01

307

Nanoparticles and their tailoring with laser light

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the ...

2008-03-01

308

Morphology and luminescence properties of ZnO layers produced by magnetron spattering

Monodisperse noble metal nanoparticles are of tremendous interest for numerous applications, such as surface-enhanced Raman spectroscopy, catalysis or biosensing. However, preparation of monodisperse metal nanoparticles is still a challenging task, because typical preparation methods yield nanoparticle ensembles with broad shape and/or size distributions. To overcome this drawback, tailoring of metal nanoparticles with laser light has been developed, which is based on the pronounced shape- and size-dependent optical properties of metal nanoparticles. I will demonstrate that nanoparticle tailoring with ns-pulsed laser light is a suitable method to prepare nanoparticle ensembles with a narrow shape and/or size distribution. While irradiation with ns-pulsed laser light during nanoparticle growth permits a precise shape tailoring, post-grown irradiation allows a size tailoring. For example, the initial broad Gaussian size distribution of silver nanoparticles on quartz ...

2009-07-15

309

Monte-Carlo simulations of 2-MeV #alpha#-particle channeling in Si_1_-_xSn_x alloy

We show that the morphology and the luminescence properties of ZnO layers produced by magnetron sputtering can be controlled by technological parameters of sputtering, particularly by the ratio of argon to oxygen gases in the gas flow during the growth process. Smooth and flat layers were produced with a high Ar/O ratio, while porous layers with various morphologies were obtained with a low Ar/O ratio. The layers produced with O/Ar ration equal to 10 exhibit extremely high near-bandgap luminescence intensity even higher in comparison with bulk ZnO single crystals. The free carrier density estimated from the analysis of photoluminescence spectra is also very high in these samples suggesting that these technological conditions promote both optical and electrical activation of the doping Al impurity. The samples grown with high Ar/O ratios exhibit strong visible emission which is controlled by the technological conditions.

2011-07-07

310

Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces

Monte-Carlo simulations of 2-MeV #alpha#-particle channeling in Si_1_-_xSn_x alloys with 0#<=#x#<=#1 have been performed. The simulations are compared with measured channeling-angular scans for strained Si_0_._9_5Sn_0_._0_5 layers grown by molecular beam epitaxy (MBE). Agreement between simulated and measured angular scans can only be achieved if we assume a deviation of the crystal structure from the ideal one. This deviation can be attributed to a mosaic structure in the films and to an atomic-scale distortion of the crystal lattice due to an expected difference in the bond lengths between the Si-Si, Si-Sn and Sn-Sn atoms (such a difference in bond lengths has been observed in the epitaxial Si_1_-_xGe_x system). The contributions from both of these imperfections are estimated and discussed.

2000-04-01

311

Microwave waste processing technology overview

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 Hz)

2006-07-01

312

Microaerophilic growth and induction of the photosynthetic reaction center in Rhodopseudomonas viridis

Applications using microwave energy in the chemical processing industry have increased within the last ten years. Recently, interest in waste treatment applications process development, especially solidification, has grown. Microwave waste processing offers many advantages over conventional waste treatment technologies. These advantages include a high density, leach resistant, robust waste form, volume and toxicity reduction, favorable economics, in-container treatment, good public acceptance, isolated equipment, and instantaneous energy control. The results from the {open_quotes}cold{close_quotes} demonstration scale testing at the Rocky Flats nuclear weapons facility are described. Preliminary results for a transuranic (TRU) precipitation sludge indicate that volume reductions of over 80% are achievable over the current immobilization process. An economic evaluation performed demonstrated cost savings of $11.68 per pound compared to the immobilization process ...

1993-02-01

313

Micro and nano patterning by focused ion beam enhanced adhesion

Rhodopseudomonas viridis was grown in liquid culture at 30 degrees C anaerobically in light (generation time, 13 h) and under microaerophilic growth conditions in the dark (generation time, 24 h). The bacterium could be cloned at the same temperature anaerobically in light (1 week) and aerobically in the dark (3 to 4 weeks) if oxygen was limited to 0.1%. Oxygen could not be replaced by dimethyl sulfoxide, potassium nitrate, or sodium nitrite as a terminal electron acceptor. No growth was observed anaerobically in darkness or in the light when air was present. A variety of additional carbon sources were used to supplement the standard succinate medium, but enhanced stationary-phase cell density was observed only with glucose. Conditions for induction of the photosynthetic reaction center upon the change from microaerophilic to phototrophic growth conditions were investigated and optimized for a mutant functionally defective in phototrophic growth. R. viridis ...

1989-05-01

314

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

We report a new method of generating nano and micro patterns using focused ion beam (FIB) induced adhesion. The method utilizes selective irradiation of thin metallic films grown on substrates by focused ion beam followed by peel off. After peel off of the irradiated thin film it is observed that the ion beam scanned portions are retained on the substrate, creating nano and micro patterns. The method is suitable for materials of which the adhesion to the substrate can be improved by ion bombardment. The phenomenon has been demonstrated by creating gold nano patterns of different shapes and sizes ranging from 500 nm to 5 #mu#m on SiO_2-Si substrate using 10-30 keV Ga FIB at beam currents up to 10 pA. The mechanism involved in the process has been discussed. The technique could be utilized to prepare micro and nano patterns of thin films deposited on an appropriate substrate for optical, plasmonic and sensor related applications.

2009-05-01

315

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}

1999-03-01

316

Marine pastures: a by-product of large (100 megawatt or larger) floating ocean thermal power plants. Progress report, February 1, 1976--April 30, 1976

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.

1999-03-01

317

Magnetic properties of the Mn{sub 1-x}Fe{sub x}In{sub 2}S{sub 4} spinel compounds

Computer programs have been developed to define the temperature increase which would be needed to bring deep-ocean water into density equilibrium with surface water for locations where data are available. A series of continuous-flow studies on phytoplankton blooms resulting from mixtures of 80 percent deep and 20 percent surface water in 2000-liter concrete culturing vessels (''reactors'') has been completed. A quantitative determination of nutrient utilization and flow through a combined primary and secondary trophic level system has been completed. This study utilized the clam Tapes semidecussata, fed from phytoplankton grown in 80 percent deep and 20 percent surface water. An analysis of the fate of the deep water discharged from a floating OTEC plant indicates that horizontal containment of the resulting deep water: surface water mixture is necessary if conditions optimal for open-sea mariculture are to obtain. The design of ...

1976-01-01

318

Magnetic properties of Pr_2PdSi_3 single crystals

Mn{sub 1-x}Fe{sub x}In{sub 2}S{sub 4} spinel compounds (x=0.3, 0.8) were grown by the chemical vapor transport method. The analysis of the X-ray diffraction data suggest that both the compounds crystallize in a cubic structure under the space group Fd3m. The magnetic study done between 300 and 2 K showed a paramagnetic behavior for the intermediate concentration sample x=0.3. A good fitting to the Curie-Weiss law allows us to calculate the paramagnetic Curie temperature. They are negative indicating predominant antiferromagnetic interactions. However, in sample with high Fe concentration, x=0.8, it was possible to observe a peak at around T{sub sg} congruent with 10 K. From ac magnetic susceptibility data at different driving frequencies f, it is found that the peak at T{sub sg} shifts to lower temperatures with decreasing frequency suggesting an spin-glass behavior.

2004-04-28

319

Magnetic imaging of ion-irradiation patterned Co/Pt multilayers using complementary electron and photon probes

Ternary R_2TSi_3 intermetallic compounds (R=Rare Earth, T=Transition Metal) with hexagonal AlB_2-type crystallographic structure are known because of their interesting physical properties. Pr_2PdSi_3 single crystals were grown by a vertical floating zone method. The compound exhibits congruent melting behavior at a liquidus temperature of about 1770 C. Single crystalline samples show a huge anisotropy at low temperatures due to the crystal electric field effect and order antiferromagnetically below the Neel temperature T_N=2.17 K. This value approximately obeys the linear de Gennes scaling for this class of compounds. The [001] orientation was identified as the magnetic easy axis at room temperature. At lower temperature (#approx#20 K) magnetic easy and hard axes interchange with each other. Two additional magnetic phase transitions were observed at temperatures below 1 K.

2010-03-21

320

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials

The three-dimensional magnetic structure and reversal mechanism of patterned Co/Pt multilayers, were imaged using complementary Lorentz transmission electron microscopy (LTEM) (in-plane component) and magnetic transmission x-ray microscopy (M-TXM) (perpendicular magnetization). The Co/Pt films with perpendicular anisotropy were patterned by ion irradiation through a stencil mask to produce in-plane magnetization in the irradiated regions. The boundaries of the patterns, defined by the transition from out-of-plane to in-plane magnetization, were found to be determined by the stencil mask, whilst the scale of the magnetic reversal by the physical microstructure. The nucleation fields were substantially reduced to 50 Oe for the in-plane regions and 1 kOe for the perpendicular regions, comparing to 4.5 kOe for the as-grown film. The perpendicular reversals were found to always originate at the pattern boundaries.

2001-04-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

321

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation loop were observed from the time-evolutionary ...

2004-11-15

322

Isolation and Identification of Achromobacter sp. DN-06 and Evaluation of Its Pyridine Degradation Kinetics

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and dislocation loop were observed from the time-evolutionary study ...

2004-11-01

323

British Library Electronic Table of Contents (United Kingdom)

We report the isolation of a new bacterium species (named as DN-06) that degrades pyridine, a model compound containing both carbon and nitrogen, from the aerobic activated sludge in a coking wastewater treatment plant. DN-06 was identified as Achromobacter sp. using 16S rDNA sequence analysis. In batch culture, more than 95% of pyridine (500?mg/L) was degraded within 18?h by DN-06 grown at 35?C and pH?8 with agitation at 170?rpm. Degradation experiments of pyridine at different initial concentrations (50?4,300?mg/L) revealed that pyridine was an inhibitory substrate, and that neither yield coefficient Y nor endogenous decay coefficient K d was a constant. The values of Y and K d were 0.55?0.74 and 0.0032?0.0057?h?1, respectively. Five kinetic models (Haldane, Yano, Aiba, Webb, and Monod) ...

2011-01-01

324

Intense luminescence from porous ZnSe layers

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

We report on the possibility to prepare ZnSe porous layers with different degrees of porosity by means of electrochemical methods. The prepared porous structures were characterized using scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL) techniques. The PL of the as-grown material and porous layers measured at low temperatures (10 K) was found to be dominated by an emission band at 2.796 eV as well as a band at 2.700 eV with several phonon replicas. The analysis of the dependence of these bands upon the excitation power density and temperature suggests that free-to-bound and respectively donor-acceptor electron transitions are responsible for the emission bands involved. The comparison of SEM and CL images taken from the same porous regions demonstrated that cathodoluminescence intensity from layers with small characteristic sizes of the porous entities (around 50 nm) is weaker than that inherent in bulk material, while porous ...

325

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO{sub 2} layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide tunneling ...

2006-08-15

326

Indentation modulus and hardness in heteroepitaxial Al{sub x}Ga{sub 1{minus}x}P films

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide tunneling conduction ...

2006-08-01

327

Holistic RBS-PIXE data reanalysis of SBT thin film samples

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear interpolation.

1997-05-01

328

Histological changes in the ovaries of the females in three filial generations of spodoptera littoralis (boisd.) after being irradiated as full- grown Male pupae

The growth of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films on top of Pt electrode substrates is an important issue for the fabrication of ferroelectric based memories. In a recent publication, SBT thin films grown using seeded and unseeded procedures were studied by PIXE and RBS. Difficulties and misfits found in the comparison of results from both techniques were, at that time, overcome by physical considerations. These, although not rendering interpretation impossible, left out the possibility of understanding the exact nature of the differences between the interface behavior in each case. In the present work it is shown that the reanalysis of the same data using the recently developed RBS-PIXE simultaneous and self-consistent calculation present in NDF leads to stronger conclusions on the solid state reaction occurring during the deposition stage for both types of samples. Allowing for the occurrence of solid state reactions between the deposited film and the Pt ...

2007-08-15

329

High-efficiency solar cell and method for fabrication

the cotton leaf worm, Spodoptera littoralis (boisd.) were irradiated with 100,150 and 200 Gy to induce inherited sterility. the effects of the tested doses applied to these pupae through three consequent fillial generations and the retarded influence on their F_1,F_2 and F_3 generations progeny were examined . irradiation of parental male induced damage to their daughter females ovaries. the overioles of females among P_1 ,F_1 and F_2 generations showed that the follicular epithelial cells appeared abnormal beside their limited separation from developing oocytes which became shrinked, semi absorbed or completely absorbed leaving vacuoles. the nurse cells were reduced or absent in some parts. damage was obvious through the first and second generations especially at 150 and 200 Gy. in the third generation, ovaries were not greatly affected

2004-02-01

330

Growth of single-crystal metastable semiconducting (GaSb)_1/sub -//sub x/Ge/sub x/ films

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). ...

1999-08-31

331

Growth and characterisation of electrodeposited ZnO thin films

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole concentrations varying from ...

6180-01-01

332

Genetic engineering of group 2 sigma factor SigE widely activates expressions of sugar catabolic genes in Synechocystis species PCC 6803.

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of the ZnO films was ...

2008-04-30

333

Free-air CO{sub 2} enrichment (FACE) enhances biomass production in a short-rotation poplar plantation

Metabolic engineering of photosynthetic organisms is required for utilization of light energy and for reducing carbon emissions.Control of transcriptional regulators is a powerful approach for changing cellular dynamics, because a set of genes is concomitantly regulated. Here, we show that overexpression of a group 2 ? factor, SigE, enhances the expressions of sugar catabolic genes in the unicellular cyanobacterium, Synechocystis sp. PCC 6803. Transcriptome analysis revealed that genes for the oxidative pentose phosphate pathway and glycogen catabolism are induced by overproduction of SigE. Immunoblotting showed that protein levels of sugar catabolic enzymes, such as glucose-6-phosphate dehydrogenase, 6-phosphogluconate dehydrogenase, glycogen phosphorylase, and isoamylase, are increased. Glycogen levels are reduced in the SigE-overexpressing strain grown under light. Metabolome analysis revealed that metabolite levels of the TCA cycle and acetyl-CoA are ...

2011-07-11

334

Free-air CO_2 enrichment (FACE) enhances biomass production in a short-rotation poplar plantation

The possible contribution of short rotation cultures (SRC) to carbon sequestration in both current and elevated carbon dioxide concentrations was investigated using the free-air carbon dioxide enrichment (FACE) technique. Three poplar species were grown in an SRC plantation for three growing seasons. Above-ground and below-ground biomass increased by 15 to 27 per cent and by 22 to 38 per cent, respectively; light-efficiency also increased as a result. Depletion of inorganic nitrogen from the soil increased after three growing seasons at elevated carbon dioxide levels, but carbon dioxide showed no effect on stem wood density. Stem wood density also differed significantly from species to species. These results confirmed inter-specific differences in biomass production in poplar, and demonstrated that elevated carbon dioxide enhanced biomass productivity and light-use efficiency of a poplar short rotation cultivation ecosystem without changing biomass allocation. The ...

2003-08-01

335

Feasibility of creation of new markets for activated charcoal and its exploitation

The possible contribution of short rotation cultures (SRC) to carbon sequestration in both current and elevated carbon dioxide concentrations was investigated using the free-air carbon dioxide enrichment (FACE) technique. Three poplar species were grown in an SRC plantation for three growing seasons. Above-ground and below-ground biomass increased by 15 to 27 per cent and by 22 to 38 per cent, respectively; light-efficiency also increased as a result. Depletion of inorganic nitrogen from the soil increased after three growing seasons at elevated carbon dioxide levels, but carbon dioxide showed no effect on stem wood density. Stem wood density also differed significantly from species to species. These results confirmed inter-specific differences in biomass production in poplar, and demonstrated that elevated carbon dioxide enhanced biomass productivity and light-use efficiency of a poplar short rotation cultivation ecosystem without changing biomass allocation. The ...

2003-08-01

336

Fault detection by Turam TEM survey. Numerical model studies and a case history; TEM ho Turam sokutei haichi ni yoru danso kenshutsu no kokoromi. Model keisan to jisshirei

The size of the market for pulverized activated charcoal and particulate activated charcoal prepared by the Association of Inorganic Chemicals of Japan is 55,000t/y (1987) in total. Individually, some fields showed the expansion such as water purification, water treatment and gas treatment on the one hand, but on the other hand, several fields showed the decline such as sugar refining, dextrin sugar and soda glutamate. As a whole, the market showed no marked fluctuations or a very slight increase. Many of the above usages are traditional in the chemical industry and the food industry, etc., and the new usages developed in the past several years have not grown to influence the statistics as yet. Selection of raw material is the key for determining the character of activated charcoal. And the factors of determining the characteristic features are fine pore, surface area and surface activity (catalystic activity). Furthermore, the function requirement from the ...

1988-10-01

337

FIB implantation induced site-selectively grown self-assembled InAs QDs in a light emitting #mu#-diode

With an objective to detect faults estimated to exist along the Shigesumi valley in the Kamioka mine, discussions were given by using electromagnetic survey, which uses the Turam measurement arrangement based on the TEM method, and three-dimensional model calculations. The Turam measurement arrangement, which installs transmission loop fixedly, is used to identify nature and distribution of electrically conductive objects upon noticing abnormal portions in magnetic fields in the measurement data. In the model calculation, the plate model calculation method and the FDTD method were used, and so was the calculation code TEM3DL. The result revealed that strong topographical influence is seen from steep V-shaped valley existing along the traverse line in the measurement data, but an abnormal resistivity band accompanying remarkable distortion in the curve was detected. According to the result of the model calculation, anomaly detection may be found difficult in locations where a low ...

1997-05-27

338

Experimental attempt to produce mRNA transfected dendritic cells derived from enriched CD34+ blood progenitor cells

We present an approach for fabrication of intentionally positioned epitaxial InAs QDs in a micron sized light emitting diode. For site-selective growth, a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation technology in an all-ultra-high-vacuum (UHV) setup has been employed. Single dot occupancy of almost 55 % on FIB patterned nano-depressions was successfully achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding these QDs in the intrinsic part of a GaAs-based micron sized p-i-n junction device. Few or single dot are expected to be electrically addressed in these devices. We report results from electroluminescence (EL) measurement which proves the single dot characteristics of our device. The EL spectra consist of sharp emission lines and their dependence on injection current shows linear behavior for exciton and quadratic behavior for biexciton ...

2010-03-21

339

British Library Electronic Table of Contents (United Kingdom)

It Peripheral blood progenitor enriched CD34+ cells (PBPC) are rather often used as stem cell background in cancer patients following high dose therapy. Keeping in mind that precursor dendritic cells (DCs) originate from haematopoietic progenitor cells, purified CD34+ cells might also serve as starting cells for ex-vivo production of DC. The aim of the present study is to develop a clinical grade procedure for ex-vivo production of DC derived from enriched CD34+ cells. Various concentrations of CD34+ cells were grown in gas-permeable Teflon bags with different serum-free and serum-containing media supplemented with GM-CSF, IL-4, TNF-a, SCF, Flt-3L and INF-a. Serum-free CellGroSCGM medium for 7 days followed by CellGroDC medium in 7 days gave equal results as serum-containing medium. Follow...

2008-01-01

340

Excitonic transitions in InGaP/InAlGaP strained quantum wells

Electrical and structural properties of ion-implanted and post-annealed silicide films

Excitonic transitions in metalorganic vapor phase epitaxially grown In_xGa_1_-_xP/In_0_._4_8(Al_0_._7Ga_0_._3)_0_._5_2P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (#approx#0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550--650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of #DELTA#E_C#approx#0.75#DELTA#E_G.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

341

Electrical and structural properties of ion-implanted and post-annealed silicide films

The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to PdSi was also observed in the high-temperature annealing of the ...

1982-05-01

342

Effects of CdCl2 treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature annealing of the implanted Pd"2Si films. (author).

343

Effect of V-shaped defects on structural and optical properties of AlGaN/InGaN multiple quantum wells

The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl2/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, Eg, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl2/treatment at 400 C for 30 min respectively. A progressive sharpening of the absorption edge upon heat treatment particularly for the CdCl2/treated was observed. ...

2007-09-01

344

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface

We have investigated the correlation between V-shaped defect formation and the optical properties of AlGaN/(In)GaN multiple quantum wells (MQWs) grown under different growth conditions and then demonstrated the characteristics of fabricated ultraviolet (UV) light emitting diodes (LEDs). From the temperature-dependent photoluminescence (PL) measurement, the internal quantum efficiency for 300 K was obtained as 43.6% for a sample with a low density of V-defects in a MQW and 13.7% for a sample with a high density of V-defects. The carrier lifetime based on the time resolved PL measurement at room temperature was 0.32 ns for a sample with a high density of V-defects and 1.26 ns for a sample with a low density of V-defects. And we also found that the density of V-defects affected the external quantum efficiency and wall plug efficiency of the fabricated UV LEDs. (fast track communication)

2008-07-07

345

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.

2004-02-01

346

Development of high-efficiency GaAs solar cells on polycrystalline Ge substrates

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

2004-02-01

347

Development of GaInAsP for GaInAsP/Ge cascade solar cells

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on poly-Ge and to improve our previous best efficiency from 15.8{percent} for a 1-cm{sup ...

1996-01-01

348

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. A proposed structure for the GaInAsP/Ge cascade cell is also given.

1992-12-01

349

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si{sub 1-y}C {sub y} in silicon

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of approx 1nA and a transconductance of ...

2002-01-01

350

Cyclin-Dependent Kinase Inhibitor p16 and p21 Expression, and Cell Cycle Change in Human Lens Epithelial Cell Line SRA 01/04 following Contact Inhibition in Normal Culture

We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650-800 deg. C. This is achieved by incorporating a layer of epitaxially grown Si{sub 1-y}C {sub y} layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 x 10{sup 14} cm{sup -2} was performed followed by annealing at temperature ranges of 650-800 deg. C. Samples with the Si{sub 1-y}C {sub y} layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime.

2006-05-10

351

British Library Electronic Table of Contents (United Kingdom)

Abstract Purpose: To describe the pattern of expression of the cyclin-dependent kinase inhibitors (CDKIs) p16, p21 and p27, and the cell cycle in SRA 01/04 cells relative to contact inhibition. Methods: SRA 01/04 cells were grown to overconfluence under normal conditions. At various phases of the cell growth, cells were assayed by flow cytometry and Western blotting for the expression of CDKIs. Results: Expression of p16 was detected from early logarithmic growth to stationary phases, during which the number of cells in G0/G1 increased from 46 to 69%. Expression of p21 was detected only during the overgrowth phase, when 60% of the cells were in G0/G1. Expression of p27 was not observed in SRA 01/04 cells. Conclusions: p16 expression was likely mediated by G0/G1 arrest to induce contact inh...

2011-01-01

352

Conversion of a plasma enhanced chemical vapor deposited silicon-carbon-nitride thin film at ultra-low temperature by oxygen plasma

Comparison of maintenance energy expenditures and growth yields among several rumen bacteria grown on continuous culture.

In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical analysis by X-ray photoelectron spectroscopy is reported for both the as-deposited and oxidized film and ...

2008-01-30

353

Blending of nanoscale and microscale in uniform large-area sculptured thin-film architectures

Maintenance energy expenditures were mesured for five rumen bacteria, Selenomonas ruminantium, Butyrivibrio fibrisolvens, Bacteroides ruminicola, Megasphaera elsdenii, and Streptococcus bovis, by using a complex medium with glucose as the carbon source. Large differences (as high as 8.5-fold) in maintenance energy expenditures were seen among these bacteria. The suggestion is made that maintenance requirements could be a significant determinant of bacterial competition in the rumen. Theoretical maximum growth yields, calculated from double reciprocal plots of yield versus dilution rate, were compared to theoretical Y(ATP) values in order to estimate minimum molar adenosine 5'-triphosphate yields from glucose for each bacterium. Results showed that relative yield among the bacteria was growth rate dependent. At high dilution rates, both S. ruminantium and S. bovis produced lactate as their principal fermentation product. At lower dilution rates very little lactate was formed and growth ...

1979-03-01

354

Biosorption of Acid Red 274 (AR 274) on Enteromorpha prolifera in a batch system

The combination of large thickness ($>3$ $\\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the first time. The nanoscale and the microscale have thus been blended together in sculptured thin films with transverse architectures. SiO$_x$ ($x\\approx 2$) nanowires were grown by electron--beam evaporation onto silicon substrates both with and without photoresist lines (1--D arrays) and checkerboard (2--D arrays) patterns. Atomic self--shadowing due to oblique--angle deposition enables the nanowires to grow continuously, to change direction abruptly, and to maintain constant cross--sectional diameter. The selective growth of nanowire assemblies on the top surfaces of both 1--D and 2--D arrays can be understood and predicted using simple geometrical shadowing equations.

2003-01-01

355

Assessment of the role of oxygen and mitochondria in heat shock induction of radiation and thermal resistance in Saccharomyces cerevisiae

The biosorption of Acid Red 274 (AR 274) dye on Enteromorpha prolifera, a green algae grown on Mersin costs of the Mediterranean, Turkey, was studied as a function of initial pH, temperature, initial dye and biosorbent concentration. The experiments were conducted in a batch manner. The Langmuir and Freundlich isotherms were used for modelling the biosorption equilibrium. At optimum temperature 30 deg C and initial pH 2.0-3.0, the Langmuir isotherm fits best to the experimental equilibrium data with a maximum monolayer coverage of 244 mg/g. The equilibrium AR 274 concentration of the exit stream of a single batch was also obtained by using the experimental equilibrium curve and operating line graphically. The pseudosecond-order kinetic model and Weber-Morris model were applied to the experimental data and it was found that both the surface adsorption as well as intraparticle diffusion contribute to the actual adsorption process. The biosorption process follows a ...

2005-11-11

356

Assessment of energy potential from biomass in Louisiana. Final report

In response to a heat shock, the yeast Saccharomyces cerevisiae undergoes a large increase in its resistance to heat and, by the induction of its recombinational DNA repair capacity, a corresponding increase in resistance to radiation. Yeast which lack mitochondrial DNA, mitochondria-controlled protein synthetic apparatus, aerobic respiration, and electron transport (rho/sup 0/ strain) were used to assess the role of O/sub 2/, mitochondria, and oxidative processes controlled by mitochondria in the induction of these resistances. We have found that rho/sup 0/ yeast grown and heat shocked in either the presence or absence of O/sub 2/ are capable of developing both radiation and heat resistance. We conclude that neither the stress signal nor its cellular consequences of induced heat and radiation resistance are directly dependent on O/sub 2/, mitochondrial DNA, or mitochondria-controlled protein synthetic or oxidative processes.

1983-10-01

357

Application of DLTS method to investigation of deep defect centers in epitaxial layers of multicomponent A"I"I"I-B"V compounds

The objective of this project is to identify feasible Louisiana-grown biomass crops and residues, to combine these with technically and economically feasible conversion processes, and to provide integrated biomass energy production systems in Louisiana. Among the recommended integrated systems are: cotton gin trash and rice hull processing residues used for either direct combustion or methane or ethanol production. Steam generation via direct combustion is recommended. Hardwood chips are economically feasible despite considerable price and supply instability, while high sugar or starch content crops are easily converted to ethanol but limited by price. Possible breakthroughs in biomass production or in the hydrolysis of starch or cellulose substrates may decrease processing costs. Recommended areas for future study dealing with production include: (1) increase biomass availability and density; (2) increase harvesting, transportation and storage technologies; (3) ...

1983-12-01

358

Analysis of pesticides in dried hops by liquid chromatography-tandem mass spectrometry.

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)

359

An alliance between university scientists, teachers and industry with an initial focus on biotechnology

An analytical method was developed for the determination of eleven agrochemicals [abamectin (as B1a), bifenazate, bifenthrin, carfentrazone-ethyl, cymoxanil, hexythiazox, imidacloprid, mefenoxam, pymetrozine, quinoxyfen, and trifloxystrobin] in dried hops. The method utilized polymeric and NH2 solid phase extraction (SPE) column cleanups and liquid chromatography with mass spectrometry (LC-MS/MS). Method validation and concurrent recoveries from untreated dried hops ranged from 71 to 126% for all compounds over three levels of fortification (0.10, 1.0, and 10.0 ppm). Commercially grown hop samples collected from several field sites had detectable residues of bifenazate, bifenthrin, hexythiazox, and quinoxyfen. The control sample used was free of contamination below the 0.050 ppm level for all agrochemicals of interest. The limit of quantitation and limit of detection for all compounds were 0.10 and 0.050 ppm, respectively. PMID:18593182

2008-07-02

360

Amelioration of alkali soil using flue gas desulfurization byproducts: productivity and environmental quality.

A collaboration initiated in 1989 between Judy Lachvayder and Chris Cullis in response to an application for a Christa McCauliffe Fellowship has grown into a substantial program. A one week course in biotechnology, using the Cold Spring Harbor Vector van, was run in 1990. A similar one week summer course was run by Cullis for high school freshmen and sophomores. Both programs (teachers and students) have continued with support from the Edison Biotechnology Center (EBTC), U.S. Biochemical, the Howard Hughes Medical Institute and CWRU. A core of teachers from these courses were brought together by the EBTC and the Cleveland Regional Area of Biologists (CRABS) was formed. This group holds regular meetings and develops new classroom exercises. A group of master teachers from the participants have also held their own workshops at local and national meetings. A Science and Society Symposium was held in February 1994 and an equipment loan program for teachers has been ...

1994-12-31

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361

A new method for quantifiable and controlled dosage of particulate matter for in vitro studies: the electrostatic particulate dosage and exposure system (EPDExS).

In this study, flue gas desulfurization (FGD) byproducts are used to ameliorate alkali soil. The average application rates for soils with low exchangeable sodium percentage (ESP), mid ESP, and high ESP are 20.9, 30.6, and 59.3 Mg ha(-1), respectively. The experimental results obtained for 3 consecutive years reveal that the emergence ratios and yields of the crops were 1.1-7.6 times and 1.1-13.9 times those of the untreated control, respectively. The concentrations of Cr, Pb, Cd, As, and Hg in the treated soils are far below the background values stipulated by the Environmental Quality Standard for Soils (GB15618-1995). Their concentrations in the seeds of corn and alfalfa grown in the treated soils are far below the tolerance limits regulated by National Food Standards of China. The results of this research demonstrate that the amelioration of alkali soils using FGD byproducts is promising. PMID:17412469

2007-04-06

362

A discussion of the development of sandy land from the viewpoint of ecology

An exposure chamber is described for the quantifiable addition of fine and ultrafine aerosol particulate matter directly to cells and used to demonstrate the in vitro cytotoxicity of fine 1,4-naphthoquinone particles to murine lung epithelial cells. The electrostatic particulate dosage and exposure system (EPDExS) operates on the principle of electrostatic precipitation and is shown to deposit fine and ultrafine aerosol particles directly to cells with 100% efficiency for particle diameters in the range of 40-530nm. This range is not limited by the EPDExS, but rather by the aerosolization method used for this study. Numbers of particles deposited onto the cells are counted with a condensation particle counter, negating any need to calculate or estimate particle exposure. The process of particle introduction, assessed using Trypan blue dye exclusion, had no effect on cell viability. In combination with a differential mobility classifier, the EPDExS can deliver select particle diameters ...

2008-06-08

363

Comparison on the growth of oxide films formed in alloy 800 and alloy 600 in an aqueous medium at high temperature

This article discusses the proper use of sandy land in China from the viewpoint of ecology. The many low-yield fields in every locality across China include sandy land that is unsuited to the cultivation of grains such as paddy rice, corn and wheat. Separate investigations of the northern plain and the southern coast between 1980 and 1982 demonstrated that sandy land in a warm climatic zone (e.g. Huang He) is suited to peanuts, soybeans and other oil-bearing crops; that forestation can be carried out on sandy land in Inner Mongolia and Xinjiang; and that coastal sandy land has much salinity and is best suited to growing horsetail beefwood. Moreover, the creation of windbreaks along the coasts of southern China has lessened the threat of wind-blown sand which had made rice not worth cultivating on sandy land. It is concluded that different crops can be grown on the sandy soil of China's temperate, warm, semitropical and tropical zones.

1983-01-01

364

["3H]Indole-3-acetyl-myo-inositol hydrolysis by extracts of Zea mays L. vegetative tissue

Alloy 800 and Alloy 600 are well known for their resistance to corrosion in an aqueous medium at high pressure and temperature, for which they have been widely used for more than 3 decades in different structural components of water refrigerated nuclear reactors, especially as material for the steam generator tubes (SG) in these nuclear plants. The SG tubes in the Atucha I and Embalse Nuclear Plants are made with Alloy 800. The speed of corrosion of these materials in a reactor's refrigerant medium, while very small is perfectly measurable and can be described by parabolic or logarithmic type kinetics. In other words this speed is high in the first states of growth during the formation of a protective oxide film but then drops to almost stationary values. One characteristic of these films is the formation of a double layer (or duplex): i) an internal adhering layer, of approximately constant thickness, formed by small microcrystals (#<=#0.05 mm), ii) a less adhering external one, ...

2006-12-01

365

Water diffusion profile measurements in epoxy using neutron radiography

["3H]Indole-3-acetyl-myo-inositol was hydrolyzed by buffered extracts of acetone powders prepared from 4 day shoots of dark grown Zea mays L. seedlings. The hydrolytic activity was proportional to the amount of extract added and was linear for up to 6 hours at 37"0C. Boiled or alcohol denatured extracts were inactive. Analysis of reaction mixtures by high performance liquid chromatography demonstrated that not all isomers of indole-3-acetyl-myo-inositol were hydrolyzed at the same rate. Buffered extracts of acetone powders were prepared from coleoptiles and mesocotyls. The rates of hydrolysis observed with coleoptile extracts were greater than those observed with mesocotyl extracts. Active extracts also catalyzed the hydrolysis of esterase substrates such as #alpha#-naphthyl acetate and the methyl esters of indoleacetic acid and naphthyleneacetic acid. Attempts to purify the indole-3-acetyl-myo-inositol hydrolyzing activity by chromatographic procedures resulted in ...

366

Visible (657 nm) InGaP/InAlGaP strained quantum well vertical-cavity surface-emitting laser

The diffusion characteristics of water in polymer materials have been studied for a few decades. Several methods have been developed to provide water diffusion characteristics as a function of time, temperature, pressure, or thickness of polymer. Unfortunately, most of these methods give the amount of water absorbed as a function of weight versus time at given environmental conditions. Concentration profiles of the water diffusion through the polymer have been unobtainable by these established methods. Neutron radiography is a method of non-destructive testing that has grown rapidly over the past ten years and is capable of giving these concentration profiles. Epoxy is one of the most commonly used polymers for which water diffusion information is important. In the automotive industry, epoxy is used both as a sealant and a bonder to prevent water from getting inside structures and causing corrosion. To prevent this corrosion, it is important to know the diffusion ...

367

Utilization of recently immobilized fertilizer nitrogen by wheat as influenced by some organic chemicals in a rice-wheat sequence

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber communication.

1992-04-13

368

Transfer factors of Polonium from soil to parsley and mint

The effectiveness of two organic chemicals, viz. 2, 4-dinitrophenyl hydrazone and naphthyl ethylene diamine applied at the rate of 10 mg kg"-"1 soil to wheat were studied as mobilizers of recently immobilized fertilizer N applied ("1"5N urea) at the rate of 60, 120 and 180 mg kg"-"1 soil to rice under greenhouse condition on a Typic Ustochrept. Rice as a first crop gave "1"5N recovery ranging from 35 to 37 per cent and more than one third of the applied fertilizer N was retained in the soil. Chemicals provided significantly higher mineral N during the initial growth period of wheat grown as a subsequent crop on the soil having different levels of residual nitrogen. "1'5N removal by plants at all the growth stages was significantly higher due to chemicals. The chemicals also showed significant effect in increasing the grain yield which caused higher N uptake and showed "1"5N recovery escalation. The "1"5N recovery at wheat harvest varied from 3 to 5 per cent of ...

369

Thermal annealing effect on optical properties of electrodeposited ZnO thin films

Transfer factors of "2"1"0Po from soil to parsley and mint have been determined. Artificial polonium isotope ("2"0"8Po) was used as a tracer to determine transfer factor of Po from soil to plant in pot experiments. Two plant growing systems were used for this study namely, an outdoor system and a sheltered system by a polyethylene tent. "2"0"8Po and "2"1"0Po were determined in soil and different parts of the studied plants (stem and leaf), using alpha spectroscopy. The results have shown that there was a clear uptake of "2"0"8Po by roots to leaves and stems of both plants. Higher values of transfer factors using the "2"1"0Po activity concentrations than the "2"0"8Po activity concentration were observed. Transfer factors of "2"1"0Po from soil to parsley varied between 20 x 10"-"2 and 50 x 10"-"2 and 22 x 10"-"3 and 67 x 10"-"3 in mint, while "2"0"8Po transfer factors varied between 4 x 10"-"2 and 12 x 10"-"2 for parsley and 10 x 10"-"2 and 22 x 10"-"2 in mint. Transfer factors of Po ...

2010-12-01

370

The rate-limiting mechanism of transition metal gettering in multicrystalline silicon

ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band after annealing at 200 {sup 0}C. A visible region emission band at 580 nm, ascribed to ...

2008-10-07

371

The mechanism of metal nanoparticle formation in plants: limits on accumulation

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of this research is to ...

1997-04-01

372

The effect of elevated carbon dioxide on a Sierra-Nevadan dominant species: Pinus ponderosa

Metal nanoparticles have many potential technological applications. Biological routes to the synthesis of these particles have been proposed including production by vascular plants, known as phytoextraction. While many studies have looked at metal uptake by plants, particularly with regard to phytoremediation and hyperaccumulation, few have distinguished between metal deposition and metal salt accumulation. This work describes the uptake of AgNO{sub 3}, Na{sub 3}Ag(S{sub 2}O{sub 3}){sub 2}, and Ag(NH{sub 3}){sub 2}NO{sub 3} solutions by hydroponically grown Brassica juncea and the quantitative measurement of the conversion of these salts to silver metal nanoparticles. Using X-ray absorption near edge spectroscopy (XANES) to determine the metal speciation within the plants, combined with atomic absorption spectroscopy (AAS) for total Ag, the quantity of reduction of Ag{sup I} to Ag{sup 0} is reported. Transmission electron microscopy (TEM) showed Ag particles of ...

2009-08-15

373

Surgical adjuvant therapy in colon carcinoma: a human tumor spheroid model for evaluating radiation sensitizing agents

The impact of increasing atmospheric C0{sub 2} has not been fully evaluated on western coniferous forest species. Two year old seedlings of Pinusponderosa were grown in environmentally controlled chambers under increased C0{sub 2} conditions for 6 months. These trees exhibit morphological, physiological, and biochemical alterations when compared to our controls. Analysis of whole plant biomass distribution has shown no significant effect to the root to shoot ratios, however needles subjected to elevated C0{sub 2} exhibited an increased overall specific needle mass and a decreased total needle area. Morphological changes at the needle level included decreased mesophyll to vascular tissue 91 ratio and variations in starch storage in chloroplasts. The elevated CO{sub 2} increased internal CO{sub 2} concentrations and assimilation of carbon. Biochemical assays revealed that ribulose-bisphosphate carboxylase specific activities increased on per unit area basis with ...

1995-01-01

374

Study of ytterbium doping effects on structural, mechanical and opto-thermal properties of sprayed ZnO thin films using the Boubaker Polynomials Expansion Scheme (BPES)

HT-29 human colon tumor cells growing as spheroids have been evaluated as a model system for measuring the response of human colon tumor cell to antineoplastic agents. HT-29 cells have been capacity to form spheroids up to 1 mm or more in diameter when grown in spinner culture. The multicellular HT-29 spheroids develop hypoxic centers reflecting the cellular conditions found in human cancer treatment, i.e., nutritionally deficient hypoxic cells that are felt to be a significant source of both radiation and chemotherapy clinical treatment failures. Spheroids of increasing size were radiated and then dispersed into single cells for colony survival assay. Compared with irradiated single cell suspensions, the spheroid cells demonstrated a significant increase in radioresistance. Growing spheroids developed a complex radiation survival curve which was variable with respect to size of the spheroid. The drug 5-Fu was studied to examine in a preliminary fashion its ...

375

Study of ytterbium doping effects on structural, mechanical and opto-thermal properties of sprayed ZnO thin films using the Boubaker Polynomials Expansion Scheme (BPES)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(lambda) and reflectance R(lambda) spectra. Conjoint optical and thermal properties ...

2009-10-19

376

Soil to plant transfer of "2"3"8U, "2"2"6Ra and "2"3"2Th on a uranium mining-impacted soil from southeastern China

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C3H8O), water (H2O) and zinc acetate (Zn(CH3CO2)2) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(?) and reflectance R(?) spectra. Conjoint optical and thermal properties were deduced from the optical measurements in ...

2009-10-19

377

Single crystal growth of lithium ion conductive phosphates

Both soil and plant samples of nine different plant species grown in soils from southeastern China contaminated with uranium mine tailings were analyzed for the plant uptake and translocation of "2"3"8U, "2"2"6Ra and "2"3"2Th. Substantial differences were observed in the soil-plant transfer factor (TF) among these radionuclides and plant species. Lupine (Lupinus albus) exhibited the highest uptake of "2"3"8U (TF value of 3.7x10"-"2), while Chinese mustard (Brassica chinensis) had the least (0.5x10"-"2). However, in the case of "2"2"6Ra and "2"3"2Th, the highest TFs were observed for white clover (Trifolium pratense) (3.4x10"-"2) and ryegrass (Lolium perenne) (2.1x10"-"3), respectively. "2"3"2Th in the tailings/soil mixture was less available for plant uptake than "2"2"6Ra or "2"3"8U, and this was especially evident for Chinese mustard and corn (Zea mays). The root/shoot (R/S) ratios obtained for different plants and radionuclides shown that Indian mustard had the ...

1000-01-01

378

Short-wavelength (approx. <6400 A) room-temperature continuous operation of p-n In/sub 0. 5/(Al/sub x/Ga/sub 1//sub -//sub x/)/sub 0. 5/P quantum well lasers

Single crystals of Li{sub 1.8}(In{sub 0.55}Zr{sub 0.45}){sub 2}(PO{sub 4}){sub 3} and Li{sub 3}(In{sub 1-x}Sc{sub x}){sub 2}(PO{sub 4}){sub 3} (x=0.67,0.73) were grown by a flux method. The crystal structure of Li{sub 1.8}(In{sub 0.55}Zr{sub 0.45}){sub 2}(PO{sub 4}){sub 3} was found to be similar to that of the high temperature {gamma}-phase of Li{sub 3}Sc{sub 2}(PO{sub 4}){sub 3}. However, Li ions were located on only one site among three available sites. On the other hand, those of Li{sub 3}In{sub 2}(PO{sub 4}){sub 3}-Li{sub 3}Sc{sub 2}(PO{sub 4}){sub 3} solid solutions were found to be similar to that of the low temperature {alpha}-phase of Li{sub 3}Sc{sub 2}(PO{sub 4}){sub 3}. The ionic conductivity of Li{sub 1.8}(In{sub 0.55}Sc{sub 0.45}){sub 2}(PO{sub 4}){sub 3} was measured along with the directions perpendicular and parallel to the a-axis. A relatively large anisotropic conductivity was observed in the single crystal. (orig.)

2000-07-01

379

Shallow Si/Pd-based ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P

Data are presented demonstrating short-wavelength (approx. <6400 A) continuous (cw) laser operation of p-n diode In/sub 0.5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0.5/P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30 /sup 0/C to room temperature (RTapprox. =300 K, lambdaapprox. =6395 A) the threshold current density changes from 2.3 x 10/sup 3/ A/cm/sup 2/ (-30 /sup 0/C) to 3.7 x 10/sup 3/ A/cm/sup 2/ (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7 x 10/sup 3/ W/cm/sup 2/, J/sub eq/approx.2.9 x 10/sup 3/ A/cm/sup 2/) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

1988-11-07

380

Semi-solid twin-roll casting process of magnesium alloy sheets

Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of {approximately} 6 {times} 10{sup {minus}6} {Omega}-cm{sup 2} and {approximately} 1 {times} 10{sup {minus}5} {Omega}-cm{sup 2} have been obtained on Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P respectively (both doped to {approximately} 2 {times} 10{sup 18} cm{sup {minus}3}). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al{sub 0.5}In{sub 0.5}P and n-Ga{sub 0.5}In{sub 0.5}P are presented.

1996-12-31

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381

Self-interstitial diffusion and clustering with impurities in crystalline silicon

An experimental approach has been performed to ascertain the effectiveness of semi-solid strip casting using a horizontal twin roll caster. The demand for light-weight products with high strength has grown recently due to the rapid development of automobile and aircraft technology. One key to such development has been utilization of magnesium alloys, which can potentially reduce the total product weight. However, the problems of utilizing magnesium alloys are still mainly related to high manufacturing cost. One of the solutions to this problem is to develop magnesium casting-rolling technology in order to produce magnesium sheet products at competitive cost for commercial applications. In this experiment, magnesium alloy AZ31B was used to ascertain the effectiveness of semi-solid roll strip casting for producing magnesium alloy sheets. The temperature of the molten magnesium, and the roll speeds of the upper and lower rolls, (which could be changed independently), ...

2004-06-10

382

Seismic stratigraphy and salt tectonics of upper Continental Slope, East Breaks flexure trend, Gulf of Mexico

In this work the diffusion of ion-beam-injected self-interstitials (Is) and their interaction with impurities in crystalline Si are presented. In particular, the I penetration into a molecular beam epitaxy grown Si structure was studied by means of diffusion effects induced on B spikes, analyzed by a developed simulation code. Trapping effects at sample-surface and bulk are evidenced and modeled. The B marker approach was extended to the two-dimensional (2D) I-diffusion occurring as a consequence of ion implantation through a sub-micron dimension patterned oxide mask. I-source size effects on the I penetration have been found and modeled, quantitatively describing the 2D I-diffusion. The I-substitutional carbon interactions have been also studied, showing the C ability to effectively retain Is. The I-trapping mechanism was quantitatively studied by the simulation code, showing that one I is able to deactivate about two C traps by means of I-trapping and ...

2004-02-01

383

Role of mitochondria in sulfolipid biosynthesis by Euglena chloroplasts

A study of more than 1200 of 72-fold, migrated, seismic reflection profiles, from the eastern part of the East Breaks flexure trend, Gulf of Mexico, indicates that, although individual seismic reflectors cannot be traced across the entire area, seismic depositional units can be recognized and correlated from basin to basin in most instances. Three tentative conclusions are evident from this study: (1) salt diapirs appear to have grown through a series of intermittent movements to form structurally separate intraslope basins; (2) sedimentation is probably channeled by differential dome growth, which creates local stratigraphic differences between basins; and (3) packages of distinctive seismic depositional units can be successfully used to map sediment cycles between separate basins. Fluctuations of Pleistocene sea level appears to be the dominate depositional control on the upper continental slope in this area. During high sea level stands, turbidity currents were ...

1986-05-01

384

Rare-earth mixed oxide thin films as 100% lattice match buffer layers for YBa2Cu3O7-x coated conductors

Sulfate activation occurs in Euglena mitochondria the authors now find that the sulfate activating enzymes are absent from Euglena chloroplasts. Cells of mutant W/sub 10/BSmL lacking plastids also lack detectable sulfolipid (SL) when grown on /sup 35/SO/sub 4//sup 2 -/ indicating that SL is absent from the mitochondria and is exclusively in the plastids. Plastids alone will convert /sup 35/S-cysteine to /sup 35/SL in the presence of ATP and Mg/sup 2 +/; light is stimulatory. Under similar conditions, chloroplasts and mitochondria incubated together convert /sup 35/SO/sub 4//sup 2 -/ to plastid-localized /sup 35/SL but either organelle incubated alone fails to effect this conversion. Unlabeled cysteine blocks SL labeling from sulfate in the mixed incubation; since cysteine is formed from sulfate by Euglena mitochrondria, cysteine (and other compounds) may move from the mitochondrion to the chloroplast to provide the sulfo group for SL formation. Although ...

1987-04-01

385

Production of Shiga-like toxins by Escherichia coli O157:H7 can be influenced by the neuroendocrine hormone norepinephrine.

Buffer layers with 100% lattice match with YBa2Cu3O7 - ? (YBCO) were prepared from mixed rare-earth-oxides applying a simple sol-gel process and dip-coating method. Structural analysis of the sol-gel derived powder by X-ray diffraction revealed that the mixing parameter, which eliminates the lattice mismatch with YBCO, is x = 0.2382, 0.1852, 0.1252, 0.0906, 0.0793 and 0.0395 in (Eu1 - xHox)2O3, (Eu1 - xErx)2O3, (Eu1 - xYbx)2O3, (Gd1 - xHox)2O3, (Gd1 - xYx)2O3 and (Gd1 - xYbx)2O3, respectively. Microstructural investigations were carried out for Gd1.819Ho0.181O3 films epitaxially grown on cube-textured Ni (100) substrates by sol-gel dip-coating process. X-ray diffraction of the buffer showed strong out-of-plane orientation on Ni tape. The (Gd1 - xHox)2O3 (222) pole figure indicated a single cube-on-cube textured structure. The omega and phi scans revealed good out-of-plane and in-plane alne alignments. The full-width at half-maximum values of omega and phi scan of ...

2010-04-02

386

Point-contact Andreev-reflection spectroscopy in MgB{sub 2}: The role of substitutions

To examine whether the neuroendocrine hormone norepinephrine may influence the production of the Shiga-like toxins (SLTs), several Escherichia coli O157:H7 clinical isolates were grown in the presence or absence of norepinephrine. An in vitro culture system consisting of low (<1500 colony-forming units/ml) initial concentrations of inocula into a serum-based medium was used to more closely approximate in vivo conditions. The growth of all isolates was increased several logs in the presence of norepinephrine, as compared with the growth in controls, during a 24-hour growth period. Controls included additional dextrose as well as the use of the norepinephrine metabolite normetanephrine, which contains one more methyl group than norepinephrine and hence would serve as a better energy source for growth if the effect were solely nutritionally mediated. During the 24 hours of growth, the production of cell-associated SLT-I on a protein-equivalent basis was shown to be ...

1996-10-01

387

Optically stimulated luminescence and thermoluminescence in CVD diamond and dosimetric evaluation in fields of ionizing radiation; Luminiscencia opticamente estimulada y termoluminiscencia en diamante DQV y evaluacion dosimetrica en campos de radiacion ionizante

We summarize the results of point-contact Andreev-reflection (PCAR) spectroscopy in MgB{sub 2} doped by chemical substitutions, either magnetic (Mn) or non-magnetic (Al,C), obtained by us and by other groups in the last four years. Despite the variety of samples used (crystals and polycrystals of various origin) and some minor differences in the experimental techniques, these measurements have directly provided a complete and consistent picture of the effects of chemical substitutions on the gaps of MgB{sub 2} shedding light on other relevant parameters (scattering rates, DOSs) affected by doping. In Al-doped crystals and polycrystals, the gap amplitudes {delta}{sub {sigma}} and {delta}{sub {pi}} - obtained through a two-band Blonder-Tinkham-Klapwijk (BTK) fit of the Andreev-reflection conductance curves - decrease on increasing the Al content x (i.e. on decreasing the critical temperature of the contacts T{sub c}{sup A}), but remain clearly distinct with no evidence of gap merging ...

2007-06-01

388

Open top chamber experiment ``Edelmannshof``: carbohydrate and energy metabolism in needles and trunks from Norway spruce fumigated with unfiltered or charcoal-filtered air in comparison with untreated trees

The optically stimulated luminescence (OSL) results a highly appropriate dosimetric technique for readings of absorbed radiation 'in alive' and 'in situ', as well as in real time. The CVD diamond on the other hand presents excellent qualities like radiation reader thanks to its reproducibility, radiation resistance, biocompatibility and non toxicity. The present work studies the answer of two diamond films pure and polluted with nitrogen (750 ppm) grown by the Chemical Vapor Deposition method (CVD) on silicon substrate (001) irradiated with beta (Sr-90) in the 0.833-100 Gy interval. The optical stimulation was carried out by 40 seconds with infrared laser (830 nm, 0.36 W/cm{sup 2}) and the filter BG-39 (300-600 nm) coupled the PM. The intensity and the decay of the hyperbolic type of the LOE curves were similar in both samples, for the non doped diamond were observed trapping states in 200-380 C being compared with those that it ...

2006-07-01

389

Oleuropein aglycon prevents cytotoxic amyloid aggregation of human amylin.

As part of a five-year-lasting open-top-chamber experiment at the `Edelmannshof` site (Welzheimer Wald) we analyzed Norway spruce trees (Picea abies (L.) Karst.) with regard to carbohydrate and energy (ATP/ADP ratio) metabolism. End products, intermediates, and a regulator of carbon allocation (starch, sucrose, hexoses, fructose-2,6-bisphosphate) as well as enzyme activities involved in sucrose metabolism (sucrose-P synthase, sucrose synthase, acid invertase) were determined in needle and trunk samples of the different treatments (charcoal-filtered, unfiltered, ambient air). Changes of these parameters were documented annually and with regard to needle development (up to 2 years after bud break), and diurnally during an ozone period in midsummer. Samples from trees grown in an unfiltered atmosphere showed relatively high sucrose and hexose contents of the needles. The capacities of sucrose-P synthase (increased; sucrose synthesis) and acid invertase (decreased; ...

1997-12-01

390

New materials for future generations of III-V solar cells

Pancreatic amyloid deposits of amylin are a hallmark of Type II diabetes and considerable evidence indicates that amylin oligomers are cytotoxic to beta-cells. Many efforts are presently spent to find out naturally occurring molecules, or to design synthetic ones, able to hinder amylin aggregation or to protect cells against aggregate cytotoxicity. In this context, a protective effect of some polyphenols against amyloid cytotoxicity was reported. Actually dietary polyphenols are endowed with multiple health benefits, and extra virgin olive oil is attracting increasing interest as a source of these substances. Here, we investigated the effects on amylin aggregation and cytotoxicity of the secoiridoid oleuropein aglycon, the main phenolic component of extra virgin olive oil. We found that oleuropein, when present during the aggregation of amylin, consistently prevented its cytotoxicity to RIN-5F pancreatic beta-cells, as determined by the 3-[4,5-dimethylthiazol-2-yl]-2,5-diphenyl ...

2009-07-18

391

Microstructural evolution of single crystalline Al{sub 2}O{sub 3} irradiated with single and triple ion beams

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have demonstrated a depletion-width-enhanced variation of one of the ...

1999-03-01

392

Microstructural evolution of single crystalline Al_2O_3 irradiated with single and triple ion beams

The radiation-induced microstructural changes have been studied by cross-sectional transmission electron microscopy for single-crystal {alpha}-Al{sub 2}O{sub 3} samples irradiated with triple ion beams (0.25 MeV H{sup +}, 0.6 MeV He{sup +} and 2.4 MeV O{sup 2+}; `Triple (A)`), (0.33 MeV H{sup +}, 0.45 MeV He{sup +} and 1.3 MeV O{sup +}; `Triple (B)`) and three consecutive single ion beams (0.3 MeV H{sup +} ion followed by 0.6 MeV He{sup +} and then 0.8 MeV O{sup +} ions) at 650 C to doses in the range 0.1-8.4 dpa at the damage peak. In the specimen irradiated with Triple (A), having the same average projected range to a total peak dose of 3.7 dpa, cavities with an average diameter of 13 nm were formed between 1.2 and 1.75 {mu}m in depth causing a swelling of 0.1% at the peak, which is larger than those of the specimens irradiated with other conditions. The extent of the cavity-introduced region is some 40% smaller than observed in the damage region due to the He{sup +} and the O{sup +} ...

1996-10-01

393

Luminescence Properties of ScPO{sub 4} Single Crystals

The radiation-induced microstructural changes have been studied by cross-sectional transmission electron microscopy for single-crystal #alpha#-Al_2O_3 samples irradiated with triple ion beams (0.25 MeV H"+, 0.6 MeV He"+ and 2.4 MeV O"2"+; 'Triple (A)'), (0.33 MeV H"+, 0.45 MeV He"+ and 1.3 MeV O"+; 'Triple (B)') and three consecutive single ion beams (0.3 MeV H"+ ion followed by 0.6 MeV He"+ and then 0.8 MeV O"+ ions) at 650 C to doses in the range 0.1-8.4 dpa at the damage peak. In the specimen irradiated with Triple (A), having the same average projected range to a total peak dose of 3.7 dpa, cavities with an average diameter of 13 nm were formed between 1.2 and 1.75 #mu#m in depth causing a swelling of 0.1% at the peak, which is larger than those of the specimens irradiated with other conditions. The extent of the cavity-introduced region is some 40% smaller than observed in the damage region due to the He"+ and the O"+ ions and due to the H"+ ions in the sample irradiated with ...

394

Kinetics of Pd/sub 2/Si layer growth measured by an x-ray diffraction technique

Flux-grown ScPO{sub 4} single crystals exhibit a number of luminescence bands in their x-ray-excited luminescence spectra - including sharp lines arising from rare-earth elements plus a number of broad bands at 5.6 cV, 4.4 eV, and 3 eV. The band at 5.6 eV was attributed to a self-trapped exciton (STE) [l], and it could be excited at 7 eV and higher energies. This luminescence is strongly polarized (P = 70 %) along the optical axes of the crystal and exhibits a kinetic decay time constant that varies from several ns at room temperature to {approximately}10 {micro}s at 60 K and up to {approximately}1 ms at 10 K. It is assumed that the STE is localized on the SC ions. The band at 3 eV can be excited in the range of the ScPO{sub 4} crystal transparency (decay time = 3 to 4 {micro}s.) This band is attributed to a lead impurity that creates different luminescence centers. At high temperatures, the band at 4.4 eV is dominant in the x-ray-excited TSL and afterglow spectra. ...

1999-08-16

395

Interaction between high levels of applied heavy metals and indigenous soil manganese

An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd/sub 2/Si layers. Epitaxial Pd/sub 2/Si films were grown on Si(111) substrates over a temperature range of 160-222/sup 0/C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy E/sub a/ = 1.06 eV and prefactor k/sub 0/ = 7 x 10/sup -4/ cm/sup 2//s. The low value of E/sub a/ suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were detected at the Pd/sub ...

1986-05-15

396

Influence of the deposition techniques on the quality of the epitaxial buffer layers on textured Ni substrates

The importance of indigenous soil Mn level on plant Mn uptake from metal salt or sewage sludge amended soils was investigated. Twelve soil materials, six surface and six subsurface, were amended with either varying rates of a composite of Cd, Cu, Ni, and Zn sulfate salts, equivalent to the total of these metals present in a digested sewage sludge (Washington, DC) at rates of 0 to 896 dry metric tons/ha or with the sludge itself, at 224 dry metric tons/ha. Corn (Zea mays L.) was grown in the greenhouse for 30 days, 1 year after amendment application. Two pH levels of about 5.5 and 6.5 were maintained during the experiment on the metal salt amended soil materials. Plant tissue Mn levels increased with the application of Cd, Cu, Ni, and Zn (in combination) as metal salts or as sewage sludge over the range of soil materials used. The amount of increase with a given increase in applied metals was greater for the unlimed than for the limed metal salt treatments. Elevated ...

1981-01-01

397

High-temperature ferromagnetism in laser-deposited layers of silicon and germanium doped with manganese or iron impurities

In order to fabricate high temperature superconducting tapes for power applications, the authors have analyzed different buffer layer architectures grown on textured Ni substrates suitable for YBCO deposition. Due to its optimal lattice matching the studied structures present as top layer a CeO{sub 2} film. The deposition of CeO{sub 2} on Ni substrates was performed by pulsed laser ablation and by e-beam evaporation at different temperatures. The films obtained by the two deposition techniques have not optimal structural properties, having a polycrystalline component. The misorientation of CeO{sub 2} is probably due to the formation of NiO at the interface between the film and the substrate during the deposition process even if no oxygen is introduced. In order to prevent Ni oxidation an intermediate 2000 {angstrom} Pd thick film was deposited by e-beam. Furthermore, the lattice mismatch between Pd and CeO{sub 2} is smaller than that between Ni and CeO{sub 2}. The ...

1999-04-20

398

High-power (1. 4 W) AlGaInP graded-index separate confinement heterostructure visible (lambdaapprox. 658 nm) laser

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, Si-based ferromagnetic ...

2009-04-15

399

Growth characteristics of ZrO_2 insulation coatings on Ag/AgMg sheathed Bi-2212 superconducting tapes

Pulsed operation of an AlGaInP graded-index separate confinement heterostructure laser grown by organometallic vapor phase epitaxy is reported. The laser active region consists of a single 100 A Ga/sub 0.5/In/sub 0.5/P quantum well and 1600 A graded index regions on both sides of the well. The graded index regions were produced by lattice-matched graded composition (Al/sub y/Ga/sub 1-//sub y/)/sub 0.5/In/sub 0.5/P quaternary alloys. This structure reduces the broad-area threshold current compared to a double heterostructure laser, with pulsed thresholds as low as 1050 A/cm/sup 2/. Total pulsed power of 1.4 W at 658 nm is available from an 80 ..mu..m x 300 ..mu..m mesa-stripe laser. A differential quantum efficiency of approx.56% is measured. By examining the cavity length dependence of the threshold current density and quantum efficiency, it is apparent that the quantum well gain has not saturated in these structures. This suggests that devices containing a thinner ...

1987-11-23

400

Growth and characterization of new semi-organic L-proline strontium chloride monohydrate single crystals

We have investigated the growth behaviors of high temperature compatible ZrO_2 insulation coatings on Ag and AgMg sheathed Bi_2Sr_2Ca_1Cu_2O_x superconducting tapes depending on number of dipping and thermal conditions. The coatings were fabricated on long-length superconducting tape substrates using a solution derived from Zr tetrabutoxide, solvent and chelating agent for high magnetic field magnets. The layer-on-layer growth behaviors were characterized by environmental scanning electron microscope (ESEM), energy dispersive spectroscopy (EDS), X-ray maps and X-ray diffraction (XRD). This research showed that the ZrO_2 coatings were regularly grown on Ag-based tape substrates and coating thickness increased with increasing number of dipping. It was found that ceramic oxides formed at temperature range 450 and 550 deg. C. The final coating thickness changed between 6 and 8 #mu#m after annealing process. Resistance of insulation measured from surface and edge ...

2004-07-15

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401

Enjebi Island dose assessment

The present communication deals with the synthesis, single crystal growth and characterization of a new nonlinear optical material L-proline strontium chloride monohydrate (L-PSCM). Single crystals have been grown using the slow solvent evaporation technique. Single crystal XRD analysis confirmed that the crystal belongs to the orthorhombic structure with lattice parameter a=6.6966(3) A, b=12.4530(5) A, c=15.2432(5) A and space group P2_12_12_1. Presence of various functional groups in L-PSCM and protonation of the ions were confirmed by Fourier transform infrared spectroscopy (FT-IR) analysis. The melting point of the single crystal was found to be 126 "oC using DSC. Ultraviolet-visible spectral analyses showed that the crystal has low UV cut-off at 226 nm combined with very good transparency of 90% in a wide range. The optical band gap was estimated to be 5.82 eV. Capacitance and dielectric-loss measurements were carried out at different temperatures in the ...

2011-01-01

402

Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures

We have updeated the radiological dose assessment for Enjebi Island at Enewetak Atoll using data derived from analysis of food crops grown on Enjebi. This is a much more precise assessment of potential doses to people resettling Enjebi Island than the 1980 assessment in which there were no data available from food crops on Enjebi. Details of the methods and data used to evaluate each exposure pathway are presented. The terrestrial food chain is the most significant potential exposure pathway and /sup 137/Cs is the radionuclide responsible for most of the estimated dose over the next 50 y. The doses are calculated assuming a resettlement date of 1990. The average wholebody maximum annual estimated dose equivalent derived using our diet model is 166 mremy;the effective dose equivalent is 169 mremy. The estimated 30-, 50-, and 70-y integral whole-body dose equivalents are 3.5 rem, 5.1 rem, and 6.2 rem, respectively. Bone-marrow dose equivalents are only slightly ...

1987-07-01

403

Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for ...

1994-04-04

404

Effective thickness of CeO{sub 2} buffer layer for YBCO coated conductor by advanced TFA-MOD process

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength electro-optic ...

405

Effect of soil amendments and crop varieties on the amelioration of heavy metal uptake into crops grown on polluted soils of Bangladesh

YBCO films were fabricated on PLD-CeO{sub 2}/IBAD-Gd{sub 2}Zr{sub 2}O{sub 7}/Hastelloy substrates using the advanced TFA-MOD process. The effective thickness of the CeO{sub 2} buffer layer for obtaining high I{sub c} was investigated in short samples of YBCO films. The CeO{sub 2} buffer layer was epitaxially grown on an IBAD-Gd{sub 2}Zr{sub 2}O{sub 7} template tape with 18 deg. of {delta}{phi} by a reel-to-reel PLD system. The in-plane grain alignment of PLD-CeO{sub 2} buffer layers rapidly improved with the thickness and saturated at a critical thickness of 0.8 {mu}m. The size of CeO{sub 2} grains was about 1 {mu}m at the saturated thickness of {delta}{phi}. YBCO films with the thickness of 1 {mu}m were deposited by the TFA-MOD on the CeO{sub 2} buffer layer with different thickness films. Improvement of the CeO{sub 2} in-plane grain alignment resulted in increase of I{sub c}. The I{sub c} values of 250-290 A were obtained with the CeO{sub 2} layer thicker than ...

2007-10-01

406

Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si

Bangladesh possesses many industrial sites, whereby wastes and effluents are directly discharged into the environment without any treatment. Agricultural areas are contaminated thereby and the food quality is impaired. Therefore, the aim of the present work was to develop simple and cost effective strategies to reduce soil-plant transfer of harmful substances. Three sites were selected in the vicinity of Dhaka city (Tongi pharmaceutical, Tejgaon industrial and Hazaribagh tannery area). Field and pot experiments were carried out with different varieties of field crops (rice, wheat and tomato) and different soil amendments (cowdung, city waste compost, oil cake, waterhyacinth, poultry litter, lime and red mud). At the site Tongi, pollutants mainly consists of organic compounds. The soil of Tejgaon is acidic (pH=5.7), contains high organic matter and elevated concentrations of Zn (685 mg/kg), Pb (136 mg/kg), and Cd (2.6 mg/kg). The Hazaribagh region is polluted by a highly elevated ...

407

Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case ...

2002-01-01

408

Effect of magnetic field and pressure on U(Ni_1_-_xPd_x)_2Si_2 single crystals

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO_2 cover film, amount of dose decreases with the ...

2002-01-01

409

Effect of PbO on the repassivation kinetics of alloy 690

Single crystals of U(Ni_1_-_xPd_x )_2Si_2 for x = 0.05, 0.10 and 0.15 have been grown. Magnetization and electrical resistivity measurements were performed in a wide range of temperatures, magnetic fields and high pressures in order to study stability of magnetic phases in the solid solutions between UNi_2Si_2 and UPd_2Si_2 with a special emphasis on the type of ground state. In UPd_2Si_2 the simple AFI-type antiferromagnetic structure of U moments is observed at low temperatures. UNi_2Si_2 adopts the uncompensated AF structure (UAF) with the ++- stacking of U moments along the c-axis and consequently this compound exhibits a spontaneous magnetization corresponding to 1/3 of the U moment. The substitution of Pd for Ni leads to a rapid decay of the spontaneous magnetization. The evolution of magnetization and electrical resistivity behavior with Pd doping is tentatively attributed to the coexistence of the AF-I and UAF phases in the ground state of ...

2002-07-01

410

Effect of PbO on the repassivation kinetics of alloy 690

Effects of PbO on the repassivation kinetics of alloy 690TT were examined using the rapid scratching electrode technique under a potentiostatic condition to elucidate the influence of PbO on SCC resistance of the alloy. The repassivation kinetics of the alloy was analyzed in terms of the current density flowing from the scratch, i(t), as a function of the charge density that has flowed from the scratch, q(t). Repassivation on the scratched surface of the alloy occurred in two kinetically different processes; passive film initially nucleated and grew according to the place exchange model in which log i(t) is linearly proportional to q(t) with a slope of 1/K, and then grew according to the high field ion conduction model in which log i(t) is linearly proportional to 1/q(t) with a slope of cBV. 1/K and cBV are parameters representing the SCC susceptibility as well as repassivation rate of the alloy at an initial and an intermediated stages of repassivation respectively. The higher the ...

2000-07-01

411

Ecology and resistance of Moraxella-Acinetobacter

Effects of PbO on the repassivation kinetics of alloy 690TT were examined using the rapid scratching electrode technique under a potentiostatic condition to elucidate the influence of PbO on SCC resistance of the alloy. The repassivation kinetics of the alloy was analyzed in terms of the current density flowing from the scratch, i(t), as a function of the charge density that has flowed from the scratch, q(t). Repassivation on the scratched surface of the alloy occurred in two kinetically different processes; passive film initially nucleated and grew according to the place exchange model in which log i(t) is linearly proportional to q(t) with a slope of 1/K, and then grew according to the high field ion conduction model in which log i(t) is linearly proportional to 1/q(t) with a slope of cBV. 1/K and cBV are parameters representing the SCC susceptibility as well as repassivation rate of the alloy at an initial and an intermediated stages of repassivation respectively. The higher the ...

2000-08-24

412

Diffusion in silicon isotope heterostructures

The diverse microenvironments of foods, changing with processing and preservation, might provide conditions that would enhance the growth of microorganisms which are the principal cause of spoilage, off-odor and unpleasant flavor in foods. Radiation is a potential process which may provide a product with far superior microbial quality for food preservation, by reduction of microbial population; elimination of food-borne pathogens; extension of shelf-life; and reduction of spoilage. The aim of irradiation at low dose level is to eliminate certain microorganisms, especially spoilage types and those of public health significance. But, the radurization dose allows the outgrowth of radioresistant bacteria. Certain strains of Moraxella-Acinetobacter (M-A) groups have been recognized as radioresistant bacteria (Welch and Maxcy, 1975), which may have gone unnoticed by food microbiologists, since these bacteria have not been associated with problems and are present in relatively small numbers. ...

1977-01-01

413

Development of experimental verification techniques for non-linear deformation and fracture on the nanometer scale.

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion ...

2004-05-14

414

Crystal growth of epitaxial CVD diamond using [sup 13]C isotope and characterization of dislocations by Raman spectroscopy

This work covers three distinct aspects of deformation and fracture during indentations. In particular, we develop an approach to verification of nanoindentation induced film fracture in hard film/soft substrate systems; we examine the ability to perform these experiments in harsh environments; we investigate the methods by which the resulting deformation from indentation can be quantified and correlated to computational simulations, and we examine the onset of plasticity during indentation testing. First, nanoindentation was utilized to induce fracture of brittle thin oxide films on compliant substrates. During the indentation, a load is applied and the penetration depth is continuously measured. A sudden discontinuity, indicative of film fracture, was observed upon the loading portion of the load-depth curve. The mechanical properties of thermally grown oxide films on various substrates were calculated using two different numerical methods. The first method ...

2005-11-01

415

Comparison of Al{sub 0.51}In{sub 0.49}P and Ga{sub 0.51}In{sub 0.49}P window layers for GaAs and GaInAsP solar cells

[sup 13]C epitaxial diamond films have been grown on [sup 12]C-type IIb diamond substrates doped with boron, using electron assisted chemical vapor deposition. The relation between etch pits to dislocations in [sup 13]C diamond film and the broadening of the first-order Raman peak was examined. The reactant gas was [sup 13]CH[sub 4] of > 99% purity. The substrate temperature was varied from 943 to 1300 C. The uneven surface morphology was confirmed by atomic force microscopy (AFM) and laser microscopy. From 943 to 1030 C, etch pit rows along left angle 100 right angle were observed. At 991 C, the etch pit density on a row was 3300 to 5000 pits/cm. The Ar[sup +] laser beam was focused on a transparent area near the row of etch pits, where the boron impurity of the substrate is less than several 10 ppm. The first-order Raman line of [sup 13]C epitaxial diamond film was broadened to 3.6-4.0 cm[sup -1]. The line broadening was 50-90% compared with that of the [sup ...

1993-03-01

416

Characterization of aluminum surfaces: Sorption and etching

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

1997-12-31

417

Characterization of PdAu thin films on oxidized silicon wafers: interdiffusion and reaction

Aluminum, due to its low density and low cost, is a key material for future lightweight applications. However, like other structural materials, aluminum is subject to various forms of corrosion damage that annually costs the United States approximately 5% of its GNP [1]. The main goal is to investigate the effects of various solution anions on aluminum surfaces, and specifically probe pit initiation and inhibition. Using surface analysis techniques including X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy, results have been correlated with those obtained from electrochemical methods and a radiolabeling technique developed in the Wieckowski laboratory. Analysis of data has indicated that important variables include type of anion, solution pH, and applied electrode potential. While aggressive anions such as chloride are usually studied to elucidate corrosion processes to work ultimately toward inhibition, its corrosive properties can be ...

2001-01-01

418

Characterization and wear tests of steel surfaces implanted with oxygen, aluminum, and carbon dioxide

Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride films grown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration profiles of these silicides have a maximum at the interface with decay on both sides. The density and the face-centered cubic (fcc) lattice parameter of the film are ...

2003-05-31

419

Changes in the behaviour and physical and chemical characteristics of soil after adding populus euramericana leaves

A number of screening tests were performed to determine ion species that effectively reduce wear rates when implanted in four industrial steels. Ball bearing steel 100Cr6 (AISI 52100) showed a wear rate reduction by a factor of 20 when implanted with carbon dioxide to a dose of 5x10{sup 17} cm{sup -2} with a non-mass-separated ion beam and by a factor of {>=}20 when implanted with 5x10{sup 17} cm{sup -2} oxygen ions. For the ferritic and martensite steels X90CrMoV18 (AISI 440B, unhardened and hardened) also a strong wear reduction after implantation of oxygen ions was found. Co-implantation of aluminum and oxygen also reduces wear rates of X90CrMoV18, of S6-5-2 (AISI M2), and of 100Cr6, respectively. For comparison, thin oxide layers were grown in a low-temperature thermal oxidation process. These experiments also yielded reduced wear rates by a factor of 10. The surfaces were investigated and characterized by XPS, SIMS, TEM, and microhardness measurements to ...

1991-07-01

420

Biosorption of lead by e. coli strains expressingvitreoscilla hemoglobin: isotherm modeling with two-and three-parameter models

Soil erosion and small annual additions of organic matter from plant-sources are the major causes of low organic-matter content in our soils. The tops of the plants, fallen to the soil- surface, remain there are incorporated, the plant-roots, shrubs, grasses. And other native plants contribution much towards the soil organic matter. Populus spp. Are grown commonly around farmers' fields in the state of Azad Jammu and Kashmir. A pot-experiment was conducted to study the effect of addition of populus euramericana leaves on various physical and chemical characteristics of the soil. Soil was kept at field-capacity level and incubated at room temperature for 10 months after adding 25, 50, and 75 g of Populus curamericana leaves per pot. Changes in organic-matter content. PH, cation-exchange capacity extractable potassium, water-holding capacity, and bulk density were investigated, after incubation for 6,8,and 10 months. There was a linear increase in organic-matter ...

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421

Arsenic species and leachability in the fronds of the hyperaccumulator Chinese brake (Pteris vittata L.)

Biosorption is presented as an alternative choice to traditional physicochemical means for removing toxic metals from groundwater and wastewaters. Removal of lead (Pb) from solutions was studied using Escherichia coli (parental) and Vitreoscilla hemoglobin (VHb)-expressing E. coli (transformed) cells. Pb biosorption was increased in bacterial hemoglobin-expressing E. coli cells grown in Luria broth B containing different concentrations of Pb{sup 2+}. The maximum Pb{sup 2+} biosorption of transformed and parental cells was determined to be 612 and 370 {mu}g Pb/g biomass, respectively. The inhibitory effect of Pb{sup 2+} on the parental strain was determined at 10 ppm. However, in transformed cells, Pb{sup 2+} was lethal at 100 ppm. The optimum aeration required for the transformed cells was lower than that for the parental strain on a growth yield basis. A linear correlation was established between the biosorption and uptake amounts. The biosorption process was ...

2010-06-15

422

Application of neutron activation analysis method in leaves of Casearia obliqua medicinal plant; Aplicacao do metodo de analise por ativacao com neutrons na analise de folhas da planta medicinal Casearia obliqua

Arsenic was predominantly present as inorganic arsenite in the fronds of the hyperaccumulator Chinese brake. - Arsenic speciation is important not only for understanding the mechanisms of arsenic accumulation and detoxification by hyperaccumulators, but also for designing disposal options of arsenic-rich biomass. The primary objective of this research was to understand the speciation and leachability of arsenic in the fronds of Chinese brake (Pteris vittata L.), an arsenic hyperaccumulator, with an emphasis on the implications for arsenic-rich biomass disposal. Chinese brake was grown for 18 weeks in a soil spiked with 50 mg As kg"-"1 as arsenate (AsO_4"3"-), arsenite (AsO_3"3"-), dimethylarsinic acid (DMA), or methylarsonic acid (MMA). Plant samples were extracted with methanol/water (1:1) and arsenic speciation was performed using high performance liquid chromatography coupled with atomic fluorescence spectrometry. The impacts of air-drying on arsenic species and ...

2003-07-01

423

AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy

The pharmacological properties of medicinal plants have been related to the presence of organic compounds, however elements are also known to have an important participation in the active compounds constitution process. In this study, instrumental neutron activation analysis (INAA) was applied to determine elements in leaves of Casearia obliqua medicinal plant collected at two different locations in the Atlantic Forest, Brazil, SP. Soil samples collected from where this plant was grown were also analyzed in order to verify if there is a correlation between the elements present in soils and plant leaves. Br, Ca, Cl, Co, Cr, Cs, Fe, K, La, Mn, Na, Rb, Sb, Sc and Zn were determined in C. obliqua leaves and the elements As, Ca, Ce, Eu, Fe, Hf, La, Lu, Nd, Rb, Sc, Sm, Tb, Th, U and Zn in soils. Soil samples collected from two different locations presented similar concentrations for most elements. Likewise, C. obliqua leaves collected from the two locations presented ...

2005-07-01

424

Agronomic evaluation of Beirut municipal waste compost

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to depend on growth conditions and dopant behaviour during the growth, and it varied ...

1987-06-01

425

A High-Frequency Secondary Event During the 2004 M6.0 Parkfield Earthquake

The disposal of municipal solid waste in an environmentally sound manner is a major problem worldwide. The composting of the organic fraction of refuse transforms it into soil amendment that can be recycled on agricultural lands. In order to promote the use of compost among farmers, agronomic investigations have to evaluate the impact of its use on soil properties and plant growth. In a greenhouse experiment, a sample of locally produced compost was applied to a sandy clay soil at rates equivalent to 0, 25, 50, 100, and 200 t/ha with supplemental addition of NH_4 NO_3 at levels equivalent to 0, 25, 50 and 100 Kg N/ha. Barley (Hordium vulgare L.) and corn (Zea mays L. indentata) were grown as indicator crops and soil properties were determined over a period of 150 days. Plant growth was affected by N starvation until the compost was stabilized in the soil. Nitrogen starvation persisted for a longer period with increasing applications of compost. Supplemental ...

426

X-dosimetry of Tl(InS_2)_1_-_x(FeSe_2)_x single crystals

We present an image of the rupture propagation of the 2004 M6.0 Parkfield earthquake using records from a dense network of local strong motion stations. We back-propagate high-frequency waveforms in 3D with a method, similar to reverse time migration, to obtain an estimate of the distribution of radiated high-frequency seismic energy in space and time. The image is forced to be coherent at the known hypocenter location and the quake origin time by applying small static time shifts obtained using waveform cross-correlation. We observe that the Parkfield earthquake radiated a distinct secondary high-frequency phase, which is located about 12.5~km northwest of the hypocenter with an onset of seismic radiation about 5~s after the rupture initiation. The time history of the back-projection suggests a rupture velocity of 2.5~km/s between hypocenter and subevent. The back-projection result is confirmed by inversion of picked arrival times of the secondary event clearly visible at some of the ...

2007-12-01

427

Surface modification, organometallic and polyaryl polymer coatings, and flame spray technologies for preventing corrosion of metals. Final report

Tl(InS_2)_1_-_x(FeSe_2)_x single crystals (where x=0; 0.001; 0.005; 0.01 and 0.015) were grown by the Bridgman-Stockbarger method. Obtained single crystals were crystallized in monoclinic structure. The present paper deals with experimental results relative to X-ray dosimetric characteristics of the Tl(InS_2)_1_-_x(FeSe_2)_x solid solutions at 300 K. Installation URS-55a was the source of radiation. X-ray radiation dose (E) falling on the crystals is measured by the crystalline X-ray dosimeter DRGZ-02. The value of X-ray conductivity coefficient K_#sigma# characterising X-ray sensitivity is defined as K_#sigma#= (#sigma#_E-#sigma#_0)/E#sigma#_0. where #sigma#_E is conductivity under the effect of X-ray radiation by intensity E, #sigma#_0 is conductivity in the lack of radiation. Comparing X-ray dosimetric characteristics of TlInS_2 and Tl(InS_2)_1_-_x(FeSe_2)_x crystals notes that because of partial substitution of [InS_2]- anion radical by [FeSe_2] there have been ...

2003-09-15

428

Structures and luminescent properties of new uranyl-based hybrid materials

To improve adherent properties of electrogalvanized steel (EGS) to polymeric topcoats, the surfaces of EGS were modified by polyelectrolyte-modified zinc phosphating solution. The electrochemical reaction between phosphating solution and EGS led to the complete coverage with fully grown hopeite crystals after only 5 sec treatment, thereby improving adhesion to topcoating and providing protection of EGS against corrosion. To evaluate the ability of polyphenylene sulfide (PPS) polyaryl thermoplastic coatings to protect zinc phosphate (Zn{center_dot}Ph)treated steels from corrosion in a wet, harsh environment ( 1.0 wt % H{sub 2}SO{sub 4}, 3.0 wt % NaCl and 96.0 wt % water at temperatures from 25{degrees} to 200{degree}C), we exposed them in an autoclave to attempt heating-cooling cyclic fatigue tests (1 cycle = 12 hr at 200{degrees}C + 12 hr at 25{degrees}C) up to 90 times. The major chemical reaction at the interface between the PPS and Zn in the Zn-Ph layer during ...

1995-07-01

429

Photoelectrochemical Water Splitting for Hydrogen Production Using Multiple Bandgap Combination of Thin-Film-Photovoltaic and Photocatalyst

Six uranyl coordination compounds, UO_2(OH)(PYCA) (1), UO_2(PYCA)_2(H_2O).2H_2O (2), UO_2(PIC)_2 (3), UO_2(H_2O)_2(NIC)_2 (4), UO_2(OH)(HINIC)(INIC) (5), and UO_2(PYTAC)_2(H_2O)_2 (6) were grown as single crystals via hydrothermal synthesis (PYCA - pyrazine-2-carboxylate, PIC - picolinate, NIC - nicotinate, INIC - iso-nicotinate, and PYTAC - 2-(pyridin-4-yl)thiazole-5-carboxylate) to study their optical properties. All six compounds have been identified via single crystal X-ray diffraction and fully characterized via powder X-ray diffraction, infrared spectroscopy, UV-Vis spectroscopy, and fluorescence spectroscopy. Three of the complexes, 1, 3, and 6, represent new structures, and their synthesis and structural characterization is detailed within. The structures of 2, 4, and 5 have previously been reported in the literature. Coordination polymer 1 crystallizes in the orthorhombic space group Pca21 (a = 13.5476(5) Angstroms, b = 6.6047(2) Angstroms, c = 8.3458(3) ...

2011-06-01

430

Optimization of nonhomogeneous facesheets in composite sandwich plates

One of the NASA research activities was to identify, characterize, and simulate a series of technologies that could be used for hydrogen production at NASA Kennedy Space Center (KSC) using locally available sources. This project examined the production of hydrogen from solar energy. To produce hydrogen by water splitting, the operating voltage of conventional photovoltaic (PV) cells cannot supply the overvoltage required. Thus, the objective of this project was to research and develop photoelectrochemical (PEC) cells that can supply the required voltage for water splitting by constructing a multiple bandgap tandem PV cell and a photocatalyst that can be activated by infrared (IR) photons transmitted through the PV cell. The proposed concept is different from conventional PEC water splitting by using multiple band gap combinations. The advantages for this PEC cell concept is that the PV cells are not in contact with the electrolyte solution, thus reducing the problems of corrosion and ...

2009-01-01

431

In-situ growth of porous alumino-silicates and fabrication of nano-porous membranes

Minimum weight design is an important criterion in aircraft and spacecraft because it allows either an increased pay-load or higher performance. As a result, the use of composite sandwich panels has grown due to their light weight and high rigidity. In order to further increase the efficiency of these structures, designers have used different materials in different shapes in the facesheets and in the core. One of the most recent innovations has been the use of a uniform net of carbon fibre/epoxy as the facesheets. In the present study, the optimal design of sandwich plates with heterogeneous, facesheets is treated. The plate mass is minimized, considering the first natural frequency and certain failure loads as constraints. Weight reduction is obtained by defining a nonuniform distribution of composite material in the facesheets. Initially, the facesheets are assumed to be constructed of composite strips in a regular pattern. During the optimization process, both ...

1997-01-01

432

Individual Radiation Protection Monitoring in the Marshall Islands: Rongelap Atoll (2002-2004)

Feasibility of depositing continuous films of nano-porous alumino-silicates, primarily zeolites and MCM-41, on metallic and non-metallic substrates was examined with an aim to develop membranes for separation of gaseous mixtures and also for application as hydrogen storage material. Mesoporous silica was deposited in-side the pores of these nano-porous disks with an aim to develop membranes for selective separations. Our study involves supported zeolite film growth on substrates using in-situ hydrothermal synthesis. Faujasite, Silicalite and Mesoporous silica have been grown on various metallic and non-metallic supports. Metallic substrates used for film growth included anodized titanium, sodium hydroxide treated Titanium, Anodized aluminum, and sintered copper. A non-metallic substrate used was nano-porous aluminum oxide. Zeolite film growth was characterized using Scanning Electron Microscope (AMRAY 1820) and High Resolution Transmission electron microscope. ...

2009-01-01

433

CuPt-type ordering of MOCVD In{sub 0.49}Al{sub 0.51}P.

The United States Department of Energy (U.S. DOE) has recently implemented a series of strategic initiatives to address long-term radiological surveillance needs at former U.S. nuclear test sites in the Marshall Islands. The plan is to engage local atoll communities in developing shared responsibilities for implementing radiation protection monitoring programs for resettled and resettling populations in the northern Marshall Islands. Using the pooled resources of the U.S. DOE and local atoll governments, individual radiological surveillance programs have been developed in whole body counting and plutonium urinalysis in order to accurately assess radiation doses resulting from the ingestion and uptake of fallout radionuclides contained in locally grown foods. Permanent whole body counting facilities have been established at three separate locations in the Marshall Islands including Rongelap Atoll (Figure 1). These facilities are operated and maintained by ...

2006-01-17

434

Correlation between the microstructure and the physical properties of HTSC single crystals and films. Final report; Korrelation zwischen der Realstruktur und den physikalischen Eigenschaften von HTSL-Einkristallen und -Schichten. Abschlussbericht

CuPt-type ordering in In{sub 0.49}Al{sub 0.51}P is studied by TEM. The lattice-matched film was grown by MOCVD on a GaAs substrate oriented 10{sup o} off (001) towards [110], at 650 C and 25 nm/min. TEM [110] and [1{bar 1}0] cross-sections (XS) were made by wedge polishing and 2 kV Ar ion milling. In CuPt-type ordering of In{sub 0.52}Ga{sub 0.48}P, alternating In-Ga-In-Ga {l_brace}111{r_brace} planes of group III atoms produce 1/2 {bar 1}11 and 1/2 1{bar 1}1 order spots in the 110 SADP, while the [1{bar 1}0] SADP shows no order spots [1-3]. A few studies have reported this type of order in In{sub 0.49}Al{sub 0.51}P [4]. The 004 BF image of the [1{bar 1}0] XS in Fig. 1 shows uneven light/dark contrast modulation due to phase separation often observed in In{sub 0.52}Ga{sub 0.48}P. There are also light/dark layers marked ML parallel to the film growth plane; such unintentional multilayers have also been observed [5] but their origin is not understood. Order lamellae ...

2002-03-14

435

A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

1. In order to carry out isothermic crystal growth experiments of YBCO the 123 primary crystallization field was determined by means of phase diagram investigations and crystal growth experiments at different oxygen partial pressure. 2. YBCO single crystals of high crystallographic perfection were grown and conclusions on the flux pinning mechanism were drawn. 3. By means of Liquid Phase Epitaxy (LPE) single crystalline (Tc{approx}90 K; {Delta}T{<=}0.5 K) c- and a,b- YBCO fils have been prepared on NdGaO{sub 3} and LaGaO{sub 3} substrates. The films were characterized structurally and magnetically. 4. Our fist melt textured YBCO ``single crystals`` possess intracrystalline critical current densities >10{sup 4} A/cm{sup 2} at B{<=}2T. The irreversibility inductions are {<=}6 T at 77 K. A simple demonstrator was constructed together with the IFW Dresden and a growth model was developed. 5. Using above all torque magnetometer measurements we separated ...

1993-06-01

436

35 years of Thermoluminescence Dosimetry (TLD) in personnel and environmental monitoring in India - a tribute to Dr. K G Vohra

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The ...

1999-04-01

437

High-efficiency, thin-film- and concentrator solar cells from GaAs. Final report; High-efficiency, Duennschicht- und Konzentrator-Solarzellen aus Galliumarsenid. Abschlussbericht

Full text: Thermoluminescence (TL) is a phenomenon of light emission caused by heating a pre-irradiated material. When ionizing radiation hits a TL material, electrons are freed from some atoms and moved in the material, leaving behind 'holes' of positive charge. Subsequently when the TL material is heated, the electrons and the 'holes' re-combine, and release the extra energy in the form of light. The light intensity can be measured, and related to the amount of energy initially absorbed through exposure to the ionizing radiation. In nineteen sixties thermoluminescence dosimeters (TLD) became popular for dosimetric applications in view of their small size, sensitivity and accuracy. Consequently, in early seventies, several countries started adopting of TLD for personnel monitoring. The idea of introducing TLD to replace the then prevalent film dosimeter for personnel monitoring in India was mooted and successfully implemented by Dr. K G Vohra. Limitations of prevalent film dosimeters ...

438