Sep 1, 2011 ... Title: Application of chloropicrin to Douglas-fir stumps to control laminated root rot does not affect infection or growth of regeneration 16 growing ...
An experimental study was conducted to determine the effects of ply thickness in composite laminates on thermally induced cracking and changes in the coefficient of thermal expansion (CTE). After a few thermal cycles, laminates with thick-plies cracked, resulting in large changes in CTE. CTE`s of the thin-ply laminates were unaffected by microcracking during the first 500 thermal cycles, whereas, the CTE`s of the thick-ply laminates changed significantly. After about 1500 cycles, microdamage had also reduced the CTE of the thin-ply laminates to a value of about half of their initial value.
The crack growth behavior and fracture toughness of two laminated metal composites (6090/SiC/25p laminated with 5182 and ultrahigh-carbon steel laminated with brass) have been studied in both ``crack arrester`` and ``crack divider`` orientations. The mechanisms of crack growth were analyzed and extrinsic toughening mechanisms were found to contribute significantly to the toughness. The influence of laminate architecture (layer thickness and component volume function), component material properties and residual stress on these mechanisms and the resulting crack growth resistance are discussed.
A 25m wind turbine blade was tested to failure when subjected to a flapwise load. With the test setup, it was possible to test the blade to failure at three diffe-rent locations. The objective of these tests is to learn about how a wind turbine blade fails when exposed to a large flapwise load and how failures propagate. The report shows also results from ultra sonic scan of the surface of the blade and it is seen to be very useful for the detection of defects, especially in the layer between the skin laminate and the load carrying main spar. Acoustic emission was successfully used as sensor for the detection of damages in the blade during the test. The report contains measurements of the total deflection of the blade, the local deflection of the skin and the load carrying main spar and also measurement of strain all as a function of the applied load and up to failure of the blade. The 'post mortem' analysis and description of ...
Elastically deforming thin glass (thickness = 0.13 to 0.80 mm) provides an alternate method of forming a curved glass reflector which can eliminate some of the disadvantages of thicker glass. A concept is described where silvered thin glass is bonded to a steel backing to form a laminate with a reflectance greater than 93%. Subsequent bending of the flat reflector laminate to a concentrating profile produces compressive stresses throughout the glass if the laminate is properly designed. These compressive stresses enhance fracture resistance and the lamination provides protection for the silver. The design of the laminate is outlined for 0.25 and 0.51 mm thickness glass and fabrication procedures are discussed. Thermal/humidity cycling, hail impact, bond strength measurements and reflectance results are presented which demonstrate the performance capabilities of this reflector ...
AbstractQuantities and types of ceramides and their relationships to physical properties of the horn covering the claws of clinically normal cows and cows with subclinical laminitis were...Full Text Available
The mechanical properties of laminated window profiles manufactured using two types of adhesives were determined. The objective of this study is to evaluate the effects of heat treatment on some mechanical...Full Text Available
A core preservation package was developed to maintain the reservoir characteristics of core samples and consequently to improve the quality of data obtained through laboratory core analyses. The package is a heat-sealable plastic-aluminum laminate similar to those common in the food-packaging industry. The laminated core preservation package acts as an impermeable barrier to water vapor and gases, and is resistant to chemical alteration and degradation by core fluids. These performance characteristics result in effective core preservation by maintaining the fluid content of the core. Other advantages of the laminated package are that it is fast and simple to use and eliminates the cumbersome dip-coat step used in some core preservation methods.
Annealing of magnetostrictive Metglas foils, subsequently incorporated into laminated Metglas/Pb(Zr, Ti)O3 magnetoelectric (ME) composites, is shown to result in improved magnetic properties, as well as ME coefficients. Annealing of the foils at 350 ?C resulted in partial crystallization, without oxidation or magnetic cluster formation that would reduce the magnetization. Laminate composites made with these annealed Metglas foils had improved ME coefficients.
... Title : Wear Rate and Friction Coefficient in Liquid Nitrogen and Hydrogen of Steel Sliding on Polymer Laminates (Various Fabrics and Polymers. ...
The nuclear lamina proteins, prelamin A, lamin B, and a 70-kD lamina-associated protein, are posttranslationally modified by a metabolite derived from mevalonate. This modification can be inhibited by treatment with (3-R,S)-3-fluoromevalonate, demonstrating that it is isoprenoid in nature. We have examined the association between isoprenoid metabolism and processing of the lamin A precursor in human and hamster cells. Inhibition of 3-hydroxy-3-methylglutaryl coenzyme A reductase by mevinolin (lovastatin) specifically depletes endogenous isoprenoid pools and inhibits the conversion of prelamin A to lamin A. Prelamin A processing is also blocked by mevalonate starvation of Mev-1, a CHO cell line auxotrophic for mevalonate. Moreover, inhibition of prelamin A processing by mevinolin treatment is rapidly reversed by the addition of exogenous mevalonate. Processing of prelamin A is, therefore, dependent on isoprenoid metabolism. ...
structures made out of composite laminates and/or composite sandwich panels. A Spectral Finite Element Method (SFEM) [19, 20] is used for evaluating the ...
BackgroundMutations that disrupt the conversion of prelamin A to mature lamin A cause the rare genetic disorder Hutchinson-Gilford progeria syndrome and a group of laminopathies....Full Text Available
In several respects the dorsal thalamus of Trichosurus presents a level of organizational complexity considerably in advance of that seen in Didelphis. In particular, such features as the lamination...Full Text Available
A 1000-watt CO/sub 2/ laser has been demonstrated as a reliable production machine tool for cutting of plastics, high strength reinforced composites, and other nonmetals. More than 40 different plastics have been laser cut, and the results are tabulated. Applications for laser cutting described include fiberglass-reinforced laminates, Kevlar/epoxy composites, fiberglass-reinforced phenolics, nylon/epoxy laminates, ceramics, and disposable tooling made from acrylic.
A thesis is presented on improving the understanding of the fatigue properties of wood and fatigue failure mechanisms in the design of wind turbine blades. Three main areas were researched: the effect of R ratio on fatigue life, the effect of moisture on fatigue life and the development of cumulative damage laws. Tests were carried out on mainly four-ply laminates. Recommendations to future work are outlined. (U.K.).
A study was carried out to identify optimal laminate/oil combinations for low pressure oil filled and high pressure pipe-type cables, and to establish taping criteria under factory conditions. Laminates from two sources were evaluated in conjunction with Sun XX high viscosity mineral oil and Cosden 015SH polybutene oil for high pressure type cables, and Dussek TC-2288N mineral oil, Shell P2 dedecylbenzene and Chevron DF-100 alkylbenzene for low pressure oil-filled cables. Swelling tests, infrared analysis, dissipation and dielectric measurements, impulse tests and a taping trial were performed. It was found that there is no appreciable difference in performance of both laminates when tested on model cables in a variety of oils. Both types exhibited superior aging characteristics vis-a-vis cellulose paper when tested with a variety of oils and at temperatures up to 105{degree}C. For pipe type cable, high viscosity polybutene ...
This experiment was done to determine the effects of irradiation on the physical properties of three kinds of laminated packaging materials, i.e. polypropylene-polypropylene, polypropylene-polyethylene, polyester-polyethylene. Observations were made on pinhole production, leakage, oil resistance, resistance against insect penetration, colour, odour tensile strength, elongation at break, seal strength and tear resistance. The samples were irradiated with doses of 0, 5 and 10 kGy, then stored at room temperature and examined after 0, 3, 6 and 12 months of storage. The results showed that irradiation doses up to 10 kGy, as well as storage up to 12 months, did not create pinholes, or leakage in pouches prepared from laminated films. The resistance of the films to oil and insect penetration, the colour, and the odour were also unchanged. Both irradiation and storage treatments had a significant effect on physical properties of the ...
A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.
A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface. 12 figs.
This paper describes the development of cellulose paper/plastic film/cellulose paper laminate insulated Self-Contained 500 kV Oil-Filled (OF) Cable and its accessories. Dielectric loss of this new cable was confirmed to be about one third that of conventional kraft paper cable. Moreover, by employing the reduced insulation thickness of 25 mm rather than that of 33 mm, as is usual with conventional cables, the new cable could be made very compact, due to the high dielectric strengths of laminated paper. As a result, the shipping reel length of the new cable, which is about 10% lighter in total weight and 10% smaller in overall diameter than conventional cables, could be dramatically increased. The reliability and the stability of the new cable have been demonstrated by the successful completion of a one and a half year field test.
Research and development has been performed on photochromic materials expected to be used in ultra-high density recording, high resolution indication and photoswitches. With regard to molecular orientation in the ternary system mixed LB film, the result of structural analysis by XPM spectrum revealed that the acceptor constituent in the LB film is so structured that it is separated and laminated with two other constituents, and that the sensitizer constituent and the donor constituent are not recognized of being separated definitely. Regarding the electron movement reaction in the solid phase system, a photo-current measuring experiment was carried out on the laminated film which is vacuum-deposited with the ternary system comprising of the donor, sensitizer, and acceptor. It was concluded that the observed photo-current reflects the electron movement reaction in the solid phase as it is. For the photo-current in the LB film, increase in the ...
A porous tooling system was selected for the processing of Graphite/PMR-15 Polyimide laminates in thickness up to 3.2 mm. (0.125 inch). This tool system must have a reasonable strength, permeability dimensional stability, and thermal conductivity to accomplish curing at 600 F and 200 psi and 200 psi autoclave temperature and pressure. A permeability measuring apparatus was constructed and permeability vs. casting water level determined to produce tools at three different permeability levels. On these tools, laminates of 5, 11, and 22 plies (.027, .060, and 0.121 inch) were produced and evaluated by ultrasonic, mechanical, and thermal tests to determine the effect of the tool permeability on the cured laminates. All tools produced acceptable laminates at 5 and 11 plies but only the highest permeability produced acceptable clear ultrasonic C-Scans. Recommendations are made for future investigations of ...
A plane stress constitutive relation is developed for laminate composites undergoing matrix cracking and therefore displaying significant nonlinear stress-strain behavior. The constitutive relation is similar in some respects to a phenomenological theory of plasticity in that it is fit to data from uniaxial tests. The constitutive equations are specialized to brittle matrix composites (especially CMCs) in the form of cross-piles and quasi-isotropic laminates. Several problems involving stress redistribution at holes and notches due to nonlinear stress-strain behavior are investigated with the aid of the constitutive law.
In 1969, the authors started R and D on a polypropylene laminated paper (PPLP) as a new low-loss insulating paper for oil-filled (OF) cables. Through the material research and the trial manufacture of 275 kV OF cable and four years of long-term field test, PPLP has reached the stage of commercial use. This paper introduces a summary of the history of the development of PPLP, the characteristics of PPLP and cable, the results of long-term field test of 275 kV cable, and other relevant data.
Calculations, drawing principally on developments at AERE Harwell, of the relaxation about lattice defects are reviewed with emphasis on the techniques required for such calculations. The principles of defect modelling are outlined and various programs developed for defect simulations are discussed. Particular calculations for metals, ionic crystals and oxides, are considered. (UK).
A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and ...
In the present paper an attempt is made to describe transverse cracking of cross-ply ([0{sup o}{sub n}/90{sup o}{sub m}]{sub s}) laminates subjected to an external applied load and a temperature change. For this purpose a new method is suggested which was developed on the basis of the energy balance based finite fracture criterion suggested by Hashin (1996) [Hashin, Z., 1996. J. Mech. Phys. Solids 44, 1129]. In this approach the value of the specific surface energy (the critical energy release rate) is assumed to be dependent on a random microdamage distribution in the material. Hence, it is assumed to be a random function of location. A new probabilistic technique is developed to take this randomness into consideration. It is shown that only one unknown probabilistic function is required, namely the probability density function of the specific surface energy. This is determined by fitting the external stress and the corresponding crack density to experimental data ...
Elastic and elasto-plastic modelling of indentation in CFRP cross-ply laminates has been performed. Detailed knowledge of the field solutions in the volume below the indentor forms the basis for the reported micromechanical interpretation of the observed damage in test specimens. The analysis shows that matrix cracks originate at sites of maximum tensile stress perpendicular to fibers. The predicted stress fields due to indentation show that stress concentrations occur in the interface between alternating plies. It is found that microcracking in this zone is a precursor to the observed failure. This analysis is supported by in-situ scanning electron microscopy during loading by a cylindrical indentor onto the laminate supported on a rigid substrate. The microscopy reveals microdamage in the region of interfacial tensile stress concentrations. The onset of indentation failure in these layered composites suggests that plastic interleaves would ...
Kinetic Monte Carlo simulations are used to analyze the ripening and dissolution of small Si interstitial clusters and #left brace#113#right brace# defects, and its influence on transient enhanced diffusion of dopants in silicon. The evolution of Si interstitial defects is studied in terms of the probabilities of emitted Si interstitials being recaptured by other defects or in turn being annihilated at the surface. These two probabilities are related to the average distance among defects and their distance to the surface, respectively. During the initial stages of the defect ripening, when the defect concentration is high enough and the distance among them is small, Si interstitials are mostly exchanged among defects with a minimal loss of them to the surface. Only when defects grow to large sizes and their concentration ...
The theoretical treatment of the relation between the critical angle of planar channeling and the characteristics of crystal lattice defects is carried out. The predictions are made about some typical forms of the critical angle dependence on the mean-square static displacement produced by defects, and then these predictions are detailed for the cases of homogeneous disordering, spherical clusters of point defects and dislocation loops. Analytical results are supported by the exact computer calculations for the defects in the intermetallic A-15 compounds.
A laminated material composed of glass cloth/polyimide film/epoxy resin will be used as an insulating material for superconducting coil of International Thermonuclear Experimental Reactor (ITER). In order to keep safe and stable operation of the superconducting coil system, it is indispensable to evaluate radiation resistance of the material, because the material is exposed to severe environments such as high radiation field and low temperature of 4 K. Especially, it is important to estimate the amount of gases evolved from the insulating material by irradiation, because the gases affect on the purifying system of liquid helium in the superconducting coil system. In this work, the gas evolution from the laminated material by gamma ray irradiation at liquid nitrogen temperature (77 K) was investigated, and the difference of gas evolution behavior due to difference of composition in the epoxy resin was discussed. It was found that the main gases ...
Kerf geometry, kerf wall features, and cutting front characteristics of an Abrasive Waterjet (AWJ) machined Graphite/Epoxy (Gr/Ep) laminate were studied. A macroscopic analyses suggests that geometrical features associated with AWJ machining of Gr/Ep laminates are influenced by three macro regions along the cutting depth. The presence of these regions, including initial damage at jet entry, smooth cutting, and rough cutting near the jet exit, depends on the operating conditions. Design of experiments and analysis of variance were used to determine the effect of cutting parameters on kerf characteristics and to develop empirical models for kerf profile and features of the three distinct macroscopic regions. Cutting front analysis revealed that the mechanisms of material removal in AWJ machining of Gr/Ep do not change over the jet penetration depth. In general, high quality uniform cuts may be obtained by minimizing initial damage at the jet ...
To assess the malignant potential of small({<=}15mm) portal defects seen on CT arterial portography, the findings of CT hepatic arteriography and lipiodol CT were reviewed. In 91 patients who underwent both CTAP and CTHA, small portal defects were reviewed for frequency, multiplicity and location. We prospectively evauluated changes in the size and enhancement pattern of malignant lesions on follow up CT according to density on CTHA, location, lipiodol deposits on lipiodol CT, and multiplicity. Among the 91 patients, 102 small defects were defected in 42 patients(46%). Small portal defects were benign, malignant, and of undetermined malignant potential in 77%, 20% and 3% of cases, respectively. Small portal defects that were hyperattenuated on CTHA, and lipiodol deposits on lipiodol CT, were malignant in 42% and 70% of cases, respectively. Location and ...
Congenital deformities involving the coverings of the nervous system are called neural tube defects (NTDs). NTD can be classified as neurulation defects, which occur by stage 12, and postneurulation...Full Text Available
Atrial septal defect closure is now routinely performed using a percutaneous approach under echocardiographic guidance. Centrally located, secundum defects are ideal for device closure but there is...Full Text Available
Familial defective apolipoprotein (apo) B-100 is a genetic disease that leads to hypercholesterolemia and to an increased serum concentration of low density lipoproteins that bind defectively to the...Full Text Available
To predict the fatigue life of fiber reinforced composites, fatigue process of CFRP laminates of [0 /90 ]{sub s} is investigated and the influence of damages occurring at fiber, matrix and fiber/matrix interface on the various critical strengths and the relationship between residual critical strength and failure are discussed. As a result, it was shown that fatigue strength (i.e. fatigue life) consisted of residual critical strength and stresses occurring at each layer (0 and 90 layers) and interlayer. Moreover, the fatigue failure occurred because the residual critical strength of each layer and interlayer decreased with dependence of their microdamage densities, so that the fatigue life can be predicted by evaluating microdamage behavior in fatigue process. (orig.) 14 refs.
A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are ...
A flutter-motion equation is presently derived for a 2D composite sandwich panel considering the total lateral displacement of the plate as the sum of the displacement due to bending of the plate, and that which is due to shear deformation at the core. The effects of core thickness and stacking sequence of the faces on the flutter boundary of the plate are discussed; it is shown that the sandwich panel greatly improves the flutter boundary over that of a composite laminate panel, provided it has sufficient core thickness.
Nondestructive inspection of carbon fibre-reinforced plastics (CRFP) using eddy current methods is based not only on the conductivity of the fibres. High frequencies (up to 10 MHz) give access to capacitive effects reflecting properties of the matrix. The paper presents a method using rotating eddy current probes to measure the anisotropic electrical properties. Potential applications of this method are the structural identification of laminates and the estimating of its degradation. (orig.)
Results of the evaluation of the scattered radiation effect on the image of defects in examined products are given. The formula is suggested which characterizes the image of defects on a scintillation screen as well as accumulation factors are calculated by the Monte-Carlo method. Values of fluctuations of absorbed energy in the screen used for the evaluation of sensitivity are experimentally obtained. The effect of high-energy bremsstrahlung on the defect detection is analyzed.
It is suggested that the large reduction of the superconducting transition temperature Tc due to defects observed experimentally in some A-15 compounds is caused by smearing of a high peak in the density of states at the Fermi level. The influence of defects on other physical properties (the magnetic susceptibility ?, the elastic modulus Cs, the structural transformation temperature Tm and the electrical resistivity ?) is also discussed from the same point of view. We expect the anomalous temperature dependence of ?, Cs and ? will be suppressed by defects.
We prove the existence of defective secant varieties of three-factor and four-factor Segre-Veronese varieties embedded in certain multi-degree. These defective secant varieties were previously unknown and are of importance in the classification of defective secant varieties of Segre-Veronese varieties with three or more factors.
In scattering of channeled particles by point defects and in emission of gamma rays in the spontaneous-radiation spectral region conditions are attained where the momentum transferred to the defect is taken up by the crystal as a whole. This leads to coherent and interference effects in the radiation from the crystal defects. When the longitudinal momentum transferred is zero, an induced radiation effect appears in the transitions between the states of transverse motion.
This paper deals with surface defects of automobile outer panels, which alter significantly the vehicle quality. Such defects occur during springback, after forming or flanging steps, and are characterized by concave depression of small amplitude over the convex shape of the part. The aim of this work is to reproduce at the laboratory scale a surface defect that occurs after flanging on a geometry similar to a door upper corner. A dedicated device has been designed in order to generate small size surface defects during flanging of metallic thin sheets. The outer surface of the sample was digitalized and the spatial geometry of the defect was evaluated from curvature change along 2D profiles. This study shows that the flanging height does not influence significantly the surface defect geome...
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...
A deep band of {l_brace}311{r_brace} defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the {l_brace}311{r_brace}-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The {l_brace}311{r_brace} defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the {l_brace}311{r_brace}-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.
A deep band of #left brace#311#right brace# defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the #left brace#311#right brace#-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The #left brace#311#right brace# defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the #left brace#311#right brace#-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...
Abstract We have experimentally and theoretically investigated the equivalent magnetic noise in a magnetoelectric Metglas/ 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 laminate sensor unit by considering the constituent noise sources of dielectric loss (NDE) and DC leakage resistance (NR). In the low frequency range (f = 1 Hz), theory predicts that NR dominates the noise charge (1.6 times larger than NDE), with a 1 Hz noise of 9.1\\;{\\rm pt}/\\sqrt {\\rm Hz}. The experimental equivalent magnetic noise was 10.8\\;{\\rm pt}/\\sqrt {\\rm Hz}. This observed value is slightly higher than the predicted one, which might be due to an oversimplification of the theoretical model in terms of electrical charge amplifier and external vibration noise sources. ( 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
This invention relates to the production method of composite electrode substrate for fuel cell. An impermeable material is used for edge sealant. The sealant is put in the clearance between two electrodes consisting of porous carbon material via thermoplastic resin sheet, and heated while being pressed. This production method increases the adherence between the porous carbon bodies and reduces the contact resistivity at the joint interface. Consequently, it becomes possible to produce the composite electrode for fuel cell without separator, resulting in simplification of assembly work, weight reduction, and downsizing. The preferable porous carbon body is made from shrinkage-treated fiber. After sheet forming, the thermosetting resin is impregnated, and then it is burnt to carbonization. Or mixed sheet of rayon and acrylic fiber is laminated to be heated and pressed without impregnating the resin. The pressed resin is then burnt to carbonization. The preferable ...
The results of an investigation into the behavior of adhesively bonded doubler splices of two composite material sandwich panels are presented. The splices are studied from three approaches: analytical; numerical (finite elements); and experimental. Several parameters that characterize the splice are developed to determine their influence upon joint strength. These parameters are: doubler overlap length; core stiffness; laminate bending stiffness; the size of the gap between the spliced sandwich panels; and room and elevated temperatures. Similarities and contrasts between these splices and the physically similar single and double lap joints are discussed. The results of this investigation suggest several possible approaches to improving the strength of the sandwich splices.
The development of Callossobruchus chinensis (L.) in different packaging materials were conducted with gram and lentil seeds under control temperature. The highest population rise was recorded in laminated jute bags and the weight loss of gram increased with the increase of the number of insects. A doses of 0.1 kGy inhibit all metamorphic stages of the beetle. The use of appropriate packaging materials can reduce the risk of re infestation in the post-irradiated food items. 9 refs., 1 fig., 2 tables (author).
Presented are the results of the investigation of the kinetics and micromechanism of the failure in impact bending of oriented-crystallized specimens having the eutectic composition Ni_3Al-Ni_3Nb and of the bimetal composed of 45 steel + M3 copper. The failure kinetics was studied by high-speed filming, whereas the fractures were studied by electron fractography. The particularities of the failure of the laminar-type composite materials were found. Analyzed was the effect of the kinetic factors and the mechanism of failure upon its energy consumption.
This study was designed to evaluate the suitability of a novel bioabsorbable material in treating bone defects. A poly(desaminotyrosyl-tyrosine-ethyl ester carbonate) (PDTE carbonate) membrane (thickness...Full Text Available
Strategies to combine aspirated marrow cells with scaffolds to treat connective tissue defects are gaining increasing clinical attention and use. In situations such as large defects where initial...Full Text Available
The federating theme of superconductivity has given rise to a number of experimental studies of point defects in solids as different as transition metals (V, Nb, ...), A-15 compounds (V{sub 3}Si, Nb{sub 3}Ge, ...), or perovskite-like copper oxides. Some of these experiments are presented here. (orig.).
The federating theme of superconductivity has given rise to a number of experimental studies of point defects in solids as different as transition metals (V, Nb, ...), A-15 compounds (V_3Si, Nb_3Ge, ...), or perovskite-like copper oxides. Some of these experiments are presented here. (orig.).
We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {l_brace}1 1 3{r_brace}s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of {l_brace}1 1 3{r_brace} defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low ...
We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, #left brace#1 1 3#right brace#s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of #left brace#1 1 3#right brace# defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ...
Most superconductors are quite sensitive to irradiation defects. Critical temperatures may be depressed, critical currents may be increased, by irradiation, but other behaviours may be encountered. In compounds, the sublattice in which defects are created is of significant importance. 24 refs.
ObjectivesIn 2003, the Omani Ministry of Health Child Health Care Program initiated a national Birth Defects (BD) Register. This paper reviews the magnitude and risk factors of birth...Full Text Available
This talk sketches out the main parameters (technology, circuit design) that have an influence on the hardening of digital CMOS integrated circuits. For each technology the more common defects are mentioned. General design rules are proposed to prevent or limit those defects. (D.L.). 2 refs., 2 figs.
Over the past two decades, combined advances in genetics, developmental biology and biochemistry have transformed the study of human birth defects. This review describes the importance of genome architecture,...Full Text Available
This report documents the collaborative effort between the United States and Canada to investigate the impact of process-induced defects on strength and stiffness under static and fatigue loading and for low-cost composite aircraft structures, in particul...
A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si{sup +} implant conditions have been considered. TEM analysis for the highest energy/dose shows that {l_brace}1 1 3{r_brace} defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, {l_brace}1 1 3{r_brace} defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for interstitials. ...
A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si"+ implant conditions have been considered. TEM analysis for the highest energy/dose shows that #left brace#1 1 3#right brace# defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, #left brace#1 1 3#right brace# defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for ...
Generation of replicative defective viruses is frequently observed during viral infections. We now report that encapsidation and reverse transcription of spliced viral RNA is an additional mechanism...Full Text Available
Different tombusviruses were able to support the replication of either homologous or heterologous defective interfering (DI) RNAs, and those infected plants usually developed typical attenuated symptoms....Full Text Available
Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.
It is suggested that the large reduction of the superconducting transition temperature T sub(c) due to defects observed experimentally in some A-15 compounds is caused by smearing of a high peak in the density of states at the Fermi level. The influence of defects on other physical properties (the magnetic susceptibility chi, the elastic modulus C sub(s), the structural transformation temperature T sub(m) and the electrical resistivity rho) is also discussed from the same point of view. We expect the anomalous temperature dependence of chi C sub(s) and rho will be suppressed by defects. (auth.).
We show that in the Landau gauge of the SU(2) Yang-Mills theory the residual global symmetry supports existence of the topological vortices which resemble disclination defects in the nematic liquid crystals and the Alice (half-quantum) vortices in the superfluid heluim 3 in the A-phase. The theory also possesses half-integer and integer charged monopoles which are analogous to the point-like defects in the nematic crystal and in the liquid helium. We argue that the deconfinement phase transition in the Yang-Mills theory in the Landau gauge is associated with the proliferation of these vortices and/or monopoles. The disorder caused by these defects is suggested to be responsible for the confinement of quarks in the low-temperature phase.
The electronic structure of the clusters (V/sub 3/Si/sub 4/)/sup 12 -/, (Nb/sub 3/Sn/sub 4/)/sup 12 -/(Mo/sub 3/Ge/sub 4/)/sup 15 -/ in crystalline V/sub 3/Si, Nb/sub 3/Sn, Mo/sub 3/Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered.
The electronic structure of the clusters [V_3Si_4]"1"2"-, [Nb_3Sn_4]"1"2"-[Mo_3Ge_4]"1"5"- in crystalline V_3Si, Nb_3Sn, Mo_3Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered. (author).
This paper describes detection of electro-discharged machine (EDM) defects in magnetic steam generator (SG) tubes of Monju fast breeder reactor (FBR). The EDM defects are located under support plate (SP), on the outer tube surface and they are detected by a remote field eddy current probe. Using the experimental measurements and a multi frequency algorithm, the defect signal can be extracted from the SP signal. The parameters of the multi-frequency algorithm were calculated by comparing SP measurements with two-dimensional finite element simulations (FEM). (author)
Measurements of the temperature dependence of the electrical resistivity and correlations observed with T/sub c/ for V_3Si, V_3Ge, and A-15 Nb-Ge show (i) the existence of a universal defect in the A-15 superconductors which is not nonstoichiometry, (ii) a normal state anomaly also strongly influenced by the defects, and (iii) evidence that T/sub c/ and the electron-phonon interactions for transport processes are approx.100 times more sensitive to defect producing sample modifications in the A-15 compounds than in Nb.
This paper describes various eddy current probes, and their performance, which were developed at the Chalk River Laboratories of Atomic Energy of Canada. Included are probes for detecting defects at tubesheet regions in heat exchanger tubes, defects at expansion-transition regions in finned tubes, and defects in ferromagnetic tubes. All of these probes can be used with conventional commercially available instruments. (author).
Ventricular septal defect after acute myocardial infarction (AMI) is a complication associated with poor outcome in the absence of intervention. We report a case of successful TEE guided transcatheter closure of a post myocardial infarction (MI) ventricular septal defect (VSD) with an Amplatzer occluder in a 79 years old male with cardiogenic shock.
We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.
The defect-induced effect on superconducting transition temperature T_c of A-15 compounds is examined. T_c is found from the Eliashberg equations which take into account the defect-induced changes in the electron-phonon spectral function and electron density of states. The dependence of T_c on the defect type in the superconductor is obtained.
It is shown that low-frequency elastic vibrations of near-surface planar defects cause high-frequency ultrasonic radiation in surrounding air. The frequency conversion mechanism is concerned with contact nonlinearity of the defect vibrations and provides efficient generation of air-coupled higher-order ultraharmonics, ultrasubharmonics, and combination frequencies. The nonlinear air-coupled ultrasonic emission is applied for location and high-resolution imaging of damage-induced defects in a variety of solid materials.
Radionuclide (R) sorption from a solution (vapor) by freshly formed crystals with production of substitution solid solutions under different types of self-disordering is studied. Changes of self-defectiveness and macrodefectiveness with time and effect of radiation defects in the presence of P macroquantities are taken into account. An analysis for monodispersed sorbents is performed. It is shown that the achievement of equilibrium within a reasonable time in impurity-solid phase system depends on defectiveness which ensures a required level of the coefficient of impurity diffusion in sorbent crystals.
Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.
The defect-induced electron lifetime and energy-gap anisotropy effects on the T/sub c/ of the A-15 compounds are examined. A self-consistent model calculation demonstrates that the various defect dependences of T/sub c/ can be qualitatively understood in terms of the electron-lifetime effect.
The defect-induced electron lifetime and energy-gap anisotropy effects on the T/sub c/ of the A-15 compounds are examined. A self-consistent model calculation demonstrates that the various defect dependences of T/sub c/ can be qualitatively understood in terms of the electron-lifetime effect.
Surveillance of a population, such as a weapon stockpile, is needed to discover manufacturing defects as well as deterioration as the population ages. This article considers the risks of sampling rates for surveillance from three perspectives: detection probability of defects in a proportion of a population with pass/fail data, detection of a trend in a defective proportion of the population with pass/fail data, and detection of a trend with quantitative degradation measurements. Understanding of these risks will help the decision maker choose a sampling rate to protect against such problems of a specified size at a tolerable risk.
We suggest and study designed defects in an otherwise periodic potential modulation of a two-dimensional electron gas as an alternative approach to electron spin based quantum information processing in the solid-state using conventional gate-defined quantum dots. We calculate the band structure and density of states for a periodic potential modulation, referred to as an antidot lattice, and find that localized states appear, when designed defects are introduced in the lattice. Such defect states may form the building blocks for quantum computing in a large antidot lattice, allowing for coherent electron transport between distant defect states in the lattice, and for a tunnel coupling of neighboring defect states with corresponding electrostatically controllable exchange coupling between different electron spins.
We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.
We compare the effect of isotropic point defects vis a vis extended defects on the inter and intra grain properties of superconducting MgB{sub 2} thin films. In a recent paper Gandikota et al. [Appl. Phys. Lett. 86 (2005) 012508] reported that after 200 MeV {alpha} particle irradiation intergrain connectivity remains unaffected. Our results on the contrary indicate that connectivity does depend on irradiation dose and type of ions used. We ascertain that extended defects alter the {sigma} band properties of this two-band superconductor more effectively than the point defects. The improvement in upper critical field and critical current density is intricately related to the type and density of defects created.
We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas (2DEG) at a semiconductor heterostructure. Calculations of the band structure of a periodic antidot lattice are presented. A point defect is created by removing a single antidot, and calculations show that localized states form within the defect, with an energy structure which is robust against thermal dephasing. The exchange coupling between two electrons residing in two tunnel-coupled defect states is calculated numerically. We find results reminiscent of double quantum dot structures, indicating that the suggested structure is a feasible physical implementation of spin qubits.
Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of ...
In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR ...
In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a ...
We have investigated the correlation between V-shaped defect formation and the optical properties of AlGaN/(In)GaN multiple quantum wells (MQWs) grown under different growth conditions and then demonstrated the characteristics of fabricated ultraviolet (UV) light emitting diodes (LEDs). From the temperature-dependent photoluminescence (PL) measurement, the internal quantum efficiency for 300 K was obtained as 43.6% for a sample with a low density of V-defects in a MQW and 13.7% for a sample with a high density of V-defects. The carrier lifetime based on the time resolved PL measurement at room temperature was 0.32 ns for a sample with a high density of V-defects and 1.26 ns for a sample with a low density of V-defects. And we also found that the density of V-defects affected the external quantum efficiency and wall plug efficiency of the fabricated UV LEDs. ...
A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an ...
A magnetic measuring technique, which sorts out defects according to a distribution function n, was used to study the influence of electron irradiation on 50-50 NiFe. The distribution function is determined in terms of the maximum force f/subm/ that a defect can exert on a forward moving domain wall, or equivalently, the range z_0, which is the distance the mean position of the wall may move past the defect before the wall snaps free from the pinning action of the defect. The range and maximum force are related by a spring constant k, viz., f/subm/=kz_0. The quantity n (z_0) dz_0 gives the number of defects per unit volume having a range between z_0 and z_0+dz_0. Distribution functions were determined before and after electron irradiation. The irradiation was for 100 min with 18-MeV electrons with a dose of 1.1times10"1"7 e/cm"2. Following irradiation, there was a substantial ...
In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate ...
A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration ...
A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second ...
(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including ...
(001) CZ silicon wafers were implanted with arsenic (As"+) at energies of 10--50 keV to doses of 2 x 10"1"4 to 5 x 10"1"5/cm"2. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point ...
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...
Phenolic resins have made a major breakthrough in the field of high technology in 80's. These are now active participants of "high tech' areas ranging from electronics, computers, communication, outer space, aerospace, advanced materials, bio materials and technology. A phenol - formaldehyde (1:1.5) resin having resin content of 70% synthesized in the laboratory has been applied for wood coating and reinforcing glass fiber. The weatherability and solvent resistance of these items have been studied and results discussed keeping in view the envisaged application for structural materials and chemical equipment. The toxic materials released during contact with solvents for chemical applications and during degradation general have been monitored. The results are discussed with reference to environmental pollution due to these resins and their composites under different conditions. (authors)
This paper reports on a series of laboratory and controlled test site measurements of the thermal conductivity of polyisocyanurate foam laminated boardstock roof insulations produced with several different blowing agents; CFC-11, HCFC-123, HCFC-14lb, and two blends of the HCFCs. The behavior of the experimental foams with HCFCs is compared to that of conventional polyisocyanurate foam blown with CFC-11. Thermal drift observed from two years of field exposure is compared to laboratory accelerated aging tests and the laboratory and field measurement techniques are described. This work is part of a Joint Industry/Government Project established in the United States to evaluate the technical viability of HCFC alternative blowing agents for polyisocyanurate foam roof insulations.
The influence of electron-beam irradiation on mechanical properties of commercial multilayer flexible packaging materials based on coextruded and laminated polypropylene (PP), low-density polyethylene (LDPE), ethylene vinyl alcohol copolymer (EVOH) and poly(ethylene terephthalate) (PET), irradiated with doses up to 120 kGy, was studied. The tensile strength and elongation at break of the irradiated PET/PP film increase, while the penetration and sealing resistance decreased. In addition, the irradiated PET/LDPE/EVOH/LDPE film presented increase in the tensile strength on some radiation doses and decrease of the penetration and sealing resistance, except for sealing resistance at radiation dose of 15 kGy that resulted in a slight increase of ca 4%.
We discuss geochemical and sedimentological characteristics of 12 tephra layers, intercalated within the finely laminated sediments of Lake Van. Within the about 15 kyr long sediment record studied, volcanic activity concentrated in the periods 2.6-7.2 and 11.9-12.9 kyr B.P. Concentrations of 25 elements provide the geochemical fingerprint of each tephra layer and allow comparison to literature values of potential source volcanoes such as Mts. Nemrut and Suephan. The youngest two tephra layers (and probably also the other three ashes from the 2.6-7.2 kyr B.P. eruptions) originate from the Nemrut volcano. The source of the older tephra (11.9-12.9 kyr B.P.), however, remains unidentified.
Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.
At the importance increase of UT (ultrasonic testing) with the application of rules on fitness-for-service for nuclear power plants, JAPEIC (Japan power engineering and inspection corporation) started education training for defect detection and sizing technique. Weld joints specimen with EDM (Electro-Discharged Machining) notches, fatigue cracks and intergranular stress corrosion cracks were tested and practiced repeatedly based on a modified ultrasonic method and the defect size measuring accuracy of the trainees was surely improved. Results of the blind test confirmed effectiveness of education training. (T. Tanaka)
While bone metastases producing photon deficient defects on bone scintigraphy have previously been reported, this finding has not been emphasized for hepatocellular carcinoma (HCC). Furthermore, ''filling-in'' of such photon deficient defects with 67Ga at skeletal sites of metastatic HCC has not been described. In this case report, the combination of a photon deficient defect on bone scintigraphy and avid accumulation of 67Ga in this same area was of value in confirming the diagnosis of metastatic HCC.
In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.
A finite three-dimensional layer-by-layer photonic crystal with planar defects in a layer is shown to drastically modify the spontaneous emission rate of an embedded dipole. Finite-difference time-domain calculations with one quarter symmetric boundary condition and perfectly matched layer demonstrate the strong enhancement effects induced by the cavity resonance of defect modes and band-edge resonant modes. Simulation shows that the emission spectra are quite different when the position or polarization of the dipole is changed. Moreover, the extraction efficiency is calculated to observe the percentage of light leakage through a substrate.
Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.
The transformation of Pd/Si to Pd{sub 2}Si/Si is investigated using depth-resolved positron annihilation, x-ray diffraction and Auger electron spectroscopy studies. The observed defect-sensitive positron S-parameter value of 1.022-1.054 indicates the existence of divacancies across the silicide/silicon interface and Si substrate region. Our experimental observation of vacancy defects is consistent with the model proposed for excess vacancy generation across the interface consequent to Si diffusion. (letter to the editor)
ObjectivesObjectives Not AvailableDescriptionTo determine the effects of water penetration on the burst strength of filament wound composite pipes which have been damaged by impact and then subjected to long term pressurisation with sea water. ~%~ To monitor and characterise the damage and effects of sea water penetration using ultrasonic NDT. To determine the burst strength of bonded composite pipe joints with and without defects and to see whether the defects can be detected using ultrasonic NDT. [continued...
The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well
This study presents results from Monte Carlo radiation transport calculations aimed at characterizing a novel methodology being developed to detect partial defects in Pressurized Water Reactor (PWR) spent fuel assemblies (SFAs). The methodology uses a combination of measured neutron and gamma fields inside a spent fuel assembly in an in-situ condition where no movement of the fuel assembly is required. Previous studies performed on single isolated assemblies resulted in a unique base signature that would change when some of the fuel in the assembly is replaced with dummy fuel. These studies indicate that this signature is still valid in the in-situ condition enhancing the prospect of building a practical tool, Partial Defect Detector (PDET), which can be used in the field for partial defect detection.
... stenosis. It looks from the transesophageal and the 3-D echo that most of the problem is really ... posterior leaflet, which you can see on the 3-D echo image is a major source. The anterior ...
Defect cluster formation in 14-MeV neutron irradiated polycrystalline copper has been observed by transmission electron microscopy (TEM) and correlated with the increase in yield stress. The measurements indicate that the radiation hardening component of the yield strength in polycrystals is not directly additive to the unirradiated yield strength. A transitional behavior was observed for radiation hardening at low fluences, which produces an anomalous variation of the defect cluster barrier strength with fluence. The behavior is attributed to the effect of grain boundaries on slip band transmission. An upper limit for the room temperature barrier strength of defect clusters in neutron-irradiated copper was determined to be #alpha#=0.23. (orig.).
This paper introduces the application of independent component analysis mixture modelling (ICAMM) in non-destructive testing (NDT). The application consists of discriminating patterns for material quality control from homogeneous and defective materials inspected by impact-echo testing. This problem is modelled as a mixture of independent component analysis (ICA) models, representing a class of defective or homogeneous material by an ICA model whose parameters are learned from the impact-echo signal spectrum. These parameters define a kind of particular signature for the different defects. The proposed procedure is intended to exploit to the maximum the information obtained with the cost efficiency of only a single impact. To illustrate this capability, four levels of classification detail...
The influence of common welding defects such as internal under-cut, incomplete penetration of the root bead, internal concavity and hollow bead have been evaluated in a sour environment. Tests were performed on samples cut from actual pipeline welds. The individual defects were subjected to slow strain rate testing. The samples were then examined by metallography, scanning electron microscopy, and hardness testing. It was established that a threshold stress intensity exists for sulphide stress cracking. The test results were compared to those obtained from samples of the weld and pipe which did not contain any defects. This comparison indicated that the metallurgical variations associated with the presence of a weld are the main factor for sulphide stress cracking rather than any specific defects or geometry. 5 tabs., 9 figs.
The tetrapeptide KDEL is commonly found at the C terminus of soluble proteins of the endoplasmic reticulum (ER), and it contributes to their localization by interacting with a receptor that recycles...Full Text Available
Giant magnetoresistance (GMR) has been used with Eddy current testing to detect small defects not only in thin film structures but also in multilayered metallic structures. This work detected small scratches in the thin film under the surface where these defects were unable to be inspected or monitored by regular testing. In addition, rotational GMR magnetic sensor based Eddy current probes were used for detecting buried corner cracks at the edge of holes in metallic structures. The results of this study proved that giant magnetoresistance is very powerful and effective to sense the magnetic field, which is the result from the perturbation of the Eddy currents caused by a defect. This method can be used for quality control of metallization layers on silicon wafer and to detect cracks in thick structures such as cracks in aging aircraft.
The location of defective LMFBR fuel pins by the determination of gas tag isotopic ratios is discussed. The application of this method to the FFTF Reactor briefly described.
Mutation of the gene drop-dead (drd) causes adult Drosophila to die within 2 weeks of eclosion and is associated with reduced rates of defecation...Full Text Available
Glycine is a major inhibitory neurotransmitter in the spinal cord and brainstem. Recently, in vivo analysis of glycinergic synaptic transmission has been pursued in zebrafish using...Full Text Available
To study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.
diet and genetic obesity metabolic defects and inflammation. To determine the role of adipocyte death in promoting adipose tissue inflammation and insulin resistance in animal...
Ultrasonic and eddy-current techniques are used to automatically examine large diameter tubular products during their production for defective areas and out-of-tolerance conditions.
The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.
The techniques in order to measure the depth of defect in weldment and structure accurately have been developed. Many researches have made efforts to develop the methods for the accurate depth sizing of defect. TOFD is known as the most accurate method of various methods for measuring depth sizing. However, there is a possibility to miss defects because of the limitation of beam coverage for the ultrasound incident angle. In this study, the results for detectability and depth sizing using phased array ultrasonic technique for thick body were compared with those of conventional TOFD technique. It was experimentally confirmed that the phased array ultrasonic TOFD technique gives good detectability and accurate depth measurement for the various types of defects. The phased array ultrasonic TOFD technique developed in this study will contribute to increase the inspection reliability in thick component such ...
Studies were made on different types of packaging materials used for packing dried fish in the Philippines with a view to finding a suitable packaging material for irradiated dried fish. Among these packaging materials (polyethylene, cello/polyethylene, polyester/polyethylene, Kraft paper, polypropylene and interwoven polypropylene sacks), polyester/polyethylene laminate was the most resistant material against penetration by Dermestes carnivorous. No insect damage occurred on the dried fish packed in interwoven polypropylene lined with polyester/polyethylene laminate. The cost per sack of such packaging material having a capacity of 50-80 kg is US$ 0.50. The sack lined with polyester/polyethylene proved to be durable for surface transportation from Bacolod City to Manila (approx. 360 miles). Radiation treatment at 225 krad was effective against bacterial contamination but not effective in inhibiting mould growth. Raw fish soaked in 25% salt for ...
Approximately 700m of deep water clastic deposits of Mt. Messenger Formation are superbly exposed along the Taranaki coast of North Island, New Zealand. Biostratigraphy indicates the interval was deposited during the time span 10.5-9.2m.y. in water depths grading upward from lower bathyal to middle-upper bathyal. This interval is considered part of a 3rd order depositional sequence deposited under conditions of fluctuating relative sea-level, concomitant with high sedimentation rates. Several 4th order depositional sequences, reflecting successive sea-level falls, are recognized within the interval. Sequence boundaries display a range of erosive morphologies from metre-wide canyons to scours several hundred metres across. All components of a generic lowstand systems tract--basin floor fan, channel-levee complex and progading complex--are present in logical and temporal order. They are repetitive through the interval, with the relatively shallower-water components becoming more ...
BackgroundThe Mre11/Rad50/Nbs1 (MRN) complex is a regulator of cell cycle checkpoints and DNA repair. Defects in MRN can lead to defective S-phase arrest when cells are damaged....Full Text Available
Vibrio cholerae 638 (El Tor, Ogawa), a new CTXΦ-negative hemagglutinin/protease-defective strain that is a cholera vaccine candidate, was examined for safety and immunogenicity...Full Text Available
Photonic band gap structures with single or multiple defects show potential for use in single-beam and multi-beam klystrons and particle accelerators. The primary concerns are the coupling between the modes at each individual defect site and the damping of unwanted higher order modes. A conceptual design of a PBG based, multi-beam klystron and methods to damp HOMs and to cool and tune the structure are presented.
Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).
Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare ...
Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are ...
The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).
The exafs method is proposed as a more informative, universal one to investigate the radiation defects in solids. The successful results as obtained by the author using the synchrotron radiation source are reported for the first time. The measurements were carried out in GaAsP crystals irradiated with 50 MeV electrons.
Results on defect structure study and degree of molybdenum radiation hardening irradiated by fission neutrons and medium energy alpha-particles are presented. It is shown that molybdenum irradiation by alpha-particles and neutrons leads to different degree of material hardening for the same damage level. It is established that molybdenum radiation hardening is mainly defined by radiation defect clusters visible in electron microscope whose coefficient of rigidity depends on their size. 5 refs.; 6 figs.; 2 tabs. (author).
We derive the expression for spontaneous emission rate in finite one-dimensional photonic crystal with arbitrary defects using the effective resonator model to describe electromagnetic field distributions in the structure. We obtain explicit formulas for contributions of different types of modes, i.e. radiation, substrate and guided modes. Formal calculations are illustrated with a few numerical examples, which demonstrate that the application of effective resonator model simplifies interpretation of results.
Temperature-sensitive mutants defective in 60S ribosomal subunit protein L16 of Saccharomyces cerevisiae were isolated through hydroxylamine mutagenesis of the RPL16B gene and plasmid shuffling. Two...Full Text Available
The bioenergetic capacity of skeletal muscle in a 17-year-old patient with a severe defect in complex III of the electron transport chain has been examined by 31P NMR measurements of the molar ratio...Full Text Available
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational ...
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational ...
There are currently no accepted industry standards for the tensile strain limits of girth welds. This paper investigated the behavior of girth welds with buried defects subjected to high longitudinal strains caused by soil movement. A strain design methodology based on a crack driving method was used to examine the factors influencing stain limits along with a constraint-sensitive fracture mechanics approach. No strength undermatching was used in the welds, and the defect location had no influence on crack driving force. The weld joint was assumed to have uniform tensile properties. A 3D finite element (FE) model was used to simulate pipe behavior. Symmetric boundary conditions were imposed on the symmetry planes, and uniform remote axial displacement was applied as the primary loading. Automated data processing routines were developed to extract and analyze the data. The crack driving force was computed directly from a crack tip deformation ...
Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several ...
Computer programs have been written to allow the analysis of different types of eddy-current probes and their performance under different steam generators test conditions. The probe types include the differential bobbin probe, the absolute bobbin probe, the pancake probe and the reflection probe. The generator test conditions include tube supports, copper deposits, magnetite deposits, denting, wastage, pitting, cracking, and intergranular attack. These studies are based mostly on computed values, with the limited number of test specimens available used to verify the computed results. The instrument readings were computed for a complete matrix of the different test conditions, and then the test conditions determined as a function of the readings by a least-squares technique. A comparison was made of the errors in fit and instrument drift for the different probe types. The computations of the change in instrument reading due to the defects have led to an inversion ...
In the present paper we estimate the effect of sodium in the in-service inspection of non-magnetic steam generators tubes using eddy current technique and eddy current probes based on a differential double bobbin coil configuration. Experimental measurements of defects signals in steam generator tubes of fast breeder reactor are compared with simulations results of a two-dimensional axisymmetric finite element code to validate a reliable electromagnetic model of the system (eddy current coils, steam generator tube, defect) when there is no sodium on the outer steam generator tube surface. The electromagnetic code is used to evaluate the sodium band and sodium layer signals when a defect is located under steam generator support plate. Using a multi-frequency algorithm, its parameters are determined in the 'no sodium condition' (there is no sodium on the outer steam generator tube surface), defects signal ...
A series of nine model ferritic alloys were ion irradiated at #propor to#300 C using 2.5 MeV He ions to a dose of 1.4 x 10"2"1 ion/m"2, which corresponds to #propor to#0.1 dpa at a depth of 2 #mu#m and #propor to#3.5 dpa at the peak damage region which occurs at about 4 #mu#m deep. The resultant changes in hardness as a function of depth were measured using a Nanoindenter "t"r"a"d"e"m"a"r"k. TEM was used to investigate the defect distributions. The effect of various solutes, Cu and N in particular, but Mn and Ti as well, on the change of hardness and the defect distribution due to the ion irradiation are discussed. (orig.).
Ventricular septal defects can occur as part of other congenital cardiac malformations or as an isolated finding. Aneurysms of the sinus of Valsalva are rare, most commonly involving the right or noncoronary sinuses. They can be congenital or acquired through infection, trauma, or degenerative diseases. They frequently co-exist with ventricular septal defects, aortic valve dysfunction, or other cardiac abnormalities. More commonly, sinus of Valsalva aneurysms are diagnosed after the clinical sequelae of rupture. Several etiologic factors may lead to the development of pathologic pericardial effusion and the detection of pericardial effusion was one of the first applications of echocardiography to gain widespread acceptance. We present a case of a chance finding of an aneurysm of the right ...
Until a decade ago, only the differential bobbin type eddy current probe was considered necessary for reliable heat exchanger tube inspection. The introduction of different tube materials, manufacturing processes and a variety of service induced failures has greatly increased the demands of eddy current testing. Optimized probe designs enhanced by improved instrumentation can help satisfy some of these demands. Some of the more difficult inspection problems are detection of circumferential cracks, fretting wear under non-ferromagnetic support plates and shallow internal defects. Reliable detection and sizing of such defects is often made more difficult by the fact they frequently occur in defect prone regions such as under tubesheets or support plates and in transition regions of finned tubes. Probe designs effective in overcoming these difficulties exist. This paper describes a number of such probes and their performance.
We have developed a chitosan/polyglycolic acid (PGA) artificial nerve graft which was previously used for bridge implantation of dog sciatic nerves across 30-mm long defects. Here we describe a clinical trial of this graft for repairing a 35-mm-long median nerve defect at elbow of a human patient. During the 3-year follow-up period, functional recovery of the injured median nerve was assessed by pinch gauge test, hydraulic hand dynamometry, static two-point discrimination and touch test with monofilaments, in couple with electrophysiological examinations. The motor and sensory function of the median nerve demonstrated an ongoing recovery postimplantation, reaching M4 and S3+ levels during the follow-up period. The results indicate that the chitosan/PGA artificial nerve graft could be used ...
With steam generator check testing, the numerous types of defect not only have to be detected reliably but also to be identified correctly and classified according to depth. A priori, no signals are provided by the physical eddy-current mechanism, i.e. the disturbance of an excited eddy-current field by a defect, which will allow unambiguous identification and classification of the defects. The task, therefore, consists in designing the eddy-current method in terms of measurement technology in such a way as to obtain useful detection, identification and classification by a translation of the signals as simple and as save as possible. Internal through-flow wils and internal rotating probes were examined for their suitability to fulfill this three-pronged task with steam generator inspection.
With steam generator check testing, the numerous types of defect not only have to be detected reliably but also to be identified correctly and classified according to depth. A priori, no signals are provided by the physical eddy-current mechanism, i.e. the disturbance of an excited eddy-current field by a defect, which will allow unambiguous identification and classification of the defects. The task, therefore, consists in designing the eddy-current method in terms of measurement technology in such a way as to obtain useful detection, identification and classification by a translation of the signals as simple and as save as possible. Internal through-flow wils and internal rotating probes were examined for their suitability to fulfill this three-pronged task with steam generator inspection. (orig./RW).
The treatment of acetabular bone defects presents a great challenge in revision total hip arthroplasty (THA). The purpose of this study was to evaluate the clinical and radiological outcome of revision THA using jumbo cups for acetabular reconstruction after applying the bone-grafting technique. We studied 17?patients with acetabular defects ranging from Type 2A to Type 3A according to Paprosky`s classification. According to the AAOS-score twelve patients were classified as Type II and five patients as Type III. Uncemented press-fit cups with an outer diameter larger than 64?mm were used in all cases. Fifteen patients received morselized bone allografts. In eight patients an additional screw fixation was necessary. The mean follow-up period was 82?months (range 33?149). The mean Harris Hip...
It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.
The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.
The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.
The electrochemical performances of orthorhombic LiMnO{sub 2} compounds are analyzed in order to find a structural and/or morphological origin to the differences of electrochemical behaviours observed in compounds with different size of crystallites and different amounts of lattice defects. Energy capacity performances of 200 Ah/kg are reached for materials with crystallites of about 10{sup 7} Angstrom{sup 3} and with about 7% of defects, while energy capacities of only 80 Ah/kg are obtained for materials with ten times bigger crystallites. (J.S.) 3 refs.
Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the polymorphs'' of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes worm holes'' in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100[degrees]C lock in the mechanical twins.
Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the ``polymorphs`` of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes ``worm holes`` in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100{degrees}C lock in the mechanical twins.
The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.
The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.
Computer experiments imitating specimen strain on tension with constant deformation rate have been carried out. A formation possibility of atmosphere from defects around gliding dislocations (I) and a work of Frank-Read sources (II) have been accounted for. In result deformation curves until stresses do not exceed a critical shear stress were calculated. Influence of effects (I) and (II) was analyzed. It is determined that both by pass of dislocations over defect ''atmospheres'' and dislocation multiplication can cause a peak in flow stress occurrence on the deformation curves. Reasons and conditions of such peak occurrence have been studied. 12 refs.; 9 figs. (author).
Problems can sometimes occur during the construction of cast in-situ concrete piles. These foundations are formed by drilling a substantial hole into the ground and subsequently filling it with steel reinforcement and wet concrete. Several well-documented cases exist where concrete has not filled the hole and substantial voids have been left in the apparently completed pile. A theory has been developed by which it is possible to identify the nature, size and position of a finite defect within a suspect pile. The technique is based on the concept of receptances, and requires information obtained from vibration tests performed on piles after the concrete has hardened, and the nominal dimensions and material properties of the pile. The application of the theory is demonstrated using data relating to a pile with a known defect. The theory described in this paper ignores the effect of the surrounding soil; this can be included by further development ...
Two-dimensional simulations of the coarsening process of the isotropic/smectic-A phase transition are presented using a high-order Landau-de Gennes type free energy model. Defect annihilation laws for smectic disclinations, elementary dislocations, and total dislocation content are determined. The computed evolution of the orientational correlation length and disclination density is found to be in agreement with previous experimental observations showing that disclination interactions dominate the coarsening process. The mechanism of smectic disclination movement, limited by the absorption and emission of elementary dislocations, is found to be facilitated by curvature walls connecting interacting disclinations. At intermediate times in the coarsening process, split-core dislocation formation and interactions displaying an effective disclination quadrupole configuration are observed. This work provides the framework for further understanding of the formation and ...
A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).
Sinus lifting and reconstruction of localized alveolar defects are often required after closure of a large oroantral fistula (OAF) to allow for subsequent implant installation. This study describes a combined surgical technique that involves sinus lifting, bony closure, and reconstruction of the alveolar defect at the site of an OAF. The sinus membrane was reconstructed as a continuous layer by combining the residual sinus membrane with a rotated part of oral mucosa around the OAF. Autogenous bone from the chin and/or ramus was grafted into the prepared sinus space and alveolar defect, and the graft was covered by a buccal advancement flap. This technique was used to treat 8 patients who had large OAFs in the posterior maxillary region. The treatment was successful in all cases, and the te...
The magnetic hyperfine constants of the V sub(K) center in CaF_2, SrF_2 and BaF_2 have been calculated, assuming a phenomenological model, based on the F"-_2 'central molecule', to describe the wave function of the defect. The introduction of covalence with the ions neighboring the 'central molecule', has shown that this is a better description for the defect than a simple 'central molecule' model. It was also shown that the results for the hyperfine constants are strongly dependent on the relaxations of these neighboring ions, which have been determined by fitting the experimental data. The present results are compared with other previous calculations where similar and different methods have been used. A better description for the wave function of the defect is suggested. (author).
The tribo characteristics of self-lubricating 40-mm-bore ball bearings with a retainer of glass cloth-polytetrafluoroethylene (PTFE) laminate, which has elliptical pockets with a large pocket clearance, were tested under thrust loads at speeds up to 50,000 rpm, 2 million DN, in liquid hydrogen (LH2) and in liquid nitrogen (LN2). During testing, the bearing torque, outer-race temperature, and electric resistance between the inner and outer races were monitored to verify the formation and rupture of a PTFE transfer film. Testing showed that the bearings having the elliptical retainer pockets were superior to the conventional bearings with circular pockets. It was determined that, at the maximum inner race spinning velocity of about 5 m/s, a PTFE transfer film could sustain the maximum Hertz stress, up to about 2000 N/sq mm, in LH2, without severe film rupture resulting in bearing seizure. In LN2, the critical load capacity of PTFE transfer film with bearing seizure ...
Ionizing radiation, mainly in the form of #gamma#-rays from the radioisotope cobalt 60, is being used increasingly for the inactivation of contaminants in cosmetic and toiletry preparations. The treatment is applied to the product in its final pack, and therefore, it is important to recognize that the properties of the packaging materials could be affected, particularly if high radiation doses are used. The stability of a wide range of materials is discussed. The nature and extent of chemical and physical changes in plastics very much depends on the presence of antioxidants and other additives, and on the environmental conditions during irradiation. Some useful information is available from research into the use of radiation for the preservation of food - many films and laminates have been cleared for use in the United States. The low radiation doses used for the control of contaminants in cosmetic products are quite unlikely to cause changes in packaging materials ...
The durability of ball bearings, 32-mm- and 45-mm-bore, with a retainer or glass cloth-polytetrafluoroethylene (PTFE) laminate was tested under a high radial load at a speed of 20,000 rpm in LOX or LN2. The retainers were characterized as good self-lubricators because the abrasive glass-cloth fiber tips exposed on the retainer were chemicaly etched away with hydrofluoric acid (HF). During testing, the bearing-cartridge-acceleration was monitored to detect bearing damage. Testing in LOX for about 2.2 hr showed that excellent lubricating conditions were obtained for all bearings. Testing in LN2 for about 5.1 hr detected that the fatigue life of the bearing was about the same as the calculated B10 fatigue life. The HF chemical treatment resulted in a reacted fluoride-oxide material which remained in the etched part of the glass fiber. Several chemical products, particularly MgO, CaO, and CaCO3, enhanced adhesion of PTFE transfer film to the counterface, resulting in ...
A dipole magnet based on the common coil design, using prereacted Nb{sub 3}Sn superconductor, is under development at Fermilab, for a future Very Large Hadron Collider. This magnet has some innovative design and technological features such as single layer coils, a 22 mm wide 60-strand Rutherford type cable and stainless steel collars reinforced by horizontal bridges inserted between coil blocks. Both left and right coils are wound simultaneously into the collar structure and then impregnated with epoxy. In order to optimize the design and fabrication techniques an R&D program is underway. The production of cables with the required characteristics was shown possible. Collar laminations were produced, assembled and tested in order to check the effectiveness of the bridges and the validity of the mechanical design. A mechanical model consisting of a 165 mm long section of the magnet straight section was assembled and tested. This paper summarizes the status of ...
Kevlar 49/epoxy laminates often exhibit substantial material nonlinearity when subjected to bending. This is a consequence of the yeild-like behavior of a Kevlar 49/epoxy lamina in fiber-directed compression. In this paper, analyses that utilize a simple idealization of compressive yielding are described and calculated results for Kevlar 49 reinforced beams and rings are compared with available data. First, results of a finite element analysis of a thin, unidirectionally reinforced ring subjected to diametral compression are presented. This analysis uses beam elements that incorporate linear tensile and elastic-perfectly plastic compressive behavior. Then a method used to analyze quasi-isotropic beams tested in four-point bending is discussed. This finite element analysis uses a layered shell element with a lamina constitutive model that permits elastic-perfectly plastic response to fiber-directed compression, but otherwise assumes linear elastic behavior. ...
A lightweight, low permeability liner for graphite epoxy composite compressed gas storage vessels. The liner is composed of polymers that may or may not be coated with a thin layer of a low permeability material, such as silver, gold, or aluminum, deposited on a thin polymeric layer or substrate which is formed into a closed bladder using torispherical or near torispherical end caps, with or without bosses therein, about which a high strength to weight material, such as graphite epoxy composite shell, is formed to withstand the storage pressure forces. The polymeric substrate may be laminated on one or both sides with additional layers of polymeric film. The liner may be formed to a desired configuration using a dissolvable mandrel or by inflation techniques and the edges of the film seamed by heat sealing. The liner may be utilized in most any type of gas storage system, and is particularly applicable for hydrogen, gas mixtures, and oxygen used for vehicles, fuel ...
A lightweight, low permeability liner for graphite epoxy composite compressed gas storage vessels. The liner is composed of polymers that may or may not be coated with a thin layer of a low permeability material, such as silver, gold, or aluminum, deposited on a thin polymeric layer or substrate which is formed into a closed bladder using torispherical or near torispherical end caps, with or without bosses therein, about which a high strength to weight material, such as graphite epoxy composite shell, is formed to withstand the storage pressure forces. The polymeric substrate may be laminated on one or both sides with additional layers of polymeric film. The liner may be formed to a desired configuration using a dissolvable mandrel or by inflation techniques and the edges of the film seamed by heat sealing. The liner may be utilized in most any type of gas storage system, and is particularly applicable for hydrogen, gas mixtures, and oxygen used for vehicles, fuel ...
The effect of atmospheric pressure on tracking resistance of organic insulating materials were investigated in the range of 500 to 1007 hPa. The tracking resistance for Polycarbonate (PC), Modified Polyphenylene Oxide (M-PPO) and Paper Base Phenolic Resin Laminate (PL) increase with the decrease in atmospheric pressure. The scintillating discharges on these samples surface lead to the ignition. The tracking failure on these results from the ignition on the surface. For Polybutylene Terephthalate (PBT) and Polyethylene Terephthalate (PET), the tracking resistance decrease with the decrease in atmospheric pressure. The discharges observed on the these surface are the glow-like. The discharge area spreads on the surface between the electrodes at the lower pressure. The failure on this group results from the carbonization by the discharges on the surface. However, the tracking resistance for Unsaturated Polyester Resins (UP) has no significant dependence on lower ...
In the past, organic substance is generally deemed as electrical insulator, but in recent years, molecular crystals and polymers showing electroconductivity like metal were synthesized and even those showing superconductivity have appeared. These materials are called organic metals or synthetic metals and have peculiar solid state physical properties. Examples of real application of organic electroconductive materials are becoming available, but in this article, a chip type aluminum solid electrolytic capacitor using polypyrrole is introduced. There are four kinds of capacitors including ceramic capacitors and aluminum electrolytic capacitors, etc. The aluminum electrolytic capacitor is most retarded than any other type of capacitor in introducing its chip type since its use of electrolytic solution becomes an obstacle. Polypyrrole synthesized by electrolytic polymerization through anode oxidation of pyrrole has good stability and high electroconductivity. Introduction of the chip type ...
Comprehensive investigation has been made into the application of the polymerization hardening by radiation, particularly electron beam, to the composites of polymers and other materials. The report is divided into four parts, namely 1) characteristics and problems of the reaction of curing by radiation polymerization, 2) improvement of the bonding capability of high molecular weight materials, 3) bonding by radiation, and 4) composites made by the impregnation and polymerization hardening of monomers. The first part includes the effects of dose rate, temperature rise during the hardening, the peculiarity of electron beam irradiation at high dose rate, reaction environment and additive effects. Main conclusions are as follows: caution must be taken to the amount of residual double bonds because they affect the quality of hardened polymers; the polymerization hardening reaction at high dose rate cannot be analogized by that at low dose rate; and the presence of the inhibitors of radical ...
A multi-stage, multi-disk type seismic source was developed as a downhole seismic source. The seismic source is an improved version of the downhole seismic source of a system in which an elastic wave is generated by a weight accelerated by restitutive force of a spring striking the upper part of a laminated structure consisted of metal disks and elastic bodies installed in water in a well. Enhancing the vibration exciting efficiency requires impedance radiated from the disks to be increased. The multi-disk structure was adopted because of restrictions on the disk area under the limiting condition of being inside the well. Further limitation has still existed, which led to finally structuring the multi-disk type to a multi-stage construction to increase the radiated impedance. In order to increase average velocity on the radiation surface, mass relationship between the hammer and the anvil was sought so that the maximum velocity is achieved at the process of ...
Atypical hemolytic uremic syndrome (aHUS) is a heterogeneous disease that is caused by defective complement regulation in over 50% of cases. Mutations have been identified in genes encoding both complement...Full Text Available
Although recent data established that a specific very-long-chain fatty acyl-CoA synthetase is defective in X-linked adrenoleukodystrophy (ALD), the ALD gene is still unidentified. The ALD locus has...Full Text Available
Generally, neutron, ion and electron Irradiations cause a substantial amount of hardening and significantly alter the deformation behavior of metals and alloys at relatively low irradiation temperatures. A radiation hardening is caused by the formation of microstructural defects such as dislocation loops, voids and precipitates under irradiation. Therefore, it is important to have a better knowledge of the irradiation induced microstructural defects under irradiation condition. As a part of the National mid- and long-term atomic energy R and D program, we are dealing with the radiation hardening behavior in Fe-Cr binary alloy. Fe-Cr binary alloy is a base alloy of Ferritic/Martensitic steel(F/M steel) planning to use for the Gen IV nuclear system. In this work, we investigated the radiation hardening and microstructural defect evolution in ion irradiated Fe-Cr alloys with irradiation temperature using nano-indentation ...
Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results ...
Monogenic autoinflammatory diseases encompass a distinct and growing clinical entity of multisystem inflammatory diseases with known genetic defects in the innate immune system. The diseases...Full Text Available
Genetic defects in the dystrophin-associated protein complex (DAPC) are responsible for a variety of pathological conditions including muscular dystrophy, cardiomyopathy, and vasospasm. Conserved DAPC...Full Text Available
The Arabidopsis ref2 mutant was identified in a screen for plants having altered fluorescence under UV light. Characterization of the ref2 mutants showed that they...Full Text Available
Normal brain development requires a series of highly complex and interrelated steps. This process presents many opportunities for errors to occur, which could result in developmental defects...Full Text Available
Patients with Alport syndrome progressively lose renal function as a result of defective type IV collagen in their glomerular basement membrane. In mice lacking the α3 chain of type IV collagen...Full Text Available
A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the ...
We have recently reported that progeroid Zmpste24−/− mice, which exhibit multiple defects that phenocopy Hutchinson-Gilford progeria syndrome, show a profound dysregulation...Full Text Available
The properties of an atypical Brucella strain isolated from lymph node tissue of a cow slaughtered as a brucellosis reactor were examined. The organism was Gram negative and highly pleomorphic, existing...Full Text Available
Prenatal cocaine exposure produces sustained neurobehavioral and brain synaptic changes closely resembling those of animals with defective alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic...Full Text Available
Platelet-derived growth factor (PDGF) is a potent moderator of soft tissue repair through induction of the inflammatory phase of repair and subsequent enhanced collagen deposition. We examined the effect...Full Text Available
Osterix (Osx) is a zinc-finger-containing transcription factor that is expressed in osteoblasts of all endochondral and membranous bones. In Osx null ...Full Text Available
Cancer cells constantly adapt to oxidative phosphorylation (OXPHOS) suppression resulting from hypoxia or mitochondria defects. Under the OXPHOS suppression, AMP-activated protein kinase (AMPK) regulates...Full Text Available
Muscular dystrophies (MDs) comprise a group of degenerative muscle disorders characterized by progressive muscle wasting and often premature death. The primary defect common to most MDs involves disruption...Full Text Available
We report on the presentation and management of a patient with herniation of the rectum following a coccygectomy. We used an abdominal approach and careful pelvic dissection to define the defect in...Full Text Available
Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms ...
Ion implantation of Si (60 keV, 1x10"1"4/cm"2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1x10"1"8 and 1x10"1"9/cm"3. Following post-implantation annealing at 740 degree C for 15 min to allow agglomeration of the available interstitials into elongated #left brace#311#right brace# defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in #left brace#311#right brace# defects as a function of boron concentration, up to nearly complete disappearance of the #left brace#311#right brace# defects at boron concentrations of 1x10"1"9/cm"3. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, ...
Geometrically anisotropic eddy current probes are a type of separate function probes especially fit to the detection of defects showing a preferential direction. This kind of flaw induces a coupling between the transmitter and the receiver by guiding eddy currents from the one to the other. On the other hand, this coupling will be almost non-existent in the presence of defects or spurious effects not displaying this geometrical particularity. Basic studies on an elementary two-coil set-up allow the acknowledgment of the intrinsic qualities of such probes: good signal-to-noise ratio, influence field practically constant on the whole defect length, ability to detect bridged defects, insensitivity to lift off. These results can be improved by achieving multicoils probes adapted to different kinds of problems. An application to continuous casting slabs testing yields very interesting results in the ...
BackgroundA strong association between stress resistance and longevity in multicellular organisms has been established as many mutations that extend lifespan also show increased...Full Text Available
A brief review is given of the nature of lattice instabilities in high-T/sub c/ superconductors. The Frohlich instability in A-15 compounds is indicated to be a microdomain which acts as an embryo for the Martensitic transformations in these compounds.
We developed mice with germline endogenous expression of oncogenic Hras to study effects on development and mechanisms of tumor initiation. They had high perinatal mortality, abnormal...Full Text Available
The goal of this study was to evaluate topics used to troubleshoot circuit boards with known or suspected thermally intermittent components. Failure modes for thermally intermittent components are typically mechanical defects, such as cracks in solder paths or joints, or broken b...
Japanese medaka (Oryzias latipes) embryos exposed to ethanol have developed craniofacial, cardiovascular and skeletal defects which can be compared with the phenotypic features...Full Text Available
In rats, damage to neuronal populations in some brain regions occurs in response to neonatal alcohol exposure coinciding with the period of rapid brain growth. These alcohol-induced defects...Full Text Available
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.
mRNA is sequestered and turned over in cytoplasmic processing bodies (PBs), which are induced by various cellular stresses. Unexpectedly, in Saccharomyces cerevisiae, mutants of the...Full Text Available
Carney-Stratakis syndrome, an inherited condition predisposing affected individuals to gastrointestinal stromal tumor (GIST) and paraganglioma, is caused by germline mutations in succinate dehydrogenase...Full Text Available
Lymphocytes from patients with insulin-dependent diabetes mellitus (IDDM), a chronic autoimmune disease, have recently been shown to have decreased surface expression of MHC class I antigens. Since...Full Text Available
Epidemiological data indicate that children conceived in vitro have a greater relative risk of low birth-weight, major and minor birth defects, and rare disorders involving imprinted...Full Text Available
In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is ...
Cracking resistance and metal damage are considered in relation to structural state for steam-pipe fittings during use. An approximate scheme is given for estimating the maximum permissible operating time in the plastic state in relation to the depth of an observed crack-type defect.
Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B{sup +}-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the {open_quotes}excess{close_quotes} interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO{sub 2} interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be discussed. {copyright} {ital 1999 American ...
Congenital woolly hair is a disorder with structural defects of the hair shafts. Curled hairs are noticed at birth or soon after birth and often improve with age. Some cases of woolly hairs are associated...Full Text Available
In a previous study we found that nanofibrous poly(l-lactic acid) (PLLA) scaffolds mimicking collagen fibers in size were superior to solid-walled scaffolds in promoting osteoblast differentiation...Full Text Available
The use of cementless threaded cups in THA is a well-established treatment. Fractures of the cups are rare complications recorded in individual cases with material defects being discussed as the primary...Full Text Available
Molecular chaperones protect cells from the deleterious effects of protein misfolding and aggregation. Neurotoxicity of amyloid-beta (Aβ) aggregates and their deposition in senile plaques are...Full Text Available
The abnormal megakaryocytopoiesis associated with idiopathic myelofibrosis (IM) plays a role in its pathogenesis. Because mice with defective expression of transcription factor GATA-1 (GATA-1low...Full Text Available
SUMMARYAmeloblastin (AMBN) is the second most abundant extracellular matrix protein produced by the epithelial cells called ameloblasts and is found mainly in forming dental enamel....Full Text Available
We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.
We point out that the moduli sector of the $(2,2)$ string compactification with its nonperturbatively preserved non-compact symmetries is a fertile framework to study global topological defects, thus providing a natural source for the large scale structure formation. Based on the target space modular invariance of the nonperturbative superpotential of the four-dimensional N=1 supersymmetric string vacua, topologically stable stringy domain walls are found. They are supersymmetric solutions, thus saturating the Bogomolnyi bound. It is also shown that there are moduli sectors that allow for the global monopole-type and texture-type configurations whose radial stability is ensured by higher derivative terms.
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.
The defects localization in power cables follows several steps: identification, pre-localization and precise localization. Pre-localization methods, other than echo-metry, are presented first: bridge methods, particular case of low voltage networks, future perspectives. Then, the precise localization methods are described: magneto-acoustic method, audible frequencies method. The particular case of underwater and high-voltage cables is considered too (oil and gas leaks detection). (J.S.)
Several possibilities of the use of molecular models in quantum-chemical investigations of the structure of defect centers on the surfaces of oxides on nontransition elements have been illustrated. There has been a special discussion of the assumption of the local nature of the chemical interactions in these systems, which underlies such an approach, and of the consequent laws governing the formation of their lattices in the example cases of zeolites, kaolinites, and comparable boron- and aluminum-containing oxides. A quantum-chemical interpretation of the body of experimental data from investigations of the dehydroxylation of H forms of zeolites has been given. The structure of the Lewis acid centers formed as a result, and their chemisorption properties, have been discussed.
Magnetic behavior in three compounds RTa{sub 3}O{sub 9} (R = Nd, Eu and Ho) with defect-perovskite structures has been investigated by DC magnetic susceptibility. The susceptibility of NdTa{sub 3}O{sub 9} shows strong influence of crystal field. For EuTa{sub 3}O{sub 9} a typical Van Vleck paramagnetism has been observed. HoTa{sub 3}O{sub 9} obeys a Curie-Weiss law above 20 K. (orig.) 8 refs.
Self-consistent electronic structure calculations have been performed on two compositions of scandium sulfide ScS and Sc/sub 3/S/sub 4/. The results of the calculation of ScS are similar to those obtained for other transition metal chalcogenides and are in excellent agreement with heat capacity and reflectance measurements as well as UPS experiments. The calculation of the defect structure indicates the creation of sulfur p nonbonding states in metal-deficient ScS. The valency of the metal ions remains unchanged upon the creation of vacancies.
This study deals with the application of wavelet analysis to detection and characterization of defects from eddy-current and ultrasonic testing signals of a low signal-to-noise ratio. Presented in this paper are the methods for processing eddy-current testing signals of heat exchanger tubes of a steam generator in a nuclear power plant. The results of processing eddy-current testing signals of tube test pieces with artificial flaws show that the flaw signals corrupted by noise and/or non-defect signals can be effectively detected and characterized by using the wavelet methods. (author)
Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the ...
To evaluate the radiological patterns of vascular invasion in peripheral cholangiocarcinomas. Hepatic arteriography and portography in 20 cases with cholangiocarcinoma including 12 cases with angiographic CT were retrospectively analyzed. The arteriography showed no arterioportal shunt, hypertrophy of tumor vessel, or tumor staining extending to central portion of the mass in all cases. However, doughnut shaped peripheral tumor staining was seen until late hepatogram phase in 12 cases and compensatory hyperperfusion around the mass was seen in six cases (eight cases if include arterial CT). Encasement of tumor vessel was seen in 12 cases, and hypertrophy of feeding vessel in nine cases. On portography, the filling defect on segmental portal branch could be demonstrated only in 11 cases. Shape of the portal defect was tapered narrowing in six cases, abrupt narrowing in two cases but intraluminal nodular filling defect was ...
In steel production lines such as pickling lines, cold rolling mills and coil processing lines, the needs for on-line continuous measurement of surface quality and property of products and on-line inspection of surface defects have become strong. This is because user requirements for the surface quality of various products have become severer than before and besides, expectations are running high on the side of manufacturers for higher speeds of production lines and higher quality by the adoption of automatic inspection. As for the measurement of surface quality, continuous measurements along the full length of a steel strip are required in order to overcome problems derived from off-line, batch measurements that cannot satisfy user's demands for quality assurance. As for surface defects detection, various kinds of methods have been practically applied to production lines. However, it is the matter of fact that performances of these ...
The evaluation of possible manufacture-based defects in turbine shafts and housings for component serviceability relevance is of particular interest not only in post-manufacturing NDT but also in evaluation of NDT results obtained by in-service inspections of components with long service lives. The results discussed in the paper are summarized as follows: Most of the examined natural defects in the forgings and castings behave like cracks under the simulated operating conditions and hence may well be evaluated by fracture mechanical methods for their serviceability relevance determined by crack propagation under fatigue, creep and creep-fatigue stress. The empirical correlation of true defect size and US testing results (echo signal, echodynamics, attenuation) permits improved determination of true defect sizes in the turbine components. Care has to be taken to select the proper testing and evaluation ...
Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial ...
Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial ...
A set of advanced models implemented into the simulator Sentaurus Process was applied to simulate ultra shallow junction formation by flash lamp annealing (FLA). The full path transient enhanced diffusion model includes equations for small interstitial clusters (I_2, I_3, I_4), #left brace#3 1 1#right brace# defects and dislocation loops. A dopant-point defect clustering model is used for dopant activation simulation. Several cluster types are considered: B_2, B_2I, B_2I_2, B_3I, B_3I_2, B_3I_3 for boron and As_2, As_2V, As_3, As_3V, As_4, As_4V for arsenic. Different point defect and dopant-point defect pair charge states are taken into account to obtain accurate results in the high doping level region. The flux expressions in the three-phase segregation model include a dependence on the doping level and point defect supersaturation. The FLA process was performed at various peak ...
As semiconductor device density and wafer area continue to increase, the volume of in-line and off-line data required to diagnose yield-limiting conditions is growing exponentially. To manage this data in the future, analysis tools will be required that can automatically reduce this data to useful information, e.g., by assisting the engineer in rapid root-cause diagnosis of defect generating mechanisms. In this paper, the authors describe a technology known as Spatial Signature Analysis (SSA) and its application to both optically-detected defect data as well as electrical test (e-test) bin data. The results of a validation study are summarized that demonstrate the effectiveness of the SSA approach on optical defect wafermaps through field-testing at three semiconductor manufacturing sites on ASIC, DRAM and SRAM products. This method has been extended to analyze and interpret electrical test data and to provide a pathway for ...
This paper describes a technique for implementing the ultrasonic inside diameter (ID) creeping wave technique for detection and sizing ID connected defects using a phased array ultrasonic system. The technique uses multiple focal laws to produce the examination modes. The first focal law is designed to create a shear wave nominally at the critical angle for mode conversion to a longitudinal wave at the ID of a part, thus creating a creeping wave. This focal law is focused at the ID to improve sensitivity. The rest of the laws are designed to create tandem sound paths that progress up a vertical surface directly above the focal point of the creeping wave generation point. When a defect on the inner surface is detected with the creeping wave, the height of the defect can be measured from the response of a set of tandem laws without readjusting the position of the probe. Results from standard one-inch long notches of varying ...
The rates of spontaneous interbilayer and transbilayer exchange of ["3H]dimyristoylphosphatidylcholine (["3H]DMPC) were examined in the DMPC and DMPC/dimyristoylphosphatidylethanolamine (DMPE) large unilamellar vesicles in the liquid-crystalline-, gel-, and mixed-phase states. DMPC desorption rates from either gel or liquid-crystalline phases containing DMPE are very similar to the corresponding rates from pure DMPC gel or liquid-crystalline phases. The authors proposed that the DMPC/DSPC behavior results from packing defects in gel phases composed of both DMPC and DSPC molecules because of the four-carbon difference in the acyl chain lengths of the two species. The present results strongly support this hypothesis because no such anomalous behavior is observed in DMPC/DMPE, which is similar to DMPC/DSPC in phase behavior but does not have the chain length difference. These results are not consistent with lipid headgroup dehydration as the major energetic barrier to ...
This study evaluated whether differences in design of 3-dimensional polylactic acid barriers (EPi-Guide and Guidor) would influence hard tissue results in the treatment of Grade II furcations in humans. A multicenter study was conducted, using 40 patients with moderate to advanced bilateral chronic adult periodontitis of the mandibular first or second molars. After flap access, debridement, and root preparation, surgical bone level measurements were taken and membranes were placed on a random basis. Surgical reentry occurred at 1 year. Data collected from all 3 investigative centers were pooled and analyzed using an analysis of variance appropriate for a counterbalancing design. Both barrier materials resulted in significant gains of attachment level and defect reduction. The composite reduction in the vertical component of the osseous defects was greater in the sites treated with Epi-Guide as compared to those treated with Guidor; the ...
As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; extended defects and transient enhanced ...
Replication-defective vectors derived from reticuloendotheliosis virus were used to transduce exogenous genes into early somatic stem cells of the chicken embryo. One of these vectors transduced and expressed the chicken growth hormone coding sequence. The helper cell line, C3, was used to generate stocks of vector containing about 10/sup 4/ transducing units per ml. Injection of 5- to 20-..mu..l volumes of vector directly beneath the blastoderm of unincubated chicken embryos led to infection of somatic stem cells. Infected embryos and adults contained unrearranged integrated proviral DNAs. Embryos expressed the transduced chicken growth hormone gene and contained high levels of serum growth hormone. Blood, brain, muscle, testis, and semen contained from individuals injected as embryos contained vector DNA. Replication-defective vectors of the reticuloendotheliosis virus transduced exogenous genes into chicken embryonic stem cells in vivo.
Fluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed that F is not only able ...
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of ...
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.
Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results ...
Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P"+N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P"+N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results are ...
General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional ...
Vanadium doped manganese bi-oxide has been obtained from a solution containing both cations. The X-ray diffraction of this material indicates a rutile-type phase but the enlargement of some lines supports the existence of several lattice defects. Also the particle size of the doped material is significantly smaller than the one of the non-doped material obtained in the same conditions. The presence of pentavalent vanadium inside the lattice leads to a small amount of trivalent manganese. Electron microscopy shows the existence of defects which have a tendency of becoming well-ordered and to stabilize a sur-structure. At ambient temperature, the electrochemical behaviour of doped manganese bi-oxide is greatly improved when compared to the non-doped phase. This behaviour is due to the presence of numerous lattice defects and to the smaller size of crystallites. In polymer batteries, the behaviour is similar the one of the ...
Bone matrix gelatin, prepared by sequential chemical treatment including decalcification with 0.6 N hydrochloric acid [9], was used as an alloimplant for the treatment of benign bone tumours, tumorous conditions of bone, acetabular dysplasia, delayed union, traumatic bone defects and other disorders. The bone matrix gelatin implanted into bone defects was incorporated successfully in 98% of implantations, excluding cases of infection, tumour recurrence and recurrence of tumorous conditions. The material was also implanted into ten bone sites as an onlay but in five it was resorbed without new bone formation. The incorporation of the bone matrix gelatin into the recipient bed was completed from 6 to 33 months (average 14.9 months) after implantation. Wound infection complicated 5 of 165 implantations (3%) in previously uninfected sites. Low grade fever persisting after the tenth post-operative day (a probable sign of immunological reaction) ...
The rate of residual-resistivity increase and the isochronal recovery have been studied on the fcc metals Al, Ni, Cu, Pd, Ag, Pt, and Au irradiated at 4.6 K with reactor neutrons to a dose of about 10"1"9 (fast neutrons)/cm"2. The rate of resistivity increase is nonlinear as a function of irradiation-induced resistivity; computer analysis shows that the data are best fitted with an erxpression having up to third-order terms in #DELTA#rho. There are deviations from simple damage-rate theory in all cases, but an anomalous negative deviation from a linear law (convex curvature) is observed in Ni, Pd, Pt (and Fe). This behavior is most probably caused by a decrease of the specific Frenkel-defect resistivity due to defect clustering, an effect which should contribute in all metals after fast-neutron irradiation to high doses. Saturation values of resistivity and defect concentration as well as recombination volumes have veen ...
The DGs (Diesel Generators) in NPP (Nuclear Power Plant) has been used for the emergency electric power source to shot down the nuclear reactor safety in case of station blackout. The RCM (Reliability Centered Maintenance) has been applied to DGs for increasing the safety of NPP. The structured defects of DG were not remedied by the improvement of maintenance method. As the first stage of RCM, to find the structured defect, its failure= models were searched and analyzed through the ten year maintenance information. The structured defects such as the air compressor, the lubricating oil pressure, and the insufficient load were the root causes of main failures. The air reservoir reinstallation, the lubricating oil tube modification, the load bank installation, and the qualitative instrumentation were the solutions for the hardware oriented RCM of DGs. There remains the software oriented RCM such as the rejection of useless ...
Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for ...
The downstream failure of cable during winding, insulating, coil winding, and coil assembly is a significant issue in magnet production. The impact of these failures are costly both financially, and from the time to recover from this downstream failure. The current approach to cabling has been to visually inspect the cable for any gross defects during cabling. To date this has been effective in finding small defects such as crossovers for example, which drastically reduce the mechanical integrity of the strand, and thus the cable itself. But because of the large volume of cable which will be manufactured an automated flaw detection system which can inspect the cable and detect these type of defects will be needed. We have recently done an on-line experiment using an Eddy current system, and specialized Eddy current probes to inspect cable during manufacturing. We will present the results of our inspection demonstrating ...
The downstream failure of cable during winding, insulating, coil winding, and coil assembly is a significant issue in magnet production. The impact of these failures is costly both financially and because of the time needed to recover from them. The current approach to cabling has been to visually inspect the cable for any gross defects during cabling. To date this has been effective in finding small defects such as crossovers, which drastically reduce the mechanical integrity of the strand and thus of the cable itself. But because of the large volume of cable that will be manufactured, an automated flaw detection system that can inspect the cable and detect these types of defects will be needed. We have recently done an on-line experiment using an Eddy current system and specialized Eddy current probes to inspect cable during manufacturing. We will present the results of our inspection, demonstrating detection of ...
A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ...
Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...
We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650-800 deg. C. This is achieved by incorporating a layer of epitaxially grown Si{sub 1-y}C {sub y} layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 x 10{sup 14} cm{sup -2} was performed followed by annealing at temperature ranges of 650-800 deg. C. Samples with the Si{sub 1-y}C {sub y} layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime.
Purpose: To describe the clinical aspects and evaluate optical coherence tomography of macular microholes. Methods: Seven patients were assessed (8 eyes) with microholes of the macula. All patients underwent complete eye examination, fundus photography, fluorescent angiography and OCT-3 imaging. Results: Ages ranged from 26 to 69 years. Six patients were female (85.7%) and five of them had microhole in the right eye. The presenting symptom was decrease in visual acuity (71.3%) and central scotoma in (14.3%). Five eyes (71.4%) had no defects shown by fluorescent angiography. A defect in the outer retina was demonstrated in all eyes on optical coherence tomography. The lesions were nonprogressive. Conclusion: Macular microholes are small lamellar defects in the outer retina. The condition is nonprogressive, generally unilateral and compatible with good visual acuity. Fundus biomicroscopy associated with an optical coherence ...
Sealants for radon-resistant foundation construction must seal the gap between concrete sections. Modern sealants have such low permeability that seal performance depends only on the permeability of the material that contacts the sealant. The surface permeability of concrete walls and floors was measured by a specially designed permeameter, which measures the airflow induced by a pressure difference across a temporary test seal applied to the surface. The permeability of bulk concrete is about 10"-"1"5 m"2. Areas free of surface defects had surface permeability ranging from 10"-"1"4 to 10"-"1"6 m"2. However, surface defects are common on concrete wall surfaces, which increase the permeability to >10"-"1"2 m"2, too high for standard seal designs to be adequate as the only method of soil gas and radon exclusion. Radon-resistant seals require either extended contact widths or mechanical removal of the surface layer and ...
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. ...
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5x10"1"3 cm"-"2 Si into (001)Si, followed by a high temperature (815 degree C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the open-quote open-quote+1 close-quote close-quote model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. copyright 1996 American Institute ...
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the ...
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude ...
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of As-implanted Si. The relations of the enhanced diffusion to residual defects and lattice restoration have been studied in detail. The As concentration profiles and residual defects are measured. It is found from the data that the lattice has been restored when the implanted sample is annealed at 1150 deg C (or 1050 deg C) for 1s. The defect density decreases rapidly with increase of annealing time (from 1 to 12s). The enhanced diffusion coefficient maximum appears in the annealing time ranging from 1 to 5s. Allmost a 'complete' annealing of displacemet damage is obtained and the diffusion coefficient is less than that in above-mentioned conditions when the implanted samples are annealed at 1150 deg C in the time ranging from 12 to 20s. the mechanism of lattice restoration and enhanced diffusion in annealing process have been ...
Many mechanical parts are subjected to stresses and strains that may eventually lead to their failure. In order to prevent the costly delays associated with equipment down-time, many parts have to be tested for weaknesses and defects when machinery is constructed or dismantled for maintenance. These procedures are known as Non-Destructive Testing (NDT) methods. Five types of non-destructive testing methods routinely used are radiographic testing, ultrasonic testing, magnetic particle inspection, liquid penetrant testing and eddy current testing. Out of these five techniques industrial radiography plays an important role in non-destructive testing to reveal interior defects in materials. In radiography almost two-thirds of the radiation reaching the film is scattered radiation which does not form the image of defects. Scattered radiation generated inside and outside a material has a very large effect on sensitivity of flaw ...
In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.
How to decide which mine surface tasks may be performed by industrial robots to improve productivity and working conditions is described. Charts are presented of the industrial tasks performed on the surface and how each task may be classified as light, average, difficult or very diffcult according to a defect criteria is explained (defective operations are those which involve, heavy, harmful, stressful or dangerous jobs). The results of these calculations are used to identify which operations are suitable for first introduction of robots since traditional automation methods cannot be used, e.g. various storage, loading and packaging tasks, coal selection, sorting and removal of foreign matter, provision of services such as food preparation, cleaning, etc. Robots may also be used to control automated operations that are monotonous and hazardous for human operators. It is envisaged that in the future computer programmed robots with artificial ...
The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.
We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.
Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.
The performance of steam generator tubes in water-cooled nuclear power reactors has been reviewed for 1979. Tube failures occurred at 38 of the 93 reactors surveyed. Causes of these failures and procedures designed to deal with them are described. The defect rate was twice that in 1978 but still lower than the two previous years. Methods being employed to detect defects include increasing use of multifrequency eddy-current testing and a trend to full-length inspection of all tubes. To reduce the incidence of tube failures by corrosion, plant operators are turning to full-flow condensate demineralization and more leak-resistant condenser tubes. (author).
Design rules for robustness require insensitivity to local failure and the prevention of progressive collapse. This is often verified by applying the load case ''removal of a limited part of the structure''. This paper will evaluate typical structural systems for large-span timber roof structures against these requirements, comparing the results against typical reasons for damages and failures. Applying the finding that most failures of timber structures are not caused by random occurrences or local defects, but by global (repetitive) defects (e.g. from systematic mistakes), it is shown that the objective of load transfer-often mentioned as preferable-should be critically analysed for such structures. Based on these findings, proposals for structural systems and details towards a robust de...
On ships, tankers and similar vessels structural defects such as cracks and corrosion damage are typically repaired by welding. However, welding is unwanted hotwork on floating offshore units (FOUs) such as floating, production, storage and offloading (FPSO) and floating, storage and offloading (FSO) vessels because it requires shutdown of parts of the vessel thus resulting in expensive production delays. Bonded fibre composite material patch repairs can be used as an alternative to overcome the hazards of hotwork associated with welding. The patches are bonded over the defect and the integrity of the original structure is hence restored. The patch repair technology can also be utilised to provide upgrades, such as life extensions and higher design requirements. A recommended practice (RP)...
This paper is concerned with the real time automatic discriminating of flaws from two categories; i. cracks (planar defect) and ii. Non-cracks (volumetric defect such as cluster porosity and slag) using pulse-echo ultrasound. The raw ultrasonic flaws signal were collected from a computerized robotic plane scanning system over the whole of each reflector as the primary source of data. The signal is then filtered and the analysis in both time and frequency domain were executed to obtain the selected feature. The real time feature analysis techniques measured the number of peaks, maximum index, pulse duration, rise time and fall time. The obtained features could be used to distinguish between quantitatively classified flaws by using various tools in artificial intelligence such as neural networks. The proposed algorithm and complete system were implemented in a computer software developed using Microsoft Visual BASIC 6.0 (author)
PurposeTo evaluate pathologic features of the photoreceptors in myopic foveoschisis with the Fourier-domain optical coherence tomography (FD-OCT).DesignObservational case series.MethodsSeventeen eyes of 15 patients with myopic foveoschisis (foveal detachment type, six eyes; foveoschisis type, 11 eyes) were included. We observed the photoreceptor inner and outer segments (IS/OS) and evaluated the morphologic status using FD-OCT. Fundus photographs and time-domain OCT (TD-OCT) images also were obtained.ResultsIS/OS defects, which are uncommon in retinal detachments in eyes with myopia, were seen clearly in five eyes (three eyes [50%] with the foveal detachment type; two eyes [18%] with the foveal schisis type). Fundus photographs showed myopic chorioretinal atrophy in eight study eyes (47%),...
The authors have shown that toxicity of paraquat for Escherichia coli is increased over 1-fold in strains defective in the biosynthesis of spermidine compared to isogenic strains containing spermidine. The increased sensitivity of these spermidine-deficient mutants to paraquat is eliminated by growth in medium containing spermidine or by endogenous supplementation of spermidine by the use of a speE"+D"+ plasmid. No paraquat toxicity is seen in the absence of oxygen, even in amine-deficient strains, indicating that superoxide is the agent responsible for the increased toxicity. However, the specific mechanisms responsible for the increased paraquat toxicity in the spermidine-deficient mutants remain to be determined. The marked sensitivity to paraquat of E. coli deficient in spermidine is of particular interest, since such mutants have no other phenotypic properties that can be easily assayed. This increased sensitivity has been used as the basis of a convenient ...
We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.
Eddy current testing is one of the most widely used methods in non-destructive testing for the inspection of conductive materials. Numerical modelling of eddy current testing has emerged as an important approach alongside experimental studies. This paper investigates an application of numerical modelling and experimental study as a means of the quantitative non-destructive evaluation (QNDE) of defects in conductive samples. There are two methods of measuring eddy current response, more commonly by measuring the change in impedance of the eddy current probe coil, or as used in this work, by measuring the change in magnetic field directly using magnetic field sensors such as superconducting quantum interference devices, giant magneto resistance, or as in this case Hall sensors. Specifically,...
The paper studies the effect of crystal structure of LiNbO_3 monocrystals on NMR spectra of "7 Li and "9"3 Nb. Models of defect structure are analyzed via comparison of NMR experimental spectra and gradients of electrical field predicted on the basis of the calculations on "7 Li and "9"3 Nb nuclei using the relevant model. It is shown that no one of the main models of lithium niobate defect structure explains the peculiarities of NMR spectra. Conclusions are made about the independence of the reasons of occurrence of NMR additions lines "7 Li and "9"3 Nb, as well as, about links of "9"3 Nb NMR weak additional lines with the ranges of a different crystalline phase that may form while growing. 18 refs., 2 figs., 3 tabs.
The purpose of this paper is to evaluate the role of the strain-relaxation processes on the leakage current of embedded SiGe S/D junctions. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured to further investigate the relaxation degree of embedded SiGe S/D junctions in the regime where partial relaxation by misfits dislocations is assumed, yielding a reduction of the leakage current density. Further, the impact of the ion implantation-related defects on the electrical performance is discussed. The analysis is complemented with structural characterization based on High Resolution Transmission Electron Microscopy (HRTEM) and Nomarski microscopy. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Lifetime of minority charae carriers in the Si and Ge p-n unctions has been measured by pulse method of conductivity modulation of base. Its dependence on the X-ray radiation dose has been investigated. Dependence of current transmission coefficients on the dose has been measured and their sharp decrease at low doses and the following saturation at high doses have been observed. Linear dependence of lifetime on X-ray radiation dose has been obtained. Resulting from the comparison of regularities of the change of lifetime due to current characteristics, it has been shown that X-ray radiation leads to the formation of the surface defects, influencing the change of current characteristics as well as to stationary structural defects, causing the decrease of lifetime of the charge carriers with the increase of X-ray radiation dose.
We developed mice with germline endogenous expression of oncogenic Hras to study effects on development and mechanisms of tumor initiation. They had high perinatal mortality, abnormal cranial dimensions, defective dental ameloblasts, and nasal septal deviation, consistent with some of the features of human Costello syndrome. These mice developed papillomas and angiosarcomas, which were associated with Hras(G12V) allelic imbalance and augmented Hras signaling. Endogenous expression of Hras(G12V) was also associated with a higher mutation rate in vivo. Tumor initiation by Hras(G12V) likely requires augmentation of signal output, which in papillomas and angiosarcomas is achieved via increased Hras-gene copy number, which may be favored by a higher mutation frequency in cells expressing the oncoprotein. PMID:19416908
As a general approach to the problem of precursive behavior in alloys that undergo a displacive transformation, defect theories are becoming increasingly popular. However, the microscopic origin of the proposed defects is usually not considered. Yu and Anderson (1984) have argued that properties of strong-coupling superconductors, such as the A-15 compounds, imply a breakdown of Migdal's theorem (the adiabatic, or Born-Oppenheimer approximation for separation of electrons and phonons) in these systems. The electron-phonon coupling is so strong that it must be incorporated already in zeroth order. This is the basis for local phonon models, in which the electron-phonon coupling provides an effective double well potential for a localized group of atoms. The Yu-Anderson model and an analogous local Jahn-Teller model (Abell, 1983) are reviewed in connection with displacive transformations in strong-coupling alloys.
By method of transmission electron microscopy and measuring of microhardness the peculiarities of influence of radiation defect clusters on molybdenum radiation hardening along range path of protons with 30 MeV initial energy are studied. Decrease effect of hardening growth value and even its absence depending on irradiation dose in the range of 10-20 MeV proton energies in presence of high density of radiation defect dispersed clusters is revealed. It is shown experimentally that this effect is connected with accumulation of hydrogen up to not very high concentrations (not more than 5x10"-"4 at.%) at the expense of elastic and inelastic proton scattering. 5 refs.; 5 figs.
This research deals with in the study of the use of innovating magnetic sensors in eddy current non destructive inspection. The author reports an analysis survey of magnetic sensor performances. This survey enables the selection of magnetic sensor technologies used in non destructive inspection. He presents the state-of-the-art of eddy current probes exploiting the qualities of innovating magnetic sensors, and describes the methods enabling the use of these magnetic sensors in non destructive testing. Two main applications of innovating magnetic sensors are identified: the detection of very small defects by means of magneto-resistive sensors, and the detection of deep defects by means of giant magneto-impedances. Based on the use of modelling, optimization, signal processing tools, probes are manufactured for these both applications.
We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.
We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.
The surface permeability of concrete walls and floors in houses was measured with a specially designed permeameter, based on measuring the air-flow induced by a pressure difference across a temporary test seal applied to a surface. The permeability of bulk concrete is 10"-"1"6 m"2. Areas free of surface defects had permeability ranging from 10"-"1"4 to 10-"1"6 m"2. However, surface defects are common on concrete wall surfaces, which increase the permeability to >10"-"1"2 m"2. This is too high for standard seal designs to be adequate as the only method of soil gas and radon exclusion. Satisfactory seals require either extended contact width or mechanical removal of the surface layer. (orig.). (2 figs., 1 tab.).
Abstract: We have performed petrographic and spectroscopic studies of brown diamonds from an eclogite xenolith from the Udachnaya pipe (Yakutia, Russia). Brown diamonds are randomly intermixed with colorless ones in the rock and often located at the grain boundaries of clinopyroxene and garnet. Brown diamonds can be characterized by a set of defects (H4, N2D and a line at 490.7nm) which are absent in colorless diamonds. This set of defects is typical for plastically deformed diamonds and indicates that diamonds were likely annealed for a relatively short period after deformation had occurred. Excitation of brown colored zones with a 632.8nm He-Ne laser produced the typical diamond band plus two additional bands at 1730cm^-^1 and 3350cm^-^1. These spectral features are not genuine Raman ban...
A series of desilicated ZSM-5 catalysts previously shown to have improved catalytic performance in the MTG (methanol-to-gasoline) reaction [M. Bjorgen, F. Joensen, M.S. Holm, U. Olsbye, K.-P. Lillerud, S. Svelle, Appl. Catal. A 345 (2008) 43] was subjected to thorough examination using FTIR. Clearly, defects represented by internal Si-OH sites are removed upon NaOH treatment. In a parallel manner, free Si-OH sites increase in concentration and the results point to a selective mechanism for formation of mesopores as the framework dissolution preferentially takes place at defective sites in the crystallites. The acid properties of the desilicated materials were investigated by applying CO and collidine (2,4,6-trimethylpyridine) as molecular probes. Monitoring the induced frequency shifts upo...
After an international ideas competition by TNC Switzerland and Germany in 1996, six companies where given the opportunity to construct a prototype of their newly developed integrated PV-sound barrier concepts. The main goal was to develop highly integrated concepts, allowing the reduction of PV sound barrier systems costs, as well as the demonstration of specific concepts for different noise situations. This project is strongly correlated with a German project. Three of the concepts of the competition are demonstrated along a highway near Munich, constructed in 1997. The three Swiss installations had to be constructed at different locations, reflecting three typical situations for sound barriers. The first Swiss installation was the world first Bi-facial PV-sound barrier. It was built on a highway bridge at Wallisellen-Aubrugg in 1997. The operational experience of the installation is positive. But due to the different efficiencies of the two cell sides, its specific yield lies ...
The Rader Member contains coarse allochthonous carbonate debris deposited basinward of a approx. = 500-m high angle of repose foreslope. Sheet-like megabreccias with internal channel fills up to 35 m thick are traceable 6.5 km along the reef escarpment (depositional strike) and extend 13 km southeast from the toe of slope into the Delaware basin. A prominent erosion surface at the base of the megabreccias may represent a major basin-sloping unconformity. At maximum thickness (65 m) of exposed Rader, three lithologic units are recognized in upward succession: (1) fine-grained, bioturbated limestones interbedded with fine-grained, laminated sandstones; (2) matrix- and clast-supported megabreccias comprised of chaotically oriented limestone blocks (up to 10 m across) with a fine-grained sandstone matrix; and (3) coarse to fine-grained carbonate turbidites interbedded with sandstones. The megabreccias truncate 30 m of section within 2.5 km of the shelf edge, completely ...
Magnetic properties of layer ferromagnets against the thickness are investigated. Two new compounds served for studies: Bisub(6)Tisub(2)Nbsub(0,5)Fesub(2,5)Osub(18) and Bi_7Ti_3Fe_3O_2_1. The Moessbauer effect and the magnetic susceptibility measurements were applied in the experiment. The Faraday method was used in magnetic measurements in fields from 1 to 9,5 kOe. The results of Moessbauer measurements show that temperature dependence of the spectra is typical for compounds with superparamagnetic properties. The magnetic fields Hsub(n) on Fe"5"7 nuclei in Bisub(6)Tisub(2)Nbsub(0,5)Fesub(2,5)Osub(18) and Bi_7Ti_3Fe_3O_2_1 are similar and equal to 520+-10 kOe. Therefore it may be concluded that relaxation times of nuclear spins in these compounds are equal or close to each other. The lines of quadrupole splitting appear in spectra together at 20 K. The results of magnetic measurements show that the Curie-Weiss law is satisfied in the range of high temperatures for magnetic ...
To heighten durability and safety of materials/parts for undersea oil drilling, the development of ceramic base materials was made by developing function harmony type process technology which harmonizes on a high grade contrary characteristics and various functions. The paper summed up the fiscal 1997 results. In the design of system formation, computational simulation technology was developed to the composite process and the diploid system. The development of multifunction simultaneous manifestation materials was trially made by the higher nano structure process. A study was made of control of microstructures of porous materials and matrix filling by the gas phase precipitation control. Proposed were selective control of grain growth from species crystals and the columnar particle orientation laminated structure of simultaneous manifestation of strength and toughness. By composite precipitation reaction control, studied were simultaneous dispersion of whisker and ...
A downhole seismic source which can output continuous waves having arbitrary waveforms was developed. The development was targeted to make tomographic exploration purposed to evaluate geological properties of a ground bed before and after constructing a building in a ground several hundred meters deep from the ground surface. The source is considered to be used in an environment consisting of soft rocks or more robust rocks and having no casing. It can be used in a well hole having a diameter of 100 mm, is capable of measuring P and S waves in a distance between well holes of up to 100 m, can be used at a depth of up to 500 m, and can output waveforms having seismic source spectra of up to 1000 Hz. An oscillation actuator using laminated piezo-electric elements was used for the oscillation element. The seismic source consists of a hydraulic device to clamp the equipment onto hole walls, piezo-electric elements as the oscillation element, and an inertia weight for ...
Experimental results of compatibility tests on ceramics-metal bonded structures performed under high heat flux conditions in splash test apparatus are reported. Emphasis is placed on results of the channel wall design and its critical operating conditions under MHD environment. The module design of one cold type and three semihot type insulators have been tested. These materials were Al_2O_3, Al_2MgO_4, LaAlO_4, MgO and Sialon ceramics. The methods of cold type ceramics-metal bonding structure were studied on Al_2O_3 and Spinel spray coating technology. The refractory metallizing and ceramics-metal graded structure manufactured by HIP technologies were applied to bonding between the MgO or LaAlO_4 and metallic cooling system. The Sialon non-bonding structure was tested with mechanical supported cooling system by shrinc fitting method. The results indicated that the bonding structures made of the MgO(MG-S) with Copper and Fe-Ni Alloy relaxation layers and MgO(MG-NC) with MgO-Ni Alloy ...
The Upper Jurassic Hith Anhydrite is a major hydrocarbon seal in the Arabian Gulf region. Outcrops, core samples from the subsurface, and the literature indicate that the Hith Formation is composed mainly of anhydrite. In most locations where a section of the Hith Formation has been measured, this unit contains less than 20% carbonate much of which is in the form of thin laminations. This lack of carbonate, locally thick layers of salt, and the predominance of anhydrite favor a playa for the setting in which this sediment was accumulated. In fact, much of the Hith has the sedimentary characteristics of the Holocene Lake MacLeod playa of Western Australia, which is dominated by layers of gypsum and halite (what little carbonate that occurs is found in layers at the base of the section). Locally the Hith appears to have accumulated in a sabkha setting, particularly toward central Abu Dhabi where it pinches out into shallow-water, and peritidal carbonate. This sabkha ...
Within the Williston basin, thickness variations of the Prairie Formation are common and are interpreted to originate by two processes: differential accumulation of salt during deposition and differential removal of salt by dissolution. Unambiguous evidence for each process is rare because the Prairie/Winnipegosis interval is seldom cored within the US portion of the basin. Therefore, indirect methods, using well logs, provide the principal method for identifying characteristics of the two processes. The results of this study indicate that the two processes can be distinguished using correlations within the Prairie Formation. Several regionally correlative brining-upward and probably shoaling-upward sequences occur within the Prairie Formation. Near the basin center, the lowermost sequence is transitional with the underlying Winnipegosis Formation. This transition is characterized by thinly laminated basal carbonates that become increasingly interbedded with ...
Eddy current testing (ECT) method is widely used as the non-destructive evaluation (NDE) of the various kinds of material degradation occurring in nuclear power plants (NPPs) components including steam generator (SG) tubes. Detection of any defects or flaws in the steam generator tubes in the early stage is very important in maintenance of NPP for its primary role as the pressure boundary with thin wall thickness. Although the ECT technique provides lots of information for a SG management, it has a generic problem in its reliability due to a low ability in detect of small defects and some difficulty in a signal analysis. For the improvement of these shortcomings in conventional ECT, profile-MRPC (motorized rotating pancake coil) ECT technology was developed in KAERI. The key of this new technology is the development of new eddy current probes, designated as a diagnostic probe (D-probe). The D-probe is furnished with a simultaneous dual function ...
Eddy current testing (ECT) method is widely used as the non-destructive evaluation (NDE) of the various kinds of material degradation occurring in nuclear power plants (NPPs) components including steam generator (SG) tubes. Detection of any defects or flaws in the steam generator tubes in the early stage is very important in maintenance of NPP for its primary role as the pressure boundary with thin wall thickness. Although the ECT technique provides lots of information for a SG management, it has a generic problem in its reliability due to a low ability in detect of small defects and some difficulty in a signal analysis. For the improvement of these shortcomings in conventional ECT, profile-MRPC (motorized rotating pancake coil) ECT technology was developed in KAERI. The key of this new technology is the development of new eddy current probes, designated as a diagnostic probe (D-probe). The D-probe is furnished with a simultaneous dual function ...
Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).
First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.
I discuss several examples of critical phenomena in O(N) models where topological excitations play an important role at criticality. I focus particular attention on the O(2) model in 3D, where recent measurements of the vortex string length distribution in equilibrium suggest the existence of a quantitative picture of the critical behavior in terms of defects. The compatibility of this perspective with renormalization group predictions is examined.
The risk perception of the public consists of two components: the objectively factual component and the subjectively irrational component. The two strategies adopted by the German gas supply industry are the internal and the external communication strategy. Concepts and measures of accident precaution, registration and analysis of accident data (installation and operating errors, defects on flue systems, pipelines and valves, subsequent installation of gas appliances) are discussed. (R.P.)
The paper reports the recovery of zinc and cadmium following 6.1 MeV alpha particle irradiation at 4.2 K as studied by means of electrical reistivity measurements. Specimens of 10 #mu#m thick have been used in order to obtain a homogeneous defect distribution over the whole thickness of the specimen. The pre-irradiation resistivity ratios were 700 and 750 for cadmium and zinc, respectively. (Auth.).
Nucleotide pool sanitizing enzymes Dut (dUTPase), RdgB (dITPase), and MutT (8-oxo-dGTPase) of Escherichia coli hydrolyze noncanonical DNA precursors to prevent incorporation of base...Full Text Available
This paper presents the results of the Spatial Signature Analysis (SSA) Electrical-test (e-test) validation study that was conducted between February and June, 1998. SSA is an automated procedure developed by researchers at the Oak Ridge National Laboratory to address the issue of intelligent data reduction while providing feedback on current manufacturing processes. SSA was initially developed to automate the analysis of optical defect data. Optical defects can form groups, or clusters, which may have a distinct shape. These patterns can reveal information about the manufacturing process. Optical defect SSA uses image processing algorithms and a classifier system to interpret and identify these patterns, or signatures. SSA has been extended to analyze and interpret electrical test data. The algorithms used for optical defect SSA have been adapted and applied to e-test binmaps. An image of the binmap is ...
One normally identifies the prediction of tachyons with a higher spin problem. We show that the same phenomenon also happens with certain spin-1/2 equations, in exactly the same circumstances. Furthermore, we prove that these equations also have the defect of possessing solutions with complex energies, even with the smallest external fields. The consequences of these results are analyzed.
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)
Attention is given to recent research on gear fault diagnostic techniques. A mathematic model for vibration signals of defective gears is presented. Novel methods of gear fault diagnosis, such as zoom complex envelope analysis, wideband demodulation techniques, bispectrum analysis, correlation spectrum analysis, and maximum entropy spectrum analysis, are demonstrated. The wide-band demodulation technique is found to exhibit a high SNR. Bispectrum and correlation spectrum are excellent for some mechanical fault forms.
An assay method is described for measurement of absolute concentrations of the molybdenum cofactor, based on complementation of the defective nitrate reductase ('apo nitrate reductase') in extracts...Full Text Available
This handbook is a unique compendium of knowledge on all aspects of the physics of liquid crystals. In over 500 pages it provides detailed information on the physical properties of liquid crystals as well as the recent theories and results on phase transitions, defects and textures of different types of liquid crystals. An in-depth understanding of the physical fundamentals is a prerequisite for everyone working in the field of liquid crystal research. With this book the experts as well as graduate students entering the field get all the information they need.
Positron emission tomography (PET) and magnetic resonance imaging (MRI) studies were performed on a case of neuro-Behcet's syndrome. In accordance with the clinical signs, FDG PET (using /sup 18/F-labeled 2-F-2'-desoxyglucose) revealed disseminated storage defects in the cerebrum and cerebellum. Focal regions of enhanced signal intensity were demonstrated in the parietal white matter of the cerebrum in T2-weighted images and in the brain stem by MRI. (orig.).
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
We report an observation of a delayed all-optical routing/switching phenomenon based on ultraslow group velocity of light via nondegenerate four-wave mixing processes in a defected solid medium. Unlike previous demonstrations of enhanced four-wave mixing processes using the slow light effects, the present observation demonstrates a direct retrieval of the resonant Raman-pulse excited spin coherence into photon coherence through coherence conversion processes.
Some of the results of property measurements of CeO{sub 2} and its solid solutions were reviewed. The deviation from stoichiometry of undoped and doped CeO{sub 2} was presented in several figures, which suggested that CeO{sub 2} fired at high temperatures in air might be nonstoichiometric in some degree. At low temperatures, the deviation from stoichiometry in doped CeO{sub 2} is higher than undoped CeO{sub 2}. As another interesting property, CeO{sub 2} shows high solubility to trivalent cations such as rare earth elements. A possible reason behind this high solubility was presented. The nonstoichiometric defect in undoped CeO{sub 2} and the trivalent cation in solid solution with CeO{sub 2} have to be compensated by other defects. The possible defect structures in this solid solution were reviewed and the most probable structure was chosen based on density measurement and impurity dependence of oxygen diffusion ...
This report discusses the following topics: Prompt fission neutron energy spectra for {sup 235}U and {sup 239}Pu; Two-parameter measurement of nuclear lifetimes; ``Black`` neutron detector; Data reduction techniques for neutron scattering experiments; Inelastic neutron scattering studies in {sup 197}Au; Elastic and inelastic scattering studies in {sup 239}Pu; and neutron induced defects in silicon dioxide MOS structures.
The phenomenological description of the giant magnetoresistance effect as well as discussion of the requirements which must be fulfilled in giant magnetoresistance thin film structures are given in the first part of our review. In the second part the magnetization reversal and giant magnetoresistance effect of antiferromagnetically coupled multilayers, spin Valve and pseudo-spin valve thin film structures are explained. For these structures we also discuss the influence of the structure defects such as surface roughness and pinholes on the giant magnetoresistance effect. (author)
Defects in mismatch repair genes cause the genetic instability characteristic of hereditary nonpolyposis colorectal cancer and a subset of sporadic colon tumors. The newest member of the mismatch repair gene family, GTBP, has recently been identified as a partial cDNA. Here, we describe the isolation of its 5{prime} terminus, allowing definition of the entire coding region. Several polymorphisms within the 5{prime} end were identified and are presented. 13 refs., 1 fig.
The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.
Klippel-Feil Syndrome (KFS) is a congenital anomaly characterized by a defect in the formation or segmentation of the cervical vertebrae. The clinical triad consists of short neck, low posterior hairline and limited neck movement. Multiple congenital anomalies have been associated with this disease. This is a case of KFS in a young girl along with situs inversus, which is an extremely rare association. Various systemic associations occurring in this multi-system disorder are also discussed. (author)
In this work, energy-based features for gear fault diagnosis and prediction are proposed. The instantaneous energy density is shown to obtain high values when defected teeth are engaged. Three methods are compared in terms of sensitivity, reliability and computation effectiveness. The Wigner Ville distribution is contrasted to the wavelet transform and the newly proposed empirical mode decomposition scheme. It is shown that all three methods are capable of a reliable prediction. An empirical law, which relates the energy content to the crack magnitude is established.
Biglycan (bgn)-deficient mice (KO) have defective osteoblasts which lead to changes in the amount and quality of bone. Altered tissue strength in C57BL6/129 (B6;129) KO mice, a property which...Full Text Available
In this article carbon co-implantation and step-by-step thermal treatments of shallow p"+-n-junctions formation were used with the purpose of extended defect suppression and reduction of boron transient enhanced diffusion. A substantial improvement of the structural and electrical parameters of shallow p"+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)
The Focused-Ion-Beam (FIB) is a powerful tool for fast, precision cross-sectioning and inspection of submicron defects in multilayered integrated circuit devices. However, the low contrast between the layers in FIB cross-sections can make the feature of interest difficult to observe, which has become a limitation for FIB cross-sectioning. A technique using plasma etch to decorate the FIB cross-sections has proven to be a simple solution to overcome this limitation.
Dendritic cells (DC) are the most potent antigen-presenting cells and play a central role in the induction of antiviral immune responses. Recently, we have shown that monocyte-derived DC (MoDC) from...Full Text Available
Focused ion beam (FIB) repair of chromium defects on photomasks and reticles leaves a post repair stain in the quartz substrate. The wavelength dependent absorption properties of typical stained regions have been measured, showing transition losses up to 80% in the deep uv. A simple model is in good qualitative agreement with the experimental results. (author).
A case study is presented about the failure of a stainless steel blade reinforcing band in a steam turbine. The inspection results and analysis of samples of material are discussed. Being pitting corrosion and cracks the main defects found, a study of chemical composition and heat treatment state of the steel is made and findings are related to type of failure. (orig.)
Using conventional deep level transient spectroscopy (DLTS), we have characterized the defects introduced in OMVPE n-GaAs at 15 K by 5.4 MeV alpha particle irradiation from an americium 241 radio-nuclide. After this low temperature irradiation two new defects not yet reported for alpha irradiated GaAs before, E[alpha]7 and E[alpha]9, were detected 0.07 eV and 0.19 eV below the conduction band, respectively. The introduction rates of E[alpha]7 and E[alpha]9 are calculated to be 41 cm[sup -1] and 187 cm[sup -1] respectively. It was observed that both defects obeyed first order annealing kinetics, with E[alpha]9 being removed at 225 K and E[alpha]7 at 245 K corresponding to the well known stage I annealing region. The annealing rate of E[alpha]7 corresponds to an activation energy of 0.86 eV, with a pre-exponential factor of 1.0 x 10[sup 15]s[sup -1]; and the removal of E[alpha]9 has an activation energy of 0.88 eV and a ...
Bony craniofacial deficits resulting from injury, disease, or birth defects remain a considerable clinical challenge. In this study, microsphere-based scaffold fabrication methods were use to...Full Text Available
Human T-cell leukemia virus type 1 (HTLV-1) is the etiologic agent of adult T-cell leukemia/lymphoma (ATLL), HTLV-1-associated myelopathy/tropical spastic paraparesis (HAM/TSP), and other diseases....Full Text Available
In in-service inspection of steam-generator tubes, the need for reproducibility of the measurement results and for comparison of these results over two successive inspections has led EDF to specify the main characteristics of the eddy-current probes and to design equipment to measure them. This equipment is presented here and the electrical and magnetic results are correlated with those obtained by testing tubes with reference defects.
In in-service inspection of steam-generator tubes, the need for reproducibility of the measurement results and for comparison of these results over two successive inspections has led EDF to specify the main characteristics of the Eddy-Current probes and to design equipment to measure them. This equipment is presented here and the electrical and magnetic results are correlated with those obtained by testing tubes with reference defects. 5 refs.
Fifty-six tuberculosis patients and twenty-eight control subjects were evaluated in a comprehensive investigation of cellular and humoral immune function in pulmonary TB. The patient group showed significantly...Full Text Available
Investigations of polymorphonuclear leukocyte (PMN) function were performed in a 5-yr-old white female with delayed umbilical cord separation, impaired pus formation, and a severe defect of PMN chemotaxis....Full Text Available
Transcriptional silencing in Saccharomyces cerevisiae occurs at several genetic loci, including the ribosomal DNA (rDNA). Silencing at telomeres (telomere position effect [TPE])...Full Text Available
Defects are produced in zinc by 6.1 MeV #alpha#-particle irradiation at 4.2 K and the subsequent recovery between 4.2 and 22 K. No evidence is found for free migration of an interstitial in the temperature range investigated. The recovery spectra reveal a series of substages which are ascribed to recombination of close Frenkel pairs. (author).
Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross section transmission microscopy (XTEM) as ...
The quasi-static normal indentation of sandwich panels with quasi-isotropic laminated composite skins and honeycomb or foam cores, by spherical indentors, has been investigated using experiments and finite element analysis. The experimental program emphasized the effects of indentor size on the resulting load indentation responses, failure mechanisms in the skin and the core, and the measurement of contact areas between indentor and the target. The sandwich panels were indented up to the initiation of skin fracture and the resulting contact data was used to characterize contact power laws. A non-linear finite element model was developed based on the experimental observations to systematically explore the indentation behavior of diverse sandwich configurations and to investigate the contact pressure distributions. The finite element model was used as an experimental tool in the development of a simple non-dimensional semi-empirical model that was based on the ...
Minimum weight design is an important criterion in aircraft and spacecraft because it allows either an increased pay-load or higher performance. As a result, the use of composite sandwich panels has grown due to their light weight and high rigidity. In order to further increase the efficiency of these structures, designers have used different materials in different shapes in the facesheets and in the core. One of the most recent innovations has been the use of a uniform net of carbon fibre/epoxy as the facesheets. In the present study, the optimal design of sandwich plates with heterogeneous, facesheets is treated. The plate mass is minimized, considering the first natural frequency and certain failure loads as constraints. Weight reduction is obtained by defining a nonuniform distribution of composite material in the facesheets. Initially, the facesheets are assumed to be constructed of composite strips in a regular pattern. During the optimization process, both the widths of the ...
In this review, we demonstrate the developmental appearance, structural features, and reorganization of transient cerebral zones and structures in the human fetal brain using a correlative histological and MRI analysis. The analysis of postmortem aldehyde-fixed specimens (age range: 10 postovulatory weeks to term) revealed that, at 10 postovulatory weeks, the cerebral wall already has a trilaminar appearance and consists of: (1) a ventricular zone of high cell-packing density; (2) an intermediate zone; (3) the cortical plate (in a stage of primary consolidation) with high MRI signal intensity. The anlage of the hippocampus is present as a prominent bulging in the thin limbic telencephalon. The early fetal telencephalon impar also contains the first commissural fibers and fornix bundles in the septal area. The ganglionic eminence is clearly visible as an expanded continuation of the proliferative ventricular zone. The basal ganglia showed an initial aggregation of cells. The most ...
In diabetic patients with autonomic neuropathy, it is suggested that there is a reduced uptake of [sup 123]I-metaiodobenzylguanidine (MIBG) in the heart. We compared the difference of myocardial [sup 123]I-MIBG accumulation between 4 diabetic patients with triopathy and 6 patients without it. In all 10 patients, coronary angiography and [sup 201]Tl imaging (rest and 4 hours later) were performed. [sup 123]I-MIBG (111 MBq) was administered intravenously and its imaging was recorded on 15 minutes and 4 hours after injection. In all 4 cases with triopathy, [sup 123]I-MIBG imaging showed defect in apical and inferior region. In 2 out of 6 cases without triopathy, rapid clearance was noticed in apical and inferior region. There was no significant stenosis in right coronary artery and no defect in initial and delayed [sup 201]Tl images in all cases. We concluded that diabetic autonomic neuropathy in the heart was prominent in apical and inferior ...
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We ...
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We discuss possible ...
Experiments on the depth dependence of transient enhanced diffusion (TED) of boron during rapid thermal annealing of Ge-preamorphized layers reveal a linear decrease in the diffusion enhancement between the end-of-range (EOR) defect band and the surface. This behavior, which indicates a quasi-steady-state distribution of excess interstitials, emitted from the EOR band and absorbed at the surface, is observed for annealing times as short as 1 s at 900 deg. C. Using an etching procedure we vary the distance x{sub EOR} from the EOR band to the surface in the range 80-175 nm, and observe how this influences the interstitial supersaturation, s(x). The supersaturations at the EOR band and the surface remain unchanged, while the gradient ds/dx, and thus the flux to the surface, varies inversely with x{sub EOR}. This confirms the validity of earlier modelling of EOR defect evolution in terms of Ostwald ripening, and provides conclusive evidence that ...
Experiments on the depth dependence of transient enhanced diffusion (TED) of boron during rapid thermal annealing of Ge-preamorphized layers reveal a linear decrease in the diffusion enhancement between the end-of-range (EOR) defect band and the surface. This behavior, which indicates a quasi-steady-state distribution of excess interstitials, emitted from the EOR band and absorbed at the surface, is observed for annealing times as short as 1 s at 900 deg. C. Using an etching procedure we vary the distance x_E_O_R from the EOR band to the surface in the range 80-175 nm, and observe how this influences the interstitial supersaturation, s(x). The supersaturations at the EOR band and the surface remain unchanged, while the gradient ds/dx, and thus the flux to the surface, varies inversely with x_E_O_R. This confirms the validity of earlier modelling of EOR defect evolution in terms of Ostwald ripening, and provides conclusive evidence that the ...
We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant concentration which can be incorporated in the ...
Recently, various types of allogeneic skin substitutes including cultured epidermal substitute (CES), cultured dermal substitute (CDS), and cultured skin substitute (CSS), which are composed of keratinocytes and/or fibroblasts as the cellular component(s), have been used as biological wound dressings. In our study, the allogeneic CDS was prepared by plating fibroblasts on a spongy collagen. The clinical evaluation was conducted using fresh or cryopreserved allogeneic CDS. In 145 of our clinical cases, 95% (138/145) of various wounds were evaluated as achieving good or excellent results, including 96% (22/23) of deep dermal burns (DDB) and dermal burns (DB), 100% (53/53) of partial-thickness donor wounds, 91% (21/23) of traumatic skin defects, 100% (5/5) of pressure ulcers, 82% (9/11) of chronic skin ulcers, 100% (6/6) of coverage for debrided DB, and 92% (22/24) of coverage for autologous meshed graft. The results obtained in our study suggest that the allogeneic ...
The thermodynamics of the Sr-Si system is of fundamental importance for the understanding of eutectic modification of Al-Si alloys. At the same time, strontium silicides have recently been found to have potential applications in electronic devices. Renewed research efforts have led to a re-evaluation of the phase equilibria in this system, resulting in the discovery of previously undetected stable intermetallic compounds. In this work, we investigate the finite temperature thermodynamic properties of the stable (and metastable) Sr-Si intermetallics. The vibrational properties of the intermetallic compounds are calculated within harmonic theory, with quasi-harmonic corrections to account for the effects of thermal expansion. The total free energies of the compounds are computed considering vibrational and electronic contributions, as well as weak anharmonic corrections. The ground state of the system is predicted and compared to previous experimental and computational results. The ...
The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f{sub A}. Accurate knowledge of f{sub A} is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f{sub A} is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f{sub A} without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f{sub Sb}{le}0.012 and f{sub B}{ge}0.98 at temperatures of {approximately}800{degree}C, which are the strictest bounds reported to date. Our results are in agreement with a ...
The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f_A. Accurate knowledge of f_A is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f_A is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f_A without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f_S_b#<=#0.012 and f_B#>=#0.98 at temperatures of #approx#800 degree C, which are the strictest bounds reported to date. Our results are in agreement with a theoretical expectation that a ...
Magnesium alloys have replaced resins as a material for the components of electronic products such as cell phone and notebook personal computer mainly, because of their lightness and rigidity. Thin walls, a complicated shape, and high appearance quality are all needed in the external parts. Die-casting and injection molding are the main method of manufacturing magnesium alloy parts. The optimal cast conditions and mold design have been investigated in order that a few defects such as surface cracks and mold cavities in casting parts would be reduced. Instead of cast, plastic forming technologies such as warm drawing and hot forging have been developed to form thinner walls and less defects. Plastic formability of magnesium alloy in hot working is dependent on a grain size of material. The material with fine grains has advantage of being formed at high strain rate. The characteristics of forming processes of magnesium parts for Japanese home ...
The adverse effects and diagnostic accuracy of thallium-201 myocardial SPECT after intravenous infusion of adenosine triphosphate (ATP) were studied and compared with SPECT examinations with other type of loading. The subjects of the study were 147 patients with or without coronary artery disease, who underwent some type of loading SPECT and coronary arteriography (CAG) within 30 days. Myocardial ischemia was evaluated qualitatively in SPECT and was compared with CAG for the diagnostic accuracy of coronary artery disease. The degree of myocardial uptake defect was also calculated semiquantitatively using visual scoring method and compared with coronary artery severity score. The adverse effects occurred in 46.7% of ATP loading SPECT which was more frequent that DIP loading SPECT, but all of them were transient and mild. As for the diagnostic ability the ATP loading SPECT was as effective as other type of loading in qualitative interpretation, and the perfusion ...
The present work is to study effects of neutron irradiation on the structure of amorphous Pb_8_0 Si_2_0 and Pd_7_7_._5 Cu_6 Si_1_6_._5 alloys by using X-ray diffraction techniques. differential scanning calorimertry (DSC) and internal friction measurements. The irradiation will produce obvious changes in the pair correlation function g(r) and radial distribution function RDF (r). The increase of crystallization temperature (Tx) and enthalpy of two specimens were found by DSC measurements after irradiation. The results of internal friction measurement show that the internal friction of the irradiated Pd_8_0Si_2_0 alloy is higher than that of the unirradiated in the temperature range of Tdefects (p) and shear stress fluctuation defects (#iota#).
An overview is provided of an evolving atomistic and kinetic model of semiconductor growth that unifies the main features of strain relaxation in low and high lattice misfit heteroepitaxy. The model reveals a kinetic pathway for dislocation formation during growth with little or no energy cost at low misfits, thus providing a way out of the longstanding dilemma of too high dislocation nucleation energies predicted by classical theories of the equilibrium behavior of a fixed number of particles at low misfits. The essential kinetic process underlying the model are identified on the basis of comparison of the predictions of kinetic Monte-Carlo simulations of growth with real-time or in-situ data obtained in such experiments as reflection high-energy electron diffraction (RHEED) and scanning probe microscopy (SPM). Relative significance of these atomistic kinetic processes is shown to naturally lead to strain relaxation via defect initiation at low misfits while ...
Helically coiled tubes of steam generators (SG) in FBR are boundaries between sodium and water/steam. Therefore, to assure the integrity of tubes, it is necessary to inspect the tubes nondestructively for in service or after a sodium-water reaction accident. In order to make it possible to conduct in-service inspection of SG tubes, we have studied on eddy current probes and probe inserting methods. As for the probe inserting method, IHI designed a fluid driving type which consists of a model probe and signal cable with float balls and driven by air pressure force. Presented in this paper is the authors' report, which describes the fluid driving type as an effective method to insert an eddy current probe into helically coiled tubes. The outline of the test results is as follows: 1. It was possible to insert the probe into 65 meter length helically coiled tubes. 2. We could detected, as anticipated, a defect (outer circumferential wall thinning ...
Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like the crystal-amorphous transition ...
Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like the crystal-amorphous transition temperature and ...
Sputter-deposited tantalum (Ta) and reactively sputter-deposited Ta-nitride films were studied with respect to the passivation capability against copper (Cu) oxidation in thermal O{sub 2} ambient. A 200 {angstrom} Ta or Ta-nitride film was sputter-deposited on a 2,000 {angstrom} Cu film using a Ta target in an Ar/N{sub 2} gas mixture. With Ta passivation, Cu was not oxidized at temperatures up to 400 C, which can be further improved by using passivation of an amorphous Ta-nitride film deposited in an appropriate condition. The absence of long-range defects in the Ta-nitride film was presumably responsible for this improvement. However, sputtering-induced surface damage by excess N{sub 2} in the sputter gas mixture may reduce the passivation capability of Ta-nitride films. When the passivated Cu was oxidized, the Cu oxides always resided in the top surface region. That is, in the oxidation process, Cu diffused through the defects of the ...
The effects of neutron irradiation on the superconducting and normal state properties of alloys and compounds are presented. Particular emphasis is placed on the A-15 compounds where the effects of neutron irradiation on Tsub(c), Hsub(c_2), long range order parameter and lattice parameter are described. Large depressions (up to 80%) in Tsub(c) are observed for all the A-15 compounds studied with the exception of Mo_3Os where much smaller decreases in Tsub(c) are seen. Along with the decrease in Tsub(c) and increase in lattice parameter, the degree of long range order, as measured by X-ray and neutron diffraction, decreases. Also presented are the results of isothermal and isochronal anneals up to 900"0C. The unirradiated value of Tsub(c) can be restored by annealing, and for those systems where measurements have been made, recovery of the lattice parameter and order parameter also takes place. The effects observed in irradiated material, together with those observed in unirradiated but ...
Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si{sub 1-x-y}Ge{sub x}C{sub y} during 750{sup o}C inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes {l_brace}311{r_brace} defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C{sub i}C{sub s}) pairing reaction that successfully simulates carbon suppression ...
Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si_1_-_x_-_yGe_xC_y during 750"oC inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes #left brace#311#right brace# defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C_iC_s) pairing reaction that successfully simulates carbon suppression of boron TED at ...
PWR steam generators have suffered from a variety of degradation phenomena. This paper identifies the corrosion-related defects and their probable causes and suggests approaches to correct and prevent corrosive activity. In the attempt to solve the degradation problems, research programs have concentrated on modifying materials, stresses, and the chemical environment in both new and operating steam generators. The following corrosion-related defects have been studied: tube wastage, denting, primary side (ID) intergranular stress corrosion cracking (IGSCC), OD-initiated intergranular attack (IGA), pitting, and corrosion fatigue. Plants affected by wastage have greatly reduced their problem by adopting an all volatile treatment (AVT). In the case of denting, a less aggressive chemical environment is recommended. Primary side IGSCC responds to temperature reduction, stress relief, and material improvements, while flushing and boric acid addition ...
PWR steam generators have suffered from a variety of degradation phenomena. This paper identifies the corrosion-related defects and their probable causes and suggests approaches to correct and prevent corrosive activity. In the attempt to solve the degradation problems, research programs have concentrated on modifying materials, stresses, and the chemical environment in both new and operating steam generators. The following corrosion-related defects have been studied: tube wastage, denting, primary side (ID) intergranular stress corrosion cracking (IGSCC), OD-initiated intergranular attack (IGA), pitting, and corrosion fatigue. Plants affected by wastage have greatly reduced their problem by adopting an all volatile treatment (AVT). In the case of denting, a less aggressive chemical environment is recommended. Primary side IGSCC responds to temperature reduction, stress relief, and material improvements, while flushing and boric acid addition ...
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation loop were observed from ...
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and dislocation loop were observed from the ...
The inspection of PFR evaporator tubing, superheater and reheater tubing, and tube plate examinations, are described. Ferritic steel U tubes in the evaporator have been examined by an eddy current system operating at 400 kHz using flexible rotating probes. Surface defects as shallow as 0.1 mm can be detected and sized in the range 0.1 to 0.5 mm deep. An ultrasonic method is under development for wall thickness. Special test coil probes have been developed for examination of the type 316 stainless steel superheater and reheater tubing. Crack-life defects in the bore are detectable at approximately 10% wall thickness and 20% on the outside diameter. Tube plate examinations from the tube holes, have been conducted using eddy current probes which identify surface breaking cracks in the holes. For detecting curtain cracks between tube plate holes, ultrasonic compression wave probes have been used. (U.K.).
Computer programs have been written to allow the analysis of different types of eddy-current probes and their performance under different steam generator test conditions. The probe types include the differential bobbin probe, the absolute bobbin probe, the pancake probe and the reflection probe. The generator test conditions include tube supports, copper deposits, magnetite deposits, denting, wastage, pitting, cracking and IGA. These studies are based mostly on computed values, with the limited number of test specimens available used to verify the computed results. The instrument readings were computed for a complete matrix of the different test conditions, and then the test conditions determined as a function of the readings by a least-squares technique. A comparison was made of the errors in fit and instrument drift for the different probe types. The computations of the change in instrument reading due to the defects have led to an inversion'' ...
Magnetic imaging in the transmission electron microscope (TEM) has been used to examine submicron elements with the aim of discovering down to what element size complex domain patterns can form. The elements were squares, circles, triangles, and pentagons in the size range 100{endash}500 nm and were made from 36 nm Co films or 8 nm Ni{sub 80}Fe{sub 20} (NiFe) with in-plane magnetization. The magnetic domain structures in these elements were imaged at high resolution using the differential phase contrast imaging mode in a TEM. Nonuniform magnetization structures were seen in the images. Vortices were present at remanence in all shapes of 36-nm-thick Co elements down to 100 nm size and in circular NiFe elements down to 116 nm diameter. Triangular NiFe elements did not have a vortex state at remanence, instead the magnetization curved round within the element but did not achieve complete flux closure. In simulations of square and circular NiFe elements, it was found that ...
For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% ...
For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe"+, 360 keV He"+, and 180 keV H"+ simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% elongation) was maintained ...
Photorefractives, in general, are among the most promising materials solutions to real time optical correlation. Applications include military target recognition and civilian robotic vision. Crystals of sillenite structure photorefractives, Bi12XO20, where X equals Si, Ge, or Ti, have been grown by melt techniques and in the case of bismuth silicon oxide (BSO) and bismuth titanium oxide (BTO) by the hydrothermal method of high-temperature/high-pressure solution growth. The two growth methods are discussed and crystals grown by the two methods are compared in this paper. Optical absorption and TSC studies show that hydrothermal BSO is essentially free of the native antisite Bi defect which usually acts as a donor. These studies also show that the trap density is greatly reduced in hydrothermal material. Preliminary experiments show that hydrothermal BTO crystals have improved properties over melt grown samples. Al and P act as donors and acceptors respectively and ...
The effects of the dopants, Mg{sup 2+}, Sr{sup 2+}, Sc{sup 3+}, Yb{sup 3+}, Gd{sup 3+}, La{sup 3+}, Ti{sup 4+}, Zr{sup 4+}, Ce{sup 4+}, and Nb{sup 5+}, on the grain boundary mobility of dense Y{sub 2}O{sub 3} have been investigated from 1,500 to 1,650 C. Parabolic grain growth has been observed in all cases over a grain size from 0.31 to 12.5 {micro}m. Together with atmospheric effects, the results suggest that interstitial transport is the rate-limiting step for diffusive processes in Y{sub 2}O{sub 3}, which is also the case in CeO{sub 2}. The effect of solute drag cannot be ascertained but the anomalous effect of undersized dopants (Ti and Nb) on diffusion enhancement, previously reported in CeO{sub 2}, is again confirmed. Indications of very large binding energies between aliovalent dopants and oxygen defects are also observed. Overall, the most effective grain growth inhibitor is Zr{sup 4+}, while the most potent grain growth promoter is Sr{sup 2+}, both at ...
The effects of the dopants, Mg"2"+, Sr"2"+, Sc"3"+, Yb"3"+, Gd"3"+, La"3"+, Ti"4"+, Zr"4"+, Ce"4"+, and Nb"5"+, on the grain boundary mobility of dense Y_2O_3 have been investigated from 1,500 to 1,650 C. Parabolic grain growth has been observed in all cases over a grain size from 0.31 to 12.5 microm. Together with atmospheric effects, the results suggest that interstitial transport is the rate-limiting step for diffusive processes in Y_2O_3, which is also the case in CeO_2. The effect of solute drag cannot be ascertained but the anomalous effect of undersized dopants (Ti and Nb) on diffusion enhancement, previously reported in CeO_2, is again confirmed. Indications of very large binding energies between aliovalent dopants and oxygen defects are also observed. Overall, the most effective grain growth inhibitor is Zr"4"+, while the most potent grain growth promoter is Sr"2"+, both at 1.0% concentration.
The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments on irradiated p-Si containing B. The levels observed at E_c-0.23, E_v+0.29, and E_v+0.51 eV are assigned to B_iO_i, B_iC_s, and B_iB_sH_i respectively. B_iC_s is passivated by one H atom. Evidence for the existence of B_iC_s has implications for mechanisms involved in the suppression of transient-enhanced diffusion of boron in ion-implanted Si by C.
The formation kinetics of Pd_2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd_2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not only on the silicidation annealing temperature but also on the heating ramp-up rate and the presence of impurities. Fast ramp-up annealing was necessary to avoid defect formation, such as voids in the silicide film at the oxide interface, and to obtain a homogeneous silicide film containing only Pd_2Si phase. The most severe effect on the silicidation reaction, that is the increase in defect formation, was brought about by As predoping. The work function of the Pd_2Si FUSI gate was modulated by impurity pileup at the Pd_2Si/SiO_2 interface, as in the case of the NiSi FUSI gate. However, the work function shifted in the opposite direction to that of the NiSi FUSI gate for As, P, Sb, and BF_2. A wide ...
Increasingly stringent safety requirements governing the nuclear industry have made it essential to gain in-depth knowledge of the injuriousness of cracking phenomena in auxiliary and secondary nuclear power plant systems, and to devise methods of rapidly evaluating potentially injurious flaws. The Defect Injuriousness Diagnosis and Treatment Package (DIDTP) discussed in this paper was developed by Framatome, a French-based PWR builder, with this goal in mind. A general description is given of the DIDTP, which is made up of tables and nomographs illustrating the injuriousness of flaws liable to be encountered in the most severely loaded regions of plant systems. The basic principles underlying the DIDTP, together with computational methods and application procedure, are detailed. Two practical examples illustrating the use of the diagnostic system are presented, one applied to the main steam line, the other to gate valve wedges. The types of results obtained and ...
Although ultrasonic testing inspection technology and tools have improved significantly, there is still a need for more reliable detection, monitoring, and accurate sizing of crack-like and planar defects, complex corrosion damage, and detection of secondary features within deformed pipe. Ultrasonic two dimensional (2D) matrix phased array technology offers some unique advantages that make the technology promising for improving detection and sizing of pipeline flaws resulting from welding or from in-service damage. Ultrasonic modeling and simulation has been conducted to evaluate the detection and sizing capabilities of 2D matrix arrays for various pipeline inspection concepts. Simulations have been performed using both flexible and rigid array probes. Inspection concepts using rigid probes were evaluated for inspections from both the outside and inside pipe surfaces, while flexible probes were evaluated primarily for inspection from the outside surface when dents ...
In culture migrating and interacting amoeboid cells can form nematic liquid crystal phases. A polar nematic liquid crystal is formed if the interaction has a polar symmetry. One type of white blood cells (granulocytes) form clusters where the cells are oriented towards the center. The core of such an orientational defect (disclination) is either a granulocyte forced to be in an isotropic state or another cell type like a monocyte. An apolar nematic liquid crystal is formed if the interaction has an apolar symmetry. Different cell types like human melanocytes (=pigment cells of the skin), human fibroblasts (=connective tissue cells), human osteoblasts (=bone cells), human adipocytes (= fat cells) etc., form an apolar nematic liquid crystal. The orientational elastic energy is derived and the orientational defects (disclination) of nematic liquid crystals are investigated. The existence of half-numbered disclinations show that the nematic phase ...
The electrical transport taking place in the {mu}c-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO{sub 2} plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic {mu}c-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n){mu}c-Si/oxide/(p){mu}c-Si and (b) (n){mu}c-Si/(i){mu}c-Si/(p){mu}c-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) {mu}c-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel junction. The optimisation of this ...
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter extractions have ...
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter ...
Since bearing is in wide use as basic parts for rotary machines, detection and diagnosis of its defects are important in practical use. To discriminate defect portions by early detection of roller bearing flaking, the conventional parameter method using peakedness is poor. Thus to directly obtain difference in waveform, the new method was applied to such detection which uses KDI as the scale of a difference in waveform, and a most neighborhood classification rule based on KDI. The detection and discrimination abilities of this method was studied mainly in experiment. The experiment used a bench scale rotor and a supporting bearing, and attempted detection and discrimination of no flaking, outer ring flaking and inner ring flaking. As a result, this method could detect and discriminate fine flaking which was never detected by conventional method. Since selection of standard data is essential for this method, a distance ratio was introduced as ...
As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing ...
Heat transfer tubes of a primary pressurized water cooled (PPWC) in the high temperature engineering test reactor (HTTR) form the reactor pressure boundary of the primary coolant, therefore are important from the viewpoint of safety. To establish inspection techniques for the heat transfer tubes of the PPWC, an automatic inspection system was developed. The system employs a bobbin coil probe, a rotating probe for eddy current testing (ECT) and a rotating probe for ultrasonic testing (UT). Nondestructive test of a half of the heat transfer tubes of the PPWC was carried out by the automatic inspection system during reactor shutdown period of the HTTR (about 55% in the maximum reactor power in this paper). The nondestructive test results showed that the maximum signal-to-noise ratio was 1.8 in ECT. Pattern and phase of Lissajous wave, which were obtained for the heat transfer tube of the PPWC, were different from those obtained for the artificially defected tube. In ...
The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)
The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged phosphorus-interstitial pairs agree well with the obtained experimental results. {copyright} 2001 ...
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
A study was made into microstructure and hardening in austenitic stainless steel 0Kh18N10T irradiated with neon ions (230 MeV) and neutrons (E_n > 0.1 MeV). The experiments were accomplished using an external beam of U-400 cyclotron (Dubna) and EWA reactor (Poland). The dependences of tensile properties, hardening index, microstructure, dislocation density on damaging dose were determined. An attempt is made to reveal the correlation between an yield strength increment and defect cluster accumulation. The interpretation of variations of mechanical properties and microstructure under irradiation is given.
The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.
We have performed molecular dynamics simulations of radiation damage in fused silica. In this study, we discuss the role of successive cascade overlap on the saturation and self-healing of oxygen vacancy defects in the amorphous fused silica network. Furthermore, we present findings on the topological changes in fused silica due to repeated energetic recoil atoms. These topological network modifications consistent with experimental Raman spectroscopic observation on neutron and ion irradiated fused silica are indicators of permanent densification that has also been observed experimentally.
We compute the entropy of a closed bounded region of space for pure 3d Riemannian gravity formulated as a topological BF theory for the gauge group SU(2) and show its holographic behavior. More precisely, we consider a fixed graph embedded in space and study the flat connection spin network state without and with particle-like topological defects. We regularize and compute exactly the entanglement for a bipartite splitting of the graph and show it scales at leading order with the number of vertices on the boundary (or equivalently with the number of loops crossing the boundary). More generally these results apply to BF theory with any compact gauge group in any space-time dimension.
The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 deg. C was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches.
Intraspinal synovial cysts were diagnosed in six patients during a 5-year period and retrospectively studied. Plain films of the lumbar spine showed degenerative changes in all patients. Lumbar myelography showed a posterior and lateral defect caused by extradural compression. Using CT without contrast enhancement established the diagnosis in five of the six patients. In four cases MRI was performed, three before and after injection of gadolinium diethyline-triamine penta-acetic acid (Gd-DTPA). Including the patient with a false-negative CT, MRI was positive in all patients. (orig.)
A review of the performance of steam generator tubes in 116 water-cooled nuclear power reactors showed that tubes were plugged at 54 (46 percent) of the reactors. The number of tubes removed from service decreased from 4 692 (0.30 percent) in 1981 to 3 222 (0.20 percent) in 1982. The leading causes of tube failures were stress corrosion cracking from the primary side, stress corrosion cracking (or intergranular attack) from the secondary side and pitting corrosion. The lowest incidence of corrosion-induced defects from the secondary side occurred in reactors that have used only volatile treatment, with or without condensate demineralization.
A discussion of some of the difficulties with previous analyses of the resistivity of A-15 compounds is given. Precise high-temperature data on ..cap alpha..-particle- and electron-damaged Nb/sub 3/Ge and Nb/sub 3/Sn samples with different defect concentrations are presented here and analyzed in a simple way with use of a phenomenological model based on the idea that the ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing.
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).
Seeking effective methods is one of the most important goals in machinery fault diagnosis. The effective methods for gear fault diagnosis have been successively developed in our Institute. This paper is a comprehensive treatise based on our research work of recent years. A mathematical model of vibration signals for defective gears is physically described. Five effective new methods for gear fault diagnosis, such as zoom complex envelope analysis, wideband demodulation technique, bispectrum analysis, correlative spectrum analysis, and maximum entropy spectrum analysis for phase modulated signals, are summarily presented. The listed illustrations prove sufficiently the validation of these methods.
Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.
Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.
The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
Cr_2O_3 scales are found to form on Alloy 800 and a similar pure ternary alloy in air, and 1 and 50 atm. helium containing oxidizing impurities typical of those in an SGHTR. The strong temperature dependence and neglibible helium overpressure dependence indicate that gas transport through the scales is not rate controlling. Surface oxidation rates are therefore controlled by solid state diffusion and the low oxygen partial pressure dependence of the oxidation rate in Alloy 800 is ascribed to the presence of extrinsic defects in the Cr_3O_3 (due to doping by alloying elements) or to the presence of short circuit diffusion paths. (Auth.).
The damage induced by low-temperature proton irradiation in amorphous Pd/sub 80/Si/sub 20/ prepared by ion implantation is studied via electrical resistivity measurements. Our experimental results concerning the initial damage rate and the resistivity saturation are compared to the results obtained for electron and high energy /sup 16/O irradiation of amorphous Pd/sub 80/Si/sub 20/ quenched from the melt. The resistivity curve is analyzed in terms of irradiation-induced point defects.
The production of many important commercial materials involves the evolution of a complex fluid through a cooling phase into a hardened product. Textile fibers, high-strength fibers(KEVLAR, VECTRAN), plastics, chopped-fiber compounds, and fiber optical cable are such materials. Industry desires to replace experiments with on-line, real time models of these processes. Solutions to the problems are not just a matter of technology transfer, but require a fundamental description and simulation of the processes. Goals of the project are to develop models that can be used to optimize macroscopic properties of the solid product, to identify sources of undesirable defects, and to seek boundary-temperature and flow-and-material controls to optimize desired properties.
This article discusses the Daya Bay nuclear power plant in-core flux thimble tube in-service inspection method and strategy. High light of the multiple frequency eddy current technology adopted including frequency and probe choice, standard design, data acquisition process are involved. The wear defect-growing trends are studied on base of the history data, which contribute to the in-service inspection strategy decision. (authors)
A 1.5-year-old male Belgian Malinosis Military Working Dog presented with a 1-month history of intermittent hematuria. Diagnostic ultrasound and contrast radiography demonstrated large blood clots in the urinary bladder and a filling defect in the right renal pelvis. At surgery, clotted blood was present in the right ureter and bladder. Following right nephrectomy, the dog returned to training. One month later, elevations in urea nitrogen and creatinine were noted. Hematuria recurred at 3 months and the dog was found dead in its kennel. Necropsy showed a blood-filled left renal pelvis and ureter. PMID:1454185
The microstructure and mechanical properties of a specimen HIPped at 1100 C under 60 ksi were examined. The examinations indicated that the proper HIPping temperature for this material should be higher than 1100 C. New recipe of monolithic material was developed and presented better extrusion homogeneity and less binder removal defects. However, cracking still occurred in specimens although very slow heating rate of 0.25 C/min for binder burnout was used.
Experimental results on study of helium concentration influence on degree of molybdenum radiation hardening for various method of cyclotron doping differing in degree and damage character are presented. It is established that accumulation of helium atoms in molybdenum for simultaneous formation of radiation defects caused by low energetic primary-knocked atoms leads to higher degree of hardening than for high energetic ion irradiation. It is shown that with increase of helium atom concentration the degree of radiation hardening for the same level of damage increases. 4 refs.; 3 figs. (author).
Evaluation of grain boundary composition and structure in superplastically deformed AA5083-based alloys (Al-4.5Mg-1.6Mn-0.2Zr) was carried out in a field-emission gun transmission electron microscope (FEG-TEM). During superplastic deformation at high homologous temperatures materials undergo extensive grain boundary sliding (GBS) which creates a flow of defects in the near-boundary region. Recent literature has shown that the grain-boundary composition in Al-Mg alloys is not necessarily the same as the matrix, and that these differences can have an effect on GBS.
Full text of publication follows: Li{sub 2}TiO{sub 3} is regarded as one of the most suitable candidates for the solid tritium breeder material of D-T fusion reactors. It is known that, in an operating fusion reactor, the radiation damage in Li{sub 2}TiO{sub 3} will be caused by fast neutrons, energetic tritons and helium ions generated in {sup 6}Li(n,{alpha}){sup 3}H reaction. The irradiation damage caused by such radiation may result in the microstructural changes, and the changes may affect the characteristics of Li{sub 2}TiO{sub 3} such as tritium release behavior. Thus the study of irradiation defects and microstructural changes caused by irradiation in Li{sub 2}TiO{sub 3} is essential to evaluate its irradiation performance. Simulation of the fusion reactor environment and hence the study of a synergistic effect of atomic displacement damage in Li{sub 2}TiO{sub 3} are approached by a simultaneous irradiation with 'triple' ion beams which ...
The electrolyte was brought into contact with air and potassium carbonate was measured with various contact time in order to check the defect of carbon dioxide in the air on zinc-air cell. The relationship between potassium carbonate concentration in electrolyte and battery capacity was also studied. The potassium carbonate concentration in the electrolyte. The rate of carbon dioxide absorption was mainly affected by the pore size of hydrophobic membrane. Our study showed that adapting the pore of hydrophobic membrane decreased the loss of cell discharge performance due to the presence of carbon dioxide or water vapor in the atmosphere. 7 refs., 12 figs., 1 tab.
A statistical evaluation of rotor blade damage in axial steam turbines affords an insight into the extent of the repair costs incurred and reveals the types of defects and shortcomings which cause such damage. The great amount of rotor blade damage discovered during control inspections will surprise even many turbine experts. The statistical evaluation is followed by a review of the more frequent causes of damage and their characteristic features, illustrated on the basis of practical examples. This contribution is intended as an aid to both the manufacturers and operators of steam turbines in preventing the oft almost classic types of faults which constantly recur. (orig.).
Full text of publication follows: Understanding the dynamic irradiation effects on silica glasses is important for developing the diagnostic systems used in fusion and fission environments. While fundamental defects having an un-pared electron such as the E' center have been extensively studied, the neutral oxygen deficiency defects have been insufficiently clarified for lack of the detection methods. The ion induced luminescence is one of the probes that can be used to detect non-paramagnetic defects, and to observe creation and annihilation behavior dynamically. In the present study, we examined the characteristics of the ion induced luminescence such as energy, fluence flux and temperature dependence of the luminescence efficiency to analyze damage process quantitatively. Samples of SiO2 glasses were commercially available fused and synthesized silica glasses, produced by Toshiba Ceramics, Co. Ltd.. A thin films of SiO2 ...
The paper provides a brief description of the fuel characterization for Fast Breeder Test Reactor (FBTR) and Prototype Fast Breeder Reactor (PFBR). The development and characterization of mechanical properties of Alloy D9 clad and wrapper tubes are discussed. The problems associated with fusion welding of Alloy D9 are outlined. Non-destructive characterization of cladding tubes by optimum encircling eddy current probes, on-line and off-line neural network methods is presented. Both the on-line and off-line neural network methods could readily detect and size defects specified by the designers
This is the final report covering work performed on research into methods of attaining clean ferrous castings. In this program methods were developed to minimize the formation of inclusions in steel castings by using a variety of techniques which decreased the tendency for inclusions to form during melting, casting and solidification. In a second project, a reaction chamber was built to remove inclusions from molten steel using electromagnetic force. Finally, a thorough investigation of the causes of sand penetration defects in iron castings was completed, and a program developed which predicts the probability of penetration formation and indicates methods for avoiding it.
A chromatographic technique is described for checking the condition of cable insulation by analyzing cable oil for the gases that are typical of defects in power transformers: carbon dioxide, acetylene, methane and ethylene. This technique was successfully used for predicting breakdown of insulation on KL-2 cable at one of the hydroelectric plants of Kirgizglavenergo power grid 1.5 months in advance. The presence of the above-mentioned gases in cable oil can provide a signal for monitoring the state of cable insulation. Further research is needed in addition to more operational experience to work out criteria for objective evaluation of the state of cable lines.
The study is concerned with the combined effect of high pressure and shear strain on the properties of the A-15 intermetallics Nb3Sn and Nb3Al0.75Ge0.25. The properties discussed are the superconducting transition temperature, the width and intensity of the X-ray diffraction lines, and the width and shape of the Mossbauer absorption lines. It is shown that the combined effect of high pressure and shear strain leads to an intense generation of defects in polycrystalline specimens; the size of the ordered regions does not exceed 300 A even under the least severe conditions. 5 references.
A simplified relativistic configuration interaction method is used to study the dielectronic satellite transition processes. In this method, the infinite resonant doubly excited states can be calculated, and furthermore, the whole high-n dielectronic satellite transition processes can be treated conveniently by interpolation (rather than extrapolation) in the frame of quantum defect theory. As an example, we calculate the contributions from high-n dielectronic satellites to the K{alpha} resonance line in helium-like iron, and the results are in good agreement with the experimental measurements. (orig.) 39 refs.
A solid electrolytic capacitor having a solid electrolyte comprising manganese dioxide dispersed in an aromatic polyamide capable of further cure to form polyimide linkages, the solid electrolyte being disposed between a first electrode made of valve metal covered by an anodic oxide film and a second electrode opposite the first electrode. The electrolyte autogenously produces water, oxygen, and hydroxyl groups which act as healing substances and is not itself produced pyrolytically. Reduction of the manganese dioxide and the water molecules released by formation of imide linkages result in substantially improved self-healing of anodic dielectric layer defects.
The results and techniques of radiographic study on solidification of iron and steel mould castings are described. The study was made to determine the causes of the mold castings defects. The liquid metal is either labelled in the ladle, or relabelled inside the mould in present time intervals. In the former case, the radioactive phosphorus is segregated in the last-solidifying casting locations, and in the latter, the radioactive phosphorous is distributed along the solid-liquid interface at the time of the next addition in turn. The solidification process parameters may be arrived at by the autoradiograms taken in the pipe-sensitive casting sections. Using these data it is possible to proceed to the proper modifications in the steel casting process.
Photocurrent measurements for stainless steel type 304 in the as-received condition after dc and AV (alternating voltage) passivation have confirmed that significant changes of the passive film properties occur due to AV passivation. The photocurrents were the highest for the sample treated by the AV passivation process (AVPP). The bandgap energy increased from about 2.8 to about 3.05 eV for this treatment. Very similar results have been obtained for pure chromium, which suggests that the AVPP produces a thicker passive film with a less defective nature due to a partial dehydration of the chromium oxide phase in the film.
Bone is a complex, highly structured, mechanically active, three-dimensional (3-D) tissue composed of cellular and matrix elements. We previously published a report on in situ collagen gelation using a rotary 3-D culture system (CG-RC system) for the construction of large tissue specimens. The objective of the current study was to evaluate the feasibility of bone tissue engineering using our CG-RC system. Osteoblasts from the calvaria of newborn Wistar rats were cultured in the CG-RC system for up to 3 wk. The engineered 3-D tissues were implanted into the backs of nude mice and calvarial round bone defects in Wistar rats. Cell metabolic activity, mineralization, and bone-related proteins were measured in vitro in the engineered 3-D tissues. Also, the in vivo histological features of the transplanted, engineered 3-D tissues were evaluated in the animal models. We found that metabolic activity increased in the engineered 3-D tissues during cultivation, and that ...
Conventional eddy current bobbin probes are known to be ineffectual in detecting circumferential cracks in tubing. Multi-pancake and/or rotating pancake probes are required to detect circumferential cracks. It has recently been demonstrated in CANDU steam generator tubes, with deformation, ferromagnetic deposits, and copper deposits, that multi-channel probes with transmit-receive (T/R) coils are superior to those using surface impedance coils. Unlike rotating probes, the design of a new probe denoted as C3 permits fast, single-scan inspection of a full-length tube at inspection speeds comparable to conventional bobbin probes. Since 1992, the probe has been used routinely for steam generator in-service inspection at 4 CANDU plants. Defective tubes have been plugged and the units returned to service, and they continue to operate without leaks. This paper describes the basic features of T/R surface probes. Two-dimensional voltage diagrams showing computer-derived ...
Conventional eddy current bobbin probes are known to be ineffectual in detecting circumferential cracks in tubing. Multi-pancake and/or rotating pancake probes are required to detect circumferential cracks. It has recently been demonstrated in CANDU steam generator tubes, with deformation, ferromagnetic deposits, and copper deposits, that multi-channel probes with transmit-receive (T/R) coils are superior to those using surface impedance coils. Unlike rotating probes, the design of a new probe denoted as C3 permits fast, single-scan inspection of a full-length tube at inspection speeds comparable to conventional bobbin probes. Since 1992, the probe has been used routinely for steam generator in-service inspection at 4 CANDU plants. Defective tubes have been plugged and the units returned to service, and they continue to operate without leaks. This paper describes the basic features of T/R surface probes. Two-dimensional voltage diagrams showing computer-derived ...
Cockayne syndrome (CS) is a rare autosomal recessive disease, which shows diverse clinical symptoms such as photosensitivity, severe mental retardation and developmental defects. CS cells are hypersensitive to killing by ultraviolet (UV)-irradiation and defective in transcription-coupled repair. Two genetic complementation groups in CS (CS-A and CS-B) have been identified. We analyzed mutations of the CSA gene in 5 CS-A patients and identified 3 types of mutations. Four unrelated CS-A patients (CS2OS, CS2AW, Nps2 and CS2SE) had a deletion including exon 4, suggesting that there is a founder effect on the CSA mutation in Japanese CS-A patients. Patient CS2SE was a compound heterozygote for this deletion and an amino acid substitution at the 106th glutamine to proline (Q106P) in the WD-40 repeat motif of the CSA protein, which resulted in a defective nucleotide excision repair. Patient Mps1 had a large deletion in the ...
Airbag pressure vessels for the north-American market mainly are made by forging and by the use of steel alloys. In Europe aluminum alloys are common and the manufacturing process is extrusion of circular blanks - made from cold rolled plates - in a form applying a 100 t press at room temperature. Then by heat treatment the strength/hardness of the material is properly adjusted and after that the pressure vessel parts have to be continuously inspected with an inspection and handling cycle time of 3 s. Inspection of the axis-symmetric parts is asked for surface breaking extrusion defects as well as for surface parallel delaminations in the bulk volume. Furthermore, the material strength is a quality characteristic that has to be nondestructively registered and documented. The inspection is performed by eddy current probes and an EMAT, of which the eddy current impedance measurements are used for surface breaking extrusion defect detection and ...
Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the resulting damage microstructure at 1100K ...
The reconstruction of segmental defect in long bone is a clinical challenge. Multiple surgeries are typically required to restore the structure and function of the affected defect site. In order to overcome this defect a biodegradable bone tissue engineering scaffold is used. This scaffold acts as a carrier of proteins and growth factors, while also supporting the load that the bone would normally sustain, until the natural bone can regenerate in its place. Work was done to optimize an existing solid free-form scaffold design. The goal of the optimization was to increase the porosity of the scaffold while maintaining the strength of a previously-tested prototype design. With this in mind, eight new designs were created. These designs were drawn using CAD software and then through the use of finite element analysis the theoretical ultimate compressive strength of each design was obtained. Each scaffold design was constructed ...
Neuronal transcription factors play vital roles in the specification and development of neurons, including dopaminergic (DA) neurons. Mutations in the gene encoding the purine biosynthetic enzyme hypoxanthine-guanine phosphoribosyltransferase (HPRT) cause the resulting intractable and largely untreatable neurological impairment of Lesch-Nyhan disease (LND). The disorder is associated with a defect in basal ganglia DA pathways. The mechanisms connecting the purine metabolic defect and the central nervous system (CNS) phenotype are poorly understood but have been presumed to reflect a developmental defect of DA neurons. We have examined the effect of HPRT deficiency on the differentiation of neurons in the well-established human (NT2) embryonic carcinoma neurogenesis model. We have used a retrovirus expressing a small hairpin RNA (shRNA) to knock down HPRT gene expression and have examined the expression of a number of ...
Full text of publication follows: The effect of neutron irradiation on the thermal conductivity of silicon carbide can be dramatic depending on the irradiation temperature and fluence the material is subjected to, and may be a critical factor defining it's use in fusion systems. Historically there have been several papers describing the effect of neutron irradiation on thermal conductivity degradation of SiC, predominately in the low to intermediate temperature ranges. Practically all of this work has been at temperatures lower than the application temperature for SiC being considered by the conceptual fusion reactors. This paper provides new data on the thermal conductivity of high quality CVD silicon carbide irradiated in a range of doses and temperature spanning the proposed fusion reactor temperature range. Specifically, an irradiation was carried out from fractions milli-dpa to approximately 8 dpa in the HFIR with irradiation temperatures ranging from 80-1600 deg. C. Results of ...
January, 1992, to October, 1995, sixty-four patients with advanced head and neck cancer underwent head and neck reconstructive surgery using myocutaneous or revascularized flaps; in the same period, all patients were consecutively examined with CT and MRI. Myocutaneous flaps were used in 26 patients: 12 flaps were tubular and 14 linear. Revascularized flaps were used in 38 patients: to repair a large defect in 26 patients (14 latissimus dorsi flaps and 12 temporal muscle flaps) and to repair an oral damage in 12 patients (5 revascularized radial and 7 jejunal flaps). CT and MR images of myocutaneous flaps showed the flaps as fatty areas, repairing large surgical defects, hypodense at CT and hyperintense at MRI, with no post-contrast enhancement. The appearance of revascularized flaps at CT and MRI depends on the characteristics of the structure used to repair the surgical defect: jejunal and radial flaps appeared as mostly ...
January, 1992, to October, 1995, sixty-four patients with advanced head and neck cancer underwent head and neck reconstructive surgery using myocutaneous or revascularized flaps; in the same period, all patients were consecutively examined with CT and MRI. Myocutaneous flaps were used in 26 patients: 12 flaps were tubular and 14 linear. Revascularized flaps were used in 38 patients: to repair a large defect in 26 patients (14 latissimus dorsi flaps and 12 temporal muscle flaps) and to repair an oral damage in 12 patients (5 revascularized radial and 7 jejunal flaps). CT and MR images of myocutaneous flaps showed the flaps as fatty areas, repairing large surgical defects, hypodense at CT and hyperintense at MRI, with no post-contrast enhancement. The appearance of revascularized flaps at CT and MRI depends on the characteristics of the structure used to repair the surgical defect: jejunal and radial flaps appeared as mostly ...
Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated amorphous silicon has a 1 digit lower defect density than the conventional one of amorphous silicon, as revealed ...
An essential issue in gallium (Ga)-stabilized fcc-phase plutonium ({delta}-Pu) is the formation of helium (He) voids and bubbles emanating from the radiolytic decay of the Pu. The rate of formation of He voids and bubbles is related to the He-defect formation energies and their associated migration barriers. The size and shape distributions of the bubbles are coupled to these critical migration processes. The values of the defect formation energies, internal pressure, and migration barriers can be estimated from atomistic calculations. Complicating this picture is the destruction of He-filled voids and bubbles by subsequent radiolytic decay events. The present study concerns the construction of the necessary potential energy surfaces for the Pu-He and He-He interactions within the modified embedded atom method (MEAM). Once fully tested, the potentials will be used to estimate the He-defect formation energies and barriers to ...
A cooperative effort of the Center for Solar Energy and Hydrogen Research (ZSW) and Phototronics Solartechnik GmbH (PST) aimed at the transfer of highly efficient solar cells developed on a laboratory scale, to large-area thin-film solar modules suitable for production. This work was based on research and development at the Institute for Physical Electronics (IPE) of Stuttgart University and ZSW on one hand, and on the know-how of PST in regard to large-area module fabrication on the other hand. The various thin-film layers of the cells and modules comprize molybdenum as rear contact, copper-indium(gallium)-diselenide (CIGS) as absorber material, the combination of cadmium sulphide (CdS) and ZnO as window layer. To produce these layers on large areas (30x30 cm{sup 2}), equipment was constructed and procedures were developed. Monolithic series connection of cells, used in other thin-film technologies, was studied and optimized by suitable patterning procedures, such as laser-scribing, ...
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for high-speed application ...
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for high-speed application requires the scaling down ...
Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the range of the fluorine implant and the ...
An historic Strontianite-type specimen from Strontian, Scotland, UK, was characterized to broaden our knowledge on luminescence properties of common carbonates. These fibrous aggregates are Strontianite (Sr{sub x}Ca{sub 1-x}CO{sub 3}) with circa 6% of CaO, interfacial water, hydrosilicate anions and substitutional divalent cations, e.g., Ca{sup 2+}, Mn{sup 2+}, Fe{sup 2+} in structural Sr{sup 2+} positions. The specimen was analyzed by X-ray Fluorescence Spectrometry (XRF), Environmental Scanning Electron Microscopy coupled with an Energy Dispersive X-ray Spectroscopy (ESEM-EDS) probe, Spatially-resolved Cathodoluminescence under the Scanning Electron Microscope (SEM-CL), Differential-Thermal Analyses (DTA), Thermogravimetry (TG), Thermoluminescence (TL), Radioluminescence (RL) and High Resolution Spectra Thermoluminescence (3DTL), to gain an overview of the spectral emissions, the defect linkages were modified by heating from room temperature (RT) up to 500 deg. ...
The Wendelstein 7-X (W7-X) modular stellarator is under construction at the Max-Planck-Institut fur Plasmaphysik in Greifswald, Germany. The W7-X magnet system contains 70 coils made up from helium cooled superconducting cables in aluminium alloy (EN AW-6063) jackets. Several hundred connections of the jacket to the cable joints are made by aluminium-to-aluminium welds. Due to geometrical and thermal boundary conditions these welds cannot be accomplished free from defects. Microscopic analyses of the welds show that a variety of small flaws such as cracks and pores develop during welding. The welds have thus to be dimensioned accordingly, and appropriate weld qualification, investigation and testing has to be done in order not to jeopardise the structural integrity and leak tightness. The ...
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
Autoionizing and Auger transitions in atomic manganese and samarium have been experimentally investigated by observation of the ejected electrons in the energy region 0 to 40 eV following electron impact excitation with incident beams in the energy range 15-500 eV. Seventy-four spectral features are tabulated for manganese and a number of new assignments have been made based on pseudo-relativistic Hartree-Fock calculations and quantum defect analysis. A similar study of samarium reveals only a number of broad features in the ejected-electron energy range 8-10 eV. Three features have been observed consistently in the ejected-electron spectrum of samarium and assigned by comparison with previous work. (author).
In previous work, on cooling from 300 K to 10 K the elastic moduli for both #alpha#- and #delta#-Pu dropped 30%. This large change may reflect effects of 5f-electron localization. In this work, the elastic moduli at ambient temperature of several Pu-Ga alloys were measured using resonant ultrasound spectroscopy (RUS). The strong temperature dependence of the bulk and shear modulus and the temperature independence of Poisson's ratio was confirmed and the upper temperature limit for #alpha#-Pu was extended to 360 K. Measurements of the time dependence of the shear moduli of Pu and Pu-2.36 at.% Ga were determined with high precision as a function of time and temperature. Using a model for time dependence of point defects, we determined the exponential time constant at ambient temperature for such variations. The low temperature results are consistent with Fluss .
The purpose of this study is to evaluate the synergistic effect of helium and hydrogen on Fe-Cr ferritic model alloys, to provide basic understanding concerning development of fusion reactor components. Single, dual and triple ion-beams consisting of Fe{sup 3+}, He{sup +} and H{sup +} were used for irradiation, at temperatures 470-600 deg. C and dose to 50 dpa at 1 {mu}m. The dual beam irradiation with He enhanced cavity nucleation extensively to swelling of about 0.4%, whereas the dual beam irradiation with H did not significantly affect the microstructure. In the case of triple ion irradiation, the synergistic effect of He and H was confirmed clearly; relative large void formation and enhanced swelling to almost 5%. The synergistic effect suggests that the role of H is important for void growth and dislocation bias.
Specimens of glassy Pd{sub 80}Si{sub 20} were irradiated at temperatures below 100K with 3.5 MeV krypton ions. After irradiation, changes in the sound velocity were measured at 80 K without warm-up by Brillouin scattering. The sound velocity decreased with increasing ion fluence and exponentially approached a saturation value of -4.7%. The change in the shear elastic modulus per unit concentration n of defects was estimated to be d(ln C)/dn = -9.4 to -4.7. The results of the present study are compared with changes in the elastic properties predicted recently by an interstitialcy model for glassy metals, and with the elastic properties of glassy metals after thermal treatment.
The X-ray storage phosphor CsBr:Eu2+ in form of needle image plates is believed to be a promising alternative to the granular BaFBr:Eu2+ with regard to PSL yield and spatial resolution. Unfortunately, CsBr:Eu2+ exhibits poor radiation hardness, which is caused by a migration of europium ions initiated by naturally existing defect centers like (Eu2+-VCs)-centers and X-ray generated MEu-centers. It will be shown that the formation of (Eu2+-O2?)-dipoles at the expense of (Eu2+-VCs)-dipoles, incorporated by thermal annealing in O2-containing and humid atmosphere, does not improve the radiation stability. There is, however, a strong improvement in the radiation hardness by codoping of CsBr:Eu2+ with lithium ions, which is accompanied by a complete suppression of the previously observed MEu-cent...
Object: To permit a valve operation test to be periodically made during plant operation without causing variations in plant power by detecting flow control valve defect on the basis of a valve aperture alteration instruction. Structure: Step signals which are equal in absolute value and opposite in sign are coupled to the input side of flow controllers provided on the recycling loops of two or more recycling flow control systems. With these inputs the aperture of the flow control valve on one side is increased (or reduced) while the aperture of the valve on the other side is reduced (or increased). As a result, the recycling flow rate in the loop on one side is increased (or reduced) while that on the other side is reduced (or increased). Whether the valve is normally operating or not is confirmed by checking the recycling flow rate and valve aperture. (Nakamura, S.).
Even though the currently intensive research efforts on high- temperature superconducting materials have not yet converged on a well specified practical material, the indications are that such a material may be quite brittle, anisotropic, and may contain many flaws such as microcracks and voids at grain boundaries. Consequently, practical applications of high temperature superconducting materials will require a very careful strength analysis based on fracture mechanics considerations. Because of the high sensitivity of the strength of such materials to the presence of defects, methods of quantitative non-destructive evaluation may be expected to play an important role in strength determinations. This proposal is concerned with the use of ultrasonic methods to detect and characterize isolated cracks, clusters of microcracks and microcracks distributed throughout the material. Particular attention has been, and will continue to be devoted to relating ultrasonic ...
Serious complications due to coronary artery fistulae have been described. Most authors recommend early intervention at the time of diagnosis. We present a case of a fistula originating from a dilated left coronary artery and draining into the right atrium, which was diagnosed prenatally by color Doppler echocardiography. During pregnancy, the echocardiographic findings remained unchanged, and there were no signs of heart failure. After birth, the fistula was confirmed by angiography. Additionally, a persistent left superior vena cava draining into the coronary sinus and a very small ventricular septal defect were detected. The fistula was closed successfully by transcatheter coil embolization. At 17 months old the child was in good clinical condition. Prenatal diagnosis of coronary artery fistulae may be possible and may improve perinatal management and outcome. PMID:12047543
Opinion statement Because a minority of patients with D-transposition of the great arteries are diagnosed in utero by ultrasound, most present after delivery with cyanosis. In the absence of apparent lung disease, cyanotic neonates suspected of having a cardiac lesion should be immediately transferred to an intensive care unit at a pediatric tertiary care center for monitoring, resuscitation, and to define the cardiac anatomy and physiology. A prostaglandin E-1 infusion is usually initiated to maintain ductal patency and promote intra-cardiac mixing. In the past, balloon atrial septostomy (BAS) was routinely performed to enlarge the atrial septal defect and improve intra-cardiac mixing while the infants awaited surgery. Recent literature has reported an increase risk of stroke in neonates ...
High-level expression of mitotic arrest defective protein 2 (MAD2), a central component of the spindle assembly checkpoint, has been observed in a variety of human malignancies. Aim of the present study was to observe the expression of MAD2 in human non-small-cell lung cancer (NSCLC) and explore its clinicopathologic significance and evaluate MAD2 expression as a prognostic marker. MAD2 transcript was found to be overexpressed in the great majority of lung cancers by semi-quantitative RT-PCR. A total of 358 NSCLCs were analyzed immunohistochemically on tissue microarrays. High-level MAD2 expression was observed in 26.3% (94 of 358 cases), and correlated with male sex (P=0.0002), tumor progression (pT status) (P=0.0009), visceral or parietal pleural invasion (P=0.0151), non-adenocarcinoma, ...
The irradiation behavior of Li{sub 2}TiO{sub 3} under a fusion reactor environment was simulated by simultaneous irradiation of Li{sub 2}TiO{sub 3} by the triple ion beams and the respective single ion beams of O{sup 2+}, He{sup +} and H{sup +}. The microstructural changes in Li{sub 2}TiO{sub 3} caused by the irradiation were measured by Raman spectroscopy and FT-IR photoacoustic spectroscopy. The results suggest that the formation of TiO{sub 2} due to displacements by irradiation occurs, and the irradiation defects generated by irradiation trap hydrogen and increase the amount of hydroxyl near the surface. Such phenomena are believed to significantly affect the chemical form of the released tritium and the tritium inventory in the breeding materials of a fusion reactor.
The irradiation behavior of Li_2TiO_3 under a fusion reactor environment was simulated by simultaneous irradiation of Li_2TiO_3 by the triple ion beams and the respective single ion beams of O"2"+, He"+ and H"+. The microstructural changes in Li_2TiO_3 caused by the irradiation were measured by Raman spectroscopy and FT-IR photoacoustic spectroscopy. The results suggest that the formation of TiO_2 due to displacements by irradiation occurs, and the irradiation defects generated by irradiation trap hydrogen and increase the amount of hydroxyl near the surface. Such phenomena are believed to significantly affect the chemical form of the released tritium and the tritium inventory in the breeding materials of a fusion reactor.
When operating a nuclear power plant the necessity arise to eliminate various defects of building constructions, to seal joints and transitional elements. The authors present data concerning the production of a sealing composition made of epoxy resin and used for NPP premises of emergency location. Analytical relations are presented between the properties of the composition (adhesion strength, water absorption and others) and its structure. Physical, mechanical and thermal properties and structural peculiarities are determined in the process of interaction between the filling and binding agents. The composition sustains sealing properties under environmental conditions at he presence of an air - vapour mixture with 160 degrees C"o temperature and 0.3 MPa surplus pressure. (author).
A novel approach to fault diagnosis is proposed using multiscale morphology analysis to extract impulsive features from the signals with strong background noise. Multiscale morphology is applied to one-dimensional signal by defining both the length and height scales of structuring elements (SEs). A local-peak-value based adaptive algorithm is also introduced. The new approach makes the selection of SEs more transparent and is independent of empirical rules. Both simulated impulsive and vibration signals of two defective roller bearings are employed to validate the proposed algorithm. The roller bearing faults presented in the validation include both inner and outer race faults. The test results show that the multiscale morphology analysis is effective and robust to extract morphological features.
Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce"3"+ sites along with the formation of another type of Ce"3"+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce"3"+ sites with V_S_r shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. copyright 1997 American Institute of Physics.
In this study, we use electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopies to determine the various Ce environments in SrS phosphor materials and how these affect absorption and emission properties. As the Ce concentration is increased from 450 to 7500 ppm, the total EPR-active Ce"3"+ and optical absorption signals increase linearly with Ce concentration; by contrast, the PL intensity saturates at fairly low Ce concentrations (1000 ppm Ce). We suggest that the nonlinear behavior of the PL arises from the presence of nonradiative deexcitation pathways such as defects associated with Ce sites, or Ce endash Ce pairs. copyright 1996 American Institute of Physics.
Industrial radiography accounts for approximately half of all the reported accidents for the nuclear related industry, in both developed and developing countries. This Safety Report is the result of a review made of a large selection of accidents in industrial radiography reported by regulatory authorities, professional associations and scientific journals. A small, representative selection of 43 accident descriptions has been used to illustrate the primary causes of radiography accidents, and a set of measures provided to prevent the recurrence of such accidents or to mitigate the consequences of those that do occur. These accident descriptions were categorized by primary causes as follows: inadequate regulatory control; failure to follow operational procedures; inadequate training; inadequate maintenance; human error; equipment malfunction or defect; design flaws; and wilful violation. The information in this Safety report is intended for use by those regulatory ...
The Moessbauer emission spectrum of "2"4"1Am metal was investigated for influences of radiation self damage. Samples were kept continuously for 230 h at 4.2 K and spectra were taken each 10 to 20 h. No change in f-factor was observed, while the linewidth increased monotonically and reached saturation after approximately 180 h. The original width could be reproduced by a brief warming to room temperature. The increase in width reflects the change in quadrupole interaction due to the creation of lattice defects. The constancy of the f-factor indicates that the basic crystalline structure is retained.
Pd was deposited onto Si (111) 7x7 surface at approximately 700 K inside an ultrahigh vacuum transmission electron microscope. Plan-viewed transmission electron microscopy (TEM) observation indicated that the islands have two kinds of shapes, round and rectangular (one-dimensional) ones. In a diffraction pattern for the rectangular islands, extra spots along the <110> direction of the Si surface, spacing of which is 1/8 times as long as that of Si (220) spots, were seen. A high resolution TEM image showed the corresponding superstructure in the rectangular islands. In situ observation of the growing process of the rectangular islands showed repeat of introduction and relief of strains during the growth, suggesting that such superstructure would be constructed by stacking compositionally different phases or introducing defects so that the periodically maximized strain is relieved.
The purpose of this note is to provide guidance to those who have duties under the Health and Safety at Work Act and other relevant legislation. It gives guidance on the practical application of legislation, concerning radiotherapy equipment. Two particular issues arise out of the requirements of Regulation 33 of the Ionising Radiations Regulations 1985 (IRR85) in relation to equipment which is used for medical exposures. These are the requirement to select, install and maintain this type of equipment in such a way that it is capable of restricting, so far as reasonably practicable, the medical exposure of any person where this is compatible with the intended clinical purpose, including the need to ensure that equipment used for radiotherapy is properly calibrated, and the requirement to notify the Health and Safety Executive (HSE) when an incident occurs involving a malfunction or defect in any 'radiation equipment' which gives rise to a medical ...
The coolant activity analysis to obtain the information about the fuel failure has been studied long before. And several codes have been developed to estimate the number of fuel failures through evaluating volatile and inert fission products release in coolant from the defective fuel. These codes use a fission product diffusion model coupled with a mass balance in the gap and coolant. But each code has a different model to assess fuel failure. In order to develop the model to estimate the number of fuel failures we analysis well-known code's models such as CHIRON, CADE, IODYNE, and CAAP and compare accuracy through Korean PWR activity data
Fine-grained BaTiO3-based X7R ceramic materials were prepared and the effects of milling process on the core-shell structures and dielectric properties were investigated using scanning electron microscope, transmission electron microscope, and energy dispersive spectroscopy (EDS). As the milling time extends, the dielectric constant of the ceramics increases, whereas the temperature coefficient of capacitance at 125degreeC drops quickly. The changes in dielectric properties are considered relevant to the microstructure evolution caused by the milling process. Defects on the surface of BaTiO3 particles increase because of the effects of milling process, which will make it easier for additives to diffuse into the interior grains. As the milling time increases, the shell region gets thicker a...
The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.
We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.
We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.
This research aims to develop a simulation approach based on system dynamics modelling (SDM) and adaptive network based fuzzy inference system (ANFIS) for quantifying and reducing the bullwhip effect in a multi-product, multi-stage supply chain. The proposed model is comprised of three groups of variables influencing the bullwhip effect, namely the structure of a supply chain network, supply chain contributions (ordering process in regular situation or when a supplier has a promotion or shortage gaming) and supply chain performances (the number of defects and ordering lead time). As a result, a two layer simulation model is developed with three generic models. The flexibility of this proposed approach is its ability to model various types of ordering policies which are basic inventory poli...