Energy Technology Data Exchange (ETDEWEB)
Making use of a lead slowing-down spectrometer coupled to a 46 MeV electron linear accelerator and a back-to-back type double fission chamber, the fission cross sections of Am-241, Am-242m and Am-243 have been measured relative to that of U-235 from 0.1 eV to 10 keV with the energy resolution of about 40 % full width at half maximum. Each of the measured result has been compared with (1) the evaluated nuclear data in ENDF/B-VI and JENDL-3.2, and (2) the existing experimental data, for which the evaluated and the experimental data were broadened by the energy resolution function of the spectrometer. (author)
1997-12-31
Energy Technology Data Exchange (ETDEWEB)
Making use of a back-to-back type double fission chamber and a lead slowing-down spectrometer driven by a 46 MeV electron linear accelerator, the fission cross sections of Am-241, Am-242m and Am-243 have been measured relative to that of U-235 from 0.1 eV to 10 keV with the energy resolution of about 40 % full width at half maximum. Each of the measured result has been compared with (1) the evaluated nuclear data in ENDF/B-VI and JENDL-3.2, and (2) the existing experimental data, whose evaluated and measured data were broadened by the energy resolution function of the spectrometer.
1998-08-01
Energy Technology Data Exchange (ETDEWEB)
Making use of a back-to-back type double fission chamber and a lead slowing-down spectrometer driven by a 46 MeV electron linear accelerator, the fission cross sections of Am-241, Am-242m and Am-243 have been measured relative to that of U-235 from 0.1 eV to 10 keV with the energy resolution of about 40% full width at half maximum. Each of the measured result has been compared with (1) the evaluated nuclear data in ENDF/B-VI and JENDL-3.2, and (2) the existing experimental data, whose evaluated and measured data were broadened by the energy resolution function of the spectrometer. (author)
1999-02-01
Energy Technology Data Exchange (ETDEWEB)
This report presents the results of a study dealing with the homogeneous recycling of either Pu or Pu+Np or Pu+Np+Am or Pu+Np+Am+Cm in PWRs using MOX-UE fuel, i.e. standard MOX fuel with a U235 enriched uranium support instead of the standard tail uranium (0.25%) for standard MOX fuel. This approach allows to multirecycle Pu or TRU (Pu+MA) as long as U235 is available, by keeping the Pu or TRU content in the fuel constant and at a value ensuring a negative moderator void coefficient (i.e. the loss of the coolant brings imperatively the reactor to a subcritical state). Once this value is determined, the U235 enrichment of the MOX-UE fuel is adjusted in order to reach the target burnup (51 GWd/t in this study).
2009-05-01
Radioactive targets for neutron-induced cross section measurements
Measurements using radioactive targets are important for the determination of key reaction path ways associated with the synthesis of the elements in nuclear astrophysics (sprocess), advanced fuel cycle initiative (transmutation of radioactive waste), and stockpile stewardship. High precision capture cross-section measurements are needed to interpret observations, predict elemental or isotopical ratios, and unobserved abundances. There are two new detector systems that are presently being commissioned at Los Alamos National Laboratory for very precise measurements of (n,{gamma}) and (n,f) cross-sections using small quantities of radioactive samples. DANCE (Detector for Advanced Neutron-Capture Experiments), a 4 {pi} gamma array made up of 160 BaF{sub 2} detectors, is designed to measure neutron capture cross-sections of unstable nuclei in the low-energy range (thermal to {approx}500 keV). The high granularity and high detection efficiency of DANCE, combined with ...
2004-01-01
Plasma nitriding of Ck 15 steel
International Nuclear Information System (INIS)
With the aim of optimizing the nitriding process parameters (temperature and gas mixture ) experimental studies of the plasma nitriding of Ck 15 steel were carried out, using a D. C. glow discharge. Nitriding treatments were performed at 450, 500 and 550 and N_2/H_2 volume ratio of 3/1, 1/1 and 1/3 for 5 hours. Nitriding treatment produces modified surface layer consisting of an outer compound layer and an inner diffusion layer.The plasma nitriding of Ck 15 produce single white layer consisting of #gamma#-(Fe_4N).
2003-08-25
Hazardous waste operational plan for site 300
Energy Technology Data Exchange (ETDEWEB)
This plan outlines the procedures and operations used at LLNL's Site 300 for the management of the hazardous waste generated. This waste consists primarily of depleted uranium (a by-product of U-235 enrichment), beryllium, small quantities of analytical chemicals, industrial type waste such as solvents, cleaning acids, photographic chemicals, etc., and explosives. This plan details the operations generating this waste, the proper handling of this material and the procedures used to treat or dispose of the hazardous waste. A considerable amount of information found in this plan was extracted from the Site 300 Safety and Operational Manual written by Site 300 Facility personnel and the Hazards Control Department.
1982-02-12
Basic criticality relations for gas core design
Energy Technology Data Exchange (ETDEWEB)
Minimum critical fissile concentrations are calculated for U-233, U-235, Pu-239, and Am-242m mixed homogeneously with hydrogen at temperatures to 15,000K. Minimum critical masses of the same mixtures in a 1000 liter sphere are also calculated. It is shown that propellent efficiencies of a gas core fizzler engine using Am-242m as fuel would exceed those in a solid core engine as small as 1000L operating at 100 atmospheres pressure. The same would be true for Pu-239 and possibly U-233 at pressures of 1000 atm. or at larger volumes.
1992-05-22
Characterization and Wear Behavior of Plasma Nitrided Nickel Based Dental Alloy
British Library Electronic Table of Contents (United Kingdom)
In the present work, the plasma nitriding behavior of a nickel based dental alloy was investigated. Plasma nitriding experiments carried out under constant gas mixture (15% H2?85% N2) for different process parameters including time (4, 6, 10, and 20?h) and temperature (400, 450, 500, and 550??C). Depending on nitriding parameters, it was found that triple or double layers formed on the surface of the samples. Increasing of treatment time and temperature has resulted in a double layer. ?N1 layer was in formed all nitrided samples. However, ?N2 layer is formed only at low temperatures and in short times. Layer growth of nickel based alloys increases until a critical time or a critical temperature reached. Above these critical values, it is observed that the layer thickness decreases. It was ...
2011-01-01
A gas-jet ECR ion source at TRIGA-SPEC
International Nuclear Information System (INIS)
The TRIGA-SPEC experiment has been installed recently at the research reactor TRIGA Mainz. Ground state properties like masses, charge radii, spins, and moments of short-lived nuclides can be determined with very-high precision using the Penning trap mass spectrometer TRIGA-TRAP, and the collinear laser spectroscopy setup TRIGA-LASER. Short-lived neutron-rich radionuclides in the mass range 80 < A < 140 are produced by thermal neutron induced fission of e.g. U-235, Pu-239 or Cf-249, respectively. For the extraction and ionization of the fission products a gas-jet system is coupled to a 2.45-GHz ECR ion source for the production of singly charged ions. The gas-jet has been tested on-line and fission products have been extracted. First off-line tests of the ion source have been performed successfully with argon gas. The results of the commissioning test of the ion source and the on-line coupling of the experiments are presented.
2010-03-08
Fluence- and exposure-to-dose conversion for human whole-body gamma irradiation
International Nuclear Information System (INIS)
... kev range 10-100 kev range 100-1000 man mev range 01-10 personnel
1978-01-01
ZZ UKFY2, Fission Yields of Th, U, Np, Pu, Am, Cm, Cf Isotopes
International Nuclear Information System (INIS)
Description of program or function: Format: ENDFB-6 format; Nuclides: Th-232, U-233, U-234, U-235, U-236, U-238, Np-237, Np-238, Pu-238, Pu-239, Pu-240, Pu-241, Pu-242, Am-241, Am-242, Am-243, Cm-243, Cm-244, Cm-245, and from the spontaneous fission of Cm-242, Cm-244, and Cf-252. Origin: New evaluation (Crouch 1, 2, 3, 4; UKFY1; JEF-1). A new evaluation of fission product yields from the thermal, fast, and 14 MeV neutron-induced fission of the following nuclides has been prepared in ENDFB-VI format: "2"3"2Th, "2"3"3U, "2"3"4U, "2"3"5U, "2"3"6U, "2"3"8U, "2"3"7Np, "2"3"8Np, "2"3"8Pu, "2"3"9Pu, "2"4"0Pu, "2"4"1Pu, "2"4"2Pu, "2"4"1Am, "2"4"2"mAm, "2"4"3Am, "2"4"3Cm, "2"4"4Cm, "2"4"5Cm; and from the spontaneous fission of "2"4"2Cm, "2"4"4Cm, and "2"5"2Cf
Reprocessed uranium fuel fabrication in Japan
International Nuclear Information System (INIS)
Nuclear fuel vendors in Japan are now studying reprocessed uranium (RepU) fuel in order to prepare for full scale utilization in the future. Separate studies are made for PWR and BWR fuel. The study consists of 2 phrases. The purposes of phase-1 are to understand various RepU characteristics in the fuel fabrication process, to analyze the core characteristics by loading RepU assemblies, to solve the problems clarified in the study, and to collect basic data for licensing. In phase-2, the effects of impurities on the fabrication process will be evaluated, and the safety of RepU fuel manufacturing will be confirmed with a RepU fuel fabrication campaign in 1990. The neutronic data will be collected after insertion into power reactors, and the data will be used to verify plant safety for full utilization of RepU in the future. This paper summarizes the phase-1 study results. 1. RepU Characteristics. The internal and external radiation exposures due to nuclide impurities in RepU, were ...
1990-12-01
International Nuclear Information System (INIS)
The total interaction cross sections (#sigma#_t) of some sugars and amino acids and five elements: lithium, carbon, oxygen, aluminium and calcium have been measured for 6.4 keV, 13.95 keV, 14.4 keV, 17.74 keV, 24.14 keV, 30.8 keV, 35 keV, 59.54 keV, 81 keV, 122 keV and 136 keV photons in a narrow beam good geometry set up, by using high resolution detectors such as a Si-PIN diode detector and a high purity germanium detector. The #sigma#_t values have been used in a matrix method to evaluate the effective atomic numbers Z_e_f_f of the samples from their effective atomic cross sections #sigma#_a. The effective atomic cross section of a sample #sigma#_a is the total interaction cross section divided by the total number of atoms of all types in it. Further, a ...
2007-09-28
Complex Spatio-Spectral Structure of Diffuse X-Ray emission in the ...
SN 1987A: Soft X-Ray Intensity Ratio. 2002-12 to 2000-12. 2005-7 to 2002-12. Contours: 2002-12. (0.5 2 keV). (0.5 2 keV). Contours: 2005-7 ...
Electron capture decay of sup 203 Pb
Energy Technology Data Exchange (ETDEWEB)
Intensities of {gamma}-transitions emerging from the EC decay of {sup 203}Pb were measured precisely. The obtained relative {gamma}-intensities are 100%(279.2keV), 4.14+-0.08%(401.3keV) and 0.932+-0.022%(680.5keV). The 279.2 and 680.5keV level feeding {beta}-branching ratios were deduced to be 95.3+-0.1 and 4.7+-0.1% respectively. {sup 203}Pb is suggested for calibration purposes. (author).
1989-01-01
8"+ isomers in N=48 isotones and E2 polarization charges
International Nuclear Information System (INIS)
... charges energy levels gamma spectra half-life isomeric nuclei kev range
1972-05-01
Structure of the triplet of low-lying states in sup 101 Mo
Energy Technology Data Exchange (ETDEWEB)
The properties of the triplet of low-lying states in {sup 101}Mo have been studied through spectroscopy of the {gamma} radation following thermal neutron capture in {sup 100}Mo and {beta}-decay of {sup 101}Nb and through a measurement of the proton angular distributions in the {sup 100}Mo(d, p) reaction with 14 MeV deuteron energy. The half-lives of the 13.5 keV state and the 57.0 keV 5/2{sup +} state have been measured as 226(7) and 133(7) ns, respectively. These values and the quadrupole/dipole mixing ratios of the 13.5 keV and 43.5 keV transitions yield spin and parity 3/2{sup +} for the 13.5 keV level. The E2 components in the 13.5 (3/2{sup +}->1/2{sup +}) and 43.5 keV (5/2{sup +}->3/2{sup +}) transitions are {le} 8x10{sup -4} and 54(9)%, respectively. The possibility of an additional state near to the 57.0 keV level is discussed. ...
1991-06-01
Structure of the triplet of low-lying states in "1"0"1Mo
International Nuclear Information System (INIS)
The properties of the triplet of low-lying states in "1"0"1Mo have been studied through spectroscopy of the #gamma# radation following thermal neutron capture in "1"0"0Mo and #beta#-decay of "1"0"1Nb and through a measurement of the proton angular distributions in the "1"0"0Mo(d, p) reaction with 14 MeV deuteron energy. The half-lives of the 13.5 keV state and the 57.0 keV 5/2"+ state have been measured as 226(7) and 133(7) ns, respectively. These values and the quadrupole/dipole mixing ratios of the 13.5 keV and 43.5 keV transitions yield spin and parity 3/2"+ for the 13.5 keV level. The E2 components in the 13.5 (3/2"+#->#1/2"+) and 43.5 keV (5/2"+#->#3/2"+) transitions are #<=# 8x10"-"4 and 54(9)%, respectively. The possibility of an additional state near to the 57.0 keV level is discussed. IBFM/PTQM calculations, taking into ...
International Nuclear Information System (INIS)
A semi-empirical relation which can be used to determine the total attenuation cross sections of samples containing H, C, N and O in the energy range 145-1332 keV has been derived based on the total attenuation cross sections of several sugars, amino acids and fatty acids. The cross sections have been measured by performing transmission experiments in a narrow beam good geometry set-up by employing a high-resolution hyperpure germanium detector at seven energies of biological importance such as 145.4 keV, 279.2 keV, 514 keV, 661.6 keV, 1115.5 keV, 1173.2 keV and 1332.1 keV. The semi-empirical relation can reproduce the experimental values within 1-2%. The total attenuation cross sections of five elements carbon, aluminium, titanium, copper and zirconium measured in the same experimental set-up at the energies mentioned ...
2006-09-28
The differential cross section measurements for /sup 241/Am, /sup 242m/Am and /sup 243/Am are reviewed in the energy range from 0.5 eV to 10 keV. Parameters extracted from resonance analysis, such as the neutron strength function, the average level spacing, the average capture and fission widths, are compared for the various measurements. The average capture and fission cross sections from 100 eV to 10 keV are directly compared. The status of the data set is discussed with suggestions for further measurements. 24 references.
1978-11-16
The investigations on K and L X-ray fluorescence parameters of gold compounds
British Library Electronic Table of Contents (United Kingdom)
The study aimed to determine the chemical effects on the K and L X-ray intensity ratios and the K and L X-ray production cross sections for gold compounds. The K shell fluorescence yields and L shell average yields were also investigated. The samples were excited by 59.5keV ?-rays from an 241Am annular radioactive source and 123.6keV ?-rays from a 57Co annular radioactive source. K and L X-rays emitted from samples were counted by an Ultra-LEGe detector with a resolution of 0.150keV at 5.9keV. The experimental values were compared with theoretical, the semi-empirical and other experimental values.
2010-01-01
The Canonical Seyfert Spectrum: The Implications of OSSE ...
... In a HEAO 1 study of active galaxies, principally Seyfert 1s, in the 2, 165 keV energy range, Rothschild et al. ... As discussed by Rothschild et al. ...
2011-05-14
On penetration effect in M1 component of 70.45 keV #gamma#-transition in "1"7"7Ta
International Nuclear Information System (INIS)
... gamma radiation l conversion m conversion mev range 10-100 mixing ratio
1987-04-14
Electric and magnetic dipole transitions in odd-proton rare-earth nuclei
International Nuclear Information System (INIS)
... gamma cascades kev range 10-100 lifetime lutetium 171 lutetium 173 lutetium
1972-05-01
ZZ MCJEF22NEA.BOLIB, MCNP Cross Section Library Based on JEF-2.2
International Nuclear Information System (INIS)
1 - Description or function: Continuous energy cross-section data library for the Monte Carlo program MCNP based on the JEF-2.2 evaluated nuclear data library (ACE Format). Format: ACE Number of groups: Continuous energy Nuclides (107): H-1, H-2, He-4, Li-6, Li-7, Be-9, B-10, B-11, C-nat, N-14, N-15, O-16, O-17, F-19, Na-23, Mg-nat, Al-27, Si-nat, Cl-nat, Ti-nat, Cr-50, Cr-52, Cr-53, Cr-54, Mn-55, Fe-54, Fe-56, Fe-57, Fe-58, Co-59, Ni-58, Ni-60, Ni-61, Ni-62, Ni-64, Zr-90, Zr-91, Zr-92, Zr-94, Zr-96, Zr-nat, Nb-93, Mo-92, Mo-94, Mo-95, Mo-96, Mo-97, Mo-98, Mo-100, Mo-nat, Tc-99, Ru-101, Ru-102, Ru-104, Rh-103, Pd-105, Pd-107, Ag-109, I-129, Xe-131, Cs-133, Pr-141, Nd-143, Nd-145, Pm-147, Sm-147, Sm-149, Sm-150, Sm-151, Sm-152, Eu-153, Gd-154, Gd-155, Gd-156, Gd-157, Gd-158, Gd-160, Hf-174, Hf-176, Hf-177, Hf-178, Hf-179, Hf-180, Pb-nat, Bi-209, Th-232, U-234, U-235, U-236, U-238, Np-237, Pu-238, Pu-239, Pu-239bis, Pu-240, Pu-241, Pu-242, ...
ZZ MCB63NEA.BOLIB, MCNP Cross Section Library Based on ENDF/B-VI Release 3
International Nuclear Information System (INIS)
1 - Description of program or function: Continuous energy cross-section data library for the Monte Carlo program MCNP based on the ENDF/B-VI Release 3 evaluated nuclear data library (ACE Format). Format: ACE; Number of groups: Continuous energy; Nuclides (107): H-1, H-2, He-4, Li-6, Li-7, Be-9, B-10, B-11, C-nat, N-14, N-15, O-16, O-17, Na-23, Mg-nat, Al-27, Si-nat, Cl-nat, Ti-nat, Cr-50, Cr-52, Cr-53, Cr-54, Mn-55, Fe-54, Fe-56, Fe-57, Fe-58, Co-59, Ni-58, Ni-60, Ni-61, Ni-62, Ni-64, Zr-90, Zr-91, Zr-92, Zr-94, Zr-96, Zr-nat, Nb-93, Mo-94, Mo-95, Mo-96, Mo-97, Mo-nat, Tc-99, Ru-101, Ru-102, Ru-104, Rh-103, Pd-105, Pd-107, Ag-109, I-129, Xe-131, Cs-133, Pr-141, Nd-143, Nd-145, Pm-147, Sm-147, Sm-149, Sm-150, Sm-151, Sm-152, Eu-153, Gd-154, Gd-155, Gd-156, Gd-157, Gd-158, Gd-160, Hf-174, Hf-176, Hf-177, Hf-178, Hf-179, Hf-180, Hf-nat, Pb-206, Pb-207, Pb-208, Bi-209, Th-232,U-233, U-234, U-235, U-236, U-238, Np-237, Pu-238, Pu-239, Pu-240, ...
Penetration effect in the M1 component of "1"7"7Ta #gamma#-transition with energy of 70.45 keV
International Nuclear Information System (INIS)
The magnetic #beta#-spectrometer of the #pi# #sq root#2 type with 0.07% pulse resolution is used to measure the intensities of interval conversion electrons on L- and M-subshells of 70.45 keV "1"7"7 Ta gamma-transition. The results are analyzed and the values of mixing parameter #sigma#(E2/M1) and penetration parameter #lambda# are obtained.
Improved FNAL linac beam choppers
Energy Technology Data Exchange (ETDEWEB)
A discussion is presented of the 750-KeV chopper experience with both proton and negative ion beams and the ability of these systems to tailor the Linac beam to the diverse requirements of its users; normal accelerator injection, neutron therapy beam, and electron cooling experiments. This flexibility plus a cleaner beam pulse, improved thyratron operation, and mechanical modularity are the results of recent improvements. Additional benefits have been increased reliability and ease of service to the 750-KeV chopper. 3 refs.
1981-06-01
Gamma-ray spectra from neutron capture on /sup 87/Sr
Energy Technology Data Exchange (ETDEWEB)
The gamma-ray spectrum following neutron capture on /sup 87/Sr was measured at 3 neutron energies: E/sub n/ = thermal, 2 keV, and 24 keV. Gamma rays were detected in a three-crystal Ge(Li)-NaI-NaI pair spectrometer. Gamma-ray intensities deduced from these spectra by spectral unfolding are presented.
1981-07-01
Evaluation of adhesive plasters by radionuclide X-ray fluorescence analysis
International Nuclear Information System (INIS)
A radiometric method was elaborated for surface density determinations of the adhesive layer of plasters by radionuclide X-ray fluorescence using the 17.47 keV bremsstrahlung of "1"4"7Pm/Mo. The bremsstrahlung line excites the 8.63 keV characteristic K#alpha# line of Zn contained in the adhesive layer of the plaster as a filling material in the form of ZnO. In homogeneous adhesive layers the Zn content is proportional to surface density. (author).
1976-01-01
Observed energy dependence of Fano factor in silicon at hard X-ray energies
Energy Technology Data Exchange (ETDEWEB)
An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.
1999-03-01
High resolution alpha-particle spectroscopy using CR-39 plastic track detector
Energy Technology Data Exchange (ETDEWEB)
A technique has been developed for high resolution alpha particle spectroscopy from track length determination in CR-39 plastic. On individual tracks an energy resolution deltaE close to the range straggling limit is obtainable. For 6 MeV alpha-particle deltaE is proportional 35 keV on individual particles and for groups of particles deltaE proportional 20 keV can be achieved using certain data selection criteria. At 100 keV on individual particles deltaE is proportional 20 keV. The analysis requires 1) a knowledge of the track-etch rate (Vsub(T))-range relationship and 2) a theoretical understanding of alpha-particle track structure in CR-39 as a function of particle energy, dip angle and degree of etching. The structure of alpha-particle etched tracks in CR-39 is described and two methods of analysis discussed. Examples are given of the resolution attainable on tracks of alpha-particles as natural ...
1984-06-15
0--30 keV low-energy focused ion beam system
Energy Technology Data Exchange (ETDEWEB)
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
1988-05-01
0--30 keV low-energy focused ion beam system
International Nuclear Information System (INIS)
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
The effects of energy non-monochromaticity of "1"1B ion beams on "1"1B diffusion
International Nuclear Information System (INIS)
We have shown that energy contamination introduced by ion beam deceleration technology that is used to increase the beam currents available for low energy boron implants, can affect fabricated junctions adversely. A 4 keV "1"1B beam is extracted and retarded by a potential of -3.5 keV for 0.5 keV "1"1B implantation, or by a potential of -3.8 keV for 0.2 keV "1"1B implantation. Intentional beam contamination was introduced by turning off the retarding potential to allow the 4 keV "1"1B ions to irradiate Si wafers directly. The percentage of contamination, at levels of 0.1%, 0.2% and 0.3% was introduced. Rapid thermal annealing of all the implanted samples was performed under N_2 ambient at 1050 deg. C for 1 s. The dopant tail profiles themselves are not significant if the contamination levels are low. However, the much higher damage level coming from high energy ...
2005-08-01
International Nuclear Information System (INIS)
The absolute cross sections of "2"3Na(p,n)"2"3Mg, "2"7Al(p,n)"2"7Si and "3"0Si(#alpha#,n)"3"3S reactions were measured in the incident energy range of 5.05 to 5.80, 5.80 to 6.25 and 3.975 to 6.235 MeV respectively using a spherically shaped 4#pi# neutron detector. In the energy range 5.80 to 7.80 and 6.235 to 11.30 MeV the absolute cross sections of "2"3Na(p,n)"2"3Mg and "3"0Si-(#alpha#,n)"3"3S reactions were determined by optical model calculations. The cross sections of the inverse reactions "2"3Mg(n,p)"2"3Na and "3"3S(n,#alpha#)"3"0Si were also calculated by the same method for the neutron energy range of 10 keV to 7.50 MeV for each reaction. The cross section of the latter reaction in the neutron energy range of 10 keV to 840 keV was also determined from its inverse reaction "3"0Si(#alpha#,n)"3"3S by the application of the detailed balance theorem. The reactions for which the cross sections were determined are of ...
DECAY OF Ta$sup 177$ AND Lu$sup 177$ TO LEVELS IN Hf$sup 17$$sup 7$
The decays of Ta/sup 177/ and Lu/sup 177/ to levels in vestigated with beta spectrometers, NaI(Tl) gamma spectrometers, and fast coincidence and angular correlation techniques. Energy levels in Hf/sup 177/ were characterized according to their energy (kev), the Nilsson asymptotic quantum numbers (Nn/sub 2/ LAMBDA ), the total angular momentum and its component along the symmetry axis (I,K), and the parity ( pi ) as follows: 0STA5I4 7/2, 7/2-!; 112.97STA514 9/2, 7/ 2-!; 249.7STA5I4 11/2, 7/1-!; 32l.34STA624 9/2, 9/2+1; 447.9STA624 11/2, 585.8STA642 7/2, 3/2+1; 509.0STA5I2 5/2, 5/1-1; 605.5STA512 7/2, 5/2-!; 746.04STA633 7/2, 7/2+1; 848.2STA 633 9/2, 7/2+1; and 1058.38STA503 7/2, 7/2-!. The levels at 447.9, 488.8, and 585.8 kev are tentative. The spins and parities were uniquely determined by angular correlation and internal conversion data for the levels at 746.0 and 848.2 kev, asof the levels at 0, ...
1961-10-15
International Nuclear Information System (INIS)
Rossi X-ray Timing Explorer (RXTE) observations of the bright supernova remnant Cas A have revealed a hard power law component above 10 keV in addition to two thermal components inferred from ASCA measurements of the many line centroids from low-Z elements. The power law can be shown to be consistent with synchrotron emission from radio to hard x-rays by electrons of up to 4 x 10"1"3 eV. Measurement of the 1157 keV line by CGRO from "4"4Sc in the chain of decay of "4"4Ti predicts that the two "4"4Ti lines at 68 and 78 keV should appear at the CGRO intensity. RXTE has placed upper limits on such lines that are marginally consistent with the CGRO measurement. Implications of these results on sites for cosmic ray acceleration and nucleosynthesis are discussed.
1999-01-01
Progress of negative-ion based NBI system for JT-60U
Energy Technology Data Exchange (ETDEWEB)
The operation of the negative ion based NBI system for JT-60U has been progressed since 1996. Most of the efforts in the operation for increasing beam power and energy have been concentrated to get over the troubles, caused by surge energy at the moment of the accelerator break-down, in the ion sources and high voltage power supplies. The ion source for the N-NBI, so far, has accelerated negative ion beams of 14.3 A at 380 keV with deuterium and 18.5 A at 360 keV with hydrogen against the target of 22 A. The neutral beam power injected into JT-60U has already reached 5.2 MW at 350 keV for 0.7 sec with deuterium. (author)
1998-07-01
Negative-ion based NBI system for JT-60U
Energy Technology Data Exchange (ETDEWEB)
A 500 keV negative-ion based NBI system is under construction for NB current drive and plasma core heating in high density plasma in JT-60U. Part of the beamline and the high voltage power supply required for a verification test of an ion source was completed in March 1995. After having done a high potential test of the power supply, the negative-ion generation and acceleration tests started in June 1995 aiming at deuterium beams of 500 keV, 22A. In initial experiment, deuterium negative-ion beams of 410 keV, 6.1A (2.5 MW) for 0.2 sec, so far, have been achieved. This is the world highest D{sup {minus}} current and negative ion beam power. The construction of the total system will be completed by the beginning of 1996, and the beam injection will start in March 1996.
1995-12-31
International Nuclear Information System (INIS)
The half-value thicknesses, linear and mass attenuation coefficients of biological samples such as bone, muscle, fat and water have been measured at 140, 364 and 662keV ?-ray energies by using the ATOMLABTM-930 medical spectrometer. The ?-rays were obtained from 99mTc, 131I and 137Cs ?-ray point sources. Also theoretical calculations have been performed in order to obtain the half-value thicknesses and, mass and linear attenuation coefficients at photon energies 0.001keV-20MeV for bone, muscle and water samples. The calculated value and the experimental results of this work and the other results in literature are found to be in good agreement.
2006-11-01
Evidence for valence transitions in neutron capture gamma-ray spectra in /sup 88/Sr
Energy Technology Data Exchange (ETDEWEB)
Neutron capture ..gamma..-ray spectra have been measured at 11 average neutron energies from 10 to 530 keV in /sup 88/Sr using a 20 x 15 cm NaI detector with time-of-flight discrimination of background events. The partial radiation widths and the calculated partial valence widths are compared for the strong p-wave resonances at 287 and 321 keV and found to be highly correlated. At these energies, the spectra are dominated by strong transitions to low-lying single particle states, in confirmation of the role of valence capture in the 3p region. However, the data do not support this mechanism at <508> keV.
1985-01-15
Evidence for valence transitions in neutron capture gamma-ray spectra in /sup 88/Sr
International Nuclear Information System (INIS)
Neutron capture #gamma#-ray spectra have been measured at 11 average neutron energies from 10 to 530 keV in /sup 88/Sr using a 20 x 15 cm NaI detector with time-of-flight discrimination of background events. The partial radiation widths and the calculated partial valence widths are compared for the strong p-wave resonances at 287 and 321 keV and found to be highly correlated. At these energies, the spectra are dominated by strong transitions to low-lying single particle states, in confirmation of the role of valence capture in the 3p region. However, the data do not support this mechanism at <508> keV.
1984-09-10
Traditional Fusion reaction: D + T n (14.07 MeV) + 4He (3.52 MeV ...
as for direct energy conversion in specialized direct electrical energy conversion plants. Figure 1. An energetic (~163KeV) proton and a 11boron nucleus fuse ...
International Nuclear Information System (INIS)
The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. According to the coincidence data, the decay scheme was modified. The positions of 221.80, 318.00, 377.90, 452.50, 515.42, 1011.05 and 1759.72 keV transitions have been arranged again, the transition positions of 104.70, 105.95 and 774.15 keV gamma-rays have been assigned for the first time, the positions of 169.00, 590.91, 980.52 and 1431.68 keV transitions have been reconfirmed, the 1508.01 keV gamma-ray was observed simultaneously for the first time and its transition position has been assigned. The #beta#-intensities and the values of log ft of most levels were calculated. (author)
2000-09-01
Studies on energy level schemes of some nuclei by Gamma-ray spectroscopy
International Nuclear Information System (INIS)
several authors tried to drive codes to construct nuclear level scheme of nuclei using a set of measured gamma -ray transitions and known energy levels, Ritz combination principle proved to be useful in constructing a more complete decay scheme. In this thesis the energy level schemes of some nuclei have been investigated by the measurements of the gamma - ray energies and use of Ritz combination code. The nuclei under investigation are "110m Ag (253 d)"110 Cd and "166m Ho (1200 yr) "166 E r. On the basis of the suggested level at 2249.02 keV by the Ritz code new positions of the two gamma-ray transitions at 677.5 and 706.6 KeV are found in decay scheme of "110m Ag. Also by this code, new position for the 994.84 KeV gamma-ray transition were established to depopulate the level at 1075.2 KeV.
1984-01-01
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 ...
1999-03-01
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
International Nuclear Information System (INIS)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute ...
1999-03-01
Measurement of the 183 keV Resonance in 17O(p,alpha)14N using a Novel Technique
Energy Technology Data Exchange (ETDEWEB)
We have developed a novel technique for measurements of low energy (p,alpha) reactions using heavy ion beams and a differentially-pumped windowless gas target. We applied this new approach to study the 183 keV resonance in the 17O(p,alpha)14}N reaction. We report a resonance energy (center-of-mass) of 183.5{+0.1}{-0.4} keV, a resonance strength of 1.70 +/- 0.15 meV, and set an upper limit (95\\% confidence) on the total width of the state of < 0.1 keV. This resonance is important for the 17O(p,alpha)14}N reaction rate, and we find that 18F production is significantly decreased in low mass ONeMg novae but less affected in more energetic novae. We also report the first determination of the stopping power for oxygen ions in hydrogen gas near the peak of the Bragg curve (E=193 keV/u) to be (63+/-1)e-15 eV-cm2.
2007-06-01
Ion beam pulsing for time of flight (TOF) experiments
Energy Technology Data Exchange (ETDEWEB)
The essential mechanical and electronic parts of a beam pulsing system are described, which reaches an energy resolution of ..delta..E/E=0.1%-0.4% in the energy range from 100 eV and 10 keV.
1985-01-01
Experimental research on passive #gamma# scanning system at hot-cell for hull monitoring
International Nuclear Information System (INIS)
A simulated hull monitoring system based on passive #gamma# ray scanning was set-up in K-01 hot-cell, which consists of a simulated hull basket, a collimator system, a 150 cm"3 HPGe detector and an ORTEC-919 multichannel buffer-computer system. Six different kinds of experimental set-up were established to simulate the variations of #gamma# ray source term distribution (partly concentration) and the variations of matrix density (+46.1%). The experimental results show that the biases of peak area is better than -25.3% for "1"3"7Cs 662 keV #gamma# rays and -18.6% for "1"4"4Ce-"1"4"4Pr 2186 keV #gamma# rays. The hardness of pulse height spectrum is demonstrated to show that the peak area ratio of 2186 keV to 662 keV varies from 380 to 72 when the thickness of lead filter varies form 5 mm to 30 mm. Also studied are the design parameters of collimator system.
Electron Flux - 8.0 keV - ISWA wiki - ISWA - NASA
Nov 14, 2009 ... Ring Current electrons from the Fok Ring Current Model are computed using plasma and magnetic field values from the SWMF magnetosphere ...
Electron Flux - 4.7 keV - ISWA wiki - NASA
Nov 14, 2009 ... Ring Current electrons from the Fok Ring Current Model are computed using plasma and magnetic field values from the SWMF magnetosphere ...
Electron Flux - 179 keV - ISWA wiki - ISWA - NASA
Nov 14, 2009 ... Ring Current electrons from the Fok Ring Current Model are computed using plasma and magnetic field values from the SWMF magnetosphere ...
Annealing behavior of radiation damages in metal-silicides
International Nuclear Information System (INIS)
The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).
Parity nonconservation in "2"0"7Pb
International Nuclear Information System (INIS)
Two experiments are currently underway to measure the single-particle weak mixing matrix element for the 1064 KeV transition in "2"0"7Pb. One experiment measures the circular polarization of the 1064 KeV gamma ray emitted from an unpolarized source, while the other experiment measures the forward-backward asymmetry of gamma rays emitted from a polarized source. Analysis of the first set of polarized source data yields an upper limit of 46 eV for the single-particle weak mixing matrix element. copyright 1995 American Institute of Physics.
International Nuclear Information System (INIS)
Total M X-ray cross sections for 12 elements in atomic range 70#<=#Z#<=#92 were measured at 5.96 keV Mn K X-ray photon energy. The average M shell fluorescence yields (anti #omega#_M) of these elements have also been observed using the presently measured cross section values and the theoretical M shell photoionisation cross section values. (orig.).
Investigation of the "1"0"1Mo level and gamma-decay scheme by thermal neutron capture in "1"0"0Mo
International Nuclear Information System (INIS)
The #gamma#-radiation following thermal neutron capture in "1"0"0Mo has been studied by singles and coincidence measurements. A "1"0"1Mo level scheme has been deduced and is compared with the results of previous (d,p), (n,#gamma#) and "1"0"1Nb decay studies. The existence of the first excited state at 13.51 keV has been confirmed. The present data yield a neutron binding energy of 5398.4 KeV. (Auth.).
1975-03-01
Inelastic scattering of electrons by close-lying levels of isomeric nuclei
Energy Technology Data Exchange (ETDEWEB)
The process of inelastic scattering of hot plasma electrons with energies upto 3 keV by a pair of close-lying nuclear levels (..delta../ital E/less than or equal to2keV), one of whichis isomeric, is discussed. The transition cross sections in the nuclei/sup 242/Am, /sup 171/Lu, and /sup 73/Se are calculated. Estimates of the numberof isomeric nuclei de-excited as a result of electron-stimulated processes in aplasma with parameters characteristic of present-day experiments in controlledthermonuclear fusion are given.
1988-11-01
Energy Technology Data Exchange (ETDEWEB)
Neutral atom beams with energies above 200 keV may be required for various purposes in magnetic fusion devices following TFTR, JET and MFTF-B. These beams can be produced much more efficiently by electron detachment from negative ion beams than by electron capture by positive ions. We have investigated the efficiency with which such neutral atoms can be produced by electron detachment in partially ionized hydrogen plasma neutralizers.
1980-09-01
Energy Technology Data Exchange (ETDEWEB)
In this work, the chemical transformations induced by 5 keV protons (10{sup 6} ion cm{sup -2}) at the surface of 0.4 {mu}m polyacrylonitrile and polymethacrylonitrile films are analysed by XPS and IRRAS. Spectroscopic changes in both the polymers are globally similar, the most significant feature being a lower relative concentration of nitrogen with respect to carbon closer to the surface. Quantitatively, this change is more marked in the case of polyacrylonitrile which suggests a direct relation with the hydrogen in {alpha} to the nitrile function.
1999-05-02
International Nuclear Information System (INIS)
1 - Description: Format: MATXS. Number of groups: 80 neutron-, 24 photon-groups. 97 Nuclides: 1-H-1, 1-H-2, 2-He-3, 2-He-4, 3-Li-6, 3-Li-7, 4-Be-9, 5-B-10, 5-B-11, 6-C- nat., 7-N-14, 7-N-15, 8-O-16, 9-F-19, 11-Na-23, 12-Mg-nat., 13-Al-27, 14-Si-nat., 15-P-31, 17-Cl-nat., 18-Ar-40, 19-K-nat., 20-Ca-nat., 22-Ti-nat., 23-V-nat., 24-Cr-50, 24-Cr-52, 24-Cr-53, 24-Cr-54, 25-Mn-25, 26-Fe-54, 26-Fe-56, 26-Fe-57, 26-Fe-58, 27-Co-59, 28-Ni-58, 28-Ni-60, 28-Ni-61, 28-Ni-62, 28-Ni-64, 29-Cu-nat., 31-Ga-nat., 39-Y-89, 40-Zr-nat., 41-Nb-93, 42-Mo-nat., 47-Ag-107, 47-Ag-109, 48-Cd-nat., 50-Sn-nat., 63-Eu-151, 63-Eu-153, 64-Gd-152, 64-Gd-154, 64-Gd-155, 64-Gd-156, 64-Gd-157, 64-Gd-158, 64-Gd-160, 73-Ta-181, 74-W-182, 74-W-183, 74-W-184, 74-W-186, 75-Re-185, 75-Re-187, 79-Au-197, 82-Pb-nat., 83-Bi-209, 90-Th-232, 91-Pa-233, 92-U-232, 92-U-233, 92-U-234, 92-U-235, 92-U-236, 92-U-237, 92-U-238, 93-Np-237, 93-Np-238, 94-Pu-238, 94-Pu-239, 94-Pu-240, 94-Pu-241, ...
WLUP3.0, 69 and 172 Group Cross Section Libraries for WIMS
International Nuclear Information System (INIS)
Description or function: WLUP contains validated WIMS-D formatted cross section libraries in 69 and 172 energy group structures for nuclear reactor calculations. Materials from recently released evaluated nuclear data libraries are included. The NJOY nuclear data processing system was applied for generating the cross section files following the models and conventions built into the WIMS-D lattice code. The relevant features for the WIMS users are: - Energy group structures: 69 and 172 energy groups. - List of materials: WIMS ID, general information, source of data. - Cross sections: 69 and 172 group plots. - Resonance data: WIMS ID, temperature, background cross sections. - Goldstein-Cohen factors: Goldstein-Cohen lambda values. - Thermal scattering data: thermal scattering laws and P1 matrixes. - Fission spectrum: fission spectrum data. - Burnup data: burnup chains. - Fission product yields: fission yield tables. - Pseudo lumped fission product: Description of pseudo fission product. ...
Traces of evidence. Nuclear forensics and illicit trafficking
International Nuclear Information System (INIS)
An IAEA databank lists a number of reported cases of illicitly trafficked nuclear or other radioactive materials. Apart from the traditional concern with nuclear proliferation, the post September 11th public is now wary of a possible attack by terrorists with a nuclear or radiation dispersion device (RDD). Until now, the seized quantities have not been sufficient to manufacture a nuclear explosive device, but they might be enough to construct an RDD. Recognizing the latent global challenge to public health and safety, the G8 States (Japan, USA, Germany, France, UK, Italy, Canada, and Russia) have called for 'joint international efforts to identify and suppress illicit supply' of, and demand for, nuclear material and to deter potential traffickers. One measure gaining in significance is to identify seized material and trace it back to its origin the objective of an emerging science known as nuclear forensics. Repeatedly nuclear or other radioactive material of unknown origin are ...
2003-06-01
International Nuclear Information System (INIS)
Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, TED was suppressed in the p"+/n junction implanted at 2 ...
2004-06-01
International Nuclear Information System (INIS)
In various situations, measurements in prompt gamma neutron activation analysis (PGNAA) are performed to determine the amount of an elemental impurity relative to that of a major constituent of the matrix. An example of this is the measurement of hydrogen concentration in a metallic matrix. In all such cases, a major contributor to the uncertainty in the measurement is the uncertainty in the ratio of the high-purity germanium (HPGe) detector full-energy peak efficiency for the gamma-ray lines of interest (i.e., impurity and matrix gammas). Usually, the ratio is derived from the relative peak efficiency curve, which is determined using isotopic standards that emit multiple gamma ray lines (e.g., "1"5"2Eu) in the energy range <3000 keV, or using prompt gamma radionuclides (e.g., "1"4N, "3"5Cl) in the energy range >3000 keV. In either case, the uncertainty in the ratio of the peak efficiency values derived from such measurements will be on ...
2001-06-17
Variability and spectral modeling of the hard X-ray emission of GX 339-4 in a bright low/hard state
We study the high-energy emission of the Galactic black hole candidate GX 339-4 using INTEGRAL/SPI and simultaneous RXTE/PCA data. By the end of January 2007, when it reached its peak luminosity in hard X-rays, the source was in a bright hard state. The SPI data from this period show a good signal to noise ratio, allowing a detailed study of the spectral energy distribution up to several hundred keV. As a main result, we report on the detection of a variable hard spectral feature (>150 keV) which represents a significant excess with respect to the cutoff power law shape of the spectrum. The SPI data suggest that the intensity of this feature is positively correlated with the 25 - 50 keV luminosity of the source and the associated variability time scale is shorter than 7 hours. The simultaneous PCA data, however, show no significant change in the spectral shape, indicating that the source is not undergoing a canonical ...
2010-01-01
International Nuclear Information System (INIS)
We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ion energy of 3 keV after annealing at 400degC. (author).
Energy Technology Data Exchange (ETDEWEB)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the range of annealing ...
1997-11-01
International Nuclear Information System (INIS)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n ...
Nanoporous structure formations on germanium surfaces by focused ion beam irradiations
International Nuclear Information System (INIS)
The formation of porous structures of nanometre size (nanoporous structures) on germanium (Ge) surfaces by focused ion beam (FIB) irradiations was investigated using various FIB conditions such as ion species, irradiation energies, total fluences, fluence rates, and incident angles. FIB-irradiated regions were observed using a scanning electron microscope and an atomic force microscope. It is found that, using a focused Ga ion beam (Ga FIB) at an energy of 100 keV, the irradiated Ge surface swelled up to ion fluence of 2 x 10"1"7 cm"-"2 with nanoporous structures and then was etched for larger fluences. The shape of swollen nanoporous structures depended on the fluence rate and the incident angle of the Ga FIB. However, such porous structures were observed neither for low-energy (15-30 keV) FIB irradiations using Si and Au ions nor for high-energy (200 keV), heavy ion (Au) irradiation. These observations might be helpful in ...
2007-11-07
Measurement of relative K X-ray intensity ratio following radioactive decay and photoionization
Energy Technology Data Exchange (ETDEWEB)
The measurements of the K X-ray intensity ratio I(K{alpha} {sub 2}/K{alpha} {sub 1}), I(K{beta} {sub 1}/K{alpha} {sub 1}) and I(K{beta}/K{alpha}) for elements V, Mn, Zn, Tc, Ru, Cd, Xe, Ba, Cs, Hg and Rn were experimentally determined both by photon excitation, in which 59.5 keV {gamma}-rays from a {sup 241}Am and 123.6 keV {gamma}-rays from a {sup 60}Co were used, and following the radioactive decay of {sup 51}Cr, {sup 55}Fe, {sup 67}Ga, {sup 99}Tc, {sup 111}In, {sup 131}I, {sup 133}Ba, {sup 133}Xe, {sup 137}Cs, {sup 201}Tl and {sup 226}Ra. K X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the theoretical values. It was observed that present values agree with the previous theoretical and other experimental results.
2007-01-15
Measurement of relative K X-ray intensity ratio following radioactive decay and photoionization
International Nuclear Information System (INIS)
The measurements of the K X-ray intensity ratio I(K#alpha# _2/K#alpha# _1), I(K#beta# _1/K#alpha# _1) and I(K#beta#/K#alpha#) for elements V, Mn, Zn, Tc, Ru, Cd, Xe, Ba, Cs, Hg and Rn were experimentally determined both by photon excitation, in which 59.5 keV #gamma#-rays from a "2"4"1Am and 123.6 keV #gamma#-rays from a "6"0Co were used, and following the radioactive decay of "5"1Cr, "5"5Fe, "6"7Ga, "9"9Tc, "1"1"1In, "1"3"1I, "1"3"3Ba, "1"3"3Xe, "1"3"7Cs, "2"0"1Tl and "2"2"6Ra. K X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the theoretical values. It was observed that present values agree with the previous theoretical and other experimental results.
2007-01-01
Focused ion beam processes for high-T/sub c/ superconductors
International Nuclear Information System (INIS)
Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.
Energy Technology Data Exchange (ETDEWEB)
The peak flux relationship between hard X-rays and microwaves from solar flares is studied using about 400 events simultaneously recorded with the hard X-ray burst spectrometer on the SMM satellite and the Nobeyama 17 GHz radiometer. The data indicate that the hard X-ray and microwave peak fluxes correlate best for X-ray energies of less than about 80 keV for impulsive flares and greater than about 360 keV for extended flares. By postulating that electrons responsible for microwave emission at 17 GHz are those emitting hard X-rays at these photon energies, it is concluded that: (1) in impulsive flares, microwaves at about 20 GHz are emitted mainly by electrons of less than about 200 keV from a layer through which the electrons stream down into the thick-target hard X-ray source; and (2) in extended flares, microwaves are emitted mainly by MeV electrons trapped in a coronal loop or loops. 59 references.
1988-01-01
Comparison of beam-induced deposition using ion microprobe
International Nuclear Information System (INIS)
The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within #approx#3 #mu#m. The Ga incorporation by dual beam processing was reduced compared with that by ...
1999-01-02
Accretion Properties of A Sample of Hard X-ray (<60keV) Selected Seyfert 1 Galaxies
We examine the accretion properties in a sample of 42 hard (3-60keV) X-ray selected nearby broad-line AGNs. The energy range in the sample is harder than that usually used in the similar previous studies. These AGNs are mainly complied from the RXTE All Sky Survey (XSS), and complemented by the released INTEGRAL AGN catalog. The black hole masses, bolometric luminosities of AGN, and Eddington ratios are derived from their optical spectra in terms of the broad H$\\beta$ emission line. The tight correlation between the hard X-ray (3-20keV) and bolometric/line luminosity is well identified in our sample. Also identified is a strong inverse Baldwin relationship of the H$\\beta$ emission line. In addition, all these hard X-ray AGNs are biased toward luminous objects with high Eddington ratio (mostly between 0.01 to 0.1) and low column density ($<10^{22} \\mathrm{cm^{-2}}$), which is most likely due to the selection effect of the surveys. The hard ...
2008-01-01
International Nuclear Information System (INIS)
Total M shell X-ray production cross section for 11 elements with 69 #<=# Z #<=# 92 have been measured using an incident photon energy of 5.96 keV. Measurements have been performed using an "5"5Fe annular source and a Si(Li) detector. Average M shell fluorescence yield at each incident photon energy has been deduced, using the experimental total M X-ray production cross section and theoretical M shell photoionization cross section. Present experimental results are compared with other experimental and theoretical values. Reasonable agreement (to within 0.3-28%) is typically obtained between present and other experimental and theoretical values.
2005-04-01
International Nuclear Information System (INIS)
The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.
2005-11-20
The Micro-X Imaging Spectrometer Instrument
The Micro-X instrument is a NASA funded, rocket borne X-ray imaging spectrometer planned for launch in January 2011. An array of Transition Edge Sensors (TESs) will observe incoming photons in the 0.2-3 keV energy band with an energy resolution of 2-4 eV at 1 keV. This will be a substantial improvement over current non-dispersive detectors for X-ray spectroscopy of extended sources and will be the first demonstration of a TES-based microcalorimeter in space. The TESs will utilize the 50 mK stage of an Adiabatic Demagnetization Refrigerator (ADR) as a heat sink, and will be read out by a SQUID time division multiplexer. X-rays will be focused onto the TES array of 128 pixels on a 600 micron pitch by a conically approximated Wolter optic with an effective area of 200 cm2. The spectrometer will have a field of view of 11.8 arcmin. We describe the design and development progress of the instrument.
2010-01-01
Study of point defect detectors in Si
International Nuclear Information System (INIS)
The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well
1999-05-01
International Nuclear Information System (INIS)
The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. From the coincidence data, the new decay scheme was constructed. The previously reported 104.70, 105.95 and 774.15 keV #gamma# rays were observed, and have been assigned to the decay scheme for the first time. A newly observed 1508.01 keV #gamma# ray has also been assigned to the scheme for the first time. The intensities of #beta#"- and the values of log ft to most levels were calculated
2000-04-01
Structure of Heavy Fe Nuclei at the Point of Transition at N #approx# 37
International Nuclear Information System (INIS)
We have studied energy levels in "6"3Fe populated in the #beta#-decay of "6"3Mn. A new (preliminary) level scheme of "6"3Fe includes 10 excited states connected by 21 #gamma#-rays. The first excited states at 357 and 451 keV have the level half-lives of 110 ps and 780 ps, respectively. Three states, at 357, 451 and 1132 keV, are strongly #beta#-fed with log ft #approx# 5, while there is only a very week #beta#-feeding, if any at all, to the ground state. The new results imply that "6"3Fe departs from a simple shell model structure observed for heavier N = 37 isotones of "6"5Ni and "6"7Zn. (author)
2009-03-01
International Nuclear Information System (INIS)
The L-shell x-ray intensity ratios I(L_#beta#)/I(L_#alpha#) and I(L_#gamma#)/I(L_a_l_p_h_a) for elements with 73 #<=# Z #<=# 83 have been measured at photon incident energies of 17.8, 25.8 and 46.9 keV. The emitted x-rays were measured with a Si(Li) detector system. The results for Re, Pt and Tl are being reported for the first time. A comparison is made of the experimental results with the calculated values obtained by using the theoretical x-ray emission rates, subshell ionisation cross sections, subshell fluorescence yields and Coster-Kronig transition probabilities. The experimental results are in reasonable agreement with the theoretical values. (author).
1988-01-01
International Nuclear Information System (INIS)
Gamma ray spectra in the decay of 185Ta and 185mW have been studied with Ge (Li) detectors. The 185mW isomeric transition at 131.6 keV is shown to be of E3 multipolarity. A level scheme of 185W is proposed with the following energy levels (energies in keV, spin and K quantum numbers in brackets): 0 (3/2- 3/2), 23.5 (1/2- 1/2), 65.9 (5/2- 3/2), 93.5 (3/2- 1/2) (uncertain), 173.9 (7/2- 3/2), 188.1 (5/2- 1/2), 197.5 (11/2+ 11/2) , 243.5 (7/2- 7/2), and 390.8 (9/2- 7/2)
1996-03-04
Nuclear structure studies via neutron interactions
Energy Technology Data Exchange (ETDEWEB)
Research preformed consisted of: (1) publication of an experimental paper for the n + {sup 40}Ar high resolution total cross section and submission of a theoretical paper dealing with the prediction of the average parameters deduced from the the data; (2) preliminary R-matrix analysis of the neutron total cross section data for the n + {sup 208}Pb systems, up to an energy of 1.7 MeV; (3) completed the analysis of neutron total cross section of data for n + {sup 54}Fe up to energy of 500 keV, with j{sup {pi}} values confirmed, in most cases, by differential scattering data; (4) analysis of total cross section data for the n + {sup 88}Sr system up to an energy of 175 keV; (5) development of a graphical interface for the code RFUNC, used to calculate the differential scattering cross sections, for comparison with measurements.
1991-03-01
International Nuclear Information System (INIS)
The MCNPE-BO and MCNP4 Monte Carlo electron-photon codes were used to calculate the dose equivalent per unit fluence at various depths in tissue-equivalent slab phantoms for broad parallel beams of monoenergetic electrons with energies from 50 keV to 10 MeV. The study was carried out in the framework of the activities of a ICRP/ICRU Joint Task Group with the support of EURADOS WG4 (Numerical Dosimetry). Some preliminary results and comparisons as well as a general discussion on the performances of the codes are presented, demonstrating quite a satisfactory agreement among the results obtained using the two codes and those of other authors. (author).
International Nuclear Information System (INIS)
An ytterbium-169 high dose rate brachytherapy source, distinguished by an intensity-weighted average photon energy of 92.7 keV and a 32.015#+-#0.009 day half-life, is characterized in terms of the updated AAPM Task Group Report No. 43 specifications using the MCNP5 Monte Carlo computer code. In accordance with these specifications, the investigation included Monte Carlo simulations both in water and air with the in-air photon spectrum filtered to remove low-energy photons below 10 keV. TG-43 dosimetric data including S_K, D(r,#theta#), #LAMBDA#, g_L(r), F(r,#theta#), #phi#_a_n(r), and #phi#_a_n were calculated and statistical uncertainties in these parameters were derived and calculated in the appendix.
2006-01-01
Microprobe RBS analysis of localized processed areas by FIB etching and deposition
International Nuclear Information System (INIS)
Localized beam-processed areas using chemical reactions induced by a 30 keV Ga"+ focused ion beam (FIB) with and without I_2 (etching) and (CH_3)_3CH_3C_5H_5Pt gases (Pt deposition) have been analyzed using a 300 keV Be"2"+ microprobe with a beam spot size of 50-80 nm. The analyzed results have been compared with energy dispersive X-ray (EDX) analysis using an electron beam. The EDX analysis only indicated incorporated impurities at high fluence such as Ga, Pt and C, while microprobe RBS analysis could detect residual iodine with low concentration which couldn't be detected by EDS analysis because of the lower sensitivity of the EDX analysis for heavy atoms.
2001-07-01
Light emission from hydrogen-copper interaction at grazing incidence
Energy Technology Data Exchange (ETDEWEB)
The optical emission of excited H reflected from clean Cu(110) after impingement of H/sup +/ and H/sub 2//sup +/ in the energy range of 250 eV to 20 keV per nucleon at 70/sup 0/ angle of incidence to the surface normal was measured. For incident 10 keV H/sub 2//sup +/, the highest excited hydrogen state detected was the n=10 level. The Hsub(..cap alpha..) yield was found to be fluence and energy dependent. This effect is attributed either to fast sputtered hydrogen, surface roughness or to an increase with hydrogen concentration in electron states of p-like symmetry near the Fermi level of copper. The Hsub(..cap alpha..) yield per reflected nucleon shows approximately an exponential dependence on both projectile energy per nucleon and scattered particle reciprocal velocity perpendicular to the surface.
1984-03-01
Light emission from hydrogen-copper interaction at grazing incidence
International Nuclear Information System (INIS)
The optical emission of excited H reflected from clean Cu(110) after impingement of H"+ and H_2"+ in the energy range of 250 eV to 20 keV per nucleon at 70"0 angle of incidence to the surface normal was measured. For incident 10 keV H_2"+, the highest excited hydrogen state detected was the n=10 level. The Hsub(#alpha#) yield was found to be fluence and energy dependent. This effect is attributed either to fast sputtered hydrogen, surface roughness or to an increase with hydrogen concentration in electron states of p-like symmetry near the Fermi level of copper. The Hsub(#alpha#) yield per reflected nucleon shows approximately an exponential dependence on both projectile energy per nucleon and scattered particle reciprocal velocity perpendicular to the surface. (orig.).
1983-07-01
Focused Ion Beam Induced Effects on MOS Transistor Parameters
Energy Technology Data Exchange (ETDEWEB)
We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.
1999-07-28
Energy Technology Data Exchange (ETDEWEB)
The energy dispersive beamline X6A at the National Synchrotron Light Source employs a curved crystal monochromator (polychromator) which focuses a range ([similar to]1 keV) of x-ray energies into a narrow (100--120 [mu]m) line image. Although this beamline was constructed primarily for time-dependent EXAFS experiments, we have begun to explore the use of this instrument for energy dispersive diffraction experiments with different types of sample including macromolecular crystals. The tunability ([ital E]=6.5 to 21 keV) and flexibility ([Delta][ital E]=100--1000 eV) of the instrument makes the beamline ideal as a test bed for the application of polychromatic single-crystal diffraction techniques to different chemical or biological materials.
1995-02-01
Energy Technology Data Exchange (ETDEWEB)
The measurements of the K X-ray intensity ratio I(K{sub {beta}})/I(K{sub {alpha}}) for the 17 elements Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Rb, Sr, Y, Zr, Nb and Mo have been done following ionization by 59.5keV {gamma}-rays from a {sup 241}Am point source. Ratios of emission probabilities of Auger electrons and the vacancy transfer coefficients have been extracted in terms of the intensity ratios. It is found that the present results agree well with earlier fitted values and the semi-empirical values.
2006-01-15
Characteristics of wave-particle interaction in a hydrogen plasma
International Nuclear Information System (INIS)
We study the characteristics of cyclotron wave-particle interaction in a typical hydrogen plasma. The numerical calculations of minimum resonant energy Emin, resonant wave frequency ?, and pitch angle diffusion coefficient D?? for interactions between R-mode/L-mode and electrons/protons are presented. It is found that Emin decreases with ? for R-mode/electron, L-mode/proton and L-mode/electron interactions, but increase with ? for R-mode/proton interaction. It is shown that both R-mode and L-mode waves can efficiently scatter energetic (10 keV-100 keV) electrons and protons and cause precipitation loss at L=4, indicating that perhaps wave-particle interaction is a serious candidate for the ring current decay. (authors)
2008-09-01
Atomic scale models of Ion implantation and dopant diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.
1999-03-01
International Nuclear Information System (INIS)
L_#alpha#/L_l X-ray intensity ratios have been measured in elements Ta, W, Au, Hg, Tl, Pb, Bi, Th and U using L-shell photoionization by 60 keV photons. The present results are found to agree with the calculated values of Scofield within experimental uncertainties. (author).
1983-11-21
Search for anisotropy in the L x-gamma angular correlations following the decay of "2"0"7Bi
International Nuclear Information System (INIS)
An investigation of the Ll x-#gamma# angular correlations following the decay of "2"0"7Bi is done by using a Si(Li) semiconductor counter as L x-ray detector. Coincidence measurements at five different angles were made between the 570-keV #gamma# ray (gated in the movable counter) and the Ll x spectrum (displayed in a multichannel analyzer).
International Nuclear Information System (INIS)
The spectrometric methods and equipment for "2"0"1Pb and "2"0"1Tl activity control in the prepared thallium chloride in industrial production are described. Estimation of thallium-201 activity is carried out in accord with the square of summary photopeak caused by #gamma#-quanta at 167 keV energy. Attenuation is paid to spectrometer calibration. 5 refs.; 2 figs.; 2 tabs.
Radiochemistry of lead-203 for radiolabelling antibody conjugates
International Nuclear Information System (INIS)
Lead-203 [52.1 h, 279 (80.1%) KeV] has been recognized as a potentially useful tracer for tumor specific radiopharmaceuticals due to its favorable nuclear and chemical properties. This paper reports the cyclotron production of lead-203 and the labelling of monoclonal antibody B72.3, conjugated with 2-(p-isothiocyanatobenzyl)DOTA, with lead-203 in 30% yield. In vivo biodistribution and stability studies in mice are being conducted.
1990-06-24
Quantitative phase imaging using hard x-rays
International Nuclear Information System (INIS)
The quantitative imaging of a phase object using 16 keV x-rays is reported. The theoretical basis of the techniques is presented along with its implementation using a synchrotron x-ray source. It is found that the phase image is in quantitative agreement with independent measurements of the object. 13 refs., 5 figs.
2009-02-01
Portable real time neutron spectrometry II
International Nuclear Information System (INIS)
We describe the continued development of a portable, real-time neutron spectrometer. The spectrometer is composed of two distinct detector systems: a Helium 3 gas filled proportional counter for the lower neutron energy interval between 20 KeV and 2 MeV and a bulk silicon solid state detector for the higher energy interval between 2 MeV and 500 MeV. Modeling and experimental results with mono-energetic neutron beams are reported.
2000-01-19
Photodetachment of negative ion beams in the presence of a background gas
Energy Technology Data Exchange (ETDEWEB)
To suppress space charge blowup in an ion beam passing through a photoneutralizer, it is necessary to introduce some background gas. An analysis is presented of the neutralization of a high-energy, >200-keV negative deuterium ion beam, exposed to photodetachment while in the presence of deuterium. With a gas thickness of <0.01 Torr.cm, the neutral fraction in the output beam is found to be about the same as that gotten from the photoneutralizer operating in vacuum. Neutral atom beam injection for plasma heating is discussed.
1987-03-01
Peculiarities of Swift Proton Transmission through Tapered Glass Capillaries
International Nuclear Information System (INIS)
A study of the 150-300 keV proton beam transmission through glass (borosilicate) tapered capillaries with different diameters of the input and output of the capillary was performed. The focusing effect was observed. The areal density of the transmitted beam is enhanced by approximately 20 times. It was shown that changing a taper angle from 0.5 deg to 1.7 deg evidences the increase of the transmission coefficient more than by 300 times keeping the initial energy spectrum of ions. (author)
2011-07-01
Optical and statistical model calculation of the americium 242m capture cross section
International Nuclear Information System (INIS)
The capture cross sections of Am 242m can be deduced from resonances analysis at low energy and computed with theoretical models at high energy. In this work, a coherent set of cross sections which reproduced the experimental values of the fission cross sections is computed. These calculations were performed for an energy of the incoming neutron between 1 keV and 1 MeV.
Molar extinction coefficients in aqueous solutions of some alkaline earth chlorides
International Nuclear Information System (INIS)
Molar extinction coefficients for the solid solutes in aqueous solutions of some alkaline earth chlorides such as MgCl_2.6H_2O, CaCl_2, SrCl_2.6H_2O and BaCl_2.2H_2O have been determined at 81, 356, 511, 662, 1173 and 1332 keV energies in different concentration using the narrow beam transmission methods. (author)
1999-12-21
Magnetic moments of "1"7"7Ta apd sup(181,182,187)Re states
International Nuclear Information System (INIS)
The magnetic moments of "1"7"7Ta and sup(181,182,187)Re levels decaying via the K-forbidden transitions are measured. The nuclei studied are produced via the "1"7"7W and sup(181,182)Os and "1"8"7W #beta#-decay respectively. The magnetic moments have been measured using the method of the differential #gamma##gamma# angular correlations, perturbed by an external magnetic field. The following magnetic moments and lifetimes are obtained: for the 5/2"-1/2"-[541] "1"8"1Re level with excitation energy of 357 keV #mu#/#mu#sub(n)=2.00+-0.10, Tsub(1/2)=(76+-8)x10sup(-8) s; for the 186.4 keV 5/2"-1/2"-[541] "1"7"7Ta level #mu#/#mu#sub(n)=2.02+-0.13, Tsub(1/2)=(2.78+-0.09)x10sup(-6) s; for the 236 keV 2"- "1"8"2Re level #mu#/#mu#sub(n)=2.12+-0.08; for the 203 keV 9/2"- [514] "1"8"7Re level #mu#/#mu#sub(n)=5.04+-0.09.
1978-03-01
Magnetic moment of the three-quasiparticle state in /sup 177/Ta
Energy Technology Data Exchange (ETDEWEB)
An experimental investigation was made of the ..gamma..-transitions feeding or de-exciting the 1355 keV isomeric state in /sup 177/Ta. The E2/M1 mixing ratios for the 311 keV interband transition from the isomer and for the 271 keV and the 295 keV intraband transitions within the rotational band on the isomer were determined to be delta = 0.29sup(+0.11)sub(-0.06), 0.25sup(+0.05)sub(-0.03) and 0.30sup(+0.06)sub(-0.08), respectively, employing combined measurements of the linear polarization and angular distribution of the ..gamma..-ray with the aid of conversion electron measurements. Spin and parity assignments of the isomer were confirmed to be 21/2/sup -/. The half-life of the isomer was remeasured to be Tsub(1/2) = 5.0 +- 0.2 ..mu..s and the magnetic moment was found to be ..mu.. = 0.080 +- 0.014 ..mu..sub(N). The gsub(K) and gsub(R) factors for the band on the isomer were deduced separately to be ...
1982-06-07
Magnetic moment of the three-quasiparticle state in "1"7"7Ta
International Nuclear Information System (INIS)
An experimental investigation was made of the #gamma#-transitions feeding or de-exciting the 1355 keV isomeric state in "1"7"7Ta. The E2/M1 mixing ratios for the 311 keV interband transition from the isomer and for the 271 keV and the 295 keV intraband transitions within the rotational band on the isomer were determined to be delta = 0.29sup(+0.11)sub(-0.06), 0.25sup(+0.05)sub(-0.03) and 0.30sup(+0.06)sub(-0.08), respectively, employing combined measurements of the linear polarization and angular distribution of the #gamma#-ray with the aid of conversion electron measurements. Spin and parity assignments of the isomer were confirmed to be 21/2"-. The half-life of the isomer was remeasured to be Tsub(1/2) = 5.0 +- 0.2 #mu#s and the magnetic moment was found to be #mu# = 0.080 +- 0.014 #mu#sub(N). The gsub(K) and gsub(R) factors for the band on the isomer were deduced separately to be gsub(K=21/2"-) = ...
Intensity of auger-emission of silicon from binary compounds in the ion auger spectroscopy
International Nuclear Information System (INIS)
Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.
Final Report: Planetary Instrument Definition and Design Program (PIDDP) Support Project
Energy Technology Data Exchange (ETDEWEB)
The results of Sandia National Laboratories' participation in the NASA Planetary Definition and Design Program are summarized. Areas reported include the characterization of large area cadmium zinc telluride spectrometers and the application of simulation techniques to the prediction of device performance. Also investigated was the response of mercuric iodide devices in the region from 1 to 100 KeV. A literature study to determine the status or radiation damage measurements in room temperature semiconductor devices is also reported.
1999-03-01
International Nuclear Information System (INIS)
The Ksub(#beta#)/Ksub(#alpha# 12) x-ray intensity ratio of the Si K spectrum was measured for proton impact on Si0_2 in the energy range 300-800 keV. An energy dependence of the intensity ratio was found and an explanation is given in terms of multiple ionisation. (author).
1980-04-01
Double-electron-capture cross section for I/sup +/ in a magnesium-vapor target
Energy Technology Data Exchange (ETDEWEB)
Measurements of the double-electron-capture process in which a positive ion of iodine becomes a negative ion in a single collision with a magnesium atom are reported between 20 and 90 keV. The cross section is comparable to that for the rare gases and not as large as might be expected from a two-valence-electron atom. This process is probably insignificant in the production of negative ion beams using a magnesium-vapor target.
1987-06-15
Energy Technology Data Exchange (ETDEWEB)
The INTEGRAL/SPI spectrometer was designed to observe the sky in the energy band of 20 keV to 8 MeV. The specificity of instrument SPI rests on the excellent spectral resolution (2.3 keV with 1 MeV) of its detecting plan, composed of 19 cooled germanium crystals; covering an effective area of 508 cm{sup 2}. The use of a coded mask, located at 1.7 m above the detection plan ensures to it a resolving power of 2.5 degrees. The aim of this thesis, begun before the INTEGRAL launch, is made up of two parts. The first part relates to the analysis of the spectrometer calibration data. The objective was to measure and check the performances of the telescope, in particular to validate simulations of the INTEGRAL/SPI instrument response. This objective was successfully achieved. This analysis also highlights the presence of a significant instrumental background noise. Whereas, the second part concentrates on the data analysis of the Vela region ...
2005-01-15
Decay of "1"0"1Mo and band structures of its daughter nuclide "1"0"1Tc in the projected shell model
International Nuclear Information System (INIS)
The decay of molybdenum-101 has been investigated using the three-parameter (#gamma#-#gamma#-t) coincidence system of HPGe-HPGe detectors. According to the off-line analysis, the decay scheme was modified. The positions of 221.80, 318.00, 377.90; 452.50, 515.42, 1011.05, and 1759.72 keV transitions have been arranged again, the transition positions of 104.70, 105.95, and 774.15 keV gamma rays have been assigned for the first time, the positions of 169.00, 590.91, 980.52, and 1431.68 keV transitions have been reconfirmed, and the 1508.01 keV gamma ray was observed simultaneously for the first time and its transition position has been assigned. The #beta#"- intensities and the values of log ft of most levels were calculated. Combining with the high-spin states observed by the in-beam #gamma#-ray spectroscopy of previous decay works, the structure of the excited positive/negative-parity yrast states of ...
2006-01-01
Complete spectroscopy of "8"7","8"8","8"9Sr with (n,#gamma#) and (d,p) reactions?
International Nuclear Information System (INIS)
We conducted (n, #gamma#) and (d, p) reactions leading to "8"7", "8"8", "8"9"Sr in addition to "8"8Sr (d, t) "8"7Sr and 24 keV neutron capture in "8"8Sr. (orig./HSI).
Chemical effects on L_#gamma#_1/L_#beta#_1 x-ray intensity ratio of molybdenum compounds
International Nuclear Information System (INIS)
Chemical effects on the intensity ratio of LX-ray of molybdenum compounds irradiated by 11-keV electrons and by 3-MeV protons were studied using an x-ray crystal spectrometer. It was found that the intensity ratios of L_#gamma#_1/L_#beta#_1 markedly decrease with the increase of ionicity of molybdenum compounds, except for the case of metallic molybdenum. (author).
1987-06-01
International Nuclear Information System (INIS)
1 - Description of program or function: MCB-JEF2.2 is a continuous-energy cross section libraries in ACE Format suitable for the MCB-1C and MCNP codes. Libraries for various materials were generated at six different Temperatures, and cover the energy range up to 20 MeV. Format: ACE. Number of groups: Continuous energy. Nuclides: H-1, H-2, H-3, He-3, He-4, Li-6, Li-7, Be-9, B-10, B-11, C-nat., N-14, N-15, O-16, O-17, Na-23, F-19, Mg-nat., Al-27, Si-nat., P-31, S-32, S-33, S-34, S-36, Cl-nat, K-nat, Ca-nat., Ti-nat, V-nat, Cr-50, Cr-52, Cr-53, Cr-54, Mn-55, Fe-54, Fe-56, Fe-57, Fe-58, Co-59, Ni-58, Ni-59, Ni-60, Ni-61, Ni-62, Ni-64, Cu-nat, Ga-nat, Ge-72, Ge-73, Ge-74, Ge-76, As-75, Se-74, Se-76, Se-77, Se-78, Se-80, Se-82, Br-79, Br-81, Kr-78, Kr-80, Kr-82, Kr-83, Kr-84, Kr-85, Kr-86, Rb-85, Rb-86, Rb-87, Sr-84, Sr-86, Sr-87, Sr-88, Sr-89, Sr-90, Y-89, Y-90, Y-91, Zr-nat, Zr-90, Zr-91, Zr-92, Zr-93, Zr-94, Zr-95, Zr-96, Nb-93, Nb-94, Nb-95, Mo-nat, Mo-92, Mo-94, Mo-95, Mo-96, Mo-97, ...
International Nuclear Information System (INIS)
1 - Description of program or function: Format: MATXS; Number of groups: 175 neutron-, 42 photon-groups; 176 Nuclides: 1-H-1, 1-H-2, 1-H-3, 2-He-3, 2-He-4, 3-Li-6, 3-Li-7, 4-Be-9, 5-B-10, 5-B-11, 6-C- nat., 7-N-14, 7-N-15, 8-O-16, 8-O-17, 9-F-19, 11-Na-23, 12-Mg-nat., 13-Al-27, 14-Si-nat., 14-Si-28, 14-Si-29, 14-Si-30, 15-P-31, 16-S-32, 17-Cl-nat., 19-K-nat., 20-Ca-nat., 21-Sc-45, 22-Ti-nat., 23-V-nat., 24-Cr-50, 24-Cr-52, 24-Cr-53, 24-Cr-54, 25-Mn-25, 26-Fe-54, 26-Fe-56, 26-Fe-57, 26-Fe-58, 27-Co-59, 28-Ni-58, 28-Ni-60, 28-Ni-61, 28-Ni-62, 28-Ni-64, 29-Cu-63, 29-Cu-65, 31-Ga-nat., 39-Y-89, 40-Zr-nat., 40-Zr-90, 40-Zr-91, 40-Zr-92, 40-Zr-94, 40-Zr-96, 41-Nb-93, 42-Mo-nat., 46-Pd-102, 46-Pd-104, 46-Pd-105, 46-Pd-106, 46-Pd-108, 46-Pd-110, 47-Ag-107, 47-Ag-109, 48-Cd-106, 48-Cd-108, 48-Cd-110, 48-Cd-112, 48-Cd-113, 48-Cd-114, 48-Cd-116, 49-In-nat., 53-I-127, 54-Xe-124, 54-Xe-126, 54-Xe-128, 54-Xe-129, 54-Xe-130, 54-Xe-131, 54-Xe-132, 54-Xe-134, 54-Xe-136, 55-Cs-133, 56-Ba-138, 59-Pr-141, ...
Transient enhanced diffusion of Sb and B due to MeV silicon implants
Energy Technology Data Exchange (ETDEWEB)
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at ...
1997-06-01
Transient enhanced diffusion of Sb and B due to MeV silicon implants
International Nuclear Information System (INIS)
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same ...
International Nuclear Information System (INIS)
High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is ...
2005-02-15
The effect of boron implant energy on transient enhanced diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results imply there are at least ...
1997-02-01
Suzaku and Optical Spectroscopic Observations of SS 433 in the 2006 April Multiwavelength Campaign
We report results of the 2006 April multi-wavelengths campaign of SS 433, focusing on X-ray data observed with Suzaku at two orbital phases (in- and out-of- eclipse) and simultaneous optical spectroscopic observations. By analyzing the Fe25 K_alpha lines originating from the jets, we detect rapid variability of the Doppler shifts, dz/dt ~ 0.019/0.33 day^-1, which is larger than those expected from the precession and/or nodding motion. This phenomenon probably corresponding to "jitter" motions observed for the first time in X-rays, for which significant variability both in the jet angle and intrinsic speed is required. From the time lag of optical Doppler curves from those of X-rays, we estimate the distance of the optical jets from the base to be ~(3-4) \\times 10^14 cm. Based on the radiatively cooling jet model, we determine the innermost temperature of the jets to be T_0 = 13 +/- 2 keV and 16 +/- 3 keV (the average of the blue and red jets) ...
2010-01-01
Sr-88 and Y-89 - The s-process at magic neutron number N = 50
Energy Technology Data Exchange (ETDEWEB)
The neutron capture cross sections of Sr-88 and Y-89 were measured in a quasi-stellar neutron spectrum for kT = 25 keV via the activation method. Relevant systematic uncertainties were determined experimentally by repeated activations under different conditions and with different samples. Gold was used as a cross section standard. The resulting stellar cross sections for kT = 30 keV are 6.13 + or - 0.18 mbarn for Sr-88 and 19.0 + or - 0.6 mbarn for Y-89. The partial cross section Sr-86(n, gamma) Sr-87m was measured to 48.1 + or - 1.2 mbarn. Compared to previous data, the associated uncertainties are reduced by factors of 3 and 5, respectively. The implications for s-process nucleosynthesis around magic neutron number N = 50 are discussed in the light of new information on neutron density and temperature. 38 refs.
1990-05-01
Sr-88 and Y-89 - The s-process at magic neutron number N = 50
International Nuclear Information System (INIS)
The neutron capture cross sections of Sr-88 and Y-89 were measured in a quasi-stellar neutron spectrum for kT = 25 keV via the activation method. Relevant systematic uncertainties were determined experimentally by repeated activations under different conditions and with different samples. Gold was used as a cross section standard. The resulting stellar cross sections for kT = 30 keV are 6.13 + or - 0.18 mbarn for Sr-88 and 19.0 + or - 0.6 mbarn for Y-89. The partial cross section Sr-86(n, gamma) Sr-87m was measured to 48.1 + or - 1.2 mbarn. Compared to previous data, the associated uncertainties are reduced by factors of 3 and 5, respectively. The implications for s-process nucleosynthesis around magic neutron number N = 50 are discussed in the light of new information on neutron density and temperature. 38 refs.
Sr-88 and Y-89 - The s-process at magic neutron number N = 50
The neutron capture cross sections of Sr-88 and Y-89 were measured in a quasi-stellar neutron spectrum for kT = 25 keV via the activation method. Relevant systematic uncertainties were determined experimentally by repeated activations under different conditions and with different samples. Gold was used as a cross section standard. The resulting stellar cross sections for kT = 30 keV are 6.13 + or - 0.18 mbarn for Sr-88 and 19.0 + or - 0.6 mbarn for Y-89. The partial cross section Sr-86(n, gamma) Sr-87m was measured to 48.1 + or - 1.2 mbarn. Compared to previous data, the associated uncertainties are reduced by factors of 3 and 5, respectively. The implications for s-process nucleosynthesis around magic neutron number N = 50 are discussed in the light of new information on neutron density and temperature.
1990-05-01
Recent neutron scattering work at the University of Lowell
International Nuclear Information System (INIS)
Neutron elastic and inelastic scattering cross sections of _2_3_8U and _2_3_2Th have been measured at the University of Lowell for states below 1.8 MeV. A time-of-flight (TOF) spectrometer was used. The disc-shaped scatterer was oriented to optimize energy resolutions for 200-to-500-keV neutrons. Neutrons were obtained via the _7Li(p,n)_7Be reaction. Targets were prepared by in-situ evaporation of Li onto a Ta backing. During the evaporation, the target thickness was monitored using a 5-m-flight-path TOF spectrometer; a typical target had a neutron thickness from 8 to 10 keV for Esub(p) = 2.25.MeV. Spectra were analyzed using the unfolding code TINA; standard peak shapes were obtained from codes LAGUE and LAPA. Results obtained will be presented.
1981-11-23
Particle-hole strength excited in the /sup 40/Ca(p,n)/sup 40/Sc reaction at 134 MeV
International Nuclear Information System (INIS)
The /sup 40/Ca(p,n)/sup 40/Sc reaction was studied at 134 MeV. Neutron energy spectra were measured by the time-of-flight technique with resolutions of 220 keV at angles from 0"0 to 41"0 and 415 keV out to 62"0. The 2"-,3"-,4"-,5"- band of states based on the (f/sub 7/2/,d/sub 3/2//sup -1/) 1p1h structure was observed at low excitation energies, in good agreement with known analog states in /sup 40/Ca and /sup 40/K. The shapes of the cross-section and analyzing-power angular distributions are in good agreement with distorted-wave impulse-approximation calculations using simple 1p1h (Tamm-Dancoff approximation) shell-model wave functions. A relatively strong transition to a state at E/sub x/ = 2.3 MeV with L = 3 is identified tentatively as a 4"- state with the predominant 1p1h structure (1f/sub 7/2/,2s/sub 1/2//sup -1/).
Oxygen-concentration dependent enhancement of positive secondary ion emission from silicon
Energy Technology Data Exchange (ETDEWEB)
The enhancement of positive secondary ion yields of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In/sup +/ were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5x10/sup 15/ to 4x10/sup 16/ O-atoms/cm/sup 2/. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si/sup +/ intensity is proportional to c(O)sup(x) (with x=1.4) in the concentration regime, 1.5<=c(O)<=30 at%. The O/sup +/ intensity shows a similar dependence for c(O)> or approx.20 at.%.
1983-12-15
Optimization of advanced PMOS junctions using Ge, B and F co-implants
International Nuclear Information System (INIS)
The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized junction on Ge"+ energies of 2keV and ...
2005-08-01
Microstructures for high-energy x-ray and particle-imaging applications
Energy Technology Data Exchange (ETDEWEB)
Coded imaging techniques using thick, micro-Fresnel zone plates as coded apertures have been used to image x-ray emissions (2-20 keV) and 3.5 MeV Alpha particle emissions from laser driven micro-implosions. Image resolution in these experiments was 3-8 ..mu..m. Extension of this coded imaging capability to higher energy x-rays (approx. 100 keV) and more penetrating charged particles (e.g. approx. 15 MeV protons) requires the fabrication of very thick (50-200 ..mu..m), high aspect ratio (10:1), gold Fresnel zone plates with narrow linewidths (5-25 ..mu..m) for use as coded aperatures. A reactive ion etch technique in oxygen has been used to produce thick zone plate patterns in polymer films. The polymer patterns serve as electroplating molds for the subsequent fabrication of the free-standing gold zone plate structures.
1981-05-01
Microstructures for high-energy x-ray and particle imaging applications
Energy Technology Data Exchange (ETDEWEB)
Coded imaging techniques using thick, micro-Fresnel zone plates as coded apertures have been used to image x-ray emission (2--20 keV) and 3.5 MeV Alpha particle emissions from laser driven micro-implosions. Image resolution in these experiments was 3--8 ..mu..m. Extension of this coded imaging capability to higher energy x rays (approx.100 KeV) and more penetrating charged particles (e.g., approx.15 MeV protons) requires the fabrication of very thick (50--200 ..mu..m), high aspect ratio (10:1), gold Fresnel zone plates with narrow linewidths (5--25 ..mu..m) for use as coded apertures. A reactive ion etch technique in oxygen has been used to produce thick zone plate patterns in polymer films. The polymer patterns serve as electroplating molds for the subsequent fabrication of the free-standing gold zone plate structures.
1981-11-01
Microfabrication processes for high-T_c superconducting films
International Nuclear Information System (INIS)
Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si"+ "+ FIB also indicated the possibility to produce submicrometer patterns by selectively modifying film properties from superconductive to normal or ...
International Nuclear Information System (INIS)
The effect of the #+-# 0.75 T external magnetic field on the K_#alpha#_1, K_#alpha#_2, K_#beta#_'_1 and K_#beta#_'_2 x-ray production cross sections and radiative vacancy transfer probabilities from K-shell to L2 and L3 subshells and M-shell for ferromagnetic Nd, Gd and Dy and paramagnetic Eu and Ho have been investigated, using the 59.5 keV incident photons. K-shell fluorescence yields and K x-ray intensity ratios for these elements have been determined in the external magnetic field also. The K x-rays from different targets were detected using a high-resolution Si(Li) semiconductor detector. For B = 0, the present experimental results were compared with the experimental and theoretical data in the literature. The results show that K-shell fluorescence parameters such as photoionization cross section, fluorescence yield, radiation rates, vacancy transfer probabilities and spectral linewidth can change owing to the applied magnetic field. (authors)
2006-06-19
Measurement of the /SUP 242m/ Am neutron fission cross section
Energy Technology Data Exchange (ETDEWEB)
The fission cross section of /SUP 242m/ Am has been measured from 0.005 eV to 20 MeV using time-of-flight techniques at the Oak Ridge Electron Linear Accelerator. A hemispherical plate fission ionization chamber with five pairs of plates contained three deposits totaling 507 ..mu..g of /SUP 242m/ Am, one deposit of 168 ..mu..g /sup 235/U, and a ''weightless'' deposit of /sup 252/Cf, which served as a monitor of chamber performance. The fission of /sup 235/U, served as the cross-section standard for energies above 101 keV while /sup 6/Li(n,..cap alpha..), normalized to /sup 235/U fission in the 7.8- to 11.0-eV interval, served as a shape standard below 101 keV. Approximately 360 h of data were obtained at a flight path distance of 9.1 m, primarily with 40-ns bursts. Particular attention was paid to correction of backgrounds, especially inscattered-neutron-induced events. The fission resonance integral was ...
1983-05-01
Measurement of the /SUP 242m/ Am neutron fission cross section
International Nuclear Information System (INIS)
The fission cross section of /SUP 242m/ Am has been measured from 0.005 eV to 20 MeV using time-of-flight techniques at the Oak Ridge Electron Linear Accelerator. A hemispherical plate fission ionization chamber with five pairs of plates contained three deposits totaling 507 #mu#g of /SUP 242m/ Am, one deposit of 168 #mu#g "2"3"5U, and a ''weightless'' deposit of "2"5"2Cf, which served as a monitor of chamber performance. The fission of "2"3"5U, served as the cross-section standard for energies above 101 keV while "6Li(n,#alpha#), normalized to "2"3"5U fission in the 7.8- to 11.0-eV interval, served as a shape standard below 101 keV. Approximately 360 h of data were obtained at a flight path distance of 9.1 m, primarily with 40-ns bursts. Particular attention was paid to correction of backgrounds, especially inscattered-neutron-induced events. The fission resonance integral was found to be 1800 + or - 65 b.
Measurement of relative L X-ray intensity ratio following radioactive decay and photoionization
International Nuclear Information System (INIS)
The measurements of the L X-ray intensity ratio I(L?)/I(L?), I(L?)/I(L?), I(L?)/I(L?), I(L?)/I(L?) and I(L?)/I(L?) for elements Dy, Ho, Yb, W, Hg, Tl and Pb were experimentally determined both by photon excitation, in which 59.5 keV ?-rays from a filtered radioisotope 241Am was used, and by the radioactive decay of 160Tb, 160Er, 173Lu, 182Re, 201Tl, 203Pb and 207Bi. L X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the calculated theoretical values. Theoretical values of the I(L?/L?), I(L?/L?), I(L?/L?), I(L?/L?) and I(L?/L?) intensity ratios were calculated using theoretically tabulated values of subshell photoionization cross-section, fluorescence yield, fractional X-ray emission rates, Coster-Kronig transition probabilities. It was observed that present values agree with previous theoretical and other available experimental results.
2008-05-22
British Library Electronic Table of Contents (United Kingdom)
The L shell fluorescence cross-sections of the elements in range 45Z50 have been determined at 8keV using Synchrotron radiation. The individual L X-ray photons, Ll, La, LbI, LbII, LgI and LgII produced in the target were measured with high resolution Si(Li) detector. The experimental set-up provided a low background by using linearly polarized monoenergetic photon beam, improving the signal-to-noise ratio. The experimental cross-sections obtained in this work were compared with available experimental data from Scofield [1,2] Krause [3,4] and Scofield and Puri et al. [5,6]. These experimental values closely agree with the theoretical values calculated using Scofield and Krause data, except for the case of Lg, where values measured of this work are slighter higher.
2011-01-01
Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges
Energy Technology Data Exchange (ETDEWEB)
Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.
2003-05-01
Integration and Testing of the Micro-X Rocket Payload
The Micro-X instrument is a rocket borne, X-ray imaging spectrometer planned for launch in October 2011. An array of 128 Transition Edge Sensors (TESs) on a 600 micron pitch will observe incoming photons in the 0.2-3 keV energy band with an energy resolution of 2-4 eV at 1 keV. X-rays will be focused onto the TES array by a conically approximated Wolter optic with an effective area of 300 cm^2 giving the instrument a field of view of 11.8 arcmin. This performance will constitute a substantial improvement over current non-dispersive detectors for X-ray spectroscopy of extended sources and will be the first demonstration of a TES-based microcalorimeter in space. The TESs will utilize the 50 mK stage of an Adiabatic Demagnetization Refrigerator (ADR) as a heat bath, and will be read out by a SQUID time division multiplexer. The first flight of the Micro-X instrument will observe the Puppis A supernova remnant. Future targets include the core of ...
2011-05-01
Energy Technology Data Exchange (ETDEWEB)
For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ...
2000-04-01
International Nuclear Information System (INIS)
For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe"+, 360 keV He"+, and 180 keV H"+ simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% ...
2000-04-01
International Nuclear Information System (INIS)
The energy resolution of small NaI(Tl), CsI(Tl), BGO, GSO, YAP and LSO crystals has been studied using 16 mm diameter large area avalanche photodiodes (LAAPD) and a 52 mm diameter photomultiplier. The best result of 4.8% for 662 keV #gamma#-rays from a "1"3"7Cs source was obtained with a 9 mm in diameter by 9 mm high CsI(Tl) scintillator coupled to an LAAPD. Measuring the number of primary electron-hole pairs produced in the LAAPD and photoelectrons in the photomultiplier, as well as the noise contribution of the LAAPD, allowed a quantitative discussion of the results. The energy resolutions measured with LAAPDs are comparable to, or significantly better (at certain emission wavelengths) than, those obtained with the photomultiplier. At energies above 100 keV the energy resolution measured with the majority of crystals and the LAAPD was weakly affected by the photodiode noise contribution. The advantages and limitations of LAAPDs in energy ...
1998-06-01
Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon
Energy Technology Data Exchange (ETDEWEB)
In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative Ostwald ...
2002-01-01
Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon
International Nuclear Information System (INIS)
In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative Ostwald ripening process during annealing. ...
2002-01-01
Development of high power negative ion sources for fusion at JAERI
Energy Technology Data Exchange (ETDEWEB)
Technologies producing high power negative ion beams have been highly developed in these years at JAERI for use in neutral beam injectors for heating the thermonuclear fusion plasmas. At present, it is possible to produce multi-ampere H-/D- ion beams quasi-continuously at energies more than a few hundred keV with a good beam optics of beamlet divergence of a few milli-radian. Based on these technologies, two R and D projects have been initiated; one is to develop a 22A/500keV/10s D- ion source for the neutral beam injector for JT-60U, and the other is to develop a 1A/1MeV/60s H- ion source to demonstrate high current negative ion acceleration up to the energy of 1MeV, the energy required for the neutral beam injector for International Thermonuclear Experimental Reactor (ITER). (author).
1995-10-01
Development of a fine and ultra-fine group cell calculation code SLAROM-UF for fast reactor analyses
International Nuclear Information System (INIS)
A cell calculation code SLAROM-UF has been developed for fast reactor analyses to produce effective cross sections with high accuracy in practical computing time, taking full advantage of fine and ultra-fine group calculation schemes. The fine group calculation covers the whole energy range in a maximum of 900-group structure. The structure is finer above 52.5 keV with a minimum lethargy width of 0.008. The ultra-fine group calculation solves the slowing down equation below 52.5 keV to treat resonance structures directly and precisely including resonance interference effects. Effective cross sections obtained in the two calculations are combined to produce effective cross sections over the entire energy range. Calculation accuracy and improvements from conventional 70-group cell calculation results were investigated through comparisons with reference values obtained with continuous energy Monte Carlo calculations. It was confirmed that ...
2006-08-01
Energy Technology Data Exchange (ETDEWEB)
A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other ...
2006-07-30
Deposition of Cu film on SiO_2 using a partially ionized beam
International Nuclear Information System (INIS)
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle texture, while the impurity concentration and resisitivity are minimum. The correlation between the structural, compositional and electrical properties ...
1990-01-01
Deposition of Cu film on SiO sub 2 using a partially ionized beam
Energy Technology Data Exchange (ETDEWEB)
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between the structural, compositional and ...
1990-05-01
Deposition of Cu film on SiO sub 2 using a partially ionized beam
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between the structural, compositional and ...
1990-05-01
Corrosion behaviour of molybdenum-implanted stainless steel
Energy Technology Data Exchange (ETDEWEB)
A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of half-implanted samples demonstrates that ...
1990-01-01
Corrosion behaviour of molybdenum-implanted stainless steel
International Nuclear Information System (INIS)
A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of half-implanted samples demonstrates that ...
1989-09-01
Energy Technology Data Exchange (ETDEWEB)
Two measurement methods to determine the rate of neutral free radical production by the photo-deionization of negative ion beams (PDINIB) are introduced. These methods, namely, photoelectron-current measurement by low-frequency electro-modulation probe (PMMP) and measurement of decrease in the negative-ion beam current (DNIC) were employed to evaluate the production rate in a trial surface-processing apparatus developed in the author's laboratory utilizing a steady-flux refined beam of neutral free radicals (RBNR) produced by the PDINIB procedure. A {sup 63}Cu{sup -} negative ion beam of kinetic energy E{sub i} varied up to 15 keV was irradiated with a 514.5 nm visible light beam from a 25 W CW Ar{sup +} ion laser. The detection limit of the production rate by the PMMP setup was as high as 6 x 10{sup 9} s{sup -1} under the condition that E{sub i}=15 keV, the negative-ion beam current I{sub i}=4 {mu}A and the laser power P=6 W. The DNIC ...
2003-05-01
Comparison of LaBr_3:Ce and NaI(Tl) Scintillators for Radio-Isotope Identification Devices
International Nuclear Information System (INIS)
Lanthanum halide (LaBr_3:Ce) scintillators offer significantly better resolution (< 3% at 662 keV) relative to NaI(Tl) and have recently become commercially available in sizes large enough for the handheld, Radio-Isotope Identification Device (RIID) market. Drawbacks to lanthanum halide detectors, however, include internal radioactivity contributing to spectral counts, and a low-energy response which can cause detector resolution to be worse than that of NaI(Tl) below 100 keV. To study the potential of this new material for RIIDs we performed a series of measurements comparing a 1.5 x 1.5-inch LaBr_3:Ce detector with an Exploranium GR-135 RIID, which contains a 1.5 x 2.2-inch NaI(Tl) detector. Measurements were taken for short timeframes, as typifies RIID usage. Measurements included examples of naturally occurring radioactive material (NORM), typically found in cargo, and special nuclear materials. Some measurements were non-contact, ...
2005-10-23
International Nuclear Information System (INIS)
CEA-Valduc produces some radioactive waste (mainly alpha emitters). Legislation requires producers to sort their waste by activity and type of isotopes, and to package them in order to forward them to the appropriate reprocessing or storage facility. Our lab LMDE (laboratory for measurements on nuclear wastes and valuation) is in charge of the characterization of the majority of waste produced by CEA-Valduc. Among non-destructive methods to characterize a radioactive object, gamma-spectroscopy is one of the most efficient. We present to this conference the method we use to characterize nuclear waste and the system we developed to characterize our germanium detectors. The goal of this system is to obtain reliable numerical models of our detectors and calculate their efficiency curves. Measurements are necessary to checks models and improve them. These measurements are made on a bench using pinpoint sources ("1"3"3Ba, "1"5"2Eu) from 60 keV to 1500 ...
2009-06-07
Polarization measurements in the X-ray and gamma-ray energy range can provide crucial information on massive compact objects such as black holes and neutron stars. The Polarized Gamma-ray Observer (PoGO) is a new balloon-borne instrument designed to measure polarization from astrophysical objects in the 30-100 keV range, under development by an international collaboration with members from United States, Japan, Sweden and France. To examine PoGO's capability, a beam test of a simplified prototype detector array was conducted at the Argonne National Laboratory Advanced Photon Source. The detector array consisted of seven plastic scintillators, and was irradiated by polarized photon beams at 60, 73, and 83 keV. The data showed a clear polarization signal, with a measured modulation factor of $0.42 \\pm 0.01$. This was successfully reproduced at the 10% level by the computer simulation package Geant4 after modifications to its implementation of ...
2005-01-01
Absolute differential cross sections for the scattering of kilo-electron-volt O atoms
International Nuclear Information System (INIS)
This paper reports measurements of absolute differential cross sections for the direct scattering of oxygen atoms by He, Ne, Ar, Kr, Xe, H_2, N_2, O_2, CO, CO_2, H_2O, SO_2, NH_3, CH_4, CF_4, and SF_6 targets. The measured cross sections include contributions from all elastic and inelastic processes that result in a fast neutral oxygen atom product. Cross sections are presented for 0.5- and 1.5-keV projectile energies over the laboratory angular range 0.2 degree endash 5 degree. When compared in the center-of-mass reference frame, these cross sections exhibit a high degree of similarity in both amplitude and angular dependence. The cross sections for N_2, CO, CO_2, and H_2O are inverted using a partial-wave analysis to yield empirical interaction potentials, which can then be used to extrapolate the measurements down to lower energies. Using these potentials, cross sections are evaluated at 0.1 keV. copyright 1996 The American Physical Society.
A Remarkable Low-Mass X-ray Binary within 0.1 pc of the Galactic Center
Recent X-ray and radio observations have identified a transient low-mass X-ray binary (LMXB) located only 0.1 pc in projection from the Galactic center, CXOGC J174540.0-290031. In this paper, we report the detailed analysis of X-ray and infrared observations of the transient and its surroundings. Chandra bservations detect the source at a flux of F_X = 2e-12 erg cm^-2 s^-1 (2-8 keV). After accounting for absorption both in the interstellar medium and in material local to the source, the implied luminosity of the source is only L_X = 4e34 erg/s (2-8 keV; D=8 kpc). However, the diffuse X-ray emission near the source also brightened by a factor of 2. The enhanced diffuse X-ray emission lies on top of a known ridge of dust and ionized gas that is visible infrared images. We interpret the X-ray emission as scattered flux from the outburst, and determine that the peak luminosity of CXOGC J174540.0-290031 was >2e36 erg/s. We suggest that the ...
2005-01-01
International Nuclear Information System (INIS)
These experiments were performed on the Isocele separator, on-line with the Orsay synchrocyclotron; thulium isotopes were produced by bombarding natural erbium targets with 150nA beam of 157MeV protons. Two Ge(Li) detectors, with resolution of 2.3 and 2.5keV at 1332keV used for #gamma#-ray measurements; conversion electron spectra were measured using a Si(Li) detector. #gamma# spectra, #gamma#-#gamma# coincidence and conversion electron measurements were sufficient to build the flow energy level schemes of the transitional "1"5"8Er and "1"5"6Er nuclei. On both nuclei several quasi rotational bands have been identified. These results are compared with other even erbium isotopes and with the neighboring N=88 and 90 isotones. Comparisons with predictions issued from some classical models are also performed: "1"5"8Er appears as a deformed nucleus very similar to "1"6"0Er and "1"6"2Er; on the other hand "1"5"6Er seems to be a soft vibrational ...
1976-01-01
Zinc determination in medicinal powders by radionuclide X-ray fluorescence analysis
International Nuclear Information System (INIS)
X-ray fluorescence analysis was used to determine the zinc content of the ''Perilacin'' powder and the ZnO content of the ''Epiderman-pix'' powder. The characteristic Ksub(#alpha#) line of zinc was excited using a "1"4"7Pm/Mo source (10"7 s"-"1) and the molybdenum Ksub(#alpha#) line (17.47 keV). 4 to 5% Zn and 45 to 49% ZnO were determined with a NaI(Tl) scintillation detector. The radiation intensity was found to decrease with particle size. (M.K.).
1977-01-01
Study of penetration depth for V"+ with low energy implanted in peanut seeds
International Nuclear Information System (INIS)
The penetration depth and concentration distribution for vanadium ions with low energy implanted into the dry peanut seeds is determined by scanning electron microscope and X-ray energy dispersion spectrometer. The results show that the depth-concentration distribution is a Gaussian distribution with a long tail and the maximum penetration depth is about 13.6 #mu#m for V"+ with 200 keV in cotyledon of the peanut. The experimental result of the implanted V"+ range in the peanut seeds is compared with the calculating value of the TRIM95
2002-11-01
Studies of Plasma Confinement in GOL-3 Multi-mirror Trap
International Nuclear Information System (INIS)
Recent results of the experiments at GOL-3 facility are presented. Plasma with a density of 1014...1016 cm-3 is confined in a 12-meter-long solenoid, which comprises 55 corrugation cells with mirror ratio Bmax/B min=4.8/3.2 T. The plasma is heated up to 2...4 keV temperature by a high power relativistic electron beam (?1 MeV, ? 330 kA, ?8?s, ?120 kJ) injected through one of the ends. Mechanism of experimentally observed fast ion heating, issued of plasma stability and confinement are discussed.
2006-01-01
Solid-state ozone synthesis by energetic ions
International Nuclear Information System (INIS)
We have synthesized ozone by irradiating thin solid films of oxygen and oxygen-water mixtures with 100 keV protons, motivated by recent reports of condensed O_3 on icy satellites in the outer Solar system. We measured the depth of the Hartley absorption band in the ultraviolet by reflectance spectroscopy and used it to quantify the column density of ozone. We analyzed the results using a three-component (O, O_2 and O_3) model that successfully explains the fluence dependence of ozone production.
1999-08-02
Possibility of internal transport barrier formation and electric field bifurcation in LHD plasma
Energy Technology Data Exchange (ETDEWEB)
Theoretical analysis of the electric field bifurcation is made for the LHD plasma. For given shapes of plasma profiles, a region of bifurcation is obtained in a space of the plasma parameters. In this region of plasma parameters, the electric field domain interface is predicted to appear in the plasma column. The reduction of turbulent transport is expected to occur in the vicinity of the interface, inducing a internal transport barrier. Within this simple model, the plasma with internal barriers is predicted to be realized for the parameters of T{sub e}(0) {approx} 2 keV and n(0) {approx_equal} 10{sup 18} m{sup -3}. (author)
1999-05-01
Photon-induced K-shell X-ray intensity ratio for elements with 74#<=#Z#<=#92
International Nuclear Information System (INIS)
The K-shell X-ray intensity ratios for W, Au, Tl, Pb, Bi, Th and U were measured at a photon incident energy of 121.9 keV from "5"7Co radionuclide. A comparison between the experimental results and the theoretically calculated values shows that the experimental results are, in general, higher than the theoretical values. The measured intensities are regarded to be reported for the first time. (author) 9 refs.; 1 tab.
1989-01-01
Performance estimates of photoneutralized negative-ion beams
Energy Technology Data Exchange (ETDEWEB)
Recent studies have provided data that make it possible to estimate the efficiency and cost of future beamlines using a chemical oxygen-iodine laser as a neutralizer. These studies indicate that a 400-keV neutral deuterium beam of more than 20 A will operate at an efficiency >60%, with the capital cost of the neutralizer at less than $2/W of neutral beam output. Beamlines of lower current and less energy will operate at poorer efficiencies and higher neutralizer costs per watt of neutral beam. These are estimates. As they are very sensitive to changes in the assumptions from which they were derived, they must be used with some caution. Additional studies are expected to provide more reliable estimates.
1984-11-01
Observation of a surface peak in low energy implant depth profiles in silicon
Energy Technology Data Exchange (ETDEWEB)
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
1984-03-01
International Nuclear Information System (INIS)
Energy level schemes are derived from gamma spectroscopy of several medium-mass deformed nuclei by studying the decay or proton and #alpha# nuclear spectroscopic data. Some new isomeric studies are established among which is the 31 y "1"7"8Hf isomeric state for which Isup(#pi#), K was determined to be 16"+, 16. A four quasi-particle configuration was assigned to this state at 2447.5 +- 2.5 KeV. Atomic masses have been calculated from various measurements and, on the basis of mass formulae extrapolated to neighboring mass regions.
Nondestructive analysis for "2"3"2U and decay progeny in animal tissues
International Nuclear Information System (INIS)
Direct determination of "2"3"2U and its decay products in animal tissues appears to be feasible using an intrinsic Ge(Li) diode detector (for energies of 5-100 keV) and a NaI(Tl) anticoincidence-shielded Ge(Li) diode for higher-energy gamma photons. The detection sensitivity for "2"3"2U and "2"2"8Th is 0.03 and 0.01 nCi, respectively, using a 300-min counting time.
1977-05-01
Neutron monitoring on cold fusion experiments
International Nuclear Information System (INIS)
A helium-3 proportional detector was equipped with the experiment of Liaw-type electrolytic cell contained eutectic LiCl-KCl molten salt saturated by LiD electrolytic to collect the informations of the rate and the energy distribution of possible neutron produced during the electrolysis processes. For long time monitoring, the significant reproducible neutron bursts appeared at several runs of cells during electrolytic processing. The neutron counting rate increased about a factor of two above the level of the background measurement. The pulse height signals were verified of neutron energy ranging from thermal up to 350 keV. (author).
1992-10-01
Neutron Resonance Parameters and Covariance Matrix of 239Pu
Energy Technology Data Exchange (ETDEWEB)
In order to obtain the resonance parameters in a single energy range and the corresponding covariance matrix, a reevaluation of 239Pu was performed with the code SAMMY. The most recent experimental data were analyzed or reanalyzed in the energy range thermal to 2.5 keV. The normalization of the fission cross section data was reconsidered by taking into account the most recent measurements of Weston et al. and Wagemans et al. A full resonance parameter covariance matrix was generated. The method used to obtain realistic uncertainties on the average cross section calculated by SAMMY or other processing codes was examined.
2008-08-01
Energy Technology Data Exchange (ETDEWEB)
Q/sub ..beta..-values are determined for 18 nuclei (Zr-, Nb-, Mo-, Tc-, Ru- and Rh-nuclides) with mass numbers 101 less than or equal toA less than or equal to106 and A=109 from measurements of beta decay energies which were carried out at the LOHENGRIN mass separator at the Institut Laue-Langevin in Grenoble (France). The given Q/sub ..beta..-values between 2 and 8 MeV show errors of about 1.5% (with the exception of /sup 103/Zr and /sup 105/Nb resp. and /sup 103/Tc for which larger errors result due to statistical resp. systematic reasons): /sup 101/Zr 5500+-70, /sup 101/Nb 4580+-45, /sup 102/Zr 4670+-40, /sup 102/Nb 7230+-70, /sup 103/Zr 6790+-240, /sup 103/ 5740+-70, /sup 103/Mo 3575+-80, /sup 103/Tc 2585+-70, /sup 104/Nb 8250+-130, /sup 104/Mo 2180+-40, /sup 104/Tc 5520+-100, /sup 105/Nb 6570+-150, /sup 105/Mo 4885+-80, /sup 105/Tc 3750+-60, /sup 106/Mo 3515+-45, /sup 106/Tc 6540+-70, /sup 109/Ru 4150+-80, /sup 109/Rh 2550+-50 (all values in keV). For the ...
1986-10-31
International Nuclear Information System (INIS)
Q_#beta#-values are determined for 18 nuclei (Zr-, Nb-, Mo-, Tc-, Ru- and Rh-nuclides) with mass numbers 101 #<=# A #<=# 106 and A=109 from measurements of beta decay energies which were carried out at the LOHENGRIN mass separator at the Institut Laue-Langevin in Grenoble (France). The given Q_#beta#-values between 2 and 8 MeV show errors of about 1.5% (with the exception of "1"0"3Zr and "1"0"5Nb resp. and "1"0"3Tc for which larger errors result due to statistical resp. systematic reasons): "1"0"1Zr 5500#+-#70, "1"0"1Nb 4580#+-#45, "1"0"2Zr 4670#+-#40, "1"0"2Nb 7230#+-#70, "1"0"3Zr 6790#+-#240, "1"0"3 5740#+-#70, "1"0"3Mo 3575#+-#80, "1"0"3Tc 2585#+-#70, "1"0"4Nb 8250#+-#130, "1"0"4Mo 2180#+-#40, "1"0"4Tc 5520#+-#100, "1"0"5Nb 6570#+-#150, "1"0"5Mo 4885#+-#80, "1"0"5Tc 3750#+-#60, "1"0"6Mo 3515#+-#45, "1"0"6Tc 6540#+-#70, "1"0"9Ru 4150#+-#80, "1"0"9Rh 2550#+-#50 (all values in keV). For the measurement of beta-gamma coincidences a #DELTA#E/E-plastic ...
LUCIFER, a potentially background-free approach to the search for neutrinoless double beta decay
British Library Electronic Table of Contents (United Kingdom)
LUCIFER (Low-background Underground Cryogenic Installation For Elusive Rates) is a new project for the study of neutrinoless Double Beta Decay, based on the technology of scintillating bolometers. These devices promise a very efficient rejection of the alpha background, opening the way to a virtual background-free experiment if candidates with a transition energy higher than 2615 keV are investigated. The baseline candidate for LUCIFER is 82Se. This isotope will be embedded in ZnSe crystals grown with enriched selenium and operated as scintillating bolometers in a low-radioactivity underground dilution refrigerator. In this paper, the LUCIFER concept will be introduced. The sensitivity and the very promising prospects related to this project will be discussed.
2011-01-01
International Nuclear Information System (INIS)
The additional error in measurement of the thickness of Kh18N10T steel for possible changes in composition with an energy of the photons of ionizing radiation of 10-80 keV was evaluated. The desirability of use of a type REIS-I x-ray emitter in measurement of the thickness of steel up to 1 mm is shown. The instrument provides measurement of the thickness of steel in the 0.1-1.0 mm range with a reproducibility of the results with an error not exceeding 0.5-1.0%. The measurement error with corrugations characteristic of bellows does not exceed 5%.
High current implantation of negative copper ions into silica glasses
Energy Technology Data Exchange (ETDEWEB)
High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.
1997-12-01
Experimental study of beam optics and energy recovery for high-energy electron cooling device
International Nuclear Information System (INIS)
The feasibility of a high-energy electron cooling device has been studied through tests on a prototype of the electron device. The apparatus consists of a pulsed ((20-60) keV, 2#mu#s) electron gun, a drift region 1 m long and of a depressed collector for recovering the electron energy. Tests on beam optics and energy recovery have been performed, a high-energy recovery efficiency has been attained. Experimental results are discussed in this paper.
Energy Technology Data Exchange (ETDEWEB)
An electrostatic beam steering mechanism (ESM) has been designed and tested to deflect negative ion beams consisting of multi-beamlets. A steering angle of 10 mrad was obtained within the deviation of less than 1 mrad by biasing two electrodes at 0.5 kV and -0.75 kV for 120 keV H{sup -} ion beam. The current flowing to the positive electrode was no more than 10% of the beam current at a pressure of 2.8x10{sup -5} Torr. (author)
1998-11-01
Delayed neutron energy spectra following fast fission of "2"3"8U
International Nuclear Information System (INIS)
Delayed neutron energy spectra have been measured for six delay-time intervals following the fast fission of "2"3"8U nuclei. The delay-time intervals span the range 0.17 to 10.2 seconds following initial fission while the measured spectra span neutron energies from 10 keV to 4 MeV. The experiment was performed utilizing the UMass/Lowell 5.5 MV Van de Graff accelerator to produce fast neutrons for inducing fission in a "2"3"8U lined fission chamber. The fission fragments were flushed via a helium jet stream to a well-shielded counting room where they were deposited onto a moving tape (magnetic audio tape) and transferred to a beta-neutron time-of-flight spectrometer. By adjusting the tape speed, composite delayed neutron time-of-flight spectra were measured for several different delay-time intervals. These measurements involved beta-neutron coincidences with "6Li-loaded glass scintillators for neutron energies from 10 keV to 450 ...
CMOS/SOI hardening at 100 MRAD (SiO_2)
International Nuclear Information System (INIS)
Hardened CMOS/SOI 29101 microprocessor, elementary cells and transistor shave been irradiated at levels between 10 Mrad(SiO_2) and 1 Grad(SiO_2) ("6"0Co and 10 keV x-rays). SIMOX buried oxide behavior in the range of 100 Mrad(SiO_2) and a channel-stopped MOS/SOI structure avoiding lateral leakage current are presented. These two items indicate the feasibility of a CMOS/SOI technology operating in the hundred Mrad(SiO_2) range.
1990-07-16
Angular scattering in electron capture and loss D/sup -/ beam formation processes
Energy Technology Data Exchange (ETDEWEB)
The development of high energy (> 150 keV) neutral beams for heating and fueling magnetic fusion devices depends on the ability to produce well-collimated negative ion beams. The double capture charge-exchange technique is a known, scalable method. In order to maximize the overall efficiency of the process and to achieve the desired beam characteristics, it is necessary to examine the optical qualities of the beams as well as the total efficiency of beam production. A combined modeling and experimental study of the angular scattering effects in negative ion formation and loss processes has therefore been undertaken.
1980-01-01
An Apparent Hard X-ray Decline of CH Cygni
CH Cygni is a symbiotic star consisting of an M giant and an accreting white dwarf, which is known to be a highly variable X-ray source with a complex, two-component, spectra. Here we report on two Suzaku observations of CH Cyg, taken in 2006 January and May, during which the system was seen to be in a soft X-ray bright, hard X-ray faint state. Based on the extraordinary strength of the 6.4 keV fluorescent Fe K-alpha line, we show that the hard X-rays observed with Suzaku are dominated by scattering.
2006-01-01
Alignment accuracy of focused ion beam implantation
Energy Technology Data Exchange (ETDEWEB)
The theoretical alignment limit for focused ion beam (FIB) implantation was deduced from the calculated resolution for the detection of an alignment mark. The alignment resolution varies with the signal to noise ratio and there is an optimum current which gives the best resolution. The alignment resolution epsilon/sub sigma/ is approximately 0.006 ..mu..m for a 160 keV Si/sup ++/ beam from our FIB implanter. The measured alignment error is approximately 0.06 ..mu..m and the main reason of this discrepancy is vibration. The ultimate limit on the alignment error can be reached through improvements in the implanter system.
1987-06-01
"4"8Ca(d,n)"4"9Sc reaction at 79 MeV
International Nuclear Information System (INIS)
We measured differential cross sections and vector analyzing powers for the "4"8Ca(d,n)"4"9Sc reaction at 79 MeV. An overall energy resolution of about 325 keV was achieved, and data were extracted for states up to 3.4 MeV of excitation. Both distorted-wave Born approximation and Johnson-Soper adiabatic approximation calculations were performed; in general, the Johnson-Soper adiabatic approximation calculations provide a better description of the data, and yield reasonable spectroscopic factors.
Energy Technology Data Exchange (ETDEWEB)
High-resolution neutron capture cross section measurements of 55Mn were recently performed at GELINA by Schillebeeckx et al. (2005) and at ORELA by Guber et al. (2007). The analysis of the experimental data was performed with the computer code SAMMY using the Bayesian approach in the resonance parameters representation of the cross sections. The neutron transmission data taken in 1988 by Harvey et al. (2007) and not analyzed before were added to the SAMMY experimental data base. More than 95% of the s-wave resonances and more than 85% of the p-wave resonances were identified in the energy range up to 125 keV, leading to the neutron strength functions S0 = (3.90 0.78) x 10-4 and S1 = (0.45 0.08) x 10-4. About 25% of the d-wave resonances were identified with a possible strength function of S2 = 1.0 x 10-4. The capture cross section calculated at 0.0253 eV is 13.27 b, and the capture resonance integral is 13.52 0.30 b. In the energy range 15 to 120 ...
2008-05-01
Energy Technology Data Exchange (ETDEWEB)
The use of nitrogen ion implantation to increase the surface hardness of structural steels is well documented. Traditionally this involves the use of high energy nitrogen ion beams (approximately 100 keV), with a relatively low beam current density because high energy beams are necessary to produce the required penetration into the material to achieve a significant depth of hardened material. Hardening needs to occur in a region whose size is comparable with the scale of the deformation associated with the tribocontact. 100 keV nitrogen ions typically penetrate into steels only about 0.1 {mu}m and the range of possible tribological applications is thus restricted by this shallow treatment depth. In plasma nitriding processes the nitrogen ions approach the substrate with much lower energies but the ion currents are sufficiently high to cause considerable substrate heating. In this study an ion beam process has been used which more closely ...
1996-09-01
International Nuclear Information System (INIS)
In this experiment, we measured the detection efficiency of gamma-scanning system of Irradiated Materials Examination Facility (IMEF) in Korea Atomic Energy Research Institute(KAERI) for the spent PWR fuel and activity known sources with high activity. We measured the absolute detection efficiency of gamma scanning system of IMEF to the "1"3"7Cs-source with 10.4 GBq and "6"0Co source with 25.9 GBq High-activity sources as standard sources, and a fuel burned in the KORI -1 reactor of the Kori Nuclear power plant. In analyzing, we used three peeks those were the 661.64 keV peak form "1"3"7 Cs 1173.23 and 1332.51 keV"6"0 Co sources, and 14 peaks of "1"3"4Cs and "1"5"4Eu on the spent fuel gamma spectrum which are in the energy range from 500 to 1,600 keV. We find second order equations for detection efficiency by using our experimental results. The equation show that the detection efficiency of gamma scanning system for 1 MeV ...
2003-10-01
ZZ DECAYREM/C, Decay Spectra Library for EXREM Calculation
International Nuclear Information System (INIS)
Description of problem or function: Format: EXREM III; Nuclides: radioactive decay data on 252 Nuclides: 1H-3, 4Be-7, 6C-11, 6C-14, 7N-13, 8O-15, 9F-18, 11Na-22, 11Na-24, 12Mg-28, 13Al-28, 15P-32, 15P-33, 16S-35, 17Cl-36, 17Cl-38, 18A-37, 18A-39, 19K-40, 19K-42, 19K-43, 20Ca-45, 20Ca-47, 20Ca-49, 21Sc-46, 21Sc-47, 21Sc-49, 24Cr-51, 25Mn-52M, 25Mn-52, 25Mn-54, 26Fe-52, 26Fe-55, 26Fe-59, 27Co-56, 27Co-57, 27Co-58, 27Co-60, 28Ni-56, 28Ni-63, 29Cu-64, 30Zn-65, 30Zn-69M, 30Zn-69, 31Ga-67, 31Ga-68, 32Ge-77, 33As-76, 33As-77, 34Se-75, 35Br-80M, 35Br-80, 35Br-82, 35Br-83, 35Br-84, 36Kr-79, 36Kr-83M, 36Kr-85M, 36Kr-85, 36Kr-87, 36Kr-88, 37Rb-84, 37Rb-86, 37Rb-87, 37Rb-88, 37Rb-89, 37Rb-90M, 37Rb-90, 38Sr-85, 38Sr-87M, 38Sr-89, 38Sr-90, 38Sr-91, 38Sr-92, 38Sr-93, 39Y-87, 39Y-88, 39Y-90, 39Y-91M, 39Y-91, 39Y-92, 39Y-93, 40Zr-93, 41Nb-93M, 40Zr-95, 40Zr-97, 41Nb-95M, 41Nb-95, 41Nb-97M, 41Nb-97, 42Mo-99, 43Tc-99M, 43Tc-99, 44Ru-103, 44Ru-105, 44Ru-106, 45Rh-103M, 45Rh-105M, 45Rh-105, 45Rh-106, ...
{delta}-excitations and the three-nucleon force
Energy Technology Data Exchange (ETDEWEB)
We study the three-nucleon force in chiral effective field theory with explicit {delta}-resonance degrees of freedom. We show that up to next-to-next-to-leading order, the only contribution to the isospin symmetric three-nucleon force involving the spin-3/2 degrees of freedom is given by the two-pion-exchange diagram with an intermediate delta, frequently called the Fujita-Miyazawa force. We also analyze the leading isospin-breaking corrections due to the delta. For that, we give the first quantitative analysis of the delta quartet mass splittings in chiral effective field theory including the leading electromagnetic corrections. The charge-symmetry breaking three-nucleon force due to an intermediate delta excitation is small, of the order of a few keV.
2008-06-15
X-ray exposure in the teaching of science at junior and senior high schools
Energy Technology Data Exchange (ETDEWEB)
A significant amount of X-rays were detected as a leakage from some of the Crooke`s tubes which were used in the teaching of science at junior and senior high schools in Japan. We measured the leaked dose of X-rays from the Crooke`s tubes with ionizing chambers, film badges and TLDs. The maximum leaked dose at 5cm distance from those tubes was estimated 143mSv/h. The effective energy of leaked X-rays was 19.3keV. The maximum dose of students exposed during the teaching of science were estimated 0.15mSv per experiment, which exceeded the value recommended in the ICRP publication 36. (author)
1995-10-01
VLF wave stimulation by pulsed electron beams injected from the space shuttle
International Nuclear Information System (INIS)
Among the investigations conducted on the space shuttle flight STS 3 March 1982 was an experiment in which a 1-keV, 100-mA electron gun was pulsed at 3.25 and 4.87 kHz. The resultant waves were measured with a broadband plasma wave receiver. At the time of flight the experimental setup was unique in that the electron beam was square wave modulated and that the shuttle offered relatively long times for in situ measurements of the ionospheric plasma response to the VLF pulsing sequences. In addition to electromagnetic response at the pulsing frequencies the waves exhibited various spectral harmonics as well as the unexpected occurrence of satellite lines around those harmonics. Both phenomena occurred with a variety of different characteristics for different pulsing sequences.
Energy Technology Data Exchange (ETDEWEB)
A time-of-flight mass spectrometer has been constructed to measure the energy spectra of particles scattered by 10/sup 0/ with primary energies between 200 eV and 15 keV. The energy resolution ..delta..E/E of the system is between 0.1 and 0.4%. Energy spectra of scattered molecules and their dissociation products are shown for 570 eV H/sub 2//sup +/ and 4430 eV N/sub 2//sup +/ as projectiles. Electron capture into unbound states of the neutral molecule, with perhaps some contribution from mutual scattering within the molecule, appears to explain the observed dissociation product energy spectra peak widths.
1984-03-01
International Nuclear Information System (INIS)
A time-of-flight mass spectrometer has been constructed to measure the energy spectra of particles scattered by 10"0 with primary energies between 200 eV and 15 keV. The energy resolution #DELTA#E/E of the system is between 0.1 and 0.4%. Energy spectra of scattered molecules and their dissociation products are shown for 570 eV H_2"+ and 4430 eV N_2"+ as projectiles. Electron capture into unbound states of the neutral molecule, with perhaps some contribution from mutual scattering within the molecule, appears to explain the observed dissociation product energy spectra peak widths. (orig.).
The {sup 234}U neutron capture cross section measurement at the n TOF facility
Energy Technology Data Exchange (ETDEWEB)
The neutron capture cross-section of {sup 234}U has been measured for energies from thermal up to the keV region in the neutron time-of-flight facility n-TOF, based on a spallation source located at CERN. A 4{pi} BaF{sub 2} array composed of 40 crystals, placed at a distance of 184.9 m from the neutron source, was employed as a total absorption calorimeter (TAC) for detection of the prompt {gamma}-ray cascade from capture events in the sample. This text describes the experimental setup, all necessary steps followed during the data analysis procedure. Results are presented in the form of R-matrix resonance parameters from fits with the SAMMY code and compared to the evaluated data of Endf in the relevant energy region, indicating the good performance of the n-TOF facility and the TAC. (authors)
2008-07-01
The search for decaying Dark Matter
We propose an X-ray mission called Xenia to search for decaying superweakly interacting Dark Matter particles (super-WIMP) with a mass in the keV range. The mission and its observation plan are capable of providing a major break through in our understanding of the nature of Dark Matter (DM). It will confirm, or reject, predictions of a number of particle physics models by increasing the sensitivity of the search for decaying DM by about two orders of magnitude through a wide-field imaging X-ray spectrometer in combination with a dedicated observation program. The proposed mission will provide unique limits on the mixing angle and mass of neutral leptons, right handed partners of neutrinos, which are important Dark Matter candidates. The existence of these particles is strongly motivated by observed neutrino flavor oscillations and the problem of baryon asymmetry of the Universe. In super-WIMP models, the details of the formation of the cosmic web are different from ...
2009-01-01
The influence of target backing on ion-beam electron spectra
International Nuclear Information System (INIS)
Several different aspects of the influence of the target backing on in-beam electron spectra following compound nuclear reactions induced by accelerated ions at tandem energies irradiating backed targets are discussed in detail. This discussion is illustrated by a few typical examples, such as "1"2C"5"+ and "3"1P"1"0"+ beams at 4 MeV/u bombarding Sn(+Be), Sn(+Au), Pb(+C) backed targets. Moreover, the relative influence of electron backscattering, electron Doppler shift and Doppler broadening as well as #delta#-electron emission on the low energy electron spectra (E_e#<=#100 keV) obtained under such conditions are investigated in the frame of the available experimental data. (orig.).
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
Energy Technology Data Exchange (ETDEWEB)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
1998-05-01
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
International Nuclear Information System (INIS)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
1998-05-01
The effect of ion implantation of Ar on the aqueous corrosion resistance of Zr-4 alloy
International Nuclear Information System (INIS)
The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).
The emission of the plerion G21.5-0.9 appears more extended in X rays than in radio. This is an unexpected result because it would imply that short-lived X-ray electrons may reach distances even larger than radio electrons. Applying an empirical relationship between dust scattering optical depth and photoelectric column density, the measured column density leads to a large optical depth at 1 keV, of about 1. Therefore we investigate the hypothesis that the detected halo be an effect of dust scattering, re-analyzing an Cal/PV XMM-Newton observation of G21.5-0.9 and critically examining it in terms of a dust scattering model. We also present a spectral analysis of a prominent extended feature in the northern sector of the halo.
2003-01-01
Technique for generating atomic negative ion beams of the group IA elements
Energy Technology Data Exchange (ETDEWEB)
A technique has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb and Cs). The method is based on the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag or other metal powders. The following intensities are typical of those observed from carbonate samples subjected to approx. = 3 keV cesium ion bombardment: Li/sup -/: greater than or equal to 0.5 ..mu..A; Na/sup -/: greater than or equal to 0.5 ..mu..A; K/sup -/: greater than or equal to 0.5 ..mu..A; Rb/sup -/: greater than or equal to 0.5 ..mu..A; Cs/sup -/: greater than or equal to 0.2 ..mu..A.
1989-03-15
British Library Electronic Table of Contents (United Kingdom)
Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
1995-10-09
International Nuclear Information System (INIS)
The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.
Study of the cyclotron feature in MXB 0656-072
We have monitored a Type II outburst of the Be/X-ray binary MXB 0656-072 in a series of pointed RXTE observations during October through December 2003. The source spectrum shows a cyclotron resonance scattering feature at 32.8 +/- 0.5 keV, corresponding to a magnetic field strength of (3.67 +/- 0.06) x 10^12 G and is stable through the outburst and over the pulsar spin phase. The pulsar, with an average pulse period of 160.4 +/- 0.4 s, shows a spin-up of 0.45 s over the duration of the outburst. From optical data, the source distance is estimated to be 3.9 +/- 0.1 kpc and this is used to estimate the X-ray luminosity and a theoretical prediction of the pulsar spin-up during the outburst.
2006-01-01
International Nuclear Information System (INIS)
Studies on the separation of Ag(I) during the recovery of Pu from analytical waste generated during potentiometric determination of Pu using AgO as oxidant, by precipitation of Pu as ammonium plutonium (III) oxalate have shown that most of the Ag(I) is separated during the reduction of Pu to Pu(III) state by ascorbic acid. A decontamination factor of 54 was obtained. Additional a decontamination factor of 5.8 was obtained during the precipitation of Pu as ammonium plutonium (III) oxalate. The Ag content was determined by gamma spectrometry, using "1"1"1Ag as a tracer (T_1_/_2 7.45 d, #gamma# 342.1 keV) and HPGe as detector. The studies indicate that Ag is preferentially separated almost quantitatively during the recovery of plutonium, when acidity adjustment is done with NaOH instead of NH_3. (author)
2007-02-14
Studies of the low-lying levels in /sup 192/Pt and /sup 192/Os
Energy Technology Data Exchange (ETDEWEB)
The energy level schemes of /sup 192/Os and /sup 192/Pt have been established on the basis of ..gamma..-..gamma.. coincidence studies using a dual parameter data collection system. Ge(Li) detectors were employed to study the gamma spectra produced in the E.C. and ..beta../sup -/ decays of /sup 192/Ir to /sup 192/Os and /sup 192/Pt, respectively. Thirteen new transitions and three new levels at 1146.95, 1237.35 and 1913.76 keV are suggested. Relative intensities from singles measurements, branching ratios, ..cap alpha..(K) and log ft values were calculated and multipolarities, spins and parities deduced. Comparisons are made with predictions of the Interacting Boson Model calculated on the basis of an O(6) to SU(3) transition.
1985-02-01
Studies of the low-lying levels in "1"9"2Pt and "1"9"2Os
International Nuclear Information System (INIS)
The energy level schemes of "1"9"2Os and "1"9"2Pt have been established on the basis of #gamma#-#gamma# coincidence studies using a dual parameter data collection system. Ge(Li) detectors were employed to study the gamma spectra produced in the E.C. and #beta#"- decays of "1"9"2Ir to "1"9"2Os and "1"9"2Pt, respectively. Thirteen new transitions and three new levels at 1,146.95, 1,237.35 and 1,913.76 keV are suggested. Relative intensities from singles measurements, branching ratios, #alpha#(K) and log ft values were calculated and multipolarities, spins and parities deduced. Comparisons are made with predictions of the Interacting Boson Model calculated on the basis of an O(6) to SU(3) transition. (orig.).
1985-01-01
Spatial distribution of IGC-30 Ge-detector's efficiency
International Nuclear Information System (INIS)
The dependence of the efficiency of a coaxial IGC-30 Ge detector on the direction of gamma quanta entry, their energy and the distance from the source is examined. A set of point sources QCR-2 (Amersham, UK) has been used which is arranged consecutively in two perpendicular planes passing through the detector axis, at a distance of 0.1 - 1.3 m (pace 0.1) from its geometric centre for 16 different angles in every plane. Dependence curves of the efficiency on the angle of gamma-quanta hits are obtained for energies 60, 81, 122, 356, 662, 834, 1173 and 1332 keV. Changes in efficiency connected with spatial dividing ability are found out. Using the least squares' method the expected spatial distribution of efficiency is examined with a level of authenticity P > 0.9. The possible causes for the efficiency change and its possible effect on the measurements' precision are discussed. (author).
1993-12-02
Simulation study on retention and reflection from tungsten carbide under high fluence of helium ions
Energy Technology Data Exchange (ETDEWEB)
We have studied, by a Monte Carlo simulation code ACAT-DIFFUSE, the fluence-dependence of the amount of retained helium atoms in tungsten carbide at room temperature under helium ion bombardment. The retention behavior may be understood qualitatively in terms of irradiation-dependent diffusion coefficient assumed and range. The emission processes from tungsten carbide under helium ion irradiation derived were compared with each other. We have discussed the retention curves for incident energy of 5 keV at incident angles of 0deg and 80deg and of 500 eV at 0deg. The energy spectra of helium atoms reflected from tungsten carbide for incident energy of 500 eV at 0deg and 80deg were compared with those from graphite and tungsten. (author)
2000-08-01
Resonant neutralization of He ions into excited states at Cu(110) and Ni(110) surfaces
Energy Technology Data Exchange (ETDEWEB)
He ions incident at grazing angles on Cu(110) and Ni(110) surfaces are neutralised into triplet and singlet states, of which the 3p, 3d and 4d upper states are accessible to optical spectroscopy. In the energy range from 500 eV to 15 keV no significant energy dependence of the relative intensities of singlet and triplet lines was observed for scattering on Cu(110). The intensities from Ni(110) are higher and the singlet to triplet intensity ratio of the 3d to 2p transition is about 6% smaller than that from Cu(110). The results can be explained well by assuming resonant charge capture into excited He and intermediate formation of negative He/sup -/ states.
1984-03-01
Resonant neutralization of He ions into excited states at Cu(110) and Ni(110) surfaces
International Nuclear Information System (INIS)
He ions incident at grazing angles on Cu(110) and Ni(110) surfaces are neutralised into triplet and singlet states, of which the 3p, 3d and 4d upper states are accessible to optical spectroscopy. In the energy range from 500 eV to 15 keV no significant energy dependence of the relative intensities of singlet and triplet lines was observed for scattering on Cu(110). The intensities from Ni(110) are higher and the singlet to triplet intensity ratio of the 3d to 2p transition is about 6% smaller than that from Cu(110). The results can be explained well by assuming resonant charge capture into excited He and intermediate formation of negative He"- states. (orig.).
1983-07-01
Recent advance of focused ion beam technology in maskless deposition and patterning
International Nuclear Information System (INIS)
The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).
British Library Electronic Table of Contents (United Kingdom)
Although the outer surface of single-walled carbon nanotubes (atomically thin cylinders of carbon) can be involved in a wide range of chemical reactions, it is generally thought that the interior surface of nanotubes is unreactive. In this study, we show that in the presence of catalytically active atoms of rhenium inserted into nanotubes, the nanotube sidewall can be engaged in chemical reactions from the inside. Aberration-corrected high-resolution transmission electron microscopy operated at 80?keV allows visualization of the formation of nanometre-sized hollow protrusions on the nanotube sidewall at the atomic level in real time at ambient temperature. Our direct observations and theoretical modelling demonstrate that the nanoprotrusions are formed in three stages: (i) metal-assisted d...
2011-01-01
Radiopharmaceuticals labelled with positron emitting radionuclides
International Nuclear Information System (INIS)
A brief survey is presented of the methods of preparation and of the applications of radiopharmaceuticals labelled with short-lived positron radionuclides "1"1C, "1"8F, "1"3N and "1"5O which, thanks to their energy level schemes, short half-life and the 511 keV photon radiation energy are almost ideal tracers in modern nuclear medicine and pharmacology. In conjunction with computerized tomography, they represent one of the most sensitive diagnostic imaging methods, the so-called positron emission tomography. In addition, their incorporation in the molecule of a pharmaceutical does not change the biological and chemical properties of the original molecule unlike those of radiopharmaceuticals labelled with technetium, iodine, etc. (author). 125 refs.
1989-01-01
RHEED, AES and XPS studies of the passive films formed on ion implanted stainless steel
International Nuclear Information System (INIS)
P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
2005-05-26
RHEED, AES and XPS studies of the passive films formed on ion implanted stainless steel
Energy Technology Data Exchange (ETDEWEB)
P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
1981-12-01
Photosensitivity and imaging characteristics of ion-implanted PLZT ceramics
International Nuclear Information System (INIS)
We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.
1985-08-12
Particle emission from low energy proton bombardment of TiH{sub 2} and TiD{sub 2}
Energy Technology Data Exchange (ETDEWEB)
TiH{sub 2} and TiD{sub 2} thick targets were bombarded with 100 to 200 keV protons. Evidence for nuclear reactions was obtained by means of a surface barrier particle detector. Proton irradiation of TiD{sub 2} produced the following observations: {alpha} particle emission identified as (p, {alpha}) reactions from {sup 11}B and {sup 7}Li impurities in the target at ppm concentrations; and {approx}3 MeV proton and {approx}1 MeV triton emission from secondary D-D reactions caused by elastic scattering of the primary proton with a target deuteron. A 3.9 MeV {alpha} particle peak measured by others was not observed. (author)
2002-03-01
Particle and X-ray damage in pn-CCDs
Energy Technology Data Exchange (ETDEWEB)
The fully depleted pn-junction charge coupled device (pn-CCD) has been developed as a detector for X-ray imaging and high-resolution spectroscopy for the X-ray satellite missions XMM and ABRIXAS. If the detector is exposed to a particle radiation environment, the energy resolution is degraded due to charge transfer losses and a dark current increase. In a first experiment, prototype devices were irradiated with 10 MeV protons. After completion of the detector development, the proton irradiation was repeated for a quantitative study of the radiation damage, relevant for the satellite missions. The irradiation test was extended by a 5.5 MeV {alpha}-particle and a 6 keV X-ray exposure of the pn-CCD, including the CAMEX preamplifier chip.
2000-01-11
Partial wave expansion of ion-atom elastic scattering in solids
International Nuclear Information System (INIS)
Elastic scattering cross sections of keV protons in solids (Z=3-82) are calculated using the partial wave expansion technique and the ''muffin-tin'' bound-atom potential. The differential cross sections for small scattering angles of less than 10deg are smaller than those with the Ziegler-Biersack-Littmark potential at all energies and for all solids, although, for larger angles, the two cross sections agree with each other. The mean free paths of the protons in the solids, obtained from the total cross sections, decrease very slowly with decreasing energy. Furthermore, at low energies they approach half the nearest-neighbor distance, which is taken as the radius of the augmented plane wave sphere in the muffin-tin model of crystalline solids. (orig.).
Optical-Model Description of Time-Reversal Violation
A time-reversal-violating spin-correlation coefficient in the total cross section for polarized neutrons incident on a tensor rank-2 polarized target is calculated by assuming a time-reversal-noninvariant, parity-conserving ``five-fold" interaction in the neutron-nucleus optical potential. Results are presented for the system $n + {^{165}{\\rm Ho}}$ for neutron incident energies covering the range 1--20 MeV. From existing experimental bounds, a strength of $2 \\pm 10$ keV is deduced for the real and imaginary parts of the five-fold term, which implies an upper bound of order $10^{-4}$ on the relative $T$-odd strength when compared to the central real optical potential.
1994-01-01
Milling materials using CO{sub 2} clusters; Materialbearbeitung durch Clusterionenbeschuss
Energy Technology Data Exchange (ETDEWEB)
The Sputter coefficient of accelerated CO{sub 2} cluster ions hitting surfaces of various materials is investigated. For copper it varies proportional to the 2nd power of the energy between 155 and 260 keV. The rate of erosion for different target materials varies by two orders of magnitude from tungsten to PMMA. Diamond is eroded fairly quickly, while aluminum is eroded less than corundum (Al{sub 2}O{sub 3}). No simple correlation of the sputter coefficient on the bulk material properties is found. For copper the angular distribution of sputtered material is measured and found to be following roughly a cosine distribution. By using masks different microstructures have been produced in cobalt-samarium magnets, diamond and glass. (orig.)
1993-10-01
Measurement of liquid nitrogen level by radiation
Energy Technology Data Exchange (ETDEWEB)
The measurement of level in the liquid nitrogen vessel has been carried out by the weight conversion method using weigher or by putting directly a stick in the vessel. On a large CE tank, the pressure difference was read by manometer. These methods can not be used when the vessel does not put on the weigher or the pipe for manometer is stopped. We noticed the interaction between radiation ({gamma}-ray) and substance and applied it to determine the liquid nitrogen level. The results proved it the easy method for measurement of the level in the large CE tank. Cesium 137 ({gamma}-ray energy: 662 keV) was used as the radiation source. {gamma}-ray transmission dose was determined by GM survey meter. The liquid nitrogen level could be determined by using the change of the transmission dose with amount of liquid nitrogen. (S.Y.)
1995-07-01
Investigation on corrosion resistance of amorphous films prepared by ion beam mixing
International Nuclear Information System (INIS)
Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.
1991-01-01
Infrared monitoring of the Doublet III beam armor plate
Energy Technology Data Exchange (ETDEWEB)
An 80 keV, 3.6 MW neutral beam injection system has recently been installed on Doublet III, and the installation of a second system is scheduled within several months. Armor plate consisting of /approximately equals/100 graphite tiles (10 cm x 10 cm) coated with TiC has been plated over portions of the inner vacuum wall lying in the line of sight of the ion sources. In order to monitor the condition of the armor plate an infrared camera and a set of optical pyrometers have been installed alongside the beamline and view the armor plate through a CaF/sub 2/ window. The pyrometers measure the temperature of the armor plate associated with the maximum of the intensity distribution of each ion source.
1981-01-01
International Nuclear Information System (INIS)
It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.
2003-11-17
International Nuclear Information System (INIS)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.
2002-01-01
Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
Energy Technology Data Exchange (ETDEWEB)
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
2004-12-15
Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
International Nuclear Information System (INIS)
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
2004-12-15
G-factor of the 21/2/sup +/ isomer in /sup 203/Pb
Energy Technology Data Exchange (ETDEWEB)
The g-factor of the 21/2/sup +/ state at 1921.9 keV in /sup 203/Pb has been measured through the time differential perturbed angular distribution technique in an external magnetic field B=2.028 T. The measured g-factor g=-0.063(2) indicates a predominantly three neutron hole configuration described by the wave function 0.68vertical strokei/sup -1//sub 13/2/f/sup -2//sub 5/2/>+-0.73vertical strokei/sup -1//sub 13/2/f/sup -1//sub 5/2/p/sup -1//sub 3/2/>.
1986-12-01
Fourier analysis of energy transfer data obtained by simulating a 14-MeV #alpha#-particle in water
International Nuclear Information System (INIS)
Data from Monte Carlo transport codes are used to model radiobiological effects. We previously reported the Fourier analysis of ionization data generated by simulating a 500-keV proton traversing water. Here, we extend Fourier analysis to energy transfer data of another radiation type, a 14-MeV #alpha#-particle. A radiobiological model based on this frequency-domain analysis views cell as an information processing system . It lends itself naturally to traditional engineering analyses. One engineering principle-the output response of a linear system to random signal-is applied here to explain the fact that there is measurable difference in the magnitude of the biological effectiveness when a given biological system is irradiated with two different radiation types of the same Linear Energy Transfer (LET).
2010-01-15
Focused ion beam preparation of inclined planes in semiconductor materials
International Nuclear Information System (INIS)
Focused ion beam (FIB) micromachining has been used to produce inclined planes on semiconductor surfaces. A 10 keV FIB system, utilising a Ga"+ liquid metal ion source (LMIS), was employed. The ramped surfaces were prepared by digitally deflecting the ion beam in a serpentine fashion over a rectangular area and incrementing the time the beam spends at a pixel, dwell time, line by line. For the conditions used, control in micromachining the inclination of the ramps to the starting horizontal surface is of the order of 1 arc s per scan of the FIB over the area of interest. The possibility of using such surfaces prepared by FIB, along with vacuum growth techniques such as molecular beam epitaxy (MBE), for application to strain relief structures and lateral device production is discussed. (author).
Electronics Personal Dosemeter (EPD-N) Test and Evaluation Report
Energy Technology Data Exchange (ETDEWEB)
Three electronic personal dosimeters (EPD-N) manufactured by Siemens, serial numbers 0635, 0658, and 0683, were tested at the Radiation Calibration Laboratory for an evaluation of their response to neutron, gamma and x-ray radiation. Designed to provide real-time neutron and photon dosimetry, the EPD-N is capable of estimating and displaying neutron and gamma dose components separately for a range of energies from 50 keV to 7 MeV for photon and 0.025 eV to > 10 MeV for neutron. All tests were conducted using the factory calibrations. A technical representative of the manufacturer indicated that site-specific calibrations are required as factory settings are calibrated for the lowest neutron energy limit of 0.025 eV. This raises concerns about the reliability of these devices in measuring neutrons when calibrations are made for a specific site radiological characterization then used at another site.
2003-04-08
Electronic structure, Compton profiles and optical properties of TaC and TaN
International Nuclear Information System (INIS)
Isotropic Compton profiles of TaC and TaN have been measured for the first time, at an intermediate resolution, using 662 keV #gamma#-radiation. Energy bands, density of states and Fermi surface topology of TaC and TaN have been computed using linear combination of atomic orbitals with density functional theory and full potential linearised augmented plane wave method. Both band structure calculations predict the metallic character of TaC and TaN. The electron momentum densities calculated using various approaches of density functional theory are compared with the present measurements. On the basis of Mulliken's population, it is also seen that TaC has more covalent bonding than TaN. The optical properties computed using full potential linearised augmented plane wave method are explained in terms of intraband transitions.
2010-11-01
Energy Technology Data Exchange (ETDEWEB)
The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10[sup -15] cm[sup 2] in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, the emission factors for negative-ion beam are found to be larger by 1 than those for positive-ion beams. (author).
1994-01-01
International Nuclear Information System (INIS)
The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10"-"1"5 cm"2 in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, the emission factors for negative-ion beam are found to be larger by 1 than those for positive-ion beams. (author).
1994-01-01
Electrical properties of focused-ion-beam boron-implanted silicon
International Nuclear Information System (INIS)
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).
Effects on focused ion beam irradiation on MOS transistors
Energy Technology Data Exchange (ETDEWEB)
The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 {mu}m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga{sup +} focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.
1997-04-01
Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon
International Nuclear Information System (INIS)
N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code
2001-12-01
Effect of pressure on the valence state of Yb in YbPd_2Si_2
International Nuclear Information System (INIS)
The intermediate valent behaviour of YbPd_2Si_2 has been studied under pressure in the temperature range from 1.2 K to 90 K by using the 84 keV Moessbauer transition in "1"7"0Yb. At 54 kbar and 4.2 K we obtain an increase of the electric field gradient (EFG) by a factor of #approx =# 3. In addition, the EFG varies strongly with temperature, in contrast to the behaviour at ambient pressure. At 1.2 K a change of the hyperfine pattern is observed indicating a magnetic character of the Yb ion. These results provide evidence of a pressure induced change of the valence state close to 3+. (orig.).
Monte Carlo calculations using the codes PENELOPE and GEANT4 have been performed to characterize the dosimetric properties of monoenergetic photon point sources in water. The dose rate in water has been calculated for energies of interest in brachytherapy, ranging between 10 keV and 2 MeV. A comparison of the results obtained using the two codes with the available data calculated with other Monte Carlo codes is carried out. A chi2-like statistical test is proposed for these comparisons. PENELOPE and GEANT4 show a reasonable agreement for all energies analyzed and distances to the source larger than 1 cm. Significant differences are found at distances from the source up to 1 cm. A similar situation occurs between PENELOPE and EGS4.
2006-01-01
Determination of Proper Peaking Time for Ultra Lege detector at Medium Energies
International Nuclear Information System (INIS)
Reducing count losses and pile-up pulse effects in quantitative and qualitative analysis is necessary for accuracy of analysis. Therefore, the optimum peaking time for particular detector systems is important. For this purpose, pure Se and Zn elements were excited by 59.5 keV ?-rays from a 50 mCi 241Am annular radioactive source in this study. The characteristic x-rays emitted from pure Se and Zn elements were detected by using an ultra low energy Ge (Ultra-LEGe) detector connecting Tennelec TC 244 spectroscopy amplifier at different peaking time modes. Overall pulse widths were determined by HM 203-7 oscilloscope connecting amplifier. The proper peaking time for ultra low energy germanium detector (Ultra-LEGe) is determined about 4 ?s.
2008-08-25
Design and fabrication of large ultra-thin PIN detector with membrane stress deviation
Energy Technology Data Exchange (ETDEWEB)
In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.
2010-09-15
Depth dependence of {l_brace}311{r_brace} defect dissolution
Energy Technology Data Exchange (ETDEWEB)
A deep band of {l_brace}311{r_brace} defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the {l_brace}311{r_brace}-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The {l_brace}311{r_brace} defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the {l_brace}311{r_brace}-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.
2001-09-03
Depth dependence of #left brace#311#right brace# defect dissolution
International Nuclear Information System (INIS)
A deep band of #left brace#311#right brace# defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the #left brace#311#right brace#-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The #left brace#311#right brace# defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the #left brace#311#right brace#-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.
2001-09-03
Comparative evolution of various CCD image sensors hardening techniques with ionizing radiation
International Nuclear Information System (INIS)
This paper reviews various techniques to harden Charged Coupled Device (CCD) sensors and the results after irradiation of three Thomson n buried channel CCDs having a different degree of hardening. It describes the major irradiation effects on CCD performances and it makes a comparison of the results between the different hardening levels. It shows good results on dark voltage after ionizing radiation for TH 7863M device hardened both by design and by operating conditions (MPP mode) with respect to the standard device TH 7863A. The irradiations were performed with "6"0Co or X-ray (10 keV) sources on devices in operating mode. (author). 3 refs., 8 figs.
International Nuclear Information System (INIS)
Measurements of absolute differential cross sections for H"+-H_2 direct, single-, and double-charge-transfer scattering at 0.5, 1.5, and 5.0 keV are reported at laboratory scattering angles less than 1 degree with an angular resolution of approximately 0.02 degree. The cross sections exhibit deep interference oscillations in single-charge-transfer scattering, but no such oscillations are present in direct and double-charge-transfer scattering. Theoretical cross sections derived using the diatoms-in-molecules method to describe the molecular states in a semiclassical molecular-orbital three-state close-coupling model within a semiclassical framework agree satisfactorily with the experimental results.
Characterization of focused-ion-beam-induced damage in n-type silicon using Schottky contact
International Nuclear Information System (INIS)
The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.
2006-04-10
Channeling studies of radiation damage in metal-silicides
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.
1978-01-01
Channeling studies of radiation damage in metal-silicides
International Nuclear Information System (INIS)
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.
Broad-band hard X-ray reflectors
DEFF Research Database (Denmark)
Interest in optics for hard X-ray broad-band application is growing. In this paper, we compare the hard X-ray (20-100 keV) reflectivity obtained with an energy-dispersive reflectometer, of a standard commercial gold thin-film with that of a 600 bilayer W/Si X-ray supermirror. The reflectivity of the multilayer is found to agree extraordinarily well with theory (assuming an interface roughness of 4.5 Angstrom), while the agreement for the gold film is less, The overall performance of the supermirror is superior to that of gold, extending the band of reflection at least a factor of 2.8 beyond that of the gold, Various other design options are discussed, and we conclude that continued interest in the X-ray supermirror for broad-band hard X-ray applications is warranted.
1997-01-01
Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions
Energy Technology Data Exchange (ETDEWEB)
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).
1997-12-01
Boron transient enhanced diffusion in heavily phosphorus doped silicon
International Nuclear Information System (INIS)
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
1996-12-02
International Nuclear Information System (INIS)
A 20-MeV proton accelerator is developed by Proton Engineering Frontier Project (PEFP) at Korea Atomic Energy Research Institute (KAERI). The 20MeV accelerator consists of 50keV proton injector, 3MeV RFQ (Radio frequency Quadrupole), 20MeV DTL (Drift Tube Linac) and 20MeV beam line. The beam profile was measured at the end of the 20MeV beam line with wire scanner. Moreover the beam emittance was calculated from the quad scan method using beam line quadrupole magnets. In this paper, the beam profile measurement results are presented and the emittance measurement from the quad scan method is discussed
2010-10-01
Atomic scale simulations of arsenic ion implantation and annealing in silicon
International Nuclear Information System (INIS)
We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.
2004-12-15
Atomic processes in high temperature plasmas
International Nuclear Information System (INIS)
Much theoretical and experimental efforts have been expended in recent years to study those atomic processes which are specially relevant to understanding high temperature laboratory plasmas. For magnetically confined fusion plasmas, the temperature range of interest spans from the hundreds of eV at plasma edges to 10 keV at the center of the plasma, where most of the impurity ions are nearly fully ionized. These highly stripped ions interact strongly with electrons in the plasma, leading to further excitation and ionization of the ions, as well as electron capture. Radiations are emitted during these processes, which easily escape to plasma container walls, thus cooling the plasma. One of the dominant modes of radiation emission has been identified with dielectronic recombination. This paper reviews this work.
1990-01-01
Ar/sup +/ ion beam induced silicide formation mechanism at the Pf-Si interface
Energy Technology Data Exchange (ETDEWEB)
Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.
1989-01-01
International Nuclear Information System (INIS)
Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).
International Nuclear Information System (INIS)
This paper reports measurements of absolute differential cross sections for electron capture and loss for fast hydrogen atoms incident on H_2, N_2, O_2, Ar, and He. Cross sections have been determined in the 2.0- to 5.0-keV energy range over the laboratory angular range 0.02 degree--2 degree, with an angular resolution of 0.02 degree. The high angular resolution allows us to observe structure at small angles in some of the cross sections. Comparison of the present results with those of other authors generally shows very good agreement.
A study of methyl formate in astrochemical environments
Several complex organic molecules are routinely detected in high abundances towards hot cores and hot corinos. For many of them, their paths of formation in space are uncertain, as gas phase reactions alone seem to be insufficient. In this paper, we investigate a possible solid-phase route of formation for methyl formate (HCOOCH3). We use a chemical model updated with recent results from an experiment where simulated grain surfaces were irradiated with 200 keV protons at 16 K, to simulate the effects of cosmic ray irradiation on grain surfaces. We find that this model may be sufficient to reproduce the observed methyl formate in dark clouds, but not that found in hot cores and corinos.
2011-01-01
A principle of charged particle trapping by RF electromagnetic field in the spherical cavity
Energy Technology Data Exchange (ETDEWEB)
A new principle of particle trapping in the simple spherical cavity using both electric and magnetic components of radiofrequency electromagnetic field is proposed. The electric component of H {sub 12} oscillating mode drives the fast particle oscillations, while the magnetic component synchronously bends the trajectories to the cavity center. A specially developed theory of particle stability predicts dense and energetic electron cluster in the trap. Numerical simulations of particle dynamics in the complete electromagnetic field taking into account both space charge and particle-induced magnetic field are in good agreement with the analytic results, giving a density of 2.6*10{sup 1} electrons/cm{sup 3} and an average kinetic energy of around 30 keV at an operating frequency of 3 GHz. Being used at lower frequency, spherical cavity can trap protons and heavier ions too, but with lower density and kinetic energy.
2005-11-21
Triple ion-beam studies of radiation damage in 9Cr2WVTa ferritic/martensitic steel
Energy Technology Data Exchange (ETDEWEB)
To simulate radiation damage under a future Spallation Neutron Source (SNS) environment, irradiation experiments were conducted on a candidate 9Cr-2WVTa ferritic/martensitic steel using the Triple Ion Facility (TIF) at ORNL. Irradiation was conducted in single, dual, and triple ion beam modes using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} at 80, 200, and 350{degrees}C. These irradiations produced various defects comprising black dots, dislocation loops, line dislocations, and gas bubbles, which led to hardening. The largest increase in hardness, over 63 %, was observed after 50 dpa for triple beam irradiation conditions, revealing that both He and H are augmenting the hardening. Hardness increased less than 30 % after 30 dpa at 200{degrees}C by triple beams, compatible with neutron irradiation data from previous work which showed about a 30 % increase in yield strength after 27.2 dpa at 365{degrees}C. However, the very large ...
1997-11-01
Energy Technology Data Exchange (ETDEWEB)
Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. Variations in microstructure and hardness of irradiated specimens were studied using transmission electron microscopy (TEM) and a ...
1997-09-01
Time-of-flight secondary ion mass spectrometry of fatty acids in rat retina
Energy Technology Data Exchange (ETDEWEB)
The retina consists of many kinds of central nervous cells, and some cells contain fatty acids such as palmitic acid, stearic acid and oleic acid. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) has a possibility to detect kinds and quantity of materials in relation to the cell or tissue. We applied TOF-SIMS to detect the palmitic acid, stearic acid and oleic acid in the visual cell of the rat retina. We used 4- and 18-month-old normal Wistar Kyoto rats. After pentobarbital anesthesia, the eyes were enucleated, and immediately put into liquid nitrogen without any fixation and then cut into semithin sections (10 {mu}m) with a cryo-ultramicrotome, and laid it on a silicon wafer plate and air-dried. Ion images were detected with TOF-SIMS. Positive ion images were examined with a Ga{sup +} source at an acceleration voltage of 15 keV. The secondary ion acceleration voltage was 4.5 keV. In the 4-month-old rat, palmitic and stearic acid were ...
2003-01-15
Energy Technology Data Exchange (ETDEWEB)
Neutron capture cross sections of actinides are of great relevance for the Transmutation of Nuclear Waste in Accelerator Driven Systems (ADS) and Generation-IV reactors. The neutron capture cross sections of {sup 237}Np and {sup 240}Pu in the range of 1 eV to 2 keV were measured at the n-TOF facility with a Total Absorption Calorimeter. The data have been analyzed with the SAMMY code. The corresponding covariance matrices have been generated. The final cross sections are presented and compared to the previously existing ones.The n-TOF {sup 237}Np {sigma}(n,{gamma}) is in agreement with the evaluated data files below 300 eV and its is lower by 10 to 15% up to 2 keV. This discrepancy with the evaluated data files is also observed in the capture cross section derived from the transmission measurements of Gressier et al. In the case of the {sup 240}Pu {sigma}(n,{gamma}), the n-TOF {sigma}(n,{gamma}) agrees within uncertainties with JENDL-3.3 and ...
2008-07-01
Surface excitation correction of the inelastic mean free path in selected conducting polymers
International Nuclear Information System (INIS)
In earlier works, the inelastic mean free path (IMFP) of electrons was determined by elastic peak electron spectroscopy (EPES) using Ni and Ag reference standard samples, but fully neglecting surface excitation. Surface excitation that is characterized by the surface excitation parameter (SEP), and may affect considerably the elastic peak for the sample and the reference material. The SEP parameters of selected conducting polymers (polythiophenes, polyaniline and polyethylene) were determined by EPES using Si and Ge reference samples. Experiments were made with a hemispherical analyzer of energy resolution 100-200 meV in the E = 0.2-2.0 keV energy range. The composition of the sample surfaces was determined by in situ XPS, their surface roughness by AFM. The experimental SEP parameter data of eight polymer samples were determined by our new procedure, using the formulae of Chen and Werner et al. in the E = 0.2-2.0 keV energy range. The trial ...
2006-05-15
International Nuclear Information System (INIS)
Track analysis of medium energy #alpha# particle trajectories recorded in fine grain nuclear emulsion submitted to specific intensifying treatments led to the observation of strong ionizing events (SIE) sticking out of the primary's track core. Preliminary determinations showed that the number of SIEs increases with the primary's energy, and that their production is of more than one order of magnitude higher than the number of Rutherford recoils. The presence of SIEs on monoenergetic #alpha# tracks also has a significant influence on the measured range distribution, which, expressed in terms of energy loss, results in a mean contribution to the total energy loss of far reaching (SIEs (radial spread >= 0.458 #mu#m) of proportional 25 keV per 13.6 MeV #alpha# particle, instead of 0.75 keV in the case where only the Rutherford interactions are taken into account. Measurements carried out in detectors enriched with gelatin indicate an increase ...
International Nuclear Information System (INIS)
The neutron-capture cross sections of "1"6"8Yb, "1"8"0W, "1"8"4Os, "1"9"0Pt, and "1"9"6Hg have been measured by means of the activation technique. The samples were irradiated in a quasistellar neutron spectrum of kT=25 keV, which was produced at the Karlsruhe 3.7-MV Van de Graaff accelerator via the "7Li(p,n)"7Be reaction. Systematic uncertainties were investigated in repeated activations with different samples and by variation of the experimental parameters, that is, irradiation times, neutron fluxes, and #gamma#-ray counting conditions. The measured data were converted into Maxwellian-averaged cross sections at kT=30 keV, yielding 1214#+-#61, 624#+-#54, 590#+-#43, 511#+-#46, and 201#+-#11 mb for "1"6"8Yb, "1"8"0W, "1"8"4Os, "1"9"0Pt, and "1"9"6Hg, respectively. The present results either represent first experimental data ("1"6"8Yb, "1"8"4Os, and "1"9"6Hg) or could be determined with significantly reduced uncertainties ("1"8"0W and "1"9"0Pt). ...
2010-09-01
Energy Technology Data Exchange (ETDEWEB)
A large negative ion source for JT-60U produces high current ion beam from a wide extraction area of 45 cm x 110 cm. On the other hand, a cross-sectional area of the negative ion based neutral beam (NNB) injection port on JT-60U is narrow, about 50 cm x 60 cm. In order to inject the neutral beam at a high geometric efficiency, i.e. to suppress beam loss in the beamline, it is necessary to steer the beam for both compensation of undesirable beam deflection in extractor and focusing of the beam. For the JT-60U, two methods are provided for the required beam steering. Among them the results of beam steering experiment by aperture displacement and the design study are summarized in the present report. The experiment was carried out with 400 keV negative ion source, which has the three stage accelerator of similar structure as the JT-60U ion source, at Negative Ion Acceleration Test Stand (NIAS). High energy negative ion beams of the same perveance as that of 500 ...
2000-03-01
Energy Technology Data Exchange (ETDEWEB)
Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis negative secondary ions were monitored ...
1983-12-15
Pulse power considerations for the generation of 45 #mu#s, 200 keV electron beams for CO_2 lasers
International Nuclear Information System (INIS)
A two module electron beam source operating over a wide range of output parameters has been designed and fabricated to be used in conjunction with a pair of electron beam sustained CO_2 lasers. Each module comprised a grid-controlled thermionic electron beam gun including a compact grid pulser for control of the electron beam, a 250 kV thyratron switched modulator for acceleration of the electron beam, a 1 kHz filament heater and a complex computerized control system. The system was designed to reliably produce 45 #mu#s wide electron pulses of 150-200 keV energy, operate at repetition rates of 1-10 pps and current densities of 5-20 mA/cm"2. Additional parameters are listed. The high voltage cathode assembly employs 132 thoriated tungsten filaments distributed over the area of the 250 cm x 10 cm output window. The cathode assembly including the control grids is supported by two high voltage ceramic bushings in a stainless steel vacuum chamber. For acceleration of ...
1989-01-19
Pitting and intergranular corrosion resistances of nitrogen ion implanted type 304 stainless steel
International Nuclear Information System (INIS)
Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, insignificant IGC attack was noticed. The IGC resistance increased with increase in the dose for all the specimens aged at 973 K, and the reduction in the electrochemical ...
1998-05-24
Monte Carlo simulation and scatter correction of the GE Advance PET scanner with SimSET and Geant4
Energy Technology Data Exchange (ETDEWEB)
For Monte Carlo simulations to be used as an alternative solution to perform scatter correction, accurate modelling of the scanner as well as speed is paramount. General-purpose Monte Carlo packages (Geant4, EGS, MCNP) allow a detailed description of the scanner but are not efficient at simulating voxel-based geometries (patient images). On the other hand, dedicated codes (SimSET, PETSIM) will perform well for voxel-based objects but will be poor in their capacity of simulating complex geometries such as a PET scanner. The approach adopted in this work was to couple a dedicated code (SimSET) with a general-purpose package (Geant4) to have the efficiency of the former and the capabilities of the latter. The combined SimSET+Geant4 code (SimG4) was assessed on the GE Advance PET scanner and compared to the use of SimSET only. A better description of the resolution and sensitivity of the scanner and of the scatter fraction was obtained with SimG4. The accuracy of scatter correction ...
2005-10-21
Molecular dynamics studies of silicon ion implantation
Energy Technology Data Exchange (ETDEWEB)
Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the ...
1994-12-31
Microfabrication processes for high-T sub c superconducting films
Energy Technology Data Exchange (ETDEWEB)
Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-{Tc} superconducting lines as narrow as 0.8 {mu}m have been fabricated from epitaxial YBa{sub 2}Cu{sub 3}O{sub 7 {minus} {ital y}} films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 {mu}m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 {times} 10{sup 4} A/cm{sup 2} at 77.3 K. Maskless etching was carried out using 130-keV au{sup +} focused ion-beam (FIB) with a 0.1-{mu}m-diameter beam. A 50-nm-thick film was patterned into 0.3-{mu}m-wide lines at a dose of 5 {times} {sup 16} ions/cm{sup 2}. In comparison with Ar IBE, Cl{sub 2} reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si{sup + +} FIB also indicated the possibility to produce submicrometer patterns by ...
1989-12-01
Measurement of relative L X-ray intensity ratio following radioactive decay and photoionization
Energy Technology Data Exchange (ETDEWEB)
The measurements of the L X-ray intensity ratio I(L{alpha})/I(L{beta}), I(L{alpha})/I(L{gamma}), I(L{alpha})/I(L{iota}), I(L{beta})/I(L{gamma}) and I(L{iota})/I(L{gamma}) for elements Dy, Ho, Yb, W, Hg, Tl and Pb were experimentally determined both by photon excitation, in which 59.5 keV {gamma}-rays from a filtered radioisotope {sup 241}Am was used, and by the radioactive decay of {sup 160}Tb, {sup 160}Er, {sup 173}Lu, {sup 182}Re, {sup 201}Tl, {sup 203}Pb and {sup 207}Bi. L X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the calculated theoretical values. Theoretical values of the I(L{alpha}/L{beta}), I(L{alpha}/L{gamma}), I(L{alpha}/L{iota}), I(L{beta}/L{gamma}) and I(L{iota}/L{gamma}) intensity ratios were calculated using theoretically tabulated values of subshell photoionization cross-section, fluorescence yield, fractional X-ray emission rates, ...
2008-05-22
Long pulse production of high current D"- ion beams in the JT-60 negative ion source
International Nuclear Information System (INIS)
The first long pulse production of high power D"- ion beams has been demonstrated in the JT-60 U negative ion sources, each of which was designed to produce 22 A, 500 keV D"- ion beams. Voltage holding capability and the grid power loading were examined for long pulse production of high power D"- ion beams. From the correlation between voltage holding and the light intensity of cathodoluminescence from the Fiber Reinforced Plastic insulators, the acceleration voltage for stable voltage holding capability was found to be less than 320-340 kV where the light was sufficiently suppressed. By tuning the extraction voltage, the grid power loadings in the ion sources were decreased to the allowable levels for long pulse injection without a significant reduction of the beam power. After tuning the acceleration and extraction voltages, D"- ion beams of 12.5 and 9.8 A were produced at 340 keV with cesium seeding at a rate of #approx#14 #mu#g/s into the ...
2008-02-01
Energy Technology Data Exchange (ETDEWEB)
'Improvement in understanding of the deposition of ambient dust particles on ECAM (Environmental Continuous Air Monitor) filters, reduction of the alpha-particle interference of radon progeny and other radioactive aerosols in different particle size ranges on filters, and development of ECAM''s with increased sensitivity under dusty outdoor conditions. As of May 1, 1998 (1/2 year into the project) the research-prototype 30-cm pulsed ionization chamber (PIC) is assembled and operational with an alpha particle energy resolution of better than 45 keV for 5-MeV alpha particles. Measurements of spectral resolution for alpha particles from radon decay products have been made as a function of filter type and dust loading conditions. So far, a study of ten filter types has found that the best combination of resolution and throughput is obtained with 3.0 \\265m Millipore fluoropore and 1.0 \\265m Corning FNMB filters. Experiments with gypsum and ...
1998-06-01
Investigation by XRF and XRD of Zn and Fe in Fe{sub x} Zn{sub 1-x} thin films
Energy Technology Data Exchange (ETDEWEB)
Fe{sub x}Zn{sub 1-x} alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K{beta}/K{alpha} x-ray intensity ratios of Zn and Fe in Fe{sub x}Zn{sub 1-x} thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi {sup 241}Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in Fe{sub x}Zn{sub 1-x} thin films for different values of x. The reason for this ...
2008-12-15
Investigation by XRF and XRD of Zn and Fe in Fex Zn1-x thin films
International Nuclear Information System (INIS)
FexZn1-x alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K?/K? x-ray intensity ratios of Zn and Fe in FexZn1-x thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi 241Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in FexZn1-x thin films for different values of x. The reason for this change may be that the electronegativity of iron is ...
2008-12-01
Defect engineering via ion implantation to control B diffusion in Si
International Nuclear Information System (INIS)
The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological process to focus on the ...
2009-03-15
Comparison of enhanced device response and predicted x-ray dose enhancement effects on MOS oxides
Energy Technology Data Exchange (ETDEWEB)
The response of MOS capacitors to low- and medium-energy x-ray irradiation is investigated as a function of gate material (TaSi or Al), oxide thickness, and electric field. Measured device response is compared with predictions based on discrete ordinates and Monte Carlo code simulations of dose enhancement effects, coupled with recent estimates of electron-hole recombination in MOS oxides. In comparisons of 10-keV x-ray and Co-60 irradiations of Al-gate MOS capacitors at an oxide electric field of 1 MV/cm, it is found that predictions and experiments agree to within better than 20 percent for oxide thicknesses ranging from 35 to 1060 nm. For capacitors having TaSi/Al gates, predictions and experiments agree to within better than 30 percent at 1 MV/cm, with the largest differences occurring for 35-nm gate oxides. At other electric fields, the disagreement between experiment and prediction increases significantly for both Al- and TaSi/Al-gate capacitors, and can be ...
1988-12-01
Comparison of enhanced device response and predicted x-ray dose enhancement effects on MOS oxides
International Nuclear Information System (INIS)
The response of MOS capacitors to low- and medium-energy x-ray irradiation is investigated as a function of gate material (TaSi or Al), oxide thickness, and electric field. Measured device response is compared with predictions based on discrete ordinates and Monte Carlo code simulations of dose enhancement effects, coupled with recent estimates of electron-hole recombination in MOS oxides. In comparisons of 10-keV x-ray and Co-60 irradiations of Al-gate MOS capacitors at an oxide electric field of 1 MV/cm, it is found that predictions and experiments agree to within better than 20 percent for oxide thicknesses ranging from 35 to 1060 nm. For capacitors having TaSi/Al gates, predictions and experiments agree to within better than 30 percent at 1 MV/cm, with the largest differences occurring for 35-nm gate oxides. At other electric fields, the disagreement between experiment and prediction increases significantly for both Al- and TaSi/Al-gate capacitors, and can be ...
1988-07-12
Anode length optimization in a modified plasma focus device for optimal x-ray yields
International Nuclear Information System (INIS)
The effect of anode length and operating gas pressure on the x-ray emission from a nitrogen-filling modified plasma focus device has been investigated. The time-resolved investigation of x ray was carried out by using a five-channel photodiode x-ray spectrometer. The maximum x-ray yield is seen to increase with the increase in the anode length from 110 to 125 mm. Further increase in the anode length to 130 mm causes the x-ray yields to decrease. The highest x-ray yield of 4.5 J into 4#pi# sr was found for 125 mm anode length, which is 0.2% of the input energy. The average x-ray photon energy was estimated by using half-value thickness method and found to be 8.4 keV. The electron temperature of the plasma was estimated to be around 3 keV by x-ray intensity ratio method. The space-resolved x-ray-emitting zones for all the anodes were captured by a pinhole-based x-ray imaging camera and the images were scanned for different gray levels by using a ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
In this experiment, we measured the detection efficiency of gamma-scanning system of Irradiated Materials Examination Facility (IMEF) in Korea Atomic Energy Research Institute(KAERI) for the spent PWR fuel and activity known sources with high activity. We measured the absolute detection efficiency of gamma scanning system of IMEF to the {sup 137}Cs-source with 10.4 GBq and {sup 60}Co source with 25.9 GBq High-activity sources as standard sources, and a fuel burned in the KORI -1 reactor of the Kori Nuclear power plant. In analyzing, we used three peeks those were the 661.64 keV peak form {sup 137} Cs 1173.23 and 1332.51 keV{sup 60} Co sources, and 14 peaks of {sup 134}Cs and {sup 154}Eu on the spent fuel gamma spectrum which are in the energy range from 500 to 1,600 keV. We find second order equations for detection efficiency by using our experimental results. The equation show that the detection efficiency of gamma scanning system for 1 MeV ...
2003-10-01
International Nuclear Information System (INIS)
The development of a flat response small size, real time neutron dosimeter and ratemeter for the energy range of about 1 eV to 14 MeV is presented. This dosimeter is adequate for measuring neutron dose equivalents of 3 mRem up to 100 Rem and dose rates of 300 mRem/h to 50 Rem/h or more. The dosimeter consists of four Si surface barrier detectors. _1_0B radiators are placed in front of three of the detectors and a polyethylene radiator is placed in front of the fourth one. The _1_0B pellets are used for dose equivalent measurements in the energy range 1 eV to proportional1 MeV. The polyethylene radiator, made in two parts having thicknesses of 10 and 100 mg/cm_2 in an area ratio of 8 to 1, flattens the response to +-40% in the energy range 1-14 MeV. The signal-to-background ratio for different Si surface barrier detectors and for _1_0B polyethylene radiators was investigated. This dosimeter can give a rough estimation of the neutron spectrum by separating the total dose equivalent into ...
1983-06-01
/sup 242/Am/sup m/ fission cross section
Energy Technology Data Exchange (ETDEWEB)
The neutron-induced fission cross section of /sup 242/Am/sup m/ has been measured over the energy region from 10/sup -3/ eV to approx.20 MeV in a series of experiments utilizing a linac-produced ''white'' neutron source and a monoenergetic source of 14.1 MeV neutrons. The cross section was measured relative to that of /sup 235/U in the thermal (0.001 to approx.3 eV) and high energy (1 keV to approx.20 MeV) regions and normalized to the ENDF/B-V /sup 235/U(n,f) evaluated cross section. In the resonance energy region (0.5 eV to 10 keV) the neutron flux was measured using thin lithium glass scintillators and the relative cross section thus obtained was normalized to the thermal energy measurement. This procedure allowed a consistency check between the thermal and high energy data. The cross section data have a statistical accuracy of approx.0.5% at thermal energies and in the 1-MeV energy region, and a ...
1984-06-01
XPS study of passive films formed on molybdenum-implanted austenitic stainless steels
Energy Technology Data Exchange (ETDEWEB)
Austenitic stainless steels have been implanted with molybdenum ions (Mo[sup +], 100 keV, 2.5 x 10[sup 16] atoms cm[sup -2]). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of [approx] 1000 A with a maximum molybdenum concentration of [approx] 9 at.% Mo located at [approx] 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H[sub 2]SO[sub 4] have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and non-implanted alloys and the thicknesses of the films are similar. On the implanted alloy the outer ...
1992-06-01
XPS study of passive films formed on molybdenum-implanted austenitic stainless steels
International Nuclear Information System (INIS)
Austenitic stainless steels have been implanted with molybdenum ions (Mo"+, 100 keV, 2.5 x 10"1"6 atoms cm"-"2). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of #approx# 1000 A with a maximum molybdenum concentration of #approx# 9 at.% Mo located at #approx# 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H_2SO_4 have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and non-implanted alloys and the thicknesses of the films are similar. On the implanted alloy the outer hydroxide layer contains ...
1991-10-01
X-ray, Optical, and Radio Observations of SN 1999em and SN 1998S
Observations of the Type II-P (plateau) Supernova (SN) 1999em and Type IIn (narrow emission line) SN 1998S have enabled estimation of the profile of the SN ejecta, the structure of the circumstellar medium (CSM) established by the pre-SN stellar wind, and the nature of the shock interaction. SN 1999em is the first and only Type II-P detected at both X-ray and radio wavelengths. It is the least radio luminous and one of the least X-ray luminous SN ever detected (except for the unusual and very close SN 1987A). The Chandra X-ray data indicate non-radiative interaction of SN ejecta with a power-law density profile (rho \\propto r^{-n} with n ~ 7) with a pre-SN wind with a low mass loss rate of ~2 \\times 10^{-6} Msun/yr for a wind velocity of 10 km/sec, in close agreement with radio mass-loss rate estimates. The Chandra data show an unexpected, temporary rise in the 0.4--2.0 keV X-ray flux at ~100 days after explosion. SN 1998S appears reasonably typical of Type IIn ...
2001-01-01
X-ray production with sub-picosecond laser pulses
Energy Technology Data Exchange (ETDEWEB)
The interaction of intense, sub-picosecond laser pulses with solid targets produces intense picosecond x-ray pulses. With focused laser pulses of several 10 {sup 18} W/cm{sup 2}, He-like and H-like line radiation from targets such as aluminum and silicon has been produced. The energy conversion efficiency from the laser pulse energy to the 1--2 keV line x-rays is nearly one percent. The duration of the line x-ray radiation is of the order of ten picoseconds, although this may be an upper estimate because of the temporal resolution of the x-ray streak camera. The spatial extent of the x-ray source region is only slightly larger than the laser focal spot, or about 10 {mu}m in diameter. With these characteristics, such x-ray sources emit an intensity of nearly 10{sup 14} W/cm{sup 2}. Experiments and modeling which led to the above conclusions will be discussed.
1993-12-31
International Nuclear Information System (INIS)
We report the discovery of an active galactic nucleus (AGN) pair in the interacting galaxy system IRAS 20210+1121 at z = 0.056. An XMM-Newton observation reveals the presence of an obscured (N _H #approx# 5 x 10"2"3 cm"-"2), Seyfert-like (L _2_-_1_0_k_e_V = 4.7 x 10"4"2 erg s"-"1) nucleus in the northern galaxy, which lacks unambiguous optical AGN signatures. Our spectral analysis also provides strong evidence that the IR-luminous southern galaxy hosts a Type 2 quasar embedded in a bright starburst emission. In particular, the X-ray primary continuum from the nucleus appears totally depressed in the XMM-Newton band as expected in the case of a Compton-thick absorber, and only the emission produced by Compton scattering ('reflection') of the continuum from circumnuclear matter is seen. As such, IRAS 20210+1121 seems to provide an excellent opportunity to witness a key, early phase in the quasar evolution predicted by the theoretical models of quasar activation by ...
2010-10-20
Energy Technology Data Exchange (ETDEWEB)
Purpose: To evaluate micro computed tomography (micro-CT) for the assessment of osteochondritis dissecans in comparison with histology. Material and Methods: Osteochondritis dissecans lesions of 3 patients were evaluated using micro-CT (0.125 mA, 40 keV, 60 m slice thickness, 60 m isotropic resolution, entire sample) and light microscopy (toluidine blue, 3-5 m slice thickness). The methods were compared regarding preparation time, detectability of tissue types and morphologic features of bone and cartilage. Results: Non-destructive micro-CT imaging of the entire sample was faster than histologic preparation of a single slice for light microscopy. Morphologic features of bone and cartilage could be imaged in a comparable way to histology. It was not possible to image cells or different tissue types of bone and cartilage with micro-CT. Conclusion: Micro-CT is a fast, non-destructive tool that may be a supplement or, if detailed histologic information is not ...
2003-09-01
International Nuclear Information System (INIS)
Purpose: To evaluate micro computed tomography (micro-CT) for the assessment of osteochondritis dissecans in comparison with histology. Material and Methods: Osteochondritis dissecans lesions of 3 patients were evaluated using micro-CT (0.125 mA, 40 keV, 60 m slice thickness, 60 m isotropic resolution, entire sample) and light microscopy (toluidine blue, 3-5 m slice thickness). The methods were compared regarding preparation time, detectability of tissue types and morphologic features of bone and cartilage. Results: Non-destructive micro-CT imaging of the entire sample was faster than histologic preparation of a single slice for light microscopy. Morphologic features of bone and cartilage could be imaged in a comparable way to histology. It was not possible to image cells or different tissue types of bone and cartilage with micro-CT. Conclusion: Micro-CT is a fast, non-destructive tool that may be a supplement or, if detailed histologic information is not ...
2003-09-01
Kbeta-to-Kalpha X-ray intensity ratios of Ti and Ni have been measured in pure metals and in alloys of Ti(x)Ni(1-x) (x=0.7, 0.6, 0.5, 0.4 and 0.3) following excitation by 22.69 keV X-rays from a 10 mCi (109)Cd radioactive point source. The valence-electron configurations of these metals were determined by corporation of measured Kbeta-to-Kalpha X-ray intensity ratios with the results of multiconfiguration Dirac-Fock calculation for various valence-electron configurations. Valence-electron configurations of 3d-transition metals in alloys indicate significant differences with respect to the pure metals. Our analysis indicates that these differences arise from delocalization and/or charge transfer phenomena in alloys. Namely, the observed change of the valence-electron configurations of metals in alloys can be explained with the transfer of 3d electrons from one element to the other element and/or the rearrangement of electrons between 3d and 4s, 4p states of ...
2010-01-28
International Nuclear Information System (INIS)
K?-to-K? X-ray intensity ratios of Ti and Ni have been measured in pure metals and in alloys of TixNi1-x (x=0.7, 0.6, 0.5, 0.4 and 0.3) following excitation by 22.69 keV X-rays from a 10 mCi 109Cd radioactive point source. The valence-electron configurations of these metals were determined by corporation of measured K?-to-K? X-ray intensity ratios with the results of multiconfiguration Dirac-Fock calculation for various valence-electron configurations. Valence-electron configurations of 3d-transition metals in alloys indicate significant differences with respect to the pure metals. Our analysis indicates that these differences arise from delocalization and/or charge transfer phenomena in alloys. Namely, the observed change of the valence-electron configurations of metals in alloys can be explained with the transfer of 3d electrons from one element to the other element and/or the rearrangement of electrons between 3d and 4s, 4p states of individual metal atoms.
2010-06-01
Using Gamma-Ray Burst Prompt Emission to Probe Relativistic Shock Acceleration
It is widely accepted that the prompt transient signal in the 10 keV - 10 GeV band from gamma-ray bursts (GRBs) arises from multiple shocks internal to the ultra-relativistic expansion. The detailed understanding of the dissipation and accompanying acceleration at these shocks is a currently topical subject. This paper explores the relationship between GRB prompt emission spectra and the electron (or ion) acceleration properties at the relativistic shocks that pertain to GRB models. The focus is on the array of possible high-energy power-law indices in accelerated populations, highlighting how spectra above 1 MeV can probe the field obliquity in GRB internal shocks, and the character of hydromagnetic turbulence in their environs. It is emphasized that diffusive shock acceleration theory generates no canonical spectrum at relativistic MHD discontinuities. This diversity is commensurate with the significant range of spectral indices discerned in prompt burst ...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
Prompt fission neutron spectrum measurements at the University of Massachusetts Lowell 5.5 MV Van de Graaff accelerator laboratory require that the neutron detector efficiency be well known over a neutron energy range of 100 keV to 20 MeV. The efficiency of the detector, has been determined for energies greater than 5.0 MeV using the Weapons Neutron Research (WNR) white neutron source at the Los Alamos Meson Physics Facility (LAMPF) in a pulsed beam, time-of-flight (TOF) experiment. Carbon matched polyethylene and graphite scatterers were used to obtain a hydrogen spectrum. The detector efficiency was determined using the well known H(n,n) scattering cross section. Results are compared to the detector efficiency calculation program SCINFUL available from the Radiation Shielding Information Center at Oak Ridge National Laboratory.
1994-06-01
Three-step photoionization of mercury for application to separation of mercury isomers
International Nuclear Information System (INIS)
Development of techniques for separating isomeric nuclides is important to the investigation of schemes for gamma-ray lasers. In preparation for an experiment to separate 10_1_4 atoms of the /sub 197m/Hg (299 keV, tau/sub 1/2/ = 24 hours) isomer, we report isotopically selective resonance ionization of mercury atoms. This has been accomplished by three-step excitation via the 6_3P"1 and 8_1S"0 excited states, using three collinear pulsed laser beams of 254, 286, and 532 nm wavelengths from a Nd:YAG and two dye lasers. These beams were passed through a closed mercury-vapor cell containing electrostatic plates to which the ions were drawn. Ion current and fluorescent radiation were measured as a function of laser frequency. Hyperfine structures for the 254- and 286-nm transitions were observed.
The peak to background method in quantitative ion microprobe analysis of thick biological specimens
Energy Technology Data Exchange (ETDEWEB)
The use of the ratio of the characteristic intensity to the continuum background intensity (P/B ratio) of the X-ray spectrum for a quantitative ion microprobe (IMP) or PIXE (particle induced X-ray emission) analysis of thin biological specimens was proposed previously. The IMP analysis of thick biological specimens is also of considerable practical use. In this paper, the possibility of using the P/B ratio to quantify minor elements in thick biological specimens is investigated. The epoxy resin based standards with gradual concentrations of KCNS up to 0.6 mol/kg and NBS bovine liver were analyzed by a 27 MeV {alpha} particle microprobe. The measured peak to background ratios (between 4.4 to 5.7 keV) agreed well with the theoretical calculations. The calculations showed that the concentration dependence of the P/B ratios was determined mainly by the absorption of X-rays in specimens. The results indicate that the P/B method is useful for IMP analysis of thick ...
1991-05-01
Energy Technology Data Exchange (ETDEWEB)
We proposed that a new type of the electrostatic microwiggler with a wiggler period (0.1 mm {le}1{sub w}{le}1 mm) and the wiggler field strength (E{sub w}{le} 100 kV/m) can be produced on the surface of a PZT when a high power and high frequency ultrasonic wave travels through a PZT bar. Numerical simulations in the linear and nonlinear gain regime show that a weak microwiggler (E{sub w}100 kV/m,{lambda}{sub w}{approx}100 periods), operating in magnetoresonance with a strong guide field (B{sub o}{approx} 3.6T), can generate a millimeter and submillimeter radiations with medium electronic efficiency of few percents. It is shown that the maximum output power of the compact FEL using the wiggler system generated on the surface of the piezoelectric material may be upto a few Watts with a relatively low energy and low current electron beam (Ew {approx}100 keV and I{sub b}1 mA).
1995-12-31
The intriguing nature of the high energy gamma ray source XSSJ12270-4859
The nature of the hard X-ray source XSSJ12270-4859 is still unclear though it was claimed to be a magnetic Cataclysmic Variable. We here present a broad-band X-ray and gamma ray study based on a recent XMM-Newton observation and archival INTEGRAL and RXTE data. From the Fermi/LAT 1-year point source catalogue, we tentatively associate XSSJ12270-4859 with 1FGLJ1227.9-4852, a source of high energy gamma rays with emission up to 10GeV. We complement the study with UV photometry from XMM-Newton and ground-based optical and near-IR photometry. The X-ray emission is highly variable showing flares and intensity dips. The X-ray flares consist of flare-dip pairs. Flares are also detected in the UV range but not the dips. Aperiodic dipping behaviour is also observed during X-ray quiescence but not in the UV. The 0.2-100keV spectrum is featureless and described by a power law model with Gamma=1.7. The 100MeV-10GeV spectrum is instead represented by a power law index of 2.45. ...
2010-01-01
We present a detailed spectral analysis of point-like X-ray sources in the XMM-COSMOS field. Our sample of 135 sources only includes those that have more than 100 net counts in the 0.3-10 keV energy band and have been identified through optical spectroscopy. The majority of the sources are well described by a simple power-law model with either no absorption (76%) or a significant intrinsic, absorbing column (20%).As expected, the distribution of intrinsic absorbing column densities is markedly different between AGN with or without broad optical emission lines. We find within our sample four Type-2 QSOs candidates (L_X > 10^44 erg/s, N_H > 10^22 cm^-2), with a spectral energy distribution well reproduced by a composite Seyfert-2 spectrum, that demonstrates the strength of the wide field XMM/COSMOS survey to detect these rare and underrepresented sources.
2006-01-01
British Library Electronic Table of Contents (United Kingdom)
The alloying of steel surface with aluminum (Al) using Microsecond-pulsed Intense Electron Beams (MIEB-Al) was developed and optimized in order to be used for improving the corrosion resistance of the 316, 1.4970 and T91 steels, exposed to liquid Pb and Pb-Bi-eutectic. The procedure consists in two steps: (i) coating the steel surface with Al or an Al-containing alloy layer and (ii) melting the coating layer and the steel surface layer using intense pulsed electron beam. In order to cover the steel surface with an homogeneous and crack-free Al-alloyed layer, the following experimental conditions are required: Al coating thickness range 5-10mm, electron kinetic energy 120keV; pulse duration 30ms; energy density 40-45J/cm2; number of pulses 2-3. Using the mentioned procedure, the corrosion r...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga{sup +} focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is expected to influence the magnetic properties of the patterned features.
2005-04-01
International Nuclear Information System (INIS)
With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga"+ focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is expected to influence the magnetic properties of the patterned features.
2005-04-01
Study of iodine migration in zirconia using stable and radioactive ion implantation
Energy Technology Data Exchange (ETDEWEB)
The large uranium fission cross section leading to iodine and the behaviour of this element in the cladding tube during energy production and afterwards during waste storage is a crucial problem, especially for {sup 129}I which is a very long half-life isotope (T=1.59 x 10{sup 7} yr). Since a combined external and internal oxidation of the zircaloy cladding tube occurs during the reactor processing, iodine diffusion parameters in zirconia are needed. In order to obtain these data, stable iodine atoms were first introduced by ion implantation into zirconia with an energy of 200 keV and a dose equal to 8 x 10{sup 15} at cm{sup -2}. Diffusion profiles were measured using 3 MeV alpha-particle Rutherford backscattering spectrometry at each step of the annealing procedure between 700 C and 900 C. In such experiments a reduced iodine concentration was observed, which correlated to a diffusion-like process. Similar analysis has been performed using radioactive {sup 131}I ...
1998-03-01
International Nuclear Information System (INIS)
The nuclide "2"4"1Am decays by alpha emission to "2"3"7Np. Most of the decays (84.6%) populate the excited level of "2"3"7Np with energy of 59.54 keV. Digital coincidence counting was applied to standardize a solution of "2"4"1Am by alpha-gamma coincidence counting with efficiency extrapolation. Electronic discrimination was implemented with a pressurized proportional counter and the results were compared with two other independent techniques: Liquid scintillation counting using the logical sum of double coincidences in a TDCR array and defined solid angle counting taking into account activity inhomogeneity in the active deposit. The results show consistency between the three methods within a limit of a 0.3%. An ampoule of this solution will be sent to the International Reference System (SIR) during 2009. Uncertainties were analysed and compared in detail for the three applied methods.
2009-09-07
Spectroscopy of "8"8Sr with the "8"7Sr(n,#gamma#) and "8"7Sr(d,p) reactions
International Nuclear Information System (INIS)
The #gamma#-ray spectrum emitted after thermal neutron capture in "8"7Sr was studied at the ILL high flux reactor with pair- and intrinsic Ge-spectrometers. 661 transitions were assigned to the reaction "8"7Sr(n,#gamma#)"8"8Sr and 205 of them were placed into a "8"8Sr level scheme of 47 levels. This represents 88% of the observed intensity. The level energies were determined with a precision of better than 22 ppm; the neutron binding energy was determined as 11 112.69 (22) keV. To aid the analysis high resolution particle spectra of the reaction "8"7Sr(d,p)"8"8Sr were measured at 20 MeV deuteron energy with the Munich Q3D spectrometer. 85 states were observed with this reaction. The data helped to establish newly found levels and to differentiate between primary and secondary transitions in the (n,#gamma#) data. The observed level densities and primary transition strengths are compared with statistical model predictions and non-statistical effects are discussed. ...
Soft X-ray holography of FIB nanostructured Co/Pt multilayers
International Nuclear Information System (INIS)
Focused Ion Beam (FIB) milling is a powerful tool to produce ordered magnetic nanostructures. However, it is impossible to produce out-of-plane magnetized nanoscale structures from multilayer films by direct FIB writing. Co/Pt multilayers exhibit an out-of-plane easy axis due to strong perpendicular interface anisotropy. The interface contribution is known to be very sensitive to high energy ion irradiation. In case of 30 keV Ga ions it needs less than one ion per 100 surface atoms to destroy the perpendicular interface anisotropy. We demonstrate how this problem can be overcome by milling a Co/Pt multilayer, which has been deposited on a SiN membrane, from the rear side, through the SiN. The effect of the ions is determined as a function of applied dose utilizing the domain structure imaged by soft X-ray holography. When the magnetic material is removed we find only a very narrow range of destruction around the holes in contrast to the observations when milling ...
2009-03-22
Radioanalytical determination of chromium in welding fumes
International Nuclear Information System (INIS)
Radionuclide X-ray fluorescence analysis and fast neutron activation analysis were used for the determination of chromium. The excitation source for X-ray fluorescence analysis was a ring-shaped "2"4"1Am source with an activity of 18.5x10"9 Bq. SYNPOR filters of 35 mm in diameter were used for the measurement. The 5.414 keV Cr peak was measured with a Si(Li) detector. The sensitivity was 0.05 mg for a period of measurement of 1000 s. A neutron generator with an emission of 10"9 s"-"1 was used as the source of fast neutrons. "5"2V and "5"3V, the products of nuclear reaction with Cr, were measured gamma spectrometrically with a Ge(Li) detector. The sensitivity for Cr is 0.015 mg, in the presence of Mn which causes interference the sensitivity is a mere 0.075 mg. The mentioned methods were used to determine total Cr and Cr(VI) in welding aerosols. It was found that the most toxic form, i.e., Cr(VI), is released during manual arc welding of high alloy steels with ...
1985-01-01
High pressure xenon ionization chamber detectors are possible alternatives to traditional thallium doped sodium iodide (NaI(Tl)) and hyperpure germanium as gamma spectrometers in certain applications. Xenon detectors incorporating a Frisch grid exhibit energy resolutions comparable to cadmium/zinc/telluride (CZT) (e.g. 2% (at) 662keV) but with far greater sensitive volumes. The Frisch grid reduces the position dependence of the anode pulse risetimes, but it also increases the detector vibration sensitivity, anode capacitance, voltage requirements and mechanical complexity. We have been investigating the possibility of eliminating the grid electrode in high-pressure xenon detectors and preserving the high energy resolution using electronic risetime compensation methods. A two-electrode cylindrical high pressure xenon gamma detector coupled to time-to-amplitude conversion electronics was used to characterize the pulse rise time of deposited gamma photons. Time ...
2000-01-01
Production of atomic negative ion beams of the Group IA elements
Energy Technology Data Exchange (ETDEWEB)
A method has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb, and Cs). The method consists of the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag, or other metal powder. The following intensities are typical of those observed from carbonate samples subjected to /approximately/3 KeV cesium ion bombardment: Li/sup -/: greater than or equal to0.5 ..mu..A; Na/sup -/: greater than or equal to0.5 ..mu..A; K/sup -/: greater than or equal to0.5 ..mu..A; Rb/sup -/: greater than or equal to0.5 ..mu..A; Cs/sup -/: greater than or equal to0.2 ..mu..A. 7 refs., 2 figs., 1 tab.
1988-01-01
Performance testing of selected types of electronic personal dosimeters used in Sudan
International Nuclear Information System (INIS)
Measurements were carried out for calibration and performance testing of a set of 10 electronic personal dosimeters (EPDs) at the Secondary Standard Dosimetry Laboratory of Sudan. Calibrations were carried out at three X-ray beam qualities described in ISO standard 4037 in addition to 137Cs and 60Co gamma ray beams. The experimental was performed with EPDs mounted on ICRU Slab phantom. X-ray and ?-ray beams were characterized in terms of air kerma free-in-air which were converted to the known delivered personal dose equivalent, Hp(10) using appropriate the air kerma to personal dose equivalent conversion coefficients. Dosimeters tested showed excellent energy and angular response and relative error of indication within the recommended limit for photon energies from 65 keV to 1.25 MeV. The study showed encouraging results for using electronic dosimeters in personal dosimetry.
2010-12-01
Performance of Alcator C-Mod core Thomson scattering system
Energy Technology Data Exchange (ETDEWEB)
Design of the Alcator C-Mod Thomson scattering (TS) diagnostic is discussed and the results of the measurements are presented. The TS system has six spatial channels with observation volumes evenly distributed between the midplane and the edge of the plasma. Each channel is capable of measuring the electron density in the range N{sub e}=5{times}10{sup 19}{endash}5{times}10{sup 21} m{sup {minus}3} and temperature from T{sub e}=200 eV to 10 keV. A 30 Hz, 1.5 J per pulse Nd-YAG laser is employed allowing the measurements of evolution of T{sub e} and N{sub e} profiles during plasma shot. A laser beam position control and feedback system provides for the beam alignment stability and reliable electron density measurements. Examples of the core density and temperature profiles measured at different stages of the plasma evolution are discussed. {copyright} {ital 1999 American Institute of Physics.}
1999-01-01
New high-spin isomer and quasiparticle-vibration coupling in "1"8"7Ir
International Nuclear Information System (INIS)
The high-spin structure of the Z=77 nucleus "1"8"7Ir has been studied using the fusion-evaporation reaction "1"8"6W("7Li6n) at a beam energy of 59 MeV. The excitation scheme of this nucleus has been extended by more than 110 new states, including extensions of all previously established rotational bands. The band crossing region of the h_9_/_2 negative-parity yrast band has been revised and new intrinsic high-K states have been identified. In particular, a 29/2"- isomeric state [T_1_/_2=1.8(5)#mu#s] at an excitation energy of 2487 keV has been observed for the first time, and on top of it, a rich level scheme reaching up to spin (59/2"-) and excitation energies around 7 MeV has been established.
2010-05-01
Neutrino emission in neutron matter from magnetic moment interactions
Neutrino emission drives neutron star cooling for the first several hundreds of years after its birth. Given the low energy ($\\sim$ keV) nature of this process, one expects very few nonstandard particle physics contributions which could affect this rate. Requiring that any new physics contributions involve light degrees of freedom, one of the likely candidates which can affect the cooling process would be a nonzero magnetic moment for the neutrino. To illustrate, we compute the emission rate for neutrino pair bremsstrahlung in neutron-neutron scattering through photon-neutrino magnetic moment coupling. We also present analogous differential rates for neutrino scattering off nucleons and electrons that determine neutrino opacities in supernovae. Employing current upper bounds from collider experiments on the tau magnetic moment, we find that the neutrino emission rate can exceed the rate through neutral current electroweak interaction by a factor two, signalling ...
2004-01-01
Molar extinction coefficients of some fatty acids
International Nuclear Information System (INIS)
The attenuation of gamma rays in some fatty acids, viz. formic acid (CH_2O_2), acetic acid (C_2H_4O_2), propionic acid (C_3H_6O_2), butyric acid (C_4H_8O_2), n-hexanoic acid (C_6H_1_2O_2), n-caprylic acid (C_8H_1_6O_2), lauric acid (C_1_2H_2_4O_2), myristic acid (C_1_4H_2_8O_2), palmitic acid (C_1_6H_3_2O_2), oleic acid (C_1_8H_3_4O_2) and stearic acid (C_1_8H_3_6O_2), has been measured at the photon energies 81, 356, 511, 662, 1173 and 1332 keV. Experimental values for the molar extinction coefficient, the effective atomic number and the electron density have been derived and compared with theoretical calculations. There is good agreement between experiment and theory.
2002-10-01
Molar extinction coefficients of some commonly used solvents
International Nuclear Information System (INIS)
Molar extinction coefficients of some commonly used solvents (ethanol (C_2H_5OH), methanol (CH_3OH), propanol (C_3H_7OH), butanol (C_4H_9OH), water (H_2O), toluene (C_7H_8), benzene (C_6H_6), carbontetrachloride (CCl_4), acetonitrile (C_4H_3N), chlorobenzene (C_6H_5Cl), diethylether (C_4H_1O) and dioxane (C_4H_8O_2)) have been determined by a well-collimated narrow beam transmission geometry at 279, 356, 662, 1173, 1252 and 1332 keV #gamma# rays. The total #gamma# ray interaction cross sections of these solvents have also been determined. A good agreement has been obtained between the experimental results with the theoretical values evaluated through XCOM calculations.
2006-07-01
Molar extinction coefficients of some carbohydrates in aqueous solutions
Molar extinction coefficients of some carbohydrates viz. L-arabinose (C5H10O5), D-glucose (C6H12O6), D-mannose (C6H12O6), D-galactose (C6H12O6), D(-) fructose (C6H12O6) and maltose (C12H24O12) in aqueous solutions have been determined at 81, 356, 511, 662, 1173 and 1332 keV by gamma ray transmission method in a narrow beam good geometry set-up. These coefficients have been found to depend upon the photon energy following a 4-parameter polynomial. These extinction coefficients for different sugars having the same molecular formula have same values varying within experimental uncertainty. Within concentration ranges studied, Beer--Lambert law is obeyed very well.
2002-03-01
Molar extinction coefficients in aqueous solutions of some amino acids
International Nuclear Information System (INIS)
Mass attenuation coefficients of amino acids viz. glycerine (C_2H_5NO_2), 1-Serine (C_3H_7NO_3), 1-Theronine (C_4H_9NO_3), 1-Proline (C_5H_9NO_2), 1-Valine (C_5H_1_1NO_2) and 1-Phenylalanine (C_9H_1_1NO_2) in aqueous solutions have been determined at 81, 356, 511, 662, 1173 and 1332 keV by the gamma-ray transmission method in a narrow beam good geometry setup. Precisely measured densities of these solutions were used for the determination of these coefficients which varied systematically with the corresponding changes in the concentrations (g/cm"3) of the solutions. Molar extinction coefficients of amino acids were then obtained at these energies and were found to be in good agreement with the theoretical results. In addition, total interaction cross sections of amino acids in aqueous solutions were also calculated. (author)
2002-09-01
Microstructural observation of focused ion beam modification of Ni silicides/Si thin films
International Nuclear Information System (INIS)
Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the ...
1996-12-02
Micro and nano patterning by focused ion beam enhanced adhesion
International Nuclear Information System (INIS)
We report a new method of generating nano and micro patterns using focused ion beam (FIB) induced adhesion. The method utilizes selective irradiation of thin metallic films grown on substrates by focused ion beam followed by peel off. After peel off of the irradiated thin film it is observed that the ion beam scanned portions are retained on the substrate, creating nano and micro patterns. The method is suitable for materials of which the adhesion to the substrate can be improved by ion bombardment. The phenomenon has been demonstrated by creating gold nano patterns of different shapes and sizes ranging from 500 nm to 5 #mu#m on SiO_2-Si substrate using 10-30 keV Ga FIB at beam currents up to 10 pA. The mechanism involved in the process has been discussed. The technique could be utilized to prepare micro and nano patterns of thin films deposited on an appropriate substrate for optical, plasmonic and sensor related applications.
2009-05-01
Measurement of gamma-ray detection efficiency in irradiated materials examination facility
Energy Technology Data Exchange (ETDEWEB)
The detection efficiency of gamma scanning system in irradiated materials examination facility has been measured. Gamma-ray sources used in this experiment are Cs-Co standard sources a PWR spent fuel rod in which {sup 134}Cs and {sup 154}Eu peaks are clearly identified in the energy region of 500 to 1,600 keV. The distance between source and detector is about 1.6 m. A slit type collimator with 3 mm-width window and 30 mm-thick lead block are installed between source and detector. The detector is a HPGe detector. This equipment is mainly used in gamma scanning of irradiated nuclear fuel. The measured detection efficiency seems to be 1.89 x 10{sup -6} % for 1 MeV gamma-ray. With these results the activities of unknown sources could be measured. This results are expected to be used in the measurement of the absolute distribution of gamma emitting nuclides in nuclear fuel.
2001-05-01
Measurement of $\\phi$(1020) meson leptonic width with CMD-2 detector at VEPP-2M Collider
The $\\phi$(1020) meson leptonic width has been determined from the combined analysis of 4 major decay modes of the resonance ($\\phi\\to K^+ K^-,K^0_LK^0_S,\\pi^+\\pi^-\\pi^0,\\eta\\gamma$) studied with the CMD-2 detector at the VEPP-2M $e^+e^-$ collider. The following value has been obtained: $\\Gamma(\\phi\\to e^+e^-) = 1.235\\pm 0.006\\pm 0.022$ keV. The $\\phi(1020)$ meson parameters in four main decay channels have been also recalculated: $B(\\phi\\to K^+K^-) = 0.493\\pm 0.003\\pm 0.007$, $B(\\phi\\to K_LK_S) = 0.336\\pm 0.002\\pm 0.006$, $B(\\phi\\to\\pi^+\\pi^-\\pi^0) = 0.155\\pm 0.002\\pm 0.005$, $B(\\phi\\to\\eta\\gamma) = 0.0138\\pm 0.0002\\pm 0.0002$.
2010-01-01
Measurement of "1"0"1Tc Half-Life
International Nuclear Information System (INIS)
75 mg (NH_4)_6Mo_7O_24 #centre dot# 4H_2O solution was irradiated for 20 min in miniature neutron source reactor (MNSR) and cooled for 12 min. In the conditions of 0.8 mol/L HNO_3, phase ratio 1:1, the solution of "1"0"1Tc sample was extracted twice with #alpha#-benzoin oxime/ethyl acetate phase to remove "1"0"1Mo and a radiochemically pure and carrier-free "1"0"1Tc product was obtained. The half-life of "1"0"1Tc was accurately measured with a HPGe #gamma#-detector by following 306.8 keV #gamma#-ray about 150 min, and processed the data by three methods, R-value method, iterative method and translation method. Five parallel measurments gave a half-life (14.02 #+-# 0.01) min (n=5) for "1"0"1Tc. (authors)
2009-11-01
M X-ray production in Nd, Gd, Ho and Lu by 1-6 MeV lithium ions
Energy Technology Data Exchange (ETDEWEB)
M-shell X-rays of the rare-earth elements {sub 60}Nd, {sub 64}Gd, {sub 67}Ho and {sub 71}Lu were measured for lithium ion bombardment in the energy range 1.0-6.0 MeV. The M-shell X-rays with energies of 0.978-1.631 keV were detected with a LINK analytical detector. The efficiency of the detector was determined by using the known atomic-field bremsstrahlung cross-sections from low energy electron beams and K-shell X-ray measurements with light projectiles. The measured cross-sections are compared to the predictions of the first Born approximation and the ECPSSR (energy loss and Coulomb deflection effects, perturbed stationary state approximation with relativistic correction) theories. The best theoretical description of the present data is given by the ECPSSR theory, even though the discrepancy between data and theory is increasing at higher projectile energies.
2004-06-01
Low-energy measurements of electron capture by multicharged ions from excited hydrogen atoms
International Nuclear Information System (INIS)
For very low collision energies electron capture from excited hydrogen by multicharged ions is characterized by enormous cross sections, the predicted maximum being comparable to the geometric size of the Rydberg atom. The ion-atom merged-beams technique is being used to study these collisions for the variety of charge states and the wide range of energies (0.1 to 1000 eV/amu) accessible to the apparatus. A neutral D beam containing a Rydberg atom population proportional to 1/n"3 is produced by collisional electron detachment of 8 keV D"- in N_2 gas. An applied electric field results in the range (n=24--11) depending on the strength of the field applied. This beam is then merged with O"3"+ or O"5"+ ion beams at low relative collision velocities where the resultant beam-beam signal of D"+ due to electron loss is dominated by electron capture. From the sharp decrease in the observed beam-beam signal as the electric field increases it is inferred that the electron ...
Energy Technology Data Exchange (ETDEWEB)
Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from forming islands during high temperature annealing.
1995-05-01
Energy Technology Data Exchange (ETDEWEB)
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms for ...
1985-01-01
International Nuclear Information System (INIS)
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms for the boron ...
Lifetime and {ital g}-factor measurements of the 11{sup {minus}} isomer in {sup 92}Tc
Energy Technology Data Exchange (ETDEWEB)
The half-life ({ital T}{sub 1/2}) and {ital g} factor of the 2002 keV 11{sup {minus}} isomer in the odd-odd nucleus {sup 92}Tc produced by the pulsed heavy-ion reaction {sup 68}Zn({sup 28}Si,{ital p}3{ital n}){sup 92}Tc have been measured using time differential perturbed angular distribution method. The measured {ital T}{sub 1/2} value is 3.15(20) ns. From the observed spin precession frequency {omega}{sub {ital L}} of a {sup 92}Tc recoil implanted into a ferromagnetic Ni host, we obtain the {ital g} factor to be 0.806(20). The measured value of the {ital g} factor is in good agreement with a shell model analysis carried out using {pi}({ital p}{sub 1/2}{ital g}{sub 9/2}) and {nu}({ital p}{sub 1/2}{ital g}{sub 9/2}) orbitals for the proton particles and neutron holes outside the {sup 88}Sr core. {copyright} {ital 1996 The American Physical Society.}
1996-12-01
Large area, low capacitance Si(Li) detectors for high rate x-ray applications
Energy Technology Data Exchange (ETDEWEB)
Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over conventional detectors. Detector fabrication procedures, I-V and C-V characteristics, noise ...
1992-10-01
Energy Technology Data Exchange (ETDEWEB)
K{beta}-to-K{alpha} X-ray intensity ratios of Ti, V, Cr, and Co in pure metals and their disilicide compounds have been measured following excitation by 59.54 keV {gamma}-rays from a 200 mCi {sup 241}Am point-source. The K{beta}-to-K{alpha} intensity ratios of all these metals in the disilicide compounds are found to be less than the corresponding ratios for pure metals. Comparison of the measured K{beta}-to-K{alpha} intensity ratios for the disilicides and pure metals with the multiconfiguration Dirac-Fock calculations indicates increase of the 3d electron populations of Ti, V, Cr, and Co in the disilicides from their pure metal values suggesting the rearrangement of electrons between 3d and 4s states of the individual metal atom. This rearrangement is found to be opposite to that observed in our previously reported work on NiSi{sub 2} and CuSi{sub 2}.
1999-06-01
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
Energy Technology Data Exchange (ETDEWEB)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation loop were observed from the time-evolutionary ...
2004-11-15
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
International Nuclear Information System (INIS)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and dislocation loop were observed from the time-evolutionary study ...
2004-11-01
International Nuclear Information System (INIS)
K#beta#-to-K#alpha# X-ray intensity ratios of Ti, V, Cr, and Co in pure metals and their disilicide compounds have been measured following excitation by 59.54 keV #gamma#-rays from a 200 mCi "2"4"1Am point-source. The K#beta#-to-K#alpha# intensity ratios of all these metals in the disilicide compounds are found to be less than the corresponding ratios for pure metals. Comparison of the measured K#beta#-to-K#alpha# intensity ratios for the disilicides and pure metals with the multiconfiguration Dirac-Fock calculations indicates increase of the 3d electron populations of Ti, V, Cr, and Co in the disilicides from their pure metal values suggesting the rearrangement of electrons between 3d and 4s states of the individual metal atom. This rearrangement is found to be opposite to that observed in our previously reported work on NiSi_2 and CuSi_2.
1999-06-01
Iridium and PGE in sedimentary rocks; Iridium et platinoides dans les roches sedimentaires
Energy Technology Data Exchange (ETDEWEB)
The detection limit of Instrumental Neutron Activation Analysis (INAA), about a few microgram per kg, is not sufficient to determine iridium concentrations in most geological samples. Use of the coincidence counting of the 316 and 468 keV gamma-rays emitted during the decay of {sup 192}Ir, improved the sensitivity (0.01 microgram per kg). The high iridium content of the clay layers from the Cretaceous-Tertiary transition (KTB) has been considered as an evidence of the extra-terrestrial origin of the KTB mass extinction. However some results indicate that a significant part of the iridium content in sediments has a volcanic origin. Radiochemical Neutron Activation Analysis (RNAA) in some KTB samples and in basic and ultra-basic rocks show that, unlike in volcanic products, no PGE (platinoids) fractionation appears in KTB samples. The nearby chondritic PGE pattern supports an extra-terrestrial origin for the KTB iridium anomaly. 2 figs., 2 tabs., 37 refs.
1994-12-31
Investigation of natural radionuclides in selected NORM-samples
International Nuclear Information System (INIS)
A programme has been initiated by the Coordinating Office for Monitoring of enhanced natural radioactivity of the Federal Office for Radiation Protection to investigate different kinds of sample materials with enhanced naturally occurring radioactivity (NORM) such as scales from oilfield and naturally gasfield pipes, blast furnace sludge and sinter dust from the production of pig iron, as well as bauxit and red mud from the production of aluminium oxide. The aim of these investigations is to find proper preparation and measuring methods which allow, in particular, a sample treatment with optimised effort combined with a reliable determination of the specific activities of the dominating radionuclides. Of particular interest is the method of gamma-ray spectrometry, since this method has been used for most of our studies of sample materials. Due to different compositions of calibration and NORM-samples, e.g. different densities, and the analysis of low-energy gamma-rays such as the 46.54 ...
2005-09-20
Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon
Energy Technology Data Exchange (ETDEWEB)
Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and implications for ...
1996-09-01
Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon
International Nuclear Information System (INIS)
Ion implantation of Si (60 keV, 1x10"1"4/cm"2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1x10"1"8 and 1x10"1"9/cm"3. Following post-implantation annealing at 740 degree C for 15 min to allow agglomeration of the available interstitials into elongated #left brace#311#right brace# defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in #left brace#311#right brace# defects as a function of boron concentration, up to nearly complete disappearance of the #left brace#311#right brace# defects at boron concentrations of 1x10"1"9/cm"3. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and implications for transient-enhanced diffusion of B at high ...
Energy Technology Data Exchange (ETDEWEB)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.
2002-01-01
International Nuclear Information System (INIS)
The inelastic energy losses for single collisions of Xe"+ ions with Xe targets have been measured for incident ion energies from 0.3 to 1.2 MeV and for scattering angles from 3"0 to 20"0. The energy losses were found to range from 1 to 11 keV with distinct steps at distances of closest approach of 0.22 and 0.12 A. By comparing these data with earlier ionization data by the same authors these steps are shown to be caused by M-shell excitation. Other excitations observed in the ionization data may be attributed to N-shell excitation. The distances of closest approach at which these excitations occur agree well with calculations by Eichler and Wille and co-workers, giving further evidence of the usefulness of Fano and Lichten's one-electron molecular model and these calculations.
High variability in Vela X-1: giant flares and off states
We investigate the spectral and temporal behavior of the high mass X-ray binary Vela X-1 during a phase of high activity, with special focus on the observed giant flares and off states. INTEGRAL observed Vela X-1 in a long almost uninterrupted observation for two weeks in 2003 Nov/Dec. The data were analyzed with OSA 7.0 and FTOOLS 6.2. We derive the pulse period, light curves, spectra, hardness ratios, and hardness intensity diagrams, and study the eclipse. In addition to an already high activity level, Vela X-1 exhibited several intense flares, the brightest ones reaching a maximum intensity of more than 5 Crab in the 20-40 keV band and several off states where the source was no longer detected by INTEGRAL. We determine the pulse period to be 283.5320+/-0.0002 s, which is stable throughout the entire observation. Analyzing the eclipses provided an improvement in the ephemeris. Spectral analysis of the flares indicates that there appear to be two types of flares: ...
2008-01-01
Hard X-ray identification of Eta Carinae and steadiness close to periastron
Context: The colliding-wind binary Eta Car exhibits soft X-ray thermal emission that varies strongly around periastron, and non-thermal emission seen in hard X-rays and gamma-rays. Aims: To definitively identify Eta Car as the source of the hard X-ray emission, to examine how changes in the 2-10 keV band influence changes in the hard X-ray band, and to understand more clearly the mechanisms producing the non-thermal emission using new INTEGRAL observations obtained close to periastron. Methods: A Chandra observation encompassing the ISGRI error circle was analysed, and all other soft X-ray sources (including the outer shell of Eta Car itself) were discarded as likely counter-parts. New hard X-ray images of Eta Car were studied close to periastron, and compared to previous observations far from periastron. Results: The INTEGRAL component, when represented by a power law (with a photon index of 1.8), would produce more emission in the Chandra band than observed from ...
2010-01-01
Grain boundary transport in x-ray irradiated polycrystalline diamond
International Nuclear Information System (INIS)
The transport properties of a 'thin' polycrystalline diamond film are analyzed after the sample exposure to 8.06-keV x-ray radiation. Structure and morphology of the as-grown film have been evaluated by Raman, x-ray diffraction, and scanning electron microscopy techniques. The transport properties have been investigated by measuring dark current-voltage characteristics in the temperature range of 60 to 360 K. Ohmic transport has been evidenced on the as-grown film up to 1.16x10"5 V/cm. After irradiation, nonlinear contributions to the dark current have been evidenced and related to field-assisted thermal ionization of traps. Below 200 K, hopping mechanisms have been observed. Correlations have been found among x-ray irradiation, density of traps involved in the transport processes, and the nonhomogeneous nature of the sample. A simple model of the grain boundary structure is proposed to explain the observations.
2003-05-15
Free electron laser facilities employing a 150-MeV linac injector for Saga synchrotron light source
International Nuclear Information System (INIS)
Free electron laser (FEL) facilities as the FELI FEL Facility are proposed, for which a 150-MeV linac type injector for a Saga synchrotron light source (SLS) is employed in FEL mode. The linac has two operating modes; short macropulse mode a 1 #mu#s at 150 MeV for injection to a 1 - 1.3-GeV third generation type storage ring and long macropulse mode of 12 #mu#s at 100 MeV for four FEL Facilities. The macropulse beam consists of a train of several ps, 0.6 nC microbunches (peak current 100 A) repeating at 89.25 MHz. We are aiming to supply high power level photon beams covering an attractive wavelength range from 0.05 nm (25 keV) to 200 #mu#m (0.006 eV) for scientific researches, bio-medical and industrial applications, using the Saga third generation type SLS with a superconducting wiggler and the proposed four FEL Facilities. (author)
1999-12-01
Evidence of polarisation in the prompt gamma-ray emission from GRB 930131 and GRB 960924
The true nature of the progenitor to GRBs remains elusive; one characteristic that would constrain our understanding of the GRB mechanism considerably is gamma-ray polarimetry measurements of the initial burst flux. We present a method that interprets the prompt GRB flux as it Compton scatters off the Earth's atmosphere, based on detailed modelling of both the Earth's atmosphere and the orbiting detectors. The BATSE mission aboard the \\textit{CGRO} monitored the whole sky in the 20 keV - 1 MeV energy band continuously from April 1991 until June 2000. We present the BATSE Albedo Polarimetry System (BAPS), and show that GRB 930131 and GRB 960924 provide evidence of polarisation in their prompt flux that is consistent with degrees of polarisation of $\\Pi>35$% and $\\Pi>50$% respectively. While the evidence of polarisation is strong, the method is unable to strongly constrain the degree of polarisation beyond a systematics based estimation. Hence the ...
2005-01-01
Energy Technology Data Exchange (ETDEWEB)
(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As ...
1997-11-01
International Nuclear Information System (INIS)
(001) CZ silicon wafers were implanted with arsenic (As"+) at energies of 10--50 keV to doses of 2 x 10"1"4 to 5 x 10"1"5/cm"2. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.
1996-12-02
Energy Technology Data Exchange (ETDEWEB)
The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. The size of He bubbles in the fiber was slightly increased by implanting Al or Be ions. These results suggest that Al or Be as ...
2007-03-15
International Nuclear Information System (INIS)
The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si"2"+, 1.0-MeV He"+ and 340-keV H"+) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. The size of He bubbles in the fiber was slightly increased by implanting Al or Be ions. These results suggest that Al or Be as transmutation ...
2007-03-01
EB-curing of coatings on wood composite boards
International Nuclear Information System (INIS)
The industrial radiation processing using low energy electron beam (EB) accelerators lower than 300 keV offers high speed, safe technologies for the chemical conversion of thin layer coatings. Because of the nonselective mode of initiating chain reaction polymerization involving free radicals in synthetic coating layers and suitable substrates, the EB curing of the coatings on woods and papers has particular advantage. Hungary decided to start an up-to-date EB line to process cement-bound (CB) wood chipboards with pigmented acrylic coatings. The CB wood chipboards contain more than 60 % of portland cement and up to 40 % of wood particles. They are produced as large boads of 6 - 16 mm thickness. In their fireproof character and other aspects, they are similar to asbestos-cement boards without containing carcinagenic asbestos, and are stable against moisture and atmospheric influences. EB-cured acrylate coating improved further those properties, and makes them ...
1988-10-01
Doping of silicon carbide by ion implantation
Energy Technology Data Exchange (ETDEWEB)
A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is ...
2001-07-01
Energy Technology Data Exchange (ETDEWEB)
Rotationally resolved spectra of kinetic energy releases epsilon-c in predissociations of H/sub 2/, after dissociative charge exchange of H/sub 2/ /sup +/ with Cs atoms, are obtained. The experiments are performed with natural and with pure parahydrogen. The predissociations with epsilon-c<1.9 eV constitute less than 5% of the total amount of dissociations to HXchemically bondH at a beam energy of 5 keV. All strong rotational peaks observed could be attributed to n = 3 Rydberg states which predissociate to H(1s)+H(2l). Vibrational-rotational series are observed of the d /sup 3/Pi/sub u//sup +/, D /sup 1/Pi/sub u//sup +/, and J /sup 1/..delta../sub g//sup +/ states. Predissociation by barrier tunneling is reported of v = 4 levels of the h /sup 3/..sigma../sub g//sup +/ state and of v = 4 and 5 levels of the i /sup 3/Pi/sub g/ state. Selectivity of the charge-exchange process for different n = 3 states, or even for different parity states, is concluded.
1986-11-01
Direct patterning of gold oxide thin films by focused ion-beam irradiation
International Nuclear Information System (INIS)
For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force microscopy (AFM) ...
2000-09-01
Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
Energy Technology Data Exchange (ETDEWEB)
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.
2004-02-01
Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
International Nuclear Information System (INIS)
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.
2004-02-01
Development of real time personal neutron dosimeter with two silicon detectors
Energy Technology Data Exchange (ETDEWEB)
The personal neutron dosimetry becomes more important with the increasing use of nuclear and accelerator facilities. The solid state track detector, film badge and thermo-luminescent dosimeter have widely been used as passive-type personal neutron dosimeters, but the real-time neutron dosimeter is strongly needed. A real time personal dosimeter which could give neutron dose equivalent over wide energy range from thermal to 10 odd MeV by using two neutron sensors has been developed by our group. For practical commercial product, some changes from these prototype sensors have recently been done by Fuji Electric Co. Ltd. The purpose of this work is the final performance test of the dosimeter just before sale. We checked again about the sensitivity in the monoenergetic neutron field from 8 keV to 15 MeV and in the neutron fields around a few accelerator facilities. (author)
1997-07-01
The authors develop a procedure for the determination of the Al, Ti, V, Cu, Mn, Mo, and W content of nickel-base alloys by neutron activation analysis. An M-10 microtron with a beryllium target in a paraffin microtron (with a beryllium target) in a paraffin moderator served as the neutron source. In order to evaluate the procedure for quantitative analysis, the authors determined the contents of the above elements in five reference standards, the bulk density of which was 2.94-4.17 g/cm/sup 3/. The difference in the self-absorption of the gammaquanta was assessed by determining the number of gamma-quanta with energies in the range 60-1332 keV that had passed through the RS N4 and N8 which showed the greatest difference in their composition. The results of the determination are presented. The proposed procedure is simple and rapid and can be used to determine the alloying components of nickel-based alloys with satisfactory precision.
1986-04-01
International Nuclear Information System (INIS)
The authors develop a procedure for the determination of the Al, Ti, V, Cu, Mn, Mo, and W content of nickel-base alloys by neutron activation analysis. An M-10 microtron with a beryllium target in a paraffin microtron (with a beryllium target) in a paraffin moderator served as the neutron source. In order to evaluate the procedure for quantitative analysis, the authors determined the contents of the above elements in five reference standards, the bulk density of which was 2.94-4.17 g/cm"3. The difference in the self-absorption of the gammaquanta was assessed by determining the number of gamma-quanta with energies in the range 60-1332 keV that had passed through the RS N4 and N8 which showed the greatest difference in their composition. The results of the determination are presented. The proposed procedure is simple and rapid and can be used to determine the alloying components of nickel-based alloys with satisfactory precision.
Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry
A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of approx 1nA and a transconductance of ...
2002-01-01
Energy Technology Data Exchange (ETDEWEB)
We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650-800 deg. C. This is achieved by incorporating a layer of epitaxially grown Si{sub 1-y}C {sub y} layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 x 10{sup 14} cm{sup -2} was performed followed by annealing at temperature ranges of 650-800 deg. C. Samples with the Si{sub 1-y}C {sub y} layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime.
2006-05-10
International Nuclear Information System (INIS)
We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the different processes involved which lead to the FIB induced deposition.
2008-04-01
CoSi_2 nanostructures by writing FIB ion beam synthesis
International Nuclear Information System (INIS)
A mass separated focused ion beam (FIB) is a very useful tool to fabricate nanostructures by writing implantation within an ion beam synthesis process. In these investigations the IMSA-OrsayPhysics FIB, equipped with a Co_3_6Nd_6_4 alloy liquid metal ion source, was applied. Si(100) and (111) wafers were implanted with 60 keV Co"+"+ ions in the dose range of 2 . 10"1"6 to 2 . 10"1"7 cm"-"2. Implantation parameters were investigated, like pixel dwell time, relaxation time (time between two cycles), dose rate as well as the pixel overlapping factor. The subsequent annealing was done in a two step process, namely 600 deg. C for 60 min and 1000 deg. C for 30 min in a N_2 ambient. The results obtained by SEM investigations in terms of continuous nanowire structures following the direction and interrupted CoSi_2 pattern in the direction show a clear dependence on the time scale as well as the scanning mode of the irradiation. Structure sizes as small as 10 nm are ...
2006-07-01
Chandra Observations of Nuclear X-ray Emission from a Sample of Radio Sources
We present the X-ray properties of a sample of 17 radio sources observed with the Chandra X-ray Observatory as part of a project aimed at studying the X-ray emission from their radio jets. In this paper, we concentrate on the X-ray properties of the unresolved cores. The sample includes 16 quasars (11 core-dominated and 5 lobe-dominated) in the redshift range z=0.30--1.96, and one low-power radio-galaxy at z=0.064. No diffuse X-ray emission is present around the cores of the quasars, except for the nearby low-power galaxy that has diffuse emission on a scale and with a luminosity consistent with other FRIs. No high-amplitude, short-term variability is detected within the relatively short Chandra exposures. However, 1510-089 shows low-amplitude flux changes with a timescale of $\\sim$25 minutes. The X-ray spectra of the quasar cores are generally well described by a single power law model with Galactic absorption. However, in six quasars we find soft X-ray excess emission below 1.6 ...
2003-01-01
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
Energy Technology Data Exchange (ETDEWEB)
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in ...
1999-04-01
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
International Nuclear Information System (INIS)
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers. copyright 1999 ...
1999-04-01
Boron transient enhanced diffusion in heavily phosphorus doped silicon
Energy Technology Data Exchange (ETDEWEB)
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
1997-11-01
International Nuclear Information System (INIS)
The neutron capture cross sections of the stable molybdenum isotopes have been measured with high energy resolution (#DELTA#E/E < approximately 0.2%), between 3 and 90 keV neutron energy, at the 40 m station of ORELA. Average resonance parameters are extracted for s- and p-wave resonances. The s-wave neutron strength function is close to 0.5x10"-"4 for all isotopes, but the p-wave strength function exhibits a well defined peak near A approximately 95. Both s- and p-wave radiative widths decrease markedly as further neutrons are added to the closed shell. The p-wave radiative widths are generally greater than the s-wave widths showing the presence of non-statistical #gamma#-decay mechanisms. Valence neutron theory fails to explain the magnitude of the p- to s-wave radiative width disparity and doorway state processes are invoked. In particular, the data for "9"8Mo appear to violate the usual valence theory, since the correlations between radiative and neutron ...
Energy Technology Data Exchange (ETDEWEB)
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. {copyright} {ital 1996 American ...
1996-01-01
International Nuclear Information System (INIS)
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5x10"1"3 cm"-"2 Si into (001)Si, followed by a high temperature (815 degree C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the open-quote open-quote+1 close-quote close-quote model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. copyright 1996 American Institute of Physics.
Atomic masses of "6Li,"2"3Na,"3"9","4"1K,"8"5","8"7Rb, and "1"3"3Cs
International Nuclear Information System (INIS)
The atomic masses of the alkali-metal isotopes "6Li,"2"3Na,"3"9","4"1K,"8"5","8"7Rb, and "1"3"3Cs have been obtained from measurements of cyclotron frequency ratios of pairs of ions simultaneously trapped in a Penning trap. The results, with one standard deviation uncertainty, are: M("6Li)=6.015 122 887 4(16)u,M("2"3Na)=22.989769 282 8(26)u,M("3"9K)=38.963 706 485 6(52)u,M("4"1K)=40.961 825 257 4(48)u,M("8"5Rb)=84.911 789739(9)u,M("8"7Rb)=86.909 180 535(10)u, and M("1"3"3Cs)=132.905 451 963(13)u. Our mass of "6Li yields an improved neutron separation energy for "7Li of 7251.1014(45) keV.
2010-10-01
Alloying effect on K to L shell vacancy transfer probabilities in 3d transition metals
British Library Electronic Table of Contents (United Kingdom)
The alloying effects on K to L shell vacancy transfer probabilities (?KL) in 3d transition metals have been carried out by X-ray fluorescence studies of various alloy compositions. K X-ray intensity ratios of Ti, Cr, Fe, Co, Ni, and Cu elements in the FexNi1?x, FexCr1?x, NixCr1?x, FexCryNi1?(x+y), TixNi1?x, TixCo1?x, and CoxCu1?x alloys have been measured following excitation by 22.69keV X-rays from a 10 mCi 109Cd radioactive point source and ?KL values for alloying elements have been determined from these ratios. The spectrum of characteristic K-X-ray photons from samples were detected with a high resolution Si(Li) detector coupled to a 4 K multichannel analyzer. The present investigation makes it possible to ...
2010-01-01
A Distinctive Disk-Jet Coupling in the Seyfert-1 AGN NGC 4051
We report on the results of a simultaneous monitoring campaign employing eight Chandra X-ray (0.5-10 keV) and six VLA/EVLA (8.4 GHz) radio observations of NGC 4051 over seven months. Evidence for compact jets is observed in the 8.4 GHz radio band; This builds on mounting evidence that jet production may be prevalent even in radio-quiet Seyferts. Assuming comparatively negligible local diffuse emission in the nucleus, the results also demonstrate an inverse correlation of L_radio proportional to L_X-ray ^(-0.72+/-0.04) . Current research linking the mass of supermassive black holes and stellar-mass black holes in the "low/hard" state to X-ray luminosities and radio luminosities suggest a "fundamental plane of accretion onto black holes" that has a positive correlation of L_radio proportional to L_X-ray^(0.67+/-0.12) . Our simultaneous results differ from this relation by more than 11 sigma, indicating that a separate mode of accretion and ejection may operate in ...
2010-01-01
In vivo and in vitro evaluation of dota-lanreotide radiolabelled with gallium-67
International Nuclear Information System (INIS)
One of the refinements of modern Nuclear Medicine is the capacity of providing dynamic and kinetics images of the administered radiopharmaceutical, reproducing its transport mechanism, action sites, receptor binding and excretion route. With the continues technological advances new radiopharmaceuticals have been developed in order to express higher specificity and with higher characters of affinity between receptor/complex. One radiopharmaceutical is formed by a reagent or bio molecule that has in its structure a radioisotope, that has the objectives of carrying it to the organs of affinity or to benign or malign tumoral process. Somatostatin inhibits the growing and proliferation of several tumoral cells. Somatostatin analogs bind to somatostatic receptors that are expressed in different kind of neoplasia DOTA-LANREOTIDE (DOTALAN) is an octapeptide analog to somatostatin. The interest of labeling the bio conjugate with gallium-67 in Nuclear Medicine comes from its physical, chemical ...
X-ray dosimetry of TlGaSe_2 single crystals
International Nuclear Information System (INIS)
TlGaSe_2 compound belongs to group of layered semiconductors of A"3B"3C_2"6-type. Photoelectric and optical properties of TlGaSe_2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe_2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe_2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K_#sigma# characterising X-ray sensitivity of investigated crystals are determined as the relative change of conductivity ...
Review of JT-60U experimental results from February to October, 1999
International Nuclear Information System (INIS)
In 1999, the plasma parameters of reversed shear (RS) plasmas had been extended in 1) DT-equivalent fusion power gain Q_D_T"e"q - 0.5 (n_D(0)#tau#_ET_i(0) - 4x10"2"0 m"-"3#centre dot#keV#centre dot#s) for 0.8 s and 2) full non-inductive current drive with 80% of the bootstrap current fraction. Physics of the internal transport barriers (ITBs) in RS plasmas, including the energy transport and the formation of ITB, were extensively studied. A nearly full current drive (92% non-inductively) was obtained with negative ion based neutral beam (NNB) injection (360 keV, 3.4 MW) in a high #beta#_p H-mode plasma (I_p=1.5 MA, B_T=3.7 T, q_9_5=4.2) with high plasma performance (#beta#_N=2.4 and H_8_9=2.56). Rise in the central electron temperature (T_e - 9 keV) resulted in the current drive efficiency #eta#_C_D of NNB reached 1.3x10"1"9 A/W/m"2, the highest for the neutral beam current drive. As for the H-mode plasmas, decrease in the pedestal ion ...
1994-06-01
Energy Technology Data Exchange (ETDEWEB)
A new generation of quasimonochromatic high-flux X-ray sources, based on the X-ray radiation produced through Compton scattering between an electron beam and a laser beam, is under development. One of the possible applications of this source is inline phase contrast mammography, based on the observation of the edge-enhancement effect that can be observed at the border of structures inside the breast in images produced using a partially or totally coherent X-ray beam. In this work we present the results of a set of simulations of inline phase contrast mammography using typical inverse Compton scattering sources parameters. The simulated sample was a tumour-like mass having spherical shape, diameter between 200 {mu}m and 5 mm, placed inside a breast-like matrix, 4 cm thick, and a standard composition of 50% glandular tissue and 50% adipose tissue. We discuss the minimum requirements for mammography using inverse Compton scattering sources and we discuss how the working parameters of the ...
2009-09-01
Energy Technology Data Exchange (ETDEWEB)
K{beta}-to-K{alpha} X-ray intensity ratios of Ti and Ni have been measured in pure metals and in alloys of Ti{sub x}Ni{sub 1-x} (x=0.7, 0.6, 0.5, 0.4 and 0.3) following excitation by 22.69 keV X-rays from a 10 mCi {sup 109}Cd radioactive point source. The valence-electron configurations of these metals were determined by corporation of measured K{beta}-to-K{alpha} X-ray intensity ratios with the results of multiconfiguration Dirac-Fock calculation for various valence-electron configurations. Valence-electron configurations of 3d-transition metals in alloys indicate significant differences with respect to the pure metals. Our analysis indicates that these differences arise from delocalization and/or charge transfer phenomena in alloys. Namely, the observed change of the valence-electron configurations of metals in alloys can be explained with the transfer of 3d electrons from one element to the other element and/or the rearrangement of electrons between 3d and 4s, ...
2010-06-15
Energy Technology Data Exchange (ETDEWEB)
K{beta}-to-K{alpha} X-ray intensity ratios of Ti, Cr, Fe and Co in pure metals and in Cr{sub 0.26}Fe{sub 0.74}, Cr{sub 0.80}Co{sub 0.20} and Ti{sub 0.80}Cr{sub 0.20} alloys have been measured following excitation by 59.54 keV {gamma}-rays from a 7400 MBq (200 mCi) {sup 241}Am point-source. The valence electronic structure of Ti, Cr, Fe and Co in the samples have been evaluated by the comparison of the measured K{beta}-to-K{alpha} intensity ratios with the results of multiconfiguration Dirac-Fock calculations performed for various electronic configurations of these metals. The 3d-electron populations obtained for pure metallic Ti, Cr, Fe and Co agree well with the results of band structure calculations of Papaconstantopoulos (Handbook of band structure of elemental solids, Plenum Press, New York, 1986). Our analysis indicates significant increase of 3d-electron population of Ti, Cr and Fe in the alloys with respect to the pure metals, except for Cr in Cr{sub ...
2002-10-01
International Nuclear Information System (INIS)
K#beta#-to-K#alpha# X-ray intensity ratios of Ti, Cr, Fe and Co in pure metals and in Cr_0_._2_6Fe_0_._7_4, Cr_0_._8_0Co_0_._2_0 and Ti_0_._8_0Cr_0_._2_0 alloys have been measured following excitation by 59.54 keV #gamma#-rays from a 7400 MBq (200 mCi) "2"4"1Am point-source. The valence electronic structure of Ti, Cr, Fe and Co in the samples have been evaluated by the comparison of the measured K#beta#-to-K#alpha# intensity ratios with the results of multiconfiguration Dirac-Fock calculations performed for various electronic configurations of these metals. The 3d-electron populations obtained for pure metallic Ti, Cr, Fe and Co agree well with the results of band structure calculations of Papaconstantopoulos (Handbook of band structure of elemental solids, Plenum Press, New York, 1986). Our analysis indicates significant increase of 3d-electron population of Ti, Cr and Fe in the alloys with respect to the pure metals, except for Cr in Cr_0_._2_6Fe_0_._7_4 where ...
2002-10-01
Understanding the peak asymmetry in alpha liquid scintillation with {beta}/{gamma} discrimination
Energy Technology Data Exchange (ETDEWEB)
The peak evaluation in alpha liquid scintillation is known to be easy, mostly due to the gaussian shape of the peaks. However, we often observed a high-energy tail in addition to a pure gaussian function. This effect is only detectable with a high resolution {alpha} liquid scintillation spectrometer such as the PERALS trademark system. Indeed, its intrinsic resolution (180 keV for a 4 MeV {alpha} particle) is better than that obtained for conventional LSC spectrometers. The peak asymmetry was quantified using the Fisher's coefficient {gamma}{sub 1} (symmetry factor). We show that the main effect responsible for the asymmetry is internal conversion. Indeed, most of the even-even nuclides have low {alpha} intensity transitions leading to excited levels of their daughter nuclides. The internal conversion is almost equal to 100% and consequently produces a sum peak at higher energy. No generalization is possible for odd-even nuclides, but the knowledge of ...
2000-07-01
International Nuclear Information System (INIS)
Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers with energies from 100eV to 1keV and doses from 3E14 to ...
2005-08-01
Transient enhanced diffusion from decaborane molecular ion implantation
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials ...
1998-10-01
Transient enhanced diffusion from decaborane molecular ion implantation
International Nuclear Information System (INIS)
Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become ...
1998-10-01
The gamma transition from the 55/22"+[402] state to the 77/22"+[404] state in "1"7"7Ta
International Nuclear Information System (INIS)
An experimental investigation of the 70.5 keV #gamma#-ray transition from the 55/22"+[402] state to the 77/22"+[404] ground state in "1"7"7Ta was made. The half-life and magnetic moment of the initial state were found to be 73+-5 ns and 4.7+-0.5 #mu#sub(N) respectively. The E2/M1 mixing ratio of the transition was determined to be -0.10+-0.04. The reduced transition probabilities, B(E2) and B(M1), were found to be 2.9+-2.3e"2.fm"4 and (1.1+-0.1)x10"-"4#mu#sub(N)"2, respectively, and the M1 penetration parameter was determined to be 6+-2. The Coriolis mixing amplitude of the 75/22"+[402] state in the 77/22"+[404] ground state was determined from the B(E2) value to be -0.011+-0.004. It was found that the experimental value of the Coriolis matrix element <5/2"+/j-/7/2"+>sub(exp) was one-tenth of that calculated using the Nilsson wave function. The coefficient k_2, introduced by Wahlborn et al., was re-analyzed using the present experimental results and found to ...
International Nuclear Information System (INIS)
Although low-energy ion radiation has been proven to have a wide range of biological effects and led to fruitful achievements as a new mutagenic source for genetic modification, there still exist some disputes about its mutagenic mechanisms because of its short-penetrating property. In present research, Arabidopsis thaliana transgenic for GUS recombination substrate was used to evaluate the genomic instability induced by irradiations of alpha particle (3.3MeV) and Low-energy-Argon ion (30 KeV). A pronounced effects of alpha particle irradiation to Arabidopsis thaliana seedlings and Argon ion irradiation to seeds on the somatic homologous recombination frequency (sHRF) were reported. The sHRFs increased 1.88-fold and 2.42-fold, respectively, which indicated that the short-penetrating radiation could effectively induce the plant genomic instability in either dry seeds or seedlings with active metabolism. The local alpha particle irradiation of root was performed. ...
2008-08-12
The characteristics of surface oxidation and corrosion resistance of nitrogen implanted zircaloy-4
International Nuclear Information System (INIS)
This work is concerned with the development and application of ion implantation techniques for improving the corrosion resistance of zircaloy-4. The corrosion resistance in nitrogen implanted zircaloy-4 under a 120 keV nitrogen ion beam at an ion dose of 3 x 10"1"7 cm"-"2 depends on the implantation temperature. The characteristics of surface oxidation and corrosion resistance were analyzed with the change of implantation temperature. It is shown that as implantation temperature rises from 100 to 724 C, the colour of specimen surface changes from its original colour to light yellow at 100 C, golden at 175 C, pink at 300 C, blue at 440 C and dark blue at 550 C. As the implantation temperature goes above 640 C, the colour of surface changes to light black, and the surface becomes a little rough. The corrosion resistance of zircaloy-4 implanted with nitrogen is sensitive to the implantation temperature. The pitting potential of specimens increases from 176 to 900 mV ...
The JT-60U 2.45 MeV neutron time-of-flight spectrometer
Energy Technology Data Exchange (ETDEWEB)
A 2.45 MeV neutron time-of-flight spectrometer was designed and built for measurements of neutron energy spectra from the JT-60U Tokamak. The spectrometer consists of two fast plastic scintillators (50 cm{sup 2} and 1800 cm{sup 2}, thickness: 2 cm) where each detector is located on two constant time-of-flight spheres. The time-of-flight spheres have radius of 1 m which gives a neutron flight length of {approx}164 cm and a time-of-flight of {approx}92 ns for 2.45 MeV source neutrons. The calculated spectrometer efficiency and resolution are 2.8 x 10{sup -2} cm{sup 2} and 105 keV (4.3%), respectively. The energy resolution corresponds to a time resolution of 2.0 ns. The spectrometer will measure neutrons in a vertical line-of-sight, {approx}9 m from the plasma center. For a total neutron emission of 10{sup 16} n/s, the countrate in the first scattering detector, located in the neutron beam, is estimated to {approx}2.5 MHz. The useful countrate for this case is ...
1999-11-01
Sub-0.1 #mu#m line fabrication by Focused ion beam and columnar structural Se-Ge resist
International Nuclear Information System (INIS)
As a method to enhance the sensitivity (S) of an inorganic resist for focused-ion-beam (FIB), lithography, sub-0.1 #mu#m patterning properties of a columnar structural #alpha#-Se_7_5Ge_2_5 resist have been investigated using 30 keV low-energy Ga"+-FIB exposure and CF_4 reactive-ion etching (RIE). development. The Se_7_5Ge_2_5 thin films were 60 .deg. and 80 .deg. -obliquely deposited on Si substrate and parts of the films were annealed for several minutes at the glass transition temperature (T_g=#approx#220 .deg. C). Columnar structures with the angles of approximately 40 .deg. and 65 .deg. are observed in 60 .deg. and 80 .deg. -obliquely deposited films, respectively, and they disappear after annealing. Despite the disappearance of the columnar structures, a critical decrease in thickness is not observed. For the FIB exposures with a beam diameter of #approx#0.1#mu#m and around the threshold dose, the negative-type fine patterns with linewidth of about ...
1998-11-01
Study of implantation damage in germanium formed using Ga"+ FIB
International Nuclear Information System (INIS)
Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ion dose of 3x10"1"3 ion/cm"2. High-resolution TEM showed a complex structure of the ...
Status of the WAND (Waste Assay for Nonradioactive Disposal) project as of July 1997
Energy Technology Data Exchange (ETDEWEB)
The WAND (Waste Assay for Nonradioactive Disposal) system can scan thought-to-be-clean, low-density waste (mostly paper and plastics) to determine whether the levels of any contaminant radioactivity are low enough to justify their disposal in normal public landfills or similar facilities. Such a screening would allow probably at least half of the large volume of low-density waste now buried at high cost in LANL`s Rad Waste Landfill (Area G at Technical Area 54) to be disposed of elsewhere at a much lower cost. The WAND System consists of a well-shielded bank of six 5-in.-diam. phoswich scintillation detectors; a mechanical conveyor system that carries a 12-in.-wide layer of either shredded material or packets of paper sheets beneath the bank of detectors; the electronics needed to process the outputs of the detectors; and a small computer to control the whole system and to perform the data analysis. WAND system minimum detectable activities (MDAs) for point sources range from ...
1998-03-01
Status of lead and bismuth for radioimmunoimaging and radioimmunotherapy
International Nuclear Information System (INIS)
Tumor-targeted monoclonal antibodies (mAb) might be useful as diagnostic or therapeutic agents when linked to cytotoxic or imaging reagents. Our group is working to test this hypothesis by linking cytocidal and image-producing isotopes to mAb and testing the utility of the radioimmunoconjugates formed in animal model systems. Radioiodines were first employed for these purposes,but unfavorable nuclear properties (half-lives, #gamma#-ray and #beta#-particle energies) and chemical reactivity (deiodination in vivo) limit their utility. Labeling immunoproteins with metallic radionuclides offers more versatility in that the selection of potentially useful radiometals spans the periodic table.Of the metallic radionuclides with physical properties most suited for use with mAb in nuclear medicine, few are more available or desirable than those of bismuth ("2"1"2Bi) and lead ("2"0"3Pb, "2"1"2Pb), as listed in Table 1. "2"1"2Bi or "2"1"2Pb could serve as sources for highly cytocidal ...
1990-08-26
Spectroscopy of /sup 87,88,89/Sr with (n,. gamma. ) and (d,p) reactions
Over the recent years the nuclear structure around the N = 50 shell closure, which is very pronounced in the strontium and zirconium isotopes, has been the subject of extensive experimental and theoretical work. On the proton side Z = 38 and Z = 40 provide fairly closed sub-shells. In the strontium isotopes the lg/sub 9/2/ neutron shell is closed at /sup 88/Sr, supplying relatively pure neutron-hole and neutron-particle states with large spectroscopic factors in /sup 87/Sr and /sup 89/Sr, as well as core-coupled states. The mass region is thus ideally suited to examine the transition from a correlated to an uncorrelated (chaotic.) excitational behavior. These two types are characterized e.g. by the density of excited states, the transition strengths, and the spectroscopic factors observed in transfer reactions. We conducted (n,..gamma..) and (d,p) reactions leading to /sup 87,88,89/Sr in addition to /sup 88/Sr(d,t)/sup 87/Sr and 24 keV neutron capture in /sup ...
1988-01-01
Spectroscopy of /sup 87,88,89/Sr with (n,#gamma#) and (d,p) reactions
International Nuclear Information System (INIS)
Over the recent years the nuclear structure around the N = 50 shell closure, which is very pronounced in the strontium and zirconium isotopes, has been the subject of extensive experimental and theoretical work. On the proton side Z = 38 and Z = 40 provide fairly closed sub-shells. In the strontium isotopes the lg/sub 9/2/ neutron shell is closed at "8"8Sr, supplying relatively pure neutron-hole and neutron-particle states with large spectroscopic factors in "8"7Sr and "8"9Sr, as well as core-coupled states. The mass region is thus ideally suited to examine the transition from a correlated to an uncorrelated (chaotic?) excitational behavior. These two types are characterized e.g. by the density of excited states, the transition strengths, and the spectroscopic factors observed in transfer reactions. We conducted (n,#gamma#) and (d,p) reactions leading to /sup 87,88,89/Sr in addition to "8"8Sr(d,t)"8"7Sr and 24 keV neutron capture in "8"8Sr. The vast amounts of data ...
1988-04-24
Energy Technology Data Exchange (ETDEWEB)
The studies of {sup 137}Cs and {sup 239+240}Pu distributions in surface seawater at South China Sea within the Exclusive Economic Zone (EEZ) of Peninsular Malaysia were carried out in June 2008. The analysis results will serve as additional information to the expanded baseline data for Malaysia's marine environment. Thirty locations from extended study area were identified in the EEZ from which large volumes of surface seawater samples were collected. Different co-precipitation techniques were employed to concentrate cesium and plutonium separately. A known amount of {sup 134}Cs and {sup 242}Pu tracers were used as yield determinant. The precipitate slurry was collected and oven dried at 60 {sup o}C for 1-2 days. Cesium precipitate was fine-ground and counted using gamma-ray spectrometry system at 661.62 keV, while plutonium was separated from other radionuclides using anion exchange, electrodeposited and counted using alpha spectrometry. The activity ...
2010-09-15
Si and Si/P implants in In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P
Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in InAlP is attributed to the DX level found in the Al-containing material. The reduction in sheet resistance ...
1996-06-01
Energy Technology Data Exchange (ETDEWEB)
Many thermoluminescent materials has been developed and used for photon personal dosimetry but no one has all desired characteristics alone. These characteristics include robustness, high sensitivity, energy photon independence, large range of photon energy detection, good reproducibility, small fading and simple glow curve with peaks above 150 deg C. Calcium Sulfate Dysprosium doped (CaSO{sub 4}:Dy) phosphor Thermoluminescent Dosimeter (TLD) has been used by many laboratories, mainly in Brazil and India. Another interesting phosphor is Calcium Fluoride (CaF{sub 2}). These phosphor advantages begin to be more required and its disadvantages have became more apparent, in a global market more and more competitive. These phosphors are used in environmental and area monitoring, once they present more sensibility than other phosphors, like LiF:Mg. Theirs mainly disadvantage is a strong energetic dependence response, which must be corrected for theirs application in the field, where photon ...
2006-07-01
SLAROM-UF: Ultra fine group cell calculation code for fast reactor
International Nuclear Information System (INIS)
A cell calculation code SLAROM-UF was developed to improve calculation accuracy of effective cross sections for various fast reactor types. SLAROM-UF has a capability to calculate effective cross sections in ultra fine groups of about 100,000 below 50keV and in fine groups above the energy (maximum 900 groups). Resonance interaction among the fuel, the coolant, and the structure materials can be treated accurately even in a heterogeneous cell structure. Temperature can be set up freely in a cell by the ultra fine group calculation. Improvement in nuclear characteristics was observed in the analysis of JUPITER critical experiment, as 0.1% for criticality, 4% for sodium void reactivity, several % for radial reaction rate distribution, when SLAROM-UF was used instead of the typical cell calculation code. The effect of the ultra fine group calculation is remarkable in the non-leakage term of sodium void reactivity, and that of the fine group calculation is in the case ...
Reevaluation of 58Ni and 60Ni Resonance Parameters in the Energy Range Thermal to 800 keV
Energy Technology Data Exchange (ETDEWEB)
The previous 58Ni and 60Ni set of resonance parameters (ENDF/B-VII-0, JEFF-3, etc.) was based on the SAMMY analysis of Oak Ridge National Laboratory neutron transmission, scattering cross section and capture cross section measurements by C. M. Perey et al. The present results were obtained by adding to the SAMMY experimental data base the capture cross sections measured recently at the Oak Ridge Linear Electron Accelerator by Guber et al. and the Geel Electron Linear Accelerator very high-resolution neutron transmission measurements performed by Brusegan et al. A complete resonance parameter covariance matrix (RPCM) was obtained from the SAMMY analysis of the experimental database. The data sets were made consistent, when needed, by adjusting the neutron energy scales, the normalization coefficients, and the background corrections. The RPCM allows the calculation of the cross section uncertainties due mainly to statistical errors in the experimental data. The systematic uncertainties ...
2009-09-01
Energy Technology Data Exchange (ETDEWEB)
The previous {sup 58}Ni and {sup 60}Ni set of resonance parameters (Endf/B7.O, Jeff-3, etc.) was based on the SAMMY analysis of Oak Ridge National Laboratory neutron transmission, scattering cross section and capture cross section measurements by C.M. Perey et al. The present results were obtained by adding to the SAMMY experimental database the capture cross sections measured recently at the Oak Ridge Linear Electron Accelerator by Guber et al. and the Geel Electron Linear Accelerator and very high-resolution neutron transmission measurements performed by Brusegan et al. A complete resonance parameter covariance matrix (RPCM) was obtained from the SAMMY analysis of the experimental database. The data sets were made consistent, when needed, by adjusting the neutron energy scales, the normalization coefficients, and the background corrections. The RPCM allows the calculation of the cross section uncertainties due mainly to statistical errors in the experimental data. The systematic ...
2009-07-01
Energy Technology Data Exchange (ETDEWEB)
Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N compositions as a controlled buffer at the interface. Significant relaxation of the film stress has been observed ...
1999-09-01
Preliminary study of metabolic radiotherapy with {sup 188}Re via small animal imaging
Energy Technology Data Exchange (ETDEWEB)
{sup 188}Re is a {beta}{sup -} (Emax=2.12 MeV) and {gamma} (155 keV) emitter. Since its chemistry is similar to that of the largely employed tracer, {sup 99m}Tc, molecules of hyaluronic acid (HA) have been labelled with {sup 188}Re to produce a target specific radiopharmaceutical. The radiolabeled compound, i.v. injected in healthy mice, is able to accumulate into the liver after a few minutes. To study the effect of metabolic radiotherapy in mice, we have built a small gamma camera based on a matrix of YAP:Ce crystals, with 0.6x0.6x10 mm{sup 3} pixels, read out by a R2486 Hamamatsu PSPMT. A high-sensitivity 20 mm thick lead parallel-hole collimator, with hole diameter 1.5 mm and septa of 0.18 mm, is placed in front of the YAP matrix. Preliminary results obtained with various phantoms containing a solution of {sup 188}Re and with C57 black mice injected with the {sup 188}Re-HA solution are presented. To increase the space resolution and to obtain two orthogonal ...
2006-01-15
Plasma-based ion implantation and deposition: A review of physics,technology, and applications
Energy Technology Data Exchange (ETDEWEB)
After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. ...
2005-05-16
Particle emission from low energy nuclear reactions in solids. Preliminary results
Energy Technology Data Exchange (ETDEWEB)
TiH{sub 2} and TiD{sub 2} thick targets were bombarded with 100 to 200 keV protons or deuterons. Evidence for nuclear reactions was obtained by means of a surface barrier particle detector. Deuteron irradiation of TiD{sub 2} produced these observations: copious {approx}2.5 MeV neutrons and {approx}3 MeV protons from direct D-D reactions; gamma rays from p,{gamma} and n,{gamma} reactions; {approx}14 MeV protons from the secondary d({sup 3}He, p){alpha} reaction; and a signal between {approx}6-12 MeV that Kasagi et al. has tentatively identified as protons from the fusion of three deuterium nuclei. However, this signal has in it a strong interference signal from either neutrons or gamma rays that directly deposit energy in the detector. This interference spectra was measured by placing a thick absorber in front of the detector that stops up to 20 MeV protons, but not gamma rays or neutrons. More experiments must be done before we can confirm or deny the existence in ...
2000-07-01
PROBING THE ORIGINS OF THE C IV AND Fe K? BALDWIN EFFECTS
International Nuclear Information System (INIS)
We use UV/optical and X-ray observations of 272 radio-quiet Type 1 active galactic nuclei and quasars to investigate the C IV Baldwin Effect (BEff). The UV/optical spectra are drawn from the Hubble Space Telescope, International Ultraviolet Explorer and Sloan Digital Sky Survey archives. The X-ray spectra are from the Chandra and XMM-Newton archives. We apply correlation and partial-correlation analyses to the equivalent widths (EWs), continuum monochromatic luminosities, and ?ox, which characterizes the relative X-ray to UV brightness. The EW of the C IV ?1549 emission line is correlated with both ?ox and luminosity. We find that by regressing l?(2500 A) with EW(C IV) and ?ox, we can obtain tighter correlations than by regressing l?(2500 A) with only EW(C IV). Both correlation and regression analyses imply that l?(2500 A) is not the only factor controlling the changes of EW(C IV); ?ox (or, equivalently, the soft X-ray emission) plays a fundamental role in the formation and variation ...
2009-09-01
Optical image storage in ion implanted PLZT ceramics
International Nuclear Information System (INIS)
We have demonstrated that optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-UV light with photon energies greater than the band gap energy of approx. equal to 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform UV illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of >= 100:1 and spatial resolution of approx. equal to 10 #mu#m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. equal to 100 mJ/cm"2) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. We have recently found from studies of H, He and Ar implanted PLZT that the photosensitivity can ...
On Boron Diffusion in MgF{sub 2}
The MgF{sub 2} monocrystals were irradiated at room temperature with 390 keV B{sup +} ions up to the fluence of 10{sup 16} cm{sup -2}. The irradiated samples were (isochronally and isothermally) annealed in high vacuum at the temperatures 200 deg. C, 300 deg. C, 400 deg. C, 500 deg. C, 600 deg. C and 700 deg. C for the times ranging from 2-100 hours. After each annealing step, the boron depth distribution was determined using the neutron depth profiling technique. As implanted, the depth distributions of boron exhibited standard Gaussian-like forms, but the evaluated profile parameters, R{sub P} = 960 nm and {delta}R{sub P} = 140 nm, were higher than those calculated using the SRIM code (R{sub P} = 870 nm and {delta}R{sub P} = 115 nm). Annealing at temperatures up to 400 deg. C did not change the depth profiles. Annealing at 600 deg. C, however, led to a one-way gradual transfer of the boron atoms from the site of implantation towards the sample surface, and in ...
2009-03-10
International Nuclear Information System (INIS)
The authors report on observations of plasma wave turbulence generated during electron beam injections, spacecraft potential variations, and neutral gas emissions of the CHARGE 2 sounding rocket experiment. The payload was flown in a mother/daughter configuration, with the two sub-payloads electrically connected by an insulated, conducting tether. While tethered, the two platforms were separated, drifting apart in a direction perpendicular to both the magnetic field and to the spacecraft velocity, reaching a maximum distance of 426 m at the end of the flight. The mother carried a high-voltage (HV) system (0-460 V), biasing the mother negative relative to the daughter. The operation of the HV bias system simulated the motional emf induced in larger orbiting space structures like the Tethered Satellite System 1 (TSS 1) space shuttle mission scheduled for the spring of 1992. In addition, the mother carried an electron beam accelerator (1 keV, 0-46 mA). The daughter ...
Nuclear radiation detectors on II-VI compounds
International Nuclear Information System (INIS)
Nuclear radiation detectors in integral execution were produced by successive epitaxial growth from vapor phase of Zn Te and Cd Se thin layers onto scintillating Zn Se (Te) crystals. The irradiation of combined Zn Se (Te) - Zn Te - Cd Se detectors by Cu_K_a X-rays leads to the appearance of photoreceiver e.m.f., which tends to saturation with the increase of X-ray radiation dose reaching the value of 0.34-0.40 V at 200 R/min. The short circuit current dependence of irradiation dose power is linear. The matching factor for detectors with Zn Te-Cd Se photoreceivers with different doping levels is 0.68-0.92. The absolute monochromatic sensitivity is 0.32-0.35 m A/m W at a quantum efficiency 0.58-0.61 and a time constant 2 x 10"-"4 s. The calculated dose sensitivity for Zn Se(Te)-Zn Te-Cd Se combined detectors at the irradiation with X-rays having effective energy 8.86 keV gives the value 3.9 x 10"-"7 A/cm"2 (R/min); the experimental value of dose sensitivity reaches ...
1993-10-13
Modification of the passivity of iron based alloys through ion implantation
International Nuclear Information System (INIS)
As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 stainless. Electrochemical experiments were carried out to evaluate the effects of phosphorus and boron on ...
1764-01-01
Measurement of K x-ray intensity ratio of tin, gadolinium and dysprosium
International Nuclear Information System (INIS)
Full text: Measurement of K_#beta# to K_#alpha# x-ray intensity ratios are important not only in the field of atomic physics, radiation physics and medical physics, but also to test the validity of assumptions made in the theoretical prediction. The intensity ratios can also give information on the effect of physical and chemical environment of the element in the compound. Many investigators have adopted a single and double reflection geometries to measure the K_#beta# to K_#alpha# x ray intensity ratios to understand the effect of physical and chemical environment on x-ray fluorescence. The targets are excited by a radioactive source of having activity of the order 100 MBq. in order to carry out accurate measurement K_#beta# to K_#alpha# x-ray intensity ratios, we have develop 2#pi# geometrical configuration method : placing a target right on the surface of the detector facing the target to measure the K shell fluorescence parameters such as fluorescence yield, fluorescence cross ...
2003-11-01
International Nuclear Information System (INIS)
K#beta#-to-K#alpha# x-ray intensity ratios of Fe and Ni in pure metals and in Fe_xNi_1_-_x alloys (x=0.20, 0.50, 0.58) exhibiting similar crystalline structure have been measured following excitation by 59.54 keV #gamma# rays from a 200 mCi "2"4"1Am point source to understand why the properties of the Fe_xNi_1_-_x (x=0.2) alloy are distinct from other alloy compositions. The valence electronic structure of Fe and Ni in the samples has been evaluated by comparing the measured K#beta#-to-K#alpha# intensity ratios with the results of multiconfiguration Dirac-Fock calculations. Significant changes in the 3d electron population (with respect to the pure metal) are observed for Fe and Ni for certain alloy compositions. These changes can be explained by assuming rearrangement of electrons between 3d and (4s,4p) band states of the individual metal atoms. It has been found that the valence electronic structure of the Fe_0_._2Ni_0_._8 alloy is totally different from the ...
2001-02-15
International Nuclear Information System (INIS)
The aim of this work is to investigate the acoustic wave generation by pulsed and periodically modulated ion beams in different solid materials depending on the beam parameters and to demonstrate the possibility to apply an intensity modulated focused ion beam (FIB) for acoustic emission and for nondestructive investigation of the internal structure of materials on a microscopic scale. The combination of a FIB and an ultrasound microscope in one device can provide the opportunity of nondestructive investigation, production and modification of micro- and nanostructures simultaneously. This work consists of the two main experimental parts. In the first part the process of elastic wave generation during the irradiation of metallic samples by a pulsed beam of energetic ions was investigated in an energy range from 1.5 to 10 MeV and pulse durations of 0.5-5 #mu#s, applying ions with different masses, e.g. oxygen, silicon and gold, in charge states from 1"+ to 4"+. The acoustic amplitude ...
Initiation of ecton processes by interaction of a plasma with a microprotrusion on a metal surface
International Nuclear Information System (INIS)
Evolution of rapid (?10 ns) Ohmic overheating of a microprotrusion on a surface in contact with a plasma by emission current is studied taking into account the energy carried by plasma ions and electrons, as well as Ohmic heating, emissive source of energy release (Nottingham effect), and heat removal due to heat conduction. Plasma parameters were considered in the range of n = 1014-1020 cm-3 and Te = 0.1 eV-10 keV. The threshold value of energy transferred to the surface from the plasma is found to be 200 MW/cm2; above this value, heating becomes explosive (namely, an increase in the temperature growth rate (?2T/?t2 > 0) and in passing current (?J/?t > 0) is observed in the final stage at T ? 104 K and j ? 108 A/cm2). In spite of the fact that Ohmic heating does not play any significant role for plasmas with a density lower than 10 18 cm-3 because the current is limited by the space charge of electrons, rapid overheating of top of microprotrusion is observed ...
2008-12-01
In situ texture analysis under applied load
International Nuclear Information System (INIS)
The in-situ measurement of a crystallographic texture is a special type of a non-destructive measurement, which need special equipments. Due to the high photon flux and the excellent brilliance high energetic synchrotron radiations are a fantastic tool particular in fast experimentation. Moreover, a high penetration power allows the investigation of standard tensile sample of the DIN-norm. A loading device with a power up to 20 kN was installed at the hard wiggler beamline BW5 (HASYLAB-DESY) to perform in-situ strain and in-situ texture analysis. Using 100keV X-rays one gets short wavelength so that a 2D image-plate detector offers a wide range of diffraction pattern within the first 10 degree in 2 theta. Thermal neutron is another radiation with a high penetration power, which is the standard method for global texture analysis of bulk samples. As an example rectangular extruded Mg- Az31 was investigated by an in-situ. tensile experiment. Samples with 0 degree, 45 ...
Impurity and clustering effects on defect evolution in ion-implanted Si
Energy Technology Data Exchange (ETDEWEB)
A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess directly resulting from the extra implanted ion is shown to dominate the residual ...
1998-10-01
Importance of neutron data in fission reactor applications
International Nuclear Information System (INIS)
The neutron data required to completely analyze fission reactors includes many isotopes and covers a broad energy range. In both fast and thermal reactors, the neutron inventory is a fine balance determined by the fission properties of "2"3"5U, "2"3"9Pu and "2"3"8U and by the capture cross sections of "2"3"8U, fuel materials, structural materials and coolant materials. In fast reactors, the spectrum of neutrons ranges from 1 keV to 3 MeV and is influenced by the elastic and inelastic scattering properties of "2"3"8U and the structural and coolant materials. For neutron shielding applications, the important neutron data include the total cross sections of structural and coolant materials in the MeV range. The impact of these basic nuclear data in fission reactor applications is most suitably described by sensitivity analysis. For example, sensitivity coefficients computed for a typical large plutonium fueled fast reactor indicate that a percent increase in the ...
1976-07-06
Focused ion beam damage to MOS integrated circuits
Energy Technology Data Exchange (ETDEWEB)
Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired ...
2000-05-10
FABRICATION OF BISMUTH NANOWIRE DEVICES USING FOCUSED ION BEAM MILLING
International Nuclear Information System (INIS)
In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO_2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were ...
2009-07-23
Extension of improved particle and energy confinement regime in the core of LHD plasma
International Nuclear Information System (INIS)
Recent two major topics of Large Helical Device (LHD) towards fusion relevant conditions, high-density operation and high-ion-temperature operation, are reported. Super dense core plasma was obtained by the combination of repetitive hydrogen ice pellet injection and high power neutral beam injection (NBI) heating. A very peaked density profile with the highest central density of 1.1x1021 m-3 was produced showing that the particle transport was suppressed very well in the plasma core. The spatial density varies as the position of magnetic axis (Rax), and the steepest profile is obtained at Rax=3.95 m. The highest central ion temperature of 5.6 keV was obtained in hydrogen plasma at electron density of 1.6 x 1019 m-3 by NBI, where a peaked ion-temperature profile with internal ion energy transport barrier was observed. The profile of electron temperature did not change much and was broad even when the ion temperature had a peaked profile. The central ion temperature ...
2009-06-01
Enhancement of electrical conductivity of ion-implanted polymer films
Energy Technology Data Exchange (ETDEWEB)
The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21/sup 0/C +/- 1/sup 0/C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F/sup +/, Ar/sup +/, or As/sup +/ ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10/sup 18/ to 1 x 10/sup 20/ ions/m/sup 2/. The conductivity of films implanted with As/sup +/ was approximately one order greater than those implanted with Ar/sup +/, which in turn was approximately one-half order greater than those implanted with F/sup +/. The conductivity of the most conductive film approx.1 S/m) was almost 14 orders of magnitude greater than the pristine PET film. Except for the three PET samples implanted at ...
1985-01-01
International Nuclear Information System (INIS)
The concentration of trace elements in brain sections was measured by synchrotron radiation X-ray fluorescence. The relative concentration was calculated by means of the normalization of Compton scattering intensity approximately 22 keV, after the normalization for collecting time of X-ray spectrum and the counting of the ion chamber, and subtracting the contribution of the polycarbonate film for supporting sample. Furthermore, the statistical evaluation of the element distribution in various regions of the brain sections of the 20-day-old rats was tested. For investigating the distribution of elements in the brain of iodine deficient rats, Wistar rats were fed with iodine deficient diet and deionized water (ID group). The rats were fed the same iodine deficient diet, but drank KIO_3 solution as control (CT group). The results showed that the contents of calcium (Ca) in thalamus (TH) and copper (Cu) and iron (Fe) in cerebral cortex (CX) of ID rats were ...
2004-02-27
Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case ...
2002-01-01
Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si
International Nuclear Information System (INIS)
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO_2 cover film, amount of dose decreases with the ...
2002-01-01
International Nuclear Information System (INIS)
Effects of helium and hydrogen production on irradiation hardening of martensitic steel F82H (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) were examined by dual or triple beam experiments. The effects of tempering and cold working were also examined. The irradiations were performed at about 500degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The value of appm-He/dpa for the dual ion beams was about 15, and the values of appm-He/dpa and appm-H/dpa for the triple ion beams were 15 and 15 (or 150), respectively. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. Irradiation softening and hardening was observed in F82H-std, F82H+20%CW and a non-tempered F82H steels irradiated at about 500degC to 18 and 50 dpa, respectively, by dual ion beams. The hardness of the specimens irradiated at about 500degC to 18 dpa under triple ion beams was ...
2007-06-01
International Nuclear Information System (INIS)
Effect of helium and hydrogen production on radiation-hardening of F82H irradiated by dual or triple beam condition were investigated. The specimens used were four types of ferritic martensitic steels of F82H-std (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) steels tempered at 750degC for 60 minutes, 20% cold worked F82H steel, F82H tempered for 10 minutes and non-tempered F82H steels. The irradiation was performed at 450degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The ratios of He (appm)/dpa and H(appm)/dpa were 15 nad 15 (or 150) for dual and triple ion beams. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. The hardness in these F82H steels irradiated at 450degC to 18 dpa under triple beam irradiation was harder than that under dual beam irradiation. Irradiation softening and hardening under dual beams was observed in F82H ...
2003-03-01
Development of a high-current microwave ion source for proton linac application systems
International Nuclear Information System (INIS)
A microwave hydrogen ion source was developed to improve reliability, and to increase operation time of proton linac application systems. The ion source needs no filament in the discharge chamber, which leads to better reliability and less maintenance time. The developed source produced a maximum hydrogen ion beam current of 70 mA (high current density of 360 mA/cm2, beam energy of 30 keV) with a 5 mm diam extraction aperture and 1.2 kW microwave power. The proton fraction was increased with an increase in rf power and reached around 90% at 1 kW. Measured 90% beam normalized emittance was 0.4 #pi# mm mrad. Rise times of rf power and beam current to 90% of the final values were about 30 and 35 #mu#s, respectively, at a pulse operation mode with 400 #mu#s pulse width and 100 Hz repetition rate. The dynamic range of beam currents was enlarged (3-63 mA) in the pulse mode with a modified rf wave form to assist ignition of microwave discharge. These performance ...
2004-05-01
Construction, testing of the 1 MW, 130-260 GHz Fusion-FEM
Energy Technology Data Exchange (ETDEWEB)
During the previous 9 months the major part of the Fusion-FEM has been constructed. The 2 MV Insulated Core Transformer, the electron gun, the accelerator, the focusing lenses and the undulator have been tested on-site. In the present - temporary - set-up, the electron beam line consists of a 12 A, 80 keV thermionic electron gun, a 2 MeV dc accelerator, beam transport optics, the undulator and a collector. The gun is mounted in the high voltage terminal, which is now at -2 MV, and the undulator and mm-wave system am at ground potential outside the SF{sub 6}-filled pressure tank. This so-called inverse set-up allows easy access to the larger part of the beam line, the undulator and the mm-wave system, which is important in the conditioning phase. The decelerator and depressed collector am not yet installed. The design of the electron beam line has been optimised using the GPS particle-tracking code and the TOSCA code. The TOSCA code is used for accurate field ...
1995-12-31
Energy Technology Data Exchange (ETDEWEB)
The object and the purpose of the present work was to develop, to assemble and to start running a new TOF (time of flight) mass spectrometer for imaging SNMS analytic which is optimized for the analysis of highly molecular secondary ions. The most important purpose was the characterization of the TOF mass spectrometer. The obtained mass spectra of indium, tantalum and silver clusters reflect the excellent properties of the TOF mass spectrometer for the detection of large clusters with good detection efficiency up to masses of 16000 amu. The possibility of the deflection of selected saturated atom and cluster peaks serves for further improvement of the detection efficiency for large molecules. The accessible mass resolution was determined to be of the order of m/{delta}m=1000 in the high mass region. Numerous measurements were carried out to characterize the useful yield of this spectrometer. For a best possible adaptation of the TOF mass spectrometer for the detection of highly ...
2006-12-21
Central engine of quasars and AGNs: a relativistic proton radiative shock
International Nuclear Information System (INIS)
Active galactic nuclei (AGNs) and quasars (QSOs) appear to emit roughly equal energy per decade from radio to gamma-ray energies (e.g. Ramaty and Ligenfelter 1982). This argues strongly for a nonthermal radiation mechanism (see Rees 1984). In addition, statistical studies have indicated that the spectra of these objects in the IR-UV and 2 to 50 keV x-ray band, can be fitted very well with power laws of specific indices. These spectral indices do not seem to depend on the luminosity or morphology of the objects (Rothschild et al. 1983; Malkan 1984), and any theory should account for them in a basic and model independent way. If shocks accelerate relativistic protons via the first-order Fermi mechanism (e.g. Axfor 1981), the radiating electrons can be produced as secondaries throughout the source by proton-proton (p-p) collisions and pion decay, thus eliminating Compton losses (Protheroe and Kazanas 1983). As shown by Kazanas (1984), if relativistic electrons are ...
1985-08-01
Energy Technology Data Exchange (ETDEWEB)
The importance of cellular dosimetry in both diagnostic and therapeutic nuclear medicine is becoming increasingly recognized. Experimental range-energy relations for electrons and alpha particles, along with derived geometric reduction factors, are used to calculate cellular absorbed fractions for these radiations. The resulting absorbed fractions are employed to calculate cellular S-values for several radionuclides. Cellular absorbed fractions for monoenergetic electron sources with energies ranging from 0.1 keV to 1 MeV, distributed uniformly in the source region, are calculated for several target {l_arrow} source combinations including cell{l_arrow}cell, cell{l_arrow}cell surface, nucleus{l_arrow}nucleus, nucleus {l_arrow}cytoplasm and nucleus {l_arrow}cell surface. Similar data are also provided for monoenergetic alpha particle sources with energies ranging from 3 to 10 MeV. S-values are also conveniently tabulated for {sup 32}P, {sup 35}S, {sup 86}Rb, {sup ...
1994-02-01
Energy Technology Data Exchange (ETDEWEB)
The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is evident in the LT specimen while just the ...
2007-08-15
International Nuclear Information System (INIS)
This paper introduces the JNM Special Issue on the development of a first wall for the reaction chamber in a laser fusion power plant. In this approach to fusion energy a spherical target is injected into a large chamber and heated to fusion burn by an array of lasers. The target emissions are absorbed by the wall and encapsulating blanket, and the resulting heat converted into electricity. The bulk of the energy deposited in the first wall is in the form of X-rays (1.0-100 keV) and ions (0.1-4 MeV). In order to have a practical power plant, the first wall must be resistant to these emissions and suffer virtually no erosion on each shot. A wall candidate based on tungsten armor bonded to a low activation ferritic steel substrate has been chosen as the initial system to be studied. The choice was based on the vast experience with these materials in a nuclear environment and the ability to address most of the key remaining issues with existing facilities. This ...
2005-12-15
An X-ray source population study of the Andromeda galaxy M 31
XMM-Newton EPIC observations reveal the population of X-ray sources of the bright Local Group spiral galaxy M 31, a low-star-formation-rate galaxy like the Milky Way, down to a 0.2-4.5 keV luminosity of 4.4E34 erg/s. With the help of X-ray hardness ratios and optical and radio information different source classes can be distinguished. The survey detected 856 sources in an area of 1.24 square degrees. Sources within M 31 are 44 supernova remnants (SNR) and candidates, 18 super-soft sources (SSS), 16 X-ray binaries (XRBs) and candidates, as well as 37 globular cluster sources (GlC) and candidates, i.e. most likely low mass XRBs within the GlC. 567 hard sources may either be XRBs or Crab-like SNRs in M 31 or background AGN. 22 sources are new SNR candidates in M 31 based on X-ray selection criteria. Time variability information can be used to improve the source classification. Two GlC sources show type I X-ray bursts as known from Galactic neutron star low mass XRBs. ...
2005-01-01
ANALYSIS OF ACCELERATOR BASED NEUTRON SPECTRA FOR BNCT USING PROTON RECOIL SPECTROSCOPY
Energy Technology Data Exchange (ETDEWEB)
Boron Neutron Capture Therapy (BNCT) is a promising binary treatment modality for high-grade primary brain tumors (glioblastoma multiforme, GM) and other cancers. BNCT employs a boron-10 containing compound that preferentially accumulates in the cancer cells in the brain. Upon neutron capture by {sup 10}B energetic alpha particles and triton released at the absorption site kill the cancer cell. In order to gain penetration depth in the brain Fairchild proposed, for this purpose, the use of energetic epithermal neutrons at about 10 keV. Phase I/II clinical trials of BNCT for GM are underway at the Brookhaven Medical Research Reactor (BMRR) and at the MIT Reactor, using these nuclear reactors as the source for epithermal neutrons. In light of the limitations of new reactor installations, e.g. cost, safety and licensing, and limited capability for modulating the reactor based neutron beam energy spectra alternative neutron sources are being contemplated for wider ...
1998-11-06
A spatial sensitivity analysis technique for neutron and gamma-ray measurements
International Nuclear Information System (INIS)
In the fields of medical imaging, geophysical well logging, and industrial radiography, it is often of interest to characterize the spatially distributed sensitivities of neutron and gamma-ray measurement devices to the physical properties of the materials being examined. For instance, one may wish to know how the count rate in a detector varies in response to small changes in the local density of the irradiated object as a function of position. Experimental determination of such sensitivity functions is often impractical. Consequently, we have developed a general three-dimensional Monte Carlo numerical technique that allows us to directly compute the differential sensitivity of an arbitrary integral response parameter, such as a time- or energy-discriminated count rate, with respect to the spatial distribution of macroscopic cross sections and sources in the irradiated medium. Sensitivities to object density, porosity, etc., can easily be derived from these computed fundamental ...
1992-09-08
A revised dosimetric model of the adult head and brain
Energy Technology Data Exchange (ETDEWEB)
During the last decade, new radiopharmaceutical have been introduced for brain imaging. The marked differences of these tracers in tissue specificity within the brain and their increasing use for diagnostic studies support the need for a more anthropomorphic model of the human brain and head. Brain and head models developed in the past have been only simplistic representations of this anatomic region. For example, the brain within the phantom of MIRD Pamphlet No. 5 Revised is modeled simply as a single ellipsoid of tissue With no differentiation of its internal structures. To address this need, the MIRD Committee established a Task Group in 1992 to construct a more detailed brain model to include the cerebral cortex, the white matter, the cerebellum, the thalamus, the caudate nucleus, the lentiform nucleus, the cerebral spinal fluid, the lateral ventricles, and the third ventricle. This brain model has been included within a slightly modified version of the head model developed by ...
1996-06-01
A revised dosimetric model of the adult head and brain
International Nuclear Information System (INIS)
During the last decade, new radiopharmaceutical have been introduced for brain imaging. The marked differences of these tracers in tissue specificity within the brain and their increasing use for diagnostic studies support the need for a more anthropomorphic model of the human brain and head. Brain and head models developed in the past have been only simplistic representations of this anatomic region. For example, the brain within the phantom of MIRD Pamphlet No. 5 Revised is modeled simply as a single ellipsoid of tissue With no differentiation of its internal structures. To address this need, the MIRD Committee established a Task Group in 1992 to construct a more detailed brain model to include the cerebral cortex, the white matter, the cerebellum, the thalamus, the caudate nucleus, the lentiform nucleus, the cerebral spinal fluid, the lateral ventricles, and the third ventricle. This brain model has been included within a slightly modified version of the head model developed by ...
1996-07-21
Energy Technology Data Exchange (ETDEWEB)
Full text of publication follows: Large-scale problems such as nuclear waste disposal are increasingly recognized to be interconnected to small scale-mechanisms. Thus, synchrotron-based high-resolution analytical X-ray probes become important tools for exploring the micro-scale chemical reactivity of heterogeneous barrier materials used in nuclear waste repositories. In this study the layout of the micro-XAS beamline at the Swiss Light Source (SLS) will be presented. The beamline is optimized towards micro beam experiments ({approx}1 x 1 {mu}m{sup 2}) in the hard-X-ray regime (4 - {approx}22 keV) and allows to combine micro X-ray fluorescence (micro-XRF), micro X-ray absorption spectroscopy (micro- XAS), and micro X-ray diffraction (micro-XRD) investigations with radioactive samples. Furthermore, the potential of micro-XRF/XAS/XRD for acquiring spatially resolved molecular level information on the speciation and structural coordination environment of radionuclides ...
2005-07-01
X-dosimetry of Tl(InS_2)_1_-_x(FeSe_2)_x single crystals
International Nuclear Information System (INIS)
Tl(InS_2)_1_-_x(FeSe_2)_x single crystals (where x=0; 0.001; 0.005; 0.01 and 0.015) were grown by the Bridgman-Stockbarger method. Obtained single crystals were crystallized in monoclinic structure. The present paper deals with experimental results relative to X-ray dosimetric characteristics of the Tl(InS_2)_1_-_x(FeSe_2)_x solid solutions at 300 K. Installation URS-55a was the source of radiation. X-ray radiation dose (E) falling on the crystals is measured by the crystalline X-ray dosimeter DRGZ-02. The value of X-ray conductivity coefficient K_#sigma# characterising X-ray sensitivity is defined as K_#sigma#= (#sigma#_E-#sigma#_0)/E#sigma#_0. where #sigma#_E is conductivity under the effect of X-ray radiation by intensity E, #sigma#_0 is conductivity in the lack of radiation. Comparing X-ray dosimetric characteristics of TlInS_2 and Tl(InS_2)_1_-_x(FeSe_2)_x crystals notes that because of partial substitution of [InS_2]- anion radical by [FeSe_2] there have been distinct increase of ...
2003-09-15
Study of silicon damage caused by ultra-low energy boron implantation
International Nuclear Information System (INIS)
Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross section transmission microscopy (XTEM) as well as TRIM simulation are briefly ...
Reduced boron diffusion under interstitial injection in fluorine implanted silicon
International Nuclear Information System (INIS)
Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the range of the fluorine implant and the density of dislocation ...
2007-12-01
Energy Technology Data Exchange (ETDEWEB)
Producing nuclear energy in order to reduce anthropic CO{sub 2} emission and to meet high energy demand, implies three conditions to the nuclear plants of the IV. generation: safety improvements, radioactive waste minimization, and fuel breeding for a sustainable use of the resources. The Thorium fuel cycle used in Molten Salt Reactors seems promising. Many numerical studies based on probabilistic codes are carried out in order to analyse the behaviour of such reactors. Nevertheless, one of the most important parameters is badly known: the alpha ratio of {sup 233}U, ratio of the neutron capture cross section to fission one for {sup 233}U. This key-parameter is necessary to calculate the breeding ratio and thus, the deployment capacities of those reactors. This Ph-D thesis was intended to prepare a precise measurement of the alpha ratio of {sup 233}U between 1 eV and 10 keV. Preliminary measurements have been performed on the experimental platform PEREN. This ...
2007-12-15
Pre-Flight Development of the PoGOLite Pathfinder
International Nuclear Information System (INIS)
The Polarized Gamma-ray Observer (PoGOLite) is a balloon-borne instrument that will measure gamma-ray polarization in the energy range 25-80 keV from astronomical sources such as pulsars, accretion discs and jets from active galactic nuclei. The two additional parameters provided by such observations, polarization angle and degree, will allow these objects to be studied in a new way, providing information about their emission mechanisms and geometries. The instrument measures azimuthal scattering angles of photons within a close packed array of phoswich detector cells (PDCs) based on coincident detection of Compton scattering and photoelectric absorption. Each PDC comprises three different scintillating components and combines photon detection, active collimation and bottom anticoincidence into one single unit. The three parts are viewed by a photomultiplier tube (PMT) and pulse shape discrimination is used to identify signals from dierent parts. Surrounding the ...
Energy Technology Data Exchange (ETDEWEB)
Studies of naturally occurring radioactive materials (NORM) distribution of {sup 226}Ra, {sup 228}Ra and {sup 40}K in East Malaysia were carried out as part of a marine coastal environment project. The results of measurements will serve as baseline data and background reference level for Malaysia coastlines. Sediments from 21 coastal locations and 10 near shore locations were collected for analyses. The samples were dried, finely ground, sealed in a container and stored for a minimum of 30 days to establish secular equilibrium between {sup 226}Ra and {sup 228}Ra and their respective radioactive progenies. They were counted using a high-purity germanium (HPGe) spectrometer covering the respective progeny energy peak. For {sup 40}K, the presence of this was measured directly via its 1460 keV energy peak. The concentration of {sup 226}Ra, {sup 228}Ra and {sup 40}K in samples obtained from coastal Sarawak ranged between 23 and 41 (mean 30{+-}2) Bq/kg, 27 and 45 (mean ...
2009-04-15
Direct Comparison of the X-Ray Emission and Absorption of Cerium Oxide
Energy Technology Data Exchange (ETDEWEB)
Bremstrahlung Isochromat Spectroscopy (BIS). The XES spectra were collected using a Specs electron gun for the excitation and the XES 350 grating monochromator and channel plate system from Scienta as the photon detection. Spectra were collected in 'normal mode,' where the electron gun kinetic energy (KE) and the energy position of the center of the channel plate were both fixed and the energy distribution in the photon (hv) spectrum was derived from the intensities distributed across the channel plate detector in the energy dispersal direction. The polycrystalline Ce sample was oxidized by exposure to air at ambient pressures. After introduction to the ultra-high vacuum system, the oxidized sample was bombarded with Ar, to clean the topmost surface region and stabilize the surface and near surface regions. Although CeO{sub 2} would be the thermodynamically preferred composition in an oxygen rich environment, the combination of a vacuum environment and ion etching may ...
2010-11-24
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