International Nuclear Information System (INIS)

The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.

International Nuclear Information System (INIS)

N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code

Energy Technology Data Exchange (ETDEWEB)

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 {mu}m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga{sup +} focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.

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The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing ...

Energy Technology Data Exchange (ETDEWEB)

Two measurement methods to determine the rate of neutral free radical production by the photo-deionization of negative ion beams (PDINIB) are introduced. These methods, namely, photoelectron-current measurement by low-frequency electro-modulation probe (PMMP) and measurement of decrease in the negative-ion beam current (DNIC) were employed to evaluate the production rate in a trial surface-processing apparatus developed in the author's laboratory utilizing a steady-flux refined beam of neutral free radicals (RBNR) produced by the PDINIB procedure. A {sup 63}Cu{sup -} negative ion beam of kinetic energy E{sub i} varied up to 15 keV was irradiated with a 514.5 nm visible light beam from a 25 W CW Ar{sup +} ion laser. The detection limit of the production rate by the PMMP setup was as high as 6 x 10{sup 9} s{sup -1} under the condition that E{sub i}=15 ...

International Nuclear Information System (INIS)

For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe"+, 360 keV He"+, and 180 keV H"+ simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred ...

International Nuclear Information System (INIS)

Effects of helium and hydrogen production on irradiation hardening of martensitic steel F82H (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) were examined by dual or triple beam experiments. The effects of tempering and cold working were also examined. The irradiations were performed at about 500degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The value of appm-He/dpa for the dual ion beams was about 15, and the values of appm-He/dpa and appm-H/dpa for the triple ion beams were 15 and 15 (or 150), respectively. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. Irradiation softening and hardening was observed in F82H-std, F82H+20%CW and a non-tempered F82H steels ...

International Nuclear Information System (INIS)

... kev range 10-100 kev range 100-1000 man mev range 01-10 personnel

Energy Technology Data Exchange (ETDEWEB)

To simulate radiation damage under a future Spallation Neutron Source (SNS) environment, irradiation experiments were conducted on a candidate 9Cr-2WVTa ferritic/martensitic steel using the Triple Ion Facility (TIF) at ORNL. Irradiation was conducted in single, dual, and triple ion beam modes using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} at 80, 200, and 350{degrees}C. These irradiations produced various defects comprising black dots, dislocation loops, line dislocations, and gas bubbles, which led to hardening. The largest increase in hardness, over 63 %, was observed after 50 dpa for triple beam irradiation conditions, revealing that both He and H are augmenting the hardening. Hardness increased less than 30 % after 30 dpa at 200{degrees}C by triple beams, compatible with neutron ...

International Nuclear Information System (INIS)

Effect of helium and hydrogen production on radiation-hardening of F82H irradiated by dual or triple beam condition were investigated. The specimens used were four types of ferritic martensitic steels of F82H-std (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) steels tempered at 750degC for 60 minutes, 20% cold worked F82H steel, F82H tempered for 10 minutes and non-tempered F82H steels. The irradiation was performed at 450degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The ratios of He (appm)/dpa and H(appm)/dpa were 15 nad 15 (or 150) for dual and triple ion beams. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. The hardness in these F82H steels irradiated at 450degC to 18 dpa under ...

International Nuclear Information System (INIS)

Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.

International Nuclear Information System (INIS)

We have synthesized ozone by irradiating thin solid films of oxygen and oxygen-water mixtures with 100 keV protons, motivated by recent reports of condensed O_3 on icy satellites in the outer Solar system. We measured the depth of the Hartley absorption band in the ultraviolet by reflectance spectroscopy and used it to quantify the column density of ozone. We analyzed the results using a three-component (O, O_2 and O_3) model that successfully explains the fluence dependence of ozone production.

International Nuclear Information System (INIS)

Several different aspects of the influence of the target backing on in-beam electron spectra following compound nuclear reactions induced by accelerated ions at tandem energies irradiating backed targets are discussed in detail. This discussion is illustrated by a few typical examples, such as "1"2C"5"+ and "3"1P"1"0"+ beams at 4 MeV/u bombarding Sn(+Be), Sn(+Au), Pb(+C) backed targets. Moreover, the relative influence of electron backscattering, electron Doppler shift and Doppler broadening as well as #delta#-electron emission on the low energy electron spectra (E_e#<=#100 keV) obtained under such conditions are investigated in the frame of the available experimental data. (orig.).

Energy Technology Data Exchange (ETDEWEB)

With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga{sup +} focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich ...

Energy Technology Data Exchange (ETDEWEB)

A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an ...

Energy Technology Data Exchange (ETDEWEB)

A 500 keV negative-ion based NBI system is under construction for NB current drive and plasma core heating in high density plasma in JT-60U. Part of the beamline and the high voltage power supply required for a verification test of an ion source was completed in March 1995. After having done a high potential test of the power supply, the negative-ion generation and acceleration tests started in June 1995 aiming at deuterium beams of 500 keV, 22A. In initial experiment, deuterium negative-ion beams of 410 keV, 6.1A (2.5 MW) for 0.2 sec, so far, have been achieved. This is the world highest D{sup {minus}} current and negative ion beam power. The construction of the total system will be completed by the beginning of 1996, and the beam injection will start in March 1996.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).

Energy Technology Data Exchange (ETDEWEB)

Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with ...

Energy Technology Data Exchange (ETDEWEB)

The interest of irradiation by carbon ions is in the fact that the carbon ions leave all their energy to a determined depth. ( phenomenon known under the name of Bragg peak)This high diffusion in tissue gives an RBE particularly high. The indications of this therapy are chordomas, and chondrosarcomas of the skull base, some cyst adenoid carcinomas, pulmonary cancer, sarcomas, hepato carcinomas, melanomas. In the light of results in term of efficiency, the place of irradiation by carbon ions should widen. (N.C.)

Energy Technology Data Exchange (ETDEWEB)

The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10[sup -15] cm[sup 2] in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, the emission factors for ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

The structural variations of amorphous metals, such as Pd/sub 80/Si/sub 20/, with irradiation of helium ion, neutron, and gamma ray have been mainly pursued by the method of X-ray diffraction and thermal analysis. It should be noticed that the amorphous metals show a radiation resistance, that is, no remarkable structural changes under helium ion, neutron, and gamma ray irradiation.

Energy Technology Data Exchange (ETDEWEB)

To suppress space charge blowup in an ion beam passing through a photoneutralizer, it is necessary to introduce some background gas. An analysis is presented of the neutralization of a high-energy, >200-keV negative deuterium ion beam, exposed to photodetachment while in the presence of deuterium. With a gas thickness of <0.01 Torr.cm, the neutral fraction in the output beam is found to be about the same as that gotten from the photoneutralizer operating in vacuum. Neutral atom beam injection for plasma heating is discussed.

International Nuclear Information System (INIS)

Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass ...

Energy Technology Data Exchange (ETDEWEB)

The irradiation behavior of Li{sub 2}TiO{sub 3} under a fusion reactor environment was simulated by simultaneous irradiation of Li{sub 2}TiO{sub 3} by the triple ion beams and the respective single ion beams of O{sup 2+}, He{sup +} and H{sup +}. The microstructural changes in Li{sub 2}TiO{sub 3} caused by the irradiation were measured by Raman spectroscopy and FT-IR photoacoustic spectroscopy. The results suggest that the formation of TiO{sub 2} due to displacements by irradiation occurs, and the irradiation defects generated by irradiation trap hydrogen and increase the amount of hydroxyl near the surface. Such phenomena are believed to significantly affect the chemical form of the released tritium and the tritium inventory in the breeding materials of a fusion reactor.

Energy Technology Data Exchange (ETDEWEB)

We present two applications of CR-39 to estimate biological effects of heavy ion irradiation. The accurate measurement of fluence of ions using CR-39 is indispensable to calculate the action cross sections for biological effects. Ions with 6 MeV/n at the Medium Energy Beam Course, HIMAC (NIRS) were extracted to the air, and degraded with the air. DNA and living cells were irradiated by ions with various specific energies at several air columns along with the Bragg curve. DNA strand breaks and cell killing were measured and the results were converted to the action cross sections using the fluence measured with CR-39 at the irradiation positions. Another example of the application of CR-39 is to identify whether the ions with a specific energy pass through the cell or stop within the cell. (author)

International Nuclear Information System (INIS)

Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, ...

Energy Technology Data Exchange (ETDEWEB)

High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.

International Nuclear Information System (INIS)

The first long pulse production of high power D"- ion beams has been demonstrated in the JT-60 U negative ion sources, each of which was designed to produce 22 A, 500 keV D"- ion beams. Voltage holding capability and the grid power loading were examined for long pulse production of high power D"- ion beams. From the correlation between voltage holding and the light intensity of cathodoluminescence from the Fiber Reinforced Plastic insulators, the acceleration voltage for stable voltage holding capability was found to be less than 320-340 kV where the light was sufficiently suppressed. By tuning the extraction voltage, the grid power loadings in the ion sources were decreased to the allowable levels for long pulse injection without a significant reduction of the beam power. After tuning the acceleration and extraction voltages, D"- ion beams ...

International Nuclear Information System (INIS)

The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within #approx#3 #mu#m. The Ga ...

International Nuclear Information System (INIS)

Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.

International Nuclear Information System (INIS)

Neutron irradiation embrittlement of reactor pressure vessel (RPV) steels is one of the critical issues on aging management for long term operation of nuclear power plants. Mechanistic understanding of embrittlement is a key to accurate prediction of embrittlement, especially after long term operation where the mechanical test data are sparse. Since matrix hardening is the source of the embrittlement, we focus on matrix hardening of A533B bainitic pressure vessel steel. Bainitic matrix is composed of lath structure made by ferrite and carbides, therefore it is important to understand how this structure affects hardening behavior, and to understand irradiation response of each phase. As the typical dimension of lath structure of A533B is about one micron, nanoindentation technique is suitable for the estimation of hardening of each phase. MV ion accelerators were used for controlled irradiation because ...

Energy Technology Data Exchange (ETDEWEB)

The damage induced by low-temperature proton irradiation in amorphous Pd/sub 80/Si/sub 20/ prepared by ion implantation is studied via electrical resistivity measurements. Our experimental results concerning the initial damage rate and the resistivity saturation are compared to the results obtained for electron and high energy /sup 16/O irradiation of amorphous Pd/sub 80/Si/sub 20/ quenched from the melt. The resistivity curve is analyzed in terms of irradiation-induced point defects.

International Nuclear Information System (INIS)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

Energy Technology Data Exchange (ETDEWEB)

The use of nitrogen ion implantation to increase the surface hardness of structural steels is well documented. Traditionally this involves the use of high energy nitrogen ion beams (approximately 100 keV), with a relatively low beam current density because high energy beams are necessary to produce the required penetration into the material to achieve a significant depth of hardened material. Hardening needs to occur in a region whose size is comparable with the scale of the deformation associated with the tribocontact. 100 keV nitrogen ions typically penetrate into steels only about 0.1 {mu}m and the range of possible tribological applications is thus restricted by this shallow treatment depth. In plasma nitriding processes the nitrogen ions approach the substrate with much lower energies but the ion currents are sufficiently high to cause ...

International Nuclear Information System (INIS)

Nano indentation analysis and transmission electron microscopy observation were performed to investigate a microstructural evolution and its influence on the hardening behavior in Fe-Cr alloys after an irradiation with 8 MeV Fe4+ ions at room temperature. Nano indentation analysis shows that an irradiation induced hardening is generated more considerably in the Fe-15Cr alloy than in the Fe-5Cr alloy by the ion irradiation. TEM observation reveals a significant population of the a0 dislocation loops in the Fe-15Cr alloy and an agglomeration of the 1/2a0 dislocation loops in the Fe-5Cr alloy. The results indicate that the a0 dislocation loops will act as stronger obstacles to a dislocation motion than 1/2a0 dislocation loops.

International Nuclear Information System (INIS)

Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle texture, while the ...

Science.gov (United States)

Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, ...

Energy Technology Data Exchange (ETDEWEB)

An electrostatic beam steering mechanism (ESM) has been designed and tested to deflect negative ion beams consisting of multi-beamlets. A steering angle of 10 mrad was obtained within the deviation of less than 1 mrad by biasing two electrodes at 0.5 kV and -0.75 kV for 120 keV H{sup -} ion beam. The current flowing to the positive electrode was no more than 10% of the beam current at a pressure of 2.8x10{sup -5} Torr. (author)

Energy Technology Data Exchange (ETDEWEB)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the ...

International Nuclear Information System (INIS)

There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging ...

International Nuclear Information System (INIS)

A series of nine model ferritic alloys were ion irradiated at #propor to#300 C using 2.5 MeV He ions to a dose of 1.4 x 10"2"1 ion/m"2, which corresponds to #propor to#0.1 dpa at a depth of 2 #mu#m and #propor to#3.5 dpa at the peak damage region which occurs at about 4 #mu#m deep. The resultant changes in hardness as a function of depth were measured using a Nanoindenter "t"r"a"d"e"m"a"r"k. TEM was used to investigate the defect distributions. The effect of various solutes, Cu and N in particular, but Mn and Ti as well, on the change of hardness and the defect distribution due to the ion irradiation are discussed. (orig.).

British Library Electronic Table of Contents (United Kingdom)

Modifications of the structure and mechanical properties in LiF crystals irradiated with MeV-energy Au ions have been studied using nanoindentation, atomic force microscopy and optical spectroscopy. The nanostructuring of crystals under a high-fluence irradiation (above 1013 ions/cm2)?was?observed. Nanoindentation tests show a strong ion-induced increase of hardness (up?to 150?200%), which is related to the high volume concentration of complex color centers, defect aggregates, dislocation loops and grain boundaries acting as strong barriers for dislocations. From the?depth profiling of the hardness and energy loss it follows that both nuclear and electronic stopping mechanisms of MeV Au ions contribute to the creation of damage and hardening. Whereas the electronic stopping is dominating i...

Energy Technology Data Exchange (ETDEWEB)

Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.

International Nuclear Information System (INIS)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 ...

International Nuclear Information System (INIS)

Full text of publication follows: Radiation hardening and embrittlement due to high-energy neutron radiation around 623 K are the important issues on reduced-activation ferritic/martensitic (RAF/M) steels. It is expected that the improvement of radiation hardening might be one of effective ways to control the mechanical properties of RAF/M after irradiation. It has been reported that the weld joint has less hardening than the base metal from the tensile test results of TIG weldments irradiated in HFIR. This report indicated that radiation hardening can be reduced by the optimization of heat treatment condition for F82H. The purposes of this study are to establish the condition of heat treatment for minimum of radiation hardening in F82H steel using Neutron/Ion-irradiation and to examine a correlation between tensile property and micro-hardness before/after irradiation. The materials used in this study ...

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

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To study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.

International Nuclear Information System (INIS)

This paper reviews various techniques to harden Charged Coupled Device (CCD) sensors and the results after irradiation of three Thomson n buried channel CCDs having a different degree of hardening. It describes the major irradiation effects on CCD performances and it makes a comparison of the results between the different hardening levels. It shows good results on dark voltage after ionizing radiation for TH 7863M device hardened both by design and by operating conditions (MPP mode) with respect to the standard device TH 7863A. The irradiations were performed with "6"0Co or X-ray (10 keV) sources on devices in operating mode. (author). 3 refs., 8 figs.

International Nuclear Information System (INIS)

Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, ...

International Nuclear Information System (INIS)

The irradiation behavior of Li_2TiO_3 under a fusion reactor environment was simulated by simultaneous irradiation of Li_2TiO_3 by the triple ion beams and the respective single ion beams of O"2"+, He"+ and H"+. The microstructural changes in Li_2TiO_3 caused by the irradiation were measured by FT-IR photoacoustic spectroscopy. The results suggest that the amount of TiO_2 formed is proportional to the dpa and that the method of irradiation does not affect the dependence of formation of TiO_2. On the other hand, the amount of defects and/or radiolytic products generated by irradiation, which is considered to trap hydrogen near the surface, is found to be affected by the method of irradiation. Such phenomena are believed to affect the tritium release behavior from Li_2TiO_3, and durability of Li_2TiO_3 and compatibility of ...

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In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR ...

International Nuclear Information System (INIS)

A study of the 150-300 keV proton beam transmission through glass (borosilicate) tapered capillaries with different diameters of the input and output of the capillary was performed. The focusing effect was observed. The areal density of the transmitted beam is enhanced by approximately 20 times. It was shown that changing a taper angle from 0.5 deg to 1.7 deg evidences the increase of the transmission coefficient more than by 300 times keeping the initial energy spectrum of ions. (author)

International Nuclear Information System (INIS)

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

International Nuclear Information System (INIS)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.

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A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

The development of high energy (> 150 keV) neutral beams for heating and fueling magnetic fusion devices depends on the ability to produce well-collimated negative ion beams. The double capture charge-exchange technique is a known, scalable method. In order to maximize the overall efficiency of the process and to achieve the desired beam characteristics, it is necessary to examine the optical qualities of the beams as well as the total efficiency of beam production. A combined modeling and experimental study of the angular scattering effects in negative ion formation and loss processes has therefore been undertaken.

International Nuclear Information System (INIS)

Ferrite of system, namely Ni_1_-_xZn_xFe_2O_4 with x = (0.0, 0.2, 0.4, 0.6, 0.8, 1.0), have been prepared by solid state reaction to investigate the effect of gamma rays irradiations using Co"6"0 source on the cation distribution, structural and magnetic properties. The unirradiated and irradiated samples were then subjected to characterization techniques such as X-ray diffraction, magnetization and AC susceptibility. The results of these characterizations are found to be different for irradiated from that of the pristine sample. The modifications in respect of irradiated samples are explained in terms of the ion-induced disorder. The important result of #gamma#-irradiation on the cation distribution, structural and magnetic properties is the change of ratio Fe"2"+/Fe"3"+. Possible reasons on the results are proposed.

International Nuclear Information System (INIS)

We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the ...

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Diffusion during He/sup +/, Ne/sup +/, and Xe/sup +/ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu/sub 6/Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the ...

International Nuclear Information System (INIS)

Localized beam-processed areas using chemical reactions induced by a 30 keV Ga"+ focused ion beam (FIB) with and without I_2 (etching) and (CH_3)_3CH_3C_5H_5Pt gases (Pt deposition) have been analyzed using a 300 keV Be"2"+ microprobe with a beam spot size of 50-80 nm. The analyzed results have been compared with energy dispersive X-ray (EDX) analysis using an electron beam. The EDX analysis only indicated incorporated impurities at high fluence such as Ga, Pt and C, while microprobe RBS analysis could detect residual iodine with low concentration which couldn't be detected by EDS analysis because of the lower sensitivity of the EDX analysis for heavy atoms.

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The radiation-induced microstructural changes have been studied by cross-sectional transmission electron microscopy for single-crystal {alpha}-Al{sub 2}O{sub 3} samples irradiated with triple ion beams (0.25 MeV H{sup +}, 0.6 MeV He{sup +} and 2.4 MeV O{sup 2+}; `Triple (A)`), (0.33 MeV H{sup +}, 0.45 MeV He{sup +} and 1.3 MeV O{sup +}; `Triple (B)`) and three consecutive single ion beams (0.3 MeV H{sup +} ion followed by 0.6 MeV He{sup +} and then 0.8 MeV O{sup +} ions) at 650 C to doses in the range 0.1-8.4 dpa at the damage peak. In the specimen irradiated with Triple (A), having the same average projected range to a total peak dose of 3.7 dpa, cavities with an average diameter of 13 nm were formed between 1.2 and 1.75 {mu}m in depth causing a swelling of 0.1% at the peak, which is larger than those of the specimens irradiated with other ...

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In this study, the effects of 325nm wavelength ultraviolet light irradiation on pitting corrosion behavior of type 340 stainless steel in a neutral chloride solution are studied. Further, the change of passive film with the light irradiation is analyzed using x-ray photoelectron spectroscopy. The mains results obtained therefrom are stated below. Pitting potential can be shifted in noble direction by the ultraviolet light irradiation. The effect of ultraviolet light irradiation is ore prominent in the pitting corrosion process than that in the passive film formation. The result of the analysis in terms of the birth and death stochastic probability process shows that pitting corrosion rate is decreased remarkably by the ultraviolet light irradiation at the formation of passive film, while the repassivation is slightly expedited by the ultraviolet light ...

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Specimens of glassy Pd{sub 80}Si{sub 20} were irradiated at temperatures below 100K with 3.5 MeV krypton ions. After irradiation, changes in the sound velocity were measured at 80 K without warm-up by Brillouin scattering. The sound velocity decreased with increasing ion fluence and exponentially approached a saturation value of -4.7%. The change in the shear elastic modulus per unit concentration n of defects was estimated to be d(ln C)/dn = -9.4 to -4.7. The results of the present study are compared with changes in the elastic properties predicted recently by an interstitialcy model for glassy metals, and with the elastic properties of glassy metals after thermal treatment.

International Nuclear Information System (INIS)

Anthracene-bis-resorcinol is an interesting molecule as it forms a hydrogen-bonded network when guest molecules with weak polarity are included. Focused ion beam (FIB) was irradiated on a part of its amorphous film with low dose, and the film was exposed to the vapor of guest molecules. From fluorescence and AFM analyses of this film, it was found that no inclusion compound was formed in FIB irradiated area, i.e. FIB irradiation suppresses the ability to form the inclusion compounds. By utilizing this phenomenon, we succeeded in a microfabrication of relief structures consisting of inclusion compounds which has different fluorescence from its surrounding. Morphology, fluorescence, and IR absorption analyses indicated that hydroxyl or resorcin groups are damaged by ion beams, and consequently a formation of hydrogen-bonded networks, which play a role of a lattice caging guest ...

International Nuclear Information System (INIS)

Hardened CMOS/SOI 29101 microprocessor, elementary cells and transistor shave been irradiated at levels between 10 Mrad(SiO_2) and 1 Grad(SiO_2) ("6"0Co and 10 keV x-rays). SIMOX buried oxide behavior in the range of 100 Mrad(SiO_2) and a channel-stopped MOS/SOI structure avoiding lateral leakage current are presented. These two items indicate the feasibility of a CMOS/SOI technology operating in the hundred Mrad(SiO_2) range.

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The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).

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P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

International Nuclear Information System (INIS)

We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.

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Much theoretical and experimental efforts have been expended in recent years to study those atomic processes which are specially relevant to understanding high temperature laboratory plasmas. For magnetically confined fusion plasmas, the temperature range of interest spans from the hundreds of eV at plasma edges to 10 keV at the center of the plasma, where most of the impurity ions are nearly fully ionized. These highly stripped ions interact strongly with electrons in the plasma, leading to further excitation and ionization of the ions, as well as electron capture. Radiations are emitted during these processes, which easily escape to plasma container walls, thus cooling the plasma. One of the dominant modes of radiation emission has been identified with dielectronic recombination. This paper reviews this work.

CERN Document Server

Several complex organic molecules are routinely detected in high abundances towards hot cores and hot corinos. For many of them, their paths of formation in space are uncertain, as gas phase reactions alone seem to be insufficient. In this paper, we investigate a possible solid-phase route of formation for methyl formate (HCOOCH3). We use a chemical model updated with recent results from an experiment where simulated grain surfaces were irradiated with 200 keV protons at 16 K, to simulate the effects of cosmic ray irradiation on grain surfaces. We find that this model may be sufficient to reproduce the observed methyl formate in dark clouds, but not that found in hot cores and corinos.

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The synergistic effects of displacement damage and atomic hydrogen and helium on swelling of the ferritic/martensitic steel, F82H, has been investigated. The irradiation was performed at temperatures between 470 and 600 deg. C to 50 dpa (displacement per atoms) under conditions of simultaneous ion beams consisting of Fe{sup 3+}, He{sup +} and H{sup +} ions or Fe{sup 3+} and He{sup +} ions. The swelling of F82H steel under triple beams with 18 appm He/dpa and 70 appm H/dpa was larger than that under dual beams with 18 appm He/dpa. The swelling in F82H under triple beams increased with decreasing irradiation temperature from 0.1% to 3.2%, while swelling under dual beams was between 0.04% and 0.08%. On the other hand, in the case of triple beam irradiation with a high ratio of gas/dpa, the swelling tended to increase with irradiation ...

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Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-{Tc} superconducting lines as narrow as 0.8 {mu}m have been fabricated from epitaxial YBa{sub 2}Cu{sub 3}O{sub 7 {minus} {ital y}} films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 {mu}m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 {times} 10{sup 4} A/cm{sup 2} at 77.3 K. Maskless etching was carried out using 130-keV au{sup +} focused ion-beam (FIB) with a 0.1-{mu}m-diameter beam. A 50-nm-thick film was patterned into 0.3-{mu}m-wide lines at a dose of 5 {times} {sup 16} ions/cm{sup 2}. In comparison with Ar IBE, Cl{sub 2} reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. ...

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A series of ball-on-disc wear and friction measurements were made for surfaces which have a chemical vapour deposition carbon silicon alloy layer on a carbon substrate (fine grain POCO graphite). Nitrogen ion irradiation was used to improve the wear resistance of the carbon alloy surface. For comparison, measurements were also taken for alumina against alumina. It was found that the lowest friction coefficient and lowest wear occurred for ion irradiated coated samples containing 4% Si in the alloy and that the performance was superior to that of alumina. ((orig.))

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The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.

International Nuclear Information System (INIS)

A study was made into microstructure and hardening in austenitic stainless steel 0Kh18N10T irradiated with neon ions (230 MeV) and neutrons (E_n > 0.1 MeV). The experiments were accomplished using an external beam of U-400 cyclotron (Dubna) and EWA reactor (Poland). The dependences of tensile properties, hardening index, microstructure, dislocation density on damaging dose were determined. An attempt is made to reveal the correlation between an yield strength increment and defect cluster accumulation. The interpretation of variations of mechanical properties and microstructure under irradiation is given.

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This paper examines the correlation between mechanical properties and the density, phase, and hydrogen content of deposited alumina layers, and compares them to those of sapphire and amorphous alumina synthesized through ion-beam irradiation of sapphire. Alumina films were deposited using electron beam evaporation of aluminum and co-bombardment with O{sub 2}{sup +} ions (30-230 eV) from an electron cyclotron resonance (ECR) plasma. The H content and phase were controlled by varying the deposition temperature and the ion energy. Sapphire was amorphized at 84 K by irradiation with Al and O ions (in stoichiometric ratio) to a defect level of 4 dpa in order to form an amorphous layer 370 nm thick. Nanoindentation was performed to determine the elastic modulus, yield strength and hardness of all materials. Sapphire and amorphized sapphire have a higher density and ...

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Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are ...

International Nuclear Information System (INIS)

A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...

International Nuclear Information System (INIS)

Recent results of the experiments at GOL-3 facility are presented. Plasma with a density of 1014...1016 cm-3 is confined in a 12-meter-long solenoid, which comprises 55 corrugation cells with mirror ratio Bmax/B min=4.8/3.2 T. The plasma is heated up to 2...4 keV temperature by a high power relativistic electron beam (?1 MeV, ? 330 kA, ?8?s, ?120 kJ) injected through one of the ends. Mechanism of experimentally observed fast ion heating, issued of plasma stability and confinement are discussed.

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In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

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The switching behavior of magnetic patterns prepared by ion irradiation was investigated. Co/Pt multilayers with perpendicular anisotropy and large out-of-plane coercivities 5-6 kOe were grown on electron transparent SiN windows. Regularly spaced 1 micron sized regions, were magnetically pattered via ion beam irradiation through a stencil mask. Lorentz TEM was used to observe in-situ magnetization reversal processes of irradiated regions under well-defined applied magnetic fields. When the in-plane field was increased, domain wall motion was observed, resulting in the alignment of the patterns with the direction of the applied field. The switching mechanism of the in-plane patterns was by domain wall motion.

International Nuclear Information System (INIS)

Oxide superconducting thin films were irradiated with X-rays and ultra-violet (UV) light, and induced radiation effects on electrical and chemical properties were examined by transport measurement, X-ray diffraction analysis (XRD), diamagnetization measurement and X-ray photoemission spectroscopy (XPS). After irradiation for ErBa_2Cu_3O_x films with X-rays emitted from a Rh tube for 100 hours, superconductivity was remarkably damaged, destroying the zero-resistance state. The UV-light irradiation for Bi_2Sr_2CaCu_2O_x films was performed in He gas of about 500 Pa with a low pressure mercury lamp. The superconductivity was gradually degraded with the UV irradiation time up to 70 minutes. In both cases, adequate oxygen-annealing treatments restored superconductivity. The X-ray photoemission spectra showed that the mean Cu valence of the films was decreased approximately from +2 to +1 by the ...

British Library Electronic Table of Contents (United Kingdom)

The formation of nanoparticles during the radiation-induced chemical reduction of silver ions, copper ions, and nickel ions in films based on poly(acrylic acid)-poly(ethylenimine) complexes are studied via electron microscopy. This approach allows preparation of composites containing nanoparticles that are randomly distributed in the polymer matrix and materials with a regular spatial distribution of nanoparticles across the film thickness and in subsurface layers. The structure of metal-polymer hybrid materials is dependent on the irradiation conditions, the type of reduced metal ions, and their initial content in polymer matrices. The ratio between the rate of nucleation and the rate of growth of nanoparticles in the matrices of interpolyelectrolyte complexes depends on the intensity of ...

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The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

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He ions incident at grazing angles on Cu(110) and Ni(110) surfaces are neutralised into triplet and singlet states, of which the 3p, 3d and 4d upper states are accessible to optical spectroscopy. In the energy range from 500 eV to 15 keV no significant energy dependence of the relative intensities of singlet and triplet lines was observed for scattering on Cu(110). The intensities from Ni(110) are higher and the singlet to triplet intensity ratio of the 3d to 2p transition is about 6% smaller than that from Cu(110). The results can be explained well by assuming resonant charge capture into excited He and intermediate formation of negative He/sup -/ states.

International Nuclear Information System (INIS)

The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).

International Nuclear Information System (INIS)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

Energy Technology Data Exchange (ETDEWEB)

The detection efficiency of gamma scanning system in irradiated materials examination facility has been measured. Gamma-ray sources used in this experiment are Cs-Co standard sources a PWR spent fuel rod in which {sup 134}Cs and {sup 154}Eu peaks are clearly identified in the energy region of 500 to 1,600 keV. The distance between source and detector is about 1.6 m. A slit type collimator with 3 mm-width window and 30 mm-thick lead block are installed between source and detector. The detector is a HPGe detector. This equipment is mainly used in gamma scanning of irradiated nuclear fuel. The measured detection efficiency seems to be 1.89 x 10{sup -6} % for 1 MeV gamma-ray. With these results the activities of unknown sources could be measured. This results are expected to be used in the measurement of the absolute distribution of gamma emitting nuclides in nuclear fuel.

International Nuclear Information System (INIS)

Free Electron Laser (FEL) with the wide wavelength tunability has been developed and used for various applications. The FEL gives high efficiency for the photo-induced ablation when the laser is tuned to an absorption maximum of the target. The FEL was tuned to 9.4 #mu#m, which is an absorption maximum of phosphoric acid ion, a known major component of dentine. The FEL pulse length was several ps. The average output power was varied from 5 to 20 mW by filters. The change of irradiated dentine surface was analyzed by mass spectroscopy and Energy Dispersive X-ray (EDX) spectroscopy. Positive ions which correspond to Na"+, CO_3"+ and many phosphoric acid ions were measured. It was found that atomic ratio of P/Ca had reduced from 0.65-0.60. The atomic ratio of P/Ca, however had not changed with irradiation by Er:YAG laser (2.9 #mu#m), or CO_2 laser (10.6 #mu#m). These results indicate ...

Energy Technology Data Exchange (ETDEWEB)

The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO/sub 2/, Si/sub 3/N/sub 4/ and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si/sub 3/N/sub 4/, but SiO/sub 2/ appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO/sub 2/ and Si/sub 3/N/sub 4/ films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films.

CERN Document Server

Polarization measurements in the X-ray and gamma-ray energy range can provide crucial information on massive compact objects such as black holes and neutron stars. The Polarized Gamma-ray Observer (PoGO) is a new balloon-borne instrument designed to measure polarization from astrophysical objects in the 30-100 keV range, under development by an international collaboration with members from United States, Japan, Sweden and France. To examine PoGO's capability, a beam test of a simplified prototype detector array was conducted at the Argonne National Laboratory Advanced Photon Source. The detector array consisted of seven plastic scintillators, and was irradiated by polarized photon beams at 60, 73, and 83 keV. The data showed a clear polarization signal, with a measured modulation factor of $0.42 \\pm 0.01$. This was successfully reproduced at the 10% level by the computer simulation package Geant4 after modifications to its ...

International Nuclear Information System (INIS)

For very low collision energies electron capture from excited hydrogen by multicharged ions is characterized by enormous cross sections, the predicted maximum being comparable to the geometric size of the Rydberg atom. The ion-atom merged-beams technique is being used to study these collisions for the variety of charge states and the wide range of energies (0.1 to 1000 eV/amu) accessible to the apparatus. A neutral D beam containing a Rydberg atom population proportional to 1/n"3 is produced by collisional electron detachment of 8 keV D"- in N_2 gas. An applied electric field results in the range (n=24--11) depending on the strength of the field applied. This beam is then merged with O"3"+ or O"5"+ ion beams at low relative collision velocities where the resultant beam-beam signal of D"+ due to electron loss is dominated by electron capture. From the sharp decrease in the observed beam-beam signal as ...

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The response of MOS capacitors to low- and medium-energy x-ray irradiation is investigated as a function of gate material (TaSi or Al), oxide thickness, and electric field. Measured device response is compared with predictions based on discrete ordinates and Monte Carlo code simulations of dose enhancement effects, coupled with recent estimates of electron-hole recombination in MOS oxides. In comparisons of 10-keV x-ray and Co-60 irradiations of Al-gate MOS capacitors at an oxide electric field of 1 MV/cm, it is found that predictions and experiments agree to within better than 20 percent for oxide thicknesses ranging from 35 to 1060 nm. For capacitors having TaSi/Al gates, predictions and experiments agree to within better than 30 percent at 1 MV/cm, with the largest differences occurring for 35-nm gate oxides. At other electric fields, the disagreement between experiment and prediction increases significantly for both Al- ...

International Nuclear Information System (INIS)

The swelling behavior which results from simulated fusion environment irradiation of Fe-10% Cr has been characterized with transmission electron microscopy. Specimens were bombarded at 850 K with: a ''triple-beam'' of He"+, D_2"+, and 4 MeV Fe"+"+ ions to 0.3, 1, 3, 10, 30, and 100 dpa (displacement per atom); a ''dual-beam'' of He"+ and 4 MeV Fe"+"+ ions to 30 and 100 dpa; and a ''single-beam'' of 4 MeV Fe"+"+ ions to 30 dpa. The helium and hydrogen injection rates were approx. =10 appm He/dpa and approx. =40 appm D/dpa. Cavities were observed for damage levels of 3 dpa and greater. The swelling was <0.1% for damage levels <30 dpa, but at 100 dpa, there was an increase in the swelling to 2.5% for the ''triple-beam'' irradiation and 1.2% for the ''dual-beam'' irradiation. The swelling rates between 30 and 100 dpa correlate well with calculated values ...

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The construction of Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences was completed in December 1993. HIMAC consists of an injector linac, two synchrotron rings, a high energy beam transport system and a beam irradiation system. Its accelerator parameters are based on the medical requirement, and helium, carbon, neon, silicon and argon were selected as the accelerated ion species. It has 3 therapy rooms (A{approx}C). Room A has a vertical irradiation system, Room C horizontal and Room B both vertical and horizontal. Two rings can supply beams independently to the vertical and horizontal irradiation systems. Clinical trial started on June 21 1994, after several basic biological and physics experiments lasting about 2 months. Cancer is the top cause of death in Japan since 1981, and people expect good treatment results at HIMAC. Proton ...

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TiH{sub 2} and TiD{sub 2} thick targets were bombarded with 100 to 200 keV protons. Evidence for nuclear reactions was obtained by means of a surface barrier particle detector. Proton irradiation of TiD{sub 2} produced the following observations: {alpha} particle emission identified as (p, {alpha}) reactions from {sup 11}B and {sup 7}Li impurities in the target at ppm concentrations; and {approx}3 MeV proton and {approx}1 MeV triton emission from secondary D-D reactions caused by elastic scattering of the primary proton with a target deuteron. A 3.9 MeV {alpha} particle peak measured by others was not observed. (author)

International Nuclear Information System (INIS)

Recent two major topics of Large Helical Device (LHD) towards fusion relevant conditions, high-density operation and high-ion-temperature operation, are reported. Super dense core plasma was obtained by the combination of repetitive hydrogen ice pellet injection and high power neutral beam injection (NBI) heating. A very peaked density profile with the highest central density of 1.1x1021 m-3 was produced showing that the particle transport was suppressed very well in the plasma core. The spatial density varies as the position of magnetic axis (Rax), and the steepest profile is obtained at Rax=3.95 m. The highest central ion temperature of 5.6 keV was obtained in hydrogen plasma at electron density of 1.6 x 1019 m-3 by NBI, where a peaked ion-temperature profile with internal ion energy transport barrier was observed. The profile of electron temperature did not change much and was ...

International Nuclear Information System (INIS)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is ...

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Coded imaging techniques using thick, micro-Fresnel zone plates as coded apertures have been used to image x-ray emission (2--20 keV) and 3.5 MeV Alpha particle emissions from laser driven micro-implosions. Image resolution in these experiments was 3--8 ..mu..m. Extension of this coded imaging capability to higher energy x rays (approx.100 KeV) and more penetrating charged particles (e.g., approx.15 MeV protons) requires the fabrication of very thick (50--200 ..mu..m), high aspect ratio (10:1), gold Fresnel zone plates with narrow linewidths (5--25 ..mu..m) for use as coded apertures. A reactive ion etch technique in oxygen has been used to produce thick zone plate patterns in polymer films. The polymer patterns serve as electroplating molds for the subsequent fabrication of the free-standing gold zone plate structures.

International Nuclear Information System (INIS)

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.

Science.gov (United States)

The effects of the structure of a carboxylic acid on the processes of oxidation and reduction of iron ions in irradiated aqueous solutions were directly observed during irradiation. The solutions contained the mono- or dicarboxylic acid, H/sub 2/SO/sub 4/, Fe(NH/sub 4/)/sub 2/(SO/sub 4/)/sub 2/ and O/sub 2/. Th e ferrous oxidation was rather independent of the acid and its concentration, but the reduction of ferric was possible in the presence of formic, oxalic, or valeric acid only. The radical formed from the valeric acid acts similar to those formed from hydrocarbons. The G-values of oxidation and reduction of the iron ions were established. The molar extinction coefficients for oxalic and malonic complexes of ferric ions were determined. (auth)

International Nuclear Information System (INIS)

Experimental investigation data are systematized of free radical states and processes in irradiated proteins. The investigation is performed by the radiospectral methods. Results are discussed in detail of the study of free radicals electronic structure of amino acids, peptides and proteins formed by the action of ionizing radiation. The specificity is stressed of the study of monocrystalls of these compounds by the method of electronic paramagnetic resonance. The nature is also studied of primary centres formed under the effect of radiation on biologically important compounds and their subsequent reactions in solid and liquid solutions. Ion-radical states of different functional groups of the protein molecule are studied. Prospects of the study and the role of anion-radicals in biological processes are discusses.

International Nuclear Information System (INIS)

In this experiment, we measured the detection efficiency of gamma-scanning system of Irradiated Materials Examination Facility (IMEF) in Korea Atomic Energy Research Institute(KAERI) for the spent PWR fuel and activity known sources with high activity. We measured the absolute detection efficiency of gamma scanning system of IMEF to the "1"3"7Cs-source with 10.4 GBq and "6"0Co source with 25.9 GBq High-activity sources as standard sources, and a fuel burned in the KORI -1 reactor of the Kori Nuclear power plant. In analyzing, we used three peeks those were the 661.64 keV peak form "1"3"7 Cs 1173.23 and 1332.51 keV"6"0 Co sources, and 14 peaks of "1"3"4Cs and "1"5"4Eu on the spent fuel gamma spectrum which are in the energy range from 500 to 1,600 keV. We find second order equations for detection efficiency by using our experimental results. The equation show that the detection efficiency of gamma ...

Energy Technology Data Exchange (ETDEWEB)

Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from ...

Energy Technology Data Exchange (ETDEWEB)

A procedure was developed for separating rubidium from irradiated aluminum encapsulated uranium. The separations procedure produces a final ultra-high purity RbCl product for subsequent high performance mass spectrometric analysis. The procedure involves first removing most of the macro-components and fission products by strong base anion exchange using, first, concentrated HCl, then oxalic acid media and second, selectively separating rubidium from alkaline-earth ions and other alkali-metal ions, including cesium, using Bio-Rex-40 cation-exchange resin. The resultant RbCl is then put through a final vacuum sublimation step. Ultra-pure reagents and specially clean glassware are used throughout the procedure to minimize contamination by naturally-occurring rubidium.

International Nuclear Information System (INIS)

Polycrystalline specimens of spinel (MgAl_2O_4) and alumina (Al_2O_3) were irradiated at room temperature and 650deg C with either dual- or triple-ion beams in order to investigate the effects of simultaneous displacement damage and helium implantation on cavity formation. The cavities in alumina were aligned along the direction of the c-axis, with diameters ranging from < 2 to 10 nm. The cavities in spinel were preferentially associated with dislocation loops and were of similar size as the cavities in alumina. Catastrophic amounts of cavitation were observed at the grain boundaries in spinel when the displacement damage level exceeded a critical value (#approx =# 20 dpa) in the presence of a fusion-relevant (#approx =# 60 appm/dpa) helium environment. (orig.).

International Nuclear Information System (INIS)

The phenomenon of radiation blistering by helium ion bombardment has been the subject of extensive studies in recent years because of its technological importance in thermonuclear fusion devices and reactors. However, the mechanism of radiation blistering is still not well understood. There are two different models of blister formation: the gas-pressure model and the lateral stress model. The former model is, however, supported by many experimental observations, the prominent one is that of Evans and Eyre who observed blisters appearing on the front and rear surfaces of a thin wedge-shaped molybdenum foil irradiated by helium ions. Their experiment also indicates that the thickness of the irradiated specimen could be important in affecting the characteristics of blisters. With this in view, we have studied the development of blisters in thin foils of tantalum by 30 MeV #alpha#-particle bombardment. ...

International Nuclear Information System (INIS)

Lead is known to enter substitutionally in divalent state when doped in alkali halides. When irradiated at room temperature these lead centers (Pb"+"+) act as traps for electrons knocked off from the halogen ions and become Pb"+ and Pb"0 (for large doses of irradiation). These changes could be followed in the optical absorption studies. These lead-doped crystals after X-ray irradiation yield a thermoluminescence output smaller than that observed in 'pure' crystals. However, two new glow peaks are observed in additions to those due to F-centers. In KCl : Pb and Kbr : Pb crystals part of the F-center glow preceds the new glow peaks. The new peaks are attributed to the Pb"+ and Pb"0 centers. The glow peak temperatures and trap depths for these peaks an obtained by total-curve fitting method are reported. (author).

International Nuclear Information System (INIS)

L'invention concerne un procede de triage de cristaux irradies. Ce procede non destructeur comporte l'irradiation des cristaux par un rayonnement ionisant pendant une duree et avec une intensite telles qu'il se forme des centres colores distinctifs dans les matieres contenant des ions aluminium. Les cristaux colores qui correspondent en teinte et en profondeur de couleur a des teneurs en aluminium en dehors de la teneur desiree peuvent etre separes. On peut isoler ainsi des matieres de quartz, de verre, de silicates exemptes d'aluminium dans un melange, ou bien on peut choisir des fractions de ces matieres, chacune contenant une teneur uniforme en aluminium.

International Nuclear Information System (INIS)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated ...

International Nuclear Information System (INIS)

Free Electron Laser (FEL) with wide wavelength tunability has been developed and used for various applications. We report the structural-changes in P-ion-implanted diamond when we can achieve resonant excitation of the vibrations of specific bonds in the lattice of target (P-C) by using FEL. The change of property was analyzed by SIMS and Raman spectroscopy. After 5.8 #mu#m-FEL irradiation, we observed the crystallization of amorphous structure which was induced by P-ion-implantation. These results indicated the FEL annealing of diamond at room temperature. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

Energy Technology Data Exchange (ETDEWEB)

Characteristics of lead-zirconate-titanate (PZT) elements were studied by directly irradiating them with a 400 MeV/n Xe beam. The elements were sensitive to 10{sup 4} Xe ions and their output amplitudes were proportional to the beam intensity. An ensemble of those output amplitudes displayed a Bragg-curve-like response towards the range of 400 MeV/n Xe ion. We discuss the potential of PZT elements as a radiation detector and their application to high-intensity and high-energy detectors. (author)

Energy Technology Data Exchange (ETDEWEB)

A time-of-flight mass spectrometer has been constructed to measure the energy spectra of particles scattered by 10/sup 0/ with primary energies between 200 eV and 15 keV. The energy resolution ..delta..E/E of the system is between 0.1 and 0.4%. Energy spectra of scattered molecules and their dissociation products are shown for 570 eV H/sub 2//sup +/ and 4430 eV N/sub 2//sup +/ as projectiles. Electron capture into unbound states of the neutral molecule, with perhaps some contribution from mutual scattering within the molecule, appears to explain the observed dissociation product energy spectra peak widths.

Energy Technology Data Exchange (ETDEWEB)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

International Nuclear Information System (INIS)

Elastic scattering cross sections of keV protons in solids (Z=3-82) are calculated using the partial wave expansion technique and the ''muffin-tin'' bound-atom potential. The differential cross sections for small scattering angles of less than 10deg are smaller than those with the Ziegler-Biersack-Littmark potential at all energies and for all solids, although, for larger angles, the two cross sections agree with each other. The mean free paths of the protons in the solids, obtained from the total cross sections, decrease very slowly with decreasing energy. Furthermore, at low energies they approach half the nearest-neighbor distance, which is taken as the radius of the augmented plane wave sphere in the muffin-tin model of crystalline solids. (orig.).

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

International Nuclear Information System (INIS)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

Energy Technology Data Exchange (ETDEWEB)

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

International Nuclear Information System (INIS)

Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers ...

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials ...

Energy Technology Data Exchange (ETDEWEB)

The object and the purpose of the present work was to develop, to assemble and to start running a new TOF (time of flight) mass spectrometer for imaging SNMS analytic which is optimized for the analysis of highly molecular secondary ions. The most important purpose was the characterization of the TOF mass spectrometer. The obtained mass spectra of indium, tantalum and silver clusters reflect the excellent properties of the TOF mass spectrometer for the detection of large clusters with good detection efficiency up to masses of 16000 amu. The possibility of the deflection of selected saturated atom and cluster peaks serves for further improvement of the detection efficiency for large molecules. The accessible mass resolution was determined to be of the order of m/{delta}m=1000 in the high mass region. Numerous measurements were carried out to characterize the useful yield of this spectrometer. For a best possible adaptation of the TOF mass spectrometer for the ...

International Nuclear Information System (INIS)

The synthetic process of polyethylene cation exchange capillary via radiation grafting polystyrene by simultaneous irradiation with "6"0Co #gamma#-ray source and sulfonation with concentrated H_2SO_4 was studied. The effects of dose, dose rate, monomer concentration, solvents, temperature and crosslinking agents on the graft copolymerization of styrene with polyethylene capillary were illustrated. The relationship between the radiation grafting conditions and the properties of ion-exchange capillary were examined. A polyethylene cation exchange capillary with I.D. 0.8 mm, length 20 m, exchange capacity 0.7 Meq/g 60% capacity in 10 s (flow rate 20 ml/min) was prepared. No significant loss of copacity was found from this ion-exchange capillary after 200 adsorption/regeneration cycles.

International Nuclear Information System (INIS)

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni_2Si, while Si is the diffusing species in CrSi_2. In Pd_2Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

Energy Technology Data Exchange (ETDEWEB)

The three-dimensional magnetic structure and reversal mechanism of patterned Co/Pt multilayers, were imaged using complementary Lorentz transmission electron microscopy (LTEM) (in-plane component) and magnetic transmission x-ray microscopy (M-TXM) (perpendicular magnetization). The Co/Pt films with perpendicular anisotropy were patterned by ion irradiation through a stencil mask to produce in-plane magnetization in the irradiated regions. The boundaries of the patterns, defined by the transition from out-of-plane to in-plane magnetization, were found to be determined by the stencil mask, whilst the scale of the magnetic reversal by the physical microstructure. The nucleation fields were substantially reduced to 50 Oe for the in-plane regions and 1 kOe for the perpendicular regions, comparing to 4.5 kOe for the as-grown film. The perpendicular reversals were found to always originate at the pattern boundaries.

International Nuclear Information System (INIS)

Using the advantage that the projected range of ions in matter is sharply limited, a new technique for the production of three-dimensional microstructures has been developed. Based on the P-LIGA technique (Proton-Lithographie, Galvanoformung, Abformung) this process allows the generation of structures with surfaces of almost any shape having a root mean square roughness of about #lambda#/50 for visible light wavelengths. An ion beam with diameters between 2 and 50 #mu#m is directly writing the structures and the shape is varied by geometrical manipulation of the sample in three axes during the exposure. Practically, structures have been written using protons with an energy of 1.8 MeV in a provisional experimental setup with beam diameters of 10 and 50 #mu#m, respectively. After irradiation, the parts exposed were dissolved in a liquid developer without affecting the nonirradiated parts. The shape and the rms roughness of ...

International Nuclear Information System (INIS)

Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi_2 was formed on amorphous Si substrates at 350 "0C, while NiSi remained stable on crystalline Si substrates even at 400 "0C. PtSi reacted with Si to form a metastable Pt_4Si_9 phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt_4Si_9 was easier on crystalline Si substrates than on amorphous substrates. No mixing was observed for PdSi on Si in the temperature range of 35--400 "0C. The ion mixing results were compared with those from thermal annealing. The importance of demixing of a thermally stable system was explored.

International Nuclear Information System (INIS)

Development of techniques for separating isomeric nuclides is important to the investigation of schemes for gamma-ray lasers. In preparation for an experiment to separate 10_1_4 atoms of the /sub 197m/Hg (299 keV, tau/sub 1/2/ = 24 hours) isomer, we report isotopically selective resonance ionization of mercury atoms. This has been accomplished by three-step excitation via the 6_3P"1 and 8_1S"0 excited states, using three collinear pulsed laser beams of 254, 286, and 532 nm wavelengths from a Nd:YAG and two dye lasers. These beams were passed through a closed mercury-vapor cell containing electrostatic plates to which the ions were drawn. Ion current and fluorescent radiation were measured as a function of laser frequency. Hyperfine structures for the 254- and 286-nm transitions were observed.

Energy Technology Data Exchange (ETDEWEB)

The large uranium fission cross section leading to iodine and the behaviour of this element in the cladding tube during energy production and afterwards during waste storage is a crucial problem, especially for {sup 129}I which is a very long half-life isotope (T=1.59 x 10{sup 7} yr). Since a combined external and internal oxidation of the zircaloy cladding tube occurs during the reactor processing, iodine diffusion parameters in zirconia are needed. In order to obtain these data, stable iodine atoms were first introduced by ion implantation into zirconia with an energy of 200 keV and a dose equal to 8 x 10{sup 15} at cm{sup -2}. Diffusion profiles were measured using 3 MeV alpha-particle Rutherford backscattering spectrometry at each step of the annealing procedure between 700 C and 900 C. In such experiments a reduced iodine concentration was observed, which correlated to a diffusion-like process. Similar analysis has been performed using ...

Energy Technology Data Exchange (ETDEWEB)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation loop were observed from ...

Energy Technology Data Exchange (ETDEWEB)

Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and ...

International Nuclear Information System (INIS)

The inelastic energy losses for single collisions of Xe"+ ions with Xe targets have been measured for incident ion energies from 0.3 to 1.2 MeV and for scattering angles from 3"0 to 20"0. The energy losses were found to range from 1 to 11 keV with distinct steps at distances of closest approach of 0.22 and 0.12 A. By comparing these data with earlier ionization data by the same authors these steps are shown to be caused by M-shell excitation. Other excitations observed in the ionization data may be attributed to N-shell excitation. The distances of closest approach at which these excitations occur agree well with calculations by Eichler and Wille and co-workers, giving further evidence of the usefulness of Fano and Lichten's one-electron molecular model and these calculations.

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In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

Energy Technology Data Exchange (ETDEWEB)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. ...

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A series of experimental measurements of ozone concentration produced by irradiation of noble gas (He, Ne, and Ar)-O_2 and noble gas-O_2- SF_6 mixtures with energetic (MeV) helium and lithium ions are reported. Continuous irradiations at dose rates of 10"1"5-10"1"7 eV cm"-"3 S"-"1 for a few hundred milliseconds were used. The resulting ozone concentration was found to be nonlinear with dose rate for a given irradiation time. This nonlinearity was effectively reduced by an increase in noble gas pressure. Few mole percent addition of SF_6 generally resulted in an increase in the ozone concentration. This increase was highest for lower noble gas pressures and longer irradiation times. Further SF_6 addition, however, caused a reduction in the ozone concentration. Results are explained by considering the relevant reactions responsible for ozone production and loss.

International Nuclear Information System (INIS)

As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 stainless. Electrochemical experiments were carried out to ...

International Nuclear Information System (INIS)

The expanding plasma produced when an intense pulse of laser radiation is focused in vacuum onto a solid target has been used as a source of highly stripped ions for collision cross-section measurements. Usable fluxes of carbon nuclei at energies of a few hundred eV/charge have been obtained by irradiation of graphite with pulses of CO"2 laser radiation at a focused power density of 3 x 10_1_0 W/cm_2. Bombardment of aluminum and iron targets at comparable power levels have yielded ions of maximum charges of 9 and 16 respectively. A time-of-flight apparatus has been constructed to utilize the laser source for measurement of electron capture cross sections for highly stripped ions in gases at energies in the few hundred eV/charge range. Apertures collimate an ion beam from the plasma blowoff, and an electrostatic analyzer selects ions from the expanding plasma ...

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In this paper we discuss the results of thermoluminescence (TL) studies carried out on freshly quenched crystals of KBr doped with #approx# 50 ppm of Eu"2"+ ions which were X-irradiated at room temperature. The TL glow curve of this phosphor material consists of three glow peaks at 355, 376 and 398 K whose intensities increased as a function of X-irradiation time. The TL glow peaks were analyzed by the total curve-fitting method in order to obtain the characteristic parameters; activation energy, pre-exponential factor and kinetic order. The spectral character of the emission recorded during thermoluminescence was found to be the same for all glow peaks and consists of a broad band centered at #approx# 420 nm. It is proposed that the model of the TL process most consistent with our experimental results is one in which the Eu"2"+ impurity acts as an electron trap during the irradiation process and that ...

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The transmutation of minor actinides in-reactor is one solution currently being studied for the long time management of nuclear waste. In the heterogeneous concept the radionuclides are incorporating in an inert ceramic matrix. The support material must be insensitive to radiation damage. Fission product damage is the main radiation damage source during the transmutation process and therefore it is of the utmost importance to study their effects. We irradiated spinels MgAl_2O_4 (matrix of reference) and ZnAl_2O_4 by fast ions (by example: (86)Kr of approximately 400 MeV) simulating the fission products. Under these conditions, the damage is primarily due to the electronic energy losses (Se). One of the structural features of spinel AB_2O_4 is that the two cations (A(2+) and B(3+)) can exchange their site. This phenomenon is quantified by the inversion parameter. We highlight by XRD in grazing incidence that the structural changes observed in ...

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In this experiment, we measured the detection efficiency of gamma-scanning system of Irradiated Materials Examination Facility (IMEF) in Korea Atomic Energy Research Institute(KAERI) for the spent PWR fuel and activity known sources with high activity. We measured the absolute detection efficiency of gamma scanning system of IMEF to the {sup 137}Cs-source with 10.4 GBq and {sup 60}Co source with 25.9 GBq High-activity sources as standard sources, and a fuel burned in the KORI -1 reactor of the Kori Nuclear power plant. In analyzing, we used three peeks those were the 661.64 keV peak form {sup 137} Cs 1173.23 and 1332.51 keV{sup 60} Co sources, and 14 peaks of {sup 134}Cs and {sup 154}Eu on the spent fuel gamma spectrum which are in the energy range from 500 to 1,600 keV. We find second order equations for detection efficiency by using our experimental results. The equation show that the detection efficiency of gamma ...

British Library Electronic Table of Contents (United Kingdom)

Bent specimens of A533B steel (0.16wt% Cu) were irradiated at 290degreeC to 1dpa with 6.4MeV Fe3+ ions. Calculated tensile stresses at the irradiated surface were set to 0, 250, 500 and 750MPa. The specimens were subjected to hardness measurements, transmission electron microscopy (TEM) observations and three-dimensional atom probe (3DAP) analysis. The radiation-induced hardening decreased with increasing stress to 500MPa which was near the yield strength. TEM and 3DAP results showed that well-defined dislocation loops and solute clusters were formed. The diameter of dislocation loops increased and the number density decreased when the stress was applied, whereas the diameter and number density of solute clusters decreased. The hardening was mainly attributed to solute cluster formation. A...

International Nuclear Information System (INIS)

The industrial radiation processing using low energy electron beam (EB) accelerators lower than 300 keV offers high speed, safe technologies for the chemical conversion of thin layer coatings. Because of the nonselective mode of initiating chain reaction polymerization involving free radicals in synthetic coating layers and suitable substrates, the EB curing of the coatings on woods and papers has particular advantage. Hungary decided to start an up-to-date EB line to process cement-bound (CB) wood chipboards with pigmented acrylic coatings. The CB wood chipboards contain more than 60 % of portland cement and up to 40 % of wood particles. They are produced as large boads of 6 - 16 mm thickness. In their fireproof character and other aspects, they are similar to asbestos-cement boards without containing carcinagenic asbestos, and are stable against moisture and atmospheric influences. EB-cured acrylate coating improved further those properties, and makes them ...

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A microwave hydrogen ion source was developed to improve reliability, and to increase operation time of proton linac application systems. The ion source needs no filament in the discharge chamber, which leads to better reliability and less maintenance time. The developed source produced a maximum hydrogen ion beam current of 70 mA (high current density of 360 mA/cm2, beam energy of 30 keV) with a 5 mm diam extraction aperture and 1.2 kW microwave power. The proton fraction was increased with an increase in rf power and reached around 90% at 1 kW. Measured 90% beam normalized emittance was 0.4 #pi# mm mrad. Rise times of rf power and beam current to 90% of the final values were about 30 and 35 #mu#s, respectively, at a pulse operation mode with 400 #mu#s pulse width and 100 Hz repetition rate. The dynamic range of beam currents was enlarged (3-63 mA) in the pulse mode with a modified rf wave form to ...

Science.gov (United States)

Pulse radiolysis studies of the formation kinetics and the yields of various phenylcarbenium ions from several different solutes in 1,2-dichloroethane solution have been carried out. The results indicate that there are two kinetically distinguishable cationic species of the solvent which react selectively with the different solutes to form the phenylcarbenium ions. It is suggested that one is a cation radical (yield 0.68 molecule/100 eV) and the other a carbocation (yield 0.20 molecule/100 eV). Rate constants for their separate reactions with selected aromatic compounds and with ammonia have been determined. Molar extinction coefficients have been estimated for benzyl cation, diphenyl cation radical, and anthracene cation radical. 6 figures, 1 table.

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The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments on irradiated p-Si containing B. The levels observed at E_c-0.23, E_v+0.29, and E_v+0.51 eV are assigned to B_iO_i, B_iC_s, and B_iB_sH_i respectively. B_iC_s is passivated by one H atom. Evidence for the existence of B_iC_s has implications for mechanisms involved in the suppression of transient-enhanced diffusion of boron in ion-implanted Si by C.

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Track analysis of medium energy #alpha# particle trajectories recorded in fine grain nuclear emulsion submitted to specific intensifying treatments led to the observation of strong ionizing events (SIE) sticking out of the primary's track core. Preliminary determinations showed that the number of SIEs increases with the primary's energy, and that their production is of more than one order of magnitude higher than the number of Rutherford recoils. The presence of SIEs on monoenergetic #alpha# tracks also has a significant influence on the measured range distribution, which, expressed in terms of energy loss, results in a mean contribution to the total energy loss of far reaching (SIEs (radial spread >= 0.458 #mu#m) of proportional 25 keV per 13.6 MeV #alpha# particle, instead of 0.75 keV in the case where only the Rutherford interactions are taken into account. Measurements carried out in detectors enriched with gelatin indicate an increase ...

International Nuclear Information System (INIS)

We have performed molecular dynamics simulations of radiation damage in fused silica. In this study, we discuss the role of successive cascade overlap on the saturation and self-healing of oxygen vacancy defects in the amorphous fused silica network. Furthermore, we present findings on the topological changes in fused silica due to repeated energetic recoil atoms. These topological network modifications consistent with experimental Raman spectroscopic observation on neutron and ion irradiated fused silica are indicators of permanent densification that has also been observed experimentally.

Energy Technology Data Exchange (ETDEWEB)

A simple and rapid procedure was developed for the purification of cyclotron-produced {sup 203}Pb via the {sup 203}Tl(d,2n) {sup 203}Pb reaction. A Pb(II) selective ion-exchange resin, with commercial name Pb Resin from Eichrom Technologies, Inc., was used to purify {sup 203}Pb from the cyclotron-irradiated Tl target with excellent recovery of the enriched Tl target material. The purified {sup 203}Pb was used to radiolabel the monoclonal antibody Herceptin. The in vitro and in vivo properties of the {sup 203}Pb radioimmunoconjugate were evaluated.

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Experimental results on study of helium concentration influence on degree of molybdenum radiation hardening for various method of cyclotron doping differing in degree and damage character are presented. It is established that accumulation of helium atoms in molybdenum for simultaneous formation of radiation defects caused by low energetic primary-knocked atoms leads to higher degree of hardening than for high energetic ion irradiation. It is shown that with increase of helium atom concentration the degree of radiation hardening for the same level of damage increases. 4 refs.; 3 figs. (author).

International Nuclear Information System (INIS)

The total interaction cross sections (#sigma#_t) of some sugars and amino acids and five elements: lithium, carbon, oxygen, aluminium and calcium have been measured for 6.4 keV, 13.95 keV, 14.4 keV, 17.74 keV, 24.14 keV, 30.8 keV, 35 keV, 59.54 keV, 81 keV, 122 keV and 136 keV photons in a narrow beam good geometry set up, by using high resolution detectors such as a Si-PIN diode detector and a high purity germanium detector. The #sigma#_t values have been used in a matrix method to evaluate the effective atomic numbers Z_e_f_f of the samples from their effective atomic cross sections #sigma#_a. The effective atomic cross section of a sample #sigma#_a is the total interaction cross section divided by the total number of atoms of all types in it. Further, a ...

International Nuclear Information System (INIS)

Austenitic stainless steels have been implanted with molybdenum ions (Mo"+, 100 keV, 2.5 x 10"1"6 atoms cm"-"2). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of #approx# 1000 A with a maximum molybdenum concentration of #approx# 9 at.% Mo located at #approx# 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H_2SO_4 have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and non-implanted alloys and the thicknesses of the films are similar. On the implanted alloy the outer ...

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An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two ...

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The half-life ({ital T}{sub 1/2}) and {ital g} factor of the 2002 keV 11{sup {minus}} isomer in the odd-odd nucleus {sup 92}Tc produced by the pulsed heavy-ion reaction {sup 68}Zn({sup 28}Si,{ital p}3{ital n}){sup 92}Tc have been measured using time differential perturbed angular distribution method. The measured {ital T}{sub 1/2} value is 3.15(20) ns. From the observed spin precession frequency {omega}{sub {ital L}} of a {sup 92}Tc recoil implanted into a ferromagnetic Ni host, we obtain the {ital g} factor to be 0.806(20). The measured value of the {ital g} factor is in good agreement with a shell model analysis carried out using {pi}({ital p}{sub 1/2}{ital g}{sub 9/2}) and {nu}({ital p}{sub 1/2}{ital g}{sub 9/2}) orbitals for the proton particles and neutron holes outside the {sup 88}Sr core. {copyright} {ital 1996 The American Physical Society.}

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in ...

International Nuclear Information System (INIS)

The atomic masses of the alkali-metal isotopes "6Li,"2"3Na,"3"9","4"1K,"8"5","8"7Rb, and "1"3"3Cs have been obtained from measurements of cyclotron frequency ratios of pairs of ions simultaneously trapped in a Penning trap. The results, with one standard deviation uncertainty, are: M("6Li)=6.015 122 887 4(16)u,M("2"3Na)=22.989769 282 8(26)u,M("3"9K)=38.963 706 485 6(52)u,M("4"1K)=40.961 825 257 4(48)u,M("8"5Rb)=84.911 789739(9)u,M("8"7Rb)=86.909 180 535(10)u, and M("1"3"3Cs)=132.905 451 963(13)u. Our mass of "6Li yields an improved neutron separation energy for "7Li of 7251.1014(45) keV.

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Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is ...

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TiH{sub 2} and TiD{sub 2} thick targets were bombarded with 100 to 200 keV protons or deuterons. Evidence for nuclear reactions was obtained by means of a surface barrier particle detector. Deuteron irradiation of TiD{sub 2} produced these observations: copious {approx}2.5 MeV neutrons and {approx}3 MeV protons from direct D-D reactions; gamma rays from p,{gamma} and n,{gamma} reactions; {approx}14 MeV protons from the secondary d({sup 3}He, p){alpha} reaction; and a signal between {approx}6-12 MeV that Kasagi et al. has tentatively identified as protons from the fusion of three deuterium nuclei. However, this signal has in it a strong interference signal from either neutrons or gamma rays that directly deposit energy in the detector. This interference spectra was measured by placing a thick absorber in front of the detector that stops up to 20 MeV protons, but not gamma rays or neutrons. More experiments must be done before we can confirm or ...

International Nuclear Information System (INIS)

Borosilicate based glass formulations have been found suitable for fixing the HLW (high level radioactive liquid waste) generated after reprocessing of the spent nuclear fuel. As the glass experiences continuous irradiation by #alpha#, #beta#a, and #gamma# radiations from the radioactive components of HLW, alteration in the glass structure may occur. Understanding of these structural evolutions of the nuclear waste glasses under irradiation is crucial to secure long term disposal and predict their behavior. In the present work, alkali based barium borosilicate glasses, having composition similar to that of Trombay Research Reactor waste glass were irradiated with high energy "1"2C beam and the radiation induced changes were monitored by micro Raman experiment. Since a "1"2C atom can be considered as a cluster of alphas, this beam was chosen to yield linear energy losses (LET) comparable to that in case of a particles. The ...

Energy Technology Data Exchange (ETDEWEB)

Poster session: Abstract is full text. Track membranes are thin polymer foils irradiated by heavy ions. The defects created by the heavy ions are located along the ions trajectory, the track. It is possible to open channels by etching with a chemical agent. These channels are very uniform. Small Angle Scattering (of X rays and neutrons) give global information about the characteristics of the channel shape. As the nanochannels are strictly parallel, an excellent sample orientation is required to obtain interpretable spectra. Then shoulders due to the oscillations of the Bessel function (radial part of the channel shape Fourier transform) are easily seen in the scattered intensity in the PXY data treatment software of SAS spectra allow to determine the channel diameter with its dispersion law, to demonstrate the existence of a wall thickness with a linearly varying density, and to assess the roughness. ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

Intensities of {gamma}-transitions emerging from the EC decay of {sup 203}Pb were measured precisely. The obtained relative {gamma}-intensities are 100%(279.2keV), 4.14+-0.08%(401.3keV) and 0.932+-0.022%(680.5keV). The 279.2 and 680.5keV level feeding {beta}-branching ratios were deduced to be 95.3+-0.1 and 4.7+-0.1% respectively. {sup 203}Pb is suggested for calibration purposes. (author).

Energy Technology Data Exchange (ETDEWEB)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A ...

International Nuclear Information System (INIS)

We present FIB-lithography methods for rapid and cost-effective prototyping of metal structures covering the deep-submicron- to the millimeter-range in a single lithography cycle. Focused ion beam (FIB) systems are widely used in semiconductor industry and research facilities for both analytical testing and prototyping. A typical application is to apply electrical contact to micron-sized sensors/particles by FIB induced metal deposition. However, as for E-beam lithography, patterning times for large area bonding pads are unacceptably long, resulting in cost-intensive prototyping. In this work, we optimized FIB lithography processing for negative and positive imaging mode to form metallic structures for large-areas down do the sub-100 nm range. For negative lithography features are defined by implanting Ga"+-ions into a commercial photo resist, without affecting the underlying structures by impinging ions. The structures are ...

International Nuclear Information System (INIS)

A series of separation experiment was performed in order to study a multi-functional spent fuel reprocessing process based on ion-exchange technique. The tertiary pyridine-type anion-exchange resin was used in this experiment and the mixed oxide fuel highly irradiated in the experimental fast reactor ''JOYO'' was used as a reference spent fuel. As the result, "1"0"6Ru + "1"2"5Sb, "1"3"7Cs + "1"5"5Eu + "1"4"4Ce, plutonium, americium and curium could be separated from the irradiated fuel by only three steps of ion-exchange. The decontamination factor of "1"3"7Cs and trivalent lanthanides ("1"5"5Eu, "1"4"4Ce) in the final americium product exceeded 3.9 x 10"4 and 1.0 x 10"5, respectively. The decontamination factor for the mutual separation of "2"4"3Cm and "2"4"1Am was larger than 2.2 x 10"3 for the americium product and, moreover, the content of "1"3"7Cs, trivalent lanthanides and "2"4"3Cm included in ...

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO_2 cover ...