Energy Technology Data Exchange (ETDEWEB)

A new scheme of the longitudinal emittance measurement for high energy negative ion beam is proposed. The energy distribution of the detached electron from the negative ions by the photodetachment process, if the photon energy is almost equal to the electron binding energy of the negative ion (=electron affinity of the atom), reflects that of the original negative ions. Therefore, by introducing the photon in a short width comparing with the bunch width of the negative ion beam, the longitudinal energy distribution of each phase of the beam, that is the longitudinal emittance, can be measured. (author).

Science.gov (United States)

Linearly polarized laser radiation accelerates electrons to very high velocities and these electron form a sheath layer on the rear side of thin targets where preferentially protons are accelerated. When mass-limited targets are used, the lateral transport of the absorbed laser energy is reduced and the accelerating field is enhanced. For targets consisting of two ion species, heavier ions facilitate formation of quasi-monoenergetic bunch of lighter ions. For circularly polarized light, fast electron production is suppressed by the absence of the oscillatory component of the ponderomotive force. Ions are accelerated on the front side by the separation field and very thin foil can be accelerated as one massive quasi-neutral block. As all ion species acquire the same velocity, this acceleration mechanism is preferred for heavier ions.

International Nuclear Information System (INIS)

The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).

Energy Technology Data Exchange (ETDEWEB)

The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10[sup -15] cm[sup 2] in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, the emission factors for ...

International Nuclear Information System (INIS)

We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

International Nuclear Information System (INIS)

The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.

Energy Technology Data Exchange (ETDEWEB)

To suppress space charge blowup in an ion beam passing through a photoneutralizer, it is necessary to introduce some background gas. An analysis is presented of the neutralization of a high-energy, >200-keV negative deuterium ion beam, exposed to photodetachment while in the presence of deuterium. With a gas thickness of <0.01 Torr.cm, the neutral fraction in the output beam is found to be about the same as that gotten from the photoneutralizer operating in vacuum. Neutral atom beam injection for plasma heating is discussed.

Energy Technology Data Exchange (ETDEWEB)

We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

International Nuclear Information System (INIS)

Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, ...

International Nuclear Information System (INIS)

We have shown that energy contamination introduced by ion beam deceleration technology that is used to increase the beam currents available for low energy boron implants, can affect fabricated junctions adversely. A 4 keV "1"1B beam is extracted and retarded by a potential of -3.5 keV for 0.5 keV "1"1B implantation, or by a potential of -3.8 keV for 0.2 keV "1"1B implantation. Intentional beam contamination was introduced by turning off the retarding potential to allow the 4 keV "1"1B ions to irradiate Si wafers directly. The percentage of contamination, at levels of 0.1%, 0.2% and 0.3% was introduced. Rapid thermal annealing of all the implanted samples was performed under N_2 ambient at 1050 deg. C for 1 s. The dopant tail profiles themselves are not significant if the contamination levels are low. However, the much ...

International Nuclear Information System (INIS)

The first long pulse production of high power D"- ion beams has been demonstrated in the JT-60 U negative ion sources, each of which was designed to produce 22 A, 500 keV D"- ion beams. Voltage holding capability and the grid power loading were examined for long pulse production of high power D"- ion beams. From the correlation between voltage holding and the light intensity of cathodoluminescence from the Fiber Reinforced Plastic insulators, the acceleration voltage for stable voltage holding capability was found to be less than 320-340 kV where the light was sufficiently suppressed. By tuning the extraction voltage, the grid power loadings in the ion sources were decreased to the allowable levels for long pulse injection without a significant reduction of the beam power. After tuning the acceleration and extraction voltages, D"- ion beams ...

International Nuclear Information System (INIS)

Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si"+ "+ FIB ...

International Nuclear Information System (INIS)

Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.

Energy Technology Data Exchange (ETDEWEB)

We have developed a novel technique for measurements of low energy (p,alpha) reactions using heavy ion beams and a differentially-pumped windowless gas target. We applied this new approach to study the 183 keV resonance in the 17O(p,alpha)14}N reaction. We report a resonance energy (center-of-mass) of 183.5{+0.1}{-0.4} keV, a resonance strength of 1.70 +/- 0.15 meV, and set an upper limit (95\\% confidence) on the total width of the state of < 0.1 keV. This resonance is important for the 17O(p,alpha)14}N reaction rate, and we find that 18F production is significantly decreased in low mass ONeMg novae but less affected in more energetic novae. We also report the first determination of the stopping power for oxygen ions in hydrogen gas near the peak of the Bragg curve (E=193 keV/u) to be (63+/-1)e-15 eV-cm2.

Energy Technology Data Exchange (ETDEWEB)

The use of nitrogen ion implantation to increase the surface hardness of structural steels is well documented. Traditionally this involves the use of high energy nitrogen ion beams (approximately 100 keV), with a relatively low beam current density because high energy beams are necessary to produce the required penetration into the material to achieve a significant depth of hardened material. Hardening needs to occur in a region whose size is comparable with the scale of the deformation associated with the tribocontact. 100 keV nitrogen ions typically penetrate into steels only about 0.1 {mu}m and the range of possible tribological applications is thus restricted by this shallow treatment depth. In plasma nitriding processes the nitrogen ions approach the substrate with much lower energies but the ion currents are sufficiently high to cause ...

International Nuclear Information System (INIS)

Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle texture, while the ...

Science.gov (United States)

Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, ...

Energy Technology Data Exchange (ETDEWEB)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the ...

International Nuclear Information System (INIS)

N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. ...

Energy Technology Data Exchange (ETDEWEB)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ...

Energy Technology Data Exchange (ETDEWEB)

A large negative ion source for JT-60U produces high current ion beam from a wide extraction area of 45 cm x 110 cm. On the other hand, a cross-sectional area of the negative ion based neutral beam (NNB) injection port on JT-60U is narrow, about 50 cm x 60 cm. In order to inject the neutral beam at a high geometric efficiency, i.e. to suppress beam loss in the beamline, it is necessary to steer the beam for both compensation of undesirable beam deflection in extractor and focusing of the beam. For the JT-60U, two methods are provided for the required beam steering. Among them the results of beam steering experiment by aperture displacement and the design study are summarized in the present report. The experiment was carried out with 400 keV negative ion source, which has the three stage accelerator of similar structure as the JT-60U ion source, at Negative ...

Energy Technology Data Exchange (ETDEWEB)

In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed ...

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

British Library Electronic Table of Contents (United Kingdom)

Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.

International Nuclear Information System (INIS)

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

Science.gov (United States)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.

Energy Technology Data Exchange (ETDEWEB)

The development of high energy (> 150 keV) neutral beams for heating and fueling magnetic fusion devices depends on the ability to produce well-collimated negative ion beams. The double capture charge-exchange technique is a known, scalable method. In order to maximize the overall efficiency of the process and to achieve the desired beam characteristics, it is necessary to examine the optical qualities of the beams as well as the total efficiency of beam production. A combined modeling and experimental study of the angular scattering effects in negative ion formation and loss processes has therefore been undertaken.

International Nuclear Information System (INIS)

We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the ...

Energy Technology Data Exchange (ETDEWEB)

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

Energy Technology Data Exchange (ETDEWEB)

For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black ...

Energy Technology Data Exchange (ETDEWEB)

Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. Variations in microstructure and hardness of ...

Energy Technology Data Exchange (ETDEWEB)

A technique has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb and Cs). The method is based on the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag or other metal powders. The following intensities are typical of those observed from carbonate samples subjected to approx. = 3 keV cesium ion bombardment: Li/sup -/: greater than or equal to 0.5 ..mu..A; Na/sup -/: greater than or equal to 0.5 ..mu..A; K/sup -/: greater than or equal to 0.5 ..mu..A; Rb/sup -/: greater than or equal to 0.5 ..mu..A; Cs/sup -/: greater than or equal to 0.2 ..mu..A.

International Nuclear Information System (INIS)

P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

International Nuclear Information System (INIS)

We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.

International Nuclear Information System (INIS)

The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.

Energy Technology Data Exchange (ETDEWEB)

Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.

Energy Technology Data Exchange (ETDEWEB)

An overview of particle and photon beam bunch length measurements is presented in the context of free-electron laser (FEL) challenges. Particle-beam peak current is a critical factor in obtaining adequate FEL gain for both oscillators and self-amplified spontaneous emission (SASE) devices. Since measurement of charge is a standard measurement, the bunch length becomes the key issue for ultrashort bunches. Both time-domain and frequency-domain techniques are presented in the context of using electromagnetic radiation over eight orders of magnitude in wavelength. In addition, the measurement of microbunching in a micropulse is addressed.

Energy Technology Data Exchange (ETDEWEB)

Recent experiments have explored the use of a free-electron laser (FEL) as a buncher for a microwave two-beam accelerator, and the subsequent driving of a standing-wave rf output cavity. Here the authors present a deeper analysis of the longitudinal dynamics of the electron bunches as they are transported from the end of the FEL and through the output cavity. In particular, the authors examine the effect of the transport region and cavity aperture to filter the bunched portion of the beam.

Energy Technology Data Exchange (ETDEWEB)

Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-{Tc} superconducting lines as narrow as 0.8 {mu}m have been fabricated from epitaxial YBa{sub 2}Cu{sub 3}O{sub 7 {minus} {ital y}} films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 {mu}m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 {times} 10{sup 4} A/cm{sup 2} at 77.3 K. Maskless etching was carried out using 130-keV au{sup +} focused ion-beam (FIB) with a 0.1-{mu}m-diameter beam. A 50-nm-thick film was patterned into 0.3-{mu}m-wide lines at a dose of 5 {times} {sup 16} ions/cm{sup 2}. In comparison with Ar IBE, Cl{sub 2} reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. ...

Energy Technology Data Exchange (ETDEWEB)

We propose and analyze a novel regenerative amplifier free electron laser (FEL) to produce fully coherent x-ray pulses. The method makes use of narrow-bandwidth Bragg crystals to form an x-ray feedback loop around a relatively short undulator. Self-amplified spontaneous emission (SASE) from the leading electron bunch in a bunch train is spectrally filtered by the Bragg reflectors and is brought back to the beginning of the undulator to interact repeatedly with subsequent bunches in the bunch train. The FEL interaction with these short bunches not only amplifies the radiation intensity but also broadens its spectrum, allowing for effective transmission of the x-rays outside the crystal bandwidth. The spectral brightness of these x-ray pulses is about two to three orders of magnitude higher than that from a single-pass SASE FEL.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are ...

International Nuclear Information System (INIS)

A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...

International Nuclear Information System (INIS)

A mass separated focused ion beam (FIB) is a very useful tool to fabricate nanostructures by writing implantation within an ion beam synthesis process. In these investigations the IMSA-OrsayPhysics FIB, equipped with a Co_3_6Nd_6_4 alloy liquid metal ion source, was applied. Si(100) and (111) wafers were implanted with 60 keV Co"+"+ ions in the dose range of 2 . 10"1"6 to 2 . 10"1"7 cm"-"2. Implantation parameters were investigated, like pixel dwell time, relaxation time (time between two cycles), dose rate as well as the pixel overlapping factor. The subsequent annealing was done in a two step process, namely 600 deg. C for 60 min and 1000 deg. C for 30 min in a N_2 ambient. The results obtained by SEM investigations in terms of continuous nanowire structures following the direction and interrupted CoSi_2 pattern in the direction show a clear dependence on the time scale as well ...

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Recent results of the experiments at GOL-3 facility are presented. Plasma with a density of 1014...1016 cm-3 is confined in a 12-meter-long solenoid, which comprises 55 corrugation cells with mirror ratio Bmax/B min=4.8/3.2 T. The plasma is heated up to 2...4 keV temperature by a high power relativistic electron beam (?1 MeV, ? 330 kA, ?8?s, ?120 kJ) injected through one of the ends. Mechanism of experimentally observed fast ion heating, issued of plasma stability and confinement are discussed.

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Recent studies have provided data that make it possible to estimate the efficiency and cost of future beamlines using a chemical oxygen-iodine laser as a neutralizer. These studies indicate that a 400-keV neutral deuterium beam of more than 20 A will operate at an efficiency >60%, with the capital cost of the neutralizer at less than $2/W of neutral beam output. Beamlines of lower current and less energy will operate at poorer efficiencies and higher neutralizer costs per watt of neutral beam. These are estimates. As they are very sensitive to changes in the assumptions from which they were derived, they must be used with some caution. Additional studies are expected to provide more reliable estimates.

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The paper describes a concept of extracting fusion power from D-{sup 3}He fueled IEC (Inertia Electrostatic Configuration) devices. The fusion system consists of a series of fusion modules and direct energy converters at an end or at both ends. This system of multiple units is linear and is connected by a magnetic field. A pair of coils anti-parallel to the magnetic field yields a field-null domain at the center of each unit as required for IEC operation. A stabilizing coil installed between the coil pairs eliminates the strong attractive force between the anti-parallel coils. Accessible regions for charged particle trajectories are essentially isolated from the coil structure. Thus, charged particles are directed along magnetic field lines to the direct energy converter without appreciable losses. A direct energy converter unit designed to be compatible to this unique system is also described. It basically consists of a separator and a traveling wave converter. A separator separates ...

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Several different aspects of the influence of the target backing on in-beam electron spectra following compound nuclear reactions induced by accelerated ions at tandem energies irradiating backed targets are discussed in detail. This discussion is illustrated by a few typical examples, such as "1"2C"5"+ and "3"1P"1"0"+ beams at 4 MeV/u bombarding Sn(+Be), Sn(+Au), Pb(+C) backed targets. Moreover, the relative influence of electron backscattering, electron Doppler shift and Doppler broadening as well as #delta#-electron emission on the low energy electron spectra (E_e#<=#100 keV) obtained under such conditions are investigated in the frame of the available experimental data. (orig.).

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The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.

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He ions incident at grazing angles on Cu(110) and Ni(110) surfaces are neutralised into triplet and singlet states, of which the 3p, 3d and 4d upper states are accessible to optical spectroscopy. In the energy range from 500 eV to 15 keV no significant energy dependence of the relative intensities of singlet and triplet lines was observed for scattering on Cu(110). The intensities from Ni(110) are higher and the singlet to triplet intensity ratio of the 3d to 2p transition is about 6% smaller than that from Cu(110). The results can be explained well by assuming resonant charge capture into excited He and intermediate formation of negative He"- states. (orig.).

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An 80 keV, 3.6 MW neutral beam injection system has recently been installed on Doublet III, and the installation of a second system is scheduled within several months. Armor plate consisting of /approximately equals/100 graphite tiles (10 cm x 10 cm) coated with TiC has been plated over portions of the inner vacuum wall lying in the line of sight of the ion sources. In order to monitor the condition of the armor plate an infrared camera and a set of optical pyrometers have been installed alongside the beamline and view the armor plate through a CaF/sub 2/ window. The pyrometers measure the temperature of the armor plate associated with the maximum of the intensity distribution of each ion source.

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We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.

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Power extraction using a dielectric-loaded (DL) waveguide is a way to generate high-power radio frequency (RF) waves for future particle accelerators, especially for two-beam-acceleration. In a two-beam-acceleration scheme, a low-energy, high-current particle beam is passed through a deceleration section of waveguide (decelerator), where the power from the beam is partially transferred to trailing electromagnetic waves (wakefields); then with a properly designed RF output coupler, the power generated in the decelerator is extracted to an output waveguide, where finally the power can be transmitted and used to accelerate another usually high-energy low-current beam. The decelerator, together with the RF output coupler, is called a power extractor. At Argonne Wakefield Accelerator (AWA), we designed a 7.8GHz power extractor with a circular DL waveguide and tested it with single electron bunches and bunch trains. The output RF frequency (7.8GHz) ...

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With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga"+ focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is expected to influence the ...

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A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ...

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A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess ...

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We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial ...

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Coded imaging techniques using thick, micro-Fresnel zone plates as coded apertures have been used to image x-ray emissions (2-20 keV) and 3.5 MeV Alpha particle emissions from laser driven micro-implosions. Image resolution in these experiments was 3-8 ..mu..m. Extension of this coded imaging capability to higher energy x-rays (approx. 100 keV) and more penetrating charged particles (e.g. approx. 15 MeV protons) requires the fabrication of very thick (50-200 ..mu..m), high aspect ratio (10:1), gold Fresnel zone plates with narrow linewidths (5-25 ..mu..m) for use as coded aperatures. A reactive ion etch technique in oxygen has been used to produce thick zone plate patterns in polymer films. The polymer patterns serve as electroplating molds for the subsequent fabrication of the free-standing gold zone plate structures.

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When energetic bunches of electrons traverse an undulator field, they can spontaneously emit radiation both coherently and incoherently. Although it has generally been assumed that undulator radiation is incoherent at wavelengths short compared to the longitudinal size of the electron bunch, several recent observations have proved this assumption false. Furthermore, the appearance of coherent radiation is often accompanied by a significant increase in radiated power. Here we report observations of strongly enhanced coherent spontaneous radiation together with direct measurements, using transition radiation techniques, of the electron distributions responsible for the coherent emission. We also report demonstrated enhancements in the predicted spontaneous radiated power by as much as 6x10"4 using electron bunch compression. copyright 1996 American Institute of Physics.

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One of the main challenges for a high energy #gamma##gamma# collider is the high repetition rate required for the laser-electron-beam collisions to convert into high energy gamma beams. State-of-the-art, high power lasers have a much lower repetition rate than that of the electron pulses. It is therefore highly desirable that the same laser pulse can be reused. As an example, for NLC where beams collide at 120 Hz, within each collision cycle there are 90 electron bunches separated by 1.4 ns between successive bunches. We show, by invoking a recently invented laser optical box, that the laser pulses can be reused for the entire train of bunches within each collision cycle. ((orig.)).

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Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from ...

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Effects of helium and hydrogen production on irradiation hardening of martensitic steel F82H (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) were examined by dual or triple beam experiments. The effects of tempering and cold working were also examined. The irradiations were performed at about 500degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The value of appm-He/dpa for the dual ion beams was about 15, and the values of appm-He/dpa and appm-H/dpa for the triple ion beams were 15 and 15 (or 150), respectively. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. Irradiation softening and hardening was observed in F82H-std, F82H+20%CW and a non-tempered F82H steels irradiated at about 500degC to 18 and 50 dpa, respectively, by dual ion beams. The hardness ...

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The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological ...

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A time-of-flight mass spectrometer has been constructed to measure the energy spectra of particles scattered by 10"0 with primary energies between 200 eV and 15 keV. The energy resolution #DELTA#E/E of the system is between 0.1 and 0.4%. Energy spectra of scattered molecules and their dissociation products are shown for 570 eV H_2"+ and 4430 eV N_2"+ as projectiles. Electron capture into unbound states of the neutral molecule, with perhaps some contribution from mutual scattering within the molecule, appears to explain the observed dissociation product energy spectra peak widths. (orig.).

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We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

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The Sputter coefficient of accelerated CO{sub 2} cluster ions hitting surfaces of various materials is investigated. For copper it varies proportional to the 2nd power of the energy between 155 and 260 keV. The rate of erosion for different target materials varies by two orders of magnitude from tungsten to PMMA. Diamond is eroded fairly quickly, while aluminum is eroded less than corundum (Al{sub 2}O{sub 3}). No simple correlation of the sputter coefficient on the bulk material properties is found. For copper the angular distribution of sputtered material is measured and found to be following roughly a cosine distribution. By using masks different microstructures have been produced in cobalt-samarium magnets, diamond and glass. (orig.)

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The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

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The intermediate valent behaviour of YbPd_2Si_2 has been studied under pressure in the temperature range from 1.2 K to 90 K by using the 84 keV Moessbauer transition in "1"7"0Yb. At 54 kbar and 4.2 K we obtain an increase of the electric field gradient (EFG) by a factor of #approx =# 3. In addition, the EFG varies strongly with temperature, in contrast to the behaviour at ambient pressure. At 1.2 K a change of the hyperfine pattern is observed indicating a magnetic character of the Yb ion. These results provide evidence of a pressure induced change of the valence state close to 3+. (orig.).

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A new principle of particle trapping in the simple spherical cavity using both electric and magnetic components of radiofrequency electromagnetic field is proposed. The electric component of H {sub 12} oscillating mode drives the fast particle oscillations, while the magnetic component synchronously bends the trajectories to the cavity center. A specially developed theory of particle stability predicts dense and energetic electron cluster in the trap. Numerical simulations of particle dynamics in the complete electromagnetic field taking into account both space charge and particle-induced magnetic field are in good agreement with the analytic results, giving a density of 2.6*10{sup 1} electrons/cm{sup 3} and an average kinetic energy of around 30 keV at an operating frequency of 3 GHz. Being used at lower frequency, spherical cavity can trap protons and heavier ions too, but with lower density and kinetic energy.

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We report the homodyne detection of phase modulation sidebands induced on a laser beam by a coherently bunched electron beam. This provides a sensitive and nonperturbing measurement of complex Fourier time series components of the electron density. A proof-of-principle measurement of the microwave frequency component of electron density in a crossed-field device, which agrees well with a calculation of the same quantity, is reported.

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Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial ...

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Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ion dose ...

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We have demonstrated that optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-UV light with photon energies greater than the band gap energy of approx. equal to 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform UV illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of >= 100:1 and spatial resolution of approx. equal to 10 #mu#m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. equal to 100 mJ/cm"2) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. We have recently found from studies of H, He and Ar implanted PLZT that the photosensitivity can ...

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In this paper the authors present a design study on the longitudinal dynamics of a relativistic klystron two-beam accelerator (RK-TBA) scheme which has been proposed as a power source candidate for a 1 TeV next linear collider (NLC). They address the issue of maintaining stable power output at desired level for a 300-m long TBA with 150 extraction cavities and present their simulation results to demonstrate that it can be achieved by inductively detuning the extraction cavities to counter the space charge debunching effect on the drive beam. They then carry out simulation study to show that the beam bunches desired by the RK-TBA can be efficiently obtained by first chopping an initially uniform beam of low energy into a train of beam bunches with modest longitudinal dimension and then using the open-quotes adiabatic captureclose quotes scheme to bunch and accelerate these beam bunches into tight ...

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... kev range 10-100 kev range 100-1000 man mev range 01-10 personnel

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The use of the ratio of the characteristic intensity to the continuum background intensity (P/B ratio) of the X-ray spectrum for a quantitative ion microprobe (IMP) or PIXE (particle induced X-ray emission) analysis of thin biological specimens was proposed previously. The IMP analysis of thick biological specimens is also of considerable practical use. In this paper, the possibility of using the P/B ratio to quantify minor elements in thick biological specimens is investigated. The epoxy resin based standards with gradual concentrations of KCNS up to 0.6 mol/kg and NBS bovine liver were analyzed by a 27 MeV {alpha} particle microprobe. The measured peak to background ratios (between 4.4 to 5.7 keV) agreed well with the theoretical calculations. The calculations showed that the concentration dependence of the P/B ratios was determined mainly by the absorption of X-rays in specimens. The results indicate that the P/B method is useful for IMP ...

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Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail ...

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In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation loop were observed from ...

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Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and ...

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The inelastic energy losses for single collisions of Xe"+ ions with Xe targets have been measured for incident ion energies from 0.3 to 1.2 MeV and for scattering angles from 3"0 to 20"0. The energy losses were found to range from 1 to 11 keV with distinct steps at distances of closest approach of 0.22 and 0.12 A. By comparing these data with earlier ionization data by the same authors these steps are shown to be caused by M-shell excitation. Other excitations observed in the ionization data may be attributed to N-shell excitation. The distances of closest approach at which these excitations occur agree well with calculations by Eichler and Wille and co-workers, giving further evidence of the usefulness of Fano and Lichten's one-electron molecular model and these calculations.

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In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.

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A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

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A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5x10"1"3 cm"-"2 Si into (001)Si, followed by a high temperature (815 degree C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the open-quote open-quote+1 close-quote close-quote model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. copyright 1996 American Institute ...

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After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and ...

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In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO_2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam ...

International Nuclear Information System (INIS)

Coherent spontaneous radiation has now been observed in several FELs, and is a subject of great importance to the design of self-amplified spontaneous emission (SASE) devices. We report observations of coherent spontaneous radiation in both FIREFLY and the mid-infrared FEL at the Stanford Picosecond FEL Center. Coherent emission has been observed at wavelengths as short as 5 microns, and enhancement over incoherent levels by as much as a factor of 4x10"4 has been observed at longer wavelengths. The latter behavior was observed at 45 microns in FIREFLY with short bunches produced by off-peak acceleration and dispersive compression. We present temporal measurements of the highly bunched electron distributions responsible for the large enhancements, using both transition radiation and energy-phase techniques.

International Nuclear Information System (INIS)

A microwave hydrogen ion source was developed to improve reliability, and to increase operation time of proton linac application systems. The ion source needs no filament in the discharge chamber, which leads to better reliability and less maintenance time. The developed source produced a maximum hydrogen ion beam current of 70 mA (high current density of 360 mA/cm2, beam energy of 30 keV) with a 5 mm diam extraction aperture and 1.2 kW microwave power. The proton fraction was increased with an increase in rf power and reached around 90% at 1 kW. Measured 90% beam normalized emittance was 0.4 #pi# mm mrad. Rise times of rf power and beam current to 90% of the final values were about 30 and 35 #mu#s, respectively, at a pulse operation mode with 400 #mu#s pulse width and 100 Hz repetition rate. The dynamic range of beam currents was enlarged (3-63 mA) in the pulse mode with a modified rf wave form to ...

Energy Technology Data Exchange (ETDEWEB)

Operating the Stanford Linear Collider (SLC) at 120Hz repetition rate requires the presence of two bunches in both the electron and the positron damping ring. The {pi}-mode instability, a coupled bunch instability where the two bunches oscillate with a phase difference of 180{degrees}, had been observed in both rings with low current thresholds of 7{sup *}10{sup 9} particles per bunch. To avoid the instability, the RF system had to be operated in ways which in general reduced the cavity gap voltages and required constant operational attention. For the 1992 running cycle a passive cavity was installed and successfully tested. It is tuned to the frequency of the lower synchrotron oscillation sideband of an odd revolution harmonic. The impedance of the cavity then damps {pi}-mode oscillations very similar to the Robinson damping provided by the main RF cavities which damps O-mode synchrotron oscillations. ...

Energy Technology Data Exchange (ETDEWEB)

The Linac Coherent Light Source (LCLS) is a SASE x-ray Free-Electron Laser (FEL) based on the final kilometer of the Stanford Linear Accelerator. One of the most critical diagnostic devices is the bunch length monitor (BLM), which is to be installed right after each compressor utilizing coherent radiation from the last bending magnet. We describe the components and the optical layout of such a BLM. Based on the setup geometry, we discuss some issues about the coherent radiation signal.

International Nuclear Information System (INIS)

Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass ...

Energy Technology Data Exchange (ETDEWEB)

Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the ...

Energy Technology Data Exchange (ETDEWEB)

Austenitic stainless steels have been implanted with molybdenum ions (Mo[sup +], 100 keV, 2.5 x 10[sup 16] atoms cm[sup -2]). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of [approx] 1000 A with a maximum molybdenum concentration of [approx] 9 at.% Mo located at [approx] 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H[sub 2]SO[sub 4] have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and non-implanted alloys and the thicknesses of the films are similar. On the ...

CERN Document Server

It is widely accepted that the prompt transient signal in the 10 keV - 10 GeV band from gamma-ray bursts (GRBs) arises from multiple shocks internal to the ultra-relativistic expansion. The detailed understanding of the dissipation and accompanying acceleration at these shocks is a currently topical subject. This paper explores the relationship between GRB prompt emission spectra and the electron (or ion) acceleration properties at the relativistic shocks that pertain to GRB models. The focus is on the array of possible high-energy power-law indices in accelerated populations, highlighting how spectra above 1 MeV can probe the field obliquity in GRB internal shocks, and the character of hydromagnetic turbulence in their environs. It is emphasized that diffusive shock acceleration theory generates no canonical spectrum at relativistic MHD discontinuities. This diversity is commensurate with the significant range of spectral indices discerned in ...

International Nuclear Information System (INIS)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms ...

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

International Nuclear Information System (INIS)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers. copyright 1999 ...

International Nuclear Information System (INIS)

This work is concerned with the development and application of ion implantation techniques for improving the corrosion resistance of zircaloy-4. The corrosion resistance in nitrogen implanted zircaloy-4 under a 120 keV nitrogen ion beam at an ion dose of 3 x 10"1"7 cm"-"2 depends on the implantation temperature. The characteristics of surface oxidation and corrosion resistance were analyzed with the change of implantation temperature. It is shown that as implantation temperature rises from 100 to 724 C, the colour of specimen surface changes from its original colour to light yellow at 100 C, golden at 175 C, pink at 300 C, blue at 440 C and dark blue at 550 C. As the implantation temperature goes above 640 C, the colour of surface changes to light black, and the surface becomes a little rough. The corrosion resistance of zircaloy-4 implanted with nitrogen is sensitive to the implantation temperature. ...

International Nuclear Information System (INIS)

Effect of helium and hydrogen production on radiation-hardening of F82H irradiated by dual or triple beam condition were investigated. The specimens used were four types of ferritic martensitic steels of F82H-std (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) steels tempered at 750degC for 60 minutes, 20% cold worked F82H steel, F82H tempered for 10 minutes and non-tempered F82H steels. The irradiation was performed at 450degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The ratios of He (appm)/dpa and H(appm)/dpa were 15 nad 15 (or 150) for dual and triple ion beams. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. The hardness in these F82H steels irradiated at 450degC to 18 dpa under triple beam irradiation was harder than that under dual beam irradiation. Irradiation softening and hardening ...

Science.gov (United States)

SN 1987A: Soft X-Ray Intensity Ratio. 2002-12 to 2000-12. 2005-7 to 2002-12. Contours: 2002-12. (0.5 2 keV). (0.5 2 keV). Contours: 2005-7 ...

International Nuclear Information System (INIS)

... charges energy levels gamma spectra half-life isomeric nuclei kev range

CERN Document Server

The PEP-II storage rings at SLAC each have 3492 'buckets' into which electrons and positrons can be injected into the high- and low-energy rings. Equipment to measure the currents of all the individual buckets was originally provided by the Lawrence Berkeley Laboratory and is implemented in VXI-based hardware. Data from this equipment as well as high precision direct current measurement provide the hard data for the Bunch Injection Controller. A large number of parameters determined by injection design considerations as well as set by operators for different circumstances are also used by the software algorithms to determine the desired bucket injection order and charge quantity for each injection pulse. These requests are then passed on to the venerable SLAC master pattern generator, which provides beams for other applications as well. This highly visible and highly successful system is implemented using the EPICS toolkit, and fits well into the merged SLAC ...

International Nuclear Information System (INIS)

In this article we derive longitudinal impedance and wake function for an undulator setup with arbitrary undulator parameter, taking into account a finite transverse size of the electron bunch. Earlier studies considered a line density-distribution of electrons instead. We focus our attention on the long-wavelength asymptote (compared with resonance wavelength), at large distance of the electron bunch from the undulator entrance compared to the overtaking length, and for large vacuum-chamber size compared to the typical transverse size of the field. These restrictions define a parameter region of interest for practical applications. We calculate a closed expression for impedance and wake function that may be evaluated numerically in the most general case. Such expression allows us to derive an analytical solution for a Gaussian transverse and longitudinal bunch shape. Finally, we study the feasibility of current-enhanced ...

International Nuclear Information System (INIS)

The electron-beam qualities with and without free electron laser (FEL) oscillations were investigated in the compact storage ring NIJI-IV. The peak-electron density in a bunch was suppressed by beam instabilities, so that it was limited to about 1.0 x 10"1"7 m"-"3. The maximum FEL gain estimated for 215 and 300 nm using a well-known one-dimension theory was about 2.8% and 4.6%. The cavity loss at 300 nm was evaluated to be about 2% from the threshold beam current. The bunch length and energy spread with FEL oscillations increased by 1.3 times or more due to bunch heating. The ratio of the FEL gain to a cavity loss estimated from the beam qualities with and without FEL oscillations was almost in accord with the ratio evaluated directly with the measured data of the FEL gain and the cavity loss. (author)

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO_2 cover ...

Energy Technology Data Exchange (ETDEWEB)

The performance of bunch-feedback systems based on two-tap FIR filters is discussed, particularly for transverse cases. Since they are the simplest type of FIR digital filters, the two-tap FIR filters should be suited to systems that require a very fast processing speed. However, in these feedback systems, a bunch must turn along a ring several times from the position-measurement to feedback kicking. Within these turns, irregular phase-jumps in the betatron motion can occur, due to several causes, such as the wake forces and beam-beam force. The discussion given in this paper is focussed on the effect of beam-beam collisions on these feedback systems. Based on linear theory and simulation studies, it has been found that these feedback systems can work with good performance, even under the influence of a strong beam-beam force. (author)

CERN Document Server

TRANSVERSE EMITTANCE PRESERVATION IS A MAJOR CONCERN OF THE LHC INJECTOR CHAIN. MINIMISATION OF THE BLOW-UP DUE TO MISMATCH AT INJECTION INTO THE SPS IS THEREFORE MANDATORY. WHILE THE TRANSVERSE POSITIONN OF THE BEAM IN THE SPS INJECTION LINE IS MONITORED BUNCH BY BUNCH BY AN OTR (OPTICAL TRANSITION RADIATION) SCREEN AND A FAST CCD (CHARGED COUPLED DEVICE) CAMERA, THE PHASE SPACE MATCHING AT INJECTION IS MONITORED BY AN OTR BASED MISMATCH MONITOR IN THE SPS RING. ORTHOGONAL TUNING KNOBS WERE DEVELOPED TO TUNE INDEPENDENTLY TWISS PARAMETERS, DISPERSION AND DISPERSION DERIVATIVE. IN THIS PAPER WE DESCRIBE THE MISMATCH CORRECTION MECHANISM AS WELL AS THE TWO MONITORING SYSTEMS. WE REPORT ON FIRST MEASUREMENTS WHICH WERE CARRIED OUT DURING THE 1998 SPS RUN.

Energy Technology Data Exchange (ETDEWEB)

The LCLS, a Free-Electron Laser (FEL) designed for operation at a first harmonic energy of 300 eV ({lambda} {congruent} 40{Angstrom}) in the Self-Amplified Spontaneous Emission (SASE) regime, will utilize electron bunches compressed down to durations of <0.5ps, or lengths of <150 {mu}. It is natural to inquire whether coherent radiation of this (and longer) wavelength will constitute a significant component of the total coherent output of the FEL. In this paper a determination of a simple upper bound on the IR that can be generated by the compressed bunches is outlines. Under the assumed operating parameters of the LCLS undulator, it is shown that that IR component of the coherent output should be strongly dominated by the x-ray component.

British Library Electronic Table of Contents (United Kingdom)

Effect of oil palm empty fruit bunch (OPEFB) fiber and poly(methyl acrylate) grafted OPEFB on several mechanical properties of poly(vinyl chloride)/epoxidized natural rubber (PVC/ENR) blends were studied. The composites were prepared by mixing the fiber and the PVC/ENR blends using HAKEE Rheomixer at the rotor speed of 50 rpm, mixing temperature 150degreeC, and mixing period of 20 min. The fiber loadings were varied from 0 to 30% and the effect of fiber content in the composites on their ultimate tensile strength (UTS), Youngs modulus, elongation at break, flexural modulus, hardness, and impact strength were determined. An increasing trend was observed in the Youngs modulus, flexural modulus, and hardness with the addition of grafted and ungrafted fiber to the PVC/ENR blends. However the i...

Energy Technology Data Exchange (ETDEWEB)

The properties of the triplet of low-lying states in {sup 101}Mo have been studied through spectroscopy of the {gamma} radation following thermal neutron capture in {sup 100}Mo and {beta}-decay of {sup 101}Nb and through a measurement of the proton angular distributions in the {sup 100}Mo(d, p) reaction with 14 MeV deuteron energy. The half-lives of the 13.5 keV state and the 57.0 keV 5/2{sup +} state have been measured as 226(7) and 133(7) ns, respectively. These values and the quadrupole/dipole mixing ratios of the 13.5 keV and 43.5 keV transitions yield spin and parity 3/2{sup +} for the 13.5 keV level. The E2 components in the 13.5 (3/2{sup +}->1/2{sup +}) and 43.5 keV (5/2{sup +}->3/2{sup +}) transitions are {le} 8x10{sup -4} and 54(9)%, respectively. The possibility of an additional state near to the 57.0 keV level is discussed. ...

International Nuclear Information System (INIS)

In 1999, the plasma parameters of reversed shear (RS) plasmas had been extended in 1) DT-equivalent fusion power gain Q_D_T"e"q - 0.5 (n_D(0)#tau#_ET_i(0) - 4x10"2"0 m"-"3#centre dot#keV#centre dot#s) for 0.8 s and 2) full non-inductive current drive with 80% of the bootstrap current fraction. Physics of the internal transport barriers (ITBs) in RS plasmas, including the energy transport and the formation of ITB, were extensively studied. A nearly full current drive (92% non-inductively) was obtained with negative ion based neutral beam (NNB) injection (360 keV, 3.4 MW) in a high #beta#_p H-mode plasma (I_p=1.5 MA, B_T=3.7 T, q_9_5=4.2) with high plasma performance (#beta#_N=2.4 and H_8_9=2.56). Rise in the central electron temperature (T_e - 9 keV) resulted in the current drive efficiency #eta#_C_D of NNB reached 1.3x10"1"9 A/W/m"2, the highest for the neutral beam current drive. As for the H-mode plasmas, decrease in the ...

International Nuclear Information System (INIS)

We report on a time-resolved measurement of self-amplified spontaneous emission free-electron laser (FEL) pulses. We observed that the spikes in such FEL pulses have an intrinsic positive chirp and the energy chirp in the electron bunch mapped directly into the FEL output. The measurement also provides rich information on the statistics of the FEL pulses.

Science.gov (United States)

The differential cross section measurements for /sup 241/Am, /sup 242m/Am and /sup 243/Am are reviewed in the energy range from 0.5 eV to 10 keV. Parameters extracted from resonance analysis, such as the neutron strength function, the average level spacing, the average capture and fission widths, are compared for the various measurements. The average capture and fission cross sections from 100 eV to 10 keV are directly compared. The status of the data set is discussed with suggestions for further measurements. 24 references.

Science.gov (United States)

... In a HEAO 1 study of active galaxies, principally Seyfert 1s, in the 2, 165 keV energy range, Rothschild et al. ... As discussed by Rothschild et al. ...

International Nuclear Information System (INIS)

... gamma cascades kev range 10-100 lifetime lutetium 171 lutetium 173 lutetium

Science.gov (United States)

The MgF{sub 2} monocrystals were irradiated at room temperature with 390 keV B{sup +} ions up to the fluence of 10{sup 16} cm{sup -2}. The irradiated samples were (isochronally and isothermally) annealed in high vacuum at the temperatures 200 deg. C, 300 deg. C, 400 deg. C, 500 deg. C, 600 deg. C and 700 deg. C for the times ranging from 2-100 hours. After each annealing step, the boron depth distribution was determined using the neutron depth profiling technique. As implanted, the depth distributions of boron exhibited standard Gaussian-like forms, but the evaluated profile parameters, R{sub P} = 960 nm and {delta}R{sub P} = 140 nm, were higher than those calculated using the SRIM code (R{sub P} = 870 nm and {delta}R{sub P} = 115 nm). Annealing at temperatures up to 400 deg. C did not change the depth profiles. Annealing at 600 deg. C, however, led to a one-way gradual transfer of the boron atoms from the site of implantation towards the ...

International Nuclear Information System (INIS)

The concentration of trace elements in brain sections was measured by synchrotron radiation X-ray fluorescence. The relative concentration was calculated by means of the normalization of Compton scattering intensity approximately 22 keV, after the normalization for collecting time of X-ray spectrum and the counting of the ion chamber, and subtracting the contribution of the polycarbonate film for supporting sample. Furthermore, the statistical evaluation of the element distribution in various regions of the brain sections of the 20-day-old rats was tested. For investigating the distribution of elements in the brain of iodine deficient rats, Wistar rats were fed with iodine deficient diet and deionized water (ID group). The rats were fed the same iodine deficient diet, but drank KIO_3 solution as control (CT group). The results showed that the contents of calcium (Ca) in thalamus (TH) and copper (Cu) and iron (Fe) in cerebral cortex (CX) of ID ...

International Nuclear Information System (INIS)

... aromatics barium dienes heat exchangers ion exchange ions kinetic equations

International Nuclear Information System (INIS)

... energy spectra inelastic scattering ion-molecule collisions mass spectrometers

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

The gamma-ray spectrum following neutron capture on /sup 87/Sr was measured at 3 neutron energies: E/sub n/ = thermal, 2 keV, and 24 keV. Gamma rays were detected in a three-crystal Ge(Li)-NaI-NaI pair spectrometer. Gamma-ray intensities deduced from these spectra by spectral unfolding are presented.

Energy Technology Data Exchange (ETDEWEB)

An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.

CERN Document Server

Conceptual Design of Superconducting Quadrupole Arrays for the Heavy-Ion Fusion

International Nuclear Information System (INIS)

Researches on oil palm empty fruit bunch (EFB) fibers and thermoplastic composites have been carried out by many workers in the last decade. The main focus was to enhance the properties of the resultant composites in view of the incompatibility of the two components. Thus, efforts have been made to enhance their properties by using coupling agents, treating the fibers and modifying the matrices. In this study, the effects of electron beam (EB) irradiation and some reactive additives (RAs) on the mechanical properties of EFB-PP (polypropylene) composites were evaluated. Different modes of irradiation were investigated. Mono, di and tri functional of monomers of RAs were used. irradiating PP alone, compared to irradiating the EFB fibers or irradiating both components, gave optimum properties for EFB-PP composites. Further, improvements of the properties of the composites were achieved with the addition of RAs with TMPTA (trymethylol propane triacrylate) giving the ...

British Library Electronic Table of Contents (United Kingdom)

Effect of alkalis (NaOH, KOH and K2CO3) on liquefaction of EPFB (empty palm fruit bunch) biomass liquefaction was investigated under subcritical water conditions in a batch reactor operating at 270degreeC and 20bars for a period of 20min. Catalytic performance and suitable biomass to water ratio that supported higher EPFB conversion, liquid hydrocarbons yield and lignin degradations were screened. Analytical results indicate that maximum of 68wt% liquids were produced along with 72.4wt% EPFB mass conversions and 65.6wt% lignin degradation under 1.0M K2CO3/2:10 (biomass/water) conditions. In comparison, the experiments that were performed in the absence of alkalis yielded only 30.4wt% liquids, converted 36wt% EPFB and degraded 24.3wt% lignin. Furthermore, biomass to water ratios >2:10 decre...

British Library Electronic Table of Contents (United Kingdom)

Poly(3-hydroxybutyrate-co-38mol%-3-hydroxyvalerate) [P(3HB-co-38mol%-3HV)] was produced by Cupriavidus sp. USMAA2-4 in the presence of oleic acid and 1-pentanol. Due to enormous production of empty fruit bunch (EFB) in the oil palm plantation and high production cost of P(3HB-co-3HV), oil palm EFB fibers were used for biocomposites preparation. In this study, maleic anhydride (MA) and benzoyl peroxide (DBPO) were used to improve the miscibility between P(3HB-co-3HV) and EFB fibers. Introduction of MA into P(3HB-co-3HV) backbone reduced the molecular weight and improved the thermal stability of P(3HB-co-3HV). Thermal stability of P(3HB-co-3HV)/EFB composites was shown to be comparable to that of commercial packaging product. Composites with 35% EFB fibers content have the highest tensile st...

International Nuclear Information System (INIS)

An optical klystron is built in the 800 MeV electron storage ring at University of Science and Technology of China for harmonic super-radiation generation. In single bunch operation mode the repetition rate of the spontaneous radiation pulses is about 4.533 MHz, and the repetition rate of the seed laser pulses is about 3 Hz, while the radiation pulse duration is 300 ps. For measuring harmonic radiation a high on/off ratio ICCD is used as an optical switch to reject spontaneous radiation pulses of high repetition rate

CERN Document Server

Charged particle beams in circular accelerators couple with their surroundings through induced electromagnetic fields. This interaction can be described by so-called coupling impedances. In the frequency domain the impedance in connection with the bunch spectrum allows for stability analysis and estimates. However, for simulation codes one usually needs the wakefunction, the equivalent of the impedance in time domain. Recently the transverse impedance of a cylindrical pipe with arbitrary surface impedance was given by L. Vos. An expression for the wakefunction of this transverse resistive wall impedance with inductive bypass is derived here.

International Nuclear Information System (INIS)

We report on the collision of 1.5 ps (FWHM) laser pulses traversing at 17 a short similar 7 ps (FWHM) 46.6 GeV electron bunch. The phase-locked system used to maintain the correct timing of the laser pulses and the appropriate diagnostics are described. The jitter between the laser and electron pulses is determined from the stability of the observed rate of Compton scatters and can be described by a Gaussian distribution with #sigma#_j#approx =#2.2 ps. (orig.).

International Nuclear Information System (INIS)

The effectiveness of the acridines ethidium bromide (EB) and acriflavine in inducing plasmon mutations was compared with the alkylating agents ethyl methanesulphonate (EMS) and diethyl sulphate and to #gamma#-rays. The growth habit (trailing versus bunch) of peanuts (A. hypogaea), controlled by genic-cytoplasmic interactions, was utilized. Breeding tests distinguishing nuclear from plasmon mutations were developed and are described in detail. Plasmon mutations were induced, but there were differences in mutation yields between the cultivars and the mutagens. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

Longitudinal space charge (LSC) force can be a main effect driving the microbunching instability in the linac for an x-ray free-electron laser (FEL). In this paper, the LSC-induced beam modulation is studied using an integral equation approach that takes into account the transverse (radial) variation of LSC field for both the coasting beam limit and bunched beam. Changes of beam energy and the transverse beam size can be also incorporated. We discuss the validity of this approach and compare it with other analyses as well as numerical simulations.

International Nuclear Information System (INIS)

The absolute cross sections of "2"3Na(p,n)"2"3Mg, "2"7Al(p,n)"2"7Si and "3"0Si(#alpha#,n)"3"3S reactions were measured in the incident energy range of 5.05 to 5.80, 5.80 to 6.25 and 3.975 to 6.235 MeV respectively using a spherically shaped 4#pi# neutron detector. In the energy range 5.80 to 7.80 and 6.235 to 11.30 MeV the absolute cross sections of "2"3Na(p,n)"2"3Mg and "3"0Si-(#alpha#,n)"3"3S reactions were determined by optical model calculations. The cross sections of the inverse reactions "2"3Mg(n,p)"2"3Na and "3"3S(n,#alpha#)"3"0Si were also calculated by the same method for the neutron energy range of 10 keV to 7.50 MeV for each reaction. The cross section of the latter reaction in the neutron energy range of 10 keV to 840 keV was also determined from its inverse reaction "3"0Si(#alpha#,n)"3"3S by the application of the detailed balance theorem. The reactions for which the cross sections were determined are of ...

International Nuclear Information System (INIS)

Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the range of the fluorine implant and the ...

Energy Technology Data Exchange (ETDEWEB)

In recent years, the influences of acid rain such as the acidification of lake water, on bio-system by the heavy metals from effluent of soils with acid rain and also on the structural materials of buildings are seriously discussed. Sulfur and nitrogen that are contained in fossil fuels are released into the atmosphere by the fuel combustion as their oxides dissolve in rain drops as sulfite and nitrous ions, where they are further oxidized into sulfate and nitrate ions These ions lower the pH of rain water resulting so-called acid rain. Therefore, it is important to accurately determine these ions in rain water for the investigation of reality of acid rain. However, it is not easy to accurately determine these ions, especially for sulfite ions in rain water, since they are quickly oxidized by the catalytic action of metallic ions such as ...

Energy Technology Data Exchange (ETDEWEB)

There are 13 Electron Beam Ion Sources in operation which produce highly charged ions, up to Th{sup 80+} and Xe{sup 53+}. Most of the sources are used to study these ions under electron impact or when recombining with gaseous or solid targets. That provides an insight into the atomic physics of these highly charged ions and into the physics of the plasma in which such ions can be found. This paper reviews the present knowledge of atomic processes, important in the production of such ions with an EBIS.

International Nuclear Information System (INIS)

The half-value thicknesses, linear and mass attenuation coefficients of biological samples such as bone, muscle, fat and water have been measured at 140, 364 and 662keV ?-ray energies by using the ATOMLABTM-930 medical spectrometer. The ?-rays were obtained from 99mTc, 131I and 137Cs ?-ray point sources. Also theoretical calculations have been performed in order to obtain the half-value thicknesses and, mass and linear attenuation coefficients at photon energies 0.001keV-20MeV for bone, muscle and water samples. The calculated value and the experimental results of this work and the other results in literature are found to be in good agreement.

International Nuclear Information System (INIS)

Neutron capture #gamma#-ray spectra have been measured at 11 average neutron energies from 10 to 530 keV in /sup 88/Sr using a 20 x 15 cm NaI detector with time-of-flight discrimination of background events. The partial radiation widths and the calculated partial valence widths are compared for the strong p-wave resonances at 287 and 321 keV and found to be highly correlated. At these energies, the spectra are dominated by strong transitions to low-lying single particle states, in confirmation of the role of valence capture in the 3p region. However, the data do not support this mechanism at <508> keV.

Energy Technology Data Exchange (ETDEWEB)

A nonneutral /sup 7/Li/sup +/ ion plasma is described in which ion Langmuir waves are observed for the first time. The properties of these waves near the Brillouin density limit are investigated.

International Nuclear Information System (INIS)

The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. According to the coincidence data, the decay scheme was modified. The positions of 221.80, 318.00, 377.90, 452.50, 515.42, 1011.05 and 1759.72 keV transitions have been arranged again, the transition positions of 104.70, 105.95 and 774.15 keV gamma-rays have been assigned for the first time, the positions of 169.00, 590.91, 980.52 and 1431.68 keV transitions have been reconfirmed, the 1508.01 keV gamma-ray was observed simultaneously for the first time and its transition position has been assigned. The #beta#-intensities and the values of log ft of most levels were calculated. (author)

International Nuclear Information System (INIS)

A simulated hull monitoring system based on passive #gamma# ray scanning was set-up in K-01 hot-cell, which consists of a simulated hull basket, a collimator system, a 150 cm"3 HPGe detector and an ORTEC-919 multichannel buffer-computer system. Six different kinds of experimental set-up were established to simulate the variations of #gamma# ray source term distribution (partly concentration) and the variations of matrix density (+46.1%). The experimental results show that the biases of peak area is better than -25.3% for "1"3"7Cs 662 keV #gamma# rays and -18.6% for "1"4"4Ce-"1"4"4Pr 2186 keV #gamma# rays. The hardness of pulse height spectrum is demonstrated to show that the peak area ratio of 2186 keV to 662 keV varies from 380 to 72 when the thickness of lead filter varies form 5 mm to 30 mm. Also studied are the design parameters of collimator system.

Science.gov (United States)

Nov 14, 2009 ... Ring Current electrons from the Fok Ring Current Model are computed using plasma and magnetic field values from the SWMF magnetosphere ...

International Nuclear Information System (INIS)

Two experiments are currently underway to measure the single-particle weak mixing matrix element for the 1064 KeV transition in "2"0"7Pb. One experiment measures the circular polarization of the 1064 KeV gamma ray emitted from an unpolarized source, while the other experiment measures the forward-backward asymmetry of gamma rays emitted from a polarized source. Analysis of the first set of polarized source data yields an upper limit of 46 eV for the single-particle weak mixing matrix element. copyright 1995 American Institute of Physics.

International Nuclear Information System (INIS)

The #gamma#-radiation following thermal neutron capture in "1"0"0Mo has been studied by singles and coincidence measurements. A "1"0"1Mo level scheme has been deduced and is compared with the results of previous (d,p), (n,#gamma#) and "1"0"1Nb decay studies. The existence of the first excited state at 13.51 keV has been confirmed. The present data yield a neutron binding energy of 5398.4 KeV. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

(Sep 1973). United Kingdom Sinanoglu, O. Luken, W. Yale Univ., New Haven,

Energy Technology Data Exchange (ETDEWEB)

Taking the development of large current, negative ion sources which is in progress aiming at nuclear fusion reactors and the development of high luminance ion sources planned as a part of the Omega Project as the examples, the technology for generating high power ion beams is explained. Both these projects are positioned at the limit of the present technology of high power ion beam application as their targeted beam power reaches several tens MW. Consequently, the requirement for the ion sources is severe, and in particular, the generation of the ion beams having large current density with good convergence is beyond all precedents. The application of high power ion sources has been realized as the neutral beam injectors for large tokamaks. Also the hydrogen negative ion source of large current and the electrostatic ...

Science.gov (United States)

Self-amplifying spontaneous radiation free-electron lasers, such as the LCLS or the European X-FEL, rely on the incoherent, spontaneous radiation as the seed for the amplifying process. Though this method overcomes the need for an external seed source one drawback is the incoherence of the effective seed signal. The FEL process allows for a natural growth of the coherence because the radiation phase information is spread out within the bunch due to slippage and diffraction of the radiation field. However, at short wavelengths this spreading is not sufficient to achieve complete coherence. In this presentation we report on the results of numerical simulations of the LCLS X-ray FEL. From the obtained radiation field distribution the coherence properties are extracted to help to characterize the FEL as a light source.

Energy Technology Data Exchange (ETDEWEB)

Time-resolved characterizations of electron beams using optical transition radiation (OTR) as a prompt conversion mechanism have recently been extended on the Los Alamos Free-electron Laser (FEL) facility 40-MeV linac. Two key timescales for rf-linac driven FELs are the micropulse (10 ps) and the macropulse (5 {mu}s to 1 ms). In the past we have used gated, intensified cameras to select a single or few micropulses (25 to 400 ns gate width) out of the pulse train to evaluate submacropulse effects. Recently, we have obtained some of the first measurements of micropulse bunch length (7 to 10 ps) and submacropulse spatial position and profile using OTR and a Hamamatsu streak camera. Additionally, micropulse elongation effects and head-to-tail transverse kicks are reported as a function of charge.

CERN Document Server

In the beam pipe of the positron damping ring of the Next Linear Collider, electrons will be created by beam interaction with the surrounding vacuum chamber wall and give rise to an electron cloud. Several solutions are possible for avoiding the electron cloud, without changing the bunch structure or the diameter of the vacuum chamber. Some of the currently available solutions for preventing this spurious electron load include reducing residual gas ionization by the beam, minimizing beam photon-induced electron production, and lowering the secondary electron yield (SEY) of the chamber wall. We will report on recent SEY measurements performed at SLAC on TiN coatings and TiZrV non-evaporable getter thin films.

Energy Technology Data Exchange (ETDEWEB)

Polarized electron sources for high energy accelerators took a significant step forward with the introduction of a new laser-driven photocathode source for the SLC in 1992. With an electron beam polarization of >80% and with {approximately}99% uptime during continuous operation, this source is a key factor in the success of the current SLC high-energy physics program. The SLC source performance is used to illustrate both the capabilities and the limitations of solid-state sources. The beam requirements for future colliders are similar to that of the SLC with the addition in most cases of multiple-bunch operation. A design for the next generation accelerator source that can improve the operational characteristics and at least minimize some of the inherent limitations of present sources is presented. Finally, the possibilities for producing highly polarized electron beams for high-duty-factor accelerators are discussed.

International Nuclear Information System (INIS)

This Letter reports the first experimental results from the world's first distributed optical-klystron (DOK) free-electron laser (FEL), the DOK-1 FEL, at Duke University. The DOK-1 FEL is a hybrid system, comprised of four wigglers: two horizontal and two helical. With the DOK-1 FEL, we have obtained the highest FEL gain among all storage ring based FELs at 47.8% (#+-#2.7%) per pass. We have also demonstrated that the FEL gain can be enhanced by increasing electron bunching using wigglers with a different polarization. Furthermore, we have realized controlled polarization switches of the FEL beam by a nonoptical means through the manipulation of a buncher magnet.

Energy Technology Data Exchange (ETDEWEB)

Time-resolved characterizations of electron beams using optical transition radiation (OTR) as a prompt conversion mechanism have recently been extended on the Los Alamos Free-electron Laser (FEL) facility 40-MeV linac. Two key timescales for rf-linac driven FELs are the micropulse (10 ps) and the macropulse (5 [mu]s to 1 ms). In the past we have used gated, intensified cameras to select a single or few micropulses (25 to 400 ns gate width) out of the pulse train to evaluate submacropulse effects. Recently, we have obtained some of the first measurements of micropulse bunch length (7 to 10 ps) and submacropulse spatialposition and profile using OTR and a Hamamatsu streak camera. Additionally, micropulse elongation effects and head-to-tail transverse kick effects are reported as a function of charge.

British Library Electronic Table of Contents (United Kingdom)

In this study, ethanol organosolv pretreatment was investigated and optimized for the pretreatment of empty palm fruit bunch using (1) response surface methodology based on three-variable central composite design and (2) the combined severity parameters. The reaction parameters studied were sulfuric acid concentration (0.5-2.0%), reaction temperature (160-200^oC) and residence time (45-90min). Both models provide valuable and complementary informations: using combined severity parameters, very good predictions were obtained concerning xylan and lignin extraction whereas central composite design is the best model for glucose production. The optimal values of the variables were as the followings: sulfuric acid 2.0% w/w, 160^oC, 78min and the experimental values (96.0%) concerning glucose and...

Energy Technology Data Exchange (ETDEWEB)

The construction and the development of a UV free electron laser have been started under the cooperation of Nihon U, KEK, PNC, ETL and Tohaku U. The project requires a 100MeV S-band electron linear accelerator to expand the oscillation of FEL using fundamental mode to the UV region. The injection system consists of a thermionic RF-gun with a LaB cathode and an {alpha} magnet for magnetic bunching. We are studying to reduce the back-bombardment electrons to realize the macropulse length of 20{mu}sec. Electron beams, up to the energy of 100MeV, are injected into the optical oscillators. Changing the accelerating energy and/or undulator parameters, this system will cover the range from infrared to ultraviolet for the applications in various fields.

International Nuclear Information System (INIS)

In various situations, measurements in prompt gamma neutron activation analysis (PGNAA) are performed to determine the amount of an elemental impurity relative to that of a major constituent of the matrix. An example of this is the measurement of hydrogen concentration in a metallic matrix. In all such cases, a major contributor to the uncertainty in the measurement is the uncertainty in the ratio of the high-purity germanium (HPGe) detector full-energy peak efficiency for the gamma-ray lines of interest (i.e., impurity and matrix gammas). Usually, the ratio is derived from the relative peak efficiency curve, which is determined using isotopic standards that emit multiple gamma ray lines (e.g., "1"5"2Eu) in the energy range <3000 keV, or using prompt gamma radionuclides (e.g., "1"4N, "3"5Cl) in the energy range >3000 keV. In either case, the uncertainty in the ratio of the peak efficiency values derived from such measurements will be on ...

Energy Technology Data Exchange (ETDEWEB)

Free-electron laser (FEL) experiments have been conducted with the 38-MeV L-band electron linac at the Institute of Scientific and Industrial Research, Osaka University. It is a 1.3 GHz RF linac with a thermoionic gun, and equipped with two 12th and one 6th sub-harmonic prebunchers for producing the high-intensity single-bunch beam with a charge up to 67 nC/bunch. For oscillation experiments of FEL, the gun is replaced with that with a smaller cathode area in order to reduce the emittance of the beam. The normalized emittance has been measured to be 200 {pi} mm-mrad. The linac is operated in the long-pulse mode and one of the 12th sub-harmonic bunchers and the 6th sub-harmonic buncher are operated, so that the time duration of the macropulse is 4 {mu}s and the spacing between micropulses is 9.2 ns. The length of the micropulse is 30-40 ps and the charge in each micropulse is 2 nC. The electron beam from the linac is transported to a wiggler ...

International Nuclear Information System (INIS)

The TESLA Test Facility (TTF) at DESY is a facility producing sub-picosecond electron pulses for the generation of VUV or soft X-ray radiation in a free electron laser (FEL). The same electron pulses would also allow the direct production of high-power coherent radiation by passing the electron beam through an undulator. Intense, coherent far-infrared (FIR) undulator radiation can be produced from electron bunches at wavelengths longer than or equal to the bunch length. The source described in this paper provides, in the wavelength range 50-300 #mu#m, a train of about 1-10 ps long radiation pulses, with about 1 mJ of optical energy per pulse radiated into the central cone. The average output power can exceed 50 W. In this conceptual design, we intend to use a conventional electromagnetic undulator with a 60 cm period length and a maximum field of 1.5 T. The FIR source will use the spent electron beam coming from the VUV FEL which allows one to ...

International Nuclear Information System (INIS)

The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps.

Energy Technology Data Exchange (ETDEWEB)

The main physical processes allowing negative ion production by surface sputtering for further acceleration in tandem acceleration are briefly reviewed. The sputtering yield and the probability of negative ion ejection are discussed. The properties of negative ion beams for an efficient acceleration in tandem accelerators are also discussed, with an emphasis on space charge problems. The main features and performances of the heavy negative ion injector of the Bucharest tandem accelerator are given.

Energy Technology Data Exchange (ETDEWEB)

We have undertaken a study of ion mobility resolution in a miniature ion mobility spectrometer with a drift channel 1.7 mm in diameter and 35 mm in length. The device attained a maximum resolution of 14 in separating ions of NO, O{sub 2}, and methyl iodine. The ions were generated by pulses from a frequency-quadrupled Nd:YAG laser. Broadening due to Coulomb repulsion was modeled theoretically and shown experimentally to have a major effect on the resolution of the miniature device.

International Nuclear Information System (INIS)

A general expression for the current-density distribution of a focused-ion beam (FIB) in the chromatic-aberration region is set up in the form of a definite integral. With the experimentally obtained ion-energy distribution of a liquid-metal ion source, its contribution to the FIB current-density distribution is estimated. Calculated results explain the wide-exponential tail of a FIB.

CERN Document Server

We study the high-energy emission of the Galactic black hole candidate GX 339-4 using INTEGRAL/SPI and simultaneous RXTE/PCA data. By the end of January 2007, when it reached its peak luminosity in hard X-rays, the source was in a bright hard state. The SPI data from this period show a good signal to noise ratio, allowing a detailed study of the spectral energy distribution up to several hundred keV. As a main result, we report on the detection of a variable hard spectral feature (>150 keV) which represents a significant excess with respect to the cutoff power law shape of the spectrum. The SPI data suggest that the intensity of this feature is positively correlated with the 25 - 50 keV luminosity of the source and the associated variability time scale is shorter than 7 hours. The simultaneous PCA data, however, show no significant change in the spectral shape, indicating that the source is not undergoing a canonical ...

International Nuclear Information System (INIS)

The measurements of the K X-ray intensity ratio I(K#alpha# _2/K#alpha# _1), I(K#beta# _1/K#alpha# _1) and I(K#beta#/K#alpha#) for elements V, Mn, Zn, Tc, Ru, Cd, Xe, Ba, Cs, Hg and Rn were experimentally determined both by photon excitation, in which 59.5 keV #gamma#-rays from a "2"4"1Am and 123.6 keV #gamma#-rays from a "6"0Co were used, and following the radioactive decay of "5"1Cr, "5"5Fe, "6"7Ga, "9"9Tc, "1"1"1In, "1"3"1I, "1"3"3Ba, "1"3"3Xe, "1"3"7Cs, "2"0"1Tl and "2"2"6Ra. K X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the theoretical values. It was observed that present values agree with the previous theoretical and other experimental results.

CERN Document Server

We examine the accretion properties in a sample of 42 hard (3-60keV) X-ray selected nearby broad-line AGNs. The energy range in the sample is harder than that usually used in the similar previous studies. These AGNs are mainly complied from the RXTE All Sky Survey (XSS), and complemented by the released INTEGRAL AGN catalog. The black hole masses, bolometric luminosities of AGN, and Eddington ratios are derived from their optical spectra in terms of the broad H$\\beta$ emission line. The tight correlation between the hard X-ray (3-20keV) and bolometric/line luminosity is well identified in our sample. Also identified is a strong inverse Baldwin relationship of the H$\\beta$ emission line. In addition, all these hard X-ray AGNs are biased toward luminous objects with high Eddington ratio (mostly between 0.01 to 0.1) and low column density ($<10^{22} \\mathrm{cm^{-2}}$), which is most likely due to the selection effect of the surveys. The hard ...

International Nuclear Information System (INIS)

Progress in the development of negative ion sources and their application in fusion research is reviewed. (U.K.).

UK PubMed Central (United Kingdom)

Ion-channels can be activated (gated) by a variety of stimuli including chemicals, voltage, mechanical force or temperature. Whereas molecular mechanisms of ion-channel gating by chemicals and...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The performance of the PSI/ETH focused ion beam (FIB) system has been improved to produce ion beams of very low energies down to 40 eV with a reasonable spot size of 1 {mu}m at 200 eV. (author) 2 figs., 1 ref.

Energy Technology Data Exchange (ETDEWEB)

The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the ...

International Nuclear Information System (INIS)

The dependences of kinetic energies and peak profiles of multicharged ions of I "q"+ (q = 2-3) and C"2"+ on the laser intensity have been studied in detail by time-of-flight mass spectrometry, those multicharged ions are produced by irradiation of methyl iodide cluster beam with a nanosecond 532 nm Nd-YAG laser. Our experiments show that the kinetic energies released of multicharged ions increase linearly with the laser intensity in the range of 3 x 10"9-2 x 10"1"1 W/cm"2. The peaks of multicharged ions are split to forward ions and backward ions, and the ratio of the backward ions to forward ions decreases exponentially with laser intensity. The decreasing of backward ions is probably due to Coulomb scattering by the heavier I"+ ions when they turn around through the laser focus ...

Science.gov (United States)

The Micro-X instrument is a NASA funded, rocket borne X-ray imaging spectrometer planned for launch in January 2011. An array of Transition Edge Sensors (TESs) will observe incoming photons in the 0.2-3 keV energy band with an energy resolution of 2-4 eV at 1 keV. This will be a substantial improvement over current non-dispersive detectors for X-ray spectroscopy of extended sources and will be the first demonstration of a TES-based microcalorimeter in space. The TESs will utilize the 50 mK stage of an Adiabatic Demagnetization Refrigerator (ADR) as a heat sink, and will be read out by a SQUID time division multiplexer. X-rays will be focused onto the TES array of 128 pixels on a 600 micron pitch by a conically approximated Wolter optic with an effective area of 200 cm2. The spectrometer will have a field of view of 11.8 arcmin. We describe the design and development progress of the instrument.

International Nuclear Information System (INIS)

The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. From the coincidence data, the new decay scheme was constructed. The previously reported 104.70, 105.95 and 774.15 keV #gamma# rays were observed, and have been assigned to the decay scheme for the first time. A newly observed 1508.01 keV #gamma# ray has also been assigned to the scheme for the first time. The intensities of #beta#"- and the values of log ft to most levels were calculated

International Nuclear Information System (INIS)

The L-shell x-ray intensity ratios I(L_#beta#)/I(L_#alpha#) and I(L_#gamma#)/I(L_a_l_p_h_a) for elements with 73 #<=# Z #<=# 83 have been measured at photon incident energies of 17.8, 25.8 and 46.9 keV. The emitted x-rays were measured with a Si(Li) detector system. The results for Re, Pt and Tl are being reported for the first time. A comparison is made of the experimental results with the calculated values obtained by using the theoretical x-ray emission rates, subshell ionisation cross sections, subshell fluorescence yields and Coster-Kronig transition probabilities. The experimental results are in reasonable agreement with the theoretical values. (author).

Energy Technology Data Exchange (ETDEWEB)

Research preformed consisted of: (1) publication of an experimental paper for the n + {sup 40}Ar high resolution total cross section and submission of a theoretical paper dealing with the prediction of the average parameters deduced from the the data; (2) preliminary R-matrix analysis of the neutron total cross section data for the n + {sup 208}Pb systems, up to an energy of 1.7 MeV; (3) completed the analysis of neutron total cross section of data for n + {sup 54}Fe up to energy of 500 keV, with j{sup {pi}} values confirmed, in most cases, by differential scattering data; (4) analysis of total cross section data for the n + {sup 88}Sr system up to an energy of 175 keV; (5) development of a graphical interface for the code RFUNC, used to calculate the differential scattering cross sections, for comparison with measurements.

International Nuclear Information System (INIS)

An ytterbium-169 high dose rate brachytherapy source, distinguished by an intensity-weighted average photon energy of 92.7 keV and a 32.015#+-#0.009 day half-life, is characterized in terms of the updated AAPM Task Group Report No. 43 specifications using the MCNP5 Monte Carlo computer code. In accordance with these specifications, the investigation included Monte Carlo simulations both in water and air with the in-air photon spectrum filtered to remove low-energy photons below 10 keV. TG-43 dosimetric data including S_K, D(r,#theta#), #LAMBDA#, g_L(r), F(r,#theta#), #phi#_a_n(r), and #phi#_a_n were calculated and statistical uncertainties in these parameters were derived and calculated in the appendix.

International Nuclear Information System (INIS)

The optical emission of excited H reflected from clean Cu(110) after impingement of H"+ and H_2"+ in the energy range of 250 eV to 20 keV per nucleon at 70"0 angle of incidence to the surface normal was measured. For incident 10 keV H_2"+, the highest excited hydrogen state detected was the n=10 level. The Hsub(#alpha#) yield was found to be fluence and energy dependent. This effect is attributed either to fast sputtered hydrogen, surface roughness or to an increase with hydrogen concentration in electron states of p-like symmetry near the Fermi level of copper. The Hsub(#alpha#) yield per reflected nucleon shows approximately an exponential dependence on both projectile energy per nucleon and scattered particle reciprocal velocity perpendicular to the surface. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The measurements of the K X-ray intensity ratio I(K{sub {beta}})/I(K{sub {alpha}}) for the 17 elements Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Rb, Sr, Y, Zr, Nb and Mo have been done following ionization by 59.5keV {gamma}-rays from a {sup 241}Am point source. Ratios of emission probabilities of Auger electrons and the vacancy transfer coefficients have been extracted in terms of the intensity ratios. It is found that the present results agree well with earlier fitted values and the semi-empirical values.

British Library Electronic Table of Contents (United Kingdom)

The mechanism of abrupt increase of the giant magneto impedance (GMI) ratio in the ion irradiated Co-based amorphous ribbon has been investigated. The grazing incident X-ray diffraction and transmission electron microscope were used to characterize the samples before and after ion irradiation. The GMI-ratio considerably increased in the ion irradiated samples and the GMI response showed strong dependence on the driving frequencies. The Barkhausen noise (BN) signals are increased for the Ar ion irradiated sample with dose of 1x10^1^7 ion/cm^2. The results are interpreted in terms of GMI variation associated with domain wall dynamics.