Improved FNAL linac beam choppers
Energy Technology Data Exchange (ETDEWEB)
A discussion is presented of the 750-KeV chopper experience with both proton and negative ion beams and the ability of these systems to tailor the Linac beam to the diverse requirements of its users; normal accelerator injection, neutron therapy beam, and electron cooling experiments. This flexibility plus a cleaner beam pulse, improved thyratron operation, and mechanical modularity are the results of recent improvements. Additional benefits have been increased reliability and ease of service to the 750-KeV chopper. 3 refs.
1981-06-01
Photodetachment of negative ion beams in the presence of a background gas
Energy Technology Data Exchange (ETDEWEB)
To suppress space charge blowup in an ion beam passing through a photoneutralizer, it is necessary to introduce some background gas. An analysis is presented of the neutralization of a high-energy, >200-keV negative deuterium ion beam, exposed to photodetachment while in the presence of deuterium. With a gas thickness of <0.01 Torr.cm, the neutral fraction in the output beam is found to be about the same as that gotten from the photoneutralizer operating in vacuum. Neutral atom beam injection for plasma heating is discussed.
1987-03-01
Energy Technology Data Exchange (ETDEWEB)
The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10[sup -15] cm[sup 2] in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single ...
1994-01-01
International Nuclear Information System (INIS)
The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10"-"1"5 cm"2 in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As ...
1994-01-01
Negative-ion based NBI system for JT-60U
Energy Technology Data Exchange (ETDEWEB)
A 500 keV negative-ion based NBI system is under construction for NB current drive and plasma core heating in high density plasma in JT-60U. Part of the beamline and the high voltage power supply required for a verification test of an ion source was completed in March 1995. After having done a high potential test of the power supply, the negative-ion generation and acceleration tests started in June 1995 aiming at deuterium beams of 500 keV, 22A. In initial experiment, deuterium negative-ion beams of 410 keV, 6.1A (2.5 MW) for 0.2 sec, so far, have been achieved. This is the world highest D{sup {minus}} current and negative ion beam power. The construction of the total system will be completed by the beginning of 1996, and the beam ...
1995-12-31
Energy Technology Data Exchange (ETDEWEB)
Neutral atom beams with energies above 200 keV may be required for various purposes in magnetic fusion devices following TFTR, JET and MFTF-B. These beams can be produced much more efficiently by electron detachment from negative ion beams than by electron capture by positive ions. We have investigated the efficiency with which such neutral atoms can be produced by electron detachment in partially ionized hydrogen plasma neutralizers.
1980-09-01
Ion beam pulsing for time of flight (TOF) experiments
Energy Technology Data Exchange (ETDEWEB)
The essential mechanical and electronic parts of a beam pulsing system are described, which reaches an energy resolution of ..delta..E/E=0.1%-0.4% in the energy range from 100 eV and 10 keV.
1985-01-01
Progress of negative-ion based NBI system for JT-60U
Energy Technology Data Exchange (ETDEWEB)
The operation of the negative ion based NBI system for JT-60U has been progressed since 1996. Most of the efforts in the operation for increasing beam power and energy have been concentrated to get over the troubles, caused by surge energy at the moment of the accelerator break-down, in the ion sources and high voltage power supplies. The ion source for the N-NBI, so far, has accelerated negative ion beams of 14.3 A at 380 keV with deuterium and 18.5 A at 360 keV with hydrogen against the target of 22 A. The neutral beam power injected into JT-60U has already reached 5.2 MW at 350 keV for 0.7 sec with deuterium. (author)
1998-07-01
Energy Technology Data Exchange (ETDEWEB)
An electrostatic beam steering mechanism (ESM) has been designed and tested to deflect negative ion beams consisting of multi-beamlets. A steering angle of 10 mrad was obtained within the deviation of less than 1 mrad by biasing two electrodes at 0.5 kV and -0.75 kV for 120 keV H{sup -} ion beam. The current flowing to the positive electrode was no more than 10% of the beam current at a pressure of 2.8x10{sup -5} Torr. (author)
1998-11-01
Long pulse production of high current D"- ion beams in the JT-60 negative ion source
International Nuclear Information System (INIS)
The first long pulse production of high power D"- ion beams has been demonstrated in the JT-60 U negative ion sources, each of which was designed to produce 22 A, 500 keV D"- ion beams. Voltage holding capability and the grid power loading were examined for long pulse production of high power D"- ion beams. From the correlation between voltage holding and the light intensity of cathodoluminescence from the Fiber Reinforced Plastic insulators, the acceleration voltage for stable voltage holding capability was found to be less than 320-340 kV where the light was sufficiently suppressed. By tuning the extraction voltage, the grid power loadings in the ion sources were decreased to the allowable levels for long pulse injection without a significant reduction of the beam power. After ...
2008-02-01
Comparison of beam-induced deposition using ion microprobe
International Nuclear Information System (INIS)
The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from ...
1999-01-02
Energy Technology Data Exchange (ETDEWEB)
Two measurement methods to determine the rate of neutral free radical production by the photo-deionization of negative ion beams (PDINIB) are introduced. These methods, namely, photoelectron-current measurement by low-frequency electro-modulation probe (PMMP) and measurement of decrease in the negative-ion beam current (DNIC) were employed to evaluate the production rate in a trial surface-processing apparatus developed in the author's laboratory utilizing a steady-flux refined beam of neutral free radicals (RBNR) produced by the PDINIB procedure. A {sup 63}Cu{sup -} negative ion beam of kinetic energy E{sub i} varied up to 15 keV was irradiated with a 514.5 nm visible light beam from a 25 W CW Ar{sup +} ion laser. The detection limit of the production rate by the PMMP ...
2003-05-01
Angular scattering in electron capture and loss D/sup -/ beam formation processes
Energy Technology Data Exchange (ETDEWEB)
The development of high energy (> 150 keV) neutral beams for heating and fueling magnetic fusion devices depends on the ability to produce well-collimated negative ion beams. The double capture charge-exchange technique is a known, scalable method. In order to maximize the overall efficiency of the process and to achieve the desired beam characteristics, it is necessary to examine the optical qualities of the beams as well as the total efficiency of beam production. A combined modeling and experimental study of the angular scattering effects in negative ion formation and loss processes has therefore been undertaken.
1980-01-01
International Nuclear Information System (INIS)
We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at ...
Nanoporous structure formations on germanium surfaces by focused ion beam irradiations
International Nuclear Information System (INIS)
The formation of porous structures of nanometre size (nanoporous structures) on germanium (Ge) surfaces by focused ion beam (FIB) irradiations was investigated using various FIB conditions such as ion species, irradiation energies, total fluences, fluence rates, and incident angles. FIB-irradiated regions were observed using a scanning electron microscope and an atomic force microscope. It is found that, using a focused Ga ion beam (Ga FIB) at an energy of 100 keV, the irradiated Ge surface swelled up to ion fluence of 2 x 10"1"7 cm"-"2 with nanoporous structures and then was etched for larger fluences. The shape of swollen nanoporous structures depended on the fluence rate and the incident angle of the Ga FIB. However, such porous structures were observed neither for low-energy (15-30 keV) FIB irradiations using Si and ...
2007-11-07
0--30 keV low-energy focused ion beam system
Energy Technology Data Exchange (ETDEWEB)
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for ...
1988-05-01
0--30 keV low-energy focused ion beam system
International Nuclear Information System (INIS)
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 ...
International Nuclear Information System (INIS)
The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.
2005-11-20
Energy Technology Data Exchange (ETDEWEB)
A large negative ion source for JT-60U produces high current ion beam from a wide extraction area of 45 cm x 110 cm. On the other hand, a cross-sectional area of the negative ion based neutral beam (NNB) injection port on JT-60U is narrow, about 50 cm x 60 cm. In order to inject the neutral beam at a high geometric efficiency, i.e. to suppress beam loss in the beamline, it is necessary to steer the beam for both compensation of undesirable beam deflection in extractor and focusing of the beam. For the JT-60U, two methods are provided for the required beam steering. Among them the results of beam steering experiment by aperture displacement and the design study are summarized in the present report. The experiment was carried out with 400 ...
2000-03-01
Focused ion beam processes for high-T/sub c/ superconductors
International Nuclear Information System (INIS)
Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion ...
Microfabrication processes for high-T_c superconducting films
International Nuclear Information System (INIS)
Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with ...
Focused Ion Beam Induced Effects on MOS Transistor Parameters
Energy Technology Data Exchange (ETDEWEB)
We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.
1999-07-28
Development of high power negative ion sources for fusion at JAERI
Energy Technology Data Exchange (ETDEWEB)
Technologies producing high power negative ion beams have been highly developed in these years at JAERI for use in neutral beam injectors for heating the thermonuclear fusion plasmas. At present, it is possible to produce multi-ampere H-/D- ion beams quasi-continuously at energies more than a few hundred keV with a good beam optics of beamlet divergence of a few milli-radian. Based on these technologies, two R and D projects have been initiated; one is to develop a 22A/500keV/10s D- ion source for the neutral beam injector for JT-60U, and the other is to develop a 1A/1MeV/60s H- ion source to demonstrate high current negative ion acceleration up to the energy of 1MeV, the energy required for the neutral beam injector ...
1995-10-01
The effects of energy non-monochromaticity of "1"1B ion beams on "1"1B diffusion
International Nuclear Information System (INIS)
We have shown that energy contamination introduced by ion beam deceleration technology that is used to increase the beam currents available for low energy boron implants, can affect fabricated junctions adversely. A 4 keV "1"1B beam is extracted and retarded by a potential of -3.5 keV for 0.5 keV "1"1B implantation, or by a potential of -3.8 keV for 0.2 keV "1"1B implantation. Intentional beam contamination was introduced by turning off the retarding potential to allow the 4 keV "1"1B ions to irradiate Si wafers directly. The percentage of contamination, at levels of 0.1%, 0.2% and 0.3% was introduced. Rapid thermal annealing of all the implanted samples was performed under N_2 ambient at 1050 deg. C for 1 s. The dopant tail profiles ...
2005-08-01
High current implantation of negative copper ions into silica glasses
Energy Technology Data Exchange (ETDEWEB)
High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.
1997-12-01
Focused ion beam preparation of inclined planes in semiconductor materials
International Nuclear Information System (INIS)
Focused ion beam (FIB) micromachining has been used to produce inclined planes on semiconductor surfaces. A 10 keV FIB system, utilising a Ga"+ liquid metal ion source (LMIS), was employed. The ramped surfaces were prepared by digitally deflecting the ion beam in a serpentine fashion over a rectangular area and incrementing the time the beam spends at a pixel, dwell time, line by line. For the conditions used, control in micromachining the inclination of the ramps to the starting horizontal surface is of the order of 1 arc s per scan of the FIB over the area of interest. The possibility of using such surfaces prepared by FIB, along with vacuum growth techniques such as molecular beam epitaxy (MBE), for application to strain relief structures and lateral device production is discussed. (author).
Electrical properties of focused-ion-beam boron-implanted silicon
International Nuclear Information System (INIS)
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).
Double-electron-capture cross section for I/sup +/ in a magnesium-vapor target
Energy Technology Data Exchange (ETDEWEB)
Measurements of the double-electron-capture process in which a positive ion of iodine becomes a negative ion in a single collision with a magnesium atom are reported between 20 and 90 keV. The cross section is comparable to that for the rare gases and not as large as might be expected from a two-valence-electron atom. This process is probably insignificant in the production of negative ion beams using a magnesium-vapor target.
1987-06-15
Energy Technology Data Exchange (ETDEWEB)
The use of nitrogen ion implantation to increase the surface hardness of structural steels is well documented. Traditionally this involves the use of high energy nitrogen ion beams (approximately 100 keV), with a relatively low beam current density because high energy beams are necessary to produce the required penetration into the material to achieve a significant depth of hardened material. Hardening needs to occur in a region whose size is comparable with the scale of the deformation associated with the tribocontact. 100 keV nitrogen ions typically penetrate into steels only about 0.1 {mu}m and the range of possible tribological applications is thus restricted by this shallow treatment depth. In plasma nitriding processes the nitrogen ions approach the substrate with much lower energies but the ...
1996-09-01
Alignment accuracy of focused ion beam implantation
Energy Technology Data Exchange (ETDEWEB)
The theoretical alignment limit for focused ion beam (FIB) implantation was deduced from the calculated resolution for the detection of an alignment mark. The alignment resolution varies with the signal to noise ratio and there is an optimum current which gives the best resolution. The alignment resolution epsilon/sub sigma/ is approximately 0.006 ..mu..m for a 160 keV Si/sup ++/ beam from our FIB implanter. The measured alignment error is approximately 0.06 ..mu..m and the main reason of this discrepancy is vibration. The ultimate limit on the alignment error can be reached through improvements in the implanter system.
1987-06-01
Performance estimates of photoneutralized negative-ion beams
Energy Technology Data Exchange (ETDEWEB)
Recent studies have provided data that make it possible to estimate the efficiency and cost of future beamlines using a chemical oxygen-iodine laser as a neutralizer. These studies indicate that a 400-keV neutral deuterium beam of more than 20 A will operate at an efficiency >60%, with the capital cost of the neutralizer at less than $2/W of neutral beam output. Beamlines of lower current and less energy will operate at poorer efficiencies and higher neutralizer costs per watt of neutral beam. These are estimates. As they are very sensitive to changes in the assumptions from which they were derived, they must be used with some caution. Additional studies are expected to provide more reliable estimates.
1984-11-01
Peculiarities of Swift Proton Transmission through Tapered Glass Capillaries
International Nuclear Information System (INIS)
A study of the 150-300 keV proton beam transmission through glass (borosilicate) tapered capillaries with different diameters of the input and output of the capillary was performed. The focusing effect was observed. The areal density of the transmitted beam is enhanced by approximately 20 times. It was shown that changing a taper angle from 0.5 deg to 1.7 deg evidences the increase of the transmission coefficient more than by 300 times keeping the initial energy spectrum of ions. (author)
2011-07-01
Microprobe RBS analysis of localized processed areas by FIB etching and deposition
International Nuclear Information System (INIS)
Localized beam-processed areas using chemical reactions induced by a 30 keV Ga"+ focused ion beam (FIB) with and without I_2 (etching) and (CH_3)_3CH_3C_5H_5Pt gases (Pt deposition) have been analyzed using a 300 keV Be"2"+ microprobe with a beam spot size of 50-80 nm. The analyzed results have been compared with energy dispersive X-ray (EDX) analysis using an electron beam. The EDX analysis only indicated incorporated impurities at high fluence such as Ga, Pt and C, while microprobe RBS analysis could detect residual iodine with low concentration which couldn't be detected by EDS analysis because of the lower sensitivity of the EDX analysis for heavy atoms.
2001-07-01
Low-energy measurements of electron capture by multicharged ions from excited hydrogen atoms
International Nuclear Information System (INIS)
For very low collision energies electron capture from excited hydrogen by multicharged ions is characterized by enormous cross sections, the predicted maximum being comparable to the geometric size of the Rydberg atom. The ion-atom merged-beams technique is being used to study these collisions for the variety of charge states and the wide range of energies (0.1 to 1000 eV/amu) accessible to the apparatus. A neutral D beam containing a Rydberg atom population proportional to 1/n"3 is produced by collisional electron detachment of 8 keV D"- in N_2 gas. An applied electric field results in the range (n=24--11) depending on the strength of the field applied. This beam is then merged with O"3"+ or O"5"+ ion beams at low relative collision velocities where the resultant beam-beam signal of D"+ due to ...
Effects on focused ion beam irradiation on MOS transistors
Energy Technology Data Exchange (ETDEWEB)
The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 {mu}m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga{sup +} focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.
1997-04-01
Energy Technology Data Exchange (ETDEWEB)
In this work, the chemical transformations induced by 5 keV protons (10{sup 6} ion cm{sup -2}) at the surface of 0.4 {mu}m polyacrylonitrile and polymethacrylonitrile films are analysed by XPS and IRRAS. Spectroscopic changes in both the polymers are globally similar, the most significant feature being a lower relative concentration of nitrogen with respect to carbon closer to the surface. Quantitatively, this change is more marked in the case of polyacrylonitrile which suggests a direct relation with the hydrogen in {alpha} to the nitrile function.
1999-05-02
Deposition of Cu film on SiO_2 using a partially ionized beam
International Nuclear Information System (INIS)
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle ...
1990-01-01
Deposition of Cu film on SiO sub 2 using a partially ionized beam
Energy Technology Data Exchange (ETDEWEB)
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l ...
1990-05-01
Deposition of Cu film on SiO sub 2 using a partially ionized beam
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l ...
1990-05-01
Characterization of focused-ion-beam-induced damage in n-type silicon using Schottky contact
International Nuclear Information System (INIS)
The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.
2006-04-10
Micro and nano patterning by focused ion beam enhanced adhesion
International Nuclear Information System (INIS)
We report a new method of generating nano and micro patterns using focused ion beam (FIB) induced adhesion. The method utilizes selective irradiation of thin metallic films grown on substrates by focused ion beam followed by peel off. After peel off of the irradiated thin film it is observed that the ion beam scanned portions are retained on the substrate, creating nano and micro patterns. The method is suitable for materials of which the adhesion to the substrate can be improved by ion bombardment. The phenomenon has been demonstrated by creating gold nano patterns of different shapes and sizes ranging from 500 nm to 5 #mu#m on SiO_2-Si substrate using 10-30 keV Ga FIB at beam currents up to 10 pA. The mechanism involved in the process has been discussed. The technique could be utilized to prepare ...
2009-05-01
Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges
Energy Technology Data Exchange (ETDEWEB)
Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.
2003-05-01
International Nuclear Information System (INIS)
We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and ...
2008-04-01
Microfabrication processes for high-T sub c superconducting films
Energy Technology Data Exchange (ETDEWEB)
Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-{Tc} superconducting lines as narrow as 0.8 {mu}m have been fabricated from epitaxial YBa{sub 2}Cu{sub 3}O{sub 7 {minus} {ital y}} films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 {mu}m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 {times} 10{sup 4} A/cm{sup 2} at 77.3 K. Maskless etching was carried out using 130-keV au{sup +} focused ion-beam (FIB) with a 0.1-{mu}m-diameter beam. A 50-nm-thick film was patterned into 0.3-{mu}m-wide lines at a dose of 5 {times} {sup 16} ions/cm{sup 2}. In comparison with Ar IBE, Cl{sub 2} reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering ...
1989-12-01
Energy Technology Data Exchange (ETDEWEB)
The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ...
2007-03-15
International Nuclear Information System (INIS)
The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si"2"+, 1.0-MeV He"+ and 340-keV H"+) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. ...
2007-03-01
Measurement of the 183 keV Resonance in 17O(p,alpha)14N using a Novel Technique
Energy Technology Data Exchange (ETDEWEB)
We have developed a novel technique for measurements of low energy (p,alpha) reactions using heavy ion beams and a differentially-pumped windowless gas target. We applied this new approach to study the 183 keV resonance in the 17O(p,alpha)14}N reaction. We report a resonance energy (center-of-mass) of 183.5{+0.1}{-0.4} keV, a resonance strength of 1.70 +/- 0.15 meV, and set an upper limit (95\\% confidence) on the total width of the state of < 0.1 keV. This resonance is important for the 17O(p,alpha)14}N reaction rate, and we find that 18F production is significantly decreased in low mass ONeMg novae but less affected in more energetic novae. We also report the first determination of the stopping power for oxygen ions in hydrogen gas near the peak of the Bragg curve (E=193 keV/u) to be (63+/-1)e-15 eV-cm2.
2007-06-01
International Nuclear Information System (INIS)
The aim of this work is to investigate the acoustic wave generation by pulsed and periodically modulated ion beams in different solid materials depending on the beam parameters and to demonstrate the possibility to apply an intensity modulated focused ion beam (FIB) for acoustic emission and for nondestructive investigation of the internal structure of materials on a microscopic scale. The combination of a FIB and an ultrasound microscope in one device can provide the opportunity of nondestructive investigation, production and modification of micro- and nanostructures simultaneously. This work consists of the two main experimental parts. In the first part the process of elastic wave generation during the irradiation of metallic samples by a pulsed beam of energetic ions was investigated in an energy range from 1.5 to 10 MeV and pulse ...
The influence of target backing on ion-beam electron spectra
International Nuclear Information System (INIS)
Several different aspects of the influence of the target backing on in-beam electron spectra following compound nuclear reactions induced by accelerated ions at tandem energies irradiating backed targets are discussed in detail. This discussion is illustrated by a few typical examples, such as "1"2C"5"+ and "3"1P"1"0"+ beams at 4 MeV/u bombarding Sn(+Be), Sn(+Au), Pb(+C) backed targets. Moreover, the relative influence of electron backscattering, electron Doppler shift and Doppler broadening as well as #delta#-electron emission on the low energy electron spectra (E_e#<=#100 keV) obtained under such conditions are investigated in the frame of the available experimental data. (orig.).
Recent advance of focused ion beam technology in maskless deposition and patterning
International Nuclear Information System (INIS)
The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).
International Nuclear Information System (INIS)
Effects of helium and hydrogen production on irradiation hardening of martensitic steel F82H (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) were examined by dual or triple beam experiments. The effects of tempering and cold working were also examined. The irradiations were performed at about 500degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The value of appm-He/dpa for the dual ion beams was about 15, and the values of appm-He/dpa and appm-H/dpa for the triple ion beams were 15 and 15 (or 150), respectively. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. Irradiation softening and hardening was observed in F82H-std, F82H+20%CW and a non-tempered F82H steels ...
2007-06-01
Technique for generating atomic negative ion beams of the group IA elements
Energy Technology Data Exchange (ETDEWEB)
A technique has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb and Cs). The method is based on the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag or other metal powders. The following intensities are typical of those observed from carbonate samples subjected to approx. = 3 keV cesium ion bombardment: Li/sup -/: greater than or equal to 0.5 ..mu..A; Na/sup -/: greater than or equal to 0.5 ..mu..A; K/sup -/: greater than or equal to 0.5 ..mu..A; Rb/sup -/: greater than or equal to 0.5 ..mu..A; Cs/sup -/: greater than or equal to 0.2 ..mu..A.
1989-03-15
Investigation on corrosion resistance of amorphous films prepared by ion beam mixing
International Nuclear Information System (INIS)
Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.
1991-01-01
Energy Technology Data Exchange (ETDEWEB)
With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga{sup +} focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. ...
2005-04-01
International Nuclear Information System (INIS)
With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga"+ focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The ...
2005-04-01
CoSi_2 nanostructures by writing FIB ion beam synthesis
International Nuclear Information System (INIS)
A mass separated focused ion beam (FIB) is a very useful tool to fabricate nanostructures by writing implantation within an ion beam synthesis process. In these investigations the IMSA-OrsayPhysics FIB, equipped with a Co_3_6Nd_6_4 alloy liquid metal ion source, was applied. Si(100) and (111) wafers were implanted with 60 keV Co"+"+ ions in the dose range of 2 . 10"1"6 to 2 . 10"1"7 cm"-"2. Implantation parameters were investigated, like pixel dwell time, relaxation time (time between two cycles), dose rate as well as the pixel overlapping factor. The subsequent annealing was done in a two step process, namely 600 deg. C for 60 min and 1000 deg. C for 30 min in a N_2 ambient. The results obtained by SEM investigations in terms of continuous nanowire structures following the direction and interrupted CoSi_2 pattern in the direction show a ...
2006-07-01
Energy Technology Data Exchange (ETDEWEB)
For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black ...
2000-04-01
International Nuclear Information System (INIS)
For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe"+, 360 keV He"+, and 180 keV H"+ simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 ...
2000-04-01
Energy Technology Data Exchange (ETDEWEB)
Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. ...
1997-09-01
Soft X-ray holography of FIB nanostructured Co/Pt multilayers
International Nuclear Information System (INIS)
Focused Ion Beam (FIB) milling is a powerful tool to produce ordered magnetic nanostructures. However, it is impossible to produce out-of-plane magnetized nanoscale structures from multilayer films by direct FIB writing. Co/Pt multilayers exhibit an out-of-plane easy axis due to strong perpendicular interface anisotropy. The interface contribution is known to be very sensitive to high energy ion irradiation. In case of 30 keV Ga ions it needs less than one ion per 100 surface atoms to destroy the perpendicular interface anisotropy. We demonstrate how this problem can be overcome by milling a Co/Pt multilayer, which has been deposited on a SiN membrane, from the rear side, through the SiN. The effect of the ions is determined as a function of applied dose utilizing the domain structure imaged by soft X-ray holography. When the magnetic ...
2009-03-22
Infrared monitoring of the Doublet III beam armor plate
Energy Technology Data Exchange (ETDEWEB)
An 80 keV, 3.6 MW neutral beam injection system has recently been installed on Doublet III, and the installation of a second system is scheduled within several months. Armor plate consisting of /approximately equals/100 graphite tiles (10 cm x 10 cm) coated with TiC has been plated over portions of the inner vacuum wall lying in the line of sight of the ion sources. In order to monitor the condition of the armor plate an infrared camera and a set of optical pyrometers have been installed alongside the beamline and view the armor plate through a CaF/sub 2/ window. The pyrometers measure the temperature of the armor plate associated with the maximum of the intensity distribution of each ion source.
1981-01-01
Method and apparatus for efficient photodetachment and purification of negative ion beams
Energy Technology Data Exchange (ETDEWEB)
Methods and apparatus are described for efficient photodetachment and purification of negative ion beams. A method of purifying an ion beam includes: inputting the ion beam into a gas-filled multipole ion guide, the ion beam including a plurality of ions; increasing a laser-ion interaction time by collisional cooling the plurality of ions using the gas-filled multipole ion guide, the plurality of ions including at least one contaminant; and suppressing the at least one contaminant by selectively removing the at least one contaminant from the ion beam by electron photodetaching at least a portion of the at least one contaminant using a laser ...
2008-02-26
Energy Technology Data Exchange (ETDEWEB)
A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the ...
2006-07-30
Ar/sup +/ ion beam induced silicide formation mechanism at the Pf-Si interface
Energy Technology Data Exchange (ETDEWEB)
Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.
1989-01-01
Studies of Plasma Confinement in GOL-3 Multi-mirror Trap
International Nuclear Information System (INIS)
Recent results of the experiments at GOL-3 facility are presented. Plasma with a density of 1014...1016 cm-3 is confined in a 12-meter-long solenoid, which comprises 55 corrugation cells with mirror ratio Bmax/B min=4.8/3.2 T. The plasma is heated up to 2...4 keV temperature by a high power relativistic electron beam (?1 MeV, ? 330 kA, ?8?s, ?120 kJ) injected through one of the ends. Mechanism of experimentally observed fast ion heating, issued of plasma stability and confinement are discussed.
2006-01-01
Direct patterning of gold oxide thin films by focused ion-beam irradiation
International Nuclear Information System (INIS)
For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, ...
2000-09-01
FABRICATION OF BISMUTH NANOWIRE DEVICES USING FOCUSED ION BEAM MILLING
International Nuclear Information System (INIS)
In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO_2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. ...
2009-07-23
International Nuclear Information System (INIS)
Effect of helium and hydrogen production on radiation-hardening of F82H irradiated by dual or triple beam condition were investigated. The specimens used were four types of ferritic martensitic steels of F82H-std (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) steels tempered at 750degC for 60 minutes, 20% cold worked F82H steel, F82H tempered for 10 minutes and non-tempered F82H steels. The irradiation was performed at 450degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The ratios of He (appm)/dpa and H(appm)/dpa were 15 nad 15 (or 150) for dual and triple ion beams. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. The hardness in these F82H steels irradiated at 450degC to 18 dpa under triple ...
2003-03-01
Triple ion-beam studies of radiation damage in 9Cr2WVTa ferritic/martensitic steel
Energy Technology Data Exchange (ETDEWEB)
To simulate radiation damage under a future Spallation Neutron Source (SNS) environment, irradiation experiments were conducted on a candidate 9Cr-2WVTa ferritic/martensitic steel using the Triple Ion Facility (TIF) at ORNL. Irradiation was conducted in single, dual, and triple ion beam modes using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} at 80, 200, and 350{degrees}C. These irradiations produced various defects comprising black dots, dislocation loops, line dislocations, and gas bubbles, which led to hardening. The largest increase in hardness, over 63 %, was observed after 50 dpa for triple beam irradiation conditions, revealing that both He and H are augmenting the hardening. Hardness increased less than 30 % after 30 dpa at 200{degrees}C by triple beams, compatible with neutron irradiation data from previous work which ...
1997-11-01
Development of a high-current microwave ion source for proton linac application systems
International Nuclear Information System (INIS)
A microwave hydrogen ion source was developed to improve reliability, and to increase operation time of proton linac application systems. The ion source needs no filament in the discharge chamber, which leads to better reliability and less maintenance time. The developed source produced a maximum hydrogen ion beam current of 70 mA (high current density of 360 mA/cm2, beam energy of 30 keV) with a 5 mm diam extraction aperture and 1.2 kW microwave power. The proton fraction was increased with an increase in rf power and reached around 90% at 1 kW. Measured 90% beam normalized emittance was 0.4 #pi# mm mrad. Rise times of rf power and beam current to 90% of the final values were about 30 and 35 #mu#s, respectively, at a pulse operation mode with 400 #mu#s pulse width and 100 Hz repetition rate. The dynamic range of ...
2004-05-01
The effect of boron implant energy on transient enhanced diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when ...
1997-02-01
Production of atomic negative ion beams of the Group IA elements
Energy Technology Data Exchange (ETDEWEB)
A method has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb, and Cs). The method consists of the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag, or other metal powder. The following intensities are typical of those observed from carbonate samples subjected to /approximately/3 KeV cesium ion bombardment: Li/sup -/: greater than or equal to0.5 ..mu..A; Na/sup -/: greater than or equal to0.5 ..mu..A; K/sup -/: greater than or equal to0.5 ..mu..A; Rb/sup -/: greater than or equal to0.5 ..mu..A; Cs/sup -/: greater than or equal to0.2 ..mu..A. 7 refs., 2 figs., 1 tab.
1988-01-01
Panel session: Transport of negative ion beams
Energy Technology Data Exchange (ETDEWEB)
Transport of negative ion beams through plasma is reviewed. The effect of space charge on beam stability and beam emittance is discussed. The approaches to the beam transport problem developed at Los Alamos, Berkeley, Oak Ridge and Culham Laboratory are intercompared. (AIP)
1987-07-30
Uses of laser optical pumping to produce polarized ion beams
Energy Technology Data Exchange (ETDEWEB)
Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H/sup -/ or /sup 3/He/sup -/ ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams.
1983-04-01
Production of a helium beam in a focused ion beam machine using an electron beam ion trap
International Nuclear Information System (INIS)
Gallium liquid-metal ion sources that have been introduced in the late 1970s have allowed the development of a new class of micro- and nanofabrication tools collectively denominated as focused ion beam (FIB) machines. To investigate the potential of a helium beam in such a FIB instrument the authors have tested a room-temperature electron beam ion trap coupled with a high resolution FIB machine. In this letter they present their first results in target imaging using a helium beam with a resolution that allows to account for a beam diameter in the submicrometer range.
2007-02-19
High-resolution primary ion beam probe for SIMS
Energy Technology Data Exchange (ETDEWEB)
High-brightness negative ion beams, especially O{sup -} beams, from a compact gaseous plasma source are studied to evaluate the suitability for high-resolution SIMS. Ion-optical calculations are made using the beam parameters from the new source. Results suggest that sub-100 nm spot with O{sup -} beam current of 10 pA is achievable. Beam focusing, the resulting beam current distributions at the target and the expected instrumental performance are discussed.
2004-06-15
Three-step photoionization of mercury for application to separation of mercury isomers
International Nuclear Information System (INIS)
Development of techniques for separating isomeric nuclides is important to the investigation of schemes for gamma-ray lasers. In preparation for an experiment to separate 10_1_4 atoms of the /sub 197m/Hg (299 keV, tau/sub 1/2/ = 24 hours) isomer, we report isotopically selective resonance ionization of mercury atoms. This has been accomplished by three-step excitation via the 6_3P"1 and 8_1S"0 excited states, using three collinear pulsed laser beams of 254, 286, and 532 nm wavelengths from a Nd:YAG and two dye lasers. These beams were passed through a closed mercury-vapor cell containing electrostatic plates to which the ions were drawn. Ion current and fluorescent radiation were measured as a function of laser frequency. Hyperfine structures for the 254- and 286-nm transitions were observed.
Microstructural observation of focused ion beam modification of Ni silicides/Si thin films
International Nuclear Information System (INIS)
Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation ...
1996-12-02
Transient enhanced diffusion of Sb and B due to MeV silicon implants
Energy Technology Data Exchange (ETDEWEB)
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an ...
1997-06-01
Transient enhanced diffusion of Sb and B due to MeV silicon implants
International Nuclear Information System (INIS)
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial ...
Recent status of the development of intense ion beams
Energy Technology Data Exchange (ETDEWEB)
Taking the development of large current, negative ion sources which is in progress aiming at nuclear fusion reactors and the development of high luminance ion sources planned as a part of the Omega Project as the examples, the technology for generating high power ion beams is explained. Both these projects are positioned at the limit of the present technology of high power ion beam application as their targeted beam power reaches several tens MW. Consequently, the requirement for the ion sources is severe, and in particular, the generation of the ion beams having large current density with good convergence is beyond all precedents. The application of high power ion sources has been realized as the neutral beam injectors for large ...
1993-12-01
Energy Technology Data Exchange (ETDEWEB)
The performance of the PSI/ETH focused ion beam (FIB) system has been improved to produce ion beams of very low energies down to 40 eV with a reasonable spot size of 1 {mu}m at 200 eV. (author) 2 figs., 1 ref.
1996-10-01
Large ion beams, fundamentals of generation and propagation
Energy Technology Data Exchange (ETDEWEB)
This book is a compliation and analysis of discussions of phenomena important to ion beams and high perveance ion beams. This text discusses physics essential to research on ion beam generation and propagation and provides some requisite background to understanding the criteria for designing electrodes. Ion sources are categorized in terms of their configurations, and the relationships between various types of sources is developed. Covers collisionless space charge phenomena, collisionless plasmas, collisional effects and the taxonomy of high poissance beams. Chapters also treat the field of intense negative ion beams.
1987-01-01
International Nuclear Information System (INIS)
Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been ...
2005-08-01
Energy Technology Data Exchange (ETDEWEB)
Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N ...
1999-09-01
First ion beam transfered from the SPS to the LHC
An ion beam has been successfully transfered from the SPS to the LHC for the first time on 12 November 2007.
2007-01-01
International Nuclear Information System (INIS)
An overview of different Ion Beam Analysis (IBA) techniques is given. Examples of applications of the PIXE techniques to various types of samples are presented. (author)
1999-11-01
Energy Technology Data Exchange (ETDEWEB)
Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of ...
1983-12-15
Sub-0.1 #mu#m line fabrication by Focused ion beam and columnar structural Se-Ge resist
International Nuclear Information System (INIS)
As a method to enhance the sensitivity (S) of an inorganic resist for focused-ion-beam (FIB), lithography, sub-0.1 #mu#m patterning properties of a columnar structural #alpha#-Se_7_5Ge_2_5 resist have been investigated using 30 keV low-energy Ga"+-FIB exposure and CF_4 reactive-ion etching (RIE). development. The Se_7_5Ge_2_5 thin films were 60 .deg. and 80 .deg. -obliquely deposited on Si substrate and parts of the films were annealed for several minutes at the glass transition temperature (T_g=#approx#220 .deg. C). Columnar structures with the angles of approximately 40 .deg. and 65 .deg. are observed in 60 .deg. and 80 .deg. -obliquely deposited films, respectively, and they disappear after annealing. Despite the disappearance of the columnar structures, a critical decrease in thickness is not observed. For the FIB exposures with a beam diameter of #approx#0.1#mu#m and around the threshold dose, the ...
1998-11-01
Extension of improved particle and energy confinement regime in the core of LHD plasma
International Nuclear Information System (INIS)
Recent two major topics of Large Helical Device (LHD) towards fusion relevant conditions, high-density operation and high-ion-temperature operation, are reported. Super dense core plasma was obtained by the combination of repetitive hydrogen ice pellet injection and high power neutral beam injection (NBI) heating. A very peaked density profile with the highest central density of 1.1x1021 m-3 was produced showing that the particle transport was suppressed very well in the plasma core. The spatial density varies as the position of magnetic axis (Rax), and the steepest profile is obtained at Rax=3.95 m. The highest central ion temperature of 5.6 keV was obtained in hydrogen plasma at electron density of 1.6 x 1019 m-3 by NBI, where a peaked ion-temperature profile with internal ion energy transport barrier was observed. The profile of electron temperature did not ...
2009-06-01
International Nuclear Information System (INIS)
French (1979). France Dolique, JM Grenoble-1 Univ., 38 (France) Grenoble,
1979-07-13
The development of high-intensity negative ion sources and beams in the USSR. Technical report
Energy Technology Data Exchange (ETDEWEB)
This report reviews Soviet R and D of (1) high-intensity negative ion sources and (2) transport and focusing of negative ion beams, using Soviet open literature of the past ten years, and correlates this data with data on Soviet institutes responsible for negative ion beam development. The Soviets are developing intense negative ion beams as the basis for creating neutral beams for injection into mirror traps and tokamaks, for inertial confinement fusion, and possibly for exoatmospheric beam weapon applications. The report focuses specifically on surface-plasma-type ion sources, which were first developed in the USSR and which show great promise for creating beams of high intensity, high brightness, and low emittance. Mechanisms for optimum negative ...
1981-09-01
International Nuclear Information System (INIS)
There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam ...
2007-02-07
International Nuclear Information System (INIS)
The total interaction cross sections (#sigma#_t) of some sugars and amino acids and five elements: lithium, carbon, oxygen, aluminium and calcium have been measured for 6.4 keV, 13.95 keV, 14.4 keV, 17.74 keV, 24.14 keV, 30.8 keV, 35 keV, 59.54 keV, 81 keV, 122 keV and 136 keV photons in a narrow beam good geometry set up, by using high resolution detectors such as a Si-PIN diode detector and a high purity germanium detector. The #sigma#_t values have been used in a matrix method to evaluate the effective atomic numbers Z_e_f_f of the samples from their effective atomic cross sections #sigma#_a. The effective atomic cross section of a sample #sigma#_a is the total interaction cross section divided by the total number of atoms of all types ...
2007-09-28
Focused ion beam damage to MOS integrated circuits
Energy Technology Data Exchange (ETDEWEB)
Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. ...
2000-05-10
Annealing behavior of radiation damages in metal-silicides
International Nuclear Information System (INIS)
The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).
M X-ray production in Nd, Gd, Ho and Lu by 1-6 MeV lithium ions
Energy Technology Data Exchange (ETDEWEB)
M-shell X-rays of the rare-earth elements {sub 60}Nd, {sub 64}Gd, {sub 67}Ho and {sub 71}Lu were measured for lithium ion bombardment in the energy range 1.0-6.0 MeV. The M-shell X-rays with energies of 0.978-1.631 keV were detected with a LINK analytical detector. The efficiency of the detector was determined by using the known atomic-field bremsstrahlung cross-sections from low energy electron beams and K-shell X-ray measurements with light projectiles. The measured cross-sections are compared to the predictions of the first Born approximation and the ECPSSR (energy loss and Coulomb deflection effects, perturbed stationary state approximation with relativistic correction) theories. The best theoretical description of the present data is given by the ECPSSR theory, even though the discrepancy between data and theory is increasing at higher projectile energies.
2004-06-01
The physics of Electron Beam Ion Sources
Energy Technology Data Exchange (ETDEWEB)
There are 13 Electron Beam Ion Sources in operation which produce highly charged ions, up to Th[sup 80+] and Xe[sup 53+]. Most of the sources are used to study these ions under electron impact or when recombining with gaseous or solid targets. That provides an insight into the atomic physics of these highly charged ions and into the physics of the plasma in which such ions can be found. This paper reviews the present knowledge of atomic processes, important in the production of such ions with an EBIS.
1990-01-01
The physics of Electron Beam Ion Sources
Energy Technology Data Exchange (ETDEWEB)
There are 13 Electron Beam Ion Sources in operation which produce highly charged ions, up to Th{sup 80+} and Xe{sup 53+}. Most of the sources are used to study these ions under electron impact or when recombining with gaseous or solid targets. That provides an insight into the atomic physics of these highly charged ions and into the physics of the plasma in which such ions can be found. This paper reviews the present knowledge of atomic processes, important in the production of such ions with an EBIS.
1990-12-31
Drift compression and final focus of intense heavy ion beams
Energy Technology Data Exchange (ETDEWEB)
The longitudinal and transverse dynamics of a heavy ion fusion beam during the drift compression and final focus phase is studied. A lattice design with four time-dependent magnets is described that focuses the entire beam pulse onto a single focal point with the same spot size.
2003-05-01
Study of implantation damage in germanium formed using Ga"+ FIB
International Nuclear Information System (INIS)
Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ...
Energy Technology Data Exchange (ETDEWEB)
The object and the purpose of the present work was to develop, to assemble and to start running a new TOF (time of flight) mass spectrometer for imaging SNMS analytic which is optimized for the analysis of highly molecular secondary ions. The most important purpose was the characterization of the TOF mass spectrometer. The obtained mass spectra of indium, tantalum and silver clusters reflect the excellent properties of the TOF mass spectrometer for the detection of large clusters with good detection efficiency up to masses of 16000 amu. The possibility of the deflection of selected saturated atom and cluster peaks serves for further improvement of the detection efficiency for large molecules. The accessible mass resolution was determined to be of the order of m/{delta}m=1000 in the high mass region. Numerous measurements were carried out to characterize the useful yield of this spectrometer. For a best possible adaptation of the TOF mass spectrometer for the ...
2006-12-21
Current results from the Texas A and M electron beam ion source
International Nuclear Information System (INIS)
The electron beam ion source (EBIS) at Texas A and M University was constructed and is currently undergoing tests on the injection and transmission of the electron beam through the solenoid. Results of computer simulation of the electron beam are presented, as well as measurements of electron beam profiles using a pinhole beam analyzer.
High-current negative-ion beam transport
Energy Technology Data Exchange (ETDEWEB)
The requirements for transporting high-current, negative-ion beams are presented with particular emphasis on applications involving negative-hydrogen-ion beams. In addition to the usual matching and steering problems, particular attention must be paid to beam emittance growth in the transport system. Depending on the application, a number of approaches have been developed using both magnetic and electric lenses. I discuss the design considerations for transporting and matching these beams to radiofrequency quadrupole accelerators, and present a survey of the various types of beamlines now used for negative-ion beams.
1993-01-01
High-current negative-ion beam transport
Energy Technology Data Exchange (ETDEWEB)
The requirements for transporting high-current, negative-ion beams are presented with particular emphasis on applications involving negative-hydrogen-ion beams. In addition to the usual matching and steering problems, particular attention must be paid to beam emittance growth in the transport system. Depending on the application, a number of approaches have been developed using both magnetic and electric lenses. I discuss the design considerations for transporting and matching these beams to radio-frequency quadrupole accelerators, and present a survey of the various types of beamlines now used for negative-ion beams.
1992-10-05
High-current negative-ion beam transport
Energy Technology Data Exchange (ETDEWEB)
The requirements for transporting high-current, negative-ion beams are presented with particular emphasis on applications involving negative-hydrogen-ion beams. In addition to the usual matching and steering problems, particular attention must be paid to beam emittance growth in the transport system. Depending on the application, a number of approaches have been developed using both magnetic and electric lenses. I discuss the design considerations for transporting and matching these beams to radiofrequency quadrupole accelerators, and present a survey of the various types of beamlines now used for negative-ion beams.
1993-04-01
Energy Technology Data Exchange (ETDEWEB)
In this article, the author presents the principles, applications and advantages of proton and heavy ion beams used for radiotherapy.
1993-07-01
International Nuclear Information System (INIS)
Progress in the development of negative ion sources and their application in fusion research is reviewed. (U.K.).
1983-04-18
Ion sources for initial use at the Holifield radioactive ion beam facility
Energy Technology Data Exchange (ETDEWEB)
The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion ...
1994-12-31
Ion sources for initial use at the Holifield Radioactive Ion Beam Facility
Energy Technology Data Exchange (ETDEWEB)
The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion ...
1994-05-01
A new scheme of the longitudinal emittance measurement for negative ion beams
Energy Technology Data Exchange (ETDEWEB)
A new scheme of the longitudinal emittance measurement for high energy negative ion beam is proposed. The energy distribution of the detached electron from the negative ions by the photodetachment process, if the photon energy is almost equal to the electron binding energy of the negative ion (=electron affinity of the atom), reflects that of the original negative ions. Therefore, by introducing the photon in a short width comparing with the bunch width of the negative ion beam, the longitudinal energy distribution of each phase of the beam, that is the longitudinal emittance, can be measured. (author).
1995-08-01
Plasma-based ion implantation and deposition: A review of physics,technology, and applications
Energy Technology Data Exchange (ETDEWEB)
After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, ...
2005-05-16
Development of a high current negative ion source for fusion application
Energy Technology Data Exchange (ETDEWEB)
Negative ion based neutral beam injector is one of the most attractive heating system in future fusion reactors. In realizing the system, the crucial device which has to be developed is a high intensity negative ion source. Significant progress has been made on the negative ion source in these years. Among them, a few ampere negative ion beam were produced stably, while the divergence of negative ion beams becomes to be as low as < 10 mrad. We consider these results are demonstrating the potential of the negative ion source for the heating device in future reactors.
1988-11-01
Plasma production and flow in negative ion beams
Plasma generated in low-density vapor by a negative ion beam has been studied experimentally and computationally. We show that space charge neutralization of the beam occurs at very low vapor density, and that correspondingly the electron density may be much less than the beam and plasma ion densities. When there is a large local gas density, as in a charge changing cell, the resulting high electron density is also localized to the same region. Therefore, very few electrons will reach a negative ion accelerator even if it is placed one or two beam diameters from such a cell.
1977-09-21
The physics of production, acceleration and neutralization of large negative ion beams
Energy Technology Data Exchange (ETDEWEB)
Neutral beam systems for the next generation of magnetic fusion devices will be based on negative ions. Development are progressing steadily, and large negative ion-based systems are prepared for JT60-U and LHD, and are being considered for ITER. An overview of the physics of the production, acceleration and neutralization of large negative ion beams is given. the present state of the art in Research and Development is also surveyed. (author). 55 refs., 10 figs., 1 tab.
1995-12-31
The physics of production, acceleration and neutralization of large negative ion beams
Energy Technology Data Exchange (ETDEWEB)
Neutral beam systems for the next generation of magnetic fusion devices will be based on negative ions. Developments are progressing steadily, and large negative ion-based systems are under preparation for JT60-U and LHD, and are being considered for ITER. An overview of the physics of the production, acceleration and neutralization of large negative ion beams is given. The present state of the art in R and D is also surveyed. (Author).
1995-11-01
Micromachining using focused ion beams
Energy Technology Data Exchange (ETDEWEB)
Focused ion beam (FIB) systems prove to be useful precision micromachining tools for a wide variety of applications. This micromachining technique includes scanning ion microscopy (SIM), micromachining by physical sputtering, and the ion-beam induced surface chemistry for etching and deposition. This technique is applied to image and modify IC's, to micromechanical applications, to modify the tip shape of tungsten emitters, and to prepare cross sections of selected regions for inspection in a transmission electron microscope (TEM). (orig.)
1994-11-16
Production of polarized negative ion beams by collisional pumping
Energy Technology Data Exchange (ETDEWEB)
The production of polarized negative ion beams by collisional pumping is described. Collisional pumping utilizes repeated charge changing collisions in a thick electron-spin-polarized gas or vapor target to form a polarized fast atom beam. The polarized fast atom beam is then partially converted into a polarized negative ion beam in a vapor target. Analysis is presented for a hydrogen beam passing through either a thick polarized H atom target or a thick polarized alkali target. Large polarizations and large currents may be possible.
1983-01-01
Production of polarized negative ion beams by ''collisional pumping''
Energy Technology Data Exchange (ETDEWEB)
The production of polarized negative ion beams by ''collisional pumping'' is described. Collisional pumping utilizes repeated charge changing collisions in a thick electron-spin-polarized gas or vapor target to form a polarized fast atom beam. The polarized fast atom beam is then partially converted into a polarized negative ion beam in a vapor target. Analysis is presented for a hydrogen beam passing through either a thick polarized H atom target or a thick polarized alkali target. Large polarizations and large currents may be possible.
1984-03-01
Species dependence of the emittances of sputter-generated negative ion beams
Energy Technology Data Exchange (ETDEWEB)
We report experimental evidence of a previously unseen species-dependent effect in the transverse emittances of momentum analysed /sup 28/Si/sup -/, /sup 58/Ni/sup -/ and /sup 197/Au/sup -/ ion beams generated by caesium ion sputtering. The high-resolution emittance measurement techniques employed in this work have enabled us to estimate the energy spreads of these ion beams; differences in the widths of the energy distributions are the origin of the observed differences in emittances of the ion beams investigated. (author).
1989-04-14
Energy Technology Data Exchange (ETDEWEB)
This paper describes the design of a high-voltage negative ion source based on a magnetically insulated diode and generating microsecond pulses. Plane an cylindrical cathodes have been tested. The spatial and angular distributions of negative ions in the beam have been measured. The content of negative ions with different masses in the beam are given. The ion current density measured by a Faraday cup was up to 1 A/cm{sup 2} for the radial beam and 30-40 A/cm{sup 2}.
1995-10-01
Emittance characteristics of negative ion beams generated by the sputter technique
Energy Technology Data Exchange (ETDEWEB)
Average emittance data for ion beams extracted from cesium-sputter negative ion sources equipped with spherical, ellipsoidal, and cylindrical geometry cesium-surface ionizers are presented. The attributes of the respective source geometries are described in terms of their cesium ion optical properties. The results of recent measurement of the emittances of momentum-analyzed beams extracted from the ellipsoidal geometry source are also presented. These measurements indicate the presence of a species-dependent effect. The effect is believed to be attributable to differences in the energy spreads of the respective negative ion beams introduced by the sputter generation process.
1990-01-01
Emittance characteristics of negative ion beams generated by the sputter technique
Energy Technology Data Exchange (ETDEWEB)
Average emittance data for ion beams extracted from cesium-sputter negative ion sources equipped with spherical, ellipsoidal, and cylindrical geometry cesium-surface ionizers are presented. The attributes of the respective source geometries are described in terms of their cesium ion optical properties. The results of recent measurement of the emittances of momentum-analyzed beams extracted from the ellipsoidal geometry source are also presented. These measurements indicate the presence of a species-dependent effect. The effect is believed to be attributable to differences in the energy spreads of the respective negative ion beams introduced by the sputter generation process. 11 refs., 8 figs.
1989-01-01
International Nuclear Information System (INIS)
A 20-MeV proton accelerator is developed by Proton Engineering Frontier Project (PEFP) at Korea Atomic Energy Research Institute (KAERI). The 20MeV accelerator consists of 50keV proton injector, 3MeV RFQ (Radio frequency Quadrupole), 20MeV DTL (Drift Tube Linac) and 20MeV beam line. The beam profile was measured at the end of the 20MeV beam line with wire scanner. Moreover the beam emittance was calculated from the quad scan method using beam line quadrupole magnets. In this paper, the beam profile measurement results are presented and the emittance measurement from the quad scan method is discussed
2010-10-01
Propagation of Surface Ripples on Pyrochlore Single Crystals Induced by Ion Beam Bombardment
Energy Technology Data Exchange (ETDEWEB)
The morphological evolution of ripples formed on the surface of Cd2Nb2O7 pyrochlore single crystals by focused ion beam (FIB) bombardment was investigated using in situ electron microscopy. At high ion fluences and off-normal bombardment angles, faceted surface ripples with a terrace-like structure were observed. The ripple propagation direction was oriented along the projected ion beam direction at incident angles ranging from 35 to 65 following high-dose ion bombardment. One side of the terrace was found to be perpendicular to the incident ion beam direction, while the other side was parallel to the ion beam. The terrace propagation velocity and direction were determined and interpreted on the basis of this asymmetric structure. A model based on the propagation of a shock wave ...
2009-08-01
Collective ion acceleration by a reflexing electron beam: model and scaling. Memorandum report
Energy Technology Data Exchange (ETDEWEB)
Analytical and numerical calculations are presented for a reflexing electron beam type of collective ion accelerator. These results are then compared to those obtained through experiment. By constraining one free parameter to experimental conditions, the self-similar solution of the ion energy distribution agrees closely with the experimental distribution. Hence the reflexing beam model appears to be a valid model for explaining the experimental data. Simulation shows in addition to the agreement with the experimental ion distribution that synchronization between accelerated ions and electric field is phase unstable. This instability seems to further restrict the maximum ion energy to several times the electron energy.
1984-05-11
Long pulse extraction of deuterium negative ion beams from the Kamaboko ion source
Energy Technology Data Exchange (ETDEWEB)
Operation at ITER specifications of the Kamaboko III ion source for 1000 second pulses of deuterium negative ion beams is underway on the MANTIS test stand. Efficient production of negative ions at low arc power requires injection of cesium into the source, temperature control of the plasma grid, and a period of conditioning of several days. Two different concepts of temperature regulated plasma grids are currently being tested. (author)
1998-07-01
Energy Technology Data Exchange (ETDEWEB)
A general expression for the current-density distribution of a focused-ion beam (FIB) in the chromatic-aberration region is set up in the form of a definite integral. With the experimentally obtained ion-energy distribution of a liquid-metal ion source, its contribution to the FIB current-density distribution is estimated. Calculated results explain the wide-exponential tail of a FIB.
1987-09-01
International Nuclear Information System (INIS)
A general expression for the current-density distribution of a focused-ion beam (FIB) in the chromatic-aberration region is set up in the form of a definite integral. With the experimentally obtained ion-energy distribution of a liquid-metal ion source, its contribution to the FIB current-density distribution is estimated. Calculated results explain the wide-exponential tail of a FIB.
Wrinkled hard skins on polymers created by focused ion beam
UK PubMed Central (United Kingdom)
A stiff skin forms on surface areas of a flat polydimethylsiloxane (PDMS) upon exposure to focused ion beam (FIB) leading to ordered surface wrinkles. By controlling the FIB fluence and area of exposure...Full Text Available
2007-01-23
High intensity inverted sputter source
Energy Technology Data Exchange (ETDEWEB)
The electrode structure of an inverted cesium sputtering negative ion source has been modified to produce a convergent Cs/sup +/ beam. The intensities of negative ion beams produced with this electrode structure are approximately an order of magnitude greater than previously obtained.
1982-08-15
International Nuclear Information System (INIS)
A semi-empirical relation which can be used to determine the total attenuation cross sections of samples containing H, C, N and O in the energy range 145-1332 keV has been derived based on the total attenuation cross sections of several sugars, amino acids and fatty acids. The cross sections have been measured by performing transmission experiments in a narrow beam good geometry set-up by employing a high-resolution hyperpure germanium detector at seven energies of biological importance such as 145.4 keV, 279.2 keV, 514 keV, 661.6 keV, 1115.5 keV, 1173.2 keV and 1332.1 keV. The semi-empirical relation can reproduce the experimental values within 1-2%. The total attenuation cross sections of five elements carbon, aluminium, titanium, copper and zirconium measured in the same experimental set-up at the ...
2006-09-28
R and D for the development of negative ion beams of halogens
Energy Technology Data Exchange (ETDEWEB)
Ion beams of halogens can be produced either positively or negatively charged, depending on the employed ion source. At CERN-ISOLDE, although positively charged fluorine and astatine can be obtained from a hot plasma ion source, they are often contaminated by isobars and molecular sidebands. This has generated a request from the scientific community for fluorine and astatine negative ion beams free of contaminants. The high selectivity ensured by the surface ionisation process also makes negative beams of chlorine, bromine and iodine highly attractive. However, the efficiency figures for negative surface ionisation of fluorine and astatine were lower than the ones from the hot plasma. Here we report our R and D on new surface ion sources suitable for the production of negative halogen beams.
2008-10-15
Collisional Cooling of Negative Ion Beams
Investigations have been conducted to determine the feasibility of using collisional cooling for reducing the energy spreads and, consequently, the emittances of negative-ion beams. We have designed a gas-filled RF-quadrupole ion cooler equipped with provisions for retarding energetic negative ion beams to energies below thresholds for electron detachment at injection and for re-acceleration to high energies after the cooling process. The device has been used to cool O{sup -} and F{sup -} ion beams with initial energy spreads, {Delta}E > 10 eV to final energy spreads, {Delta}E {approx} 2 eV FWHM. Overall transmission efficiencies of {approx}14% for F{sup -} beams have been obtained. Experimental results show that electron detachment is the major loss mechanism for negative ions.
2001-06-29
Collisional Cooling of Negative Ion Beams
Energy Technology Data Exchange (ETDEWEB)
Investigations have been conducted to determine the feasibility of using collisional cooling for reducing the energy spreads and, consequently, the emittances of negative-ion beams. We have designed a gas-filled RF-quadrupole ion cooler equipped with provisions for retarding energetic negative ion beams to energies below thresholds for electron detachment at injection and for re-acceleration to high energies after the cooling process. The device has been used to cool O{sup -} and F{sup -} ion beams with initial energy spreads, {Delta}E > 10 eV to final energy spreads, {Delta}E {approx} 2 eV FWHM. Overall transmission efficiencies of {approx}14% for F{sup -} beams have been obtained. Experimental results show that electron detachment is the major loss mechanism for negative ions.
2001-06-29
Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors
International Nuclear Information System (INIS)
English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,
2006-03-27
Production of rare-earth atomic negative ion beams in a cesium-sputter-type negative ion source
International Nuclear Information System (INIS)
The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several ...
2007-08-01
Motion compensation with a scanned ion beam: a technical feasibility study
UK PubMed Central (United Kingdom)
BackgroundIntrafractional motion results in local over- and under-dosage in particle therapy with a scanned beam. Scanned beam delivery offers the possibility to compensate target...Full Text Available
Stability of space-charge neutralized beams
Consideration is given to the stability of negative ion beams which are neutralized through ionization of a background gas. Two types of instabilities are examined. First, beam-plasma instabilities are analyzed with the dispersion relation showing that they are unimportant if the beam velocity is less than the electron thermal velocity. Second, results of a computer simulation on the flow of a cylindrical beam and the resulting background plasma show that when the background neutral gas density is less than or approximately equal to a critical density as instability occurs. This critical density is the density that would be needed to space-charge neutralize the beam if the positive ions were not retarded by the beam. An approximate dispersion relation indicates that the nature of the instability is a transverse ...
1977-09-22
rf-driven ion sources for industrial applications (invited) (abstract)
The Plasma and Ion Source Technology Group at the Lawrence Berkeley National Laboratory have been developing rf-driven ion sources for the last two decades. These sources are being used to generate both positive and negative ion beams. Some of these sources are operating in particle accelerators such as the Spallation Neutron Source (SNS) at Oak Ridge, while others are being employed in various industrial ion beam systems. There are four areas where the rf-driven ion sources are commonly used in industry. (1) In semiconductor manufacturing, rf-driven sources have found important applications in plasma etching, ion beam implantation, and ion beam lithography. (2) In material analysis and surface modification, miniature rf-ion sources can ...
2008-02-15
Selection and design of ion sources for use at the Holifield radioactive ion beam facility
Energy Technology Data Exchange (ETDEWEB)
The Holifield Radioactive Ion Beam Facility now under construction at the Oak Ridge National Laboratory will use the 25 MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility. The choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. Although direct-extraction negative ion sources are clearly desirable, ...
1994-06-01
Development of laser-ion beam photodissociation methods
Energy Technology Data Exchange (ETDEWEB)
During this report period our research efforts have concentrated on studies of the dissociation reactions of model peptides and other biologically important molecules. In addition, a considerable amount of research effort has been directed toward improving the apparatus used for laser-ion beam photodissociation. The instrumental improvements include some changes on the original apparatus, but most of this effort involved designing a second generation laser-ion beam photodissociation instrument.
1990-08-01
International Nuclear Information System (INIS)
The original purpose of this research was an investigation into the use of slow space charge waves on weakly relativistic electron beams for ion acceleration. The work had three main objectives namely, the development of a suitable ion injector, the growth and study of the properties of slow space charge waves on an electron beam, and a combination of the two components parts into a suitable proof of principle demonstration of the wave accelerator. This work focusses on the first two of these objectives.
A magnetically insulated negative ion source for neutral beam heating
Energy Technology Data Exchange (ETDEWEB)
A new, magnetically insulated negative ion source has recently been discovered which can produce pulsed negative ion beams (H/sup -/, Li/sup -/, and C/sup -/) with intensities of 100-300 A/cm/sup 2/ at 1-4 MeV. This source may provide the basis for a high energy neutral beam system for heating large tokamaks.
1983-08-01
Technique for the removal of electrons from an extracted, pulsed, H{sup {minus}} ion beam
Energy Technology Data Exchange (ETDEWEB)
A small, permanent-magnet insert structure for the removal of electrons from pulsed, extracted, negative ion beams has been developed at Lawrence Berkeley National Laboratory. The device was computer modeled and designed for an extraction field strength of 3 kV/mm. The testing was carried out with a rf driven multicusp ion source optimized for the production of H{sup {minus}} ions and pulsed at a few Hz with pulse widths of several hundreds of {mu}s. It is demonstrated that the insert structure together with a collar can remove over 98{percent} of electrons from the extracted H{sup {minus}} ion beam without any significant deterioration of the H{sup {minus}} ion output. Application to other negative ion beams can be expected from this magnetic collar insert. {copyright} {ital 1996 American Institute ...
1996-10-01
Using focused ion beam damage patterns to photoelectrochemically etch features in III-V materials
Energy Technology Data Exchange (ETDEWEB)
A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.
1986-03-10
Solenoid transport for heavy ion fusion
Energy Technology Data Exchange (ETDEWEB)
Solenoid transport of high current, heavy ion beams is considered for several stages of a heavy ion fusion driver. In general this option is more efficient than magnetic quadrupole transport at sufficiently low kinetic energy and/or large e/m, and for this reason it has been employed in electron induction linacs. Ideally an ion beam would be transported in a state of Brillouin flow, i.e. cold in the transverse plane and spinning at one half the cyclotron frequency. The design of appropriate solenoids and the equilibrium and stability of transported ion beams are discussed. An outline of application to a fusion driver is also presented.
2004-06-15
Energy Technology Data Exchange (ETDEWEB)
The results of an investigation on the production of Group IIA atomic and molecular negative ion beams formed in a cesium-sputter negative ion source are presented. The sputtering material was formed by pressing pellets of stoichiometric mixtures of the Group IIA element carbonates and 10% copper powder. Negative ions of several alkaline-earth elements and their oxides have been observed. Beam intensities as high as 180 pA have been observed for Sr{sup -}and 20 nA for SrO{sup -}. (orig.).
1996-09-11
International Nuclear Information System (INIS)
The results of an investigation on the production of Group IIA atomic and molecular negative ion beams formed in a cesium-sputter negative ion source are presented. The sputtering material was formed by pressing pellets of stoichiometric mixtures of the Group IIA element carbonates and 10% copper powder. Negative ions of several alkaline-earth elements and their oxides have been observed. Beam intensities as high as 180 pA have been observed for Sr"-and 20 nA for SrO"-. (orig.).
1996-09-01
Development of a chemically assisted micro-beam etching system for three-dimensional microanalysis
Energy Technology Data Exchange (ETDEWEB)
A chemically assisted micro-beam etching system for 3D microanalysis was designed. Using chemically assisted ion beam etching (CAIBE) method with FIB shave-off scanning, about several hundred micrometers clean cross-section will be acquired in a few hours. We use focused ion beam (FIB) and electron beam (EB) as micro-beams, halogen or halide mainly as reactive gases. The apparatus was manufactured based on this concept. We found that the FIB, Q-MS and SED worked as expected. The instrumentation has been completed.
2003-01-15
Energy Technology Data Exchange (ETDEWEB)
The centroid and envelope dynamics of a high-intensity charged particle beam are investigated as a beam smoothing technique to achieve uniform illumination over a suitably chosen region of the target for applications to ion-beam-driven high energy density physics and heavy ion fusion. The motion of the beam centroid projected onto the target follows a smooth pattern to achieve the desired illumination, for improved stability properties during the beam-target interaction. The centroid dynamics is controlled by an oscillating "wobbler", a set of electrically-biased plates driven by RF voltage. __________________________________________________
2010-04-28
The characteristics of surface oxidation and corrosion resistance of nitrogen implanted zircaloy-4
International Nuclear Information System (INIS)
This work is concerned with the development and application of ion implantation techniques for improving the corrosion resistance of zircaloy-4. The corrosion resistance in nitrogen implanted zircaloy-4 under a 120 keV nitrogen ion beam at an ion dose of 3 x 10"1"7 cm"-"2 depends on the implantation temperature. The characteristics of surface oxidation and corrosion resistance were analyzed with the change of implantation temperature. It is shown that as implantation temperature rises from 100 to 724 C, the colour of specimen surface changes from its original colour to light yellow at 100 C, golden at 175 C, pink at 300 C, blue at 440 C and dark blue at 550 C. As the implantation temperature goes above 640 C, the colour of surface changes to light black, and the surface becomes a little rough. The corrosion resistance of zircaloy-4 implanted with nitrogen is sensitive to the ...
Dependence of proton beam polarization on ion source transition configurations
Energy Technology Data Exchange (ETDEWEB)
The polarization of extracted SATURNE II proton beam as a function of different ion source configurations was studied. Two distinct experiments were necessary for this purpose. In the first one, the left-right instrumental asymmetry of the beam polarimeter was determined using an unpolarized beam. In the second one this correction factor was applied to asymmetries measured with the beam from the polarized ion source in all polarization states. The measurements were carried out at the proton beam kinetic energy 0.80 GeV, where the pp-elastic scattering analyzing power is near its maximum. The results confirmed that the two so-called ``unpolarized states`` of the source were polarized to several percent, whereas the absolute values of the beam polarizations in the so-called ``polarized states`` were equal and opposite. It ...
1997-11-11
Energy Technology Data Exchange (ETDEWEB)
A summary of the topics covered in papers presented at the 1995 Brookhaven joint conference on production, neutralization, and application of negative ion beams is given. The conference topics covered included plasma ion sources, plasma seeding of these sources for increased ion production, beam extraction and transport, computer simulation and design studies, and operation of existing and experimental ion source facilities. Application of the sources to accelerator, tokamak, and thin film deposition are discussed. (AIP) {copyright} {ital 1996 American Institute of Physics.}
1996-07-01
Development of heavy-ion irradiation technique for single-event in semiconductor devices
Energy Technology Data Exchange (ETDEWEB)
Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)
1997-03-01
International Nuclear Information System (INIS)
Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, ...
2004-06-01
Energy Technology Data Exchange (ETDEWEB)
A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.
1999-01-01
Energy Technology Data Exchange (ETDEWEB)
A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.
1999-08-31
Halogens for negative ion beams and ion-ion plasmas
International Nuclear Information System (INIS)
Negative ions have attractive features as drivers for inertial confinement fusion, because they will avoid electron cloud effects, and could be efficiently photodetached to neutrals after the final focus, which could also be beneficial in heating warm dense matter targets. The halogens have large electron affinities, and thus should be able to produce high current densities of relatively robust negative ions. Recent experiments comparing chlorine beams to argon beams using the same source, extraction optics, and diagnostics have demonstrated that Cl"- beams can be produced with similar emittance to Ar"+ beams, and with about 34 the current density from the same configuration. The observed effective beam temperature of about 13eV, and the similarity of current densities show that negative halogen beams can meet the ...
2007-07-01
Energy Technology Data Exchange (ETDEWEB)
The present invention concerns a negative ion source electrode which can be preferably used in a neutral particle injection device using negative ions for a thermonuclear reactor. Negative ion beams are deflected to the direction opposite to the deflecting direction by magnetic fields by using an electron suppression electrode having electrode holes with the position previously displaced before negative ion beams are accelerated to have a high energy by an accelerator thereby correcting the orbit of the negative ion beams easily. In addition, since the deflection correction electrode having the electrode holes is disposed, a proper voltage is applied to the deflection correction electrode to correct the orbit of the negative ion beams conveniently. Since the deflection correction ...
1997-01-17
Energy Technology Data Exchange (ETDEWEB)
We report experimental evidence of a previously unseen species-dependent effect in the transverse emittances of momentum-analyzed {sup 28}Si{sup {minus}}, {sup 58}Ni{sup {minus}}, and {sup 197}Au{sup {minus}} negative-ion beams generated by cesium-ion sputtering. The differences in the emittances are found to be principally correlated with differences in the energy spreads in the respective ion beams, which have their origins in the sputter-ejection negative-ion formation process. The experimental equipment and techniques utilized for emittance data acquisition and analysis, and evidence for a species-dependent effect in the emittances and brightnesses of the subject ion beams, are presented in this paper.
1990-02-01
Review of JT-60U experimental results from February to October, 1999
International Nuclear Information System (INIS)
In 1999, the plasma parameters of reversed shear (RS) plasmas had been extended in 1) DT-equivalent fusion power gain Q_D_T"e"q - 0.5 (n_D(0)#tau#_ET_i(0) - 4x10"2"0 m"-"3#centre dot#keV#centre dot#s) for 0.8 s and 2) full non-inductive current drive with 80% of the bootstrap current fraction. Physics of the internal transport barriers (ITBs) in RS plasmas, including the energy transport and the formation of ITB, were extensively studied. A nearly full current drive (92% non-inductively) was obtained with negative ion based neutral beam (NNB) injection (360 keV, 3.4 MW) in a high #beta#_p H-mode plasma (I_p=1.5 MA, B_T=3.7 T, q_9_5=4.2) with high plasma performance (#beta#_N=2.4 and H_8_9=2.56). Rise in the central electron temperature (T_e - 9 keV) resulted in the current drive efficiency #eta#_C_D of NNB reached 1.3x10"1"9 A/W/m"2, the highest for the neutral beam current drive. ...
1994-06-01
Focused ion beam techniques for fabricating geometrically-complex components and devices.
Energy Technology Data Exchange (ETDEWEB)
We have researched several new focused ion beam (FIB) micro-fabrication techniques that offer control of feature shape and the ability to accurately define features onto nonplanar substrates. These FIB-based processes are considered useful for prototyping, reverse engineering, and small-lot manufacturing. Ion beam-based techniques have been developed for defining features in miniature, nonplanar substrates. We demonstrate helices in cylindrical substrates having diameters from 100 {micro}m to 3 mm. Ion beam lathe processes sputter-define 10-{micro}m wide features in cylindrical substrates and tubes. For larger substrates, we combine focused ion beam milling with ultra-precision lathe turning techniques to accurately define 25-100 {micro}m features over many meters of path length. In several cases, we combine the feature ...
2004-03-01
Fabrication of nanometer structures by means of a fine-focused ion beam
International Nuclear Information System (INIS)
Focused Ion Beams are an important approach for nanostructure fabrication in the semiconductor industry and material sciences. Applications in sputtering and ion induced deposition of materials are investigated. The IMSA FIB system equipped with the high resolution Orsay Physics CANION M31plus ion column with current densities up to 10 A/cm"2 including a gas injection system is applied. In this work the ion beam induced chemical vapour deposition of tungsten, wherefore tungsten hexacarbonyl as precursor gas is used for a first investigation. Conductive tungsten-nanowires with smallest cross-section upon a substrate of Si and SiO_2 are produced. The ion beam parameters of this focused ion beam system are optimized for the metal deposition. A short insight in the theory of layer ...
2000-03-01
Radio frequency He/sup -/ source and a source of negative ions by cesium sputtering
Energy Technology Data Exchange (ETDEWEB)
Two sources of negative ions are described. An rf source produces up to 14 ..mu..A beams of He/sup -/ by charge exchange in Rb vapor. The other Source of Negative Ions by Cesium Sputtering (SNICS) produces a wide variety of negative ion beams in the ..mu..A range. Two important features of SNICS are its simple, compact construction and its very good beam emittance (2 to 4..pi..mm mrad MeV/sup 1/2/). Both sources have lifetimes >200 hours and they are used extensively on the Wisconsin EN tandem.
1981-04-01
Production of intense negative ion beams in magnetically insulated diodes
Energy Technology Data Exchange (ETDEWEB)
Production of intense negative ion beams in magnetically insulated diodes was studied in order to develop an understanding of this process by measuring the ion-beam parameters as a function of diode and cathode plasma conditions in different magnetically insulated diodes. A coral diode, a racetrack diode, and an annular diode were used. The UCI APEX pulse line, with a nominal output of 1MV, 140kA, was used under matched conditions with a pulse length of 50 nsec. Negative-ion intensity and divergence were measured with Faraday cups and CR-39 track detectors. Cathode plasma was produced by passive dielectric cathodes and later, by an independent plasma gun. Negative-ion currents had an intensity of a few A/cm{sup 2} with a divergence ranging between a few tenths milliradians for an active TiH{sub 2} plasma gun and 300 milliradians for a passive polyethelene cathode. Negative ...
1988-01-01
Development of liquid metal ion sources, focused ion beam and their applications
International Nuclear Information System (INIS)
To suit the needs of development for manufacture VLSI, we started to investigate liquid metal ion sources (LMIS) and focused ion beam (FIB) in 1984. Many kinds of emitters viz. neddle type, co-axial type and capillary type of Ga and Au LMIS and three kinds of eutectic alloys LMIS (Au-Si, Au-Si-Be, Pd-Ni-Si-Be-B) have been tested. A program which can calculate focused ion guns has been written. Four kinds of foused ion guns have been operated, a fine beam with diametic 0.1 #mu#m is obtained. Using the FIB a scanning ion microscope has been constructed. Some tests of etching and self-developing of nitrocellulose are described. (author).
Intensity of auger-emission of silicon from binary compounds in the ion auger spectroscopy
International Nuclear Information System (INIS)
Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.
Energy Technology Data Exchange (ETDEWEB)
Isobaric contaminants are often problematical in accelerated negative ion beams for research at certain radioactive ion beam (RIB) and accelerator mass spectrometry (AMS) facilities since their presence in low-intensity rare isotopic beams seriously compromise experimental results. This article describes a non-resonant, laser-based photo-detachment apparatus for use at these facilities, which, according to calculations efficiently removes isobaric contaminants from these beams. The advantage of the system for isobaric contaminant removal over other systems proposed to date lies in its ability to efficiently capture easily transportable energetic negative ion beams with low, intermediate or high energy spreads by a superconducting solenoid magnetic field. The ability to change the diameter of captured ...
2008-09-01
Ion beam induced charge imaging of epitaxial GaN detectors
Energy Technology Data Exchange (ETDEWEB)
We report the use of ion beam induced charge imaging to characterise the charge signal uniformity of epitaxial gallium nitride radiation detectors. The detectors were fabricated from 2 {mu}m thick semi-insulating gallium nitride, grown by MOCVD on a sapphire substrate. A carrier concentration of 1.4x10{sup 15} cm{sup -3} was measured using capacitance-voltage measurements. Ion beam induced charge imaging was carried out with a 2 MeV alpha particle beam focussed to a 3 {mu}m diameter and raster scanned across the device. The resulting ion beam images show excellent charge signal uniformity in this material with no evidence of material defects or polycrystalline structure on the micrometer length scale. No evidence of charge signal trapping was observed in these devices.
2004-09-21
Controlled manipulation of carbon nanopillars and cantilevers by focused ion beam
International Nuclear Information System (INIS)
We explore a novel phenomenon of focused ion beam (FIB) induced bending of carbon nanopillars or cantilever structures. The bending occurs towards the ion beam during scanning. The explanation of this bending has been sought on the basis of a model which considers temperature rise and gradients caused by the impinging ion beam. The process is controllable and reversible, which makes it highly suitable for in situ manipulation to make desired 3D shapes by the piecewise bending of the nanopillars and cantilever structures during their fabrication using electron beam or FIB chemical vapor deposition (EB-CVD or FIB-CVD). Its usefulness in the fabrication of nanosize mechanical components has been demonstrated by making a branch structure from a single cantilever.
2008-05-21
Beam emittance measurements of ORNL negative ion sources
Energy Technology Data Exchange (ETDEWEB)
The emittances of hydrogen and deuterium negative ion beams produced by volume ion sources have been measured in a transverse plane normal to the beam trajectory. The extraction voltage was varied from 10 to 40 kV, and the transverse magnetic field in the Penning discharges was varied from 0.1 to 0.2 T. Measurements were made on beams with current densities up to 60 mA/cm/sup 2/ at Oak Ridge National Laboratory with an emittance scanner originally developed at Los Alamos National Laboratory. The beam profile at the scanner can be used to improve the accuracy of the emittance measurements. Other factors affecting emittance measurements are discussed. This analysis may be applicable to other ion sources. 6 figs.
1989-01-01
Collisional cooling of negative-ion beams
Energy Technology Data Exchange (ETDEWEB)
Studies have been conducted to determine the feasibility of using collisional cooling for reducing emittances and energy spreads in negative-ion beams to levels commensurate with effective isobaric purification with conventional high-resolution electromagnetic isobar separators as required for use at the Holifield Radioactive Ion Beam Facility (HRIBF). We have designed a gas-filled radio frequency quadrupole ion cooler equipped with provisions for retarding energetic negative-ion beams to energies below thresholds for electron detachment at injection and for re-acceleration to initial energies after the cooling process. The device has been used to cool several ion beams with initial energy spreads, {delta}E>10 eV to final energy spreads, {delta}E{approx}2 eV FWHM, including O{sup -} and F{sup ...
2002-01-01
Energy Technology Data Exchange (ETDEWEB)
This paper reports on the third workshop on the development of neutral-beam injectors held from 19-23 October 1981 at Gatlinburg, Tennessee, USA. The programme of the workshop was devoted to the development of positive-ion-based neutral injectors, although several techniques for producing negative ion beams were also discussed.
1982-03-01
Using the in situ lift-out technique to prepare TEM specimens on a single-beam FIB instrument
International Nuclear Information System (INIS)
Transmission electron microscope (TEM) specimens are today routinely prepared using focussed ion beam (FIB) instruments. Specifically, the lift-out method has become an increasingly popular technique and involves removing thin cross-sections from site-specific locations and transferring them to a TEM grid. This lift-out process can either be performed ex situ or in situ. The latter is mainly carried out on combined dual-beam FIB and scanning electron microscope (SEM) systems whereas conventional single-beam instruments often are limited to the traditional ex situ method. It is nevertheless desirable to enhance the capabilities of existing single-beam instruments to allow for in situ lift-out preparation to be performed since this technique offers a number of advantages over the older ex situ method. A single-beam FIB instrument was therefore modified to ...
2008-08-01
Precise measurement of a focused ion beam profile
Energy Technology Data Exchange (ETDEWEB)
The profile of focused boron ion beam (FIB) from a liquid metal ion source was determined by MOS device characteristics and resist exposure experiments. A focused boron ion beam was line-scanned into the middle of the channel region along the source to drain direction of a MOSFET, and the effective channel width is determined from electrical measurements. PMMA resist was also exposed by a line-scanned boron FIB and the developed contour was observed by a SEM. The profile of the focused boron ion beam with a diameter of around 0.2 ..mu..m was determined by these two methods and it was found to have about a 1 ..mu..m wide tail at around three orders of magnitude below the peak current density region. The profile difference between the two measurements are attributed to the boron diffusion in silicon by subsequent heat-treatments during device ...
1987-06-01
Influence of ion-beam carbon-fiber surface treatment on the angle of wetting by epoxy oligomers
International Nuclear Information System (INIS)
The influence of the regimes of modification of carbon fibers by an argon ion beam on the change in the angle of their wetting by an epoxy oligomer has been investigated. It has been shown that ion-beam treatment of carbon fibers leads to a considerable decrease in the wetting angles (the difference between the wetting angles for non modified and modified fibers is up to 32.2-38.7). Accordingly, there is also an increase in the value of the equilibrium work of adhesion by 36.2-41.6% in the contact zone. It has been established that ion-beam treatment of carbon fibers by argon ions leads to an increase in the shear strength when microplastics based on them are formed. (authors)
Collective methods of ion acceleration using intense relativistic electron beams (IREB) have stimulated a great deal of interest in the past few years. The main virtue of an IREB collective ion accelerator is the high internal electric field strength. The primary drawback has been an insufficient ion energy gain or inadequate scaleability. An extensive study for generating a high quality electron beam has been done and is presented in Section 2. In Section 3 an intense ion injector study was conducted by the method of computer simulation. The last addition to the proposal was a design for producing a toroidal magnetic field. This field will be needed in a future study of high energy and high current electron beams.
1981-02-01
Production by surface sputtering and acceleration of heavy negative ions in tandem accelerators
Energy Technology Data Exchange (ETDEWEB)
The main physical processes allowing negative ion production by surface sputtering for further acceleration in tandem acceleration are briefly reviewed. The sputtering yield and the probability of negative ion ejection are discussed. The properties of negative ion beams for an efficient acceleration in tandem accelerators are also discussed, with an emphasis on space charge problems. The main features and performances of the heavy negative ion injector of the Bucharest tandem accelerator are given.
1992-10-05
Energy Technology Data Exchange (ETDEWEB)
The apex dimensions and length are calculated as a function of current for the ion-emitting jet in liquid-metal ion sources (LMIS). The results agree well with observations. Since the final expressions are analytical, they give more insight into the fundamental mechanisms involved than do numerical calculations. Some implications of the model are discussed concerning focused ion beam (FIB) systems employing LMIS. (author).
1991-12-14
Versatile high intensity plasma sputter heavy negative ion source
Energy Technology Data Exchange (ETDEWEB)
A multicusp magnetic field plasma surface ion source, normally used for H/sup -/ ion beam formation, has been utilized for the generation of high intensity, pulsed, heavy negative ion beams suitable for a variety of uses including tandem electrostatic accelerator/synchrotron injection applications. Sputter probe voltage limited total ion currents of 5.5, 8.2, 5.1 and 4.5 mA (peak intensity) have been produced from Au, Cu, Ni and CuO sputter probes, respectively. The mass distributions of these ion beams are found to be dominated by Au/sup -/, Cu/sup -/, Ni/sup -/ and O/sup -/ atomic species, respectively. The source offers the interesting prospect of providing cw negative ion beams at mA intensity levels of the commonly used semiconducting material dopants (e.g. B/sup -/, P/sup ...
1988-07-01
The production and destruction of negative ions
Energy Technology Data Exchange (ETDEWEB)
During the present grant period we have continued our study of the photodetachment of atomic negative ions using cross-beam photoelectron detachment spectroscopy. The experimental technique involves the measurement of, under conditions of good energy and angular resolution, kinetic energies, yields and angular distributions of photoelectrons ejected from the interaction region between perpendicularly crossed laser and negative ion beams. 6 figs.
1990-01-01
Neutralization of negative ion beams by a gas dynamic laser
Energy Technology Data Exchange (ETDEWEB)
The possibility of applying the near infrared gas dynamic lasers (GDL) for neutralization of negative ion beams is examined. A criterion of neutralization is suggested. The use of the criterion makes it possible to select an optically active medium for a negative ion neutralization. To demonstrate the method media containing hydrohalogens as imitating molecules are taken. ((orig.))
1994-11-01
The propagation of relativistic heavy ions in multielement beam lines.
We describe calculations of the energy loss, range, stopping power, multiple scattering, and other related properties of a high-energy heavy-ion beam at any one of a set of beam line elements. A beam line element (e.g., any beam modification, detection, or control device) is characterized by its thickness, areal density, aperture, and function. The loss of multiply scattered particles to any finite-aperture detector is calculated in the small-angle approximation, and the position of the Bragg peak, as given by particles stopping in the second of two ionization chambers used for Bragg curve measurements, is estimated. A general purpose computer program, PROPAGATE, has been written to allow addition, deletion, and modification of the beam line elements used in the calculation and to provide a convenient means of repeating such calculations for arbitrary ...
The Study of Phosphors Efficiency and Homogeneity using a Nuclear Microprobe
Energy Technology Data Exchange (ETDEWEB)
Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with ...
2000-12-08
Intense negative-ion beams extracted from an ECR ion source coupled to a charge exchange canal
Energy Technology Data Exchange (ETDEWEB)
Electron cyclotron resonance (ECR) ion sources possess several advantages over ion sources conventionally used for injectors of electrostatic accelerators: improved reliability, high efficiency, simplicity, and the capability of generating bright, high-current ion beams. We have adapted a high-current ECR source originally developed as an injector for a CW RFQ proton linac to serve as a source of intense negative-ion beams for the Tandem Accelerator Superconducting Cyclotron (TASCC) facility at Chalk River. The range of ion species of the source has been extended from H{sup 1+} alone up to Bi{sup 1+}, with both gaseous and nonvolatile feeds. Two intense negative-ion beams of He{sup -} and O{sup -} have been generated so far with the source coupled to a standard charge-exchange canal. We foresee no ...
1993-07-01
Intense negative-ion beams extracted from an ECR ion source coupled to a charge exchange canal
International Nuclear Information System (INIS)
Electron cyclotron resonance (ECR) ion sources possess several advantages over ion sources conventionally used for injectors of electrostatic accelerators: improved reliability, high efficiency, simplicity, and the capability of generating bright, high-current ion beams. We have adapted a high-current ECR source originally developed as an injector for a CW RFQ proton linac to serve as a source of intense negative-ion beams for the Tandem Accelerator Superconducting Cyclotron (TASCC) facility at Chalk River. The range of ion species of the source has been extended from H1+ alone up to Bi1+, with both gaseous and nonvolatile feeds. Two intense negative-ion beams of He- and O- have been generated so far with the source coupled to a standard charge-exchange canal. We foresee no major problems generating ...
1993-09-22
BNL Neutral Beam Development Group. Progress report, FY 1983 and final report
Energy Technology Data Exchange (ETDEWEB)
The BNL Neutral Beam Development Group has been active in the program for the development of high energy, high power neutral beam systems since 1973. These injectors are based on the production, acceleration and neutralization of negative hydrogen or deuterium ions and are supposed to be used for plasma heating and current drive in the next generation of fusion devices. Over the span of 10 years the group has studied plasma-surface type of negative hydrogen ion sources, transport and acceleration of negative ion beams and neutralization of negative ions in gases and plasmas. As the required source parameters (current, pulse length, efficiency) were changing over this period of time, the group developed several types of sources, resulting finally in the design of a steady state device operating with an excellent gas efficiency and having the ...
1984-03-16
Energy Technology Data Exchange (ETDEWEB)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the ...
1997-11-01
International Nuclear Information System (INIS)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of ...
Study on the energy distribution of ion beams extracted from the sputter-type negative-ion source
International Nuclear Information System (INIS)
The energy distribution of ion beams is important especially for low energy ion beam applications. The energy distributions of negative-ion beams produced through secondary ion emission by sputtering were measured and compared with theoretically estimated distributions by use of four different negative-ion production probability equations (modified surface ionization model, exponential velocity dependence model, and our modified exponential velocity dependence models (modified decaying factor model and combination model of velocity dependence and surface ionization)). In the measurements, the energy distributions of C"- and Ag"- beams had a peak at a few to several eV and the full width at half maximum were 15 eV and 11 eV, respectively. These results could be well explained by the estimated ...
1995-10-23
Ion beams in silicon processing and characterization
Energy Technology Data Exchange (ETDEWEB)
General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made ...
1997-05-01
International Nuclear Information System (INIS)
In this work, the effects of the focus ion beam (FIB) milling process on the optical properties of semiconductor nanostructures were investigated. With this aim, a sensitive materials system based on InGaAs/GaAs quantum dots with well known and excellent optical properties was selected for the FIB treatment. The FIB technique was used to locally remove a metallic mask deposited on top of the quantum dot sample. The photoluminescence (PL) signal, collected from the circular openings, was used to infer the possible damage effects of the ion beam on the properties of the dots.
2009-06-24
The application of advanced techniques for complex focused-ion-beam device modification
Energy Technology Data Exchange (ETDEWEB)
Advanced techniques for focused-ion-beam (FIB) device modification have been developed for complex, multistep modifications to circuitry on planar chip technology. Applying gas-assisted etching (GAE) techniques for high-aspect-ratio milling and the selective milling of both conductive and insulating films enhances process latitude. Localized ion-beam-induced deposition of an insulating film provides reconstructive capability in previously modified areas. The application of both techniques for complex device modification on VSLI devices fabricated with CMOS process technology is reviewed. (UK).
1996-12-31
Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system
Energy Technology Data Exchange (ETDEWEB)
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
2005-12-15
Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system
International Nuclear Information System (INIS)
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
2005-12-15
Polarization measurements in the X-ray and gamma-ray energy range can provide crucial information on massive compact objects such as black holes and neutron stars. The Polarized Gamma-ray Observer (PoGO) is a new balloon-borne instrument designed to measure polarization from astrophysical objects in the 30-100 keV range, under development by an international collaboration with members from United States, Japan, Sweden and France. To examine PoGO's capability, a beam test of a simplified prototype detector array was conducted at the Argonne National Laboratory Advanced Photon Source. The detector array consisted of seven plastic scintillators, and was irradiated by polarized photon beams at 60, 73, and 83 keV. The data showed a clear polarization signal, with a measured modulation factor of $0.42 \\pm 0.01$. This was successfully reproduced at the 10% level by the computer simulation package Geant4 after ...
2005-01-01
L. V. BALDWIN &TAL. APPARATUS FOR INCREASING ION ENGINE BEAM DENSITY. Filed Jan. 4, 1963 ... Lionel V. Baldwin. Fort Collins. Colo.. and Vid A. ...
Focused ion beam sculpting curved shapes.
Energy Technology Data Exchange (ETDEWEB)
A focused ion beam (FIB) is used to accurately sculpt predetermined micron-scale, curved shapes in a number of solids. Using a digitally scanned ion beam system, various features are sputtered including hemispheres and sine waves having dimensions from 1-50 {micro}m. Ion sculpting is accomplished by changing pixel dwell time within individual boustrophedonic scans. The pixel dwell times used to sculpt a given shape are determined prior to milling and account for the material-specific, angle-dependent sputter yield, Y({theta}), as well as the amount of beam overlap in adjacent pixels. A number of target materials, including C, Au and Si, are accurately sculpted using this method. For several target materials, the curved feature shape closely matches the intended shape with milled feature depths within 5% of intended values.
2005-02-01
UK PubMed Central (United Kingdom)
The fabrication and characterization of tungsten nanoelectrodes insulated with cathodic electrophoretic paint is described together with their application within the field of neurophysiology....Full Text Available
2005-09-01
Long-life bismuth liquid metal ion source for focussed ion beam micromachining application
International Nuclear Information System (INIS)
Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ...
2008-09-15
Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon
International Nuclear Information System (INIS)
N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code
2001-12-01
Experimental study of beam optics and energy recovery for high-energy electron cooling device
International Nuclear Information System (INIS)
The feasibility of a high-energy electron cooling device has been studied through tests on a prototype of the electron device. The apparatus consists of a pulsed ((20-60) keV, 2#mu#s) electron gun, a drift region 1 m long and of a depressed collector for recovering the electron energy. Tests on beam optics and energy recovery have been performed, a high-energy recovery efficiency has been attained. Experimental results are discussed in this paper.
A beam funnelling demonstration: Experiment and simulation
Energy Technology Data Exchange (ETDEWEB)
Accelerator concepts for heavy-ion fusion require small emittance, high-current beams. Such applications could include funnels in which high-current, like-charged particle beams are interlaced to double beam current while retaining small emittances. The first experimental demonstration confirming the beam dynamics of the funnel principle was recently completed at Los Alamos National Laboratory. A single-leg prototype 5-MeV, H{sup {minus}} funnel was successfully tested. This single-beam demonstration explored physics issues of a two-beam funnel. It contained elements for emittance control, position control, and rf deflection, as well as diagnostics for measurement of beam intensity, position and angle centroids, energy and phase centroids, and transverse and longitudinal phase-space distributions. Results of the ...
1990-01-01
Portable real time neutron spectrometry II
International Nuclear Information System (INIS)
We describe the continued development of a portable, real-time neutron spectrometer. The spectrometer is composed of two distinct detector systems: a Helium 3 gas filled proportional counter for the lower neutron energy interval between 20 KeV and 2 MeV and a bulk silicon solid state detector for the higher energy interval between 2 MeV and 500 MeV. Modeling and experimental results with mono-energetic neutron beams are reported.
2000-01-19
Molar extinction coefficients in aqueous solutions of some alkaline earth chlorides
International Nuclear Information System (INIS)
Molar extinction coefficients for the solid solutes in aqueous solutions of some alkaline earth chlorides such as MgCl_2.6H_2O, CaCl_2, SrCl_2.6H_2O and BaCl_2.2H_2O have been determined at 81, 356, 511, 662, 1173 and 1332 keV energies in different concentration using the narrow beam transmission methods. (author)
1999-12-21
Equilibrium charge and LET of incident heavy ions (Ne and Ar) in hydrogen gas
Energy Technology Data Exchange (ETDEWEB)
When energetic heavy ions traverse a medium, the amount of energy deposited by the ions is closely related to their effective charges. The charge-state fractions of these beams are obtained by solving rate equations for the electron loss and capture processes. By assuming local balance between electron loss and capture, the charge-state distributions, the averge equilibrium charge q, and other properties are obtained as functions of the incident beam velocity. The LET (linear energy transfer) of Ne and Ar ions with energies between 0.01 and 100 MeV/amu is calculatedted using their average equilibrium charge.
1984-09-01
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. ...
1999-03-01
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
International Nuclear Information System (INIS)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 ...
1999-03-01
Energy Technology Data Exchange (ETDEWEB)
An apparatus capable of producing current or voltage controlled positive and negative ion beams in 1-atm oxidizing and nonoxidizing ambients between 25/sup 0/ and 950 /sup 0/C is presented. The apparatus utilizes a point-to-plane corona discharge in the gas phase. Room-temperature experiments revealed that the small differences in ion beam shape between the two polarities is primarily due to the difference in applied voltage required to produce the same current for the two polarities. Due to increased ion mobility and decreased threshold voltage at higher temperatures, a slight broadening of the ion beam current-density profiles for both positive and negative ions is predicted.
1984-09-01
Drift-kink instability induced by beam ions in field-reversed configurations
Energy Technology Data Exchange (ETDEWEB)
The drift-kink instability in field-reversed configurations with a beam component is investigated by means of a three-dimensional particle simulation. The unstable mode with the toroidal mode number n=4 grows with the rate {gamma} {approx} 0.1 - 1.0{omega}{sub ci} for a strong beam current and deforms the plasma profile along the beam orbit in the vicinity of the field-null line. This mode is nonlinearly saturated as a result of the relaxation of current profile. Both the saturation level and the growth rate tend to increase as the ratio of the beam current to the plasma current I{sub b}/I{sub p} increases. It is also found that there is a threshold value of the beam velocity {upsilon}{sub b} {approx} {upsilon}{sub Ti} (ion thermal velocity) for the excitation of the instability. (author)
1999-04-01
Energy Technology Data Exchange (ETDEWEB)
A brief description of a method for producing relatively intense molecular negative ion beams for the difficult Group IIA elements is given which offers considerable improvement in terms of source operation and beam intensity stability over other methods conventionally utilized. It is particularly suited for use in cesium plasma sources such as the Aarhus geometry and axial geometry versions of the source. The method utilizes H/sub 2/ source feed gas for the production of a hydrogen-rich plasma discharge which sputters a negatively biased probe made of elemental or copper alloy material. Negative ion beams of MgH/sub 3//sup -/>=12 ..mu.. A have been realized during routine operation of the 25 MV tandem accelerator. Negative ion beam intensity data, typical source operational parameters, and examples of mass spectra associated with their ...
1983-06-01
On the Metastable Level in Ni-like Ions
Energy Technology Data Exchange (ETDEWEB)
The lowest excited level in Ni-like ions, 3d{sup 9}4s {sup 3}D{sub 3}, decays only via a magnetic octupole (M3) decay. They present calculated values of transition wavelengths and rates for ions with 30 {le} Z {le} 100. They have observed this line in Xe{sup 26+}, using the Livermore EBIT-I electron beam ion trap and a microcalorimeter, as well as a high-resolution flat-field grating spectrometer.
2004-09-14
Negative ion formation in magnetically insulated transmission lines
Energy Technology Data Exchange (ETDEWEB)
Negative ion intensities of over 3 x 10/sup 5/ A/m/sup 2/ at energies of 2 MeV have been measured in a magnetically insulated transmission line. This negative ion production can affect the power flow in multiterawatt pulsed power devices, and may also have applications in the generation of high-intensity neutral or negative ion beams.
1982-05-01
Preparation of Permalloy nanostructures using focused ion beam methods
International Nuclear Information System (INIS)
Focused ion beam (FIB) milling is a powerful and versatile tool for the maskless fabrication of structures and devices at micro- and nanometer scales. The approach is based on the milling and deposition capabilities of a focused ion beam, where the latter is achieved by ion-beam-assisted decomposition of a metalorganic gas precursor of the specific material that has to be deposited. The combination of FIB and scanning electron microscopy in the same unit (so-called dual-beam unit) further expands the capabilities of the approach by the possibility of performing electron-beam-assisted deposition and inspection. Permalloy nanowires with electrical contacts patterned by FIB-Pt deposition were prepared in the dual-beam unit. Various types of notches to pin magnetic domain walls were additionally fabricated by means of FIB. ...
2010-03-21
Effect of triple ion beams in ferritic/martensitic steel on swelling behavior
Energy Technology Data Exchange (ETDEWEB)
The synergistic effects of displacement damage and atomic hydrogen and helium on swelling of the ferritic/martensitic steel, F82H, has been investigated. The irradiation was performed at temperatures between 470 and 600 deg. C to 50 dpa (displacement per atoms) under conditions of simultaneous ion beams consisting of Fe{sup 3+}, He{sup +} and H{sup +} ions or Fe{sup 3+} and He{sup +} ions. The swelling of F82H steel under triple beams with 18 appm He/dpa and 70 appm H/dpa was larger than that under dual beams with 18 appm He/dpa. The swelling in F82H under triple beams increased with decreasing irradiation temperature from 0.1% to 3.2%, while swelling under dual beams was between 0.04% and 0.08%. On the other hand, in the case of triple beam irradiation with a high ratio of gas/dpa, the swelling ...
2002-12-01
Effect of triple ion beams in ferritic/martensitic steel on swelling behavior
International Nuclear Information System (INIS)
The synergistic effects of displacement damage and atomic hydrogen and helium on swelling of the ferritic/martensitic steel, F82H, has been investigated. The irradiation was performed at temperatures between 470 and 600 deg. C to 50 dpa (displacement per atoms) under conditions of simultaneous ion beams consisting of Fe"3"+, He"+ and H"+ ions or Fe"3"+ and He"+ ions. The swelling of F82H steel under triple beams with 18 appm He/dpa and 70 appm H/dpa was larger than that under dual beams with 18 appm He/dpa. The swelling in F82H under triple beams increased with decreasing irradiation temperature from 0.1% to 3.2%, while swelling under dual beams was between 0.04% and 0.08%. On the other hand, in the case of triple beam irradiation with a high ratio of gas/dpa, the swelling tended to increase with ...
2002-12-01
Polarizing a stored proton beam by spin flip?
International Nuclear Information System (INIS)
We discuss polarizing a proton beam in a storage ring, either by selective removal or by spin flip of the stored ions. Prompted by recent, conflicting calculations, we have carried out a measurement of the spin-flip cross section in low-energy electron-proton scattering. The experiment uses the cooling electron beam at COSY as an electron target. The measured cross sections are too small for making spin flip a viable tool in polarizing a stored beam. This invalidates a recent proposal to use co-moving polarized positrons to polarize a stored antiproton beam.
2009-04-27
Longitudinal emittance oscillation in a superconducting drift tube linac
International Nuclear Information System (INIS)
In drift tube linacs a beam energy spread results form the finite beam size. Radial variation of the axial accelerating field induces a beam energy spread, which, in general, will accumulate as the beam passes through successive drift tubes. This paper shows that under some conditions of periodic transverse focusing and longitudinal phase focusing, the correlation between the longitudinal and transverse motion can be used to correct the energy spread. The process of achieving such a correction is first described in a simplified situation, and then demonstrated for a particular tuning using a ray-tracing program which models a low velocity and low charge state linac designed for radioactive ion beams.
1995-05-01
Pitting and intergranular corrosion resistances of nitrogen ion implanted type 304 stainless steel
International Nuclear Information System (INIS)
Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, ...
1998-05-24
EBIT - Electronic Beam Ion Trap: N Divison experimental physics annual report 1995
Energy Technology Data Exchange (ETDEWEB)
The multi-faceted research effort of the EBIT (Electron Beam Ion Trap) program in N-Division of the Physics and Space Technology Department at Lawrence Livermore National Laboratory (LLNL) continues to contribute significant results to the physical sciences from studies with low energy very highly charged heavy ions. The EBIT program attracts a number of collaborators from the US and abroad for the different projects. The collaborations are partly carried out through participating graduate students demonstrating the excellent educational capabilities at the LLNL EBIT facilities. Moreover, participants from Historically Black Colleges and Universities are engaged in the EBIT project. This report describes EBIT work for 1995 in atomic structure measurements and radiative transition probabilities, spectral diagnostics for laboratory and astrophysical plasmas, ion/surface interaction studies, ...
1996-10-01
Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon
Energy Technology Data Exchange (ETDEWEB)
In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed ...
2002-01-01
Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon
International Nuclear Information System (INIS)
In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR ...
2002-01-01
Focused ion beam repair: staining of photomasks and reticles
Energy Technology Data Exchange (ETDEWEB)
Focused ion beam (FIB) repair of chromium defects on photomasks and reticles leaves a post repair stain in the quartz substrate. The wavelength dependent absorption properties of typical stained regions have been measured, showing transition losses up to 80% in the deep uv. A simple model is in good qualitative agreement with the experimental results. (author).
1993-07-14
Fabrication of nanoscale Ti honeycombs by focused ion beam
Energy Technology Data Exchange (ETDEWEB)
Ti honeycombs with the side of 800 and 400 nm were fabricated by focused ion beam (FIB), though the surfaces of the bottom and wall of the Ti honeycombs were rough, as compared with the surfaces of the bottom and wall of the Si honeycomb. It is demonstrated that the nanoscale Ti components can be fabricated in a short time by FIB.
2003-03-15
Energy Technology Data Exchange (ETDEWEB)
Recent development in application of a focused ion beam (FIB) technique to preparation of thin foil specimens for transmission electron microscopy (TEM) observation has been reviewed. Combined technique of FIB/TEM enables one to analyze those microstructures which have been almost impossible or very difficult to analyze so far. (author)
2002-03-01
British Library Electronic Table of Contents (United Kingdom)
Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.
2011-01-01
Channeling studies of radiation damage in metal-silicides
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.
1978-01-01
Channeling studies of radiation damage in metal-silicides
International Nuclear Information System (INIS)
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.
International Nuclear Information System (INIS)
20 nm thick permalloy elements, with dimensions of 500 x 500 nm"2 and 1000 x 200 nm"2, have been fabricated on 50 nm thick silicon nitride substrate by milling using a focussed ion beam (FIB) microscope. The dose of ion beam used for the milling was varied in order to achieve the best definition for the milled areas. The FIB milled elements were characterised physically by atomic force microscopy (AFM) and bright field transmission electron microscopy (TEM) and magnetically by Fresnel imaging on a TEM modified for magnetic imaging. The FIB milled elements were found to have a more irregular edge and lower magnetic fields for events such as vortex annihilation when compared to elements of the same dimensions fabricated by conventional electron beam microscopy (EBL).
2006-02-22
International Nuclear Information System (INIS)
Relative doses of 75 MeV/u "1"2C ion beam after passing through different thickness of degraders were measured with the double ionization chamber method. The degrader's thickness equalized to penetration depth of the beam in water and its Bragg curve were obtained. The measured Bragg curve is compared with that calculated based on a model set up by the authors. Meanwhile, the inactivation effect of the ion beam passing through different thickness of degraders on melanoma (B_1_6) cells was measured, and the corresponding survival fraction data for B_1_6 cells were acquired
1998-08-01
Effects of sawtooth crashes on beam ions and fusion product tritons in JET
Energy Technology Data Exchange (ETDEWEB)
The effect of a sawtooth crash on the radial distribution of the slowing down fusion product tritons and on beams ions, is examined with measurements of the 2.5 MeV and 14 MeV neutron emission line-integrals before and after sawtooth crashes. In deuterium discharges, the 14 MeV neutron production was wholly attributable to burnup of the 1 MeV fusion product tritons from d-d fusion. The local emissivity of 14 MeV neutrons, and hence of the profile of thermalizing tritons, is shown to be only weakly affected by crashes in the discharges studied. This is in contradiction with the apparent behaviour of injected beam ions as deduced from a study of the considerable changes in local emissivity of the 2.5 MeV neutrons. Nevertheless, the behaviour of the fusion product tritons is consistent with the scaling of the beam injected deuterium. 1 ref., 6 figs.
1994-07-01
Direct energy recovery with ac electric power output
Energy Technology Data Exchange (ETDEWEB)
A concept of direct energy recovery system applying an alternating or rotating magnetic field is proposed for a negative-ion-based neutral beam injection system (NNB) to heat a plasma and/or drive a plasma current in a fusion reactor. Nearly same amounts of residual positive and negative hydrogen-isotope ion beams with beam energy of {approx}1 MeV are produced in an NNB using a gas neutralizing cell. Consequently, a recovered energy is obtained directly in the form of ac electric power, if these positive- and negative-ion beams are alternated or rotated and introduced to two or more recovery electrodes in turn by an alternating or rotating magnetic field. This concept will greatly reduce a technological difficulty in regeneration of a recovered electric energy with such a very high voltage. (author).
1994-12-31
International Nuclear Information System (INIS)
The MCNPE-BO and MCNP4 Monte Carlo electron-photon codes were used to calculate the dose equivalent per unit fluence at various depths in tissue-equivalent slab phantoms for broad parallel beams of monoenergetic electrons with energies from 50 keV to 10 MeV. The study was carried out in the framework of the activities of a ICRP/ICRU Joint Task Group with the support of EURADOS WG4 (Numerical Dosimetry). Some preliminary results and comparisons as well as a general discussion on the performances of the codes are presented, demonstrating quite a satisfactory agreement among the results obtained using the two codes and those of other authors. (author).
Multi-beamlet focusing of intense negative ion beams by aperture displacement technique
Energy Technology Data Exchange (ETDEWEB)
Multi-beamlet focusing of an intense negative ion beam has been performed using the beamlet steering by the aperture displacement. The apertures of the grounded grid were displaced as all beamlets of 270 (18 x 15) in the area of 25 cm x 26 cm would be steered to a common point (a focal point) in both the two-stage and the single-stage accelerators. The multi-beamlets were successfully focused and the e-folding half width of 10 cm was achieved 11.2 m downstream from the ion source in both the accelerators. The corresponding gross divergence angle is 9 mrad. The negative ion beamlets are deflected by the magnetic field for the electron deflection at the extraction grid and the deflection direction oppositely changes line by line, resulting in the beam split in the deflection direction. This beamlet deflection was well compensated also using the beamlet steering by the aperture ...
1995-08-01
Focused ion beam machined nanostructures depth profiled by macrochannelling ion beam analysis
International Nuclear Information System (INIS)
High aspect ratio sub-#mu#m periodic structures fabricated by focused ion beam (FIB) lithography have been characterised by Rutherford backscattering spectrometry (RBS) using the macrochannelling technique. The technique overcomes the limitations of complementary techniques such as scanning electron microscopy (SEM) and atomic force microscopy (AFM), which can provide images with sub-#mu#m resolution of just the surface features and not of the deep sub-surface structures, without destructive cross sectioning of the sample. Here RBS macrochannelling with a 2 MeV He"+ ion beam is used to analyse a diffraction grating fabricated by FIB milling an array of 100 nm wide trenches in a 300 nm thick Ag film on a Si substrate. Using the surface structure imaged by SEM and AFM as a starting point, a numerical model for the RBS spectrum from the grating is fitted to the experimental spectrum as a function of the ...
2006-08-01
International Nuclear Information System (INIS)
Electron probe microanalysis (EPMA) offers high sensitivity and high accuracy in quantitative measurements of chemical compositions and mass coverages. Owing to the low detection limits of the wavelength-dispersive technique, monolayers with mass coverages of about 0.05 pg cm z can be detected. Assuming a density of 5 g cm--3 this corresponds to a thickness of 0.1 nm. With these advantages in mind, EPMA was extended to depth profile analysis in the sub-micron range using a surface removal technique. The present paper shows how depth profile analysis can be improved by combining EPMA and the focused ion beam (FIB) technique. The focused ion beam system uses a Ga+ ion beam. The ion beam allows the milling of defined geometries on the nanometer scale, so that very shallow bevels with exactly defined angles in relation to ...
A high-intensity plasma-sputter heavy negative ion source
Energy Technology Data Exchange (ETDEWEB)
A multicusp magnetic field plasma surface ion source, normally used for H/sup /minus//ion beam formation, has been modified for the generation of high-intensity, pulsed, heavy negative ion beams suitable for a variety of uses. To date, the source has been utilized to produce mA intensity pulsed beams of more than 24 species. A brief description of the source, and basic pulsed-mode operational data, (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure), are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low discharge power conditions suggest that sources of this type may ...
1989-01-01
Energy Technology Data Exchange (ETDEWEB)
We report the simultaneous formation of self-assembled surface ripples in Cd{sub 2}Nb{sub 2}O{sub 7} pyrochlore caused by focused ion beam (FIB) patterning and uniformly distributed metallic nanodots induced by phase decomposition under ion bombardment. The characteristic wavelength of the surface ripples is controllable from the nm to the sub-{micro}m scale. High-density Cd metallic nanoparticles, {approx} 5 nm, formed and the distribution of nanoparticles is consistent with the morphological characteristics of the ripple pattern. This approach provides a means of fabricating surface nanostructure with various patterns and a controllable particle size and distribution by combining ion beam-induced phase decomposition with high-precision FIB patterning.
2006-02-01
PHOTON-HADRON INTERACTIONS AT RHIC AND LHC ENERGIES.
Energy Technology Data Exchange (ETDEWEB)
Heavy Ion Collisions at RHIC and LHC energies are potentially an interesting laboratory for the study of QED. In these collisions, a Heavy Ion in one beam sees a highly Lorentz contracted electric field due to an oncoming beam particle. The Electric field reaches a maximum value of E {approx_equal} {gamma}{sub eff} {center_dot} Z {center_dot} e/b{sup 2}, where the apparent Lorentz factor, {gamma}{sub eff} = 2 {center_dot} {gamma}{sub beam}{sup 2} - 1. The collision may be viewed in terms of a flux of photons colliding with a stationary ion target using the equivalent photon approximation, originally introduced by Fermi in 1924. We show that the cross section for Inelastic Electromagnetic Interactions of Heavy Ions are both calculable and have been measured in the first RHIC running period.
2002-03-01
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films
Energy Technology Data Exchange (ETDEWEB)
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.
1982-06-11
Growth meachnisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films
Energy Technology Data Exchange (ETDEWEB)
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.
1982-06-11
The proton microprobe: Applications in the biomedical field
Energy Technology Data Exchange (ETDEWEB)
This book explores the development, present, and future applications of proton microprobes in the micrometer range. Among the topics discussed: the use of proton beams for analytical purposes; techniques of focusing or collimating ion beams; improving and measuring beam spots; the analytical capabilities of the nuclear microprobe in comparison to other micro techniques; and applications and results by several internationally known microprobe laboratories.
1986-01-01
International Nuclear Information System (INIS)
Most surface-acoustic-wave and thin-film optical devices are made by the planar fabrication process. The exposure of the pattern in the polymer film is the first and most crucial step in ensuring desired device geometry, dimensional control, and freedom from pattern distortion. The methods of exposing the polymer film include: optical projection, conventional contact printing, conformable photomask contact printing, holographic recording, scanning electron beam lithography, projection electron lithography, and x-ray lithography. In this paper scanning electron beam lithography, conformable photomask contact printing, holographic recording, and x-ray lithography are discussed. In the last section, ion beam etching of relief structures is discussed.
Energy Technology Data Exchange (ETDEWEB)
Radiotherapy with high-energy carbon ion beams can be more advantageous compared to photons because of better physical dose distribution and higher biological efficiency in tumour cell sterilization. Despite enhanced normal tissue sparing, damage incurred by normal cells at the beam entrance is unavoidable and may affect the progeny of surviving cells in the form of inheritable cytogenetic alterations. Furthermore, the quality of the beam along the Bragg curve is modified by nuclear fragmentation of projectile and target nuclei in the body. We present an experimental approach based on the use of a polymethylmethacrylate (PMMA) phantom that allows the simultaneous exposure to a particle beam of several biological samples positioned at various depths along the beam path. The device was used to measure the biological effectiveness of a 60 MeV/amu ...
2007-06-15
Energy Technology Data Exchange (ETDEWEB)
Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author).
1993-06-01
International Nuclear Information System (INIS)
Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author).
Acoustic response of piezoelectric lead-zirconate-titanate to a 400MeV/n xenon beam
Energy Technology Data Exchange (ETDEWEB)
Characteristics of lead-zirconate-titanate (PZT) elements were studied by directly irradiating them with a 400 MeV/n Xe beam. The elements were sensitive to 10{sup 4} Xe ions and their output amplitudes were proportional to the beam intensity. An ensemble of those output amplitudes displayed a Bragg-curve-like response towards the range of 400 MeV/n Xe ion. We discuss the potential of PZT elements as a radiation detector and their application to high-intensity and high-energy detectors. (author)
2003-03-01
Energy Technology Data Exchange (ETDEWEB)
Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.
1994-10-17
Pulse power considerations for the generation of 45 #mu#s, 200 keV electron beams for CO_2 lasers
International Nuclear Information System (INIS)
A two module electron beam source operating over a wide range of output parameters has been designed and fabricated to be used in conjunction with a pair of electron beam sustained CO_2 lasers. Each module comprised a grid-controlled thermionic electron beam gun including a compact grid pulser for control of the electron beam, a 250 kV thyratron switched modulator for acceleration of the electron beam, a 1 kHz filament heater and a complex computerized control system. The system was designed to reliably produce 45 #mu#s wide electron pulses of 150-200 keV energy, operate at repetition rates of 1-10 pps and current densities of 5-20 mA/cm"2. Additional parameters are listed. The high voltage cathode assembly employs 132 thoriated tungsten filaments distributed over the area of the 250 cm x 10 cm output window. The cathode assembly including the control grids is ...
1989-01-19
Study of the influence of surface carbon on the tribological properties of ion-treated steels
Energy Technology Data Exchange (ETDEWEB)
Samples of 100Cr6 steel were treated by different ion beams in order to study the evolution of their tribological properties. A strong correlation was found between the amount of surface carbon, whatever its origin (contamination, direct C implantation or ion-beam mixing of a deposited carbon layer), and the reduction of the friction coefficient as well as the improvement of the wear resistance. These results are discussed in the framework of a recent statistical model founded on the asperity concept and describing the tribological behaviour of bilayer systems.
1999-01-02
International Nuclear Information System (INIS)
Mass spectrometry was instrumental in the discovery of the fullerenes and the characterization of their special structure (truncated icosahedron). High resolution and high sensitivity mass spectrometry in combination with a crossed molecular beam/electron beam ion source is used here to study a further, very unique property of singly and multiply charged fullerene ions (up to Z=7), i.e. their strong resilience towards decomposition via sequential C_2 evaporation and via Coulomb explosion, respectively. (author).
1994-03-20
A measurement of the cross section for electron impact ionization of Ar"2"+, Kr"2"+ and Xe"2"+
International Nuclear Information System (INIS)
The crossed electron-ion beams technique was used to measure absolute cross sections for single ionization of Ar"2"+, Kr"2"+ and Xe"2"+ ions at electron energies ranging from threshold to 2000 eV. In contrast to some previous measurements, the metastable contents of the ion beams were small even in the case of Xe"2"+. All measured cross section curves show significant contributions from excitation-autoionization and possibly direct ionization of inner-shell electrons. There is evidence for resonance-excitation-double-autoionization in the case of Xe"2"+. (author).
Atomic scale models of Ion implantation and dopant diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.
1999-03-01
Evolution of surface roughness in silicon X-ray mirrors exposed to a low-energy ion beam
International Nuclear Information System (INIS)
The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the ...
2010-05-01
The distribution profile of the chemical structural changes in ion-irradiated polyolefins
Energy Technology Data Exchange (ETDEWEB)
The distribution profiles of the chemical structural changes induced in low density polyethylene(LDPE) irradiated by various ion-beams were obtained by micro-FT-IR measurement. Predominant species induced by ion-beam irradiation were trans-vinylene, hydroxyl group and carbonyl group. It was found that the depth profiles of these species resemble the Bragg curve, but they are rather different from the depth profile of the stopping power calculated by TRIM code. The terminal of the chemical reaction was observed to be deeper than the range calculated by TRIM code for all ion particles. This suggests that the energy profile in the region which the energy of the ion particle becomes lower is very complicated. (author).
1996-11-01
Ion temperature anisotropy in high power helium neutral beam fuelling experiments in JET
Energy Technology Data Exchange (ETDEWEB)
During helium beam fuelling experiments in JET, distinctive anisotropic features have been observed in the velocity distribution function describing both fast and thermal alpha particle populations. During the initial fuelling phase the central helium ion temperature observed perpendicular to the magnetic field is higher than the central electron temperature, while the central helium ion temperature observed parallel to the magnetic field is lower than or equal to the central electron temperature. In order to verify temperature measurements of both perpendicular and parallel lines of sight, other independent methods of deducing the ion temperature are investigated: deuterium ion temperature, deuterium density, comparison with neutron rates and profiles (influence of a possible metastable population of helium). 6 refs., 7 figs.
1994-07-01
International Nuclear Information System (INIS)
The dependences of kinetic energies and peak profiles of multicharged ions of I "q"+ (q = 2-3) and C"2"+ on the laser intensity have been studied in detail by time-of-flight mass spectrometry, those multicharged ions are produced by irradiation of methyl iodide cluster beam with a nanosecond 532 nm Nd-YAG laser. Our experiments show that the kinetic energies released of multicharged ions increase linearly with the laser intensity in the range of 3 x 10"9-2 x 10"1"1 W/cm"2. The peaks of multicharged ions are split to forward ions and backward ions, and the ratio of the backward ions to forward ions decreases exponentially with laser intensity. The decreasing of backward ions is probably due to Coulomb scattering by the heavier I"+ ions when they turn around ...
2006-03-20
Oxygen-concentration dependent enhancement of positive secondary ion emission from silicon
Energy Technology Data Exchange (ETDEWEB)
The enhancement of positive secondary ion yields of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In/sup +/ were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5x10/sup 15/ to 4x10/sup 16/ O-atoms/cm/sup 2/. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si/sup +/ intensity is proportional to c(O)sup(x) (with x=1.4) in the concentration regime, 1.5<=c(O)<=30 at%. The O/sup +/ intensity shows a similar dependence for c(O)> or approx.20 at.%.
1983-12-15
International Nuclear Information System (INIS)
An integrated beam optics-nuclear processes framework is essential for accurate simulation of fragment separator beam dynamics. The code COSY INFINITY provides powerful differential algebraic methods for modeling and beam dynamics simulations in absence of beam-material interactions. However, these interactions are key for accurately simulating the dynamics of heavy ion fragmentation and fission. We have developed an extended version of the code that includes these interactions, and a set of new tools that allow efficient and accurate particle transport: by transfer map in vacuum and by Monte Carlo methods in materials. The new framework is presented, along with several examples from a preliminary layout of a fragment separator for a facility for rare isotope beams.
2010-12-01
Focused ion-beam line profiles: A study of some factors affecting beam broadening
Energy Technology Data Exchange (ETDEWEB)
The current--density profile of a focused ion beam (FIB) has a central peak accompanied by broader ``wings`` that, while unimportant in lithographic applications, can lead to unwanted effects during an implantation operation. The origin of the wings, and hence the best way to minimize them, is not clear and needs further study. We have measured the line profiles of several of the ions available in our FIB machine as a function of a number of variables, under ultrahigh vacuum (UHV) conditions. No effects are observed from changes in emission current or deliberate defocusing of the objective lens. There are some changes with beam aperture and/or current, but the biggest differences seem to be associated with a change of source type and hence, possibly, with a change in the source/extractor configuration or in the alloy and the emission process. The wing amplitudes are appreciably lower than many ...
1995-11-01
Focused ion-beam line profiles: A study of some factors affecting beam broadening
International Nuclear Information System (INIS)
The current--density profile of a focused ion beam (FIB) has a central peak accompanied by broader ''wings'' that, while unimportant in lithographic applications, can lead to unwanted effects during an implantation operation. The origin of the wings, and hence the best way to minimize them, is not clear and needs further study. We have measured the line profiles of several of the ions available in our FIB machine as a function of a number of variables, under ultrahigh vacuum (UHV) conditions. No effects are observed from changes in emission current or deliberate defocusing of the objective lens. There are some changes with beam aperture and/or current, but the biggest differences seem to be associated with a change of source type and hence, possibly, with a change in the source/extractor configuration or in the alloy and the emission process. The wing amplitudes are appreciably lower than many ...
Production of negative ions by electron impact. Final report 1 May 81-31 Oct 82
Proposed future space-based beam weapons systems will most probably require an intense neutral particle beam for effective operation across geomagnetic field lines. Such neutral beams can most efficiently be obtained by stripping excess electrons from negative ion beams. The objective of this work is to study the process of dissociative attachment of electrons. Specifically, to measure the cross sections for polar dissociation and dissociative attachment for production of H(-). It is suspected that these dissociative attachment cross sections for the production of H(-) from alkali hydrides are large. The insight gained from this study will be extremely helpful in the fabrication of high current density H(-) beam sources for use in the production of intense neutral hydrogen beams. A selection of alkali hydride molecules will be investigated ...
1982-10-01
Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams
International Nuclear Information System (INIS)
Topographic and optical patterns have been fabricated in a-SiC films with a focused high-energy (1 MeV) H"+ and He"+ ion beam and examined with near-field techniques. The patterns have been characterized with atomic force microscopy and scanning near-field optical microscopy to reveal local topography and optical absorption changes as a result of the focused high-energy ion beam induced modification. Apart of a considerable thickness change (thinning tendency), which has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. Although the size of the fabricated optical patterns is in the micron-scale, the present development of the technique allows in principle writing optical patterns up to the nanoscale (several tens of nanometers). The observed values of the optical contrast modulation are sufficient to ...
2011-07-01
Energy Technology Data Exchange (ETDEWEB)
The goal of this project was to develop a new technology for preparing samples for transmission electron microscopy (TEM) on the basis of ion fine beam processing. For this purpose processes of ion-beam-assisted removal (sputtering), separation, sample handling and ion-beam-assisted chemical etching as well of system-inherent components were examined. As an alternative to a Ga-source a liquid-metal ion source based on a AuGeSi alloy was developed, characterised and used in the FIB 4400. [German] Aufgabe des Projektes war die Entwicklung einer neuen Technologie zur Probenpraeparation fuer die Transmissions-Elektronenmikroskopie (TEM) auf der Basis der Ionenfeinstrahlbearbeitung. Dazu wurden Prozesse der ionenstrahlgestuetzten Abtragung (Sputtern), der Abscheidung, des Probenhandling, des ionenstrahlgestuetzten chemischen Aetzens sowie systemeigener Komponenten untersucht. Als ...
2001-08-01
The effect of ion implantation of Ar on the aqueous corrosion resistance of Zr-4 alloy
International Nuclear Information System (INIS)
The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).
Simulation study on retention and reflection from tungsten carbide under high fluence of helium ions
Energy Technology Data Exchange (ETDEWEB)
We have studied, by a Monte Carlo simulation code ACAT-DIFFUSE, the fluence-dependence of the amount of retained helium atoms in tungsten carbide at room temperature under helium ion bombardment. The retention behavior may be understood qualitatively in terms of irradiation-dependent diffusion coefficient assumed and range. The emission processes from tungsten carbide under helium ion irradiation derived were compared with each other. We have discussed the retention curves for incident energy of 5 keV at incident angles of 0deg and 80deg and of 500 eV at 0deg. The energy spectra of helium atoms reflected from tungsten carbide for incident energy of 500 eV at 0deg and 80deg were compared with those from graphite and tungsten. (author)
2000-08-01
RHEED, AES and XPS studies of the passive films formed on ion implanted stainless steel
International Nuclear Information System (INIS)
P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
2005-05-26
RHEED, AES and XPS studies of the passive films formed on ion implanted stainless steel
Energy Technology Data Exchange (ETDEWEB)
P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
1981-12-01
Photosensitivity and imaging characteristics of ion-implanted PLZT ceramics
International Nuclear Information System (INIS)
We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.
1985-08-12
Atomic processes in high temperature plasmas
International Nuclear Information System (INIS)
Much theoretical and experimental efforts have been expended in recent years to study those atomic processes which are specially relevant to understanding high temperature laboratory plasmas. For magnetically confined fusion plasmas, the temperature range of interest spans from the hundreds of eV at plasma edges to 10 keV at the center of the plasma, where most of the impurity ions are nearly fully ionized. These highly stripped ions interact strongly with electrons in the plasma, leading to further excitation and ionization of the ions, as well as electron capture. Radiations are emitted during these processes, which easily escape to plasma container walls, thus cooling the plasma. One of the dominant modes of radiation emission has been identified with dielectronic recombination. This paper reviews this work.
1990-01-01
Energy Technology Data Exchange (ETDEWEB)
Propagation of an intense charged particle beam pulse through a background plasma is a common problem in astrophysics and plasma applications. The plasma can effectively neutralize the charge and current of the beam pulse, and thus provides a convenient medium for beam transport. The application of a small solenoidal magnetic field can drastically change the self-magnetic and self- electric fields of the beam pulse, thus allowing effective control of the beam transport through the background plasma. An analytic model is developed to describe the self-magnetic field of a finite- length ion beam pulse propagating in a cold background plasma in a solenoidal magnetic field. The analytic studies show that the solenoidal magnetic field starts to infuence the self-electric and self-magnetic fields when ?ce > ?pe?b, where ?ce = e?/mec is the ...
2008-10-10
Beam direct converter with varying magnetic field
Energy Technology Data Exchange (ETDEWEB)
The concept of a direct energy recovery system that applies a varying magnetic field is proposed for a negative-ion-based neutral beam injection system (NNB) to heat a plasma and/or drive a plasma current in a fusion reactor. The output beam energy and power of such an NNB will be {approximately}1 MeV and {approximately}1- MW/beam-line, respectively, and nearly the same amounts of positive- and negative-ion beams remain unneutralized in an NNB by using a gas-neutralizing cell. Therefore, the output of a beam direct convertor in an NNB is a bipolar direct current (dc) electric power with close to {plus_minus} 1 MV and several amperes if a conventional electrostatic or magnetostatic field is applied for ion beam separation. However, such high-voltage dc power is difficult to handle at the point of the ...
1994-12-01
Energy Technology Data Exchange (ETDEWEB)
The purpose of this study is to evaluate the synergistic effect of helium and hydrogen on Fe-Cr ferritic model alloys, to provide basic understanding concerning development of fusion reactor components. Single, dual and triple ion-beams consisting of Fe{sup 3+}, He{sup +} and H{sup +} were used for irradiation, at temperatures 470-600 deg. C and dose to 50 dpa at 1 {mu}m. The dual beam irradiation with He enhanced cavity nucleation extensively to swelling of about 0.4%, whereas the dual beam irradiation with H did not significantly affect the microstructure. In the case of triple ion irradiation, the synergistic effect of He and H was confirmed clearly; relative large void formation and enhanced swelling to almost 5%. The synergistic effect suggests that the role of H is important for void growth and dislocation bias.
2004-08-01
Micromachining of CVD diamond films using a focused ion beam
Energy Technology Data Exchange (ETDEWEB)
Grooving CVD diamond films using a focused ion beam (FIB) to quarry micro parts is described. The substrate-side surface of a polycrystalline diamond film which is prepared by means of microwave plasma CVD, is able to be grooved by a focused Ga ion beam scanned straight repeatedly. The groove has cross section whose shape is like an inverted Gaussian distribution curve. And the surface roughness of the films before grooved influences that of grooves. Under the same irradiation conditions, deeper, narrower, in short, high aspect ratio grooves are obtained on B-doped semiconducting microwave plasma CVD diamond films. Coating electrical conductive material is also effective method to obtain high aspect ratio grooves. It is supposed that these results are due to the degree of electrification on the surface and that FIB irradiation is a suitable method for micromachining semiconducting diamond films.
1995-12-31
Micro-patterning of chemical functionality of anthracene-bis-resorcinol film using focused ion beam
International Nuclear Information System (INIS)
Anthracene-bis-resorcinol is an interesting molecule as it forms a hydrogen-bonded network when guest molecules with weak polarity are included. Focused ion beam (FIB) was irradiated on a part of its amorphous film with low dose, and the film was exposed to the vapor of guest molecules. From fluorescence and AFM analyses of this film, it was found that no inclusion compound was formed in FIB irradiated area, i.e. FIB irradiation suppresses the ability to form the inclusion compounds. By utilizing this phenomenon, we succeeded in a microfabrication of relief structures consisting of inclusion compounds which has different fluorescence from its surrounding. Morphology, fluorescence, and IR absorption analyses indicated that hydroxyl or resorcin groups are damaged by ion beams, and consequently a formation of hydrogen-bonded networks, which play a role of a lattice caging guest molecules, becomes ...
2005-12-15
Focused ion beam implantation induced site-selective growth of InAs quantum dots
International Nuclear Information System (INIS)
The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.
2007-09-17
International Nuclear Information System (INIS)
The opportunity of use self-maintained plasma-beam discharge in an extended pulsing plasma diode of low pressure for making powerful sources of the soft X-rays is investigated. Conditions of formation of the self-maintained plasma-beam discharge are determined. The mode of making of dense high-temperature plasma on the basis of stannum ions in the discharge is shown. The stannum ions are used as a working element of a radiation sources at pulsing power of electron beam P?10...100 MW. Results of the examination on formation of the dense (np?1016 cm3), small sizes (le?100 eV in conditions of working material evaporation from the anode are given. The total contribution of energy to the discharge has made W < 20 J.
2006-01-01
International Nuclear Information System (INIS)
Electron and ion beam dynamics of the PF-1000 facility were investigated for the first time at its upper energy limit (?1 MJ) in relation to neutron emission, the pinch's plasma ('target') characteristics and some other parameters with the help of a number of diagnostics with ns temporal resolution. Special attention was paid to the temporal and the spatial cross correlations of different phenomena. Results of these experiments are in favour of a neutron emission model based on ion beam-plasma interaction with three important features: (1) the plasma target is hot and confined during a few 'inertial confinement times'; (2) the ions of the main part of the beam are magnetized and entrapped around the pinch plasma target for a period longer than the characteristic time of the plasma inductive storage system and (3) ion-ion collisions (both ...
2007-06-21
The interaction of fast N"+_2 ions with a Ni(111) surface
International Nuclear Information System (INIS)
In the context of sputtering experiments, studying the back-scattering of fast ion beams is a useful way to study inelastic ion-surface interactions, since then the trajectories and energies of the particles are well defined. This same argument holds for the scattering of fast molecular ions. We give a short account of our experiment where N"+_2 was scattered from a Ni(111) surface. The measured energy distributions of scattered N atoms are discussed with regard to vibrational and rotational energy transfer during scattering. (G.Q.).
1986-02-01
Study of physical properties of protons and "1"2C ions in medical application
International Nuclear Information System (INIS)
Depending on their unique physical properties, proton and heavy ions have taken an irreplaceable role in modern means of tumor treatment. One-step process and two-step process physical models were employed to explain the mechanism of ion energy loss. The transport process of proton and "1"2C in water was simulated by Geant4 toolkit to study the physical properties of ion beam. The calculation results were discussed, which showed the advantages and disadvantages of proton and "1"2C in the medical application. (authors)
2009-06-01
Laser photoelectron spectroscopy of ions. Progress report, August 1, 1982-July 31, 1983
Energy Technology Data Exchange (ETDEWEB)
We have undertaken a program which measures the photoelectron spectra of negative-ion beams. This experiment has afforded us direct information about these ions and the corresponding neutral radicals. Several ions and numerous radicals are believed to be crucial intermediates in combustion processes and flame chemistry. We have fabricated a spectrometer which directly measures electron affinities (EA). Knowledge of the EA and gas-phase acidity of a radical has enabled us to deduce several radical heats of formation and bond strengths.
1983-03-01
IFA-2 collective ion accelerator experiments
Energy Technology Data Exchange (ETDEWEB)
Ion acceleration has now been demonstrated with the IFA-2 collective ion accelerator system. The IFA-2 system is described, photoionization experiments are summarized, and ion results are presented. Using a 1 MeV electron beam and a 30 cm acceleration length, IFA-2 has produced 5 MeV H/sup +/, 10 MeV D/sup +/, and 20 MeV He/sup + +/. This means that accelerating fields of 33 MV/m over 30 cm have been achieved with a controlled collective accelerator for the first time.
1985-10-01
Accelerators for proton and heavy ion radiotherapy
Energy Technology Data Exchange (ETDEWEB)
The construction of Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences was completed in December 1993. HIMAC consists of an injector linac, two synchrotron rings, a high energy beam transport system and a beam irradiation system. Its accelerator parameters are based on the medical requirement, and helium, carbon, neon, silicon and argon were selected as the accelerated ion species. It has 3 therapy rooms (A{approx}C). Room A has a vertical irradiation system, Room C horizontal and Room B both vertical and horizontal. Two rings can supply beams independently to the vertical and horizontal irradiation systems. Clinical trial started on June 21 1994, after several basic biological and physics experiments lasting about 2 months. Cancer is the top cause of death in Japan since 1981, and people expect good treatment results at HIMAC. Proton ...
1995-03-01
VLF wave stimulation by pulsed electron beams injected from the space shuttle
International Nuclear Information System (INIS)
Among the investigations conducted on the space shuttle flight STS 3 March 1982 was an experiment in which a 1-keV, 100-mA electron gun was pulsed at 3.25 and 4.87 kHz. The resultant waves were measured with a broadband plasma wave receiver. At the time of flight the experimental setup was unique in that the electron beam was square wave modulated and that the shuttle offered relatively long times for in situ measurements of the ionospheric plasma response to the VLF pulsing sequences. In addition to electromagnetic response at the pulsing frequencies the waves exhibited various spectral harmonics as well as the unexpected occurrence of satellite lines around those harmonics. Both phenomena occurred with a variety of different characteristics for different pulsing sequences.
International Nuclear Information System (INIS)
In various situations, measurements in prompt gamma neutron activation analysis (PGNAA) are performed to determine the amount of an elemental impurity relative to that of a major constituent of the matrix. An example of this is the measurement of hydrogen concentration in a metallic matrix. In all such cases, a major contributor to the uncertainty in the measurement is the uncertainty in the ratio of the high-purity germanium (HPGe) detector full-energy peak efficiency for the gamma-ray lines of interest (i.e., impurity and matrix gammas). Usually, the ratio is derived from the relative peak efficiency curve, which is determined using isotopic standards that emit multiple gamma ray lines (e.g., "1"5"2Eu) in the energy range <3000 keV, or using prompt gamma radionuclides (e.g., "1"4N, "3"5Cl) in the energy range >3000 keV. In either case, the uncertainty in the ratio of the peak efficiency values derived from such measurements will be on ...
2001-06-17
SSRM characterisation of FIB induced damage in silicon
International Nuclear Information System (INIS)
Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.
2008-03-01
Microstructure of c-BN films deposited by IBAD: IR and HREM analyses
International Nuclear Information System (INIS)
The in-depth distribution of phases in c-BN films deposited by Ion Beam Assisted Deposition (IBAD) at two different ion energy values (300 and 600 eV) was investigated using the quantitative IR transmission measurements and the HREM technique. Whatever the value of the studied ion energies, the characteristic layered morphology of c-BN film is observed including the interfacial sp"2 zone between the substrate and the c-BN volume. In the case of 600 eV ion energy, this interfacial zone is less well-defined in comparison with 300 eV ion energy and the corresponding thickness is more important. Furthermore, the h-BN phase is more diluted within the c-BN film volume showing that the purest phase concentration of c-BN is found for the lowest ion energy, i.e., 300 eV.
1997-04-04
Ion-induced phase formation in metal-silicon systems. [Xenon ion implantation effects
Energy Technology Data Exchange (ETDEWEB)
By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.
1985-01-11
Energy Technology Data Exchange (ETDEWEB)
The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ...
2002-09-01
Energy Technology Data Exchange (ETDEWEB)
We present two applications of CR-39 to estimate biological effects of heavy ion irradiation. The accurate measurement of fluence of ions using CR-39 is indispensable to calculate the action cross sections for biological effects. Ions with 6 MeV/n at the Medium Energy Beam Course, HIMAC (NIRS) were extracted to the air, and degraded with the air. DNA and living cells were irradiated by ions with various specific energies at several air columns along with the Bragg curve. DNA strand breaks and cell killing were measured and the results were converted to the action cross sections using the fluence measured with CR-39 at the irradiation positions. Another example of the application of CR-39 is to identify whether the ions with a specific energy pass through the cell or stop within the cell. (author)
2001-10-01
Electron and ion beam effects in amorphous SiO_2 and Si_3N_4 films for electronic devices
International Nuclear Information System (INIS)
The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO_2, Si_3N_4 and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si_3N_4, but SiO_2 appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO_2 and Si_3N_4 films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films. (author).
1982-01-01
Energy Technology Data Exchange (ETDEWEB)
The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO/sub 2/, Si/sub 3/N/sub 4/ and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si/sub 3/N/sub 4/, but SiO/sub 2/ appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO/sub 2/ and Si/sub 3/N/sub 4/ films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films.
1982-10-01
International Nuclear Information System (INIS)
High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main ...
2005-02-15
Corrosion behaviour of molybdenum-implanted stainless steel
Energy Technology Data Exchange (ETDEWEB)
A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...
1990-01-01
Corrosion behaviour of molybdenum-implanted stainless steel
International Nuclear Information System (INIS)
A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...
1989-09-01
International Nuclear Information System (INIS)
Thinning specimens to electron transparency for electron microscopy analysis can be done by conventional (2-4 kV) argon ion milling or focused ion beam (FIB) lift-out techniques. Both these methods tend to leave 'mottling' visible on thin specimen areas, and this is believed to be surface damage caused by ion implantation and amorphisation. A low energy (250-500 V) Argon ion polish has been shown to greatly improve specimen quality for crystalline silicon samples. Here we investigate the preparation of technologically important materials for nanoanalysis using conventional and lift-out methods followed by a low energy polish in a GentleMill"T"M low energy ion mill. We use a low energy, low angle (6-8 deg.) ion beam to remove the surface damage from previous processing steps. We assess this method for the preparation of ...
2006-02-22
Energy Technology Data Exchange (ETDEWEB)
The field of ion acceleration to higher energies has grown rapidly in the last years. Many new facilities as well as substantial upgrades of existing facilities have extended the mass and energy range of available beams. Perhaps more significant for the long-term development of the field has been the expansion in the applications of these beams, and the building of facilities dedicated to areas outside of nuclear physics. This review will cover many of these new developments. Emphasis will be placed on accelerators with final energies above 50 MeV/amu. Facilities such as superconducting cyclotrons and storage rings are adequately covered in other review papers, and so will not be covered here.
1990-06-01
International Nuclear Information System (INIS)
The read/write characteristics for perpendicular magnetic recording media of focused-ion-beam (FIB)-etched recording heads were investigated. It was found that the trailing edge of an FIB-etched head produces a higher gradient in the magnetic field perpendicular to the medium than a head which has not been etched. The signal-to-noise ratio of the medium increased with the FIB-etched write gap. A high-Bs and thin pole increased the magnetic field's gradient in the perpendicular direction, resulting in excellent read/write characteristics.
2001-10-01
Neon-20 depth-dose relations in water
Energy Technology Data Exchange (ETDEWEB)
The dose from heavy ion beams has been calculated using a one-dimensional transport theory and evaluated for 670 MeV/amu /sup 20/Ne beams in water. The result is presented so as to be applicable to arbitrary ions for which the necessary interaction data are known. The present evaluation is based on the Silberberg-Tsao fragmentation parameters augmented with light fragment production from intranuclear cascades, recently calculated nuclear absorption cross sections, and evaluated stopping power data. Comparison with recent experimental data obtained at the Lawrence Berkeley Laboratory reveals the need for more accurate fragmentation data.
1984-05-01
Ion beam analysis of high temperature superconducting samples
Energy Technology Data Exchange (ETDEWEB)
Characterization of high temperature superconducting film and bulk samples has been carried out using 2 MeV [alpha]-particle Rutherford backscattering, 2.4 MeV proton elastic scattering, 2.4 MeV proton-induced x-ray emission, 9 MeV proton induced [gamma]-ray emission and 100 MeV iodine elastic recoil detection analysis techniques. The objective was to compare different ion beam based techniques for: (i) compositional analysis; and (ii) consistency of the results obtained for samples prepared using similar preparation methodology. (author).
1994-02-01
Imaging characterization of carbon nanotube tips modified using a focused ion beam
International Nuclear Information System (INIS)
A carbon nanotube (CNT) tip, which assembled on the sharp end of a Si tip by dielectrophoresis, was structurally modified using focused ion beam (FIB). We described the imaging characterization of the FIB-modified CNT tip in noncontact AFM mode in terms of wear, deep trench accessibility, and imaging resolution. Compared to a conventional Si tip, the FIB-modified CNT tip was superior, especially for prolonged scanning over 10 h. We conclude that modified CNT tips have the potential to obtain high-quality images of nanoscale structures.
2007-06-15
Formation of oriented nanocrystals in an amorphous alloy by focused-ion-beam irradiation
International Nuclear Information System (INIS)
Structural changes of a Ni-P amorphous alloy under focused-ion-beam (FIB) irradiation have been examined using transmission electron microscopy. On the irradiated plane, the formation of crystallographically orientated nanosized crystals (NCs), with the particle size of approximately 10 nm, was observed. A series of electron diffraction analyses have revealed that NCs have a face-centered-cubic (fcc) structure and the following orientation relationships between the NCs and the FIB direction were found. These are, irradiated plane//(111)_f_c_c and FIB direction//_f_c_c.
2002-12-09
Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces
International Nuclear Information System (INIS)
We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).
2009-10-12
International Nuclear Information System (INIS)
Nanoindentation was performed on a Mo-alloy single crystal to investigate effects of focused ion beam (FIB) milling on mechanical behavior. On a non-FIB-milled surface, pop-ins were observed on all load-displacement curves corresponding to a transition from elastic to plastic deformation. Similar pop-ins were not detected on surfaces subjected to FIB milling. This difference indicates that FIB milling introduces damage that obviates the need for dislocation nucleation during subsequent deformation. A second effect of FIB milling is that it increased the surface hardness. Together, these effects could be the source of the size effects reported in the literature on micropillar tests.
2007-09-10
Auger analysis of etch residues in submicrometer via holes using focused ion beam sample preparation
Energy Technology Data Exchange (ETDEWEB)
The composition and thickness of etch residues on the base of submicrometer via holes cannot be surmized from data on larger features. Auger sputter depth profiles were used to compare etch residues in 0.55 {mu}m via holes produced by different etch processes and remaining after different cleans. These residues varied significantly in composition and thickness with the processing history of the sample and from those on larger features. A focused ion beam (FIB) sample preparation was developed to expose the bases of via holes and to help reduce sample charging. (author).
1995-02-01
International Nuclear Information System (INIS)
Absolute, cascade-free excitation cross sections in an ion have been measured for the resonance "2S#->#"2P transition in Zn"+ using electron-energy-loss and merged electron-ion beams methods. Measurements were carried out at electron energies of below threshold to 6 times threshold. Comparisons are made with 2-, 5-, and 15-state close-coupling and distorted-wave theories. There is good agreement between experiment and the 15-state close-coupling cross sections over the energy range of the calculations.
Study of penetration depth for V"+ with low energy implanted in peanut seeds
International Nuclear Information System (INIS)
The penetration depth and concentration distribution for vanadium ions with low energy implanted into the dry peanut seeds is determined by scanning electron microscope and X-ray energy dispersion spectrometer. The results show that the depth-concentration distribution is a Gaussian distribution with a long tail and the maximum penetration depth is about 13.6 #mu#m for V"+ with 200 keV in cotyledon of the peanut. The experimental result of the implanted V"+ range in the peanut seeds is compared with the calculating value of the TRIM95
2002-11-01
Solid-state ozone synthesis by energetic ions
International Nuclear Information System (INIS)
We have synthesized ozone by irradiating thin solid films of oxygen and oxygen-water mixtures with 100 keV protons, motivated by recent reports of condensed O_3 on icy satellites in the outer Solar system. We measured the depth of the Hartley absorption band in the ultraviolet by reflectance spectroscopy and used it to quantify the column density of ozone. We analyzed the results using a three-component (O, O_2 and O_3) model that successfully explains the fluence dependence of ozone production.
1999-08-02
Observation of a surface peak in low energy implant depth profiles in silicon
Energy Technology Data Exchange (ETDEWEB)
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
1984-03-01
TPX Neutral Beam Injection System design
International Nuclear Information System (INIS)
The existing Tokamak Fusion Test Reactor Neutral Beam system is proposed to be modified for long pulse operation on the Tokamak Physics Experiment (TPX). Day one of TPX will call for one TFTR beamline modified for 1000 second pulse lengths oriented co-directional to the plasma current. The system design will be capable of accommodating an additional co-directional and a single counter directional beamline. For the TPX conceptual design, every attempt was made to use existing Neutral Beam hardware, plant facilities, auxiliary systems, service infrastructure, and control systems. This paper describes the moderate modifications required to the power systems, the ion sources, and the beam impinged surfaces of the ion dumps, the calorimeters, the various beam scrapers, and the neutralizers. Also described are the minimal modifications required to the vacuum, ...
1993-10-11
Construction, testing of the 1 MW, 130-260 GHz Fusion-FEM
Energy Technology Data Exchange (ETDEWEB)
During the previous 9 months the major part of the Fusion-FEM has been constructed. The 2 MV Insulated Core Transformer, the electron gun, the accelerator, the focusing lenses and the undulator have been tested on-site. In the present - temporary - set-up, the electron beam line consists of a 12 A, 80 keV thermionic electron gun, a 2 MeV dc accelerator, beam transport optics, the undulator and a collector. The gun is mounted in the high voltage terminal, which is now at -2 MV, and the undulator and mm-wave system am at ground potential outside the SF{sub 6}-filled pressure tank. This so-called inverse set-up allows easy access to the larger part of the beam line, the undulator and the mm-wave system, which is important in the conditioning phase. The decelerator and depressed collector am not yet installed. The design of the electron beam line has been optimised using the GPS ...
1995-12-31
Energy Technology Data Exchange (ETDEWEB)
Properties of the multi-species electromagnetic Weibel and electrostatic two-stream instabilities are investigated for an intense ion beam propagating through background plasma. Assuming that the background plasma electrons provide complete charge and current neutralization, detailed linear stability properties are calculated within the framework of a macroscopic cold-fluid model for a wide range of system parameters.
2004-04-09
Swelling behavior of a simple ferritic alloy
International Nuclear Information System (INIS)
The swelling behavior which results from simulated fusion environment irradiation of Fe-10% Cr has been characterized with transmission electron microscopy. Specimens were bombarded at 850 K with: a ''triple-beam'' of He"+, D_2"+, and 4 MeV Fe"+"+ ions to 0.3, 1, 3, 10, 30, and 100 dpa (displacement per atom); a ''dual-beam'' of He"+ and 4 MeV Fe"+"+ ions to 30 and 100 dpa; and a ''single-beam'' of 4 MeV Fe"+"+ ions to 30 dpa. The helium and hydrogen injection rates were approx. =10 appm He/dpa and approx. =40 appm D/dpa. Cavities were observed for damage levels of 3 dpa and greater. The swelling was <0.1% for damage levels <30 dpa, but at 100 dpa, there was an increase in the swelling to 2.5% for the ''triple-beam'' irradiation and 1.2% for the ''dual-beam'' irradiation. The swelling rates between 30 and 100 dpa ...
Fabrication of metallic contacts to nanometre-sized materials using a focused ion beam (FIB)
Energy Technology Data Exchange (ETDEWEB)
Nanometre-sized materials, like nanowires, nanoparticles or nanobelts, are gaining huge interest as building blocks of modern electronic nanodevices. Their fabrication feasibility has been demonstrated in the last years, and different routes are already well established in order to synthesize these materials. However, the assessment of their electrical properties is still a challenging issue, due to the difficulty to perform a precise nanolithography process allowing the access to such small structures. The fabrication of metallic contacts with precision in the nanometre range is necessary, as well as achieving a flexible system that allows to contact individual structures. Such a system could be a dual-beam Focused Ion Beam instrument, which combines Scanning Electron Microscopy (SEM) and Focused Ion Beam (FIB) in one machine, able to assist deposition of materials with nanometre ...
2006-07-15
Fabrication of metallic contacts to nanometre-sized materials using a focused ion beam (FIB)
International Nuclear Information System (INIS)
Nanometre-sized materials, like nanowires, nanoparticles or nanobelts, are gaining huge interest as building blocks of modern electronic nanodevices. Their fabrication feasibility has been demonstrated in the last years, and different routes are already well established in order to synthesize these materials. However, the assessment of their electrical properties is still a challenging issue, due to the difficulty to perform a precise nanolithography process allowing the access to such small structures. The fabrication of metallic contacts with precision in the nanometre range is necessary, as well as achieving a flexible system that allows to contact individual structures. Such a system could be a dual-beam Focused Ion Beam instrument, which combines Scanning Electron Microscopy (SEM) and Focused Ion Beam (FIB) in one machine, able to assist deposition of materials with nanometre ...
2006-07-01
Alfven Eigenmode Stability with Beams in ITER-like Plasma
Energy Technology Data Exchange (ETDEWEB)
Toroidicity Alfven Eigenmodes (TAE) in ITER can be driven unstable by two groups of energetic particles, the 3.5 MeV {alpha}-particle fusion products and the tangentially injected 1MeV beam ions. Stability conditions are established using the perturbative NOVA/NOVA-K codes. A quasi-linear diffusion model is then used to assess the induced redistribution of energetic particles.
2004-07-16
A HELICAL MAGNET DESIGN FOR RHIC.
Energy Technology Data Exchange (ETDEWEB)
Helical dipole magnets are required in a project for the Relativistic Heavy Ion Collider (RHIC) to control and preserve the beam polarization in order to allow the collision of polarized proton beams. Specifications are for low current superconducting magnets with a 100 mm coil aperture and a 4 Tesla field in which the field rotates 360 degrees over a distance of 2.4 meters. A magnet meeting the requirements has been developed that uses a small diameter cable wound into helical grooves machined into a thick-walled aluminum cylinder.
1997-05-12
Decay of "1"0"1Mo and band structures of its daughter nuclide "1"0"1Tc in the projected shell model
International Nuclear Information System (INIS)
The decay of molybdenum-101 has been investigated using the three-parameter (#gamma#-#gamma#-t) coincidence system of HPGe-HPGe detectors. According to the off-line analysis, the decay scheme was modified. The positions of 221.80, 318.00, 377.90; 452.50, 515.42, 1011.05, and 1759.72 keV transitions have been arranged again, the transition positions of 104.70, 105.95, and 774.15 keV gamma rays have been assigned for the first time, the positions of 169.00, 590.91, 980.52, and 1431.68 keV transitions have been reconfirmed, and the 1508.01 keV gamma ray was observed simultaneously for the first time and its transition position has been assigned. The #beta#"- intensities and the values of log ft of most levels were calculated. Combining with the high-spin states observed by the in-beam #gamma#-ray spectroscopy of previous decay works, the structure of the excited ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
1995-10-09
International Nuclear Information System (INIS)
The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.
Resonant neutralization of He ions into excited states at Cu(110) and Ni(110) surfaces
Energy Technology Data Exchange (ETDEWEB)
He ions incident at grazing angles on Cu(110) and Ni(110) surfaces are neutralised into triplet and singlet states, of which the 3p, 3d and 4d upper states are accessible to optical spectroscopy. In the energy range from 500 eV to 15 keV no significant energy dependence of the relative intensities of singlet and triplet lines was observed for scattering on Cu(110). The intensities from Ni(110) are higher and the singlet to triplet intensity ratio of the 3d to 2p transition is about 6% smaller than that from Cu(110). The results can be explained well by assuming resonant charge capture into excited He and intermediate formation of negative He/sup -/ states.
1984-03-01
Resonant neutralization of He ions into excited states at Cu(110) and Ni(110) surfaces
International Nuclear Information System (INIS)
He ions incident at grazing angles on Cu(110) and Ni(110) surfaces are neutralised into triplet and singlet states, of which the 3p, 3d and 4d upper states are accessible to optical spectroscopy. In the energy range from 500 eV to 15 keV no significant energy dependence of the relative intensities of singlet and triplet lines was observed for scattering on Cu(110). The intensities from Ni(110) are higher and the singlet to triplet intensity ratio of the 3d to 2p transition is about 6% smaller than that from Cu(110). The results can be explained well by assuming resonant charge capture into excited He and intermediate formation of negative He"- states. (orig.).
1983-07-01
Boron transient enhanced diffusion in heavily phosphorus doped silicon
International Nuclear Information System (INIS)
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
1996-12-02
Atomic scale simulations of arsenic ion implantation and annealing in silicon
International Nuclear Information System (INIS)
We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.
2004-12-15
PROGRESS IN BEAM FOCUSING AND COMPRESSION FOR WARM-DENSE MATTER EXPERIMENTS
Energy Technology Data Exchange (ETDEWEB)
The Heavy-Ion Fusion Sciences Virtual National Laboratory is pursuing an approach to target heating experiments in the Warm Dense Matter regime, using spacecharge-dominated ion beams that are simultaneously longitudinally bunched and transversely focused. Longitudinal beam compression by large factors has beendemonstrated in the Neutralized Drift Compression Experiment (NDCX) with controlledramps and forced neutralization. Using an injected 30-mA K+ ion beam with initialkinetic energy 0.3 MeV, axial compression leading to ~;;50-fold current amplification andsimultaneous radial focusing to beam radii of a few mm have led to encouraging energy deposition approaching the intensities required for eV-range target heating experiments. We discuss the status of several improvements to our Neutralized Drift Compression Experiment and associated ...
2008-09-25
Energy Technology Data Exchange (ETDEWEB)
The radiation-induced microstructural changes have been studied by cross-sectional transmission electron microscopy for single-crystal {alpha}-Al{sub 2}O{sub 3} samples irradiated with triple ion beams (0.25 MeV H{sup +}, 0.6 MeV He{sup +} and 2.4 MeV O{sup 2+}; `Triple (A)`), (0.33 MeV H{sup +}, 0.45 MeV He{sup +} and 1.3 MeV O{sup +}; `Triple (B)`) and three consecutive single ion beams (0.3 MeV H{sup +} ion followed by 0.6 MeV He{sup +} and then 0.8 MeV O{sup +} ions) at 650 C to doses in the range 0.1-8.4 dpa at the damage peak. In the specimen irradiated with Triple (A), having the same average projected range to a total peak dose of 3.7 dpa, cavities with an average diameter of 13 nm were formed between 1.2 and 1.75 {mu}m in depth causing a swelling of 0.1% at the peak, which is larger than those of the specimens irradiated with other conditions. The ...
1996-10-01
Microstructural evolution of single crystalline Al_2O_3 irradiated with single and triple ion beams
International Nuclear Information System (INIS)
The radiation-induced microstructural changes have been studied by cross-sectional transmission electron microscopy for single-crystal #alpha#-Al_2O_3 samples irradiated with triple ion beams (0.25 MeV H"+, 0.6 MeV He"+ and 2.4 MeV O"2"+; 'Triple (A)'), (0.33 MeV H"+, 0.45 MeV He"+ and 1.3 MeV O"+; 'Triple (B)') and three consecutive single ion beams (0.3 MeV H"+ ion followed by 0.6 MeV He"+ and then 0.8 MeV O"+ ions) at 650 C to doses in the range 0.1-8.4 dpa at the damage peak. In the specimen irradiated with Triple (A), having the same average projected range to a total peak dose of 3.7 dpa, cavities with an average diameter of 13 nm were formed between 1.2 and 1.75 #mu#m in depth causing a swelling of 0.1% at the peak, which is larger than those of the specimens irradiated with other conditions. The extent of the cavity-introduced region is some 40% smaller ...
Applications of negative ions produced at surfaces in plasma physics
Energy Technology Data Exchange (ETDEWEB)
The fundamental ionisation process of negative surface ionisation is described and two applications are discussed. One is in the so called surface-plasma sources which enable the production of intense negative ion beams. The second application is in the passive diagnosis of the charge exchange of neutrals emitted from hydrogen plasmas.
1982-01-01
A simple, high efficiency, negative surface ionization source
Energy Technology Data Exchange (ETDEWEB)
A spherical-geometry, self-extraction negative ion source has been designed and fabricated. The source utilizes direct surface ionization to form negative ion beams resulting from interactions between high electron affinity gaseous elemental or molecular materials and a negatively biased, spherical-sector LaB{sub 6} surface ionizer maintained at {similar to}1300 K. The design features of this source and principles upon which the source is based are discussed in this report.
1992-04-01
Time-of-flight secondary ion mass spectrometry of fatty acids in rat retina
Energy Technology Data Exchange (ETDEWEB)
The retina consists of many kinds of central nervous cells, and some cells contain fatty acids such as palmitic acid, stearic acid and oleic acid. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) has a possibility to detect kinds and quantity of materials in relation to the cell or tissue. We applied TOF-SIMS to detect the palmitic acid, stearic acid and oleic acid in the visual cell of the rat retina. We used 4- and 18-month-old normal Wistar Kyoto rats. After pentobarbital anesthesia, the eyes were enucleated, and immediately put into liquid nitrogen without any fixation and then cut into semithin sections (10 {mu}m) with a cryo-ultramicrotome, and laid it on a silicon wafer plate and air-dried. Ion images were detected with TOF-SIMS. Positive ion images were examined with a Ga{sup +} source at an acceleration voltage of 15 keV. The secondary ion acceleration voltage was ...
2003-01-15
Large-Scale Simulation of Beam Dynamics in High Intensity Ion Linacs Using Parallel Supercomputers
In this paper we present results of using parallel supercomputers to simulate beam dynamics in next-generation high intensity ion linacs. Our approach uses a three-dimensional space charge calculation with six types of boundary conditions. The simulations use a hybrid approach involving transfer maps to treat externally applied fields (including rf cavities) and parallel particle-in-cell techniques to treat the space-charge fields. The large-scale simulation results presented here represent a three order of magnitude improvement in simulation capability, in terms of problem size and speed of execution, compared with typical two-dimensional serial simulations. Specific examples will be presented, including simulation of the spallation neutron source (SNS) linac and the Low Energy Demonstrator Accelerator (LEDA) beam halo experiment.
2000-01-01
Focused-ion-beam directed self-assembly of Cu_2O islands on SrTiO_3(100)
International Nuclear Information System (INIS)
Nanoscale islands of Cu_2O have been synthesized on single-crystal SrTiO_3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (MBE). Island growth location has been controlled by using an ex situ Ga"+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex situ atomic force microscopy study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.
2004-06-21
Focused-Ion-Beam Directed Self-Assembly of Cu?O Islands on SrTiO3(100)
Energy Technology Data Exchange (ETDEWEB)
Nanoscale islands of Cu?O have been synthesized on single crystal SrTiO? (100) substrates using oxygen plasma assisted molecular beam epitaxy (MBE). Island growth location has been controlled by using an ex-situ Ga? focused ion beam (FIB) to modify the growth surface in discrete locations prior to island sythesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex-situ AFM study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.
2004-06-21
International Nuclear Information System (INIS)
The methods of superconducting device fabrication by lithography and multilevel processing usually require a number of processing steps with lithographic resolution and alignment adequate for the scale of the device be fabricated. As an alternative, the focused ion beam (FIB) microscope is increasingly being used directly to fabricate devices. A major advantage of using a FIB compared to other lithography methods is its flexibility and high resolution. It allows in-situ, milling (#propor to#5 nm at a beam current of 1 pA) to a variety of depths, and imaging (2 nm) of the sample. In this paper we describe our development of junction fabrication techniques using the FIB and their application in creating a range of potential sensor devices and quantum electronics applications. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
2005-03-01
Current drive and heating systems based on high-energy (1- to 3-MeV) negative ion beams
Energy Technology Data Exchange (ETDEWEB)
This paper describes a concept for a current drive system based on negative ions with beam energy > 1 MeV. Preliminary physics calculations show that the core current necessary for stability enhancement can best be achieved by beams with energy ranging from 1 to 4 MeV. Further study and experiments will better define the optimum energy. Work under way at Oak Ridge National Laboratory (ORNL) and at collaborating institutes in Canada and the Federal Republic of Germany is defining a system, its elements, a configuration and operational scenarios deemed appropriate for such devices as ITER and other future steady-state tokamaks, and the requisite research and development to provide such a system. 7 refs., 2 figs.
1988-01-01
International Nuclear Information System (INIS)
Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x1014 ions cm-2. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm-1 compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced 12C(d,p)13C reaction was used to measure the carbon impurity/dose in ion implanted ...
2008-11-03
Ion-induced phase formation in metal-silicon systems
International Nuclear Information System (INIS)
By using megaelectronvolt "4He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd_2Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni_2Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment. (Auth.).
Experiments on determination of damage effect ions "2"2Ne (172 MeV) on UO_2 monocrystals
International Nuclear Information System (INIS)
Shadow effect was used for investigating damage of uranium dioxide monocrystal. The dependence of shadow minimum parameters on fluence of "2"2Ne ions with 172 MeV energy was followed when detecting fission fragments. Ion dose responsible for sufficient microdamage of lattice structure, included into the classification of heavy ion damage effect on monocrystals was determined. The problem of radiation intensity effect on the character of occurred damages was studied. It was established that macroscopic sample failure, caused by generation of considerable mechanical stresses in monocrystal under beam effect could be observed along with microdamages of lattice structure at ion flux density >10"1"2 cm"-"2Xs"-"1.
Adhesion studies of Au films on GaAs using ion-assisted deposition techniques
International Nuclear Information System (INIS)
This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).
International Nuclear Information System (INIS)
The authors report on observations of plasma wave turbulence generated during electron beam injections, spacecraft potential variations, and neutral gas emissions of the CHARGE 2 sounding rocket experiment. The payload was flown in a mother/daughter configuration, with the two sub-payloads electrically connected by an insulated, conducting tether. While tethered, the two platforms were separated, drifting apart in a direction perpendicular to both the magnetic field and to the spacecraft velocity, reaching a maximum distance of 426 m at the end of the flight. The mother carried a high-voltage (HV) system (0-460 V), biasing the mother negative relative to the daughter. The operation of the HV bias system simulated the motional emf induced in larger orbiting space structures like the Tethered Satellite System 1 (TSS 1) space shuttle mission scheduled for the spring of 1992. In addition, the mother carried an electron beam accelerator (1 ...
ANALYSIS OF ACCELERATOR BASED NEUTRON SPECTRA FOR BNCT USING PROTON RECOIL SPECTROSCOPY
Energy Technology Data Exchange (ETDEWEB)
Boron Neutron Capture Therapy (BNCT) is a promising binary treatment modality for high-grade primary brain tumors (glioblastoma multiforme, GM) and other cancers. BNCT employs a boron-10 containing compound that preferentially accumulates in the cancer cells in the brain. Upon neutron capture by {sup 10}B energetic alpha particles and triton released at the absorption site kill the cancer cell. In order to gain penetration depth in the brain Fairchild proposed, for this purpose, the use of energetic epithermal neutrons at about 10 keV. Phase I/II clinical trials of BNCT for GM are underway at the Brookhaven Medical Research Reactor (BMRR) and at the MIT Reactor, using these nuclear reactors as the source for epithermal neutrons. In light of the limitations of new reactor installations, e.g. cost, safety and licensing, and limited capability for modulating the reactor based neutron beam energy spectra alternative neutron sources are being ...
1998-11-06
Doping of silicon carbide by ion implantation
Energy Technology Data Exchange (ETDEWEB)
A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ...
2001-07-01
Plasma neutralization models for intense ion beam transport in plasma
Energy Technology Data Exchange (ETDEWEB)
Plasma neutralization of an intense ion pulse is of interest for many applications, including plasma lenses, heavy ion fusion, cosmic ray propagation, etc. An analytical electron fluid model has been developed based on the assumption of long charge bunches (l{sub b} >> r{sub b}). Theoretical predictions are compared with the results of calculations utilizing a particle-in-cell (PIC) code. The cold electron fluid results agree well with the PIC simulations for ion beam propagation through a background plasma. The analytical predictions for the degree of ion beam charge and current neutralization also agree well with the results of the numerical simulations. The model predicts very good charge neutralization (>99%) during quasi-steady-state propagation, provided the beam pulse duration {tau}{sub b} is much longer than the ...
2003-05-01
Improved four-stage accel-decel production of low energy highly stripped heavy ions
Energy Technology Data Exchange (ETDEWEB)
The two model MP Tandem Van de Graaff accelerators at Brookhaven have been used in a four-stage accel-decel configuration to produce highly stripped low energy heavy ions. The performance in this mode of operation has now been substantially improved by modifications of the second accelerator. The inclined field acceleration tube electrodes at the exit of this accelerator were replaced by straight electrodes, the vacuum was improved and the maximum negative terminal potential was increased. Higher intensity beams of heavier highly stripped ions can now be produced at lower energies than before.
1983-04-01
Energy Technology Data Exchange (ETDEWEB)
The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si{sub 1-y}C{sub y} layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by ...
2003-05-01
International Nuclear Information System (INIS)
The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si_1_-_yC_y layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by the I's ...
2003-05-01
International Nuclear Information System (INIS)
Elise is a heavy ion induction linear accelerator that will demonstrate beam manipulations required in a driver for inertial fusion energy. With a line charge density similar to that of heavy ion drivers, Elise will accelerate a #>=# 1 gs beam pulse of K"+ ions from an initial energy of 2 MeV to a final energy #>=# 5 MeV. In the present design, the Elise electrostatic quadrupoles (ESQ) will have a 2.33 cm radius aperture operating at #+-#59 kV. The half-lattice periods range from 21 cm to 31 cm. The entire machine will be approximately 30 m long, half of that is the induction accelerator and the remaining half is the injector (including the Marx generator) and the matching section. Elise will be built in a way that allows future expansion into the full ILSE configuration, therefore it will have an array of four ESQ focusing channels capable of transporting up to a total of 3.2 ...
1995-09-06
International Nuclear Information System (INIS)
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)
2011-07-01
Status and progress in ion implantation technology for semiconductor device manufacturing
International Nuclear Information System (INIS)
Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)
1998-12-08
Observation of the microstructural changes in lithium titanate by multi-ion irradiation
Energy Technology Data Exchange (ETDEWEB)
The irradiation behavior of Li{sub 2}TiO{sub 3} under a fusion reactor environment was simulated by simultaneous irradiation of Li{sub 2}TiO{sub 3} by the triple ion beams and the respective single ion beams of O{sup 2+}, He{sup +} and H{sup +}. The microstructural changes in Li{sub 2}TiO{sub 3} caused by the irradiation were measured by Raman spectroscopy and FT-IR photoacoustic spectroscopy. The results suggest that the formation of TiO{sub 2} due to displacements by irradiation occurs, and the irradiation defects generated by irradiation trap hydrogen and increase the amount of hydroxyl near the surface. Such phenomena are believed to significantly affect the chemical form of the released tritium and the tritium inventory in the breeding materials of a fusion reactor.
2004-08-01
Observation of the microstructural changes in lithium titanate by multi-ion irradiation
International Nuclear Information System (INIS)
The irradiation behavior of Li_2TiO_3 under a fusion reactor environment was simulated by simultaneous irradiation of Li_2TiO_3 by the triple ion beams and the respective single ion beams of O"2"+, He"+ and H"+. The microstructural changes in Li_2TiO_3 caused by the irradiation were measured by Raman spectroscopy and FT-IR photoacoustic spectroscopy. The results suggest that the formation of TiO_2 due to displacements by irradiation occurs, and the irradiation defects generated by irradiation trap hydrogen and increase the amount of hydroxyl near the surface. Such phenomena are believed to significantly affect the chemical form of the released tritium and the tritium inventory in the breeding materials of a fusion reactor.
2004-08-01
Modeling of sputtering and redeposition in focused-ion-beam trench milling
Energy Technology Data Exchange (ETDEWEB)
Modeling is performed for focused-ion-beam (FIB) sputtering and redeposition on trench sidewalls in a steady state approximation. Calculations are carried out to demonstrate the sputtered surface profile under known parameters such as sputtering yield as a function of ion incident angle, the FIB current density profile, and the FIB scan speed. It is found that a steplike slope with a gradient angle of {theta}{sub 0} is formed at the FIB bombarding position. Furthermore, the redeposition flux on the sidewalls is calculated as a function of {theta}{sub 0} for the FIB trench milling assuming the cosine law for the angular distribution of the sputtered atom. The redeposition will be more accurately predictable and controllable when more information about these assumptions is obtained.
1991-11-01
Modeling of sputtering and redeposition in focused-ion-beam trench milling
International Nuclear Information System (INIS)
Modeling is performed for focused-ion-beam (FIB) sputtering and redeposition on trench sidewalls in a steady state approximation. Calculations are carried out to demonstrate the sputtered surface profile under known parameters such as sputtering yield as a function of ion incident angle, the FIB current density profile, and the FIB scan speed. It is found that a steplike slope with a gradient angle of #theta#_0 is formed at the FIB bombarding position. Furthermore, the redeposition flux on the sidewalls is calculated as a function of #theta#_0 for the FIB trench milling assuming the cosine law for the angular distribution of the sputtered atom. The redeposition will be more accurately predictable and controllable when more information about these assumptions is obtained.
Ion beam induced damage and element loss during a microanalysis of biological tissue
Energy Technology Data Exchange (ETDEWEB)
Specimen damage and element loss induced by 3 MeV proton and 2 MeV alpha particle bombardment of thin sections of freeze-dried kidney tissue and embedding medium have been studied. Yields of ions scattered from H and C, and characteristic X-rays were measured versus accumulated charge, for curent densities in the range from 8x10{sup -15} to 1.1x10{sup -11} A/{mu}m{sup 2}. Structural damage, dissolouration and loss of S, Cl, C and H have been observed. Implications of this study for ion beam microanalysis of biological tissues are discussed with particular reference to the results for H loss. (orig.).
1991-03-01
International Nuclear Information System (INIS)
Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.
Energy Technology Data Exchange (ETDEWEB)
Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.
1990-12-15
Energetic ion beams in semiconductor processing: Summary of a DOE panel study
Energy Technology Data Exchange (ETDEWEB)
The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.
1995-12-31
Effect of Gallium Focused Ion Beam Milling on Preparation of Aluminum Thin Foils
Energy Technology Data Exchange (ETDEWEB)
Focus Ion Beam (FIB) milling has greatly extended the utility of atom probe and TEM because it enables sample preparation with a level of dimensional control never before possible. Using FIB it is possible to extract the samples from desired and very specific locations. The artifacts associated with this sample preparation method must also be fully understood. In this work issues specifically relevant to the FIB milling of aluminum alloys are presented. After using the FIB as a sample preparation technique it is evident that gallium will concentrate in three areas of the sample: on the surface, on grain boundaries and at interphase boundaries. This work also shows that low energy Ar ion nanomilling is potentially quite effective for removing gallium implantation layers and gallium from the internal surfaces of aluminum thin foils.
2010-03-01
2007 2008 ACADEMIC TRAINING PROGRAMME
LECTURE SERIES 14, 15, 17 January 2008 11:00 to 12:00 - Council Chamber, bldg. 503-1-001 Applications of accelerators to tumour therapy U. AMALDI, TERA Foundation & University of Milano Bicocca The first lecture is devoted to an historical review of the developments of the teletherapy techniques which make use of hadron beams and are collectively called "hadrontherapy". The main emphasis is on the use of protons and light ions, but also neutrons, pions and antiprotons are considered. The second lecture reviews the rationale behind the use of carbon ions in the treatment of radioresistant tumours and the results obtained both with proton and carbon ion beams on the 60 000 patients treated worldwide. The numbers of patients who would profit from hadrontherapy are presented together with the current landscape of running and planned hospital based centres. The main technical ...
2007-01-01
British Library Electronic Table of Contents (United Kingdom)
The L shell fluorescence cross-sections of the elements in range 45Z50 have been determined at 8keV using Synchrotron radiation. The individual L X-ray photons, Ll, La, LbI, LbII, LgI and LgII produced in the target were measured with high resolution Si(Li) detector. The experimental set-up provided a low background by using linearly polarized monoenergetic photon beam, improving the signal-to-noise ratio. The experimental cross-sections obtained in this work were compared with available experimental data from Scofield [1,2] Krause [3,4] and Scofield and Puri et al. [5,6]. These experimental values closely agree with the theoretical values calculated using Scofield and Krause data, except for the case of Lg, where values measured of this work are slighter higher.
2011-01-01
International Nuclear Information System (INIS)
These experiments were performed on the Isocele separator, on-line with the Orsay synchrocyclotron; thulium isotopes were produced by bombarding natural erbium targets with 150nA beam of 157MeV protons. Two Ge(Li) detectors, with resolution of 2.3 and 2.5keV at 1332keV used for #gamma#-ray measurements; conversion electron spectra were measured using a Si(Li) detector. #gamma# spectra, #gamma#-#gamma# coincidence and conversion electron measurements were sufficient to build the flow energy level schemes of the transitional "1"5"8Er and "1"5"6Er nuclei. On both nuclei several quasi rotational bands have been identified. These results are compared with other even erbium isotopes and with the neighboring N=88 and 90 isotones. Comparisons with predictions issued from some classical models are also performed: "1"5"8Er appears as a deformed nucleus very similar to "1"6"0Er and "1"6"2Er; on the other hand "1"5"6Er seems to be a ...
1976-01-01
British Library Electronic Table of Contents (United Kingdom)
The alloying of steel surface with aluminum (Al) using Microsecond-pulsed Intense Electron Beams (MIEB-Al) was developed and optimized in order to be used for improving the corrosion resistance of the 316, 1.4970 and T91 steels, exposed to liquid Pb and Pb-Bi-eutectic. The procedure consists in two steps: (i) coating the steel surface with Al or an Al-containing alloy layer and (ii) melting the coating layer and the steel surface layer using intense pulsed electron beam. In order to cover the steel surface with an homogeneous and crack-free Al-alloyed layer, the following experimental conditions are required: Al coating thickness range 5-10mm, electron kinetic energy 120keV; pulse duration 30ms; energy density 40-45J/cm2; number of pulses 2-3. Using the mentioned procedure, the corrosion r...
2011-01-01
Performance testing of selected types of electronic personal dosimeters used in Sudan
International Nuclear Information System (INIS)
Measurements were carried out for calibration and performance testing of a set of 10 electronic personal dosimeters (EPDs) at the Secondary Standard Dosimetry Laboratory of Sudan. Calibrations were carried out at three X-ray beam qualities described in ISO standard 4037 in addition to 137Cs and 60Co gamma ray beams. The experimental was performed with EPDs mounted on ICRU Slab phantom. X-ray and ?-ray beams were characterized in terms of air kerma free-in-air which were converted to the known delivered personal dose equivalent, Hp(10) using appropriate the air kerma to personal dose equivalent conversion coefficients. Dosimeters tested showed excellent energy and angular response and relative error of indication within the recommended limit for photon energies from 65 keV to 1.25 MeV. The study showed encouraging results for using electronic dosimeters in personal dosimetry.
2010-12-01
Electron-beam-plasma ion source as source of negative fluorine
Energy Technology Data Exchange (ETDEWEB)
Radioactive ion beams (RIBs) of short-lived isotopes of fluorine are in demand for investigating astrophysical phenomena related to the hot CNO cycle and rp processes responsible for stellar nucleosynthesis. Since negative ion beams are required for injection into tandem electrostatic accelerators, such as the 25 MV tandem accelerator used for post acceleration of RIBs for the Holifield Radioactive Ion Beam Facility (HRIBF) research program at the Oak Ridge National Laboratory (ORNL), efficient, direct-formation F{sup -} ion sources are highly desirable for RIB applications involving this type of post-accelerator. We have conceived and evaluated a direct extraction F{sup -} source for potential RIB applications which is predicated on the reverse polarity operation of a positive electron-beam-plasma ...
1997-11-01
Energy Technology Data Exchange (ETDEWEB)
A working visit was made to the National Laboratory for High Energy Physics, Tsukuba, Japan, during the time periods May 16, 1988--June 15, 1988 for the purposes of further evaluation of the high intensity plasma sputter negative ion source and to test the response of the University of Tsukuba 13-MV tandem accelerator to mA intensity level pulsed mode heavy negative ion beams. During the visit, the traveler worked in collaboration with Japanese scientists in installing and testing of the source on the University of Tsukuba tandem electrostatic accelerator injector. During the course of preliminary testing of the ion source and prior to actual injection into the accelerator, sparking began in one or more tube sections, which ultimately led to the decision to replace the damaged tube sections. This problem led to postponement of the scheduled tandem accelerator tests. The traveler attended the Seventh ...
1988-07-06
Positioning of self-assembled InAs quantum dots by focused ion beam implantation
International Nuclear Information System (INIS)
Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is ...
2006-07-01
Energy Technology Data Exchange (ETDEWEB)
A versatile, high brightness, volume type, low power RF source, capable of producing positive ion beams with intensities as high as 1 mA from gaseous feed materials and microamperes of negative ion beams has been characterized. The source can also be operated as a plasma sputter negative ion source to generate up to 1 mA of a selected species. The performance of the source in the positive and negative volume modes of operation can be greatly enhanced by addition of a removable, water cooled filament assembly in place of the negative sputter probe. For examine, the material utilization efficiencies of gaseous feed species can be more than doubled, total current intensities increased up to 40%, molecular dissociation fractions increased by 20% and minimum operating pressures reduced by a factor of four when operated in the volume mode. These added electrons also favorably effect, as a ...
1995-07-01
Measurement of the Electron Affinities of Indium and Thallium
Energy Technology Data Exchange (ETDEWEB)
The electron affinities of indium and thallium were measured in separate experiments using the laser-photodetachment electron spectroscopy technique. The measurements were performed at the University of Nevada, Reno. Negative ion beams of both indium and thallium were extracted from a cesium-sputter negative ion source, and mass analyzed using a 90{sup o} bending magnet. The negative ion beam of interest was then crossed at 90{sup o} with a photon beam from a cw 25-Watt Ar{sup +} laser. The resulting photoelectrons were energy analyzed with a 160{sup o} spherical-sector spectrometer. The electron affinity of In({sup 2}P{sub 1/2}) was determined to be 0.404 {+-} 0.009 eV and the electron affinity of thallium was determined to be 0.377 {+-} 0.013 eV. The fine-structure splittings in the ground states of the negative ions were also determined. ...
1999-03-20
Effects of Multi-ion Irradiation on Microstructural Changes in Lithium Titanate
Energy Technology Data Exchange (ETDEWEB)
Full text of publication follows: Li{sub 2}TiO{sub 3} is regarded as one of the most suitable candidates for the solid tritium breeder material of D-T fusion reactors. It is known that, in an operating fusion reactor, the radiation damage in Li{sub 2}TiO{sub 3} will be caused by fast neutrons, energetic tritons and helium ions generated in {sup 6}Li(n,{alpha}){sup 3}H reaction. The irradiation damage caused by such radiation may result in the microstructural changes, and the changes may affect the characteristics of Li{sub 2}TiO{sub 3} such as tritium release behavior. Thus the study of irradiation defects and microstructural changes caused by irradiation in Li{sub 2}TiO{sub 3} is essential to evaluate its irradiation performance. Simulation of the fusion reactor environment and hence the study of a synergistic effect of atomic displacement damage in Li{sub 2}TiO{sub 3} are approached by a simultaneous irradiation with 'triple' ...
2007-07-01
Energy Technology Data Exchange (ETDEWEB)
This thesis presents the study of the slowing down process of fast heavy ions inside matter. In the framework of this research, the influence of the target density on the stopping process is investigated. Experiments on the interaction of {sup 48}Ca{sup 6+}-{sup 48}Ca{sup 10+} and {sup 26}Mg{sup 5+} ion beams with initial energies of 11.4 MeV/u and 5.9 MeV/u with solid and gaseous targets have been carried out. A novel diagnostic method, X-ray spectroscopy of K-shell projectile radiation, is used to determine the ion charge state in relation to its velocity during the penetration of fast heavy ions inside the stopping material. A spatially resolved analysis of the projectile and target radiation in solids is achieved for the first time. The application of low-density silica aerogels as stopping media provided a stretching of the ion stopping length by 20 - 100 ...
2007-01-15
Impurity and clustering effects on defect evolution in ion-implanted Si
Energy Technology Data Exchange (ETDEWEB)
A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess ...
1998-10-01
Microstructures for high-energy x-ray and particle-imaging applications
Energy Technology Data Exchange (ETDEWEB)
Coded imaging techniques using thick, micro-Fresnel zone plates as coded apertures have been used to image x-ray emissions (2-20 keV) and 3.5 MeV Alpha particle emissions from laser driven micro-implosions. Image resolution in these experiments was 3-8 ..mu..m. Extension of this coded imaging capability to higher energy x-rays (approx. 100 keV) and more penetrating charged particles (e.g. approx. 15 MeV protons) requires the fabrication of very thick (50-200 ..mu..m), high aspect ratio (10:1), gold Fresnel zone plates with narrow linewidths (5-25 ..mu..m) for use as coded aperatures. A reactive ion etch technique in oxygen has been used to produce thick zone plate patterns in polymer films. The polymer patterns serve as electroplating molds for the subsequent fabrication of the free-standing gold zone plate structures.
1981-05-01
Microstructures for high-energy x-ray and particle imaging applications
Energy Technology Data Exchange (ETDEWEB)
Coded imaging techniques using thick, micro-Fresnel zone plates as coded apertures have been used to image x-ray emission (2--20 keV) and 3.5 MeV Alpha particle emissions from laser driven micro-implosions. Image resolution in these experiments was 3--8 ..mu..m. Extension of this coded imaging capability to higher energy x rays (approx.100 KeV) and more penetrating charged particles (e.g., approx.15 MeV protons) requires the fabrication of very thick (50--200 ..mu..m), high aspect ratio (10:1), gold Fresnel zone plates with narrow linewidths (5--25 ..mu..m) for use as coded apertures. A reactive ion etch technique in oxygen has been used to produce thick zone plate patterns in polymer films. The polymer patterns serve as electroplating molds for the subsequent fabrication of the free-standing gold zone plate structures.
1981-11-01
Energy Technology Data Exchange (ETDEWEB)
This paper examines the correlation between mechanical properties and the density, phase, and hydrogen content of deposited alumina layers, and compares them to those of sapphire and amorphous alumina synthesized through ion-beam irradiation of sapphire. Alumina films were deposited using electron beam evaporation of aluminum and co-bombardment with O{sub 2}{sup +} ions (30-230 eV) from an electron cyclotron resonance (ECR) plasma. The H content and phase were controlled by varying the deposition temperature and the ion energy. Sapphire was amorphized at 84 K by irradiation with Al and O ions (in stoichiometric ratio) to a defect level of 4 dpa in order to form an amorphous layer 370 nm thick. Nanoindentation was performed to determine the elastic modulus, yield strength and hardness of all materials. Sapphire and amorphized sapphire have a higher density and exhibit superior ...
1999-07-16
What Can a Dual beam Really Do?
International Nuclear Information System (INIS)
Full Text: Smallstage Dualbeam (SDB) systems, that is a Focussed Ion Beam column coupled with a SEM column, have been around for about five years now. There impact on the Semiconductor industry has been enormous, with virtually every lab having a SDB to produce, characterise and analyse cross sections and TEM samples on the Nano-scale. But what about other industries? What else can SDB system be used for? The SEM column in itself is a very powerful tool for sample characterisation, modification and analysis. An electron beam from a Tungsten or Thermal Field Emission source has enough current to allow sophisticated patterns to be created in photo-resist samples, a process known as lithography. The current is also high enough to allow for a process known as Electron Beam Induced Deposition (EBID), where the beam interacts with an introduced gas and material is deposited in a ...
2005-08-16
International Nuclear Information System (INIS)
Little clinical evidence has been provided to show the minimization of radiation resistance of tumors using high linear energy transfer radiation. We therefore investigated the radiobiological and molecular pathological aspects of carbon beam therapy. A total of 27 patients with squamous cell carcinoma (SCC) of the cervix were treated using a carbon beam and 50 control patients with SCC of the cervix using a photon beam. The expression of Ki-67, p53, and p27 proteins before radiotherapy and 5 and 15 days after therapy initiation were investigated using immunohistochemistry. Similar changes were observed in Ki-67 labeling index (LI) and p53 LI during carbon and photon beam therapies. However, for carbon beam therapy, the mean p27 LI significantly decreased from 25.2% before treatment to 18.6% on the 5th day after treatment initiation, followed by a significant increase to 36.1% on ...
2008-09-01
Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current
Energy Technology Data Exchange (ETDEWEB)
GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large ...
2011-04-01
Drift compression and final focus systems for heavy ion inertial fusion
Energy Technology Data Exchange (ETDEWEB)
Longitudinal compression of space-charge dominated beams can be achieved by imposing a head-to-tail velocity tilt on the beam. This tilt has to be carefully tailored, such that it is removed by the longitudinal space-charge repulsion by the time the beam reaches the end of the drift compression section. The transverse focusing lattice should be designed such that all parts of the beam stay approximately matched, while the beam smoothly expands transversely to the larger beam radius needed in the final focus system following drift compression. In this thesis, several drift compression systems were designed within these constraints, based on a given desired pulse shape at the end of drift compression systems were designed within these constraints, based on a given desired pulse shape at the end of drift compression. The occurrence of mismatches due to a rapidly ...
2001-05-01
The energy dependence of L_#alpha#/L_l X-ray intensity ratio produced by heavy-ion bombardment
International Nuclear Information System (INIS)
The energy dependence of the Yb and Au L_#alpha#/L_l X-ray intensity ratio, produced by 0.5 - 3.0 MeV/u Li, Be, C, N, F, and Si ion bombardment (Malhi and Gray, Phys. Rev. A 44, 7199, (1991)), measured at 90"0 relative to the beam axis, has been explained. While for light ion impact the behaviour of the alignment parameter as a function of impact velocity is dominant, for the impact of heavier ions the multiple ionization effects become important. Using Larkins' prescription in the last case, calculations have been performed, which agree well with the data over the whole energy range investigated. (Author).
1993-01-01
Study on development of multi-composite ceramics
Energy Technology Data Exchange (ETDEWEB)
Creation of new multi-composite materials is an essential issue to attain an innovative improvement of the current nuclear technology. In this paper, some highlights are focused on the research of creation of those materials and the relating subjects in NIRIM. (1) The KOH corrosion test method are expected to be efficiently available in the limited cases instead of Na corrosion test one. (2) The preliminary creation of the multi-composite ceramics were achieved by Y- ion implantation into sapphire and the RF sputtering, of which the specified orientation was realized by the existence of the buffer layer. The importance of the defect control are described with the relation to the corrosion resistance improvement. (3) The ion beam induced phenomena have been investigated on the surface change of silica glass and the crystallization of Cu film on SrTiO{sub 3}. (4) The electronic states of the alkali-metal adsorbed surfaces and ...
1996-03-01
International Nuclear Information System (INIS)
A high-precision Li isotope analysis was developed for determining the Li"+ ion emitted from lithium phosphate as an ion source material by a Re double-filament ionization method in the thermal ionization mass spectrometry. In this method, Li isotopic fractionation is distinctly less sensitive to the filament temperature than those in the previous methods, and stable and high ion beam intensity of more than 8 x 10"-"1"1 A for "7Li is obtained. These advantages in determining the "7Li/"6Li ratio result in the analytical reproducibility of 0.26 per mille (1#sigma#). Furthermore, the sample preparation is simple and the low temperature (850degC) required by this method ensures the analysis of the isotopic composition of small amounts of Li with less influence of Li contamination to the sample, compared with the previous methods. (author).
British Library Electronic Table of Contents (United Kingdom)
Successful electron capture dissociation (ECD) Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR MS) applications to peptide and protein structural analysis have been enabled by constant progress in implementation of improved electron injection techniques. The rate of ECD product ion formation has been increased to match the liquid chromatography and capillary electrophoresis timescales, and ECD has been combined with infrared multiphoton dissociation in a single experimental configuration to provide simultaneous irradiation, fast switching between the two techniques, and good spatial overlap between ion, photon, and electron beams. Here we begin by describing advantages and disadvantages of the various existing electron injection techniques for ECD in FT-ICR MS. We next ...
2008-01-01
Energy Technology Data Exchange (ETDEWEB)
Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from ...
1995-05-01
Enhancement of electrical conductivity of ion-implanted polymer films
Energy Technology Data Exchange (ETDEWEB)
The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21/sup 0/C +/- 1/sup 0/C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F/sup +/, Ar/sup +/, or As/sup +/ ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10/sup 18/ to 1 x 10/sup 20/ ions/m/sup 2/. The conductivity of films implanted with As/sup +/ was approximately one order greater than those implanted with Ar/sup +/, which in turn was approximately one-half order greater than those implanted with F/sup +/. The conductivity of the most conductive film approx.1 S/m) was almost 14 orders of magnitude greater than the ...
1985-01-01
Challenges in fabrication of 180deg magnet chamber
International Nuclear Information System (INIS)
180 deg magnet chamber is used in Folded Tandem Ion Accelerator for passage and 180 deg bending of ion beam. The chamber is placed between 180 deg terminal magnet (Electro-magnet), which is used for bending, and analysing the beams. Magnet with a particular magnetic field strength bends ions of only specified mass energy product through a precise path. There is also a space limitation in the direction of magnetic field. Both of them require the magnet chamber to be of a close tolerance. Accuracy of center distance between inlet and outlet port of the magnet chamber has to be at par with the concentricity of high energy and low energy beam line. To achieve this we started the fabrication of magnet chamber by following two methods: a) Circular rolling and bending of rectangular tube for 180 deg sector of magnet chamber b) Machining 180 deg sector in two half and ...
2006-11-01
Production of high-q ions by laser bombardment method
International Nuclear Information System (INIS)
The expanding plasma produced when an intense pulse of laser radiation is focused in vacuum onto a solid target has been used as a source of highly stripped ions for collision cross-section measurements. Usable fluxes of carbon nuclei at energies of a few hundred eV/charge have been obtained by irradiation of graphite with pulses of CO"2 laser radiation at a focused power density of 3 x 10_1_0 W/cm_2. Bombardment of aluminum and iron targets at comparable power levels have yielded ions of maximum charges of 9 and 16 respectively. A time-of-flight apparatus has been constructed to utilize the laser source for measurement of electron capture cross sections for highly stripped ions in gases at energies in the few hundred eV/charge range. Apertures collimate an ion beam from the plasma blowoff, and an electrostatic analyzer selects ions from the expanding plasma ...
1981-01-01
Energy Technology Data Exchange (ETDEWEB)
An RF plasma sputter type heavy negative ion source, which can deliver mA-class negative ion beams (12.1 mA, 1.6 mA and 2.3 mA for Cu{sup -}, C{sup -} and C{sub 2}{sup -} currents, respectively) in dc-mode operation, has been developed. In ion source, a dense plasma of 10{sup 11} cm{sup -3} order was generated in the xenon gas pressure of 10{sup -3}-10{sup -2} Pa with an rf (13.56 MHz) power of 200 - 300 W by using an RF coil, and a relatively large sputtering target of 42 mm in diameter was used. As for intense negative ion beams of silicon or boron which are important dopants for semiconductor fabrication, negative ion extraction properties of the negative ion source was investigated. The extracted total negative ion currents of 4.4 mA for a silicon target and 2.8 mA for a LaB{sub 6} target were ...
1993-12-31
Fundamentals of focused ion beam nanostructural processing: below,at and above the surface
Energy Technology Data Exchange (ETDEWEB)
This article considers the fundamentals of what happens in asolid when it is impacted with a medium energy gallium ion. The study ofthe ion/sample interaction at the nanometer scale is applicable to mostfocused ion beam (FIB) based work even if the FIB/sample interaction isonly a step in the process, e.g., micromachining or microelectronicdevice processing. Whereas the objective in other articles in this issueis to use the FIB tool to characterize a material or to machine a deviceor transmission electron microscopy (TEM) sample, the goal of the FIB inthis article is to have the FIB/sample interaction itself become theproduct. To that end, the FIB/sample interaction is considered in threecategories according to geometry: below, at, and above the surface.First, the FIB ions can penetrate the top atom layer(s) and interactbelow the surface. Ion implantation and ...
2007-03-30
Defect engineering via ion implantation to control B diffusion in Si
International Nuclear Information System (INIS)
The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological ...
2009-03-15
Sample method for formation of nanometer scale holes in membranes
Energy Technology Data Exchange (ETDEWEB)
When nanometer scale holes (diameters of 50 to a few hundred nm) are imaged in a scanning electron microscope (SEM) at pressures in the 10{sup -5} to 10{sup -6} torr range, hydrocarbon deposits built up and result in the closing of holes within minutes of imaging. Additionally, electron beam deposition of material from a gas source allows the closing of holes with films of platinum or TEOS oxide. In an instrument equipped both with a focused ion beam (FIB), and an SEM, holes can be formed and then covered with a thin film to form nanopores with controlled openings, ranging down to only a few nanometers.
2003-02-24
International Nuclear Information System (INIS)
Excitation of the HF electric field in the local plasma resonance region (LPRR) of inhomogeneous plasma by pumping electric field or modulated electron beam results to appearance of the ponderomotive force that presses plasma out of this region. Density cavity is formed in the LPRR due to this field. Further dynamics in this region depends on the plasma properties. For plasma with hot electrons ion-acoustic pulses run away from the cavity. at the local density maximum the new peak of electric field is excited. It results to the formation of new density cavity, etc. For isothermal plasma the density jump is formed.
2006-01-01
Field emission dark current of technical metallic electrodes
International Nuclear Information System (INIS)
In the framework of the Low Emittance Gun (LEG) project, high gradient acceleration of a low emittance electron beam will be necessary. In order to achieve this acceleration, a -500 kV, 250 ns FWHM, pulse will be applied between two electrodes. Those electrodes should sustain the pulsed field without arcing, must not outgas and must not emit electrons. Ion back bombardment, and dark current will be damaging to the electron source as well as for the low emittance beam. Electrodes of commercially available OFE copper, aluminium, stainless steel (SS), titanium and molybdenum were tested, following different procedures including plasma glow discharge cleaning.
2007-04-21
Fabrication of 10nm diameter carbon nanopores
Energy Technology Data Exchange (ETDEWEB)
The addition of carbon to samples, during imaging, presents a barrier to accurate TEM analysis, the controlled deposition of hydrocarbons by a focused electron beam can be a useful technique for local nanometer-scale sculpting of material. Here we use hydrocarbon deposition to form nanopores from larger focused ion beam (FIB) holes in silicon nitride membranes. Using this method, we close 100-200nm diameter holes to diameters of 10nm and below, with deposition rates of 0.6nm per minute. I-V characteristics of electrolytic flow through these nanopores agree quantitatively with a one dimensional model at all examined salt concentrations.
2008-09-25
Energy Technology Data Exchange (ETDEWEB)
White beam Laue micro-diffraction was performed on directionally solidified, single-crystal Mo pillars in the as-grown state, after focused ion beam (FIB) milling and after pre-straining. The Laue diffraction peaks from the as-grown pillars are very sharp and show no broadening, similar to those from single-crystal Si wafers. Significant broadening and streaking of the peaks occurred after FIB milling and pre-straining, indicative of the damage these treatments induce in the nearly perfect crystal structure of the directionally solidified Mo pillars.
2010-05-01
International Nuclear Information System (INIS)
Nano-indentation has been used to assess the hardness of equiaxed grains of #alpha#-Ti as a function of orientation. Surface normals of these grains in metallographic sections were assessed using orientation imaging microscopy. Thin membranes of material from below a series of nano-indentations were excised by use of a dual-beam focused ion beam instrument. In this way, the dislocation substructures beneath individual indentations were characterized using transmission electron microscopy, permitting an identification of both statistically stored and geometrically necessary dislocations.
2005-07-25
Performance of Alcator C-Mod core Thomson scattering system
Energy Technology Data Exchange (ETDEWEB)
Design of the Alcator C-Mod Thomson scattering (TS) diagnostic is discussed and the results of the measurements are presented. The TS system has six spatial channels with observation volumes evenly distributed between the midplane and the edge of the plasma. Each channel is capable of measuring the electron density in the range N{sub e}=5{times}10{sup 19}{endash}5{times}10{sup 21} m{sup {minus}3} and temperature from T{sub e}=200 eV to 10 keV. A 30 Hz, 1.5 J per pulse Nd-YAG laser is employed allowing the measurements of evolution of T{sub e} and N{sub e} profiles during plasma shot. A laser beam position control and feedback system provides for the beam alignment stability and reliable electron density measurements. Examples of the core density and temperature profiles measured at different stages of the plasma evolution are discussed. {copyright} {ital 1999 American Institute of Physics.}
1999-01-01
Free electron laser facilities employing a 150-MeV linac injector for Saga synchrotron light source
International Nuclear Information System (INIS)
Free electron laser (FEL) facilities as the FELI FEL Facility are proposed, for which a 150-MeV linac type injector for a Saga synchrotron light source (SLS) is employed in FEL mode. The linac has two operating modes; short macropulse mode a 1 #mu#s at 150 MeV for injection to a 1 - 1.3-GeV third generation type storage ring and long macropulse mode of 12 #mu#s at 100 MeV for four FEL Facilities. The macropulse beam consists of a train of several ps, 0.6 nC microbunches (peak current 100 A) repeating at 89.25 MHz. We are aiming to supply high power level photon beams covering an attractive wavelength range from 0.05 nm (25 keV) to 200 #mu#m (0.006 eV) for scientific researches, bio-medical and industrial applications, using the Saga third generation type SLS with a superconducting wiggler and the proposed four FEL Facilities. (author)
1999-12-01
Energy Technology Data Exchange (ETDEWEB)
The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.
2008-10-31
Observation of 77 K staircase I-V characteristics in 2DEG's irradiated by a focused ion beam
International Nuclear Information System (INIS)
Staircase current-voltage (I-V) characteristics, observed at 77 K in narrow 2DEG channels irradiated by a single line scan of a focused ion beam (FIB), is reported in detail. These staircases are interpreted as evidence of single electron tunneling through a naturally occurring specific Coulomb island in the random potential fluctuations created by FIB damage. Clear comparison is made between the I-V's taken from wide channels and those from narrow channels. Based on orthodox calculations of the I-V characteristics, it is shown that highly asymmetric tunnel junctions are needed to explain our data. This is consistent with the random nature of the potential landscape in the FIB damaged region. (author).
Nuclear astrophysics with radioactive ion beams
International Nuclear Information System (INIS)
Nuclear astrophysics seeks for a possible explanation of the observed abundance distribution of various elements and their isotopes in the universe. Most of the relevant nuclear reactions take place in thermally equilibrium environments with bare nuclei, rather than accelerated and head-on colliding situations with low ionisation states of reactant atoms and molecules that are emulated in the laboratories. Moreover, the temperature of the astrophysical environments is quite often low compared to the centre-of-mass energy of the projectile nuclides, that is required for the reaction to be meaningfully investigated in the laboratory. Therefore, an extrapolation of the data on the reaction cross sections to very low energies and to extremely high density situations is generally called for, which are substantially altered every now and then for a number of astrophysically important reactions. The radioactive ion beams will provide us important data ...
Measurement of electron-impact single-ionization cross sections of Ar"8"+
International Nuclear Information System (INIS)
A crossed-electron-ion-beam experiment was used to measure the total ionization cross section for Ar"8"+ in the energy range from 50 to 600 eV. The present results are roughly in agreement with the previous measurements of Defrance et al. [Nucl. Instrum. Methods Phys. Res. B 23, 256 (1987)] above 450 eV. However, the present measurements show a significant contribution below the threshold for direct ionization. The present measurements agree with the distorted-wave calculations of Pindzola et al. [Phys. Rev. A 41, 1375 (1990)] when 3% of the incident ion beam is assumed to be in metastable states and excitation autoionization from metastable states is included.
Instabilities in Focused Ion Beam-patterned Au nanowires
British Library Electronic Table of Contents (United Kingdom)
Focused Ion Beam (FIB) technology has become an indispensable enabling tool for micro nano fabrications. One important application is to use FIB for patterning conducting nanowires of metals down to a few tens of nanometre for applications such as interconnects, heaters and temperature nanosensors. A series of experiments on Au nanowires fabricated by FIB on SixNy membrane show that nanowires with width 50nm have structural instabilities. These are liquid like and first show-up as undulations in nanowire width with clearly defined wave lengths. For smaller widths (20nm) the instabilities grow and the wires eventually break-up into spherical balls. Further experiments show that the nanowires can be made stable to smaller widths by the use of a Cr underlayer to enhance surface wetting. The o...
2011-01-01
Focused ion beam insulator deposition
Energy Technology Data Exchange (ETDEWEB)
Focused Ion Beam (FIB) repairs and modifications to integrated circuits have been somewhat limited in the past due to the physical limitations imposed by the nodes of interest being buried under metal layers, the need for multiple layers of FIB generated interconnects, and the like. With the advent of FIB deposited INSULATOR materials, integrated circuit modifications can now be much more complex. The two primary goals of this project were (1) to determine the appropriateness of FIB insulator deposition for aiding FIB connections to metal nodes buried under power busses, and (2) development of a technique to do this. The work presented in this paper includes the development and characterization phases of adding INSULATION DEPOSITION to a FEI 611 FIB system, the problems encountered, their work around, and the aforementioned application of this technology.
1995-12-31
Fabrication of novel quantum cascade lasers using focused ion beam (FIB) processing
Energy Technology Data Exchange (ETDEWEB)
Focussed ion beam (FIB) processing has been applied to the fabrication of novel InP-based cleaved coupled cavity (CCC) quantum cascade lasers (QCL). Gas assisted etching using XeF{sub 2} has been shown to significantly reduce the redeposition of sputtered material onto the mirror surfaces during final milling. For the unprocessed laser a broad spread of lasing peaks are observed between 9.72{mu}m to 9.78{mu}m at a current of 380mA (1kA/cm{sup -2}). After FIB processing, substantial side mode suppression is observed on applying a current of 20mA (100A/cm{sup -2}) to the short section and the main lasing peak is observed at 9.77{mu}m.
2006-02-22
Fabrication of novel quantum cascade lasers using focused ion beam (FIB) processing
International Nuclear Information System (INIS)
Focussed ion beam (FIB) processing has been applied to the fabrication of novel InP-based cleaved coupled cavity (CCC) quantum cascade lasers (QCL). Gas assisted etching using XeF_2 has been shown to significantly reduce the redeposition of sputtered material onto the mirror surfaces during final milling. For the unprocessed laser a broad spread of lasing peaks are observed between 9.72#mu#m to 9.78#mu#m at a current of 380mA (1kA/cm"-"2). After FIB processing, substantial side mode suppression is observed on applying a current of 20mA (100A/cm"-"2) to the short section and the main lasing peak is observed at 9.77#mu#m.
2006-02-22
DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants
Energy Technology Data Exchange (ETDEWEB)
A static plasma grating has been demonstrated experimentally in a large optical cavity FIB-DBR GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam (FIB). The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented here. The computed results show that /kappa/ can be increased by more than an order of magnitude over the 15 cm/sup -1/ experimentally. Therefore, FIB-DBR (or -DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.
1989-06-01
DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants
International Nuclear Information System (INIS)
A static plasma grating has been demonstrated experimentally in a large optical cavity FIB-DBR GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam (FIB). The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented here. The computed results show that #kappa# can be increased by more than an order of magnitude over the 15 cm"-"1 experimentally. Therefore, FIB-DBR (or -DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.
International Nuclear Information System (INIS)
Off-axis electron holography is used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope (TEM) using focused ion beam (FIB) milling from the substrate side of the semiconductor device. The measured electrostatic potential is compared with results obtained from TEM specimens prepared using the more conventional 'trench' FIB geometry. The use of carbon coating to remove specimen charging effects, which result in electrostatic fringing fields outside 'trench' specimens, is demonstrated. Such fringing fields are not observed after milling from the substrate side of the device. Analysis of the measured holographic phase images suggests that the electrically inactive layer on the surface of each FIB-milled specimen typically has a thickness of 100 nm.
2005-04-01
Atom-probe field-ion microscopy investigation of CMSX-4 Ni-base superalloy laser beam welds
Energy Technology Data Exchange (ETDEWEB)
CMSX-4 superalloy laser beam welds were investigated by transmission electron microscopy and atom probe field-ion microscopy (APFIM). The weld microstructure consisted of fine (10- to 50-nm) irregularly shaped {gamma}` precipitates (0.65 to 0.75 volume fraction) within the {gamma} matrix. APFIM compositions of the {gamma} and {gamma}` phases were found to be different from those in the base metal. Concentration profiles across the {gamma} and {gamma}` phases showed extensive variations of Cr, Co and Al concentrations as a function of distance within the {gamma} phase. Calculated lattice misfits near the {gamma}/{gamma}` interface in the welds are positive values compared to the negative values for base metal. (orig.).
1996-09-01
A novel EPROM device fabricated using focused boron ion-beam implantation
Energy Technology Data Exchange (ETDEWEB)
A novel floating-gate avalanche injection (FAMOS) type erasable programmable read-only memory (EPROM) device is demonstrated, with a heavily focused ion-beam (FIB) implanted region of about 0.2-..mu..m width at the drain edge of the channel. This heavily B/sup +/-doped region permits a higher electric field near the drain edge, resulting in a remarkable increase of the hot-carrier generation rate, and reduces both the programming voltage and programming time. A three-dimensional device simulator, CADDETH, predicted that the electric field at the drain edge would increase by about six times, which would lead to hot-carrier generation efficiency three orders of magnitude higher.
1987-06-01
Energy Technology Data Exchange (ETDEWEB)
A time-of-flight mass spectrometer has been constructed to measure the energy spectra of particles scattered by 10/sup 0/ with primary energies between 200 eV and 15 keV. The energy resolution ..delta..E/E of the system is between 0.1 and 0.4%. Energy spectra of scattered molecules and their dissociation products are shown for 570 eV H/sub 2//sup +/ and 4430 eV N/sub 2//sup +/ as projectiles. Electron capture into unbound states of the neutral molecule, with perhaps some contribution from mutual scattering within the molecule, appears to explain the observed dissociation product energy spectra peak widths.
1984-03-01
International Nuclear Information System (INIS)
A time-of-flight mass spectrometer has been constructed to measure the energy spectra of particles scattered by 10"0 with primary energies between 200 eV and 15 keV. The energy resolution #DELTA#E/E of the system is between 0.1 and 0.4%. Energy spectra of scattered molecules and their dissociation products are shown for 570 eV H_2"+ and 4430 eV N_2"+ as projectiles. Electron capture into unbound states of the neutral molecule, with perhaps some contribution from mutual scattering within the molecule, appears to explain the observed dissociation product energy spectra peak widths. (orig.).
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
Energy Technology Data Exchange (ETDEWEB)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
1998-05-01
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
International Nuclear Information System (INIS)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
1998-05-01
Partial wave expansion of ion-atom elastic scattering in solids
International Nuclear Information System (INIS)
Elastic scattering cross sections of keV protons in solids (Z=3-82) are calculated using the partial wave expansion technique and the ''muffin-tin'' bound-atom potential. The differential cross sections for small scattering angles of less than 10deg are smaller than those with the Ziegler-Biersack-Littmark potential at all energies and for all solids, although, for larger angles, the two cross sections agree with each other. The mean free paths of the protons in the solids, obtained from the total cross sections, decrease very slowly with decreasing energy. Furthermore, at low energies they approach half the nearest-neighbor distance, which is taken as the radius of the augmented plane wave sphere in the muffin-tin model of crystalline solids. (orig.).
Milling materials using CO{sub 2} clusters; Materialbearbeitung durch Clusterionenbeschuss
Energy Technology Data Exchange (ETDEWEB)
The Sputter coefficient of accelerated CO{sub 2} cluster ions hitting surfaces of various materials is investigated. For copper it varies proportional to the 2nd power of the energy between 155 and 260 keV. The rate of erosion for different target materials varies by two orders of magnitude from tungsten to PMMA. Diamond is eroded fairly quickly, while aluminum is eroded less than corundum (Al{sub 2}O{sub 3}). No simple correlation of the sputter coefficient on the bulk material properties is found. For copper the angular distribution of sputtered material is measured and found to be following roughly a cosine distribution. By using masks different microstructures have been produced in cobalt-samarium magnets, diamond and glass. (orig.)
1993-10-01
International Nuclear Information System (INIS)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.
2002-01-01
Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
Energy Technology Data Exchange (ETDEWEB)
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
2004-12-15
Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
International Nuclear Information System (INIS)
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
2004-12-15
Effect of pressure on the valence state of Yb in YbPd_2Si_2
International Nuclear Information System (INIS)
The intermediate valent behaviour of YbPd_2Si_2 has been studied under pressure in the temperature range from 1.2 K to 90 K by using the 84 keV Moessbauer transition in "1"7"0Yb. At 54 kbar and 4.2 K we obtain an increase of the electric field gradient (EFG) by a factor of #approx =# 3. In addition, the EFG varies strongly with temperature, in contrast to the behaviour at ambient pressure. At 1.2 K a change of the hyperfine pattern is observed indicating a magnetic character of the Yb ion. These results provide evidence of a pressure induced change of the valence state close to 3+. (orig.).
Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions
Energy Technology Data Exchange (ETDEWEB)
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).
1997-12-01
A principle of charged particle trapping by RF electromagnetic field in the spherical cavity
Energy Technology Data Exchange (ETDEWEB)
A new principle of particle trapping in the simple spherical cavity using both electric and magnetic components of radiofrequency electromagnetic field is proposed. The electric component of H {sub 12} oscillating mode drives the fast particle oscillations, while the magnetic component synchronously bends the trajectories to the cavity center. A specially developed theory of particle stability predicts dense and energetic electron cluster in the trap. Numerical simulations of particle dynamics in the complete electromagnetic field taking into account both space charge and particle-induced magnetic field are in good agreement with the analytic results, giving a density of 2.6*10{sup 1} electrons/cm{sup 3} and an average kinetic energy of around 30 keV at an operating frequency of 3 GHz. Being used at lower frequency, spherical cavity can trap protons and heavier ions too, but with lower density and kinetic energy.
2005-11-21
Energy Technology Data Exchange (ETDEWEB)
In radiation therapy with hadron beams, conformal irradiation to a tumour can be achieved by using the properties of incident ions such as the high dose concentration around the Bragg peak. For the effective utilization of such properties, it is necessary to evaluate the volume irradiated with hadron beams and the deposited dose distribution in a patient's body. Several methods have been proposed for this purpose, one of which uses the positron emitters generated through fragmentation reactions between incident ions and target nuclei. In the previous paper, we showed that the maximum likelihood estimation (MLE) method could be applicable to the estimation of beam end-point from the measured positron emitting activity distribution for mono-energetic beam irradiations. In a practical treatment, a spread-out Bragg peak (SOBP) beam is ...
2005-12-21
Energy Technology Data Exchange (ETDEWEB)
The use of the focused ion beam (FIB) systems has increased to a high level in recent years. The imaging, milling, and deposition capabilities of the FIB make it the ideal instrument for e.g., site-specific failure analysis, specimen preparation and nano-machining. Ion channelling contrast allows for selective imaging of polycrystalline and polyphase microstructures. In addition, the FIB and CrossBeam registered instruments are unique stand-alone analytical tools. Their vast capabilities have enabled numerous applications into the semiconductor and materials sciences applications. These integrated CrossBeam registered Tools enable the observation and direct control of the FIB operation in real time. In addition to the improved accuracy and resolution the electron beam adds analytical capabilities as STEM, EDS and EBSP to the instruments. To ensure a safe and ...
2005-07-01
Evaluation of Mechanical Properties and Microstructure in Ion-Irradiated Surface Layer
Target vessel materials used in spallation neutron source will be exposed to proton and neutron irradiation and mercury immersion environments. In order to evaluate the surface degradation of the vessel candidate materials due to such environment, the triple-ion beam irradiation taking the spallation reaction into account and mercury immersion tests were carried out. Mechanical properties of the gradient surface layer were evaluated by the inverse analysis with multi-layer model that considers distribution of surface characteristic was applied to the load and depth curves measured by using the instrumented indentation machine. Transmission electron microscopic observations were performed to evaluate the changes of microstructure in irradiated surface layer using focused ion-beam cut micro-specimen. The mechanical properties distributions in the surface layer were evaluated quantitatively and the changes in microstructures ...
2005-01-01
Effects of focused-ion-beam irradiation on perpendicular write head performance
International Nuclear Information System (INIS)
The effects of focused-ion-beam (FIB) irradiation on writer performance were examined on a perpendicular recording system. The entire top pole was irradiated by FIB with ion doses from 0 to 300 pC/#mu#m"2. PW_5_0 and signal to noise ratio (SNR) were characterized using a spin stand before and after FIB irradiation. It was found that there is degradation of PW_5_0 and SNR due to FIB irradiation. At the maximum dose (300 pC/#mu#m"2), PW_5_0 increased by 33 nm (>30%) and SNR decreased by 5 dB (>25%). The degradation was attributed to the physical pole tip recession and the formation of a magnetic dead layer. The thickness of the magnetic dead layer was estimated by analyzing the write spacing loss. Using atomic force microscopy and stage current change monitored during FIB process, it was found that the entire 4-nm protective carbon layer was etched away with a dose of 25 pC/#mu#m"2. This result implies that the degradation with ...
2003-05-15
Effective removal of Ga residue from focused ion beam using a plasma cleaner
International Nuclear Information System (INIS)
Samples prepared using the focused ion beam (FIB) inevitably contain the surface damage induced by energetic Ga"+ ions. An effective method of removing the surface damage is demonstrated using a plasma cleaner, a device which is widely used to minimize the surface contamination in scanning transmission electron microscopy (STEM). Surface bombardment with low-energy Ar"+ ions was induced by biasing the sample immersed in the plasma source, so as to etch off the surface materials. The etch rates of SiO_2, measured with a bias voltage of 100-300 V, were found to vary linearly with both the time and bias and were able to be controlled from 1.4 to 9 nm/min. The removal of the Ga residue was confirmed using energy dispersive spectroscopy (EDS) after the plasma processing of the FIB-prepared sample. When the FIB-prepared sample was processed via plasma etching for 10 min with a bias of 150 V, the surface Ga ...
Heavy-ion linear induction accelerators as drivers for inertial fusion power plants
Energy Technology Data Exchange (ETDEWEB)
A linear induction accelerator that produces a beam of energetic heavy ions (T -- 10 GeV, A -- 200 amu) is a prime candidate as a driver for an inertial fusion power plant. Some early perceptions were that heavy-ion drive fusion would not be cost-competitive with other power sources because of the high cost of the accelerators. However, improved understanding of the physics of heavy-ion transport and acceleration (supported by experimental results), combined with advances in accelerator technology, have resulted in accelerator design costs -- 50% of previous estimates. As a result, heavy-ion drive fusion power plants are now projected to be cost-competitive with other conceptual fusion power plants. A brief formulation of transport and acceleration physics is presented here, along with a description of the induction Linac cost optimization code LIACEP. Cost trends are presented and ...
1988-02-01
Heavy-ion linear induction accelerators as drivers for inertial fusion power plants
International Nuclear Information System (INIS)
A linear induction accelerator that produces a beam of energetic heavy ions (T #approx =# 10 GeV, A #approx =# 200 am#mu#) is a prime candidate as a driver for an inertial fusion power plant. Some early perceptions were that heavy-ion driven fusion would not be cost-competitive with other power sources because of the high cost of the accelerators. However, improved understanding of the physics of heavy-ion transport and acceleration (supported by experimental results), combined with advances in accelerator technology, have resulted in accelerator design costs -- 50% of previous estimates. As a result, heavy-ion driven fusion power plants conceptual fusion power plants. A brief formulation of transport and acceleration physics is presented here, along with a description of the induction Linac cost optimization code LIACEP. Cost trends are presented and discussed, along with specific ...
International Nuclear Information System (INIS)
The steady state surfaces of ion bombarded 3C-, 4H- and 6H-SiC samples were studied by means of reflected electron energy loss spectroscopy (REELS). The REELS exhibit a well-defined loss peak in the region of about 20 eV. The position of the maximum of the loss peak depends on the bombarding ion energy (decreasing with increasing ion energy), and on the primary electron beam energy (increasing with increasing primary energy). This behavior can be explained if we suppose that the plasmon energy in the altered layer (produced by ion bombardment) is different from that of the unaltered bulk. In this case the measured loss peak is the sum of two overlapping plasmon peaks. With modeling the system as a homogeneous altered layer and a homogeneous unaltered substrate the plasmon energy in the altered layer was derived to be 19.8 eV. The large change of the plasmon energy with respect to ...
2005-12-15
Transient enhanced diffusion from decaborane molecular ion implantation
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial ...
1998-10-01
Transient enhanced diffusion from decaborane molecular ion implantation
International Nuclear Information System (INIS)
Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials ...
1998-10-01
Optical image storage in ion implanted PLZT ceramics
International Nuclear Information System (INIS)
We have demonstrated that optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-UV light with photon energies greater than the band gap energy of approx. equal to 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform UV illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of >= 100:1 and spatial resolution of approx. equal to 10 #mu#m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. equal to 100 mJ/cm"2) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. We have recently found from studies of H, He and Ar implanted PLZT that the photosensitivity can ...
Ion beam crystallography of metal-silicon interfaces: Pd-Si(111)
Energy Technology Data Exchange (ETDEWEB)
The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.
1982-07-09
Ion beam crystallography of metal-silicon interfaces: Pd-Si(111)
International Nuclear Information System (INIS)
The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).
Application of high energy ion beam for the control of boron diffusion
Energy Technology Data Exchange (ETDEWEB)
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
2006-01-15
Application of high energy ion beam for the control of boron diffusion
International Nuclear Information System (INIS)
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
2006-01-01
A traveling wave direct energy converter for a D-"3He fusion reactor
International Nuclear Information System (INIS)
A concept of a traveling wave direct energy converter (TWDEC) is developed for 14.7-MeV fusion protons based on the principle of a backward wave oscillator. Separation of fusion protons from thermal ions is accomplished by using ExB ion drift. Energy conversion rate up to 0.87 is attained by applying three-stage modulation of the proton beam. A one-dimensional particle-circuit code is developed to examine self-excitation of the traveling wave and its stability under loading. Electrostatic wave with a fixed frequency is excited spontaneously, and stability of the wave is ensured under loading. (author).
Synchrotron radiation from electron beams in plasma-focusing channels.
Spontaneous radiation emitted from relativistic electrons undergoing betatron motion in a plasma-focusing channel is analyzed, and applications to plasma wake-field accelerator experiments and to the ion-channel laser (ICL) are discussed. Important similarities and differences between a free electron laser (FEL) and an ICL are delineated. It is shown that the frequency of spontaneous radiation is a strong function of the betatron strength parameter a(beta), which plays a role similar to that of the wiggler strength parameter in a conventional FEL. For a(beta) > or approximately 1, radiation is emitted in numerous harmonics. Furthermore, a(beta) is proportional to the amplitude of the betatron orbit, which varies for every electron in the beam. The radiation spectrum emitted from an electron beam is calculated by averaging the single-electron spectrum over the electron distribution. This leads to a frequency broadening of ...
2002-05-20
Nuclear fragmentation of clinical silicon beam
Energy Technology Data Exchange (ETDEWEB)
Heavy ions used for biomedical studies fragment when they pass through matter. It is known that different fragments cause different types of biological damage. In this paper, results pertaining to differrent kinds of secondary fragments produced by a /sup 28/Si beam at 463 MeV/nucleon in its interaction with nuclear emulsion are presented. It is observed that the production frequencies of secondary fragments are independent of the target. Partial production cross sections and fluences of the secondary fragments are also discussed. The partial production cross sections for different fragments at three lower energy ranges are practically the same within their statistical errors except for the cross section for Li fragments, which is larger by almost a factor of 1.5 at the lowest energy investigated. The dose contributions of the primary Si beam and its components at different points of the Bragg curve are presented for two ...
1985-02-01
3D investigations of plasma erosion craters using FIB/SEM dual-beam techniques
Energy Technology Data Exchange (ETDEWEB)
Plasma erosion craters caused by electrical discharges on the surface of materials are important features of the erosion processes resulting in the degradation of electrodes. In the present work, electrical discharges were produced on a bi-metallic Ni/Cu multilayered surface. By means of dual beam techniques, coupling a focused ion beam (FIB) and a scanning electron microscope (SEM), not only the surface but also the sub-surface structure of the craters were investigated. Using the combination of SEM, FIB and STEM-EDX, a complete three-dimensional investigation of the craters were carried out. The analysis of the microstructure modifications as a function of depth enabled to determine the field of interaction between the plasma and the material. (orig.)
2006-09-15
International Nuclear Information System (INIS)
A new foilless diode with a non-magnetically immersed cathode was recently designed and built for the Sandia Recirculating Linear Accelerator (RLA). Because there is also no radial component of electric field at the cathode, the electron beam starts almost parallel and is matched to a solenoidal transport system with minimum increase in divergence and radius. The electrode emission surface is specified by an area covered with felt which undergoes explosive electron emission at low electrical field stresses (60 kV/cm). The 1.7 MV, 4.8-kA produced beam is transported 1.5 meters to the injection region of the racetrack via a system of solenoids and focusing coils. The maximum transverse velocity component at injection point (1.5 m downstream from the cathode surface) is #beta# perpendicular = 0.03 and the radius r = 2.8 cm which give a quite small beam emittance #epsilon# = 0.08 rad-cm. Three- dimensional numerical simulations ...
1989-06-01
International Nuclear Information System (INIS)
The authors have designed and constructed four types of electron-beam diodes for the new 4-MV RLA injector: a non-immersed foilless diode, a magnetically immersed foilless diode, a foil diode and an ion-focused foilless diode, They are tailored to fit the new injector cavity. The design goals were to produce high quality 10-kA to 20-kA electron beams with a #beta# perpendicular smaller than 0.2 and a beam radius of the order of 2 cm. These beams will be matched to the RLA IFR channel so #beta# perpendicular must be equal to or smaller than the square root of the ratio of the beam current versus Alfven current for f_e = 1. A reentrant anode geometry was selected for the injector cavity design, because it offers substantial savings on the required amount of feromagnetic cores. The inner radius of the outside shell, now only 30 cm, would have been twice as large ...
1991-03-01
Focused ion beam assisted three-dimensional rock imaging at submicron scale
Energy Technology Data Exchange (ETDEWEB)
Computation of effective flow properties of fluids in porous media based on three dimensional (3D) pore structure information has become more successful in the last few years, due to both improvements in the input data and the network models. Computed X-ray microtomography has been successful in 3D pore imaging at micron scale, which is adequate for many sandstones. For other rocks of economic interest, such as chalk and diatomite, submicron resolution is needed in order to resolve the 3D-pore structure. To achieve submicron resolution, a new method of sample serial sectioning and imaging using Focused Ion Beam (FIB) technology has been developed and 3D pore images of the pore system for diatomite and chalk have been obtained. FIB was used in the milling of layers as wide as 50 micrometers and as thin as 100 nanometers by sputtering of atoms from the sample surface. The focused ion beam, consisting of ...
2003-05-09
International Nuclear Information System (INIS)
The introduction of oxygen in the vicinity of a metallic target surface, bombarded with positive argon ions of twenty kiloelectron-volts, increases the number of sputtered atoms in the excited state. This phenomenon of exaltation, very sensitive in the case of nickel and aluminium, is much less marked in the case of molybdenum. Moreover, the emission of excited particles coming from the beam's ions is not modified. A quantum-mechanical model of a kinetic emission process, which permits the interpretation of the clean metallic target's emission phenomena, seems insufficient to explain all of the results obtained in the presence of oxygen. In this last case one can therfore use a thermodynamic model in which excited metallic particles can be formed directly by chemical surface reactions of neutralization or reduction. (orig.).
British Library Electronic Table of Contents (United Kingdom)
This study emphasizes the need for a systematic and in-depth connection between the progress in quantum theory of energetic ion collisions and applications to hadron therapy. Scattering theory for fast ion beams has reached its stage of development where accurate and robustly applicable methodologies can advantageously be exported to applied fields such as space research, fusion energy program, medicine, etc. In particular, distorted wave collision theories at high energies readily provide total, partial and fully differential cross sections for inelastic collisions of ionic projectiles with any target system. By numerous and thorough testings, such theoretical cross sections were found to exhibit excellent agreement with experimental data on atomic targets. Adequate extensions of these me...
2010-01-01
Fluence- and exposure-to-dose conversion for human whole-body gamma irradiation
International Nuclear Information System (INIS)
... kev range 10-100 kev range 100-1000 man mev range 01-10 personnel
1978-01-01
The peak to background method in quantitative ion microprobe analysis of thick biological specimens
Energy Technology Data Exchange (ETDEWEB)
The use of the ratio of the characteristic intensity to the continuum background intensity (P/B ratio) of the X-ray spectrum for a quantitative ion microprobe (IMP) or PIXE (particle induced X-ray emission) analysis of thin biological specimens was proposed previously. The IMP analysis of thick biological specimens is also of considerable practical use. In this paper, the possibility of using the P/B ratio to quantify minor elements in thick biological specimens is investigated. The epoxy resin based standards with gradual concentrations of KCNS up to 0.6 mol/kg and NBS bovine liver were analyzed by a 27 MeV {alpha} particle microprobe. The measured peak to background ratios (between 4.4 to 5.7 keV) agreed well with the theoretical calculations. The calculations showed that the concentration dependence of the P/B ratios was determined mainly by the absorption of X-rays in specimens. The results indicate that the P/B method is useful for IMP ...
1991-05-01
Study of iodine migration in zirconia using stable and radioactive ion implantation
Energy Technology Data Exchange (ETDEWEB)
The large uranium fission cross section leading to iodine and the behaviour of this element in the cladding tube during energy production and afterwards during waste storage is a crucial problem, especially for {sup 129}I which is a very long half-life isotope (T=1.59 x 10{sup 7} yr). Since a combined external and internal oxidation of the zircaloy cladding tube occurs during the reactor processing, iodine diffusion parameters in zirconia are needed. In order to obtain these data, stable iodine atoms were first introduced by ion implantation into zirconia with an energy of 200 keV and a dose equal to 8 x 10{sup 15} at cm{sup -2}. Diffusion profiles were measured using 3 MeV alpha-particle Rutherford backscattering spectrometry at each step of the annealing procedure between 700 C and 900 C. In such experiments a reduced iodine concentration was observed, which correlated to a diffusion-like process. Similar analysis has been performed using ...
1998-03-01
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
Energy Technology Data Exchange (ETDEWEB)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation loop were observed from ...
2004-11-15
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
International Nuclear Information System (INIS)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and dislocation loop were observed from the ...
2004-11-01
Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon
Energy Technology Data Exchange (ETDEWEB)
Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and ...
1996-09-01
Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon
International Nuclear Information System (INIS)
Ion implantation of Si (60 keV, 1x10"1"4/cm"2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1x10"1"8 and 1x10"1"9/cm"3. Following post-implantation annealing at 740 degree C for 15 min to allow agglomeration of the available interstitials into elongated #left brace#311#right brace# defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in #left brace#311#right brace# defects as a function of boron concentration, up to nearly complete disappearance of the #left brace#311#right brace# defects at boron concentrations of 1x10"1"9/cm"3. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and implications for transient-enhanced ...
International Nuclear Information System (INIS)
The inelastic energy losses for single collisions of Xe"+ ions with Xe targets have been measured for incident ion energies from 0.3 to 1.2 MeV and for scattering angles from 3"0 to 20"0. The energy losses were found to range from 1 to 11 keV with distinct steps at distances of closest approach of 0.22 and 0.12 A. By comparing these data with earlier ionization data by the same authors these steps are shown to be caused by M-shell excitation. Other excitations observed in the ionization data may be attributed to N-shell excitation. The distances of closest approach at which these excitations occur agree well with calculations by Eichler and Wille and co-workers, giving further evidence of the usefulness of Fano and Lichten's one-electron molecular model and these calculations.
Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
Energy Technology Data Exchange (ETDEWEB)
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.
2004-02-01
Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
International Nuclear Information System (INIS)
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.
2004-02-01
Boron transient enhanced diffusion in heavily phosphorus doped silicon
Energy Technology Data Exchange (ETDEWEB)
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
1997-11-01
Energy Technology Data Exchange (ETDEWEB)
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. ...
1996-01-01
International Nuclear Information System (INIS)
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5x10"1"3 cm"-"2 Si into (001)Si, followed by a high temperature (815 degree C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the open-quote open-quote+1 close-quote close-quote model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. copyright 1996 American Institute ...
Energy Technology Data Exchange (ETDEWEB)
Craters were produced in the surface of a Pt-specimen by plasma discharge. Using a Focussed Ion Beam (FIB), TEM-foils of the cross section of the craters were prepared in order to examine the microstructural changes occurring as a result of the discharge impact. The molten material pushed to the edge of the craters was able to be identified. The grains beneath the craters reached the surface of the crater by a mechanism of epitaxial growth. (orig.)
2005-11-01
Separation of Pu-238 and Pu-242 from irradiated Am-241
International Nuclear Information System (INIS)
... americium 241 americium 242 daughter products ion exchange chromatography isotope ratio neutron beams plutonium 238 plutonium 242 ... Authors Watanabe, Kenju; Sagawa, Chiaki; Ueno, Kaoru (Japan Atomic Energy Research Inst., Tokai, Ibaraki. Tokai Research Establishment)
Reflective diffraction grating
Energy Technology Data Exchange (ETDEWEB)
Reflective diffraction grating. A focused ion beam (FIB) micromilling apparatus is used to store color images in a durable medium by milling away portions of the surface of the medium to produce a reflective diffraction grating with blazed pits. The images are retrieved by exposing the surface of the grating to polychromatic light from a particular incident bearing and observing the light reflected by the surface from specified reception bearing.
2003-06-24
Plan-view transmission electron microscopy of crack tips in bulk materials
Energy Technology Data Exchange (ETDEWEB)
A focused ion beam (FIB) system has been applied to prepare a thin foil specimen of Si, MgO and alumina which contained cracks in the plan of foil. It was possible to observe a much larger area at and near a crack tip than has been hitherto possible. FIB was also applied to observation of microstructure near a crack tip evolved during severe rolling contact fatigue in a steel.
1996-12-01
Luminosity Upgrade of CLIC LHC ep/gp Collider
An energy frontier or QCD Explorer ep and collider can be realized by colliding high-energy photons generated by Compton backscattered off a CLIC electron beam, at either 75 GeV or 1.5 TeV, with protons or ions stored in the LHC. In this study we discuss a performance optimization of this type of collider by tailoring the parameters of both CLIC and LHC. An estimate of the ultimately achievable luminosity is given.
2007-01-01
How to decorate FIB cross sections using plasma etch for SEM observation
Energy Technology Data Exchange (ETDEWEB)
The Focused-Ion-Beam (FIB) is a powerful tool for fast, precision cross-sectioning and inspection of submicron defects in multilayered integrated circuit devices. However, the low contrast between the layers in FIB cross-sections can make the feature of interest difficult to observe, which has become a limitation for FIB cross-sectioning. A technique using plasma etch to decorate the FIB cross-sections has proven to be a simple solution to overcome this limitation.
1995-12-31
Halflives of rp-Process Waiting Point Nuclei
Energy Technology Data Exchange (ETDEWEB)
The fragment separator at GSI, Darmstadt, has been used to produce and separate very proton rich nuclei in the {sup 100}Sn region. By fragmentation of a {sup 112}Sn beam at 1 A{center_dot}GeV we produced nuclei along the rp-process path between {sup 77}Y and {sup 98}In. By implanting these ions into a silicon detector stack we were able to determine their halflives. Preliminary data are presented.
1999-12-31
Fouling Study of Silicon Oxide Pores Exposed to Tap Water
Energy Technology Data Exchange (ETDEWEB)
We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.
2007-07-12
A 3D tomographic EBSD analysis of a CVD diamond thin film
Energy Technology Data Exchange (ETDEWEB)
We have studied the nucleation and growth processes in a chemical vapor deposition (CVD) diamond film using a tomographic electron backscattering diffraction method (3D EBSD). The approach is based on the combination of a focused ion beam (FIB) unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.
2008-09-15
International Nuclear Information System (INIS)
Although low-energy ion radiation has been proven to have a wide range of biological effects and led to fruitful achievements as a new mutagenic source for genetic modification, there still exist some disputes about its mutagenic mechanisms because of its short-penetrating property. In present research, Arabidopsis thaliana transgenic for GUS recombination substrate was used to evaluate the genomic instability induced by irradiations of alpha particle (3.3MeV) and Low-energy-Argon ion (30 KeV). A pronounced effects of alpha particle irradiation to Arabidopsis thaliana seedlings and Argon ion irradiation to seeds on the somatic homologous recombination frequency (sHRF) were reported. The sHRFs increased 1.88-fold and 2.42-fold, respectively, which indicated that the short-penetrating radiation could effectively induce the plant genomic instability in either dry seeds or seedlings with active metabolism. ...
2008-08-12
Modification of the passivity of iron based alloys through ion implantation
International Nuclear Information System (INIS)
As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 stainless. Electrochemical experiments were carried out to ...
1764-01-01
High-frequency electrostatic waves near Earth's bow shock
International Nuclear Information System (INIS)
Electrostatic wave measurements from the Active Magnetospheric Particle Tracer Explorer Ion Release Module have been used to investigate the wave modes and their possible generation mechanisms in the Earth's bow shock and magnetosheath. It is demonstrated that electrostatic waves are present in the bow shock and magnetosheath with frequencies above the maximum frequency for Doppler-shifted ion acoustic waves, yet below the plasma frequency. Waves in this frequency range are tentatively identified as electron beam mode waves. Data from 45 bow shock crossings are then used to investigate possible correlations between the electrostatic wave properties and the near-shock plasma parameters. The most significant relationships found are anticorrelations with Alfven Mach number and electron beta. Mechanisms which might produce electron beams in the shock and magnetosheath are discussed in terms of the ...
Evaluation of tritium diffusion through the Neutral Beam Injector calorimeter panel
Energy Technology Data Exchange (ETDEWEB)
The Neutral Beam Test Facility (NBTF) to be realized in Padoa will test the Neutral Beam Injection (NBI), one of the Heating and Current Drive Systems foreseen for ITER. The NBI is based on the acceleration of hydrogen or deuterium negative ions up to 1 MeV. This work has been aimed at assessing the tritium release from the NBTF in order to provide data for the safety analysis. In particular, the diffusion of the tritium through the neutral beam target material (the CuCrZr alloy calorimeter panels) has been assessed by using literature data of the diffusion coefficient. The tritium generated inside the calorimeter panels moves into both the vacuum and water side: the tritium diffusion flux has been evaluated during the beam-on (200 deg. C) and the beam-off (20 deg. C) phases of the NBTF experiments consisting of an interim campaign and a final test. The ...
2009-06-15
Evaluation of tritium diffusion through the Neutral Beam Injector calorimeter panel
International Nuclear Information System (INIS)
The Neutral Beam Test Facility (NBTF) to be realized in Padoa will test the Neutral Beam Injection (NBI), one of the Heating and Current Drive Systems foreseen for ITER. The NBI is based on the acceleration of hydrogen or deuterium negative ions up to 1 MeV. This work has been aimed at assessing the tritium release from the NBTF in order to provide data for the safety analysis. In particular, the diffusion of the tritium through the neutral beam target material (the CuCrZr alloy calorimeter panels) has been assessed by using literature data of the diffusion coefficient. The tritium generated inside the calorimeter panels moves into both the vacuum and water side: the tritium diffusion flux has been evaluated during the beam-on (200 deg. C) and the beam-off (20 deg. C) phases of the NBTF experiments consisting of an interim campaign and a final test. The ...
2009-06-01
Radiation-enhanced diffusion in amorphous Pd-Cu-Si
Energy Technology Data Exchange (ETDEWEB)
Diffusion during He/sup +/, Ne/sup +/, and Xe/sup +/ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu/sub 6/Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the diffusion-saturation level is ...
1988-11-01
Radiation-enhanced diffusion in amorphous Pd-Cu-Si
International Nuclear Information System (INIS)
Diffusion during He"+, Ne"+, and Xe"+ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu_6Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the diffusion-saturation level is similar to that of the ...
Focused ion beam lithography for rapid prototyping of metallic films
International Nuclear Information System (INIS)
We present FIB-lithography methods for rapid and cost-effective prototyping of metal structures covering the deep-submicron- to the millimeter-range in a single lithography cycle. Focused ion beam (FIB) systems are widely used in semiconductor industry and research facilities for both analytical testing and prototyping. A typical application is to apply electrical contact to micron-sized sensors/particles by FIB induced metal deposition. However, as for E-beam lithography, patterning times for large area bonding pads are unacceptably long, resulting in cost-intensive prototyping. In this work, we optimized FIB lithography processing for negative and positive imaging mode to form metallic structures for large-areas down do the sub-100 nm range. For negative lithography features are defined by implanting Ga"+-ions into a commercial photo resist, without affecting the underlying structures by impinging ...
2010-03-21
A study of palladium silicide formed by focused ion beam implantation of palladium ions
The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di ...
1989-01-01
A study of palladium silicide formed by focused ion beam implantation of palladium ions
International Nuclear Information System (INIS)
The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly ...
X-ray zone plate fabrication using a focused ion beam
Energy Technology Data Exchange (ETDEWEB)
An x-ray zone plate was fabricated using the novel approach of focused ion beam (FIB) milling. The FIB technique was developed in recent years, it has been successfully used for transmission electron microscopy (TEM) sample preparation, lithographic mask repair, and failure analysis of semiconductor devices. During FIB milling, material is removed by the physical sputtering action of ion bombardment. The sputter yield is high enough to remove a substantial amount of material, therefore FIB can perform a direct patterning with submicron accuracy. The authors succeeded in fabricating an x-ray phase zone plate using the Micrion 9500HT FIB station, which has a 50 kV Ga{sup +} column. Circular Fresnel zones were milled in a 1.0-{micro}m-thick TaSiN film deposited on a silicon wafer. The outermost zone width of the zone plate is 170 nm at a radius of 60 {micro}m. An achieved aspect ratio was 6:1.
2000-08-16
The DITE (Divertor Injection Tokamak Experiment) program has been undertaken to demonstrate the feasibility of impurity control by the use of a diverter in an injection-heated toroidal plasma configuration. Rather than behaving in accordance with neoclassical toroidal containment theory, the plasma is subject to various instabilities, particularly the resistive fluid MHD types, follows the empirical scaling of energy confinement time with plasma parameters observed in other plasma devices. DITE experiments have, however, extended the range of current and density. Impurities arising from plasma interactions with the vacuum vessel surface are controlled by the bundle divertor, which diverts a portion of plasma and power in the plasma scrape-off layer into a separate target chamber where impurities can be removed. Auxiliary plasma heating is provided by the injection of powerful beams of neutral hydrogen atoms produced by multi-aperture ion ...
1981-04-01
P-LIGA: 3D-integration of microstructures with curved surfaces by deep ion irradiation
International Nuclear Information System (INIS)
Using the advantage that the projected range of ions in matter is sharply limited, a new technique for the production of three-dimensional microstructures has been developed. Based on the P-LIGA technique (Proton-Lithographie, Galvanoformung, Abformung) this process allows the generation of structures with surfaces of almost any shape having a root mean square roughness of about #lambda#/50 for visible light wavelengths. An ion beam with diameters between 2 and 50 #mu#m is directly writing the structures and the shape is varied by geometrical manipulation of the sample in three axes during the exposure. Practically, structures have been written using protons with an energy of 1.8 MeV in a provisional experimental setup with beam diameters of 10 and 50 #mu#m, respectively. After irradiation, the parts exposed were dissolved in a liquid developer without affecting the nonirradiated parts. The shape and ...
1998-04-01
Micromachining using a focused ion beam miller
International Nuclear Information System (INIS)
Full text: The focused ion beam (FIB) miller is becoming well established as a machine for the structural analysis of materials and for the rapid preparation of transmission electron microscope specimens. It has also been used for some time in the semiconducting materials industry for the analysis, repair and redesign of device materials. However, one emerging technique is the use of the FIB for micromachining. The FIB software can also be used to manufacture and machine components. This process can occur through converting software, typically in the form of bitmaps or TIF files, to proprietary 'stream' files. These files allow, often complex, patterns to be generated and milled into the specimen and thus the generation of micro-electromechanical systems. Frequently, this involves largely two-dimensional patterns and structures, however, more complex patterns and file types can be generated which allow, for example, device prototyping or the ...
2002-02-01
Effects of the insertion of a thick sp"2 buffer layer on the adhesion of cBN-rich film
International Nuclear Information System (INIS)
A method was proposed and examined to deposit thick cubic boron nitride (cBN)-rich layer of good adhesion to silicon substrate. The method combined (i) the insertion of a thick sp"2 buffer layer, and (ii) the use of an appropriate assist ion beam energy for the growth of the cBN-rich top layer. The sp"2-bonded boron nitride buffer layer was deposited under irradiation of ions with energies in the range of 200-360 eV. The buffer layer was found to contain curled graphitic basal planes, and so was supposed to be relatively deformable, and facilitate the relaxation of stresses in the cBN-rich top layer. The ion assist introduced during the growth of the cBN-rich layer was supposed to both create and annihilate defects, and so resulted in the generation and relaxation of internal stresses. Results showed that the insertion of a 492 nm sp"2 buffer layer, and the use of a beam energy of ...
2004-05-01
Effects of multi-ion irradiation on microstructural changes in lithium titanate
Energy Technology Data Exchange (ETDEWEB)
The irradiation behavior of Li{sub 2}TiO{sub 3} under a fusion reactor environment was simulated by simultaneous irradiation of Li{sub 2}TiO{sub 3} by the triple ion beams and the respective single ion beams of O{sup 2+}, He{sup +} and H{sup +}. The microstructural changes in Li{sub 2}TiO{sub 3} caused by the irradiation were measured by FT-IR photoacoustic spectroscopy. The results suggest that the amount of TiO{sub 2} formed is proportional to the dpa and that the method of irradiation does not affect the dependence of formation of TiO{sub 2}. On the other hand, the amount of defects and/or radiolytic products generated by irradiation, which is considered to trap hydrogen near the surface, is found to be affected by the method of irradiation. Such phenomena are believed to affect the tritium release behavior from Li{sub 2}TiO{sub 3}, and durability of Li{sub 2}TiO{sub 3} and compatibility of Li{sub ...
2009-04-30
Effects of multi-ion irradiation on microstructural changes in lithium titanate
International Nuclear Information System (INIS)
The irradiation behavior of Li_2TiO_3 under a fusion reactor environment was simulated by simultaneous irradiation of Li_2TiO_3 by the triple ion beams and the respective single ion beams of O"2"+, He"+ and H"+. The microstructural changes in Li_2TiO_3 caused by the irradiation were measured by FT-IR photoacoustic spectroscopy. The results suggest that the amount of TiO_2 formed is proportional to the dpa and that the method of irradiation does not affect the dependence of formation of TiO_2. On the other hand, the amount of defects and/or radiolytic products generated by irradiation, which is considered to trap hydrogen near the surface, is found to be affected by the method of irradiation. Such phenomena are believed to affect the tritium release behavior from Li_2TiO_3, and durability of Li_2TiO_3 and compatibility of Li_2TiO_3 with other components of the breeder blanket such as structural materials ...
2009-04-30
Aspects of Stability Related to the Colliding Beam Fusion = Reactor
Recent experiments with TFTR, D-III-D and JET involving the injection and trapping of low density beams of high energy large orbit ions indicate that large orbit non-adiabatic ions slow down and diffuse classically in the presence of anomalous fluctuations and transport of adiabatic majority particles. Accordingly, we consider conceptual fusion reactors(N. Rostoker, M.W. Binderbauer and H.J. Monkhorst, Science) 278, 1419 (1997). based on classical confinement of fuel ions and fusion products(M.W. Binderbauer and N. Rostoker, J. Plasma Phys.) 56, 451 (1996).. The magnetic confinement geometry of the proposed designs is a Field Reversed Configuration. A survey of experimental results on instabilities and their characteristics as related to these reactor concepts is presented. Particular focus will be given to long wavelength (as compared to gyro-radius) and low frequency (?<< c/r_o, r_o=3D major ...
1998-11-01
Energy Technology Data Exchange (ETDEWEB)
The results presented here demonstrate that the Paul Trap Simulator Experiment (PTSX) simulates the propagation of intense charged particle beams over distances of many kilometers through magnetic alternating-gradient (AG) transport systems by making use of the similarity between the transverse dynamics of particles in the two systems. Plasmas have been trapped that correspond to normalized intensity parameters s = wp2 (0)/2wq2 * 0.8, where wp(r) is the plasmas frequency and wq is the average transverse focusing frequency in the smooth-focusing approximation. The measured root-mean-squared (RMS) radius of the beam is consistent with a model, equally applicable to both PTSX and AG systems that balances the average inward confining force against the outward pressure-gradient and space-charge forces. The PTSX device confines one-component cesium ion plasmas for hundreds of milliseconds, which is equivalent to over 10 km of ...
2004-01-29
Website Policies and Important Links Comments
WorldWideScience.org is maintained by the U.S. Department of Energy's
Office of Scientific and Technical Information as the Operating Agent
for the WorldWideScience Alliance.
