A chemically assisted micro-beam etching system for 3D microanalysis was designed. Using chemically assisted ion beam etching (CAIBE) method with FIB shave-off scanning, about several hundred micrometers clean cross-section will be acquired in a few hours. We use focused ion beam (FIB) and electron beam (EB) as micro-beams, halogen or halide mainly as reactive gases. The apparatus was manufactured based on this concept. We found that the FIB, Q-MS and SED worked as expected. The instrumentation has been completed.
Intensities of {gamma}-transitions emerging from the EC decay of {sup 203}Pb were measured precisely. The obtained relative {gamma}-intensities are 100%(279.2keV), 4.14+-0.08%(401.3keV) and 0.932+-0.022%(680.5keV). The 279.2 and 680.5keV level feeding {beta}-branching ratios were deduced to be 95.3+-0.1 and 4.7+-0.1% respectively. {sup 203}Pb is suggested for calibration purposes. (author).
Nov 14, 2009 ... Ring Current electrons from the Fok Ring Current Model are computed using plasma and magnetic field values from the SWMF magnetosphere ...
Nov 14, 2009 ... Ring Current electrons from the Fok Ring Current Model are computed using plasma and magnetic field values from the SWMF magnetosphere ...
Nov 14, 2009 ... Ring Current electrons from the Fok Ring Current Model are computed using plasma and magnetic field values from the SWMF magnetosphere ...
Neutral atom beams with energies above 200 keV may be required for various purposes in magnetic fusion devices following TFTR, JET and MFTF-B. These beams can be produced much more efficiently by electron detachment from negative ion beams than by electron capture by positive ions. We have investigated the efficiency with which such neutral atoms can be produced by electron detachment in partially ionized hydrogen plasma neutralizers.
A semi-empirical relation which can be used to determine the total attenuation cross sections of samples containing H, C, N and O in the energy range 145-1332 keV has been derived based on the total attenuation cross sections of several sugars, amino acids and fatty acids. The cross sections have been measured by performing transmission experiments in a narrow beam good geometry set-up by employing a high-resolution hyperpure germanium detector at seven energies of biological importance such as 145.4 keV, 279.2 keV, 514 keV, 661.6 keV, 1115.5 keV, 1173.2 keV and 1332.1 keV. The semi-empirical relation can reproduce the experimental values within 1-2%. The total attenuation cross sections of five elements carbon, aluminium, titanium, copper and zirconium measured in the same experimental set-up at the energies mentioned ...
The process of inelastic scattering of hot plasma electrons with energies upto 3 keV by a pair of close-lying nuclear levels (..delta../ital E/less than or equal to2keV), one of whichis isomeric, is discussed. The transition cross sections in the nuclei/sup 242/Am, /sup 171/Lu, and /sup 73/Se are calculated. Estimates of the numberof isomeric nuclei de-excited as a result of electron-stimulated processes in aplasma with parameters characteristic of present-day experiments in controlledthermonuclear fusion are given.
The magnetic #beta#-spectrometer of the #pi# #sq root#2 type with 0.07% pulse resolution is used to measure the intensities of interval conversion electrons on L- and M-subshells of 70.45 keV "1"7"7 Ta gamma-transition. The results are analyzed and the values of mixing parameter #sigma#(E2/M1) and penetration parameter #lambda# are obtained.
A discussion is presented of the 750-KeV chopper experience with both proton and negative ion beams and the ability of these systems to tailor the Linac beam to the diverse requirements of its users; normal accelerator injection, neutron therapy beam, and electron cooling experiments. This flexibility plus a cleaner beam pulse, improved thyratron operation, and mechanical modularity are the results of recent improvements. Additional benefits have been increased reliability and ease of service to the 750-KeV chopper. 3 refs.
The essential mechanical and electronic parts of a beam pulsing system are described, which reaches an energy resolution of ..delta..E/E=0.1%-0.4% in the energy range from 100 eV and 10 keV.
Full text of publication follows: Large-scale problems such as nuclear waste disposal are increasingly recognized to be interconnected to small scale-mechanisms. Thus, synchrotron-based high-resolution analytical X-ray probes become important tools for exploring the micro-scale chemical reactivity of heterogeneous barrier materials used in nuclear waste repositories. In this study the layout of the micro-XAS beamline at the Swiss Light Source (SLS) will be presented. The beamline is optimized towards microbeam experiments ({approx}1 x 1 {mu}m{sup 2}) in the hard-X-ray regime (4 - {approx}22 keV) and allows to combine micro X-ray fluorescence (micro-XRF), micro X-ray absorption spectroscopy (micro- XAS), and micro X-ray diffraction (micro-XRD) investigations with radioactive samples. Furthermore, the potential of micro-XRF/XAS/XRD for acquiring spatially resolved molecular level information on the speciation and structural ...
Measurements of the double-electron-capture process in which a positive ion of iodine becomes a negative ion in a single collision with a magnesium atom are reported between 20 and 90 keV. The cross section is comparable to that for the rare gases and not as large as might be expected from a two-valence-electron atom. This process is probably insignificant in the production of negative ion beams using a magnesium-vapor target.
The feasibility of a high-energy electron cooling device has been studied through tests on a prototype of the electron device. The apparatus consists of a pulsed ((20-60) keV, 2#mu#s) electron gun, a drift region 1 m long and of a depressed collector for recovering the electron energy. Tests on beam optics and energy recovery have been performed, a high-energy recovery efficiency has been attained. Experimental results are discussed in this paper.
We study the characteristics of cyclotron wave-particle interaction in a typical hydrogen plasma. The numerical calculations of minimum resonant energy Emin, resonant wave frequency ?, and pitch angle diffusion coefficient D?? for interactions between R-mode/L-mode and electrons/protons are presented. It is found that Emin decreases with ? for R-mode/electron, L-mode/proton and L-mode/electron interactions, but increase with ? for R-mode/proton interaction. It is shown that both R-mode and L-mode waves can efficiently scatter energetic (10 keV-100 keV) electrons and protons and cause precipitation loss at L=4, indicating that perhaps wave-particle interaction is a serious candidate for the ring current decay. (authors)
The peak flux relationship between hard X-rays and microwaves from solar flares is studied using about 400 events simultaneously recorded with the hard X-ray burst spectrometer on the SMM satellite and the Nobeyama 17 GHz radiometer. The data indicate that the hard X-ray and microwave peak fluxes correlate best for X-ray energies of less than about 80 keV for impulsive flares and greater than about 360 keV for extended flares. By postulating that electrons responsible for microwave emission at 17 GHz are those emitting hard X-rays at these photon energies, it is concluded that: (1) in impulsive flares, microwaves at about 20 GHz are emitted mainly by electrons of less than about 200 keV from a layer through which the electrons stream down into the thick-target hard X-ray source; and (2) in extended flares, microwaves are emitted mainly by MeV ...
An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
Rossi X-ray Timing Explorer (RXTE) observations of the bright supernova remnant Cas A have revealed a hard power law component above 10 keV in addition to two thermal components inferred from ASCA measurements of the many line centroids from low-Z elements. The power law can be shown to be consistent with synchrotron emission from radio to hard x-rays by electrons of up to 4 x 10"1"3 eV. Measurement of the 1157 keV line by CGRO from "4"4Sc in the chain of decay of "4"4Ti predicts that the two "4"4Ti lines at 68 and 78 keV should appear at the CGRO intensity. RXTE has placed upper limits on such lines that are marginally consistent with the CGRO measurement. Implications of these results on sites for cosmic ray acceleration and nucleosynthesis are discussed.
The MCNPE-BO and MCNP4 Monte Carlo electron-photon codes were used to calculate the dose equivalent per unit fluence at various depths in tissue-equivalent slab phantoms for broad parallel beams of monoenergetic electrons with energies from 50 keV to 10 MeV. The study was carried out in the framework of the activities of a ICRP/ICRU Joint Task Group with the support of EURADOS WG4 (Numerical Dosimetry). Some preliminary results and comparisons as well as a general discussion on the performances of the codes are presented, demonstrating quite a satisfactory agreement among the results obtained using the two codes and those of other authors. (author).
The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10[sup -15] cm[sup 2] in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, the emission factors for negative-ion beam are found to be larger by 1 than those for ...
The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10"-"1"5 cm"2 in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, the emission factors for negative-ion beam are found to be larger by 1 than those for positive-ion ...
Several different aspects of the influence of the target backing on in-beam electron spectra following compound nuclear reactions induced by accelerated ions at tandem energies irradiating backed targets are discussed in detail. This discussion is illustrated by a few typical examples, such as "1"2C"5"+ and "3"1P"1"0"+ beams at 4 MeV/u bombarding Sn(+Be), Sn(+Au), Pb(+C) backed targets. Moreover, the relative influence of electron backscattering, electron Doppler shift and Doppler broadening as well as #delta#-electron emission on the low energy electron spectra (E_e#<=#100 keV) obtained under such conditions are investigated in the frame of the available experimental data. (orig.).
The measurements of the K X-ray intensity ratio I(K{sub {beta}})/I(K{sub {alpha}}) for the 17 elements Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Rb, Sr, Y, Zr, Nb and Mo have been done following ionization by 59.5keV {gamma}-rays from a {sup 241}Am point source. Ratios of emission probabilities of Auger electrons and the vacancy transfer coefficients have been extracted in terms of the intensity ratios. It is found that the present results agree well with earlier fitted values and the semi-empirical values.
The decays of Ta/sup 177/ and Lu/sup 177/ to levels in vestigated with beta spectrometers, NaI(Tl) gamma spectrometers, and fast coincidence and angular correlation techniques. Energy levels in Hf/sup 177/ were characterized according to their energy (kev), the Nilsson asymptotic quantum numbers (Nn/sub 2/ LAMBDA ), the total angular momentum and its component along the symmetry axis (I,K), and the parity ( pi ) as follows: 0STA5I4 7/2, 7/2-!; 112.97STA514 9/2, 7/ 2-!; 249.7STA5I4 11/2, 7/1-!; 32l.34STA624 9/2, 9/2+1; 447.9STA624 11/2, 585.8STA642 7/2, 3/2+1; 509.0STA5I2 5/2, 5/1-1; 605.5STA512 7/2, 5/2-!; 746.04STA633 7/2, 7/2+1; 848.2STA 633 9/2, 7/2+1; and 1058.38STA503 7/2, 7/2-!. The levels at 447.9, 488.8, and 585.8 kev are tentative. The spins and parities were uniquely determined by angular correlation and internal conversion data for the levels at 746.0 and 848.2 kev, asof the levels at 0, ...
The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keVelectron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within #approx#3 #mu#m. The Ga incorporation by dual beam ...
Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.
Chemical effects on the intensity ratio of LX-ray of molybdenum compounds irradiated by 11-keVelectrons and by 3-MeV protons were studied using an x-ray crystal spectrometer. It was found that the intensity ratios of L_#gamma#_1/L_#beta#_1 markedly decrease with the increase of ionicity of molybdenum compounds, except for the case of metallic molybdenum. (author).
The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.
Localized beam-processed areas using chemical reactions induced by a 30 keV Ga"+ focused ion beam (FIB) with and without I_2 (etching) and (CH_3)_3CH_3C_5H_5Pt gases (Pt deposition) have been analyzed using a 300 keV Be"2"+ microprobe with a beam spot size of 50-80 nm. The analyzed results have been compared with energy dispersive X-ray (EDX) analysis using an electron beam. The EDX analysis only indicated incorporated impurities at high fluence such as Ga, Pt and C, while microprobe RBS analysis could detect residual iodine with low concentration which couldn't be detected by EDS analysis because of the lower sensitivity of the EDX analysis for heavy atoms.
The optical emission of excited H reflected from clean Cu(110) after impingement of H/sup +/ and H/sub 2//sup +/ in the energy range of 250 eV to 20 keV per nucleon at 70/sup 0/ angle of incidence to the surface normal was measured. For incident 10 keV H/sub 2//sup +/, the highest excited hydrogen state detected was the n=10 level. The Hsub(..cap alpha..) yield was found to be fluence and energy dependent. This effect is attributed either to fast sputtered hydrogen, surface roughness or to an increase with hydrogen concentration in electron states of p-like symmetry near the Fermi level of copper. The Hsub(..cap alpha..) yield per reflected nucleon shows approximately an exponential dependence on both projectile energy per nucleon and scattered particle reciprocal velocity perpendicular to the surface.
The optical emission of excited H reflected from clean Cu(110) after impingement of H"+ and H_2"+ in the energy range of 250 eV to 20 keV per nucleon at 70"0 angle of incidence to the surface normal was measured. For incident 10 keV H_2"+, the highest excited hydrogen state detected was the n=10 level. The Hsub(#alpha#) yield was found to be fluence and energy dependent. This effect is attributed either to fast sputtered hydrogen, surface roughness or to an increase with hydrogen concentration in electron states of p-like symmetry near the Fermi level of copper. The Hsub(#alpha#) yield per reflected nucleon shows approximately an exponential dependence on both projectile energy per nucleon and scattered particle reciprocal velocity perpendicular to the surface. (orig.).
The formation of porous structures of nanometre size (nanoporous structures) on germanium (Ge) surfaces by focused ion beam (FIB) irradiations was investigated using various FIB conditions such as ion species, irradiation energies, total fluences, fluence rates, and incident angles. FIB-irradiated regions were observed using a scanning electron microscope and an atomic force microscope. It is found that, using a focused Ga ion beam (Ga FIB) at an energy of 100 keV, the irradiated Ge surface swelled up to ion fluence of 2 x 10"1"7 cm"-"2 with nanoporous structures and then was etched for larger fluences. The shape of swollen nanoporous structures depended on the fluence rate and the incident angle of the Ga FIB. However, such porous structures were observed neither for low-energy (15-30 keV) FIB irradiations using Si and Au ions nor for high-energy (200 keV), heavy ion (Au) irradiation. These ...
Kbeta-to-Kalpha X-ray intensity ratios of Ti and Ni have been measured in pure metals and in alloys of Ti(x)Ni(1-x) (x=0.7, 0.6, 0.5, 0.4 and 0.3) following excitation by 22.69 keV X-rays from a 10 mCi (109)Cd radioactive point source. The valence-electron configurations of these metals were determined by corporation of measured Kbeta-to-Kalpha X-ray intensity ratios with the results of multiconfiguration Dirac-Fock calculation for various valence-electron configurations. Valence-electron configurations of 3d-transition metals in alloys indicate significant differences with respect to the pure metals. Our analysis indicates that these differences arise from delocalization and/or charge transfer phenomena in alloys. Namely, the observed change of the valence-electron configurations of metals in alloys can be explained with the transfer of 3d electrons from one ...
K?-to-K? X-ray intensity ratios of Ti and Ni have been measured in pure metals and in alloys of TixNi1-x (x=0.7, 0.6, 0.5, 0.4 and 0.3) following excitation by 22.69 keV X-rays from a 10 mCi 109Cd radioactive point source. The valence-electron configurations of these metals were determined by corporation of measured K?-to-K? X-ray intensity ratios with the results of multiconfiguration Dirac-Fock calculation for various valence-electron configurations. Valence-electron configurations of 3d-transition metals in alloys indicate significant differences with respect to the pure metals. Our analysis indicates that these differences arise from delocalization and/or charge transfer phenomena in alloys. Namely, the observed change of the valence-electron configurations of metals in alloys can be explained with the transfer of 3d electrons from one element to the other ...
A two module electron beam source operating over a wide range of output parameters has been designed and fabricated to be used in conjunction with a pair of electron beam sustained CO_2 lasers. Each module comprised a grid-controlled thermionic electron beam gun including a compact grid pulser for control of the electron beam, a 250 kV thyratron switched modulator for acceleration of the electron beam, a 1 kHz filament heater and a complex computerized control system. The system was designed to reliably produce 45 #mu#s wide electron pulses of 150-200 keV energy, operate at repetition rates of 1-10 pps and current densities of 5-20 mA/cm"2. Additional parameters are listed. The high voltage cathode assembly employs 132 thoriated tungsten filaments distributed over the area of the 250 cm x 10 cm output window. The cathode assembly including ...
Among the investigations conducted on the space shuttle flight STS 3 March 1982 was an experiment in which a 1-keV, 100-mA electron gun was pulsed at 3.25 and 4.87 kHz. The resultant waves were measured with a broadband plasma wave receiver. At the time of flight the experimental setup was unique in that the electron beam was square wave modulated and that the shuttle offered relatively long times for in situ measurements of the ionospheric plasma response to the VLF pulsing sequences. In addition to electromagnetic response at the pulsing frequencies the waves exhibited various spectral harmonics as well as the unexpected occurrence of satellite lines around those harmonics. Both phenomena occurred with a variety of different characteristics for different pulsing sequences.
This paper reports measurements of absolute differential cross sections for electron capture and loss for fast hydrogen atoms incident on H_2, N_2, O_2, Ar, and He. Cross sections have been determined in the 2.0- to 5.0-keV energy range over the laboratory angular range 0.02 degree--2 degree, with an angular resolution of 0.02 degree. The high angular resolution allows us to observe structure at small angles in some of the cross sections. Comparison of the present results with those of other authors generally shows very good agreement.
For very low collision energies electron capture from excited hydrogen by multicharged ions is characterized by enormous cross sections, the predicted maximum being comparable to the geometric size of the Rydberg atom. The ion-atom merged-beams technique is being used to study these collisions for the variety of charge states and the wide range of energies (0.1 to 1000 eV/amu) accessible to the apparatus. A neutral D beam containing a Rydberg atom population proportional to 1/n"3 is produced by collisional electron detachment of 8 keV D"- in N_2 gas. An applied electric field results in the range (n=24--11) depending on the strength of the field applied. This beam is then merged with O"3"+ or O"5"+ ion beams at low relative collision velocities where the resultant beam-beam signal of D"+ due to electron loss is dominated by electron capture. From the sharp decrease in the observed ...
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle texture, while the impurity concentration and resisitivity are minimum. The correlation between the structural, compositional and ...
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between the structural, ...
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between the structural, ...
A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...
A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...
These experiments were performed on the Isocele separator, on-line with the Orsay synchrocyclotron; thulium isotopes were produced by bombarding natural erbium targets with 150nA beam of 157MeV protons. Two Ge(Li) detectors, with resolution of 2.3 and 2.5keV at 1332keV used for #gamma#-ray measurements; conversion electron spectra were measured using a Si(Li) detector. #gamma# spectra, #gamma#-#gamma# coincidence and conversion electron measurements were sufficient to build the flow energy level schemes of the transitional "1"5"8Er and "1"5"6Er nuclei. On both nuclei several quasi rotational bands have been identified. These results are compared with other even erbium isotopes and with the neighboring N=88 and 90 isotones. Comparisons with predictions issued from some classical models are also performed: "1"5"8Er appears as a deformed nucleus very similar to "1"6"0Er and "1"6"2Er; on the other hand ...
The penetration depth and concentration distribution for vanadium ions with low energy implanted into the dry peanut seeds is determined by scanning electron microscope and X-ray energy dispersion spectrometer. The results show that the depth-concentration distribution is a Gaussian distribution with a long tail and the maximum penetration depth is about 13.6 #mu#m for V"+ with 200 keV in cotyledon of the peanut. The experimental result of the implanted V"+ range in the peanut seeds is compared with the calculating value of the TRIM95
Recent results of the experiments at GOL-3 facility are presented. Plasma with a density of 1014...1016 cm-3 is confined in a 12-meter-long solenoid, which comprises 55 corrugation cells with mirror ratio Bmax/B min=4.8/3.2 T. The plasma is heated up to 2...4 keV temperature by a high power relativistic electron beam (?1 MeV, ? 330 kA, ?8?s, ?120 kJ) injected through one of the ends. Mechanism of experimentally observed fast ion heating, issued of plasma stability and confinement are discussed.
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
The development of high energy (> 150 keV) neutral beams for heating and fueling magnetic fusion devices depends on the ability to produce well-collimated negative ion beams. The double capture charge-exchange technique is a known, scalable method. In order to maximize the overall efficiency of the process and to achieve the desired beam characteristics, it is necessary to examine the optical qualities of the beams as well as the total efficiency of beam production. A combined modeling and experimental study of the angular scattering effects in negative ion formation and loss processes has therefore been undertaken.
An experimental investigation was made of the ..gamma..-transitions feeding or de-exciting the 1355 keV isomeric state in /sup 177/Ta. The E2/M1 mixing ratios for the 311 keV interband transition from the isomer and for the 271 keV and the 295 keV intraband transitions within the rotational band on the isomer were determined to be delta = 0.29sup(+0.11)sub(-0.06), 0.25sup(+0.05)sub(-0.03) and 0.30sup(+0.06)sub(-0.08), respectively, employing combined measurements of the linear polarization and angular distribution of the ..gamma..-ray with the aid of conversion electron measurements. Spin and parity assignments of the isomer were confirmed to be 21/2/sup -/. The half-life of the isomer was remeasured to be Tsub(1/2) = 5.0 +- 0.2 ..mu..s and the magnetic moment was found to be ..mu.. = 0.080 +- 0.014 ..mu..sub(N). The gsub(K) and gsub(R) factors for the band on the isomer were ...
An experimental investigation was made of the #gamma#-transitions feeding or de-exciting the 1355 keV isomeric state in "1"7"7Ta. The E2/M1 mixing ratios for the 311 keV interband transition from the isomer and for the 271 keV and the 295 keV intraband transitions within the rotational band on the isomer were determined to be delta = 0.29sup(+0.11)sub(-0.06), 0.25sup(+0.05)sub(-0.03) and 0.30sup(+0.06)sub(-0.08), respectively, employing combined measurements of the linear polarization and angular distribution of the #gamma#-ray with the aid of conversion electron measurements. Spin and parity assignments of the isomer were confirmed to be 21/2"-. The half-life of the isomer was remeasured to be Tsub(1/2) = 5.0 +- 0.2 #mu#s and the magnetic moment was found to be #mu# = 0.080 +- 0.014 #mu#sub(N). The gsub(K) and gsub(R) factors for the band on the isomer were deduced separately to be ...
The emission of the plerion G21.5-0.9 appears more extended in X rays than in radio. This is an unexpected result because it would imply that short-lived X-ray electrons may reach distances even larger than radio electrons. Applying an empirical relationship between dust scattering optical depth and photoelectric column density, the measured column density leads to a large optical depth at 1 keV, of about 1. Therefore we investigate the hypothesis that the detected halo be an effect of dust scattering, re-analyzing an Cal/PV XMM-Newton observation of G21.5-0.9 and critically examining it in terms of a dust scattering model. We also present a spectral analysis of a prominent extended feature in the northern sector of the halo.
Three electronic personal dosimeters (EPD-N) manufactured by Siemens, serial numbers 0635, 0658, and 0683, were tested at the Radiation Calibration Laboratory for an evaluation of their response to neutron, gamma and x-ray radiation. Designed to provide real-time neutron and photon dosimetry, the EPD-N is capable of estimating and displaying neutron and gamma dose components separately for a range of energies from 50 keV to 7 MeV for photon and 0.025 eV to > 10 MeV for neutron. All tests were conducted using the factory calibrations. A technical representative of the manufacturer indicated that site-specific calibrations are required as factory settings are calibrated for the lowest neutron energy limit of 0.025 eV. This raises concerns about the reliability of these devices in measuring neutrons when calibrations are made for a specific site radiological characterization then used at another site.
Isotropic Compton profiles of TaC and TaN have been measured for the first time, at an intermediate resolution, using 662 keV #gamma#-radiation. Energy bands, density of states and Fermi surface topology of TaC and TaN have been computed using linear combination of atomic orbitals with density functional theory and full potential linearised augmented plane wave method. Both band structure calculations predict the metallic character of TaC and TaN. The electron momentum densities calculated using various approaches of density functional theory are compared with the present measurements. On the basis of Mulliken's population, it is also seen that TaC has more covalent bonding than TaN. The optical properties computed using full potential linearised augmented plane wave method are explained in terms of intraband transitions.
Much theoretical and experimental efforts have been expended in recent years to study those atomic processes which are specially relevant to understanding high temperature laboratory plasmas. For magnetically confined fusion plasmas, the temperature range of interest spans from the hundreds of eV at plasma edges to 10 keV at the center of the plasma, where most of the impurity ions are nearly fully ionized. These highly stripped ions interact strongly with electrons in the plasma, leading to further excitation and ionization of the ions, as well as electron capture. Radiations are emitted during these processes, which easily escape to plasma container walls, thus cooling the plasma. One of the dominant modes of radiation emission has been identified with dielectronic recombination. This paper reviews this work.
A new principle of particle trapping in the simple spherical cavity using both electric and magnetic components of radiofrequency electromagnetic field is proposed. The electric component of H {sub 12} oscillating mode drives the fast particle oscillations, while the magnetic component synchronously bends the trajectories to the cavity center. A specially developed theory of particle stability predicts dense and energetic electron cluster in the trap. Numerical simulations of particle dynamics in the complete electromagnetic field taking into account both space charge and particle-induced magnetic field are in good agreement with the analytic results, giving a density of 2.6*10{sup 1} electrons/cm{sup 3} and an average kinetic energy of around 30 keV at an operating frequency of 3 GHz. Being used at lower frequency, spherical cavity can trap protons and heavier ions too, but with lower density and kinetic energy.
The alloying of steel surface with aluminum (Al) using Microsecond-pulsed Intense Electron Beams (MIEB-Al) was developed and optimized in order to be used for improving the corrosion resistance of the 316, 1.4970 and T91 steels, exposed to liquid Pb and Pb-Bi-eutectic. The procedure consists in two steps: (i) coating the steel surface with Al or an Al-containing alloy layer and (ii) melting the coating layer and the steel surface layer using intense pulsed electron beam. In order to cover the steel surface with an homogeneous and crack-free Al-alloyed layer, the following experimental conditions are required: Al coating thickness range 5-10mm, electron kinetic energy 120keV; pulse duration 30ms; energy density 40-45J/cm2; number of pulses 2-3. Using the mentioned procedure, the corrosion r...
Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results ...
The fission cross section of /SUP 242m/ Am has been measured from 0.005 eV to 20 MeV using time-of-flight techniques at the Oak Ridge Electron Linear Accelerator. A hemispherical plate fission ionization chamber with five pairs of plates contained three deposits totaling 507 ..mu..g of /SUP 242m/ Am, one deposit of 168 ..mu..g /sup 235/U, and a ''weightless'' deposit of /sup 252/Cf, which served as a monitor of chamber performance. The fission of /sup 235/U, served as the cross-section standard for energies above 101 keV while /sup 6/Li(n,..cap alpha..), normalized to /sup 235/U fission in the 7.8- to 11.0-eV interval, served as a shape standard below 101 keV. Approximately 360 h of data were obtained at a flight path distance of 9.1 m, primarily with 40-ns bursts. Particular attention was paid to correction of backgrounds, especially inscattered-neutron-induced events. The fission ...
The fission cross section of /SUP 242m/ Am has been measured from 0.005 eV to 20 MeV using time-of-flight techniques at the Oak Ridge Electron Linear Accelerator. A hemispherical plate fission ionization chamber with five pairs of plates contained three deposits totaling 507 #mu#g of /SUP 242m/ Am, one deposit of 168 #mu#g "2"3"5U, and a ''weightless'' deposit of "2"5"2Cf, which served as a monitor of chamber performance. The fission of "2"3"5U, served as the cross-section standard for energies above 101 keV while "6Li(n,#alpha#), normalized to "2"3"5U fission in the 7.8- to 11.0-eV interval, served as a shape standard below 101 keV. Approximately 360 h of data were obtained at a flight path distance of 9.1 m, primarily with 40-ns bursts. Particular attention was paid to correction of backgrounds, especially inscattered-neutron-induced events. The fission resonance integral was found to be 1800 + or - 65 b.
The energy resolution of small NaI(Tl), CsI(Tl), BGO, GSO, YAP and LSO crystals has been studied using 16 mm diameter large area avalanche photodiodes (LAAPD) and a 52 mm diameter photomultiplier. The best result of 4.8% for 662 keV #gamma#-rays from a "1"3"7Cs source was obtained with a 9 mm in diameter by 9 mm high CsI(Tl) scintillator coupled to an LAAPD. Measuring the number of primary electron-hole pairs produced in the LAAPD and photoelectrons in the photomultiplier, as well as the noise contribution of the LAAPD, allowed a quantitative discussion of the results. The energy resolutions measured with LAAPDs are comparable to, or significantly better (at certain emission wavelengths) than, those obtained with the photomultiplier. At energies above 100 keV the energy resolution measured with the majority of crystals and the LAAPD was weakly affected by the photodiode noise contribution. The advantages and limitations of ...
In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a ...
In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative Ostwald ripening ...
This paper reports measurements of absolute differential cross sections for the direct scattering of oxygen atoms by He, Ne, Ar, Kr, Xe, H_2, N_2, O_2, CO, CO_2, H_2O, SO_2, NH_3, CH_4, CF_4, and SF_6 targets. The measured cross sections include contributions from all elastic and inelastic processes that result in a fast neutral oxygen atom product. Cross sections are presented for 0.5- and 1.5-keV projectile energies over the laboratory angular range 0.2 degree endash 5 degree. When compared in the center-of-mass reference frame, these cross sections exhibit a high degree of similarity in both amplitude and angular dependence. The cross sections for N_2, CO, CO_2, and H_2O are inverted using a partial-wave analysis to yield empirical interaction potentials, which can then be used to extrapolate the measurements down to lower energies. Using these potentials, cross sections are evaluated at 0.1 keV. copyright 1996 The American Physical Society.
K{beta}-to-K{alpha} X-ray intensity ratios of Ti, Cr, Fe and Co in pure metals and in Cr{sub 0.26}Fe{sub 0.74}, Cr{sub 0.80}Co{sub 0.20} and Ti{sub 0.80}Cr{sub 0.20} alloys have been measured following excitation by 59.54 keV {gamma}-rays from a 7400 MBq (200 mCi) {sup 241}Am point-source. The valence electronic structure of Ti, Cr, Fe and Co in the samples have been evaluated by the comparison of the measured K{beta}-to-K{alpha} intensity ratios with the results of multiconfiguration Dirac-Fock calculations performed for various electronic configurations of these metals. The 3d-electron populations obtained for pure metallic Ti, Cr, Fe and Co agree well with the results of band structure calculations of Papaconstantopoulos (Handbook of band structure of elemental solids, Plenum Press, New York, 1986). Our analysis indicates significant increase of 3d-electron population of Ti, Cr ...
K#beta#-to-K#alpha# X-ray intensity ratios of Ti, Cr, Fe and Co in pure metals and in Cr_0_._2_6Fe_0_._7_4, Cr_0_._8_0Co_0_._2_0 and Ti_0_._8_0Cr_0_._2_0 alloys have been measured following excitation by 59.54 keV #gamma#-rays from a 7400 MBq (200 mCi) "2"4"1Am point-source. The valence electronic structure of Ti, Cr, Fe and Co in the samples have been evaluated by the comparison of the measured K#beta#-to-K#alpha# intensity ratios with the results of multiconfiguration Dirac-Fock calculations performed for various electronic configurations of these metals. The 3d-electron populations obtained for pure metallic Ti, Cr, Fe and Co agree well with the results of band structure calculations of Papaconstantopoulos (Handbook of band structure of elemental solids, Plenum Press, New York, 1986). Our analysis indicates significant increase of 3d-electron population of Ti, Cr and Fe in the ...
Measurements were carried out for calibration and performance testing of a set of 10 electronic personal dosimeters (EPDs) at the Secondary Standard Dosimetry Laboratory of Sudan. Calibrations were carried out at three X-ray beam qualities described in ISO standard 4037 in addition to 137Cs and 60Co gamma ray beams. The experimental was performed with EPDs mounted on ICRU Slab phantom. X-ray and ?-ray beams were characterized in terms of air kerma free-in-air which were converted to the known delivered personal dose equivalent, Hp(10) using appropriate the air kerma to personal dose equivalent conversion coefficients. Dosimeters tested showed excellent energy and angular response and relative error of indication within the recommended limit for photon energies from 65 keV to 1.25 MeV. The study showed encouraging results for using electronic dosimeters in personal dosimetry.
K{beta}-to-K{alpha} X-ray intensity ratios of Ti, V, Cr, and Co in pure metals and their disilicide compounds have been measured following excitation by 59.54 keV {gamma}-rays from a 200 mCi {sup 241}Am point-source. The K{beta}-to-K{alpha} intensity ratios of all these metals in the disilicide compounds are found to be less than the corresponding ratios for pure metals. Comparison of the measured K{beta}-to-K{alpha} intensity ratios for the disilicides and pure metals with the multiconfiguration Dirac-Fock calculations indicates increase of the 3d electron populations of Ti, V, Cr, and Co in the disilicides from their pure metal values suggesting the rearrangement of electrons between 3d and 4s states of the individual metal atom. This rearrangement is found to be opposite to that observed in our previously reported work on NiSi{sub 2} and CuSi{sub 2}.
K#beta#-to-K#alpha# X-ray intensity ratios of Ti, V, Cr, and Co in pure metals and their disilicide compounds have been measured following excitation by 59.54 keV #gamma#-rays from a 200 mCi "2"4"1Am point-source. The K#beta#-to-K#alpha# intensity ratios of all these metals in the disilicide compounds are found to be less than the corresponding ratios for pure metals. Comparison of the measured K#beta#-to-K#alpha# intensity ratios for the disilicides and pure metals with the multiconfiguration Dirac-Fock calculations indicates increase of the 3d electron populations of Ti, V, Cr, and Co in the disilicides from their pure metal values suggesting the rearrangement of electrons between 3d and 4s states of the individual metal atom. This rearrangement is found to be opposite to that observed in our previously reported work on NiSi_2 and CuSi_2.
A time-of-flight mass spectrometer has been constructed to measure the energy spectra of particles scattered by 10/sup 0/ with primary energies between 200 eV and 15 keV. The energy resolution ..delta..E/E of the system is between 0.1 and 0.4%. Energy spectra of scattered molecules and their dissociation products are shown for 570 eV H/sub 2//sup +/ and 4430 eV N/sub 2//sup +/ as projectiles. Electron capture into unbound states of the neutral molecule, with perhaps some contribution from mutual scattering within the molecule, appears to explain the observed dissociation product energy spectra peak widths.
A time-of-flight mass spectrometer has been constructed to measure the energy spectra of particles scattered by 10"0 with primary energies between 200 eV and 15 keV. The energy resolution #DELTA#E/E of the system is between 0.1 and 0.4%. Energy spectra of scattered molecules and their dissociation products are shown for 570 eV H_2"+ and 4430 eV N_2"+ as projectiles. Electron capture into unbound states of the neutral molecule, with perhaps some contribution from mutual scattering within the molecule, appears to explain the observed dissociation product energy spectra peak widths. (orig.).
Although the outer surface of single-walled carbon nanotubes (atomically thin cylinders of carbon) can be involved in a wide range of chemical reactions, it is generally thought that the interior surface of nanotubes is unreactive. In this study, we show that in the presence of catalytically active atoms of rhenium inserted into nanotubes, the nanotube sidewall can be engaged in chemical reactions from the inside. Aberration-corrected high-resolution transmission electron microscopy operated at 80?keV allows visualization of the formation of nanometre-sized hollow protrusions on the nanotube sidewall at the atomic level in real time at ambient temperature. Our direct observations and theoretical modelling demonstrate that the nanoprotrusions are formed in three stages: (i) metal-assisted d...
Making use of a lead slowing-down spectrometer coupled to a 46 MeV electron linear accelerator and a back-to-back type double fission chamber, the fission cross sections of Am-241, Am-242m and Am-243 have been measured relative to that of U-235 from 0.1 eV to 10 keV with the energy resolution of about 40 % full width at half maximum. Each of the measured result has been compared with (1) the evaluated nuclear data in ENDF/B-VI and JENDL-3.2, and (2) the existing experimental data, for which the evaluated and the experimental data were broadened by the energy resolution function of the spectrometer. (author)
Making use of a back-to-back type double fission chamber and a lead slowing-down spectrometer driven by a 46 MeV electron linear accelerator, the fission cross sections of Am-241, Am-242m and Am-243 have been measured relative to that of U-235 from 0.1 eV to 10 keV with the energy resolution of about 40 % full width at half maximum. Each of the measured result has been compared with (1) the evaluated nuclear data in ENDF/B-VI and JENDL-3.2, and (2) the existing experimental data, whose evaluated and measured data were broadened by the energy resolution function of the spectrometer.
Making use of a back-to-back type double fission chamber and a lead slowing-down spectrometer driven by a 46 MeV electron linear accelerator, the fission cross sections of Am-241, Am-242m and Am-243 have been measured relative to that of U-235 from 0.1 eV to 10 keV with the energy resolution of about 40% full width at half maximum. Each of the measured result has been compared with (1) the evaluated nuclear data in ENDF/B-VI and JENDL-3.2, and (2) the existing experimental data, whose evaluated and measured data were broadened by the energy resolution function of the spectrometer. (author)
Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.
A deep band of {l_brace}311{r_brace} defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the {l_brace}311{r_brace}-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The {l_brace}311{r_brace} defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the {l_brace}311{r_brace}-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.
A deep band of #left brace#311#right brace# defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the #left brace#311#right brace#-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The #left brace#311#right brace# defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the #left brace#311#right brace#-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.
Measurements of absolute differential cross sections for H"+-H_2 direct, single-, and double-charge-transfer scattering at 0.5, 1.5, and 5.0 keV are reported at laboratory scattering angles less than 1 degree with an angular resolution of approximately 0.02 degree. The cross sections exhibit deep interference oscillations in single-charge-transfer scattering, but no such oscillations are present in direct and double-charge-transfer scattering. Theoretical cross sections derived using the diatoms-in-molecules method to describe the molecular states in a semiclassical molecular-orbital three-state close-coupling model within a semiclassical framework agree satisfactorily with the experimental results.
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.
K{beta}-to-K{alpha} X-ray intensity ratios of Ti and Ni have been measured in pure metals and in alloys of Ti{sub x}Ni{sub 1-x} (x=0.7, 0.6, 0.5, 0.4 and 0.3) following excitation by 22.69 keV X-rays from a 10 mCi {sup 109}Cd radioactive point source. The valence-electron configurations of these metals were determined by corporation of measured K{beta}-to-K{alpha} X-ray intensity ratios with the results of multiconfiguration Dirac-Fock calculation for various valence-electron configurations. Valence-electron configurations of 3d-transition metals in alloys indicate significant differences with respect to the pure metals. Our analysis indicates that these differences arise from delocalization and/or charge transfer phenomena in alloys. Namely, the observed change of the valence-electron configurations of metals in alloys can be explained with the transfer of 3d ...
The authors report on observations of plasma wave turbulence generated during electron beam injections, spacecraft potential variations, and neutral gas emissions of the CHARGE 2 sounding rocket experiment. The payload was flown in a mother/daughter configuration, with the two sub-payloads electrically connected by an insulated, conducting tether. While tethered, the two platforms were separated, drifting apart in a direction perpendicular to both the magnetic field and to the spacecraft velocity, reaching a maximum distance of 426 m at the end of the flight. The mother carried a high-voltage (HV) system (0-460 V), biasing the mother negative relative to the daughter. The operation of the HV bias system simulated the motional emf induced in larger orbiting space structures like the Tethered Satellite System 1 (TSS 1) space shuttle mission scheduled for the spring of 1992. In addition, the mother carried an electron beam accelerator (1 ...
During the previous 9 months the major part of the Fusion-FEM has been constructed. The 2 MV Insulated Core Transformer, the electron gun, the accelerator, the focusing lenses and the undulator have been tested on-site. In the present - temporary - set-up, the electron beam line consists of a 12 A, 80 keV thermionic electron gun, a 2 MeV dc accelerator, beam transport optics, the undulator and a collector. The gun is mounted in the high voltage terminal, which is now at -2 MV, and the undulator and mm-wave system am at ground potential outside the SF{sub 6}-filled pressure tank. This so-called inverse set-up allows easy access to the larger part of the beam line, the undulator and the mm-wave system, which is important in the conditioning phase. The decelerator and depressed collector am not yet installed. The design of the electron beam line has been optimised using the GPS ...
In earlier works, the inelastic mean free path (IMFP) of electrons was determined by elastic peak electron spectroscopy (EPES) using Ni and Ag reference standard samples, but fully neglecting surface excitation. Surface excitation that is characterized by the surface excitation parameter (SEP), and may affect considerably the elastic peak for the sample and the reference material. The SEP parameters of selected conducting polymers (polythiophenes, polyaniline and polyethylene) were determined by EPES using Si and Ge reference samples. Experiments were made with a hemispherical analyzer of energy resolution 100-200 meV in the E = 0.2-2.0 keV energy range. The composition of the sample surfaces was determined by in situ XPS, their surface roughness by AFM. The experimental SEP parameter data of eight polymer samples were determined by our new procedure, using the formulae of Chen and Werner et al. in the E = 0.2-2.0 ...
A large negative ion source for JT-60U produces high current ion beam from a wide extraction area of 45 cm x 110 cm. On the other hand, a cross-sectional area of the negative ion based neutral beam (NNB) injection port on JT-60U is narrow, about 50 cm x 60 cm. In order to inject the neutral beam at a high geometric efficiency, i.e. to suppress beam loss in the beamline, it is necessary to steer the beam for both compensation of undesirable beam deflection in extractor and focusing of the beam. For the JT-60U, two methods are provided for the required beam steering. Among them the results of beam steering experiment by aperture displacement and the design study are summarized in the present report. The experiment was carried out with 400 keV negative ion source, which has the three stage accelerator of similar structure as the JT-60U ion source, at Negative Ion Acceleration Test Stand (NIAS). High energy negative ion beams of the same perveance as that of 500 ...
We proposed that a new type of the electrostatic microwiggler with a wiggler period (0.1 mm {le}1{sub w}{le}1 mm) and the wiggler field strength (E{sub w}{le} 100 kV/m) can be produced on the surface of a PZT when a high power and high frequency ultrasonic wave travels through a PZT bar. Numerical simulations in the linear and nonlinear gain regime show that a weak microwiggler (E{sub w}100 kV/m,{lambda}{sub w}{approx}100 periods), operating in magnetoresonance with a strong guide field (B{sub o}{approx} 3.6T), can generate a millimeter and submillimeter radiations with medium electronic efficiency of few percents. It is shown that the maximum output power of the compact FEL using the wiggler system generated on the surface of the piezoelectric material may be upto a few Watts with a relatively low energy and low current electron beam (Ew {approx}100 keV and I{sub b}1 mA).
High pressure xenon ionization chamber detectors are possible alternatives to traditional thallium doped sodium iodide (NaI(Tl)) and hyperpure germanium as gamma spectrometers in certain applications. Xenon detectors incorporating a Frisch grid exhibit energy resolutions comparable to cadmium/zinc/telluride (CZT) (e.g. 2% (at) 662keV) but with far greater sensitive volumes. The Frisch grid reduces the position dependence of the anode pulse risetimes, but it also increases the detector vibration sensitivity, anode capacitance, voltage requirements and mechanical complexity. We have been investigating the possibility of eliminating the grid electrode in high-pressure xenon detectors and preserving the high energy resolution using electronic risetime compensation methods. A two-electrode cylindrical high pressure xenon gamma detector coupled to time-to-amplitude conversion electronics was used to characterize the pulse rise ...
Design of the Alcator C-Mod Thomson scattering (TS) diagnostic is discussed and the results of the measurements are presented. The TS system has six spatial channels with observation volumes evenly distributed between the midplane and the edge of the plasma. Each channel is capable of measuring the electron density in the range N{sub e}=5{times}10{sup 19}{endash}5{times}10{sup 21} m{sup {minus}3} and temperature from T{sub e}=200 eV to 10 keV. A 30 Hz, 1.5 J per pulse Nd-YAG laser is employed allowing the measurements of evolution of T{sub e} and N{sub e} profiles during plasma shot. A laser beam position control and feedback system provides for the beam alignment stability and reliable electron density measurements. Examples of the core density and temperature profiles measured at different stages of the plasma evolution are discussed. {copyright} {ital 1999 American Institute of Physics.}
Free electron laser (FEL) facilities as the FELI FEL Facility are proposed, for which a 150-MeV linac type injector for a Saga synchrotron light source (SLS) is employed in FEL mode. The linac has two operating modes; short macropulse mode a 1 #mu#s at 150 MeV for injection to a 1 - 1.3-GeV third generation type storage ring and long macropulse mode of 12 #mu#s at 100 MeV for four FEL Facilities. The macropulse beam consists of a train of several ps, 0.6 nC microbunches (peak current 100 A) repeating at 89.25 MHz. We are aiming to supply high power level photon beams covering an attractive wavelength range from 0.05 nm (25 keV) to 200 #mu#m (0.006 eV) for scientific researches, bio-medical and industrial applications, using the Saga third generation type SLS with a superconducting wiggler and the proposed four FEL Facilities. (author)
The industrial radiation processing using low energy electron beam (EB) accelerators lower than 300 keV offers high speed, safe technologies for the chemical conversion of thin layer coatings. Because of the nonselective mode of initiating chain reaction polymerization involving free radicals in synthetic coating layers and suitable substrates, the EB curing of the coatings on woods and papers has particular advantage. Hungary decided to start an up-to-date EB line to process cement-bound (CB) wood chipboards with pigmented acrylic coatings. The CB wood chipboards contain more than 60 % of portland cement and up to 40 % of wood particles. They are produced as large boads of 6 - 16 mm thickness. In their fireproof character and other aspects, they are similar to asbestos-cement boards without containing carcinagenic asbestos, and are stable against moisture and atmospheric influences. EB-cured acrylate coating improved further those properties, ...
K#beta#-to-K#alpha# x-ray intensity ratios of Fe and Ni in pure metals and in Fe_xNi_1_-_x alloys (x=0.20, 0.50, 0.58) exhibiting similar crystalline structure have been measured following excitation by 59.54 keV #gamma# rays from a 200 mCi "2"4"1Am point source to understand why the properties of the Fe_xNi_1_-_x (x=0.2) alloy are distinct from other alloy compositions. The valence electronic structure of Fe and Ni in the samples has been evaluated by comparing the measured K#beta#-to-K#alpha# intensity ratios with the results of multiconfiguration Dirac-Fock calculations. Significant changes in the 3d electron population (with respect to the pure metal) are observed for Fe and Ni for certain alloy compositions. These changes can be explained by assuming rearrangement of electrons between 3d and (4s,4p) band states of the individual metal atoms. It has been found that the valence ...
The total interaction cross sections (#sigma#_t) of some sugars and amino acids and five elements: lithium, carbon, oxygen, aluminium and calcium have been measured for 6.4 keV, 13.95 keV, 14.4 keV, 17.74 keV, 24.14 keV, 30.8 keV, 35 keV, 59.54 keV, 81 keV, 122 keV and 136 keV photons in a narrow beam good geometry set up, by using high resolution detectors such as a Si-PIN diode detector and a high purity germanium detector. The #sigma#_t values have been used in a matrix method to evaluate the effective atomic numbers Z_e_f_f of the samples from their effective atomic cross sections #sigma#_a. The effective atomic cross section of a sample #sigma#_a is the total interaction cross section divided by the total number of atoms of all types in it. Further, a ...
The importance of cellular dosimetry in both diagnostic and therapeutic nuclear medicine is becoming increasingly recognized. Experimental range-energy relations for electrons and alpha particles, along with derived geometric reduction factors, are used to calculate cellular absorbed fractions for these radiations. The resulting absorbed fractions are employed to calculate cellular S-values for several radionuclides. Cellular absorbed fractions for monoenergetic electron sources with energies ranging from 0.1 keV to 1 MeV, distributed uniformly in the source region, are calculated for several target {l_arrow} source combinations including cell{l_arrow}cell, cell{l_arrow}cell surface, nucleus{l_arrow}nucleus, nucleus {l_arrow}cytoplasm and nucleus {l_arrow}cell surface. Similar data are also provided for monoenergetic alpha particle sources with energies ranging from 3 to 10 MeV. S-values are also conveniently tabulated for ...
Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. Variations in microstructure and hardness of irradiated specimens were studied using transmission electron ...
Fe{sub x}Zn{sub 1-x} alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K{beta}/K{alpha} x-ray intensity ratios of Zn and Fe in Fe{sub x}Zn{sub 1-x} thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi {sup 241}Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in Fe{sub x}Zn{sub 1-x} thin films for different values of x. The reason for this ...
FexZn1-x alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K?/K? x-ray intensity ratios of Zn and Fe in FexZn1-x thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi 241Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in FexZn1-x thin films for different values of x. The reason for this change may be that the electronegativity of iron is ...
The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological process to focus on the ...
The response of MOS capacitors to low- and medium-energy x-ray irradiation is investigated as a function of gate material (TaSi or Al), oxide thickness, and electric field. Measured device response is compared with predictions based on discrete ordinates and Monte Carlo code simulations of dose enhancement effects, coupled with recent estimates of electron-hole recombination in MOS oxides. In comparisons of 10-keV x-ray and Co-60 irradiations of Al-gate MOS capacitors at an oxide electric field of 1 MV/cm, it is found that predictions and experiments agree to within better than 20 percent for oxide thicknesses ranging from 35 to 1060 nm. For capacitors having TaSi/Al gates, predictions and experiments agree to within better than 30 percent at 1 MV/cm, with the largest differences occurring for 35-nm gate oxides. At other electric fields, the disagreement between experiment and prediction increases significantly for both Al- and TaSi/Al-gate ...
The response of MOS capacitors to low- and medium-energy x-ray irradiation is investigated as a function of gate material (TaSi or Al), oxide thickness, and electric field. Measured device response is compared with predictions based on discrete ordinates and Monte Carlo code simulations of dose enhancement effects, coupled with recent estimates of electron-hole recombination in MOS oxides. In comparisons of 10-keV x-ray and Co-60 irradiations of Al-gate MOS capacitors at an oxide electric field of 1 MV/cm, it is found that predictions and experiments agree to within better than 20 percent for oxide thicknesses ranging from 35 to 1060 nm. For capacitors having TaSi/Al gates, predictions and experiments agree to within better than 30 percent at 1 MV/cm, with the largest differences occurring for 35-nm gate oxides. At other electric fields, the disagreement between experiment and prediction increases significantly for both Al- and TaSi/Al-gate ...
The effect of anode length and operating gas pressure on the x-ray emission from a nitrogen-filling modified plasma focus device has been investigated. The time-resolved investigation of x ray was carried out by using a five-channel photodiode x-ray spectrometer. The maximum x-ray yield is seen to increase with the increase in the anode length from 110 to 125 mm. Further increase in the anode length to 130 mm causes the x-ray yields to decrease. The highest x-ray yield of 4.5 J into 4#pi# sr was found for 125 mm anode length, which is 0.2% of the input energy. The average x-ray photon energy was estimated by using half-value thickness method and found to be 8.4 keV. The electron temperature of the plasma was estimated to be around 3 keV by x-ray intensity ratio method. The space-resolved x-ray-emitting zones for all the anodes were captured by a pinhole-based x-ray imaging camera and the images were scanned for different ...
It is widely accepted that the prompt transient signal in the 10 keV - 10 GeV band from gamma-ray bursts (GRBs) arises from multiple shocks internal to the ultra-relativistic expansion. The detailed understanding of the dissipation and accompanying acceleration at these shocks is a currently topical subject. This paper explores the relationship between GRB prompt emission spectra and the electron (or ion) acceleration properties at the relativistic shocks that pertain to GRB models. The focus is on the array of possible high-energy power-law indices in accelerated populations, highlighting how spectra above 1 MeV can probe the field obliquity in GRB internal shocks, and the character of hydromagnetic turbulence in their environs. It is emphasized that diffusive shock acceleration theory generates no canonical spectrum at relativistic MHD discontinuities. This diversity is commensurate with the significant range of spectral indices discerned in ...
With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga{sup +} focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is expected to influence the magnetic properties of the patterned ...
With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga"+ focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is expected to influence the magnetic properties of the patterned ...
The nuclide "2"4"1Am decays by alpha emission to "2"3"7Np. Most of the decays (84.6%) populate the excited level of "2"3"7Np with energy of 59.54 keV. Digital coincidence counting was applied to standardize a solution of "2"4"1Am by alpha-gamma coincidence counting with efficiency extrapolation. Electronic discrimination was implemented with a pressurized proportional counter and the results were compared with two other independent techniques: Liquid scintillation counting using the logical sum of double coincidences in a TDCR array and defined solid angle counting taking into account activity inhomogeneity in the active deposit. The results show consistency between the three methods within a limit of a 0.3%. An ampoule of this solution will be sent to the International Reference System (SIR) during 2009. Uncertainties were analysed and compared in detail for the three applied methods.
Neutrino emission drives neutron star cooling for the first several hundreds of years after its birth. Given the low energy ($\\sim$ keV) nature of this process, one expects very few nonstandard particle physics contributions which could affect this rate. Requiring that any new physics contributions involve light degrees of freedom, one of the likely candidates which can affect the cooling process would be a nonzero magnetic moment for the neutrino. To illustrate, we compute the emission rate for neutrino pair bremsstrahlung in neutron-neutron scattering through photon-neutrino magnetic moment coupling. We also present analogous differential rates for neutrino scattering off nucleons and electrons that determine neutrino opacities in supernovae. Employing current upper bounds from collider experiments on the tau magnetic moment, we find that the neutrino emission rate can exceed the rate through neutral current electroweak interaction by a ...
The attenuation of gamma rays in some fatty acids, viz. formic acid (CH_2O_2), acetic acid (C_2H_4O_2), propionic acid (C_3H_6O_2), butyric acid (C_4H_8O_2), n-hexanoic acid (C_6H_1_2O_2), n-caprylic acid (C_8H_1_6O_2), lauric acid (C_1_2H_2_4O_2), myristic acid (C_1_4H_2_8O_2), palmitic acid (C_1_6H_3_2O_2), oleic acid (C_1_8H_3_4O_2) and stearic acid (C_1_8H_3_6O_2), has been measured at the photon energies 81, 356, 511, 662, 1173 and 1332 keV. Experimental values for the molar extinction coefficient, the effective atomic number and the electron density have been derived and compared with theoretical calculations. There is good agreement between experiment and theory.
Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail ...
M-shell X-rays of the rare-earth elements {sub 60}Nd, {sub 64}Gd, {sub 67}Ho and {sub 71}Lu were measured for lithium ion bombardment in the energy range 1.0-6.0 MeV. The M-shell X-rays with energies of 0.978-1.631 keV were detected with a LINK analytical detector. The efficiency of the detector was determined by using the known atomic-field bremsstrahlung cross-sections from low energy electron beams and K-shell X-ray measurements with light projectiles. The measured cross-sections are compared to the predictions of the first Born approximation and the ECPSSR (energy loss and Coulomb deflection effects, perturbed stationary state approximation with relativistic correction) theories. The best theoretical description of the present data is given by the ECPSSR theory, even though the discrepancy between data and theory is increasing at higher projectile energies.
Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and ...
Ion implantation of Si (60 keV, 1x10"1"4/cm"2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1x10"1"8 and 1x10"1"9/cm"3. Following post-implantation annealing at 740 degree C for 15 min to allow agglomeration of the available interstitials into elongated #left brace#311#right brace# defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in #left brace#311#right brace# defects as a function of boron concentration, up to nearly complete disappearance of the #left brace#311#right brace# defects at boron concentrations of 1x10"1"9/cm"3. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and implications for transient-enhanced ...
The inelastic energy losses for single collisions of Xe"+ ions with Xe targets have been measured for incident ion energies from 0.3 to 1.2 MeV and for scattering angles from 3"0 to 20"0. The energy losses were found to range from 1 to 11 keV with distinct steps at distances of closest approach of 0.22 and 0.12 A. By comparing these data with earlier ionization data by the same authors these steps are shown to be caused by M-shell excitation. Other excitations observed in the ionization data may be attributed to N-shell excitation. The distances of closest approach at which these excitations occur agree well with calculations by Eichler and Wille and co-workers, giving further evidence of the usefulness of Fano and Lichten's one-electron molecular model and these calculations.
The transport properties of a 'thin' polycrystalline diamond film are analyzed after the sample exposure to 8.06-keV x-ray radiation. Structure and morphology of the as-grown film have been evaluated by Raman, x-ray diffraction, and scanning electron microscopy techniques. The transport properties have been investigated by measuring dark current-voltage characteristics in the temperature range of 60 to 360 K. Ohmic transport has been evidenced on the as-grown film up to 1.16x10"5 V/cm. After irradiation, nonlinear contributions to the dark current have been evidenced and related to field-assisted thermal ionization of traps. Below 200 K, hopping mechanisms have been observed. Correlations have been found among x-ray irradiation, density of traps involved in the transport processes, and the nonhomogeneous nature of the sample. A simple model of the grain boundary structure is proposed to explain the observations.
For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force ...
A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of approx 1nA and a ...
We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the different processes involved which lead to the FIB induced deposition.
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. ...
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5x10"1"3 cm"-"2 Si into (001)Si, followed by a high temperature (815 degree C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the open-quote open-quote+1 close-quote close-quote model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. copyright 1996 American Institute ...
One of the refinements of modern Nuclear Medicine is the capacity of providing dynamic and kinetics images of the administered radiopharmaceutical, reproducing its transport mechanism, action sites, receptor binding and excretion route. With the continues technological advances new radiopharmaceuticals have been developed in order to express higher specificity and with higher characters of affinity between receptor/complex. One radiopharmaceutical is formed by a reagent or bio molecule that has in its structure a radioisotope, that has the objectives of carrying it to the organs of affinity or to benign or malign tumoral process. Somatostatin inhibits the growing and proliferation of several tumoral cells. Somatostatin analogs bind to somatostatic receptors that are expressed in different kind of neoplasia DOTA-LANREOTIDE (DOTALAN) is an octapeptide analog to somatostatin. The interest of labeling the bio conjugate with gallium-67 in Nuclear Medicine comes from its physical, chemical ...
Recent two major topics of Large Helical Device (LHD) towards fusion relevant conditions, high-density operation and high-ion-temperature operation, are reported. Super dense core plasma was obtained by the combination of repetitive hydrogen ice pellet injection and high power neutral beam injection (NBI) heating. A very peaked density profile with the highest central density of 1.1x1021 m-3 was produced showing that the particle transport was suppressed very well in the plasma core. The spatial density varies as the position of magnetic axis (Rax), and the steepest profile is obtained at Rax=3.95 m. The highest central ion temperature of 5.6 keV was obtained in hydrogen plasma at electron density of 1.6 x 1019 m-3 by NBI, where a peaked ion-temperature profile with internal ion energy transport barrier was observed. The profile of electron temperature did not change much and was broad even when the ion temperature had a ...
Active galactic nuclei (AGNs) and quasars (QSOs) appear to emit roughly equal energy per decade from radio to gamma-ray energies (e.g. Ramaty and Ligenfelter 1982). This argues strongly for a nonthermal radiation mechanism (see Rees 1984). In addition, statistical studies have indicated that the spectra of these objects in the IR-UV and 2 to 50 keV x-ray band, can be fitted very well with power laws of specific indices. These spectral indices do not seem to depend on the luminosity or morphology of the objects (Rothschild et al. 1983; Malkan 1984), and any theory should account for them in a basic and model independent way. If shocks accelerate relativistic protons via the first-order Fermi mechanism (e.g. Axfor 1981), the radiating electrons can be produced as secondaries throughout the source by proton-proton (p-p) collisions and pion decay, thus eliminating Compton losses (Protheroe and Kazanas 1983). As shown by Kazanas (1984), if ...
The properties of the triplet of low-lying states in {sup 101}Mo have been studied through spectroscopy of the {gamma} radation following thermal neutron capture in {sup 100}Mo and {beta}-decay of {sup 101}Nb and through a measurement of the proton angular distributions in the {sup 100}Mo(d, p) reaction with 14 MeV deuteron energy. The half-lives of the 13.5 keV state and the 57.0 keV 5/2{sup +} state have been measured as 226(7) and 133(7) ns, respectively. These values and the quadrupole/dipole mixing ratios of the 13.5 keV and 43.5 keV transitions yield spin and parity 3/2{sup +} for the 13.5 keV level. The E2 components in the 13.5 (3/2{sup +}->1/2{sup +}) and 43.5 keV (5/2{sup +}->3/2{sup +}) transitions are {le} 8x10{sup -4} and 54(9)%, respectively. The possibility of an additional state near to the 57.0 keV level is discussed. ...
The properties of the triplet of low-lying states in "1"0"1Mo have been studied through spectroscopy of the #gamma# radation following thermal neutron capture in "1"0"0Mo and #beta#-decay of "1"0"1Nb and through a measurement of the proton angular distributions in the "1"0"0Mo(d, p) reaction with 14 MeV deuteron energy. The half-lives of the 13.5 keV state and the 57.0 keV 5/2"+ state have been measured as 226(7) and 133(7) ns, respectively. These values and the quadrupole/dipole mixing ratios of the 13.5 keV and 43.5 keV transitions yield spin and parity 3/2"+ for the 13.5 keV level. The E2 components in the 13.5 (3/2"+#->#1/2"+) and 43.5 keV (5/2"+#->#3/2"+) transitions are #<=# 8x10"-"4 and 54(9)%, respectively. The possibility of an additional state near to the 57.0 keV level is discussed. IBFM/PTQM calculations, taking into ...
The WAND (Waste Assay for Nonradioactive Disposal) system can scan thought-to-be-clean, low-density waste (mostly paper and plastics) to determine whether the levels of any contaminant radioactivity are low enough to justify their disposal in normal public landfills or similar facilities. Such a screening would allow probably at least half of the large volume of low-density waste now buried at high cost in LANL`s Rad Waste Landfill (Area G at Technical Area 54) to be disposed of elsewhere at a much lower cost. The WAND System consists of a well-shielded bank of six 5-in.-diam. phoswich scintillation detectors; a mechanical conveyor system that carries a 12-in.-wide layer of either shredded material or packets of paper sheets beneath the bank of detectors; the electronics needed to process the outputs of the detectors; and a small computer to control the whole system and to perform the data analysis. WAND system minimum detectable activities (MDAs) for point sources ...
Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in InAlP is attributed to the DX level found in the Al-containing ...
The previous 58Ni and 60Ni set of resonance parameters (ENDF/B-VII-0, JEFF-3, etc.) was based on the SAMMY analysis of Oak Ridge National Laboratory neutron transmission, scattering cross section and capture cross section measurements by C. M. Perey et al. The present results were obtained by adding to the SAMMY experimental data base the capture cross sections measured recently at the Oak Ridge Linear Electron Accelerator by Guber et al. and the Geel Electron Linear Accelerator very high-resolution neutron transmission measurements performed by Brusegan et al. A complete resonance parameter covariance matrix (RPCM) was obtained from the SAMMY analysis of the experimental database. The data sets were made consistent, when needed, by adjusting the neutron energy scales, the normalization coefficients, and the background corrections. The RPCM allows the calculation of the cross section uncertainties due mainly to statistical errors in the ...
The previous {sup 58}Ni and {sup 60}Ni set of resonance parameters (Endf/B7.O, Jeff-3, etc.) was based on the SAMMY analysis of Oak Ridge National Laboratory neutron transmission, scattering cross section and capture cross section measurements by C.M. Perey et al. The present results were obtained by adding to the SAMMY experimental database the capture cross sections measured recently at the Oak Ridge Linear Electron Accelerator by Guber et al. and the Geel Electron Linear Accelerator and very high-resolution neutron transmission measurements performed by Brusegan et al. A complete resonance parameter covariance matrix (RPCM) was obtained from the SAMMY analysis of the experimental database. The data sets were made consistent, when needed, by adjusting the neutron energy scales, the normalization coefficients, and the background corrections. The RPCM allows the calculation of the cross section uncertainties due mainly to statistical errors in ...
Evolution of rapid (?10 ns) Ohmic overheating of a microprotrusion on a surface in contact with a plasma by emission current is studied taking into account the energy carried by plasma ions and electrons, as well as Ohmic heating, emissive source of energy release (Nottingham effect), and heat removal due to heat conduction. Plasma parameters were considered in the range of n = 1014-1020 cm-3 and Te = 0.1 eV-10 keV. The threshold value of energy transferred to the surface from the plasma is found to be 200 MW/cm2; above this value, heating becomes explosive (namely, an increase in the temperature growth rate (?2T/?t2 > 0) and in passing current (?J/?t > 0) is observed in the final stage at T ? 104 K and j ? 108 A/cm2). In spite of the fact that Ohmic heating does not play any significant role for plasmas with a density lower than 10 18 cm-3 because the current is limited by the space charge of electrons, rapid ...
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct ...
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO_2 cover ...
During the last decade, new radiopharmaceutical have been introduced for brain imaging. The marked differences of these tracers in tissue specificity within the brain and their increasing use for diagnostic studies support the need for a more anthropomorphic model of the human brain and head. Brain and head models developed in the past have been only simplistic representations of this anatomic region. For example, the brain within the phantom of MIRD Pamphlet No. 5 Revised is modeled simply as a single ellipsoid of tissue With no differentiation of its internal structures. To address this need, the MIRD Committee established a Task Group in 1992 to construct a more detailed brain model to include the cerebral cortex, the white matter, the cerebellum, the thalamus, the caudate nucleus, the lentiform nucleus, the cerebral spinal fluid, the lateral ventricles, and the third ventricle. This brain model has been included within a slightly modified version of the head model developed by ...
During the last decade, new radiopharmaceutical have been introduced for brain imaging. The marked differences of these tracers in tissue specificity within the brain and their increasing use for diagnostic studies support the need for a more anthropomorphic model of the human brain and head. Brain and head models developed in the past have been only simplistic representations of this anatomic region. For example, the brain within the phantom of MIRD Pamphlet No. 5 Revised is modeled simply as a single ellipsoid of tissue With no differentiation of its internal structures. To address this need, the MIRD Committee established a Task Group in 1992 to construct a more detailed brain model to include the cerebral cortex, the white matter, the cerebellum, the thalamus, the caudate nucleus, the lentiform nucleus, the cerebral spinal fluid, the lateral ventricles, and the third ventricle. This brain model has been included within a slightly modified version of the head model developed by ...
The differential cross section measurements for /sup 241/Am, /sup 242m/Am and /sup 243/Am are reviewed in the energy range from 0.5 eV to 10 keV. Parameters extracted from resonance analysis, such as the neutron strength function, the average level spacing, the average capture and fission widths, are compared for the various measurements. The average capture and fission cross sections from 100 eV to 10 keV are directly compared. The status of the data set is discussed with suggestions for further measurements. 24 references.
Bremstrahlung Isochromat Spectroscopy (BIS). The XES spectra were collected using a Specs electron gun for the excitation and the XES 350 grating monochromator and channel plate system from Scienta as the photon detection. Spectra were collected in 'normal mode,' where the electron gun kinetic energy (KE) and the energy position of the center of the channel plate were both fixed and the energy distribution in the photon (hv) spectrum was derived from the intensities distributed across the channel plate detector in the energy dispersal direction. The polycrystalline Ce sample was oxidized by exposure to air at ambient pressures. After introduction to the ultra-high vacuum system, the oxidized sample was bombarded with Ar, to clean the topmost surface region and stabilize the surface and near surface regions. Although CeO{sub 2} would be the thermodynamically preferred composition in an oxygen rich environment, the combination ...
In 1999, the plasma parameters of reversed shear (RS) plasmas had been extended in 1) DT-equivalent fusion power gain Q_D_T"e"q - 0.5 (n_D(0)#tau#_ET_i(0) - 4x10"2"0 m"-"3#centre dot#keV#centre dot#s) for 0.8 s and 2) full non-inductive current drive with 80% of the bootstrap current fraction. Physics of the internal transport barriers (ITBs) in RS plasmas, including the energy transport and the formation of ITB, were extensively studied. A nearly full current drive (92% non-inductively) was obtained with negative ion based neutral beam (NNB) injection (360 keV, 3.4 MW) in a high #beta#_p H-mode plasma (I_p=1.5 MA, B_T=3.7 T, q_9_5=4.2) with high plasma performance (#beta#_N=2.4 and H_8_9=2.56). Rise in the central electron temperature (T_e - 9 keV) resulted in the current drive efficiency #eta#_C_D of NNB reached 1.3x10"1"9 A/W/m"2, the highest for the neutral beam current drive. As for the H-mode plasmas, decrease in the ...
The study aimed to determine the chemical effects on the K and L X-ray intensity ratios and the K and L X-ray production cross sections for gold compounds. The K shell fluorescence yields and L shell average yields were also investigated. The samples were excited by 59.5keV ?-rays from an 241Am annular radioactive source and 123.6keV ?-rays from a 57Co annular radioactive source. K and L X-rays emitted from samples were counted by an Ultra-LEGe detector with a resolution of 0.150keV at 5.9keV. The experimental values were compared with theoretical, the semi-empirical and other experimental values.
... In a HEAO 1 study of active galaxies, principally Seyfert 1s, in the 2, 165 keV energy range, Rothschild et al. ... As discussed by Rothschild et al. ...
A new generation of quasimonochromatic high-flux X-ray sources, based on the X-ray radiation produced through Compton scattering between an electron beam and a laser beam, is under development. One of the possible applications of this source is inline phase contrast mammography, based on the observation of the edge-enhancement effect that can be observed at the border of structures inside the breast in images produced using a partially or totally coherent X-ray beam. In this work we present the results of a set of simulations of inline phase contrast mammography using typical inverse Compton scattering sources parameters. The simulated sample was a tumour-like mass having spherical shape, diameter between 200 {mu}m and 5 mm, placed inside a breast-like matrix, 4 cm thick, and a standard composition of 50% glandular tissue and 50% adipose tissue. We discuss the minimum requirements for mammography using inverse Compton scattering sources and we discuss how the ...
Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of ...
Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms ...
Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ion dose of 3x10"1"3 ion/cm"2. High-resolution TEM showed a complex ...
Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N compositions as a controlled buffer at the interface. Significant relaxation of the film stress has been observed ...
A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess directly resulting from the extra implanted ion is shown to ...
The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is evident in the LT ...
The gamma-ray spectrum following neutron capture on /sup 87/Sr was measured at 3 neutron energies: E/sub n/ = thermal, 2 keV, and 24 keV. Gamma rays were detected in a three-crystal Ge(Li)-NaI-NaI pair spectrometer. Gamma-ray intensities deduced from these spectra by spectral unfolding are presented.
A radiometric method was elaborated for surface density determinations of the adhesive layer of plasters by radionuclide X-ray fluorescence using the 17.47 keV bremsstrahlung of "1"4"7Pm/Mo. The bremsstrahlung line excites the 8.63 keV characteristic K#alpha# line of Zn contained in the adhesive layer of the plaster as a filling material in the form of ZnO. In homogeneous adhesive layers the Zn content is proportional to surface density. (author).
A technique has been developed for high resolution alpha particle spectroscopy from track length determination in CR-39 plastic. On individual tracks an energy resolution deltaE close to the range straggling limit is obtainable. For 6 MeV alpha-particle deltaE is proportional 35 keV on individual particles and for groups of particles deltaE proportional 20 keV can be achieved using certain data selection criteria. At 100 keV on individual particles deltaE is proportional 20 keV. The analysis requires 1) a knowledge of the track-etch rate (Vsub(T))-range relationship and 2) a theoretical understanding of alpha-particle track structure in CR-39 as a function of particle energy, dip angle and degree of etching. The structure of alpha-particle etched tracks in CR-39 is described and two methods of analysis discussed. Examples are given of the resolution attainable on tracks of alpha-particles as natural ...
TlGaSe_2 compound belongs to group of layered semiconductors of A"3B"3C_2"6-type. Photoelectric and optical properties of TlGaSe_2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe_2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe_2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K_#sigma# characterising X-ray sensitivity of investigated crystals are determined as the relative ...
We have shown that energy contamination introduced by ion beam deceleration technology that is used to increase the beam currents available for low energy boron implants, can affect fabricated junctions adversely. A 4 keV "1"1B beam is extracted and retarded by a potential of -3.5 keV for 0.5 keV "1"1B implantation, or by a potential of -3.8 keV for 0.2 keV "1"1B implantation. Intentional beam contamination was introduced by turning off the retarding potential to allow the 4 keV "1"1B ions to irradiate Si wafers directly. The percentage of contamination, at levels of 0.1%, 0.2% and 0.3% was introduced. Rapid thermal annealing of all the implanted samples was performed under N_2 ambient at 1050 deg. C for 1 s. The dopant tail profiles themselves are not significant if the contamination levels are low. However, the much higher damage level coming from high energy ...
The absolute cross sections of "2"3Na(p,n)"2"3Mg, "2"7Al(p,n)"2"7Si and "3"0Si(#alpha#,n)"3"3S reactions were measured in the incident energy range of 5.05 to 5.80, 5.80 to 6.25 and 3.975 to 6.235 MeV respectively using a spherically shaped 4#pi# neutron detector. In the energy range 5.80 to 7.80 and 6.235 to 11.30 MeV the absolute cross sections of "2"3Na(p,n)"2"3Mg and "3"0Si-(#alpha#,n)"3"3S reactions were determined by optical model calculations. The cross sections of the inverse reactions "2"3Mg(n,p)"2"3Na and "3"3S(n,#alpha#)"3"0Si were also calculated by the same method for the neutron energy range of 10 keV to 7.50 MeV for each reaction. The cross section of the latter reaction in the neutron energy range of 10 keV to 840 keV was also determined from its inverse reaction "3"0Si(#alpha#,n)"3"3S by the application of the detailed balance theorem. The reactions for which the cross sections were determined are of ...
The operation of the negative ion based NBI system for JT-60U has been progressed since 1996. Most of the efforts in the operation for increasing beam power and energy have been concentrated to get over the troubles, caused by surge energy at the moment of the accelerator break-down, in the ion sources and high voltage power supplies. The ion source for the N-NBI, so far, has accelerated negative ion beams of 14.3 A at 380 keV with deuterium and 18.5 A at 360 keV with hydrogen against the target of 22 A. The neutral beam power injected into JT-60U has already reached 5.2 MW at 350 keV for 0.7 sec with deuterium. (author)
A 500 keV negative-ion based NBI system is under construction for NB current drive and plasma core heating in high density plasma in JT-60U. Part of the beamline and the high voltage power supply required for a verification test of an ion source was completed in March 1995. After having done a high potential test of the power supply, the negative-ion generation and acceleration tests started in June 1995 aiming at deuterium beams of 500 keV, 22A. In initial experiment, deuterium negative-ion beams of 410 keV, 6.1A (2.5 MW) for 0.2 sec, so far, have been achieved. This is the world highest D{sup {minus}} current and negative ion beam power. The construction of the total system will be completed by the beginning of 1996, and the beam injection will start in March 1996.
The half-value thicknesses, linear and mass attenuation coefficients of biological samples such as bone, muscle, fat and water have been measured at 140, 364 and 662keV ?-ray energies by using the ATOMLABTM-930 medical spectrometer. The ?-rays were obtained from 99mTc, 131I and 137Cs ?-ray point sources. Also theoretical calculations have been performed in order to obtain the half-value thicknesses and, mass and linear attenuation coefficients at photon energies 0.001keV-20MeV for bone, muscle and water samples. The calculated value and the experimental results of this work and the other results in literature are found to be in good agreement.
Neutron capture ..gamma..-ray spectra have been measured at 11 average neutron energies from 10 to 530 keV in /sup 88/Sr using a 20 x 15 cm NaI detector with time-of-flight discrimination of background events. The partial radiation widths and the calculated partial valence widths are compared for the strong p-wave resonances at 287 and 321 keV and found to be highly correlated. At these energies, the spectra are dominated by strong transitions to low-lying single particle states, in confirmation of the role of valence capture in the 3p region. However, the data do not support this mechanism at <508> keV.
Neutron capture #gamma#-ray spectra have been measured at 11 average neutron energies from 10 to 530 keV in /sup 88/Sr using a 20 x 15 cm NaI detector with time-of-flight discrimination of background events. The partial radiation widths and the calculated partial valence widths are compared for the strong p-wave resonances at 287 and 321 keV and found to be highly correlated. At these energies, the spectra are dominated by strong transitions to low-lying single particle states, in confirmation of the role of valence capture in the 3p region. However, the data do not support this mechanism at <508> keV.
as for direct energy conversion in specialized direct electrical energy conversion plants. Figure 1. An energetic (~163KeV) proton and a 11boron nucleus fuse ...
The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. According to the coincidence data, the decay scheme was modified. The positions of 221.80, 318.00, 377.90, 452.50, 515.42, 1011.05 and 1759.72 keV transitions have been arranged again, the transition positions of 104.70, 105.95 and 774.15 keV gamma-rays have been assigned for the first time, the positions of 169.00, 590.91, 980.52 and 1431.68 keV transitions have been reconfirmed, the 1508.01 keV gamma-ray was observed simultaneously for the first time and its transition position has been assigned. The #beta#-intensities and the values of log ft of most levels were calculated. (author)
several authors tried to drive codes to construct nuclear level scheme of nuclei using a set of measured gamma -ray transitions and known energy levels, Ritz combination principle proved to be useful in constructing a more complete decay scheme. In this thesis the energy level schemes of some nuclei have been investigated by the measurements of the gamma - ray energies and use of Ritz combination code. The nuclei under investigation are "110m Ag (253 d)"110 Cd and "166m Ho (1200 yr) "166 E r. On the basis of the suggested level at 2249.02 keV by the Ritz code new positions of the two gamma-ray transitions at 677.5 and 706.6 KeV are found in decay scheme of "110m Ag. Also by this code, new position for the 994.84 KeV gamma-ray transition were established to depopulate the level at 1075.2 KeV.
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 ...
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute ...
We have developed a novel technique for measurements of low energy (p,alpha) reactions using heavy ion beams and a differentially-pumped windowless gas target. We applied this new approach to study the 183 keV resonance in the 17O(p,alpha)14}N reaction. We report a resonance energy (center-of-mass) of 183.5{+0.1}{-0.4} keV, a resonance strength of 1.70 +/- 0.15 meV, and set an upper limit (95\\% confidence) on the total width of the state of < 0.1 keV. This resonance is important for the 17O(p,alpha)14}N reaction rate, and we find that 18F production is significantly decreased in low mass ONeMg novae but less affected in more energetic novae. We also report the first determination of the stopping power for oxygen ions in hydrogen gas near the peak of the Bragg curve (E=193 keV/u) to be (63+/-1)e-15 eV-cm2.
A simulated hull monitoring system based on passive #gamma# ray scanning was set-up in K-01 hot-cell, which consists of a simulated hull basket, a collimator system, a 150 cm"3 HPGe detector and an ORTEC-919 multichannel buffer-computer system. Six different kinds of experimental set-up were established to simulate the variations of #gamma# ray source term distribution (partly concentration) and the variations of matrix density (+46.1%). The experimental results show that the biases of peak area is better than -25.3% for "1"3"7Cs 662 keV #gamma# rays and -18.6% for "1"4"4Ce-"1"4"4Pr 2186 keV #gamma# rays. The hardness of pulse height spectrum is demonstrated to show that the peak area ratio of 2186 keV to 662 keV varies from 380 to 72 when the thickness of lead filter varies form 5 mm to 30 mm. Also studied are the design parameters of collimator system.
The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).
Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the range of the fluorine implant and the ...
Two experiments are currently underway to measure the single-particle weak mixing matrix element for the 1064 KeV transition in "2"0"7Pb. One experiment measures the circular polarization of the 1064 KeV gamma ray emitted from an unpolarized source, while the other experiment measures the forward-backward asymmetry of gamma rays emitted from a polarized source. Analysis of the first set of polarized source data yields an upper limit of 46 eV for the single-particle weak mixing matrix element. copyright 1995 American Institute of Physics.
Total M X-ray cross sections for 12 elements in atomic range 70#<=#Z#<=#92 were measured at 5.96 keV Mn K X-ray photon energy. The average M shell fluorescence yields (anti #omega#_M) of these elements have also been observed using the presently measured cross section values and the theoretical M shell photoionisation cross section values. (orig.).
The #gamma#-radiation following thermal neutron capture in "1"0"0Mo has been studied by singles and coincidence measurements. A "1"0"1Mo level scheme has been deduced and is compared with the results of previous (d,p), (n,#gamma#) and "1"0"1Nb decay studies. The existence of the first excited state at 13.51 keV has been confirmed. The present data yield a neutron binding energy of 5398.4 KeV. (Auth.).
In this work, the chemical transformations induced by 5 keV protons (10{sup 6} ion cm{sup -2}) at the surface of 0.4 {mu}m polyacrylonitrile and polymethacrylonitrile films are analysed by XPS and IRRAS. Spectroscopic changes in both the polymers are globally similar, the most significant feature being a lower relative concentration of nitrogen with respect to carbon closer to the surface. Quantitatively, this change is more marked in the case of polyacrylonitrile which suggests a direct relation with the hydrogen in {alpha} to the nitrile function.
Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, TED was suppressed in the p"+/n junction implanted at 2 ...
In various situations, measurements in prompt gamma neutron activation analysis (PGNAA) are performed to determine the amount of an elemental impurity relative to that of a major constituent of the matrix. An example of this is the measurement of hydrogen concentration in a metallic matrix. In all such cases, a major contributor to the uncertainty in the measurement is the uncertainty in the ratio of the high-purity germanium (HPGe) detector full-energy peak efficiency for the gamma-ray lines of interest (i.e., impurity and matrix gammas). Usually, the ratio is derived from the relative peak efficiency curve, which is determined using isotopic standards that emit multiple gamma ray lines (e.g., "1"5"2Eu) in the energy range <3000 keV, or using prompt gamma radionuclides (e.g., "1"4N, "3"5Cl) in the energy range >3000 keV. In either case, the uncertainty in the ratio of the peak efficiency values derived from such measurements will be on ...
The MOS-technology allows to make tiny electronic lenses for multibeam electron systems. In the paper results of research and principles of designing of tiny magnetic electron lenses are submitted. Electronic lenses with a nonconventional configuration of tiny magnetic circuit and electronic lenses with coincident electric and magnetic fields in nonconventional tiny performance are considered
We study the high-energy emission of the Galactic black hole candidate GX 339-4 using INTEGRAL/SPI and simultaneous RXTE/PCA data. By the end of January 2007, when it reached its peak luminosity in hard X-rays, the source was in a bright hard state. The SPI data from this period show a good signal to noise ratio, allowing a detailed study of the spectral energy distribution up to several hundred keV. As a main result, we report on the detection of a variable hard spectral feature (>150 keV) which represents a significant excess with respect to the cutoff power law shape of the spectrum. The SPI data suggest that the intensity of this feature is positively correlated with the 25 - 50 keV luminosity of the source and the associated variability time scale is shorter than 7 hours. The simultaneous PCA data, however, show no significant change in the spectral shape, indicating that the source is not undergoing a canonical ...
We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ion energy of 3 keV after annealing at 400degC. (author).
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the range of annealing ...
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n ...
The measurements of the K X-ray intensity ratio I(K{alpha} {sub 2}/K{alpha} {sub 1}), I(K{beta} {sub 1}/K{alpha} {sub 1}) and I(K{beta}/K{alpha}) for elements V, Mn, Zn, Tc, Ru, Cd, Xe, Ba, Cs, Hg and Rn were experimentally determined both by photon excitation, in which 59.5 keV {gamma}-rays from a {sup 241}Am and 123.6 keV {gamma}-rays from a {sup 60}Co were used, and following the radioactive decay of {sup 51}Cr, {sup 55}Fe, {sup 67}Ga, {sup 99}Tc, {sup 111}In, {sup 131}I, {sup 133}Ba, {sup 133}Xe, {sup 137}Cs, {sup 201}Tl and {sup 226}Ra. K X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the theoretical values. It was observed that present values agree with the previous theoretical and other experimental results.
The measurements of the K X-ray intensity ratio I(K#alpha# _2/K#alpha# _1), I(K#beta# _1/K#alpha# _1) and I(K#beta#/K#alpha#) for elements V, Mn, Zn, Tc, Ru, Cd, Xe, Ba, Cs, Hg and Rn were experimentally determined both by photon excitation, in which 59.5 keV #gamma#-rays from a "2"4"1Am and 123.6 keV #gamma#-rays from a "6"0Co were used, and following the radioactive decay of "5"1Cr, "5"5Fe, "6"7Ga, "9"9Tc, "1"1"1In, "1"3"1I, "1"3"3Ba, "1"3"3Xe, "1"3"7Cs, "2"0"1Tl and "2"2"6Ra. K X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the theoretical values. It was observed that present values agree with the previous theoretical and other experimental results.
Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.
We examine the accretion properties in a sample of 42 hard (3-60keV) X-ray selected nearby broad-line AGNs. The energy range in the sample is harder than that usually used in the similar previous studies. These AGNs are mainly complied from the RXTE All Sky Survey (XSS), and complemented by the released INTEGRAL AGN catalog. The black hole masses, bolometric luminosities of AGN, and Eddington ratios are derived from their optical spectra in terms of the broad H$\\beta$ emission line. The tight correlation between the hard X-ray (3-20keV) and bolometric/line luminosity is well identified in our sample. Also identified is a strong inverse Baldwin relationship of the H$\\beta$ emission line. In addition, all these hard X-ray AGNs are biased toward luminous objects with high Eddington ratio (mostly between 0.01 to 0.1) and low column density ($<10^{22} \\mathrm{cm^{-2}}$), which is most likely due to the selection effect of the surveys. The hard ...
A study of the electron beam dynamics in the linac is conducted for the FERMI free electron laser (FEL) founded for construction at the Sincrotrone Trieste.
A study of the electron beam dynamics in the linac is conducted for the FERMI free electron laser (FEL) founded for construction at the Sincrotrone Trieste
We show that, for the high electron currents used in present-day free-electron lasers, spontaneous radiation is distributed according to thermal statistics.
... iFfficiency-en- enhanced spontaneous radiation at the free-electron- ... as enhanced spontaneous radiation at the free-electron-laser wavelength. ...
Total M shell X-ray production cross section for 11 elements with 69 #<=# Z #<=# 92 have been measured using an incident photon energy of 5.96 keV. Measurements have been performed using an "5"5Fe annular source and a Si(Li) detector. Average M shell fluorescence yield at each incident photon energy has been deduced, using the experimental total M X-ray production cross section and theoretical M shell photoionization cross section. Present experimental results are compared with other experimental and theoretical values. Reasonable agreement (to within 0.3-28%) is typically obtained between present and other experimental and theoretical values.
The Micro-X instrument is a NASA funded, rocket borne X-ray imaging spectrometer planned for launch in January 2011. An array of Transition Edge Sensors (TESs) will observe incoming photons in the 0.2-3 keV energy band with an energy resolution of 2-4 eV at 1 keV. This will be a substantial improvement over current non-dispersive detectors for X-ray spectroscopy of extended sources and will be the first demonstration of a TES-based microcalorimeter in space. The TESs will utilize the 50 mK stage of an Adiabatic Demagnetization Refrigerator (ADR) as a heat sink, and will be read out by a SQUID time division multiplexer. X-rays will be focused onto the TES array of 128 pixels on a 600 micron pitch by a conically approximated Wolter optic with an effective area of 200 cm2. The spectrometer will have a field of view of 11.8 arcmin. We describe the design and development progress of the instrument.
The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well
The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. From the coincidence data, the new decay scheme was constructed. The previously reported 104.70, 105.95 and 774.15 keV #gamma# rays were observed, and have been assigned to the decay scheme for the first time. A newly observed 1508.01 keV #gamma# ray has also been assigned to the scheme for the first time. The intensities of #beta#"- and the values of log ft to most levels were calculated
We have studied energy levels in "6"3Fe populated in the #beta#-decay of "6"3Mn. A new (preliminary) level scheme of "6"3Fe includes 10 excited states connected by 21 #gamma#-rays. The first excited states at 357 and 451 keV have the level half-lives of 110 ps and 780 ps, respectively. Three states, at 357, 451 and 1132 keV, are strongly #beta#-fed with log ft #approx# 5, while there is only a very week #beta#-feeding, if any at all, to the ground state. The new results imply that "6"3Fe departs from a simple shell model structure observed for heavier N = 37 isotones of "6"5Ni and "6"7Zn. (author)
The L-shell x-ray intensity ratios I(L_#beta#)/I(L_#alpha#) and I(L_#gamma#)/I(L_a_l_p_h_a) for elements with 73 #<=# Z #<=# 83 have been measured at photon incident energies of 17.8, 25.8 and 46.9 keV. The emitted x-rays were measured with a Si(Li) detector system. The results for Re, Pt and Tl are being reported for the first time. A comparison is made of the experimental results with the calculated values obtained by using the theoretical x-ray emission rates, subshell ionisation cross sections, subshell fluorescence yields and Coster-Kronig transition probabilities. The experimental results are in reasonable agreement with the theoretical values. (author).
Gamma ray spectra in the decay of 185Ta and 185mW have been studied with Ge (Li) detectors. The 185mW isomeric transition at 131.6 keV is shown to be of E3 multipolarity. A level scheme of 185W is proposed with the following energy levels (energies in keV, spin and K quantum numbers in brackets): 0 (3/2- 3/2), 23.5 (1/2- 1/2), 65.9 (5/2- 3/2), 93.5 (3/2- 1/2) (uncertain), 173.9 (7/2- 3/2), 188.1 (5/2- 1/2), 197.5 (11/2+ 11/2) , 243.5 (7/2- 7/2), and 390.8 (9/2- 7/2)
Research preformed consisted of: (1) publication of an experimental paper for the n + {sup 40}Ar high resolution total cross section and submission of a theoretical paper dealing with the prediction of the average parameters deduced from the the data; (2) preliminary R-matrix analysis of the neutron total cross section data for the n + {sup 208}Pb systems, up to an energy of 1.7 MeV; (3) completed the analysis of neutron total cross section of data for n + {sup 54}Fe up to energy of 500 keV, with j{sup {pi}} values confirmed, in most cases, by differential scattering data; (4) analysis of total cross section data for the n + {sup 88}Sr system up to an energy of 175 keV; (5) development of a graphical interface for the code RFUNC, used to calculate the differential scattering cross sections, for comparison with measurements.
An ytterbium-169 high dose rate brachytherapy source, distinguished by an intensity-weighted average photon energy of 92.7 keV and a 32.015#+-#0.009 day half-life, is characterized in terms of the updated AAPM Task Group Report No. 43 specifications using the MCNP5 Monte Carlo computer code. In accordance with these specifications, the investigation included Monte Carlo simulations both in water and air with the in-air photon spectrum filtered to remove low-energy photons below 10 keV. TG-43 dosimetric data including S_K, D(r,#theta#), #LAMBDA#, g_L(r), F(r,#theta#), #phi#_a_n(r), and #phi#_a_n were calculated and statistical uncertainties in these parameters were derived and calculated in the appendix.
We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.
The energy dispersive beamline X6A at the National Synchrotron Light Source employs a curved crystal monochromator (polychromator) which focuses a range ([similar to]1 keV) of x-ray energies into a narrow (100--120 [mu]m) line image. Although this beamline was constructed primarily for time-dependent EXAFS experiments, we have begun to explore the use of this instrument for energy dispersive diffraction experiments with different types of sample including macromolecular crystals. The tunability ([ital E]=6.5 to 21 keV) and flexibility ([Delta][ital E]=100--1000 eV) of the instrument makes the beamline ideal as a test bed for the application of polychromatic single-crystal diffraction techniques to different chemical or biological materials.
We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.
L_#alpha#/L_l X-ray intensity ratios have been measured in elements Ta, W, Au, Hg, Tl, Pb, Bi, Th and U using L-shell photoionization by 60 keV photons. The present results are found to agree with the calculated values of Scofield within experimental uncertainties. (author).
An investigation of the Ll x-#gamma# angular correlations following the decay of "2"0"7Bi is done by using a Si(Li) semiconductor counter as L x-ray detector. Coincidence measurements at five different angles were made between the 570-keV #gamma# ray (gated in the movable counter) and the Ll x spectrum (displayed in a multichannel analyzer).
The spectrometric methods and equipment for "2"0"1Pb and "2"0"1Tl activity control in the prepared thallium chloride in industrial production are described. Estimation of thallium-201 activity is carried out in accord with the square of summary photopeak caused by #gamma#-quanta at 167 keV energy. Attenuation is paid to spectrometer calibration. 5 refs.; 2 figs.; 2 tabs.
Lead-203 [52.1 h, 279 (80.1%) KeV] has been recognized as a potentially useful tracer for tumor specific radiopharmaceuticals due to its favorable nuclear and chemical properties. This paper reports the cyclotron production of lead-203 and the labelling of monoclonal antibody B72.3, conjugated with 2-(p-isothiocyanatobenzyl)DOTA, with lead-203 in 30% yield. In vivo biodistribution and stability studies in mice are being conducted.
The quantitative imaging of a phase object using 16 keV x-rays is reported. The theoretical basis of the techniques is presented along with its implementation using a synchrotron x-ray source. It is found that the phase image is in quantitative agreement with independent measurements of the object. 13 refs., 5 figs.
We describe the continued development of a portable, real-time neutron spectrometer. The spectrometer is composed of two distinct detector systems: a Helium 3 gas filled proportional counter for the lower neutron energy interval between 20 KeV and 2 MeV and a bulk silicon solid state detector for the higher energy interval between 2 MeV and 500 MeV. Modeling and experimental results with mono-energetic neutron beams are reported.
To suppress space charge blowup in an ion beam passing through a photoneutralizer, it is necessary to introduce some background gas. An analysis is presented of the neutralization of a high-energy, >200-keV negative deuterium ion beam, exposed to photodetachment while in the presence of deuterium. With a gas thickness of <0.01 Torr.cm, the neutral fraction in the output beam is found to be about the same as that gotten from the photoneutralizer operating in vacuum. Neutral atom beam injection for plasma heating is discussed.
A study of the 150-300 keV proton beam transmission through glass (borosilicate) tapered capillaries with different diameters of the input and output of the capillary was performed. The focusing effect was observed. The areal density of the transmitted beam is enhanced by approximately 20 times. It was shown that changing a taper angle from 0.5 deg to 1.7 deg evidences the increase of the transmission coefficient more than by 300 times keeping the initial energy spectrum of ions. (author)
The capture cross sections of Am 242m can be deduced from resonances analysis at low energy and computed with theoretical models at high energy. In this work, a coherent set of cross sections which reproduced the experimental values of the fission cross sections is computed. These calculations were performed for an energy of the incoming neutron between 1 keV and 1 MeV.
Molar extinction coefficients for the solid solutes in aqueous solutions of some alkaline earth chlorides such as MgCl_2.6H_2O, CaCl_2, SrCl_2.6H_2O and BaCl_2.2H_2O have been determined at 81, 356, 511, 662, 1173 and 1332 keV energies in different concentration using the narrow beam transmission methods. (author)
The magnetic moments of "1"7"7Ta and sup(181,182,187)Re levels decaying via the K-forbidden transitions are measured. The nuclei studied are produced via the "1"7"7W and sup(181,182)Os and "1"8"7W #beta#-decay respectively. The magnetic moments have been measured using the method of the differential #gamma##gamma# angular correlations, perturbed by an external magnetic field. The following magnetic moments and lifetimes are obtained: for the 5/2"-1/2"-[541] "1"8"1Re level with excitation energy of 357 keV #mu#/#mu#sub(n)=2.00+-0.10, Tsub(1/2)=(76+-8)x10sup(-8) s; for the 186.4 keV 5/2"-1/2"-[541] "1"7"7Ta level #mu#/#mu#sub(n)=2.02+-0.13, Tsub(1/2)=(2.78+-0.09)x10sup(-6) s; for the 236 keV 2"- "1"8"2Re level #mu#/#mu#sub(n)=2.12+-0.08; for the 203 keV 9/2"- [514] "1"8"7Re level #mu#/#mu#sub(n)=5.04+-0.09.
The results of Sandia National Laboratories' participation in the NASA Planetary Definition and Design Program are summarized. Areas reported include the characterization of large area cadmium zinc telluride spectrometers and the application of simulation techniques to the prediction of device performance. Also investigated was the response of mercuric iodide devices in the region from 1 to 100 KeV. A literature study to determine the status or radiation damage measurements in room temperature semiconductor devices is also reported.
The Ksub(#beta#)/Ksub(#alpha# 12) x-ray intensity ratio of the Si K spectrum was measured for proton impact on Si0_2 in the energy range 300-800 keV. An energy dependence of the intensity ratio was found and an explanation is given in terms of multiple ionisation. (author).
The INTEGRAL/SPI spectrometer was designed to observe the sky in the energy band of 20 keV to 8 MeV. The specificity of instrument SPI rests on the excellent spectral resolution (2.3 keV with 1 MeV) of its detecting plan, composed of 19 cooled germanium crystals; covering an effective area of 508 cm{sup 2}. The use of a coded mask, located at 1.7 m above the detection plan ensures to it a resolving power of 2.5 degrees. The aim of this thesis, begun before the INTEGRAL launch, is made up of two parts. The first part relates to the analysis of the spectrometer calibration data. The objective was to measure and check the performances of the telescope, in particular to validate simulations of the INTEGRAL/SPI instrument response. This objective was successfully achieved. This analysis also highlights the presence of a significant instrumental background noise. Whereas, the second part concentrates on the data analysis of the Vela region ...
The decay of molybdenum-101 has been investigated using the three-parameter (#gamma#-#gamma#-t) coincidence system of HPGe-HPGe detectors. According to the off-line analysis, the decay scheme was modified. The positions of 221.80, 318.00, 377.90; 452.50, 515.42, 1011.05, and 1759.72 keV transitions have been arranged again, the transition positions of 104.70, 105.95, and 774.15 keV gamma rays have been assigned for the first time, the positions of 169.00, 590.91, 980.52, and 1431.68 keV transitions have been reconfirmed, and the 1508.01 keV gamma ray was observed simultaneously for the first time and its transition position has been assigned. The #beta#"- intensities and the values of log ft of most levels were calculated. Combining with the high-spin states observed by the in-beam #gamma#-ray spectroscopy of previous decay works, the structure of the excited positive/negative-parity yrast states of ...
We conducted (n, #gamma#) and (d, p) reactions leading to "8"7", "8"8", "8"9"Sr in addition to "8"8Sr (d, t) "8"7Sr and 24 keV neutron capture in "8"8Sr. (orig./HSI).
Atoms in very high Rydberg states, 100 approx-lt n approx-lt 1100, are used to investigate electron-molecule interactions at electron energies extending down to a few microelectronvolts. At such energies the cross section for electron capture by CCl_4 is observed to vary inversely with electron velocity, indicative of an s-wave process. Studies with the polar target CH_3Cl suggest that dipole-supported states may be important in inelastic electron-polar molecule scattering at very low electron energies.
An e.p.r. spectrum of the reduced form of the electron-transport component (X), thought to be the primary electron acceptor of Photosystem I, was obtained. By using line-shape simulations of this component...Full Text Available
The existence of a narrow peak of electron state density in A-15 is explained by a strong electron-phonon interaction that brings about the polaron narrowing of zone. In the supposition of weak and intermediate bond, the analytical expression for the critical transition temperature is found that corre lates Tsub(c) with phonon spectrum. The model permits to explain Tsub(c) correlation with the number of electrons per atom, temperature direction of resistance, value and temperature dependence of magnetic susceptibility and electron thermal capacity.
The existence of a narrow peak of electron state density in A-15 is explained by a strong electron-phonon interaction that brings about the polaron narrowing of zone. In the supposition of weak and intermediate bond, the analytical expression for the critical transition temperature is found that corre lates Tsub(c) with phonon spectrum. The model permits to explain Tsub(c) correlation with the number of electrons per atom, temperature direction of resistance, value and temperature dependence of magnetic susceptibility and electron tehrmal capacity.
We study two correlated electrons in a nearest-neighbour tight-binding chain, with both on-site and nearest-neighbour interaction. Both the cases of parallel and antiparallel spin are considered. In addition to the free electron band for two electrons, there are correlated bands with positive or negative energy, depending on whether the interaction parameters are repulsive or attractive. Electrons form bound states, with amplitudes that decay exponentially with separation. Conditions for such states to be filled at low temperatures are discussed.
A new magnetic electron microscope, UEMB-100, was designed with an increased electron-optical parameter. The electron-optical system consists of an electron canon (the high voltage is supplied by armored lead) and condensed, objective, intermediate, and projection lenses. In contrast to other native apparatuses, the microscope has a high resolving property (up to 20A) snnd great universality. (tr-auth)
Conversion electron studies of medium-heavy to heavy nuclear mass systems are important where the internal conversion process begins to dominate over gamma-ray emission. The use of a segmented detector array sensitive to conversion electrons has been used to study multiple conversion electron cascades from nuclear transitions. The application of the silicon array for conversion electron detection (SACRED) for in-beam measurements has successfully been implemented. (orig.). With 2 figs.
An electron accelerator unit is described for electron beam therapy, comprising: a source of an electron beam; means for finally directing at least a portion of the beam to a therapy site, the directing means being mechanically independent of, and electrically isolated from, the source, and having a target area; and means for aligning the source with the directing means, the aligning means comprising means for projecting at least one beam of light from the source toward the target area.
An electron accelerator unit is described for electron beam therapy, comprising: a source of an electron beam; means for finally directing at least a portion of the beam to a therapy site, the directing means being mechanically independent of, and electrically isolated from, the source, and having a target area; and means for aligning the source with the directing means, the aligning means comprising means for projecting at least one beam of light from the source toward the target area.
The electron beam ion source (EBIS) at Texas A and M University was constructed and is currently undergoing tests on the injection and transmission of the electron beam through the solenoid. Results of computer simulation of the electron beam are presented, as well as measurements of electron beam profiles using a pinhole beam analyzer.
A multi-group neutron-gamma cross-section library in DTF-IV format is supplemented with electron production matrix to generate a coupled neutron-gamma-electron library. This is realized by estimating the contributions from Compton scattering, pair production and photoelectric effect to the electron production cross-sections. A novel application of this new library, which involves transport of neutrons, gammas and electrons, for estimating the Compton current due to a pulse of radiation in air is discussed.
A multi-group neutron-gamma cross-section library in DTF-IV format is supplemented with electron production matrix to generate a coupled neutron-gamma-electron library. This is realized by estimating the contributions from Compton scattering, pair production and photoelectric effect to the electron production cross-sections. A novel application of this new library, which involves transport of neutrons, gammas and electrons, for estimating the Compton current due to a pulse of radiation in air is discussed.
Photosynthetic (Ps) electron transport pathways often contain multiple electron carriers with overlapping functions. Here we focus on two c-type cytochromes (cyt) in facultative phototrophic...Full Text Available
The main subject of this thesis is the study of the hardronic final state in deep-inelastic electron-proton scattering. Theexperiment described in this thesis is performed with such a high resolution that the substructure of the proton is probed by the electron beam with a resolution of less than 10{sup -15} cm. (orig./HSI).
For over 50 years, electron beams have been an important modality for providing an accurate dose of radiation to superficial cancers and disease and for limiting the dose to underlying normal tissues and structures. This review looks at many of the important contributions of physics and dosimetry to the development and utilization of electron beam therapy, including electron treatment machines, dose specification and calibration, dose measurement, electron transport calculations, treatment and treatment-planning tools, and clinical utilization, including special procedures. Also, future changes in the practice of electron therapy resulting from challenges to its utilization and from potential future technology are discussed. (review)
Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).
When polarized electrons traverse a region where the laser light is focused their polarization varies even if their energy and direction of motion are not changed. This effect is due to interference of the incoming electron wave and an electron wave scattered at zero angle. Equations are obtained which determine the variation of the electron-density matrix, and their solutions are given. The change in the electron polarization depends not only on the Compton cross section but on the real part of the forward Compton amplitude as well. It should be taken into account, for example, in simulations of the e{yields}{gamma} conversion for future {gamma}{gamma} colliders. (orig.). 16 refs.
When polarized electrons traverse a region where the laser light is focused their polarization varies even if their energy and direction of motion are not changed. This effect is due to interference of the incoming electron wave and an electron wave scattered at zero angle. Equations are obtained which determine the variation of the electron-density matrix, and their solutions are given. The change in the electron polarization depends not only on the Compton cross section but on the real part of the forward Compton amplitude as well. It should be taken into account, for example, in simulations of the e#->##gamma# conversion for future #gamma##gamma# colliders. (orig.).
Studies of destruction of very-high-n (100electron model suggests that, for ultralow electron energies (#approx#80 #mu#eV--1.4 meV), the cross section #sigma#(var-epsilon) for rotationally inelastic scattering of electrons by a polar target varies approximately as 1/var-epsilon, where var-epsilon is the electron energy.
The Advanced Power Electronics Interfaces for Distributed Energy Workshop, sponsored by the California Energy Commission Public Interest Energy Research program and organized by the National Renewable Energy Laboratory, was held Aug. 24, 2006, in Sacramento, Calif. The workshop provided a forum for industry stakeholders to share their knowledge and experience about technologies, manufacturing approaches, markets, and issues in power electronics for a range of distributed energy resources. It focused on the development of advanced power electronic interfaces for distributed energy applications and included discussions of modular power electronics, component manufacturing, and power electronic applications.
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at ...
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same ...
High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is ...
We report results of the 2006 April multi-wavelengths campaign of SS 433, focusing on X-ray data observed with Suzaku at two orbital phases (in- and out-of- eclipse) and simultaneous optical spectroscopic observations. By analyzing the Fe25 K_alpha lines originating from the jets, we detect rapid variability of the Doppler shifts, dz/dt ~ 0.019/0.33 day^-1, which is larger than those expected from the precession and/or nodding motion. This phenomenon probably corresponding to "jitter" motions observed for the first time in X-rays, for which significant variability both in the jet angle and intrinsic speed is required. From the time lag of optical Doppler curves from those of X-rays, we estimate the distance of the optical jets from the base to be ~(3-4) \\times 10^14 cm. Based on the radiatively cooling jet model, we determine the innermost temperature of the jets to be T_0 = 13 +/- 2 keV and 16 +/- 3 keV (the average of the blue and red jets) ...
The neutron capture cross sections of Sr-88 and Y-89 were measured in a quasi-stellar neutron spectrum for kT = 25 keV via the activation method. Relevant systematic uncertainties were determined experimentally by repeated activations under different conditions and with different samples. Gold was used as a cross section standard. The resulting stellar cross sections for kT = 30 keV are 6.13 + or - 0.18 mbarn for Sr-88 and 19.0 + or - 0.6 mbarn for Y-89. The partial cross section Sr-86(n, gamma) Sr-87m was measured to 48.1 + or - 1.2 mbarn. Compared to previous data, the associated uncertainties are reduced by factors of 3 and 5, respectively. The implications for s-process nucleosynthesis around magic neutron number N = 50 are discussed in the light of new information on neutron density and temperature. 38 refs.
The neutron capture cross sections of Sr-88 and Y-89 were measured in a quasi-stellar neutron spectrum for kT = 25 keV via the activation method. Relevant systematic uncertainties were determined experimentally by repeated activations under different conditions and with different samples. Gold was used as a cross section standard. The resulting stellar cross sections for kT = 30 keV are 6.13 + or - 0.18 mbarn for Sr-88 and 19.0 + or - 0.6 mbarn for Y-89. The partial cross section Sr-86(n, gamma) Sr-87m was measured to 48.1 + or - 1.2 mbarn. Compared to previous data, the associated uncertainties are reduced by factors of 3 and 5, respectively. The implications for s-process nucleosynthesis around magic neutron number N = 50 are discussed in the light of new information on neutron density and temperature. 38 refs.
The neutron capture cross sections of Sr-88 and Y-89 were measured in a quasi-stellar neutron spectrum for kT = 25 keV via the activation method. Relevant systematic uncertainties were determined experimentally by repeated activations under different conditions and with different samples. Gold was used as a cross section standard. The resulting stellar cross sections for kT = 30 keV are 6.13 + or - 0.18 mbarn for Sr-88 and 19.0 + or - 0.6 mbarn for Y-89. The partial cross section Sr-86(n, gamma) Sr-87m was measured to 48.1 + or - 1.2 mbarn. Compared to previous data, the associated uncertainties are reduced by factors of 3 and 5, respectively. The implications for s-process nucleosynthesis around magic neutron number N = 50 are discussed in the light of new information on neutron density and temperature.
Neutron elastic and inelastic scattering cross sections of _2_3_8U and _2_3_2Th have been measured at the University of Lowell for states below 1.8 MeV. A time-of-flight (TOF) spectrometer was used. The disc-shaped scatterer was oriented to optimize energy resolutions for 200-to-500-keV neutrons. Neutrons were obtained via the _7Li(p,n)_7Be reaction. Targets were prepared by in-situ evaporation of Li onto a Ta backing. During the evaporation, the target thickness was monitored using a 5-m-flight-path TOF spectrometer; a typical target had a neutron thickness from 8 to 10 keV for Esub(p) = 2.25.MeV. Spectra were analyzed using the unfolding code TINA; standard peak shapes were obtained from codes LAGUE and LAPA. Results obtained will be presented.
The /sup 40/Ca(p,n)/sup 40/Sc reaction was studied at 134 MeV. Neutron energy spectra were measured by the time-of-flight technique with resolutions of 220 keV at angles from 0"0 to 41"0 and 415 keV out to 62"0. The 2"-,3"-,4"-,5"- band of states based on the (f/sub 7/2/,d/sub 3/2//sup -1/) 1p1h structure was observed at low excitation energies, in good agreement with known analog states in /sup 40/Ca and /sup 40/K. The shapes of the cross-section and analyzing-power angular distributions are in good agreement with distorted-wave impulse-approximation calculations using simple 1p1h (Tamm-Dancoff approximation) shell-model wave functions. A relatively strong transition to a state at E/sub x/ = 2.3 MeV with L = 3 is identified tentatively as a 4"- state with the predominant 1p1h structure (1f/sub 7/2/,2s/sub 1/2//sup -1/).
The enhancement of positive secondary ion yields of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In/sup +/ were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5x10/sup 15/ to 4x10/sup 16/ O-atoms/cm/sup 2/. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si/sup +/ intensity is proportional to c(O)sup(x) (with x=1.4) in the concentration regime, 1.5<=c(O)<=30 at%. The O/sup +/ intensity shows a similar dependence for c(O)> or approx.20 at.%.
The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized junction on Ge"+ energies of 2keV and ...
Coded imaging techniques using thick, micro-Fresnel zone plates as coded apertures have been used to image x-ray emissions (2-20 keV) and 3.5 MeV Alpha particle emissions from laser driven micro-implosions. Image resolution in these experiments was 3-8 ..mu..m. Extension of this coded imaging capability to higher energy x-rays (approx. 100 keV) and more penetrating charged particles (e.g. approx. 15 MeV protons) requires the fabrication of very thick (50-200 ..mu..m), high aspect ratio (10:1), gold Fresnel zone plates with narrow linewidths (5-25 ..mu..m) for use as coded aperatures. A reactive ion etch technique in oxygen has been used to produce thick zone plate patterns in polymer films. The polymer patterns serve as electroplating molds for the subsequent fabrication of the free-standing gold zone plate structures.
Coded imaging techniques using thick, micro-Fresnel zone plates as coded apertures have been used to image x-ray emission (2--20 keV) and 3.5 MeV Alpha particle emissions from laser driven micro-implosions. Image resolution in these experiments was 3--8 ..mu..m. Extension of this coded imaging capability to higher energy x rays (approx.100 KeV) and more penetrating charged particles (e.g., approx.15 MeV protons) requires the fabrication of very thick (50--200 ..mu..m), high aspect ratio (10:1), gold Fresnel zone plates with narrow linewidths (5--25 ..mu..m) for use as coded apertures. A reactive ion etch technique in oxygen has been used to produce thick zone plate patterns in polymer films. The polymer patterns serve as electroplating molds for the subsequent fabrication of the free-standing gold zone plate structures.
Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si"+ "+ FIB also indicated the possibility to produce submicrometer patterns by selectively modifying film properties from superconductive to normal or ...
The effect of the #+-# 0.75 T external magnetic field on the K_#alpha#_1, K_#alpha#_2, K_#beta#_'_1 and K_#beta#_'_2 x-ray production cross sections and radiative vacancy transfer probabilities from K-shell to L2 and L3 subshells and M-shell for ferromagnetic Nd, Gd and Dy and paramagnetic Eu and Ho have been investigated, using the 59.5 keV incident photons. K-shell fluorescence yields and K x-ray intensity ratios for these elements have been determined in the external magnetic field also. The K x-rays from different targets were detected using a high-resolution Si(Li) semiconductor detector. For B = 0, the present experimental results were compared with the experimental and theoretical data in the literature. The results show that K-shell fluorescence parameters such as photoionization cross section, fluorescence yield, radiation rates, vacancy transfer probabilities and spectral linewidth can change owing to the applied magnetic field. (authors)
The measurements of the L X-ray intensity ratio I(L?)/I(L?), I(L?)/I(L?), I(L?)/I(L?), I(L?)/I(L?) and I(L?)/I(L?) for elements Dy, Ho, Yb, W, Hg, Tl and Pb were experimentally determined both by photon excitation, in which 59.5 keV ?-rays from a filtered radioisotope 241Am was used, and by the radioactive decay of 160Tb, 160Er, 173Lu, 182Re, 201Tl, 203Pb and 207Bi. L X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the calculated theoretical values. Theoretical values of the I(L?/L?), I(L?/L?), I(L?/L?), I(L?/L?) and I(L?/L?) intensity ratios were calculated using theoretically tabulated values of subshell photoionization cross-section, fluorescence yield, fractional X-ray emission rates, Coster-Kronig transition probabilities. It was observed that present values agree with previous theoretical and other available experimental results.
The L shell fluorescence cross-sections of the elements in range 45Z50 have been determined at 8keV using Synchrotron radiation. The individual L X-ray photons, Ll, La, LbI, LbII, LgI and LgII produced in the target were measured with high resolution Si(Li) detector. The experimental set-up provided a low background by using linearly polarized monoenergetic photon beam, improving the signal-to-noise ratio. The experimental cross-sections obtained in this work were compared with available experimental data from Scofield [1,2] Krause [3,4] and Scofield and Puri et al. [5,6]. These experimental values closely agree with the theoretical values calculated using Scofield and Krause data, except for the case of Lg, where values measured of this work are slighter higher.
Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.
The Micro-X instrument is a rocket borne, X-ray imaging spectrometer planned for launch in October 2011. An array of 128 Transition Edge Sensors (TESs) on a 600 micron pitch will observe incoming photons in the 0.2-3 keV energy band with an energy resolution of 2-4 eV at 1 keV. X-rays will be focused onto the TES array by a conically approximated Wolter optic with an effective area of 300 cm^2 giving the instrument a field of view of 11.8 arcmin. This performance will constitute a substantial improvement over current non-dispersive detectors for X-ray spectroscopy of extended sources and will be the first demonstration of a TES-based microcalorimeter in space. The TESs will utilize the 50 mK stage of an Adiabatic Demagnetization Refrigerator (ADR) as a heat bath, and will be read out by a SQUID time division multiplexer. The first flight of the Micro-X instrument will observe the Puppis A supernova remnant. Future targets include the core of ...
For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ...
For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe"+, 360 keV He"+, and 180 keV H"+ simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ductility (>20% ...
Technologies producing high power negative ion beams have been highly developed in these years at JAERI for use in neutral beam injectors for heating the thermonuclear fusion plasmas. At present, it is possible to produce multi-ampere H-/D- ion beams quasi-continuously at energies more than a few hundred keV with a good beam optics of beamlet divergence of a few milli-radian. Based on these technologies, two R and D projects have been initiated; one is to develop a 22A/500keV/10s D- ion source for the neutral beam injector for JT-60U, and the other is to develop a 1A/1MeV/60s H- ion source to demonstrate high current negative ion acceleration up to the energy of 1MeV, the energy required for the neutral beam injector for International Thermonuclear Experimental Reactor (ITER). (author).
A cell calculation code SLAROM-UF has been developed for fast reactor analyses to produce effective cross sections with high accuracy in practical computing time, taking full advantage of fine and ultra-fine group calculation schemes. The fine group calculation covers the whole energy range in a maximum of 900-group structure. The structure is finer above 52.5 keV with a minimum lethargy width of 0.008. The ultra-fine group calculation solves the slowing down equation below 52.5 keV to treat resonance structures directly and precisely including resonance interference effects. Effective cross sections obtained in the two calculations are combined to produce effective cross sections over the entire energy range. Calculation accuracy and improvements from conventional 70-group cell calculation results were investigated through comparisons with reference values obtained with continuous energy Monte Carlo calculations. It was confirmed that ...
A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other ...
Two measurement methods to determine the rate of neutral free radical production by the photo-deionization of negative ion beams (PDINIB) are introduced. These methods, namely, photoelectron-current measurement by low-frequency electro-modulation probe (PMMP) and measurement of decrease in the negative-ion beam current (DNIC) were employed to evaluate the production rate in a trial surface-processing apparatus developed in the author's laboratory utilizing a steady-flux refined beam of neutral free radicals (RBNR) produced by the PDINIB procedure. A {sup 63}Cu{sup -} negative ion beam of kinetic energy E{sub i} varied up to 15 keV was irradiated with a 514.5 nm visible light beam from a 25 W CW Ar{sup +} ion laser. The detection limit of the production rate by the PMMP setup was as high as 6 x 10{sup 9} s{sup -1} under the condition that E{sub i}=15 keV, the negative-ion beam current I{sub i}=4 {mu}A and the laser power P=6 W. The DNIC ...
Lanthanum halide (LaBr_3:Ce) scintillators offer significantly better resolution (< 3% at 662 keV) relative to NaI(Tl) and have recently become commercially available in sizes large enough for the handheld, Radio-Isotope Identification Device (RIID) market. Drawbacks to lanthanum halide detectors, however, include internal radioactivity contributing to spectral counts, and a low-energy response which can cause detector resolution to be worse than that of NaI(Tl) below 100 keV. To study the potential of this new material for RIIDs we performed a series of measurements comparing a 1.5 x 1.5-inch LaBr_3:Ce detector with an Exploranium GR-135 RIID, which contains a 1.5 x 2.2-inch NaI(Tl) detector. Measurements were taken for short timeframes, as typifies RIID usage. Measurements included examples of naturally occurring radioactive material (NORM), typically found in cargo, and special nuclear materials. Some measurements were non-contact, ...
CEA-Valduc produces some radioactive waste (mainly alpha emitters). Legislation requires producers to sort their waste by activity and type of isotopes, and to package them in order to forward them to the appropriate reprocessing or storage facility. Our lab LMDE (laboratory for measurements on nuclear wastes and valuation) is in charge of the characterization of the majority of waste produced by CEA-Valduc. Among non-destructive methods to characterize a radioactive object, gamma-spectroscopy is one of the most efficient. We present to this conference the method we use to characterize nuclear waste and the system we developed to characterize our germanium detectors. The goal of this system is to obtain reliable numerical models of our detectors and calculate their efficiency curves. Measurements are necessary to checks models and improve them. These measurements are made on a bench using pinpoint sources ("1"3"3Ba, "1"5"2Eu) from 60 keV to 1500 ...
Polarization measurements in the X-ray and gamma-ray energy range can provide crucial information on massive compact objects such as black holes and neutron stars. The Polarized Gamma-ray Observer (PoGO) is a new balloon-borne instrument designed to measure polarization from astrophysical objects in the 30-100 keV range, under development by an international collaboration with members from United States, Japan, Sweden and France. To examine PoGO's capability, a beam test of a simplified prototype detector array was conducted at the Argonne National Laboratory Advanced Photon Source. The detector array consisted of seven plastic scintillators, and was irradiated by polarized photon beams at 60, 73, and 83 keV. The data showed a clear polarization signal, with a measured modulation factor of $0.42 \\pm 0.01$. This was successfully reproduced at the 10% level by the computer simulation package Geant4 after modifications to its implementation of ...
Recent X-ray and radio observations have identified a transient low-mass X-ray binary (LMXB) located only 0.1 pc in projection from the Galactic center, CXOGC J174540.0-290031. In this paper, we report the detailed analysis of X-ray and infrared observations of the transient and its surroundings. Chandra bservations detect the source at a flux of F_X = 2e-12 erg cm^-2 s^-1 (2-8 keV). After accounting for absorption both in the interstellar medium and in material local to the source, the implied luminosity of the source is only L_X = 4e34 erg/s (2-8 keV; D=8 kpc). However, the diffuse X-ray emission near the source also brightened by a factor of 2. The enhanced diffuse X-ray emission lies on top of a known ridge of dust and ionized gas that is visible infrared images. We interpret the X-ray emission as scattered flux from the outburst, and determine that the peak luminosity of CXOGC J174540.0-290031 was >2e36 erg/s. We suggest that the ...
Though notes in electronic medical record systems (EMRs) have advantages, they are often criticized for their unattractive and unprofessional appearance. We sought to identify notes regarded by physicians...Full Text Available
A detailed treatment is introduced to measure the dynamic stability of the relativistic electrons in a self-amplified spontaneous emission free-electron laser (FEL) system, which includes the numerical approach of the Kolmogorov entropy (entropy-like quantity), the general equations of motion for a charged particle and the method of monitoring the simulation accuracy. Numerical experiments reveal a new phenomenon that there exists the possibility of the transition from chaotic to non-chaotic phase-space trajectories of the strongly relativistic electrons due to the effect of their self-fields. The adiabatic magnetic field of a one-dimensional wiggler may have a slight influence on the electron transportation in the absence of the FEL fields, but substantially affects the dynamic stability of the electrons in the process of the FEL interaction. Moreover, the laser fields diminish the ...
In the beam pipe of the positron damping ring of the Next Linear Collider, electrons will be created by beam interaction with the surrounding vacuum chamber wall and give rise to an electron cloud. Several solutions are possible for avoiding the electron cloud, without changing the bunch structure or the diameter of the vacuum chamber. Some of the currently available solutions for preventing this spurious electron load include reducing residual gas ionization by the beam, minimizing beam photon-induced electron production, and lowering the secondary electron yield (SEY) of the chamber wall. We will report on recent SEY measurements performed at SLAC on TiN coatings and TiZrV non-evaporable getter thin films.
The kinetic energy transferred to some elements by an electron of kinetic energy 100 to 400 kV is discussed. The displacement rates are compared to the signal generation. (DCL)
The symposium reviewed the use of electronics in mining today. Subjects covered include control systems; remote sensing; telemetry; data transmission; microprocessors and transportation systems. 15 papers have been abstracted separately.
This study investigated dose to bone tissue in electron beam therapy. Measurements were made using films and thermoluminescent dosimeters in a polystyrene phantom containing bone inhomogeneity for 15-MeV, 12-MeV, and 9-MeV electron beams. An increase in dose of approximately 18%, 12%, and 11%, for the three electron energies respectively, relative to the dose in polystyrene, was found for bone material having an electron density (relative to water) of 1.73. Measurements were also made using films for 15- and 9-Mev electrons in a phantom with a mandibular bone and teeth. A dose enhancement in bone of approximately 10% and 7%, respectively, for the two energies was found in the phantom where the electron density of bone was about 1.60. These results suggest that injury to bone is possible in those clinical situations where high doses of ...
This study investigated dose to bone tissue in electron beam therapy. Measurements were made using films and thermoluminescent dosimeters in a polystyrene phantom containing bone inhomogeneity for 15-MeV, 12-MeV, and 9-MeV electron beams. An increase in dose of approximately 18%, 12%, and 11%, for the three electron energies respectively, relative to the dose in polystyrene, was found for bone material having an electron density (relative to water) of 1.73. Measurements were also made using films for 15- and 9-Mev electrons in a phantom with a mandibular bone and teeth. A dose enhancement in bone of approximately 10% and 7%, respectively, for the two energies was found in the phantom where the electron density of bone was about 1.60. These results suggest that injury to bone is possible in those clinical situations where high doses of ...
X-ray fluorescence analysis was used to determine the zinc content of the ''Perilacin'' powder and the ZnO content of the ''Epiderman-pix'' powder. The characteristic Ksub(#alpha#) line of zinc was excited using a "1"4"7Pm/Mo source (10"7 s"-"1) and the molybdenum Ksub(#alpha#) line (17.47 keV). 4 to 5% Zn and 45 to 49% ZnO were determined with a NaI(Tl) scintillation detector. The radiation intensity was found to decrease with particle size. (M.K.).
We have synthesized ozone by irradiating thin solid films of oxygen and oxygen-water mixtures with 100 keV protons, motivated by recent reports of condensed O_3 on icy satellites in the outer Solar system. We measured the depth of the Hartley absorption band in the ultraviolet by reflectance spectroscopy and used it to quantify the column density of ozone. We analyzed the results using a three-component (O, O_2 and O_3) model that successfully explains the fluence dependence of ozone production.
Theoretical analysis of the electric field bifurcation is made for the LHD plasma. For given shapes of plasma profiles, a region of bifurcation is obtained in a space of the plasma parameters. In this region of plasma parameters, the electric field domain interface is predicted to appear in the plasma column. The reduction of turbulent transport is expected to occur in the vicinity of the interface, inducing a internal transport barrier. Within this simple model, the plasma with internal barriers is predicted to be realized for the parameters of T{sub e}(0) {approx} 2 keV and n(0) {approx_equal} 10{sup 18} m{sup -3}. (author)
The K-shell X-ray intensity ratios for W, Au, Tl, Pb, Bi, Th and U were measured at a photon incident energy of 121.9 keV from "5"7Co radionuclide. A comparison between the experimental results and the theoretically calculated values shows that the experimental results are, in general, higher than the theoretical values. The measured intensities are regarded to be reported for the first time. (author) 9 refs.; 1 tab.
Recent studies have provided data that make it possible to estimate the efficiency and cost of future beamlines using a chemical oxygen-iodine laser as a neutralizer. These studies indicate that a 400-keV neutral deuterium beam of more than 20 A will operate at an efficiency >60%, with the capital cost of the neutralizer at less than $2/W of neutral beam output. Beamlines of lower current and less energy will operate at poorer efficiencies and higher neutralizer costs per watt of neutral beam. These are estimates. As they are very sensitive to changes in the assumptions from which they were derived, they must be used with some caution. Additional studies are expected to provide more reliable estimates.
Energy level schemes are derived from gamma spectroscopy of several medium-mass deformed nuclei by studying the decay or proton and #alpha# nuclear spectroscopic data. Some new isomeric studies are established among which is the 31 y "1"7"8Hf isomeric state for which Isup(#pi#), K was determined to be 16"+, 16. A four quasi-particle configuration was assigned to this state at 2447.5 +- 2.5 KeV. Atomic masses have been calculated from various measurements and, on the basis of mass formulae extrapolated to neighboring mass regions.
Direct determination of "2"3"2U and its decay products in animal tissues appears to be feasible using an intrinsic Ge(Li) diode detector (for energies of 5-100 keV) and a NaI(Tl) anticoincidence-shielded Ge(Li) diode for higher-energy gamma photons. The detection sensitivity for "2"3"2U and "2"2"8Th is 0.03 and 0.01 nCi, respectively, using a 300-min counting time.
A helium-3 proportional detector was equipped with the experiment of Liaw-type electrolytic cell contained eutectic LiCl-KCl molten salt saturated by LiD electrolytic to collect the informations of the rate and the energy distribution of possible neutron produced during the electrolysis processes. For long time monitoring, the significant reproducible neutron bursts appeared at several runs of cells during electrolytic processing. The neutron counting rate increased about a factor of two above the level of the background measurement. The pulse height signals were verified of neutron energy ranging from thermal up to 350 keV. (author).
In order to obtain the resonance parameters in a single energy range and the corresponding covariance matrix, a reevaluation of 239Pu was performed with the code SAMMY. The most recent experimental data were analyzed or reanalyzed in the energy range thermal to 2.5 keV. The normalization of the fission cross section data was reconsidered by taking into account the most recent measurements of Weston et al. and Wagemans et al. A full resonance parameter covariance matrix was generated. The method used to obtain realistic uncertainties on the average cross section calculated by SAMMY or other processing codes was examined.
Q/sub ..beta..-values are determined for 18 nuclei (Zr-, Nb-, Mo-, Tc-, Ru- and Rh-nuclides) with mass numbers 101 less than or equal toA less than or equal to106 and A=109 from measurements of beta decay energies which were carried out at the LOHENGRIN mass separator at the Institut Laue-Langevin in Grenoble (France). The given Q/sub ..beta..-values between 2 and 8 MeV show errors of about 1.5% (with the exception of /sup 103/Zr and /sup 105/Nb resp. and /sup 103/Tc for which larger errors result due to statistical resp. systematic reasons): /sup 101/Zr 5500+-70, /sup 101/Nb 4580+-45, /sup 102/Zr 4670+-40, /sup 102/Nb 7230+-70, /sup 103/Zr 6790+-240, /sup 103/ 5740+-70, /sup 103/Mo 3575+-80, /sup 103/Tc 2585+-70, /sup 104/Nb 8250+-130, /sup 104/Mo 2180+-40, /sup 104/Tc 5520+-100, /sup 105/Nb 6570+-150, /sup 105/Mo 4885+-80, /sup 105/Tc 3750+-60, /sup 106/Mo 3515+-45, /sup 106/Tc 6540+-70, /sup 109/Ru 4150+-80, /sup 109/Rh 2550+-50 (all values in keV). For the ...
Q_#beta#-values are determined for 18 nuclei (Zr-, Nb-, Mo-, Tc-, Ru- and Rh-nuclides) with mass numbers 101 #<=# A #<=# 106 and A=109 from measurements of beta decay energies which were carried out at the LOHENGRIN mass separator at the Institut Laue-Langevin in Grenoble (France). The given Q_#beta#-values between 2 and 8 MeV show errors of about 1.5% (with the exception of "1"0"3Zr and "1"0"5Nb resp. and "1"0"3Tc for which larger errors result due to statistical resp. systematic reasons): "1"0"1Zr 5500#+-#70, "1"0"1Nb 4580#+-#45, "1"0"2Zr 4670#+-#40, "1"0"2Nb 7230#+-#70, "1"0"3Zr 6790#+-#240, "1"0"3 5740#+-#70, "1"0"3Mo 3575#+-#80, "1"0"3Tc 2585#+-#70, "1"0"4Nb 8250#+-#130, "1"0"4Mo 2180#+-#40, "1"0"4Tc 5520#+-#100, "1"0"5Nb 6570#+-#150, "1"0"5Mo 4885#+-#80, "1"0"5Tc 3750#+-#60, "1"0"6Mo 3515#+-#45, "1"0"6Tc 6540#+-#70, "1"0"9Ru 4150#+-#80, "1"0"9Rh 2550#+-#50 (all values in keV). For the measurement of beta-gamma coincidences a #DELTA#E/E-plastic ...
LUCIFER (Low-background Underground Cryogenic Installation For Elusive Rates) is a new project for the study of neutrinoless Double Beta Decay, based on the technology of scintillating bolometers. These devices promise a very efficient rejection of the alpha background, opening the way to a virtual background-free experiment if candidates with a transition energy higher than 2615 keV are investigated. The baseline candidate for LUCIFER is 82Se. This isotope will be embedded in ZnSe crystals grown with enriched selenium and operated as scintillating bolometers in a low-radioactivity underground dilution refrigerator. In this paper, the LUCIFER concept will be introduced. The sensitivity and the very promising prospects related to this project will be discussed.
The additional error in measurement of the thickness of Kh18N10T steel for possible changes in composition with an energy of the photons of ionizing radiation of 10-80 keV was evaluated. The desirability of use of a type REIS-I x-ray emitter in measurement of the thickness of steel up to 1 mm is shown. The instrument provides measurement of the thickness of steel in the 0.1-1.0 mm range with a reproducibility of the results with an error not exceeding 0.5-1.0%. The measurement error with corrugations characteristic of bellows does not exceed 5%.
High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.
An electrostatic beam steering mechanism (ESM) has been designed and tested to deflect negative ion beams consisting of multi-beamlets. A steering angle of 10 mrad was obtained within the deviation of less than 1 mrad by biasing two electrodes at 0.5 kV and -0.75 kV for 120 keV H{sup -} ion beam. The current flowing to the positive electrode was no more than 10% of the beam current at a pressure of 2.8x10{sup -5} Torr. (author)
Delayed neutron energy spectra have been measured for six delay-time intervals following the fast fission of "2"3"8U nuclei. The delay-time intervals span the range 0.17 to 10.2 seconds following initial fission while the measured spectra span neutron energies from 10 keV to 4 MeV. The experiment was performed utilizing the UMass/Lowell 5.5 MV Van de Graff accelerator to produce fast neutrons for inducing fission in a "2"3"8U lined fission chamber. The fission fragments were flushed via a helium jet stream to a well-shielded counting room where they were deposited onto a moving tape (magnetic audio tape) and transferred to a beta-neutron time-of-flight spectrometer. By adjusting the tape speed, composite delayed neutron time-of-flight spectra were measured for several different delay-time intervals. These measurements involved beta-neutron coincidences with "6Li-loaded glass scintillators for neutron energies from 10 keV to 450 ...
Hardened CMOS/SOI 29101 microprocessor, elementary cells and transistor shave been irradiated at levels between 10 Mrad(SiO_2) and 1 Grad(SiO_2) ("6"0Co and 10 keV x-rays). SIMOX buried oxide behavior in the range of 100 Mrad(SiO_2) and a channel-stopped MOS/SOI structure avoiding lateral leakage current are presented. These two items indicate the feasibility of a CMOS/SOI technology operating in the hundred Mrad(SiO_2) range.
CH Cygni is a symbiotic star consisting of an M giant and an accreting white dwarf, which is known to be a highly variable X-ray source with a complex, two-component, spectra. Here we report on two Suzaku observations of CH Cyg, taken in 2006 January and May, during which the system was seen to be in a soft X-ray bright, hard X-ray faint state. Based on the extraordinary strength of the 6.4 keV fluorescent Fe K-alpha line, we show that the hard X-rays observed with Suzaku are dominated by scattering.
The theoretical alignment limit for focused ion beam (FIB) implantation was deduced from the calculated resolution for the detection of an alignment mark. The alignment resolution varies with the signal to noise ratio and there is an optimum current which gives the best resolution. The alignment resolution epsilon/sub sigma/ is approximately 0.006 ..mu..m for a 160 keV Si/sup ++/ beam from our FIB implanter. The measured alignment error is approximately 0.06 ..mu..m and the main reason of this discrepancy is vibration. The ultimate limit on the alignment error can be reached through improvements in the implanter system.
We measured differential cross sections and vector analyzing powers for the "4"8Ca(d,n)"4"9Sc reaction at 79 MeV. An overall energy resolution of about 325 keV was achieved, and data were extracted for states up to 3.4 MeV of excitation. Both distorted-wave Born approximation and Johnson-Soper adiabatic approximation calculations were performed; in general, the Johnson-Soper adiabatic approximation calculations provide a better description of the data, and yield reasonable spectroscopic factors.
High-resolution neutron capture cross section measurements of 55Mn were recently performed at GELINA by Schillebeeckx et al. (2005) and at ORELA by Guber et al. (2007). The analysis of the experimental data was performed with the computer code SAMMY using the Bayesian approach in the resonance parameters representation of the cross sections. The neutron transmission data taken in 1988 by Harvey et al. (2007) and not analyzed before were added to the SAMMY experimental data base. More than 95% of the s-wave resonances and more than 85% of the p-wave resonances were identified in the energy range up to 125 keV, leading to the neutron strength functions S0 = (3.90 0.78) x 10-4 and S1 = (0.45 0.08) x 10-4. About 25% of the d-wave resonances were identified with a possible strength function of S2 = 1.0 x 10-4. The capture cross section calculated at 0.0253 eV is 13.27 b, and the capture resonance integral is 13.52 0.30 b. In the energy range 15 to 120 ...
The use of nitrogen ion implantation to increase the surface hardness of structural steels is well documented. Traditionally this involves the use of high energy nitrogen ion beams (approximately 100 keV), with a relatively low beam current density because high energy beams are necessary to produce the required penetration into the material to achieve a significant depth of hardened material. Hardening needs to occur in a region whose size is comparable with the scale of the deformation associated with the tribocontact. 100 keV nitrogen ions typically penetrate into steels only about 0.1 {mu}m and the range of possible tribological applications is thus restricted by this shallow treatment depth. In plasma nitriding processes the nitrogen ions approach the substrate with much lower energies but the ion currents are sufficiently high to cause considerable substrate heating. In this study an ion beam process has been used which more closely ...
In this experiment, we measured the detection efficiency of gamma-scanning system of Irradiated Materials Examination Facility (IMEF) in Korea Atomic Energy Research Institute(KAERI) for the spent PWR fuel and activity known sources with high activity. We measured the absolute detection efficiency of gamma scanning system of IMEF to the "1"3"7Cs-source with 10.4 GBq and "6"0Co source with 25.9 GBq High-activity sources as standard sources, and a fuel burned in the KORI -1 reactor of the Kori Nuclear power plant. In analyzing, we used three peeks those were the 661.64 keV peak form "1"3"7 Cs 1173.23 and 1332.51 keV"6"0 Co sources, and 14 peaks of "1"3"4Cs and "1"5"4Eu on the spent fuel gamma spectrum which are in the energy range from 500 to 1,600 keV. We find second order equations for detection efficiency by using our experimental results. The equation show that the detection efficiency of gamma scanning system for 1 MeV ...
In a positive polarity induction adder each of the induction cavities is a cathode, which emits electrons at a unique potential. These broad spectrum electrons strongly affect Magnetically Insulated Transmission Line (MITL) behavior. Electron flow decreases the cavity-to-MITL coupling efficiency, and reduces the power transport efficiency along the system. Also, the operating impedance of the MITL is lowered, reducing the diode impedance required for good coupling and good total system power efficiency. It is therefore imperative to understand the details of MITL electron flow. In previous work, measurement of MITL electron flow for a twenty-stage linear induction adder (Hermes III), operated in positive polarity, was compared with simulations. There was qualitative agreement, but some differences were noted. For example, measured electron flow in the first ...
The cross section database for electron impact excitation and electron impact ionization for hydrogen beam kinetic energies greater than 100 eV was considered, giving for each particular process a reference to a recommended publication of cross sections, as well as the accuracy or estimated accuracy. The work is motivated by the application of neutral beam injection in magnetic confinement devices, such as large tokamaks. 9 refs, 2 figs.
Electron Cyclotron Heating experiments have been performed on the TEXT tokamak using Varian gyrotron. Some degradation of electron energy confinement is observed for sawtoothing and non-sawtoothing discharges. Sharp electron temperature profiles are produced in high-q discharges by extremely localized ECH power deposition.
The electron-phonon coupling constant lambda has been calculated for vanadium. The electron energy bands and wave functions were obtained from a model augmented plane wave muffin-tin potential. The electron-phonon matrix elements were evaluated using the rigid-ion approximation and the measured phonon spectra. The results show that lambda is strongly affected by d-f scattering.
The salient features of the near-infrared free-electron laser (FEL) that is under construction at the new Darmstadt superconducting 130-MeV electron accelerator are discussed. Special attention is given to the layout and the parameters of the accelerator, the layout of the planned FEL experiment, the characteristics of the electron gun, the subharmonic chopper-buncher system, and the hybrid undulator system of the Darmstadt FEL. A comparison of the planned Darmstadt FEL with conventional lasers, with respect to the pulse and wavelength region, is presented. 15 refs.
In this note we describe a conceptual design of a part ofthe electron beam delivery system for FERMI@Elettra free electron laser(FEL) located between the end of the linac and the entrance to the FEL.This part includes the emittance diagnostic section, the electron beamswitchyard for two FELs called spreader and matching sections. The designmeets various constrains imposed by the existing and planned buildingboundaries, desire for utilization of existing equipment and demands forvarious diagnostic instruments.
The relativistic motion of an electron is numerically analyzed in a tokamak having macroscopic magnetic turbulence. Stochasticity induced by the relativistic motion overwhelms the phase averaging effect, which provides a tokamak with an effective loss mechanism for the avoidance/suppression of runaway electron generation at a major disruption. On the other hand, electrons in the KAM (Kolmogorov-Arnold-Moser) region will be observed as a runaway snake. (author)
The polarization characteristics of spontaneous radiation from relativistic electrons moving through helical and planar wiggler fields are evaluated for imperfect beam injection. Maximum coherent gain in free-electron laser systems are seen to occur in optical fields having these polarization characteristics rather than those of the wiggler magnets. Coupling coefficients for an electron beam skewed at an angle to the optical mode are presented.
We report the homodyne detection of phase modulation sidebands induced on a laser beam by a coherently bunched electron beam. This provides a sensitive and nonperturbing measurement of complex Fourier time series components of the electron density. A proof-of-principle measurement of the microwave frequency component of electron density in a crossed-field device, which agrees well with a calculation of the same quantity, is reported.
A physical model of free-electron laser (FEL) amplifier with variable-parameter wiggler magnets for one-dimensional numerical simulation is presented and a numerical example is given. The wiggler parameters, efficiency of energy conversion between electron beam and laser field, laser intensity, phase-space distributions and energy spectrum of electrons are computed. The period of synchronous oscillation and saturation value of laser intensity agree with estimated one.
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
During the period covered by this report research has been concerned with the study of photo-induced electron transfer reactions from porphyrins to acceptor molecules with time-resolved Electron Paramagnetic Resonance (EPR) methods. Excited-state electron transfer reactions are of importance from a fundamental point of view and in connection with applications in homogeneous and heterogeneous photosensitization, photopolymerization, and solar energy conversions. For this reason, the study of photo-induced electron transfer reactions is of considerable interest.
Using the experimentally determined cutoff energies of the muon-electron and the pion-electron conversion curves in a tachyon-bradyon model of the electron and the muon, the magnetic moments of these particles have been derived and found to be the Bohr magnetons identically. The tachyons, being bound to the bradyons and unable to drop below the speed of light, cause the bradyons to revolve in an orbit. It is this orbital motion of the charged bradyons that generates the magnetic moments.
A review of the information on the electron and phonon spectra in the A-15 compounds and Chevrel phase superconductors obtained from nuclear magnetic resonance, heat capacity, and Moessbauer effect experiments is presented. Relationships of the Fermi energy electrons and the soft phonons to the strength of the electron-phonon interaction are discussed.
A review of the information on the electron and phonon spectra in the A-15 compounds and Chevrel phase superconductors obtained from nuclear magnetic resonance, heat capacity, and Moessbauer effect experiments is presented. Relationships of the Fermi energy electrons and the soft phonons to the strength of the electron-phonon interaction are discussed.
Characterization and optimization of electron-beam parameters are important aspects of optimizing free-electron laser (FEL) performance. The visible spontaneous emission ({lambda}{approximately}650 nm) from the 5-meter long undulator of the Boeing FEL experiment can be characterized in sufficient detail with a streak/spectrometer to deduce time-resolved electron-beam spatial position and profile, micropulse duration, and energy. 7 refs., 13 figs., 2 tabs.
The original purpose of this research was an investigation into the use of slow space charge waves on weakly relativistic electron beams for ion acceleration. The work had three main objectives namely, the development of a suitable ion injector, the growth and study of the properties of slow space charge waves on an electron beam, and a combination of the two components parts into a suitable proof of principle demonstration of the wave accelerator. This work focusses on the first two of these objectives.
Spontaneous radiation emitted from relativistic electrons undergoing betatron motion in a plasma-focusing channel is analyzed, and applications to plasma wake-field accelerator experiments and to the ion-channel laser (ICL) are discussed. Important similarities and differences between a free electron laser (FEL) and an ICL are delineated. It is shown that the frequency of spontaneous radiation is a strong function of the betatron strength parameter a(beta), which plays a role similar to that of the wiggler strength parameter in a conventional FEL. For a(beta) > or approximately 1, radiation is emitted in numerous harmonics. Furthermore, a(beta) is proportional to the amplitude of the betatron orbit, which varies for every electron in the beam. The radiation spectrum emitted from an electron beam is calculated by averaging the single-electron spectrum over the ...
In this study three types of scanning electron microscopes were used for the size determination of spermatozoa of sterlet Acipenser ruthenus - high vacuum scanning electron microscope (SEM, JEOL 6300), environmental scanning electron microscope (ESEM, Quanta 200 FEG), field emission scanning electron microscope (FESEM, JEOL 7401F) with cryoattachment Alto 2500 (Gatan) and transmission electron microscope (TEM, JEOL 1010). The use of particular microscopes was tied with different specimen preparation techniques. The aim of this study was to evaluate to what degree the type of used electron microscope can influence the size of different parts of spermatozoa. For high vacuum SEM the specimen was prepared using two slightly different procedures. After chemical fixation with 2.5% glutaraldehyde...
The proposal made in this paper refers to a free electron laser FEL with small-period electromagnet undulator in SASE regime and a FEL transverse optical klystron in the amplifier regime. The relativistic electron beam source for this FEL is the 7 MeV electron linac of the National Institute for Laser, Plasma and Physics Radiation (NILPRP) in Bucharest. The paper presents the main features of the design and performance of both FELs and discusses the improvements which must be made to the accelerator in order to use it as a free electron source concerning the injection system of electrons and formation of accelerated electron beam. The findings show that this FEL can be employed as a coherent radiation source in the IR range. (author)
This article reports research findings related to converging formats, media, practices, and ideas in the process of academics' interaction with electronic texts during a research project. The findings are part of the results of a study that explored interactions of scholars in literary and historical studies with electronic texts as primary materials. Electronic texts were perceived by the study participants as fluid entities because the electronic environment promotes seamless interactions with a variety of media and formats. Working with electronic texts combines some traditional information and research practices into new patterns of information behavior. The practice called "netchaining" combines aspects of networking with information-seeking practices to establish and shape online information chains, which link sources and people. Different forms of exploration of participants' ...
In the previous paper, we have derived a dispersion relation for the free electron laser (FEL) gain in the exponential regime taking account the diffraction and electron`s betatron oscillation. Here, we compare the growth rates obtained by solving the dispersion relation with those obtained by simulation calculation for the waterbag and the Gaussian models for the electron`s transverse phase space distribution. The agreement is found to be good except for the limiting case where the Rayleigh length is much longer than the gain length (1-D limit). We also generalize the analysis to the case where the electron beam cross section is elliptical as is usually the case in storage rings, and derive the first-order dispersion relation.
In order to obtain the electronic structure of leucine (Leu) in aqueous solution, we studied three systems: Leu+7H2O, Leu+8H2O and Leu+9H2O. The results indicated that the system Leu+8H2O was the only choice which was both acceptable and doable: its computational effort was affordable, and it could simulate a main part of the solvent effect on the electronic structure of Leu in solution. Based on the system Leu+8H2O, all-electron, ab initio calculations were performed to construct an equivalent potential of water for the electronic structure of Leu with dipoles. The results showed that the main effect of water on the electronic structure of Leu was raising the occupied states about 0.0824 Ry on average, and broadening the energy gap by 11%. The water effect on the electronic structure of L...
This is the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The main objective of this project was to engineer and procure an electron beamline compatible with the operation of a 1-kW free-electron laser (FEL). Another major task is the physics design of the electron beam line from the end of the wiggler to the electron beam dump. This task is especially difficult because electron beam is expected to have 20 kW of average power and to simultaneously have a 25% energy spread. The project goals were accomplished. The high-power electron design was completed. All of the hardware necessary for high-power operation was designed and procured.
A technique capable of measuring the electron energy fluence spectra in a scattering medium was designed. These measurements were performed by setting a bremsstrahlung conversion target on the surface of a phantom, at an intermediate depth, and at a depth equal to electron mean range. The bremsstrahlung produced by the deceleration of electrons in the target was passed through an air channel in the phantom and passed forward by a pinhole collimator into a Na(Tl) detector. The measured pulse height data were unfolded to correct for the distortion of the spectrometer system by using the FORIST unfolding code. The unfolded bremsstrahlung spectra represent the electron energy fluence spectra convolution with the bremsstrahlung produced in the target. To generate the electron energy fluence spectra, the unfolded bremsstrahlung spectra were deconvoluted by using the MAZE2 unfolding code. ...
The description and results of the study on the free-electron laser (FEL) on 100 #mu#m, representing the first line of the FIAN multipurpose radiation complex, are presented. The electron beam with the energy of 6-8 MeV, once accelerated in a racetrack microtron and extracted into the FEL injection tract, is used for exciting this FEL. The system of the electron beam transport, injection and diagnostics are described. Additional works on increasing the beam emittance up to 0.4 A for one energy spread percent are carried out. The obtained electron beam parameters assure generation of the far infrared radiation in the FEL
The most propagated mechanisms of stimulated radiation of electron beam such as Cherenkov one-particle and collective effects, ondulator and magnetic bremsshrahlung radiations, Doppler anomalous effect, Thompson and Raman scattering and radiation are discussed. Relation of spontaneous radiation mechanisms of individual electron and stimulated radiation effects in electron beams has been elucidated, grounds of linear electrodynamics of radiative beam instabilities are stated, and main mechanisms of their nonlinear stabilization are elucidated as well. Various simulated processes in electron beams are considered from the unique point of view using a simple mathematical apparatus and such physical laws as conservation and Newton laws.
Energy deposition process by relativistic fast electrons produced by ultra-intense laser pulses is discussed. The process is calculated with a two dimensional Fokker-Planck simulation code including binary and collective collisions coupled with electromagnetic field. We focused on Velocity Distribution Function (VDF) dependence in the simulation. The results show that the spread angle of the fast electrons distribution affects energy deposition area and deposited energy is concentrated in the vicinity of the propagation axis of the fast electrons. It may be also suggested that self-pinch effect of a fast electron beam causes large deposition energy. (author)
...Section 508 and Electronic Information Technology Accessibility at EPA | US EPA Jump to main content. Section 508 and Electronic Information Technology ...Us Search: All EPA Advanced search You are here: EPA Home Section 508 and Electronic Information Technology Accessibility at EPA Welcome to the United ... Section 508 of the Rehabilitation Act mandates that Federal departments and agencies make electronic and information technology (EIT) accessible to individuals ... Achieving compliance with Section 508 is an ongoing process. If you have any problems or questions about accessing information on a particular ...
Progress in calculating the electron-phonon parameters of transition metals has been based on either the rigid muffin-tin approximation (RMTA) or the fitted modified tight-binding approximation (FMTBA). The RMTA has been shown to be remarkably accurate for average electron-phonon properties, but there are indications that RMTA matrix elements may be too small at low momentum transfer. An attempt is made to demonstrate these assertions concerning the accuracy of RMTA and the numerous electron-phonon calculations are placed in a broader perspective by a demonstration of how they can be used to explain the trends in the strength of the electron-phonon coupling among the transition metals and the A-15 compounds. (GHT)
A study was made on the effect of 3.5 MeV electron irradiation on the properties of light-emissive structure based on GaAlAs. It is shown that a considerable decrease in the emitted light intensity as a result of electron irradiation not accompanied by changes in recombination- and electric properties of the mentioned structures. It is established by the electron-microscopy and Auger-spectroscopy meazurements that electron irradiation causes the occurrence of regions of free aluminium clusters on the external surface of the structure n-layer. The number and the sizes of the regions depend on the electron doze. It was assumed that the mentioned regions can play a role of attenuation filter for the light emitted by the structure.
The existence of a narrow peak in the electronic density of states in A-15 compounds is explained by a strong electron--phonon interaction that leads to the polaron narrowing of the band. An analytic expression relating the transition temperature T/sub c/ to the phonon spectrum is derived under the assumption of a weak and an intermediate-strength coupling. The model allows the explanation of the correlation of T/sub c/ with the number of electrons per atom, the temperature dependence of the resistance, the magnitude and temperature dependence of the magnetic susceptibility, and the electronic specific heat.
We have constructed an apparatus to study electron impact ionization of ions which should provide additional insight into the mechanisms involved. Using multiparameter coincidence techniques, we will detect both outgoing electrons from ionization process and will be able to analyze the momenta of both particles simultaneously. Coupled with a high resolution electron gun, this information should have broad application to the difficult problem of three bodies interacting via the long range Coulomb force. If sufficient accuracy can be achieved, information regarding the relative phase of the outgoing electron wavefunctions can be obtained.
Self-magnetically insulated, high-voltage transmission lines are used in inertial confinement fusion particle accelerators in order to transmit power from the vacuum insulator to the diode. This paper describes a time-dependent 2-D code (MITL) for calculating (for planar or triplate geometries) the motion of test electrons through the tapered input or output convolutes of such lines. MITL results show that the electron canonical momentum in the direction of the flow changes as the electron passes through the convoluted geometry; it is suggested that these electrons lead to losses observed in long self-magnetically insulated lines.
In a free electron laser (FEL), the electron bunch energy profile at the undulator entrance can have temporal structures. In this paper, we derive analytical expressions for the FEL in the undulator, in the case of the electron bunch having both energy chirp and energy curvature. The FEL properties are studied analytically by convoluting a Gaussian seed laser with the FEL Green's function obtained by solving the coupled Vlasov-Maxwell equations. In particular, for different ratios of the temporal duration of the seed laser and that of the Green's function, interesting behavior is revealed.
Measurements of the expansion rate of pure-electron plasmas have been performed on the Electron Diffusion Gauge (EDG) device at background helium gas pressures in the 5 x 10(superscript -8) Torr to 1 x 10(superscript -5) Torr range, where plasma expansion due to electron-neutral collisions dominates over plasma expansion due to trap asymmetries. It is found that the expansion rate, defined as the time rate of change of the particles' mean-square radius, scales approximately linearly with pressure and inversely as the square of the magnetic field strength in this regime, in agreement with classical predictions.
Here I provide a brief overview of recent experimental gas-phase measurements using the Selected-Ion Flow Tube or SIFT technique at 294#+-#2 K with helium buffer gas at 0.35 Torr for reactions which remove electrons from the C_6_0 molecule or donate electrons to singly and multiply-charged C_6_0 cations. The results of these measurements have provided new insight into physicochemical aspects of electron transfer and have revealed the occurrence of unprecedented electron transfer reactions at thermal energies. (author).
The motivation for using a tandem electrostatic accelerator as an electron accelerator for a free electron laser (FEL) is presented. The adaptation of the HVEC EN tandem at the Weizmann Institute for this purpose, electron beam optics and nonlinear FEL computation relevant for this FEL realization are described. In the tandem configuration the terminal is held at a positive potential. The electron beam is accelerated from ground potential to the terminal in one beam tube and then decelerated down the other beam tube. The FEL wiggler and cavity are at the terminal. Due to the beam energy recovery this scheme produces a high power beam at the terminal with a small investment in electrical power. (orig.).
An alkali-like ion interaction with inner electrons of an alkali-like ion leads to a significant increase in the photoionization cross section of the outer s electron. This occurs not only for ground-state ions with one s electron in the outer shell, but also when the outer s electron is in an excited state. The reason for this amplification, in addition to coherent enhancement in summing of the correlation amplitudes, is that the zero in the direct amplitude occurs below threshold. This leads to a constructive interference with the correlation amplitude above the photoionization threshold, in contrast to a destructive interference in the case of a neutral atom with the same electronic configuration, for which the zero occurs above threshold. Results of this research were published.
A high-power microwave Free Electron Laser (FEL) experiment has been performed to study the inherent electron beam bunching that occurs in the FEL interaction. An induction linac delivered a 1 kA, 2.2 MeV electron beam to a FEL amplifier. In the process of amplifying the input signal of frequency 35 GHz to power levels of the order of 10 MW, the electron beam was bunched by the ponderomotive force. In this paper we describe the FEL experiment and the optical technique that was used to observe the bunches. Their properties as functions of the basic FEL parameters are discussed. copyright 1996 American Institute of Physics.
In the case of total skin electron therapy without the beam guide, the electron beam is scattered just outside the gantry exit, dose uniformity in the field is broken, and dose is spread outside the light field. The aims of this study were to measure the mean energy of the off-axis incident electron beam without the beam guide and to establish a reference for the clinical situation. For the measurement, a 4 MeV electron beam was selected among several energies from the linear accelerator. A scintillating fiber beam energy monitor measured the mean energy of the incident electron beam. This energy monitor is a small, light-weight piece of equipment composed of a wedge absorber, scintillation fiber, and photodiode. We found the relationship between electron energy and the indicated value of the energy monitor by means of the estimation of correction factors for ...
The use of primary electron counting techniques as an alternative to the more usual parallel plate avalanche chamber that has been employed in soft x-ray scattering experiments is being investigated at the National Synchrotron Light Source. The theoretical aspects of primary electron counting and motivation behind building a primary electron counting detector are described, as well as characteristics and future improvements of the device constructed at the NSLS. The detector consists of a low electric field drift region and a low pressure multistep avalanche region which can be operated with two or three stages of electron multiplication. The device has worked well in extensive tests as a simple parallel plate avalanche chamber, providing energy resolutions of 58% and 43% at 277 and 500 eV, respectively. Operated as a primary electron counter, preliminary results show an energy ...
Autoionizing and Auger transitions in atomic manganese and samarium have been experimentally investigated by observation of the ejected electrons in the energy region 0 to 40 eV following electron impact excitation with incident beams in the energy range 15-500 eV. Seventy-four spectral features are tabulated for manganese and a number of new assignments have been made based on pseudo-relativistic Hartree-Fock calculations and quantum defect analysis. A similar study of samarium reveals only a number of broad features in the ejected-electron energy range 8-10 eV. Three features have been observed consistently in the ejected-electron spectrum of samarium and assigned by comparison with previous work. (author).
The authors have measured the relaxation time of hot electrons in short pulse laser-solid interactions using a picosecond time-resolved x-ray spectrometer and a time-integrated electron spectrometer. Employing laser intensities of 10{sup 17}, 10{sup 18}, and 10{sup 19} W/cm{sup 2}, they find increased laser coupling to hot electrons as the laser intensity becomes relativistic and thermalization of hot electrons at timescales on the order of 10 ps at all laser intensities. They propose a simple model based on collisional coupling and plasma expansion to describe the rapid relaxation of hot electrons. The agreement between the resulting K{sub {alpha}} time-history from this model with the experiments is best at highest laser intensity and less satisfactory at the two lower laser intensities.
This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The primary aim of this project is to obtain a basic scientific understanding of electrical transport processes at interfaces that contain an organic electronic material. Because of their processing advantages and the tunability of their electronic properties, organic electronic materials are revolutionizing major technological areas such as information display. We completed an investigation of the fundamental electronic excitation energies in the prototype conjugated polymer MEH-PPV. We completed a combined theoretical/experimental study of the energy relation between charged excitations in a conjugated polymer and the metal at a polymer/metal interface. We developed a theoretical model that explains injection currents at polymer/metal interfaces. We have made ...
Studies of Rydberg-atom destruction in collisions with the polar targets CH_3I and CH_2Br_2 for values of principal quantum number n in the range 100--400 are reported. Analysis of the data using the essentially-free-electron model suggests that, for ultralow electron energies (#approx#80 #mu#eV to 1 meV), the cross section #sigma#(var-epsilon) for rotationally inelastic scattering of electrons by a polar target varies approximately as 1/var-epsilon, where var-epsilon is the electron energy. The Born approximation does not predict such behavior at very low collision energies, and possible reasons for this discrepancy are discussed.
This grant has focused on the study of several aspects of electron kinetics in low pressure plasmas. Entirely new effects arise from the fact that the electron kinetics is governed by non-local effects, in which the electron distribution function is not equilibrium with the local electric field but is governed by spatial transport effects. In this grant, we were able to demonstrate several previously un-studied effects which are a direct result of the nonlocal transport. These are: (1) The existence of a ''convective cell' in electron phase space. The phenomenon was observed and studied in CW plasma conditions. (2) The occurrence of non-collisional cooling of electrons through an effect known as ''diffusive cooling''.
Tokamaks with sufficiently strong supplementary heating develop non-Maxwellian electron velocity distributions. Because the absorption of electron cyclotron power is proportional to #nabla#_Vf, even small deviations from a Maxwellian distribution can significantly affect power deposition. Following an approach used to study microinstabilities in a plasma with an arbitrary, numerically specified, electron distribution, we have developed a computational module to study electron cyclotron power deposition in plasmas that have distributions motivated by those in actual tokamaks. Also, we compare the deposition results obtained using an energy balance approach with those obtained using a Taylor expansion of the dielectric tensor. We illustrate the limitations of the latter approach.
In a sufficiently large cluster of several polar molecules, collective interactions lead to localization or 'solvation' of electrons. The existence of the solvated electron is known since 1863 in liquid ammonia and since 1962 for liquid water. In 1984, electron localization in clusters was experimentally demonstrated in (H_2O)_N_#>=#_1_1 and (NH_3)_N_#>=#_3_4 clusters. In cooperation with K. Bowen, we recently initiated a test of the theory of electron binding by a dipole and a new ground state dipole bound dimer anion, (H_2O..NH_3), was predicted and observed. We here describe results of a search for new dipole-bound and solvated electron systems. (author).
The development and occurrence of new electron accelerators and applications are according to the human society development law, as a whole. The period of economic standstill is generating an intense creative activity in the domain of science and engineering which also resulting in great achievements in the field of electron accelerators. This paper presents the basic principle of the electron beam applications and the accelerators required characteristics for their present and potential applications in the domains: radiation sources, diagnostics, radiation processing, energetics, environment, defense and basic sciences. All these are correlated to the new generation of accelerators which, for the acceleration process, may employ electromagnetic fields generated by standard sources, atomic lasers, free electron lasers, Cerenkov effect, Smith - Purcell effect, electron beams, plasma, ...
We study the three-nucleon force in chiral effective field theory with explicit {delta}-resonance degrees of freedom. We show that up to next-to-next-to-leading order, the only contribution to the isospin symmetric three-nucleon force involving the spin-3/2 degrees of freedom is given by the two-pion-exchange diagram with an intermediate delta, frequently called the Fujita-Miyazawa force. We also analyze the leading isospin-breaking corrections due to the delta. For that, we give the first quantitative analysis of the delta quartet mass splittings in chiral effective field theory including the leading electromagnetic corrections. The charge-symmetry breaking three-nucleon force due to an intermediate delta excitation is small, of the order of a few keV.
A significant amount of X-rays were detected as a leakage from some of the Crooke`s tubes which were used in the teaching of science at junior and senior high schools in Japan. We measured the leaked dose of X-rays from the Crooke`s tubes with ionizing chambers, film badges and TLDs. The maximum leaked dose at 5cm distance from those tubes was estimated 143mSv/h. The effective energy of leaked X-rays was 19.3keV. The maximum dose of students exposed during the teaching of science were estimated 0.15mSv per experiment, which exceeded the value recommended in the ICRP publication 36. (author)
The neutron capture cross-section of {sup 234}U has been measured for energies from thermal up to the keV region in the neutron time-of-flight facility n-TOF, based on a spallation source located at CERN. A 4{pi} BaF{sub 2} array composed of 40 crystals, placed at a distance of 184.9 m from the neutron source, was employed as a total absorption calorimeter (TAC) for detection of the prompt {gamma}-ray cascade from capture events in the sample. This text describes the experimental setup, all necessary steps followed during the data analysis procedure. Results are presented in the form of R-matrix resonance parameters from fits with the SAMMY code and compared to the evaluated data of Endf in the relevant energy region, indicating the good performance of the n-TOF facility and the TAC. (authors)
We propose an X-ray mission called Xenia to search for decaying superweakly interacting Dark Matter particles (super-WIMP) with a mass in the keV range. The mission and its observation plan are capable of providing a major break through in our understanding of the nature of Dark Matter (DM). It will confirm, or reject, predictions of a number of particle physics models by increasing the sensitivity of the search for decaying DM by about two orders of magnitude through a wide-field imaging X-ray spectrometer in combination with a dedicated observation program. The proposed mission will provide unique limits on the mixing angle and mass of neutral leptons, right handed partners of neutrinos, which are important Dark Matter candidates. The existence of these particles is strongly motivated by observed neutrino flavor oscillations and the problem of baryon asymmetry of the Universe. In super-WIMP models, the details of the formation of the cosmic web are different from ...
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).
A technique has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb and Cs). The method is based on the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag or other metal powders. The following intensities are typical of those observed from carbonate samples subjected to approx. = 3 keV cesium ion bombardment: Li/sup -/: greater than or equal to 0.5 ..mu..A; Na/sup -/: greater than or equal to 0.5 ..mu..A; K/sup -/: greater than or equal to 0.5 ..mu..A; Rb/sup -/: greater than or equal to 0.5 ..mu..A; Cs/sup -/: greater than or equal to 0.2 ..mu..A.
Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.
The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.
We have monitored a Type II outburst of the Be/X-ray binary MXB 0656-072 in a series of pointed RXTE observations during October through December 2003. The source spectrum shows a cyclotron resonance scattering feature at 32.8 +/- 0.5 keV, corresponding to a magnetic field strength of (3.67 +/- 0.06) x 10^12 G and is stable through the outburst and over the pulsar spin phase. The pulsar, with an average pulse period of 160.4 +/- 0.4 s, shows a spin-up of 0.45 s over the duration of the outburst. From optical data, the source distance is estimated to be 3.9 +/- 0.1 kpc and this is used to estimate the X-ray luminosity and a theoretical prediction of the pulsar spin-up during the outburst.
Studies on the separation of Ag(I) during the recovery of Pu from analytical waste generated during potentiometric determination of Pu using AgO as oxidant, by precipitation of Pu as ammonium plutonium (III) oxalate have shown that most of the Ag(I) is separated during the reduction of Pu to Pu(III) state by ascorbic acid. A decontamination factor of 54 was obtained. Additional a decontamination factor of 5.8 was obtained during the precipitation of Pu as ammonium plutonium (III) oxalate. The Ag content was determined by gamma spectrometry, using "1"1"1Ag as a tracer (T_1_/_2 7.45 d, #gamma# 342.1 keV) and HPGe as detector. The studies indicate that Ag is preferentially separated almost quantitatively during the recovery of plutonium, when acidity adjustment is done with NaOH instead of NH_3. (author)
The energy level schemes of /sup 192/Os and /sup 192/Pt have been established on the basis of ..gamma..-..gamma.. coincidence studies using a dual parameter data collection system. Ge(Li) detectors were employed to study the gamma spectra produced in the E.C. and ..beta../sup -/ decays of /sup 192/Ir to /sup 192/Os and /sup 192/Pt, respectively. Thirteen new transitions and three new levels at 1146.95, 1237.35 and 1913.76 keV are suggested. Relative intensities from singles measurements, branching ratios, ..cap alpha..(K) and log ft values were calculated and multipolarities, spins and parities deduced. Comparisons are made with predictions of the Interacting Boson Model calculated on the basis of an O(6) to SU(3) transition.
The energy level schemes of "1"9"2Os and "1"9"2Pt have been established on the basis of #gamma#-#gamma# coincidence studies using a dual parameter data collection system. Ge(Li) detectors were employed to study the gamma spectra produced in the E.C. and #beta#"- decays of "1"9"2Ir to "1"9"2Os and "1"9"2Pt, respectively. Thirteen new transitions and three new levels at 1,146.95, 1,237.35 and 1,913.76 keV are suggested. Relative intensities from singles measurements, branching ratios, #alpha#(K) and log ft values were calculated and multipolarities, spins and parities deduced. Comparisons are made with predictions of the Interacting Boson Model calculated on the basis of an O(6) to SU(3) transition. (orig.).
The dependence of the efficiency of a coaxial IGC-30 Ge detector on the direction of gamma quanta entry, their energy and the distance from the source is examined. A set of point sources QCR-2 (Amersham, UK) has been used which is arranged consecutively in two perpendicular planes passing through the detector axis, at a distance of 0.1 - 1.3 m (pace 0.1) from its geometric centre for 16 different angles in every plane. Dependence curves of the efficiency on the angle of gamma-quanta hits are obtained for energies 60, 81, 122, 356, 662, 834, 1173 and 1332 keV. Changes in efficiency connected with spatial dividing ability are found out. Using the least squares' method the expected spatial distribution of efficiency is examined with a level of authenticity P > 0.9. The possible causes for the efficiency change and its possible effect on the measurements' precision are discussed. (author).
We have studied, by a Monte Carlo simulation code ACAT-DIFFUSE, the fluence-dependence of the amount of retained helium atoms in tungsten carbide at room temperature under helium ion bombardment. The retention behavior may be understood qualitatively in terms of irradiation-dependent diffusion coefficient assumed and range. The emission processes from tungsten carbide under helium ion irradiation derived were compared with each other. We have discussed the retention curves for incident energy of 5 keV at incident angles of 0deg and 80deg and of 500 eV at 0deg. The energy spectra of helium atoms reflected from tungsten carbide for incident energy of 500 eV at 0deg and 80deg were compared with those from graphite and tungsten. (author)
He ions incident at grazing angles on Cu(110) and Ni(110) surfaces are neutralised into triplet and singlet states, of which the 3p, 3d and 4d upper states are accessible to optical spectroscopy. In the energy range from 500 eV to 15 keV no significant energy dependence of the relative intensities of singlet and triplet lines was observed for scattering on Cu(110). The intensities from Ni(110) are higher and the singlet to triplet intensity ratio of the 3d to 2p transition is about 6% smaller than that from Cu(110). The results can be explained well by assuming resonant charge capture into excited He and intermediate formation of negative He/sup -/ states.
He ions incident at grazing angles on Cu(110) and Ni(110) surfaces are neutralised into triplet and singlet states, of which the 3p, 3d and 4d upper states are accessible to optical spectroscopy. In the energy range from 500 eV to 15 keV no significant energy dependence of the relative intensities of singlet and triplet lines was observed for scattering on Cu(110). The intensities from Ni(110) are higher and the singlet to triplet intensity ratio of the 3d to 2p transition is about 6% smaller than that from Cu(110). The results can be explained well by assuming resonant charge capture into excited He and intermediate formation of negative He"- states. (orig.).
The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).
A brief survey is presented of the methods of preparation and of the applications of radiopharmaceuticals labelled with short-lived positron radionuclides "1"1C, "1"8F, "1"3N and "1"5O which, thanks to their energy level schemes, short half-life and the 511 keV photon radiation energy are almost ideal tracers in modern nuclear medicine and pharmacology. In conjunction with computerized tomography, they represent one of the most sensitive diagnostic imaging methods, the so-called positron emission tomography. In addition, their incorporation in the molecule of a pharmaceutical does not change the biological and chemical properties of the original molecule unlike those of radiopharmaceuticals labelled with technetium, iodine, etc. (author). 125 refs.
P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.
TiH{sub 2} and TiD{sub 2} thick targets were bombarded with 100 to 200 keV protons. Evidence for nuclear reactions was obtained by means of a surface barrier particle detector. Proton irradiation of TiD{sub 2} produced the following observations: {alpha} particle emission identified as (p, {alpha}) reactions from {sup 11}B and {sup 7}Li impurities in the target at ppm concentrations; and {approx}3 MeV proton and {approx}1 MeV triton emission from secondary D-D reactions caused by elastic scattering of the primary proton with a target deuteron. A 3.9 MeV {alpha} particle peak measured by others was not observed. (author)
The fully depleted pn-junction charge coupled device (pn-CCD) has been developed as a detector for X-ray imaging and high-resolution spectroscopy for the X-ray satellite missions XMM and ABRIXAS. If the detector is exposed to a particle radiation environment, the energy resolution is degraded due to charge transfer losses and a dark current increase. In a first experiment, prototype devices were irradiated with 10 MeV protons. After completion of the detector development, the proton irradiation was repeated for a quantitative study of the radiation damage, relevant for the satellite missions. The irradiation test was extended by a 5.5 MeV {alpha}-particle and a 6 keV X-ray exposure of the pn-CCD, including the CAMEX preamplifier chip.
Elastic scattering cross sections of keV protons in solids (Z=3-82) are calculated using the partial wave expansion technique and the ''muffin-tin'' bound-atom potential. The differential cross sections for small scattering angles of less than 10deg are smaller than those with the Ziegler-Biersack-Littmark potential at all energies and for all solids, although, for larger angles, the two cross sections agree with each other. The mean free paths of the protons in the solids, obtained from the total cross sections, decrease very slowly with decreasing energy. Furthermore, at low energies they approach half the nearest-neighbor distance, which is taken as the radius of the augmented plane wave sphere in the muffin-tin model of crystalline solids. (orig.).
A time-reversal-violating spin-correlation coefficient in the total cross section for polarized neutrons incident on a tensor rank-2 polarized target is calculated by assuming a time-reversal-noninvariant, parity-conserving ``five-fold" interaction in the neutron-nucleus optical potential. Results are presented for the system $n + {^{165}{\\rm Ho}}$ for neutron incident energies covering the range 1--20 MeV. From existing experimental bounds, a strength of $2 \\pm 10$ keV is deduced for the real and imaginary parts of the five-fold term, which implies an upper bound of order $10^{-4}$ on the relative $T$-odd strength when compared to the central real optical potential.
The Sputter coefficient of accelerated CO{sub 2} cluster ions hitting surfaces of various materials is investigated. For copper it varies proportional to the 2nd power of the energy between 155 and 260 keV. The rate of erosion for different target materials varies by two orders of magnitude from tungsten to PMMA. Diamond is eroded fairly quickly, while aluminum is eroded less than corundum (Al{sub 2}O{sub 3}). No simple correlation of the sputter coefficient on the bulk material properties is found. For copper the angular distribution of sputtered material is measured and found to be following roughly a cosine distribution. By using masks different microstructures have been produced in cobalt-samarium magnets, diamond and glass. (orig.)
The measurement of level in the liquid nitrogen vessel has been carried out by the weight conversion method using weigher or by putting directly a stick in the vessel. On a large CE tank, the pressure difference was read by manometer. These methods can not be used when the vessel does not put on the weigher or the pipe for manometer is stopped. We noticed the interaction between radiation ({gamma}-ray) and substance and applied it to determine the liquid nitrogen level. The results proved it the easy method for measurement of the level in the large CE tank. Cesium 137 ({gamma}-ray energy: 662 keV) was used as the radiation source. {gamma}-ray transmission dose was determined by GM survey meter. The liquid nitrogen level could be determined by using the change of the transmission dose with amount of liquid nitrogen. (S.Y.)
An 80 keV, 3.6 MW neutral beam injection system has recently been installed on Doublet III, and the installation of a second system is scheduled within several months. Armor plate consisting of /approximately equals/100 graphite tiles (10 cm x 10 cm) coated with TiC has been plated over portions of the inner vacuum wall lying in the line of sight of the ion sources. In order to monitor the condition of the armor plate an infrared camera and a set of optical pyrometers have been installed alongside the beamline and view the armor plate through a CaF/sub 2/ window. The pyrometers measure the temperature of the armor plate associated with the maximum of the intensity distribution of each ion source.
It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
The g-factor of the 21/2/sup +/ state at 1921.9 keV in /sup 203/Pb has been measured through the time differential perturbed angular distribution technique in an external magnetic field B=2.028 T. The measured g-factor g=-0.063(2) indicates a predominantly three neutron hole configuration described by the wave function 0.68vertical strokei/sup -1//sub 13/2/f/sup -2//sub 5/2/>+-0.73vertical strokei/sup -1//sub 13/2/f/sup -1//sub 5/2/p/sup -1//sub 3/2/>.
Data from Monte Carlo transport codes are used to model radiobiological effects. We previously reported the Fourier analysis of ionization data generated by simulating a 500-keV proton traversing water. Here, we extend Fourier analysis to energy transfer data of another radiation type, a 14-MeV #alpha#-particle. A radiobiological model based on this frequency-domain analysis views cell as an information processing system . It lends itself naturally to traditional engineering analyses. One engineering principle-the output response of a linear system to random signal-is applied here to explain the fact that there is measurable difference in the magnitude of the biological effectiveness when a given biological system is irradiated with two different radiation types of the same Linear Energy Transfer (LET).
Focused ion beam (FIB) micromachining has been used to produce inclined planes on semiconductor surfaces. A 10 keV FIB system, utilising a Ga"+ liquid metal ion source (LMIS), was employed. The ramped surfaces were prepared by digitally deflecting the ion beam in a serpentine fashion over a rectangular area and incrementing the time the beam spends at a pixel, dwell time, line by line. For the conditions used, control in micromachining the inclination of the ramps to the starting horizontal surface is of the order of 1 arc s per scan of the FIB over the area of interest. The possibility of using such surfaces prepared by FIB, along with vacuum growth techniques such as molecular beam epitaxy (MBE), for application to strain relief structures and lateral device production is discussed. (author).
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).
The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 {mu}m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga{sup +} focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.
N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code
The intermediate valent behaviour of YbPd_2Si_2 has been studied under pressure in the temperature range from 1.2 K to 90 K by using the 84 keV Moessbauer transition in "1"7"0Yb. At 54 kbar and 4.2 K we obtain an increase of the electric field gradient (EFG) by a factor of #approx =# 3. In addition, the EFG varies strongly with temperature, in contrast to the behaviour at ambient pressure. At 1.2 K a change of the hyperfine pattern is observed indicating a magnetic character of the Yb ion. These results provide evidence of a pressure induced change of the valence state close to 3+. (orig.).
Monte Carlo calculations using the codes PENELOPE and GEANT4 have been performed to characterize the dosimetric properties of monoenergetic photon point sources in water. The dose rate in water has been calculated for energies of interest in brachytherapy, ranging between 10 keV and 2 MeV. A comparison of the results obtained using the two codes with the available data calculated with other Monte Carlo codes is carried out. A chi2-like statistical test is proposed for these comparisons. PENELOPE and GEANT4 show a reasonable agreement for all energies analyzed and distances to the source larger than 1 cm. Significant differences are found at distances from the source up to 1 cm. A similar situation occurs between PENELOPE and EGS4.
Reducing count losses and pile-up pulse effects in quantitative and qualitative analysis is necessary for accuracy of analysis. Therefore, the optimum peaking time for particular detector systems is important. For this purpose, pure Se and Zn elements were excited by 59.5 keV ?-rays from a 50 mCi 241Am annular radioactive source in this study. The characteristic x-rays emitted from pure Se and Zn elements were detected by using an ultra low energy Ge (Ultra-LEGe) detector connecting Tennelec TC 244 spectroscopy amplifier at different peaking time modes. Overall pulse widths were determined by HM 203-7 oscilloscope connecting amplifier. The proper peaking time for ultra low energy germanium detector (Ultra-LEGe) is determined about 4 ?s.
In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.
This paper reviews various techniques to harden Charged Coupled Device (CCD) sensors and the results after irradiation of three Thomson n buried channel CCDs having a different degree of hardening. It describes the major irradiation effects on CCD performances and it makes a comparison of the results between the different hardening levels. It shows good results on dark voltage after ionizing radiation for TH 7863M device hardened both by design and by operating conditions (MPP mode) with respect to the standard device TH 7863A. The irradiations were performed with "6"0Co or X-ray (10 keV) sources on devices in operating mode. (author). 3 refs., 8 figs.
The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.
Interest in optics for hard X-ray broad-band application is growing. In this paper, we compare the hard X-ray (20-100 keV) reflectivity obtained with an energy-dispersive reflectometer, of a standard commercial gold thin-film with that of a 600 bilayer W/Si X-ray supermirror. The reflectivity of the multilayer is found to agree extraordinarily well with theory (assuming an interface roughness of 4.5 Angstrom), while the agreement for the gold film is less, The overall performance of the supermirror is superior to that of gold, extending the band of reflection at least a factor of 2.8 beyond that of the gold, Various other design options are discussed, and we conclude that continued interest in the X-ray supermirror for broad-band hard X-ray applications is warranted.
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
A 20-MeV proton accelerator is developed by Proton Engineering Frontier Project (PEFP) at Korea Atomic Energy Research Institute (KAERI). The 20MeV accelerator consists of 50keV proton injector, 3MeV RFQ (Radio frequency Quadrupole), 20MeV DTL (Drift Tube Linac) and 20MeV beam line. The beam profile was measured at the end of the 20MeV beam line with wire scanner. Moreover the beam emittance was calculated from the quad scan method using beam line quadrupole magnets. In this paper, the beam profile measurement results are presented and the emittance measurement from the quad scan method is discussed
We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.
Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.
Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).
Several complex organic molecules are routinely detected in high abundances towards hot cores and hot corinos. For many of them, their paths of formation in space are uncertain, as gas phase reactions alone seem to be insufficient. In this paper, we investigate a possible solid-phase route of formation for methyl formate (HCOOCH3). We use a chemical model updated with recent results from an experiment where simulated grain surfaces were irradiated with 200 keV protons at 16 K, to simulate the effects of cosmic ray irradiation on grain surfaces. We find that this model may be sufficient to reproduce the observed methyl formate in dark clouds, but not that found in hot cores and corinos.
The research supported by this Department of Energy contract has primarily been devoted to the study of the electronic properties of surfaces with sub-micron size. In previous years, we have studied the photoexcitation of electrons from field emission tips by a focussed Argon-ion laser beam tuned to operate at specific photon energy. The photoexcited electrons escape into the vacuum by tunneling through a surface potential barrier which is distorted by the application of a strong electric field. The interest in these experiments lies in a better understanding of the photoexcitation process at low photon energies. The techniques that have been developed directly measure the excited state energy distribution of electrons emitted through the surface potential barrier. The basic information gained from this research is relevant to opto-electronic devices which rely on photoexcitation of ...
Purpose: The authors have developed a novel technique using an electronic portal imaging device (EPID) to verify the geometrical accuracy of delivery of dose-rate-regulated tracking (DRRT)....Full Text Available
BackgroundThe objective of this study was to develop and validate a daily electronic Endometriosis Pain and Bleeding Diary (EPBD) for assessing treatment-related changes in endometriosis...Full Text Available
BackgroundIn 1998, the U.K. National Health Service Information for Health Strategy proposed the implementation of a National electronic Library for Health...Full Text Available
Electron microscopic analysis can be used to determine the three-dimensional structures of macromolecules at resolutions ranging between 3 and 30 A. It differs from nuclear magnetic resonance spectroscopy...Full Text Available
Superconductivity in A-15 compounds is examined in terms of electron pairing induced by exchange of acoustic plasmons. The electronic band structure of Nb_3Sn, V_3Si, and similar materials favor transition temperatures of Tsub(c)approximately20 K. (Auth.).
The paper outlines the basic problems concerning creation of electron-positron linear colliders, as well as their present-day status. More details on the question can be found in the proceedings of recent workshops on linear colliders contained in the References. ((orig.)).
A simple device is described which is used to determine treatment distance and beam direction in electron therapy employing one collimation. A technique for the production of irregular field templates and localization films is given.
Quality reporting tools, integrated with ambulatory electronic health records, can help clinicians and administrators understand performance, manage populations, and improve quality. Report Central...Full Text Available
ObjectiveThe authors present an Electronic Healthcare Record (EHR) server, designed and developed as a proof of concept of the revised prEN13606:2005 European standard concerning...Full Text Available
Secreted human bronchial mucins, directly collected from macroscopically healthy bronchial mucosa, were prepared in the presence of six proteinase inhibitors, and analysed by electron microscopy. These...Full Text Available
The number of nuclear pore complexes (NPCs) in individual nuclei of the yeast Saccharomyces cerevisiae was determined by computer-aided reconstruction of entire nuclei from electron...Full Text Available
Solving the maintenance and repair problems of electronic instruments, we have supported the research and development work, and reduced operation costs of the pilot plants in KAERI. In addition, we have improved the maintainability of instruments to use effectively. 18 tabs., 17 figs., 13 refs. (Author) .new.
Solving the maintenance and repair problems of electronic instruments, we have supported the research and development work, and reduced operation costs of the pilot plants in KAERI. In addition, we have imposed the maintainability of instruments to use effectively. 15 tabs., 14 figs., 14 refs. (Author) .new.
The localization of gold in the synovial membrane of rheumatoid arthritis patients treated with sodium aurothiomalate was examined and quantitative analysis of epon-embedded sections was carried out...Full Text Available
This dissertation presents the development of the novel mechanical testing technique of in situ nanoindentation in a transmission electron microscope (TEM). This technique makes it possible to simultaneously observe and quantify the mechanical behavior of nano-scale volumes of solids.
PURPOSE This study was designed to evaluate the impact of electronic medical record (EMR) implementation on quality of diabetes care.METHODS We conducted a 5-year longitudinal...Full Text Available
PURPOSE We wanted to assess the impact of an electronic health record–based diabetes clinical decision support system on control of hemoglobin A1c (glycated hemoglobin),...Full Text Available
In 2008, a clinical information tool was developed and embedded in the electronic health record system of an academic medical center. In 2009, the initial information tool, Clinical-e, was superseded...Full Text Available
Objective To compile and evaluate the evidence on the effects on health and social outcomes of computer based peer to peer communities and electronic self support groups, used by people...Full Text Available
A fully quantized many-particle theory of the standard free-electron laser in the small-signal, cold-beam regime is presented. The approach is based on an evaluation of the time-evolution operator in the interaction picture to first order in the quantum-mechanical recoil. For algebraic convenience we use the moving (Bambini-Renieri) frame, in which resonance occurs for zero electron momentum. Though we neglect space-charge effects, genuine many-particle contributions still show up, because the radiation emitted by one electron can be amplified by another electron. Our main results are gross features of the amplification, such as gain and spread, are virtually without many-particle effects. These effects are mainly important in the case of spontaneous emission. For a sufficiently high current, the buildup of the laser field from vacuum is enhanced by amplified spontaneous emission. Incoherence of the ...
The present article outlines major features of the free electron laser (FEL) and reviews research and development of FEL. Relations among the oscillation frequency, electron beam parameters and wiggler parameters, the physical mechanism of amplification and the physical process of saturation are discussed to identify the difference between FEL and other lasers. The report also outlines techniques for accelerators which are used to generate high-quality, high-energy electron beams required for FEL experiments. Techniques to achieve a short wavelength, high output and high efficiency, and applications of FEL are also discussed. FEL consists of an electron accelerator, wiggler and optical resonator. In FEL, electron beams with a relativistic energy interact resonantly with an electromagnetic field to generate coherent electromagnetic waves. Unlike conventional lasers, FEL does not ...
Physics and technology of free electron laser (FEL) are reviewed. Mechanisms of stimulated emission in FEL and its present status and future prospects are presented. Electromagnetic wiggler, two stage FEL and so on are also interpreted. Finally, accelerators and wigglers for FEL, recent FEL experiments and FEL applications are noted. (author).
Rotazyme II, which is a shorter version of Rotazyme (less than 3 h), was compared with electron microscopy and Rotazyme for sensitivity and specificity on 229 human stool specimens. Compared with electron...Full Text Available
This paper deals with electron flux densities and electron energy flux densities in positive column discharges. Recent kinetic calculations by Uhrlandt and Winkler have revealed the interesting physical phenomenon of radially inward directed energy flux densities in positive column plasmas. We have used a self-consistent positive column model, based on an accurate and highly detailed Monte Carlo code, to study this effect in more depth. The results of this study show a rather complex physical picture of electron particle and energy flux densities. Electrons with low energies usually exhibit radially outward directed particle and energy flux densities. At energies above the threshold for electronic excitation particle and energy flux densities are usually inward directed. Only close to the wall, at total energies above the wall potential energy, do these flux densities point towards ...
Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.
and palladium silicides (Pd,Si) with a total. AES intensity ratio of Pd to Si of 35/65. Scanning Electron Microscopy. (SEM') of the Pd region shows that ...
Electron spin resonance spectroscopy can provide a powerful approach to the study of radiation effects in biological materials. This memorandum gives an overview of current and future research. (author).
Measurement of intrathylakoid aqueous volumes by electron spin resonance spectroscopy was used to study ionic permeability properties of thylakoid membranes isolated from Beta vulgaris...Full Text Available
This report covers a further year's work on the development of an Interference Electron Microscope at Imperial College. The instrument is unlike others of its type which have been operated. The basic innovations are to produce the critical illumination co...
A serological trapping technique for detecting rotaviruses is described which involves coating electron microscope grids with protein A and specific rotavirus antiserum. The presence of a layer of antibodies...Full Text Available
The use of sub-nanometer resolution electron density as spatial constraints for denovo and ab-initio structure prediction requires knowledge of protein boundaries...Full Text Available
...2010-10-01 false Standards for health information technology to protect electronic health information...DEPARTMENT OF HEALTH AND HUMAN SERVICES HEALTH INFORMATION TECHNOLOGY HEALTH INFORMATION TECHNOLOGY STANDARDS, IMPLEMENTATION...
...standards and implementation specifications for exchanging electronic health information. 170.205 Section 170.205 Public Welfare DEPARTMENT OF HEALTH AND HUMAN SERVICES HEALTH INFORMATION TECHNOLOGY HEALTH INFORMATION TECHNOLOGY...
The research supported by this Department of Energy contract has primarily been devoted to the study of the electronic properties of surfaces with sub-micron size. In previous years, we have studied the photoexcitation of electrons from field emission tips by a focussed Argon-ion laser beam tuned to operate at specific photon energy. The photoexcited electrons escape into the vacuum by tunneling through a surface potential barrier which is distorted by the application of a strong electric field. The interest in these experiments lies in a better understanding of the photoexcitation process at low photon energies. The techniques that have been developed directly measure the excited state energy distribution of electrons emitted through the surface potential barrier. The basic information gained from this research is relevant to opto-electronic devices which rely on photoexcitation of ...
A variable-dispersion electron spectrometer is being installed for use by the Stanford Superconducting Accelerator in conjunction with its Free Electron Laser program. The system has been designed to operate with electron beam energies from 20 MeV to 200 MeV, with a maximum energy resolution of 0.01% FWHM. The maximum energy acceptance is approximately #+-# 5%, as determined by the bending magnet aperture. Resolution is controlled by adjusting the focal conditions at the entrance to a 90 degree bending magnet, while the dispersion is controlled by changing the magnitude and polarity of the field in a quadrupole magnet which immediately follows the bending magnet. 4 refs., 5 figs.
Thermal analysis testing revealed slight weight changes, which were a function of gamma irradiation, in a highly reduced Defense Waste Processing Facility (DWPF) simulated waste glass. Transmission electron microscopy (TEM) was performed on this glass to determine if the weight change corresponded to microstructural variations. TEM analyses showed that no microstructural changes were attributable to gamma irradiation. Exposure of the samples to the electron beam in the TEM did cause changes in the glass microstructures in some cases. These changes were likely due to localized heating of the glass due to interactions with the transmitted electrons.
This paper reports on the electron current to a Langmuir probe in a moving high-pressure plasma. The plasma is an atmospheric-pressure propane flame, and the probe's speed relative to the plasma is varied from 10 to 30 ms"-"1. The current is linearly dependent on the speed and appears to be comprised of two components - one driven by diffusion and the other by convection. A model is devised which can be used to measure the electron density. By comparing the density computed from this model to that measured from the ion current, it has been possible to measure the electron mobility in the flame gases. The value obtained here is in good agreement with theoretical calculations found in the literature.
... significant change of spontaneous radiation intensity. It is very sensitive technique allowing the observation of small changes of light absorption. ...
Absolute, cascade-free excitation cross sections in an ion have been measured for the resonance "2S#->#"2P transition in Zn"+ using electron-energy-loss and merged electron-ion beams methods. Measurements were carried out at electron energies of below threshold to 6 times threshold. Comparisons are made with 2-, 5-, and 15-state close-coupling and distorted-wave theories. There is good agreement between experiment and the 15-state close-coupling cross sections over the energy range of the calculations.
The crossed electron-ion beams technique was used to measure absolute cross sections for single ionization of Ar"2"+, Kr"2"+ and Xe"2"+ ions at electron energies ranging from threshold to 2000 eV. In contrast to some previous measurements, the metastable contents of the ion beams were small even in the case of Xe"2"+. All measured cross section curves show significant contributions from excitation-autoionization and possibly direct ionization of inner-shell electrons. There is evidence for resonance-excitation-double-autoionization in the case of Xe"2"+. (author).