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The distribution of mass, charge and angular momentum transfer among the products of 54-Fe (255 MeV) ions collisions with the 106 Cd target have been studied. The energy level schemes for 92-Mo, 60-Ni, 96-Ru and 56-Fe are presented. The production yields of different isotopes were also measured. 1 ref., 14 figs.

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(1974). Romania Gils, HJ Rebel, H. Kernforschungszentrum Karlsruhe

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Russian 1979. p. 328. USSR Burtebaev, NT Dujsebaev, AD Ivanov, GN

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The DNA double-strand break (DSB) damage response induced by high energy charged particles on lung fibroblast cells embedded in a 3-dimensional (3-D) collagen tissue equivalents was investigated using antibodies to the DNA damage response proteins gamma-histone 2AX (#gamma#-H2AX) and phosphorylated DNA-PKcs (p-DNA-PKcs). 3-D tissue equivalents were irradiated in positions across the linear distribution of the Bragg curve profiles of 307.7 MeV/nucleon, 556.9 MeV/nucleon, or 967.0 MeV/nucleon "5"6Fe ions at a dose of 0.30 Gy. Patterns of discrete DNA damage streaks across nuclei or saturated nuclear damage were observed, with saturated nuclear damage being more predominant as samples were positioned closer to the physical Bragg peak. Quantification of the DNA damage signal intensities at each distance for each of the examined energies revealed a biological Bragg curve profile with a pattern of DNA damage intensity similar to the physical Bragg curve for the ...

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The operation of the negative ion based NBI system for JT-60U has been progressed since 1996. Most of the efforts in the operation for increasing beam power and energy have been concentrated to get over the troubles, caused by surge energy at the moment of the accelerator break-down, in the ion sources and high voltage power supplies. The ion source for the N-NBI, so far, has accelerated negative ion beams of 14.3 A at 380 keV with deuterium and 18.5 A at 360 keV with hydrogen against the target of 22 A. The neutral beam power injected into JT-60U has already reached 5.2 MW at 350 keV for 0.7 sec with deuterium. (author)

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Neutral atom beams with energies above 200 keV may be required for various purposes in magnetic fusion devices following TFTR, JET and MFTF-B. These beams can be produced much more efficiently by electron detachment from negative ion beams than by electron capture by positive ions. We have investigated the efficiency with which such neutral atoms can be produced by electron detachment in partially ionized hydrogen plasma neutralizers.

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The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10"-"1"5 cm"2 in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, the emission factors for ...

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The formation of porous structures of nanometre size (nanoporous structures) on germanium (Ge) surfaces by focused ion beam (FIB) irradiations was investigated using various FIB conditions such as ion species, irradiation energies, total fluences, fluence rates, and incident angles. FIB-irradiated regions were observed using a scanning electron microscope and an atomic force microscope. It is found that, using a focused Ga ion beam (Ga FIB) at an energy of 100 keV, the irradiated Ge surface swelled up to ion fluence of 2 x 10"1"7 cm"-"2 with nanoporous structures and then was etched for larger fluences. The shape of swollen nanoporous structures depended on the fluence rate and the incident angle of the Ga FIB. However, such porous structures were observed neither for low-energy (15-30 keV) FIB irradiations using Si and Au ions nor for ...

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Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

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A discussion is presented of the 750-KeV chopper experience with both proton and negative ion beams and the ability of these systems to tailor the Linac beam to the diverse requirements of its users; normal accelerator injection, neutron therapy beam, and electron cooling experiments. This flexibility plus a cleaner beam pulse, improved thyratron operation, and mechanical modularity are the results of recent improvements. Additional benefits have been increased reliability and ease of service to the 750-KeV chopper. 3 refs.

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The essential mechanical and electronic parts of a beam pulsing system are described, which reaches an energy resolution of ..delta..E/E=0.1%-0.4% in the energy range from 100 eV and 10 keV.

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Measurements of the double-electron-capture process in which a positive ion of iodine becomes a negative ion in a single collision with a magnesium atom are reported between 20 and 90 keV. The cross section is comparable to that for the rare gases and not as large as might be expected from a two-valence-electron atom. This process is probably insignificant in the production of negative ion beams using a magnesium-vapor target.

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Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, ...

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High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.

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The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within #approx#3 #mu#m. The Ga ...

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Two measurement methods to determine the rate of neutral free radical production by the photo-deionization of negative ion beams (PDINIB) are introduced. These methods, namely, photoelectron-current measurement by low-frequency electro-modulation probe (PMMP) and measurement of decrease in the negative-ion beam current (DNIC) were employed to evaluate the production rate in a trial surface-processing apparatus developed in the author's laboratory utilizing a steady-flux refined beam of neutral free radicals (RBNR) produced by the PDINIB procedure. A {sup 63}Cu{sup -} negative ion beam of kinetic energy E{sub i} varied up to 15 keV was irradiated with a 514.5 nm visible light beam from a 25 W CW Ar{sup +} ion laser. The detection limit of the production rate by the PMMP setup was as high as 6 x 10{sup 9} s{sup -1} under the condition that E{sub i}=15 ...

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We have developed a novel technique for measurements of low energy (p,alpha) reactions using heavy ion beams and a differentially-pumped windowless gas target. We applied this new approach to study the 183 keV resonance in the 17O(p,alpha)14}N reaction. We report a resonance energy (center-of-mass) of 183.5{+0.1}{-0.4} keV, a resonance strength of 1.70 +/- 0.15 meV, and set an upper limit (95\\% confidence) on the total width of the state of < 0.1 keV. This resonance is important for the 17O(p,alpha)14}N reaction rate, and we find that 18F production is significantly decreased in low mass ONeMg novae but less affected in more energetic novae. We also report the first determination of the stopping power for oxygen ions in hydrogen gas near the peak of the Bragg curve (E=193 keV/u) to be (63+/-1)e-15 eV-cm2.

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Measurements with 240 MeV {alpha} particle inelastic scattering with excellent peak/background ratios at small scattering angles including 0{degrees} were made on {sup 56}Fe and {sup 58}Ni using the multipole-dipole-multipole spectrometer at Texas A&M University. Beam was delivered to the spectrometer through a beam analysis system having two bends of 88{degrees} and 87{degrees} respectively. A slit placed after the first 88{degrees} bend was used to define the beam. Slits placed after the second bend (87{degrees}) were used to eliminate slit scattered particles. Comparison of the results of a multiple peak fit to the{sup 58}Ni spectra after continuum subtraction to DWBA calculations revealed about 32% of the E0 EWSR and 58% of the E2 EWSR in the peak, in agreement with previous works. Fits to the angular distribution of the continuum for E{sub x} = 25 MeV show that <15% of the E0 EWSR is present in the continuum. Hence 50% of the EO ...

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Technologies producing high power negative ion beams have been highly developed in these years at JAERI for use in neutral beam injectors for heating the thermonuclear fusion plasmas. At present, it is possible to produce multi-ampere H-/D- ion beams quasi-continuously at energies more than a few hundred keV with a good beam optics of beamlet divergence of a few milli-radian. Based on these technologies, two R and D projects have been initiated; one is to develop a 22A/500keV/10s D- ion source for the neutral beam injector for JT-60U, and the other is to develop a 1A/1MeV/60s H- ion source to demonstrate high current negative ion acceleration up to the energy of 1MeV, the energy required for the neutral beam injector for International Thermonuclear Experimental Reactor (ITER). (author).

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Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, ...

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An electrostatic beam steering mechanism (ESM) has been designed and tested to deflect negative ion beams consisting of multi-beamlets. A steering angle of 10 mrad was obtained within the deviation of less than 1 mrad by biasing two electrodes at 0.5 kV and -0.75 kV for 120 keV H{sup -} ion beam. The current flowing to the positive electrode was no more than 10% of the beam current at a pressure of 2.8x10{sup -5} Torr. (author)

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The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of ...

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Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.

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We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 ...

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The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si"2"+, 1.0-MeV He"+ and 340-keV H"+) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. ...

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Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, ...

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In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR ...

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A study of the 150-300 keV proton beam transmission through glass (borosilicate) tapered capillaries with different diameters of the input and output of the capillary was performed. The focusing effect was observed. The areal density of the transmitted beam is enhanced by approximately 20 times. It was shown that changing a taper angle from 0.5 deg to 1.7 deg evidences the increase of the transmission coefficient more than by 300 times keeping the initial energy spectrum of ions. (author)

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Focused ion beam (FIB) micromachining has been used to produce inclined planes on semiconductor surfaces. A 10 keV FIB system, utilising a Ga"+ liquid metal ion source (LMIS), was employed. The ramped surfaces were prepared by digitally deflecting the ion beam in a serpentine fashion over a rectangular area and incrementing the time the beam spends at a pixel, dwell time, line by line. For the conditions used, control in micromachining the inclination of the ramps to the starting horizontal surface is of the order of 1 arc s per scan of the FIB over the area of interest. The possibility of using such surfaces prepared by FIB, along with vacuum growth techniques such as molecular beam epitaxy (MBE), for application to strain relief structures and lateral device production is discussed. (author).

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The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 {mu}m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga{sup +} focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.

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Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.

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The theoretical alignment limit for focused ion beam (FIB) implantation was deduced from the calculated resolution for the detection of an alignment mark. The alignment resolution varies with the signal to noise ratio and there is an optimum current which gives the best resolution. The alignment resolution epsilon/sub sigma/ is approximately 0.006 ..mu..m for a 160 keV Si/sup ++/ beam from our FIB implanter. The measured alignment error is approximately 0.06 ..mu..m and the main reason of this discrepancy is vibration. The ultimate limit on the alignment error can be reached through improvements in the implanter system.

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Localized beam-processed areas using chemical reactions induced by a 30 keV Ga"+ focused ion beam (FIB) with and without I_2 (etching) and (CH_3)_3CH_3C_5H_5Pt gases (Pt deposition) have been analyzed using a 300 keV Be"2"+ microprobe with a beam spot size of 50-80 nm. The analyzed results have been compared with energy dispersive X-ray (EDX) analysis using an electron beam. The EDX analysis only indicated incorporated impurities at high fluence such as Ga, Pt and C, while microprobe RBS analysis could detect residual iodine with low concentration which couldn't be detected by EDS analysis because of the lower sensitivity of the EDX analysis for heavy atoms.

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The elastic and inelastic scattering of "1"4C at 51 MeV from targets of "4"0Ca, "5"6Fe, "6"0Ni, "6"6Zn and "8"8Sr has been measured using a Q3D spectrometer. The "1"4C-nucleus potentials have been derived by optical-model analysis of the observed elastic scattering; the inelastic scattering differential cross sections were interpreted in the distorted-wave Born approximation and also in the coupled-channels approach. The analysis yields "1"4C-nucleus potentials that closely resemble "1"2sup(,)"1"3C and "1"6O potentials. (orig.).

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For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black ...

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Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. Variations in microstructure and hardness of ...

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A technique has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb and Cs). The method is based on the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag or other metal powders. The following intensities are typical of those observed from carbonate samples subjected to approx. = 3 keV cesium ion bombardment: Li/sup -/: greater than or equal to 0.5 ..mu..A; Na/sup -/: greater than or equal to 0.5 ..mu..A; K/sup -/: greater than or equal to 0.5 ..mu..A; Rb/sup -/: greater than or equal to 0.5 ..mu..A; Cs/sup -/: greater than or equal to 0.2 ..mu..A.

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P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

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We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.

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The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.

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Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.

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Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-{Tc} superconducting lines as narrow as 0.8 {mu}m have been fabricated from epitaxial YBa{sub 2}Cu{sub 3}O{sub 7 {minus} {ital y}} films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 {mu}m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 {times} 10{sup 4} A/cm{sup 2} at 77.3 K. Maskless etching was carried out using 130-keV au{sup +} focused ion-beam (FIB) with a 0.1-{mu}m-diameter beam. A 50-nm-thick film was patterned into 0.3-{mu}m-wide lines at a dose of 5 {times} {sup 16} ions/cm{sup 2}. In comparison with Ar IBE, Cl{sub 2} reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. ...

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Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are ...

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A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...

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A mass separated focused ion beam (FIB) is a very useful tool to fabricate nanostructures by writing implantation within an ion beam synthesis process. In these investigations the IMSA-OrsayPhysics FIB, equipped with a Co_3_6Nd_6_4 alloy liquid metal ion source, was applied. Si(100) and (111) wafers were implanted with 60 keV Co"+"+ ions in the dose range of 2 . 10"1"6 to 2 . 10"1"7 cm"-"2. Implantation parameters were investigated, like pixel dwell time, relaxation time (time between two cycles), dose rate as well as the pixel overlapping factor. The subsequent annealing was done in a two step process, namely 600 deg. C for 60 min and 1000 deg. C for 30 min in a N_2 ambient. The results obtained by SEM investigations in terms of continuous nanowire structures following the direction and interrupted CoSi_2 pattern in the direction show a clear dependence on the time scale as well ...

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Recent results of the experiments at GOL-3 facility are presented. Plasma with a density of 1014...1016 cm-3 is confined in a 12-meter-long solenoid, which comprises 55 corrugation cells with mirror ratio Bmax/B min=4.8/3.2 T. The plasma is heated up to 2...4 keV temperature by a high power relativistic electron beam (?1 MeV, ? 330 kA, ?8?s, ?120 kJ) injected through one of the ends. Mechanism of experimentally observed fast ion heating, issued of plasma stability and confinement are discussed.

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Recent studies have provided data that make it possible to estimate the efficiency and cost of future beamlines using a chemical oxygen-iodine laser as a neutralizer. These studies indicate that a 400-keV neutral deuterium beam of more than 20 A will operate at an efficiency >60%, with the capital cost of the neutralizer at less than $2/W of neutral beam output. Beamlines of lower current and less energy will operate at poorer efficiencies and higher neutralizer costs per watt of neutral beam. These are estimates. As they are very sensitive to changes in the assumptions from which they were derived, they must be used with some caution. Additional studies are expected to provide more reliable estimates.

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The aim of this work is to investigate the acoustic wave generation by pulsed and periodically modulated ion beams in different solid materials depending on the beam parameters and to demonstrate the possibility to apply an intensity modulated focused ion beam (FIB) for acoustic emission and for nondestructive investigation of the internal structure of materials on a microscopic scale. The combination of a FIB and an ultrasound microscope in one device can provide the opportunity of nondestructive investigation, production and modification of micro- and nanostructures simultaneously. This work consists of the two main experimental parts. In the first part the process of elastic wave generation during the irradiation of metallic samples by a pulsed beam of energetic ions was investigated in an energy range from 1.5 to 10 MeV and pulse durations of 0.5-5 #mu#s, applying ions with different masses, e.g. ...

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The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

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He ions incident at grazing angles on Cu(110) and Ni(110) surfaces are neutralised into triplet and singlet states, of which the 3p, 3d and 4d upper states are accessible to optical spectroscopy. In the energy range from 500 eV to 15 keV no significant energy dependence of the relative intensities of singlet and triplet lines was observed for scattering on Cu(110). The intensities from Ni(110) are higher and the singlet to triplet intensity ratio of the 3d to 2p transition is about 6% smaller than that from Cu(110). The results can be explained well by assuming resonant charge capture into excited He and intermediate formation of negative He/sup -/ states.

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The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).

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A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

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The retina consists of many kinds of central nervous cells, and some cells contain fatty acids such as palmitic acid, stearic acid and oleic acid. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) has a possibility to detect kinds and quantity of materials in relation to the cell or tissue. We applied TOF-SIMS to detect the palmitic acid, stearic acid and oleic acid in the visual cell of the rat retina. We used 4- and 18-month-old normal Wistar Kyoto rats. After pentobarbital anesthesia, the eyes were enucleated, and immediately put into liquid nitrogen without any fixation and then cut into semithin sections (10 {mu}m) with a cryo-ultramicrotome, and laid it on a silicon wafer plate and air-dried. Ion images were detected with TOF-SIMS. Positive ion images were examined with a Ga{sup +} source at an acceleration voltage of 15 keV. The secondary ion acceleration voltage was ...

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With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga"+ focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is expected to influence the ...

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A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ...

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A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess ...

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We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial ...

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Coded imaging techniques using thick, micro-Fresnel zone plates as coded apertures have been used to image x-ray emissions (2-20 keV) and 3.5 MeV Alpha particle emissions from laser driven micro-implosions. Image resolution in these experiments was 3-8 ..mu..m. Extension of this coded imaging capability to higher energy x-rays (approx. 100 keV) and more penetrating charged particles (e.g. approx. 15 MeV protons) requires the fabrication of very thick (50-200 ..mu..m), high aspect ratio (10:1), gold Fresnel zone plates with narrow linewidths (5-25 ..mu..m) for use as coded aperatures. A reactive ion etch technique in oxygen has been used to produce thick zone plate patterns in polymer films. The polymer patterns serve as electroplating molds for the subsequent fabrication of the free-standing gold zone plate structures.

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A method has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb, and Cs). The method consists of the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag, or other metal powder. The following intensities are typical of those observed from carbonate samples subjected to /approximately/3 KeV cesium ion bombardment: Li/sup -/: greater than or equal to0.5 ..mu..A; Na/sup -/: greater than or equal to0.5 ..mu..A; K/sup -/: greater than or equal to0.5 ..mu..A; Rb/sup -/: greater than or equal to0.5 ..mu..A; Cs/sup -/: greater than or equal to0.2 ..mu..A. 7 refs., 2 figs., 1 tab.

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The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21/sup 0/C +/- 1/sup 0/C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F/sup +/, Ar/sup +/, or As/sup +/ ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10/sup 18/ to 1 x 10/sup 20/ ions/m/sup 2/. The conductivity of films implanted with As/sup +/ was approximately one order greater than those implanted with Ar/sup +/, which in turn was approximately one-half order greater than those implanted with F/sup +/. The conductivity of the most conductive film approx.1 S/m) was almost 14 orders of magnitude greater than the ...

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To simulate radiation damage under a future Spallation Neutron Source (SNS) environment, irradiation experiments were conducted on a candidate 9Cr-2WVTa ferritic/martensitic steel using the Triple Ion Facility (TIF) at ORNL. Irradiation was conducted in single, dual, and triple ion beam modes using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} at 80, 200, and 350{degrees}C. These irradiations produced various defects comprising black dots, dislocation loops, line dislocations, and gas bubbles, which led to hardening. The largest increase in hardness, over 63 %, was observed after 50 dpa for triple beam irradiation conditions, revealing that both He and H are augmenting the hardening. Hardness increased less than 30 % after 30 dpa at 200{degrees}C by triple beams, compatible with neutron irradiation data from previous work which showed about a 30 % increase in yield strength after 27.2 dpa ...

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A time-of-flight mass spectrometer has been constructed to measure the energy spectra of particles scattered by 10/sup 0/ with primary energies between 200 eV and 15 keV. The energy resolution ..delta..E/E of the system is between 0.1 and 0.4%. Energy spectra of scattered molecules and their dissociation products are shown for 570 eV H/sub 2//sup +/ and 4430 eV N/sub 2//sup +/ as projectiles. Electron capture into unbound states of the neutral molecule, with perhaps some contribution from mutual scattering within the molecule, appears to explain the observed dissociation product energy spectra peak widths.

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We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

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Elastic scattering cross sections of keV protons in solids (Z=3-82) are calculated using the partial wave expansion technique and the ''muffin-tin'' bound-atom potential. The differential cross sections for small scattering angles of less than 10deg are smaller than those with the Ziegler-Biersack-Littmark potential at all energies and for all solids, although, for larger angles, the two cross sections agree with each other. The mean free paths of the protons in the solids, obtained from the total cross sections, decrease very slowly with decreasing energy. Furthermore, at low energies they approach half the nearest-neighbor distance, which is taken as the radius of the augmented plane wave sphere in the muffin-tin model of crystalline solids. (orig.).

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We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

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The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

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Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

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Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers ...

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Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials ...

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Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N ...

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The object and the purpose of the present work was to develop, to assemble and to start running a new TOF (time of flight) mass spectrometer for imaging SNMS analytic which is optimized for the analysis of highly molecular secondary ions. The most important purpose was the characterization of the TOF mass spectrometer. The obtained mass spectra of indium, tantalum and silver clusters reflect the excellent properties of the TOF mass spectrometer for the detection of large clusters with good detection efficiency up to masses of 16000 amu. The possibility of the deflection of selected saturated atom and cluster peaks serves for further improvement of the detection efficiency for large molecules. The accessible mass resolution was determined to be of the order of m/{delta}m=1000 in the high mass region. Numerous measurements were carried out to characterize the useful yield of this spectrometer. For a best possible adaptation of the TOF mass spectrometer for the ...

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Development of techniques for separating isomeric nuclides is important to the investigation of schemes for gamma-ray lasers. In preparation for an experiment to separate 10_1_4 atoms of the /sub 197m/Hg (299 keV, tau/sub 1/2/ = 24 hours) isomer, we report isotopically selective resonance ionization of mercury atoms. This has been accomplished by three-step excitation via the 6_3P"1 and 8_1S"0 excited states, using three collinear pulsed laser beams of 254, 286, and 532 nm wavelengths from a Nd:YAG and two dye lasers. These beams were passed through a closed mercury-vapor cell containing electrostatic plates to which the ions were drawn. Ion current and fluorescent radiation were measured as a function of laser frequency. Hyperfine structures for the 254- and 286-nm transitions were observed.

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The large uranium fission cross section leading to iodine and the behaviour of this element in the cladding tube during energy production and afterwards during waste storage is a crucial problem, especially for {sup 129}I which is a very long half-life isotope (T=1.59 x 10{sup 7} yr). Since a combined external and internal oxidation of the zircaloy cladding tube occurs during the reactor processing, iodine diffusion parameters in zirconia are needed. In order to obtain these data, stable iodine atoms were first introduced by ion implantation into zirconia with an energy of 200 keV and a dose equal to 8 x 10{sup 15} at cm{sup -2}. Diffusion profiles were measured using 3 MeV alpha-particle Rutherford backscattering spectrometry at each step of the annealing procedure between 700 C and 900 C. In such experiments a reduced iodine concentration was observed, which correlated to a diffusion-like process. Similar analysis has been performed using ...

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M-shell X-rays of the rare-earth elements {sub 60}Nd, {sub 64}Gd, {sub 67}Ho and {sub 71}Lu were measured for lithium ion bombardment in the energy range 1.0-6.0 MeV. The M-shell X-rays with energies of 0.978-1.631 keV were detected with a LINK analytical detector. The efficiency of the detector was determined by using the known atomic-field bremsstrahlung cross-sections from low energy electron beams and K-shell X-ray measurements with light projectiles. The measured cross-sections are compared to the predictions of the first Born approximation and the ECPSSR (energy loss and Coulomb deflection effects, perturbed stationary state approximation with relativistic correction) theories. The best theoretical description of the present data is given by the ECPSSR theory, even though the discrepancy between data and theory is increasing at higher projectile energies.

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In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and dislocation loop were observed from the ...

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Ion implantation of Si (60 keV, 1x10"1"4/cm"2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1x10"1"8 and 1x10"1"9/cm"3. Following post-implantation annealing at 740 degree C for 15 min to allow agglomeration of the available interstitials into elongated #left brace#311#right brace# defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in #left brace#311#right brace# defects as a function of boron concentration, up to nearly complete disappearance of the #left brace#311#right brace# defects at boron concentrations of 1x10"1"9/cm"3. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and implications for transient-enhanced ...

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For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force ...

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In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

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A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. ...

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Although low-energy ion radiation has been proven to have a wide range of biological effects and led to fruitful achievements as a new mutagenic source for genetic modification, there still exist some disputes about its mutagenic mechanisms because of its short-penetrating property. In present research, Arabidopsis thaliana transgenic for GUS recombination substrate was used to evaluate the genomic instability induced by irradiations of alpha particle (3.3MeV) and Low-energy-Argon ion (30 KeV). A pronounced effects of alpha particle irradiation to Arabidopsis thaliana seedlings and Argon ion irradiation to seeds on the somatic homologous recombination frequency (sHRF) were reported. The sHRFs increased 1.88-fold and 2.42-fold, respectively, which indicated that the short-penetrating radiation could effectively induce the plant genomic instability in either dry seeds or seedlings with active metabolism. ...

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As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 stainless. Electrochemical experiments were carried out to ...

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As a method to enhance the sensitivity (S) of an inorganic resist for focused-ion-beam (FIB), lithography, sub-0.1 #mu#m patterning properties of a columnar structural #alpha#-Se_7_5Ge_2_5 resist have been investigated using 30 keV low-energy Ga"+-FIB exposure and CF_4 reactive-ion etching (RIE). development. The Se_7_5Ge_2_5 thin films were 60 .deg. and 80 .deg. -obliquely deposited on Si substrate and parts of the films were annealed for several minutes at the glass transition temperature (T_g=#approx#220 .deg. C). Columnar structures with the angles of approximately 40 .deg. and 65 .deg. are observed in 60 .deg. and 80 .deg. -obliquely deposited films, respectively, and they disappear after annealing. Despite the disappearance of the columnar structures, a critical decrease in thickness is not observed. For the FIB exposures with a beam diameter of #approx#0.1#mu#m and around the threshold dose, the negative-type fine ...

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Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass ...

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Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the ...

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The total interaction cross sections (#sigma#_t) of some sugars and amino acids and five elements: lithium, carbon, oxygen, aluminium and calcium have been measured for 6.4 keV, 13.95 keV, 14.4 keV, 17.74 keV, 24.14 keV, 30.8 keV, 35 keV, 59.54 keV, 81 keV, 122 keV and 136 keV photons in a narrow beam good geometry set up, by using high resolution detectors such as a Si-PIN diode detector and a high purity germanium detector. The #sigma#_t values have been used in a matrix method to evaluate the effective atomic numbers Z_e_f_f of the samples from their effective atomic cross sections #sigma#_a. The effective atomic cross section of a sample #sigma#_a is the total interaction cross section divided by the total number of atoms of all types in it. Further, a ...

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Austenitic stainless steels have been implanted with molybdenum ions (Mo"+, 100 keV, 2.5 x 10"1"6 atoms cm"-"2). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of #approx# 1000 A with a maximum molybdenum concentration of #approx# 9 at.% Mo located at #approx# 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H_2SO_4 have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and non-implanted alloys and the thicknesses of the films are similar. On the implanted alloy the outer ...

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An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two ...

Energy Technology Data Exchange (ETDEWEB)

The half-life ({ital T}{sub 1/2}) and {ital g} factor of the 2002 keV 11{sup {minus}} isomer in the odd-odd nucleus {sup 92}Tc produced by the pulsed heavy-ion reaction {sup 68}Zn({sup 28}Si,{ital p}3{ital n}){sup 92}Tc have been measured using time differential perturbed angular distribution method. The measured {ital T}{sub 1/2} value is 3.15(20) ns. From the observed spin precession frequency {omega}{sub {ital L}} of a {sup 92}Tc recoil implanted into a ferromagnetic Ni host, we obtain the {ital g} factor to be 0.806(20). The measured value of the {ital g} factor is in good agreement with a shell model analysis carried out using {pi}({ital p}{sub 1/2}{ital g}{sub 9/2}) and {nu}({ital p}{sub 1/2}{ital g}{sub 9/2}) orbitals for the proton particles and neutron holes outside the {sup 88}Sr core. {copyright} {ital 1996 The American Physical Society.}

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in ...

International Nuclear Information System (INIS)

The atomic masses of the alkali-metal isotopes "6Li,"2"3Na,"3"9","4"1K,"8"5","8"7Rb, and "1"3"3Cs have been obtained from measurements of cyclotron frequency ratios of pairs of ions simultaneously trapped in a Penning trap. The results, with one standard deviation uncertainty, are: M("6Li)=6.015 122 887 4(16)u,M("2"3Na)=22.989769 282 8(26)u,M("3"9K)=38.963 706 485 6(52)u,M("4"1K)=40.961 825 257 4(48)u,M("8"5Rb)=84.911 789739(9)u,M("8"7Rb)=86.909 180 535(10)u, and M("1"3"3Cs)=132.905 451 963(13)u. Our mass of "6Li yields an improved neutron separation energy for "7Li of 7251.1014(45) keV.

Energy Technology Data Exchange (ETDEWEB)

Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is ...

Energy Technology Data Exchange (ETDEWEB)

The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is ...

Energy Technology Data Exchange (ETDEWEB)

Intensities of {gamma}-transitions emerging from the EC decay of {sup 203}Pb were measured precisely. The obtained relative {gamma}-intensities are 100%(279.2keV), 4.14+-0.08%(401.3keV) and 0.932+-0.022%(680.5keV). The 279.2 and 680.5keV level feeding {beta}-branching ratios were deduced to be 95.3+-0.1 and 4.7+-0.1% respectively. {sup 203}Pb is suggested for calibration purposes. (author).

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct ...

Energy Technology Data Exchange (ETDEWEB)

The properties of the triplet of low-lying states in {sup 101}Mo have been studied through spectroscopy of the {gamma} radation following thermal neutron capture in {sup 100}Mo and {beta}-decay of {sup 101}Nb and through a measurement of the proton angular distributions in the {sup 100}Mo(d, p) reaction with 14 MeV deuteron energy. The half-lives of the 13.5 keV state and the 57.0 keV 5/2{sup +} state have been measured as 226(7) and 133(7) ns, respectively. These values and the quadrupole/dipole mixing ratios of the 13.5 keV and 43.5 keV transitions yield spin and parity 3/2{sup +} for the 13.5 keV level. The E2 components in the 13.5 (3/2{sup +}->1/2{sup +}) and 43.5 keV (5/2{sup +}->3/2{sup +}) transitions are {le} 8x10{sup -4} and 54(9)%, respectively. The possibility of an additional state near to the 57.0 keV level is discussed. ...

International Nuclear Information System (INIS)

In 1999, the plasma parameters of reversed shear (RS) plasmas had been extended in 1) DT-equivalent fusion power gain Q_D_T"e"q - 0.5 (n_D(0)#tau#_ET_i(0) - 4x10"2"0 m"-"3#centre dot#keV#centre dot#s) for 0.8 s and 2) full non-inductive current drive with 80% of the bootstrap current fraction. Physics of the internal transport barriers (ITBs) in RS plasmas, including the energy transport and the formation of ITB, were extensively studied. A nearly full current drive (92% non-inductively) was obtained with negative ion based neutral beam (NNB) injection (360 keV, 3.4 MW) in a high #beta#_p H-mode plasma (I_p=1.5 MA, B_T=3.7 T, q_9_5=4.2) with high plasma performance (#beta#_N=2.4 and H_8_9=2.56). Rise in the central electron temperature (T_e - 9 keV) resulted in the current drive efficiency #eta#_C_D of NNB reached 1.3x10"1"9 A/W/m"2, the highest for the neutral beam current drive. As for the H-mode plasmas, decrease in the ...

Science.gov (United States)

The differential cross section measurements for /sup 241/Am, /sup 242m/Am and /sup 243/Am are reviewed in the energy range from 0.5 eV to 10 keV. Parameters extracted from resonance analysis, such as the neutron strength function, the average level spacing, the average capture and fission widths, are compared for the various measurements. The average capture and fission cross sections from 100 eV to 10 keV are directly compared. The status of the data set is discussed with suggestions for further measurements. 24 references.

Science.gov (United States)

... In a HEAO 1 study of active galaxies, principally Seyfert 1s, in the 2, 165 keV energy range, Rothschild et al. ... As discussed by Rothschild et al. ...

International Nuclear Information System (INIS)

... gamma cascades kev range 10-100 lifetime lutetium 171 lutetium 173 lutetium

Science.gov (United States)

The MgF{sub 2} monocrystals were irradiated at room temperature with 390 keV B{sup +} ions up to the fluence of 10{sup 16} cm{sup -2}. The irradiated samples were (isochronally and isothermally) annealed in high vacuum at the temperatures 200 deg. C, 300 deg. C, 400 deg. C, 500 deg. C, 600 deg. C and 700 deg. C for the times ranging from 2-100 hours. After each annealing step, the boron depth distribution was determined using the neutron depth profiling technique. As implanted, the depth distributions of boron exhibited standard Gaussian-like forms, but the evaluated profile parameters, R{sub P} = 960 nm and {delta}R{sub P} = 140 nm, were higher than those calculated using the SRIM code (R{sub P} = 870 nm and {delta}R{sub P} = 115 nm). Annealing at temperatures up to 400 deg. C did not change the depth profiles. Annealing at 600 deg. C, however, led to a one-way gradual transfer of the boron atoms from the site of implantation towards the ...

International Nuclear Information System (INIS)

The concentration of trace elements in brain sections was measured by synchrotron radiation X-ray fluorescence. The relative concentration was calculated by means of the normalization of Compton scattering intensity approximately 22 keV, after the normalization for collecting time of X-ray spectrum and the counting of the ion chamber, and subtracting the contribution of the polycarbonate film for supporting sample. Furthermore, the statistical evaluation of the element distribution in various regions of the brain sections of the 20-day-old rats was tested. For investigating the distribution of elements in the brain of iodine deficient rats, Wistar rats were fed with iodine deficient diet and deionized water (ID group). The rats were fed the same iodine deficient diet, but drank KIO_3 solution as control (CT group). The results showed that the contents of calcium (Ca) in thalamus (TH) and copper (Cu) and iron (Fe) in cerebral cortex (CX) of ID ...

International Nuclear Information System (INIS)

... aromatics barium dienes heat exchangers ion exchange ions kinetic equations

International Nuclear Information System (INIS)

... energy spectra inelastic scattering ion-molecule collisions mass spectrometers

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Science.gov (United States)

Not Available

International Nuclear Information System (INIS)

1 - Description of program or function: Continuous energy cross-section data library for the Monte Carlo program MCNP based on the ENDF/B-VI Release 3 evaluated nuclear data library (ACE Format). Format: ACE; Number of groups: Continuous energy; Nuclides (107): H-1, H-2, He-4, Li-6, Li-7, Be-9, B-10, B-11, C-nat, N-14, N-15, O-16, O-17, Na-23, Mg-nat, Al-27, Si-nat, Cl-nat, Ti-nat, Cr-50, Cr-52, Cr-53, Cr-54, Mn-55, Fe-54, Fe-56, Fe-57, Fe-58, Co-59, Ni-58, Ni-60, Ni-61, Ni-62, Ni-64, Zr-90, Zr-91, Zr-92, Zr-94, Zr-96, Zr-nat, Nb-93, Mo-94, Mo-95, Mo-96, Mo-97, Mo-nat, Tc-99, Ru-101, Ru-102, Ru-104, Rh-103, Pd-105, Pd-107, Ag-109, I-129, Xe-131, Cs-133, Pr-141, Nd-143, Nd-145, Pm-147, Sm-147, Sm-149, Sm-150, Sm-151, Sm-152, Eu-153, Gd-154, Gd-155, Gd-156, Gd-157, Gd-158, Gd-160, Hf-174, Hf-176, Hf-177, Hf-178, Hf-179, Hf-180, Hf-nat, Pb-206, Pb-207, Pb-208, Bi-209, Th-232,U-233, U-234, U-235, U-236, U-238, Np-237, Pu-238, Pu-239, Pu-240, ...

Energy Technology Data Exchange (ETDEWEB)

The gamma-ray spectrum following neutron capture on /sup 87/Sr was measured at 3 neutron energies: E/sub n/ = thermal, 2 keV, and 24 keV. Gamma rays were detected in a three-crystal Ge(Li)-NaI-NaI pair spectrometer. Gamma-ray intensities deduced from these spectra by spectral unfolding are presented.

Energy Technology Data Exchange (ETDEWEB)

An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.

CERN Document Server

Conceptual Design of Superconducting Quadrupole Arrays for the Heavy-Ion Fusion

International Nuclear Information System (INIS)

The absolute cross sections of "2"3Na(p,n)"2"3Mg, "2"7Al(p,n)"2"7Si and "3"0Si(#alpha#,n)"3"3S reactions were measured in the incident energy range of 5.05 to 5.80, 5.80 to 6.25 and 3.975 to 6.235 MeV respectively using a spherically shaped 4#pi# neutron detector. In the energy range 5.80 to 7.80 and 6.235 to 11.30 MeV the absolute cross sections of "2"3Na(p,n)"2"3Mg and "3"0Si-(#alpha#,n)"3"3S reactions were determined by optical model calculations. The cross sections of the inverse reactions "2"3Mg(n,p)"2"3Na and "3"3S(n,#alpha#)"3"0Si were also calculated by the same method for the neutron energy range of 10 keV to 7.50 MeV for each reaction. The cross section of the latter reaction in the neutron energy range of 10 keV to 840 keV was also determined from its inverse reaction "3"0Si(#alpha#,n)"3"3S by the application of the detailed balance theorem. The reactions for which the cross sections were determined are of ...

International Nuclear Information System (INIS)

Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the range of the fluorine implant and the ...

Energy Technology Data Exchange (ETDEWEB)

In recent years, the influences of acid rain such as the acidification of lake water, on bio-system by the heavy metals from effluent of soils with acid rain and also on the structural materials of buildings are seriously discussed. Sulfur and nitrogen that are contained in fossil fuels are released into the atmosphere by the fuel combustion as their oxides dissolve in rain drops as sulfite and nitrous ions, where they are further oxidized into sulfate and nitrate ions These ions lower the pH of rain water resulting so-called acid rain. Therefore, it is important to accurately determine these ions in rain water for the investigation of reality of acid rain. However, it is not easy to accurately determine these ions, especially for sulfite ions in rain water, since they are quickly oxidized by the catalytic action of metallic ions such as ...

Energy Technology Data Exchange (ETDEWEB)

There are 13 Electron Beam Ion Sources in operation which produce highly charged ions, up to Th{sup 80+} and Xe{sup 53+}. Most of the sources are used to study these ions under electron impact or when recombining with gaseous or solid targets. That provides an insight into the atomic physics of these highly charged ions and into the physics of the plasma in which such ions can be found. This paper reviews the present knowledge of atomic processes, important in the production of such ions with an EBIS.

International Nuclear Information System (INIS)

The half-value thicknesses, linear and mass attenuation coefficients of biological samples such as bone, muscle, fat and water have been measured at 140, 364 and 662keV ?-ray energies by using the ATOMLABTM-930 medical spectrometer. The ?-rays were obtained from 99mTc, 131I and 137Cs ?-ray point sources. Also theoretical calculations have been performed in order to obtain the half-value thicknesses and, mass and linear attenuation coefficients at photon energies 0.001keV-20MeV for bone, muscle and water samples. The calculated value and the experimental results of this work and the other results in literature are found to be in good agreement.

International Nuclear Information System (INIS)

Neutron capture #gamma#-ray spectra have been measured at 11 average neutron energies from 10 to 530 keV in /sup 88/Sr using a 20 x 15 cm NaI detector with time-of-flight discrimination of background events. The partial radiation widths and the calculated partial valence widths are compared for the strong p-wave resonances at 287 and 321 keV and found to be highly correlated. At these energies, the spectra are dominated by strong transitions to low-lying single particle states, in confirmation of the role of valence capture in the 3p region. However, the data do not support this mechanism at <508> keV.

Energy Technology Data Exchange (ETDEWEB)

A nonneutral /sup 7/Li/sup +/ ion plasma is described in which ion Langmuir waves are observed for the first time. The properties of these waves near the Brillouin density limit are investigated.

International Nuclear Information System (INIS)

The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. According to the coincidence data, the decay scheme was modified. The positions of 221.80, 318.00, 377.90, 452.50, 515.42, 1011.05 and 1759.72 keV transitions have been arranged again, the transition positions of 104.70, 105.95 and 774.15 keV gamma-rays have been assigned for the first time, the positions of 169.00, 590.91, 980.52 and 1431.68 keV transitions have been reconfirmed, the 1508.01 keV gamma-ray was observed simultaneously for the first time and its transition position has been assigned. The #beta#-intensities and the values of log ft of most levels were calculated. (author)

International Nuclear Information System (INIS)

A simulated hull monitoring system based on passive #gamma# ray scanning was set-up in K-01 hot-cell, which consists of a simulated hull basket, a collimator system, a 150 cm"3 HPGe detector and an ORTEC-919 multichannel buffer-computer system. Six different kinds of experimental set-up were established to simulate the variations of #gamma# ray source term distribution (partly concentration) and the variations of matrix density (+46.1%). The experimental results show that the biases of peak area is better than -25.3% for "1"3"7Cs 662 keV #gamma# rays and -18.6% for "1"4"4Ce-"1"4"4Pr 2186 keV #gamma# rays. The hardness of pulse height spectrum is demonstrated to show that the peak area ratio of 2186 keV to 662 keV varies from 380 to 72 when the thickness of lead filter varies form 5 mm to 30 mm. Also studied are the design parameters of collimator system.

Science.gov (United States)

Nov 14, 2009 ... Ring Current electrons from the Fok Ring Current Model are computed using plasma and magnetic field values from the SWMF magnetosphere ...

International Nuclear Information System (INIS)

Two experiments are currently underway to measure the single-particle weak mixing matrix element for the 1064 KeV transition in "2"0"7Pb. One experiment measures the circular polarization of the 1064 KeV gamma ray emitted from an unpolarized source, while the other experiment measures the forward-backward asymmetry of gamma rays emitted from a polarized source. Analysis of the first set of polarized source data yields an upper limit of 46 eV for the single-particle weak mixing matrix element. copyright 1995 American Institute of Physics.

International Nuclear Information System (INIS)

The #gamma#-radiation following thermal neutron capture in "1"0"0Mo has been studied by singles and coincidence measurements. A "1"0"1Mo level scheme has been deduced and is compared with the results of previous (d,p), (n,#gamma#) and "1"0"1Nb decay studies. The existence of the first excited state at 13.51 keV has been confirmed. The present data yield a neutron binding energy of 5398.4 KeV. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

(Sep 1973). United Kingdom Sinanoglu, O. Luken, W. Yale Univ., New Haven,

Energy Technology Data Exchange (ETDEWEB)

Taking the development of large current, negative ion sources which is in progress aiming at nuclear fusion reactors and the development of high luminance ion sources planned as a part of the Omega Project as the examples, the technology for generating high power ion beams is explained. Both these projects are positioned at the limit of the present technology of high power ion beam application as their targeted beam power reaches several tens MW. Consequently, the requirement for the ion sources is severe, and in particular, the generation of the ion beams having large current density with good convergence is beyond all precedents. The application of high power ion sources has been realized as the neutral beam injectors for large tokamaks. Also the hydrogen negative ion source of large current and the electrostatic ...

Energy Technology Data Exchange (ETDEWEB)

Negative ion based neutral beam injector is one of the most attractive heating system in future fusion reactors. In realizing the system, the crucial device which has to be developed is a high intensity negative ion source. Significant progress has been made on the negative ion source in these years. Among them, a few ampere negative ion beam were produced stably, while the divergence of negative ion beams becomes to be as low as < 10 mrad. We consider these results are demonstrating the potential of the negative ion source for the heating device in future reactors.

International Nuclear Information System (INIS)

The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps.

Energy Technology Data Exchange (ETDEWEB)

The main physical processes allowing negative ion production by surface sputtering for further acceleration in tandem acceleration are briefly reviewed. The sputtering yield and the probability of negative ion ejection are discussed. The properties of negative ion beams for an efficient acceleration in tandem accelerators are also discussed, with an emphasis on space charge problems. The main features and performances of the heavy negative ion injector of the Bucharest tandem accelerator are given.

Energy Technology Data Exchange (ETDEWEB)

We have undertaken a study of ion mobility resolution in a miniature ion mobility spectrometer with a drift channel 1.7 mm in diameter and 35 mm in length. The device attained a maximum resolution of 14 in separating ions of NO, O{sub 2}, and methyl iodine. The ions were generated by pulses from a frequency-quadrupled Nd:YAG laser. Broadening due to Coulomb repulsion was modeled theoretically and shown experimentally to have a major effect on the resolution of the miniature device.

International Nuclear Information System (INIS)

A general expression for the current-density distribution of a focused-ion beam (FIB) in the chromatic-aberration region is set up in the form of a definite integral. With the experimentally obtained ion-energy distribution of a liquid-metal ion source, its contribution to the FIB current-density distribution is estimated. Calculated results explain the wide-exponential tail of a FIB.

CERN Document Server

We study the high-energy emission of the Galactic black hole candidate GX 339-4 using INTEGRAL/SPI and simultaneous RXTE/PCA data. By the end of January 2007, when it reached its peak luminosity in hard X-rays, the source was in a bright hard state. The SPI data from this period show a good signal to noise ratio, allowing a detailed study of the spectral energy distribution up to several hundred keV. As a main result, we report on the detection of a variable hard spectral feature (>150 keV) which represents a significant excess with respect to the cutoff power law shape of the spectrum. The SPI data suggest that the intensity of this feature is positively correlated with the 25 - 50 keV luminosity of the source and the associated variability time scale is shorter than 7 hours. The simultaneous PCA data, however, show no significant change in the spectral shape, indicating that the source is not undergoing a canonical ...

International Nuclear Information System (INIS)

The measurements of the K X-ray intensity ratio I(K#alpha# _2/K#alpha# _1), I(K#beta# _1/K#alpha# _1) and I(K#beta#/K#alpha#) for elements V, Mn, Zn, Tc, Ru, Cd, Xe, Ba, Cs, Hg and Rn were experimentally determined both by photon excitation, in which 59.5 keV #gamma#-rays from a "2"4"1Am and 123.6 keV #gamma#-rays from a "6"0Co were used, and following the radioactive decay of "5"1Cr, "5"5Fe, "6"7Ga, "9"9Tc, "1"1"1In, "1"3"1I, "1"3"3Ba, "1"3"3Xe, "1"3"7Cs, "2"0"1Tl and "2"2"6Ra. K X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the theoretical values. It was observed that present values agree with the previous theoretical and other experimental results.

CERN Document Server

We examine the accretion properties in a sample of 42 hard (3-60keV) X-ray selected nearby broad-line AGNs. The energy range in the sample is harder than that usually used in the similar previous studies. These AGNs are mainly complied from the RXTE All Sky Survey (XSS), and complemented by the released INTEGRAL AGN catalog. The black hole masses, bolometric luminosities of AGN, and Eddington ratios are derived from their optical spectra in terms of the broad H$\\beta$ emission line. The tight correlation between the hard X-ray (3-20keV) and bolometric/line luminosity is well identified in our sample. Also identified is a strong inverse Baldwin relationship of the H$\\beta$ emission line. In addition, all these hard X-ray AGNs are biased toward luminous objects with high Eddington ratio (mostly between 0.01 to 0.1) and low column density ($<10^{22} \\mathrm{cm^{-2}}$), which is most likely due to the selection effect of the surveys. The hard ...

International Nuclear Information System (INIS)

Progress in the development of negative ion sources and their application in fusion research is reviewed. (U.K.).

UK PubMed Central (United Kingdom)

Ion-channels can be activated (gated) by a variety of stimuli including chemicals, voltage, mechanical force or temperature. Whereas molecular mechanisms of ion-channel gating by chemicals and...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The performance of the PSI/ETH focused ion beam (FIB) system has been improved to produce ion beams of very low energies down to 40 eV with a reasonable spot size of 1 {mu}m at 200 eV. (author) 2 figs., 1 ref.

Energy Technology Data Exchange (ETDEWEB)

The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the ...

International Nuclear Information System (INIS)

The dependences of kinetic energies and peak profiles of multicharged ions of I "q"+ (q = 2-3) and C"2"+ on the laser intensity have been studied in detail by time-of-flight mass spectrometry, those multicharged ions are produced by irradiation of methyl iodide cluster beam with a nanosecond 532 nm Nd-YAG laser. Our experiments show that the kinetic energies released of multicharged ions increase linearly with the laser intensity in the range of 3 x 10"9-2 x 10"1"1 W/cm"2. The peaks of multicharged ions are split to forward ions and backward ions, and the ratio of the backward ions to forward ions decreases exponentially with laser intensity. The decreasing of backward ions is probably due to Coulomb scattering by the heavier I"+ ions when they turn around through the laser focus ...

Science.gov (United States)

The Micro-X instrument is a NASA funded, rocket borne X-ray imaging spectrometer planned for launch in January 2011. An array of Transition Edge Sensors (TESs) will observe incoming photons in the 0.2-3 keV energy band with an energy resolution of 2-4 eV at 1 keV. This will be a substantial improvement over current non-dispersive detectors for X-ray spectroscopy of extended sources and will be the first demonstration of a TES-based microcalorimeter in space. The TESs will utilize the 50 mK stage of an Adiabatic Demagnetization Refrigerator (ADR) as a heat sink, and will be read out by a SQUID time division multiplexer. X-rays will be focused onto the TES array of 128 pixels on a 600 micron pitch by a conically approximated Wolter optic with an effective area of 200 cm2. The spectrometer will have a field of view of 11.8 arcmin. We describe the design and development progress of the instrument.

International Nuclear Information System (INIS)

The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. From the coincidence data, the new decay scheme was constructed. The previously reported 104.70, 105.95 and 774.15 keV #gamma# rays were observed, and have been assigned to the decay scheme for the first time. A newly observed 1508.01 keV #gamma# ray has also been assigned to the scheme for the first time. The intensities of #beta#"- and the values of log ft to most levels were calculated

International Nuclear Information System (INIS)

The L-shell x-ray intensity ratios I(L_#beta#)/I(L_#alpha#) and I(L_#gamma#)/I(L_a_l_p_h_a) for elements with 73 #<=# Z #<=# 83 have been measured at photon incident energies of 17.8, 25.8 and 46.9 keV. The emitted x-rays were measured with a Si(Li) detector system. The results for Re, Pt and Tl are being reported for the first time. A comparison is made of the experimental results with the calculated values obtained by using the theoretical x-ray emission rates, subshell ionisation cross sections, subshell fluorescence yields and Coster-Kronig transition probabilities. The experimental results are in reasonable agreement with the theoretical values. (author).

Energy Technology Data Exchange (ETDEWEB)

Research preformed consisted of: (1) publication of an experimental paper for the n + {sup 40}Ar high resolution total cross section and submission of a theoretical paper dealing with the prediction of the average parameters deduced from the the data; (2) preliminary R-matrix analysis of the neutron total cross section data for the n + {sup 208}Pb systems, up to an energy of 1.7 MeV; (3) completed the analysis of neutron total cross section of data for n + {sup 54}Fe up to energy of 500 keV, with j{sup {pi}} values confirmed, in most cases, by differential scattering data; (4) analysis of total cross section data for the n + {sup 88}Sr system up to an energy of 175 keV; (5) development of a graphical interface for the code RFUNC, used to calculate the differential scattering cross sections, for comparison with measurements.

International Nuclear Information System (INIS)

An ytterbium-169 high dose rate brachytherapy source, distinguished by an intensity-weighted average photon energy of 92.7 keV and a 32.015#+-#0.009 day half-life, is characterized in terms of the updated AAPM Task Group Report No. 43 specifications using the MCNP5 Monte Carlo computer code. In accordance with these specifications, the investigation included Monte Carlo simulations both in water and air with the in-air photon spectrum filtered to remove low-energy photons below 10 keV. TG-43 dosimetric data including S_K, D(r,#theta#), #LAMBDA#, g_L(r), F(r,#theta#), #phi#_a_n(r), and #phi#_a_n were calculated and statistical uncertainties in these parameters were derived and calculated in the appendix.

International Nuclear Information System (INIS)

The optical emission of excited H reflected from clean Cu(110) after impingement of H"+ and H_2"+ in the energy range of 250 eV to 20 keV per nucleon at 70"0 angle of incidence to the surface normal was measured. For incident 10 keV H_2"+, the highest excited hydrogen state detected was the n=10 level. The Hsub(#alpha#) yield was found to be fluence and energy dependent. This effect is attributed either to fast sputtered hydrogen, surface roughness or to an increase with hydrogen concentration in electron states of p-like symmetry near the Fermi level of copper. The Hsub(#alpha#) yield per reflected nucleon shows approximately an exponential dependence on both projectile energy per nucleon and scattered particle reciprocal velocity perpendicular to the surface. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The measurements of the K X-ray intensity ratio I(K{sub {beta}})/I(K{sub {alpha}}) for the 17 elements Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Rb, Sr, Y, Zr, Nb and Mo have been done following ionization by 59.5keV {gamma}-rays from a {sup 241}Am point source. Ratios of emission probabilities of Auger electrons and the vacancy transfer coefficients have been extracted in terms of the intensity ratios. It is found that the present results agree well with earlier fitted values and the semi-empirical values.

British Library Electronic Table of Contents (United Kingdom)

The mechanism of abrupt increase of the giant magneto impedance (GMI) ratio in the ion irradiated Co-based amorphous ribbon has been investigated. The grazing incident X-ray diffraction and transmission electron microscope were used to characterize the samples before and after ion irradiation. The GMI-ratio considerably increased in the ion irradiated samples and the GMI response showed strong dependence on the driving frequencies. The Barkhausen noise (BN) signals are increased for the Ar ion irradiated sample with dose of 1x10^1^7 ion/cm^2. The results are interpreted in terms of GMI variation associated with domain wall dynamics.

CERN Document Server

In aqueous solutions, dissolved ions interact strongly with the surrounding water, thereby modifying the solution properties in an ion-specific manner. These ion-hydration interactions can be accounted for theoretically on a mean-field level by including phenomenological terms in the free energy that correspond to the most dominant ion-specific interactions. Minimizing this free energy leads to modified Poisson-Boltzmann equations with appropriate boundary conditions. Here, we review how this strategy has been used to predict some of the ways ion-specific effects can modify the forces acting within and between charged interfaces immersed in salt solutions.

Energy Technology Data Exchange (ETDEWEB)

Analytical and numerical calculations are presented for a reflexing electron beam type of collective ion accelerator. These results are then compared to those obtained through experiment. By constraining one free parameter to experimental conditions, the self-similar solution of the ion energy distribution agrees closely with the experimental distribution. Hence the reflexing beam model appears to be a valid model for explaining the experimental data. Simulation shows in addition to the agreement with the experimental ion distribution that synchronization between accelerated ions and electric field is phase unstable. This instability seems to further restrict the maximum ion energy to several times the electron energy.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

International Nuclear Information System (INIS)

... kinetics chemical reactions energy dependence ion-molecule collisions milli

UK PubMed Central (United Kingdom)

Synthesis of wild-type Neurospora crassa assimilatory nitrate reductase is induced in the presence of nitrate ions and repressed in the presence of ammonium ions. Effects of several...Full Text Available

International Nuclear Information System (INIS)

An overview of different Ion Beam Analysis (IBA) techniques is given. Examples of applications of the PIXE techniques to various types of samples are presented. (author)

International Nuclear Information System (INIS)

An investigation of the Ll x-#gamma# angular correlations following the decay of "2"0"7Bi is done by using a Si(Li) semiconductor counter as L x-ray detector. Coincidence measurements at five different angles were made between the 570-keV #gamma# ray (gated in the movable counter) and the Ll x spectrum (displayed in a multichannel analyzer).

International Nuclear Information System (INIS)

Lead-203 [52.1 h, 279 (80.1%) KeV] has been recognized as a potentially useful tracer for tumor specific radiopharmaceuticals due to its favorable nuclear and chemical properties. This paper reports the cyclotron production of lead-203 and the labelling of monoclonal antibody B72.3, conjugated with 2-(p-isothiocyanatobenzyl)DOTA, with lead-203 in 30% yield. In vivo biodistribution and stability studies in mice are being conducted.

International Nuclear Information System (INIS)

We describe the continued development of a portable, real-time neutron spectrometer. The spectrometer is composed of two distinct detector systems: a Helium 3 gas filled proportional counter for the lower neutron energy interval between 20 KeV and 2 MeV and a bulk silicon solid state detector for the higher energy interval between 2 MeV and 500 MeV. Modeling and experimental results with mono-energetic neutron beams are reported.

International Nuclear Information System (INIS)

Molar extinction coefficients for the solid solutes in aqueous solutions of some alkaline earth chlorides such as MgCl_2.6H_2O, CaCl_2, SrCl_2.6H_2O and BaCl_2.2H_2O have been determined at 81, 356, 511, 662, 1173 and 1332 keV energies in different concentration using the narrow beam transmission methods. (author)

Energy Technology Data Exchange (ETDEWEB)

An experimental investigation was made of the ..gamma..-transitions feeding or de-exciting the 1355 keV isomeric state in /sup 177/Ta. The E2/M1 mixing ratios for the 311 keV interband transition from the isomer and for the 271 keV and the 295 keV intraband transitions within the rotational band on the isomer were determined to be delta = 0.29sup(+0.11)sub(-0.06), 0.25sup(+0.05)sub(-0.03) and 0.30sup(+0.06)sub(-0.08), respectively, employing combined measurements of the linear polarization and angular distribution of the ..gamma..-ray with the aid of conversion electron measurements. Spin and parity assignments of the isomer were confirmed to be 21/2/sup -/. The half-life of the isomer was remeasured to be Tsub(1/2) = 5.0 +- 0.2 ..mu..s and the magnetic moment was found to be ..mu.. = 0.080 +- 0.014 ..mu..sub(N). The gsub(K) and gsub(R) factors for the band on the isomer were deduced separately to be ...

Energy Technology Data Exchange (ETDEWEB)

The results of Sandia National Laboratories' participation in the NASA Planetary Definition and Design Program are summarized. Areas reported include the characterization of large area cadmium zinc telluride spectrometers and the application of simulation techniques to the prediction of device performance. Also investigated was the response of mercuric iodide devices in the region from 1 to 100 KeV. A literature study to determine the status or radiation damage measurements in room temperature semiconductor devices is also reported.

Energy Technology Data Exchange (ETDEWEB)

The INTEGRAL/SPI spectrometer was designed to observe the sky in the energy band of 20 keV to 8 MeV. The specificity of instrument SPI rests on the excellent spectral resolution (2.3 keV with 1 MeV) of its detecting plan, composed of 19 cooled germanium crystals; covering an effective area of 508 cm{sup 2}. The use of a coded mask, located at 1.7 m above the detection plan ensures to it a resolving power of 2.5 degrees. The aim of this thesis, begun before the INTEGRAL launch, is made up of two parts. The first part relates to the analysis of the spectrometer calibration data. The objective was to measure and check the performances of the telescope, in particular to validate simulations of the INTEGRAL/SPI instrument response. This objective was successfully achieved. This analysis also highlights the presence of a significant instrumental background noise. Whereas, the second part concentrates on the data analysis of the Vela region ...

International Nuclear Information System (INIS)

We conducted (n, #gamma#) and (d, p) reactions leading to "8"7", "8"8", "8"9"Sr in addition to "8"8Sr (d, t) "8"7Sr and 24 keV neutron capture in "8"8Sr. (orig./HSI).

Science.gov (United States)

The Plasma and Ion Source Technology Group at the Lawrence Berkeley National Laboratory have been developing rf-driven ion sources for the last two decades. These sources are being used to generate both positive and negative ion beams. Some of these sources are operating in particle accelerators such as the Spallation Neutron Source (SNS) at Oak Ridge, while others are being employed in various industrial ion beam systems. There are four areas where the rf-driven ion sources are commonly used in industry. (1) In semiconductor manufacturing, rf-driven sources have found important applications in plasma etching, ion beam implantation, and ion beam lithography. (2) In material analysis and surface modification, miniature rf-ion sources can be found in focused ion beam systems. They can provide ...

Energy Technology Data Exchange (ETDEWEB)

Neutral beam systems for the next generation of magnetic fusion devices will be based on negative ions. Developments are progressing steadily, and large negative ion-based systems are under preparation for JT60-U and LHD, and are being considered for ITER. An overview of the physics of the production, acceleration and neutralization of large negative ion beams is given. The present state of the art in R and D is also surveyed. (Author).

Energy Technology Data Exchange (ETDEWEB)

A summary of the topics covered in papers presented at the 1995 Brookhaven joint conference on production, neutralization, and application of negative ion beams is given. The conference topics covered included plasma ion sources, plasma seeding of these sources for increased ion production, beam extraction and transport, computer simulation and design studies, and operation of existing and experimental ion source facilities. Application of the sources to accelerator, tokamak, and thin film deposition are discussed. (AIP) {copyright} {ital 1996 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

The Holifield Radioactive Ion Beam Facility now under construction at the Oak Ridge National Laboratory will use the 25 MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility. The choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. Although direct-extraction negative ion sources are clearly desirable, the ion formation efficiencies are often too low for practical consideration; for ...

International Science & Technology Center (ISTC)

Development of Oxygen Ion-Implanted Collector materials for Thermal Emission Converters of Thermal Energy into the Electric One.

Energy Technology Data Exchange (ETDEWEB)

Negative ion intensities of over 3 x 10/sup 5/ A/m/sup 2/ at energies of 2 MeV have been measured in a magnetically insulated transmission line. This negative ion production can affect the power flow in multiterawatt pulsed power devices, and may also have applications in the generation of high-intensity neutral or negative ion beams.

International Nuclear Information System (INIS)

This report is a brief review of biological and medical applications of ion-track membranes. The review aims at informing nuclear physicists about alternative (i.e. non-fundamental-science) use of heavy ion accelerators such as production of micro- and nano-porous materials. The ion-track membranes produced this way are employed in life sciences and numerous technological applications. The author focuses on recent results from the Flerov laboratory in co-operation with other scientific institutions and industrial partners.

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Results are described of the study of the analytical applicability of a highly efficient ion source developed for a mass spectrometer. Its ionizer is in the form of a partially closed cavity with a small aperture for leading out ions, heated to a high temperature. The new ion source increases the sensitivity of the apparatus in operations with transuranium elements by almost two orders of magnitude. It is possible to perform isotopic analyses with a high salt content in the sample, and to study the characteristics of nuclear fuel, even without chemical separation of the sample elements.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

Density changes in amorphous Pd{sub 80}Si{sub 20} during ion irradiation below 100K were detected by in situ HVEM measurements of the changes in specimen length as a function of ion fluence. A decrease in mass density as a function of the ion fluence was observed. The saturation value of the change in mass density was determined to be approximately -1.2%.

International Nuclear Information System (INIS)

The paper contains a numerical evaluation of the expressions for the absorptive potential in heavy ion reactions given earlier. With a standard folding expression for the real part of the ion-ion potential general good agreement is found with experimental data for the angular distributions of elastic and inelastic scattering. Special interest is attached to the case of "1"6O + "2"8Si where the calculated imaginary potential is very small at low bombarding energies. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Ion neoclassical transport with finite orbit width dynamics is calculated over whole poloidal cross section by using accurate {delta}f method which employs an improved like-particle collision operator and an accurate weighting scheme to solve drift kinetic equation. Ion thermal transport near magnetic axis shows a great reduction from its conventional neoclassical level due to non-standard orbit topology, like that of previous {delta}f simulation. On other hand, the direct particle loss from confinement region may strongly increase ion energy transport near the edge. It is found that ion parallel flow near the axis is also largely reduced due to non-standard orbit topology. In the presence of steep density gradient, ion thermal conductivity is significantly reduced, and an ion particle flux is driven by self-collision alone. (author)

Energy Technology Data Exchange (ETDEWEB)

This report reviews Soviet R and D of (1) high-intensity negative ion sources and (2) transport and focusing of negative ion beams, using Soviet open literature of the past ten years, and correlates this data with data on Soviet institutes responsible for negative ion beam development. The Soviets are developing intense negative ion beams as the basis for creating neutral beams for injection into mirror traps and tokamaks, for inertial confinement fusion, and possibly for exoatmospheric beam weapon applications. The report focuses specifically on surface-plasma-type ion sources, which were first developed in the USSR and which show great promise for creating beams of high intensity, high brightness, and low emittance. Mechanisms for optimum negative ion beam transport are also discussed.

Energy Technology Data Exchange (ETDEWEB)

The morphological evolution of ripples formed on the surface of Cd2Nb2O7 pyrochlore single crystals by focused ion beam (FIB) bombardment was investigated using in situ electron microscopy. At high ion fluences and off-normal bombardment angles, faceted surface ripples with a terrace-like structure were observed. The ripple propagation direction was oriented along the projected ion beam direction at incident angles ranging from 35 to 65 following high-dose ion bombardment. One side of the terrace was found to be perpendicular to the incident ion beam direction, while the other side was parallel to the ion beam. The terrace propagation velocity and direction were determined and interpreted on the basis of this asymmetric structure. A model based on the propagation of a shock wave that effectively self-selects a stable slope, was developed in order to explain the ...

International Nuclear Information System (INIS)

There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials.