We report resistivity and thermopower measurements of the heavy fermion compound CePd{sub 2}Si{sub 2} at pressures up to 56 kbar. At pressures from 21 to 34.5 kbar, we measured the resistivity down to 30 mK, for all other pressure steps the temperature range was 1.2-300 K. (orig.).
We report resistivity and thermopower measurements of the heavy fermion compound CePd_2Si_2 at pressures up to 56 kbar. At pressures from 21 to 34.5 kbar, we measured the resistivity down to 30 mK, for all other pressure steps the temperature range was 1.2-300 K. (orig.).
Two examples of heavy-fermion systems are presented : CePd{sub 2}Si{sub 2}, an antiferromagnet with a quantum critical point at P{sub C}=28 kbar and UGe{sub 2} an itinerant ferromagnet which transits in a paramagnetic phase above P{sub C}=16 kbar. In CePd{sub 2}Si{sub 2} the superconductivity domain is centered on P{sub C}. Special attention was given to the superconducting and magnetic anomalies at their superconducting and Neel temperatures. In UGe{sub 2} superconductivity appears in 9 kbar at a temperature T{sub S}, more than two orders of magnitude lower than the Curie temperature; furthermore, it occurs only on the magnetic border (P<P{sub C}). Another characteristic temperature T{sub X} is detected by resistivity; the zigzag uranium chain of the lattice may favor a supplementary nesting in the majority spin band.
Graphite intercalation compounds, Rb{sub x}KC{sub 8}, Cs{sub x}KC{sub 8} and Na{sub x}KC{sub 8}, x{approx equal}1-1.3, are obtained under pressures up to 80 kbar using KC{sub 8} as the initial compound. Total contents of alkali metals in these compounds correspond to the formula MC{sub 3.5-4.0}. (orig.).
We report the results of a linearized augmented-plane-wave calculation of the electronic structure of fcc La at three lattice constants corresponding to ambient pressure, 50, and 120 kbars. The Kohn-Sham-Gaspar approximation for exchange and correlation is used and the potential is allowed a fully non-muffin-tin form. The f bands lie approx.2--2.5 eV above the Fermi level and are approx.1 eV wide, resulting in a very small (0.05 electrons) localized f occupation. Under pressure the f bands rise and broaden appreciably, resulting in only a slight increase in f occupation. The rigid-muffin-tin approximation for the electron-phonon interaction lambda overestimates the superconducting transition temperature T/sub c/ by 40%, but we find that the drastic increase in T/sub c/ under pressure can be attributed primarily to changes in the electronic stiffness eta. Structural transitions which occur at 25 and 53 kbars may be related to changes in ...
We investigate the possibility of producing the $\\omega\\phi$ threshold enhancement recently observed in the $J\\psi\\to\\gamma X(1812),~X(1812)\\to\\omega\\phi$ at BES by assuming the X(1812) to be a candidate of $(K^{*}\\bar K^{*0})$ molecular state. We evaluate the decay rate of $X(1812)\\to\\eta\\eta', \\eta\\eta, \\omega\\phi, K^+K^-, \\rho^+\\rho^-$, $\\omega\\omega, K^{*+}K^{*-}$ and $\\pi^+\\pi^-$ based on the X(1812) to be a candidate of $(\\ksks)$ molecule. It turns out the X(1812) dominantly decays into $\\eta\\eta'$ and $\\eta\\eta$. These channels are suggested to be the laboratory to test the molecular scenario in experiment. We also evaluate the branching fraction $Br(X\\to\\omega\\phi)\\simeq 4.60%$. However, the X(1812) has small branching fractions to decay into other $VV$ or $PP$ final states, from which it seems to be consistent with the experimental observation. In the molecular scenario, the X(1812) production rate is also evaluated to be ...
Red laser diodes emitting at 636 nm and 645 nm are studied as a function of pressure up to 20 kbar and temperature from 300 K down to 80 K. The 636 nm samples reveal anomalous L-I-V dependence at low temperatures and at high pressures. The 645 nm samples do not show these anomalies and can be tuned by pressure and temperature down to 575 nm, i.e., in the 70 nm range with powers above 200 mW and low threshold currents. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
The cross-over from a magnetically ordered to a non-magnetic spin liquid state has been investigated in a series of resistance measurements under hydrostatic pressures of up to 30 kbar and at temperatures down to below 200 mK in the heavy fermion antiferromagnet CePd{sub 2}Si{sub 2}. The electrical resistivity changes dramatically with increasing pressure. Near the critical pressure, at which the magnetic ordering temperature is extrapolated to zero, it exhibits a quasi-linear variation over two orders of magnitude in temperature. This non-Fermi liquid form of {rho}(T) extends down to the onset of a new superconducting transition below 430 mK. (orig.).
The cross-over from a magnetically ordered to a non-magnetic spin liquid state has been investigated in a series of resistance measurements under hydrostatic pressures of up to 30 kbar and at temperatures down to below 200 mK in the heavy fermion antiferromagnet CePd_2Si_2. The electrical resistivity changes dramatically with increasing pressure. Near the critical pressure, at which the magnetic ordering temperature is extrapolated to zero, it exhibits a quasi-linear variation over two orders of magnitude in temperature. This non-Fermi liquid form of #rho#(T) extends down to the onset of a new superconducting transition below 430 mK. (orig.).
The intermediate valent behaviour of YbPd_2Si_2 has been studied under pressure in the temperature range from 1.2 K to 90 K by using the 84 keV Moessbauer transition in "1"7"0Yb. At 54 kbar and 4.2 K we obtain an increase of the electric field gradient (EFG) by a factor of #approx =# 3. In addition, the EFG varies strongly with temperature, in contrast to the behaviour at ambient pressure. At 1.2 K a change of the hyperfine pattern is observed indicating a magnetic character of the Yb ion. These results provide evidence of a pressure induced change of the valence state close to 3+. (orig.).
Coilguns have the ability to provide magnetic pressure to projectiles which results in near constant acceleration. However, to achieve this performance and control projectile hearing, significant constraints are placed on the design of the coils. We are developing coils to produce an effective projectile base pressure of 100 MPa (1kbar) as a step toward reaching base pressures of 200 MPa. The design uses a scalable technology applicable to the entire range of breech to muzzle coils of a multi-stage launcher. This paper presents the design of capacitor-driven coils for launching nominal 50 mm, 350 gram projectiles. Design criteria, constraints, mechanical stress analysis, launcher performance, and test results are discussed.
The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO_2 films was studied. A 'blue'-shift of PL spectrum from the SiO_2 films implanted with Si"+ ions to total dose of 1.2x10"1"7 cm"-"2 with increase in hydrostatic pressure was observed. For the films implanted with Si"+ions to a total dose of 4.8x10"1"6 cm"-"2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)
The isostructural #gamma#-#alpha# phase transition of Ce which occurs at 8 kbar has been studied by means of fully self-consistent (non-muffin-tin potential) linearized-augmented-plane-wave energy band calculations carried out for five different values of the lattice constant. In contradiction to the 4f electron promotional model of the transition, the results yield essentially one 4f electron to be occupied in each phase but with the 4f wave function somewhat less localized, and therefore more bandlike, in the ''collapsed'' #alpha# phase. A singly occupied 4f state is shown to be consistent with the available experimental data. These results strongly support the picture of a 4f localized bold-arrow-left-right itinerant transition at the #gamma#-#alpha# transition and conflict with the promotional model in which some fraction of 4f electrons are transferred to the sd conduction bands. The weaker bonding of the 4f electrons, compared to that of the 6s-5d valence ...