International Nuclear Information System (INIS)

There is increasing use of radiofrequency radiation (RFR) in industry for communications, welding, security, radio, medicine, navigation etc. It has been recognised for some years that RFR may interact with cardiac pacemakers and steps have been taken to prevent this interference. It is less well recognised that other metallic implants may also act as antennas in an RFR field and possibly cause adverse health effects by heating local tissues. There are a large and increasing number of implants having metal components which may be found in RFR workers. These implants include artificial joints, rods and plates used in orthopaedics, rings in heart valves, wires in sutures, bionic ears, subcutaneous infusion systems and (external) transdermal drug delivery patches"1. The physician concerned with job placement of such persons requires information on the likelihood of an implant ...

International Nuclear Information System (INIS)

Purpose of this work is to investigate the role of Helical CT and the usefulness of three-dimensional (3D) imaging for pre-operative planning and follow-up of reconstructive maxillofacial surgery with alloplastic material in neoplastic disease involving this region. From 1996 to 1999 eleven patients were examined with Helical CT and 3D images for planning of maxillofacial plastic and reconstructive surgery for advanced cancer of this anatomically complex region. A 3D-modulated titanium mesh (100%) or micro nets was used to rebuild the anterior surface of maxillary bone and the orbital floor. The mesh was cut to the appropriate size and shape and curved where necessary. Within the residual sinusal cavity a siliconed filling was used surmounting an acrylic prosthesis with dental arch to rebuild the palate. A rehydrated bovine pericardium was affixed and moduled on the borders in two cases only. Three-dimensionally reconstructed CT images were obtained preoperatively ...

Energy Technology Data Exchange (ETDEWEB)

Endoluminal vascular prostheses that can be implanted by percutaneous routes represent the most recent development in vascular interventional radiology. Various commercially available types of prosthesis are presented and the construction principles and applications are described. At present secure indications for the implantation of endoluminal prostheses are limited to the elimination of aneurysms and arteriovenous fistulae of the large vessels near the trunk in sections that do not cross a joint. The wide use in peripheral occlusive diseases cannot yet be recommended because confirmed data are not available. (orig.) [German] Endoluminale Gefaessprothesen, die perkutan implantierbar sind, stellen die juengste Entwicklung in der vaskulaeren interventionellen Radiologie dar. Verschiedene kommerziell erhaeltliche Prothesentypen werden vorgestellt, ihr Konstruktionsprinzip und ihre Applikation erlaeutert. Die gesicherten ...

International Science & Technology Center (ISTC)

Development of Oxygen Ion-Implanted Collector materials for Thermal Emission Converters of Thermal Energy into the Electric One.

Science.gov (United States)

... 4 Joint Committee on Atomic Energy as a Model . . . . . ... Joint Committee on Atomic Energy as a Model ...

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PMID:4317460

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Not Available

Environmental Research Database

No further description is available

Science.gov (United States)

... CJCSI 3141.01C, Responsibilities for the Management and ... of a multivolume set of CJCS unclassified and ... (1) CJCSM 3122.01A, Joint Operation ...

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... Admiral Olson mentions the requirement for a standing joint task force headquarters in USSOCOM in order to fulfill the command's charter as a ...

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... THE STANDING JSOTF HEADQUARTERS IN A STANDING JOINT TASK FORCE HEADQUARTERS OR COMBATANT COMMAND ...

UK PubMed Central (United Kingdom)

BackgroundThe successful use of zirconia ceramics in orthopedic surgery led to a demand for dental zirconium-based implant systems. Because of its excellent biomechanical characteristics,...Full Text Available

UK PubMed Central (United Kingdom)

This article describes issues concerning music perception with cochlear implants, discusses why music perception is usually poor in cochlear implant users, reviews relevant data, and describes...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

An assessment of the joint shear strength of exterior concrete beam-column joints reinforced internally with Glass Fibre Reinforced Polymer (GFRP) reinforcements under monotonically increasing load on beams keeping constant load on columns is carried out in this study. Totally eighteen numbers of specimens are cast and tested for different parametric conditions like beam longitudinal reinforcement ratio, concrete strength, column reinforcement ratio, joint aspect ratio and influence of the joint stirrups at the joint. Also finite element analysis is performed to simulate the behaviour of the beam-column joints under various parametric conditions. Based on this study, a modified design equation is proposed for assessing the joint shear strength of the GFRP reinforced beam-column specimens b...

International Science & Technology Center (ISTC)

Morphological, Electrophysiological and Behavioral Investigations of the Nervous Tissue Developed from the Embryonic Matrix Zone Cells of the Dorsolateral Walls of Lateral Ventricles, Implanted into the Lesioned Regions of the Adult Rat's Brain

UK PubMed Central (United Kingdom)

Fluorescein angiography of the iris was performed on patients with plastic lens implants with cystoid oedema of the macula, and the nature of the vascular changes was compared with controls provided...Full Text Available

UK PubMed Central (United Kingdom)

Hyaluronan (HA) is important for joint cavitation, lubrication, volume regulation and synovial fluid drainage but little is known about the regulation of joint HA synthesis/secretion in vivo....Full Text Available

Science.gov (United States)

Special Operations Forces (SOF) within a Joint Task Force are controlled by a Joint Special Operations Task Force (JSOTF). Presently, JSOTF headquarters are formed around the core of the Theater Special Operations Command (TSOC), a service SOF headquarter...

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Information superiority provides the Joint force a competitive ... Information Grid (GIG) as it matures and fills the needs of the Joint Task Force ... representatives from The Army Secretariat, Headquarters Department of Army ...

British Library Electronic Table of Contents (United Kingdom)

The addition of ?-Sialon nanoparticles to lubricants in heavy-duty frictional joints is shown to be effective.

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... Chiefs of Staff, Joint Operation Planning and Execution System (JOPES) Volume I, Planning and Procedures, CJCSM 3122.01A (Washington, DC ...

KoreaScience (Korea)

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International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

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British Library Electronic Table of Contents (United Kingdom)

Statement of problem Porcelain fracture associated with an implant-supported, metal ceramic crown or fixed partial denture occurs at a higher rate than in tooth-supported restorations, according to the literature. Implant-specific and patient-specific causes of ceramic failure have not been fully evaluated. Purpose The purpose of this retrospective study was to evaluate the potential statistical predictors for porcelain fracture of implant-supported, metal ceramic restorations. Material and Methods Over a 6-month period, a consecutive series of patients having previously received implant-supported, metal ceramic fixed restorations were examined during periodic recall appointments. The number of supporting implants, number of dental units, type of restoration, date of prosthesis insertion, ...

Energy Technology Data Exchange (ETDEWEB)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted ...

Energy Technology Data Exchange (ETDEWEB)

High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.

International Nuclear Information System (INIS)

Published in summary form only.

Medline Plus

... many bones. The bones are separated by special hinges called joints. Muscles make the bones move on ...

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

The Joint Convention on the Safety of Spent Fuel management and on the Safety of Radioactive Waste Management is the first legal instrument to directly address the safety of spent fuel and radioactive waste management on a global scale. The Joint Convention entered into force in 2001. This paper describes its process and its main achievements to date. The perspectives to establish of a Global Waste Safety Regime based on the Joint Convention are also discussed. (authors)

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Joint Diseases

Energy Technology Data Exchange (ETDEWEB)

Austenitic stainless steels have been implanted with molybdenum ions (Mo[sup +], 100 keV, 2.5 x 10[sup 16] atoms cm[sup -2]). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of [approx] 1000 A with a maximum molybdenum concentration of [approx] 9 at.% Mo located at [approx] 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H[sub 2]SO[sub 4] have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted ...

Energy Technology Data Exchange (ETDEWEB)

A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...

International Nuclear Information System (INIS)

This work is concerned with the development and application of ion implantation techniques for improving the corrosion resistance of zircaloy-4. The corrosion resistance in nitrogen implanted zircaloy-4 under a 120 keV nitrogen ion beam at an ion dose of 3 x 10"1"7 cm"-"2 depends on the implantation temperature. The characteristics of surface oxidation and corrosion resistance were analyzed with the change of implantation temperature. It is shown that as implantation temperature rises from 100 to 724 C, the colour of specimen surface changes from its original colour to light yellow at 100 C, golden at 175 C, pink at 300 C, blue at 440 C and dark blue at 550 C. As the implantation temperature goes above 640 C, the colour of surface changes to light black, and the surface becomes a little rough. The corrosion resistance of zircaloy-4 implanted ...

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

International Nuclear Information System (INIS)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated ...

UK PubMed Central (United Kingdom)

BackgroundModern metal-on-metal hip resurfacing implants are being increasingly used for young and active patients, although the long-term outcome and failure mechanisms of these...Full Text Available

International Nuclear Information System (INIS)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant ...

UK PubMed Central (United Kingdom)

Experienced users of the Clarion cochlear implant were tested acutely with the HiResolution (HiRes) and HiRes Fidelity120 (F120) processing strategies. Three psychophysically-based tests were...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundThe aim of this study is to examine how clinicians and patients negotiate clinical need and treatment decisions within a context of finite resources. Dental implant treatment...Full Text Available

UK PubMed Central (United Kingdom)

The latest-generation cochlear implant devices provide many deaf patients with good speech recognition in quiet listening conditions. However, speech recognition deteriorates rapidly as the level of...Full Text Available

International Nuclear Information System (INIS)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si ...

UK PubMed Central (United Kingdom)

BackgroundOne-stage implant placement has clinically acceptable treatment outcomes. Among other advantages, it may allow investigation of early wound healing. The...Full Text Available

UK PubMed Central (United Kingdom)

Although collagen-containing implants are widely used in various surgical applications, there has been relatively little attention paid to the possibility that this type of biomaterial may undergo pathologic...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

An effective rehabilitation strategy is proposed to enhance the strength and stiffness of the beam-column joint in this study. An analytical model is proposed to predict the column shear of the joints strengthened with carbon fiber reinforced polymer (CFRP). Three full scale interior beam-column joints, including two specimens strengthened with CFRP and one prototype specimen, are tested in this study. The specimens are designed to represent the pre-seismic code design construction in which there is no transverse reinforcement. A new optical non-contact technique, digital image correlation (DIC), which can measure the full strain field of specimen, is used to measure and observe the full strain field of the joint. The experimental results show that the beam-column joints strengthened with ...

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

Energy Technology Data Exchange (ETDEWEB)

The theoretical alignment limit for focused ion beam (FIB) implantation was deduced from the calculated resolution for the detection of an alignment mark. The alignment resolution varies with the signal to noise ratio and there is an optimum current which gives the best resolution. The alignment resolution epsilon/sub sigma/ is approximately 0.006 ..mu..m for a 160 keV Si/sup ++/ beam from our FIB implanter. The measured alignment error is approximately 0.06 ..mu..m and the main reason of this discrepancy is vibration. The ultimate limit on the alignment error can be reached through improvements in the implanter system.

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

Energy Technology Data Exchange (ETDEWEB)

One of the effective methods of deep modification of the surface of steels and alloys is the combination of ion implantation and plasma nitriding. In this work, the long-range effect is demonstrated in the case of combination of the effect of high- and low-energy ions of nitrogen on a martensitic steel for each ion implantation is usually not effective, and a titanium alloy used widely in industry.

UK PubMed Central (United Kingdom)

AIM: To evaluate the effects of percutaneous ozone injection via the posterior-lateral route and inner margin of the facet joint in the treatment of large lumbar disc herniation.METHODS:...Full Text Available

International Nuclear Information System (INIS)

Exact anatomic knowledge about the location of the gonads and the application of corresponding measures of radiation protection are the preconditions for an efficient reduction of the danger of a possible genetic damage as a result of radiation exposition during X-ray examination of the hip joint of newborns. (VJ).

UK PubMed Central (United Kingdom)

We studied multi-joint coordination during tasks of transporting real and imaginary objects with two arms. One of the arms was unexpectedly arrested in one third of trials performed. In the...Full Text Available

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... II Item Identification 1,2,3,4,5,,3JAN Joint Army-Navy 2 5,6,13 IIM Item Intelligence 2 JANAP Joint Army-Navy-Air 2,7 Maintenance Force Publication ...

UK PubMed Central (United Kingdom)

Examination of a painful hip is fairly concise and reliable at detecting the presence of a hip joint problem. Hip joint disorders often go undetected, leading to the development of secondary disorders....Full Text Available

International Nuclear Information System (INIS)

The structure of a demountable vacuum joint designed for operation from -120 to +120 deg C is developed and tested. Requirements of especially low gas release from the materials used have been fulfilled; the same concerns low sealing efforts, repeated action and keeping tightness under loads, indium being used as a sealant. Experimental studies of demountable vacuum joints, dia 100,125,140,160,180 and 200 mm, with an indium sealant permit to make the following conclusions: 1. The joints are sealed at sealing specific efforts of 0.4 kg/mm (without considering atmospheric pressure). 2. The joints retain tightness at opening and closing a cover five times and under +-120 deg C. 3. To ensure repeated operation of the joint with continued stable sealing effort, one should make sure the sealed surfaces coincide at repeated sealing. 4. When operating demountable vaccum ...

International Nuclear Information System (INIS)

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.

International Nuclear Information System (INIS)

P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

International Nuclear Information System (INIS)

We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

Energy Technology Data Exchange (ETDEWEB)

A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting ...

British Library Electronic Table of Contents (United Kingdom)

The colonization of an implant surface by bacteria is an extremely important medical problem, which often leads to the failure of medical devices. Modern surface modification techniques, such as ion implantation, can confer to the surfaces very different properties from those of the bulk underlying material. In this work, austenitic stainless steel 316 LVM has been superficially modified by Si^+ ion implantation. The effect of surface modification on the biocompatibility and bacterial adhesion to 316 LVM stainless steel has been investigated. To this aim, human mesenchymal stem cells (hMSCs), as precursor of osteoblastic cells, and bacterial strains relevant in infections related to orthopedic implants, i.e., Staphylococcus aureus and Staphylococcus epidermidis, have been assayed. For the ...

Energy Technology Data Exchange (ETDEWEB)

Japan Atomic Energy Research Institute (JAERI) and the High Energy Accelerator Research Organization (KEK) are promoting the joint project integrating both the Neutron Science Project (NSP) of JAERI and the Japan Hadron Facility Project (JHF) of KEK for comprehensive studies on basic science and technology using high-intensity proton accelerator. This document describes the joint project prepared by the Joint Project Team of JAERI and KEK to construct accelerators and research facilities necessary both for the NSP and the JHF at the site of JAERI Tokai Establishment. It was originally written in English and translated into Japanese with some corrections. (author)

Science.gov (United States)

... The second section describes the role and functions of a corps as a joint task force headquarters and uses Operation Uphold Democracy ...

Science.gov (United States)

(January 1999) - PDF File (36K)

Science.gov (United States)

runs are necessary, provision shall be made for expansion joints, motion of the units, or similar compensation to ensure that no excessive strains are ...

Science.gov (United States)

... Training System (JMATS) for joint C-130J training. However, the ... the C-130J's being procured by the Air Force. A logical ...

Energy Technology Data Exchange (ETDEWEB)

Published in summary form only.

Science.gov (United States)

... to integrate and synchronize SC efforts and capabilities, as noted in the SC Roadmap, the joint community needs to publish SC policy and expand ...

Energy Technology Data Exchange (ETDEWEB)

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H{sub 2}SO{sub 4}). Alloys with two nitrogen doses have been prepared (2.5x10{sup 16} and 2x10{sup 17} N atoms/cm{sup 2}). The implanted alloys have been characterized by {sup 15}N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen ...

International Nuclear Information System (INIS)

As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 ...

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...

Energy Technology Data Exchange (ETDEWEB)

The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si{sup +}, 1 {times} 10{sup 16}/cm{sup 2}, implant. A 4{times} larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10{times} smaller diffusion relative to markers without the MeV Si{sup +} implant. This data demonstrates that a 2 MeV Si{sup +} implant injects vacancies into the near ...

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of ...

International Nuclear Information System (INIS)

Authors obtained T1-weighted MRI images of the femoral head after fracture of the femoral neck and classified the signals into four patterns to investigate the sequential changes of the femoral head. The T1-weighted MRI images obtained initially after femoral neck fracture showed a normal pattern in 10 of the 15 hip joints studied. MRI images obtained subsequently still showed the normal signal pattern in eight of the 10 hip joints which had shown the normal pattern in the first MRI, while two of the 10 joints subsequently showed a band pattern. The joint with the homogeneous pattern in the first MRI subsequently showed a band pattern. Of the three joints with an inhomogeneous pattern in the first MRI, two joints showed a subsequent band pattern, and the other a normal pattern. The joints which showed a band pattern continued to show a ...

International Nuclear Information System (INIS)

As an engineered barrier system in the geological disposal of high-level waste, multibarrier system is considered. Multibarrier system consists of the vitrified waste, the overpack and the buffer. Bentonite is one of the potential material as the buffer because of its low water permeability, self-sealing properties, radionuclides adsorption and retardation properties, thermal conductivity, chemical buffering properties, overpack supporting properties, stress buffering properties, etc. As the construction technology of the buffer, the block installation method and in-situ compaction method, etc, are being investigated. The block installation method is to emplace the buffer blocks manufactured in advance at the ground facility, and construction processes of the block installation method at the underground will be simplified compared with the in-situ compaction method. However, the block joints of buffer might be a mechanical weak portion or might be a preferential ...

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which ...

British Library Electronic Table of Contents (United Kingdom)

Downregulation of anterior pituitary GnRH-receptors by application of a slow release GnRH-implant offers an effective and reversible alternative to surgical castration of the male dog. Aim of the present study was to test the efficacy and the underlying mechanisms of a new non-biodegradable controlled-release device implant (Gonazon, Intervet, containing 18.5mg of the GnRH-agonist Azagly-Nafarelin). Eight male beagle dogs were implanted s.c. at the para-umbilical region. In four dogs implant removal was after 180 days (group 1), in the other four dogs after 365 days (group 2). Eleven weeks after implantation availability of LH was reduced (p<0.0001) by 70%. After an initial increase lasting for about 4 days, testosterone (T) and estradiol (E2) concentrations decreased (p<0.0001) to basal l...

International Nuclear Information System (INIS)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of ...

Energy Technology Data Exchange (ETDEWEB)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion ...

Science.gov (United States)

Bone matrix gelatin, prepared by sequential chemical treatment including decalcification with 0.6 N hydrochloric acid [9], was used as an alloimplant for the treatment of benign bone tumours, tumorous conditions of bone, acetabular dysplasia, delayed union, traumatic bone defects and other disorders. The bone matrix gelatin implanted into bone defects was incorporated successfully in 98% of implantations, excluding cases of infection, tumour recurrence and recurrence of tumorous conditions. The material was also implanted into ten bone sites as an onlay but in five it was resorbed without new bone formation. The incorporation of the bone matrix gelatin into the recipient bed was completed from 6 to 33 months (average 14.9 months) after implantation. Wound infection complicated 5 of 165 implantations (3%) in previously uninfected sites. Low grade fever persisting after the tenth ...

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature ...

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The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work ...

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The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation ...

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model ...

International Nuclear Information System (INIS)

The penetration depth and concentration distribution for vanadium ions with low energy implanted into the dry peanut seeds is determined by scanning electron microscope and X-ray energy dispersion spectrometer. The results show that the depth-concentration distribution is a Gaussian distribution with a long tail and the maximum penetration depth is about 13.6 #mu#m for V"+ with 200 keV in cotyledon of the peanut. The experimental result of the implanted V"+ range in the peanut seeds is compared with the calculating value of the TRIM95

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

International Nuclear Information System (INIS)

An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

International Nuclear Information System (INIS)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

Energy Technology Data Exchange (ETDEWEB)

Measurements of human joint motion frequently involve the use of opto-electronic and other motion analysis systems where some type of makers are used to establish joint motion within a global reference coordinate frame. Typically, this global reference coordinate frame is chosen to be most convenient for the person carrying out the experiment in which the joint motion is measured, and Euler angles are chosen as the measure of joint motion. Results, however, may be quite arbitrary and therefore rendered meaningless if the reference frame is not properly chosen with respect to the physical joint axis. In order to make a proper choice of coordinate axes in the reference frame, one must take into consideration both the location and the orientation of die physical joint axis relative to the reference frame`s axes. In nature, joint axes can exist ...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

Energy Technology Data Exchange (ETDEWEB)

The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.

International Nuclear Information System (INIS)

The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.

UK PubMed Central (United Kingdom)

BackgroundThe routine removal of orthopaedic fixation devices after fracture healing remains an issue of debate. There are no evidence-based guidelines on this matter, and little...Full Text Available

International Nuclear Information System (INIS)

The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.

International Nuclear Information System (INIS)

English Jul 2001 p. 143-144 China Liu Changlong Academia Sinica,

Science.gov (United States)

... Abstract : Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. ...

International Nuclear Information System (INIS)

As to all sinter variations the microradiographic analysis showed that about 86 to 90 % of the implant surface were enclosed split-free with newly formed bone 16 weeks post operationem. A silicat salt addition of the test variation Ap_4_0KS_1_5 and Ap_4_0KS_3_0 did not cause a negative influence on bone regeneration. On the surface of all test implants a double layer was revealed radiologically, consisting of a 30 - 40 #mu#m thick bone near X-ray impermeable area and an X-ray permeable area of maximum 120 #mu#m thickness directed to the nucleus of the implant.

British Library Electronic Table of Contents (United Kingdom)

Placement of dental implants in the interforaminal region of the edentulous mandible is considered a safe and routine surgical procedure. Hemorrhage in the floor of the mouth has been reported as a rare, potentially life-threatening complication related to the placement of implants in this region. In this case report the authors present an immediate and a delayed case of massive bleeding in the floor of the mouth after implant placement. This highly vascularized region is vulnerable and bleeding can be induced easily by instrumentation, causing a vascular trauma, usually by perforation of lingual periostium. In almost all cases the expanding hematoma formation starts during surgery. The effect of the vasoconstrictive agent in the local anesthesic combined with an injury of the lingual arte...

British Library Electronic Table of Contents (United Kingdom)

ABSTRACT Purpose: The aim of this two-center study was to evaluate screw-type titanium implants with a chemically modified, sandblasted and acid-etched surface when placed in the posterior maxilla or mandible, and loaded 21 days after placement. Material and Methods: All 56 patients met strict inclusion criteria and provided informed consent. Each patient displayed either a single-tooth gap, an extended edentulous space, or a distal extension situation in the posterior mandible or maxilla. Eighty-nine dental implants (SLActive, Institut Straumann AG, Basel, Switzerland) were inserted according to an established nonsubmerged protocol and underwent undisturbed healing for a period of 21 days. Where appropriate, the implants were loaded after 21 days of healing with provisional restorations i...

International Nuclear Information System (INIS)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

Science.gov (United States)

... 1. Reeber, RR, Kusy, RP, Yu, N. and Chu, WK " Formation of a Solid Lubricant in Boron Carbide by Nitrogen Ion Implantation and Laser Annealing ...

Energy Technology Data Exchange (ETDEWEB)

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

International Nuclear Information System (INIS)

Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of carbon impurities.

International Nuclear Information System (INIS)

Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross ...

Energy Technology Data Exchange (ETDEWEB)

Twenty-seven patients with symptoms or clinical findings suggesting joint or bone disorders of the anterior chest wall (ACW) were evaluated by spiral CT with 3-dimensional (3-D) and multiplanar reconstructions. Preceding conventional ACW tomography was performed in 10 patients. ACW joint and bone changes were visualized more adequately by coronal 2-D reconstructions based on spiral CT than by conventional tomography. In addition, nonossified costal cartilages and soft tissue lesions were demonstrated. 3-D reconstructions sometimes added information, especially in patients with fracture and dislocation. (orig.).

British Library Electronic Table of Contents (United Kingdom)

Magnetic resonance (MR) imaging and histopathology were used to diagnose an articular process synovial myxoma in a dog. On MR images, the tumor was characterized by distortion of the left L1-L2 articular process, widening of the articular process joint, and the presence of a mass contiguous with the synovium of the articular process that displaced the spinal cord. The tumor was T2-hyperintense, T1-hypointense, relative to muscle, and had mild contrast enhancement. The MR features of articular process synovial myxoma may be distinct from other diseases of the articular process joint.

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Microscopy and chemotaxonomy from HPLC analysis of phytoplankton pigments initiated in 2003 suggest that Noctiluca miliaris blooms are becoming more intense ...

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Sep 8, 2005 ... one of the headquarters buildings here at Stennis, took off .... Also, they have a joint task force, that the ...

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... 2nd Battalion, 20th Special Forces Group, Company B ... Page 23. Headquarters, 29th Infantry Division, Joint Task Force-Augmentation ...

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... 2nd Battalion, 20th Special Forces Group, Company B ... Headquarters, 29th Infantry Division, Joint Task Force-Augmentation ...

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... 2nd Battalion, 20th Special Forces Group, Company B ... Headquarters, 29th Infantry Division, Joint Task Force-Augmentation ...

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... United States Forces Command, Detachment 13 ... EUCOM Headquarters Support Detachment 1 ... 7th Joint Task Force Augmentation Team ...

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... Concerning Persons and Organizations not Affiliated with the Department of Defense," January 7, 1980 (f) DoD 5240.1-R, "Procedures Governing ...

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... Prior to 1977, one group, the Joint Committee on Atomic Energy, had oversight. Since 1977, this responsibility has been ...

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... Joint Publication (JP) 5-0 (Washington DC: CJCS, 29 September ... and Execution System (JOPES) Volume 1. CJCSM 3122.01A (Washington, DC: 6 ...

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... Joint Publication (JP) 5 (Washington, DC: CJCS, 26 December 2006 ... Policies and Procedures, (Washington, DC: CJCSM, 3122.01A 29 September ...

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This paper summarizes the main features of four current REDD proposals: Compensated Reduction, Papua New Guinea et al; Joint Research Center; and Brazil. ... ...

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... Joint Staff and other US Military (ie, Army, Navy, Air ... HEART RATE, AND BODY TEMPERATURE DURING WORK IN MAN, DOG, AND SWINE. ...

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... WHS- Washington Headquarters Service ... but also with respect to other Joint, National and ... unit of action (UA) combat team or task force is organized ...

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... established in allied communications publications (ACP); DISA circulars (DISAC), Joint Army-Navy-Air Force publications (JANAP), and MAJ- COM ...

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... In this manner, a JBI-enabled COI would have the full suite of JBI information management capabilities, but would still be based on and have full ...

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... Joint Staff and other US Military (ie, Army, Navy, Air ... The major products of this work are significant advances in ... Keywords: Dogs; Laboratory animals ...

DEFF Research Database (Denmark)

OBJECTIVE: To evaluate the interobserver agreement of ultrasonographic assessment of finger and toe joints in patients with rheumatoid arthritis (RA) by 2 investigators with different medical backgrounds. METHODS: Ultrasonography and clinical examination were performed on 150 small joints of 30 patients with active RA. A General Electric LOGIQ 500 ultrasound unit with a 7-13-MHz linear array transducer was used. In each patient, 5 preselected small joints (second and third metacarpophalangeal, second proximal interphalangeal, first and second metatarsophalangeal) were examined independently on the same day by 2 ultrasound investigators (an experienced musculoskeletal radiologist and a rheumatologist with limited ultrasound training). Joint effusion, synovial thickening, bone erosions, and power Doppler signal were evaluated in accordance with an introduced 4-grade semiquantitative scoring system, on ...

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... Experts ( Appendix 5 ), and the NMFS-Sea Grant Joint Graduate Fellowship Program ( Appendix 6) . The Task Force consisted of one representative from NMFS Headquarters and 1-2 rep...

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9-foot 9-inch blocks of concrete with asphaltic-filled expansion joints. The concrete was placed on 4 to 6 inches of gravel or #4 stone. ...

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... WHS- Washington Headquarters Service. ... The standing Joint Task Force concept should be used more to provide warfighter forces and ...

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... the USCINCPAC staff and the staff of the commander, US Seventh Fleet, as a designated Pacific Command Joint Task Force Headquarters, in crisis ...

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... Page 25. US Department of Defense, Joint Operation Planning and Execution System, Vol 1, Planning Policies and Procedures (CJCSM 3122.01A). ...

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Feb 6, 2003 ... Director, Plans and Programs, Headquarters Air Force Materiel Command, .... Commander of the Joint Task Force Southwest Asia at Prince ...

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... (l0)6o). 316. Statf,'ent. In Hearings before the Subcommittee on Research, Do'v,-Iopment, and Radiation of the Joint Committee on Atomic Energy. ...

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joint task force (JTF), division (OIV) and regimental combat team (RCT) with ..... Headquarters, Department of the Army. (HQOA), (2010). Field Manual 2-0 ...

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess ...

UK PubMed Central (United Kingdom)

Background and ObjectivesClopidogrel resistance or low-responsiveness may be associated with recurrent atherothrombotic events after drug-eluting stent (DES) implantation. We prospectively...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Brachytherapy consists of sealed radioactive source implantation. The diversity in the nature of radioelements, in their energy and activity requires strict implantation and utilization rules. These rules include radioactive source physical parameters check, after-loading machine and treatment planning system quality assurance and safe and reproducible dosimetric systems. Patient and medical workers information guarantee radioprotection and prevention of accidental exposures. (authors)

UK PubMed Central (United Kingdom)

Purpose:To study the outcome of in-the-bag implanted square-edge polymethyl methacrylate (PMMA) intraocular lenses (IOL) with and without primary posterior capsulotomy in...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

The review provides a general idea about the types of metallic alloys and the pure metals used as implant materials in dental and orthopedic surgery. Their corrosive behavior in both real solutions and various media that model human biological fluids is described. Based on the literature data, it is concluded that multicomponent alloys containing titanium, niobium, zirconium, tungsten, molybdenum, aluminum, and silicon are the most resistant to corrosion. Implants made of different types of stainless steel are preferred when manufacturing orthopedic devices for short-term use.

Science.gov (United States)

The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly ...

International Nuclear Information System (INIS)

Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, TED was suppressed in the p"+/n junction ...

International Nuclear Information System (INIS)

In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate that end-of-range defects can be stabilized by choosing the ...

Science.gov (United States)

Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.

International Nuclear Information System (INIS)

Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.

British Library Electronic Table of Contents (United Kingdom)

Abstract Objectives: The purpose of this study was to evaluate the osseointegration of the dental implants placed into the mandible augmented with different techniques in pigs. Material and methods: Four adult domestic pigs were used. Horizontal augmentation of the mandible was performed in animals by using vascularized femur flap (VFF), non-vascularized femur graft (NVFG) and monocortical mandibular block graft (MG). After 5 months of healing 10 dental implants were placed into each augmented site. The pigs were sacrificed after 3 months of healing. Undecalcified sections were prepared for histomorphometric analysis. Results: Mean bone-implant contact (BIC) values for implants placed into MG, NVFG and VFF were 57.38 11.97%, 76.5 7.88%, 76.53 8.15%, respectively. The BIC values of NVFG and...

International Nuclear Information System (INIS)

The surface layer optimized in resistance of corrosion and wear has been obtained by W + C dual implantation on H13 steel. The electrochemical polarization measurements show that the peak current density I_D is increased and then saturated with increasing of voltage scanning loops. The I_D is 100 times smaller than that of H13 steel, and 2-3 times smaller than that of tungsten. Then influence of dual implantation order on corrosion resistance is also studied. The I_D for W_5C_8 implanted first with W is half of that for C_5W_5 implanted first with C. The corrosion resistance structure of the samples after corrosion is observed by SEM. The X-ray analysis indicates that the structure consists of disperse phases of WC, W_2C, FeW, Fe_2W, FeW_2C and iron carbides. It is shown from Auger analysis that the optimum complex layer for corrosion resistance consists of thin carbon film on surface, disperse phases ...

British Library Electronic Table of Contents (United Kingdom)

A joint experimental and theoretical analyses based on the grounds of DFT anharmonic potential and the use of a variational method allow us to revisit and assign the gas phase spectra of vinylarsine in the mid-IR area until 6300cm-1. Several weak and very weak bands corresponding to overtones and combinations are newly observed and assigned in complement to the fundamental bands.

Energy Technology Data Exchange (ETDEWEB)

Through a comprehensive and aggressive research program Consolidated Edison Company of New York, Inc. (Con Edison) has designed, developed, and installed several new products to address the environmental impact of dielectric fluid from pipe-type cable systems. These include: On Line Leak Detection, Leak Location, Retractable Flow Direction Indicator, Full Stop Joints, and Transition Joints. This paper describes the application of the aforementioned products on the Con Edison underground transmission system.

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According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Science.gov (United States)

A report is presented of a hearing conducted before the Joint Committee on Atomic Energy on August 27, 1976, to discuss the legal implications for reactor licensing resulting from court challenges to procedures for assessing the environmental impact of radioactive waste disposal. (DG)

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Transition joints in power plants between ferritic steels and austenitic stainless steels suffer from a mismatch in coefficients of thermal expansion (CTE) and the migration of carbon during service from the ferritic to the austenitic steel. To overcome these, nickel-based consumables are commonly used. The use of a trimetallic combination with an insert piece of intermediate CTE provides for a more effective lowering of thermal stresses. The current work envisages a trimetallic joint involving modified 9Cr-1Mo steel and 316LN austenitic stainless steel as the base materials and Alloy 800 as the intermediate piece. Of the two joints involved, this paper describes the choice of welding consumables for the joint between Alloy 800 and 316LN. Four consumables were examined: 316, 16-8-2, Inconel 82 and Inconel 182. The comparative evaluation was based on hot cracking tests and estimation of mechanical ...

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Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A ...

International Nuclear Information System (INIS)

Plasma immersion ion implantation (PIII) is an effective materials modification and synthesis technique but has seldom been applied to ceramic materials due to the high electrical resistance that reduces the ion bombardment energy and sometimes causes serious electrical arcing in the instrument. Even in cases where PIII is applicable, the surface properties of the implanted insulating materials can be seriously affected due to the low ion energy and materials damage from electrical arcing. In order to enhance the surface and mechanical properties such as wear resistance of ceramic materials used in many industrial applications, surface modification is needed. In this work, we conduct carbon implantation into sintered #alpha#-SiC (silicon carbides that are widely used in vacuum ceramic bearings) using mesh-assisted plasma immersion ion implantation to enhance the surface properties. The use of a ...

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We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

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We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

International Nuclear Information System (INIS)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

International Nuclear Information System (INIS)

The present work is a research of the effect of helium on the microstructure, mechanical properties and fracture behaviors of a type 316 austenitic steel. Helium implantation was performed by 30-MeV #alpha#-particle injection on very small size specimens, using a cyclotron. Average helium content in a He-deposited region was up to 2000 appm He. In the case of 2000appm He implantation, intergranular fracture was sometimes observed on the helium deposited region after tensile test at room temperature. At elevated temperature test, however, this material showed the transition of fracture mode from transgranular-ductile fracture at 773K to intergranular fracture at 873. In the case of 500 appm He implantation, the transition of fracture mode was recognized at a temperature range of 873K to 973K. (author).

British Library Electronic Table of Contents (United Kingdom)

Abstract Objective: To compare the vertical dimensional changes with regard to graft height in a long-term follow-up in patients treated with two different grafting materials used in maxillary sinus floor elevation procedures. Material and methods: Twenty consecutive patients were included. One group was grafted with autogenous bone from the mandible (chin area), and the other group was augmented with a 100%b-tricalcium phosphate (b-TCP). During a 4- to 5-year period, in each patient, at least five panoramic radiographs were made. These panoramic radiographs were used for morphometric measurements, at three different locations. The three locations were the first bone to implant contact at the distal side of the second most posterior implant (L1), halfway between this implant and the most p...

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

British Library Electronic Table of Contents (United Kingdom)

Abstract BACKGROUND: In Brazil, the usual forms of zinc (Zn) supply to coffee plants have limitations that compromise the element availability to the plant. This study proposes to test an alternative approach to supplying the nutrient to Coffea arabica L. using trunk implanted zinc tablets. Additionally, the effect of Zn on the production and quality of coffee beans was also evaluated. RESULTS: The highest total coffee bean production was recorded in plants implanted with Zn tablets (TA), while the lowest was recorded in the control treatment, without zinc supply (WZn), reaching a bianual production of 188.2 and 130.1 60-kg bags of processed beans per hectare, respectively. In the treatments where Zn were applied as tablet implantation or as foliage spraying (SZn); the bean size was larger...

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On 10 dialysis patients we performed 12 balloon dilatations, 2 catheter lyses, 6 stent implants (Palmaz stent) and one atherectomy of central venous stenoses or occlusions (v. subclavia, v. brachiocephalica) at the shunt arm of the patient. The primary success rate was, in balloon PTA and lysis, 12/14 interventions, and in stent placement and atherectomy 7/7. The angiographical and clinical primary result after stent implantation was significantly better than after conventional dilatation. After 66% of the balloon dilatations recidivation occurred within the first year; this can be treated by means of repeated PTA. Whether long-term exclusion of recurrence can be achieved by stent implantation, must be established by means of follow-up studies that are at present in progress. (orig.).

British Library Electronic Table of Contents (United Kingdom)

Abstract Introduction.- Infection is the worst complication seen with inflatable penile prosthesis (IPP). Both the American Medical Systems (AMS) and Coloplast IPP have infection retardant coatings. AMS is coated at the factory with rifampicin and minocycline (InhibiZone). The Coloplast IPP has a hydrophilic coating covalently bonded to its components that will absorb any aqueous solution before implantation and provides increased surface lubricity to decrease bacterial adherence. Aim.- We tested several antibiotic dips comparing zones of inhibition (ZOI) against five commonly infecting bacteria with coated Coloplast implants. Results were compared with those ZOI created with strips of an AMS IPP precoated with InhibiZone. Methods.- Pieces of sterile Coloplast Titan IPP were dipped in (i) ...

International Nuclear Information System (INIS)

Under the current design philosophy, reactor structures are to be designed to withstand large inelastic deformation caused by strong and severe ground motion. The design of the main structural elements and their connections are to be such that they always fail in ductile mode. This will ensure large energy absorption capacity of the structures under seismic excitation and avoid sudden and brittle failure of the structure. Over the years, a number of experimental investigations have been carried out on RC beam- column joints to study their behaviour and strength. However, these studies mostly pertain to small scale joints of moment resisting frame of residential buildings and commercial complexes. Information on full scale joints existing in NPP structures are scanty. Therefore, experimental programme was planned in the laboratory to construct identical large sized joints with the same reinforcement ...

Science.gov (United States)

A patient with a totally edentulous maxilla and a seVere Class III intermaxillary relationship in the anterior region was treated by implants. In the mandible, there were 10 teeth between the second premolars. The inclination and width of the maxillary anterior residual bone were measured on cephalometric X-ray film obtained before treatment. The results of cephalometric analysis did not support clockwise rotation of the mandible or lingual angling of the maxillary anterior teeth by use of prosthesis to improve the Class III relationship. Ten implants were simultaneously placed in the maxilla. Then, a maxillary temporary full bridge was seated after reduction of the crown lengths of the mandibular anterior teeth. An apically positioned flap operation was performed to eliminate periodontal pockets and to obtain clinically suitable crown lengths of the mandibular anterior teeth. A noncemented, screw-retained maxillary full bridge and a ...

UK PubMed Central (United Kingdom)

A ten week old girl who had previously undergone a palliative procedure for the hypoplastic left heart syndrome had unrelieved aortic coarctation that did not respond to standard balloon dilatation....Full Text Available

International Nuclear Information System (INIS)

High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is ...

UK PubMed Central (United Kingdom)

Background and purpose It has been speculated that the prevalence of metal allergy may be higher in patients with implant failure. We compared the prevalence and cause of revisions following...Full Text Available

Science.gov (United States)

... ADD137758. Title : The Oxidation Behavior of CoCrAlY, CoCrAl and Yttrium-Implanted CoCrAl Alloys Compared and Contrasted,. ...

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the ...

Energy Technology Data Exchange (ETDEWEB)

Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly ...

UK PubMed Central (United Kingdom)

BackgroundThis study aimed to assess whether endoscopic implantation of an injectable esophageal prosthesis, the Gatekeeper Reflux Repair System (GK), is a safe and effective therapy...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Plasma Immersion Ion Implantation (PIII) is a new hybrid technology for surface treatment of materials based on the principles of plasma nitriding and ion implantation. The equipment and the operation of the system are introduced. As well as providing an alternate method of ion implantation, it is possible to combine energetic ion bombardment with plasma nitriding. Different metal materials and treatment conditions have been studied. The capability of PIII-treatment to improve the properties of a wide range of metals has been proven. Application for forming tools and their industrial test has been successful. (orig.) [Deutsch] Die Plasmaimmersionsimplantation (PIII) ist eine neue Hybridtechnologie zur Behandlung von Werkstoffoberflaechen und basiert auf den Prinzipien des Plasmanitrierens und der Ionenimplantation. Die Anlagentechnik und die Arbeitsweise werden vorgestellt. Verfahrensspezifische Vorteile entstehen durch die ...

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The enhancement of positive secondary ion yields of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In/sup +/ were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5x10/sup 15/ to 4x10/sup 16/ O-atoms/cm/sup 2/. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si/sup +/ intensity is proportional to c(O)sup(x) (with x=1.4) in the concentration regime, 1.5<=c(O)<=30 at%. The O/sup +/ intensity shows a similar dependence for c(O)> or approx.20 at.%.

UK PubMed Central (United Kingdom)

An evaluation of totally implanted venous access systems inserted in 163 consecutive children with cancer is reported. From 1988 to 1994, 180 subcutaneous ports were inserted in children more than 1...Full Text Available

International Nuclear Information System (INIS)

MRT criteria have been developed to distinguish between tumour and implant material following examination of 50 patients who had transsphenoidal hypophysectomies for tumours. Judgements were based on the postoperative hormonal status and the operation notes. Following contrast injection of Gd-DTPA and using T_1 weighted spin-echo sequences, implant material appeared as sandwich-like, linear or circular structures. Residual recurrent tumour produced homogenous or non-homogenous aspects without marginal enhancement in 84% of cases. Postoperative displacement of the infundibulum to the opposite side was observed in 73% of patients with tumour remnants. Sensitivity of MRT was 70%, specificity 95%. There was a positive predictive value of 94% and a negative predictive value of 72% with an accuracy of 81%. This provides assistance in differentiating between tumour remnants and implant material. MRT is recommended as a method of ...

UK PubMed Central (United Kingdom)

AimsTranscatheter treatment of heart valve disease is well established today. However, for the treatment of tricuspid regurgitation (TR), no effective catheter-based approach is...Full Text Available

International Nuclear Information System (INIS)

Nb_3Sn films (Tsub(c)=17.8 K) were obtained by implantation of Sn"+ ions into Nb films (1500 A thick) after subsequent annealing. The annealing temperature required for the formation of the A15 phase in the implanted films was about 100 K higher than for Nb-Sn sandwich films evaporated at 300 K. The influence of the Sn concentration and of the annealing temperature was studied by measuring the sample resistance. The Nb-Sn compounds formed during the annealing process were analysed by measurements of the Moessbauer-effect of "1"1"9Sn. The implantation method was also used to produce Nb-Ge films with a ratio Ge/Nb approximately 1/3. The Ge-concentration and the temperature of the Nb-target (300-1070 K) were varied. These variations as well as subsequent annealing at 600-850"0C did not lead to superconducting transition temperatures above 8 K. (Auth.).

UK PubMed Central (United Kingdom)

Restenosis remains the main complication of balloon angioplasty and/or stent implantation. Preclinical testing of new pharmacologic agents preventing restenosis largely rely on porcine models, where...Full Text Available