WorldWideScience
1

Joined ceramic product  

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

2001-01-01

2

Single Molecule Source Reagents for CVD of Beta Silicon Carbide.  

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

1991-01-01

3

US Army workshop on low-heat-rejection engines (4th). Sessions report for 29-31 March 1989  

Energy Technology Data Exchange (ETDEWEB)

There are a number of characteristics exhibited by ceramic materials that may provide potential benefits for the reciprocating internal combustion engine. However, the brittle nature of these materials together with a variability in strength has created difficulties in applying ceramic materials to the engine environment. Although a wide range of physical properties is available from contemporary ceramic materials, a material offering consistently high strength has yet to be developed. For sliding-contact applications, desirable characteristics include good wear resistance, low friction, ability to join metals and good heat dissipation. Test results have shown that cam/follower components with cast iron cam sliding on a silicon nitride follower exhibit very low wear rates. The application of silicon carbide to face seals has also shown substantial reductions in both friction and wear when compared with ...

1989-03-31

4

Advanced Ceramic Technology  

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

2007-02-01

5

FIBROUS MONOLITH WEAR RESISTANT COMPONENTS FOR THE MINING INDUSTRY  

Energy Technology Data Exchange (ETDEWEB)

A set of materials property data for potential wear resistant materials was collected. These materials are designated for use as the ''core'' materials in the Fibrous Monolith structure. The material properties of hardness, toughness, thermal conductivity and cost were selected as determining factors for material choice. Data for these four properties were normalized, and weighting factors were assigned for each property to establish priority and evaluate the effects of priority fluctuation. Materials were then given a score based on the normalized parameters and weighting values. Using the initial estimates for parameter priority, the highest ranking material was tungsten carbide, with diamond as the second ranked material. Several materials were included in the trade study, and five were selected as promising ''core'' materials to include in this effort. These materials are tungsten ...

2001-08-15

6

Sintering of boron carbide and boron carbide-silicon carbide two-phase materials and their properties  

International Nuclear Information System (INIS)

Boron carbide is a high-technological ceramic material (it is used for lightweight armor, neutron absorbers, wear pieces, etc.). Hot pressing (2200"0C, 40 MPa, Ar atmosphere) and recently high isostatic pressing, are the best know ways for industrial preparation of boron carbide items. Pressureless sintering using metallic, inorganic, B+C, additives is not successful, since, despite having a high density, impurities remain present. Pressureless sintering of boron carbide (or silicon carbide composite) using free carbon addition, produced by in-situ pyrolysis of a Novolaque-type phenol-formaldehyde resin (#approx =# 9 wt%), is now possible in industry. A promising new method is the use of organic precursors, e.g. polycarbosilane with a small amount of phenolic resin, giving CSi and C by in-situ pyrolysis; the resulting boron carbide ceramics have high density ...

7

Joining of boron carbide using nickel interlayer  

International Nuclear Information System (INIS)

Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300degC a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by ...

8

Effect of mineralizer on the nitridation of sialon-bonded silicon carbide products  

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

9

Innovative Structural and Joining Concepts for Lightweight Design of Heavy Vehicle Systems  

Energy Technology Data Exchange (ETDEWEB)

The extensive research and development effort was initiated by the U.S. Department of Energy (DOE) in 2002 at West Virginia University (WVU) in order to investigate practical ways of reducing the structural weight and increasing the durability of heavy vehicles through the judicious use of lightweight composite materials. While this project was initially focused on specific Metal Matrix Composite (MMC) material, namely Aluminum/Silicon Carbide (Al/SiC) commercially referenced as ''LANXIDE'', the current research effort was expanded from the component level to the system level and from MMC to other composite material systems. Broadening the scope of this research is warranted not only by the structural and economical deficiencies of the ''LANXIDE'' MMC material, but also by the strong coupling that exists between the material and the geometric characteristics of the ...

2006-09-30

10

Performance of ceramics in ring/cylinder applications  

Energy Technology Data Exchange (ETDEWEB)

In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.

1987-01-01

11

Effect of Si_3N_4 whisker and SiC platelet addition on phase transformation and mechanical properties of the #alpha#/#beta# sialon matrix composites  

International Nuclear Information System (INIS)

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

12

Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum  

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

2011-01-01

13

Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure  

International Nuclear Information System (INIS)

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

2011-07-07

14

Macro-Cellular Silicon carbide Reactors for Nonstationary Combustion Under Piston Engine-Like Conditions  

British Library Electronic Table of Contents (United Kingdom)

Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.

2011-01-01

15

Neutronic aspects of the safety and environmental performance of silicon carbide as blanket structural material  

Energy Technology Data Exchange (ETDEWEB)

Safety and environmental assessments have been made of conceptual fusion power plant designs employing silicon carbide composites (SiC/SiC) as the first wall and blanket structure material. These have used similar analysis methods to earlier studies of designs based on vanadium alloy or low-activation martensitic steel, allowing direct comparisons. The very low short-term activation of silicon carbide results in an almost insignificant level of decay heat in postulated loss of coolant accidents, and a lower {gamma}-dose rate on the timescale of relevance to handling for maintenance operations. However on the longer time-scale, of interest in possible recycling operations, decommissioning and waste management, SiC/SiC appears to perform no better than vanadium alloy or low-activation martensitic steel, due in part to the activation of impurities in a realistic composition. Furthermore, its increased ...

2001-04-01

16

Investigation of #alpha#-sialon formation by high temperature X-ray diffraction  

International Nuclear Information System (INIS)

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of ...

1993-10-04

17

Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD  

Energy Technology Data Exchange (ETDEWEB)

Microcrystalline silicon carbide ({mu}c-SiC) was prepared at low substrate temperatures using Hot Wire chemical vapor deposition (HWCVD). High crystalline volume fractions were achieved at high hydrogen dilution and high deposition pressure. Without intentional doping, such material shows high dark conductivity and high optical absorption below the band gap. The material prepared at low deposition pressure or low hydrogen dilution, on the other hand, shows much lower conductivity and sub-gap absorption, but high spin densities up to 5 x 10{sup 19} cm{sup -3}. This high absorption can be attributed to free carriers, different to {mu}c-Si:H where a correlation between the sub-gap absorption and the spin density is observed.

2008-01-15

18

Design and fabrication of an 1-MW(th) ceramic tube bench-model solar receiver  

Energy Technology Data Exchange (ETDEWEB)

In 1976 the design and fabrication began of an 1 MWt Bench Model Solar Receiver (BMSR) to demonstrate and further develop the ceramic tube central receiver concept. Although many of the properties of silicon carbide are well documented, this material has never been utilized in an application of this type and size. Further investigation was undertaken to confirm the choice of silicon carbide against available metals and other ceramic materials. The BMSR is configured for testing at the Department of Energy's Central Receiver Test Facility in Albuquerque, New Mexico. Design and fabrication of the BMSR are highlighted in this report. Completion and testing of the BMSR are planned for the next phase of the project.

1982-05-01

19

Studies of dynamic contact of ceramics and alloys for advanced heat engines: Final report  

Energy Technology Data Exchange (ETDEWEB)

In support of the efforts to apply ceramics in advanced heat engines, a study was made of the sliding performance of ceramics at the ring/cylinder interface of low heat rejection engines. The objective was to understand the basic mechanisms controlling the wear of candidate ceramics and thereby identify means for applying these ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and several plasma-sprayed ceramic coatings without lubrication were unsuccessful because of high friction and high wear rates. Experiments using a polyalphaolefin lubricant at temperatures to 260 C identified several combinations having wear rates in the general range likely to be acceptable for engines. Plasma-sprayed coatings of chromium oxide and hypersonic powder flame sprayed coatings of cobalt-bonded tungsten carbide performed particularly well as ring coatings. Similar ...

1988-03-01

21

High-temperature ceramic receivers  

Energy Technology Data Exchange (ETDEWEB)

An advanced ceramic dome cavity receiver is discussed which heats pressurized gas to temperatures above 1800/sup 0/F (1000/sup 0/C) for use in solar Brayton power systems of the dispersed receiver/dish or central receiver type. Optical, heat transfer, structural, and ceramic material design aspects of the receiver are reported and the development and experimental demonstration of a high-temperature seal between the pressurized gas and the high-temperature silicon carbide dome material is described.

1980-01-01

22

Corrosion resistant coatings for silicon carbide heat exchanger tubes: Topical report  

Energy Technology Data Exchange (ETDEWEB)

This heat exchanger is a critical step in the development of the Externally Fired Combined Cycle power system, a direct-coal combustion power plant (gas turbine). SiC is the only material with the needed resistance to creep, thermal shock, and oxidation; however a protective coating is needed. Ten candidate materials were identified: alumina-based materials, materials stable with SiO, and low expansion materials. An initial screening study should be performed.

1996-09-01

23

Ceramic dome receiver technology developments  

Energy Technology Data Exchange (ETDEWEB)

The development and experimental demonstration of a high-temperature seal for the SHARE ceramic dome cavity receiver is reported. The mechanical contact seal which was tested on one-foot-diameter silicon-carbide ceramic-dome hardware at pressure differentials to four atmospheres and dome temperatures to 2200/sup 0/F (1200/sup 0/C) showed negligible leakage at expected receiver operating conditions. Potential solar receiver applications for the technology are illustrated.

1980-01-01

24

Material-induced shunts in multicrystalline silicon solar cells  

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-15

25

Material-induced shunts in multicrystalline silicon solar cells  

International Nuclear Information System (INIS)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-04-01

26

Material-induced shunts in multicrystalline silicon solar cells  

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

2007-01-01

27

Development of a Commercial Process for the Production of Silicon Carbide Fibrils  

Energy Technology Data Exchange (ETDEWEB)

The current work continues a project completed in 1999 by ReMaxCo Technologies in which a novel, microwave based, VLS Silicon Carbide Fibrils concept was verified. This project continues the process development of a pilot scale commercial reactor. Success will lead to sufficient quantities of fibrils to expand work by ORNL and others on heat exchanger tube development. A semicontinuous, microwave heated, vacuum reactor was designed, fabricated and tested in these experiments. Cylindrical aluminum oxide reaction boats are coated, on the inner surface, with a catalyst and placed into the reactor under a light vacuum. A series of reaction boats are then moved, one at a time, through the reactor. Each boat is first preheated with resistance heaters to 850 C to 900 C. Each reaction boat is then moved, in turn, to the microwave heated section. The catalyst is heated to the required temperature of 1200 C to 1300 C while a mixture of MTS (methyl ...

2003-04-22

28

XPS/AES Study of Electrical and Chemical Properties of Pd/SiC Interface  

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of ...

1997-11-01

29

Corrosion resistant coatings for silicon carbide heat exchanger tubes -- Volume 3. Final report  

Energy Technology Data Exchange (ETDEWEB)

The development of a silicon carbide (SiC) heat exchanger is a critical step in the development of the Externally-Fired Combined Cycle (EFCC) power system. SiC is the only material that provides the necessary combination of resistance to creep, thermal shock, and oxidation. While the SiC structure materials provide the thermomechanical and thermophysical properties needed for an efficient system, the mechanical properties of the SiC tubes are severely degraded through corrosion by the coal combustion products. To obtain the necessary service life of thousands of hours at temperature, a protective coating is needed that is stable with both the SiC tube and the coal combustion products, resists erosion from the particle laden gas stream, is thermal shock resistant, adheres to SiC during repeated thermal shocks (start-up, process upsets, shut-down), and allows the EFCC system to be cost competitive. This demanding set of technical performance and ...

1996-06-07

30

New materials to manufacture casting molds  

International Nuclear Information System (INIS)

A report is given on an improved filler-binder mixing method in the manufacture of artificial graphite, the so-called coat-mix process. The individual graphite-filler grains are coated completely with uniform binder coatings (phenol formaldehyde resin) in a continuous process. Methanol is used as solvent for the resin. In a modified further development of the process, the use of organic solvents can be disregarded by dissolving the binder resin in caustic soda and injecting the slurry into water diluted acid. The manufacture of casting molds from coat-mix powders, their properties and industrial application are given. Finally, the advantages of using carbon bodies of coal-mix material for conversion to silicon carbide are indicated. (IHOE).

31

Fuel elements and safety engineering goals  

International Nuclear Information System (INIS)

There are good prospects for silicon carbide anti-corrosion coatings on fuel elements to be realised, which opens up the chance to reduce the safety engineering requirements to the suitable design and safe performance of the ceramic fuel element. Another possibility offered is combined-cycle operation with high efficiencies, and thus good economic prospects, as with this design concept combining gas and steam turbines, air ingress due to turbine malfunction is an incident that can be managed by the system. This development will allow economically efficient operation also of nuclear power reactors with relatively small output, and hence contribute to reducing CO_2 emissions. (orig./DG).

32

Determination of uranium and thorium concentrations in integrated circuit packaging materials  

International Nuclear Information System (INIS)

The purpose of the present research is to find a suitable technique to measure trace amounts of uranium and thorium and to determine the surface #alpha#-flux in silicon compound (SiO) used for fabrication of integrated circuit packaging materials. Among several commonly-used detecting techniques, it was found that neutron activation analysis (NAA) was most promising. The results from NAA show a large difference in uranium and thorium concentrations when cadmium and boron carbide shields are used, whereas #alpha#-flux measurements show a low #alpha#-activity, which corresponds to the trace amounts of uranium and thorium expected to be present in these materials. (author) 13 refs.; 6 figs.

33

THE INFLUENCE OF GRAIN BOUNDARY CARBIDE ...  

Science.gov (United States)

... Title : THE INFLUENCE OF GRAIN BOUNDARY CARBIDE DENSITY ON THE BRITTLE FRACTURE OF FERRITE PEARLITE STEELS. ...

34

The compatibility of alloy 800 in HTR atmospheres  

International Nuclear Information System (INIS)

A thermodynamic analysis of the behaviour of Alloy 800 in helium based atmospheres relevant to the High Temperature Gas Cooled Reactor indicates that, depending upon the precise gas composition, oxidation and carburisation, or carburisation alone may be expected. The prime influence appears to be the moisture level. The morphology and structure of the reaction products are discussed. It is shown that the 'reactive' elements chromium, manganese, titanium and silicon are concentrated in the oxide scale which is normally duplex in structure. Aluminium oxide is formed at grain boundaries and in an internal oxidation zone together with titanium and sometimes silicon. In carburising conditions, mixed titanium-chromium carbides are formed. When this occurs, intergranular penetration is maximised. Weight gain data are assessed and briefly described and a tentative model for the mechanism of corrosion of Alloy 800 in HTR helium is ...

35

New synthesis routes for Sialon and Sialon-bonded ceramics  

International Nuclear Information System (INIS)

The use of Sialon ceramics has been restricted by the high temperature required for synthesis and the expense of the pure oxide and nitride raw materials required. For refractory applications the purity required is less demanding and it has been possible to exploit the outstanding durability of the Sialons at moderate cost. New low cost manufacturing routes are being developed by nitriding silicon metal powder at relatively low temperature with clay and various additives depending on the Sialon required. For example the introduction of carbon or fine silicon carbide allows the preparation of beta Sialons and alpha Sialons which can be stabilised by including the appropriate cations. A wide range of composite Sialon bodies with diverse properties can be prepared by a one step process. Current projects developing the synthesis routes are aimed, in the first instance, at refractory manufacture but are showing promise for more ...

1998-09-28

36

Investigation of weld cracking in alloy 800  

Energy Technology Data Exchange (ETDEWEB)

The subscale Varestraint test has been used to determine the relative hot cracking susceptibility of the fusion zone in four commercial heats of alloy 800. Although all four heats were susceptible to cracking, one heat exhibited a significant increase in cracking relative to the other three. Optical metallography revealed that nearly all the cracking was localized along fusion zone grain boundaries. Microprobe analysis of the grain boundaries detected high concentrations of titanium, silicon, and niobium resulting from partitioning during solidification. The fusion zone hot cracking mechanism in alloy 800 involves the complex interaction of titanium, silicon, niobium, and carbon along the solidification boundaries. SEM and Auger analyses of the hot crack fracture surfaces revealed the presence of (Ti, Nb)-rich carbides, suggesting that these particles precipitate from the liquid which solidifies last on the fracture ...

1984-03-01

37

Conversion of a plasma enhanced chemical vapor deposited silicon-carbon-nitride thin film at ultra-low temperature by oxygen plasma  

Energy Technology Data Exchange (ETDEWEB)

In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical analysis by X-ray photoelectron spectroscopy is reported for both the ...

2008-01-30

38

Preliminary study on improvement of cementitious grout thermal conductivity for geothermal heat pump applications  

Energy Technology Data Exchange (ETDEWEB)

Preliminary studies were preformed to determine whether thermal conductivity of cementitious grouts used to backfill heat exchanger loops for geothermal heat pumps could be improved, thus improving efficiency. Grouts containing selected additives were compares with conventional bentonite and cement grouts. Significant enhancement of grout alumina grit, steel fibers, and silicon carbide increased the thermal conductivity when compared to unfilled, high solids bentonite grouts and conventional cement grouts. Furthermore, the developed grouts retained high thermal conductivity in the dry state, where as conventional bentonite and cement grouts tend to act as insulators if moisture is lost. The cementitious grouts studied can be mixed and placed using conventional grouting equipment.

1996-06-01

39

Novel Processing of Unique Ceramic-Based Nuclear Materials and Fuels  

Energy Technology Data Exchange (ETDEWEB)

Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These include refractory alloys base on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as those based on silicon carbide (SiCf-SiC); carbon-carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor componets is necessary for improved efficiency. Improving thermal conductivity of the materials used in nuclear fuels and other temperature critical components can lower the center-line fuel temperature and thereby enhance durability and reduce the risk of premature failure.

2008-11-30

40

Intermediate Strain-Rate Loading Experiments - Technique and Applications to Ceramics  

Energy Technology Data Exchange (ETDEWEB)

A new test methodology is described which allows access to loading rates that lie between split Hopkinson bar and shock-loading techniques. Gas gun experiments combined with velocity interferometry techniques have been used to experimentally determine the intermediate strain-rate loading behavior of Coors AD995 alumina and Cercom silicon-carbide rods. Graded-density materials have been used as impactors; thereby eliminating the tension states generated by the radial stress components during the loading phase. Results of these experiments demonstrate that the time-dependent stress pulse generated during impact allows an efficient transition from the initial uniaxial strain loading to a uniaxial stress state as the stress pulse propagates through the rod. This allows access to intermediate loading rates over 5 x 10{sup 3}/s to a few times 10{sup 4}/s.

1999-08-16

41

Influence of SiC addition on tribological properties of SiAlON  

British Library Electronic Table of Contents (United Kingdom)

The tribological properties of gas pressure sintered SiAlON and its composite with 18wt% silicon carbide (SiC) against two different mating materials, i.e., alumina and SiAlON are evaluated. SiAlON and SiAlON-18%SiC composite ceramics were prepared by pressure less sintering and gas pressure sintering. Fretting wear tests were carried out under dry unlubricated ambient conditions (room temperature 23-25^oC; relative humidity 50-55%) with a load of 8N for 45,000 cycles. Friction and wear properties of SiAlON-SiC proved better than the monolithic SiAlON. The formation of silica roll like structure on the composite worn surface was observed.

2011-01-01

42

Korea Joins International Computing Infrastructure  

Science.gov (United States)

... Society Physics Press Release 05-175Korea Joins International Computing Infrastructure ... connectivity with Korea in a ceremony last month. Facilitated by the Korea Institute for Science and ...

43

Local composition analysis of SiC microstructures formed by ion projection in silicon using energy filtered TEM in combination with FIB specimen preparation  

International Nuclear Information System (INIS)

Buried silicon carbide (SiC) microstructures with lateral dimensions in the #mu#m range were formed by high-dose projection of 1.5 MeV C"2"+ ions in Si(100) at different doses and temperatures and subsequent annealing for 10 h at 1250 deg. C. Sections of individual SiC microstructures were prepared for cross-sectional transmission electron microscopy (TEM) analysis using a focused ion beam (FIB). Besides the possibility to select an individual microstructure, the FIB technique has the advantage of producing specimen foils of uniform thickness. Therefore, it was possible to map the carbon concentration of microstructures by energy filtered TEM (EFTEM) using the C_K absorption edge without the need of any sample thickness correction. Local overstoichiometric (>50%) carbon concentrations are shown to be correlated to the formation of an amorphous phase in the SiC and to significant swelling visible at the Si wafer surface 2 #mu#m above.

2003-09-15

44

Degradation of materials under conditions of the sulphur-iodine thermochemical cycle  

Energy Technology Data Exchange (ETDEWEB)

The need for a hydrogen economy is driven by increasing fuel prices, depleting oil reserves and uncertainty over supplies, and concerns about global warming and environmental pollution. Alternative methods to portable energy sources such as fossil fuels are being developed that are more efficient and carbon-emission-neutral. A prospective method is to produce hydrogen as an energy carrier. This paper presented a study on the degradation of materials under conditions of the sulphur-iodine (SI) thermochemical cycle. The paper provided background information on the study and presented a schematic of the SI cycle. A literature review was presented along with materials selected, such as refractory metals, reactive metals, superalloys, glassy metals, ceramics, cermets, polymers, composites, and coatings. The experimental method was then described. A capsule method was developed to rapidly quantify the decomposition rate of the candidate materials under the target conditions of temperature, ...

2009-07-01

45

Effects of mesh-assisted carbon plasma immersion ion implantation on the surface properties of insulating silicon carbide ceramics  

International Nuclear Information System (INIS)

Plasma immersion ion implantation (PIII) is an effective materials modification and synthesis technique but has seldom been applied to ceramic materials due to the high electrical resistance that reduces the ion bombardment energy and sometimes causes serious electrical arcing in the instrument. Even in cases where PIII is applicable, the surface properties of the implanted insulating materials can be seriously affected due to the low ion energy and materials damage from electrical arcing. In order to enhance the surface and mechanical properties such as wear resistance of ceramic materials used in many industrial applications, surface modification is needed. In this work, we conduct carbon implantation into sintered #alpha#-SiC (silicon carbides that are widely used in vacuum ceramic bearings) using mesh-assisted plasma immersion ion implantation to enhance the surface properties. The use of a conducting grid is necessitated by the high ...

2004-03-01

46

Correlating microstructure and thermal transport of irradiated SiC  

International Nuclear Information System (INIS)

Full text of publication follows: The effect of neutron irradiation on the thermal conductivity of silicon carbide can be dramatic depending on the irradiation temperature and fluence the material is subjected to, and may be a critical factor defining it's use in fusion systems. Historically there have been several papers describing the effect of neutron irradiation on thermal conductivity degradation of SiC, predominately in the low to intermediate temperature ranges. Practically all of this work has been at temperatures lower than the application temperature for SiC being considered by the conceptual fusion reactors. This paper provides new data on the thermal conductivity of high quality CVD silicon carbide irradiated in a range of doses and temperature spanning the proposed fusion reactor temperature range. Specifically, an irradiation was carried out from fractions milli-dpa to approximately 8 dpa ...

2007-12-10

47

Testing of Critical Features of Polysilicon MEMS  

Energy Technology Data Exchange (ETDEWEB)

The behavior of MEMS devices is limited by the strength of critical features such as thin ligaments, oxide cuts joining layers, pin joints and hinges. Devices fabricated at Sandia's Microelectronic Development Laboratory have been successfully tested to investigate these features. A series of measurements were performed on samples with gage lengths of 15 to 1000 microns, using conventional and tungsten coated samples as well as samples that include the critical features of standard components in the test section. Specimens have a freely moving pin joint on one end that anchors the sample to the silicon die to allow rotation to reduce effects of bending. Each sample is loaded in uniaxial tension by pulling laterally with a flat tipped diamond in a computer-controlled Nanoindenter. Load is calculated by resolving the measured lateral and normal forces into the applied tensile force and frictional losses. The specimen cross section and ...

1999-12-02

48

User's guide on butt heat-fusion joining of polyethylene gas pipes. Topical report, July 1986-September 1989. Volume 1  

Energy Technology Data Exchange (ETDEWEB)

Heat fusion is the most common joining method for polyethylene gas distribution piping. Butt fusion was studied with the intent of relating the quality of the joint to the joining conditions. A semi-empirical approach was used. The thermofluid consequences of joining conditions such as heater temperature, heating time and joining parameter were calculated using a computer model. The model was validated by instrumented tests. The strength of the joints was gauged by destructive mechanical testing. Tensile and tensile impact tests were used. Over 150 joints were fabricated using four different polyethylene resins. Most of the data are given in GRI Report No. 88/0276.2 -- Volume 2: Technical Reference on Butt Heat Fusion Joining of Polyethylene Gas Pipes. A parameter, termed the Joining Parameter, was found to characterize the joining ...

1989-09-01

49

Technical reference on butt heat-fusion joining of polyethylene gas pipes. Topical report, July 1986-September 1989. Volume 2  

Energy Technology Data Exchange (ETDEWEB)

Heat fusion is the most common joining method for polyethylene gas distribution piping. Butt fusion was studied with the intent of relating the quality of the joint to the joining conditions. A semi-empirical approach was used. The thermofluid consequences of joining conditions such as heater temperature, heating time and joining parameter were calculated using a computer model. The model was validated by instrumented tests. The strength of the joints was gauged by destructive mechanical testing. Tensile and tensile impact tests were used. Over 150 joints were fabricated using four different polyethylene resins. Most of the data are given in GRI Report No. 88/0276.2 -- Volume 2: Technical Reference on Butt Heat Fusion Joining of Polyethylene Gas Pipes. A parameter, termed the Joining Parameter, was found to characterize the joining ...

1989-09-01

50

Limitations of silicon devices for quantum computing  

Energy Technology Data Exchange (ETDEWEB)

There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

2004-04-28

51

Technical-economic evaluation of the utilization of closing resistor in CEMIG extra-high voltage circuit breakers  

Energy Technology Data Exchange (ETDEWEB)

This paper presents the technical and economic studies performed by CEMIG, Companhia Energetica de Minas Gerais, Brazil, concerning the use of closing resistor in its extra-high voltage (EHV) breakers. The analysis emphasizes the advantages which could be achieved with the elimination of the resistor as far as costs and reliability are concerned. This evaluation was motivated by two 500 kV breaker failures resulting from the breakdown of the closing resistor operation mechanism. These occurrences resulted in operative restriction for CEMIG EHV system. The analysis demanded a review of the capability criteria of silicon carbide (Si C) gap arresters, which are still greatly used in CEMIG EHV System, and of the procedures to be applied when carrying out the transient studies. The investigation resulted in the prompt removal of closing resistors from circuit breakers in CEMIG extra-high voltage system generating an economy of approximately U$ ...

1994-12-31

52

Reclaiming silver from silver zeolite  

Energy Technology Data Exchange (ETDEWEB)

Silver zeolite is used to capture radioiodines from air cleaning systems in some nuclear facilities at the Idaho National Engineering Laboratory. It may become radioactively contaminated and/or poisoned by hydrocarbon vapors, which diminishes its capacity for iodine. Silver zeolite contains up to 38 wt% silver. A pyrometallurgical process was developed to reclaim the silver before disposing of the unserviceable zeolite as a radioactive waste. A flux was formulated to convert the refractory aluminosilicate zeolite structure into a low-melting fluid slag, with Na{sub 2}O added as NAOH instead of Na{sub 2}CO{sub 3} to avoid severe foaming due to CO{sub 2} evolution. A propane-fired furnace was built to smelt 45 kg charges at 1300C in a carbon-bonded silicon carbide crucible. A total of 218 kg (7000 tr oz) of silver was reclaimed from 1050 kg of unserviceable zeolite. Silver recoveries of 97% were achieved, and the radioisotopes were fixed as ...

1991-10-01

53

Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams  

International Nuclear Information System (INIS)

Topographic and optical patterns have been fabricated in a-SiC films with a focused high-energy (1 MeV) H"+ and He"+ ion beam and examined with near-field techniques. The patterns have been characterized with atomic force microscopy and scanning near-field optical microscopy to reveal local topography and optical absorption changes as a result of the focused high-energy ion beam induced modification. Apart of a considerable thickness change (thinning tendency), which has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. Although the size of the fabricated optical patterns is in the micron-scale, the present development of the technique allows in principle writing optical patterns up to the nanoscale (several tens of nanometers). The observed values of the optical contrast modulation are sufficient to justify the efficiency of the method for optical data recording using high-energy focused ion beams. (author)

2011-07-01

54

Doping of silicon carbide by ion implantation  

Energy Technology Data Exchange (ETDEWEB)

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed. (orig.)

2001-07-01

55

Displacement damage cross sections for neutron-irradiated silicon carbide  

International Nuclear Information System (INIS)

Displacements per atom (DPA) is a widely used damage unit for displacement damage in nuclear materials. Calculating the DPA for SiC irradiated in a particular facility requires a knowledge of the neutron spectrum as well as specific information about displacement damage in that material. In recent years significant improvements in displacement damage information for SiC have been generated, especially the energy required to displace an atom in an irradiation event and the models used to describe electronic and nuclear stopping. Using this information, numerical solutions for the displacement functions in SiC have been determined from coupled integro-differential equations for displacements in polyatomic materials and applied in calculations of spectral-averaged displacement cross sections for SiC. This procedure has been used to generate spectrally averaged displacement cross sections for SiC in a number of reactors used for radiation damage testing of fusion materials, as well as the ...

2002-12-01

56

Displacement Damage Cross Sections for Neutron-irradiated Silicon Carbide  

Energy Technology Data Exchange (ETDEWEB)

Displacements per atom (DPA) is a widely used damage unit for displacement damage in nuclear materials. Calculating the DPA for SiC irradiated in a particular facility requires a knowledge of the neutron spectrum as well as specific information about displacement damage in that material. In recent years significant improvements in displacement damage information for SiC have been generated, especially the energy required to displace an atom in an irradiation event and the models used to describe electronic and nuclear stopping. Using this information, numerical solutions for the displacement functions in SiC have been determined from coupled integro-differential equations for displacements in polyatomic materials and applied in calculations of spectral-averaged displacement cross sections for SiC. This procedure has been used to generate spectrally averaged displacement cross sections for SiC in a number of reactors used for radiation damage testing of fusion materials, as well as the ...

2002-12-01

57

Aluminum-containing intergranular phases in hot-pressed silicon carbide  

Energy Technology Data Exchange (ETDEWEB)

Aluminum-containing intergranular phases, forming intergranular films and secondary phase particles at triple-junctions in SiC hot-pressed with aluminum, boron, and carbon additions, were studied by transmission electron microscopy. Statistical high-resolution electron microscopy study of intergranular films indicated that a large fraction of the vitreous intergranular films in the s-hot-pressed SiC crystallized during postannealing in argon above 1000 C. However, brief heating to 1900 C indeed re-melted 25 percent of the crystallized intergranular films. The structural transitions were reflected in the statistical width distributions of the amorphous grain boundary layers. At triple-junctions, Al2O3, Al2OC-SiC solid solution, and mullite phases were newly identified. These phases,together with others reported before are represented in a quaternary phase diagram for 1900 C. It is proposed that a SiC-Al2OC liquid domain is to be included in this phase diagram.

2003-01-12

60

Carbide transformations in a gamma/gamma-prime nickel alloy during prolonged aging  

Energy Technology Data Exchange (ETDEWEB)

Carbide reactions occurring in a precipitation-hardening gamma/gamma-prime Ni-Cr alloy during prolonged high-temperature aging are investigated experimentally. It is found that the decomposition of primary MC carbides, which is accompanied by the precipitation of M23C6 particles, may lead to void nucleation and growth. The effect of carbide transformations on the residual properties of the material at temperatures above the equicohesion temperature is observed at the late stages of aging only. 6 references.

1988-08-01

61

Bibliography of the technical literature of the Materials Joining Group, 1951--1991  

Energy Technology Data Exchange (ETDEWEB)

This document contains a listing of the written scientific information originating in the Materials Joining (formerly the Welding and Brazing Group), Metals and Ceramics Division, Oak Ridge National Laboratory during 1951 through June 1991. This registry of documents is as much as possible, in the order of issue date.

1991-12-01

62

Structural Stability of a Joined-Wing Sensorcraft  

Science.gov (United States)

... core section of the composite sandwich panels (Figure 5). Table 6 shows the properties that buckled as well as their initial ...

2007-06-01

63

Kaiser ANIP Participation, 1954-1962  

Science.gov (United States)

... joined together by a thin ribbon of glass that is bent into a frame shape in a prior operacion. The three glass pieces are ...

1963-03-31

64

Joining of technical ceramics  

International Nuclear Information System (INIS)

Large, complex, high purity ceramic shapes are required by a variety of emerging technologies for their electrical insulation and high temperature strength properties coupled with their refractoriness and purity. Ceramic sealant bonding, using crystalline and vitreous sealant materials, has recently shown significant potential for joining technical ceramics to form the required shapes. Materials and techniques for joining technical ceramics including alumina, magnesia, zirconia and thoria are discussed. (orig.).

65

Design and strength evaluation of structural joint made by electro-magnetic forming (EMF)  

International Nuclear Information System (INIS)

Recently, weight reduction of vehicles has been of great interest, and consequently, the use of low-density materials in the automotive industry is increasing every year. Materials should not be substituted such a way that material of component parts is simply changed because there is a problem in achieving stiffness and strength. To achieve these requirements, the automobile should be redesigned totally. Aluminum spaceframe is rapidly being adopted as a body structure for accommodating lightness, stiffness and strength requirement. In aluminum spaceframe manufacturing, it is often required to join aluminum tube. But there are few suitable methods for joining aluminum tube, so that much interest has been focused on testing suitable joining methods. Joining by electromagnetic forming(EMF) can be useful method in joining aluminum tube, which offers some advantages compared with the ...

2004-06-10

66

CORROSION RESISTANCE OF CHROMIUM CARBIDE-BASE ...  

Science.gov (United States)

... FIELD CORROSION TESTS WERE MADE DURING THE VOYAGES OF THE SCIENTIFIC-RESEARCH SHIPS ACADEMICIAN VERNADSKII AND ...

67

Electron-beam cladding of wear-resistant composite coatings on the base of titanium carbide  

International Nuclear Information System (INIS)

The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness

68

Summary of Dissimilar Metal Joining Trials Conducted by Edison Welding Institute  

International Nuclear Information System (INIS)

Under the direction of the NASA-Glenn Research Center, the Edison Welding Institute (EWI) in Columbus, OH performed a series of non-fusion joining experiments to determine the feasibility of joining refractory metals or refractory metal alloys to Ni-based superalloys. Results, as reported by EWI, can be found in the project report for EWI Project 48819GTH (Attachment A, at the end of this document), dated October 10, 2005. The three joining methods used in this investigation were inertia welding, magnetic pulse welding, and electro-spark deposition joining. Five materials were used in these experiments: Mo-47Re, T-111, Hastelloy X, Mar M-247 (coarse-grained, 0.5 mm to several millimeter average grain size), and Mar M-247 (fine-grained, approximately 50 (micro)m average grain size). Several iterative trials of each material combination with each joining method were performed to ...

69

Summary of Dissimilar Metal Joining Trials Conducted by Edison Welding Institute  

Energy Technology Data Exchange (ETDEWEB)

Under the direction of the NASA-Glenn Research Center, the Edison Welding Institute (EWI) in Columbus, OH performed a series of non-fusion joining experiments to determine the feasibility of joining refractory metals or refractory metal alloys to Ni-based superalloys. Results, as reported by EWI, can be found in the project report for EWI Project 48819GTH (Attachment A, at the end of this document), dated October 10, 2005. The three joining methods used in this investigation were inertia welding, magnetic pulse welding, and electro-spark deposition joining. Five materials were used in these experiments: Mo-47Re, T-111, Hastelloy X, Mar M-247 (coarse-grained, 0.5 mm to several millimeter average grain size), and Mar M-247 (fine-grained, approximately 50 {micro}m average grain size). Several iterative trials of each material combination with each joining method were performed to ...

2005-11-18

70

Vibration suppressor for a manual perforator  

Energy Technology Data Exchange (ETDEWEB)

A device is presented with handle containing hinges and work support arm, a flexible pin with supports and extra weights. The flexible pin is equipped with cantilevered sergments and weights. The bracket hinges on the handle are perpendicular to the axis of the flexible pin. To reduce handle vibration during drilling hard rock, the handle and brackets are joined to allow relative movement on the surface perpendicular to the hinges of the work support arm. The handle is joined to the work support arm parallel to the sides and the work support arm has holes to accomodate this. Elastic bushings are located between the lateral sides of the work support arm where it is joined to the handle.

1983-01-01

71

NASA - NASA Explorer Joins Godspeed Commemoration in Alexandria  

Science.gov (United States)

May 25, 2006 ... Former NASA Astronaut Roger Crouch will help open the commemoration of the 400th anniversary of Jamestown in Alexandria, Va., ...

72

Experimental Investigation into the Fatigue Life of Hybrid ...  

Science.gov (United States)

... asymmetric versions of two different methods of joining GRP composite sandwich panels 3with steel were obtained (see Figure 1.7), the idea being ...

2008-06-01

73

COAST and MRO to Join Forces  

Science.gov (United States)

Cambridge scientists in the late 1980's. This same team, then headed by Professor John Baldwin, built the world's first separated-element optical/infrared aperture synthesis...

2011-09-15

74

Development of SiC-AlN and SiC-SiAlON refractory composites  

International Nuclear Information System (INIS)

SiC-AlN and SiC-SiAlON refractory composites were obtained by means of nitridation of the mixtures of silicon carbide (SiC) powder with a broad granulometric distribution and powders of aluminium (Al) and aluminium-silicon (Al-Si) mixtures. The mixtures of the composition Al-25% Si, Al-50% Si and Al-75% Si were previously prepared by means of 'mechanical alloying' technique. Thermodynamic analysis was accomplished in order to evaluate the viability of SiC-SiAlON and SiC-AlN refractories production by the chosen processing method, and the results confirmed viability of such. Investigation of nitridation of Al and Al-Si powder compacts in order to obtain the AlN and #beta#-SiAlON matrix phases of the composite was accomplished by means of differential thermal analysis (DTA) and thermogravimetric analysis (TG). The results of the thermal analysis show that nitridation of the Al-25% Si, Al-50% Si and Al-75% Si resulting in ...

75

Silicon solar cell assembly  

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

1979-01-01

76

Joining technologies for the plasma facing components of ITER  

Energy Technology Data Exchange (ETDEWEB)

An extensive R and D program on the development of the joining technologies between armour (beryllium, tungsten and carbon fibre composites)/copper alloys heat sink and copper alloys/ stainless steel has been carried out by ITER Home Teams. A brief review of this R and D program is presented in this paper. Based on the results, reference technologies for use in ITER have been selected and recommended for further development. (author)

1998-07-01

77

Device for laying cut peat in a drying formation  

Energy Technology Data Exchange (ETDEWEB)

A device for laying cut peat in drying formations is proposed consisting of separate compartments, reinforced on a common frame and with mechanisms for both vertical and horizontal mixing. In order to intensify the drying process, within the scope of laying cut peat, uniform clearances and spacing in formations is applied. The mixing compartments are joined in sections with capabilities for separate mixing in each unit. The compartments are joined together by hinges and can be turned 180 degrees on the hinges horizontal to the plane.

1980-06-17

78

Development of techniques for joining of high-sensitivity solar cells. Final report; Entwicklung von Verbindungstechniken fuer hoch empfindliche Solarzellen. Abschlussbericht  

Energy Technology Data Exchange (ETDEWEB)

The report investigates a number of joining techniques, i.e. isothermal solidification, ultrasonic welding, thermocompression, and glueing. (HW) [Deutsch] In diesem Vorhaben wurden verschiedene Verbindungstechniken untersucht: Isotherme Erstarrung; Ultraschall-Schweissen; Thermokompression; Leitkleben. (HW)

1992-09-01

79

Bibliography of the technical literature of the Materials Joining Group, Metals and Ceramics Division, 1951--June 1989  

Energy Technology Data Exchange (ETDEWEB)

This document contains a listing of the written scientific information originating in the Materials Joining (formerly the Welding and Brazing Group), Metals and Ceramics Division, Oak Ridge National Laboratory during 1951 through June 1989. This registry of documents is as much as possible, in the order of issue date. A complete cross-referenced listing of the technical literature of the Metals and Ceramics Division is also available.

1989-10-01

80

Bibliography of the technical literature of the Materials Joining Group, Metals and Ceramics Division, 1951 through June 1987  

Energy Technology Data Exchange (ETDEWEB)

This document contains a listing of the written scientific information originating in the Materials Joining Group (formerly the Welding and Brazing Group), Metals and Ceramics Division, Oak Ridge National Laboratory during 1951 through June 1987. It is a registry of about 400 documents as nearly as possible in the order in which they were issued.

1987-08-01

81

Low-Cost Crystal Silicon  

International Science & Technology Center (ISTC)

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

82

The effect of precipitated carbides on the pitting corrosion of 304 stainless steel  

International Nuclear Information System (INIS)

In order to investigate the relation between the pitting corrosion and precipitated carbides, the heat treatment of specimens was carried out in two ways: Solution treatment and carbides precipitation treatment. The experiment was focused on the polarization curves of specimens immersed in HCL solution and on the microscopic analysis of the corroded specimens through a potentiodynamic method. It was found out that the intergranular and pitting corrosion occurred remarkably in 0.1N and 1N KCL solution when carbides were precipitated around the grain boundary of the 304 stain steel. The intergranular corrosion was noticed in the region of passivation and the pitting was prominent in the region of passivation break-down. The distribution of pits on the solution treated 304 stainless steel was random, while that of pits on carbides precipitated specimen was concentrated around the grain boundary in 0.1N and ...

83

Microstructure of spray converted nanostructured tungsten carbide-cobalt composite  

Energy Technology Data Exchange (ETDEWEB)

This paper reports the presence of face centered cubic cobalt precipitates inside tungsten carbide in nanocomposite of WC-Co synthesized by spray conversion processing. EDS was used to identify the presence and micro-diffraction was employed to determine the nature of the precipitates. There is entrapment of cobalt in tungsten carbide during the spray conversion process used to form WC/Co powder. During consolidation, at high temperatures, the cobalt attains enough mobility to precipitate inside WC. A vanadium containing compound was seen at the interfaces in samples which incorporated VC as a grain growth inhibitor. (orig.)

1996-05-01

84

Simulation study on retention and reflection from tungsten carbide under high fluence of helium ions  

Energy Technology Data Exchange (ETDEWEB)

We have studied, by a Monte Carlo simulation code ACAT-DIFFUSE, the fluence-dependence of the amount of retained helium atoms in tungsten carbide at room temperature under helium ion bombardment. The retention behavior may be understood qualitatively in terms of irradiation-dependent diffusion coefficient assumed and range. The emission processes from tungsten carbide under helium ion irradiation derived were compared with each other. We have discussed the retention curves for incident energy of 5 keV at incident angles of 0deg and 80deg and of 500 eV at 0deg. The energy spectra of helium atoms reflected from tungsten carbide for incident energy of 500 eV at 0deg and 80deg were compared with those from graphite and tungsten. (author)

2000-08-01

85

SECOND QUARTERLY REPORT DEVELOPMENT OF SECONDARY - NASA Technical ...  

Science.gov (United States)

cellulose casing material made by Food Products Division,. Union Carbide Corporation. tion of the anode from oxygen generated at the charging electrode. ...

86

OAK RIDGE NATIONAL LABORATORY UNION CARBIDE CORPORATION NUCLEAR ...  

Science.gov (United States)

W. Wayne Scott, Chattanooga State Technical Institute, 4501 Amnico Highway,. Chattanooga, Tennessee 3401. Robert L. Seale, University of Arizona, Tuscon, ...

87

Molten Boron Phase-Change Thermal Energy Storage ...  

Science.gov (United States)

... Advanced thermal storage systems based on very high temperature solid materials such as boron carbide or graphite have been investigated for ...

2011-06-01

88

Crystal Chemistry of Ceramic/Mineral Systems  

Science.gov (United States)

... 1. Reeber, RR, Kusy, RP, Yu, N. and Chu, WK " Formation of a Solid Lubricant in Boron Carbide by Nitrogen Ion Implantation and Laser Annealing ...

1992-12-08

89

Users' guide on socket heat fusion joining of polyethylene gas pipes. Volume 1. Topical report, September 1989-September 1990  

Energy Technology Data Exchange (ETDEWEB)

The integrity of a pipeline system is determined by its weakest links which may be the joints. Heat fusion is the most common method for joining gas distribution polyethylene (PE) piping. There are procedural, thermal, and mechanical aspects of making fusion joints. Acceptable procedural aspects, such as heater calibration and cleanliness, can be assured by rigorous training and certification of the operators. Thermal and mechanical aspects consist of specifying joining conditions such as the heater temperature, heating time, and joining pressure. In the absence of procedural errors, the strength of a fusion joint should depend on the pipe material, pipe dimensions, and the thermal and mechanical joining conditions. Socket heat fusion was studied both experimentally and analytically to determine how the strength of the joint varied with the conditions under which it was made. The standard tensile impact ...

1991-03-01

90

Technical reference on socket heat fusion joining of polyethylene gas pipes. Volume 2. Topical Report, September 1989-September 1990  

Energy Technology Data Exchange (ETDEWEB)

The integrity of a pipeline system is determined by its weakest links which may be the joints. Heat fusion is the most common method for joining gas distribution polyethylene (PE) piping. There are procedural, thermal, and mechanical aspects of making fusion joints. Acceptable procedural aspects, such as heater calibration and cleanliness, can be assured by rigorous training and certification of the operators. Thermal and mechanical aspects consist of specifying joining conditions such as the heater temperature, heating time, and joining pressure. In the absence of procedural errors, the strength of a fusion joint should depend on the pipe material, pipe dimensions, and the thermal and mechanical joining conditions. Socket heat fusion was studied both experimentally and analytically to determine how the strength of the joint varied with the conditions under which it was made. The standard tensile impact ...

1991-03-01

91

Vacuum container for use in a thermonuclear device  

International Nuclear Information System (INIS)

Purpose: To enable the use of a vacuum container under a relatively high temperature or a high level radioactive dose. Constitution: Vacuum sealing materials for use in a vacuum container are made of resins such as polyimide and polyamide. The sealing materials are joined to the both surfaces of a plate-like insulator by means of adhesives or sealants, or the sealing materials are joined between two plate-like insulators by means of adhesives or sealants. They are situated within grooves of both of flanges, which are clamped tightly by insulation bolt and nut. Since the vacuum sealing materials are joined to the insulator by means of the adhesives or sealants, the reliability of the vacuum sealing can be improved without impairing the electrical insulation. The resin of the vacuum sealing material can be used for the radiation dose up to 10"8 rad, temperature up to 250"0C or more. (Seki, K.).

1982-04-30

92

Manufacture and first wall joining for an ITER primary wall module prototype: R and D phase with small scale mock-ups  

International Nuclear Information System (INIS)

In the frame of the Primary Wall Module prototype manufacturing for ITER, a consistent R and D phase was conducted in order to identify the industrial allowable tolerances and manufacturing problems which would occur when joining pieces by HIPping process during the PW module manufacturing. The purpose of this development was to give as industrial as possible manufacturing routes for joining together large Stainless Steel or DS-Copper pieces with Stainless Steel tubes and for bonding Beryllium tiles onto a curved component surface. The study concerned surface preparations, allowable gaps and joint geometry, Beryllium tile geometry, Titanium interlayer thickness, etc. This R and D phase also allowed the development and validation of different ultrasonic inspection tools needed for plate-plate, tube-plate, edge to edge plate bonding.

2001-10-01

93

Investigation of Al{sub 2}O{sub 3}- and SSiC-ceramic under lubricated, reciprocating sliding contact and cavitation erosion  

Energy Technology Data Exchange (ETDEWEB)

Tribological performance of alumina and silicon carbide ceramics as well as of the hardened steel 100Cr6 for reference was studied during reciprocating sliding and cavitation erosion in isooctane as substitute of gasoline and in distilled water. It was the aim to characterize effects of surface finish of the specimens and the liquid media on friction, resistance to sliding wear and cavitation erosion. Sliding wear tests were run on the self-mated ceramics and ceramic/steel pairs under conditions of boundary lubrication using a laboratory tribometer with cylinder-on-plate geometry. Vibratory cavitation erosion tests were conducted according to ASTM G 32-92. High initial surface roughness of coarse ground specimens led to a distinct running-in period during sliding contact with a transition from high to low values of friction coefficient and wear intensity. Incubation time was reduced with increasing surface roughness in the cavitation tests. ...

2005-03-01

94

Uranium Mill Tailings Remedial Action Project (UMTRAP), Slick Rock, Colorado, Revision 1. Volume 1, Calculations, Final design for construction  

Energy Technology Data Exchange (ETDEWEB)

Volume one contains calculations for: embankment design--embankment material properties; Union Carbide site--bedrock contours; vicinity properties--origin of contamination; North Continent and Union Carbide sites contaminated materials--excavation quantities; and demolition debris--quantity estimate.

1995-09-01

95

Radial distribution of bonded fission gas in mixed carbide fuel pins  

International Nuclear Information System (INIS)

The fission gas xenon bonded in bubbles, in pore, and in the lattice of mixed carbide fuels is measured by electron-probe microanalysis. Radial xenon distribution and release curves are determined and are calibrated by gas chromatography of the bonded fission gas and by burnup analysis in the respective pin sections of the irradiation experiments FR2 6A and 6C, Mol 11/K 2, and DFR 330/1. The results are correlated to the microstructure of the fuel, bonding medium, temperature, and burnup. (Auth.).

1979-01-01

96

Powder metallurgical high performance materials. Proceedings. Volume 3: general topics  

International Nuclear Information System (INIS)

The proceedings of these seminars form an impressive chronicle of the continued progress in the understanding of refractory metals and cemented carbides and in their manufacture and application. The 15"t"h Plansee Seminar was convened under the general theme 'Powder Metallurgy High Performance Materials'. Under this broadened perspective the seminar will strive to look beyond the refractory metals and cemented carbides, which remain at its focus, to novel classes of materials, such as intermetallic compounds, with potential for high temperature applications. (boteke)

2001-05-01

97

Development of Bulk Nanocrystalline Cemented Tungsten Carbide for Industrial Applicaitons  

Energy Technology Data Exchange (ETDEWEB)

This report contains detailed information of the research program entitled "Development of Bulk Nanocrystalline Cemented Tungsten Carbide Materials for Industrial Applications". The report include the processes that were developed for producing nanosized WC/Co composite powders, and an ultrahigh pressure rapid hot consolidation process for sintering of nanosized powders. The mechanical properties of consolidated materials using the nanosized powders are also reported.

2009-03-10

98

Carbon effect on the structure and plasticity characteristics of titanium #beta#-alloys  

International Nuclear Information System (INIS)

In this paper a study is made of the structure and mechanical properties of the #beta# alloy system Ti-Mo-Zr-Sn (the composition of which is equivalent to the #beta# III alloy used abroad) containing different amounts of carbon. Study of the #beta#-titanium alloy containing 0.1% C revealed the presence of particles of titanium carbide. Separation of the titanium carbide promotes a reduction in impact strength, an increased tendency toward cold shortness, and poorer workability. (author).

99

Effect of VC and NbC additions on microstructure and properties of ultrafine WC-10Co cemented carbides  

British Library Electronic Table of Contents (United Kingdom)

The nanocomposite WC-Co powders were prepared through planetary ball milling method. Effects of grain growth inhibitor addition and the vacuum sintering parameters on the microstructure and properties of ultrafine WC-10Co cemented carbides were investigated using X-ray diffractometer, scanning electron microscope and mechanical property tester. The results show that VC and NbC additions can refine the WC grains, decrease the volume fraction of Co3W3C phase in ultrafine WC-10Co cemented carbides, and increase the hardness and fracture toughness of the base alloys. After sintering for 60 min at 1400 degreeC, the average grain size and hardness of ultrafine-grained WC-10Co-1VC cemented carbide are 470 nm and HRA 91.5, respectively. The fracture toughness of cemented carbide WC-10Co-1NbC alloy...

2009-01-01

100

Ceramic/polymer functionally graded material (FGM) lightweight armor system  

Energy Technology Data Exchange (ETDEWEB)

This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Functionally graded material is an enabling technology for lightweight body armor improvements. The objective was to demonstrate the ability to produce functionally graded ceramic-polymer and ceramic-metal lightweight armor materials. This objective involved two aspects. The first and key aspect was the development of graded-porosity boron-carbide ceramic microstructures. The second aspect was the development of techniques for liquid infiltration of lightweight metals and polymers into the graded-porosity ceramic. The authors were successful in synthesizing boron-carbide ceramic microstructures with graded porosity. These graded-porosity boron-carbide hot-pressed pieces were then successfully liquid-infiltrated in vacuum with molten aluminum at 1,300 C, and with liquid polymers at ...

1998-12-31

101

Whipple Procedure for Pancreatic Cancer  

Medline Plus

... be able to watch the many intricate steps Dr. Richard Alexander must accomplish to remove the cancer. ... door to informed medical care. Now let's join Dr. Richard Alexander at the University of Maryland Medical ...

102

Threats and countermeasures for network security  

Science.gov (United States)

In the late 1980's, the traditional threat of anonymous break-ins to networked computers was joined by viruses and worms, multiplicative surrogates that carry out the bidding of their authors. Technologies for authentication and secrecy, supplemented by good management practices, are the principal countermeasures. Four articles on these subjects are presented.

1991-01-01

103

The risk of establishment of aquatic invasive species: joining invasibility and propagule pressure  

UK PubMed Central (United Kingdom)

Invasive species are increasingly becoming a policy priority. This has spurred researchers and managers to try to estimate the risk of invasion. Conceptually, invasions are dependent both on the receiving...Full Text Available

2007-10-22

104

Lessons to be Learned from 25 Years of Research Investigating Psychosocial Interventions for Cancer Patients  

UK PubMed Central (United Kingdom)

Conducting rigorous psychosocial intervention research with cancer patients has many challenges including encouraging them to join studies, asking them to engage in interventions or be part...Full Text Available

2009-01-01

105

At-Risk Populations  

Science.gov (United States)

... hearing protection since you play, sit or stand near loud instruments and speakers. Here are a few ... piper's calling you to join him" Led Zeppelin (Robert Plant), "Stairway to Heaven" "My ears are ringin' ...

106

The Silicone Conundrum Part II: ?Low Outgassing? Silicones  

British Library Electronic Table of Contents (United Kingdom)

Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.

2011-01-01

107

Silicon electrochemistry related to the formation of porous silicon  

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

1988-01-01

108

Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscattering  

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

109

Properties of SiC/SiC joining s and coatings for fusion  

International Nuclear Information System (INIS)

Full text of publication follows: As SiCf/SiC composites are very low activation materials, their use as structural material for the reactor blanket and first wall components appears essential to demonstrate the potential of D-T fusion power reactor. Positive features of SiCf/SiC are their high performances at elevated operating temperature and the ability to produce a specific component. Critical issues of SiCf/SiC are the mechanical properties, radiation stability and, with regard to technological issues, their hermeticity and joining processes. Improvement of joining processes for SiC/SiC components is also needed. Recently, several blanket designs have been studied: the TAURO blanket concept in the European Union, the ARIESAT concept in the US and the DREAM concept in Japan. In those reactors, hermetic SiCf/SiC or self-sealing coatings are mandatory. The basic idea of self sealing concept is to manufacture a coating with specific ...

2007-12-10

110

Self-organization of nickel atoms in silicon  

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

2011-01-01

111

Substitution of molybdenum for tungsten in alloys of the cold working steel 60 WCrV 7. Legierungsaustausch von Wolfram durch Molybdaen beim Kaltarbeitsstahl 60 WCrV 7  

Energy Technology Data Exchange (ETDEWEB)

The effect of partial and total replacement of tungsten by molybdenum on the mechanical technical properties were investigated with the cold work steel 60 WCrV 7 (DIN 1.2550). While maintaining the total quantity of tungsten atoms and/or molybdenum atoms in the steel, no differences occur in the type of the separated carbides. After annealing in the range of the pearlite stage with annealing times of up to 150 h, the carbide phases M/sub 23/C/sub 6/ and MC are, besides alpha iron, also present. In short-time annealed states also M/sub 6/C carbides occur. These are formed during austeniting and remain in the steel as residual carbides in austeniting treatment carried out under normal conditions. Compared with tungsten alloyed steel, there is an increased formation of M/sub 6/C carbides in molybdenum alloyed steels during austeniting. By a long-time annealing treatment in the range of ...

1985-12-11

112

Silicon MOS inductor  

Energy Technology Data Exchange (ETDEWEB)

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

1981-01-01

113

Selective radiochemical separation for indium determination at ppb levels in ion-implanted semiconductor-grade silicon  

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

1982-12-23

114

Mesoporous Silicon-Based Anodes for High Capacity, High - NASA  

Science.gov (United States)

Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...

115

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector  

CERN Document Server

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

1993-01-01

116

Deep donor states of muonium in silicon and germanium (status report exp SC81)  

CERN Document Server

Deep donor states of muonium in silicon and germanium (status report exp SC81)

1979-01-01

117

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer  

CERN Document Server

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

1991-01-01

118

WC-TiC-Ni cemented carbide with enhanced properties  

British Library Electronic Table of Contents (United Kingdom)

In the paper, the effect of Ni content, WC grain size and Mo2C addition on WC-6.25wt%TiC-9.3wt%Ni cemented carbide were investigated to improve the properties of Ni-bonded cemented carbides. The results show that the decrease of Ni content will result in the decrease of transverse rupture strength and increase of hardness; with the decrease of WC particle size, hardness increases due to the refinement of WC grains, however, the transverse rupture strength decrease due to the decrease of Ni binder thickness; Mo2C proves to be an effective grain growth inhibitor. With the increase of Mo2C content, the WC grains are refined and the hardness and transverse rupture strength are improved. Generally, when the Ni content is decreased to 8.4wt%, 13.45mm WC is used and 1.2wt% Mo2C is added, a higher...

2008-01-01

119

Investigation of the structure of nano-porous carbon obtained from polycrystal carbides by means of small-angle X-ray diffraction  

International Nuclear Information System (INIS)

The structure of nano-porous carbon, obtained by means of chlorination of carbide compounds with various crystal structure (SiC, TiC, Mo_2C) is studied through the method of small-angle diffraction. The angular dependences of the scattering intensity obtained are interpreted as the result of scattering from the nanoparticles of different size. The functions of the scattering particles distribution by the m(R_g) inertia radii are determined. It is shown that in spite of the source carbide, the highest fraction of the volume in the porous carbon constitute the particles with R_g #approx# 5 A. The nanoparticles in the samples obtained from SiC, wherein the average value of the R_g"a"v < 6 A, are most uniform by size. The nanoparticles in the porous carbon, obtained from Mo_2C, are on the average by two times larger

1999-08-01

120

Influences of material inhomogeneities in 100Cr6 steel on the electrochemical metal dissolution process  

Energy Technology Data Exchange (ETDEWEB)

The electrochemical metal dissolution of 100Cr6 steel in sodium chloride solution, applying high electrolyte flow rates and high current densities, has been studied with a view to the influence of material heterogeneities such as carbide segregation lines in the steel matrix. It was shown that the presence of such segregations is responsible for the formation of troughs on the specimen surface during electrochemical dissolution. A mechanism for trough formation was proposed. A dedicated heat treatment applied to the 100Cr6 steel eliminated the carbide segregation lines and established a soft annealed, fine-grained microstructure containing globular carbides. Subsequent electrochemical dissolution did not show any development of surface irregularities as troughs. (orig.)

2001-05-01

121

Impact of Cr3C2/VC addition on the dry sliding friction and wear response of WC-Co cemented carbides  

British Library Electronic Table of Contents (United Kingdom)

Two grades of WC-10wt.%Co cemented carbide with or without addition of Cr3C2/VC grain growth inhibitor during liquid phase sintering were produced with the goal to investigate their reciprocating sliding friction and wear behaviour against WC-6wt.%Co cemented carbide under unlubricated conditions. The tribological characteristics were obtained on a Plint TE77 tribometer using distinctive normal contact loads. The generated wear tracks were analyzed by scanning electron microscopy and quantified topographically using surface scanning equipment. The post-mortem obtained wear volumes were compared to the online assessed wear. Correlations between wear volume, wear rate and coefficient of friction on the one hand and sliding distance and microstructural properties on the other hand were determ...

2009-01-01

122

Creep performance and microstructure of the iron alloy Alloy 800 HT  

International Nuclear Information System (INIS)

The examination of the high-temperature properties of the alloy Alloy 800HT has shown that both the creep performance and the microstructure of the material can be purposefully set by the initial heat treatment. At the high temperatures applied, (700-900 C), a rapid softening process sets in induced by carbide precipitation, stabilization, and coarsening. This softening process causes creep velocities strongly accelerating as a function of duration of the heat treatment prior to the creep test. The identified cause of the softening effect is a change in particle size that could be verified by SEM and TEM. It is shown that two different carbide precipitate size classes are responsible for the softening effect. While the precipitates dectable by TEM become effective primarily via interactions with dislocations, the carbide precipitates detectable only by SEM contribute to a hardening of the grain boundaries and the ...

1997-11-28

123

Structural analysis of experimental carbide fueled driver assmbly flow duct for testing in the FFTF  

International Nuclear Information System (INIS)

Mixed carbide fueled driver assembly experiments will be tested in FFTF fuel driver positions as part of the National Advanced Fuel Program. The design of the experiment flow ducts must assure conformance to FFTF functional requirements in addition to service as a test vehicle for the carbide fuel irradiations. Test goals of damage fluence burnup, and fluence to burnup ratio exceed those of the standard oxide fueled drivers. As a consequence, the 20% cold worked type 316 stainless steel material of construction will experience significant irradiation induced creep and swelling. Additionally, the flow duct design must withstand the enhanced thermal transients produced by the action of carbide fuel during reactor scrams. A major FFTF functional requirement is that adjacent flow ducts do not touch each other except at the load pads. This requires a realistic analysis of the creep and swelling deformation of the flow duct ...

124

Irradiation behavior of FBTR mixed carbide fuel at various burn-ups  

International Nuclear Information System (INIS)

The fast breeder test reactor at Kalpakkam has completed nearly 25 years of operation and is now operating at 18 MWt capacity with 46 fuel subassemblies (FSA) in the core consisting of 27 Mark-I (70% PuC + 30% UC), 13 Mark-II (55% PuC + 45% UC) and 6 MOX (44% PuO_2 + 56% UO_2) and one test PFBR FSA. Post Irradiation Examination (PIE) campaigns on FSAs at different burnup levels has provided valuable information about the irradiation behavior of the carbide fuel. This paper gives a summary of the irradiation performance of the carbide fuel evaluated through some of the investigations such as neutron radiography, x-radiography, gamma scanning, fission gas analysis and ceramography. Burnup of the carbide fuel could be enhanced from the initial design burnup limit of 50 GWd/t to 165 GWd/through systematic PIE. (author)

2010-10-01

125

Joining of zirconium alloys  

International Nuclear Information System (INIS)

Alloys of zirconium are widely used in various core components of power reactors. Nuclear assemblies require high degree of reliability and integrity for performing in radiation and corrosive atmosphere. The hostile environments of reactor core and inaccessibility for repairs make it mandatory to select only those joining techniques which produce not only superior quality but are also amenable to NDT methods and such other techniques which ensure acceptable performance. The author has worked on various types of welding of zirconium alloys for different applications. Modern techniques in electron beam (EB) welding, resistance welding, GTAW welding and laser welding have been developed for joining Zr alloys components for different types of reactors. Many of these have been standardized and successfully used in production. Several advancements have been made in the welding technologies towards achieving high productivity and increased reliability ...

2002-09-11

126

Pitting corrosion resistance of silicon-implanted stainless steels  

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

132

Fouling Study of Silicon Oxide Pores Exposed to Tap Water  

Energy Technology Data Exchange (ETDEWEB)

We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

2007-07-12

135

Boron profiles in amorphous and crystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

1989-01-01

137

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon  

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

2007-10-15

138

Neutron Transmutation Doping of Initially p-type Silicon for Production of Uniformly Doped n-type Silicon  

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

2007-10-01

139

Infrared spectroscopy analysis of MgO-doped silicon nitride  

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.

1997-12-31

140

The diffusion bonding and theoretical model including void growth mechanism in magnesium alloys  

Energy Technology Data Exchange (ETDEWEB)

There are many factors affecting diffusion bonding in order to obtain high quality joining. Therefore, in the beginning, we constructed diffusion bonding model based on void growth mechanism to predict bonding pressures and times. In addition, in order to compare theoretical values with experimental values, diffusion bonding tests were carried out by using commercial AZ31 magnesium alloy sheets with different grain sizes, 16 and 130 {mu}m. The present AZ31 alloys were successfully diffusion bonded at several conditions, and the bonding strength was more than 0.8 of each parent materials. The experimental bonding conditions in high quality joining, times and pressures, were good agreed with prediction analysis. (orig.)

2003-07-01

141

Overview of the EU small scale mock-up tests for ITER high heat flux components  

Energy Technology Data Exchange (ETDEWEB)

This task within the EU R and D for ITER was aimed at the development of basic manufacturing solutions for the high heat flux plasma facing components such as the divertor targets, the baffles and limiters. More than 50 representative small-scale mock-ups have been manufactured with beryllium, carbon and tungsten armour using various joining technologies. High heat flux testing of 20 of these mock-ups showed the carbon mono-blocks to be the most robust solution, surviving 2000 cycles at absorbed heat fluxes of up to 24 MW m{sup -2}. With flat armour tiles rapid joint failures occurred at 5-16 MW m{sup -2} depending on joining technology and armour material. These test results serve as a basis for the selection of manufacturing options and materials for the prototypes now being ordered. (orig.) 11 refs.

1998-09-01

142

Hot dip galvanised dual phase steels for automotive applications  

Energy Technology Data Exchange (ETDEWEB)

The automotive industry desires to optimize safety and lightweight construction for the production of cars and trucks. The resulting task for steel suppliers is to make steel grades available that can fulfil these requirements. Different projects have shown optimistic outlooks for optimization of safety and reduction of the weight of automobile bodies by using different high strength and ultra high strength steels. In the last group the dual phase steels play the lead. In recent years different steel grades have been developed and optimized for these applications. On one hand developing the mechanical properties as well as joining and forming of dual phase steels is one of the first steps. On the other hand different coated surfaces for various applications of dual phase steels is another step. Starting with characteristic production conditions for cold rolled hot dip galvanised dual phase steels, the mechanical properties for joining and ...

2005-07-01

143

Study of porous silicon morphologies for electron transport  

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

1993-05-17

144

Selective emitter using porous silicon for crystalline silicon solar cells  

Energy Technology Data Exchange (ETDEWEB)

This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...

2009-06-15

145

Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate  

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

2008-05-19

146

Application of neutron transmutation doping method to initially p-type silicon material  

Energy Technology Data Exchange (ETDEWEB)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...

2009-07-15

147

Application of neutron transmutation doping method to initially p-type silicon material  

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

2008-05-12

148

Annealing of silicon implanted with arsine and hydrogen ions  

Energy Technology Data Exchange (ETDEWEB)

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

2003-01-01

149

On the influence of microstructure and carbide content of steels on the electrochemical dissolution process in aqueous NaCl-electrolytes  

Energy Technology Data Exchange (ETDEWEB)

The electrochemical dissolution behaviour of armco-iron and of the steels C15, C45, C60 and 100Cr6 in concentrated sodium chloride media has been investigated. Anodic metal dissolution experiments have been carried out using the flow channel cell (parallel plate reactor), the rotating cylinder electrode (RCE) and the capillary cell. The microstructure of the steel has been varied through variation of carbon content and heat treatment (e.g. soft annealed with globular carbides or pearlitic). Current-efficiency values have been obtained by gravimetric measurements in the current-density range from i=5 to 60 A/cm{sup 2}. For the soft annealed steels, the divalent ferrite dissolution in combination with electroless cementite removal dominates. For the pearlitic steels, the occurrence of oxygen evolution electronically conductive metal carbides or trivalent ferrite dissolution, depending on the current density applied, was detected. Microstructure ...

2002-10-01

150

Welcome to the Department of Estates - University of Bath  

Wastenet

...The system recognises the name and confirms it before it starts to dial. To stop the number being dialled say 'cancel'. If ...of the conference : Press the Recall 'R' button and listen for holding dial tone. Select extension or outside number of the person to ...who is going to join the conference Press Recall 'R' to receive dial tone and select '*' and '4'. The call is ...line is faulty and should be reported to the switchboard operators by dialling '0' and giving full details of the fault, the extension ...

151

Seeking nature of God in Big Bang T1 the secrets to the beginning of the universe could lie underground in Switzerland.  

CERN Multimedia

Joanna Geary joined a Birmingham University team of scientists working on the project in Geneva. Simond Hadley took the pictures. "The most exciting thing of all" says professor Peter Watkins with a smile, "is we have absolutely no idea what will happen until we switch it on."

2008-01-01

152

RESUME-95: Results of an International Field Test of Mobile Equipment for Emergency Response  

DEFF Research Database (Denmark)

In 1995 the exercise RESUME-95 (Rapid Environmental Surveying Using Mobile Equipment) took place in Finland. Groups from 8 European countries joined the exercise. The methods used were airborne gamma-ray measurements, car-borne measurements and in situ stationary measurements. The results of the measurements are analyses aiming at disclosing similarities and differences between groups and measuring techniques.

1997-01-01

153

Phase transitions in multiplicative competitive processes  

Science.gov (United States)

We introduce a discrete multiplicative process as a generic model of competition. Players with different abilities successively join the game and compete for finite resources. Emergence of dominant players and evolutionary development occur as a phase transition. The competitive dynamics underlying this transition is understood from a formal analogy to statistical mechanics. The theory is applicable to bacterial competition, predicting novel population dynamics near criticality.

2005-07-01

154

Overview of advanced techniques for fabrication and testing of ITER multilayer plasma facing walls  

International Nuclear Information System (INIS)

The design of the ITER primary first wall incorporates a multi-layered structure consisting of a layer of beryllium bonded to a layer of copper alloy with embedded stainless steel tubes which in turn is bonded to a stainless steel structure. In this configuration, the stainless steel provides structural support, the copper alloy improved resistance to high heat loads, and the beryllium layer a low Z metal interface with plasma. Fabrication, testing and control of this multi-layered structure, and indeed the entire blanket shield module, calls for advanced methods. Several associations in the four home teams and their industrial partners have been involved in various fabrication and joining tasks now grouped under L4 blanket project. In this paper, an overview of the work done so far for joining stainless steel to stainless steel, stainless steel to copper alloy, copper alloy to copper alloy, and copper alloy to beryllium is presented. ...

1998-09-01

155

Member Login | Join / Register with EUGRIS  

Wastenet

...In 2000, the Water Framework Directive (WFD) came into force, introducing a comprehensive, river basin based water management for Europe. The aim of the Directive is ...In 2000, the Water Framework Directive (WFD) came into force, introducing a comprehensive, river basin based water management for Europe. The aim of the Directive ...

156

Calcium fluoride window mounting  

International Nuclear Information System (INIS)

A technique has been developed for joining a large calcium fluoride crystal to a stainless-steel flange by means of a silver transition ring. The process involves both vacuum brazing using a copper-silver alloy and air brazing using silver chloride. This paper describes the procedure used in fabricating a high-vacuum leak-tight calcium fluoride window assembly.

157

Wire chamber degradation at the Argonne ZGS  

International Nuclear Information System (INIS)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

1986-01-16

158

Wire chamber degradation at the Argonne ZGS  

Energy Technology Data Exchange (ETDEWEB)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

1986-01-01

159

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long  

CERN Multimedia

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

1999-01-01

160

Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures  

UK PubMed Central (United Kingdom)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

2008-01-01

161

Untitled - NASA Technical Report Server (NTRS)  

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

163

The crystalline-silicon photovoltaic R&D project at NREL and SNL  

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

1996-12-31

164

Strained silicon for quantum computing  

Energy Technology Data Exchange (ETDEWEB)

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

2002-03-07

165

Mechanical Properties of Microelectronics Thin Films: Silicon ...  

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

1989-10-01

167

Efficiency of silicon and GaAs concentrator solar cells operated inside integrating cavity receivers  

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

1991-06-01

168

CMS Silicon Strip Tracker Performance  

CERN Document Server

In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

2011-01-01

169

Abstracts by Mission Directorate - NASA  

Science.gov (United States)

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

170

ANALYSIS OF BENDING CREEP BEHAVIOR OF SILICON ...  

Science.gov (United States)

... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...

171

A Two-Step Etching Method to Fabricate Nanopores in Silicon  

CERN Document Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

2008-01-01

172

7 - NASA Technical Reports Server  

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

173

Tribological coatings for liquid metal and irradiation environments  

International Nuclear Information System (INIS)

Several metallurgical coatings have been developed that provide good tribological performances in high-temperature liquid sodium and that are relatively unaffected by neutron fluences to 6 X 10/sup 22/ n/cm/sup 2/ (E > 0.1 MeV). The coatings that have consistently provided the best tribological performance have been the nickel aluminide diffusion coatings created by the pack cementation process, chromium carbide or Tribaloy 700 trade mark (a nickel-base hardfacing alloy) applied by the detonation-gun process, and chromium carbide and other hardfacing alloy) applied by the detonation-gun process, and chromium carbide and other hardfacing materials applied by the electro-spark deposition process. The latter process is a relatively recent development for nuclear applications and is expected to find wide usage. Other coating processes, such as plasma-spray coating, sputtering, and chemical vapor deposition, were candidates ...

174

Microstructural and mechanical characterization of high energy ball milled and sintered WC-10wt%Co-xTaC nano powders  

British Library Electronic Table of Contents (United Kingdom)

Ultra fine tungsten carbide and cobalt powders were milled by high energy planetary ball mill at different ball to powder weight ratios (BPR) to produce particles of WC-10wt%Co hard metal in nanometer scale size. Microstructural characterizations by TEM show that the particle size of tungsten carbide was achieved to 32nm after milling at 15 BPR during 10h. In order to reduce the WC grain growth during the sintering process, tantalum carbide was added to the hard metal as a WC grain growth inhibitor. The nano hard metal powders were compacted at 200MPa pressure and sintered at 1370-1450degreeC temperatures in a high purity hydrogen atmosphere. The results show that the addition of 0.6wt% of TaC improves the hardness and fracture toughness from 1493 HV30 and 11.8MPam (for TaC free sample) to...

2009-01-01

175

Hardening of ion-irradiated A533B steels investigated with nanoindentation technique  

International Nuclear Information System (INIS)

Neutron irradiation embrittlement of reactor pressure vessel (RPV) steels is one of the critical issues on aging management for long term operation of nuclear power plants. Mechanistic understanding of embrittlement is a key to accurate prediction of embrittlement, especially after long term operation where the mechanical test data are sparse. Since matrix hardening is the source of the embrittlement, we focus on matrix hardening of A533B bainitic pressure vessel steel. Bainitic matrix is composed of lath structure made by ferrite and carbides, therefore it is important to understand how this structure affects hardening behavior, and to understand irradiation response of each phase. As the typical dimension of lath structure of A533B is about one micron, nanoindentation technique is suitable for the estimation of hardening of each phase. MV ion accelerators were used for controlled irradiation because MeV ion irradiation can produce defects to the depth greater ...

2008-10-13

176

Silicon effect on corrosion resistance of austenite stainless steels in strongly oxidizing media containing fluoride and phosphate admixtures  

International Nuclear Information System (INIS)

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

177

Nonformity of the electron density in amorphous silicon films  

Energy Technology Data Exchange (ETDEWEB)

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

1985-12-01

178

Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon  

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

179

Method of mitigating titanium impurities effects in p-type silicon material for solar cells  

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

1980-05-01

180

Electrochemical stability of silicon/carbon composite anode for lithium ion batteries  

International Nuclear Information System (INIS)

Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.

2007-04-20

181

Dielectric barrier discharge using corona-modified silicone rubber  

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

2008-10-01

182

New wear resistant composite material  

Energy Technology Data Exchange (ETDEWEB)

A composite material consisting of WC-Co particles in a steel matrix was fabricated by sintering mixtures of WC-Co particles and a steel powder and infiltrating the sintered pieces with a copper alloy. Its wear resistance and mechanical properties were studied as a function of the content in WC-Co particles and other characteristics of the composite material microstructure. Infiltration provided a simple means to obtain a strong cohesion between WC-Co particles and the steel matrix. An effective matrix protection against wear is obtained with relatively low additions of particles especially with a silica abrasive which is soft with respect to cemented carbide. The experimental results show that this material has good mechanical properties and wear resistance. Depending upon abrasion resistance, wear losses are reduced up to 10 times by a 30 vol% addition of cemented carbide particles.

1983-01-01

183

Duplex surface treatment of AISI 1045 steel via plasma nitriding of chromized layer  

British Library Electronic Table of Contents (United Kingdom)

In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273K for 5h. The samples were then plasma-nitrided for 5h at 803K and 823K, in a gas mixture of 75%N2+25%H2. The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8mm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layer...

2011-01-01

184

Analysis of organic acids in the pyrohydrolysis distillate of (U,Pu) mixed carbide fuel by ion chromatography  

International Nuclear Information System (INIS)

The study reports the identification of different organic acids that are formed during the pyrohydrolysis of mixed carbide of uranium and plutonium using ion chromatography (IC). The identification of organic acids present in the pyrohydrolysis distillate is required to carry out interference free analysis of Cl and F. The study describes three stage isocratic separations with NaOH eluents having concentrations 2 mM, 10 mM and 50 mM respectively in order to separate and identify both aliphatic and aromatic acids. The present investigation identified formic, acetic, propionic, butyric, tartaric and oxalic acids in the distillate, however, aromatic acids could not be identified. (author)

2011-02-22

185

The CDF intermediate silicon layers detector  

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

1999-11-01

186

Supercritical Fluid Immersion Deposition: A New Process for Selective Deposition of Metal Films on Silicon Substrates  

Energy Technology Data Exchange (ETDEWEB)

Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

2005-01-01

187

Is cold better ? - exploring the feasibility of liquid-helium-cooled optics.  

Energy Technology Data Exchange (ETDEWEB)

Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

1999-09-30

188

Application of neutron transmutation doping method to initially p-type silicon material  

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

2009-01-01

189

Depth profiling using C{sub 60} {sup +} SIMS-Deposition and topography development during bombardment of silicon  

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

2006-07-30

190

Microwave Combustion and Sintering Without Isostatic Pressure  

Energy Technology Data Exchange (ETDEWEB)

This investigation involves a study of the influence of key processing parameters on the heating of materials using microwave energy. Selective and localized heating characteristics of microwaves will be utilized in the sintering of ceramics without hydrostatic pressure. In addition, combustion synthesis will be studied for the production of powders, carbides, and nitrides by combining two or more solids or a solid and a gas to form new materials. The insight gained from the interaction of microwaves with various materials will be utilized in the mobilization and subsequent redeposition of uranium.

1998-10-20

191

Chemicals from coal: New processes  

Energy Technology Data Exchange (ETDEWEB)

This book deals specifically with the development of new processes of converting coal into useful chemical feedstocks. The major topic in this volume is the generation of syngas and its catalytic conversion to chemicals via the Fischer-Tropsch synthesis. Describes processes involved in conversion, recent catalytic developments, and the commercially important Sasol process. Also includes chapters on the carbide process and potential of future developments in the field.

1987-01-01

192

Application of continuous casting steel 100Cr6 (SAE 52100) for bearing balls  

Energy Technology Data Exchange (ETDEWEB)

The objective of the investigation was to study the feasibility of applying continuous casting steel 100Cr6 (SAE 52100) for bearing balls. It was found that two of three continuous casted steel batches have longer or at least similar rolling contact fatigue lifetimes compared to one ingot casted batch. For one of the continuous casted batches, the rolling contact fatigue lifetime was 30% less. The micro- and macrostructure and the residual stresses below the surface of the balls were comparable. There is also no obvious difference between the four batches in the metallurgical parameters like contents of oxygen, titanium and sulfur as well as in the distribution of carbides and their network. The reason for the shorter lifetime of one batch finally was found to be due not to the continuous casting process itself. There was a difference in the cross section of the different casting moulds, and by this in the speed of solidification. As a consequence an increased ...

1998-12-31

193

Theoretical nuclear physics. Final report  

Energy Technology Data Exchange (ETDEWEB)

As the three-year period FY93-FY96 ended, there were six senior investigators on the grant full-time: Bulgac, Henley, Miller, Savage, van Kolck and Wilets. This represents an increase of two members from the previous three-year period, achieved with only a two percent increase over the budget for FY90-FY93. In addition, the permanent staff of the Institute for Nuclear Theory (George Bertsch, Wick Haxton, and David Kaplan) continued to be intimately associated with our physics research efforts. Aurel Bulgac joined the Group in September, 1993 as an assistant professor, with promotion requested by the Department and College of Arts and Sciences by September, 1997. Martin Savage, who was at Carnegie-Mellon University, jointed the Physics Department in September, 1996. U. van Kolck continued as research assistant professor, and we were supporting one postdoctoral research associate, Vesteinn Thorssen, who joined us in September, 1995. Seven ...

1997-05-01

194

Molecular resemblance of an AIDS-associated lymphoma and endemic Burkitt lymphomas: Implications for their pathogenesis  

International Nuclear Information System (INIS)

Non-Hodgkin lymphoma is a common feature of AIDS. Approximately 30-40% of these tumors exhibit clinical features suggestive of endemic Burkitt lymphoma: they are aggressive malignancies that occur in association with Epstein-Barr virus infection, they arise in the setting of immunosuppression, and they carry t(8;14) translocations without detectable rearrangement of the MYC oncogene. To understand the molecular basis of these parallels, the authors analyzed a case of Epstein-Barr-positive AIDS-associated undifferentiated lymphoma. Southern blots show that the tumor exhibits immunoglobulin joining segment rearrangement but no rearrangement of the MYC oncogene. Cloning of the rearranged joining segment allowed the isolation of recombinant clones encompassing the translocation breakpoint, and sequencing of the translocation junction disclosed that the breakpoint is situated 7 base pairs from the chromosome 14 site involved in a previously ...

195

Status of R and D of the plasma facing components for the ITER divertor  

International Nuclear Information System (INIS)

The paper reports the progress made by the ITER Home Teams in the development of robust carbon and tungsten armoured plasma facing components for the ITER divertor. The activities on the development and study of armour materials, joining technologies, non-destructive evaluation techniques, high heat flux testing of manufactured components and neutron irradiation resistance studies are presented. The results of these activities confirm the feasibility of the main divertor components. Examples of the fruitful collaboration between Parties and future R and D needs are also described. (author)

2001-05-01

196

Simple method for high-temperature separation of thallium isotopes from a bulk lead target  

Energy Technology Data Exchange (ETDEWEB)

A method is proposed for the quantitative isolation of radiothallium in gas form from proton-bombarded lead of mass up to 20 g. The molten lead is kept at about 800 K in hydrofluoric-acid vapor (HF/H/sub 2/O approx. = 1) at a reduced pressure (less than or equal to4 Pa). We used 99.9% lead with the U-240 cyclotron at the Nuclear Research Institute, Academy of Sciences of the Ukrainian SSR, or the phasotron at the Join Nuclear Research Institute, which gave protons at 65 and 680 MeV correspondingly.

1988-03-01

197

Simple method for high-temperature separation of thallium isotopes from a bulk lead target  

International Nuclear Information System (INIS)

A method is proposed for the quantitative isolation of radiothallium in gas form from proton-bombarded lead of mass up to 20 g. The molten lead is kept at about 800 K in hydrofluoric-acid vapor (HF/H_2O #approx =# 1) at a reduced pressure (#<=#4 Pa). We used 99.9% lead with the U-240 cyclotron at the Nuclear Research Institute, Academy of Sciences of the Ukrainian SSR, or the phasotron at the Join Nuclear Research Institute, which gave protons at 65 and 680 MeV correspondingly.

198

Preparation of monoclonal antibodies labelled by astatine  

International Nuclear Information System (INIS)

Astatine conversed into cationic form is shown to form stable complex with diethylenetriaminpentacetic acid. Due to this complex astatine joins RN_2 type monoclonal antibodies. More favorable conditions to prepare astatine labelled antibodies are found. Chromatographical analysis and electromigration experiments have shown that astatine is strongly retained in in-vitro biomolecule. Astatine did not escape from the labelled antibodies even in case of urea effect on them. Immune activity of astatine labelled antibodies remained similar in 20 h. 28 refs., 4 figs.

199

Preliminary Investigations of Joining Technologies for Attaching Refractory Metals to Ni-Based Superalloys  

International Nuclear Information System (INIS)

In this study, a range of joining technologies has been investigated for creating attachments between refractory metal and Ni-based superalloys. Refractory materials of interest include Mo-47%Re, T-111, and Ta-10%W. The Ni-based superalloys include Hastelloy X and MarM 247. During joining with conventional processes, these materials have potential for a range of solidification and intermetallic formation-related defects. For this study, three non-conventional joining technologies were evaluated. These included inertia welding, electro-spark deposition (ESD) welding, and magnetic pulse welding (MPW). The developed inertia welding practice closely paralleled that typically used for the refractory metals alloys. Metallographic investigations showed that forging during inertia welding occurred predominantly on the refractory metal side. It was also noted that at least some degree of forging on the Ni-based superalloy side of ...

2006-01-20

200

Magnetically-impelled arc butt welding of automobile parts  

International Nuclear Information System (INIS)

Results of an investigation of the weldability of compact hollow automobile parts are reported. The use of magnetically impelled arc butt (MIAB) welding for a piston rod (OD_22_mm x 2.2_mm thickness), a shock-absorber (OD 40 mm x 2.2 mm) and a torque rod (OD 34 mm x 6 mm) has been investigated. Metallographic examination and comprehensive mechanical testing has been conducted to demonstrate the effectiveness of the method for joining of these types of automobile components

2010-01-01

201

Insulated letter drop plate  

Energy Technology Data Exchange (ETDEWEB)

An insulated letter drop plate comprises a back plate having an opening for the mail having two hinges at its upper part to attach a cover to; a frame for retaining a first insulation around its perimeter and around the opening; and suitable insulation. This back plate is also provided with an upper curved extension to cover and conceal said hinges. A cover is provided with two complementary hinges to be articulated with the first hinges on the back plate, and with a frame around the perimeter for the retention of a second insulation. A wire joins the first and second hinges, and a coil spring on the wire keeps the cover normally closed.

1988-09-06

202

INSPIRE - The Next-Generation HEP Information System  

CERN Document Server

CERN, DESY, Fermilab and SLAC have joined forces to build INSPIRE, the next-generation HEP information platform offering innovative tools for information discovery and communication. Representing a natural community-based evolution of SPIRES, INSPIRE provides fast access to the entire body of HEP literature. As a subject repository it will host fulltexts of preprints, Open Access journal articles and supplementary material like conference slides and multimedia, enabling novel text- and data mining applications. In the spirit of Web2.0 INSPIRE will also supply tools for collaboration and user-enriched content.

2010-01-01

203

Diffusion bonding on superplastic-aluminum and -magnesium alloys  

Energy Technology Data Exchange (ETDEWEB)

The superplastic characteristics and diffusion bonding behaviors were investigated in commercial 7475 aluminum alloy and AZ31 magnesium alloy sheets. In this study, the presently used materials behaved in a superplastic manner at {proportional_to} 773 K (7475Al) and {proportional_to} 523 K (AZ31). Then, by the theoretical relationship between pressure and time, these materials were successfully diffusion bonded at the superplastic temperatures. The bonding strength was more than 65 MPa. The experimental bonding conditions in high quality joining, times and pressures, were good agreed with prediction analysis. (orig.)

2004-07-01

204

Asymptotically Optimal Tree-based Group Key Management Schemes  

CERN Document Server

In key management schemes that realize secure multicast communications encrypted by group keys on a public network, tree structures are often used to update the group keys efficiently. Selcuk and Sidhu have proposed an efficient scheme which updates dynamically the tree structures based on the withdrawal probabilities of members. In this paper, it is shown that Selcuk-Sidhu scheme is asymptotically optimal for the cost of withdrawal. Furthermore, a new key management scheme, which takes account of key update costs of joining in addition to withdrawal, is proposed. It is proved that the proposed scheme is also asymptotically optimal, and it is shown by simulation that it can attain good performance for nonasymptotic cases.

2005-01-01

205

Rutherford backscattering study of the oxidation of palladium silicide on amorphous silicon substrates  

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

206

Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...

2003-12-31

207

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films  

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

208

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films  

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

1993-07-16

209

Characterization of arsenic dose loss at the Si/SiO{sub 2} interface  

Energy Technology Data Exchange (ETDEWEB)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

2000-03-01

210

Characterization of arsenic dose loss at the Si/SiO_2 interface  

International Nuclear Information System (INIS)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

2000-03-01

211

Ten-nanometer surface intrusions in room temperature silicon  

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

2002-01-01

212

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system  

Energy Technology Data Exchange (ETDEWEB)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

2005-12-15

213

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system  

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

2005-12-15

214

Selective emitters for thermophotovoltaic solar energy conversion  

Energy Technology Data Exchange (ETDEWEB)

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

1983-12-01

215

Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing  

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

2005-11-14

216

Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique  

Science.gov (United States)

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

1997-09-01

217

Hall mobility minimum of temperature dependence in polycrystalline silicon  

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

1998-01-01

218

Whispering gallery modes in silicon-nanocrystal-coated silica microspheres  

Energy Technology Data Exchange (ETDEWEB)

Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.

2007-10-15

220

Surface activity and water repellency properties of cleavable-modified silicone surfactants  

British Library Electronic Table of Contents (United Kingdom)

A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...

2006-01-01

221

Summary of NSF Workshop on Research Opportunities in Manufacturing in the Process Industries  

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

222

Studies of relativistic heavy ion collisions at the AGS (Experiment 814)  

Energy Technology Data Exchange (ETDEWEB)

This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)

1990-01-01

223

Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides  

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

225

Recent advances in silicon-germanium alloy technology and an assessment of the problems of building the modules for a radioisotope thermoelectric generator  

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

226

PolyRAD Space Radiation Shield for Commercial-Off-The  

Science.gov (United States)

Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...

227

Phonon - Drag Thermopo wer in Dilute Copper Alloys - NASA ...  

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

228

Non-linearity and hysteresis of Hall effect in magnetorheological suspensions with conducting carrier  

Energy Technology Data Exchange (ETDEWEB)

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

2003-08-01

229

Investigation of lattice strains in layered structures containing porous silicon  

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

2001-09-23

230

Integrated Optics Anisotropic Waveguides and Devices  

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

1989-04-30

231

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF_2"+ ion implantation into silicon  

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

2002-01-01

232

Effect of recoil implantation of oxygen on boron enhanced diffusion in silicon  

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

1989-04-25

233

Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems  

Energy Technology Data Exchange (ETDEWEB)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

2006-03-06

234

Determination of the hydrogen content of a-Si films by infrared spectroscopy and 25 MeV #alpha#-particle elastic scattering  

International Nuclear Information System (INIS)

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

235

Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469  

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

1997-07-01

236

Chromium-Manganese Nonmagnetic Steels  

International Science & Technology Center (ISTC)

Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures

237

Boron diffusion in amorphous silicon  

Energy Technology Data Exchange (ETDEWEB)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

2005-12-05

238

Boron diffusion in amorphous silicon  

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

2005-12-05

239

Adhesive wear of iron chromium nickel silicon manganese molybdenum niobium alloys with duplex structure. Untersuchung von Eisen-Chrom-Nickel-Silizium-Mangan-Molybdaen-Niob-Legierungen mit Duplexgefuege auf adhaesiven Verschleiss  

Energy Technology Data Exchange (ETDEWEB)

Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

1991-11-01

240

Acrobat Distiller, Job 7 - GLTRS - NASA  

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

241

8 - NASA Technical Reports Server  

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

242

Model to simulate the interaction between boron carbide and steam or air at high temperature  

Energy Technology Data Exchange (ETDEWEB)

The oxidation of boron carbide in steam or air was recently extensively studied especially in Forschungszentrum Karlsruhe, Institut fuer Materialforschung. An important data set is available for the interaction modelling. An oxygen diffusion model through the superficial liquid boron oxide formed on the boron carbide external surface associated to a superficial reaction between the liquid boron oxide and steam is proposed to simulate the experimental kinetics from BOX rig and thermogravimetric tests on the interaction between steam and boron carbide at a temperature range 800 C to 1400 C. The oxygen diffusion model will be also useful to simulate interaction between boron carbide and Ar+O2 (air simulation) atmosphere when the steam pressure becomes zero. From the analysis of BOX rig experimental kinetics of non-condensable (H2, CO2, CO and CH4) gases we propose an oxygen diffusion model through the ...

2005-03-01

243

Wear-resistance of manganese steel surface composites with cast tungsten carbide particles; Wc-W2C ryushi ni yori hyomen fukugokashita mangan ko no tai mamosei  

Energy Technology Data Exchange (ETDEWEB)

To make the surface composites with hard ceramics particles is an effective means for satisfying the request for the wear-resistance of the casting products. Covering casting is a general method for forming the composites by adding the adhesive into ceramics particles. However, due to the using of adhesive, pore and intermediate are easy to generate, and it is one of the reasons making the wear-resistance unstable. In the present study, it is attempted to form the wear-resistant composite layer by dispersing cast tungsten carbide (CTC) particles on the surface of wear-resistant 7 mass% Mn steel without using adhesives. Subsequently, the experiments on the wear-resistance of the obtained surface composites under several wear conditions are carried out. It is revealed by the results thereof that 7 mass% Mn steel surface composites with CTC particles have the wear-resistance which is even more excellent than those of white cast iron and cast chromium cast iron. It is ...

1995-04-25

244

The influence of prior ageing on creep damage development in two variants of Alloy 800  

Energy Technology Data Exchange (ETDEWEB)

The influence of high temperature thermal ageing treatments on the development of intercrystalline creep damage in two variants of Alloy 800 has been investigated. Ageing up to 3000 h and creep testing were carried out at 800 and 900 C. The high temperature behaviour of the 800HT variant is discussed with reference to the effect of heat treatments on the microstructure. The metallographic methods by which the creep damage was quantitatively determined are described. The growth rate of intercrystalline microcracks was described using a statistical model and the dependence of crack growth rate on the thermal history for both 800HT and 800H was determined. The carbide precipitation and growth processes were determined as functions of the exposure temperature and duration. The results showed the three characteristic stages, precipitation, growth and coarsening (Ostwald ripening). The largest increase in the intergranular creep damage was found in Alloy 800HT within the ...

1997-06-01

245

Spark plasma sintered tantalum carbide: Effect of pressure and nano-boron carbide addition on microstructure and mechanical properties  

British Library Electronic Table of Contents (United Kingdom)

TaC and TaC-1wt.% B4C powders were consolidated using spark plasma sintering (SPS) at 1850^oC and varying pressure of 100, 255 and 363MPa. The effect of pressure on the densification and grain size is evaluated. The role of nano-sized B4C as sintering aid and grain growth inhibitor is studied by means of XRD, SEM and high resolution TEM. Fully dense TaC samples were produced at a pressure of 255MPa and higher at 1850^oC. The increasing pressure also resulted in an increase in TaC grain size. Addition of B4C leads to an increase in the density of 100MPa sample from 89% to 97%. B4C nano-powder resists grain growth even at high pressure of 363MPa. The formation of TaB2/Carbon at TaC grain boundaries helps in pinning the grain boundary and inhibiting grain growth. The effect of B4C addition on...

2011-01-01

246

Pitting corrosion resistance of high alloy OCTG in ferric chloride solution  

International Nuclear Information System (INIS)

The effects of alloying elements and precipitated phases on the corrosion rate of high alloy OCTG in the ferric chloride solution have been evaluated. The corrosion rate of Fe-Cr-Ni-Mo alloys without precipitated phases, e.g. carbides and sigma phase, can be estimated from the composition using the following equation: log(C.R.)=-0.144xPRE-7690/(273+T)+28.6 where C.R. is the corrosion rate in g/m/sup 2//hr; PRE is Cr+3Mo+16N in percent and T is the test temperature in "0C. The activation energies of the ferric chloride test are almost the same regardless of PRE or Ni content when no detrimental phase precipitates. When carbides or the sigma phase precipitate, the corrosion rate is higher and the activation energy is lowered. This suggests that secondary phases give preferential sites for initiation of pitting corrosion.

247

Effect of microalloying and thermomechanical processing on the structure and mechanical properties of constructional steel  

Energy Technology Data Exchange (ETDEWEB)

The effect of microalloying with carbide-forming (V,Ti,Nb) and rare-earth elements and of high-temperature thermomechanical processing (HTMP) on the structure, mechanical properties and low temperature behaviour of 38CrSi steel has been investigated. It has been shown that in the case of dissolution of carbides during heating for quench hardening, the tempering resistance of the steel increases. It has also been found that - as a result of HTMP - the susceptibility of the steel irreversible temper brittleness decreases, irrespective of the steel having been microalloyed or not. The data, originating from tensile testing and impact testing (with the help of laser interferometry) in the temperature range from +20 to -196 degC, has been explained in terms of fractographic analysis. It has been shown that microalloying and HTMP favour the occurrence of ductile microvoids in the fracture. On the other hand, HTMP and rare-earth elements changes the ...

1998-10-01

248

Effect of V and W addition on the high temperature strength properties of 12%Cr-15%Mn austenitic steels. 12%Cr-15%Mn austenite ko no ondo kyodo ni oyobosu V to W tenka no eikyo  

Energy Technology Data Exchange (ETDEWEB)

Experimental discussions were given on effect of V and W addition on the high temperature strength properties of 12% Cr-15% Mn austenite steels. The test samples were added with W at 0% to 3.5% and V at 0% to 0.5% in addition to C and N, and were given aging treatment or solution treatment. This paper describes the following matters on the results of high-temperature strength measurements and structural observation: A remarkable trend was observed that M23 Cb type carbides precipitate in the aging treatment, wherein aging hardening appears prominently which is attributable to ultra-fine deposits of vanadium nitride (VN) in the V-added material; the V addition is very effective in increasing the high-temperature tensile strength and creep fracture strength as compared with single W addition, wherein the said carbides that accelerate the precipitation as a result of the V addition make a large contribution, in addition to that by ultra-fine VN ...

1992-11-01

249

Creep-fatigue and temperature synergisms in alloy 800  

Energy Technology Data Exchange (ETDEWEB)

Alloy 800 from three different commercial heats have been continuously cycled and cycled with a hold period at 922/sup 0/K. The starting microstructures of these heats reflects an inherently wide spectrum of possibilities for Alloy 800. The amounts and morphologies of the TiC and M/sub 23/C/sub 6/ carbides are different among the heats. During cycling, M/sub 23/C/sub 6/ forms intragranularly in a solution annealed heat. This precipitation contributes to the cyclic hardening. Both mill annealed heats of Alloy 800 are stable to carbide precipitation during cycling. The heat with the lower carbon content formed ..gamma..' during cycling but the volume fraction was too low to contribute to hardening. The inclusion of hold periods caused the dislocation substructure to become more diffuse in the mill annealed heats. The cyclic hardening was enhanced with the inclusion of the hold periods but this was not due to any microstructural change ...

1984-01-01

250

Advanced direct liquefaction concepts for PETC generic units. Quarterly report, October 1991--December 1991  

Science.gov (United States)

A laser pyrolysis technique has been used to produce ultrafine particles of iron carbide with diameters ranging from 2 to 20 nm. Catalysis using iron carbide was investigated in the liquefaction of Wyodak subbituminous coal; yields were determined. A study was carried out to examine the possibility of using an ultrasonic extraction technique as a rapid method of product work-up of samples following pretreatment or liquefaction experiments. A similar study had shown that extraction of coal-derived products by an ultrasonic method was rapid and gave yields and product distributions comparable to those obtained by Soxhlet extraction. On another project, three different types of supported catalysts were used to test activity for the combined water-gas shift hydrogenation of a synthetic donor solvent. The three catalysts tested were: (1) Alumina supported NiMo catalyst-Shell 324m; (2) Bulk hydrous TiO NiMo catalyst; (3) Thin film hydrous TiO ...

1991-12-31

251

A study of corrosion resistance behavior for W + C dual implanted H13 steel  

International Nuclear Information System (INIS)

The surface layer optimized in resistance of corrosion and wear has been obtained by W + C dual implantation on H13 steel. The electrochemical polarization measurements show that the peak current density I_D is increased and then saturated with increasing of voltage scanning loops. The I_D is 100 times smaller than that of H13 steel, and 2-3 times smaller than that of tungsten. Then influence of dual implantation order on corrosion resistance is also studied. The I_D for W_5C_8 implanted first with W is half of that for C_5W_5 implanted first with C. The corrosion resistance structure of the samples after corrosion is observed by SEM. The X-ray analysis indicates that the structure consists of disperse phases of WC, W_2C, FeW, Fe_2W, FeW_2C and iron carbides. It is shown from Auger analysis that the optimum complex layer for corrosion resistance consists of thin carbon film on surface, disperse phases of these metal compounds in middle and then iron ...

252

Wear resistance and electronic structure of cutting tool materials on a basis carbides of tungsten and titanium  

International Nuclear Information System (INIS)

The tool materials durability problem, in particular shock and wear resistance, has allowed to formulate a set of requirements and also to stablish the dependence between physical properties and wear. However, for understanding the nature of the process, for example determining the tribological property of the cutting tool, it is necessary to consider the atom interactions in a crystal. A theoretical study of the physical properties of cutting tool materials (W-Ti-C) with varying concentration of titanium is presented. Total and partial local electronic density for each atom in such hard solutions were calculated. (nevyjel)

2001-05-01

253

Study of dose variation in various body parts with respect to chest dose in the working environment  

International Nuclear Information System (INIS)

Mixed Uranium Plutonium Carbide ((U, Pu) C), in the form of pellets encapsulated in stainless steel tubes is the fuel for Fast Breeder Test Reactor (FBTR) at Kalpakkam. For the fabrication of fuel for enlarging the core of this reactor, high burn up plutonium is used. The external exposure in these labs was significantly higher than that with low burn up Pu fuel. Dose evaluation to the organs was carried out using experimental TLDs during various operations of FBTR fuel fabrication to study the dose distribution pattern. (author)

2011-02-22

254

Mechanical properties of titanium-niobium carbon nitride  

Energy Technology Data Exchange (ETDEWEB)

A study was made of the variation in strength characteristics of group IV transition metal carbon nitrides alloyed with carbides or group V metal nitrides. A complex solid solution of titanium-niobium carbonitride was preliminarily synthesized to a homogeneous equilibrium state and then crushed. The calculated quantity of binder metal was added as elemental powders, the mixture was vibration ball milled in ethanol and the plasticized charge was used to press experimental specimens for mechanical testing. The studies showed that the high-temperature strength properties of the new cermet are superior to standard type KNT. The material is thus promising for use in the manufacture of tools. 8 references, 3 figures.

1984-07-01

255

Theoretical transition energies, lifetimes and fluorescence yields of multiply ionized silicon  

Energy Technology Data Exchange (ETDEWEB)

Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.

1982-01-01

256

The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

1994-06-01

257

Study of transient enhanced dopant diffusion in silicon and proposed limiting methods  

International Nuclear Information System (INIS)

The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

2001-09-01

258

Soft X-ray spectra of amorphous hydrogenated silicon  

Energy Technology Data Exchange (ETDEWEB)

The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

1985-06-01

259

Silicone-rubber washers soothe vibrating transmission lines  

Science.gov (United States)

Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.

1965-01-01

260

Silicon nanopowder as active material for hybrid electrodes of lithium-ion batteries  

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

2011-01-01

261

On the theory of transient enhanced diffusion in boron-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

1991-01-01

262

On the theory of transient enhanced diffusion in boron-implanted silicon  

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

263

Hardening process relating to the irradiation of active electronic components and large hardened components  

International Nuclear Information System (INIS)

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

1988-12-09

264

Developments and tests of double-sided silicon strip detectors and read-out electronics for the Internal Tracking System of ALICE at LHC  

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

1999-01-01

265

Determination of the conversion factor for infrared measurements of carbon in silicon  

Energy Technology Data Exchange (ETDEWEB)

The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.

1986-10-01

266

Boron uphill diffusion during ultrashallow junction formation  

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

2003-05-26

267

Application of Pd silicide in the process of silicon detectors  

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

1990-04-01

268

Anomalous sputter yields due to cascade mixing  

Energy Technology Data Exchange (ETDEWEB)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

1980-05-01

269

Anomalous sputter yields due to cascade mixing  

International Nuclear Information System (INIS)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

270

17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings  

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

2007-08-01

271

Time-temperature-precipitation and time-temperature-sensitization behavior of highly corrosion resistant nickel-chromium-molybdenum alloys. Das Zeit-Temperatur-Ausscheidungs- und das Zeit-Temperatur-Sensibilisierungs-Verhalten von hochkorrosionsbestaendigen Nickel-Chrom-Molybdaen-Legierungen  

Energy Technology Data Exchange (ETDEWEB)

The time-temperature-precipitation diagrams and the resulting time-temperature-sensitization diagrams have been established and are presented for today's current nickel-chromium-molybdenum alloys C-4, C-276, 22 and the recently developed alloy 59. Compared to those materials alloy 625 behaves differently due to its high niobium content. In addition, also the precipitation and sensitization of alloy G-3 has been established. Under the materials considered alloy C-276 has the strongest tendency to precipitate the intermetallics Mu and P together with the carbide M{sub 6}C at intermediate temperatures, followed by the alloys 22 and 59. The tendency to sensitization in the sense of the 50{mu}m (2 mils) intercrystalline penetration criterion when exposed to the ASTM G-28, method A test solution is greatest with alloy C-276, and decreases over the alloys 22, 59 and G-3 to alloy 625. Sensitization is caused by precipitation of the intermetallics {mu} and P and ...

1992-05-01

272

Development of a stable cobalt-ruthenium Fisher-Tropsch catalyst. Final report  

Energy Technology Data Exchange (ETDEWEB)

The reverse micelle catalyst preparation method has been used to prepare catalysts on four supports: magnesium oxide, carbon, alumina- titania and steamed Y zeolite. These catalysts were not as active as a reference catalyst prepared during previous contracts to Union Carbide Corp. This catalyst was supported on steamed Y zerolite support and was impregnated by a pore-filling method using a nonaqueous solvent. Additional catalysts were prepared via pore- filling impregnation of steamed Y zeolites. These catalysts had levels of cobalt two to three and a half times as high as the original Union Carbide catalyst. On a catalyst volume basis they were much more active than the previous catalyst; on an atom by atom basis the cobalt was about of the same activity, i.e., the high cobalt catalysts` cobalt atoms were not extensively covered over and deactivated by other cobalt atoms. The new, high activity, Y zerolite catalysts were not as stable as the ...

1995-02-01

273

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides  

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...

2004-06-01

274

Radiation-induced segregation in light-ion bombarded Ni-8% Si  

Energy Technology Data Exchange (ETDEWEB)

Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...

1986-01-01

275

Enhanced biosorptive removal of cadmium from aqueous solutions by silicon dioxide nano-powder, heat inactivated and immobilized Aspergillus ustus  

British Library Electronic Table of Contents (United Kingdom)

Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...

2011-01-01

276

Electrochemical characterisation of patterned carbon nanotube electrodes on silane modified silicon  

Energy Technology Data Exchange (ETDEWEB)

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...

2008-07-20

277

Construction and Calibration of the Laser Alignment System for the CMS Tracker  

CERN Document Server

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...

2006-01-01

278

A plasma process for the synthesis of cubic-shaped silicon nanocrystals for nanoelectronic devices  

International Nuclear Information System (INIS)

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...

2007-04-21

279

Upper limb dysfunction following selective neck dissection: A retrospective questionnaire study  

British Library Electronic Table of Contents (United Kingdom)

Background. To determine total upper limb function following selective neck dissection over a mean follow-up of 1.6 years. Methods. A retrospective questionnaire study in a tertiary head and neck surgical unit. One hundred forty-eight patients who underwent selective neck dissection for head and neck cancer from January 2000 to December 2005 were invited to participate. The main outcome measure was ipsilateral upper limb dysfunction as measured by the Disability of Arm, Shoulder and Hand (DASH) questionnaire. Results. Sixty-five patients responded to the invitation to join the study from 148 invited. Despite accessory nerve conserving surgery for all the selective neck dissections studied, 23% reported no upper limb dysfunction, 54% reported mild upper limb dysfunction, 15% reported modera...

2009-01-01

280

Tunneling magnetoresistance from a symmetry filtering effect  

International Nuclear Information System (INIS)

This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the ...

2008-04-01

281

The Triton project -- A North Sea subsea challenge  

Energy Technology Data Exchange (ETDEWEB)

Three companies--Amerada Hess Ltd., Shell Expro (a 50/50 joint partnership between Shell and Esso) and Texaco--have joined forces in a project that will combine their expertise. The Triton project will allow three fields (Bittern, Guillemot West and Gullemot Northwest) to be developed simultaneously using subsea technology, with the wellheads on the seafloor and 68 miles (110 km) of flowlines taking oil and gas produced from the fields to a central floating production storage and offloading (FPSO) vessel. These fields are located in the central area of the North Sea, about 118 miles from Aberdeen in 295 ft of water. The paper discusses the development of the fields, subsea technology, technical challenges, laying the pipeline, and project completion.

1998-11-01

282

TIG of Reduced Activation Ferrite/Martensitic Steel for the Korean ITER-TBM  

International Nuclear Information System (INIS)

Test Blanket Modules (TBM) will be tested in ITER to verify the capability of tritium breeding and recovery and the extraction of thermal energy suitable for the production of electricity. A Helium Cooled Solid Breeder (HCSB) TBM has been developed in Korea to accomplish these goals. Reduced Activation Ferritic/Martensitic (RAFM) steel has been chosen as the primary candidate structural material for Korean TBM. Due to the complexity of the First wall (FW) and Side wall (SW), it is necessary to develop various joining technologies, such as Hot Isostatic Pressing (HIP), Electron Beam Welding (EBW) and Tungsten Inert Gas (TIG) welding, for the successful fabrication of TBM. In this study, the mechanical properties of TIG welded RAFM steel were investigated. Various mechanical tests of TIG-welded RAFM steel were performed to obtain the optimized TIG welding process for RAFM steel

2010-10-01

283

Prevalence and incidence of depressive and anxious symptoms in couples undergoing assisted reproductive treatment in an Italian infertility department  

British Library Electronic Table of Contents (United Kingdom)

Objective: We have conducted a longitudinal observational study in order to evaluate the prevalence and the incidence of depressive and anxious symptoms in women and men seeking infertility treatment and to analyze associated factors or risk factors for these kinds of disorders. Study design: A total of 1000 consecutive couples that visited our center for the first time were asked to join this study. Depressive and anxious symptoms were assessed with self-rating Zung Depression Scale (ZDS) and Zung Anxiety Scale (ZAS) questionnaires. A second assessment was planned at the time of b HCG dosage (or at the moment of cycle suspension). A standard questionnaire was used to investigate socio-demographic information and the psychological aspects of couples undergoing in vitro fertilization (IVF) ...

2011-01-01

284

Preparation of reactor tube by welding a porous membrane with a non-porous ceramic tube  

Energy Technology Data Exchange (ETDEWEB)

In the course of designing a catalytic porous membrane reactor for experimental studies, both inside and outside of the non-reaction zones as well as the two ends of the membrane need to be completely sealed to ensure that there is no flow across the membrane in the non-reaction zone. Experiments show that up to 50% of the total flow across the membrane may be contributed by the axial flow along the wall of the non-reaction zones if only one side of the membrane is sealed. Another problem that cannot be solved by sealing is the capillary flow of the catalyst along the tube wall into the non-reaction zones when the catalyst is doped on the membrane. One of the best ways to avoid this axial flow of catalyst would be to use non-porous tubes in the non-reaction zones and join them with the porous membrane tube. In doing so, the cost of the membrane reactor could be reduced simply because shorter membrane tube is needed.

1994-12-31

285

Natural gas utilization as fuel in urban rail transport; Utilizacao do gas natural como combustivel no transporte ferroviario urbano  

Energy Technology Data Exchange (ETDEWEB)

The majority of Brazilian big cities served by conventional railroad systems with routes starting in the center of the URBIS, destinate them the long distances transport of passengers and cargo. Actually, these systems are being transformed to become commuter trains which join a great capacity of transportation to a much lower costs of implantation than subway ones. The most important characteristic of this train, when talking about energy consumption, is the possibility of using different kinds of explosion engines from three cycles: Diesel, mixed (Diesel + Natural Gas), and Otto moved by natural gas, besides the traditional electric traction. The use of natural gas in Otto cycle engines shows itself competitive from the point of view of investments, operational costs and environmental preservation. (author). 10 refs., 1 fig

1995-12-31

286

Japanese will join West Germany in funding coal-liquefaction project  

Science.gov (United States)

The funding for a coal-liquefaction demonstration plant near Morgantown, W.Va., appears more certain since Japan has committed $175 million toward the project. West Germany has already signed a memorandum of understanding to contribute 25% of the expected $700 million cost. West Virginia Governor J. Rockefeller has said that he feels sure the Carter Administration will approve the project since half the money is assured. The solvent-refined-coal (SRC) demonstration program began in July 1978 with the award of two separate multiphased contracts for development of a solid process, SRC-I, and a liquid process, SRC-II. The US Department of Energy is expected to choose one of the projects for detailed design and construction by the end of fiscal 1979.

1979-05-16

287

Interfacial ultrafine-grained structures on aluminum alloy 6061 joint and copper alloy 110 joint fabricated by magnetic pulse welding  

British Library Electronic Table of Contents (United Kingdom)

Magnetic pulse welding is a solid state impact welding process, similar to explosive welding, which produces metallurgical bond by oblique high-speed impact between two metal bodies. This violent impact removes the metal surface oxide layers and then joins the two atomic level clean metal surfaces together by the incidental compression pressure. The impact velocity is at 200?400?m/s and the being welded metal surface undergoes severe plastic deformation with strain rate in the order of 106?107?s?1. The ultrafine-grained structure was observed on the welded interface. This article studied two types of similar material lap joint interfaces and the base metals were aluminum alloy 6061 and copper alloy 110. Nano-indentation testing shows that the welded interfaces have significantly greater ha...

2010-01-01

288

Electromagnetic forming - a potentially viable technique for accelerator technology  

International Nuclear Information System (INIS)

Modern day accelerator development encompasses a myriad technologies required for their diverse needs. Whereas RF, high voltage, vacuum, cryogenics etc., technologies meet their functional requirements, high finish lapping processes, ceramic-metal joining, oven brazing, spark erosion or wire cutting etc., are a must to meet their fabrication requirements. Electromagnetic (EM) forming technique falls in the latter category and is developed as a special technology. It is currently catering to the development as a nuclear reactor technology, but has the potential to meet accelerator requirements too. This paper highlights the general principle of its working, simple design guidelines, advantages, and suggests some specific areas where this could benefit accelerator technologies

2003-02-03

289

Comparative thermal cyclic test of different beryllium grades previously subjected to simulated disruption loads  

Energy Technology Data Exchange (ETDEWEB)

Considering beryllium as plasma facing armour this paper presents recent results obtained in Russia. A special process of joining beryllium to a Cu-alloy material structure is described and recent results of thermal cycling tests of such joints are presented. Summarizing the results, the authors show that a Cu-alloy heat sink structure armoured with beryllium can survive high heat fluxes ({>=}10 MW/m{sup 2}) during 1000 heating/cooling cycles without serious damage to the armour material and its joint. The principal feasibility of thermal cycling of beryllium grades and their joints directly in the core of a nuclear reactor is demonstrated and the main results of this test are presented. The paper also describes the thermal cycling of different beryllium grades having cracks initiated by previously applied high heat loads simulating plasma disruptions. (orig.)

1999-11-01

290

Benchmarking Declarative Approximate Selection Predicates  

CERN Document Server

Declarative data quality has been an active research topic. The fundamental principle behind a declarative approach to data quality is the use of declarative statements to realize data quality primitives on top of any relational data source. A primary advantage of such an approach is the ease of use and integration with existing applications. Several similarity predicates have been proposed in the past for common quality primitives (approximate selections, joins, etc.) and have been fully expressed using declarative SQL statements. In this thesis, new similarity predicates are proposed along with their declarative realization, based on notions of probabilistic information retrieval. Then, full declarative specifications of previously proposed similarity predicates in the literature are presented, grouped into classes according to their primary characteristics. Finally, a thorough performance and accuracy study comparing a large number of similarity predicates for ...

2009-01-01

291

Advances in feedstock recycling offer help with plastic waste  

Energy Technology Data Exchange (ETDEWEB)

An idea whose time has come takes center stage in London this week when BP Chemicals announces details of a consortium of chemical companies joining it in a new recycling project. In the project, which BP has been working on since 1989, waste plastic will be depolymerized to chemical feedstocks, via technology variously called feedstock or chemical recycling, polymer cracking, or tertiary recycling. BP's effort is one of the first to emerge from the research and pilot-plant stages that are committed to actual feedstock recycling of mixed polyolefins and other plastics. But it is only one of the many industry efforts under way to cope with the job of dealing with postconsumer plastics.

1993-10-04

292

A connecting coupling  

Energy Technology Data Exchange (ETDEWEB)

The flexible, insulated, single strand cables are electrically connected with a cylindrical polar tip (PN) by means of cylindrical and conical shafts for the polar tips, which enter the faces of the divided, multiwire strand, clamped by tension half couplings. The flat ends of the polar tips being joined are positioned in two concentric mandrel bushings, an internal fixed one and an external, axially movable bushing (PV). The internal bushing is rigidly attached to the end of the left polar tip and equipped with three or four rounded, radial openings, whose diameter is determined by the external diameter of the locking device hinges (ShF) of the connecting couplings. The right polar tip is equipped with an annular channel of trapezoidal section into which the locking device hinges enter. The external movable bushing on the right side has a conical turning and on the left, a cylindrical into which the cylindrical spring which holds the movable bushing in the extreme ...

1981-06-05

293

The rate-limiting mechanism of transition metal gettering in multicrystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...

1997-04-01

294

Silicon purification melting for photovoltaic applications  

Energy Technology Data Exchange (ETDEWEB)

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

2000-04-01

295

Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (XVIII), December 1, 1979-February 29, 1980  

Energy Technology Data Exchange (ETDEWEB)

Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...

1980-03-01

296

A kinetic and mechanistic study of the oxidation of silicon- and thin metal silicide layers  

International Nuclear Information System (INIS)

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...

297

Water-repellency and antibacterial activities of plasma-treated cleavable silicone surfactants on nylon fabrics  

British Library Electronic Table of Contents (United Kingdom)

In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...

2006-01-01

298

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

1985-08-01

299

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon  

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

300

The fraction of substitutional boron in silicon during ion implantation and thermal annealing  

Energy Technology Data Exchange (ETDEWEB)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

1998-05-01

301

The fraction of substitutional boron in silicon during ion implantation and thermal annealing  

International Nuclear Information System (INIS)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

1998-05-01

302

The formation of aluminum phosphide in aluminum melt treated with an Al-Fe-P inoculant addition  

Energy Technology Data Exchange (ETDEWEB)

The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)

2001-04-01

303

Solar thermophotovoltaic (STPV) system with thermal energy storage  

Energy Technology Data Exchange (ETDEWEB)

A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}

1996-02-01

304

Schottky barrier modulation on silicon nanowires  

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

2007-03-26

305

SSRM characterisation of FIB induced damage in silicon  

International Nuclear Information System (INIS)

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.

2008-03-01

306

Response characteristics of base-isolated structure with silicone rubber bearings  

International Nuclear Information System (INIS)

More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992

1993-08-15

307

Properties of low residual stress silicon oxynitrides used as a sacrificial layer  

Energy Technology Data Exchange (ETDEWEB)

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

2000-01-04

308

Prediction of transient-enhanced diffusion during rapid thermal annealing of ion-implanted silicon  

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

1985-03-01

309

Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon  

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

1999-01-01

310

Photoluminescence in large fluence radiation irradiated space silicon solar cells  

Energy Technology Data Exchange (ETDEWEB)

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

1997-03-01

311

Nano silicon for lithium-ion batteries  

Energy Technology Data Exchange (ETDEWEB)

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)

2006-11-12

312

Metallization of large silicon wafers. Quarterly technical report No. 1, August 26--December 31, 1977. [45 references  

Science.gov (United States)

A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).

1977-01-01

313

Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films  

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

1998-09-01

314

Influence of silicon, copper and cobalt on corrosion cracking and pitting corrosion in 03Kh18N30 steel  

International Nuclear Information System (INIS)

The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.

315

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator  

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

316

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator  

International Nuclear Information System (INIS)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

317

Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report  

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

318

A Versatile Evaporative Cooling System Designed for Use in an Elementary Particle Detector  

British Library Electronic Table of Contents (United Kingdom)

An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...

2007-01-01

319

Diverter/bop system and method for a bottom supported offshore drilling rig  

Energy Technology Data Exchange (ETDEWEB)

A system is described adapted for alternative use as a diverter or a blowout preventer for a bottom supported drilling rig and adapted for connection to a permanent housing attached to rig structural members beneath a drilling rig rotary table, the permanent housing having an outlet connectable to a rig fluid system flow line. The system consists of: a fluid flow controller having a controller housing with a lower cylindrical opening and an upper cylindrical opening and a vertical path therebetween and a first outlet passage and a second outlet passage provided in its wall, a packing element disposed within the controller housing, and annular piston means adapted for moving from a first position to a second position, whereby in the first position the piston means wall prevents interior fluid from communicating with the outlet passages in the controller housing wall and in the second position the piston means wall allows fluid communication of interior fluid with the outlet passages and ...

1986-07-01

320

Development of a numerical methodology to simulate the roller expansion forming process  

International Nuclear Information System (INIS)

A distinguishing design feature of CANDU nuclear reactors is the use of horizontal fuel channels housed in a horizontal vessel called a calandria, which is made of stainless steel 304L. Each channel consists of a Zr-2.5%Nb alloy pressure tube and an externally concentric Zr-2 calandria tube. The calandria tubes are joined to the end plates (tubesheets) of the calandria vessel by joints formed by roller expansion. The bores in the tubesheets are grooved. Roller expanded joints provide a cost effective means of joining dissimilar materials, require minimal space and no maintenance. The quality of these roller expanded joints is important from a sealing, strength and stress corrosion point of view. The roller expansion process consists of expanding the calandria tubes to deform them plastically against the bores and into the grooves of the tubesheets. Therefore, understanding the effect of the number, geometry and the pitch of the grooves on the ...

2006-04-03

321

Wafer and Solar Cell Characterization by GT-PVSCAN6000  

Science.gov (United States)

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

2002-08-01

322

Transient enhanced diffusion of boron in silicon: The interstitial flux  

Energy Technology Data Exchange (ETDEWEB)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...

1997-11-01

323

Transient enhanced diffusion of boron in silicon: The interstitial flux  

International Nuclear Information System (INIS)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...

1996-12-02

324

Thermal stability and acid resistance of aluminosilicophosphate zeolites  

Energy Technology Data Exchange (ETDEWEB)

By isomorphous replacement of silicon by phosphorus the authors have synthesized crystalline aluminosilicophosphates with structures of the zeolites type A and faujasite. They determine the adsorption capacity of specimens treated at 575-1275/sup 0/K. They show that the thermal stability and acid resistance of aluminosilicophosphates depend on the quantity of phosphorus in their structure.

1987-04-01

325

Silicon front-end technology -- Materials processing and modeling. Materials Research Society symposium proceedings Volume 532  

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...

1998-07-01

326

Observed energy dependence of Fano factor in silicon at hard X-ray energies  

Energy Technology Data Exchange (ETDEWEB)

An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.

1999-03-01

327

NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference  

Energy Technology Data Exchange (ETDEWEB)

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

1993-05-01

328

Method of restoring degraded solar cells  

Energy Technology Data Exchange (ETDEWEB)

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

1983-01-01

329

Metallization of large silicon wafers. Final report  

Science.gov (United States)

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...

330

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials  

Energy Technology Data Exchange (ETDEWEB)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} ...

2004-11-15

331

Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials  

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...

2004-11-01

332

J4P Evaluation of Externally Heated Pulsed MPD Thruster Cathodes  

Science.gov (United States)

twenty 350 V, 2.5 mF aluminum electrolytic capacitors with 10.8 mH inductors made of multi-strand wire. The PFN discharge was controlled using an silicon ...

333

Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors  

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...

1992-08-28

334

Investigations into the nature of a silicoaluminophosphate with the faujasite structure  

Energy Technology Data Exchange (ETDEWEB)

The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.

1987-04-29

335

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF{sub 2}{sup +} ion implantation into silicon  

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

2002-01-01

336

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate  

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

2004-06-30

337

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate  

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

2004-06-30

338

INVESTIGATION OF GLASS-METAL COMPOSITE ...  

Science.gov (United States)

... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...

1957-09-01

339

Evolution of surface roughness in silicon X-ray mirrors exposed to a low-energy ion beam  

International Nuclear Information System (INIS)

The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...

2010-05-01

340

Enhancing stability of austenitic stainless steels to intergranular corrosion in strongly-oxidising media by regulating composition of impurities  

International Nuclear Information System (INIS)

Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At ...

1984-01-01

341

Displaced capillary dies  

Energy Technology Data Exchange (ETDEWEB)

An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.

1982-01-01

342

Chromized/siliconized diffusion coatings for iron-base alloy by pack cementation  

Energy Technology Data Exchange (ETDEWEB)

This paper reports that the co-deposition of chromium and silicon into a 2.25Cr-1.0Mo-0.15C steel, alloy 800, and type 304 stainless steel has been achieved using the pack cementation process. The ferritic coating produced on the 2.25 Cr-1.0Mo steel was approximately 225 {mu}m (9 mils) thick, whereas the inward diffusion of chromium and silicon produced a two-phase structure of ferrite and austenite for type 304. Chromium and silicon were incorporated into the austenitic solid solution upon diffusion into alloy 800. All coatings had approximately 25 to 35 wt% Cr and 2 to 3% Si at the surface. Cyclic oxidation testing in air of the coated 2.25Cr-1.0Mo steel (T = 700{degrees} C) and type 304 (T = 1035{degrees} C) showed a dramatic decrease in the oxidation kinetics compared to the original uncoated alloys. The cyclic oxidation of alloy 800 was also improved.

1991-09-01

343

Changes in colonic motility induced by sennosides in dogs: evidence of a prostaglandin mediation.  

UK PubMed Central (United Kingdom)

The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available

1988-09-01

344

An analytic representation of the radial distribution of dose from energetic heavy ions in water, Si, LiF, and NaI  

International Nuclear Information System (INIS)

An earlier representation of the radial distribution of dose about the path of a heavy ion in liquid water is modified and extended to include silicon, lithium fluoride, and sodium iodide. 6 refs., 5 figs., 1 tab.

1989-09-01

345

2005 NASA Executive Capability Roadmap Report  

Science.gov (United States)

ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...

346

.N& 21762 - NASA Technical Report Server (NTRS)  

Science.gov (United States)

of the supplier of pulled p-type silicon material. of G-6 and E 8 centers irradiated in the 1 t o 3 MeV range. tions w i l l be performed using the General ...

347

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

1998-09-18

348

Simple integral screenprinting process for selective emitter polycrystalline silicon solar cells  

Energy Technology Data Exchange (ETDEWEB)

This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.

1991-09-23

349

Self-interstitial supersaturation during Ostwald ripening of end-of-range defects in ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

1996-12-01

350

Reactive sticking coefficients for silane and disilane on polycrystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.

1988-04-15

351

Polysilicon TFT fabrication on plastic substrates  

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

1997-08-06

352

On the influence of silicon oxide nanoparticles on the optical and surface properties of hybrid (inorganic-organic) barrier materials  

Energy Technology Data Exchange (ETDEWEB)

One of the major scientific and technological challenges for the production of flexible organic electronic devices is the device protection against atmospheric molecule permeation, which causes corrosion reducing its operation and lifetime. In this work, Spectroscopic Ellipsometry has been implemented to investigate the influence of silicon dioxide nanoparticles on the optical properties of hybrid polymers. The spectra analysis revealed valuable information about the electronic and vibrational response as well as the cross-linking mechanisms of these materials. The correlation of the optical properties with the synthesis parameters and the barrier response will contribute towards their optimization in order to be used as high barrier coatings for flexible organic electronics applications.

2009-10-01

353

Observation of a surface peak in low energy implant depth profiles in silicon  

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

1984-03-01

354

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants  

Energy Technology Data Exchange (ETDEWEB)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1997-11-01

355

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants  

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1996-12-02

356

Measurement of liquid xenon scintillation from heavy ions using a silicon photodiode  

Energy Technology Data Exchange (ETDEWEB)

Scintillation light in liquid xenon excited by 100 MeV/n Al ions was detected with a home-made silicon photodiode. The diameter of the photodiode was 2 inch. The effective quantum efficiency was observed to be 22% for the wavelength of liquid xenon scintillation light (170 nm), while the effective quantum efficiency for 5.486 MeV alpha-particle excitation was 44%. An energy resolution of 0.5% rms was achieved for the energy deposition of 2.5 GeV in liquid xenon using a fast preamplifier ({approx equal} 20 ns). (orig.).

1991-11-15

357

Laser-assisted solar cell metallization processing. Quarterly report No. 6, March 1-June 30, 1985  

Energy Technology Data Exchange (ETDEWEB)

A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.

1985-07-25

358

Development of low cost contacts to silicon solar cells  

Science.gov (United States)

The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.

1980-01-01

359

Combining laser chemical processing and aerosol jet printing: a laboratory scale feasibility study  

British Library Electronic Table of Contents (United Kingdom)

Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.

2011-01-01

360

Interrelation between grain boundary characteristics and intergranular stress corrosion cracking of thermally treated alloy 690 and shot peened alloy 800 in high temperature acidic and alkaline solution  

Energy Technology Data Exchange (ETDEWEB)

To clarify the acidic and alkaline Intergranular Stress Corrosion Cracking (IGSCC) mechanism of thermally treated alloy 690 (alloy 690 TT) and shot peened alloy 800 (alloy 800 SP), C-ring tests were conducted in deaerated HCl solutions and in deaerated NaOH solutions at 350degC, compared with the acidic and the alkaline IGSCC susceptibilities of mill-annealed alloy 600 (alloy 600 MA), full-sensitized one (alloy 600 FS) and thermally treated one (alloy 600 TT). Grain boundary characteristics, such as chromium depleted zone and chromium carbide precipitation, were examined using modified Huey test and Transmission Electron Microscopy. Potential-pH diagram for Ni, Cr, Fe-H{sub 2}O system at 350degC was constructed and the solubilities of NiO, Cr{sub 2}O{sub 3} and Fe{sub 3}O{sub 4} were also calculated to evaluate the stability of oxide films which were formed on the surfaces of alloy 690, 800 and 600. Under the acidic condition, the IGSCC susceptibility of alloy 800 ...

2001-05-01

361

Interrelation between grain boundary characteristics and intergranular stress corrosion cracking of thermally treated alloy 690 and shot peened alloy 800 in high temperature acidic and alkaline solution  

International Nuclear Information System (INIS)

To clarify the acidic and alkaline Intergranular Stress Corrosion Cracking (IGSCC) mechanism of thermally treated alloy 690 (alloy 690 TT) and shot peened alloy 800 (alloy 800 SP), C-ring tests were conducted in deaerated HCl solutions and in deaerated NaOH solutions at 350degC, compared with the acidic and the alkaline IGSCC susceptibilities of mill-annealed alloy 600 (alloy 600 MA), full-sensitized one (alloy 600 FS) and thermally treated one (alloy 600 TT). Grain boundary characteristics, such as chromium depleted zone and chromium carbide precipitation, were examined using modified Huey test and Transmission Electron Microscopy. Potential-pH diagram for Ni, Cr, Fe-H_2O system at 350degC was constructed and the solubilities of NiO, Cr_2O_3 and Fe_3O_4 were also calculated to evaluate the stability of oxide films which were formed on the surfaces of alloy 690, 800 and 600. Under the acidic condition, the IGSCC susceptibility of alloy 800 SP was high. The ...

2001-05-01

362

SIMS analysis of silicon on insulator structures formed by high-dose O/sup +/ implantation into silicon  

Energy Technology Data Exchange (ETDEWEB)

Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...

1983-12-15

363

Molecular dynamics studies of silicon ion implantation  

Energy Technology Data Exchange (ETDEWEB)

Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary ...

1994-12-31

364

Light-weight free-standing carbon nanotube-silicon films for anodes of lithium ion batteries.  

Science.gov (United States)

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...

2010-07-27

365

Transmission electron microscopy study of plasma nitriding of electroplated chromium coating  

Energy Technology Data Exchange (ETDEWEB)

In this paper, the influence of plasma nitriding at temperature 720 deg. C for 20 h on the surface microstructure and interface microstructure of electroplated chromium coating was investigated. In these conditions, interdiffusion, mixing and reaction phenomena of elements originating from the substrate and coating material are more likely to occur, thus increasing the bonding strength between the coating and carbon steel substrate. The change of the structures from the substrate side to the coating surface, and the effect of the substrate steel on the interface structure were studied by cross-sectional transmission electron microscope observation (XTEM). The nitride layer formed on the surface was analyzed by X-ray diffraction method (XRD). After treatment at above conditions a 6-7 {mu}m thick nitride compound layer was formed in surface region and the same thick carbide compound layer was also formed in the interface region between electroplated chromium coating ...

2003-02-28

366

Transmission electron microscopy study of plasma nitriding of electroplated chromium coating  

International Nuclear Information System (INIS)

In this paper, the influence of plasma nitriding at temperature 720 deg. C for 20 h on the surface microstructure and interface microstructure of electroplated chromium coating was investigated. In these conditions, interdiffusion, mixing and reaction phenomena of elements originating from the substrate and coating material are more likely to occur, thus increasing the bonding strength between the coating and carbon steel substrate. The change of the structures from the substrate side to the coating surface, and the effect of the substrate steel on the interface structure were studied by cross-sectional transmission electron microscope observation (XTEM). The nitride layer formed on the surface was analyzed by X-ray diffraction method (XRD). After treatment at above conditions a 6-7 #mu#m thick nitride compound layer was formed in surface region and the same thick carbide compound layer was also formed in the interface region between electroplated chromium coating ...

2003-02-28

367

Transmission electron microscopy characterization of laser welding cast Ni-based superalloy K418 turbo disk and alloy steel 42CrMo shaft  

Energy Technology Data Exchange (ETDEWEB)

Microstructure characterization is important for controlling the quality of laser welding. In the present work, a detailed microstructure characterization by transmission electron microscopy was carried out on the laser welding cast Ni-based superalloy K418 turbo disk and alloy steel 42CrMo shaft and an unambiguous identification of phases in the weldment was accomplished. It was found that there are {gamma}-FeCrNiC austenite solid solution dendrites as the matrix, (Nb, Ti) C type MC carbides, fine and dispersed Ni{sub 3} Al {gamma}' phase as well as Laves particles in the interdendritic region of the seam zone. A brief discussion was given for their existence based on both kinetic and thermodynamic principles.

2008-08-11

368

Transmission electron microscopy characterization of laser welding cast Ni-based superalloy K418 turbo disk and alloy steel 42CrMo shaft  

International Nuclear Information System (INIS)

Microstructure characterization is important for controlling the quality of laser welding. In the present work, a detailed microstructure characterization by transmission electron microscopy was carried out on the laser welding cast Ni-based superalloy K418 turbo disk and alloy steel 42CrMo shaft and an unambiguous identification of phases in the weldment was accomplished. It was found that there are #gamma#-FeCrNiC austenite solid solution dendrites as the matrix, (Nb, Ti) C type MC carbides, fine and dispersed Ni_3 Al #gamma#' phase as well as Laves particles in the interdendritic region of the seam zone. A brief discussion was given for their existence based on both kinetic and thermodynamic principles.

2008-08-11

369

The effect of trace elements on the fatigue behaviour of a carbide-hardened Fe-Ni-Cr alloy. Der Effekt von Spurenelementen auf das Zeitstandverhalten einer karbidverfestigten Fe-Ni-Cr-Legierung  

Energy Technology Data Exchange (ETDEWEB)

Fatigue tests were accomplished with a series of specimens doped with trace elements of a hardened Fe-Ni-Cr alloy, cast and hardened with intermetallic phases for determining the influence of these elements on the high temperature strength properties. The results of extensive fatigue tests show that even small contents of Te, Bi, Se, Pb, Tl and Zn considerably influence the life and creep processes especially after longer running periods, when added individually or combinedly. In contrast to this, the fatigue ductility is reduced by trace element additions even with short running periods. The order in which the metallic trace elements influence the fatigue properties nearly correlates with earlier work concerning Ni- and Co-superalloys. (orig.)

1993-01-01

370

The effect of V and W addition on the high temperature strength properties of 12%Cr-15%Mn austenitic steels  

International Nuclear Information System (INIS)

The effect of W and V on the high temperature strength properties of 12%Cr-15%Mn austenitic steels was studied from the view point of precipitation hardening and internal stress. The contribution of W addition to the tensile and creep-rupture strength was not so large. By contrast the combined addition of W and V increased the strength considerably. These are resulted from the precipitation of fine vanadium nitride (VN) within grains and the enhancement of M_2_3C_6 type carbide precipitation at grain boundaries. The V added material had large internal stress value which is considered to be due to dislocation movement disturbed by fine vanadium nitrides. (author).

371

Surface durability of WC/C-coated case-hardened steel gear  

British Library Electronic Table of Contents (United Kingdom)

The purpose of this study is to investigate the influence of tungsten carbide/carbon (WC/C) coating on the surface durability of casehardened steel gear. Two kinds of WC/C coatings were deposited on the ground gear pair made of chromium molybdenum steel with carburizing and quenching. One is the conventional WC/C coating, and the other is WC/C coating with about 1 ?m CrN interlayer. Here, the WC/C-coated test pinion and the WC/C-coated one with CrN interlayer are represented by WT and ST, respectively. Non-coated test pinion is represented by NT. The surface roughness along the tooth profile direction of WT and ST was almost the same as that of NT. A spur gear test was carried out with an IAE power circulating type gear test rig under EP gear oil lubricating condition. The fatal failure mo...

2010-01-01

372

Study on the structural evolution of modified phenol-formaldehyde resin adhesive for the high-temperature bonding of graphite  

International Nuclear Information System (INIS)

A novel adhesive for carbon materials composed of phenol-formaldehyde resin, boron carbide and fumed silica, was prepared. The adhesive property of graphite joints bonded by the above adhesive treated at high-temperatures was tested. Results showed that the adhesive was found to have outstanding high-temperature bonding properties for graphite. The adhesive structure was dense and uniform even after the graphite joints were heat-treated at 1500 deg. C. Bonding strength was 17.1 MPa. The evolution of adhesive structure was investigated. The results indicated that the addition of the secondary additive, fumed silica, improved the bonding performance greatly. Borosilicate phase with better stability was formed during the heat-treatment process, and the volume shrinkage was restrained effectively, which was responsible for the satisfactory high-temperature bonding performance of graphite.

2006-01-01

373

Scientific report 1997; Rapport scientifique 1997  

Energy Technology Data Exchange (ETDEWEB)

In this book are found technical and scientific papers on the main works of the Direction of the Fuel Cycle (DCC) in France. The study fields are: the up-side of the nuclear fuel cycle with theoretical studies (plasma simulation) and technological developments and instrumentation (lasers diodes, carbides plasma projection, carbon 13 enrichment); the down-side nuclear fuel cycle with theoretical studies (ion Eu{sup 3+} complexation simulation, decay simulation, uranium and plutonium diffusion study, electrolyser operating simulation), scenario studies ( recycling, wastes management), experimental studies; dismantling and cleaning (soils cleaning, surface-active agent for decontamination, fault tree analysis); analysis with expert systems and mass spectrometry. (A.L.B.)

1998-07-01

374

Particulate composites in the TiC-TiYTZP system  

International Nuclear Information System (INIS)

Twelve powders of TiO_2-Y_2O_3-ZrO_2 solid solution of the methodically changed composition were prepared by a coprecipitation-calcination technique. After mixing with phenol-formaldehyde resin, the powders were calcinated for 2 hours at 1200"oC in vacuum. The resultant composite powders contained TiC and non-reacted carbon. Green compacts were sintered in vacuum at 1500"oC for 2 hours. A temperature increase was stopped at 1200"oC to react remains of carbon. There were two carbides in the composites TiC and ZrC. TiC non-stoichiometry depended on carbon content in the system. Phase composition of the depended on of titania and yttria in zirconia solid solution. The majority of the samples showed two tetragonal zirconia phases differing in lattice parameter and tetragonality. (author)

2004-09-12

375

Nuclear magnetic resonance study of La_3X compounds and related phases  

International Nuclear Information System (INIS)

Normal state nuclear magnetic resonance studies of the La_3In, La_3Tl compounds have been made in order to investigate the origin of the large temperature-dependent magnetic susceptibility. It is possible to analyse the different contributions to the susceptibility using Knight-shift and relaxation time T_1 measurements of In"1"1"5 and Tl"2"0"5 nuclei. The exchange enhancement of the spin-susceptibility chisub(pd) is of the same order as that found in A-15 compounds and the strong temperature-dependence of chi(T) is attributed to the presence of a peak in the electronic density of states near the Fermi level. The variation of the Knight-shift in the ternary alloys La_3Xsub(1-y)Xsub(y)sup(') is analogous to that observed in the corresponding La_3X phases, on the other hand the Knight-shift in the carbides La_3XC is temperature independent. (author).

376

Modeling the Spray Forming of H13 Steel Tooling  

British Library Electronic Table of Contents (United Kingdom)

On the basis of a numerical model, the temperature and liquid fraction of spray-formed H13 tool steel are calculated as a function of time. Results show that a preheated substrate at the appropriate temperature can lead to very low porosity by increasing the liquid fraction in the deposited steel. The calculated cooling rate can lead to a microstructure consisting of martensite, lower bainite, retained austenite, and proeutectoid carbides in as-spray-formed material. In the temperature range between the solidus and liquidus temperatures, the calculated temperature of the spray-formed material increases with increasing substrate preheat temperature, resulting in a very low porosity by increasing the liquid fraction of the deposited steel. In the temperature region where austenite decomposit...

2007-01-01

377

Microstructure and properties of ultrafine WC-10Co composites with chemically doped VC  

British Library Electronic Table of Contents (United Kingdom)

Vanadium carbide is the most effective grain growth inhibitor for ultrafine WC-Co composites due to its high solubility and mobility in the cobalt phase at relatively low temperatures; however, there are still some debates over the best way to introduce it into the WC-Co formulation. In this paper, the differences between admixed and chemically doped grain growth inhibitors on the microstructural development and properties of an ultrafine WC-10Co composite are discussed. The densification rate of chemically doped samples is slower in the early stage of sintering and the WC grain sizes of the sintered alloys are finer than those of admixed samples, leading to the increase of hardness and transverse rupture strength of the sintered alloys. The effectiveness of the chemically doped inhibitor ...

2011-01-01

378

Microstructural aspects of the corrosion of Alloy 800  

International Nuclear Information System (INIS)

Transmission electron microscopy studies on solution-annealed Alloy 800 revealed small (100-200 nm), spherical-shaped titanium carbide (face centered cubic structure) and large (200 nm-5 #mu#m), faceted titanium nitride (hexagonal structure) particles randomly distributed in the austenite matrix. The volume fraction of former particles was found to be greater than that of the latter. Corrosion studies of the alloy in acidic, chlorides and acidic chloride environments at room temperature indicated that the passivity of Alloy 800 was adversely affected by the addition Cl"- ions. X-ray photoelectron spectroscopy revealed that the surface film formed on the alloy at the onset of passivity consisted of Cr"3"+ (as Cr_2O_3), without any Fe"3"+/Fe"2"+ or Ni"2"+. Scanning electron microscopy studies indicated initiation of pitting at large, faceted particles, not at small, spherical-shaped ones.

2004-12-01

379

Influence of thermal aging on the intergranular corrosion resistance of types 304LN and 316LN stainless steels  

International Nuclear Information System (INIS)

Intergranular corrosion (IGC) resistance of types 304LN and 316LN stainless steels (SS) thermally aged at 823, 873, and 923 K for various durations was assessed by ASTM A262 practice A test (electrolytic etch test) and electrochemical potentiodynamic reactivation (EPR) test. The results indicated that the type 316LN SS has significantly improved IGC resistance compared to 304LN SS. Based on the results of these tests, time-temperature-sensitization (TTS) diagrams were developed for both alloys. The secondary precipitates formed during thermal aging treatments were electrochemically extracted and analyzed by X-ray diffraction (XRD) to determine the types of precipitates formed during the aging treatments. The results indicated that the precipitates were mostly of M_2_3C_6 carbides.

1996-01-01

380

Influence of thermal aging on the intergranular corrosion resistance of types 304LN and 316LN stainless steels  

International Nuclear Information System (INIS)

Intergranular corrosion (IGC) resistance of types 304LN and 316LN stainless steels (SS) thermally aged at 823, 873, and 923 K for various durations was assessed by ASTM A262 practice A test (electrolytic etch test) and electrochemical potentiodynamic reactivation (EPR) test. The results indicated that the type 316LN SS has significantly improved IGC resistance compared to 304LN SS. Based on the results of these tests, time-temperature-sensitization (TTS) diagrams were developed for both alloys. The secondary precipitates formed during thermal aging treatments were electrochemically extracted and analyzed by X-ray diffraction (XRD) to determine the types of precipitates formed during the aging treatments. The results indicated that the precipitates were mostly of M_2_3C_6 carbides.

381

Grafoil applications on-plant  

International Nuclear Information System (INIS)

Presented in this report are the quantitative and qualitative aspects of the more than 5,800 applications of Grafoil on-plant. The subject all-graphite product was originally made by the Union Carbide Corporation. Its utilization in the forms of valve packing, gasketing and sealant tapes for leak repair and prevention on-plant since March 1970 is marked with typical zero-leak results. For all practical purposes, the successful results with Grafoil implementation indicate an unqualified control of leakage problems that began in 1967 with the V-11 and V-12 valves in the primary system of N Reactor. Meaningfully, the accruals of savings with existing and future applications shall continue to be incalculable in personnel exposure, maintenance, and capital. Inherent in the savings are the devised methodology and innovative developments coordinately employed in resolving the leak repair problems.

382

Effects of modification on microstructure and properties of ultrahigh carbon (1.9wt.% C) steel  

British Library Electronic Table of Contents (United Kingdom)

The effects of a modifier that contains Rare Earths (RE), low melting point alloy (Al-Bi-Sb) and Ca-Si alloy on an ultrahigh carbon steel containing 1.9wt.% C were studied. Microstructure characterization was carried out with optical microscopy (OM) and scanning electronic microscopy (SEM) combined with energy-dispersive spectrometry (EDS). Upon modification, the continuous eutectic carbide network structure was broken up and changed to a partly isolated and finer blocky structure in the as-cast alloy. Differential scanning calorimetry (DSC) revealed that the eutectoid temperature increased and the eutectic temperature decreased for the modified alloy. Modification also improved the impact toughness of the tempered steel, with a significant increase from 6.5 to 12.6Jcm^-^2, despite the har...

2011-01-01

383

All sliding element journal bearing rock bit  

Energy Technology Data Exchange (ETDEWEB)

For years rock bit performance has been progressively improved by many innovative changes to the design of both the bit cutting structure and the bearing. The changes have offered increased footage per bit and reduced cost per foot of hole through longer bit life and/or faster penetration rate. Efforts to assist the industry in drilling deeper thru hard abrasive rocks such as cherts of West Texas, conglomerated of the Rockies and bromides of Oklahoma led to a major breakthrough in rock bit design - the development of the tungsten carbide cutting structure. When properly applied the bit far exceeded that of the non-sealed ball and roller bearing being used at the time. The bearing failure mode was one of severe race spalling and abrasive wear influenced by the drilling fluid entering the bearing.

1983-08-01

384

A semi-micro combustion assembly for the determination of carbon and hydrogen in actinide compounds  

International Nuclear Information System (INIS)

A rapid combustion unit (Baird and Tatlock) incorporating a combustion chamber provided with baffle plates for complete combustion of the sample without the use of a catalyst has been assembled in a glove box for the determination of carbon and hydrogen in actinide complexes. The unit has been modified employing a movable electric furnace and a proportional temperature controller, for decomposition of the sample at desired heating rates. The set-up was standardised employing various reference materials such as benzoic acid, acetanilide, sulphanilamide and 1-chloro 2:4 dinitrobenzene and the standard deviation in the measurements evaluated. It has also been used successfully for the determination of carbon in uranium carbide and carbon and hydrogen in some uranyl-#beta#-diketone-amine N-oxide complexes and in plutonium(IV) oxalate. (auth.).

1982-09-01

385

A semi-micro combustion assembly for the determination of carbon and hydrogen in actinide compounds  

International Nuclear Information System (INIS)

A rapid combustion unit (Baird and Tatlock) incorporating a combustion chamber provided with baffle plates for complete combustion of the sample without the use of a catalyst has been assembled in a glove box for the determination of carbon and hydrogen in actinide complexes. The unit has been modified employing a movable electric furnace and a proportional temperature controller, for decomposition of the sample at desired heating rates. The set-up was standardised employing various reference materials such as benzoic acid, acetanilide, sulphanilamide and 1-chloro 2:4 dinitrobenzene and the standard deviation in the measurements evaluated. It has also been used successfully for the determination of carbon in uranium carbide and carbon and hydrogen in some uranyl-#beta#-diketone-amine N-oxide complexes and in plutonium(IV) oxalate. (auth.).

2006-09-18

386

A review of the structural characteristics of alloy 800  

International Nuclear Information System (INIS)

The published literature is reviewed and supplemented by current information from the author's laboratory, to show the influence of various compositional, heat treatment and thermomechanical factors on the structural characteristics of Alloy 800. The features discussed include carbon, aluminium, titanium and boron, solution treatment, ageing treatments with and without applied strain, and cold working. Examples of the aspects reviewed include the effect of heat treatment and service or testing temperature on the austenite grain size, and the relative importance of M_2_3C_6 and TiC, the influence of carbon level on gamma prime, the effect of residual or steady stress combined with time at temperature on changes in carbide or gamma prime morphology, and on the appearance of sigma or other intermetallic phases. The questions posed by these features are discussed generally, in terms of their effect on the mechanical properties at ambient and elevated temperatures and ...

387

A micro-alloyed ferritic steel strengthened by nanoscale precipitates  

British Library Electronic Table of Contents (United Kingdom)

A ferritic steel with finely dispersed precipitates was investigated to reveal the fundamental strengthening mechanisms. The steel has a yield strength of 760MPa, approximately three times higher than that of conventional Ti-bearing high strength hot-rolled sheet steels, and its ultimate tensile strength reaches 850MPa with an elongation-to-failure value of 18%. Using energy dispersive X-ray spectroscopy (EDXS) and transmission electron microscope (TEM), fine carbides TiC with an average diameter of 10nm were observed in the ferrite matrix of the 0.08%Ti steel, and some cubic M23C6 precipitates were also observed at the grain boundaries and the interior of the grains. The finely dispersed TiC precipitates in the matrix provide matrix strengthening. The estimated magnitude of precipitation ...

2011-01-01

388

ITER Blanket First Wall (WBS 1.6{sub 1}A)  

Energy Technology Data Exchange (ETDEWEB)

International Thermonuclear Experimental Reactor (ITER) project is the international collaboration one for the commercialization of nuclear fusion energy through the technical and engineering verification. In ITER project, we plan to procure the blanket systems which has the risk of technology and cost when it is newly developed. We are developing the manufacturing process and joining technology for the ITER blanket to complete the procurement with qualified blanket system. To evaluate the soundness of manufacturing process, specimen and mock-up tests are being prepared. Finally, we can obtain the key technology of nuclear fusion reactor especially on the blanket design, joining and manufacturing technology through the present project and these technologies will help the construction of Korea fusion DEMO reactor and the development of commercial nuclear fusion reactor in Korea. In 1st year, through the fabrication of the Cu/SS and Be/Cu joint ...

2008-03-15

389

Low-temperature behavior of two ternary lanthanide nickel carbides: Superconducting LaNiC_2 and magnetic CeNiC_2  

International Nuclear Information System (INIS)

A study of the magnetic properties and the heat capacity as functions of temperature and magnetic field of two ternary carbides RNiC_2, where R=La and Ce, confirms that LaNiC_2 becomes superconducting at T_c=2.7thinspK, and that CeNiC_2 orders antiferromagnetically below 18thinspK. LaNiC_2 is a conventional superconductor with a critical field of 900 Oe at T=2thinspK. CeNiC_2 obeys the Curie-Weiss law between 50 and 300thinspK showing the nearly full Ce"3"+ magnetic moment, p_e_f_f=2.47(1)#mu#_B, and has a negative paramagnetic Weiss temperature #THETA#_p=-18.3(8)thinspK. A low net magnetic moment in the ordered state, which is far from saturation in a magnetic field of 5thinspT, is consistent with an antiferromagnetic ground state. Below 20thinspK CeNiC_2 shows multiple-step magnetic transitions at 18, 10, and 2.4thinspK. Both LaNiC_2 (in the normal state) and CeNiC_2 have the same electronic heat capacity, #gamma#=6.5(2)thinspmJ/molthinspK"2, which is typical for ...

1998-07-01

390

Influence of titanium addition on pitting, crevice and intergranular corrosion resistance of type 316 austenitic stainless steel  

International Nuclear Information System (INIS)

Pitting crevice and intergranular corrosion resistances of titanium-modified low-carbon austenitic stainless steel with a nominal composition of 15% Cr, 15% Ni, 0.24% Ti and 2.5% Mo were found superior to conventional type 316 SS. Potentiodynamic anodic polarization studies in a neutral chloride medium (0.5M NaCl solution) and the immersion studies in boiling solution containing (by wt%) 11% H_2SO_4 + 3% HCl + 1% CuCl_2 + 1% FeCl_3 for 24 h showed higher critical pitting and crevice potentials and lower corrosion rate values respectively. The elemental composition across the pit sites was also determined by EPMA analysis. Sensitization studies carried out by following ASTM A262 practices A and E and electrochemical potentiokinetic reactivation (EPR) tests on this alloy heat treated at 923 K for 1 and 50 h showed a better resistance to intergranular corrosion than that for conventional type 316 SS. From the results available, the most likely reason for the improvement in the localized ...

391

Upper reactor core supporting structure of highly earthquake-proof type  

International Nuclear Information System (INIS)

Fuel assemblies in a reactor pressure vessel are disposed in a reactor core shroud. The own weight of the fuel assembly is supported by a reactor core support plate, and is supported, for the horizontal direction, by an upper lattice plate and the reactor core support plate. A support portion for the upper portion of the fuel assembly is disposed above the fuel assembly, and a support portion for the support portion described above is joined to a shroud head by welding. The support portion for the upper portion of the fuel assembly has a network-like portion which absorbs and disperses rising force which exerted on the fuel assembly when the fuel assembly is risen by seismic forces. The rising force exerted on the fuel assembly absorbed by the network-like portion is effectively transferred to the shroud head by the support portion. With such a constitution, rising of the fuel assembly can be prevented against the seismic vibrations having prominent vertical ...

1993-05-14

392

The advanced CANDU reactor: The next step in safety and economics  

International Nuclear Information System (INIS)

The Advanced CANDU Reactor (ACR"T"M) is the 'Next Generation' CANDU"R reactor, aimed at safe, reliable power production at a capital cost significantly less than that of current reactors such as the very successful CANDU 6 reactors (e.g., Wolsong 1-4). The Wolsong 1-4 units are being joined by the Qinshan Phase 3 units in China as the current successful examples of CANDU technology. The ACR design builds on this knowledge base, adding a selected group of innovations to obtain substantial cost reduction while retaining a proven design basis. The ACR maximizes the use of components and equipment applications that are well proven through CANDU and other nuclear experience. Joint development of equipment designs and specifications with manufactures has been emphasized. Similarly, the ACR design emphasizes constructability, and takes advantage of inherent CANDU features to enable short project and construction schedules. Overall, the ACR design represents a balance of ...

2003-04-01

393

The ITER divertor cassette project  

International Nuclear Information System (INIS)

The divertor 'Large Project' was conceived with the aim of demonstrating the feasibility of meeting the lifetime requirements by employing the candidate armor materials of beryllium, tungsten (W) and carbon-fiber-composite (CFC). At the start, there existed only limited experience with constructing water-cooled high heat flux armored components for tokamaks. To this was added the complication posed by the need to use a silver-free joining technique that avoids the transmutation of n-irradiated silver to cadmium. The research project involving the four Home Teams (HTs) has focused on the design, development, manufacture and testing of full-scale Plasma Facing Components (PFCs) suitable for ITER. The task addressed all the issues facing ITER divertor design, such as providing adequate armor erosion lifetime, meeting the required armor-heat sink joint lifetime and heat sink fatigue life, sustaining thermal-hydraulic and electromechanical loads, and seeking to identify ...

1999-12-01

394

Sympatric Distribution of Three Human Taenia Tapeworms Collected between 1935 and 2005 in Korea  

Science.gov (United States)

Taeniasis has been known as one of the prevalent parasitic infections in Korea. Until recently, Taenia saginata had long been considered a dominant, and widely distributed species but epidemiological profiles of human Taenia species in Korea still remain unclear. In order to better understand distribution patterns of human Taenia tapeworms in Korea, partial nucleotide sequences of mitochondrial cox1 and ITS2 (internal transcribed spacer 2) were determined, along with morphological examinations, on 68 Taenia specimens obtained from university museum collections deposited since 1935. Genomic DNA was extracted from formalin-preserved specimens. Phylogenetic relationships among the genotypes (cox1 haplotype) detected in this study were inferred using the neighbor-joining method as a tree building method. Morphological and genetic analyses identified 3 specimens as T. solium, 51 specimens as T. asiatica, and 14 specimens as T. saginata. Our results indicate that all 3 ...

2008-12-20

395

String Junctions and Holographic Interfaces  

CERN Document Server

In this paper we study half-BPS type IIB supergravity solutions with multiple $AdS_3\\times S^3\\times M_4$ asymptotic regions, where $M_4$ is either $T^4$ or $K_3$. These solutions were first constructed in [1] and have geometries given by the warped product of $AdS_2 \\times S^2 \\times M_4 $ over $\\Sigma$, where $\\Sigma$ is a Riemann surface. We show that the holographic boundary has the structure of a star graph, i.e. $n$ half-lines joined at a point. The attractor mechanism and the relation of the solutions to junctions of self-dual strings in six-dimensional supergravity are discussed. The solutions of [1] are constructed introducing two meromorphic and two harmonic functions defined on $\\Sigma$. We focus our analysis on solutions corresponding to junctions of three different conformal field theories and show that the conditions for having a solution charged only under Ramond-Ramond three-form fields reduce to relations involving the positions of the poles ...

2010-01-01

396

Soil less culture; I sistemi di coltivazione senza suolo  

Energy Technology Data Exchange (ETDEWEB)

The paper gives a general view of techniques and systems related to soil less culture developed in the last years (on substrate in beg; NFT; Ebb-Flood, aeroponic,..) taking into account their management and problems (water quality, control of plant nutrition and irrigation; substrates; pathological aspects,..). The evolution, now in progress, of soil less culture from open to closed system as a way to realized an environmental friendly growing system, is considered. When plants are grown with open cycle techniques a large amount of waste solution, with an a high content of nutrients, are discharged in soil and water. Furthermore, they need an extra-utilization of water and fertilizers. Another aspect is the utilization of low cost substrates, which can be reused for more than one cultural cycle without negative effects on yield, and also finally discharged without negative effects on the environment. The development of soil less culture in countries, such as Italy, where only in the ...

1996-01-01

397

Renewable energy in the urban setting: Year two  

Energy Technology Data Exchange (ETDEWEB)

At the 1996 Conference in North Carolina, The Green Institute began to share its story. Their presentation this year will cover where they are in the design process and their plans for using solar and wind technologies in the development of an Eco-Industrial Park and Business Incubator. Located in a Federal Enterprise Community in Minneapolis, this project borrows sustainable and green building principles using the Rocky Mountain Institute and Solar Living Center as models. Using a change in the paradigm regarding how industry does business, The Green Institute is joining with developments across the country that are putting together Eco-Industrial Parks which use closed loop production systems to reduce waste and emissions generated from manufacturing processes. Using renewable energy, both solar and wind, presents challenges both in the integration of systems on this small site and the educational opportunities with a large potential audience outside the ...

1997-12-31

398

Reactor fuel cladding tube with excellent corrosion resistance and method of manufacturing the same  

International Nuclear Information System (INIS)

The present invention provides a fuel cladding tube having an excellent corrosion resistance and thus a long life, and a suitable manufacturing method therefor. Namely, in the fuel cladding tube, the outer circumference of an inner layer made of a zirconium base alloy is coated with an outer layer made of a metal more corrosion resistant than the zirconium base alloy. Ti or a titanium alloy is suitable for the corrosion resistant metal. In addition, the outer layer can be coated by a method such as vapor deposition or plating, not limited to joining of the inner layer material and the outer layer material. Specifically, a composite material having an inner layer made of a zirconium alloy coated by the outer material made of a titanium alloy is applied with hot fabrication at a temperature within a range of from 500 to 850degC and at a fabrication rate of not less than 5%. The fabrication method includes any of extrusion, rolling, drawing, and casting. As the ...

1993-07-14

399

Portable fluid X-ray diagnostic system  

Energy Technology Data Exchange (ETDEWEB)

A portable X-ray image system is described comprising: (a) a base assembly including panels and hinges joining the panels together along edges, and compression stops for biasing the hinges to compensate for the weight of payload when mounted on the base assembly, the compression stops being located for interaction with the hinges for biasing the panels to exhibit upward bowing when laid upon a flat surface prior to loading, and to provide resiliency for facilitating the base assembly assuming a substantially flat configuration when a predetermined payload is placed upon the base assembly; (b) an X-ray member; (c) apparatus for detachably mounting a table member to the base assembly to hold the table member at a location above the base; (d) an X-ray source; (e) means for sensing X-rays to form an image; (f) means for mounting the X-ray source and the X-ray sensing means on opposite sides relative to the table member and supported by the base assembly; (g) releasable ...

1989-02-14

400

Monovalent cation-induced structure of telomeric DNA: The G-quartet model  

Energy Technology Data Exchange (ETDEWEB)

We have investigated the structures formed by oligonucleotides composed of two or four repeats of the telomeric sequences from Oxytricha and Tetrahymena. The Oxytricha four-repeat molecule (d(T4G4)4 = Oxy-4) forms structures with increased electrophoretic mobility in nondenaturing gels containing Na+, K+, or Cs+, but not in gels containing Li+ or no added salt. Formation of the folded structure results in protection of a set of dG's from methylation by dimethyl sulfate. Efficient UV-induced cross-links are observed in Oxy-4 and the related sequence from Tetrahymena (d(T2G4)4 = Tet-4), and join thymidine residues in different repeats. Models proposed to account for these data involve G-quartets, hydrogen-bonded structures formed from four guanosine residues in a square-planar array. We propose that the G-quartet structure must be dealt with in vivo by the telomere replication machinery.

1989-12-01

401

Manufacturing of small scale W monoblock mockups by hot radial pressing  

International Nuclear Information System (INIS)

In the frame of the European Technology R and D programme for International thermonuclear experimental reactor (ITER) and in the area of high heat flux plasma facing components (HHFC), representative small-scale mock-ups were manufactured and tested to compare different concepts and joining technologies (i.e. active brazing, hot isostatic pressing (HIPping), diffusion bonding, etc.). On the basis of the results obtained by thermal fatigue tests, the monoblock concept resulted to be the most robust one, particularly when the HIPping manufacturing technology is used. Within this programme, ENEA developed an alternative technique for manufacturing plasma-facing components with a monoblock geometry of the ITER machine. The basic idea of this technique, named hot radial pressing (HRP), is to perform a radial diffusion bonding between the cooling tube and the armour tile by pressurising the internal tube only and by keeping the process parameters within the range in ...

2003-09-01

402

Manufacturing and testing of monoblock tungsten small-scale mock-ups  

Energy Technology Data Exchange (ETDEWEB)

In the frame of the European Technology R and D program for ITER, and in the area of High Heat Flux plasma facing Components (HHFC), representative small-scale mock-ups were manufactured and tested to compare different concepts and joining technologies (i.e. active brazing, Hot Isostatic Pressing (HIPping), diffusion bonding, etc.). On the basis of the results obtained by thermal fatigue tests, the monoblock concept resulted to be the most promising one, particularly when the HIPping manufacturing technology is used. Within this program, ENEA manufactured tungsten monoblock mock-ups by using the HIPping technology. The mock-ups were tested with respect to thermal fatigue and, upon screening tests, the best performance obtained was 15 MW/m{sup 2} for 200 cycles. One of these mock-ups was enclosed in the 'Paride' neutron irradiation campaign. This campaign has the scope of enlarging the available database on the performance degradation of ...

2001-10-01

403

Manufacturing and testing of monoblock tungsten small-scale mock-ups  

International Nuclear Information System (INIS)

In the frame of the European Technology R and D program for ITER, and in the area of High Heat Flux plasma facing Components (HHFC), representative small-scale mock-ups were manufactured and tested to compare different concepts and joining technologies (i.e. active brazing, Hot Isostatic Pressing (HIPping), diffusion bonding, etc.). On the basis of the results obtained by thermal fatigue tests, the monoblock concept resulted to be the most promising one, particularly when the HIPping manufacturing technology is used. Within this program, ENEA manufactured tungsten monoblock mock-ups by using the HIPping technology. The mock-ups were tested with respect to thermal fatigue and, upon screening tests, the best performance obtained was 15 MW/m"2 for 200 cycles. One of these mock-ups was enclosed in the 'Paride' neutron irradiation campaign. This campaign has the scope of enlarging the available database on the performance degradation of prototypical basic solutions of ...

2001-10-01

404

Hydrogen utilization efficiency in PEM fuel cells  

Energy Technology Data Exchange (ETDEWEB)

In this paper, we present the work carried out within the framework of the FEVER project (Fuel cell Electric Vehicle for Efficiency and Range), an European project coordinated by Renault, joining Ecole des Mines de Paris, Ansaldo, De Nora, Air Liquide and Volvo. For the FEVER project, where an electrical air compressor is used for oxidant supply, there is no need for hydrogen spill over, meaning that the hydrogen stoichiometry has to be as close to one as possible. To determine the optimum hydrogen utilization efficiency for a 10 kW Proton Exchange Membrane Fuel Cell (PEMFC) fed with pure hydrogen, a 4 kW prototype fuel cell was tested with and without a hydrogen recirculator at the test facility of Ecole des Mines de Paris. Nitrogen cross over from the cathodic compartment to the anodic compartment limits the hydrogen utilization of the fuel cell without recirculator to 97.4 % whereas 100% is feasible when a recirculator is used. 5 refs.

1998-07-01

405

Homology analyses of the protein sequences of fatty acid synthases from chicken liver, rat mammary gland, and yeast  

Energy Technology Data Exchange (ETDEWEB)

Homology analyses of the protein sequences of chicken liver and rat mammary gland fatty acid synthases were carried out. The amino acid sequences of the chicken and rat enzymes are 67% identical. If conservative substitutions are allowed, 78% of the amino acids are matched. A region of low homologies exists between the functional domains, in particular around amino acid residues 1059-1264 of the chicken enzyme. Homologies between the active sites of chicken and rat and of chicken and yeast enzymes have been analyzed by an alignment method. A high degree of homology exists between the active sites of the chicken and rat enzymes. However, the chicken and yeast enzymes show a lower degree of homology. The DADPH-binding dinucleotide folds of the {beta}-ketoacyl reductase and the enoyl reductase sites were identified by comparison with a known consensus sequence for the DADP- and FAD-binding dinucleotide folds. The active sites of all of the enzymes are primarily in hydrophobic regions of ...

1989-11-01

406

High performance ultra-steels with recyclable design  

Energy Technology Data Exchange (ETDEWEB)

The global production of steel is predicted to increase rapidly to meet future demands. In order to conserve the natural resources, certain measures must be taken. These include perfecting the recycling of steel, improving the performance to extend the life of the material, and reduce the need for massive production of steel by increasing the strength of the material. This paper presented a design concept for ultrafine complex microstructure steel. The National Research Institute for Metals in Japan has worked on a project which investigated 800 MPa ferrite steel for welded structures with a chemical composition similar to 400 MPa-class plain carbon steel. The doubled strength was attributed to grain refinement. Novel welding techniques were also used for joining the ultrafine microstructure. In this study, low carbon Si-Mn ferrite-pearlite steels were subjected to a thermo-mechanical treatment to produce a microstructure of 1 micron order ultrafine grain ferrite ...

2000-07-01

407

Evolution of the triangle zone in the Rocky Mountains Foothills near Coalspur, Central Alberta  

Energy Technology Data Exchange (ETDEWEB)

A triangle zone, which commonly occurs along the external margin of a foreland thrust and fold belt with a buried thrust front, is underlain by a subhorizontal, blind, foreland-verging thrust that ends against a foreland-dipping, hinterland-verging thrust. These contemporaneous thrusts, active towards the end of orogenesis, enclose an intercutaneous wedge that moved towards the foreland. During orogenesis, a triangle zone evolves through periodic replacement of faults bounding the active wedge. Replacements occur in cycles during each of which a lower fault tends to be replaced by one in a lower stratigraphic horizon, an upper fault by one farther away from the foreland. Each cycle ends with the lower fault moving to a younger horizon where it joins a new, more external upper fault. Near Coalspur, the triangle zone exposes the remnants of several wedges involving Upper Cretaceous and Palaeocene molasse. Most of these wedges developed during the last cycle but one ...

1987-08-01

408

Energy report Frankfurt am Main 1992; Stadt Frankfurt am Main. Energiebericht 1992  

Energy Technology Data Exchange (ETDEWEB)

By joining the `climate association of European cities`, Frankfurt has agreed to reduce its CO{sub 2}-emissions by 50% by the year 2010. The so-called `climate offense 1991` was the first regulatory paper to be set up by a community to reach this goal over a long term. This report now represents the present level of the project. Main points are the development of houses with low entropy, the retrofitting of heating systems, water saving measures and energy management. (BWI) [Deutsch] Durch den Beitritt zum `Klima-Buendnis der Europaeischen Staedte` hat sich die Stadt Frankfurt/M. verpflichtet, die CO{sub 2}-Emissionen bis zum Jahr 2010 um 50% zu senken. Mit der sog. `Klimaoffensive 1991` wurde dann erstmals von einer Kommune in Deutschland ein detailliertes Regelwerk aufgestellt, um dieses Ziel langfristig erreichen zu koennen. Der vorliegende Bericht stellt den aktuellen Stand des Projektes dar. Kernpunkte sind die Entwicklung von Niedrigentropiehaeusern, die ...

1993-12-31

409

Current status and future plan of JMTR Hot Laboratory  

Energy Technology Data Exchange (ETDEWEB)

The newly developed techniques by the Hot Laboratory (JMTR HL) have provided for us the key information on behavior of specimens due to mechanical / physical / chemical / synergistic effects of radiation, stress and water for fission and fusion reactor environment. These techniques are focused on several topics as follows; (1) miniaturized specimen test for the development of fusion reactor materials, (2) slow strain rate tensile testing (SSRT) and crack propagation measuring tests for the study of Irradiation Assisted Stress Corrosion Cracking (IASCC) of core internals of LWR, (3) handling technique on specimens including tritium for the research and development of tritium breeders and neutron multiplier as fusion blanket materials, (4) joining method using the Tungsten Inert Gas (TIG) welding technique for re-assembling of capsule and re-fabrication of specimen and (5) nondestructive evaluation using ultrasonic wave and infrared thermography for the quantitative ...

1999-08-01

410

Constraining the Dark Energy Equation of State using Alternative High-z Cosmic Tracers  

CERN Document Server

We propose to use alternative cosmic tracers to measure the dark energy equation of state and the matter content of the Universe [w(z) & Omega_m]. Our proposed method consists of two components: (a) tracing the Hubble relation using HII galaxies which can be detected up to very large redshifts, z~4, as an alternative to supernovae type Ia, and (b) measuring the clustering pattern of X-ray selected AGN at a median redshift of z~1. Each component of the method can in itself provide interesting constraints on the cosmological parameters, especially under our anticipation that we will reduce the corresponding random and systematic errors significantly. However, by joining their likelihood functions we will be able to put stringent cosmological constraints and break the known degeneracies between the dark energy equation of state (whether it is constant or variable) and the matter content of the universe and provide a powerful and alternative route to measure the ...

2009-01-01

411

Are there SO_2 externality costs beyond the Clean Air Act Amendments of 1990?  

International Nuclear Information System (INIS)

Inclusion of environmental externality costs in the selection of utility resources has become a reality in New York, Massachusetts, Nevada and California. Soon several other jurisdictions are likely to join these states in using environmental externality costs in decision-making. The consideration of environmental externalities are bound to profoundly affect utility decision-making in the future. So far attention has focused largely on air emission externalities of SO_2, NO_x and CO_2. However, the recent Clean Air Act Amendments (CAAA) will reduce SO_2 emissions from utilities by about 50 percent. With such a large reduction in SO_2 loading, the question has been raised as to the need to further consider SO_2 externality costs in decision-making. This paper comments on this issue. By using generation and emission data from New York utilities, the paper shows that SO_2 emission externalities exist even after complying with requirements of the CAAA.

1992-06-21

412

Alternative High-z Cosmic Tracers and the Dark Energy Equation of State  

CERN Document Server

We propose to use alternative cosmic tracers to measure the dark energy equation of state and the matter content of the Universe [w(z) & \\Omega_m]. Our proposed method consists of two components: (a) tracing the Hubble relation using HII-like starburst galaxies, as an alternative to SNIa, which can be detected up to very large redshifts, z~4, and (b) measuring the clustering pattern of X-ray selected AGN at a median redshift of ~1. Each component of the method can in itself provide interesting constraints on the cosmological parameters, especially under our anticipation that we will reduce the corresponding random and systematic errors significantly. However, by joining their likelihood functions we will be able to put stringent cosmological constraints and break the known degeneracies between the dark energy equation of state (whether it is constant or variable) and the matter content of the universe and provide a powerful and alternative rute to measure the ...

2009-01-01

413

A New Landscape: Opportunities and Pitfalls for Universities Expanding in the Persian Gulf  

Science.gov (United States)

Dozens of universities--primarily from the United States, United Kingdom, and Australia--are eyeing the Gulf region as a largely untapped reservoir of academic potential and economic opportunity. During the last few years, UAE states like Dubai, Abu Dhabi, Qatar, and Ras al Khaymah have spent billions to entice top universities. And many colleges are responding--examples include New York University's campus in Abu Dhabi; Michigan State University's school in Dubai; and big names like Cornell, Northwestern, and Carnegie Mellon that have set up shop in Qatar. Typically, Western universities begin their foray into the Gulf by teaming with local investors. The colleges oversee the academic infrastructure while the investors front all operational costs. The partnerships are complicated. Some investors are mining the UAE's educational zeal for profit. In other cases, schools join forces with the region's numerous royal families, who are mostly interested in furthering ...

2008-12-01

414

Synthesis of Si nanowires for MEMS cantilever sensor applications  

Science.gov (United States)

We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the ...

2004-12-01

415

Novel silicon fabrication process for high-aspect-ratio micromachined parts  

Energy Technology Data Exchange (ETDEWEB)

Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...

1995-08-01

416

Clinically silent heterotaxy with polysplenia syndrome and IVC azygous continuation draining to SVC: CT findings. Case report  

International Nuclear Information System (INIS)

Patients with heterotaxy syndrome often have complex cardiac and extracardiac anomalies requiring further detailed diagnostic evaluation. They often present severe cardiac failure early in life. Newer radiological modalities in the form of spiral computed tomography (CT) and three-dimensional reconstruction of spiral CT allow clear definition of the anatomy of these anomalies. A 59-year-old woman was diagnosed with polysplenia and multiple anomalies in an abdominal ultrasonography (US) during a control medical examination due to a trivial dietary mistake. She was then referred to our institution for further examination of these anomalies and an additional thoraco-abdominal computed tomography (CT) examination. The patient was totally asymptomatic at the time of admission. There was no significant past history and no abnormal laboratory data. We performed abdominal, pelvic and thoracic CT examinations using Somatom Siemens Emotion scanner. Non-enhanced sections were obtained with 8 mm ...

2007-01-01

417

Visco-elastic energy dissipation in a SiAlON ceramic: Quantification and implications for fatigue resistance  

International Nuclear Information System (INIS)

In this letter a method to estimate the visco-elastic response of monolithic ceramics to cyclic loading conditions at high temperatures is proposed. A relation is observed between the visco-elastic energy dissipation measured for two silicon nitride materials, and the structural characteristics of their respective intergranular phases. Some consequences for the fatigue resistance of the tested materials, and of non-transforming monolithic ceramics in general, are discussed. Two batches (G for glassy and C for crystalline) of SiAlON have been studied. The G-batch is obtained by pressureless sintering of silicon nitride powder with Y_2O_3 (6 wt%) and 6AlN-SiO_2 (5 wt%) as sintering additives. The main phase after sintering is #beta#-sialon. Upon cooling from the sintering temperature the amorphous intergranular residues of the sintering additives and of SiO_2, which is unavoidably present as a thin layer on the silicon ...

418

Ultrathin coatings of nanoporous materials as property enhancements for advanced functional materials  

International Nuclear Information System (INIS)

This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials on ...

419

Turning the Moon into a Solar Photovoltaic Paradise  

Science.gov (United States)

Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and ...

2006-01-01

420

Temperature dependence of a twofold magnetic behaviour of a nanoscopic metal/silicon hybrid system - a comparison between Ni/Si and Co/Si  

Energy Technology Data Exchange (ETDEWEB)

The investigated hybrid nanocomposite consists of a porous silicon template with electrochemically embedded Ni or Co nanostructures and offers magnetic characteristics which can be tailored by the electrochemical process parameters during fabrication. A twofold magnetic behaviour can be observed, a first one due to the spinmagnetism at magnetic fields below the saturation magnetization of the deposited metals and a second non-saturating term at higher fields (>1 T up to 7 T) above the saturation magnetization. In case of Ni deposited within the pores this non-saturating term shows a paramagnetic characteristic and follows exactly the Curie-Weiss law, whereas for Co/porous silicon samples the temperature dependent magnetization shows some deviations from the Curie Weiss law. In this high field region a difference in the temperature dependence between Ni and Co is observed whereas the non-saturating term does not depend on the geometry of ...

2009-10-15

421

TIARA: A large solid angle silicon array for direct reaction studies with radioactive beams  

International Nuclear Information System (INIS)

A compact, quasi-4? position sensitive silicon array, TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the ?-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The 14N(d,p)15N reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the 15N ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA calculations. Transferred l-values are in very good agreement ...

2010-03-11

422

Single-pulse excimer laser nanostructuring of silicon: A heat transfer problem and surface morphology  

Science.gov (United States)

We present computer modeling along with experimental data on the formation of sharp conical tips on silicon-based three-layer structures that consist of a single-crystal Si layer on a 1 {mu}m layer of silica on a bulk Si substrate. The upper Si layers with thicknesses in the range of 0.8-4.1 {mu}m were irradiated by single pulses from a KrF excimer laser focused onto a spot several micrometers in diameter. The computer simulation includes two-dimensional time-dependent heat transfer and phase transformations in Si films that result from the laser irradiation (the Stefan problem). After the laser pulse, the molten material self-cools and resolidifies, forming a sharp conical structure, the height of which can exceed 1 {mu}m depending on the irradiation conditions. We also performed computer simulations for experiments involving single-pulse irradiation of bulk silicon, reported by other groups. We discuss conditions under which different types ...

2008-05-01

423

Quality Management for Neutron Transmutation Doping of Silicon Ingot in HANARO  

Energy Technology Data Exchange (ETDEWEB)

By using this doping method, silicon semiconductors with extremely uniform dopant distributions can be produced, and this is the dominant advantage of NTD compared with a conventional chemical doping. Good uniformity of a dopant concentration is usually required for high power applications such as thyristor (SCR), IGBT, IGCT and GTO and for special sensors. Achieving an accurate neutron fluence corresponding to a target resistivity as well as a uniform irradiation is the prime target of a neutron irradiation for NTD. Generally, in order to reach an accurate neutron fluence, a real time neutron flux is monitored by a neutron detector such as a Self-powered Neutron Detector(SPND). And, after an irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of a neutron activation sample that has been irradiated with a silicon ingot, and thus the SPND can be properly calibrated. Excellent irradiation uniformity and a ...

2007-10-15

424

Proposal to negotiate an amendment to an existing contract for the supply of thick 6 inch silicon micro-strip sensors for the CMS tracker  

CERN Document Server

This document concerns the proposal to negotiate an amendment to an existing contract for the supply of thick 6 inch silicon micro-strip sensors for the CMS tracker. For the reasons explained in this document, the Finance Committee is invited to approve an amendment to an existing contract with HAMAMATSU PHOTONICS (CH) for the supply of 7 000 thick 6 inch silicon micro-strip sensors for the CMS tracker, for an amount of 3 248 000 euros (5 131 840 Swiss francs), not subject to revision, with an option for up to 11 000 additional sensors, for a maximum amount of 4 708 000 euros (7 438 640 Swiss francs), not subject to revision, bringing the total maximum amount of the amendment to 7 956 000 euros (12 570 480 Swiss francs) not subject to revision. This total maximum amount will be added to the initial contract amount of 415 835 000 Japanese yen (4 879 824 Swiss francs), not subject to revision. The amounts in Swiss francs have been calculated ...

2004-01-01

425

Process model for carbothermic production of silicon metal  

Energy Technology Data Exchange (ETDEWEB)

This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid flow fields etc, are ...

1995-09-12

426

Modeling key cupola reactions: Behavior of carbon, silicon and manganese  

Energy Technology Data Exchange (ETDEWEB)

In the present study, models of key chemical processes governing the compositions of the tapped metal from the cupola on the basis of physico-chemical fundamentals have been developed. As evident from the literature survey, the investigations conducted in the past have focused their attention on one phenomenon at a time; for example, a particular chemical reaction, measurement of gas composition or the temperature distribution inside a cupola. Notwithstanding the importance of these studies and their contribution toward the understanding of cupola operation, mathematical models of key chemical processes and their interdependence must be investigated to obtain a complete insight into the various interlinked phenomena occurring inside a cupola. For example, the oxidation of the metallic charge leads to the formation of iron oxide which influences the final content of elements such as silicon, manganese and carbon. The processes considered in this study are oxidation ...

1991-01-01

427

Mechanism for transient-enhanced diffusion in ion-implanted silicon  

International Nuclear Information System (INIS)

High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients as a function of concentration. Diffusion ...

1985-03-01

428

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}

1999-03-01

429

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon  

International Nuclear Information System (INIS)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.

1999-03-01

430

Investigation of texturization for crystalline silicon solar cells with sodium carbonate solutions  

Energy Technology Data Exchange (ETDEWEB)

We investigate a new texturization technique for crystalline silicon solar cells with sodium carbonate (Na{sub 2}CO{sub 3}) solutions. We show the dependence of the hemispherical surface reflectance on solution temperature, the etching time and the Na{sub 2}CO{sub 3} concentration. Furthermore, we investigate what element in Na{sub 2}CO{sub 3} solution influences the texturing for reducing the texturing time. As a result of experiments, we find it possible to get low reflectance in a shorter texturing time by the addition of NaHCO{sub 3}. The size of texture becomes smaller by the addition of NaHCO{sub 3} but the etching rate does not change. We conclude carbonic ion and/or its compound seems to play an important role as the initiator of pyramidal structure. This texturing method is cost effective because there is no need of expensive IPA, and the surface reflectance is reduced sufficiently in a short time. This method is promising for a large-scale production of ...

2000-04-01

431

Integration of fiber coupled high-Q silicon nitride microdisks with magnetostatic atom chips  

CERN Document Server

Micron scale silicon nitride (SiNx) microdisk optical resonators fabricated on a silicon wafer are demonstrated with Q = 3.6 x 10^6 (finesse = 5 x 10^4) and an effective mode volume of 15 (\\lambda / n)^3 at wavelengths \\lambda ~ 852 nm resonant with the D2 transition manifold of cesium. A dilute hydrofluoric wet etch is shown to provide sensitive tuning of the microdisk optical resonances, and robust mounting of a fiber taper provides efficient fiber optic coupling to the SiNx microdisk cavities while allowing unfettered optical access for laser cooling and trapping of atoms. Initial measurement of a hybrid atom-cavity chip indicates that cesium adsorption on the surface of the SiNx microdisks results in significant red-detuning of the disk resonances. A technique for parallel integration of multiple (10) microdisks with a single optical fiber taper is also demonstrated.

2006-01-01

432

Influence of microstructural characteristics on the mechanical properties of silicon nitride with Al{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} as sintering aids  

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized by high aspect ratio.-Si{sub 3}N{sub 4} ...

2003-07-01

433

Influence of metallurgical factors on corrosion and electrochemical behavior of structural materials  

Energy Technology Data Exchange (ETDEWEB)

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO/sub 2/. As shown by the investigations of a study of the anodic behavior of Fe/sub 40/Ni/sub 40/P/sub 14/B/sub 6/ and Fe/sub 40/Ni/sub 38/Mo/sub 4/B/sub 18/, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but ...

1986-07-01

434

Influence of metallurgical factors on corrosion and electrochemical behavior of structural materials  

International Nuclear Information System (INIS)

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO_2. As shown by the investigations of a study of the anodic behavior of Fe_4_0Ni_4_0P_1_4B_6 and Fe_4_0Ni_3_8Mo_4B_1_8, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but without the boron. The authors note that ...

1986-01-01

435

Gate-oxide integrity for polysilicon thin-film transistors: a comparative study for ELC, MILC and SPC crystallized active polysilicon layer  

International Nuclear Information System (INIS)

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si films are the main factors that ...

2006-01-01

436

Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation  

Energy Technology Data Exchange (ETDEWEB)

The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si{sup +}, 1 {times} 10{sup 16}/cm{sup 2}, implant. A 4{times} larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10{times} smaller diffusion relative to markers without the MeV Si{sup +} implant. This data demonstrates that a 2 MeV Si{sup +} implant injects vacancies into the near surface region.

1997-04-01

437

Electrical properties of ultra-thin oxynitrided layer using N{sub 2}O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass  

Energy Technology Data Exchange (ETDEWEB)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...

2007-06-04

438

Electrical properties of ultra-thin oxynitrided layer using N_2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass  

International Nuclear Information System (INIS)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...

2007-06-04

439

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface  

Energy Technology Data Exchange (ETDEWEB)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.

2004-02-01

440

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface  

International Nuclear Information System (INIS)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

2004-02-01

441

Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter extractions have ...

2004-02-01

442

Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon  

International Nuclear Information System (INIS)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter ...

2004-02-01

443

Deposition of plasma-polymerized hydroxyethyl methacrylate (HEMA) on silicon in presence of argon plasma  

International Nuclear Information System (INIS)

2-hydroxyethyl methacrylate (HEMA) has been deposited onto the surface of silicon substrate (thickness = 500 ?m) using plasma polymerization technique. Polymerization process was carried out in an in-house developed inductively coupled plasma polymerization setup. The depositions were carried out using RF power supply (13.56 MHz) at power of 75 W for 10 and 40 min. The RF supply was coupled to the inductance through a matching network. The effect of plasma polymerization (surface grafting) on the degree of surface modification has been investigated. The chemical changes on the polymer backbone are followed from the results of Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), which show the peaks corresponding to the functional groups of the HEMA polymerized onto the silicon surface. The morphology of the modified surfaces has also been investigated using scanning electron microscopy (SEM) and atomic ...

2005-05-30

444

Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...

1989-03-01

445

Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties  

International Nuclear Information System (INIS)

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO_x) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO_x shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO_x nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO_x shell acts as an effective insulating layer. The ZnTe-SiO_x nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

2009-11-11

446

Characterization of 3D thermal neutron semiconductor detectors  

International Nuclear Information System (INIS)

Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties of 3D structures. Charge collection ...

2007-06-11

447

Annealing and diffusion characteristics of boron-through-oxide implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the ...

1991-01-01

448

Annealing and diffusion characteristics of boron-through-oxide implanted silicon  

International Nuclear Information System (INIS)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced ...

449

A detailed physical model for ion implant induced damage in silicon  

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated ...

1998-06-01

450

A detailed physical model for ion implant induced damage in silicon  

International Nuclear Information System (INIS)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the ...

1998-06-01

451

15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers  

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop ...

2005-11-01

452

Solid state diffusion in metal silicides  

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach ...

453

Transient enhanced diffusion in B/sup +/ and P/sup +/ implanted silicon  

International Nuclear Information System (INIS)

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

454

Thin-film UV detectors based on hydrogenated amorphous silicon and its alloys  

Energy Technology Data Exchange (ETDEWEB)

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

2001-05-16

455

The PAMELA space experiment: first year of operation  

Energy Technology Data Exchange (ETDEWEB)

On the 15th of June 2006 the PAMELA experiment, mounted on the Resurs DK1 satellite, was launched from the Baikonur cosmodrome and it has been collecting data since July 2006. PAMELA is a satellite-borne apparatus designed to study charged particles in the cosmic radiation, to investigate the nature of dark matter, measuring the cosmic-ray antiproton and positron spectra over the largest energy range ever achieved, and to search for antinuclei with unprecedented sensitivity. The apparatus comprises a time-of-flight system, a silicon-microstrip magnetic spectrometer, a silicon-tungsten electromagnetic calorimeter, an anticoincidence system, a shower tail catcher scintillator and a neutron detector. The combination of these devices allows charged particle identification over a wide energy range.

2008-05-15

456

Study on the solid state reaction between bilayered Pd/Au films and silicon substrates  

British Library Electronic Table of Contents (United Kingdom)

Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...

2006-01-01

457

Screen-printed Emitter-Wrap-Through solar cell with single step side selective emitter with 18.8% efficiency  

British Library Electronic Table of Contents (United Kingdom)

Abstract A fabrication process for Emitter-Wrap-Through solar cells on monocrystalline material with high quality gap passivation by wet thermal silicon dioxide is investigated. Masking and structuring steps are performed by screen-printing technology. Via-holes are created by an industrially applicable high-speed laser drilling process. The cell structure features a selective emitter structure fabricated in a single high temperature step: a highly doped emitter at the via-holes and the rear side, allowing for a low via-hole resistivity as well as a low resistivity contact to screen-printed pastes, and a moderately doped front side emitter exhibiting high quantum efficiency in the low wavelength range. Therefore a novel approach is applied depositing either doped or undoped PECVD silicon d...

2011-01-01

458

Real time study of the crystallization of aluminium-base icosahedral phases by neutron powder diffraction  

International Nuclear Information System (INIS)

The thermal transformation of Al-base icosahedral phases was studied in-situ by real time neutron powder diffraction. Different compositions have been selected in order to vary the initial phase morphology and change the neutron scattering contrast between species. Alloys with low silicon and large aluminium contents produce first the orthorhombic O-Al_6Mn modification. In alloys with larger silicon content, the #alpha#-AlMnSi cubic phase appears soon after the beginning of the transformation but is still preceeded by O-Al_6Mn. Depending on compositions, the crystallization of the icosahedral phase is controlled either by the diffusion of Al through its interface with the residual fcc aluminium or that of Si within the bulk. The results are discussed in the light of current structural models. (author) 40 refs., 14 figs., 3 tabs.

1987-01-01

459

Radiation hardening of integrated circuits technologies  

International Nuclear Information System (INIS)

The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological radiation hardening and no more system hardening.

460

Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC  

International Nuclear Information System (INIS)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

461

Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC  

British Library Electronic Table of Contents (United Kingdom)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

2009-01-01

462

Optimized pre-amorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on insulator  

International Nuclear Information System (INIS)

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

2008-12-01

463

Multi-Layer Inkjet Printed Contacts to Si  

Energy Technology Data Exchange (ETDEWEB)

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 deg C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 deg C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

2005-11-01

464

Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films  

Energy Technology Data Exchange (ETDEWEB)

Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

2000-01-01

465

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion  

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

2003-11-17

466

Hybrid insulator - the excellent post insulator for HVAC and HVDC power station  

Energy Technology Data Exchange (ETDEWEB)

A solid layer artificial pollution test was carried out to study the pollution performance of a new type of hybrid station post insulator used in suspension and tensile high voltage transmission lines. The structure of the separated silicone rubber shed and porcelain core hybrid insulator was shown. The new insulator showed excellent pollution performance under both HVAC and HVDC conditions. It also exhibited excellent aging performance in artificial aging tests. The mechanical strength of the hybrid insulator was also better than normal composite insulators. Another advantage revealed was the fact that separated silicone rubber sheds and porcelain core hybrid post insulators are easier to manufacture than normal porcelain post insulators and other hybrid insulators. 5 refs., 6 tabs., 1 fig.

1997-12-31

467

Fabrication of Dense -SiAlON Ceramics with ZrO2 Additions Via a Rapid Reaction-Bonding and Postsintering Route  

British Library Electronic Table of Contents (United Kingdom)

Rapid nitridation was used to fabricate reaction-bonded and postsintered -Si6-ZAlZOZN8-Z (Z=1) ceramics with monoclinic ZrO2 added to the starting powder. Thermo-gravimetric analysis revealed that the addition of ZrO2 reduced the starting temperature of the main nitridation reaction. Using a reaction-bonding route with heating rates of 5, 10, and 20C/min, to fabricate -SiAlON ceramics without ZrO2 resulted in unreacted silicon that bled out of the specimens and the Z=1 composition samples did not maintain the original green compact morphology. On the other hand, no such bleeding of melted silicon was observed for samples with ZrO2 additions and the samples following nitridation maintained the original green morphology. The microstructure and mechanical properties of samples produced by rap...

2011-01-01

468

Enhanced diffusion from interstitial trapping during solid-phase-epitaxial growth of silicon alloys. Draft  

Energy Technology Data Exchange (ETDEWEB)

During the recrystallization by solid-phase-epitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, we propose that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing.

1984-08-01

469

Enhanced diffusion from interstitial trapping during solid-phase-epitaxial growth of silicon alloys  

Energy Technology Data Exchange (ETDEWEB)

During the recrystallization by solid-phase-expitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +/- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, it is proposed that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing. 12 references, 6 figures.

1984-01-01

470

Electrical properties of focused-ion-beam boron-implanted silicon  

International Nuclear Information System (INIS)

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

471

Effect of different treatments on acid centers of very high silicon zeolites studied by ir spectroscopy  

Science.gov (United States)

Using the infrared spectroscopy method, we have studied the effect of thermal dehydration (under vacuum and in air) and treatment with water vapor on the acid centers of very high silicon zeolites of the ZSM type. We have shown that dehydration under vacuum and in air completely and irreversibly removes the OH groups at 1120/sup 0/K, while treatment with water vapor removes these groups at 770/sup 0/K. The Lewis acid centers of dehydrated zeolites (represented by two types of centers) are more heat-stable than the Bronsted acid centers, but the vapor treatment at 1020/sup 0/K leads to the disappearance of the Lewis acid centers. In this work, we discuss the reasons for destruction of the acid centers of the zeolites under different treatment conditions.

1986-08-01

472

Depth-profiling of vertical sidewall nanolayers on structured wafers by grazing incidence X-ray flourescence  

British Library Electronic Table of Contents (United Kingdom)

The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200?mm and 300?mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of ...

2008-01-01

473

Crystallisation of grain boundary phases in silicon nitride and sialon ceramics  

International Nuclear Information System (INIS)

A survey is presented of the principles and practice of tailoring sintering liquid composition and processing cycle to enable crystallisation of intergranular phases in silicon nitride and sialon ceramics. Critical features in sialon ceramics are the O/N balance in residual glasses and post-sintering heat-treatment temperatures to enable nucleation of either intermediate phases at constant composition or oxide phases with re-partitioning of non stoichiometric components in #beta#' or #alpha#' solid solutions. Crystallisation of disilicate phases in non-sialon compositions exemplifies a problem in control of polymorphs with differing atomic volumes. Crystallisation of intergranular phases has an influence mainly on high-temperature mechanical and environmental behaviour of these ceramics. (orig.).

1993-10-04

474

Cosmic ray antiproton/electron discrimination capability of the CAPRICE silicon-tungsten calorimeter using neural networks  

Energy Technology Data Exchange (ETDEWEB)

A data analysis based on an artificial neural network classifier is proposed to identify cosmic ray antiprotons detected with the CAPRICE silicon-tungsten imaging calorimeter against electron background in the energy range 1.2-4.0 GeV. A set of new physical variables, describing the events inside the calorimeter on the base of their different patterns, are introduced in order to discriminate between hadronic and electromagnetic showers. The ability of the artificial neural network classifier to perform a careful multidimensional analysis gives the possibility to identify antiprotons with an electron rejection 408{+-}85 (stat) at 95.0{+-}0.2 (stat)% of signal detection efficiency. The high accuracy achieved by this method improves substantially the efficiency in the evaluation of the cosmic ray antiproton spectrum. (orig.).

1996-11-01

475

Ceramic bearings for application to hard disc drives (HDD); HDD yo ceramic ball bearing  

Energy Technology Data Exchange (ETDEWEB)

Ceramic ball bearings of silicon nitride are used for hard disk drive (HDD) spindle motors, to increase seed, reliability and memory capacity of the HDDs. Silicon nitride ceramics have advantages of lightweight, high strength and hardness over the conventional steel for bearings, but is expensive. A new process of high cost performance has been developed for mass production of the small-size ceramic balls. The company plans to apply these bearings to higher devices, e.g., servers, for the time being, and to expand the applicable areas, e.g., common devices and other small-size motors. The ceramic bearings have been developed jointly with Koyo Seiko Co. Ltd. (translated by NEDO)

2000-03-01

476

Boron transient enhanced diffusion in heavily phosphorus doped silicon  

International Nuclear Information System (INIS)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

1996-12-02

477

Atomic scale simulations of arsenic ion implantation and annealing in silicon  

International Nuclear Information System (INIS)

We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.

2004-12-15

478

Anomalous enhanced diffusion and electrical activation of boron in silicon after rapid isothermal annealing  

International Nuclear Information System (INIS)

Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).

479

Analysis on anomalous degradation in silicon solar cell designed for space use  

Energy Technology Data Exchange (ETDEWEB)

Recently, we have found the anomalous degradation of electrical performance in silicon solar cells irradiated with charged particles in a high-fluence region. This anomalous phenomenon has two typical features, which are sudden-drop-down of electrical performances in a high-fluence region and slight recovery of the short circuit current I{sub SC} just before the sudden-drop-down. These features cannot be understood by a conventional model coming from the decrease of minority-carriers life-time. We introduce this anomalous degradation of the electrical performance in Si solar cells irradiated with electrons or protons. We also report the result of simulation for the fluence dependence of the I{sub SC}, and discuss the mechanism of this anomalous phenomenon. (author)

1997-03-01

480

Analysis of plasma treatment and vapor heat treatment for thin-film transistors by extracting trap densities at front and back interfaces  

International Nuclear Information System (INIS)

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.

2004-05-17

481

Aluminium Phosphide-Induced Esophageal Stricture Palliation with Polyflex Stent  

British Library Electronic Table of Contents (United Kingdom)

A 21-year-old woman developed midesophageal stricture two weeks after ingestion of aluminium phosphide (AlP) tablets. Aluminium phosphide is a lethal protoplasmic toxin and is also the most common cause of suicidal poisoning in northern India. Upper gastrointestinal endoscopy (UGIE) showed a tight esophageal stricture 29?cm from the incisors with a circumferential ulcer. Dilatation up to 17?mm was done using Savary-Gilliard dilators. She had repeated dilatations three times at nearly two-week intervals. In view of the resistant stricture, a silicone Polyflex stent was placed across the stricture and removed after 3?months; there was no recurrence of stricture even after three months of follow-up. Patients with recurrent esophageal stricture and those with fistula may benefit from silicone ...

2008-01-01

482

A phenomenological model for the macroscopic characteristics of irradiated silicon  

International Nuclear Information System (INIS)

The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.

483

A nanosized silicon thin film as high capacity anode material for Li-ion rechargeable batteries  

Energy Technology Data Exchange (ETDEWEB)

Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.

2006-07-15

484

A Combinatorial Library of Micro-Topographies and Chemical Compositions for Tailored Surface Wettability  

British Library Electronic Table of Contents (United Kingdom)

Abstract Surface modification of topography and chemistry in order to achieve a specific water contact angle (CA) has been explored by using a novel combinatorial screening platform. The screening arrays consisted of 507 distinct combinations of micro-topographies and chemical compositions. By performing chemical modifications with 1H, 1H, 2H, 2H perfluoroethyltriethoxy-silane (PFS) and n-octadecyltriethoxysilane (ODS) on standard silicon wafers it was possible to include both superhydrophobic and very hydrophilic pad arrays in the same screening platform. Surfaces modified with PFS were more hydrophobic than surfaces modified with ODS, while the unmodified silicon surfaces were hydrophilic. For the PFS modified surfaces the largest CAs were achieved with a small pillar size of X-=-1-m and...

2011-01-01

485

Use of genetic parameters in coal classification  

Science.gov (United States)

The extensive reserves of mined coal types, their great variety and the complexity of the composition and properties, as well as their important role as an energy fuel and industrial feedstock, cause one to give special attention to their classification. Of course, one of the principal fields of technological processing of coal is coking. In addition to the production of blast furnace coke, in the future specialized plants will be developed for production of coke and other carbonized materials for non-blast-furnace processes (electrothermal processes, production of calcium carbide, ferroalloys, zinc, yellow phosphorus, copper, etc.). One important area is new nonfuel uses, including a number of processes for processing of coal feedstocks to obtain a wide range of carbonaceous materials (coal-graphite products, carbon black, adsorbents, etc.), liquid fuels, and chemical products. In choosing a given area of coal utilization a determining factor is the ...

1984-01-01

486

Thermal spraying of reactive materials to form wear-resistant composite coatings  

Energy Technology Data Exchange (ETDEWEB)

The dispersion of more than 20 vol pct submicrometer ceramic particles within a metallic matrix and the deposition of such a cermet to form a thick and tough coating presents problems. Most of the coating techniques have failed in attempting to homogeneously disperse very fine and hard particles in large amounts while avoiding their decomposition or reaction with the metal matrix during the deposition process. A simple and efficient method has been developed for producing ceramic-containing composite coatings. It consists in synthesizing cermet-based materials and in depositing them by a rapid solidification process, such as thermal spraying. Boride- and carbide-based materials have been successfully obtained by plasma spraying reactive powders comprising the basic reagents. These materials, with a microstructure of submicrometer ceramic particles dispersed in a metallic matrix, exhibit good wear-resistant properties (abrasion and sliding wear). Finally, reactive ...

1992-03-01

487

The nanostructure and microstructure of steels: Electrochemical Tafel behaviour and atomic force microscopy  

International Nuclear Information System (INIS)

The influence of chemical composition and heat treatment on a low-carbon steel, chromium steel and high speed steel has been examined by polarisation curves and electrochemical parameters deduced from the Tafel plots. The electrochemical corrosion resistance, which is small between the as-received steels become greater after heat treatment, following the order: carbon steel < chromium steel #approx# high speed steel. To explain these differences, the nano- and microstructure of the steels has been characterized by the ex situ techniques of atomic force microscopy and optical microscopy, before and after surface etching with Nital (a solution of 5% HNO_3 in ethanol). This causes preferential attack of the ferrite phases showing the carbide phases more clearly. From these nanostructural studies it was possible to better understand why the passive films formed on chromium steel and high speed steel have superior protective properties to those formed on carbon ...

2005-12-01

488

Stress corrosion cracking of type 304L stainless steel core shroud welds.  

Energy Technology Data Exchange (ETDEWEB)

Microstructural analyses by advanced metallographic techniques were conducted on mockup welds and a cracked BWR core shroud weld fabricated from Type 304L stainless steel. heat-affected zones of the shroud weld and mockup shielded-metal-arc welds were free of grain-boundary carbide, martensite, delta ferrite, or Cr depletion near grain boundaries. However, as a result of exposure to welding fumes, the heat-affected zones of the welds were significantly contaminated by fluorine and oxygen which migrate to grain boundaries. Significant oxygen contamination promotes fluorine contamination and suppresses classical thermal sensitization, even in Type 304 steels. Results of slow-strain-rate tensile tests indicate that fluorine exacerbates the susceptibility of irradiated steels to intergranular stress corrosion cracking. These observations, combined with previous reports on the strong influence of weld flux, indicate that oxygen and fluorine contamination and ...

1999-10-26

489

Stress corrosion cracking of austenitic stainless steel core internal welds.  

Energy Technology Data Exchange (ETDEWEB)

Microstructural analyses by several advanced metallographic techniques were conducted on austenitic stainless steel mockup and core shroud welds that had cracked in boiling water reactors. Contrary to previous beliefs, heat-affected zones of the cracked Type 304L, as well as 304 SS core shroud welds and mockup shielded-metal-arc welds, were free of grain-boundary carbides, which shows that core shroud failure cannot be explained by classical intergranular stress corrosion cracking. Neither martensite nor delta-ferrite films were present on the grain boundaries. However, as a result of exposure to welding fumes, the heat-affected zones of the core shroud welds were significantly contaminated by oxygen and fluorine, which migrate to grain boundaries. Significant oxygen contamination seems to promote fluorine contamination and suppress thermal sensitization. Results of slow-strain-rate tensile tests also indicate that fluorine exacerbates the susceptibility of ...

1999-04-14

490

Post-machining thermal treatment after surface finishing of hardened steels: Kinetics of XRD line width reduction and improvement in rolling contact lifetime under mixed friction conditions  

Energy Technology Data Exchange (ETDEWEB)

Hard surface finishing represents the final manufacturing step for functional areas of machine elements in state-of-the-art production. Raceways of rolling bearing rings are ground and honed to the required low roughness. Plastic deformation is restricted to a narrow edge zone of the hardened steel. Reheating of the machined components below the martensite tempering or bainite transformation temperature results in a marked decrease of the XRD line width on the surface. The investigated samples are made of through-hardened standard bearing steel 100Cr6 (international denotation: SAE 52100). On the basis of a material model that explains the effect as a complex diffusion process of dislocational carbon segregation, i.e. static strain aging, the measured kinetics of the XRD line width reduction is simulated by an Arrhenius-type equation, which describes the rate-controlling reaction step of temper carbide dissolution. The formation of a small white-etching surface ...

2008-07-01

491

Oscillating line travel pipe cleaning machine  

Energy Technology Data Exchange (ETDEWEB)

A major problem in the maintenance and rehabilitation of pipelines is the removal of the original coating system, particularly in cases where the coating contains sticky components or adhesives. It has been found that such coatings can be removed by use of a cleaning machine with a plurality of counter-rotating carbide-tipped tools mounted to an oscillating head embracing the pipe, and which is operable at the same time to travel along the length of the pipe. Such a machine can be designed to effect a positive, gentle milling operation on the pipe surface to remove the coating efficiently and at relatively low power consumption. A particular advantage of the pipe cleaning machine of the invention is that its design and manner of operation allows it to be used in the field to clean an uncovered section of pipeline, for example a natural gas pipeline, without the requirement of removing the pipeline section from the ditch in which it is seated. The machine of the ...

1992-04-28

492

Nanosized copper ferrite materials: Mechanochemical synthesis and characterization  

International Nuclear Information System (INIS)

Nanodimensional powders of cubic copper ferrite are synthesized by two-steps procedure of co-precipitation of copper and iron hydroxide carbonates, followed by mechanochemical treatment. X-ray powder diffraction, Moessbauer spectroscopy and temperature-programmed reduction are used for the characterization of the obtained materials. Their catalytic behavior is tested in methanol decomposition to hydrogen and CO and total oxidation of toluene. Formation of nanosized ferrite material is registered even after one hour of milling time. It is established that the prolonging of treatment procedure decreases the dispersion of the obtained product with the appearance of Fe2O3. It is demonstrated that the catalytic behavior of the samples depends not only on their initial phase composition, but on the concomitant ferrite phase transformations by the influence of the reaction medium. -- Graphical abstract: It is demonstrated that the catalytic behavior of the obtained copper ferrites depends not ...

2011-05-01

493

Microstructural aspects of the corrosion of Alloy 800  

Energy Technology Data Exchange (ETDEWEB)

Transmission electron microscopy studies on solution-annealed Alloy 800 revealed small (100-200 nm), spherical-shaped titanium carbide (face centered cubic structure) and large (200 nm-5 {mu}m), faceted titanium nitride (hexagonal structure) particles randomly distributed in the austenite matrix. The volume fraction of former particles was found to be greater than that of the latter. Corrosion studies of the alloy in acidic, chlorides and acidic chloride environments at room temperature indicated that the passivity of Alloy 800 was adversely affected by the addition Cl{sup -} ions. X-ray photoelectron spectroscopy revealed that the surface film formed on the alloy at the onset of passivity consisted of Cr{sup 3+} (as Cr{sub 2}O{sub 3}), without any Fe{sup 3+}/Fe{sup 2+} or Ni{sup 2+}. Scanning electron microscopy studies indicated initiation of pitting at large, faceted particles, not at small, spherical-shaped ones.

2004-12-01

494

Irradiation hardening of reduced activation martensitic steels  

International Nuclear Information System (INIS)

Irradiation response on the tensile properties of 9Cr-2W steels has been investigated following FFTF/MOTA irradiations at temperatures between 646 and 873 K up to doses between 10 and 59 dpa. The largest irradiation hardening accompanied by the largest decrease in the elongation is observed for the specimens irradiated at 646 K at doses between 10 and 15 dpa. The irradiation hardening appears to saturate at a dose of around 10 dpa at the irradiation temperature. No hardening but softening was observed in the specimens irradiated at above 703 K to doses of 40 and 59 dpa. Microstructural observation by transmission electron microscope (TEM) revealed that the dislocation loops with the a left angle 100 right angle type Burgers vector and small precipitates which were identified to be M_6C type carbides existed after the irradiation at below 703 K. As for the void formation, the average size of voids increased with increasing irradiation temperature from 646 to 703 K. ...

495

High temperature strengthening mechanism of hafnium carbide in a tungsten-rhenium matrix  

Energy Technology Data Exchange (ETDEWEB)

The interrelationship between the testing temperature and HfC strength increment of an arc-melted W-3.6Re-0.4HfC was determined from 1950 K to 2980 K in a vacuum of better than 1.3{times}10{sup {minus}5} Pa (10{sup {minus}7} torr). The present research was focused on the characteristic temperature at which the rapid coarsening of HfC particles occurred and the effect of the second-phase particle size on the high temperature strength properties of this material. It was found that the HfC particle strengthening was effective in a W-Re matrix up to a characteristic temperature of 2450 K in the short-term tensile test. Carbon was found to be the rate-limiting solute in the HfC particle growth. The strength of HfC strengthened alloy at temperature above 0.5 T{sub m} is proportional to the square root of particle volume fraction. The yield strengths of W-3.6Re-0.26HfC calculated based on the particle statistical distribution had good agreement with the experimental values from 1950 K to 2980 ...

1991-01-01

496

High temperature strengthening mechanism of hafnium carbide in a tungsten-rhenium matrix  

International Nuclear Information System (INIS)

The interrelationship between the testing temperature and HfC strength increment of an arc-melted W-3.6Re-0.4HfC was determined from 1950 K to 2980 K in a vacuum of better than 1.3x10"-"5 Pa (10"-"7 torr). The present research was focused on the characteristic temperature at which the rapid coarsening of HfC particles occurred and the effect of the second-phase particle size on the high temperature strength properties of this material. It was found that the HfC particle strengthening was effective in a W-Re matrix up to a characteristic temperature of 2450 K in the short-term tensile test. Carbon was found to be the rate-limiting solute in the HfC particle growth. The strength of HfC strengthened alloy at temperature above 0.5 T_m is proportional to the square root of particle volume fraction. The yield strengths of W-3.6Re-0.26HfC calculated based on the particle statistical distribution had good agreement with the experimental values from 1950 K to 2980 K. Besides, an addition of ...

1991-01-06

497

Fracture behavior of heat-affected zone in low alloy steels  

International Nuclear Information System (INIS)

Past elastic-plastic fracture studies for leak-before-break (LBB) assessment of low alloy steel pipings have been focused mostly on the behavior of base metals and their weld metals. In contrast, the heat-affected zone (HAZ) of a welded pipe has not been studied in detail primarily because the size of the HAZ is too small to make specimens for mechanical properties measurements. In this study, microstructural analyses, microhardness tests, tensile tests and J-R tests have been conducted as a function of distance from a fusion line and temperature for HAZ materials of SA106Gr.C low alloy piping steels. For the ferrite-pearlite steels such as SA106Gr.C, the HAZ specimens showed a higher yield strength and fracture toughness compared with those of its base metal. These characteristics, despite of grain coarsening, can be explained by cleaner microstructures of HAZ materials with a finer morphology of carbides compared with pearlitic-ferritic base metals. However, the ...

2001-11-01

498

Flow behaviour and microstructure of the heat-resistant steels X20CrMoV12.1 and X5NiCrTiAl32.20 (alloy 800)  

Energy Technology Data Exchange (ETDEWEB)

Flow-curve characteristics of the heat-resistant steels X 20 CrMoV 12.1 and alloy 800 (X5NiCrTiAl32.20) were measured by tensile and compression tests at temperatures between room temperature and 800 C and strain rates {epsilon}{<=}10 s{sup -1} in connection with microstructure investigations (dislocation content, carbide precipitation) by TEM and X-ray diffraction analysis (XDA). Modelling the deformation behaviour of the steels in terms of the microstructure development indicates that it cannot be explained in a simple manner. The flow curves {sigma}={sigma}({epsilon}, {epsilon}, T) lie, in general, between those predicted by the Kocks-Mecking-Estrin model and a modified (i.e. two-parameter) Roberts model. Because of the less complicated nature of the deformation process the correspondence of experiment and modelling is more satisfying in the case of the material X 20 CrMoV 12.1. (orig.) 26 refs.

1999-10-01

499

Development of a new wear-resistant material: TiC/TiNi composite  

Energy Technology Data Exchange (ETDEWEB)

In this work, an attempt was made to develop a novel type of wear-resistant composite employing a TiNi alloy matrix reinforced by hard particles. Titanium carbide was chosen as the reinforcing phase because of its high hardness and TiNi alloy as the matrix due to its pseudoelasticity and good toughness. TiC particles may sustain external load, while the TiNi matrix may accommodate deformation, absorb impact energy and retain the hard particles. Such a combination is expected to lead to an enhanced wear resistance, compared to TiNi alloy. As a matter of fact, some efforts were previously made to develop TiNi-matrix composite reinforced by ceramic particles. However, the emphasis of those studies was put on effects of the reinforcing particles on the phase transformation behavior, shape memory effect and some mechanical properties of the composite; no attempt was made to explore the potential benefit of the material for wear application.

1999-10-22

500

Correlation of mechanical properties with microstructure of Alloy 800 after annealing at 800 - 1000 "0C  

International Nuclear Information System (INIS)

The microstructures of so called high temperature alloys, which have been developed for service temperatures up to 800"0C, are not necessarily stable at higher temperatures. The mobility of alloying elements is very high in FeCrNi alloys at 950 "0C e.g. iron, chromium or nickel can diffuse up to 0.1 mm distance in one year, which is about a grain diameter. Interstitials like carbon or nitrogen show a four orders of magnitude higher diffusivity than the alloying elements. In addition, the carbon solubility in this type of alloy is reported to be very low. Therefore the alloys are supersaturated with carbon after heat treatment above 1100 "0C and water quenching although the absolute carbon content is very low. At service temperatures around 800"0C the solubility of carbon is still about one order of magnitude lower than at heat treatment temperature. This will lead, together with the high mobility of elements, to precipitation of carbides even after short times and ...

1981-05-01