An in situ vapour phase hydrothermal surface doping approach for fabrication of high performance Co3O4 electrocatalysts with an exceptionally high S-doped active surface.

Science.gov (United States)

Tan, Zhijin; Liu, Porun; Zhang, Haimin; Wang, Yun; Al-Mamun, Mohammad; Yang, Hua Gui; Wang, Dan; Tang, Zhiyong; Zhao, Huijun

2015-04-04

A facile in situ vapour phase hydrothermal (VPH) surface doping approach has been developed for fabrication of high performance S-doped Co3O4 electrocatalysts with an unprecedentedly high surface S content (>47%). The demonstrated VPH doping approach could be useful for enrichment of surface active sites for other metal oxide electrocatalysts.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

Science.gov (United States)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

High spatial resolution gamma imaging detector based on a 5 inch diameter R3292 Hamamatsu PSPMT

International Nuclear Information System (INIS)

Wojcik, R.; Majewski, S.; Kross, B.; Weisenberger, A.G.; Steinbach, D.

1998-01-01

High resolution imaging gamma-ray detectors were developed using Hamamatsu's 5 inch diameter R3292 position sensitive PMT (PSPMT) and a variety of crystal scintillator arrays. Special readout techniques were used to maximize the active imaging area while reducing the number of readout channels. Spatial resolutions approaching 1 mm were obtained in a broad energy range from 20 to 511 keV. Results are also presented of coupling the scintillator arrays to the PMT via imaging light guides consisting of acrylic optical fibers

Doped titanium dioxide nanocrystalline powders with high photocatalytic activity

International Nuclear Information System (INIS)

Castro, A.L.; Nunes, M.R.; Carvalho, M.D.; Ferreira, L.P.; Jumas, J.-C.; Costa, F.M.; Florencio, M.H.

2009-01-01

Doped titanium dioxide nanopowders (M:TiO 2 ; M=Fe, Co, Nb, Sb) with anatase structure were successfully synthesized through an hydrothermal route preceded by a precipitation doping step. Structural and morphological characterizations were performed by powder XRD and TEM. Thermodynamic stability studies allowed to conclude that the anatase structure is highly stable for all doped TiO 2 prepared compounds. The photocatalytic efficiency of the synthesized nanopowders was tested and the results showed an appreciable enhancement in the photoactivity of the Sb:TiO 2 and Nb:TiO 2 , whereas no photocatalytic activity was detected for the Fe:TiO 2 and Co:TiO 2 nanopowders. These results were correlated to the doping ions oxidation states, determined by Moessbauer spectroscopy and magnetization data. - Graphical abstract: Doped titanium dioxide nanopowders (M:TiO 2 ; M=Fe, Co, Nb, Sb) with highly stable anatase structure were successfully synthesized through an hydrothermal route. The photocatalytic efficiencies of the synthesized nanopowders were tested and the results show an appreciable enhancement in the photoactivity of the Sb:TiO 2 and Nb:TiO 2 .

Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

NARCIS (Netherlands)

Macco, B.; Knoops, H.C.M.; Verheijen, M.A.; Beyer, W.; Creatore, M.; Kessels, W.M.M.

2017-01-01

In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

Science.gov (United States)

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advances in highly doped upconversion nanoparticles.

Science.gov (United States)

Wen, Shihui; Zhou, Jiajia; Zheng, Kezhi; Bednarkiewicz, Artur; Liu, Xiaogang; Jin, Dayong

2018-06-20

Lanthanide-doped upconversion nanoparticles (UCNPs) are capable of converting near-infra-red excitation into visible and ultraviolet emission. Their unique optical properties have advanced a broad range of applications, such as fluorescent microscopy, deep-tissue bioimaging, nanomedicine, optogenetics, security labelling and volumetric display. However, the constraint of concentration quenching on upconversion luminescence has hampered the nanoscience community to develop bright UCNPs with a large number of dopants. This review surveys recent advances in developing highly doped UCNPs, highlights the strategies that bypass the concentration quenching effect, and discusses new optical properties as well as emerging applications enabled by these nanoparticles.

On the role of doping in High-Tc superconductors

International Nuclear Information System (INIS)

Mei, C.; Smith, V.H. Jr.

1994-01-01

High-T c superconductors (HTSCS) are usually obtained by doping electron donors or acceptors into parent materials. The actual role played by doping is still uncertain with various interpretations. The present electronic structure study provides some hints which may help to solve the mystery

Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

International Nuclear Information System (INIS)

Parker, David; Singh, David J

2012-01-01

We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

Effect of Boron Doping on High-Resolution X-Ray Diffraction Metrology

Science.gov (United States)

Faheem, M.; Zhang, Y.; Dai, X.

2018-03-01

The effect of boron (B) doping on high-resolution X-ray diffraction (HXRD) metrology has been investigated. Twelve samples of Si1-xGex films were epitaxially grown on Si (100) substrates with different thicknesses, germanium (Ge) concentrations and with/without B dopants. Secondary ion mass spectroscopy (SIMS) and HXRD were employed for measurements of B doping, Ge concentration, strain, and thickness of the layers. The SIMS results show the absence of B in two samples while the rest of the samples have B doping in the range of 8.40 × 1018-8.7 × 1020 atoms/cm3 with Ge concentration of 13.3-55.2 at.%. The HXRD measurements indicate the layers thickness of 7.07-108.13 nm along with Ge concentration of 12.82-49.09 at.%. The difference in the Ge concentration measured by SIMS and HXRD was found to deend on B doping. For the undoped samples, the difference is 0.5 at.% and increases with B doping but with no linear proportionality. The difference in the Ge concentration was 7.11 at.% for the highly B-doped (8.7 × 1020 atoms/cm3) sample. The B doping influences the Si1-xGex structure, causing a change in the lattice parameter and producing tensile strains shifting Si1-xGex peaks towards Si (100) substrate peaks in the HXRD diffraction patterns. As a result, Vegard's law is no longer effective and makes a high impact on the HXRD measurement. The comparison between symmetric (004) and asymmetric (+113, +224) reciprocal space mappings (RSM) showed a slight difference in Ge concentration between the undoped and lower B-doped samples. However, there is a change of 0.21 at.% observed for the highly doped Si1-xGex samples. RSM's (+113) demonstrate the small SiGe peak broadening as B doping increases, which indicates a minor crystal distortion.

Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

Energy Technology Data Exchange (ETDEWEB)

Jiang Baojiang [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Tian Chungui; Wang Lei; Sun Li; Chen Chen; Nong Xiaozhen [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Qiao Yingjie, E-mail: qiaoyingjie@hrbeu.edu.cn [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Fu Honggang, E-mail: fuhg@vip.sina.com [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China)

2012-02-01

In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 Degree-Sign C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

Science.gov (United States)

Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang

2012-02-01

In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

High-Level Heteroatom Doped Two-Dimensional Carbon Architectures for Highly Efficient Lithium-Ion Storage

Directory of Open Access Journals (Sweden)

Zhijie Wang

2018-04-01

Full Text Available In this work, high-level heteroatom doped two-dimensional hierarchical carbon architectures (H-2D-HCA are developed for highly efficient Li-ion storage applications. The achieved H-2D-HCA possesses a hierarchical 2D morphology consisting of tiny carbon nanosheets vertically grown on carbon nanoplates and containing a hierarchical porosity with multiscale pore size. More importantly, the H-2D-HCA shows abundant heteroatom functionality, with sulfur (S doping of 0.9% and nitrogen (N doping of as high as 15.5%, in which the electrochemically active N accounts for 84% of total N heteroatoms. In addition, the H-2D-HCA also has an expanded interlayer distance of 0.368 nm. When used as lithium-ion battery anodes, it shows excellent Li-ion storage performance. Even at a high current density of 5 A g−1, it still delivers a high discharge capacity of 329 mA h g−1 after 1,000 cycles. First principle calculations verifies that such unique microstructure characteristics and high-level heteroatom doping nature can enhance Li adsorption stability, electronic conductivity and Li diffusion mobility of carbon nanomaterials. Therefore, the H-2D-HCA could be promising candidates for next-generation LIB anodes.

Doping effects in high-Tc superconductors

International Nuclear Information System (INIS)

Hessel Andersen, N.

1996-11-01

The purpose of the project has been to study how the superconducting and magnetic properties of the high temperature superconductors change as function of oxygen stoichiometry and cation doping. The primary system of investigation has been YBa 2 Cu 3 O 6+x , which has been studied as function of oxygen stoichiometry, 0 2 planes, that is necessary for superconductivity, is strongly depending on structural ordering. The static properties and the kinetics of the structural ordering process have been studied experimentally by neutron and high energy synchrotron x-ray diffraction, by Raman scattering, and by computer simulation technique. Not only the oxygen stoichiometry but also the cation doping has been shown to influence the magnetic phases, in some cases in an unexpected manner. Thus, by neutron diffraction experiments it has been shown that doping with non-magnetic Al gives rise to a new magnetic phase. A theoretical model, has been developed. The magnetic phases of the Cu and Nd ordering in NdBa 2 Cu 3 O 6+x , and of the Cu and Pr ordering in PrBa 2 Cu 3 O 6+x have been studied by neutron diffraction with the main purpose of understanding why PrBa 2 Cu 3 O 6+x is magnetic and non-superconducting for all oxygen stoichiometries. In NdBa:2Cu 3 O 6+x studies of the magnetic flux lattice have been carried out by Small Angle Neutron Scattering. Additional structural studies of the superconducting and magnetic phases of related materials, of RENi 2 B 2 C (RE = rare earth), and of oxidized and cation doped materials based on La 2 CuO 4+δ have been carried out. Methods for structural studies and analyses, and equipment for electrical and magnetic characterization have been developed. (EG) 5 tabs., 46 ills., 35 refs

[Doping. High-tech cheating in sport].

Science.gov (United States)

Striegel, H; Simon, P

2007-07-01

Today, doping is no longer limited to the classical drugs with well known effects and side effects. Older generation anabolic steroids are used mainly in fitness and recreational sports. In contrast, due to doping tests, substances used in competitive sports include peptide hormones, medications not yet approved, and even specially developed drugs, such as designer steroids. Of the peptide hormones, particularly growth hormones (human growth hormone), erythropoietin and generics, insulin, and presumably insulin-like growth factor 1 are used. Substance groups potentially relevant for doping are selective androgen receptor modulators and gene therapy drugs. For most of these, there is no knowledge about side effects in healthy individuals, and no adequate doping tests. Therefore, anti-doping measures cannot rely solely on the continual improvement of doping analyses, but should include increased measures for doping prevention. Not only sports organizations, but also governmental agencies should be involved in developing and implementing these measures.

Heavy doping effects in high efficiency silicon solar cells

Science.gov (United States)

Lindholm, F. A.; Neugroschel, A.

1986-01-01

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Preparation and spectroscopic properties of Yb-doped and Yb-Al-codoped high silica glasses

International Nuclear Information System (INIS)

Qiao Yanbo; Wen Lei; Wu Botao; Ren Jinjun; Chen Danping; Qiu Jianrong

2008-01-01

Yb-doped and Yb-Al-codoped high silica glasses have been prepared by sintering nanoporous glasses. The absorption, fluorescent spectra and fluorescent lifetimes have been measured and the emission cross-section and minimum pump intensities were calculated. Codoping aluminum ions enhanced the fluorescence intensity of Yb-doped high silica glass obviously. The emission cross-sections of Yb-doped and Yb-Al-codoped high silica glasses were 0.65 and 0.82 pm 2 , respectively. The results show that Yb-Al-codoped high silica glass has better spectroscopic properties for a laser material. The study of high silica glass doped with ytterbium is helpful for its application in Yb laser systems, especially for high-power and high-repetition lasers

High temperature compression tests performed on doped fuels

International Nuclear Information System (INIS)

Duguay, C.; Mocellin, A.; Dehaudt, P.; Fantozzi, G.

1997-01-01

The use of additives of corundum structure M 2 O 3 (M=Cr, Al) is an effective way of promoting grain growth of uranium dioxide. The high-temperature compressive deformation of large-grained UO 2 doped with these oxides has been investigated and compared with that of pure UO 2 with a standard microstructure. Such doped fuels are expected to exhibit enhanced plasticity. Their use would therefore reduce the pellet-cladding mechanical interaction and thus improve the performances of the nuclear fuel. (orig.)

Highly improved sensibility and selectivity ethanol sensor of mesoporous Fe-doped NiO nanowires

Science.gov (United States)

Li, X. Q.; Wei, J. Q.; Xu, J. C.; Jin, H. X.; Jin, D. F.; Peng, X. L.; Hong, B.; Li, J.; Yang, Y. T.; Ge, H. L.; Wang, Xinqing

2017-12-01

In this paper, nickel oxides (NiO) and iron (Fe)-doped NiO nanowires (NWs) with the various doping content (from 1 to 9 at%) were synthesized by using SBA-15 templates with the nanocasting method. All samples were synthesized in the same conditions and exhibited the same mesoporous-structures, uniform diameter, and defects. Mesoporous-structures with high surface area created more active sites for the adsorption of oxygen on the surface of all samples, resulting in the smaller surface resistance in air. The impurity energy levels from the donor Fe-doping provided electrons to neutralize the holes of p-type Fe-doped NiO NWs, which greatly enhanced the total resistance. The comparative gas-sensing study between NiO NWs and Fe-doped NiO NWs indicated that the high-valence donor Fe-doping obviously improved the ethanol sensitivity and selectivity for Fe-doped NiO NWs. And Ni0.94Fe0.06O1.03 NWs sensor presented the highest sensitivity of 14.30 toward ethanol gas at 320 °C for the high-valence metal-doping.

High-performace cladding-pumped erbium-doped fibre laser and amplifier

International Nuclear Information System (INIS)

Kotov, L V; Likhachev, M E; Bubnov, M M; Medvedkov, O I; Lipatov, D S; Vechkanov, N N; Guryanov, Aleksei N

2012-01-01

We report cladding-pumped erbium-doped fibre laser and amplifier configurations. Through fibre design optimisation, we have achieved a record-high laser slope efficiency, 40 % with respect to absorbed pump power (λ = 976 nm), and an output power of 7.5 W. The erbium-doped fibre amplifier efficiency reaches 32 %.

Recent developments in high charge state heavy ion beams at the LBL 88-inch Cyclotron

International Nuclear Information System (INIS)

Gough, R.A.; Clark, D.J.; Glasgow, L.R.

1978-01-01

Recent advances in design and operation of the internal PIG sources at the LBL 88-Inch Cyclotron have led to the development of high charge state (0.4 16 O 8+ . Total external intensities of these beams range from 10 12 particles/s for 6 Li 3+ to 0.1 particles/s for 16 O 8+ . Techniques have been developed for routine tune-out of the low intensity beams. These include use of model beams and reliance on the large systematic data base of cyclotron parameters which has been developed over many years of operation. Techniques for delivery of these weak beams to the experimental target areas are presented. Source design and operation, including special problems associated with Li, Be, and B beams are discussed

Highly n -doped graphene generated through intercalated terbium atoms

Science.gov (United States)

Daukiya, L.; Nair, M. N.; Hajjar-Garreau, S.; Vonau, F.; Aubel, D.; Bubendorff, J. L.; Cranney, M.; Denys, E.; Florentin, A.; Reiter, G.; Simon, L.

2018-01-01

We obtained highly n -type doped graphene by intercalating terbium atoms between graphene and SiC(0001) through appropriate annealing in ultrahigh vacuum. After terbium intercalation angle-resolved-photoelectron spectroscopy (ARPES) showed a drastic change in the band structure around the K points of the Brillouin zone: the well-known conical dispersion band of a graphene monolayer was superposed by a second conical dispersion band of a graphene monolayer with an electron density reaching 1015cm-2 . In addition, we demonstrate that atom intercalation proceeds either below the buffer layer or between the buffer layer and the monolayer graphene. The intercalation of terbium below a pure buffer layer led to the formation of a highly n -doped graphene monolayer decoupled from the SiC substrate, as evidenced by ARPES and x-ray photoelectron spectroscopy measurements. The band structure of this highly n -doped monolayer graphene showed a kink (a deviation from the linear dispersion of the Dirac cone), which has been associated with an electron-phonon coupling constant one order of magnitude larger than those usually obtained for graphene with intercalated alkali metals.

Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

Science.gov (United States)

Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

The 52-inch last-stage blades for steam turbines

International Nuclear Information System (INIS)

Suzuki, Atsuhide; Hisa, Shoichi; Nagao, Shin-ichiro; Ogata, Hisao

1986-01-01

The last-stage blades (LSB) of steam turbines are one of the most important components determining the plant's maximum capacity and efficiency. The development of LSBs necessitates high-technology including advanced methods of analyses and verifications as well as ample accumulation of technical data. The 52-inch LSB recently developed by Toshiba has raised nuclear power plant's capacity up to 1,300 ∼ 1,800 MW, has effected compact design of turbine units, and has improved thermal efficiency, keeping high reliability. (author)

Ultrabroadband terahertz conductivity of highly doped ZnO and ITO

DEFF Research Database (Denmark)

Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

2015-01-01

The broadband complex conductivities of transparent conducting oxides (TCO), namely aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by terahertz time domain spectroscopy (THz-TDS) in the frequency range from 0.5 to 18 THz using air...... to be more thickness dependent than GZO and ITO, indicating high importance of the surface states for electron dynamics in AZO. Finally, we measure the transmittance of the TCO films from 10 to 200 THz with Fourier transform infrared spectroscopy (FTIR) measurements, thus closing the gap between THz...

Nitrogen-doped porous carbon derived from biomass waste for high-performance supercapacitor.

Science.gov (United States)

Ma, Guofu; Yang, Qian; Sun, Kanjun; Peng, Hui; Ran, Feitian; Zhao, Xiaolong; Lei, Ziqiang

2015-12-01

High capacitance property and low cost are the pivotal requirements for practical application of supercapacitor. In this paper, a low cost and high capacitance property nitrogen-doped porous carbon with high specific capacitance is prepared. The as-prepared nitrogen-doped porous carbon employing potato waste residue (PWR) as the carbon source, zinc chloride (ZnCl2) as the activating agent and melamine as nitrogen doping agent. The morphology and structure of the carbon materials are studied by scanning electron microscopy (SEM), N2 adsorption/desorption, X-ray diffraction (XRD) and Raman spectra. The surface area of the nitrogen-doped carbon which prepared under 700°C is found to be 1052m(2)/g, and the specific capacitance as high as 255Fg(-1) in 2M KOH electrolyte is obtained utilize the carbon as electrode materials. The electrode materials also show excellent cyclability with 93.7% coulombic efficiency at 5Ag(-1) current density of for 5000cycles. Copyright © 2015 Elsevier Ltd. All rights reserved.

Risk assessment of K Basin twelve-inch and four-inch drain valve failure from a postulated seismic initiating event

Energy Technology Data Exchange (ETDEWEB)

MORGAN, R.G.

1999-06-23

The Spent Nuclear Fuel (SNF) Project will transfer metallic SNF from the Hanford 105 K-East and 105 K-West Basins to safe interim storage in the Canister Storage Building in the 200 Area. The initial basis for design, fabrication, installation, and operation of the fuel removal systems was that the basin leak rate which could result from a postulated accident condition would not be excessive relative to reasonable recovery operations. However, an additional potential K Basin water leak path is through the K Basin drain valves. Three twelve-inch drain valves are located in the main basin bays along the north wall. Five four-inch drain valves are located in the north and south loadout pits (NLOP and SLOP), the weasel pit, the technical viewing pit, and the discharge chute pit. The sumps containing the valves are filled with concrete which covers the drain valve body. Visual observations indicate that only the valve's bonnet and stem are exposed above the basin concrete floor for the twelve-inch drain valve and that much less of the valve's bonnet and stem are exposed above the basin concrete floor for the five four-inch drain valves. It was recognized, however, that damage of the drain valve bonnet or stem during a seismic initiating event could provide a potential K Basin water leak path. The objectives of this analysis are to: (1) evaluate the likelihood of damaging the three twelve-inch drain valves located along the north wall of the main basin and the five four-inch drain valves located in the pits from a seismic initiating event, and (2) determine the likelihood of exceeding a specific consequence (initial leak rate) from a damaged valve. The analysis process is a risk-based uncertainty analysis where each variable is modeled using available information and engineering judgement. The uncertainty associated with each variable is represented by a probability distribution (probability density function). Uncertainty exists because of the inherent

High temperature compression tests performed on doped fuels

Energy Technology Data Exchange (ETDEWEB)

Duguay, C.; Mocellin, A.; Dehaudt, P. [Commissariat a l`Energie Atomique, CEA Grenoble (France); Fantozzi, G. [INSA Lyon - GEMPPM, Villeurbanne (France)

1997-12-31

The use of additives of corundum structure M{sub 2}O{sub 3} (M=Cr, Al) is an effective way of promoting grain growth of uranium dioxide. The high-temperature compressive deformation of large-grained UO{sub 2} doped with these oxides has been investigated and compared with that of pure UO{sub 2} with a standard microstructure. Such doped fuels are expected to exhibit enhanced plasticity. Their use would therefore reduce the pellet-cladding mechanical interaction and thus improve the performances of the nuclear fuel. (orig.) 5 refs.

High capacity and high rate capability of nitrogen-doped porous hollow carbon spheres for capacitive deionization

International Nuclear Information System (INIS)

Zhao, Shanshan; Yan, Tingting; Wang, Hui; Chen, Guorong; Huang, Lei; Zhang, Jianping; Shi, Liyi; Zhang, Dengsong

2016-01-01

Graphical abstract: - Highlights: • The nitrogen-doped porous hollow carbon spheres were prepared. • The obtained materials have a good capacitive deionization performance. • The electrodes show high salt adsorption rate and good regeneration performance. - Abstract: In this work, nitrogen-doped porous hollow carbon spheres (N-PHCS) were well prepared by using polystyrene (PS) spheres as hard templates and dopamine hydrochloride as carbon and nitrogen sources. Field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images demonstrate that the N-PHCS have a uniform, spherical and hollow structure. Nitrogen adsorption–desorption analysis shows that the N-PHCS have a high specific area of 512 m 2 /g. X-ray photoelectron spectroscopy result reveals that the nitrogen doping amount is 2.92%. The hollow and porous structure and effective nitrogen doping can contribute to large accessible surface area, efficient ion transport and good conductivity. In the electrochemical tests, we can conclude that the N-PHCS have a high specific capacitance value, a good stability and low inner resistance. The N-PHCS electrodes present a high salt adsorption capacity of 12.95 mg/g at a cell voltage of 1.4 V with a flow rate of 40 mL/min in a 500 mg/L NaCl aqueous solution. Moreover, the N-PHCS electrodes show high salt adsorption rate and good regeneration performance in the CDI process. With high surface specific area and effective nitrogen doping, the N-PHCS is promising to the CDI and other electrochemical applications.

High capacity and high rate capability of nitrogen-doped porous hollow carbon spheres for capacitive deionization

Energy Technology Data Exchange (ETDEWEB)

Zhao, Shanshan; Yan, Tingting; Wang, Hui; Chen, Guorong; Huang, Lei; Zhang, Jianping; Shi, Liyi; Zhang, Dengsong, E-mail: dszhang@shu.edu.cn

2016-04-30

Graphical abstract: - Highlights: • The nitrogen-doped porous hollow carbon spheres were prepared. • The obtained materials have a good capacitive deionization performance. • The electrodes show high salt adsorption rate and good regeneration performance. - Abstract: In this work, nitrogen-doped porous hollow carbon spheres (N-PHCS) were well prepared by using polystyrene (PS) spheres as hard templates and dopamine hydrochloride as carbon and nitrogen sources. Field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images demonstrate that the N-PHCS have a uniform, spherical and hollow structure. Nitrogen adsorption–desorption analysis shows that the N-PHCS have a high specific area of 512 m{sup 2}/g. X-ray photoelectron spectroscopy result reveals that the nitrogen doping amount is 2.92%. The hollow and porous structure and effective nitrogen doping can contribute to large accessible surface area, efficient ion transport and good conductivity. In the electrochemical tests, we can conclude that the N-PHCS have a high specific capacitance value, a good stability and low inner resistance. The N-PHCS electrodes present a high salt adsorption capacity of 12.95 mg/g at a cell voltage of 1.4 V with a flow rate of 40 mL/min in a 500 mg/L NaCl aqueous solution. Moreover, the N-PHCS electrodes show high salt adsorption rate and good regeneration performance in the CDI process. With high surface specific area and effective nitrogen doping, the N-PHCS is promising to the CDI and other electrochemical applications.

High-efficiency 2 μm Tm-doped fiber laser

International Nuclear Information System (INIS)

Dvornikov, D.

2013-01-01

Full text: Tm doped fiber laser operating in so called 'eye safe' wavelength region and designed in a MOPA configuration has been demonstrated. Large-mode-area fiber design and availability of high-brightness, high-power pump diodes at 795 nm made possible maximum output power of 25 W achieved at incident pump power of 72 W resulting in optical conversion efficiency about 35%. An important factor that led to an interest in 2 μm Tm-doped lasers is significantly broader spectral tunability of Tm-doped fibers compared to Yb-doped fibers, spanning wavelengths from below 1850 nm to beyond 2100 nm, corresponding to more than 200 nm of available bandwidth. This wavelength region covers the water absorption peaks around 1940 nm, making these lasers a valuable tool for precise medical procedures including noninvasive surgery, as well as several atmospheric transmission windows that are useful for remote sensing, laser radar and range-finding. This work was carried out as part of the EU funded Joint Operational Programme 'Black Sea Basin 2007-2013' and project 2.2.1.74459.339, MIS-ETC 1443 'Research networking for the environmental monitoring and mitigation of adverse ecological effects in the Black Sea Basin (BSB Net-Eco)'.

Preparatory Study of Photomultiplier Tubes of 10-inch and 3-inch Diameter for KM3NeT Underwater Neutrino Telescope

International Nuclear Information System (INIS)

Aiello, S.; Giordano, V.; Leonora, E.

2015-01-01

Large area photomultipliers are widely used in neutrino and astro-particle detectors to measure Cherenkov light in media like water or ice. The key element of these detectors are the so-called 'optical module', which consists of a photodetector enclosed in a transparent pressure-resistant container to protect it and ensure good light transmission. KM3NeT collaboration aims to construct an underwater 'hybrid' neutrino telescope by using two models detection unit. The 'tower' detection unit will be composed of large area 10-inch photomultipliers tube enclosed into 13-inch glass vessel sphere. In the 'string' detection unit instead, the light detector will be the 'digital optical module' (DOM) a glass vessel of 17-inch with 31 photomultipliers of 3- inch diameter looking upwards and downwards. The choice of two different kinds of photomultipliers, obliges us to investigate their main characteristics. Noise pulses at the anode of each photomultiplier strongly affect the performance of the detector. A large study was conducted on noise pulses of large area photomultipliers, considering time and charge distributions of dark pulses, pre-pulses, delayed pulses, and after-pulses. The contribution to noise pulses due to the presence of the external glass vessels was also studied. Moreover the presence of the Earth's magnetic field should modify quantities like gain and transit time spread in photomultipliers and we will deeply investigate on this. (authors)

Doped polymer electrodes for high performance ferroelectric capacitors on plastic substrates

KAUST Repository

Khan, M. A.

2012-10-03

Flexible ferroelectric capacitors with doped polymer electrodes have been fabricated on plastic substrates with performance as good as metal electrodes. The effect of doping on the morphology of polymer electrodes and its impact on device performance have been studied. Improved fatigue characteristics using doped and undoped poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) electrodes versus metal electrodes are observed. It is shown that the polymer electrodes follow classical ferroelectric and dielectric responses, including series resistance effects. The improved device characteristics obtained using highly conducting doped PEDOT:PSS suggest that it may be used both as an electrode and as global interconnect for all-polymer transparent circuits on flexible substrates.

Dietary supplementation and doping-related factors in high-level sailing

Directory of Open Access Journals (Sweden)

Rodek Jelena

2012-12-01

Full Text Available Abstract Background Although dietary supplements (DSs in sports are considered a natural need resulting from athletes’ increased physical demands, and although they are often consumed by athletes, data on DS usage in Olympic sailing are scarce. The aim of this study was to study the use of and attitudes towards DSs and doping problems in high-level competitive sailing. Methods The sample consisted of 44 high-level sailing athletes (5 of whom were female; total mean age 24.13 ± 6.67 years and 34 coaches (1 of whom was female; total mean age 37.01 ± 11.70. An extensive, self-administered questionnaire of substance use was used, and the subjects were asked about sociodemographic data, sport-related factors, DS-related factors (i.e., usage of and knowledge about DSs, sources of information, and doping-related factors. The Kruskal-Wallis ANOVA was used to determine the differences in group characteristics, and Spearman’s rank order correlation and a logistic regression analysis were used to define the relationships between the studied variables. Results DS usage is relatively high. More than 77% of athletes consume DSs, and 38% do so on a regular basis (daily. The athletes place a high degree of trust in their coaches and/or physicians regarding DSs and doping. The most important reason for not consuming DSs is the opinion that DSs are useless and a lack of knowledge about DSs. The likelihood of doping is low, and one-third of the subjects believe that doping occurs in sailing (no significant differences between athletes and coaches. The logistic regression found crew number (i.e., single vs. double crew to be the single significant predictor of DS usage, with a higher probability of DS consumption among single crews. Conclusion Because of the high consumption of DSs future investigations should focus on real nutritional needs in sailing sport. Also, since athletes reported that their coaches are the primary source of information about

Doping effects in high-T{sub c} superconductors

Energy Technology Data Exchange (ETDEWEB)

Hessel Andersen, N.

1996-11-01

The purpose of the project has been to study how the superconducting and magnetic properties of the high temperature superconductors change as function of oxygen stoichiometry and cation doping. The primary system of investigation has been YBa{sub 2}Cu{sub 3}O{sub 6+x}, which has been studied as function of oxygen stoichiometry, 0 < x < 1, and cation doping with Al, Co and Fe on the Cu-sites and Nd and Pr on the Y-site. In these materials the hole doping into the CuO{sub 2} planes, that is necessary for superconductivity, is strongly depending on structural ordering. The static properties and the kinetics of the structural ordering process have been studied experimentally by neutron and high energy synchrotron x-ray diffraction, by Raman scattering, and by computer simulation technique. Not only the oxygen stoichiometry but also the cation doping has been shown to influence the magnetic phases, in some cases in an unexpected manner. Thus, by neutron diffraction experiments it has been shown that doping with non-magnetic Al gives rise to a new magnetic phase. A theoretical model, has been developed. The magnetic phases of the Cu and Nd ordering in NdBa{sub 2}Cu{sub 3}O{sub 6+x}, and of the Cu and Pr ordering in PrBa{sub 2}Cu{sub 3}O{sub 6+x} have been studied by neutron diffraction with the main purpose of understanding why PrBa{sub 2}Cu{sub 3}O{sub 6+x} is magnetic and non-superconducting for all oxygen stoichiometries. In NdBa:2Cu{sub 3}O{sub 6+x} studies of the magnetic flux lattice have been carried out by Small Angle Neutron Scattering. Additional structural studies of the superconducting and magnetic phases of related materials, of RENi{sub 2}B{sub 2}C (RE = rare earth), and of oxidized and cation doped materials based on La{sub 2}CuO{sub 4+{delta}} have been carried out. Methods for structural studies and analyses, and equipment for electrical and magnetic characterization have been developed. (EG) 5 tabs., 46 ills., 35 refs.

Plasma Doping - Enabling Technology for High Dose Logic and Memory Applications

International Nuclear Information System (INIS)

Miller, T.; Godet, L.; Papasouliotis, G. D.; Singh, V.

2008-01-01

As logic and memory device dimensions shrink with each generation, there are more high dose implants at lower energies. Examples include dual poly gate (also referred to as counter-doped poly), elevated source drain and contact plug implants. Plasma Doping technology throughput and dopant profile benefits at these ultra high dose and lower energy conditions have been well established [1,2,3]. For the first time a production-worthy plasma doping implanter, the VIISta PLAD tool, has been developed with unique architecture suited for precise and repeatable dopant placement. Critical elements of the architecture include pulsed DC wafer bias, closed-loop dosimetry and a uniform low energy, high density plasma source. In this paper key performance metrics such as dose uniformity, dose repeatability and dopant profile control will be presented that demonstrate the production-worthiness of the VIISta PLAD tool for several high dose applications.

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

Science.gov (United States)

Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

2015-05-05

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

Science.gov (United States)

Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

2015-05-01

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

12-inch x-ray image intensifier with thin metal input window

Energy Technology Data Exchange (ETDEWEB)

Obata, Yoshiharu; Anno, Hidero; Harao, Norio [Toshiba Corp., Kawasaki, Kanagawa (Japan)

1982-08-01

Borosilicate glass has been used for X-ray input window of image intensifiers (I.I.) up to now. Now two new types of 12-inch metal I.I., RT12301C and RT12302C, have been developed. They use convex 1-mm aluminum (instead of 5-mm borosilicate glass) for the input window. Adopting a high-performance penta-electronic lens and a new type of light guide CsI film, these intensifiers have greatly improved contrast, quantum detection efficiency (QDE) and resolution capability. In spite of low dosage, image quality equivalent to that in the conventional direct radiograph is obtained through combined use of the new-type 12-inch metal I.I. with 0.3-mm small-focal-spot X-ray tube. Great contribution to digital radiography is expected of this I.I.

Doping of two-dimensional MoS2 by high energy ion implantation

Science.gov (United States)

Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

2017-12-01

Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

Surface Plasmons on Highly Doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

2016-01-01

Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

Spectroscopic XPEEM of highly conductive SI-doped GaN wires

Energy Technology Data Exchange (ETDEWEB)

Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)

2015-12-15

Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.

Highly efficient cobalt-doped carbon nitride polymers for solvent-free selective oxidation of cyclohexane

Directory of Open Access Journals (Sweden)

Yu Fu

2017-04-01

Full Text Available Selective oxidation of saturated hydrocarbons with molecular oxygen has been of great interest in catalysis, and the development of highly efficient catalysts for this process is a crucial challenge. A new kind of heterogeneous catalyst, cobalt-doped carbon nitride polymer (g-C3N4, was harnessed for the selective oxidation of cyclohexane. X-ray diffraction, Fourier transform infrared spectra and high resolution transmission electron microscope revealed that Co species were highly dispersed in g-C3N4 matrix and the characteristic structure of polymeric g-C3N4 can be retained after Co-doping, although Co-doping caused the incomplete polymerization to some extent. Ultraviolet–visible, Raman and X-ray photoelectron spectroscopy further proved the successful Co doping in g-C3N4 matrix as the form of Co(IIN bonds. For the selective oxidation of cyclohexane, Co-doping can markedly promote the catalytic performance of g-C3N4 catalyst due to the synergistic effect of Co species and g-C3N4 hybrid. Furthermore, the content of Co largely affected the activity of Co-doped g-C3N4 catalysts, among which the catalyst with 9.0 wt% Co content exhibited the highest yield (9.0% of cyclohexanone and cyclohexanol, as well as a high stability. Meanwhile, the reaction mechanism over Co-doped g-C3N4 catalysts was elaborated. Keywords: Selective oxidation of cyclohexane, Oxygen oxidant, Carbon nitride, Co-doping

The Prevalence and Covariates of Potential Doping Behavior in Kickboxing; Analysis Among High-Level Athletes

Directory of Open Access Journals (Sweden)

Sekulic Damir

2017-10-01

Full Text Available The official reports on doping behavior in kickboxing are alarming, but there have been no empirical studies that examined this problem directly. The aim of this study was to investigate the prevalence, gender differences and covariates of potential-doping-behavior, in kickboxing athletes. A total of 130 high-level kickboxing athletes (92 males, 21.37 ± 4.83 years of age, 8.39 ± 5.73 years of training experience; 38 women, 20.31 ± 2.94 years of age; 9.84 ± 4.74 years of training experience completed questionnaires to study covariates and potential-doping behavior. The covariates were: sport factors (i.e. experience, success, doping-related factors (i.e. opinion about penalties for doping users, number of doping testing, potential-doping-behavior, etc., sociodemographic variables, task- and ego-motivation, knowledge on sports nutrition, and knowledge on doping. Gender-based differences were established by independent t-tests, and the Mann-Whitney test. Multinomial logistic regression analyses were performed to define the relationships between covariates and a tendency toward potential-doping behavior (positive tendency – neutral – negative tendency. The potential-doping behavior was higher in those athletes who perceived kickboxing as doping contaminated sport. The more experienced kickboxers were associated with positive intention toward potential-doping behavior. Positive intention toward potential-doping behavior was lower in those who had better knowledge on sports nutrition. The task- and ego-motivation were not associated to potential-doping behavior. Because of the high potential-doping-behavior (less than 50% of athletes showed a negative tendency toward doping, and similar prevalence of potential-doping behavior between genders, this study highlights the necessity of a systematic anti-doping campaign in kickboxing. Future studies should investigate motivational variables as being potentially related to doping behavior in younger

The Prevalence and Covariates of Potential Doping Behavior in Kickboxing; Analysis among High-Level Athletes

Science.gov (United States)

Sekulic, Damir; Zenic, Natasa; Versic, Sime; Maric, Dora; Gabrilo, Goran; Jelicic, Mario

2017-01-01

Abstract The official reports on doping behavior in kickboxing are alarming, but there have been no empirical studies that examined this problem directly. The aim of this study was to investigate the prevalence, gender differences and covariates of potential-doping-behavior, in kickboxing athletes. A total of 130 high-level kickboxing athletes (92 males, 21.37 ± 4.83 years of age, 8.39 ± 5.73 years of training experience; 38 women, 20.31 ± 2.94 years of age; 9.84 ± 4.74 years of training experience) completed questionnaires to study covariates and potential-doping behavior. The covariates were: sport factors (i.e. experience, success), doping-related factors (i.e. opinion about penalties for doping users, number of doping testing, potential-doping-behavior, etc.), sociodemographic variables, task- and ego-motivation, knowledge on sports nutrition, and knowledge on doping. Gender-based differences were established by independent t-tests, and the Mann-Whitney test. Multinomial logistic regression analyses were performed to define the relationships between covariates and a tendency toward potential-doping behavior (positive tendency – neutral – negative tendency). The potential-doping behavior was higher in those athletes who perceived kickboxing as doping contaminated sport. The more experienced kickboxers were associated with positive intention toward potential-doping behavior. Positive intention toward potential-doping behavior was lower in those who had better knowledge on sports nutrition. The task- and ego-motivation were not associated to potential-doping behavior. Because of the high potential-doping-behavior (less than 50% of athletes showed a negative tendency toward doping), and similar prevalence of potential-doping behavior between genders, this study highlights the necessity of a systematic anti-doping campaign in kickboxing. Future studies should investigate motivational variables as being potentially related to doping behavior in younger

Temperature and doping dependence of the high-energy kink in cuprates.

Science.gov (United States)

Zemljic, M M; Prelovsek, P; Tohyama, T

2008-01-25

It is shown that spectral functions within the extended t-J model, evaluated using the finite-temperature diagonalization of small clusters, exhibit the high-energy kink in single-particle dispersion consistent with recent angle-resolved photoemission results on hole-doped cuprates. The kink and waterfall-like features persist up to large doping and to temperatures beyond J; hence, the origin can be generally attributed to strong correlations and incoherent hole propagation at large binding energies. In contrast, our analysis predicts that electron-doped cuprates do not exhibit these phenomena in photoemission.

Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction

International Nuclear Information System (INIS)

Liang, Xianqing; Zhong, Jun; Shi, Yalin; Guo, Jin; Huang, Guolong; Hong, Caihao; Zhao, Yidong

2015-01-01

Highlights: • A novel approach to synthesis of N-doped few-layer graphene has been developed. • The high doping levels of N in products are achieved. • XPS and XANES results reveal a thermal transformation of N bonding configurations. • The developed method is cost-effective and eco-friendly. - Abstract: Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications

Highly Al-doped TiO2 nanoparticles produced by Ball Mill Method: structural and electronic characterization

International Nuclear Information System (INIS)

Santos, Desireé M. de los; Navas, Javier; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

2015-01-01

Highlights: • Highly Al-doped TiO 2 nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO 2 nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti 4+ ions by Al 3+ in the TiO 2 lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature

High-power microcavity lasers based on highly erbium-doped sol-gel aluminosilicate glasses

International Nuclear Information System (INIS)

Le Ngoc Chung; Chu Thi Thu Ha; Nguyen Thu Trang; Pham Thu Nga; Pham Van Hoi; Bui Van Thien

2006-01-01

High-power whispering-gallery-mode (WGM) lasing from highly erbium-doped sol-gel aluminosilicate microsphere cavity coupled to a half-tapered optical fiber is presented. The lasing output power as high as 0.45 mW (-3.5 dBm) was obtained from sol-gel glass microsphere cavity with diameters in the range of 40-150 μm. The sol-gel method for making highly concentration Er-doped aluminosilicate glasses with Er-ion concentrations from 0.125 to 0.65 mol% of Er 3+ is described. Controlling collected lasing wavelength at each WGM is possible by adjusting the distance between the half-taper fiber and the microcavity and by diameter of the waist of half-taper fiber. Using the analytic formulas we calculated the TE and TM lasing modes and it is shown that the experimental results are in good agreement with the calculation prediction

A doped activated carbon prepared from polyaniline for high performance supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Li, Limin; Liu, Enhui; Li, Jian; Yang, Yanjing; Shen, Haijie; Huang, Zhengzheng; Xiang, Xiaoxia; Li, Wen [Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University, Hunan 411105 (China)

2010-03-01

A novel doped activated carbon has been prepared from H{sub 2}SO{sub 4}-doped polyaniline which is prepared by the oxypolymerization of aniline. The morphology, surface chemical composition and surface area of the carbon have been investigated by scanning electron microscope, X-ray photoelectron spectroscopy and Brunaner-Emmett-Teller measurement, respectively. Electrochemical properties of the doped activated carbon have been studied by cyclic voltammograms, galvanostatic charge/discharge, and electrochemical impedance spectroscopy measurements in 6 mol l{sup -1} KOH. The specific capacitance of the carbon is as high as 235 F g{sup -1}, the specific capacitance hardly decreases at a high current density 11 A g{sup -1} after 10,000 cycles, which indicates that the carbon possesses excellent cycle durability and may be a promising candidate for supercapacitors. (author)

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

One-Step Synthesis of Microporous Carbon Monoliths Derived from Biomass with High Nitrogen Doping Content for Highly Selective CO2 Capture

OpenAIRE

Geng, Zhen; Xiao, Qiangfeng; Lv, Hong; Li, Bing; Wu, Haobin; Lu, Yunfeng; Zhang, Cunman

2016-01-01

The one-step synthesis method of nitrogen doped microporous carbon monoliths derived from biomass with high-efficiency is developed using a novel ammonia (NH3)-assisted activation process, where NH3 serves as both activating agent and nitrogen source. Both pore forming and nitrogen doping simultaneously proceed during the process, obviously superior to conventional chemical activation. The as-prepared nitrogen-doped active carbons exhibit rich micropores with high surface area and high nitrog...

Fabrication of Chemically Doped, High Upper Critical Field Magnesium Diboride Superconducting Wires

Energy Technology Data Exchange (ETDEWEB)

Marzik, James, V.

2005-10-13

Controlled chemical doping of magnesium diboride (MgB2) has been shown to substantially improve its superconducting properties to the levels required for high field magnets, but the doping is difficult to accomplish through the usual route of solid state reaction and diffusion. Further, superconducting cables of MgB2 are difficult to fabricate because of the friable nature of the material. In this Phase I STTR project, doped and undoped boron fibers were made by chemical vapor deposition (CVD). Several >100m long batches of doped and undoped fiber were made by CVD codeposition of boron plus dopants. Bundles of these fibers infiltrated with liquid magnesium and subsequently converted to MgB2 to form Mg-MgB2 metal matrix composites. In a parallel path, doped boron nano-sized powder was produced by a plasma synthesis technique, reacted with magnesium to produce doped MgB2 superconducting ceramic bodies. The doped powder was also fabricated into superconducting wires several meters long. The doped boron fibers and powders made in this program were fabricated into fiber-metal composites and powder-metal composites by a liquid metal infiltration technique. The kinetics of the reaction between boron fiber and magnesium metal was investigated in fiber-metal composites. It was found that the presence of dopants had significantly slowed the reaction between magnesium and boron. The superconducting properties were measured for MgB2 fibers and MgB2 powders made by liquid metal infiltration. Properties of MgB2 products (Jc, Hc2) from Phase I are among the highest reported to date for MgB2 bulk superconductors. Chemically doped MgB2 superconducting magnets can perform at least as well as NbTi and NbSn3 in high magnetic fields and still offer an improvement over the latter two in terms of operating temperature. These characteristics make doped MgB2 an effective material for high magnetic field applications, such as magnetic confined fusion, and medical MRI devices. Developing

Fabrication of Chemically Doped, High Upper Critical Field Magnesium Diboride Superconducting Wires

International Nuclear Information System (INIS)

Marzik, James V.

2005-01-01

Controlled chemical doping of magnesium diboride (MgB2) has been shown to substantially improve its superconducting properties to the levels required for high field magnets, but the doping is difficult to accomplish through the usual route of solid state reaction and diffusion. Further, superconducting cables of MgB2 are difficult to fabricate because of the friable nature of the material. In this Phase I STTR project, doped and undoped boron fibers were made by chemical vapor deposition (CVD). Several >100m long batches of doped and undoped fiber were made by CVD codeposition of boron plus dopants. Bundles of these fibers infiltrated with liquid magnesium and subsequently converted to MgB2 to form Mg-MgB2 metal matrix composites. In a parallel path, doped boron nano-sized powder was produced by a plasma synthesis technique, reacted with magnesium to produce doped MgB2 superconducting ceramic bodies. The doped powder was also fabricated into superconducting wires several meters long. The doped boron fibers and powders made in this program were fabricated into fiber-metal composites and powder-metal composites by a liquid metal infiltration technique. The kinetics of the reaction between boron fiber and magnesium metal was investigated in fiber-metal composites. It was found that the presence of dopants had significantly slowed the reaction between magnesium and boron. The superconducting properties were measured for MgB2 fibers and MgB2 powders made by liquid metal infiltration. Properties of MgB2 products (Jc, Hc2) from Phase I are among the highest reported to date for MgB2 bulk superconductors. Chemically doped MgB2 superconducting magnets can perform at least as well as NbTi and NbSn3 in high magnetic fields and still offer an improvement over the latter two in terms of operating temperature. These characteristics make doped MgB2 an effective material for high magnetic field applications, such as magnetic confined fusion, and medical MRI devices. Developing

DEVELOPMENT OF A NINE INCH DIAMETER, MACH 5.5, MONORAIL, ROCKET SLED.

Science.gov (United States)

A nine inch diameter monorail rocket sled was designed, fabricated and tested at Holloman Air Force Base. The vehicle was designed to allow easy...replacement of appendages which were subject to severe aerodynamic heating and/or high wear rates. The monorail vehicle as described was shown to be

Improving superconducting properties of YBCO high temperature superconductor by Graphene Oxide doping

Energy Technology Data Exchange (ETDEWEB)

Dadras, S., E-mail: dadras@alzahra.ac.ir; Dehghani, S.; Davoudiniya, M.; Falahati, S.

2017-06-01

In this research, we report the synthesis and characterization of YBa{sub 2}Cu{sub 3}O{sub 7-δ} (YBCO) high temperature superconductor prepared by sol-gel method and doped with Graphene Oxide (GO) in different weight percentages, 0, 0.1, 0.7 and 1 % wt. The x-ray diffraction (XRD) analysis confirms the formation of orthorhombic phase of superconductivity for all the prepared samples. We found that GO doping reduces the crystalline size of the samples. We evaluated the effects of GO doping on the normal state resistivity (ρ), superconducting transition temperature (T{sub c}) and critical current density (J{sub c}). The results show that the GO doping has a positive effect on these properties. Also, the highest J{sub c} is obtained for the 0.7 %wt GO doped YBCO compound that its critical current density is about 15 times more than the J{sub c} of pure one in 0.4 T magnetic field. The scanning electron microscope (SEM) analysis shows that there are better connections between the grains of GO doped samples. - Highlights: • Graphene Oxide doping increased the YBCO critical current density. • Graphene Oxide creates a better connection between the YBCO grains. • The normal resistivity of samples were decreased by GO doping to YBCO compounds. • Graphene Oxide doping has a positive effect on the critical transition temperature.

Celiac Disease: Four Inches and Seven Pounds...

Science.gov (United States)

... Disease" Articles Celiac Disease Changes Everything / What is Celiac Disease? / Symptoms, Diagnosis & Treatment / Four Inches and Seven Pounds… / Learning to Live Well with Celiac Disease / Living Gluten-Free Spring 2015 Issue: Volume 10 ...

High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

2018-05-08

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Universal Scaling in Highly Doped Conducting Polymer Films

NARCIS (Netherlands)

Kronemeijer, A. J.; Huisman, E. H.; Katsouras, I.; van Hal, P. A.; Geuns, T. C. T.; Blom, P. W. M.; van der Molen, S. J.; de Leeuw, D. M.

2010-01-01

Electrical transport of a highly doped disordered conducting polymer, viz. poly-3,4-ethylenedioxythiophene stabilized with poly-4-styrenesulphonic acid, is investigated as a function of bias and temperature. The transport shows universal power-law scaling with both bias and temperature. All

Universal scaling in highly doped conducting polymer films

NARCIS (Netherlands)

Kronemeijer, A.J.; Huisman, E.H.; Katsouras, I.; Hal, P.A. van; Geuns, T.C.T.; Blom, P.W.M.; Molen, S.J. van der; Leeuw, D.M. de

2010-01-01

Electrical transport of a highly doped disordered conducting polymer, viz. poly-3,4-ethylenedioxythiophene stabilized with poly-4-styrenesulphonic acid, is investigated as a function of bias and temperature. The transport shows universal power-law scaling with both bias and temperature. All

High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

Energy Technology Data Exchange (ETDEWEB)

Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

2012-03-30

Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

Direct Electroplating on Highly Doped Patterned Silicon Wafers

NARCIS (Netherlands)

Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate

Studies of High-T$_{c}$ Superconductors Doped with Radioactive Isotopes

CERN Multimedia

Alves, E J; Goncalves marques, J; Cardoso, S; Lourenco, A A; Sousa, J B

2002-01-01

%title\\\\ \\\\We propose to study High T$_{c} $ Superconductors~(HTSc) doped with radioactive elements at ISOLDE, in order to investigate some of the problems that persist after use of conventional characterization techniques. Three main topics are proposed: \\begin{enumerate} \\item Characterization of the order/disorder of Hg in the Hg-planes of the HTSc family Hg$_{1}$Ba$_{2}$R$_{(n-1)}$Cu$_{n}$O$_{(2n+2+\\delta)}$ (T$_{c}$ > 130 K) due to defects or impurities such as C and Au. \\item Studies of the doping of Infinite Layers Cuprates (RCuO$_{2}$)$_{n}$, R=Ca, Sr or Ba, using unstable nuclei of the alkaline-earth (IIA) group which decay to the alkaline nuclei (IA) group. The purpose is to introduce charge carriers in these materials by changing the valence of the cations during the nuclear transmutation. The possibility of using ion implantation to introduce directly an alkaline dopant will also be studied. \\item Studies of the Hg/Au doping of high quality YBa$_{2}$Cu$_{3}$O$_{6+x}$ thin films. We intend to chara...

In Situ One-Step Synthesis of Hierarchical Nitrogen-Doped Porous Carbon for High Performance Supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Jeon, Ju Won [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Texas A & M Univ., College Station, TX (United States); Sharma, Ronish [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Meduri, Praveen [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Arey, Bruce W. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Schaef, Herbert T. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lutkenhaus, Jodie [Texas A & M Univ., College Station, TX (United States); Lemmon, John P. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Thallapally, Praveen K. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Nandasiri, Manjula I. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); McGrail, B. Peter [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Nune, Satish K. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2014-04-30

Electrochemical performance of the existing state-of-the art capacitors is not very high, key scientific barrier is that its charge storage mechanism wholly depends on adsorption of electrolyte on electrode. We present a novel method for the synthesis of nitrogen -doped porous carbons and address the drawback by precisely controlling composition and surface area. Nitrogen-doped porous carbon was synthesized using a self-sacrificial template technique without any additional nitrogen and carbon sources. They exhibited exceptionally high capacitance (239 Fg-1) due to additional pseudocapacitance originating from doped nitrogen. Cycling tests showed no obvious capacitance decay even after 10,000 cycles, which meets the requirement of commercial supercapacitors. Our method is simple and highly efficient for the production of large quantities of nitrogen-doped porous carbons.

Dynamical spin susceptibility of electron-doped high-Tc cuprates. Comparison with hole-doped systems

International Nuclear Information System (INIS)

Suzuki, Atsuo; Mutou, Tetsuya; Tanaka, Syunsuke; Hirashima, Dai S.

2010-01-01

The magnetic excitation spectrum of electron-doped copper oxide superconductors is studied by calculating the dynamical spin susceptibility of the two-dimensional Hubbard model in which a d x2-y2 -wave superconducting order parameter is assumed. The spectrum of electron-doped systems is compared with that of hole-doped systems, and the relationship between the frequency at which a peak grows in the spectrum and the superconducting energy gap at a hot spot is investigated. A peak may be observed even when the magnetic resonance condition is not exactly satisfied. We find that, in the electron-doped systems, the resonance condition is less likely to be satisfied than in the hole-doped systems because of the small density of states around the hot spots, and the peak frequency is close to twice the gap magnitude at the hot spots. (author)

Yb-doped aluminophosphosilicate ternary fiber with high efficiency and excellent laser stability

Science.gov (United States)

Li, Yuwei; Peng, Kun; Zhan, Huan; Liu, Shuang; Ni, Li; Wang, Yuying; Yu, Juan; Wang, Xiaolong; Wang, Jianjun; Jing, Feng; Lin, Aoxiang

2018-03-01

By using chelate precursor doping technique and traditional modified chemical vapor deposition system, we fabricated Yb-doped aluminophosphosilicate (Al2O3-P2O5-SiO2, ternary Yb-APS) large-mode-area fiber and reported on its laser performance. The fiber preform was doped with Al, P and Yb with concentration of ∼8000 ppm, ∼1700 ppm and ∼400 ppm in molar percent, respectively. Tested with master oscillator power amplifier system, the home-made Yb-APS fiber was found to present 1.02 kW at 1061.1 nm with a high slope efficiency of 81.2% and excellent laser stability with power fluctuation less than ±1.1% for over 10 h. Compared with Yb-doped aluminosilicate (Al2O3-SiO2, binary Yb-AS) fiber, the introduction of P2O5 effectively suppressed photodarkening effect even the P/Al ratio is much less than 1, indicating that Yb-APS fiber is a better candidate for high power fiber lasers.

SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

Energy Technology Data Exchange (ETDEWEB)

Al-Mumen, Haider [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Electrical Engineering, University of Babylon, Babylon (Iraq); Dong, Lixin; Li, Wen, E-mail: wenli@egr.msu.edu [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

2013-12-02

N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.

Black phosphorus induced photo-doping for high-performance organic-silicon heterojunction photovoltaics

Institute of Scientific and Technical Information of China (English)

Zhouhui Xia; Pengfei Li; Yuqiang Liu; Tao Song; Qiaoliang Bao; Shuit-Tong Lee; Baoquan Sun

2017-01-01

In conventional crystalline silicon (Si) homojunction solar cells,a strategy of doping by transporting phosphorus or boron impurities into Si is commonly used to build Ohmic contacts at rear electrodes.However,this technique involves an energy intensive,high temperature (～ 800 ℃) process and toxic doping materials.Black phosphorus (BP) is a two-dimensional,narrow bandgap semiconductor with high carrier mobility that exhibits broad light harvesting properties.Here,we place BP:zinc oxide (ZnO) composite films between Si and aluminum (Al) to improve their contact.Once the BP harvests photons with energies below 1.1 eV from the crystalline Si,the ZnO carrier concentration increases dramatically due to charge injection.This photo-induced doping results in a high carrier concentration in the ZnO film,mimicking the modulated doping technique used in semiconductor heterojunctions.We show that photo-induced carriers dramatically increase the conductivities of the BP-modified ZnO films,thus reducing the contact resistance between Si and Al.A photovoltaic power conversion efficiency of 15.2％ is achieved in organic-Si heterojunction solar cells that use a ZnO:BP layer.These findings demonstrate an effective way of improving Si/metal contact via a simple,low temperature process.

One-pot synthetic method to prepare highly N-doped nanoporous carbons for CO2 adsorption

International Nuclear Information System (INIS)

Meng, Long-Yue; Park, Soo-Jin

2014-01-01

A one-pot synthetic method was used for the preparation of nanoporous carbon containing nitrogen from polypyrrole (PPY) using NaOH as the activated agent. The activation process was carried out under set conditions (NaOH/PPY = 2 and NaOH/PPY = 4) at different temperatures in 600–900 °C for 2 h. The effect of the activation conditions on the pore structure, surface functional groups and CO 2 adsorption capacities of the prepared N-doped activated carbons was examined. The carbon was analyzed by X-ray photoelectron spectroscopy (XPS), N2/77 K full isotherms, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The CO 2 adsorption capacity of the N-doped activated carbon was measured at 298 K and 1 bar. By dissolving the activation agents, the N-doped activated carbon exhibited high specific surface areas (755–2169 m 2 g −1 ) and high pore volumes (0.394–1.591 cm 3 g −1 ). In addition, the N-doped activated carbons contained a high N content at lower activation temperatures (7.05 wt.%). The N-doped activated carbons showed a very high CO 2 adsorption capacity of 177 mg g −1 at 298 K and 1 bar. The CO 2 adsorption capacity was found to be dependent on the microporosity and N contents. - Highlights: • A one-pot synthetic method was used for the preparation of N-doped nanoporous carbons. • Polypyrrole (PPY) were activated with NaOH under set conditions (NaOH/PPY = 2 and 4). • N-doped activated carbon exhibited high specific surface areas (2169 m 2 g −1 ). • The carbons showed a very high CO 2 adsorption capacity of 177 mg g −1 at 298 K

Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

Energy Technology Data Exchange (ETDEWEB)

Santos, Desireé M. de los, E-mail: desire.delossantos@uca.es; Navas, Javier, E-mail: javier.navas@uca.es; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

2015-10-15

Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.

Test procedure for the Master-Lee and the modified Champion four inch hydraulic cutters

International Nuclear Information System (INIS)

Crystal, J.B.

1995-01-01

The Master-Lee and the modified Champion 4 Inch hydraulic cutters are being retested to gather and document information related to the following: determine if the Master-Lee cutters will cut the trunnions of an Aluminum fuel canister and a Stainless Steel fuel canister; determine if the Master-Lee cutters will cut 1 1/2 inch diameter fire hose; determine if the modified Champion 4 inch blade will cut sections of piping; and determine the effectiveness of the centering device for the Champion 4 Inch cutters. Determining the limitations of the hydraulic cutter will aid in the process of debris removal in the K-Basin. Based on a previous test, the cutters were returned to the manufacturer for modifications. The modifications to the Champion 4 Inch Cutter and further testing of the Master-Lee Cutter are the subjects of these feature tests

Am/Cm TTR testing - 3/8-inch glass beads evaluation in CIM5

International Nuclear Information System (INIS)

Witt, D. C.

2000-01-01

To facilitate the procurement and handling of the glass former for Am/Cm vitrification in the F-Canyon MPPF, 1/4 inch and 3/8 inch diameter glass beads were purchased from Corning for evaluation in the 5 inch Cylindrical Induction Melter (CIM5). Prior to evaluating the beads in the CIM5, tests were conducted in the Drain Tube Test Stand (DTTS) with 1/4 inch beads, 3/8 inch beads, and a 50/50 mixture to identify any process concerns. Results of the DTTS tests are summarized in Attachment 1. A somewhat larger volume expansion was experienced in all three DTTS runs as compared to a standard run using cullet. Further testing of the use of glass beads in the CIM5 was requested by the Design Authority as Task 1.02 of Technical Task Request 99-MNSS/SE-006. Since the Technical Task Plan was not yet approved, the completion of this task was conducted under an authorization request approved by the SRTC Laboratory Director, S. Wood. This request is included as Attachment 2

Origin of the high p-doping in F intercalated graphene on SiC

KAUST Repository

Cheng, Yingchun; Kaloni, T. P.; Huang, G. S.; Schwingenschlö gl, Udo

2011-01-01

and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p

High temperature mechanical tests performed on doped fuels

International Nuclear Information System (INIS)

Dugay, C.; Mocellin, A.; Dehaudt, P.; Sladkoff, M.

1998-01-01

The high-temperature compressive deformation of large-grained UO 2 doped with metallic oxides has been investigated and compared with that of pure UO 2 with a standard microstructure. All the specimens are made from a single batch of UO 2 powder. Tests with constant applied strain rate of 20μm.min -1 show that Cr 2 O 3 additions cause a decrease in the flow stress of about 15 MPa compared with the reference material. When reduced in hydrogen at 1500 deg. C the specimens present a peak stress close to the flow stress of the pure UO 2 . Measurements of creep rates are made at 1500 deg. C at applied stresses varying from 20 to 70 MPa. Cr 2 O 3 additions increase the creep-rate, up to several orders of magnitude-change from the pure material to a doped one. All the doped materials exhibit power-law creep with exponents in the range of 4.9 to 6.3. The activation energy varies from 466 to 451 kJ/mol depending on the dopant concentration. The creep of the undoped material is divided into three regimes of deformation depending on stress. At low stresses the strain rate shows a second power dependence on stress. At high stress levels a higher stress dependence is observed. The creep power-law breaks down and an exponential law holds true at higher stresses. The activation energies are found to be 410 and 560 kJ/mol in the low- and high-stress regions respectively. The former value is in good agreement with the grain boundary diffusion energy in stoichiometric polycrystalline uranium dioxide and the latter corresponds to that found for self-diffusion energy of uranium. Creep behaviours are discussed in terms of deformation mechanisms. (author)

Defect mediated magnetic interaction and high Tc ferromagnetism in Co doped ZnO nanoparticles.

Science.gov (United States)

Pal, Bappaditya; Giri, P K

2011-10-01

Structural, optical and magnetic studies have been carried out for the Co-doped ZnO nanoparticles (NPs). ZnO NPs are doped with 3% and 5% Co using ball milling and ferromagnetism (FM) is studied at room temperature and above. A high Curie temperature (Tc) has been observed from the Co doped ZnO NPs. X-ray diffraction and high resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption and photoluminescence studies on the doped samples show change in band structure and oxygen vacancy defects, respectively. Micro-Raman studies of doped samples shows defect related additional strong bands at 547 and 574 cm(-1) confirming the presence of oxygen vacancy defects in ZnO lattice. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear M-H loop with saturation magnetization and coercive field of the order of 4-6 emu/g and 260 G, respectively. Temperature dependence of magnetization measurement shows sharp ferromagnetic to paramagnetic transition with a high Tc = 791 K for 3% Co doped ZnO NPs. Ferromagnetic ordering is interpreted in terms of overlapping of polarons mediated through oxygen vacancy defects based on the bound magnetic polaron (BMP) model. We show that the observed FM data fits well with the BMP model involving localised carriers and magnetic cations.

Optical properties and laser oscillations of highly neodymium-doped YAG ceramics

Energy Technology Data Exchange (ETDEWEB)

Shoji, Ichiro; Kurimura, Sunao; Sato, Yoichi; Taira, Takunori [Laser Research Center, Institute for Molecular Science, Okazaki, Aichi (Japan); Ikesue, Akio [Japan Fine Ceramics Center, Nagoya, Aichi (Japan); Yoshida, Kunio [Institute of Laser Engineering, Osaka Institute of Technology, Osaka (Japan)

2000-03-01

Diode-pumped microchip laser oscillation of highly Nd{sup 3+}-doped polycrystalline YAG ceramics has been succeeded. It is found that the loss of a 2.4 at. % neodymium-doped ceramic YAG is as low as that of a 0.9 at. % Nd:YAG single crystal. From a 4.8 at. % Nd:YAG ceramic microchip, 2.3 times higher laser output power is obtained than that from a 0.9 at. % Nd:YAG single crystal microchip. (author)

Optical properties and laser oscillations of highly neodymium-doped YAG ceramics

International Nuclear Information System (INIS)

Shoji, Ichiro; Kurimura, Sunao; Sato, Yoichi; Taira, Takunori; Ikesue, Akio; Yoshida, Kunio

2000-01-01

Diode-pumped microchip laser oscillation of highly Nd 3+ -doped polycrystalline YAG ceramics has been succeeded. It is found that the loss of a 2.4 at. % neodymium-doped ceramic YAG is as low as that of a 0.9 at. % Nd:YAG single crystal. From a 4.8 at. % Nd:YAG ceramic microchip, 2.3 times higher laser output power is obtained than that from a 0.9 at. % Nd:YAG single crystal microchip. (author)

Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

Science.gov (United States)

Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

2018-03-01

Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

Production of exotic beams at the LBL 88-Inch Cyclotron by the ISOL method

International Nuclear Information System (INIS)

1990-04-01

The Users of the LBL 88-Inch Cyclotron are preparing a proposal to produce exotic, i.e., radioactive beams. The facility will consist of a high-current 30 MeV cyclotron to generate the radioactive nuclei, an ECR source that can be coupled to different production targets, and the 88-Inch Cyclotron to accelerate the radioactive ions. Thus, the basic concept is that of the double cyclotron system pioneered at Louvain-la-Neuve, although the initial emphasis will be on producing a variety of light proton-rich beams at energies up to 10 MeV/A. At this workshop we wish to outline what is being planned, to invite comments and suggestions, and, especially, to encourage participation. We believe that this facility will be an important step toward establishing the scientific and technical basis for a National High Intensity Facility. This can be achieved through active participation by members of the radioactive beam (RB) community in (1) experiments with high quality radioactive beams of moderate intensity and, (2) R ampersand D on high beam-power targets and highly efficient ion sources. 5 refs., 4 figs

Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

Science.gov (United States)

Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

2018-04-24

Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

Biomineralization-Inspired Synthesis of Cerium-Doped Carbonaceous Nanoparticles for Highly Hydroxyl Radical Scavenging Activity

Science.gov (United States)

Zou, Shenqiang; Zhu, Xiaofang; Zhang, Lirong; Guo, Fan; Zhang, Miaomiao; Tan, Youwen; Gong, Aihua; Fang, Zhengzou; Ju, Huixiang; Wu, Chaoyang; Du, Fengyi

2018-03-01

Cerium oxide nanoparticles recently have received extensive attention in biomedical applications due to their excellent anti-oxidation performance. In this study, a simple, mild, and green approach was developed to synthesize cerium-doped carbonaceous nanoparticles (Ce-doped CNPs) using bio-mineralization of bull serum albumin (BSA) as precursor. The resultant Ce-doped CNPs exhibited uniform and ultrasmall morphology with an average size of 14.7 nm. XPS and FTIR results revealed the presence of hydrophilic group on the surface of Ce-doped CNPs, which resulted in excellent dispersity in water. The CCK-8 assay demonstrated that Ce-doped CNPs possessed favorable biocompatibility and negligible cytotoxicity. Using H2O2-induced reactive oxygen species (ROS) as model, Ce-doped CNPs showed highly hydroxyl radical scavenging capability. Furthermore, flow cytometry and live-dead staining results indicated that Ce-doped CNPs protected cells from H2O2-induced damage in a dose-dependent effect, which provided a direct evidence for anti-oxidative performance. These findings suggest that Ce-doped CNPs as novel ROS scavengers may provide a potential therapeutic prospect in treating diseases associated with oxidative stress.

Low- and high-index sol-gel films for planar and channel-doped waveguides

Science.gov (United States)

Canva, Michael; Chaput, Frederic; Lahlil, Khalid; Rachet, Vincent; Goudket, Helene; Boilot, Jean-Pierre; Levy, Yves

2001-11-01

In view of realizing integrated optic components based on effects such as electro-optic, chi(2):chi(2) cascading, stimulated emission,... one has to first synthesize materials with the proper functionality; this may be achieved by doping solid state matrices by the appropriate organic chromophores. Second, and as important, these materials have to be properly structured into the final optical guiding structures. We shall report on issues related to the realization of chromophore-doped planar waveguides as well as channel waveguides. These structures were realized by either photo-transformation such as photo- chromism and photo-bleaching or reactive ion etching technique, starting with chromophore doped sol-gel materials at high loading contents for which optical index may be controlled via the local dopant concentration. With these materials and techniques, waveguides and components characterized by propagation losses of the order of a cm-1, measured off the edge of the absorption band of the doping species, were fabricated. In order to be also able to study and use waveguide functionalized with low concentration of chromophore species, we developed new sol-gel materials of high optical index, yet low temperature processed. These new films are under study to evaluate their potential as host for organic doped waveguides devices.

Highly luminescent Eu{sup 3+}-doped benzenetricarboxylate based materials

Energy Technology Data Exchange (ETDEWEB)

Silva, Ivan G.N. [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Mustafa, Danilo, E-mail: dmustafa@iq.usp.br [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Andreoli, Bruno [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Felinto, Maria C.F.C. [Centro de Química do Meio Ambiente, Instituto de Pesquisas Energéticas e Nucleares, Av. Prof. Lineu Prestes 2242, São Paulo 05508-000, SP (Brazil); Malta, Oscar L. [Departamento de Química Fundamental, Universidade Federal de Pernambuco, Av. Prof. Moraes Rego, 1235, Recife 50670-90, PE (Brazil); Brito, Hermi F., E-mail: hefbrito@iq.usp.br [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil)

2016-02-15

[RE(TMA)] anhydrous complexes (RE{sup 3+}: Y, Gd and Lu) present high red emission intensity with a quantum efficiency (~45%) for the [Y(TMA):Eu{sup 3+}] complexes, due to the absence of non-radioactive decay pathways mediated by water molecules. The complexes were prepared in mild conditions. All the compounds are crystalline and thermostable up to 460 °C. Phosphorescence data of the complexes with Y, Gd and Lu show that the T{sub 1} state of the TMA{sup 3−} anion has energy higher than the {sup 5}D{sub 0} emitting level of the Eu{sup 3+} ion, indicating that the ligand can act as an intramolecular energy sensitizer. The photoluminescence properties of the doped materials were studied based on the excitation and emission spectra and luminescence decay curves. The experimental intensity parameters (Ω{sub λ}), lifetimes (τ), radiative (A{sub rad}) and non-radiative (A{sub nrad}) decay rates were determined and discussed. - Highlights: • Highly luminescent Europium doped anhydrous complexes. • Efficient monochromatic red light conversion molecular devices (LCMDs). • High emission quantum efficiencies.

Transverse mode instability in high-power ytterbium doped fiber ampliers

DEFF Research Database (Denmark)

Hansen, Kristian Rymann

The last couple of decades have brought an impressive growth in the output power of rare-earth doped fiber lasers and amplifiers, reaching the kW average power regime in both CW and pulsed systems. As a result, even though fiber lasers have excellent heat dissipation properties, thermal effects due...... is to provide a theoretical understanding of the thermo-optical effects in high-power ytterbium doped fiber amplifiers, with a particular emphasis on understanding the aforementioned mode instability issue. Two main approaches to the problem have been used. The first is the development of a numerical model...

Design of high quality doped CeO2 solid electrolytes with nanohetero structure

International Nuclear Information System (INIS)

Mori, T.; Ou, D.R.; Ye, F.; Drennan, J.

2006-01-01

Doped cerium (CeO 2 ) compounds are fluorite related oxides which show oxide ionic conductivity higher than yttria-stabilized zirconia in oxidizing atmosphere. As a consequence of this, a considerable interest has been shown in application of these materials for low (400-650 o C) temperature operation of solid oxide fuel cells (SOFCs). In this paper, our experimental data about the influence of microstructure at the atomic level on electrochemical properties were reviewed in order to develop high quality doped CeO 2 electrolytes in fuel cell applications. Using this data in the present paper, our original idea for a design of nanodomain structure in doped CeO 2 electrolytes was suggested. The nanosized powders and dense sintered bodies of M doped CeO 2 (M:Sm,Gd,La,Y,Yb, and Dy) compounds were fabricated. Also nanostructural features in these specimens were introduced for conclusion of relationship between electrolytic properties and domain structure in doped CeO 2 . It is essential that the electrolytic properties in doped CeO 2 solid electrolytes reflect in changes of microstructure even down to the atomic scale. Accordingly, a combined approach of nanostructure fabrication, electrical measurement and structure characterization was required to develop superior quality doped CeO 2 electrolytes in the fuel cells. (author)

N/S Co-doped Carbon Derived From Cotton as High Performance Anode Materials for Lithium Ion Batteries

Directory of Open Access Journals (Sweden)

Jiawen Xiong

2018-04-01

Full Text Available Highly porous carbon with large surface areas is prepared using cotton as carbon sources which derived from discard cotton balls. Subsequently, the sulfur-nitrogen co-doped carbon was obtained by heat treatment the carbon in presence of thiourea and evaluated as Lithium-ion batteries anode. Benefiting from the S, N co-doping, the obtained S, N co-doped carbon exhibits excellent electrochemical performance. As a result, the as-prepared S, N co-doped carbon can deliver a high reversible capacity of 1,101.1 mA h g−1 after 150 cycles at 0.2 A g−1, and a high capacity of 531.2 mA h g−1 can be observed even after 5,000 cycles at 10.0 A g−1. Moreover, excellently rate capability also can be observed, a high capacity of 689 mA h g−1 can be obtained at 5.0 A g−1. This superior lithium storage performance of S, N co-doped carbon make it as a promising low-cost and sustainable anode for high performance lithium ion batteries.

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

International Nuclear Information System (INIS)

Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

2010-01-01

The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

L-lactic acid and sodium p-toluenesulfonate co-doped polypyrrole for high performance cathode in sodium ion battery

Science.gov (United States)

Liao, Qishu; Hou, Hongying; Liu, Xianxi; Yao, Yuan; Dai, Zhipeng; Yu, Chengyi; Li, Dongdong

2018-04-01

In this work, polypyrrole (PPy) was co-doped with L-lactic acid (LA) and sodium p-toluenesulfonate (TsONa) for high performance cathode in sodium ion battery (SIB) via facile one-step electropolymerization on Fe foil. The as-synthesized LA/TsONa co-doped PPy cathode was investigated in terms of scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), galvanostatic charge/discharge and cyclic voltammetry (CV). The results suggested that some oval-bud-like LA/TsONa co-doped PPy particles did form and tightly combine with the surface of Fe foil; furthermore, LA/TsONa co-doped PPy cathode also delivered higher electrochemical performances than TsONa mono-doped PPy cathode. For example, the initial specific discharge capacity was as high as about 124 mAh/g, and the reversible specific capacity still maintained at about 110 mAh/g even after 50 cycles, higher than those of TsONa mono-doped PPy cathode. The synergy effect of multi components of LA/TsONa co-doped PPy cathode should be responsible for high electrochemical performances.

The POSEIDON Project

International Nuclear Information System (INIS)

Benoit, Ph.

2009-01-01

Concerns about clean air and global warming led car manufacturers to develop hybrid cars. A few models already reached the market but the manufacturers anticipate that the production figure will hit the million mark at the horizon 2010. Hybrid cars make an extensive use of power electronics, which implies - relatively - large size semi-conductor components. The initial doping of those components is best made by neutron irradiation, which achieves a better doping uniformity than chemical processes. Silicon doping becomes therefore a growing market for a number of research reactors, in supplement to their medical isotopes productions. With the SIDONIE facility in operation since 1992, the doping of silicon is not a new activity in the BR2 reactor. However, SIDONIE is limited to 5 inch diameter ingots whereas the trend is to 6 inch and 8 inch diameter or even 12 inch. The purpose of POSEIDON (POol Side Equipment for Irradiation and DOping of silicon by Neutrons) is to allow the large scale irradiation of 6 inch and 8 inch diameter silicon ingots

Three-Dimensional Porous Nitrogen-Doped NiO Nanostructures as Highly Sensitive NO2 Sensors

Directory of Open Access Journals (Sweden)

Van Hoang Luan

2017-10-01

Full Text Available Nickel oxide has been widely used in chemical sensing applications, because it has an excellent p-type semiconducting property with high chemical stability. Here, we present a novel technique of fabricating three-dimensional porous nitrogen-doped nickel oxide nanosheets as a highly sensitive NO2 sensor. The elaborate nanostructure was prepared by a simple and effective hydrothermal synthesis method. Subsequently, nitrogen doping was achieved by thermal treatment with ammonia gas. When the p-type dopant, i.e., nitrogen atoms, was introduced in the three-dimensional nanostructures, the nickel-oxide-nanosheet-based sensor showed considerable NO2 sensing ability with two-fold higher responsivity and sensitivity compared to non-doped nickel-oxide-based sensors.

Stable high efficiency two-dimensional perovskite solar cells via cesium doping

KAUST Repository

Zhang, Xu

2017-08-15

Two-dimensional (2D) organic-inorganic perovskites have recently emerged as one of the most important thin-film solar cell materials owing to their excellent environmental stability. The remaining major pitfall is their relatively poor photovoltaic performance in contrast to 3D perovskites. In this work we demonstrate cesium cation (Cs) doped 2D (BA)(MA)PbI perovskite solar cells giving a power conversion efficiency (PCE) as high as 13.7%, the highest among the reported 2D devices, with excellent humidity resistance. The enhanced efficiency from 12.3% (without Cs) to 13.7% (with 5% Cs) is attributed to perfectly controlled crystal orientation, an increased grain size of the 2D planes, superior surface quality, reduced trap-state density, enhanced charge-carrier mobility and charge-transfer kinetics. Surprisingly, it is found that the Cs doping yields superior stability for the 2D perovskite solar cells when subjected to a high humidity environment without encapsulation. The device doped using 5% Cs degrades only ca. 10% after 1400 hours of exposure in 30% relative humidity (RH), and exhibits significantly improved stability under heating and high moisture environments. Our results provide an important step toward air-stable and fully printable low dimensional perovskites as a next-generation renewable energy source.

Evolution of electronic structure in highly charge doped MoS2 compounds

Science.gov (United States)

Bin Subhan, Mohammed; Watson, Matthew; Liu, Zhongkai; Walters, Andrew; Hoesch, Moritz; Howard, Chris; Diamond I05 beamline Collaboration

Transition-metal dichalcogenides (TMDCs) are a group of layered materials that exhibit a rich array of electronic ground states including semiconductivity, metallicity, superconductivity and charge density waves. In recent years, 2D TMDCs have attracted considerable attention due to their unique properties and potential applications in optoelectronics. It has been shown that the charge carrier density in few layer MoS2 can be tunably increased via electrostatic gating. At high levels of doping, MoS2 exhibits superconductivity with a dome-like dependence of Tc on doping analogous to that found in the cuprate superconductors. High doping can also be achieved via intercalation of alkali metals in bulk MoS2. The origin of this superconductivity is not yet fully understood with predictions ranging from exotic pairing mechanisms in bulk systems to Ising superconductivity in single layers. Despite these interesting properties, there has been limited research to date on the electronic structure of these doped compounds. Here we present our work on alkali metal intercalated MoS2 using the low temperature metal ammonia solution method. Using X-ray diffraction, Raman spectroscopy and ARPES measurements we will discuss the physical and electronic structure of these materials. EPSRC, Diamond Light Source.

A high-performance supercapacitor electrode based on N-doped porous graphene

Science.gov (United States)

Dai, Shuge; Liu, Zhen; Zhao, Bote; Zeng, Jianhuang; Hu, Hao; Zhang, Qiaobao; Chen, Dongchang; Qu, Chong; Dang, Dai; Liu, Meilin

2018-05-01

The development of high-performance supercapacitors (SCs) often faces some contradictory and competing requirements such as excellent rate capability, long cycling life, and high energy density. One effective strategy is to explore electrode materials of high capacitance, electrode architectures of fast charge and mass transfer, and electrolytes of wide voltage window. Here we report a facile and readily scalable strategy to produce high-performance N-doped graphene with a high specific capacitance (∼390 F g-1). A symmetric SC device with a wide voltage window of 3.5 V is also successfully fabricated based on the N-doped graphene electrode. More importantly, the as-assembled symmetric SC delivers a high energy density of 55 Wh kg-1 at a power density of 1800 W kg-1 while maintaining superior cycling life (retaining 96.6% of the initial capacitance after 20,000 cycles). Even at a power density as high as 8800 W kg-1, it still retains an energy density of 29 Wh kg-1, higher than those of previously reported graphene-based symmetric SCs.

First-principles study on the effect of high In doping on the conductivity of ZnO

International Nuclear Information System (INIS)

Hou Qing-Yu; Li Ji-Jun; Ying Chun; Zhao Chun-Wang; Zhao Er-Jun; Zhang Yue

2013-01-01

Based on the density functional theory (DFT), using first-principles plane-wave ultrasoft pseudopotential method, the models of the unit cell of pure ZnO and two highly In-doped supercells of Zn 0.9375 In 0.0625 O and Zn 0.875 In 0.125 O are constructed, and the geometry optimizations of the three models are carried out. The total density of states (DOS) and the band structures (BS) are also calculated. The calculation results show that in the range of high doping concentration, when the doping concentration is hihger than a specific value, the conductivity decreases with the increase of the doping concentration of In in ZnO, which is in consistence with the change trend of the experimental results

Operational maneuvers and pipelines activities repairs for the 32 inches scraper tool recovering

Energy Technology Data Exchange (ETDEWEB)

Valdivia, Jose; Salguero, Luis; Villanueva, Pedro [Compania Operadora del Gas Amazonas, Lima (Peru)

2009-07-01

Transportadora de Gas del Peru and the Compania Operadora de Gas del Amazonas, responsible companies of the transport, operation and maintenance of the pipelines who transport natural gas and natural gas liquids respectively of the Camisea Project - Peru, following the internal policies and the maintenance plan of the pipeline transportation system was planned the activities for the internal pipeline inspection of these activities for 729.3 Km of natural gas pipeline covering diameters of 32 inches, 24 inches and 18 inches. After the first run of the cleaning tool, was scheduled the launch of the dummy scraper (scraper tool) along to the first 210 Km of the 32 inches natural gas pipeline , given changes in elevation along the trace and the low flow of transport. This scraper tool could not reach the final destination. After many series operational maneuvers as venting, creation of differential pressure in valves, the scraper tool only reach the first 75 Km of the trace. After an exhaustive analysis of trending pressure variations, it was concluded that this scraper showed intermittent progress of short durations, concluding that this scraper had not reach the next check point. In this way was decided to conduct operational maneuvers in order to locate, relocated and retrieve the scrapper tool from de 32 inches natural gas pipeline. (author)

Progress in Electron Beam Mastering of 100 Gbit/inch2 Density Disc

Science.gov (United States)

Takeda, Minoru; Furuki, Motohiro; Yamamoto, Masanobu; Shinoda, Masataka; Saito, Kimihiro; Aki, Yuichi; Kawase, Hiroshi; Koizumi, Mitsuru; Miyokawa, Toshiaki; Mutou, Masao; Handa, Nobuo

2004-07-01

We developed an electron beam recorder (EBR) capable of recording master discs under atmospheric conditions using a novel differential pumping head. Using the EBR and optimized fabrication process for Si-etched discs with reactive ion etching (RIE), a bottom signal jitter of 9.6% was obtained from a 36 Gbit/inch2 density disc, readout using a near-field optical pickup with an effective numerical aperture (NA) of 1.85 and a wavelength of 405 nm. We also obtained the eye patterns from a 70 Gbit/inch2 density disc readout using an optical pickup with a 2.05 NA and the same wavelength, and showed almost the same modulation ratio as the simulation value. Moreover, the capability of producing pit patterns corresponding to a 104 Gbit/inch2 density is demonstrated.

Methanesulfonic acid-assisted synthesis of N/S co-doped hierarchically porous carbon for high performance supercapacitors

Science.gov (United States)

Huo, Silu; Liu, Mingquan; Wu, Linlin; Liu, Mingjie; Xu, Min; Ni, Wei; Yan, Yi-Ming

2018-05-01

Nitrogen and sulfur co-doped carbons are considered as electrode materials for high performance supercapacitors, while their further development is still limited by complicated synthesis procedure, unsatisfied structure and low energy density. Developing a simple synthetic strategy to obtain rationally structured carbon materials and high supercapacitor performance is remaining a grand challenge. Herein, we describe the synthesis of nitrogen and sulfur co-doped hierarchical porous carbons as high performance supercapacitors electrode by a methanesulfonic acid-assisted one-step carbonization and activation of the freeze-dried precursors mixture. The as-prepared carbon material not only exhibits ideally hierarchical pores, but also realizes uniform nitrogen and sulfur co-doping. In 6.0 M KOH electrolyte, the material can achieve a high specific capacitance of 272 F g-1 at 1.0 A g-1 and a promising rate performance retaining 172 F g-1 even at 100 A g-1. Moreover, a fabricated symmetric supercapacitor based on as-prepared nitrogen and sulfur co-doped hierarchical porous carbon delivers high energy densities of 12.4 W h kg-1 and 8.0 W h kg-1 in 6.0 M KOH liquid and KOH/PVA solid-state electrolytes, respectively. This work presents a simple and effective methanesulfonic acid-assisted approach for mass production of heteroatomic doping hierarchical porous carbons for future energy storage applications.

Origin of the high p-doping in F intercalated graphene on SiC

KAUST Repository

Cheng, Yingchun

2011-08-04

The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].

Nitrogen-doped graphene-wrapped iron nanofragments for high-performance oxygen reduction electrocatalysts

Energy Technology Data Exchange (ETDEWEB)

Lee, Jang Yeol [Korea Institute of Science and Technology, Photo-Electronic Hybrid Research Center (Korea, Republic of); Kim, Na Young [Korea Institute of Science and Technology, Fuel Cell Research Center (Korea, Republic of); Shin, Dong Yun [Chungbuk National University, Department of Environmental Engineering (Korea, Republic of); Park, Hee-Young [Korea Institute of Science and Technology, Fuel Cell Research Center (Korea, Republic of); Lee, Sang-Soo [Korea Institute of Science and Technology, Photo-Electronic Hybrid Research Center (Korea, Republic of); Joon Kwon, S. [Korea Institute of Science and Technology, Nanophotonics Research Center (Korea, Republic of); Lim, Dong-Hee [Chungbuk National University, Department of Environmental Engineering (Korea, Republic of); Bong, Ki Wan [Korea University, Department of Chemical and Biological Engineering (Korea, Republic of); Son, Jeong Gon, E-mail: jgson@kist.re.kr [Korea Institute of Science and Technology, Photo-Electronic Hybrid Research Center (Korea, Republic of); Kim, Jin Young, E-mail: jinykim@kist.re.kr [Korea Institute of Science and Technology, Fuel Cell Research Center (Korea, Republic of)

2017-03-15

Transition metals, such as iron (Fe)- or cobalt (Co)-based nanomaterials, are promising electrocatalysts for oxygen reduction reactions (ORR) in fuel cells due to their high theoretical activity and low cost. However, a major challenge to using these metals in place of precious metal catalysts for ORR is their low efficiency and poor stability, thus new concepts and strategies should be needed to address this issue. Here, we report a hybrid aciniform nanostructures of Fe nanofragments embedded in thin nitrogen (N)-doped graphene (Fe@N-G) layers via a heat treatment of graphene oxide-wrapped iron oxide (Fe{sub 2}O{sub 3}) microparticles with melamine. The heat treatment leads to transformation of Fe{sub 2}O{sub 3} microparticles to nanosized zero-valent Fe fragments and formation of core-shell structures of Fe nanofragments and N-doped graphene layers. Thin N-doped graphene layers massively promote electron transfer from the encapsulated metals to the graphene surface, which efficiently optimizes the electronic structure of the graphene surface and thereby triggers ORR activity at the graphene surface. With the synergistic effect arising from the N-doped graphene and Fe nanoparticles with porous aciniform nanostructures, the Fe@N-G hybrid catalyst exhibits high catalytic activity, which was evidenced by high E{sub 1/2} of 0.82 V, onset potential of 0.93 V, and limiting current density of 4.8 mA cm{sup −2} indicating 4-electron ORR, and even exceeds the catalytic stability of the commercial Pt catalyst.

Superconductivity. Quasiparticle mass enhancement approaching optimal doping in a high-T(c) superconductor.

Science.gov (United States)

Ramshaw, B J; Sebastian, S E; McDonald, R D; Day, James; Tan, B S; Zhu, Z; Betts, J B; Liang, Ruixing; Bonn, D A; Hardy, W N; Harrison, N

2015-04-17

In the quest for superconductors with higher transition temperatures (T(c)), one emerging motif is that electronic interactions favorable for superconductivity can be enhanced by fluctuations of a broken-symmetry phase. Recent experiments have suggested the existence of the requisite broken-symmetry phase in the high-T(c) cuprates, but the impact of such a phase on the ground-state electronic interactions has remained unclear. We used magnetic fields exceeding 90 tesla to access the underlying metallic state of the cuprate YBa2Cu3O(6+δ) over a wide range of doping, and observed magnetic quantum oscillations that reveal a strong enhancement of the quasiparticle effective mass toward optimal doping. This mass enhancement results from increasing electronic interactions approaching optimal doping, and suggests a quantum critical point at a hole doping of p(crit) ≈ 0.18. Copyright © 2015, American Association for the Advancement of Science.

Highly efficient green light harvesting from Mg doped ZnO nanoparticles: Structural and optical studies

Energy Technology Data Exchange (ETDEWEB)

Sharma, Sarla, E-mail: mail2sarlasharma@gmail.com [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Vyas, Rishi [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Sharma, Neha [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Singh, Vidyadhar [Okinawa Institute of Science and Technology, Graduate University, Okinawa 9040495 (Japan); Singh, Arvind [Department of Physics, Institute of Chemical Technology, Mumbai 400 019 (India); Kataria, Vanjula; Gupta, Bipin Kumar [National Physical Laboratory (CSIR), New Delhi 110012 (India); Vijay, Y.K. [Department of Physics, University of Rajasthan, Jaipur 302055 (India)

2013-03-05

Graphical abstract: Demonstration of highly efficient green light emission harvesting from Mg doped ZnO nanoparticles were synthesized via facile wet chemical route with an average particle size ∼15 nm. The resulted nanoparticles exhibit intense green emission peaking at 530 nm upon 325 nm excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg and beyond it exhibits a decrees in emission. The obtained highly luminescent green emission of ZnO nanoparticle would be an ultimate choice for next generation optoelectronics device materials. Highlights: ► Zn{sub 1−x}Mg{sub x}O nanoparticles were prepared by mechanochemical processing. ► High blue emission intensity was observed contrary to previous reports. ► Blue emission is suggested to be originating from the high density of defects. ► Defect density in as-milled condition is very high resulting in high emission. ► Mg promoted non-radiative recombination and lowered intensities. -- Abstract: Highly efficient green light emission was observed from Mg doped ZnO nanoparticles synthesized via facile wet chemical route with an average particle size ∼15 nm. The XRD analysis confirmed the growth of wurtzite phase of ZnO nanoparticles. Moreover, the optical properties of these nanoparticles were investigated by different spectroscopic techniques. The resulted nanoparticles exhibit intense green emission peaking at 530 nm (2.34 eV) upon 325 nm (3.81 eV) excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg, and beyond it exhibits a decrees in emission. Furthermore, by varying the band gap from 3.50 to 3.61 eV, the PL spectra showed a near band edge (NBE) emission at wavelength around 370 nm (3.35 eV) and a broad deep level emission in the visible region. The obtained highly

Doping Lanthanide into Perovskite Nanocrystals: Highly Improved and Expanded Optical Properties.

Science.gov (United States)

Pan, Gencai; Bai, Xue; Yang, Dongwen; Chen, Xu; Jing, Pengtao; Qu, Songnan; Zhang, Lijun; Zhou, Donglei; Zhu, Jinyang; Xu, Wen; Dong, Biao; Song, Hongwei

2017-12-13

Cesium lead halide (CsPbX 3 ) perovskite nanocrystals (NCs) have demonstrated extremely excellent optical properties and great application potentials in various optoelectronic devices. However, because of the anion exchange, it is difficult to achieve white-light and multicolor emission for practical applications. Herein, we present the successful doping of various lanthanide ions (Ce 3+ , Sm 3+ , Eu 3+ , Tb 3+ , Dy 3+ , Er 3+ , and Yb 3+ ) into the lattices of CsPbCl 3 perovskite NCs through a modified hot-injection method. For the lanthanide ions doped perovskite NCs, high photoluminescence quantum yield (QY) and stable and widely tunable multicolor emissions spanning from visible to near-infrared (NIR) regions are successfully obtained. This work indicates that the doped perovskite NCs will inherit most of the unique optical properties of lanthanide ions and deliver them to the perovskite NC host, thus endowing the family of perovskite materials with excellent optical, electric, or magnetic properties.

Doped polymer electrodes for high performance ferroelectric capacitors on plastic substrates

KAUST Repository

Khan, M. A.; Bhansali, Unnat Sampatraj; Zhang, Xixiang; Saleh, Moussa M.; Odeh, Ihab; Alshareef, Husam N.

2012-01-01

classical ferroelectric and dielectric responses, including series resistance effects. The improved device characteristics obtained using highly conducting doped PEDOT:PSS suggest that it may be used both as an electrode and as global interconnect for all

Highly doped InP as a low loss plasmonic material for mid-IR region.

Science.gov (United States)

Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

2016-12-12

We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

Comparison of silicon strip tracker module size using large sensors from 6 inch wafers

CERN Multimedia

Honma, Alan

1999-01-01

Two large silicon strip sensor made from 6 inch wafers are placed next to each other to simulate the size of a CMS outer silicon tracker module. On the left is a prototype 2 sensor CMS inner endcap silicon tracker module made from 4 inch wafers.

Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-Tc superconductors

International Nuclear Information System (INIS)

Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P; Schmitt, F; Meevasana, W; Motoyama, E M; Lu, D H; Kim, C; Scalettar, R T

2009-01-01

Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

Fabrication of lanthanum-doped thorium dioxide by high-energy ball milling and spark plasma sintering

Energy Technology Data Exchange (ETDEWEB)

Scott, Spencer M.; Yao, Tiankai [Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180 (United States); Lu, Fengyuan [Department of Mechanical & Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803 (United States); Xin, Guoqing; Zhu, Weiguang [Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180 (United States); Lian, Jie, E-mail: lianj@rpi.edu [Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180 (United States)

2017-03-15

Abstract: High-energy ball milling was used to synthesize Th{sub 1-x}La{sub x}O{sub 2-0.5x} (x = 0.09, 0.23) solid solutions, as well as improve the sinterability of ThO{sub 2} powders. Dense La-doped ThO{sub 2} pellets with theoretical density above 94% were consolidated by spark plasma sintering at temperatures above 1400 °C for 20 min, and the densification behavior and the non-equilibrium effects on phase and structure were investigated. A lattice contraction of the SPS-densified pellets occurred with increasing ball milling duration, and a secondary phase with increased La-content was observed in La-doped pellets. A dependence on the La-content and sintering duration for the onset of localized phase segregation has been proposed. The effects of high-energy ball milling, La-content, and phase formation on the thermal diffusivity were also studied for La-doped ThO{sub 2} pellets by laser flash measurement. Increasing La-content and high energy ball milling time decreases thermal diffusivity; while the sintering peak temperature and holding time beyond 1600 °C dramatically altered the temperature dependence of the thermal diffusivity beyond 600 °C. - Highlights: • Lanthanum incorporation into ThO{sub 2} by high energy ball milling and rapid consolidation by spark plasma sintering. • Elucidation of phase behavior of the La-doped ThO{sub 2} and the contributions of La incorporation and SPS sintering conditions. • Investigation of the effects of La incorporation and high energy ball milling on the thermal behavior of La-doped ThO{sub 2}.

High-quality ZnO growth, doping, and polarization effect

Science.gov (United States)

Kun, Tang; Shulin, Gu; Jiandong, Ye; Shunming, Zhu; Rong, Zhang; Youdou, Zheng

2016-03-01

The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding (1) the development of high-quality epitaxy techniques, (2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and (3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk. Project supported by the National Natural Science Foundation of China (Nos. 61025020, 61274058, 61322403, 61504057, 61574075), the Natural Science Foundation of Jiangsu Province (Nos. BK2011437, BK20130013, BK20150585), the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities.

Electrochemical Properties for Co-Doped Pyrite with High Conductivity

Directory of Open Access Journals (Sweden)

Yongchao Liu

2015-09-01

Full Text Available In this paper, the hydrothermal method was adopted to synthesize nanostructure Co-doped pyrite (FeS2. The structural properties and morphology of the synthesized materials were characterized using X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. Co in the crystal lattice of FeS2 could change the growth rate of different crystal planes of the crystal particles, which resulted in various polyhedrons with clear faces and sharp outlines. In addition, the electrochemical performance of the doping pyrite in Li/FeS2 batteries was evaluated using the galvanostatic discharge test, cyclic voltammetry and electrochemical impedance spectroscopy. The results showed that the discharge capacity of the doped material (801.8 mAh·g−1 with a doping ratio of 7% was significantly higher than that of the original FeS2 (574.6 mAh·g−1 because of the enhanced conductivity. Therefore, the doping method is potentially effective for improving the electrochemical performance of FeS2.

Mg doping induced high structural quality of sol–gel ZnO nanocrystals: Application in photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Abed, Chayma; Bouzidi, Chaker [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Elhouichet, Habib, E-mail: Habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Tunis 2092 (Tunisia); Gelloz, Bernard [Graduate School of Engineering, Nagoya University, 2-24-16 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Ferid, Mokhtar [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia)

2015-09-15

Highlights: • ZnO nancrystals doped with Mg were prepared from sol–gel method. • Structural and optical properties of ZnO:Mg nanocrystals were investigated. • Good crystalline quality of ZnO nanocrystals was reported after Mg doping. • Good photocatalytic activity of Mg doped ZnO nanocrystals was demonstrated under sun light illumination. - Abstract: Undoped and Mg doped ZnO nanocrystals (NCs) ZnO:x%Mg (x = 1, 2, 3, and 5) were synthesized using sol–gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman spectroscopy, diffuse reflectivity, and photoluminescence (PL). XRD analysis demonstrates that all prepared samples present pure hexagonal wurtzite structure without any Mg related phases. The NCs size varies from 26.82 nm to 42.96 nm with Mg concentrations; it presents an optimal value for 2% of Mg. The Raman spectra are dominated by the E{sub 2high} mode. For highly Mg doping (5%), the occurrence of silent B{sub 1(low)} mode suggested that the Mg ions do substitute at Zn sites in the ZnO lattice The band gap energy was estimated from both Tauc and Urbach methods and found to be 3.39 eV for ZnO:2%Mg. The PL spectra exhibit two emission bands in the UV and visible range. Their evolution with Mg doping reveals the reduction of defect density in ZnO at low Mg doping by filling Zn vacancies. In addition, it was found that further Mg doping, above 2%, improves the photocatalytic activity of ZnO NCs for photodegradation of Rhodamine B (RhB) under sunlight irradiation. The efficient electron–hole separation is the main factor responsible for the enhancement of photocatalytic performance of Mg doped ZnO NCs. Through this work, we show that by varying the Mg contents in ZnO, this material can be a potential candidate for both optoelectronic and photocatalytic applications.

Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

Science.gov (United States)

Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

2018-02-01

Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

Thermo-optical effects in high-power Ytterbium-doped fiber amplifiers

DEFF Research Database (Denmark)

Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

2011-01-01

We investigate the effect of temperature gradients in high-power Yb-doped fiber amplifiers by a numerical beam propagation model, which takes thermal effects into account in a self-consistent way. The thermally induced change in the refractive index of the fiber leads to a thermal lensing effect...

Cobalt-Doped Nickel Phosphite for High Performance of Electrochemical Energy Storage.

Science.gov (United States)

Li, Bing; Shi, Yuxin; Huang, Kesheng; Zhao, Mingming; Qiu, Jiaqing; Xue, Huaiguo; Pang, Huan

2018-03-01

Compared to single metallic Ni or Co phosphides, bimetallic Ni-Co phosphides own ameliorative properties, such as high electrical conductivity, remarkable rate capability, upper specific capacity, and excellent cycle performance. Here, a simple one-step solvothermal process is proposed for the synthesis of bouquet-like cobalt-doped nickel phosphite (Ni 11 (HPO 3 ) 8 (OH) 6 ), and the effect of the structure on the pseudocapacitive performance is investigated via a series of electrochemical measurements. It is found that when the cobalt content is low, the glycol/deionized water ratio is 1, and the reaction is under 200 °C for 20 h, the morphology of the sample is uniform and has the highest specific surface area. The cobalt-doped Ni 11 (HPO 3 ) 8 (OH) 6 electrode presents a maximum specific capacitance of 714.8 F g -1 . More significantly, aqueous and solid-state flexible electrochemical energy storage devices are successfully assembled. The aqueous device shows a high energy density of 15.48 mWh cm -2 at the power density of 0.6 KW cm -2 . The solid-state device shows a high energy density of 14.72 mWh cm -2 at the power density of 0.6 KW cm -2 . These excellent performances confirm that the cobalt-doped Ni 11 (HPO 3 ) 8 (OH) 6 are promising materials for applications in electrochemical energy storage devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrabroadband terahertz characterization of highly doped ZnO and ITO

DEFF Research Database (Denmark)

Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

2015-01-01

The broadband complex conductivities of transparent conducting oxides (TCO), namely, aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by using THz-TDS from 0.5 to 18 THz. The complex conductivities were accurately calculated using...

A fundamental self-generated quenching center for lanthanide-doped high-purity solids

International Nuclear Information System (INIS)

Auzel, F.

2002-01-01

An intrinsic self-generated quenching center for lanthanide-doped high-purity solids is presented for transitions, which cannot be quenched by cross-relaxation. This center, in fact a cluster-like pair of active centers, is shown to come from a particular multiphonon-assisted energy transfer between them. Being due to the vibronic properties of the host it cannot be suppressed. Its role in lanthanide first excited states self-quenching is analyzed and a simple mathematical expression is derived. This law is compared with experimental results for self-quenching in Er-doped fluorophosphate glasses

High power operation of cladding pumped holmium-doped silica fibre lasers.

Science.gov (United States)

Hemming, Alexander; Bennetts, Shayne; Simakov, Nikita; Davidson, Alan; Haub, John; Carter, Adrian

2013-02-25

We report the highest power operation of a resonantly cladding-pumped, holmium-doped silica fibre laser. The cladding pumped all-glass fibre utilises a fluorine doped glass layer to provide low loss cladding guidance of the 1.95 µm pump radiation. The operation of both single mode and large-mode area fibre lasers was demonstrated, with up to 140 W of output power achieved. A slope efficiency of 59% versus launched pump power was demonstrated. The free running emission was measured to be 2.12-2.15 µm demonstrating the potential of this architecture to address the long wavelength operation of silica based fibre lasers with high efficiency.

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Energy Technology Data Exchange (ETDEWEB)

Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

Cellular Response to Doping of High Porosity Foamed Alumina with Ca, P, Mg, and Si

Directory of Open Access Journals (Sweden)

Edwin Soh

2015-03-01

Full Text Available Foamed alumina was previously synthesised by direct foaming of sulphate salt blends varying ammonium mole fraction (AMF, foaming heating rate and sintering temperature. The optimal product was produced with 0.33AMF, foaming at 100 °C/h and sintering at 1600 °C. This product attained high porosity of 94.39%, large average pore size of 300 µm and the highest compressive strength of 384 kPa. To improve bioactivity, doping of porous alumina by soaking in dilute or saturated solutions of Ca, P, Mg, CaP or CaP + Mg was done. Saturated solutions of Ca, P, Mg, CaP and CaP + Mg were made with excess salt in distilled water and decanted. Dilute solutions were made by diluting the 100% solution to 10% concentration. Doping with Si was done using the sol gel method at 100% concentration only. Cell culture was carried out with MG63 osteosarcoma cells. Cellular response to the Si and P doped samples was positive with high cell populations and cell layer formation. The impact of doping with phosphate produced a result not previously reported. The cellular response showed that both Si and P doping improved the biocompatibility of the foamed alumina.

POSEIDON project

International Nuclear Information System (INIS)

Benoit, P.

2007-01-01

Concerns about clean air and global warming among their customers led car manufacturers to develop hybrid cars. A few models already reached the market but the manufacturers anticipate that the production figure will hit the million mark at the horizon 2010. Hybrid cars make an extensive use of power electronics, which implies - relatively - large size semi-conductor components. The initial doping of those components is best made by neutron irradiation, which achieves a better doping uniformity than chemical processes. Silicon doping becomes therefore a growing market for a number of research reactors, in supplement to their medical isotopes productions. With the SIDONIE facility in operation since 1992, the doping of silicon is not a new activity at BR2. However, SIDONIE is limited to 5 inch diameter ingots whereas the trend is to 6 inch and 8 inch diameter. The purpose of POSEIDON is to allow the large scale irradiation of 6 inch and 8 inch diameter silicon ingots

Visible luminescence from highly textured Tb{sup 3+} doped RF sputtered zinc oxide films

Energy Technology Data Exchange (ETDEWEB)

Sreedharan, R. Sreeja; Krishnan, R. Reshmi; Bose, R. Jolly; Kavitha, V.S.; Suresh, S. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Vinodkumar, R. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Department of Physics, University College, Thiruvananthapuram, Kerala (India); Sudheer, S.K. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Pillai, V.P. Mahadevan, E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India)

2017-04-15

Highly transparent, luminescent, c-axis oriented Tb{sup 3+} doped ZnO films are prepared by RF magnetron sputtering technique. The structural, morphological, optical and luminescence properties of these films are investigated as a function of Tb{sup 3+} doping concentration by X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry, UV-Visible spectroscopy and photoluminescence spectroscopy. The as-deposited films are found to be highly crystalline with wurtzite hexagonal phase of ZnO. The characteristic features of hexagonal wurtzite structure of ZnO, particularly the appearance of non-polar E{sub 2} modes are easily identified from the Raman spectra of the films. The surface morphology of the films revealed by FESEM and AFM images present a dense distribution of grains. The elemental analysis carried out using energy dispersive X-ray (EDX) spectra confirms the incorporation of Tb{sup 3+} ions in the ZnO lattice. The films are highly transparent in the visible region. Using ellipsometric analysis, the variation of refractive index, dielectric constant and thickness of the films are studied as a function of Tb{sup 3+} doping concentration. The photoluminescence spectra of the Tb{sup 3+} doped ZnO films recorded using an excitation radiation of wavelength 325 nm from a He-Cd laser exhibit visible luminescence ~430, 490, 516 and 542 nm. The origin of visible emissions ~490 and 542 nm in the doped films can be attributed to 5D{sub 4}→7F{sub 6} and 5D{sub 4}→7F{sub 5} transition of Tb{sup 3+} ion respectively. The intensity of the emission at 542 nm is found to be decreasing at higher doping concentration due to concentration quenching effect. The blue emission in the films can be attributed to the electron transition from shallow donor level formed by interstitial Zn atoms to the top of the valence band. The origin of the visible emission ~516 nm is attributed

Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

Science.gov (United States)

Mania, E.; Alencar, A. B.; Cadore, A. R.; Carvalho, B. R.; Watanabe, K.; Taniguchi, T.; Neves, B. R. A.; Chacham, H.; Campos, L. C.

2017-09-01

Steady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p-type) up to n ~ 2.2  ×  1013 cm-2 while providing excellent charge mobility (μ ~ 25 000 cm2 V-1 s-1). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B  =  0.4 T) at T  =  4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping.

Nitrogen-doped graphene forests as electrodes for high-performance wearable supercapacitors

International Nuclear Information System (INIS)

Wang, Mei; Ma, Yifei

2017-01-01

Highlights: •N-doped graphene forest (GF) is successfully synthesized by in-situ PECVD process. •Morphology of N-doped GF electrode realizes a better in-plane electron transfer. •Areal and volumetric capacitances increase 26% and 89% by the N-doping of GF. •Energy and power densities increase 87% and 50% by the N-doping of GF. •The N-doped GF-based EDLC shows excellent bendability and reliable durability. -- Abstract: Recently, a graphene forest (GF) is synthesized by a plasma enhanced chemical vapor deposition (PECVD) process, which subverts the stereotyped morphology of vertical graphene. The GF is demonstrated to possess excellent performance in flexible and bendable electrical double-layer capacitors (EDLCs). In this work, synthesis process of the GF has been optimized and N-doped GF is successfully achieved by introducing NH 3 as the nitrogen precursor during the PECVD process. The N-doping obviously affects the morphology of the GF and the in-plane conductivity of GF is desirably enhanced. The specific area capacitances and volumetric capacitances of N-doped GF-based EDLC increases 26% and 89% in average, respectively, at different current densities compared with the non-doped GF-based EDLC. In addition, both the energy and power densities are improved, and impressively, the energy densities improve 87% by the N-doping of GF electrodes. The GF-based EDLC also provides the desirable stability that no degradation can be observed within 10,000 cycles. Finally, the flexible N-doped GF-based EDLC is also tested as a wearable supercapacitor, exhibiting no capacitance decrease under the dynamic bending situation. Our approach to synthesize the N-doped GF electrodes can achieve the fine-scale nano-structured GF electrodes and provide a new way forward for improved energy storage devices.

Advanced Sulfur Cathode Enabled by Highly Crumpled Nitrogen-Doped Graphene Sheets for High-Energy-Density Lithium-Sulfur Batteries.

Science.gov (United States)

Song, Jiangxuan; Yu, Zhaoxin; Gordin, Mikhail L; Wang, Donghai

2016-02-10

Herein, we report a synthesis of highly crumpled nitrogen-doped graphene sheets with ultrahigh pore volume (5.4 cm(3)/g) via a simple thermally induced expansion strategy in absence of any templates. The wrinkled graphene sheets are interwoven rather than stacked, enabling rich nitrogen-containing active sites. Benefiting from the unique pore structure and nitrogen-doping induced strong polysulfide adsorption ability, lithium-sulfur battery cells using these wrinkled graphene sheets as both sulfur host and interlayer achieved a high capacity of ∼1000 mAh/g and exceptional cycling stability even at high sulfur content (≥80 wt %) and sulfur loading (5 mg sulfur/cm(2)). The high specific capacity together with the high sulfur loading push the areal capacity of sulfur cathodes to ∼5 mAh/cm(2), which is outstanding compared to other recently developed sulfur cathodes and ideal for practical applications.

3D Polyaniline Architecture by Concurrent Inorganic and Organic Acid Doping for Superior and Robust High Rate Supercapacitor Performance

Science.gov (United States)

Gawli, Yogesh; Banerjee, Abhik; Dhakras, Dipti; Deo, Meenal; Bulani, Dinesh; Wadgaonkar, Prakash; Shelke, Manjusha; Ogale, Satishchandra

2016-02-01

A good high rate supercapacitor performance requires a fine control of morphological (surface area and pore size distribution) and electrical properties of the electrode materials. Polyaniline (PANI) is an interesting material in supercapacitor context because it stores energy Faradaically. However in conventional inorganic (e.g. HCl) acid doping, the conductivity is high but the morphological features are undesirable. On the other hand, in weak organic acid (e.g. phytic acid) doping, interesting and desirable 3D connected morphological features are attained but the conductivity is poorer. Here the synergy of the positive quality factors of these two acid doping approaches is realized by concurrent and optimized strong-inorganic (HCl) and weak-organic (phytic) acid doping, resulting in a molecular composite material that renders impressive and robust supercapacitor performance. Thus, a nearly constant high specific capacitance of 350 F g-1 is realized for the optimised case of binary doping over the entire range of 1 A g-1 to 40 A g-1 with stability of 500 cycles at 40 A g-1. Frequency dependant conductivity measurements show that the optimized co-doped case is more metallic than separately doped materials. This transport property emanates from the unique 3D single molecular character of such system.

3D Polyaniline Architecture by Concurrent Inorganic and Organic Acid Doping for Superior and Robust High Rate Supercapacitor Performance.

Science.gov (United States)

Gawli, Yogesh; Banerjee, Abhik; Dhakras, Dipti; Deo, Meenal; Bulani, Dinesh; Wadgaonkar, Prakash; Shelke, Manjusha; Ogale, Satishchandra

2016-02-12

A good high rate supercapacitor performance requires a fine control of morphological (surface area and pore size distribution) and electrical properties of the electrode materials. Polyaniline (PANI) is an interesting material in supercapacitor context because it stores energy Faradaically. However in conventional inorganic (e.g. HCl) acid doping, the conductivity is high but the morphological features are undesirable. On the other hand, in weak organic acid (e.g. phytic acid) doping, interesting and desirable 3D connected morphological features are attained but the conductivity is poorer. Here the synergy of the positive quality factors of these two acid doping approaches is realized by concurrent and optimized strong-inorganic (HCl) and weak-organic (phytic) acid doping, resulting in a molecular composite material that renders impressive and robust supercapacitor performance. Thus, a nearly constant high specific capacitance of 350 F g(-1) is realized for the optimised case of binary doping over the entire range of 1 A g(-1) to 40 A g(-1) with stability of 500 cycles at 40 A g(-1). Frequency dependant conductivity measurements show that the optimized co-doped case is more metallic than separately doped materials. This transport property emanates from the unique 3D single molecular character of such system.

NO PLIF imaging in the CUBRC 48-inch shock tunnel

Science.gov (United States)

Jiang, N.; Bruzzese, J.; Patton, R.; Sutton, J.; Yentsch, R.; Gaitonde, D. V.; Lempert, W. R.; Miller, J. D.; Meyer, T. R.; Parker, R.; Wadham, T.; Holden, M.; Danehy, P. M.

2012-12-01

Nitric oxide planar laser-induced fluorescence (NO PLIF) imaging is demonstrated at a 10-kHz repetition rate in the Calspan University at Buffalo Research Center's (CUBRC) 48-inch Mach 9 hypervelocity shock tunnel using a pulse burst laser-based high frame rate imaging system. Sequences of up to ten images are obtained internal to a supersonic combustor model, located within the shock tunnel, during a single ~10-millisecond duration run of the ground test facility. Comparison with a CFD simulation shows good overall qualitative agreement in the jet penetration and spreading observed with an average of forty individual PLIF images obtained during several facility runs.

NO PLIF imaging in the CUBRC 48-inch shock tunnel

Energy Technology Data Exchange (ETDEWEB)

Jiang, N.; Bruzzese, J.; Patton, R.; Sutton, J.; Yentsch, R.; Gaitonde, D.V.; Lempert, W.R. [The Ohio State University, Departments of Mechanical and Aerospace Engineering, Columbus, OH (United States); Miller, J.D.; Meyer, T.R. [Iowa State University, Department of Mechanical Engineering, Ames, IA (United States); Parker, R.; Wadham, T.; Holden, M. [CUBRC, Buffalo, NY (United States); Danehy, P.M. [NASA Langley Research Center, Hampton, VA (United States)

2012-12-15

Nitric oxide planar laser-induced fluorescence (NO PLIF) imaging is demonstrated at a 10-kHz repetition rate in the Calspan University at Buffalo Research Center's (CUBRC) 48-inch Mach 9 hypervelocity shock tunnel using a pulse burst laser-based high frame rate imaging system. Sequences of up to ten images are obtained internal to a supersonic combustor model, located within the shock tunnel, during a single {proportional_to}10-millisecond duration run of the ground test facility. Comparison with a CFD simulation shows good overall qualitative agreement in the jet penetration and spreading observed with an average of forty individual PLIF images obtained during several facility runs. (orig.)

ECR heavy-ion source for the LBL 88-inch cyclotron

International Nuclear Information System (INIS)

Clark, D.J.; Kalnins, J.G.; Lyneis, C.M.

1983-03-01

An Electron Cyclotron Resonance (ECR) heavy-ion source is under construction at the LBL 88-Inch Cyclotron. This source will produce very-high-charge-state heavy ions, such as 0 8 + and Ar 12 + , which will increase cyclotron energies by a factor of 2-4, up to A = 80. It is a two-stage source using room-temperature coils, a permanent-magnet sextupole, and a 6-9 GHz microwave system. Design features include adjustable first-to-second-stage plasma coupling, a variable second-stage mirror ratio, high-conductance radial pumping of the second stage, and a beam-diagnostic system. A remotely movable extraction electrode will optimize extraction efficiency. The project includes construction of a transport line and improvements to the cyclotron axial-injection system. The construction period is expected to be two years

Highly improved ethanol gas-sensing performance of mesoporous nickel oxides nanowires with the stannum donor doping

Science.gov (United States)

Wei, Junqi; Li, Xiaoqing; Han, Yanbing; Xu, Jingcai; Jin, Hongxiao; Jin, Dingfeng; Peng, Xiaoling; Hong, Bo; Li, Jing; Yang, Yanting; Ge, Hongliang; Wang, Xinqing

2018-06-01

Mesoporous nickel oxides (NiO) and stannum(Sn)-doped NiO nanowires (NWs) were synthesized by using SBA-15 templates with the nanocasting method. X-ray diffraction, transmission electron microscope, energy dispersive spectrometry, nitrogen adsorption/desorption isotherm and UV–vis spectrum were used to characterize the phase structure, components and microstructure of the as-prepared samples. The gas-sensing analysis indicated that the Sn-doping could greatly improve the ethanol sensitivity for mesoporous NiO NWs. With the increasing Sn content, the ethanol sensitivity increased from 2.16 for NiO NWs up to the maximum of 15.60 for Ni0.962Sn0.038O1.038, and then decreased to 12.24 for Ni0.946Sn0.054O1.054 to 100 ppm ethanol gas at 340 °C. The high surface area from the Sn-doping improved the adsorption of oxygen on the surface of NiO NWs, resulting in the smaller surface resistance in air. Furthermore, owing to the recombination of the holes in hole-accumulation lay with the electrons from the donor impurity level and the increasing the body defects for Sn-doping, the total resistance in ethanol gas enhanced greatly. It was concluded that the sensitivity of Sn-doped NiO NWs based sensor could be greatly improved by the higher surface area and high-valence donor substitution from Sn-doping.

High spin state driven magnetism and thermoelectricity in Mn doped topological insulator Bi2Se3

Science.gov (United States)

Maurya, V. K.; Dong, C. L.; Chen, C. L.; Asokan, K.; Patnaik, S.

2018-06-01

We report on the synthesis, and structural - magnetic characterizations of Mn doped Bi2Se3 towards achieving a magnetically doped topological insulator. High quality single crystals of MnxBi2-xSe3 (x = 0, 0.03, 0.05, 0.1) are grown and analysed by X-ray diffraction (XRD), Low Energy Electron Diffraction (LEED), Scanning electron microscopy (SEM), and X-ray absorption near-edge structure spectroscopy (XANES). Magnetic properties of these samples under ZFC-FC protocol and isothermal magnetization confirm ferromagnetic correlation above x = 0.03 value. XANES measurements confirm that the dopant Mn is in Mn2+ state. This is further reconfirmed to be in high spin state by fitting magnetic data with Brillouin function for J = 5/2. Both Hall and Seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of Mn doping. We propose Mn doped Bi2Se3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.

Doping of GaN{sub 1-x}As{sub x} with high As content

Energy Technology Data Exchange (ETDEWEB)

Levander, A.X.; Novikov, S.V.; Liliental-Weber, Z.; dos Reis, R.; Dubon, O.D.; Wu, J.; Foxon, C.T.; Yu, K.M.; Walukiewicz, W.

2011-09-22

Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.

Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

Energy Technology Data Exchange (ETDEWEB)

Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V. [Ioffe Institute of the Russian Academy of Sciences, St. Petersburg (Russian Federation)

2014-08-20

A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

Nitrogen-doped hierarchical porous carbon materials prepared from meta-aminophenol formaldehyde resin for supercapacitor with high rate performance

International Nuclear Information System (INIS)

Zhou, Jin; Zhang, Zhongshen; Xing, Wei; Yu, Jing; Han, Guoxing; Si, Weijiang; Zhuo, Shuping

2015-01-01

Graphical abstract: N-doped hierarchical porous carbons with high rate capacitive performance are prepared by a combination method of nano-SiO 2 template/KOH activation. - Highlights: • A mass produced nano-SiO 2 is used to prepared hierarchical porous carbon. • N-doped hierarchical porous carbon materials are easily prepared. • The NHPCs materials exhibit a very high capacitance of up to 260.5 F g −1 . • The NHPC-800 sample shows very high rate capability. • Hierarchical porosity and N-doping synergistically enhances the whole capacitance. - Abstract: In this work, nitrogen-doped hierarchical porous carbon materials (NHPCs) are prepared by a two-step method combined of a hard template process and KOH-activation treatment. Low cost and large-scale commercial nano-SiO 2 are used as a hard template. The hierarchical porosity, structure and nitrogen-doped surface chemical properties are proved by a varies of means, such as scanning electron microscopy, transition electron microscopy, N 2 sorption, Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. When the prepared NHPCs materials are used as the electrode materials for supercapacitors in KOH electrolyte, they exhibit very high specific capacitance, good power capability and excellent cyclic stability. NHPC-800 carbon shows a high capacitance of 114.0 F g −1 at the current density of 40 A g −1 , responding to a high energy and power densities of 4.0 Wh kg −1 and 10 000 W kg −1 , and a very short drain time of 1.4 s. The excellent capacitive performance may be due to the synergistic effect of the hierarchical porosity, high effective surface area and heteroatom doping, resulting in both electrochemical double layer and Faradaic capacitance contributions

Efficient high power 2 micron Tm3+-Doped Fiber Laser, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of new Tm3+ doped germanate glass fibers for efficient high power 2 micron fiber lasers capable of generating an output power of...

High-power Yb-doped continuous-wave and pulsed fibre lasers

Indian Academy of Sciences (India)

2014-01-05

Jan 5, 2014 ... In this article, a review of Yb-doped CW and pulsed fibre lasers along with our study on self-pulsing dynamics in CW fibre lasers to find its role in high-power fibre laser development and the physical ... Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India ...

Facile preparation of nitrogen-doped hierarchical porous carbon with high performance in supercapacitors

International Nuclear Information System (INIS)

Yan, Kun; Kong, Ling-Bin; Shen, Kui-Wen; Dai, Yan-Hua; Shi, Ming; Hu, Bing; Luo, Yong-Chun; Kang, Long

2016-01-01

Graphical abstract: Preparing and activating process of nitrogen-doped hierarchical porous carbon (NHPC). - Highlights: • The well-defined PAN-b-PMMA copolymer was synthesized by atom transfer radical polymerization with narrow molecular weight distribution. • Nitrogen-doped hierarchical porous structure (NHPC) was prepared through a simple carbonization procedure of PAN-b-PMMA precursor. • NHPC possessed hierarchical porous structure with high BET surface area of 257 m"2 g"−"1 and DFT mesopore size of 14.61 nm. • Effects of activation conditions on supercapacitive behavior were systematically studied. - Abstract: The nitrogen-doped hierarchical porous carbon (NHPC) material was successfully prepared through a simple carbonization procedure of well-defined diblock copolymer precursor containing nitrogen-enriched carbon source, i.e., polyacrylonitrile (PAN), and asacrificial block, i.e., polymethylmethacrylate (PMMA). PAN-b-PMMA diblock copolymer was synthesized by atom transfer radical polymeriation (ATRP) with narrow molecular weight distribution. The as-obtained NHPC possessed nitrogen-doped hierarchical porous structure with high BET surface area of 257 m"2 g"−"1 and Nonlocal density functional theory (NLDFT) mesopore size of 14.61 nm. Surface activated nitrogen-doped hierarchical porous carbon (A-NHPC) materials were obtained by subsequent surface activation with HNO_3 solution. The effects of activation conditions on supercapacitive behavior were systematically studied, a maximum specific capacitance of 314 F g"−"1 at a current density of 0.5 A g"−"1 was achieved in 2 M KOH aqueous electrolyte. Simultaneously, it exhibited excellent rate capability of 67.8% capacitance retention as the current density increased from 0.5 to 20 A g"−"1 and superior cycling performance of 90% capacitance retention after 10,000 cycles at the current density of 2 A g"−"1.

Facile preparation of nitrogen-doped hierarchical porous carbon with high performance in supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Yan, Kun [State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China); Kong, Ling-Bin, E-mail: konglb@lut.cn [State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China); School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050 (China); Shen, Kui-Wen; Dai, Yan-Hua; Shi, Ming; Hu, Bing [State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China); Luo, Yong-Chun; Kang, Long [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050 (China)

2016-02-28

Graphical abstract: Preparing and activating process of nitrogen-doped hierarchical porous carbon (NHPC). - Highlights: • The well-defined PAN-b-PMMA copolymer was synthesized by atom transfer radical polymerization with narrow molecular weight distribution. • Nitrogen-doped hierarchical porous structure (NHPC) was prepared through a simple carbonization procedure of PAN-b-PMMA precursor. • NHPC possessed hierarchical porous structure with high BET surface area of 257 m{sup 2} g{sup −1} and DFT mesopore size of 14.61 nm. • Effects of activation conditions on supercapacitive behavior were systematically studied. - Abstract: The nitrogen-doped hierarchical porous carbon (NHPC) material was successfully prepared through a simple carbonization procedure of well-defined diblock copolymer precursor containing nitrogen-enriched carbon source, i.e., polyacrylonitrile (PAN), and asacrificial block, i.e., polymethylmethacrylate (PMMA). PAN-b-PMMA diblock copolymer was synthesized by atom transfer radical polymeriation (ATRP) with narrow molecular weight distribution. The as-obtained NHPC possessed nitrogen-doped hierarchical porous structure with high BET surface area of 257 m{sup 2} g{sup −1} and Nonlocal density functional theory (NLDFT) mesopore size of 14.61 nm. Surface activated nitrogen-doped hierarchical porous carbon (A-NHPC) materials were obtained by subsequent surface activation with HNO{sub 3} solution. The effects of activation conditions on supercapacitive behavior were systematically studied, a maximum specific capacitance of 314 F g{sup −1} at a current density of 0.5 A g{sup −1} was achieved in 2 M KOH aqueous electrolyte. Simultaneously, it exhibited excellent rate capability of 67.8% capacitance retention as the current density increased from 0.5 to 20 A g{sup −1} and superior cycling performance of 90% capacitance retention after 10,000 cycles at the current density of 2 A g{sup −1}.

Progress in efficient doping of high aluminum-containing group III-nitrides

Science.gov (United States)

Liang, Y.-H.; Towe, E.

2018-03-01

The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

Steps in growth of Nb-doped layered titanates with very high surface area suitable for water purification

International Nuclear Information System (INIS)

Milanović, Marija; Nikolić, Ljubica M.; Stijepović, Ivan; Kontos, Athanassios G.; Giannakopoulos, Konstantinos P.

2014-01-01

Nb-doped layered titanates, as highly efficient adsorbents, have been synthesized by hydrothermal reaction for variable duration and at 150 °C in a highly alkaline solution with NbCl 5 as the Nb source. The results have shown the formation of nanosheets already after 1 h of hydrothermal processing, but morphology and phase composition change as the reaction proceeds. The prepared layered titanates have been structurally investigated via scanning and transmission electron microscopy, X-ray diffraction, as well as Raman and Fourier transform infrared spectroscopies. The steps of layered titanate growth have been followed and an intermediate layered anatase phase is identified. Thus optimized growth of mesoporous titanate materials with 10% Nb atomic content present very high specific surface area of 345.3 m 2  g −1 , and perform as very efficient adsorbents for wastewater treatment applications. - Highlights: • Nb-doped layered titanates have been prepared by a hydrothermal procedure. • Introduction of Nb to precursor lowers the rate of layered titanate formation. • Steps in growth of Nb-doped layered titanates are considered. • Nb-doped layered titanates show high/fast MB adsorption from concentrated solution

Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

International Nuclear Information System (INIS)

Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S.

2015-01-01

Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g −1 at 100 mA g −1 after 30th cycles. At high current density value of 1 A g −1 , B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states

Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

Energy Technology Data Exchange (ETDEWEB)

Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

2015-01-15

Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

Improved high-rate charge/discharge performances of LiFePO{sub 4}/C via V-doping

Energy Technology Data Exchange (ETDEWEB)

Sun, C.S.; Zhou, Z.; Xu, Z.G.; Wang, D.G.; Wei, J.P.; Bian, X.K.; Yan, J. [Institute of New Energy Material Chemistry, Nankai University, Tianjin 300071 (China)

2009-09-05

V-doped LiFePO{sub 4}/C cathode materials were prepared through a carbothermal reduction route. The microstructure was characterized by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrochemical Li{sup +} intercalation performances of V-doped LiFePO{sub 4}/C were compared with those of undoped one through galvanostatic intermittent titration technique, cyclic voltamperometry, and electrochemical impedance spectrum. V-doped LiFePO{sub 4}/C showed a high discharge capacity of {proportional_to}70 mAh g{sup -1} at the rate of 20 C (3400 mA g{sup -1}) at room temperature. The significantly improved high-rate charge/discharge capacity is attributed to the increase of Li{sup +} ion ''effective'' diffusion capability. (author)

Gender- and Sport-Specific Associations Between Religiousness and Doping Behavior in High-Level Team Sports.

Science.gov (United States)

Zvan, Milan; Zenic, Natasa; Sekulic, Damir; Cubela, Mladen; Lesnik, Blaz

2017-08-01

Religiousness is known to be specifically associated with substance abuse, but there is an evident lack of studies investigating the association between religiousness and doping behavior as a specific type of substance abuse in athletes. This study aimed to provide evidence for possible gender- and sport-specific associations between religiousness and doping behavior among team-sport athletes of both genders. The participants were 886 athletes (21.9 ± 3.8 years of age; 352 females) involved in four sports: volleyball (n = 154; 78 females), handball (n = 206; 68 females), soccer (n = 316; 110 females) and basketball (n = 230; 96 females) from Croatia and Slovenia (all traditionally Roman Catholics). The data were collected using a previously validated structured questionnaire that examined sociodemographic, sport- and doping-related factors. In addition, religiousness was captured by the Santa Clara Strength of Religious Faith questionnaire (SCSRF). Gender-stratified simple logistic regressions were applied to determine associations between covariates and doping behavior (criterion). There was no significant difference in potential doping behavior between males and females (OR 1.06, 95 % CI 0.76-1.46), while females reported higher religiousness (SCSRF: 23.11 ± 3.23 and 25.46 ± 7.2 for males and females, respectively; t test = 1.82, p sport and age, the SCSRF remained a significant predictor of potential doping behavior (OR 0.95, 95 % CI 0.91-0.99). For males, the belief that doping was present in sport was strongly associated with a higher likelihood of doping. Our results suggest that highly religious females involved in three of the studies sports (i.e., volleyball, handball and basketball) show a weaker tendency toward doping. Meanwhile, there is no evidence that religiousness influences doping behavior among male team-sport athletes. Therefore, sport-specific and gender-specific approach in studying possible relationships that exist

High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

Carbon-doped SnS2 nanostructure as a high-efficiency solar fuel catalyst under visible light.

Science.gov (United States)

Shown, Indrajit; Samireddi, Satyanarayana; Chang, Yu-Chung; Putikam, Raghunath; Chang, Po-Han; Sabbah, Amr; Fu, Fang-Yu; Chen, Wei-Fu; Wu, Chih-I; Yu, Tsyr-Yan; Chung, Po-Wen; Lin, M C; Chen, Li-Chyong; Chen, Kuei-Hsien

2018-01-12

Photocatalytic formation of hydrocarbons using solar energy via artificial photosynthesis is a highly desirable renewable-energy source for replacing conventional fossil fuels. Using an L-cysteine-based hydrothermal process, here we synthesize a carbon-doped SnS 2 (SnS 2 -C) metal dichalcogenide nanostructure, which exhibits a highly active and selective photocatalytic conversion of CO 2 to hydrocarbons under visible-light. The interstitial carbon doping induced microstrain in the SnS 2 lattice, resulting in different photophysical properties as compared with undoped SnS 2 . This SnS 2 -C photocatalyst significantly enhances the CO 2 reduction activity under visible light, attaining a photochemical quantum efficiency of above 0.7%. The SnS 2 -C photocatalyst represents an important contribution towards high quantum efficiency artificial photosynthesis based on gas phase photocatalytic CO 2 reduction under visible light, where the in situ carbon-doped SnS 2 nanostructure improves the stability and the light harvesting and charge separation efficiency, and significantly enhances the photocatalytic activity.

Nano silver diffusion behaviour on conductive polymer during doping process for high voltage application

Science.gov (United States)

Mohammad, A.; Mahmood, A.; Chin, K. T.; Danquah, M. K.; van Stratan, S.

2017-06-01

Conductive polymer had opened a new era of engineering for microelectronics and semiconductor applications. However, it is still a challenge for high voltage applications due to lower electrical conductivity compare to metals. This results tremendous energy losses during transmission and restricts its usage. In order to address such problem a novel method was investigated using nano silver particle doped iodothiophene since silver is the highest electrical conductive material. The experiments were carried out to study the organometallic diffusion behaviour of nanosilver doped iodothiophene with different concentration of iodothiophene. Five different mixing ratio between nanosilver and the solution of iodothiophene dissolved in diethyl ether were used which are 1:1.25, 1:1.5, 1:2.5, 1:3 and l:5. It was revealed that there is an effective threshold concentration of which the nano silver evenly distributed and there was no coagulation observed. These parameters laid the foundation of better doping process between the nano silver and the polymer significantly which would contribute developing conductive polymer towards high voltage application for industries that are vulnerable to corrosive environment.

First thin AC-coupled silicon strip sensors on 8-inch wafers

Energy Technology Data Exchange (ETDEWEB)

Bergauer, T., E-mail: thomas.bergauer@oeaw.ac.at [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Dragicevic, M.; König, A. [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Hacker, J.; Bartl, U. [Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach (Austria)

2016-09-11

The Institute of High Energy Physics (HEPHY) in Vienna and the semiconductor manufacturer Infineon Technologies Austria AG developed a production process for planar AC-coupled silicon strip sensors manufactured on 200 μm thick 8-inch p-type wafers. In late 2015, the first wafers were delivered featuring the world's largest AC-coupled silicon strip sensors. Detailed electrical measurements were carried out at HEPHY, where single strip and global parameters were measured. Mechanical studies were conducted and the long-term behavior was investigated using a climate chamber. Furthermore, the electrical properties of various test structures were investigated to validate the quality of the manufacturing process.

Highly-crystalline ultrathin gadolinium doped and carbon-coated Li4Ti5O12 nanosheets for enhanced lithium storage

Science.gov (United States)

Xu, G. B.; Yang, L. W.; Wei, X. L.; Ding, J. W.; Zhong, J. X.; Chu, P. K.

2015-11-01

Highly-crystalline gadolinium doped and carbon-coated ultrathin Li4Ti5O12 (LTO) nanosheets (denoted as LTO-Gd-C) as an anode material for Li-ion batteries (LIBs) are synthesized on large scale by controlling the amount of carbon precursor in the topotactic transformation of layered ultrathin Li1.81H0.19Ti2O5·xH2O (H-LTO) nanosheets at 700 °C. The characterizations of structure and morphology reveal that the gadolinium doped and carbon-coated ultrathin LTO nanosheets have high crystallinity with a thickness of about 10 nm. Gadolinium doping allows the spinel LTO products to be stabilized, thereby preserving the precursor's sheet morphology and single crystal structure. Carbon encapsulation serves dual functions by restraining crystal growth of the LTO primary nanoparticles in the LTO-Gd-C nanosheets and decreasing the external electron transport resistance. Owing to the synergistic effects rendered by ultrathin nanosheets with high crystallinity, gadolinium doping and carbon coating, the developed ultrathin LTO nanosheets possess excellent specific capacity, cycling performance, and rate capability compared with reference materials, when evaluated as an anode material for lithium ion batteries (LIBs). The simple and effective strategy encompassing nanoscale morphological engineering, surface modification, and doping improves the performance of LTO-based anode materials for high energy density and high power LIBs applied in large scale energy storage.

Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

KAUST Repository

Mansour, Ahmed

2017-05-23

Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

KAUST Repository

Mansour, Ahmed; Kirmani, Ahmad R.; Barlow, Stephen; Marder, Seth R.; Amassian, Aram

2017-01-01

Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

Science.gov (United States)

Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

2017-11-01

In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

International Nuclear Information System (INIS)

Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

2009-01-01

Titanium-doped cadmium oxide thin films were deposited on quartz substrate by pulsed laser deposition technique. The effect of substrate temperature on structural, optical and electrical properties was studied. The films grown at high temperature show (2 0 0) preferred orientation, while films grown at low temperature have both (1 1 1) and (2 0 0) orientation. These films are highly transparent (63-79%) in visible region, and transmittance of the films depends on growth temperature. The band gap of the films varies from 2.70 eV to 2.84 eV for various temperatures. It is observed that resistivity increases with growth temperature after attaining minimum at 150 deg. C, while carrier concentration continuously decreases with temperature. The low resistivity, high transmittance and wide band gap titanium-doped CdO films could be an excellent candidate for future optoelectronic and photovoltaic applications.

Aqueous synthesis of highly luminescent glutathione-capped Mn{sup 2+}-doped ZnS quantum dots

Energy Technology Data Exchange (ETDEWEB)

Kolmykov, Oleksii [Université de Lorraine, Laboratoire Réactions et Génie des Procédés (LRGP), UMR 7274, CNRS, 1 rue Grandville, BP 20451, 54001 Nancy Cedex (France); Coulon, Joël [Université de Lorraine, Laboratoire de Chimie Physique et Microbiologie pour l' Environnement (LCPME), UMR 7564, CNRS, Faculté de Pharmacie, 5 rue Albert Lebrun, 54000 Nancy (France); Lalevée, Jacques [Institut de Science des Matériaux de Mulhouse (IS2M), UMR 7361, CNRS, 15 rue Jean Starcky, 68093 Mulhouse (France); Alem, Halima; Medjahdi, Ghouti [Université de Lorraine, Institut Jean Lamour (IJL), UMR 7198, CNRS, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Schneider, Raphaël, E-mail: raphael.schneider@univ-lorraine.fr [Université de Lorraine, Laboratoire Réactions et Génie des Procédés (LRGP), UMR 7274, CNRS, 1 rue Grandville, BP 20451, 54001 Nancy Cedex (France)

2014-11-01

In this paper, an aqueous-based route has been developed to prepare highly luminescent glutathione (GSH)-capped Mn-doped ZnS quantum dots (QDs). The dots obtained have an average diameter of 4.3 nm and exhibit the Mn{sup 2+}-related orange luminescence with very low surface defect density. The highest photoluminescence was observed for a Mn{sup 2+} to Zn{sup 2+} molar ratio of 3%. Consecutive overcoating of the Mn:ZnS@GSH QDs by a ZnS shell was done, and the core/shell structured QDs exhibit a PL quantum yield of 23%. Transmission electron microscopy, X-ray powder diffraction, electron spin resonance, X-ray photoelectron spectroscopy, UV–visible spectroscopy and spectrofluorometry have been used to characterize the crystal structure, the doping status, and the optical properties of the doped-QDs. Our systematic investigation shows that Mn:ZnS/ZnS@GSH QDs are highly promising fluorescent labels in biological applications.

Highly doped InP as a low loss plasmonic material for mid-IR region

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

2016-01-01

by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom......We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...... interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated...

Investigation on compression behavior of TZM and La{sub 2}O{sub 3} doped TZM Alloys at high temperature

Energy Technology Data Exchange (ETDEWEB)

Hu, Ping, E-mail: huping1985@126.com [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Zhou, Yuhang; Chang, Tian; Yu, Zhitao; Wang, Kuaishe; Yang, Fan; Hu, Boliang [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Cao, Weicheng [Jinduicheng Molybdenum Co., Ltd, Xi’an 710077 (China); Yu, Hailiang [School of Mechanical, Materials, Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2500 (Australia)

2017-02-27

Mechanical properties of Titanium-zirconium-molybdenum (TZM) and La{sub 2}O{sub 3} doped TZM alloys under compression were tested at 1000 °C and 1200 °C. Microstructure of TZM and La{sub 2}O{sub 3} doped TZM alloys after compressing was characterized by scanning electron microscopy. The effects on La{sub 2}O{sub 3} doping on the high temperature deformation behavior and microstructure evolution of the TZM alloy were analyzed. Results show that La{sub 2}O{sub 3} doping can refine the grain size of TZM alloy. La{sub 2}O{sub 3} doping changes fracture model of TZM alloy. TZM alloy exhibits mainly intergranular fracture, while the La{sub 2}O{sub 3} doped TZM alloy exhibits both intergranular and transgranular fracture mode.

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

Science.gov (United States)

Kurose, Noriko; Matsumoto, Kota; Yamada, Fumihiko; Roffi, Teuku Muhammad; Kamiya, Itaru; Iwata, Naotaka; Aoyagi, Yoshinobu

2018-01-01

A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a confined local area. The transition from an insulating to a p-type area is realized to take place within about 1-2 μm fine resolution. The results show that the technique can be applied in fabricating the devices such as vertical field effect transistors, vertical bipolar transistors and vertical Schottkey diode so on with a current confinement region using a p-type carrier-blocking layer formed by this technique.

Fabrication of high-performance fluorine doped-tin oxide film using flame-assisted spray deposition

Energy Technology Data Exchange (ETDEWEB)

Purwanto, Agus, E-mail: Aguspur@uns.ac.id [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia); Widiyandari, Hendri [Department of Physics, Faculty of Mathematics and Natural Sciences, Diponegoro University, Jl. Prof. Dr. Soedarto, Tembalang, Semarang 50275 (Indonesia); Jumari, Arif [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia)

2012-01-01

A high-performance fluorine-doped tin oxide (FTO) film was fabricated by flame-assisted spray deposition method. By varying the NH{sub 4}F doping concentration, the optimal concentration was established as 8 at.%. X-ray diffractograms confirmed that the as-grown FTO film was tetragonal SnO{sub 2}. In addition, the FTO film was comprised of nano-sized grains ranging from 40 to 50 nm. The heat-treated FTO film exhibited a sheet resistance of 21.8 {Omega}/{open_square} with an average transmittance of 81.9% in the visible region ({lambda} = 400-800 nm). The figures of merit shows that the prepared FTO film can be used for highly efficient dye-sensitized solar cells electrodes.

Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Luo, Junming; Tian, Xinlong; Wu, Shoukun; Chen, Chun; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2014-01-01

Highlights: • F/Sn and Al co-doped ZnO thin films were synthesized by sol–gel method. • The co-doped nanocrystals exhibit good crystal quality. • The origin of the photoluminescence emissions was discussed. • The films showed high transmittance and low resistivity. -- Abstract: Al doped ZnO, Al–Sn co-doped ZnO and Al–F co-doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol–gel method. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The electrical and optical properties were also investigated by 4-point probe device and Uv–vis spectroscopy, room temperature photoluminescence (PL) and Raman spectrum (Raman), respectively. The PL and Raman results suggested that the co-doped films with a very low defect concentration and exhibit a better crystallinity than AZO thin films. The XPS study confirmed the incorporation of Al, Sn and F ions in the ZnO lattice

Development of a 10-inch HPD with integrated readout electronics

CERN Document Server

Braem, André; Joram, C; Séguinot, Jacques; Weilhammer, Peter; Giunta, M; Malakhov, N; Menzione, A; Pegna, R; Piccioli, A; Raffaelli, F; Sartori, G

2003-01-01

A round 10-in. diameter Hybrid Photodiode (HPD) with spherical entrance window is under development for Cherenkov imaging applications in cosmic ray astronomy. The HPD adopts the fountain focusing electron optics, which, as already demonstrated in the 5 inch Pad HPD, allows for a linear demagnification of the image over practically the full tube diameter. Self-triggering front-end electronics providing also sparse readout capability, has been tested. High-efficiency Rb//2Te cathodes have been produced on a UV extended borosilicate glass windows with very thin conductive underlayers of Indium Tin Oxide. We report on the design of the 10- in. HPD, the fabrication procedure and first tests of a 5-in. HPD with Rb//2Te photocathode and 2048 channels.

Synthesis and in-depth analysis of highly ordered yttrium doped hydroxyapatite nanorods prepared by hydrothermal method and its mechanical analysis

International Nuclear Information System (INIS)

Nathanael, A. Joseph; Mangalaraj, D.; Hong, S.I.; Masuda, Y.

2011-01-01

In this study, undoped and yttrium (Y) doped nanocrystalline hydroxyapatite crystals were synthesized by the hydrothermal method at 180 °C for 24 h. Highly ordered and oriented hydroxyapatite (HAp) nanorods were prepared by yttrium doping and their nanostructure and physical properties were compared with those of undoped HAp rods. FESEM images showed that the doping with Y ions reduced the diameter (from 25 nm to 15 nm) and increased the length (from 95 nm to 115 nm) of the synthesized rods. The aspect ratio of the undoped and Y-doped nanorods were calculated to be 4.303 (SD = 0.0959) and 7.61 (SD = 0.0355), respectively. Specific surface area (SSA) analysis showed that SSA also increased from 66.74 m 2 /g to 68.57 m 2 /g with the addition of yttrium. Y-doped HAp nanorod reinforced HMWPE composites displayed the better mechanical performance than those reinforced with pure HAp nanorods. The possible strengthening of nanorods and the increase of SSA due to the reduction in the size of nanorods in the presence of yttrium may have contributed to the strengthening of Y-doped HAp/HMWPE composites. - Graphical Abstract: Highly ordered and oriented yttrium doped hydroxyapatite (HAp) nanorods were prepared by hydrothermal method. For undoped HAp the average length of the nanorod is 95 nm with mean diameter of 24 nm and for a Y doped nanorod the average length is ∼ 115 nm and the mean diameter is 15 nm. Mechanical analysis was carried out by polymer/nanoparticle composite method. Highlights: ► Yttrium doped hydroxyapatite nanorods were prepared by hydrothermal method. ► The nanorods have highly uniform size distribution. ► Yttrium substitution and nanostructure formation was confirmed by careful analysis. ► Mechanical strength was analyzed by polymer nanoparticle reinforcement method.

Simple and greener synthesis of highly photoluminescence Mn{sup 2+}-doped ZnS quantum dots and its surface passivation mechanism

Energy Technology Data Exchange (ETDEWEB)

Wang, Yongbo; Liang, Xuhua; Ma, Xuan; Hu, Yahong [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Hu, Xiaoyun; Li, Xinghua [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China)

2014-10-15

Graphical abstract: TEM and HRTEM (inset) images of the as-prepared Mn{sup 2+}-doped ZnS QDs and the passivation mechanism model of GSH-capped ZnS QDs (b). - Highlights: • Highly photoluminescent Mn{sup 2+}-doped ZnS quantum dots were synthesized by a simple synthetic method. • The effects of Mn{sup 2+} doping concentration, reaction time and temperature on PL intensity were investigated. • The mechanism of surface passivation was described. - Abstract: In this paper, we reported a simple synthetic method of highly photoluminescent (PL) and stable Mn{sup 2+}-doped ZnS quantum dots (QDs) with glutathione (GSH) as the capping molecule and focused on mechanism of the surface passivation of QDs. The Mn{sup 2+}-doped ZnS QDs that was synthesized in basic solution (pH 10) at 120 °C for 5 h exhibited blue trap-state emission around 418 nm and a strong orange-red emission at about 580 nm with an excitation wavelength of 330 nm. The optimum doping concentration is determined to be 1.5 at.%, and the present Mn{sup 2+}-doped ZnS QDs synthesized under the optimal reaction condition exhibited a quantum yield of 48%. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that the Mn{sup 2+}-doped ZnS QDs were 3–5 nm in size with a zinc blend structure. More importantly, the PL intensity and chemical stability can be improved using organic ligand modification strategies, it was found that GSH could passivate surface defects very efficiently by comparing and analyzing the results of the different organic ligands modification. The cadmium-free Mn{sup 2+}-doped ZnS QDs well-passivated with GSH as capping molecule acquired the advantages of strong PL and excellent chemical stability, which are important to QD applications.

High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

International Nuclear Information System (INIS)

Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

2016-01-01

Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

Comparision of Incidental Reflection From Containerized Maintenance/Housekeeping Solutions and One Inch of Water

Energy Technology Data Exchange (ETDEWEB)

Chapman, Bryan Scott [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); MacQuigg, Michael Robert [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Wysong, Andrew Russell [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2016-12-15

This document addresses the incidental reflector reactivity worth of containerized maintenance/housekeeping fluids for use in PF-4 at Los Alamos National Laboratory (LANL). The intent of the document is to analyze containerized maintenance/housekeeping fluids which will be analyzed as water that may be present under normal conditions of an operation. The reactivity worth is compared to the reactivity worth due to I-inch of close-fitting 4n water reflection and I-inch of close-fitting radial water reflection. Both have been used to bound incidental reflection by 2-liter bottles in criticality safety evaluations. The conclusion is that, when the maintenance/housekeeping fluids are containerized the reactivity increase from a configuration which is bounding of normal conditions (up to eight bottles modeled with 2-liters of solution at varying diameter) is bound by I-inch of close fitting 4n water relection.

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

KAUST Repository

Maller, Robert

2016-05-24

The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

KAUST Repository

Maller, Robert; Porte, Yoann; Alshareef, Husam N.; McLachlan, Martyn

2016-01-01

The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.

High-power Yb- and Tm-doped double tungstate channel waveguide lasers

NARCIS (Netherlands)

van Dalfsen, Koop; Geskus, D.; Ay, F.; Worhoff, Kerstin; Aravazhi, S.; Pollnau, Markus

The potassium double tungstates KGd(WO4)2, KY(WO4)2, and KLu(WO4)2 are excellent candidates for solid-state lasers because of their high refractive index of ~2.0-2.1, the large transition cross-sections of rare-earth (RE3+) ions doped into these hosts, and a reasonably large thermal conductivity of

Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-T{sub c} superconductors

Energy Technology Data Exchange (ETDEWEB)

Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P [Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory and Stanford University, Stanford, CA 94305 (United States); Schmitt, F; Meevasana, W; Motoyama, E M [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305 (United States); Lu, D H [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Kim, C [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Scalettar, R T [Physics Department, University of California-Davis, Davis, CA 95616 (United States)], E-mail: moritzb@slac.stanford.edu

2009-09-15

Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

Science.gov (United States)

Saadeddin, I.; Hilal, H. S.; Decourt, R.; Campet, G.; Pecquenard, B.

2012-07-01

Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 °C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (˜ 92% of In2O3 theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In2O3 only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In2O3 forming a solid-solution. A very low value of electrical resistivity is obtained for [In2O3:Sn0.10]:Zn0.10 (1.7 × 10-3 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.

High-power ultralong-wavelength Tm-doped silica fiber laser cladding-pumped with a random distributed feedback fiber laser.

Science.gov (United States)

Jin, Xiaoxi; Du, Xueyuan; Wang, Xiong; Zhou, Pu; Zhang, Hanwei; Wang, Xiaolin; Liu, Zejin

2016-07-15

We demonstrated a high-power ultralong-wavelength Tm-doped silica fiber laser operating at 2153 nm with the output power exceeding 18 W and the slope efficiency of 25.5%. A random distributed feedback fiber laser with the center wavelength of 1173 nm was employed as pump source of Tm-doped fiber laser for the first time. No amplified spontaneous emissions or parasitic oscillations were observed when the maximum output power reached, which indicates that employing 1173 nm random distributed feedback fiber laser as pump laser is a feasible and promising scheme to achieve high-power emission of long-wavelength Tm-doped fiber laser. The output power of this Tm-doped fiber laser could be further improved by optimizing the length of active fiber, reflectivity of FBGs, increasing optical efficiency of pump laser and using better temperature management. We also compared the operation of 2153 nm Tm-doped fiber lasers pumped with 793 nm laser diodes, and the maximum output powers were limited to ~2 W by strong amplified spontaneous emission and parasitic oscillation in the range of 1900-2000 nm.

High rate capability of TiO{sub 2}/nitrogen-doped graphene nanocomposite as an anode material for lithium–ion batteries

Energy Technology Data Exchange (ETDEWEB)

Cai, Dandan; Li, Dongdong; Wang, Suqing [School of Chemistry and Chemical Engineering, South China University of Technology, Wushan Road, Guangzhou (China); Zhu, Xuefeng; Yang, Weishen [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian (China); Zhang, Shanqing [Centre for Clean Environment and Energy, Environmental Futures Centre and Griffith School of Environment, Gold Coast Campus, Griffith University, QLD 4222 (Australia); Wang, Haihui, E-mail: hhwang@scut.edu.cn [School of Chemistry and Chemical Engineering, South China University of Technology, Wushan Road, Guangzhou (China)

2013-06-05

Highlights: ► TiO{sub 2}/N-doped graphene composite was synthesized by a gas/liquid interfacial method. ► The nanocomposite was used to fabricate lithium-ion batteries. ► Its electrochemical performance was evaluated for the first time. ► The anode material exhibits a good cycling performance and rate capability. -- Abstract: TiO{sub 2}/nitrogen-doped graphene nanocomposite was synthesized by a facile gas/liquid interface reaction. The structure and morphology of the sample were analyzed by X-ray diffraction analysis, X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy. The results indicate that nitrogen atoms were successfully doped into graphene sheets. The TiO{sub 2} nanoparticles (8–13 nm in size) were homogenously anchored on the nitrogen-doped graphene sheets through gas/liquid interface reaction. The as-prepared TiO{sub 2}/nitrogen-doped graphene nanocomposite shows a better electrochemical performance than the TiO{sub 2}/graphene nanocomposite and the bare TiO{sub 2} nanoparticles. TiO{sub 2}/nitrogen-doped graphene nanocomposite exhibits excellent cycling stability and shows high capacity of 136 mAh g{sup −1} (at a current density of 1000 mA g{sup −1}) after 80 cycles. More importantly, a high reversible capacity of 109 mAh g{sup −1} can still be obtained even at a super high current density of 5000 mA g{sup −1}. The superior electrochemical performance is attributed to the good electronic conductivity introduced by the nitrogen-doped graphene sheets and the positive synergistic effect between nitrogen-doped graphene sheets and TiO{sub 2} nanoparticles.

Fabrication of water-dispersible and highly conductive PSS-doped PANI/graphene nanocomposites using a high-molecular weight PSS dopant and their application in H2S detection

Science.gov (United States)

Cho, Sunghun; Lee, Jun Seop; Jun, Jaemoon; Kim, Sung Gun; Jang, Jyongsik

2014-11-01

This work describes the fabrication of poly(4-styrenesulfonic acid)-doped polyaniline/graphene (PSS-doped PANI/graphene) nanocomposites and their use as sensing elements for hydrogen sulfide (H2S) detection. PSS with a weight-average molecular weight (Mw) of 1.96 × 106 was synthesized using low-temperature free-radical polymerization. The PSS was used as both a doping agent and a binding agent for the polymerization of aniline monomers in a biphasic system (water-chloroform) at -50 °C. The high Mw of PSS resulted in relatively large particle sizes and smooth surfaces of the PSS-doped PANI. These physical characteristics, in turn, resulted in low interparticle resistance and high conductivity. In addition, the PSS allowed homogeneous dispersion of reduced graphene sheets through electrostatic repulsion. The prepared PSS-doped PANI/graphene solutions showed good compatibility with flexible poly(ethylene terephthalate) (PET) substrates, making them suitable for flexible sensor electrodes. Changes in the charge-transport properties, such as protonation level, conjugation length, crystalline structure, and charge-transfer resistance, of the electrode materials were the main factors influencing the electrical and sensor performance of the PSS-doped PANI-based electrodes. PSS-doped PANI/graphene composites containing 30 wt% graphene showed the highest conductivity (168.4 S cm-1) and the lowest minimum detection level (MDL) for H2S gas (1 ppm). This result is consistent with the observed improvements in charge transport in the electrode materials via strong π-π stacking interactions between the PANI and the graphene sheets.This work describes the fabrication of poly(4-styrenesulfonic acid)-doped polyaniline/graphene (PSS-doped PANI/graphene) nanocomposites and their use as sensing elements for hydrogen sulfide (H2S) detection. PSS with a weight-average molecular weight (Mw) of 1.96 × 106 was synthesized using low-temperature free-radical polymerization. The PSS was

Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

International Nuclear Information System (INIS)

Tsai, Jung-Hui; Ye, Sheng-Shiun; Guo, Der-Feng; Lour, Wen-Shiung

2012-01-01

Influence corresponding to the position of δ-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower δ-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper δ-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower δ-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain-to-source voltage in the two devices, which is investigated in this article.

High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex

Energy Technology Data Exchange (ETDEWEB)

Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhao, Juan; Wang, Jun [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

2013-02-15

Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(fbt){sub 2}Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt){sub 2}Ir(acac). The results are appealing towards the development of 'easy-to-make' OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer. - Highlight: Black-Right-Pointing-Pointer We obtained efficient OLEDs based on newly synthesized quench-resistant phosphor. Black-Right-Pointing-Pointer Peak performance was obtained with 15 wt% (fbt){sub 2}Ir(acac) doped device. Black-Right-Pointing-Pointer Our devices gave one of the best performance among heavily-doped red devices. Black-Right-Pointing-Pointer Balanced carrier transport is crucial for the high performance of our devices.

Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

Energy Technology Data Exchange (ETDEWEB)

Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

2011-07-01

Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

A synthesis method for cobalt doped carbon aerogels with high surface area and their hydrogen storage properties

Energy Technology Data Exchange (ETDEWEB)

Tian, H.Y.; Buckley, C.E. [Department of Imaging and Applied Physics, Curtin University of Technology, GPO Box U 1987, Perth 6845, WA (Australia); CSIRO National Hydrogen Materials Alliance, CSIRO Energy Centre, 10 Murray Dwyer Circuit, Steel River Estate, Mayfield West, NSW 2304 (Australia); Sheppard, D.A.; Paskevicius, M. [Department of Imaging and Applied Physics, Curtin University of Technology, GPO Box U 1987, Perth 6845, WA (Australia); Hanna, N. [CSIRO Process Science and Engineering, Waterford, WA (Australia)

2010-12-15

Carbon aerogels doped with nanoscaled Co particles were prepared by first coating activated carbon aerogels using a wet-thin layer coating process. The resulting metal-doped carbon aerogels had a higher surface area ({proportional_to}1667 m{sup 2} g{sup -1}) and larger micropore volume ({proportional_to}0.6 cm{sup 3} g{sup -1}) than metal-doped carbon aerogels synthesised using other methods suggesting their usefulness in catalytic applications. The hydrogen adsorption behaviour of cobalt doped carbon aerogel was evaluated, displaying a high {proportional_to}4.38 wt.% H{sub 2} uptake under 4.6 MPa at -196 C. The hydrogen uptake capacity with respect to unit surface area was greater than for pure carbon aerogel and resulted in {proportional_to}1.3 H{sub 2} (wt. %) per 500 m{sup 2} g{sup -1}. However, the total hydrogen uptake was slightly reduced as compared to pure carbon aerogel due to a small reduction in surface area associated with cobalt doping. The improved adsorption per unit surface area suggests that there is a stronger interaction between the hydrogen molecules and the cobalt doped carbon aerogel than for pure carbon aerogel. (author)

An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

Directory of Open Access Journals (Sweden)

An-Jye Tzou

2016-06-01

Full Text Available This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT with a 1702 V breakdown voltage (BV and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed ID under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications.

NO PLIF Imaging in the CUBRC 48 Inch Shock Tunnel

Science.gov (United States)

Jiang, N.; Bruzzese, J.; Patton, R.; Sutton J.; Lempert W.; Miller, J. D.; Meyer, T. R.; Parker, R.; Wadham, T.; Holden, M.;

Highly effective catalytic peroxymonosulfate activation on N-doped mesoporous carbon for o-phenylphenol degradation.

Science.gov (United States)

Hou, Jifei; Yang, Shasha; Wan, Haiqin; Fu, Heyun; Qu, Xiaolei; Xu, Zhaoyi; Zheng, Shourong

2018-04-01

As a broad-spectrum preservative, toxic o-phenylphenol (OPP) was frequently detected in aquatic environments. In this study, N-doped mesoporous carbon was prepared by a hard template method using different nitrogen precursors and carbonization temperatures (i.e., 700, 850 and 1000 °C), and was used to activate peroxymonosulfate (PMS) for OPP degradation. For comparison, mesoporous carbon (CMK-3) was also prepared. Characterization results showed that the N-doped mesoporous carbon samples prepared under different conditions were perfect replica of their template. In comparison with ethylenediamine (EDA) and dicyandiamide (DCDA) as the precursors, N-doped mesoporous carbon prepared using EDA and carbon tetrachloride as the precursors displayed a higher catalytic activity for OPP degradation. Increasing carbonization temperature of N-doped mesoporous carbon led to decreased N content and increased graphitic N content at the expense of pyridinic and pyrrolic N. Electron paramagnetic resonance (EPR) analysis showed that PMS activation on N-doped mesoporous carbon resulted in highly active species and singlet oxygen, and catalytic PMS activation for OPP degradation followed a combined radical and nonradical reaction mechanism. Increasing PMS concentration enhanced OPP degradation, while OPP degradation rate was independent on initial OPP concentration. Furthermore, the dependency of OPP degradation on PMS concentration followed the Langmuir-Hinshelwood model, reflecting that the activation of adsorbed PMS was the rate controlling step. Based on the analysis by time-of-flight mass spectrometry, the degradation pathway of OPP was proposed. Copyright © 2018 Elsevier Ltd. All rights reserved.

Fabrication of 0.5-inch diameter FBR mixed oxide fuel pellets

International Nuclear Information System (INIS)

Rasmussen, D.E.; Benecke, M.W.; McCord, R.B.

1979-01-01

Large diameter (0.535 inch) mixed oxide fuel pellets for Fast Breeder Reactor application were successfully fabricated by the cold-press-and-sinter technique. Enriched UO 2 , PuO 2 -UO 2 , and PuO 2 -ThO 2 compositions were fabricated into nominally 90% theoretical density pellets for the UO 2 and PuO 2 -UO 2 compositions, and 88% and 93% T.D. for the PuO 2 -ThO 2 compositions. Some processing adjustments were required to achieve satisfactory pellet quality and density. Furnace heating rate was reduced from 200 to 50 0 C/h for the organic binder burnout cycle for the large, 0.535-inch diameter pellets to eliminate pellet cracking during sintering. Additional preslugging steps and die wall lubrication during pressing were used to eliminate pressing cracks in the PuO 2 -ThO 2 pellets

Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

Science.gov (United States)

Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

2017-12-01

Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

High-Performance Doping-Free Hybrid White OLEDs Based on Blue Aggregation-Induced Emission Luminogens.

Science.gov (United States)

Liu, Baiquan; Nie, Han; Lin, Gengwei; Hu, Shiben; Gao, Dongyu; Zou, Jianhua; Xu, Miao; Wang, Lei; Zhao, Zujin; Ning, Honglong; Peng, Junbiao; Cao, Yong; Tang, Ben Zhong

2017-10-04

Doping-free white organic light-emitting diodes (DF-WOLEDs) have aroused research interest because of their simple properties. However, to achieve doping-free hybrid WOLEDs (DFH-WOLEDs), avoiding aggregation-caused quenching is challenging. Herein, blue luminogens with aggregation-induced emission (AIE) characteristics, for the first time, have been demonstrated to develop DFH-WOLEDs. Unlike previous DFH-WOLEDs, both thin (10 nm) AIE luminogen (AIEgen) can be used for devices, enhancing the flexibility. Two-color devices show (i) pure-white emission, (ii) high CRI (85), and (iii) high efficiency. Particularly, 19.0 lm W 1- is the highest for pure-white DF-WOLEDs, while 35.0 lm W 1- is the best for two-color hybrid WOLEDs with CRI ≥ 80. A three-color DFH-WOLED shows broad color-correlated temperature span (2301-11628 K), (i) the first sunlight-like OLED (2500-8000 K) operating at low voltages, (ii) the broadest span among sunlight-like OLED, and (iii) possesses comparable efficiency with the best doping counterpart. Another three-color DFH-WOLED exhibits CRI > 90 at ≥3000 cd m -2 , (i) the first DF-WOLED with CRI ≥ 90 at high luminances, and (ii) the CRI (92.8) is not only the highest among AIE-based WOLEDs but also the highest among DF-WOLEDs. Such findings may unlock an alternative concept to develop DFH-WOLEDs.

Lowering the platinum loading of high temperature polymer electrolyte membrane fuel cells with acid doped polybenzimidazole membranes

DEFF Research Database (Denmark)

Fernandez, Santiago Martin; Li, Qingfeng; Jensen, Jens Oluf

2015-01-01

Membrane electrode assemblies (MEAs) with ultra-low Pt loading electrodes were prepared for high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs) based on acid doped polybenzimidazole. With no electrode binders or ionomers, the triple phase boundary of the catalyst layer was establ......Membrane electrode assemblies (MEAs) with ultra-low Pt loading electrodes were prepared for high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs) based on acid doped polybenzimidazole. With no electrode binders or ionomers, the triple phase boundary of the catalyst layer...

Upconverting crystal/dextran-g-DOPE with high fluorescence stability for simultaneous photodynamic therapy and cell imaging

International Nuclear Information System (INIS)

Wang, HanJie; Wang, Sheng; Liu, Zhongyun; Dong, Chunhong; Chang, Jin; Yang, Jiumin; Gong, Xiaoqun

2014-01-01

To date, the application of photodynamic therapy in deep tissue has been severely restricted by the limited penetration depth of excitation light, such as UV light and visible light. In this work, a protocol of upconverting crystal/dextran-g-DOPE nanocomplex (UCN/dextran-g-DOPE) was developed. The nanocomplex was assembled from the hydrophobic upconverting nanoparticle (UCN) core and hydrophilic lipid shell. The photosensitizer zinc phthalocyanine (ZnPc) loaded UCN/dextran-g-DOPE offers possibilities to overcome the problem mentioned above. The UCN core works as a transducer to convert deeply penetrating near-infrared light to visible light to activate ZnPc for photodynamic therapy. The dextran-g-DOPE lipid shell is used for loading ZnPc and protecting the whole system from nonspecific absorbance or corrosion during the transportation. The experiment results show that the nanocomplex is an individual sphere with an average size of 30 nm. The ZnPc was activated to produce singlet oxygen successfully by the upconverting fluorescence emitted from UCN. The nanocomplex has high fluorescence stability in alkaline or neutral buffer solutions. Importantly, the ZnPc loaded UCN/dextran-g-DOPE nanocomplex showed a significant inhibitory effect on tumor cells after NIR exposure. Our data suggest that a ZnPc loaded UCN/dextran-g-DOPE nanocomplex may be a useful nanoplatform for future PDT treatment in deep-cancer therapy based on the upconverting mechanism. (paper)

Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

Energy Technology Data Exchange (ETDEWEB)

Ravichandran, K., E-mail: kkr1365@yahoo.co [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India); Muruganantham, G.; Sakthivel, B. [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

2009-11-15

Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO{sub 2}:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl{sub 2} precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08x10{sup 14} lines/m{sup 2}) when compared with that of the undoped film (13.2x10{sup 14} lines/m{sup 2}), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 OMEGA/square) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl{sub 2} precursor (without using methanol or ethanol).

Unusually high dispersion of nitrogen-doped carbon nanotubes in DNA solution.

Science.gov (United States)

Kim, Jin Hee; Kataoka, Masakazu; Fujisawa, Kazunori; Tojo, Tomohiro; Muramatsu, Hiroyuki; Vega-Díaz, Sofía M; Tristán-López, F; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S

2011-12-08

The dispersibility in a DNA solution of bundled multiwalled carbon nanotubes (MWCNTs), having different chemical functional groups on the CNT sidewall, was investigated by optical spectroscopy. We observed that the dispersibility of nitrogen (N)-doped MWCNTs was significantly higher than that of pure MWCNTs and MWCNTs synthesized in the presence of ethanol. This result is supported by the larger amount of adsorbed DNA on N-doped MWCNTs, as well as by the higher binding energy established between nucleobases and the N-doped CNTs. Pure MWCNTs are dispersed in DNA solution via van der Waals and hydrophobic interactions; in contrast, the nitrogenated sites within N-doped MWCNTs provided additional sites for interactions that are important to disperse nanotubes in DNA solutions. © 2011 American Chemical Society

Child seat belt guidelines: Examining the 4 feet 9 inches rule as the standard.

Science.gov (United States)

Morse, Amber M; Aitken, Mary E; Mullins, Samantha H; Miller, Beverly K; Pomtree, Mindy M; Ulloa, Erin M; Montgomery, Jeffrey S; Saylors, Marie E

2017-08-01

Current American Academy of Pediatrics recommendations regarding transition from child safety/booster seat to adult safety belt use indicate that children should be at least 4 feet 9 inches, 8 years old, or 80 pounds. Proper fit in the vehicle seat, assessed with a five-point fit test, should also be met. Although most children reach 4 feet 9 inches around age 8 years, each child and vehicle presents a unique combination; thus a child may not fit appropriately in all vehicle types using only the 4 feet 9 inches requirement. We enrolled children, aged 7 years to 12 years, into our study. Height, weight, and demographic data were obtained. A Child Passenger Safety Technician then performed the five-point fit test in each of a uniform lineup of five vehicles. Data were collected on fit in the standard vehicle seat and also in a booster seat. We set 90% as the threshold proportion of children who meet all criteria for proper fit to validate current recommendations of a height of 4 feet 9 inches. Data were collected on 388 children. The percentage of 90% proper fit was met in the compact car and small sport-utility vehicle (SUV). However, only 80 (77%) of 104 students (p vehicles (large SUVs and trucks). This emphasizes the need for evaluation of fit by a trained personnel and/or development of standard back seat dimensions in all vehicles for maximum safety. Epidemiologic study, level III; Therapeutic study, level V.

Worcester 1 Inch Solenoid-Actuated Gas-Operated VPS System Ball Valve

International Nuclear Information System (INIS)

VAN KATWIJK, C.

2000-01-01

1 inch Gas-operated full-port ball valve incorporates a solenoid and limit switches as integral parts of the actuator. The valve is normally open and fails safe to the closed position. The associated valve position switch is class GS

Three-dimensional N-doped graphene/polyaniline composite foam for high performance supercapacitors

Science.gov (United States)

Zhu, Jun; Kong, Lirong; Shen, Xiaoping; Chen, Quanrun; Ji, Zhenyuan; Wang, Jiheng; Xu, Keqiang; Zhu, Guoxing

2018-01-01

Three-dimensional (3D) graphene aerogel and its composite with interconnected pores have aroused continuous interests in energy storage field owning to its large surface area and hierarchical pore structure. Herein, we reported the preparation of 3D nitrogen-doped graphene/polyaniline (N-GE/PANI) composite foam for supercapacitive material with greatly improved electrochemical performance. The 3D porous structure can allow the penetration and diffusion of electrolyte, the incorporation of nitrogen doping can enhance the wettability of the active material and the number of active sites with electrolyte, and both the N-GE and PANI can ensure the high electrical conductivity of total electrode. Moreover, the synergistic effect between N-GE and PANI materials also play an important role on the electrochemical performance of electrode. Therefore, the as-prepared composite foam could deliver a high specific capacitance of 528 F g-1 at 0.1 A g-1 and a high cyclic stability with 95.9% capacitance retention after 5000 charge-discharge cycles. This study provides a new idea on improving the energy storage capacity of supercapacitors by using 3D graphene-based psedocapacitive electrode materials.

Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films

KAUST Repository

Benali Kanoun, Mohammed

2012-05-29

We present first-principles results for Sc-doped ZnOthin films. Neighboring Sc atoms in the surface and/or subsurface layers are found to be coupled ferromagnetically, where only two of the possible configurations induce spin polarization. In the first configuration, the polarization is carried by the Sc d states as expected for transition metaldoping. However, there is a second configuration which is energetically favorable. It is governed by polarized hybrid states of the Zns, O p, and Sc d orbitals. Such highly delocalized states can be an important ingredient for understanding the magnetism of dopedZnOthin films.

High-performance thermal sensitive W-doped VO{sub 2}(B) thin film and its identification by first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Wan, Dongyun; Xiong, Ping; Chen, Lanli [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Shi, Siqi, E-mail: sqshi@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Ishaq, Ahmad [National Center for Physics, Quaid-I-Azam University, Islamabad 44000 (Pakistan); Luo, Hongjie [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Gao, Yanfeng, E-mail: yfgao@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China)

2017-03-01

Graphical abstract: VO{sub 2}(B) thin films with high TCR and suitable resistance were first achieved by W doping. The mechanism for performance improvement was studied by first-principles calculations. The two-dimensional octahedral structure of VO{sub 2}(B) favors the strain control with W-doping for achieving a large TCR, which overcomes the contradiction between the high conductivity and large TCR generated by dopants in VO{sub 2}(M). - Highlights: • High performance W-doped VO{sub 2}(B) thin films were first achieved by co-sputtering. • Mechanism for performance improvement was studied by first-principles calculations. • The two-dimensional octahedral structure of VO{sub 2} (B) favors the strain control. • Achieved VO{sub 2} films possess high thermal sensitivity (TCR: −3.9%/K & R{sub 0}: 32.7 kΩ). - Abstract: VO{sub 2}(B) is currently a preferred phase structure for the application as bolometer material, which, however, suffers from low temperature-coefficient-of-resistance (TCR) values and large resistances. Here we present the combined experimental and first-principles calculations study on both doped and undoped VO{sub 2}(B) thin films enabling us to attain high TCR (−3.9%/k) and suitable square-resistance (32.7 kΩ) by controlled W doping employing the widely used magnetron sputtering technique. The TCR value is 50% larger than reported ones at the similar resistance. The underlying microscopic mechanism for the performance improvement was studied and results indicated that the introduction of extra electrons and the variation in the band structure resulting from the incorporation of W{sup 6+} ions in the VO{sub 2}(B) crystal lattice contribute to the enhancement of the electronic conductivity. Moreover, the special two-dimensional octahedral structure of monoclinic (C2/m) B-phase VO{sub 2} favors the strain control with W-doping for achieving a large TCR, which overcomes the analogous predicament between the high conductivity and large TCR

High-current and low acceleration voltage arsenic ion implanted polysilicon-gate and source-drain electrode Si mos transistor

International Nuclear Information System (INIS)

Saito, Yasuyuki; Sugimura, Yoshiro; Sugihara, Michiyuki

1993-01-01

The fabrication process of high current arsenic (As) ion implanted polysilicon (Si) gate and source drain (SD) electrode Si n-channel metal oxide-semiconductor field effect transistor (MOSFET) was examined. Poly Si film n-type doping was performed by using high current (typical current: 2mA) and relatively low acceleration voltage (40keV) As ion implantation technique (Lintott series 3). It was observed that high dose As implanted poly Si films as is show refractoriness against radical fluorine excited by microwave. Using GCA MANN4800 (m/c ID No.2, resist: OFPR) mask pattern printing technique, the high current As ion implantation technique and radical fluorine gas phase etching (Chemical dry etching: CDE) technique, the n-channel Poly Si gate (ρs = ≅100Ω/□) enhancement MQSFETs(ρs source drain = ≅50Ω/□, SiO 2 gate=380 angstrom) with off-leak-less were obtained on 3 inch Czochralski grown 2Ωcm boron doped p type wafers (Osaka titanium). By the same process, a 8 bit single chip μ-processor with 26MHz full operation was performed

Evolution of magnetic and superconducting fluctuations with doping of high-Tc superconductors. An electronic Raman scattering study

International Nuclear Information System (INIS)

Blumberg, G.

1998-01-01

For YBa 2 Cu 3 O 6+δ and Bi 2 Sr 2 CaCu 2 O 3±δ superconductors, electronic Raman scattering from high- and low-energy excitations has been studied in relation to the hole doping level, temperature, and energy of the incident photons. For underdoped superconductors, it is concluded that short range antiferromagnetic (AF) correlations persist with hole doping and doped single holes are incoherent in the AF environment. Above the superconducting (SC) transition temperature T c the system exhibits a sharp Raman resonance of B 1g symmetry and about 75 meV energy and a pseudogap for electron-hole excitations below 75 meV, a manifestation of a partially coherent state forming from doped incoherent quasi-particles. The occupancy of the coherent state increases with cooling until phase ordering at T c produces a global SC state

Instability of supercritical porosity in highly doped ceria under reduced oxygen partial pressure

DEFF Research Database (Denmark)

Teocoli, Francesca; Ni, De Wei; Esposito, Vincenzo

2015-01-01

The thermomechanical behavior and microstructural evolution of low relative density (∼0.40) gadolinium-doped ceria are characterized under oxidative and reducing conditions at high temperatures. The electronic defects generated in the structure by Ce4+ to Ce3+ reduction play an important role on ...

High-performance metal mesh/graphene hybrid films using prime-location and metal-doped graphene.

Science.gov (United States)

Min, Jung-Hong; Jeong, Woo-Lim; Kwak, Hoe-Min; Lee, Dong-Seon

2017-08-31

We introduce high-performance metal mesh/graphene hybrid transparent conductive layers (TCLs) using prime-location and metal-doped graphene in near-ultraviolet light-emitting diodes (NUV LEDs). Despite the transparency and sheet resistance values being similar for hybrid TCLs, there were huge differences in the NUV LEDs' electrical and optical properties depending on the location of the graphene layer. We achieved better physical stability and current spreading when the graphene layer was located beneath the metal mesh, in direct contact with the p-GaN layer. We further improved the contact properties by adding a very thin Au mesh between the thick Ag mesh and the graphene layer to produce a dual-layered metal mesh. The Au mesh effectively doped the graphene layer to create a p-type electrode. Using Raman spectra, work function variations, and the transfer length method (TLM), we verified the effect of doping the graphene layer after depositing a very thin metal layer on the graphene layers. From our results, we suggest that the nature of the contact is an important criterion for improving the electrical and optical performance of hybrid TCLs, and the method of doping graphene layers provides new opportunities for solving contact issues in other semiconductor devices.

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

International Nuclear Information System (INIS)

Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

2010-01-01

Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

International Nuclear Information System (INIS)

Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

2014-01-01

Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

Energy Technology Data Exchange (ETDEWEB)

Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2014-10-15

Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

Nitrogen-doped graphene prepared by a transfer doping approach for the oxygen reduction reaction application

Science.gov (United States)

Mo, Zaiyong; Zheng, Ruiping; Peng, Hongliang; Liang, Huagen; Liao, Shijun

2014-01-01

Well defined nitrogen-doped graphene (NG) is prepared by a transfer doping approach, in which the graphene oxide (GO) is deoxidized and nitrogen doped by the vaporized polyaniline, and the GO is prepared by a thermal expansion method from graphite oxide. The content of doped nitrogen in the doped graphene is high up to 6.25 at% by the results of elements analysis, and oxygen content is lowered to 5.17 at%. As a non-precious metal cathode electrocatalyst, the NG catalyst exhibits excellent activity toward the oxygen reduction reaction, as well as excellent tolerance toward methanol. In 0.1 M KOH solution, its onset potential, half-wave potential and limiting current density for the oxygen reduction reaction reach 0.98 V (vs. RHE), 0.87 V (vs. RHE) and 5.38 mA cm-2, respectively, which are comparable to those of commercial 20 wt% Pt/C catalyst. The well defined graphene structure of the catalyst is revealed clearly by HRTEM and Raman spectra. It is suggested that the nitrogen-doping and large surface area of the NG sheets give the main contribution to the high ORR catalytic activity.

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

Science.gov (United States)

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-08-01

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

2013-01-01

We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

High-temperature thermoelectric properties of La-doped BaSnO3 ceramics

International Nuclear Information System (INIS)

Yasukawa, Masahiro; Kono, Toshio; Ueda, Kazushige; Yanagi, Hiroshi; Hosono, Hideo

2010-01-01

To elucidate the thermoelectric properties at high temperatures, perovskite-type La-doped BaSnO 3 ceramics were fabricated by a polymerized complex (PC) method and subsequent spark plasma sintering (SPS) technique. Fine powders of Ba 1-x La x SnO 3 (x = 0.00-0.07) were prepared by the PC method using citrate complexes, and SPS treatment converted the powders into dense ceramics with relative densities of 93-97%. The La content dependence of the lattice parameter suggested that the solubility of La for Ba sites was approximately x = 0.03. The temperature dependence of the electrical conductivity σ and Seebeck coefficient S showed that each La-doped ceramic was an n-type degenerate semiconductor in the measured temperature range of 373-1073 K. The La content dependence of the S values indicated that the electron carrier concentration increased successively up to x = 0.03, which was the solubility limit of the La atoms. The thermoelectric power factors S 2 σ increased drastically with La doping, and reached a maximum for x = 0.01 with values of 0.8 x 10 -4 W m -1 K -2 at 373 K to 2.8 x 10 -4 W m -1 K -2 at 1073 K.

Seismic fragility test of a 6-inch diameter pipe system

International Nuclear Information System (INIS)

Chen, W.P.; Onesto, A.T.; DeVita, V.

1987-02-01

This report contains the test results and assessments of seismic fragility tests performed on a 6-inch diameter piping system. The test was funded by the US Nuclear Regulatory Commission (NRC) and conducted by ETEC. The objective of the test was to investigate the ability of a representative nuclear piping system to withstand high level dynamic seismic and other loadings. Levels of loadings achieved during seismic testing were 20 to 30 times larger than normal elastic design evaluations to ASME Level D limits would permit. Based on failure data obtained during seismic and other dynamic testing, it was concluded that nuclear piping systems are inherently able to withstand much larger dynamic seismic loadings than permitted by current design practice criteria or predicted by the probabilistic risk assessment (PRA) methods and several proposed nonlinear methods of failure analysis

High-Quality Fe-doped TiO2 films with Superior Visible-Light Performance

DEFF Research Database (Denmark)

Su, Ren; Bechstein, Ralf; Kibsgaard, Jakob

2012-01-01

We report on high-quality polycrystalline Fe-doped TiO2 (Fe–TiO2) porous films synthesized via one-step electrochemical oxidation. We demonstrate that delicate properties such as the impurity concentration and the microstructure that strongly influence the performance of the material for photovol...

Phosphoric acid doped AB-PBI membranes and its applications in high temperature PEMFC

DEFF Research Database (Denmark)

He, Ronghuan; Qingfeng, Li; Bjerrum, Niels

2005-01-01

Poly(2,5-benzimidazole) (ab-PBI) was prepared from 3，4-diaminobenzoic acid via a polymerisation reaction. The obtained polymer exhibits excellent thermal stability in a temperature range ….. The membrane of ab-PBI when doped with phosphoric acid at room temperaturepresents high proton conductivity...

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

Science.gov (United States)

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

Continuously tunable photonic fractional Hilbert transformer using a high-contrast germanium-doped silica-on-silicon microring resonator.

Science.gov (United States)

Shahoei, Hiva; Dumais, Patrick; Yao, Jianping

2014-05-01

We propose and experimentally demonstrate a continuously tunable fractional Hilbert transformer (FHT) based on a high-contrast germanium-doped silica-on-silicon (SOS) microring resonator (MRR). The propagation loss of a high-contrast germanium-doped SOS waveguide can be very small (0.02 dB/cm) while the lossless bend radius can be less than 1 mm. These characteristics lead to the fabrication of an MRR with a high Q-factor and a large free-spectral range (FSR), which is needed to implement a Hilbert transformer (HT). The SOS MRR is strongly polarization dependent. By changing the polarization direction of the input signal, the phase shift introduced at the center of the resonance spectrum is changed. The tunable phase shift at the resonance wavelength can be used to implement a tunable FHT. A germanium-doped SOS MRR with a high-index contrast of 3.8% is fabricated. The use of the fabricated MRR for the implementation of a tunable FHT with tunable orders at 1, 0.85, 0.95, 1.05, and 1.13 for a Gaussian pulse with the temporal full width at half-maximum of 80 ps is experimentally demonstrated.

Child seat belt guidelines: Examining the 4 feet 9 inches rule as the standard.

Science.gov (United States)

Morse, Amber M; Aitken, Mary E; Mullins, Samantha H; Miller, Beverly K; Pomtree, Mindy M; Ulloa, Erin M; Montgomery, Jeffrey S; Saylors, Marie E

2017-11-01

Current American Academy of Pediatrics recommendations regarding transition from child safety/booster seat to adult safety belt use indicate that children should be at least 4 feet 9 inches, 8 years old, or 80 pounds. Proper fit in the vehicle seat, assessed with a five-point fit test, should also be met. Although most children reach 4 feet 9 inches around age 8 years, each child and vehicle presents a unique combination; thus a child may not fit appropriately in all vehicle types using only the 4 feet 9 inches requirement. We enrolled children, aged 7 years to 12 years, into our study. Height, weight, and demographic data were obtained. A Child Passenger Safety Technician then performed the five-point fit test in each of a uniform lineup of five vehicles. Data were collected on fit in the standard vehicle seat and also in a booster seat. We set 90% as the threshold proportion of children who meet all criteria for proper fit to validate current recommendations of a height of 4 feet 9 inches. Data were collected on 388 children. The percentage of 90% proper fit was met in the compact car and small sport-utility vehicle (SUV). However, only 80 (77%) of 104 students (p guidelines for an adult seat belt do not meet safety requirements for fit, especially in larger, commonly used vehicles (large SUVs and trucks). This emphasizes the need for evaluation of fit by a trained personnel and/or development of standard back seat dimensions in all vehicles for maximum safety. Epidemiologic level 1.

Highly efficient synthesis of ordered nitrogen-doped mesoporous carbons with tunable properties and its application in high performance supercapacitors

Science.gov (United States)

Liu, Dan; Zeng, Chao; Qu, Deyu; Tang, Haolin; Li, Yu; Su, Bao-Lian; Qu, Deyang

2016-07-01

Nitrogen-doped ordered mesoporous carbons (OMCs) have been synthesized via aqueous cooperative assembly route in the presence of basic amino acids as either polymerization catalysts or nitrogen dopants. This method allows the large-scale production of nitrogen-doped OMCs with tunable composition, structure and morphology while maintaining highly ordered mesostructures. For instances, the nitrogen content can be varied from ∼1 wt% to ∼6.3 wt% and the mesophase can be either 3-D body-centered cubic or 2-D hexagonal. The specific surface area for typical OMCs is around 600 m2 g-1, and further KOH activation can significantly enhance the surface area to 1866 m2 g-1 without destroying the ordered mesostructures. Benefiting from hierarchically ordered porous structure, nitrogen-doping effect and large-scale production availability, the synthesized OMCs show a great potential towards supercapacitor application. When measured in a symmetrical two-electrode configuration with an areal mass loading of ∼3 mg cm-2, the activated OMC exhibits high capacitance (186 F g-1 at 0.25 A g-1) and good rate capability (75% capacity retention at 20 A g-1) in ionic liquid electrolyte. Even as the mass loading is up to ∼12 mg cm-2, the OMC electrode still yields a specific capacitance of 126 F g-1 at 20 A g-1.

Record power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

DEFF Research Database (Denmark)

Jain, Deepak; Sidharthan, R.; Moselund, Peter M.

2016-01-01

the potential of germania based photonic crystal fiber or a step-index fiber supercontinuum source for high power ultra-broad band emission being by pumped a 1060 nm or a 1550 nm laser source. To the best of our knowledge, this is the record power, ultra-broadband, and all-fiberized supercontinuum light source...... based on silica and germania fiber ever demonstrated to the date. (C) 2016 Optical Society of America......We demonstrate highly germania doped fibers for mid-infrared supercontinuum generation. Experiments ensure a highest output power of 1.44 W for a broadest spectrum from 700 nm to 3200 nm and 6.4 W for 800 nm to 2700 nm from these fibers, while being pumped by a broadband Erbium-Ytterbium doped...

High gain L-band erbium-doped fiber amplifier with two-stage ...

Indian Academy of Sciences (India)

stage erbium-doped fiber amplifier; amplified spontaneous emission. Abstract. An experiment on gain enhancement in the long wavelength band erbium-doped fiber amplifier (L-band EDFA) is demonstrated using dual forward pumping scheme ...

Project W320 52-inch diameter equipment container load test: Test report

International Nuclear Information System (INIS)

Bellomy, J.R.

1995-01-01

This test report summarizes testing activities and documents the results of the load tests performed on-site and off-site to structural qualify the 52-inch equipment containers designed and fabricated under Project W-320

Assessment of effect of Yb3+ ion pairs on a highly Yb-doped double-clad fibre laser

Science.gov (United States)

Vallés, J. A.; Martín, J. C.; Berdejo, V.; Cases, R.; Álvarez, J. M.; Rebolledo, M. Á.

2018-03-01

Using a previously validated characterization method based on the careful measurement of the characteristic parameters and fluorescence emission spectra of a highly Yb-doped double-clad fibre, we evaluate the contribution of ion pair induced processes to the output power of a double-clad Yb-doped fibre ring laser. This contribution is proved to be insignificant, contrary to analysis by other authors, who overestimate the role of ion pairs.

In situ one-step synthesis of hierarchical nitrogen-doped porous carbon for high-performance supercapacitors.

Science.gov (United States)

Jeon, Ju-Won; Sharma, Ronish; Meduri, Praveen; Arey, Bruce W; Schaef, Herbert T; Lutkenhaus, Jodie L; Lemmon, John P; Thallapally, Praveen K; Nandasiri, Manjula I; McGrail, Benard Peter; Nune, Satish K

2014-05-28

A hierarchically structured nitrogen-doped porous carbon is prepared from a nitrogen-containing isoreticular metal-organic framework (IRMOF-3) using a self-sacrificial templating method. IRMOF-3 itself provides the carbon and nitrogen content as well as the porous structure. For high carbonization temperatures (950 °C), the carbonized MOF required no further purification steps, thus eliminating the need for solvents or acid. Nitrogen content and surface area are easily controlled by the carbonization temperature. The nitrogen content decreases from 7 to 3.3 at % as carbonization temperature increases from 600 to 950 °C. There is a distinct trade-off between nitrogen content, porosity, and defects in the carbon structure. Carbonized IRMOFs are evaluated as supercapacitor electrodes. For a carbonization temperature of 950 °C, the nitrogen-doped porous carbon has an exceptionally high capacitance of 239 F g(-1). In comparison, an analogous nitrogen-free carbon bears a low capacitance of 24 F g(-1), demonstrating the importance of nitrogen dopants in the charge storage process. The route is scalable in that multi-gram quantities of nitrogen-doped porous carbons are easily produced.

Diffusion in Intrinsic and Highly Doped III-V Semiconductors

CERN Multimedia

Stolwijk, N

2002-01-01

%title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

Nitrogen Doped Macroporous Carbon as Electrode Materials for High Capacity of Supercapacitor

Directory of Open Access Journals (Sweden)

Yudong Li

2017-01-01

Full Text Available Nitrogen doped carbon materials as electrodes of supercapacitors have attracted abundant attention. Herein, we demonstrated a method to synthesize N-doped macroporous carbon materials (NMC with continuous channels and large size pores carbonized from polyaniline using multiporous silica beads as sacrificial templates to act as electrode materials in supercapacitors. By the nice carbonized process, i.e., pre-carbonization at 400 °C and then pyrolysis at 700/800/900/1000 °C, NMC replicas with high BET specific surface areas exhibit excellent stability and recyclability as well as superb capacitance behavior (~413 F ⋅ g−1 in alkaline electrolyte. This research may provide a method to synthesize macroporous materials with continuous channels and hierarchical pores to enhance the infiltration and mass transfer not only used as electrode, but also as catalyst somewhere micro- or mesopores do not work well.

High-power quantum-dot superluminescent diodes with p-doped active region

NARCIS (Netherlands)

Rossetti, M.; Li, L.; Fiore, A.; Occhi, L.; Velez, C.; Mikhrin, S.; Kovsh, A.

2006-01-01

We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability

Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

Science.gov (United States)

Sahin, Bünyamin; Kaya, Tolga

2016-01-01

In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current-voltage (I-V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

Biomass-Derived Oxygen and Nitrogen Co-Doped Porous Carbon with Hierarchical Architecture as Sulfur Hosts for High-Performance Lithium/Sulfur Batteries

Directory of Open Access Journals (Sweden)

Yan Zhao

2017-11-01

Full Text Available In this work, a facile strategy to synthesize oxygen and nitrogen co-doped porous carbon (ONPC is reported by one-step pyrolysis of waste coffee grounds. As-prepared ONPC possesses highly rich micro/mesopores as well as abundant oxygen and nitrogen co-doping, which is applied to sulfur hosts as lithium/sulfur batteries’ appropriate cathodes. In battery testing, the sulfur/oxygen and nitrogen co-doped porous carbon (S/ONPC composite materials reveal a high initial capacity of 1150 mAh·g−1 as well as a reversible capacity of 613 mAh·g−1 after the 100th cycle at 0.2 C. Furthermore, when current density increases to 1 C, a discharge capacity of 331 mAh·g−1 is still attainable. Due to the hierarchical porous framework and oxygen/nitrogen co-doping, the S/ONPC composite exhibits a high utilization of sulfur and good electrochemical performance via the immobilization of the polysulfides through strong chemical binding.

Self-doped carbon architectures with heteroatoms containing nitrogen, oxygen and sulfur as high-performance anodes for lithium- and sodium-ion batteries

International Nuclear Information System (INIS)

Lu, Mingjie; Yu, Wenhua; Shi, Jing; Liu, Wei; Chen, Shougang; Wang, Xin; Wang, Huanlei

2017-01-01

Highlights: •Self-doped carbon architectures with nitrogen, oxygen, and sulfur are derived from Carrageen. •The obtained carbon materials exhibit excellent electrochemical property. •The strategy provides a one-step synthesis route to design advanced anodes for batteries. -- Abstract: Nitrogen, oxygen and sulfur tridoped porous carbons have been successfully synthesized from natural biomass algae-Carrageen by using a simultaneous carbonization and activation procedure. The doped carbons with sponge-like interconnected architecture, partially ordered graphitic structure, and abundant heteroatom doping perform outstanding features for electrochemical energy storage. When tested as lithium-ion battery anodes, a high reversible capacity of 839 mAh g −1 can be obtained at the current density of 0.1 A g −1 after 100 cycles, while a high capacity of 228 mAh g −1 can be maintained at 10 A g −1 . Tested against sodium, a high specific capacity of 227 can be delivered at 0.1 A g −1 after 100 cycles, while a high capacity of 109 mAh g −1 can be achieved at 10 A g −1 . These results turn out that the doped carbons would be potential anode materials for lithium- and sodium-ion batteries, which can be achieved by a one-step and large-scale synthesis route. Our observation indicates that heteroatom doping (especially sulfur) can significantly promote ion storage and reduce irreversible ion trapping to some extent. This work gives a general route for designing carbon nanostructures with heteroatom doping for efficient energy storage.

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

Gram-scale production of B, N co-doped graphene-like carbon for high performance supercapacitor electrodes

Science.gov (United States)

Chen, Zhuo; Hou, Liqiang; Cao, Yan; Tang, Yushu; Li, Yongfeng

2018-03-01

Boron and nitrogen co-doped graphene-like carbon (BNC) with a gram scale was synthesized via a two-step method including a ball-milling process and a calcination process and used as electrode materials for supercapacitors. High surface area and abundant active sites of graphene-like carbon were created by the ball-milling process. Interestingly, the nitrogen atoms are doped in carbon matrix without any other N sources except for air. The textual and chemical properties can be easily tuned by changing the calcination temperature, and at 900 oC the BNC with a high surface area (802.35 m2/g), a high boron content (2.19 at%), a hierarchical pore size distribution and a relatively high graphitic degree was obtained. It shows an excellent performance of high specific capacitance retention about 78.2% at high current density (199 F/g at 100 A/g) of the initial capacitance (254 F/g at 0.25 A/g) and good cycling stability (90% capacitance retention over 1000 cycles at 100 A/g) measured in a three-electrode system. Furthermore, in a two-electrode system, a specific capacitance of 225 F/g at 0.25 A/g and a good cycling stability (93% capacitance retention over 20,000 cycles at 25 A/g) were achieved by using BNC as electrodes. The strategy of synthesis is facile and effective to fabricate multi-doped graphene-like carbon for promising candidates as electrode materials in supercapacitors.

Biomass derived nitrogen-doped hierarchical porous carbon sheets for supercapacitors with high performance.

Science.gov (United States)

Wang, Cunjing; Wu, Dapeng; Wang, Hongju; Gao, Zhiyong; Xu, Fang; Jiang, Kai

2018-08-01

A facile potassium chloride salt-locking technique combined with hydrothermal treatment on precursors was explored to prepare nitrogen-doped hierarchical porous carbon sheets in air from biomass. Benefiting from the effective synthesis strategy, the as-obtained carbon possesses a unique nitrogen-doped thin carbon sheet structure with abundant hierarchical pores and large specific surface areas of 1459 m 2  g -1 . The doped nitrogen in carbon framework has a positive effect on the electrochemical properties of the electrode material, the thin carbon sheet structure benefits for fast ion transfer, the abundant meso-pores provide convenient channels for rapid charge transportation, large specific surface area and lots of micro-pores guarantee sufficient ion-storage sites. Therefore, applied for supercapacitors, the carbon electrode material exhibits an outstanding specific capacitance of 451 F g -1 at 0.5 A g -1 in a three-electrode system. Moreover, the assembled symmetric supercapacitor based on two identical carbon electrodes also displays high specific capacitance of 309 F g -1 at 0.5 A g -1 , excellent rate capacity and remarkable cycling stability with 99.3% of the initial capacitance retention after 10,000 cycles at 5 A -1 . The synthesis strategy avoids expensive inert gas protection and the use of corrosive KOH and toxic ZnCl 2 activated reagents, representing a promising green route to design advanced carbon electrode materials from biomass for high-capacity supercapacitors. Copyright © 2018. Published by Elsevier Inc.

Highly efficient electrochemical degradation of perfluorooctanoic acid (PFOA) by F-doped Ti/SnO{sub 2} electrode

Energy Technology Data Exchange (ETDEWEB)

Yang, Bo, E-mail: boyang@szu.edu.cn [Department of Environmental Engineering, College of Chemistry and Chemical Engineering, Shenzhen University, Shenzhen 518060 (China); School of Environment, POPs Research Center, Tsinghua University, Beijing 100084 (China); Jiang, Chaojin [Department of Environmental Engineering, College of Chemistry and Chemical Engineering, Shenzhen University, Shenzhen 518060 (China); Yu, Gang, E-mail: yg-den@tsinghua.edu.cn [School of Environment, POPs Research Center, Tsinghua University, Beijing 100084 (China); Zhuo, Qiongfang [South China Institute of Environmental Sciences, The Ministry of Environment Protection, Guangzhou 510655 (China); Deng, Shubo [School of Environment, POPs Research Center, Tsinghua University, Beijing 100084 (China); Wu, Jinhua [School of Environment and Energy, South China University of Technology, Guangzhou 510006 (China); Zhang, Hong [Department of Environmental Engineering, College of Chemistry and Chemical Engineering, Shenzhen University, Shenzhen 518060 (China)

2015-12-15

Highlights: • A novel SnO{sub 2} electrode is prepared by F doping instead of the traditional Sb doping. • SnF{sub 4} as single-source precursor is used to fabricate the long-life Ti/SnO{sub 2}–F anode. • F-doped Ti/SnO{sub 2} anode possesses high OEP and decomposition ability for PFOA. • Further mechanistic detail of PFOA degradation on Ti/SnO{sub 2}–F electrode is proposed. - Abstract: The novel F-doped Ti/SnO{sub 2} electrode prepared by SnF{sub 4} as the single-source precursor was used for electrochemical degradation of aqueous perfluorooctanoic acid (PFOA). Higher oxidation reactivity and significantly longer service life were achieved for Ti/SnO{sub 2}–F electrode than Ti/SnO{sub 2}–X (X = Cl, Br, I, or Sb) electrode, which could decomposed over 99% of PFOA (50 mL of 100 mg L{sup −1}) within 30-min electrolysis. The property of Ti/SnO{sub 2}–F electrode and its electrooxidation mechanism were investigated by XRD, SEM–EDX, EIS, LSV, and interfacial resistance measurements. We propose that the similar ionic radii of F and O as well as strong electronegativity of F caused its electrochemical stability with high oxygen evolution potential (OEP) and smooth surface to generate weakly adsorbed ·OH. The preparation conditions of electrode were also optimized including F doping amount, calcination temperature, and dip coating times, which revealed the formation process of electrode. Additionally, the major mineralization product, F{sup −}, and low concentration of shorter chain perfluorocarboxylic acids (PFCAs) were detected in solution. So the reaction pathway of PFOA electrooxidation was proposed by intermediate analysis. These results demonstrate that Ti/SnO{sub 2}–F electrode is promising for highly efficient treatment of PFOA in wastewater.

Evaluation of new 5 inch photomultiplier for use in threshold Cherenkov detectors with aerogel radiator

International Nuclear Information System (INIS)

Wojtsekhowski, B.; Zorn, C.; Flyckt, S.O.

2000-01-01

A cost effective alternative to UV-sensitive 5 inch PMTs often used with threshold Aerogel Cherenkov detectors has been developed and tested. The photomultiplier -XP4572-is a variation of the Photonis XP4512 glass window tube with improved electron collection efficiency. Fast timing and high gain were only moderately compromised. The effective quantum efficiency has been measured as twice that of a Burle 8854 Quantacon when exposed to a Cherenkov spectrum generated by Ru-106 electrons (les;3.54 MeV) through 1 cm of high index, high transparency Matsushita Electric aerogel (n=1.05). This new phototube is being installed in an aerogel-based Cherenkov detector for Hall A at Jefferson Lab

Ferromagnetism in doped or undoped spintronics nanomaterials

Science.gov (United States)

Qiang, You

2010-10-01

Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

Highly reproducible alkali metal doping system for organic crystals through enhanced diffusion of alkali metal by secondary thermal activation.

Science.gov (United States)

Lee, Jinho; Park, Chibeom; Song, Intek; Koo, Jin Young; Yoon, Taekyung; Kim, Jun Sung; Choi, Hee Cheul

2018-05-16

In this paper, we report an efficient alkali metal doping system for organic single crystals. Our system employs an enhanced diffusion method for the introduction of alkali metal into organic single crystals by controlling the sample temperature to induce secondary thermal activation. Using this system, we achieved intercalation of potassium into picene single crystals with closed packed crystal structures. Using optical microscopy and Raman spectroscopy, we confirmed that the resulting samples were uniformly doped and became K 2 picene single crystal, while only parts of the crystal are doped and transformed into K 2 picene without secondary thermal activation. Moreover, using a customized electrical measurement system, the insulator-to-semiconductor transition of picene single crystals upon doping was confirmed by in situ electrical conductivity and ex situ temperature-dependent resistivity measurements. X-ray diffraction studies showed that potassium atoms were intercalated between molecular layers of picene, and doped samples did not show any KH- nor KOH-related peaks, indicating that picene molecules are retained without structural decomposition. During recent decades, tremendous efforts have been exerted to develop high-performance organic semiconductors and superconductors, whereas as little attention has been devoted to doped organic crystals. Our method will enable efficient alkali metal doping of organic crystals and will be a resource for future systematic studies on the electrical property changes of these organic crystals upon doping.

Phosphoric acid doped imidazolium polysulfone membranes for high temperature proton exchange membrane fuel cells

DEFF Research Database (Denmark)

Yang, Jingshuai; Li, Qingfeng; Jensen, Jens Oluf

2012-01-01

A novel acid–base polymer membrane is prepared by doping of imidazolium polysulfone with phosphoric acid for high temperature proton exchange membrane fuel cells. Polysulfone is first chloromethylated, followed by functionalization of the chloromethylated polysulfone with alkyl imidazoles i.e. me...

Nitrogen-doped diamond electrode shows high performance for electrochemical reduction of nitrobenzene

International Nuclear Information System (INIS)

Zhang, Qing; Liu, Yanming; Chen, Shuo; Quan, Xie; Yu, Hongtao

2014-01-01

Highlights: • A metal-free nitrogen-doped diamond electrode was synthesized. • The electrode exhibits high electrocatalytic activity for nitrobenzene reduction. • The electrode exhibits high selectivity for reduction of nitrobenzene to aniline. • High energy efficiency was obtained compared with graphite electrode. -- Abstract: Effective electrode materials are critical to electrochemical reduction, which is a promising method to pre-treat anti-oxidative and bio-refractory wastewater. Herein, nitrogen-doped diamond (NDD) electrodes that possess superior electrocatalytic properties for reduction were fabricated by microwave-plasma-enhanced chemical vapor deposition technology. Nitrobenzene (NB) was chosen as the probe compound to investigate the material's electro-reduction activity. The effects of potential, electrolyte concentration and pH on NB reduction and aniline (AN) formation efficiencies were studied. NDD exhibited high electrocatalytic activity and selectivity for reduction of NB to AN. The NB removal efficiency and AN formation efficiency were 96.5% and 88.4% under optimal conditions, respectively; these values were 1.13 and 3.38 times higher than those of graphite electrodes. Coulombic efficiencies for NB removal and AN formation were 27.7% and 26.1%, respectively; these values were 4.70 and 16.6 times higher than those of graphite electrodes under identical conditions. LC–MS analysis revealed that the dominant reduction pathway on the NDD electrode was NB to phenylhydroxylamine (PHA) to AN

Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

International Nuclear Information System (INIS)

Sahin, Bünyamin; Kaya, Tolga

2016-01-01

Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

Energy Technology Data Exchange (ETDEWEB)

Sahin, Bünyamin, E-mail: sahin38@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay, 31034 (Turkey); School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Kaya, Tolga [School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, 48859 (United States)

2016-01-30

Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

Highly flexible and robust N-doped SiC nanoneedle field emitters

KAUST Repository

Chen, Shanliang

2015-01-23

Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

Highly flexible and robust N-doped SiC nanoneedle field emitters

KAUST Repository

Chen, Shanliang; Ying, Pengzhan; Wang, Lin; Wei, Guodong; Gao, Fengmei; Zheng, Jinju; Shang, Minhui; Yang, Zuobao; Yang, Weiyou; Wu, Tao

2015-01-01

Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

Ultramicroporous carbon with extremely narrow pore distribution and very high nitrogen doping for efficient methane mixture gases upgrading

KAUST Repository

Yao, Kexin

2017-06-24

It is notably challenging to fabricate heavily heteroatom-doped porous carbonaceous materials with narrow ultramicropore size distributions for highly effective mixed-gas separation. In this study, new carbon-based materials with narrow ultramicropore size (<7 Å) distributions (>95%) and high N doping contents (>10 at%) are fabricated through the pyrolysis of a perchloro-substituted porous covalent triazine-based framework (ClCTF). In particular, the sample prepared at 650 °C (ClCTF-1-650) possesses the highest ultramicropores content (98%) and large N content (12 at%) and demonstrates a very high CH and CO capacity, as well as a low N uptake under ambient conditions. The extraordinarily high CH/N and CO/N selectivities correlate with both the ideal adsorption solution theory (IAST) method and performed dynamic separation experiments (breakthrough experiments). The results reported in this study far exceed the CH/N and CO/N selectivities of previously reported carbon-based adsorbents including various nitrogen-doped ones. These results are believed to be associated with the unusually high N content, as well as the suitably narrow ultramicropore size distribution. This report introduces a new pathway to design porous absorbents with precisely controlled ultramicropores for gas separation.

Highly scalable, resonantly cladding-pumped, Er-doped fiber laser with record efficiency.

Science.gov (United States)

Dubinskii, M; Zhang, J; Ter-Mikirtychev, V

2009-05-15

We report the performance of a resonantly cladding-pumped, Yb-free, Er-doped fiber laser. We believe this is the first reported resonantly cladding-pumped fiber-Bragg-grating-based, Er-doped, large-mode-area (LMA) fiber laser. The laser, pumped by fiber-coupled InGaAsP/InP laser diode modules at 1,532.5 nm, delivers approximately 48 W of cw output at 1,590 nm. It is believed to be the highest power ever reported from a Yb-free Er-doped LMA fiber. This fully integrated laser also has the optical-to-optical efficiency of approximately 57%, to the best of our knowledge, the highest efficiency reported for cladding-pumped unidirectionally emitting Er-doped laser.

Worcester 1 Inch Solenoid-Actuated Gas Operated SCHe System Valves

International Nuclear Information System (INIS)

VAN KATWIJK, C.

2000-01-01

1 inch Gas-operated full-port ball valves incorporate a solenoid and limit switches as integral parts of the actuator. These valves are normally open and fail safe to the open position (GOV-1*02 and 1*06 fail closed) to provide a flow path of helium gas to the MCO under helium purge and off-normal conditions when the MCO is isolated

Health physics challenges involved with opening a "seventeen-inch" concrete waste vault.

Science.gov (United States)

Sullivan, Patrick T; Pizzulli, Michelle

2005-05-01

This paper describes the various activities involved with opening a sealed legacy "Seventeen-inch" concrete vault and the health physics challenges and solutions employed. As part of a legacy waste stream that was removed from the former Hazardous Waste Management Facility at Brookhaven National Laboratory, the "Seventeen-inch" concrete vault labeled 1-95 was moved to the new Waste Management Facility for ultimate disposal. Because the vault contained 239Pu foils with a total activity in excess of the transuranic waste limits, the foils needed to be removed and repackaged for disposal. Conventional diamond wire saws could not be used because of facility constraints, so this project relied mainly on manual techniques. The planning and engineering controls put in place enabled personnel to open the vault and remove the waste while keeping dose as low as reasonably achievable.

Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

International Nuclear Information System (INIS)

Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

2006-01-01

The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

Band gap tunning in BN-doped graphene systems with high carrier mobility

KAUST Repository

Kaloni, T. P.

2014-02-17

Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

Improved ferroelectric and pyroelectric properties of Pb-doped SrBi4Ti4O15 ceramics for high temperature applications

International Nuclear Information System (INIS)

Venkata Ramana, E.; Graça, M.P.F.; Valente, M.A.; Bhima Sankaram, T.

2014-01-01

Highlights: • Sr 1−x Pb x Bi 4 Ti 4 O 15 (SPBT, x = 0 − 0.4) ceramics were synthesized by soft chemical method. • X-ray diffraction analysis confirmed the formation of bismuth layered structure. • SEM images showed plate like grain morphology with random orientation of plate faces. • Pb-doping resulted in improved ferroelectricity of SrBi 4 Ti 4 O 15 ceramics. • Pb-doped SrBi 4 Ti 4 O 15 exhibited improved pyroelectric properties with high T C . -- Abstract: Ferroelectric properties of Pb-modified strontium bismuth titanate ceramics with chemical formula Sr 1−x Pb x Bi 4 Ti 4 O 15 (x = 0–0.4) were investigated. Polycrystalline ceramics were synthesized by soft chemical method to study the effect of Pb-doping on its physical properties. X-ray diffraction analysis revealed a bismuth layered structure for all the compounds. The doping resulted in an increased tetragonal strain and improved ferroelectric properties. Scanning electron microscope images showed plate like grain morphology with random orientation of platelets. The ferroelectric transition temperature of the ceramics increased systematically from 525 °C to 560 °C with the increase of doping concentration. The piezoelectric coefficient (d 33 ) of the ceramics was enhanced significantly with Pb doping, exhibiting a maximum value of 21.8 pC/N for 40 mol.% Pb-doped SBT. Pyroelectric studies carried out using the Byer–Roundy method indicated that the modified SBT ceramics are promising candidates for high temperature pyroelectric applications

Optimization of E r-density profile for efficient pumping and high signal gain in Erbium-doped fiber amplifiers

International Nuclear Information System (INIS)

Arzi, E.; Hassani, A.; Esmaili Seraji, F.

2000-01-01

Recently, the Erbium-Doped Fiber Amplifier has been shown to have a great potentiality in Fiber-Optics Communication. A model is suggested for calculating the E r-density profile, using the propagation and rate equations of a homogeneous two-level laser medium in Erbium-Doped Fiber Amplifier, such that efficient pumping and high signal gain is achieved for different fiber waveguide structure. The result of this numerical calculation shows that the gain, compared with the gain of the existing Erbium-Doped Fiber Amplifier, is higher by a factor of 3.5. This model is applicable in all active waveguides and any other dopant as well

Progress on erbium-doped waveguide components

DEFF Research Database (Denmark)

Bjarklev, Anders Overgaard; Berendt, Martin Ole; Broeng, Jes

1997-01-01

The recent development in erbium-doped fiber amplifiers, and fiber lasers is reviewed. Also the latest results on planar erbium-doped waveguide amplifiers and high erbium concentration characterisation methods are presented...

Excitons and trions in modulation doped structures in high magnetic fields

International Nuclear Information System (INIS)

Kochereshko, V.; Andronikov, D.; Platonov, A.; Crooker, S.; Barrick, T.; Karczewski, G.; Tronc, P.

2004-01-01

Photoluminescence spectra of modulation-doped CdTe/CdMgTe quantum well structures containing two-dimensional electron gases of low, moderate and high electron concentrations were studied in high magnetic fields up to 45 T. The recombination line of triplet trion state was found in the spectra. A model calculation of photoluminescence spectra in magnetic fields, which takes into account singlet and triplet trion states, was carried out. It was shown that the dark triplet becomes observable in photoluminescence spectra because it becomes the only recombination channel when the formation of the singlet trion state is suppressed by magnetic fields. (author)

Nitrogen-doped mesoporous carbons for high performance supercapacitors

Science.gov (United States)

Wu, Kai; Liu, Qiming

2016-08-01

The mesoporous carbons have been synthesized by using α-D(+)-Glucose, D-Glucosamine hydrochloride or their mixture as carbon precursors and mesoporous silicas (SBA-15 or MCF) as hard templates. The as-prepared products show a large pore volume (0.59-0.97 cm3 g-1), high surface areas (352.72-1152.67 m2 g-1) and rational nitrogen content (ca. 2.5-3.9 wt.%). The results of electrochemical tests demonstrate that both heteroatom doping and suitable pore structure play a decisive role in the performance of supercapacitors. The representative sample of SBA-15 replica obtained using D-Glucosamine hydrochloride only exhibits high specific capacitance (212.8 F g-1 at 0.5 A g-1) and good cycle durability (86.1% of the initial capacitance after 2000 cycles) in 6 M KOH aqueous electrolyte, which is attributed to the contribution of double layer capacitance and pseudo-capacitance. The excellent electrochemical performance makes it a promising electrode material for supercapacitors.

Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

Science.gov (United States)

Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

2015-03-12

Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

MLEP-Fail calibration for 1/8 inch thick cast plate of 17-4 steel.

Energy Technology Data Exchange (ETDEWEB)

Corona, Edmundo [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2018-02-01

The purpose of the work presented in this memo was to calibrate the Sierra material model Multilinear Elastic-Plastic Hardening Model with Failure (MLEP-Fail) for 1/8 inch thick cast plate of 17-4 steel. The calibration approach is essentially the same as that recently used in a previous memo using data from smooth and notched tensile specimens. The notched specimens were manufactured with three notch radii R = 1=8, 1/32 and 1/64 inches. The dimensions of the smooth and notched specimens are given in the prints in Appendix A. Two cast plates, Plate 3 and Plate 4, with nominally identical properties were considered.

A high-performance mesoporous carbon supported nitrogen-doped carbon electrocatalyst for oxygen reduction reaction

Science.gov (United States)

Xu, Jingjing; Lu, Shiyao; Chen, Xu; Wang, Jianan; Zhang, Bo; Zhang, Xinyu; Xiao, Chunhui; Ding, Shujiang

2017-12-01

Investigating low-cost and highly active electrocatalysts for oxygen reduction reactions (ORR) is of crucial importance for energy conversion and storage devices. Herein, we design and prepare mesoporous carbon supported nitrogen-doped carbon by pyrolysis of polyaniline coated on CMK-3. This electrocatalyst exhibits excellent performance towards ORR in alkaline media. The optimized nitrogen-doped mesoporous electrocatalyst show an onset potential (E onset) of 0.95 V (versus reversible hydrogen electrode (RHE)) and half-wave potential (E 1/2) of 0.83 V (versus RHE) in 0.1 M KOH. Furthermore, the as-prepared catalyst presents superior durability and methanol tolerance compared to commercial Pt/C indicating its potential applications in fuel cells and metal-air batteries.

Lithium decoration of three dimensional boron-doped graphene frameworks for high-capacity hydrogen storage

International Nuclear Information System (INIS)

Wang, Yunhui; Meng, Zhaoshun; Liu, Yuzhen; You, Dongsen; Wu, Kai; Lv, Jinchao; Wang, Xuezheng; Deng, Kaiming; Lu, Ruifeng; Rao, Dewei

2015-01-01

Based on density functional theory and the first principles molecular dynamics simulations, a three-dimensional B-doped graphene-interconnected framework has been constructed that shows good thermal stability even after metal loading. The average binding energy of adsorbed Li atoms on the proposed material (2.64 eV) is considerably larger than the cohesive energy per atom of bulk Li metal (1.60 eV). This value is ideal for atomically dispersed Li doping in experiments. From grand canonical Monte Carlo simulations, high hydrogen storage capacities of 5.9 wt% and 52.6 g/L in the Li-decorated material are attained at 298 K and 100 bars

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

Directory of Open Access Journals (Sweden)

Luis H. da S. Lacerda

2016-04-01

Full Text Available ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT allied to hybrid functional B3LYP. The Ba-doping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (Eg at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.

Yb-doped phosphate double-cladding optical fiber for high-power laser applications

Science.gov (United States)

Mura, E.; Scarpignato, G. C.; Lousteau, J.; Boetti, N. G.; Abrate, S.; Milanese, D.

2013-02-01

A Yb-doped phosphate glass double cladding optical fiber was prepared using a custom designed glass composition (P2O5 - Al2O3 - Li2O - B2O3 - BaO - PbO - La2O3) for high-power amplifier and laser applications. The preform drawing method was followed, with the preform being fabricated using the rotational casting technique. This technique, previously developed for tellurite, fluoride or chalcogenide glass preforms is reported for the first time using rare earth doped phosphate glasses. The main challenge was to design an adequate numerical aperture between first and second cladding while maintaining similar thermo-mechanical properties in view of the fiber drawing process. The preform used for the fiber drawing was produced by rod-in-tube technique at a rotation speed of 3000 rpm. The rotational casting technique allowed the manufacturing of an optical fiber featuring high quality interfaces between core and internal cladding and between the internal and external cladding, respectively. Loss attenuation was measured using the cut-back method and lasing was demonstrated at 1022 nm by core pumping with a fiber pigtailed laser diode at the wavelength of 976 nm.

Enhanced thermoelectric property of oxygen deficient nickel doped SnO2 for high temperature application

Science.gov (United States)

Paulson, Anju; Sabeer, N. A. Muhammad; Pradyumnan, P. P.

2018-04-01

Motivated by the detailed investigation on the thermoelectric performance of oxide materials our work concentrated on the influence of acceptor dopants and defect density in the lattice plane for the enhancement of thermoelectric power. The series of Sn1‑x Nix O2 (0.01 ≤ x ≤ 0.05) compositions were prepared by solid state reaction mechanism and found that 3 atomic percentage Ni doped SnO2 can be considered as a good candidate due to its promising electrical and transport properties. Defect lattices were introduced in the sample and the deviation from oxygen stochiometry was ensured using photoluminescence measurement. High power factor was obtained for the 3 atomic percentage nickel doped SnO2 due to the effective number of charge carrier concentration and the depletion of oxygen rich layers. Defect centered and acceptor doped SnO2 lattice opens a new door for energy harvesting at higher temperatures.

Structural transitions and multiferroic properties of high Ni-doped BiFeO3

Science.gov (United States)

Betancourt-Cantera, L. G.; Bolarín-Miró, A. M.; Cortés-Escobedo, C. A.; Hernández-Cruz, L. E.; Sánchez-De Jesús, F.

2018-06-01

Nickel doped bismuth ferrite powders, BiFe1-x NixO3 (0 ≤ x ≤ 0.5), were synthesized by high-energy ball milling followed by an annealing at 700 °C. A detailed study about the substitution of Fe3+ by Ni2+ on the crystal structure and multiferroic properties is presented. The X-ray diffraction patterns reveal the formation of rhombohedral structure with small amounts of Bi2Fe4O9 as a secondary phase for x behavior indicates the frustration of the G-antiferromagnetic order typical of the un-doped BiFeO3, caused by the presence of small amounts of Ni2+ (x Behavior modifications of electrical conductivity, permittivity and dielectric loss versus frequency are related with crystal structure transformations, when nickel concentration is increased.

Oxygen-doped Sb{sub 4}Te phase change films for high-temperature data retention and low-power application

Energy Technology Data Exchange (ETDEWEB)

Hu, Yifeng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Mathematics and Physics, Jiangsu Teachers University of Technology, Changzhou 213001 (China); Sun, Mingcheng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

2013-02-25

Highlights: Black-Right-Pointing-Pointer O-doped Sb{sub 4}Te phase-change films were reported. Black-Right-Pointing-Pointer The amorphous-to-crystalline transitions of O-doped Sb{sub 4}Te films were studied. Black-Right-Pointing-Pointer By doping oxygen, the stability of Sb{sub 4}Te films is improved greatly. Black-Right-Pointing-Pointer The resistance of the Sb{sub 4}Te films increases by doping oxygen. - Abstract: The amorphous-to-crystalline transitions of oxygen-doped Sb{sub 4}Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb{sub 4}Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29 Degree-Sign C of undoped Sb{sub 4}Te film to 102 Degree-Sign C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge{sub 2}Sb{sub 2}Te{sub 5} film.

SnO2 nanocrystals anchored on N-doped graphene for high-performance lithium storage.

Science.gov (United States)

Zhou, Wei; Wang, Jinxian; Zhang, Feifei; Liu, Shumin; Wang, Jianwei; Yin, Dongming; Wang, Limin

2015-02-28

A SnO2-N-doped graphene (SnO2-NG) composite is synthesized by a rapid, facile, one-step microwave-assisted solvothermal method. The composite exhibits excellent lithium storage capability and high durability, and is a promising anode material for lithium ion batteries.

Potential thermoelectric performance of hole-doped Cu2O

International Nuclear Information System (INIS)

Chen, Xin; Parker, David; Du, Mao-Hua; Singh, David J

2013-01-01

High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show, based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory in the relaxation time approximation, that hole-doped Cu 2 O may be such a material. We find that hole-doped Cu 2 O has a high thermopower of above 200 μV K −1 even with doping levels as high as 5.2 × 10 20 cm −3 at 500 K, mainly attributed to the heavy valence bands of Cu 2 O. This is reminiscent of the cobaltate family of high-performance oxide thermoelectrics and implies that hole-doped Cu 2 O could be an excellent thermoelectric material if suitably doped. (paper)

Long-Period Gratings in Highly Germanium-Doped, Single-Mode Optical Fibers for Sensing Applications

Science.gov (United States)

Schlangen, Sebastian; Bremer, Kort; Zheng, Yulong; Böhm, Sebastian; Steinke, Michael; Wellmann, Felix; Neumann, Jörg; Overmeyer, Ludger

2018-01-01

Long-period fiber gratings (LPGs) are well known for their sensitivity to external influences, which make them interesting for a large number of sensing applications. For these applications, fibers with a high numerical aperture (i.e., fibers with highly germanium (Ge)-doped fused silica fiber cores) are more attractive since they are intrinsically photosensitive, as well as less sensitive to bend- and microbend-induced light attenuations. In this work, we introduce a novel method to inscribe LPGs into highly Ge-doped, single-mode fibers. By tapering the optical fiber, and thus, tailoring the effective indices of the core and cladding modes, for the first time, an LPG was inscribed into such fibers using the amplitude mask technique and a KrF excimer laser. Based on this novel method, sensitive LPG-based fiber optic sensors only a few millimeters in length can be incorporated in bend-insensitive fibers for use in various monitoring applications. Moreover, by applying the described inscription method, the LPG spectrum can be influenced and tailored according to the specific demands of a particular application. PMID:29702600

Long-Period Gratings in Highly Germanium-Doped, Single-Mode Optical Fibers for Sensing Applications

Directory of Open Access Journals (Sweden)

Sebastian Schlangen

2018-04-01

Full Text Available Long-period fiber gratings (LPGs are well known for their sensitivity to external influences, which make them interesting for a large number of sensing applications. For these applications, fibers with a high numerical aperture (i.e., fibers with highly germanium (Ge-doped fused silica fiber cores are more attractive since they are intrinsically photosensitive, as well as less sensitive to bend- and microbend-induced light attenuations. In this work, we introduce a novel method to inscribe LPGs into highly Ge-doped, single-mode fibers. By tapering the optical fiber, and thus, tailoring the effective indices of the core and cladding modes, for the first time, an LPG was inscribed into such fibers using the amplitude mask technique and a KrF excimer laser. Based on this novel method, sensitive LPG-based fiber optic sensors only a few millimeters in length can be incorporated in bend-insensitive fibers for use in various monitoring applications. Moreover, by applying the described inscription method, the LPG spectrum can be influenced and tailored according to the specific demands of a particular application.

Microwave-Hydrothermal Synthesis and Characterization of High-Purity Nb Doped BaTiO3 Nanocrystals

Directory of Open Access Journals (Sweden)

A. Khanfekr

2014-01-01

Full Text Available The synthesis of Nb doped BaTiO3 has been investigated under Microwave-Hydrothermal (MH conditions in the temperature of 150°C for only 2 h using C16H36O4Ti, BaH2O2.8H2O and NbCl5 as Ba, Ti and  Nb sources, respectively.  Typical experiments performed on MH processing have not yet reported for Nb doped BaTiO3.  In the MH process, the formation of high purity nano tetragonal Nb-BaTiO3 was strongly enhanced. New hydrothermal method was used instead of the previous solid state reaction for the BaTiO3±Nb2O3 system. The new method uses high pressure to create nano dimension particles in a lower time and temperature. In case of the phase evolution studies, the XRD pattern measurements and Raman spectroscopy were performed. TEM and FE-SEM images were taken for the detailed analysis of the particle size, surface and morphology.  Synthesis of Nb doped BaTiO3 with the Microwave-hydrothermal provides an advantage of fast crystallization and reduced crystal size when compared to existing methods.

Highly active Ni/Y-doped ZrO{sub 2} catalysts for CO{sub 2} methanation

Energy Technology Data Exchange (ETDEWEB)

Takano, H., E-mail: takano_hi@hitachizosen.co.jp [Hitachi Zosen Corporation, Kashiwa, 277-8515 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, 060-8628 (Japan); Kirihata, Y.; Izumiya, K.; Kumagai, N. [Hitachi Zosen Corporation, Kashiwa, 277-8515 (Japan); Habazaki, H., E-mail: habazaki@eng.hokudai.ac.jp [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, 060-8628 (Japan); Division of Applied Chemistry & Frontier Chemistry Center, Faculty of Engineering, Hokkaido University, Sapporo, 060-8628 (Japan); Hashimoto, K. [Tohoku Institute of Technology, Sendai, 277-8515 (Japan)

2016-12-01

Highlights: • The Ni/Y-doped ZrO{sub 2} catalysts show highly catalytic activity for CO{sub 2} methanation. • Bidentate carbonate is a major adsorption spice on the Ni/Y-doped ZrO{sub 2} catalysts. • The oxide support of t-ZrO{sub 2} and/or c-ZrO{sub 2} with oxygen vacancies plays a key role. - Abstract: The catalytic methanation of CO{sub 2} was carried out on Ni catalysts supported on Y-doped ZrO{sub 2} with various Y{sup 3+} concentrations and Ni/(Zr + Y) molar ratio = 1. The catalysts were characterized by X-ray diffraction, scanning transmission electron microscopy, specific surface area, temperature-programmed desorption of CO{sub 2}, and temperature-programmed reaction. In addition, operando diffuse-reflectance infrared Fourier-transform spectroscopy (DRIFT) was used to identify the adsorbed reaction intermediate. Catalysts supported on Y-doped ZrO{sub 2} show higher catalytic activity than the catalyst on Y-free ZrO{sub 2} with a monoclinic ZrO{sub 2} phase. The catalytic activity is also dependent upon the Y{sup 3+} concentration, and the highest activity was obtained for the catalyst with a Y/(Zr + Y) molar ratio of 0.333, which consists mainly of fcc Ni and cubic ZrO{sub 2} phase. Y{sup 3+} doping into ZrO{sub 2} introduces oxygen vacancies, which play an important role in enhancing the catalytic activity. The operando DRIFT study reveals that a CO adsorption intermediate is absent, and bidentate carbonate is an important intermediate for CH{sub 4} formation.

Doping and musculoskeletal system: short-term and long-lasting effects of doping agents.

Science.gov (United States)

Nikolopoulos, Dimitrios D; Spiliopoulou, Chara; Theocharis, Stamatios E

2011-10-01

Doping is a problem that has plagued the world of competition and sports for ages. Even before the dawn of Olympic history in ancient Greece, competitors have looked for artificial means to improve athletic performance. Since ancient times, athletes have attempted to gain an unfair competitive advantage through the use of doping substances. A Prohibited List of doping substances and methods banned in sports is published yearly by the World Anti-Doping Agency. Among the substances included are steroidal and peptide hormones and their modulators, stimulants, glucocorticosteroids, β₂-agonists, diuretics and masking agents, narcotics, and cannabinoids. Blood doping, tampering, infusions, and gene doping are examples of prohibited methods indicated on the List. Apart from the unethical aspect of doping, as it abrogates fair-play's principle, it is extremely important to consider the hazards it presents to the health and well-being of athletes. The referred negative effects for the athlete's health have to do, on the one hand, by the high doses of the performance-enhancing agents and on the other hand, by the relentless, superhuman strict training that the elite or amateur athletes put their muscles, bones, and joints. The purpose of this article is to highlight the early and the long-lasting consequences of the doping abuse on bone and muscle metabolism. © 2010 The Authors Fundamental and Clinical Pharmacology © 2010 Société Française de Pharmacologie et de Thérapeutique.

Pseudocapacitance of amorphous TiO2@nitrogen doped graphene composite for high rate lithium storage

International Nuclear Information System (INIS)

Li, Sheng; Xue, Pan; Lai, Chao; Qiu, Jingxia; Ling, Min; Zhang, Shanqing

2015-01-01

The high rate applications such as electric vehicles of the traditional lithium ion batteries (LIBs) are commonly limited by their insufficient electron conductivity and slow mass transport of lithium ions in bulk electrode materials. In order to address these issues, in this work, a simple and up-scalable wet-mechanochemical (wet-ball milling) route has been developed for fabrication of amorphous porous TiO 2 @nitrogen doped graphene (TiO 2 @N-G) nanocomposites. The amorphous phase, unique porous structure of TiO 2 and the surface defects from nitrogen doping to graphene planes have incurred surface controlled reactions, contributing pseudocapacitance to the total capacity of the battery. It plays a dominant role in producing outstanding high rate electrochemical performance, e.g., 182.7 mAh/g (at 3.36 A/g) after 100 cycles. The design and synthesis of electrode materials with enhanced conductivity and surface pseudocapacitance can be a promising way for high rate LIBs.

The effects of carbon nano filaments (CNT and CNF) doping on high temperature superconductors Y-123

International Nuclear Information System (INIS)

Dadras, S.; Daadmehr, V.

2007-01-01

Full text: This paper is based on the effects of carbon nano filaments (carbon nano tubes and carbon nano fibers) doping on Y-123 studies. We synthesized Y-123 with different contents of CNT and CNF doping. The samples were prepared from powders of Y 2 O 3 , BaCO 3 and Cu O by the solid state reaction. After calcination in air, we mixed Y-123 powder with different percentage of carbon nano filaments weight, produced by the CVD method. For obtaining more homogenous mixing, we have suspended it in an organic solvent with an ultrasonic mixer to prevent agglomeration of CNT. The CNT-Y-123 powder was dried afterwards, and pressed as pellet samples, in about 1mm thick, 10mm diameter, and 1gr weight, and sintered in oxygen atmosphere. We tried to find the transport effects on CNT and CNF doping in 123 systems. The strong coupling between grains in CNT doped samples caused the flow of inter-granular currents. Therefore the presence of CNT in high temperature superconductor samples increases the critical current density. Among various carbon precursors, carbon nano tubes (CNT) are very interesting because of their nano meter diameter which may make them as effective pinning centers, compared to the ordinary carbon. The carbon nano tubes are functioning like columnar defects produced by heavy-ion irradiation. Nano phase particles or aggregates embodied in the superconductor matrix can pin the flux lines effectively and enhance the intra-grain transport critical current density in high applied magnetic fields. Nano phase size particles in the size range of about 5-10 nm can be used as flux pinning centers for low field applications. The effects of carbon and carbon dioxide in Y-123 were studied by several groups, but none of them argued the effects of carbon nano tubes doping on Y-123. Uno et al. found that Jc was related to the carbon concentration, but they showed that Tc value and other physical properties did not change. In carbon doped Y-123 samples, Tc decreases with

Ultra-high Rates and Reversible Capacity of Li-S Battery with a Nitrogen-doping Conductive Lewis Base Matrix

International Nuclear Information System (INIS)

Cao, Yong; Li, Xi-long; Zheng, Ming-sen; Yang, Mao-ping; Yang, Xu-lai; Dong, Quan-feng

2016-01-01

Highlights: • A polypyrrole/reduced graphene oxide (PPy/rGO) composite was prepared from in-situ hybridization of graphene oxide and pyrrole without additional oxidant. • Nitrogen doped graphene (NG) was obtained from the calcination of the PPy/rGO composite under 1500 °C and was confirmed with abundant pyridinic type nitrogen doping. • NG was employed as a conductive Lewis base matrix of sulfur cathode and the obtained composite cathode exhibited ultra-high rates and reversible capacity. • The excellent electrochemical performance can be attributed to the efficient adsorption of Li 2 S n (n=4-8) on the pyridinic-N enriched NG surface. - Abstract: To improve the electrochemical performance of lithium sulfur batteries, a conductive Lewis base matrix, nitrogen doped graphene (NG), was prepared here through a facile strategy of annealing a polypyrrole/reduced graphene oxide composite. The obtained NG was demonstrated with enriched pyridinic-N doping and was employed as the matrix of sulfur cathode with ultra-high rates, reversible capacity and high coulombic efficiency. The improved performance can be attributed to the high conductivity of the NG and the enhanced adsorption energy of Li 2 S n (n=4-8) on the NG surface. The NG can act not only as an electronic conductive network but also as a Lewis base “catalyst” matrix that promotes the higher Li 2 S n to be further oxidized completely to S 8 as demonstrated in the cyclic voltammetry curve, which can thus significantly improve the sulfur utilization and cyclic stability even at a high sulfur loading of 75% (w/w) in the S@NG composite.

Optimization of Electrochemical Performance of LiFePO4/C by Indium Doping and High Temperature Annealing

Directory of Open Access Journals (Sweden)

Ajay Kumar

2017-10-01

Full Text Available We have prepared nano-structured In-doped (1 mol % LiFePO4/C samples by sol–gel method followed by a selective high temperature (600 and 700 °C annealing in a reducing environment of flowing Ar/H2 atmosphere. The crystal structure, particle size, morphology, and magnetic properties of nano-composites were characterized by X-ray diffraction (XRD, scanning electron microsopy (SEM, transmission electron microscopy (TEM, and 57Fe Mössbauer spectroscopy. The Rietveld refinement of XRD patterns of the nano-composites were indexed to the olivine crystal structure of LiFePO4 with space group Pnma, showing minor impurities of Fe2P and Li3PO4 due to decomposition of LiFePO4. We found that the doping of In in LiFePO4/C nanocomposites affects the amount of decomposed products, when compared to the un-doped ones treated under similar conditions. An optimum amount of Fe2P present in the In-doped samples enhances the electronic conductivity to achieve a much improved electrochemical performance. The galvanostatic charge/discharge curves show a significant improvement in the electrochemical performance of 700 °C annealed In-doped-LiFePO4/C sample with a discharge capacity of 142 mAh·g−1 at 1 C rate, better rate capability (~128 mAh·g−1 at 10 C rate, ~75% of the theoretical capacity and excellent cyclic stability (96% retention after 250 cycles compared to other samples. This enhancement in electrochemical performance is consistent with the results of our electrochemical impedance spectroscopy measurements showing decreased charge-transfer resistance and high exchange current density.

Theory of novel normal and superconducting states in doped oxide high-Tc superconductors

International Nuclear Information System (INIS)

Dzhumanov, S.

2001-10-01

A consistent and complete theory of the novel normal and superconducting (SC) states of doped high-T c superconductors (HTSC) is developed by combining the continuum model of carrier self-trapping, the tight-binding model and the novel Fermi-Bose-liquid (FBL) model. The ground-state energy of carriers in lightly doped HTSC is calculated within the continuum model and adiabatic approximation using the variational method. The destruction of the long-range antiferromagnetic (AF) order at low doping x≥ x cl ≅0.015, the formation of the in-gap states or bands and novel (bi)polaronic insulating phases at x c2 ≅0.06-0.08, and the new metal- insulator transition at x≅x c2 in HTSC are studied within the continuum model of impurity (defect) centers and large (bi)polarons by using the appropriate tight-binding approximations. It is found that the three-dimensional (3d) large (bi)polarons are formed at ε ∞ /ε 0 ≤0.1 and become itinerant when the (bi)polaronic insulator-to-(bi)polaronic metal transitions occur at x x c2 . We show that the novel pseudogapped metallic and SC states in HTSC are formed at x c2 ≤x≤x p ≅0.20-0.24. We demonstrate that the large polaronic and small BCS-like pairing pseudogaps opening in the excitation spectrum of underdoped (x c2 BCS =0.125), optimally doped (x BCS o ≅0.20) and overdoped (x>x o ) HTSC above T c are unrelated to superconductivity and they are responsible for the observed anomalous optical, transport, magnetic and other properties of these HTSC. We develop the original two-stage FBL model of novel superconductivity describing the combined novel BCS-like pairing scenario of fermions and true superfluid (SF) condensation scenario of composite bosons (i.e. bipolarons and cooperons) in any Fermi-systems, where the SF condensate gap Δ B and the BCS-like pairing pseudogap Δ F have different origins. The pair and single particle condensations of attracting 3d and two- dimensional (2d) composite bosons are responsible for

High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

2015-01-19

REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

High-throughput combinatorial chemical bath deposition: The case of doping Cu (In, Ga) Se film with antimony

Science.gov (United States)

Yan, Zongkai; Zhang, Xiaokun; Li, Guang; Cui, Yuxing; Jiang, Zhaolian; Liu, Wen; Peng, Zhi; Xiang, Yong

2018-01-01

The conventional methods for designing and preparing thin film based on wet process remain a challenge due to disadvantages such as time-consuming and ineffective, which hinders the development of novel materials. Herein, we present a high-throughput combinatorial technique for continuous thin film preparation relied on chemical bath deposition (CBD). The method is ideally used to prepare high-throughput combinatorial material library with low decomposition temperatures and high water- or oxygen-sensitivity at relatively high-temperature. To check this system, a Cu(In, Ga)Se (CIGS) thin films library doped with 0-19.04 at.% of antimony (Sb) was taken as an example to evaluate the regulation of varying Sb doping concentration on the grain growth, structure, morphology and electrical properties of CIGS thin film systemically. Combined with the Energy Dispersive Spectrometer (EDS), X-ray Photoelectron Spectroscopy (XPS), automated X-ray Diffraction (XRD) for rapid screening and Localized Electrochemical Impedance Spectroscopy (LEIS), it was confirmed that this combinatorial high-throughput system could be used to identify the composition with the optimal grain orientation growth, microstructure and electrical properties systematically, through accurately monitoring the doping content and material composition. According to the characterization results, a Sb2Se3 quasi-liquid phase promoted CIGS film-growth model has been put forward. In addition to CIGS thin film reported here, the combinatorial CBD also could be applied to the high-throughput screening of other sulfide thin film material systems.

Morphology-controlled synthesis and novel microwave electromagnetic properties of hollow urchin-like chain Fe-doped MnO2 under 10 T high magnetic field

International Nuclear Information System (INIS)

Yuping, Duan; Jia, Zhang; Hui, Jing; Shunhua, Liu

2011-01-01

Fe-doped MnO 2 with a hollow sea urchin-like ball chain shape was first synthesized under a high magnetic field of 10 T. The formation mechanism was investigated and discussed in detail. The synthesized samples were characterized by XRD, SEM, TEM, EMPA, and vector network analysis. By doping MnO 2 with Fe, the relative complex permittivity of MnO 2 and its corresponding loss tangent clearly decreases, but its relative complex permeability and its corresponding loss tangent markedly increases. Moreover, the theoretically calculated values of reflection loss show that with increasing the Fe content, the as-prepared Fe-doped MnO 2 exhibits good microwave absorption capability. -- Graphical Abstract: Fe-doped MnO 2 with a hollow sea urchin-like ball chain shape was first synthesized in a high magnetic field of 10 T via a simple chemical process. Display Omitted Highlights: → Fe-doped MnO 2 with a hollow sea urchin-like ball chain shape was first synthesized. → We investigated formation mechanism and electromagnetic properties of the Fe-doped MnO 2 . → By doping MnO 2 with Fe, the electromagnetic properties are improved obviously.

Thickness and Nb-doping effects on ferro- and piezoelectric properties of highly a-axis-oriented Nb-doped Pb(Zr0.3Ti0.7)O3 films

Science.gov (United States)

Zhu, Zhi-Xiang; Ruangchalermwong, C.; Li, Jing-Feng

2008-09-01

Tetragonal Nb-doped Pb(Zr0.3Ti0.7)O3 (PNZT) films with a lead oxide seeding layer were deposited on the Pt(111)/Ti/SiO2/Si(100) substrates by sol-gel processing. The as-grown PNZT films with thicknesses ranging from about 0.08 to 0.78 μm show highly a-axis preferential orientation, and their ferroelectric and piezoelectric properties improved with increasing film thickness. Due to the combined effects of Nb doping and a-axis texturing as well as reduced substrate constraint, a high d33 constant up to 196 pm/V was obtained for PNZT film at 0.78 μm in addition to a large remnant polarization of 69 μC/cm2. This well a-axis-oriented PNZT films on platinized Si with a high piezoresponse are suitable for the fabrication of microelectromechanical devices.

Highly photosensitive polymethyl methacrylate microstructured polymer optical fiber with doped core

DEFF Research Database (Denmark)

Sáez-Rodríguez, D.; Nielsen, Kristian; Rasmussen, Henrik K.

2013-01-01

, providing a grating with a strong transmission rejection of −23  dB with an inscription time of only 13 min. The fabrication method has a big advantage compared to doping step index fiber since it enables doping of the fiber without using extra dopants to compensate for the index reduction in the core...

Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes.

Science.gov (United States)

Tali, S A Safiabadi; Soleimani-Amiri, S; Sanaee, Z; Mohajerzadeh, S

2017-02-10

We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C 2 H 2 and N 2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm 2 (45 F/cm 3 ) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 10 3  Wh/m 3 (8.3 × 10 6  J/m 3 ) and ultra-high power density of 2.6 × 10 8  W/m 3 which is among the highest reported values.

Nitrogen-doped ordered mesoporous carbon with a high surface area, synthesized through organic-inorganic coassembly, and its application in supercapacitors.

Science.gov (United States)

Song, Yanfang; Li, Li; Wang, Yonggang; Wang, Congxiao; Guo, Zaipin; Xia, Yongyao

2014-07-21

A new nitrogen-doped ordered mesoporous carbon (N-doped OMC) is synthesized by using an organic-inorganic coassembly method, in which resol is used as the carbon precursor, dicyandiamide as the nitrogen precursor, silicate oligomers as the inorganic precursors, and F127 as the soft template. The N-doped OMC possesses a surface area as high as 1374 m(2)  g(-1) and a large pore size of 7.4 nm. As an electrode material for supercapacitors, the obtained carbon exhibits excellent cycling stability and delivers a reversible specific capacitance as high as 308 F g(-1) in 1 mol L(-1) H(2)SO(4) aqueous electrolyte, of which 58 % of the capacity is due to pseudo-capacitance. The large specific capacitance is attributed to proper pore size distributions, large surface area, and high nitrogen content. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal diffusion boron doping of single-crystal natural diamond

Energy Technology Data Exchange (ETDEWEB)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-05-28

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Thermal diffusion boron doping of single-crystal natural diamond

International Nuclear Information System (INIS)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

2016-01-01

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Cysteine detection using a high-fluorescence sensor based on a nitrogen-doped graphene quantum dot–mercury(II) system

Energy Technology Data Exchange (ETDEWEB)

Liu, Zhenzhen; Gong, Yan; Fan, Zhefeng, E-mail: zhefengfan@126.com

2016-07-15

A novel and highly sensitive fluorescence sensor, which was based on the recovered fluorescence of a nitrogen-doped graphene quantum dot–Hg(II) system, was developed for cysteine detection. An easy, green, one-pot synthesis of nitrogen-doped graphene quantum dots was established by using citric acid and urea as carbon and nitrogen sources, respectively. The fluorescence of nitrogen-doped graphene quantum dots was significantly quenched by Hg(II) because of the efficient electron transfer between nitrogen-doped graphene quantum dots and Hg(II). Subsequently, fluorescence was recovered gradually upon cysteine addition to form a stable complex with Hg(II). The fluorescence sensor showed a response to cysteine within a wide concentration range of 0.05–30 μmol L{sup −1}, with a detection limit of 1.3 nmol L{sup −1}. The sensor was successfully applied to detect cysteine in honey and beer samples, with a recovery range of 98–105%.

Cysteine detection using a high-fluorescence sensor based on a nitrogen-doped graphene quantum dot–mercury(II) system

International Nuclear Information System (INIS)

Liu, Zhenzhen; Gong, Yan; Fan, Zhefeng

2016-01-01

A novel and highly sensitive fluorescence sensor, which was based on the recovered fluorescence of a nitrogen-doped graphene quantum dot–Hg(II) system, was developed for cysteine detection. An easy, green, one-pot synthesis of nitrogen-doped graphene quantum dots was established by using citric acid and urea as carbon and nitrogen sources, respectively. The fluorescence of nitrogen-doped graphene quantum dots was significantly quenched by Hg(II) because of the efficient electron transfer between nitrogen-doped graphene quantum dots and Hg(II). Subsequently, fluorescence was recovered gradually upon cysteine addition to form a stable complex with Hg(II). The fluorescence sensor showed a response to cysteine within a wide concentration range of 0.05–30 μmol L −1 , with a detection limit of 1.3 nmol L −1 . The sensor was successfully applied to detect cysteine in honey and beer samples, with a recovery range of 98–105%.

Radiation effects testing at the 88-Inch Cyclotron at LBNL

International Nuclear Information System (INIS)

McMahan, Margaret A.; Koga, Rokotura

2002-01-01

The effects of ionizing particles on sensitive microelectronics is an important component of the design of systems as diverse as satellites and space probes, detectors for high energy physics experiments and even internet server farms. Understanding the effects of radiation on human cells is an equally important endeavor directed towards future manned missions in space and towards cancer therapy. At the 88-Inch Cyclotron at the Berkeley Laboratory, facilities are available for radiation effects testing (RET) with heavy ions and with protons. The techniques for doing these measurements and the advantages of using a cyclotron will be discussed, and the Cyclotron facilities will be compared with other facilities worldwide. RET of the same part at several facilities of varying beam energy can provide tests of the simple models used in this field and elucidate the relative importance of atomic and nuclear effects. The results and implications of such measurements will be discussed

Diffusion of ion-implanted B in high concentration P- and As-doped silicon

International Nuclear Information System (INIS)

Fair, R.B.; Pappas, P.N.

1975-01-01

The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As was studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffusion is observed in both As- and P-doped Si, consistent with the effect of the local Fermi-level position in the Si band gap on B diffusivity, D/sub B/. It is shown that D/sub B/ is linearly dependent on the free hole concentration, p, over the range 0.1 less than p/n/sub ie/ less than 30, where n/sub ie/ is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxide source), nor the type of dopant used (P or As). (U.S.)

Simplifying and expanding analytical capabilities for various classes of doping agents by means of direct urine injection high performance liquid chromatography high resolution/high accuracy mass spectrometry.

Science.gov (United States)

Görgens, Christian; Guddat, Sven; Thomas, Andreas; Wachsmuth, Philipp; Orlovius, Anne-Katrin; Sigmund, Gerd; Thevis, Mario; Schänzer, Wilhelm

2016-11-30

So far, in sports drug testing compounds of different classes are processed and measured using different screening procedures. The constantly increasing number of samples in doping analysis, as well as the large number of substances with doping related, pharmacological effects require the development of even more powerful assays than those already employed in sports drug testing, indispensably with reduced sample preparation procedures. The analysis of native urine samples after direct injection provides a promising analytical approach, which thereby possesses a broad applicability to many different compounds and their metabolites, without a time-consuming sample preparation. In this study, a novel multi-target approach based on liquid chromatography and high resolution/high accuracy mass spectrometry is presented to screen for more than 200 analytes of various classes of doping agents far below the required detection limits in sports drug testing. Here, classic groups of drugs as diuretics, stimulants, β 2 -agonists, narcotics and anabolic androgenic steroids as well as various newer target compounds like hypoxia-inducible factor (HIF) stabilizers, selective androgen receptor modulators (SARMs), selective estrogen receptor modulators (SERMs), plasma volume expanders and other doping related compounds, listed in the 2016 WADA prohibited list were implemented. As a main achievement, growth hormone releasing peptides could be implemented, which chemically belong to the group of small peptides (0.99), limit of detection (0.1-25ng/mL; 3'OH-stanozolol glucuronide: 50pg/mL; dextran/HES: 10μg/mL) and matrix effects. Copyright © 2016 Elsevier B.V. All rights reserved.

Optical properties of highly Er{sup 3+}-doped sodium-aluminium-phosphate glasses for broadband 1.5 {mu}m emission

Energy Technology Data Exchange (ETDEWEB)

Reddy, A. Amarnath [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Babu, S. Surendra [Laser Instrumentation Design Centre, Instrument Research and Development Establishment, Dehradun 248008 (India); Pradeesh, K. [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Otton, C.J. [Valencia Nanophotonics Technology Center, Universidad Politecnica de Valencia, 46022 Valencia (Spain); Vijaya Prakash, G., E-mail: prakash@physics.iitd.ac.in [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India)

2011-03-03

Research highlights: > Highly Er{sup 3+} doped phosphate glasses for the 1.54 {mu}m laser emission were explored. > Emission from these doped glasses shows larger lifetimes and quantum efficiencies. > Optical amplifier parameters are greater than other reported phosphate glasses. > The durability and obtained results are most favourable for short-length amplifiers. - Abstract: Erbium-doped Na{sub 3}Al{sub 2}P{sub 3}O{sub 12} (NAP) glasses with compositions 92NAP-(8-x)Al{sub 2}O{sub 3}-(x)Er{sub 2}O{sub 3} (where x = 2-8) were prepared and characterized for absorption, visible and NIR emission and decay time properties. Judd-Ofelt analysis has been carried out to predict radiative properties of luminescent levels of Er{sup 3+} ions. Comparatively larger photoluminescence lifetimes (7.86 ms) and larger quantum efficiencies (74%) for the laser transition, {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} (at 1.54 {mu}m) are observed. The moisture insensitivity, large Er{sup 3+} ion doping capability and relatively high-gain and broad emission at 1.5 {mu}m are the most notable features of these glasses to realize efficient short-length optical amplifiers.

Doping dependence of charge order in electron-doped cuprate superconductors

Science.gov (United States)

Mou, Yingping; Feng, Shiping

2017-12-01

In the recent studies of the unconventional physics in cuprate superconductors, one of the central issues is the interplay between charge order and superconductivity. Here the mechanism of the charge-order formation in the electron-doped cuprate superconductors is investigated based on the t-J model. The experimentally observed momentum dependence of the electron quasiparticle scattering rate is qualitatively reproduced, where the scattering rate is highly anisotropic in momentum space, and is intriguingly related to the charge-order gap. Although the scattering strength appears to be weakest at the hot spots, the scattering in the antinodal region is stronger than that in the nodal region, which leads to the original electron Fermi surface is broken up into the Fermi pockets and their coexistence with the Fermi arcs located around the nodal region. In particular, this electron Fermi surface instability drives the charge-order correlation, with the charge-order wave vector that matches well with the wave vector connecting the hot spots, as the charge-order correlation in the hole-doped counterparts. However, in a striking contrast to the hole-doped case, the charge-order wave vector in the electron-doped side increases in magnitude with the electron doping. The theory also shows the existence of a quantitative link between the single-electron fermiology and the collective response of the electron density.

Conductive Boron-Doped Graphene as an Ideal Material for Electrocatalytically Switchable and High-Capacity Hydrogen Storage.

Science.gov (United States)

Tan, Xin; Tahini, Hassan A; Smith, Sean C

2016-12-07

Electrocatalytic, switchable hydrogen storage promises both tunable kinetics and facile reversibility without the need for specific catalysts. The feasibility of this approach relies on having materials that are easy to synthesize, possessing good electrical conductivities. Graphitic carbon nitride (g-C 4 N 3 ) has been predicted to display charge-responsive binding with molecular hydrogen-the only such conductive sorbent material that has been discovered to date. As yet, however, this conductive variant of graphitic carbon nitride is not readily synthesized by scalable methods. Here, we examine the possibility of conductive and easily synthesized boron-doped graphene nanosheets (B-doped graphene) as sorbent materials for practical applications of electrocatalytically switchable hydrogen storage. Using first-principle calculations, we find that the adsorption energy of H 2 molecules on B-doped graphene can be dramatically enhanced by removing electrons from and thereby positively charging the adsorbent. Thus, by controlling charge injected or depleted from the adsorbent, one can effectively tune the storage/release processes which occur spontaneously without any energy barriers. At full hydrogen coverage, the positively charged BC 5 achieves high storage capacities up to 5.3 wt %. Importantly, B-doped graphene, such as BC 49 , BC 7 , and BC 5 , have good electrical conductivity and can be easily synthesized by scalable methods, which positions this class of material as a very good candidate for charge injection/release. These predictions pave the route for practical implementation of electrocatalytic systems with switchable storage/release capacities that offer high capacity for hydrogen storage.

High pulse energy sub-nanosecond Tm-doped fiber laser

Science.gov (United States)

Cserteg, Andras; Guillemet, Sebastien; Hernandez, Yves; Giannone, Domenico

2012-02-01

We report a core pumped thulium-doped fiber amplifier that generates 1.4 μJ pulses at 1980 nm with a repetition rate of 3.6 MHz preserving the original spectral bandwidth of the oscillator. The amplifier chain is seeded by a passively modelocked fiber laser with 5 mW output power and the pulses are stretched to 800 picoseconds. The amplifier is core pumped by a single mode erbium fiber laser. The slope efficiency is 35%. To the best of our knowledge, this is the first demonstration of sub nanosecond pulses with energies higher than 1 μJ coming out of a thulium-doped fiber amplifier.

Fabrication and photovoltaic performance of niobium doped TiO{sub 2} hierarchical microspheres with exposed {001} facets and high specific surface area

Energy Technology Data Exchange (ETDEWEB)

Liu, Yongqiang; Ran, Huili [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou 450001 (China); Fan, Jiajie, E-mail: fanjiajie@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou 450001 (China); Zhang, Xiaoli; Mao, Jing [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou 450001 (China); Shao, Guosheng [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou 450001 (China); Institute for Renewable Energy and Environmental Technologies, University of Bolton, Bolton BL3 5AB (United Kingdom)

2017-07-15

Highlights: • Nb-doped hierarchical TiO{sub 2} microsphere DSSCs show enhanced performance. • Nb{sup 5+} dopant replaces Ti{sup 4+} cation in TiO{sub 2} lattice. • Electrons transport was enhanced due to the down-shifted conduction band minimum. • Exposed (001) facets and high specific surface area allows high dye-loading. - Abstract: The niobium doped hierarchical anatase TiO{sub 2} microspheres, which are consist of a serried nano-thorns and plicate nano-ribbons with exposed {001} facets, were synthesized using hydrothermal method followed by heat treatment. The effects of niobium on the microstructures and photovoltaic performances of the dye-sensitized solar cells (DSSCs) were studied. The results revealed that Nb{sup 5+} doping replaces Ti{sup 4+} cations in TiO{sub 2} lattice, and the bandgap of the films varies with increasing Nb doping concentration because of the downshift of the conduction band minimum (CBM). The niobium-doped TiO{sub 2} DSSCs with moderate loadings show enhanced performance comparing with their pure TiO{sub 2} counterparts. Optimally, the conversion efficiency of the Nb-3.5 (Nb 3.5 mol%) DSSC is 4.99%. This is higher than that (4.39%) of pure TiO{sub 2} cells by 13.7%. This is due to the fact that the Nb-doped solar cells have increased the number of the photo-induced electrons because of their exposed (001) facets and higher specific surface area; and enhanced electrons collection and transport because of the downshifted CBM of the Nb-doped TiO{sub 2}. However, heavy Nb doping results in the decrease of the performance of the niobium-doped cells due to the excessive defects within the Nb-TiO{sub 2} samples resulting in enhanced charge recombination at defects.

Monitoring of the Irradiated Neutron Fluence in the Neutron Transmutation Doping Process of Hanaro

Science.gov (United States)

Kim, Myong-Seop; Park, Sang-Jun

2009-08-01

Neutron transmutation doping (NTD) for silicon is a process of the creation of phosphorus impurities in intrinsic or extrinsic silicon by neutron irradiation to obtain silicon semiconductors with extremely uniform dopant distribution. HANARO has two vertical holes for the NTD, and the irradiation for 5 and 6 inch silicon ingots has been going on at one hole. In order to achieve the accurate neutron fluence corresponding to the target resistivity, the real time neutron flux is monitored by self-powered neutron detectors. After irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of activation detectors. In this work, a neutron fluence monitoring method using zirconium foils with the mass of 10 ~ 50 mg was applied to the NTD process of HANARO. We determined the proportional constant of the relationship between the resistivity of the irradiated silicon and the neutron fluence determined by using zirconium foils. The determined constant for the initially n-type silicon was 3.126 × 1019 n·Ω/cm. It was confirmed that the difference between this empirical value and the theoretical one was only 0.5%. Conclusively, the practical methodology to perform the neutron transmutation doping of silicon was established.

Artist autonomy in a digital era: The case of Nine Inch Nails

Directory of Open Access Journals (Sweden)

Steven C. Brown

2012-09-01

Full Text Available A 2009 presentation by Michael Masnick (CEO and founder of insight company Floor64 entitled ‘How Trent Reznor and Nine Inch Nails represent the Future of the Music Business’ brought the success of the business models employed by Reznor in distributing Nine Inch Nails’ music into the spotlight. The present review provides a comprehensive timeline of the band circa 2005-2010, evaluating the success of the distribution methods employed in accordance with Masnick’s (2009 proposed business model of connecting with fans and providing them with a reason to buy. The model is conceptualised in the wider context in which Reznor’s distribution methods take place (including a brief consideration of Radiohead’s much cited pay-what-you- want model, addressing the perceived gaps in the model by exploring the involvement of musical preferences; age and consumer purchasing behavior and fan worship. Implications are discussed concerning the applicability of the model for new and emerging bands.

Nitrogen and phosphorus co-doped carbon hollow spheres derived from polypyrrole for high-performance supercapacitor electrodes

Science.gov (United States)

Lv, Bingjie; Li, Peipei; Liu, Yan; Lin, Shanshan; Gao, Bifen; Lin, Bizhou

2018-04-01

Nitrogen and phosphorus co-doped carbon hollow spheres (NPCHSs) have been prepared by a carbonization and subsequent chemical activation route using dehydrated polypyrrole hollow spheres as the precursor and KOH as the activating agent. NPCHSs are interconnected into a unique 3D porous network, which endows the as-prepared carbon to exhibit a large specific surface area of 1155 m2 g-1 and a high specific capacitance of 232 F g-1 at a current density of 1 A g-1. The as-obtained NPCHSs present a high-level heteroatom doping with N, O and P contents of 11.4, 6.7 and 3.5 wt%, respectively. The capacitance of NPCHSs has been retained at 89.1% after 5000 charge-discharge cycles at a relatively high current density of 5 A g-1. Such excellent performance suggests that NPCHSs are attractive electrode candidates for electrical double layer capacitors.

Structure and bulk modulus of Ln-doped UO{sub 2} (Ln = La, Nd) at high pressure

Energy Technology Data Exchange (ETDEWEB)

Rittman, Dylan R., E-mail: drittman@stanford.edu [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Park, Sulgiye; Tracy, Cameron L. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Zhang, Lei [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California Davis, Davis, CA 95616 (United States); Department of Chemical Engineering and Materials Science, University of California Davis, Davis, CA 95616 (United States); Palomares, Raul I.; Lang, Maik [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Navrotsky, Alexandra [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California Davis, Davis, CA 95616 (United States); Department of Chemical Engineering and Materials Science, University of California Davis, Davis, CA 95616 (United States); Mao, Wendy L. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Ewing, Rodney C. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States)

2017-07-15

The structure of lanthanide-doped uranium dioxide, Ln{sub x}U{sub 1-x}O{sub 2-0.5x+y} (Ln = La, Nd), was investigated at pressures up to ∼50–55 GPa. Samples were synthesized with different lanthanides at different concentrations (x ∼ 0.2 and 0.5), and all were slightly hyperstoichiometric (y ∼ 0.25–0.4). In situ high-pressure synchrotron X-ray diffraction was used to investigate their high-pressure phase behavior and determine their bulk moduli. All samples underwent a fluorite-to-cotunnite phase transformation with increasing pressure. The pressure of the phase transformation increased with increasing hyperstoichiometry, which is consistent with results from previous computational simulations. Bulk moduli are inversely proportional to both the ionic radius of the lanthanide and its concentration, as quantified using a weighted cationic radius ratio. This trend was found to be consistent with the behavior of other elastic properties measured for Ln-doped UO{sub 2}, such as Young's modulus. - Highlights: •Ln-doped UO{sub 2} transforms from fluorite to cotunnite at high pressure. •Transition pressure increases with increasing hyperstoichiometry. •Bulk modulus decreases with increasing Ln-dopant radius and concentration.

Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

Science.gov (United States)

Li, Stephen X.; Merritt, Scott; Krainak, Michael A.; Yu, Anthony

2018-01-01

High gain Erbium Doped Fiber Amplifiers (EDFAs) are vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random, spontaneous Q-switched (SQS) pulses with high peak power, i.e. giant pulses. Giant pulses can damage either the components within a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on the evolution of normal pulses into giant pulses, and provide results on the transient effects of giant pulses on an amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

Neutron transmutation doped Ge bolometers

Science.gov (United States)

Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

1983-01-01

Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

Controlling Molecular Doping in Organic Semiconductors.

Science.gov (United States)

Jacobs, Ian E; Moulé, Adam J

2017-11-01

The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tungsten-doped ZnO nanocomposite: Synthesis, characterization, and highly active photocatalyst toward dye photodegradation

Energy Technology Data Exchange (ETDEWEB)

Moafi, Hadi Fallah, E-mail: Fallah.m@guilan.ac.ir [Department of Chemistry, Faculty of Science, University of Guilan, P.O. Box 1914, Rasht (Iran, Islamic Republic of); Zanjanchi, Mohammad Ali; Shojaie, Abdollah Fallah [Department of Chemistry, Faculty of Science, University of Guilan, P.O. Box 1914, Rasht (Iran, Islamic Republic of)

2013-05-15

A series of W-doped ZnO nanocomposite with different W contents were synthesized by sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), inductively coupled plasma (ICP) and BET surface area measurement. The XRD results revealed that all the W-doped samples showed a hexagonal wurtzite structure. The results of EDS and XPS revealed that W was doped into ZnO structure. The particle size of doped ZnO is much smaller as compared to that of pure ZnO. The photocatalytic activity of undoped ZnO and W-doped ZnO was evaluated by the photodegradation of methylene blue in aqueous solution. The results show that the photocatalytic activity of the W-doped ZnO is much higher than that of undoped ZnO and the optimum percentage of doped W is 4 mol%. The enhanced photocatalytic activity of the W-ZnO samples may be related to the narrowing of the band gap, increase in the charge separation efficiency, particle size reduction and increase of the surface area. Highlights: ► W-doped ZnO nanocomposites were synthesized by a sol–gel method. ► The XRD results revealed that all the materials consisting of wurtzite structure. ► The sizes of the W-ZnO nanocomposite are 5–10 nm, obtained from TEM image. ► With W doping into ZnO photoinduced charge separation rate has been enhanced. ► Photocatalytic activity of the W-ZnO is much higher than that of undoped ZnO.

Tungsten-doped ZnO nanocomposite: Synthesis, characterization, and highly active photocatalyst toward dye photodegradation

International Nuclear Information System (INIS)

Moafi, Hadi Fallah; Zanjanchi, Mohammad Ali; Shojaie, Abdollah Fallah

2013-01-01

A series of W-doped ZnO nanocomposite with different W contents were synthesized by sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), inductively coupled plasma (ICP) and BET surface area measurement. The XRD results revealed that all the W-doped samples showed a hexagonal wurtzite structure. The results of EDS and XPS revealed that W was doped into ZnO structure. The particle size of doped ZnO is much smaller as compared to that of pure ZnO. The photocatalytic activity of undoped ZnO and W-doped ZnO was evaluated by the photodegradation of methylene blue in aqueous solution. The results show that the photocatalytic activity of the W-doped ZnO is much higher than that of undoped ZnO and the optimum percentage of doped W is 4 mol%. The enhanced photocatalytic activity of the W-ZnO samples may be related to the narrowing of the band gap, increase in the charge separation efficiency, particle size reduction and increase of the surface area. Highlights: ► W-doped ZnO nanocomposites were synthesized by a sol–gel method. ► The XRD results revealed that all the materials consisting of wurtzite structure. ► The sizes of the W-ZnO nanocomposite are 5–10 nm, obtained from TEM image. ► With W doping into ZnO photoinduced charge separation rate has been enhanced. ► Photocatalytic activity of the W-ZnO is much higher than that of undoped ZnO

Analysis of YBCO high temperature superconductor doped with silver nanoparticles and carbon nanotubes using Williamson-Hall and size-strain plot

Science.gov (United States)

Dadras, Sedigheh; Davoudiniya, Masoumeh

2018-05-01

This paper sets out to investigate and compare the effects of Ag nanoparticles and carbon nanotubes (CNTs) doping on the mechanical properties of Y1Ba2Cu3O7-δ (YBCO) high temperature superconductor. For this purpose, the pure and doped YBCO samples were synthesized by sol-gel method. The microstructural analysis of the samples is performed using X-ray diffraction (XRD). The crystalline size, lattice strain and stress of the pure and doped YBCO samples were estimated by modified forms of Williamson-Hall analysis (W-H), namely, uniform deformation model (UDM), uniform deformation stress model (UDSM) and the size-strain plot method (SSP). These results show that the crystalline size, lattice strain and stress of the YBCO samples declined by Ag nanoparticles and CNTs doping.

High Methanol Oxidation Activity of Well-Dispersed Pt Nanoparticles on Carbon Nanotubes Using Nitrogen Doping

Directory of Open Access Journals (Sweden)

Fang Wei-Chuan

2009-01-01

Full Text Available Abstract Pt nanoparticles (NPs with the average size of 3.14 nm well dispersed on N-doped carbon nanotubes (CNTs without any pretreatment have been demonstrated. Structural properties show the characteristic N bonding within CNTs, which provide the good support for uniform distribution of Pt NPs. In electrochemical characteristics, N-doped CNTs covered with Pt NPs show superior current density due to the fact that the so-called N incorporation could give rise to the formation of preferential sites within CNTs accompanied by the low interfacial energy for immobilizing Pt NPs. Therefore, the substantially enhanced methanol oxidation activity performed by N-incorporation technique is highly promising in energy-generation applications.

High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

International Nuclear Information System (INIS)

Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

2015-01-01

REBa 2 Cu 3 O x ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J c ) above 20 MA/cm 2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba 2 Cu 3 O x superconductor tapes, which is more than three times higher than the J c typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m 3 have also been attained at 20 K. A composition map of lift factor in J c (ratio of J c at 30 K, 3 T to the J c at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO 3 (BZO) nanocolumn defect density of nearly 7 × 10 11  cm −2 as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J c films

Three-dimensional nitrogen and boron co-doped graphene for high-performance all-solid-state supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhong-Shuai; Chen, Long; Sun, Yi; Muellen, Klaus [Max-Planck-Institut fuer Polymerforschung, Ackermannweg 10, 55128 Mainz (Germany); Winter, Andreas; Turchanin, Andrey [Universitaet Bielefeld, Fakultaet fuer Physik, Physik Supramolekularer Systeme und Oberflaechen, Universitaetsstr. 25D, 33615 Bielefeld (Germany); Feng, Xinliang [Max-Planck-Institut fuer Polymerforschung, Ackermannweg 10, 55128 Mainz (Germany); School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, 200240, Shanghai (China)

2012-09-25

A simplified prototype device of high-performance all-solid-state supercapacitors (ASSSs) based on 3D nitrogen and boron co-doped monolithic graphene aerogels (BN-GAs) is demonstrated for the first time. The resulting ASSSs show high specific capacitance, good rate capability, and enhanced energy density or power density. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

[Doping and urologic tumors].

Science.gov (United States)

Pinto, F; Sacco, E; Volpe, A; Gardi, M; Totaro, A; Calarco, A; Racioppi, M; Gulino, G; D'Addessi, A; Bassi, P F

2010-01-01

Several substances such as growth hormone (GH), erythropoietin (Epo), and anabolic steroids (AS) are improperly utilized to increase the performance of athletes. Evaluating the potential cancer risk associated with doping agents is difficult since these drugs are often used at very high doses and in combination with other licit or illicit drugs. The GH, via its mediator, the insulin-like growth factor 1 (IGF-1), is involved in the development and progression of cancer. Animal studies suggested that high levels of GH/IGF-1 increase progression of androgen-independent prostate cancer. Clinical data regarding prostate cancer are mostly based on epidemiological studies or indirect data such as IGF-1 high levels in patients with prostate cancer. Even if experimental studies showed a correlation between Epo and cancer, no clinical data are currently available on cancer development related to Epo as a doping agent. Androgens are involved in prostate carcinogenesis modulating genes that regulate cell proliferation, apoptosis and angiogenesis. Most information on AS is anecdotal (case reports on prostate, kidney and testicular cancers). Prospective epidemiologic studies failed to support the hypothesis that circulating androgens are positively associated with prostate cancer risk. Currently, clinical and epidemiological studies supporting association between doping and urological neoplasias are not available. Nowadays, exposure to doping agents starts more prematurely with a consequent longer exposition period; drugs are often used at very high doses and in combination with other licit or illicit drugs. Due to all these elements it is impossible to predict all the side effects, including cancer; more detailed studies are therefore necessary.

[Doping, sport and addiction--any links?].

Science.gov (United States)

Foucart, J; Verbanck, P; Lebrun, P

2015-01-01

Sport is widely encouraged as it is beneficial for health. However, high-performance sport is more and more associated to rather suspicious practices; doping is one of the best example. From a physician point of view, the use of doping agents is obviously a major concern because taking such products often induce serious adverse effects on health. The present manuscript aims to inform physicians about the most frequent doping practices. It also points out that intensive sport can generate an "addictive" behavior sharing with "common"addictions a loss of practice control, a lack of interest in other activities and even a sport's practice detrimental to athlete's health. Analysis of the doping issue needs to take this reality into account as some doping products display an established " addictive" effect.

Structure prediction of boron-doped graphene by machine learning

Science.gov (United States)

M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

2018-06-01

Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

High selectivity and stability of Mg-doped Al-MCM-41 for in-situ catalytic upgrading fast pyrolysis bio-oil

International Nuclear Information System (INIS)

Karnjanakom, Surachai; Suriya-umporn, Thanyamai; Bayu, Asep; Kongparakul, Suwadee; Samart, Chanatip; Fushimi, Chihiro; Abudula, Abuliti; Guan, Guoqing

2017-01-01

Highlights: • Mg-doped Al-MCM-41 was developed for in-situ catalytic upgrading of bio-oils. • Mg/Al-MCM-41 exhibited high selectivity to aromatic hydrocarbons. • The ratio of produced hydrocarbon reached up to 80% in upgraded bio-oil. • 1 wt.% Mg/Al-MCM-41 showed the highest catalytic activity. • Mg/Al-MCM-41 had stable reusability due to its coking inhabitation ability. - Abstract: In-situ catalytic upgrading of bio-oils derived from the fast pyrolysis of cellulose, lignin or sunflower stalk over Mg-doped Al-MCM-41 was investigated in details. It is found that Mg species with doping amounts ranged between 0.25 and 10 wt.% was well dispersed on Al-MCM-41, and that doping Mg on Al-MCM-41 effectively adjusted the acidity and basicity of the catalysts, resulting in significant improvement of bio-oil quality. Mg/Al-MCM-41 exhibited high selective conversion of bio-oils derived from cellulose, lignin or sunflower stalk to high value-added aromatic hydrocarbons via catalytic cracking, deoxygenation and aromatization. In the upgraded bio-oil, the relative total hydrocarbon amount reached up to approximately ≥80%, which consisted of aromatic hydrocarbon approximately 76% and aliphatic hydrocarbon approximately 4% for all feedstocks. The selectivity to the monocyclic aromatic hydrocarbons (MAHs) such as benzene, toluene and xylenes (BTXs) increased while the coke formed on the catalyst decreased with the increase in Mg doping amount. 1 wt.% Mg/Al-MCM-41 resulted in the highest relative total hydrocarbon amount in the upgraded bio-oil at lower catalytic deoxygenation temperature, and showed stable reusability for at least 5 cycles. It is expected that Mg/Al-MCM-41 can be widely applied for bio-oil upgrading in a practical process.

Three-Dimensional Nitrogen-Doped Hierarchical Porous Carbon as an Electrode for High-Performance Supercapacitors.

Science.gov (United States)

Tang, Jing; Wang, Tao; Salunkhe, Rahul R; Alshehri, Saad M; Malgras, Victor; Yamauchi, Yusuke

2015-11-23

A facile and sustainable procedure for the synthesis of nitrogen-doped hierarchical porous carbons with a three-dimensional interconnected framework (NHPC-3D) was developed. The strategy, based on a colloidal crystal-templating method, utilizes nitrogenous dopamine as the precursor due to its unique properties, including self-polymerization under mild alkaline conditions, coating onto various surfaces, a high carbonization yield, and well-preserved nitrogen doping after heat treatment. The obtained NHPC-3D possesses a high surface area of 1056 m(2)  g(-1) , a large pore volume of 2.56 cm(3)  g(-1) , and a high nitrogen content of 8.2 wt %. The NHPC-3D is implemented as the electrode material of a supercapacitor and exhibits a specific capacitance as high as 252 F g(-1) at a current density of 2 A g(-1) . The device also shows a high capacitance retention of 75.7 % at a higher current density of 20 A g(-1) in aqueous electrolyte due to a sufficient surface area for charge accommodation, reversible pseudocapacitance, and minimized ion-transport resistance, as a result of the advantageous interconnected hierarchical porous texture. These results showcase NHPC-3D as a promising candidate for electrode materials in supercapacitors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tetra-heteroatom self-doped carbon nanosheets derived from silkworm excrement for high-performance supercapacitors

Science.gov (United States)

Lei, Shuijin; Chen, Lianfu; Zhou, Wei; Deng, Peiqin; Liu, Yan; Fei, Linfeng; Lu, Wei; Xiao, Yanhe; Cheng, Baochang

2018-03-01

Carbon materials are deemed to be competitive candidate electrode materials for energy storage systems. It is still a great challenge to explore advanced carbon-based electrode materials for high-performance supercapacitors by a facile, economical and efficient method. In this work, N-, P-, S-, O-self-doped carbon nanosheets with high surface area and well-developed porosity are successfully prepared by pyrolysis carbonization and post KOH activation from silkworm excrement, a novel abundant, low-cost and eco-friendly agricultural waste. Thanks to their unique multi-heteroatom doping and porous structure, the obtained carbon materials exhibit high charge storage capacity with a specific capacitance of 401 F g-1 at a current density of 0.5 A g-1 in 6 M KOH and good cycling stability with a capacitance retention of 93.8% over 10000 cycles. A symmetric supercapacitor device using 1 M Na2SO4 aqueous solution as the electrolyte can deliver a specific capacitance of 41.7 F g-1 at a current density of 0.5 A g-1, and a high energy density of 23.17 Wh kg-1 at a power density of 500 W kg-1 with a wide voltage window of 2.0 V. This work develops a new strategy to produce favorable carbon-based electrode materials for supercapacitors with high electrochemical performances.

Electron energy-loss spectroscopy on n-type doped high-temperature superconductors and related systems

International Nuclear Information System (INIS)

Alexander, M.

1992-08-01

Electron-enery loss spectroscopy measurements on n-type doped high temperature superconductors, their undoped parent compounds, Y-doped Bi 2 Sr 2 CaCu 2 O 8 and some rare earth oxides are presented. The undoped parent compounds Ln 2 CuO 4 (Ln = Pr, Nd, Sm) are charge transfer insulators with a charge transfer energy gap of 1.4 eV. The conduction band lies in the CuO 2 plane and has mainly Cu3d x 2 -y 2 character. O2p x,y states are slightly hybridized with this band. Upon partially substituting the trivalent Ln ions by tetravalent Ce or Th and monovalent F for the O ions, electron doping of the CuO 2 plane occurs with the electrons having mainly Cu3d character. A rigid band behaviour is proposed by several band structure calculations could be ruled out, as well as the occurence of so called 'mid-gap' states appearing inside the band gap between the valence and conduction bands. The position of the Fermi level was found to be at the bottom of the conduction bands. No measurable influence of the reduction process, necessary to obtain superconductivity, was detected in the unoccupied density of states. Characteristics shifts of the measured oxygen and copper edges were correlated with crossing the metal-insulator transition. These shifts are most probably caused by an improved screening capacity of the free charge carriers. A similar effect was also observed in Y-doped Bi 2 Sr 2 CaCu 2 O 8 . Thus, it was possible to show that the disappearance of the valence band hole states upon doping did not occur in a rigid-band-like manner. The low energy excitations in Nd 1.85 Ce 0.15 CuO 4-δ showed a plasmon like excitation at about 1 eV as well as a reduction and an energy shift of the charge transfer excitation. The dispersion of this plasmon excitation was determined. (orig.)

Template-free synthesis of three-dimensional nanoporous N-doped graphene for high performance fuel cell oxygen reduction reaction in alkaline media

International Nuclear Information System (INIS)

Tang, Sheng; Zhou, Xuejun; Xu, Nengneng; Bai, Zhengyu; Qiao, Jinli; Zhang, Jiujun

2016-01-01

Highlights: • 3-D porous N-doped graphene was prepared using one-step silica template-free method. • High specific surface area of 920 m 2 g −1 was achieved for 3-D porous N-doped graphene. • Much higher ORR activity was observed for N-doped graphene than S-doped one in 0.1 M KOH. • The as-prepared catalyst gave a peak power density of 275 mW cm −2 as zinc–air battery cathode. - Abstract: Three-dimensional nanoporous nitrogen-doped graphene (3D-PNG) has been synthesized through a facial one-step synthesis method without additional silica template. The as-prepared 3D-PNGwas used as an electrocatalyst for the oxygen reduction reaction (ORR), which shows excellent electrochemistry performance, demonstrated by half-cell electrochemical evaluation in 0.1 M KOH including prominent ORR activity, four electron-selectivity and remarkable methanol poisoning stability compared to commercial 20%Pt/C catalyst. The physical and surface properties of 3D-PNG catalyst were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and BET surface area analysis. The experiments show that 3D-PNG catalyst possesses super-large specific surface area reaching 920 m 2 g −1 , which is superior to our most recently reported 3D-PNG synthesized by silica template (670 m 2 g −1 ) and other doped graphene catalysts in literature. When used for constructing a zinc–air battery cathode, such an 3D-PNG catalyst can give a discharge peak power density of 275 mW cm −2 . All the results announce a unique procedure to product high-efficiency graphene-based non-noble metal catalyst materials for electrochemical energy devices including both fuel cells and metal–air batteries.

Direct Synthesis of Co-doped Graphene on Dielectric Substrates Using Solid Carbon Sources

Institute of Scientific and Technical Information of China (English)

Qi Wang; Pingping Zhang; Qiqi Zhuo; Xiaoxin Lv; Jiwei Wang; Xuhui Sun

2015-01-01

Direct synthesis of high-quality doped graphene on dielectric substrates without transfer is highly desired for simplified device processing in electronic applications.However,graphene synthesis directly on substrates suitable for device applications,though highly demanded,remains unattainable and challenging.Here,a simple and transfer-free synthesis of high-quality doped graphene on the dielectric substrate has been developed using a thin Cu layer as the top catalyst and polycyclic aromatic hydrocarbons as both carbon precursors and doping sources.N-doped and N,F-co-doped graphene have been achieved using TPB and F16Cu Pc as solid carbon sources,respectively.The growth conditions were systematically optimized and the as-grown doped graphene were well characterized.The growth strategy provides a controllable transfer-free route for high-quality doped graphene synthesis,which will facilitate the practical applications of graphene.

Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

NARCIS (Netherlands)

Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

2018-01-01

A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was

Nitrogen and Fluorine co-doped carbon catalyst with high oxygen reduction performance, prepared by pyrolyzing a mixture of melamine and PTFE

International Nuclear Information System (INIS)

Peng, Hongliang; Liu, Fangfang; Qiao, Xiaochang; Xiong, Ziang; Li, Xiuhua; Shu, Ting; Liao, Shijun

2015-01-01

Graphical abstract: A novel N and F co-doped metal-free doped carbon catalyst with three dimensional vesicles structures and ultra thin walls are prepared by pyrolyzing the mixture of melamine and PTFE. The catalyst has high N and F contents (13 and 6 at.%), and exhibits high ORR activity, high stability, and high limitation current density in both alkaline and acid medium. - Highlights: • N and F co-doped carbon catalyst was derived from the mixture of PTFE and melamine. • The N and F contents of the catalyst are up to 13 and 6 at.%, respectively. • The catalyst has three dimensional vesicles structure with ultra thin walls. • ORR activity of the catalyst is superior to that of Pt/C catalyst in alkaline medium. - Abstract: A novel nitrogen and fluorine co-doped carbon catalyst (C-Mela-PTFE) is prepared by pyrolyzing a mixture of melamine and polytetrafluoroethylene (PTFE), the catalyst has a three-dimensional vesicular structure with ultrathin wall, and exhibits excellent ORR performance in both alkaline and acidic mediums. In an alkaline medium, the catalyst exhibits superior ORR activity to that of commercial Pt/C catalyst. Notably, the ORR activity of the catalyst is just slightly lower than that of Pt/C catalyst in acidic medium. It is interesting that the ORR limiting current density of our C-Mela-PTFE catalyst is much higher than that of Pt/C catalyst. The effects of the melamine/PTFE ratio and the pyrolysis temperature on the catalyst's ORR performance are investigated. The optimal melamine/PTFE ratio by weight is 1:1.5, and the optimal pyrolysis temperature is 950 °C. The catalyst samples are characterized by XRD, SEM/TEM, Raman analysis, and XPS, the results reveal the ultra-thin-walled vesicular structure, high surface area and porosity, and high doping amounts of N and F of the catalyst. For the optimal sample, the N and F contents are up to 13 and 6 at.%, respectively, the proportion of pyridinic N is up to 45 at.% according to the

Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

KAUST Repository

Noriega, Rodrigo; Rivnay, Jonathan; Goris, Ludwig; Kälblein, Daniel; Klauk, Hagen; Kern, Klaus; Thompson, Linda M.; Palke, Aaron C.; Stebbins, Jonathan F.; Jokisaari, Jacob R.; Kusinski, Greg; Salleo, Alberto

2010-01-01

The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.

Effect of Au nano-particles doping on polycrystalline YBCO high temperature superconductor

Energy Technology Data Exchange (ETDEWEB)

Dadras, Sedigheh, E-mail: dadras@alzahra.ac.ir; Gharehgazloo, Zahra

2016-07-01

In this research, we prepared different Au nanoparticles (0.1–2 wt%) doped YBCO high temperature superconductor samples by sol-gel method. To characterize the samples, we used X-Ray diffraction (XRD) and scanning electron microscope (SEM) analysis. Results show the formation of orthorhombic phase of superconductivity for all prepared samples. We observed that by adding Au nanoparticles, the grains' size of the samples reduces from 76 nm to 47 nm as well. The critical current density (J{sub c}) and transition temperature (T{sub c}) were determined using current versus voltage (I–V) and resistivity versus temperature (ρ-T) measurements, respectively. We found that by increasing Au nanoparticles in the compound, in comparison to the pure YBCO sample, the transition temperature, pinning energy and critical current density will increase. Also, the highest J{sub c} is for 1 wt% Au doped YBCO compound that its critical current density is about 8 times more than the J{sub c} of pure one in 0.7 T magnetic field.

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

International Nuclear Information System (INIS)

Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

2016-01-01

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Polymer-mediated synthesis of a nitrogen-doped carbon aerogel with highly dispersed Pt nanoparticles for enhanced electrocatalytic activity

International Nuclear Information System (INIS)

2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Kim, Gil-Pyo; 2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Lee, Minzae; Lee, Yoon Jae; 2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Bae, Seongjun; 2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Song, Hyeon Dong; Song, In Kyu; 2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Yi, Jongheop

2016-01-01

Highlights: • Highly dispersed Pt nanoparticles on N-doped carbon aerogel were synthesized for ORR. • Poly(ethyleneimine) was used as nitrogen source and as nucleation sites for Pt. • Precise discussion were conducted to clarify the effect of poly(ethyleneimine). • High Pt dispersion and N-doping results in superior electrocatalytic activity. - Abstract: A simple chemical process for the direct synthesis of a nitrogen (N)-doped carbon aerogel (NCA) with highly dispersed Pt nanoparticles via a poly(ethyleneimine) (PEI)-assisted strategy is described. A resorcinol-formaldehyde (RF) gel was treated with water soluble cationic PEI, which mainly functions as an anchoring site for metal ions. The functionalized PEI chains on the surface of the RF gel resulted in the unique formation of chemical complexes, with PtCl 6 2− anchored to the RF gel, and subsequent homogeneous metal nanoparticle growth. The abundant amino groups containing PEI grafted to the RF gel also allowed the nitrogen atoms to be incorporated into the carbon framework, which can directly be converted into a NCA. The spherical Pt nanoparticles in the resulting material (Pt/NCA) were highly dispersed on the surface of the NCA without any evidenced of agglomeration, even after a thermal annealing at 900 °C. Compared with a Pt/CA synthesized by a conventional reduction method, the Pt/NCA showed enhanced electrochemical performance with a high electrochemically active surface area (191.1 cm 2 g −1 ) and electrocatalytic activity (V onset = 0.95 V vs. RHE) with respect to oxygen reduction. The superior electrocatalytic activities of the Pt/NCA can be attributed to the synergistic effect of the highly dispersed Pt nanoparticles and the N-doped carbon supports that were prepared using the PEI-assisted strategy. The findings reported herein suggest that the use of PEI can be effectively extended to broad applications that require the homogeneous deposition of metal nanoparticles.

Alternative medicine and doping in sports

Directory of Open Access Journals (Sweden)

Benjamin Koh

2012-01-01

Full Text Available Athletes are high achievers who may seek creative or unconventional methods to improve performance. The literature indicates that athletes are among the heaviest users of complementary and alternative medicine (CAM and thus may pioneer population trends in CAM use. Unlike non-athletes, athletes may use CAM not just for prevention, treatment or rehabilitation from illness or injuries, but also for performance enhancement. Assuming that athletes’ creative use of anything unconventional is aimed at “legally” improving performance, CAM may be used because it is perceived as more “natural” and erroneously assumed as not potentially doping. This failure to recognise CAMs as pharmacological agents puts athletes at risk of inadvertent doping.The general position of the World Anti-Doping Authority (WADA is one of strict liability, an application of the legal proposition that ignorance is no excuse and the ultimate responsibility is on the athlete to ensure at all times whatever is swallowed, injected or applied to the athlete is both safe and legal for use. This means that a violation occurs whether or not the athlete intentionally or unintentionally, knowingly or unknowingly, used a prohibited substance/method or was negligent or otherwise at fault. Athletes are therefore expected to understand not only what is prohibited, but also what might potentially cause an inadvertent doping violation. Yet, as will be discussed, athlete knowledge on doping is deficient and WADA itself sometimes changes its position on prohibited methods or substances. The situation is further confounded by the conflicting stance of anti-doping experts in the media. These highly publicised disagreements may further portray inconsistencies in anti-doping guidelines and suggest to athletes that what is considered doping is dependent on the dominant political zeitgeist. Taken together, athletes may believe that unless a specific and explicit ruling is made, guidelines are

Alternative medicine and doping in sports.

Science.gov (United States)

Koh, Benjamin; Freeman, Lynne; Zaslawski, Christopher

2012-01-01

Athletes are high achievers who may seek creative or unconventional methods to improve performance. The literature indicates that athletes are among the heaviest users of complementary and alternative medicine (CAM) and thus may pioneer population trends in CAM use. Unlike non-athletes, athletes may use CAM not just for prevention, treatment or rehabilitation from illness or injuries, but also for performance enhancement. Assuming that athletes' creative use of anything unconventional is aimed at "legally" improving performance, CAM may be used because it is perceived as more "natural" and erroneously assumed as not potentially doping. This failure to recognise CAMs as pharmacological agents puts athletes at risk of inadvertent doping.The general position of the World Anti-Doping Authority (WADA) is one of strict liability, an application of the legal proposition that ignorance is no excuse and the ultimate responsibility is on the athlete to ensure at all times whatever is swallowed, injected or applied to the athlete is both safe and legal for use. This means that a violation occurs whether or not the athlete intentionally or unintentionally, knowingly or unknowingly, used a prohibited substance/method or was negligent or otherwise at fault. Athletes are therefore expected to understand not only what is prohibited, but also what might potentially cause an inadvertent doping violation. Yet, as will be discussed, athlete knowledge on doping is deficient and WADA itself sometimes changes its position on prohibited methods or substances. The situation is further confounded by the conflicting stance of anti-doping experts in the media. These highly publicised disagreements may further portray inconsistencies in anti-doping guidelines and suggest to athletes that what is considered doping is dependent on the dominant political zeitgeist. Taken together, athletes may believe that unless a specific and explicit ruling is made, guidelines are open to interpretation

Wideband and flat-gain amplifier based on high concentration erbium-doped fibres in parallel double-pass configuration

International Nuclear Information System (INIS)

Hamida, B A; Cheng, X S; Harun, S W; Naji, A W; Arof, H; Al-Khateeb, W; Khan, S; Ahmad, H

2012-01-01

A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achieved with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.

Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

2016-04-30

Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

International Nuclear Information System (INIS)

Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

2016-01-01

Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

Positron annihilation spectroscopy in doped p-type ZnO

Science.gov (United States)

Majumdar, Sayanee; Sanyal, D.

2011-07-01

Positron annihilation lifetime (PAL) spectroscopy has been used to investigate the vacancy type defect of the Li and N doped ZnO. The mono-vacancies, shallow -vacancies and open volume defects have been found in both the Li and N doped ZnO. The mono-vacancies, shallow-vacancies and open volume defects increase in N-doped ZnO as the size of N is quite high compared to Li. Positron annihilation study showed that the doping above 1-3% Li and 3-4% N in ZnO are not required in order to achieve low resistivity, high hole concentration and good mobility.

Calcium decorated and doped phosphorene for gas adsorption

Energy Technology Data Exchange (ETDEWEB)

Lalitha, Murugan; Nataraj, Yuvarani; Lakshmipathi, Senthilkumar, E-mail: lsenthilkumar@buc.edu.in

2016-07-30

Highlights: • Phosphorene exhibits n-type/p-type nature on decorating/doping calcium respectively. • Gas molecules (CH{sub 4}, CO{sub 2}, H{sub 2} and NH{sub 3}) are physisorbed on phosphorene. • Ca decorated Phosphorene is recommended for high density hydrogen storage applications. • Calcium doping on zigzag and armchair sites makes phosphorene more reactive. • CH{sub 4}, CO{sub 2}, H{sub 2} prefer Ca-doped on zigzag1 site, whereas ammonia prefers Ca-doped on armchair. - Abstract: In this paper, we present the results from first-principles study based on the electronic structure and adsorption characteristics of CH{sub 4}, CO{sub 2}, H{sub 2} and NH{sub 3} adsorbed on Ca decorated/doped phosphorene. Our study finds that phosphorene exhibits n-type behaviour on decorating calcium, and p-type on doping calcium. Gas molecules are physisorbed on both pristine and calcium-mediated phosphorene, visible through their lower binding energy and charge transfer values. Ca decorated phosphorene is suitable for hydrogen storage due to its higher binding energy for H{sub 2}. Ca doped structures shows increased binding affinity towards CH{sub 4} and NH{sub 3} in zigzag1 direction and armchair directions respectively. The extracts of our study implies that Ca doped phosphorene possess increased binding affinity towards gas molecules, and the results are highly helpful for gas adsorption and to design gas sensors based on calcium doped or decorated phosphorene.

High performance supercapacitor using N-doped graphene prepared via supercritical fluid processing with an oxime nitrogen source

International Nuclear Information System (INIS)

Balaji, S. Suresh; Elavarasan, A.; Sathish, M.

2016-01-01

Graphical abstract: N-doped graphene prepared via supercritical fluid processing with oxime nitrogen source (DMG) showed enhanced performance in electrochemical supercapacitor application. A maximum specific capacitance of 286 F g"−"1 at a current density of 0.5 A/g was achieved with a high specific capacity retention of 98% after 1000 cycles at 5 A/g. - Highlights: • N-functionalised graphene synthesized via supercritical fluid processing. • DMG, an oxime based nitrogen precursor. • Maximum specific capacitance of 286 F/g at 0.5 A/g in aqueous solution. • Pyridinic as well as quarternary nitrogen for enhanced capacitance. - Abstract: Heteroatom doped graphene has been proved for its promising applications in electrochemical energy storage systems. Here, nitrogen (N) doped graphene was prepared via two different techniques namely supercritical fluid assisted processing and hydrothermal heat treatment using dimethylglyoxime (DMG) as an oxime nitrogen precursor. The FT-IR and Raman spectra showed the N-containing functional group in the graphene. The XRD analysis revealed the complete reduction of graphene oxide during the supercritical fluid processing. The elemental analysis and X-ray photoelectron spectroscopy revealed the amount and nature of N-doping in the graphene, respectively. The surface morphology and physical nature of the samples were analyzed using scanning and transmission electron microscopic analysis. The electrochemical performance of prepared electrode materials was evaluated using cyclic voltammetry, galvanostatic charge-discharge analysis and electrochemical impedance spectroscopy. The N-doped graphene prepared via supercritical fluid assisted processing exhibit enhanced capacitive behaviour with a maximum specific capacitance of 286 F g"−"1 at a current density of 0.5 A/g. The cycling studies showed 98% specific capacity retention with 100% coulombic efficiency over 1000 cycles at 5 A/g. The enhanced specific capacitance of N-doped

A simple synthetic route of N-doped mesoporous carbon derived from casein extracted with cobalt ions for high rate performance supercapacitors

International Nuclear Information System (INIS)

Jia, Shaopei; Wang, Yanhui; Tian, Pengfei; Zhou, Shuyu; Cai, Haixia; Gao, Hongwei; Zang, Jianbing

2017-01-01

Highlights: •NMC is prepared by pyrolysis of cobalt-containing casein. •Cobalt-containing casein is extracted from the pure milk by cobalt ions. •The cobalt element increases the specific surface area and the N doping amount. •NMC exhibits high specific capacitance, high rate capability, and excellent cycling stability. -- Abstract: Nitrogen-doped mesoporous carbon (NMC) was synthesized via pyrolysis of cobalt-containing casein obtained by extraction from pure milk with the auxiliary of cobalt ions. The cobalt element in casein promoted specific surface area and N element doping amount of casein-derived porous carbon. The N-doped porous carbon obtained by carbonization at 800 °C (NPC-800) possessed a specific surface area of ∼886.7 m 2 g −1 , and the mesoporous size was centered at 2.7 and 7 nm. X-ray photoelectron spectroscopy analysis showed that the nitrogen content of NPC-800 was 3.29 at%. The NPC-800 was explored as a symmetric supercapacitor, which exhibited specific capacity of 380 F g −1 at a current density of 0.5 A g −1 , 218 F g −1 at a current density of 20 A g −1 , and high capacitance retention of 91.3% after charging/discharging 5,000 cycles.

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

2016-12-01

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2016-03-24

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Venkatesh, S.; Baras, A.; Roqan, I. S., E-mail: Iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

2016-03-15

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

Optical properties of single doped Cr3+ and co-doped Cr3+-Nd3+ aluminum tantalum tellurite glasses

International Nuclear Information System (INIS)

Rodriguez-Mendoza, U.R.; Speghini, A.; Jaque, D.; Zambelli, M.; Bettinelli, M.

2004-01-01

The optical properties for single doped Cr 3+ and co-doped Cr 3+ -Nd 3+ aluminum tantalum tellurite glasses have been studied as a function of temperature. For the single doped glass, the existence of two bands in the emission spectra at low temperature indicates the presence of two different sites for the Cr 3+ ions, labelled as usual as low- and high-field sites. The broad band centred in the Near Infrared region, corresponds to low-field sites transition 4 T 2 → 4 A 2 , and the narrow band centred at approximately 715 nm to the high-field sites transition 2 E→ 4 A 2 . The emission intensity for both high- and low-field sites shows a strong decrease with increasing temperature, with the emission for the former sites vanishing at RT. In both cases the quenching observed with the increase of temperature can be ascribed to the presence of non-radiative relaxation mechanisms. Experimental observations for the co-doped glass show that both radiative and non-radiative energy transfer processes from Cr 3+ to Nd 3+ are present

High energy transmission of Al2O3 doped with light transition metals

KAUST Repository

Schuster, Cosima

2012-01-31

The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

High energy transmission of Al2O3 doped with light transition metals

KAUST Repository

Schuster, Cosima; Klimke, J.; Schwingenschlö gl, Udo

2012-01-01

The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

EPR in non-doped irradiated polyacetylene

International Nuclear Information System (INIS)

Hola, O.; Stasko, A.; Foeldesova, M.

1993-01-01

The influence of γ-irradiation on the paramagnetic properties of non-doped polyacetylene at low and high radiation doses has been studied and summarized. The dependence of the EPR spectra on the radiation dose in irradiated polyacetylene has been measured. No essential changes of the spin mobility as a consequence of irradiation were observed. The measurements of spin concentration confirm the high resistivity of non-doped polyacetylene to radiation. (author) 9 refs

To dope or not to dope

DEFF Research Database (Denmark)

Overbye, Marie Birch; Knudsen, Mette Lykke; Pfister, Gertrud Ursula

2013-01-01

tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43%) represe......tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43......%) representing 40 sports completed aweb-based questionnaire. Participants were asked to imagine themselves in a situation in which theyhad to decide whether to dope or not to dope and then evaluate how different circumstances would affecttheir decisions.Results: Multiple circumstances had an effect on athletes......’ hypothetical decisions. The most effective deter-rents were related to legal and social sanctions, side-effects and moral considerations. Female athletesand younger athletes evaluated more reasons as deterrents than older, male athletes. When confrontedwith incentives to dope, the type of sport was often...

Properties and structure of high erbium doped phosphate glass for short optical fibers amplifiers

International Nuclear Information System (INIS)

Seneschal, Karine; Smektala, Frederic; Bureau, Bruno; Floch, Marie Le; Jiang Shibin; Luo, Tao; Lucas, Jacques; Peyghambarian, Nasser

2005-01-01

New phosphate glasses have been developed in order to incorporate high rare-earth ions concentrations. These glasses present a great chemical stability and a high optical quality. The phosphate glass network is open, very flexible, with a linkage of the tetrahedrons very disordered and contains a larger number of non-bridging oxygens (66%). The great stability and resistance against crystallization associated with the possibility to incorporate high doping concentration of rare-earth ions in these phosphate glasses make them very good candidates for the realization of ultra short single mode amplifiers with a high gain at 1.55 μm

Current anti-doping policy: a critical appraisal.

Science.gov (United States)

Kayser, Bengt; Mauron, Alexandre; Miah, Andy

2007-03-29

Current anti-doping in competitive sports is advocated for reasons of fair-play and concern for the athlete's health. With the inception of the World Anti Doping Agency (WADA), anti-doping effort has been considerably intensified. Resources invested in anti-doping are rising steeply and increasingly involve public funding. Most of the effort concerns elite athletes with much less impact on amateur sports and the general public. We review this recent development of increasingly severe anti-doping control measures and find them based on questionable ethical grounds. The ethical foundation of the war on doping consists of largely unsubstantiated assumptions about fairness in sports and the concept of a "level playing field". Moreover, it relies on dubious claims about the protection of an athlete's health and the value of the essentialist view that sports achievements reflect natural capacities. In addition, costly antidoping efforts in elite competitive sports concern only a small fraction of the population. From a public health perspective this is problematic since the high prevalence of uncontrolled, medically unsupervised doping practiced in amateur sports and doping-like behaviour in the general population (substance use for performance enhancement outside sport) exposes greater numbers of people to potential harm. In addition, anti-doping has pushed doping and doping-like behaviour underground, thus fostering dangerous practices such as sharing needles for injection. Finally, we argue that the involvement of the medical profession in doping and anti-doping challenges the principles of non-maleficience and of privacy protection. As such, current anti-doping measures potentially introduce problems of greater impact than are solved, and place physicians working with athletes or in anti-doping settings in an ethically difficult position. In response, we argue on behalf of enhancement practices in sports within a framework of medical supervision. Current anti-doping

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Energy Technology Data Exchange (ETDEWEB)

Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-05-09

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Unexpectedly high piezoelectricity of Sm-doped lead zirconate titanate in the Curie point region.

Science.gov (United States)

Seshadri, Shruti B; Nolan, Michelle M; Tutuncu, Goknur; Forrester, Jennifer S; Sapper, Eva; Esteves, Giovanni; Granzow, Torsten; Thomas, Pam A; Nino, Juan C; Rojac, Tadej; Jones, Jacob L

2018-03-07

Large piezoelectric coefficients in polycrystalline lead zirconate titanate (PZT) are traditionally achieved through compositional design using a combination of chemical substitution with a donor dopant and adjustment of the zirconium to titanium compositional ratio to meet the morphotropic phase boundary (MPB). In this work, a different route to large piezoelectricity is demonstrated. Results reveal unexpectedly high piezoelectric coefficients at elevated temperatures and compositions far from the MPB. At temperatures near the Curie point, doping with 2 at% Sm results in exceptionally large piezoelectric coefficients of up to 915 pm/V. This value is approximately twice those of other donor dopants (e.g., 477 pm/V for Nb and 435 pm/V for La). Structural changes during the phase transitions of Sm-doped PZT show a pseudo-cubic phase forming ≈50 °C below the Curie temperature. Possible origins of these effects are discussed and the high piezoelectricity is posited to be due to extrinsic effects. The enhancement of the mechanism at elevated temperatures is attributed to the coexistence of tetragonal and pseudo-cubic phases, which enables strain accommodation during electromechanical deformation and interphase boundary motion. This work provides insight into possible routes for designing high performance piezoelectrics which are alternatives to traditional methods relying on MPB compositions.

Differential analysis of the doping behaviour templates in three types of sports.

Science.gov (United States)

Rodek, Jelena; Idrizović, Kemal; Zenić, Natasa; Perasović, Benjamin; Kondric, Miran

2013-05-01

Conducted researches recognize various risk factors, as well as protective factors against doping behaviour in different sports i.e. sports disciplines or activities. The main goal of this research was to identify the correlation between selected socio-demographic, health-related, and sports-related predictors with doping factors in three different types of sports, which are (1) highly energetic demanding sports (weightlifting), (2) highly technical demanding sports (racquet sports), and (3) highly tactical demanding sports (sailing). The research consisted of three separate studies, each one of them researching one of the sports. The sample of subjects included altogether 293 athletes, senior level competitors (older than 18years of age). In total, the sample comprised three homogenous sub-samples, as follows: athletes in highly energetic demanding sports (weightlifters and power lifters; N=27), athletes in highly technical demanding sports (table tennis, tennis and badminton players; N=188), and athletes in highly tactical demanding sports (sailing; N=78). The first study involved weightlifters where we should point out the existence of high doping behaviour In this study, religiousness was interpreted as the most significant protective factor against doping behaviour, while sports factors are not found to be significantly related to doping. The study involving racquet sport athletes suggests a high risk of doping behaviour among those athletes who observe doping behaviour in their sport. We noticed low levels of athletes' trust in their coaches' and physicians' opinions on doping issues. This is an issue which should be researched in the future, because the underlying cause has not been studied as yet. Briefly, it seems that either the athletes are not convinced of their coaches '/physicians' expertise regarding doping issues, and/or they do not believe in their good intentions. It is particularly important, as the previous research has shown that with the

Microporous MOFs Engaged in the Formation of Nitrogen-Doped Mesoporous Carbon Nanosheets for High-Rate Supercapacitors.

Science.gov (United States)

Hou, Ya-Nan; Zhao, Zongbin; Yu, Zhengfa; Zhang, Su; Li, Shaofeng; Yang, Juan; Zhang, Han; Liu, Chang; Wang, Zhiyu; Qiu, Jieshan

2018-02-21

Nitrogen-doped mesoporous carbon nanosheets (NMCS) have been fabricated from zinc-based microporous metal-organic frameworks (ZIF-8) by pyrolysis in a molten salt medium. The as-prepared NMCS exhibit significantly improved specific capacitance (NMCS-8: 232 F g -1 at 0.5 A g -1 ) and capacitance retention ratio (75.9 % at 50 A g -1 ) compared with the micropore-dominant nitrogen-doped porous carbon polyhedrons (NPCP-5: 178 F g -1 at 0.5 A g -1 , 15.9 % at 20 A g -1 ) obtained by direct pyrolysis of nanocrystalline ZIF-8. The excellent capacitive performance and high rate performance of the NMCS can be attributed to their unique combination of structure and composition, that is, the two-dimensional and hierarchically porous structure provides a short ion-transport pathway and facilitates the supply of electrolyte ions, and the nitrogen-doped polar surface improves the interface wettability when used as an electrode. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A three-dimensional nitrogen-doped graphene structure: a highly efficient carrier of enzymes for biosensors

Science.gov (United States)

Guo, Jingxing; Zhang, Tao; Hu, Chengguo; Fu, Lei

2015-01-01

In recent years, graphene-based enzyme biosensors have received considerable attention due to their excellent performance. Enormous efforts have been made to utilize graphene oxide and its derivatives as carriers of enzymes for biosensing. However, the performance of these sensors is limited by the drawbacks of graphene oxide such as slow electron transfer rate, low catalytic area and poor conductivity. Here, we report a new graphene-based enzyme carrier, i.e. a highly conductive 3D nitrogen-doped graphene structure (3D-NG) grown by chemical vapour deposition, for highly effective enzyme-based biosensors. Owing to the high conductivity, large porosity and tunable nitrogen-doping ratio, this kind of graphene framework shows outstanding electrical properties and a large surface area for enzyme loading and biocatalytic reactions. Using glucose oxidase (GOx) as a model enzyme and chitosan (CS) as an efficient molecular binder of the enzyme, our 3D-NG based biosensors show extremely high sensitivity for the sensing of glucose (226.24 μA mM-1 m-2), which is almost an order of magnitude higher than those reported in most of the previous studies. The stable adsorption and outstanding direct electrochemical behaviour of the enzyme on the nanocomposite indicate the promising application of this 3D enzyme carrier in high-performance electrochemical biosensors or biofuel cells.In recent years, graphene-based enzyme biosensors have received considerable attention due to their excellent performance. Enormous efforts have been made to utilize graphene oxide and its derivatives as carriers of enzymes for biosensing. However, the performance of these sensors is limited by the drawbacks of graphene oxide such as slow electron transfer rate, low catalytic area and poor conductivity. Here, we report a new graphene-based enzyme carrier, i.e. a highly conductive 3D nitrogen-doped graphene structure (3D-NG) grown by chemical vapour deposition, for highly effective enzyme

Effects of Yttrium and Iron co-doping on the high temperature thermoelectric properties of Ca{sub 3}Co{sub 4}O{sub 9+δ}

Energy Technology Data Exchange (ETDEWEB)

Wu, NingYu, E-mail: niwu@dtu.dk; Van Nong, Ngo; Pryds, Nini; Linderoth, Søren

2015-07-25

Highlights: • The Fe and Fe/Y doping at the Co- and Ca-sites of Ca{sub 3}Co{sub 4}O{sub 9+δ} were investigated. • The rising ρ by Y doping can be mitigated by the coupled Fe doping. • The increased Seebeck coefficient by Y doping can be maintained in co-doped system. • The co-doped system leads to an improvement of the thermoelectric performance. • The co-doped system may preserve the merits from each component doping. - Abstract: A series of Y and Fe co-doped Ca{sub 3−x}Y{sub x}Co{sub 4−y}Fe{sub y}O{sub 9+δ} (0 ⩽ x ⩽ 0.3, 0 ⩽ y ⩽ 0.1) samples synthesized by auto-combustion reaction and followed by a spark plasma sintering (SPS) processing with the effects of Fe and Y doping on the high temperature (RT to 800 °C) thermoelectric properties were systematically investigated. For the Fe-doped system (x = 0, y ⩽ 0.1), the electrical resistivity (ρ) decreased over the whole measured temperature range, while the Seebeck coefficient (S) remained almost the same. For the co-doped system, at any fixed Fe doping content, both ρ and S tended to increase with increasing Y dopants, however, the effect is more substantial on ρ than on S, particularly in the low temperature regime. In contrast to ρ and S, the in-plane thermal conductivity (κ) is only slightly influenced by Y and Fe substitutions. Among all the investigated samples, the co-doped sample with x = 0.1 and y = 0.03 showed a decrease of ρ, enhanced power factor over the measured temperature range, and improved ZT at 800 °C as compared to un-doped Ca{sub 3}Co{sub 4}O{sub 9+δ}.

Low sintering temperature and high piezoelectric properties of Li-doped (Ba,Ca)(Ti,Zr)O3 lead-free ceramics

International Nuclear Information System (INIS)

Chen, Xiaoming; Ruan, Xuezheng; Zhao, Kunyun; He, Xueqing; Zeng, Jiangtao; Li, Yongsheng; Zheng, Liaoying; Park, Chul Hong; Li, Guorong

2015-01-01

Highlights: • Li-doped Ba 0.85 Ca 0.15 Ti 0.9 Zr 0.1 O 3 (BCZT) lead-free piezoceramics were prepared by the two-step synthesis and solid-state reaction method. • Their sintering temperature decreases from about 1540 °C down to about 1400 °C. • With the proper addition of Li, the densities and grain sizes of ceramics increase. • The ceramics not only have the characteristics of hard piezoceramics but also possesses the features of soft piezoceramics at low sintering temperature. - Abstract: Li-doped Ba 0.85 Ca 0.15 Ti 0.9 Zr 0.1 O 3 (BCZT) lead-free piezoelectric ceramics were prepared by the two-step synthesis and the solid-state reaction method. The density and grain size of ceramics sufficiently increases by Li-doped sintering aid, and their sintering temperature decreases from about 1540 °C down to about 1400 °C. X-ray diffraction reveals that the phase structure of Li-doped BCTZ ceramics is changed with the sintering temperature, which is consistent with their phase transition observed by the temperature-dependent dielectric curves. The well-poled Li-doped BCZT ceramics show a high piezoelectric constant d 33 (512 pC/N) and a planar electromechanical coupling factor k p (0.49), which have the characteristics of soft Pb(Zr,Ti)O 3 (PZT) piezoceramic, on the other hand, the mechanical quality factor Q m is about 190, which possesses the features of hard PZT piezoceramics. The enhanced properties of the Li-doped BCZT are explained by the combination of Li-doped effect and sintering effect on the microstructure and the phase transition around room temperature

Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

Directory of Open Access Journals (Sweden)

Chao Yan

2017-01-01

Full Text Available Heavy-phosphorus-doped silicon anodes were fabricated on CuO nanorods for application in high power lithium-ion batteries. Since the conductivity of lithiated CuO is significantly better than that of CuO, after the first discharge, the voltage cut-off window was then set to the range covering only the discharge–charge range of Si. Thus, the CuO core was in situ lithiated and acts merely as the electronic conductor in the following cycles. The Si anode presented herein exhibited a capacity of 990 mAh/g at the rate of 9 A/g after 100 cycles. The anode also presented a stable rate performance even at a current density as high as 20 A/g.

Photoluminescence of highly compensated GaAs doped with high concentration of Ge

Science.gov (United States)

Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

1999-12-01

We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

Preparation of high-purity Pr{sup 3+} doped Ge–As–Se–In–I glasses for active mid-infrared optics

Energy Technology Data Exchange (ETDEWEB)

Karaksina, E.V.; Shiryaev, V.S., E-mail: shiryaev@ihps.nnov.ru; Kotereva, T.V.; Velmuzhov, A.P.; Ketkova, L.A.; Snopatin, G.E.

2016-09-15

The multi-stage method for the synthesis of high-purity Ge–As–Se–In–I glasses doped with Pr{sup 3+} ions is developed. It is based on the chemical distillation purification of glass-forming melt and the chemical transport reactions for purification and vacuum loading of indium. The level of purity of glasses, synthesized by this method, is higher in comparison with the traditional direct melting method for glass synthesis. The high-purity Pr{sup 3+}-doped Ge–As–Se–In and Pr{sup 3+}-doped Ge–As–Se–In–I glass samples are prepared; the optical, thermal and luminescent properties are investigated. The purest host glass samples, obtained by the multi-stage purification techniques, contain a low concentration of limiting impurities: hydrogen − ≤0.05 ppm (wt) and oxygen − ≤0.1 ppm (wt), that is, at present, the best result for multi-component chalcogenide glasses for mid-IR active fibers. The samples of Pr{sup 3+}-doped Ge–As–Se–In glass fibers have the minimum optical losses of 0.58 dB/m at the wavelength of 2.72 μm and exhibit an intense broadband luminescence in the spectral range of 3.5–5.5 μm, with a maximum shifted to longer wavelengths as compared with the bulk samples.

Electrospark doping of steel with tungsten

International Nuclear Information System (INIS)

Denisova, Yulia; Shugurov, Vladimir; Petrikova, Elizaveta; Seksenalina, Malika; Ivanova, Olga; Ikonnikova, Irina; Kunitsyna, Tatyana; Vlasov, Victor; Klopotov, Anatoliy; Ivanov, Yuriy

2016-01-01

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties

Electrospark doping of steel with tungsten

Energy Technology Data Exchange (ETDEWEB)

Denisova, Yulia, E-mail: yukolubaeva@mail.ru; Shugurov, Vladimir, E-mail: shugurov@opee.hcei.tsc.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); Petrikova, Elizaveta, E-mail: elizmarkova@yahoo.com [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Seksenalina, Malika, E-mail: sportmiss@bk.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Ivanova, Olga, E-mail: ivaov@mail.ru; Ikonnikova, Irina, E-mail: irinaikonnikova@yandex.ru [Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Kunitsyna, Tatyana, E-mail: kma11061990@mail.ru; Vlasov, Victor, E-mail: rector@tsuab.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Klopotov, Anatoliy, E-mail: klopotovaa@tsuab.ru [National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Ivanov, Yuriy, E-mail: yufi55@mail.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation)

2016-01-15

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties.

Doping monolayer graphene with single atom substitutions

KAUST Repository

Wang, Hongtao

2012-01-11

Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.

Unusually high critical current of P-doped BaFe{sub 2}As{sub 2} single crystalline thin film

Energy Technology Data Exchange (ETDEWEB)

Kurth, Fritz; Engelmann, Jan; Schultz, Ludwig [IMW, IFW Dresden, Dresden (Germany); TU Dresden, Dresden (Germany); Tarantini, Chiara; Jaroszynski, Jan [ASC, NHMFL, Florida (United States); Grinenko, Vadim; Reich, Elke; Huehne, Ruben [IMW, IFW Dresden, Dresden (Germany); Haenisch, Jens [IMW, IFW Dresden, Dresden (Germany); ITEP, KIT, Karlsruhe (Germany); Mori, Yasohiro; Sakagami, Akihiro; Kawaguchi, Takahiko; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan); Holzapfel, Bernhard [ITEP, KIT, Karlsruhe (Germany); Iida, Kazumasa [IMW, IFW Dresden, Dresden (Germany); Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan)

2015-07-01

Microstructurally clean, isovalently P-doped BaFe{sub 2}As{sub 2} single crystalline thin films have been prepared by molecular beam epitaxy. These films show a superconducting transition temperature (T{sub c}) of over 30 K and high transport self-field critical current densities (J{sub c}) of over 6 MA/cm{sup 2} at 4.2 K, which are among the highest for Fe based superconductors. In-field J{sub c} exceeds 0.1 MA/cm{sup 2} at μ{sub 0}H = 35 T for H parallel ab and μ{sub 0}H = 18 T for H parallel c, respectively, in spite of moderate upper critical fields compared to other FeSCs with similar T{sub c}. This unusually high J{sub c} makes P-doped Ba-122 very favorable for high-field magnet applications.

Potassium-doped copper oxide nanoparticles synthesized by a solvothermal method as an anode material for high-performance lithium ion secondary battery

International Nuclear Information System (INIS)

Thi, Trang Vu; Rai, Alok Kumar; Gim, Jihyeon; Kim, Jaekook

2014-01-01

A simple and efficient approach was developed to synthesize CuO nanoparticles with improved electrochemical performance. Potassium (K + )-doped CuO nanoparticles were synthesized by a simple and cost-effective solvothermal method followed by annealing at 500 °C for 5 h under air atmosphere. For comparison, an undoped CuO sample was also synthesized under the same conditions. X-ray diffraction analysis demonstrates that the K + ion doping caused no change in the phase structure, and highly crystalline K x Cu 1−x O 1−δ (x = 0.10) powder without any impurity was obtained. As an anode material for a lithium ion battery, the K + -doped CuO nanoparticle electrode exhibited better capacity retention with a reversible capacity of over 354.6 mA h g −1 for up to 30 cycles at 0.1 C, as well as a high charge capacity of 162.3 mA h g −1 at a high current rate of 3.2 C, in comparison to an undoped CuO electrode (275.9 mA h g −1 at 0.1 C and 68.9 mA h g −1 at 3.2 C). The high rate capability and better cycleability of the doped electrode can be attributed to the influence of the K + ion nanostructure on the increased electronic conductivity, diffusion efficiency, and kinetic properties of CuO during the lithiation and delithiation process.

Potassium-doped copper oxide nanoparticles synthesized by a solvothermal method as an anode material for high-performance lithium ion secondary battery

Science.gov (United States)

Thi, Trang Vu; Rai, Alok Kumar; Gim, Jihyeon; Kim, Jaekook

2014-06-01

A simple and efficient approach was developed to synthesize CuO nanoparticles with improved electrochemical performance. Potassium (K+)-doped CuO nanoparticles were synthesized by a simple and cost-effective solvothermal method followed by annealing at 500 °C for 5 h under air atmosphere. For comparison, an undoped CuO sample was also synthesized under the same conditions. X-ray diffraction analysis demonstrates that the K+ ion doping caused no change in the phase structure, and highly crystalline KxCu1-xO1-δ (x = 0.10) powder without any impurity was obtained. As an anode material for a lithium ion battery, the K+-doped CuO nanoparticle electrode exhibited better capacity retention with a reversible capacity of over 354.6 mA h g-1 for up to 30 cycles at 0.1 C, as well as a high charge capacity of 162.3 mA h g-1 at a high current rate of 3.2 C, in comparison to an undoped CuO electrode (275.9 mA h g-1 at 0.1 C and 68.9 mA h g-1 at 3.2 C). The high rate capability and better cycleability of the doped electrode can be attributed to the influence of the K+ ion nanostructure on the increased electronic conductivity, diffusion efficiency, and kinetic properties of CuO during the lithiation and delithiation process.

Hollow Amorphous MnSnO3 Nanohybrid with Nitrogen-Doped Graphene for High-Performance Lithium Storage

International Nuclear Information System (INIS)

Liu, Peng; Hao, Qingli; Xia, Xifeng; Lei, Wu; Xia, Hui; Chen, Ziyang; Wang, Xin

2016-01-01

Graphical abstract: A novel hybrid of hollow amorphous MnSnO 3 nanoparticles and nitrogen-doped reduced graphene oxide was fabricated. The unique structure and well-combination of both components account for the ultra long-term cyclic life with high reversible capacity of 610 mAh g −1 over 1000 cycles at 400 mA g −1 . - Highlights: • Novel hybrid of MnSnO 3 and nitrogen-doped reduced graphene oxide was fabricated. • The MnSnO 3 nanoparticles possess amorphous and hollow structure in the composite. • The excellent electrochemical performance benefits from unique nanostructure. • The reversible capacity of as-prepared hybrid is 610 mAh g −1 after 1000 cycles. • A long-term life with 97.3% capacity retention over 1000 cycles was obtained. - Abstract: Tin-based metal oxides usually suffer from severe capacity fading resulting from aggregation and considerable volume variation during the charge/discharge process in lithium ion batteries. In this work, a novel nanocomposite (MTO/N-RGO) of hollow amorphous MnSnO 3 (MTO) nanoparticles and nitrogen-doped reduced graphene oxide (N-RGO) has been designed and synthesized by a two-step method. Firstly, the nitrogen-doped graphene nanocomposite (MTO/N-RGO-P) with MnSn(OH) 6 crystal nanoparticles was synthesized by a facile solvothermal method. Subsequently, the MTO/N-RGO nanocomposite was obtained through the post heat treatment of MTO/N-RGO-P. The designed heterostructure and well-combination of the hollow amorphous MTO and N-RGO matrix can accelerate the ionic and electronic transport, and simultaneously accommodate the aggregation and volume variation of MTO nanoparticles during the lithiation–delithiation cycles. The as-prepared hybrid of MTO and N-RGO (MTO/N-RGO) exhibits a high reversible capacity of 707 mAh g −1 after 110 cycles at 200 mA g −1 , superior rate capability, and long-term cyclic life with high capacity of 610 mAh g −1 over 1000 cycles at 400 mA g −1 . Superior capacity retention of

In Situ Synthesis of Tungsten-Doped SnO2 and Graphene Nanocomposites for High-Performance Anode Materials of Lithium-Ion Batteries.

Science.gov (United States)

Wang, Shuai; Shi, Liyi; Chen, Guorong; Ba, Chaoqun; Wang, Zhuyi; Zhu, Jiefang; Zhao, Yin; Zhang, Meihong; Yuan, Shuai

2017-05-24

The composite of tungsten-doped SnO 2 and reduced graphene oxide was synthesized through a simple one-pot hydrothermal method. According to the structural characterization of the composite, tungsten ions were doped in the unit cells of tin dioxide rather than simply attaching to the surface. Tungsten-doped SnO 2 was in situ grown on the surface of graphene sheet to form a three-dimensional conductive network that enhanced the electron transportation and lithium-ion diffusion effectively. The issues of SnO 2 agglomeration and volume expansion could be also avoided because the tungsten-doped SnO 2 nanoparticles were homogeneously distributed on a graphene sheet. As a result, the nanocomposite electrodes of tungsten-doped SnO 2 and reduced graphene oxide exhibited an excellent long-term cycling performance. The residual capacity was still as high as 1100 mA h g -1 at 0.1 A g -1 after 100 cycles. It still remained at 776 mA h g -1 after 2000 cycles at the current density of 1A g -1 .

Enhanced electrochemical capacitance and oil-absorbability of N-doped graphene aerogel by using amino-functionalized silica as template and doping agent

Science.gov (United States)

Du, Yongxu; Liu, Libin; Xiang, Yu; Zhang, Qiang

2018-03-01

The development of novel energy storage devices with high power density and energy density is highly desired. However, as a promising material, the strong π-π interaction of graphene inhibits its applications. Herein, we provide a new approach that amino-functionalized silica are used as both templates to prevent the restacking of the graphene sheets and doping agents simultaneously. The microstructures, porous properties and chemical composition of the resulted N-doped reduced graphene oxide (RGO) aerogels, characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman, X-ray photoelectron spectroscopy and Brunauer-Emmett-Teller measurement, indicate that the amount of SiO2-NH2 has profound effects on the surface area and carbon activity of the graphene sheets. Benefiting from the large specific surface area of 481.8 m2 g-1, low series resistances and high nitrogen doping content (4.4 atom%), the as-fabricated 3D hierarchical porous N-doped RGO aerogel electrode exhibits outstanding electrochemical performance in aqueous and organic electrolyte, such as ultrahigh specific capacitances of 350 F g-1 at a current density of 1 A g-1 and excellent reversibility with a cycling efficiency of 88% after 10000 cycles. In addition, the N-doped RGO aerogels possess high oil-absorbability with long recyclability.

A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs

International Nuclear Information System (INIS)

Wang Wei; Li Na; Ren Yuzhou; Li Hao; Zheng Lifen; Li Jin; Jiang Junjie; Chen Xiaoping; Wang Kai; Xia Chunping

2013-01-01

The effects of linear doping profile near the source and drain contacts on the switching and high-frequency characteristics for conventional single-material-gate CNTFET (C-CNTFET) and hetero-material-gate CNTFET (HMG-CNTFET) have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self-consistently with Poisson's equations. The simulation results show that at a CNT channel length of 20 nm with chirality (7, 0), the intrinsic cutoff frequency of C-CNTFETs reaches up to a few THz. In addition, a comparison study has been performed between C-and HMG-CNTFETs. For the C-CNTFET, results reveal that a longer linear doping length can improve the cutoff frequency and switching speed. However, it has the reverse effect on on/off current ratios. To improve the on/off current ratios performance of CNTFETs and overcome short-channel effects (SCEs) in high-performance device applications, a novel CNTFET structure with a combination of an HMG and linear doping profile has been proposed. It is demonstrated that the HMG structure design with an optimized linear doping length has improved high-frequency and switching performances as compared to C-CNTFETs. The simulation study may be useful for understanding and optimizing high-performance of CNTFETs and assessing the reliability of CNTFETs for prospective applications. (semiconductor devices)

A feasibility study on long-life reduced-moderation water reactor with highly protected Pu breeding by doping with minor actinides

International Nuclear Information System (INIS)

Hamase, Erina; Damian, Frederic; Poinot-salanon, Christine; Saito, Masaki; Sagara, Hiroshi; Han, Chi Young

2013-01-01

Highlights: ► The present paper is focused on a reduced-moderation water reactor. ►237 Np or 241 Am was doped into the inner blanket. ►238 Pu transmuted from MA works as a fissionable nuclide. ► It also contributes to increasing the proliferation resistance of Pu. ► Long-life core and highly protected Pu breeding were simultaneously achieved. - Abstract: The present paper is focused on the feasibility of reduced-moderation water reactor (RMWR) which could simultaneously achieve the extension of core life-time, and highly protected plutonium (Pu) breeding performance with short compound system doubling time (CSDT) by neptunium-237 ( 237 Np) or americium-241 ( 241 Am) doping of the inner blanket of the RMWR. As a preliminary analysis of the RMWR, a simplified fuel pin configuration was analyzed. In case of 60% doping of 237 Np and 241 Am in the inner blanket, the maximum available effective full power days (EFPDs) were much longer and were about 15,100 and 14,200 EFPDs, respectively. For the proliferation resistance of Pu produced in the blanket, the total Pu in the inner and lower/upper blanket was below the practically unusable criterion for an explosive device proposed by Pellaud, and was technically unfeasible for high-technology hypothetical nuclear explosive devices (HNEDs) proposed by Kessler and Kimura. The protected Pu breeding performance was analyzed and in case of 60% doping of 237 Np and 241 Am, CSDT was short by approximately 40 and 50 years. Therefore, the feasibility of RMWR was shown which could simultaneously achieve the extension of core life-time and have highly protected Pu breeding performance with short CSDT by doping the inner blanket with minor actinides (MAs). The objective of this study was thus to evaluate the performance of the concept with respect to the core life-time, proliferation resistance of Pu and CSDT. The technological feasibility of such core concept will have to be evaluated by further dedicated analyses

High Capacity of Hard Carbon Anode in Na-Ion Batteries Unlocked by PO _x Doping

Energy Technology Data Exchange (ETDEWEB)

Li, Zhifei; Ma, Lu; Surta, Todd Wesley; Bommier, Clement; Jian, Zelang; Xing, Zhenyu; Stickle, William F.; Dolgos, Michelle; Amine, Khalil; Lu, Jun; Wu, Tianpin; Ji, Xiulei

2016-08-12

The capacity of hard carbon anodes in Na-ion batteries 2.5 rarely reaches values beyond 300 mAh/g. We report that doping POx into local structures of hard carbon increases its reversible capacity from 283 to 359 mAh/g. We confirm that the doped POx is redox inactive by X-ray adsorption near edge structure measurements, thus not contributing to the higher capacity. We observe two significant changes of hard carbon's local structures caused by doping. First, the (002) d-spacing inside the turbostratic nanodomains is increased, revealed by both laboratory and synchrotron X-ray diffraction. Second, doping turns turbostratic nanodomains more defective along ab planes, indicated by neutron total scattering and the associated pair distribution function studies. The local structural changes of hard carbon are correlated to the higher capacity, where both the plateau and slope regions in the potential profiles are enhanced. Our study demonstrates that Na-ion storage in hard carbon heavily depends on carbon local structures, where such structures, despite being disordered, can be tuned toward unusually high capacities.

Synthesis and Characterization of Highly Sensitive Hydrogen (H2 Sensing Device Based on Ag Doped SnO2 Nanospheres

Directory of Open Access Journals (Sweden)

Zhaorui Lu

2018-03-01

Full Text Available In this paper, pure and Ag-doped SnO2 nanospheres were synthesized by hydrothermal method and characterized via X-ray powder diffraction (XRD, field emission scanning electron microscopy (FESEM, energy dispersive spectroscopy (EDS, and X-ray photoelectron spectra (XPS, respectively. The gas sensing performance of the pure, 1 at.%, 3 at.%, and 5 at.% Ag-doped SnO2 sensing devices toward hydrogen (H2 were systematically evaluated. The results indicated that compared with pure SnO2 nanospheres, Ag-doped SnO2 nanospheres could not only decrease the optimum working temperature but also significantly improve H2 sensing such as higher gas response and faster response-recovery. Among all the samples, the 3 at.% Ag-doped SnO2 showed the highest response 39 to 100 μL/L H2 at 300 °C. Moreover, its gas sensing mechanism was discussed, and the results will provide reference and theoretical guidance for the development of high-performance SnO2-based H2 sensing devices.

Stable iodide doping induced by photonic curing for carbon nanotube transparent conductive films

Science.gov (United States)

Wachi, Atsushi; Nishikawa, Hiroyuki; Zhou, Ying; Azumi, Reiko

2018-06-01

Doping has become crucial for achieving stable and high-performance conductive transparent carbon nanotube (CNT) films. In this study, we systematically investigate the doping effects of a few materials including alkali metal iodides, nonmetal iodide, and metals. We demonstrate that photonic curing can enhance the doping effects, and correspondingly improve the conductivity of CNT films, and that such iodides have better doping effects than metals. In particular, doping with a nonmetal compound (NH4I) shows the largest potential to improve the conductivity of CNT films. Typically, doping with metal iodides reduces the sheet resistance (R S) of CNT films with 70–80% optical transmittances at λ = 550 nm from 600–2400 to 250–440 Ω/square, whereas doping with NH4I reduces R S to 57 and 84 Ω/square at 74 and 84% optical transmittances, respectively. Interestingly, such a doped CNT film exhibits only a slight increase in sheet resistance under an extreme environment of high temperature (85 °C) and high relative humidity (85%) for 350 h. The results suggest that photonic-curing-induced iodide doping is a promising approach to producing high-performance conductive transparent CNT films.

Radiation hardness of Ce-doped sol-gel silica fibers for high energy physics applications.

Science.gov (United States)

Cova, Francesca; Moretti, Federico; Fasoli, Mauro; Chiodini, Norberto; Pauwels, Kristof; Auffray, Etiennette; Lucchini, Marco Toliman; Baccaro, Stefania; Cemmi, Alessia; Bártová, Hana; Vedda, Anna

2018-02-15

The results of irradiation tests on Ce-doped sol-gel silica using x- and γ-rays up to 10 kGy are reported in order to investigate the radiation hardness of this material for high-energy physics applications. Sol-gel silica fibers with Ce concentrations of 0.0125 and 0.05 mol. % are characterized by means of optical absorption and attenuation length measurements before and after irradiation. The two different techniques give comparable results, evidencing the formation of a main broad radiation-induced absorption band, peaking at about 2.2 eV, related to radiation-induced color centers. The results are compared with those obtained on bulk silica. This study reveals that an improvement of the radiation hardness of Ce-doped silica fibers can be achieved by reducing Ce content inside the fiber core, paving the way for further material development.

N-Doped carbon spheres with hierarchical micropore-nanosheet networks for high performance supercapacitors.

Science.gov (United States)

Wang, Shoupei; Zhang, Jianan; Shang, Pei; Li, Yuanyuan; Chen, Zhimin; Xu, Qun

2014-10-18

N-doped carbon spheres with hierarchical micropore-nanosheet networks (HPSCSs) were facilely fabricated by a one-step carbonization and activation process of N containing polymer spheres by KOH. With the synergy effect of the multiple structures, HPSCSs exhibit a very high specific capacitance of 407.9 F g(-1) at 1 mV s(-1) (1.2 times higher than that of porous carbon spheres) and a robust cycling stability for supercapacitors.

Cr3+ and Nb5+ co-doped Ti2Nb10O29 materials for high-performance lithium-ion storage

Science.gov (United States)

Yang, Chao; Yu, Shu; Ma, Yu; Lin, Chunfu; Xu, Zhihao; Zhao, Hua; Wu, Shunqing; Zheng, Peng; Zhu, Zi-Zhong; Li, Jianbao; Wang, Ning

2017-08-01

Ti2Nb10O29 is an advanced anode material for lithium-ion batteries due to its large specific capacity and high safety. However, its poor electronic/ionic conductivity significantly limits its rate capability. To tackle this issue, a Cr3+-Nb5+ co-doping is employed, and a series of CrxTi2-2xNb10+xO29 compounds are prepared. The co-doping does not change the Wadsley-Roth shear structure but increases the unit-cell volume and decreases the particle size. Due to the increased unit-cell volumes, the co-doped samples show increased Li+-ion diffusion coefficients. Experimental data and first-principle calculations reveal significantly increased electronic conductivities arising from the formation of impurity bands after the co-doping. The improvements of the electronic/ionic conductivities and the smaller particle sizes in the co-doped samples significantly contribute to improving their electrochemical properties. During the first cycle at 0.1 C, the optimized Cr0.6Ti0.8Nb10.6O29 sample delivers a large reversible capacity of 322 mAh g-1 with a large first-cycle Coulombic efficiency of 94.7%. At 10 C, it retains a large capacity of 206 mAh g-1, while that of Ti2Nb10O29 is only 80 mAh g-1. Furthermore, Cr0.6Ti0.8Nb10.6O29 shows high cyclic stability as demonstrated in over 500 cycles at 10 C with tiny capacity loss of only 0.01% per cycle.

Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

Science.gov (United States)

Zou, Xuming; Liu, Xingqiang; Wang, Chunlan; Jiang, Ying; Wang, Yong; Xiao, Xiangheng; Ho, Johnny C; Li, Jinchai; Jiang, Changzhong; Xiong, Qihua; Liao, Lei

2013-01-22

In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs. A series of scaling effects in the mobility, transconductance, threshold voltage, and source-drain current with respect to the device channel length are also observed. Specifically, a small gate delay time (0.01 ns) and high on-current density (0.9 mA/μm) are obtained at 300 nm channel length. Furthermore, Mg-doped In(2)O(3) NWs are then employed to fabricate NW parallel array FETs with a high saturation current (0.5 mA), on/off ratio (>10(9)), and field-effect mobility (110 cm(2)/V·s), while the subthreshold slope and threshold voltage do not show any significant changes. All of these results indicate the great potency for metal-doped In(2)O(3) NWs used in the low-power, high-performance thin-film transistors.

Effect of high pressure on the ground state of low doped manganite: a neutron diffraction and transport property study

International Nuclear Information System (INIS)

Ghosh, Barnali; Raychaudhuri, A.K.; Siruguri, V.; Chatterji, Tapan; Thomas, Hansen; Mukovskii, Ya.M.

2013-01-01

Depending on the doping level x the hole-doped perovskite manganites, like La 1-x Ca x MnO 3 exhibit a wide variety of physical properties. These compounds lead their high sensitivity to thermodynamic variables like temperature, magnetic field and pressure. The structure can be modified by application of high pressure and it can be quantitative that changes the Mn-O bond length and increases the Mn-O-Mn bond angle. In some cases the pressure can bring about qualitative changes in the structure like change in the lattice structure or its symmetry. These structural factors can contribute to the effective electron transfer integral between Mn ions, which in turn can change the magnetic exchanges like the double-exchange as well as the super exchange. For low hole doping (0.15 ≤ x ≤ 0.2), the low temperature ground state is Ferromagnetic insulator (FMI). The ground state of the low doped manganite La 0.79 Ca 0.21 MnO 3 (LCMO) can be destabilized by external hydrostatic pressure. We have done electrical transport measurement under magnetic field and under high pressure for understanding the nature of the resulting phase(s) that arise from the applied hydrostatic pressure. We find that the metallic phase so created under pressure has no appreciable magnetoresistance (MR). The Neutron powder diffraction measurement done on D20 diffractometer (λ=1.3Å) at ILL, Grenoble, France under high hydrostatic pressure up to 10GPa shows that the pressure leads to a change in the crystal structure from orthorhombic to rhombohedral and leading to a change in magnetic structure also; and most importantly collapse of the magnetic moment to a low value that leads to absence of any MR under pressure induced metallization. (author)

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

International Nuclear Information System (INIS)

Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

2016-01-01

This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

Novel high resolution 125I brachytherapy source dosimetry using Ge-doped optical fibres

International Nuclear Information System (INIS)

Issa, Fatma; Hugtenburg, Richard P.; Nisbet, Andrew; Bradley, David A.

2013-01-01

The steep dose gradients close to brachytherapy sources limit the ability to obtain accurate measurements of dose. Here we use a novel high spatial resolution dosimeter to measure dose around a 125 I source and compare against simulations. Ge-doped optical fibres, used as thermoluminescent dosimeters, offer sub-mm spatial resolution, linear response from 10 cGy to >1 kGy and dose-rate independence. For a 125 I brachytherapy seed in a PMMA phantom, doses were obtained for source-dosimeter separations from 0.1 cm up to several cm, supported by EGSnrc/DOSRZznrc Monte Carlo simulations and treatment planning system data. The measurements agree with simulations to within 2.3%±0.3% along the transverse and perpendicular axes and within 3.0%±0.5% for measurements investigating anisotropy in angular dose distribution. Measured and Veriseed™ brachytherapy treatment planning system (TPS) values agreed to within 2.7%±0.5%. Ge-doped optical fibre dosimeters allow detailed dose mapping around brachytherapy sources, not least in situations of high dose gradient. - Highlights: • We evaluate fall-off in dose for distances from an 125 I source of 1 mm to 60 mm. • The TL of optical fibres accommodate high dose gradients and doses that reduce by a factor of 10 3 across the range of separations. • We verify measured values using DOSRZnrc Monte Carlo code simulations and the Variseed™ Treatment Planning System. • Measured radial and angular dose are obtained with ≤3% uncertainty

Low Reflectivity and High Flexibility of Tin-Doped Indium Oxide Nanofiber Transparent Electrodes

KAUST Repository

Wu, Hui

2011-01-12

Tin-doped indium oxide (ITO) has found widespread use in solar cells, displays, and touch screens as a transparent electrode; however, two major problems with ITO remain: high reflectivity (up to 10%) and insufficient flexibility. Together, these problems severely limit the applications of ITO films for future optoelectronic devices. In this communication, we report the fabrication of ITO nanofiber network transparent electrodes. The nanofiber networks show optical reflectivity as low as 5% and high flexibility; the nanofiber networks can be bent to a radius of 2 mm with negligible changes in the sheet resistance. © 2010 American Chemical Society.

Cryogenic vacuum pumping at the LBL 88-inch cyclotron

International Nuclear Information System (INIS)

Elo, D.; Morris, D.; Clark, D.J.; Gough, R.A.

1978-09-01

A cryogenic vacuum pumping panel has been in operation at the 88-inch cyclotron since 1974. The nude pumping panel is located in the acceleration chamber. The pumping surface consists of tubing cooled to 20 0 K by a closed loop helium refrigeration system. The pumping surfaces are shielded from radiation heat loads and water vapors by liquid nitrogen cooled baffles. The panel was designed for an average pumping speed of 14,000 liters/sec. for air. This approximately tripled the total effective pumping on the acceleration chamber from the existing diffusion pumped system, significantly reducing charge exchange losses of heavy ions during acceleration. Design, installation and performance characteristics are described

Metallurgical Evaluation of the Five-Inch Cylindrical Induction Melter

International Nuclear Information System (INIS)

Imrich, K.J.

2000-01-01

A metallurgical evaluation of the 5-inch cylindrical induction melter (CIM) vessel was performed by the Materials Technology Section to evaluate the metallurgical condition after operating for approximately 375 hours at 1400 to 1500 Degrees Celsius during a 2 year period. Results indicate that wall thinning and significant grain growth occurred in the lower portion of the conical section and the drain tube. No through-wall penetrations were found in the cylindrical and conical sections of the CIM vessel and only one leak site was identified in the drain tube. Failure of the drain tube was associated with a localized over heating and intercrystalline fracture

Copper doped borate dosimeters revisited

International Nuclear Information System (INIS)

Alajerami, Y.S.M.; Hashim, S.; Ghoshal, S.K.; Bradley, D.A.; Mhareb, M.; Saleh, M.A.

2014-01-01

We render a panoramic overview on copper (Cu) doped borate dosimeters. Preparing a dosimeter by mixing specific materials with precise weights and methods is a never-ending quest. The recommended composition is highly decisive for accurate estimation of the absorbed dose, prediction of the biological outcome, determination of the treatment dose for radiation therapy and facilitation of personal monitoring. Based on these principles, the proposed dosimeter must cover a series of dosimetric properties to realize the exact results and assessment. The doped borate dosimeters indeed demonstrate attractive thermoluminescence (TL) features. Several dedicated efforts are attempted to improve the luminescence properties by doping various transition metals or rare-earth elements. The Cu ion being one of the preferred activators shows excellent TL properties as revealed via detail comparison with other dosimeters. Two oxide states of Cu (Cu + and Cu ++ ) with reasonable atomic number allow easy interaction with boron network. Interestingly, the intrinsic luminescent centers of borate lattice are in cross linked with that of Cu + ions. Thus, the activation of borate dosimeter with Cu ions for the enhancement of the TL sensitivity is recognized. These dosimeters reveal similar glow curves as the standard TLD-100 (LiF:Mg,Ti) one irrespective of the use of modifiers and synthesis techniques. They display high sensitivity, low fading, dose response linearity over wide range and practical minimum detectable dose. Furthermore, the effective atomic number being the most beneficial aspect (equivalent to that of human tissue) of borate dosimeters do not show any change due to Cu ion activations. The past development, major challenges, excitement, applications, recent progress and the future promises of Cu doped borate TL dosimeters are highlighted. - Highlights: • The manuscript gives a panoramic overview on copper doped borate dosimeters. • Cu ions activated technique in borate

Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

DEFF Research Database (Denmark)

Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei

2016-01-01

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors ...

The Anti-Doping Movement.

Science.gov (United States)

Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

2016-03-01

Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

Graphene oxide quantum dot-derived nitrogen-enriched hybrid graphene nanosheets by simple photochemical doping for high-performance supercapacitors

Science.gov (United States)

Xu, Yongjie; Li, Xinyu; Hu, Guanghui; Wu, Ting; Luo, Yi; Sun, Lang; Tang, Tao; Wen, Jianfeng; Wang, Heng; Li, Ming

2017-11-01

Nitrogen-enriched graphene was fabricated via a facile strategy. Graphene oxide (GO) nanosheets and graphene oxide quantum dots (GQDs) were used as a structure-directing agent and in situ activating agent, respectively, after photoreduction under NH3 atmosphere. The combination of photoreduction and NH3 not only reduced GO and GQD composites (GO/GQDs) within a shorter duration but also doped a high level of nitrogen on the composites (NrGO/GQDs). The nitrogen content of NrGO/GQDs reached as high as 18.86 at% within 5 min of irradiation. Benefiting from the nitrogen-enriched GO/GQDs hybrid structure, GQDs effectively prevent the agglomeration of GO sheets and increased the numbers of ion channels in the material. Meanwhile, the high levels of nitrogen improved electrical conductivity and strengthened the binding energy between GQD and GO sheets. Compared with reduced GO and low nitrogen-doped reduced GO, NrGO/GQD electrodes exhibited better electrochemical characteristics with a high specific capacitance of 344 F g-1 at a current density of 0.25 A g-1. Moreover, the NrGO/GQD electrodes exhibited 82% capacitance retention after 3000 cycles at a current density of 0.8 A g-1 in 6 M KOH electrolyte. More importantly, the NrGO/GQD electrodes deliver a high energy density of 43 Wh kg-1 at a power density of 417 W kg-1 in 1 M Li2SO4 electrolyte. The nitrogen-doped graphene and corresponding supercapacitor presented in this study are novel materials with potential applications in advanced energy storage systems.

doped ZnO thick film resistors

Indian Academy of Sciences (India)

The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

Using rare earth doped thiosilicate phosphors in white light emitting LEDs: Towards low colour temperature and high colour rendering

International Nuclear Information System (INIS)

Smet, P.F.; Korthout, K.; Haecke, J.E. van; Poelman, D.

2008-01-01

Rare earth doped thiosilicates are promising materials for use in phosphor converted light emitting diodes (pcLEDs). These phosphors (including the hosts Ca 2 SiS 4 , BaSi 2 S 5 and Ba 2 SiS 4 in combination with Ce 3+ and/or Eu 2+ doping) cover the entire visible part of the spectrum, as the emission colour can be changed from deep blue to red. The photoluminescence emission spectrum and the overlap of the excitation spectrum with the emission of pumping LEDs is evaluated. The trade-off between high colour rendering and high electrical-to-optical power efficiency is discussed by simulation with both blue and UV emitting LEDs. Finally, a phosphor combination with low colour temperature (3000 K) and high colour rendering (CRI = 93) is proposed

Doped Organic Transistors.

Science.gov (United States)

Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

2016-11-23

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

Highly Doped Phosphate Glass Fibers for Compact Lasers and Amplifiers: A Review

Directory of Open Access Journals (Sweden)

Nadia Giovanna Boetti

2017-12-01

Full Text Available In recent years, the exploitation of compact laser sources and amplifiers in fiber form has found extensive applications in industrial and scientific fields. The fiber format offers compactness, high beam quality through single-mode regime and excellent heat dissipation, thus leading to high laser reliability and long-term stability. The realization of devices based on this technology requires an active medium with high optical gain over a short length to increase efficiency while mitigating nonlinear optical effects. Multicomponent phosphate glasses meet these requirements thanks to the high solubility of rare-earth ions in their glass matrix, alongside with high emission cross-sections, chemical stability and high optical damage threshold. In this paper, we review recent advances in the field thanks to the combination of highly-doped phosphate glasses and innovative fiber drawing techniques. We also present the main performance achievements and outlook both in continuous wave (CW and pulsed mode regimes.

Crumpled Nitrogen-Doped Graphene for Supercapacitors with High Gravimetric and Volumetric Performances.

Science.gov (United States)

Wang, Jie; Ding, Bing; Xu, Yunling; Shen, Laifa; Dou, Hui; Zhang, Xiaogang

2015-10-14

Graphene is considered a promising electrochemical capacitors electrode material due to its high surface area and high electrical conductivity. However, restacking interactions between graphene nanosheets significantly decrease the ion-accessible surface area and impede electronic and ionic transfer. This would, in turn, severely hinder the realization of high energy density. Herein, we report a strategy for preparation of few-layer graphene material with abundant crumples and high-level nitrogen doping. The two-dimensional graphene nanosheets (CNG) feature high ion-available surface area, excellent electronic and ion transfer properties, and high packing density, permitting the CNG electrode to exhibit excellent electrochemical performance. In ionic liquid electrolyte, the CNG electrode exhibits gravimetric and volumetric capacitances of 128 F g(-1) and 98 F cm(-3), respectively, achieving gravimetric and volumetric energy densities of 56 Wh kg(-1) and 43 Wh L(-1). The preparation strategy described here provides a new approach for developing a graphene-based supercapacitor with high gravimetric and volumetric energy densities.

Fuel cells with doped lanthanum gallate electrolyte

Science.gov (United States)

Feng, Man; Goodenough, John B.; Huang, Keqin; Milliken, Christopher

Single cells with doped lanthanum gallate electrolyte material were constructed and tested from 600 to 800°C. Both ceria and the electrolyte material were mixed with NiO powder respectively to form composite anodes. Doped lanthanum cobaltite was used exclusively as the cathode material. While high power density from the solid oxide fuel cells at 800°C was achieved. our results clearly indicate that anode overpotential is the dominant factor in the power loss of the cells. Better anode materials and anode processing methods need to be found to fully utilize the high ionic conductivity of the doped lanthanum galiate and achieve higher power density at 800°C from solid oxide fuel cells.

Fuel cells with doped lanthanum gallate electrolyte

Energy Technology Data Exchange (ETDEWEB)

Feng Man [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Goodenough, J.B. [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Huang Keqin [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Milliken, C. [Cerematec, Inc., Salt Lake City, UT (United States)

1996-11-01

Single cells with doped lanthanum gallate electrolyte material were constructed and tested from 600 to 800 C. Both ceria and the electrolyte material were mixed with NiO powder respectively to form composite anodes. Doped lanthanum cobaltite was used exclusively as the cathode material. While high power density from the solid oxide fuel cells at 800 C was achieved, our results clearly indicate that anode overpotential is the dominant factor in the power loss of the cells. Better anode materials and anode processing methods need to be found to fully utilize the high ionic conductivity of the doped lanthanum gallate and achieve higher power density at 800 C from solid oxide fuel cells. (orig.)

High field magnetic behavior in Boron doped Fe{sub 2}VAl Heusler alloys

Energy Technology Data Exchange (ETDEWEB)

Venkatesh, Ch., E-mail: venkyphysicsiitm@gmail.com [Department of Physics, Indian Institute of Technology, Kharagpur (India); DCMP & MS, Tata Institute of Fundamental Research, Mumbai (India); Vasundhara, M., E-mail: vasu.mutta@gmail.com [Materials Science and Technology Division, National Institute for Interdisciplinary Science and Technology, CSIR, Trivandrum 695019 (India); Srinivas, V. [Department of Physics, Indian Institute of Technology, Chennai (India); Rao, V.V. [Cryogenic Engineering Centre, Indian Institute of Technology, Kharagpur (India)

2016-11-15

We have investigated the magnetic behavior of Fe{sub 2}VAl{sub 1−x}B{sub x} (x=0, 0.03, 0.06 and 0.1) alloys under high temperature and high magnetic field conditions separately. Although, the low temperature DC magnetization data for the alloys above x>0 show clear magnetic transitions, the zero field cooled (ZFC) and field cooled (FC) curves indicate the presence of spin cluster like features. Further, critical exponent (γ) deduced from the initial susceptibility above the T{sub c}, does not agree with standard models derived for 3 dimensional long range magnetic systems. The deviation in γ values are consistent with the short range magnetic nature of these alloys. We further extend the analysis of magnetic behavior by carrying the magnetization measurements at high temperatures and high magnetic fields distinctly. We mainly emphasize the following observations; (i) The magnetic hysteresis loops show sharp upturns at lower fields even at 900 K for all the alloys. (ii) High temperature inverse susceptibility do not overlap until T=900 K, indicating the persistent short range magnetic correlations even at high temperatures. (iii) The Arrott's plot of magnetization data shows spontaneous moment (M{sub S}) for the x=0 alloy at higher magnetic fields which is absent at lower fields (<50 kOe), while the Boron doped samples show feeble M{sub S} at lower fields. The origin of this short range correlation is due to presence of dilute magnetic heterogeneous phases which are not detected from the X-ray diffraction method. - Highlights: • Short range magnetic character has been confirmed by the critical exponents analysis. • Magnetoresistace is about −14% with non-saturating tendency even at 150 kOe for Fe{sub 2}VAl alloy. • Boron doped Fe{sub 2}VAl alloys show a weak magnetism even at T=900 K.

Interim results: fines recycle testing using the 4-inch diameter primary graphite burner

International Nuclear Information System (INIS)

Palmer, W.B.

1975-05-01

The results of twenty-two HTGR primary burner runs in which graphite fines were recycled pneumatically to the 4-inch diameter pilot-plant primary fluidized-bed burner are described. The result of the tests showed that zero fines accumulation can easily be achieved while operating at plant equivalent burn rates. (U.S.)

Hormones as doping in sports.

Science.gov (United States)

Duntas, Leonidas H; Popovic, Vera

2013-04-01

Though we may still sing today, as did Pindar in his eighth Olympian Victory Ode, "… of no contest greater than Olympia, Mother of Games, gold-wreathed Olympia…", we must sadly admit that today, besides blatant over-commercialization, there is no more ominous threat to the Olympic games than doping. Drug-use methods are steadily becoming more sophisticated and ever harder to detect, increasingly demanding the use of complex analytical procedures of biotechnology and molecular medicine. Special emphasis is thus given to anabolic androgenic steroids, recombinant growth hormone and erythropoietin as well as to gene doping, the newly developed mode of hormones abuse which, for its detection, necessitates high-tech methodology but also multidisciplinary individual measures incorporating educational and psychological methods. In this Olympic year, the present review offers an update on the current technologically advanced endocrine methods of doping while outlining the latest procedures applied-including both the successes and pitfalls of proteomics and metabolomics-to detect doping while contributing to combating this scourge.

Intended or Unintended Doping? A Review of the Presence of Doping Substances in Dietary Supplements Used in Sports.

Science.gov (United States)

Martínez-Sanz, José Miguel; Sospedra, Isabel; Ortiz, Christian Mañas; Baladía, Eduard; Gil-Izquierdo, Angel; Ortiz-Moncada, Rocio

2017-10-04

The use of dietary supplements is increasing among athletes, year after year. Related to the high rates of use, unintentional doping occurs. Unintentional doping refers to positive anti-doping tests due to the use of any supplement containing unlisted substances banned by anti-doping regulations and organizations, such as the World Anti-Doping Agency (WADA). The objective of this review is to summarize the presence of unlabeled doping substances in dietary supplements that are used in sports. A review of substances/metabolites/markers banned by WADA in ergonutritional supplements was completed using PubMed. The inclusion criteria were studies published up until September 2017, which analyzed the content of substances, metabolites and markers banned by WADA. 446 studies were identified, 23 of which fulfilled all the inclusion criteria. In most of the studies, the purpose was to identify doping substances in dietary supplements. Substances prohibited by WADA were found in most of the supplements analyzed in this review. Some of them were prohormones and/or stimulants. With rates of contamination between 12 and 58%, non-intentional doping is a point to take into account before establishing a supplementation program. Athletes and coaches must be aware of the problems related to the use of any contaminated supplement and should pay special attention before choosing a supplement, informing themselves fully and confirming the guarantees offered by the supplement.

Rational hybrid modulation of P, N dual-doped holey graphene for high-performance supercapacitors

Science.gov (United States)

Nazarian-Samani, Masoud; Haghighat-Shishavan, Safa; Nazarian-Samani, Mahboobeh; Kim, Myeong-Seong; Cho, Byung-Won; Oh, Si-Hyoung; Kashani-Bozorg, Seyed Farshid; Kim, Kwang-Bum

2017-12-01

A P, N dual-doped holey graphene (PNHG) material is prepared by a scalable, facile synthetic approach, using a mixture of glucose, dicyandiamide (DCDA), and phosphoric acid (H3PO4). H3PO4 successfully functions as an "acid catalyst" to encourage the uniform breakage of C=C bonds to create large, localized perforations over the graphene monolith. Further acid treatment and annealing introduce in-plane holes. The correlation between the capacitance of the PNHG and its structural parameters during the fabrication process is comprehensively evaluated. A thermally induced sp2→sp3 transformation occurs at high temperatures because of the substantial loss of graphitic sp2-type carbons, together with a dramatic reduction in capacitance. The target PNHG-400 electrode material delivers exceptionally high gravimetric capacitance (235.5 F g-1 at 0.5 A g-1), remarkable rate capability (84.8% at 70 A g-1), superior capacitance retention (93.2 and 92.7% at 10 and 50 A g-1 over 25000 cycles, respectively), and acceptable volumetric capacitance due to moderate density, when it is used with organic electrolytes in the voltage range between 0 and 3 V. These results suggest a pioneering defect-engineered strategy to fabricate dual-doped holey graphene with valuable structural properties for high-performance electric double layer supercapacitors, which could be used in next-generation energy storage applications.

Anomalous behavior of B1g mode in highly transparent anatase nano-crystalline Nb-doped Titanium Dioxide (NTO thin films

Directory of Open Access Journals (Sweden)

Subodh K. Gautam

2015-12-01

Full Text Available The effect of Niobium doping and size of crystallites on highly transparent nano-crystalline Niobium doped Titanium Dioxide (NTO thin films with stable anatase phase are reported. The Nb doping concentration is varied within the solubility limit in TiO2 lattice. Films were annealed in controlled environment for improving the crystallinity and size of crystallites. Elemental and thickness analysis were carried out using Rutherford backscattering spectrometry and cross sectional field emission scanning electron microscopy. Structural characteristics reveal a substitutional incorporation of Nb+5 in the TiO2 lattice which inhibits the anatase crystallites growth with increasing the doping percentage. The micro-Raman (MR spectra of films with small size crystallites shows stiffening of about 4 cm−1 for the Eg(1 mode and is ascribed to phonon confinement and non-stoichiometry. In contrast, B1g mode exhibits a large anomalous softening of 20 cm−1 with asymmetrical broadening; which was not reported for the case of pure TiO2 crystallites. This anomalous behaviour is explained by contraction of the apical Ti-O bonds at the surface upon substitutional Nb5+ doping induced reduction of Ti4+ ions also known as hetero-coordination effect. The proposed hypotheses is manifested through studying the electronic structure and phonon dynamics by performing the near edge x-ray absorption fine structure (NEXAFS and temperature dependent MR down to liquid nitrogen temperature on pure and 2.5 at.% doped NTO films, respectively.

Improvement of high-frequency characteristics of Z-type hexaferrite by dysprosium doping

International Nuclear Information System (INIS)

Mu Chunhong; Liu Yingli; Song Yuanqiang; Wang Liguo; Zhang Huaiwu

2011-01-01

Z-type hexaferrite has great potential applications as anti-EMI material for magnetic devices in the GHz region. In this work, Dy-doped Z-type hexaferrites with nominal stoichiometry of Ba 3 Co 2 Dy x Fe 24-x O 41 (x 0.0, 0.05, 0.5, 1.0) were prepared by an improved solid-state reaction method. The effects of rare earth oxide (Dy 2 O 3 ) addition on the phase composition, microstructure and electromagnetic properties of the ceramics were investigated. Structure and micromorphology characterizations indicate that certain content of Dy doping will cause the emergence of the second phase Dy 3 Fe 5 O 12 at the grain boundaries of the majority phase Z-type hexaferrite, due to which the straightforward result is the grain refinement during the successive sintering process. Permeability spectra measurements show that the initial permeability reaches its maximum of 17 at 300 MHz with x = 0.5, while the cutoff frequency keeps above 800 MHz. The apparent specific anisotropy field H K of Dy-doped Z-type hexaferrites decreases with x increasing. The relationships among phase composition, grain size, permeability spectra, and anisotropy are theoretically investigated, and according to the analysis, Dy doping effects on its magnetic properties can be well explained and understood.

Potassium-doped copper oxide nanoparticles synthesized by a solvothermal method as an anode material for high-performance lithium ion secondary battery

Energy Technology Data Exchange (ETDEWEB)

Thi, Trang Vu; Rai, Alok Kumar; Gim, Jihyeon; Kim, Jaekook, E-mail: jaekook@chonnam.ac.kr

2014-06-01

A simple and efficient approach was developed to synthesize CuO nanoparticles with improved electrochemical performance. Potassium (K{sup +})-doped CuO nanoparticles were synthesized by a simple and cost-effective solvothermal method followed by annealing at 500 °C for 5 h under air atmosphere. For comparison, an undoped CuO sample was also synthesized under the same conditions. X-ray diffraction analysis demonstrates that the K{sup +} ion doping caused no change in the phase structure, and highly crystalline K{sub x}Cu{sub 1−x}O{sub 1−δ} (x = 0.10) powder without any impurity was obtained. As an anode material for a lithium ion battery, the K{sup +}-doped CuO nanoparticle electrode exhibited better capacity retention with a reversible capacity of over 354.6 mA h g{sup −1} for up to 30 cycles at 0.1 C, as well as a high charge capacity of 162.3 mA h g{sup −1} at a high current rate of 3.2 C, in comparison to an undoped CuO electrode (275.9 mA h g{sup −1} at 0.1 C and 68.9 mA h g{sup −1} at 3.2 C). The high rate capability and better cycleability of the doped electrode can be attributed to the influence of the K{sup +} ion nanostructure on the increased electronic conductivity, diffusion efficiency, and kinetic properties of CuO during the lithiation and delithiation process.

High-rate and ultralong cycle-life LiFePO_4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

International Nuclear Information System (INIS)

Feng, Jinpeng; Wang, Youlan

2016-01-01

Highlights: • B-doped carbon decorated LiFePO_4 has been fabricated for the first time. • The LiFePO_4@B-CdisplaysimprovedbatteryperformancecomparedtoLiFePO_4@C. • The LiFePO_4@B-C is good candidate for high-performance lithium-ion batteries. - Abstract: An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO_4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO_4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO_4@B_0_._4-C can reach 164.1 mAh g"−"1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g"−"1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g"−"1 and can be maintained at 124.5 mAh g"−"1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO_4@B-C composite for high-performance lithium-ion batteries.

Erbium-doped integrated waveguide amplifiers and lasers

NARCIS (Netherlands)

Bradley, J.; Pollnau, Markus

Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5–1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul

Implicit versus explicit attitude to doping: Which better predicts athletes' vigilance towards unintentional doping?

Science.gov (United States)

Chan, Derwin King Chung; Keatley, David A; Tang, Tracy C W; Dimmock, James A; Hagger, Martin S

2018-03-01

This preliminary study examined whether implicit doping attitude, explicit doping attitude, or both, predicted athletes' vigilance towards unintentional doping. A cross-sectional correlational design. Australian athletes (N=143;M age =18.13, SD=4.63) completed measures of implicit doping attitude (brief single-category implicit association test), explicit doping attitude (Performance Enhancement Attitude Scale), avoidance of unintentional doping (Self-Reported Treatment Adherence Scale), and behavioural vigilance task of unintentional doping (reading the ingredients of an unfamiliar food product). Positive implicit doping attitude and explicit doping attitude were negatively related to athletes' likelihood of reading the ingredients table of an unfamiliar food product, and positively related to athletes' vigilance towards unintentional doping. Neither attitude measures predicted avoidance of unintentional doping. Overall, the magnitude of associations by implicit doping attitude appeared to be stronger than that of explicit doping attitude. Athletes with positive implicit and explicit doping attitudes were less likely to read the ingredients table of an unknown food product, but were more likely to be aware of the possible presence of banned substances in a certain food product. Implicit doping attitude appeared to explain athletes' behavioural response to the avoidance of unintentional doping beyond variance explained by explicit doping attitude. Copyright © 2017 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

Investigation of the properties of carbon-base nanostructures doped YBa_2Cu_3O_7_−_δ high temperature superconductor

International Nuclear Information System (INIS)

Dadras, Sedigheh; Ghavamipour, Mahshid

2016-01-01

In this research, we have investigated the effects of three samples of carbon-base nanostructures (carbon nanoparticles, carbon nanotubes and silicon carbide nanoparticles) doping on the properties of Y_1Ba_2Cu_3O_7_−_δ (YBCO) high temperature superconductor. The pure and doped YBCO samples were synthesized by sol–gel method and characterized by resistivity versus temperature (ρ–T), current versus voltage (I–V), through X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. The results confirmed that for all the samples, the orthorhombic phase of YBCO compound is formed. We found that the pinning energy and critical current density of samples increase by adding carbon nanostructures to YBCO compound. Also critical temperature is improved by adding carbon nanotubes to YBCO compound, while it does not change much for carbon and silicon carbide nanoparticles doped compounds. Furthermore, the samples were characterized by UV–vis spectroscopy in 300 K and the band gap of the samples was determined. We found that the carbon nanotubes doping decreases YBCO band gap in normal state from 1.90 eV to 1.68 eV, while carbon and SiC nanoparticles doping increases it to 2.20 and 3.37 eV respectively.

Low-Temperature Sol-Gel Synthesis of Nitrogen-Doped Anatase/Brookite Biphasic Nanoparticles with High Surface Area and Visible-Light Performance

Directory of Open Access Journals (Sweden)

Liang Jiang

2017-12-01

Full Text Available Nitrogen doping in combination with the brookite phase or a mixture of TiO2 polymorphs nanomaterials can enhance photocatalytic activity under visible light. Generally, nitrogen-dopedanatase/brookite mixed phases TiO2 nanoparticles obtained by hydrothermal or solvothermal method need to be at high temperature and with long time heating treatment. Furthermore, the surface areas of them are low (<125 m2/g. There is hardly a report on the simple and direct preparation of N-doped anatase/brookite mixed phase TiO2 nanostructures using sol-gel method at low heating temperature. In this paper, the nitrogen-doped anatase/brookite biphasic nanoparticles with large surface area (240 m2/g were successfully prepared using sol-gel method at low temperature (165 °C, and with short heating time (4 h under autogenous pressure. The obtained sample without subsequent annealing at elevated temperatures showed enhanced photocatalytic efficiency for the degradation of methyl orange (MO with 4.2-, 9.6-, and 7.5-fold visible light activities compared to P25 and the amorphous samples heated in muffle furnace with air or in tube furnace with a flow of nitrogen at 165 °C, respectively. This result was attributed to the synergistic effects of nitrogen doping, mixed crystalline phases, and high surface area.

Current Status of Doping in Japan Based on Japan Anti-Doping Disciplinary Panels of the Japan Anti-Doping Agency (JADA): A Suggestion on Anti-Doping Activities by Pharmacists in Japan.

Science.gov (United States)

Imanishi, Takashi; Kawabata, Takayoshi; Takayama, Akira

2017-01-01

In 2009, the Japan Anti-Doping Agency (JADA) established the "Sports Pharmacist Accreditation Program" to prevent doping in sports. Since then, anti-doping activities in Japan have been attracting attention. In this study, we investigated research about the current status of doping from 2007 to 2014 in Japan to make anti-doping activities more concrete, and we also discussed future anti-doping activities by pharmacists. In Japan, bodybuilding was the sporting event with the highest number and rate of doping from 2007 to 2014. Many of the positive doping cases were detected for class S1 (anabolic agents), S5 (diuretics and masking agents), and S6 (stimulants). Within class S1, supplements were the main cause of positive doping. Within class S5, medicines prescribed by medical doctors were the main cause of positive doping. Within class S6, non-prescription medicines (e.g., OTC) were the main cause of positive doping. When we looked at the global statistics on doping, many of the positive doping cases were detected for class S1. On comparing the Japanese statistics with the global statistics, the rate of positive doping caused by class S1 was significantly lower, but that caused by classes S5 and S6 was significantly higher in Japan than in the world. In conclusion, pharmacists in Japan should pay attention to class S1, S5, and S6 prohibited substances and to the sport events of bodybuilding. Based on this study, sports pharmacists as well as common pharmacists should suggest new anti-doping activities to prevent doping in the future.

Modulation doping and delta doping of III-V compound semiconductors

NARCIS (Netherlands)

Hendriks, P.; Zwaal, E.A.E.; Haverkort, J.E.M.; Wolter, J.H.; Razeghi, M.

1991-01-01

The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and

Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications

Energy Technology Data Exchange (ETDEWEB)

Kumar, Vinod, E-mail: vinod.phy@gmail.com [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Physics, Gurukula Kangri University, Haridwar 249404 (India); Singh, R.G. [Department of Electronic Science, Maharaja Agrasen College University of Delhi, New Delhi 110096 (India); Singh, Fouran [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Purohit, L.P. [Department of Physics, Gurukula Kangri University, Haridwar 249404 (India)

2012-12-15

Highlights: Black-Right-Pointing-Pointer Synthesis of Boron doped ZnO (ZnO:B) films. Black-Right-Pointing-Pointer Minimum of resistivity is observed to be 7.9 Multiplication-Sign 10{sup -4} {Omega} cm. Black-Right-Pointing-Pointer Maximum transmittance {approx}91% for 450 Degree-Sign C annealed films. Black-Right-Pointing-Pointer Applicable for window materials in Dye Sensitized Solar Cell. - Abstract: Highly transparent and conducting boron doped zinc oxide (ZnO:B) films grown by sol-gel method are reported. The annealing temperature is varied from 350 to 550 Degree-Sign C and doping concentration of boron is kept fixed for 0.6 at.% for all the films. At low temperature the stress in the films is compressive, which becomes tensile for the films annealed at higher temperature. A minimum resistivity of 7.9 Multiplication-Sign 10{sup -4} {Omega} cm and maximum transmittance of {approx}91% are observed for the film annealed at 450 Degree-Sign C. This could be attributed to minimum stress of films, which is further evident by the evolution of A{sub 1} and defect related Raman modes without any shifting in its position. Such kind of highly transparent and conducting ZnO:B thin film could be used as window material in Dye Sensitized Solar Cell (DSSC).

Effect of paramagnetic manganese ions doping on frequency and high temperature dependence dielectric response of layered Na1.9Li0.1Ti3O7 ceramics

International Nuclear Information System (INIS)

Pal, Dharmendra; Pandey, J.L.

2010-01-01

The manganese doped layered ceramic samples (Na 1.9 Li 0.1 )Ti 3 O 7 : XMn (0.01 ≤ X ≤ 0.1) have been prepared using high temperature solid state reaction. The room temperature electron paramagnetic resonance (EPR) investigations exhibit that at lower percentage of doping the substitution of manganese ions occur as Mn 3+ at Ti 4+ sites, whereas for higher percentage of doping Mn 2+ ions occupy the two different interlayer sodium/lithium sites. In both cases, the charge compensation mechanism should operate to maintain the overall charge neutrality of the lattice. The manganese doped derivatives of layered Na 1.9 Li 0. 1Ti 3 O 7 (SLT) ceramics have been investigated through frequency dependence dielectric spectroscopy in this work. The results indicate that the dielectric losses in these ceramics are the collective contribution of electric conduction, dipole orientation and space charge polarization. Smeared peaks in temperature dependence of permittivity plots suggest diffuse nature of high temperature ferroelectric phase transition. The light manganese doping in SLT enhances the dielectric constant. However, manganese doping decreases dielectric loss due to inhibition of domain wall motion, enhances electron-hopping conduction, and impedes the interlayer ionic conduction as well. Manganese doping also gives rise to contraction of interlayer space. (author)

Effect of light rare earth doping in 123 high temperature supercoductors

Directory of Open Access Journals (Sweden)

M. Mirzadeh

2006-09-01

Full Text Available   We have studied the structural and electrical properties of Gd(Ba2-xLaxCu3O7+δ [Gd(BaLa123], Gd(Ba2-xNdxCu3O7+δ [Gd(BaNd123], and Nd(Ba2-xPrxCu3O7+δ [Nd(BaPr123] compounds with 0.0≤x≤0.8 prepared by the standard solid-state reaction. The XRD patterns show that all of the samples with x≤0.5 are isosructure 123 phase, but in Gd(BaNd123 and Nd(BaPr123 there are several impurity peaks in the XRD patterns for x≥0.6. We estimated the xcsolubility=1.1, 0.6 and 0.55 in Gd(BaLa123, Nd(BaPr123, and Gd(BaNd123, respectively. The resistivity increases with the increase of doping. The decrease of Tc with the increase of Pr doping is faster than Nd and La doping. The normal-state resistivity is fitted for two and three dimensional variable range hopping (2D&amp3D-VRH and Coulomb gap (CG regimes, separately. Our results indicate that the dominant mechanism for x≥xcSIT is 3D-VRH. The broadening of magnetoresistance have been investigated by TAFC and AH models. The pinning energy and Josephson coupling energy, decrease with the increase of applied magnetic field as U~H-β, these values also decrease with doping concentration Pr is more effective than Nd and La.

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Science.gov (United States)

Demir, Ilkay; Altuntas, Ismail; Bulut, Baris; Ezzedini, Maher; Ergun, Yuksel; Elagoz, Sezai

2018-05-01

We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 × 1019 cm‑3 carrier concentration and 1530 cm2 V‑1 s‑1 mobility.

Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

International Nuclear Information System (INIS)

Zhou Shu-Xing; Qi Ming; Ai Li-Kun; Xu An-Huai; Wang Li-Dan; Ding Peng; Jin Zhi

2015-01-01

The InGaAs/InAlAs/InP high electron mobility transistor (HEMT) structures with lattice-matched and pseudomorphic channels are grown by gas source molecular beam epitaxy. Effects of Si δ-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si δ-doping concentration (N_d) is about 5.0 × 10"1"2 cm"−"2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission electron microscopy. An InGaAs/InAlAs/InP HEMT device with a gate length of 100 nm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits f_T = 249 GHz and f_m_a_x > 400 GHz. (paper)