Energy Technology Data Exchange (ETDEWEB)

Objective: To evaluate technical feasibility and acute and subacute radiotolerance of a self-expandable stent loaded with {sup 125}I seeds in the rabbit esophagus. Methods: A self-expandable stent designed for esophageal application was made of 0.16 mm nitinol wire and loaded with {sup 125}I seeds (CIAE-6711). Twenty-seven stents with three different radioactive dosages (n = 9 in each dosage group) were implanted in the esophagus of healthy rabbits, while nine stents alone were used as controls. The stents were perorally deployed into the esophagus under fluoroscopic guidance. Radiological follow-up included plain chest film, CT scan, and barium esophagography which were undertaken in all rabbits of each group at 2, 4, and 8 weeks, respectively, which were correlated to histopathological findings. The stented esophageal segments along with their adjacent tissues were harvested for histopathological examinations. Results: ...

UK PubMed Central (United Kingdom)

The protocols presently established for optimum seed storage do not account for the chemical composition of different seed species, the physiological status of the seed, and the physical status of water...Full Text Available

KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

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International Nuclear Information System (INIS)

In this paper, we put forward a systematic method to analyze, control and evaluate the safety issues of medical robotics. We created a safety model that consists of three axes to analyze safety factors. Software and hardware are the two material axes. The third axis is the policy that controls all phases of design, production, testing and application of the robot system. The policy was defined as hazard identification and safety insurance control (HISIC) that includes seven principles: definitions and requirements, hazard identification, safety insurance control, safety critical limits, monitoring and control, verification and validation, system log and documentation. HISIC was implemented in the development of a robot for urological applications that was known as URObot. The URObot is a universal robot with different modules adaptable for 3D ultrasound image-guided interstitial laser coagulation, radiation seed implantation, laser resection, ...

CERN Document Server

Control of Phosphorus Transient Enhanced Diffusion using Co-implantation

International Nuclear Information System (INIS)

As there are many efforts devoted in order to manage the cancer, here the researcher handle one of these efforts that play a major part in treating the cancer internationally, it is a brachytherapy system. Brachytherapy was carried out mostly with radium sources, but recently some artificial sources are incorporated in this mode of treatment such as Cs-137, Ir-192, Au-198, P-32, Sr-90 and I-125. The research cover history of brachytherapy and radioactive sources used in, techniques of implementation, radiation protection and methods of brachytherapy dose calculation, as well as brachytherapy in radiation and isotopes centre in Khartoum.

British Library Electronic Table of Contents (United Kingdom)

Aim.- To describe the clinical aspects of implantable cardioverter defibrillators care in Sweden with focus on organisation, the role and education of nurses, patient information and education and areas in need of improvement. Background.- Implantable cardioverter defibrillators implantations have developed rapidly in recent years and are now an established arrhythmia treatment. The expanding indication for implantable cardioverter defibrillators implantation demands new competencies and resources in the implantable cardioverter defibrillators team members. Methods.- Participants were recruited among physicians and nurses in all of the hospitals implanting implantable cardioverter defibrillators (n-=-16). Data were collected by a questionnaire. Additionally, all written educational materia...

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Energy Technology Data Exchange (ETDEWEB)

Magnetic separation of several classes of antibiotics was investigated using electrochemical magnetic seeding. Electrocoagulation with a sacrificial anode followed by addition of magnetite particles was applied for the magnetic seeding of antibiotics. With electrochemical magnetic seeding using an iron anode, tetracycline antibiotics (oxytetracycline, chlortetracycline, doxycycline and tetracycline) and cephalosporin antibiotic (cefdinir) were rapidly removed from synthetic wastewater by magnetic separation using a neodymium magnet. Iron and aluminium anodes were suitable for magnetic seeding of the antibiotics. The results indicated that the ability of antibiotics to form strong complex with iron and aluminium allowed the higher removal by magnetic separation. This method would be appropriate for rapid treatment of antibiotics in wastewater.

Science.gov (United States)

PMID:4317460

International Nuclear Information System (INIS)

Tunable output wavelength is an important character of a free electron laser (FEL). As generally understood, to alter the wavelength of a high-gain harmonic generation (HGHG) FEL laser, the seed laser must be tunable. A few-cycle, high intensity laser obtained by optical compression usually has pretty broad bandwidth in the spectral domain, which can be used as the seed laser of a HGHG and may open the possibility to approach a HGHG scheme with fully tunable wavelength. In this paper, a HGHG FEL seeded by a few-cycle laser is theoretically discussed and numerically investigated. A few-cycle seed laser significantly influences HGHG FEL performance, especially in output wavelength tuning. For a HGHG FEL seeded by a 4-cycle 786 nm laser, output wavelength tunability range up to 14.9% of the central wavelength 262 nm is observed by adjusting the resonant condition.

International Nuclear Information System (INIS)

Two no-carrier-added "1"2"5I-labelled photoaffinity rapamycin analogs were prepared: 7-demethoxy-7-(4-azido-3-"1"2"5I-benzyloxy) rapamycin and its C_2_8-C_2_9 seco analog. The key reactions of the synthesis were substitution of the C_7 methoxyl of rapamycin with 4-azido-3-tributylstannylbenzyloxy group, exchange of tributyltin with "1"2"5I using Na"1"2"5I and Chloramine-T, and a ZnCl_2 mediated retro-Aldol cleavage of the C_2_8-C_2_9 bond of rapamycin. (author).

UK PubMed Central (United Kingdom)

The mechanisms controlling seed dormancy in Arabidopsis (Arabidopsis thaliana) have been characterized by proteomics using the dormant (D) accession Cvi originating from the Cape Verde...Full Text Available

UK PubMed Central (United Kingdom)

Cytological observations were made on developing seeds of soybean (Glycine max (L.) Merr. “Amsoy 71”) using scanning and transmission electron microscopy and light microscopy....Full Text Available

UK PubMed Central (United Kingdom)

Transitions at 28-32°C in membranes of many kinds of seeds influence their germination and subsequent growth. Changes at 28-32°C in the rates of loss of endogenous amino acids from imbibed...Full Text Available

UK PubMed Central (United Kingdom)

We show that the expression of an indole-3-acetic acid (IAA)-modified protein from bean seed, IAP1, is correlated to the developmental period of rapid growth during seed development. Moreover, this...Full Text Available

International Nuclear Information System (INIS)

... chemical radiation effects decomposition extraction columns gamma radiation

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

UK PubMed Central (United Kingdom)

Rice (Oryza sativa) seed storage proteins (SSPs) are synthesized and deposited in storage organelles in the endosperm during seed maturation as a nitrogen source for germinating seedlings....Full Text Available

International Nuclear Information System (INIS)

The purpose of this work was to develop a high specific activity radioiodinated cell membrane probe for tracking lymphocytes in-vivo to replace the nucleus localizing, cytotoxic lipophilic chelates (In-111 oxine and Tc-99m HMPAO) currently used. Alkylation of parent dye 4-[2-[-N,N-didecylamino]phenyl]ethenyl pyridine with E-1-tributylstannyl-3-tosylpropene (prepared form E-1-tributylstannyl-1-propene-3-ol), gave a tributyltin precursor 1. Radiolabeled 3-[4-[2-[4-(N,N-didecylamino)phenyl]ethenyl]pyridino] E-[I-125]-1-iodopropene (2), was prepared from 1 using peracetic acid in acetonitrile/water. Labeling yields and specific activities achieved were 26% (#approx#2170 Ci/mmol), 40% (1220 Ci/mmol), and 55% (200 Ci/mmol) for nca, 0.4, and 2 nanomole carrier iodide runs respectively. Canine mixed leukocytes (0.5-1.0 x 10"8 cells) were labeled with 2 (67% and 42% yields for 200 Ci/mol and 1220 Ci/mmol preparations) and showed blood clearance similar ...

Science.gov (United States)

Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. Various diagnostic techniques were used to assess the structural and electronic properties of these crystals in their as-implante...

UK PubMed Central (United Kingdom)

Purpose:To provide a literature review of implant related complications from bilateral NewColorIris implantation (Kahn Medical Devices, Panama City, Panama).Methods:A...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

Effects of avian gut-passage on seed germination are important to assess the effectiveness of frugivores in woodland regeneration, particularly in biodiversity hotspots that have a high incidence of avian frugivory. We examined the effect of avian gut-passage on seed germination in contrast to seeds that remain uneaten in five shrub species in Mediterranean central Chile and sought to determine the physiological mechanism(s) by which seed germinability is modified. Germination assays were conducted in a glasshouse for five common shrub species of the sub-Andean matorral: Azara dentata (Flacourtiaceae), Schinus polygamus and Schinus molle (Anacardiaceae), Cestrum parqui (Solanaceae), and Maytenus boaria (Celastraceae). We estimated germinability (final percent germination), dormancy length ...

UK PubMed Central (United Kingdom)

BackgroundTitanium and titanium alloys are widely used for fabrication of dental implants. Since the material composition and the surface topography of a biomaterial play a fundamental...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundOsseointegration is crucial for the long-term success of dental implants and depends on the tissue reaction at the tissue-implant interface. Mechanical properties and biocompatibility...Full Text Available

International Nuclear Information System (INIS)

The present investigation was conducted at Ismaillia Research Station-Agricultural Research Center, Ismaillia Governorate, during the two successive seasons of 2000 and 2001. Two varieties of peanut (Arachis hypogaea L) namely Giza 4 and Giza 5 were treated with gamma ray doses; 10,15, 20, 25 Kr in order to induce genetic variability and to study the importance of the relative contribution of peanut yield components by employing some statistical procedures, i.e. simple correlation, multiple linear regression and stepwise regression analysis. The results showed that, there was significant positive correlation between seed yield/plant and no. of pods/plant, 100 seed weight, shelling percentage and pod yield/plant, and there was significant positive correlation between pod yield/plant and no of seed/plant,100 pod weight and 100 seed weight. The multiple linear regression analysis clearly showed that the ...

KoreaScience (Korea)

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International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

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British Library Electronic Table of Contents (United Kingdom)

Statement of problem Porcelain fracture associated with an implant-supported, metal ceramic crown or fixed partial denture occurs at a higher rate than in tooth-supported restorations, according to the literature. Implant-specific and patient-specific causes of ceramic failure have not been fully evaluated. Purpose The purpose of this retrospective study was to evaluate the potential statistical predictors for porcelain fracture of implant-supported, metal ceramic restorations. Material and Methods Over a 6-month period, a consecutive series of patients having previously received implant-supported, metal ceramic fixed restorations were examined during periodic recall appointments. The number of supporting implants, number of dental units, type of restoration, date of prosthesis insertion, ...

Energy Technology Data Exchange (ETDEWEB)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted ...

Energy Technology Data Exchange (ETDEWEB)

High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.

International Nuclear Information System (INIS)

In developing new Tc-99m brain perfusion imaging agents for SPECT, a series of BAT (bis-aminoethanethiol) derivatives was prepared. These N/sub 2/S/sub 2/ ligands formed stable and neutral complexes with reduced Tc-99m, either by Sn(II)-PPi or sodium borohydride reduction. The purity of the Tc-99m complexes was >95% (HPLC reverse-phase column, acetonitrile: pH 7.0 buffer, 85:15). The biodistribution in rats was evaluated using I-125 iodoantipyrine (IAP), a free diffusible tracer, as the internal reference. Compounds with a free hydroxyl group (I and IV) showed lower brain uptake, inspite of high P.C.; this may be related to in vivo instability of the complexes. High initial brain uptake was observed for three compounds (II, III and V), however, only compound V (P.C.=384) showed significant brain retention. Planar imaging with compound V in a monkey demonstrated that the compound localized in brain and the retention time was T/sub 1/2/=35 ...

British Library Electronic Table of Contents (United Kingdom)

The extracts from kinnow peel, kinnow seeds, litchi pericarp, litchi seeds, grape seeds, and banana peel were screened for total phenolic content (TPC), trolox equivalent antioxidant capacity (TEAC), 1,1 diphenyl-2-picryl hydrazyl (DPPH) radical scavenging activity, as well as reducing power. Kinnow peel extract exhibited the highest reducing power, TEAC, and DPPH free radical scavenging activity, whereas, the phenolic content of 37.4 mg GAE/g-dw was highest for grape seed extract. Banana peel extract with a low TPC showed the lowest reducing power, TEAC as well as DPPH free radical scavenging activity among the fruit residue extracts examined in the present study. Correlation analysis between the reducing power and DPPH radical scavenging ability; reducing power and ABTS radical scavengin...

International Nuclear Information System (INIS)

In order to get fully coherent radiation from the Free Electron Laser (FEL) amplifier starting from the shot noise, it is foreseen to implement a seeding option into the VUV FEL being under construction at DESY (DESY print TESLA-FEL 95-03, Hamburg, DESY, 1995, Seeding option for the VUV free electron laser at DESY: joint DESY and GKSS proposal; Available at DESY upon request only). It consists of an additional undulator, a bypass for electrons and an X-ray monochromator. This paper presents the results of optimization of the seeding option for the VUV FEL providing maximal spectral brightness at minimal shot-to-shot intensity fluctuations. Calculations are performed with three-dimensional, time-dependent simulation code FAST (Nucl. Instr. and Meth. A 429 (1999) 233).

International Nuclear Information System (INIS)

English 2008 p. 216 Poland Zalewski, K. Nitkiewicz, B. Department of

UK PubMed Central (United Kingdom)

Background and AimsThe Diervilla and Lonicera clades are members of the family Caprifoliaceae (Dipsacales sensu Full Text Available

Science.gov (United States)

The data were collected over three growing seasons. They include density, vegetative biomass, and seed biomass of the two species within the plots. There ... ...

International Nuclear Information System (INIS)

... organic compounds other organic compounds separation processes

International Nuclear Information System (INIS)

... amino acids carbon 14 glutamine leaves nitrogen 14 nitrogen 15 nutrition

International Nuclear Information System (INIS)

Austenitic stainless steels have been implanted with molybdenum ions (Mo"+, 100 keV, 2.5 x 10"1"6 atoms cm"-"2). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of #approx# 1000 A with a maximum molybdenum concentration of #approx# 9 at.% Mo located at #approx# 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H_2SO_4 have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and ...

International Nuclear Information System (INIS)

A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...

International Nuclear Information System (INIS)

Sesame varieties/genotypes showed a good response to radiation with gamma rays and treatments with EMS. In M_1 both gamma rays and EMS influenced germination, seedling height, survival of plants and pollen fertility/sterility, producing deleterious effects on these characters. Compared to black seeded genotypes, white seeded ones are more susceptible to radiation. Both gamma rays and EMS produced various types of morphological variations in M_2 generation. These were dwarf plant mutants, mottled and fleshy leaved mutants (sterile), fasciated stem, flower colour, altered phyllotaxy, early, uniculm, capsule size variations, multiple capsule/leaf axil, seed coat colour variations, indehiscent and semi-indehiscent type mutants. Moreover, studies on quantitative characters including seed yield revealed the induction of mutants in both positive and negative directions for such traits which made a good scope ...

International Nuclear Information System (INIS)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

International Nuclear Information System (INIS)

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

UK PubMed Central (United Kingdom)

Immature seeds of castor bean (Ricinus communis) removed from the capsule at 25 to 40 days after pollination (25-40 DAP) and placed in an atmosphere of high relative humidity undergo...Full Text Available

Science.gov (United States)

In Slovenia two superb vegetable oils with high added nutritional value are produced: "Ekstra devisko oljcno olje Slovenske Istre (extra virgin olive oil from Slovene Istra)" and "Stajersko prekmursko bucno olje (pumpkin seed oil from Slovenia)". Their quality and genuineness must be monitored as adulteration can easily be undertaken. Olive oil genuineness determination experiences can show how analyses following an experience data-driven decision tree gathering several chemical determinations (fatty acids, (E)-isomers of fatty acids, sterol and tocopherol determinations) may be helpful in assessing the pumpkin seed oil from Slovenia genuineness. In the present work a set of HPLC triacylglycerol determinations was performed, based on the nine main triacylglycerols (LLLn, LLL, PLL, LOO, PLO, OOO, POO, SPL, and SLS) on a limited number of different pumpkin seed oils from northeastern Slovenia. The performed determinations ...

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

Energy Technology Data Exchange (ETDEWEB)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV ...

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of ...

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Combining in situ Rutherford backscattering and electrical transport measurements on low-temperature hydrogen-implanted amorphous Pd/sub 80/Si/sub 20/ films, we have studied the correlation between the hydrogen content and the resistivity.

UK PubMed Central (United Kingdom)

Nowadays, percutaneous pulmonary valve implantation is a successful alternative to surgery for patients requiring treatment of pulmonary valve dysfunction. However, owing to the wide variety of implantation...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV ...

UK PubMed Central (United Kingdom)

The effect of feedback and materials on perceptual learning was examined in normal hearing listeners exposed to cochlear implant simulations. Generalization was most robust when feedback paired...Full Text Available

UK PubMed Central (United Kingdom)

The temporal fine structure (TFS) of sound contributes significantly to the perception of music and speech in noise. The evaluation of new strategies to improve TFS delivery in cochlear implants (CIs)...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

Energy Technology Data Exchange (ETDEWEB)

The theoretical alignment limit for focused ion beam (FIB) implantation was deduced from the calculated resolution for the detection of an alignment mark. The alignment resolution varies with the signal to noise ratio and there is an optimum current which gives the best resolution. The alignment resolution epsilon/sub sigma/ is approximately 0.006 ..mu..m for a 160 keV Si/sup ++/ beam from our FIB implanter. The measured alignment error is approximately 0.06 ..mu..m and the main reason of this discrepancy is vibration. The ultimate limit on the alignment error can be reached through improvements in the implanter system.

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

Energy Technology Data Exchange (ETDEWEB)

One of the effective methods of deep modification of the surface of steels and alloys is the combination of ion implantation and plasma nitriding. In this work, the long-range effect is demonstrated in the case of combination of the effect of high- and low-energy ions of nitrogen on a martensitic steel for each ion implantation is usually not effective, and a titanium alloy used widely in industry.

International Nuclear Information System (INIS)

Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

Energy Technology Data Exchange (ETDEWEB)

P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

Energy Technology Data Exchange (ETDEWEB)

A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows ...

International Nuclear Information System (INIS)

Titanium and its alloy Ti6Al4V enjoy widespread use in various biomedical applications because of favourable local tissue response, higher corrosion resistance and fatigue strength than the stainless steels and cobalt-chromium alloy previously used. The study reported in this paper aims to optimize the conditions of nitrogen ion implantation on commercially pure titanium and to correlate the implantation parameters to the corrosion resistance. X-ray photoelectron spectroscopy was used to analyse surface concentration and the implantation processes. An improvement in the electrochemical behaviour of the passive film was shown to occur with nitrogen ion implantation on titanium, in simulated body fluids. (UK).

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

Energy Technology Data Exchange (ETDEWEB)

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Science.gov (United States)

Self-amplifying spontaneous radiation free-electron lasers, such as the LCLS or the European X-FEL, rely on the incoherent, spontaneous radiation as the seed for the amplifying process. Though this method overcomes the need for an external seed source one drawback is the incoherence of the effective seed signal. The FEL process allows for a natural growth of the coherence because the radiation phase information is spread out within the bunch due to slippage and diffraction of the radiation field. However, at short wavelengths this spreading is not sufficient to achieve complete coherence. In this presentation we report on the results of numerical simulations of the LCLS X-ray FEL. From the obtained radiation field distribution the coherence properties are extracted to help to characterize the FEL as a light source.

British Library Electronic Table of Contents (United Kingdom)

Abstract Superoxide dismutase (SOD) is ubiquitous in aerobic organisms and constitutes the first link in the enzyme scavenging system of reactive oxygen species. In the present study, species and organ diversity of SOD activity in a solution and in an in-gel assay system, as well as the effects of hydrogen peroxide (H2O2) on SOD activity, were investigated. In a solution assay system, SOD activity of jackfruit root, shoot, leaves, axes, and cotyledons, of maize embryos and endosperms, of mung bean leaves and seeds, of sacred lotus axes and cotyledons, and of rice and wheat leaves was increased by 1-15 mmol/L H2 O2. However, SOD activity in rice root and seeds, maize roots and leaves, mung bean roots and shoots, and wheat seeds was decreased by 1-15 mmol/L H2O2. The SOD activity of wheat ro...

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Cuphea, a relatively unknown plant outside the scientific community, might someday provide valuable oils for manufacturing soaps, detergents, surfactants, and lubricants, and may have medical, nutritional and dietetic applications as well. Unique properties of oils found in its seed make cuphea a potentially valuable new crop for the USA. Its seeds contain large quantities of medium-chain fatty acids such as lauric acid, which is used in manufacturing soaps and detergents. Other medium-chain fatty acids in cuphea can be used for clinical treatment of rare human ailments associated with fat absorption. New uses for the fatty acids in the seed may be developed and economic conditions may change, making the crop more or less valuable.

British Library Electronic Table of Contents (United Kingdom)

Summary Fruit vinegar can be obtained biologically from the fermentation of fruit wine using species of the genera Acetobacter. However, the productivity of vinegar is generally low because of the inhibition by substrate ethanol and product acetic acid. In this research, the yield of acetic acid, as well as the cell growth, in hawthorn vinegar fermentation was enhanced using beer for seed preparation. The higher yield of acetic acid of AC2005 was because of the higher alcohol dehydrogenase and aldehyde dehydrogenase activities caused by using beer for seed preparation. Furthermore, Acetobacter pasteurianus AC2005 showed acid stability during the fed batch fermentation of hawthorn vinegar.

British Library Electronic Table of Contents (United Kingdom)

Guar seed gum, consisting primarily of a high molecular weight galactomannan, is the most cost effective natural thickener, having broad applications in the food, cosmetics, paper, pharmaceutical and petroleum industries. The properties of the polymer can potentially be enhanced by genetic modification. Development of suitable endosperm-specific promoters for use in guar is desirable for metabolic engineering of the seed gum. A ~1.6?kb guar mannan synthase (MS) promoter region has been isolated. The MS promoter sequence was fused with the GUS reporter gene and overexpressed in the heterologous species alfalfa (Medicago sativa). The potential strength and specificity of the MS promoter was compared with those of the constitutive 35S promoter and the seed specific ?-phaseolin promoter. Quant...

British Library Electronic Table of Contents (United Kingdom)

Moso bamboo (Phyllostachys pubescens) is widely distributed in the acid soil region of Southern China, where great potential of aluminum (Al) toxicity exists. To evaluate the Al tolerance of Moso bamboo, seed germination and root elongation were compared with two rice cultivars, and physical and physiological damages were examined under various levels of Al stress. Results showed that Moso bamboo seed germination was inhibited when Al concentration increased to 500 ?M, and the median lethal concentration was 2,000??M. Comparatively, the rice seed germination was not inhibited even at a concentration of 2,000??M Al. Aluminum accumulated mainly in the cell wall of root apices, and entered into protoplasts as treating time prolonged and/or Al concentration increased, which resulted in apoptos...

International Nuclear Information System (INIS)

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H_2SO_4). Alloys with two nitrogen doses have been prepared (2.5x10"1"6 and 2x10"1"7 N atoms/cm"2). The implanted alloys have been characterized by "1"5N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical ...

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We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation ...

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Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...

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A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, ...

Science.gov (United States)

... BEAN, KIDNEY X X X X 06 VEGETABLE, LEGUME, GROUP BEAN, KIDNEY, SEED ... CATTLE, KIDNEY X 99 NO GROUP NAME CATTLE, LIVER ...

UK PubMed Central (United Kingdom)

Storage proteins are deposited into protein storage vacuoles (PSVs) during plant seed development and maturation and stably accumulate to high levels; subsequently, during germination the storage...Full Text Available

UK PubMed Central (United Kingdom)

The scaling of reproductive parameters to body size is important for understanding ecological and evolutionary patterns. Here, we derived allometric relationships for the number and mass of seeds, eggs...Full Text Available

UK PubMed Central (United Kingdom)

Subcellular organelles from castor bean (Ricinus communis) endosperm were isolated on discontinuous sucrose gradients from germinating seeds which were 1 to 7 days postimbibition. Marker...Full Text Available

UK PubMed Central (United Kingdom)

Two xyloglucan fractions have been isolated from the cotyledons of resting white-mustard seeds, the first by extraction with hot EDTA, and the second by subsequent extraction with alkali or lithium...Full Text Available

Science.gov (United States)

... Clifford H. Koger*. (2009) Weed Seed Contamination of Cotton Gin Trash. Weed Technology 23:4, 574-580Online publication date: ... ...

UK PubMed Central (United Kingdom)

Ion filtration chromatography on diethylaminoethyl-Sephadex A-25 has been used to separate two isozymes each of triose phosphate isomerase, glyceraldehyde 3-phosphate dehydrogenase, glycerate 3-phosphate...Full Text Available

UK PubMed Central (United Kingdom)

Using pharmacological and chromatographic techniques, it was shown that acetylcholine was present in all organs of both light- and dark-grown mung bean seedings (Phaseolus aureus)....Full Text Available

UK PubMed Central (United Kingdom)

Ribulose-1,5-bisphosphate carboxylase activity was found in endosperm of germinating castor bean seed Ricinus communis and was localized in proplastids. The endosperm carboxylase has...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

Soils of arid regions of Central Asia contain salts of different types that may differentially affect seed germination and plant development. We studied effect of NaCl, Na2SO4, 2NaCl + KCl + CaCl2 and 2Na2SO4+K2SO4+MgSO4 on germination of Kochia prostrata and Kochia scoparia seeds under a range of concentrations from 0.5 to 5% and at two constant temperature regimes +22 degrees C and +6 degrees C. The observed salt tolerance limit of germination at constant temperature +22 degrees C for both species was 5-6%, while at low temperature (+6 degrees C) this limit was 2%. The salt tolerance of young plants (before flowering) was 3% for NaCl. Low concentrations of sulfuric and mixed salts had a stimulating effect on seed germination in K. prostrata. Despite similarity of salt-tolerance limits...

UK PubMed Central (United Kingdom)

Low concentrations of sugars altered the sensitivity of seed germination to inhibition by exogenous abscisic acid (ABA). Germination of wild-type and ABA-insensitive (abi) Arabidopsis...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

Ascochyta blight causes significant yield loss in pulse crops worldwide. Integrated disease management is essential to take advantage of cultivars with partial resistance to this disease. The most effective practices, established by decades of research, use a combination of disease-free seed, destruction or avoidance of inoculum sources, manipulation of sowing dates, seed and foliar fungicides, and cultivars with improved resistance. An understanding of the pathosystems and the inter-relationship between host, pathogen and the environment is essential to be able to make correct decisions for disease control without compromising the agronomic or economic ideal. For individual pathosystems, some components of the integrated management principles may need to be given greater consideration tha...

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Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of ...

International Nuclear Information System (INIS)

Brachytherapy is used for treating certain types of cancer by inserting radioactive sources into tumours. CDTN/CNEN is developing brachytherapy seeds to be used mainly in prostate cancer treatment. Dose calculations play a very significant role in the characterization of the developed seeds. The current state-of-the-art of computation dosimetry relies on Monte Carlo methods using, for instance, MCNP codes. However, deterministic calculations have some advantages, as, for example, short computer time to find solutions. This paper presents a software developed to calculate doses in a two-dimensional space surrounding the seed, using a deterministic algorithm. The analysed seeds consist of capsules similar to IMC6711 (OncoSeed), that are commercially available. The exposure rates and absorbed doses are computed using the Sievert integral and the Meisberger third order polynomial, ...

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Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which ...

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Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are ...

Energy Technology Data Exchange (ETDEWEB)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here ...

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Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film ...

International Nuclear Information System (INIS)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of ...

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The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to ...

Energy Technology Data Exchange (ETDEWEB)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated ...

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

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The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged ...

International Nuclear Information System (INIS)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time ...

International Nuclear Information System (INIS)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has ...

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

International Nuclear Information System (INIS)

An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

International Nuclear Information System (INIS)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

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A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.

Energy Technology Data Exchange (ETDEWEB)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.

International Nuclear Information System (INIS)

The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).

Energy Technology Data Exchange (ETDEWEB)

The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

Science.gov (United States)

of the digital hearing aid technology that led to the cochlear implant. Former. Marshall Space Flight Center engineers. John Richardson and Joseph Howard ...

Energy Technology Data Exchange (ETDEWEB)

As to all sinter variations the microradiographic analysis showed that about 86 to 90 % of the implant surface were enclosed split-free with newly formed bone 16 weeks post operation. A silicate salt addition of the test variation Ap/sub 40/KS/sub 15/ and Ap/sub 40/KS/sub 30/ did not cause a negative influence on bone regeneration. On the surface of all test implants a double layer was revealed radiologically, consisting of a 30 - 40 ..mu..m thick bone near X-ray impermeable area and an X-ray permeable area of maximum 120 ..mu..m thickness directed to the nucleus of the implant.

Energy Technology Data Exchange (ETDEWEB)

The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21/sup 0/C +/- 1/sup 0/C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F/sup +/, Ar/sup +/, or As/sup +/ ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10/sup 18/ to 1 x 10/sup 20/ ions/m/sup 2/. The conductivity of films implanted with As/sup +/ was approximately one order greater than those implanted with Ar/sup +/, which in turn was approximately one-half order greater than those implanted with F/sup +/. The conductivity of the most conductive film approx.1 S/m) was almost 14 orders of ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

International Nuclear Information System (INIS)

Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x1014 ions cm-2. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm-1 compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced 12C(d,p)13C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It was found that the use of a large cold shield (liquid nitrogen trap) in the ion ...

International Nuclear Information System (INIS)

Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.

KoreaScience (Korea)

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Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by ...

International Nuclear Information System (INIS)

First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.

International Nuclear Information System (INIS)

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

International Nuclear Information System (INIS)

Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, insignificant IGC attack was noticed. The IGC resistance increased with increase in the dose for all the specimens aged at 973 K, and the ...

International Nuclear Information System (INIS)

We have demonstrated that optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-UV light with photon energies greater than the band gap energy of approx. equal to 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform UV illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of >= 100:1 and spatial resolution of approx. equal to 10 #mu#m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. equal to 100 mJ/cm"2) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. We have recently found from studies of H, He and Ar implanted PLZT that the ...

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. ...

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We report the results of characterization of nonlinear refractive index of the composite material produced by MeV Ag ion implantation of LiNbO{sub 3} crystal (z-cut). The material after implantation exhibited a linear optical absorption spectrum with the surface plasmon peak near 430 nm attributed to the colloidal silver nanoclusters. Heat treatment of the material at 500 C caused a shift of the absorption peak to 550 nm. The nonlinear refractive index of the sample after heat treatment was measured in the region of the absorption peak with the Z-scan technique using a tunable picosecond laser source (4.5 ps pulse width). The experimental data were compared against the reference sample made of MeV Cu implanted silica with the absorption peak in the same region. The nonlinear index of the Ag implanted LiNbO{sub 3} sample produced at five times less fluence is on average two times greater than that of the ...

International Nuclear Information System (INIS)

There is increasing use of radiofrequency radiation (RFR) in industry for communications, welding, security, radio, medicine, navigation etc. It has been recognised for some years that RFR may interact with cardiac pacemakers and steps have been taken to prevent this interference. It is less well recognised that other metallic implants may also act as antennas in an RFR field and possibly cause adverse health effects by heating local tissues. There are a large and increasing number of implants having metal components which may be found in RFR workers. These implants include artificial joints, rods and plates used in orthopaedics, rings in heart valves, wires in sutures, bionic ears, subcutaneous infusion systems and (external) transdermal drug delivery patches"1. The physician concerned with job placement of such persons requires information on the likelihood of an implant interacting with RFR so as to ...

Science.gov (United States)

Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.

International Nuclear Information System (INIS)

Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.

British Library Electronic Table of Contents (United Kingdom)

Abstract Objectives: The purpose of this study was to evaluate the osseointegration of the dental implants placed into the mandible augmented with different techniques in pigs. Material and methods: Four adult domestic pigs were used. Horizontal augmentation of the mandible was performed in animals by using vascularized femur flap (VFF), non-vascularized femur graft (NVFG) and monocortical mandibular block graft (MG). After 5 months of healing 10 dental implants were placed into each augmented site. The pigs were sacrificed after 3 months of healing. Undecalcified sections were prepared for histomorphometric analysis. Results: Mean bone-implant contact (BIC) values for implants placed into MG, NVFG and VFF were 57.38 11.97%, 76.5 7.88%, 76.53 8.15%, respectively. The BIC values of NVFG and...

International Nuclear Information System (INIS)

The surface layer optimized in resistance of corrosion and wear has been obtained by W + C dual implantation on H13 steel. The electrochemical polarization measurements show that the peak current density I_D is increased and then saturated with increasing of voltage scanning loops. The I_D is 100 times smaller than that of H13 steel, and 2-3 times smaller than that of tungsten. Then influence of dual implantation order on corrosion resistance is also studied. The I_D for W_5C_8 implanted first with W is half of that for C_5W_5 implanted first with C. The corrosion resistance structure of the samples after corrosion is observed by SEM. The X-ray analysis indicates that the structure consists of disperse phases of WC, W_2C, FeW, Fe_2W, FeW_2C and iron carbides. It is shown from Auger analysis that the optimum complex layer for corrosion resistance consists of thin carbon film on surface, disperse phases ...

International Nuclear Information System (INIS)

To investigate the dependence of the local texture of parts of an YBaCuO specimen on the distance of the seed crystal from the position of the part of the specimen, a very good textured YBaCuO specimen was cut into 9 rectangular pieces and into 12 boundary pieces of the cylindric original specimen. From the individual parts of the YBaCuO specimen the texture was measured by neutron diffraction at the Geesthacht reactor with an equal area raster. The grid width was 1 up to 10 deviation from the cylinder axis of the original YBaCuO cylinder and 2 from 10 deviation until 20 deviation. From the sum of the counted neutrons on small circles on the pole sphere the individual values of the distributions of the angular deviations of the c-axes of the crystalline domains from the cylinder axis have been calculated. The mean deviation of the c-axes from the axis of the original cylinder increases from the inner part with the seed crystal to the boundary ...

International Nuclear Information System (INIS)

The advances in laser technology have made available very short and intense laser pulses which can be used to seed a high-gain single-pass free-electron laser (FEL) amplifier. With these seed pulses, a regime of the FEL interaction where the radiation evolution is simultaneously dominated by nonlinear effects (saturation) and time-dependent effects (slippage) can be explored. This regime is characterized by the propagation of a solitary wavelike pulse where the power of the optical wave grows quadratically with time, its pulse length decreases and the spectral bandwidth increases. We analyze the interplay between the field and particle dynamics of this propagation regime which was studied before and termed super-radiance. Furthermore we analyze the properties of the strong higher-order harmonic emission from this wave and its behavior when propagating in a cascade FEL. The super-radiant pulse is indeed capable of passing through the stages of a ...

International Nuclear Information System (INIS)

Single crystal cubic boron nitride (cBN) was heteroepitaxially grown on a seed crystal of diamond under static high pressure and high temperature at 5.5GPa and 1,600--1,700 C, respectively, for 10--100 hour. A temperature gradient method was employed for the crystal growth by using lithium boron nitride as a solvent. Initial growth feature of cBN crystal was found on the diamond seed surface after the growing time of 10 minutes. The nucleation sites of the crystals seem to be near the etch pits on the diamond surface which were introduced by the surface dissolution by the solvent for cBN growth. Two types of growth features, island and step growth were typically shown on the surface. It can be seen that grown crystal appearing as a (111) nitrogen face was exhibited with the step growth feature, while the (11n) face exhibited the island growth feature. Considering the growth process under constant P-T growing condition, growth rate of cBN ...

British Library Electronic Table of Contents (United Kingdom)

Soluble starch?based biodegradable and microporous microspheres (SDM-Ms) were prepared by emulsion chemical cross-linking technique using trisodium trimetaphosphate (TSTP) as the cross-linker. The resultant amorphous SDM-Ms were excellently identified by scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The internal rupture and surface-controlled erosion were the predominant degradation mechanisms for SDM-Ms. The obtained SDM-Ms were applied to adsorb coix seed oil (CSO) by immersing method. The adsorption capacity of CSO within SDM-Ms was determined, namely 0.5238?g/g, and the thermal stability was shown higher than that of the free CSO. A burst release appeared in the second hour, followed by controlled release. Diffusion, d...

British Library Electronic Table of Contents (United Kingdom)

The effect of four extracts from neem seeds (Azadirachta indica) containing 2000, 5000, 9000 and 10,000ppm of azadirachtin A (AZA), quantified by high-performance liquid chromatography (HPLC) and diluted to 1.25%; 2.5%; 5.0%; 10.0% and 12.8% was verified by in vitro tests with engorged females and larvae of the cattle tick Rhipicephalus microplus. The results from the bioassays with the engorged females showed that the main toxic effect of the extracts was reduction of the reproductive parameters, with a sharp drop in the number of eggs laid and the hatching rate, mainly when the extracts were diluted to 10.0% and 12.8%. The product effectiveness (PE) calculations for all the solutions tested showed that the AZA solution at 10,000ppm (N10) was the most effective. However, statistical analy...

British Library Electronic Table of Contents (United Kingdom)

A galactose-specific seed lectin was purified from the legume Spatholobus parviflorus and crystallized using the hanging-drop vapour-diffusion technique. Thecrystals belonged to space group P1, with unit-cell parameters a = 60.998, b=60.792, c = 78.179-, = 101.32, = 91.38, = 104.32. X-ray diffraction data were collected under cryoconditions (100-K) to a resolution of 2.04- using a MAR image-plate detector system mounted on a rotating-anode X-ray (Cu-K) generator. Molecular replacement using legume-lectin coordinates as a search model gave a tetrameric structure.

Energy Technology Data Exchange (ETDEWEB)

Copper bioavailability was studied in rats using an extrinsic Cu label. Copper absorption from sunflower seeds (46%), peanuts (41%), cooked shrimp (50%), and cooked beef (40%) was as good or better than copper sulfate (46%). Copper from plant foods (sunflower seeds, garbanzo beans, peanuts) was absorbed equally as well as copper from animal foods (beef, shrimp, chicken liver), 39 +/- 7% vs 43 +/- 7%, P greater than 0.05. There was no significant difference in percentage Cu absorption between intrinsically labeled chicken liver and extrinsically labeled chicken liver. In a second experiment, Cu absorption was measured in the presence of glucose, fructose, sucrose, or cornstarch. There were no significant differences in Cu absorption due to different carbohydrates in a single meal.

International Nuclear Information System (INIS)

Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been ...

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A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess directly resulting ...

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We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

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We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

International Nuclear Information System (INIS)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

International Nuclear Information System (INIS)

The present work is a research of the effect of helium on the microstructure, mechanical properties and fracture behaviors of a type 316 austenitic steel. Helium implantation was performed by 30-MeV #alpha#-particle injection on very small size specimens, using a cyclotron. Average helium content in a He-deposited region was up to 2000 appm He. In the case of 2000appm He implantation, intergranular fracture was sometimes observed on the helium deposited region after tensile test at room temperature. At elevated temperature test, however, this material showed the transition of fracture mode from transgranular-ductile fracture at 773K to intergranular fracture at 873. In the case of 500 appm He implantation, the transition of fracture mode was recognized at a temperature range of 873K to 973K. (author).

British Library Electronic Table of Contents (United Kingdom)

Abstract Objective: To compare the vertical dimensional changes with regard to graft height in a long-term follow-up in patients treated with two different grafting materials used in maxillary sinus floor elevation procedures. Material and methods: Twenty consecutive patients were included. One group was grafted with autogenous bone from the mandible (chin area), and the other group was augmented with a 100%b-tricalcium phosphate (b-TCP). During a 4- to 5-year period, in each patient, at least five panoramic radiographs were made. These panoramic radiographs were used for morphometric measurements, at three different locations. The three locations were the first bone to implant contact at the distal side of the second most posterior implant (L1), halfway between this implant and the most p...

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

British Library Electronic Table of Contents (United Kingdom)

Abstract BACKGROUND: In Brazil, the usual forms of zinc (Zn) supply to coffee plants have limitations that compromise the element availability to the plant. This study proposes to test an alternative approach to supplying the nutrient to Coffea arabica L. using trunk implanted zinc tablets. Additionally, the effect of Zn on the production and quality of coffee beans was also evaluated. RESULTS: The highest total coffee bean production was recorded in plants implanted with Zn tablets (TA), while the lowest was recorded in the control treatment, without zinc supply (WZn), reaching a bianual production of 188.2 and 130.1 60-kg bags of processed beans per hectare, respectively. In the treatments where Zn were applied as tablet implantation or as foliage spraying (SZn); the bean size was larger...

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On 10 dialysis patients we performed 12 balloon dilatations, 2 catheter lyses, 6 stent implants (Palmaz stent) and one atherectomy of central venous stenoses or occlusions (v. subclavia, v. brachiocephalica) at the shunt arm of the patient. The primary success rate was, in balloon PTA and lysis, 12/14 interventions, and in stent placement and atherectomy 7/7. The angiographical and clinical primary result after stent implantation was significantly better than after conventional dilatation. After 66% of the balloon dilatations recidivation occurred within the first year; this can be treated by means of repeated PTA. Whether long-term exclusion of recurrence can be achieved by stent implantation, must be established by means of follow-up studies that are at present in progress. (orig.).

British Library Electronic Table of Contents (United Kingdom)

Abstract Introduction.- Infection is the worst complication seen with inflatable penile prosthesis (IPP). Both the American Medical Systems (AMS) and Coloplast IPP have infection retardant coatings. AMS is coated at the factory with rifampicin and minocycline (InhibiZone). The Coloplast IPP has a hydrophilic coating covalently bonded to its components that will absorb any aqueous solution before implantation and provides increased surface lubricity to decrease bacterial adherence. Aim.- We tested several antibiotic dips comparing zones of inhibition (ZOI) against five commonly infecting bacteria with coated Coloplast implants. Results were compared with those ZOI created with strips of an AMS IPP precoated with InhibiZone. Methods.- Pieces of sterile Coloplast Titan IPP were dipped in (i) ...

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A summary of the topics covered in papers presented at the 1995 Brookhaven joint conference on production, neutralization, and application of negative ion beams is given. The conference topics covered included plasma ion sources, plasma seeding of these sources for increased ion production, beam extraction and transport, computer simulation and design studies, and operation of existing and experimental ion source facilities. Application of the sources to accelerator, tokamak, and thin film deposition are discussed. (AIP) {copyright} {ital 1996 American Institute of Physics.}

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The NREL Sensitized Solar Cell (SSC) Core Program supports the Solar America Initiative by: (1) targeting new devices and processes for commercialization by 2015 that are less expensive, more efficient, highly reliable, and environmentally benign; (2) collaborating with DOE OS/BES to conduct basic research targeting breakthroughs in key areas, such as ultra-high efficiency and/or ultra-low cost materials and devices.

British Library Electronic Table of Contents (United Kingdom)

Rice, the world's major staple crop, is a poor source of essential micronutrients, including folates (vitamin B9). We report folate biofortification of rice seeds achieved by overexpressing two Arabidopsis thaliana genes of the pterin and para-aminobenzoate branches of the folate biosynthetic pathway from a single locus. We obtained a maximal enhancement as high as 100 times above wild type, with 100 g of polished raw grains containing up to four times the adult daily folate requirement.

UK PubMed Central (United Kingdom)

Fatty acid biosynthesis from Na[1-¹⁴C]acetate was characterized in plastids isolated from primary roots of 7-day-old germinating pea (Pisum sativum L.) seeds. Fatty acid...Full Text Available

Science.gov (United States)

A patient with a totally edentulous maxilla and a seVere Class III intermaxillary relationship in the anterior region was treated by implants. In the mandible, there were 10 teeth between the second premolars. The inclination and width of the maxillary anterior residual bone were measured on cephalometric X-ray film obtained before treatment. The results of cephalometric analysis did not support clockwise rotation of the mandible or lingual angling of the maxillary anterior teeth by use of prosthesis to improve the Class III relationship. Ten implants were simultaneously placed in the maxilla. Then, a maxillary temporary full bridge was seated after reduction of the crown lengths of the mandibular anterior teeth. An apically positioned flap operation was performed to eliminate periodontal pockets and to obtain clinically suitable crown lengths of the mandibular anterior teeth. A noncemented, screw-retained maxillary full bridge and a ...

UK PubMed Central (United Kingdom)

A ten week old girl who had previously undergone a palliative procedure for the hypoplastic left heart syndrome had unrelieved aortic coarctation that did not respond to standard balloon dilatation....Full Text Available

International Nuclear Information System (INIS)

High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is ...

UK PubMed Central (United Kingdom)

Background and purpose It has been speculated that the prevalence of metal allergy may be higher in patients with implant failure. We compared the prevalence and cause of revisions following...Full Text Available

Science.gov (United States)

... ADD137758. Title : The Oxidation Behavior of CoCrAlY, CoCrAl and Yttrium-Implanted CoCrAl Alloys Compared and Contrasted,. ...

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the ...

Energy Technology Data Exchange (ETDEWEB)

Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly ...

UK PubMed Central (United Kingdom)

BackgroundThis study aimed to assess whether endoscopic implantation of an injectable esophageal prosthesis, the Gatekeeper Reflux Repair System (GK), is a safe and effective therapy...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Plasma Immersion Ion Implantation (PIII) is a new hybrid technology for surface treatment of materials based on the principles of plasma nitriding and ion implantation. The equipment and the operation of the system are introduced. As well as providing an alternate method of ion implantation, it is possible to combine energetic ion bombardment with plasma nitriding. Different metal materials and treatment conditions have been studied. The capability of PIII-treatment to improve the properties of a wide range of metals has been proven. Application for forming tools and their industrial test has been successful. (orig.) [Deutsch] Die Plasmaimmersionsimplantation (PIII) ist eine neue Hybridtechnologie zur Behandlung von Werkstoffoberflaechen und basiert auf den Prinzipien des Plasmanitrierens und der Ionenimplantation. Die Anlagentechnik und die Arbeitsweise werden vorgestellt. Verfahrensspezifische Vorteile entstehen durch die ...

Energy Technology Data Exchange (ETDEWEB)

The enhancement of positive secondary ion yields of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In/sup +/ were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5x10/sup 15/ to 4x10/sup 16/ O-atoms/cm/sup 2/. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si/sup +/ intensity is proportional to c(O)sup(x) (with x=1.4) in the concentration regime, 1.5<=c(O)<=30 at%. The O/sup +/ intensity shows a similar dependence for c(O)> or approx.20 at.%.

UK PubMed Central (United Kingdom)

An evaluation of totally implanted venous access systems inserted in 163 consecutive children with cancer is reported. From 1988 to 1994, 180 subcutaneous ports were inserted in children more than 1...Full Text Available

International Nuclear Information System (INIS)

MRT criteria have been developed to distinguish between tumour and implant material following examination of 50 patients who had transsphenoidal hypophysectomies for tumours. Judgements were based on the postoperative hormonal status and the operation notes. Following contrast injection of Gd-DTPA and using T_1 weighted spin-echo sequences, implant material appeared as sandwich-like, linear or circular structures. Residual recurrent tumour produced homogenous or non-homogenous aspects without marginal enhancement in 84% of cases. Postoperative displacement of the infundibulum to the opposite side was observed in 73% of patients with tumour remnants. Sensitivity of MRT was 70%, specificity 95%. There was a positive predictive value of 94% and a negative predictive value of 72% with an accuracy of 81%. This provides assistance in differentiating between tumour remnants and implant material. MRT is recommended as a method of ...

UK PubMed Central (United Kingdom)

AimsTranscatheter treatment of heart valve disease is well established today. However, for the treatment of tricuspid regurgitation (TR), no effective catheter-based approach is...Full Text Available

International Nuclear Information System (INIS)

Nb_3Sn films (Tsub(c)=17.8 K) were obtained by implantation of Sn"+ ions into Nb films (1500 A thick) after subsequent annealing. The annealing temperature required for the formation of the A15 phase in the implanted films was about 100 K higher than for Nb-Sn sandwich films evaporated at 300 K. The influence of the Sn concentration and of the annealing temperature was studied by measuring the sample resistance. The Nb-Sn compounds formed during the annealing process were analysed by measurements of the Moessbauer-effect of "1"1"9Sn. The implantation method was also used to produce Nb-Ge films with a ratio Ge/Nb approximately 1/3. The Ge-concentration and the temperature of the Nb-target (300-1070 K) were varied. These variations as well as subsequent annealing at 600-850"0C did not lead to superconducting transition temperatures above 8 K. (Auth.).

UK PubMed Central (United Kingdom)

Restenosis remains the main complication of balloon angioplasty and/or stent implantation. Preclinical testing of new pharmacologic agents preventing restenosis largely rely on porcine models, where...Full Text Available

International Nuclear Information System (INIS)

(001) CZ silicon wafers were implanted with arsenic (As"+) at energies of 10--50 keV to doses of 2 x 10"1"4 to 5 x 10"1"5/cm"2. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As ...

International Nuclear Information System (INIS)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. ...