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Sample records for high temperature boron

  1. Matrix Transformation in Boron Containing High-Temperature Co-Re-Cr Alloys

    Science.gov (United States)

    Strunz, Pavel; Mukherji, Debashis; Beran, Přemysl; Gilles, Ralph; Karge, Lukas; Hofmann, Michael; Hoelzel, Markus; Rösler, Joachim; Farkas, Gergely

    2018-03-01

    An addition of boron largely increases the ductility in polycrystalline high-temperature Co-Re alloys. Therefore, the effect of boron on the alloy structural characteristics is of high importance for the stability of the matrix at operational temperatures. Volume fractions of ɛ (hexagonal close-packed—hcp), γ (face-centered cubic—fcc) and σ (Cr2Re3 type) phases were measured at ambient and high temperatures (up to 1500 °C) for a boron-containing Co-17Re-23Cr alloy using neutron diffraction. The matrix phase undergoes an allotropic transformation from ɛ to γ structure at high temperatures, similar to pure cobalt and to the previously investigated, more complex Co-17Re-23Cr-1.2Ta-2.6C alloy. It was determined in this study that the transformation temperature depends on the boron content (0-1000 wt. ppm). Nevertheless, the transformation temperature did not change monotonically with the increase in the boron content but reached a minimum at approximately 200 ppm of boron. A probable reason is the interplay between the amount of boron in the matrix and the amount of σ phase, which binds hcp-stabilizing elements (Cr and Re). Moreover, borides were identified in alloys with high boron content.

  2. Structure of boron nitride after the high-temperature shock compression

    International Nuclear Information System (INIS)

    Kurdyumov, A.V.; Ostrovskaya, N.F.; Pilipenko, V.A.; Pilyankevich, A.N.; Savvakin, G.I.; Trefilov, V.I.

    1979-01-01

    Boron nitride structure changes as a result of high temperature dynamic compression are studied. The X-ray technique and transmission electron microscopy have been applied. The data on the structure and regularities of formation of diamond-like modifications of boron nitride at high temperature impact compression permit to consider martensite transformation as the first stage of formation of the sphalerite phase stable at high pressures. The second stage is possible if the temperature at the impact moment is sufficiently high for intensive diffusion processes

  3. Oxidation of boron carbide at high temperatures

    International Nuclear Information System (INIS)

    Steinbrueck, Martin

    2005-01-01

    The oxidation kinetics of various types of boron carbides (pellets, powder) were investigated in the temperature range between 1073 and 1873 K. Oxidation rates were measured in transient and isothermal tests by means of mass spectrometric gas analysis. Oxidation of boron carbide is controlled by the formation of superficial liquid boron oxide and its loss due to the reaction with surplus steam to volatile boric acids and/or direct evaporation at temperatures above 1770 K. The overall reaction kinetics is paralinear. Linear oxidation kinetics established soon after the initiation of oxidation under the test conditions described in this report. Oxidation is strongly influenced by the thermohydraulic boundary conditions and in particular by the steam partial pressure and flow rate. On the other hand, the microstructure of the B 4 C samples has a limited influence on oxidation. Very low amounts of methane were produced in these tests

  4. XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li3N as catalysis

    International Nuclear Information System (INIS)

    Guo, Xiaofei; Xu, Bin; Zhang, Wen; Cai, Zhichao; Wen, Zhenxing

    2014-01-01

    Highlights: • The cBN was synthesized by Li 3 N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp 2 fractions are decreasing, and the sp 3 fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li 3 N in the film, it is possible that Li 3 N first reacts with hexagonal boron nitride to produce Li 3 BN 2 during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li 3 BN 2 under high pressure and high temperature, but not directly from the decomposition of Li 3 BN 2

  5. Boron application improves yield of rice cultivars under high temperature stress during vegetative and reproductive stages

    Science.gov (United States)

    Shahid, Mohammad; Nayak, Amaresh Kumar; Tripathi, Rahul; Katara, Jawahar Lal; Bihari, Priyanka; Lal, Banwari; Gautam, Priyanka

    2018-04-01

    It is reported that high temperatures (HT) would cause a marked decrease in world rice production. In tropical regions, high temperatures are a constraint to rice production and the most damaging effect is on spikelet sterility. Boron (B) plays a very important role in the cell wall formation, sugar translocation, and reproduction of the rice crop and could play an important role in alleviating high temperature stress. A pot culture experiment was conducted to study the effect of B application on high temperature tolerance of rice cultivars in B-deficient soil. The treatments comprised of four boron application treatments viz. control (B0), soil application of 1 kg B ha-1 (B1), soil application of 2 kg B ha-1 (B2), and foliar spray of 0.2% B (Bfs); three rice cultivars viz. Annapurna (HT stress tolerant), Naveen, and Shatabdi (both HT stress susceptible); and three temperature regimes viz. ambient (AT), HT at vegetative stage (HTV), and HT at reproductive stage (HTR). The results revealed that high temperature stress during vegetative or flowering stage reduced grain yield of rice cultivars mainly because of low pollen viability and spikelet fertility. The effects of high temperature on the spikelet fertility and grain filling varied among cultivars and the growth stages of plant when exposed to the high temperature stress. Under high temperature stress, the tolerant cultivar displays higher cell membrane stability, less accumulation of osmolytes, more antioxidant enzyme activities, and higher pollen viability and spikelet fertility than the susceptible cultivars. In the present work, soil application of boron was effective in reducing the negative effects of high temperature both at vegetative and reproductive stages. Application of B results into higher grain yield under both ambient and high temperature condition over control for all the three cultivars; however, more increase was observed for the susceptible cultivar over the tolerant one. The results suggest

  6. Boron application improves yield of rice cultivars under high temperature stress during vegetative and reproductive stages.

    Science.gov (United States)

    Shahid, Mohammad; Nayak, Amaresh Kumar; Tripathi, Rahul; Katara, Jawahar Lal; Bihari, Priyanka; Lal, Banwari; Gautam, Priyanka

    2018-04-12

    It is reported that high temperatures (HT) would cause a marked decrease in world rice production. In tropical regions, high temperatures are a constraint to rice production and the most damaging effect is on spikelet sterility. Boron (B) plays a very important role in the cell wall formation, sugar translocation, and reproduction of the rice crop and could play an important role in alleviating high temperature stress. A pot culture experiment was conducted to study the effect of B application on high temperature tolerance of rice cultivars in B-deficient soil. The treatments comprised of four boron application treatments viz. control (B0), soil application of 1 kg B ha -1 (B1), soil application of 2 kg B ha -1 (B2), and foliar spray of 0.2% B (Bfs); three rice cultivars viz. Annapurna (HT stress tolerant), Naveen, and Shatabdi (both HT stress susceptible); and three temperature regimes viz. ambient (AT), HT at vegetative stage (HTV), and HT at reproductive stage (HTR). The results revealed that high temperature stress during vegetative or flowering stage reduced grain yield of rice cultivars mainly because of low pollen viability and spikelet fertility. The effects of high temperature on the spikelet fertility and grain filling varied among cultivars and the growth stages of plant when exposed to the high temperature stress. Under high temperature stress, the tolerant cultivar displays higher cell membrane stability, less accumulation of osmolytes, more antioxidant enzyme activities, and higher pollen viability and spikelet fertility than the susceptible cultivars. In the present work, soil application of boron was effective in reducing the negative effects of high temperature both at vegetative and reproductive stages. Application of B results into higher grain yield under both ambient and high temperature condition over control for all the three cultivars; however, more increase was observed for the susceptible cultivar over the tolerant one. The results

  7. NATO Advanced Research Workshop on Boron Rich Solids Sensors for Biological and Chemical Detection, Ultra High Temperature Ceramics, Thermoelectrics, Armor

    CERN Document Server

    Orlovskaya, Nina

    2011-01-01

    The objective of this book is to discuss the current status of research and development of boron-rich solids as sensors, ultra-high temperature ceramics, thermoelectrics, and armor. Novel biological and chemical sensors made of stiff and light-weight boron-rich solids are very exciting and efficient for applications in medical diagnoses, environmental surveillance and the detection of pathogen and biological/chemical terrorism agents. Ultra-high temperature ceramic composites exhibit excellent oxidation and corrosion resistance for hypersonic vehicle applications. Boron-rich solids are also promising candidates for high-temperature thermoelectric conversion. Armor is another very important application of boron-rich solids, since most of them exhibit very high hardness, which makes them perfect candidates with high resistance to ballistic impact. The following topical areas are presented: •boron-rich solids: science and technology; •synthesis and sintering strategies of boron rich solids; •microcantileve...

  8. Synthesis of nano-sized amorphous boron powders through active dilution self-propagating high-temperature synthesis method

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jilin [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Gu, Yunle [School of Material Science and Engineering, Wuhan Institute of Technology, Wuhan 430073 (China); Li, Zili [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Wang, Weimin, E-mail: wangwm@hotmail.com [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Fu, Zhengyi [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

    2013-06-01

    Graphical abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed. Highlights: ► Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis method. ► The morphology, particle size and purity of the samples could be effectively controlled via changing the endothermic rate. ► The diluter KBH{sub 4} played an important role in active dilution synthesis of amorphous nano-sized boron powders. ► The active dilution method could be further popularized and become a common approach to prepare various inorganic materials. - Abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method at temperatures ranging from 700 °C to 850 °C in a SHS furnace using Mg, B{sub 2}O{sub 3} and KBH{sub 4} as raw materials. Samples were characterized by X-ray powder diffraction (XRD), Laser particle size analyzer, Fourier transform infrared spectra (FTIR), X-ray energy dispersive spectroscopy (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission TEM (HRTEM). The boron powders demonstrated an average particle size of 50 nm with a purity of 95.64 wt.%. The diluter KBH{sub 4} played an important role in the active dilution synthesis of amorphous nano-sized boron powders. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed.

  9. Synthesis of nano-sized amorphous boron powders through active dilution self-propagating high-temperature synthesis method

    International Nuclear Information System (INIS)

    Wang, Jilin; Gu, Yunle; Li, Zili; Wang, Weimin; Fu, Zhengyi

    2013-01-01

    Graphical abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed. Highlights: ► Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis method. ► The morphology, particle size and purity of the samples could be effectively controlled via changing the endothermic rate. ► The diluter KBH 4 played an important role in active dilution synthesis of amorphous nano-sized boron powders. ► The active dilution method could be further popularized and become a common approach to prepare various inorganic materials. - Abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method at temperatures ranging from 700 °C to 850 °C in a SHS furnace using Mg, B 2 O 3 and KBH 4 as raw materials. Samples were characterized by X-ray powder diffraction (XRD), Laser particle size analyzer, Fourier transform infrared spectra (FTIR), X-ray energy dispersive spectroscopy (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission TEM (HRTEM). The boron powders demonstrated an average particle size of 50 nm with a purity of 95.64 wt.%. The diluter KBH 4 played an important role in the active dilution synthesis of amorphous nano-sized boron powders. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed

  10. Iron solubility in highly boron-doped silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

    1998-01-01

    We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

  11. Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron

    Science.gov (United States)

    Gui, Miaomiao; Fang, Yunhui; Yu, Zhaoju

    2014-12-01

    In this paper, a hyperbranched polyborocarbosilane (HPBCS) was prepared by a one-pot synthesis with Cl2Si(CH3)CH2Cl, Cl3SiCH2Cl and BCl3 as the starting materials. The obtained HPBCS was characterized by GPC, FT-IR and NMR, and was confirmed to have hyperbranched structures. The thermal property of the resulting HPBCS was investigated by TGA. The ceramic yield of the HPBCS is about 84% and that of the counterpart hyperbranched hydridopolycarbosilane is only 45%, indicating that the introduction of boron into the preceramic polymer significantly improved the ceramic yield. With the polymer-derived ceramic route, the final ceramics were annealed at 1800 °C in argon atmosphere for 2 h in order to characterize the microstructure and to evaluate the high-temperature behavior. The final ceramic microstructure was studied by XRD and SEM, indicating that the introduction of boron dramatically inhibits SiC crystallization. The boron-containing SiC ceramic shows excellent high-temperature behavior against decomposition and crystallization at 1800 °C.

  12. Thermoelectric properties of boron and boron phosphide CVD wafers

    Energy Technology Data Exchange (ETDEWEB)

    Kumashiro, Y.; Yokoyama, T.; Sato, A.; Ando, Y. [Yokohama National Univ. (Japan)

    1997-10-01

    Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high temperatures and obeys Mott`s T{sup -{1/4}} rule. The thermoelectric power of polycrystalline boron decreases with increasing temperature, while that of amorphous boron is almost constant in a wide temperature range. The weak temperature dependence of the thermal conductivity of BP polycrystalline wafers reflects phonon scattering by grain boundaries. Thermal conductivity of an amorphous boron wafer is almost constant in a wide temperature range, showing a characteristic of a glass. The figure of merit of polycrystalline BP wafers is 10{sup -7}/K at high temperatures while that of amorphous boron is 10{sup -5}/K.

  13. Boron Carbide: Stabilization of Highly-Loaded Aqueous Suspensions, Pressureless Sintering, and Room Temperature Injection Molding

    Science.gov (United States)

    Diaz-Cano, Andres

    Boron carbide (B4C) is the third hardest material after diamond and cubic boron nitride. It's unique combination of properties makes B4C a highly valuable material. With hardness values around 35 MPa, a high melting point, 2450°C, density of 2.52 g/cm3, and high chemical inertness, boron carbide is used in severe wear components, like cutting tools and sandblasting nozzles, nuclear reactors' control rots, and finally and most common application, armor. Production of complex-shaped ceramic component is complex and represents many challenges. Present research presents a new and novel approach to produce complex-shaped B4C components. Proposed approach allows forming to be done at room temperatures and under very low forming pressures. Additives and binder concentrations are kept as low as possible, around 5Vol%, while ceramics loadings are maximized above 50Vol%. Given that proposed approach uses water as the main solvent, pieces drying is simple and environmentally safe. Optimized formulation allows rheological properties to be tailored and adjust to multiple processing approaches, including, injection molding, casting, and additive manufacturing. Boron carbide samples then were pressureless sintered. Due to the high covalent character of boron carbide, multiples sintering aids and techniques have been proposed in order to achieve high levels of densification. However, is not possible to define a clear sintering methodology based on literature. Thus, present research developed a comprehensive study on the effect of multiple sintering aids on the densification of boron carbide when pressureless sintered. Relative densities above 90% were achieved with values above 30MPa in hardness. Current research allows extending the uses and application of boron carbide, and other ceramic systems, by providing a new approach to produce complex-shaped components with competitive properties.

  14. A self-propagation high-temperature synthesis and annealing route to synthesis of wave-like boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jilin; Zhang, Laiping [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China); Gu, Yunle, E-mail: ncm@mail.wit.edu.cn [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China); Pan, Xinye; Zhao, Guowei; Zhang, Zhanhui [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China)

    2013-03-15

    Highlights: ► Large quantities of wave-like BN nanotubes were synthesized by SHS-annealing method. ► The catalytic boron-containing porous precursor was produced by self-propagation high-temperature synthesis method. ► Three growth models were proposed to explain the growth mechanism of the wave-like BN nanotubes. - Abstract: Large quantities of boron nitride (BN) nanotubes were synthesized by annealing a catalytic boron-containing porous precursor in flowing NH{sub 3} gas at 1180 °C. The porous precursor was prepared by self-propagation high-temperature synthesis (SHS) method at 800 °C using Mg, B{sub 2}O{sub 3} and amorphous boron powder (α-B) as the starting materials. The porous precursor played an important role in large quantities synthesis of BN nanotubes. The as-synthesized product was characterized by X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), Raman, Scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), Transmission electron microscopy (TEM) and High-resolution transmission electron microscopy (HRTEM). Characterization results indicated that the BN nanotubes displayed wave-like inner structures with diameters in the range of 50–300 nm and average lengths of more than 10 μm. The possible growth mechanism of the BN nanotubes was also discussed.

  15. The influence of boron on the crystal structure and properties of mullite. Investigations at ambient, high-pressure, and high-temperature conditions

    Energy Technology Data Exchange (ETDEWEB)

    Luehrs, Hanna

    2013-11-21

    Mullite is one of the most important synthetic compounds for advanced structural and functional ceramic materials. The crystal structure of mullite with the composition Al{sub 2}[Al{sub 2+2x}Si{sub 2-2x}]O{sub 10-x} can incorporate a large variety of foreign cations, including (amongst others) significant amounts of boron. However, no chemical or crystal structure analyses of boron-mullites (B-mullites) were available prior to this work, thus representing the key aspects of this thesis. Furthermore, the influence of boron on selected properties of mullite under ambient, high-temperature, and high-pressure conditions are addressed. Starting from a 3:2 mullite composition (Al{sub 4.5}Si{sub 1.5}O{sub 9.75}), the initial hypothesis for this study was a 1:1 isomorphous replacement of silicon by boron according to the coupled substitution mechanism: 2 Si{sup 4+} + O{sup 2-} → 2 B{sup 3+} + □. Based on a series of compounds synthesized from sol-gel derived precursors at ambient pressure and 1200 C, the formation conditions and physical properties of B-mullites were investigated. The formation temperature for B-mullites decreases with increasing boron-content, as revealed by thermal analyses. An anisotropic development of lattice parameters is observed: Whereas lattice parameters a and b only exhibit minor changes, a linear relationship between lattice parameter c and the amount of boron in the crystal structure was established, on the basis of prompt gamma activation analyses (PGAA) and Rietveld refinements. According to this relationship about 15% of the silicon in mullite can be replaced by boron yielding single-phase B-mullite. B-mullites with significantly higher (∝ factor 3) boron-contents in the mullite structure were also observed but the respective samples contain alumina impurities. Fundamental new details regarding the response of B-mullite to high-temperature and highpressure are presented in this thesis. On the one hand, long-term thermal stability at

  16. Boron doped diamond synthesized from detonation nanodiamond in a C-O-H fluid at high pressure and high temperature

    Science.gov (United States)

    Shakhov, Fedor M.; Abyzov, Andrey M.; Takai, Kazuyuki

    2017-12-01

    Boron doped diamond (BDD) was synthesized under high pressure and high temperature (HPHT) of 7 GPa, 1230 °C in a short time of 10 s from a powder mixtures of detonation nanodiamond (DND), pentaerythritol C5H8(OH)4 and amorphous boron. SEM, TEM, XRD, XPS, FTIR and Raman spectroscopy indicated that BDD nano- and micro-crystals have formed by consolidation of DND particles (4 nm in size). XRD showed the enlargement of crystallites size to 6-80 nm and the increase in diamond lattice parameter by 0.02-0.07% without appearance of any microstrains. Raman spectroscopy was used to estimate the content of boron atoms embedded in the diamond lattice. It was found that the Raman diamond peak shifts significantly from 1332 cm-1 to 1290 cm-1 without appearance of any non-diamond carbon. The correlation between Raman peak position, its width, and boron content in diamond is proposed. Hydrogenated diamond carbon in significant amount was detected by IR spectroscopy and XPS. Due to the doping with boron content of about 0.1 at%, the electrical conductivity of the diamond achieved approximately 0.2 Ω-1 cm-1. Reaction mechanism of diamond growth (models of recrystallization and oriented attachment) is discussed, including the initial stages of pentaerythritol pyrolysis and thermal desorption of functional groups from the surface of DND particles with the generation of supercritical fluid of low-molecular substances (H2O, CH4, CO, CO2, etc.), as well as byproducts formation (B2O3, B4C).

  17. Amorphous boron nanorod as an anode material for lithium-ion batteries at room temperature.

    Science.gov (United States)

    Deng, Changjian; Lau, Miu Lun; Barkholtz, Heather M; Xu, Haiping; Parrish, Riley; Xu, Meiyue Olivia; Xu, Tao; Liu, Yuzi; Wang, Hao; Connell, Justin G; Smith, Kassiopeia A; Xiong, Hui

    2017-08-03

    We report an amorphous boron nanorod anode material for lithium-ion batteries prepared through smelting non-toxic boron oxide in liquid lithium. Boron in theory can provide capacity as high as 3099 mA h g -1 by alloying with Li to form B 4 Li 5 . However, experimental studies of the boron anode have been rarely reported for room temperature lithium-ion batteries. Among the reported studies the electrochemical activity and cycling performance of the bulk crystalline boron anode material are poor at room temperature. In this work, we utilized an amorphous nanostructured one-dimensional (1D) boron material aiming at improving the electrochemical reactivity between boron and lithium ions at room temperature. The amorphous boron nanorod anode exhibited, at room temperature, a reversible capacity of 170 mA h g -1 at a current rate of 10 mA g -1 between 0.01 and 2 V. The anode also demonstrated good rate capability and cycling stability. The lithium storage mechanism was investigated by both sweep voltammetry measurements and galvanostatic intermittent titration techniques (GITTs). The sweep voltammetric analysis suggested that the contributions from lithium ion diffusion into boron and the capacitive process to the overall lithium charge storage are 57% and 43%, respectively. The results from GITT indicated that the discharge capacity at higher potentials (>∼0.2 V vs. Li/Li + ) could be ascribed to a capacitive process and at lower potentials (ions and the amorphous boron nanorod. This work provides new insights into designing nanostructured boron materials for lithium-ion batteries.

  18. The study of high-boron steel and high-boron cast iron used for shield

    International Nuclear Information System (INIS)

    Pan Xuerong; Lu Jixin; Wen Yaozeng; Wang Zhaishu; Cheng Jiantin; Cheng Wen; Shun Danqi; Yu Jinmu

    1996-12-01

    The smelting, forging, heat-treatment technology and the mechanical properties of three kinds of high-boron steels (type 1: 0.5% boron; type 2: 0.5% boron and 4% or 2% nickel; type 3: 0.5% boron, 0.5% nickel and 0.5% molybdenum) were studied. The test results show that the technology for smelting, forging and heat-treatment (1050 degree C/0.5 h water cooled + 810 degree C/1 h oil cooled) in laboratory is feasible. Being sensitive to notch, the impact toughness of high-boron steel type 1 is not steady and can not meet the technology requirements on mechanical properties. The mechanical properties of both high-boron steel type 2 and type 3 can meet the technological requirements. The smelting technology of high-boron casting iron containing 0.5% boron was researched. The tests show that this casting iron can be smelted in laboratory and its properties can basically satisfy the technology requirements. (10 refs., 6 figs., 11 tab.)

  19. Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

    Science.gov (United States)

    Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong

    2018-05-01

    After rapid cooling, cubic boron nitride (c-BN) single crystals synthesized under high pressure and high temperature (HPHT) are wrapped in the white film powders which are defined as growth interface. In order to make clear that the transition mechanism of c-BN single crystals, the variation of B and N atomic hybrid states in the growth interface is analyzed with the help of auger electron spectroscopy in the Li-based system. It is found that the sp2 fractions of B and N atoms decreases, and their sp3 fractions increases from the outer to the inner in the growth interface. In addition, Lithium nitride (Li3N) are not found in the growth interface by X-ray diffraction (XRD) experiment. It is suggested that lithium boron nitride (Li3BN2) is produced by the reaction of hexagonal boron nitride (h-BN) and Li3N at the first step, and then B and N atoms transform from sp2 into sp3 state with the catalysis of Li3BN2 in c-BN single crystals synthesis process.

  20. Experimental Studies on the Synthesis and Performance of Boron-containing High Temperature Resistant Resin Modified by Hydroxylated Tung Oil

    Science.gov (United States)

    Zhang, J. X.; Y Ren, Z.; Zheng, G.; Wang, H. F.; Jiang, L.; Fu, Y.; Yang, W. Q.; He, H. H.

    2017-12-01

    In this work, hydroxylated tung oil (HTO) modified high temperature resistant resin containing boron and benzoxazine was synthesized. HTO and ethylenediamine was used to toughen the boron phenolic resin with specific reaction. The structure of product was studied by Fourier-transform infrared spectroscopy(FTIR), and the heat resistance was tested by Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis(TGA). The results indicated that the conjugated triene structure of HTO was involved in the crosslinking of the heating curing progress, and in addition, the open-loop polymerization reaction of benzoxazine resin during heating can effectively reduce the curing temperature of the resin and reduce the release of small molecule volatiles, which is advantageous to follow-up processing. DSC data showed that the initial decomposition temperature of the resin is 350-400 °C, the carbon residue rate under 800 °C was 65%. It indicated that the resin has better heat resistance than normal boron phenolic resin. The resin can be used as an excellent ablative material and anti-friction material and has a huge application market in many fields.

  1. Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

    Directory of Open Access Journals (Sweden)

    Si eLi

    2015-02-01

    Full Text Available Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV was observed besides the band-to-band line (~1.1eV under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.

  2. A study on the boron injection initiation temperature curve of BWR

    International Nuclear Information System (INIS)

    Wang, S.-J.; Chien, C.-S.; Fann, S.-Y.; Chiang, S.-C.

    2007-01-01

    Boron injection initiation temperature (BIIT) provides important information for the safe shutdown of the reactor using boron injection system during anticipated transient without scram (ATWS). The purpose of this paper is to study BIIT curve of boiling water reactor owners' group (BWROG). The unreasonable and non-conservative parts of BIIT are pointed out and suggested modifications are made. The starting reactor power of BIIT is increased in order to meet the actual application. The lower limit of suppression pool temperature of BIIT is revised for conservative operation during ATWS conditions. Analysis of the effects of maximum temperature capacity of the suppression chamber and concentration of boron in standby liquid control tank shows that BIIT is decreased by adopting a more conservative value of maximum temperature capacity of the suppression chamber. Consequently, early boron injection is anticipated. For system with automatic boron injection system, BIIT is not required

  3. Investigation into boron reaction with titanium at extreme temperature gradients

    International Nuclear Information System (INIS)

    Korchagin, M.A.; Gusenko, S.N.; Aleksandrov, V.V.; Neronov, V.A.

    1981-01-01

    The mechanism of self-propagation high-temperature synthesis of titanium boride is studied using the translucent electron microscopy. Titanium interaction with boron film (approximately 1000 A thick) starts with the metal partial melting. A twozone layer of the reaction products, separating the reagents, is formed. In the zone adjacent to B, Ti 3 B 4 and fusible liquid phases are present. The second zone consists of TiB. The subsequent interaction is realized by Means of the dissolving and absorption by titanium of the layer of products during its continuous increase in boron. TiB 2 formation takes place at subsequent stages of interaction inside Ti liquid particles during their saturation by boron from the products absorbed [ru

  4. Constitutive relationships for 22MnB5 boron steel deformed isothermally at high temperatures

    International Nuclear Information System (INIS)

    Naderi, M.; Durrenberger, L.; Molinari, A.; Bleck, W.

    2008-01-01

    The strain, strain rate and temperature dependency of a boron steel, which was isothermally deformed under uniaxial compression tests, has been investigated at temperatures between 600 and 900 o C, and at strain rates of 0.1, 1.0 and 10.0 s -1 . Two constitutive models were used to correlate the plastic behavior: the Voce constitutive relation in combination with the kinetic model proposed by Kocks and the phenomenological model proposed by Molinari-Ravichandran. The Kocks model has been introduced in the Voce formulation to describe the temperature and the strain rate dependency of the saturation stress and of the yield stress. The Molinari-Ravichandran model is based on a single internal variable that can be viewed as being related to a characteristic length scale of the microstructure that develops during deformation. It has been shown that the plastic behavior of the boron steel can be well described using these two models

  5. Investigation of the hot ductility of a high-strength boron steel

    International Nuclear Information System (INIS)

    Güler, Hande; Ertan, Rukiye; Özcan, Reşat

    2014-01-01

    In this study, the high-temperature ductility behaviour of an Al–Si-coated 22MnB5 sheet was investigated. The mechanical properties of Al–Si-coated 22MnB5 boron steel were examined via hot tensile tests performed at temperatures ranging from 400 to 900 °C at a strain rate of 0.083 s −1 . The deformation and fracture mechanisms under hot tensile testing were considered in relation to the testing data and to the fracture-surface observations performed via SEM. The hot ductility of the tested boron steel was observed as a function of increasing temperature and the Al–Si-coated 22MnB5 boron steel exhibited a ductility loss at 700 °C

  6. Comparison of creep behavior under varying load/temperature conditions between Hastelloy XR alloys with different boron content levels

    International Nuclear Information System (INIS)

    Tsuji, Hirokazu; Nakajima, Hajime; Shindo, Masami; Tanabe, Tatsuhiko; Nakasone, Yuji.

    1996-01-01

    In the design of the high-temperature components, it is often required to predict the creep rupture life under the conditions in which the stress and/or temperature may vary by using the data obtained with the constant load and temperature creep rupture tests. Some conventional creep damage rules have been proposed to meet the above-mentioned requirement. Currently only limited data are available on the behavior of Hastelloy XR, which is a developed alloy as the structural material for high-temperature components of the High-Temperature Engineering Test Reactor (HTTR), under varying stress and/or temperature creep conditions. Hence a series of constant load and temperature creep rupture tests as well as varying load and temperature creep rupture tests was carried out on two kinds of Hastelloy XR alloys whose boron content levels are different, i.e., below 10 and 60 mass ppm. The life fraction rule completely fails in the prediction of the creep rupture life of Hastelloy XR with 60 mass ppm boron under varying load and temperature conditions though the rule shows good applicability for Hastelloy XR with below 10 mass ppm boron. The change of boron content level of the material during the tests is the most probable source of impairing the applicability of the life fraction rule to Hastelloy XR whose boron content level is 60 mass ppm. The modified life fraction rule has been proposed based on the dependence of the creep rupture strength on the boron content level of the alloy. The modified rule successfully predicts the creep rupture life under the two stage creep test conditions from 1000 to 900degC. The trend observed in the two stage creep tests from 900 to 1000degC can be qualitatively explained by the mechanism that the oxide film which is formed during the prior exposure to 900degC plays the role of the protective barrier against the boron dissipation into the environment. (J.P.N.)

  7. Boron evaporation in thermally-driven seawater desalination: Effect of temperature and operating conditions

    KAUST Repository

    Alpatova, Alla; Alsaadi, Ahmad Salem; Ghaffour, NorEddine

    2018-01-01

    The volatilization of boron in thermal desalination processes, namely multi-stage flash (MSF) and air-gap membrane distillation (AGMD) was investigated for the first time. This phenomenon was observed at feed temperatures above 55 °C in both studied processes. In simulated MSF process with two feeds, model boric acid and Red Sea water, boron concentration in distillate increased with feed temperature increase from 55 °C to 104 °C because of the increase in boric acid vapor pressure. Salinity and pH were the main factors controlling boron evaporation. The achieved boron concentrations in simulated MSF process were consistent with those measured in distillate samples collected from commercial MSF plants. The AGMD process also revealed a strong influence of operating temperature on boron removal. However, unlike MSF process, the boron concentration in AGMD permeate decreased with the feed temperature increase from 55 °C to 80 °C due probably to increase in vapor production and corresponding permeate dilution. When AGMD was operated in concentrating mode at a constant feed temperature of 80 °C, permeate boron concentration increased with process time due to concentration polarization and membrane fouling. A 10% flux decline observed after 21 h was attributed to CaCO scaling on the membrane surface.

  8. Boron evaporation in thermally-driven seawater desalination: Effect of temperature and operating conditions

    KAUST Repository

    Alpatova, Alla

    2018-03-26

    The volatilization of boron in thermal desalination processes, namely multi-stage flash (MSF) and air-gap membrane distillation (AGMD) was investigated for the first time. This phenomenon was observed at feed temperatures above 55 °C in both studied processes. In simulated MSF process with two feeds, model boric acid and Red Sea water, boron concentration in distillate increased with feed temperature increase from 55 °C to 104 °C because of the increase in boric acid vapor pressure. Salinity and pH were the main factors controlling boron evaporation. The achieved boron concentrations in simulated MSF process were consistent with those measured in distillate samples collected from commercial MSF plants. The AGMD process also revealed a strong influence of operating temperature on boron removal. However, unlike MSF process, the boron concentration in AGMD permeate decreased with the feed temperature increase from 55 °C to 80 °C due probably to increase in vapor production and corresponding permeate dilution. When AGMD was operated in concentrating mode at a constant feed temperature of 80 °C, permeate boron concentration increased with process time due to concentration polarization and membrane fouling. A 10% flux decline observed after 21 h was attributed to CaCO scaling on the membrane surface.

  9. High pressure synthesis and investigations of properties of boron allotropes and boron carbide

    International Nuclear Information System (INIS)

    Chuvashova, Irina

    2017-01-01

    This work aimed at the development of the high-pressure high-temperature (HPHT) synthesis of single crystals of boron allotropes and boron-rich compounds, which could be used further for precise investigations of their structures, properties, and behavior at extreme conditions. To summarize, the present work resulted in the HPHT synthesis of the first previously unknown non-icosahedral boron allotrope ζ-B. This finding confirmed earlier theoretical predictions, which stayed unproven for decades because of experimental challenges which couldn't be overcome until recently. Structural stability of α-B and β-B in the Mbar pressure range and B 13 C 2 up to 68 GPa was experimentally proven. Accurate measurements of the unit cell and B 12 icosahedra volumes of the stoichiometric boron carbide B 13 C 2 as a function of pressure led to conclusion that they undergo a similar reduction upon compression that is typical for covalently bonded solids. Neither 'molecular-like' nor 'inversed molecular-like' solid behavior upon compression was detected that has closed a long-standing scientific dispute. A comparison of the compressional behavior of B 13 C 2 with that of α-B and γ-B allotropes and B 4 C showed that it is determined by the types of bonding involved in the course of compression.

  10. High pressure synthesis and investigations of properties of boron allotropes and boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Chuvashova, Irina

    2017-06-12

    This work aimed at the development of the high-pressure high-temperature (HPHT) synthesis of single crystals of boron allotropes and boron-rich compounds, which could be used further for precise investigations of their structures, properties, and behavior at extreme conditions. To summarize, the present work resulted in the HPHT synthesis of the first previously unknown non-icosahedral boron allotrope ζ-B. This finding confirmed earlier theoretical predictions, which stayed unproven for decades because of experimental challenges which couldn't be overcome until recently. Structural stability of α-B and β-B in the Mbar pressure range and B{sub 13}C{sub 2} up to 68 GPa was experimentally proven. Accurate measurements of the unit cell and B{sub 12} icosahedra volumes of the stoichiometric boron carbide B{sub 13}C{sub 2} as a function of pressure led to conclusion that they undergo a similar reduction upon compression that is typical for covalently bonded solids. Neither 'molecular-like' nor 'inversed molecular-like' solid behavior upon compression was detected that has closed a long-standing scientific dispute. A comparison of the compressional behavior of B{sub 13}C{sub 2} with that of α-B and γ-B allotropes and B{sub 4}C showed that it is determined by the types of bonding involved in the course of compression.

  11. Highly thermal conductive carbon fiber/boron carbide composite material

    International Nuclear Information System (INIS)

    Chiba, Akio; Suzuki, Yasutaka; Goto, Sumitaka; Saito, Yukio; Jinbo, Ryutaro; Ogiwara, Norio; Saido, Masahiro.

    1996-01-01

    In a composite member for use in walls of a thermonuclear reactor, if carbon fibers and boron carbide are mixed, since they are brought into contact with each other directly, boron is reacted with the carbon fibers to form boron carbide to lower thermal conductivity of the carbon fibers. Then, in the present invention, graphite or amorphous carbon is filled between the carbon fibers to provide a fiber bundle of not less than 500 carbon fibers. Further, the surface of the fiber bundle is coated with graphite or amorphous carbon to suppress diffusion or solid solubilization of boron to carbon fibers or reaction of them. Then, lowering of thermal conductivity of the carbon fibers is prevented, as well as the mixing amount of the carbon fiber bundles with boron carbide, a sintering temperature and orientation of carbon fiber bundles are optimized to provide a highly thermal conductive carbon fiber/boron carbide composite material. In addition, carbide or boride type short fibers, spherical graphite, and amorphous carbon are mixed in the boron carbide to prevent development of cracks. Diffusion or solid solubilization of boron to carbon fibers is reduced or reaction of them if the carbon fibers are bundled. (N.H.)

  12. Boron evaporation in thermally-driven seawater desalination: Effect of temperature and operating conditions.

    Science.gov (United States)

    Alpatova, A; Alsaadi, A; Ghaffour, N

    2018-06-05

    The volatilization of boron in thermal desalination processes, namely multi-stage flash (MSF) and air-gap membrane distillation (AGMD) was investigated for the first time. This phenomenon was observed at feed temperatures above 55 °C in both studied processes. In simulated MSF process with two feeds, model boric acid and Red Sea water, boron concentration in distillate increased with feed temperature increase from 55 °C to 104 °C because of the increase in boric acid vapor pressure. Salinity and pH were the main factors controlling boron evaporation. The achieved boron concentrations in simulated MSF process were consistent with those measured in distillate samples collected from commercial MSF plants. The AGMD process also revealed a strong influence of operating temperature on boron removal. However, unlike MSF process, the boron concentration in AGMD permeate decreased with the feed temperature increase from 55 °C to 80 °C due probably to increase in vapor production and corresponding permeate dilution. When AGMD was operated in concentrating mode at a constant feed temperature of 80 °C, permeate boron concentration increased with process time due to concentration polarization and membrane fouling. A 10% flux decline observed after 21 h was attributed to CaCO 3 scaling on the membrane surface. Copyright © 2018 Elsevier B.V. All rights reserved.

  13. Boron content effect on the high-temperature plasticity of corrosion resistant low-carbon austenite type steels

    International Nuclear Information System (INIS)

    Gol'dshtejn, Ya.E.; Shmatko, M.N.; Chuvatina, S.N.

    1976-01-01

    With the concept that the state of grain and subgrain boundaries influences the hot plasticity of corrosion resistant steel as a starting point, the study was undertaken of the effect of boron microalloying up on the intergranular strength and of the action boron exerts upon the distribution (redistribution) of other phases present in austenitic 03Kh16N14M3 steels. An electron microscope study of the composition of redundant phases and that of the fine structure of steel have shown the effect of small additions of boron upon the hot plasticity of steel to be linked directly to its influence upon austenite disintegration and the precipitation along the boundaries of crystals of redundant phases in the course of hot plastic deformation. The action of boron upon the process plasticity of steel depends on the temperature and the rate of deformation which govern the kinetics of the precipitation of the redundant phases

  14. Study of the effects of focused high-energy boron ion implantation in diamond

    Science.gov (United States)

    Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

    2017-08-01

    Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

  15. Hot ductility behavior of a low carbon advanced high strength steel (AHSS) microalloyed with boron

    International Nuclear Information System (INIS)

    Mejia, I.; Bedolla-Jacuinde, A.; Maldonado, C.; Cabrera, J.M.

    2011-01-01

    Research highlights: → Effect of boron on the hot ductility behavior of a low carbon NiCrVCu AHSS. → Boron addition of 117 ppm improves hot ductility over 100% in terms of RA. → Hot ductility improvement is associated with segregation/precipitation of boron. → Typical hot ductility recovery at lower temperatures does not appear in this steel. → Hot ductility loss is associated with precipitates/inclusions coupled with voids. - Abstract: The current study analyses the influence of boron addition on the hot ductility of a low carbon advanced high strength NiCrVCu steel. For this purpose hot tensile tests were carried out at different temperatures (650, 750, 800, 900 and 1000 deg. C) at a constant true strain rate of 0.001 s -1 . Experimental results showed a substantial improvement in hot ductility for the low carbon advanced high strength steel when microalloyed with boron compared with that without boron addition. Nevertheless, both steels showed poor ductility when tested at the lowest temperatures (650, 750 and 800 deg. C), and such behavior is associated to the precipitation of vanadium carbides/nitrides and inclusions, particularly MnS and CuS particles. The fracture mode of the low carbon advanced high strength steel microalloyed with boron seems to be more ductile than the steel without boron addition. Furthermore, the fracture surfaces of specimens tested at temperatures showing the highest ductility (900 and 1000 deg. C) indicate that the fracture mode is a result of ductile failure, while in the region of poor ductility the fracture mode is of the ductile-brittle type failure. It was shown that precipitates and/or inclusions coupled with voids play a meaningful role on the crack nucleation mechanism which in turn causes a hot ductility loss. Likewise, dynamic recrystallization (DRX) which always results in restoration of ductility only occurs in the range from 900 to 1000 deg. C. Results are discussed in terms of boron segregation towards

  16. Hot ductility behavior of a low carbon advanced high strength steel (AHSS) microalloyed with boron

    Energy Technology Data Exchange (ETDEWEB)

    Mejia, I., E-mail: imejia@umich.mx [Instituto de Investigaciones Metalurgicas, Universidad Michoacana de San Nicolas de Hidalgo, Edificio ' U' , Ciudad Universitaria, 58066 Morelia, Michoacan (Mexico); Bedolla-Jacuinde, A.; Maldonado, C. [Instituto de Investigaciones Metalurgicas, Universidad Michoacana de San Nicolas de Hidalgo, Edificio ' U' , Ciudad Universitaria, 58066 Morelia, Michoacan (Mexico); Cabrera, J.M. [Departament de Ciencia dels Materials i Enginyeria Metal.lurgica, ETSEIB - Universitat Politecnica de Catalunya, Av. Diagonal 647, 08028 Barcelona (Spain); Fundacio CTM Centre Tecnologic, Av. de las Bases de Manresa 1, 08240 Manresa (Spain)

    2011-05-25

    Research highlights: {yields} Effect of boron on the hot ductility behavior of a low carbon NiCrVCu AHSS. {yields} Boron addition of 117 ppm improves hot ductility over 100% in terms of RA. {yields} Hot ductility improvement is associated with segregation/precipitation of boron. {yields} Typical hot ductility recovery at lower temperatures does not appear in this steel. {yields} Hot ductility loss is associated with precipitates/inclusions coupled with voids. - Abstract: The current study analyses the influence of boron addition on the hot ductility of a low carbon advanced high strength NiCrVCu steel. For this purpose hot tensile tests were carried out at different temperatures (650, 750, 800, 900 and 1000 deg. C) at a constant true strain rate of 0.001 s{sup -1}. Experimental results showed a substantial improvement in hot ductility for the low carbon advanced high strength steel when microalloyed with boron compared with that without boron addition. Nevertheless, both steels showed poor ductility when tested at the lowest temperatures (650, 750 and 800 deg. C), and such behavior is associated to the precipitation of vanadium carbides/nitrides and inclusions, particularly MnS and CuS particles. The fracture mode of the low carbon advanced high strength steel microalloyed with boron seems to be more ductile than the steel without boron addition. Furthermore, the fracture surfaces of specimens tested at temperatures showing the highest ductility (900 and 1000 deg. C) indicate that the fracture mode is a result of ductile failure, while in the region of poor ductility the fracture mode is of the ductile-brittle type failure. It was shown that precipitates and/or inclusions coupled with voids play a meaningful role on the crack nucleation mechanism which in turn causes a hot ductility loss. Likewise, dynamic recrystallization (DRX) which always results in restoration of ductility only occurs in the range from 900 to 1000 deg. C. Results are discussed in terms of

  17. Preparation of Boron Nitride Nanoparticles with Oxygen Doping and a Study of Their Room-Temperature Ferromagnetism.

    Science.gov (United States)

    Lu, Qing; Zhao, Qi; Yang, Tianye; Zhai, Chengbo; Wang, Dongxue; Zhang, Mingzhe

    2018-04-18

    In this work, oxygen-doped boron nitride nanoparticles with room-temperature ferromagnetism have been synthesized by a new, facile, and efficient method. There are no metal magnetic impurities in the nanoparticles analyzed by X-ray photoelectron spectroscopy. The boron nitride nanoparticles exhibit a parabolic shape with increase in the reaction time. The saturation magnetization value reaches a maximum of 0.2975 emu g -1 at 300 K when the reaction time is 12 h, indicating that the Curie temperature ( T C ) is higher than 300 K. Combined with first-principles calculation, the coupling between B 2p orbital, N 2p orbital, and O 2p orbital in the conduction bands is the main origin of room-temperature ferromagnetism and also proves that the magnetic moment changes according the oxygen-doping content change. Compared with other room temperature ferromagnetic semiconductors, boron nitride nanoparticles have widely potential applications in spintronic devices because of high temperature oxidation resistance and excellent chemical stability.

  18. Microstructure of a high boron 9-12% chromium steel

    Energy Technology Data Exchange (ETDEWEB)

    Andren, H.O. [Chalmers Univ. of Technology, Goeteborg (Sweden). Dept. of Applied Physics

    2008-07-01

    Additions of small amounts of boron (10-100 ppm) to 9-12% chromium steels are often made since they have been found to be beneficial for the creep strength up to and above 600 C. The effect of boron is to restrict the coarsening of M{sub 23}C{sub 6} precipitates during service. It was found that increasing the boron content from 9 to 40 ppm gave a decrease in coarsening constant at 600 C by a factor of 2. The present understanding of boron solution, non-equilibrium grain boundary segregation, incorporation into M{sub 23}C{sub 6}, and diffusion is reviewed in the paper. A very high boron addition (300 ppm) was made in the trial TAF steel already in the 1950'ies. The microstructure of a similar trial steel, FT3B, has been studied detail. In this steel large Mo, Cr, Fe and V containing metal borides are formed rather than the expected BN, with the crystal structure M{sub 2}B{sub 2}. Nitrogen is therefore still available for the formation of VN. Due to tempering at a low temperature (690 C) to a high strength (830 MPa), this steel contained a dense distribution of very small VN precipitates, 5-15 nm in size. A similar VN distribution is probably the cause of the still unsurpassed creep strength of the TAF steel. (orig.)

  19. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  20. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation.

    Science.gov (United States)

    Yilmaz, A Erdem; Boncukcuoğlu, Recep; Kocakerim, M Muhtar

    2007-06-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0 mA/cm(2), initial boron concentration 100mg/L and solution temperature 293 K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following; [formula in text]. Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  1. Hot ductility behavior of a low carbon advanced high strength steel (AHSS) microalloyed with boron

    OpenAIRE

    Mejía, Ignacio; Bedolla Jacuinde, Arnoldo; Maldonado, Cuauhtémoc; Cabrera Marrero, José M.

    2011-01-01

    The current study analyses the influence of boron addition on the hot ductility of a low carbon advanced high strength NiCrVCu steel. For this purpose hot tensile tests were carried out at different temperatures (650, 750, 800, 900 and 1000 ◦C) at a constant true strain rate of 0.001 s−1. Experimental results showed a substantial improvement in hot ductility for the low carbon advanced high strength steel when microalloyed with boron compared with that without boron addition. Nevertheless,...

  2. Investigations on the conditions for obtaining high density boron carbide by sintering

    International Nuclear Information System (INIS)

    Kislyj, P.S.; Grabtschuk, B.L.

    1975-01-01

    The results of investigations on kinetics of condensation and mechanisms of mass transfer in the process of sintering of technical, chemically pure and synthesized boron carbide are generalized. Laws on boron carbide densification depending upon temperature, time of isothermic endurance, thermal speed, size of powder particles and variable composition in homogeneity are determined. From the results obtained on condensation kinetics and special experiments on studying the changes in properties after heating under different conditions, the role of dislocation and diffusion processes in mass transfer during boron carbide sintering is exposed. The properties of sintered boron carbide are 15-20% lower than the properties of high-pressed one, that is conditioned by intercrystallite distortion of the first one and transcrystallite of the second one

  3. High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

    Science.gov (United States)

    Kang, Jin Ho (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Park, Cheol (Inventor); Bryant, Robert George (Inventor); Lowther, Sharon E. (Inventor)

    2015-01-01

    Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

  4. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-06-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm{sup 2}, initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10{sup 6}x[OH]{sup 0.11}x[CD]{sup 0.62}x[IBC]{sup -0.57}x[DSE]{sup -0.}= {sup 04}x[T]{sup -2.98}x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  5. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar

    2007-01-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm 2 , initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10 6 x[OH] 0.11 x[CD] 0.62 x[IBC] -0.57 x[DSE] -0.04 x[T] -2.98 x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  6. Development of automatic high-concentration boron measurement technique; Konodo hoso jido sokutei gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, T.; Honda, S.; Ito, A. [Kyushu Electric Power Co. Inc., Fukuoka (Japan)

    1997-03-01

    The technology that can automatically measure the boron concentration in boric acid water was developed. A high-concentration boric acid solution must be held at a high temperature to prevent the deposition. Skill and precision ({plus_minus}0.2 to 0.3% for 10 to 2500 ppm as boron concentration, and {plus_minus}2 to 3% for 2500 to 25,000 ppm) are required to analyze the boric acid solution manually. In theory, the boron concentration in a wide range can be measured, and boron has a constant-temperature function. A density hydrometer method that facilitates the treatment and calibration in high precision and at low cost was chosen. The vibration period generated when vibration is given to the solution specimen put in a U-tube is higher as the density is lower. On the basis of this theory, the density of a specimen can be obtained according to the relation with the same data of the known-concentration boric acid water. The high-concentration boric acid water that cannot be measured by the existing boron densitometer can be measured directly. It can also be measured in a low-concentration area. The technique can be used in a laboratory as the simplified method that is replaced by the current manual analysis. The reduction effect of analytical chemical`s waste liquid can also be expected. In the electric power industry, automated equipment is required for high efficiency and labor saving. 13 figs., 3 tabs.

  7. Two-channel neutron boron meter

    International Nuclear Information System (INIS)

    Chen Yongqing; Yin Guowei; Chai Songshan; Deng Zhaoping; Zhou Bin

    1993-09-01

    The two-channel neutron boron meter is a continuous on-line measuring device to measure boron concentration of primary cooling liquid of reactors. The neutron-leakage-compensation method is taken in the measuring mechanism. In the primary measuring configuration, the mini-boron-water annulus and two-channel and central calibration loop are adopted. The calibration ring and constant-temperature of boron-water can be remotely controlled by secondary instruments. With the microcomputer data processing system the boron concentration is automatically measured and calibrated in on-line mode. The meter has many advantages such as high accuracy, fast response, multi-applications, high reliability and convenience

  8. Effects of carbon content on high-temperature mechanical and thermal fatigue properties of high-boron austenitic steels

    Directory of Open Access Journals (Sweden)

    Xiang Chen

    2016-01-01

    Full Text Available High-temperature mechanical properties of high-boron austenitic steels (HBASs were studied at 850 °C using a dynamic thermal-mechanical simulation testing machine. In addition, the thermal fatigue properties of the alloys were investigated using the self-restraint Uddeholm thermal fatigue test, during which the alloy specimens were cycled between room temperature and 800°C. Stereomicroscopy and scanning electron microscopy were used to study the surface cracks and cross-sectional microstructure of the alloy specimens after the thermal fatigue tests. The effects of carbon content on the mechanical properties at room temperature and high-temperature as well as thermal fatigue properties of the HBASs were also studied. The experimental results show that increasing carbon content induces changes in the microstructure and mechanical properties of the HBASs. The boride phase within the HBAS matrix exhibits a round and smooth morphology, and they are distributed in a discrete manner. The hardness of the alloys increases from 239 (0.19wt.% C to 302 (0.29wt.% C and 312 HV (0.37wt.% C; the tensile yield strength at 850 °C increases from 165.1 to 190.3 and 197.1 MPa; and the compressive yield strength increases from 166.1 to 167.9 and 184.4 MPa. The results of the thermal fatigue tests (performed for 300 cycles from room temperature to 800 °C indicate that the degree of thermal fatigue of the HBAS with 0.29wt.% C (rating of 2–3 is superior to those of the alloys with 0.19wt.% (rating of 4–5 and 0.37wt.% (rating of 3–4 carbon. The main cause of this difference is the ready precipitation of M23(C,B6-type borocarbides in the alloys with high carbon content during thermal fatigue testing. The precipitation and aggregation of borocarbide particles at the grain boundaries result in the deterioration of the thermal fatigue properties of the alloys.

  9. Temperature and boron dependencies of buckling and radial reflector saving for VVER lattices

    International Nuclear Information System (INIS)

    Alvarez, C.

    1990-01-01

    The temperature and boron dependencies of buckling and radial reflectors savings are analyzed in this paper on the basis of the results from the calculations ZR-6M critical assembly. These dependencies are related to the physical behavior of temperature and boron reactivity coefficients for the cores of VVER-type critical facilities. As a byproduct, the parameter was also investigated and its dependence on water density was determined

  10. Research of boron conversion coating in neutron detector with boron deposited GEM

    International Nuclear Information System (INIS)

    Ye Di; Sun Zhijia; Zhou Jianrong; Wang Yanfeng; Yang Guian; Xu Hong; Chen Yuanbai; Xiao Yu; Diao Xungang

    2014-01-01

    GEM is a flourishing new gas detector and nowadays its technology become more mature. It has outstanding properties, such as excellent position resolution, high counting rate, radiation resistance, simple and flexible signal readout, can be large-area detector, wide application range. Detector with boron deposited GEM uses multilayer GEM with deposited boron film as neutron conversion carrier which reads out the information of neutron shot from the readout electrode with gas amplification from every GEM layer. The detector is high performance which can meet the demands of neutron detector of a new generation. Boron deposited neutron conversion electrode with boron deposited cathode and GEM included is the core part of the detector. As boron is a high-melting-point metalloid (> 2 000 ℃), electroplating and thermal evaporation are inappropriate ways. So finding a way to deposit boron on electrode which can meet the demands become a key technology in the development of neutron detector with boron deposited GEM. Compared with evaporation, sputtering has features such as low deposition temperature, high film purity, nice adhesive, thus is appropriate for our research. Magnetron sputtering is a improved way of sputtering which can get lower sputtering air pressure and higher target voltage, so that we can get better films. Through deposit process, the research uses magnetron sputtering to deposit pure boron film on copper electrode and GEM film. This method can get high quality, nice adhere, high purity, controllable uniformity, low cost film with high speed film formation. (authors)

  11. High temperature synthesis of ceramic composition by directed reaction of molten titanium or zirconium with boron carbide

    International Nuclear Information System (INIS)

    Johnson, W.B.

    1990-01-01

    Alternative methods of producing ceramics and ceramic composites include sintering, hot pressing and more recently hot isostatic pressing (HIP) and self-propagating high temperature synthesis (SHS). Though each of these techniques has its advantages, each suffers from several restrictions as well. Sintering may require long times at high temperatures and for most materials requires sintering aids to get full density. These additives can, and generally do, change (often degrade) the properties of the ceramic. Hot pressing and hot isostatic pressing are convenient methods to quickly prepare samples of some materials to full density, but generally are expensive and may damage some types of reinforcements during densification. This paper focuses on the preparation and processing of composites prepared by the directed reaction of molten titanium or zirconium with boron carbide. Advantages and disadvantages of this approach when compared to traditional methods are discussed, with reference to specific examples. Examples of microstructure are properties of these materials are reported

  12. ICP-MS determination of boron: method optimization during preparation of graphite reference material for boron

    International Nuclear Information System (INIS)

    Granthali, S.K.; Shailaja, P.P.; Mainsha, V.; Venkatesh, K.; Kallola, K.S.; Sanjukta, A.K.

    2017-01-01

    Graphite finds widespread use in nuclear reactors as moderator, reflector, and fuel fabricating components because of its thermal stability and integrity. The manufacturing process consists of various mixing, moulding and baking operations followed by heat-treatment between 2500 °C and 3000 °C. The high temperature treatment is required to drive the amorphous carbon-to-graphite phase transformation. Since synthetic graphite is processed at high temperature, impurity concentrations in the precursor carbon get significantly reduced due to volatilization. However boron may might partly gets converted into boron carbide at high temperatures in the carbon environment of graphite and remains stable (B_4C: boiling point 3500 °C) in the matrix. Literature survey reveals the use of various methods for determination of boron. Previously we have developed a method for determination of boron in graphite electrodes using inductively coupled plasma mass spectrometry (ICP-MS). The method involves removal of graphite matrix by ignition of the sample at 800°C in presence of saturated barium hydroxide solution to prevent the loss of boron. Here we are reporting a modification in the method by using calcium carbonate in place of barium hydroxide and using beryllium (Be) as an internal standard, which resulted in a better precession. The method was validated by spike recovery experiments as well as using another technique viz. Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES). The modified method was applied in evaluation of boron concentration in the graphite reference material prepared

  13. Temperature and boron dependencies of buckling and radial reflector savings for VVER lattices

    International Nuclear Information System (INIS)

    Alvarez, C.

    1990-01-01

    The temperature and boron dependencies of buckling and radial reflector savings are analyzed in this paper on the basis of the results from the calculations for the ZR-6M critical assembly. These dependencies are related to he physical behaviour of temperature and boron reactivity coefficients for the cores of VVER-type critical facilities. As a byproduct, the dp/dBg 2 parameter was also investigated and its dependence on water density was determined

  14. Boron effect on stainless steel plasticity under hot deformation

    International Nuclear Information System (INIS)

    Bulat, S.I.; Kardonov, B.A.; Sorokina, N.A.

    1978-01-01

    The effect of boron on plasticity of stainless steels at temperatures of hot deformation has been studied at three levels of alloying, i.e. 0-0.01% (micro-alloying or modifying), 0.01-0.02% (low alloying) and 0.02-2.0% (high alloying). Introduction of 0.001-0.005% of boron increases hot plasticity of both low and high carbon stainless steels due to decrease in grain size and strengthening of grain boundaries. Microalloying by boron has a positive effect at temperatures below 1200-1220 deg C. At higher temperatures, particularly when its content exceeds 0.008%, boron deteriorates plasticity by increasing the size of grains and weakening their boundaries. 0.1-2% boron strengthen the stainless steel and dectease its plasticity

  15. Regime of very high confinement in the boronized DIII-D tokamak

    International Nuclear Information System (INIS)

    Jackson, G.L.; Winter, J.; Taylor, T.S.; Burrell, K.H.; DeBoo, J.C.; Greenfield, C.M.; Groebner, R.J.; Hodapp, T.; Holtrop, K.; Lazarus, E.A.; Lao, L.L.; Lippmann, S.I.; Osborne, T.H.; Petrie, T.W.; Phillips, J.; James, R.; Schissel, D.P.; Strait, E.J.; Turnbull, A.D.; West, W.P.; DIII-D Team

    1991-01-01

    Following boronization, tokamak discharges in DIII-D have been obtained with confinement times up to a factor of 3.5 above the ITER89-P L-mode scaling and 1.8 times greater than the DIII-D/JET H-mode scaling relation. Very high confinement phases are characterized by relatively high central density with n e (0)∼1x10 20 m -3 , and central ion temperatures up to 13.6 keV at moderate plasma currents (1.6 MA) and heating powers (12.5--15.3 MW). These discharges exhibit a low fraction of radiated power, P≤25%, Z eff (0) close to unity, and lower impurity influxes than comparable DIII-D discharges before boronization

  16. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  17. Boron removal from geothermal waters by electrocoagulation

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar; Yilmaz, M. Tolga; Paluluoglu, Cihan

    2008-01-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm 2 , but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%

  18. Fractionation of boron isotopes in Icelandic hydrothermal systems

    International Nuclear Information System (INIS)

    Aggarwal, J.K.

    1995-01-01

    Boron isotope ratios have been determined in a variety of different geothermal waters from hydrothermal systems across Iceland. Isotope ratios from the high temperature meteoric water recharged systems reflect the isotope ratio of the host rocks without any apparent fractionation. Seawater recharged geothermal systems exhibit more positive δ 1 1B values than the meteoric water recharged geothermal systems. Water/rock ratios can be assessed from boron isotope ratios in the saline hydrothermal systems. Low temperature hydrothermal systems also exhibit more positive δ 1 1B than the high temperature systems, indicating fractionation of boron due to absorption of the lighter isotope onto secondary minerals. Fractionation of boron in carbonate deposits may indicate the level of equilibrium attained within the systems. (author). 14 refs., 2 figs

  19. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    International Nuclear Information System (INIS)

    Nistor, L C; Nistor, S V; Dinca, G; Georgeoni, P; Landuyt, J van; Manfredotti, C; Vittone, E

    2002-01-01

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m -2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond

  20. Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications.

    Science.gov (United States)

    Kang, Joon Sang; Wu, Huan; Hu, Yongjie

    2017-12-13

    Heat dissipation is an increasingly critical technological challenge in modern electronics and photonics as devices continue to shrink to the nanoscale. To address this challenge, high thermal conductivity materials that can efficiently dissipate heat from hot spots and improve device performance are urgently needed. Boron phosphide is a unique high thermal conductivity and refractory material with exceptional chemical inertness, hardness, and high thermal stability, which holds high promises for many practical applications. So far, however, challenges with boron phosphide synthesis and characterization have hampered the understanding of its fundamental properties and potential applications. Here, we describe a systematic thermal transport study based on a synergistic synthesis-experimental-modeling approach: we have chemically synthesized high-quality boron phosphide single crystals and measured their thermal conductivity as a record-high 460 W/mK at room temperature. Through nanoscale ballistic transport, we have, for the first time, mapped the phonon spectra of boron phosphide and experimentally measured its phonon mean free-path spectra with consideration of both natural and isotope-pure abundances. We have also measured the temperature- and size-dependent thermal conductivity and performed corresponding calculations by solving the three-dimensional and spectral-dependent phonon Boltzmann transport equation using the variance-reduced Monte Carlo method. The experimental results are in good agreement with that predicted by multiscale simulations and density functional theory, which together quantify the heat conduction through the phonon mode dependent scattering process. Our finding underscores the promise of boron phosphide as a high thermal conductivity material for a wide range of applications, including thermal management and energy regulation, and provides a detailed, microscopic-level understanding of the phonon spectra and thermal transport mechanisms of

  1. Joining of boron carbide using nickel interlayer

    International Nuclear Information System (INIS)

    Vosughi, A.; Hadian, A. M.

    2008-01-01

    Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300 d eg C a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by increasing the bonding temperature above 1250 d eg C . The results of this study showed that direct bonding technique along with nickel interlayer can be successfully utilized for bonding boron carbide ceramic to itself. This method may be used for bonding boron carbide to metals as well.

  2. A novel RE-chrome-boronizing technology assisted by fast multiple rotation rolling treatment at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xing-dong [School of Materials Science and Engineering, Shandong University, Jinan 250061 (China); School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101 (China); Xu, Bin, E-mail: xubin@sdjzu.edu.cn [School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101 (China); Cai, Yu-cheng [School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101 (China)

    2015-12-01

    Highlights: • A nanostructured layer with grain size of approximately 30 nm was successfully fabricated in the upper-layer of carbon steel. • The penetrating rate was enhanced significantly by the fast multiple rotation rolling (FMRR) treatment at low temperature. • A novel and efficient RE-Chrome-Boronizing technology assisted by fast multiple rotation rolling (FMRR) treatment at low temperature was used to fabricate boride layers on the surface of carbon steel. - Abstract: The boride layer was fabricated on the surface of carbon steel by a novel RE-Chrome-Boronizing technology assisted by fast multiple rotation rolling (FMRR) treatment at low temperature. The microstructure of the boride layer was characterized by using scanning electron microscopy (SEM). The microstructure of the top surface layer of substrate was characterized by transmission electron microscopy (TEM) and high resolution rransmission electron microscopy (HRTEM). Experimental results showed that a nanostructured layer with grain size of approximately 30 nm was obtained; the amorphous phase and high-density dislocations were observed in upper-layer of FMRR samples, which led to the reduction of diffusion activation energy of boron atoms. Boride layers fabricated on the FMRR samples are continuous, dense, uniform, and low in brittleness. The penetrating rate was enhanced significantly when the FMRR samples were Cr-Rare earth-boronized at 650 °C for 6 h. The thickness of the boride layer of FMRR samples on carbon steel was approximately 25 μm when the duration was 60 min, which was approximately 1.5 times higher than the original sample. The boride layer consisted of mainly Fe2B, and adheres well to the metallic substrate.

  3. The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2014-11-15

    Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

  4. Effects of cooling rate, austenitizing temperature and austenite deformation on the transformation behavior of high-strength boron steel

    International Nuclear Information System (INIS)

    Mun, Dong Jun; Shin, Eun Joo; Choi, Young Won; Lee, Jae Sang; Koo, Yang Mo

    2012-01-01

    Highlights: ► Non-equilibrium segregation of B in steel depends strongly on the cooling rate. ► A higher austenitization temperature reduced the B hardenability effect. ► An increase in B concentration at γ grain boundaries accelerates the B precipitation. ► The loss of B hardenability effect is due to intragranular borocarbide precipitation. ► The controlled cooling after hot deformation increased the B hardenability effect. - Abstract: The phase transformation behavior of high-strength boron steel was studied considering the segregation and precipitation behavior of boron (B). The effects of cooling rate, austenitizing temperature and austenite deformation on the transformation behavior of B-bearing steel as compared with B-free steel were investigated by using dilatometry, microstructural observations and analysis of B distribution. The effects of these variables on hardenability were discussed in terms of non-equilibrium segregation mechanism and precipitation behavior of B. The retardation of austenite-to-ferrite transformation by B addition depends strongly on cooling rate (CR); this is mainly due to the phenomenon of non-equilibrium grain boundary segregation of B. The hardenability effect of B-bearing steel decreased at higher austenitizing temperature due to the precipitation of borocarbide along austenite grain boundaries. Analysis of B distribution by second ion mass spectroscopy confirmed that the grain boundary segregation of B occurred at low austenitizing temperature of 900 °C, whereas B precipitates were observed along austenite grain boundaries at high austenitizing temperature of 1200 °C. The significant increase in B concentration at austenite grain boundaries due to grain coarsening and a non-equilibrium segregation mechanism may lead to the B precipitation. In contrast, solute B segregated to austenite grain boundaries during cooling after heavy deformation became more stable because the increase in boundary area by grain

  5. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    Crossley, D.; Wood, A.J.; McInnes, C.A.J.; Jones, I.G.

    1978-09-01

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 300 0 C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 1050 0 C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  6. Adsorption of boron from boron-containing wastewaters by ion exchange in a continuous reactor

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Yilmaz, M. Tolga; Kocakerim, M. Muhtar

    2005-01-01

    In this study, boron removal from boron-containing wastewaters prepared synthetically was investigated. The experiments in which Amberlite IRA 743, boron specific resin was used were carried out in a column reactor. The bed volume of resin, boron concentration, flow rate and temperature were selected as experimental parameters. The experimental results showed that percent of boron removal increased with increasing amount of resin and with decreasing boron concentration in the solution. Boron removal decreased with increasing of flow rate and the effect of temperature on the percent of total boron removal increased the boron removal rate. As a result, it was seen that about 99% of boron in the wastewater could be removed at optimum conditions

  7. Method for producing polycrystalline boron nitride

    International Nuclear Information System (INIS)

    Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

    1975-01-01

    A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

  8. Helium diffusion in irradiated boron carbide

    International Nuclear Information System (INIS)

    Hollenberg, G.W.

    1981-03-01

    Boron carbide has been internationally adopted as the neutron absorber material in the control and safety rods of large fast breeder reactors. Its relatively large neutron capture cross section at high neutron energies provides sufficient reactivity worth with a minimum of core space. In addition, the commercial availability of boron carbide makes it attractive from a fabrication standpoint. Instrumented irradiation experiments in EBR-II have provided continuous helium release data on boron carbide at a variety of operating temperatures. Although some microstructural and compositional variations were examined in these experiments most of the boron carbide was prototypic of that used in the Fast Flux Test Facility. The density of the boron carbide pellets was approximately 92% of theoretical. The boron carbide pellets were approximately 1.0 cm in diameter and possessed average grain sizes that varied from 8 to 30 μm. Pellet centerline temperatures were continually measured during the irradiation experiments

  9. Effects of boron and aging on mechanical properties and martensitic temperatures in Cu-Zn-Al shape-memory alloys

    International Nuclear Information System (INIS)

    Han, Y.S.; Kim, Y.G.

    1987-01-01

    This work is concerned with the effects of added boron (0.1 w/o) on mechanical properties and martensitic transformation temperatures (Ms) of the Cu - 14.0 Zn - 8.5. Al shape memory alloy. The composition was designed to have Ms temperature in the vicinity of 100 0 C. The influence of applying step quenching on the variation in Ms temperatures has been studied in boron-free Cu - 14.0 Zn - 8.5 Al and boron-containing Cu - 14.0 Zn 8.5 Al - 0.1 B alloys. Aging kinetics and transformation temperatures have been determined by electrical resistivity measurements

  10. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, L C [National Institute for Materials Physics, Bucharest (Romania); Nistor, S V [National Institute for Materials Physics, Bucharest (Romania); Dinca, G [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Georgeoni, P [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Landuyt, J van [University of Antwerpen - RUCA, EMAT, Antwerpen (Belgium); Manfredotti, C [Experimental Physics Department, University of Turin, Turin (Italy); Vittone, E [Experimental Physics Department, University of Turin, Turin (Italy)

    2002-11-11

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp{sup 3} bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m{sup -2} is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.

  11. Preparation and properties of hexagonal boron nitride fibers used as high temperature membrane filter

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xinmei, E-mail: houxinmei@ustb.edu.cn; Yu, Ziyou; Li, Yang; Chou, Kuo-Chih

    2014-01-01

    Graphical abstract: - Highlights: • h-BN fibers were successfully fabricated using H{sub 3}BO{sub 3} and C{sub 3}H{sub 6}N{sub 6} as raw materials. • The obtained BN fibers were polycrystalline and uniform in morphology. • It exhibited good oxidation resistance and low thermal expansion coefficient. - Abstract: Hexagonal boron nitride fibers were synthesized via polymeric precursor method using boric acid (H{sub 3}BO{sub 3}) and melamine (C{sub 3}H{sub 6}N{sub 6}) as raw materials. The precursor fibers were synthesized by water bath and BN fibers were prepared from the precursor at 1873 K for 3 h in flowing nitrogen atmosphere. The crystalline phase and microstructures of BN fibers were examined by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy. The results showed that h-BN fibers with uniform morphology were successfully fabricated. The well-synthesized BN fibers were polycrystalline with 0.4–1.5 μm in diameter and 200–500 μm in length. The as-prepared samples exhibited good oxidation resistance and low thermal expansion coefficient at high temperature.

  12. Mechanical characteristics of heterogeneous structures obtained by high-temperature brazing of corrosion-resistant steels with rapidly quenched non-boron nickel-based alloys

    Science.gov (United States)

    Kalin, B.; Penyaz, M.; Ivannikov, A.; Sevryukov, O.; Bachurina, D.; Fedotov, I.; Voennov, A.; Abramov, E.

    2018-01-01

    Recently, the use rapidly quenched boron-containing nickel filler metals for high temperature brazing corrosion resistance steels different classes is perspective. The use of these alloys leads to the formation of a complex heterogeneous structure in the diffusion zone that contains separations of intermediate phases such as silicides and borides. This structure negatively affects the strength characteristics of the joint, especially under dynamic loads and in corrosive environment. The use of non-boron filler metals based on the Ni-Si-Be system is proposed to eliminate this structure in the brazed seam. Widely used austenitic 12Cr18Ni10Ti and ferrite-martensitic 16Cr12MoSiWNiVNb reactor steels were selected for research and brazing was carried out. The mechanical characteristics of brazed joints were determined using uniaxial tensile and impact toughness tests, and fractography was investigated by electron microscopy.

  13. The effect of microalloying B on the High temperature mechanical properties of Ti3Al

    International Nuclear Information System (INIS)

    Newkirk, J.W.; Feldewerth, G.B.

    1989-01-01

    This paper presents a study of the effect of adding boron to Ti 3 Al on the microstructure and high temperature tensile properties. Boron caused a large grain refinement that dominated the tensile properties at all temperatures. Particles of Ti 2 B were found in all of the boron containing alloys. TiB was found only at concentrations of 0.1% B or more

  14. High-Pressure High-Temperature Phase Diagram of the Organic Crystal Paracetamol

    Science.gov (United States)

    Smith, Spencer; Montgomery, Jeffrey; Vohra, Yogesh

    High-pressure high-temperature (HPHT) Raman spectroscopy studies have been performed on the organic crystal paracetamol in a diamond anvil cell utilizing boron-doped diamond as heating anvil. The HPHT data obtained from boron-doped diamond heater is cross-checked with data obtained using a standard block heater diamond anvil cell. Isobaric measurements were conducted at pressures up to 8.5 GPa and temperature up to 520 K in a number of different experiments. Solid state phase transitions from monoclinic Form I --> orthorhombic Form II were observed at various pressures and temperatures as well as transitions from Form II --> unknown Form IV. The melting temperature for paracetamol was observed to increase with increasing pressures to 8.5 GPa. Our previous angle dispersive x-ray diffraction studies at the Advanced Photon Source has confirmed the existence of two unknown crystal structures Form IV and Form V of paracetamol at high pressure and ambient temperature. The phase transformation from Form II to Form IV occurs at ~8.5 GPa and from Form IV to Form V occurs at ~11 GPa at ambient temperature. Our new data is combined with the previous ambient temperature high-pressure Raman and X- ray diffraction data to create the first HPHT phase diagram of paracetamol. Doe-NNSA Carnegie DOE Alliance Center (CDAC) under Grant Number DE-NA0002006.

  15. Synergistic methods for the production of high-strength and low-cost boron carbide

    Science.gov (United States)

    Wiley, Charles Schenck

    2011-12-01

    sintering behavior were performed via high-temperature dilatometry in order to measure the in-situ sample contraction and thereby measure the influence of the additives and their amounts on the overall densification rate. Additionally, broad composition and sintering/post-HIPing studies followed by characterization and mechanical testing elucidated the effects of these additives on sample densification, microstructure de- velopment, and mechanical properties such as Vickers hardness and microindentation fracture toughness. Based upon this research, a process has been developed for the sintering of boron carbide that yielded end products with high relative densities (i.e., 100%, or theoretical density), microstructures with a fine (˜2-3 mum) grain size, and high Vickers microindentation hardness values. In addition to possessing these improved physical properties, the costs of producing this material were substantially lower (by a factor of 5 or more) than recently patented work on the pressureless sintering and post-HIPing of phase-pure boron carbide powder. This recently patented work developed out of our laboratory utilized an optimized powder distribution and yielded samples with high relative densities and high hardness values. The current work employed the use of titanium and carbon additives in specific ratios to activate the sintering of boron carbide powder possessing an approximately mono-modal particle size distribution. Upon heating to high temperatures, these additives produced fine-scale TiB2 and graphite inclusions that served to hinder grain growth and substantially improve overall sintered and post-HIPed densities when added in sufficient concentrations. The fine boron carbide grain size manifested as a result of these second phase inclusions caused a substantial increase in hardness; the highest hardness specimen yielded a hardness value (2884.5 kg/mm2) approaching that of phase-pure and theoretically-dense boron carbide (2939 kg/mm2). Additionally, the

  16. Modeling of the hot flow behavior of advanced ultra-high strength steels (A-UHSS) microalloyed with boron

    International Nuclear Information System (INIS)

    Mejía, I.; Altamirano, G.; Bedolla-Jacuinde, A.; Cabrera, J.M.

    2014-01-01

    In this research work, modeling of the hot flow behavior was carried out in a low carbon advanced ultra-high strength steels (A-UHSS) microalloyed with different amounts of boron (14, 33, 82, 126 and 214 ppm). For this purpose, experimental stress–strain data of uniaxial hot-compression tests over a wide range of temperatures (1223, 1273, 1323 and 1373 K (950, 1000, 1050 and 1100 °C)) and strain rates (10 −3 , 10 −2 and 10 −1 s −1 ) were used. The stress–strain relationships as a function of temperature and strain rate were successfully described on the basis of the approach proposed by Estrin, Mecking, and Bergström, together with the classical Avrami equation and the conventional hyperbolic sine function. The analysis of the modeling parameters of the hot flow curves shows that boron additions to A-UHSS play a major role in softening mechanisms rather than on hardening. The peak stress (σ p ) and steady-state stress (σ ss ) values show a decreasing trend with increasing boron content, which indicates that boron additions promote a solid solution softening effect additional to that produced by DRX. The time for 50% recrystallization (t 50% ) tends to increase with boron additions, revealing that boron additions cause a delay of the DRX kinetics during hot deformation. Similarly, the presence of boron in the steel decreases the apparent activation energy for recrystallization (Q t ), indicating that boron additions accelerate the onset of DRX. The constitutive equations developed in this way provided an excellent description of the experimental hot flow curves

  17. Hot ductility behavior of boron microalloyed steels

    International Nuclear Information System (INIS)

    Lopez-Chipres, E.; Mejia, I.; Maldonado, C.; Bedolla-Jacuinde, A.; Cabrera, J.M.

    2007-01-01

    The current study analyses the influence of boron contents (between 29 and 105 ppm) on the hot ductility of boron microalloyed steels. For this purpose, hot tensile tests were carried out at different temperatures (700, 800, 900 and 1000 deg. C) at a constant true strain rate of 0.001 s -1 . In general, results revealed an improvement of the hot ductility of steels at increasing boron content. At 700, 900 and 1000 deg. C the ductility is higher than at 800 deg. C, where boron microalloyed steels exhibit a region of ductility loss (trough region). Likewise, dynamic recrystallization only occurred at 900 and 1000 deg. C. The fracture surfaces of the tested steels at temperatures giving the high temperature ductility regime show that the fracture mode is a result of ductile failure, whereas it is ductile-brittle failure in the trough region. Results are discussed in terms of dynamic recrystallization and boron segregation towards austenite grain boundaries, which may retard the formation of pro-eutectoid ferrite and increase grain boundary cohesion

  18. Structural modifications induced by ion irradiation and temperature in boron carbide B4C

    Science.gov (United States)

    Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, J.; Pradeilles, N.; Rapaud, O.; Maître, A.; Gosset, D.

    2015-12-01

    Already used as neutron absorber in the current French nuclear reactors, boron carbide (B4C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B4C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (Se ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B4C structure under irradiation.

  19. Effects of austenitization temperature on the microstructure of 15BCr30 and PL22 boron steels

    Directory of Open Access Journals (Sweden)

    C. A. Suski

    2013-01-01

    Full Text Available This paper studies boron precipitation and segregation at austenitic grain boundaries for low carbon boron steels types: PL22 and 15BCr30. The following parameters were evaluated: percentage of martensite/bainite, size and nucleation sites of austenitic grains and precipitates sizes. Three austenitization temperatures were studied (870, 1050 and 1200 °C. The highest martensite percentage occurred for 1050 °C. Iron-borocarbides were detected at grain boundaries for all tested temperatures. At 870 °C the coarse iron-borocarbides are due to non-solubility and coalescence. The highest martensite percentage at 1050 °C is caused by the discrete precipitation of iron-borocarbides at austenitic grains boundaries. The discrete precipitation was due to the low non-equilibrium segregation of boron at grain boundaries. The low non-equilibrium segregation and the small grain size at 1050 °C reduce the total boron concentration at grain boundaries.

  20. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  1. The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

    Energy Technology Data Exchange (ETDEWEB)

    Aboy, Maria [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain)]. E-mail: marabo@tel.uva.es; Pelaz, Lourdes [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Marques, Luis A. [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Lopez, Pedro [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Barbolla, Juan [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Venezia, V.C. [Philips Research Leuven, Leuven (Belgium); Duffy, R. [Philips Research Leuven, Leuven (Belgium); Griffin, Peter B. [Stanford University, Stanford, CA (United States)

    2004-12-15

    Boron cluster formation and dissolution in high concentration B profiles and the role of Si interstitials in these processes are analyzed by kinetic non-lattice Monte Carlo atomistic simulations. For this purpose, we use theoretical structures as simplifications of boron implants into preamorphized Si, followed by low-temperature solid phase epitaxial (SPE) regrowth or laser thermal annealing process. We observe that in the presence of high B concentrations (above 10{sup 20} cm{sup -3}), significant deactivation occurs during high temperature anneal, even in the presence of only equilibrium Si interstitials. The presence of additional Si interstitials from an end of range (EOR) damage region accelerates the deactivation process and makes B deactivation slightly higher. We show that B deactivation and reactivation processes can be clearly correlated to the evolution of Si interstitial defects at the EOR. The minimum level of activation occurs when the Si interstitial defects at EOR dissolve or form very stable defects.

  2. Modeling of the hot flow behavior of advanced ultra-high strength steels (A-UHSS) microalloyed with boron

    Energy Technology Data Exchange (ETDEWEB)

    Mejía, I., E-mail: imejia@umich.mx [Instituto de Investigaciones Metalúrgicas, Universidad Michoacana de San Nicolás de Hidalgo, Edificio “U”, Ciudad Universitaria, 58066 Morelia, Michoacán (Mexico); Altamirano, G.; Bedolla-Jacuinde, A. [Instituto de Investigaciones Metalúrgicas, Universidad Michoacana de San Nicolás de Hidalgo, Edificio “U”, Ciudad Universitaria, 58066 Morelia, Michoacán (Mexico); Cabrera, J.M. [Departament de Ciència dels Materials i Enginyeria Metallúrgica, ETSEIB – Universitat Politècnica de Catalunya, Av. Diagonal 647, 08028 Barcelona (Spain); Fundació CTM Centre Tecnològic, Av. de las Bases de Manresa, 1, 08240 Manresa (Spain)

    2014-07-29

    In this research work, modeling of the hot flow behavior was carried out in a low carbon advanced ultra-high strength steels (A-UHSS) microalloyed with different amounts of boron (14, 33, 82, 126 and 214 ppm). For this purpose, experimental stress–strain data of uniaxial hot-compression tests over a wide range of temperatures (1223, 1273, 1323 and 1373 K (950, 1000, 1050 and 1100 °C)) and strain rates (10{sup −3}, 10{sup −2} and 10{sup −1} s{sup −1}) were used. The stress–strain relationships as a function of temperature and strain rate were successfully described on the basis of the approach proposed by Estrin, Mecking, and Bergström, together with the classical Avrami equation and the conventional hyperbolic sine function. The analysis of the modeling parameters of the hot flow curves shows that boron additions to A-UHSS play a major role in softening mechanisms rather than on hardening. The peak stress (σ{sub p}) and steady-state stress (σ{sub ss}) values show a decreasing trend with increasing boron content, which indicates that boron additions promote a solid solution softening effect additional to that produced by DRX. The time for 50% recrystallization (t{sub 50%}) tends to increase with boron additions, revealing that boron additions cause a delay of the DRX kinetics during hot deformation. Similarly, the presence of boron in the steel decreases the apparent activation energy for recrystallization (Q{sub t}), indicating that boron additions accelerate the onset of DRX. The constitutive equations developed in this way provided an excellent description of the experimental hot flow curves.

  3. Structural modifications induced by ion irradiation and temperature in boron carbide B{sub 4}C

    Energy Technology Data Exchange (ETDEWEB)

    Victor, G., E-mail: g.victor@ipnl.in2p3.fr [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pipon, Y.; Bérerd, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Institut Universitaire de Technologie (IUT) Lyon-1, Université Claude Bernard Lyon 1, 69622 Villeurbanne Cedex (France); Toulhoat, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); CEA-DEN, Saclay, 91191 Gif-sur-Yvette (France); Moncoffre, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Djourelov, N. [Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee blvd, BG-1784 Sofia (Bulgaria); ELI-NP, IFIN-HH, 30 Reactorului Str, MG-6 Bucharest-Magurele (Romania); Miro, S. [CEA-DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Baillet, J. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pradeilles, N.; Rapaud, O.; Maître, A. [SPCTS, UMR CNRS 7315, Centre Européen de la céramique, University of Limoges (France); Gosset, D. [CEA, Saclay, DMN-SRMA-LA2M, 91191 Gif-sur-Yvette (France)

    2015-12-15

    Already used as neutron absorber in the current French nuclear reactors, boron carbide (B{sub 4}C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B{sub 4}C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (S{sub e} ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B{sub 4}C structure under irradiation.

  4. Boron effects on creep rupture strength of W containing advanced ferritic creep resistant steels

    Energy Technology Data Exchange (ETDEWEB)

    Mito, N.; Hasegawa, Y. [Tohoku Univ., Sendai (Japan)

    2010-07-01

    The creep strength in ferritic creep resistant steels is increased by boron addition. However, the strengthening mechanisms have not yet been studied. This study clarifies the strengthening mechanism of 9% chromium steels with 10{proportional_to}100ppm boron and 0.5{proportional_to}2.0mass% tungsten in the laboratory. The strengthening effect of simultaneous addition of boron and tungsten was analyzed by hardenability, room-temperature strength and creep tests at 650 C. Changes in the microstructure as a result of the addition of boron and tungsten were also examined by optical microscope and transmission electron microscope (TEM). In addition, Alpha-ray Track Etching (ATE) method was used to detect the boron distribution and analyze the mechanisms change in the mechanical properties. Boron addition did not affect room-temperature strength, however, simultaneous addition of boron and tungsten increased room-temperature and high-temperature strength. According to ATE analysis, boron exists at the grain boundary. Therefore, synergistic effects of boron and tungsten on the creep strength suggest the tungsten precipitates stabilization by boron at the grain boundary. (orig.)

  5. Architecting boron nanostructure on the diamond particle surface

    International Nuclear Information System (INIS)

    Bai, H.; Dai, D.; Yu, J.H.; Nishimura, K.; Sasaoka, S.; Jiang, N.

    2014-01-01

    The present study provides an efficient approach for nano-functionalization of diamond powders. Boron nanostructure can be grown on diamond particle entire surface by a simple heat-treatment process. After treatment, various boron nanoforms were grown on the diamond particle surface at different processing temperature. High-density boron nanowires (BNWs) grow on the diamond particle entire surface at 1333 K, while nanopillars cover diamond powders when the heat treatment process is performed at 1393 K. The influence of the pretreatment temperature on the microstructure and thermal conductivity of Cu/diamond composites were investigated. Cu/diamond composites with high thermal conductivity of 670 W (m K) −1 was obtained, which was achieved by the formation of large number of nanowires and nanopillars on the diamond particle surface.

  6. High field magnetic behavior in Boron doped Fe{sub 2}VAl Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Venkatesh, Ch., E-mail: venkyphysicsiitm@gmail.com [Department of Physics, Indian Institute of Technology, Kharagpur (India); DCMP & MS, Tata Institute of Fundamental Research, Mumbai (India); Vasundhara, M., E-mail: vasu.mutta@gmail.com [Materials Science and Technology Division, National Institute for Interdisciplinary Science and Technology, CSIR, Trivandrum 695019 (India); Srinivas, V. [Department of Physics, Indian Institute of Technology, Chennai (India); Rao, V.V. [Cryogenic Engineering Centre, Indian Institute of Technology, Kharagpur (India)

    2016-11-15

    We have investigated the magnetic behavior of Fe{sub 2}VAl{sub 1−x}B{sub x} (x=0, 0.03, 0.06 and 0.1) alloys under high temperature and high magnetic field conditions separately. Although, the low temperature DC magnetization data for the alloys above x>0 show clear magnetic transitions, the zero field cooled (ZFC) and field cooled (FC) curves indicate the presence of spin cluster like features. Further, critical exponent (γ) deduced from the initial susceptibility above the T{sub c}, does not agree with standard models derived for 3 dimensional long range magnetic systems. The deviation in γ values are consistent with the short range magnetic nature of these alloys. We further extend the analysis of magnetic behavior by carrying the magnetization measurements at high temperatures and high magnetic fields distinctly. We mainly emphasize the following observations; (i) The magnetic hysteresis loops show sharp upturns at lower fields even at 900 K for all the alloys. (ii) High temperature inverse susceptibility do not overlap until T=900 K, indicating the persistent short range magnetic correlations even at high temperatures. (iii) The Arrott's plot of magnetization data shows spontaneous moment (M{sub S}) for the x=0 alloy at higher magnetic fields which is absent at lower fields (<50 kOe), while the Boron doped samples show feeble M{sub S} at lower fields. The origin of this short range correlation is due to presence of dilute magnetic heterogeneous phases which are not detected from the X-ray diffraction method. - Highlights: • Short range magnetic character has been confirmed by the critical exponents analysis. • Magnetoresistace is about −14% with non-saturating tendency even at 150 kOe for Fe{sub 2}VAl alloy. • Boron doped Fe{sub 2}VAl alloys show a weak magnetism even at T=900 K.

  7. Creep rupture properties under varying load/temperature conditions on a nickel-base heat-resistant alloy strengthened by boron addition

    International Nuclear Information System (INIS)

    Tsuji, Hirokazu; Tanabe, Tatsuhiko; Nakajima, Hajime

    1994-01-01

    A series of constant load and temperature creep rupture tests and varying load and temperature creep rupture tests was carried out on Hastelloy XR whose boron content level is 60 mass ppm at 900 and 1000 C in order to examine the behavior of the alloy under varying load and temperature conditions. The life fraction rule completely fails in the prediction of the creep rupture life under varying load and temperature conditions though the rule shows good applicability for Hastelloy XR whose boron content level is below 10 mass ppm. The modified life fraction rule has been proposed based on the dependence of the creep rupture strength on the boron content level of the alloy. The modified rule successfully predicts the creep rupture life under the test conditions from 1000 to 900 C. The trend observed in the tests from 900 to 1000 C can be qualitatively explained by the mechanism that the oxide film which is formed during the prior exposure to 900 C plays the role of the protective barrier against the boron dissipation into the environment. (orig.)

  8. Study on high-silicon boron-containing zeolite by thermogravimetric and IR-spectroscopy techniques

    International Nuclear Information System (INIS)

    Chukin, G.D.; Nefedov, B.K.; Surin, S.A.; Polinina, E.V.; Khusid, B.L.; Sidel'kovskaya, V.G.

    1985-01-01

    The structure identity of initial Na-forms of boron-containing and aluminosilicate high-silicon zeolites is established by thermogravimetric and IR-spectroscopy methods. The presence of boron in Na-forms of high-silicon zeolites is shown to lead to reduction of structure thermal stability. It is noted that thermal stability of the H-form of both high-silicon boron-containing and boron-free zeolites is practically equal and considerably higher than that of Na-forms

  9. Neutron physical investigations on the shutdown effect of small boronated absorbing spheres for pebble-bed high-temperature gas-cooled reactors

    International Nuclear Information System (INIS)

    Sgouridis, S.; Schurrer, F.; Muller, H.; Ninaus, W.; Oswald, K.; Neef, R.D.; Schaal, H.

    1987-01-01

    An emergency shutdown system for high-temperature gas-cooled pebble-bed reactors is proposed in addition to the common absorber rod shutdown system. This system is based on the strongly absorbing effect of small boronated graphite spheres (called KLAK), which trickle in case of emergency by gravity from the top reflector into the reactor core. The inner reflector of the Siemens-Argonaut reactor was substituted by an assembly of spherical Arbeitsgemeinschaft Versuchsreaktor fuel elements, and the shutdown effect was examined by installing well-defined KLAK nests inside this assembly. The purpose was to develop and prove a calculational procedure for determining criticality values for assemblies of large fuel spheres and small absorbing spheres

  10. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

    Energy Technology Data Exchange (ETDEWEB)

    Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

    2017-05-12

    The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

  11. Lipase-catalyzed highly enantioselective kinetic resolution of boron-containing chiral alcohols.

    Science.gov (United States)

    Andrade, Leandro H; Barcellos, Thiago

    2009-07-16

    The first application of enzymes as catalysts to obtain optically pure boron compounds is described. The kinetic resolution of boron-containing chiral alcohols via enantioselective transesterification catalyzed by lipases was studied. Aromatic, allylic, and aliphatic secondary alcohols containing a boronate ester or boronic acid group were resolved by lipase from Candida antartica (CALB), and excellent E values (E > 200) and high enantiomeric excesses (up to >99%) of both remaining substrates and acetylated product were obtained.

  12. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

    NARCIS (Netherlands)

    Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

    2011-01-01

    We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early

  13. High-pressure high-temperature phase diagram of organic crystal paracetamol

    Science.gov (United States)

    Smith, Spencer J.; Montgomery, Jeffrey M.; Vohra, Yogesh K.

    2016-01-01

    High-pressure high-temperature (HPHT) Raman spectroscopy studies have been performed on the organic crystal paracetamol in a diamond anvil cell utilizing boron-doped heating diamond anvil. Isobaric measurements were conducted at pressures up to 8.5 GPa and temperature up to 520 K in five different experiments. Solid state phase transitions from monoclinic Form I  →  orthorhombic Form II were observed at various pressures and temperatures as well as transitions from Form II  →  unknown Form IV. The melting temperature for paracetamol was observed to increase with increasing pressures to 8.5 GPa. This new data is combined with previous ambient temperature high-pressure Raman and x-ray diffraction data to create the first HPHT phase diagram of paracetamol.

  14. High-pressure high-temperature phase diagram of organic crystal paracetamol

    International Nuclear Information System (INIS)

    Smith, Spencer J; Montgomery, Jeffrey M; Vohra, Yogesh K

    2016-01-01

    High-pressure high-temperature (HPHT) Raman spectroscopy studies have been performed on the organic crystal paracetamol in a diamond anvil cell utilizing boron-doped heating diamond anvil. Isobaric measurements were conducted at pressures up to 8.5 GPa and temperature up to 520 K in five different experiments. Solid state phase transitions from monoclinic Form I  →  orthorhombic Form II were observed at various pressures and temperatures as well as transitions from Form II  →  unknown Form IV. The melting temperature for paracetamol was observed to increase with increasing pressures to 8.5 GPa. This new data is combined with previous ambient temperature high-pressure Raman and x-ray diffraction data to create the first HPHT phase diagram of paracetamol. (paper)

  15. Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vinod, E-mail: vinod.phy@gmail.com [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Physics, Gurukula Kangri University, Haridwar 249404 (India); Singh, R.G. [Department of Electronic Science, Maharaja Agrasen College University of Delhi, New Delhi 110096 (India); Singh, Fouran [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Purohit, L.P. [Department of Physics, Gurukula Kangri University, Haridwar 249404 (India)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Synthesis of Boron doped ZnO (ZnO:B) films. Black-Right-Pointing-Pointer Minimum of resistivity is observed to be 7.9 Multiplication-Sign 10{sup -4} {Omega} cm. Black-Right-Pointing-Pointer Maximum transmittance {approx}91% for 450 Degree-Sign C annealed films. Black-Right-Pointing-Pointer Applicable for window materials in Dye Sensitized Solar Cell. - Abstract: Highly transparent and conducting boron doped zinc oxide (ZnO:B) films grown by sol-gel method are reported. The annealing temperature is varied from 350 to 550 Degree-Sign C and doping concentration of boron is kept fixed for 0.6 at.% for all the films. At low temperature the stress in the films is compressive, which becomes tensile for the films annealed at higher temperature. A minimum resistivity of 7.9 Multiplication-Sign 10{sup -4} {Omega} cm and maximum transmittance of {approx}91% are observed for the film annealed at 450 Degree-Sign C. This could be attributed to minimum stress of films, which is further evident by the evolution of A{sub 1} and defect related Raman modes without any shifting in its position. Such kind of highly transparent and conducting ZnO:B thin film could be used as window material in Dye Sensitized Solar Cell (DSSC).

  16. Boronic ionogel electrolytes to improve lithium transport for Li-ion batteries

    International Nuclear Information System (INIS)

    Lee, Albert S.; Lee, Jin Hong; Hong, Soon Man; Lee, Jong-Chan; Hwang, Seung Sang; Koo, Chong Min

    2016-01-01

    Boron containing ionogels were fabricated through chemical crosslinking of boron allyloxide with polyethylene glycol dimethacrylate in an ionic liquid electrolyte solution to obtain mechanically robust gels. Because of the relatively small concentration of crosslinking agent required to fully solidify the ionic liquid electrolyte, good characters of high ionic conductivity, high thermal stability, and good electrochemical stability were observed. A spectroscopic investigation of the boronic ionogels revealed that the lithium mobility was noticeably enhanced compared with ionogels fabricated without the boronic crosslinker, leading to promising Li-ion battery performance at elevated temperatures.

  17. Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-ray Emission Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Muramatsu, Yasuji; Iihara, Junji; Takebe, Toshihiko; Denlinger, Jonathan D.

    2008-03-29

    To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.

  18. Boron effect on plasticity of austenite chromium-nickel-manganese steel with nitrogen

    International Nuclear Information System (INIS)

    Bulat, S.I.; Sorokina, N.A.; Ul'yanin, E.A.

    1975-01-01

    Plasticity of the stainless steels, with boron content changing from 0 to 0.13% is investigated. It follows from the test results that when the boron content amounts to 0.001 - 0.005%, plasticity of the steel rises at temperatures from 800 to 1000 deg C. When the boron content is higher, plasticity of the steel drops down, particularly at a temperature of 1000 deg C. Due to high sensitivity of the test steel to overheating at temperatures above 1260 deg C, the temperatures of 1240 -1260 deg C are considered to be the optimum for ingot heating, provided that the ingots are preliminarily held at the first stage of heating at a temperature of 1200 - 1220 deg C

  19. Experimental determination of boron and carbon thermodynamic activities in the carbide phase of the boron-carbon system

    International Nuclear Information System (INIS)

    Froment, A.K.

    1990-01-01

    - The boron-carbon phase diagram presents a single phase area ranging from 9 to 20 atomic percent of carbon. The measurement of carbon activity, in this range of composition, has been measured according to the following methods: - quantitative analysis of the methane-hydrogen mixture in equilibrium with the carbide, - high temperature mass spectrometry measurements. The first method turned out to be a failure; however, the apparatus used enabled the elaboration of a B 4 C composition pure phase from a two-phase (B 4 C + graphite) industrial product. The results obtained with the other two methods are consistent and lead to a law expressing the increase of the carbon activity in relation with the amount of this element; the high temperature mass spectrometry method has also made it possible to measure the boron activity which decreases when the carbon activity increases, but with a variation of amplitude much lower, according to the theoretical calculations. These results are a first step towards the knowledge of the boron carbide thermodynamical data for compositions different from B 4 C [fr

  20. Preparation of high-pressure phase boron nitride films by physical vapor deposition

    CERN Document Server

    Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

    2002-01-01

    The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

  1. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  2. Boron enhances strength and alters mineral composition of bone in rabbits fed a high energy diet.

    Science.gov (United States)

    Hakki, Sema S; Dundar, Niyazi; Kayis, Seyit Ali; Hakki, Erdogan E; Hamurcu, Mehmet; Kerimoglu, Ulku; Baspinar, Nuri; Basoglu, Abdullah; Nielsen, Forrest H

    2013-04-01

    An experiment was performed to determine whether boron had a beneficial effect on bone strength and composition in rabbits with apparent adiposity induced by a high energy diet. Sixty female New Zealand rabbits, aged 8 months, were randomly divided into five groups with the following treatments for seven months: control 1, fed alfalfa hay only (5.91 MJ/kg); control 2, high energy diet (11.76 MJ and 3.88 mg boron/kg); B10, high energy diet+10 mg/kg body weight boron gavage/96 h; B30, high energy diet+30 mg/kg body weight boron gavage/96 h; B50, high energy diet+50mg/kg body weight boron gavage/96 h. Bone boron concentrations were lowest in rabbits fed the high energy diet without boron supplementation, which suggested an inferior boron status. Femur maximum breaking force was highest in the B50 rabbits. Tibia compression strength was highest in B30 and B50 rabbits. All boron treatments significantly increased calcium and magnesium concentrations, and the B30 and B50 treatments increased the phosphorus concentration in tibia of rabbits fed the high energy diet. The B30 treatment significantly increased calcium, phosphorus and magnesium concentrations in femur of rabbits fed the high energy diet. Principal component analysis of the tibia minerals showed that the three boron treatments formed a separate cluster from controls. Discriminant analysis suggested that the concentrations of the minerals in femur could predict boron treatment. The findings indicate boron has beneficial effects on bone strength and mineral composition in rabbits fed a high energy diet. Copyright © 2012 Elsevier GmbH. All rights reserved.

  3. Preparation of boron-rich aluminum boride nanoparticles by RF thermal plasma

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Sooseok [Inha University, Department of Chemical Engineering and Regional Innovation Center for Environmental Technology of Thermal Plasma (Korea, Republic of); Matsuo, Jiro; Cheng, Yingying [Tokyo Institute of Technology, Department of Environmental Chemistry and Engineering (Japan); Watanabe, Takayuki, E-mail: watanabe@chemenv.titech.ac.jp [Kyushu University, Department of Chemical Engineering (Japan)

    2013-08-15

    Boron-rich compounds of AlB{sub 12} and AlB{sub 10} nanoparticles were synthesized by a radiofrequency thermal plasma. Aluminum and boron raw powders were evaporated in virtue of high enthalpy of the thermal plasma in upstream region, followed by the formation of aluminum boride nanoparticles in the tail region of plasma flame with rapid quenching. A high production rate of aluminum boride was confirmed by the X-ray diffraction measurement in the case of high input power, high boron content in raw material and helium inner gas. Polyhedral nanoparticles of 20.8 nm in mean size were observed by a transmission electron microscope. In the raw powder mixture of aluminum, titanium, and boron, titanium-boride nanoparticles were synthesized preferentially, because the Gibbs free energy for the boridation of titanium is lower than that of aluminum. Since the nucleation temperature of boron is higher than that of aluminum, the condensation of metal monomers onto boron nuclei results in the formation of boron-rich aluminum boride nanoparticles.

  4. Microstructure and mechanical properties of a new type of austempered boron alloyed high silicon cast steel

    Directory of Open Access Journals (Sweden)

    Chen Xiang

    2013-05-01

    Full Text Available In the present paper, a new type of austempered boron alloyed high silicon cast steel has been developed, and its microstructures and mechanical properties at different temperatures were investigated. The experimental results indicate that the boron alloyed high silicon cast steel comprises a dendritic matrix and interdendritic eutectic borides in as-cast condition. The dendritic matrix is made up of pearlite, ferrite, and the interdendritic eutectic boride is with a chemical formula of M2B (M represents Fe, Cr, Mn or Mo which is much like that of carbide in high chromium white cast iron. Pure ausferrite structure that consists of bainitic ferrite and retained austenite can be obtained in the matrix by austempering treatment to the cast steel. No carbides precipitate in the ausferrite structure and the morphology of borides remains almost unchanged after austempering treatments. Secondary boride particles precipitate during the course of austenitizing. The hardness and tensile strength of the austempered cast steel decrease with the increase of the austempering temperature, from 250 篊 to 400 篊. The impact toughness is 4-11 J昪m-2 at room temperature and the impact fracture fractogragh indicates that the fracture is caused by the brittle fracture of the borides.

  5. Effect of boron oxide on the cubic-to-monoclinic phase transition in yttria-stabilized zirconia

    International Nuclear Information System (INIS)

    Florio, D.Z. de; Muccillo, R.

    2004-01-01

    Specimens of yttria fully stabilized zirconia with different amounts of boron oxide have been studied by X-ray diffraction at room temperature and at higher temperatures up to 1250 deg. C. A boron oxide-assisted cubic-to-monoclinic phase transformation was determined in the temperature range 800-1250 deg. C. In situ high temperature X-ray diffraction experiments gave evidences of the dependence of the phase transformation on the heating rate. The possibility of tuning the cubic-monoclinic phase ratio by suitable addition of boron oxide before pressing and sintering is proposed

  6. The determination of boron in aluminium of high purity

    International Nuclear Information System (INIS)

    Cook, E.B.T.; Holan, H.

    1977-01-01

    A description is given of the investigations that led to the development of chemical methods for the determination of boron within the range 0,25 to 1,0 p.p.m. in aluminium of high purity. Methods were developed that incorporated fluorimetry, directly in solutions containing aluminium and after separation of boron by liquid-liquid extraction into 2-ethyl-1,3 hexanediol. A published spectrophotometric method, involving extraction of the BF 4 sup(-) complex with methylene blue into dichloroethane, was modified for application to alluminium samples. Details of this modified procedure and the fluorimetric-extraction procedure are appended. The precision of the methylene-blue method is about 6 percent relative and is recommended for precision and speed in preference to others. Separation of boron by distillation and spectrophotometric determination with curcumin gave low values in comparison with those obtained by the other methods. Agreement between the boron values obtained on the samples tested was good for the fluorimetric and methylene-blue spectrophotometric methods

  7. Boron-Based Hydrogen Storage: Ternary Borides and Beyond

    Energy Technology Data Exchange (ETDEWEB)

    Vajo, John J. [HRL Laboratories, LLC, Malibu, CA (United States)

    2016-04-28

    DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slow rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.

  8. Determination of boron in uranium and aluminium by high pressure liquid chromatography (HPLC)

    International Nuclear Information System (INIS)

    Rao, Radhika M.; Aggarwal, S.K.

    2003-01-01

    Experiments were conducted for the determination of boron in U 3 O 8 powder and aluminium metal using dynamically modified reversed phase high pressure liquid chromatography (RP-HPLC) and using precolumn chromogenic agent viz. curcumin for complexing boron. The complex was separated from the excess of reagent and determined by HPLC. The boron curcumin complex (rosocyanin) was formed after extraction of boron with 2-ethyl-1,3-hexane diol (EHD). Linear calibration curves for boron amounts in the range of 0.02 μg to 0.5 μg were developed and used for the determination of boron in aluminium and uranium samples. (author)

  9. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    high temperature reaction between elemental boron and car- bon to form B4C is .... cible was used as the container for the electrolyte and also acted as an anode. ... chosen as cathode due to its availability, low cost, ease of fabrication and ...

  10. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-05

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  11. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  12. Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

    International Nuclear Information System (INIS)

    Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

    1991-01-01

    Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

  13. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C.

    1998-01-01

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B + , the threshold implantation dose which leads to BED lies between 3 x 10 14 and of 1 x 10 15 /cm -2 . Formation of the shallowest possible junctions by 0.5 keV B + requires that the implant dose be kept lower than this threshold

  14. Continuous growth of low-temperature Si epitaxial layer with heavy phosphorous and boron doping using photoepitaxy

    International Nuclear Information System (INIS)

    Yamazaki, T.; Minakata, H.; Ito, T.

    1990-01-01

    The authors grew p + -n + silicon epitaxial layers, heavily doped with phosphorus and boron, continuously at 650 degrees C using low-temperature photoepitaxy. Then N + photoepitaxial layer with a phosphorus concentration above 10 17 cm -3 grown on p - substrate shows high-density surface pits, and as a result, poor crystal quality. However, when this n + photoepitaxial layer is grown continuously on a heavily boron-doped p + photoepitaxial layer, these surface pits are drastically decreased, disappearing completely above a hole concentration of 10 19 cm -3 in the p + photoepitaxial layer. The phosphorus activation ratio and electron Hall mobility in the heavily phosphorus-doped n + photoexpitaxial layer were also greatly improved. The authors investigated the cause of the surface pitting using a scanning transmission electron microscope, secondary ion mass spectroscopy, and energy-dispersive x-ray spectroscopy. They characterized the precipitation of phosphorus atoms on the crystal surface at the initial stage of the heavily phosphorus-doped n + photoexpitaxial layer growth

  15. Lattice dynamics of α boron and of boron carbide

    International Nuclear Information System (INIS)

    Vast, N.

    1999-01-01

    The atomic structure and the lattice dynamics of α boron and of B 4 C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In α boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B 4 C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  16. Disorder and defects are not intrinsic to boron carbide

    Science.gov (United States)

    Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

  17. Seeded growth of boron arsenide single crystals with high thermal conductivity

    Science.gov (United States)

    Tian, Fei; Song, Bai; Lv, Bing; Sun, Jingying; Huyan, Shuyuan; Wu, Qi; Mao, Jun; Ni, Yizhou; Ding, Zhiwei; Huberman, Samuel; Liu, Te-Huan; Chen, Gang; Chen, Shuo; Chu, Ching-Wu; Ren, Zhifeng

    2018-01-01

    Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1 K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1 K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.

  18. Creep rupture properties under varying load/temperature conditions on a nickel-base heat-resistant alloy strengthened by boron addition

    International Nuclear Information System (INIS)

    Tsuji, Hirokazu; Nakajima, Hajime; Tanabe, Tatsuhiko.

    1993-09-01

    A series of constant load and temperature creep rupture tests and varying load and temperature creep rupture tests was carried out on Hastelloy XR whose boron content level is 60 mass ppm at 900 and 1000degC in order to examine the behavior of the alloy under varying load and temperature conditions. The life fraction rule completely fails in the prediction of the creep rupture life under varying load and temperature conditions though the rule shows good applicability for Hastelloy XR whose boron content level is below 10 mass ppm. The modified life fraction rule has been proposed based on the dependence of the creep rupture strength on the born content level of the alloy. The modified rule successfully predicts the creep rupture life under the test conditions from 1000degC to 900degC. The trend observed in the tests from 900degC to 1000degC can be qualitatively explained by the mechanism that the oxide film which is formed during the prior exposure to 900degC plays the role of the protective barrier against the boron dissipation into the environment. (author)

  19. Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

    Directory of Open Access Journals (Sweden)

    Qi Wang

    2013-07-01

    Full Text Available In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM of only 29.5 meV. In addition, a slight blue-shift (∼18 meV of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%, the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.

  20. Discharge cleaning on TFTR after boronization

    International Nuclear Information System (INIS)

    Mueller, D.; Dylla, H.F.; LaMarche, P.H.; Bell, M.G.; Blanchard, W.; Bush, C.E.; Gentile, C.; Hawryluk, R.J.; HIll, K.W.; Janos, A.C.; Jobes, F.C; Owens, D.K.; Pearson, G.; Schivell, J.; Ulrickson, M.A.; Vannoy, C.; Wong, K.L.

    1991-05-01

    At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 10 5 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

  1. Turbostratic boron nitride coated on high-surface area metal oxide templates

    DEFF Research Database (Denmark)

    Klitgaard, Søren Kegnæs; Egeblad, Kresten; Brorson, M.

    2007-01-01

    Boron nitride coatings on high-surface area MgAl2O4 and Al2O3 have been synthesized and characterized by transmission electron microscopy and by X-ray powder diffraction. The metal oxide templates were coated with boron nitride using a simple nitridation in a flow of ammonia starting from ammonium...

  2. Preparation and electrical properties of boron and boron phosphide films obtained by gas source molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumashiro, Y.; Yokoyama, T.; Sakamoto, T.; Fujita, T. [Yokohama National Univ. (Japan)

    1997-10-01

    Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800{degrees}C using cracked B{sub 2}H{sub 6} (2% in H{sub 2}) at 300{degrees}C and cracked PH{sub 3} (20% in H{sub 2}) at 900{degrees}C. The substrate temperatures and gas flow rates of the reactant gases determined the film growth. The boron films with amorphous structure are p type. Increasing growth times lead to increasing mobilities and decreasing carrier concentrations. Boron phosphide film with maximum P/B ratio is obtained at a substrate temperature of 600{degrees}C, below and above which they become phosphorous deficient due to insufficient supply of phosphorus and thermal desorption of the phosphorus as P{sub 2}, respectively, but they are all n type conductors due to phosphorus vacancies.

  3. Static and Dynamic Behavior of High Modulus Hybrid Boron/Glass/Aluminum Fiber Metal Laminates

    Science.gov (United States)

    Yeh, Po-Ching

    2011-12-01

    This dissertation presents the investigation of a newly developed hybrid fiber metal laminates (FMLs) which contains commingled boron fibers, glass fibers, and 2024-T3 aluminum sheets. Two types of hybrid boron/glass/aluminum FMLs are developed. The first, type I hybrid FMLs, contained a layer of boron fiber prepreg in between two layers of S2-glass fiber prepreg, sandwiched by two aluminum alloy 2024-T3 sheets. The second, type II hybrid FMLs, contained three layer of commingled hybrid boron/glass fiber prepreg layers, sandwiched by two aluminum alloy 2024-T3 sheets. The mechanical behavior and deformation characteristics including blunt notch strength, bearing strength and fatigue behavior of these two types of hybrid boron/glass/aluminum FMLs were investigated. Compared to traditional S2-glass fiber reinforced aluminum laminates (GLARE), the newly developed hybrid boron/glass/aluminum fiber metal laminates possess high modulus, high yielding stress, and good blunt notch properties. From the bearing test result, the hybrid boron/glass/aluminum fiber metal laminates showed outstanding bearing strength. The high fiber volume fraction of boron fibers in type II laminates lead to a higher bearing strength compared to both type I laminates and traditional GLARE. Both types of hybrid FMLs have improved fatigue crack initiation lives and excellent fatigue crack propagation resistance compared to traditional GLARE. The incorporation of the boron fibers improved the Young's modulus of the composite layer in FMLs, which in turn, improved the fatigue crack initiation life and crack propagation rates of the aluminum sheets. Moreover, a finite element model was established to predict and verify the properties of hybrid boron/glass/aluminum FMLs. The simulated results showed good agreement with the experimental results.

  4. Ion implantation of boron in germanium

    International Nuclear Information System (INIS)

    Jones, K.S.

    1985-05-01

    Ion implantation of 11 B + into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of 11 B + into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10 11 /cm 2 to 1 x 10 14 /cm 2 ) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses ( 12 /cm 2 ). Three damage related hole traps are produced by ion implantation of 11 B + . Two of these hole traps have also been observed in γ-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures ( 0 C). Boron, from room temperature implantation of BF 2 + into Ge, is not substitutionally active prior to a post implant annealing step of 250 0 C for 30 minutes. After annealing additional shallow acceptors are observed in BF 2 + implanted samples which may be due to fluorine or flourine related complexes which are electrically active

  5. Boron mediation on the growth of Ge quantum dots on Si (1 0 0) by ultra high vacuum chemical vapor deposition system

    International Nuclear Information System (INIS)

    Chen, P.S.; Pei, Z.; Peng, Y.H.; Lee, S.W.; Tsai, M.-J.

    2004-01-01

    Self-assembled Ge quantum dots (QDs) with boron mediation are grown on Si (1 0 0) by an industrial hot wall ultra-high-vacuum chemical vapor deposition (UHV/CVD) system with different growth temperatures and dopant gas flow rates. Diborane (B 2 H 6 ) gas is applied as a surfactant on the Si (1 0 0) prior to the growth of Ge QDs. Small dome and pyramid shaped Ge QDs are observed after boron treatment as compared to the hut shaped Ge cluster without boron pre-treatment at 525 and 550 deg. C. The Ge QDs have a typical base width and height of about 30 and 6 nm, respectively, and the density is about 2.5x10 10 cm -2 for the growth temperature of 525 deg. C. Through weakening the Si-H bond during the epitaxy growth and changing the stress field on the surface of the Si (1 0 0) buffer, boron mediation can modify the growth mode of Ge QDs. When the growth temperature is low (525-550 deg. C), the former factor is dominate, as the growth temperature is raised (600 deg. C), the latter parameter may play an important role on the formation of Ge QDs. Optical transition from Ge QDs is demonstrated from photoluminescence (PL) spectra. Furthermore, multifold Ge/Si layers are also carried out to enhance the PL intensity with first Ge layer treated by B 2 H 6 and avoid the generation of threading dislocations

  6. Short-term coral bleaching is not recorded by skeletal boron isotopes.

    Science.gov (United States)

    Schoepf, Verena; McCulloch, Malcolm T; Warner, Mark E; Levas, Stephen J; Matsui, Yohei; Aschaffenburg, Matthew D; Grottoli, Andréa G

    2014-01-01

    Coral skeletal boron isotopes have been established as a proxy for seawater pH, yet it remains unclear if and how this proxy is affected by seawater temperature. Specifically, it has never been directly tested whether coral bleaching caused by high water temperatures influences coral boron isotopes. Here we report the results from a controlled bleaching experiment conducted on the Caribbean corals Porites divaricata, Porites astreoides, and Orbicella faveolata. Stable boron (δ11B), carbon (δ13C), oxygen (δ18O) isotopes, Sr/Ca, Mg/Ca, U/Ca, and Ba/Ca ratios, as well as chlorophyll a concentrations and calcification rates were measured on coral skeletal material corresponding to the period during and immediately after the elevated temperature treatment and again after 6 weeks of recovery on the reef. We show that under these conditions, coral bleaching did not affect the boron isotopic signature in any coral species tested, despite significant changes in coral physiology. This contradicts published findings from coral cores, where significant decreases in boron isotopes were interpreted as corresponding to times of known mass bleaching events. In contrast, δ13C and δ18O exhibited major enrichment corresponding to decreases in calcification rates associated with bleaching. Sr/Ca of bleached corals did not consistently record the 1.2°C difference in seawater temperature during the bleaching treatment, or alternatively show a consistent increase due to impaired photosynthesis and calcification. Mg/Ca, U/Ca, and Ba/Ca were affected by coral bleaching in some of the coral species, but the observed patterns could not be satisfactorily explained by temperature dependence or changes in coral physiology. This demonstrates that coral boron isotopes do not record short-term bleaching events, and therefore cannot be used as a proxy for past bleaching events. The robustness of coral boron isotopes to changes in coral physiology, however, suggests that reconstruction of

  7. Real-time boronization in PBX-M using erosion of solid boronized targets

    International Nuclear Information System (INIS)

    Kugel, H.W.; Timberlake, J.; Bell, R.; LeBlanc, B.; Okabayashi, M.; Paul, S.; Tighe, W.; Hirooka, Y.

    1994-11-01

    Thirty one real-time boronizations were applied to PBX-M using the plasma erosion of solid target probes. More than 17 g of boron were deposited in PBX-M using this technique. The probes were positioned at the edge plasma to optimize vaporization and minimize spallation. Auger depth profile analysis of poloidal and toroidal deposition sample coupon arrays indicate that boron was transported by the plasma around the torus and deep into the divertors. During discharges with continuous real-time boronization, low-Z and high-Z impurities decreased rapidly as plasma surfaces were covered during the first 20-30 discharges. After boronization, a short-term improvement in plasma conditions persisted prior to significant boron erosion from plasma surfaces, and a longer term, but less significant improvement persisted as boron farther from the edge continued gettering. Real-time solid target boronization has been found to be very effective for accelerating conditioning to new regimes and maintaining high performance plasma conditions

  8. Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

    International Nuclear Information System (INIS)

    Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

    2013-01-01

    In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

  9. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  10. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum

  11. Anomaly of the temperature dependence and nature of the optical absorption band in the 8 μm region in β-rhombohedral boron

    International Nuclear Information System (INIS)

    Yarovaya, R.G.; Tsomaya, K.P.; Gabuniya, D.L.; Nguen Van Doaj.

    1978-01-01

    Temperature dependence of reflection spectra of massive specimens of β-rhombohedral boron in the 7-10 μ region is studied. The specimen were heated from 20 to 450 C deg C in the air. Reflection spectra were measured in reference to standards of non-transparent layers of gold on the glass substrate with the reflection coefficient equal to 98%. Temperature increase was found to result in weakening reflection maximum in the spectral region under investigation and its abnormally fast shifting within the temperature range of 170-350 deg C. In measuring reflection and transmission spectra of B 2 O 3 layers deposited on the boron and rock-salt surfaces it is shown that the reflection peak under study does not involve the oxidation of the boron surface. This peak is supposed to be connected with the existance of inpure oxygen in the bulk

  12. High resolution imaging of boron carbide microstructures

    International Nuclear Information System (INIS)

    MacKinnon, I.D.R.; Aselage, T.; Van Deusen, S.B.

    1986-01-01

    Two samples of boron carbide have been examined using high resolution transmission electron microscopy (HRTEM). A hot-pressed B 13 C 2 sample shows a high density of variable width twins normal to (10*1). Subtle shifts or offsets of lattice fringes along the twin plane and normal to approx.(10*5) were also observed. A B 4 C powder showed little evidence of stacking disorder in crystalline regions

  13. Determination of trace amounts of boron in steel by high frequency plasma torch spectrometry

    International Nuclear Information System (INIS)

    Akiyoshi, Takanori; Tsukamoto, Takako

    1978-01-01

    Trace amount of boron in steel were determined by means of emission spectrometry using high frequency plasma torch. The sensitivity of this method depended on the kind of solvent used, and methyl alcohol gave the best sensitivity. The determination limit of boron in methanol was 0.002 μg/ml. The established method utilized the high sensibility of the plasma torch and the easy distillation of boron in methanol as trimethyl-borate (B(OCH 3 ) 3 ). The sample was dissolved by acids and dehydrated by hot H 2 SO 4 and H 3 Po 4 . After cooling and addition of methanol (60 ml), the solution was distilled to obtain 40 ml of the distillate. The amount of boron in the distillate was determined by the intensity of the spectral line of B 2497.73 A excited by plasma torch. This method was rapid and accurate, particularly in determining trace amounts of boron and the determination range of boron in steel was 0.2 to 150 ppm. This method was also appliciable to stainless steels and other alloys. (auth.)

  14. High-pressure boron hydride phases

    International Nuclear Information System (INIS)

    Barbee, T.W. III; McMahan, A.K.; Klepeis, J.E.; van Schilfgaarde, M.

    1997-01-01

    The stability of boron-hydrogen compounds (boranes) under pressure is studied from a theoretical point of view using total-energy methods. We find that the molecular forms of boranes known to be stable at ambient pressure become unstable at high pressure, while structures with extended networks of bonds or metallic bonding are energetically favored at high pressures. If such structures are metastable on return to ambient pressure, they would be energetic as well as dense hydrogen storage media. An AlH 3 -like structure of BH 3 is particularly interesting in that it may be accessible by high-pressure diamond anvil experiments, and should exhibit both second-order structural and metal-insulator transitions at lower pressures. copyright 1997 The American Physical Society

  15. Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

    Science.gov (United States)

    Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

    2018-01-01

    Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

  16. Boron-based nanostructures: Synthesis, functionalization, and characterization

    Science.gov (United States)

    Bedasso, Eyrusalam Kifyalew

    Boron-based nanostructures have not been explored in detail; however, these structures have the potential to revolutionize many fields including electronics and biomedicine. The research discussed in this dissertation focuses on synthesis, functionalization, and characterization of boron-based zero-dimensional nanostructures (core/shell and nanoparticles) and one-dimensional nanostructures (nanorods). The first project investigates the synthesis and functionalization of boron-based core/shell nanoparticles. Two boron-containing core/shell nanoparticles, namely boron/iron oxide and boron/silica, were synthesized. Initially, boron nanoparticles with a diameter between 10-100 nm were prepared by decomposition of nido-decaborane (B10H14) followed by formation of a core/shell structure. The core/shell structures were prepared using the appropriate precursor, iron source and silica source, for the shell in the presence of boron nanoparticles. The formation of core/shell nanostructures was confirmed using high resolution TEM. Then, the core/shell nanoparticles underwent a surface modification. Boron/iron oxide core/shell nanoparticles were functionalized with oleic acid, citric acid, amine-terminated polyethylene glycol, folic acid, and dopamine, and boron/silica core/shell nanoparticles were modified with 3-(amino propyl) triethoxy silane, 3-(2-aminoethyleamino)propyltrimethoxysilane), citric acid, folic acid, amine-terminated polyethylene glycol, and O-(2-Carboxyethyl)polyethylene glycol. A UV-Vis and ATR-FTIR analysis established the success of surface modification. The cytotoxicity of water-soluble core/shell nanoparticles was studied in triple negative breast cancer cell line MDA-MB-231 and the result showed the compounds are not toxic. The second project highlights optimization of reaction conditions for the synthesis of boron nanorods. This synthesis, done via reduction of boron oxide with molten lithium, was studied to produce boron nanorods without any

  17. The irradiation behaviour of boron carbide/graphite between 800 and 1,1000C

    International Nuclear Information System (INIS)

    Hattenbach, K.; Hilgendorff, W.; Weiler, K.; Zimmermann, H.U.

    1975-01-01

    64 samples of boron carbide/graphite, a material used as burnable poison in high temperature reactors, were irradiated at temperatures between 800 and 1,100 0 C up to a fluence of 1-2 x 10 20 nvt. The following post-investigations were extended to dimensional measurements to determime a possible swelling or shrinking of the pellet, corrosion tests in completely desalinated water at 300 0 C, preparation of metallographic microsections to check for crack formation, determination of the helium hold back power and the thus involved gas chromatic analysis, as well as burn-up determinations by determining the boron 10/boron 11 ratio and the lithium concentration. (orig./LN) [de

  18. β-Rhombohedral Boron: At the Crossroads of the Chemistry of Boron and the Physics of Frustration [Boron: a frustrated element

    Energy Technology Data Exchange (ETDEWEB)

    Ogitsu, Tadashi [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Schwegler, Eric [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Galli, Giulia [Univ. of California, Davis, CA (United States)

    2013-05-08

    In the periodic table boron occupies a peculiar, crossover position: on the first row, it is surrounded by metal forming elements on the left and by non-metals on the right. In addition, it is the only non-metal of the third column. Therefore it is perhaps not surprising that the crystallographic structure and topology of its stable allotrope at room temperature (β-boron) are not shared by any other element, and are extremely complex. The formidable intricacy of β- boron, with interconnecting icosahedra, partially occupied sites, and an unusually large number of atoms per unit cell (more than 300) has been known for more than 40 years. Nevertheless boron remains the only element purified in significant quantities whose ground state geometry has not been completely determined by experiments. However theoretical progress reported in the last decade has shed light on numerous properties of elemental boron, leading to a thorough characterization of its structure at ambient conditions, as well as of its electronic and thermodynamic properties. This review discusses in detail the properties of β-boron, as inferred from experiments and the ab-initio theories developed in the last decade.

  19. Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

    International Nuclear Information System (INIS)

    Li Shang-Sheng; Li Xiao-Lei; Su Tai-Chao; Jia Xiao-Peng; Ma Hong-An; Huang Guo-Feng; Li Yong

    2011-01-01

    High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond. (cross-disciplinary physics and related areas of science and technology)

  20. Photoluminescence properties of boron doped InSe single crystals

    International Nuclear Information System (INIS)

    Ertap, H.; Bacıoğlu, A.; Karabulut, M.

    2015-01-01

    Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed

  1. Boron reclamation

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-07-01

    A process to recover high purity 10 B enriched crystalline boron powder from a polymeric matrix was developed on a laboratory basis and ultimately scaled up to production capacity. The process is based on controlled pyrolysis of boron-filled scrap followed by an acid leach and dry sieving operation to return the powder to the required purity and particle size specifications. Typically, the recovery rate of the crystalline powder is in excess of 98.5 percent, and some of the remaining boron is recovered in the form of boric acid. The minimum purity requirement of the recovered product is 98.6 percent total boron

  2. Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Gandla, Srinivas; Gollu, Sankara Rao; Sharma, Ramakant; Sarangi, Venkateshwarlu; Gupta, Dipti, E-mail: diptig@iitb.ac.in [Plastic Electronics and Energy Laboratory (PEEL), Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2015-10-12

    In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 °C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8 mol. % of boron concentration demonstrated field-effect mobility value of 1.2 cm{sup 2} V{sup −1} s{sup −1} and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs.

  3. Anode performance of boron-doped graphites prepared from shot and sponge cokes

    Science.gov (United States)

    Liu, Tao; Luo, Ruiying; Yoon, Seong-Ho; Mochida, Isao

    The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g -1 and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by "molecular bridging" between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper.

  4. Evolution of anisotropy in bcc Fe distorted by interstitial boron

    Science.gov (United States)

    Gölden, Dominik; Zhang, Hongbin; Radulov, Iliya; Dirba, Imants; Komissinskiy, Philipp; Hildebrandt, Erwin; Alff, Lambert

    2018-01-01

    The evolution of magnetic anisotropy in bcc Fe as a function of interstitial boron atoms was investigated in thin films grown by molecular beam epitaxy. The thermodynamic nonequilibrium conditions during film growth allowed one to stabilize an interstitial boron content of about 14 at .% accompanied by lattice tetragonalization. The c /a ratio scaled linearly with the boron content up to a maximum value of 1.05 at 300 °C substrate growth temperature, with a room-temperature magnetization of. In contrast to nitrogen interstitials, the magnetic easy axis remained in-plane with an anisotropy of approximately -5.1 ×106erg /cm3 . Density functional theory calculations using the measured lattice parameters confirm this value and show that boron local ordering indeed favors in-plane magnetization. Given the increased temperature stability of boron interstitials as compared to nitrogen interstitials, this study will help to find possible ways to manipulate boron interstitials into a more favorable local order.

  5. Determination of boron in nuclear materials at subppm levels by high pressure liquid chromatography (HPLC)

    International Nuclear Information System (INIS)

    Rao, Radhika M.; Aggarwal, S.K.

    2002-11-01

    Experiments were conducted for the determination of boron in U 3 O 8 powder, aluminium metal and milliQ water using dynamically modified Reversed Phase High Pressure Liquid Chromatography (RP-HPLC) and using two precolumn chromogenic agents viz. chromotropic acid and curcumin for complexing boron. The complex was separated from the excess of reagent and determined by HPLC. When present in subppm levels, chromotropic acid was used successfully only for determination boron in water samples. For determination of boron at subppm levels in uranium and aluminium samples, curcumin was used as the precolumn chromogenic agent. The boron curcumin complex (rosocyanin) was formed after extraction of boron with 2-ethyl-l, 3-hexane diol (EHD). The rosocyanin complex was then separated from excess curcumin by displacement chromatography. Linear calibration curves for boron amounts in the range of 0.02 μg to 0.5 μg were developed with correlation coefficients varying from 0.997 to 0.999 and were used for the determination of boron in aluminium and uranium samples. Precision of about 10% was achieved in samples containing less than 1 ppmw of boron. Detection limit of this method is 0.01 μg boron. (author)

  6. Modeling of long-range migration of boron interstitials

    International Nuclear Information System (INIS)

    Velichko, O.I.; Burunova, O.N.

    2009-01-01

    A model of the interstitial migration of ion-implanted dopant in silicon during low-temperature thermal treatment has been formulated. It is supposed that the boron interstitials are created during ion implantation or at the initial stage of annealing. During thermal treatment a migration of these impurity interstitials to the surface and in the bulk of a semiconductor occurs. On this basis, a simulation of boron redistribution during thermal annealing for 35 minutes at a temperature of 800 0 C has been carried out. The calculated boron profile agrees well with the experimental data. A number of the parameters describing the interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 0.092 μm at a temperature of 800 0 C. To carry out modeling of ion-implanted boron redistribution, the analytical solutions of nonstationary diffusion equation for impurity interstitials have been obtained. The case of Dirichlet boundary conditions and the case of reflecting boundary on the surface of a semiconductor have been considered. (authors)

  7. Graphite and boron carbide composites made by hot-pressing

    International Nuclear Information System (INIS)

    Miyazaki, K.; Hagio, T.; Kobayashi, K.

    1981-01-01

    Composites consisting of graphite and boron carbide were made by hot-pressing mixed powders of coke carbon and boron carbide. The change of relative density, mechanical strength and electrical resistivity of the composites and the X-ray parameters of coke carbon were investigated with increase of boron carbide content and hot-pressing temperature. From these experiments, it was found that boron carbide powder has a remarkable effect on sintering and graphitization of coke carbon powder above the hot-pressing temperature of 2000 0 C. At 2200 0 C, electrical resistivity of the composite and d(002) spacing of coke carbon once showed minimum values at about 5 to 10 wt% boron carbide and then increased. The strength of the composite increased with increase of boron carbide content. It was considered that some boron from boron carbide began to diffuse substitutionally into the graphite structure above 2000 0 C and densification and graphitization were promoted with the diffusion of boron. Improvements could be made to the mechanical strength, density, oxidation resistance and manufacturing methods by comparing with the properties and processes of conventional graphites. (author)

  8. Internal stress control of boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M. [Osaka Univ., Suita (Japan). Graduate Sch. of Eng.

    1998-09-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s{sup -1} and substrate temperature of 300 C. (orig.) 12 refs.

  9. Internal stress control of boron thin film

    International Nuclear Information System (INIS)

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M.

    1998-01-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s -1 and substrate temperature of 300 C. (orig.)

  10. The hot working characteristics of a boron bearing and a conventional low carbon steel

    International Nuclear Information System (INIS)

    Stumpf, Waldo; Banks, Kevin

    2006-01-01

    Constitutive hot working constants were determined for an 11 ppm boron low carbon strip steel and compared from 875 to 1140 deg. C and strain rates of 0.001-2.5 s -1 to a high nitrogen low carbon strip steel. The boron steel showed a different hot working behaviour than the conventional steel with the steady state flow stress about 50-60% higher, the peak strain more than 50% higher and the eventual ferrite grain size about 40% smaller, if compared at the same temperature compensated strain rates or Z values. This difference persisted where the soaking temperature before compression was varied between 1140 and 1250 deg. C, proving that undissolved AlN in the boron-bearing steel was not responsible. With systematically varied linear cooling rates after hot working, the final ferrite grain size in the boron steel is finer and is independent of the two Z values applied during hot working. Retarded softening by dynamic recrystallisation during hot working in the boron containing steel is probably caused by boron solute drag of moving grain boundaries

  11. Structure and mechanical properties of Fe--Cr--Mo--C alloys with and without boron

    International Nuclear Information System (INIS)

    Chen, Y.L.

    1976-05-01

    Nonconventional heat treatments were designed to improve the mechanical properties of these martensitic steels. Results show that the as-quenched structures of both steels consist mainly of dislocated martensite. In the boron-free steel, there are more lath boundary retained austenite films. The boron-treated steel shows higher strengths at all tempering temperatures but with lower Charpy V-notch impact energies. Both steels show tempered martensite embrittlement when tempered at 350 0 C for 1 hour. The properties above 500 0 C tempering are significantly different in the two steels. While the boron-free steel shows a continuous increase in toughness when tempered above 500 0 C, the boron-treated steel suffers a second drop in toughness at 600 0 C tempering. Transmission electron microscopy studies show that in the 600 0 C tempered boron-treated steel large, more or less continuous cementite films precipitate at the lath boundaries, which are probably responsible for the embrittlement. The differences in mechanical properties at tempering temperatures above 500 0 C are rationalized in terms of the effect of boron-vacancy interactions on the recovery and recrystallization behavior of these steels. Boron seems to impair room temperature impact toughness at low strength levels but not at high strength levels. By simple nonconventional heat treatments of the present alloys, martensitic steels may be produced with quite good strength-toughness properties which are much superior to those of existing commercial ultra-high strength steels. It has also been shown that the as-quenched martensitic steels need not be brittle and in fact very good combinations of strength and toughness can be obtained with as-quenched martensitic steels. 56 fig., 5 tables, 75 references

  12. Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Soaram; Park, Hyunggil; Nam, Giwoong; Yoon, Hyunsik; Leem, Jaeyoung [Inje Univ., Gimhae (Korea, Republic of); Kim, Jong Su; Lee, Sangheon [Yeungnam Univ., Gyeongsan (Korea, Republic of); Kim, Jin Soo [Chonbuk National Univ., Jeonju (Korea, Republic of); Son, Jeongsik [Kyungwoon Univ., Gumi (Korea, Republic of)

    2013-11-15

    Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons (D{sup o}X), and the first LO phonon replicas of D{sup o}X, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ∼70 meV, while that of DAP was about ∼38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.

  13. Thermal desorption spectroscopy of boron/carbon films after keV deuterium irradiation

    International Nuclear Information System (INIS)

    Yamaki, T.; Gotoh, Y.; Ando, T.; Jimbou, R.; Ogiwara, N.; Saidoh, M.

    1994-01-01

    Thermal desorption spectroscopy (TDS) of D 2 and CD 4 was done on boron/carbon films (B/(B+C)=0-74%), after 3 keV D 3 + irradiation to 4.5x10 17 D/cm 2 at 473 K. The D 2 desorption peaks were observed at 1050, 850 and 650 K. For a sputter B/C film (0%), only the 1050 K peak was observed. With increasing boron concentration to 3%, a sharp peak appeared at 850 K, the intensity of which was found to increase with increasing boron concentration to 23%, and then to decrease at 74%. The 650 K shoulder, which was observed for high boron concentration specimens, was speculated to be deuterium trapped by boron atoms in the boron clusters. The relative amount of CD 4 desorption was found to decrease with increasing boron concentration, which was attributed to the decrease in the trapped deuterium concentration in the implantation layer at temperatures at which CD 4 desorption proceeds. ((orig.))

  14. ICRF boronization. A new technique towards high efficiency wall coating for superconducting tokamak reactors

    International Nuclear Information System (INIS)

    Li Jiangang; Zhao Yan Ping; Gu Xue Mao

    1999-01-01

    A new technique for wall conditioning that will be especially useful for future larger superconducting tokamaks, such as ITER, has been successfully developed and encouraging results have been obtained. Solid carborane powder, which is non-toxic and non-explosive, was used. Pulsed RF plasma was produced by a non-Faraday shielding RF antenna with RF power of 10 kW. The ion temperature was about 2 keV with a toroidal magnetic field of 1.8 T and a pressure of 3x10 -1 Pa. Energetic ions broke up the carborane molecules, and the resulting boron ions struck and were deposited on the first wall. In comparison with glow discharge cleaning boronization, the B/C coating film shows higher adhesion, more uniformity and longer lifetime during plasma discharges. The plasma performance was improved after ICRF boronization. (author). Letter-to-the-editor

  15. Effect of boron incorporation on the structure and electrical properties of diamond-like carbon films deposited by femtosecond and nanosecond pulsed laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Sikora, A. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Bourgeois, O. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Rouzaud, J.-N. [Laboratoire de Geologie, UMR 8538 CNRS, Ecole Normale Superieure, 45 Rue d' Ulm, 75230 Paris Cedex 05 (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Loir, A.-S. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Garden, J.-L. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Garrelie, F. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Donnet, C., E-mail: christophe.donnet@univ-st-etienne.f [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)

    2009-12-31

    The influence of the incorporation of boron in diamond-like carbon (DLC) films on the microstructure of the coatings has been investigated. The boron-containing DLC films (a-C:B) have been deposited by pulsed laser deposition (PLD) at room temperature in high vacuum conditions, by ablating graphite and boron targets either with a femtosecond pulsed laser (800 nm, 150 fs, fs-DLC) or with a nanosecond pulsed laser (248 nm, 20 ns, ns-DLC). Alternative ablation of the graphite and boron targets has been carried out to deposit the a-C:B films. The film structure and composition have been highlighted by coupling Field Emission Scanning Electron Microscopy, Electron Energy Loss Spectroscopy and High Resolution Transmission Electron Microscopy. Using the B K-edge, EELS characterization reveals the boron effect on the carbon bonding. Moreover, the plasmon energy reveals a tendency of graphitization associated to the boron doping. Pure boron particles have been characterized by HRTEM and reveal that those particles are amorphous or crystallized. The nanostructures of the boron-doped ns-DLC and the boron-doped fs-DLC are thus compared. In particular, the incorporation of boron in the DLC matrix is highlighted, depending on the laser used for deposition. Electrical measurements show that some of these films have potentialities to be used in low temperature thermometry, considering their conductivity and temperature coefficient of resistance (TCR) estimated within the temperature range 160-300 K.

  16. Microstructural stability and thermomechanical processing of boron modified beta titanium alloys

    Science.gov (United States)

    Cherukuri, Balakrishna

    alloys. Micro-voids were observed at the ends of the TiB needles at high temperature, slow strain rates as a result of decohesion at the TiB/matrix interfaces. At low temperatures and faster strain rates micro voids were also formed due to fracture of TiB needles. Finite element analysis on void formation in TiB containing alloys were in agreement with experimental observations. Microhardness and tensile testing of as-cast + forged and aged Beta21S and Ti5553 alloys with and without boron did not show any significant differences in mechanical properties. The primary benefits of boron modified alloys are in as-cast condition.

  17. Feasibility study of SMART core with soluble boron

    International Nuclear Information System (INIS)

    Kim, Kang Seog; Lee, Chung Chan; Zee, Sung Quun

    2000-11-01

    The excess reactivity of SMART core without soluble boron is effectively controlled by 49 CEDM. We suggest another method to control the core excess reactivity using both the checkerboard type of 25 CEDM and soluble boron and perform a feasibility calculation. The soluble boron operation is categorized into the on-line and the off-line mechanisms. The former is to successively control the boron concentration according to the excess reactivity during operation and the latter is to add and change some soluble boron during refueling and repairing. Since the on-line soluble boron control system of SMART is conceptually identical to that of the commercial pressurized water reactor, we did not perform the analysis. Since the soluble boron in the complete off-line system increases the moderator temperature coefficient, the reactivity defect between hot and cold moderator temperature is decreased. However, the decrease of the reactivity is not big to satisfy the core reactivity limits. When using 25 CEDM, the possible mechanism is to control the excess reactivity by both control rod and on-line boron control mechanism between cold and hot zero power and by only control rod at hot full power. We selected the loading pattern satisfying the requirement in the view of nuclear design

  18. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; hide

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  19. Combustion Performance of a Staged Hybrid Rocket with Boron addition

    Science.gov (United States)

    Lee, D.; Lee, C.

    2018-04-01

    In this paper, the effect of boron on overall system specific impulse was investigated. Additionally, a series of combustion tests was carried out to analyze and evaluate the effect of boron addition on O/F variation and radial temperature profiles. To maintain the hybrid rocket engine advantages, upper limit of boron contents in solid fuel was set to be 10 wt%. The results also suggested that, when adding boron to solid fuel, it helped to provide more uniform radial temperature distribution and also to increase specific impulse by 3.2%.

  20. The preparation and thermoelectric properties of molten salt electrodeposited boron wafers

    International Nuclear Information System (INIS)

    Kumashiro, Y.; Ozaki, S.; Sato, K.; Kataoka, Y.; Hirata, K.; Yokoyama, T.; Nagatani, S.; Kajiyama, K.

    2004-01-01

    We have prepared electrodeposited boron wafer by molten salts with KBF 4 -KF at 680 deg. C using graphite crucible for anode and silicon wafer and nickel plate for cathodes. Experiments were performed by various molar ratios KBF 4 /KF and current densities. Amorphous p-type boron wafers with purity 87% was deposited on nickel plate for 1 h. Thermal diffusivity by ring-flash method and heat capacity by DSC method produced thermal conductivity showing amorphous behavior in the entire temperature range. The systematical results on thermoelectric properties were obtained for the wafers prepared with KBF 4 -KF (66-34 mol%) under various current densities in the range 1-2 A/cm 2 . The temperature dependencies of electrical conductivity showed thermal activated type with activation energy of 0.5 eV. Thermoelectric power tended to increase with increasing temperature up to high temperatures with high values of (1-10) mV/K. Thermoelectric figure-of-merit was 10 -4 /K at high temperatures. Estimated efficiency of thermoelectric energy conversion would be calculated to be 4-5%

  1. Stable synthesis of few-layered boron nitride nanotubes by anodic arc discharge.

    Science.gov (United States)

    Yeh, Yao-Wen; Raitses, Yevgeny; Koel, Bruce E; Yao, Nan

    2017-06-08

    Boron nitride nanotubes (BNNTs) were successfully synthesized by a dc arc discharge using a boron-rich anode as synthesis feedstock in a nitrogen gas environment at near atmospheric pressure. The synthesis was achieved independent of the cathode material suggesting that under such conditions the arc operates in so-called anodic mode with the anode material being consumed by evaporation due to the arc heating. To sustain the arc current by thermionic electron emission, the cathode has to be at sufficiently high temperature, which for a typical arc current density of ~100 A/cm 2 , is above the boron melting point (2350 K). With both electrodes made from the same boron-rich alloy, we found that the arc operation unstable due to frequent sticking between two molten electrodes and formation of molten droplets. Stable and reliable arc operation and arc synthesis were achieved with the boron-rich anode and the cathode made from a refractory metal which has a melting temperature above the melting point of boron. Ex-situ characterization of synthesized BNNTs with electron microscopy and Raman spectroscopy revealed that independent of the cathode material, the tubes are primarily single and double walled. The results also show evidence of root-growth of BNNTs produced in the arc discharge.

  2. Synthesis and characterization of boron-oxygen-hydrogen thin films at low temperatures

    International Nuclear Information System (INIS)

    Music, D.; Koelpin, H.; Atiser, A.; Kreissig, U.; Bobek, T.; Hadam, B.; Schneider, J.M.

    2005-01-01

    We have studied the influence of synthesis temperature on chemical composition and mechanical properties of X-ray amorphous boron-oxygen-hydrogen (B-O-H) films. These B-O-H films have been synthesized by RF sputtering of a B-target in an Ar atmosphere. Upon increasing the synthesis temperature from room temperature to 550 deg. C, the O/B and H/B ratios decrease from 0.73 to 0.15 and 0.28 to 0.07, respectively, as determined by elastic recoil detection analysis. It is reasonable to assume that potential sources of O and H are residual gas and laboratory atmosphere. The elastic modulus, as measured by nanoindentation, increases from 93 to 214 GPa, as the O/B and H/B ratios decreases within the range probed. Hence, we have shown that the effect of impurity incorporation on the elastic properties is extensive and that the magnitude of the incorporation is a strong function of the substrate temperature

  3. Effect of Boron on the Strength and Toughness of Direct-Quenched Low-Carbon Niobium Bearing Ultra-High-Strength Martensitic Steel

    Science.gov (United States)

    Hannula, Jaakko; Kömi, Jukka; Porter, David A.; Somani, Mahesh C.; Kaijalainen, Antti; Suikkanen, Pasi; Yang, Jer-Ren; Tsai, Shao-Pu

    2017-11-01

    The effect of boron on the microstructures and mechanical properties of laboratory-control-rolled and direct-quenched 6-mm-thick steels containing 0.08 wt pct C and 0.02 wt pct Nb were studied. The boron contents were 24 ppm and a residual amount of 4 ppm. Two different finish rolling temperatures (FRTs) of 1093 K and 1193 K (820 °C and 920 °C) were used in the hot rolling trials to obtain different levels of pancaked austenite prior to DQ. Continuous cooling transformation (CCT) diagrams were constructed to reveal the effect of boron on the transformation behavior of these steels. Microstructural characterization was carried out using various microscopy techniques, such as light optical microscopy (LOM) and scanning electron microscopy-electron backscatter diffraction (SEM-EBSD). The resultant microstructures after hot rolling were mixtures of autotempered martensite and lower bainite (LB), having yield strengths in the range 918 to 1067 MPa with total elongations to fracture higher than 10 pct. The lower FRT of 1093 K (820 °C) produced better combinations of strength and toughness as a consequence of a higher degree of pancaking in the austenite. Removal of boron lowered the 34 J/cm2 Charpy-V impact toughness transition temperature from 206 K to 158 K (-67 °C to -115 °C) when the finishing rolling temperature of 1093 K (820 °C) was used without any loss in the strength values compared to the boron-bearing steel. This was due to the finer and more uniform grain structure in the boron-free steel. Contrary to expectations, the difference was not caused by the formation of borocarbide precipitates, as verified by transmission electron microscopy (TEM) investigations, but through the grain coarsening effect of boron.

  4. Hot flow behavior of boron microalloyed steels

    International Nuclear Information System (INIS)

    Lopez-Chipres, E.; Mejia, I.; Maldonado, C.; Bedolla-Jacuinde, A.; El-Wahabi, M.; Cabrera, J.M.

    2008-01-01

    This research work studies the effect of boron contents on the hot flow behavior of boron microalloyed steels. For this purpose, uniaxial hot-compression tests were carried out in a low carbon steel microalloyed with four different amounts of boron over a wide range of temperatures (950, 1000, 1050 and 1100 deg. C) and constant true strain rates (10 -3 , 10 -2 and 10 -1 s -1 ). Experimental results revealed that both peak stress and peak strain tend to decrease as boron content increases, which indicates that boron additions have a solid solution softening effect. Likewise, the flow curves show a delaying effect on the kinetics of dynamic recrystallization (DRX) when increasing boron content. Deformed microstructures show a finer austenitic grain size in the steel with higher boron content (grain refinement effect). Results are discussed in terms of boron segregation towards austenitic grain boundaries during plastic deformation, which increases the movement of dislocations, enhances the grain boundary cohesion and modificates the grain boundary structure

  5. Anode performance of boron-doped graphites prepared from shot and sponge cokes

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tao; Luo, Ruiying [School of Science, Beihang University, Beijing 100083 (China); Yoon, Seong-Ho; Mochida, Isao [Institute for Materials Chemistry and Engineering, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

    2010-03-15

    The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g{sup -1} and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by ''molecular bridging'' between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper. (author)

  6. The role of the substrate in the high energy boron implantation damage recovering

    International Nuclear Information System (INIS)

    Mica, I.; Di Piazza, L.; Laurin, L.; Mariani, M.; Mauri, A.G.; Polignano, M.L.; Ricci, E.; Sammiceli, F.; Spoldi, G.

    2009-01-01

    In this work the role of the Si substrate in the high energy boron implantation damage recovering is studied. The boron implants were carried out in Czochralski grown (1 0 0) polished Si substrates as well as in epitaxial Si layers grown on (1 0 0) Si by chemical vapor deposition. The boron implantation dose was 2 x 10 14 cm -2 and the implantation energy was 600 keV. The recovery annealing was a furnace annealing at 1000 deg. C for 40 min. The defects formed by high energy boron implantation have been observed with transmission electron microscopy (TEM). In order to increase the statistics some junctions were formed on the buried p-well and electrically characterized. For the epitaxial wafers it was found that the number and the size of the dislocations change according to the doping of the substrate. For the Czochralski wafers it was found that the morphology and the size of the dislocations change according to the presence of the wafer pre-annealing (whether conventional furnace annealing or Magic Denuded Zone process).

  7. On the Mechanism of Boron Ignition

    Science.gov (United States)

    Keil, D. G.; Dreizin, E. L.; Felder, W.; Vicenzi, E. P.

    1997-01-01

    Boron filaments were electrically heated in air and argon/oxygen mixtures while their resistance, temperature, and radiation at the wavelengths of BO and BO2 bands were monitored. The filaments 'burned' in two distinct stages. Samples of the filaments were quenched at different times before and during the burning and analyzed using electron microscopy. The beginning of the first stage combustion characterized by a local resistance minimum, a sharp spike in boron oxide radiation emission, and a rapid rise in temperature, occurred at 1500 +/- 70 deg. C, independent of pre-heating history and oxygen content (540%) in the gas environment. The data suggest that a phase transition occurs in the filaments at this temperature that triggers stage one combustion. Significant amounts of oxygen were found inside quenched filaments. Large spherical voids formed in the boron filaments during their second stage combustion which is interpreted to indicate a crucial role for the gas dissolution processes in the combustion scenario.

  8. Simple and Efficient Generation of Aryl Radicals from Aryl Triflates: Synthesis of Aryl Boronates and Aryl Iodides at Room Temperature.

    Science.gov (United States)

    Liu, Wenbo; Yang, Xiaobo; Gao, Yang; Li, Chao-Jun

    2017-06-28

    Despite the wide use of aryl radicals in organic synthesis, current methods to prepare them from aryl halides, carboxylic acids, boronic acids, and diazonium salts suffer from limitations. Aryl triflates, easily obtained from phenols, are promising aryl radical progenitors but remain elusive in this regard. Inspired by the single electron transfer process for aryl halides to access aryl radicals, we developed a simple and efficient protocol to convert aryl triflates to aryl radicals. Our success lies in exploiting sodium iodide as the soft electron donor assisted by light. This strategy enables the scalable synthesis of two types of important organic molecules, i.e., aryl boronates and aryl iodides, in good to high yields, with broad functional group compatibility in a transition-metal-free manner at room temperature. This protocol is anticipated to find potential applications in other aryl-radical-involved reactions by using aryl triflates as aryl radical precursors.

  9. A new model of tail diffusion of phosphorus and boron in silicon

    International Nuclear Information System (INIS)

    Morehead, F.F.; Lever, R.F.

    1986-01-01

    It is well known that high surface concentration phosphorus diffusion leads to deeply penetrating tails in its concentration profile. At 700 0 C the tail diffusivity exceeds that of low concentration phosphorus by a factor of a thousand. Less spectacular, but very significant tailing also affects boron, making the conventional models contained in commonly available process simulation programs quite inaccurate for boron diffusions with high surface concentrations. The authors show that the observed tailing can be accounted for by a model whose central assumption is the local equality of dopant and oppositely directed defect fluxes. As predicted by the model, the effect is greatest for normal processing at low temperatures for high surface concentrations. It is minimal for the high temperatures of rapid thermal annealing and unrelated to transient effects

  10. Performance Testing of a High Temperature Linear Alternator for Stirling Convertors

    Science.gov (United States)

    Metscher, Jonathan F.; Geng, Steven M.

    2016-01-01

    The NASA Glenn Research Center has conducted performance testing of a high temperature linear alternator (HTLA) in support of Stirling power convertor development for potential future Radioisotope Power Systems (RPS). The high temperature linear alternator is a modified version of that used in Sunpower's Advanced Stirling Convertor (ASC), and is capable of operation at temperatures up to 200 deg. Increasing the temperature capability of the linear alternator could expand the mission set of future Stirling RPS designs. High temperature Neodymium-Iron-Boron (Nd-Fe-B) magnets were selected for the HTLA application, and were fully characterized and tested prior to use. Higher temperature epoxy for alternator assembly was also selected and tested for thermal stability and strength. A characterization test was performed on the HTLA to measure its performance at various amplitudes, loads, and temperatures. HTLA endurance testing at 200 deg is currently underway.

  11. Thermodynamic approach to the conditions of chemical deposition of boron by contact with an inert substrate

    International Nuclear Information System (INIS)

    Thebault, J.; Naslain, R.; Hagenmuller, P.; Bernard, C.

    1978-01-01

    The optimum conditions for the synthesis of boron by chemical vapour deposition (CVD) from BCl 3 -H 2 or BBr 3 -H 2 mixtures onto an inert substrate (boron or boronized metals) have been studied by a thermodynamic approach. This approach, which postulates that states close to equilibrium are reached in the vicinity of the hot substrate, is based on the minimization of the total Gibbs free energy of the system. Between 1200 and 1900 K and under a total pressure of 1 atm, the hydrogen reduction of BCl 3 can lead to two types of by-products: BHCl 2 at all temperatures, and BCl 2 or BCl subhalides at high temperatures; BHCl 2 is the main product of the reduction at the lowest temperatures. The hydrogen reduction of BCl 3 is never complete for the conditions commonly used for the synthesis of boron. The amount of by-products and of BBr 3 which must be recycled can be minimized by utilizing BCl 3 -H 2 mixtures rich in hydrogen. The amount of boron deposited exhibits a maximum for a temperature close to 1700 K. Similar results have been obtained for BBr 3 . However, between 1000 and 1500 K and under a total pressure of 1 atm the amount of by-products (BHBr 2 and BBr 2 ) is smaller than in the case of BCl 3 . The boron yield from the reduction of BBr 3 is higher than that from BCl 3 and the percentage of boron halide which must be recycled is lower in the case of BBr 3 . Thus, BBr 3 appears to be a better source than BCl 3 for the CVD of boron. (Auth.)

  12. Pulverization of boron element and proportions of boron carbide in boron

    International Nuclear Information System (INIS)

    Lang, F.M.; Finck, C.

    1956-01-01

    It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 μ. Grain sizes smaller than 1μ are required for applying thin layers of such boron. (author) [fr

  13. Studies on the oxygen precipitation in highly boron doped silicon; Untersuchungen zur Sauerstoffausscheidung in hoch bordotiertem Silicium

    Energy Technology Data Exchange (ETDEWEB)

    Zschorsch, Markus

    2007-12-14

    The aim of this thesis was the getting of new knowledge on the elucidation of the oxygen precipitation in highly doped silicon. In the study of the early phases of the oxygen precipitation boron-oxygen complexes and their kinetics could be indirectly detected. These arise already during the cooling of the crystal and can be destroyed by subsequent temperature processes. The formation of the here as BO assumed species during the cooling after the silicon crystal fabrication could be numerically reproduced. Furthermore the study of early precipitation phases by means of neutron small angle scattering a maximum of the oxygen precipitation at {rho}=9 m{omega}cm. It could be shown that the decreasing of this at increasing boron concentration can be most probably reduced to boron precipitations. Furthermore it could be shown that after a tempering time of 24 hours at 700 C in silicon with {rho}=9 m{omega}cm platelet-shaped precipitates form. By the study of the precipitate growth could be shown that also in this phase the oxygen precipitation in silicon is strongest with a specific resistance of {rho}=9 m{omega}cm. By means of FTIR spectroscopy a new absorption band at a wave number of 1038 cm{sup -1} was found, which could be assigned to a boron species. By different experiments it is considered as probable that at this species it deals with BI respectively B{sub 2}I complexes.

  14. Structure and reactivity of boron-ate complexes derived from primary and secondary boronic esters.

    Science.gov (United States)

    Feeney, Kathryn; Berionni, Guillaume; Mayr, Herbert; Aggarwal, Varinder K

    2015-06-05

    Boron-ate complexes derived from primary and secondary boronic esters and aryllithiums have been isolated, and the kinetics of their reactions with carbenium ions studied. The second-order rate constants have been used to derive nucleophilicity parameters for the boron-ate complexes, revealing that nucleophilicity increased with (i) electron-donating aromatics on boron, (ii) neopentyl glycol over pinacol boronic esters, and (iii) 12-crown-4 ether.

  15. Continued biological investigations of boron-rich oligomeric phosphate diesters (OPDs). Tumor-selective boron agents for BNCT

    International Nuclear Information System (INIS)

    Lee, Mark W.; Shelly, Kenneth; Kane, Robert R.; Hawthorne, M. Frederick

    2006-01-01

    Clinical success of Boron Neutron Capture Therapy will rely on the selective intracellular delivery of high concentrations of boron-10 to tumor tissue. In order for a boron agent to facilitate clinical success, the simultaneous needs of obtaining a high tumor dose, high tumor selectivity, and low systemic toxicity must be realized. Boron-rich oligomeric phosphate diesters (OPDs) are a class of highly water-soluble compounds containing up to 40% boron by weight. Previous work in our groups demonstrated that once placed in the cytoplasm of tumor cells, OPDs quickly accumulate within the cell nucleus. The objective of the current study was to determine the biodistribution of seven different free OPDs in BALB/c mice bearing EMT6 tumors. Fructose solutions containing between 1.4 and 6.4 micrograms of boron per gram of tissue were interveinously injected in mice seven to ten days after tumor implantation. At intervals during the study, animals were euthanized and samples of tumor, blood, liver, kidney, brain and skin were collected and analyzed for boron content using ICP-AES. Tumor boron concentrations of between 5 and 29 ppm were achieved and maintained over the 72-hour time course of each experiment. Several OPDs demonstrated high tumor selectivity with one oligomer exhibiting a tumor to blood ratio of 35:1. The apparent toxicity of each oligomer was assessed through animal behavior during the experiment and necropsy of each animal upon sacrifice. (author)

  16. Conditionings for boron-carbon plasma facing wall

    International Nuclear Information System (INIS)

    Hino, Tomoaki; Yamauchi, Yuji; Yamashina, Toshiro

    1994-01-01

    For plasma facing material with components of boron and carbon, the method of conditionings due to He discharge cleaning and baking is considered. The conditioning time required to suppress the hydrogen recycling is discussed. It is shown that the hydrogen trapped by the boron can be relatively easily removed only by the baking at 300degC or only by He discharge cleaning with current density of 0.1 mA/cm 2 . It is not easy to remove the hydrogen trapped by the carbon by the baking since the temperature required becomes 500degC. The current density required also becomes high, 1 mA/cm 2 , for the reduction of the hydrogen trapped by the carbon. (author)

  17. Effect of mechanical activation on jell boronizing treatment of the AISI 4140

    Science.gov (United States)

    Yılmaz, S. O.; Karataş, S.

    2013-06-01

    The article presents the effect of mechanical activation on the growth kinetics of boride layer of boronized AISI 4140 steel. The samples were boronized by ferroboron + (SiO2-Na2O) powders for 873-1173 K temperature and 2, 4, 6 and 8 h times, respectively. The morphology and types of borides formed on the surface of AISI 4140 steel substrate were analyzed. Layer growth kinetics were analyzed by measuring the extent of penetration of FeB and Fe2B sublayers as function of treatment time and temperature in the range of 873-1173 K. High diffusivity was obtained by creating a large number of defects through mechanical activation in the form of nanometer sized crystalline particles through the repeated fracturing and cold-welding of the powder particles, and a depth of 100 μm was found in the specimen borided by the 2 h MA powders, for 4 h and 1073 K, where 2000-2350 HV were measured. Consequently, the application conditions of boronizing were improved by usage of mechanical activation. The preferred Fe2B boride without FeB could be formed in the boride layer under 973 K boronizing temperature by mechanically activated by ferroboron + sodium silicate powder mixture due to the decrease of the activation energy.

  18. Molecular basis of adaptation to high soil boron in wheat landraces and elite cultivars.

    Science.gov (United States)

    Pallotta, Margaret; Schnurbusch, Thorsten; Hayes, Julie; Hay, Alison; Baumann, Ute; Paull, Jeff; Langridge, Peter; Sutton, Tim

    2014-10-02

    Environmental constraints severely restrict crop yields in most production environments, and expanding the use of variation will underpin future progress in breeding. In semi-arid environments boron toxicity constrains productivity, and genetic improvement is the only effective strategy for addressing the problem. Wheat breeders have sought and used available genetic diversity from landraces to maintain yield in these environments; however, the identity of the genes at the major tolerance loci was unknown. Here we describe the identification of near-identical, root-specific boron transporter genes underlying the two major-effect quantitative trait loci for boron tolerance in wheat, Bo1 and Bo4 (ref. 2). We show that tolerance to a high concentration of boron is associated with multiple genomic changes including tetraploid introgression, dispersed gene duplication, and variation in gene structure and transcript level. An allelic series was identified from a panel of bread and durum wheat cultivars and landraces originating from diverse agronomic zones. Our results demonstrate that, during selection, breeders have matched functionally different boron tolerance alleles to specific environments. The characterization of boron tolerance in wheat illustrates the power of the new wheat genomic resources to define key adaptive processes that have underpinned crop improvement.

  19. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    International Nuclear Information System (INIS)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S.

    2015-01-01

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g −1 at 100 mA g −1 after 30th cycles. At high current density value of 1 A g −1 , B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states

  20. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  1. Enhanced oxidation resistance of carbon fiber reinforced lithium aluminosilicate composites by boron doping

    International Nuclear Information System (INIS)

    Xia, Long; Jin, Feng; Zhang, Tao; Hu, Xueting; Wu, Songsong; Wen, Guangwu

    2015-01-01

    Highlights: • C f /LAS composites exhibit enhanced oxidation resistance by boron doping. • Boron doping is beneficial to the improvement of graphitization degree of carbon fibers. • Graphitization of carbon fibers together with the decrease of viscosity of LAS matrix is responsible to the enhancement of oxidation resistance of C f /LAS composites. - Abstract: Carbon fiber reinforced lithium aluminosilicate matrix composites (C f /LAS) modified with boron doping were fabricated and oxidized for 1 h in static air. Weight loss, residual strength and microstructure were analyzed. The results indicate that boron doping has a remarkable effect on improving the oxidation resistance for C f /LAS. The synergism of low viscosity of LAS matrix at high temperature and formation of graphite crystals on the surface of carbon fibers, is responsible for excellent oxidation resistance of the boron doped C f /LAS.

  2. Influence of boronization on operation with high-Z plasma facing components in Alcator C-Mod

    International Nuclear Information System (INIS)

    Lipschultz, B.; Lin, Y.; Marmar, E.S.; Whyte, D.G.; Wukitch, S.; Hutchinson, I.H.; Irby, J.; LaBombard, B.; Reinke, M.L.; Terry, J.L.; Wright, G.

    2007-01-01

    We report the results of operation of Alcator C-Mod with all high-Z molybdenum plasma facing component (PFC) surfaces. Without boron-coated PFCs energy confinement was poor (H ITER,89 ∼ 1) due to high core molybdenum (n Mo /n e ≤ 0.1%) and radiation. After applying boron coatings, n Mo /n e was reduced by a factor of 10-20 with H ITER,89 approaching 2. Results of between-discharge boronization, localized at various major radii, point towards important molybdenum source regions being small, outside the divertor, and due to RF-sheath-rectification. Boronization also has a significant effect on the plasma startup phase lowering Z eff , radiation, and lowering the runaway electron damage. The requirement of low-Z coatings over at least a fraction of the Mo PFCs in C-Mod for best performance together with the larger than expected D retention in Mo, give impetus for further high-Z PFC investigations to better predict the performance of un-coated tungsten surfaces in ITER and beyond

  3. Peculiar Features of Thermal Aging and Degradation of Rapidly Quenched Stainless Steels under High-Temperature Exposures

    Science.gov (United States)

    Shulga, A. V.

    2017-12-01

    This article presents the results of comparative studies of mechanical properties and microstructure of nuclear fuel tubes and semifinished stainless steel items fabricated by consolidation of rapidly quenched powders and by conventional technology after high-temperature exposures at 600 and 700°C. Tensile tests of nuclear fuel tube ring specimens of stainless austenitic steel of grade AISI 316 and ferritic-martensitic steel are performed at room temperature. The microstructure and distribution of carbon and boron are analyzed by metallography and autoradiography in nuclear fuel tubes and semifinished items. Rapidly quenched powders of the considered steels are obtained by the plasma rotating electrode process. Positive influence of consolidation of rapidly quenched powders on mechanical properties after high-temperature aging is confirmed. The correlation between homogeneous distribution of carbon and boron and mechanical properties of the considered steel is determined. The effects of thermal aging and degradation of the considered steels are determined at 600°C and 700°C, respectively.

  4. A design method to isothermalize the core of high-temperature gas-cooled reactors

    International Nuclear Information System (INIS)

    Takano, M.; Sawa, K.

    1987-01-01

    A practical design method is developed to isothermalize the core of block-type high-temperature gas-cooled reactors (HTGRs). Isothermalization plays an important role in increasing the design margin on fuel temperature. In this method, the fuel enrichment and the size and boron content of the burnable poison rod are determined over the core blockwise so that the axially exponential and radially flat power distribution are kept from the beginning to the end of core life. The method enables conventional HTGRs to raise the outlet gas temperature without increasing the maximum fuel temperature

  5. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    International Nuclear Information System (INIS)

    Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

    2008-01-01

    This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

  6. Creep resistant high temperature martensitic steel

    Energy Technology Data Exchange (ETDEWEB)

    Hawk, Jeffrey A.; Jablonski, Paul D.; Cowen, Christopher J.

    2017-01-31

    The disclosure provides a creep resistant alloy having an overall composition comprised of iron, chromium, molybdenum, carbon, manganese, silicon, nickel, vanadium, niobium, nitrogen, tungsten, cobalt, tantalum, boron, copper, and potentially additional elements. In an embodiment, the creep resistant alloy has a molybdenum equivalent Mo(eq) from 1.475 to 1.700 wt. % and a quantity (C+N) from 0.145 to 0.205. The overall composition ameliorates sources of microstructural instability such as coarsening of M.sub.23C.sub.6carbides and MX precipitates, and mitigates or eliminates Laves and Z-phase formation. A creep resistant martensitic steel may be fabricated by preparing a melt comprised of the overall composition followed by at least austenizing and tempering. The creep resistant alloy exhibits improved high-temperature creep strength in the temperature environment of around 650.degree. C.

  7. Creep resistant high temperature martensitic steel

    Science.gov (United States)

    Hawk, Jeffrey A.; Jablonski, Paul D.; Cowen, Christopher J.

    2015-11-13

    The disclosure provides a creep resistant alloy having an overall composition comprised of iron, chromium, molybdenum, carbon, manganese, silicon, nickel, vanadium, niobium, nitrogen, tungsten, cobalt, tantalum, boron, and potentially additional elements. In an embodiment, the creep resistant alloy has a molybdenum equivalent Mo(eq) from 1.475 to 1.700 wt. % and a quantity (C+N) from 0.145 to 0.205. The overall composition ameliorates sources of microstructural instability such as coarsening of M.sub.23C.sub.6 carbides and MX precipitates, and mitigates or eliminates Laves and Z-phase formation. A creep resistant martensitic steel may be fabricated by preparing a melt comprised of the overall composition followed by at least austenizing and tempering. The creep resistant alloy exhibits improved high-temperature creep strength in the temperature environment of around 650.degree. C.

  8. Single-Crystal Tungsten Carbide in High-Temperature In-Situ Additive Manufacturing Characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kolopus, James A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Boatner, Lynn A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-05-18

    Nanoindenters are commonly used for measuring the mechanical properties of a wide variety of materials with both industrial and scientific applications. Typically, these instruments employ an indenter made of a material of suitable hardness bonded to an appropriate shaft or holder to create an indentation on the material being tested. While a variety of materials may be employed for the indenter, diamond and boron carbide are by far the most common materials used due to their hardness and other desirable properties. However, as the increasing complexity of new materials demands a broader range of testing capabilities, conventional indenter materials exhibit significant performance limitations. Among these are the inability of diamond indenters to perform in-situ measurements at temperatures above 600oC in air due to oxidation of the diamond material and subsequent degradation of the indenters mechanical properties. Similarly, boron carbide also fails at high temperature due to fracture. [1] Transition metal carbides possess a combination of hardness and mechanical properties at high temperatures that offer an attractive alternative to conventional indenter materials. Here we describe the technical aspects for the growth of single-crystal tungsten carbide (WC) for use as a high-temperature indenter material, and we examine a possible approach to brazing these crystals to a suitable mount for grinding and attachment to the indenter instrument. The use of a by-product of the recovery process is also suggested as possibly having commercial value.

  9. FeNbB bulk metallic glass with high boron content

    Energy Technology Data Exchange (ETDEWEB)

    Stoica, M.; Das, Jayanta; Eckert, Juergen [IFW Dresden, Institute for Complex Materials, P.O. Box 270016, D-01171 Dresden (Germany); Hajlaoui, Khalil; Yavari, Alain Reza [LTPCM-CNRS, I.N.P. Grenoble, 1130 Rue de la Piscine, BP 75, F-38402 University Campus (France)

    2007-07-01

    Fe-based alloys able to form magnetic bulk metallic glasses (BMGs) are of the type transition metal - metalloid and often contain 5 or more elements. Usually, the metalloid content is around 20 atomic %. Very recently, the Fe{sub 66}Nb{sub 4}B{sub 30} alloy was found to be able to form BMG by copper mold casting technique, despite its high metalloid content. Several composition with boron contents around 30 at. % or even higher were calculated since 1993 as possible compositions of the remaining amorphous matrix after the first stage of nanocrystallization of Finemet-type Fe{sub 77}Si{sub 14}B{sub 9} glassy ribbons with 0.5 to 1 atomic % Cu and a few percent Nb addition. Melt-spun ribbons of all calculated compositions were found to be glassy. The composition of the ternary Fe-based BMG investigated in the present study resulted as an optimization of all possibilities. The alloy is ferromagnetic with glass transition temperature T{sub g}=845 K, crystallisation temperature T{sub x}=876 K, liquidus temperature T{sub liq}=1451 K and mechanical strength of 4 GPa. The coercivity of as-cast samples is very low, around 1.5 A/m. The present contribution aims at discussing the thermal stability, mechanical and magnetic properties of the Fe{sub 66}Nb{sub 4}B{sub 30} BMG.

  10. Effect of sintering temperature and boron carbide content on the wear behavior of hot pressed diamond cutting segments

    Directory of Open Access Journals (Sweden)

    Islak S.

    2015-01-01

    Full Text Available The aim of this study was to investigate the effect of sintering temperature and boron carbide content on wear behavior of diamond cutting segments. For this purpose, the segments contained 2, 5 and 10 wt.% B4C were prepared by hot pressing process carried out under a pressure of 35 MPa, at 600, 650 and 700 °C for 3 minutes. The transverse rupture strength (TRS of the segments was assessed using a three-point bending test. Ankara andesite stone was cut to examine the wear behavior of segments with boron carbide. Microstructure, surfaces of wear and fracture of segments were determined by scanning electron microscopy (SEM-EDS, and X-ray diffraction (XRD analysis. As a result, the wear rate decreased significantly in the 0-5 wt.% B4C contents, while it increased in the 5-10 wt.% B4C contents. With increase in sintering temperature, the wear rate decreased due to the hard matrix.

  11. Preparation of fiber reinforced titanium diboride and boron carbide composite bodies

    International Nuclear Information System (INIS)

    Newkirk, L.R.; Riley, R.E.; Sheinberg, H.; Valencia, F.A.; Wallace, T.C.

    1979-01-01

    A process is described for uniformly infiltrating woven carbon cloth with either titanium diboride or boron carbide at reduced pressure (15 to 25 torr). The effects of deposition temperature on the uniformity of penetration and on coating rate are described for temperatures from 750 to 1000 0 C and deposit loadings from 20 to 43 vol. %. For the boron carbides, boron composition is discussed and evidence is presented suggesting that propene is the dominant rate controlling reactant

  12. Implantation of boron in silicon

    International Nuclear Information System (INIS)

    Hofker, W.K.

    1975-01-01

    The distribution versus depth of boron implanted in silicon and the corresponding electrical activity obtained after annealing are studied. The boron distributions are measured by secondary-ion mass spectrometry. Boron distributions implanted at energies in the range from 30 keV to 800 keV in amorphous and polycrystalline silicon are analysed. Moments of these distributions are determined by a curve-fitting programme and compared with moments calculated by Winterbon. Boron distributions obtained by implantations along a dense crystallographic direction in monocrystalline silicon are found to have penetrating tails. After investigation of some possible mechanisms of tail formation it is concluded that the tails are due to channelling. It was found that the behaviour of boron during annealing is determined by the properties of three boron fractions consisting of precipitated boron, interstitial boron and substitutional boron. The electrical activity of the boron versus depth is found to be consistent with the three boron fractions. A peculiar redistribution of boron is found which is induced by the implantation of a high dose of heavy ions and subsequent annealing. Different mechanisms which may cause the observed effects, such as thermal diffusion which is influenced by lattice strain and damage, are discussed. (Auth.)

  13. Formation of polycrystalline MgB2 synthesized by powder in sealed tube method with different initial boron phase

    Science.gov (United States)

    Yudanto, Sigit Dwi; Imaduddin, Agung; Kurniawan, Budhy; Manaf, Azwar

    2018-04-01

    Magnesium diboride, MgB2 is a new high critical temperature superconductor that discovered in the beginning of the 21st century. The MgB2 has a simple crystal structure and a high critical temperature, which can be manufactured in several forms like thin films, tapes, wires including bulk in the large scale. For that reason, the MgB2 has good prospects for various applications in the field of electronic devices. In the current work, we have explored the synthesis of MgB2 polycrystalline using powder in a sealed tube method. Different initial boron phase for the synthesized of MgB2 polycrystalline were used. These were, in addition to magnesium powders, crystalline boron, amorphous boron and combination both of them were respectively fitted in the synthesis. The raw materials were mixed in a stoichiometric ratio of Mg: B=1:2, ground using agate mortar, packed into stainless steel SS304. The pack was then sintered at temperature of 800°C for 2 hours in air atmosphere. Phase formation of MgB2 polycrystalline in difference of initial boron phase was characterized using XRD and SEM. Referring to the diffraction pattern and microstructure observation, MgB2 polycrystalline was formed, and the formation was effective when using the crystalline Mg and fully amorphous B as the raw materials. The critical temperature of the specimen was evaluated by the cryogenic magnet. The transition temperature of the MgB2 specimen synthesized using crystalline magnesium and full amorphous boron is 42.678 K (ΔTc = 0.877 K).

  14. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  15. Boron incorporation into rutile: phase equilibria and structural considerations

    Energy Technology Data Exchange (ETDEWEB)

    Grey, I.E.; Li, C.; MacRae, C.M. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), East Melbourne, VIC (Australia). Div of Minerals; Bursill, L.A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-06-01

    Reduction of rutile in the presence of borate flux stabilised the rutile phase relative to reduced rutiles due to incorporation of boron from the flux. In the presence of borates the rutile phase is stabilised to oxygen fugacities that are lower by almost two orders of magnitude compared with fugacities at the limit of the single-phase rutile phase field in the pure Ti-O system. Boron incorporation is accompanied by reduction of titanium to the trivalent state, according to the charge compensation relation: 3Ti{sup 4+}{identical_to} 3 Ti{sup 3+} + B{sup 3+}. Results of powder X-ray diffraction and transmission electron microscopy studies on samples prepared in the temperature range 1100 to 1300 deg C have been used to establish a model for boron incorporation. It is proposed that at the temperatures studied, local defects in boron doped rutile result from displacement of titanium atoms to adjacent interstitial sites coupled with occupation by boron of the triangular face of the vacated octahedral sites. This atomic grouping represents a small element of the TiBO{sub 3} (calcite-type) structure. Annealing at a lower temperature results in ordering of the local defects to form (101){sub r} planar intergrowths of rutile and calcite-type structures. 14 refs., 3 tabs., 8 figs.

  16. Boron incorporation into rutile: phase equilibria and structural considerations

    International Nuclear Information System (INIS)

    Grey, I.E.; Li, C.; MacRae, C.M.; Bursill, L.A.

    1997-01-01

    Reduction of rutile in the presence of borate flux stabilised the rutile phase relative to reduced rutiles due to incorporation of boron from the flux. In the presence of borates the rutile phase is stabilised to oxygen fugacities that are lower by almost two orders of magnitude compared with fugacities at the limit of the single-phase rutile phase field in the pure Ti-O system. Boron incorporation is accompanied by reduction of titanium to the trivalent state, according to the charge compensation relation: 3Ti 4+ ≡ 3 Ti 3+ + B 3+ . Results of powder X-ray diffraction and transmission electron microscopy studies on samples prepared in the temperature range 1100 to 1300 deg C have been used to establish a model for boron incorporation. It is proposed that at the temperatures studied, local defects in boron doped rutile result from displacement of titanium atoms to adjacent interstitial sites coupled with occupation by boron of the triangular face of the vacated octahedral sites. This atomic grouping represents a small element of the TiBO 3 (calcite-type) structure. Annealing at a lower temperature results in ordering of the local defects to form (101) r planar intergrowths of rutile and calcite-type structures. 14 refs., 3 tabs., 8 figs

  17. Study through potentiodynamic techniques of the corrosion resistance of different aluminium base MMC's with boron additions

    International Nuclear Information System (INIS)

    Abenojar, J.; Bautista, A.; Guzman, S.; Velasco, F.; Martinez, M.A.

    2009-01-01

    This paper compares a wrought aluminium with a PM aluminium and PM aluminium alloys with boron-base additions, containing boron carbide and Fe/B (obtained by mechanical alloying during 36 hours from a Fe-B 50% mixture by weight). The effect of sintering temperature for the Fe/B containing material and the effect of mechanical alloying for the boron carbide containing aluminium alloy on the corrosion resistance of those materials have been studied. Their behaviour is followed through cyclic anodic polarization curves in chloride media. In the Al+20%Fe/B composite, low sintering temperatures (650- 950 deg C) exert a negative effect. However, when the material was sintered at high temperature (1000-1100 deg C) its behaviour was very similar to the PM pure aluminium. The effect of mechanical alloying studied in aluminium with boron carbide was also important in corrosion resistance, finding a lower corrosion rate in the mechanically alloyed material. (author)

  18. Elastic modulus and fracture of boron carbide

    International Nuclear Information System (INIS)

    Hollenberg, G.W.; Walther, G.

    1978-12-01

    The elastic modulus of hot-pressed boron carbide with 1 to 15% porosity was measured at room temperature. K/sub IC/ values were determined for the same porosity range at 500 0 C by the double torsion technique. The critical stress intensity factor of boron carbide with 8% porosity was evaluated from 25 to 1200 0 C

  19. Effect of mechanical activation on jell boronizing treatment of the AISI 4140

    International Nuclear Information System (INIS)

    Yılmaz, S.O.; Karataş, S.

    2013-01-01

    The article presents the effect of mechanical activation on the growth kinetics of boride layer of boronized AISI 4140 steel. The samples were boronized by ferroboron + (SiO 2 –Na 2 O) powders for 873–1173 K temperature and 2, 4, 6 and 8 h times, respectively. The morphology and types of borides formed on the surface of AISI 4140 steel substrate were analyzed. Layer growth kinetics were analyzed by measuring the extent of penetration of FeB and Fe 2 B sublayers as function of treatment time and temperature in the range of 873–1173 K. High diffusivity was obtained by creating a large number of defects through mechanical activation in the form of nanometer sized crystalline particles through the repeated fracturing and cold-welding of the powder particles, and a depth of 100 μm was found in the specimen borided by the 2 h MA powders, for 4 h and 1073 K, where 2000–2350 HV were measured. Consequently, the application conditions of boronizing were improved by usage of mechanical activation. The preferred Fe 2 B boride without FeB could be formed in the boride layer under 973 K boronizing temperature by mechanically activated by ferroboron + sodium silicate powder mixture due to the decrease of the activation energy.

  20. Effect of mechanical activation on jell boronizing treatment of the AISI 4140

    Energy Technology Data Exchange (ETDEWEB)

    Yılmaz, S.O., E-mail: osyilmaz@firat.edu.tr [F.U. Engineering Faculty, Metallurgical and Material Science, 23119 Elazığ (Turkey); Karataş, S. [F.U. Engineering Faculty, Metallurgical and Material Science, 23119 Elazığ (Turkey)

    2013-06-15

    The article presents the effect of mechanical activation on the growth kinetics of boride layer of boronized AISI 4140 steel. The samples were boronized by ferroboron + (SiO{sub 2}–Na{sub 2}O) powders for 873–1173 K temperature and 2, 4, 6 and 8 h times, respectively. The morphology and types of borides formed on the surface of AISI 4140 steel substrate were analyzed. Layer growth kinetics were analyzed by measuring the extent of penetration of FeB and Fe{sub 2}B sublayers as function of treatment time and temperature in the range of 873–1173 K. High diffusivity was obtained by creating a large number of defects through mechanical activation in the form of nanometer sized crystalline particles through the repeated fracturing and cold-welding of the powder particles, and a depth of 100 μm was found in the specimen borided by the 2 h MA powders, for 4 h and 1073 K, where 2000–2350 HV were measured. Consequently, the application conditions of boronizing were improved by usage of mechanical activation. The preferred Fe{sub 2}B boride without FeB could be formed in the boride layer under 973 K boronizing temperature by mechanically activated by ferroboron + sodium silicate powder mixture due to the decrease of the activation energy.

  1. SHB1/HY1 Alleviates Excess Boron Stress by Increasing BOR4 Expression Level and Maintaining Boron Homeostasis in Arabidopsis Roots

    Directory of Open Access Journals (Sweden)

    Qiang Lv

    2017-05-01

    Full Text Available Boron is an essential mineral nutrient for higher plant growth and development. However, excessive amounts of boron can be toxic. Here, we report on the characterization of an Arabidopsis mutant, shb1 (sensitive to high-level of boron 1, which exhibits hypersensitivity to excessive boron in roots. Positional cloning demonstrated that the shb1 mutant bears a point mutation in a gene encoding a heme oxygenase 1 (HO1 corresponding to the HY1 gene involved in photomorphogenesis. The transcription level of the SHB1/HY1 gene in roots is up-regulated under excessive boron stimulation. Either overexpressing SHB1/HY1 or applying the HO1 inducer hematin reduces boron accumulation in roots and confers high boron tolerance. Furthermore, carbon monoxide and bilirubin, catalytic products of HO1, partially rescue the boron toxicity-induced inhibition of primary root growth in shb1. Additionally, the mRNA level of BOR4, a boron efflux transporter, is reduced in shb1 roots with high levels of boron supplementation, and hematin cannot relieve the boron toxicity-induced root inhibition in bor4 mutants. Taken together, our study reveals that HO1 acts via its catalytic by-products to promote tolerance of excessive boron by up-regulating the transcription of the BOR4 gene and therefore promoting the exclusion of excessive boron in root cells.

  2. Electronic and vibrational hopping transport in boron carbides

    International Nuclear Information System (INIS)

    Emin, D.

    1991-01-01

    General concepts of hopping-type transport and localization are reviewed. Disorder, electronic correlations and atomic displacements, effects ignored in electronic band structure calculations, foster localization of electronic charge carriers. Examples are given that illustrate the efficacy of these effects in producing localization. This introduction is followed by a brief discussion of the relation between hopping-type transport and localization. The fundamentals of the formation, localization, and hopping transport of small polarons and/or bipolarons is then described. Electronic transport in boron carbides is presented as an example of the adiabatic hopping of small bipolarons. Finally, the notion of vibrational hopping is introduced. The high-temperature thermal diffusion in boron carbides is presented as a potential application of this idea

  3. The intergranular segregation of boron in substoichiometric Ni/sub 3/Al

    Energy Technology Data Exchange (ETDEWEB)

    Choudhury, A.

    1987-12-01

    The intermetallic compound Ni/sub 3/Al offers promise as a material for high temperature applications. In addition to its unusual property of increasing strength with temperature (until approx.700/sup 0/C), it has excellent corrosion and oxidation resistance. Microalloying the alloy with boron has been shown to be dramatically effective in improving its inherent intergranular brittleness. This improvement results from the strong tendency of boron to segregate to the grain boundaries of Ni/sub 3/Al. This research deals with the study of the segregation behavior of boron. Auger electron spectroscopy was chosen as the technique adopted to study this segregation. The strong effect of segregant level on the grain boundary strength level can be controlled by thermal history variations and by variations in the level of solute in the bulk. Cathodic hydrogen charging was shown to be a potent tool in opening up other wise cohesive boundaries for analysis. The effective binding energy of boron at the grain boundaries of Ni/sub 3/Al was calculated from experimental data; it was found to vary between 0.2 and 0.45 eV. Kinetics of segregation have been investigated; the present set of kinetic studies were shown to be inadequate to find a diffusion coefficient and that temperatures lower than those studied here need to be used. As an associated investigation, a set of elemental standards were developed for the particular scanning Auger microprobe used in this study. 141 refs., 94 figs., 26 tabs.

  4. Corrosion resistance testing of high-boron-content stainless steels

    International Nuclear Information System (INIS)

    Petrman, I.; Safek, V.

    1994-01-01

    Boron steels, i.e. stainless steels with boron contents of 0.2 to 2.25 wt.%, are employed in nuclear engineering for the manufacture of baskets or wells in which radioactive fissile materials are stored, mostly spent nuclear fuel elements. The resistance of such steels to intergranular corrosion and uniform corrosion was examined in the Strauss solution and in boric acid; the dependence of the corrosion rate of the steels on their chemical composition was investigated, and their resistance was compared with that of AISI 304 type steel. Corrosion resistance tests in actual conditions of ''wet'' compact storage (demineralized water or a weak boric acid solution) gave evidence that boron steels undergo nearly no uniform corrosion and, as electrochemical measurements indicated, match standard corrosion-resistant steels. Corrosion resistance was confirmed to decrease slightly with increasing boron content and to increase somewhat with increasing molybdenum content. (Z.S.). 3 tabs., 4 figs., 7 refs

  5. Mg-doping experiment and electrical transport measurement of boron nanobelts

    International Nuclear Information System (INIS)

    Kirihara, K.; Hyodo, H.; Fujihisa, H.; Wang, Z.; Kawaguchi, K.; Shimizu, Y.; Sasaki, T.; Koshizaki, N.; Soga, K.; Kimura, K.

    2006-01-01

    We measured electrical conductance of single crystalline boron nanobelts having α-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. The pure boron nanobelt is a p-type semiconductor and its electrical conductivity was estimated to be on the order of 10 -3 (Ω cm) -1 at room temperature. The carrier mobility of pure boron nanobelt was measured to be on the order of 10 -3 (cm 2 Vs -1 ) at room temperature and has an activation energy of ∼0.19 eV. The Mg-doped boron nanobelts have the same α-tetragonal crystalline structure as the pristine nanobelts. After Mg vapor diffusion, the nanobelts were still semiconductor, while the electrical conductance increased by a factor of 100-500. Transition to metal or superconductor by doping was not observed. - Graphical abstract: SEM micrographs of boron nanobelt after Ni/Au electrode fabrication by electron beam lithography. Display Omitted

  6. Role of intericosahedral chains on the hardness of sputtered boron carbide films

    International Nuclear Information System (INIS)

    Jacobsohn, L.G.; Averitt, R.D.; Wetteland, C.J.; Schulze, R.K.; Nastasi, M.; Daemen, L.L.; Jenei, Z.; Asoka-Kumar, P.

    2004-01-01

    The relationship between the structure and mechanical properties of sputter-deposited boron carbide films was investigated. Changes in the structure induced by annealing were characterized in terms of chemical composition, chemical bonding, and concentrations of defects and trapped impurities. The creation of intericosahedral chains for higher annealing temperatures was revealed by infrared and Raman measurements, and the intensity of the infrared band at 1500 cm-1 was found to be related to the hardness. The presence of residual trapped Ar atoms and of open-volume defects is insensitive to relatively high annealing temperatures and does not influence the recovery of the hardness. Our results suggest postdeposition annealing as a pathway to enhance the mechanical properties of boron carbide films

  7. Neutronic-thermohydraulic oscillatory instability in modern PWRs due to high concentrations of boron in the water

    International Nuclear Information System (INIS)

    Novelli, A.

    1985-01-01

    Conspicuous amounts of boric acid are normally dissolved into the moderator of a modern PWR, especially in BOL operative conditions. If the concentration of such a neutronic poison attains certain limits, the nuclear temperature coefficient of the moderator, which is highly negative in the absence of boron, may turn about and reach positive values, due to the strong thermal expansion of the water. A dynamical model of a PWR system is presented, facilitating a quick stability analysis related to the co-ordination of boric acid solution in the water and control-rod insertion in the core. (author)

  8. INFLUENCE RESEARCH OF COLD PLASTIC DEFORMATION ON DIFFUSION SATURATION PROCESS BY CARBON AND BORON OF THE LOW-CARBON AND BORON-CONTAINING ALLOYS

    Directory of Open Access Journals (Sweden)

    N. Yu. Filonenko

    2010-06-01

    Full Text Available This work is devoted to the study of influence of cold prestrain with degree of deformation within the range 0…40 % on diffusion saturation with boron and carbon for low-carbon and boron steels. It is determined that the plastic prestrain with degree of deformation 20 % at temperature 750 °С for the low-carbon steel promote increasing of boron-cementation layer thickness by 25 % and microhardness of perlite layer by 20 %.

  9. Boron adsorption on hematite and clinoptilolite

    International Nuclear Information System (INIS)

    Gainer, G.M.

    1993-01-01

    This thesis describes experiments performed to determine the suitability of boron as a potential reactive tracer for use in saturated-zone C-well reactive tracer studies for the Yucca Mountain Project (YMP). Experiments were performed to identify the prevalent sorption mechanism of boron and to determine adsorption of boron on hematite and clinoptilolite as a function of pH. These minerals are present in the Yucca Mountain tuff in which the C-well studies will be conducted. Evaluation of this sorption mechanism was done by determining the equilibration time of boron-mineral suspensions, by measuring changes in equilibrium to titrations, and by measuring electrophoretic mobility. Experiments were performed with the minerals suspended in NaCl electrolytes of concentrations ranging from 0.1 N NaCl to 0.001 N NaCl. Experimentalconditions included pH values between 3 and 12 and temperature of about 38 degrees C

  10. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Peterson, P.L.; Winters, J.

    1992-01-01

    A system has been added to the DIII-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose f the boron film is to reduce the levels of impurity atoms in the DIII-D plasmas. Experiments following the application of the boron film in DIII-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime

  11. Synthesis of hexagonal boron nitride graphene-like few layers

    Science.gov (United States)

    Yuan, S.; Toury, B.; Journet, C.; Brioude, A.

    2014-06-01

    Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

  12. Boron-carbide-aluminum and boron-carbide-reactive metal cermets. [B/sub 4/C-Al

    Science.gov (United States)

    Halverson, D.C.; Pyzik, A.J.; Aksay, I.A.

    1985-05-06

    Hard, tough, lighweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidated step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modules of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi..sqrt..in. These composites and methods can be used to form a variety of structural elements.

  13. Effects of Calcination Temperature on Preparation of Boron-Doped TiO2 by Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2012-01-01

    Full Text Available Boron-doped TiO2 photocatalyst was prepared by a modified sol-gel method. Being calcinated at temperatures from 300°C to 600°C, all the 3% B-TiO2 samples presented anatase TiO2 phase, and TiO2 crystallite sizes were calculated to be 7.6, 10.3, 13.6, and 27.3 nm, respectively. The samples were composed of irregular particles with rough surfaces in the size range within 3 μm. Ti atoms were in an octahedron skeleton and existed mainly in the form of Ti4+, while the Ti-O-B structure was the main boron existing form in the 3% B-TiO2 sample. When calcination temperature increased from 300°C to 600°C, specific surface area decreased sharply from 205.6 m2/g to 31.8 m2/g. The average pore diameter was 10.53 nm with accumulative pore volume of 0.244 mL/g for the 3% B-TiO2 sample calcinated at 400°C, which performed optimal photocatalytic degradation activity. After 90 min of UV-light irradiation, degradation rate of methyl orange was 96.7% on the optimized photocatalyst.

  14. High-temperature mechanical relaxation in glass-like B2O3

    International Nuclear Information System (INIS)

    Lomovskoj, V.A.

    1987-01-01

    The study of high-temperature mechanical relaxation in glass-like B 2 O 3 was carried out at the temperatures from 470 to 620 K using the method of internal friction at freely damped tortional vibrations (frequency range is 0.05 - 10 Hz) and forced torsional vibrations (frequency range is 0.1 -0.00001 Hz). Possible mechanisms of high-temperature mechanical relaxation are considered. It is shown that several possible mechanisms of high-temperature mechanical relaxation in glass-like B 2 O 3 can be singled out. Switching of B-O bridge bond between two boroxol cycles of boroxol grouping for oxygen vacancy in spatial structure of glass-like B 2 O 3 , formed as a result of thermal breaking of one out of three B-O bonds, according to diffusion theory of glass viscosity. The slip of one layer boroxol groupings as to another one in the presence of only tricoordinated boron atoms in the structure of glass-like B 2 O 3

  15. High temperature brazing of primary-system components in the nuclear field

    International Nuclear Information System (INIS)

    Belicic, M.; Fricker, H.W.; Iversen, K.; Leukert, W.

    1981-01-01

    Apart from the well-known welding procedures, high-temperature brazing is successfully applied in the manufacture of primary components in the field of nuclear reactor construction. This technique is applied in all cases where apart from sufficient resistance and high production safety importance is laid on dimensional stability without subsequent mechanical processing of the components. High-temperature brazing is therefore very important in the manufacture of fuel rod spacers or control rod guide tubes. In this context, during one brazing process many brazing seams have to be produced in extremely narrow areas and within small tolerances. As basic materials precipitation hardening alloys with a high nickel percentage, austenitic Cr-Ni-steels or the zirconium alloy Zry 4 are used. Generally applied are: boron free nickel or zirconium brazing filler metals. (orig.)

  16. Effect of Structure Factor on High-Temperature Ductility of Pipe Steels

    Science.gov (United States)

    Kolbasnikov, N. G.; Matveev, M. A.; Mishnev, P. A.

    2016-05-01

    Effects of various factors such as the grain size, the morphology of nonmetallic inclusions, and joint microalloying with boron and titanium on the high-temperature ductility of pipe steels are studied. Physical modeling of the conditions of cooling of the skin of a continuous-cast preform in the zone of secondary cooling in a Gleeble facility is performed. Technical recommendations are given for raising the hot ductility of steels under industrial conditions.

  17. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  18. Determination of boron in graphite, boron carbide and glass by ICP-MS, ICP-OES and conventional wet chemical methods

    International Nuclear Information System (INIS)

    Venkatesh, K.; Kamble, Granthali S.; Venkatesh, Manisha; Kumar, Sanjukta A.; Reddy, A.V.R.

    2014-01-01

    Boron is an important element of interest in nuclear reactor materials due to its high neutron absorption cross section (σ 0 =3837 barns for 10 B). In the present paper, R and D work and routinely used methods have been described for the analysis of case samples (1) Graphite where boron is present at trace levels, (2) Boron Carbide having boron concentration of about 80% and (3) Glass containing 4-6 % boron. (author)

  19. Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

    Science.gov (United States)

    Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

    2018-04-04

    Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

  20. Boron

    Science.gov (United States)

    Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

  1. Analyses of PWR boron dilution consequences with the Arrotta code

    International Nuclear Information System (INIS)

    Johanson, E.; Cheng, H.W.; Sehgal, B.R.

    1998-03-01

    During the past few years, major attention has been paid to analyzing the issue of reactivity initiated accidents (RIAs), of which the boron dilution event is of very special interest to the countries having pressurized water reactors (PWRs) in their nuclear power delivery systems. The scenario considered is that if an inadvertent accumulation of boron free water in one loop during reactor startup operations of a PWR and the inadvertent startup of the reactor coolant pump (RCP) in the loop. This could then lead to a rapid boron dilution in the core, which can in turn give rise to a power excursion. This report is devoted to studying the potential physical and thermal hydraulic consequences of a slug of diluted coolant entering the core after one RCP start under a couple of postulated cases. The severity of the consequences of such a scenario is primarily determined by the amount of positive reactivity insertion, and they are also related to the reactivity insertion rate. Therefore, in the report, detailed calculations and analyses have been carried out from case to case by using the well-known space-time kinetics code, ARROTTA. As a result, the spatial distribution for nodal power, fuel enthalpy, fuel temperature and clad outside temperature as well as the change in core reactivity, total core power and peak fuel temperature can be provided. In general, the maximum fuel enthalpy, peak fuel temperature, and clad outside temperature, for all the cases considered in the report, do not exceed their respective routine safety limitations because of the strong Doppler effect and moderator temperature feedback, except if the safety limitations on fuel enthalpy addition for high burnup fuel are drastically reduced

  2. Work Function Characterization of Potassium-Intercalated, Boron Nitride Doped Graphitic Petals

    Directory of Open Access Journals (Sweden)

    Patrick T. McCarthy

    2017-07-01

    Full Text Available This paper reports on characterization techniques for electron emission from potassium-intercalated boron nitride-modified graphitic petals (GPs. Carbon-based materials offer potentially good performance in electron emission applications owing to high thermal stability and a wide range of nanostructures that increase emission current via field enhancement. Furthermore, potassium adsorption and intercalation of carbon-based nanoscale emitters decreases work functions from approximately 4.6 eV to as low as 2.0 eV. In this study, boron nitride modifications of GPs were performed. Hexagonal boron nitride is a planar structure akin to graphene and has demonstrated useful chemical and electrical properties when embedded in graphitic layers. Photoemission induced by simulated solar excitation was employed to characterize the emitter electron energy distributions, and changes in the electron emission characteristics with respect to temperature identified annealing temperature limits. After several heating cycles, a single stable emission peak with work function of 2.8 eV was present for the intercalated GP sample up to 1,000 K. Up to 600 K, the potassium-intercalated boron nitride modified sample exhibited improved retention of potassium in the form of multiple emission peaks (1.8, 2.5, and 3.3 eV resulting in a large net electron emission relative to the unmodified graphitic sample. However, upon further heating to 1,000 K, the unmodified GP sample demonstrated better stability and higher emission current than the boron nitride modified sample. Both samples deintercalated above 1,000 K.

  3. Irradiation damage in boron carbide: point defects, clusters and helium bubbles

    International Nuclear Information System (INIS)

    Stoto, T.; Zuppiroli, L.

    1986-06-01

    Boron carbide is a refractory hard and light material of interest in nuclear technology (fission and also fusion). Transmission electron microscopy was used to examine the properties of radiation induced damage. Firstly, the production of point defects and their clustering was studied in samples irradiated by 1 MeV electron in a high voltage electron microscope at selected temperatures from 12 K to 1000 K. Secondly, conventional transmission electron microscopy was used to understand the production of helium bubbles in neutron irradiated boron carbide and their role in the generation of microcracks. Finally, the interaction between point defects and bubbles was also examined

  4. Comparison of boron and neon damage effects in boron ion-implanted resistors

    International Nuclear Information System (INIS)

    MacIver, B.A.

    1975-01-01

    Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10 000 Ω/square range were obtained with low temperature and voltage sensitivities and d.c. isolation. (author)

  5. High temperature heat capacities and electrical conductivities of boron carbides

    International Nuclear Information System (INIS)

    Matsui, Tsuneo; Arita, Yuri; Naito, Keiji; Imai, Hisashi

    1991-01-01

    The heat capacities and the electrical conductivities of B x C(x=3, 4, 5) were measured by means of direct heating pulse calorimetry in the temperature range from 300 to 1500 K. The heat capacities of B x C increased with increasing x value. This increase in the heat capacity is probably related to the change of the lattice vibration mode originated from the reduction of the stiffness of the intericosahedral chain accompanied with a change from C-B-C to C-B-B chains. A linear relationship between the logarithm of σT (σ is the electrical conductivity and T is the absolute temperature) of B x C and the reciprocal temperature was observed, indicating the presence of small polaron hopping as the predominant conduction mechanism. The electrical conductivity of B x C also increased with increasing x value (from 4 to 5) due to an increase of the polaron hopping of holes between carbon atoms at geometrically nonequivalent sites, since these nonequivalent sites of carbon atoms were considered to increase in either B 11 C icosahedra or in icosahedral chains with increasing x. The electrical conductivity of B 3 C was higher than that of B 4 C, which is probably due to the precipitation of high-conducting carbon. The thermal conductivity and the thermodynamic quantities of B 4 C were also determined precisely from the heat capacity value. (orig.)

  6. Strategy for designing stable and powerful nitrogen-rich high-energy materials by introducing boron atoms.

    Science.gov (United States)

    Wu, Wen-Jie; Chi, Wei-Jie; Li, Quan-Song; Li, Ze-Sheng

    2017-06-01

    One of the most important aims in the development of high-energy materials is to improve their stability and thus ensure that they are safe to manufacture and transport. In this work, we theoretically investigated open-chain N 4 B 2 isomers using density functional theory in order to find the best way of stabilizing nitrogen-rich molecules. The results show that the boron atoms in these isomers are aligned linearly with their neighboring atoms, which facilitates close packing in the crystals of these materials. Upon comparing the energies of nine N 4 B 2 isomers, we found that the structure with alternating N and B atoms had the lowest energy. Structures with more than one nitrogen atom between two boron atoms had higher energies. The energy of N 4 B 2 increases by about 50 kcal/mol each time it is rearranged to include an extra nitrogen atom between the two boron atoms. More importantly, our results also show that boron atoms stabilize nitrogen-rich molecules more efficiently than carbon atoms do. Also, the combustion of any isomer of N 4 B 2 releases more heat than the corresponding isomer of N 4 C 2 does under well-oxygenated conditions. Our study suggests that the three most stable N 4 B 2 isomers (BN13, BN24, and BN34) are good candidates for high-energy molecules, and it outlines a new strategy for designing stable boron-containing high-energy materials. Graphical abstract The structural characteristics, thermodynamic stabilities, and exothermic properties of nitrogen-rich N 4 B 2 isomers were investigated by means of density functional theory.

  7. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Petersen, P.I.; Winter, J.

    1991-09-01

    A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

  8. Modeling of interstitial diffusion of ion-implanted boron

    International Nuclear Information System (INIS)

    Velichko, O.I.; Knyazheva, N.V.

    2009-01-01

    A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are created continuously during annealing due to generation, dissolution, or rearrangement of the clusters of impurity atoms which are formed in the ion-implanted layers with impurity concentration above the solubility limit. The local elastic stresses arising due to the difference of boron atomic radius and atomic radius of silicon also contribute to the generation of boron interstitials. A simulation of boron redistribution during thermal annealing for 60 s at a temperature of 850 C has been carried out. The calculated profile agrees well with the experimental data. A number of the parameters of interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 12 nm. It was also obtained that approximately 1.94% of boron atoms were converted to the interstitial sites, participated in the fast interstitial migration, and then became immobile again transferring into a substitutional position or forming the electrically inactive complexes with crystal lattice defects. (authors)

  9. Effects of Boron-Incorporation in a V-Containing Zr-Based AB2 Metal Hydride Alloy

    Directory of Open Access Journals (Sweden)

    Shiuan Chang

    2017-11-01

    Full Text Available In this study, boron, a metalloid element commonly used in semiconductor applications, was added in a V-containing Zr-based AB2 metal hydride alloy. In general, as the boron content in the alloy increased, the high-rate dischargeability, surface exchange current, and double-layer capacitance first decreased and then increased whereas charge-transfer resistance and dot product of charge-transfer resistance and double-layer capacitance changed in the opposite direction. Electrochemical and gaseous phase characteristics of two boron-containing alloys, with the same boron content detected by the inductively coupled plasma optical emission spectrometer, showed significant variations in performances due to the difference in phase abundance of a newly formed tetragonal V3B2 phase. This new phase contributes to the increases in electrochemical high-rate dischargeability, surface exchange current, charge-transfer resistances at room, and low temperatures. However, the V3B2 phase does not contribute to the hydrogen storage capacities in either gaseous phase and electrochemical environment.

  10. Effect of boron on the hot ductility of 2.25Cr1Mo steel

    International Nuclear Information System (INIS)

    Song, S.-H.; Guo, A.-M.; Shen, D.-D.; Yuan, Z.-X.; Liu, J.; Xu, T.-D.

    2003-01-01

    The effect of boron on the hot ductility of 2.25Cr1Mo steel is investigated by means of a Gleeble 2000 thermomechanical simulator. There is a trough in the hot ductility-temperature curve, which is located between 1000 and 700 deg. C. The ductility trough shifts to lower temperatures with increasing boron content and the hot brittle range becomes shallow and narrow. In general, boron may improve the steel hot ductility in that it may retard the formation of pro-eutectoid ferrite and increase grain boundary cohesion. These effects may be related to the segregation of boron to austenite grain boundaries

  11. Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

    Science.gov (United States)

    Heilmann, M.; Bashouti, M.; Riechert, H.; Lopes, J. M. J.

    2018-04-01

    Van der Waals heterostructures comprising of hexagonal boron nitride and graphene are promising building blocks for novel two-dimensional devices such as atomically thin transistors or capacitors. However, demonstrators of those devices have been so far mostly fabricated by mechanical assembly, a non-scalable and time-consuming method, where transfer processes can contaminate the surfaces. Here, we investigate a direct growth process for the fabrication of insulating hexagonal boron nitride on high quality epitaxial graphene using plasma assisted molecular beam epitaxy. Samples were grown at varying temperatures and times and studied using atomic force microscopy, revealing a growth process limited by desorption at high temperatures. Nucleation was mostly commencing from morphological defects in epitaxial graphene, such as step edges or wrinkles. Raman spectroscopy combined with x-ray photoelectron measurements confirm the formation of hexagonal boron nitride and prove the resilience of graphene against the nitrogen plasma used during the growth process. The electrical properties and defects in the heterostructures were studied with high lateral resolution by tunneling current and Kelvin probe force measurements. This correlated approach revealed a nucleation apart from morphological defects in epitaxial graphene, which is mediated by point defects. The presented results help understanding the nucleation and growth behavior during van der Waals epitaxy of 2D materials, and point out a route for a scalable production of van der Waals heterostructures.

  12. Separation and Analysis of Boron Isotope in High Plant by Thermal Ionization Mass Spectrometry

    Directory of Open Access Journals (Sweden)

    Qingcai Xu

    2015-01-01

    Full Text Available Knowledge of boron and its isotope in plants is useful to better understand the transposition and translocation of boron within plant, the geochemical behavior in the interface between soil and plant, and the biogeochemical cycle of boron. It is critical to develop a useful method to separate boron from the plant for the geochemical application of boron and its isotope. A method was developed for the extraction of boron in plant sample, whose isotope was determined by thermal ionization mass spectrometry. The results indicated that this method of dry ashing coupled with two-step ion-exchange chromatography is powerful for the separation of boron in plant sample with large amounts of organic matters completely. The ratios of boron isotope composition in those plant tissue samples ranged from -19.45‰ to +28.13‰ (total range: 47.58‰ with a mean value of 2.61±11.76‰ SD. The stem and root isotopic compositions were lower than those in flower and leaf. The molecular mechanism of boron isotope may be responsible for the observed variation of boron isotopic composition and are considered as a useful tool for the better understanding of boron cycling process in the environment and for the signature of living systems.

  13. Polyvinylpolypyrrolidone-Supported Boron Trifluoride; Highly Efficient Catalyst for the Synthesis of N-tert-Butyl Amides

    Directory of Open Access Journals (Sweden)

    Masoud Mokhtary

    2012-01-01

    Full Text Available Highly efficient method for the preparation of N-tert-butyl amides by reaction of nitriles with tert-butyl acetate is described using polyvinylpolypyrrolidone-supported boron trifluoride (PVPP-BF3 at 70°C in good to excellent yields. Selective amidation of benzonitrile in the presence of acetonitrile was also achieved. polyvinylpolypyrrolidone-boron trifluoride complex shows non-corrosive and stable solid catalyst elevated Lewis acid property.

  14. Evaluation of two hybrid poplar clones as constructed wetland plant species for treating saline water high in boron and selenium, or waters only high in boron

    Science.gov (United States)

    Wetland mesocosms were constructed to assess two salt- and B-tolerant hybrid poplar clones (Populus trichocarpa ×P. deltoides×P. nigra '345-1' and '347-14') for treating saline water high in boron (B) and selenium (Se). In addition, a hydroponic experiment was performed to test the B tolerance and B...

  15. Chemical separation of boron isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF/sub 3/ gas and the liquid molecular addition compounds of BF/sub 3/. Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF/sub 3/ solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references.

  16. Chemical separation of boron isotopes

    International Nuclear Information System (INIS)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF 3 gas and the liquid molecular addition compounds of BF 3 . Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF 3 solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references

  17. Boron-containing thioureas for neutron capture therapy

    International Nuclear Information System (INIS)

    Ketz, H.

    1993-01-01

    Melanin is produced in large amounts in malignant melanotic melanomas. Because thiourea compounds are covalently incorporated into melanin during its biosynthesis, the preparation of boronated thiourea-derivatives is of particular interest for the BNCT (Boron Neutron Capture Therapy). Accumulation of boron in tumors by means of boronated thiourea-derivatives may therefore provide levels of 10 B which are useful for BNCT. In BNCT the tumor containing the boron compound is irradiated with epithermal neutrons to generate He- and Li-nuclei from the 10 B which can then destroy the tumor cells. Because of the short ranges of these particles (approximately one cell diameter) the damage will be almost exclusively confined to the tumor leaving normal tissue unharmed. High accumulation of 2-mercapto-1-methylimidazole (methimazole) in melanotic melanomas has been described in the literature. Boronated derivatives of methimazole were therefore synthesized. Boron was in the form of a boronic acid, a nido-carbonate and a mercaptoundeca hydro-closo-dodecaborate (BSH). The synthesis of the boron cluster derivatives of methimazole (nido-carborate- and BSH-derivatives) with 9 resp. 12 boron atoms in the molecule were expected to achieve higher concentrations of boron in the tumor than in the case of the boronic acid compound with its single boron atom. (orig.) [de

  18. Structure prediction of boron-doped graphene by machine learning

    Science.gov (United States)

    M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

    2018-06-01

    Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

  19. Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

    OpenAIRE

    Xu, Rui; He, Daowei; Zhang, Yuhan; Wu, Bing; Liu, Fengyuan; Meng, Lan; Liu, Jun-Fang; Wu, Qisheng; Shi, Yi; Wang, Jinlan; Nie, Jia-Cai; Wang, Xinran; He, Lin

    2014-01-01

    Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and grap...

  20. Model for the boron-doping dependence of the critical temperature of superconducting boron-doped diamond

    Czech Academy of Sciences Publication Activity Database

    Šopík, Břetislav

    2009-01-01

    Roč. 11, č. 10 (2009), 103026/1-103026/10 ISSN 1367-2630 R&D Projects: GA AV ČR IAA100100712 Grant - others:GAČR(CZ) GA202/07/0597 Institutional research plan: CEZ:AV0Z10100521 Keywords : superconductivity * boron-doped diamond Subject RIV: BE - Theoretical Physics Impact factor: 3.312, year: 2009

  1. A Combination of Boron Nitride Nanotubes and Cellulose Nanofibers for the Preparation of a Nanocomposite with High Thermal Conductivity.

    Science.gov (United States)

    Zeng, Xiaoliang; Sun, Jiajia; Yao, Yimin; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

    2017-05-23

    With the current development of modern electronics toward miniaturization, high-degree integration and multifunctionalization, considerable heat is accumulated, which results in the thermal failure or even explosion of modern electronics. The thermal conductivity of materials has thus attracted much attention in modern electronics. Although polymer composites with enhanced thermal conductivity are expected to address this issue, achieving higher thermal conductivity (above 10 W m -1 K -1 ) at filler loadings below 50.0 wt % remains challenging. Here, we report a nanocomposite consisting of boron nitride nanotubes and cellulose nanofibers that exhibits high thermal conductivity (21.39 W m -1 K -1 ) at 25.0 wt % boron nitride nanotubes. Such high thermal conductivity is attributed to the high intrinsic thermal conductivity of boron nitride nanotubes and cellulose nanofibers, the one-dimensional structure of boron nitride nanotubes, and the reduced interfacial thermal resistance due to the strong interaction between the boron nitride nanotubes and cellulose nanofibers. Using the as-prepared nanocomposite as a flexible printed circuit board, we demonstrate its potential usefulness in electronic device-cooling applications. This thermally conductive nanocomposite has promising applications in thermal interface materials, printed circuit boards or organic substrates in electronics and could supplement conventional polymer-based materials.

  2. The Effect of Process and Model Parameters in Temperature Prediction for Hot Stamping of Boron Steel

    Directory of Open Access Journals (Sweden)

    Chaoyang Sun

    2013-01-01

    Full Text Available Finite element models of the hot stamping and cold die quenching process for boron steel sheet were developed using either rigid or elastic tools. The effect of tool elasticity and process parameters on workpiece temperature was investigated. Heat transfer coefficient between blank and tools was modelled as a function of gap and contact pressure. Temperature distribution and thermal history in the blank were predicted, and thickness distribution of the blank was obtained. Tests were carried out and the test results are used for the validation of numerical predictions. The effect of holding load and the size of cooling ducts on temperature distribution during the forming and the cool die quenching process was also studied by using two models. The results show that higher accuracy predictions of blank thickness and temperature distribution during deformation were obtained using the elastic tool model. However, temperature results obtained using the rigid tool model were close to those using the elastic tool model for a range of holding load.

  3. Test study of boron nitride as a new detector material for dosimetry in high-energy photon beams

    Science.gov (United States)

    Poppinga, D.; Halbur, J.; Lemmer, S.; Delfs, B.; Harder, D.; Looe, H. K.; Poppe, B.

    2017-09-01

    The aim of this test study is to check whether boron nitride (BN) might be applied as a detector material in high-energy photon-beam dosimetry. Boron nitride exists in various crystalline forms. Hexagonal boron nitride (h-BN) possesses high mobility of the electrons and holes as well as a high volume resistivity, so that ionizing radiation in the clinical range of the dose rate can be expected to produce a measurable electrical current at low background current. Due to the low atomic numbers of its constituents, its density (2.0 g cm-3) similar to silicon and its commercial availability, h-BN appears as possibly suitable for the dosimetry of ionizing radiation. Five h-BN plates were contacted to triaxial cables, and the detector current was measured in a solid-state ionization chamber circuit at an applied voltage of 50 V. Basic dosimetric properties such as formation by pre-irradiation, sensitivity, reproducibility, linearity and temporal resolution were measured with 6 MV photon irradiation. Depth dose curves at quadratic field sizes of 10 cm and 40 cm were measured and compared to ionization chamber measurements. After a pre-irradiation with 6 Gy, the devices show a stable current signal at a given dose rate. The current-voltage characteristic up to 400 V shows an increase in the collection efficiency with the voltage. The time-resolved detector current behavior during beam interrupts is comparable to diamond material, and the background current is negligible. The measured percentage depth dose curves at 10 cm  ×  10 cm field size agreed with the results of ionization chamber measurements within  ±2%. This is a first study of boron nitride as a detector material for high-energy photon radiation. By current measurements on solid ionization chambers made from boron nitride chips we could demonstrate that boron nitride is in principle suitable as a detector material for high-energy photon-beam dosimetry.

  4. Dielectric track detectors and their applications in boron studies

    International Nuclear Information System (INIS)

    Mysak, F.; Krejci, M.

    1982-01-01

    Examples are presented of the applications of autoradiography using plastic films in the study of the distribution of boron in metal materials and its translocation owing to diffusion annealing. Alpha radiation is induced in the material by thermal neutrons while the reaction 10 B(n,α) 7 Li is used. Diffusion processes were studied in the transition zone between the base material and the overlay in hard alloy surfacing. The metallographically treated samples were placed on cellulose nitrate films and irradiated in a reactor. Autoradiograms showed that up to an annealing temperature of 800 degC there was no notable diffusion. Only at 900 degC migration occurred of boron from the transition zone to the base material. Also studied was the distribution of boron in soldered joints of nickel heat resisting alloys. The joints were subjected to homogenization annealing and the gradual disintegration was monitored of boride phases in dependence on the temperature and duration of annealing. Inside the joint boron practically disappeared and it finally appeared in the base material outside of the initial interface. (M.D.)

  5. Equations of state and melting curve of boron carbide in the high-pressure range of shock compression

    Energy Technology Data Exchange (ETDEWEB)

    Molodets, A. M., E-mail: molodets@icp.ac.ru; Golyshev, A. A.; Shakhrai, D. V. [Russian Academy of Sciences, Institute for Problems in Chemical Physics (Russian Federation)

    2017-03-15

    We have constructed the equations of state for crystalline boron carbide B{sub 11}C (C–B–C) and its melt under high dynamic and static pressures. A kink on the shock adiabat for boron carbide has been revealed in the pressure range near 100 GPa, and the melting curve with negative curvature in the pressure range 0–120 GPa has been calculated. The results have been used for interpreting the kinks on the shock adiabat for boron carbide in the pressure range of 0–400 GPa.

  6. Radiation shielding properties of high performance concrete reinforced with basalt fibers infused with natural and enriched boron

    Energy Technology Data Exchange (ETDEWEB)

    Zorla, Eyüp; Ipbüker, Cagatay [University of Tartu, Institute of Physics (Estonia); Biland, Alex [US Basalt Corp., Houston (United States); Kiisk, Madis [University of Tartu, Institute of Physics (Estonia); Kovaljov, Sergei [OÜ Basaltest, Tartu (Estonia); Tkaczyk, Alan H. [University of Tartu, Institute of Physics (Estonia); Gulik, Volodymyr, E-mail: volodymyr.gulik@gmail.com [Institute for Safety Problems of Nuclear Power Plants, Lysogirska 12, of. 201, 03028 Kyiv (Ukraine)

    2017-03-15

    Highlights: • Basalt fiber infused with natural and enriched boron in varying proportions. • Gamma-ray attenuation remains stable with addition of basalt-boron fiber. • Improvement in neutron shielding for nuclear facilities producing fast fission spectrum. • Basalt-boron fiber could decrease the shielding thickness in thermal spectrum reactors. - Abstract: The importance of radiation shielding is increasing in parallel with the expansion of the application areas of nuclear technologies. This study investigates the radiation shielding properties of two types of high strength concrete reinforced with basalt fibers infused with 12–20% boron oxide, containing varying fractions of natural and enriched boron. The gamma-ray shielding characteristics are analyzed with the help of the WinXCom, whereas the neutron shielding characteristics are modeled and computed by Monte Carlo Serpent code. For gamma-ray shielding, the attenuation coefficients of the studied samples do not display any significant variation due to the addition of basalt-boron fibers at any mixing proportion. For neutron shielding, the addition of basalt-boron fiber has negligible effects in the case of very fast neutrons (14 MeV), but it could considerably improve the neutron shielding of concrete for nuclear facilities producing a fast fission spectrum (e.g. with reactors as BN-800, FBTR) and thermal neutron spectrum (Light Water Reactors (LWR)). It was also found that basalt-boron fiber could decrease the thickness of radiation shielding material in thermal spectrum reactors.

  7. Radiation shielding properties of high performance concrete reinforced with basalt fibers infused with natural and enriched boron

    International Nuclear Information System (INIS)

    Zorla, Eyüp; Ipbüker, Cagatay; Biland, Alex; Kiisk, Madis; Kovaljov, Sergei; Tkaczyk, Alan H.; Gulik, Volodymyr

    2017-01-01

    Highlights: • Basalt fiber infused with natural and enriched boron in varying proportions. • Gamma-ray attenuation remains stable with addition of basalt-boron fiber. • Improvement in neutron shielding for nuclear facilities producing fast fission spectrum. • Basalt-boron fiber could decrease the shielding thickness in thermal spectrum reactors. - Abstract: The importance of radiation shielding is increasing in parallel with the expansion of the application areas of nuclear technologies. This study investigates the radiation shielding properties of two types of high strength concrete reinforced with basalt fibers infused with 12–20% boron oxide, containing varying fractions of natural and enriched boron. The gamma-ray shielding characteristics are analyzed with the help of the WinXCom, whereas the neutron shielding characteristics are modeled and computed by Monte Carlo Serpent code. For gamma-ray shielding, the attenuation coefficients of the studied samples do not display any significant variation due to the addition of basalt-boron fibers at any mixing proportion. For neutron shielding, the addition of basalt-boron fiber has negligible effects in the case of very fast neutrons (14 MeV), but it could considerably improve the neutron shielding of concrete for nuclear facilities producing a fast fission spectrum (e.g. with reactors as BN-800, FBTR) and thermal neutron spectrum (Light Water Reactors (LWR)). It was also found that basalt-boron fiber could decrease the thickness of radiation shielding material in thermal spectrum reactors.

  8. The ternary system nickel-boron-silicon

    International Nuclear Information System (INIS)

    Lugscheider, E.; Reimann, H.; Knotek, O.

    1975-01-01

    The ternary system Nickel-Boron-Silicon was established at 850 0 C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiBsub(4-x) with x approximately 0.7 and SiB 6 were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for Ni 6 Si 2 B, the phase Nisub(4,6)Si 2 B published by Uraz and Rundqvist can better be described by the formula Nisub(4.29)Si 2 Bsub(1.43). In relation to further investigations we measured melting temperatures in ternary Ni-10 B-Si alloys by differential thermoanalysis. (author)

  9. Lattice dynamics of {alpha} boron and of boron carbide; Proprietes vibrationnelles du bore {alpha} et du carbure de bore

    Energy Technology Data Exchange (ETDEWEB)

    Vast, N

    1999-07-01

    The atomic structure and the lattice dynamics of {alpha} boron and of B{sub 4}C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In {alpha} boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B{sub 4}C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  10. Compatibility of heat resistant alloys with boron carbide, 5

    International Nuclear Information System (INIS)

    Baba, Shinichi; Kurasawa, Toshimasa; Endow, Taichi; Someya, Hiroyuki; Tanaka, Isao.

    1986-08-01

    This paper includes an experimental result of out-of-pile compatibility and capsule design for irradiation test in Japan Materials Testing Reactor (JMTR). The compatibility between sheath material and neutron absorber materials for control rod devices (CRD) was examined for potential use in a very high temperature reactor (VHTR) which is under development at JAERI. The purpose of the compatibility tests are preliminary evaluation of safety prior to irradiation tests. Preliminary compatibility evaluation was concerned with three items as follows : 1) Lithium effects on the penetrating reaction of Incoloy 800H alloy in contact with a mixture of boronated graphite and lithium hydroxide powders, 2) Short term tensile properties of Incoloy 800H and Hastelloy XR alloy reacted with boronated graphite and fracture mode analysis, 3) Reaction behavior of both alloys under transient power conditions of a VHTR. It was clear that the reaction rate constant of the Incoloy 800H alloy was accelerated by doping lithium hydroxide into the boron carbide and graphite powder. The mechanical properties of Incoloy 800H and Hastelloy XR alloy reacted with boronated graphite were decreased. Ultimate tensile strength and tensile ductilities at temperatures over 850 deg C were reduced, but there was no change in the proof (yield) stress. Both alloys exhibited a brittle intergranular fracture mode during transient power conditions of a VHTR and also exhibited severe penetration. Irradiation capsules for compatibility test were designed to simulate three irradiation conditions of VHTR: 1) steady state for VHTR, 2) Transient power condition, 3) Service limited life of CRD. Capsule irradiation experiments have been carried out satisfactorily and thus confirm the validity of the capsule design procedure. (author)

  11. Anomalous Seebeck coefficient in boron carbides

    International Nuclear Information System (INIS)

    Aselage, T.L.; Emin, D.; Wood, C.; Mackinnon, I.D.R.; Howard, I.A.

    1987-01-01

    Boron carbides exhibit an anomalously large Seebeck coefficient with a temperature coefficient that is characteristic of polaronic hopping between inequivalent sites. The inequivalence in the sites is associated with disorder in the solid. The temperature dependence of the Seebeck coefficient for materials prepared by different techniques provides insight into the nature of the disorder

  12. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  13. Low temperature irradiation effects on iron-boron based amorphous metallic alloys

    International Nuclear Information System (INIS)

    Audouard, Alain.

    1983-01-01

    Three iron-boron amorphous alloys and the crystalline Fe 3 B alloy have been irradiated at liquid hydrogen temperature. 2,4 MeV electron irradiation induces the creation of point defects in the amorphous alloys as well as in the crystalline Fe 3 B alloy. These point defects can be assimilated to iron ''Frenkel pairs''. They have been characterized by determining their intrinsic electrical resistivity and their formation volume. The displacement threshold energy of iron atoms has also been determined. 10 B fission fragments induce, in these amorphous alloys, displacement cascades which lead to stable vacancy rich zones. This irradiation also leads to a structural disorder in relation with the presence of defects. 235 U fission fragments irradiation modifies drastically the structure of the amorphous alloys. The results have been interpreted on the basis of the coexistence of two opposite processes which induce local disorder and crystallisation respectively [fr

  14. The effect of boron additions on irradiation-induced order changes in Ni3Al intermetallic compounds

    International Nuclear Information System (INIS)

    Njah, N.; Gilbon, D.; Dimitrov, O.

    1995-01-01

    The effects of boron additions (0.1 wt%) on the kinetics of atomic order changes in a Ni 76 Al 24 intermetallic compound, under 1 MeV electron irradiation, were investigated at temperatures of 293 K and 410 K and displacement rates of 0.09 x 10 -3 to 4.7 x 10 -3 dpa.s -1 . In these irradiation conditions, a state of residual order was obtained for long irradiation times, characterized by a steady state order parameter S∞; it corresponds to a competition between two opposite features: irradiation disordering and thermal reordering enhanced by irradiation. Boron additions did not affect the efficiency of irradiation-induced disordering: the disordering cross-section (or, equivalently, the number of replacements per displacement var-epsilon) were comparable with and without a boron addition. By contrast, the S∞ values at 293 K were much lower in the alloy containing boron. Since boron does not change the disordering rate, the large difference between the values obtained in undoped and in boron-doped alloys shows that the reordering rate is strongly reduced by the presence of boron. Thus, boron modifies the mobility of the defects responsible for the irradiation-enhanced diffusion. The data on dislocation-loop size and the reordering kinetics suggest that vacancies are trapped by boron at low temperatures and immobilized, probably by the formation of a boron-vacancy complex. The effect becomes weaker at higher displacement rates and higher temperatures, probably due to the boron-vacancy complexes becoming unstable. It is proposed that two different reordering mechanisms may be operative at 293 K, according to the presence of boron: reordering is promoted by vacancy migration in the Ni 76 Al 24 alloy, whereas in the Ni 76 Al 24 (0.1 wt%B) alloy, it is promoted by the migration of split-interstitials or/and of low-mobility vacancy-boron complexes

  15. Lattice Thermal Conductivity of Ultra High Temperature Ceramics ZrB2 and HfB2 from Atomistic Simulations

    Science.gov (United States)

    Lawson, John W.; Murray, Daw S.; Bauschlicher, Charles W., Jr.

    2011-01-01

    Atomistic Green-Kubo simulations are performed to evaluate the lattice thermal conductivity for single crystals of the ultra high temperature ceramics ZrB2 and HfB2 for a range of temperatures. Recently developed interatomic potentials are used for these simulations. Heat current correlation functions show rapid oscillations which can be identified with mixed metal-Boron optical phonon modes. Agreement with available experimental data is good.

  16. Phase transitions to 120 GPa for shock-compressed pyrolytic and hot-pressed boron nitride

    International Nuclear Information System (INIS)

    Gust, W.H.; Young, D.A.

    1977-01-01

    Shock-compression characteristics of two types of hexagonal graphitelike boron nitride have been investigated. Highly oriented very pure pyrolytic boron nitride exhibits shock-velocity versus particle-velocity discontinuities that appear to be manifestations of the initiation of a sluggish phase transition. This transition begins at 20 GPa and is driven to completion (melting) at 75 GPa. Discontinuities in the plot for impure hot-pressed boron nitride indicate initiation at 10 GPa and completion at 20 GPa. The (U/sub s/, U/sub p/) plots follow essentially the same paths for 4.0 < U/sub p/ < 5.2 km/sec. No evidence for a transition to a metalliclike state was seen. Temperature calculations indicate that the material is liquid above approx.80 GPa

  17. Fracture toughness of borides formed on boronized ductile iron

    International Nuclear Information System (INIS)

    Sen, Ugur; Sen, Saduman; Koksal, Sakip; Yilmaz, Fevzi

    2005-01-01

    In this study, fracture toughness properties of boronized ductile iron were investigated. Boronizing was realized in a salt bath consisting of borax, boric acid and ferro-silicon. Boronizing heat treatment was carried out between 850 and 950 deg. C under the atmospheric pressure for 2-8 h. Borides e.g. FeB, Fe 2 B formed on ductile iron was verified by X-ray diffraction (XRD) analysis, SEM and optical microscope. Experimental results revealed that longer boronizing time resulted in thicker boride layers. Optical microscope cross-sectional observation of borided layers showed dentricular morphology. Both microhardness and fracture toughness of borided surfaces were measured via Vickers indenter. The harnesses of borides formed on the ductile iron were in the range of 1160-2140 HV 0.1 and fracture toughness were in the range of 2.19-4.47 MPa m 1/2 depending on boronizing time and temperature

  18. The vapour phase deposition of boron on titanium by the reaction between gaseous boron trichloride and titanium metal. Final report

    International Nuclear Information System (INIS)

    Cameron, D.J.; Shelton, R.A.J.

    1965-03-01

    The reaction, between boron trichloride vapour and titanium has been investigated in the temperature range 200 - 1350 deg. C. It has been found that an initial reaction leads to the formation of titanium tetrachloride and the deposition of boron on titanium, but that except for reactions between 900 and 1000 deg. C, the system is complicated by the formation of lower titanium chlorides due to secondary reactions between the titanium and titanium tetrachloride

  19. Perennial soybean seeds coated with high doses of boron and zinc ...

    African Journals Online (AJOL)

    The objective of this work was to study combinations of high doses of boron (B) and zinc (Zn) in the recoating of perennial soybean seeds, in order to provide these nutrients to the future plants. The physical, physiological and nutritional characteristics of the coated seeds and initial development of plants in a greenhouse ...

  20. Boron-Loaded Silicone Rubber Scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  1. Thick boron carbide coatings for protection of tokamak first wall and divertor

    International Nuclear Information System (INIS)

    Buzhinskij, O.I.; Semenets, Yu.M.

    1999-01-01

    A review of characteristics of various types of boron carbide coatings considered as candidate materials for protection of tokamak inner surfaces against high energy heat fluxes is presented. Such coatings are produced by various methods: chemical vapor deposition by means of chloride and fluoride techniques, gas conversion, plasma spray and reaction-sintering. Contrary to pure carbon materials, B 4 C has much lower chemical and high-temperature sputtering, is capable to oxygen gettering and lower hydrogen recycling. In contrast to thin boronization films, the thick coatings can resist high heat fluxes such as in tokamak divertors. Comparative analysis shows that coatings produced by the diffusion methods, such as fluoride CVD and gas conversion, are more resistent to heat loads, and one of the most promising candidates are the fluoride CVD coatings. (orig.)

  2. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-02-23

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

  3. Titanium reinforced boron-polyimide composite

    Science.gov (United States)

    Clark, G. A.; Clayton, K. I.

    1969-01-01

    Processing techniques for boron polyimide prepreg were developed whereby composites could be molded under vacuum bag pressure only. A post-cure cycle was developed which resulted in no loss in room temperature mechanical properties of the composite at any time during up to 16 hours at 650 F. A design utilizing laminated titanium foil was developed to achieve a smooth transition of load from the titanium attachment points into the boron-reinforced body of the structure. The box beam test article was subjected to combined bending and torsional loads while exposed to 650 F. Loads were applied incrementally until failure occurred at 83% design limit load.

  4. 2.4. The kinetics of hydrochloric-acid decomposition of calcined concentrate of boron raw material of Ak-Arkhar Deposit

    International Nuclear Information System (INIS)

    Mirsaidov, U.M.; Kurbonov, A.S.; Mamatov, E.D.

    2015-01-01

    Present article is devoted to kinetics of hydrochloric-acid decomposition of calcined concentrate of boron raw material of Ak-Arkhar Deposit. The experimental data of dependence of hydrochloric-acid decomposition of calcined boron raw material for boron oxide extraction on temperature (20-80 deg C) and process duration (15-60 min) were considered. It was defined that at temperature increasing the boron oxide extraction from borosilicate raw material increases from 24.1 till 86.8%. The constants of decomposition rate of boron raw material were calculated.

  5. Determination of free and combined carbon in boron carbide

    International Nuclear Information System (INIS)

    Shankaran, P.S.; Kulkarni, Amit S.; Pandey, K.L.; Ramanjaneyulu, P.S.; Yadav, C.S.; Sayi, Y.S.; Ramakumar, K.L.

    2009-01-01

    A simple, sensitive and fast method for the determination of free and combined carbon in boron carbide samples, based on combustion in presence of oxygen at different temperatures, has been developed. Method has been standardized by analyzing mixture of two different boron carbide samples. Error associated with the method in the determination of free carbon is less than 5%. (author)

  6. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  7. High temperature ductility of austenitic alloys exposed to thermal neutrons

    International Nuclear Information System (INIS)

    Watanabe, K.; Kondo, T.; Ogawa, Y.

    1982-01-01

    Loss of high temperature ductility due to thermal neutron irradiation was examined by slow strain rate test in vacuum up to 1000 0 C. The results on two heats of Hastelloy alloy X with different boron contents were analyzed with respect to the influence of the temperatures of irradiation and tensile tests, neutron fluence and the associated helium production due to nuclear transmutation reaction. The loss of ductility was enhanced by increasing either temperature or neutron fluence. Simple extrapolations yielded the estimated threshold fluence and the end-of-life ductility values at 900 and 1000 0 C in case where the materials were used in near-core regions of VHTR. The observed relationship between Ni content and the ductility loss has suggested a potential utilization of Fe-based alloys for seathing of the neutron absorber materials

  8. Influence of dopants, particularly carbon, on β-rhombohedral boron

    Science.gov (United States)

    Werheit, H.; Flachbart, K.; Pristáš, G.; Lotnyk, D.; Filipov, V.; Kuhlmann, U.; Shitsevalova, N.; Lundström, T.

    2017-09-01

    Due to the high affinity of carbon to boron, the preparation of carbon-free boron is problematic. Even high-purity (6 N) β-rhombohedral boron contains 30-60 ppm of C. Hence, carbon affects the boron physical properties published so far more or less significantly. We studied well-defined carbon-doped boron samples based on pure starting material carefully annealed with up to about 1% C, thus assuring homogeneity. We present and discuss their electrical conductivity, optical absorption, luminescence and phonon spectra. Earlier attempts of other authors to determine the conductivity of C-doped boron are revised. Our results allow estimating the effects of oxygen and iron doping on the electrical conductivity using results taken from literature. Discontinuities at low T impair the electronic properties.

  9. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  10. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  11. Boron tolerance in NS wheat lines

    Directory of Open Access Journals (Sweden)

    Brdar Milka

    2006-01-01

    Full Text Available Boron is an essential micronutrient for higher plants. Present in excessive amounts boron becomes toxic and can limit plant growth and yield. Suppression of root growth is one of the symptoms of boron toxicity in wheat. This study was undertaken to investigate the response of 10 perspective NS lines of wheat to high concentrations of boron. Analysis of root growth was done on young plants, germinated and grown in the presence of different concentrations of boric acid (0, 50,100 and 150 mg/1. Significant differences occurred between analyzed genotypes and treatments regarding root length. Average suppression of root growth was between 11,6 and 34,2%, for line NS 252/02 are even noted 61,4% longer roots at treatments in relation to the control. Lines with mean suppression of root growth less than 20% (NS 101/02, NS 138/01, NS 53/03 and NS 73/02 may be considered as boron tolerant. Spearmans coefficients showed high level of agreement regarding rang of root length for genotypes treated with 100 and 150 mg H3BO3/l.

  12. Boiling in the presence of boron compounds in light water reactors

    International Nuclear Information System (INIS)

    Nakath, Richard

    2014-01-01

    The scope of the thesis on boiling in the presence of boron compounds in light water reactors was to study the effects of the boron compound addition on the heat removal from the fuel elements. For an effective cooling of the fuel elements in case of boiling processes a high heat transfer coefficient is of importance. Up to now experimental studies were not performed under reactor specific conditions, for instance with respect to the geometry of the flow conditions, high temperature and pressure levels were not represented. Therefore the experiments in the frame of the thesis were using reactor specific parameters. The test facility SECA (study into the effects of coolant additives) was designed and constructed. The experiments simulated the conditions of normal PWR operation, accidental PWR and accidental BWR conditions.

  13. Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

    International Nuclear Information System (INIS)

    Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

    1987-01-01

    Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

  14. Electron microscopy of boron carbide before and after electron irradiation

    International Nuclear Information System (INIS)

    Stoto, T.; Zuppiroli, L.; Beauvy, M.; Athanassiadis, T.

    1984-06-01

    The microstructure of boron carbide has been studied by electron microscopy and related to the composition of the material. After electron irradiations in an usual transmission electron microscope and in a high voltage electron microscope at different temperatures and fluxes no change of these microstructures have been observed but a sputtering of the surface of the samples, which has been studied quantitatively [fr

  15. Green Synthesis of Boron Carbonitride with High Capacitance

    Directory of Open Access Journals (Sweden)

    Dongping Chen

    2018-03-01

    Full Text Available Boron carbonitrides (BCN have attracted great interest in superhard or energy storage materials. In this work, thin BCN sheets were synthesized at 250 °C by a facile and green solvothermal method. The structure and morphology were characterized by X-ray diffraction (XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. Based on the results of electrochemical experiments, the thin BCN sheet exhibited excellent capacitance performance (343.1 F/g at a current density of 0.5 A/g and cycling stability (90%, which showed high potential applications in supercapacitors.

  16. Investigation of Hard Boron Rich Solids: Osmium Diboride and β-Rhombohedral Boron

    Science.gov (United States)

    Hebbache, M.; Živković, D.

    Recently, we succeeded in synthesizing three osmium borides, i.e., OsB1.1, Os2B3 and OsB2. Up to date, almost nothing is known about the physical properties of these materials. Microhardness measurements show that OsB2 is extremely hard. Ab initio calculations show that it is due to formation of covalent bonds between boron atoms. OsB2 is also a low compressibility material. It can be used for hard coatings. The β-rhombohedral polymorph of boron is the second hardest elemental crystal (H ≈ 33 GPa). It is also very light and a p-type semiconductor. In early 1970s, it has been shown that the doping of boron with 3d transition elements enhances its hardness by about 25%. We predict that, in general, heavily doped samples MBx, with x ≤ 31 or equivalently a dopant concentration larger than 3.2 at.%, should be ultrahard, i.e., H > 43 GPa. The relevant dopants M are Al, Cu, Sc, Mn, Mg and Li. In addition to these properties, boron-rich materials have a very low volatility, a high chemical inertness and high melting point. They are suitable for applications under extreme conditions and thermoelectric equipment.

  17. Production of advanced materials by methods of self-propagating high-temperature synthesis

    CERN Document Server

    Tavadze, Giorgi F

    2013-01-01

    This translation from the original Russian book outlines the production of a variety of materials by methods of self-propagating high-temperature synthesis (SHS). The types of materials discussed include: hard, refractory, corrosion and wear-resistant materials, as well as other advanced and speciality materials. The authors address the issue of optimal parameters for SHS reactions occurring during processes involving a preliminary metallothermic reduction stage, and they calculate this using thermodynamic approaches. In order to confirm the effectiveness of this approach, the authors describe experiments focussing on the synthesis of elemental crysalline boron, boron carbides and nitrides. Other parts of this brief include theoretical and experimental results on single-stage production of hard alloys on the basis of titanium and zirconium borides, as well as macrokinetics of degassing and compaciton of SHS-products.This brief is suitable for academics, as well as those working in industrial manufacturing com...

  18. Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

    Science.gov (United States)

    Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

    2018-05-01

    Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

  19. Defects in boron carbide: First-principles calculations and CALPHAD modeling

    International Nuclear Information System (INIS)

    Saengdeejing, Arkapol; Saal, James E.; Manga, Venkateswara Rao; Liu Zikui

    2012-01-01

    The energetics of defects in B 4+x C boron carbide and β-boron are studied through first-principles calculations, the supercell phonon approach and the Debye–Grüneisen model. It is found that suitable sublattice models for β-boron and B 4+x C are B 101 (B,C) 4 and B 11 (B,C) (B,C,Va) (B,Va) (B,C,Va), respectively. The thermodynamic properties of B 4+x C, β-boron, liquid and graphite are modeled using the CALPHAD approach based on the thermochemical data from first-principles calculations and experimental phase equilibrium data in the literature. The concentrations of various defects are then predicted as a function of carbon composition and temperature.

  20. Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs

    Energy Technology Data Exchange (ETDEWEB)

    Mannix, A. J.; Zhou, X. -F.; Kiraly, B.; Wood, J. D.; Alducin, D.; Myers, B. D.; Liu, X.; Fisher, B. L.; Santiago, U.; Guest, J. R.; Yacaman, M. J.; Ponce, A.; Oganov, A. R.; Hersam, M. C.; Guisinger, N. P.

    2015-12-17

    At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes. Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal.

  1. Optimization of the boron content in FeAl (40 at. % Al) alloys

    International Nuclear Information System (INIS)

    Webb, G.; Juliet, P.; Lefort, A.

    1993-01-01

    FeAl intermetallic alloys are of interest for several high temperature applications due to excellent oxidation resistance, low density, and relatively low cost. Attempts to further increase the ductility of iron-rich FeAl have met with, at best, marginal success. Of the ductilization techniques employed, B doping appears to be a promising method for obtaining enhanced ductility and high strength in iron rich FeAl. Boron additions enhance the ductility of these alloys by increasing the grain boundary cohesive strength which reduces the tendency for intergranular fracture. The goal of the present work was to determine the optimum B concentration for increasing ambient temperature ductility. To accomplish this, a series of three iron rich FeAl alloys of similar Fe stoichiometries were doped with different levels of B (0,12, and 80 wppm). Secondary ion mass spectrometry (SIMS) was conducted on these alloys for evaluation of the B partitioning after consolidation by extrusion. Ambient temperature tensile testing and SEM fractography were then used to evaluate the effect of such additions on ambient temperature ductility in air. The results of these experiments indicate that optimum ductility is obtained from a homogeneous distribution of boron in which boride precipitation is limited

  2. Ab-initio study of thermodynamic properties of boron nanowire at atomic scale

    Science.gov (United States)

    Bhuyan, Prabal D.; Gupta, Sanjeev K.; Sonvane, Y.; Gajjar, P. N.

    2018-04-01

    In the present work, we have optimized ribbon like zigzag structure of boron (B) nanowire (NW) and investigated vibrational and thermodynamic properties using quasi-harmonic approximations (QHA). All positive phonon in the phonon dispersive curve have confirmed dynamical stability of ribbon B-NW. The thermodynamic properties, like Debye temperature, internal energy and specific heat, are calculated as a function of temperature. The variation of specific heat is proportional to T3 Debye law at lower temperature for B-NW, while it becomes constant above room temperature at 1200K; obeys Dulong-Petit's law. The high Debye temperature of 1120K is observed at ambient temperature, which can be attributed to high thermal conductivity. Our study shows that B-NW with high thermal conductivity could be the next generation electron connector for nanoscale electronic devices.

  3. Electron microscopy study of radiation effects in boron carbide

    International Nuclear Information System (INIS)

    Stoto, T.

    1987-03-01

    Boron carbide is a disordered non-stoechiometric material with a strongly microtwinned polycristallyne microstructure. This ceramic is among the candidate materials for the first wall coating in fusion reactor and is used as a neutron absorber in the control rods of fast breeder reactors. The present work deals with the nature of radiation damage in this solid. Because of helium internal production, neutron irradiated boron carbide is affected by swelling and by a strong microcracking which can break up a pellet in fine powder. These processes are rather intensitive to the irradiation parameters (temperature, flux and even neutron spectrum). Transmission electron microscopy of samples irradiated by the fast neutrons of a reactor, the electrons of a high voltage electron microscope and of samples implanted with helium ions was used to understand the respective roles of helium and point defects in the processes of swelling and microcracking. The design of an irradiation chamber for helium implantation at controlled temperature from 600 to 1700 0 C was an important technical part of this work [fr

  4. Current status of boron neutron capture therapy of high grade gliomas and recurrent head and neck cancer

    Directory of Open Access Journals (Sweden)

    Barth Rolf F

    2012-08-01

    Full Text Available Abstract Boron neutron capture therapy (BNCT is a biochemically targeted radiotherapy based on the nuclear capture and fission reactions that occur when non-radioactive boron-10, which is a constituent of natural elemental boron, is irradiated with low energy thermal neutrons to yield high linear energy transfer alpha particles and recoiling lithium-7 nuclei. Clinical interest in BNCT has focused primarily on the treatment of high grade gliomas, recurrent cancers of the head and neck region and either primary or metastatic melanoma. Neutron sources for BNCT currently have been limited to specially modified nuclear reactors, which are or until the recent Japanese natural disaster, were available in Japan, United States, Finland and several other European countries, Argentina and Taiwan. Accelerators producing epithermal neutron beams also could be used for BNCT and these are being developed in several countries. It is anticipated that the first Japanese accelerator will be available for therapeutic use in 2013. The major hurdle for the design and synthesis of boron delivery agents has been the requirement for selective tumor targeting to achieve boron concentrations in the range of 20 μg/g. This would be sufficient to deliver therapeutic doses of radiation with minimal normal tissue toxicity. Two boron drugs have been used clinically, a dihydroxyboryl derivative of phenylalanine, referred to as boronophenylalanine or “BPA”, and sodium borocaptate or “BSH” (Na2B12H11SH. In this report we will provide an overview of other boron delivery agents that currently are under evaluation, neutron sources in use or under development for BNCT, clinical dosimetry, treatment planning, and finally a summary of previous and on-going clinical studies for high grade gliomas and recurrent tumors of the head and neck region. Promising results have been obtained with both groups of patients but these outcomes must be more rigorously evaluated in larger

  5. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  6. Effects of surface coating on weld growth of resistance spot-welded hot-stamped boron steels

    International Nuclear Information System (INIS)

    Ji, Chang Wook; Lee, Hyun Ju; Kim, Yang Do; Jo, Il Guk; Choi, Il Dong; Park, Yeong Do

    2014-01-01

    Aluminum-silicon-based and zinc-based metallic coatings have been widely used for hot-stamped boron steel in automotive applications. In this study, resistance spot weldability was explored by investigating the effects of the properties of metallic coating layers on heat development and nugget growth during resistance spot welding. In the case of the aluminum-silicon-coated hot-stamped boron steel, the intermetallic coating transformed into a liquid film that covered the faying interface. A wide, weldable current range was obtained with slow heat development because of low contact resistance and large current passage. In the case of the zinc-coated hot-stamped boron steel, a buildup of liquid and vapor formation under large vapor pressure was observed at the faying interface because of the high contact resistance and low vaporization temperature of the intermetallic layers. With rapid heat development, the current passage was narrow because of the limited continuous layer at the faying interface. A more significant change in nugget growth was observed in the zinc coated hot-stamped boron steel than in the aluminum-silicon-coated hot-stamped boron steel.

  7. Microhardness of boron, titanium, and nitrogen implanted steel

    International Nuclear Information System (INIS)

    Sowa, M.; Szyszko, W.; Sielanko, J.; Glusiec, L.

    1989-01-01

    Mechanically polished steel (1H18N9T) and (15GTM) samples are implanted with boron, titanium, and nitrogen ions, with dose ranging from 10 16 to 10 17 ions/cm 2 . The implantation energy varied from 100 to 250 keV. Implanted samples are heat-treated at 400 to 800 0 C in vacuum. The microhardness of implanted samples is measured by using a Hanneman tester with loads ranging from 2 to 40 g. The influence of annealing temperature on microhardness of the implanted layers is determined. The diffusion of boron from the implanted layers is also investigated by using the secondary ion mass spectrometer. The diffusion coefficients of boron in steel are determined. (author)

  8. Highly solvatochromic emission of electron donor-acceptor compounds containing propanedioato boron electron acceptors

    NARCIS (Netherlands)

    Brouwer, A.M.; Bakker, N.A.C.; Wiering, P.G.; Verhoeven, J.W.

    1991-01-01

    Light-induced electron transfer occurs in bifunctional compounds consisting of 1,3-diphenylpropanedioato boron oxalate or fluoride electron acceptors and simple aromatic electron-donor groups, linked by a methylene bridge; fluorescence from the highly polar charge-transfer excited state is

  9. Boron removal from aqueous solutions by activated carbon impregnated with salicylic acid

    International Nuclear Information System (INIS)

    Celik, Z. Ceylan; Can, B.Z.; Kocakerim, M. Muhtar

    2008-01-01

    In this study, the removal of boric acid from aqueous solution by activated carbon impregnated with salicylic acid was studied in batch system. pH, adsorbent amount, initial boron concentration, temperature, shaking rate and salicylic acid film thickness were chosen as parameters. Boron removal efficiencies increased with increasing adsorbent amount, temperature and pH, decreasing initial boron concentration. As thickness of salicylic acid film on activated carbon becomes thin up to 0.088 nm, the efficiency increased, and then, the efficiency decreased with becoming thinner than 0.088 nm of salicylic acid film. Shaking rate was no effect on removal efficiency. In result, it was determined that the use of salicylic acid as an impregnant for activated carbon led to the increase of the amount of boron adsorbed. A lactone ring, being the most appropriate conformation, forms between boric acid and -COOH and -OH groups of salicylic acid

  10. Boron removal from aqueous solutions by activated carbon impregnated with salicylic acid

    Energy Technology Data Exchange (ETDEWEB)

    Celik, Z. Ceylan [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey)], E-mail: zcelik@atauni.edu.tr; Can, B.Z. [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey); Kocakerim, M. Muhtar [Department of Chemical Engineering, Atatuerk University, Faculty of Engineering, 25240 Erzurum (Turkey)

    2008-03-21

    In this study, the removal of boric acid from aqueous solution by activated carbon impregnated with salicylic acid was studied in batch system. pH, adsorbent amount, initial boron concentration, temperature, shaking rate and salicylic acid film thickness were chosen as parameters. Boron removal efficiencies increased with increasing adsorbent amount, temperature and pH, decreasing initial boron concentration. As thickness of salicylic acid film on activated carbon becomes thin up to 0.088 nm, the efficiency increased, and then, the efficiency decreased with becoming thinner than 0.088 nm of salicylic acid film. Shaking rate was no effect on removal efficiency. In result, it was determined that the use of salicylic acid as an impregnant for activated carbon led to the increase of the amount of boron adsorbed. A lactone ring, being the most appropriate conformation, forms between boric acid and -COOH and -OH groups of salicylic acid.

  11. Network structure and thermal stability study of high temperature seal glass

    Science.gov (United States)

    Lu, K.; Mahapatra, M. K.

    2008-10-01

    High temperature seal glass has stringent requirement on glass thermal stability, which is dictated by glass network structures. In this study, a SrO-La2O3-Al2O3-B2O3-SiO2 based glass system was studied using nuclear magnetic resonance, Raman spectroscopy, and x-ray diffraction for solid oxide cell application purpose. Glass structural unit neighboring environment and local ordering were evaluated. Glass network connectivity as well as silicon and boron glass former coordination were calculated for different B2O3:SiO2 ratios. Thermal stability of the borosilicate glasses was studied after thermal treatment at 850 °C. The study shows that high B2O3 content induces BO4 and SiO4 structural unit ordering, increases glass localized inhomogeneity, decreases glass network connectivity, and causes devitrification. Glass modifiers interact with either silicon- or boron-containing structural units and form different devitrified phases at different B2O3:SiO2 ratios. B2O3-free glass shows the best thermal stability among the studied compositions, remaining stable after thermal treatment for 200 h at 850 °C.

  12. High temperature diffusion induced liquid phase joining of a heat resistant alloy

    International Nuclear Information System (INIS)

    Wikstrom, N.P.; Egbewande, A.T.; Ojo, O.A.

    2008-01-01

    Transient liquid phase bonding (TLP) of a nickel base superalloy, Waspaloy, was performed to study the influence of holding time and temperature on the joint microstructure. Insufficient holding time for complete isothermal solidification of liquated insert caused formation of eutectic-type microconstituent along the joint centerline region in the alloy. In agreement with prediction by conventional TLP diffusion models, an increase in bonding temperature for a constant gap size, resulted in decrease in the time, t f, required to form a eutectic-free joint by complete isothermal solidification. However, a significant deviation from these models was observed in specimens bonded at and above 1175 deg. C. A reduction in isothermal solidification rate with increased temperature was observed in these specimens, such that a eutectic-free joint could not be achieved by holding for a time period that produced complete isothermal solidification at lower temperatures. Boron-rich particles were observed within the eutectic that formed in the joints prepared at the higher temperatures. An overriding effect of decrease in boron solubility relative to increase in its diffusivity with increase in temperature, is a plausible important factor responsible for the reduction in isothermal solidification rate at the higher bonding temperatures

  13. Depth profiling of hydrogen passivation of boron in Si(100)

    Science.gov (United States)

    Huang, L. J.; Lau, W. M.; Simpson, P. J.; Schultz, P. J.

    1992-08-01

    The properties of SiO2/p-Si were studied using variable-energy positron-annihilation spectroscopy and Raman spectroscopy. The oxide film was formed by ozone oxidation in the presence of ultraviolet radiation at room temperature. Both the positron-annihilation and Raman analyses show that chemical cleaning of boron-doped p-type Si(100) using concentrated hydrofluoric acid prior to the oxide formation leads to hydrogen incorporation in the semiconductor. The incorporated hydrogen passivates the boron dopant by forming a B-H complex, the presence of which increases the broadening of the line shape in the positron-annihilation analysis, and narrows the linewidth of the Raman peak. Annealing of the SiO2/Si sample at a moderate temperature of 220 °C in vacuum was found sufficient to dissociate the complex and reactivate the boron dopant.

  14. Surface modification of the hard metal tungsten carbide-cobalt by boron ion implantation

    International Nuclear Information System (INIS)

    Mrotchek, I.

    2007-01-01

    In the present thesis ion beam implantation of boron is studied as method for the increasement of the hardness and for the improvement of the operational characteristics of cutting tools on the tungsten carbide-cobalt base. For the boron implantation with 40 keV energy and ∼5.10 17 ions/cm 2 fluence following topics were shown: The incoerporation of boron leads to a deformation and remaining strain of the WC lattice, which possesses different stregth in the different directions of the elementary cell. The maximum of the deformation is reached at an implantation temperature of 450 C. The segregation of the new phases CoWB and Co 3 W was detected at 900 C implantation temperature. At lower temperatures now new phases were found. The tribological characteristics of WC-Co are improved. Hereby the maxiaml effect was measured for implantation temperatures from 450 C to 700 C: Improvement of the microhardness by the factor 2..2.5, improvement of the wear resistance by the factor 4. The tribological effects extend to larger depths than the penetration depth of the boron implantation profile. The detected property improvements of the hard metal H3 show the possibility of a practical application of boron ion implantation in industry. The effects essential for a wer decreasement are a hardening of the carbide phase by deformation of the lattice, a hardening of the cobalt binding material and the phase boundaries because of the formation of a solid solution of the implanted boron atoms in Co and by this a blocking of the dislocation movement and the rupture spreading under load

  15. High-Pressure Design of Advanced BN-Based Materials

    Directory of Open Access Journals (Sweden)

    Oleksandr O. Kurakevych

    2016-10-01

    Full Text Available The aim of the present review is to highlight the state of the art in high-pressure design of new advanced materials based on boron nitride. Recent experimental achievements on the governing phase transformation, nanostructuring and chemical synthesis in the systems containing boron nitride at high pressures and high temperatures are presented. All these developments allowed discovering new materials, e.g., ultrahard nanocrystalline cubic boron nitride (nano-cBN with hardness comparable to diamond, and superhard boron subnitride B13N2. Thermodynamic and kinetic aspects of high-pressure synthesis are described based on the data obtained by in situ and ex situ methods. Mechanical and thermal properties (hardness, thermoelastic equations of state, etc. are discussed. New synthetic perspectives, combining both soft chemistry and extreme pressure–temperature conditions are considered.

  16. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen

    Science.gov (United States)

    Makarenko, L. F.; Lastovskii, S. B.; Yakushevich, H. S.; Moll, M.; Pintilie, I.

    2018-04-01

    Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation.

  17. Solid-state nuclear magnetic resonance studies of phosphorus and boron in coals and combustion residues

    Energy Technology Data Exchange (ETDEWEB)

    Burchill, P.; Howarth, O.W.; Richards, D.G.; Sword, B.J. (British Coal Corporation, Stoke Orchard (UK). Coal Research Establishment)

    1990-04-01

    Solid-state nuclear magnetic resonance spectroscopy with magic angle spinning (MAS-n.m.r.) was used to study the occurrence of phosphorus and boron in coal, and their fate on combustion. These elements are only minor components of coal, but may significantly influence the utilization properties. {sup 31} P MAS-n.m.r. spectroscopy has confirmed that phosphorus is present in coal predominantly as apatite. This mineral is thermally stable under oxidizing conditions, and survives largely unaltered in high temperature ashes. However, under the semi-reducing bed conditions of certain stoker-fired boilers, it may be decomposed, volatilizing the phosphorus. The {sup 31}P MAS-n.m.r. spectra of bonded deposits show phosphorus in a markedly different coordination environment to that in apatite, the chemical shift suggesting aluminium phosphate or boron phosphate. {sup 11}B MAS-n.m.r. spectra of coals exhibit resonances due to both trigonal and tetrahedrally coordinated boron. Trigonal boron is probably present as tourmaline, but the nature of the tetrahedral boron is less certain; it may be held in tetrahedral sites within certain clay minerals. In common with phosphorus, boron may be volatilized during combustion. The {sup 11}B MAS-n.m.r. spectra of bonded deposits show a tetrahedral resonance with a chemical shift quite consistent with that of boron phosphate. 39 refs., 9 figs., 5 tabs.

  18. Boron isotopic enrichment by displacement chromatography

    International Nuclear Information System (INIS)

    Mohapatra, K.K.; Bose, Arun

    2014-01-01

    10 B enriched boron is used in applications requiring high volumetric neutron absorption (absorption cross section- 3837 barn for thermal and 1 barn for 1 MeV fast neutron). It is used in fast breeder reactor (as control rod material), in neutron counter, in Boron Neutron Capture Therapy etc. Owing to very small separation factor, boron isotopic enrichment is a complex process requiring large number of separation stages. Heavy Water Board has ventured in industrial scale production of 10 B enriched boron using Exchange Distillation Process as well as Ion Displacement Chromatography Process. Ion Displacement Chromatography process is used in Boron Enrichment Plant at HWP, Manuguru. It is based on isotopic exchange between borate ions (B(OH) 4 - ) on anion exchange resin and boric acid passing through resin. The isotopic exchange takes place due to difference in zero point energy of 10 B and 11 B

  19. Microwave digestion techniques applied to determination of boron by ICP-AES in BNCT program

    International Nuclear Information System (INIS)

    Farias, Silvia S.; Di Santo, Norberto R.; Garavaglia, Ricardo N.; Pucci, Gladys N.; Batistoni, Daniel A.; Schwint, Amanda E.

    1999-01-01

    . Digestion in open vessels may conduct to analyte losses due to vaporization of volatile compounds. The mineralization in closed vessels, at high pressure, does not allow this losses and increase the efficiency to destroy organic mater due to the combined action of pressure and temperature. This paper describes the development of analytical methodologies to determine boron at trace and ultra trace levels. (author)

  20. Analysis of boron dilution in a four-loop PWR

    International Nuclear Information System (INIS)

    Sun, J.G.; Sha, W.T.

    1995-03-01

    Thermal mixing and boron dilution in a pressurized water reactor were analyzed with COMMIX codes. The reactor system was the four-loop Zion reactor. Two boron dilution scenarios were analyzed. In the first scenario, the plant is in cold shutdown and the reactor coolant system has just been filled after maintenance on the steam generators. To flush the air out of the steam generator tubes, a reactor coolant pump (RCP) is started, with the water in the pump suction line devoid of boron and at the same temperature as the coolant in the system. In the second scenario, the plant is at hot standby and the reactor coolant system has been heated to operating temperature after a long outage. It is assumed that an RCP is started, with the pump suction line filled with cold unborated water, forcing a slug of diluted coolant down the downcomer and subsequently through the reactor core. The subsequent transient thermal mixing and boron dilution that would occur in the reactor system is simulated for these two scenarios. The reactivity insertion rate and the total reactivity are evaluated and a sensitivity study is performed to assess the accuracy of the numerical modeling of the geometry of the reactor coolant system

  1. Synthesis and high temperature stability of amorphous Si(B)CN-MWCNT composite nanowires

    Science.gov (United States)

    Bhandavat, Romil; Singh, Gurpreet

    2012-02-01

    We demonstrate synthesis of a hybrid nanowire structure consisting of an amorphous polymer-derived silicon boron-carbonitride (Si-B-C-N) shell with a multiwalled carbon nanotube core. This was achieved through a novel process involving preparation of a boron-modified liquid polymeric precursor through a reaction of trimethyl borate and polyureasilazane under atmospheric conditions; followed by conversion of polymer to glass-ceramic on carbon nanotube surfaces through controlled heating. Chemical structure of the polymer was studied by liquid-NMR while evolution of various ceramic phases was studied by Raman spectroscopy, solid-NMR, Fourier transform infrared and X-ray photoelectron spectroscopy. Electron microscopy and X-ray diffraction confirms presence of amorphous Si(B)CN coating on individual nanotubes for all specimen processed below 1400 degree C. Thermogravimetric analysis, followed by TEM revealed high temperature stability of the carbon nanotube core in flowing air up to 1300 degree C.

  2. Chemical vapor deposition of hexagonal boron nitride films in the reduced pressure

    International Nuclear Information System (INIS)

    Choi, B.J.

    1999-01-01

    Hexagonal boron nitride (h-BN) films were deposited onto a graphite substrate in reduced pressure by reacting ammonia and boron tribromide at 800--1,200 C. The growth rate of h-BN films was dependent on the substrate temperature and the total pressures. The growth rate increased with increasing the substrate temperature at the pressure of 2 kPa, while it showed a maximum value at the pressures of 4 and 8 kPa. The temperature at which the maximum growth rate occurs decreased with increasing total pressure. With increasing the substrate temperature and total pressure, the apparent grain size increased and the surface morphology showed a rough, cauliflower-like structure

  3. Highly-focused boron implantation in diamond and imaging using the nuclear reaction {sup 11}B(p, α){sup 8}Be

    Energy Technology Data Exchange (ETDEWEB)

    Ynsa, M.D., E-mail: m.ynsa@uam.es [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Ramos, M.A. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física de la Materia Condensada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Skukan, N. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia); Torres-Costa, V. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Jakšić, M. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia)

    2015-04-01

    Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm{sup 2} and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction {sup 11}B(p, α){sup 8}Be at E{sub p} = 660 keV. This reaction has a high Q-value (8.59 MeV for α{sub 0} and 5.68 MeV for α{sub 1}) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

  4. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  5. The diffusion bonding of silicon carbide and boron carbide using refractory metals

    International Nuclear Information System (INIS)

    Cockeram, B.V.

    1999-01-01

    Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 microm to 100 microm) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both α-SiC and β-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the α-SiC and β-SiC polytypes were similar

  6. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Aggarwal, J.

    1997-01-01

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO 2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  7. Chemical erosion of sintered boron carbide due to H+ impact

    International Nuclear Information System (INIS)

    Davis, J.W.; Haasz, A.A.

    1990-06-01

    The production of hydrocarbons and boron hydrides due to H + bombardment of sintered B 4 C has been investigated as a function of sample temperature and incident ion energy. While hydrocarbon production was observed, the yields were approximately two orders of magnitude smaller than observed for graphite. There was no evidence to indicate the production of any volatile boron-containing compounds. (3 figs., 11 refs.)

  8. Some problems connected with boron determination by atomic absorption spectroscopy and the sensitivity improvement

    Directory of Open Access Journals (Sweden)

    JELENA J. SAVOVIC

    2001-08-01

    Full Text Available Two atomizers were compared: an N2O–C2H2 flame and a stabilized U-shaped DC arc with aerosol supply. Both the high plasma temperature and the reducing atmosphere obtained by acetylene addition to the argon stream substantially increase the sensitivity of boron determination by atomic absorption spectroscopy (AAS when the arc atomizer is used. The results were compared with those for silicon as a control element. The experimental characteristic concentrations for both elements were compared with the computed values. The experimentally obtained characteristic concentration for boron when using the arc atomizer was in better agreement with the calculated value. It was estimated that the influence of stable monoxide formation on the sensitivity for both elements was about the same, but reduction of analyte and formation of non-volatile carbide particles was more important for boron, which is the main reason for the low sensitivity of boron determination using a flame atomizer. The use of an arc atomizer suppresses this interference and significantly improves the sensitivity of the determination.

  9. ISOBORDAT: An Online Data Base on Boron Isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Pennisi, M.; Adorni-Braccesi, A.; Andreani, D.; Gori, L.; Gonfiantini, R. [Istituto di Geoscienze e Georisorse, CNR, Pisa (Italy); Sciuto, P. F. [Servizio Geologico, Sismico e dei Suoli, D.G. Ambiente e Difesa del Suolo e della Costa, Regione Emilia Romagna, Bologna (Italy)

    2013-07-15

    From 1986, boron isotope data in natural substances increased sharply in scientific publications. Analytical difficulties derived from complex geochemical matrices have been faced and interlaboratory calibrations reported in the boron literature. Boron isotopes are nowdays applied to investigate boron origin and migration in natural waters, sources of boron contamination, water-rock interactions and also contribute to water resource management. This is especially important in those areas where boron content exceeds the local regulations for drinking water supply and boron sources need to be identified. ISOBORDAT, an interactive database on boron isotope composition and content in natural waters is presented to the wider community of boron isotope users. The database's structure, scope and applications are reported, along with a discussion on {delta}{sup 11}B values obtained in Italian waters. In the database boron data are structured in the following categories: rainwater, rivers, lakes, groundwater and potential contaminants. New categories (medium and high enthalpy fluids from volcanic and geothermal areas) are anticipated. ISOBORDAT aims to be as interactive as possible and will be developed taking into account information and suggestions received. The database is continually undergoing revision to keep pace with continuous data publication. Indications of data that are missing at present are greatly appreciated. (author)

  10. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Kumar, N.; Radhika, R.; Kozakov, A.T.; Pandian, R.; Chakravarty, S.; Ravindran, T.R.; Dash, S.; Tyagi, A.K.

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  11. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  12. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  13. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Fitzsimmons, M.; Pynn, R.

    1997-01-01

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  14. Modelling the evaporation of boron species. Part 1: Alkali-free borosilicate glass melts

    NARCIS (Netherlands)

    Limpt, J.A.C. van; Beerkens, R.G.C.; Cook, S.; O'Connor, R.; Simon, J.

    2011-01-01

    A laboratory test facility has been used to measure the boron evaporation rates from borosilicate glass melts. The impact of furnace atmosphere composition and glass melt composition on the temperature dependent boron evaporation rates has been investigated experimentally. In Part 1 of this paper

  15. Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Siwei; Zeng Bin; Feng Zude; Liu Yongsheng; Yang Wenbin; Cheng Laifei; Zhang Litong

    2010-01-01

    A two-layer boron carbide coating is deposited on a graphite substrate by chemical vapor deposition from a CH 4 /BCl 3 /H 2 precursor mixture at a low temperature of 950 o C and a reduced pressure of 10 KPa. Coated substrates are annealed at 1600 o C, 1700 o C, 1800 o C, 1900 o C and 2000 o C in high purity argon for 2 h, respectively. Structural evolution of the coatings is explored by electron microscopy and spectroscopy. Results demonstrate that the as-deposited coating is composed of pyrolytic carbon and amorphous boron carbide. A composition gradient of B and C is induced in each deposition. After annealing, B 4 C crystallites precipitate out of the amorphous boron carbide and grow to several hundreds nanometers by receiving B and C from boron-doped pyrolytic carbon. Energy-dispersive spectroscopy proves that the crystallization is controlled by element diffusion activated by high temperature annealing, after that a larger concentration gradient of B and C is induced in the coating. Quantified Raman spectrum identifies a graphitization enhancement of pyrolytic carbon. Transmission electron microscopy exhibits an epitaxial growth of B 4 C at layer/layer interface of the annealed coatings. Mechanism concerning the structural evolution on the basis of the experimental results is proposed.

  16. Boron carbide in pile behaviour Rapsodie experience

    International Nuclear Information System (INIS)

    Kryger, B.; Colin, M.

    1983-04-01

    Results concerning boron carbide irradiation experiments performed in RAPSODIE up to 10 22 .cm - 3 capture density in the temperature range 600-1100 0 lead to the following main conclusions: initial density and grain size lowering contribute to swelling decrease but density is the major parameter for swelling limitation; swelling rate can vary in a wide range (ratio 1 to 3) according to combinations of density (1.8 to 2.3) and grain size (10 to 50 μm) values; a swelling balance reveals that the most important contribution to swelling should be a high density of helium small bubbles (<400 A); helium retention increases with density and grain size and decreases with temperature elevation. A diffusion law is proposed to describe the rate of helium release

  17. Designing your boron-charging system

    International Nuclear Information System (INIS)

    Miller, J.

    1979-01-01

    High-pressure positive-displacement pumps used in the boron-charging setups of pressurized-water (PWR) nuclear plants because of their inherently high efficiencies over a wide range of pressures and speeds are described. Hydrogen-saturated water containing 4-12% boric acid is fed to the pump from a volume-control tank under a gas blanket. Complicated piping and the pulsation difficulties associated with reciprocating pumps make hydrogen-saturated boron-charging systems a challenge to the designer. The article describes the unusual hydraulics of the systems to help assure a trouble-free design

  18. Impurity and particle recycling reduction by boronization in JT-60U

    International Nuclear Information System (INIS)

    Higashijima, S.; Sugie, T.; Kubo, H.; Tsuji, S.; Shimada, M.; Asakura, N.; Hosogane, N.; Kawano, Y.; Nakamura, H.; Itami, K.; Sakasai, A.; Shimizu, K.; Ando, T.; Saidoh, M.

    1995-01-01

    In JT-60U boronization using decaborane was carried out. Boronization reduced the oxygen impurity in OH discharges and shortened the wall conditioning after the vacuum vessel vent and consequently enabled JT-60U to produce clean plasmas easily except for NB heated plasmas. After boronization, particle recycling was reduced drastically in OH and NB discharges. High confinement plasmas were obtained including high β p mode and H-mode discharges. In the latest boronization part of divertor plates were replaced with B 4 C coated tiles with a B 4 C thickness similar 300 μm. After introducing B 4 C divertor tiles, an explosive generation of boron particles from the tiles was observed. By the combined effects of boronization with decaborane and boron generation from B 4 C tiles, oxygen impurity was so low that oxygen line signals were reduced to noise levels after the latest boronization. On the other hand, boron burst from the B 4 C tiles restricted the operation of JT-60U. ((orig.))

  19. Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

    International Nuclear Information System (INIS)

    Wilking, S.; Ebert, S.; Herguth, A.; Hahn, G.

    2013-01-01

    The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems to be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects

  20. The Study on Weldability of Boron Steel and Hot-Stamped Steel by Using Laser Heat Source (Ⅲ) - Comparison on Laser Weldability of Boron Steel and Hot -Stamped Steel-

    Energy Technology Data Exchange (ETDEWEB)

    Choi, So Young; Kim, Jong Do [Korea Maritime and Ocean University, Busan (Korea, Republic of); Kim, Jong Su [Korea Institute of Machinery and Materials, Daejeon (Korea, Republic of)

    2015-01-15

    This study was conducted to compare the laser weldability of boron steel and hot-stamped steel. In general, boron steel is used in the hot-stamping process. Hot-stamping is a method for simultaneously forming and cooling boron steel in a press die after heating it to the austenitizing temperature. Hot-stamped steel has a strength of 1500 MPa or more. Thus, in this study, the laser weldability of boron steel and that of hot-stamped steel were investigated and compared. A continuous wave disk laser was used to produce butt and lap joints. In the butt welding, the critical cooling speed at which full penetration was obtained in the hot-stamped steel was lower than that of boron steel. In the lap welding, the joint widths were similar regardless of the welding speed when full penetration was obtained.

  1. The Study on Weldability of Boron Steel and Hot-Stamped Steel by Using Laser Heat Source (Ⅲ) - Comparison on Laser Weldability of Boron Steel and Hot -Stamped Steel-

    International Nuclear Information System (INIS)

    Choi, So Young; Kim, Jong Do; Kim, Jong Su

    2015-01-01

    This study was conducted to compare the laser weldability of boron steel and hot-stamped steel. In general, boron steel is used in the hot-stamping process. Hot-stamping is a method for simultaneously forming and cooling boron steel in a press die after heating it to the austenitizing temperature. Hot-stamped steel has a strength of 1500 MPa or more. Thus, in this study, the laser weldability of boron steel and that of hot-stamped steel were investigated and compared. A continuous wave disk laser was used to produce butt and lap joints. In the butt welding, the critical cooling speed at which full penetration was obtained in the hot-stamped steel was lower than that of boron steel. In the lap welding, the joint widths were similar regardless of the welding speed when full penetration was obtained

  2. Isotope engineering of van der Waals interactions in hexagonal boron nitride

    Science.gov (United States)

    Vuong, T. Q. P.; Liu, S.; van der Lee, A.; Cuscó, R.; Artús, L.; Michel, T.; Valvin, P.; Edgar, J. H.; Cassabois, G.; Gil, B.

    2018-02-01

    Hexagonal boron nitride is a model lamellar compound where weak, non-local van der Waals interactions ensure the vertical stacking of two-dimensional honeycomb lattices made of strongly bound boron and nitrogen atoms. We study the isotope engineering of lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes (10B and 11B) compared to those with the natural distribution of boron (20 at% 10B and 80 at% 11B). On the one hand, as with standard semiconductors, both the phonon energy and electronic bandgap varied with the boron isotope mass, the latter due to the quantum effect of zero-point renormalization. On the other hand, temperature-dependent experiments focusing on the shear and breathing motions of adjacent layers revealed the specificity of isotope engineering in a layered material, with a modification of the van der Waals interactions upon isotope purification. The electron density distribution is more diffuse between adjacent layers in 10BN than in 11BN crystals. Our results open perspectives in understanding and controlling van der Waals bonding in layered materials.

  3. Boron effect on fabrication properties and service behaviour of complex corrosion-resistant steels

    International Nuclear Information System (INIS)

    Gol'dshtejn, Ya.E.; Piskunova, A.I.; Shmatko, M.N.

    1978-01-01

    In order to determine the optimum boron admixtures for the improvement of the technological plasticity without the considerable reduction in the corrosion resistance of the complex alloy Cr-Ni-Mo steels, industrial heats of the 03KH16N15M3, 03KH17N14M3 and other steels, containing 0.0005-0.003% boron, have been researched. The plasticity, corrosion resistance and microstructure of certain steels have been determined. It is shown that small additions of boron enhance the technological plasticity during the ingot rolling. In order to prevent a sharp reduction in the corrosion resistance, the boron content should be confined to 0.0015% and the quenching temperature raised to 1,120-1,150 deg C. The positive effect of the quenching temperature increase is accounted for by the solution of the excess phases and by the reduction of the dislocation density in the near-the-boundary zones

  4. Spectral emissivity measurements of candidate materials for very high temperature reactors

    Energy Technology Data Exchange (ETDEWEB)

    Cao, G.; Weber, S.J.; Martin, S.O.; Anderson, M.H. [Department of Engineering Physics, University of Wisconsin, 1500 Engineering Drive, Madison, WI (United States); Sridharan, K., E-mail: kumars@cae.wisc.edu [Department of Engineering Physics, University of Wisconsin, 1500 Engineering Drive, Madison, WI (United States); Allen, T.R. [Department of Engineering Physics, University of Wisconsin, 1500 Engineering Drive, Madison, WI (United States)

    2012-10-15

    Heat dissipation by radiation is an important consideration in VHTR components, particularly the reactor pressure vessel (RPV), because of the fourth power temperature dependence of radiated heat. Since emissivity is the material property that dictates the ability to radiate heat, measurements of emissivities of materials that are being specifically considered for the construction of VHTR become important. Emissivity is a surface phenomenon and therefore compositional, structural, and topographical changes that occur at the surfaces of these materials as a result of their interactions with the environment at high temperatures will alter their emissivities. With this background, an experimental system for the measurement of spectral emissivity has been designed and constructed. The system has been calibrated in conformance with U.S. DoE quality assurance standards using inert ceramic materials, boron nitride, silicon carbide, and aluminum oxide. The results of high temperature emissivity measurements of potential VHTR materials such as ferritic steels SA 508, T22, T91 and austenitic alloys IN 800H, Haynes 230, IN 617, and 316 stainless steel have been presented.

  5. Mechanically activated self-propagated high-temperature synthesis of nanometer-structured MgB2

    International Nuclear Information System (INIS)

    Radev, D.D.; Marinov, M.; Tumbalev, V.; Radev, I.; Konstantinov, L.

    2005-01-01

    Nanometer-sized MgB 2 was prepared via a two-step modification of the mechanically activated self-propagated high-temperature synthesis. The experimental conditions and some structural and phase characteristics of the synthesized product are reported. It is shown that a single-phase material can be prepared after 2 h of intense mechanical treatment of the starting magnesium and boron powders and a synthesis induced at a current-pulse density of 30 A cm -2 . The average size of MgB 2 particles synthesized in this way is 70-80 nm. It is also shown that using the same reagents and the 'classic' high-temperature interaction at 850 deg C with a protective atmosphere of pure Ar, mean particle size of the MgB 2 obtained is 50 μm

  6. Problems and possibilities of development of boron nitride ceramics

    International Nuclear Information System (INIS)

    Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

    1988-01-01

    The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

  7. Boron carbide-carbon composites and composites for cryogenic applications

    International Nuclear Information System (INIS)

    Sheinberg, H.

    1979-01-01

    Because of its neutronic properties, high hardness, and high melting temperature, boron carbide (B 4 C) is widely used at the Los Alamos Scientific Laboratory. However because of its hardness and mode of manufacture, it is expensive to machine finish to tight dimensional specifictions. For some neutronic applications, a density considerably below the theoretical 2.52 Mg/m 3 was acceptable, and this relaxation in density specification permitted addition of carbon as a second phase to reduce machining costs. We conducted an experimental program to prepare 50.8-mm-diam by 34.8-mm-thick cylinders of B 4 C and B 4 C-C composites with concentrations of carbon varying from 5.5 to 30 volume percent. Additionally we used three forms of carbon, natural flake graphite, synthetic graphite flour, and a fine furnace black as the source of the second phase. We determined the sound velocity, compressive strength, coefficient of thermal expansion, electrical resistivity, and microstructure as functions of composition. Additionally, an enriched boron ( 10 B)-carbon composite was studied as an alternate material

  8. Tumor cell killing effect of boronated dipeptide. Boromethylglycylphenylalanine on boron neutron capture therapy for malignant brain tumors

    International Nuclear Information System (INIS)

    Takagaki, Masao; Ono, Koji; Masunaga, Shinichiro; Kinashi, Yuko; Kobayashi, Toru; Oda, Yoshifumi; Kikuchi, Haruhiko; Spielvogel, B.F.

    1994-01-01

    The killing effect of Boron Neutron Capture Therapy; BNCT, is dependant on the boron concentration ratio of tumor to normal brain (T/N ratio), and also that of tumor to blood (T/B ratio). The clinical boron carrier of boro-captate (BSH) showed the large T/N ratio of ca. 8, however the T/B ratio was around 1, which indicated nonselective accumulation into tumor. Indeed high boron concentration of blood restrict the neutron irradiation dose in order to circumvent the normal endothelial damage, especially in the case of deeply seated tumor. Phenylalanine analogue of para borono-phenylalanine (BPA) is an effective boron carrier on BNCT for malignant melanoma. For the BNCT on brain tumors, however, BPA concentration in normal brain was reported to be intolerably high. In order to improve the T/N ratio of BPA in brain, therefore, a dipeptide of boromethylglycylphenylalanine (BMGP) was synthesized deriving from trimethylglycine conjugated with BPA. It is expected to be selectively accumulated into tumor with little uptake into normal brain. Because a dipeptide might not pass through the normal blood brain barrier (BBB). Its killing effect on cultured glioma cell, T98G, and its distribution in rat brain bearing 9L glioma have been investigated in this paper. The BNCT effect of BMGP on cultured cells was nearly triple in comparison with DL-BPA. The neutron dose yielding 1% survival ratio were 7x10 12 nvt for BMGP and 2x10 13 nvt for BPA respectively on BNCT after boron loading for 16 hrs in the same B-10 concentration of 20ppm. Quantitative study of boron concentration via the α-auto radiography and the prompt gamma ray assay on 9L brain tumor rats revealed that T/N ratio and T/B ratio are 12.0 and 3.0 respectively. Those values are excellent for BNCT use. (author)

  9. Aspects of the chemistry of boron

    International Nuclear Information System (INIS)

    Moellinger, H.

    1976-01-01

    Crystal phases of elementary boron are reviewed as well as boron-sulphur, boron-selenum, boron-tellurium, and boron-nitrogen compounds, carboranes, and boron-carbohydrate complexes. A boron cadastre of rivers and lakes serves to illustrate the role of boron in environmental protection. Technically relevant boron compounds and their uses are mentioned. (orig.) 891 HK/orig. 892 MB [de

  10. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Kester, D.J.

    1991-01-01

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  11. Surface modification of EN-C35E steels by thermo-chemical boronizing process and its properties

    International Nuclear Information System (INIS)

    Yapar, U.; Arisoy, C.F.; Basman, G.; Yesilcubuk, S.A.; Sesen, M.K.

    2004-01-01

    Boronizing, which involves diffusion of boron atoms into steel substrate to form hard iron borides is well known diffusion coating technique. In this study, salt bath boronizing processes were performed on EN-C35E steel substrate in slurry salt bath containing borax, boric acid as boron sources and ferro-silicon as reductant. The process was performed at 850 and 950 C for 2, 4, 6 and 8 hours. Boride layers were examined by optical microscope (OM), scanning electron microscope (SEM) and X-ray diffraction (XRD). Hardness of borides formed on the steel substrate was measured by knoop indenter under load of 0.5N. Metallographic studies and XRD analysis revealed that single-type Fe 2 B layers were formed. Depending on boronizing time and temperature, it has found that the hardness of boride layer ranged from 1895-2143 HK 0.05 that is nearly 8 times higher than substrate hardness. The thickness of the layer ranged from 25 to 167 μm depending on boronizing time and temperature. (orig.)

  12. Synthesis, characterization and thermoelectric properties of metal borides, boron carbides and carbaborides; Synthese, Charakterisierung und thermoelektrische Eigenschaften ausgewaehlter Metallboride, Borcarbide und Carbaboride

    Energy Technology Data Exchange (ETDEWEB)

    Guersoy, Murat

    2015-07-06

    This work reports on the solid state synthesis and structural and thermoelectrical characterization of hexaborides (CaB{sub 6}, SrB{sub 6}, BaB{sub 6}, EuB{sub 6}), diboride dicarbides (CeB{sub 2}C{sub 2}, LaB{sub 2}C{sub 2}), a carbaboride (NaB{sub 5}C) and composites of boron carbide. The characterization was performed by X-ray diffraction methods and Rietveld refinements based on structure models from literature. Most of the compounds were densified by spark plasma sintering at 100 MPa. As high-temperature thermoelectric properties the Seebeck coefficients, electrical conductivities, thermal diffusivities and heat capacities were measured between room temperature and 1073 K. ZT values as high as 0.5 at 1273 K were obtained for n-type conducting EuB{sub 6}. High-temperature X-ray diffraction also confirmed its thermal stability. The solid solutions Ca{sub x}Sr{sub 1-x}B{sub 6}, Ca{sub x}Ba{sub 1-x}B{sub 6} and Sr{sub x}Ba{sub 1-x}B{sub 6} (x = 0, 0.25, 0.5, 0.75, 1) are also n-type but did not show better ZT values for the ternary compounds compared to the binaries, but for CaB{sub 6} the values of the figure of merit (ca. 0.3 at 1073 K) were significantly increased (ca. 50 %) compared to earlier investigations which is attributed to the densification process. Sodium carbaboride, NaB{sub 5}C, was found to be the first p-type thermoelectric material that crystallizes with the hexaboride-structure type. Seebeck coefficients of ca. 80 μV . K{sup -1} were obtained. Cerium diboride dicarbide, CeB{sub 2}C{sub 2}, and lanthanum diboride dicarbide, LaB{sub 2}C{sub 2}, are metallic. Both compounds were used as model compounds to develop compacting strategies for such layered borides. Densities obtained at 50 MPa were determined to be higher than 90 %. A new synthesis route using single source precursors that contain boron and carbon was developed to open the access to new metal-doped boron carbides. It was possible to obtain boron carbide, but metal-doping could not be

  13. Evaluation of Aluminum-Boron Carbide Neutron Absorbing Materials for Interim Storage of Used Nuclear Fuel

    International Nuclear Information System (INIS)

    Wang, Lumin; Wierschke, Jonathan Brett

    2015-01-01

    The objective of this work was to understand the corrosion behavior of Boral® and Bortec® neutron absorbers over long-term deployment in a used nuclear fuel dry cask storage environment. Corrosion effects were accelerated by flowing humidified argon through an autoclave at temperatures up to 570°C. Test results show little corrosion of the aluminum matrix but that boron is leaching out of the samples. Initial tests performed at 400 and 570°C were hampered by reduced flow caused by the rapid build-up of solid deposits in the outlet lines. Analysis of the deposits by XRD shows that the deposits are comprised of boron trioxide and sassolite (H 3 BO 3 ). The collection of boron- containing compounds in the outlet lines indicated that boron was being released from the samples. Observation of the exposed samples using SEM and optical microscopy show the growth of new phases in the samples. These phases were most prominent in Bortec® samples exposed at 570°C. Samples of Boral® exposed at 570°C showed minimal new phase formation but showed nearly the complete loss of boron carbide particles. Boron carbide loss was also significant in Boral samples at 400°C. However, at 400°C phases similar to those found in Bortec® were observed. The rapid loss of the boron carbide particles in the Boral® is suspected to inhibit the formation of the new secondary phases. However, Material samples in an actual dry cask environment would be exposed to temperatures closer to 300°C and less water than the lowest test. The results from this study conclude that at the temperature and humidity levels present in a dry cask environment, corrosion and boron leaching will have no effect on the performance of Boral® and Bortec® to maintain criticality control.

  14. Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

    International Nuclear Information System (INIS)

    Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

    1989-01-01

    When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

  15. Boron- and salt-tolerant trees and shrubs for northern Nevada

    Science.gov (United States)

    Heidi Kratsch

    2012-01-01

    Boron is a mineral that, in small quantities, is essential for plant growth and development , but becomes toxic at levels above 0.5 to 1 part per million (ppm) in the soil. Excess boron may be naturally present in the soil, and it can accumulate by irrigating with water high in boron. Boron occurs naturally in arid soils originating from geologically young deposits. It...

  16. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

    Science.gov (United States)

    Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

    2015-07-28

    Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

  17. Neutron absorbing room temperature vulcanizable silicone rubber compositions

    International Nuclear Information System (INIS)

    Zoch, H.L.

    1979-01-01

    A neutron absorbing composition is described and consists of a one-component room temperature vulcanizable silicone rubber composition or a two-component room temperature vulcanizable silicone rubber composition in which the composition contains from 25 to 300 parts by weight based on the base silanol or vinyl containing diorganopolysiloxane polymer of a boron compound or boron powder as the neutron absorbing ingredient. An especially useful boron compound in this application is boron carbide. 20 claims

  18. High temperature dissolution of ferrites, chromites and bonaccordite in chelating media

    Energy Technology Data Exchange (ETDEWEB)

    Sathyaseelan, V.S.; Subramanian, H.; Anupkumar, B.; Rufus, A.L.; Velmurugan, S.; Narasimhan, S.V., E-mail: snv@igcar.gov.in [BARC Facilities, Water and Steam Chemistry Div., Tamilnadu (India)

    2010-07-01

    Different methods have been employed world wide for the decontamination of reactor coolant system surfaces. The success of a decontamination process mainly depends on the oxide dissolution efficiency of the decontamination formulation. Among the oxides, Fe{sub 3}O{sub 4} undergoes easy dissolution in organic acid media at normal temperatures. However, dissolution of chromites and mixed ferrites is not that easy in organic chelant media at normal temperatures even in the presence of redox reagents. Hence, a high temperature process was attempted for the dissolution of ferrites and chromites. A re-circulation system consisting of an autoclave, pump, heat exchanger etc. all lined with teflon was used for carrying out high temperature dissolution experiments. This study describes the high temperature dissolution kinetics of Fe{sub 3}O{sub 4}, NiFe{sub 2}O{sub 4}, and Cr{sub 2}O{sub 3}. Nitrilotriacetic acid (NTA), a well known solvent for metal oxides, was applied at temperatures ranging from 80 to 180{sup o}C. About six fold increase in dissolution rate was observed for Fe{sub 3}O{sub 4} in this temperature range. Effect of N{sub 2}H{sub 4} on oxide dissolution was studied. Lower dissolution rates were observed for Fe{sub 3}O{sub 4} and NiFe{sub 2}O{sub 4} in the presence of hydrazine. Oxide dissolution efficiency of other chelating agents like EDTA, PDCA etc. and the effect of reducing agents like oxalic acid and ascorbic acid on high temperature dissolution also has been studied. The effect of incorporation of boron and zinc in the iron and chromium oxides has also been studied. Bonaccordite (Ni{sub 2}FeBO{sub 5}) has been observed in the fuel deposits of pressurized Water Reactors especially in the AOA affected plants. Zinc ferrite/chromite are formed in reactors adopting zinc injection passivation technique to control radiation field. Bonaccordite and zinc ferrite/chromite formed over the reactor coolant system structural materials are also difficult to dissolve

  19. Effect of Boron on the Hot Ductility of Resulfurized Low-Carbon Free-Cutting Steel

    Science.gov (United States)

    Liu, Hai-tao; Chen, Wei-qing

    2015-09-01

    The hot ductility of resulfurized low-carbon free-cutting steel with boron additives is studied in the temperature range 850 - 1200°C with the help of a Gleeble-1500 thermomechanical simulator. The introduction of boron increases hot ductility, especially at 900 - 1050°C. In the single-phase austenitic region, this effect is caused by segregation of boron over grain boundaries, acceleration of dynamic recrystallization, and solid-solution softening of deformed austenite.

  20. Effects of deformation and boron on microstructure and continuous cooling transformation in low carbon HSLA steels

    Energy Technology Data Exchange (ETDEWEB)

    Jun, H.J. [Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Kang, J.S. [Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Seo, D.H. [Technical Research Laboratories, POSCO, Pohang 545-090 (Korea, Republic of); Kang, K.B. [Technical Research Laboratories, POSCO, Pohang 545-090 (Korea, Republic of); Park, C.G. [Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)]. E-mail: cgpark@postech.ac.kr

    2006-04-25

    The continuous-cooling-transformation (CCT) diagram and continuous cooled microstructure were investigated for low carbon (0.05 wt.% C) high strength low alloy steels with/without boron. Microstructures observed in continuous cooled specimens were composed of pearlite, quasi-polygonal ferrite, granular bainite, acicular ferrite, bainitic ferrite, lower bainite, and martensite depending on cooling rate and transformation temperature. A rapid cooling rate depressed the formation of pearlite and quasi-polygonal ferrite, which resulted in higher hardness. However, hot deformation slightly increased transformation start temperature, and promoted the formation of pearlite and quasi-polygonal ferrite. Hot deformation also strongly promoted the acicular ferrite formation which did not form under non-deformation conditions. Small boron addition effectively reduced the formation of pearlite and quasi-polygonal ferrite and broadened the cooling rate region for bainitic ferrite and martensite.

  1. Density separation of boron particles. Final report

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-04-01

    A density distribution much broader than expected was observed in lots of natural boron powder supplied by two different sources. The material in both lots was found to have a rhombohedral crystal structure, and the only other parameters which seemed to account for such a distribution were impurities within the crystal structure and varying isotopic ratios. A separation technique was established to isolate boron particles in narrow densty ranges. The isolated fractions were subsequently analyzed for B 10 and total boron content in an effort to determine whether selective isotopic enrichment and nonhomogeneous impurity distribution were the causes for the broad density distribution of the boron powders. It was found that although the B 10 content remained nearly constant around 18%, the total boron content varied from 37.5 to 98.7%. One of the lots also was found to contain an apparently high level of alpha rhombohedral boron which broadened the density distribution considerably. During this work, a capability for removing boron particles containing gross amounts of impurities and, thereby, improving the overall purity of the remaining material was developed. In addition, the separation technique used in this study apparently isolated particles with alpha and beta rhombohedral crystal structures, although the only supporting evidence is density data

  2. Radiation hardening of MOS devices by boron

    International Nuclear Information System (INIS)

    Danchenko, V.

    1975-01-01

    A novel technique is disclosed for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device of the type having a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. In the preferred embodiment, the novel inventive technique contemplates the introduction of boron into the insulating oxide, the boron being introduced within a layer of the oxide of about 100A to 300A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 atoms/ cm 3 . The novel technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations, which accumulations, if not eliminated, would cause shifting of the gate threshold potential of a radiation subjected MOS device, and thus render the device unstable and/or inoperative. (auth)

  3. A technique to prepare boronated B72.3 monoclonal antibody for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Ranadive, G.N.; Rosenzweig, H.S.; Epperly, M.W.

    1993-01-01

    B72.3 monoclonal antibody has been successfully boronated using mercaptoundecahydro-closo-dodecaborate (boron cage compound). The reagent was incorporated by first reacting the lysine residues of the antibody with m-maleimidobenzoyl succinimide ester (MBS), followed by Michael addition to the maleimido group by the mercapto boron cage compound to form a physiologically stable thioether linkage. Boron content of the antibody was determined by atomic absorption spectroscopy. For biodistribution studies, boronated antibody was radioiodinated with iodogen. 125 I-labeled and boronated B72.3 monoclonal antibody demonstrated clear tumor localization when administered via tail vein injections to athymic nude mice bearing LS174-T tumor xenografts. Boronated antibody was calculated to deliver 10 6 boron atoms per tumor cell. Although this falls short of the specific boron content originally proposed as necessary for boron neutron capture therapy (BNCT), recent calculations suggest that far fewer atoms of 10 B per tumor cell would be necessary to effect successful BNCT when the boron is targeted to the tumor cell membrane. (author)

  4. Origin of high ammonium, arsenic and boron concentrations in the proximity of a mine: Natural vs. anthropogenic processes.

    Science.gov (United States)

    Scheiber, Laura; Ayora, Carlos; Vázquez-Suñé, Enric; Cendón, Dioni I; Soler, Albert; Baquero, Juan Carlos

    2016-01-15

    High ammonium (NH4), arsenic (As) and boron (B) concentrations are found in aquifers worldwide and are often related to human activities. However, natural processes can also lead to groundwater quality problems. High NH4, As and B concentrations have been identified in the confined, deep portion of the Niebla-Posadas aquifer, which is near the Cobre Las Cruces (CLC) mining complex. The mine has implemented a Drainage and Reinjection System comprising two rings of wells around the open pit mine, were the internal ring drains and the external ring is used for water reinjection into the aquifer. Differentiating geogenic and anthropogenic sources and processes is therefore crucial to ensuring good management of groundwater in this sensitive area where groundwater is extensively used for agriculture, industry, mining and human supply. No NH4, As and B are found in the recharge area, but their concentrations increase with depth, salinity and residence time of water in the aquifer. The increased salinity down-flow is interpreted as the result of natural mixing between infiltrated meteoric water and the remains of connate waters (up to 8%) trapped within the pores. Ammonium and boron are interpreted as the result of marine solid organic matter degradation by the sulfate dissolved in the recharge water. The light δ(15)NNH4 values confirm that its origin is linked to marine organic matter. High arsenic concentrations in groundwater are interpreted as being derived from reductive dissolution of As-bearing goethite by dissolved organic matter. The lack of correlation between dissolved Fe and As is explained by the massive precipitation of siderite, which is abundantly found in the mineralization. Therefore, the presence of high arsenic, ammonium and boron concentrations is attributed to natural processes. Ammonium, arsenic, boron and salinity define three zones of groundwater quality: the first zone is close to the recharge area and contains water of sufficient quality for

  5. Boron-rich oligomers for BNCT

    International Nuclear Information System (INIS)

    Gula, M.; Perleberg, O.; Gabel, D.

    2000-01-01

    The synthesis of two BSH derivatives is described, which can be used for oligomerization in DNA-synthesizers. Synthesis pathways lead to final products in five and six steps, respectively. Because of chirality interesting results were expected. NMR-measurements confirm this expectation. Possible oligomers with high concentrations of boron can be attached to biomolecules. These oligomers can be explored with several imaging methods (EELS, PEM) to determine the lower detection limit of boron with these methods. (author)

  6. Chamber with punches made from polycrystal cubic boron nitrides for Moessbauer study at high hydrostatic pressure

    International Nuclear Information System (INIS)

    Kapitanov, E.V.; Yakovlev, E.N.

    1978-01-01

    The design of a high hydrostatic pressure chamber with polycrystallic boron nitride dies weakly absorbing gamma radiation with energies of more than 14 keV is described. The use of this material permits to investigate single- and polycrystal bodies using the Moessbauer effect when the geometry of the experiment remains unchanged and the hydrostatic pressure is up to 70 kbar. The basic units of the chamber are a teflon capsule placed in a container made of a pressed boron and epoxide resin mixture, electric inputs and a die of polycrystal cubic boron nitride. The pressure is transferred to the sample tested through a liquid (petrol or the 4 to 1 mixture of methanole and ethanole) which does not become solid at a pressure below 37 kbar. Basic dimensions of the chamber are given and the dependence of the pressure in the capsule on the force applied to the chamber is also presented

  7. Boron geochemistry from some typical Tibetan hydrothermal systems: Origin and isotopic fractionation

    International Nuclear Information System (INIS)

    Zhang, Wenjie; Tan, Hongbing; Zhang, Yanfei; Wei, Haizhen; Dong, Tao

    2015-01-01

    The Tibetan plateau is characterized by intense hydrothermal activity and abnormal enrichment of trace elements in geothermal waters. Hydrochemistry and B isotope samples from geothermal waters in Tibet were systematically measured to describe the fractionation mechanisms and provide constraints on potential B reservoirs. B concentrations range from 0.35 to 171.90 mg/L, and isotopic values vary between −16.57 ‰ and +0.52 ‰. Geothermal fields along the Indus-Yarlung Zangbo suture zone and N–S rifts are observed with high B concentrations and temperatures. The similar hydrochemical compositions of high-B geothermal waters with magmatic fluid and consistent modeling of B isotopic compositions with present δ"1"1B values imply that the B in high-B geothermal waters is mainly contributed by magmatic sources, probably through magma degassing. In contrast, geothermal fields in other regions of the Lhasa block have relatively low B concentrations and temperatures. After considering the small fractionation factor and representative indicators of Na/Ca, Cl/HCO_3, Na + K and Si, the conformity between modeling results and the isotopic compositions of host rocks suggests that the B in low-temperature geothermal fields is mainly sourced from host rocks. According to simulated results, the B in some shallow geothermal waters not only originated from mixing of cold groundwater with deep thermal waters, but it was also contributed by equilibration with marine sedimentary rocks with an estimated proportion of 10%. It was anticipated that this study would provide useful insight into the sources and fractionation of B as well as further understanding of the relationships between B-rich salt lakes and geothermal activities in the Tibetan plateau. - Highlights: • Chemical and boron isotopic data of geothermal waters in Tibetan plateau were introduced. • Unusual enrichment of boron in Tibetan geothermal waters is related to magmatic and host rocks. • Boron

  8. Boron removal in radioactive liquid waste by forward osmosis membrane

    Energy Technology Data Exchange (ETDEWEB)

    Doo Seong Hwang; Hei Min Choi; Kune Woo Lee; Jei Kwon Moon [KAERI, Daejeon (Korea, Republic of)

    2013-07-01

    This study investigated the treatment of boric acid contained in liquid radioactive waste using a forward osmosis membrane. The boron permeation through the membrane depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7 and increases with an increase of the osmotic driving force. The boron flux decreases slightly with the salt concentration, but is not heavily influenced by a low salt concentration. The boron flux increases linearly with the concentration of boron. No element except for boron was permeated through the FO membrane in the multi-component system. The maximum boron flux is obtained in an active layer facing a draw solution orientation of the CTA-ES membrane under conditions of less than pH 7 and high osmotic pressure. (authors)

  9. Structural and mechanical characterization of boron doped biphasic calcium phosphate produced by wet chemical method and subsequent thermal treatment

    Energy Technology Data Exchange (ETDEWEB)

    Albayrak, Onder, E-mail: albayrakonder@mersin.edu.tr

    2016-03-15

    In the current study, boron doped biphasic calcium phosphate bioceramics consisting of a mixture of boron doped hydroxyapatite (BHA) and beta tricalcium phosphate (β-TCP) of varying BHA/β-TCP ratios were obtained after sintering stage. The effects of varying boron contents and different sintering temperatures on the BHA/β-TCP ratios and on the sinterability of the final products were investigated. Particle sizes and morphologies of the obtained precipitates were determined using SEM. XRD and FTIR investigation were conducted to detect the boron formation in the structure of HA and quantitative analysis was performed to determine the BHA/β-TCP ratio before and after sintering stage. In order to determine the sinterability of the obtained powders, pellets were prepared and sintered; the rates of densification were calculated and obtained results were correlated by SEM images. Also Vickers microhardness values of the sintered samples were determined. The experimental results verified that boron doped hydroxyapatite powders were obtained after sintering stage and the structure consists of a mixture of BHA and β-TCP. As the boron content used in the precipitation stage increases, β-TCP content of the BHA/β-TCP ratio increases but sinterability, density and microhardness deteriorate. As the sintering temperature increases, β-TCP content, density and microhardness of the samples increase and sinterability improves. - Highlights: • This is the first paper about boron doped biphasic calcium phosphate bioceramics. • Boron doping affects the structural and mechanical properties. • BHA/β-TCP ratio can be adjustable with boron content and sintering temperature.

  10. A new cell for high temperature EXAFS measurements in molten rare earth fluorides

    International Nuclear Information System (INIS)

    Rollet, Anne-Laure; Bessada, Catherine; Auger, Yannick; Melin, Philippe; Gailhanou, Marc; Thiaudiere, Dominique

    2004-01-01

    A new cell with simple design has been developed for high temperature X-rays absorption measurements in both solid and molten lanthanide fluorides. Two plates of pyrolitic boron nitride are fixed hermetically together around the samples in order to avoid any evaporation and atmosphere interaction. EXAFS spectra of molten mixtures of LiF-LaF 3 measured at the La L III absorption edge are reported up to 900 deg C, and show the ability of this cell to keep the salt and to perform long time acquisition improving the signal to noise ratio

  11. Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies

    Science.gov (United States)

    Boukhvalov, D. W.; Zhidkov, I. S.; Kukharenko, A. I.; Slesarev, A. I.; Zatsepin, A. F.; Cholakh, S. O.; Kurmaev, E. Z.

    2018-05-01

    Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically favorable and creation of the vacancies that can induce the oxidation of copper substrate is energetically unfavorable. In the case of non-graphitic boron defects oxidation of the area, a nearby impurity is metastable that not only prevent oxidation but makes boron-doped graphene. Modeling of oxygen reduction reaction demonstrates high catalytic performance of these materials.

  12. Determination of boron in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grazhulene, S.S.; Grossman, O.V.; Kuntscher, K.K.; Malygina, L.I.; Muller, E.N.; Telegin, G.F.

    1985-10-01

    In the determination of boron in amorphous alloys containingFe, Co, B, Si, Ni, and P having unusal magnetic and electrical properties, precise analysis and rapid analysis are necessary. To improve the metrological properties of the existing procedure, to find a rapid determination of boron in amorphous alloys, and to verify the accuracy of the results, in the present work the optimization of the photometric determination after extraction of the BF/sup -//sub 4/ ion pair with methylene blue has been studied, and a boron determination by flame photometry using selective methylation has been developed. The determination of boron by the flame photometric and spectrophotometric methods is shown. When a highly precise determination is needed, the spectrophotometric procedure can be used. This procedure is distinguished by its labor intensity and duration. When the need for reproducibility is less severe, the rapid flame photometric procedure is best.

  13. Density functional theory investigation of oxygen interaction with boron-doped graphite

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Juan; Wang, Chen [State Key Lab of New Ceramic and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Liang, Tongxiang, E-mail: txliang@tsinghua.edu.cn [State Key Lab of New Ceramic and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Lai, Wensheng [Advanced Material Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing, 100084 (China)

    2016-12-30

    Highlights: • Density-functional approach is applied to study the interaction of oxygen with boron-doped graphite. • Adsorption and diffusion of oxygen atoms on boron doped graphite surfaces are studied. • Recombination of oxygen is investigated by ER and LH mechanisms. • Low boron concentration facilitates O{sub 2} formation while high boron loading inhibits the recombination. • The presence of B−B bonds due to boron accumulation makes it impossible for oxygen recombination. - Abstract: Boron inserted as impurity by substitution of carbon atoms in graphite is known to change (improve or deteriorate) oxidation resistance of nuclear graphite, but the reason for both catalytic and inhibiting oxidation is still uncertain. As a first step, this work is more specially devoted to the adsorption and diffusion of oxygen atoms on the surface and related to the problem of oxygen retention on the pure and boron-containing graphite surfaces. Adsorption energies and energy barriers associated to the diffusion for molecular oxygen recombination are calculated in the density functional theory framework. The existence of boron modifies the electronic structure of the surface, which results in an increase of the adsorption energy for O. However, low boron loading makes it easier for the recombination into molecular oxygen. For high boron concentration, it induces a better O retention capability in graphite because the presence of B-B bonds decreases recombination of the adsorbed oxygen atoms. A possible explanation for both catalytic and inhibiting effects of boron in graphite is proposed.

  14. Elemental segregation during resistance spot welding of boron containing advanced high strength steels

    NARCIS (Netherlands)

    Amirthalingam, M.; Van der Aa, E.M.; Kwakernaak, C.; Hermans, M.J.M.; Richardson, I.M.

    2015-01-01

    The partitioning behaviour of carbon, phosphorous and boron during the solidification of a resistance spot weld pool was studied using experimental simulations and a phase field model. Steels with varying carbon, phosphorous and boron contents were designed and subjected to a range of resistant spot

  15. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

    Directory of Open Access Journals (Sweden)

    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  16. Evolution of magnetism by rolling up hexagonal boron nitride nanosheets tailored with superparamagnetic nanoparticles.

    Science.gov (United States)

    Hwang, Da Young; Choi, Kyoung Hwan; Park, Jeong Eon; Suh, Dong Hack

    2017-02-01

    Controlling tunable properties by rolling up two dimensional nanomaterials is an exciting avenue for tailoring the electronic and magnetic properties of materials at the nanoscale. We demonstrate the tailoring of a magnetic nanocomposite through hybridization with magnetic nanomaterials using hexagonal boron nitride (h-BN) templates as an effective way to evolve magnetism for the first time. Boron nitride nanosheets exhibited their typical diamagnetism, but rolled-up boron nitride sheets (called nanoscrolls) clearly have para-magnetism in the case of magnetic susceptibility. Additionally, the Fe 3 O 4 NP sample shows a maximum ZFC curve at about 103 K, which indicates well dispersed superparamagnetic nanoparticles. The ZFC curve for the h-BN-Fe 3 O 4 NP scrolls exhibited an apparent rounded maximum blocking temperature at 192 K compared to the Fe 3 O 4 NPs, leading to a dramatic increase in T B . These magnetic nanoscroll derivatives are remarkable materials and should be suitable for high-performance composites and nano-, medical- and electromechanical-devices.

  17. Boron toxicity causes multiple effects on Malus domestica pollen tube growth

    Directory of Open Access Journals (Sweden)

    Kefeng eFang

    2016-02-01

    Full Text Available Boron is an essential micronutrient for plants. However, boron is also toxic to cells at high concentrations, although the mechanism of this stress is not known. This study aimed to evaluate the effect of boron stress on Malus domestica pollen tube growth and its possible regulatory pathway. Our results show that a high concentration of boron inhibited pollen germination and tube growth and led to the morphological abnormality of pollen tubes. Fluorescent labeling coupled with a scanning ion-selective electrode technique detected that boron stress could decrease [Ca2+]c and induce the disappearance of the [Ca2+]c gradient, which are critical for pollen tube polar growth. Actin filaments were therefore altered by boron stress. Immuno-localization and fluorescence labeling, together with Fourier-transform infrared analysis (FTIR, suggested that boron stress influenced the accumulation and distribution of callose, de-esterified pectins, esterified pectins and arabinogalactan proteins in pollen tubes. All of the above results provide new insights into the regulatory role of boron in pollen tube development. In summary, boron likely plays a structural and regulatory role in relation to [Ca2+]c, actin cytoskeleton and cell wall components and thus regulates Malus domestica pollen germination and tube polar growth.

  18. Boron Toxicity Causes Multiple Effects on Malus domestica Pollen Tube Growth.

    Science.gov (United States)

    Fang, Kefeng; Zhang, Weiwei; Xing, Yu; Zhang, Qing; Yang, Liu; Cao, Qingqin; Qin, Ling

    2016-01-01

    Boron is an important micronutrient for plants. However, boron is also toxic to cells at high concentrations, although the mechanism of this toxicity is not known. This study aimed to evaluate the effect of boron toxicity on Malus domestica pollen tube growth and its possible regulatory pathway. Our results showed that a high concentration of boron inhibited pollen germination and tube growth and led to the morphological abnormality of pollen tubes. Fluorescent labeling coupled with a scanning ion-selective electrode technique detected that boron toxicity could decrease [Ca(2+)]c and induce the disappearance of the [Ca(2+)]c gradient, which are critical for pollen tube polar growth. Actin filaments were therefore altered by boron toxicity. Immuno-localization and fluorescence labeling, together with fourier-transform infrared analysis, suggested that boron toxicity influenced the accumulation and distribution of callose, de-esterified pectins, esterified pectins, and arabinogalactan proteins in pollen tubes. All of the above results provide new insights into the regulatory role of boron in pollen tube development. In summary, boron likely plays a structural and regulatory role in relation to [Ca(2+)]c, actin cytoskeleton and cell wall components and thus regulates Malus domestica pollen germination and tube polar growth.

  19. Molecular Chemistry and Engineering of Boron-Modified Polyorganosilazanes as New Processable and Functional SiBCN Precursors.

    Science.gov (United States)

    Viard, Antoine; Fonblanc, Diane; Schmidt, Marion; Lale, Abhijeet; Salameh, Chrystelle; Soleilhavoup, Anne; Wynn, Mélanie; Champagne, Philippe; Cerneaux, Sophie; Babonneau, Florence; Chollon, Georges; Rossignol, Fabrice; Gervais, Christel; Bernard, Samuel

    2017-07-06

    A series of boron-modified polyorganosilazanes was synthesized from a poly(vinylmethyl-co-methyl)silazane and controlled amounts of borane dimethyl sulfide. The role of the chemistry behind their synthesis has been studied in detail by using solid-state NMR spectroscopy, FTIR spectroscopy, and elemental analysis. The intimate relationship between the chemistry and the processability of these polymers is discussed. Polymers with low boron contents displayed appropriate requirements for facile processing in solution, such as impregnation of host carbon materials, which resulted in the design of mesoporous monoliths with a high specific surface area after pyrolysis. Polymers with high boron content are more appropriate for solid-state processing to design mechanically robust monolith-type macroporous and dense structures after pyrolysis. Boron acts as a crosslinking element, which offers the possibility to extend the processability of polyorganosilazanes and suppress the distillation of oligomeric fragments in the low-temperature region of their thermal decomposition (i.e., pyrolysis) at 1000 °C under nitrogen. Polymers with controlled and high ceramic yields were generated. We provide a comprehensive mechanistic study of the two-step thermal decomposition based on a combination of thermogravimetric experiments coupled with elemental analysis, solid-state NMR spectroscopy, and FTIR spectroscopy. Selected characterization tools allowed the investigation of specific properties of the monolith-type SiBCN materials. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

    KAUST Repository

    Li, Xiaohang; Wang, Shuo; Liu, Hanxiao; Ponce, Fernando A.; Detchprohm, Theeradetch; Dupuis, Russell D.

    2017-01-01

    Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

  1. 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

    KAUST Repository

    Li, Xiaohang

    2017-01-11

    Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

  2. Boron Removal in Seawater Reverse Osmosis System

    KAUST Repository

    Rahmawati, Karina

    2011-07-01

    Reverse osmosis successfully proves to remove more than 99% of solute in seawater, providing fresh water supply with satisfied quality. Due to some operational constraints, however, some trace contaminants removal, such as boron, cannot be achieved in one pass system. The stringent criterion for boron from World Health Organization (WHO) and Saudi Arabia local standard (0.5 mg/l) is hardly fulfilled by single pass sea water reverse osmosis (SWRO) plants. Some design processes have been proposed to deal with boron removal, but they are not economically efficient due to high energy and chemical consumption. The objective of this study was to study boron removal by different reverse osmosis membranes in two pH conditions, with and without antiscalant addition. Thus, it was expected to observe the possibility of operating single pass system and necessity to operate two pass system using low energy membrane. Five membrane samples were obtained from two different manufacturers. Three types of feed water pH were used, pH 8, pH 10, and pH 10 with antiscalant addition. Experiment was conducted in parallel to compare membrane performance from two manufacturers. Filtration was run with fully recycle mode for three days. Sample of permeate and feed were taken every 12 hours, and analyzed for their boron and TDS concentration. Membrane samples were also tested for their surface charge. The results showed that boron rejection increases as the feed pH increases. This was caused by dissociation of boric acid to negatively charged borate ion and more negatively charged membrane surface at elevated pH which enhance boron rejection. This study found that single pass reverse osmosis system, with and without elevating the pH, may not be possible to be applied because of two reasons. First, permeate quality in term of boron, does not fulfill WHO and local Saudi Arabia regulations. Second, severe scaling occurs due to operation in alkaline condition, since Ca and Mg concentration are

  3. Determination of free carbon content in boron carbide ceramic powders

    International Nuclear Information System (INIS)

    Castro, A.R.M. de; Lima, N.B. de; Paschoal, J.O.A.

    1990-01-01

    Boron carbide is a ceramic material of technological importance due to its hardness and high chemical and thermal stabilities. Free carbon is always found as a process dependent impurity in boron carbide. The development of procedures for its detection is required because its presence leads to a degradation of the boron carbide properties. In this work, several procedures for determining free carbon content in boron carbide specimens are reported and discussed for comparison purposes. (author) [pt

  4. Reactivity balance for a soluble boron-free small modular reactor

    Directory of Open Access Journals (Sweden)

    Lezani van der Merwe

    2018-06-01

    Full Text Available Elimination of soluble boron from reactor design eliminates boron-induced reactivity accidents and leads to a more negative moderator temperature coefficient. However, a large negative moderator temperature coefficient can lead to large reactivity feedback that could allow the reactor to return to power when it cools down from hot full power to cold zero power. In soluble boron-free small modular reactor (SMR design, only control rods are available to control such rapid core transient.The purpose of this study is to investigate whether an SMR would have enough control rod worth to compensate for large reactivity feedback. The investigation begins with classification of reactivity and completes an analysis of the reactivity balance in each reactor state for the SMR model.The control rod worth requirement obtained from the reactivity balance is a minimum control rod worth to maintain the reactor critical during the whole cycle. The minimum available rod worth must be larger than the control rod worth requirement to manipulate the reactor safely in each reactor state. It is found that the SMR does have enough control rod worth available during rapid transient to maintain the SMR at subcritical below k-effectives of 0.99 for both hot zero power and cold zero power. Keywords: Control Rod Worth, Reactivity Balance, Reactivity Feedback, Small Modular Reactor, Soluble Boron Free

  5. Effect of molybdenum, vanadium, boron on mechanical properties of high chromium white cast iron in as-cast condition

    Science.gov (United States)

    Nurjaman, F.; Sumardi, S.; Shofi, A.; Aryati, M.; Suharno, B.

    2016-02-01

    In this experiment, the effect of the addition carbide forming elements on high chromium white cast iron, such as molybdenum, vanadium and boron on its mechanical properties and microstructure was investigated. The high chromium white cast iron was produced by casting process and formed in 50 mm size of grinding balls with several compositions. Characterization of these grinding balls was conducted by using some testing methods, such as: chemical and microstructure analysis, hardness, and impact test. From the results, the addition of molybdenum, vanadium, and boron on high chromium white cast iron provided a significant improvement on its hardness, but reduced its toughness. Molybdenum induced fully austenitic matrix and Mo2C formation among eutectic M7C3 carbide. Vanadium was dissolved in the matrix and carbide. While boron was played a role to form fine eutectic carbide. Grinding balls with 1.89 C-13.1 Cr-1.32 Mo-1.36 V-0.00051 B in as-cast condition had the highest hardness, which was caused by finer structure of eutectic carbide, needle like structure (upper bainite) matrix, and martensite on its carbide boundary.

  6. Ionic conductivity in BC3 type boron carbon nanolayers

    Directory of Open Access Journals (Sweden)

    Irina V. Zaporotskova

    2017-06-01

    Full Text Available Studies of ionic conductivity and structuresf in which it can be achieved are of great importance for the development of modern batteries. The use of new materials will allow avoiding such typical disadvantages of batteries as short service life, low capacity and leaks. In this article we present the results of our study of the ionic conductivity in boron carbon nanolayers. We have simulated three types of boron carbon nanolayers containing different amounts of boron. The studies have been carried out using the MNDO method within the framework of the molecular cluster model and the DFT method with the B3LYP functional and the 6–31G basis. To study the ion conduction process we have simulated vacancy formation for each type of the nanolayers and studied the energy and electronic characteristics of these processes. We show that 25% boron substitution is the most energetically favorable for vacancy formation. We have also simulated vacancy migration and determined the thermal conductivity as a function of temperature.

  7. Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

    DEFF Research Database (Denmark)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei

    2016-01-01

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors ...

  8. Structural and photoelectrochemical investigation of boron-modified nanostructured tungsten trioxide films

    International Nuclear Information System (INIS)

    Barczuk, Piotr J.; Krolikowska, Agata; Lewera, Adam; Miecznikowski, Krzysztof; Solarska, Renata; Augustynski, Jan

    2013-01-01

    We report a modification of nanostructured WO 3 films by doping with boron. The films were obtained by a direct one-step sol–gel route involving tungstic acid/polyethelene glycol precursor. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) showed that the incorporation of boron results in the retention of a substantial amount of water and/or hydroxyl groups in the WO 3 lattice and at the surface of nanoparticles occurring despite high temperature (550 °C) annealing of the films. Another consequence of boron doping is the largely increased roughness factor revealed by atomic force microscopy (AFM) imaging. Both kinds of films are highly porous and consist of partly sintered particles with sizes in the range of tens of nanometers. The photoelectrochemical (PEC) studies performed under simulated solar AM 1.5 illumination showed significantly enhanced water oxidation photocurrents for B-WO 3 photoanodes, by about 25% higher than those for the undoped WO 3 films of similar thickness. The low extent of recombination of photogenerated charges was confirmed by incident photon-to-current conversion efficiencies (IPCEs) reaching 70% in the region of visible wavelengths at 420 nm. The improved PEC properties were attributed to the increased surface hydroxylation of B-WO 3 nanoparticles favoring water photo-oxidation reaction and to the larger surface area of the film exposed to the electrolyte

  9. Soluble and meltable hyperbranched polyborosilazanes toward high-temperature stable SiBCN ceramics.

    Science.gov (United States)

    Kong, Jie; Wang, Minjun; Zou, Jianhua; An, Linan

    2015-04-01

    High-temperature stable siliconborocarbonitride (SiBCN) ceramics produced from single-source preceramic polymers have received increased attention in the last two decades. In this contribution, soluble and meltable polyborosilazanes with hyperbranched topology (hb-PBSZ) were synthesized via a convenient solvent-free, catalyst-free and one-pot A2 + B6 strategy, an aminolysis reaction of the A2 monomer of dichloromethylsilane and the B6 monomer of tris(dichloromethylsilylethyl)borane in the presence of hexamethyldisilazane. The amine transition reaction between the intermediates of dichlorotetramethyldisilazane and tri(trimethylsilylmethylchlorosilylethyl)borane led to the formation of dendritic units of aminedialkylborons rather than trialkylborons. The cross-linked hb-PBSZ precursors exhibited a ceramic yield higher 80%. The resultant SiBCN ceramics with a boron atomic composition of 6.0-8.5% and a representative formula of Si1B(0.19)C(1.21)N(0.39)O(0.08) showed high-temperature stability and retained their amorphous structure up to 1600 °C. These hyperbranched polyborosilazanes with soluble and meltable characteristics provide a new perspective for the design of preceramic polymers possessing advantages for high-temperature stable polymer-derived ceramics with complex structures/shapes.

  10. Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida

    International Nuclear Information System (INIS)

    Rámila, Consuelo d.P.; Contreras, Samuel A.; Di Domenico, Camila; Molina-Montenegro, Marco A.; Vega, Andrea; Handford, Michael; Bonilla, Carlos A.

    2016-01-01

    Highlights: • P. frigida presents an extremely high boron toxicity threshold. • Restricting uptake and internal tolerance mechanisms could confer boron tolerance. • P. frigida is a boron hyperaccumulator over a wide range of concentrations. • The species has potential for phytoremediation purposes. - Abstract: Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500 mg/L), and within its tissues (>5000 mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems.

  11. Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida

    Energy Technology Data Exchange (ETDEWEB)

    Rámila, Consuelo d.P. [Departamento de Ingeniería Hidráulica y Ambiental, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Contreras, Samuel A.; Di Domenico, Camila [Facultad de Agronomía e Ingeniería Forestal, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Molina-Montenegro, Marco A. [Centro de Estudios Avanzados en Zonas Áridas (CEAZA), Facultad de Ciencias del Mar, Universidad Católica del Norte, Larrondo 1281, Coquimbo (Chile); Instituto de Ciencias Biológicas, Universidad de Talca, Avda. Lircay s/n, Talca (Chile); Vega, Andrea [Facultad de Agronomía e Ingeniería Forestal, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Handford, Michael [Departmento de Biología, Facultad de Ciencias, Universidad de Chile, Avenida Las Palmeras 3425, 7800024 Santiago (Chile); Bonilla, Carlos A. [Departamento de Ingeniería Hidráulica y Ambiental, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Centro de Desarrollo Urbano Sustentable (CEDEUS), Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); and others

    2016-11-05

    Highlights: • P. frigida presents an extremely high boron toxicity threshold. • Restricting uptake and internal tolerance mechanisms could confer boron tolerance. • P. frigida is a boron hyperaccumulator over a wide range of concentrations. • The species has potential for phytoremediation purposes. - Abstract: Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500 mg/L), and within its tissues (>5000 mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems.

  12. Boron ion irradiation induced structural and surface modification of glassy carbon

    International Nuclear Information System (INIS)

    Kalijadis, Ana; Jovanović, Zoran; Cvijović-Alagić, Ivana; Laušević, Zoran

    2013-01-01

    The incorporation of boron into glassy carbon was achieved by irradiating two different types of targets: glassy carbon polymer precursor and carbonized glassy carbon. Targets were irradiated with a 45 keV B 3+ ion beam in the fluence range of 5 × 10 15 –5 × 10 16 ions cm −2 . For both types of targets, the implanted boron was located in a narrow region under the surface. Following irradiation, the polymer was carbonized under the same condition as the glassy carbon samples (at 1273 K) and examined by Raman spectroscopy, temperature programmed desorption, hardness and cyclic voltammetry measurements. Structural analysis showed that during the carbonization process of the irradiated polymers, boron is substitutionally incorporated into the glassy carbon structure, while for irradiated carbonized glassy carbon samples, boron irradiation caused an increase of the sp 3 carbon fraction, which is most pronounced for the highest fluence irradiation. Further analyses showed that different nature of boron incorporation, and thus changed structural parameters, are crucial for obtaining glassy carbon samples with modified mechanical, chemical and electrochemical properties over a wide range

  13. Effect of the Die Temperature and Blank Thickness on the Formability of a Laser-Welded Blank of a Boron Steel Sheet with Removing Al-Si Coating Layer

    Directory of Open Access Journals (Sweden)

    M. S. Lee

    2014-05-01

    Full Text Available Reducing carbon emissions has been a major focus in the automobile industry to address various environmental issues. In particular, studies on parts comprised of high strength sheets and light car bodies are ongoing. Accordingly, this study examined the use of boron steel, which is commonly used in high strength sheets. Boron steel is a type of sheet used for hot stamping parts. Although it has high strength, the elongation is inferior, which reduces its crash energy absorption capacity. To solve this problem, two sheets of different thickness were welded so the thin sheet would absorb crash energy and the thick sheet would work as a support. Boron steel, however, may show weakening at the welding spot due to the Al-Si coating layer used to prevent oxidation from occurring during the welding process. Therefore, a certain part of the coating layer of a double-thickness boron steel sheet that is welded in the hot stamping process is removed through laser ablation, and the formability of the hot-work was examined.

  14. Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Glavin, Nicholas R. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Jespersen, Michael L. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Check, Michael H. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Hu, Jianjun [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Hilton, Al M. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Wyle Laboratories, Dayton, OH 45433 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, Andrey A. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States)

    2014-12-01

    Pulsed laser deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (h-BN) thin films on crystalline highly ordered pyrolytic graphite (HOPG) and sapphire (0001) substrates. The plasma-based processing technique allows for increased excitations of deposited atoms due to background nitrogen gas collisional ionizations and extended resonance time of the energetic species presence at the condensation surface. These processes permit growth of thin, polycrystalline h-BN at 700 °C, a much lower temperature than that required by traditional growth methods. Analysis of the as-deposited films reveals epitaxial-like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h-BN film, and amorphous BN (a-BN) on the sapphire substrates, both with thicknesses of 1.5–2 nm. Stoichiometric films with boron-to-nitrogen ratios of unity were achieved by adjusting the background pressure within the deposition chamber and distance between the target and substrate. The reduction in deposition temperature and formation of stoichiometric, large-area h-BN films by PLD provide a process that is easily scaled-up for two-dimensional dielectric material synthesis and also present a possibility to produce very thin and uniform a-BN. - Highlights: • PLD was used to synthesize boron nitride thin films on HOPG and sapphire substrates. • Lattice matched substrate allowed for formation of polycrystalline h-BN. • Nitrogen gas pressure directly controlled film chemistry and structure. • Technique allows for ultrathin, uniform films at reduced processing temperatures.

  15. Evaluation of Aluminum-Boron Carbide Neutron Absorbing Materials for Interim Storage of Used Nuclear Fuel

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lumin [Univ. of Michigan, Ann Arbor, MI (United States). Department of Nuclear Engineering and Radiological Science; Wierschke, Jonathan Brett [Univ. of Michigan, Ann Arbor, MI (United States). Department of Nuclear Engineering and Radiological Science

    2015-04-08

    The objective of this work was to understand the corrosion behavior of Boral® and Bortec® neutron absorbers over long-term deployment in a used nuclear fuel dry cask storage environment. Corrosion effects were accelerated by flowing humidified argon through an autoclave at temperatures up to 570°C. Test results show little corrosion of the aluminum matrix but that boron is leaching out of the samples. Initial tests performed at 400 and 570°C were hampered by reduced flow caused by the rapid build-up of solid deposits in the outlet lines. Analysis of the deposits by XRD shows that the deposits are comprised of boron trioxide and sassolite (H3BO3). The collection of boron- containing compounds in the outlet lines indicated that boron was being released from the samples. Observation of the exposed samples using SEM and optical microscopy show the growth of new phases in the samples. These phases were most prominent in Bortec® samples exposed at 570°C. Samples of Boral® exposed at 570°C showed minimal new phase formation but showed nearly the complete loss of boron carbide particles. Boron carbide loss was also significant in Boral samples at 400°C. However, at 400°C phases similar to those found in Bortec® were observed. The rapid loss of the boron carbide particles in the Boral® is suspected to inhibit the formation of the new secondary phases. However, Material samples in an actual dry cask environment would be exposed to temperatures closer to 300°C and less water than the lowest test. The results from this study conclude that at the temperature and humidity levels present in a dry cask environment, corrosion and boron leaching will have no effect on the performance of Boral® and Bortec® to maintain criticality control.

  16. Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

    International Nuclear Information System (INIS)

    Mandal, Krishna

    2017-01-01

    High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3 He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3 He will be very desirable. To address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron ( 10 B) and enriched lithium ( 6 Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (t g ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10 -24 cm 2 ), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.

  17. Boron concentration measurements by alpha spectrometry and quantitative neutron autoradiography in cells and tissues treated with different boronated formulations and administration protocols

    International Nuclear Information System (INIS)

    Bortolussi, Silva; Ciani, Laura; Postuma, Ian; Protti, Nicoletta; Luca Reversi,; Bruschi, Piero; Ferrari, Cinzia; Cansolino, Laura; Panza, Luigi; Ristori, Sandra; Altieri, Saverio

    2014-01-01

    The possibility to measure boron concentration with high precision in tissues that will be irradiated represents a fundamental step for a safe and effective BNCT treatment. In Pavia, two techniques have been used for this purpose, a quantitative method based on charged particles spectrometry and a boron biodistribution imaging based on neutron autoradiography. A quantitative method to determine boron concentration by neutron autoradiography has been recently set-up and calibrated for the measurement of biological samples, both solid and liquid, in the frame of the feasibility study of BNCT. This technique was calibrated and the obtained results were cross checked with those of α spectrometry, in order to validate them. The comparisons were performed using tissues taken form animals treated with different boron administration protocols. Subsequently the quantitative neutron autoradiography was employed to measure osteosarcoma cell samples treated with BPA and with new boronated formulations. - Highlights: • A method for 10B measurements in samples based on neutron autoradiography was developed. • The results were compared with those of alpha spectrometry applied on tissue and cell samples. • Boronated liposomes were developed and administered to osteosarcoma cell cultures. • Neutron autoradiography was employed to measure boron concentration due to liposomes. • Liposomes were proved to be more effective in concentrating boron in cells than BPA

  18. New Small LWR Core Designs using Particle Burnable Poisons for Low Boron Concentration

    International Nuclear Information System (INIS)

    Yoo, Ho Seong; Hwang, Dae Hee; Hong, Ser Gi

    2015-01-01

    The soluble boron has two major important roles in commercial PWR operations : 1) the control of the long-term reactivity to maintain criticality under normal operation, and 2) the shutdown of the reactor under accidents. However, the removal of the soluble boron gives several advantages in SMRs (Small Modular Reactor). These advantages resulted from the elimination of soluble boron include the significant simplification of nuclear power plant through the removal of pipes, pumps, and purification systems. Also, the use of soluble boron mitigates corrosion problems on the primary coolant loop. Furthermore, the soluble boron-free operation can remove an inadvertent boron dilution accident (BDA) which can lead to a significant insertion of positive reactivity. From the viewpoint of core physics, the removal of soluble boron or reduction of soluble boron concentration makes the moderator temperature coefficient (MTC) more negative. From the core design studies using new fuel assemblies, it is shown that the cores have very low critical soluble boron concentrations less than 500ppm, low peaking factors within the design targets, strong negative MTCs over cycles, and large enough shutdown margins both at BOC and EOC. However, the present cores have relatively low average discharge burnups of ∼ 30MWD/kg leading to low fuel economy because the cores use lots of non-fuel burnable poison rods to achieve very low critical boron concentrations. So, in the future, we will perform the trade-off study between the fuel discharge burnup and the boron concentrations by changing fuel assembly design and the core loading pattern

  19. New Small LWR Core Designs using Particle Burnable Poisons for Low Boron Concentration

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Ho Seong; Hwang, Dae Hee; Hong, Ser Gi [Kyung Hee University, Yongin (Korea, Republic of)

    2015-05-15

    The soluble boron has two major important roles in commercial PWR operations : 1) the control of the long-term reactivity to maintain criticality under normal operation, and 2) the shutdown of the reactor under accidents. However, the removal of the soluble boron gives several advantages in SMRs (Small Modular Reactor). These advantages resulted from the elimination of soluble boron include the significant simplification of nuclear power plant through the removal of pipes, pumps, and purification systems. Also, the use of soluble boron mitigates corrosion problems on the primary coolant loop. Furthermore, the soluble boron-free operation can remove an inadvertent boron dilution accident (BDA) which can lead to a significant insertion of positive reactivity. From the viewpoint of core physics, the removal of soluble boron or reduction of soluble boron concentration makes the moderator temperature coefficient (MTC) more negative. From the core design studies using new fuel assemblies, it is shown that the cores have very low critical soluble boron concentrations less than 500ppm, low peaking factors within the design targets, strong negative MTCs over cycles, and large enough shutdown margins both at BOC and EOC. However, the present cores have relatively low average discharge burnups of ∼ 30MWD/kg leading to low fuel economy because the cores use lots of non-fuel burnable poison rods to achieve very low critical boron concentrations. So, in the future, we will perform the trade-off study between the fuel discharge burnup and the boron concentrations by changing fuel assembly design and the core loading pattern.

  20. Seed Nutrition and Quality, Seed Coat Boron and Lignin Are Influenced by Delayed Harvest in Exotically-Derived Soybean Breeding Lines under High Heat.

    Science.gov (United States)

    Bellaloui, Nacer; Smith, James R; Mengistu, Alemu

    2017-01-01

    The timing of harvest is a major factor affecting seed quality in soybean, particularly in Midsouthern USA, when rain during harvest period is not uncommon. The objective of this research was to evaluate the effects of time of harvest on soybean seed quality (seed composition, germination, seed coat boron, and lignin) in high germinability (HG) breeding lines (50% exotic) developed under high heat. The hypothesis was that seeds of HG lines possess physiological and genetic traits for a better seed quality at harvest maturity and delayed harvest. A 2-year field experiment was conducted under irrigated conditions. Results showed that, at harvest maturity, the exotic HG lines had higher seed protein, oleic acid, sugars, seed coat boron, and seed coat lignin, but lower seed oil compared with the non-exotic checks (Control), confirming our hypothesis. At 28 days after harvest maturity (delayed harvest), the content of seed protein, oleic acid, sugars, seed coat boron, and seed coat lignin were higher in some of the HG lines compared with the checks, indicating a possible involvement of these seed constituents, especially seed coat boron and seed coat lignin, in maintaining seed coat integrity and protecting seed coat against physical damage. Highly significant positive correlations were found between germination and seed protein, oleic acid, sugars, and seed coat boron and seed coat lignin. Highly significant negative correlation was found between germination and oil, linoleic acid, seed coat wrinkling, shattering, and hard seed. Yields of some HG lines were competitive with checks. This research demonstrated that time of harvesting is an important factor influencing seed protein and oil production. Also, since high oleic acid is desirable for oxidative stability, shelf-life and biodiesel properties, using HG lines could positively influence these important traits. This result should suggest to breeders of some of the advantages of selecting for high seed coat boron and

  1. Boron nitride encapsulated graphene infrared emitters

    International Nuclear Information System (INIS)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

    2016-01-01

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  2. Boron nitride encapsulated graphene infrared emitters

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R., E-mail: g.r.nash@exeter.ac.uk [College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF (United Kingdom)

    2016-03-28

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  3. Three-dimensional nitrogen and boron co-doped graphene for high-performance all-solid-state supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zhong-Shuai; Chen, Long; Sun, Yi; Muellen, Klaus [Max-Planck-Institut fuer Polymerforschung, Ackermannweg 10, 55128 Mainz (Germany); Winter, Andreas; Turchanin, Andrey [Universitaet Bielefeld, Fakultaet fuer Physik, Physik Supramolekularer Systeme und Oberflaechen, Universitaetsstr. 25D, 33615 Bielefeld (Germany); Feng, Xinliang [Max-Planck-Institut fuer Polymerforschung, Ackermannweg 10, 55128 Mainz (Germany); School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, 200240, Shanghai (China)

    2012-09-25

    A simplified prototype device of high-performance all-solid-state supercapacitors (ASSSs) based on 3D nitrogen and boron co-doped monolithic graphene aerogels (BN-GAs) is demonstrated for the first time. The resulting ASSSs show high specific capacitance, good rate capability, and enhanced energy density or power density. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Crystal chemistry and temperature behavior of the natural hydrous borate colemanite, a mineral commodity of boron

    Science.gov (United States)

    Lotti, Paolo; Gatta, G. Diego; Demitri, Nicola; Guastella, Giorgio; Rizzato, Silvia; Ortenzi, Marco Aldo; Magrini, Fabrizio; Comboni, Davide; Guastoni, Alessandro; Fernandez-Diaz, Maria Teresa

    2018-05-01

    Colemanite, CaB3O4(OH)3ṡH2O, is the most common hydrous Ca-borate, as well as a major mineral commodity of boron. In this study, we report a thorough chemical analysis and the low-temperature behavior of a natural sample of colemanite by means of a multi-methodological approach. From the chemical point of view, the investigated sample resulted to be relatively pure, its composition being very close to the ideal one, with only a minor substitution of Sr2+ for Ca2+. At about 270.5 K, a displacive phase transition from the centrosymmetric P21/ a to the acentric P21 space group occurs. On the basis of in situ single-crystal synchrotron X-ray (down to 104 K) and neutron diffraction (at 20 K) data, the hydrogen-bonding configuration of both the polymorphs and the structural modifications at the atomic scale at varying temperatures are described. The asymmetric distribution of ionic charges along the [010] axis, allowed by the loss of the inversion center, is likely responsible for the reported ferroelectric behavior of colemanite below the phase transition temperature.

  5. Simulation of photon attenuation coefficients for high effective shielding material Lead-Boron Polyethyene

    Science.gov (United States)

    Zhang, L.; Jia, M. C.; Gong, J. J.; Xia, W. M.

    2017-12-01

    The mass attenuation coefficient of various Lead-Boron Polyethylene samples which can be used as the photon shielding materials in marine reactor, have been simulated using the MCNP-5 code, and compared with the theoretical values at the photon energy range 0.001MeV—20MeV. A good agreement has been observed. The variations of mass attenuation coefficient, linear attenuation coefficient and mean free path with photon energy between 0.001MeV to 100MeV have been plotted. The result shows that all the coefficients strongly depends on the photon energy, material atomic composition and density. The dose transmission factors for source Cesium-137 and Cobalt-60 have been worked out and their variations with the thickness of various sample materials have also been plotted. The variations show that with the increase of materials thickness the dose transmission factors decrease continuously. The results of this paper can provide some reference for the use of the high effective shielding material Lead-Boron Polyethyene.

  6. CVD boron nitride infiltration of fibrous structures: properties of low temprature deposits

    International Nuclear Information System (INIS)

    Gebhardt, J.J.

    1973-01-01

    The pyrolytic infiltration of boron nitride and silica fibrous structures with boron nitride was investigated using the thermal decomposition of B-trichloroborazole (TCB) to provide the matrix surrounding felted and 4-directional braided constructions. The deposition precursor was generated on a continuous basis by the reaction between boron trichloride and ammonium chloride in a fixed bed reactor under conditions of total conversion of the trichloride: 3BCl 3 + 3NH 4 Cl = B 3 N 3 H 3 Cl 3 + 9HCl. Deposition rates in boron nitride felt specimens varied between 8 and 28 μm/h, depending on the distance from the exterior surface at the minimum deposition temperature used (1100 0 C ). Infiltration of 4-directional silica braids was poorer because of clogging of the fiber bundle surfaces and access paths to voids in the weave. Deposits prepared at 1100 0 C and above were stable to moisture and consisted of glassy transparent materials which had no discernible x-ray diffraction pattern. Heat treatment of low temperature deposits in nitrogen at 1800 0 C caused significant growth of the crystallites and the emergence of x-ray patterns characteristic of hexagonal boron nitride. Heat treatment in vacuum caused changes in the infrared spectrum which could be correlated with mass analyses of the gases evolved. Loss of hydrogen with amines predominated to about 1500 0 C above which point the loss of nitrogen became significant. (14 figures) (U.S.)

  7. High-rate and ultralong cycle-life LiFePO4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Science.gov (United States)

    Feng, Jinpeng; Wang, Youlan

    2016-12-01

    An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO4@B0.4-C can reach 164.1 mAh g-1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g-1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g-1 and can be maintained at 124.5 mAh g-1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO4@B-C composite for high-performance lithium-ion batteries.

  8. Boron autoradiography method applied to the study of steels

    International Nuclear Information System (INIS)

    Gugelmeier, R.; Barcelo, G.N.; Boado, J.H.; Fernandez, C.

    1986-01-01

    The boron state, contained in the steel microestructure, is determined. The autoradiography by neutrons is used, permiting to obtain boron distribution images by means of additional information which is difficult to acquire by other methods. The application of the method is described, based on the neutronic irradiation of a polished steel sample, over which a celulose nitrate sheet or other appropriate material is fixed to constitute the detector. The particles generated by the neutron-boron interaction affect the detector sheet, which is subsequently revealed with a chemical treatment and can be observed at the optical microscope. In the case of materials used for the construction of nuclear reactors, special attention must be given to the presence of boron, since owing to the exceptionaly high capacity of neutron absorption, lowest quantities of boron acquire importance. The adaption of the method to metallurgical problems allows the obtainment of a correlation between the boron distribution images and the material's microstructure. (M.E.L.) [es

  9. Note on boron toxicity in oats

    Energy Technology Data Exchange (ETDEWEB)

    Langille, W M; Mahoney, J F

    1959-01-01

    Boron was applied at the rate of 35 pounds per acre of borax to a field of oats. With the first noticeable growth there appeared a definite chlorotic condition of the oat seedlings on plots receiving boron treatments. Analysis of chlorotic tissue at 3 weeks after seeding indicated 110 ppm boron, while apparently healthy tissue contained 6.1 ppm boron at the same stage of growth. There was a rapid decline in the boron content of the oat tissue as the crop grew older. At maturity the oat tissue from the boron-treated plots contained an average of 14.15 ppm boron as compared with 4.10 boron from untreated areas. Boron toxicity had no harmful effect so far as yields were concerned, under the conditions of this experiment. 3 references.

  10. Anisotropic Hexagonal Boron Nitride Nanomaterials - Synthesis and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Han,W.Q.

    2008-08-01

    Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Periodic Table. However, its properties, in terms of polymorphism and mechanical characteristics, are rather close to those of carbon compared with other III-V compounds, such as gallium nitride. BN crystallizes into a layered or a tetrahedrally linked structure, like those of graphite and diamond, respectively, depending on the conditions of its preparation, especially the pressure applied. Such correspondence between BN and carbon readily can be understood from their isoelectronic structures [1, 2]. On the other hand, in contrast to graphite, layered BN is transparent and is an insulator. This material has attracted great interest because, similar to carbon, it exists in various polymorphic forms exhibiting very different properties; however, these forms do not correspond strictly to those of carbon. Crystallographically, BN is classified into four polymorphic forms: Hexagonal BN (h-BN) (Figure 1(b)); rhombohedral BN (r-BN); cubic BN (c-BN); and wurtzite BN (w-BN). BN does not occur in nature. In 1842, Balmain [3] obtained BN as a reaction product between molten boric oxide and potassium cyanide under atmospheric pressure. Thereafter, many methods for its synthesis were reported. h-BN and r-BN are formed under ambient pressure. c-BN is synthesized from h-BN under high pressure at high temperature while w-BN is prepared from h-BN under high pressure at room temperature [1]. Each BN layer consists of stacks of hexagonal plate-like units of boron and nitrogen atoms linked by SP{sup 2} hybridized orbits and held together mainly by Van der Waals force (Fig 1(b)). The hexagonal polymorph has two-layered repeating units: AA'AA'... that differ from those in graphite: ABAB... (Figure 1(a)). Within the layers of h-BN there is coincidence between the same phases of the hexagons, although the boron atoms and nitrogen atoms are alternatively located along the c

  11. Effect of boron on the microstructure and mechanical properties of carbidic austempered ductile iron

    International Nuclear Information System (INIS)

    Peng Yuncheng; Jin Huijin; Liu Jinhai; Li Guolu

    2011-01-01

    Highlights: → Boron are applied to carbidic austempered ductile iron (CADI). → Boron microalloying CADI is a new high hardenability of wear-resistant cast iron. → Addition of boron to CADI significantly improves hardenability. → Effect of boron on the CADI grinding ball were investigated. → Optimum property is obtained when boron content at 0.03 wt%. - Abstract: Carbidic austempered ductile iron (CADI) castings provide a unique combination of high hardness and toughness coupled with superior wear resistance properties, but their hardenability restricts their range of applications. The purpose of this study was to investigate the influence of boron on the microstructure and mechanical properties of CADI. The experimental results indicate that the CADI comprises graphite nodules, which are dispersive boron-carbides that are distributed in the form of strips, and the matrix is a typical ausferritic matrix. Microscopic amounts of boron can improve the hardenability of CADI, but higher boron content reduces the hardenability and toughness of CADI. The results are discussed in the context of the influence of boron content on the microstructure and mechanical properties of grinding balls.

  12. BC-454 boron-loaded plastic scintillator

    International Nuclear Information System (INIS)

    Bellian, J.G.

    1984-01-01

    Prototype samples of plastic scintillators containing up to 10% by weight of natural boron have been produced. The maximum size scintillators made to date are 28 mm dia. x 100 mm long. Rods containing up to 2% boron are now made routinely and work is progressing on higher concentrations. The plastics are clear and emit the same blue fluorescence as other common plastic scintillators. It is expected that rods up to 3'' dia. containing 5% boron will be produced during the next few months. BC-454 is particularly useful in neutron research, materials studies, some types of neutron dosimetry, and monitoring of medium to high energy neutrons in the presence of other types radiation. It combines attractive features that enhance its usefulness to the physics community

  13. Strain ageing and yield plateau phenomena in γ-TiAl based alloys containing boron

    International Nuclear Information System (INIS)

    Cheng, T.T.; Bate, P.S.; Botten, R.R.; Lipsitt, H.A.

    1999-01-01

    There has been considerable interest over the past few years in γ-TiAl based alloys since they offer a combination of low density and useful mechanical properties at temperatures higher than those possible with conventional titanium alloys. However, there are still serious limitations to their use in engineering components due to their limited ductility and fracture toughness. Much of the recent work has been focused on improving the room temperature ductility of these materials, and a significant part of the work has been involved with studying the effects of thermo-mechanical processing (TMP) and alloying. One of the alloying additions which has received much attention is boron. Addition of boron (≥0.5 at.%) leads to refined as-cast grain structures and can increase the strength and ductility of these alloys. If boron does segregate to grain boundaries, it would be expected that segregation would also occur at dislocations, which can result in solute locking and yield point phenomena. Nakano and Umakoshi's results show some signs of this, with regions of distinct upward curvature in stress-strain curves for boron-containing material, although the flow stress was always increasing with strain. Evidence of strain ageing in TiAl alloys containing boron has also been reported by Wheeler et al., and the work reported here also suggests that boron can act to produce solute locking of glide dislocations in a different class of near γ-TiAl alloys

  14. Boron exposure assessment using drinking water and urine in the North of Chile.

    Science.gov (United States)

    Cortes, S; Reynaga-Delgado, E; Sancha, A M; Ferreccio, C

    2011-12-01

    Boron is an essential trace element for plants and humans however it is still an open question what levels of boron are actually safe for humans. This study, conducted between 2006 and 2010, measured exposure levels of boron in drinking water and urine of volunteers in Arica, an area in the North of Chile with high levels of naturally occurring boron. Samples were taken of tap and bottled water (173 and 22, respectively), as well as urine from 22 volunteers, and subsequently analyzed by inductively coupled plasma spectroscopy (ICP-OES). Boron varied in public tap water from 0.22 to 11.3mgL(-1), with a median value of 2.9mgL(-1), while concentrations of boron in bottled water varied from 0.01 to 12.2mgL(-1). Neither tap nor bottled water samples had concentrations of boron within WHO recommended limits. The concentration of boron in urine varied between 0.45 and 17.4mgL(-1), with a median of 4.28mgL(-1) and was found to be correlated with tap water sampled from the homes of the volunteers (r=0.64). Authors highly recommend that in northern Chile - where levels of boron are naturally high - that the tap and bottled water supplies be monitored in order to protect public health and that regulatory standards also be established for boron in drinking water in order to limit exposure. Copyright © 2011 Elsevier B.V. All rights reserved.

  15. Boron exposure assessment using drinking water and urine in the North of Chile

    Energy Technology Data Exchange (ETDEWEB)

    Cortes, S., E-mail: scortes@med.puc.cl [Departamento de Salud Publica, Pontificia Universidad Catolica de Chile, Santiago (Chile); Reynaga-Delgado, E. [Centro de Investigaciones Biologicas del Noroeste, La Paz B.C.S. (Mexico); Sancha, A.M. [Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Santiago (Chile); Ferreccio, C. [Departamento de Salud Publica, Pontificia Universidad Catolica de Chile, Santiago (Chile)

    2011-12-01

    Boron is an essential trace element for plants and humans however it is still an open question what levels of boron are actually safe for humans. This study, conducted between 2006 and 2010, measured exposure levels of boron in drinking water and urine of volunteers in Arica, an area in the North of Chile with high levels of naturally occurring boron. Samples were taken of tap and bottled water (173 and 22, respectively), as well as urine from 22 volunteers, and subsequently analyzed by inductively coupled plasma spectroscopy (ICP-OES). Boron varied in public tap water from 0.22 to 11.3 mg L{sup -1}, with a median value of 2.9 mg L{sup -1}, while concentrations of boron in bottled water varied from 0.01 to 12.2 mg L{sup -1}. Neither tap nor bottled water samples had concentrations of boron within WHO recommended limits. The concentration of boron in urine varied between 0.45 and 17.4 mg L{sup -1}, with a median of 4.28 mg L{sup -1} and was found to be correlated with tap water sampled from the homes of the volunteers (r = 0.64). Authors highly recommend that in northern Chile - where levels of boron are naturally high - that the tap and bottled water supplies be monitored in order to protect public health and that regulatory standards also be established for boron in drinking water in order to limit exposure.

  16. EFFECT OF CONTROLLED QUENCHING ON THE AGING OF 2024 ALUMINUM ALLOY CONTAINING BORON

    Directory of Open Access Journals (Sweden)

    N. Khatami

    2014-03-01

    Full Text Available The presence of alloying elements, sometimes in a very small amount, affects mechanical properties one of these elements is Boron. In Aluminum industries, Boron master alloy is widely used as a grain refiner In this research, the production process of Aluminum –Boron master alloy was studied at first then, it was concurrently added to 2024 Aluminum alloy. After rolling and homogenizing the resulting alloy, the optimal temperature and time of aging were determined during the precipitation hardening heat treatment by controlled quenching (T6C. Then, in order to find the effect of controlled quenching, different cycles of heat treatment including precipitation heat treatment by controlled quenching (T6C and conventional quenching (T6 were applied on the alloy at the aging temperature of 110°C. Mechanical properties of the resulting alloy were evaluated after aging at optimum temperature of 110°C by performing mechanical tests including hardness and tensile tests. The results of hardness test showed that applying the controlled quenching instead of conventional quenching in precipitation heat treatment caused reduction in the time of reaching the maximum hardness and also increase in hardness rate due to the generated thermo-elastic stresses rather than hydrostatic stresses and increased atomic diffusion coefficient as well. Tensile test results demonstrated that, due to the presence of boride particles in the microstructure of the present alloy, the ultimate tensile strength in the specimens containing Boron additive increased by 3.40% in comparison with the specimens without such an additive and elongation (percentage of relative length increase which approximately increased by 38.80% due to the role of Boron in the increase of alloy ductility

  17. Boron-11 MRI and MRS of intact animals infused with a boron neutron capture agent

    International Nuclear Information System (INIS)

    Kabalka, G.W.; Davis, M.; Bendel, P.

    1988-01-01

    Boron neutron capture therapy (BNCT) depends on the delivery of boron-containing drugs to a targeted lesion. Currently, the verification and quantification of in vivo boron content is a difficult problem. Boron-11 spectroscopy was utilized to confirm the presence of a dimeric sulfhydryl dodecaborane BNCT agent contained in an intact animal. Spectroscopy experiments revealed that the decay time of transverse magnetization of the boron-11 spins was less than 1 ms which precluded the use of a 2DFT imaging protocol. A back-projection protocol was developed and utilized to generate the first boron-11 image of a BNCT agent in the liver of an intact Fisher 344 rat

  18. Effect of concentrated light on morphology and vibrational properties of boron and tantalum mixtures

    Directory of Open Access Journals (Sweden)

    Lina Sartinska

    2018-03-01

    Full Text Available Heating a mixture of boron (impurities: carbon ∼ B50C2, boric acid – H3BO3 and tantalum (Ta powders in nitrogen flow in a xenon high-flux optical furnace was performed. As-received powder composed of h-BN, H3BO3, TaB2, B9H11 and a number of other phases including β-rhombohedral boron, apparently, heavily doped with Ta. FT–IR examination of any sample of the material reveals the complicated vibration spectrum containing, in particular, an absorption band near 2260 cm−1. The shapes of these bands are different for samples because powders were synthesized at different temperatures. Known, that in β-rhombohedral boron lattice, there are nano-sized voids of different types, which allow an accommodation of single atoms or small groups of atoms. Theoretical calculations performed by the method of quasi-classical type yields the same value, 2260 cm−1, for the vibrations frequency of Ta atoms in D-type crystallographic voids in β-rhombohedral boron lattice. Since, Ta atoms are known to prefer accommodation just in D-voids the experimentally detected bands can be identified with localized vibrations of Ta atoms. Keywords: Condensed matter physics, Materials science, Nanotechnology

  19. Molecular dynamics study on the thermal conductivity and thermal rectification in graphene with geometric variations of doped boron

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Qi, E-mail: alfred_02030210@163.com; Wei, Yuan

    2014-03-15

    Thermal conductivity and thermal rectification of graphene with geometric variations have been investigated by using classical non-equilibrium molecular dynamics simulation, and analyzed theoretically the cause of the changes of thermal conductivity and thermal rectification. Two different structural models, triangular single-boron-doped graphene (SBDG) and parallel various-boron-doped graphene (VBDG), were considered. The results indicated that the thermal conductivities of two different models are about 54–63% lower than pristine graphene. And it was also found that the structure of parallel various-boron-doped graphene is inhibited more strongly on the heat transfer than that of triangular single-boron-doped graphene. The reduction in the thermal conductivities of two different models gradually decreases as the temperature rises. The thermal conductivities of triangular boron-doped graphene have a large difference in both directions, and the thermal rectification of this structure shows the downward trend with increasing temperature. However, the thermal conductivities of parallel various-boron-doped graphene are similar in both directions, and the thermal rectification effect is not obvious in this structure. The phenomenon of thermal rectification exits in SBDG. It implies that the SBDG might be a potential promising structure for thermal rectifier by controlling the boron-doped model.

  20. Molecular dynamics study on the thermal conductivity and thermal rectification in graphene with geometric variations of doped boron

    International Nuclear Information System (INIS)

    Liang, Qi; Wei, Yuan

    2014-01-01

    Thermal conductivity and thermal rectification of graphene with geometric variations have been investigated by using classical non-equilibrium molecular dynamics simulation, and analyzed theoretically the cause of the changes of thermal conductivity and thermal rectification. Two different structural models, triangular single-boron-doped graphene (SBDG) and parallel various-boron-doped graphene (VBDG), were considered. The results indicated that the thermal conductivities of two different models are about 54–63% lower than pristine graphene. And it was also found that the structure of parallel various-boron-doped graphene is inhibited more strongly on the heat transfer than that of triangular single-boron-doped graphene. The reduction in the thermal conductivities of two different models gradually decreases as the temperature rises. The thermal conductivities of triangular boron-doped graphene have a large difference in both directions, and the thermal rectification of this structure shows the downward trend with increasing temperature. However, the thermal conductivities of parallel various-boron-doped graphene are similar in both directions, and the thermal rectification effect is not obvious in this structure. The phenomenon of thermal rectification exits in SBDG. It implies that the SBDG might be a potential promising structure for thermal rectifier by controlling the boron-doped model

  1. Body temperature norms

    Science.gov (United States)

    Normal body temperature; Temperature - normal ... Morrison SF. Regulation of body temperature. In: Boron WF, Boulpaep EL, eds. Medical Physiology . 3rd ed. Philadelphia, PA: Elsevier; 2017:chap 59. Sajadi MM, Mackowiak ...

  2. Hot tensile behaviour in silicon-killed boron microalloyed steels

    Science.gov (United States)

    Chown, Lesley H.; Cornish, Lesley A.

    2017-10-01

    Low carbon steel for drawing and cold heading applications should have low strength, high ductility and low strain ageing rates. To achieve this, nitrogen must be removed from solid solution, which can be done by low additions of boron. A wire producer had been experiencing occasional problems with severe cracking on silicon-killed, boron steel billets during continuous casting, but the solution was not obvious. Samples from four billets, each from different casts, were removed for analysis and testing. The tested steel compositions were within the specification limits, with boron to nitrogen ratios of 0.40-1.19. Hot ductility testing was performed on a Gleeble 1500 using parameters approximating the capabilities of this particular billet caster. The steel specimens were subjected to in situ melting, then cooled at a rate of 2 C.s-1 to temperatures in the range 750-1250°C, where they were then pulled to failure at a strain rate of 8x10-4 s-1. In this work, it was found that both the boron to nitrogen ratio and the manganese to sulphur ratio influenced the hot ductility and hence the crack susceptibility. Excellent hot ductility was found for B:N ratios above 1.0, which confirmed that the B:N ratio should be above a stoichiometric value of 0.8 to remove all nitrogen from solid solution. TEM analysis showed that coarse BN precipitates nucleated on other precipitates, such as (Fe,Mn)S, which have relatively low melting points, and are detrimental to hot ductility. Low Mn:S ratios of 10 - 12 were shown to promote precipitation of FeS, so a Mn:S > 14 was recommended. A narrower billet surface temperature range for straightening was recommended to prevent transverse surface cracking. Additionally, analysis of industrial casting data showed that the scrap percentage due to transverse cracking increased significantly for Mn:S < 14. An exponential decay relationship between the manganese to sulphur ratio and the average scrap percentage due to transverse cracking was

  3. Development of effective methods for determination of boron in soils and soil solutions

    Directory of Open Access Journals (Sweden)

    Мaruan Tanasheva

    2012-12-01

    Full Text Available This paper is related to serious ecological problem in agriculture: soil degradation in rice fields in South Kazakhstan and in particular, to boron toxicity in rice, which resulted in reduced crop yields. The following abiotic factors were studied to determine the ability of boron to accumulate in rice fields: soil type, soil properties like salinity and acidity', season (level of precipitation, water logging /water shortage. The results shows that the severity of boron excess for fertility of rice crop which depends on boron ionic composition in soil. Adverse impact of both boron deficiency and boron excess are discussed. The necessity of boron fertilizers is shown for soils with high boron mobility.

  4. Activation behavior of boron implanted poly-Si on glass substrate

    International Nuclear Information System (INIS)

    Furuta, M.; Shimamura, K.; Tsubokawa, H.; Tokushige, K.; Furuta, H.; Hirao, T.

    2010-01-01

    The activation behavior of boron (B) implanted poly-Si films on glass substrates has been investigated. The effect of B dose and annealing temperature on crystal defects and electrical properties of the films were evaluated by Raman spectroscopy and Hall measurement. It was found that the maximum activation ratio of the film with B dose of 1 x 10 15 cm -2 was obtained when Raman peak associated with disordered amorphous silicon disappeared. However, reverse anneal was observed in the film when the annealing temperature further increased. The results from secondary ion mass spectrometry and Hall measurement revealed that B segregation at the top and bottom interface and deactivation of B substitutional occurred simultaneously in the high-dose specimens when the annealing temperature increased from 600 to 750 o C.

  5. Reproductive toxicity in boron exposed workers in Bandirma, Turkey.

    Science.gov (United States)

    Başaran, Nurşen; Duydu, Yalçin; Bolt, Hermann M

    2012-06-01

    Boric acid and sodium borates have been considered as being "toxic to reproduction and development", following results of animal studies with high doses. However unfavorable effects of boron exposure on reproduction and development have not been proved in epidemiological studies so far. The aim of the present study was to investigate the reproductive toxicity indicators in highly exposed workers employed in a boric acid production plant in Bandırma, Turkey. Two hundred and four workers participated in this study. The mean blood boron concentration of the high exposure group of workers was 223.89 ± 69.49 (152.82-454.02)ng/g. Unfavorable effects of boron exposure on the reproductive toxicity indicators were not observed. Copyright © 2012 Elsevier GmbH. All rights reserved.

  6. Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.

    Science.gov (United States)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi

    2016-09-21

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

  7. Design and Fabrication of a Piezoresistive Pressure Sensor for Ultra High Temperature Environment

    International Nuclear Information System (INIS)

    Zhao, L B; Zhao, Y L; Jiang, Z D

    2006-01-01

    In order to solve the pressure measurement problem in the harsh environment, a piezoresistive pressure sensor has been developed, which can be used under high temperature above 200 deg. C and is able to endure instantaneous ultra high temperature (2000deg. C, duration≤2s) impact. Based on the MEMS (Micro Electro-Mechanical System) and integrated circuit technology, the piezoresistive pressure sensor's sensitive element was fabricated and constituted by silicon substrate, a thin buried silicon dioxide layer, four p-type resistors in the measuring circuit layer by boron ion implantation and photolithography, the top SiO2 layer by oxidation, stress matching Si3N4 layer, and a Ti-Pt-Au beam lead layer for connecting p-type resistors by sputtering. In order to decrease the leak-current influence to sensor in high temperature above 200deg. C, the buried SiO2 layer with the thickness 367 nm was fabricated by the SIMOX (Separation by Implantation of Oxygen) technology, which was instead of p-n junction to isolate the upper measuring circuit layer from Si substrate. In order to endure instantaneous ultra high temperature impact, the mechanical structure with cantilever and diaphragm and transmitting beam was designed. By laser welding and high temperature packaging technology, the high temperature piezoresistive pressure sensor was fabricated with range of 120MPa. After the thermal compensation, the sensor's thermal zero drift k 0 and thermal sensitivity drift k s were easy to be less than 3x10 -4 FS/deg. C. The experimental results show that the developed piezoresistive pressure sensor has good performances under high temperature and is able to endure instantaneous ultra high temperature impact, which meets the requirements of modern industry, such as aviation, oil, engine, etc

  8. Boron exposure through drinking water during pregnancy and birth size.

    Science.gov (United States)

    Igra, Annachiara Malin; Harari, Florencia; Lu, Ying; Casimiro, Esperanza; Vahter, Marie

    2016-10-01

    Boron is a metalloid found at highly varying concentrations in soil and water. Experimental data indicate that boron is a developmental toxicant, but the few human toxicity data available concern mostly male reproduction. To evaluate potential effects of boron exposure through drinking water on pregnancy outcomes. In a mother-child cohort in northern Argentina (n=194), 1-3 samples of serum, whole blood and urine were collected per woman during pregnancy and analyzed for boron and other elements to which exposure occurred, using inductively coupled plasma mass spectrometry. Infant weight, length and head circumference were measured at birth. Drinking water boron ranged 377-10,929μg/L. The serum boron concentrations during pregnancy ranged 0.73-605μg/L (median 133μg/L) and correlated strongly with whole-blood and urinary boron, and, to a lesser extent, with water boron. In multivariable-adjusted linear spline regression analysis (non-linear association), we found that serum boron concentrations above 80μg/L were inversely associated with birth length (B-0.69cm, 95% CI -1.4; -0.024, p=0.043, per 100μg/L increase in serum boron). The impact of boron appeared stronger when we restricted the exposure to the third trimester, when the serum boron concentrations were the highest (0.73-447μg/L). An increase in serum boron of 100μg/L in the third trimester corresponded to 0.9cm shorter and 120g lighter newborns (p=0.001 and 0.021, respectively). Considering that elevated boron concentrations in drinking water are common in many areas of the world, although more screening is warranted, our novel findings warrant additional research on early-life exposure in other populations. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

  9. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo; Li, Zhenyu; Sarp, Sarper; Park, Y. G.; Amy, Gary L.; Vrouwenvelder, Johannes S.

    2014-01-01

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  10. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo

    2014-07-17

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  11. Origin of high ammonium, arsenic and boron concentrations in the proximity of a mine: Natural vs. anthropogenic processes

    International Nuclear Information System (INIS)

    Scheiber, Laura; Ayora, Carlos; Vázquez-Suñé, Enric; Cendón, Dioni I.; Soler, Albert; Baquero, Juan Carlos

    2016-01-01

    High ammonium (NH_4), arsenic (As) and boron (B) concentrations are found in aquifers worldwide and are often related to human activities. However, natural processes can also lead to groundwater quality problems. High NH_4, As and B concentrations have been identified in the confined, deep portion of the Niebla-Posadas aquifer, which is near the Cobre Las Cruces (CLC) mining complex. The mine has implemented a Drainage and Reinjection System comprising two rings of wells around the open pit mine, were the internal ring drains and the external ring is used for water reinjection into the aquifer. Differentiating geogenic and anthropogenic sources and processes is therefore crucial to ensuring good management of groundwater in this sensitive area where groundwater is extensively used for agriculture, industry, mining and human supply. No NH_4, As and B are found in the recharge area, but their concentrations increase with depth, salinity and residence time of water in the aquifer. The increased salinity down-flow is interpreted as the result of natural mixing between infiltrated meteoric water and the remains of connate waters (up to 8%) trapped within the pores. Ammonium and boron are interpreted as the result of marine solid organic matter degradation by the sulfate dissolved in the recharge water. The light δ"1"5N_N_H_4 values confirm that its origin is linked to marine organic matter. High arsenic concentrations in groundwater are interpreted as being derived from reductive dissolution of As-bearing goethite by dissolved organic matter. The lack of correlation between dissolved Fe and As is explained by the massive precipitation of siderite, which is abundantly found in the mineralization. Therefore, the presence of high arsenic, ammonium and boron concentrations is attributed to natural processes. Ammonium, arsenic, boron and salinity define three zones of groundwater quality: the first zone is close to the recharge area and contains water of sufficient quality

  12. Origin of high ammonium, arsenic and boron concentrations in the proximity of a mine: Natural vs. anthropogenic processes

    Energy Technology Data Exchange (ETDEWEB)

    Scheiber, Laura, E-mail: scheiber.ls@gmail.com [Institute of Environmental Assessment and Water Research, CSIC, Jordi Girona 18. E-08034 Barcelona (Spain); Ayora, Carlos; Vázquez-Suñé, Enric [Institute of Environmental Assessment and Water Research, CSIC, Jordi Girona 18. E-08034 Barcelona (Spain); Cendón, Dioni I. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); School of Biological, Earth and Environmental Sciences (BEES), University of New South Wales (UNSW), NSW 2052 (Australia); Soler, Albert [Departament de Cristallografia, Mineralogia i Dipòsits Minerals, Facultat de Geologia, Universitat de Barcelona, C/Martí Franquès, sn., Barcelona (Spain); Baquero, Juan Carlos [Cobre Las Cruces S.A., Carretera SE-3410 km 4, 41860 Gerena, Sevilla (Spain)

    2016-01-15

    High ammonium (NH{sub 4}), arsenic (As) and boron (B) concentrations are found in aquifers worldwide and are often related to human activities. However, natural processes can also lead to groundwater quality problems. High NH{sub 4}, As and B concentrations have been identified in the confined, deep portion of the Niebla-Posadas aquifer, which is near the Cobre Las Cruces (CLC) mining complex. The mine has implemented a Drainage and Reinjection System comprising two rings of wells around the open pit mine, were the internal ring drains and the external ring is used for water reinjection into the aquifer. Differentiating geogenic and anthropogenic sources and processes is therefore crucial to ensuring good management of groundwater in this sensitive area where groundwater is extensively used for agriculture, industry, mining and human supply. No NH{sub 4}, As and B are found in the recharge area, but their concentrations increase with depth, salinity and residence time of water in the aquifer. The increased salinity down-flow is interpreted as the result of natural mixing between infiltrated meteoric water and the remains of connate waters (up to 8%) trapped within the pores. Ammonium and boron are interpreted as the result of marine solid organic matter degradation by the sulfate dissolved in the recharge water. The light δ{sup 15}N{sub NH4} values confirm that its origin is linked to marine organic matter. High arsenic concentrations in groundwater are interpreted as being derived from reductive dissolution of As-bearing goethite by dissolved organic matter. The lack of correlation between dissolved Fe and As is explained by the massive precipitation of siderite, which is abundantly found in the mineralization. Therefore, the presence of high arsenic, ammonium and boron concentrations is attributed to natural processes. Ammonium, arsenic, boron and salinity define three zones of groundwater quality: the first zone is close to the recharge area and contains water

  13. Boron isotope fractionation in magma via crustal carbonate dissolution.

    Science.gov (United States)

    Deegan, Frances M; Troll, Valentin R; Whitehouse, Martin J; Jolis, Ester M; Freda, Carmela

    2016-08-04

    Carbon dioxide released by arc volcanoes is widely considered to originate from the mantle and from subducted sediments. Fluids released from upper arc carbonates, however, have recently been proposed to help modulate arc CO2 fluxes. Here we use boron as a tracer, which substitutes for carbon in limestone, to further investigate crustal carbonate degassing in volcanic arcs. We performed laboratory experiments replicating limestone assimilation into magma at crustal pressure-temperature conditions and analysed boron isotope ratios in the resulting experimental glasses. Limestone dissolution and assimilation generates CaO-enriched glass near the reaction site and a CO2-dominated vapour phase. The CaO-rich glasses have extremely low δ(11)B values down to -41.5‰, reflecting preferential partitioning of (10)B into the assimilating melt. Loss of (11)B from the reaction site occurs via the CO2 vapour phase generated during carbonate dissolution, which transports (11)B away from the reaction site as a boron-rich fluid phase. Our results demonstrate the efficacy of boron isotope fractionation during crustal carbonate assimilation and suggest that low δ(11)B melt values in arc magmas could flag shallow-level additions to the subduction cycle.

  14. Boron isotope fractionation in magma via crustal carbonate dissolution

    Science.gov (United States)

    Deegan, Frances M.; Troll, Valentin R.; Whitehouse, Martin J.; Jolis, Ester M.; Freda, Carmela

    2016-08-01

    Carbon dioxide released by arc volcanoes is widely considered to originate from the mantle and from subducted sediments. Fluids released from upper arc carbonates, however, have recently been proposed to help modulate arc CO2 fluxes. Here we use boron as a tracer, which substitutes for carbon in limestone, to further investigate crustal carbonate degassing in volcanic arcs. We performed laboratory experiments replicating limestone assimilation into magma at crustal pressure-temperature conditions and analysed boron isotope ratios in the resulting experimental glasses. Limestone dissolution and assimilation generates CaO-enriched glass near the reaction site and a CO2-dominated vapour phase. The CaO-rich glasses have extremely low δ11B values down to -41.5‰, reflecting preferential partitioning of 10B into the assimilating melt. Loss of 11B from the reaction site occurs via the CO2 vapour phase generated during carbonate dissolution, which transports 11B away from the reaction site as a boron-rich fluid phase. Our results demonstrate the efficacy of boron isotope fractionation during crustal carbonate assimilation and suggest that low δ11B melt values in arc magmas could flag shallow-level additions to the subduction cycle.

  15. Separation of boron isotopes using NMG type anion exchange resin

    International Nuclear Information System (INIS)

    Itagaki, Takaharu; Kosuge, Masao; Fukuda, Junji; Fujii, Yasuhiko.

    1992-01-01

    Ion exchange separation of boron isotopes (B-10 and B-11) has been studied by using a special boron selective ion exchange resin; NMG (n-methyl glucamine)-type anion exchange resin. The resin has shown a large isotope separation coefficient of 1.02 at the experimental conditions of temperature, 80degC, and boric acid concentration, 0.2 M (mole/dm 3 ). Enriched B-10 (92%) was obtained after the migration of 1149 m by a recyclic operation of ion exchange columns in a merry-go-round method. (author)

  16. On the Role of Boron in CdTe and CdZnTe Crystals

    Science.gov (United States)

    Pavesi, M.; Marchini, L.; Zha, M.; Zappettini, A.; Zanichelli, M.; Manfredi, M.

    2011-10-01

    It is well known that group III elements act as donors if they play a substitutional role at the metallic site in II-tellurides; nevertheless, several studies report both on the creation of complexes with vacancies, named A-centers, and on the involvement in self-compensation mechanisms, especially for indium. The boron concentration in II-tellurides is negligible, and its contribution to transport mechanisms has not been studied yet. For the last few years the authors have been developing a new technique to grow CdZnTe by the vertical Bridgman technique, taking advantage of encapsulation by means of boron oxide. In this way, crystals characterized by large single grains, low etch pit density, and high resistivity have been obtained. Recently, x-ray detectors with state-of-the-art performance have been produced from such crystals. Boron contamination, as a consequence of this growth method, is quite low but at least one order of magnitude above values obtained with other growth techniques. Besides being a low-cost technique which is also suitable for large-scale mass production, the encapsulated vertical Bridgman technique is quite useful to prevent dislocations, grain boundaries, and stacking faults; for these reasons, careful characterization was performed to understand the effect of boron both on the electrical properties and on the spectroscopic performance of the final crystals. Our characterization is mainly based on low-temperature photoluminescence in addition to electrical current-voltage measurements, photostimulated current, and x-ray spectroscopy. The results indicate that boron behaves like other group III elements; in fact, boron forms a complex that does not affect the good performance of our x-ray detectors, even if it shows some properties which are typical of A-centers.

  17. Boronization and Carburization of Superplastic Stainless Steel and Titanium-Based Alloys

    Directory of Open Access Journals (Sweden)

    Masafumi Matsushita

    2011-07-01

    Full Text Available Bronization and carburization of fine-grain superplastic stainless steel is reviewed, and new experimental results for fine grain Ti88.5Al4.5V3Fe2Mo2 are reported. In superplastic duplex stainless steel, the diffusion of carbon and boron is faster than in non-superplastic duplex stainless steel. Further, diffusion is activated by uniaxial compressive stress. Moreover, non-superplastic duplex stainless steel shows typical grain boundary diffusion; however, inner grain diffusion is confirmed in superplastic stainless steel. The presence of Fe and Cr carbides or borides is confirmed by X-ray diffraction, which indicates that the diffused carbon and boron react with the Fe and Cr in superplastic stainless steel. The Vickers hardness of the carburized and boronized layers is similar to that achieved with other surface treatments such as electro-deposition. Diffusion of boron into the superplastic Ti88.5Al4.5V3Fe2Mo2 alloy was investigated. The hardness of the surface exposed to boron powder can be increased by annealing above the superplastic temperature. However, the Vickers hardness is lower than that of Ti boride.

  18. Boron removal by electrocoagulation and recovery.

    Science.gov (United States)

    Isa, Mohamed Hasnain; Ezechi, Ezerie Henry; Ahmed, Zubair; Magram, Saleh Faraj; Kutty, Shamsul Rahman Mohamed

    2014-03-15

    This work investigated the removal of boron from wastewater and its recovery by electrocoagulation and hydrothermal mineralization methods respectively. The experimental design was developed using Box-Behnken Model. An initial study was performed based on four preselected variables (pH, current density, concentration and time) using synthetic wastewater. Response surface methodology (RSM) was used to evaluate the effect of process variables and their interaction on boron removal. The optimum conditions were obtained as pH 6.3, current density 17.4 mA/cm(2), and time 89 min. At these applied optimum conditions, 99.7% boron removal from an initial concentration of 10.4 mg/L was achieved. The process was effectively optimized by RSM with a desirability value of 1.0. The results showed that boron removal efficiency enhanced with increase in current density and treatment time. Removal efficiency also increased when pH was increased from 4 to 7 and subsequently decreased at pH 10. Adsorption kinetics study revealed that the reaction followed pseudo second order kinetic model; evidenced by high correlation and goodness of fit. Thermodynamics study showed that mechanism of boron adsorption was chemisorption and the reaction was endothermic in nature. Furthermore, the adsorption process was spontaneous as indicated by negative values of the adsorption free energy. Treatment of real produced water using electrocoagulation resulted in 98% boron removal. The hydrothermal mineralization study showed that borate minerals (Inyoite, Takadaite and Nifontovite) can be recovered as recyclable precipitate from electrocoagulation flocs of produced water. Copyright © 2013 Elsevier Ltd. All rights reserved.

  19. Spectrophotometric determination of boron by solvent extraction with 2-hydroxy-2-methylbutyric acid and malachite green

    International Nuclear Information System (INIS)

    Sato, Shigeya; Uchikawa, Sumio

    1984-01-01

    A very simple and sensitive method for the spectrophotometric determination of boron was developed. Boron was found to react with 2-hydroxy-2-methylbutyric acid in weak acidic aqueous solution at room temperature to form a complex anion which can be extracted into chlorobenzene with malachite green in a single extraction; boron is determined indirectly by measuring the absorbance of malachite green in the extract at 629 nm. The calibration graph is linear over the range (7.50 x 10 -7 - 2.00 x 10 -5 ) mol dm -3 boron; the apparent molar absorptivity is 6.50 x 10 4 dm 3 mol -1 cm -1 . The method is applied to the determination of micro amounts of boron in natural waters with satisfactory results. (author)

  20. Boron-containing thioureas for neutron capture therapy. Borhaltige Thioharnstoffe fuer die Neutroneneinfangtherapie

    Energy Technology Data Exchange (ETDEWEB)

    Ketz, H.

    1993-10-21

    Melanin is produced in large amounts in malignant melanotic melanomas. Because thiourea compounds are covalently incorporated into melanin during its biosynthesis, the preparation of boronated thiourea-derivatives is of particular interest for the BNCT (Boron Neutron Capture Therapy). Accumulation of boron in tumors by means of boronated thiourea-derivatives may therefore provide levels of [sup 10]B which are useful for BNCT. In BNCT the tumor containing the boron compound is irradiated with epithermal neutrons to generate He- and Li-nuclei from the [sup 10]B which can then destroy the tumor cells. Because of the short ranges of these particles (approximately one cell diameter) the damage will be almost exclusively confined to the tumor leaving normal tissue unharmed. High accumulation of 2-mercapto-1-methylimidazole (methimazole) in melanotic melanomas has been described in the literature. Boronated derivatives of methimazole were therefore synthesized. Boron was in the form of a boronic acid, a nido-carbonate and a mercaptoundeca hydro-closo-dodecaborate (BSH). The synthesis of the boron cluster derivatives of methimazole (nido-carborate- and BSH-derivatives) with 9 resp. 12 boron atoms in the molecule were expected to achieve higher concentrations of boron in the tumor than in the case of the boronic acid compound with its single boron atom. (orig.)

  1. The Influence of Parameters Affecting Boron Removal by Electrocoagulation Process

    KAUST Repository

    Zeboudji, B.

    2013-04-01

    Boron removal in seawater desalination presents a particular challenge. In seawater reverse osmosis (SWRO) systems boron removal at low concentration (<0.5 mg/L) is usually achieved by a second pass using brackish water RO membranes. However, this process requires chemical addition and important additional investment, operation and maintenance, and energy costs. Electrocoagulation (EC) process can be used to achieve such low boron concentration. In this work, the removal of boron from aqueous solution was carried out by EC process using aluminum and iron electrodes. Several operating parameters on the removal efficiency such as initial pH, current density, initial boron ion concentration, feed concentration, gap between electrodes, and electrode material, were investigated. In the case of bipolar electrocoagulation (BEC), an optimum removal efficiency of 96% corresponding to a final boron concentration of 0.4 mg/L was achieved at a current density of 6 mA/cm2 and pH = 8 using aluminum electrodes. The concentration of NaCl was 2,500 mg/L and the gap between the electrodes of 0.5 cm. Furthermore, a comparison between monopolar electrocoagulation (MEC) and BEC using both aluminum and iron electrodes was carried out. Results showed that the BEC process has reduced the current density applied to obtain high level of boron removal in a short reaction time compared to MEC process. The high performance of the EC showed that the process could be used to reduce boron concentration to acceptable levels at low-cost and more environmentally friendly. © 2013 Copyright Taylor and Francis Group, LLC.

  2. The investigation of parameters affecting boron removal by electrocoagulation method

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar; Keskinler, Buelent

    2005-01-01

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm 2 . The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl 2 . Added CaCl 2 increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions

  3. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  4. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    International Nuclear Information System (INIS)

    Moreno, M.; Delgadillo, N.; Torres, A.; Ambrosio, R.; Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W.

    2013-01-01

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E a ) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ RT ), E a and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E a , TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors

  5. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    International Nuclear Information System (INIS)

    Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

    2014-01-01

    Highlights: • Gel electrolyte is prepared and used in electric double layer capacitor. • Insertion of boron crosslinks into GO agglomerates opens channels for ion migration. • Solid supercapacitors show excellent specific capacitance and cycle stability. • Nanocomposite electrolyte shows better thermal stability and mechanical properties. - Abstract: A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs

  6. Determination of boron isotope ratios by high-resolution continuum source molecular absorption spectrometry using graphite furnace vaporizers

    Science.gov (United States)

    Abad, Carlos; Florek, Stefan; Becker-Ross, Helmut; Huang, Mao-Dong; Heinrich, Hans-Joachim; Recknagel, Sebastian; Vogl, Jochen; Jakubowski, Norbert; Panne, Ulrich

    2017-10-01

    Boron isotope amount ratios n(10B)/n(11B) have been determined by monitoring the absorption spectrum of boron monohydride (BH) in a graphite furnace using high-resolution continuum source molecular absorption spectrometry (HR-CS-MAS). Bands (0 → 0) and (1 → 1) for the electronic transition X1Σ+ → A1Π were evaluated around wavelengths 433.1 nm and 437.1 nm respectively. Clean and free of memory effect molecular spectra of BH were recorded. In order to eliminate the memory effect of boron, a combination of 2% (v/v) hydrogen gas in argon and 1% trifluoromethane in argon, an acid solution of calcium chloride and mannitol as chemical modifiers was used. Partial least square regression (PLS) for analysis of samples and reference materials were applied. For this, a spectral library with different isotopes ratios for PLS regression was built. Results obtained around the 433.1 nm and 437.1 nm spectral regions are metrologically compatible with those reported by mass spectrometric methods. Moreover, for the evaluated region of 437 nm, an accuracy of 0.15‰ is obtained as the average deviation from the isotope reference materials. Expanded uncertainties with a coverage factor of k = 2 range between 0.15 and 0.44‰. This accuracy and precision are compatible with those obtained by mass spectrometry for boron isotope ratio measurements.

  7. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    KAUST Repository

    Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

    2014-01-01

    A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

  8. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    KAUST Repository

    Huang, Yi-Fu

    2014-06-01

    A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

  9. Boronated liposome development and evaluation

    International Nuclear Information System (INIS)

    Hawthorne, M.F.

    1995-01-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues

  10. Radiation-enhanced self- and boron diffusion in germanium

    DEFF Research Database (Denmark)

    Schneider, S.; Bracht, H.; Klug, J.N.

    2013-01-01

    We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘ C and 720 ∘ C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction...

  11. An overview of male reproductive studies of boron with an emphasis on studies of highly exposed Chinese workers

    DEFF Research Database (Denmark)

    Scialli, Anthony R; Bonde, Jens Peter; Brüske-Hohlfeld, Irene

    2010-01-01

    working in boron (B) mining or processing in Liaoning province in northeast China has been published in several Chinese and a few English language papers. This study included individual assessment of boron exposure, interview data on reproductive experience and semen analysis. Employed men living....../day. Earlier studies in human workers and populations have not identified adverse effects of boron exposure on fertility, but outcome measures in these studies were relatively insensitive, based mainly on family size and did not include an evaluation of semen end points. A recent study of nearly 1000 men...... in the same community and in a remote community were used as controls. Boron workers (n=75) had a mean daily boron intake of 31.3mg B/day, and a subset of 16 of these men, employed at a plant where there was heavy boron contamination of the water supply, had an estimated mean daily boron intake of 125 mg B...

  12. Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Krishna [Univ. of South Carolina, Columbia, SC (United States)

    2017-09-29

    High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3He will be very desirable. To address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron (10B) and enriched lithium (6Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (tg ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10-24 cm2), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.

  13. Experimental study of pyrolytic boron nitride at high temperature with and without proton and VUV irradiations

    International Nuclear Information System (INIS)

    Balat-Pichelin, M.; Eck, J.; Heurtault, S.; Glénat, H.

    2014-01-01

    Highlights: • New results for the high temperature study of pBN in high vacuum for the heat shield of solar probes. • Physico-chemical behavior of pBN studied up to 1700 K with proton and VUV irradiations. • Rather low effect of synergistic aggressions on the microstructure of pBN material. • The α/ε ratio of pBN coating on C/C measured up to 2200 K is 20% lower than for the C/C itself. - Abstract: In the frame of future exploration missions such as Solar Probe Plus (NASA) and PHOIBOS (ESA), research was carried out to study pyrolytic BN material envisaged as coating for their heat shields. The physico-chemical behavior of CVD pBN at very high temperature with or without hydrogen ions and VUV (Vacuum Ultra-Violet) irradiations was studied in high vacuum together with the in situ measurement of the thermal radiative properties conditioning the thermal equilibrium of the heat shield. Experimental results obtained on massive pBN samples are presented through in situ mass spectrometry and mass loss rate, and post-test microstructural characterization by XRD, SEM, AFM and nano-indentation techniques, some of them leading to mechanical properties. It could be concluded that synergistic effect of high temperature, protons and VUV radiation has an impact on the emission of gaseous species, the mass loss rate and the mechanical properties of the material

  14. A template-free solvent-mediated synthesis of high surface area boron nitride nanosheets for aerobic oxidative desulfurization.

    Science.gov (United States)

    Wu, Peiwen; Zhu, Wenshuai; Chao, Yanhong; Zhang, Jinshui; Zhang, Pengfei; Zhu, Huiyuan; Li, Changfeng; Chen, Zhigang; Li, Huaming; Dai, Sheng

    2016-01-04

    Hexagonal boron nitride nanosheets (h-BNNs) with rather high specific surface area (SSA) are important two-dimensional layer-structured materials. Here, a solvent-mediated synthesis of h-BNNs revealed a template-free lattice plane control strategy that induced high SSA nanoporous structured h-BNNs with outstanding aerobic oxidative desulfurization performance.

  15. Study and optimization of the carbothermic reduction process for obtaining boron carbide

    International Nuclear Information System (INIS)

    Castro, A.R.M. de.

    1989-01-01

    Boron carbide - B sub(4)C - is a ceramic material of technological importance due to its hardness and high chemical and thermal stabilities. Moreover, its high neutron capture cross section makes it suitable for application as neutron absorber in nuclear technology. The process for obtaining carbothermally derived boron carbide has been studied in two steps: firstly, the parameters of the boric acid → boron oxide dehydration reaction have been defined; secondly, the optimization of the carbothermal reduction reaction using boron oxide has been undertaken looking for boron carbide having low level of free carbon. The starting materials as well as the main products have been studied by chemical and spectrographic analyses, X-ray diffractometry, granulometric classification and scanning electron microscopy. The optimization of the carbothermic reduction process allowed for the development and set up of a fabrication procedure yielding high quality B sub(4) C powders, starting from low cost and easily available (in the Brazilian market) raw materials. (author)

  16. Quantitative analysis of boron by neutron radiography

    International Nuclear Information System (INIS)

    Bayuelken, A.; Boeck, H.; Schachner, H.; Buchberger, T.

    1990-01-01

    The quantitative determination of boron in ores is a long process with chemical analysis techniques. As nuclear techniques like X-ray fluorescence and activation analysis are not applicable for boron, only the neutron radiography technique, using the high neutron absorption cross section of this element, can be applied for quantitative determinations. This paper describes preliminary tests and calibration experiments carried out at a 250 kW TRIGA reactor. (orig.) [de

  17. Effect of boron dimers on the superconducting critical temperature inboron-doped diamond

    Czech Academy of Sciences Publication Activity Database

    Šopík, Břetislav; Lipavský, P.

    2012-01-01

    Roč. 21, č. 1 (2012), 77-82 ISSN 0925-9635 R&D Projects: GA ČR GAP204/10/0212 Institutional research plan: CEZ:AV0Z10100521 Keywords : boron * superconductivity * disorder * correlations * dimers Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.709, year: 2012

  18. Nanodefects in ultrahard crystalline cubic boron nitride

    International Nuclear Information System (INIS)

    Nistor, S. V.; Stefan, M.; Goovaerts, E.; Schoemaker, D.

    2002-01-01

    Cubic boron nitride (cBN), the second hardest known material after diamond, exhibits high thermal conductivity and an excellent ability to be n or p doped, which makes it a strong candidate for the next generation of high-temperature micro optical and micro electronic devices. According to recent studies, cBN exhibits a better resistance to radiation damage than diamond, which suggests potential applications in extreme radiation environments. Crystalline cBN powders of up to 0.5 mm linear size is obtained in a similar way as diamond, by catalytic conversion of hexagonal BN (hBN) to cBN at even higher pressures (> 5GPa) and temperatures (∼ 1900 K). Considering the essential role played by the nanodefects (point defects and impurities) in determining its physical properties, it is surprising how limited is the amount of published data concerning the properties of nanodefects in this material, especially by Electron Paramagnetic Resonance (EPR) spectroscopy, the most powerful method for identification and characterization of nanodefects in both insulators and semiconductors. This seems to be due mainly to the absence of natural cBN gems and the extreme difficulties in producing even mm 3 sized synthetic crystals. We shall present our recent EPR studies on cBN crystalline powders, performed in a broad temperature range from room temperature (RT) down to 1.2 K on several sorts of large size cBN powder grits of yellow and amber color for industrial applications. Previous multifrequency (9.3 GHz and 95 GHz) EPR studies of brown to black cBN crystallites prepared with excess of boron, resulted in the discovery of two new types of paramagnetic point defects with different spectral properties, called the D1 and D2 centers. Our X(9.3 GHz)-band EPR investigations resulted in the observation in amber cBN crystalline powders of a spectrum with a strong temperature dependence of the lineshape. It was found that for high and low temperatures, respectively, the numerical

  19. A Study on the Effect of the Boron Potential on the Mechanical Properties of the Borided Layers Obtained by Boron Diffusion at the Surface of AISI 316L Steel

    Directory of Open Access Journals (Sweden)

    E. Hernández-Sánchez

    2014-01-01

    Full Text Available The effect of the boron potential on the thickness and the mechanical properties of borided layers was evaluated. The boron potential was established by means of the available atoms of boron contained in a control volume inside a cylinder. The cylinders were manufactured from AISI 316L steel, and the boriding treatment was performed using the powder pack technique at a temperature of 1273 K over an exposure time of 6 h. Four different internal diameters of the cylinders were evaluated (3.17, 4.76, 6.35, and 7.93 mm. The mechanical properties were evaluated using the Berkovich instrumented indentation technique. The results showed a clear influence of the boron potential on the mechanical properties of the layers. The hardness of the layers was stablished in the range of 16.22 to 21.16 GPa. Young’s modulus values were stablished in the range of 255.96 to 341.37 GPa. Also the fracture toughness and brittleness of the layers reflected the influence of the boron potential supplied during the boriding process. Finally, the influence of the boron potential on the constant of parabolic growth (K was also established as a function of the inner diameter of the cylinders.

  20. High temperature tribological properties of plasma-sprayed metallic coatings containing ceramic particles

    International Nuclear Information System (INIS)

    Dallaire, S.; Legoux, J.G.

    1995-01-01

    For sealing a moving metal component with a dense silica-based ceramic pre-heated at 800 C, coatings with a low coefficient of friction and moderate wear loss are required. As reported previously, plasma-sprayed coatings containing solid lubricants could reduce sliding wear in high-temperature applications. Plasma-sprayed metal-based coatings containing ceramic particles have been considered for high temperature sealing. Selected metal powders (NiCoCrAlY, CuNi, CuNiIn, Ag, Cu) and ceramic particles (boron nitride, Zeta-B ceramic) were agglomerated to form suitable spray powders. Plasma-sprayed composite coatings and reference materials were tested in a modified pin-on-disc apparatus in which the stationary disc consisted of a dense silica-based ceramic piece initially heated at 800 C and allowed to cool down during tests. The influence of single exposure and repeated contacts with a dense silica-based ceramic material pre-heated to 800 C on the coefficient of friction, wear loss and damage to the ceramic piece was evaluated. Being submitted to a single exposure at high temperature, coatings containing malleable metals such as indium, silver and copper performed well. The outstanding tribological characteristics of the copper-Zeta-B ceramic coating was attributed to the formation of a glazed layer on the surface of this coating which lasted over exposures to high temperature. This glazed layer, composed of fine oxidation products, provided a smooth and polished surface and helped maintaining the coefficient of friction low

  1. Evolution of mechanical properties of boron/manganese 22MnB5 steel under magnetic pulse influences

    International Nuclear Information System (INIS)

    Falaleev, A P; Meshkov, V V; Vetrogon, A A; Shymchenko, A V

    2016-01-01

    The boron/manganese 22MnB5 steel can be noted as the widely used material for creation of details, which must withstand high amount of load and impact influences. The complexity and high labor input of restoration of boron steel parts leads to growing interest in the new forming technologies such as magnetic pulse forming. There is the investigation of the evolution of mechanical properties of 22MnB5 steel during the restoration by means of magnetic pulse influence and induction heating. The heating of 22MnB5 blanks to the temperature above 900 0 C was examined. The forming processes at various temperatures (800, 900 and 950 0 C) were performed during the experiments. The test measurements allowed to obtain the relationships between the strain and the operation parameters such as induced current, pulse discharge time and the operation temperature. Based on these results the assumption about usage of these parameters for control of deformation process was made. Taking into account the load distribution and the plasticity evolution during the heating process, the computer simulation was performed in order to obtain more clear strain distribution through the processed area. The measurement of hardness and the comparison with the properties evolution during hot stamping processes confirmed the obtained results. (paper)

  2. Biodistribution, toxicity and efficacy of a boronated porphyrin for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Miura, Michiko; Micca, P.; Fairchild, R.; Slatkin, D.; Gabel, D.

    1992-01-01

    Boron-containing porphyrins may be useful for boron neutron capture therapy (BNCT) in the treatment of brain tumors. Porphyrins have been shown to accumulate in tumor tissue and to be essentially excluded from normal brain. However, problems of toxicity may prevent some boron-containing porphyrins from being considered for BNCT. The authors have synthesized the boronated porphyrin 2,4-bis-vinyl-o-nidocarboranyl-deuteroporphyrin IX (VCDP). Preliminary studies in tumor-bearing mice showed considerable uptake of boron at a total dose of 150 μg/gbw with low mortality. They now report that a total dose to mice of ∼ 275 μg VCDP/gbw administered in multiple intraperitoneal (ip) injections can provide 40-50μg B per gram of tumor with acceptable toxicity. Toxicity experiments and a preliminary trial of BNCT in mice given such doses are also reported

  3. Hot rolling of chromium - nickel - manganese stainless steel containing nitrogen and boron

    International Nuclear Information System (INIS)

    Khorosh, V.A.; Bulat, S.I.; Mukhina, M.A.; Sorokina, N.A.; Yushchenko, K.A.; Tsentral'nyj Nauchno-Issledovatel'skij Inst. Chernoj Metallurgii, Moscow; AN Ukrainskoj SSR, Kiev. Inst. Ehlektrosvarki)

    1976-01-01

    The strength of stainless steel of the 03Kh2ON16AG6 type increases perceptibly with an increase in the nitrogen content from 0.11 to 0.37%. At the same time, however, its ductility in the region of hot deformation temperatures (red brittleness range of 800 to 1,000 deg C) decreases. Microalloying with boron (0.002 to 0.005% by calculation) permits enhancing the hot ductility to an acceptable level without adversely affecting the working properties. The mechaniusm of boron effect is analyzed. The temperature at which ingots are heated prior to rolling to achieve the desired effect must be sufficiently low. Optimum condition for two stage heating of 6.2-ton ingots are recommeded

  4. A New Boron Analysis Method

    Energy Technology Data Exchange (ETDEWEB)

    Weitman, J; Daaverhoeg, N; Farvolden, S

    1970-07-01

    In connection with fast neutron (n, {alpha}) cross section measurements a novel boron analysis method has been developed. The boron concentration is inferred from the mass spectrometrically determined number of helium atoms produced in the thermal and epithermal B-10 (n, {alpha}) reaction. The relation between helium amount and boron concentration is given, including corrections for self shielding effects and background levels. Direct and diffusion losses of helium are calculated and losses due to gettering, adsorption and HF-ionization in the release stage are discussed. A series of boron determinations is described and the results are compared with those obtained by other methods, showing excellent agreement. The lower limit of boron concentration which can be measured varies with type of sample. In e.g. steel, concentrations below 10-5 % boron in samples of 0.1-1 gram may be determined.

  5. Spectrophotometric determination of boron by solvent extraction with 2-hydroxy-2-methylbutyric acid and malachite green

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Shigeya; Uchikawa, Sumio [Kumamoto Univ. (Japan). Faculty of Education

    1984-03-01

    A very simple and sensitive method for the spectrophotometric determination of boron was developed. Boron was found to react with 2-hydroxy-2-methylbutyric acid in weak acidic aqueous solution at room temperature to form a complex anion which can be extracted into chlorobenzene with malachite green in a single extraction; boron is determined indirectly by measuring the absorbance of malachite green in the extract at 629 nm. The calibration graph is linear over the range (7.50 x 10/sup -7/ - 2.00 x 10/sup -5/) mol dm/sup -3/ boron; the apparent molar absorptivity is 6.50 x 10/sup 4/ dm/sup 3/ mol/sup -1/ cm/sup -1/. The method is applied to the determination of micro amounts of boron in natural waters with satisfactory results.

  6. Effect of Boron and Titanium Addition on the Hot Ductility of Low-Carbon Nb-Containing Steel

    Science.gov (United States)

    Liu, Wei-Jian; Li, Jing; Shi, Cheng-Bin; Huo, Xiang-Dong

    2015-12-01

    The effect of boron and titanium addition on the hot ductility of Nb-containing steel was investigated using hot tensile tests. The fracture surface and the quenched longitudinal microstructure were examined by optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results showed that both steel samples had the similar change from 1,100°C to 700°C. The hot ductility of Nb-containing steel with boron and titanium addition was higher than the steel without boron and titanium in the temperature range of 900-750°C. Because the formation of intergranular ferrite was inhibited by solute boron segregating on the grain boundary, the formation of TiN changed the distribution of Nb- and boron-containing precipitates and improved the amount of intragranular ferrite.

  7. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    Science.gov (United States)

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  8. Microscopic origin of the composition-dependent change of the thermal conductivity in boron carbides

    International Nuclear Information System (INIS)

    Emin, D.; Howard, I.A.; Green, T.A.; Beckel, C.L.

    1987-01-01

    Large grain polycrystalline boron carbides have a high-temperature thermal conductivity which changes from being characteristic of a crystal to being glass-like as the carbon content is reduced from its maximal value. We relate this phenomenon, to compositional changes within the three-atom intericosahedral chains. With a reduction of the carbon concentration from its maximal concentration (20%), a carbon atom within some of the three-atoms (CBC) intericosahedral chains is replaced by a boron atom, thereby producing CBB chains. We estimate that the CBB chains are significantly softer than the CBC chains. Thus, with this reduction of carbon content the intericosahedral chains are inhomogeneously softened. This suppresses the coherent transport of heat through the chains. The remaining thermal transport occurs incoherently through vibrationally inequivalent structural units, i.e. ''phonon hopping.''

  9. Lattice vibrations in α-boron

    International Nuclear Information System (INIS)

    Richter, W.

    1976-01-01

    α-rhombohedral boron is the simplest boron modification, with only 12 atoms per unit cell. The boron atoms are arranged in B 12 icosahedra, which are centered at the lattice points of a primitive rhombohedral lattice. The icosahedra are slightly deformed, as the five-fold symmetry of the ideal icosahedron is incompatible with any crystal structure. The lattice dynamics of α-boron are discussed in terms of the model developed by Weber and Thorpe. (Auth.)

  10. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  11. High-purity production of ultrathin boron nitride nanosheets via shock chilling and their enhanced mechanical performance and transparency in nanocomposite hydrogels

    Science.gov (United States)

    Sun, Zemin; Lin, Liu; Yuan, Mengwei; Li, Huifeng; Sun, Genban; Ma, Shulan; Yang, Xiaojing

    2018-05-01

    A simple, highly efficient, and eco-friendly method is prepared to divide bulk boron nitride (BN) into boron nitride nanosheets (BNNSs). Due to the anisotropy of the hexagonal BN expansion coefficient, bulk BN is exfoliated utilizing the rapid and tremendous change in temperature, the extreme gasification of water, and ice thermal expansion pressure under freeze drying. The thickness of most of the BNNSs was less than ∼3 nm with a yield of 12–16 wt%. The as-obtained BNNS/polyacrylamide (PAAm) composite hydrogels exhibited outstanding mechanical properties. The tensile strength is fives times the bulk of the BN/PAAm composite hydrogels and the elongations are more than nine-fold the bulk of the BN/PAAm composite hydrogels. The BNNS/PAAm nanocomposite hydrogels also exhibited excellent elastic recovery, and the hysteresis of the BNNS nanocomposite hydrogels was negligible even after 30 cycles with a maximum tensile strain (ε max) of 700%. This work provides new insight into the fabrication of BN/polymer nanocomposites utilizing the excellent mechanical properties and transparency of BN. The results confirm that a few layers of BNNSs can also efficiently and directly improve the mechanical properties of composite polymer due to its stronger surface free energy and better wettability.

  12. Recycling behaviour during long pulse discharges after ICRF boronization in the HT-7 tokamak

    International Nuclear Information System (INIS)

    Huang, J.; Wan, B.N.; Li, J.G.; Gong, X.Z.; Zhang, X.D.; Wu, Z.W.; Zhou, Q.

    2006-01-01

    The evolution of recycling behaviour has been investigated during long pulse discharges in the HT-7 tokamak after ICRF boronization (C 2 B 10 H 12 ) using the H/(H+D) ratio and the edge recycling coefficient R. After boronization, impurity reduction is observed, attributed to the fresh boron film, but the recycling coefficient can exceed unity due to a large amount of hydrogen absorbed in the film, leading to an uncontrollable density rise and discharge termination. When the H/(H+D) ratio was reduced to less than 25%, the electron density was easily controlled. The longest discharge, up to 240 s with central electron temperature T e (0) of about 1.0 keV and central electron density n e (0) of 0.8 x 10 19 m -3 , was achieved following boronization. After many discharges the effectiveness of boron film was weakened, and the density rise was correlated with an increase in both carbon and oxygen radiation which limited the duration of long pulse discharges

  13. One-pot synthesis of reduced graphene oxide@boron nitride nanosheet hybrids with enhanced oxidation-resistant properties

    Science.gov (United States)

    Sun, Guoxun; Bi, Jianqiang; Wang, Weili; Zhang, Jingde

    2017-12-01

    Reduced graphene oxide@boron nitride nanosheet (RGO@BNNS) hybrids were prepared for the first time using template-assisted autoclave pyrolysis technique at the temperature as low as 600 °C. The developed method can be scaled into gram-scale synthesis of the material. The BNNSs combine with RGO through van der Waals interplanar interaction without damaging the structures of RGO. Such ultrathin BNNSs on the surface of RGO can serve as high-performance oxidation-resistant coatings in oxidizing atmospheres at high temperatures. The RGO@BNNS hybrids can sustain up to 800 °C over a relatively long period of time.

  14. Enhanced electrical conductivity in graphene and boron nitride nanoribbons in large electric fields

    Science.gov (United States)

    Chegel, Raad

    2018-02-01

    Based on data of density function theory (DFT) as the input of tight binding model, the electrical conductivity (σ(T)) of graphene nanoribbos (GNRs) and Boron Nitride nanoribbos (BNNRs) under external electric fields with different wide are studied using the Green's function method. The BNNRs are wide band gap semiconductor and they are turned into metal depending on their electric field strength. The σ(T) shows increasing in low temperature region and after reaching the maximum value, it will decrease in high temperature region. In lower temperature ranges, the electrical conductivity of the GNRs is greater than that of the BNNRs. In a low temperature region, the σ(T) of GNRs increases linearly with temperature unlike the BNNRs. The electrical conductivity are strongly dependent on the electric field strength.

  15. The investigation of parameters affecting boron removal by electrocoagulation method

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey); Kocakerim, M. Muhtar [Department of Chemical Engineering, 25240, Atatuerk University, Faculty of Engineering Erzurum (Turkey); Keskinler, Buelent [Department of Environmental Engineering, Gebze Institute of Technology, Gebze/Kocaeli 41400 (Turkey)

    2005-10-17

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm{sup 2}. The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl{sub 2}. Added CaCl{sub 2} increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions.

  16. High-rate and ultralong cycle-life LiFePO_4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    International Nuclear Information System (INIS)

    Feng, Jinpeng; Wang, Youlan

    2016-01-01

    Highlights: • B-doped carbon decorated LiFePO_4 has been fabricated for the first time. • The LiFePO_4@B-CdisplaysimprovedbatteryperformancecomparedtoLiFePO_4@C. • The LiFePO_4@B-C is good candidate for high-performance lithium-ion batteries. - Abstract: An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO_4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO_4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO_4@B_0_._4-C can reach 164.1 mAh g"−"1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g"−"1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g"−"1 and can be maintained at 124.5 mAh g"−"1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO_4@B-C composite for high-performance lithium-ion batteries.

  17. Spectrophotometric determination of boric acid in boron powder with curcumin

    International Nuclear Information System (INIS)

    Grotheer, E.W.

    1979-01-01

    A rapid and accurate method was needed to determine trace amounts of boric acid for quality control and specification testing of elemental boron. The reaction between boric acid and curcumin occurs at a measurable rate only when the curcumin molecule is protonated. Protonation takes place at the carbonyl groups in the presence of a strong acid and occurs completely and rapidly when sulfuric acid is added to a solution of curcumin in acetic acid. Spectrophotometric measurements were made. The extraction of boric acid from boron powder was found to be complete within 2h when either water or the diol solution was used. Whatman No. 40 cr 42 filter paper was used to obtain diol samples free of boron particles. The extraction efficiency of 2-ethyl-1,3-hexanediol was evaluated by adding 1 ml of 500 ppM aqueous boric acid and 1 drop of 10% NaOH to accurately weighed samples of boron powder. The water then was evaporated at room temperature and the samples were extracted with diol solution. The data obtained are included. The extraction efficiency also was evaluated by determining the boric acid content of boron which had been recovered from a previous extraction and boric acid determination. The determination of boric acid using curcumin is unaffected by the presence of other compounds, except for fluoride and nitrate ions. 2 tables

  18. Investigation of the adsorption properties of borazine and characterisation of boron nitride on Rh(1 1 1) by electron spectroscopic methods

    Energy Technology Data Exchange (ETDEWEB)

    Farkas, A.P., E-mail: arnold.farkas@chem.u-szeged.hu [Department of Physical Chemistry and Materials Science, University of Szeged, Szeged (Hungary); Török, P. [Department of Physical Chemistry and Materials Science, University of Szeged, Szeged (Hungary); Solymosi, F. [MTA–SZTE Reaction Kinetics and Surface Chemistry Research Group, Szeged, Rerrich B. tér 1, H-6720 Szeged (Hungary); Kiss, J. [Department of Physical Chemistry and Materials Science, University of Szeged, Szeged (Hungary); MTA–SZTE Reaction Kinetics and Surface Chemistry Research Group, Szeged, Rerrich B. tér 1, H-6720 Szeged (Hungary); Kónya, Z. [Department of Applied and Environmental Chemistry, University of Szeged, Szeged (Hungary); MTA–SZTE Reaction Kinetics and Surface Chemistry Research Group, Szeged, Rerrich B. tér 1, H-6720 Szeged (Hungary)

    2015-11-01

    Graphical abstract: - Highlights: • We provided fingerprint data by Auger electron spectroscopy that makes it possible to differentiate between adsorbed borazine multilayer and h-BN overlayer. • The strong characteristic surface phonon losses in HREELS indicate the production of well defined boron nitride nanomesh on Rh(1 1 1). • Methoxy species were stable even above room temperature on BN covered Rh(1 1 1) and desorbed from the surface after recombination reactions with hydrogen. - Abstract: The adsorption and dissociation of borazine were investigated on Rh(1 1 1) single crystal surface by Auger electron spectroscopy (AES), high resolution electron energy loss spectroscopy (HREELS) and temperature programmed desorption (TPD) methods. Borazine is one of the most frequently applied precursor molecules in the preparation process of boron nitride overlayer on metal single crystal surfaces. On Rh(1 1 1) surface it adsorbs molecularly at 140 K. We did not find any preferred orientation, although there is evidence of “flat” and perpendicular molecular geometry, too. Dehydrogenation starts even below 200 K and finishes until ∼7–800 K. No other boron or nitrogen containing products were observed in TPD beyond molecular borazine. Through the hydrogen loss of molecules hexagonal boron nitride layer forms in the 600–1100 K temperature range as it was indicated by AES and the characteristic optical phonon HREEL losses of h-BN overlayer. The adsorption behaviour of the boron nitride covered surface was also studied through the adsorption of methanol at 140 K. HREELS and TPD measurements showed that methanol adsorbed molecularly and a fraction of it dissociated to form surface methoxy and gas phase hydrogen on the h-BN/Rh(1 1 1) surface.

  19. Response of the oral mucosa to porphyrin mediated boron neutron capture therapy

    International Nuclear Information System (INIS)

    Morris, G.M.

    2003-01-01

    Pre-clinical studies are now in progress to develop boron neutron capture therapy (BNCT) modalities for the treatment of head and neck carcinomas. BNCT is a bimodal therapy which involves the administration of a boron-10 enriched compound, that accumulates preferentially in tumours, prior to irradiation with low energy neutrons. These neutrons are captured by boron-10 atoms to produce a highly localised radiation exposure. More recently, it has been demonstrated that various boronated porphyrins can target a variety of tumours. Of the porphyrins evaluated to date, copper tetracarboranylphenyl porphyrin (CuTCPH) is a strong candidate for potential clinical evaluation. It has extremely high specificity for a variety of tumour models. Therapeutic efficacy of CuTCPH mediated BNCT has been demonstrated in pre-clinical studies using the murine EMT-6 carcinoma model. In the present investigation the response of the oral mucosa to CuTCPH mediated boron neutron capture (BNC) irradiation was assessed using a standard rat model (ventral tongue). Single exposure irradiation was carried out on the thermal neutron beam at the Brookhaven Medical Research Reactor, at 3 days after the final injection of the boronated porphyrin. The impact of CuTCPH mediated BNC irradiation on oral mucosa at therapeutically effective exposure times, assessed using the ventral tongue model, was minimal. This was primarily due to the fact that blood boron levels (from CuTCPH) were very low at the time of irradiation. Analysis of the dose-effect data for CuTCPH gave a compound biological effectiveness (CBE) factor of 2.5. It can be concluded that, although, the CBE factor (calculated using blood boron concentrations) was relatively high, CuTCPH mediated BNC irradiation should not cause significant damage at clinically relevant radiation doses. This is because blood boron levels would be very low at the time of irradiation

  20. Kinetics of passivation of a nickel-base alloy in high temperature water

    Energy Technology Data Exchange (ETDEWEB)

    Machet, A. [Laboratoire de Physico-Chimie des Surfaces, CNRS-ENSCP (UMR 7045), Ecole Nationale Superieure de Chimie de Paris, Universite Pierre et Marie Curie, F-75231 Paris cedex 05 (France)]|[Framatome ANP, Tour AREVA, F-92084 Paris-la-Defense (France); Galtayries, A.; Zanna, S.; Marcus, P. [Laboratoire de Physico-Chimie des Surfaces, CNRS-ENSCP (UMR 7045), Ecole Nationale Superieure de Chimie de Paris, Universite Pierre et Marie Curie, F-75231 Paris cedex 05 (France); Jolivet, P.; Scott, P. [Framatome ANP, Tour AREVA, F-92084 Paris-la-Defense (France); Foucault, M.; Combrade, P. [Framatome ANP, Centre Technique, F-71205 Le Creusot (France)

    2004-07-01

    The kinetics of passivation and the composition of the surface oxide layer, in high temperature and high pressure water, of a nickel-chromium-iron alloy (Alloy 600) have been investigated by X-ray Photoelectron Spectroscopy (XPS). The samples have been exposed for short (0.4 - 8.2 min) and longer (0 - 400 hours) time periods to high temperature (325 deg. C) and high pressure water (containing boron and lithium) under controlled hydrogen pressure. The experiments were performed in two types of autoclaves: a novel autoclave dedicated to short time periods and a classic static autoclave for the longer exposures. In the initial stage of passivation, a continuous ultra-thin layer of chromium oxide (Cr{sub 2}O{sub 3}) is rapidly formed on the surface with an external layer of chromium hydroxide. For longer times of passivation, the oxide layer is in a duplex form with an internal chromium oxide layer and an external layer of nickel hydroxide. The growth of the internal Cr{sub 2}O{sub 3} oxide layer has been fitted by three classical models (parabolic, logarithmic and inverse logarithmic laws) for the short passivation times, and the growth curves have been extrapolated to longer passivation periods. The comparison with the experimental results reveals that the kinetics of passivation of Alloy 600 in high temperature and high pressure water, for passivation times up to 400 hours, is well fitted by a logarithmic growth law. (authors)

  1. Kinetics of passivation of a nickel-base alloy in high temperature water

    International Nuclear Information System (INIS)

    Machet, A.; Galtayries, A.; Zanna, S.; Marcus, P.; Jolivet, P.; Scott, P.; Foucault, M.; Combrade, P.

    2004-01-01

    The kinetics of passivation and the composition of the surface oxide layer, in high temperature and high pressure water, of a nickel-chromium-iron alloy (Alloy 600) have been investigated by X-ray Photoelectron Spectroscopy (XPS). The samples have been exposed for short (0.4 - 8.2 min) and longer (0 - 400 hours) time periods to high temperature (325 deg. C) and high pressure water (containing boron and lithium) under controlled hydrogen pressure. The experiments were performed in two types of autoclaves: a novel autoclave dedicated to short time periods and a classic static autoclave for the longer exposures. In the initial stage of passivation, a continuous ultra-thin layer of chromium oxide (Cr 2 O 3 ) is rapidly formed on the surface with an external layer of chromium hydroxide. For longer times of passivation, the oxide layer is in a duplex form with an internal chromium oxide layer and an external layer of nickel hydroxide. The growth of the internal Cr 2 O 3 oxide layer has been fitted by three classical models (parabolic, logarithmic and inverse logarithmic laws) for the short passivation times, and the growth curves have been extrapolated to longer passivation periods. The comparison with the experimental results reveals that the kinetics of passivation of Alloy 600 in high temperature and high pressure water, for passivation times up to 400 hours, is well fitted by a logarithmic growth law. (authors)

  2. Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida.

    Science.gov (United States)

    Rámila, Consuelo D P; Contreras, Samuel A; Di Domenico, Camila; Molina-Montenegro, Marco A; Vega, Andrea; Handford, Michael; Bonilla, Carlos A; Pizarro, Gonzalo E

    2016-11-05

    Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500mg/L), and within its tissues (>5000mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. Boron supplementation in broiler diets

    Directory of Open Access Journals (Sweden)

    EJ Fassani

    2004-12-01

    Full Text Available Boron supplementation in broiler feed is not a routine practice. However, some reports suggest a positive effect of boron on performance. This study assessed the effects of boron supplementation on broiler performance. Diets were based on maize and soybean meal, using boric acid P.A. as boron source. Six supplementation levels (0, 30, 60, 90, 120 and 150 ppm were evaluated using 1,440 one-day old males housed at a density of 30 chickens in each of 48 experimental plots of 3m². A completely randomized block design was used with 8 replicates. Feed intake, weight gain and feed conversion were assessed in the periods from 1 to 7 days, 1 to 21 days and 1 to 42 days of age, and viability was evaluated for the total 42-day rearing period. No performance variable was affected by boron supplementation (p>0.05 in the period from 1 to 7 days. The regression analysis indicated an ideal level of 37.4 ppm of boron for weight gain from 1 to 21 days (p0.05, although feed intake was reduced linearly with increased boron levels (p0.05. Ash and calcium percentages in the tibias of broilers and viability in the total rearing period were not affected by boron supplementation (p>0.05.

  4. Irradiation Effects in Fortiweld Steel Containing Different Boron Isotopes

    International Nuclear Information System (INIS)

    Grounes, M.

    1967-07-01

    Tensile specimens and miniature impact specimens of the low alloyed pressure vessel steel Fortiweld have been irradiated at 265 deg C in R2 to two neutron doses, 6.5 x 10 18 n/cm 2 (> 1 MeV) and 4 x 10 19 n/cm 2 (thermal) and also 9.0 x 10 18 n/cm 2 (> 1 MeV) and 6 x 10 19 n/cm 2 (thermal). Material from three laboratory melts, in which the boron consisted of 10 B, 11 B and natural boron respectively, were investigated. The results both of tensile tests and impact tests with miniature impact specimens show that the 10 B-alloyed material was changed more and the 11 B-alloyed material was changed less than the material containing natural boron. At the higher neutron dose the increase in yield strength (0.2 % offset yield strength) was 11 kg/mm in the 10 B containing material compared to 5 kg/mm in the 11 B-containing material. The decrease in total elongation was 5 and 0 percentage units respectively. The transition temperature was increased 190 deg C at the higher neutron dose in the 10 B-alloyed material, 40 deg C in the 11 B-alloyed material and 80 deg C in the material containing natural boron

  5. Study on boron-film thermal neutron converter prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao; Shen Ji

    2011-01-01

    The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

  6. Study on boron-film thermal neutron converter prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China); Shen Ji, E-mail: shenji@ustc.edu.c [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China)

    2011-02-15

    The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

  7. Understanding Boron through Size-Selected Clusters: Structure, Chemical Bonding, and Fluxionality

    Energy Technology Data Exchange (ETDEWEB)

    Sergeeva, Alina P.; Popov, Ivan A.; Piazza, Zachary A.; Li, Wei-Li; Romanescu, Constantin; Wang, Lai S.; Boldyrev, Alexander I.

    2014-04-15

    Conspectus Boron is an interesting element with unusual polymorphism. While three-dimensional (3D) structural motifs are prevalent in bulk boron, atomic boron clusters are found to have planar or quasi-planar structures, stabilized by localized two-center–two-electron (2c–2e) σ bonds on the periphery and delocalized multicenter–two-electron (nc–2e) bonds in both σ and π frameworks. Electron delocalization is a result of boron’s electron deficiency and leads to fluxional behavior, which has been observed in B13+ and B19–. A unique capability of the in-plane rotation of the inner atoms against the periphery of the cluster in a chosen direction by employing circularly polarized infrared radiation has been suggested. Such fluxional behaviors in boron clusters are interesting and have been proposed as molecular Wankel motors. The concepts of aromaticity and antiaromaticity have been extended beyond organic chemistry to planar boron clusters. The validity of these concepts in understanding the electronic structures of boron clusters is evident in the striking similarities of the π-systems of planar boron clusters to those of polycyclic aromatic hydrocarbons, such as benzene, naphthalene, coronene, anthracene, or phenanthrene. Chemical bonding models developed for boron clusters not only allowed the rationalization of the stability of boron clusters but also lead to the design of novel metal-centered boron wheels with a record-setting planar coordination number of 10. The unprecedented highly coordinated borometallic molecular wheels provide insights into the interactions between transition metals and boron and expand the frontier of boron chemistry. Another interesting feature discovered through cluster studies is boron transmutation. Even though it is well-known that B–, formed by adding one electron to boron, is isoelectronic to carbon, cluster studies have considerably expanded the possibilities of new structures and new materials using the B

  8. Fatigue crack initiation in hybrid boron/glass/aluminum fiber metal laminates

    International Nuclear Information System (INIS)

    Chang, P.-Y.; Yeh, P.-C.; Yang, J.-M.

    2008-01-01

    The fatigue crack initiation behavior of a high modulus and hybrid boron/glass/aluminum fiber/metal laminate (FML) was investigated experimentally and analytically. Two types of hybrid boron/glass/aluminum FMLs were fabricated and studied, which consisted of aluminum alloy sheets as the metal layers and a mixture of boron fibers and glass fibers as the composite layers. For the first type, the boron fiber/prepreg and the glass fiber/prepreg were used separately in the composite layers, and for the second type, the boron fibers and the glass fibers were mingled together to form a hybrid boron/glass/prepreg composite layer. These hybrid FMLs were consolidated using an autoclave curing process. The incorporation of the boron fibers improved the Young's modulus of the composite layer in FMLs, which in turn, would improve the fatigue crack initiation life of the Al sheet. The experimental results clearly showed that the fatigue crack initiation lives for both types of hybrid boron/glass/aluminum FMLs were superior to the monolithic aluminum alloy under the same loading condition. An analytical approach was proposed to calculate the fatigue crack initiation lives of hybrid boron/glass/aluminum FMLs based on the classical laminate theory and the small-crack theory. A good correlation was obtained between the predictions and the experimental results

  9. The optical properties of boron carbide near boron K-edge inside periodical multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Ksenzov, Dmitriy; Schlemper, Christoph; Pietsch, Ullrich [University of Siegen (Germany)

    2010-07-01

    Multilayer mirrors made for the use in the wavelength range near K-edge of boron (188 eV) are of great interest for X-ray fluorescence analysis of boron content in doped semiconductors, plasma diagnostics, astronomy and lithography. Moreover, multilayer mirrors composed by a metal and a low Z element like boron are used as optical elements in both the soft x-ray spectral range as well as at higher photon energies on 3rd generation synchrotron beamlines. Using an energy-resolved photon-in-photon-out method we reconstructed the optical data from energy dependence of both integrated peak intensity and FWHM of the 1st order ML Bragg peak measured at the UHV triple axis soft-x-ray reflectometer at BESSY II. The experiments clearly demonstrate that the peak shape of the ML Bragg peak is most sensitive to any kind of electronic excitation and recombination in solid. The soft-ray reflectivity can give detailed information for MLs with thickness up to several tens of nanometers. In addition, measurements close to a resonance edge probe the chemical state of the respective constituent accompanied with a high sensitivity of changes close to the sample surface.

  10. Boron steel. I Part. Preparation

    International Nuclear Information System (INIS)

    Jaraiz Franco, E.; Esteban Hernandez, J. A.

    1960-01-01

    With the advent of the first nuclear reactors arise the need for control rods and shielding duties for some types of radiations. One of the materials used for this purpose has been the high boron steel. This paper describes the melting and casting procedures employed for the production, at laboratory scale, of steels with Boron content ranging from 1 to 4 per cent, as well as the metallographic and X-Ray techniques used for the identification of the present phases. The electrolytic technique employed for the isolation of the Fe 2 B phase and its subsequent X-Ray identification has proved to be satisfactory. (Author) 11 refs

  11. Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films

    International Nuclear Information System (INIS)

    Li Liuan; Li Hongdong; Lue Xianyi; Cheng Shaoheng; Wang Qiliang; Ren Shiyuan; Liu Junwei; Zou Guangtian

    2010-01-01

    In this paper, we investigate the reaction pressure-dependent growth and properties of boron-doped freestanding diamond films, synthesized by hot filament chemical vapor deposition (HFCVD) at different boron-doping levels. With the decrease in pressure, the growth feature of the films varies from mixed [1 1 1] and [1 1 0] to dominated [1 1 1] texture. The low reaction pressure, as well as high boron-doping level, results in the increase (decrease) of carrier concentration (resistivity). The high concentration of atomic hydrogen in the ambient and preferable [1 1 1] growth, due to the low reaction pressure, is available for the enhancement of boron doping. The estimated residual stress increases with increase in the introducing boron level.

  12. Method for fabricating boron carbide articles

    International Nuclear Information System (INIS)

    Ardary, Z.; Reynolds, C.

    1980-01-01

    Described is a method for fabricating an essentially uniformly dense boron carbide article of a length-to-diameter or width ratio greater than 2 to 1 comprising the steps of providing a plurality of article segments to be joined together to form the article with each of said article segments having a length-to-diameter or width ratio less than 1.5 to 1. Each segment is fabricated by hot pressing a composition consisting of boron carbide powder at a pressure and temperature effective to provide the article segment with a density greater than about 85% of theoretical density, providing each article segment with parallel planar end surfaces, placing a plurality of said article segments in a hot-pressing die in a line with the planar surfaces of adjacent article segments being disposed in intimate contact, and hot pressing the aligned article segments at a temperature and pressure effective to provide said article with a density over the length thereof in the range of about 94 to 98 percent theoretical density and greater than the density provided in the discrete hot pressing of each of the article segments and to provide a bond between adjacent article segments with said bond being at least equivalent in hardness, strength and density to a remainder of said article

  13. Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyunpil Boo

    2012-01-01

    Full Text Available P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation. Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C. QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%, while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4% for backside emitter solar cells.

  14. Response surface modeling of boron adsorption from aqueous solution by vermiculite using different adsorption agents: Box-Behnken experimental design.

    Science.gov (United States)

    Demirçivi, Pelin; Saygılı, Gülhayat Nasün

    2017-07-01

    In this study, a different method was applied for boron removal by using vermiculite as the adsorbent. Vermiculite, which was used in the experiments, was not modified with adsorption agents before boron adsorption using a separate process. Hexadecyltrimethylammonium bromide (HDTMA) and Gallic acid (GA) were used as adsorption agents for vermiculite by maintaining the solid/liquid ratio at 12.5 g/L. HDTMA/GA concentration, contact time, pH, initial boron concentration, inert electrolyte and temperature effects on boron adsorption were analyzed. A three-factor, three-level Box-Behnken design model combined with response surface method (RSM) was employed to examine and optimize process variables for boron adsorption from aqueous solution by vermiculite using HDTMA and GA. Solution pH (2-12), temperature (25-60 °C) and initial boron concentration (50-8,000 mg/L) were chosen as independent variables and coded x 1 , x 2 and x 3 at three levels (-1, 0 and 1). Analysis of variance was used to test the significance of variables and their interactions with 95% confidence limit (α = 0.05). According to the regression coefficients, a second-order empirical equation was evaluated between the adsorption capacity (q i ) and the coded variables tested (x i ). Optimum values of the variables were also evaluated for maximum boron adsorption by vermiculite-HDTMA (HDTMA-Verm) and vermiculite-GA (GA-Verm).

  15. Boronated monoclonal antibody conjugates for neutron capture therapy

    International Nuclear Information System (INIS)

    Borg, D.C.; Elmore, J.J. Jr.; Ferrone, S.

    1986-01-01

    This paper describes the effectiveness of 10 B-labeled monoclonal antibodies against Colo-38 human melanoma in vitro. The authors obtained high boron to antibody ratios while maintaining antibody activity by using dextran intermediate carriers to link 10 B to the antibody. They developed a double cell quasi-competitive binding bioassay to minimize the effects of nonspecific binding of boronated complexes to cells. 1 fig., 2 tabs

  16. Nuclear magnetic resonance spectroscopy of boron compounds containing two-, three- and four-coordinate boron

    International Nuclear Information System (INIS)

    Wrackmeyer, B.

    1988-01-01

    The influence of boron chemistry on various areas of research in inorganic, organic and theoretical chemistry is well documented. In fact, many models presently employed to describe chemical bonding in general can be traced to attempts to understand bonding in boranes. The confirmation of many theoretical predictions in boron chemistry relies on direct and indirect structural information provided by various physical methods that - fortunately - became available almost at the same rate as that with which the interest in boron compounds was growing. Clearly, there has always been a strong link between the interest in synthesis and the application of physical methods. As in many other areas of chemistry, developments in boron chemistry have been greatly accelerated by NMR. 11 B NMR has been at the center of interest from the beginning, accompanied by routine 1 H NMR measurements, and occasional 14 N, 19 F and 31 P NMR work. In the last 12 years, we have seen an increasing number of 13 C NMR studies of boron compounds. The availability of multinuclear facilities for PFT NMR spectrometers stimulates the measurement of the NMR spectra of other nuclei, like 29 Si, 119 Sn or other metals, in order to obtain additional information. This paper is intended to serve several purposes: to update previous reviews on 11 B NMR of boron compounds, to demonstrate some applications of multinuclear NMR to boron chemistry; to attempt to incorporate new NMR parameters into the known data set; and to summarize the experimental facts required for obtaining the maximum information from NMR studies on boron compounds

  17. Catalytically-etched hexagonal boron nitride flakes and their surface activity

    International Nuclear Information System (INIS)

    Kim, Do-Hyun; Lee, Minwoo; Ye, Bora; Jang, Ho-Kyun; Kim, Gyu Tae; Lee, Dong-Jin; Kim, Eok-Soo; Kim, Hong Dae

    2017-01-01

    Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co_3O_4, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co_3O_4 and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

  18. Catalytically-etched hexagonal boron nitride flakes and their surface activity

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Do-Hyun, E-mail: nanotube@korea.ac.kr [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Minwoo; Ye, Bora [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Jang, Ho-Kyun; Kim, Gyu Tae [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Dong-Jin [New Functional Components Research Team, Korea Institute of Footware & Leather Technology, 152 Danggamseo-ro, Busanjin-gu, Busan 614-100 (Korea, Republic of); Kim, Eok-Soo [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Kim, Hong Dae, E-mail: hdkim@kitech.re.kr [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of)

    2017-04-30

    Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co{sub 3}O{sub 4}, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co{sub 3}O{sub 4} and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

  19. Production of boron carbide powder by carbothermal synthesis of ...

    Indian Academy of Sciences (India)

    TECS

    weight armour plates etc (Alizadeh et al 2004). It can also be used as a reinforcing material for ceramic matrix composites. It is an excellent neutron absorption material in nuclear industry due to its high neutron absorption co- efficient (Sinha et al 2002). Boron carbide can be prepared by reaction of elemental boron and ...

  20. Cell cycle dependence of boron uptake in various boron compounds used for neutron capture therapy

    International Nuclear Information System (INIS)

    Yoshida, F.; Matsumura, A.; Shibata, Y.; Yamamoto, T.; Nose, T.; Okumura, M.

    2000-01-01

    In neutron capture therapy, it is important that the tumor take boron in selectively. Furthermore, it is ideal when the uptake is equal in each tumor cell. Some indirect proof of differences in boron uptake among neoplastic cell cycles has been documented. However, no investigation has yet measured boron uptake directly. Using flow cytometry, in the present study cells were sorted by G0/G1 phase and G2/M phase, and the boron concentration of each fraction was measured with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The results were that BSH (sodiumborocaptate) and BPA (p-boronophenylalanine) had higher rates of boron uptake in the G2/M group than in the G0/G1 group. However, in BPA the difference was more prominent, which revealed a 2.2-3.3 times higher uptake of boron in the G2/M group than in the G0/G1 group. (author)

  1. Fabrication of Polyimide-Matrix/Carbon and Boron-Fiber Tape

    Science.gov (United States)

    Belvin, Harry L.; Cano, Roberto J.; Treasure, Monte; Shahood, Thomas W.

    2007-01-01

    process. The multilayer tape is then heated to imidize the matrix material and remove most of the remaining solvent, and is pressed to consolidate the multiple layers into a dense tape. For tests, specimens of HYCARB tapes and laminated composite panels made from HYCARB tape were prepared as follows: HYCARB tapes were fabricated as described above. Each panel was made by laying down ten layers of tape, containing, variously, one, two, or three boron-fiber plies and the remainder carbon- fiber-only plies (see figure). Each panel was made by laying down ten layers of tape. Each panel was then cured by heating to a temperature of 225 C for 15 minutes, then pressing at 200 psi (A1.4 MPa) while heating to 371 C, holding at 371 C for 1 hour, then continuing to hold pressure during cooling. Control specimens that were otherwise identical except that they did not contain boron fibers also were prepared. In room-temperature flexural tests, the HYCARB specimens performed comparably to the control specimens; in room-temperature, open-hole compression tests, the HYCARB specimens performed slightly better, by amounts that increased with boron content.

  2. Nanostructures of Boron, Carbon and Magnesium Diboride for High Temperature Superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Pfefferle, Lisa [Yale Univ., New Haven, CT (United States); Fang, Fang [Yale Univ., New Haven, CT (United States); Iyyamperumal, Eswarmoorthi [Yale Univ., New Haven, CT (United States); Keskar, Gayatri [Yale Univ., New Haven, CT (United States)

    2013-12-23

    Direct fabrication of MgxBy nanostructures is achieved by employing metal (Ni,Mg) incorporated MCM-41 in the Hybrid Physical-Chemical Vapor Deposition (HPCVD) reaction. Different reaction conditions are tested to optimize the fabrication process. TEM analysis shows the fabrication of MgxBy nanostructures starting at the reaction temperature of 600oC, with the yield of the nanostructures increasing with increasing reaction temperature. The as-synthesized MgxBy nanostructures have the diameters in the range of 3-5nm, which do not increase with the reaction temperature consistent with templated synthesis. EELS analysis of the template removed nanostructures confirms the existence of B and Mg with possible contamination of Si and O. NEXAFS and Raman spectroscopy analysis suggested a concentric layer-by-layer MgxBy nanowire/nanotube growth model for our as-synthesized nanostructures. Ni k-edge XAS indicates that the formation of MgNi alloy particles is important for the Vapor-Liquid-Solid (VLS) growth of MgxBy nanostructures with fine diameters, and the presence of Mg vapor not just Mg in the catalyst is crucial for the formation of Ni-Mg clusters. Physical templating by the MCM-41 pores was shown to confine the diameter of the nanostructures. DC magnetization measurements indicate possible superconductive behaviors in the as-synthesized samples.

  3. Refined phase diagram of boron nitride

    International Nuclear Information System (INIS)

    Solozhenko, V.; Turkevich, V.Z.

    1999-01-01

    The equilibrium phase diagram of boron nitride thermodynamically calculated by Solozhenko in 1988 has been now refined on the basis of new experimental data on BN melting and extrapolation of heat capacities of BN polymorphs into high-temperature region using the adapted pseudo-Debye model. As compared with the above diagram, the hBN left-reversible cBN equilibrium line is displaced by 60 K toward higher temperatures. The hBN-cBN-L triple point has been calculated to be at 3480 ± 10 K and 5.9 ± 0.1 GPa, while the hBN-L-V triple point is at T = 3400 ± 20 K and p = 400 ± 20 Pa, which indicates that the region of thermodynamic stability of vapor in the BN phase diagram is extremely small. It has been found that the slope of the cBN melting curve is positive whereas the slope of hBN melting curve varies from positive between ambient pressure and 3.4 GPa to negative at higher pressures

  4. Aerolization During Boron Nanoparticle Multi-Component Fuel Group Burning Studies

    Science.gov (United States)

    2014-02-03

    overall energy density of the multi-component fuel mixture. Boron nanoparticle- doped multi-component hydrocarbon fuels represent a potential high...addressed, Boron nanoparticle- doped multi-component hydrocarbon fuels represent a potential high-efficiency, tactical fuel that could increase thrust...and micron-sized aluminum particles. Combustion and Flame 158(2): 354-368. Gan, Y., Y. S. Lim, and L. Qiao. 2012. Combustion of nanofluid fuels

  5. The conflicting roles of boron on the radiation response of precipitate-forming austenitic alloys

    International Nuclear Information System (INIS)

    Okita, T.; Sekimura, N.; Garner, F.

    2007-01-01

    Full text of publication follows: Boron is often a deliberately added solute to improve the radiation resistance of austenitic structural alloys, with boron exerting its greatest influence on carbide precipitation. However, boron also a source of helium via transmutation and therefore tends to accelerate the onset of void nucleation. These conflicting contributions of boron with respect to radiation resistance are not easily separated, but are sometimes utilized to mimic fusion-relevant gas generation rates when testing in surrogate fission spectra. In an earlier study the authors demonstrated that in simple model ternary alloys that boron additions tended to homogenize swelling somewhat via increased helium generation but not to exert any significant influence on the total swelling. In these easily swelling alloys void nucleation was not significantly influenced by additional helium or by boron's chemical effect, with boron remaining primarily in solution. In the current study, Fe-15Cr-16Ni-0.25 Ti-0.05C alloys with four levels of natural boron addition (0, 100, 500, 2500 appm) were irradiated side-by-side at ∼400 deg. C in the Fast Flux Test Facility under active temperature control in the Materials Open Test Assembly. Although three sets of irradiation conditions were explored, the boron variation was the only variable operating in each data set. The bulk swelling was measured using an immersion density technique and electron microscopy was employed to determine the details of void, dislocation and precipitate microstructure. It was found that by 100 appm B the strongest and most immediate effect of boron was to reduce swelling at all irradiation conditions explored, but the boron-induced increases in overall helium content were rather small over the 0-100 appm B range. This indicates that boron's primary effect was chemical in nature, expressed via its effect on precipitation. As the boron level was progressively increased, however, there was a reversal in

  6. Investigation of hot ductility in Al-killed boron steels

    International Nuclear Information System (INIS)

    Chown, L.H.; Cornish, L.A.

    2008-01-01

    The influence of boron to nitrogen ratio, strain rate and cooling rate on hot ductility of aluminium-killed, low carbon, boron microalloyed steel was investigated. Hot tensile testing was performed on steel samples reheated in argon to 1300 deg. C, cooled at rates of 0.3, 1.2 and 3.0 deg. C s -1 to temperatures in the range 750-1050 deg. C, and then strained to failure at initial strain rates of 1 x 10 -4 or 1 x 10 -3 s -1 . It was found that the steel with a B:N ratio of 0.19 showed deep hot ductility troughs for all tested conditions; the steel with a B:N ratio of 0.47 showed a deep ductility trough for a high cooling rate of 3.0 deg. C s -1 and the steel with a near-stoichiometric B:N ratio of 0.75 showed no ductility troughs for the tested conditions. The ductility troughs extended from ∼900 deg. C (near the Ae 3 temperature) to ∼1000 or 1050 deg. C in the single-phase austenite region. The proposed mechanism of hot ductility improvement with increase in B:N ratio in these steels is that the B removes N from solution, thus reducing the strain-induced precipitation of AlN. Additionally, BN co-precipitates with sulphides, preventing precipitation of fine MnS, CuS and FeS, and forming large, complex precipitates that have no effect on hot ductility

  7. Improved tensile and buckling behavior of defected carbon nanotubes utilizing boron nitride coating – A molecular dynamic study

    Energy Technology Data Exchange (ETDEWEB)

    Badjian, H.; Setoodeh, A.R., E-mail: setoodeh@sutech.ac.ir

    2017-02-15

    Synthesizing inorganic nanostructures such as boron nitride nanotubes (BNNTs) have led to immense studies due to their many interesting functional features such as piezoelectricity, high temperature resistance to oxygen, electrical insulation, high thermal conductivity and very long lengths as physical features. In order to utilize the superior properties of pristine and defected carbon nanotubes (CNTs), a hybrid nanotube is proposed in this study by forming BNNTs surface coating on the CNTs. The benefits of such coating on the tensile and buckling behavior of single-walled CNTs (SWCNTs) are illustrated through molecular dynamics (MD) simulations of the resulted nanostructures during the deformation. The AIREBO and Tersoff-Brenner potentials are employed to model the interatomic forces between the carbon and boron nitride atoms, respectively. The effects of chiral indices, aspect ratio, presence of mono-vacancy defects and coating dimension on coated/non-coated CNTs are examined. It is demonstrated that the coated defective CNTs exhibit remarkably enhanced ultimate strength, buckling load capacity and Young's modulus. The proposed coating not only enhances the mechanical properties of the resulted nanostructure, but also conceals it from few external factors impacting the behavior of the CNT such as humidity and high temperature.

  8. Recoil implantation of boron into silicon by high energy silicon ions

    Science.gov (United States)

    Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

    2001-07-01

    A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

  9. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  10. Hexagonal boron nitride neutron detectors with high detection efficiencies

    Science.gov (United States)

    Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2018-01-01

    Neutron detectors fabricated from 10B enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h-10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.

  11. High-rate and ultralong cycle-life LiFePO{sub 4} nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Jinpeng, E-mail: goldminer@sina.com; Wang, Youlan

    2016-12-30

    Highlights: • B-doped carbon decorated LiFePO{sub 4} has been fabricated for the first time. • The LiFePO{sub 4}@B-CdisplaysimprovedbatteryperformancecomparedtoLiFePO{sub 4}@C. • The LiFePO{sub 4}@B-C is good candidate for high-performance lithium-ion batteries. - Abstract: An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO{sub 4}. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO{sub 4} is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO{sub 4}@B{sub 0.4}-C can reach 164.1 mAh g{sup −1} at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g{sup −1}). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g{sup −1} and can be maintained at 124.5 mAh g{sup −1} after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO{sub 4}@B-C composite for high-performance lithium-ion batteries.

  12. Functional characterization of Citrus macrophylla BOR1 as a boron transporter.

    Science.gov (United States)

    Cañon, Paola; Aquea, Felipe; Rodríguez-Hoces de la Guardia, Amparo; Arce-Johnson, Patricio

    2013-11-01

    Plants have evolved to develop an efficient system of boron uptake and transport using a range of efflux carriers named BOR proteins. In this work we isolated and characterized a boron transporter of citrus (Citrus macrophylla), which was named CmBOR1 for its high homology to AtBOR1. CmBOR1 has 4403 bp and 12 exons. Its coding region has 2145 bp and encodes for a protein of 714 amino acids. CmBOR1 possesses the molecular features of BORs such as an anion exchanger domain and the presence of 10 transmembrane domains. Functional analysis in yeast indicated that CmBOR1 has an efflux boron transporter activity, and transformants have increased tolerance to excess boron. CmBOR1 is expressed in leaves, stem and flowers and shows the greatest accumulation in roots. The transcript accumulation was significantly increased under boron deficiency conditions in shoots. In contrast, the accumulation of the transcript did not change in boron toxicity conditions. Finally, we observed that constitutive expression of CmBOR1 was able to increase tolerance to boron deficiency conditions in Arabidopsis thaliana, suggesting that CmBOR1 is a xylem loading boron transporter. Based on these results, it was determined that CmBOR1 encodes a boric acid/borate transporter involved in tolerance to boron deficiency in plants. © 2013 Scandinavian Plant Physiology Society.

  13. Rapid transporter regulation prevents substrate flow traffic jams in boron transport

    Science.gov (United States)

    Sotta, Naoyuki; Duncan, Susan; Tanaka, Mayuki; Sato, Takafumi

    2017-01-01

    Nutrient uptake by roots often involves substrate-dependent regulated nutrient transporters. For robust uptake, the system requires a regulatory circuit within cells and a collective, coordinated behaviour across the tissue. A paradigm for such systems is boron uptake, known for its directional transport and homeostasis, as boron is essential for plant growth but toxic at high concentrations. In Arabidopsis thaliana, boron uptake occurs via diffusion facilitators (NIPs) and exporters (BORs), each presenting distinct polarity. Intriguingly, although boron soil concentrations are homogenous and stable, both transporters manifest strikingly swift boron-dependent regulation. Through mathematical modelling, we demonstrate that slower regulation of these transporters leads to physiologically detrimental oscillatory behaviour. Cells become periodically exposed to potentially cytotoxic boron levels, and nutrient throughput to the xylem becomes hampered. We conclude that, while maintaining homeostasis, swift transporter regulation within a polarised tissue context is critical to prevent intrinsic traffic-jam like behaviour of nutrient flow. PMID:28870285

  14. Investigation of boron extraction process with aid magnesium hydroxide from mother liquor of boron production

    International Nuclear Information System (INIS)

    Balapanova, B.S.; Zhajmina, R.E.; Serazetdinov, D.Z.

    1988-01-01

    Conditions of boron - magnesium concentrate preparation from mother liquor by coprecipitation of borate - ions by magnesium hydroxide are investigated. It is shown that boron - magnesium concentrate and products of its heat treatment at 100 - 500 deg C in water are dissolved partially, and in ammonium citrate - practically completely. Suppositions are made on the composition of the product prepared, on the the structure of its crystal lattice and the processes taking place in it during heat treatment. The conclusion is made on the perspectiveness of processing of mother liquor of boron industry for boron - magnesium concentrate

  15. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  16. In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

    Energy Technology Data Exchange (ETDEWEB)

    Sartori, Andre F.; Fischer, Martin; Gsell, Stefan; Schreck, Matthias [Universitaet Augsburg, Institut fuer Physik, 86135 Augsburg (Germany)

    2012-09-15

    In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X-ray diffraction (XRD). The OE intensity of BH species scales linearly with the concentration of the boron precursor trimethylboron (TMB) in the feed gas. Addition of CO{sub 2} as an oxygen source causes a proportional reduction of the BH signal. At a ratio C:O = 1, a reduction factor of {proportional_to}50 is obtained. It is shown for two diamond samples that the boron incorporation drops nearly identical to the BH emission intensity. We conclude that the influence of oxygen on boron incorporation is a pure gas phase effect. In contrast, CN and BH emission indicate a negligible interaction between N{sub 2} and TMB added to the feed gas. At the same time, preliminary growth rate measurements show that the boron background pressure in the chamber after growth with TMB completely cancels the growth acceleration by nitrogen up to N{sub 2} concentrations of 100 ppm which points to the dominance of surface processes. Heteroepitaxial diamond films grown on Ir at 50 mbar between 720 and 900 C contain high intrinsic stress that varies from -2.2 GPa compressive at the lowest to slightly tensile at the highest deposition temperature. The observed behavior is similar to former work at 200 mbar in which effective climb of dislocations was suggested as responsible mechanism. Addition of boron rather enhances the stress formation than causing a relaxation. The B concentration in the heteroepitaxial films is deduced by SIMS, CL, and XRD and correlated with the TMB concentration in the gas phase. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Boron Stress Activates the General Amino Acid Control Mechanism and Inhibits Protein Synthesis

    Science.gov (United States)

    Uluisik, Irem; Kaya, Alaattin; Fomenko, Dmitri E.; Karakaya, Huseyin C.; Carlson, Bradley A.; Gladyshev, Vadim N.; Koc, Ahmet

    2011-01-01

    Boron is an essential micronutrient for plants, and it is beneficial for animals. However, at high concentrations boron is toxic to cells although the mechanism of this toxicity is not known. Atr1 has recently been identified as a boron efflux pump whose expression is upregulated in response to boron treatment. Here, we found that the expression of ATR1 is associated with expression of genes involved in amino acid biosynthesis. These mechanisms are strictly controlled by the transcription factor Gcn4 in response to boron treatment. Further analyses have shown that boron impaired protein synthesis by promoting phosphorylation of eIF2α in a Gcn2 kinase dependent manner. The uncharged tRNA binding domain (HisRS) of Gcn2 is necessary for the phosphorylation of eIF2α in the presence of boron. We postulate that boron exerts its toxic effect through activation of the general amino acid control system and inhibition of protein synthesis. Since the general amino acid control pathway is conserved among eukaryotes, this mechanism of boron toxicity may be of general importance. PMID:22114689

  18. Boron stress activates the general amino acid control mechanism and inhibits protein synthesis.

    Directory of Open Access Journals (Sweden)

    Irem Uluisik

    Full Text Available Boron is an essential micronutrient for plants, and it is beneficial for animals. However, at high concentrations boron is toxic to cells although the mechanism of this toxicity is not known. Atr1 has recently been identified as a boron efflux pump whose expression is upregulated in response to boron treatment. Here, we found that the expression of ATR1 is associated with expression of genes involved in amino acid biosynthesis. These mechanisms are strictly controlled by the transcription factor Gcn4 in response to boron treatment. Further analyses have shown that boron impaired protein synthesis by promoting phosphorylation of eIF2α in a Gcn2 kinase dependent manner. The uncharged tRNA binding domain (HisRS of Gcn2 is necessary for the phosphorylation of eIF2α in the presence of boron. We postulate that boron exerts its toxic effect through activation of the general amino acid control system and inhibition of protein synthesis. Since the general amino acid control pathway is conserved among eukaryotes, this mechanism of boron toxicity may be of general importance.

  19. Influence of boron on strain hardening behaviour and ductility of low carbon hot rolled steel

    International Nuclear Information System (INIS)

    Deva, Anjana; Jha, B.K.; Mishra, N.S.

    2011-01-01

    Highlights: → Unique feature of low strain hardening exponent (n) with high total elongation has been discussed in industrially produced low carbon boron containing steel. → n has been correlated with the micro structural changes occurring during deformation of steel. → This feature of low n and high % elongation has potential for higher cold reducibility. → The work is being reported for the first time on industrially produced low carbon boron containing steel. - Abstract: The beneficial effect of boron on mechanical properties of low carbon Al-killed steel has been reported in recent past. However, the effect of boron on strain hardening exponent (n) and ductility has not been fully understood. This aspect has been discussed in present work. The results of mill trials with reference to n and ductility with boron added steel are compared to those for commercial grade. The lowering of 'n' with increased total elongation in boron bearing steel has been related to the microstructural evolution as a result of boron addition.

  20. Hydrolytic Stability of Boronate Ester-Linked Covalent Organic Frameworks

    KAUST Repository

    Li, Huifang

    2018-01-30

    The stability of covalent organic frameworks (COFs) is essential to their applications. However, the common boronate ester-linked COFs are susceptible to attack by nucleophiles (such as water molecules) at the electron-deficient boron sites. To provide an understanding of the hydrolytic stability of the representative boronate ester-linked COF-5 and of the associated hydrolysis mechanisms, density functional theory (DFT) calculations were performed to characterize the hydrolysis reactions of the molecule formed by the condensation of 1,4-phenylenebis(boronic acid) (PBBA) and 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) monomers; two cases were considered, one dealing with the freestanding molecule and the other with the molecule interacting with COF layers. It was found that the boronate ester (B–O) bond dissociation, which requires one H2O molecule, has a relatively high energy barrier of 22.3 kcal mol−1. However, the presence of an additional H2O molecule significantly accelerates hydrolysis by reducing the energy barrier by a factor of 3. Importantly, the hydrolysis of boronate ester bonds situated in a COF environment follows reaction pathways that are different and have increased energy barriers. These results point to an enhanced hydrolytic stability of COF-5 crystals.